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Sample records for active layers grown

  1. Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond.

    PubMed

    Kaliginedi, Veerabhadrarao; Ozawa, Hiroaki; Kuzume, Akiyoshi; Maharajan, Sivarajakumar; Pobelov, Ilya V; Kwon, Nam Hee; Mohos, Miklos; Broekmann, Peter; Fromm, Katharina M; Haga, Masa-aki; Wandlowski, Thomas

    2015-11-14

    Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge-discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g(-1) at a current density of 10 μA cm(-2) and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications

  2. Self-grown Ni(OH)(2) layer on bimodal nanoporous AuNi alloys for enhanced electrocatalytic activity and stability.

    PubMed

    Han, Gao-Feng; Xiao, Bei-Bei; Lang, Xing-You; Wen, Zi; Zhu, Yong-Fu; Zhao, Ming; Li, Jian-Chen; Jiang, Qing

    2014-10-01

    Au nanostructures as catalysts toward electrooxidation of small molecules generally suffer from ultralow surface adsorption capability and stability. Here, we report Ni(OH)2 layer decorated nanoporous (NP) AuNi alloys with a three-dimensional and bimodal porous architecture, which are facilely fabricated by a combination of chemical dealloying and in situ surface segregation, for the enhanced electrocatalytic performance in biosensors. As a result of the self-grown Ni(OH)2 on the AuNi alloys with a coherent interface, which not only enhances adsorption energy of Au and electron transfer of AuNi/Ni(OH)2 but also prohibits the surface diffusion of Au atoms, the NP composites are enlisted to exhibit significant enhancement in both electrocatalytic activity and stability toward glucose electrooxidation. The highly reliable glucose biosensing with exceptional reproducibility and selectivity as well as quick response makes it a promising candidate as electrode materials for the application in nonenzymatic glucose biosensors. PMID:25216380

  3. Low defect, high purity crystalline layers grown by selective deposition

    NASA Technical Reports Server (NTRS)

    Morrison, A. D. (Inventor); Daud, T.

    1985-01-01

    The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities.

  4. Epitaxially grown layered MFI-bulk MFI hybrid zeolitic materials.

    PubMed

    Kim, Wun-gwi; Zhang, Xueyi; Lee, Jong Suk; Tsapatsis, Michael; Nair, Sankar

    2012-11-27

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N(2) physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO(2) and good CO(2)/CH(4) selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO(2) and CH(4) gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface.

  5. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  6. thin films grown with additional NaF layers

    NASA Astrophysics Data System (ADS)

    Kim, Gee Yeong; Kim, Juran; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-10-01

    CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.

  7. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  8. Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperature

    NASA Astrophysics Data System (ADS)

    Kudrawiec, R.; Misiewicz, J.; Wachnicki, Ł.; Guziewicz, E.; Godlewski, M.

    2011-07-01

    Room-temperature contactless electroreflectance (CER) has been applied to study optical transitions in ZnO layers grown by atomic layer deposition at low temperatures on glass, silicon and GaN substrates. A broad CER resonance was clearly observed at the energy of ~3.4 eV for layers deposited at low temperatures (100-240 °C) on glass or silicon. This resonance has been attributed to excitonic/band-to-band absorption in polycrystalline ZnO. A sharp excitonic resonance at ~3.32 eV was observed for monocrystalline ZnO layers deposited on GaN templates at higher temperatures (>250 °C). In addition, the broad CER resonance at ~3.4 eV was also observed for these layers but its intensity decreases when the growth temperature is increased, i.e. c-plane-oriented monocrystalline areas appear in the ZnO layer instead of polycrystalline areas with various surface orientations.

  9. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Laifi, J.; Chaaben, N.; Bouazizi, H.; Fourati, N.; Zerrouki, C.; El Gmili, Y.; Bchetnia, A.; Salvestrini, J. P.; El Jani, B.

    2016-06-01

    We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN) grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were grown by metal organic vapor phase epitaxy (MOVPE) in a temperature range of 500-600 °C on oriented (001), (113), (112) and (111) GaAs substrates. The growth was in-situ monitored by laser reflectometry (LR). Using an optical model, including time-dependent surface roughness and growth rate profiles, simulations were performed to best approach the experimental reflectivity curves. Results are discussed and correlated with ex-situ analyses, such as atomic force microscopy (AFM) and UV-visible reflectance (SR). We show that the GaN nucleation layers growth results the formation of GaN islands whose density and size vary greatly with both growth temperature and substrate orientation. Arrhenius plots of the growth rate for each substrate give values of activation energy varying from 0.20 eV for the (001) orientation to 0.35 eV for the (113) orientation. Using cathodoluminescence (CL), we also show that high temperature (800-900 °C) GaN layers grown on top of the low temperature (550 °C) GaN nucleation layers, grown themselves on the GaAs substrates with different orientations, exhibit cubic or hexagonal phase depending on both growth temperature and substrate orientation.

  10. Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Belova, O. V.; Shabanov, V. N.; Kasatkin, A. P.; Kuznetsov, O. A.; Yablonskii, A. N.; Kuznetsov, M. V.; Kuznetsov, V. P. Kornaukhov, A. V.; Andreev, B. A.; Krasil'nik, Z. F.

    2008-02-15

    Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600 Degree-Sign C and annealed at 700 or 900 Degree-Sign C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum ({approx}10{sup -5} Pa). The energy levels of Er-related donor centers are located 0.21-0.27 eV below the bottom of the conduction band of Si. In the range 80-300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3-10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases.

  11. Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Belova, O. V.; Shabanov, V. N.; Kasatkin, A. P.; Kuznetsov, O. A.; Yablonskii, A. N.; Kuznetsov, M. V.; Kuznetsov, V. P. Kornaukhov, A. V.; Andreev, B. A.; Krasil'nik, Z. F.

    2008-02-15

    Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600 deg. C and annealed at 700 or 900 deg. C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum ({approx}10{sup -5} Pa). The energy levels of Er-related donor centers are located 0.21-0.27 eV below the bottom of the conduction band of Si. In the range 80-300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3-10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases.

  12. Characterization of few-layered graphene grown by carbon implantation

    SciTech Connect

    Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N.

    2014-02-21

    Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

  13. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  14. Surface defect states in MBE-grown CdTe layers

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  15. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  16. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    NASA Astrophysics Data System (ADS)

    Choudhary, B. S.; Singh, A.; Tanwar, S.; Tyagi, P. K.; Kumar, M. Senthil; Kushvaha, S. S.

    2016-04-01

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  17. Active protein and calcium hydroxyapatite bilayers grown by laser techniques for therapeutic applications.

    PubMed

    Motoc, M M; Axente, E; Popescu, C; Sima, L E; Petrescu, S M; Mihailescu, I N; Gyorgy, E

    2013-09-01

    Active protein and bioceramic calcium hydroxyapatite (HA) bilayers were grown by combining conventional pulsed laser deposition (PLD) and matrix-assisted pulsed laser evaporation (MAPLE) techniques. A pulsed UV KrF* excimer laser was used for the irradiations. The HA layers were grown by PLD. Proteins with antimicrobial action were attached to the bioceramic layers using MAPLE. The composite MAPLE targets were obtained by dissolving the proteins powder in distilled water. The crystalline status and chemical composition of the obtained structures were studied by X-ray diffractometry and Fourier transform infrared spectroscopy. The layers were grown for the design of advanced future metal implants coatings, ensuring both enhanced bone formation and localized antimicrobial therapy. Our results demonstrated that protein coatings improve bone cell proliferation in vitro. Immunofluorescence experiments show that actin filaments stretch throughout bone cells and sustain their optimal spreading.

  18. Study of GaP single crystal layers grown on GaN by MOCVD

    SciTech Connect

    Li, Shuti; Liu, Chao; Ye, Guoguang; Xiao, Guowei; Zhou, Yugang; Su, Jun; Fan, Guanghan; Zhang, Yong; Liang, Fubo; Zheng, Shuwen

    2011-11-15

    Highlights: {yields} We investigated the growth of GaP layers on GaN by MOCVD. {yields} A single crystal GaP layer could be grown on GaN. {yields} The V/III ratio played an important role to improve GaP layer quality. {yields} The GaP:Mg layer with hole concentration of 4.2 x 10{sup 18} cm{sup -3} was obtained. -- Abstract: The performance of GaN based devices could possibly be improved by utilizing the good p-type properties of GaP layer and it provides the possibility of the integration of InAlGaN and AlGaInP materials to produce new devices, if high quality GaP compounds can be grown on III-nitride compounds. In this paper, the growth of GaP layers on GaN by metalorganic chemical vapor deposition (MOCVD) has been investigated. The results show that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature GaP growth. Using a 40 nm thick GaP buffer layer, a single crystal GaP layer, whose full-width at half-maximum of the (1 1 1) plane measured by double crystal X-ray diffraction is 580'', can be grown on GaN. The V/III ratio plays an important role in the GaP layer growth and an appropriate V/III ratio can improve the quality of GaP layer. The GaP:Mg layer with hole carrier concentration of 4.2 x 10{sup 18} cm{sup -3} has been obtained.

  19. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2006-01-05

    Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

  20. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer

    PubMed Central

    Dong, K. F.; Deng, J. Y.; Peng, Y. G.; Ju, G.; Chow, G. M.; Chen, J. S.

    2016-01-01

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) <100>//ZrN (001) <100>//TiN (001) <100> among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained. PMID:27686046

  1. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

    PubMed Central

    Fang, Hui; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

    2016-01-01

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants. PMID:27791052

  2. Effects of Seed Layer on YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Zama, Hideaki; Miyakoshi, Masayuki; Yamamoto, Hiroshi; Morishita, Tadataka

    1999-11-01

    Crack-free YBa2Cu3Ox (YBCO) films were grown by liquid phaseepitaxy (LPE) on MgO(100) substrates with a YBCO seed layer. Thecrystalline property of LPE was crucially dependent on that of theseed layer. On the purely c-axis-oriented seed layer, reasonable YBCOfilms were grown with a full-width at half maximum of the (005)reflection rocking curve, Δω, of 0.07°. In the case of the seedincluding an a-axis-oriented grain, the value of Δω of LPE films waspoor in reproducibility and larger than 0.1° on average. For thea-axis-oriented seed, no YBCO films grew under the growth conditionsin this study. X-ray topographic observations revealed that thecrystalline quality of MgO substrates limited the Δω of LPE films grownon them.

  3. Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

    SciTech Connect

    Lovygin, M. V. Borgardt, N. I.; Kazakov, I. P.; Seibt, M.

    2015-03-15

    A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.

  4. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  5. Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition

    PubMed Central

    2013-01-01

    Photoconductivities of monocrystalline vanadium pentoxide (V2O5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W-1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V2O5 NWs is two orders of magnitude higher than that of the V2O5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V2O5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO2, TiO2, and WO3. PMID:24160337

  6. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  7. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1988-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  8. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1990-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 10 17 cm -3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm 2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  9. Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates

    NASA Astrophysics Data System (ADS)

    Wagner, G.; Wawra, H.; Dorsch, W.; Albrecht, M.; Krome, R.; Strunk, H. P.; Riedel, S.; Möller, H. J.; Appel, W.

    1997-04-01

    We compare structural and electrical properties of polycrystalline Si layers grown by chemical vapour deposition (CVD) and liquid-phase epitaxy (LPE) on multicrystalline, cast silicon substrates with similar grain boundary structures. Time-resolved microwave conductivity shows a higher minority carrier lifetime in LPE than in CVD layers; the calculated diffusion lengths are up to three times the layer thickness for LPE-grown layers. After etching the samples in Secco or Sirtl solution, we measured in the p-type Si epitaxial LPE and CVD layers practically at the same dislocation density as in the same areas of the substrate. Electron-beam-induced current measurements reveal a low recombination strength of grain boundaries and dislocations in the LPE-grown layers compared to those of the CVD layers. Transmission electron microscope investigations indicate that the lower recombination strength at the grain boundaries of the LPE layers is due to a lower density of grain boundary dislocations.

  10. Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

    NASA Astrophysics Data System (ADS)

    Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Joo, Won-Jae; Hwang, SungWoo; Whang, Dongmok

    2015-11-01

    Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps.

  11. Effects of the physical properties of atomic layer deposition grown seeding layers on the preparation of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ladanov, Mikhail; Algarin-Amaris, Paula; Villalba, Pedro; Emirov, Yusuf; Matthews, Garrett; Thomas, Sylvia; Ram, Manoj K.; Kumar, Ashok; Wang, Jing

    2013-11-01

    Zinc oxide (ZnO) nanowires are growing in interest as the number of devices for which they are well suited increases. Success in these applications requires defined and controlled geometric incorporation of the wires into the various platforms. Therefore, establishing the ability to tailor the growth ZnO nanowires to produce specified sizes, surface densities, and orientation will be important. In the reported work, the effects of the seeding layer on these factors were accessed. Atomic layer deposition (ALD) was used to produce thin films of ZnO under varying growth and post-processing conditions. These films were fully characterized, including their thickness, surface roughness, and crystalline orientation. Using these well-defined films as the seeding layer, ZnO nanowires were grown and subsequently characterized in terms of morphology and crystalline properties. It was shown that the resulting nanowire properties are dependent upon the nature of the seeding layer, and careful production of the seeding layer allows for some control over these properties.

  12. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-01-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.85 {micro}m/min, using hot-wire chemical vapor deposition from silane, at substrate temperatures below 750 C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 {micro}m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 {micro}m thick epitaxial silicon absorber layer was grown at 0.7 {micro}m/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  13. Evaluation of MOS structures processed on 4H SiC layers grown by PVT epitaxy

    NASA Astrophysics Data System (ADS)

    Ciechonski, R. R.; Syväjärvi, M.; Wahab, Q.; Yakimova, R.

    2005-12-01

    MOS capacitors have been fabricated on 4H-SiC epilayers grown by physical vapor transport (PVT) epitaxy. The properties were compared with those on similar structures based on chemical vapor deposition (CVD) layers. Capacitance-voltage ( C- V) and conductance measurements ( G- V) were performed in the frequency range of 1 kHz to 1 MHz and also at temperatures up to 475 K. Detailed investigations of the PVT structures indicate a stable behaviour of the interface traps from room temperature up to 475 K. The amount of positive oxide charge QO is 6.83 × 10 9 cm -2 at room temperature and decreases with temperature increase. This suggests that the processed devices are temperature stable. The density of interface states Dit obtained by Nicollian-Brews conductance method is lower in the structure based on the PVT grown sample.

  14. Structural characterization of strained silicon grown on a SiGe buffer layer

    NASA Astrophysics Data System (ADS)

    Jang, J. H.; Phen, M. S.; Gerger, A.; Jones, K. S.; Hansen, J. L.; Larsen, A. N.; Craciun, V.

    2008-03-01

    The microstructure of about 50 nm thick strained-Si/Si0.7Ge0.3/graded-SiGe/Si-substrate layers grown by MBE (molecular beam epitaxy) was characterized using high-resolution x-ray based characterization techniques. The degree of relaxation of the Si-capping layer after a thermal anneal at 800 °C for 30 min was determined using reciprocal space map (RSM) scans recorded around the (1 1 3) diffraction plane. However, since a RSM is not suitable when the strain relaxation is very small, x-ray reflectivity (XRR) and omega rocking curves (ω-RCs) were employed for the relaxation study. XRR spectra were collected and analyzed to obtain thickness, Ge concentration and surface/interfacial roughness information of the as-grown and annealed samples. ω-RCs were performed in order to investigate the crystalline quality of the samples. It was found that the annealed strained layer showed higher Lorentzian fraction in ω-RCs and misfit defect density which were caused by strain relaxation. In addition, the results showed that after the annealing process the broadening in the tail region of the ω-RCs was indicative of a change in the coherence length distribution of the crystallite size. The misfit defects and surface morphology obtained from transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations were consistent with results obtained from the x-ray based characterization techniques.

  15. Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene

    SciTech Connect

    Ohshima, Ryo; Sakai, Atsushi; Ando, Yuichiro; Shiraishi, Masashi; Shinjo, Teruya; Kawahara, Kenji; Ago, Hiroki

    2014-10-20

    Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1 × 10{sup −7}. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.

  16. Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films

    SciTech Connect

    Prokes, S. M.; Glembocki, O. J.; Cleveland, Erin; Caldwell, Josh D.; Foos, Edward; Niinistoe, Jaakko; Ritala, Mikko

    2012-01-30

    The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air gaps that are an inherent property of the mosaic-like microstructure of the PEALD-grown Ag film, suggesting that this is a metamaterial with behavior very similar to what would be expected in spoof plasmonics where gaps are fabricated in films to create plasmonic-like resonances.

  17. Structure of GaSb layers grown on (111) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Babkevich, A. Yu.; Cowley, R. A.; Mason, N. J.; Shields, P. A.; Stadelman, T.; Brown, S.; Mannix, D.; Paul, D.

    2004-09-01

    The structure of GaSb layers with thicknesses of 70Å, 160Å, and 1260Å grown on GaAs (111) substrates by metal-organic vapor phase epitaxy has been studied by high-resolution x-ray diffraction. The lattice mismatch between the layer and the substrate is large and most of the misfit strain is taken up by a regular network of dislocations localized at the interface between the GaSb and the GaAs. The spacing between the dislocations is about 49Å along the [1¯1¯2] direction. We observe that the layers have both the ABC … and ACB … face-centered-cubic (fcc) domains with a domain size of about 1500Å. The presence of approximately the same volume of both the domains in the overall layer suggests that the particular domain is chosen largely randomly and independent of the orientation of the substrate. In contrast, the results show that the structure of the GaAs substrate was a single fcc domain. The widths of the off-axis Bragg reflections along the [111] direction for the thinnest sample was within error the same as those for the (hhh ) Bragg reflections showing that each fcc domain penetrated through the entire layer.

  18. Diffusion of cations in chromia layers grown on iron-base alloys

    SciTech Connect

    Lobnig, R.E.; Hennesen, K.; Grabke, H.J. ); Schmidt, H.P.

    1992-02-01

    Diffusion of the cations Cr, Fe, Mn, and Ni in Cr{sub 2}O{sub 3} has been investigated at 1,173 K. The diffusion measurements were performed on chromia layers grown on the model alloys Fe-20Cr and Fe-20Cr-12Ni in order to consider effects of small amounts of dissolved alien cations in Cr{sub 2}O{sub 3}. The samples were diffusion annealed in H{sub 2}-H{sub 2}O at an oxygen partial pressure close to the Cr{sub 2}O{sub 3}/Cr equilibrium. For all tracers the lattice-diffusion coefficients are 3-5 orders of magnitude smaller than the grain-boundary diffusion coefficients. The lattice diffusivity of Mn is about two orders of magnitude greater than the other lattice-diffusion coefficients, especially in Cr{sub 2}O{sub 3} grown on Fe-20Cr-12Ni. The values of the diffusion coefficients for Cr, Fe, and Ni are in the same range. Diffusion of the tracers in Cr{sub 2}O{sub 3} grown on different alloys did not show significant differences with the exception of Mn.

  19. Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Terasako, T.; Iida, S.; Ichinokura, H.; Kato, A.

    2005-11-01

    Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS2 layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A1 mode (ILO/IA1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger ILO/IA1 ratio compared to those with n-type conductivity. The observed correlation between the ILO/IA1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of ILO/IA1 is due to the increase of Zn atom substituting Ga site (ZnGa) which is acting as an acceptor.

  20. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.; Puzyk, M. V.; Papchenko, B. P.

    2016-04-01

    Gallium nitride, grown by hydride vapor phase epitaxy and capped with a thin AlGaN layer, was studied by photoluminescence (PL) methods. The concentration of free electrons in GaN was found from the time-resolved PL data, and the concentrations of point defects were estimated from the steady-state PL measurements. The intensity of PL from GaN decreases moderately after capping it with Si-doped AlGaN, and it decreases dramatically after capping with Mg-doped AlGaN. At the same time, the concentration of free electrons and the concentrations of main radiative defects in GaN are not affected by the AlGaN capping. We demonstrate that PL is a powerful tool for nondestructive characterization of semiconductor layers buried under overlying device structures.

  1. Structural Defects in Laterally Overgrown GaN Layers Grown onNon-polar Substrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2007-02-14

    Transmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (11{und 2}0) GaN grown on (1{und 1}02) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

  2. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    SciTech Connect

    Szymański, Tomasz Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  3. Electrical Properties Of GaN Layers Grown By Metal Organic Vapor Phase Epitaxy (MOVPE)

    NASA Astrophysics Data System (ADS)

    Rangel-Kuoppa, Victor-Tapio; Aguilar, Cesia Guarneros; Sánchez-Reséndiz, Victor

    2011-12-01

    The electrical properties of three un-doped GaN samples grown at low pressure by Metal Organic Vapor Phase Epitaxy (MOVPE) on sapphire substrates are reported. Two different growth temperatures of 900 °C and 950 °C were used, for 90 min. Also, two trimethylgallium flow fluxes were set (5.39 μmole/minute and 8.39 μmole/minute). The temperature dependent Hall (T-Hall) technique was used, between 35 K and 373 K. The resistivity of our samples fluctuated between 3 and 24 mΩ×cm. They were temperature dependent and were explained by two thermally activated processes, with activation energies of 20 and 70 meV. For the two samples grown at 900 °C, the mobilities and the charge carrier densities were temperature independent with values of 10 and 20 cm2 V-1 s-1, and 6×1019 and 5×1019 cm-3, respectively. For the sample grown at 950 °C, the mobility showed temperature dependence to the power of +1/3 and the charge carrier density a thermally activated dependence with an activation energy of 5 meV.

  4. Capture kinetics at deep-level defects in MBE-grown CdTe layers

    NASA Astrophysics Data System (ADS)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Kret, Slawomir; Kolkovsky, Valery; Karczewski, Grzegorz

    2011-04-01

    The results of deep-level transient spectroscopy (DLTS) investigations in n-type CdTe layers grown by the molecular-beam epitaxy (MBE) technique on lattice-mismatched GaAs substrates are described. Three electron traps and one hole trap, at rather low concentrations of the order of 1013 cm-3, have been revealed in the DLTS spectra measured under various bias conditions of Schottky diodes prepared on the as-grown CdTe layers. One of the electron traps has been attributed to electron states of dislocations on the ground of the logarithmic capture kinetics for capture of electrons into the trap states. The other three traps, displaying exponential capture kinetics, have been attributed to native point defects produced during the epitaxial growth of CdTe. The microscopic nature of the defects responsible for the traps is discussed taking into account recent results of first-principles calculations of the properties of dominant native defects in CdTe.

  5. Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

    NASA Astrophysics Data System (ADS)

    Nishino, Katsushi; Nakauchi, Jun; Hayashi, Kotaro; Tsukihara, Masashi

    2013-08-01

    AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.

  6. High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Shah, V. A.; Dobbie, A.; Myronov, M.; Leadley, D. R.

    2011-08-01

    After a long period of developing integrated circuit technology through simple scaling of silicon devices, the semiconductor industry is now embracing technology boosters such as strain for higher mobility channel material. Germanium is the logical supplement to enhance existing technologies, as its material behaviour is very close to silicon, and to create new functional devices that cannot be fabricated from silicon alone (Hartmann et al. (2004) [1]). Germanium wafers are, however, both expensive and less durable than their silicon counterparts. Hence it is highly desirable to create a relaxed high quality Ge layer on a Si substrate, with the provision that this does not unduly compromise the planarity of the system. The two temperature method, proposed by Colace et al. (1997) [2], can give smooth (RMS surface roughness below 1 nm) and low threading dislocation density (TDD <10 8 cm -2) Ge layers directly on a Si(0 0 1) wafer (Halbwax et al. (2005) [3]), but these are currently of the order of 1-2 μm thick (Hartmann et al. (2009) [4]). We present an in depth study of two temperature Ge layers, grown by reduced pressure chemical vapour deposition (RP-CVD), in an effort to reduce the thickness. We report the effect of changing the thickness, of both the low temperature (LT) and the high temperature (HT) layers, emphasising the variation of TDD, surface morphology and relaxation. Within this study, the LT Ge layer is deposited directly on a Si(0 0 1) substrate at a low temperature of 400 °C. This low temperature is known to generate monolayer islands (Park et al. (2006) [5]), but is sufficiently high to maintain crystallinity whilst keeping the epitaxial surface as smooth as possible by suppressing further island growth and proceeding in a Frank-van der Merwe growth mode. This LT growth also generates a vast number of dislocations, of the order of 10 8-10 9 cm -2, that enable the next HT step to relax the maximum amount of strain possible. The effect of varying

  7. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  8. Interface characterization of nanoscale SiOx layers grown on RF plasma hydrogenated silicon

    NASA Astrophysics Data System (ADS)

    Halova, E.; Kojuharova, N.; Alexandrova, S.; Szekeres, A.

    2016-03-01

    In the present paper, results are presented on electrical characterization of the interface Si/SiOx, formed by oxidation on Si wafers previously exposed to rf hydrogen plasma. As tools of investigations, multiple frequency C-V and G-V measurements were applied. The data analysis was performed using a two-frequency method to extract a generalized frequency independent C-V characteristic. The interface trap densities were evaluated from the generalized C-V data by comparison with theoretical data for an ideal interface. A set of localized states, acting as interface traps, was found that characterize the interface of Si to substoichiometric SiOx, layer with x< 2. The dielectric constant of the oxides was calculated from the capacitance in accumulation of the generalized C-V curves. The thickness and the refractive index of the oxide layers were obtained from ellipsometric data analysis assuming the oxide-Si substrate as being a single layer system. From the data for the dielectric constant and refractive index, the suggestion is made that the oxides grown on hydrogenated Si contain voids thus reducing the dielectric constant. Correlation with oxide mechanical stress is found.

  9. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  10. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  11. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.

    PubMed

    Shih, Huan-Yu; Lin, Ming-Chih; Chen, Liang-Yih; Chen, Miin-Jang

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3. The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate.

  12. Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

    SciTech Connect

    Ruffino, F. Cacciato, G.; Grimaldi, M. G.

    2014-02-28

    A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

  13. Electrochemical double layer capacitor electrodes using aligned carbon nanotubes grown directly on metals.

    PubMed

    Shah, Rakesh; Zhang, Xianfeng; Talapatra, Saikat

    2009-09-30

    We report on the fabrication of electrochemical double layer capacitor (EDLC) electrodes with aligned carbon nanotubes (CNTs) grown directly on conductive substrates using an air assisted chemical vapor deposition technique. The fabricated EDLCs showed very small equivalent series resistances (approximately few hundreds of mOmega), a direct consequence of integrating CNTs with metal current collectors. The specific capacitance of the CNTs used for EDLC electrodes increased with decreasing CNT lengths and ranged from 10.75 F g(-1) to 21.57 F g(-1) with maximum energy and power density ranging from 2.3 to 5.4 Wh kg(-1) and 19.6 to 35.4 kW kg(-1), respectively. These results indicate that the integrated CNT electrodes fabricated using a simple single step process hold significant promise in applications related to electrochemical energy storage. PMID:19726841

  14. Structural evolution of platinum thin films grown by atomic layer deposition

    SciTech Connect

    Geyer, Scott M.; Methaapanon, Rungthiwa; Bent, Stacey; Johnson, Richard; Clemens, Bruce; Brennan, Sean; Toney, Mike F.

    2014-08-14

    The structural properties of Pt films grown by atomic layer deposition (ALD) are investigated with synchrotron based x-ray scattering and x-ray diffraction techniques. Using grazing incidence small angle scattering, we measure the lateral growth rate of the Pt islands to be 1.0 Å/cycle. High resolution x-ray diffraction reveals that the in-plane strain of the Pt lattice undergoes a transition from compressive strain to tensile strain when the individual islands coalescence into a continuous film. This transition to tensile strain is attributed to the lateral expansion that occurs when neighboring islands merge to reduce their surface energy. Using 2D grazing incidence x-ray diffraction, we show that the lattice orientation becomes more (111) oriented during deposition, with a sharp transition occurring during coalescence. Pt ALD performed at a lower deposition temperature (250 °C) is shown to result in significantly more randomly oriented grains.

  15. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

    SciTech Connect

    Acharya, Ananta R. E-mail: anantaach@gmail.com; Thoms, Brian D.; Nepal, Neeraj; Eddy, Charles R.

    2015-03-15

    The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 ± 0.06) eV and pre-exponential factor of (1.5 ± 0.5) × 10{sup 5 }s{sup −1}.

  16. High performance LiMn2O4 cathode materials grown with epitaxial layered nanostructure for Li-ion batteries.

    PubMed

    Lee, Min-Joon; Lee, Sanghan; Oh, Pilgun; Kim, Youngsik; Cho, Jaephil

    2014-02-12

    Tremendous research works have been done to develop better cathode materials for a large scale battery to be used for electric vehicles (EVs). Spinel LiMn2O4 has been considered as the most promising cathode among the many candidates due to its advantages of high thermal stability, low cost, abundance, and environmental affinity. However, it still suffers from the surface dissolution of manganese in the electrolyte at elevated temperature, especially above 60 °C, which leads to a severe capacity fading. To overcome this barrier, we here report an imaginative material design; a novel heterostructure LiMn2O4 with epitaxially grown layered (R3̅m) surface phase. No defect was observed at the interface between the host spinel and layered surface phase, which provides an efficient path for the ionic and electronic mobility. In addition, the layered surface phase protects the host spinel from being directly exposed to the highly active electrolyte at 60 °C. The unique characteristics of the heterostructure LiMn2O4 phase exhibited a discharge capacity of 123 mAh g(-1) and retained 85% of its initial capacity at the elevated temperature (60 °C) after 100 cycles.

  17. Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Zutter, Brian T.; Schulte, Kevin L.; Kim, Tae Wan; Mawst, Luke J.; Kuech, T. F.; Foran, Brendan; Sin, Yongkun

    2014-04-01

    Hydride vapor-phase epitaxy (HVPE) is a high-growth-rate, cost-effective means to grow epitaxial semiconductor material. Thick HVPE-based metamorphic buffer layers (MBLs) can serve as "pseudosubstrates" with controllable lattice parameter. In our structures, the indium content in In x Ga1- x As is gradually increased from zero to the final composition corresponding to the desired lattice constant, and then a thick (˜10 μm) constant-composition capping layer is grown. This thick capping layer promotes maximum strain relaxation while permitting use of polishing procedures to achieve surface planarity. Lattice-mismatched growth of MBLs invariably results in rough, cross-hatched surface morphology exhibiting up to 200 nm peak-to-valley roughness. This roughness can be eliminated by chemical mechanical planarization, thus creating a suitable surface for subsequent regrowth. Polishing of In x Ga1- x As is complicated by the sensitivity of the surface layer to the polishing parameters, particularly the applied pressure. Polishing at high applied pressure (12 psi) results in the formation of circular asperities hundreds of nanometers high and tens of microns in diameter. When lower applied pressure (4 psi) was used, the cross-hatching height of MBLs was lowered from 200 nm to <10 nm over a 350 μm lateral scale. The successfully planarized In0.20Ga0.80As MBLs were used as a substrate for a superlattice (SL) structure such as that used in quantum cascade lasers. Use of planarization before regrowth of the SL resulted in a reduction of the high-resolution x-ray diffraction peak full-width at half-maximum from 389″ to 159″.

  18. Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; Fathauer, R. W.; Anderson, M. S.

    1992-01-01

    The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

  19. Catalase Activity of Psychrophilic Bacteria Grown at 2 and 30 C1

    PubMed Central

    Frank, Hilmer A.; Ishibashi, Sandra T.; Reid, Ann; Ito, June S.

    1963-01-01

    Catalase activity was measured in resting-cell suspensions of psychrophilic bacteria grown at 2 and at 30 C. Enzyme activity decreased in both cell-suspension types as harvest age increased. At comparable physiological age, cells grown at 2 C had more catalase than cells grown at 30 C. PMID:13959237

  20. Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition

    PubMed Central

    2012-01-01

    We demonstrate the morphological control method of ZnO nanostructures by atomic layer deposition (ALD) on an Al2O3/ZnO seed layer surface and the application of a hierarchical ZnO nanostructure for a photodetector. Two layers of ZnO and Al2O3 prepared using ALD with different pH values in solution coexisted on the alloy film surface, leading to deactivation of the surface hydroxyl groups. This surface complex decreased the ZnO nucleation on the seed layer surface, and thereby effectively screened the inherent surface polarity of ZnO. As a result, a 2-D zinc hydroxyl compound nanosheet was produced. With increasing ALD cycles of ZnO in the seed layer, the nanostructure morphology changes from 2-D nanosheet to 1-D nanorod due to the recovery of the natural crystallinity and polarity of ZnO. The thin ALD ZnO seed layer conformally covers the complex nanosheet structure to produce a nanorod, then a 3-D, hierarchical ZnO nanostructure was synthesized using a combined hydrothermal and ALD method. During the deposition of the ALD ZnO seed layer, the zinc hydroxyl compound nanosheets underwent a self-annealing process at 150 °C, resulting in structural transformation to pure ZnO 3-D nanosheets without collapse of the intrinsic morphology. The investigation on band electronic properties of ZnO 2-D nanosheet and 3-D hierarchical structure revealed noticeable variations depending on the richness of Zn-OH in each morphology. The improved visible and ultraviolet photocurrent characteristics of a photodetector with the active region using 3-D hierarchical structure against those of 2-D nanosheet structure were achieved. PMID:22672780

  1. High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate

    NASA Astrophysics Data System (ADS)

    Amarasinghe, Priyanthi M.; Qadri, Syed B.; Wijewarnasuriya, Priyalal S.

    2015-08-01

    The structural properties of molecular beam epitaxially (MBE)-grown Hg1- x Cd x Te epilayers on CdZnTe (211) substrate have been investigated using high-resolution x-ray topography and rocking curves. High-resolution x-ray diffraction 2 θ- θ scans of (422) reflections were utilized in calculating the out-of-plane lattice parameters of the HgCdTe layer and the CdZnTe substrate. The lattice strain of the HgCdTe layer was evaluated using the in-plane measurements of the (311) reflection. Etching seemed to improve the surface of the substrate by removing any damage caused by polishing or any post-processing. In spite of some localized line dislocations, a remarkable quality of the MBE-grown HgCdTe layer was observed. The full width at half maximum values of the HgCdTe layer and the CdZnTe substrate were determined as 43 arc-s and 16.2 arc-s, respectively.

  2. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS₂ Grown by Vapor Transport.

    PubMed

    McCreary, Amber; Ghosh, Rudresh; Amani, Matin; Wang, Jin; Duerloo, Karel-Alexander N; Sharma, Ankit; Jarvis, Karalee; Reed, Evan J; Dongare, Avinash M; Banerjee, Sanjay K; Terrones, Mauricio; Namburu, Raju R; Dubey, Madan

    2016-03-22

    One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm(-1)) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under ∼1.5% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain.

  3. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS₂ Grown by Vapor Transport.

    PubMed

    McCreary, Amber; Ghosh, Rudresh; Amani, Matin; Wang, Jin; Duerloo, Karel-Alexander N; Sharma, Ankit; Jarvis, Karalee; Reed, Evan J; Dongare, Avinash M; Banerjee, Sanjay K; Terrones, Mauricio; Namburu, Raju R; Dubey, Madan

    2016-03-22

    One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm(-1)) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under ∼1.5% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain. PMID:26881920

  4. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  5. ZnO nanostructures directly grown on paper and bacterial cellulose substrates without any surface modification layer.

    PubMed

    Costa, Saionara V; Gonçalves, Agnaldo S; Zaguete, Maria A; Mazon, Talita; Nogueira, Ana F

    2013-09-21

    In this report, hierarchical ZnO nano- and microstructures were directly grown for the first time on a bacterial cellulose substrate and on two additional different papers by hydrothermal synthesis without any surface modification layer. Compactness and smoothness of the substrates are two important parameters that allow the growth of oriented structures. PMID:23912253

  6. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  7. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate

    SciTech Connect

    Shustov, D. B.; Lebedev, A. A. Lebedev, S. P.; Nelson, D. K.; Sitnikova, A. A.; Zamoryanskaya, M. V.

    2013-09-15

    n-3C-SiC/n-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 {mu}m. Varying the growth conditions changes the concentration of various types of defects.

  8. Study of the 3C-SiC layers grown on the 15R-SiC substrates

    SciTech Connect

    Lebedev, A. A. Abramov, P. L.; Bogdanova, E. V.; Zubrilov, A. S.; Lebedev, S. P.; Nelson, D. K.; Seredova, N. V.; Smirnov, A. N.; Tregubova, A. S.

    2009-06-15

    The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural quality. By the data of the Raman spectroscopy and capacitance-voltage measurements, it is established that the electron concentration in the 3C-SiC layer is (4-6) x 10{sup 18} cm{sup -3}.

  9. Defect studies in MBE grown GaSb{sub 1−x}Bi{sub x} layers

    SciTech Connect

    Segercrantz, N.; Kujala, J.; Tuomisto, F.; Slotte, J.; Song, Y.; Wang, S.

    2014-02-21

    Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb{sub 1−x}Bi{sub x} on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0–0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

  10. Josephson Junctions with Tunnel Barriers Grown Via In Situ Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Elliot, Alan J.

    Since the 1970's, silicon technology has increased processing power by increasing the density of silicon transistors according to Moore's Law. However, silicon transistor feature sizes are approaching a minimum size limit, and a new paradigm is required to continue progress. Quantum computing is a promising paradigm that relies on the entanglement of macroscopic quantum objects, called qubits, to perform calculations. Josephson junction (JJ) based qubits are a promising candidate for the implementation of quantum computers. However, JJ qubits have suffered from poor coherence. A major source of decoherence in JJ qubits is two-level fluctuators in the insulating materials of the JJ circuit, particularly oxygen vacancies and interstitials in the thermally oxidized tunnel barrier. In order to realize the full potential of JJ qubits, an alternative method to thermal oxidation must be found for tunnel barrier growth. This work explores using atomic layer deposition (ALD) for the growth of ultrathin (~ 1 nm) tunnel barriers in JJs. A unique thin film deposition tool was built which integrates ultra-high vacuum sputtering with ALD in situ. The growth of ALD-Al2O3 on in situ sputtered Al films was studied in depth. Atomic force microscopy and ellipsometry were used to determine that ALD-Al2O3 grows conformally on Al, but a ~ 2 nm thermally oxidized interfacial layer (IL) develops between the Al and Al2O3 for ALD films > 2 nm. The thickness of this IL decreased when the Al film was < 2 nm, confirming the IL is a thermal oxide. As a proof of concept, Nb/Al/ALD-Al2O3/Nb trilayers with ultrathin (< 1 nm) tunnel barriers were grown and processed into JJs. The junction specific resistance and gap current density were found to depend exponentially on the ALD film thickness, indicating that the tunnel barrier thickness can be controlled by ALD. Despite evidence for an estimated 0.8 nm interfacial layer in the ultrathin tunnel barrier, this work incontrovertibly concludes that ALD

  11. Protein content and enzyme activities in methanol- and acetate-grown Methanosarcina thermophila.

    PubMed Central

    Jablonski, P E; DiMarco, A A; Bobik, T A; Cabell, M C; Ferry, J G

    1990-01-01

    The cell extract protein content of acetate- and methanol-grown Methanosarcina thermophila TM-1 was examined by two-dimensional polyacrylamide gel electrophoresis. More than 100 mutually exclusive spots were present in acetate- and methanol-grown cells. Spots corresponding to acetate kinase, phosphotransacetylase, and the five subunits of the carbon monoxide dehydrogenase complex were identified in acetate-grown cells. Activities of formylmethanofuran dehydrogenase, formylmethanofuran:tetrahydromethanopterin formyltransferase, 5,10-methenyltetrahydromethanopterin cyclohydrolase, methylene tetrahydromethanopterin:coenzyme F420 oxidoreductase, formate dehydrogenase, and carbonic anhydrase were examined in acetate- and methanol-grown Methanosarcina thermophila. Levels of formyltransferase in either acetate- or methanol-grown Methanosarcina thermophila were approximately half the levels detected in H2-CO2-grown Methanobacterium thermoautotrophicum. All other enzyme activities were significantly lower in acetate- and methanol-grown Methanosarcina thermophila. Images FIG. 1 FIG. 2 PMID:2307649

  12. Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Keun; Hwang, Cheol Seong

    2004-08-01

    The growth, thermal annealing behaviors, and electrical properties of Al2O3 thin films grown by atomic layer deposition (ALD) on bare (100)Si and various oxidized Si wafers, by in situ O3 oxidation at 400°C and ex situ rapid thermal annealing (RTA) under O2 atmosphere at 900°C, were investigated. The ALD process was performed using Al(CH3)3 and high concentration of O3(400gm3). The high oxidation potential of O3 oxidized the Si surface at a very early stage of film growth and eliminated the incubation period even on a bare Si surface. The as-grown Al2O3 films had excess oxygen in the films, which diffused to the film Si interface and increased the interfacial layer by oxidizing the Si substrates during postannealing. The Al2O3 films grown on a bare Si substrate had the highest concentration of excess oxygen which resulted in the largest increase in the interfacial layer thickness during postannealing. As a result, the initial oxidation of the Si wafer did not significantly decrease the capacitance density compared to the films grown on a nonoxidized Si wafer at the as-deposited and postannealed states. Therefore, the Al2O3 layers grown using a high concentration of O3 oxidant on the in situ O3 oxidized Si wafers showed real high-k gate dielectric performance although the dielectric constants of the Al2O3 films were rather small (˜9) compared to other high-k gate dielectric films.

  13. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  14. Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

    SciTech Connect

    Gaubas, E. Čeponis, T.; Jasiunas, A.; Jelmakas, E.; Juršėnas, S.; Kadys, A.; Malinauskas, T.; Tekorius, A.; Vitta, P.

    2013-11-15

    The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconductivity (MW-PC) and spectrally resolved photo-luminescence (PL) transients were simultaneously recorded under ultraviolet (UV) light 354 nm pulsed 500 ps excitation. The MW-PC transients exhibited the carrier decay components associated with carrier decay within micro-crystals and the disordered structure on the periphery areas surrounding crystalline columns. Three PL bands were resolved within PL spectrum, namely, the exciton ascribed UV-PL band edge for hν>3.3 eV, blue B-PL band for 2.5 < hν < 3.0 eV and yellow Y-PL band with hν < 2.4 eV. It has been obtained that intensity of UV-PL band increases with excitation density, while intensity of B-PL band is nearly invariant. However, intensity of the Y-PL increases with reduction of the excitation density. The Y-PL can be associated with trapping centers. A reduction of UV excitation density leads to a decrease of the relative amplitude of the asymptotic component within the MW-PC transients and to an increase of the amplitude as well as duration of the yellow spectral band (Y-PL) asymptotic component. Fractional index α with values 0.5 < α < 0.8 was evaluated for the stretched-exponent component which fits the experimental transients determined by the disordered structure ascribed to the periphery areas surrounding the crystalline columns.

  15. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    NASA Astrophysics Data System (ADS)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  16. Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

    NASA Astrophysics Data System (ADS)

    Zhao, Dan-Mei; Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Zhu, Jian-Jun; Chen, Ping; Liu, Wei; Li, Xiang; Shi, Ming

    2015-10-01

    In this paper, the temperature-dependent photoluminescence (PL) properties of GaN grown on Si (111) substrate are studied. The main emission peaks of GaN films grown on Si (111) are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FXA and D0X peaks, of GaN films grown on Si (111) substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the GaN films grown on sapphire are under the action of compressive stress, while those grown on Si (111) substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in GaN films grown on Si (111) and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well (QW) emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017).

  17. Hydrothermal regimes of the dry active layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Mamoru; Zhang, Yinsheng; Kadota, Tsutomu; Ohata, Tetsuo

    2006-04-01

    Evaporation and condensation in the soil column clearly influence year-round nonconductive heat transfer dynamics in the dry active layer underlying semiarid permafrost regions. We deduced this from heat flux components quantified using state-of-the-art micrometeorological data sets obtained in dry and moist summers and in winters with various snow cover depths. Vapor moves easily through large pores, some of which connect to the atmosphere, allowing (1) considerable active layer warming driven by pipe-like snowmelt infiltration, and (2) direct vapor linkage between atmosphere and deeper soils. Because of strong adhesive forces, water in the dry active layer evaporates with great difficulty. The fraction of latent heat to total soil heat storage ranged from 26 to 45% in dry and moist summers, respectively. These values are not negligible, despite being smaller than those of arctic wet active layer, in which only freezing and thawing were considered.

  18. Characterization of 1064nm nanosecond laser-induced damage on antireflection coatings grown by atomic layer deposition.

    PubMed

    Liu, Zhichao; Chen, Songlin; Ma, Ping; Wei, Yaowei; Zheng, Yi; Pan, Feng; Liu, Hao; Tang, Gengyu

    2012-01-16

    Damage tests are carried out at 1064nm to measure the laser resistance of TiO(2)/Al(2)O(3) and HfO(2)/Al(2)O(3) antireflection coatings grown by atomic layer deposition (ALD). The damage results are determined by S-on-1 and R-on-1 tests. Interestingly, the damage performance of ALD coatings is similar to those grown by conventional e-beam evaporation process. A decline law of damage resistance under multiple irradiations is revealed. The influence of growth temperature on damage performance has been investigated. Result shows that the crystallization of TiO(2) layer at higher temperature could lead to numerous absorption defects that reduce the laser-induced damage threshold (LIDT). In addition, it has been found that using inorganic compound instead of organic compound as precursors for ALD process maybe effectively prevent carbon impurities in films and will increase the LIDT obviously.

  19. Few layers isolated graphene domains grown on copper foils by microwave surface wave plasma CVD using camphor as a precursor

    NASA Astrophysics Data System (ADS)

    Ram Aryal, Hare; Adhikari, Sudip; Uchida, Hideo; Wakita, Koichi; Umeno, Masayoshi

    2016-03-01

    Few layers isolated graphene domains were grown by microwave surface wave plasma CVD technique using camphor at low temperature. Graphene nucleation centers were suppressed on pre-annealed copper foils by supplying low dissociation energy. Scanning electron microscopy study of time dependent growth reveals that graphene nucleation centers were preciously suppressed, which indicates the possibility of controlled growth of large area single crystal graphene domains by plasma processing. Raman spectroscopy revealed that the graphene domains are few layered which consist of relatively low defects.

  20. Band lineup in GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Ji, G.; Agarwala, S.; Huang, D.; Chyi, J.; Morkoc, H.

    1988-01-01

    GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs(1-x)Sbx/GaAs system. The method for determining the band offset Q(vh) is discussed in this strained-layer system.

  1. Polarity and microstructure in InN thin layers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Kuwano, N.; Nakahara, Y.; Amano, H.

    2006-06-01

    Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed

  2. Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

    NASA Astrophysics Data System (ADS)

    Sugawara, Yoshihiro; Ishikawa, Yukari; Watanabe, Arata; Miyoshi, Makoto; Egawa, Takashi

    2016-05-01

    Dislocations in a GaN layer grown on 4-in. Si(111) with AlGaN/AlN strained layer superlattices using a horizontal metal–organic chemical vapor deposition system were characterized by transmission electron microscopy and scanning transmission electron microscopy. Pure screw dislocations were not found in the observed area but mixed and edge dislocations were found. The dislocation density in the GaN layer decreased from the bottom (∼2 × 1010 cm‑2) to the top (∼6 × 109 cm‑2). Some dislocations were inclined from the c-axis, and half-loop dislocations were observed in the GaN layer. Plan-view weak-beam dark-field analysis indicated that the dislocation inclination was caused by climb and glide motions.

  3. Quality improvements of ZnxCdyMg1-x-ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer

    NASA Astrophysics Data System (ADS)

    Zeng, L.; Yang, B. X.; Tamargo, M. C.; Snoeks, E.; Zhao, L.

    1998-03-01

    The quality of lattice-matched ZnxCdyMg1-x-ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1-x-ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106-107cm-2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer.

  4. Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO 2 switching layer

    NASA Astrophysics Data System (ADS)

    Muller, Ch.; Deleruyelle, D.; Müller, R.; Thomas, M.; Demolliens, A.; Turquat, Ch.; Spiga, S.

    2011-02-01

    The present paper deals with the bipolar resistive switching of memory elements based on metal-organic complex CuTCNQ (copper-7,7',8,8'-tetracyanoquinodimethane) nanowires grown on a dedicated HfO2 oxide switching layer. Switching characteristics are explored either at millimeter scale on pad-size devices or at nanoscale by using conductive atomic force microscopy. Whatever the investigation scales, the basic memory characteristics appear to be controlled by copper ionic transport within a switching layer. This latter corresponds to either HfO2 layer in pad-size devices or nanogap formed at nanoscale between the atomic force microscopy conductive tip and CuTCNQ surface. Depending upon the observation scale, the switching layer (either HfO2 oxide or nanogap) acts as a matrix in which copper conductive bridges are formed and dissolved thanks to redox processes controlled in alternating applied bias voltages.

  5. Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

    SciTech Connect

    Uedono, Akira Zhang, Yang; Yoshihara, Nakaaki; Fujishima, Tatsuya; Palacios, Tomás; Cao, Yu; Laboutin, Oleg; Johnson, Wayne; Ishibashi, Shoji; Sumiya, Masatomo

    2014-02-24

    Native defects in GaN layers grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture was found to occur when the layers were irradiated by photons with energy above 2.71 eV. The concentration of such defects increased after 600–800 °C annealing, but the defects have not been annealed out even at 1000 °C. They were identified as Ga-vacancy-type defects, such as complexes between Ga vacancies and carbon impurities, and the relationship between their charge transition and optical properties were discussed.

  6. Free radical scavenging activity and comparative metabolic profiling of in vitro cultured and field grown Withania somnifera roots.

    PubMed

    Senthil, Kalaiselvi; Thirugnanasambantham, Pankajavalli; Oh, Taek Joo; Kim, So Hyun; Choi, Hyung Kyoon

    2015-01-01

    Free radical scavenging activity (FRSA), total phenolic content (TPC), and total flavonoid content (TFC) of in vitro cultured and field grown Withania somnifera (Ashwagandha) roots were investigated. Withanolides analysis and comprehensive metabolic profiling between 100% methanol extracts of in vitro and field grown root tissues was performed using high performance thin layer chromatography (HPTLC) and gas chromatography-mass spectrometry (GC-MS), respectively. Significantly higher levels of FRSA, TPC, and TFC were observed in in-vitro cultured roots compared with field grown samples. In addition, 30 day-cultured in vitro root samples (1 MIR) exhibited a significantly higher FRSA (IC50 81.01 μg/mL), TPC (118.91 mg GAE/g), and TFC (32.68 mg CE/g) compared with those in 45 day-cultured samples (1.5 MIR). Total of 29 metabolites were identified in in vitro cultured and field grown roots by GC-MS analysis. The metabolites included alcohols, organic acids, purine, pyrimidine, sugars, and putrescine. Vanillic acid was only observed in the in vitro cultured root samples, and higher level of the vanillic acid was observed in 1 MIR when compared to 1.5 MIR. Therefore, it is suggested that 1 MIR might serve as an alternative to field grown roots for the development of medicinal and functional food products.

  7. Free radical scavenging activity and comparative metabolic profiling of in vitro cultured and field grown Withania somnifera roots.

    PubMed

    Senthil, Kalaiselvi; Thirugnanasambantham, Pankajavalli; Oh, Taek Joo; Kim, So Hyun; Choi, Hyung Kyoon

    2015-01-01

    Free radical scavenging activity (FRSA), total phenolic content (TPC), and total flavonoid content (TFC) of in vitro cultured and field grown Withania somnifera (Ashwagandha) roots were investigated. Withanolides analysis and comprehensive metabolic profiling between 100% methanol extracts of in vitro and field grown root tissues was performed using high performance thin layer chromatography (HPTLC) and gas chromatography-mass spectrometry (GC-MS), respectively. Significantly higher levels of FRSA, TPC, and TFC were observed in in-vitro cultured roots compared with field grown samples. In addition, 30 day-cultured in vitro root samples (1 MIR) exhibited a significantly higher FRSA (IC50 81.01 μg/mL), TPC (118.91 mg GAE/g), and TFC (32.68 mg CE/g) compared with those in 45 day-cultured samples (1.5 MIR). Total of 29 metabolites were identified in in vitro cultured and field grown roots by GC-MS analysis. The metabolites included alcohols, organic acids, purine, pyrimidine, sugars, and putrescine. Vanillic acid was only observed in the in vitro cultured root samples, and higher level of the vanillic acid was observed in 1 MIR when compared to 1.5 MIR. Therefore, it is suggested that 1 MIR might serve as an alternative to field grown roots for the development of medicinal and functional food products. PMID:25874568

  8. Free Radical Scavenging Activity and Comparative Metabolic Profiling of In Vitro Cultured and Field Grown Withania somnifera Roots

    PubMed Central

    Senthil, Kalaiselvi; Thirugnanasambantham, Pankajavalli; Oh, Taek Joo; Kim, So Hyun; Choi, Hyung Kyoon

    2015-01-01

    Free radical scavenging activity (FRSA), total phenolic content (TPC), and total flavonoid content (TFC) of in vitro cultured and field grown Withania somnifera (Ashwagandha) roots were investigated. Withanolides analysis and comprehensive metabolic profiling between 100% methanol extracts of in vitro and field grown root tissues was performed using high performance thin layer chromatography (HPTLC) and gas chromatography-mass spectrometry (GC-MS), respectively. Significantly higher levels of FRSA, TPC, and TFC were observed in in-vitro cultured roots compared with field grown samples. In addition, 30 day-cultured in vitro root samples (1MIR) exhibited a significantly higher FRSA (IC50 81.01 μg/mL), TPC (118.91 mg GAE/g), and TFC (32.68 mg CE/g) compared with those in 45 day-cultured samples (1.5MIR). Total of 29 metabolites were identified in in vitro cultured and field grown roots by GC-MS analysis. The metabolites included alcohols, organic acids, purine, pyrimidine, sugars, and putrescine. Vanillic acid was only observed in the in vitro cultured root samples, and higher level of the vanillic acid was observed in 1MIR when compared to 1.5MIR. Therefore, it is suggested that 1MIR might serve as an alternative to field grown roots for the development of medicinal and functional food products. PMID:25874568

  9. Comparative study of polar and semipolar (112⁻2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112⁻2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750°C), the indium content (<15%) of the (112⁻2) and (0001) InGaN layers was similar. However, for temperatures less than 750°C, the indium content of the (112⁻2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112⁻2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112⁻2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112⁻2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  10. Mechanical properties of nanostructured carbon layers grown by CVD and PLD techniques

    NASA Astrophysics Data System (ADS)

    Mangione, A.; Lanzara, G.; Torrisi, L.; Caridi, F.

    2010-10-01

    Pulsed laser deposition (PLD) and chemical vapour deposition (CVD) have been proven to be among the most successful techniques for growing the entire spectrum of carbon films, which can be used in a wide range of technical applications. Here an investigation has been performed to explore the effect of different growing techniques (PLD and CVD) and process parameters (such as deposition time and substrate type) on the films' morphology and mechanical properties. The mechanical properties of the grown thin films were characterised by means of nano/micro indentation and scratch test techniques. It was observed that the thickness of the Al2O3 interlayer (between the Fe catalyst nanoparticles and the silicon substrate) is a critical parameter that can be used to significantly enhance the adhesion strength of PLD-grown carbon films. PLD-grown carbon films were in fact found to have higher adhesion to the substrate than CVD-grown carbon nanotubes (CNT), and the adhesion strength was found to increase with increasing thickness of the Al2O3 interlayer. On the other hand, CVD-grown carbon films (made of aligned CNTs) seem to offer a greater response in terms of elastic modulus. A thorough scanning electron microscopy characterisation suggested that the observed mechanical responses might be correlated to the films' morphology at the nano/microscale. It was in fact observed that, in PLD-grown samples, an increasing deposition time and Al2O3 content leads to a grain size increase and to a clustering effect, thus to a loss in film uniformity.

  11. Permafrost Active Layer Seismic Interferometry Experiment (PALSIE).

    SciTech Connect

    Abbott, Robert; Knox, Hunter Anne; James, Stephanie; Lee, Rebekah; Cole, Chris

    2016-01-01

    We present findings from a novel field experiment conducted at Poker Flat Research Range in Fairbanks, Alaska that was designed to monitor changes in active layer thickness in real time. Results are derived primarily from seismic data streaming from seven Nanometric Trillium Posthole seismometers directly buried in the upper section of the permafrost. The data were evaluated using two analysis methods: Horizontal to Vertical Spectral Ratio (HVSR) and ambient noise seismic interferometry. Results from the HVSR conclusively illustrated the method's effectiveness at determining the active layer's thickness with a single station. Investigations with the multi-station method (ambient noise seismic interferometry) are continuing at the University of Florida and have not yet conclusively determined active layer thickness changes. Further work continues with the Bureau of Land Management (BLM) to determine if the ground based measurements can constrain satellite imagery, which provide measurements on a much larger spatial scale.

  12. Layer-by-layer nanoencapsulation of camptothecin with improved activity.

    PubMed

    Parekh, Gaurav; Pattekari, Pravin; Joshi, Chaitanya; Shutava, Tatsiana; DeCoster, Mark; Levchenko, Tatyana; Torchilin, Vladimir; Lvov, Yuri

    2014-04-25

    160 nm nanocapsules containing up to 60% of camptothecin in the core and 7-8 polyelectrolyte bilayers in the shell were produced by washless layer-by-layer assembly of heparin and block-copolymer of poly-l-lysine and polyethylene glycol. The outer surface of the nanocapsules was additionally modified with polyethylene glycol of 5 kDa or 20 kDa molecular weight to attain protein resistant properties, colloidal stability in serum and prolonged release of the drug from the capsules. An advantage of the LbL coated capsules is the preservation of camptothecin lactone form with the shell assembly starting at acidic pH and improved chemical stability of encapsulated drug at neutral and basic pH, especially in the presence of albumin that makes such formulation more active than free camptothecin. LbL nanocapsules preserve the camptothecin lactone form at pH 7.4 resulting in triple activity of the drug toward CRL2303 glioblastoma cell. PMID:24508806

  13. Layer-by-layer nanoencapsulation of camptothecin with improved activity

    PubMed Central

    Parekh, Gaurav; Pattekari, Pravin; Joshi, Chaitanya; Shutava, Tatsiana; DeCoster, Mark; Levchenko, Tatyana; Torchilin, Vladimir; Lvov, Yuri

    2014-01-01

    160 nm nanocapsules containing up to 60% of camptothecin in the core and 7–8 polyelectrolyte bilayers in the shell were produced by washless layer-by-layer assembly of heparin and block-copolymer of poly-L-lysine and polyethylene glycol. The outer surface of the nanocapsules was additionally modified with polyethylene glycol of 5 kDa or 20 kDa molecular weight to attain protein resistant properties, colloidal stability in serum and prolonged release of the drug from the capsules. An advantage of the LbL coated capsules is the preservation of camptothecin lactone form with the shell assembly starting at acidic pH and improved chemical stability of encapsulated drug at neutral and basic pH, especially in the presence of albumin that makes such formulation more active than free camptothecin. LbL nanocapsules preserve the camptothecin lactone form at pH 7.4 resulting in triple activity of the drug toward CRL2303 glioblastoma cell. PMID:24508806

  14. Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer

    NASA Astrophysics Data System (ADS)

    Morel, P. H.; Haberfehlner, G.; Lafond, D.; Audoit, G.; Jousseaume, V.; Leroux, C.; Fayolle-Lecocq, M.; Baron, T.; Ernst, T.

    2012-08-01

    We report the fabrication and the characterization of chemical vapor deposition (CVD) grown silicon nanowires capacitors using a complementary-metal-oxide-semiconductor (CMOS) circuit interconnect level compatible process. Silicon nanowires have been grown by CVD on metallic interconnect lines used in today's CMOS circuits at low temperature (<425 °C) and using copper as catalyst. The nanowire assembly develops a huge surface leading to very high measured capacitance densities reaching 18 μF/cm2, and featuring a ×23 gain when compared to the same structure without nanowires. This opens the path toward embedded capacitances technologies by using bottom-up nanowires.

  15. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 μm/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  16. Crystallographic properties of as grown CdxHg1- xTe epitaxial layers deposited by cathodic sputtering

    NASA Astrophysics Data System (ADS)

    Roussille, R.

    Large areas (up to 15 cm 2) CdxHg1- xTe epitaxial layers with Cd composition ( x value) from 0.14 to 0.4 (thickness < 15 μm) have been sputtered on to CdTe substrates with [111] orientations. The layers are grown on substrates heated up to 200°C with a deposition rate of 0.6 μm/h. Crystallographic characterization has been carried out, using different techniques such as: reflection high energy electron diffraction (RHEED), reflection X-ray topography and transmission electron microscopy (TEM). RHEED patterns reveal a good crystallographic quality. X-ray topographies show that the substructure of the layer is very similar to that of the substrate. These results are confirmed by TEM observations.

  17. Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

    SciTech Connect

    Tselev, Alexander Kalinin, Sergei V.; Sangwan, Vinod K.; Jariwala, Deep; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

    2013-12-09

    Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

  18. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Kuznetsov, V. P.; Shmagin, V. B.; Drozdov, M. N.; Marychev, M. O.; Kudryavtsev, K. E.; Kuznetsov, M. V.; Andreev, B. A.; Kornaukhov, A. V.; Krasilnik, Z. F.

    2011-01-15

    The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400-800 Degree-Sign C and annealed in hydrogen atmosphere at a temperature of 800 Degree-Sign C for 30 min. The possible nature of the donor centers is discussed.

  19. Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

    DOEpatents

    Wang, George T.; Li, Qiming

    2013-04-23

    A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

  20. Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Calleja, E.; Sanchez, F.; Muñoz, E.; Gibart, P.; Powell, A.; Roberts, J. S.

    1995-08-01

    A systematic silicon contamination has been detected by deep level transient spectroscopy in undoped and n-type doped (Te, Se, Sn) AlGaAs layers, grown in two different metalorganic vapor phase epitaxy reactors. DX center generation by substitutional donors, with very specific capture and emission thermal barriers (fingerprints), is the key to unambiguously identifying their presence, with detection limits well below the standard secondary ion mass spectroscopy capability. We comment on the potential sources of Si contamination (most common in this epitaxial technique), and on the relevance of such contamination to interpreting correctly experimental data related to the microscopic structure of DX centers.

  1. Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics

    DOE PAGES

    Bulusu, Anuradha; Singh, Ankit K.; Wang, Cheng-Yin; Dindar, Amir; Fuentes-Hernandez, Canek; Kim, Hyungchul; Cullen, David A.; Kippelen, Bernard; Graham, Samuel

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion (CTE) mismatch, elastic mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition.more » We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50{degree sign}C/85% RH. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.« less

  2. Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics

    SciTech Connect

    Bulusu, Anuradha; Singh, Ankit K.; Wang, Cheng-Yin; Dindar, Amir; Fuentes-Hernandez, Canek; Kim, Hyungchul; Cullen, David A.; Kippelen, Bernard; Graham, Samuel

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion (CTE) mismatch, elastic mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50{degree sign}C/85% RH. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  3. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    NASA Astrophysics Data System (ADS)

    Bulusu, A.; Singh, A.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kim, H.; Cullen, D.; Kippelen, B.; Graham, S.

    2015-08-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  4. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    SciTech Connect

    Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  5. Epitaxial NiO (1 0 0) and NiO (1 1 1) films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lindahl, E.; Lu, J.; Ottosson, M.; Carlsson, J.-O.

    2009-08-01

    Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and α-Al 2O 3 (0 0 l) substrates at temperatures as low as 200 °C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180° on the α-Al 2O 3 (0 0 l) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02-0.05° in the rocking curve measurements.

  6. Fe 3O 4 films grown by laser ablation on mica with and without MgO buffer layers

    NASA Astrophysics Data System (ADS)

    Kennedy, R. J.; Stampe, P. A.

    1999-05-01

    Fe 3O 4 and MgO films have been grown on (0 0 1) mica substrates by ablation of an Fe or Mg metal target in an oxygen atmosphere using the fundamental frequency of a Nd : YAG laser. X-ray measurements show that the MgO films are epitaxial and (1 1 1) oriented. The Fe 3O 4 films grown on bare mica substrates are (1 1 1) oriented and random in plane. The introduction of an MgO buffer layer between the mica and the Fe 3O 4 films results in epitaxial (1 1 1) growth of Fe 3O 4. Room temperature high-field magnetization measurements of the random in plane Fe 3O 4/mica films are the same as for the epitaxial Fe 3O 4/MgO/mica films. The out of plane coercivities are almost twice as large as the in-plane coercivities, in contrast to ferrite films grown on Si and GaAs for which Hc|| ˜ Hc⊥ .

  7. Structural and optical properties of AgAlTe{sub 2} layers grown on sapphire substrates by closed space sublimation method

    SciTech Connect

    Uruno, A. Usui, A.; Kobayashi, M.

    2014-11-14

    AgAlTe{sub 2} layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe{sub 2} by X-ray diffraction. AgAlTe{sub 2} layers were grown to have a strong preference for the (112) orientation on both kinds of substrates. The variation in the orientation of grown layers was analyzed in detail using the X-ray diffraction pole figure measurement, which revealed that the AgAlTe{sub 2} had a preferential epitaxial relationship with the c-plane sapphire substrate. The atomic arrangement between the (112) AgAlTe{sub 2} layer and sapphire substrates was compared. It was considered that the high order of the lattice arrangement symmetry probably effectively accommodated the lattice mismatch. The optical properties of the grown layer were also evaluated by transmittance measurements. The bandgap energy was found to be around 2.3 eV, which was in agreement with the theoretical bandgap energy of AgAlTe{sub 2}.

  8. The microstructure of Ge/Si layers grown at low temperature

    NASA Astrophysics Data System (ADS)

    Roddatis, V. V.; Vasiliev, A. L.; Kovalchuk, M. V.

    2013-11-01

    Multilayer Si/Ge heterostructures with the thickness of Ge layers varying from 2 to 12 monolayers (ML) were formed by molecular beam epitaxy (MBE) on the (001) Si substrates at 300°C (Ge) and 450°C (Si). The study of the Si/Ge heterostructures was performed by transmission and Cs corrected scanning transmission electron microscopy (STEM). It was shown that the growth of Ge layers up to thickness of 5 ML occurs through the Frank - van der Merwe mechanism. For thicker Ge layers the growth mechanism of the Si-Ge heterostructure changes to Stranski - Krastanov with Si-Ge islands having the shape of inverted pyramids. The Si-Ge layer intermixing was discussed.

  9. Atomic force microscopy surface analysis of layered perovskite La2Ti2O7 particles grown by molten flux method

    NASA Astrophysics Data System (ADS)

    Orum, Aslihan; Takatori, Kazumasa; Hori, Shigeo; Ikeda, Tomiko; Yoshimura, Masamichi; Tani, Toshihiko

    2016-08-01

    Rectangular platelike particles of La2Ti2O7, a layered perovskite, were synthesized in KCl, NaCl, and LiCl by the molten flux method. The formation mechanism of the equilibrium shape in these alkali chloride fluxes was discussed in terms of the surface and interfacial energies of crystallographic planes. The atomic force microscopy (AFM) observations revealed that the developed plane of the platelike particles is along the interlayers in the {110}-type layered crystal structure, and is considered to represent the lowest surface energy plane in which strong, periodic Ti–O bond chains terminate. Herein, for the first time, a growth mechanism for La2Ti2O7 particles is proposed and discussed. Triangular prism structures along the c-axis were observed on the developed planes of KCl-grown particles whereas no such structures were found on those of LiCl-grown ones. AFM measurements suggest that the prism facets are {210}-La2Ti2O7, which results in lower interfacial energy within KCl.

  10. Large thermoelectricity via variable range hopping in chemical vapor deposition grown single-layer MoS2.

    PubMed

    Wu, Jing; Schmidt, Hennrik; Amara, Kiran Kumar; Xu, Xiangfan; Eda, Goki; Özyilmaz, Barbaros

    2014-05-14

    Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Microfabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ∼30 mV/K at room temperature are observed, which are much larger than those observed in other two-dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S ∼ T(1/3), suggesting a two-dimensional variable range hopping mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application. PMID:24749833

  11. Large thermoelectricity via variable range hopping in chemical vapor deposition grown single-layer MoS2.

    PubMed

    Wu, Jing; Schmidt, Hennrik; Amara, Kiran Kumar; Xu, Xiangfan; Eda, Goki; Özyilmaz, Barbaros

    2014-05-14

    Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Microfabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ∼30 mV/K at room temperature are observed, which are much larger than those observed in other two-dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S ∼ T(1/3), suggesting a two-dimensional variable range hopping mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application.

  12. Atomic force microscopy surface analysis of layered perovskite La2Ti2O7 particles grown by molten flux method

    NASA Astrophysics Data System (ADS)

    Orum, Aslihan; Takatori, Kazumasa; Hori, Shigeo; Ikeda, Tomiko; Yoshimura, Masamichi; Tani, Toshihiko

    2016-08-01

    Rectangular platelike particles of La2Ti2O7, a layered perovskite, were synthesized in KCl, NaCl, and LiCl by the molten flux method. The formation mechanism of the equilibrium shape in these alkali chloride fluxes was discussed in terms of the surface and interfacial energies of crystallographic planes. The atomic force microscopy (AFM) observations revealed that the developed plane of the platelike particles is along the interlayers in the {110}-type layered crystal structure, and is considered to represent the lowest surface energy plane in which strong, periodic Ti-O bond chains terminate. Herein, for the first time, a growth mechanism for La2Ti2O7 particles is proposed and discussed. Triangular prism structures along the c-axis were observed on the developed planes of KCl-grown particles whereas no such structures were found on those of LiCl-grown ones. AFM measurements suggest that the prism facets are {210}-La2Ti2O7, which results in lower interfacial energy within KCl.

  13. Reduced Cu concentration in CuAl-LPE-grown thin Si layers

    SciTech Connect

    Wang, T.H.; Ciszek, T.F.; Asher, S.; Reedy, R.

    1995-08-01

    Cu-Al has been found to be a good solvent system to grow macroscopically smooth Si layers with thicknesses in tens of microns on cast MG-Si substrates by liquid phase epitaxy (LPE) at temperatures near 900{degrees}C. This solvent system utilizes Al to ensure good wetting between the solution and substrate by removing silicon native oxides, and employs Cu to control Al doping into the layers. Isotropic growth is achieved because of a high concentration of solute silicon in the solution and the resulting microscopically rough interface. The incorporation of Cu in the Si layers, however, was a concern since Cu is a major solution component and is generally regarded as a bad impurity for silicon devices due to its fast diffusivity and deep energy levels in the band gap. A study by Davis shows that Cu will nonetheless not degrade solar cell performance until above a level of 10{sup 17} cm{sup -3}. This threshold is expected to be even higher for thin layer silicon solar cells owing to the less stringent requirement on minority carrier diffusion length. But to ensure long term stability of solar cells, lower Cu concentrations in the thin layers are still preferred.

  14. Identification of hydrolytic activities expressed by Aspergillus flavus grown on cotton carpel tissue

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Aspergillus flavus secreted at least two endoxylanase activities, two esterase activities and a pectolytic activity when grown on a medium containing cotton carpel tissue as a sole carbon source. A concentrated sample of A. flavus growth medium (6-day) was subjected to gel filtration chromatography...

  15. Anomalous hexagonal superstructure of aluminum oxide layer grown on NiAl(110) surface

    NASA Astrophysics Data System (ADS)

    Krukowski, Pawel; Chaunchaiyakul, Songpol; Minagawa, Yuto; Yajima, Nami; Akai-Kasaya, Megumi; Saito, Akira; Kuwahara, Yuji

    2016-11-01

    A modified method for the fabrication of a highly crystallized layer of aluminum oxide on a NiAl(110) surface is reported. The fabrication method involves the multistep selective oxidation of aluminum atoms on a NiAl(110) surface resulting from successive oxygen deposition and annealing. The surface morphology and local electronic structure of the novel aluminum oxide layer were investigated by high-resolution imaging using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. In contrast to the standard fabrication method of aluminum oxide on a NiAl(110) surface, the proposed method produces an atomically flat surface exhibiting a hexagonal superstructure. The superstructure exhibits a slightly distorted hexagonal array of close-packed bright protrusions with a periodicity of 4.5 ± 0.2 nm. Atomically resolved STM imaging of the aluminum oxide layer reveals a hexagonal arrangement of dark contrast spots with a periodicity of 0.27 ± 0.02 nm. On the basis of the atomic structure of the fabricated layer, the formation of α-Al2O3(0001) on the NiAl(110) surface is suggested.

  16. Enhancement of immune activation activities of Spirulina maxima grown in deep-sea water.

    PubMed

    Choi, Woon Yong; Kang, Do Hyung; Lee, Hyeon Yong

    2013-01-01

    In this study, the immuno-modulatory and anticancer activities of marine algae, Spirulina maxima grown in deep-sea water (DSW), were investigated. It was found that the extract of S. maxima, cultured in DSW, effectively suppressed the expression of Bcl2 in A549 cells as well as inhibiting various human cancer cells with concentration dependency, which possibly implies that the extracts may play more important roles in controlling cancer cell growth. The secretion of cytokines IL-6 and TNF-α from human B cells was also greatly increased, compared to those of the extract grown in conventional sea-water. The growth of Human Natural Killer (NK) cells in the presence of the extracts from DSW was significantly higher (12.2 × 104 viable cells/mL) when compared to the control (1.1 × 104 viable cells/mL). Based on HPLC analysis, the increase in the biological activities of the extracts from DSW was caused by considerably high amounts of β-carotene and ascorbic acid because the DSW contained high concentrations and good ratios of several key minerals for biosynthesizing β-carotene and ascorbic acid, as well as maintaining high cell growth. PMID:23743830

  17. Enhancement of Immune Activation Activities of Spirulina maxima Grown in Deep-Sea Water

    PubMed Central

    Choi, Woon Yong; Kang, Do Hyung; Lee, Hyeon Yong

    2013-01-01

    In this study, the immuno-modulatory and anticancer activities of marine algae, Spirulina maxima grown in deep-sea water (DSW), were investigated. It was found that the extract of S. maxima, cultured in DSW, effectively suppressed the expression of Bcl2 in A549 cells as well as inhibiting various human cancer cells with concentration dependency, which possibly implies that the extracts may play more important roles in controlling cancer cell growth. The secretion of cytokines IL-6 and TNF-α from human B cells was also greatly increased, compared to those of the extract grown in conventional sea-water. The growth of Human Natural Killer (NK) cells in the presence of the extracts from DSW was significantly higher (12.2 × 104 viable cells/mL) when compared to the control (1.1 × 104 viable cells/mL). Based on HPLC analysis, the increase in the biological activities of the extracts from DSW was caused by considerably high amounts of β-carotene and ascorbic acid because the DSW contained high concentrations and good ratios of several key minerals for biosynthesizing β-carotene and ascorbic acid, as well as maintaining high cell growth. PMID:23743830

  18. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition.

    PubMed

    Abou Chaaya, Adib; Viter, Roman; Bechelany, Mikhael; Alute, Zanda; Erts, Donats; Zalesskaya, Anastasiya; Kovalevskis, Kristaps; Rouessac, Vincent; Smyntyna, Valentyn; Miele, Philippe

    2013-01-01

    A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD) deposited ultrathin ZnO films in optical sensors and biosensors.

  19. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

    PubMed Central

    Abou Chaaya, Adib; Alute, Zanda; Erts, Donats; Zalesskaya, Anastasiya; Kovalevskis, Kristaps; Rouessac, Vincent; Smyntyna, Valentyn; Miele, Philippe

    2013-01-01

    Summary A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD) deposited ultrathin ZnO films in optical sensors and biosensors. PMID:24205465

  20. The Assembling of Poly (3-Octyl-Thiophene) on CVD Grown Single Layer Graphene

    PubMed Central

    Jiang, Yanqiu; Yang, Ling; Guo, Zongxia; Lei, Shengbin

    2015-01-01

    The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. Our results reveal the dynamic assembling of P3OT on single layer graphene. As on other substrates the epitaxial effect plays a role in determining the orientation of the P3OT assembling, however, the inter-thiophene distance along the backbone is consistent with that optimized in vaccum, no compression was observed. Adsorption of P3OT on ripples is weaker due to local curvature, which has been verified both by scanning tunneling microscopy and density functional theory simulation. Scanning tunneling microscopy also reveals that P3OT tends to form hairpin folds when meets a ripple. PMID:26634648

  1. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  2. Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Jayavel, P.; Kobayashi, Y.; Arafune, K.; Koyama, T.; Kumagawa, M.; Hayakawa, Y.

    2005-10-01

    We have investigated the structural and electrical properties of InAsxSb1-x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1-x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min-1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements.

  3. Kinetic limitation of chemical ordering in Bi2Te3-x Se x layers grown by molecular beam epitaxy.

    PubMed

    Schreyeck, S; Brunner, K; Kirchner, A; Bass, U; Grauer, S; Schumacher, C; Gould, C; Karczewski, G; Geurts, J; Molenkamp, L W

    2016-04-13

    We study the chemical ordering in Bi2Te3-x Se x grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi2Te2Se1 reaches a maximum of only ≈ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 x-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.

  4. Kinetic limitation of chemical ordering in Bi2Te3-x Se x layers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Schreyeck, S.; Brunner, K.; Kirchner, A.; Bass, U.; Grauer, S.; Schumacher, C.; Gould, C.; Karczewski, G.; Geurts, J.; Molenkamp, L. W.

    2016-04-01

    We study the chemical ordering in Bi2Te3-x Se x grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x  =  0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi2Te2Se1 reaches a maximum of only  ≈75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 x-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.

  5. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition.

    PubMed

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A Glen; Crowne, Frank J; Vajtai, Robert; Yakobson, Boris I; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  6. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGES

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; et al

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  7. Prodigiosin Induces Autolysins in Actively Grown Bacillus subtilis Cells

    PubMed Central

    Danevčič, Tjaša; Borić Vezjak, Maja; Tabor, Maja; Zorec, Maša; Stopar, David

    2016-01-01

    Prodigiosin produced by marine bacterium Vibrio ruber DSM 14379 exhibits a potent antimicrobial activity against a broad range of Gram positive and Gram negative bacteria. The mechanism of prodigiosin antimicrobial action, however, is not known. In this work, the effect of prodigiosin on Bacillus subtilis growth, cell membrane leakage, and induction of autolysins was studied. Treating B. subtilis with prodigiosin resulted in rapid decline of optical density and increased cell membrane leakage measured by β-galactosidase activity. Cell lysis was initiated immediately after treatment with prodigiosin in the middle exponential phase and was completed within 2 h. Lytic activity of prodigiosin in mutant strains with impaired autolysin genes lytABCD decreased for 80% compared to the wild type strain, while in lytABCDEF mutant strain prodigiosin had no bacteriolytic but only bacteriostatic effect. Fast prodigiosin lytic activity on individual B. subtilis cells was confirmed by a modified comet assay. The results indicate that prodigiosin autolysin induction in B. subtilis is growth phase dependent. PMID:26858704

  8. Prodigiosin Induces Autolysins in Actively Grown Bacillus subtilis Cells.

    PubMed

    Danevčič, Tjaša; Borić Vezjak, Maja; Tabor, Maja; Zorec, Maša; Stopar, David

    2016-01-01

    Prodigiosin produced by marine bacterium Vibrio ruber DSM 14379 exhibits a potent antimicrobial activity against a broad range of Gram positive and Gram negative bacteria. The mechanism of prodigiosin antimicrobial action, however, is not known. In this work, the effect of prodigiosin on Bacillus subtilis growth, cell membrane leakage, and induction of autolysins was studied. Treating B. subtilis with prodigiosin resulted in rapid decline of optical density and increased cell membrane leakage measured by β-galactosidase activity. Cell lysis was initiated immediately after treatment with prodigiosin in the middle exponential phase and was completed within 2 h. Lytic activity of prodigiosin in mutant strains with impaired autolysin genes lytABCD decreased for 80% compared to the wild type strain, while in lytABCDEF mutant strain prodigiosin had no bacteriolytic but only bacteriostatic effect. Fast prodigiosin lytic activity on individual B. subtilis cells was confirmed by a modified comet assay. The results indicate that prodigiosin autolysin induction in B. subtilis is growth phase dependent.

  9. Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

    SciTech Connect

    Groll, Nickolas R. Klug, Jeffrey A.; Claus, Helmut; Pellin, Michael J.; Proslier, Thomas; Cao, Chaoyue; Becker, Nicholas G.; Zasadzinski, John F.; Altin, Serdar

    2014-03-03

    A tunneling spectroscopy study is presented of superconducting MoN and Nb{sub 0.8}Ti{sub 0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported T{sub c} values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼10%) were obtained using an artificial tunnel barrier of Al{sub 2}O{sub 3} on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 10{sup 6} A/cm{sup 2} at T = 0.8T{sub c} for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.

  10. Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lin, Ying; Liu, Xing Qiang; Wang, Ti; Chen, Chao; Wu, Hao; Liao, Lei; Liu, Chang

    2013-03-01

    Two-dimensional arrays of Al nanoparticles (NPs) were used to demonstrate the localized surface plasmon resonance (LSPR) enhanced UV light emission from ZnO grown by atomic layer deposition. Well defined NP arrays with different shapes were fabricated on the surface of ZnO by electron-beam lithography. A theoretical analysis based on the finite-difference time-domain method was carried out to show the shape dependence of the LSPR wavelength. Time resolved photoluminescence and temperature-dependent photoluminescence measurements suggested that the Al NPs arrays increase the radiative recombination rate by the resonance coupling between the localized surface plasmons and the excitons of the ZnO. By top excitation of the Al NP arrays coupled with ZnO, a 2.6-fold enhancement in peak photoluminescence intensity was measured. The enhancement strongly depended on the NP’s shape, revealing an important way of geometrical tuning the UV-emission.

  11. Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition.

    PubMed

    Lin, Ying; Liu, Xing Qiang; Wang, Ti; Chen, Chao; Wu, Hao; Liao, Lei; Liu, Chang

    2013-03-29

    Two-dimensional arrays of Al nanoparticles (NPs) were used to demonstrate the localized surface plasmon resonance (LSPR) enhanced UV light emission from ZnO grown by atomic layer deposition. Well defined NP arrays with different shapes were fabricated on the surface of ZnO by electron-beam lithography. A theoretical analysis based on the finite-difference time-domain method was carried out to show the shape dependence of the LSPR wavelength. Time resolved photoluminescence and temperature-dependent photoluminescence measurements suggested that the Al NPs arrays increase the radiative recombination rate by the resonance coupling between the localized surface plasmons and the excitons of the ZnO. By top excitation of the Al NP arrays coupled with ZnO, a 2.6-fold enhancement in peak photoluminescence intensity was measured. The enhancement strongly depended on the NP's shape, revealing an important way of geometrical tuning the UV-emission. PMID:23466715

  12. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    SciTech Connect

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E.; Estrade, S.

    2011-07-18

    We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  13. Quantum size effects in TiO2 thin films grown by atomic layer deposition.

    PubMed

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  14. Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

    NASA Astrophysics Data System (ADS)

    Schilirò, Emanuela; Lo Nigro, Raffaella; Fiorenza, Patrick; Roccaforte, Fabrizio

    2016-07-01

    This letter reports on the negative charge trapping in Al2O3 thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al2O3 film (1 × 1012 cm-2) occurs upon high positive bias stress (>10V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1eV. The results provide indications on the possible nature of the trapping defects and, hence, on the strategies to improve this technology for 4H-SiC devices.

  15. Antifungal activity of Curcuma longa grown in Thailand.

    PubMed

    Wuthi-udomlert, M; Grisanapan, W; Luanratana, O; Caichompoo, W

    2000-01-01

    Curcuma longa Linn. or turmeric (Zingiberaceae) is a medicinal plant widely used and cultivated in tropical regions. According to Thai traditional texts, fresh and dried rhizomes are used as peptic ulcer treatment, carminatives, wound treatment and anti-inflammatory agent. Using hydro distillation, 1.88% and 7.02% (v/w) volatile oils were extracted from fresh and dried rhizomes, respectively, and 6.95% (w/w)crude curcuminoids were extracted from dried rhizomes. Dried powder was extracted with 95% ethanol and yielded 29.52% (w/w) crude ethanol extract composed of curcumin (11.6%), demethoxycurcumin (10.32%) and bisdemethoxycurcumin (10.77%). These extracts were tested for antifungal activity by agar disc diffusion method against 29 clinical strains of dermatophytes. It was found that crude ethanol extract exhibited an inhibition zone range of 6.1 to 26.0 mm. There was no inhibition activity from crude curcuminoids while curcumin, demethoxycurcumin and bisdemethoxycutcumin gave different inhibition zone diameters ranging from 6.1 to 16.0 mm. Although antifungal activity of undiluted freshly distilled oil and 18-month-old oil revealed some differences, the inhibition zone diameters for both extracts varied within 26.1 to 46.0 mm. With 200 mg/ml ketoconazole, the activities of the standard agent were similar to the oil, both freshly distilled and 18-month-old, but were significantly different from those of curcuminoid compounds and crude ethanol extracts (p < 0.01). Turmeric oil was also tested for its minimum inhibitory concentration (MIC) by broth dilution method. The MICs of freshly distilled and 18-month-old oils were 7.8 and 7.2 mg/ml respectively. PMID:11414453

  16. Characterization of nanostructured photosensitive (NiS){sub x}(CdS){sub (1-x)} composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

    SciTech Connect

    Ubale, A.U.; Bargal, A.N.

    2011-07-15

    Highlights: {yields} Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. {yields} The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. {yields} The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature. -- Abstract: Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS){sub x}(CdS){sub (1-x)} films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS){sub x}(CdS){sub (1-x)} thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature.

  17. Layered spherical carbon composites with nanoparticles of different metals grown simultaneously inside and outside

    NASA Astrophysics Data System (ADS)

    Tang, Shaochun; Vongehr, Sascha; Meng, Xiangkang

    2012-03-01

    We report a general one-step route to place nanoparticles (NPs) of different noble metals controllably into interior or surface locations of submicron nanoporous carbon spheres (CSs). In particular, Pd and Au NPs can be easily put either inside or outside of the CSs by selecting these metals’ differently charged precursor ions. Employing mixed precursor solutions, the method allows different metals to grow simultaneously yet selectively in the separate locations, thus resulting in composites with a complex layered structure, for example Pd or Au outside and Ag inside, Au or Pt outside and Pd inside, and other combinations. The synthesis is fast and needs no additional steps like a functionalization of surfaces. It crucially involves microwave heating, the power setting of which further influences the locations and sizes of the NPs especially in the interior of the amorphous carbon matrix. The three-dimensional composite structures are analyzed by transmission electron microscopy and energy dispersed x-ray spectroscopy combined with quantitative analysis by comparison with simulation. The UV-visible absorption of monometallic and layered composites is compared. The involved mechanisms leading to the selective decoration are discussed; important aspects being the charge of the precursor ions and selective microwave absorption.

  18. Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

    SciTech Connect

    Kurosawa, Masashi; Kato, Motohiro; Yamaha, Takashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-04-27

    High-Sn-content SiSn alloys are strongly desired for the next-generation near-infrared optoelectronics. A polycrystalline growth study has been conducted on amorphous SiSn layers with a Sn-content of 2%–30% deposited on either a substrate of SiO{sub 2} or SiN. Incorporating 30% Sn into Si permits the crystallization of the amorphous layers at annealing temperatures below the melting point of Sn (231.9 °C). Composition analyses indicate that approximately 20% of the Sn atoms are substituted into the Si lattice after solid-phase crystallization at 150–220 °C for 5 h. Correspondingly, the optical absorption edge is red-shifted from 1.12 eV (Si) to 0.83 eV (Si{sub 1−x}Sn{sub x} (x ≈ 0.18 ± 0.04)), and the difference between the indirect and direct band gap is significantly reduced from 3.1 eV (Si) to 0.22 eV (Si{sub 1−x}Sn{sub x} (x ≈ 0.18 ± 0.04)). These results suggest that with higher substitutional Sn content the SiSn alloys could become a direct band-gap material, which would provide benefits for Si photonics.

  19. Layered spherical carbon composites with nanoparticles of different metals grown simultaneously inside and outside.

    PubMed

    Tang, Shaochun; Vongehr, Sascha; Meng, Xiangkang

    2012-03-01

    We report a general one-step route to place nanoparticles (NPs) of different noble metals controllably into interior or surface locations of submicron nanoporous carbon spheres (CSs). In particular, Pd and Au NPs can be easily put either inside or outside of the CSs by selecting these metals' differently charged precursor ions. Employing mixed precursor solutions, the method allows different metals to grow simultaneously yet selectively in the separate locations, thus resulting in composites with a complex layered structure, for example Pd or Au outside and Ag inside, Au or Pt outside and Pd inside, and other combinations. The synthesis is fast and needs no additional steps like a functionalization of surfaces. It crucially involves microwave heating, the power setting of which further influences the locations and sizes of the NPs especially in the interior of the amorphous carbon matrix. The three-dimensional composite structures are analyzed by transmission electron microscopy and energy dispersed x-ray spectroscopy combined with quantitative analysis by comparison with simulation. The UV-visible absorption of monometallic and layered composites is compared. The involved mechanisms leading to the selective decoration are discussed; important aspects being the charge of the precursor ions and selective microwave absorption.

  20. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  1. Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique

    SciTech Connect

    Krajewski, Tomasz A. Dybko, Krzysztof; Luka, Grzegorz; Wachnicki, Lukasz; Kopalko, Krzysztof; Paszkowicz, Wojciech; Guziewicz, Elzbieta

    2015-07-21

    In this work, the analysis of the temperature-dependent electrical conductivity of highly crystalline zinc oxide (ZnO) thin films obtained by the Atomic Layer Deposition (ALD) method is performed. It is deduced that the most important scattering mechanisms are: scattering by ionized defects (at low temperatures) as well as by phonons (mainly optical ones) at higher temperatures. Nevertheless, the role of grain boundaries in the carrier mobility limitation ought to be included as well. These conclusions are based on theoretical analysis and temperature-dependent Hall mobility measurements. The presented results prove that existing models can explain the mobility behavior in the ALD-ZnO films, being helpful for understanding their transport properties, which are strongly related both to the crystalline quality of deposited ZnO material and defects in its lattice.

  2. High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

    NASA Astrophysics Data System (ADS)

    Kakanakova-Georgieva, A.; Nilsson, D.; Janzén, E.

    2012-01-01

    We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500-1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ˜700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.

  3. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    PubMed Central

    Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    Summary We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems. PMID:24605275

  4. Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Krajewski, Tomasz A.; Dybko, Krzysztof; Luka, Grzegorz; Wachnicki, Lukasz; Kopalko, Krzysztof; Paszkowicz, Wojciech; Godlewski, Marek; Guziewicz, Elzbieta

    2015-07-01

    In this work, the analysis of the temperature-dependent electrical conductivity of highly crystalline zinc oxide (ZnO) thin films obtained by the Atomic Layer Deposition (ALD) method is performed. It is deduced that the most important scattering mechanisms are: scattering by ionized defects (at low temperatures) as well as by phonons (mainly optical ones) at higher temperatures. Nevertheless, the role of grain boundaries in the carrier mobility limitation ought to be included as well. These conclusions are based on theoretical analysis and temperature-dependent Hall mobility measurements. The presented results prove that existing models can explain the mobility behavior in the ALD-ZnO films, being helpful for understanding their transport properties, which are strongly related both to the crystalline quality of deposited ZnO material and defects in its lattice.

  5. Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb).

    PubMed

    Hansen, Per-Anders; Fjellvåg, Helmer; Finstad, Terje; Nilsen, Ola

    2013-08-14

    Ln2O3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd)3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone as precursors. The temperature range for depositions was 200-400 °C. Growth rates were measured by spectroscopic ellipsometry and a region with a constant growth rate (ALD window) was found for Ln = Ho and Tm. All the compounds are grown as amorphous films at low temperatures, whereas crystalline films (cubic C-Ln2O3) are obtained above a certain temperature ranging from 300 to 250 °C for Nd2O3 to Yb2O3, respectively. AFM studies show that the films were smooth (rms < 1 nm) except for depositions at the highest temperatures. The refractive index was measured by spectroscopic ellipsometry and was found to depend on the deposition temperature. Optical absorption measurements show that the absorption from the f-f transitions depends strongly on the crystallinity of the material. The clear correlation between the degree of crystallinity, optical absorptions and refractive indices is discussed.

  6. Endocytic activity of Sertoli cells grown in bicameral culture chambers

    SciTech Connect

    Dai, R.X.; Djakiew, D.; Dym, M.

    1987-07-01

    Immature rat Sertoli cells were cultured for 7 to 14 days on Millipore filters impregnated with a reconstituted basement membrane extract in dual-environment (bicameral) culture chambers. Electron microscopy of the cultured cells revealed the presence of rod-shaped mitochondria, Golgi apparatus, rough endoplasmic reticulum, and Sertoli-Sertoli tight junctions, typical of these cells in vivo. The endocytic activity of both the apical and basal surfaces of the Sertoli cells was examined by either adding alpha 2-macroglobulin (alpha 2-M) conjugated to 20 nm gold particles to the apical chamber or by adding /sup 125/I labeled alpha 2-M to the basal chamber. During endocytosis from the apical surface of Sertoli cells, the alpha 2-M-gold particles were bound initially to coated pits and then internalized into coated vesicles within 5 minutes. After 10 minutes, the alpha 2-M-gold was found in multi-vesicular bodies (MVBs) and by 30 minutes it was present in the lysosomes. The proportion of alpha 2-M-gold found within endocytic cell organelles after 1 hour of uptake was used to estimate the approximate time that this ligand spent in each type of organelle. The alpha 2-M-gold was present in coated pits, coated vesicles, multivesicular bodies, and lysosomes for approximately 3, 11, 22, and 24 minutes, respectively. This indicates that the initial stages of endocytosis are rapid, whereas MVBs and lysosomes are relatively long-lived.

  7. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  8. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.

    PubMed

    Niu, Gang; Capellini, Giovanni; Lupina, Grzegorz; Niermann, Tore; Salvalaglio, Marco; Marzegalli, Anna; Schubert, Markus Andreas; Zaumseil, Peter; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Montalenti, Francesco; Xie, Ya-Hong; Schroeder, Thomas

    2016-01-27

    Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especially dislocations. Single-layer graphene/Ge/Si-tip Schottky junctions were fabricated, and thanks to the absence of extended defects in Ge islands, they demonstrate high-performance photodetection characteristics with responsivity of ∼45 mA W(-1) and an Ion/Ioff ratio of ∼10(3). PMID:26709534

  9. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  10. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    NASA Astrophysics Data System (ADS)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  11. Optical and structural properties of BGaN layers grown on different substrates

    NASA Astrophysics Data System (ADS)

    Kadys, A.; Mickevičius, J.; Malinauskas, T.; Jurkevičius, J.; Kolenda, M.; Stanionytė, S.; Dobrovolskas, D.; Tamulaitis, G.

    2015-11-01

    Growth of BGaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN templates on sapphire. X-ray diffraction, atomic force microscopy and photoluminescence spectroscopy were exploited to characterize the structural quality, surface morphology, luminescence efficiency, and boron content. Silicon carbide was shown to be slightly superior to AlN/sapphire and considerably better than GaN/sapphire as the most favorable substrate to incorporate a possibly higher boron content. Increasing TEB flow rate at correspondingly optimized growth temperature and V/III ratio enabled us to achieve the boron content of up to 5.5%, though at the expense of structural quality. We showed that the band gap bowing parameter is similar for the epilayers deposited on all the three templates/substrates under study and is approximately equal to 4 eV, substantially lower than reported before.

  12. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  13. Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Harjuoja, Jenni; Väyrynen, Samuli; Putkonen, Matti; Niinistö, Lauri; Rauhala, Eero

    2006-01-01

    Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi 2O 3-SiO 2 and Bi 2O 3-TiO 2 systems was investigated. Control of the stoichiometry of Bi-Si-O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO 2- and YSZ-buffered Si(1 0 0). The Bi-Ti-O thin films were deposited on Si(1 0 0) substrate. Both Bi-Si-O and Bi-Ti-O thin films were amorphous after deposition. Highly a-axis oriented Bi 2SiO 5 thin films were obtained when the Bi-Si-O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi-Ti-O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.

  14. High photoactivity in ultrathin as-grown hematite films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Klug, Jeffrey; Becker, Nicholas; Riha, Shannon; Martinson, Alex; Elam, Jeffrey; Pellin, Michael; Proslier, Thomas

    2013-03-01

    Nanostructured hematite (α-Fe2O3) has been widely studied for use in a variety of thin film applications including solar energy conversion, water oxidation, catalysis, and gas sensing. Among established deposition methods, atomic layer deposition (ALD) is a leading technique for large-scale, controlled synthesis of a wide range of nanostructured materials. In this work, ALD of Fe2O3 is demonstrated using FeCl3 and H2O precursors at growth temperatures between 200 -350° C. Self-limiting growth of Fe2O3 is observed with a growth rate of ~ 0 . 06 nm/cycle. As-deposited, films are nanocrystalline with low Cl impurities and a mixture of α- and γ-Fe2O3. Post-deposition annealing in O2 leads to phase-pure hematite with increased out-of-plane grain size. Photoelectrochemical measurements under simulated solar illumination reveal high photoactivity toward water oxidation in both as-deposited and post-annealed films. Planar films deposited at low temperature (235°C) exhibit remarkably high photocurrent densities ~ 0 . 71 mA/cm2 at 1.53 V vs. the reversible hydrogen electrode (RHE) without further processing. Films annealed in air at 500°C show current densities of up to 0.84 mA/cm2 (1.53V vs. RHE). This work was supported by the U.S. Department of Energy, Office of Science under contract No. DE-AC02-06CH11357 and by the American Recovery and Reinvestment Act (ARRA) through the US Department of Energy, Office of High Energy Physics.

  15. Effects of Organophosphorus Flame Retardants on Spontaneous Activity in Neuronal Networks Grown on Microelectrode Arrays

    EPA Science Inventory

    EFFECTS OF ORGANOPHOSPHORUS FLAME RETARDANTS ON SPONTANEOUS ACTIVITY IN NEURONAL NETWORKS GROWN ON MICROELECTRODE ARRAYS TJ Shafer1, K Wallace1, WR Mundy1, M Behl2,. 1Integrated Systems Toxicology Division, NHEERL, USEPA, RTP, NC, USA, 2National Toxicology Program, NIEHS, RTP, NC...

  16. Electrically active light-element complexes in silicon crystals grown by cast method

    NASA Astrophysics Data System (ADS)

    Sato, Kuniyuki; Ogura, Atsushi; Ono, Haruhiko

    2016-09-01

    Electrically active light-element complexes called thermal donors and shallow thermal donors in silicon crystals grown by the cast method were studied by low-temperature far-infrared absorption spectroscopy. The relationship between these complexes and either crystal defects or light-element impurities was investigated by comparing different types of silicon crystals, that is, conventional cast-grown multicrystalline Si, seed-cast monolike-Si, and Czochralski-grown Si. The dependence of thermal and the shallow thermal donors on the light-element impurity concentration and their annealing behaviors were examined to compare the crystals. It was found that crystal defects such as dislocations and grain boundaries did not affect the formation of thermal or shallow thermal donors. The formation of these complexes was dominantly affected by the concentration of light-element impurities, O and C, independent of the existence of crystal defects.

  17. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Maksudur Rahman, Mohammad; Higo, Akio; Sekhar, Halubai; Erman Syazwan, Mohd; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji

    2016-03-01

    The effect of passivation films on a Si quantum dot superlattice (QDSL) was investigated to generate high photocurrent in solar-cell applications. Three types of passivation films, sputter-grown amorphous silicon carbide (a-SiC), hydrogenated a-SiC (a-SiC:H), and atomic-layer-deposited aluminum oxide (ALD-Al2O3), were used to passivate the Si QDSLs containing a stack of four 4 nm Si nanodisks (NDs) and 2 nm silicon carbide (SiC) films fabricated by neutral beam etching (NBE). Because of the high surface-to-volume ratio typically present in quantum Si-NDs formed in the top-down NBE process, there is a tendency to form larger surface dangling bonds on untreated Si-ND surfaces as well as to have short distance (<10 nm) between high-aspect-ratio nanopillars of stacked 4 nm Si-NDs/2 nm SiC films, which conventionally sputter SiC films cannot uniformly cover. Therefore, we optimized the passivation techniques with an ALD-Al2O3 film. Scanning electron microscopy (SEM) analysis helped to explain the surface morphology before and after the passivation of the QDSLs. After the completion of the passivation process, the quality of the top surface films of the QDSLs was analyzed from the surface roughness by atomic force microscopy (AFM) analysis, which revealed that ALD-Al2O3 passivated films had the smallest roughness (RMS) of 1.09 nm with respect to sputter-grown a-SiC (RMS: 1.75 nm) and a-SiC:H (RMS: 1.54 nm) films. Conductive atomic force microscopy (CAFM) revealed that ALD-Al2O3 passivation decreased the surface-leakage current as a result of proper passivation of side-wall surface defects in the QDSLs. The carrier transport characteristics were extracted from the QDSLs using the photovoltaic (PV) properties of p++/i/n+ solar cells, where the QDSLs consisted of different passivation layers acting as intermediate layers (i-layers) between the high-doping-density p++ Si (1 × 1020 cm-3) and n+ Si (1 × 1019 cm-3) substrates. High-doping-density p++ Si acted as a hole

  18. Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

    NASA Astrophysics Data System (ADS)

    Petrushkov, M. O.; Putyato, M. A.; Gutakovsky, A. K.; Preobrazhenskii, V. V.; Loshkarev, I. D.; Emelyanov, E. A.; Semyagin, B. R.; Vasev, A. V.

    2016-08-01

    GaAs films with low-temperature GaAs (LT-GaAs) layers were grown by molecular beam epitaxy (MBE) method on vicinal (001) Si substrates oriented 6° off towards [110]. The grown structures were different with the thickness of LT-GaAs layers and its arrangement in the film. The processes of epitaxial layers nucleation and growth were controlled by reflection high energy electron diffraction (RHEED) method. Investigations of crystalline properties of the grown structures were carried out by the methods of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The crystalline perfection of the GaAs films with LT-GaAs layers and the GaAs films without ones was comparable. It was found that in the LT- GaAs/Si layers the arsenic clusters are formed, as it occurs in the LT-GaAs/GaAs system without dislocation. It is shown that large clusters are formed mainly on the dislocations. However, the clusters have practically no effect on the density and the propagation path of threading dislocations. With increasing thickness of LT-GaAs layer the dislocations are partly bent along the LT-GaAs/GaAs interface due to the presence of stresses.

  19. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

    2015-03-01

    We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

  20. Nanoporous Aluminum Oxide Membranes Coated with Atomic Layer Deposition-Grown Titanium Dioxide for Biomedical Applications: An In Vitro Evaluation.

    PubMed

    Petrochenko, Peter E; Kumar, Girish; Fu, Wujun; Zhang, Qin; Zheng, Jiwen; Liang, Chengdu; Goering, Peter L; Narayan, Roger J

    2015-12-01

    The surface topographies of nanoporous anodic aluminum oxide (AAO) and titanium dioxide (TiO2) membranes have been shown to modulate cell response in orthopedic and skin wound repair applications. In this study, we: (1) demonstrate an improved atomic layer deposition (ALD) method for coating the porous structures of 20, 100, and 200 nm pore diameter AAO with nanometer-thick layers of TiO2 and (2) evaluate the effects of uncoated AAO and TiO2-coated AAO on cellular responses. The TiO2 coatings were deposited on the AAO membranes without compromising the openings of the nanoscale pores. The 20 nm TiO2-coated membranes showed the highest amount of initial protein adsorption via the micro bicinchoninic acid (micro-BCA) assay; all of the TiO2-coated membranes showed slightly higher protein adsorption than the uncoated control materials. Cell viability, proliferation, and inflammatory responses on the TiO2-coated AAO membranes showed no adverse outcomes. For all of the tested surfaces, normal increases in proliferation (DNA content) of L929 fibroblasts were observed over from 4 hours to 72 hours. No increases in TNF-alpha production were seen in RAW 264.7 macrophages grown on TiO2-coated AAO membranes compared to uncoated AAO membranes and tissue culture polystyrene (TCPS) surfaces. Both uncoated AAO membranes and TiO2-coated AAO membranes showed no significant effects on cell growth and inflammatory responses. The results suggest that TiO2-coated AAO may serve as a reasonable prototype material for the development of nanostructured wound repair devices and orthopedic implants. PMID:26510320

  1. Nanoporous aluminum oxide membranes coated with atomic layer deposition-grown titanium dioxide for biomedical applications: An in vitro evaluation

    DOE PAGES

    Kumar, Girish; Fu, Wujun; Zhang, Qin Fen; Zheng, Jiwen; Liang, Chengdu; Goering, Peter L.; Narayan, Roger J.; Petrochenko, Peter E.

    2015-12-01

    The surface topographies of nanoporous anodic aluminum oxide (AAO) and titanium dioxide (TiO2) membranes have been shown to modulate cell response in orthopedic and skin wound repair applications. In this study, we: (1) demonstrate an improved atomic layer deposition (ALD) method for coating the porous structures of 20, 100, and 200 nm pore diameter AAO with nanometer-thick layers of TiO2 and (2) evaluate the effects of uncoated AAO and TiO2-coated AAO on cellular responses. The TiO2 coatings were deposited on the AAO membranes without compromising the openings of the nanoscale pores. The 20 nm TiO2-coated membranes showed the highest amountmore » of initial protein adsorption via the micro bicinchoninic acid (micro-BOA) assay; all of the TiO2-coated membranes showed slightly higher protein adsorption than the uncoated control materials. Cell viability, proliferation, and inflammatory responses on the TiO2-coated AAO membranes showed no adverse outcomes. For all of the tested surfaces, normal increases in proliferation (DNA content) of L929 fibroblasts were observed over from 4 hours to 72 hours. No increases in TNF-alpha production were seen in RAW 264.7 macrophages grown on TiO2-coated AAO membranes compared to uncoated AAO membranes and tissue culture polystyrene (TOPS) surfaces. Both uncoated AAO membranes and TiO2-coated AAO membranes showed no significant effects on cell growth and inflammatory responses. In conclusion, the results suggest that TiO2-coated AAO may serve as a reasonable prototype material for the development of nanostructured wound repair devices and orthopedic implants.« less

  2. Nanoporous Aluminum Oxide Membranes Coated with Atomic Layer Deposition-Grown Titanium Dioxide for Biomedical Applications: An In Vitro Evaluation.

    PubMed

    Petrochenko, Peter E; Kumar, Girish; Fu, Wujun; Zhang, Qin; Zheng, Jiwen; Liang, Chengdu; Goering, Peter L; Narayan, Roger J

    2015-12-01

    The surface topographies of nanoporous anodic aluminum oxide (AAO) and titanium dioxide (TiO2) membranes have been shown to modulate cell response in orthopedic and skin wound repair applications. In this study, we: (1) demonstrate an improved atomic layer deposition (ALD) method for coating the porous structures of 20, 100, and 200 nm pore diameter AAO with nanometer-thick layers of TiO2 and (2) evaluate the effects of uncoated AAO and TiO2-coated AAO on cellular responses. The TiO2 coatings were deposited on the AAO membranes without compromising the openings of the nanoscale pores. The 20 nm TiO2-coated membranes showed the highest amount of initial protein adsorption via the micro bicinchoninic acid (micro-BCA) assay; all of the TiO2-coated membranes showed slightly higher protein adsorption than the uncoated control materials. Cell viability, proliferation, and inflammatory responses on the TiO2-coated AAO membranes showed no adverse outcomes. For all of the tested surfaces, normal increases in proliferation (DNA content) of L929 fibroblasts were observed over from 4 hours to 72 hours. No increases in TNF-alpha production were seen in RAW 264.7 macrophages grown on TiO2-coated AAO membranes compared to uncoated AAO membranes and tissue culture polystyrene (TCPS) surfaces. Both uncoated AAO membranes and TiO2-coated AAO membranes showed no significant effects on cell growth and inflammatory responses. The results suggest that TiO2-coated AAO may serve as a reasonable prototype material for the development of nanostructured wound repair devices and orthopedic implants.

  3. Enhanced photocatalytic performance in atomic layer deposition grown TiO{sub 2} thin films via hydrogen plasma treatment

    SciTech Connect

    Sasinska, Alexander; Singh, Trilok; Wang, Shuangzhou; Mathur, Sanjay; Kraehnert, Ralph

    2015-01-15

    The authors report the effect of hydrogen plasma treatment on TiO{sub 2} thin films grown by atomic layer deposition as an effective approach for modifying the photoanode materials in order to enhance their photoelectrochemical performance. Hydrogen plasma treated TiO{sub 2} thin films showed an improved absorption in the visible spectrum probably due to surface reduction. XPS analysis confirmed the formation of Ti{sup 3+} states upon plasma treatment. Hydrogen plasma treatment of TiO{sub 2} films enhanced the measured photocurrent densities by a factor of 8 (1 mA/cm{sup 2} at 0.8 V versus normal hydrogen electrode) when compared to untreated TiO{sub 2} (0.12 mA/cm{sup 2}). The enhancement in photocurrent is attributed to the formation of localized electronic states in mid band-gap region, which facilitate efficient separation and transportation of photo excited charge carriers in the UV region of electromagnetic spectrum.

  4. Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zastrow, S.; Gooth, J.; Boehnert, T.; Heiderich, S.; Toellner, W.; Heimann, S.; Schulz, S.; Nielsch, K.

    2013-03-01

    Sb2Te3 has recently been an object of intensive research since its promising applicability in thermoelectric, in phase-change memory devices and as a topological insulator. In this work, we report highly textured Sb2Te3 thin films, grown by atomic layer deposition on Si/SiO2 wafers based on the reaction of SbCl3 and (Et3Si)2Te. The low deposition temperature at 80 °C allows the pre-patterning of the Sb2Te3 by standard lithography processes. A platform to characterize the Seebeck coefficient S, the electrical conductivity σ as well as the Hall coefficient RH on the same film has been developed. Comparing all temperature-dependent transport properties, three different conductive regions in the temperature range of 50-400 K are found. Room temperature values of S = 146 × 10-6 VK-1, σ = 104 Sm-1 and mobility µ = 270.5 × 10-4 m2 V-1 s-1 are determined. The low carrier concentration in the range of n = 2.4 × 1018 cm-3 at 300 K quantifies the low defect content of the Sb2Te3 thin films.

  5. Magnetic properties of nano-patterned GaMnAs films grown on ZnCdSe buffer layers

    NASA Astrophysics Data System (ADS)

    Dong, Sining; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek

    Magnetic semiconductor nanostructures are attracting intense attention, both because of their fundamental physical properties, and because of the promise which they hold for building smaller, faster and more energy-efficient devices. In this study we report successful MBE growth of GaMnAs films on the GaAs (100) substrates with ZnCdSe buffer layers, which results in perpendicular magnetic easy axis in the GaMnAs films. The GaMnAs/ZnCdSe films have been etched into nano-stripe shapes with various widths below 200nm by e-beam lithography, which resulted in a new geometry of interest for perpendicular magnetic recording. Magnetic anisotropy of as-grown GaMnAs films and nano-stripes was then studied by SQUID magnetometry. The results indicate that the GaMnAs films consist of magnetic domains with magnetization normal to the film plane, having rather high coercivety, which survives after nanofabrication. This is also confirmed by the dynamics of the domain motion as shown by AC susceptibility measurements. These findings are of interest for understanding the magnetic anisotropy mechanisms in GaMnAs and its domain structures, as well as for designing of nano-sized spintronic devices which require hard ferromagnetic behavior with perpendicular easy axes. This work was supported by the National Science Foundation Grant DMR1400432.

  6. Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Donchev, V.; Milanova, M.; Lemieux, J.; Shtinkov, N.; Ivanov, I. G.

    2016-03-01

    We present an experimental and theoretical study of Ga(In)AsN layers with a thickness of around 1 μm grown by liquid-phase epitaxy (LPE) on n-type GaAs substrates. The samples are studied by surface photovoltage (SPV) spectroscopy and by photoluminescence spectroscopy. Theoretical calculations of the electronic structure and the spectral dependence of the dielectric function are carried out for different nitrogen concentrations using a full-band tight-binding approach in the sp3d5s*sN parameterisation. The SPV spectra measured at room temperature clearly show a red shift of the absorption edge with respect to the absorption of the GaAs substrate. This shift, combined with the results of the theoretical calculations, allows assessing the nitrogen concentration in different samples. The latter increases with increasing the In content. The analysis of the SPV phase spectra provides information about the alignment of the energy bands across the structures. The photoluminescence measurements performed at 2 K show a red shift of the emission energy with respect to GaAs, in agreement with the SPV results.

  7. Melanin as an active layer in biosensors

    SciTech Connect

    Piacenti da Silva, Marina Congiu, Mirko Oliveira Graeff, Carlos Frederico de; Fernandes, Jéssica Colnaghi Biziak de Figueiredo, Natália Mulato, Marcelo

    2014-03-15

    The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

  8. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films.

    PubMed

    Iqbal, M Waqas; Iqbal, M Zahir; Khan, M Farooq; Shehzad, M Arslan; Seo, Yongho; Park, Jong Hyun; Hwang, Chanyong; Eom, Jonghwa

    2015-01-01

    An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, is an attractive characteristic for developing optoelectronic devices, as well as field-effect transistors. However, its relatively low mobility and electrical characteristics susceptible to environments remain obstacles for the use of device materials. Here, we demonstrate remarkable improvement in the electrical characteristics of single-layer WS2 field-effect transistor (SL-WS2 FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN). SL-WS2 FET sandwiched between CVD-grown h-BN films shows unprecedented high mobility of 214 cm(2)/Vs at room temperature. The mobility of a SL-WS2 FET has been found to be 486 cm(2)/Vs at 5 K. The ON/OFF ratio of output current is ~10(7) at room temperature. Apart from an ideal substrate for WS2 FET, CVD-grown h-BN film also provides a protection layer against unwanted influence by gas environments. The h-BN/SL-WS2/h-BN sandwich structure offers a way to develop high-quality durable single-layer TMDCs electronic devices. PMID:26030008

  9. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-01

    The Al2O3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H2O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D2O instead of H2O in the ALD and found that the Al2O3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH3 groups than the high-temperature film. This CH3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H2O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H2O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D2O-oxidant ALD but found that the mass density and dielectric constant of D2O-grown Al2O3 films are smaller than those of H2O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al2O3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD technologies in general.

  10. Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Fujii, Tetsuo; Yoshii, Naoki; Masuda, Rui; Tanabe, Tetsuhiro; Kamisawa, Akira; Hosaka, Shigetoshi; Kumagai, Yoshinao; Koukitu, Akinori

    2009-02-01

    The effects of growth conditions for ZnO layers grown by halide vapor phase epitaxy (HVPE) on (0 0 0 1) ZnO/sapphire templates are investigated. Micron-sized pyramidal ZnO islands nucleate on the template at the initial growth stage and each island grows differently with the process conditions. The high temperature of 1000 °C promotes a lateral growth rate and coalescence between the islands. The full-width at half-maximums (FWHMs) of X-ray rocking curves for the (0 0 0 2) and (1 0 1¯ 1) planes from a fully coalesced ZnO layer are quite narrow values below 160 arcsec. Transmission electron microscopy (TEM) reveals that screw character dislocations in the template do not propagate into the HVPE-grown layer.

  11. Stability domain of alumina thermally grown on Fe-Cr-Al-based model alloys and modified surface layers exposed to oxygen-containing molten Pb

    NASA Astrophysics Data System (ADS)

    Jianu, A.; Fetzer, R.; Weisenburger, A.; Doyle, S.; Bruns, M.; Heinzel, A.; Hosemann, P.; Mueller, G.

    2016-03-01

    The paper gives experimental results concerning the morphology, composition, structure and thickness of the oxide scales grown on Fe-Cr-Al-based bulk alloys during exposure to oxygen-containing molten lead. The results are discussed and compared with former results obtained on Al-containing surface layers, modified by melting with intense pulsed electron beam and exposed to similar conditions. The present and previous results provide the alumina stability domain and also the criterion of the Al/Cr ratio for the formation of a highly protective alumina layer on the surface of Fe-Cr-Al-based alloys and on modified surface layers exposed to molten lead with 10-6 wt.% oxygen at 400-600 °C. The protective oxide scales, grown on alumina-forming Fe-Cr-Al alloys under the given experimental conditions, were transient aluminas, namely, kappa-Al2O3 and theta-Al2O3.

  12. UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

    2016-08-01

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent

  13. Dynamics of active layer in wooded palsas of northern Quebec

    NASA Astrophysics Data System (ADS)

    Jean, Mélanie; Payette, Serge

    2014-02-01

    Palsas are organic or mineral soil mounds having a permafrost core. Palsas are widespread in the circumpolar discontinuous permafrost zone. The annual dynamics and evolution of the active layer, which is the uppermost layer over the permafrost table and subjected to the annual freeze-thaw cycle, are influenced by organic layer thickness, snow depth, vegetation type, topography and exposure. This study examines the influence of vegetation types, with an emphasis on forest cover, on active layer dynamics of palsas in the Boniface River watershed (57°45‧ N, 76°00‧ W). In this area, palsas are often colonized by black spruce trees (Picea mariana (Mill.) B.S.P.). Thaw depth and active layer thickness were monitored on 11 wooded or non-wooded mineral and organic palsas in 2009, 2010 and 2011. Snow depth, organic layer thickness, and vegetation types were assessed. The mapping of a palsa covered by various vegetation types and a large range of organic layer thickness were used to identify the factors influencing the spatial patterns of thaw depth and active layer. The active layer was thinner and the thaw rate slower in wooded palsas, whereas it was the opposite in more exposed sites such as forest openings, shrubs and bare ground. Thicker organic layers were associated with thinner active layers and slower thaw rates. Snow depth was not an important factor influencing active layer dynamics. The topography of the mapped palsa was uneven, and the environmental factors such as organic layer, snow depth, and vegetation types were heterogeneously distributed. These factors explain a part of the spatial variation of the active layer. Over the 3-year long study, the area of one studied palsa decreased by 70%. In a context of widespread permafrost decay, increasing our understanding of factors that influence the dynamics of wooded and non-wooded palsas and understanding of the role of vegetation cover will help to define the response of discontinuous permafrost landforms

  14. Screening the antiangiogenic activity of medicinal plants grown and sold in Jordan.

    PubMed

    Zihlif, Malek; Afifi, Fatma; Muhtaseb, Ruba; Al-Khatib, Sondos; Abaza, Ismail; Naffa, Randa

    2012-02-01

    Angiogenesis is essential for the growth, invasion, and metastasis of most solid tumors and has become a valuable pharmacological target for cancer prevention and treatment. This study was performed to assess the antiangiogenic activity of 31 medicinal plants grown and sold in Jordan. The antiangiogenic activity was assessed using the rat aortic ring assay. Out of 31 extracts, 15 extracts showed more than 50 % inhibition of the blood vessels outgrowth from the primary tissue explants (p = 0.000). Three of these 15 extracts showed a potential cytotoxic effect on normal fibroblast cells. Four extracts shared antiangiogenic and antiproliferative activity towards MCF7 breast cancer cell lines. Eight extracts demonstrated selective antiangiogenic activity. This is the first report demonstrating the potential antiangiogenic activity of Artemisia judaica, Aloysia citriodora, Salvia egyptiaca, and Calendula arvensis. Some extracts with antiangiogenic activity exhibited selectivity against the endothelial cells proliferation, demonstrating a direct inhibitory activity against the key step in tumor angiogenesis. PMID:22174075

  15. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.

    PubMed

    Lin, Yu-Kai; Chen, Ruei-San; Chou, Tsu-Chin; Lee, Yi-Hsin; Chen, Yang-Fang; Chen, Kuei-Hsien; Chen, Li-Chyong

    2016-08-31

    The thickness-dependent surface states of MoS2 thin films grown by the chemical vapor deposition process on the SiO2-Si substrates are investigated by X-ray photoelectron spectroscopy. Raman and high-resolution transmission electron microscopy suggest the thicknesses of MoS2 films to be ranging from 3 to 10 layers. Both the core levels and valence band edges of MoS2 shift downward ∼0.2 eV as the film thickness increases, which can be ascribed to the Fermi level variations resulting from the surface states and bulk defects. Grainy features observed from the atomic force microscopy topographies, and sulfur-vacancy-induced defect states illustrated at the valence band spectra imply the generation of surface states that causes the downward band bending at the n-type MoS2 surface. Bulk defects in thick MoS2 may also influence the Fermi level oppositely compared to the surface states. When Au contacts with our MoS2 thin films, the Fermi level downshifts and the binding energy reduces due to the hole-doping characteristics of Au and easy charge transfer from the surface defect sites of MoS2. The shift of the onset potentials in hydrogen evolution reaction and the evolution of charge-transfer resistances extracted from the impedance measurement also indicate the Fermi level varies with MoS2 film thickness. The tunable Fermi level and the high chemical stability make our MoS2 a potential catalyst. The observed thickness-dependent properties can also be applied to other transition-metal dichalcogenides (TMDs), and facilitates the development in the low-dimensional electronic devices and catalysts. PMID:27488185

  16. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.

    PubMed

    Lin, Yu-Kai; Chen, Ruei-San; Chou, Tsu-Chin; Lee, Yi-Hsin; Chen, Yang-Fang; Chen, Kuei-Hsien; Chen, Li-Chyong

    2016-08-31

    The thickness-dependent surface states of MoS2 thin films grown by the chemical vapor deposition process on the SiO2-Si substrates are investigated by X-ray photoelectron spectroscopy. Raman and high-resolution transmission electron microscopy suggest the thicknesses of MoS2 films to be ranging from 3 to 10 layers. Both the core levels and valence band edges of MoS2 shift downward ∼0.2 eV as the film thickness increases, which can be ascribed to the Fermi level variations resulting from the surface states and bulk defects. Grainy features observed from the atomic force microscopy topographies, and sulfur-vacancy-induced defect states illustrated at the valence band spectra imply the generation of surface states that causes the downward band bending at the n-type MoS2 surface. Bulk defects in thick MoS2 may also influence the Fermi level oppositely compared to the surface states. When Au contacts with our MoS2 thin films, the Fermi level downshifts and the binding energy reduces due to the hole-doping characteristics of Au and easy charge transfer from the surface defect sites of MoS2. The shift of the onset potentials in hydrogen evolution reaction and the evolution of charge-transfer resistances extracted from the impedance measurement also indicate the Fermi level varies with MoS2 film thickness. The tunable Fermi level and the high chemical stability make our MoS2 a potential catalyst. The observed thickness-dependent properties can also be applied to other transition-metal dichalcogenides (TMDs), and facilitates the development in the low-dimensional electronic devices and catalysts.

  17. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-10

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  18. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  19. Structural and optical properties of ZnO nanorods on Mg0.2Zn0.8O seed layers grown by hydrothermal method.

    PubMed

    Kim, Min Su; Kim, Do Yeob; Kim, Sung-O; Leem, Jae-Young

    2013-05-01

    ZnO nanorods were grown on the Mg0.2Zn0.8O seed layers with different thickness by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of the Mg0.2Zn0.8O seed layer thickness on the structural and the optical properties of the ZnO nanorods. The residual stress in the Mg0.2Zn0.8O seed layers was depended on the thickness while the texture coefficient of the Mg0.2Zn0.8O seed layers was not affected significantly. The smaller full width at half maximum (FWHM) of the ZnO (002) diffraction and near-band-edge emission (NBE) peak and the larger average grain size were observed from the ZnO nanorods grown on the Mg0.2Zn0.8O seed layers with 5 layers (thickness of 350 nm), which indicate the enhancement the structural and the optical properties of the ZnO nanorods.

  20. Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

    NASA Astrophysics Data System (ADS)

    Park, Hong Bae; Cho, Moonju; Park, Jaehoo; Lee, Suk Woo; Hwang, Cheol Seong; Kim, Jong-Pyo; Lee, Jong-Ho; Lee, Nae-In; Kang, Ho-Kyu; Lee, Jong-Cheol; Oh, Se-Jung

    2003-09-01

    HfO2 gate dielectric thin-films were deposited on Si wafers using an atomic-layer deposition (ALD) technique with HfCl4 and either H2O or O3 as the precursor and oxidant, respectively. Although the ALD reactions using either H2O or O3 were successfully confirmed at a deposition temperature of 300 °C, the structural and electrical properties of the HfO2 films grown using the two oxidants were quite different. The stronger oxidation power of the O3 compared to H2O increased the oxygen concentration in the HfO2 film and the rate of interfacial SiO2 formation even at the as-deposited state. Because of the larger oxygen concentration, the decrease in the capacitance density of the film grown with O3 after rapid thermal annealing at 750 °C under N2 atmosphere was slightly larger than that of the HfO2 film grown with H2O. Apart from this weakness, all the other electrical properties, including the fixed charge density, the interface trap density, the leakage current density and the hysteresis in the capacitance-voltage plot of the film grown with O3 were superior to those of the film grown with H2O. Therefore, O3 appears to be a better oxidant for the HfO2 film growth using the ALD method.

  1. High-performance hybrid supercapacitor with 3D hierarchical porous flower-like layered double hydroxide grown on nickel foam as binder-free electrode

    NASA Astrophysics Data System (ADS)

    Zhang, Luojiang; Hui, Kwun Nam; San Hui, Kwan; Lee, Haiwon

    2016-06-01

    The synthesis of layered double hydroxide (LDH) as electroactive material has been well reported; however, fabricating an LDH electrode with excellent electrochemical performance at high current density remains a challenge. In this paper, we report a 3D hierarchical porous flower-like NiAl-LDH grown on nickel foam (NF) through a liquid-phase deposition method as a high-performance binder-free electrode for energy storage. With large ion-accessible surface area as well as efficient electron and ion transport pathways, the prepared LDH-NF electrode achieves high specific capacity (1250 C g-1 at 2 A g-1 and 401 C g-1 at 50 A g-1) after 5000 cycles of activation at 20 A g-1 and high cycling stability (76.7% retention after another 5000 cycles at 50 A g-1), which is higher than those of most previously reported NiAl-LDH-based materials. Moreover, a hybrid supercapacitor with LDH-NF as the positive electrode and porous graphene nanosheet coated on NF (GNS-NF) as the negative electrode, delivers high energy density (30.2 Wh kg-1 at a power density of 800 W kg-1) and long cycle life, which outperforms the other devices reported in the literature. This study shows that the prepared LDH-NF electrode offers great potential in energy storage device applications.

  2. Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.J.; Charache, G.; Freeman, M.

    1998-06-01

    N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.

  3. Contribution of Sp1 to Telomerase Expression and Activity in Skin Keratinocytes Cultured With a Feeder Layer.

    PubMed

    Bisson, Francis; Paquet, Claudie; Bourget, Jean-Michel; Zaniolo, Karine; Rochette, Patrick J; Landreville, Solange; Damour, Odile; Boudreau, François; Auger, François A; Guérin, Sylvain L; Germain, Lucie

    2015-02-01

    The growth of primary keratinocytes is improved by culturing them with a feeder layer. The aim of this study was to assess whether the feeder layer increases the lifespan of cultured epithelial cells by maintaining or improving telomerase activity and expression. The addition of an irradiated fibroblast feeder layer of either human or mouse origin (i3T3) helped maintain telomerase activity as well as expression of the transcription factor Sp1 in cultured keratinocytes. In contrast, senescence occurred earlier, together with a reduction of Sp1 expression and telomerase activity, in keratinocytes cultured without a feeder layer. Telomerase activity was consistently higher in keratinocytes grown on the three different feeder layers tested relative to cells grown without them. Suppression of Sp1 expression by RNA inhibition (RNAi) reduced both telomerase expression and activity in keratinocytes and also abolished their long-term growth capacity suggesting that Sp1 is a key regulator of both telomerase gene expression and cell cycle progression of primary cultured human skin keratinocytes. The results of the present study therefore suggest that the beneficial influence of the feeder layer relies on its ability to preserve telomerase activity in cultured human keratinocytes through the maintenance of stable levels of Sp1 expression.

  4. Contribution of Sp1 to Telomerase Expression and Activity in Skin Keratinocytes Cultured With a Feeder Layer.

    PubMed

    Bisson, Francis; Paquet, Claudie; Bourget, Jean-Michel; Zaniolo, Karine; Rochette, Patrick J; Landreville, Solange; Damour, Odile; Boudreau, François; Auger, François A; Guérin, Sylvain L; Germain, Lucie

    2015-02-01

    The growth of primary keratinocytes is improved by culturing them with a feeder layer. The aim of this study was to assess whether the feeder layer increases the lifespan of cultured epithelial cells by maintaining or improving telomerase activity and expression. The addition of an irradiated fibroblast feeder layer of either human or mouse origin (i3T3) helped maintain telomerase activity as well as expression of the transcription factor Sp1 in cultured keratinocytes. In contrast, senescence occurred earlier, together with a reduction of Sp1 expression and telomerase activity, in keratinocytes cultured without a feeder layer. Telomerase activity was consistently higher in keratinocytes grown on the three different feeder layers tested relative to cells grown without them. Suppression of Sp1 expression by RNA inhibition (RNAi) reduced both telomerase expression and activity in keratinocytes and also abolished their long-term growth capacity suggesting that Sp1 is a key regulator of both telomerase gene expression and cell cycle progression of primary cultured human skin keratinocytes. The results of the present study therefore suggest that the beneficial influence of the feeder layer relies on its ability to preserve telomerase activity in cultured human keratinocytes through the maintenance of stable levels of Sp1 expression. PMID:24962522

  5. Thin-Layer Chromatography: Four Simple Activities for Undergraduate Students.

    ERIC Educational Resources Information Center

    Anwar, Jamil; And Others

    1996-01-01

    Presents activities that can be used to introduce thin-layer chromatography at the undergraduate level in relatively less developed countries and that can be performed with very simple and commonly available apparati in high schools and colleges. Activities include thin-layer chromatography with a test-tube, capillary feeder, burette, and rotating…

  6. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rancour, D. P.; Melloch, M. R.; Pierret, R. F.; Lundstrom, M. S.; Klausmeier-Brown, M. E.; Kyono, C. S.

    1987-08-01

    n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

  7. Sporadic E-Layers and Meteor Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid

    2016-07-01

    In average width it is difficult to explain variety of particularities of the behavior sporadic layer Es ionospheres without attraction long-lived metallic ion of the meteoric origin. Mass spectrometric measurements of ion composition using rockets indicate the presence of metal ions Fe+, Mg+, Si+, Na+, Ca+, K+, Al+ and others in the E-region of the ionosphere. The most common are the ions Fe+, Mg+, Si+, which are primarily concentrated in the narrow sporadic layers of the ionosphere at altitudes of 90-130 km. The entry of meteoric matter into the Earth's atmosphere is a source of meteor atoms (M) and ions (M +) that later, together with wind shear, produce midlatitude sporadic Es layer of the ionosphere. To establish the link between sporadic Es layer and meteoroid streams, we proceeded from the dependence of the ionization coefficient of meteors b on the velocity of meteor particles in different meteoroid streams. We investigated the dependence of the critical frequency f0Es of sporadic E on the particle velocity V of meteor streams and associations. It was established that the average values of f0Es are directly proportional to the velocity V of meteor streams and associations, with the correlation coefficient of 0.53 < R < 0.74. Thus, the critical frequency of the sporadic layer Es increases with the increase of particle velocity V in meteor streams, which indicates the direct influence of meteor particles on ionization of the lower ionosphere and formation of long-lived metal atoms M and ions M+ of meteoric origin.

  8. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Bobrov, A. I.; Daniltsev, V. M.; Novikov, A. V.; Pavlov, D. A.; Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A.

    2015-11-15

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

  9. Light-induced gradual activation of photosystem II in dark-grown Norway spruce seedlings.

    PubMed

    Pavlovič, Andrej; Stolárik, Tibor; Nosek, Lukáš; Kouřil, Roman; Ilík, Petr

    2016-06-01

    Gymnosperms, unlike angiosperms, are able to synthesize chlorophyll and form photosystems in complete darkness. Photosystem I (PSI) formed under such conditions is fully active, but photosystem II (PSII) is present in its latent form with inactive oxygen evolving complex (OEC). In this work we have studied light-induced gradual changes in PSII function in dark-grown cotyledons of Norway spruce (Picea abies) via the measurement of chlorophyll a fluorescence rise, absorption changes at 830 nm, thermoluminescence glow curves (TL) and protein analysis. The results indicate that in dark-grown cotyledons, alternative reductants were able to act as electron donors to PSII with inactive OEC. Illumination of cotyledons for 5 min led to partial activation of PSII, which was accompanied by detectable oxygen evolution, but still a substantial number of PSII centers remained in the so called PSII-Q(B)-non-reducing form. Interestingly, even 24 h long illumination was not sufficient for the full activation of PSII centers. This was evidenced by a weak attachment of PsbP protein and the absence of PsbQ protein in PSII particles, the absence of PSII supercomplexes, the suboptimal maximum yield of PSII photochemistry, the presence of C band in TL curve and also the presence of up-shifted Q band in TL in DCMU-treated cotyledons. This slow light-induced activation of PSII in dark-grown cotyledons could contribute to the prevention of PSII overexcitation before the light-induced increase in PSI/PSII ratio allows effective operation of linear electron flow. PMID:26901522

  10. Light-induced gradual activation of photosystem II in dark-grown Norway spruce seedlings.

    PubMed

    Pavlovič, Andrej; Stolárik, Tibor; Nosek, Lukáš; Kouřil, Roman; Ilík, Petr

    2016-06-01

    Gymnosperms, unlike angiosperms, are able to synthesize chlorophyll and form photosystems in complete darkness. Photosystem I (PSI) formed under such conditions is fully active, but photosystem II (PSII) is present in its latent form with inactive oxygen evolving complex (OEC). In this work we have studied light-induced gradual changes in PSII function in dark-grown cotyledons of Norway spruce (Picea abies) via the measurement of chlorophyll a fluorescence rise, absorption changes at 830 nm, thermoluminescence glow curves (TL) and protein analysis. The results indicate that in dark-grown cotyledons, alternative reductants were able to act as electron donors to PSII with inactive OEC. Illumination of cotyledons for 5 min led to partial activation of PSII, which was accompanied by detectable oxygen evolution, but still a substantial number of PSII centers remained in the so called PSII-Q(B)-non-reducing form. Interestingly, even 24 h long illumination was not sufficient for the full activation of PSII centers. This was evidenced by a weak attachment of PsbP protein and the absence of PsbQ protein in PSII particles, the absence of PSII supercomplexes, the suboptimal maximum yield of PSII photochemistry, the presence of C band in TL curve and also the presence of up-shifted Q band in TL in DCMU-treated cotyledons. This slow light-induced activation of PSII in dark-grown cotyledons could contribute to the prevention of PSII overexcitation before the light-induced increase in PSI/PSII ratio allows effective operation of linear electron flow.

  11. P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.J.; Charache, G.; Freeman, M.

    1998-06-01

    P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane and diethyltellurium (DETe) as the dopant precursors, respectively. Hall measurements show that the concentration and mobility of holes and electrons in GaSb and GA{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectrometry (SIMS) results show that the incorporation of Si and Te is higher when GaSb substrates are used. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.

  12. Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator.

    PubMed

    Lu, Zhixing; Sun, Lifei; Xu, Guanchen; Zheng, Jingying; Zhang, Qi; Wang, Jingyi; Jiao, Liying

    2016-05-24

    Chemical vapor deposition (CVD) has shown great potential in synthesizing various high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, the nondestruction transfer of these CVD-grown 2D TMDCs at a high yield remains a key challenge for applying these emerging materials in various aspects. To address this challenge, we designed a water-soluble transfer mediator consisting of two polymers, polyvinylpyrrolidone (PVP) and poly(vinyl alcohol) (PVA), which can form strong interactions with CVD-grown 2D TMDCs for the nondestruction transfer of these materials. With this mediator, we realized the physical transfer of CVD-grown MoS2 flakes and several other 2D TMDCs, including 2D alloys and heterostructures to a wide range of substrates at a high yield of >90% with well-retained properties as evidenced by various microscopic, spectroscopic, and electrical measurements. Field-effect transistors (FETs) made on thus-transferred CVD-grown MoS2 monolayers exhibited obviously higher mobility than those transferred by chemical method. We also constructed several artificial 2D crystals showing very strong interlayer coupling by the multiple transfer of CVD-grown 2D TMDCs monolayers with this approach. This transfer approach will make versatile CVD-grown 2D materials and their artificial stacks with pristine qualities easily accessible for both fundamental studies and practical applications. PMID:27158832

  13. Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator.

    PubMed

    Lu, Zhixing; Sun, Lifei; Xu, Guanchen; Zheng, Jingying; Zhang, Qi; Wang, Jingyi; Jiao, Liying

    2016-05-24

    Chemical vapor deposition (CVD) has shown great potential in synthesizing various high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, the nondestruction transfer of these CVD-grown 2D TMDCs at a high yield remains a key challenge for applying these emerging materials in various aspects. To address this challenge, we designed a water-soluble transfer mediator consisting of two polymers, polyvinylpyrrolidone (PVP) and poly(vinyl alcohol) (PVA), which can form strong interactions with CVD-grown 2D TMDCs for the nondestruction transfer of these materials. With this mediator, we realized the physical transfer of CVD-grown MoS2 flakes and several other 2D TMDCs, including 2D alloys and heterostructures to a wide range of substrates at a high yield of >90% with well-retained properties as evidenced by various microscopic, spectroscopic, and electrical measurements. Field-effect transistors (FETs) made on thus-transferred CVD-grown MoS2 monolayers exhibited obviously higher mobility than those transferred by chemical method. We also constructed several artificial 2D crystals showing very strong interlayer coupling by the multiple transfer of CVD-grown 2D TMDCs monolayers with this approach. This transfer approach will make versatile CVD-grown 2D materials and their artificial stacks with pristine qualities easily accessible for both fundamental studies and practical applications.

  14. Layer-by-layer evolution of structure, strain, and activity for the oxygen evolution reaction in graphene-templated Pt monolayers.

    PubMed

    Abdelhafiz, Ali; Vitale, Adam; Joiner, Corey; Vogel, Eric; Alamgir, Faisal M

    2015-03-25

    In this study, we explore the dimensional aspect of structure-driven surface properties of metal monolayers grown on a graphene/Au template. Here, surface limited redox replacement (SLRR) is used to provide precise layer-by-layer growth of Pt monolayers on graphene. We find that after a few iterations of SLRR, fully wetted 4-5 monolayer Pt films can be grown on graphene. Incorporating graphene at the Pt-Au interface modifies the growth mechanism, charge transfers, equilibrium interatomic distances, and associated strain of the synthesized Pt monolayers. We find that a single layer of sandwiched graphene is able to induce a 3.5% compressive strain on the Pt adlayer grown on it, and as a result, catalytic activity is increased due to a greater areal density of the Pt layers beyond face-centered-cubic close packing. At the same time, the sandwiched graphene does not obstruct vicinity effects of near-surface electron exchange between the substrate Au and adlayers Pt. X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) techniques are used to examine charge mediation across the Pt-graphene-Au junction and the local atomic arrangement as a function of the Pt adlayer dimension. Cyclic voltammetry (CV) and the oxygen reduction reaction (ORR) are used as probes to examine the electrochemically active area of Pt monolayers and catalyst activity, respectively. Results show that the inserted graphene monolayer results in increased activity for the Pt due to a graphene-induced compressive strain, as well as a higher resistance against loss of the catalytically active Pt surface.

  15. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

    2016-10-01

    The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm‑2 · eV‑1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process.

  16. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

    PubMed Central

    Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

    2016-01-01

    The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm−2 · eV−1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process. PMID:27721493

  17. Active unjamming of confluent cell layers

    NASA Astrophysics Data System (ADS)

    Marchetti, M. Cristina

    Cell motion inside dense tissues governs many biological processes, including embryonic development and cancer metastasis, and recent experiments suggest that these tissues exhibit collective glassy behavior. Motivated by these observations, we have studied a model of dense tissues that combines self-propelled particle models and vertex models of confluent cell layers. In this model, referred to as self-propelled Voronoi (SPV), cells are described as polygons in a Voronoi tessellation with directed noisy cell motility and interactions governed by a shape energy that incorporates the effects of cell volume incompressibility, contractility and cell-cell adhesion. Using this model, we have demonstrated a new density-independent solid-liquid transition in confluent tissues controlled by cell motility and a cell-shape parameter measuring the interplay of cortical tension and cell-cell adhesion. An important insight of this work is that the rigidity and dynamics of cell layers depends sensitively on cell shape. We have also used the SPV model to test a new method developed by our group to determine cellular forces and tissue stresses from experimentally accessible cell shapes and traction forces, hence providing the spatio-temporal distribution of stresses in motile dense tissues. This work was done with Dapeng Bi, Lisa Manning and Xingbo Yang. MCM was supported by NSF-DMR-1305184 and by the Simons Foundation.

  18. Chemical composition and biological activities of the essential oil from Anredera cordifolia grown in Brazil.

    PubMed

    Souza, Lucéia Fátima; de Barros, Ingrid Bergman Inchausti; Mancini, Emilia; De Martino, Laura; Scandolera, Elia; De Feo, Vincenzo

    2014-07-01

    The chemical composition of the essential oil of Anredera cordifolia (Ten.) Steenis (Basellaceae), grown in Brazil, was studied by means of GC and GC-MS analysis. In all, 19 compounds were identified, accounting for 91.6% of the total oil; hydrocarbons were the main constituents (67.7%). The essential oil was evaluated for its in vitro potential phytotoxic activity against germination and initial radicle growth of Raphanus sativus L., Sinapis arvensis L., and Phalaris canariensis L. seeds. At 1.25 microg/mL and 0.625 microg/mL, the oil significantly promoted the germination of S. arvensis. Moreover, the antimicrobial activity of the essential oil was assayed against ten bacterial strains. The essential oil showed a weak inhibitory activity against the Gram-positive pathogens. PMID:25230514

  19. Chemical composition and biological activities of the essential oils from two Pereskia species grown in Brazil.

    PubMed

    Souza, Lucéia Fatima; De Barros, Ingrid Bergman Inchausti; Mancini, Emilia; De Martino, Laura; Scandolera, Elia; De Feo, Vincenzo

    2014-12-01

    The chemical composition of the essential oils of Pereskia aculeata Mill. and P. grandifolia Haw. (Cactaceae), grown in Brazil, was studied by means of GC and GC-MS. In all, 37 compounds were identified, 30 for P. aculeata and 15 for P. grandifolia. Oxygenated diterpenes are the main constituents, both in the oil ofP. grandifolia (55.5%) and in that ofP. aculeata (29.4%). The essential oils were evaluated for their in vitro phytotoxic activity against germination and initial radicle growth of Raphanus sativus L., Sinapis arvensis L., and Phalaris canariensis L. seeds. The essential oil of P. grandifolia, at all doses tested, significantly inhibited the radicle elongation of R. sativus. Moreover, the antimicrobial activity of the essential oils was assayed against ten bacterial strains. The essential oils showed weak inhibitory activity against the Gram-positive pathogens. PMID:25632490

  20. Chemical composition and biological activities of the essential oils from two Pereskia species grown in Brazil.

    PubMed

    Souza, Lucéia Fatima; De Barros, Ingrid Bergman Inchausti; Mancini, Emilia; De Martino, Laura; Scandolera, Elia; De Feo, Vincenzo

    2014-12-01

    The chemical composition of the essential oils of Pereskia aculeata Mill. and P. grandifolia Haw. (Cactaceae), grown in Brazil, was studied by means of GC and GC-MS. In all, 37 compounds were identified, 30 for P. aculeata and 15 for P. grandifolia. Oxygenated diterpenes are the main constituents, both in the oil ofP. grandifolia (55.5%) and in that ofP. aculeata (29.4%). The essential oils were evaluated for their in vitro phytotoxic activity against germination and initial radicle growth of Raphanus sativus L., Sinapis arvensis L., and Phalaris canariensis L. seeds. The essential oil of P. grandifolia, at all doses tested, significantly inhibited the radicle elongation of R. sativus. Moreover, the antimicrobial activity of the essential oils was assayed against ten bacterial strains. The essential oils showed weak inhibitory activity against the Gram-positive pathogens.

  1. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

    DOE PAGES

    Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi -Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I.

    2016-09-21

    Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 108 cm–2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (fT) of 8.9 GHz and a maximum frequency of oscillation (fmax) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

  2. Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films

    PubMed Central

    Choi, Won Jin; Jung, Jongjin; Lee, Sujin; Chung, Yoon Jang; Yang, Cheol-Soo; Lee, Young Kuk; Lee, You-Seop; Park, Joung Kyu; Ko, Hyuk Wan; Lee, Jeong-O

    2015-01-01

    We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity. PMID:25897486

  3. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

    NASA Astrophysics Data System (ADS)

    Lu, Jing; DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi; Zhang, Yong-Hang; Kovacs, Andras; Dunin-Borkowski, Rafal E.; Smith, David J.

    2016-04-01

    A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

  4. Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films.

    PubMed

    Choi, Won Jin; Jung, Jongjin; Lee, Sujin; Chung, Yoon Jang; Yang, Cheol-Soo; Lee, Young Kuk; Lee, You-Seop; Park, Joung Kyu; Ko, Hyuk Wan; Lee, Jeong-O

    2015-04-21

    We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity.

  5. Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

    NASA Astrophysics Data System (ADS)

    Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

    2013-06-01

    By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

  6. Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

    NASA Astrophysics Data System (ADS)

    Gómez, V. J.; Gačević, Ž.; Soto-Rodríguez, P. E. D.; Aseev, P.; Nötzel, R.; Calleja, E.; Sánchez-García, M. A.

    2016-08-01

    This work presents a comparative study, based mainly on X-ray diffraction analysis, of compact (~100 nm thick) and uniform single crystal InGaN layers (In content <35%) grown by plasma-assisted molecular beam epitaxy. InGaN layers have been grown directly on Si(111) substrates and on commercially available GaN(0001)-on-sapphire templates.. A high reactivity of atomic N with Si leads to a formation of amorphous SiN on Si substrate, i.e. an indirect crystal-to-crystal InGaN/SiN/Si contact; the weak InGaN interaction with the underlying substrate (weak epitaxial constraint) further leads to poor surface "wetting" and consequent 3D nucleation. The InGaN growth on GaN is, on the other hand, characterized by a direct crystal-to-crystal InGaN/GaN contact; the strong InGaN interaction with the underlying substrate (strong epitaxial constraint) leads to good surface "wetting" and consequent 2D nucleation. All studied InGaN layers show single epitaxial relationship to both Si(111) and GaN(0001)-on-sapphire substrates as well as a relatively good compositional uniformity (no trace of InGaN phase separation). However, layers grown on Si show significantly lower strain and inferior crystallographic uniformity i.e. higher disorder in crystallographic tilt and twist. The surface "wetting" (poor vs. good) and epitaxial constraint (weak vs. strong) are suggested as the main origins of these discrepancies.

  7. High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

    SciTech Connect

    Zhylik, A.; Benediktovich, A.; Ulyanenkov, A.; Guerault, H.; Myronov, M.; Dobbie, A.; Leadley, D. R.; Ulyanenkova, T.

    2011-06-15

    This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si{sub 1-x}Ge{sub x} heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.

  8. Active layer thermal monitoring at Fildes Peninsula, King George Island, Maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. N. B.; Francelino M., R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-07-01

    International attention to the climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of the this paper is to present active layer temperature data for one CALM-S site located at Fildes Peninsula, King George Island, Maritime Antarctica over an fifth seven month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ± 0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a~high capacity data logger. A series of statistical analysis were performed to describe the soil temperature time series, including a linear fit in order to identify global trend and a series of autoregressive integrated moving average (ARIMA) models were tested in order to define the best fit for the data. The controls of weather on the thermal regime of the active layer have been identified, providing insights about the influence of climate chance over the permafrost. The active layer thermal regime in the studied period was typical of periglacial environment, with extreme variation at the surface during summer resulting in frequent freeze and thaw cycles. The active layer thickness (ALT) over the studied period showed variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model was considered appropriate to treat the dataset, enabling more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and active layer thickness over the studied period, no warming trend was detected.

  9. Active-layer thermal monitoring on the Fildes Peninsula, King George Island, maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. M. B.; Francelino, M. R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-12-01

    International attention to climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of this paper is to present active-layer temperature data for one Circumpolar Active Layer Monitoring South hemisphere (CALM-S) site located on the Fildes Peninsula, King George Island, maritime Antarctica over an 57-month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ±0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a high-capacity data logger. A series of statistical analyses was performed to describe the soil temperature time series, including a linear fit in order to identify global trends, and a series of autoregressive integrated moving average (ARIMA) models was tested in order to define the best fit for the data. The affects of weather on the thermal regime of the active layer have been identified, providing insights into the influence of climate change on permafrost. The active-layer thermal regime in the studied period was typical of periglacial environments, with extreme variation in surface during the summer resulting in frequent freeze and thaw cycles. The active-layer thickness (ALT) over the studied period shows a degree of variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model could describe the data adequately and is an important tool for more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and ACT over the studied period, no trend can be identified.

  10. Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer Stability.

    PubMed

    Bag, Monojit; Renna, Lawrence A; Adhikari, Ramesh Y; Karak, Supravat; Liu, Feng; Lahti, Paul M; Russell, Thomas P; Tuominen, Mark T; Venkataraman, D

    2015-10-14

    Solar cells fabricated using alkyl ammonium metal halides as light absorbers have the right combination of high power conversion efficiency and ease of fabrication to realize inexpensive but efficient thin film solar cells. However, they degrade under prolonged exposure to sunlight. Herein, we show that this degradation is quasi-reversible, and that it can be greatly lessened by simple modifications of the solar cell operating conditions. We studied perovskite devices using electrochemical impedance spectroscopy (EIS) with methylammonium (MA)-, formamidinium (FA)-, and MA(x)FA(1-x) lead triiodide as active layers. From variable temperature EIS studies, we found that the diffusion coefficient using MA ions was greater than when using FA ions. Structural studies using powder X-ray diffraction (PXRD) show that for MAPbI3 a structural change and lattice expansion occurs at device operating temperatures. On the basis of EIS and PXRD studies, we postulate that in MAPbI3 the predominant mechanism of accelerated device degradation under sunlight involves thermally activated fast ion transport coupled with a lattice-expanding phase transition, both of which are facilitated by absorption of the infrared component of the solar spectrum. Using these findings, we show that the devices show greatly improved operation lifetimes and stability under white-light emitting diodes, or under a solar simulator with an infrared cutoff filter or with cooling. PMID:26414066

  11. Pinning properties of Y211 added cold top-seeded YBCO grown on Y2O3 layer

    NASA Astrophysics Data System (ADS)

    Çakır, Bakiye; Duman, Şeyda; Aydıner, Alev

    2016-04-01

    In this study, samples having different composition were prepared with the cold top seeding-melt-growth (TSMG) process by using Nd123 seed. Y2O3 buffer layer was placed to bottom of the pellets consist of Y123: Y211 powder mixtures. Two samples were fabricated in stoichiometric ratios of 1:0 and 1:0.4 labeled as Y0 and Y40, respectively. The Tc onset values of Y0 and Y40 were found to be 93.4 and 93.6 K at 0 T, respectively. The dependence of the effective activation energy U of the flux pinning on the magnetic field and temperature of the sample were determined using the Arrhenius activation energy law from the resistivity curves. The magnetization measurements were performed using a vibrating sample magnetometer (VSM) at 30, 50 and 77 K. The critical current densities (J c) for Y0 and Y40 samples were determined to be 5.1×103 and 3.7×103 A/cm2 at 77 K in 0 T, respectively. The normalized pinning force density versus the reduced field was examined at different temperatures to determine the pinning mechanism.

  12. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    SciTech Connect

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  13. Physical activity in patients with grown-up congenital heart defects after comprehensive cardiac rehabilitation

    PubMed Central

    Haponiuk, Ireneusz; Jaworski, Radosław; Chojnicki, Maciej; Szalewska, Dominika; Leszczyńska, Katarzyna; Bakuła, Stanisław

    2014-01-01

    Introduction The group of grown-up patients with congenital heart defects (grown-up congenital heart – GUCH) complains of a number of specific medical and non-medical problems. The presented program of comprehensive cardiac rehabilitation (CCR-GUCH), dedicated to the above mentioned group, can potentially improve the physical activity of GUCH patients. Aim The aim of the study was to assess the effect of the comprehensive cardiac rehabilitation program on the physical activity of GUCH patients. Material and methods The invitation to take part in the CCR-GUCH program was addressed to a group of 57 patients (mean age: 23.7 ± 4.1 years) who had undergone the surgical correction of ventricular septal defects (VSD) or atrial septal defects (ASD) at least 12 months earlier. The patients were divided into two groups: A – patients undergoing rehabilitation, and B – patients who did not participate in the program. The patients were initially examined using functional and stress tests, and the program of comprehensive cardiac rehabilitation was started in group A. After 30 days, the patients from both groups underwent further testing using the same methods as during the initial evaluation. Results After one month of rehabilitation, the physical activity parameters of patients participating in the CCR-GUCH program (group A) were significantly better than those observed among non-participants (group B). Conclusions The introduction of the comprehensive rehabilitation program improves the physical activity and, consequently, the quality of life of GUCH patients. The CCR-GUCH program appears to be a justified supplement to holistic care in the late rehabilitation of patients after the surgical correction of congenital heart defects. PMID:26336469

  14. Activity recognition from video using layered approach

    NASA Astrophysics Data System (ADS)

    McPherson, Charles A.; Irvine, John M.; Young, Mon; Stefanidis, Anthony

    2012-01-01

    The adversary in current threat situations can no longer be identified by what they are, but by what they are doing. This has lead to a large increase in the use of video surveillance systems for security and defense applications. With the quantity of video surveillance at the disposal of organizations responsible for protecting military and civilian lives comes issues regarding the storage and screening the data for events and activities of interest. Activity recognition from video for such applications seeks to develop automated screening of video based upon the recognition of activities of interest rather than merely the presence of specific persons or vehicle classes developed for the Cold War problem of "Find the T72 Tank". This paper explores numerous approaches to activity recognition, all of which examine heuristic, semantic, and syntactic methods based upon tokens derived from the video. The proposed architecture discussed herein uses a multi-level approach that divides the problem into three or more tiers of recognition, each employing different techniques according to their appropriateness to strengths at each tier using heuristics, syntactic recognition, and HMM's of token strings to form higher level interpretations.

  15. Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

    SciTech Connect

    Zhu, Shang-Bin; Lu, Hong-Liang Zhang, Yuan; Sun, Qing-Qing; Zhou, Peng; Ding, Shi-Jin; Zhang, David Wei; Zhang, Qiu-Xiang

    2015-01-15

    The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show that the crystallinity of polycrystalline ZnO layer is enhanced by amorphous AlN capping layer. Compared with ZnO thin film, ZnO/AlN bilayer with 10.7 nm AlN capping layer exhibits three times enhanced near band edge (NBE) emission from the photoluminescence measurements. In addition, the near band edge emission from the ZnO can be further increased by ∼10 times through rapid thermal annealing at 600 °C. The underlying mechanisms for the enhancement of the NBE emission after coating AlN capping layer and thermal treatment are discussed. These results suggest that coating of a thin AlN layer and sequential thermal treatments can effectively tailor the luminescence properties of ZnO film.

  16. Mesoporous layer-by-layer ordered nanohybrids of layered double hydroxide and layered metal oxide: highly active visible light photocatalysts with improved chemical stability.

    PubMed

    Gunjakar, Jayavant L; Kim, Tae Woo; Kim, Hyo Na; Kim, In Young; Hwang, Seong-Ju

    2011-09-28

    Mesoporous layer-by-layer ordered nanohybrids highly active for visible light-induced O(2) generation are synthesized by self-assembly between oppositely charged 2D nanosheets of Zn-Cr-layered double hydroxide (Zn-Cr-LDH) and layered titanium oxide. The layer-by-layer ordering of two kinds of 2D nanosheets is evidenced by powder X-ray diffraction and cross-sectional high resolution-transmission electron microscopy. Upon the interstratification process, the original in-plane atomic arrangements and electronic structures of the component nanosheets remain intact. The obtained heterolayered nanohybrids show a strong absorption of visible light and a remarkably depressed photoluminescence signal, indicating an effective electronic coupling between the two component nanosheets. The self-assembly between 2D inorganic nanosheets leads to the formation of highly porous stacking structure, whose porosity is controllable by changing the ratio of layered titanate/Zn-Cr-LDH. The resultant heterolayered nanohybrids are fairly active for visible light-induced O(2) generation with a rate of ∼1.18 mmol h(-1) g(-1), which is higher than the O(2) production rate (∼0.67 mmol h(-1) g(-1)) by the pristine Zn-Cr-LDH material, that is, one of the most effective visible light photocatalysts for O(2) production, under the same experimental condition. This result highlights an excellent functionality of the Zn-Cr-LDH-layered titanate nanohybrids as efficient visible light active photocatalysts. Of prime interest is that the chemical stability of the Zn-Cr-LDH is significantly improved upon the hybridization, a result of the protection of the LDH lattice by highly stable titanate layer. The present findings clearly demonstrate that the layer-by-layer-ordered assembly between inorganic 2D nanosheets is quite effective not only in improving the photocatalytic activity of the component semiconductors but also in synthesizing novel porous LDH-based hybrid materials with improved chemical

  17. Sporadic Layer es and Siesmic Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid; Blokhin, Alexandr; Kalashnikova, Tatyana

    2016-07-01

    To determine the influence of seismogenic disturbances on the calm state of the iono-sphere and assess the impact of turbulence development in sporadic-E during earthquake prepa-ration period we calculated the variation in the range of semitransparency ∆fES = f0ES - fbES. The study was based primarily on the ionograms obtained by vertical sounding of the ionosphere at Dushanbe at nighttime station from 15 to 29 August 1986. In this time period four successive earthquakes took place, which serves the purpose of this study of the impact of seis-mogenic processes on the intensity of the continuous generation of ionospheric turbulence. Analysis of the results obtained for seismic-ionospheric effects of 1986 earthquakes at station Dushanbe has shown that disturbance of ionospheric parameters during earthquake prepa-ration period displays a pronounced maximum with a duration of t = 1-6 hours. Ionospheric effects associated with the processes of earthquake preparation emerge quite predictably, which verifies seismogenic disturbances in the ionosphere. During the preparation of strong earthquakes, ionograms of vertical sounding produced at station Dushanbe - near the epicenter area - often shown the phenomenon of spreading traces of sporadic Es. It is assumed that the duration of manifestation of seismic ionospheric precursors in Du-shanbe τ = 1 - 6 hours may be associated with deformation processes in the Earth's crust and var-ious faults, as well as dissimilar properties of the environment of the epicentral area. It has been shown that for earthquakes with 4.5 ≤ M ≤ 5.5 1-2 days prior to the event iono-spheric perturbations in the parameters of the sporadic layer Es and an increase in the value of the range of semitransparency Es - ΔfEs were observed, which could lead to turbulence at altitudes of 100-130 km.

  18. Investigation of the structural, electrical, and optical properties of MnAl2Se4 layers grown using the hot-wall deposition technique

    NASA Astrophysics Data System (ADS)

    You, S. H.; Hong, K. J.; Jeong, J. W.; Jeong, T. S.; Youn, C. J.; Moon, J. D.

    2016-08-01

    MnAl2Se4 layers were grown using the hot-wall deposition technique with an attached reservoir tail. Precise control of the vapor pressure in the reservoir was thought to play an important role in the grown of a stoichiometric layer. From the relation between the reciprocal temperature and the carrier concentration, we extracted the dominant trap level as 96.1 meV in the high-temperature region and 13.9 meV in the middle-temperature region. Thus, from a log-log plot between the mobility and the temperature, the mobility showed the different temperature-dependent decreases of the mobility at temperatures above 100 K: T -1/2 in the temperature range of 100 < T < 225 K and T -3/2 in the temperature of T > 225 K. The mobility decreased in proportion to T 1 in the low-temperature range of T < 100 K. By analyzing the optical absorption results, the bandgap variation matched E g ( T) = E g (0) - 3.19 × 10-3 T 2/( T + 488) well, where E g (0) is estimated to be 3.5616 eV. Consequently, low-temperature growth of MnAl2Se4 layers was achieved by using the hot-wall deposition technique.

  19. Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Kawano, Satoshi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2010-10-01

    We have investigated the structural and optical properties of semipolar r-plane GaN{1102} films grown on nearly-lattice-matched ZnO substrates with room-temperature (RT) epitaxial GaN buffer layers, putting special emphasis on the effect of surface treatment of the ZnO substrates. The full-width at half-maximum values of X-ray rocking curves for 1-µm-thick r-plane GaN layers grown at 700 °C on these RT-buffer layers, as measured using various X-ray incidence geometries, are in a range from 313 to 598 arcsec. Photoluminescence peaks attributable to structural defects in the r-plane GaN films have been shown to be reduced, and the near-band-edge emission has been enhanced by approximately 5 times by the use of atomically-flat r-plane ZnO substrates prepared by high-temperature annealing in air inside a box made of ZnO.

  20. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

    SciTech Connect

    Yakushev, M. V. Gutakovsky, A. K.; Sabinina, I. V.; Sidorov, Yu. G.

    2011-07-15

    Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

  1. ANTIOXIDANT ACTIVITY OF TISSUE CULTURE-RAISED BALLOTA NIGRA L. PLANTS GROWN EX VITRO.

    PubMed

    Makowczyńska, Joanna; Grzegorczyk-KAROLAK, Izabela; Wysokińska, Halina

    2015-01-01

    Antioxidant properties and total phenolic and flavonoid contents were evaluated in methanolic extracts of shoots from Ballota nigra plants initiated in vitro (from nodal explants) and in vivo (from seeds). The plants were grown in greenhouse and in the field, and were analyzed at the vegetative and flowering stages. The shoot extract of wild-grown plants of B. nigra was also investigated. The results indicate that antioxidant potential of the B. nigra extracts seems to be due to their scavenging of free radicals (DPPH assay) and metal reducing (FRAP test), while they were less effective at the prevention of linoleic acid peroxidation (LPO test). The extracts from shoots of in vitro derived plants were found to exhibit the greatest antioxidant properties. The extracts were also characterized by the highest content of phenolic compounds and their level was affected by plant developmental stage. The extracts of shoots collected at the flowering period exhibited higher amounts of phenolics and flavonoids than in the extracts of immature plants. A close correlation between the total phenolic content and flavonoid content and antioxidant activity using the DPPH and FRAP assays was obtained. The results of the present study suggest the use in vitro-derived plants of B. nigra instead of using wild plants for pharmaceutical purposes.

  2. Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al{sub 2}O{sub 3})

    SciTech Connect

    Gorham, Caroline S.; Gaskins, John T.; Hopkins, Patrick E.; Parsons, Gregory N.; Losego, Mark D.

    2014-06-23

    We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ∼35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.

  3. Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

    SciTech Connect

    Ku, Ching-Shun; Cheng, Ching-Yuan; Huang, Jheng-Ming; Lin, Chih-Ming; Lee, Hsin-Yi

    2010-11-01

    Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 deg. C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra.

  4. NaCl multi-layer islands grown on Au(111)-([Formula: see text]) probed by scanning tunneling microscopy.

    PubMed

    Sun, Xiaonan; Felicissimo, Marcella P; Rudolf, Petra; Silly, Fabien

    2008-12-10

    The growth of multi-layer NaCl islands on Au(111)-([Formula: see text]) surfaces was investigated using scanning tunneling microscopy (STM). We observed that the aspect of the NaCl islands drastically differs depending on the tunneling conditions. It is therefore possible to observe the layers forming an NaCl island or to image the gold reconstruction below the first NaCl layer. Atomically resolved STM images obtained on the first NaCl layer demonstrate that NaCl grows as an epitaxial crystalline film on Au(111)-([Formula: see text]). STM images also suggest that some NaCl layers can be non-crystalline. PMID:21730671

  5. Activation Layer Stabilization of High Polarization Photocathodes in Sub-Optimal RF Gun Environments

    SciTech Connect

    Gregory A. Mulhollan

    2010-11-16

    Specific activation recipes for bulk, 100 nm thick MBE grown and high polarization III-V photocathode material have been developed which mitigate the effects of exposure to background gasses. Lifetime data using four representative gasses were acquired for bulk GaAs, 100 nm unstrained GaAs and strained superlattice GaAs/GaAsP, all activated both with Cs and then Cs and Li (bi-alkali). Each photoemitter showed marked resilience improvement when activated using the bi-alkali recipe compared to the standard single alkali recipe. A dual alkali activation system at SLAC was constructed, baked and commissioned with the purpose of performing spin-polarization measurements on electrons emitted from the bi-alkali activated surfaces. An end station at SSRL was configured with the required sources for energy resolved photoemission measurements on the bi-alkali activated and CO2 dosed surfaces. The bi-alkali recipes were successfully implemented at SLAC/SSRL. Measurements at SLAC of the photoelectron spin-polarization from the modified activation surface showed no sign of a change in value compared to the standard activated material, i.e., no ill effects. Analysis of photoemission data indicates that the addition of Li to the activation layer results in a multi-layer structure. The presence of Li in the activation layer also acts as an inhibitor to CO2 absorption, hence better lifetimes in worse vacuum were achieved. The bi-alkali activation has been tested on O2 activated GaAs for comparison with NF3 activated surfaces. Comparable resilience to CO2 exposure was achieved for the O2 activated surface. An RF PECVD amorphous silicon growth system was modified to allow high temperature heat cleaning of GaAs substrates prior to film deposition. Growth versus thickness data were collected. Very thin amorphous silicon germanium layers were optimized to exhibit good behavior as an electron emitter. Growth of the amorphous silicon germanium films on the above substrates was fine tuned

  6. Isocitrate dehydrogenases and oxoglutarate dehydrogenase activities of baker's yeast grown in a variety of hypoxic conditions.

    PubMed

    Machado, A; Nuñez de Castro, I; Mayor, F

    1975-02-28

    The activities of isocitrate dehydrogenase (NAD), isocitrate dehydrogenase (NADP) and oxoglutarate dehydrogenase have been investigated in Saccharomyces cerevisiae grown in a variety of aerobic and hypoxic conditions, the latter including oxygen deprivation, high glucose concentration, addition of inhibitors of mitochondrial protein synthesis, respiratory inhibition by azide, and impaired respiration mutants. All hypoxic conditions led to a marked decrease of oxoglutarate dehydrogenase and significant decreases of the two isocitrate dehydrogenases. According to its kinetic properties, the NAD-isocitrate dehydrogenase will not be operative in hypoxia "in vivo". From these and other related facts it is concluded that hypoxic conditions in yeast generally lead to a splitting of the tricarboxylic acid cycle and that glutamate synthesis in these conditions takes place through the coupling of the NADP-linked isocitrate and glutamate dehydrogenases.

  7. Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

    SciTech Connect

    Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D.

    1996-05-01

    The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

  8. Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6H substrate

    SciTech Connect

    Wolfson, A. A.

    2009-06-15

    Growth of thick layers and bulk crystals of AlN is a topical problem for modern science and technology. The main way to solve the problem is to use the sublimation method in which AlN is evaporated at a temperature of about 2000{sup o}C and is epitaxially deposited onto a SiC substrate. A severe difficulty in this case is that the coefficients of thermal expansion of these materials are different, which leads to bending, cracking, and pronounced stresses in the AlN layer upon cooling to room temperature. This communication considers the case of a spontaneous detachment of a crack-free AlN layer from a SiC substrate, which points to the real possibility of developing a growth technology in which their separation becomes inevitable. The following reasons for spontaneous separation of the layer and the substrate are probable: (i) formation of a thin Al layer at the interface and (ii) occurrence of the initial growth stage by the previously described scheme, according to which, the layer and substrate are atomically bound only at separate comparatively sparse areas of nucleation of the growing crystal. Upon cooling, these areas disintegrate and the layer is detached from the substrate. It is unclear so far what specific features and anomalies of the growth process give rise to this result.

  9. Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

    NASA Astrophysics Data System (ADS)

    Perillat-Merceroz, Guillaume; Cosendey, Gatien; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2013-02-01

    Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, or high electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7% (layers under compressive strain). In both cases, a surface morphology with hillocks is initially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyond a critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of a surfactant effect. In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layer after V-defects coalescence. It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.

  10. Antimicrobial activity of Anonna mucosa (Jacq.) grown in vivo and obtained by in vitroculture.

    PubMed

    Barboza, Thiago José de Souza; Ferreira, Andréa Fonseca; Ignacio, Ana Claudia de Paula Rosa; Albarello, Norma

    2015-01-01

    Brazilian flora includes numerous species of medicinal importance that can be used to develop new drugs. Plant tissue culture offers strategies for conservation and use of these species allowing continuous production of plants and bioactive substances. Annona mucosa has produced substances such as acetogenins and alkaloids that exhibit antimicrobial activities. The widespread use of antibiotics has led to an increase in multidrug-resistant bacteria, which represents a serious risk of infection. In view of this problem, the aim of this work was to evaluate the antibacterial potential of extracts of A. mucosa obtained by in vitro techniques and also cultured under in vivo conditions. Segments from seedlings were inoculated onto different culture media containing the auxin picloram and the cytokinin kinetin at different concentrations. The calluses obtained were used to produce cell suspension cultures. The materials were subjected to methanol extraction and subsequent fractionation in hexane and dichloromethane. The antimicrobial activity against 20 strains of clinical relevance was evaluated by the macrodilution method at minimum inhibitory and minimum bactericidal concentrations. The extracts showed selective antimicrobial activity, inhibiting the growth of Streptococcus pyogenes and Bacillus thuringiensis at different concentrations. The plant tissue culture methods produced plant materials with antibacterial properties, as well as in vivo grown plants. The antibacterial activity of material obtained through biotechnological procedures of A. mucosa is reported here for the first time. PMID:26413061

  11. Antimicrobial activity of Anonna mucosa (Jacq.) grown in vivo and obtained by in vitroculture.

    PubMed

    Barboza, Thiago José de Souza; Ferreira, Andréa Fonseca; Ignacio, Ana Claudia de Paula Rosa; Albarello, Norma

    2015-01-01

    Brazilian flora includes numerous species of medicinal importance that can be used to develop new drugs. Plant tissue culture offers strategies for conservation and use of these species allowing continuous production of plants and bioactive substances. Annona mucosa has produced substances such as acetogenins and alkaloids that exhibit antimicrobial activities. The widespread use of antibiotics has led to an increase in multidrug-resistant bacteria, which represents a serious risk of infection. In view of this problem, the aim of this work was to evaluate the antibacterial potential of extracts of A. mucosa obtained by in vitro techniques and also cultured under in vivo conditions. Segments from seedlings were inoculated onto different culture media containing the auxin picloram and the cytokinin kinetin at different concentrations. The calluses obtained were used to produce cell suspension cultures. The materials were subjected to methanol extraction and subsequent fractionation in hexane and dichloromethane. The antimicrobial activity against 20 strains of clinical relevance was evaluated by the macrodilution method at minimum inhibitory and minimum bactericidal concentrations. The extracts showed selective antimicrobial activity, inhibiting the growth of Streptococcus pyogenes and Bacillus thuringiensis at different concentrations. The plant tissue culture methods produced plant materials with antibacterial properties, as well as in vivo grown plants. The antibacterial activity of material obtained through biotechnological procedures of A. mucosa is reported here for the first time.

  12. Antimicrobial activity of Anonna mucosa (Jacq.) grown in vivo and obtained by in vitroculture

    PubMed Central

    de Souza Barboza, Thiago José; Ferreira, Andréa Fonseca; de Paula Rosa Ignacio, Ana Claudia; Albarello, Norma

    2015-01-01

    Brazilian flora includes numerous species of medicinal importance that can be used to develop new drugs. Plant tissue culture offers strategies for conservation and use of these species allowing continuous production of plants and bioactive substances. Annona mucosa has produced substances such as acetogenins and alkaloids that exhibit antimicrobial activities. The widespread use of antibiotics has led to an increase in multidrug-resistant bacteria, which represents a serious risk of infection. In view of this problem, the aim of this work was to evaluate the antibacterial potential of extracts of A. mucosa obtained by in vitro techniques and also cultured under in vivo conditions. Segments from seedlings were inoculated onto different culture media containing the auxin picloram and the cytokinin kinetin at different concentrations. The calluses obtained were used to produce cell suspension cultures. The materials were subjected to methanol extraction and subsequent fractionation in hexane and dichloromethane. The antimicrobial activity against 20 strains of clinical relevance was evaluated by the macrodilution method at minimum inhibitory and minimum bactericidal concentrations. The extracts showed selective antimicrobial activity, inhibiting the growth of Streptococcus pyogenes and Bacillus thuringiensis at different concentrations. The plant tissue culture methods produced plant materials with antibacterial properties, as well as in vivo grown plants. The antibacterial activity of material obtained through biotechnological procedures of A. mucosa is reported here for the first time. PMID:26413061

  13. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

    SciTech Connect

    Simon, John; Schulte, Kevin L.; Young, David L.; Haegel, Nancy M.; Ptak, Aaron J.

    2016-01-01

    The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (Voc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (JSC) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.

  14. Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: A case study on MoSe{sub 2}

    SciTech Connect

    Utama, M. Iqbal Bakti; Lu, Xin; Yuan, Yanwen; Xiong, Qihua

    2014-12-22

    Seed catalyst such as perylene-3,4,9,10-tetracarboxylic acid tetrapotassium (PTAS) salt has been used for promoting the growth of atomically thin layered materials in chemical vapor deposition (CVD) synthesis. However, the ramifications from the usage of such catalyst are not known comprehensively. Here, we report the influence of PTAS seeding on the transistor device performance from few-layered CVD-grown molybdenum diselenide (MoSe{sub 2}) flakes. While better repeatability and higher yield can be obtained with the use of PTAS seeds in synthesis, we observed that PTAS-seeded flakes contain particle impurities. Moreover, devices from PTAS-seeded MoSe{sub 2} flakes consistently displayed poorer field-effect mobility, current on-off ratio, and subthreshold swing as compared to unseeded flakes.

  15. Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

    SciTech Connect

    Schmidbauer, M.; Wang, Zh. M.; Mazur, Yu. I.; Lytvyn, P. M.; Salamo, G. J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2007-08-27

    The self-organized formation of In{sub 0.40}Ga{sub 0.60}As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In{sub 0.40}Ga{sub 0.60}As dots shows weak quantum dot alignment and a corresponding elongated shape along [011], while the top layer of a multilayered In{sub 0.40}Ga{sub 0.60}As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [011]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

  16. Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

    NASA Astrophysics Data System (ADS)

    Song, Hooyoung; Soak Kim, Jin; Kim, Eun Kyu; Seo, Yong Gon; Hwang, Sung-Min

    2010-04-01

    Nonpolar (1120) a-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a (1102) r-plane sapphire substrate. The effects on the lattice constants of the a-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of (1120) X-ray rocking curves along the c- and m-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect.

  17. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

    SciTech Connect

    Aseev, Pavel Rodriguez, Paul E. D. Soto; Gómez, Víctor J.; Alvi, Naveed ul Hassan; Calleja, Enrique; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph; and others

    2015-02-16

    The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.

  18. Structural complexities in the active layers of organic electronics.

    PubMed

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  19. Structural, electrical and magnetic measurements on oxide layers grown on 316L exposed to liquid lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, Peter; Hofer, Christian; Hlawacek, Gregor; Li, Ning; Maloy, Stuart A.; Teichert, Christian

    2012-02-01

    Fast reactors and spallation neutron sources may use lead-bismuth eutectic (LBE) as a coolant. Its physical, chemical, and irradiation properties make it a safe coolant compared to Na cooled designs. However, LBE is a corrosive medium for most steels and container materials. The present study was performed to evaluate the corrosion behavior of the austenitic steel 316L (in two different delivery states). Detailed atomic force microscopy, magnetic force microscopy, conductive atomic force microscopy, and scanning transmission electron microscopy analyses have been performed on the oxide layers to get a better understanding of the corrosion and oxidation mechanisms of austenitic and ferritic/martensitic stainless steel exposed to LBE. The oxide scale formed on the annealed 316L material consisted of multiple layers with different compositions, structures, and properties. The innermost oxide layer maintained the grain structure of what used to be the bulk steel material and shows two phases, while the outermost oxide layer possessed a columnar grain structure.

  20. Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations.

    PubMed

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer.

  1. Incorporation of La in epitaxial SrTiO{sub 3} thin films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si (001) substrates

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.; Karako, Christine M.; Bruley, John; Frank, Martin M.; Narayanan, Vijay

    2014-06-14

    Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

  2. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    SciTech Connect

    Kalkofen, Bodo Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P.; Garke, Bernd; Lisker, Marco; Gargouri, Hassan

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  3. Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Nam, Taewook; Lee, Chang Wan; Kim, Hyun Jae; Kim, Hyungjun

    2014-03-01

    The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 °C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 °C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.

  4. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    SciTech Connect

    Vinokurov, D. A. Kapitonov, V. A.; Nikolaev, D. N.; Pikhtin, N. A.; Stankevich, A. L.; Shamakhov, V. V.; Bondarev, A. D.; Vavilova, L. S.; Tarasov, I. S.

    2011-10-15

    Heterostructures with an active region containing a Ga{sub 0.59}In{sub 0.41}As quantum well located between GaAs{sub 1-y}P{sub y} compensating layers were studied using photoluminescence spectroscopy. It was shown that an increase in the phosphorus content in compensating layers makes it possible to obtain unrelaxed heterostructures with wider Ga{sub 0.59}In{sub 0.41}As quantum wells. On the basis of photoluminescence studies, the parameters of such a composite active region were chosen with a view to attaining the longest lasing wavelength possible. Laser heterostructures with a composite active region consisting of a highly strained Ga{sub 0.59}In{sub 0.41}As quantum well located between GaAs{sub 0.85}P{sub 0.15} compensating layers were grown on GaAs substrates by metalloorganic chemical vapor deposition. Stripe mesa-structure laser diodes of 100-{mu}m aperture emitting at 1220 nm were fabricated. The highest emission power of these laser diodes in the continuous-wave regime amounted to 2 W per output mirror.

  5. Longevity of U cells of differentiated yeast colonies grown on respiratory medium depends on active glycolysis.

    PubMed

    Čáp, Michal; Váchová, Libuše; Palková, Zdena

    2015-01-01

    Colonies of Saccharomyces cerevisiae laboratory strains pass through specific developmental phases when growing on solid respiratory medium. During entry into the so-called alkali phase, in which ammonia signaling is initiated, 2 prominent cell types are formed within the colonies: U cells in upper colony regions, which have a longevity phenotype and activate the expression of a large number of metabolic genes, and L cells in lower regions, which die more quickly and exhibit a starvation phenotype. Here, we performed a detailed analysis of the activities of enzymes of central carbon metabolism in lysates of both cell types and determined several fermentation end products, showing that previously reported expression differences are reflected in the different enzymatic capabilities of each cell type. Hence, U cells, despite being grown on respiratory medium, behave as fermenting cells, whereas L cells rely on respiratory metabolism and possess active gluconeogenesis. Using a spectrum of different inhibitors, we showed that glycolysis is essential for the formation, and particularly, the survival of U cells. We also showed that β-1,3-glucans that are released from the cell walls of L cells are the most likely source of carbohydrates for U cells.

  6. Comparison of the antiproliferative activity of crude ethanol extracts of nine salvia species grown in Jordan against breast cancer cell line models

    PubMed Central

    Abu-Dahab, Rana; Afifi, Fatma; Kasabri, Violet; Majdalawi, Lara; Naffa, Randa

    2012-01-01

    Background: The antiproliferative activity of Salvia species grown in Jordan has not been fully evaluated yet. The aim of this work was to study the antiproliferative activity of crude ethanol extracts from nine Salvia species grown in Jordan against a panel of breast cancer cell lines. Material and Methods: Cytotoxic activity was evaluated in human tumor models of breast cancer; MCF-7, T47D, ZR-75-1, and BT 474 by the sulforhodamine B assay. In addition, the extracts were evaluated using a non-transformed cell line (Vero) and normal fibroblast cells in order to demonstrate their selectivity and safety. Results: From the nice ethanol extracts under investigation, those of S. dominica and S. fruticosa showed an inhibitory concentration of 50% of cells (IC50) in concentrations less than 30μg/mL against the four cell lines under investigation. S. syriaca and S. hormium showed an IC50 below 30μg/ml for two out of the four cell lines. S. fruticosa, S. hormium and S. syriaca showed selectivity in their antiproliferative activity against estrogen receptor positive cell lines with minimal toxicity against normal human periodontal fibroblasts. Phytochemical screening using thin layer chromatography indicated the presence of terpenoids, flavonoids and coumarins in all examined extracts. Conclusion: Three of the plant extracts under investigation exhibited antiproliferative activity against breast cancer cells and were shown to be safe and selective. These could be considered as a potential source for novel anticancer therapy. PMID:24082637

  7. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, N.; Munawar Basha, S.

    2013-09-28

    The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed AlN layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.

  8. High-performance ultraviolet photodetectors based on solution-grown ZnS nanobelts sandwiched between graphene layers

    PubMed Central

    Kim, Yeonho; Kim, Sang Jin; Cho, Sung-Pyo; Hong, Byung Hee; Jang, Du-Jeon

    2015-01-01

    Ultraviolet (UV) light photodetectors constructed from solely inorganic semiconductors still remain unsatisfactory because of their low electrical performances. To overcome this limitation, the hybridization is one of the key approaches that have been recently adopted to enhance the photocurrent. High-performance UV photodetectors showing stable on-off switching and excellent spectral selectivity have been fabricated based on the hybrid structure of solution-grown ZnS nanobelts and CVD-grown graphene. Sandwiched structures and multilayer stacking strategies have been applied to expand effective junction between graphene and photoactive ZnS nanobelts. A multiply sandwich-structured photodetector of graphene/ZnS has shown a photocurrent of 0.115 mA under illumination of 1.2 mWcm−2 in air at a bias of 1.0 V, which is higher 107 times than literature values. The multiple-sandwich structure of UV-light sensors with graphene having high conductivity, flexibility, and impermeability is suggested to be beneficial for the facile fabrication of UV photodetectors with extremely efficient performances. PMID:26197784

  9. Isolation of an enzyme complex with carbon monoxide dehydrogenase activity containing corrinoid and nickel from acetate-grown Methanosarcina thermophila.

    PubMed Central

    Terlesky, K C; Nelson, M J; Ferry, J G

    1986-01-01

    Fast protein liquid chromatography of cell extract from methanol- or acetate-grown Methanosarcina thermophila resolved two peaks of CO dehydrogenase activity. The activity of one of the CO dehydrogenases was sixfold greater in acetate-grown compared with methanol-grown cells. This CO dehydrogenase was purified to apparent homogeneity (70 mumol of methyl viologen reduced per min per mg of protein) and made up greater than 10% of the cellular protein of acetate-grown cells. The native enzyme (Mr 250,000) formed aggregates with an Mr of approximately 1,000,000. The enzyme contained five subunits (Mrs 89,000, 71,000, 60,000, 58,000, and 19,000), suggesting a multifunctional enzyme complex. Nickel, iron, cobalt, zinc, inorganic sulfide, and a corrinoid were present in the complex. The UV-visible spectrum suggested the presence of iron-sulfur centers. The electron paramagnetic resonance spectrum contained g values of 2.073, 2.049, and 2.028; these features were broadened in enzyme that was purified from cells grown in the presence of medium enriched with 61Ni, indicating the involvement of this metal in the spectrum. The pattern of potassium cyanide inhibition indicated that cyanide binds at or near the CO binding site. The properties of the enzyme imply an involvement in the dissimilation of acetate to methane, possibly by cleavage of acetate or activated acetate. Images PMID:3023296

  10. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-11-01

    In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

  11. The role of formation of continues thermally grown oxide layer on the nanostructured NiCrAlY bond coat during thermal exposure in air

    NASA Astrophysics Data System (ADS)

    Daroonparvar, Mohammadreza; Hussain, Mohammad Sakhawat; Yajid, Muhammad Azizi Mat

    2012-11-01

    In recent years, the life expectancy of thermal barrier coatings is expected to be improved by applying the nanostructured NiCrAlY bond coat. The present paper reviews the main technique used in the synthesis of nano-crystalline NiCrAlY powders using a planetary ball mill and investigates the microstructural evolution of thermally grown oxide (TGO) layer on the conventional and nanostructured atmospheric plasma sprayed (APS) NiCrAlY coatings in thermal barrier coating (TBC) systems during oxidation. Microstructural characterization showed that the growth of Ni(Cr,Al)2O4 (as spinel) and NiO on the surface of Al2O3 layer (as pure TGO) in nano TBC system was much lower compared to that of normal TBC system during thermal exposure at 1150 °C. These two oxides play a detrimental role in causing crack nucleation and growth, reducing the life of the TBC in air. This microstructure optimization of TGO layer is primarily associated with the formation of a continuous, dense, uniform Al2O3 layer (at first 24 h of isothermal oxidation at 1000 °C) over the nanostructured NiCrAlY coating.

  12. The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Salehzadeh, O.; He, C.; Benyon, W.; SpringThorpe, A. J.

    2016-07-01

    We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In1-xGaxAsyP1-y quaternary layers (x=0.18-0.41 and y=0.34-0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions, a systematic reduction (increase) in Indium (Gallium) was observed. This was accompanied by a reduction in the overall growth rate, and increased tensile strain, with increasing DEZn flow. In contrast, the dependence of arsenic/phosphorus incorporation on DEZn flow was found to depend on the surface stoichiometry. We show quantitatively that the observed tensile strain can be explained by compositional variations caused by the Zn-doping process. These results suggest that DEZn affects both homogeneous and heterogeneous processes during the growth of InGaAsP layers.

  13. Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths.

    PubMed

    Khanna, Amit; Subramanian, Ananth Z; Häyrinen, Markus; Selvaraja, Shankar; Verheyen, Peter; Van Thourhout, Dries; Honkanen, Seppo; Lipsanen, Harri; Baets, Roel

    2014-03-10

    A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si(3)N(4)) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) we demonstrate that surface roughness can be reduced. A 40 nm thick Al(2)O(3) layer is deposited by ALD over Si(3)N(4) based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (~5 dB/cm) is reported for a 220 nm x 500 nm Si(3)N(4) wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides.

  14. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  15. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, Rozaliya; Ice, Gene E; Liu, Wenjun; Einfeldt, S.; Hommel, D.; Roskowski, A. M.; Davis, R. F.

    2005-01-01

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  16. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, R.I.; Ice, G.E.; Liu, W.; Einfeldt, S.; Hommel, D.; Roskowski, A.M.; Davis, R.F.

    2010-06-25

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  17. Comparison of Degradative Ability, Enzymatic Activity, and Palatability of Aquatic Hyphomycetes Grown on Leaf Litter

    PubMed Central

    Suberkropp, Keller; Arsuffi, Thomas L.; Anderson, John P.

    1983-01-01

    Stream fungi have the capacity to degrade leaf litter and, through their activities, to transform it into a more palatable food source for invertebrate detritivores. The objectives of the present study were to characterize various aspects of fungal modification of the leaf substrate and to examine the effects these changes have on leaf palatability to detritivores. Fungal species were grown on aspen leaves for two incubation times. Leaves were analyzed to determine the weight loss, the degree of softening of the leaf matrix, and the concentrations of ATP and nitrogen associated with leaves. The activities of a protease and 10 polysaccharide-degrading enzymes produced by each fungus were also determined. Most fungi caused similar changes in physicochemical characteristics of the leaves. All fungi exhibited the capability to depolymerize pectin, xylan, and cellulose. Differences among fungi were found in their capabilities to produce protease and certain glycosidases. Leaf palatability was assessed by offering leaves of all treatments to larvae of two caddisfly shredders (Trichoptera). Feeding preferences exhibited by the shredders were similar and indicated that they perceived distinct differences among fungi. Two fungal species were highly consumed, some moderately and others only slightly. No relationships were found between any of the fungal characteristics measured and detritivore feeding preferences. Apparently, interspecific differences among fungi other than parameters associated with biomass or degradation of structural polysaccharides influence fungal palatability to caddisfly detritivores. PMID:16346343

  18. Genomic features of uncultured methylotrophs in activated-sludge microbiomes grown under different enrichment procedures.

    PubMed

    Fujinawa, Kazuki; Asai, Yusuke; Miyahara, Morio; Kouzuma, Atsushi; Abe, Takashi; Watanabe, Kazuya

    2016-01-01

    Methylotrophs are organisms that are able to grow on C1 compounds as carbon and energy sources. They play important roles in the global carbon cycle and contribute largely to industrial wastewater treatment. To identify and characterize methylotrophs that are involved in methanol degradation in wastewater-treatment plants, methanol-fed activated-sludge (MAS) microbiomes were subjected to phylogenetic and metagenomic analyses, and genomic features of dominant methylotrophs in MAS were compared with those preferentially grown in laboratory enrichment cultures (LECs). These analyses consistently indicate that Hyphomicrobium plays important roles in MAS, while Methylophilus occurred predominantly in LECs. Comparative analyses of bin genomes reconstructed for the Hyphomicrobium and Methylophilus methylotrophs suggest that they have different C1-assimilation pathways. In addition, function-module analyses suggest that their cell-surface structures are different. Comparison of the MAS bin genome with genomes of closely related Hyphomicrobium isolates suggests that genes unnecessary in MAS (for instance, genes for anaerobic respiration) have been lost from the genome of the dominant methylotroph. We suggest that genomic features and coded functions in the MAS bin genome provide us with insights into how this methylotroph adapts to activated-sludge ecosystems. PMID:27221669

  19. Genomic features of uncultured methylotrophs in activated-sludge microbiomes grown under different enrichment procedures

    PubMed Central

    Fujinawa, Kazuki; Asai, Yusuke; Miyahara, Morio; Kouzuma, Atsushi; Abe, Takashi; Watanabe, Kazuya

    2016-01-01

    Methylotrophs are organisms that are able to grow on C1 compounds as carbon and energy sources. They play important roles in the global carbon cycle and contribute largely to industrial wastewater treatment. To identify and characterize methylotrophs that are involved in methanol degradation in wastewater-treatment plants, methanol-fed activated-sludge (MAS) microbiomes were subjected to phylogenetic and metagenomic analyses, and genomic features of dominant methylotrophs in MAS were compared with those preferentially grown in laboratory enrichment cultures (LECs). These analyses consistently indicate that Hyphomicrobium plays important roles in MAS, while Methylophilus occurred predominantly in LECs. Comparative analyses of bin genomes reconstructed for the Hyphomicrobium and Methylophilus methylotrophs suggest that they have different C1-assimilation pathways. In addition, function-module analyses suggest that their cell-surface structures are different. Comparison of the MAS bin genome with genomes of closely related Hyphomicrobium isolates suggests that genes unnecessary in MAS (for instance, genes for anaerobic respiration) have been lost from the genome of the dominant methylotroph. We suggest that genomic features and coded functions in the MAS bin genome provide us with insights into how this methylotroph adapts to activated-sludge ecosystems. PMID:27221669

  20. Acclimation of aerobic-activated sludge degrading benzene derivatives and co-metabolic degradation activities of trichloroethylene by benzene derivative-grown aerobic sludge.

    PubMed

    Wang, Shizong; Yang, Qi; Bai, Zhiyong; Wang, Shidong; Wang, Yeyao; Nowak, Karolina M

    2015-01-01

    The acclimation of aerobic-activated sludge for degradation of benzene derivatives was investigated in batch experiments. Phenol, benzoic acid, toluene, aniline and chlorobenzene were concurrently added to five different bioreactors which contained the aerobic-activated sludge. After the acclimation process ended, the acclimated phenol-, benzoic acid-, toluene-, aniline- and chlorobenzene-grown aerobic-activated sludge were used to explore the co-metabolic degradation activities of trichloroethylene (TCE). Monod equation was employed to simulate the kinetics of co-metabolic degradation of TCE by benzene derivative-grown sludge. At the end of experiments, the mixed microbial communities grown under different conditions were identified. The results showed that the acclimation periods of microorganisms for different benzene derivatives varied. The maximum degradation rates of TCE for phenol-, benzoic acid-, toluene-, aniline- and chlorobenzene-grown aerobic sludge were 0.020, 0.017, 0.016, 0.0089 and 0.0047 mg g SS(-1) h(-1), respectively. The kinetic of TCE degradation in the absence of benzene derivative followed Monod equation well. Also, eight phyla were observed in the acclimated benzene derivative-grown aerobic sludge. Each of benzene derivative-grown aerobic sludge had different microbial community composition. This study can hopefully add new knowledge to the area of TCE co-metabolic by mixed microbial communities, and further the understanding on the function and applicability of aerobic-activated sludge.

  1. Ferroelectric properties of (Ba,Sr)TiO3 thin films grown on YBa2Cu3O7 layers

    NASA Astrophysics Data System (ADS)

    Tao, K.; Hao, Z.; Xu, B.; Chen, B.; Miao, J.; Yang, H.; Zhao, B. R.

    2003-09-01

    Ferroelectric and superconductor bilayers of Ba1-xSrxTiO3(BST)/YBa2Cu3 O7 (YBCO) are grown on (001) SrTiO3 substrates by magnetron sputtering and pulsed laser deposition. The BST thin films exhibit typical ferroelectric behavior in their hysteresis loops. Capacitance-voltage curves are measured. From the capacitance, a dielectric constant of 1250 is obtained. The current-voltage curve is fitted to investigate the mechanism of leakage. The Schottky barrier height at the Ag/BST interface is calculated to be 0.521 eV. The trapped level Et in BST is estimated to be 0.335 eV below the conduction-band edge. An energy band diagram of the Ag/BST/YBCO structure is proposed to explain the experimental results.

  2. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  3. Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Bedell, S. W.; Adam, T. N.; Turansky, A.; Sadana, D. K.

    2011-02-01

    A commercially available 300 mm single-wafer UHV-CVD reactor was used to grow strained pseudomorphic Si 0.79Ge 0.21 layers beyond the critical thickness on Si substrates. A unique in situ method of introducing controlled amounts of oxygen at the growth interface, combined with a very sensitive defect etching technique, was used to study the crystal defects present in the strained SiGe layers immediately after growth and after thermal annealing over large areas (many square centimeters). The etching results showed that the density of growth-related defects (stacking faults) originating from residual O at the epitaxy/substrate interface increases exponentially when the interfacial O concentration exceeds a level of about 10 13 O/cm 2 as measured by secondary ion mass spectroscopy. By defect etching the annealed samples we demonstrate that all the strain-relieving defects (dislocations) we observed originate from these growth defects. Therefore, we confirm previous claims that the strain metastability of low-misfit SiGe layers is controlled mainly by the initial concentration of growth defects. These findings have important implications regarding historical studies of metastability in the strained SiGe/Si system as well as contemporary efforts to grow highly metastable strained layers for IC applications.

  4. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  5. Temperature-activated layer-breathing vibrations in few-layer graphene.

    PubMed

    Lui, Chun Hung; Ye, Zhipeng; Keiser, Courtney; Xiao, Xun; He, Rui

    2014-08-13

    We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400-900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm(-1) for bilayer to 23 cm(-1) for 8-layer. The thickness dependence is well described by a simple model of coupled oscillators. Notably, the LBM Raman response is unobservable at room temperature, and it is turned on at higher temperature (>600 K) with a steep increase of Raman intensity. The observation suggests that the LBM vibration is strongly suppressed by molecules adsorbed on the graphene surface but is activated as desorption occurs at high temperature.

  6. Passive and active control of boundary layer transition

    NASA Astrophysics Data System (ADS)

    Nosenchuck, Daniel Mark

    It is well known that laminar-turbulent boundary layer transition is initiated by the formation of Tollmien-Schlichting laminar instability waves. The amplification rates of these waves are strongly dependent on the shape of the boundary layer velocity profile. Consequently, the transition process can be controlled by modifying the velocity profile. This can be accomplished by controlling the pressure gradient (dp/dx), using boundary layer suction, installing surface roughness elements, or by surface heating or cooling. Methods used to modify the transition process through changes in the mean velocity profile are called "passive" in this paper. There exists a large set of experiments and theory on the application of passive methods for boundary layer control. In the present work only surface heating will be addressed.Transition measurements were made on a heated flat plate in water. Results are presented for several plate wall temperature distributions. An increase by a factor of 2.5 in transition Reynolds number was observed for a 5°C isothermal wall overheat. Buoyancy effects on transition were minimal due to the small Richardson and Grashof numbers encountered in the experiments.The amplification of laminar instability waves is comparatively to process, taking place over many boundary layer thicknesses. After the slow amplification of the laminar instability waves, transition occurs by a strong three dimensional dynamic instability. It appears possible to attenuate (or reinforce) the instability waves by introducing amplitude-and phase-controlled perturbations into the laminar boundary layer using feedback control system. This method is called "active" control and forms the larger part of the research reported in this thesis.A combination of sensors, activators and feedback control electronics is required for active control. The sensors used in the experiments are flush-mounted hot film wall shear robes. A new type of activator was developed using thin, flush

  7. Estimating Active Layer Thickness from Remotely Sensed Surface Deformation

    NASA Astrophysics Data System (ADS)

    Liu, L.; Schaefer, K. M.; Zhang, T.; Wahr, J. M.

    2010-12-01

    We estimate active layer thickness (ALT) from remotely sensed surface subsidence during thawing seasons derived from interferometric synthetic aperture radar (InSAR) measurements. Ground ice takes up more volume than ground water, so as the soil thaws in summer and the active layer deepens, the ground subsides. The volume of melted ground water during the summer thaw determines seasonal subsidence. ALT is defined as the maximum thaw depth at the end of a thawing season. By using InSAR to measure surface subsidence between the start and end of summer season, one can estimate the depth of thaw over a large area (typically 100 km by 100 km). We developed an ALT retrieval algorithm integrating InSAR-derived surface subsidence, observed soil texture, organic matter content, and moisture content. We validated this algorithm in the continuous permafrost area on the North Slope of Alaska. Based on InSAR measurements using ERS-1/2 SAR data, our estimated values match in situ measurements of ALT within 1--10 cm at Circumpolar Active Layer Monitoring (CALM) sites within the study area. The active layer plays a key role in land surface processes in cold regions. Current measurements of ALT using mechanical probing, frost/thaw tubes, or inferred from temperature measurements are of high quality, but limited in spatial coverage. Using InSAR to estimate ALT greatly expands the spatial coverage of ALT observations.

  8. Efficacies of designer biochars in improving biomass and nutrient uptake of winter wheat grown in a hard setting subsoil layer.

    PubMed

    Sigua, G C; Novak, J M; Watts, D W; Johnson, M G; Spokas, K

    2016-01-01

    In the Coastal Plains region of the United States, the hard setting subsoil layer of Norfolk soils results in low water holding capacity and nutrient retention, which often limits root development. In this region, the Norfolk soils are under intensive crop production that further depletes nutrients and reduces organic carbon (C). Incorporation of pyrolyzed organic residues or "biochars" can provide an alternative recalcitrant C source. However, biochar quality and effect can be inconsistent and different biochars react differently in soils. We hypothesized that addition of different designer biochars will have variable effects on biomass and nutrient uptake of winter wheat. The objective of this study was to investigate the effects of designer biochars on biomass productivity and nutrient uptake of winter wheat (Triticum aestivum L.) in a Norfolk's hard setting subsoil layer. Biochars were added to Norfolk's hard setting subsoil layer at the rate of 40 Mg ha(-1). The different sources of biochars were: plant-based (pine chips, PC); animal-based (poultry litter, PL); 50:50 blend (50% PC:50% PL); 80:20 blend (80% PC:20% PL); and hardwood (HW). Aboveground and belowground biomass and nutrient uptake of winter wheat varied significantly (p⩽0.0001) with the different designer biochar applications. The greatest increase in the belowground biomass of winter wheat over the control was from 80:20 blend of PC:PL (81%) followed by HW (76%), PC (59%) and 50:50 blend of PC:PL (9%). However, application of PL resulted in significant reduction of belowground biomass by about 82% when compared to the control plants. The average uptake of P, K, Ca, Mg, Na, Al, Fe, Cu and Zn in both the aboveground and belowground biomass of winter wheat varied remarkably with biochar treatments. Overall, our results showed promising significance for the treatment of a Norfolk's hard setting subsoil layer since designer biochars did improve both aboveground/belowground biomass and nutrient uptake

  9. Direct physical exfoliation of few-layer graphene from graphite grown on a nickel foil using polydimethylsiloxane with tunable elasticity and adhesion.

    PubMed

    Yoo, Kwanghyun; Takei, Yusuke; Kim, Sungjin; Chiashi, Shohei; Maruyama, Shigeo; Matsumoto, Kiyoshi; Shimoyama, Isao

    2013-05-24

    We firstly introduce a facile method for the site-specific direct physical exfoliation of few-layer graphene sheets from cheap and easily enlargeable graphite grown on a Ni foil using an optimized polydimethylsiloxane (PDMS) stamp. By decreasing the PDMS cross-linking time, the PDMS elasticity is reduced to ∼52 kPa, similar to that of a typical gel. As a result of this process, the PDMS becomes more flexible yet remains in a handleable state as a stamp. Furthermore, the PDMS adhesion to a graphite/Ni surface, as measured by the peel strength, increases to ∼5.1 N m⁻¹, which is approximately 17 times greater than that of typical PDMS. These optimized properties allow the PDMS stamp to have improved contact with the graphite/Ni surface, including the graphite wrinkles. This process is verified, and changes in surface morphology are observed using a 3D laser scanning microscope. Under conformal contact, the optimized PDMS stamp demonstrates the site-specific direct physical exfoliation of few-layer graphene sheets including mono- and bi-layer graphene sheets from the graphite/Ni substrate without the use of special equipment, conditions or chemicals. The number of layers of the exfoliated graphene and its high quality are revealed by the measured Raman spectroscopy. The exfoliation method using tunable elasticity and adhesion of the PDMS stamp can be used not only for cost-effective mass production of defect-less few-layer graphene from the graphite substrate for micro/nano device arrays but also for nano-contact printing of various structures, devices and cells.

  10. Direct physical exfoliation of few-layer graphene from graphite grown on a nickel foil using polydimethylsiloxane with tunable elasticity and adhesion

    NASA Astrophysics Data System (ADS)

    Yoo, Kwanghyun; Takei, Yusuke; Kim, Sungjin; Chiashi, Shohei; Maruyama, Shigeo; Matsumoto, Kiyoshi; Shimoyama, Isao

    2013-05-01

    We firstly introduce a facile method for the site-specific direct physical exfoliation of few-layer graphene sheets from cheap and easily enlargeable graphite grown on a Ni foil using an optimized polydimethylsiloxane (PDMS) stamp. By decreasing the PDMS cross-linking time, the PDMS elasticity is reduced to ˜52 kPa, similar to that of a typical gel. As a result of this process, the PDMS becomes more flexible yet remains in a handleable state as a stamp. Furthermore, the PDMS adhesion to a graphite/Ni surface, as measured by the peel strength, increases to ˜5.1 N m-1, which is approximately 17 times greater than that of typical PDMS. These optimized properties allow the PDMS stamp to have improved contact with the graphite/Ni surface, including the graphite wrinkles. This process is verified, and changes in surface morphology are observed using a 3D laser scanning microscope. Under conformal contact, the optimized PDMS stamp demonstrates the site-specific direct physical exfoliation of few-layer graphene sheets including mono- and bi-layer graphene sheets from the graphite/Ni substrate without the use of special equipment, conditions or chemicals. The number of layers of the exfoliated graphene and its high quality are revealed by the measured Raman spectroscopy. The exfoliation method using tunable elasticity and adhesion of the PDMS stamp can be used not only for cost-effective mass production of defect-less few-layer graphene from the graphite substrate for micro/nano device arrays but also for nano-contact printing of various structures, devices and cells.

  11. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects. PMID:27124366

  12. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects.

  13. Mixing ALD/MLD-grown ZnO and Zn-4-aminophenol layers into various thin-film structures.

    PubMed

    Sundberg, Pia; Sood, Anjali; Liu, Xuwen; Karppinen, Maarit

    2013-11-14

    Building 2D inorganic-organic hybrids by combining inorganic and organic constituents with molecular-layer precision is an attractive approach to fabricate novel materials with a tailored combination of properties from both entities. Here we demonstrate the potential of the combined atomic and molecular layer deposition (ALD/MLD) technique for the state-of-the-art synthesis of such materials and to fabricate both homogeneous thin-film mixtures and nanolaminates of ZnO and the Zn-4-aminophenol inorganic-organic hybrid. The thin films are deposited by varying the number of precursor cycles during the depositions. Diethyl zinc and 4-aminophenol (AP) are used as precursors for the Zn-AP hybrid depositions, and diethyl zinc and water for the ZnO depositions. The characterization of the mixed Zn-AP and ZnO films reveals that crystallinity, density, surface roughness, chemical stability, hardness and contact modulus are sensitively altered by even a minor insertion of Zn-AP hybrid into the ZnO structure. Fabrication of Zn-AP + ZnO nanolaminates with different thicknesses of the Zn-AP and ZnO layers provides us with an even better way to control the hardness and contact modulus, and also to enhance the chemical stability of the films.

  14. Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Wang, Hong Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Geok Ng, Serene Lay; Ji, Rong; Liu, Zhi Hong

    2014-10-13

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  15. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

    SciTech Connect

    Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

    2008-10-15

    Indium incorporation into wurtzite (0001)-oriented In{sub x}Al{sub y}Ga{sub 1-x-y}N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.

  16. Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ye, Gang; Wang, Hong; Geok Ng, Serene Lay; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong

    2014-10-01

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaOx layer associated with low surface defect states due to "clean up" effect of ALD-ZrO2 on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  17. Effect of the annealing process on the microstructure of La 2Zr 2O 7 thin layers epitaxially grown on LaAlO 3 by metalorganic decomposition

    NASA Astrophysics Data System (ADS)

    Jiménez, C.; Caroff, T.; Rapenne, L.; Morlens, S.; Santos, E.; Odier, P.; Weiss, F.

    2009-05-01

    La 2Zr 2O 7 (LZO) films have been grown by metalorganic decomposition (MOD) to be used as buffer layers for coated conductors. A characteristic feature of LZO thin films deposited by MOD is the formation of nanovoids in an almost single crystal structure of LZO pyrochlore phase. Annealing parameters (heating ramp, temperature, pressure, etc.) were varied to establish their influence on the microstructure of the LZO layers. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for sample characterization. The epitaxial pyrochlore phase was obtained for annealing temperatures higher than 850 °C whatever the other annealing conditions. However, the film microstructure, in particular, nanovoids shape and size, is strongly dependent on heating ramp and pressure during annealing. When using low heating ramp, percolation of voids creates diffusion channels for oxygen which are detrimental for the substrate protection during coated conductor fabrication. From this point of view high heating rates are more adapted to the growth of LZO layers.

  18. Physico-chemical properties, antioxidant activity and mineral contents of pineapple genotypes grown in china.

    PubMed

    Lu, Xin-Hua; Sun, De-Quan; Wu, Qing-Song; Liu, Sheng-Hui; Sun, Guang-Ming

    2014-06-23

    The fruit physico-chemical properties, antioxidant activity and mineral contents of 26 pineapple [Ananas comosus (L.) Merr.] genotypes grown in China were measured. The results showed great quantitative differences in the composition of these pineapple genotypes. Sucrose was the dominant sugar in all 26 genotypes, while citric acid was the principal organic acid. Potassium, calcium and magnesium were the major mineral constituents. The ascorbic acid (AsA) content ranged from 5.08 to 33.57 mg/100 g fresh weight (FW), while the total phenolic (TP) content varied from 31.48 to 77.55 mg gallic acid equivalents (GAE)/100 g FW. The two parameters in the predominant cultivars Comte de Paris and Smooth Cayenne were relative low. However, MD-2 indicated the highest AsA and TP contents (33.57 mg/100 g and 77.55 mg GAE/100 g FM, respectively), and it also showed the strongest antioxidant capacity 22.85 and 17.30 μmol TE/g FW using DPPH and TEAC methods, respectively. The antioxidant capacity of pineapple was correlated with the contents of phenolics, flavonoids and AsA. The present study provided important information for the further application of those pineapple genotypes.

  19. Electrical and morphological characterization of transfer-printed Au/Ti/TiOx/p+-Si nano- and microstructures with plasma-grown titanium oxide layers

    NASA Astrophysics Data System (ADS)

    Weiler, Benedikt; Nagel, Robin; Albes, Tim; Haeberle, Tobias; Gagliardi, Alessio; Lugli, Paolo

    2016-04-01

    Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiOx/p+-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p+-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiOx-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p+-Si by our transfer protocol. Third, the fabricated nanodevices are also characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiOx-layers.

  20. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  1. DEFECT SELECTIVE ETCHING OF THICK ALN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY

    SciTech Connect

    Nyakiti, Luke; Chaudhari, Jharna; Kenik, Edward A; Lu, Peng; Edgar, J H

    2008-01-01

    In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size.

  2. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    SciTech Connect

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; Vajtai, Robert; Yakobson, Boris I.; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M.; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  3. Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Bejtka, K.; Edwards, P. R.; Martin, R. W.; Fernandez-Garrido, S.; Calleja, E.

    2008-10-01

    A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 deg. C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

  4. Contribution of generation-recombination processes at inner interface of MBE-grown Hg1-xCdxTe heterostucture to dark current of small active area photodiode

    NASA Astrophysics Data System (ADS)

    Chekanova, Galina V.; Drugova, Albina A.; Kholodnov, Viacheslav; Nikitin, Mikhail S.

    2009-09-01

    Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared (IR) focal plane arrays. However reaching of ultimate performance of small-pitched photodiode's (PD) covering spectral range from 8 to 12 μm depends on electronic properties of both individual layers and heterostructure interfaces. Due to small thickness of heterostructure layers, interfaces are located close to active regions of p-n junction and hence generation-recombination processes at interfaces will contribute to value of current flowing through junction. As usual measured dark current value of small-sized PD is higher than estimated from calculation and cannot be explained by discrepancy between real and estimated charge carriers concentration in absorption layers where p-n junction is formed. Objective of the present work was to calculate the contribution of recombination of charge carriers via electronic states on nearby inner interface to dark current of Hg1-xCdxTe LWIR PD (λco equals to 9.5-10.3 μm at Top=77 K) and its variation with absorption layer parameters and compare it to measured data on small-pitched arrays. We have concluded previously that at high recombination rate dark current can grow in orders of value.

  5. Active microwave remote sensing of an anisotropic random medium layer

    NASA Technical Reports Server (NTRS)

    Lee, J. K.; Kong, J. A.

    1985-01-01

    A two-layer anisotropic random medium model has been developed to study the active remote sensing of the earth. The dyadic Green's function for a two-layer anisotropic medium is developed and used in conjunction with the first-order Born approximation to calculate the backscattering coefficients. It is shown that strong cross-polarization occurs in the single scattering process and is indispensable in the interpretation of radar measurements of sea ice at different frequencies, polarizations, and viewing angles. The effects of anisotropy on the angular responses of backscattering coefficients are also illustrated.

  6. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    PubMed

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere. PMID:25852391

  7. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

    NASA Astrophysics Data System (ADS)

    Matveyev, Yu.; Egorov, K.; Markeev, A.; Zenkevich, A.

    2015-01-01

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO2/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO2 in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO2. The memristive properties of ALD grown TiN/HfO2/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  8. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    PubMed

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

  9. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

    SciTech Connect

    Matveyev, Yu.; Zenkevich, A.; Egorov, K.; Markeev, A.

    2015-01-28

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  10. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone

    NASA Astrophysics Data System (ADS)

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-02-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti3+ ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti3+ ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

  11. Enhanced free exciton and direct band-edge emissions at room temperature in ultrathin ZnO films grown on Si nanopillars by atomic layer deposition.

    PubMed

    Chang, Yuan-Ming; Shieh, Jiann; Chu, Pei-Yuan; Lee, Hsin-Yi; Lin, Chih-Ming; Juang, Jenh-Yih

    2011-11-01

    Room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200 °C, an intensive UV emission corresponding to free-exciton recombination (~3.31 eV) was observed with a nearly complete suppression of the defect-associated broad visible range emission peak. On the other hand, for ZnO films grown at 25 °C, albeit the appearance of the defect-associated visible emission, the UV emission peak was observed to shift by ~60 meV to near the direct band edge (3.37 eV) recombination emission. The high-resolution transmission electron microscopy (HRTEM) showed that the ZnO films obtained at 25 °C were consisting of ZnO nanocrystals with a mean radius of 2 nm embedded in a largely amorphous matrix. Because the Bohr radius of free-exictons in bulk ZnO is ~2.3 nm, the size confinement effect may have occurred and resulted in the observed direct band edge electron-hole recombination. Additionally, the results also demonstrate order of magnitude enhancement in emission efficiency for the ZnO/Si-NP structure, as compared to that of ZnO directly deposited on Si substrate under the same conditions.

  12. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    NASA Astrophysics Data System (ADS)

    Prasad, Neetu; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C.; Bhatia, C. S.

    2014-09-01

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ˜1.2 × 107 A/cm2 has been obtained for SLG (1 × 2.5 μm2) on SiO2/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  13. Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope

    SciTech Connect

    Hasegawa, Masaki; Ohno, Toshiyuki

    2011-10-01

    Mirror electron microscope (MEM) observation has been conducted for a 4-{mu}m-thick n-doped 4H-SiC epitaxial layer. If the sample is simultaneously illuminated with ultraviolet (UV) light of a slightly greater energy than the bandgap energy of 4H-SiC, in-grown stacking faults (IGSFs) can be clearly observed in MEM images. These observations were performed non-destructively, as almost all irradiated electrons returned without impinging the sample surface due to the negative voltage applied to the sample. High spatial resolution observation via MEM showed that multiple IGSFs were stacked up. The phenomenon in which the contrast of the IGSFs vanished in the absence of UV illumination and under UV illumination with a lower energy than the bandgap energy revealed that the origin of the contrast was the negative charging of IGSFs trapping electrons excited by UV light.

  14. Local Strain, Defects and Crystallographic Tilt in GaN(0001) Layers Grown by Maskless Pendeo-epitaxy from X-ray Microdiffraction

    SciTech Connect

    Barabash, R.I.; Ice, G.E.; Liu, W.; Einfeldt, S.; Roskovski, A.M.; Davis, R.F.

    2010-07-13

    Polychromatic x-ray microdiffraction, high-resolution monochromatic x-ray diffraction, and finite element simulations have been used to determine the distribution of strain, defects, and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeo-epitaxy. An important materials parameter was the width-to-height ratio of the etched columns of GaN from which occurred the lateral growth of the wings. Tilt boundaries formed at the column/wing interface for samples with a large ratio. Formation of the tilt boundary can be avoided by using smaller ratios. The strain and tilt across the stripe increased with the width-to-height ratio. The wings were tilted upward at room temperature.

  15. Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ferrari, S.; Scarel, G.; Wiemer, C.; Fanciulli, M.

    2002-12-01

    Atomic layer deposition (ALD) growth of high-κ dielectric films (ZrO2 and HfO2) was performed using ZrCl4, HfCl4, and H2O as precursors. In this work, we use time of flight secondary ion mass spectrometry to investigate the chlorine distribution in ALD grown ZrO2 and HfO2 films, and its evolution during rapid thermal processes in nitrogen atmosphere. Chlorine outdiffusion is found to depend strongly upon annealing temperature and weakly upon the annealing time. While in ZrO2 chlorine concentration is significantly decreased already at 900 °C, in HfO2 it is extremely stable, even at temperatures as high as 1050 °C.

  16. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    SciTech Connect

    Vinokurov, D. A. Nikolaev, D. N.; Pikhtin, N. A.; Stankevich, A. L.; Shamakhov, V. V.; Bondarev, A. D.; Rudova, N. A.; Tarasov, I. S.

    2011-09-15

    Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 {mu}m aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.

  17. Effect of various buffer-layer structures on the material quality and dislocation density of high composition Al/sub x/Ga/sub 1/. sqrt. /sub x/As laser material grown by metalorganic chemical vapor deposition

    SciTech Connect

    Givens, M.E.; Coleman, J.J.; Zmudzinski, C.A.; Bryan, R.P.; Emanuel, M.A.; Miller, L.M.

    1988-05-15

    The effect of various types of buffer layers on the generation and propagation of dislocations in epitaxial layers of high composition (x = 0.85) Al/sub x/Ga/sub 1/..sqrt../sub x/As grown by metalorganic chemical vapor deposition (MOCVD) on horizontal Bridgman (HB) and liquid-encapsulated Czochralski (LEC) substrates is examined. Bulk epilayers of high composition (x = 0.85) Al/sub x/Ga/sub 1/..sqrt../sub x/As and graded-barrier quantum-well laser structures with confining layers of the same composition were grown simultaneously on high-qualitylow etch-pit density (EPD) HB substrates and comparatively lower qualityhigh EPD LEC substrates with one of four types of compositionally graded andor superlattice buffer-layer structures. The bulk material was characterized by delineation and measurement of surface EPD and the observation of overall surface morphology. Data are also presented on the device characteristics of graded-barrier quantum-well laser diodes grown with these same buffer layers in order to determine the correlation between dislocation density and laser threshold current. The various buffer-layer structures were seen to be effective in reducing the defect density and improving the surface morphology of high composition epilayers grown on both HB and LEC substrates. The threshold-current density of the laser diodes, however, was independent of both the type of prelayer andor substrate utilized

  18. Changes of mesophyll and the rubisco activity in pea plants grown in clinostat

    NASA Astrophysics Data System (ADS)

    Adamchuk, N. I.

    In earlier research, it was found that microgravity causes alteration of mesophyll cell parameters and dislication at the ultrastructural level (Kordyum et al., 1989, Nedukha et al., 1991, Kordyum, 1997, Adamchuk et al., 2002). Also, destruction of the fine structure of chloroplasts was reported by Abilov et al. (1986), Aliev et al. (1987), Kordyum et al. (1989), and Adamchuk et al. (1999). In addition, Abilov et al. (1986), Aliev et al. (1987), Brown et al. (1993) have discovered the decrease in starch volume. The objective of this work was to compare quantitative ultrastructural parameters of mesophyll cells (including properties of their chloroplasts) and the level of Rubisco activity detected in clinorotated and control plants of pea (Pisum sativum L.). Plants were grown for 12 days in the nutritional medium of Hogland on a clinostat (with 2 rev. min-1 speed of rotation) at a temperature of 23-25°C and illumination 230 μ mol per m-2s-1. The comparison of transversal cross-sections of leaves has revealed a significant increase of mesophyll cell volume and intercellular space under experimental conditions. This expansion of mesophyll cells has correlated with an increase of the number of chloroplasts. Essential ultrastructural changes have affected the total volume of thylakoids. Also, the value of the photosynthetic membranes development in the clinorotated plants was higher 17.11 ± 1.94 μ m3 then in control -- 12.65 ± 1.83 μ m3 due to extension of destacking thylakoids. Increase of the volume density of plastoglobuli in the clinorotated plants on the 1.63-fold suggested the effect of either greater accumulation of lipid or acceleration of chloroplasts senescence. Under influence of clinorotation, the partial volume of starch inclusions significantly decreased in the spongy mesophyll chloroplasts -- 10.46 ± 1.80 % to compare with control -- 31.34 ± 2.37 %. However, the clinorotation of plants resulted in an increase of the Rubisco activity. Intensities

  19. Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO{sub 2}/Si nanofilms

    SciTech Connect

    Mani-Gonzalez, Pierre Giovanni; Vazquez-Lepe, Milton Oswaldo; Herrera-Gomez, Alberto

    2015-01-15

    Hafnium oxide nanofilms were grown with atomic layer deposition on H-terminated Si (001) wafers employing tetrakis dimethyl amino hafnium (TDMA-Hf) and water as precursors. While the number of cycles (30) and the aperture-time for TDMA-Hf (0.08 s) were kept constant, the aperture-time (τ{sub H{sub 2O}}) for the oxidant-agent (H{sub 2}O) was varied from 0 to 0.10 s. The structure of the films was characterized with robust analysis employing angle-resolved x-ray photoelectron spectroscopy. In addition to a ∼1 nm hafnium oxide layer, a hafnium silicate interface layer, also ∼1 nm thick, is formed for τ{sub H{sub 2O}} > 0. The incorporation degree of silicon into the interface layer (i.e., the value of 1 − x in Hf{sub x}Si{sub 1−x}O{sub y}) shows a minimum of 0.32 for τ{sub H{sub 2O}} = 0.04 s. By employing the simultaneous method during peak-fitting analysis, it was possible to clearly resolve the contribution from the silicate and from oxide to the O 1s spectra, allowing for the assessment of the oxygen composition of each layer as a function of oxidant aperture time. The uncertainties of the peak areas and on the thickness and composition of the layers were calculated employing a rigorous approach.

  20. Characteristics of oxide layer grown on gallium arsenide using 2.8 eV translational energy atomic oxygen

    NASA Astrophysics Data System (ADS)

    Cross, J. B.; Hoffbauer, M. A.; Farr, J. D.; Bermudez, V. M.; Glembocki, O. J.

    Thick (greater than 200 angstrom), uniform, oxide layers have been produced on GaAs (110) and (100) by reacting the substrate (T sub s less than 160 C) with high translational energy (1 to 3 eV) neutral atomic oxygen at flux levels of approx. 100 monolayers per second. The Ga and As species are formed in their highest oxidation states respectively which implies formation of either Ga2 O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline), as in the oxide or at the interface between the oxide and substrate, and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

  1. Characteristics of oxide layer grown on gallium arsenide using 2. 8 eV translational energy atomic oxygen

    SciTech Connect

    Cross, J.B.; Hoffbauer, M.A.; Farr, J.D. ); Bermudez, V.M.; Glembocki, O.J. )

    1990-01-01

    Thick (>200 {angstrom}), uniform, oxide layers have been produced on GaAs (110) and (100) by reacting the substrate (T{sub s}<160{degree}C) with high translational energy (1--3 eV) neutral atomic oxygen at flux levels of {approx}100 monolayers per second. The Ga and As species are formed in their highest oxidation states respectively which implies formation of either Ga{sub 2}O{sub 3} and As{sub 2}O{sub 5} or GaAsO{sub 4}. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline). As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes. 16 refs., 4 figs.

  2. Insitu grown superhydrophobic Zn-Al layered double hydroxides films on magnesium alloy to improve corrosion properties

    NASA Astrophysics Data System (ADS)

    Zhou, Meng; Pang, Xiaolu; Wei, Liang; Gao, Kewei

    2015-05-01

    A hierarchical superhydrophobic zinc-aluminum layered double hydroxides (Zn-Al LDHs) film has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method following chemical modification. The characteristics of the films were investigated by X-ray diffraction (XRD), scanning electronic microscope (SEM), and energy dispersive spectroscopy (EDS). XRD patterns and SEM images showed that the micro/nanoscale hierarchical LDHs film surfaces composed of ZnO nanorods and Zn-Al LDHs nanowalls structures. The static contact angle (CA) for the prepared surfaces was observed at around 165.6°. The corrosion resistance of the superhydrophobic films was estimated by electrochemical impedance spectroscopy (EIS) and potentiondynamic polarization measurement. EIS and polarization measurements revealed that the superhydrophobic Zn-Al LDHs coated magnesium alloy had better corrosion resistance in neutral 3.5 wt.% NaCl solution.

  3. Nano-indentation of single-layer optical oxide thin films grown by electron-beam deposition

    SciTech Connect

    Mehrotra, K.; Oliver, J. B.; Lambropoulos, J. C.

    2015-01-01

    Mechanical characterization of optical oxide thin films is performed using nano-indentation, and the results are explained based on the deposition conditions used. These oxide films are generally deposited to have a porous microstructure that optimizes laser induced damage thresholds, but changes in deposition conditions lead to varying degrees of porosity, density, and possibly the microstructure of the thin film. This can directly explain the differences in the mechanical properties of the film studied here and those reported in literature. Of the four single-layer thin films tested, alumina was observed to demonstrate the highest values of nano-indentation hardness and elastic modulus. This is likely a result of the dense microstructure of the thin film arising from the particular deposition conditions used.

  4. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Kane, D.L.

    1986-01-01

    In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. During the ablation period, runoff dominates the hydrologic cycle. Some meltwater goes to rewetting the organic soils in the active layer. The remainder is lost primarily because of evaporation, since transpiration is not a very active process at this time. Following the snowmelt period, evapotranspiration becomes the dominate process, with base flow contributing the other watershed losses. It is important to note that the water initally lost by evapotranspiration entered the organic layer during melt. This water from the snowpack ensures that each year the various plant communities will have sufficient water to start a new summer of growth.

  5. Layered shielding design for an active neutron interrogation system

    NASA Astrophysics Data System (ADS)

    Whetstone, Zachary D.; Kearfott, Kimberlee J.

    2016-08-01

    The use of source and detector shields in active neutron interrogation can improve detector signal. In simulations, a shielded detector with a source rotated π/3 rad relative to the opening decreased neutron flux roughly three orders of magnitude. Several realistic source and detector shield configurations were simulated. A layered design reduced neutron and secondary photon flux in the detector by approximately one order of magnitude for a deuterium-tritium source. The shield arrangement can be adapted for a portable, modular design.

  6. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  7. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Das, Gangadhar; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics.

  8. Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Yohei; Taniyama, Yuuki; Takatsu, Hiroaki; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke

    2016-05-01

    Growth methods using Ga2O vapor allow long-term growth of bulk GaN crystals. Ga2O vapor is generated by the reduction of Ga2O3 powder with H2 gas (Ga2O3-H2 process) or by the oxidation of liquid Ga with H2O vapor (Ga-H2O process). We investigated the dependence of the properties of grown GaN layers on the synthesis of Ga2O. In the Ga-H2O process, the polycrystal density and full width at half maximum (FWHM) GaN(0002) X-ray rocking curves (XRC) at a high growth rate were lower than those in the Ga2O3-H2 process, and a GaN layer with FWHM of 99 arcsec and growth rate of 216 µm/h was obtained. A low H2O partial pressure in the growth zone improved crystallinity in the Ga-H2O process, realized by the high efficiency of conversion from liquid Ga to Ga2O vapor. We concluded that using Ga2O vapor in the Ga-H2O process has the potential for obtaining higher crystallinity with high growth rate.

  9. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density–voltage and frequency dependent (7 kHz–5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole–Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  10. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  11. Brookite TiO2 thin film epitaxially grown on (110) YSZ substrate by atomic layer deposition.

    PubMed

    Kim, Dai-Hong; Kim, Won-Sik; Kim, Sungtae; Hong, Seong-Hyeon

    2014-08-13

    Epitaxial brookite TiO2 (B-TiO2) film was deposited on (110) yttria-stabilized zirconia (YSZ) substrate using plasma-enhanced atomic layer deposition, and its structural, optical, and gas sensing properties were investigated. As-deposited TiO2 film was a pure brookite and (120) oriented. The determined in-plane orientation relationships were [21̅0]B-TiO2//[1̅10]YSZ and [001]B-TiO2 //[001]YSZ. The B-TiO2 film showed ∼70% transmittance and the optical band gap energy was 3.29 eV. The B-TiO2 film-based gas sensor responded to H2 gas even at room temperature and the highest magnitude of the gas response was determined to be ∼150 toward 1000 ppm of H2/air at 150 °C. In addition, B-TiO2 sensor showed a high selectivity for H2 against CO, EtOH, and NH3.

  12. Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

    SciTech Connect

    Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos

    2004-09-01

    In this work thin films of hafnium oxide are deposited on Si(100) substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of 250-350 deg. C. Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with A scale resolution, and spectroscopic ellipsometry. The observed ALD rate is {approx}1.4 A per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the HfO{sub 2} growth is investigated in detail.

  13. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

    SciTech Connect

    Wan, Zhixin; Kwack, Won-Sub; Lee, Woo-Jae; Jang, Seung-II; Kim, Hye-Ri; Kim, Jin-Woong; Jung, Kang-Won; Min, Won-Ja; Yu, Kyu-Sang; Park, Sung-Hun; Yun, Eun-Young; Kim, Jin-Hyock; Kwon, Se-Hun

    2014-09-15

    Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

  14. Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wang, Aiji; Chen, Tingfang; Lu, Shuhua; Wu, Zhenglong; Li, Yongliang; Chen, He; Wang, Yinshu

    2015-02-01

    Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10-3 Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.

  15. GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Yue, Yuan-Zheng; Hao, Yue; Feng, Qian; Zhang, Jin-Cheng; Ma, Xiao-Hua; Ni, Jin-Yu

    2007-08-01

    We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, the device with maximum transconductance of 150 mS/mm is produced and discussed in comparison with the result of 100 mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800 mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.

  16. Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications

    NASA Astrophysics Data System (ADS)

    Garcia, I.; France, R. M.; Geisz, J. F.; Simon, J.

    2014-05-01

    The metamorphic growth of lattice-mismatched materials has allowed optimizing the bandgap combination in multijunction solar cells for the solar spectrum under consideration. Buffer structures are used to accommodate the lattice-mismatch by introducing dislocations and relaxing the material in a controlled way. However, the metamorphic buffers typically involve significant growth time and material usage, which increases the cost of these solar cells. In this work, the thinning of buffer structures with continuously, linearly graded misfit is addressed with the goal of increasing the cost-effectiveness of metamorphic multijunction solar cells. The relaxation dynamics and quality of the buffer layers analyzed were assessed by in-situ stress measurements and ex-situ measurements of residual strain, threading dislocation density and surface roughness. Their ultimate quality has been tested using these buffers as templates for the growth of 1 eV Ga0.73In0.27As solar cells. The deleterious effect of thinning the grade layer of these buffer structures from 2 to 1 μm was investigated. It is shown that prompting the relaxation of the buffer by using a stepwise misfit jump at the beginning of the grade layer improves the quality of the thinned buffer structure. The residual threading dislocation density of the optimized thin buffers, grown at a high growth rate of 7 μm/h, is 3×106 cm-2, and solar cells on these buffers exhibit near-ideal carrier collection efficiency and a Voc of 0.62 V at 1-sun direct terrestrial spectrum.

  17. Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

    NASA Astrophysics Data System (ADS)

    Ha, Ju-Hyung; Wang, Juan; Lee, Won-Jae; Choi, Young-Jun; Lee, Hae-Yong; Kim, Jung-Gon; Harima, Hiroshi

    2015-03-01

    The hydride vapor-phase epitaxy (HVPE) method was used to deposit high-quality InN layers on GaN inter-layer/sapphire (0001) structures that had been fabricated by using either the HVPE method or the metal-organic chemical-phase deposition (MOCVD) method. The effects of the group V/III ratio and different GaN inter-layers on the crystal quality of the InN layers were systemically investigated. The InN layer grown at a low Group V/III ratio revealed a high crystal quality with a two-dimensional (2D) growth mode. Also, the 110.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) substrate structure that had been fabricated by using MOCVD had a high crystal quality, with the full width at half maximum (FWHM) of the InN X-ray diffraction (XRD) peak being about 844 arcsec, and a smooth surface with an atomic force microscopy (AFM) roughness of about 0.07 nm. On the other hand, the 145.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) substrate structure that had been fabricated by using the HVPE method had a lower crystal quality, a FWHM value for the InN (0002) peak of about 2772 arcsec, and a surface roughness of about 3.73 nm. In addition, the peak of the E2 (high) phonon mode for the 110.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) structure that had been fabricated by using MOCVD was detected at 491 cm -1 and had a FWHM of 9.9 cm-1. As a result, InN layers grown by using HVPE on GaN inter-layer/sapphire (0001) substrate structures fabricated by using MOCVD have a high crystal quality and a reduced Raman value, which agrees well with the results of the XRD analysis.

  18. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  19. Nanoscale investigation of platinum nanoparticles on strontium titanium oxide grown via physical vapor deposition and atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Christensen, Steven Thomas

    This dissertation examines growth of platinum nanoparticles from vapor deposition on SrTiO3 using a characterization approach that combines imaging techniques and X-ray methods. The primary suite of characterization probes includes atomic force microscopy (AFM), grazing-incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), scanning electron microscopy (SEM), and X-ray absorption spectroscopy (XAS). The vapor deposition techniques include physical vapor deposition (PVD) by evaporation and atomic layer deposition (ALD). For the PVD platinum study, AFM/XRF showed ˜10 nm nanoparticles separated by an average of 100 nm. The combination of AFM, GISAXS, and XRF indicated that the nanoparticles observed with AFM were actually comprised of closely spaced, smaller nanoparticles. These conclusions were supported by high-resolution SEM. The unusual behavior of platinum nanoparticles to aggregate without coalescence or sintering was observed previously by other researchers using transmissision electron microscopy (TEM). Platinum nanoparticle growth was also investigated on SrTiO3 (001) single crystals using ALD to nucleate nanoparticles that subsequently grew and coalesced into granular films as the ALD progresses. The expected growth rate for the early stages of ALD showed a two-fold increase which was attributed to the platinum deposition occurring faster on the bare substrate. Once the nanoparticles had coalesced into a film, steady state ALD growth proceeded. The formation of nanoparticles was attributed to the atomic diffusion of platinum atoms on the surface in addition to direct growth from the ALD precursor gases. The platinum ALD nanoparticles were also studied on SrTiO3 nanocube powders. The SrTiO3 nanocubes average 60 nm on a side and the cube faces have a {001} orientation. The ALD proceeded in a similar fashion as on the single crystal substrates where the deposition rate was twice as fast as the steady state growth rate. The Pt nanoparticle

  20. Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

    SciTech Connect

    Shan, F.K.; Liu, G.X.; Lee, W.J.; Lee, G.H.; Kim, I.S.; Shin, B.C.

    2005-07-15

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were deposited on silicon (100) and sapphire (001) substrates using the plasma-enhanced atomic layer deposition (PEALD) technique with an alternating supply of reactant source, [(CH{sub 3}){sub 2}GaNH{sub 2}]{sub 3}, and oxygen plasma. The thin films were annealed at different temperatures (500, 700, and 900 deg. C, respectively) in a rapid thermal annealing system for 1 min. It was found that Ga{sub 2}O{sub 3} thin films deposited by PEALD showed excellent step coverage characteristics. X-ray diffraction measurements showed that the as-deposited thin film was amorphous. However, the thin films annealed at temperatures higher than 700 deg. C showed a (400) orientation of the monoclinic structure. An atomic force microscope was used to investigate the surface morphologies of the thin films. The thin films showed very smooth surfaces; the roughness of the as-deposited thin film was about 4 A . With increasing annealing temperature, the thin film became rougher compared with that annealed at lower temperatures. A double-beam spectrophotometer was used to measure the transmittances of the thin films on the sapphire substrates. The thin films showed a very high transmittance (nearly 100%). The band-gap energies of the thin films were determined by a linear fit of the transmittance spectra and were calculated to be between 5.0 and 5.24 eV. The electrical properties of thin films of Pt/film/Si structure were also investigated. It was found that, with increasing annealing temperature, the insulating characteristics of the Ga{sub 2}O{sub 3} thin films were significantly improved. Spectroscopic ellipsometry was used to derive the refractive indices and the thicknesses of the thin films. The refractive indices of the thin films showed normal dispersion behavior. The refractive indices of the thin films annealed at low temperatures were smaller than those annealed at high temperatures.

  1. Surface activation of CNT Webs towards layer by layer assembly of biosensors.

    PubMed

    Musameh, Mustafa; Huynh, Chi P; Hickey, Mark; Kyratzis, Ilias Louis

    2016-04-25

    Several surface activation methods such as chemical, electrochemical and plasma have been used for enhancing the electrochemical performance of carbon based electrodes for various applications. However, some of these surface activation methods may not be useful depending on the chemical and physical properties of the activated surface. Herein we investigate the surface activation of carbon nanotube (CNT) webs by electrochemical and plasma techniques to enhance their electrochemical performance and enable the fabrication of a biosensor using the layer-by-layer (LBL) approach. The pretreated CNT webs were characterized by SEM, TEM, Raman, XPS and electrochemical methods. TEM images and Raman analysis showed an increase in the level of surface defects upon pretreatment with higher number of defects after electrochemical pretreatment. XPS analysis showed an increase in the level of oxygen functional groups after pretreatment (4 to 5 times increase) which resulted in enhanced water wettability especially for plasma pretreated CNT webs. The pretreated CNT web electrodes also showed an enhanced electrochemical activity towards the oxidation and reduction of different redox probes with higher sensitivity for the electrochemically pretreated CNT web electrode that was accompanied by a higher level of noise in amperometric measurements. A highly linear response was obtained for the untreated and the electrochemically pretreated CNT web electrodes towards the amperometric detection of NADH (R(2) of 0.9996 and 0.9986 respectively) while a non-linear response was observed for the plasma pretreated CNT web electrode (R(2) of 0.8538). The pretreated CNT web electrodes enabled the fabrication of a LBL biosensor for alcohol detection with highest operational stability obtained for the plasma pretreated CNT web surface.

  2. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

    PubMed

    Tang, Mingchu; Chen, Siming; Wu, Jiang; Jiang, Qi; Dorogan, Vitaliy G; Benamara, Mourad; Mazur, Yuriy I; Salamo, Gregory J; Seeds, Alwyn; Liu, Huiyun

    2014-05-19

    We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

  3. GABA-A receptor antagonists increase firing, bursting and synchrony of spontaneous activity in neuronal networks grown on microelectrode arrays: a step towards chemical "fingerprinting"

    EPA Science Inventory

    Assessment of effects on spontaneous network activity in neurons grown on MEAs is a proposed method to screen chemicals for potential neurotoxicity. In addition, differential effects on network activity (chemical "fingerprints") could be used to classify chemical modes of action....

  4. Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature

    SciTech Connect

    Tanimura, T.; Watanabe, Y.; Hirota, Y.; Sato, Y.; Kabe, Y.

    2013-02-14

    The effects of microwave plasma treatments on the physical and electrical characteristics of silicon dioxide films are discussed. Plasma treatments significantly improve the characteristics at low temperatures. Differences in the type of inert gas, O{sub 2} partial pressure, and total pressure cause differences in the plasma energy and active species concentrations, which affect reduction in the impurity concentrations, generation of dangling bonds, and effective working depth of the plasma. The changes in the electrical characteristics of the plasma-treated oxide films are consistent with those in the physical characteristics. The plasma conditions that result in the best improvements are determined.

  5. Comparative study of photocatalytic activities of hydrothermally grown ZnO nanorod on Si(001) wafer and FTO glass substrates.

    PubMed

    Jeon, Eun Hee; Yang, Sena; Kim, Yeonwoo; Kim, Namdong; Shin, Hyun-Joon; Baik, Jaeyoon; Kim, Hyun Sung; Lee, Hangil

    2015-12-01

    ZnO nanorods have been grown on Si(001) wafer and fluorine-doped tin oxide (FTO) glass substrates for 1 and 4 h with the hydrothermal methods. The morphologies and photocatalytic activities of the ZnO nanorods were found to depend on the substrates. We investigated their properties by using spectroscopic analysis and demonstrated that the shape of nanorod and the ratios of external defects can be controlled by varying the substrates. Our experiments revealed that the nanorods grown on Si(001) have a single-crystalline wurtzite structure with (002) facets and that the number of surface oxygen defects increases with their length as the growth time increases. The nanorods grown on Si(001) have different facets, in particular wider (002) facets, and a higher ratio of the oxygen defect than the nanorods on FTO glass substrate. Moreover, the photocatalytic activities with respect to 2-aminothiophenol (2-ATP) of these nanorods were investigated with high-resolution photoemission spectroscopy (HRPES). We demonstrated that their photocatalytic activity is influenced by the ratios of surface oxygen defects, which varies with the substrate surface.

  6. Comparative study of photocatalytic activities of hydrothermally grown ZnO nanorod on Si(001) wafer and FTO glass substrates

    NASA Astrophysics Data System (ADS)

    Jeon, Eun Hee; Yang, Sena; Kim, Yeonwoo; Kim, Namdong; Shin, Hyun-Joon; Baik, Jaeyoon; Kim, Hyun Sung; Lee, Hangil

    2015-09-01

    ZnO nanorods have been grown on Si(001) wafer and fluorine-doped tin oxide (FTO) glass substrates for 1 and 4 h with the hydrothermal methods. The morphologies and photocatalytic activities of the ZnO nanorods were found to depend on the substrates. We investigated their properties by using spectroscopic analysis and demonstrated that the shape of nanorod and the ratios of external defects can be controlled by varying the substrates. Our experiments revealed that the nanorods grown on Si(001) have a single-crystalline wurtzite structure with (002) facets and that the number of surface oxygen defects increases with their length as the growth time increases. The nanorods grown on Si(001) have different facets, in particular wider (002) facets, and a higher ratio of the oxygen defect than the nanorods on FTO glass substrate. Moreover, the photocatalytic activities with respect to 2-aminothiophenol (2-ATP) of these nanorods were investigated with high-resolution photoemission spectroscopy (HRPES). We demonstrated that their photocatalytic activity is influenced by the ratios of surface oxygen defects, which varies with the substrate surface.

  7. Effects of post-annealing temperature on the properties of ZnO nanorods grown on homogenous seed-layers by using the hydrothermal method

    NASA Astrophysics Data System (ADS)

    Yim, Kwang Gug; Kim, Min Su; Kim, Soaram; Leem, Jae-Young; Nam, Giwoong; Jeon, Su Min; Lee, Dong-Yul; Kim, Jin Soo; Kim, Jong Su; Lee, Joo In

    2012-05-01

    ZnO nanorods were grown on Si substrates by using the hydrothermal method; then, they were post-annealed at various temperatures ranging from 573 to 973 K. The effects of post-annealing temperature on the structural and the optical properties were investigated by using scanning electron microscopy (SEM), X-ray diffraction, and photoluminescence (PL). After the post-annealing process, small pores had been formed on the surface of the ZnO nanorods without any change in the shape of the ZnO nanorods. A tensile stress was observed in the as-grown and the post-annealed ZnO nanorods. The PL intensity ratio of the near-band-edge emission (NBE) to the deep-level emission (DLE) was enhanced, and the DLE peak shifted from yellow to orange emission with increasing post-annealing temperature. The activation energy of the post-annealed ZnO nanorods was increased by the post-annealing process.

  8. Acetylcholinesterase-Inhibition and Antibacterial Activity of Mondia whitei Adventitious Roots and Ex vitro-Grown Somatic Embryogenic-Biomass

    PubMed Central

    Baskaran, Ponnusamy; Kumari, Aloka; Ncube, Bhekumthetho; Van Staden, Johannes

    2016-01-01

    Mondia whitei (Hook.f.) Skeels is an important endangered medicinal and commercial plant in South Africa. In vitro propagation systems are required for biomass production and bioactivity analysis to supplement wild resources/stocks. Adventitious roots from somatic embryogenic explants using suspension culture and ex vitro-grown plants produced via somatic embryogenesis were established using different plant growth regulator treatments. The adventitious root biomass and different parts of ex vitro-grown and mother plants were used to investigate the potential for acetylcholinesterase (AChE) and antibacterial activities. Adventitious roots derived from 2.5 μM indole-3-acetic acid (IAA) treatments and ex vitro-grown plants derived from meta-topolin riboside and IAA treatments gave the best AChE and antibacterial activities. The in vitro-established M. whitei and ex vitro biomass have comparable ability to function as inhibitors of acetylcholinesterase and antibacterial agents, and can be used as potent bioresources in traditional medicine. PMID:27752244

  9. Experiments on the active control of transitional boundary layers

    NASA Astrophysics Data System (ADS)

    Nelson, P. A.; Rioual, J.-L.; Fisher, M. J.

    Experimental results are presented which demonstrate that the streamwise position of the transition region of a flat plate boundary layer can be actively controlled. The means of control is through the application of suction through the surface of the plate, a progressive increase in suction rate being capable of producing transition at progressively larger distances downstream from the plate leading edge. A simple digital feedback regulator based on an integral control law is shown to be most effective in regulating the position of transition, an error signal being derived from measurements of pressure fluctuations on the surface of the plate.

  10. Nanoporous aluminum oxide membranes coated with atomic layer deposition-grown titanium dioxide for biomedical applications: An in vitro evaluation

    SciTech Connect

    Kumar, Girish; Fu, Wujun; Zhang, Qin Fen; Zheng, Jiwen; Liang, Chengdu; Goering, Peter L.; Narayan, Roger J.

    2015-12-01

    The surface topographies of nanoporous anodic aluminum oxide (AAO) and titanium dioxide (TiO2) membranes have been shown to modulate cell response in orthopedic and skin wound repair applications. In this study, we: (1) demonstrate an improved atomic layer deposition (ALD) method for coating the porous structures of 20, 100, and 200 nm pore diameter AAO with nanometer-thick layers of TiO2 and (2) evaluate the effects of uncoated AAO and TiO2-coated AAO on cellular responses. The TiO2 coatings were deposited on the AAO membranes without compromising the openings of the nanoscale pores. The 20 nm TiO2-coated membranes showed the highest amount of initial protein adsorption via the micro bicinchoninic acid (micro-BOA) assay; all of the TiO2-coated membranes showed slightly higher protein adsorption than the uncoated control materials. Cell viability, proliferation, and inflammatory responses on the TiO2-coated AAO membranes showed no adverse outcomes. For all of the tested surfaces, normal increases in proliferation (DNA content) of L929 fibroblasts were observed over from 4 hours to 72 hours. No increases in TNF-alpha production were seen in RAW 264.7 macrophages grown on TiO2-coated AAO membranes compared to uncoated AAO membranes and tissue culture polystyrene (TOPS) surfaces. Both uncoated AAO membranes and TiO2-coated AAO membranes showed no significant effects on cell growth and inflammatory responses. In conclusion, the results suggest that TiO2-coated AAO may serve as a reasonable prototype material for the development of nanostructured wound repair devices and orthopedic implants.

  11. Spectral behavior of the temperature-dependent photoresponse of BaAl2S4 layers grown by using hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Jeong, J. W.; Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2016-08-01

    The characteristic photocurrent (PC) property of BaAl2S4 layers grown by using hot-wall epitaxy was investigated. With decreasing temperature, the PC peaks position shifted toward the short-wavelength region and its intensity decreased dramatically. The energy variation of the PC peaks shift at different temperatures could be matched well by using E g ( T) = E g (0) - 7.556 × 10-4 T 2/( T + 523), where E g (0) was 4.0596, 4.1053, and 4.1094 eV corresponding to Γ4( z), Γ5( y), and Γ5( x) in the valence band in order of increasing energy, respectively. Thus, by the selection rule, the crystal field and the spin-orbit splitting were found to be 47.5 and -5.9 meV, respectively, through PC spectroscopy measurement. From the negative result for the spin-orbit parameter, the middle Γ5( x) and the lowest Γ5( y) levels in the valence band were found to be interchanged. By using the relation between the logarithm of the PC density and the reciprocal temperature, we extracted the dominant trap level as 23.2 in the high-temperature region and 5.4 meV in the low-temperature region. Consequently, we found that the dramatic decrease on the PC intensity was caused by these trapping centers.

  12. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  13. Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.

    2013-03-04

    The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

  14. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    SciTech Connect

    Prasad, Neetu E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C.; Bhatia, C. S.

    2014-09-15

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 10{sup 7 }A/cm{sup 2} has been obtained for SLG (1 × 2.5 μm{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  15. Characterisation of epitaxial TiO 2 thin films grown on MgO(0 0 1) using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Mitchell, D. R. G.; Attard, D. J.; Triani, G.

    2005-11-01

    Thin films of TiO 2 have been deposited onto MgO(0 0 1) substrates using atomic layer deposition at 300 °C. Plan and cross-sectional transmission electron microscopy (TEM), X-ray diffraction and atomic force microscopy have been used to understand the nature of the films. X-ray and electron diffraction showed that a polycrystalline, epitaxial anatase film was produced. The c-axis of the anatase was parallel to the MgO(0 0 1) surface with two orientational variants at right angles to each other in the plane of the film, each aligned with an MgO cube axis. Plan-view and cross-sectional TEM showed that the grain structure of the film reflected this orientation relationship, with the grain morphology comprising two sets of roughly tetragonal grains. Also present was a small fraction of equiaxed, anatase grains which were randomly oriented. Roughness measurement using atomic force microscopy showed that the epitaxial anatase films were quite smooth, in comparison to equivalent non-aligned films grown on silicon.

  16. [Effect of low nocturnal temperature stress on fluorescence characteristics and active oxygen metabolism in leaves of Garcinia hanburyi seedlings grown under two levels of irradiance].

    PubMed

    Cai, Zhiquan; Cao, Kunfang; Feng, Yulong; Feng, Zhili

    2003-03-01

    The fluorescence characteristics and active oxygen metabolism in leaves in Garcinia hanburyi seedlings grown under two irradiance levels (50% and 8% of full natural sunlight) and nocturnal low temperature (4 degrees C) were studied in Xishuangbanna. The results showed that the photochemical efficiency of PS II (Fv/Fm), the quantum yield of PS II linear electron transport (phi PS II) and non-photochemical quenching (NPQ) were decreased, but the initial fluorescence yield (F0) were increased with prolonged stress time of low temperature in leaves of Garcinia hanburyi grown under the two different irradiance levels. After three days of recovery treatment, the Fv/Fm and F0 of Garcinia hanburyi grown under 50% natural irradiance were not recovered completely, while those of the seedlings grown in 8% natural irradiance were recovered almost completely, which indicated that the photosynthetic apparatus of Garcinia hanburyi grown under 50% irradiance was injured by photooxidation, but that of seedlings grown in 8% irradiance was only reversibly inactivated by the nocturnal low temperature stress. In the mean time, although the activities of protective enzymes (SOD, CAT, and APX) increased, the O2-. production rate and H2O2 content also increased with the duration of the stress. The MDA also accumulated in leaves of Garcinia hanburyi grown under two different irradiance levels. After three day's recovery, much less active oxygen was produced in leaves of Garcinia hanburyi grown under 8% than that under 50% irradiance. The implication of the results for practice were also discussed.

  17. Optical activity of transparent polymer layers characterized by spectral means

    NASA Astrophysics Data System (ADS)

    Cosutchi, Andreea Irina; Dimitriu, Dan Gheorghe; Zelinschi, Carmen Beatrice; Breaban, Iuliana; Dorohoi, Dana Ortansa

    2015-06-01

    The method based on the channeled spectrum, validated for inorganic optical active layers, is used now to determine the optical activity of some transparent polymer solutions in different solvents. The circular birefringence, the dispersion parameter and the specific rotation were estimated in the visible range by using the measurements of wavelengths in the channeled spectra of Hydroxypropyl cellulose in water, methanol and acetic acid. The experiments showed the specific rotation dependence on the polymer concentration and also on the solvent nature. The decrease of the specific rotation in the visible range with the increase in wavelength was evidenced. The method has some advantages as the rapidity of the experiments and the large spectral range in which it can be applied. One disadvantage is the fact that the channeled spectrum does not allow to establish the rotation sense of the electric field intensity.

  18. Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

    SciTech Connect

    Hiraiwa, Atsushi E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-07

    The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of

  19. Active Flow Control on a Boundary-Layer-Ingesting Inlet

    NASA Technical Reports Server (NTRS)

    Gorton, Susan Althoff; Owens, Lewis R.; Jenkins, Luther N.; Allan, Brian G.; Schuster, Ernest P.

    2004-01-01

    Boundary layer ingestion (BLI) is explored as means to improve overall system performance for Blended Wing Body configuration. The benefits of BLI for vehicle system performance benefit are assessed with a process derived from first principles suitable for highly-integrated propulsion systems. This performance evaluation process provides framework within which to assess the benefits of an integrated BLI inlet and lays the groundwork for higher-fidelity systems studies. The results of the system study show that BLI provides a significant improvement in vehicle performance if the inlet distortion can be controlled, thus encouraging the pursuit of active flow control (AFC) as a BLI enabling technology. The effectiveness of active flow control in reducing engine inlet distortion was assessed using a 6% scale model of a 30% BLI offset, diffusing inlet. The experiment was conducted in the NASA Langley Basic Aerodynamics Research Tunnel with a model inlet designed specifically for this type of testing. High mass flow pulsing actuators provided the active flow control. Measurements were made of the onset boundary layer, the duct surface static pressures, and the mass flow through the duct and the actuators. The distortion was determined by 120 total pressure measurements located at the aerodynamic interface plane. The test matrix was limited to a maximum freestream Mach number of 0.15 with scaled mass flows through the inlet for that condition. The data show that the pulsed actuation can reduce distortion from 29% to 4.6% as measured by the circumferential distortion descriptor DC60 using less than 1% of inlet mass flow. Closed loop control of the actuation was also demonstrated using a sidewall surface static pressure as the response sensor.

  20. In situ derivation of sulfur activated TiO{sub 2} nano porous layers through pulse-micro arc oxidation technology

    SciTech Connect

    Bayati, M.R.; Golestani-Fard, F.; Moshfegh, A.Z.; Molaei, Roya

    2011-10-15

    Highlights: {yields} S-TiO{sub 2} layers were grown by MAO technique under pulse current for the first time. {yields} Effect of growth parameters on chemical composition, topography, and morphology of the layers was studied. {yields} A correlation between photocatalytic performance and growth conditions was proposed. -- Abstract: Micro arc oxidation technique, as a facile and efficient process, was employed to grow sulfur doped titania porous layers. This research sheds light on the photocatalytic performance of the micro arc oxidized S-TiO{sub 2} nano-porous layers fabricated under pulse current. Morphological and topographical studies, performed by SEM and AFM techniques, revealed that increasing the frequency and/or decreasing the duty cycle resulted in formation of finer pores and smoother surfaces. XRD and XPS results showed that the layers consisted of anatase and rutile phases whose fraction was observed to change depending on the synthesis conditions. The highest anatase relative content was obtained at the frequency of 500 Hz and the duty cycle of 5%. Furthermore, photocatalytic activity of the layers was examined by measuring the decomposition rate of methylene blue under both ultraviolet and visible photo irradiations. Maximum photodegradation reaction rate constants over the pulse-grown S-TiO{sub 2} layers were respectively measured as 0.0202 and 0.0110 min{sup -1} for ultraviolet and visible irradiations.

  1. Active layer thermal monitoring at Fildes Peninsula, King George Island, Maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, Roberto; Schaefer, Carlos; Simas, Felipe; Pregesbauer, Michael; Bockheim, James

    2013-04-01

    International attention on the climate change phenomena has grown in the last decade, intense modelling of climate scenarios were carried out by scientific investigations searching the sources and trends of these changes. The cryosphere and its energy flux became the focus of many investigations, being recognised as a key element for the understanding of future trends. The active layer and permafrost are key components of the terrestrial cryosphere due to their role in energy flux regulation and high sensitivity to climate change (Kane et al., 2001; Smith and Brown, 2009). Compared with other regions of the globe, our understanding of Antarctic permafrost is poor, especially in relation to its thermal state and evolution, its physical properties, links to pedogenesis, hydrology, geomorphic dynamics and response to global change (Bockheim, 1995, Bockheim et al., 2008). The active layer monitoring site was installed in the summer of 2008, and consist of thermistors (accuracy ± 0.2 °C) arranged in a vertical array (Turbic Eutric Cryosol 600 m asl, 10.5 cm, 32.5 cm, 67.5 cm and 83.5 cm). King George Island experiences a cold moist maritime climate characterized by mean annual air temperatures of -2°C and mean summer air temperatures above 0°C for up to four months (Rakusa-Suszczewski et al., 1993, Wen et al., 1994). Ferron et al., (2004) found great variability when analysing data from 1947 to1995 and identified cycles of 5.3 years of colder conditions followed by 9.6 years of warmer conditions. All probes were connected to a Campbell Scientific CR 1000 data logger recording data at hourly intervals from March 1st 2008 until November 30th 2012. Meteorological data for Fildes was obtained from the near by stations. We calculated the thawing days, freezing days; thawing degree days and freezing degree days; all according to Guglielmin et al. (2008). The active lawyer thickness was calculated as the 0 °C depth by extrapolating the thermal gradient from the two

  2. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  3. As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS

    SciTech Connect

    Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert; Baer, Donald R.

    2012-06-27

    In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2 kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.

  4. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Dueñas, S.; Castán, H.; García, H.; San Andrés, E.; Toledano-Luque, M.; Mártil, I.; González-Díaz, G.; Kukli, K.; Uustare, T.; Aarik, J.

    2005-10-01

    Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O2 at temperatures ranging from 600 to 900 °C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 °C from TiCl4 or Ti(OC2H5)4, and annealed at 750 °C in O2, has been studied on silicon substrates. Our attention has been focused on the interfacial state and disordered-induced gap state densities. From our results, HPRS films annealed at 900 °C in oxygen atmosphere exhibit the best characteristics, with Dit density being the lowest value measured in this work (5-6 × 1011 cm-2 eV-1), and undetectable conductance transients within our experimental limits. This result can be due to two contributions: the increase of the SiO2 film thickness and the crystallinity, since in the films annealed at 900 °C rutile is the dominant crystalline phase, as revealed by transmission electron microscopy and infrared spectroscopy. In the case of annealing in the range of 600-800 °C, anatase and rutile phases coexist. Disorder-induced gap state (DIGS) density is greater for 700 °C annealed HPRS films than for 750 °C annealed ALD TiO2 films, whereas 800 °C annealing offers DIGS density values similar to ALD cases. For ALD films, the studies clearly reveal the dependence of trap densities on the chemical route used.

  5. Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers

    NASA Astrophysics Data System (ADS)

    Mchedlidze, Teimouraz; Matsumoto, Kei; Asano, Eiichi

    1999-06-01

    Majority and minority carrier traps introduced in p-type Czochralski-grown silicon (CZ-Si) wafers during two-step low-high temperature annealing procedures were investigated using deep level transient spectroscopy (DLTS). It was determined that the platelike silicon oxide precipitate surface and the punch-out dislocations introduce majority carrier traps having deep energy levels (EV+0.43 eV and EV+0.26 eV, repectively) in the Si band gap in concentrations proportional to the relevant defect density. The minority carrier traps are positioned at EC-0.42 eV and EC-0.22 eV. The majority carrier trap density on the surface of the platelikeprecipitate was estimated as ˜3×109 cm-2 and thelinear trap density for the punch-out dislocations as ˜ 4×104 cm-1.

  6. Characterization of cathode keeper wear by surface layer activation

    NASA Technical Reports Server (NTRS)

    Polk, James E.

    2003-01-01

    In this study, the erosion rates of the discharge cathode keeper in a 30 cm NSTAR configuration ion thruster were measured using a technique known as Surface Layer Activation (SLA). This diagnostic technique involves producing a radioactive tracer in a given surface by bombardment with high energy ions. The decrease in activity of the tracer material may be monitored as the surface is subjected to wear processes and correlated to a depth calibration curve, yielding the eroded depth. Analysis of the activities was achieved through a gamma spectroscopy system. The primary objectives of this investigation were to reproduce erosion data observed in previous wear studies in order to validate the technique, and to determine the effect of different engine operating parameters on erosion rate. The erosion profile at the TH 15 (23 kw) setting observed during the 8200 hour Life Demonstration Test (LDT) was reproduced. The maximum keeper erosion rate at this setting was determined to be 0.085 pm/hr. Testing at the TH 8 (1.4 kw) setting demonstrated lower erosion rates than TH 15, along with a different wear profile. Varying the keeper voltage was shown to have a significant effect on the erosion, with a positive bias with respect to cathode potential decreasing the erosion rate significantly. Accurate measurements were achieved after operating times of only 40 to 70 hours, a significant improvement over other erosion diagnostic methods.

  7. High-performance hybrid (electrostatic double-layer and faradaic capacitor-based) polymer actuators incorporating nickel oxide and vapor-grown carbon nanofibers.

    PubMed

    Terasawa, Naohiro; Asaka, Kinji

    2014-12-01

    The electrochemical and electromechanical properties of polymeric actuators prepared using nickel peroxide hydrate (NiO2·xH2O) or nickel peroxide anhydride (NiO2)/vapor-grown carbon nanofibers (VGCF)/ionic liquid (IL) electrodes were compared with actuators prepared using solely VGCFs or single-walled carbon nanotubes (SWCNTs) and an IL. The electrode in these actuator systems is equivalent to an electrochemical capacitor (EC) exhibiting both electrostatic double-layer capacitor (EDLC)- and faradaic capacitor (FC)-like behaviors. The capacitance of the metal oxide (NiO2·xH2O or NiO2)/VGCF/IL electrode is primarily attributable to the EDLC mechanism such that, at low frequencies, the strains exhibited by the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators primarily result from the FC mechanism. The VGCFs in the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators strengthen the EDLC mechanism and increase the electroconductivity of the devices. The mechanism underlying the functioning of the NiO2·xH2O/VGCF/IL actuator in which NiO2·xH2O/VGCF = 1.0 was found to be different from that of the devices produced using solely VGCFs or SWCNTs, which exhibited only the EDLC mechanism. In addition, it was found that both NiO2 and VGCFs are essential with regard to producing actuators that are capable of exhibiting strain levels greater than those of SWCNT-based polymer actuators and are thus suitable for practical applications. Furthermore, the frequency dependence of the displacement responses of the NiO2·xH2O/VGCF and NiO2/VGCF polymer actuators were successfully simulated using a double-layer charging kinetic model. This model, which accounted for the oxidization and reduction reactions of the metal oxide, can also be applied to SWCNT-based actuators. The results of electromechanical response simulations for the NiO2·xH2O/VGCF and NiO2/VGCF actuators predicted the strains at low frequencies as well as the time constants of the devices, confirming that the model is applicable

  8. Reduced phenylalanine ammonia-lyase and tyrosine ammonia-lyase activities and lignin synthesis in wheat grown under low pressure sodium lamps

    NASA Technical Reports Server (NTRS)

    Guerra, D.; Anderson, A. J.; Salisbury, F. B.

    1985-01-01

    Wheat (Triticum aestivum L. cv Fremont) grown in hydroponic culture under 24-hour continuous irradiation at 560 to 580 micromoles per square meter per second from either metalhalide (MH), high pressure sodium (HPS), or low pressure sodium (LPS) lamps reached maturity in 70 days. Grain yields were similar under all three lamps, although LPS-grown plants lodged at maturity. Phenylalanine ammonia-lyase (PAL) and a tyrosine ammonia lyase (TAL) with lesser activity were detected in all extracts of leaf, inflorescence, and stem. Ammonia-lyase activities increased with age of the plant, and plants grown under the LPS lamp displayed PAL and TAL activities lower than wheat cultured under MH and HPS radiation. Greenhouse solar-grown wheat had the highest PAL and TAL activities. Lignin content of LPS-grown wheat was also significantly reduced from that of plants grown under MH or HPS lamps or in the greenhouse, showing a correlation with the reduced PAL and TAL activities. Ratios of far red-absorbing phytochrome to total phytochrome were similar for all three lamps, but the data do not yet warrant a conclusion about specific wavelengths missing from the LPS lamps that might have induced PAL and TAL activities in plants under the other lamps.

  9. Liquid-phase exfoliation of chemical vapor deposition-grown single layer graphene and its application in solution-processed transparent electrodes for flexible organic light-emitting devices

    SciTech Connect

    Wu, Chaoxing; Li, Fushan E-mail: gtl-fzu@hotmail.com; Wu, Wei; Chen, Wei; Guo, Tailiang E-mail: gtl-fzu@hotmail.com

    2014-12-15

    Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (∼8 Ω/□), high transmittance (∼81% at 550 nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.

  10. Activation-efficiency modeling of silicon-ion implantation in undoped, LEC-grown GaAs

    SciTech Connect

    Bindal, A.

    1988-01-01

    Constructing an accurate GaAs MESFET modeling largely depends on a complete understanding of material properties by various characterization technique sand being able to obtain reproducible device parameters. In this work, the implanted material was evaluated with respect to various implantation and annealing conditions in detail. In investigating the activation efficiency of implanted silicon in LEC-grown GaAs, atomic and carrier distributions of the implant were obtained using Secondary Ion Mass Spectroscopy (SIMS), the conventional and steo-etch C-V techniques, respectively. Based on these experimental observations, the Si activation efficiency is found to be strong functions of the implantation fluence and annealing temperature, and weak functions of the implantation energy and annealing time. In understanding the effects of various implantation and annealing conditions on Si activation, the second part of this work is devoted to Photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) experiments. The shallow defects were investigated by photoluminescence experiments.

  11. Fruit quality, anthocyanin and total phenolic contents, and antioxidant activities of 45 blueberry cultivars grown in Suwon, Korea

    PubMed Central

    Kim, Jin Gook; Kim, Hong Lim; Kim, Su Jin; Park, Kyo-Sun

    2013-01-01

    Blueberry fruits from 45 commercial cultivars (39 northern highbush and 6 half highbush blueberry) grown in Suwon, Korea were analyzed for fruit size, soluble solids content, titratable acidity, total anthocyanin content, total phenolic content, and antioxidant activity. Fruit characteristics varied widely among the 45 blueberry cultivars. Fruit weight ranged from 0.9 to 3.6 g, soluble solids content from 8.3 to 14.3 °Brix, and titratable acidity from 0.8% to 3.6%. Antioxidant activity ranged from 0.7 to 2.1 mg of quercetin equivalents per gram of fresh berries in different blueberry cultivars. Among the 45 blueberry cultivars, high amounts of anthocyanins and polyphenols, and high antioxidant activity were observed in ‘Elliott’, ‘Rubel’, ‘Rancocas’, and ‘Friendship’. PMID:24009199

  12. Temperature dependence of threading dislocation density in In 0.2Ga 0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Takano, Y.; Kobayashi, K.; Shirakata, S.; Umezawa, M.; Fuke, S.

    2005-08-01

    In 0.2Ga 0.8As layers were grown on GaAs substrates with graded buffer layers by metalorganic vapor phase epitaxy at 370-630 °C. Good surface morphology with a crosshatch pattern (CHP) was obtained at 600 and 630 °C. Transmission electron microscopy (TEM) observation confirmed that the cap layers had a threading dislocation density of between 1.3 and 2.0×10 6 cm -2. At 500 °C, a layer showed a rough surface morphology. Phase separation was revealed by TEM. The threading dislocation density was over 1×10 7 cm -2 at 500 °C. Good surface morphology with a CHP was obtained at 430, 450 and 480 °C. A layer grown at 430 °C showed the lowest threading dislocation density of 2.5×10 5 cm -2. Low temperature growth was effective for lowering the threading dislocation density in the cap layers.

  13. Deep levels in a-plane, high Mg-content Mg{sub x}Zn{sub 1-x}O epitaxial layers grown by molecular beam epitaxy

    SciTech Connect

    Guer, Emre; Tabares, G.; Hierro, A.; Chauveau, J. M.

    2012-12-15

    Deep level defects in n-type unintentionally doped a-plane Mg{sub x}Zn{sub 1-x}O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg{sub x}Zn{sub 1-x}O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E{sub c} - 1.4 eV, 2.1 eV, 2.6 V, and E{sub v} + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E{sub c} - 2.1 eV, E{sub v} + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E{sub v} + 0.3 eV and E{sub c} - 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E{sub v} + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E{sub c} - 1.4 eV and E{sub c} - 2.6 eV levels in Mg alloyed samples.

  14. Hydrogen Production and Enzyme Activities in the Hyperthermophile Thermococcus paralvinellae Grown on Maltose, Tryptone, and Agricultural Waste.

    PubMed

    Hensley, Sarah A; Moreira, Emily; Holden, James F

    2016-01-01

    Thermococcus may be an important alternative source of H2 in the hot subseafloor in otherwise low H2 environments such as some hydrothermal vents and oil reservoirs. It may also be useful in industry for rapid agricultural waste treatment and concomitant H2 production. Thermococcus paralvinellae grown at 82°C without sulfur produced up to 5 mmol of H2 L(-1) at rates of 5-36 fmol H2 cell(-1) h(-1) on 0.5% (wt vol(-1)) maltose, 0.5% (wt vol(-1)) tryptone, and 0.5% maltose + 0.05% tryptone media. Two potentially inhibiting conditions, the presence of 10 mM acetate and low pH (pH 5) in maltose-only medium, did not significantly affect growth or H2 production. Growth rates, H2 production rates, and cell yields based on H2 production were the same as those for Pyrococcus furiosus grown at 95°C on the same media for comparison. Acetate, butyrate, succinate, isovalerate, and formate were also detected as end products. After 100 h, T. paralvinellae produced up to 5 mmol of H2 L(-1) of medium when grown on up to 70% (vol vol(-1)) waste milk from cows undergoing treatment for mastitis with the bacterial antibiotic Ceftiofur and from untreated cows. The amount of H2 produced by T. paralvinellae increased with increasing waste concentrations, but decreased in P. furiosus cultures supplemented with waste milk above 1% concentration. All mesophilic bacteria from the waste milk that grew on Luria Bertani, Sheep's Blood (selective for Staphylococcus, the typical cause of mastitis), and MacConkey (selective for Gram-negative enteric bacteria) agar plates were killed by heat during incubation at 82°C. Ceftiofur, which is heat labile, was below the detection limit following incubation at 82°C. T. paralvinellae also produced up to 6 mmol of H2 L(-1) of medium when grown on 0.1-10% (wt vol(-1)) spent brewery grain while P. furiosus produced < 1 mmol of H2 L(-1). Twelve of 13 enzyme activities in T. paralvinellae showed significant (p < 0.05) differences across six different growth

  15. Hydrogen Production and Enzyme Activities in the Hyperthermophile Thermococcus paralvinellae Grown on Maltose, Tryptone, and Agricultural Waste

    PubMed Central

    Hensley, Sarah A.; Moreira, Emily; Holden, James F.

    2016-01-01

    Thermococcus may be an important alternative source of H2 in the hot subseafloor in otherwise low H2 environments such as some hydrothermal vents and oil reservoirs. It may also be useful in industry for rapid agricultural waste treatment and concomitant H2 production. Thermococcus paralvinellae grown at 82°C without sulfur produced up to 5 mmol of H2 L−1 at rates of 5–36 fmol H2 cell−1 h−1 on 0.5% (wt vol−1) maltose, 0.5% (wt vol−1) tryptone, and 0.5% maltose + 0.05% tryptone media. Two potentially inhibiting conditions, the presence of 10 mM acetate and low pH (pH 5) in maltose-only medium, did not significantly affect growth or H2 production. Growth rates, H2 production rates, and cell yields based on H2 production were the same as those for Pyrococcus furiosus grown at 95°C on the same media for comparison. Acetate, butyrate, succinate, isovalerate, and formate were also detected as end products. After 100 h, T. paralvinellae produced up to 5 mmol of H2 L−1 of medium when grown on up to 70% (vol vol−1) waste milk from cows undergoing treatment for mastitis with the bacterial antibiotic Ceftiofur and from untreated cows. The amount of H2 produced by T. paralvinellae increased with increasing waste concentrations, but decreased in P. furiosus cultures supplemented with waste milk above 1% concentration. All mesophilic bacteria from the waste milk that grew on Luria Bertani, Sheep's Blood (selective for Staphylococcus, the typical cause of mastitis), and MacConkey (selective for Gram-negative enteric bacteria) agar plates were killed by heat during incubation at 82°C. Ceftiofur, which is heat labile, was below the detection limit following incubation at 82°C. T. paralvinellae also produced up to 6 mmol of H2 L−1 of medium when grown on 0.1–10% (wt vol−1) spent brewery grain while P. furiosus produced < 1 mmol of H2 L−1. Twelve of 13 enzyme activities in T. paralvinellae showed significant (p < 0.05) differences across six different

  16. Hydrogen Production and Enzyme Activities in the Hyperthermophile Thermococcus paralvinellae Grown on Maltose, Tryptone, and Agricultural Waste.

    PubMed

    Hensley, Sarah A; Moreira, Emily; Holden, James F

    2016-01-01

    Thermococcus may be an important alternative source of H2 in the hot subseafloor in otherwise low H2 environments such as some hydrothermal vents and oil reservoirs. It may also be useful in industry for rapid agricultural waste treatment and concomitant H2 production. Thermococcus paralvinellae grown at 82°C without sulfur produced up to 5 mmol of H2 L(-1) at rates of 5-36 fmol H2 cell(-1) h(-1) on 0.5% (wt vol(-1)) maltose, 0.5% (wt vol(-1)) tryptone, and 0.5% maltose + 0.05% tryptone media. Two potentially inhibiting conditions, the presence of 10 mM acetate and low pH (pH 5) in maltose-only medium, did not significantly affect growth or H2 production. Growth rates, H2 production rates, and cell yields based on H2 production were the same as those for Pyrococcus furiosus grown at 95°C on the same media for comparison. Acetate, butyrate, succinate, isovalerate, and formate were also detected as end products. After 100 h, T. paralvinellae produced up to 5 mmol of H2 L(-1) of medium when grown on up to 70% (vol vol(-1)) waste milk from cows undergoing treatment for mastitis with the bacterial antibiotic Ceftiofur and from untreated cows. The amount of H2 produced by T. paralvinellae increased with increasing waste concentrations, but decreased in P. furiosus cultures supplemented with waste milk above 1% concentration. All mesophilic bacteria from the waste milk that grew on Luria Bertani, Sheep's Blood (selective for Staphylococcus, the typical cause of mastitis), and MacConkey (selective for Gram-negative enteric bacteria) agar plates were killed by heat during incubation at 82°C. Ceftiofur, which is heat labile, was below the detection limit following incubation at 82°C. T. paralvinellae also produced up to 6 mmol of H2 L(-1) of medium when grown on 0.1-10% (wt vol(-1)) spent brewery grain while P. furiosus produced < 1 mmol of H2 L(-1). Twelve of 13 enzyme activities in T. paralvinellae showed significant (p < 0.05) differences across six different growth

  17. Purification and characterization of an enzyme that has dihydroxyacetone-reducing activity from methanol-grown Hansenula ofunaensis.

    PubMed

    Yamada-Onodera, K; Ono, K; Tani, Y

    1999-01-01

    An intracellular enzyme having reduction activity towards dihydroxyacetone (DHA), and that was induced by DHA, was purified and characterized from a methanol-grown yeast, Hansenula ofunaensis. After harvesting cells grown in a 1% methanol medium until the early stationary phase, the enzyme was purified through ammonium sulfate fractination and a series of ion-exchange, hydrophobic, and gel-filtration column chromatographies. SDS-PAGE and HPLC showed the enzyme to be a homo dimer composed of two identical subunits, each with a molecular mass of 38 kDa. The optimum pHs for DHA reduction and glycerol oxidation were 6.0 and 7.0, respectively. The optimum temperature for enzyme activity was 55 degrees C. The enzyme reduced several other compounds, including acetaldehyde, acetol, 2-butanone and 3-methyl-2-butanone, more effectively than it did DHA, while its oxidation activity was higher towards ethanol, 2-propanol, 1,2-propanediol, 2,3-butanediol and 1,3-butanediol than towards glycerol. The K(m) values for DHA in reduction and glycerol in oxidation were 430 mM and 4 M, respectively. The K(m) values for DHA in reduction and glycerol in oxidation were 430 mM and 4 M, respectively. The purified enzyme had high K(m) values for glycerol and DHA and low K(m) values for 2-butanol and butanone, although physiologically it had a role in DHA metabolism. There were similarities between the purified enzyme and sec-alcohol dehydrogenases reported previously in their behavior towards inhibitors and metal ions, as well as in their K(m) values for 2-butanol and 2-butanone, but differences in their subunit molecular masses and activities for ethanol. At pH 9.8, the oxidative activity of the purified enzyme for l-2-butanol was about eleven times higher than that for d-2-butanol.

  18. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kaun, Stephen W.; Mazumder, Baishakhi; Fireman, Micha N.; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

    2015-05-01

    When grown at a high temperature (820 °C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (∼0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 °C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Ω/□, respectively.

  19. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    SciTech Connect

    Hazra, Purnima; Singh, Satyendra Kumar; Jit, Satyabrata

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the

  20. Antimicrobial and cytotoxic activity of Marrubium alysson and Retama raetam grown in Tunisia.

    PubMed

    Hayet, Edziri; Samia, Ammar; Patrick, Groh; Ali, Mahjoub Mohamed; Maha, Mastouri; Laurent, Gutmann; Mighri, Zine; Mahjoub, Laouni

    2007-05-15

    Antibacterial and antifungal activities of extracts obtained from M. alysson, R. raetam were tested using a solid medium technique. We showed that the petroleum ether extract of M. alysson had a Minimum Inhibitory Concentration (MIC) varied from 128 to 2000 microg mL(-1) against different Enterobacteriaceae and antifungal activity against Candida glabrata, Candida albicans, Candida parapsilosis and Candida kreusei with a MIC of 256 microg mL(-1). The ethyl acetate extract of R. raetam showed the best activity against Gram positive organisms with MICs of 128 to 256 microg mL(-1) against methicillin resistant Staphylococcus aureus but low activity against the different Candida species.

  1. Towards NOAA Forecasts of Permafrost Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Livezey, M. M.; Jonassen, R. G.; Horsfall, F. M. C.; Jafarov, E. E.; Schaefer, K. M.

    2014-12-01

    NOAA's implementation of its 2014 Arctic Action Plan (AAP) lacks services related to permafrost change yet the Interagency Working Group on Coordination of Domestic Energy Development and Permitting in Alaska noted that warming permafrost challenges land-based development and calls for agencies to provide focused information needed by decision-makers. To address this we propose to link NOAA's existing seasonal forecasts of temperature and precipitation with a high-resolution model of the thermal state of permafrost (Jafarov et al., 2012) to provide near-term (one year ahead) forecasts of active layer thickness (ALT). Such forecasts would be an official NOAA statement of the expected thermal state of permafrost ALT in Alaska and would require: (1) long-term climate outlooks, (2) a permafrost model, (3) detailed specification of local spatial and vertical controls upon soil thermal state, (4) high-resolution vertical measurements of that thermal state, and (5) demonstration of forecast skill in pilot studies. Pilot efforts should focus on oil pipelines where the cost can be justified. With skillful forecasts, engineers could reduce costs of monitoring and repair as well as ecosystem damage by positioning equipment to more rapidly respond to predicted disruptions.

  2. Active Layer Soil Carbon and Nutrient Mineralization, Barrow, Alaska, 2012

    DOE Data Explorer

    Stan D. Wullschleger; Holly M. Vander Stel; Colleen Iversen; Victoria L. Sloan; Richard J. Norby; Mallory P. Ladd; Jason K. Keller; Ariane Jong; Joanne Childs; Deanne J. Brice

    2015-10-29

    This data set consists of bulk soil characteristics as well as carbon and nutrient mineralization rates of active layer soils manually collected from the field in August, 2012, frozen, and then thawed and incubated across a range of temperatures in the laboratory for 28 day periods in 2013-2015. The soils were collected from four replicate polygons in each of the four Areas (A, B, C, and D) of Intensive Site 1 at the Next-Generation Ecosystem Experiments (NGEE) Arctic site near Barrow, Alaska. Soil samples were coincident with the established Vegetation Plots that are located in center, edge, and trough microtopography in each polygon. Data included are 1) bulk soil characteristics including carbon, nitrogen, gravimetric water content, bulk density, and pH in 5-cm depth increments and also by soil horizon, 2) carbon, nitrogen, and phosphorus mineralization rates for soil horizons incubated aerobically (and in one case both aerobically and anaerobically) for 28 days at temperatures that included 2, 4, 8, and 12 degrees C. Additional soil and incubation data are forthcoming. They will be available when published as part of another paper that includes additional replicate analyses.

  3. Active millimeter wave detection of concealed layers of dielectric material

    NASA Astrophysics Data System (ADS)

    Bowring, N. J.; Baker, J. G.; Rezgui, N. D.; Southgate, M.; Alder, J. F.

    2007-04-01

    Extensive work has been published on millimetre wave active and passive detection and imaging of metallic objects concealed under clothing. We propose and demonstrate a technique for revealing the depth as well as the outline of partially transparent objects, which is especially suited to imaging layer materials such as explosives and drugs. The technique uses a focussed and scanned FMCW source, swept through many GHz to reveal this structure. The principle involved is that a parallel sided dielectric slab produces reflections at both its upper and lower surfaces, acting as a Fabry-Perot interferometer. This produces a pattern of alternating reflected peaks and troughs in frequency space. Fourier or Burg transforming this pattern into z-space generates a peak at the thickness of the irradiated sample. It could be argued that though such a technique may work for single uniform slabs of dielectric material, it will give results of little or no significance when the sample both scatters the incident radiation and gives erratic reflectivities due to its non-uniform thickness and permittivity . We show results for a variety of materials such as explosive simulants, powder and drugs, both alone and concealed under clothing or in a rucksack, which display strongly directional reflectivities at millimeter wavelengths, and whose location is well displayed by a varying thickness parameter as the millimetre beam is scanned across the target. With this system we find that samples can easily be detected at standoff distances of at least 4.6m.

  4. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil`s physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  5. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil's physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  6. Effects of Soil Property Uncertainty on Projected Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Harp, D. R.; Atchley, A. L.; Coon, E.; Painter, S. L.; Wilson, C. J.; Romanovsky, V. E.; Liljedahl, A.

    2014-12-01

    Uncertainty in future climate is often assumed to contribute the largest uncertainty to active layer thickness (ALT) projections. However, the impact of soil property uncertainty on these projections may be significant. In this research, we evaluate the contribution of soil property uncertainty on ALT projections at the Barrow Environmental Observatory, Alaska. The effect of variations in porosity, thermal conductivity, saturation, and water retention properties of peat and mineral soil are evaluated. The micro-topography of ice wedge polygons present at the site is included in the analysis using three 1D column models to represent polygon center, rim and trough features. The Arctic Terrestrial Simulator (ATS) is used to model multiphase thermal and hydrological processes in the subsurface. We apply the Null-Space Monte Carlo (NSMC) algorithm to identify an ensemble of soil property combinations that produce simulated temperature profiles that are consistent with temperature measurements available from the site. ALT is simulated for the ensemble of soil property combinations for four climate scenarios. The uncertainty in ALT due to soil properties within and across climate scenarios is evaluated. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and Environmental Research in the DOE Office of Science.

  7. Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing

    NASA Astrophysics Data System (ADS)

    Melikhov, Y.; Konstantynov, P.; Domagala, J.; Sadowski, J.; Chernyshova, M.; Wojciechowski, T.; Syryanyy, Y.; Demchenko, I. N.

    2016-05-01

    The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a “lift-off” procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.

  8. Antibacterial and antioxidant activities in extracts of fully grown cladodes of 8 cultivars of cactus pear.

    PubMed

    Sánchez, E; Dávila-Aviña, J; Castillo, S L; Heredia, N; Vázquez-Alvarado, R; García, S

    2014-04-01

    The antimicrobial and antioxidant activities of some cultivars of the nopal cactus have not been determined. In this study, 8 cultivars of nopal cacti from Mexico were assayed for phenolic content, antioxidant activities, and antimicrobial activities against Campylobacter Jejuni, Vibrio cholera, and Clostridium Perfringens. Plant material was washed, dried, and macerated in methanol. Minimum bactericidal concentrations (MBCs) were determined using the broth microdilution method. Antioxidant activities were quantitatively determined using spectrophotometric methods. The MCBs of the nopal cacti ranged from 1.1 to 12.5 mg/mL for c. jejuni, 4.4 to 30 mg/mL for V. cholera, and 0.8 to 16 mg/mL for C. perfringens in the cultivars Cardon Blanco, Real de Catorce, and Jalpa, respectively. High quantities of total phenols and total flavonoids were found in the Jalpa cacti (3.80 mg of gallic acid equivalent GAE/g dry weight [DW] and 36.64 mg of quercetin equivalents [QE]/g DW, respectively). 2,2-Diphenyl-1-picrylhydrazyl (DPPH) radical scavenging activities (RSA) were correlated to bioactive compound contents. The Villanueva cacti had the highest %RSA at 42.31%, and the lowest activity was recorded in Copena V1 at 19.98%. In conclusion, we found that some of the 8 cactus pear cultivars studied may be used for their antioxidant compounds or antimicrobials to control or prevent the contamination of foods. PMID:24621296

  9. Antioxidant and Antiproliferative Activities of the Essential Oils from Thymbra capitata and Thymus Species Grown in Portugal

    PubMed Central

    Miguel, Maria Graça; Gago, Custódia; Antunes, Maria Dulce; Megías, Cristina; Cortés-Giraldo, Isabel; Vioque, Javier; Lima, A. Sofia; Figueiredo, A. Cristina

    2015-01-01

    The antioxidant and antiproliferative activities of the essential oils from Thymbra capitata and Thymus species grown in Portugal were evaluated. Thymbra and Thymus essential oils were grouped into two clusters: Cluster I in which carvacrol, thymol, p-cymene, α-terpineol, and γ-terpinene dominated and Cluster II in which thymol and carvacrol were absent and the main constituent was linalool. The ability for scavenging ABTS•+ and peroxyl free radicals as well as for preventing the growth of THP-1 leukemia cells was better in essential oils with the highest contents of thymol and carvacrol. These results show the importance of these two terpene-phenolic compounds as antioxidants and cytotoxic agents against THP-1 cells. PMID:26229547

  10. Antioxidant and Antiproliferative Activities of the Essential Oils from Thymbra capitata and Thymus Species Grown in Portugal.

    PubMed

    Miguel, Maria Graça; Gago, Custódia; Antunes, Maria Dulce; Megías, Cristina; Cortés-Giraldo, Isabel; Vioque, Javier; Lima, A Sofia; Figueiredo, A Cristina

    2015-01-01

    The antioxidant and antiproliferative activities of the essential oils from Thymbra capitata and Thymus species grown in Portugal were evaluated. Thymbra and Thymus essential oils were grouped into two clusters: Cluster I in which carvacrol, thymol, p-cymene, α-terpineol, and γ-terpinene dominated and Cluster II in which thymol and carvacrol were absent and the main constituent was linalool. The ability for scavenging ABTS(•+) and peroxyl free radicals as well as for preventing the growth of THP-1 leukemia cells was better in essential oils with the highest contents of thymol and carvacrol. These results show the importance of these two terpene-phenolic compounds as antioxidants and cytotoxic agents against THP-1 cells. PMID:26229547

  11. Antioxidant activity and polyphenol content in cultivated and wild edible fruits grown in Panama

    PubMed Central

    Murillo, Enrique; Britton, Gabrielle B.; Durant, Armando A.

    2012-01-01

    Objectives: The present research was undertaken to determine the antioxidant activity and total polyphenol content of cultivated and wild edible fruits consumed in Panama. Materials and Methods: 39 cultivated and wild edible fruits antioxidant activity and total polyphenol content was assessed by using the DPPH and the Folin-Ciocalteu assays, respectively. Results and Discussion: The antioxidant composition of the fruits varied between 1083.33 and 16.22 mg TEAC/100 g fresh weight. On the other hand, the total phenolic content of the 39 fruits tested ranged from 604.80 to 35.10 mg GAE/100 g FW. Ziziphus mauritania presented the highest antioxidant activity and the largest phenolic content, whereas most fruits had a moderate TEAC value. Conclusion: Fruits polyphenol content was strongly correlated with antioxidant properties, which pointed out the important role of these compounds in the prevention of many types of cancer, neurological ailments, and cardiovascular diseases through diverse antioxidant mechanisms. PMID:23248565

  12. Chemotyping of diverse Eucalyptus species grown in Egypt and antioxidant and antibacterial activities of its respective essential oils.

    PubMed

    Salem, Mohamed Z M; Ashmawy, Nader A; Elansary, Hosam O; El-Settawy, Ahmed A

    2015-01-01

    The chemical composition of the essential oil from the leaves of Eucalyptus camaldulensis, Eucalyptus camaldulensis var. obtusa and Eucalyptus gomphocephala grown in northern Egypt was analysed by using GC-FID and GC-MS techniques. The antibacterial (agar disc diffusion and minimum inhibitory concentration methods) and antioxidant activities (2,2'-diphenypicrylhydrazyl) were examined. The main oils constituents were 1,8-cineole (21.75%), β-pinene (20.51%) and methyleugenol (6.10%) in E. camaldulensis; spathulenol (37.46%), p-cymene (17.20%) and crypton (8.88%) in E. gomphocephala; spathulenol (18.37%), p-cymene (19.38%) and crypton (16.91%) in E. camaldulensis var. obtusa. The essential oils from the leaves of Eucalyptus spp. exhibited considerable antibacterial activity against Gram-positive and Gram-negative bacteria. The values of total antioxidant activity were 70 ± 3.13%, 50 ± 3.34% and 84 ± 4.64% for E. camaldulensis, E. camaldulensis var. obtusa and E. gomphocephala, respectively. The highest antioxidant activity value of 84 ± 4.64% could be attributed to the high amount of spathulenol (37.46%).

  13. Chemotyping of diverse Eucalyptus species grown in Egypt and antioxidant and antibacterial activities of its respective essential oils.

    PubMed

    Salem, Mohamed Z M; Ashmawy, Nader A; Elansary, Hosam O; El-Settawy, Ahmed A

    2015-01-01

    The chemical composition of the essential oil from the leaves of Eucalyptus camaldulensis, Eucalyptus camaldulensis var. obtusa and Eucalyptus gomphocephala grown in northern Egypt was analysed by using GC-FID and GC-MS techniques. The antibacterial (agar disc diffusion and minimum inhibitory concentration methods) and antioxidant activities (2,2'-diphenypicrylhydrazyl) were examined. The main oils constituents were 1,8-cineole (21.75%), β-pinene (20.51%) and methyleugenol (6.10%) in E. camaldulensis; spathulenol (37.46%), p-cymene (17.20%) and crypton (8.88%) in E. gomphocephala; spathulenol (18.37%), p-cymene (19.38%) and crypton (16.91%) in E. camaldulensis var. obtusa. The essential oils from the leaves of Eucalyptus spp. exhibited considerable antibacterial activity against Gram-positive and Gram-negative bacteria. The values of total antioxidant activity were 70 ± 3.13%, 50 ± 3.34% and 84 ± 4.64% for E. camaldulensis, E. camaldulensis var. obtusa and E. gomphocephala, respectively. The highest antioxidant activity value of 84 ± 4.64% could be attributed to the high amount of spathulenol (37.46%). PMID:25421867

  14. Total antioxidant activity and fiber content of select Florida-grown tropical fruits.

    PubMed

    Mahattanatawee, Kanjana; Manthey, John A; Luzio, Gary; Talcott, Stephen T; Goodner, Kevin; Baldwin, Elizabeth A

    2006-09-20

    Fourteen tropical fruits from south Florida (red guava, white guava, carambola, red pitaya (red dragon), white pitaya (white dragon), mamey sapote, sapodilla, lychee, longan, green mango, ripe mango, green papaya, and ripe papaya) were evaluated for antioxidant activity, total soluble phenolics (TSP), total ascorbic acid (TAA), total dietary fiber (TDF), and pectin. ORAC (oxygen radical absorbance capacity) and DPPH (1,1-diphenyl-2-picrylhydrazyl, radical scavenging activity) assays were used to determine antioxidant activity. The TSP, ORAC, and DPPH ranged from 205.4 to 2316.7 g gallic acid equiv/g puree, <0.1 to 16.7 micromol Trolox equiv/g puree, and 2.1 to 620.2 microg gallic acid equiv/g puree, respectively. The TAA, TDF, and pectin ranged from 7.5 to 188.8 mg/100 g, 0.9 to 7.2 g/100 g, and 0.20 to 1.04 g/100 g, respectively. The antioxidant activities, TSP, TAA, TDF, and pectin were influenced by cultivar (papaya, guava, and dragon fruit) and ripening stage (papaya and/or mango). Antioxidant activity showed high correlations with levels of TSP compounds (r = 0.96) but low correlations with levels of ascorbic acid (r = 0.35 and 0.23 for ORAC and DPPH data, respectively). The antioxidant activities evaluated by both ORAC and DPPH showed similar trends where red guava and carambola exhibited the highest and sapodilla and green papaya exhibited the lowest levels. Guava and mamey sapote exhibited the highest TDF and pectin levels. Many of the tropical fruits were shown to contain an abundance of hydrolyzable tannins, ellagic acid conjugates, and flavone glycosides. Preliminary descriptions are given of the phenols in red/white pitaya (dragonfruit), lychee, and mamey sapote, these fruit being thus far uncharacterized in the literature.

  15. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  16. Antimycobacterial activity of constituents from Foeniculum vulgare var. dulce grown in Mexico.

    PubMed

    Esquivel-Ferriño, Patricia C; Favela-Hernández, Juan Manuel J; Garza-González, Elvira; Waksman, Noemí; Ríos, María Yolanda; del Rayo Camacho-Corona, María

    2012-07-13

    Bioassay guided fractionation of an antimycobacterial extract of Foeniculum vulgare var dulce (Apiaceae) led to the isolation and characterization of 5-hydroxyfurano-coumarin. The chemical structure of this compound was elucidated by 1H and 13C (1D and 2D) Nuclear Magnetic Resonance (NMR) spectroscopy. In addition, the active fractions were analyzed by GC-MS and seventy eight compounds were identified; the major compounds were 1,3-benzenediol, 1-methoxycyclohexene, o-cymene, sorbic acid, 2-hydroxy-3-methyl-2-cyclopenten-1-one, estragole, limonene-10-ol and 3-methyl-2-cyclopenten-1-one. Twenty compounds identified in the active fractions were tested against one sensitive and three MDR strains of Mycobacterium tuberculosis using the Alamar Blue microassay. Compounds that showed some degree of antimycobacterial activity against all strains tested were the following: linoleic acid (MIC 100 µg/mL), oleic acid (MIC 100 µg/mL), 1,3-benzenediol (MIC 100-200 µg/mL), undecanal (MIC 50-200 µg/mL), and 2,4-undecadienal (MIC 25-50 µg/mL), the last being the most active compound. To our knowledge, this is the first report of the presence of 5-hydroxy-furanocoumarin in F. vulgare.

  17. In vitro activity of Aloe vera inner gel against microorganisms grown in planktonic and sessile phases.

    PubMed

    Cataldi, V; Di Bartolomeo, S; Di Campli, E; Nostro, A; Cellini, L; Di Giulio, M

    2015-12-01

    The failure of traditional antimicrobial treatments is becoming a worldwide problem. The use of Aloe vera is of particular interest for its role as curative agent and its efficacy in complementary therapies for a variety of illnesses. This study evaluated the antimicrobial activity of A. vera inner gel against a panel of microorganisms, Gram-positive and -negative bacteria, and Candida albicans. In addition to A. vera inner gel being used in the treatment of peptic ulcers, in dermatological treatments, and wound healing, it was also tested on the sessile phase of clinical Helicobacter pylori strains (including multi-drug-resistant strains) and on planktonic and sessile phase of Staphylococcus aureus/Pseudomonas aeruginosa clinical isolates from venous leg ulcers.A. vera inner gel expresses its prevalent activity against Gram-negative bacteria and C. albicans in respect to Gram-positive bacteria. The results of the A. vera antibiofilm activity showed a decrease of the produced biomass in a concentration-dependent-way, in each analyzed microorganism. The data obtained show that A. vera inner gel has both an antimicrobial and antibiofilm activity suggesting its potential use for the treatment of microbial infections, in particular for H. pylori gastric infection, especially in case of multi-drug-resistance, as well as for an effective wound dressing. PMID:26526205

  18. In vitro activity of Aloe vera inner gel against microorganisms grown in planktonic and sessile phases.

    PubMed

    Cataldi, V; Di Bartolomeo, S; Di Campli, E; Nostro, A; Cellini, L; Di Giulio, M

    2015-12-01

    The failure of traditional antimicrobial treatments is becoming a worldwide problem. The use of Aloe vera is of particular interest for its role as curative agent and its efficacy in complementary therapies for a variety of illnesses. This study evaluated the antimicrobial activity of A. vera inner gel against a panel of microorganisms, Gram-positive and -negative bacteria, and Candida albicans. In addition to A. vera inner gel being used in the treatment of peptic ulcers, in dermatological treatments, and wound healing, it was also tested on the sessile phase of clinical Helicobacter pylori strains (including multi-drug-resistant strains) and on planktonic and sessile phase of Staphylococcus aureus/Pseudomonas aeruginosa clinical isolates from venous leg ulcers.A. vera inner gel expresses its prevalent activity against Gram-negative bacteria and C. albicans in respect to Gram-positive bacteria. The results of the A. vera antibiofilm activity showed a decrease of the produced biomass in a concentration-dependent-way, in each analyzed microorganism. The data obtained show that A. vera inner gel has both an antimicrobial and antibiofilm activity suggesting its potential use for the treatment of microbial infections, in particular for H. pylori gastric infection, especially in case of multi-drug-resistance, as well as for an effective wound dressing.

  19. Antioxidant activity and total phenolic content of Boerhavia elegans (choisy) grown in Baluchestan, Iran

    PubMed Central

    Sadeghi, Zahra; Valizadeh, Jafar; Azyzian Shermeh, Omid; Akaberi, Maryam

    2015-01-01

    Objective: Boerhaavia elegans L. (Nyctaginaceae) is a medicinal plant used for the treatment of kidney disorders, urinary tract disorders and blood purification in Baluch tribe. The aim of present study is to evaluate the antioxidant property of B. elegans species for the first time. Materials and Methods: Different parts (leaf, stem and fruit) of the plant were extracted by using various solvents (water, methanol, chloroform and ethyl acetate) and evaluated for their antioxidant activity using DPPH (2, 2-diphenyl-1 picryl hydrazyl) and FRAP (ferric reducing antioxidant power) methods. In addition, total phenolic content was determined by Folin–Ciocalteu reagent. Results: Antioxidant results were expressed as IC50. The antioxidant power in DPPH and FRAP assay were evaluated as shown in decreasing order: Methanolic extract > Aqueous extract > Ethyl acetate extract > Chloroform extract, for all parts of the plant. In both methods of antioxidant assay and Folin-Ciocalteu method, methanolic extract of leaf exhibited the highest activity and the most phenolic content IC50= 6.85 ppm and 16.41 mg GA/g d w respectively. Total phenolic content had a positive relationship with antioxidant capacity in extracts and there was a high correlation (r=1.00, p<0.01) between antioxidant activities as determined by both antioxidant assays for various parts. Conclusion: The results of the experiments showed that B. elegans extract had significant antioxidant effects. This high antioxidant activity may be linked to phenolic contents of the plant but complementary investigations are suggested in order to determine active elements. PMID:25767751

  20. Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions

    SciTech Connect

    Venkatasubramanian, R.; Timmons, M.L.; Colpitts, T.S. ); Asher, S. )

    1992-09-01

    Heavily doped GaAs layers for high conductance GaAs tunnel junctions have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) using Zn as the dopant for the p[sup +] regions and either Se or Si as the dopant for the n[sup +] regions. At a growth temperature of 700[degrees]C using a [open quotes]cycled[close quotes] growth technique for the Zn-doped p[sup ++]-GaAs layer, both the conductance and the peak current density of the tunnel diode has been increased by a factor of [approximately]65 compared to a tunnel junction with a continuously grown Zn-doped p[sup +]-GaAs. The conductance of the tunnel junction, which is maximized at a growth temperature of 650[degrees]C using cycled growth, is comparable to the best reported values for tunnel junctions grown by molecular beam epitaxy. Cycled growths for n[sup +] Se-doped regions are found to reduce the conductance of a tunnel junction by more than two orders of magnitude. However, cycled growth for the n[sup +]-GaAs regions with Si doping show no conductance degradation. A model based on incorporation sites of these dopants during OMVPE growth of GaAs is presented to account for the experimental observations. 14 refs., 7 figs., 4 tabs.

  1. Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs

    NASA Astrophysics Data System (ADS)

    Ferrer, J. C.; Liliental-Weber, Z.; Reese, H.; Chiu, Y. J.; Hu, E.

    2000-07-01

    The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared to reference samples without LT GaAs. While the latter have As accumulation in the vicinity of these interfaces, the structures with LT layers display sharper oxide-GaAs interfaces with a reduced concentration of As. These results are explained in terms of the high Ga vacancy concentration in the LT GaAs and the possible influence of those vacancies in enhancing As diffusion away from the oxide-semiconductor interface.

  2. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  3. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    SciTech Connect

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-02-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis.

  4. Antioxidant capacity and antimutagenic activity of natural oleoresin from greenhouse grown tomatoes (Lycopersicon esculentum).

    PubMed

    Rodríguez-Muñoz, Eustolia; Herrera-Ruiz, Gilberto; Pedraza-Aboytes, Gustavo; Loarca-Piña, Guadalupe

    2009-03-01

    Natural oleoresins rich in lycopene were obtained from two varieties of tomato (Zedona and Gironda) and their nutraceutical potential (antioxidant and antimutagenic capacity) was evaluated. Both oleoresins had a high content of lycopene, 58.33+/-1.67 mg/g (Zedona) and 63.97+/-0.80 mg/g (Gironda). The antioxidant activity (AA) of the oleoresins by beta-carotene method were 56.4-74.5% (Zedona) and 51-72.8% (Gironda), while when using the free radical stable 2,2-diphenyl-picryl-hydrazyl (DPPH) method, the antiradical activity (ARA) was determined to be 18.2-32.7% (Zedona) and 16.6-26.7% (Gironda) for the concentrations tested that of 200-400 microM equivalents of lycopene. The antimutagenic activity of the oleoresins was tested against aflatoxin B1 (AFB1) using the microsuspension assay, both varieties had a very high antimutagenic potential against AFB1 (60-66%).These results suggest the NCRT can be taken advantage to obtaining rich oleoresin in lycopene with a nutraceutical value. PMID:19020978

  5. Antioxidant capacity and antimutagenic activity of natural oleoresin from greenhouse grown tomatoes (Lycopersicon esculentum).

    PubMed

    Rodríguez-Muñoz, Eustolia; Herrera-Ruiz, Gilberto; Pedraza-Aboytes, Gustavo; Loarca-Piña, Guadalupe

    2009-03-01

    Natural oleoresins rich in lycopene were obtained from two varieties of tomato (Zedona and Gironda) and their nutraceutical potential (antioxidant and antimutagenic capacity) was evaluated. Both oleoresins had a high content of lycopene, 58.33+/-1.67 mg/g (Zedona) and 63.97+/-0.80 mg/g (Gironda). The antioxidant activity (AA) of the oleoresins by beta-carotene method were 56.4-74.5% (Zedona) and 51-72.8% (Gironda), while when using the free radical stable 2,2-diphenyl-picryl-hydrazyl (DPPH) method, the antiradical activity (ARA) was determined to be 18.2-32.7% (Zedona) and 16.6-26.7% (Gironda) for the concentrations tested that of 200-400 microM equivalents of lycopene. The antimutagenic activity of the oleoresins was tested against aflatoxin B1 (AFB1) using the microsuspension assay, both varieties had a very high antimutagenic potential against AFB1 (60-66%).These results suggest the NCRT can be taken advantage to obtaining rich oleoresin in lycopene with a nutraceutical value.

  6. Total polyphenols and antioxidant activity in different species of apples grown in Georgia.

    PubMed

    Gogia, N; Gongadze, M; Bukia, Z; Esaiashvili, M; Chkhikvishvili, I

    2014-01-01

    Many studies have shown that biologically active components in plant-based foods, particularly phytochemicals, have important potential to modulate many processes in the development of diseases, including cancer, cardiovascular disease, diabetes, pulmonary disorders, Alzheimer's disease, and other degenerative diseases. The aim of the our study was to provide an updated understanding and analysis of various apple sorts growing in Georgia by the compounds with a particular focus on their potential role(s) in disease risk and general human health. The Various sorts (Kekhura, Banany, Golden, Starty, Chempion, Aidaridy, Brotsky, Achabety, Sinapy, Jonagold and Antonovka,) of apples were investigated. The total phenolic content and antioxidant activity were studied in peel and flesh extracts and were measured by slightly modified method of Folin-Denis using Folin-Ciocalteu reagent and - 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging method in those varieties of apples. Summarizing our data, we can conclude that, in accordance with the benefit to human health, the most prominent varieties of apples - Kekhura. It is rich with phenolic compounds, and also characterized by high scavenging activity. Also has good features Antonovka and Achabety. It should be noted that apple peel more helpful than the flesh, and therefore during consumption peeling of apples is unacceptable in terms of its usefulness.

  7. Chemical characterization, antioxidant and cytotoxic activities of the methanolic extract of Hymenocrater longiflorus grown in Iraq.

    PubMed

    Al-Anee, Rafal S A; Sulaiman, Ghassan M; Al-Sammarrae, Khulood W; Napolitano, Giuliana; Bagnati, Renzo; Lania, Luigi; Passoni, Alice; Majello, Barbara

    2015-09-01

    Hymenocrater longiflorus was collected from northern Iraq, and the chemical composition and antioxidant and cytotoxic activities of this plant were investigated. Ten compounds detected by HPLC-ESI/MS were identified as flavonoids and phenolic acids. The free radical scavenging activity of the 70% methanol extract was evaluated using the 2,2-diphenyl-1-picrylhydrazyl (DPPH) assay. The antioxidant activities of the extract may be attributed to its polyphenolic composition. The cytotoxicity of the plant extract against the osteosarcoma (U2OS) cell line was assessed with the 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT) assay. The extract significantly reduced the viability of cells in a concentration- and time-dependent manner. Cells were arrested during the S-phase of the cell cycle, and DNA damage was revealed by antibodies against histone H2AX. The apoptotic features of cell shrinkage and decrease in cell size were also observed. Western blot analysis revealed cleavage of poly (ADP-ribose)-polymerase 1 (PARP-1), in addition to increases in the proteins p53, p21, and γ-H2AX. Collectively, our findings demonstrate that the H. longiflorus extract is highly cytotoxic to U2OS cells, most likely due to its polyphenolic composition. PMID:26479342

  8. Composition determination of β-(Al x Ga1‑ x )2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Oshima, Yuichi; Ahmadi, Elaheh; Badescu, Stefan C.; Wu, Feng; Speck, James S.

    2016-06-01

    We demonstrate X-ray-diffraction-based composition estimation of β-(Al x Ga1‑ x )2O3 coherently grown on (010) β-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the β-(Al x Ga1‑ x )2O3 layer was formulated using the stress–strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using the out-of-plane lattice spacing determined by conventional X-ray ω–2θ measurements. This method was applied to molecular-beam-epitaxy-grown coherent β-(Al x Ga1‑ x )2O3/Ga2O3 heterostructures, and the Al composition in β-(Al x Ga1‑ x )2O3 agrees closely with the composition determined directly by atom probe tomography.

  9. Specific induction of fibronectin binding activity by hemoglobin in Candida albicans grown in defined media.

    PubMed

    Yan, S; Nègre, E; Cashel, J A; Guo, N; Lyman, C A; Walsh, T J; Roberts, D D

    1996-08-01

    Fibronectin (FN) is a major component of host extracellular matrix that may play an important role in the initiation and dissemination of Candida albicans infections. Expression of FN binding requires growth of C albicans blastoconidia in complex medium, and the regulation of FN receptor expression is poorly understood. We now demonstrate that hemoglobin is a potent and specific inducer of FN receptor expression and describe a defined medium supplemented with hemoglobin that greatly and stably enhances the binding activity of C. albicans for soluble FN. Enhancement of FN binding by hemoglobin in strain 44807 was concentration dependent and was maximal at 0.1% hemoglobin with 20- to 80-fold enhancement. The hemoglobin-induced FN binding to C. albicans was saturable, with a Kd of 2.7 X 10(-8) M. Enhancement required growth of C. albicans in hemoglobin-containing medium, since simply exposing blastoconidia to hemoglobin in a nongrowing status did not enhance binding. Induction was reversible following removal of hemoglobin from the growth medium and not associated with germination. Inorganic or protein-bound iron was not sufficient for the induction, since other iron-containing proteins or inorganic iron salts were inactive. Growth in the simple medium yeast nitrogen base supplemented with hemoglobin increased cell adhesion to immobilized FN and to cultured monolayers of bovine corneal endothelial cells. These data suggest that hemoglobin may be an important regulator of FN binding activity in C. albicans and thus may play a role in its pathogenesis. PMID:8757815

  10. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-07-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morpho-dynamics and for measuring and predicting bed load transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to re-work the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three-dimensions. Normalizing active layer thickness and dividing into 10 sub-layers we show that all grain sizes occur with almost equal frequency in all sub-layers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bed load prediction a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  11. Distribution of Oxygen Vacancies and Gadolinium Dopants in ZrO2-CeO2 Multi-Layer Films Grown on α-Al2O3

    SciTech Connect

    Wang, Chong M.; Engelhard, Mark H.; Azad, Samina; Saraf, Laxmikant V.; McCready, David E.; Shutthanandan, V.; Yu, Zhongqing; Thevuthasan, Suntharampillai; Watanabe, M.; Williams, D. B.

    2006-06-15

    Gd-doped ZrO2 and CeO2 multi-layer films were deposited on α-Al2O3 (0001) using oxygen plasma assisted molecular beam epitaxy. Oxygen vacancies and Gd dopant distributions were investigated in these multi-layer films using x-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (HRTEM), annular dark-filed imaging in scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping and x-ray photoelectron spectroscopy (XPS) depth profiling. EDS and XPS reveal that Gd concentration in the ZrO2 layer is lower than that in the CeO2 layer. As a result, higher oxygen vacancy concentration exists in CeO2 layers compared to that in ZrO2 layers. In addition, Gd is found to segregate only at the interfaces formed during the deposition of CeO2 layers on ZrO2 layers. On the other hand, the interfaces formed during the deposition of ZrO2 layers on CeO2 layers did not show any Gd segregation. The Gd segregation behavior at the every other interface is believed to be associated with the low solubility of Gd in ZrO2.

  12. High catalytic activity of oriented 2.0.0 copper(I) oxide grown on graphene film

    PubMed Central

    Primo, Ana; Esteve-Adell, Ivan; Blandez, Juan F.; Dhakshinamoorthy, Amarajothi; Álvaro, Mercedes; Candu, Natalia; Coman, Simona M.; Parvulescu, Vasile I.; García, Hermenegildo

    2015-01-01

    Metal oxide nanoparticles supported on graphene exhibit high catalytic activity for oxidation, reduction and coupling reactions. Here we show that pyrolysis at 900 °C under inert atmosphere of copper(II) nitrate embedded in chitosan films affords 1.1.1 facet-oriented copper nanoplatelets supported on few-layered graphene. Oriented (1.1.1) copper nanoplatelets on graphene undergo spontaneous oxidation to render oriented (2.0.0) copper(I) oxide nanoplatelets on few-layered graphene. These films containing oriented copper(I) oxide exhibit as catalyst turnover numbers that can be three orders of magnitude higher for the Ullmann-type coupling, dehydrogenative coupling of dimethylphenylsilane with n-butanol and C–N cross-coupling than those of analogous unoriented graphene-supported copper(I) oxide nanoplatelets. PMID:26509224

  13. High catalytic activity of oriented 2.0.0 copper(I) oxide grown on graphene film

    NASA Astrophysics Data System (ADS)

    Primo, Ana; Esteve-Adell, Ivan; Blandez, Juan F.; Dhakshinamoorthy, Amarajothi; Álvaro, Mercedes; Candu, Natalia; Coman, Simona M.; Parvulescu, Vasile I.; García, Hermenegildo

    2015-10-01

    Metal oxide nanoparticles supported on graphene exhibit high catalytic activity for oxidation, reduction and coupling reactions. Here we show that pyrolysis at 900 °C under inert atmosphere of copper(II) nitrate embedded in chitosan films affords 1.1.1 facet-oriented copper nanoplatelets supported on few-layered graphene. Oriented (1.1.1) copper nanoplatelets on graphene undergo spontaneous oxidation to render oriented (2.0.0) copper(I) oxide nanoplatelets on few-layered graphene. These films containing oriented copper(I) oxide exhibit as catalyst turnover numbers that can be three orders of magnitude higher for the Ullmann-type coupling, dehydrogenative coupling of dimethylphenylsilane with n-butanol and C-N cross-coupling than those of analogous unoriented graphene-supported copper(I) oxide nanoplatelets.

  14. High catalytic activity of oriented 2.0.0 copper(I) oxide grown on graphene film.

    PubMed

    Primo, Ana; Esteve-Adell, Ivan; Blandez, Juan F; Dhakshinamoorthy, Amarajothi; Álvaro, Mercedes; Candu, Natalia; Coman, Simona M; Parvulescu, Vasile I; García, Hermenegildo

    2015-01-01

    Metal oxide nanoparticles supported on graphene exhibit high catalytic activity for oxidation, reduction and coupling reactions. Here we show that pyrolysis at 900 °C under inert atmosphere of copper(II) nitrate embedded in chitosan films affords 1.1.1 facet-oriented copper nanoplatelets supported on few-layered graphene. Oriented (1.1.1) copper nanoplatelets on graphene undergo spontaneous oxidation to render oriented (2.0.0) copper(I) oxide nanoplatelets on few-layered graphene. These films containing oriented copper(I) oxide exhibit as catalyst turnover numbers that can be three orders of magnitude higher for the Ullmann-type coupling, dehydrogenative coupling of dimethylphenylsilane with n-butanol and C-N cross-coupling than those of analogous unoriented graphene-supported copper(I) oxide nanoplatelets. PMID:26509224

  15. Relationship between dislocation and the visible luminescence band observed in ZnO epitaxial layers grown on c-plane p-GaN templates by chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Saroj, Rajendra K.; Dhar, S.

    2016-08-01

    ZnO epitaxial layers are grown on c-plane GaN (p-type)/sapphire substrates using a chemical vapor deposition technique. Structural and luminescence properties of these layers have been studied systematically as a function of various growth parameters. It has been found that high quality ZnO epitaxial layers can indeed be grown on GaN films at certain optimum conditions. It has also been observed that the growth temperature and growth time have distinctly different influences on the screw and edge dislocation densities. While the growth temperature affects the density of edge dislocations more strongly than that of screw dislocations, an increase of growth duration leads to a rapid drop in the density of screw dislocation, whereas the density of edge dislocation hardly changes. Densities of both edge and screw dislocations are found to be minimum at a growth temperature of 500 °C. Interestingly, the defect related visible luminescence intensity also shows a minimum at the same temperature. Our study indeed suggests that the luminescence feature is related to threading edge dislocation. A continuum percolation model, where the defects responsible for visible luminescence are considered to be formed under the influence of the strain field surrounding the threading edge dislocations, is proposed. The theory explains the observed variation of the visible luminescence intensity as a function of the concentration of the dislocations.

  16. Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained-layer superlattices grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xie, Q. H.; Fung, K. K.; York, P. K.; Fernandez, G. E.; Eades, J. A.; Coleman, J. J.

    1990-11-01

    The intensities of sidebands in convergent beam electron diffraction reflections from plan-view specimens of strain modulated InGaAs/GaAs superlattices are dependent on the natural lattice mismatch, the ratio of the thicknesses of the superlattice layers, the period (sum of layer thicknesses) of the superlattice, and the g vectors of the reflections. The intensities of kinematic higher-order Laue zone (HOLZ) reflections have been calculated from a simple model based on alternate contraction and expansion of lattice spacings of the superlattice layers. An accurate estimate of the In content of InGaAs can be deduced from the elastic strains in the superlattice layers so obtained.

  17. Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nakashima, Kiichi; Sugiura, Hideo

    1997-08-01

    The relaxation process in InAsP/InGaAsP strained-layer superlattices (SLSs) with interfacial misfit dislocations has been investigated systematically by transmission electron microscopy (TEM) and x-ray analyses. The TEM analysis reveals that dislocations locate a little inside the buffer layer near the interface between the buffer and first well layer in the SLS. The x-ray analysis of (400) azimuthal angle dependence indicates the buffer layer has a large macroscopic tilt. Using a curve fitting analysis of various (hkl) x-ray profiles and reciprocal lattice mapping measurements, residual strain was determined quantitatively, i.e., Δa∥ and Δa⊥, in the SLS and buffer layer. These results reveal that the dislocations mainly cause lattice distortion of the buffer layer rather than relaxation of the SLS layer. The most remarkable result is that the change of a∥ is not equal to that of a⊥ in the buffer layer. This phenomenon strongly suggests that microplastic domains are generated in the buffer layer.

  18. Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Farrell, S.; Kodama, R.; Blissett, C.; Wang, X.; Colegrove, E.; Metzger, W. K.; Gessert, T. A.; Sivananthan, S.

    2014-08-01

    We report the use of molecular beam epitaxy to achieve p-type doping of CdTe grown on Si(211) substrates, by use of an arsenic cracker and post-growth annealing. A high hole density in CdTe is crucial for high efficiency II-VI-based solar cells. We measured the density of As in single-crystal CdTe by secondary ion mass spectroscopy; this showed that high As incorporation is achieved at low growth temperatures. Progressively higher incorporation was observed during low-temperature growth, presumably because of degradation of crystal quality with incorporation of As at such defect sites as dislocations and defect complexes. After As activation annealing under Hg overpressure, hole concentrations were obtained from Hall measurements. The highest doping level was ˜2.3 × 1016 cm-3, and near-1016 cm-3 doping was readily reproduced. The activation efficiency was ˜50%, but further optimization of the growth and annealing conditions is likely to improve this value.

  19. Layered-MnO₂ Nanosheet Grown on Nitrogen-Doped Graphene Template as a Composite Cathode for Flexible Solid-State Asymmetric Supercapacitor.

    PubMed

    Liu, Yongchuan; Miao, Xiaofei; Fang, Jianhui; Zhang, Xiangxin; Chen, Sujing; Li, Wei; Feng, Wendou; Chen, Yuanqiang; Wang, Wei; Zhang, Yining

    2016-03-01

    Flexible solid-state supercapacitors provide a promising energy-storage alternative for the rapidly growing flexible and wearable electronic industry. Further improving device energy density and developing a cheap flexible current collector are two major challenges in pushing the technology forward. In this work, we synthesize a nitrogen-doped graphene/MnO2 nanosheet (NGMn) composite by a simple hydrothermal method. Nitrogen-doped graphene acts as a template to induce the growth of layered δ-MnO2 and improves the electronic conductivity of the composite. The NGMn composite exhibits a large specific capacitance of about 305 F g(-1) at a scan rate of 5 mV s(-1). We also create a cheap and highly conductive flexible current collector using Scotch tape. Flexible solid-state asymmetric supercapacitors are fabricated with NGMn cathode, activated carbon anode, and PVA-LiCl gel electrolyte. The device can achieve a high operation voltage of 1.8 V and exhibits a maximum energy density of 3.5 mWh cm(-3) at a power density of 0.019 W cm(-3). Moreover, it retains >90% of its initial capacitance after 1500 cycles. Because of its flexibility, high energy density, and good cycle life, NGMn-based flexible solid state asymmetric supercapacitors have great potential for application in next-generation portable and wearable electronics.

  20. Effects of spatial variation of skull and cerebrospinal fluid layers on optical mapping of brain activities

    NASA Astrophysics Data System (ADS)

    Wang, Shuping; Shibahara, Nanae; Kuramashi, Daishi; Okawa, Shinpei; Kakuta, Naoto; Okada, Eiji; Maki, Atsushi; Yamada, Yukio

    2010-07-01

    In order to investigate the effects of anatomical variation in human heads on the optical mapping of brain activity, we perform simulations of optical mapping by solving the photon diffusion equation for layered-models simulating human heads using the finite element method (FEM). Particularly, the effects of the spatial variations in the thicknesses of the skull and cerebrospinal fluid (CSF) layers on mapping images are investigated. Mapping images of single active regions in the gray matter layer are affected by the spatial variations in the skull and CSF layer thicknesses, although the effects are smaller than those of the positions of the active region relative to the data points. The increase in the skull thickness decreases the sensitivity of the images to active regions, while the increase in the CSF layer thickness increases the sensitivity in general. The images of multiple active regions are also influenced by their positions relative to the data points and by their depths from the skin surface.

  1. Antioxidant Activity and Total Phenolic and Flavonoid Content of Various Solvent Extracts from In Vivo and In Vitro Grown Trifolium pratense L. (Red Clover)

    PubMed Central

    Mat Taha, Rosna; Banisalam, Behrooz

    2015-01-01

    In the present study the extracts of in vivo and in vitro grown plants as well as callus tissue of red clover were tested for their antioxidant activities, using different extraction solvent and different antioxidant assays. The total flavonoid and phenolic contents as well as extraction yield of the extracts were also investigated to determine their correlation with the antioxidant activity of the extracts. Among all the tested extracts the highest amounts of total phenolic and total flavonoids content were found in methanol extract of in vivo grown plants. The antioxidant activity of tested samples followed the order in vivo plant extract > callus extract > in vitro extract. The highest reducing power, 2,2-azino-bis-(3-ethylbenzothiazoline-6-sulphonic acid) (ABTS) radical scavenging, and chelating power were found in methanol extracts of in vivo grown red clover, while the chloroform fraction of in vivo grown plants showed the highest 2,2-diphenyl-1-picrylhydrazyl (DPPH) radical scavenging, superoxide anion radical scavenging and hydrogen peroxide scavenging compared to the other tested extracts. A significant correlation was found between the antioxidant activity of extracts and their total phenolic and total flavonoid content. According to the findings, the extract of in vitro culture of red clover especially the callus tissue possesses a comparable antioxidant activity to the in vivo cultured plants' extract. PMID:26064936

  2. Layer-by-layer engineered nanocapsules of curcumin with improved cell activity.

    PubMed

    Kittitheeranun, Paveenuch; Sajomsang, Warayuth; Phanpee, Sarunya; Treetong, Alongkot; Wutikhun, Tuksadon; Suktham, Kunat; Puttipipatkhachorn, Satit; Ruktanonchai, Uracha Rungsardthong

    2015-08-15

    Nanocarriers based on electrostatic Layer-by-layer (LbL) assembly of CaCO3 nanoparticles (CaCO3 NPs) was investigated. These inorganic nanoparticles was used as templates to construct nanocapsules made from films based on two oppositely charged polyelectrolytes, poly(diallyldimethylammonium chloride), and poly (sodium 4-styrene-sulfonate sodium salt), followed by core dissolution. The naked CaCO3 NPs, CaCO3 NPs coated with the polyelectrolytes and hollow nanocapsules were found with hexagonal shape with average sizes of 350-400 nm. A reversal of the surface charge between positive to negative zeta potential values was found, confirming the adsorption of polyelectrolytes. The loading efficiency and release of curcumin were controlled by the hydrophobic interactions between the drug and the polyelectrolyte matrix of the hollow nanocapsules. The quantity of curcumin released from hollow nanocapsules was found to increase under acidic environments, which is a desirable for anti-cancer drug delivery. The hollow nanocapsules were found to localize in the cytoplasm and nucleus compartment of Hela cancer cells after 24 h of incubation. Hollow nanocapsules were non-toxic to human fibroblast cells. Furthermore, curcumin loaded hollow nanocapsules exhibited higher in vitro cell inhibition against Hela cells than that of free curcumin, suggesting that polyelectrolyte based-hollow nanocapsules can be utilized as new carriers for drug delivery. PMID:26143232

  3. Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Koyama, T.; Fouda, A. N.; Shibata, N.; Chichibu, S. F.

    2007-10-01

    The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A-and B-exciton emissions at 9K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (112¯0) Al2O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

  4. Giant pyroelectric coefficient determined from the frequency dependence of the pyroelectric signal generated by epitaxial Pb(Zr0.2Ti0.8)O3 layers grown on single crystal SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Botea, M.; Iuga, A.; Pintilie, L.

    2013-12-01

    Epitaxial Pb(Zr0.2Ti0.8)O3 layers of good structural quality were grown on single crystal SrTiO3 substrates. The pyroelectric coefficient was estimated from the signal generated by the ferroelectric film working as a pyroelectric detector in the voltage mode, without pre-poling procedure. The obtained value is as high as 1.9 × 10-3 C/m2 K. The large value is attributed to the presence of 90° ferroelectric domains and to the compressive misfit strain, leading to an enhanced ferroelectric polarization.

  5. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  6. Silver ions/ovalbumin films layer-by-layer self-assembled polyacrylonitrile nanofibrous mats and their antibacterial activity.

    PubMed

    Song, Rukun; Yan, Jinjiao; Xu, Shasha; Wang, Yuntao; Ye, Ting; Chang, Jing; Deng, Hongbing; Li, Bin

    2013-08-01

    The CN groups of polyacrylonitrile (PAN) can strongly adsorb silver ions. The possibility of using this attraction as a layer-by-layer (LBL) self-assembly driving force was investigated. Firstly, the surface of the PAN nanofibrous mats was modified by silver ions to make sure it was positively charged. Then oppositely charged ovalbumin (OVA) and silver ions in aqueous media were alternatively deposited onto the surface of the obtained composite mats by layer-by-layer self-assembly technique. The morphology of the LBL films coating mats was observed by field emission scanning electron microscope (FE-SEM). The deposition of silver ions and OVA was confirmed by X-ray photoelectron spectroscopy (XPS) and wide-angle X-ray diffraction (XRD). The thermal degradation properties were investigated by thermo-gravimetric analysis (TGA). Besides these, the cytotoxicity and antibacterial activity of the prepared mats were studied via flow cytometry (FCM) and inhibition zone test, respectively. The results showed that the composite mats after LBL self-assembly processing exhibited improved thermal stability, slightly decreased cytotoxicity, and excellent antibacterial activity against Escherichia coil and Staphylococcus aureus. PMID:23563300

  7. Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Akutsu, Keiichi; Kawakami, Hideki; Suzuno, Mitsushi; Yaguchi, Takashi; Jiptner, Karolin; Chen, Jun; Sekiguchi, Takashi; Ootsuka, Teruhisa; Suemasu, Takashi

    2011-06-01

    We have epitaxially grown undoped β-FeSi2 films on Si(111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. β-FeSi2 films grown without atomic hydrogen exhibited p-type conduction with a hole density of over 1019 cm-3 at room temperature (RT). In contrast, those prepared with atomic hydrogen showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 1016 cm-3 at RT). The minority-carrier diffusion length was estimated to be approximately 16 μm using an electron-beam-induced current technique; this value is twice as large as that for β-FeSi2 prepared without atomic hydrogen. This result could be well explained in terms of the minority-carrier lifetimes measured by a microwave photoconductance decay technique. The 1/e decay time using a 904 nm laser pulse was approximately 17 μs, which is much longer than that for β-FeSi2 prepared without atomic hydrogen (3 μs). The photoresponsivity reached 13 mA/W at 1.31 μm, which is the highest value ever reported for β-FeSi2 films.

  8. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Anand, Kritika; Barvat, Arun; Pal, Prabir; Singh, Dilip K.; Jewariya, Mukesh; Ragam, Srinivasa; Adhikari, Sonachand; Maurya, Kamlesh K.; Khanna, Suraj P.

    2016-04-01

    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power. A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.

  9. Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of {beta}-FeSi{sub 2} layers grown by molecular-beam epitaxy

    SciTech Connect

    Akutsu, Keiichi; Kawakami, Hideki; Suzuno, Mitsushi; Yaguchi, Takashi; Jiptner, Karolin; Chen, Jun; Sekiguchi, Takashi; Ootsuka, Teruhisa; Suemasu, Takashi

    2011-06-15

    We have epitaxially grown undoped {beta}-FeSi{sub 2} films on Si(111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. {beta}-FeSi{sub 2} films grown without atomic hydrogen exhibited p-type conduction with a hole density of over 10{sup 19} cm{sup -3} at room temperature (RT). In contrast, those prepared with atomic hydrogen showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10{sup 16} cm{sup -3} at RT). The minority-carrier diffusion length was estimated to be approximately 16 {mu}m using an electron-beam-induced current technique; this value is twice as large as that for {beta}-FeSi{sub 2} prepared without atomic hydrogen. This result could be well explained in terms of the minority-carrier lifetimes measured by a microwave photoconductance decay technique. The 1/e decay time using a 904 nm laser pulse was approximately 17 {mu}s, which is much longer than that for {beta}-FeSi{sub 2} prepared without atomic hydrogen (3 {mu}s). The photoresponsivity reached 13 mA/W at 1.31 {mu}m, which is the highest value ever reported for {beta}-FeSi{sub 2} films.

  10. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  11. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  12. Mitotic activity and delay in fixation of tumour tissue. The influence of delay in fixation on mitotic activity of a human osteogenic sarcoma grown in athymic nude mice.

    PubMed

    Graem, N; Helweg-Larsen, K

    1979-09-01

    The purpose of the present investigation was to study the effect of delay in fixation on the mitotic activity in tumour tissue. A human osteogenic sarcoma, especially suitable for counting of mitoses, grown in athymic nude mice, was fixed with varying delay and the mitotic, prophase, metaphase and ana-telophase indices were determined. An almost exponential decline of the mitotic index was observed with a reduction to 49.4% and 15.0% after respectively 60 and 180 minutes. The proportional incidence of prophases, metaphases and ana-telophases changed so that a relative accummulation of advanced phases occured during the 180 minutes of observation. It is concluded that delay in fixation of a magnitude, which is not uncommon in routine surgical pathology, may allow the majority of mitoses to terminate, resulting in unreliable assessments of mitotic activity.

  13. Endogenous cholinergic tone modulates spontaneous network level neuronal activity in primary cortical cultures grown on multi-electrode arrays

    PubMed Central

    2013-01-01

    Background Cortical cultures grown long-term on multi-electrode arrays (MEAs) are frequently and extensively used as models of cortical networks in studies of neuronal firing activity, neuropharmacology, toxicology and mechanisms underlying synaptic plasticity. However, in contrast to the predominantly asynchronous neuronal firing activity exhibited by intact cortex, electrophysiological activity of mature cortical cultures is dominated by spontaneous epileptiform-like global burst events which hinders their effective use in network-level studies, particularly for neurally-controlled animat (‘artificial animal’) applications. Thus, the identification of culture features that can be exploited to produce neuronal activity more representative of that seen in vivo could increase the utility and relevance of studies that employ these preparations. Acetylcholine has a recognised neuromodulatory role affecting excitability, rhythmicity, plasticity and information flow in vivo although its endogenous production by cortical cultures and subsequent functional influence upon neuronal excitability remains unknown. Results Consequently, using MEA electrophysiological recording supported by immunohistochemical and RT-qPCR methods, we demonstrate for the first time, the presence of intrinsic cholinergic neurons and significant, endogenous cholinergic tone in cortical cultures with a characterisation of the muscarinic and nicotinic components that underlie modulation of spontaneous neuronal activity. We found that tonic muscarinic ACh receptor (mAChR) activation affects global excitability and burst event regularity in a culture age-dependent manner whilst, in contrast, tonic nicotinic ACh receptor (nAChR) activation can modulate burst duration and the proportion of spikes occurring within bursts in a spatio-temporal fashion. Conclusions We suggest that the presence of significant endogenous cholinergic tone in cortical cultures and the comparability of its modulatory effects

  14. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

    SciTech Connect

    Yu, J. L.; Cheng, S. Y.; Lai, Y. F.; Zheng, Q.

    2015-01-07

    The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness of the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.

  15. Ultrathin amorphous α-Co(OH)2 nanosheets grown on Ag nanowire surfaces as a highly active and durable electrocatalyst for oxygen evolution reaction.

    PubMed

    Kim, Hyeonghun; Kim, Youngmin; Noh, Yuseong; Kim, Won Bae

    2016-09-21

    Ultrathin α-Co(OH)2 nanosheets, prepared via simple hydrolysis at room temperature, were directly grown on Ag nanowires. The catalyst exhibited improved activity for the oxygen evolution reaction, with a reduced onset overpotential (220 mV) and superior durability because of the enhanced electron conductivity and stability of Ag nanowires in alkaline media. PMID:27518694

  16. Ultrathin amorphous α-Co(OH)2 nanosheets grown on Ag nanowire surfaces as a highly active and durable electrocatalyst for oxygen evolution reaction.

    PubMed

    Kim, Hyeonghun; Kim, Youngmin; Noh, Yuseong; Kim, Won Bae

    2016-09-21

    Ultrathin α-Co(OH)2 nanosheets, prepared via simple hydrolysis at room temperature, were directly grown on Ag nanowires. The catalyst exhibited improved activity for the oxygen evolution reaction, with a reduced onset overpotential (220 mV) and superior durability because of the enhanced electron conductivity and stability of Ag nanowires in alkaline media.

  17. Identification, stress tolerance, and antioxidant activity of lactic acid bacteria isolated from tropically grown fruits and leaves.

    PubMed

    Fessard, Amandine; Bourdon, Emmanuel; Payet, Bertrand; Remize, Fabienne

    2016-07-01

    From 6 samples of tropically grown fruits and leaves, 10 lactic acid bacteria belonging Leuconostoc, Weissella, and Lactobacillus species were isolated and identified by 16S rRNA gene sequencing and (GTG)5 fingerprinting. Acidification kinetics determined from BHI broth cultures showed genus-related patterns. In particular, Weissella cibaria appeared to act as a potent acidifier. Tolerance of isolates to acid, oxidative, or salt stress was highly variable and strain dependent. Isolate S14 (Leuconostoc pseudomesenteroides) growth was not affected by the presence of 0.05% H2O2, while Lactobacillus spp. isolates (S17 and S29) were the most tolerant to pH 4.5. The growth of 4 isolates, S5 (Leuconostoc mesenteroides), S14 and S10 (Leuconostoc pseudomesenteroides), and S27 (W. cibaria), was not affected by 5% NaCl. Nutritional beneficial properties were examined through measurement of antioxidant activities of short-term fermented pineapple juice, such as LDL oxidation and polyphenol content, and through exopolysaccharide formation from sucrose. Two isolates, S14 and S27, increased the antioxidant capacity of pineapple juice. The robust capacity of W. cibaria and of Leuconostoc pseudomesenteroides for vegetable lactic fermentation aimed to ameliorate food nutritional and functional quality was highlighted. PMID:27197991

  18. Identification, stress tolerance, and antioxidant activity of lactic acid bacteria isolated from tropically grown fruits and leaves.

    PubMed

    Fessard, Amandine; Bourdon, Emmanuel; Payet, Bertrand; Remize, Fabienne

    2016-07-01

    From 6 samples of tropically grown fruits and leaves, 10 lactic acid bacteria belonging Leuconostoc, Weissella, and Lactobacillus species were isolated and identified by 16S rRNA gene sequencing and (GTG)5 fingerprinting. Acidification kinetics determined from BHI broth cultures showed genus-related patterns. In particular, Weissella cibaria appeared to act as a potent acidifier. Tolerance of isolates to acid, oxidative, or salt stress was highly variable and strain dependent. Isolate S14 (Leuconostoc pseudomesenteroides) growth was not affected by the presence of 0.05% H2O2, while Lactobacillus spp. isolates (S17 and S29) were the most tolerant to pH 4.5. The growth of 4 isolates, S5 (Leuconostoc mesenteroides), S14 and S10 (Leuconostoc pseudomesenteroides), and S27 (W. cibaria), was not affected by 5% NaCl. Nutritional beneficial properties were examined through measurement of antioxidant activities of short-term fermented pineapple juice, such as LDL oxidation and polyphenol content, and through exopolysaccharide formation from sucrose. Two isolates, S14 and S27, increased the antioxidant capacity of pineapple juice. The robust capacity of W. cibaria and of Leuconostoc pseudomesenteroides for vegetable lactic fermentation aimed to ameliorate food nutritional and functional quality was highlighted.

  19. Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method

    NASA Astrophysics Data System (ADS)

    You, S. H.; Hong, K. J.; Jeong, T. S.; Lim, K. Y.; Youn, C. J.

    2014-10-01

    The epitaxial growth of the photoconductive MnAl2S4 with a layered-type rhombohedral structure was first achieved by means of the hot-wall epitaxy method. From the Hall effect measurement, two dominant scattering mechanisms on the mobility were extracted. One was an acoustic phonon scattering caused by lattice vibrations at the high-temperature range of T>100 K and the other one was an impurity ion scattering at the low-temperature range of T<100 K. Also, from the relation between the reciprocal temperature and the carrier concentration, two activation energies were evaluated to be the deep level of 83.1 and a shallow level of 14.1 meV at high-temperature and middle-temperature ranges, respectively. From the photocurrent (PC) measurement, the A, B, and C peaks were observed at whole temperature range. The electronic origin of these three peaks were caused by the band-to-band transitions from the valence band states of Γ4(z), Γ5(x), and Γ5(y) to the conduction band state of Γ1(s), respectively. Thus, the parameters of the crystal-field and the spin-orbit splitting were directly extracted by means of PC spectroscopy, and those values were 3.5 and 39.9 meV, respectively. The band gap energies estimated from PC and absorption measurements were well expressed by Eg(T)=Eg(0)-2.80×10-4T2/(T+287), where Eg(0) were found to be 3.7920, 3.7955, and 3.8354 eV at the valence band states of Γ4(z), Γ5(x), and Γ5(y), respectively.

  20. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  1. Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-02-01

    Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.

  2. Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE

    NASA Astrophysics Data System (ADS)

    Zolotukhin, D.; Nechaev, D.; Kuznetsova, N.; Ratnikov, V.; Rouvimov, S.; Jmerik, V.; Ivanov, S.

    2016-08-01

    We report on successful growth by plasma-assisted molecular beam epitaxy on a Si(111) substrate crack-free GaN/AlN buffer layers with a thickness more than 1 μm. The layers fabricated at relatively low growth temperature of 780°C have at room temperature the residual compressive stress of -97 MPa. Intrinsic stress evolution during the GaN growth was monitored in situ with a multi-beam optical system. Strong dependence of a stress relaxation ratio in the growing layer vs growth temperature was observed. The best-quality crack-free layers with TDs density of ∼⃒109 cm-2 and roughly zero bowing were obtained in the sample with sharp 2D-GaN/2D-AlN interface.

  3. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    NASA Astrophysics Data System (ADS)

    Ayari, Taha; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah

    2016-04-01

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  4. High temperature microbial activity in upper soil layers.

    PubMed

    Santana, M M; Gonzalez, J M

    2015-11-01

    Biomineralization at high temperatures in upper soil layers has been largely ignored, although desertification and global warming have led to increasing areas of soils exposed to high temperatures. Recent publications evidenced thermophilic bacteria ubiquity in soils as viable cells, and their role in nutrient cycling and seedling development. High temperature events, frequently observed at medium and low latitudes, locate temporal niches for thermophiles to grow in soils. There, at temperatures inhibitory for common mesophiles, thermophilic bacteria could perform biogeochemical reactions important to the soil food web. Nutrient cycling analyses in soils at medium and low latitudes would benefit from considering the potential role of thermophiles.

  5. Transparent ALD-grown Ta2O5 protective layer for highly stable ZnO photoelectrode in solar water splitting.

    PubMed

    Li, Chengcheng; Wang, Tuo; Luo, Zhibin; Zhang, Dong; Gong, Jinlong

    2015-04-30

    This communication describes a highly stable ZnO/Ta2O5 photoanode with Ta2O5 deposited by atomic layer deposition. The ultrathin Ta2O5 protective layer prevents corrosion of ZnO and reduces surface carrier recombination, leading to a nearly two-fold increase of photo-conversion efficiency. The transparency of Ta2O5 to sunlight is identified as the main reason for the excellent stability of the photoelectrode for 5 hours.

  6. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-12-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morphodynamics, and for measuring and predicting bedload transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to rework the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs (digital elevation models) of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three dimensions. By normalizing active layer thickness and dividing into 10 sublayers, we show that all grain sizes occur with almost equal frequency in all sublayers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bedload prediction, a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  7. Structural Characterization and Antimicrobial Activity of a Biosurfactant Obtained From Bacillus pumilus DSVP18 Grown on Potato Peels

    PubMed Central

    Sharma, Deepak; Ansari, Mohammad Javed; Gupta, Sonam; Al Ghamdi, Ahmad; Pruthi, Parul; Pruthi, Vikas

    2015-01-01

    Background: Biosurfactants constitute a structurally diverse group of surface-active compounds derived from microorganisms. They are widely used industrially in various industrial applications such as pharmaceutical and environmental sectors. Major limiting factor in biosurfactant production is their production cost. Objectives: The aim of this study was to investigate biosurfactant production under laboratory conditions with potato peels as the sole source of carbon source. Materials and Methods: A biosurfactant-producing bacterial strain (Bacillus pumilus DSVP18, NCBI GenBank accession no. GQ865643) was isolated from motor oil contaminated soil samples. Biochemical characteristics of the purified biosurfactant were determined and its chemical structure was analyzed. Stability studies were performed and biological activity of the biosurfactant was also evaluated. Results: The strain, when grown on modified minimal salt media supplemented with 2% potato peels as the sole carbon source, showed the ability to reduce Surface Tension (ST) value of the medium from 72 to 28.7 mN/m. The isolated biosurfactant (3.2 ± 0.32 g/L) was stable over a wide range of temperatures (20 - 120 ºC), pH (2-12) and salt concentrations (2 - 12%). When characterized using high-performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy, it was found to be a lipopeptide in nature, which was further confirmed by Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (mass peak 1044.60) and nuclear magnetic resonance (NMR) studies. Data showed that the isolated biosurfactant at the concentration range of 30 - 35 µg/ml had strong antimicrobial activity when tested against standard strains of Bacillus cereus, Escherichia coli, Salmonella enteritidis, Staphylococcus aureus and Paenibacillus larvae. Conclusions: Potato peels were proved to be potentially useful substrates for biosurfactant production by B. pumilus DSVP18. The strain possessed a

  8. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Zhang, Ting-Jun; Li, Shu-Sun

    2003-01-01

    The objective of this project is to map the spatial variation of the active layer over the arctic permafrost in terms of two parameters: (i) timing and duration of thaw period and (ii) differential frost heave and thaw settlement of the active layer. To achieve this goal, remote sensing, numerical modeling, and related field measurements are required. Tasks for the University of Colorado team are to: (i) determine the timing of snow disappearance in spring through changes in surface albedo (ii) simulate the freezing and thawing processes of the active layer and (iii) simulate the impact of snow cover on permafrost presence.

  9. Orexin-dependent activation of layer VIb enhances cortical network activity and integration of non-specific thalamocortical inputs.

    PubMed

    Hay, Y Audrey; Andjelic, Sofija; Badr, Sammy; Lambolez, Bertrand

    2015-11-01

    Neocortical layer VI is critically involved in thalamocortical activity changes during the sleep/wake cycle. It receives dense projections from thalamic nuclei sensitive to the wake-promoting neuropeptides orexins, and its deepest part, layer VIb, is the only cortical lamina reactive to orexins. This convergence of wake-promoting inputs prompted us to investigate how layer VIb can modulate cortical arousal, using patch-clamp recordings and optogenetics in rat brain slices. We found that the majority of layer VIb neurons were excited by nicotinic agonists and orexin through the activation of nicotinic receptors containing α4-α5-β2 subunits and OX2 receptor, respectively. Specific effects of orexin on layer VIb neurons were potentiated by low nicotine concentrations and we used this paradigm to explore their intracortical projections. Co-application of nicotine and orexin increased the frequency of excitatory post-synaptic currents in the ipsilateral cortex, with maximal effect in infragranular layers and minimal effect in layer IV, as well as in the contralateral cortex. The ability of layer VIb to relay thalamocortical inputs was tested using photostimulation of channelrhodopsin-expressing fibers from the orexin-sensitive rhomboid nucleus in the parietal cortex. Photostimulation induced robust excitatory currents in layer VIa neurons that were not pre-synaptically modulated by orexin, but exhibited a delayed, orexin-dependent, component. Activation of layer VIb by orexin enhanced the reliability and spike-timing precision of layer VIa responses to rhomboid inputs. These results indicate that layer VIb acts as an orexin-gated excitatory feedforward loop that potentiates thalamocortical arousal.

  10. Work function variation of MoS{sub 2} atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

    SciTech Connect

    Kim, Jong Hun; Kim, Jae Hyeon; Park, Jeong Young E-mail: jeongypark@kaist.ac.kr; Lee, Jinhwan; Hwang, C. C.; Lee, Changgu E-mail: jeongypark@kaist.ac.kr

    2015-06-22

    The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS{sub 2} films prepared with chemical vapor deposition (CVD) on SiO{sub 2} substrates with the number of film layers. Wafer-scale CVD MoS{sub 2} films with 2, 4, and 12 layers were fabricated on SiO{sub 2}, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS{sub 2} films increases by ∼0.15 eV when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with in-situ annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the surface potential decreases by ∼0.2 eV upon the removal of the adsorbed layers, which confirms that adsorbed species have a role in the variation in the work function.

  11. Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO2 seed layer

    NASA Astrophysics Data System (ADS)

    Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Rusop, M.; Khusaimi, Z.

    2016-07-01

    Titanium dioxide (TiO2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO2 seed layer of 0.100 M. PL spectra of the TiO2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO2 seed layer.

  12. Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-06-01

    Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the admittance of MIS structures based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy are studied. A technique is proposed for the determining the concentration of dopant based on the measurement of the admittance of MIS structures in the frequency range of 50 kHz - 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer have a high- frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. The distribution profile of dopant in the nearsurface layer of the semiconductor is calculated. It is shown that in p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has the lowest value near the interface with the insulator.

  13. The Role of Organic Capping Layers of Platinum Nanoparticles in Catalytic Activity of CO Oxidation

    SciTech Connect

    Park, Jeong Y.; Aliaga, Cesar; Renzas, J. Russell; Lee, Hyunjoo; Somorjai, Gabor A.

    2008-12-17

    We report the catalytic activity of colloid platinum nanoparticles synthesized with different organic capping layers. On the molecular scale, the porous organic layers have open spaces that permit the reactant and product molecules to reach the metal surface. We carried out CO oxidation on several platinum nanoparticle systems capped with various organic molecules to investigate the role of the capping agent on catalytic activity. Platinum colloid nanoparticles with four types of capping layer have been used: TTAB (Tetradecyltrimethylammonium Bromide), HDA (hexadecylamine), HDT (hexadecylthiol), and PVP (poly(vinylpyrrolidone)). The reactivity of the Pt nanoparticles varied by 30%, with higher activity on TTAB coated nanoparticles and lower activity on HDT, while the activation energy remained between 27-28 kcal/mol. In separate experiments, the organic capping layers were partially removed using ultraviolet light-ozone generation techniques, which resulted in increased catalytic activity due to the removal of some of the organic layers. These results indicate that the nature of chemical bonding between organic capping layers and nanoparticle surfaces plays a role in determining the catalytic activity of platinum colloid nanoparticles for carbon monoxide oxidation.

  14. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Li, Shu-Sun; Romanovsky, V.; Lovick, Joe; Wang, Z.; Peterson, Rorik

    2003-01-01

    A method of mapping the active layer of Arctic permafrost using a combination of conventional synthetic aperture radar (SAR) backscatter and more sophisticated interferometric SAR (INSAR) techniques is proposed. The proposed research is based on the sensitivity of radar backscatter to the freeze and thaw status of the surface soil, and the sensitivity of INSAR techniques to centimeter- to sub-centimeter-level surface differential deformation. The former capability of SAR is investigated for deriving the timing and duration of the thaw period for surface soil of the active layer over permafrost. The latter is investigated for the feasibility of quantitative measurement of frost heaving and thaw settlement of the active layer during the freezing and thawing processes. The resulting knowledge contributes to remote sensing mapping of the active layer dynamics and Arctic land surface hydrology.

  15. Growth condition dependence of Mg-doped GaN film grown by horizontal atmospheric MOCVD system with three layered laminar flow gas injection

    NASA Astrophysics Data System (ADS)

    Tokunaga, H.; Waki, I.; Yamaguchi, A.; Akutsu, N.; Matsumoto, K.

    1998-06-01

    We developed a novel atmospheric pressure horizontal MOCVD system (SR2000) for the growth of III-nitride film. This system was designed for high-speed gas flow in order to suppress thermal convection and undesirable reactant gas reaction. We have grown Mg-doped GaN films using SR2000. We studied the bis-cyclopentadienyl magnesium (Cp 2Mg) flow rate dependence and growth temperature ( Tg) dependence of Mg-doped GaN. As a result, we have obtained p-type GaN film with hole carrier density of 8×10 17 cm -3 with a mobility of 7.5 cm 2/(V s) at the growth condition with Cp 2Mg flow rate of 0.1 μmol/min at Tg of 1025°C.

  16. Dynamics of the Thermal State of Active Layer at the Alaska North Slope and Northern Yakutia

    NASA Astrophysics Data System (ADS)

    Kholodov, A. L.; Romanovsky, V. E.; Marchenko, S.; Shiklomanov, N. I.; Fedorov-Davydov, D.

    2010-12-01

    Dynamics of the active layer is one of the most important indexes, reflecting permafrost response to the modern climate changes. Monitoring of active layer thickness dynamics is the main goal of CALM (Circumpolar Active Layer Monitoring) project. But, from different points of view, it is very important to know not only maximal depth of seasonal thawing but also dynamics of thermal field of active layer and duration of its staying in the unfrozen state. Current research was aimed on the analyzing data of temperature measurements have been done during the more then 10 years at the North Slope of Brooks Range (Alaska) and 2 years at the selected sites at the Northern Yakutia (Russia) and its comparison with the 17 to 10 years records of active layer thickness dynamics at the corresponding sites (http://www.udel.edu/Geography/calm/data/north.html). The area of investigation characterized by the typical tundra landscape and different kinds of micro topography. Reported observation sites located at the latitudinal range from 68.5 to 70.3N in Alaska and 70.5 to 71.75N in the Northern Yakutia. Observation have been done using the 1 meter long MRC probe with 11 sensors (every 10 cm) and single Campbell SCI A107 sensors in Alaska and 2-channel HOBO U23 data loggers with TMC-HD thermistors in the Northern Yakutia. Analyses of CALM data show what most observation sites in Alaska (except located near the Brooks Range and at the Arctic Ocean coast) do not subjected to the significant sustainable changes of active layer thickness over the last 10 years. At the same time active layer thickness at the Yakutian sites was increasing. Temperature observations show decreasing of the mean annual temperature at the average depth of active layer bottom at the Alaskan sites. But, because of general trend to increasing of period of thawing it does not lead to the decreasing of active layer thickness. Recent equipment deployment at the Tiksi and Allaikha sites (Northern Yakutia) does not

  17. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

    NASA Astrophysics Data System (ADS)

    X, Z. Liu; C, Yue; C, T. Xia; W, L. Zhang

    2016-01-01

    High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga2O3 thin films and the n-type conductive β-Ga2O3 single-crystal substrate. Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

  18. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method

    NASA Astrophysics Data System (ADS)

    Thi Kieu Lien, Mai; Horita, Susumu

    2016-03-01

    Amorphous Si thin films on yttria-stabilized zirconia (YSZ) layers were crystallized widely in solid phase by the two-step method with a pulsed laser, moving the sample stage. The crystalline quality, impurity diffusion, and electrical properties of the crystallized Si films were investigated. It was found that the crystallinity of the Si thin films was improved and their surface was smooth without an incubation layer at the interface, indicating the uniform crystallinity of Si on YSZ. The diffusion of Zr and Y into the Si thin films was as small as or smaller than the order of 1017 atoms/cm3. We evaluated the electrical properties of carrier concentration and Hall mobility of the Si thin films with/without YSZ layers by using the resistivity and AC Hall effect measurements. The temperature and doping concentration dependences were measured for both undoped and P-doped films. It was found that both the undoped and P-doped Si/YSZ/glass films showed higher mobilities and carrier concentrations (and therefore higher conductivities), which indicate a smaller number of defects, than the Si/glass films. This suggested that the Si film crystallized on the YSZ layer is more suitable for application to electronic devices than the Si film on glass.

  19. Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen

    SciTech Connect

    Mizerov, A. M. Jmerik, V. N.; Kaibyshev, V. K.; Komissarova, T. A.; Masalov, S. A.; Ivanov, S. V.

    2009-08-15

    The results of comparative studies of the growth kinetics of the GaN layers of different polarity during ammonia molecular beam epitaxy and plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen with the use of sapphire substrates and GaN(0001-bar)/c-Al{sub 2}O{sub 3} templates grown by gas-phase epitaxy from metalorganic compounds are presented. The possibility is shown of obtaining the GaN layers with an atomically smooth surface during molecular beam epitaxy with plasma activation of nitrogen. For this purpose, it is suggested to carry out the growth in conditions enriched with metal near the mode of formation of the Ga drops at a temperature close to the decomposition temperature of GaN (TS {approx} 760 deg. C). The conclusion is made that an increase in the growth temperature positively affects the structural, optical, and electrical properties of the GaN (0001-bar) layers. A high quality of the GaN (0001) films grown by the PA MBE method at a low temperature of {approx}700 deg. C on the GaN/c-Al{sub 2}O{sub 3} templates is shown.

  20. GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

    PubMed

    So, Byeongchan; Lee, Kyungbae; Lee, Kyungjae; Heo, Cheon; Pyeon, Jaedo; Ko, Kwangse; Jang, Jongjin; Nam, Okhyun

    2016-05-01

    This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. PMID:27483845

  1. A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

    PubMed

    Xiao, Wang; Hui, Duan Ya; Zheng, Chen; Yu, Duan; Qiang, Yang Yong; Ping, Chen; Xiang, Chen Li; Yi, Zhao

    2015-01-01

    Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

  2. Improving ice nucleation activity of zein film through layer-by-layer deposition of extracellular ice nucleators.

    PubMed

    Shi, Ke; Yu, Hailong; Lee, Tung-Ching; Huang, Qingrong

    2013-11-13

    Zein protein has been of scientific interest in the development of biodegradable functional food packaging. This study aimed at developing a novel zein-based biopolymer film with ice nucleation activity through layer-by-layer deposition of biogenic ice nucleators, that is, extracellular ice nucleators (ECINs) isolated from Erwinia herbicola , onto zein film surface. The adsorption behaviors and mechanisms were investigated using quartz crystal microbalance with dissipation monitoring (QCM-D). On unmodified zein surface, the highest ECINs adsorption occurred at pH 5.0; on UV/ozone treated zein surface followed by deposition of poly(diallyldimethylammonium chloride) (PDADMAC) layer, the optimum condition for ECINs adsorption occurred at pH 7.0 and I 0.05 M, where the amount of ECINs adsorbed was also higher than that on unmodified zein surface. QCM-D analyses further revealed a two-step adsorption process on unmodified zein surfaces, compared to a one-step adsorption process on PDADMAC-modified zein surface. Also, significantly, in order to quantify the ice nucleation activity of ECINs-coated zein films, an empirical method was developed to correlate the number of ice nucleators with the ice nucleation temperature measured by differential scanning calorimetry. Calculated using this empirical method, the highest ice nucleation activity of ECINs on ECINs-modified zein film reached 64.1 units/mm(2), which was able to elevate the ice nucleation temperature of distilled water from -15.5 °C to -7.3 °C.

  3. Depth heterogeneity of fully aromatic polyamide active layers in reverse osmosis and nanofiltration membranes.

    PubMed

    Coronell, Orlando; Mariñas, Benito J; Cahill, David G

    2011-05-15

    We studied the depth heterogeneity of fully aromatic polyamide (PA) active layers in commercial reverse osmosis (RO) and nanofiltration (NF) membranes by quantifying near-surface (i.e., top 6 nm) and volume-averaged properties of the active layers using X-ray photoelectron spectrometry (XPS) and Rutherford backscattering spectrometry (RBS), respectively. Some membranes (e.g., ESPA3 RO) had active layers that were depth homogeneous with respect to the concentration and pK(a) distribution of carboxylic groups, degree of polymer cross-linking, concentration of barium ion probe that associated with ionized carboxylic groups, and steric effects experienced by barium ion. Other membranes (e.g., NF90 NF) had active layers that were depth heterogeneous with respect to the same properties. Our results therefore support the existence of both depth-homogeneous and depth-heterogeneous active layers. It remains to be assessed whether the depth heterogeneity consists of gradually changing properties throughout the active layer depth or of distinct sublayers with different properties.

  4. Activity of lactoperoxidase when adsorbed on protein layers.

    PubMed

    Haberska, Karolina; Svensson, Olof; Shleev, Sergey; Lindh, Liselott; Arnebrant, Thomas; Ruzgas, Tautgirdas

    2008-09-15

    Lactoperoxidase (LPO) is an enzyme, which is used as an antimicrobial agent in a number of applications, e.g., food technology. In the majority of applications LPO is added to a homogeneous product phase or immobilised on product surface. In the latter case, however, the measurements of LPO activity are seldom reported. In this paper we have assessed LPO enzymatic activity on bare and protein modified gold surfaces by means of electrochemistry. It was found that LPO rapidly adsorbs to bare gold surfaces resulting in an amount of LPO adsorbed of 2.9mg/m(2). A lower amount of adsorbed LPO is obtained if the gold surface is exposed to bovine serum albumin, bovine or human mucin prior to LPO adsorption. The enzymatic activity of the adsorbed enzyme is in general preserved at the experimental conditions and varies only moderately when comparing bare gold and gold surface pretreated with the selected proteins. The measurement of LPO specific activity, however, indicate that it is about 1.5 times higher if LPO is adsorbed on gold surfaces containing a small amount of preadsorbed mucin in comparison to the LPO directly adsorbed on bare gold.

  5. Crystallinity Modulation of Layered Carbon Nitride for Enhanced Photocatalytic Activities.

    PubMed

    Wang, Jianhai; Shen, Yanfei; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-08-22

    As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. Herein, a simple method to synthesize CN of high crystallinity by protonation of specific intermediate species during conventional polymerization is reported. Interestingly, the as-obtained CN exhibited improved photocatalytic activities of up to seven times those of the conventional bulk CN. This approach, with only a slight change to the conventional method, provides a facile way to effectively regulate the crystallinity of bulk CN to improve its photocatalytic activities and sheds light on large-scale industrial applications of CN with high efficiency for sustainable energy. PMID:27436164

  6. Crystallinity Modulation of Layered Carbon Nitride for Enhanced Photocatalytic Activities.

    PubMed

    Wang, Jianhai; Shen, Yanfei; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-08-22

    As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. Herein, a simple method to synthesize CN of high crystallinity by protonation of specific intermediate species during conventional polymerization is reported. Interestingly, the as-obtained CN exhibited improved photocatalytic activities of up to seven times those of the conventional bulk CN. This approach, with only a slight change to the conventional method, provides a facile way to effectively regulate the crystallinity of bulk CN to improve its photocatalytic activities and sheds light on large-scale industrial applications of CN with high efficiency for sustainable energy.

  7. Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence

    SciTech Connect

    Holy, V.; Matej, Z.; Pacherova, O.; Novak, V.; Cukr, M.; Olejnik, K.; Jungwirth, T.

    2006-12-15

    A combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single-crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration to Mn atoms at random noncrystallographic positions. In the epilayer, Mn incorporated at the interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coefficient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.

  8. Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers.

    PubMed

    Tupala, Jere; Kemell, Marianna; Härkönen, Emma; Ritala, Mikko; Leskelä, Markku

    2012-03-30

    Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.

  9. N/P InP homojunction solar cells with an In0.53Ga0.47As contacting layer grown by liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Shen, C. C.; Choi, K. Y.

    1989-01-01

    N/P InP homojunction solar cells with an In sub 0.53 Ga sub 0.47 As contacting layer were fabricated by liquid phase epitaxy (LPE). Electron-Beam-Induced-Current (EBIC) measurements were performed on several selected samples. It was found that the background doping level in the base region sometimes results in a deep junction, which greatly affects the cell performance.

  10. Contribution of S-Layer Proteins to the Mosquitocidal Activity of Lysinibacillus sphaericus

    PubMed Central

    Allievi, Mariana Claudia; Palomino, María Mercedes; Prado Acosta, Mariano; Lanati, Leonardo; Ruzal, Sandra Mónica; Sánchez-Rivas, Carmen

    2014-01-01

    Lysinibacillus sphaericus strains belonging the antigenic group H5a5b produce spores with larvicidal activity against larvae of Culex mosquitoes. C7, a new isolated strain, which presents similar biochemical characteristics and Bin toxins in their spores as the reference strain 2362, was, however, more active against larvae of Culex mosquitoes. The contribution of the surface layer protein (S-layer) to this behaviour was envisaged since this envelope protein has been implicated in the pathogenicity of several bacilli, and we had previously reported its association to spores. Microscopic observation by immunofluorescence detection with anti S-layer antibody in the spores confirms their attachment. S-layers and BinA and BinB toxins formed high molecular weight multimers in spores as shown by SDS-PAGE and western blot detection. Purified S-layer from both L. sphaericus C7 and 2362 strain cultures was by itself toxic against Culex sp larvae, however, that from C7 strain was also toxic against Aedes aegypti. Synergistic effect between purified S-layer and spore-crystal preparations was observed against Culex sp. and Aedes aegypti larvae. This effect was more evident with the C7 strain. In silico analyses of the S-layer sequence suggest the presence of chitin-binding and hemolytic domains. Both biochemical characteristics were detected for both S-layers strains that must justify their contribution to pathogenicity. PMID:25354162

  11. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.

    PubMed

    Lee, Kwang Jae; Kim, Sang-Jo; Kim, Jae-Joon; Hwang, Kyungwook; Kim, Sung-Tae; Park, Seong-Ju

    2014-06-30

    We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD) simulation shows that the light extraction efficiency (LEE) is increased by light scattering effect by nanopores. The output power of LED with NP GaN is increased up to 123.1% at 20 mA, compared to that of LED without NP GaN. The outstanding performance of LEDs with NP GaN is attributed to the increased internal quantum efficiency (IQE) by the carrier localization in the indium-rich clusters, low defect density in MQWs, and increased LEE owing to the light scattering in NP GaN.

  12. Densitometric validation and analysis of biomarker β-amyrin in different Acacia species (leaves) grown in Kingdom of Saudi Arabia by high performance thin-layer chromatography.

    PubMed

    Alam, Perwez; Alajmi, Mohamed Fahad; Siddiqui, Nasir Ali; Al-Rehaily, Adnan Jathlan; Alharbi, Hattan; Basudan, Omer Ahmed; Hussain, Afzal

    2015-07-01

    Biomarker β-amyrin was analyzed in the leaves of four different Acacia species (A. salicina, A. loreta, A. hamulosa and A. tortilis) grown in Kingdom of Saudi Arabia by a validated HPTLC method. The chromatography was performed on glass-backed silica gel 60 F254 HPTLC plates using solvents toluene: methanol (9:1, v/v) as mobile phase. The developed TLC plate was derivatized with anisaldehyde and scanned at 520 nm. A sharp peak of β-amyrin was found at Rf=0.58±0.01. The r2 and the linear regression equation for β-amyrin was found to be 0.991 and 19.913X+107.803, respectively in the concentration range of 100-800 ng. The percentage of β-amyrin was found to be maximum 2.70% w/w in A. tortilis, 1.85% w/w in A. loreta and 1.80% w/w in A. hamulosa while it was totally absent in A. salicina. This study conceives maiden reporting of quantification of β-amyrin in four different species of Acacia by validated HPTLC method. The developed method for the analysis of β-amyrin was proved to be reproducible by statistical analysis hence it can be employed for further analysis of β-amyrin in plasma, other biological fluids and in finished products available in the market.

  13. Densitometric validation and analysis of biomarker β-amyrin in different Acacia species (leaves) grown in Kingdom of Saudi Arabia by high performance thin-layer chromatography.

    PubMed

    Alam, Perwez; Alajmi, Mohamed Fahad; Siddiqui, Nasir Ali; Al-Rehaily, Adnan Jathlan; Alharbi, Hattan; Basudan, Omer Ahmed; Hussain, Afzal

    2015-07-01

    Biomarker β-amyrin was analyzed in the leaves of four different Acacia species (A. salicina, A. loreta, A. hamulosa and A. tortilis) grown in Kingdom of Saudi Arabia by a validated HPTLC method. The chromatography was performed on glass-backed silica gel 60 F254 HPTLC plates using solvents toluene: methanol (9:1, v/v) as mobile phase. The developed TLC plate was derivatized with anisaldehyde and scanned at 520 nm. A sharp peak of β-amyrin was found at Rf=0.58±0.01. The r2 and the linear regression equation for β-amyrin was found to be 0.991 and 19.913X+107.803, respectively in the concentration range of 100-800 ng. The percentage of β-amyrin was found to be maximum 2.70% w/w in A. tortilis, 1.85% w/w in A. loreta and 1.80% w/w in A. hamulosa while it was totally absent in A. salicina. This study conceives maiden reporting of quantification of β-amyrin in four different species of Acacia by validated HPTLC method. The developed method for the analysis of β-amyrin was proved to be reproducible by statistical analysis hence it can be employed for further analysis of β-amyrin in plasma, other biological fluids and in finished products available in the market. PMID:26431661

  14. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

    NASA Astrophysics Data System (ADS)

    Shahedipour-Sandvik, F.; Grandusky, J. R.; Jamil, M.; Jindal, V.; Schujman, S. B.; Schowalter, L. J.; Liu, R.; Ponce, F. A.; Cheung, M.; Cartwright, A.

    2005-09-01

    Relatively intense deep-green/yellow photoluminescence emission at ~600 nm is observed for InGaN/GaN multi quantum well (MQW) structures grown on bulk AlN substrates, demonstrating the potential to extend commercial III-Nitride LED technology to longer wavelengths. Optical spectroscopy has been performed on InGaN MQWs with an estimated In concentration of greater than 50% grown by metalorganic chemical vapor phase epitaxy at 750oC. Temperature- and power-dependence, time-resolved photoluminescence as well as spatially resolved cathodoluminescence measurements and transmission electron microscopy have been applied to understand and elucidate the nature of the mechanism responsible for radiative recombination at 600nm as well as higher energy emission band observed in the samples. A comparison between samples grown on bulk AlN and sapphire substrates indicate a lower degree of compositional and/or thickness fluctuation in the latter case. Our results indicate the presence of alloy compositional fluctuation in the active region despite the lower strain expected in the structure contrary to that of low In composition active regions deposited on bulk GaN substrates. Transient photoluminescence measurements signify a stretched exponential followed by a power decay to best fit the luminescence decay indicative of carrier hopping in the active region. Our results point to the fact that at such high In composition (>30%) InGaN compositional fluctuation is still a dominant effect despite lower strain at the substrate-epi interface.

  15. Nanofibrous mats layer-by-layer assembled by HTCC/layered silicate composites with in vitro antitumor activity against SMMC-7721 cells.

    PubMed

    Huang, Rong; Zhou, Xue; Liu, Xinqin; Zhang, Qi; Jin, Huan'guang; Shi, Xiaowen; Luo, Wenjing; Deng, Hongbing

    2014-03-01

    Organic rectorite (OREC) was used to prepare the intercalated nanocomposites with N-(2-hydroxyl) propyl-3-trimethyl ammonium chitosan chloride (HTCC), and then the immobilization of the positively charged HTCC-OREC nanocomposites and the negatively charged sodium alginate (ALG) on cellulose nanofibrous mats was performed through layer-by-layer (LBL) technique. Fiber diameter distribution results from Field Emission Scanning Electron Microscopy (FE-SEM) images showed that the average fiber diameter of (HTCC-OREC/ALG)(n) films coating obviously increased from 433 to 608 nm. Moreover, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results further confirmed the interaction between HTCC and OREC and their successful immobilization on cellulose template. MTT assay indicated that the prepared nanofibrous mats exhibited strong inhibitory activity against human hepatocellular carcinoma cells (SMMC-7721) but a little cytotoxic effect on human Chang liver (CCL-13) cells. Furthermore, the experimental results from FE-SEM and Inverted Fluorescence Microscope of SMMC-7721 cells cultured on LBL structured nanofibrous mats demonstrated the significant antitumor activity of prepared samples. The developed approach to immobilize nanocomposites onto polymer nanofibers with controllable thickness may also be utilized to tumor therapy. PMID:24730244

  16. CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoemission Spectroscopy

    SciTech Connect

    Haight, Richard; Barkhouse, Aaron; Wang, Wei; Yu, Luo; Shao, Xiaoyan; Mitzi, David; Hiroi, Homare; Sugimoto, Hiroki

    2013-12-02

    The heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4(CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

  17. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n--Ga2O3 drift layers grown by halide vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Higashiwaki, Masataka; Konishi, Keita; Sasaki, Kohei; Goto, Ken; Nomura, Kazushiro; Thieu, Quang Tu; Togashi, Rie; Murakami, Hisashi; Kumagai, Yoshinao; Monemar, Bo; Koukitu, Akinori; Kuramata, Akito; Yamakoshi, Shigenobu

    2016-03-01

    We investigated the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n--Ga2O3 drift layers grown on single-crystal n+-Ga2O3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from 21 °C to 200 °C, the Pt/Ga2O3 (001) Schottky contact exhibited a zero-bias barrier height of 1.09-1.15 eV with a constant near-unity ideality factor. The current-voltage characteristics of the SBDs were well-modeled by thermionic emission in the forward regime and thermionic field emission in the reverse regime over the entire temperature range.

  18. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    SciTech Connect

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Goble, Nicholas J.; Gao, Xuan P. A.; Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A.; Lu, Sirong; Jordan-Sweet, Jean; Smith, David J.

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  19. Permafrost and Active Layer Monitoring in the Maritime Antarctic: A Contribution to TSP and ANTPAS projects

    NASA Astrophysics Data System (ADS)

    Vieira, G.; Ramos, M.; Batista, V.; Caselli, A.; Correia, A.; Fragoso, M.; Gruber, S.; Hauck, C.; Kenderova, R.; Lopez-Martinez, J.; Melo, R.; Mendes-Victor, L. A.; Miranda, P.; Mora, C.; Neves, M.; Pimpirev, C.; Rocha, M.; Santos, F.; Blanco, J. J.; Serrano, E.; Trigo, I.; Tome, D.; Trindade, A.

    2008-12-01

    Permafrost and active layer monitoring in the Maritime Antarctic (PERMANTAR) is a Portuguese funded International Project that, in cooperation with the Spanish project PERMAMODEL, will assure the installation and the maintenance of a network of boreholes and active layer monitoring sites, in order to characterize the spatial distribution of the physical and thermal properties of permafrost, as well as the periglacial processes in Livingston and Deception Islands (South Shetlands). The project is part of the International Permafrost Association IPY projects Thermal State of Permafrost (TSP) and Antarctic and Sub-Antarctic Permafrost, Soils and Periglacial Environments (ANTPAS). It contributes to GTN-P and CALM-S networks. The PERMANTAR-PERMAMODEL permafrost and active layer monitoring network includes several boreholes: Reina Sofia hill (since 2000, 1.1m), Incinerador (2000, 2.3m), Ohridski 1 (2008, 5m), Ohridski 2 (2008, 6m), Gulbenkian-Permamodel 1 (2008, 25m) and Gulbenkian- Permamodel 2 (2008, 15m). For active layer monitoring, several CALM-S sites have been installed: Crater Lake (2006), Collado Ramos (2007), Reina Sofia (2007) and Ohridski (2007). The monitoring activities are accompanied by detailed geomorphological mapping in order to identify and map the geomorphic processes related to permafrost or active layer dynamics. Sites will be installed in early 2009 for monitoring rates of geomorphological activity in relation to climate change (e.g. solifluction, rockglaciers, thermokarst). In order to analyse the spatial distribution of permafrost and its ice content, electrical resistivity tomography (ERT), and seismic refraction surveys have been performed and, in early 2009, continuous ERT surveying instrumentation will be installed for monitoring active layer evolution. The paper presents a synthesis of the activities, as well as the results obtained up to the present, mainly relating to ground temperature monitoring and from permafrost characteristics and

  20. Layer-by-layer carbon nanotube bio-templates for in situ monitoring of the metabolic activity of nitrifying bacteria

    NASA Astrophysics Data System (ADS)

    Loh, Kenneth J.; Guest, Jeremy S.; Ho, Genevieve; Lynch, Jerome P.; Love, Nancy G.

    2009-03-01

    Despite the wide variety of effective disinfection and wastewater treatment techniques for removing organic and inorganic wastes, pollutants such as nitrogen remain in wastewater effluents. If left untreated, these nitrogenous wastes can adversely impact the environment by promoting the overgrowth of aquatic plants, depleting dissolved oxygen, and causing eutrophication. Although nitrification/denitrification processes are employed during advanced wastewater treatment, effective and efficient operation of these facilities require information of the pH, dissolved oxygen content, among many other parameters, of the wastewater effluent. In this preliminary study, a biocompatible CNT-based nanocomposite is proposed and validated for monitoring the biological metabolic activity of nitrifying bacteria in wastewater effluent environments (i.e., to monitor the nitrification process). Using carbon nanotubes and a pH-sensitive conductive polymer (i.e., poly(aniline) emeraldine base), a layer-by-layer fabrication technique is employed to fabricate a novel thin film pH sensor that changes its electrical properties in response to variations in ambient pH environments. Laboratory studies are conducted to evaluate the proposed nanocomposite's biocompatibility with wastewater effluent environments and its pH sensing performance.

  1. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    PubMed

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering. PMID:27494632

  2. Transfection activity of layer-by-layer plasmid DNA/poly(ethylenimine) films deposited on PLGA microparticles

    PubMed Central

    Kakade, Sandeep; Manickam, Devika Soundara; Handa, Hitesh; Mao, Guangzhao; Oupický, David

    2009-01-01

    Layer-by-layer (LbL) assemblies of DNA and polycations on the surface of colloidal templates can be used for gene delivery. Plasmid DNA encoding for secreted alkaline phosphatase (SEAP) was used to deposit LbL films with poly(ethylenimine) (PEI) on the surface of polystyrene and poly(lactide-co-glycolide) microparticles. The formation of LBL films was confirmed by zeta potential analysis and fluorescence and atomic force microscopy techniques. The LbL particles were rapidly internalized in a dose-dependent manner by J774.1 murine macrophages. Transfection activity of the LbL particles was evaluated in J774.1 cells using three different doses (5, 10, 25 particle per cell). The levels of SEAP expression increased with increasing dose but were lower than transfection levels mediated by control PEI/DNA polyplexes at corresponding DNA doses. The LbL particles reported here present a promising platform for delivery of DNA to phagocytic cells. PMID:18786622

  3. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    PubMed

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering.

  4. Carbon nanotubes supported cerium dioxide and platinum nanohybrids: Layer-by-layer synthesis and enhanced electrocatalytic activity for methanol oxidation

    NASA Astrophysics Data System (ADS)

    Lou, Xinyuan; Chen, Jiayi; Wang, Mengdi; Gu, Jialei; Wu, Ping; Sun, Dongmei; Tang, Yawen

    2015-08-01

    We successfully synthesize carbon nanotubes (CNTs) supported cerium dioxide and platinum (Pt/CeO2/CNTs) nanohybrids via layer-by-layer assembly. The composition, morphology and structure of the as-prepared Pt/CeO2/CNTs nanohybrids are characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectrometer (EDX), selected-area electron diffraction (SAED), X-ray diffraction (XRD), thermogravimetric analysis (TGA), and inductively coupled plasma atomic emission spectrometry (ICP-AES). By comparison of the electrocatalytic properties of the Pt/CeO2/CNTs with the Pt/CNTs, we systematically investigate the promotion effect of CeO2 on the Pt/CeO2/CNTs catalysts towards methanol oxidation. It is found that the introduction of CeO2 not only enhances the electrocatalytic activity and stability of the Pt/CeO2/CNTs catalyst for methanol oxidation but also minimizes the CO poisoning, probably accounting for the good oxygen carrying capacity of CeO2 and its high stability in acidic solution.

  5. Electron beam induced coloration and luminescence in layered structure of WO{sub 3} thin films grown by pulsed dc magnetron sputtering

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-06-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO{sub 3} film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device.

  6. Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

    SciTech Connect

    Jiao, S.; Zielinski, M.; Chassagne, T.; Roy, S.; Michaud, J. F.; Alquier, D.; Portail, M.

    2010-11-01

    In this work we investigated the influence of the Si substrate misorientation and 3C-SiC film thickness on the density of Anti-Phase Boundaries, in order to better understand the mechanism of antiphase domain annihilation. The two highlights in our work are the utilization of [001] orientated Si on-axis wafer with spherical dimples, which gave us access to a continuum of off-cut angles (0 deg. to {approx}11 deg.) and directions, and the deposition of elongated silicon islands on the surface of 3C-SiC epilayers, which improved the detection of APDs by analysis of Scanning Electron Microscopy images. We found that for a given layer thickness the relative surface occupation of one domain increases with the off-cut angle value, leading to single domain film up to a certain angle. This critical value is reduced as the film is thickened.

  7. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  8. Structural, optical, and electrical properties of Cu2O nanocubes grown on indium-tin-oxide-coated glass substrates by using seed-layer-free electrochemical deposition method

    NASA Astrophysics Data System (ADS)

    No, Young Soo; Oh, Do Hyon; Kim, Su Yeon; Yoo, Keon-Ho; Kim, Tae Whan

    2012-07-01

    Electrochemical deposition was employed to fabricate Cu2O nanocubes on indium-tin-oxide (ITO)-coated glass substrates at 75 °C without using any template, catalyst, or seed layer. Scanning electron microscopy images showed that the Cu2O nanocubes with a nanoscale size were uniformly formed on ITO-coated glass substrates. X-ray patterns of the Cu2O nanocubes exhibited the dominant peaks corresponding to the Cu2O cubic structures. The current-voltage curves of an Au/n-type Al-doped ZnO/p-type Cu2O nanocube/ITO device clearly showed current rectifying behavior with a turn-on voltage of 3.6 V.

  9. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    SciTech Connect

    Rosikhin, Ahmad Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  10. Discrete-Layer Piezoelectric Plate and Shell Models for Active Tip-Clearance Control

    NASA Technical Reports Server (NTRS)

    Heyliger, P. R.; Ramirez, G.; Pei, K. C.

    1994-01-01

    The objectives of this work were to develop computational tools for the analysis of active-sensory composite structures with added or embedded piezoelectric layers. The targeted application for this class of smart composite laminates and the analytical development is the accomplishment of active tip-clearance control in turbomachinery components. Two distinct theories and analytical models were developed and explored under this contract: (1) a discrete-layer plate theory and corresponding computational models, and (2) a three dimensional general discrete-layer element generated in curvilinear coordinates for modeling laminated composite piezoelectric shells. Both models were developed from the complete electromechanical constitutive relations of piezoelectric materials, and incorporate both displacements and potentials as state variables. This report describes the development and results of these models. The discrete-layer theories imply that the displacement field and electrostatic potential through-the-thickness of the laminate are described over an individual layer rather than as a smeared function over the thickness of the entire plate or shell thickness. This is especially crucial for composites with embedded piezoelectric layers, as the actuating and sensing elements within these layers are poorly represented by effective or smeared properties. Linear Lagrange interpolation polynomials were used to describe the through-thickness laminate behavior. Both analytic and finite element approximations were used in the plane or surface of the structure. In this context, theoretical developments are presented for the discrete-layer plate theory, the discrete-layer shell theory, and the formulation of an exact solution for simply-supported piezoelectric plates. Finally, evaluations and results from a number of separate examples are presented for the static and dynamic analysis of the plate geometry. Comparisons between the different approaches are provided when

  11. Active/Passive Control of Sound Radiation from Panels using Constrained Layer Damping

    NASA Technical Reports Server (NTRS)

    Gibbs, Gary P.; Cabell, Randolph H.

    2003-01-01

    A hybrid passive/active noise control system utilizing constrained layer damping and model predictive feedback control is presented. This system is used to control the sound radiation of panels due to broadband disturbances. To facilitate the hybrid system design, a methodology for placement of constrained layer damping which targets selected modes based on their relative radiated sound power is developed. The placement methodology is utilized to determine two constrained layer damping configurations for experimental evaluation of a hybrid system. The first configuration targets the (4,1) panel mode which is not controllable by the piezoelectric control actuator, and the (2,3) and (5,2) panel modes. The second configuration targets the (1,1) and (3,1) modes. The experimental results demonstrate the improved reduction of radiated sound power using the hybrid passive/active control system as compared to the active control system alone.

  12. Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane

    SciTech Connect

    Ratnikov, V. V. Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

    2013-12-15

    The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

  13. Changes of alternative oxidase activity, capacity and protein content in leaves of Cucumis sativus wild-type and MSC16 mutant grown under different light intensities.

    PubMed

    Florez-Sarasa, Igor; Ostaszewska, Monika; Galle, Alexander; Flexas, Jaume; Rychter, Anna M; Ribas-Carbo, Miquel

    2009-12-01

    In vitro studies demonstrated that alternative oxidase (AOX) is biochemically regulated by a sulfhydryl-disulfide system, interaction with alpha-ketoacids, ubiquinone pool redox state and protein content among others. However, there is still scarce information about the in vivo regulation of the AOX. Cucumis sativus wild-type (WT) and MSC16 mutant plants were grown under two different light intensities and were used to analyze the relationship between the amount of leaf AOX protein and its in vivo capacity and activity at night and day periods. WT and MSC16 plants presented lower total respiration (V(t)), cytochrome oxidase pathway (COP) activity (v(cyt)) and alternative oxidase pathway (AOP) activity (v(alt)) when grown at low light (LL), although growth light intensity did not change the amount of cytochrome oxidase (COX) nor AOX protein. Changes of v(cyt) related to growing light conditions suggested a substrate availability and energy demand control. On the other hand, the total amount of AOX protein present in the tissue does not play a role in the regulation neither of the capacity nor of the activity of the AOP in vivo. Soluble carbohydrates were directly related to the activity of the AOP. However, although differences in soluble sugar contents mostly regulate the capacity of the AOP at different growth light intensities, additional regulatory mechanisms are necessary to fully explain the observed results.

  14. Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

    SciTech Connect

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-08-20

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  15. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  16. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN

    SciTech Connect

    Luo, W. B.; Zhu, J.; Chen, H.; Wang, X. P.; Zhang, Y.; Li, Y. R.

    2009-11-15

    Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.

  17. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    SciTech Connect

    Pollock, Evan B. Lad, Robert J.

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  18. Abundance of the Multiheme c-Type Cytochrome OmcB Increases in Outer Biofilm Layers of Electrode-Grown Geobacter sulfurreducens

    PubMed Central

    Stephen, Camille S.; LaBelle, Edward V.; Brantley, Susan L.; Bond, Daniel R.

    2014-01-01

    When Geobacter sulfurreducens utilizes an electrode as its electron acceptor, cells embed themselves in a conductive biofilm tens of microns thick. While environmental conditions such as pH or redox potential have been shown to change close to the electrode, less is known about the response of G. sulfurreducens to growth in this biofilm environment. To investigate whether respiratory protein abundance varies with distance from the electrode, antibodies against an outer membrane multiheme cytochrome (OmcB) and cytoplasmic acetate kinase (AckA) were used to determine protein localization in slices spanning ∼25 µm-thick G. sulfurreducens biofilms growing on polished electrodes poised at +0.24 V (vs. Standard Hydrogen Electrode). Slices were immunogold labeled post-fixing, imaged via transmission electron microscopy, and digitally reassembled to create continuous images allowing subcellular location and abundance per cell to be quantified across an entire biofilm. OmcB was predominantly localized on cell membranes, and 3.6-fold more OmcB was detected on cells 10–20 µm distant from the electrode surface compared to inner layers (0–10 µm). In contrast, acetate kinase remained constant throughout the biofilm, and was always associated with the cell interior. This method for detecting proteins in intact conductive biofilms supports a model where the utilization of redox proteins changes with depth. PMID:25090411

  19. Process optimization of deposition conditions of PbS thin films grown by a successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

    NASA Astrophysics Data System (ADS)

    Yücel, Ersin; Yücel, Yasin; Beleli, Buse

    2015-07-01

    In this study, lead sulfide (PbS) thin films were synthesized by a successive ionic layer adsorption and reaction (SILAR) method with different pH, dipping time and dipping cycles. Response surface methodology (RSM) and central composite design (CCD) were successfully used to optimize the PbS films deposition parameters and understand the significance and interaction of the factors affecting the film quality. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition parameters (pH, dipping time and dipping cycles) on the response (the optical band gap of the films). Data obtained from RSM were subjected to the analysis of variance (ANOVA) and analyzed using a second order polynomial equation. The optimal conditions for the PbS films deposition have been found to be: pH of 9.1, dipping time of 10 s and dipping cycles of 10 cycles. The predicted band gap of PbS film was 2.13 eV under the optimal conditions. Verification experiment (2.24 eV) confirmed the validity of the predicted model. The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV-visible spectrophotometer.

  20. Thermal conductivity of Er{sup +3}:Y{sub 2}O{sub 3} films grown by atomic layer deposition

    SciTech Connect

    Raeisi Fard, Hafez; Hess, Andrew; Pashayi, Kamyar; Borca-Tasciuc, Theodorian; Becker, Nicholas; Proslier, Thomas; Pellin, Michael

    2013-11-04

    Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er{sup +3}:Y{sub 2}O{sub 3}) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m{sup −1}K{sup −1} to 8 W m{sup −1}K{sup −1} upon post deposition annealing, partially due to the suppression of the number of the -OH/H{sub 2}O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er{sup +3}:Y{sub 2}O{sub 3}-metal heater was determined to be ∼2.5 × 10{sup −8} m{sup 2} K/W.

  1. MAPLE prepared heterostructures with arylene based polymer active layer for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Stanculescu, F.; Rasoga, O.; Catargiu, A. M.; Vacareanu, L.; Socol, M.; Breazu, C.; Preda, N.; Socol, G.; Stanculescu, A.

    2015-05-01

    This paper presents some studies about the preparation by matrix-assisted pulsed laser evaporation (MAPLE) technique of heterostructures with single layer of arylene based polymer, poly[N-(2-ethylhexyl)2.7-carbazolyl vinylene]/AMC16 and poly[N-(2-ethylhexyl)2.7-carbazolyl 1.4-phenylene ethynylene]/AMC22, and with layers of these polymers mixed with Buckminsterfullerene/C60 in the weight ratio of 1:2 (AMC16:C60) and 1:3 (AMC22:C60). The deposited layers have been characterized by spectroscopic (UV-Vis-NIR, PL, FTIR) and microscopic (SEM, AFM) methods. The effect of the polymer particularities on the optical and electrical properties of the structures based on polymer and polymer:C60 mixed layer has been analyzed. The study of the electrical properties has revealed typical solar cell behavior for the heterostructure prepared by MAPLE on glass/ITO/PEDOT-PSS with AMC16, AMC22 and AMC22:C60 layer, confirming that this method is adequate for the preparation of polymeric and mixed active layers for solar cells applications. The highest photovoltaic effect was shown by the solar cell structure realized with single layer of AMC16 polymer: glass/ITO/PEDOT-PSS/AMC16/Al.

  2. Efficacy of different final irrigant activation protocols on smear layer removal by EDTA and citric acid.

    PubMed

    Herrera, Daniel R; Santos, Zarina T; Tay, Lidia Y; Silva, Emmanuel J; Loguercio, Alessandro D; Gomes, Brenda P F A

    2013-04-01

    The aim of this study was to evaluate the influence of different activation protocols for chelating agents used after chemo-mechanical preparation (CMP), for smear layer (SL) removal. Forty-five single-rooted human premolars with straight canals and fully formed apex were selected. The specimens were randomly divided into three groups depending on the chelating agent used for smear layer removal: distilled water (DW, control group); 17% ethylenediaminetetraacetic acid (EDTA); and 10% citric acid (CA). Each group was further divided into three subgroups according to the activation protocol used: no-activation (NA), manual dynamic activation (MDA), or sonic activation (SA). After CMP, all specimens were sectioned and processed for observation of the apical thirds by using scanning electron microscopy (SEM). Two calibrated evaluators attributed scores to each specimen. The differences between activation protocols were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Friedman and Wilcoxon signed rank tests were used for comparison between each root canal third. When chelating agents were activated, either by MDA or SA, it was obtained the best cleaning results with no significant difference between EDTA and CA (P > 0.05). Sonic activation showed the best results when root canal thirds were analyzed, in comparison to MDA and NA groups (P < 0.05). The activation of chelating agents, independent of the protocol used, benefits smear layer removal from root canals.

  3. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  4. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  5. Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Majumder, Kanishka; Das, N. R.

    2012-10-01

    The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n+-i-p+ avalanche photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.

  6. Influence of CO2 change during 90-day experiment on growth characteristics and photosynthetic activity in vegetables grown in Lunar Palace 1

    NASA Astrophysics Data System (ADS)

    Shao, Lingzhi; Liu, Hong; Wang, Minjuan; Fu, Yuming; Dong, Chen; Liu, Guanghui

    To establish bioregenerative life support system (BLSS) on lunar or Mars bases in the future, it is necessary to firstly conduct manned simulation experiments on the ground. For this purpose, Lunar palace 1 as an integrative experimental facility for permanent astrobase life support artificial closed ecosystem was set up, and 90-day experiment was carried out in this system. Vegtables as one of the important plant units, provide various nutrient content for crews in the system, such as vitamin, antioxidants and so on. However, it is not clear yet that how the CO _{2} change during 90-day experiment to affect on growth characteristics and photosynthetic activity in vegtables grown in the system. In this study, red lettuce, red rape, romaine lettuce, and bibb lettuce grown in the system were chosen as the subject investigated. Growth, expressed as dry weight, length of shoot and root, leaf area, was mearsured, and photosynthesis,expressed as net photosynthetic rate, intercellular CO _{2} concentration, chlorophyll contents and fluorescence was analyzed to detemind influence of CO _{2} change during 90-day experiment on growth in vegtables grown in the system.

  7. On the reliability of nanoindentation hardness of Al{sub 2}O{sub 3} films grown on Si-wafer by atomic layer deposition

    SciTech Connect

    Liu, Xuwen Haimi, Eero; Hannula, Simo-Pekka; Ylivaara, Oili M. E.; Puurunen, Riikka L.

    2014-01-15

    The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al{sub 2}O{sub 3} films having thickness varying from 10 to 600 nm were deposited on a single-side polished silicon wafer at 300 °C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8 nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20 nm and the nanoindentation hardness is about 11 GPa independent of film thickness.

  8. Microbial diversity of active layer and permafrost in an acidic wetland from the Canadian High Arctic.

    PubMed

    Wilhelm, Roland C; Niederberger, Thomas D; Greer, Charles; Whyte, Lyle G

    2011-04-01

    The abundance and structure of archaeal and bacterial communities from the active layer and the associated permafrost of a moderately acidic (pH < 5.0) High Arctic wetland (Axel Heiberg Island, Nunavut, Canada) were investigated using culture- and molecular-based methods. Aerobic viable cell counts from the active layer were ∼100-fold greater than those from the permafrost (2.5 × 10(5) CFU·(g soil dry mass)(-1)); however, a greater diversity of isolates were cultured from permafrost, as determined by 16S rRNA gene sequencing. Isolates from both layers demonstrated growth characteristics of a psychrotolerant, halotolerant, and acidotolerant community. Archaea constituted 0.1% of the total 16S rRNA gene copy number and, in the 16S rRNA gene clone library, predominantly (71% and 95%) consisted of Crenarchaeota related to Group I. 1b. In contrast, bacterial communities were diverse (Shannon's diversity index, H = ∼4), with Acidobacteria constituting the largest division of active layer clones (30%) and Actinobacteria most abundant in permafrost (28%). Direct comparisons of 16S rRNA gene sequence data highlighted significant differences between the bacterial communities of each layer, with the greatest differences occurring within Actinobacteria. Comparisons of 16S rRNA gene sequences with those from other Arctic permafrost and cold-temperature wetlands revealed commonly occurring taxa within the phyla Chloroflexi, Acidobacteria, and Actinobacteria (families Intrasporangiaceae and Rubrobacteraceae). PMID:21491982

  9. Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Luong, G. V.; Wirths, S.; Stefanov, S.; Holländer, B.; Schubert, J.; Conde, J. C.; Stoica, T.; Breuer, U.; Chiussi, S.; Goryll, M.; Buca, D.; Mantl, S.

    2013-05-01

    Excimer Laser Annealing (ELA) with a wavelength of 248 nm is used to study doping of biaxialy compressively strained Si1-xGex/Si heterostructures. The challenge is to achieve a high activation of As in SiGe, while conserving the elastic strain and suppressing dopant diffusion. Doping of 20 nm Si0.64Ge0.36 layers by ion implantation of 1 × 1015 As+/cm2 and subsequent laser annealing using single 20 ns pulse with an energy density of 0.6 J/cm2 leads to an As activation of about 20% and a sheet resistance of 650 Ω/sq. At this laser energy density, the entire SiGe layer melts and the subsequent fast recrystallization on a nanosecond time scale allows high As incorporation into the lattice. Moreover, using these annealing parameters, the SiGe layer exhibits epitaxial regrowth with negligible strain relaxation. ELA at energy densities greater than 0.6 J/cm2 resembles Pulsed Lased Induced Epitaxy, leading to an intermixing of the SiGe layer with the Si substrate, thus to thicker single-crystalline strained SiGe layers with sheet resistance down to 62 Ω/sq. Effects of energy densities on composition, crystal quality, activation of As and co-doping with B are discussed and related to the spatial and temporal evolution of the temperature in the irradiated zone, as simulated by Finite Element Methods.

  10. Electrospun nanofiber layers with incorporated photoluminescence indicator for chromatography and detection of ultraviolet-active compounds.

    PubMed

    Kampalanonwat, Pimolpun; Supaphol, Pitt; Morlock, Gertrud E

    2013-07-19

    For the first time, electrospun nanofiber phases were fabricated with manganese-activated zinc silicate as photoluminescent indicator (UV254) to transfer and enlarge its application to the field of UV-active compounds. By integration of such an indicator, UV-active compounds got visible on the chromatogram. The separation of 7 preservatives and a beverage sample were studied on the novel luminescent polyacrylonitrile layers. The mat thickness and mean fiber diameters were calculated for additions of different UV254 indicator concentrations. The separation efficiency on the photoluminescent layers was characterized by comparison to HPTLC layers and calculation of the plate numbers and resolutions. Some benefits were the reduction in migration distance (3cm), migration time (12min), analyte (10-nL volumes) and mobile phase volumes (1mL). As ultrathin stationary phase, such layers are suited for their integration into the Office Chromatography concept. For the first time, electrospun nanofiber layers were hyphenated with mass spectrometry and the confirmation of compounds was successfully performed using the elution-head based TLC-MS Interface.

  11. Microbial Activity in Active and Upper Permafrost Layers in Axel Heiberg Island

    NASA Astrophysics Data System (ADS)

    Vishnivetskaya, T. A.; Allan, J.; Cheng, K.; Chourey, K.; Hettich, R. L.; Layton, A.; Liu, X.; Murphy, J.; Mykytczuk, N. C.; Phelps, T. J.; Pfiffner, S. M.; Saarunya, G.; Stackhouse, B. T.; Whyte, L.; Onstott, T. C.

    2011-12-01

    Data on microbial communities and their metabolic activity in Arctic wetlands and underlying permafrost sediments is lacking. Samples were collected from different depths of a cryosol (D1, D2) and upper permafrost (D3) at the Axel Heiberg Island in July 2009. Upper cryosol has lower H2O but higher C and N content when compared to deeper horizons including upper permafrost layer. Deep cryosol and upper permafrost contained SO42- (155 and 132 ppm) and NO3- (0.12 and 0.10 ppm), respectively. The phylogenetic analyses of the environmental 16S rRNA genes showed the putative SRB were more abundant in permafrost (8%) than in cryosols, D1 (0.2%) and D2 (1.1%). Putative denitrifying bacteria varied along depth with near 0.1% in D1 and a significant increase in D2 (2.7%) and D3 (2.2%). Methanogens were not detected; methanotrophs were present at low levels in D3 (1%). Two sets of microcosms were set up. Firstly, anaerobic microcosms, amended with 10 mM glucose, sulfate or nitrate, were cultivated at varying temperatures (15o, 6o, and 0o C) for 10 months. Metabolic activity was monitored by measuring CO2 and CH4 every 3 months. A total of 89.5% of the D3-originated microcosms showed higher activity in comparison to cryosols in first 3 months. CH4 was not detected in these microcosms, whereas CO2 production was higher at 15o C or with glucose. Metaproteomics analyses of microcosms with higher levels of CO2 production indicated the presence of stress responsive proteins (e.g. DnaK, GroEL) and proteins essential for energy production and survival under carbon starvation (e.g. F0F1 ATP synthase, acyl-CoA dehydrogenase). These proteins have been previously shown to be up-regulated at low temperatures by permafrost bacteria. Metaproteomics data based on the draft sequences indicated the presence of proteins from the genera Bradyrhizobium, Sphingomonas, Lysinibacillus and Methylophilaceae and these bacteria were also detected by pyrosequencing. Secondly, a duplicate set of anaerobic

  12. [Comparative characteristics of the isotopic D/H composition and antioxidant activity of freshly squeezed juices from fruits and vegetables grown in different geographical regions].

    PubMed

    Bykov, M I; Dzhimak, S S; Basov, A A; Arcybasheva, O M; Shashkov, D; Baryshev, M G

    2015-01-01

    Data presented in this paper reflect changes in antioxidant activity, the content of prooxidant factors and deuterium concentration in freshly squeezed juices from fruits and vegetables grown in different climatic regions (10 samples of juices from wholesale and retail trade network of 8 kinds of vegetables and fruits, 28 manufacturers from 14 countries). Determination of the concentration of deuterium was performed using a nuclear magnetic resonance spectrometer. Total antioxidant activity of fresh juices was determined amperometrically after dilution in 2.2 mM H3PO4 in a ratio of 1:100. Prooxidant performance was evaluated by a maximum and area of flash of chemiluminescence induced by the introduction of 0.3% hydrogen peroxide. It was found that the antioxidant activity of fresh juice from fruits and vegetables grown within the same climatic region can differ by several times. In this case, most of the fruits and vegetables of russian producers were not inferior, than antioxidant activity of the fresh juices from the same plant products grown abroad. It should be noted that the indicators of the antioxidant activity of fresh juice from Russian pears exceeded this indicator of all fresh juices from pears, imported from Argentina, South Africa and the United States of America by 21.1, 30.4 and 32.7%, respectively. In assessing the prooxidant properties of fresh juices should be noted the almost complete absence of factors with prooxidant nature only in 36% of the studied fresh juices, whose maximum performance and area of flash of chemiluminescence were less than 0.1%, including a pear and apple juices from the russian production. It should be noted that the area of chemiluminescence of the juice from potatoes, grown in Russia, was at 103.1 and 115.2% lower than in juice obtained respectively from potatoes produced in Israel and Egypt (p<0.05), indicating a higher safety of consumption of potatoes produced in Russia. When studying--the isotopic D/H composition of

  13. [Comparative characteristics of the isotopic D/H composition and antioxidant activity of freshly squeezed juices from fruits and vegetables grown in different geographical regions].

    PubMed

    Bykov, M I; Dzhimak, S S; Basov, A A; Arcybasheva, O M; Shashkov, D; Baryshev, M G

    2015-01-01

    Data presented in this paper reflect changes in antioxidant activity, the content of prooxidant factors and deuterium concentration in freshly squeezed juices from fruits and vegetables grown in different climatic regions (10 samples of juices from wholesale and retail trade network of 8 kinds of vegetables and fruits, 28 manufacturers from 14 countries). Determination of the concentration of deuterium was performed using a nuclear magnetic resonance spectrometer. Total antioxidant activity of fresh juices was determined amperometrically after dilution in 2.2 mM H3PO4 in a ratio of 1:100. Prooxidant performance was evaluated by a maximum and area of flash of chemiluminescence induced by the introduction of 0.3% hydrogen peroxide. It was found that the antioxidant activity of fresh juice from fruits and vegetables grown within the same climatic region can differ by several times. In this case, most of the fruits and vegetables of russian producers were not inferior, than antioxidant activity of the fresh juices from the same plant products grown abroad. It should be noted that the indicators of the antioxidant activity of fresh juice from Russian pears exceeded this indicator of all fresh juices from pears, imported from Argentina, South Africa and the United States of America by 21.1, 30.4 and 32.7%, respectively. In assessing the prooxidant properties of fresh juices should be noted the almost complete absence of factors with prooxidant nature only in 36% of the studied fresh juices, whose maximum performance and area of flash of chemiluminescence were less than 0.1%, including a pear and apple juices from the russian production. It should be noted that the area of chemiluminescence of the juice from potatoes, grown in Russia, was at 103.1 and 115.2% lower than in juice obtained respectively from potatoes produced in Israel and Egypt (p<0.05), indicating a higher safety of consumption of potatoes produced in Russia. When studying--the isotopic D/H composition of

  14. Photocatalytic activity of layered perovskite-like oxides in practically valuable chemical reactions

    NASA Astrophysics Data System (ADS)

    Rodionov, I. A.; Zvereva, I. A.

    2016-03-01

    The photocatalytic properties of layered perovskite-like oxides corresponding to the Ruddlesen–Popper, Dion–Jacobson and Aurivillius phases are considered. Of the photocatalytic reactions, the focus is on the reactions of water splitting, hydrogen evolution from aqueous solutions of organic substances and degradation of model organic pollutants. Possibilities to conduct these reactions under UV and visible light in the presence of layered perovskite-like oxides and composite photocatalysts based on them are shown. The specific surface area, band gap energy, particle morphology, cation and anion doping and surface modification are considered as factors that affect the photocatalytic activity. Special attention is paid to the possibilities to enhance the photocatalytic activity by intercalation, ion exchange and exfoliation, which are inherent in this class of compounds. Conclusions are made about the prospects for the use of layered perovskite-like oxides in photocatalysis. The bibliography includes 253 references.

  15. Photocatalytic activity of layered perovskite-like oxides in practically valuable chemical reactions

    NASA Astrophysics Data System (ADS)

    Rodionov, I. A.; Zvereva, I. A.

    2016-03-01

    The photocatalytic properties of layered perovskite-like oxides corresponding to the Ruddlesen-Popper, Dion-Jacobson and Aurivillius phases are considered. Of the photocatalytic reactions, the focus is on the reactions of water splitting, hydrogen evolution from aqueous solutions of organic substances and degradation of model organic pollutants. Possibilities to conduct these reactions under UV and visible light in the presence of layered perovskite-like oxides and composite photocatalysts based on them are shown. The specific surface area, band gap energy, particle morphology, cation and anion doping and surface modification are considered as factors that affect the photocatalytic activity. Special attention is paid to the possibilities to enhance the photocatalytic activity by intercalation, ion exchange and exfoliation, which are inherent in this class of compounds. Conclusions are made about the prospects for the use of layered perovskite-like oxides in photocatalysis. The bibliography includes 253 references.

  16. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    NASA Astrophysics Data System (ADS)

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-02-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics.

  17. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    PubMed Central

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-01-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics. PMID:26877263

  18. [Effects of human engineering activities on permafrost active layer and its environment in northern Qinghai-Tibetan plateau].

    PubMed

    Guo, Zhenggang; Wu, Qingbo; Niu, Fujun

    2006-11-01

    With disturbed and undisturbed belts during the construction of Qinghai-Tibet highway as test objectives, this paper studied the effects of human engineering activities on the permafrost ecosystem in northern Qinghai-Tibetan plateau. The results showed that the thickness of permafrost active layer was smaller in disturbed than in undisturbed belt, and decreased with increasing altitude in undisturbed belt while no definite pattern was observed in disturbed belt. Different vegetation types had different effects on the thickness of permafrost active layer, being decreased in the order of steppe > shrub > meadow. In the two belts, altitude was the main factor affecting the vertical distribution of soil moisture, but vegetation type was also an important affecting factor if the altitude was similar. Due to the human engineering activities, soil temperature in summer was lower in disturbed than in undisturbed belt.

  19. Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

    SciTech Connect

    Gao, Fangliang; Li, Guoqiang

    2014-01-27

    Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{sub 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.

  20. Changes of ribulose bisphosphate carboxylase/oxygenase content, ribulose bisphosphate concentration, and photosynthetic activity during adaptation of high-CO/sub 2/ grown cells to low-CO/sub 2/ conditions in Chlorella pyrenoidosa

    SciTech Connect

    Yokota, A.; Canvin, D.T.

    1986-02-01

    Changes of some photosynthetic properties of high-CO/sub 2/ grown cells of Chlorella pyrenoidosa during adaptation to low-CO/sub 2/ conditions have been investigated. The K/sub m/ value of photosynthesis of the high-CO/sub 2/ grown cells for dissolved inorganic carbon was 3.3 millimolar and decreased to 25 to 30 micromolar within 4 hours after transferring to air. In the presence of saturating CO/sub 2/ concentrations the photosynthetic activity of the high-CO/sub 2/ grown cells was 1.5 times as high as that of the low-CO/sub 2/ grown cells. There was a significant rise of the photosynthetic activity during adaptation of the high-CO/sub 2/ grown cells to air, followed by a steady decrease. The activity of ribulose 1,5-bisphosphate carboxylase/oxygenase in both the high and low-CO/sub 2/ grown cells was close to the photosynthetic activity of the cells. The concentration of ribulose 1,5-bisphosphate (RuBP) was higher in the low-CO/sub 2/ adapting and low-CO/sub 2/ grown celsl than in the high-CO/sub 2/ grown cells regardless of the photosynthetic rate. This seems to be due to an increased RuBP regeneration activity during adaptation followed by maintenance of the new higher concentration. The RuBP level always exceeded the concentration of ribulose 1,5-bisphosphate carboxylase/oxygenase RuBP binding sites in both the high- and low-CO/sub 2/ grown cells at any dissolved inorganic carbon concentration.