Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.

PubMed

Griffiths, J A; Chen, D; Turchetta, R; Royle, G J

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 10(3) to 1.6 at a gain of 3.93 × 10(1). The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 10(3), dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

NASA Astrophysics Data System (ADS)

Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, x-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

Comparison of a CCD and an APS for soft X-ray diffraction

NASA Astrophysics Data System (ADS)

Stewart, Graeme; Bates, R.; Blue, A.; Clark, A.; Dhesi, S. S.; Maneuski, D.; Marchal, J.; Steadman, P.; Tartoni, N.; Turchetta, R.

2011-12-01

We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

Photodiode area effect on performance of X-ray CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

2018-02-01

Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

Active pixel sensor array as a detector for electron microscopy.

PubMed

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

A Novel Multi-Aperture Based Sun Sensor Based on a Fast Multi-Point MEANSHIFT (FMMS) Algorithm

PubMed Central

You, Zheng; Sun, Jian; Xing, Fei; Zhang, Gao-Fei

2011-01-01

With the current increased widespread interest in the development and applications of micro/nanosatellites, it was found that we needed to design a small high accuracy satellite attitude determination system, because the star trackers widely used in large satellites are large and heavy, and therefore not suitable for installation on micro/nanosatellites. A Sun sensor + magnetometer is proven to be a better alternative, but the conventional sun sensor has low accuracy, and cannot meet the requirements of the attitude determination systems of micro/nanosatellites, so the development of a small high accuracy sun sensor with high reliability is very significant. This paper presents a multi-aperture based sun sensor, which is composed of a micro-electro-mechanical system (MEMS) mask with 36 apertures and an active pixels sensor (APS) CMOS placed below the mask at a certain distance. A novel fast multi-point MEANSHIFT (FMMS) algorithm is proposed to improve the accuracy and reliability, the two key performance features, of an APS sun sensor. When the sunlight illuminates the sensor, a sun spot array image is formed on the APS detector. Then the sun angles can be derived by analyzing the aperture image location on the detector via the FMMS algorithm. With this system, the centroid accuracy of the sun image can reach 0.01 pixels, without increasing the weight and power consumption, even when some missing apertures and bad pixels appear on the detector due to aging of the devices and operation in a harsh space environment, while the pointing accuracy of the single-aperture sun sensor using the conventional correlation algorithm is only 0.05 pixels. PMID:22163770

Spectral characterisation and noise performance of Vanilla—an active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Bates, R.; Bohndiek, S. E.; Clark, A.; Arvanitis, Costas D.; Greenshaw, T.; Laing, A.; Maneuski, D.; Turchetta, R.; O'Shea, V.

2008-06-01

This work will report on the characterisation of a new active pixel sensor, Vanilla. The Vanilla comprises of 512×512 (25μm 2) pixels. The sensor has a 12 bit digital output for full-frame mode, although it can also be readout in analogue mode, whereby it can also be read in a fully programmable region-of-interest (ROI) mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second (fps), while in ROI mode, the speed depends on the size, shape and number of ROIs. For example, an ROI of 6×6 pixels can be read at 20,000 fps in analogue mode. Using photon transfer curve (PTC) measurements allowed for the calculation of the read noise, shot noise, full-well capacity and camera gain constant of the sensor. Spectral response measurements detailed the quantum efficiency (QE) of the detector through the UV and visible region. Analysis of the ROI readout mode was also performed. Such measurements suggest that the Vanilla APS (active pixel sensor) will be suitable for a wide range of applications including particle physics and medical imaging.

Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu

Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novelmore » low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm{sup 2}/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10{sup −13} A) and OPD (<10{sup −8} A/cm{sup 2}) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. Conclusions: The proposed a-IGZO APS x-ray imager with a pixel pitch <75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.« less

Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis.

PubMed

Zhao, Chumin; Kanicki, Jerzy

2014-09-01

The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67-3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. The result demonstrates that a large charge gain of 31-122 is achieved for the proposed high-mobility (5-20 cm2/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10(-13) A) and OPD (<10(-8) A/cm2) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. The proposed a-IGZO APS x-ray imager with a pixel pitch<75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.

Towards real-time VMAT verification using a prototype, high-speed CMOS active pixel sensor.

PubMed

Zin, Hafiz M; Harris, Emma J; Osmond, John P F; Allinson, Nigel M; Evans, Philip M

2013-05-21

This work investigates the feasibility of using a prototype complementary metal oxide semiconductor active pixel sensor (CMOS APS) for real-time verification of volumetric modulated arc therapy (VMAT) treatment. The prototype CMOS APS used region of interest read out on the chip to allow fast imaging of up to 403.6 frames per second (f/s). The sensor was made larger (5.4 cm × 5.4 cm) using recent advances in photolithographic technique but retains fast imaging speed with the sensor's regional read out. There is a paradigm shift in radiotherapy treatment verification with the advent of advanced treatment techniques such as VMAT. This work has demonstrated that the APS can track multi leaf collimator (MLC) leaves moving at 18 mm s(-1) with an automatic edge tracking algorithm at accuracy better than 1.0 mm even at the fastest imaging speed. Evaluation of the measured fluence distribution for an example VMAT delivery sampled at 50.4 f/s was shown to agree well with the planned fluence distribution, with an average gamma pass rate of 96% at 3%/3 mm. The MLC leaves motion and linac pulse rate variation delivered throughout the VMAT treatment can also be measured. The results demonstrate the potential of CMOS APS technology as a real-time radiotherapy dosimeter for delivery of complex treatments such as VMAT.

The Multidimensional Integrated Intelligent Imaging project (MI-3)

NASA Astrophysics Data System (ADS)

Allinson, N.; Anaxagoras, T.; Aveyard, J.; Arvanitis, C.; Bates, R.; Blue, A.; Bohndiek, S.; Cabello, J.; Chen, L.; Chen, S.; Clark, A.; Clayton, C.; Cook, E.; Cossins, A.; Crooks, J.; El-Gomati, M.; Evans, P. M.; Faruqi, W.; French, M.; Gow, J.; Greenshaw, T.; Greig, T.; Guerrini, N.; Harris, E. J.; Henderson, R.; Holland, A.; Jeyasundra, G.; Karadaglic, D.; Konstantinidis, A.; Liang, H. X.; Maini, K. M. S.; McMullen, G.; Olivo, A.; O'Shea, V.; Osmond, J.; Ott, R. J.; Prydderch, M.; Qiang, L.; Riley, G.; Royle, G.; Segneri, G.; Speller, R.; Symonds-Tayler, J. R. N.; Triger, S.; Turchetta, R.; Venanzi, C.; Wells, K.; Zha, X.; Zin, H.

2009-06-01

MI-3 is a consortium of 11 universities and research laboratories whose mission is to develop complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) and to apply these sensors to a range of imaging challenges. A range of sensors has been developed: On-Pixel Intelligent CMOS (OPIC)—designed for in-pixel intelligence; FPN—designed to develop novel techniques for reducing fixed pattern noise; HDR—designed to develop novel techniques for increasing dynamic range; Vanilla/PEAPS—with digital and analogue modes and regions of interest, which has also been back-thinned; Large Area Sensor (LAS)—a novel, stitched LAS; and eLeNA—which develops a range of low noise pixels. Applications being developed include autoradiography, a gamma camera system, radiotherapy verification, tissue diffraction imaging, X-ray phase-contrast imaging, DNA sequencing and electron microscopy.

Active pixel sensors: the sensor of choice for future space applications?

NASA Astrophysics Data System (ADS)

Leijtens, Johan; Theuwissen, Albert; Rao, Padmakumar R.; Wang, Xinyang; Xie, Ning

2007-10-01

It is generally known that active pixel sensors (APS) have a number of advantages over CCD detectors if it comes to cost for mass production, power consumption and ease of integration. Nevertheless, most space applications still use CCD detectors because they tend to give better performance and have a successful heritage. To this respect a change may be at hand with the advent of deep sub-micron processed APS imagers (< 0.25-micron feature size). Measurements performed on test structures at the University of Delft have shown that the imagers are very radiation tolerant even if made in a standard process without the use of special design rules. Furthermore it was shown that the 1/f noise associated with deep sub-micron imagers is reduced as compared to previous generations APS imagers due to the improved quality of the gate oxides. Considering that end of life performance will have to be guaranteed, limited budget for adding shielding metal will be available for most applications and lower power operations is always seen as a positive characteristic in space applications, deep sub-micron APS imagers seem to have a number of advantages over CCD's that will probably cause them to replace CCD's in those applications where radiation tolerance and low power operation are important

50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

2015-12-07

Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  <1 mm(-1). In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

PubMed Central

Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

2016-01-01

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.; Fossum, Eric R.

1993-01-01

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Pixel electronic noise as a function of position in an active matrix flat panel imaging array

NASA Astrophysics Data System (ADS)

Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

2010-04-01

We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

Flight Qualified Micro Sun Sensor

NASA Technical Reports Server (NTRS)

Liebe, Carl Christian; Mobasser, Sohrab; Wrigley, Chris; Schroeder, Jeffrey; Bae, Youngsam; Naegle, James; Katanyoutanant, Sunant; Jerebets, Sergei; Schatzel, Donald; Lee, Choonsup

2007-01-01

A prototype small, lightweight micro Sun sensor (MSS) has been flight qualified as part of the attitude-determination system of a spacecraft or for Mars surface operations. The MSS has previously been reported at a very early stage of development in NASA Tech Briefs, Vol. 28, No. 1 (January 2004). An MSS is essentially a miniature multiple-pinhole electronic camera combined with digital processing electronics that functions analogously to a sundial. A micromachined mask containing a number of microscopic pinholes is mounted in front of an active-pixel sensor (APS). Electronic circuits for controlling the operation of the APS, readout from the pixel photodetectors, and analog-to-digital conversion are all integrated onto the same chip along with the APS. The digital processing includes computation of the centroids of the pinhole Sun images on the APS. The spacecraft computer has the task of converting the Sun centroids into Sun angles utilizing a calibration polynomial. The micromachined mask comprises a 500-micron-thick silicon wafer, onto which is deposited a 57-nm-thick chromium adhesion- promotion layer followed by a 200-nm-thick gold light-absorption layer. The pinholes, 50 microns in diameter, are formed in the gold layer by photolithography. The chromium layer is thin enough to be penetrable by an amount of Sunlight adequate to form measurable pinhole images. A spacer frame between the mask and the APS maintains a gap of .1 mm between the pinhole plane and the photodetector plane of the APS. To minimize data volume, mass, and power consumption, the digital processing of the APS readouts takes place in a single field-programmable gate array (FPGA). The particular FPGA is a radiation- tolerant unit that contains .32,000 gates. No external memory is used so the FPGA calculates the centroids in real time as pixels are read off the APS with minimal internal memory. To enable the MSS to fit into a small package, the APS, the FPGA, and other components are mounted on a single two-sided board following chip-on-board design practices

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

NASA Technical Reports Server (NTRS)

Marshall, Paul; Reed, Robert; Fodness, Bryan; Jordan, Tom; Pickel, Jim; Xapsos, Michael; Burke, Ed

2004-01-01

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

MiniDSS: a low-power and high-precision miniaturized digital sun sensor

NASA Astrophysics Data System (ADS)

de Boer, B. M.; Durkut, M.; Laan, E.; Hakkesteegt, H.; Theuwissen, A.; Xie, N.; Leijtens, J. L.; Urquijo, E.; Bruins, P.

2017-11-01

A high-precision and low-power miniaturized digital sun sensor has been developed at TNO. The single-chip sun sensor comprises an application specific integrated circuit (ASIC) on which an active pixel sensor (APS), read-out and processing circuitry as well as communication circuitry are combined. The design was optimized for low recurrent cost. The sensor is albedo insensitive and the prototype combines an accuracy in the order of 0.03° with a mass of just 72 g and a power consumption of only 65 mW.

A Combined Laser-Communication and Imager for Microspacecraft (ACLAIM)

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J.

1998-01-01

ACLAIM is a multi-function instrument consisting of a laser communication terminal and an imaging camera that share a common telescope. A single APS- (Active Pixel Sensor) based focal-plane-array is used to perform both the acquisition and tracking (for laser communication) and science imaging functions.

First results on DEPFET Active Pixel Sensors fabricated in a CMOS foundry—a promising approach for new detector development and scientific instrumentation

NASA Astrophysics Data System (ADS)

Aschauer, S.; Majewski, P.; Lutz, G.; Soltau, H.; Holl, P.; Hartmann, R.; Schlosser, D.; Paschen, U.; Weyers, S.; Dreiner, S.; Klusmann, M.; Hauser, J.; Kalok, D.; Bechteler, A.; Heinzinger, K.; Porro, M.; Titze, B.; Strüder, L.

2017-11-01

DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain single-photon detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression". Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 μm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

Chromatic Modulator for High Resolution CCD or APS Devices

NASA Technical Reports Server (NTRS)

Hartley, Frank T. (Inventor); Hull, Anthony B. (Inventor)

2003-01-01

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization.

PubMed

Zhao, Chumin; Kanicki, Jerzy; Konstantinidis, Anastasios C; Patel, Tushita

2015-11-01

Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50-300 e-) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). In this study, imaging performance of a large area (29×23 cm2) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterized and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165-400 μm at various MGDs. The impact of electronic noise on CNR was also evaluated. The LFW mode shows better DQE at low air kerma (Ka<10 μGy) and should be used for DBT. At current DBT applications, air kerma (Ka∼10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165-400 μm in size can be resolved using a MGD range of 0.3-1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at MGD of 2.5 mGy), an increased CNR (by ∼10) for microcalcifications was observed using the Dexela 2923 MAM CMOS APS x-ray imager at a lower MGD (2.0 mGy). The Dexela 2923 MAM CMOS APS x-ray imager is capable to achieve a high imaging performance at spatial frequencies up to 6.7 lp/mm. Microcalcifications of 165 μm are distinguishable based on reported data and their modeling results due to the small pixel pitch of 75 μm. At the same time, potential dose reduction is expected using the studied CMOS APS x-ray imager.

Image sensor system with bio-inspired efficient coding and adaptation.

PubMed

Okuno, Hirotsugu; Yagi, Tetsuya

2012-08-01

We designed and implemented an image sensor system equipped with three bio-inspired coding and adaptation strategies: logarithmic transform, local average subtraction, and feedback gain control. The system comprises a field-programmable gate array (FPGA), a resistive network, and active pixel sensors (APS), whose light intensity-voltage characteristics are controllable. The system employs multiple time-varying reset voltage signals for APS in order to realize multiple logarithmic intensity-voltage characteristics, which are controlled so that the entropy of the output image is maximized. The system also employs local average subtraction and gain control in order to obtain images with an appropriate contrast. The local average is calculated by the resistive network instantaneously. The designed system was successfully used to obtain appropriate images of objects that were subjected to large changes in illumination.

Advancements in DEPMOSFET device developments for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Bombelli, L.; Eckart, R.; Fiorini, C.; Fischer, P.; Hälker, O.; Herrmann, S.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Schaller, G.; Schopper, F.; Soltau, H.; Strüder, L.; Wölfel, S.

2006-06-01

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e - ENC limit.

Autonomous star tracker based on active pixel sensors (APS)

NASA Astrophysics Data System (ADS)

Schmidt, U.

2017-11-01

Star trackers are opto-electronic sensors used onboard of satellites for the autonomous inertial attitude determination. During the last years, star trackers became more and more important in the field of the attitude and orbit control system (AOCS) sensors. High performance star trackers are based up today on charge coupled device (CCD) optical camera heads. The Jena-Optronik GmbH is active in the field of opto-electronic sensors like star trackers since the early 80-ties. Today, with the product family ASTRO5, ASTRO10 and ASTRO15, all marked segments like earth observation, scientific applications and geo-telecom are supplied to European and Overseas customers. A new generation of star trackers can be designed based on the APS detector technical features. The measurement performance of the current CCD based star trackers can be maintained, the star tracker functionality, reliability and robustness can be increased while the unit costs are saved.

Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Fischer, P.; Hälker, O.; Herrmann, S.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Strüder, L.; Trimpl, M.; Wermes, N.; Wölfel, S.

2005-08-01

DEPMOSFET based Active Pixel Sensor (APS) matrix devices, originally developed to cope with the challenging requirements of the XEUS Wide Field Imager, have proven to be a promising new imager concept for a variety of future X-ray imaging and spectroscopy missions like Simbol-X. The devices combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. A production of sensor prototypes with 64 x 64 pixels with a size of 75 μm x 75 μm each has recently been finished at the MPI semiconductor laboratory in Munich. The devices are built for row-wise readout and require dedicated control and signal processing electronics of the CAMEX type, which is integrated together with the sensor onto a readout hybrid. A number of hybrids incorporating the most promising sensor design variants has been built, and their performance has been studied in detail. A spectroscopic resolution of 131 eV has been measured, the readout noise is as low as 3.5 e- ENC. Here, the dependence of readout noise and spectroscopic resolution on the device temperature is presented.

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

PubMed

Kim, Daehyeok; Song, Minkyu; Choe, Byeongseong; Kim, Soo Youn

2017-06-25

In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

Proton-counting radiography for proton therapy: a proof of principle using CMOS APS technology

PubMed Central

Poludniowski, G; Allinson, N M; Anaxagoras, T; Esposito, M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Price, T; Evans, P M

2014-01-01

Despite the early recognition of the potential of proton imaging to assist proton therapy the modality is still removed from clinical practice, with various approaches in development. For proton-counting radiography applications such as Computed Tomography (CT), the Water-Equivalent-Path-Length (WEPL) that each proton has travelled through an imaged object must be inferred. Typically, scintillator-based technology has been used in various energy/range telescope designs. Here we propose a very different alternative of using radiation-hard CMOS Active Pixel Sensor (APS) technology. The ability of such a sensor to resolve the passage of individual protons in a therapy beam has not been previously shown. Here, such capability is demonstrated using a 36 MeV cyclotron beam (University of Birmingham Cyclotron, Birmingham, UK) and a 200 MeV clinical radiotherapy beam (iThemba LABS, Cape Town, SA). The feasibility of tracking individual protons through multiple CMOS layers is also demonstrated using a two-layer stack of sensors. The chief advantages of this solution are the spatial discrimination of events intrinsic to pixelated sensors, combined with the potential provision of information on both the range and residual energy of a proton. The challenges in developing a practical system are discussed. PMID:24785680

Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu; Konstantinidis, Anastasios C.

Purpose: Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50–300 e{sup −}) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). Methods: In this study, imaging performance of a large area (29 × 23 cm{sup 2}) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterizedmore » and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165–400 μm at various MGDs. The impact of electronic noise on CNR was also evaluated. Results: The LFW mode shows better DQE at low air kerma (K{sub a} < 10 μGy) and should be used for DBT. At current DBT applications, air kerma (K{sub a} ∼ 10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165–400 μm in size can be resolved using a MGD range of 0.3–1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at MGD of 2.5 mGy), an increased CNR (by ∼10) for microcalcifications was observed using the Dexela 2923 MAM CMOS APS x-ray imager at a lower MGD (2.0 mGy). Conclusions: The Dexela 2923 MAM CMOS APS x-ray imager is capable to achieve a high imaging performance at spatial frequencies up to 6.7 lp/mm. Microcalcifications of 165 μm are distinguishable based on reported data and their modeling results due to the small pixel pitch of 75 μm. At the same time, potential dose reduction is expected using the studied CMOS APS x-ray imager.« less

DynAMITe: a prototype large area CMOS APS for breast cancer diagnosis using x-ray diffraction measurements

NASA Astrophysics Data System (ADS)

Konstantinidis, A.; Anaxagoras, T.; Esposito, M.; Allinson, N.; Speller, R.

2012-03-01

X-ray diffraction studies are used to identify specific materials. Several laboratory-based x-ray diffraction studies were made for breast cancer diagnosis. Ideally a large area, low noise, linear and wide dynamic range digital x-ray detector is required to perform x-ray diffraction measurements. Recently, digital detectors based on Complementary Metal-Oxide- Semiconductor (CMOS) Active Pixel Sensor (APS) technology have been used in x-ray diffraction studies. Two APS detectors, namely Vanilla and Large Area Sensor (LAS), were developed by the Multidimensional Integrated Intelligent Imaging (MI-3) consortium to cover a range of scientific applications including x-ray diffraction. The MI-3 Plus consortium developed a novel large area APS, named as Dynamically Adjustable Medical Imaging Technology (DynAMITe), to combine the key characteristics of Vanilla and LAS with a number of extra features. The active area (12.8 × 13.1 cm2) of DynaMITe offers the ability of angle dispersive x-ray diffraction (ADXRD). The current study demonstrates the feasibility of using DynaMITe for breast cancer diagnosis by identifying six breast-equivalent plastics. Further work will be done to optimize the system in order to perform ADXRD for identification of suspicious areas of breast tissue following a conventional mammogram taken with the same sensor.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

A Low-Power High-Speed Smart Sensor Design for Space Exploration Missions

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi

1997-01-01

A low-power high-speed smart sensor system based on a large format active pixel sensor (APS) integrated with a programmable neural processor for space exploration missions is presented. The concept of building an advanced smart sensing system is demonstrated by a system-level microchip design that is composed with an APS sensor, a programmable neural processor, and an embedded microprocessor in a SOI CMOS technology. This ultra-fast smart sensor system-on-a-chip design mimics what is inherent in biological vision systems. Moreover, it is programmable and capable of performing ultra-fast machine vision processing in all levels such as image acquisition, image fusion, image analysis, scene interpretation, and control functions. The system provides about one tera-operation-per-second computing power which is a two order-of-magnitude increase over that of state-of-the-art microcomputers. Its high performance is due to massively parallel computing structures, high data throughput rates, fast learning capabilities, and advanced VLSI system-on-a-chip implementation.

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

NASA Astrophysics Data System (ADS)

Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

2012-04-01

In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Yang, Guang; Ortiz, Monico; Wrigley, Christopher; Hancock, Bruce; Cunningham, Thomas

2000-01-01

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Proof of principle study of the use of a CMOS active pixel sensor for proton radiography.

PubMed

Seco, Joao; Depauw, Nicolas

2011-02-01

Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the CMOS detector for protons. The development and use of CMOS in proton radiography could allow in vivo proton range checks, patient setup QA, and real-time tumor tracking.

Vision Sensors and Cameras

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Silicon charge-coupled-device (CCD) imagers have been and are a specialty market ruled by a few companies for decades. Based on CMOS technologies, active-pixel sensors (APS) began to appear in 1990 at the 1 μm technology node. These pixels allow random access, global shutters, and they are compatible with focal-plane imaging systems combining sensing and first-level image processing. The progress towards smaller features and towards ultra-low leakage currents has provided reduced dark currents and μm-size pixels. All chips offer Mega-pixel resolution, and many have very high sensitivities equivalent to ASA 12.800. As a result, HDTV video cameras will become a commodity. Because charge-integration sensors suffer from a limited dynamic range, significant processing effort is spent on multiple exposure and piece-wise analog-digital conversion to reach ranges >10,000:1. The fundamental alternative is log-converting pixels with an eye-like response. This offers a range of almost a million to 1, constant contrast sensitivity and constant colors, important features in professional, technical and medical applications. 3D retino-morphic stacking of sensing and processing on top of each other is being revisited with sub-100 nm CMOS circuits and with TSV technology. With sensor outputs directly on top of neurons, neural focal-plane processing will regain momentum, and new levels of intelligent vision will be achieved. The industry push towards thinned wafers and TSV enables backside-illuminated and other pixels with a 100% fill-factor. 3D vision, which relies on stereo or on time-of-flight, high-speed circuitry, will also benefit from scaled-down CMOS technologies both because of their size as well as their higher speed.

Synchrotron based planar imaging and digital tomosynthesis of breast and biopsy phantoms using a CMOS active pixel sensor.

PubMed

Szafraniec, Magdalena B; Konstantinidis, Anastasios C; Tromba, Giuliana; Dreossi, Diego; Vecchio, Sara; Rigon, Luigi; Sodini, Nicola; Naday, Steve; Gunn, Spencer; McArthur, Alan; Olivo, Alessandro

2015-03-01

The SYRMEP (SYnchrotron Radiation for MEdical Physics) beamline at Elettra is performing the first mammography study on human patients using free-space propagation phase contrast imaging. The stricter spatial resolution requirements of this method currently force the use of conventional films or specialized computed radiography (CR) systems. This also prevents the implementation of three-dimensional (3D) approaches. This paper explores the use of an X-ray detector based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology as a possible alternative, for acquisitions both in planar and tomosynthesis geometry. Results indicate higher quality of the images acquired with the synchrotron set-up in both geometries. This improvement can be partly ascribed to the use of parallel, collimated and monochromatic synchrotron radiation (resulting in scatter rejection, no penumbra-induced blurring and optimized X-ray energy), and partly to phase contrast effects. Even though the pixel size of the used detector is still too large - and thus suboptimal - for free-space propagation phase contrast imaging, a degree of phase-induced edge enhancement can clearly be observed in the images. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Centroid measurement error of CMOS detector in the presence of detector noise for inter-satellite optical communications

NASA Astrophysics Data System (ADS)

Li, Xin; Zhou, Shihong; Ma, Jing; Tan, Liying; Shen, Tao

2013-08-01

CMOS is a good candidate tracking detector for satellite optical communications systems with outstanding feature of sub-window for the development of APS (Active Pixel Sensor) technology. For inter-satellite optical communications it is critical to estimate the direction of incident laser beam precisely by measuring the centroid position of incident beam spot. The presence of detector noise results in measurement error, which degrades the tracking performance of systems. In this research, the measurement error of CMOS is derived taking consideration of detector noise. It is shown that the measurement error depends on pixel noise, size of the tracking sub-window (pixels number), intensity of incident laser beam, relative size of beam spot. The influences of these factors are analyzed by numerical simulation. We hope the results obtained in this research will be helpful in the design of CMOS detector satellite optical communications systems.

Vulnerability of CMOS image sensors in Megajoule Class Laser harsh environment.

PubMed

Goiffon, V; Girard, S; Chabane, A; Paillet, P; Magnan, P; Cervantes, P; Martin-Gonthier, P; Baggio, J; Estribeau, M; Bourgade, J-L; Darbon, S; Rousseau, A; Glebov, V Yu; Pien, G; Sangster, T C

2012-08-27

CMOS image sensors (CIS) are promising candidates as part of optical imagers for the plasma diagnostics devoted to the study of fusion by inertial confinement. However, the harsh radiative environment of Megajoule Class Lasers threatens the performances of these optical sensors. In this paper, the vulnerability of CIS to the transient and mixed pulsed radiation environment associated with such facilities is investigated during an experiment at the OMEGA facility at the Laboratory for Laser Energetics (LLE), Rochester, NY, USA. The transient and permanent effects of the 14 MeV neutron pulse on CIS are presented. The behavior of the tested CIS shows that active pixel sensors (APS) exhibit a better hardness to this harsh environment than a CCD. A first order extrapolation of the reported results to the higher level of radiation expected for Megajoule Class Laser facilities (Laser Megajoule in France or National Ignition Facility in the USA) shows that temporarily saturated pixels due to transient neutron-induced single event effects will be the major issue for the development of radiation-tolerant plasma diagnostic instruments whereas the permanent degradation of the CIS related to displacement damage or total ionizing dose effects could be reduced by applying well known mitigation techniques.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Proof of principle study of the use of a CMOS active pixel sensor for proton radiography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seco, Joao; Depauw, Nicolas

2011-02-15

Purpose: Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). Methods: A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissuemore » contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Results: Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Conclusion: Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the CMOS detector for protons. The development and use of CMOS in proton radiography could allow in vivo proton range checks, patient setup QA, and real-time tumor tracking.« less

Active pixel as dosimetric device for interventional radiology

NASA Astrophysics Data System (ADS)

Servoli, L.; Baldaccini, F.; Biasini, M.; Checcucci, B.; Chiocchini, S.; Cicioni, R.; Conti, E.; Di Lorenzo, R.; Dipilato, A. C.; Esposito, A.; Fanó, L.; Paolucci, M.; Passeri, D.; Pentiricci, A.; Placidi, P.

2013-08-01

Interventional Radiology (IR) is a subspecialty of radiology comprehensive of all minimally invasive diagnostic and therapeutic procedures performed using radiological devices to obtain image guidance. The interventional procedures are potentially harmful for interventional radiologists and medical staff due to the X-ray diffusion by the patient's body. The characteristic energy range of the diffused photons spans few tens of keV. In this work we will present a proposal for a new X-ray sensing element in the energy range of interest for IR procedures. The sensing element will then be assembled in a dosimeter prototype, capable of real-time measurement, packaged in a small form-factor, with wireless communication and no external power supply to be used for individual operators dosimetry for IR procedures. For the sensor, which is the heart of the system, we considered three different Active Pixel Sensors (APS). They have shown a good capability as single X-ray photon detectors, up to several tens keV photon energy. Two dosimetric quantities have been considered, the number of detected photons and the measured energy deposition. Both observables have a linear dependence with the dose, as measured by commercial dosimeters. The uncertainties in the measurement are dominated by statistic and can be pushed at ˜5% for all the sensors under test.

Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Chen, Wei; Sheng, Jiangkun

The combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to {sup 60}Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 10{sup 11} n/cm{sup 2} (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 10{supmore » 11} n/cm{sup 2} (1-MeV equivalent neutron fluence), and then exposed to {sup 60}Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (K{sub D}), the dark signal non-uniformity (DSNU), and the noise (V{sub N}) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.« less

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Proton-counting radiography for proton therapy: a proof of principle using CMOS APS technology

NASA Astrophysics Data System (ADS)

Poludniowski, G.; Allinson, N. M.; Anaxagoras, T.; Esposito, M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Price, T.; Evans, P. M.

2014-06-01

Despite the early recognition of the potential of proton imaging to assist proton therapy (Cormack 1963 J. Appl. Phys. 34 2722), the modality is still removed from clinical practice, with various approaches in development. For proton-counting radiography applications such as computed tomography (CT), the water-equivalent-path-length that each proton has travelled through an imaged object must be inferred. Typically, scintillator-based technology has been used in various energy/range telescope designs. Here we propose a very different alternative of using radiation-hard CMOS active pixel sensor technology. The ability of such a sensor to resolve the passage of individual protons in a therapy beam has not been previously shown. Here, such capability is demonstrated using a 36 MeV cyclotron beam (University of Birmingham Cyclotron, Birmingham, UK) and a 200 MeV clinical radiotherapy beam (iThemba LABS, Cape Town, SA). The feasibility of tracking individual protons through multiple CMOS layers is also demonstrated using a two-layer stack of sensors. The chief advantages of this solution are the spatial discrimination of events intrinsic to pixelated sensors, combined with the potential provision of information on both the range and residual energy of a proton. The challenges in developing a practical system are discussed.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Chromatic Modulator for a High-Resolution CCD or APS

NASA Technical Reports Server (NTRS)

Hartley, Frank; Hull, Anthony

2008-01-01

A chromatic modulator has been proposed to enable the separate detection of the red, green, and blue (RGB) color components of the same scene by a single charge-coupled device (CCD), active-pixel sensor (APS), or similar electronic image detector. Traditionally, the RGB color-separation problem in an electronic camera has been solved by use of either (1) fixed color filters over three separate image detectors; (2) a filter wheel that repeatedly imposes a red, then a green, then a blue filter over a single image detector; or (3) different fixed color filters over adjacent pixels. The use of separate image detectors necessitates precise registration of the detectors and the use of complicated optics; filter wheels are expensive and add considerably to the bulk of the camera; and fixed pixelated color filters reduce spatial resolution and introduce color-aliasing effects. The proposed chromatic modulator would not exhibit any of these shortcomings. The proposed chromatic modulator would be an electromechanical device fabricated by micromachining. It would include a filter having a spatially periodic pattern of RGB strips at a pitch equal to that of the pixels of the image detector. The filter would be placed in front of the image detector, supported at its periphery by a spring suspension and electrostatic comb drive. The spring suspension would bias the filter toward a middle position in which each filter strip would be registered with a row of pixels of the image detector. Hard stops would limit the excursion of the spring suspension to precisely one pixel row above and one pixel row below the middle position. In operation, the electrostatic comb drive would be actuated to repeatedly snap the filter to the upper extreme, middle, and lower extreme positions. This action would repeatedly place a succession of the differently colored filter strips in front of each pixel of the image detector. To simplify the processing, it would be desirable to encode information on the color of the filter strip over each row (or at least over some representative rows) of pixels at a given instant of time in synchronism with the pixel output at that instant.

Autonomous star sensor ASTRO APS: flight experience on Alphasat

NASA Astrophysics Data System (ADS)

Schmidt, U.; Fiksel, T.; Kwiatkowski, A.; Steinbach, I.; Pradarutti, B.; Michel, K.; Benzi, E.

2015-06-01

Jena-Optronik GmbH, located in Jena/Germany, has profound experience in designing and manufacturing star trackers since the early 80s. Today the company has a worldwide leading position in supplying geo-stationary and Earth observation satellites with robust and reliable star tracker systems. In the first decade of the new century Jena-Optronik received a development contract (17317/2003/F/WE) from the European Space Agency to establish the technologically challenging elements for which advanced star tracker technologies as CMOS Active Pixel Sensors were being introduced or were considered strategic. This activity was performed in the frame of the Alphabus large platform pre-development lead by ESA and the industrial Joint Project Team consisting of Astrium (now Airbus Defence and Space), Thales Alenia Space and CNES (Centre national d'études spatiales). The new autonomous star tracker, ASTRO APS (Active Pixel Sensor), extends the Jena-Optronik A stro-series CCD-based star tracker products taken the full benefit of the CMOS APS technology. ASTRO APS is a fully autonomous compact star tracker carrying either the space-qualified radiation hard STAR1000 or the HAS2 APS detectors. The star tracker is one of four Technology Demonstration Payloads (TDP6) carried by Alphasat as hosted payload in the frame of a successful Private Public Partnership between ESA and Inmarsat who owns and operates the satellite as part of its geo-stationary communication satellites fleet. TDP6 supports also directly TDP1, a Laser Communication Terminal, for fine pointing tasks. Alphasat was flawlessly brought in orbit at the end of July 2013 by a European Ariane 5 launcher. Only a few hours after launch the star tracker received its switch ON command and acquired nominally within 6 s the inertial 3-axes attitude. In the following days of the early in-orbit operations of Alphasat the TDP6 unit tracked reliably all the spacecraft maneuvers including the 0.1 and 0.2°/s spin stabilization for Sun pointing, all of the apogee engine thrusts, Moon field of view transits and recovered to stable tracking after several Earth and Sun blindings before the spacecraft entered a preliminary Earth pointing in a nominal geo-stationary attitude. The Jena-Optronik TDP6 operation center received daily the star tracker status and attitude data. The huge amount of acquired raw data has been evaluated to characterize the ASTRO APS (STAR1000) star tracker in-orbit performance. The paper will present in detail these data processing activities and will show the extraordinary good results. Due to the diverse transfer orbit satellite operations the key performance star tracker data like attitude random noise, single star noise, star brightness measurement, baffle Sun exclusion angle, temperature control, etc., could be derived and have been compared to the ground based laboratory and field measurements. The ultimate performance parameters achieved and verified as well as the lessons learned from the comparison to the ground test data are summarized in the conclusion of the paper.

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

A two-step A/D conversion and column self-calibration technique for low noise CMOS image sensors.

PubMed

Bae, Jaeyoung; Kim, Daeyun; Ham, Seokheon; Chae, Youngcheol; Song, Minkyu

2014-07-04

In this paper, a 120 frames per second (fps) low noise CMOS Image Sensor (CIS) based on a Two-Step Single Slope ADC (TS SS ADC) and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times) than that of the Single Slope ADC (SS ADC). However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN) is also described. The proposed chip has been fabricated with 0.13 μm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS). The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB.

Method and apparatus of high dynamic range image sensor with individual pixel reset

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric R. (Inventor)

2001-01-01

A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

A high efficiency readout architecture for a large matrix of pixels.

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Giorgi, F.; Villa, M.

2010-07-01

In this work we present a fast readout architecture for silicon pixel matrix sensors that has been designed to sustain very high rates, above 1 MHz/mm2 for matrices greater than 80k pixels. This logic can be implemented within MAPS (Monolithic Active Pixel Sensors), a kind of high resolution sensor that integrates on the same bulk the sensor matrix and the CMOS logic for readout, but it can be exploited also with other technologies. The proposed architecture is based on three main concepts. First of all, the readout of the hits is performed by activating one column at a time; all the fired pixels on the active column are read, sparsified and reset in parallel in one clock cycle. This implies the use of global signals across the sensor matrix. The consequent reduction of metal interconnections improves the active area while maintaining a high granularity (down to a pixel pitch of 40 μm). Secondly, the activation for readout takes place only for those columns overlapping with a certain fired area, thus reducing the sweeping time of the whole matrix and reducing the pixel dead-time. Third, the sparsification (x-y address labeling of the hits) is performed with a lower granularity with respect to single pixels, by addressing vertical zones of 8 pixels each. The fine-grain Y resolution is achieved by appending the zone pattern to the zone address of a hit. We show then the benefits of this technique in presence of clusters. We describe this architecture from a schematic point of view, then presenting the efficiency results obtained by VHDL simulations.

Multifocal Fluorescence Microscope for Fast Optical Recordings of Neuronal Action Potentials

PubMed Central

Shtrahman, Matthew; Aharoni, Daniel B.; Hardy, Nicholas F.; Buonomano, Dean V.; Arisaka, Katsushi; Otis, Thomas S.

2015-01-01

In recent years, optical sensors for tracking neural activity have been developed and offer great utility. However, developing microscopy techniques that have several kHz bandwidth necessary to reliably capture optically reported action potentials (APs) at multiple locations in parallel remains a significant challenge. To our knowledge, we describe a novel microscope optimized to measure spatially distributed optical signals with submillisecond and near diffraction-limit resolution. Our design uses a spatial light modulator to generate patterned illumination to simultaneously excite multiple user-defined targets. A galvanometer driven mirror in the emission path streaks the fluorescence emanating from each excitation point during the camera exposure, using unused camera pixels to capture time varying fluorescence at rates that are ∼1000 times faster than the camera’s native frame rate. We demonstrate that this approach is capable of recording Ca2+ transients resulting from APs in neurons labeled with the Ca2+ sensor Oregon Green Bapta-1 (OGB-1), and can localize the timing of these events with millisecond resolution. Furthermore, optically reported APs can be detected with the voltage sensitive dye DiO-DPA in multiple locations within a neuron with a signal/noise ratio up to ∼40, resolving delays in arrival time along dendrites. Thus, the microscope provides a powerful tool for photometric measurements of dynamics requiring submillisecond sampling at multiple locations. PMID:25650920

Monolithic Active Pixel Sensors

NASA Astrophysics Data System (ADS)

Lutz, P.

In close collaboration with the group from Strasbourg, Saclay has been developing fast monolithic active pixel sensors for future vertex detectors. This presentation gives some recent results from the MIMOSA serie, emphazising the participation of the group.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

Photon small-field measurements with a CMOS active pixel sensor.

PubMed

Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

2015-06-07

In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

Subpixel mapping and test beam studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS inner detector upgrade

NASA Astrophysics Data System (ADS)

Bisanz, T.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.

2017-08-01

The upgrade to the High Luminosity Large Hadron Collider will increase the instantaneous luminosity by more than a factor of 5, thus creating significant challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives to the well-established hybrid design using passive sensors since they allow for smaller pixel sizes and cost effective production. This article presents studies of a high-voltage CMOS active pixel sensor designed for the ATLAS tracker upgrade. The sensor is glued to the read-out chip of the Insertable B-Layer, forming a capacitively coupled pixel detector. The pixel pitch of the device under test is 33× 125 μm2, while the pixels of the read-out chip have a pitch of 50× 250 μm2. Three pixels of the CMOS device are connected to one read-out pixel, the information of which of these subpixels is hit is encoded in the amplitude of the output signal (subpixel encoding). Test beam measurements are presented that demonstrate the usability of this subpixel encoding scheme.

Solar XUV Imaging and Non-dispersive Spectroscopy for Solar-C Enabled by Scientific CMOS APS Arrays

NASA Astrophysics Data System (ADS)

Stern, Robert A.; Lemen, J. R.; Shing, L.; Janesick, J.; Tower, J.

2009-05-01

Monolithic CMOS Advanced Pixel Sensor (APS) arrays are showing great promise as eventual replacements for the current workhorse of solar physics focal planes, the scientific CCD. CMOS APS devices have individually addressable pixels, increased radiation tolerance compared to CCDs, and require lower clock voltages, and thus lower power. However, commercially available CMOS chips, while suitable for use with intensifiers or fluorescent coatings, are generally not optimized for direct detection of EUV and X-ray photons. A high performance scientific CMOS array designed for these wavelengths will have significant new capabilities compared to CCDs, including the ability to read out small regions of the solar disk at high (sub sec) cadence, count single X-ray photons with Fano-limited energy resolution, and even operate at room temperature with good noise performance. Such capabilities will be crucial for future solar X-ray and EUV missions such as Solar-C. Sarnoff Corporation has developed scientific grade, monolithic CMOS arrays for X-ray imaging and photon counting. One prototype device, the "minimal" array, has 8 um pixels, is 15 to 25 um thick, is fabricated on high-resistivity ( 10 to 20 kohm-cm) Si wafers, and can be back-illuminated. These characteristics yield high quantum efficiency and high spatial resolution with minimal charge sharing among pixels, making it ideal for the detection of keV X-rays. When used with digital correlated double sampling, the array has demonstrated noise performance as low as 2 e, allowing single photon counting of X-rays over a range of temperatures. We report test results for this device in X-rays, and discuss the implications for future solar space missions.

A Brightness-Referenced Star Identification Algorithm for APS Star Trackers

PubMed Central

Zhang, Peng; Zhao, Qile; Liu, Jingnan; Liu, Ning

2014-01-01

Star trackers are currently the most accurate spacecraft attitude sensors. As a result, they are widely used in remote sensing satellites. Since traditional charge-coupled device (CCD)-based star trackers have a limited sensitivity range and dynamic range, the matching process for a star tracker is typically not very sensitive to star brightness. For active pixel sensor (APS) star trackers, the intensity of an imaged star is valuable information that can be used in star identification process. In this paper an improved brightness referenced star identification algorithm is presented. This algorithm utilizes the k-vector search theory and adds imaged stars' intensities to narrow the search scope and therefore increase the efficiency of the matching process. Based on different imaging conditions (slew, bright bodies, etc.) the developed matching algorithm operates in one of two identification modes: a three-star mode, and a four-star mode. If the reference bright stars (the stars brighter than three magnitude) show up, the algorithm runs the three-star mode and efficiency is further improved. The proposed method was compared with other two distinctive methods the pyramid and geometric voting methods. All three methods were tested with simulation data and actual in orbit data from the APS star tracker of ZY-3. Using a catalog composed of 1500 stars, the results show that without false stars the efficiency of this new method is 4∼5 times that of the pyramid method and 35∼37 times that of the geometric method. PMID:25299950

A brightness-referenced star identification algorithm for APS star trackers.

PubMed

Zhang, Peng; Zhao, Qile; Liu, Jingnan; Liu, Ning

2014-10-08

Star trackers are currently the most accurate spacecraft attitude sensors. As a result, they are widely used in remote sensing satellites. Since traditional charge-coupled device (CCD)-based star trackers have a limited sensitivity range and dynamic range, the matching process for a star tracker is typically not very sensitive to star brightness. For active pixel sensor (APS) star trackers, the intensity of an imaged star is valuable information that can be used in star identification process. In this paper an improved brightness referenced star identification algorithm is presented. This algorithm utilizes the k-vector search theory and adds imaged stars' intensities to narrow the search scope and therefore increase the efficiency of the matching process. Based on different imaging conditions (slew, bright bodies, etc.) the developed matching algorithm operates in one of two identification modes: a three-star mode, and a four-star mode. If the reference bright stars (the stars brighter than three magnitude) show up, the algorithm runs the three-star mode and efficiency is further improved. The proposed method was compared with other two distinctive methods the pyramid and geometric voting methods. All three methods were tested with simulation data and actual in orbit data from the APS star tracker of ZY-3. Using a catalog composed of 1500 stars, the results show that without false stars the efficiency of this new method is 4~5 times that of the pyramid method and 35~37 times that of the geometric method.

ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Mager, M.; ALICE Collaboration

2016-07-01

A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

Preliminary investigations of active pixel sensors in Nuclear Medicine imaging

NASA Astrophysics Data System (ADS)

Ott, Robert; Evans, Noel; Evans, Phil; Osmond, J.; Clark, A.; Turchetta, R.

2009-06-01

Three CMOS active pixel sensors have been investigated for their application to Nuclear Medicine imaging. Startracker with 525×525 25 μm square pixels has been coupled via a fibre optic stud to a 2 mm thick segmented CsI(Tl) crystal. Imaging tests were performed using 99mTc sources, which emit 140 keV gamma rays. The system was interfaced to a PC via FPGA-based DAQ and optical link enabling imaging rates of 10 f/s. System noise was measured to be >100e and it was shown that the majority of this noise was fixed pattern in nature. The intrinsic spatial resolution was measured to be ˜80 μm and the system spatial resolution measured with a slit was ˜450 μm. The second sensor, On Pixel Intelligent CMOS (OPIC), had 64×72 40 μm pixels and was used to evaluate noise characteristics and to develop a method of differentiation between fixed pattern and statistical noise. The third sensor, Vanilla, had 520×520 25 μm pixels and a measured system noise of ˜25e. This sensor was coupled directly to the segmented phosphor. Imaging results show that even at this lower level of noise the signal from 140 keV gamma rays is small as the light from the phosphor is spread over a large number of pixels. Suggestions for the 'ideal' sensor are made.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Sheu, Bing J.; Venus, Holger; Sandau, Rainer

1997-01-01

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

CMOS Image Sensors: Electronic Camera On A Chip

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

3D track reconstruction capability of a silicon hybrid active pixel detector

NASA Astrophysics Data System (ADS)

Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

2017-06-01

Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-06-01

Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. The AERD data-driven readout architecture operates the address encoding and reset decoding based on an arbitration tree, and allows us to readout only the hit pixels. Compared to the traditional readout structure of the rolling shutter scheme in Monolithic Active Pixel Sensors (MAPS), AERD can achieve a low readout time and a low power consumption especially for low hit occupancies. The readout is controlled at the chip periphery with a signal synchronous with the clock, allows a good digital and analogue signal separation in the matrix and a reduction of the power consumption. The AERD circuit has been implemented in the TowerJazz 180 nm CMOS Imaging Sensor (CIS) process with full complementary CMOS logic in the pixel. It works at 10 MHz with a matrix height of 15 mm. The energy consumed to read out one pixel is around 72 pJ. A scheme to boost the readout speed to 40 MHz is also discussed. The sensor chip equipped with AERD has been produced and characterised. Test results including electrical beam measurement are presented.

Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

NASA Astrophysics Data System (ADS)

Kim, D.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Lattuca, A.; Mager, M.; Sielewicz, K. M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Pham, T. H.; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. W.; Yang, P.

2016-02-01

ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

PubMed Central

El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

2009-01-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of ∼560 e (rms) for PSI-3. PMID:19673229

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

PubMed

El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

2009-07-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of approximately 560 e (rms) for PSI-3.

Characterisation of Vanilla—A novel active pixel sensor for radiation detection

NASA Astrophysics Data System (ADS)

Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.

2007-10-01

Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Fossum, E.; Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Zhou, Z.;

Carrier Plus: A sensor payload for Living With a Star Space Environment Testbed (LWS/SET)

NASA Technical Reports Server (NTRS)

Marshall, Cheryl J.; Moss, Steven; Howard, Regan; LaBel, Kenneth A.; Grycewicz, Tom; Barth, Janet L.; Brewer, Dana

2003-01-01

The Defense Threat Reduction Agency (DTR4) and National Aeronautics and Space Administration (NASA) Goddard Space Flight Center are collaborating to develop the Carrier Plus sensor experiment platform as a capability of the Space Environments Testbed (SET). The Space Environment Testbed (SET) provides flight opportunities for technology experiments as part of NASA's Living With a Star (LWS) program. The Carrier Plus will provide new capability to characterize sensor technologies such as state-of-the-art visible focal plane arrays (FPAs) in a natural space radiation environment. The technical objectives include on-orbit validation of recently developed FPA technologies and performance prediction methodologies, as well as characterization of the FPA radiation response to total ionizing dose damage, displacement damage and transients. It is expected that the sensor experiment will carry 4-6 FPAs and associated radiation correlative environment monitors (CEMs) for a 2006-2007 launch. Sensor technology candidates may include n- and p-charge coupled devices (CCDs), active pixel sensors (APS), and hybrid CMOS arrays. The presentation will describe the Carrier Plus goals and objectives, as well as provide details about the architecture and design. More information on the LWS program can be found at http://lws.gsfc.nasa.gov/. Business announcements for LWS/SET and program briefings are posted at http://lws-set.gsfc.nasa.gov

CMOS active pixel sensors response to low energy light ions

NASA Astrophysics Data System (ADS)

Spiriti, E.; Finck, Ch.; Baudot, J.; Divay, C.; Juliani, D.; Labalme, M.; Rousseau, M.; Salvador, S.; Vanstalle, M.; Agodi, C.; Cuttone, G.; De Napoli, M.; Romano, F.

2017-12-01

Recently CMOS active pixel sensors have been used in Hadrontherapy ions fragmentation cross section measurements. Their main goal is to reconstruct tracks generated by the non interacting primary ions or by the produced fragments. In this framework the sensors, unexpectedly, demonstrated the possibility to obtain also some informations that could contribute to the ion type identification. The present analysis shows a clear dependency in charge and number of pixels per cluster (pixels with a collected amount of charge above a given threshold) with both fragment atomic number Z and energy loss in the sensor. This information, in the FIRST (F ragmentation of I ons R elevant for S pace and T herapy) experiment, has been used in the overall particle identification analysis algorithm. The aim of this paper is to present the data analysis and the obtained results. An empirical model was developed, in this paper, that reproduce the cluster size as function of the deposited energy in the sensor.

Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

NASA Astrophysics Data System (ADS)

Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

2011-01-01

In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

Tests of monolithic active pixel sensors at national synchrotron light source

NASA Astrophysics Data System (ADS)

Deptuch, G.; Besson, A.; Carini, G. A.; Siddons, D. P.; Szelezniak, M.; Winter, M.

2007-01-01

The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17×17 μm2 and was designed in a 0.6 μm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented.

Optical-to-Tactile Translator

NASA Technical Reports Server (NTRS)

Langevin, Maurice L. (Inventor); Moynihan, Philip I. (Inventor)

2000-01-01

An optical-to-tactile translator provides an aid for the visually impaired by translating a near-field scene to a tactile signal corresponding to said near-field scene. An optical sensor using a plurality of active pixel sensors (APS) converts the optical image within the near-field scene to a digital signal. The digital signal is then processed by a microprocessor and a simple shape signal is generated based on the digital signal. The shape signal is then communicated to a tactile transmitter where the shape signal is converted into a tactile signal using a series of contacts. The shape signal may be an outline of the significant shapes determined in the near-field scene, or the shape signal may comprise a simple symbolic representation of common items encountered repeatedly. The user is thus made aware of the unseen near-field scene, including potential obstacles and dangers, through a series of tactile contacts. In a preferred embodiment, a range determining device such as those commonly found on auto-focusing cameras is included to limit the distance that the optical sensor interprets the near-field scene.

The FoCal prototype—an extremely fine-grained electromagnetic calorimeter using CMOS pixel sensors

NASA Astrophysics Data System (ADS)

de Haas, A. P.; Nooren, G.; Peitzmann, T.; Reicher, M.; Rocco, E.; Röhrich, D.; Ullaland, K.; van den Brink, A.; van Leeuwen, M.; Wang, H.; Yang, S.; Zhang, C.

2018-01-01

A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixel size of 30 μm it allows digital calorimetry, i.e. the particle's energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. In this article the construction and tuning of the prototype is described. Results from beam tests are compared with predictions of GEANT-based Monte Carlo simulations. The shape of showers caused by electrons is shown in unprecedented detail. Results for energy and position resolution are also given.

Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging

NASA Astrophysics Data System (ADS)

Pocas, S.; Perenzoni, M.; Massari, N.; Simoens, F.; Meilhan, J.; Rabaud, W.; Martin, S.; Delplanque, B.; Imperinetti, P.; Goudon, V.; Vialle, C.; Arnaud, A.

2012-10-01

Fusion of multispectral images has been explored for many years for security and used in a number of commercial products. CEA-Leti and FBK have developed an innovative sensor technology that gathers monolithically on a unique focal plane arrays, pixels sensitive to radiation in three spectral ranges that are terahertz (THz), infrared (IR) and visible. This technology benefits of many assets for volume market: compactness, full CMOS compatibility on 200mm wafers, advanced functions of the CMOS read-out integrated circuit (ROIC), and operation at room temperature. The ROIC houses visible APS diodes while IR and THz detections are carried out by microbolometers collectively processed above the CMOS substrate. Standard IR bolometric microbridges (160x160 pixels) are surrounding antenna-coupled bolometers (32X32 pixels) built on a resonant cavity customized to THz sensing. This paper presents the different technological challenges achieved in this development and first electrical and sensitivity experimental tests.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

Luminance compensation for AMOLED displays using integrated MIS sensors

NASA Astrophysics Data System (ADS)

Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela

2017-05-01

Active-matrix organic light-emitting diodes (AMOLEDs) are ideal for future TV applications due to their ability to faithfully reproduce real images. However, pixel luminance can be affected by instability of driver TFTs and aging effect in OLEDs. This paper reports on a pixel driver utilizing a metal-insulator-semiconductor (MIS) sensor for luminance control of the OLED element. In the proposed pixel architecture for bottom-emission AMOLEDs, the embedded MIS sensor shares the same layer stack with back-channel etched a Si:H TFTs to maintain the fabrication simplicity. The pixel design for a large-area HD display is presented. The external electronics performs image processing to modify incoming video using correction parameters for each pixel in the backplane, and also sensor data processing to update the correction parameters. The luminance adjusting algorithm is based on realistic models for pixel circuit elements to predict the relation between the programming voltage and OLED luminance. SPICE modeling of the sensing part of the backplane is performed to demonstrate its feasibility. Details on the pixel circuit functionality including the sensing and programming operations are also discussed.

A CMOS active pixel sensor for retinal stimulation

NASA Astrophysics Data System (ADS)

Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

2006-02-01

Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

Noise performance limits of advanced x-ray imagers employing poly-Si-based active pixel architectures

NASA Astrophysics Data System (ADS)

Koniczek, Martin; El-Mohri, Youcef; Antonuk, Larry E.; Liang, Albert; Zhao, Qihua; Jiang, Hao

2011-03-01

A decade after the clinical introduction of active matrix, flat-panel imagers (AMFPIs), the performance of this technology continues to be limited by the relatively large additive electronic noise of these systems - resulting in significant loss of detective quantum efficiency (DQE) under conditions of low exposure or high spatial frequencies. An increasingly promising approach for overcoming such limitations involves the incorporation of in-pixel amplification circuits, referred to as active pixel architectures (AP) - based on low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). In this study, a methodology for theoretically examining the limiting noise and DQE performance of circuits employing 1-stage in-pixel amplification is presented. This methodology involves sophisticated SPICE circuit simulations along with cascaded systems modeling. In these simulations, a device model based on the RPI poly-Si TFT model is used with additional controlled current sources corresponding to thermal and flicker (1/f) noise. From measurements of transfer and output characteristics (as well as current noise densities) performed upon individual, representative, poly-Si TFTs test devices, model parameters suitable for these simulations are extracted. The input stimuli and operating-point-dependent scaling of the current sources are derived from the measured current noise densities (for flicker noise), or from fundamental equations (for thermal noise). Noise parameters obtained from the simulations, along with other parametric information, is input to a cascaded systems model of an AP imager design to provide estimates of DQE performance. In this paper, this method of combining circuit simulations and cascaded systems analysis to predict the lower limits on additive noise (and upper limits on DQE) for large area AP imagers with signal levels representative of those generated at fluoroscopic exposures is described, and initial results are reported.

Resolution Properties of a Calcium Tungstate (CaWO4) Screen Coupled to a CMOS Imaging Detector

NASA Astrophysics Data System (ADS)

Koukou, Vaia; Martini, Niki; Valais, Ioannis; Bakas, Athanasios; Kalyvas, Nektarios; Lavdas, Eleftherios; Fountos, George; Kandarakis, Ioannis; Michail, Christos

2017-11-01

The aim of the current work was to assess the resolution properties of a calcium tungstate (CaWO4) screen (screen coating thickness: 50.09 mg/cm2, actual thickness: 167.2 μm) coupled to a high resolution complementary metal oxide semiconductor (CMOS) digital imaging sensor. A 2.7x3.6 cm2 CaWO4 sample was extracted from an Agfa Curix universal screen and was coupled directly with the active area of the active pixel sensor (APS) CMOS sensor. Experiments were performed following the new IEC 62220-1-1:2015 International Standard, using an RQA-5 beam quality. Resolution was assessed in terms of the Modulation Transfer Function (MTF), using the slanted-edge method. The CaWO4/CMOS detector configuration was found with linear response, in the exposure range under investigation. The final MTF was obtained through averaging the oversampled edge spread function (ESF), using a custom-made software developed by our team, according to the IEC 62220-1-1:2015. Considering the renewed interest in calcium tungstate for various applications, along with the resolution results of this work, CaWO4 could be also considered for use in X-ray imaging devices such as charged-coupled devices (CCD) and CMOS.

Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

PubMed Central

Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

2011-01-01

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples. PMID:22163893

Can direct electron detectors outperform phosphor-CCD systems for TEM?

NASA Astrophysics Data System (ADS)

Moldovan, G.; Li, X.; Kirkland, A.

2008-08-01

A new generation of imaging detectors is being considered for application in TEM, but which device architectures can provide the best images? Monte Carlo simulations of the electron-sensor interaction are used here to calculate the expected modulation transfer of monolithic active pixel sensors (MAPS), hybrid active pixel sensors (HAPS) and double sided Silicon strip detectors (DSSD), showing that ideal and nearly ideal transfer can be obtained using DSSD and MAPS sensors. These results highly recommend the replacement of current phosphor screen and charge coupled device imaging systems with such new directly exposed position sensitive electron detectors.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

The INFN-FBK pixel R&D program for HL-LHC

NASA Astrophysics Data System (ADS)

Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

2016-09-01

We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

NASA Astrophysics Data System (ADS)

Savic, N.; Beyer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.

2016-12-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Study of cluster shapes in a monolithic active pixel detector

NASA Astrophysics Data System (ADS)

Maçzewski, ł.; Adamus, M.; Ciborowski, J.; Grzelak, G.; łużniak, P.; Nieżurawski, P.; Żarnecki, A. F.

2009-11-01

Beamstrahlung will constitute an important source of background in a pixel vertex detector at the future International Linear Collider. Electron and positron tracks of this origin impact the pixel planes at angles generally larger than those of secondary hadrons and the corresponding clusters are elongated. We report studies of cluster characteristics using test beam electron tracks incident at various angles on a MIMOSA-5 monolithic active pixel sensor matrix.

Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical finite element simulations

NASA Astrophysics Data System (ADS)

Weatherill, Daniel P.; Stefanov, Konstantin D.; Greig, Thomas A.; Holland, Andrew D.

2014-07-01

Pixellated monolithic silicon detectors operated in a photon-counting regime are useful in spectroscopic imaging applications. Since a high energy incident photon may produce many excess free carriers upon absorption, both energy and spatial information can be recovered by resolving each interaction event. The performance of these devices in terms of both the energy and spatial resolution is in large part determined by the amount of diffusion which occurs during the collection of the charge cloud by the pixels. Past efforts to predict the X-ray performance of imaging sensors have used either analytical solutions to the diffusion equation or simplified monte carlo electron transport models. These methods are computationally attractive and highly useful but may be complemented using more physically detailed models based on TCAD simulations of the devices. Here we present initial results from a model which employs a full transient numerical solution of the classical semiconductor equations to model charge collection in device pixels under stimulation from initially Gaussian photogenerated charge clouds, using commercial TCAD software. Realistic device geometries and doping are included. By mapping the pixel response to different initial interaction positions and charge cloud sizes, the charge splitting behaviour of the model sensor under various illuminations and operating conditions is investigated. Experimental validation of the model is presented from an e2v CCD30-11 device under varying substrate bias, illuminated using an Fe-55 source.

Bonding techniques for hybrid active pixel sensors (HAPS)

NASA Astrophysics Data System (ADS)

Bigas, M.; Cabruja, E.; Lozano, M.

2007-05-01

A hybrid active pixel sensor (HAPS) consists of an array of sensing elements which is connected to an electronic read-out unit. The most used way to connect these two different devices is bump bonding. This interconnection technique is very suitable for these systems because it allows a very fine pitch and a high number of I/Os. However, there are other interconnection techniques available such as direct bonding. This paper, as a continuation of a review [M. Lozano, E. Cabruja, A. Collado, J. Santander, M. Ullan, Nucl. Instr. and Meth. A 473 (1-2) (2001) 95-101] published in 2001, presents an update of the different advanced bonding techniques available for manufacturing a hybrid active pixel detector.

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Improved Space Object Orbit Determination Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario a sensor in a sun-synchronous LEO orbit, always pointing in the anti-sun direction to achieve optimum illumination conditions for small LEO debris, was simulated. For the space-based scenario the simulations showed a 20 130 % improvement of the accuracy of all orbital parameters when varying the frame rate from 1/3 fps, which is the fastest rate for a typical CCD detector, to 50 fps, which represents the highest rate of scientific CMOS cameras. Changing the epoch registration accuracy from a typical 20.0 ms for a mechanical shutter to 0.025 ms, the theoretical value for the electronic shutter of a CMOS camera, improved the orbit accuracy by 4 to 190 %. The ground-based scenario also benefit from the specific CMOS characteristics, but to a lesser extent.

Science Observations of Deep Space One

NASA Technical Reports Server (NTRS)

Nelson, Robert M.; Baganal, Fran; Boice, Daniel C.; Britt, Daniel T.; Brown, Robert H.; Buratti, Bonnie J.; Creary, Frank; Ip, Wing-Huan; Meier, Roland; Oberst, Juergen

1999-01-01

During the Deep Space One (DS1) primary mission, the spacecraft will fly by asteroid 1992 KD and possibly comet Borrelly. There are two technologies being validated on DS1 that will provide science observations of these targets, the Miniature Integrated Camera Spectrometer (MICAS) and the Plasma Experiment for Planetary Exploration (PEPE). MICAS encompasses a camera, an ultraviolet imaging spectrometer and an infrared imaging spectrometer. PEPE combines an ion and electron analyzer designed to determine the three-dimensional distribution of plasma over its field of view. MICAS includes two visible wavelength imaging channels, an ultraviolet imaging spectrometer, and an infrared imaging spectrometer all of which share a single 10-cm diameter telescope. Two types of visible wavelength detectors, both operating between about 500 and 1000 nm are used: a CCD with 13-microrad pixels and an 18-microrad-per-pixel, metal-on-silicon active pixel sensor (APS). Unlike the CCD the APS includes the timing and control electronics on the chip along with the detector. The UV spectrometer spans 80 to 185 nm with 0.64-nm spectral resolution and 316-microrad pixels. The IR spectrometer covers the range from 1200 to 2400 nm with 6.6-nm resolution and 54-microrad pixels PEPE includes a very low-power, low-mass micro-calorimeter to help understand plasma-surface interactions and a plasma analyzer to identify de individual molecules and atoms in the immediate vicinity of the spacecraft that have been eroded off the surface of asteroid 1992 KD. It employs common apertures with separate electrostatic energy analyzers. It measures electron and ion energies spanning a range of 3 eV to 30 keV, with a resolution of five percent. and measures ion mass from one to 135 atomic mass units with 5 percent resolution. It electrostatically sweeps its field of view both in elevation and azimuth. Both MICAS and PEPE represent a new direction for the evolution of science instruments for interplanetary spacecraft. These two instruments incorporate a large fraction of the capability of five instruments that had typically flown on NASA's deep space missions The Deep Space One science team acknowledges the support of Philip Varghese, David H. Lehman, Leslie Livesay, and Marc Rayman for providing invaluable assistance in making the science observations possible.

Assessment and Prediction of Natural Hazards from Satellite Imagery

PubMed Central

Gillespie, Thomas W.; Chu, Jasmine; Frankenberg, Elizabeth; Thomas, Duncan

2013-01-01

Since 2000, there have been a number of spaceborne satellites that have changed the way we assess and predict natural hazards. These satellites are able to quantify physical geographic phenomena associated with the movements of the earth’s surface (earthquakes, mass movements), water (floods, tsunamis, storms), and fire (wildfires). Most of these satellites contain active or passive sensors that can be utilized by the scientific community for the remote sensing of natural hazards over a number of spatial and temporal scales. The most useful satellite imagery for the assessment of earthquake damage comes from high-resolution (0.6 m to 1 m pixel size) passive sensors and moderate resolution active sensors that can quantify the vertical and horizontal movement of the earth’s surface. High-resolution passive sensors have been used to successfully assess flood damage while predictive maps of flood vulnerability areas are possible based on physical variables collected from passive and active sensors. Recent moderate resolution sensors are able to provide near real time data on fires and provide quantitative data used in fire behavior models. Limitations currently exist due to atmospheric interference, pixel resolution, and revisit times. However, a number of new microsatellites and constellations of satellites will be launched in the next five years that contain increased resolution (0.5 m to 1 m pixel resolution for active sensors) and revisit times (daily ≤ 2.5 m resolution images from passive sensors) that will significantly improve our ability to assess and predict natural hazards from space. PMID:25170186

Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

NASA Astrophysics Data System (ADS)

Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Giubilato, P.; Hillemanns, H.; Junique, A.; Keil, M.; Kim, D.; Kim, J.; Kugathasan, T.; Lattuca, A.; Mager, M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mattiazzo, S.; Mazza, G.; Mugnier, H.; Musa, L.; Pantano, D.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Siddhanta, S.; Snoeys, W.; Usai, G.; van Hoorne, J. W.; Yang, P.; Yi, J.

2013-12-01

ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. The TowerJazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel due to the offering of a deep pwell and also to use different starting materials. The ALPIDE development is an alternative to approaches based on a rolling shutter architecture, and aims to reduce power consumption and integration time by an order of magnitude below the ALICE specifications, which would be quite beneficial in terms of material budget and background. The approach is based on an in-pixel binary front-end combined with a hit-driven architecture. Several prototypes have already been designed, submitted for fabrication and some of them tested with X-ray sources and particles in a beam. Analog power consumption has been limited by optimizing the Q/C of the sensor using Explorer chips. Promising but preliminary first results have also been obtained with a prototype ALPIDE. Radiation tolerance up to the ALICE requirements has also been verified.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Measurements and simulations of MAPS (Monolithic Active Pixel Sensors) response to charged particles - a study towards a vertex detector at the ILC

NASA Astrophysics Data System (ADS)

Maczewski, Lukasz

2010-05-01

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 μm pixel pitch) and MIMOSA-18 (10 μm pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by intense beamsstrahlung background of electrons and positrons hitting inner planes of the vertex detector. Tracks of this origin leave elongated clusters contrary to those of secondary hadrons. Cluster characteristics and orientation with respect to the pixels netting are studied for perpendicular and inclined tracks. Elongation and precision of determining the cluster orientation as a function of the angle of incidence were measured. A simple model of signal formation (based on charge diffusion) is proposed and tested using the collected data.

Active pixel image sensor with a winner-take-all mode of operation

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Mead, Carver (Inventor); Fossum, Eric R. (Inventor)

2003-01-01

An integrated CMOS semiconductor imaging device having two modes of operation that can be performed simultaneously to produce an output image and provide information of a brightest or darkest pixel in the image.

Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

NASA Astrophysics Data System (ADS)

Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

2018-02-01

Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

An active pixel sensor to detect diffused X-ray during Interventional Radiology procedure

NASA Astrophysics Data System (ADS)

Servoli, L.; Battisti, D.; Biasini, M.; Checcucci, B.; Conti, E.; Di Lorenzo, R.; Esposito, A.; Fanò, L.; Paolucci, M.; Passeri, D.; Pentiricci, A.; Placidi, P.

2012-04-01

Interventional radiologists and staff members are frequently exposed to protracted and fractionated low doses of ionizing radiation due to diffused X-ray radiation. The authors propose a novel approach to monitor on line staff during their interventions by using a device based on an Active Pixel Sensor developed for tracking applications. Two different photodiode configurations have been tested in standard Interventional Radiology working conditions. Both options have demonstrated the capability to measure the photon flux and the energy flux to a sufficient degree of uncertainty.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE PAGES

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

2016-07-21

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at reasonable cost.

Advancing the technology of monolithic CMOS detectors for use as x-ray imaging spectrometers

NASA Astrophysics Data System (ADS)

Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Amato, Stephen

2017-08-01

The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff has been engaged in a multi year effort to advance the technology of monolithic back-thinned CMOS detectors for use as X-ray imaging spectrometers. The long term goal of this campaign is to produce X-ray Active Pixel Sensor (APS) detectors with Fano limited performance over the 0.1-10keV band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Such devices would be ideal for candidate post 2020 decadal missions such as LYNX and for smaller more immediate applications such as CubeX. Devices from a recent fabrication have been back-thinned, packaged and tested for soft X-ray response. These devices have 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels with ˜135μV/electron sensitivity and a highly parallel signal chain. These new detectors are fabricated on 10μm epitaxial silicon and have a 1k by 1k format. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting X-ray astronomy. These features include read noise, X-ray spectral response and quantum efficiency.

Development of the science instrument CLUPI: the close-up imager on board the ExoMars rover

NASA Astrophysics Data System (ADS)

Josset, J.-L.; Beauvivre, S.; Cessa, V.; Martin, P.

2017-11-01

First mission of the Aurora Exploration Programme of ESA, ExoMars will demonstrate key flight and in situ enabling technologies, and will pursue fundamental scientific investigations. Planned for launch in 2013, ExoMars will send a robotic rover to the surface of Mars. The Close-UP Imager (CLUPI) instrument is part of the Pasteur Payload of the rover fixed on the robotic arm. It is a robotic replacement of one of the most useful instruments of the field geologist: the hand lens. Imaging of surfaces of rocks, soils and wind drift deposits at high resolution is crucial for the understanding of the geological context of any site where the Pasteur rover may be active on Mars. At the resolution provided by CLUPI (approx. 15 micrometer/pixel), rocks show a plethora of surface and internal structures, to name just a few: crystals in igneous rocks, sedimentary structures such as bedding, fracture mineralization, secondary minerals, details of the surface morphology, sedimentary bedding, sediment components, surface marks in sediments, soil particles. It is conceivable that even textures resulting from ancient biological activity can be visualized, such as fine lamination due to microbial mats (stromatolites) and textures resulting from colonies of filamentous microbes, potentially present in sediments and in palaeocavitites in any rock type. CLUPI is a complete imaging system, consisting of an APS (Active Pixel Sensor) camera with 27° FOV optics. The sensor is sensitive to light between 400 and 900 nm with 12 bits digitization. The fixed focus optics provides well focused images of 4 cm x 2.4 cm rock area at a distance of about 10 cm. This challenging camera system, less than 200g, is an independent scientific instrument linked to the rover on board computer via a SpaceWire interface. After the science goals and specifications presentation, the development of this complex high performance miniaturized imaging system will be described.

A novel framework for feature extraction in multi-sensor action potential sorting.

PubMed

Wu, Shun-Chi; Swindlehurst, A Lee; Nenadic, Zoran

2015-09-30

Extracellular recordings of multi-unit neural activity have become indispensable in neuroscience research. The analysis of the recordings begins with the detection of the action potentials (APs), followed by a classification step where each AP is associated with a given neural source. A feature extraction step is required prior to classification in order to reduce the dimensionality of the data and the impact of noise, allowing source clustering algorithms to work more efficiently. In this paper, we propose a novel framework for multi-sensor AP feature extraction based on the so-called Matched Subspace Detector (MSD), which is shown to be a natural generalization of standard single-sensor algorithms. Clustering using both simulated data and real AP recordings taken in the locust antennal lobe demonstrates that the proposed approach yields features that are discriminatory and lead to promising results. Unlike existing methods, the proposed algorithm finds joint spatio-temporal feature vectors that match the dominant subspace observed in the two-dimensional data without needs for a forward propagation model and AP templates. The proposed MSD approach provides more discriminatory features for unsupervised AP sorting applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.

2017-12-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

The Inertial Stellar Compass (ISC): A Multifunction, Low Power, Attitude Determination Technology Breakthrough

NASA Technical Reports Server (NTRS)

Bauer, Frank H. (Technical Monitor); Dennehy, Neil; Gambino, Joel; Maynard, Andrew; Brady, T.; Buckley, S.; Zinchuk, J.

2003-01-01

The Inertial Stellar Compass (ISC) is a miniature, low power, stellar inertial attitude determination system with an accuracy of better than 0.1 degree (1 sigma) in three axes. The ISC consumes only 3.5 Watts of power and is contained in a 2.5 kg package. With its embedded on-board processor, the ISC provides attitude quaternion information and has Lost-in-Space (LIS) initialization capability. The attitude accuracy and LIS capability are provided by combining a wide field of view Active Pixel Sensor (APS) star camera and Micro- ElectroMechanical System (MEMS) inertial sensor information in an integrated sensor system. The performance and small form factor make the ISC a useful sensor for a wide range of missions. In particular, the ISC represents an enabling, fully integrated, micro-satellite attitude determination system. Other applications include using the ISC as a single sensor solution for attitude determination on medium performance spacecraft and as a bolt on independent safe-hold sensor or coarse acquisition sensor for many other spacecraft. NASA's New Millennium Program (NMP) has selected the ISC technology for a Space Technology 6 (ST6) flight validation experiment scheduled for 2004. NMP missions, such a s ST6, are intended to validate advanced technologies that have not flown in space in order to reduce the risk associated with their infusion into future NASA missions. This paper describes the design, operation, and performance of the ISC and outlines the technology validation plan. A number of mission applications for the ISC technology are highlighted, both for the baseline ST6 ISC configuration and more ambitious applications where ISC hardware and software modifications would be required. These applications demonstrate the wide range of Space and Earth Science missions that would benefit from infusion of the ISC technology.

X-ray performance of 0.18 µm CMOS APS test arrays for solar observation

NASA Astrophysics Data System (ADS)

Dryer, B. J.; Holland, A. D.; Jerram, P.; Sakao, Taro

2012-07-01

Solar-C is the third generation solar observatory led by JAXA. The accepted ‘Plan-B’ payload calls for a radiation-hard solar-staring photon-counting x-ray spectrometer. CMOS APS technology offers advantages over CCDs for such an application such as increased radiation hardness and high frame rate (instrument target of 1000 fps). Looking towards the solution of a bespoke CMOS APS, this paper reports the x-ray spectroscopy performance, concentrating on charge collection efficiency and split event analysis, of two baseline e2v CMOS APSs not designed for x-ray performance, the EV76C454 and the Ocean Colour Imager (OCI) test array. The EV76C454 is an industrial 5T APS designed for machine vision, available back and front illuminated. The OCI test arrays have varying pixel design across the chips, but are 4T, back illuminated and have thin low-resistivity and thick high-resistivity variants. The OCI test arrays’ pixel variants allow understanding of how pixel design can affect x-ray performance.

Evaluation of a single-pixel one-transistor active pixel sensor for fingerprint imaging

NASA Astrophysics Data System (ADS)

Xu, Man; Ou, Hai; Chen, Jun; Wang, Kai

2015-08-01

Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

Contrast computation methods for interferometric measurement of sensor modulation transfer function

NASA Astrophysics Data System (ADS)

Battula, Tharun; Georgiev, Todor; Gille, Jennifer; Goma, Sergio

2018-01-01

Accurate measurement of image-sensor frequency response over a wide range of spatial frequencies is very important for analyzing pixel array characteristics, such as modulation transfer function (MTF), crosstalk, and active pixel shape. Such analysis is especially significant in computational photography for the purposes of deconvolution, multi-image superresolution, and improved light-field capture. We use a lensless interferometric setup that produces high-quality fringes for measuring MTF over a wide range of frequencies (here, 37 to 434 line pairs per mm). We discuss the theoretical framework, involving Michelson and Fourier contrast measurement of the MTF, addressing phase alignment problems using a moiré pattern. We solidify the definition of Fourier contrast mathematically and compare it to Michelson contrast. Our interferometric measurement method shows high detail in the MTF, especially at high frequencies (above Nyquist frequency). We are able to estimate active pixel size and pixel pitch from measurements. We compare both simulation and experimental MTF results to a lens-free slanted-edge implementation using commercial software.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

A time-resolved image sensor for tubeless streak cameras

NASA Astrophysics Data System (ADS)

Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

2014-03-01

This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels.

PubMed

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshiari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-09-02

In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

Irreducible 3D Radiative Transfer Effects in Multi-angle/Multi-spectral Radio-Polarimetric Signals (Not Noise!) from a Mixture of Clouds and Aerosol in a Single Large-Footprint Pixel

NASA Astrophysics Data System (ADS)

Davis, A. B.; Qu, Z.; Emde, C.; Xu, F.; Marshak, A.

2013-12-01

Although the Glory satellite mission failed at launch, the atmospheric observation strategy implemented in its Aerosol Polarization Sensor (APS) is alive and well since it is at least possible that another one will be built and launched. This strategy is based on APS's along-track scanning spectro-polarimetric measurement system that captures the three main Stokes vector elements (I,Q,U) at a large number (>200) viewing directions for 9 wavelengths emanating from a single pixel that is ~7 km in diameter at nadir and stretches into a ~7 x 20 km^2 ellipse at the most oblique views to be considered (~70 degrees). Two cloud cameras (CCs) were also onboard Glory to provide spatial context. If the relatively large APS footprint is cloud-free or fully-cloudy, then a 1D vector radiative transfer (RT) model is adequate for predicting the APS signals and, upon iteration over its input parameters, aerosol and cloud property retrievals are expected to be of high quality. And this level of accuracy is indeed required to make a real breakthrough in climate modeling where the radiative properties of aerosols and clouds remain one of the main sources of uncertainty. However, the CCs will often show that the APS's field-of-view is a spatially complex cloud scene, but where we are mostly interested in the ambient aerosols. Moreover, it is precisely these aerosols in contact with clouds that will influence their microphysical and optical properties, leading to the manifold indirect aerosol effects on the climate system that need to be far better understood in order to improve their representation in climate models. Therefore, the research presented here addresses the challenge of characterizing simultaneously aerosols and clouds in a single APS observation. Access to polarization can, at least in principle, be used to separate clouds and aerosols using the cloud-bow directions that will often be sampled by APS. In practice, however, we need to assess the extent of 3D polarized RT unfolding inside the APS pixel that cannot be estimated using a linear mixture of 1D vector RT (vRT) computations assuming either aerosol or cloud is present. Differences between the 1D vRT-based prediction and simulated APS data derived from a high-fidelity 3D vRT model is what we call "irreducible" 3D RT effects. To this end, we have used the vMYSTIC Monte Carlo 3D vRT model. Based on computations for a typical scene with a 3D cumulus cloud field embedded in a horizontally uniform aerosol, we find that the irreducible 3D vRT effects are in the APS's signal--not its noise--especially if the aerosol burden is significant. The cloud-bow region, which is key to any practical cloud-aerosol unmixing algorithm, is particularly vulnerable. Moreover, the adopted 1D vRT-based forward model is assumed to be very well informed about the actual aerosol/cloud properties, meaning that the predicted irreducible 3D vRT effects are a best-case scenario. In reality, the problem will be far more severe. We will nonetheless describe a promising path toward a mitigation scheme. We will also assess the impact of the 3D vRT damage on the joint aerosol-cloud property retrieval.

A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

PubMed

Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

2015-12-01

In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

NASA Astrophysics Data System (ADS)

Deptuch, G.

2005-05-01

The first autoradiographic results of the tritium ( 3H) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (<30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the 1×10 6 pixel, thinned MIMOSA V chip. The low noise performance and thin (˜160 nm) entrance window provide the sensitivity of the device to energies as low as ˜4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained.

Status and Construction of the Belle II DEPFET pixel system

NASA Astrophysics Data System (ADS)

Lütticke, Florian

2014-06-01

DEpleted P-channel Field Effect Transistor (DEPFET) active pixel detectors combine detection with a first amplification stage in a fully depleted detector, resulting in an superb signal-to-noise ratio even for thin sensors. Two layers of thin (75 micron) silicon DEPFET pixels will be used as the innermost vertex system, very close to the beam pipe in the Belle II detector at the SuperKEKB facility. The status of the 8 million DEPFET pixels detector, latest developments and current system tests will be discussed.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

OXIDATIVE STRESS AND TREG DEPLETION IN LUPUS PATIENTS WITH ANTI-PHOSPHOLIPID SYNDROME

PubMed Central

Lai, Zhi-wei; Marchena-Mendez, Ivan; Perl, Andras

2015-01-01

Anti-phospholipid antibodies (APLA) represent a diagnostic criterion of systemic lupus erythematosus (SLE) and cause morbidity, termed anti-phospholipid syndrome (APS). Activation of the mechanistic target of rapamycin (mTOR) has been recently associated with APS. mTOR is a sensor of oxidative stress. Therefore, we examined mitochondrial mass, superoxide production, mTOR and FoxP3 expression in 72 SLE patients, twelve of whom also had APS, and 54 healthy controls by flow cytometry. Mitochondrial mass was increased in CD4−CD8− double-negative (DN) T cells of SLE patients with APS (2.7-fold) in comparison to those without APS (1.7-fold; p=0.014). Superoxide production was increased in all lymphocyte subsets of APS patients. FoxP3+ cells were depleted within CD4+CD25+ Tregs in patients with APS (28.4%) relative to those without APS (46.3%, p=0.008). mTOR activity was similar between SLE patients with and without APS. Thus, oxidative stress and Treg depletion rather than mTOR activation underlie APS in patients with SLE. PMID:25862984

A FPGA-based Cluster Finder for CMOS Monolithic Active Pixel Sensors of the MIMOSA-26 Family

NASA Astrophysics Data System (ADS)

Li, Qiyan; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Stroth, J.; Tischler, T.

2014-06-01

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Linnik, B.; Bus, T.; Deveaux, M.; Doering, D.; Kudejova, P.; Wagner, F. M.; Yazgili, A.; Stroth, J.

2017-05-01

CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC and the tracker of ATLAS. In those applications, the sensors are exposed to sizeable radiation doses. While the tolerance of MAPS to ionizing radiation and fast hadrons is well known, the damage caused by low energy neutrons was not studied so far. Those slow neutrons may initiate nuclear fission of 10B dopants found in the B-doped silicon active medium of MAPS. This effect was expected to create an unknown amount of radiation damage beyond the predictions of the NIEL (Non Ionizing Energy Loss) model for pure silicon. We estimate the impact of this effect by calculating the additional NIEL created by this fission. Moreover, we show first measured data for CMOS sensors which were irradiated with cold neutrons. The empirical results contradict the prediction of the updated NIEL model both, qualitatively and quantitatively: the sensors irradiated with slow neutrons show an unexpected and strong acceptor removal, which is not observed in sensors irradiated with MeV neutrons.

Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out

NASA Astrophysics Data System (ADS)

Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.

2010-12-01

Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

An ultra-low power self-timed column-level ADC for a CMOS pixel sensor based vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Wang, M.

2014-11-01

The International Large Detector (ILD) is a detector concept for the future linear collider experiment. The vertex detector is the key tool to achieve high precision measurements for flavor tagging, which puts stringent requirements on the CMOS pixel sensors. Due to the cooling systems which deteriorate the material budget and increase the multiple scattering, it is important to reduce the power consumption. This paper presents an ultra-low power self-timed column-level ADC for the CMOS pixel sensors, aiming to equip the outer layers of the vertex detector. The ADC was designed to operate in two modes (active and idle) adapted to the low hit density in the outer layers. The architecture employs an enhanced sample-and-hold circuit and a self-timed technique. The total power consumption with a 3-V supply is 225μW during idle mode, which is the most frequent situation. This value rises to 425μW in the case of the active mode. It occupies an area of 35 × 590μm2.

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

PubMed Central

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshinari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-01-01

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency. PMID:27873817

Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Fiergolski, A.; Hynds, D.; Kulis, S.; Peric, I.

2017-09-01

The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial 180 nm HV-CMOS process and contains a matrix of 128×128 square pixels with 25μm pitch. First prototypes have been produced with a standard resistivity of ~20 Ωcm for the substrate and tested in standalone mode. The results show a rise time of ~20 ns, charge gain of 190 mV/ke- and ~40 e- RMS noise for a power consumption of 4.8μW/pixel. The main design aspects, as well as standalone measurement results, are presented.

Dense range map reconstruction from a versatile robotic sensor system with an active trinocular vision and a passive binocular vision.

PubMed

Kim, Min Young; Lee, Hyunkee; Cho, Hyungsuck

2008-04-10

One major research issue associated with 3D perception by robotic systems is the creation of efficient sensor systems that can generate dense range maps reliably. A visual sensor system for robotic applications is developed that is inherently equipped with two types of sensor, an active trinocular vision and a passive stereo vision. Unlike in conventional active vision systems that use a large number of images with variations of projected patterns for dense range map acquisition or from conventional passive vision systems that work well on specific environments with sufficient feature information, a cooperative bidirectional sensor fusion method for this visual sensor system enables us to acquire a reliable dense range map using active and passive information simultaneously. The fusion algorithms are composed of two parts, one in which the passive stereo vision helps active vision and the other in which the active trinocular vision helps the passive one. The first part matches the laser patterns in stereo laser images with the help of intensity images; the second part utilizes an information fusion technique using the dynamic programming method in which image regions between laser patterns are matched pixel-by-pixel with help of the fusion results obtained in the first part. To determine how the proposed sensor system and fusion algorithms can work in real applications, the sensor system is implemented on a robotic system, and the proposed algorithms are applied. A series of experimental tests is performed for a variety of configurations of robot and environments. The performance of the sensor system is discussed in detail.

A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance

NASA Astrophysics Data System (ADS)

Snoeys, W.; Aglieri Rinella, G.; Hillemanns, H.; Kugathasan, T.; Mager, M.; Musa, L.; Riedler, P.; Reidt, F.; Van Hoorne, J.; Fenigstein, A.; Leitner, T.

2017-11-01

For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180 nm CMOS imaging sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 1013 1 MeVneq /cm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55 Fe source at a reverse substrate bias of -6 V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115 mV, 110 mV and 90 mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27 . 8 + / - 5 ns, 23 . 2 + / - 4 . 2 ns, and 22 . 2 + / - 3 . 7 ns rms, respectively. In a different setup, the single pixel signal from a 90 Sr source only degrades by less than 20% for the modified process after a 1015 1 MeVneq /cm2 irradiation, while the signal rise time only degrades by about 16 + / - 2 ns to 19 + / - 2 . 8 ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

A Sensitive Dynamic and Active Pixel Vision Sensor for Color or Neural Imaging Applications.

PubMed

Moeys, Diederik Paul; Corradi, Federico; Li, Chenghan; Bamford, Simeon A; Longinotti, Luca; Voigt, Fabian F; Berry, Stewart; Taverni, Gemma; Helmchen, Fritjof; Delbruck, Tobi

2018-02-01

Applications requiring detection of small visual contrast require high sensitivity. Event cameras can provide higher dynamic range (DR) and reduce data rate and latency, but most existing event cameras have limited sensitivity. This paper presents the results of a 180-nm Towerjazz CIS process vision sensor called SDAVIS192. It outputs temporal contrast dynamic vision sensor (DVS) events and conventional active pixel sensor frames. The SDAVIS192 improves on previous DAVIS sensors with higher sensitivity for temporal contrast. The temporal contrast thresholds can be set down to 1% for negative changes in logarithmic intensity (OFF events) and down to 3.5% for positive changes (ON events). The achievement is possible through the adoption of an in-pixel preamplification stage. This preamplifier reduces the effective intrascene DR of the sensor (70 dB for OFF and 50 dB for ON), but an automated operating region control allows up to at least 110-dB DR for OFF events. A second contribution of this paper is the development of characterization methodology for measuring DVS event detection thresholds by incorporating a measure of signal-to-noise ratio (SNR). At average SNR of 30 dB, the DVS temporal contrast threshold fixed pattern noise is measured to be 0.3%-0.8% temporal contrast. Results comparing monochrome and RGBW color filter array DVS events are presented. The higher sensitivity of SDAVIS192 make this sensor potentially useful for calcium imaging, as shown in a recording from cultured neurons expressing calcium sensitive green fluorescent protein GCaMP6f.

The Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

EUNIS-07: First Look

NASA Technical Reports Server (NTRS)

Rabin, Douglas M.; Thomas, Roger J.; Brosius, Jeffrey W.

2008-01-01

The Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket instrument is a two-channel imaging spectrograph that observes the solar corona with high spectral resolution and a rapid cadence made possible by unprecedented sensitivity. EUNIS flew for the first time on 2006 April 12 (EUNIS-06), returning over 140 science exposures at a cadence of 2.1 s; each exposure comprises six 1K x 1K active pixel sensor (APS) images, three for each wavelength channel (170-205 $\\AA$ and 300-370 $\\AA$). Analysis of EUNIS-06 data has so far shed new light on the nature of coronal bright points, cool transients, and coronal loop arcades and has enabled calibration updates for TRACE and SOHO's CDS and EIT. EUNIS flew successfully again on 2007 November 6 (EUNIS-07). Because the APS's were operated in video rather than snapshot mode, a faster cadence of 1.3 s was possible (97% duty cycle), resulting in 276 science exposures. We present an overview of the EUNIS-07 spectra and describe the coordinated observing program executed by the Hinode Extreme ultraviolet Imaging Spectrograph (EIS) that will, in conjunction with the absolute radiometric calibration of EUNIS-07, result in the first on-orbit radiometric calibration of EIS. EUNIS data are freely available to the solar physics community. EUNIS is supported by the NASA Heliophysics Division through its Low Cost Access to Space Program in Solar and Heliospheric Physics.

I-ImaS: intelligent imaging sensors

NASA Astrophysics Data System (ADS)

Griffiths, J.; Royle, G.; Esbrand, C.; Hall, G.; Turchetta, R.; Speller, R.

2010-08-01

Conventional x-radiography uniformly irradiates the relevant region of the patient. Across that region, however, there is likely to be significant variation in both the thickness and pathological composition of the tissues present, which means that the x-ray exposure conditions selected, and consequently the image quality achieved, are a compromise. The I-ImaS concept eliminates this compromise by intelligently scanning the patient to identify the important diagnostic features, which are then used to adaptively control the x-ray exposure conditions at each point in the patient. In this way optimal image quality is achieved throughout the region of interest whilst maintaining or reducing the dose. An I-ImaS system has been built under an EU Framework 6 project and has undergone pre-clinical testing. The system is based upon two rows of sensors controlled via an FPGA based DAQ board. Each row consists of a 160 mm × 1 mm linear array of ten scintillator coated 3T CMOS APS devices with 32 μm pixels and a readable array of 520 × 40 pixels. The first sensor row scans the patient using a fraction of the total radiation dose to produce a preview image, which is then interrogated to identify the optimal exposure conditions at each point in the image. A signal is then sent to control a beam filter mechanism to appropriately moderate x-ray beam intensity at the patient as the second row of sensors follows behind. Tests performed on breast tissue sections found that the contrast-to-noise ratio in over 70% of the images was increased by an average of 15% at an average dose reduction of 9%. The same technology is currently also being applied to baggage scanning for airport security.

Readout of the upgraded ALICE-ITS

NASA Astrophysics Data System (ADS)

Szczepankiewicz, A.; ALICE Collaboration

2016-07-01

The ALICE experiment will undergo a major upgrade during the second long shutdown of the CERN LHC. As part of this program, the present Inner Tracking System (ITS), which employs different layers of hybrid pixels, silicon drift and strip detectors, will be replaced by a completely new tracker composed of seven layers of monolithic active pixel sensors. The upgraded ITS will have more than twelve billion pixels in total, producing 300 Gbit/s of data when tracking 50 kHz Pb-Pb events. Two families of pixel chips realized with the TowerJazz CMOS imaging process have been developed as candidate sensors: the ALPIDE, which uses a proprietary readout and sparsification mechanism and the MISTRAL-O, based on a proven rolling shutter architecture. Both chips can operate in continuous mode, with the ALPIDE also supporting triggered operations. As the communication IP blocks are shared among the two chip families, it has been possible to develop a common Readout Electronics. All the sensor components (analog stages, state machines, buffers, FIFOs, etc.) have been modelled in a system level simulation, which has been extensively used to optimize both the sensor and the whole readout chain design in an iterative process. This contribution covers the progress of the R&D efforts and the overall expected performance of the ALICE-ITS readout system.

Electrophoretically mediated microanalysis of a nicotinamide adenine dinucleotide-dependent enzyme and its facile multiplexing using an active pixel sensor UV detector.

PubMed

Urban, Pawel L; Goodall, David M; Bergström, Edmund T; Bruce, Neil C

2007-08-31

An electrophoretically mediated microanalysis (EMMA) method has been developed for yeast alcohol dehydrogenase and quantification of reactant and product cofactors, NAD and NADH. The enzyme substrate ethanol (1% (v/v)) was added to the buffer (50 mM borate, pH 8.8). Results are presented for parallel capillary electrophoresis with a novel miniature UV area detector, with an active pixel sensor imaging an array of two or six parallel capillaries connected via a manifold to a single output capillary in a commercial CE instrument, allowing conversions with five different yeast alcohol dehydrogenase concentrations to be quantified in a single experiment.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

PubMed

Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Liang, Albert K; Zhao, Qihua

2017-07-01

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000 e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20 × 20 cm 2 , 150 μm pitch array operated at 30 fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including sampling mode, of the designs. The total electronic additive noise included noise contributions from each circuit component. The total noise results were found to exhibit a strong dependence on circuit design and operating conditions, with TFT flicker noise generally found to be the dominant noise contributor. For the single-stage designs, significantly increasing the size of the source-follower TFT substantially reduced flicker noise - with the lowest total noise found to be ~574 e [rms]. For the two-stage designs, in addition to tuning TFT sizes and introducing a low-pass filter, replacing a p-type TFT with a resistor (under the assumption in the study that resistors make no flicker noise contribution) resulted in significant noise reduction - with the lowest total noise found to be ~336 e [rms]. A methodology based on circuit simulations which facilitates comprehensive explorations of signal and noise characteristics has been developed and applied to the case of poly-Si AP arrays. The encouraging results suggest that the electronic additive noise of such devices can be substantially reduced through judicious circuit design, signal amplification, and multiple sampling. This methodology could be extended to explore the noise performance of arrays employing other pixel circuitry such as that for photon counting as well as other semiconductor materials such as a-Si:H and a-IGZO. © 2017 American Association of Physicists in Medicine.

Pixel decomposition for tracking in low resolution videos

NASA Astrophysics Data System (ADS)

Govinda, Vivekanand; Ralph, Jason F.; Spencer, Joseph W.; Goulermas, John Y.; Yang, Lihua; Abbas, Alaa M.

2008-04-01

This paper describes a novel set of algorithms that allows indoor activity to be monitored using data from very low resolution imagers and other non-intrusive sensors. The objects are not resolved but activity may still be determined. This allows the use of such technology in sensitive environments where privacy must be maintained. Spectral un-mixing algorithms from remote sensing were adapted for this environment. These algorithms allow the fractional contributions from different colours within each pixel to be estimated and this is used to assist in the detection and monitoring of small objects or sub-pixel motion.

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE PAGES

An, Mangmang; Chen, Chufeng; Gao, Chaosong; ...

2015-12-12

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Mangmang; Chen, Chufeng; Gao, Chaosong

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Active/passive scanning. [airborne multispectral laser scanners for agricultural and water resources applications

NASA Technical Reports Server (NTRS)

Woodfill, J. R.; Thomson, F. J.

1979-01-01

The paper deals with the design, construction, and applications of an active/passive multispectral scanner combining lasers with conventional passive remote sensors. An application investigation was first undertaken to identify remote sensing applications where active/passive scanners (APS) would provide improvement over current means. Calibration techniques and instrument sensitivity are evaluated to provide predictions of the APS's capability to meet user needs. A preliminary instrument design was developed from the initial conceptual scheme. A design review settled the issues of worthwhile applications, calibration approach, hardware design, and laser complement. Next, a detailed mechanical design was drafted and construction of the APS commenced. The completed APS was tested and calibrated in the laboratory, then installed in a C-47 aircraft and ground tested. Several flight tests completed the test program.

Time-Resolved Measurements in Optoelectronic Microbioanalysis

NASA Technical Reports Server (NTRS)

Bearman, Gregory; Kossakovski, Dmitri

2003-01-01

A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

A Chip and Pixel Qualification Methodology on Imaging Sensors

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Petkov, Mihail; Nguyen, Duc N.; Novak, Frank

2004-01-01

This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

Complement-mediated opsonization of invasive group A Streptococcus pyogenes strain AP53 is regulated by the bacterial two-component cluster of virulence responder/sensor (CovRS) system.

PubMed

Agrahari, Garima; Liang, Zhong; Mayfield, Jeffrey A; Balsara, Rashna D; Ploplis, Victoria A; Castellino, Francis J

2013-09-20

Group A Streptococcus pyogenes (GAS) strain AP53 is a primary isolate from a patient with necrotizing fasciitis. These AP53 cells contain an inactivating mutation in the sensor component of the cluster of virulence (cov) responder (R)/sensor (S) two-component gene regulatory system (covRS), which enhances the virulence of the primary strain, AP53/covR(+)S(-). However, specific mechanisms by which the covRS system regulates the survival of GAS in humans are incomplete. Here, we show a key role for covRS in the regulation of opsonophagocytosis of AP53 by human neutrophils. AP53/covR(+)S(-) cells displayed potent binding of host complement inhibitors of C3 convertase, viz. Factor H (FH) and C4-binding protein (C4BP), which concomitantly led to minimal C3b deposition on AP53 cells, further showing that these plasma protein inhibitors are active on GAS cells. This resulted in weak killing of the bacteria by human neutrophils and a corresponding high death rate of mice after injection of these cells. After targeted allelic alteration of covS(-) to wild-type covS (covS(+)), a dramatic loss of FH and C4BP binding to the AP53/covR(+)S(+) cells was observed. This resulted in elevated C3b deposition on AP53/covR(+)S(+) cells, a high level of opsonophagocytosis by human neutrophils, and a very low death rate of mice infected with AP53/covR(+)S(+). We show that covRS is a critical transcriptional regulator of genes directing AP53 killing by neutrophils and regulates the levels of the receptors for FH and C4BP, which we identify as the products of the fba and enn genes, respectively.

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

Limb Viewing Hyper Spectral Imager (LiVHySI) for airglow measurements onboard YOUTHSAT-1

NASA Astrophysics Data System (ADS)

Bisht, R. S.; Hait, A. K.; Babu, P. N.; Sarkar, S. S.; Benerji, A.; Biswas, A.; Saji, A. K.; Samudraiah, D. R. M.; Kirankumar, A. S.; Pant, T. K.; Parimalarangan, T.

2014-08-01

The Limb Viewing Hyper Spectral Imager (LiVHySI) is one of the Indian payloads onboard YOUTHSAT (inclination 98.73°, apogee 817 km) launched in April, 2011. The Hyper-spectral imager has been operated in Earth’s limb viewing mode to measure airglow emissions in the spectral range 550-900 nm, from terrestrial upper atmosphere (i.e. 80 km altitude and above) with a line-of-sight range of about 3200 km. The altitude coverage is about 500 km with command selectable lowest altitude. This imaging spectrometer employs a Linearly Variable Filter (LVF) to generate the spectrum and an Active Pixel Sensor (APS) area array of 256 × 512 pixels, placed in close proximity of the LVF as detector. The spectral sampling is done at 1.06 nm interval. The optics used is an eight element f/2 telecentric lens system with 80 mm effective focal length. The detector is aligned with respect to the LVF such that its 512 pixel dimension covers the spectral range. The radiometric sensitivity of the imager is about 20 Rayleigh at noise floor through the signal integration for 10 s at wavelength 630 nm. The imager is being operated during the eclipsed portion of satellite orbits. The integration in the time/spatial domain could be chosen depending upon the season, solar and geomagnetic activity and/or specific target area. This paper primarily aims at describing LiVHySI, its in-orbit operations, quality, potential of the data and its first observations. The images reveal the thermospheric airglow at 630 nm to be the most prominent. These first LiVHySI observations carried out on the night of 21st April, 2011 are presented here, while the variability exhibited by the thermospheric nightglow at O(1D) 630 nm has been described in detail.

A 100 Mfps image sensor for biological applications

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Shimonomura, Kazuhiro; Nguyen, Anh Quang; Takehara, Kosei; Kamakura, Yoshinari; Goetschalckx, Paul; Haspeslagh, Luc; De Moor, Piet; Dao, Vu Truong Son; Nguyen, Hoang Dung; Hayashi, Naoki; Mitsui, Yo; Inumaru, Hideo

2018-02-01

Two ultrahigh-speed CCD image sensors with different characteristics were fabricated for applications to advanced scientific measurement apparatuses. The sensors are BSI MCG (Backside-illuminated Multi-Collection-Gate) image sensors with multiple collection gates around the center of the front side of each pixel, placed like petals of a flower. One has five collection gates and one drain gate at the center, which can capture consecutive five frames at 100 Mfps with the pixel count of about 600 kpixels (512 x 576 x 2 pixels). In-pixel signal accumulation is possible for repetitive image capture of reproducible events. The target application is FLIM. The other is equipped with four collection gates each connected to an in-situ CCD memory with 305 elements, which enables capture of 1,220 (4 x 305) consecutive images at 50 Mfps. The CCD memory is folded and looped with the first element connected to the last element, which also makes possible the in-pixel signal accumulation. The sensor is a small test sensor with 32 x 32 pixels. The target applications are imaging TOF MS, pulse neutron tomography and dynamic PSP. The paper also briefly explains an expression of the temporal resolution of silicon image sensors theoretically derived by the authors in 2017. It is shown that the image sensor designed based on the theoretical analysis achieves imaging of consecutive frames at the frame interval of 50 ps.

Log polar image sensor in CMOS technology

NASA Astrophysics Data System (ADS)

Scheffer, Danny; Dierickx, Bart; Pardo, Fernando; Vlummens, Jan; Meynants, Guy; Hermans, Lou

1996-08-01

We report on the design, design issues, fabrication and performance of a log-polar CMOS image sensor. The sensor is developed for the use in a videophone system for deaf and hearing impaired people, who are not capable of communicating through a 'normal' telephone. The system allows 15 detailed images per second to be transmitted over existing telephone lines. This framerate is sufficient for conversations by means of sign language or lip reading. The pixel array of the sensor consists of 76 concentric circles with (up to) 128 pixels per circle, in total 8013 pixels. The interior pixels have a pitch of 14 micrometers, up to 250 micrometers at the border. The 8013-pixels image is mapped (log-polar transformation) in a X-Y addressable 76 by 128 array.

Is flat fielding safe for precision CCD astronomy?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Is flat fielding safe for precision CCD astronomy?

DOE PAGES

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

2017-07-06

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

Hemispherical Field-of-View Above-Water Surface Imager for Submarines

NASA Technical Reports Server (NTRS)

Hemmati, Hamid; Kovalik, Joseph M.; Farr, William H.; Dannecker, John D.

2012-01-01

A document discusses solutions to the problem of submarines having to rise above water to detect airplanes in the general vicinity. Two solutions are provided, in which a sensor is located just under the water surface, and at a few to tens of meter depth under the water surface. The first option is a Fish Eye Lens (FEL) digital-camera combination, situated just under the water surface that will have near-full- hemisphere (360 azimuth and 90 elevation) field of view for detecting objects on the water surface. This sensor can provide a three-dimensional picture of the airspace both in the marine and in the land environment. The FEL is coupled to a camera and can continuously look at the entire sky above it. The camera can have an Active Pixel Sensor (APS) focal plane array that allows logic circuitry to be built directly in the sensor. The logic circuitry allows data processing to occur on the sensor head without the need for any other external electronics. In the second option, a single-photon sensitive (photon counting) detector-array is used at depth, without the need for any optics in front of it, since at this location, optical signals are scattered and arrive at a wide (tens of degrees) range of angles. Beam scattering through clouds and seawater effectively negates optical imaging at depths below a few meters under cloudy or turbulent conditions. Under those conditions, maximum collection efficiency can be achieved by using a non-imaging photon-counting detector behind narrowband filters. In either case, signals from these sensors may be fused and correlated or decorrelated with other sensor data to get an accurate picture of the object(s) above the submarine. These devices can complement traditional submarine periscopes that have a limited field of view in the elevation direction. Also, these techniques circumvent the need for exposing the entire submarine or its periscopes to the outside environment.

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

PubMed

Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

2015-06-03

Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

Design and fabrication of vertically-integrated CMOS image sensors.

PubMed

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

PubMed Central

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

New results on diamond pixel sensors using ATLAS frontend electronics

NASA Astrophysics Data System (ADS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

Small pixel cross-talk MTF and its impact on MWIR sensor performance

NASA Astrophysics Data System (ADS)

Goss, Tristan M.; Willers, Cornelius J.

2017-05-01

As pixel sizes reduce in the development of modern High Definition (HD) Mid Wave Infrared (MWIR) detectors the interpixel cross-talk becomes increasingly difficult to regulate. The diffusion lengths required to achieve the quantum efficiency and sensitivity of MWIR detectors are typically longer than the pixel pitch dimension, and the probability of inter-pixel cross-talk increases as the pixel pitch/diffusion length fraction decreases. Inter-pixel cross-talk is most conveniently quantified by the focal plane array sampling Modulation Transfer Function (MTF). Cross-talk MTF will reduce the ideal sinc square pixel MTF that is commonly used when modelling sensor performance. However, cross-talk MTF data is not always readily available from detector suppliers, and since the origins of inter-pixel cross-talk are uniquely device and manufacturing process specific, no generic MTF models appear to satisfy the needs of the sensor designers and analysts. In this paper cross-talk MTF data has been collected from recent publications and the development for a generic cross-talk MTF model to fit this data is investigated. The resulting cross-talk MTF model is then included in a MWIR sensor model and the impact on sensor performance is evaluated in terms of the National Imagery Interoperability Rating Scale's (NIIRS) General Image Quality Equation (GIQE) metric for a range of fnumber/ detector pitch Fλ/d configurations and operating environments. By applying non-linear boost transfer functions in the signal processing chain, the contrast losses due to cross-talk may be compensated for. Boost transfer functions, however, also reduce the signal to noise ratio of the sensor. In this paper boost function limits are investigated and included in the sensor performance assessments.

Lensfree on-chip microscopy over a wide field-of-view using pixel super-resolution

PubMed Central

Bishara, Waheb; Su, Ting-Wei; Coskun, Ahmet F.; Ozcan, Aydogan

2010-01-01

We demonstrate lensfree holographic microscopy on a chip to achieve ~0.6 µm spatial resolution corresponding to a numerical aperture of ~0.5 over a large field-of-view of ~24 mm2. By using partially coherent illumination from a large aperture (~50 µm), we acquire lower resolution lensfree in-line holograms of the objects with unit fringe magnification. For each lensfree hologram, the pixel size at the sensor chip limits the spatial resolution of the reconstructed image. To circumvent this limitation, we implement a sub-pixel shifting based super-resolution algorithm to effectively recover much higher resolution digital holograms of the objects, permitting sub-micron spatial resolution to be achieved across the entire sensor chip active area, which is also equivalent to the imaging field-of-view (24 mm2) due to unit magnification. We demonstrate the success of this pixel super-resolution approach by imaging patterned transparent substrates, blood smear samples, as well as Caenoharbditis Elegans. PMID:20588977

Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response

NASA Astrophysics Data System (ADS)

Li, Zhuo; Seo, Min-Woong; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2016-04-01

This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.

High resistivity CMOS pixel sensors and their application to the STAR PXL detector

NASA Astrophysics Data System (ADS)

Dorokhov, A.; Bertolone, G.; Baudot, J.; Colledani, C.; Claus, G.; Degerli, Y.; de Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Gélin, M.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Winter, M.

2011-09-01

CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope.The paper gives an overview of the ULTIMATE sensor specifications and of the adaptation of its forerunner, MIMOSA-26, to the PXL specifications.One of the main changes between MIMOSA-26 and ULTIMATE is the use of a high resistivity epitaxial layer. Recent performance assessments obtained with MIMOSA-26 sensors manufactured on such an epitaxial layer are presented, as well as results of beam tests obtained with a prototype probing improved versions of the MIMOSA-26 pixel design. They show drastic improvements of the pixel signal-to-noise ratio and of the sensor radiation tolerance with respect to the performances achieved with a standard, i.e. low resistivity, layer.

Active pixel sensor array with electronic shuttering

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor)

2002-01-01

An active pixel cell includes electronic shuttering capability. The cell can be shuttered to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The charge is sampled from a floating node. Since the charge is stored, the node can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.

System modeling of the Thirty Meter Telescope alignment and phasing system

NASA Astrophysics Data System (ADS)

Dekens, Frank G.; Seo, Byoung-Joon; Troy, Mitchell

2014-08-01

We have developed a system model using the System Modeling Language (SysML) for the Alignment and Phasing System (APS) on the Thirty Meter Telescope (TMT). APS is a Shack-Hartmann wave-front sensor that will be used to measure the alignment and phasing of the primary mirror segments, and the alignment of the secondary and tertiary mirrors. The APS system model contains the ow-down of the Level 1 TMT requirements to APS (Level 2) requirements, and from there to the APS sub-systems (Level 3) requirements. The model also contains the operating modes and scenarios for various activities, such as maintenance alignment, post-segment exchange alignment, and calibration activities. The requirements ow-down is captured in SysML requirements diagrams, and we describe the process of maintaining the DOORS database as the single-source-of-truth for requirements, while using the SysML model to capture the logic and notes associated with the ow-down. We also use the system model to capture any needed communications from APS to other TMT systems, and between the APS sub-systems. The operations are modeled using SysML activity diagrams, and will be used to specify the APS interface documents. The modeling tool can simulate the top level activities to produce sequence diagrams, which contain all the communications between the system and subsystem needed for that activity. By adding time estimates for the lowest level APS activities, a robust estimate for the total time on-sky that APS requires to align and phase the telescope can be obtained. This estimate will be used to verify that the time APS requires on-sky meets the Level 1 TMT requirements.

Scintillation properties of Pr-activated LuAlO 3

NASA Astrophysics Data System (ADS)

Drozdowski, Winicjusz; Wojtowicz, Andrzej J.; Wiśniewski, Dariusz; Łukasiewicz, Tadeusz; Kisielewski, Jarosław

2006-01-01

Praseodymium activated LuAlO 3 (LuAP) crystals have been grown using the Czochralski method at ITME, Warsaw. In this communication the measurements of radioluminescence (RL), low temperature thermoluminescence (TL), room temperature afterglow (AG), scintillation light yields (LY), and scintillation time profiles (STP), performed on polished 2 × 2 × 10 mm pixels with three Pr concentrations (0.003, 0.04, and 0.08 at.%), are reported. Two sets of samples are compared: (i) "as grown", and (ii) annealed in H 2 atmosphere.

MTF evaluation of white pixel sensors

NASA Astrophysics Data System (ADS)

Lindner, Albrecht; Atanassov, Kalin; Luo, Jiafu; Goma, Sergio

2015-01-01

We present a methodology to compare image sensors with traditional Bayer RGB layouts to sensors with alternative layouts containing white pixels. We focused on the sensors' resolving powers, which we measured in the form of a modulation transfer function for variations in both luma and chroma channels. We present the design of the test chart, the acquisition of images, the image analysis, and an interpretation of results. We demonstrate the approach at the example of two sensors that only differ in their color filter arrays. We confirmed that the sensor with white pixels and the corresponding demosaicing result in a higher resolving power in the luma channel, but a lower resolving power in the chroma channels when compared to the traditional Bayer sensor.

Pixel super resolution using wavelength scanning

DTIC Science & Technology

2016-04-08

the light source is adjusted to ~20 μW. The image sensor chip is a color CMOS sensor chip with a pixel size of 1.12 μm manufactured for cellphone...pitch (that is, ~ 1 μm in Figure 3a, using a CMOS sensor that has a 1.12-μm pixel pitch). For the same configuration depicted in Figure 3, utilizing...section). The a Lens-free raw holograms captured by 1.12 μm CMOS image sensor Field of view ≈ 20.5 mm2 Angle change directions for synthetic aperture

A Proxy Design to Leverage the Interconnection of CoAP Wireless Sensor Networks with Web Applications

PubMed Central

Ludovici, Alessandro; Calveras, Anna

2015-01-01

In this paper, we present the design of a Constrained Application Protocol (CoAP) proxy able to interconnect Web applications based on Hypertext Transfer Protocol (HTTP) and WebSocket with CoAP based Wireless Sensor Networks. Sensor networks are commonly used to monitor and control physical objects or environments. Smart Cities represent applications of such a nature. Wireless Sensor Networks gather data from their surroundings and send them to a remote application. This data flow may be short or long lived. The traditional HTTP long-polling used by Web applications may not be adequate in long-term communications. To overcome this problem, we include the WebSocket protocol in the design of the CoAP proxy. We evaluate the performance of the CoAP proxy in terms of latency and memory consumption. The tests consider long and short-lived communications. In both cases, we evaluate the performance obtained by the CoAP proxy according to the use of WebSocket and HTTP long-polling. PMID:25585107

Median filters as a tool to determine dark noise thresholds in high resolution smartphone image sensors for scientific imaging

NASA Astrophysics Data System (ADS)

Igoe, Damien P.; Parisi, Alfio V.; Amar, Abdurazaq; Rummenie, Katherine J.

2018-01-01

An evaluation of the use of median filters in the reduction of dark noise in smartphone high resolution image sensors is presented. The Sony Xperia Z1 employed has a maximum image sensor resolution of 20.7 Mpixels, with each pixel having a side length of just over 1 μm. Due to the large number of photosites, this provides an image sensor with very high sensitivity but also makes them prone to noise effects such as hot-pixels. Similar to earlier research with older models of smartphone, no appreciable temperature effects were observed in the overall average pixel values for images taken in ambient temperatures between 5 °C and 25 °C. In this research, hot-pixels are defined as pixels with intensities above a specific threshold. The threshold is determined using the distribution of pixel values of a set of images with uniform statistical properties associated with the application of median-filters of increasing size. An image with uniform statistics was employed as a training set from 124 dark images, and the threshold was determined to be 9 digital numbers (DN). The threshold remained constant for multiple resolutions and did not appreciably change even after a year of extensive field use and exposure to solar ultraviolet radiation. Although the temperature effects' uniformity masked an increase in hot-pixel occurrences, the total number of occurrences represented less than 0.1% of the total image. Hot-pixels were removed by applying a median filter, with an optimum filter size of 7 × 7; similar trends were observed for four additional smartphone image sensors used for validation. Hot-pixels were also reduced by decreasing image resolution. The method outlined in this research provides a methodology to characterise the dark noise behavior of high resolution image sensors for use in scientific investigations, especially as pixel sizes decrease.

Current efforts on developing an HWIL synthetic environment for LADAR sensor testing at AMRDEC

NASA Astrophysics Data System (ADS)

Kim, Hajin J.; Cornell, Michael C.; Naumann, Charles B.

2005-05-01

Efforts in developing a synthetic environment for testing LADAR sensors in a hardware-in-the-loop simulation are continuing at the Aviation and Missile Research, Engineering, and Development Center (AMRDEC) of the U.S. Army Research, Engineering and Development Command (RDECOM). Current activities have concentrated on developing the optical projection hardware portion of the synthetic environment. These activities range from system level design down to component level testing. Of particular interest have been schemes for generating the optical signals representing the individual pixels of the projection. Several approaches have been investigated and tested with emphasis on operating wavelength, intensity dynamic range and uniformity, and flexibility in pixel waveform generation. This paper will discuss some of the results from these current efforts at RDECOM's Advanced Simulation Center (ASC).

Image Accumulation in Pixel Detector Gated by Late External Trigger Signal and its Application in Imaging Activation Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jakubek, J.; Cejnarova, A.; Platkevic, M.

Single quantum counting pixel detectors of Medipix type are starting to be used in various radiographic applications. Compared to standard devices for digital imaging (such as CCDs or CMOS sensors) they present significant advantages: direct conversion of radiation to electric signal, energy sensitivity, noiseless image integration, unlimited dynamic range, absolute linearity. In this article we describe usage of the pixel device TimePix for image accumulation gated by late trigger signal. Demonstration of the technique is given on imaging coincidence instrumental neutron activation analysis (Imaging CINAA). This method allows one to determine concentration and distribution of certain preselected element in anmore » inspected sample.« less

The analysis and rationale behind the upgrading of existing standard definition thermal imagers to high definition

NASA Astrophysics Data System (ADS)

Goss, Tristan M.

2016-05-01

With 640x512 pixel format IR detector arrays having been on the market for the past decade, Standard Definition (SD) thermal imaging sensors have been developed and deployed across the world. Now with 1280x1024 pixel format IR detector arrays becoming readily available designers of thermal imager systems face new challenges as pixel sizes reduce and the demand and applications for High Definition (HD) thermal imaging sensors increases. In many instances the upgrading of existing under-sampled SD thermal imaging sensors into more optimally sampled or oversampled HD thermal imaging sensors provides a more cost effective and reduced time to market option than to design and develop a completely new sensor. This paper presents the analysis and rationale behind the selection of the best suited HD pixel format MWIR detector for the upgrade of an existing SD thermal imaging sensor to a higher performing HD thermal imaging sensor. Several commercially available and "soon to be" commercially available HD small pixel IR detector options are included as part of the analysis and are considered for this upgrade. The impact the proposed detectors have on the sensor's overall sensitivity, noise and resolution is analyzed, and the improved range performance is predicted. Furthermore with reduced dark currents due to the smaller pixel sizes, the candidate HD MWIR detectors are operated at higher temperatures when compared to their SD predecessors. Therefore, as an additional constraint and as a design goal, the feasibility of achieving upgraded performance without any increase in the size, weight and power consumption of the thermal imager is discussed herein.

Silicon pixel R&D for CLIC

NASA Astrophysics Data System (ADS)

Munker, M.

2017-01-01

Challenging detector requirements are imposed by the physics goals at the future multi-TeV e+ e- Compact Linear Collider (CLIC). A single point resolution of 3 μm for the vertex detector and 7 μm for the tracker is required. Moreover, the CLIC vertex detector and tracker need to be extremely light weighted with a material budget of 0.2% X0 per layer in the vertex detector and 1-2% X0 in the tracker. A fast time slicing of 10 ns is further required to suppress background from beam-beam interactions. A wide range of sensor and readout ASIC technologies are investigated within the CLIC silicon pixel R&D effort. Various hybrid planar sensor assemblies with a pixel size of 25×25 μm2 and 55×55 μm2 have been produced and characterised by laboratory measurements and during test-beam campaigns. Experimental and simulation results for thin (50 μm-500 μm) slim edge and active-edge planar, and High-Voltage CMOS sensors hybridised to various readout ASICs (Timepix, Timepix3, CLICpix) are presented.

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

A bio-image sensor for simultaneous detection of multi-neurotransmitters.

PubMed

Lee, You-Na; Okumura, Koichi; Horio, Tomoko; Iwata, Tatsuya; Takahashi, Kazuhiro; Hattori, Toshiaki; Sawada, Kazuaki

2018-03-01

We report here a new bio-image sensor for simultaneous detection of spatial and temporal distribution of multi-neurotransmitters. It consists of multiple enzyme-immobilized membranes on a 128 × 128 pixel array with read-out circuit. Apyrase and acetylcholinesterase (AChE), as selective elements, are used to recognize adenosine 5'-triphosphate (ATP) and acetylcholine (ACh), respectively. To enhance the spatial resolution, hydrogen ion (H + ) diffusion barrier layers are deposited on top of the bio-image sensor and demonstrated their prevention capability. The results are used to design the space among enzyme-immobilized pixels and the null H + sensor to minimize the undesired signal overlap by H + diffusion. Using this bio-image sensor, we can obtain H + diffusion-independent imaging of concentration gradients of ATP and ACh in real-time. The sensing characteristics, such as sensitivity and detection of limit, are determined experimentally. With the proposed bio-image sensor the possibility exists for customizable monitoring of the activities of various neurochemicals by using different kinds of proton-consuming or generating enzymes. Copyright © 2017 Elsevier B.V. All rights reserved.

An EUDET/AIDA Pixel Beam Telescope for Detector Development

NASA Astrophysics Data System (ADS)

Rubinskiy, I.; EUDET Consortium; AIDA Consortium

Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

Module and electronics developments for the ATLAS ITk pixel system

NASA Astrophysics Data System (ADS)

Muñoz, F. J.

2018-03-01

The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2018. In this paper an overview of the ongoing R&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

Noise characterization of a 512×16 spad line sensor for time-resolved spectroscopy applications

NASA Astrophysics Data System (ADS)

Finlayson, Neil; Usai, Andrea; Erdogan, Ahmet T.; Henderson, Robert K.

2018-02-01

Time-resolved spectroscopy in the presence of noise is challenging. We have developed a new 512 pixel line sensor with 16 single-photon-avalanche (SPAD) detectors per pixel and ultrafast in-pixel time-correlated single photon counting (TCSPC) histogramming for such applications. SPADs are near shot noise limited detectors but we are still faced with the problem of high dark count rate (DCR) SPADs. The noisiest SPADs can be switched off to optimise signal-to-noiseratios (SNR) at the expense of longer acquisition/exposure times than would be possible if more SPADs were exploited. Here we present detailed noise characterization of our array. We build a DCR map for the sensor and demonstrate the effect of switching off the noisiest SPADs in each pixel. 24% percent of SPADs in the array are measured to have DCR in excess of 1kHz, while the best SPAD selection per pixel reduces DCR to 53+/-7Hz across the entire array. We demonstrate that selection of the lowest DCR SPAD in each pixel leads to the emergence of sparse spatial sampling noise in the sensor.

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

NASA Technical Reports Server (NTRS)

Montanaro, Matthew; Reuter, Dennis C.; Markham, Brian L.; Thome, Kurtis J.; Lunsford, Allen W.; Jhabvala, Murzy D.; Rohrbach, Scott O.; Gerace, Aaron D.

2011-01-01

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene.

Estimating pixel variances in the scenes of staring sensors

DOEpatents

Simonson, Katherine M [Cedar Crest, NM; Ma, Tian J [Albuquerque, NM

2012-01-24

A technique for detecting changes in a scene perceived by a staring sensor is disclosed. The technique includes acquiring a reference image frame and a current image frame of a scene with the staring sensor. A raw difference frame is generated based upon differences between the reference image frame and the current image frame. Pixel error estimates are generated for each pixel in the raw difference frame based at least in part upon spatial error estimates related to spatial intensity gradients in the scene. The pixel error estimates are used to mitigate effects of camera jitter in the scene between the current image frame and the reference image frame.

A CMOS image sensor with programmable pixel-level analog processing.

PubMed

Massari, Nicola; Gottardi, Massimo; Gonzo, Lorenzo; Stoppa, David; Simoni, Andrea

2005-11-01

A prototype of a 34 x 34 pixel image sensor, implementing real-time analog image processing, is presented. Edge detection, motion detection, image amplification, and dynamic-range boosting are executed at pixel level by means of a highly interconnected pixel architecture based on the absolute value of the difference among neighbor pixels. The analog operations are performed over a kernel of 3 x 3 pixels. The square pixel, consisting of 30 transistors, has a pitch of 35 microm with a fill-factor of 20%. The chip was fabricated in a 0.35 microm CMOS technology, and its power consumption is 6 mW with 3.3 V power supply. The device was fully characterized and achieves a dynamic range of 50 dB with a light power density of 150 nW/mm2 and a frame rate of 30 frame/s. The measured fixed pattern noise corresponds to 1.1% of the saturation level. The sensor's dynamic range can be extended up to 96 dB using the double-sampling technique.

How Many Pixels Does It Take to Make a Good 4"×6" Print? Pixel Count Wars Revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

Digital still cameras emerged following the introduction of the Sony Mavica analog prototype camera in 1981. These early cameras produced poor image quality and did not challenge film cameras for overall quality. By 1995 digital still cameras in expensive SLR formats had 6 mega-pixels and produced high quality images (with significant image processing). In 2005 significant improvement in image quality was apparent and lower prices for digital still cameras (DSCs) started a rapid decline in film usage and film camera sells. By 2010 film usage was mostly limited to professionals and the motion picture industry. The rise of DSCs was marked by a “pixel war” where the driving feature of the cameras was the pixel count where even moderate cost, ˜120, DSCs would have 14 mega-pixels. The improvement of CMOS technology pushed this trend of lower prices and higher pixel counts. Only the single lens reflex cameras had large sensors and large pixels. The drive for smaller pixels hurt the quality aspects of the final image (sharpness, noise, speed, and exposure latitude). Only today are camera manufactures starting to reverse their course and producing DSCs with larger sensors and pixels. This paper will explore why larger pixels and sensors are key to the future of DSCs.

The effect of split pixel HDR image sensor technology on MTF measurements

NASA Astrophysics Data System (ADS)

Deegan, Brian M.

2014-03-01

Split-pixel HDR sensor technology is particularly advantageous in automotive applications, because the images are captured simultaneously rather than sequentially, thereby reducing motion blur. However, split pixel technology introduces artifacts in MTF measurement. To achieve a HDR image, raw images are captured from both large and small sub-pixels, and combined to make the HDR output. In some cases, a large sub-pixel is used for long exposure captures, and a small sub-pixel for short exposures, to extend the dynamic range. The relative size of the photosensitive area of the pixel (fill factor) plays a very significant role in the output MTF measurement. Given an identical scene, the MTF will be significantly different, depending on whether you use the large or small sub-pixels i.e. a smaller fill factor (e.g. in the short exposure sub-pixel) will result in higher MTF scores, but significantly greater aliasing. Simulations of split-pixel sensors revealed that, when raw images from both sub-pixels are combined, there is a significant difference in rising edge (i.e. black-to-white transition) and falling edge (white-to-black) reproduction. Experimental results showed a difference of ~50% in measured MTF50 between the falling and rising edges of a slanted edge test chart.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Zheng, Xinyu (Inventor)

2002-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Multi-MGy Radiation Hardened Camera for Nuclear Facilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Girard, Sylvain; Boukenter, Aziz; Ouerdane, Youcef

There is an increasing interest in developing cameras for surveillance systems to monitor nuclear facilities or nuclear waste storages. Particularly, for today's and the next generation of nuclear facilities increasing safety requirements consecutive to Fukushima Daiichi's disaster have to be considered. For some applications, radiation tolerance needs to overcome doses in the MGy(SiO{sub 2}) range whereas the most tolerant commercial or prototypes products based on solid state image sensors withstand doses up to few kGy. The objective of this work is to present the radiation hardening strategy developed by our research groups to enhance the tolerance to ionizing radiations ofmore » the various subparts of these imaging systems by working simultaneously at the component and system design levels. Developing radiation-hardened camera implies to combine several radiation-hardening strategies. In our case, we decided not to use the simplest one, the shielding approach. This approach is efficient but limits the camera miniaturization and is not compatible with its future integration in remote-handling or robotic systems. Then, the hardening-by-component strategy appears mandatory to avoid the failure of one of the camera subparts at doses lower than the MGy. Concerning the image sensor itself, the used technology is a CMOS Image Sensor (CIS) designed by ISAE team with custom pixel designs used to mitigate the total ionizing dose (TID) effects that occur well below the MGy range in classical image sensors (e.g. Charge Coupled Devices (CCD), Charge Injection Devices (CID) and classical Active Pixel Sensors (APS)), such as the complete loss of functionality, the dark current increase and the gain drop. We'll present at the conference a comparative study between these radiation-hardened pixel radiation responses with respect to conventional ones, demonstrating the efficiency of the choices made. The targeted strategy to develop the complete radiation hard camera electronics will be exposed. Another important element of the camera is the optical system that transports the image from the scene to the image sensor. This arrangement of glass-based lenses is affected by radiations through two mechanisms: the radiation induced absorption and the radiation induced refractive index changes. The first one will limit the signal to noise ratio of the image whereas the second one will directly affect the resolution of the camera. We'll present at the conference a coupled simulation/experiment study of these effects for various commercial glasses and present vulnerability study of typical optical systems to radiations at MGy doses. The last very important part of the camera is the illumination system that can be based on various technologies of emitting devices like LED, SLED or lasers. The most promising solutions for high radiation doses will be presented at the conference. In addition to this hardening-by-component approach, the global radiation tolerance of the camera can be drastically improve by working at the system level, combining innovative approaches eg. for the optical and illumination systems. We'll present at the conference the developed approach allowing to extend the camera lifetime up to the MGy dose range. (authors)« less

Laser-induced forward transfer of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Palla-Papavlu, A.; Dinescu, M.; Wokaun, A.; Lippert, T.

2014-10-01

The objective of this work is the application of laser-induced forward transfer (LIFT) for the fabrication of chemiresistor sensors. The receiver substrate is an array with metal electrodes and the active materials placed by LIFT are single-walled carbon nanotubes (SWCNT). The functionality of such sensors depends on the geometry of the active material onto the metallic electrodes. First the best geometry for the sensing materials and electrodes was determined, including the optimization of the process parameters for printing uniform pixels of SWCNT onto the sensor electrodes. The sensors were characterized in terms of their sensing characteristics, i.e., upon exposure to ammonia, proving the feasibility of LIFT.

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Huang, Shaoyan; Liu, Minbo

The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 10{sup 8} n/cm{sup 2}s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 10{sup 11}, 5 × 10{sup 11}, and 1 × 10{sup 12} n/cm{sup 2}, respectively. The mean dark signal (K{sub D}), dark signal spike, dark signal non-uniformity (DSNU), noise (V{sub N}), saturation output signal voltage (V{sub S}), and dynamic rangemore » (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.« less

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

Wafer-scale pixelated detector system

DOEpatents

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

The role of c-Jun in controlling the EPAC1-dependent induction of the SOCS3 gene in HUVECs

PubMed Central

Wiejak, Jolanta; Dunlop, Julia; Yarwood, Stephen J.

2014-01-01

The cyclic AMP sensor, EPAC1, activates AP1-mediated transcription in HUVECs. Correspondingly, induction of the SOCS3 minimal promoter by EPAC1 requires a single AP1 site that constitutively binds phosphorylated (Ser63) c-Jun in DNA-pull-down assays. c-Jun (Ser63) becomes further phosphorylated following cyclic AMP stimulation and specific activation of protein kinase A (PKA), but not through selective activation of EPAC1. Moreover, despite a requirement for c-Jun for SOCS3 induction in fibroblasts, phospho-null c-Jun (Ser63/73Ala) had little effect on SOCS3 induction by cyclic AMP in HUVECs. AP1 activation and SOCS3 induction by EPAC1 in HUVECs therefore occur independently of c-Jun phosphorylation on Ser63. PMID:24631457

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

PubMed Central

Hirvonen, Liisa M.; Suhling, Klaus

2016-01-01

Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

NASA Astrophysics Data System (ADS)

Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-01

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Comparison of Spectral and Scintillation Properties of LuAP:Ce and LuAP:Ce,Sc Single Crystals

NASA Astrophysics Data System (ADS)

Petrosyan, Ashot G.; Derdzyan, Marina; Ovanesyan, Karine; Shirinyan, Grigori; Lecoq, Paul; Auffray, Etiennette; Kronberger, Matthias; Frisch, Benjamin; Pedrini, Christian; Dujardin, Christophe

2009-10-01

Scintillation properties of LuAP:Ce and LuAP:Ce,Sc crystal series were studied under excitation by gamma-rays from a 137Cs source. Both series demonstrated comparable optical quality in terms of underlying absorption at 260 nm, slope of the optical edge and transmission in the range of emission. The light yield of LuAP:Ce crystals measured in 0.2 cm times 0.2 cm times 0.8 cm pixels increases linearly with the Ce concentration reaching at 0.58 at. % 6448 plusmn 322 ph/MeV and 9911 plusmn 496 ph/MeV in the long and in the short directions respectively (the light yield ratio is 65%) and shows no sign of light saturation. The energy resolution is found to depend, among other factors, on the uniformity of Ce concentration within the pixels and is improved to 7.1 plusmn 0.4% (I = 0.2 cm), 9.5 plusmn 0.5% (I = 0.8 cm). Intentional co-doping with Sc + ions was tested and resulted in increase of the Ce distribution coefficient to about 0.3. This enabled to increase the concentration of Ce in LuAP:Ce,Sc crystals up to 0.7 at. %, while conserving high optical quality. In contrast to LuAP:Ce, the light yield in LuAP:Ce,Sc crystals does not increase with Ce concentration, the photo peak being gradually suppressed. The involved mechanisms are discussed basing on measurements of the unit cell volumes, Ce concentration uniformity, x-ray rocking spectra, absorption spectra of pure and variously doped LuAP crystals, and emission spectra under different excitations.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.

PubMed

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-12

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke - . Readout noise under the highest pixel gain condition is 1 e - with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7", 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

PubMed Central

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-01

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach. PMID:29329210

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

MAPS development for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-03-01

Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. This contribution will focus on MAPS detectors developed for the ALICE Inner Tracking System (ITS) upgrade and manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Several sensor chip prototypes have been developed and produced to optimise both charge collection and readout circuitry. The chips have been characterised using electrical measurements, radioactive sources and particle beams. The tests indicate that the sensors satisfy the ALICE requirements and first prototypes with the final size of 1.5 × 3 cm2 have been produced in the first half of 2014. This contribution summarises the characterisation measurements and presents first results from the full-scale chips.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

NASA Astrophysics Data System (ADS)

Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

2017-02-01

Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

Image Sensors Enhance Camera Technologies

NASA Technical Reports Server (NTRS)

2010-01-01

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.

PubMed

Seo, Min-Woong; Kawahito, Shoji

2017-12-01

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

PubMed Central

Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David

2016-01-01

This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm) and high fill factor (>20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved. PMID:27223284

Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

2016-09-01

We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

The role of c-Jun in controlling the EPAC1-dependent induction of the SOCS3 gene in HUVECs.

PubMed

Wiejak, Jolanta; Dunlop, Julia; Yarwood, Stephen J

2014-05-02

The cyclic AMP sensor, EPAC1, activates AP1-mediated transcription in HUVECs. Correspondingly, induction of the SOCS3 minimal promoter by EPAC1 requires a single AP1 site that constitutively binds phosphorylated (Ser63) c-Jun in DNA-pull-down assays. c-Jun (Ser63) becomes further phosphorylated following cyclic AMP stimulation and specific activation of protein kinase A (PKA), but not through selective activation of EPAC1. Moreover, despite a requirement for c-Jun for SOCS3 induction in fibroblasts, phospho-null c-Jun (Ser63/73Ala) had little effect on SOCS3 induction by cyclic AMP in HUVECs. AP1 activation and SOCS3 induction by EPAC1 in HUVECs therefore occur independently of c-Jun phosphorylation on Ser63. Copyright © 2014 The Authors. Published by Elsevier B.V. All rights reserved.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Lütticke, F.

2013-02-01

The existing Japanese Flavour Factory (KEKB) is currently being upgraded and is foreseen to be comissioned by 2014. The new e+e- collider (SuperKEKB) will have an instantaneous luminosity of 8 × 1035cm-2s-1, 40 times higher than the current world record set by KEKB. In order to handle the increased event rate and the higher background and provide high data quality, the Belle detector is upgraded to Belle II. The increased particle rate requires a new vertex pixel detector with high granularity. This silicon detector will be based on DEPFET technology and will consist of two layers of active pixel sensors. By integrating a field effect transistor into every pixel on top of a fully depleted bulk, the DEPFET technology combines detection and in-pixel amplification. This technology allows good signal to noise performance with a very low material budget.

A sun-crown-sensor model and adapted C-correction logic for topographic correction of high resolution forest imagery

NASA Astrophysics Data System (ADS)

Fan, Yuanchao; Koukal, Tatjana; Weisberg, Peter J.

2014-10-01

Canopy shadowing mediated by topography is an important source of radiometric distortion on remote sensing images of rugged terrain. Topographic correction based on the sun-canopy-sensor (SCS) model significantly improved over those based on the sun-terrain-sensor (STS) model for surfaces with high forest canopy cover, because the SCS model considers and preserves the geotropic nature of trees. The SCS model accounts for sub-pixel canopy shadowing effects and normalizes the sunlit canopy area within a pixel. However, it does not account for mutual shadowing between neighboring pixels. Pixel-to-pixel shadowing is especially apparent for fine resolution satellite images in which individual tree crowns are resolved. This paper proposes a new topographic correction model: the sun-crown-sensor (SCnS) model based on high-resolution satellite imagery (IKONOS) and high-precision LiDAR digital elevation model. An improvement on the C-correction logic with a radiance partitioning method to address the effects of diffuse irradiance is also introduced (SCnS + C). In addition, we incorporate a weighting variable, based on pixel shadow fraction, on the direct and diffuse radiance portions to enhance the retrieval of at-sensor radiance and reflectance of highly shadowed tree pixels and form another variety of SCnS model (SCnS + W). Model evaluation with IKONOS test data showed that the new SCnS model outperformed the STS and SCS models in quantifying the correlation between terrain-regulated illumination factor and at-sensor radiance. Our adapted C-correction logic based on the sun-crown-sensor geometry and radiance partitioning better represented the general additive effects of diffuse radiation than C parameters derived from the STS or SCS models. The weighting factor Wt also significantly enhanced correction results by reducing within-class standard deviation and balancing the mean pixel radiance between sunlit and shaded slopes. We analyzed these improvements with model comparison on the red and near infrared bands. The advantages of SCnS + C and SCnS + W on both bands are expected to facilitate forest classification and change detection applications.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

First evidence of phase-contrast imaging with laboratory sources and active pixel sensors

NASA Astrophysics Data System (ADS)

Olivo, A.; Arvanitis, C. D.; Bohndiek, S. E.; Clark, A. T.; Prydderch, M.; Turchetta, R.; Speller, R. D.

2007-11-01

The aim of the present work is to achieve a first step towards combining the advantages of an innovative X-ray imaging technique—phase-contrast imaging (XPCi)—with those of a new class of sensors, i.e. CMOS-based active pixel sensors (APSs). The advantages of XPCi are well known and include increased image quality and detection of details invisible to conventional techniques, with potential application fields encompassing the medical, biological, industrial and security areas. Vanilla, one of the APSs developed by the MI-3 collaboration (see http://mi3.shef.ac.uk), was thoroughly characterised and an appropriate scintillator was selected to provide X-ray sensitivity. During this process, a set of phase-contrast images of different biological samples was acquired by means of the well-established free-space propagation XPCi technique. The obtained results are very encouraging and are in optimum agreement with the predictions of a simulation recently developed by some of the authors thus further supporting its reliability. This paper presents these preliminary results in detail and discusses in brief both the background to this work and its future developments.

Pitch dependence of the tolerance of CMOS monolithic active pixel sensors to non-ionizing radiation

NASA Astrophysics Data System (ADS)

Doering, D.; Deveaux, M.; Domachowski, M.; Fröhlich, I.; Koziel, M.; Müntz, C.; Scharrer, P.; Stroth, J.

2013-12-01

CMOS monolithic active pixel sensors (MAPS) have demonstrated excellent performance as tracking detectors for charged particles. They provide an outstanding spatial resolution (a few μm), a detection efficiency of ≳ 99.9 %, very low material budget (0.05 %X0) and good radiation tolerance (≳ 1 Mrad, ≳1013neq /cm2) (Deveaux et al. [1]). This makes them an interesting technology for various applications in heavy ion and particle physics. Their tolerance to bulk damage was recently improved by using high-resistivity (∼ 1 kΩ cm) epitaxial layers as sensitive volume (Deveaux et al. [1], Dorokhov et al. [2]). The radiation tolerance of conventional MAPS is known to depend on the pixel pitch. This is as a higher pitch extends the distance, which signal electrons have to travel by thermal diffusion before being collected. Increased diffusion paths turn into a higher probability of loosing signal charge due to recombination. Provided that a similar effect exists in MAPS with high-resistivity epitaxial layer, it could be used to extend their radiation tolerance further. We addressed this question with MIMOSA-18AHR prototypes, which were provided by the IPHC Strasbourg and irradiated with reactor neutrons. We report about the results of this study and provide evidences that MAPS with 10 μm pixel pitch tolerate doses of ≳ 3 ×1014neq /cm2.

Rapid Chemometric Filtering of Spectral Data

NASA Technical Reports Server (NTRS)

Beaman, Gregory; Pelletier, Michael; Seshadri, Suresh

2004-01-01

A method of rapid, programmable filtering of spectral transmittance, reflectance, or fluorescence data to measure the concentrations of chemical species has been proposed. By programmable is meant that a variety of spectral analyses can readily be performed and modified in software, firmware, and/or electronic hardware, without need to change optical filters or other optical hardware of the associated spectrometers. The method is intended to enable real-time identification of single or multiple target chemical species in applications that involve high-throughput screening of multiple samples. Examples of such applications include (but are not limited to) combinatorial chemistry, flow cytometry, bead assays, testing drugs, remote sensing, and identification of targets. The basic concept of the proposed method is to perform real-time crosscorrelations of a measured spectrum with one or more analytical function(s) of wavelength that could be, for example, the known spectra of target species. Assuming that measured spectral intensities are proportional to concentrations of target species plus background spectral intensities, then after subtraction of background levels, it should be possible to determine target species concentrations from cross-correlation values. Of course, the problem of determining the concentrations is more complex when spectra of different species overlap, but the problem can be solved by use of multiple analytical functions in combination with computational techniques that have been developed previously for analyses of this type. The method is applicable to the design and operation of a spectrometer in which spectrally dispersed light is measured by means of an active-pixel sensor (APS) array. The row or column dimension of such an array is generally chosen to be aligned along the spectral-dispersion dimension, so that each pixel intercepts light in a narrow spectral band centered on a wavelength that is a known function of the pixel position. The proposed method admits of two hardware implementations for computing cross-correlations in real time.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

PubMed

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk; Lee, Myunghee

2018-01-19

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

Transparent Fingerprint Sensor System for Large Flat Panel Display

PubMed Central

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk

2018-01-01

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger’s ridges and valleys through the fingerprint sensor array. PMID:29351218

High-speed high-resolution epifluorescence imaging system using CCD sensor and digital storage for neurobiological research

NASA Astrophysics Data System (ADS)

Takashima, Ichiro; Kajiwara, Riichi; Murano, Kiyo; Iijima, Toshio; Morinaka, Yasuhiro; Komobuchi, Hiroyoshi

2001-04-01

We have designed and built a high-speed CCD imaging system for monitoring neural activity in an exposed animal cortex stained with a voltage-sensitive dye. Two types of custom-made CCD sensors were developed for this system. The type I chip has a resolution of 2664 (H) X 1200 (V) pixels and a wide imaging area of 28.1 X 13.8 mm, while the type II chip has 1776 X 1626 pixels and an active imaging area of 20.4 X 18.7 mm. The CCD arrays were constructed with multiple output amplifiers in order to accelerate the readout rate. The two chips were divided into either 24 (I) or 16 (II) distinct areas that were driven in parallel. The parallel CCD outputs were digitized by 12-bit A/D converters and then stored in the frame memory. The frame memory was constructed with synchronous DRAM modules, which provided a capacity of 128 MB per channel. On-chip and on-memory binning methods were incorporated into the system, e.g., this enabled us to capture 444 X 200 pixel-images for periods of 36 seconds at a rate of 500 frames/second. This system was successfully used to visualize neural activity in the cortices of rats, guinea pigs, and monkeys.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Commercial CMOS image sensors as X-ray imagers and particle beam monitors

NASA Astrophysics Data System (ADS)

Castoldi, A.; Guazzoni, C.; Maffessanti, S.; Montemurro, G. V.; Carraresi, L.

2015-01-01

CMOS image sensors are widely used in several applications such as mobile handsets webcams and digital cameras among others. Furthermore they are available across a wide range of resolutions with excellent spectral and chromatic responses. In order to fulfill the need of cheap systems as beam monitors and high resolution image sensors for scientific applications we exploited the possibility of using commercial CMOS image sensors as X-rays and proton detectors. Two different sensors have been mounted and tested. An Aptina MT9v034, featuring 752 × 480 pixels, 6μm × 6μm pixel size has been mounted and successfully tested as bi-dimensional beam profile monitor, able to take pictures of the incoming proton bunches at the DeFEL beamline (1-6 MeV pulsed proton beam) of the LaBeC of INFN in Florence. The naked sensor is able to successfully detect the interactions of the single protons. The sensor point-spread-function (PSF) has been qualified with 1MeV protons and is equal to one pixel (6 mm) r.m.s. in both directions. A second sensor MT9M032, featuring 1472 × 1096 pixels, 2.2 × 2.2 μm pixel size has been mounted on a dedicated board as high-resolution imager to be used in X-ray imaging experiments with table-top generators. In order to ease and simplify the data transfer and the image acquisition the system is controlled by a dedicated micro-processor board (DM3730 1GHz SoC ARM Cortex-A8) on which a modified LINUX kernel has been implemented. The paper presents the architecture of the sensor systems and the results of the experimental measurements.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

PubMed

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

2009-01-01

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

PubMed

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-12-05

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e - /s at 60 °C, an ultra-low read noise of 0.90 e - ·rms, a high full well capacity (FWC) of 4100 e - , and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

Construction of highly ordered polyaniline nanowires and their applications in DNA sensing.

PubMed

Hao, Yuanqiang; Zhou, Binbin; Wang, Fangbin; Li, Juan; Deng, Liu; Liu, You-Nian

2014-02-15

A novel electrochemical active polyaniline (PANI) nanowire was fabricated and utilized for the construction of a highly sensitive and selective electrochemical sensor for hepatitis B virus gene. The uniform PANI nanowire was prepared by the enzymatic polymerization of aniline monomers on the amyloid-like nanofiber (AP nanowire), which was self-assembled from an aniline-attached nonapeptide, aniline-GGAAKLVFF (AP). The prepared PANI nanowires were characterized by electron microscopy, UV-vis absorption spectra, and cyclic voltammetry (CV). These ultra-thin nanowires displayed high electrochemical activity. Then the nucleic acid biosensor was constructed by modifying a glass carbon electrode with AP nanowires which were functionalized by a designed hair-pin loop DNA. Upon the presence of target nucleic acid and horseradish peroxidase (HRP) labeled oligonucleotide, the HRP will catalyze the polymerization of aniline monomers conjugated in AP nanowires, leading to the formation of PANI nanowires which can bring about a dramatical increase in the current response of the biosensor. The dynamic range of the sensor for hepatitis B virus gene is 2.0-800.0 fM with a low detection limit of 1.0 fM (3σ, n=10). The biosensor also displayed highly selectivity and stability. All these excellent performances of the developed biosensor indicate that this platform can be easily extended to the detection of other nucleic acids. © 2013 Elsevier B.V. All rights reserved.

Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology.

PubMed

Sasagawa, Kiyotaka; Shishido, Sanshiro; Ando, Keisuke; Matsuoka, Hitoshi; Noda, Toshihiko; Tokuda, Takashi; Kakiuchi, Kiyomi; Ohta, Jun

2013-05-06

In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 μm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Branching Ratios for The Radiometric Calibration of EUNIS-2012

NASA Technical Reports Server (NTRS)

Daw, Adrian N.; Bhatia, A. K.; Rabin, Douglas M.

2012-01-01

The Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket instrument is a two-channel imaging spectrograph that observes the solar corona and transition region with high spectral resolution and a rapid cadence made possible by unprecedented sensitivity. The upcoming flight will incorporate a new wavelength channel covering the range 524-630 Angstroms, the previously-flown 300-370 Angstroms channel, and the first flight demonstration of cooled active pixel sensor (APS) arrays. The new 524-630 Angstrom channel incorporates a Toroidal Varied Line Space (TVLS) grating coated with B4C/Ir, providing broad spectral coverage and a wide temperature range of 0.025 to 10 MK. Absolute radiometric calibration of the two channels is being performed using a hollow cathode discharge lamp and NIST-calibrated AXUV-100G photodiode. Laboratory observations of He I 584 Angstroms and He II 304 Angstroms provide absolute radiometric calibrations of the two channels at those two respective wavelengths by using the AXUV photodiode as a transfer standard. The spectral responsivity is being determined by observing line pairs with a common upper state in the spectra of Ne I-III and Ar II-III. Calculations of A-values for the observed branching ratios are in progress.

The SWAP EUV Imaging Telescope Part I: Instrument Overview and Pre-Flight Testing

NASA Astrophysics Data System (ADS)

Seaton, D. B.; Berghmans, D.; Nicula, B.; Halain, J.-P.; De Groof, A.; Thibert, T.; Bloomfield, D. S.; Raftery, C. L.; Gallagher, P. T.; Auchère, F.; Defise, J.-M.; D'Huys, E.; Lecat, J.-H.; Mazy, E.; Rochus, P.; Rossi, L.; Schühle, U.; Slemzin, V.; Yalim, M. S.; Zender, J.

2013-08-01

The Sun Watcher with Active Pixels and Image Processing (SWAP) is an EUV solar telescope onboard ESA's Project for Onboard Autonomy 2 (PROBA2) mission launched on 2 November 2009. SWAP has a spectral bandpass centered on 17.4 nm and provides images of the low solar corona over a 54×54 arcmin field-of-view with 3.2 arcsec pixels and an imaging cadence of about two minutes. SWAP is designed to monitor all space-weather-relevant events and features in the low solar corona. Given the limited resources of the PROBA2 microsatellite, the SWAP telescope is designed with various innovative technologies, including an off-axis optical design and a CMOS-APS detector. This article provides reference documentation for users of the SWAP image data.

3D Spatial and Spectral Fusion of Terrestrial Hyperspectral Imagery and Lidar for Hyperspectral Image Shadow Restoration Applied to a Geologic Outcrop

NASA Astrophysics Data System (ADS)

Hartzell, P. J.; Glennie, C. L.; Hauser, D. L.; Okyay, U.; Khan, S.; Finnegan, D. C.

2016-12-01

Recent advances in remote sensing technology have expanded the acquisition and fusion of active lidar and passive hyperspectral imagery (HSI) from an exclusively airborne technique to terrestrial modalities. This enables high resolution 3D spatial and spectral quantification of vertical geologic structures for applications such as virtual 3D rock outcrop models for hydrocarbon reservoir analog analysis and mineral quantification in open pit mining environments. In contrast to airborne observation geometry, the vertical surfaces observed by horizontal-viewing terrestrial HSI sensors are prone to extensive topography-induced solar shadowing, which leads to reduced pixel classification accuracy or outright removal of shadowed pixels from analysis tasks. Using a precisely calibrated and registered offset cylindrical linear array camera model, we demonstrate the use of 3D lidar data for sub-pixel HSI shadow detection and the restoration of the shadowed pixel spectra via empirical methods that utilize illuminated and shadowed pixels of similar material composition. We further introduce a new HSI shadow restoration technique that leverages collocated backscattered lidar intensity, which is resistant to solar conditions, obtained by projecting the 3D lidar points through the HSI camera model into HSI pixel space. Using ratios derived from the overlapping lidar laser and HSI wavelengths, restored shadow pixel spectra are approximated using a simple scale factor. Simulations of multiple lidar wavelengths, i.e., multi-spectral lidar, indicate the potential for robust HSI spectral restoration that is independent of the complexity and costs associated with rigorous radiometric transfer models, which have yet to be developed for horizontal-viewing terrestrial HSI sensors. The spectral restoration performance is quantified through HSI pixel classification consistency between full sun and partial sun exposures of a single geologic outcrop.

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

A robust color signal processing with wide dynamic range WRGB CMOS image sensor

NASA Astrophysics Data System (ADS)

Kawada, Shun; Kuroda, Rihito; Sugawa, Shigetoshi

2011-01-01

We have developed a robust color reproduction methodology by a simple calculation with a new color matrix using the formerly developed wide dynamic range WRGB lateral overflow integration capacitor (LOFIC) CMOS image sensor. The image sensor was fabricated through a 0.18 μm CMOS technology and has a 45 degrees oblique pixel array, the 4.2 μm effective pixel pitch and the W pixels. A W pixel was formed by replacing one of the two G pixels in the Bayer RGB color filter. The W pixel has a high sensitivity through the visible light waveband. An emerald green and yellow (EGY) signal is generated from the difference between the W signal and the sum of RGB signals. This EGY signal mainly includes emerald green and yellow lights. These colors are difficult to be reproduced accurately by the conventional simple linear matrix because their wave lengths are in the valleys of the spectral sensitivity characteristics of the RGB pixels. A new linear matrix based on the EGY-RGB signal was developed. Using this simple matrix, a highly accurate color processing with a large margin to the sensitivity fluctuation and noise has been achieved.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Diamond Pixel Detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Gobbi, B.; Grim, G. P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Pirollo, S.; Plano, R.; Procario, M.; Riester, J. L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.

2001-06-01

Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

Germanium ``hexa'' detector: production and testing

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

2017-01-01

Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

CMOS image sensors: State-of-the-art

NASA Astrophysics Data System (ADS)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures

PubMed Central

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2010-01-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n+/p-sub, n-well/p-sub and p+/n-well/p-sub. All structures were fabricated in a 0.5 μm 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated—the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 × and 1.6 × over the n+/p-sub and p+/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 × and 1.2 × improvement over the n+/p-sub and p+/n-well/p-sub diodes, respectively) while the p+/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity. PMID:20454596

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures.

PubMed

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2009-07-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Low temperature performance of a commercially available InGaAs image sensor

NASA Astrophysics Data System (ADS)

Nakaya, Hidehiko; Komiyama, Yutaka; Kashikawa, Nobunari; Uchida, Tomohisa; Nagayama, Takahiro; Yoshida, Michitoshi

2016-08-01

We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e- and 20 e- /sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

Hardware-in-the-loop projector system for light detection and ranging sensor testing

NASA Astrophysics Data System (ADS)

Kim, Hajin J.; Naumann, Charles B.; Cornell, Michael C.

2012-08-01

Efforts in developing a synthetic environment for testing light detection and ranging (LADAR) sensors in a hardware-in-the-loop simulation are continuing at the Aviation and Missile Research, Engineering, and Development Center of the U.S. Army Research, Engineering and Development Command (RDECOM). Current activities have concentrated on evaluating the optical projection techniques for the LADAR synthetic environment. Schemes for generating the optical signals representing the individual pixels of the projection are of particular interest. Several approaches have been investigated and tested with emphasis on operating wavelength, intensity dynamic range and uniformity, and flexibility in pixel waveform generation. This paper will discuss some of the results from these current efforts at RDECOM's System Simulation and Development Directorate's Electro Optical Technology Development Laboratory.

Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

PubMed

Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

2012-01-01

We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

Image acquisition system using on sensor compressed sampling technique

NASA Astrophysics Data System (ADS)

Gupta, Pravir Singh; Choi, Gwan Seong

2018-01-01

Advances in CMOS technology have made high-resolution image sensors possible. These image sensors pose significant challenges in terms of the amount of raw data generated, energy efficiency, and frame rate. This paper presents a design methodology for an imaging system and a simplified image sensor pixel design to be used in the system so that the compressed sensing (CS) technique can be implemented easily at the sensor level. This results in significant energy savings as it not only cuts the raw data rate but also reduces transistor count per pixel; decreases pixel size; increases fill factor; simplifies analog-to-digital converter, JPEG encoder, and JPEG decoder design; decreases wiring; and reduces the decoder size by half. Thus, CS has the potential to increase the resolution of image sensors for a given technology and die size while significantly decreasing the power consumption and design complexity. We show that it has potential to reduce power consumption by about 23% to 65%.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

NASA Astrophysics Data System (ADS)

Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

2015-04-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Assessment of the short-term radiometric stability between Terra MODIS and Landsat 7 ETM+ sensors

USGS Publications Warehouse

Choi, Taeyoung; Xiong, Xiaoxiong; Chander, Gyanesh; Angal, A.

2009-01-01

Short-term radiometric stability was evaluated using continuous ETM+ scenes within a single orbit (contact period) and the corresponding MODIS scenes for the four matching solar reflective visible and near-infrared (VNIR) band pairs between the two sensors. The near-simultaneous earth observations were limited by the smaller swath size of ETM+ (183 km) compared to MODIS (2330 km). Two sets of continuous granules for Terra MODIS and Landsat 7 ETM+ were selected and mosaicked based on pixel geolocation information for noncloudy pixels over the African continent. The matching pixel pairs were resampled from a fine to a coarse pixel resolution, and the at-sensor spectral radiance values for a wide dynamic range of the sensors were compared and analyzed, covering various surface types. The following study focuses on radiometric stability analysis from the VNIR band-pairs of ETM+ and MODIS. The Libya-4 desert target was included in the path of this continuous orbit, which served as a verification point between the short-term and the long-term trending results from previous studies. MODTRAN at-sensor spectral radiance simulation is included for a representative desert surface type to evaluate the consistency of the results.

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

NASA Astrophysics Data System (ADS)

Wang, Kai; Ou, Hai; Chen, Jun

2015-06-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

A novel digital image sensor with row wise gain compensation for Hyper Spectral Imager (HySI) application

NASA Astrophysics Data System (ADS)

Lin, Shengmin; Lin, Chi-Pin; Wang, Weng-Lyang; Hsiao, Feng-Ke; Sikora, Robert

2009-08-01

A 256x512 element digital image sensor has been developed which has a large pixel size, slow scan and low power consumption for Hyper Spectral Imager (HySI) applications. The device is a mixed mode, silicon on chip (SOC) IC. It combines analog circuitry, digital circuitry and optical sensor circuitry into a single chip. This chip integrates a 256x512 active pixel sensor array, a programming gain amplifier (PGA) for row wise gain setting, I2C interface, SRAM, 12 bit analog to digital convertor (ADC), voltage regulator, low voltage differential signal (LVDS) and timing generator. The device can be used for 256 pixels of spatial resolution and 512 bands of spectral resolution ranged from 400 nm to 950 nm in wavelength. In row wise gain readout mode, one can set a different gain on each row of the photo detector by storing the gain setting data on the SRAM thru the I2C interface. This unique row wise gain setting can be used to compensate the silicon spectral response non-uniformity problem. Due to this unique function, the device is suitable for hyper-spectral imager applications. The HySI camera located on-board the Chandrayaan-1 satellite, was successfully launched to the moon on Oct. 22, 2008. The device is currently mapping the moon and sending back excellent images of the moon surface. The device design and the moon image data will be presented in the paper.

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

The progress of sub-pixel imaging methods

NASA Astrophysics Data System (ADS)

Wang, Hu; Wen, Desheng

2014-02-01

This paper reviews the Sub-pixel imaging technology principles, characteristics, the current development status at home and abroad and the latest research developments. As Sub-pixel imaging technology has achieved the advantages of high resolution of optical remote sensor, flexible working ways and being miniaturized with no moving parts. The imaging system is suitable for the application of space remote sensor. Its application prospect is very extensive. It is quite possible to be the research development direction of future space optical remote sensing technology.

A 256×256 low-light-level CMOS imaging sensor with digital CDS

NASA Astrophysics Data System (ADS)

Zou, Mei; Chen, Nan; Zhong, Shengyou; Li, Zhengfen; Zhang, Jicun; Yao, Li-bin

2016-10-01

In order to achieve high sensitivity for low-light-level CMOS image sensors (CIS), a capacitive transimpedance amplifier (CTIA) pixel circuit with a small integration capacitor is used. As the pixel and the column area are highly constrained, it is difficult to achieve analog correlated double sampling (CDS) to remove the noise for low-light-level CIS. So a digital CDS is adopted, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise and part of the column fixed-pattern noise (FPN) can be greatly reduced. A 256×256 CIS with CTIA array and digital CDS is implemented in the 0.35μm CMOS technology. The chip size is 7.7mm×6.75mm, and the pixel size is 15μm×15μm with a fill factor of 20.6%. The measured pixel noise is 24LSB with digital CDS in RMS value at dark condition, which shows 7.8× reduction compared to the image sensor without digital CDS. Running at 7fps, this low-light-level CIS can capture recognizable images with the illumination down to 0.1lux.

Chemiresistive Graphene Sensors for Ammonia Detection.

PubMed

Mackin, Charles; Schroeder, Vera; Zurutuza, Amaia; Su, Cong; Kong, Jing; Swager, Timothy M; Palacios, Tomás

2018-05-09

The primary objective of this work is to demonstrate a novel sensor system as a convenient vehicle for scaled-up repeatability and the kinetic analysis of a pixelated testbed. This work presents a sensor system capable of measuring hundreds of functionalized graphene sensors in a rapid and convenient fashion. The sensor system makes use of a novel array architecture requiring only one sensor per pixel and no selector transistor. The sensor system is employed specifically for the evaluation of Co(tpfpp)ClO 4 functionalization of graphene sensors for the detection of ammonia as an extension of previous work. Co(tpfpp)ClO 4 treated graphene sensors were found to provide 4-fold increased ammonia sensitivity over pristine graphene sensors. Sensors were also found to exhibit excellent selectivity over interfering compounds such as water and common organic solvents. The ability to monitor a large sensor array with 160 pixels provides insights into performance variations and reproducibility-critical factors in the development of practical sensor systems. All sensors exhibit the same linearly related responses with variations in response exhibiting Gaussian distributions, a key finding for variation modeling and quality engineering purposes. The mean correlation coefficient between sensor responses was found to be 0.999 indicating highly consistent sensor responses and excellent reproducibility of Co(tpfpp)ClO 4 functionalization. A detailed kinetic model is developed to describe sensor response profiles. The model consists of two adsorption mechanisms-one reversible and one irreversible-and is shown capable of fitting experimental data with a mean percent error of 0.01%.

Studies of prototype DEPFET sensors for the Wide Field Imager of Athena

NASA Astrophysics Data System (ADS)

Treberspurg, Wolfgang; Andritschke, Robert; Bähr, Alexander; Behrens, Annika; Hauser, Günter; Lechner, Peter; Meidinger, Norbert; Müller-Seidlitz, Johannes; Treis, Johannes

2017-08-01

The Wide Field Imager (WFI) of ESA's next X-ray observatory Athena will combine a high count rate capability with a large field of view, both with state-of-the-art spectroscopic performance. To meet these demands, specific DEPFET active pixel detectors have been developed and operated. Due to the intrinsic amplification of detected signals they are best suited to achieve a high speed and low noise performance. Different fabrication technologies and transistor geometries have been implemented on a dedicated prototype production in the course of the development of the DEPFET sensors. The main modifications between the sensors concern the shape of the transistor gate - regarding the layout - and the thickness of the gate oxide - regarding the technology. To facilitate the fabrication and testing of the resulting variety of sensors the presented studies were carried out with 64×64 pixel detectors. The detector comprises a control ASIC (Switcher-A), a readout ASIC (VERITAS- 2) and the sensor. In this paper we give an overview on the evaluation of different prototype sensors. The most important results, which have been decisive for the identification of the optimal fabrication technology and transistor layout for subsequent sensor productions are summarized. It will be shown that the developments result in an excellent performance of spectroscopic X-ray DEPFETs with typical noise values below 2.5 ENC at 2.5 μs/row.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

CMOS active pixel sensor type imaging system on a chip

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nixon, Robert (Inventor)

2011-01-01

A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.

High-End CMOS Active Pixel Sensors For Space-Borne Imaging Instruments

DTIC Science & Technology

2005-07-13

DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release, distribution unlimited 13. SUPPLEMENTARY NOTES See also ADM001791, Potentially Disruptive ... Technologies and Their Impact in Space Programs Held in Marseille, France on 4-6 July 2005. , The original document contains color images. 14

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

Development of CMOS pixel sensors for the upgrade of the ALICE Inner Tracking System

NASA Astrophysics Data System (ADS)

Molnar, L.

2014-12-01

The ALICE Collaboration is preparing a major upgrade of the current detector, planned for installation during the second long LHC shutdown in the years 2018-19, in order to enhance its low-momentum vertexing and tracking capability, and exploit the planned increase of the LHC luminosity with Pb beams. One of the cornerstones of the ALICE upgrade strategy is to replace the current Inner Tracking System in its entirety with a new, high resolution, low-material ITS detector. The new ITS will consist of seven concentric layers equipped with Monolithic Active Pixel Sensors (MAPS) implemented using the 0.18 μm CMOS technology of TowerJazz. In this contribution, the main key features of the ITS upgrade will be illustrated with emphasis on the functionality of the pixel chip. The ongoing developments on the readout architectures, which have been implemented in several fabricated prototypes, will be discussed. The operational features of these prototypes as well as the results of the characterisation tests before and after irradiation will also be presented.

Development and test of an active pixel sensor detector for heliospheric imager on solar orbiter and solar probe plus

NASA Astrophysics Data System (ADS)

Korendyke, Clarence M.; Vourlidas, Angelos; Plunkett, Simon P.; Howard, Russell A.; Wang, Dennis; Marshall, Cheryl J.; Waczynski, Augustyn; Janesick, James J.; Elliott, Thomas; Tun, Samuel; Tower, John; Grygon, Mark; Keller, David; Clifford, Gregory E.

2013-10-01

The Naval Research Laboratory is developing next generation CMOS imaging arrays for the Solar Orbiter and Solar Probe Plus missions. The device development is nearly complete with flight device delivery scheduled for summer of 2013. The 4Kx4K mosaic array with 10micron pixels is well suited to the panoramic imaging required for the Solar Orbiter mission. The devices are robust (<100krad) and exhibit minimal performance degradation with respect to radiation. The device design and performance are described.

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

A novel source-drain follower for monolithic active pixel sensors

NASA Astrophysics Data System (ADS)

Gao, C.; Aglieri, G.; Hillemanns, H.; Huang, G.; Junique, A.; Keil, M.; Kim, D.; Kofarago, M.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mugnier, H.; Musa, L.; Lee, S.; Reidt, F.; Riedler, P.; Rousset, J.; Sielewicz, K. M.; Snoeys, W.; Sun, X.; Van Hoorne, J. W.; Yang, P.

2016-09-01

Monolithic active pixel sensors (MAPS) receive interest in tracking applications in high energy physics as they integrate sensor and readout electronics in one silicon die with potential for lower material budget and cost, and better performance. Source followers (SFs) are widely used for MAPS readout: they increase charge conversion gain 1/Ceff or decrease the effective sensing node capacitance Ceff because the follower action compensates part of the input capacitance. Charge conversion gain is critical for analog power consumption and therefore for material budget in tracking applications, and also has direct system impact. This paper presents a novel source-drain follower (SDF), where both source and drain follow the gate potential improving charge conversion gain. For the inner tracking system (ITS) upgrade of the ALICE experiment at CERN, low material budget is a primary requirement. The SDF circuit was studied as part of the effort to optimize the effective capacitance of the sensing node. The collection electrode, input transistor and routing metal all contribute to Ceff. Reverse sensor bias reduces the collection electrode capacitance. The novel SDF circuit eliminates the contribution of the input transistor to Ceff, reduces the routing contribution if additional shielding is introduced, provides a way to estimate the capacitance of the sensor itself, and has a voltage gain closer to unity than the standard SF. The SDF circuit has a somewhat larger area with a somewhat smaller bandwidth, but this is acceptable in most cases. A test chip, manufactured in a 180 nm CMOS image sensor process, implements small prototype pixel matrices in different flavors to compare the standard SF to the novel SF and to the novel SF with additional shielding. The effective sensing node capacitance was measured using a 55Fe source. Increasing reverse substrate bias from -1 V to -6 V reduces Ceff by 38% and the equivalent noise charge (ENC) by 22% for the standard SF. The SDF provides a further 9% improvement for Ceff and 25% for ENC. The SDF circuit with additional shielding provides 18% improvement for Ceff, and combined with -6 V reverse bias yields almost a factor 2.

1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

PubMed

Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

2015-04-01

Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

PubMed

Jungmann, Julia H; Heeren, Ron M A

2013-01-15

Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. Copyright © 2012 John Wiley & Sons, Ltd.

LSA SAF Meteosat FRP Products: Part 2 - Evaluation and demonstration of use in the Copernicus Atmosphere Monitoring Service (CAMS)

NASA Astrophysics Data System (ADS)

Roberts, G.; Wooster, M. J.; Xu, W.; Freeborn, P. H.; Morcrette, J.-J.; Jones, L.; Benedetti, A.; Kaiser, J.

2015-06-01

Characterising the dynamics of landscape scale wildfires at very high temporal resolutions is best achieved using observations from Earth Observation (EO) sensors mounted onboard geostationary satellites. As a result, a number of operational active fire products have been developed from the data of such sensors. An example of which are the Fire Radiative Power (FRP) products, the FRP-PIXEL and FRP-GRID products, generated by the Land Surface Analysis Satellite Applications Facility (LSA SAF) from imagery collected by the Spinning Enhanced Visible and Infrared Imager (SEVIRI) on-board the Meteosat Second Generation (MSG) series of geostationary EO satellites. The processing chain developed to deliver these FRP products detects SEVIRI pixels containing actively burning fires and characterises their FRP output across four geographic regions covering Europe, part of South America and northern and southern Africa. The FRP-PIXEL product contains the highest spatial and temporal resolution FRP dataset, whilst the FRP-GRID product contains a spatio-temporal summary that includes bias adjustments for cloud cover and the non-detection of low FRP fire pixels. Here we evaluate these two products against active fire data collected by the Moderate Resolution Imaging Spectroradiometer (MODIS), and compare the results to those for three alternative active fire products derived from SEVIRI imagery. The FRP-PIXEL product is shown to detect a substantially greater number of active fire pixels than do alternative SEVIRI-based products, and comparison to MODIS on a per-fire basis indicates a strong agreement and low bias in terms of FRP values. However, low FRP fire pixels remain undetected by SEVIRI, with errors of active fire pixel detection commission and omission compared to MODIS ranging between 9-13 and 65-77% respectively in Africa. Higher errors of omission result in greater underestimation of regional FRP totals relative to those derived from simultaneously collected MODIS data, ranging from 35% over the Northern Africa region to 89% over the European region. High errors of active fire omission and FRP underestimation are found over Europe and South America, and result from SEVIRI's larger pixel area over these regions. An advantage of using FRP for characterising wildfire emissions is the ability to do so very frequently and in near real time (NRT). To illustrate the potential of this approach, wildfire fuel consumption rates derived from the SEVIRI FRP-PIXEL product are used to characterise smoke emissions of the 2007 Peloponnese wildfires within the European Centre for Medium-Range Weather Forecasting (ECMWF) Integrated Forecasting System (IFS), as a demonstration of what can be achieved when using geostationary active fire data within the Copernicus Atmosphere Monitoring System (CAMS). Qualitative comparison of the modelled smoke plumes with MODIS optical imagery illustrates that the model captures the temporal and spatial dynamics of the plume very well, and that high temporal resolution emissions estimates such as those available from geostationary orbit are important for capturing the sub-daily variability in smoke plume parameters such as aerosol optical depth (AOD), which are increasingly less well resolved using daily or coarser temporal resolution emissions datasets. Quantitative comparison of modelled AOD with coincident MODIS and AERONET AOD indicates that the former is overestimated by ∼ 20-30%, but captures the observed AOD dynamics with a high degree of fidelity. The case study highlights the potential of using geostationary FRP data to drive fire emissions estimates for use within atmospheric transport models such as those currently implemented as part of the Monitoring Atmospheric Composition and Climate (MACC) programme within the CAMS.

A digital pixel cell for address event representation image convolution processing

NASA Astrophysics Data System (ADS)

Camunas-Mesa, Luis; Acosta-Jimenez, Antonio; Serrano-Gotarredona, Teresa; Linares-Barranco, Bernabe

2005-06-01

Address Event Representation (AER) is an emergent neuromorphic interchip communication protocol that allows for real-time virtual massive connectivity between huge number of neurons located on different chips. By exploiting high speed digital communication circuits (with nano-seconds timings), synaptic neural connections can be time multiplexed, while neural activity signals (with mili-seconds timings) are sampled at low frequencies. Also, neurons generate events according to their information levels. Neurons with more information (activity, derivative of activities, contrast, motion, edges,...) generate more events per unit time, and access the interchip communication channel more frequently, while neurons with low activity consume less communication bandwidth. AER technology has been used and reported for the implementation of various type of image sensors or retinae: luminance with local agc, contrast retinae, motion retinae,... Also, there has been a proposal for realizing programmable kernel image convolution chips. Such convolution chips would contain an array of pixels that perform weighted addition of events. Once a pixel has added sufficient event contributions to reach a fixed threshold, the pixel fires an event, which is then routed out of the chip for further processing. Such convolution chips have been proposed to be implemented using pulsed current mode mixed analog and digital circuit techniques. In this paper we present a fully digital pixel implementation to perform the weighted additions and fire the events. This way, for a given technology, there is a fully digital implementation reference against which compare the mixed signal implementations. We have designed, implemented and tested a fully digital AER convolution pixel. This pixel will be used to implement a full AER convolution chip for programmable kernel image convolution processing.

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Performance of CMOS imager as sensing element for a Real-time Active Pixel Dosimeter for Interventional Radiology procedures

NASA Astrophysics Data System (ADS)

Magalotti, D.; Bissi, L.; Conti, E.; Paolucci, M.; Placidi, P.; Scorzoni, A.; Servoli, L.

2014-01-01

Staff members applying Interventional Radiology procedures are exposed to ionizing radiation, which can induce detrimental effects to the human body, and requires an improvement of radiation protection. This paper is focused on the study of the sensor element for a wireless real-time dosimeter to be worn by the medical staff during the interventional radiology procedures, in the framework of the Real-Time Active PIxel Dosimetry (RAPID) INFN project. We characterize a CMOS imager to be used as detection element for the photons scattered by the patient body. The CMOS imager has been first characterized in laboratory using fluorescence X-ray sources, then a PMMA phantom has been used to diffuse the X-ray photons from an angiography system. Different operating conditions have been used to test the detector response in realistic situations, by varying the X-ray tube parameters (continuous/pulsed mode, tube voltage and current, pulse parameters), the sensor parameters (gain, integration time) and the relative distance between sensor and phantom. The sensor response has been compared with measurements performed using passive dosimeters (TLD) and also with a certified beam, in an accredited calibration centre, in order to obtain an absolute calibration. The results are very encouraging, with dose and dose rate measurement uncertainties below the 10% level even for the most demanding Interventional Radiology protocols.

Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

New concept of a submillimetric pixellated Silicon detector for intracerebral application

NASA Astrophysics Data System (ADS)

Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

2011-12-01

A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications

NASA Astrophysics Data System (ADS)

Ponchut, C.; Cotte, M.; Lozinskaya, A.; Zarubin, A.; Tolbanov, O.; Tyazhev, A.

2017-12-01

In order to meet the needs of some ESRF beamlines for highly efficient 2D X-ray detectors in the 20-50 keV range, GaAs:Cr pixel sensors coupled to TIMEPIX readout chips were implemented into a MAXIPIX detector. Use of GaAs:Cr sensor material is intended to overcome the limitations of Si (low absorption) and of CdTe (fluorescence) in this energy range The GaAs:Cr sensor assemblies were characterised with both laboratory X-ray sources and monochromatic synchrotron X-ray beams. The sensor response as a function of bias voltage was compared to a theoretical model, leading to an estimation of the μτ product of electrons in GaAs:Cr sensor material of 1.6×10-4 cm2/V. The spatial homogeneity of X-ray images obtained with the sensors was measured in different irradiation conditions, showing a particular sensitivity to small variations in the incident beam spectrum. 2D-resolved elemental mapping of the sensor surface was carried out to investigate a possible relation between the noise pattern observed in X-ray images and local fluctuations in chemical composition. A scanning of the sensor response at subpixel scale revealed that these irregularities can be correlated with a distortion of the effective pixel shapes.

Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

NASA Astrophysics Data System (ADS)

Ceresa, D.; Marchioro, A.; Kloukinas, K.; Kaplon, J.; Bialas, W.; Re, V.; Traversi, G.; Gaioni, L.; Ratti, L.

2014-11-01

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

Crosstalk quantification, analysis, and trends in CMOS image sensors.

PubMed

Blockstein, Lior; Yadid-Pecht, Orly

2010-08-20

Pixel crosstalk (CTK) consists of three components, optical CTK (OCTK), electrical CTK (ECTK), and spectral CTK (SCTK). The CTK has been classified into two groups: pixel-architecture dependent and pixel-architecture independent. The pixel-architecture-dependent CTK (PADC) consists of the sum of two CTK components, i.e., the OCTK and the ECTK. This work presents a short summary of a large variety of methods for PADC reduction. Following that, this work suggests a clear quantifiable definition of PADC. Three complementary metal-oxide-semiconductor (CMOS) image sensors based on different technologies were empirically measured, using a unique scanning technology, the S-cube. The PADC is analyzed, and technology trends are shown.

Evaluating video digitizer errors

NASA Astrophysics Data System (ADS)

Peterson, C.

2016-01-01

Analog output video cameras remain popular for recording meteor data. Although these cameras uniformly employ electronic detectors with fixed pixel arrays, the digitization process requires resampling the horizontal lines as they are output in order to reconstruct the pixel data, usually resulting in a new data array of different horizontal dimensions than the native sensor. Pixel timing is not provided by the camera, and must be reconstructed based on line sync information embedded in the analog video signal. Using a technique based on hot pixels, I present evidence that jitter, sync detection, and other timing errors introduce both position and intensity errors which are not present in cameras which internally digitize their sensors and output the digital data directly.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

PubMed Central

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-01-01

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed. PMID:29206162

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

NASA Astrophysics Data System (ADS)

Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

2017-12-01

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

Comparison of Huanjing and Landsat satellite remote sensing of the spatial heterogeneity of Qinghai-Tibet alpine grassland

NASA Astrophysics Data System (ADS)

Wang, Junbang; Sun, Wenyi

2014-11-01

Remote sensing is widely applied in the study of terrestrial primary production and the global carbon cycle. The researches on the spatial heterogeneity in images with different sensors and resolutions would improve the application of remote sensing. In this study two sites on alpine meadow grassland in Qinghai, China, which have distinct fractal vegetation cover, were used to test and analyze differences between Normalized Difference Vegetation Index (NDVI) and enhanced vegetation index (EVI) derived from the Huanjing (HJ) and Landsat Thematic Mapper (TM) sensors. The results showed that: 1) NDVI estimated from HJ were smaller than the corresponding values from TM at the two sites whereas EVI were almost the same for the two sensors. 2) The overall variance represented by HJ data was consistently about half of that of Landsat TM although their nominal pixel size is approximately 30m for both sensors. The overall variance from EVI is greater than that from NDVI. The difference of the range between the two sensors is about 6 pixels at 30m resolution. The difference of the range in which there is not more corrective between two vegetation indices is about 1 pixel. 3) The sill decreased when pixel size increased from 30m to 1km, and then decreased very quickly when pixel size is changed to 250m from 30m or 90m but slowly when changed from 250m to 500m. HJ can capture this spatial heterogeneity to some extent and this study provides foundations for the use of the sensor for validation of net primary productivity estimates obtained from ecosystem process models.

Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

PubMed

Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

2013-06-01

We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

A Test Stand to Characterize and Contribute to the Development of DEPFET X-ray Detectors

NASA Astrophysics Data System (ADS)

Falcone, Abe

The field of X-ray astronomy is currently looking forward to several new missions (e.g Athena, BeppiColumbo, and IXPE which is a new SMEX polarimeter), and there is the possibility of a flag-ship mission (e.g. the Lynx X-ray Surveyor) and/or other SMEX through probe class missions in the long-term future with many mission concepts being developed (e.g. ARCUS). The X-ray detec-tors for these future missions must be developed to suitable maturity to be proposed for flight, and expertise operating the newest versions of the detectors must be acquired by potential mis-sion designers and proposers. There are several silicon X-ray imaging active pixel sensor (APS) detectors being developed at this time (hybrid CMOS, monolithic CMOS, and DEPFETs), and each of these have their own advantages and levels of maturity, while they all provide enhanced radia-tion hardness, lower power operation, and versatile readout modes. Of the new APS X-ray detec-tors being developed, the DEPleted p-channel Field Effect Transistors (DEPFETs) have exhibited the best noise performance to-date. While they do require larger pixel structures than their com-petitors, the low noise performance of these detectors makes them an excellent choice for many mission applications (e.g. they will be launched on 2 ESA missions, Athena & BepiColumbo), and their further development could benefit other missions, particularly future missions that might be led by NASA and US scientists. Up until now, the development of these detectors has been lim-ited to only two groups located in Germany; one group is at Max Planck Institute and the other is PNSensors which is comprised of engineers and scientists that previously led the DEPFET design work at Max Planck. We propose to engage one of these groups in order to: (a) acquire newly de-signed test DEPFET detectors built by PNSensor, through a very-low-cost arrangement, (b) build a test stand that can operate these detectors and gain valuable experience running them in vari-ous modes with variations on the detector settings, (c) characterize the DEPFETs independently of the manufacturer and in modes that are relevant to our x-ray applications, and (d) use this new operation experience and characterization data to inform the next design iterations and the op-timization of DEPFET detectors for future X-ray missions.

Smart CMOS image sensor for lightning detection and imaging.

PubMed

Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

2013-03-01

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

Privacy-preserved behavior analysis and fall detection by an infrared ceiling sensor network.

PubMed

Tao, Shuai; Kudo, Mineichi; Nonaka, Hidetoshi

2012-12-07

An infrared ceiling sensor network system is reported in this study to realize behavior analysis and fall detection of a single person in the home environment. The sensors output multiple binary sequences from which we know the existence/non-existence of persons under the sensors. The short duration averages of the binary responses are shown to be able to be regarded as pixel values of a top-view camera, but more advantageous in the sense of preserving privacy. Using the "pixel values" as features, support vector machine classifiers succeeded in recognizing eight activities (walking, reading, etc.) performed by five subjects at an average recognition rate of 80.65%. In addition, we proposed a martingale framework for detecting falls in this system. The experimental results showed that we attained the best performance of 95.14% (F1 value), the FAR of 7.5% and the FRR of 2.0%. This accuracy is not sufficient in general but surprisingly high with such low-level information. In summary, it is shown that this system has the potential to be used in the home environment to provide personalized services and to detect abnormalities of elders who live alone.

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

Extraction of incident irradiance from LWIR hyperspectral imagery

NASA Astrophysics Data System (ADS)

Lahaie, Pierre

2014-10-01

The atmospheric correction of thermal hyperspectral imagery can be separated in two distinct processes: Atmospheric Compensation (AC) and Temperature and Emissivity separation (TES). TES requires for input at each pixel, the ground leaving radiance and the atmospheric downwelling irradiance, which are the outputs of the AC process. The extraction from imagery of the downwelling irradiance requires assumptions about some of the pixels' nature, the sensor and the atmosphere. Another difficulty is that, often the sensor's spectral response is not well characterized. To deal with this unknown, we defined a spectral mean operator that is used to filter the ground leaving radiance and a computation of the downwelling irradiance from MODTRAN. A user will select a number of pixels in the image for which the emissivity is assumed to be known. The emissivity of these pixels is assumed to be smooth and that the only spectrally fast varying variable in the downwelling irradiance. Using these assumptions we built an algorithm to estimate the downwelling irradiance. The algorithm is used on all the selected pixels. The estimated irradiance is the average on the spectral channels of the resulting computation. The algorithm performs well in simulation and results are shown for errors in the assumed emissivity and for errors in the atmospheric profiles. The sensor noise influences mainly the required number of pixels.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

Molecular imaging of in vivo calcium ion expression in area postrema of total sleep deprived rats: Implications for cardiovascular regulation by TOF-SIMS analysis

NASA Astrophysics Data System (ADS)

Mai, Fu-Der; Chen, Li-You; Ling, Yong-Chien; Chen, Bo-Jung; Wu, Un-In; Chang, Hung-Ming

2010-05-01

Excessive calcium influx in chemosensitive neurons of area postrema (AP) is detrimental for sympathetic activation and participates in the disruption of cardiovascular activities. Since total sleep deprivation (TSD) is a stressful condition known to harm the cardiovascular function, the present study is aimed to determine whether the in vivo calcium expression in AP would significantly alter following TSD by the use of time-of-flight secondary ion mass spectrometry (TOF-SIMS) and calretinin (a specific calcium sensor protein in AP neurons) immunohistochemistry. The results indicated that in normal rats, the calcium intensity was estimated to be 0.5 × 10 5 at m/ z 40.08. However, following TSD, the intensity for calcium ions was greatly increased to 1.2 × 10 5. Molecular imaging revealed that after TSD, various strongly expressed calcium signals were distributed throughout AP with clear identified profiles instead of randomly scattered within this region in normal rats. Immunohistochemical staining corresponded well with ionic image in which a majority of calcium-enriched gathering co-localized with calretinin positive neurons. The functional significance of TSD-induced calcium augmentation was demonstrated by increased heart rate and mean arterial pressure, clinical markers for cardiovascular dysfunction. Considering AP-mediated sympathetic activation is important for cardiovascular regulation, exaggerated calcium influx in AP would render this neurocircuitry more vulnerable to over-excitation, which might serve as the underlying mechanism for the development of TSD-relevant cardiovascular deficiency.

A new concept for a cryogenic amplifier stage

NASA Astrophysics Data System (ADS)

Fedl, V.; Barl, L.; Lutz, G.; Richter, R.; Strüder, L.

2010-12-01

The observation of astrophysical objects in the mid-infrared requires Blocked Impurity Band (BIB) detectors based on n-doped Silicon. It is desirable to observe faint astronomical objects with such a detector, which can be achieved with a high signal to noise ratio. These detectors operate at a temperature range from 6 to 12 K. We foresee a new detector concept for the readout of the generated signal charge. Our aim is to implement a Depleted P-channel Field Effect Transistor (DEPFET) Active Pixel Sensor (APS) on the BIB detector in order to have a high sensitivity. We successfully operated the DEPFET under cryogenic conditions and investigated the reset mechanism of the collected signal charge. We identified uncomplete clear with freeze-out of the signal charge into ionized shallow donor states in the heavily doped internal Gate of the DEPFET due to low thermal energy. Therefore, we found a solution to emit these localized signal charges into the conduction band in order to ensure the transport from the internal Gate to the Clear contact. It is possible to apply electric fields higher than 17 kV/cm at the position of the collected signal charge to emit the electrons from the shallow donor states. The electric field enhanced emission is equivalent to the tunneling effect.

Polarization-Analyzing CMOS Image Sensor With Monolithically Embedded Polarizer for Microchemistry Systems.

PubMed

Tokuda, T; Yamada, H; Sasagawa, K; Ohta, J

2009-10-01

This paper proposes and demonstrates a polarization-analyzing CMOS sensor based on image sensor architecture. The sensor was designed targeting applications for chiral analysis in a microchemistry system. The sensor features a monolithically embedded polarizer. Embedded polarizers with different angles were implemented to realize a real-time absolute measurement of the incident polarization angle. Although the pixel-level performance was confirmed to be limited, estimation schemes based on the variation of the polarizer angle provided a promising performance for real-time polarization measurements. An estimation scheme using 180 pixels in a 1deg step provided an estimation accuracy of 0.04deg. Polarimetric measurements of chiral solutions were also successfully performed to demonstrate the applicability of the sensor to optical chiral analysis.

AP-1 proteins in the adult brain: facts and fiction about effectors of neuroprotection and neurodegeneration.

PubMed

Herdegen, T; Waetzig, V

2001-04-30

Jun and Fos proteins are induced and activated following most physiological and pathophysiological stimuli in the brain. Only few data allow conclusions about distinct functions of AP-1 proteins in neurodegeneration and neuroregeneration, and these functions mainly refer to c-Jun and its activation by JNKs. Apoptotic functions of activated c-Jun affect hippocampal, nigral and primary cultured neurons following excitotoxic stimulation and destruction of the neuron-target-axis including withdrawal of trophic molecules. The inhibition of JNKs might exert neuroprotection by subsequent omission of c-Jun activation. Besides endogenous neuronal functions, the c-Jun/AP-1 proteins can damage the nervous system by upregulation of harmful programs in non-neuronal cells (e.g. microglia) with release of neurodegenerative molecules. In contrast, the differentiation with neurite extension and maturation of neural cells in vitro indicate physiological and potentially neuroprotective functions of c-Jun and JNKs including sensoring for alterations in the cytoskeleton. This review summarizes the multiple molecular interfunctions which are involved in the shift from the physiological role to degenerative effects of the Jun/JNK-axis such as cell type-specific expression and intracellular localization of scaffold proteins and upstream activators, antagonistic phosphatases, interaction with other kinase systems, or the activation of transcription factors competing for binding to JNK proteins and AP-1 DNA elements.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

NASA Astrophysics Data System (ADS)

Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

2012-10-01

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

NASA Technical Reports Server (NTRS)

Chervenak, James

2012-01-01

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

Dual cameras acquisition and display system of retina-like sensor camera and rectangular sensor camera

NASA Astrophysics Data System (ADS)

Cao, Nan; Cao, Fengmei; Lin, Yabin; Bai, Tingzhu; Song, Shengyu

2015-04-01

For a new kind of retina-like senor camera and a traditional rectangular sensor camera, dual cameras acquisition and display system need to be built. We introduce the principle and the development of retina-like senor. Image coordinates transformation and interpolation based on sub-pixel interpolation need to be realized for our retina-like sensor's special pixels distribution. The hardware platform is composed of retina-like senor camera, rectangular sensor camera, image grabber and PC. Combined the MIL and OpenCV library, the software program is composed in VC++ on VS 2010. Experience results show that the system can realizes two cameras' acquisition and display.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

High dynamic range vision sensor for automotive applications

NASA Astrophysics Data System (ADS)

Grenet, Eric; Gyger, Steve; Heim, Pascal; Heitger, Friedrich; Kaess, Francois; Nussbaum, Pascal; Ruedi, Pierre-Francois

2005-02-01

A 128 x 128 pixels, 120 dB vision sensor extracting at the pixel level the contrast magnitude and direction of local image features is used to implement a lane tracking system. The contrast representation (relative change of illumination) delivered by the sensor is independent of the illumination level. Together with the high dynamic range of the sensor, it ensures a very stable image feature representation even with high spatial and temporal inhomogeneities of the illumination. Dispatching off chip image feature is done according to the contrast magnitude, prioritizing features with high contrast magnitude. This allows to reduce drastically the amount of data transmitted out of the chip, hence the processing power required for subsequent processing stages. To compensate for the low fill factor (9%) of the sensor, micro-lenses have been deposited which increase the sensitivity by a factor of 5, corresponding to an equivalent of 2000 ASA. An algorithm exploiting the contrast representation output by the vision sensor has been developed to estimate the position of a vehicle relative to the road markings. The algorithm first detects the road markings based on the contrast direction map. Then, it performs quadratic fits on selected kernel of 3 by 3 pixels to achieve sub-pixel accuracy on the estimation of the lane marking positions. The resulting precision on the estimation of the vehicle lateral position is 1 cm. The algorithm performs efficiently under a wide variety of environmental conditions, including night and rainy conditions.

Detailed measurements of shower properties in a high granularity digital electromagnetic calorimeter

NASA Astrophysics Data System (ADS)

van der Kolk, N.

2018-03-01

The MAPS (Monolithic Active Pixel Sensors) prototype of the proposed ALICE Forward Calorimeter (FoCal) is the highest granularity electromagnetic calorimeter, with 39 million pixels with a size of 30 × 30 μm2. Particle showers can be studied with unprecedented detail with this prototype. Electromagnetic showers at energies between 2 GeV and 244 GeV have been studied and compared with GEANT4 simulations. Simulation models can be tested in more detail than ever before and the differences observed between FoCal data and GEANT4 simulations illustrate that improvements in electromagnetic models are still possible.

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

PIXELS: Using field-based learning to investigate students' concepts of pixels and sense of scale

NASA Astrophysics Data System (ADS)

Pope, A.; Tinigin, L.; Petcovic, H. L.; Ormand, C. J.; LaDue, N.

2015-12-01

Empirical work over the past decade supports the notion that a high level of spatial thinking skill is critical to success in the geosciences. Spatial thinking incorporates a host of sub-skills such as mentally rotating an object, imagining the inside of a 3D object based on outside patterns, unfolding a landscape, and disembedding critical patterns from background noise. In this study, we focus on sense of scale, which refers to how an individual quantified space, and is thought to develop through kinesthetic experiences. Remote sensing data are increasingly being used for wide-reaching and high impact research. A sense of scale is critical to many areas of the geosciences, including understanding and interpreting remotely sensed imagery. In this exploratory study, students (N=17) attending the Juneau Icefield Research Program participated in a 3-hour exercise designed to study how a field-based activity might impact their sense of scale and their conceptions of pixels in remotely sensed imagery. Prior to the activity, students had an introductory remote sensing lecture and completed the Sense of Scale inventory. Students walked and/or skied the perimeter of several pixel types, including a 1 m square (representing a WorldView sensor's pixel), a 30 m square (a Landsat pixel) and a 500 m square (a MODIS pixel). The group took reflectance measurements using a field radiometer as they physically traced out the pixel. The exercise was repeated in two different areas, one with homogenous reflectance, and another with heterogeneous reflectance. After the exercise, students again completed the Sense of Scale instrument and a demographic survey. This presentation will share the effects and efficacy of the field-based intervention to teach remote sensing concepts and to investigate potential relationships between students' concepts of pixels and sense of scale.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

Mechanistic Basis for Type 2 Long QT Syndrome Caused by KCNH2 Mutations that Disrupt Conserved Arginine Residue in the Voltage Sensor

PubMed Central

McBride, Christie M.; Smith, Ashley M.; Smith, Jennifer L.; Reloj, Allison R.; Velasco, Ellyn J.; Powell, Jonathan; Elayi, Claude S.; Bartos, Daniel C.; Burgess, Don E.

2013-01-01

KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (IKr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing IKr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (IKv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients’ genotypes) mostly corrected the changes in IKv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing IKr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease IKr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient. PMID:23546015

Mechanistic basis for type 2 long QT syndrome caused by KCNH2 mutations that disrupt conserved arginine residues in the voltage sensor.

PubMed

McBride, Christie M; Smith, Ashley M; Smith, Jennifer L; Reloj, Allison R; Velasco, Ellyn J; Powell, Jonathan; Elayi, Claude S; Bartos, Daniel C; Burgess, Don E; Delisle, Brian P

2013-05-01

KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (I Kr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing I Kr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (I Kv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients' genotypes) mostly corrected the changes in I Kv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing I Kr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease I Kr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.

Review of the Probable Maximum Flood (PMF) Snowmelt Analysis for Success Dam

DTIC Science & Technology

2015-11-01

118.53994 36.11754 7200 1981–2014 CA Dept. of Water Resources EGL Eagle Creek Air Temp. Hourly −118.641 35.983 6700 1995–2009 USACE HSS Hossack Air...is in the form of “tiles” with each tile ap- proximately 1200 × 1200 km in area and containing approximately 2400 × 2400 pixels. Each pixel is...District, U.S. Army Corps of Engineers. REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188 Public reporting burden for this collection of

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

NASA Astrophysics Data System (ADS)

Pernegger, H.; Bates, R.; Buttar, C.; Dalla, M.; van Hoorne, J. W.; Kugathasan, T.; Maneuski, D.; Musa, L.; Riedler, P.; Riegel, C.; Sbarra, C.; Schaefer, D.; Schioppa, E. J.; Snoeys, W.

2017-06-01

The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

Adaptive control of artificial pancreas systems - a review.

PubMed

Turksoy, Kamuran; Cinar, Ali

2014-01-01

Artificial pancreas (AP) systems offer an important improvement in regulating blood glucose concentration for patients with type 1 diabetes, compared to current approaches. AP consists of sensors, control algorithms and an insulin pump. Different AP control algorithms such as proportional-integral-derivative, model-predictive control, adaptive control, and fuzzy logic control have been investigated in simulation and clinical studies in the past three decades. The variability over time and complexity of the dynamics of blood glucose concentration, unsteady disturbances such as meals, time-varying delays on measurements and insulin infusion, and noisy data from sensors create a challenging system to AP. Adaptive control is a powerful control technique that can deal with such challenges. In this paper, a review of adaptive control techniques for blood glucose regulation with an AP system is presented. The investigations and advances in technology produced impressive results, but there is still a need for a reliable AP system that is both commercially viable and appealing to patients with type 1 diabetes.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Degerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Hügging, F.; Marin Tobon, C. A.; Moustakas, K.; Pangaud, P.; Schwemling, P.; Pernegger, H.; Pohl, D.-L.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.

2018-03-01

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.

Single chip camera active pixel sensor

NASA Technical Reports Server (NTRS)

Shaw, Timothy (Inventor); Pain, Bedabrata (Inventor); Olson, Brita (Inventor); Nixon, Robert H. (Inventor); Fossum, Eric R. (Inventor); Panicacci, Roger A. (Inventor); Mansoorian, Barmak (Inventor)

2003-01-01

A totally digital single chip camera includes communications to operate most of its structure in serial communication mode. The digital single chip camera include a D/A converter for converting an input digital word into an analog reference signal. The chip includes all of the necessary circuitry for operating the chip using a single pin.

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering

PubMed Central

Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro

2017-01-01

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system. PMID:29120358

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that formmore » when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

PubMed

Mars, Kamel; Lioe, De Xing; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

2017-11-09

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

Laser doppler blood flow imaging using a CMOS imaging sensor with on-chip signal processing.

PubMed

He, Diwei; Nguyen, Hoang C; Hayes-Gill, Barrie R; Zhu, Yiqun; Crowe, John A; Gill, Cally; Clough, Geraldine F; Morgan, Stephen P

2013-09-18

The first fully integrated 2D CMOS imaging sensor with on-chip signal processing for applications in laser Doppler blood flow (LDBF) imaging has been designed and tested. To obtain a space efficient design over 64 × 64 pixels means that standard processing electronics used off-chip cannot be implemented. Therefore the analog signal processing at each pixel is a tailored design for LDBF signals with balanced optimization for signal-to-noise ratio and silicon area. This custom made sensor offers key advantages over conventional sensors, viz. the analog signal processing at the pixel level carries out signal normalization; the AC amplification in combination with an anti-aliasing filter allows analog-to-digital conversion with a low number of bits; low resource implementation of the digital processor enables on-chip processing and the data bottleneck that exists between the detector and processing electronics has been overcome. The sensor demonstrates good agreement with simulation at each design stage. The measured optical performance of the sensor is demonstrated using modulated light signals and in vivo blood flow experiments. Images showing blood flow changes with arterial occlusion and an inflammatory response to a histamine skin-prick demonstrate that the sensor array is capable of detecting blood flow signals from tissue.

Toward one Giga frames per second--evolution of in situ storage image sensors.

PubMed

Etoh, Takeharu G; Son, Dao V T; Yamada, Tetsuo; Charbon, Edoardo

2013-04-08

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named "Tetratified structure". By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.

Remote sensing of Alaskan boreal forest fires at the pixel and sub-pixel level: multi-sensor approaches and sensitivity analysis

NASA Astrophysics Data System (ADS)

Waigl, C.; Stuefer, M.; Prakash, A.

2013-12-01

Wildfire is the main disturbance regime of the boreal forest ecosystem, a region acutely sensitive to climate change. Large fires impact the carbon cycle, permafrost, and air quality on a regional and even hemispheric scale. Because of their significance as a hazard to human health and economic activity, monitoring wildfires is relevant not only to science but also to government agencies. The goal of this study is to develop pathways towards a near real-time assessment of fire characteristics in the boreal zones of Alaska based on satellite remote sensing data. We map the location of active burn areas and derive fire parameters such as fire temperature, intensity, stage (smoldering or flaming), emission injection points, carbon consumed, and energy released. For monitoring wildfires in the sub-arctic region, we benefit from the high temporal resolution of data (as high as 8 images a day) from MODIS on the Aqua and Terra platforms and VIIRS on NPP/Suomi, downlinked and processed to level 1 by the Geographic Information Network of Alaska at the University of Alaska Fairbanks. To transcend the low spatial resolution of these sensors, a sub-pixel analysis is carried out. By applying techniques from Bayesian inverse modeling to Dozier's two-component approach, uncertainties and sensitivity of the retrieved fire temperatures and fractional pixel areas to background temperature and atmospheric factors are assessed. A set of test cases - large fires from the 2004 to 2013 fire seasons complemented by a selection of smaller burns at the lower end of the MODIS detection threshold - is used to evaluate the methodology. While the VIIRS principal fire detection band M13 (centered at 4.05 μm, similar to MODIS bands 21 and 22 at 3.959 μm) does not usually saturate for Alaskan wildfire areas, the thermal IR band M15 (10.763 μm, comparable to MODIS band 31 at 11.03 μm) indeed saturates for a percentage, though not all, of the fire pixels of intense burns. As this limits the application of the classical version of Dozier's model for this particular combination to lower intensity and smaller fires, or smaller fractional fire areas, other VIIRS band combinations are evaluated as well. Furthermore, the higher spatial resolution of the VIIRS sensor compared to MODIS and its constant along-scan resolution DNB (day/night band) dataset provide additional options for fire mapping, detection and quantification. Higher spatial resolution satellite-borne remote sensing data is used to validate the pixel and sub-pixel level analysis and to assess lower detection thresholds. For each sample fire, moderate-resolution imagery is paired with data from the ASTER instrument (simultaneous with MODIS data on the Terra platform) and/or Landsat scenes acquired in close temporal proximity. To complement the satellite-borne imagery, aerial surveys using a FLIR thermal imaging camera with a broadband TIR sensor provide additional ground truthing and a validation of fire location and background temperature.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

FITPix COMBO—Timepix detector with integrated analog signal spectrometric readout

NASA Astrophysics Data System (ADS)

Holik, M.; Kraus, V.; Georgiev, V.; Granja, C.

2016-02-01

The hybrid semiconductor pixel detector Timepix has proven a powerful tool in radiation detection and imaging. Energy loss and directional sensitivity as well as particle type resolving power are possible by high resolution particle tracking and per-pixel energy and quantum-counting capability. The spectrometric resolving power of the detector can be further enhanced by analyzing the analog signal of the detector common sensor electrode (also called back-side pulse). In this work we present a new compact readout interface, based on the FITPix readout architecture, extended with integrated analog electronics for the detector's common sensor signal. Integrating simultaneous operation of the digital per-pixel information with the common sensor (called also back-side electrode) analog pulse processing circuitry into one device enhances the detector capabilities and opens new applications. Thanks to noise suppression and built-in electromagnetic interference shielding the common hardware platform enables parallel analog signal spectroscopy on the back side pulse signal with full operation and read-out of the pixelated digital part, the noise level is 600 keV and spectrometric resolution around 100 keV for 5.5 MeV alpha particles. Self-triggering is implemented with delay of few tens of ns making use of adjustable low-energy threshold of the particle analog signal amplitude. The digital pixelated full frame can be thus triggered and recorded together with the common sensor analog signal. The waveform, which is sampled with frequency 100 MHz, can be recorded in adjustable time window including time prior to the trigger level. An integrated software tool provides control, on-line display and read-out of both analog and digital channels. Both the pixelated digital record and the analog waveform are synchronized and written out by common time stamp.

High speed wide field CMOS camera for Transneptunian Automatic Occultation Survey

NASA Astrophysics Data System (ADS)

Wang, Shiang-Yu; Geary, John C.; Amato, Stephen M.; Hu, Yen-Sang; Ling, Hung-Hsu; Huang, Pin-Jie; Furesz, Gabor; Chen, Hsin-Yo; Chang, Yin-Chang; Szentgyorgyi, Andrew; Lehner, Matthew; Norton, Timothy

2014-08-01

The Transneptunian Automated Occultation Survey (TAOS II) is a three robotic telescope project to detect the stellar occultation events generated by Trans Neptunian Objects (TNOs). TAOS II project aims to monitor about 10000 stars simultaneously at 20Hz to enable statistically significant event rate. The TAOS II camera is designed to cover the 1.7 degree diameter field of view (FoV) of the 1.3m telescope with 10 mosaic 4.5kx2k CMOS sensors. The new CMOS sensor has a back illumination thinned structure and high sensitivity to provide similar performance to that of the backillumination thinned CCDs. The sensor provides two parallel and eight serial decoders so the region of interests can be addressed and read out separately through different output channels efficiently. The pixel scale is about 0.6"/pix with the 16μm pixels. The sensors, mounted on a single Invar plate, are cooled to the operation temperature of about 200K by a cryogenic cooler. The Invar plate is connected to the dewar body through a supporting ring with three G10 bipods. The deformation of the cold plate is less than 10μm to ensure the sensor surface is always within ±40μm of focus range. The control electronics consists of analog part and a Xilinx FPGA based digital circuit. For each field star, 8×8 pixels box will be readout. The pixel rate for each channel is about 1Mpix/s and the total pixel rate for each camera is about 80Mpix/s. The FPGA module will calculate the total flux and also the centroid coordinates for every field star in each exposure.

A real-time photogrammetric algorithm for sensor and synthetic image fusion with application to aviation combined vision

NASA Astrophysics Data System (ADS)

Lebedev, M. A.; Stepaniants, D. G.; Komarov, D. V.; Vygolov, O. V.; Vizilter, Yu. V.; Zheltov, S. Yu.

2014-08-01

The paper addresses a promising visualization concept related to combination of sensor and synthetic images in order to enhance situation awareness of a pilot during an aircraft landing. A real-time algorithm for a fusion of a sensor image, acquired by an onboard camera, and a synthetic 3D image of the external view, generated in an onboard computer, is proposed. The pixel correspondence between the sensor and the synthetic images is obtained by an exterior orientation of a "virtual" camera using runway points as a geospatial reference. The runway points are detected by the Projective Hough Transform, which idea is to project the edge map onto a horizontal plane in the object space (the runway plane) and then to calculate intensity projections of edge pixels on different directions of intensity gradient. The performed experiments on simulated images show that on a base glide path the algorithm provides image fusion with pixel accuracy, even in the case of significant navigation errors.

Further applications for mosaic pixel FPA technology

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.

2011-06-01

In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

Timepix Device Efficiency for Pattern Recognition of Tracks Generated by Ionizing Radiation

NASA Astrophysics Data System (ADS)

Leroy, Claude; Asbah, Nedaa; Gagnon, Louis-Guilaume; Larochelle, Jean-Simon; Pospisil, Stanislav; Soueid, Paul

2014-06-01

A hybrid silicon pixelated TIMEPIX detector (256 × 256 pixels with 55 μm pitch) operated in Time Over Threshold (TOT) mode was exposed to radioactive sources (241Am, 106Ru, 137Cs), protons and alpha-particles after Rutherford Backscattering on a thin gold foil of protons and alpha-particles beams delivered by the Tandem Accelerator of Montreal University. Measurements were also performed with different mixed radiation fields of heavy charged particles (protons and alpha-particles), photons and electrons produced by simultaneous exposure of TIMEPIX to the radioactive sources and to protons beams on top of the radioactive sources. All measurements were performed in vacuum. The TOT mode of operation has allowed the direct measurement of the energy deposited in each pixel. The efficiency of track recognition with this device was tested by comparing the experimental activities (determined from number of tracks measurements) of the radioactive sources with their expected activities. The efficiency of track recognition of incident protons and alpha-particles of different energies as a function of the incidence angle was measured. The operation of TIMEPIX in TOT mode has allowed a 3D mapping of the charge sharing effect in the whole volume of the silicon sensor. The effect of the bias voltage on charge sharing was investigated as the level of charge sharing is related to the local profile of the electric field in the sensor. The results of the present measurements demonstrate the TIMEPIX capability of differentiating between different types of particles species from mixed radiation fields and measuring their energy deposition. Single track analysis gives a good precision (significantly better than the 55 μm size of one detector pixel) on the coordinates of the impact point of protons interacting in the TIMEPIX silicon layer.

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

DOE PAGES

Kanisauskas, K.; Affolder, A.; Arndt, K.; ...

2017-02-15

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for twomore » active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e – to 386 e – and from 75 e – to 277 e – for the corresponding pixels.« less

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanisauskas, K.; Affolder, A.; Arndt, K.

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for twomore » active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e – to 386 e – and from 75 e – to 277 e – for the corresponding pixels.« less

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Design and implementation of non-linear image processing functions for CMOS image sensor

NASA Astrophysics Data System (ADS)

Musa, Purnawarman; Sudiro, Sunny A.; Wibowo, Eri P.; Harmanto, Suryadi; Paindavoine, Michel

2012-11-01

Today, solid state image sensors are used in many applications like in mobile phones, video surveillance systems, embedded medical imaging and industrial vision systems. These image sensors require the integration in the focal plane (or near the focal plane) of complex image processing algorithms. Such devices must meet the constraints related to the quality of acquired images, speed and performance of embedded processing, as well as low power consumption. To achieve these objectives, low-level analog processing allows extracting the useful information in the scene directly. For example, edge detection step followed by a local maxima extraction will facilitate the high-level processing like objects pattern recognition in a visual scene. Our goal was to design an intelligent image sensor prototype achieving high-speed image acquisition and non-linear image processing (like local minima and maxima calculations). For this purpose, we present in this article the design and test of a 64×64 pixels image sensor built in a standard CMOS Technology 0.35 μm including non-linear image processing. The architecture of our sensor, named nLiRIC (non-Linear Rapid Image Capture), is based on the implementation of an analog Minima/Maxima Unit. This MMU calculates the minimum and maximum values (non-linear functions), in real time, in a 2×2 pixels neighbourhood. Each MMU needs 52 transistors and the pitch of one pixel is 40×40 mu m. The total area of the 64×64 pixels is 12.5mm2. Our tests have shown the validity of the main functions of our new image sensor like fast image acquisition (10K frames per second), minima/maxima calculations in less then one ms.

Neural Network for Image-to-Image Control of Optical Tweezers

NASA Technical Reports Server (NTRS)

Decker, Arthur J.; Anderson, Robert C.; Weiland, Kenneth E.; Wrbanek, Susan Y.

2004-01-01

A method is discussed for using neural networks to control optical tweezers. Neural-net outputs are combined with scaling and tiling to generate 480 by 480-pixel control patterns for a spatial light modulator (SLM). The SLM can be combined in various ways with a microscope to create movable tweezers traps with controllable profiles. The neural nets are intended to respond to scattered light from carbon and silicon carbide nanotube sensors. The nanotube sensors are to be held by the traps for manipulation and calibration. Scaling and tiling allow the 100 by 100-pixel maximum resolution of the neural-net software to be applied in stages to exploit the full 480 by 480-pixel resolution of the SLM. One of these stages is intended to create sensitive null detectors for detecting variations in the scattered light from the nanotube sensors.

ChromAIX2: A large area, high count-rate energy-resolving photon counting ASIC for a Spectral CT Prototype

NASA Astrophysics Data System (ADS)

Steadman, Roger; Herrmann, Christoph; Livne, Amir

2017-08-01

Spectral CT based on energy-resolving photon counting detectors is expected to deliver additional diagnostic value at a lower dose than current state-of-the-art CT [1]. The capability of simultaneously providing a number of spectrally distinct measurements not only allows distinguishing between photo-electric and Compton interactions but also discriminating contrast agents that exhibit a K-edge discontinuity in the absorption spectrum, referred to as K-edge Imaging [2]. Such detectors are based on direct converting sensors (e.g. CdTe or CdZnTe) and high-rate photon counting electronics. To support the development of Spectral CT and show the feasibility of obtaining rates exceeding 10 Mcps/pixel (Poissonian observed count-rate), the ChromAIX ASIC has been previously reported showing 13.5 Mcps/pixel (150 Mcps/mm2 incident) [3]. The ChromAIX has been improved to offer the possibility of a large area coverage detector, and increased overall performance. The new ASIC is called ChromAIX2, and delivers count-rates exceeding 15 Mcps/pixel with an rms-noise performance of approximately 260 e-. It has an isotropic pixel pitch of 500 μm in an array of 22×32 pixels and is tile-able on three of its sides. The pixel topology consists of a two stage amplifier (CSA and Shaper) and a number of test features allowing to thoroughly characterize the ASIC without a sensor. A total of 5 independent thresholds are also available within each pixel, allowing to acquire 5 spectrally distinct measurements simultaneously. The ASIC also incorporates a baseline restorer to eliminate excess currents induced by the sensor (e.g. dark current and low frequency drifts) which would otherwise cause an energy estimation error. In this paper we report on the inherent electrical performance of the ChromAXI2 as well as measurements obtained with CZT (CdZnTe)/CdTe sensors and X-rays and radioactive sources.

Event-based Sensing for Space Situational Awareness

NASA Astrophysics Data System (ADS)

Cohen, G.; Afshar, S.; van Schaik, A.; Wabnitz, A.; Bessell, T.; Rutten, M.; Morreale, B.

A revolutionary type of imaging device, known as a silicon retina or event-based sensor, has recently been developed and is gaining in popularity in the field of artificial vision systems. These devices are inspired by a biological retina and operate in a significantly different way to traditional CCD-based imaging sensors. While a CCD produces frames of pixel intensities, an event-based sensor produces a continuous stream of events, each of which is generated when a pixel detects a change in log light intensity. These pixels operate asynchronously and independently, producing an event-based output with high temporal resolution. There are also no fixed exposure times, allowing these devices to offer a very high dynamic range independently for each pixel. Additionally, these devices offer high-speed, low power operation and a sparse spatiotemporal output. As a consequence, the data from these sensors must be interpreted in a significantly different way to traditional imaging sensors and this paper explores the advantages this technology provides for space imaging. The applicability and capabilities of event-based sensors for SSA applications are demonstrated through telescope field trials. Trial results have confirmed that the devices are capable of observing resident space objects from LEO through to GEO orbital regimes. Significantly, observations of RSOs were made during both day-time and nighttime (terminator) conditions without modification to the camera or optics. The event based sensor’s ability to image stars and satellites during day-time hours offers a dramatic capability increase for terrestrial optical sensors. This paper shows the field testing and validation of two different architectures of event-based imaging sensors. An eventbased sensor’s asynchronous output has an intrinsically low data-rate. In addition to low-bandwidth communications requirements, the low weight, low-power and high-speed make them ideally suitable to meeting the demanding challenges required by space-based SSA systems. Results from these experiments and the systems developed highlight the applicability of event-based sensors to ground and space-based SSA tasks.

Fixed Pattern Noise pixel-wise linear correction for crime scene imaging CMOS sensor

NASA Astrophysics Data System (ADS)

Yang, Jie; Messinger, David W.; Dube, Roger R.; Ientilucci, Emmett J.

2017-05-01

Filtered multispectral imaging technique might be a potential method for crime scene documentation and evidence detection due to its abundant spectral information as well as non-contact and non-destructive nature. Low-cost and portable multispectral crime scene imaging device would be highly useful and efficient. The second generation crime scene imaging system uses CMOS imaging sensor to capture spatial scene and bandpass Interference Filters (IFs) to capture spectral information. Unfortunately CMOS sensors suffer from severe spatial non-uniformity compared to CCD sensors and the major cause is Fixed Pattern Noise (FPN). IFs suffer from "blue shift" effect and introduce spatial-spectral correlated errors. Therefore, Fixed Pattern Noise (FPN) correction is critical to enhance crime scene image quality and is also helpful for spatial-spectral noise de-correlation. In this paper, a pixel-wise linear radiance to Digital Count (DC) conversion model is constructed for crime scene imaging CMOS sensor. Pixel-wise conversion gain Gi,j and Dark Signal Non-Uniformity (DSNU) Zi,j are calculated. Also, conversion gain is divided into four components: FPN row component, FPN column component, defects component and effective photo response signal component. Conversion gain is then corrected to average FPN column and row components and defects component so that the sensor conversion gain is uniform. Based on corrected conversion gain and estimated image incident radiance from the reverse of pixel-wise linear radiance to DC model, corrected image spatial uniformity can be enhanced to 7 times as raw image, and the bigger the image DC value within its dynamic range, the better the enhancement.

AP@home: a novel European approach to bring the artificial pancreas home.

PubMed

Heinemann, Lutz; Benesch, Carsten; DeVries, J Hans

2011-11-01

The development of an artificial pancreas (AP) made huge strides from 2006 to 2008 and a large number of activities are going on in this area of research. Until now, most AP systems under development were tested only under highly controlled conditions. The aim of our project, funded by the European Union, is to develop an AP system to such a level that it can be studied under daily life conditions at the home of patients with diabetes (hence AP@home). Based on a subcutaneous-subcutaneous closed-loop strategy (i.e., glucose sensing and insulin infusion in the subcutaneous tissue), two different approaches will be taken to achieve this aim: a two-port AP system and a single-port AP system. The two-port AP system will use off-the-shelf-components for the glucose sensor and insulin pump in combination with closed-loop algorithms generated in Europe. As to the single-port AP system, two different innovative single-port systems will be developed; in this case, continuous glucose monitoring and insulin infusion will take place via a single catheter. The first clinical trials with the two-port AP system under controlled clinical conditions have started and good progress has been made in the development of the single-port AP systems. We believe that our consortium of 12 European partners, which builds on existing achievements and close cooperation between academic centers and industry, can contribute substantially to the development of an AP system that can be used by patients in daily life. © 2011 Diabetes Technology Society.

Discrete sensors distribution for accurate plantar pressure analyses.

PubMed

Claverie, Laetitia; Ille, Anne; Moretto, Pierre

2016-12-01

The aim of this study was to determine the distribution of discrete sensors under the footprint for accurate plantar pressure analyses. For this purpose, two different sensor layouts have been tested and compared, to determine which was the most accurate to monitor plantar pressure with wireless devices in research and/or clinical practice. Ten healthy volunteers participated in the study (age range: 23-58 years). The barycenter of pressures (BoP) determined from the plantar pressure system (W-inshoe®) was compared to the center of pressures (CoP) determined from a force platform (AMTI) in the medial-lateral (ML) and anterior-posterior (AP) directions. Then, the vertical ground reaction force (vGRF) obtained from both W-inshoe® and force platform was compared for both layouts for each subject. The BoP and vGRF determined from the plantar pressure system data showed good correlation (SCC) with those determined from the force platform data, notably for the second sensor organization (ML SCC= 0.95; AP SCC=0.99; vGRF SCC=0.91). The study demonstrates that an adjusted placement of removable sensors is key to accurate plantar pressure analyses. These results are promising for a plantar pressure recording outside clinical or laboratory settings, for long time monitoring, real time feedback or for whatever activity requiring a low-cost system. Copyright © 2016 IPEM. Published by Elsevier Ltd. All rights reserved.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass.

PubMed

Han, Guoliang; Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-11-14

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0 . 15 ∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation.

Multiple Sensor Camera for Enhanced Video Capturing

NASA Astrophysics Data System (ADS)

Nagahara, Hajime; Kanki, Yoshinori; Iwai, Yoshio; Yachida, Masahiko

A resolution of camera has been drastically improved under a current request for high-quality digital images. For example, digital still camera has several mega pixels. Although a video camera has the higher frame-rate, the resolution of a video camera is lower than that of still camera. Thus, the high-resolution is incompatible with the high frame rate of ordinary cameras in market. It is difficult to solve this problem by a single sensor, since it comes from physical limitation of the pixel transfer rate. In this paper, we propose a multi-sensor camera for capturing a resolution and frame-rate enhanced video. Common multi-CCDs camera, such as 3CCD color camera, has same CCD for capturing different spectral information. Our approach is to use different spatio-temporal resolution sensors in a single camera cabinet for capturing higher resolution and frame-rate information separately. We build a prototype camera which can capture high-resolution (2588×1958 pixels, 3.75 fps) and high frame-rate (500×500, 90 fps) videos. We also proposed the calibration method for the camera. As one of the application of the camera, we demonstrate an enhanced video (2128×1952 pixels, 90 fps) generated from the captured videos for showing the utility of the camera.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass

PubMed Central

Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-01-01

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0.15∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation. PMID:29135927

Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

PubMed

Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

2015-01-01

Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution.

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

Miniature Wide-Angle Lens for Small-Pixel Electronic Camera

NASA Technical Reports Server (NTRS)

Mouroulils, Pantazis; Blazejewski, Edward

2009-01-01

A proposed wideangle lens is shown that would be especially well suited for an electronic camera in which the focal plane is occupied by an image sensor that has small pixels. The design of the lens is intended to satisfy requirements for compactness, high image quality, and reasonably low cost, while addressing issues peculiar to the operation of small-pixel image sensors. Hence, this design is expected to enable the development of a new generation of compact, high-performance electronic cameras. The lens example shown has a 60 degree field of view and a relative aperture (f-number) of 3.2. The main issues affecting the design are also shown.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE PAGES

Veale, M. C.; Adkin, P.; Booker, P.; ...

2017-12-04

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veale, M. C.; Adkin, P.; Booker, P.

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Development of X-Ray Microcalorimeter Imaging Spectrometers for the X-Ray Surveyor Mission Concept

NASA Technical Reports Server (NTRS)

Bandler, Simon R.; Adams, Joseph S.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Betncourt-Martinez, Gabriele; Miniussi, Antoine R.;

Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

NASA Astrophysics Data System (ADS)

Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

2012-05-01

Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

Color filter array pattern identification using variance of color difference image

NASA Astrophysics Data System (ADS)

Shin, Hyun Jun; Jeon, Jong Ju; Eom, Il Kyu

2017-07-01

A color filter array is placed on the image sensor of a digital camera to acquire color images. Each pixel uses only one color, since the image sensor can measure only one color per pixel. Therefore, empty pixels are filled using an interpolation process called demosaicing. The original and the interpolated pixels have different statistical characteristics. If the image is modified by manipulation or forgery, the color filter array pattern is altered. This pattern change can be a clue for image forgery detection. However, most forgery detection algorithms have the disadvantage of assuming the color filter array pattern. We present an identification method of the color filter array pattern. Initially, the local mean is eliminated to remove the background effect. Subsequently, the color difference block is constructed to emphasize the difference between the original pixel and the interpolated pixel. The variance measure of the color difference image is proposed as a means of estimating the color filter array configuration. The experimental results show that the proposed method is effective in identifying the color filter array pattern. Compared with conventional methods, our method provides superior performance.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

iPadPix—A novel educational tool to visualise radioactivity measured by a hybrid pixel detector

NASA Astrophysics Data System (ADS)

Keller, O.; Schmeling, S.; Müller, A.; Benoit, M.

2016-11-01

With the ability to attribute signatures of ionising radiation to certain particle types, pixel detectors offer a unique advantage over the traditional use of Geiger-Müller tubes also in educational settings. We demonstrate in this work how a Timepix readout chip combined with a standard 300μm pixelated silicon sensor can be used to visualise radioactivity in real-time and by means of augmented reality. The chip family is the result of technology transfer from High Energy Physics at CERN and facilitated by the Medipix Collaboration. This article summarises the development of a prototype based on an iPad mini and open source software detailed in ref. [1]. Appropriate experimental activities that explore natural radioactivity and everyday objects are given to demonstrate the use of this new tool in educational settings.

Detectability of Delaminations in Solid Rocket Motors with Embedded Stress Sensors

DTIC Science & Technology

2011-10-14

composite grain of hydroxyl-terminated polybutadiene/ammonium perchlorate (HTPB/AP). The insulation layer is ethylene propylene diene monomer ( EPDM ...The temperature-dependent mechanical properties of HTPB/AP and EPDM were obtained from in-house testing at AFRL/RZSM (Edwards AFB). The motor case is...temperature (DBST) sensors and Greg Yandek of AFRL/RZSM for the data collection of EPDM insulation material. Distribution A: Approved for public

LSA SAF Meteosat FRP products - Part 2: Evaluation and demonstration for use in the Copernicus Atmosphere Monitoring Service (CAMS)

NASA Astrophysics Data System (ADS)

Roberts, G.; Wooster, M. J.; Xu, W.; Freeborn, P. H.; Morcrette, J.-J.; Jones, L.; Benedetti, A.; Jiangping, H.; Fisher, D.; Kaiser, J. W.

2015-11-01

Characterising the dynamics of landscape-scale wildfires at very high temporal resolutions is best achieved using observations from Earth Observation (EO) sensors mounted onboard geostationary satellites. As a result, a number of operational active fire products have been developed from the data of such sensors. An example of which are the Fire Radiative Power (FRP) products, the FRP-PIXEL and FRP-GRID products, generated by the Land Surface Analysis Satellite Applications Facility (LSA SAF) from imagery collected by the Spinning Enhanced Visible and Infrared Imager (SEVIRI) onboard the Meteosat Second Generation (MSG) series of geostationary EO satellites. The processing chain developed to deliver these FRP products detects SEVIRI pixels containing actively burning fires and characterises their FRP output across four geographic regions covering Europe, part of South America and Northern and Southern Africa. The FRP-PIXEL product contains the highest spatial and temporal resolution FRP data set, whilst the FRP-GRID product contains a spatio-temporal summary that includes bias adjustments for cloud cover and the non-detection of low FRP fire pixels. Here we evaluate these two products against active fire data collected by the Moderate Resolution Imaging Spectroradiometer (MODIS) and compare the results to those for three alternative active fire products derived from SEVIRI imagery. The FRP-PIXEL product is shown to detect a substantially greater number of active fire pixels than do alternative SEVIRI-based products, and comparison to MODIS on a per-fire basis indicates a strong agreement and low bias in terms of FRP values. However, low FRP fire pixels remain undetected by SEVIRI, with errors of active fire pixel detection commission and omission compared to MODIS ranging between 9-13 % and 65-77 % respectively in Africa. Higher errors of omission result in greater underestimation of regional FRP totals relative to those derived from simultaneously collected MODIS data, ranging from 35 % over the Northern Africa region to 89 % over the European region. High errors of active fire omission and FRP underestimation are found over Europe and South America and result from SEVIRI's larger pixel area over these regions. An advantage of using FRP for characterising wildfire emissions is the ability to do so very frequently and in near-real time (NRT). To illustrate the potential of this approach, wildfire fuel consumption rates derived from the SEVIRI FRP-PIXEL product are used to characterise smoke emissions of the 2007 "mega-fire" event focused on Peloponnese (Greece) and used within the European Centre for Medium-Range Weather Forecasting (ECMWF) Integrated Forecasting System (IFS) as a demonstration of what can be achieved when using geostationary active fire data within the Copernicus Atmosphere Monitoring Service (CAMS). Qualitative comparison of the modelled smoke plumes with MODIS optical imagery illustrates that the model captures the temporal and spatial dynamics of the plume very well, and that high temporal resolution emissions estimates such as those available from a geostationary orbit are important for capturing the sub-daily variability in smoke plume parameters such as aerosol optical depth (AOD), which are increasingly less well resolved using daily or coarser temporal resolution emissions data sets. Quantitative comparison of modelled AOD with coincident MODIS and AERONET (Aerosol Robotic Network) AOD indicates that the former is overestimated by ~ 20-30 %, but captures the observed AOD dynamics with a high degree of fidelity. The case study highlights the potential of using geostationary FRP data to drive fire emissions estimates for use within atmospheric transport models such as those implemented in the Monitoring Atmospheric Composition and Climate (MACC) series of projects for the CAMS.

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

NASA Technical Reports Server (NTRS)

Zhou, Zhimin (Inventor); Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2004-01-01

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Smartphone Based Platform for Colorimetric Sensing of Dyes

NASA Astrophysics Data System (ADS)

Dutta, Sibasish; Nath, Pabitra

We demonstrate the working of a smartphone based optical sensor for measuring absorption band of coloured dyes. By integration of simple laboratory optical components with the camera unit of the smartphone we have converted it into a visible spectrometer with a pixel resolution of 0.345 nm/pixel. Light from a broadband optical source is allowed to transmit through a specific dye solution. The transmitted light signal is captured by the camera of the smartphone. The present sensor is inexpensive, portable and light weight making it an ideal handy sensor suitable for different on-field sensing.

AVIRIS calibration using the cloud-shadow method

NASA Technical Reports Server (NTRS)

Carder, K. L.; Reinersman, P.; Chen, R. F.

1993-01-01

More than 90 percent of the signal at an ocean-viewing, satellite sensor is due to the atmosphere, so a 5 percent sensor-calibration error viewing a target that contributes but 10 percent of the signal received at the sensor may result in a target-reflectance error of more than 50 percent. Since prelaunch calibration accuracies of 5 percent are typical of space-sensor requirements, recalibration of the sensor using ground-base methods is required for low-signal target. Known target reflectance or water-leaving radiance spectra and atmospheric correction parameters are required. In this article we describe an atmospheric-correction method that uses cloud shadowed pixels in combination with pixels in a neighborhood region of similar optical properties to remove atmospheric effects from ocean scenes. These neighboring pixels can then be used as known reflectance targets for validation of the sensor calibration and atmospheric correction. The method uses the difference between water-leaving radiance values for these two regions. This allows nearly identical optical contributions to the two signals (e.g., path radiance and Fresnel-reflected skylight) to be removed, leaving mostly solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by incident solar irradiance reaching the sea surface provides the remote-sensing reflectance of the ocean at the location of the neighbor region.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Ultra-low power high-dynamic range color pixel embedding RGB to r-g chromaticity transformation

NASA Astrophysics Data System (ADS)

Lecca, Michela; Gasparini, Leonardo; Gottardi, Massimo

2014-05-01

This work describes a novel color pixel topology that converts the three chromatic components from the standard RGB space into the normalized r-g chromaticity space. This conversion is implemented with high-dynamic range and with no dc power consumption, and the auto-exposure capability of the sensor ensures to capture a high quality chromatic signal, even in presence of very bright illuminants or in the darkness. The pixel is intended to become the basic building block of a CMOS color vision sensor, targeted to ultra-low power applications for mobile devices, such as human machine interfaces, gesture recognition, face detection. The experiments show that significant improvements of the proposed pixel with respect to standard cameras in terms of energy saving and accuracy on data acquisition. An application to skin color-based description is presented.

On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.

NASA Astrophysics Data System (ADS)

Guskov, A.; Shelkov, G.; Smolyanskiy, P.; Zhemchugov, A.

2016-02-01

The scientific apparatus GAMMA-400 designed for study of electromagnetic and hadron components of cosmic rays will be launched to an elliptic orbit with the apogee of about 300 000 km and the perigee of about 500 km. Such a configuration of the orbit allows it to cross periodically the radiation belt and the outer part of magnetosphere. We discuss the possibility to use hybrid pixel detecters based on the Timepix chip and semiconductive sensors on board the GAMMA-400 apparatus. Due to high granularity of the sensor (pixel size is 55 mum) and possibility to measure independently an energy deposition in each pixel, such compact and lightweight detector could be a unique instrument for study of spatial, energy and time structure of electron and proton components of the radiation belt.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Domengie, F., E-mail: florian.domengie@st.com; Morin, P.; Bauza, D.

We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metalmore » atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.« less

Compressive hyperspectral sensor for LWIR gas detection

NASA Astrophysics Data System (ADS)

Russell, Thomas A.; McMackin, Lenore; Bridge, Bob; Baraniuk, Richard

2012-06-01

Focal plane arrays with associated electronics and cooling are a substantial portion of the cost, complexity, size, weight, and power requirements of Long-Wave IR (LWIR) imagers. Hyperspectral LWIR imagers add significant data volume burden as they collect a high-resolution spectrum at each pixel. We report here on a LWIR Hyperspectral Sensor that applies Compressive Sensing (CS) in order to achieve benefits in these areas. The sensor applies single-pixel detection technology demonstrated by Rice University. The single-pixel approach uses a Digital Micro-mirror Device (DMD) to reflect and multiplex the light from a random assortment of pixels onto the detector. This is repeated for a number of measurements much less than the total number of scene pixels. We have extended this architecture to hyperspectral LWIR sensing by inserting a Fabry-Perot spectrometer in the optical path. This compressive hyperspectral imager collects all three dimensions on a single detection element, greatly reducing the size, weight and power requirements of the system relative to traditional approaches, while also reducing data volume. The CS architecture also supports innovative adaptive approaches to sensing, as the DMD device allows control over the selection of spatial scene pixels to be multiplexed on the detector. We are applying this advantage to the detection of plume gases, by adaptively locating and concentrating target energy. A key challenge in this system is the diffraction loss produce by the DMD in the LWIR. We report the results of testing DMD operation in the LWIR, as well as system spatial and spectral performance.

Precise color images a high-speed color video camera system with three intensified sensors

NASA Astrophysics Data System (ADS)

Oki, Sachio; Yamakawa, Masafumi; Gohda, Susumu; Etoh, Takeharu G.

1999-06-01

High speed imaging systems have been used in a large field of science and engineering. Although the high speed camera systems have been improved to high performance, most of their applications are only to get high speed motion pictures. However, in some fields of science and technology, it is useful to get some other information, such as temperature of combustion flame, thermal plasma and molten materials. Recent digital high speed video imaging technology should be able to get such information from those objects. For this purpose, we have already developed a high speed video camera system with three-intensified-sensors and cubic prism image splitter. The maximum frame rate is 40,500 pps (picture per second) at 64 X 64 pixels and 4,500 pps at 256 X 256 pixels with 256 (8 bit) intensity resolution for each pixel. The camera system can store more than 1,000 pictures continuously in solid state memory. In order to get the precise color images from this camera system, we need to develop a digital technique, which consists of a computer program and ancillary instruments, to adjust displacement of images taken from two or three image sensors and to calibrate relationship between incident light intensity and corresponding digital output signals. In this paper, the digital technique for pixel-based displacement adjustment are proposed. Although the displacement of the corresponding circle was more than 8 pixels in original image, the displacement was adjusted within 0.2 pixels at most by this method.

Computation of dark frames in digital imagers

NASA Astrophysics Data System (ADS)

Widenhorn, Ralf; Rest, Armin; Blouke, Morley M.; Berry, Richard L.; Bodegom, Erik

2007-02-01

Dark current is caused by electrons that are thermally exited into the conduction band. These electrons are collected by the well of the CCD and add a false signal to the chip. We will present an algorithm that automatically corrects for dark current. It uses a calibration protocol to characterize the image sensor for different temperatures. For a given exposure time, the dark current of every pixel is characteristic of a specific temperature. The dark current of every pixel can therefore be used as an indicator of the temperature. Hot pixels have the highest signal-to-noise ratio and are the best temperature sensors. We use the dark current of a several hundred hot pixels to sense the chip temperature and predict the dark current of all pixels on the chip. Dark current computation is not a new concept, but our approach is unique. Some advantages of our method include applicability for poorly temperature-controlled camera systems and the possibility of ex post facto dark current correction.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

The Hyperspectral Imager for the Coastal Ocean (HICO): Sensor and Data Processing Overview

DTIC Science & Technology

2010-01-20

backscattering coefficients, and others. Several of these software modules will be developed within the Automated Processing System (APS), a data... Automated Processing System (APS) NRL developed APS, which processes satellite data into ocean color data products. APS is a collection of methods...used for ocean color processing which provide the tools for the automated processing of satellite imagery [1]. These tools are in the process of

Incorporating the APS Catalog of the POSS I and Image Archive in ADS

NASA Technical Reports Server (NTRS)

Humphreys, Roberta M.

1998-01-01

The primary purpose of this contract was to develop the software to both create and access an on-line database of images from digital scans of the Palomar Sky Survey. This required modifying our DBMS (called Star Base) to create an image database from the actual raw pixel data from the scans. The digitized images are processed into a set of coordinate-reference index and pixel files that are stored in run-length files, thus achieving an efficient lossless compression. For efficiency and ease of referencing, each digitized POSS I plate is then divided into 900 subplates. Our custom DBMS maps each query into the corresponding POSS plate(s) and subplate(s). All images from the appropriate subplates are retrieved from disk with byte-offsets taken from the index files. These are assembled on-the-fly into a GIF image file for browser display, and a FITS format image file for retrieval. The FITS images have a pixel size of 0.33 arcseconds. The FITS header contains astrometric and photometric information. This method keeps the disk requirements manageable while allowing for future improvements. When complete, the APS Image Database will contain over 130 Gb of data. A set of web pages query forms are available on-line, as well as an on-line tutorial and documentation. The database is distributed to the Internet by a high-speed SGI server and a high-bandwidth disk system. URL is http://aps.umn.edu/IDB/. The image database software is written in perl and C and has been compiled on SGI computers with MIX5.3. A copy of the written documentation is included and the software is on the accompanying exabyte tape.

Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor.

PubMed

Mochizuki, Futa; Kagawa, Keiichiro; Okihara, Shin-ichiro; Seo, Min-Woong; Zhang, Bo; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

2016-02-22

In the work described in this paper, an image reproduction scheme with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor was demonstrated. The sensor captures an object by compressing a sequence of images with focal-plane temporally random-coded shutters, followed by reconstruction of time-resolved images. Because signals are modulated pixel-by-pixel during capturing, the maximum frame rate is defined only by the charge transfer speed and can thus be higher than those of conventional ultra-high-speed cameras. The frame rate and optical efficiency of the multi-aperture scheme are discussed. To demonstrate the proposed imaging method, a 5×3 multi-aperture image sensor was fabricated. The average rising and falling times of the shutters were 1.53 ns and 1.69 ns, respectively. The maximum skew among the shutters was 3 ns. The sensor observed plasma emission by compressing it to 15 frames, and a series of 32 images at 200 Mfps was reconstructed. In the experiment, by correcting disparities and considering temporal pixel responses, artifacts in the reconstructed images were reduced. An improvement in PSNR from 25.8 dB to 30.8 dB was confirmed in simulations.

Status of HVCMOS developments for ATLAS

NASA Astrophysics Data System (ADS)

Perić, I.; Blanco, R.; Casanova Mohr, R.; Ehrler, F.; Guezzi Messaoud, F.; Krämer, C.; Leys, R.; Prathapan, M.; Schimassek, R.; Schöning, A.; Vilella Figueras, E.; Weber, A.; Zhang, H.

2017-02-01

This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented.

Multiocular image sensor with on-chip beam-splitter and inner meta-micro-lens for single-main-lens stereo camera.

PubMed

Koyama, Shinzo; Onozawa, Kazutoshi; Tanaka, Keisuke; Saito, Shigeru; Kourkouss, Sahim Mohamed; Kato, Yoshihisa

2016-08-08

We developed multiocular 1/3-inch 2.75-μm-pixel-size 2.1M- pixel image sensors by co-design of both on-chip beam-splitter and 100-nm-width 800-nm-depth patterned inner meta-micro-lens for single-main-lens stereo camera systems. A camera with the multiocular image sensor can capture horizontally one-dimensional light filed by both the on-chip beam-splitter horizontally dividing ray according to incident angle, and the inner meta-micro-lens collecting the divided ray into pixel with small optical loss. Cross-talks between adjacent light field images of a fabricated binocular image sensor and of a quad-ocular image sensor are as low as 6% and 7% respectively. With the selection of two images from one-dimensional light filed images, a selective baseline for stereo vision is realized to view close objects with single-main-lens. In addition, by adding multiple light field images with different ratios, baseline distance can be tuned within an aperture of a main lens. We suggest the electrically selective or tunable baseline stereo vision to reduce 3D fatigue of viewers.

Plenoptic camera image simulation for reconstruction algorithm verification

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim

2014-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. Two distinct camera forms have been proposed in the literature. The first has the camera image focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The second plenoptic form has the lenslet array relaying the image formed by the camera lens to the sensor. We have developed a raytracing package that can simulate images formed by a generalized version of the plenoptic camera. Several rays from each sensor pixel are traced backwards through the system to define a cone of rays emanating from the entrance pupil of the camera lens. Objects that lie within this cone are integrated to lead to a color and exposure level for that pixel. To speed processing three-dimensional objects are approximated as a series of planes at different depths. Repeating this process for each pixel in the sensor leads to a simulated plenoptic image on which different reconstruction algorithms can be tested.

Large amplitude change in spot-induced rotational modulation of the Kepler Ap star KIC 2569073

NASA Astrophysics Data System (ADS)

Drury, Jason A.; Murphy, Simon J.; Derekas, Aliz; Sódor, Ádám; Stello, Dennis; Kuehn, Charles A.; Bedding, Timothy R.; Bognár, Zsófia; Szigeti, László; Szakáts, Róbert; Sárneczky, Krisztián; Molnár, László

2017-11-01

An investigation of the 200 × 200 pixel `superstamp' images of the centres of the open clusters NGC 6791 and NGC 6819 allows for the identification and study of many variable stars that were not included in the Kepler target list. KIC 2569073 (V = 14.22), is a particularly interesting variable Ap star that we discovered in the NGC 6791 superstamp. With a rotational period of 14.67 d and 0.034 mag variability, it has one of the largest peak-to-peak variations of any known Ap star. Colour photometry reveals an antiphase correlation between the B band, and the V, R and I bands. This Ap star is a rotational variable, also known as an α2 CVn star, and is one of only a handful of Ap stars observed by Kepler. While no change in spot period or amplitude is observed within the 4 yr Kepler time series, the amplitude shows a large increase compared to ground-based photometry obtained two decades ago.

High speed systems for time-resolved experiments with synchrotron radiation

NASA Astrophysics Data System (ADS)

Koziol, Anna; Maj, Piotr

2018-02-01

The UFXC32k is a single photon counting hybrid pixel detector with 75 μm pixel pitch. It was designed to cope with high X-ray intensities and therefore it is a very good candiate for synchrotron applications. In order to use this detector in an application, a dedicated setup must be designed and built allowing proper operation of the detector within the experiment. The paper presents two setups built for the purpose of Pump-Probe-Probe experiments at the Synchrotron SOLEIL and XPCS experiments at the APS.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Fusion: ultra-high-speed and IR image sensors

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Dao, V. T. S.; Nguyen, Quang A.; Kimata, M.

2015-08-01

Most targets of ultra-high-speed video cameras operating at more than 1 Mfps, such as combustion, crack propagation, collision, plasma, spark discharge, an air bag at a car accident and a tire under a sudden brake, generate sudden heat. Researchers in these fields require tools to measure the high-speed motion and heat simultaneously. Ultra-high frame rate imaging is achieved by an in-situ storage image sensor. Each pixel of the sensor is equipped with multiple memory elements to record a series of image signals simultaneously at all pixels. Image signals stored in each pixel are read out after an image capturing operation. In 2002, we developed an in-situ storage image sensor operating at 1 Mfps 1). However, the fill factor of the sensor was only 15% due to a light shield covering the wide in-situ storage area. Therefore, in 2011, we developed a backside illuminated (BSI) in-situ storage image sensor to increase the sensitivity with 100% fill factor and a very high quantum efficiency 2). The sensor also achieved a much higher frame rate,16.7 Mfps, thanks to the wiring on the front side with more freedom 3). The BSI structure has another advantage that it has less difficulties in attaching an additional layer on the backside, such as scintillators. This paper proposes development of an ultra-high-speed IR image sensor in combination of advanced nano-technologies for IR imaging and the in-situ storage technology for ultra-highspeed imaging with discussion on issues in the integration.

Quantitative evaluation of the accuracy and variance of individual pixels in a scientific CMOS (sCMOS) camera for computational imaging

NASA Astrophysics Data System (ADS)

Watanabe, Shigeo; Takahashi, Teruo; Bennett, Keith

2017-02-01

The"scientific" CMOS (sCMOS) camera architecture fundamentally differs from CCD and EMCCD cameras. In digital CCD and EMCCD cameras, conversion from charge to the digital output is generally through a single electronic chain, and the read noise and the conversion factor from photoelectrons to digital outputs are highly uniform for all pixels, although quantum efficiency may spatially vary. In CMOS cameras, the charge to voltage conversion is separate for each pixel and each column has independent amplifiers and analog-to-digital converters, in addition to possible pixel-to-pixel variation in quantum efficiency. The "raw" output from the CMOS image sensor includes pixel-to-pixel variability in the read noise, electronic gain, offset and dark current. Scientific camera manufacturers digitally compensate the raw signal from the CMOS image sensors to provide usable images. Statistical noise in images, unless properly modeled, can introduce errors in methods such as fluctuation correlation spectroscopy or computational imaging, for example, localization microscopy using maximum likelihood estimation. We measured the distributions and spatial maps of individual pixel offset, dark current, read noise, linearity, photoresponse non-uniformity and variance distributions of individual pixels for standard, off-the-shelf Hamamatsu ORCA-Flash4.0 V3 sCMOS cameras using highly uniform and controlled illumination conditions, from dark conditions to multiple low light levels between 20 to 1,000 photons / pixel per frame to higher light conditions. We further show that using pixel variance for flat field correction leads to errors in cameras with good factory calibration.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

The wide field imager instrument for Athena

NASA Astrophysics Data System (ADS)

Meidinger, Norbert; Nandra, Kirpal; Plattner, Markus; Porro, Matteo; Rau, Arne; Santangelo, Andrea E.; Tenzer, Chris; Wilms, Jörn

2014-07-01

The "Hot and Energetic Universe" has been selected as the science theme for ESA's L2 mission, scheduled for launch in 2028. The proposed Athena X-ray observatory provides the necessary capabilities to achieve the ambitious goals of the science theme. The X-ray mirrors are based on silicon pore optics technology and will have a 12 m focal length. Two complementary camera systems are foreseen which can be moved in and out of the focal plane by an interchange mechanism. These instruments are the actively shielded micro-calorimeter spectrometer X-IFU and the Wide Field Imager (WFI). The WFI will combine an unprecedented survey power through its large field of view of 40 arcmin with a high countrate capability (approx. 1 Crab). It permits a state-of-the-art energy resolution in the energy band of 0.1 keV to 15 keV during the entire mission lifetime (e.g. FWHM <= 150 eV at 6 keV). This performance is accomplished by a set of DEPFET active pixel sensor matrices with a pixel size matching the angular resolution of 5 arcsec (on-axis) of the mirror system. Each DEPFET pixel is a combined detector-amplifier structure with a MOSFET integrated onto a fully depleted 450 micron thick silicon bulk. The signal electrons generated by an X-ray photon are collected in a so-called internal gate below the transistor channel. The resulting change of the conductivity of the transistor channel is proportional to the number of electrons and thus a measure for the photon energy. DEPFETs have already been developed for the "Mercury Imaging X-ray Spectrometer" on-board of ESA's BepiColombo mission. For Athena we develop enhanced sensors with integrated electronic shutter and an additional analog storage area in each pixel. These features improve the peak-to-background ratio of the spectra and minimize dead time. The sensor will be read out with a new, fast, low-noise multi-channel analog signal processor with integrated sequencer and serial analog output. The architecture of sensor and readout ASIC allows readout in full frame mode and window mode as well by addressing selectively arbitrary sub-areas of the sensor allowing time resolution in the order of 10 μs. The further detector electronics has mainly the following tasks: digitization, pre-processing and telemetry of event data as well as supply and control of the detector system. Although the sensor will already be equipped with an on-chip light blocking filter, a filter wheel is necessary to provide an additional external filter, an on-board calibration source, an open position for outgassing, and a closed position for protection of the sensor. The sensor concept provides high quantum efficiency over the entire energy band and we intend to keep the instrumental background as low as possible by designing a graded Z-shield around the sensor. All these properties make the WFI a very powerful survey instrument, significantly surpassing currently existing observatories and in addition allow high-time resolution of the brightest X-ray sources with low pile-up and high efficiency. This manuscript will summarize the current instrument concept and design, the status of the technology development, and the envisaged baseline performance.

Radiation hard analog circuits for ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

The Mammographic Head Demonstrator Developed in the Framework of the “IMI” Project:. First Imaging Tests Results

NASA Astrophysics Data System (ADS)

Bisogni, Maria Giuseppina

2006-04-01

In this paper we report on the performances and the first imaging test results of a digital mammographic demonstrator based on GaAs pixel detectors. The heart of this prototype is the X-ray detection unit, which is a GaAs pixel sensor read-out by the PCC/MEDIPIXI circuit. Since the active area of the sensor is 1 cm2, 18 detectors have been organized in two staggered rows of nine chips each. To cover the typical mammographic format (18 × 24 cm2) a linear scanning is performed by means of a stepper motor. The system is integrated in mammographic equipment comprehending the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies in collaboration with the universities of Ferrara, Roma “La Sapienza”, Pisa and the INFN.

Scalable Microfabrication Procedures for Adhesive-Integrated Flexible and Stretchable Electronic Sensors.

PubMed

Kang, Dae Y; Kim, Yun-Soung; Ornelas, Gladys; Sinha, Mridu; Naidu, Keerthiga; Coleman, Todd P

2015-09-16

New classes of ultrathin flexible and stretchable devices have changed the way modern electronics are designed to interact with their target systems. Though more and more novel technologies surface and steer the way we think about future electronics, there exists an unmet need in regards to optimizing the fabrication procedures for these devices so that large-scale industrial translation is realistic. This article presents an unconventional approach for facile microfabrication and processing of adhesive-peeled (AP) flexible sensors. By assembling AP sensors on a weakly-adhering substrate in an inverted fashion, we demonstrate a procedure with 50% reduced end-to-end processing time that achieves greater levels of fabrication yield. The methodology is used to demonstrate the fabrication of electrical and mechanical flexible and stretchable AP sensors that are peeled-off their carrier substrates by consumer adhesives. In using this approach, we outline the manner by which adhesion is maintained and buckling is reduced for gold film processing on polydimethylsiloxane substrates. In addition, we demonstrate the compatibility of our methodology with large-scale post-processing using a roll-to-roll approach.

Scalable Microfabrication Procedures for Adhesive-Integrated Flexible and Stretchable Electronic Sensors

PubMed Central

Kang, Dae Y.; Kim, Yun-Soung; Ornelas, Gladys; Sinha, Mridu; Naidu, Keerthiga; Coleman, Todd P.

2015-01-01

New classes of ultrathin flexible and stretchable devices have changed the way modern electronics are designed to interact with their target systems. Though more and more novel technologies surface and steer the way we think about future electronics, there exists an unmet need in regards to optimizing the fabrication procedures for these devices so that large-scale industrial translation is realistic. This article presents an unconventional approach for facile microfabrication and processing of adhesive-peeled (AP) flexible sensors. By assembling AP sensors on a weakly-adhering substrate in an inverted fashion, we demonstrate a procedure with 50% reduced end-to-end processing time that achieves greater levels of fabrication yield. The methodology is used to demonstrate the fabrication of electrical and mechanical flexible and stretchable AP sensors that are peeled-off their carrier substrates by consumer adhesives. In using this approach, we outline the manner by which adhesion is maintained and buckling is reduced for gold film processing on polydimethylsiloxane substrates. In addition, we demonstrate the compatibility of our methodology with large-scale post-processing using a roll-to-roll approach. PMID:26389915

A study on rational function model generation for TerraSAR-X imagery.

PubMed

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-09-09

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10-3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction.

A Study on Rational Function Model Generation for TerraSAR-X Imagery

PubMed Central

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-01-01

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10−3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction. PMID:24021971

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Panoramic thermal imaging: challenges and tradeoffs

NASA Astrophysics Data System (ADS)

Aburmad, Shimon

2014-06-01

Over the past decade, we have witnessed a growing demand for electro-optical systems that can provide continuous 3600 coverage. Applications such as perimeter security, autonomous vehicles, and military warning systems are a few of the most common applications for panoramic imaging. There are several different technological approaches for achieving panoramic imaging. Solutions based on rotating elements do not provide continuous coverage as there is a time lag between updates. Continuous panoramic solutions either use "stitched" images from multiple adjacent sensors, or sophisticated optical designs which warp a panoramic view onto a single sensor. When dealing with panoramic imaging in the visible spectrum, high volume production and advancement of semiconductor technology has enabled the use of CMOS/CCD image sensors with a huge number of pixels, small pixel dimensions, and low cost devices. However, in the infrared spectrum, the growth of detector pixel counts, pixel size reduction, and cost reduction is taking place at a slower rate due to the complexity of the technology and limitations caused by the laws of physics. In this work, we will explore the challenges involved in achieving 3600 panoramic thermal imaging, and will analyze aspects such as spatial resolution, FOV, data complexity, FPA utilization, system complexity, coverage and cost of the different solutions. We will provide illustrations, calculations, and tradeoffs between three solutions evaluated by Opgal: A unique 3600 lens design using an LWIR XGA detector, stitching of three adjacent LWIR sensors equipped with a low distortion 1200 lens, and a fisheye lens with a HFOV of 180º and an XGA sensor.

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

The Transition-Edge-Sensor Array for the Micro-X Sounding Rocket

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, Sarah Elizabeth; Chervenak J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porst, J. P.;

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Using polynomials to simplify fixed pattern noise and photometric correction of logarithmic CMOS image sensors.

PubMed

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-10-16

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient.

A 3D image sensor with adaptable charge subtraction scheme for background light suppression

NASA Astrophysics Data System (ADS)

Shin, Jungsoon; Kang, Byongmin; Lee, Keechang; Kim, James D. K.

2013-02-01

We present a 3D ToF (Time-of-Flight) image sensor with adaptive charge subtraction scheme for background light suppression. The proposed sensor can alternately capture high resolution color image and high quality depth map in each frame. In depth-mode, the sensor requires enough integration time for accurate depth acquisition, but saturation will occur in high background light illumination. We propose to divide the integration time into N sub-integration times adaptively. In each sub-integration time, our sensor captures an image without saturation and subtracts the charge to prevent the pixel from the saturation. In addition, the subtraction results are cumulated N times obtaining a final result image without background illumination at full integration time. Experimental results with our own ToF sensor show high background suppression performance. We also propose in-pixel storage and column-level subtraction circuit for chiplevel implementation of the proposed method. We believe the proposed scheme will enable 3D sensors to be used in out-door environment.

Reduced signal crosstalk multi neurotransmitter image sensor by microhole array structure

NASA Astrophysics Data System (ADS)

Ogaeri, Yuta; Lee, You-Na; Mitsudome, Masato; Iwata, Tatsuya; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-06-01

A microhole array structure combined with an enzyme immobilization method using magnetic beads can enhance the target discernment capability of a multi neurotransmitter image sensor. Here we report the fabrication and evaluation of the H+-diffusion-preventing capability of the sensor with the array structure. The structure with an SU-8 photoresist has holes with a size of 24.5 × 31.6 µm2. Sensors were prepared with the array structure of three different heights: 0, 15, and 60 µm. When the sensor has the structure of 60 µm height, 48% reduced output voltage is measured at a H+-sensitive null pixel that is located 75 µm from the acetylcholinesterase (AChE)-immobilized pixel, which is the starting point of H+ diffusion. The suppressed H+ immigration is shown in a two-dimensional (2D) image in real time. The sensor parameters, such as height of the array structure and measuring time, are optimized experimentally. The sensor is expected to effectively distinguish various neurotransmitters in biological samples.

Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade

NASA Astrophysics Data System (ADS)

Centis Vignali, M.

2015-02-01

The high-luminosity upgrade of the Large Hadron Collider foreseen for 2023 resulted on the decision to replace the tracker system of the CMS experiment. The innermost layer of the new pixel detector will experience fluences in the order of phieq ≈ 1016 cm-2 and a dose of ≈ 5 MGy after an integrated luminosity of 3000 fb-1. Several materials and designs are under investigation in order to build a detector that can withstand such high fluences. Thin planar silicon sensors are good candidates to achieve this goal since the degradation of the signal produced by traversing particles is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm. The investigation includes pad diodes and strip detectors irradiated up to a fluence of phieq = 1.3 × 1016 cm-2, and 3 × 1015 cm-2, respectively. The electrical properties of diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. A beam telescope has been used to determine precisely the impact position of beam particles on the sensor. This allows the unbiased extraction of the charge deposited in the strip sensor and good identification of the noise. In this paper, the results obtained for p-bulk sensors are shown. The charge collection efficiency of the strip sensors is 90% at 1000 V after a fluence of phieq = 3 × 1015 cm-2. The irradiated diodes show charge multiplication effects. The impact of the threshold applied to a detector on its efficiency is also discussed.

Sensing, Spectra and Scaling: What's in Store for Land Observations

NASA Technical Reports Server (NTRS)

Goetz, Alexander F. H.

2001-01-01

Bill Pecora's 1960's vision of the future, using spacecraft-based sensors for mapping the environment and exploring for resources, is being implemented today. New technology has produced better sensors in space such as the Landsat Thematic Mapper (TM) and SPOT, and creative researchers are continuing to find new applications. However, with existing sensors, and those intended for launch in this century, the potential for extracting information from the land surface is far from being exploited. The most recent technology development is imaging spectrometry, the acquisition of images in hundreds of contiguous spectral bands, such that for any pixel a complete reflectance spectrum can be acquired. Experience with Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) has shown that, with proper attention paid to absolute calibration, it is possible to acquire apparent surface reflectance to 5% accuracy without any ground-based measurement. The data reduction incorporates in educated guess of the aerosol scattering, development of a precipitable water vapor map from the data and mapping of cirrus clouds in the 1.38 micrometer band. This is not possible with TM. The pixel size in images of the earth plays and important role in the type and quality of information that can be derived. Less understood is the coupling between spatial and spectral resolution in a sensor. Recent work has shown that in processing the data to derive the relative abundance of materials in a pixel, also known is unmixing, the pixel size is an important parameter. A variance in the relative abundance of materials among the pixels is necessary to be able to derive the endmembers or pure material constituent spectra. In most cases, the 1 km pixel size for the Earth Observing System Moderate Resolution Imaging Spectroradiometer (MODIS) instrument is too large to meet the variance criterion. A pointable high spatial and spectral resolution imaging spectrometer in orbit will be necessary to make the major next step in our understanding of the solid earth surface and its changing face.

Rugged: an operational, open-source solution for Sentinel-2 mapping

NASA Astrophysics Data System (ADS)

Maisonobe, Luc; Seyral, Jean; Prat, Guylaine; Guinet, Jonathan; Espesset, Aude

2015-10-01

When you map the entire Earth every 5 days with the aim of generating high-quality time series over land, there is no room for geometrical error: the algorithms have to be stable, reliable, and precise. Rugged, a new open-source library for pixel geolocation, is at the geometrical heart of the operational processing for Sentinel-2. Rugged performs sensor-to-terrain mapping taking into account ground Digital Elevation Models, Earth rotation with all its small irregularities, on-board sensor pixel individual lines-of-sight, spacecraft motion and attitude, and all significant physical effects. It provides direct and inverse location, i.e. it allows the accurate computation of which ground point is viewed from a specific pixel in a spacecraft instrument, and conversely which pixel will view a specified ground point. Direct and inverse location can be used to perform full ortho-rectification of images and correlation between sensors observing the same area. Implemented as an add-on for Orekit (Orbits Extrapolation KIT; a low-level space dynamics library), Rugged also offers the possibility of simulating satellite motion and attitude auxiliary data using Orekit's full orbit propagation capability. This is a considerable advantage for test data generation and mission simulation activities. Together with the Orfeo ToolBox (OTB) image processing library, Rugged provides the algorithmic core of Sentinel-2 Instrument Processing Facilities. The S2 complex viewing model - with 12 staggered push-broom detectors and 13 spectral bands - is built using Rugged objects, enabling the computation of rectification grids for mapping between cartographic and focal plane coordinates. These grids are passed to the OTB library for further image resampling, thus completing the ortho-rectification chain. Sentinel-2 stringent operational requirements to process several terabytes of data per week represented a tough challenge, though one that was well met by Rugged in terms of the robustness and performance of the library.

Optical magnetic detection of single-neuron action potentials using quantum defects in diamond

PubMed Central

Barry, John F.; Turner, Matthew J.; Schloss, Jennifer M.; Glenn, David R.; Song, Yuyu; Lukin, Mikhail D.; Park, Hongkun; Walsworth, Ronald L.

2016-01-01

Magnetic fields from neuronal action potentials (APs) pass largely unperturbed through biological tissue, allowing magnetic measurements of AP dynamics to be performed extracellularly or even outside intact organisms. To date, however, magnetic techniques for sensing neuronal activity have either operated at the macroscale with coarse spatial and/or temporal resolution—e.g., magnetic resonance imaging methods and magnetoencephalography—or been restricted to biophysics studies of excised neurons probed with cryogenic or bulky detectors that do not provide single-neuron spatial resolution and are not scalable to functional networks or intact organisms. Here, we show that AP magnetic sensing can be realized with both single-neuron sensitivity and intact organism applicability using optically probed nitrogen-vacancy (NV) quantum defects in diamond, operated under ambient conditions and with the NV diamond sensor in close proximity (∼10 µm) to the biological sample. We demonstrate this method for excised single neurons from marine worm and squid, and then exterior to intact, optically opaque marine worms for extended periods and with no observed adverse effect on the animal. NV diamond magnetometry is noninvasive and label-free and does not cause photodamage. The method provides precise measurement of AP waveforms from individual neurons, as well as magnetic field correlates of the AP conduction velocity, and directly determines the AP propagation direction through the inherent sensitivity of NVs to the associated AP magnetic field vector. PMID:27911765

Optical magnetic detection of single-neuron action potentials using quantum defects in diamond.

PubMed

Barry, John F; Turner, Matthew J; Schloss, Jennifer M; Glenn, David R; Song, Yuyu; Lukin, Mikhail D; Park, Hongkun; Walsworth, Ronald L

2016-12-06

Magnetic fields from neuronal action potentials (APs) pass largely unperturbed through biological tissue, allowing magnetic measurements of AP dynamics to be performed extracellularly or even outside intact organisms. To date, however, magnetic techniques for sensing neuronal activity have either operated at the macroscale with coarse spatial and/or temporal resolution-e.g., magnetic resonance imaging methods and magnetoencephalography-or been restricted to biophysics studies of excised neurons probed with cryogenic or bulky detectors that do not provide single-neuron spatial resolution and are not scalable to functional networks or intact organisms. Here, we show that AP magnetic sensing can be realized with both single-neuron sensitivity and intact organism applicability using optically probed nitrogen-vacancy (NV) quantum defects in diamond, operated under ambient conditions and with the NV diamond sensor in close proximity (∼10 µm) to the biological sample. We demonstrate this method for excised single neurons from marine worm and squid, and then exterior to intact, optically opaque marine worms for extended periods and with no observed adverse effect on the animal. NV diamond magnetometry is noninvasive and label-free and does not cause photodamage. The method provides precise measurement of AP waveforms from individual neurons, as well as magnetic field correlates of the AP conduction velocity, and directly determines the AP propagation direction through the inherent sensitivity of NVs to the associated AP magnetic field vector.

Geometric correction methods for Timepix based large area detectors

NASA Astrophysics Data System (ADS)

Zemlicka, J.; Dudak, J.; Karch, J.; Krejci, F.

2017-01-01

X-ray micro radiography with the hybrid pixel detectors provides versatile tool for the object inspection in various fields of science. It has proven itself especially suitable for the samples with low intrinsic attenuation contrast (e.g. soft tissue in biology, plastics in material sciences, thin paint layers in cultural heritage, etc.). The limited size of single Medipix type detector (1.96 cm2) was recently overcome by the construction of large area detectors WidePIX assembled of Timepix chips equipped with edgeless silicon sensors. The largest already built device consists of 100 chips and provides fully sensitive area of 14.3 × 14.3 cm2 without any physical gaps between sensors. The pixel resolution of this device is 2560 × 2560 pixels (6.5 Mpix). The unique modular detector layout requires special processing of acquired data to avoid occurring image distortions. It is necessary to use several geometric compensations after standard corrections methods typical for this type of pixel detectors (i.e. flat-field, beam hardening correction). The proposed geometric compensations cover both concept features and particular detector assembly misalignment of individual chip rows of large area detectors based on Timepix assemblies. The former deals with larger border pixels in individual edgeless sensors and their behaviour while the latter grapple with shifts, tilts and steps between detector rows. The real position of all pixels is defined in Cartesian coordinate system and together with non-binary reliability mask it is used for the final image interpolation. The results of geometric corrections for test wire phantoms and paleo botanic material are presented in this article.

NASA Tech Briefs, April 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

GLUT4 Mobilization Supports Energetic Demands of Active Synapses.

PubMed

Ashrafi, Ghazaleh; Wu, Zhuhao; Farrell, Ryan J; Ryan, Timothy A

2017-02-08

The brain is highly sensitive to proper fuel availability as evidenced by the rapid decline in neuronal function during ischemic attacks and acute severe hypoglycemia. We previously showed that sustained presynaptic function requires activity-driven glycolysis. Here, we provide strong evidence that during action potential (AP) firing, nerve terminals rely on the glucose transporter GLUT4 as a glycolytic regulatory system to meet the activity-driven increase in energy demands. Activity at synapses triggers insertion of GLUT4 into the axonal plasma membrane driven by activation of the metabolic sensor AMP kinase. Furthermore, we show that genetic ablation of GLUT4 leads to an arrest of synaptic vesicle recycling during sustained AP firing, similar to what is observed during acute glucose deprivation. The reliance on this biochemical regulatory system for "exercising" synapses is reminiscent of that occurring in exercising muscle to sustain cellular function and identifies nerve terminals as critical sites of proper metabolic control. Copyright © 2017 Elsevier Inc. All rights reserved.

The ABLE ACE wavefront sensor

NASA Astrophysics Data System (ADS)

Butts, Robert R.

1997-08-01

A low noise, high resolution Shack-Hartmann wavefront sensor was included in the ABLE-ACE instrument suite to obtain direct high resolution phase measurements of the 0.53 micrometers pulsed laser beam propagated through high altitude atmospheric turbulence. The wavefront sensor employed a Fired geometry using a lenslet array which provided approximately 17 sub-apertures across the pupil. The lenslets focused the light in each sub-aperture onto a 21 by 21 array of pixels in the camera focal plane with 8 pixels in the camera focal plane with 8 pixels across the central lobe of the diffraction limited spot. The goal of the experiment was to measure the effects of the turbulence in the free atmosphere on propagation, but the wavefront sensor also detected the aberrations induced by the aircraft boundary layer and the receiver aircraft internal beam path. Data analysis methods used to extract the desired atmospheric contribution to the phase measurements from the data corrupted by non-atmospheric aberrations are described. Approaches which were used included a reconstruction of the phase as a linear combination of Zernike polynomials coupled with optical estimator sand computation of structure functions of the sub-aperture slopes. The theoretical basis for the data analysis techniques is presented. Results are described, and comparisons with theory and simulations are shown. Estimates of average turbulence strength along the propagation path from the wavefront sensor showed good agreement with other sensor. The Zernike spectra calculated from the wavefront sensor data were consistent with the standard Kolmogorov model of turbulence.

Design of integrated eye tracker-display device for head mounted systems

NASA Astrophysics Data System (ADS)

David, Y.; Apter, B.; Thirer, N.; Baal-Zedaka, I.; Efron, U.

2009-08-01

We propose an Eye Tracker/Display system, based on a novel, dual function device termed ETD, which allows sharing the optical paths of the Eye tracker and the display and on-chip processing. The proposed ETD design is based on a CMOS chip combining a Liquid-Crystal-on-Silicon (LCoS) micro-display technology with near infrared (NIR) Active Pixel Sensor imager. The ET operation allows capturing the Near IR (NIR) light, back-reflected from the eye's retina. The retinal image is then used for the detection of the current direction of eye's gaze. The design of the eye tracking imager is based on the "deep p-well" pixel technology, providing low crosstalk while shielding the active pixel circuitry, which serves the imaging and the display drivers, from the photo charges generated in the substrate. The use of the ETD in the HMD Design enables a very compact design suitable for Smart Goggle applications. A preliminary optical, electronic and digital design of the goggle and its associated ETD chip and digital control, are presented.

a Portable Pixel Detector Operating as AN Active Nuclear Emulsion and its Application for X-Ray and Neutron Tomography

NASA Astrophysics Data System (ADS)

Vykydal, Z.; Jakubek, J.; Holy, T.; Pospisil, S.

2006-04-01

This work is devoted to the development of a USB1.1 (Universal Serial Bus) based read out system for the Medipix2 detector to achieve maximum portability of this position sensitive detecting device. All necessary detector support is integrated into one compact system (80 × 50 × 20 mm3) including the detector bias source (up to 100 V). The read out interface can control external I2C based devices, so in case of tomography it is easy to synchronize detector shutter with stepper motor control. An additional significant advantage of the USB interface is the support of back side pulse processing. This feature enables to determine the energy additionally to the position of a heavy charged particle hitting the sensor. Due to the small pixel dimensions it is also possible to distinguish the type of single quanta of radiation from the track created in the pixel detector as in case of an active nuclear emulsion.

How many pixels does it take to make a good 4"×6" print? Pixel count wars revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2011-01-01

In the early 1980's the future of conventional silver-halide photographic systems was of great concern due to the potential introduction of electronic imaging systems then typified by the Sony Mavica analog electronic camera. The focus was on the quality of film-based systems as expressed in the number of equivalent number pixels and bits-per-pixel, and how many pixels would be required to create an equivalent quality image from a digital camera. It was found that 35-mm frames, for ISO 100 color negative film, contained equivalent pixels of 12 microns for a total of 18 million pixels per frame (6 million pixels per layer) with about 6 bits of information per pixel; the introduction of new emulsion technology, tabular AgX grains, increased the value to 8 bit per pixel. Higher ISO speed films had larger equivalent pixels, fewer pixels per frame, but retained the 8 bits per pixel. Further work found that a high quality 3.5" x 5.25" print could be obtained from a three layer system containing 1300 x 1950 pixels per layer or about 7.6 million pixels in all. In short, it became clear that when a digital camera contained about 6 million pixels (in a single layer using a color filter array and appropriate image processing) that digital systems would challenge and replace conventional film-based system for the consumer market. By 2005 this became the reality. Since 2005 there has been a "pixel war" raging amongst digital camera makers. The question arises about just how many pixels are required and are all pixels equal? This paper will provide a practical look at how many pixels are needed for a good print based on the form factor of the sensor (sensor size) and the effective optical modulation transfer function (optical spread function) of the camera lens. Is it better to have 16 million, 5.7-micron pixels or 6 million 7.8-micron pixels? How does intrinsic (no electronic boost) ISO speed and exposure latitude vary with pixel size? A systematic review of these issues will be provided within the context of image quality and ISO speed models developed over the last 15 years.

Fifty Years of Lightning Observations from Space

NASA Astrophysics Data System (ADS)

Christian, H. J., Jr.

2017-12-01

Some of the earliest satellites, starting with OSO (1965), ARIEL (1967), and RAE (1968), detected lightning using either optical and RF sensors, although that was not their intent. One of the earliest instruments designed to detect lightning was the PBE (1977). The use of space to study lightning activity has exploded since these early days. The advent of focal-plane imaging arrays made it possible to develop high performance optical lightning sensors. Prior to the use of charged-coupled devices (CCD), most space-based lightning sensors used only a few photo-diodes, which limited the location accuracy and detection efficiency (DE) of the instruments. With CCDs, one can limit the field of view of each detector (pixel), and thus improve the signal to noise ratio over single-detectors that summed the light reflected from many clouds with the lightning produced by a single cloud. This pixelization enabled daytime DE to increase from a few percent to close to 90%. The OTD (1995), and the LIS (1997), were the first lightning sensors to utilize focal-plane arrays. Together they detected global lightning activity for more than twenty years, providing the first detailed information on the distribution of global lightning and its variability. The FORTE satellite was launched shortly after LIS, and became the first dedicated satellite to simultaneously measure RF and optical lightning emissions. It too used a CCD focal plane to detect and locate lightning. In November 2016, the GLM became the first lightning instrument in geostationary orbit. Shortly thereafter, China placed its GLI in orbit. Lightning sensors in geostationary orbit significantly increase the value of space-based observations. For the first time, lightning activity can be monitored continuously, over large areas of the Earth with high, uniform DE and location accuracy. In addition to observing standard lightning, a number of sensors have been placed in orbit to detect transient luminous events and tropospheric gamma-ray flashes. A lineal history of space-based lightning observations will be presented as well as a discussion of the scientific contributions made possible by these instruments. In addition, relative merits of space versus ground measurements will be addressed, as well as an effort to demonstrate the complementary nature of the two approaches.

Blob-level active-passive data fusion for Benthic classification

NASA Astrophysics Data System (ADS)

Park, Joong Yong; Kalluri, Hemanth; Mathur, Abhinav; Ramnath, Vinod; Kim, Minsu; Aitken, Jennifer; Tuell, Grady

2012-06-01

We extend the data fusion pixel level to the more semantically meaningful blob level, using the mean-shift algorithm to form labeled blobs having high similarity in the feature domain, and connectivity in the spatial domain. We have also developed Bhattacharyya Distance (BD) and rule-based classifiers, and have implemented these higher-level data fusion algorithms into the CZMIL Data Processing System. Applying these new algorithms to recent SHOALS and CASI data at Plymouth Harbor, Massachusetts, we achieved improved benthic classification accuracies over those produced with either single sensor, or pixel-level fusion strategies. These results appear to validate the hypothesis that classification accuracy may be generally improved by adopting higher spatial and semantic levels of fusion.

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

NASA Technical Reports Server (NTRS)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

Metallic magnetic calorimeters (MMC) are one of the most promising devices to provide very high energy resolution needed for future astronomical x-ray spectroscopy. MMC detectors can be built to large detector arrays having thousands of pixels. Position-sensitive magnetic (PoSM) microcalorimeters consist of multiple absorbers thermally coupled to one magnetic micro calorimeter. Each absorber element has a different thermal coupling to the MMC, resulting in a distribution of different pulse shapes and enabling position discrimination between the absorber elements. PoSMs therefore achieve the large focal plane area with fewer number of readout channels without compromising spatial sampling. Excellent performance of PoSMs was achieved by optimizing the designs of key parameters such as the thermal conductance among the absorbers, magnetic sensor, and heat sink, as well as the absorber heat capacities. Micro fab ri - cation techniques were developed to construct four-absorber PoSMs, in which each absorber consists of a two-layer composite of bismuth and gold. The energy resolution (FWHM full width at half maximum) was measured to be better than 5 eV at 6 keV x-rays for all four absorbers. Position determination was demonstrated with pulse-shape discrimination, as well as with pulse rise time. X-ray microcalorimeters are usually designed to thermalize as quickly as possible to avoid degradation in energy resolution from position dependence to the pulse shapes. Each pixel consists of an absorber and a temperature sensor, both decoupled from the cold bath through a weak thermal link. Each pixel requires a separate readout channel; for instance, with a SQUID (superconducting quantum interference device). For future astronomy missions where thousands to millions of resolution elements are required, having an individual SQUID readout channel for each pixel becomes difficult. One route to attaining these goals is a position-sensitive detector in which a large continuous or pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm) metal links. The strength of the links is parameterized by the number of gold squares making up the link. For detector performance, experimentally different pulse-shapes were demonstrated with 6 keV x-rays, which clearly show different rise times for different absorber positions. For energy resolution measurement, the PoSM was operated at 32 mK with an applied field that was generated using a persistent current of 50 mA. Over the four pixels, energy resolution ranges from 4.4 to 4.7 eV were demonstrated.

Cloud property datasets retrieved from AVHRR, MODIS, AATSR and MERIS in the framework of the Cloud_cci project

NASA Astrophysics Data System (ADS)

Stengel, Martin; Stapelberg, Stefan; Sus, Oliver; Schlundt, Cornelia; Poulsen, Caroline; Thomas, Gareth; Christensen, Matthew; Carbajal Henken, Cintia; Preusker, Rene; Fischer, Jürgen; Devasthale, Abhay; Willén, Ulrika; Karlsson, Karl-Göran; McGarragh, Gregory R.; Proud, Simon; Povey, Adam C.; Grainger, Roy G.; Fokke Meirink, Jan; Feofilov, Artem; Bennartz, Ralf; Bojanowski, Jedrzej S.; Hollmann, Rainer

2017-11-01

New cloud property datasets based on measurements from the passive imaging satellite sensors AVHRR, MODIS, ATSR2, AATSR and MERIS are presented. Two retrieval systems were developed that include components for cloud detection and cloud typing followed by cloud property retrievals based on the optimal estimation (OE) technique. The OE-based retrievals are applied to simultaneously retrieve cloud-top pressure, cloud particle effective radius and cloud optical thickness using measurements at visible, near-infrared and thermal infrared wavelengths, which ensures spectral consistency. The retrieved cloud properties are further processed to derive cloud-top height, cloud-top temperature, cloud liquid water path, cloud ice water path and spectral cloud albedo. The Cloud_cci products are pixel-based retrievals, daily composites of those on a global equal-angle latitude-longitude grid, and monthly cloud properties such as averages, standard deviations and histograms, also on a global grid. All products include rigorous propagation of the retrieval and sampling uncertainties. Grouping the orbital properties of the sensor families, six datasets have been defined, which are named AVHRR-AM, AVHRR-PM, MODIS-Terra, MODIS-Aqua, ATSR2-AATSR and MERIS+AATSR, each comprising a specific subset of all available sensors. The individual characteristics of the datasets are presented together with a summary of the retrieval systems and measurement records on which the dataset generation were based. Example validation results are given, based on comparisons to well-established reference observations, which demonstrate the good quality of the data. In particular the ensured spectral consistency and the rigorous uncertainty propagation through all processing levels can be considered as new features of the Cloud_cci datasets compared to existing datasets. In addition, the consistency among the individual datasets allows for a potential combination of them as well as facilitates studies on the impact of temporal sampling and spatial resolution on cloud climatologies.

For each dataset a digital object identifier has been issued:

Cloud_cci AVHRR-AM: https://doi.org/10.5676/DWD/ESA_Cloud_cci/AVHRR-AM/V002

Cloud_cci AVHRR-PM: https://doi.org/10.5676/DWD/ESA_Cloud_cci/AVHRR-PM/V002

Cloud_cci MODIS-Terra: https://doi.org/10.5676/DWD/ESA_Cloud_cci/MODIS-Terra/V002

Cloud_cci MODIS-Aqua: https://doi.org/10.5676/DWD/ESA_Cloud_cci/MODIS-Aqua/V002

Cloud_cci ATSR2-AATSR: https://doi.org/10.5676/DWD/ESA_Cloud_cci/ATSR2-AATSR/V002

Cloud_cci MERIS+AATSR: https://doi.org/10.5676/DWD/ESA_Cloud_cci/MERIS+AATSR/V002

A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

2015-01-01

The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

Resolution studies with the DATURA beam telescope

NASA Astrophysics Data System (ADS)

Jansen, H.

2016-12-01

Detailed studies of the resolution of a EUDET-type beam telescope are carried out using the DATURA beam telescope as an example. The EUDET-type beam telescopes make use of CMOS MIMOSA 26 pixel detectors for particle tracking allowing for precise characterisation of particle-sensing devices. A profound understanding of the performance of the beam telescope as a whole is obtained by a detailed characterisation of the sensors themselves. The differential intrinsic resolution as measured in a MIMOSA 26 sensor is extracted using an iterative pull method, and various quantities that depend on the size of the cluster produced by a traversing charged particle are discussed: the residual distribution, the intra-pixel residual-width distribution and the intra-pixel density distribution of track incident positions.

The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

NASA Astrophysics Data System (ADS)

Schaefer, D. M.; ATLAS Collaboration

2016-07-01

After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

Wavefront sensing in space: flight demonstration II of the PICTURE sounding rocket payload

NASA Astrophysics Data System (ADS)

Douglas, Ewan S.; Mendillo, Christopher B.; Cook, Timothy A.; Cahoy, Kerri L.; Chakrabarti, Supriya

2018-01-01

A NASA sounding rocket for high-contrast imaging with a visible nulling coronagraph, the Planet Imaging Concept Testbed Using a Rocket Experiment (PICTURE) payload, has made two suborbital attempts to observe the warm dust disk inferred around Epsilon Eridani. The first flight in 2011 demonstrated a 5 mas fine pointing system in space. The reduced flight data from the second launch, on November 25, 2015, presented herein, demonstrate active sensing of wavefront phase in space. Despite several anomalies in flight, postfacto reduction phase stepping interferometer data provide insight into the wavefront sensing precision and the system stability for a portion of the pupil. These measurements show the actuation of a 32 × 32-actuator microelectromechanical system deformable mirror. The wavefront sensor reached a median precision of 1.4 nm per pixel, with 95% of samples between 0.8 and 12.0 nm per pixel. The median system stability, including telescope and coronagraph wavefront errors other than tip, tilt, and piston, was 3.6 nm per pixel, with 95% of samples between 1.2 and 23.7 nm per pixel.

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

AEDC Sensor T&E Methodology

DTIC Science & Technology

1995-07-01

designated pixel. OTF analysis will be similar to the analysis discussed previously. Any nonuniformity in the response of the chosen pixel to the...not seen by the trace. Nonuniformity of the pixel response must be also be taken into account. Background measurements of the maximum and minimum...to the background field of regard. To incorporate and support interactive CLDWSG operation and to accommodate simulation of nonuniform anisoplanatic

A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

PubMed

Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

2015-09-01

The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

4K x 2K pixel color video pickup system

NASA Astrophysics Data System (ADS)

Sugawara, Masayuki; Mitani, Kohji; Shimamoto, Hiroshi; Fujita, Yoshihiro; Yuyama, Ichiro; Itakura, Keijirou

1998-12-01

This paper describes the development of an experimental super- high-definition color video camera system. During the past several years there has been much interest in super-high- definition images as the next generation image media. One of the difficulties in implementing a super-high-definition motion imaging system is constructing the image-capturing section (camera). Even the state-of-the-art semiconductor technology can not realize the image sensor which has enough pixels and output data rate for super-high-definition images. The present study is an attempt to fill the gap in this respect. The authors intend to solve the problem by using new imaging method in which four HDTV sensors are attached on a new color separation optics so that their pixel sample pattern forms checkerboard pattern. A series of imaging experiments demonstrate that this technique is an effective approach to capturing super-high-definition moving images in the present situation where no image sensors exist for such images.

Satellite-Sensor Calibration Verification Using the Cloud-Shadow Method

NASA Technical Reports Server (NTRS)

Reinersman, P.; Carder, K. L.; Chen, F. R.

1995-01-01

An atmospheric-correction method which uses cloud-shaded pixels together with pixels in a neighboring region of similar optical properties is described. This cloud-shadow method uses the difference between the total radiance values observed at the sensor for these two regions, thus removing the nearly identical atmospheric radiance contributions to the two signals (e.g. path radiance and Fresnel-reflected skylight). What remains is largely due to solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by the direct solar irradiance reaching the sea surface and correction for some second-order effects provides the remote-sensing reflectance of the ocean at the location of the neighbor region, providing a known 'ground target' spectrum for use in testing the calibration of the sensor. A similar approach may be useful for land targets if horizontal homogeneity of scene reflectance exists about the shadow. Monte Carlo calculations have been used to correct for adjacency effects and to estimate the differences in the skylight reaching the shadowed and neighbor pixels.

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu

We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energymore » resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.« less

Carbon nanotube active-matrix backplanes for conformal electronics and sensors.

PubMed

Takahashi, Toshitake; Takei, Kuniharu; Gillies, Andrew G; Fearing, Ronald S; Javey, Ali

2011-12-14

In this paper, we report a promising approach for fabricating large-scale flexible and stretchable electronics using a semiconductor-enriched carbon nanotube solution. Uniform semiconducting nanotube networks with superb electrical properties (mobility of ∼20 cm2 V(-1) s(-1) and ION/IOFF of ∼10(4)) are obtained on polyimide substrates. The substrate is made stretchable by laser cutting a honeycomb mesh structure, which combined with nanotube-network transistors enables highly robust conformal electronic devices with minimal device-to-device stochastic variations. The utility of this device concept is demonstrated by fabricating an active-matrix backplane (12×8 pixels, physical size of 6×4 cm2) for pressure mapping using a pressure sensitive rubber as the sensor element.