CuGaS₂ and CuGaS₂-ZnS Porous Layers from Solution-Processed Nanocrystals.

PubMed

Berestok, Taisiia; Guardia, Pablo; Estradé, Sònia; Llorca, Jordi; Peiró, Francesca; Cabot, Andreu; Brock, Stephanie L

2018-04-05

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS₂ (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS-ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

Slow-muon study of quaternary solar-cell materials: Single layers and p -n junctions

NASA Astrophysics Data System (ADS)

Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; da Cunha, A. F.; Leitão, J. P.; Salomé, P. M. P.; Fernandes, P. A.; Törndahl, T.; Prokscha, T.; Suter, A.; Salman, Z.

2018-02-01

Thin films and p -n junctions for solar cells based on the absorber materials Cu (In ,G a ) Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu (In ,G a ) Se2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.

Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

PubMed

Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

2015-10-14

A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

2017-07-01

Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

PubMed Central

Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

2018-01-01

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guiqin; Gao, Xiaoze; Li, Jinfu

2015-01-07

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out thatmore » the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.« less

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

The synergistic effect of micro/nano-structured and Cu2+-doped hydroxyapatite particles to promote osteoblast viability and antibacterial activity.

PubMed

Shi, Feng; Liu, Yumei; Zhi, Wei; Xiao, Dongqin; Li, Hongyu; Duan, Ke; Qu, Shuxin; Weng, Jie

2017-06-06

Microstructure and chemical constitution are important factors affecting the biological activity of biomaterials. This study aimed to fabricate hydroxyapatite (HAp) particles with both micro/nanohybrid structure and Cu 2+ doping to promote osteogenic differentiation and antibacterial property. In the presence of inositol hexakisphosphate (IP6), micro/nano-structured and Cu 2+ -doped HAp (HAp-IP6-Cu) microspheres were successfully fabricated via hydrothermal method. Morphological observation showed that HAp-IP6-Cu microspheres with a diameter of 3.1-4.1 μm were chrysanthemum-like and composed of nano-flakes approximately 50 nm in thickness. Compared with the HAp micro-rods or IP6 modified HAp (HAp-IP6) microspheres, HAp-IP6-Cu microspheres had a larger specific surface area, better hydrophilicity and stronger ability to adsorb bovine serum albumin. To evaluate the synergistic effects of micro/nanohybrid structure and Cu 2+ on cell behavior, rat calvarial osteoblasts (RCOs) were cultured on HAp-IP6-Cu, HAp-IP6 and HAp layers as well as their extracts, respectively. Results demonstrated that HAp-IP6-Cu layer promoted the adhesion, proliferation and osteogenic differentiation of RCOs. The cells grew on HAp-IP6-Cu and HAp-IP6 layers exhibited greater spreading than those on HAp layer. In addition, quantitative test by the agar disk diffusion technique found that HAp-IP6-Cu microspheres were effectively against S taphylococcus aureus and E scherichia coli. These results demonstrated that HAp-IP6-Cu microspheres may be a potential candidate as a bioactive and anti-infective biomaterial for bone regeneration.

Pulse electro-deposition of copper on molybdenum for Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cell applications

NASA Astrophysics Data System (ADS)

Bi, Jinlian; Yao, Liyong; Ao, Jianping; Gao, Shoushuai; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2016-09-01

The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO4 solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization, which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5 mA cm-2, pulse frequency @100,000 Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.

Lithium Nitride Synthesized by in situ Lithium Deposition and Ion Implantation for Boron Neutron Capture Therapy

NASA Astrophysics Data System (ADS)

Ishitama, Shintaro; Baba, Yuji; Fujii, Ryo; Nakamura, Masaru; Imahori, Yoshio

Li3N synthesis on Li deposition layer was conducted without H2O and O2 by in situ lithium deposition in high vacuum chamber of 10-6 Pa and ion implantation techniques and the thermo-chemical stability of the Li3N/Li/Cu tri-layered target for Boron Neutron Capture Therapy (BNCT) under laser heating and air exposure was characterized by X-ray photoelectron spectroscopy (XPS). Following conclusions were derived; (1) Li3N/Li/Cu tri-layered target with very low oxide and carbon contamination was synthesized by in situ lithium vacuum deposition and N2+ ion implantation without H2O and O2 additions, (2) The starting temperature of evaporation of Li3N/Li/Cu tri-layered target increased by 120K compared to that of the Li/Cu target and (3) Remarkable oxidation and carbon contamination were observed on the surface of Li3N/Li/Cu after air exposure and these contaminated compositions was not removed by Ar+ heavy sputtering.

Spin-Transfer Studies in Magnetic Multilayer Nanostructures

NASA Astrophysics Data System (ADS)

Emley, N. C.; Albert, F. J.; Ryan, E. M.; Krivorotov, I. N.; Ralph, D. C.; Buhrman, R. A.

2003-03-01

Numerous experiments have demonstrated current-induced magnetization reversal in ferromagnet/paramagnet/ferromagnet nanostructures with the current in the CPP geometry. The primary mechanism for this reversal is the transfer of angular momentum from the spin-polarized conduction electrons to the nanomagnet moment the spin transfer effect. This phenomenon has potential application in nanoscale, current-controlled non-volatile memory elements, but several challenges must be overcome for realistic device implementation. Typical Co/Cu/Co nanopillar devices, although effective for fundamental studies, are not advantageous for technological applications because of their large switching currents Ic ( 3-10 mA) and small R·A (< 1 mΩ·µm^2). Here we report initial results testing some possible approaches for enhancing spin-transfer device performance which involve the addition of more layers, and hence, more complexity, to the simple Co/Cu/Co trilayer structure. These additions include synthetic antiferromagnet layers (SAF), exchange biased layers, nano-oxide layers (NOL), and additional magnetic layers. Research supported by NSF and DARPA

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms.

PubMed

Koenig, Steven P; Doganov, Rostislav A; Seixas, Leandro; Carvalho, Alexandra; Tan, Jun You; Watanabe, Kenji; Taniguchi, Takashi; Yakovlev, Nikolai; Castro Neto, Antonio H; Özyilmaz, Barbaros

2016-04-13

Few-layer black phosphorus is a monatomic two-dimensional crystal with a direct band gap that has high carrier mobility for both holes and electrons. Similarly to other layered atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is sensitive to surface impurities, adsorbates, and adatoms. Here we study the effect of Cu adatoms onto few-layer black phosphorus by characterizing few-layer black phosphorus field effect devices and by performing first-principles calculations. We find that the addition of Cu adatoms can be used to controllably n-dope few layer black phosphorus, thereby lowering the threshold voltage for n-type conduction without degrading the transport properties. We demonstrate a scalable 2D material-based complementary inverter which utilizes a boron nitride gate dielectric, a graphite gate, and a single bP crystal for both the p- and n-channels. The inverter operates at matched input and output voltages, exhibits a gain of 46, and does not require different contact metals or local electrostatic gating.

``Loose spins'' in Fe/Cu/Fe(001) structures

NASA Astrophysics Data System (ADS)

Heinrich, B.; Celinski, Z.; Liao, L. X.; From, M.; Cochran, J. F.

1994-05-01

Slonczewski recently proposed a model for the exchange coupling between ferromagnetic layers separated by a nonferromagnetic spacer based on the concept of ``loose spins.'' ``Loose spins'' contribute to the total exchange energy. We have studied the role of ``loose spins'' in bcc Fe/Cu/Fe(001) structures. bcc Fe/Cu/Fe(001) trilayers deposited at room temperature were investigated extensively in our previous studies. In our ``loose spin'' studies, the Fe was added inside the Cu interlayer. Several structures were atomically engineered in order to test the behavior of ``loose spins:'' One additional atomic layer of an (Fe+Cu) alloy were located in appropriate positions in a Cu spacer. The bilinear and biquadratic exchange coupling in the above structures was quantitatively studied with FMR in the temperature range 77-370 K and with MOKE at RT.

Nickel electroplating on copper pre-activated Al alloy in the electrolyte containing PEG1000 as an additive

NASA Astrophysics Data System (ADS)

Guan, Jie; Wang, Jinwei; Zhang, Dawei

2018-06-01

Ni coatings are prepared on Cu-pretreated anodic Al alloy by electroplating technique in environment-friendly electrolytes with PEG1000 as an additive. Some defects like pores, cracks and even uncovered areas are observed for the sample of the Cu-pretreated anodic Al alloy, and these defects seem to be remedied with the following Ni electroplating as observed from their SEM images; while the covering effect of Ni onto the Cu layer is rather limited as judged by their corrosion current data of polarization test. After adding PEG1000 in the Ni electroplating electrolyte, the obtained coating surfaces are seen smoother and thicker; and most of the tiny particles are seen closely packed together with some bigger particles on them. The diffusion of nickel particles into copper layer are confirmed by the line and mapping mode of EDS element analysis for the Ni-Cu composite coating. Their much lower corrosion current density ( I corr) and higher micro-hardness support the fact that the addition of PEG1000 in Ni plating electrolyte has a function of promoting the refinement of Ni particles and the formation of more compacter, thicker and smoother Ni-Cu composite coating.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

Effects of CuZnAl Particles on Properties and Microstructure of Sn-58Bi Solder

PubMed Central

Yang, Fan; Zhang, Liang; Liu, Zhi-quan; Zhong, Su Juan; Ma, Jia; Bao, Li

2017-01-01

With the purpose of improving the properties of the Sn-58Bi lead-free solder, micro-CuZnAl particles ranging from 0 to 0.4 wt % were added into the low temperature eutectic Sn-58Bi lead-free solder. After the experimental testing of micro-CuZnAl particles on the properties and microstructure of the Sn-58Bi solders, it was found that the wettability of the Sn-58Bi solders was obviously improved with addition of CuZnAl particles. When the addition of CuZnAl particles was 0.2 wt %, the wettability of the Sn-58Bi solder performed best. At the same time, excessive addition of CuZnAl particles led to poor wettability. However, the results showed that CuZnAl particles changed the melting point of the Sn-58Bi solder slightly. The microstructure of the Sn-58Bi solder was refined by adding CuZnAl particles. When the content of CuZnAl addition was between 0.1 and 0.2 wt %, the refinement was great. In addition, the interfacial IMC layer between new composite solder and Cu substrate was thinner than that between the Sn-58Bi solder and Cu substrate. PMID:28772917

An efficient copper phthalocyanine additive of perovskite precursor for improving the photovoltaic performance of planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Wu, Shufang; Liu, Qingwei; Zheng, Ya; Li, Renjie; Peng, Tianyou

2017-08-01

Solution processable planar heterojunction perovskite solar cell has drawn much attention as a promising low-cost photovoltaic device, and much effort has been made to improve its power conversion efficiency by choosing appropriate additives for the perovskite precursor solution. Different to those additives reported, a soluble and thermal stable tert-butyl substituted copper phthalocyanine (CuPc(tBu)4) as additive is first introduced into the perovskite precursor solution of a planar perovskite solar cell that is fabricated via the one-step solution process. It is found that the pristine device without CuPc(tBu)4 additive exhibits a power conversion efficiency of 15.3%, while an extremely low concentration (4.4 × 10-3 mM) of CuPc(tBu)4 in the precursor solution leads to the corresponding device achieving an enhanced power conversion efficiency of 17.3%. CuPc(tBu)4 as an additive can improve the quality of perovskite layer with higher crystallinity and surface coverage, then resulting in enhanced light absorption and reduced charge recombination, and thus the better power conversion efficiency. The finding presented here provides a new choice for improving the quality of perovskite layer and the photovoltaic performance of the planar heterojunction perovskite solar cells.

Electrical and magnetic properties of conductive Cu-based coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

2003-11-01

The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

Crystal structure across the β to α phase transition in thermoelectric Cu 2–xSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eikeland, Espen; Blichfeld, Anders B.; Borup, Kasper A.

Here, the crystal structure uniquely imparts the specific properties of a material, and thus provides the starting point for any quantitative understanding of thermoelectric properties. Cu 2–xSe is an intensely studied high performing, non-toxic and cheap thermoelectric material, and here for the first time, the average structure of β-Cu 2–xSe is reported based on analysis of multi-temperature single-crystal X-ray diffraction data. It consists of Se–Cu layers with additional copper between every alternate layer. The structural changes during the peculiar zT enhancing phase transition mainly consist of changes in the inter-layer distance coupled with subtle Cu migration. Just prior to themore » transition the structure exhibits strong negative thermal expansion due to the reordering of Cu atoms, when approached from low temperatures. The phase transition is fully reversible and group–subgroup symmetry relations are derived that relate the low-temperature β-phase to the high-temperature α-phase. Weak superstructure reflections are observed and a possible Cu ordering is proposed. The structural rearrangement may have a significant impact on the band structure and the Cu rearrangement may also be linked to an entropy increase. Both factors potentially contribute to the extraordinary zT enhancement across the phase transition.« less

Crystal structure across the β to α phase transition in thermoelectric Cu 2–xSe

DOE PAGES

Eikeland, Espen; Blichfeld, Anders B.; Borup, Kasper A.; ...

2017-06-13

Here, the crystal structure uniquely imparts the specific properties of a material, and thus provides the starting point for any quantitative understanding of thermoelectric properties. Cu 2–xSe is an intensely studied high performing, non-toxic and cheap thermoelectric material, and here for the first time, the average structure of β-Cu 2–xSe is reported based on analysis of multi-temperature single-crystal X-ray diffraction data. It consists of Se–Cu layers with additional copper between every alternate layer. The structural changes during the peculiar zT enhancing phase transition mainly consist of changes in the inter-layer distance coupled with subtle Cu migration. Just prior to themore » transition the structure exhibits strong negative thermal expansion due to the reordering of Cu atoms, when approached from low temperatures. The phase transition is fully reversible and group–subgroup symmetry relations are derived that relate the low-temperature β-phase to the high-temperature α-phase. Weak superstructure reflections are observed and a possible Cu ordering is proposed. The structural rearrangement may have a significant impact on the band structure and the Cu rearrangement may also be linked to an entropy increase. Both factors potentially contribute to the extraordinary zT enhancement across the phase transition.« less

Photocatalytic property and structural stability of CuAl-based layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Ming; Liu, Haiqiang, E-mail: Liuhaiqiang1980@126.com

2015-07-15

Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) were successfully synthesized by coprecipitation. Powder X-ray diffraction (XRD), inductively coupled plasma atomic emission spectrometry (ICP-AES) and UV–Vis diffuse reflectance spectrum (UV–vis) were used to confirm the formation of as-synthesized solids with good crystal structure. The photocatalytic activity of those LDH materials for CO{sub 2} reduction under visible light was investigated. The experimental results show that CuNiAl-LDHs with narrowest band gap and largest surface areas behave highest efficiency for methanol generation under visible light compared with CuMgAl-LDHs and CuZnAl-LDHs. The CuNiAL-LDH showed high yield for methanol production i.e. 0.210more » mmol/g h, which was high efficient. In addition, the influence of the different M{sup 2+} on the structures and stability of the CuMAl-LDHs was also investigated by analyzing the geometric parameters, electronic arrangement, charge populations, hydrogen-bonding, and binding energies by density functional theory (DFT) analysis. The theoretical calculation results show that the chemical stability of LDH materials followed the order of CuMgAl-LDHs>CuZnAl-LDHs>CuNiAl-LDHs, which is just opposite with the photocatalytic activity and band gaps of three materials. - Graphical abstract: The host–guest calculation models and XRD patterns of CuMAl-LDHs: CuMgAl-LDHs (a), CuZnAl-LDHs (b) and CuNiAl-LDHs (c). - Highlights: • Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) has been synthesized. • CuMgNi shows narrower band gap and more excellent textural properties than other LDHs. • The band gap: CuMgAl« less

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

NASA Astrophysics Data System (ADS)

Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

2018-01-01

The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

Influence of Li Addition to Zn-Al Alloys on Cu Substrate During Spreading Test and After Aging Treatment

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Pstrus, Janusz; Cempura, Grzegorz; Berent, Katarzyna

2016-12-01

The spreading of Zn-Al eutectic-based alloys with 0.05 wt.%, 0.1 wt.%, and 0.2 wt.% Li on Cu substrate has been studied using the sessile drop method in presence of QJ201 flux. Wetting tests were performed after 1 min, 3 min, 8 min, 15 min, 30 min, and 60 min of contact at temperatures of 475°C, 500°C, 525°C, and 550°C. Samples after spreading at 500°C for 1 min were subjected to aging for 1 day, 10 days, and 30 days at temperature of 120°C, 170°C, and 250°C. The spreadability of eutectic Zn-5.3Al alloy with different Li contents on Cu substrate was determined in accordance with ISO 9455-10:2013-03. Selected solidified solder-substrate couples were, after spreading and aging tests, cross-sectioned and subjected to scanning electron microscopy, energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) analysis of the interfacial microstructure. An experiment was designed to demonstrate the effect of Li addition on the kinetics of the formation and growth of CuZn, Cu5Zn8, and CuZn4 intermetallic compound (IMC) phases, during spreading and aging. The IMC layers formed at the interface were identified using XRD and EDS analyses. Increasing addition of Li to Zn-Al alloy caused a reduction in the thickness of the IMC layer at the interface during spreading, and an increase during aging. The activation energy was calculated, being found to increase for the Cu5Zn8 phase but decrease for the CuZn and CuZn4 phases with increasing Li content in the Zn-Al-Li alloys. The highest value of 142 kJ mol-1 was obtained for Zn-Al with 1.0 Li during spreading and 69.2 kJ mol-1 for Zn-Al with 0.05 Li during aging. Aging at 250°C caused an increase in only the Cu5Zn8 layer, which has the lowest Gibbs energy in the Cu-Zn system. This result is connected to the high diffusion of Cu from the substrate to the solder.

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

PubMed

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

Production and Precipitation Hardening of Beta-Type Ti-35Nb-10Cu Alloy Foam for Implant Applications

NASA Astrophysics Data System (ADS)

Mutlu, Ilven; Yeniyol, Sinem; Oktay, Enver

2016-04-01

In this study, beta-type Ti-35Nb-10Cu alloy foams were produced by powder metallurgy method for dental implant applications. 35% Nb was added to stabilize the beta-Ti phase with low Young's modulus. Cu addition enhanced sinterability and gave precipitation hardening capacity to the alloy. Sintered specimens were precipitation hardened in order to enhance the mechanical properties. Electrochemical corrosion behavior of the specimens was examined by electrochemical impedance spectroscopy in artificial saliva. Electrochemical impedance spectroscopy results indicated that the oxide film on the surface of foam is a bi-layer structure consisting of outer porous layer and inner barrier layer. Impedance values of barrier layer were higher than porous layer. Corrosion resistance of specimens decreased at high fluoride concentrations and at low pH of artificial saliva. Corrosion resistance of alloys was slightly decreased with aging. Mechanical properties, microstructure, and surface roughness of the specimens were also examined.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

NASA Astrophysics Data System (ADS)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

Dendritic Ni(Cu)-polypyrrole hybrid films for a pseudo-capacitor.

PubMed

Choi, Bit Na; Chun, Woo Won; Qian, Aniu; Lee, So Jeong; Chung, Chan-Hwa

2015-11-28

Dendritic Ni(Cu)-polypyrrole hybrid films are fabricated for a pseudo-capacitor in a unique morphology using two simple methods: electro-deposition and electrochemical de-alloying. Three-dimensional structures of porous dendrites are prepared by electro-deposition within the hydrogen evolution reaction (HER) at a high cathodic potential; the high-surface-area structure provides sufficient redox reactions between the electrodes and the electrolyte. The dependence of the active-layer thickness on the super-capacitor performance is also investigated, and the 60 μm-thick Ni(Cu)PPy hybrid electrode presents the highest performance of 659.52 F g(-1) at the scan rate of 5 mV s(-1). In the thicker layers, the specific capacitance became smaller due to the diffusion limitation of the ions in an electrolyte. The polypyrrole-hybridization on the porous dendritic Ni(Cu) electrode provides superior specific capacitance and excellent cycling stability due to the improvement in electric conductivity by the addition of conducting polypyrrole in the matrices of the dendritic nano-porous Ni(Cu) layer and the synergistic effect of composite materials.

A comprehensive study of magnetic exchanges in the layered oxychalcogenides Sr 3 Fe 2 O 5 Cu 2 Q 2 ( Q = S, Se)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lü, Minfeng; Mentré, Olivier; Gordon, Elijah E.

2017-12-01

The layered oxysulfide Sr3Fe2O5Cu2S2 was prepared, and its crystal structure and magnetic properties were characterized by synchrotron X-ray diffraction (XRD), powder neutron diffraction (PND), Mössbauer spectroscopy measurements and by density functional theory (DFT) calculations. In addition, the spin exchange interactions leading to the ordered magnetic structure of Sr3Fe2O5Cu2S2 were compared with those of its selenium analogue Sr3Fe2O5Cu2Se2. The oxysulfide Sr3Fe2O5Cu2S2 adopts a G-type antiferromagnetic (AFM) structure at a temperature in the range 485–512 K, which is comparable with the three-dimensional (3D) AFM ordering temperature, TN ≈ 490 K, found for Sr3Fe2O5Cu2Se2. Consistent with this observation, the spin exchange interactions ofmore » the magnetic (Sr3Fe2O5)2+ layers are slightly greater (but comparable) for oxysulfide than for the oxyselenide. Attempts to reduce or oxidize Sr3Fe2O5Cu2S2 using topochemical routes yield metallic Fe.« less

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties.

PubMed

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H 2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV-visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties.

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties

NASA Astrophysics Data System (ADS)

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV-visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Surface chemistry of copper metal and copper oxide atomic layer deposition from copper(ii) acetylacetonate: a combined first-principles and reactive molecular dynamics study.

PubMed

Hu, Xiao; Schuster, Jörg; Schulz, Stefan E; Gessner, Thomas

2015-10-28

Atomistic mechanisms for the atomic layer deposition using the Cu(acac)2 (acac = acetylacetonate) precursor are studied using first-principles calculations and reactive molecular dynamics simulations. The results show that Cu(acac)2 chemisorbs on the hollow site of the Cu(110) surface and decomposes easily into a Cu atom and the acac-ligands. A sequential dissociation and reduction of the Cu precursor [Cu(acac)2 → Cu(acac) → Cu] are observed. Further decomposition of the acac-ligand is unfavorable on the Cu surface. Thus additional adsorption of the precursors may be blocked by adsorbed ligands. Molecular hydrogen is found to be nonreactive towards Cu(acac)2 on Cu(110), whereas individual H atoms easily lead to bond breaking in the Cu precursor upon impact, and thus release the surface ligands into the gas-phase. On the other hand, water reacts with Cu(acac)2 on a Cu2O substrate through a ligand-exchange reaction, which produces gaseous H(acac) and surface OH species. Combustion reactions with the main by-products CO2 and H2O are observed during the reaction between Cu(acac)2 and ozone on the CuO surface. The reactivity of different co-reactants toward Cu(acac)2 follows the order H > O3 > H2O.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Effect of Ag Addition on the Electrochemical Performance of Cu10Al in Artificial Saliva

PubMed Central

Salgado-Salgado, R. J.; Sotelo-Mazon, O.; Rodriguez-Diaz, R. A.; Salinas-Solano, G.

2016-01-01

In this work we proposed to evaluate the corrosion resistance of four different alloys by electrochemical techniques, a binary alloy Cu10Al, and three ternary alloys Cu10Al-xAg (x = 5, 10, and 15 wt.%) to be used like biomaterials in dental application. Biomaterials proposed were tested in artificial saliva at 37°C for 48 h. In addition, pure metals Cu, Al, Ag, and Ti as reference materials were evaluated. In general the short time tests indicated that the Ag addition increases the corrosion resistance and reduces the extent of localized attack of the binary alloy. Moreover, tests for 48 hours showed that the Ag addition increases the stability of the passive layer, thereby reducing the corrosion rate of the binary alloy. SEM analysis showed that Cu10Al alloy was preferably corroded by grain boundaries, and the Ag addition modified the form of attack of the binary alloy. Cu-rich phases reacted with SCN− anions forming a film of CuSCN, and the Ag-rich phase is prone to react with SCN− anions forming AgSCN. Thus, binary and ternary alloys are susceptible to tarnish in the presence of thiocyanate ions. PMID:27660601

Site-selective doping and superconductivity in (La1-yPry)(Ba2-xLax)Cu3O7+δ

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feffer, P. T.; Newsam, J. M.; Webb, D. J.; Klavins, P.; Jacobson, A. J.; Kapitulnik, A.

1988-10-01

Samples in the quaternary system (La1-yPry)(Ba2-xLax)Cu3O7+δ have been prepared and characterized using x-ray and neutron diffraction, thermogravimetric analysis, and transport and magnetic measurements. Pr substitutes on the oxygen-depleted La layers for y>0.0, while La substitutes on the Ba sites for x>0.0. The effect of doping on each site is inferred to be primarily local, affecting immediately adjacent Cu-O layers. The similar suppression of superconductivity that accompanies doping on each of the two distinct sites apparently correlates with the degree of oxidation of the Cu-O sheets (and not the chains), indicating that the sheets support the high temperature superconductivity. Comparison of orthorhombic and tetragonal samples with similar Ba:La ratios (and y=0) demonstrates that the orthorhombic phase yields the largest Meissner signals and highest transition temperatures in the La(Ba2-xLax)Cu3O7+δ system. The effect on superconductivity of oxygen-vacancy configuration in the Cu-O chain layers is proposed to derive, indirectly, from their influence on the Cu-O sheets. In addition, optimally superconducting La(Ba2-xLax)Cu3O7+δ samples exhibit interesting normal-state magnetic properties, with a paramagnetic susceptibility that decreases steadily with temperature between 350 K and Tc.

An investigation on the electrochemical behavior of the Co/Cu multilayer system.

PubMed

Mahshid, S S; Dolati, A

2010-09-01

Co/Cu multilayers were deposited in a sulfate solution by controlling the current and potential for the deposition of cobalt and copper layer respectively. The electrochemical behavior of these multilayers was studied by cyclic voltammetry and current transients. In addition, a mathematical analysis was used to characterize the electrodeposition system. Simultaneously, the nucleation and growth mechanisms were monitored by these techniques. In this case, the results clearly showed that electrodeposition of cobalt layers was a kinetically controlled process while the reduction of copper ions was a diffusion-control process. Although nucleation mechanism of the single Co deposit was found as a progressive system, it was found as an instantaneous system with three-dimensional growth mechanism in the Co/Cu bilayer deposition. Atomic Forced Microscopy images of the Co/Cu multilayer also confirmed the aforementioned nucleation mechanism, where it was expected that the growth of multilayer films would form a laminar-type structure containing a large number of equally-sized rounded grains in each layer.

CeO2-CuO/Cu2O/Cu monolithic catalysts with three-kind morphologies Cu2O layers for preferential CO oxidation

NASA Astrophysics Data System (ADS)

Jing, Guojuan; Zhang, Xuejiao; Zhang, Aiai; Li, Meng; Zeng, Shanghong; Xu, Changjin; Su, Haiquan

2018-03-01

The supports of copper slices with three-kind morphologies Cu2O layers were prepared by the hydrothermal method. The Cu2O layers are rod-like structure, three-dimensional reticular and porous morphology as well as flower-like morphology, respectively. The CeO2-CuO/Cu2O/Cu monolithic catalysts present porous and network structure or foam morphology after loading CeO2 and CuO. Cu and Ce elements are uniformly dispersed onto the support surface. It is found that the monolithic catalyst with flower-like Cu2O layer displays better low-temperature activity because of highly-dispersed CuO and high Olatt concentration. The monolithic catalysts with rod-like or reticular-morphology Cu2O layers present high-temperature activity due to larger CuO crystallite sizes and good synergistic effect at copper-ceria interfacial sites. The as-prepared CeO2-CuO/Cu2O/Cu monolithic catalysts show good performance in the CO-PROX reaction. The generation of Cu2O layers with three-kind morphologies is beneficial to the loading and dispersion of copper oxides and ceria.

[XPS analysis of beads formed by fuse breaking of electric copper wire].

PubMed

Wu, Ying; Meng, Qing-Shan; Wang, Xin-Ming; Gao, Wei; Di, Man

2010-05-01

The in-depth composition of beads formed by fuse breaking of the electric copper wire in different circumstances was studied by XPS with Ar+ ion sputtering. In addition, the measured Auger spectra and the calculated Auger parameters were compared for differentiation of the substances of Cu and Cu2O. Corresponding to the sputtering depth, the molten product on a bead induced directly by fuse breaking of the copper wire without cover may be distinguished as three portions: surface layer with a drastic decrease in carbon content; intermediate layer with a gentle change in oxygen content and gradually diminished carbon peak, and consisting of Cu2O; transition layer without Cu2O and with a rapid decrease in oxygen content. While the molten product on a bead formed by fuse breaking of the copper wire after its insulating cover had been burned out may be distinguished as two portions: surface layer with carbon content decreasing quickly; subsurface layer without Cu2O and with carbon and oxygen content decreasing gradually. Thus, it can be seen that there was an obvious interface between the layered surface product and the substrate for the first type of bead, while as to the second type of bead there was no interface. As a result, the presence of Cu2O and the quantitative results can be used to identify the molten product on a bead induced directly by fuse breaking of the copper wire without cover and the molten product on a bead formed by fuse breaking of the cupper wire after its insulating cover had been burned out, as a complementary technique for the judgments of fire cause.

Soft plasma electrolysis with complex ions for optimizing electrochemical performance

NASA Astrophysics Data System (ADS)

Kamil, Muhammad Prisla; Kaseem, Mosab; Ko, Young Gun

2017-03-01

Plasma electrolytic oxidation (PEO) was a promising surface treatment for light metals to tailor an oxide layer with excellent properties. However, porous coating structure was generally exhibited due to excessive plasma discharges, restraining its performance. The present work utilized ethylenediaminetetraacetic acid (EDTA) and Cu-EDTA complexing agents as electrolyte additives that alter the plasma discharges to improve the electrochemical properties of Al-1.1Mg alloy coated by PEO. To achieve this purpose, PEO coatings were fabricated under an alternating current in silicate electrolytes containing EDTA and Cu-EDTA. EDTA complexes were found to modify the plasma discharging behaviour during PEO that led to a lower porosity than that without additives. This was attributed to a more homogeneous electrical field throughout the PEO process while the coating growth would be maintained by an excess of dissolved Al due to the EDTA complexes. When Cu-EDTA was used, the number of discharge channels in the coating layer was lower than that with EDTA due to the incorporation of Cu2O and CuO altering the dielectric behaviour. Accordingly, the sample in the electrolyte containing Cu-EDTA constituted superior corrosion resistance to that with EDTA. The electrochemical mechanism for excellent corrosion protection was elucidated in the context of equivalent circuit model.

Soft plasma electrolysis with complex ions for optimizing electrochemical performance

PubMed Central

Kamil, Muhammad Prisla; Kaseem, Mosab; Ko, Young Gun

2017-01-01

Plasma electrolytic oxidation (PEO) was a promising surface treatment for light metals to tailor an oxide layer with excellent properties. However, porous coating structure was generally exhibited due to excessive plasma discharges, restraining its performance. The present work utilized ethylenediaminetetraacetic acid (EDTA) and Cu-EDTA complexing agents as electrolyte additives that alter the plasma discharges to improve the electrochemical properties of Al-1.1Mg alloy coated by PEO. To achieve this purpose, PEO coatings were fabricated under an alternating current in silicate electrolytes containing EDTA and Cu-EDTA. EDTA complexes were found to modify the plasma discharging behaviour during PEO that led to a lower porosity than that without additives. This was attributed to a more homogeneous electrical field throughout the PEO process while the coating growth would be maintained by an excess of dissolved Al due to the EDTA complexes. When Cu-EDTA was used, the number of discharge channels in the coating layer was lower than that with EDTA due to the incorporation of Cu2O and CuO altering the dielectric behaviour. Accordingly, the sample in the electrolyte containing Cu-EDTA constituted superior corrosion resistance to that with EDTA. The electrochemical mechanism for excellent corrosion protection was elucidated in the context of equivalent circuit model. PMID:28281672

Cross-Sectional Imaging of Boundary Lubrication Layer Formed by Fatty Acid by Means of Frequency-Modulation Atomic Force Microscopy.

PubMed

Hirayama, Tomoko; Kawamura, Ryota; Fujino, Keita; Matsuoka, Takashi; Komiya, Hiroshi; Onishi, Hiroshi

2017-10-10

To observe in situ the adsorption of fatty acid onto metal surfaces, cross-sectional images of the adsorption layer were acquired by frequency-modulation atomic force microscopy (FM-AFM). Hexadecane and palmitic acid were used as the base oil and typical fatty acid, respectively. A Cu-coated silicon wafer was prepared as the target substrate. The solvation structure formed by hexadecane molecules at the interface between the Cu substrate and the hexadecane was observed, and the layer pitch was found to be about 0.6 nm, which corresponds to the height of hexadecane molecules. This demonstrates that hexadecane molecules physically adsorbed onto the surface due to van der Waals forces with lying orientation because hexadecane is a nonpolar hydrocarbon. When hexadecane with palmitic acid was put on the Cu substrate instead of pure hexadecane, an adsorption layer of palmitic acid was observed at the interface. The layer pitch was about 2.5-2.8 nm, which matches the chain length of palmitic acid molecules well. This indicates that the original adsorption layer was monolayer or single bilayer in the local area. In addition, a cross-sectional image captured 1 h after observation started to reveal that the adsorbed additive layer gradually grew up to be thicker than about 20 nm due to an external stimulus, such as cantilever oscillation. This is the first report of in situ observation of an adsorbed layer by FM-AFM in the tribology field and demonstrates that FM-AFM is useful for clarifying the actual boundary lubrication mechanism.

Electrochemical detection of copper ions leached from CuO nanoparticles in saline buffers and biological media using a gold wire working electrode

NASA Astrophysics Data System (ADS)

Baldisserri, Carlo; Costa, Anna Luisa

2016-04-01

We performed explorative cyclic voltammetry in phosphate-buffered saline buffers, Dulbecco's modified Eagle's medium (DMEM), and fetal bovine serum-added DMEM using Au wire as working electrode, both in the absence and in the presence of known nominal concentrations of Cu2+ ions or 15 nm CuO nanoparticles. Addition of either Cu2+ ions or aqueous suspension of CuO nanoparticles caused a single anodic peak to appear in the double-layer region of all three pristine media. The height of the anodic peak was found to increase in a monotonic fashion vs. Cu2+ concentration in Cu2+-added media, and versus time since CuO addition in CuO-added media. Stepwise addition of glycine to Cu2+-added phosphate-buffered saline buffer caused an increasing cathodic shift of the anodic peak accompanied by decreasing peak currents. Results indicate that preparing Cu2+-free suspensions of CuO nanoparticles in such media is difficult, owing to the presence of leached copper ions. The implications on results of experiments in which CuO nanoparticle-added biological media are used as cell culture substrates are discussed. Literature data on the interactions between Cu2+ ions, dissolved carbon dioxide in aqueous CuO suspensions, and amino acids present in such media are compared to our results.

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

NASA Astrophysics Data System (ADS)

Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng

2015-01-01

A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices. Observing the resistive switching mechanism exhibited by all the samples suggested that Cu conductive filaments formed and ruptured during the set/reset process. The experimental results indicated that the endurance property failure that occurred was related to the joule heating effect. Moreover, the endurance switching cycle increased as the Cu concentration decreased. In high-temperature tests, the samples demonstrated that the operating (set/reset) voltages decreased as the temperature increased, and an Arrhenius plot was used to calculate the activation energy of the set/reset process. In addition, the samples demonstrated stable data retention properties when baked at 85 °C, but the samples with low Cu concentrations exhibited short retention times in the low-resistance state (LRS) during 125 °C tests. Therefore, Cu concentration is a crucial factor in the trade-off between the endurance and retention properties; furthermore, the Cu concentration can be easily modulated using this CS technique.

Cadmium sulfide solar cells

NASA Technical Reports Server (NTRS)

Stanley, A. G.

1975-01-01

Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

Localized Synthesis of Conductive Copper-Tetracyanoquinodimethane Nanostructures in Ultrasmall Microchambers for Nanoelectronics.

PubMed

Xing, Yanlong; Sun, Guoguang; Speiser, Eugen; Esser, Norbert; Dittrich, Petra S

2017-05-24

In this work, the microfluidic-assisted synthesis of copper-tetracyanoquinodimethane (Cu-TCNQ) nanostructures in an ambient environment is reported for the first time. A two-layer microfluidic device comprising parallel actuated microchambers was used for the synthesis and enabled excellent fluid handling for the continuous and multiple chemical reactions in confined ultrasmall chambers. Different precautions were applied to ensure the reduction state of copper (Cu) for the synthesis of Cu-TCNQ charge-transfer compounds. The localized synthesis of Cu and in situ transformation to Cu-TCNQ complexes in solution were achieved by applying different gas pressures in the control layer. Additionally, various diameters of the Cu-TCNQ nano/microstructures were obtained by adjusting the concentration of the precursors and reaction time. After the synthesis, platinum (Pt) microelectrode arrays, which were aligned at the microchambers, could enable the in situ measurements of the electronic properties of the synthesized nanostructures without further manipulation. The as-prepared Cu-TCNQ wire bundles showed good conductivity and a reversible hysteretic switching effect, which proved the possibility in using them to build advanced nanoelectronics.

Copper Selenidophosphates Cu4P2Se6, Cu4P3Se4, Cu4P4Se3, and CuP2Se, Featuring Zero-, One-, and Two-Dimensional Anions.

PubMed

Kuhn, Alexander; Schoop, Leslie M; Eger, Roland; Moudrakovski, Igor; Schwarzmüller, Stefan; Duppel, Viola; Kremer, Reinhard K; Oeckler, Oliver; Lotsch, Bettina V

2016-08-15

Five new compounds in the Cu/P/Se phase diagram have been synthesized, and their crystal structures have been determined. The crystal structures of these compounds comprise four previously unreported zero-, one-, and two-dimensional selenidophosphate anions containing low-valent phosphorus. In addition to two new modifications of Cu4P2Se6 featuring the well-known hexaselenidohypodiphosphate(IV) ion, there are three copper selenidophosphates with low-valent P: Cu4P3Se4 contains two different new anions, (i) a monomeric (zero-dimensional) selenidophosphate anion [P2Se4](4-) and (ii) a one-dimensional selenidophosphate anion [Formula: see text], which is related to the well-known gray-Se-like [Formula: see text] Zintl anion. Cu4P4Se3 contains one-dimensional [Formula: see text] polyanions, whereas CuP2Se contains the 2D selenidophosphate [Formula: see text] polyanion. It consists of charge-neutral CuP2Se layers separated by a van der Waals gap which is very rare for a Zintl-type phase. Hence, besides black P, CuP2Se constitutes a new possible source of 2D oxidized phosphorus containing layers for intercalation or exfoliation experiments. Additionally, the electronic structures and some fundamental physical properties of the new compounds are reported. All compounds are semiconducting with indirect band gaps of the orders of around 1 eV. The phases reported here add to the structural diversity of chalcogenido phosphates. The structural variety of this family of compounds may translate into a variety of tunable physical properties.

Structural properties and diffusion processes of the Cu 3Au (0 0 1) surface

NASA Astrophysics Data System (ADS)

Wang, Fang; Zhang, Jian-Min; Zhang, Yan; Ji, Vincent

2010-09-01

The surface relaxation and surface energy of both the mixed AuCu and pure Cu terminated Cu 3Au (0 0 1) surfaces are simulated and calculated by using the modified analytical embedded-atom method. We find that the mixed AuCu termination is energetically preferred over the pure Cu termination thereby the mono-vacancy diffusion is also investigated in the topmost few layers of the mixed AuCu terminated Cu 3Au (0 0 1) surface. In the mixed AuCu terminated surface the relaxed Au atoms are raised above Cu atoms for 0.13 Å in the topmost layer. All the surface atoms displace outwards, this effect occurs in the first three layers and changes the first two inter-layer spacing. For mono-vacancy migration in the first layer, the migration energies of Au and Cu mono-vacancy via two-type in-plane displace: the nearest neighbor jump (NNJ) and the second nearest neighbor jump (2NNJ), are calculated and the results show that the NNJ requires a much lower energy than 2NNJ. For the evolution of the energy requirements for successive nearest neighbor jumps (SNNJ) along three different paths: circularity, zigzag and beeline, we find that the circularity path is preferred over the other two paths due to its minimum energy barriers and final energies. In the second layer, the NN jumps in intra- and inter-layer of the Cu mono-vacancy are investigated. The calculated energy barriers and final energies show that the vacancy prefer jump up to a proximate Cu site. This replacement between the Cu vacancy in the second layer and Cu atom in the first layer is remunerative for the Au atoms enrichment in the topmost layer.

Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Treat, Neil D., E-mail: neil.treat@imperial.ac.uk, E-mail: t.anthopoulos@imperial.ac.uk; Stingelin, Natalie; Yaacobi-Gross, Nir

2015-07-06

We report the advantageous properties of the inorganic molecular semiconductor copper(I) thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic (OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at −5.35 eV, 0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], which produces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-based devices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditions is achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achieve PCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacement for the commonly usedmore » PEDOT:PSS.« less

Residual stress within nanoscale metallic multilayer systems during thermal cycling

DOE PAGES

Economy, David Ross; Cordill, Megan Jo; Payzant, E. Andrew; ...

2015-09-21

Projected applications for nanoscale metallic multilayers will include wide temperature ranges. Since film residual stress has been known to alter system reliability, stress development within new film structures with high interfacial densities should be characterized to identify potential long-term performance barriers. To understand factors contributing to thermal stress evolution within nanoscale metallic multilayers, stress in Cu/Nb systems adhered to Si substrates was calculated from curvature measurements collected during cycling between 25 °C and 400 °C. Additionally, stress within each type of component layers was calculated from shifts in the primary peak position from in-situ heated X-ray diffraction. The effects ofmore » both film architecture (layer thickness) and layer order in metallic multilayers were tracked and compared with monolithic Cu and Nb films. Analysis indicated that the thermoelastic slope of nanoscale metallic multilayer films depends on thermal expansion mismatch, elastic modulus of the components, and also interfacial density. The layer thickness (i.e. interfacial density) affected thermoelastic slope magnitude while layer order had minimal impact on stress responses after the initial thermal cycle. When comparing stress responses of monolithic Cu and Nb films to those of the Cu/Nb systems, the nanoscale metallic multilayers show a similar increase in stress above 200 °C to the Nb monolithic films, indicating that Nb components play a larger role in stress development than Cu. Local stress calculations from X-ray diffraction peak shifts collected during heating reveal that the component layers within a multilayer film respond similarly to their monolithic counterparts.« less

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

NASA Astrophysics Data System (ADS)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties

PubMed Central

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

Abstract A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV−visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties. PMID:27877868

Morphology and Shear Strength of Lead-Free Solder Joints with Sn3.0Ag0.5Cu Solder Paste Reinforced with Ceramic Nanoparticles

NASA Astrophysics Data System (ADS)

Yakymovych, A.; Plevachuk, Yu.; Švec, P.; Švec, P.; Janičkovič, D.; Šebo, P.; Beronská, N.; Roshanghias, A.; Ipser, H.

2016-12-01

To date, additions of different oxide nanoparticles is one of the most widespread procedures to improve the mechanical properties of metals and metal alloys. This research deals with the effect of minor ceramic nanoparticle additions (SiO2, TiO2 and ZrO2) on the microstructure and mechanical properties of Cu/solder/Cu joints. The reinforced Sn3.0Ag0.5Cu (SAC305) solder alloy with 0.5 wt.% and 1.0 wt.% of ceramic nanoparticles was prepared through mechanically stirring. The microstructure of as-solidified Cu/solder/Cu joints was studied using scanning electron microscopy. The additions of ceramic nanoparticles suppressed the growth of the intermetallic compound layer Cu6Sn5 at the interface solder/Cu and improved the microstructure of the joints. Furthermore, measurements of mechanical properties showed improved shear strength of Cu/composite solder/Cu joints compared to joints with unreinforced solder. This fact related to all investigated ceramic nanoinclusions and should be attributed to the adsorption of nanoparticles on the grain surface during solidification. However, this effect is less pronounced on increasing the nanoinclusion content from 0.5 wt.% to 1.0 wt.% due to agglomeration of nanoparticles. Moreover, a comparison analysis showed that the most beneficial influence was obtained by minor additions of SiO2 nanoparticles into the SAC305 solder alloy.

Effect of Copper Oxide Nanoparticles as a barrier for Efficiency Improvement in ZnO Dye-Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Sonthila, A.; Ruankham, P.; Choopun, S.; Wongratanaphisan, D.; Phadungdhitidhada, S.; Gardchareon, A.

2017-09-01

CuO nanoparticles (CuO NPs) were used as a barrier layer in ZnO dye-sensitized solar cells (DSSCs) to obtain high power conversion efficiency. The barrier layer was investigated in terms of the size of CuO NPs by varying power of pulsed Nd:YAG (1064 nm) laser ablation. Morphological and optical properties of CuO NPs were characterized by transmission electron microscopy (TEM), UV-visible spectrophotometry (UV-vis) and dynamic light scattering (DLS). It was found that the CuO NPs are rather spherical in shape with diameter in between 20 - 132 nm. In addition, the energy gap of CuO decreases with the increase of CuO NPs size. The power conversion efficiency of ZnO DSSCs was measured under illumination of simulated sunlight obtained from a solar simulator with the radiant power of 100 mW/cm2. The results showed that the ZnO DSSC with the CuO NPs with size of 37 nm exhibits the optimum power conversion efficiency of 1.01% which is higher than that of one without CuO NPs. Moreover, the power conversion efficiency of the ZnO DSSCs decreases with the increase of CuO NPs size.

High-Performance Semitransparent Perovskite Solar Cells with 10% Power Conversion Efficiency and 25% Average Visible Transmittance Based on Transparent CuSCN as the Hole-Transporting Material

DOE PAGES

Jung, Jae Woong; Chueh, Chu-Chen; Jen, Alex K. -Y.

2015-07-06

High-performance planar heterojunction perovskite (CH3NH3PbI3) solar cell (PVSC) is demonstrated by utilizing CuSCN as a hole-transporting layer. Efficient hole-transport and hole-extraction at the CuSCN/CH3NH3PbI3 interface facilitate the PVSCs to reach 16% power conversion efficiency (PCE). In addition, excellent transparency of CuSCN enables high-performance semitransparent PVSC (10% PCE and 25% average visible transmittance) to be realized.

Microstructures, optical and photovoltaic properties of CH3NH3PbI3(1‑x)Cl x perovskite films with CuSCN additive

NASA Astrophysics Data System (ADS)

Shirahata, Yasuhiro; Oku, Takeo

2018-05-01

Microstructures, optical and photovoltaic properties of CH3NH3PbI3(1‑x)Cl x perovskite films with copper(I) thiocyanate (CuSCN) additive were investigated. The CuSCN-added CH3NH3PbI3(1‑x)Cl x films were prepared by a hot air blow-assisted spin-coating method. Current density–voltage characteristics of the photovoltaic device using the CuSCN-added CH3NH3PbI3(1‑x)Cl x light-absorbing layer showed increases in short-circuit current density, open-circuit voltage, which resulted in increase in the conversion efficiency. Microstructure analysis showed that the crystal structure of the CuSCN-added CH3NH3PbI3(1‑x)Cl x was a pseudocubic system. From these results, partial substitutions of Pb2+ and anions (I‑ and Cl‑) by Cu ions (Cu+ and Cu2+) and SCN‑, respectively, are considered to occur in the CuSCN-added CH3NH3PbI3(1‑x)Cl x films. Based on the obtained results, reaction mechanisms of the CH3NH3PbI3(1‑x)Cl x films with and without CuSCN additive were discussed.

KF addition to Cu2SnS3 thin films prepared by sulfurization process

NASA Astrophysics Data System (ADS)

Nakashima, Mitsuki; Fujimoto, Junya; Yamaguchi, Toshiyuki; Sasano, Junji; Izaki, Masanobu

2017-04-01

Cu2SnS3 thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe microanalysis (EPMA), the Cu/Sn mole ratio was found to range from 0.81 to 1.51. The X-ray diffraction (XRD) patterns and Raman spectra indicated that the fabricated thin films had a monoclinic Cu2SnS3 structure. The Cu2SnS3 thin films fabricated by two-stage annealing had a close-packed structure and a pinhole-free surface morphology. The best solar cell in this study showed V oc of 293 mV, which surpassed the previously reported value.

Chemical reactions and morphological stability at the Cu/Al2O3 interface.

PubMed

Scheu, C; Klein, S; Tomsia, A P; Rühle, M

2002-10-01

The microstructures of diffusion-bonded Cu/(0001)Al2O3 bicrystals annealed at 1000 degrees C at oxygen partial pressures of 0.02 or 32 Pa have been studied with various microscopy techniques ranging from optical microscopy to high-resolution transmission electron microscopy. The studies revealed that for both oxygen partial pressures a 20-35 nm thick interfacial CuAlO2 layer formed, which crystallises in the rhombohedral structure. However, the CuAlO2 layer is not continuous, but interrupted by many pores. In the samples annealed in the higher oxygen partial pressure an additional reaction phase with a needle-like structure was observed. The needles are several millimetres long, approximately 10 microm wide and approximately 1 microm thick. They consist of CuAlO2 with alternating rhombohedral and hexagonal structures. Solid-state contact angle measurements were performed to derive values for the work of adhesion. The results show that the adhesion is twice as good for the annealed specimen compared to the as-bonded sample.

Effect of chloride ions on the corrosion behavior of low-alloy steel containing copper and antimony in sulfuric acid solution

NASA Astrophysics Data System (ADS)

Park, Sun-Ah; Kim, Seon-Hong; Yoo, Yun-Ha; Kim, Jung-Gu

2015-05-01

The influence of the addition of HCl on the corrosion behavior of low-alloy steel containing copper and antimony was investigated using electrochemical (potentiodynamic and potentiostatic polarization tests, and electrochemical impedance spectroscopy) and weight loss tests in a 1.6M H2SO4 solution with different concentrations of hydrochloric acid (0.00, 0.08, 0.15 and 0.20 M HCl) at 60 °C. The result showed that the corrosion rate decreased with increasing HCl by the formation of protective layers. SEM, EDS and XPS examinations of the corroded surfaces after the immersion test indicated that the corrosion production layer formed in the solution containing HCl was highly comprised of metallic Cu, Cu chloride and metallic (Fe, Cu, Sb) compounds. The corrosion resistance was improved by the Cu-enriched layer, in which chloride ions are an accelerator for cupric ion reduction during copper deposition. Furthermore, cuprous and antimonious chloride species are complex salts for cuprous ions adsorbed on the surface during copper deposition.

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

NASA Astrophysics Data System (ADS)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Investigation of magnetization dynamics damping in Ni80Fe20/Nd-Cu bilayer at room temperature

NASA Astrophysics Data System (ADS)

Fan, Wei; Fu, Qiang; Qian, Qian; Chen, Qian; Liu, Wanling; Zhou, Xiaochao; Yuan, Honglei; Yue, Jinjin; Huang, Zhaocong; Jiang, Sheng; Kou, Zhaoxia; Zhai, Ya

2018-05-01

Focusing on the Ni80Fe20 (Py)/Nd-Cu bilayers, the magnetization dynamic damping from spin pumping effect is investigated systematically by doping itinerant Cu in rear earth metal Nd. Various Ta/Py/Nd1-xCux/Ta/Si films with x = 0%, 16%, 38%, 46% and 58% are prepared by magnetron sputtering. For every content of Cu, the thickness of Nd-Cu layer is changed from 1 nm to 32 nm. The damping coefficient increases with increasing the thickness of Nd-Cu layer, which shows the trend of the spin pumping behavior. Also, with increasing Cu concentration in the Nd-Cu layer, the damping coefficient decreases, implying that the spin-orbit coupling in Nd-Cu layer is indeed cut down by high itinerant of Cu dopants. It is interesting that the spin diffusion length (λSD) in the Nd-Cu layer for different Cu dopants is not found to increase monotonously.

In vitro bioactivity, tribological property, and antibacterial ability of Ca-Si-based coatings doped with cu particles in-situ fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Hou, Baoping; Yang, Zhao; Yang, Yuling; Zhang, Erlin; Qin, Gaowu

2018-03-01

The present study aimed to in-situ fabricate Ca-Si-based coatings doped with copper particles (Cu-CS coatings) to enhance in vitro bioactivity, tribological property, and antibacterial ability of Ti-6Al-4V alloy. The effects of copper addition on the multiple properties were evaluated. Our results showed that Ca2SiO4, CaTiO3, and Cu2O were in-situ fabricated after laser processing. The Cu-CS coatings exhibited an excellent wear resistance and enhanced wettability. Regarding the in vitro bioactivity, after soaking in simulated body fluid, Cu-CS coatings developed an apatite surface layer that was reduced in the coatings with higher weight percent Cu addition. The Cu-CS coatings enhanced the inhibitory action against E. coli strains, especially for the coating with a higher concentration of Cu in it. Hence, the synthesized Cu-CS coatings present excellent tribological properties, enhanced bioactivity, and antibacterial property, and, therefore, would be used to modify the surface properties of Ti-6Al-4V implants for bone tissue engineering applications.

Preparation of Copper and Chromium Alloyed Layers on Pure Titanium by Plasma Surface Alloying Technology

NASA Astrophysics Data System (ADS)

He, Xiaojing; Li, Meng; Wang, Huizhen; Zhang, Xiangyu; Tang, Bin

2015-05-01

Cu-Cr alloyed layers with different Cu and Cr contents on pure titanium were obtained by means of plasma surface alloying technology. The microstructure, chemical composition and phase composition of Cu-Cr alloyed layers were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD), respectively. The experimental results demonstrate that the alloyed layers are bonded strongly to pure titanium substrate and consist of unbound Ti, CuTi, Cu3Ti, CuTi3 and Cr2Ti. The thickness of Cu5Cr5 and Cu7Cr3 alloyed layer are about 18 μm and 28 μm, respectively. The antibacterial properties against gram-negative Escherichia coli (E.coli, ATCC10536) and gram-positive Staphylococcus aureus (S. aureus, ATCC6538) of untreated pure titanium and Cu-Cr alloyed specimen were investigated by live/dead fluorescence staining method. The study shows that Cu-Cr alloyed layers exhibit excellent antibacterial activities against both E.coli and S.aureus within 24 h, which may be attributed to the formation of Cu-containing phases.

In situ imaging of microstructure formation in electronic interconnections

PubMed Central

Salleh, M. A. A. Mohd; Gourlay, C. M.; Xian, J. W.; Belyakov, S. A.; Yasuda, H.; McDonald, S. D.; Nogita, K.

2017-01-01

The development of microstructure during melting, reactive wetting and solidification of solder pastes on Cu-plated printed circuit boards has been studied by synchrotron radiography. Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show that the interfacial Cu6Sn5 layer is present within 0.05 s of wetting, and explore the kinetics of flux void formation at the interface between the liquid and the Cu6Sn5 layer. Quantification of the nucleation locations and anisotropic growth kinetics of primary Cu6Sn5 crystals reveals a competition between the nucleation of Cu6Sn5 in the liquid versus growth of Cu6Sn5 from the existing Cu6Sn5 layer. Direct imaging confirms that the β-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/Cu joints. PMID:28079120

Study on the photo-induced oxygen reordering in YBa2Cu3O6+x

NASA Astrophysics Data System (ADS)

Milić, M. M.; Lazarov, N. Dj.; Cucić, D. A.

2012-05-01

Effect of the long term illumination of the YBa2Cu3O6+x with visible light or ultraviolet irradiation on its superconducting properties was studied in the frame of a simple theoretical model, which assumes that photodoping triggers rearrangement of oxygen monomers in the chain layers thus causing the enhancement of the average chain length, lav. Since, according to the model of charge transfer mechanism, long CuO chains are better electronic hole donors than the short ones, increase of the average chain length induces additional holes transfer from chain layers to the superconducting CuO2 planes which in turn leads to the increase of the superconducting transition temperature Tc. By the use of the expression for the chain length probability distribution and numerically calculated values for the average chain length in the non-excited system, we were able to estimate the doping p (number of holes per one Cu atom in the superconducting CuO2 planes) and Tc enhancement due to photo-induced oxygen reordering. The theoretical results are compared with available experimental data.

Two interpenetrating Cu{sup II}/Ni{sup II}-coordinated polymers based on an unsymmetrical bifunctional N/O-tectonic: Syntheses, structures and magnetic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yong-Liang; Department of Chemistry and Chemical Engineering, Shaanxi Key Laboratory of Comprehensive Utilization of Tailings Resources, Shang Luo University, Shang Luo 726000; Wu, Ya-Pan

2015-03-15

Two new interpenetrating Cu{sup II}/Ni{sup II} coordination polymers, based on a unsymmetrical bifunctional N/O-tectonic 3-(pyrid-4′-yl)-5-(4″-carbonylphenyl)-1,2,4-triazolyl (H{sub 2}pycz), ([Cu-(Hpycz){sub 2}]·2H{sub 2}O){sub n} (1) and ([Ni(Hpycz){sub 2}]·H{sub 2}O){sub n} (2), have been solvothermally synthesized and structure characterization. Single crystal X-ray analysis indicates that compound 1 shows 2-fold parallel interpenetrated 4{sup 4}-sql layers with the same handedness. The overall structure of 1 is achiral—in each layer of doubly interpenetrating nets, the two individual nets have the opposite handedness to the corresponding nets in the adjoining layers—while 2 features a rare 8-fold interpenetrating 6{sup 6}-dia network that belongs to class IIIa interpenetration. In addition,more » compounds 1 and 2 both show similar paramagnetic characteristic properties. - Graphical abstract: Two new Cu(II)/Ni(II) coordination polymers present 2D parallel 2-fold interpenetrated 4{sup 4}-sql layers and a rare 3D 8-fold interpenetrating 6{sup 6}-dia network. In addition, magnetic susceptibility measurements show similar paramagnetic characteristic for two complexes. - Highlights: • A new unsymmetrical bifunctional N/O-tectonic as 4-connected spacer. • A 2-fold parallel interpenetrated sql layer with the same handedness. • A rare 8-fold interpenetrating dia network (class IIIa)« less

Role of Cu layer thickness on the magnetic anisotropy of pulsed electrodeposited Ni/Cu/Ni tri-layer

NASA Astrophysics Data System (ADS)

Dhanapal, K.; Prabhu, D.; Gopalan, R.; Narayanan, V.; Stephen, A.

2017-07-01

The Ni/Cu/Ni tri-layer film with different thickness of Cu layer was deposited using pulsed electrodeposition method. The XRD pattern of all the films show the formation of fcc structure of nickel and copper. This shows the orientated growth in the (2 2 0) plane of the layered films as calculated from the relative intensity ratio. The layer formation in the films were observed from cross sectional view using FE-SEM and confirms the decrease in Cu layer thickness with decreasing deposition time. The magnetic anisotropy behaviour was measured using VSM with two different orientations of layered film. This shows that increasing anisotropy energy with decreasing Cu layer thickness and a maximum of  -5.13  ×  104 J m-3 is observed for copper deposited for 1 min. From the K eff.t versus t plot, development of perpendicular magnetic anisotropy in the layered system is predicted below 0.38 µm copper layer thickness.

Ni Nanobuffer Layer Provides Light-Weight CNT/Cu Fibers with Superior Robustness, Conductivity, and Ampacity.

PubMed

Zou, Jingyun; Liu, Dandan; Zhao, Jingna; Hou, Ligan; Liu, Tong; Zhang, Xiaohua; Zhao, Yonghao; Zhu, Yuntian T; Li, Qingwen

2018-03-07

Carbon nanotube (CNT) fiber has not shown its advantage as next-generation light-weight conductor due to the large contact resistance between CNTs, as reflected by its low conductivity and ampacity. Coating CNT fiber with a metal layer like Cu has become an effective solution to this problem. However, the weak CNT-Cu interfacial bonding significantly limits the mechanical and electrical performances. Here, we report that a strong CNT-Cu interface can be formed by introducing a Ni nanobuffer layer before depositing the Cu layer. The Ni nanobuffer layer remarkably promotes the load and heat transfer efficiencies between the CNT fiber and Cu layer and improves the quality of the deposited Cu layer. As a result, the new composite fiber with a 2 μm thick Cu layer can exhibit a superhigh effective strength >800 MPa, electrical conductivity >2 × 10 7 S/m, and ampacity >1 × 10 5 A/cm 2 . The composite fiber can also sustain 10 000 times of bending and continuously work for 100 h at 90% ampacity.

Effects of Sn Layer Orientation on the Evolution of Cu/Sn Interfaces

NASA Astrophysics Data System (ADS)

Sun, Menglong; Zhao, Zhangjian; Hu, Fengtian; Hu, Anmin; Li, Ming; Ling, Huiqin; Hang, Tao

2018-03-01

The effects of Sn layer orientation on the evolution of Cu/Sn joint interfaces were investigated. Three Sn layers possessing (112), (321) and (420) orientations were electroplated on polycrystalline Cu substrates respectively. The orientations of Sn layer preserved during reflowing at 250 °C for 10 s. After aging at 150 °C for different time, the interfacial microstructures were observed from the cross-section and top-view. The alignment between the c-axis of Sn and Cu diffusion direction significantly sped up the Cu diffusion, leading to the thickest intermetallic compound layer formed in (112) joint. Two types of voids, namely, intracrystalline voids and grain islanding caused intercrystalline voids generated at Cu/Cu3Sn interfaces due to the different interdiffusion coefficients of Cu and Sn (112) oriented Sn/Cu joint produced many more voids than (321) joint, and no voids were detected in (420) joint. Therefore, to enhance the reliability of solder joints, using (420) oriented Sn as solder layer could be an efficient way.

Depth Profile of Induced Magnetic Polarization in Cu Layers of Co/Cu(111) Metallic Superlattices by Resonant X-ray Magnetic Scattering at the Cu K Absorption Edge

NASA Astrophysics Data System (ADS)

Uegaki, Shin; Yoshida, Akihiro; Hosoito, Nobuyoshi

2015-03-01

We investigated induced spin polarization of 4p conduction electrons in Cu layers of antiferromagnetically (AFM) and ferromagnetically (FM) coupled Co/Cu(111) metallic superlattices by resonant X-ray magnetic scattering at the Cu K absorption edge. Magnetic reflectivity profiles of the two superlattices were measured in the magnetic saturation state with circularly polarized synchrotron radiation X-rays at 8985 eV. Depth profiles of the resonant magnetic scattering length of Cu, which corresponds to the induced spin polarization of Cu, were evaluated in the two Co/Cu superlattices by analyzing the observed magnetic reflectivity profiles. We demonstrated that the spin polarization induced in the Cu layer was distributed around the Co/Cu interfaces with an attenuation length of several Å in both AFM and FM coupled superlattices. The uniform component, which exists in Au layers of Fe/Au(001) superlattices, was not found in the depth distribution of induced magnetic polarization in the Cu layers of Co/Cu(111) superlattices.

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Liu, Wei; Fan, Yu; Li, Xiaodong; Lin, Shuping; Liu, Yang; Shi, Sihan; Wang, He; Zhou, Zhiqiang; Zhang, Yi; Sun, Yun

2018-03-01

Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector

NASA Astrophysics Data System (ADS)

Zhou, Wei; Yin, Yiming; Yao, Niangjuan; Jiang, Lin; Qu, Yue; Wu, Jing; Gao, Y. Q.; Huang, Jingguo; Huang, Zhiming

2018-01-01

A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn1. 96Co0.96Ni0.48O4(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10-8 W/Hz0. 5. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

Improved tribological properties of the synthesized copper/carbon nanotube nanocomposites for rapeseed oil-based additives

NASA Astrophysics Data System (ADS)

Wang, Zhiqiang; Ren, Ruirui; Song, Haojie; Jia, Xiaohua

2018-01-01

Carbon nanotubes (CNTs) decorated with uniform copper nanoparticles (Cu NPs) were successfully prepared via a facile approach towards surface modification of CNTs with spontaneous polydopamine (PDA). The structures and morphologies of the nanocomposites were investigated by different kinds of techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Cu/PDA/CNTs nanocomposites were fabricated by growing the Cu NPs with an average diameter of 5 nm on the surfaces of PDA-modified CNTs. The CNTs functionalized with PDA layer not only provide an anchoring platform for the Cu NPs immobilization, but also endow Cu/PDA/CNTs with good dispersion stability when Cu/PDA/CNTs nanocomposites were used as lubricant additive. The tribological performance of the nanocomposites as the rapeseed oil lubricant additive, as well as Cu NPs, CNTs, and Cu/CNTs, was also investigated using a MS-T3000 ball-on-disk tribometer. Results show that the 0.2 wt% Cu/PDA/CNTs nanoadditive simultaneously reduce the friction and wear by 33.5% and 23.7%, respectively, outperformed the tribological performance of Cu NPs, CNTs, and Cu/CNTs nanoadditives. In addition, the presence of active sites in Cu/PDA/CNTs was beneficial to reduce the time of running-in period, give rise to the fastest speed to be stable of the friction coefficient curve as compared to the other nanoadditives. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy of the worn surfaces lubricated by the soybean oil with Cu/PDA/CNTs nanocomposites showed that formation of low shear strength tribofilms containing Cu/PDA/CNTs nanocomposites and its self-lubricating property was key factor in reduction of the friction and protection against wear and deformation.

Dynamics of the phase formation process upon the low temperature selenization of Cu/In-multilayer stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oertel, M., E-mail: michael.oertel@uni-jena.de; Ronning, C.

2015-03-14

Phase reactions occurring during a low temperature selenization of thin In/Cu-multilayer stacks were investigated by ex-situ x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). Therefore, dc-sputtered In/Cu-multilayers onto molybdenum coated soda lime glass were selenized in a high vacuum system at temperatures between 260 and 340 °C with different dwell times and selenium supply. The combination of the results of the phase analysis by XRD and the measurements of the in-depth elemental distribution by EDS allowed a conclusion on the occurring reactions within the layer depth. We found two CuInSe{sub 2} formation processes depending on the applied temperature. Already, atmore » a heater temperature of 260 °C, the CuInSe{sub 2} formation can occur by the reaction of Cu{sub 2−x}Se with In{sub 4}Se{sub 3} and Se. At 340 °C, CuInSe{sub 2} is formed by the reaction of Cu{sub 2−x}Se with InSe and Se. Because both reactions need additional selenium, the selenium supply during the selenization can shift the reaction equilibria either to the metal binaries side or to the CuInSe{sub 2} side. Interestingly, a lower selenium supply shifts the equilibrium to the CuInSe{sub 2} side, because the amount of selenium incorporated into the metallic layer is higher for a lower selenium supply. Most likely, a larger number of grain boundaries are the reason for the stronger selenium incorporation. The results of the phase formation studies were used to design a two stage selenization process to get a defined structure of an indium selenide- and a copper selenide-layer at low temperatures as the origin for a controlled interdiffusion to form the CuInSe{sub 2}-absorber-layer at higher temperatures. The approach delivers a CuInSe{sub 2} absorber which reach total area efficiencies of 11.8% (13.0% active area) in a CuInSe{sub 2}-thin-film solar cell. A finished formation of CuInSe{sub 2} at low temperature was not observed in our experiments but is probably possible for longer dwell times.« less

Sulfurization effect on optical properties of Cu2SNS3 thin films grown by two-stage process

NASA Astrophysics Data System (ADS)

Reddy, G. Phaneendra; Reddy, K. T. Ramakrishna

2017-05-01

A good phase controlled and impurity free two stage process was used to prepare Cu2SnS3 layers on glass substrates. The layers were prepared by sulfurization of sputtered Cu-Sn metallic precursors by varying the sulfurization temperature (Ts) in the range, 150-450°C, keeping the other deposition parameters constant. A complete investigation of the optical properties of the layers with sulfurization temperature was made by using the optical transmittance and reflectance measurements versus wavelength. The absorption coefficient α, was evaluated using the optical data that showed a α > 104 cm-1 for all the as-grown films. The optical bandgap of the as grown layers was determined from the second derivative diffused reflectance spectra that varied from 1.96 eV to 0.99 eV. Consequently, refractive index and extinction coefficient were calculated from Pankov's relations. In addition, the other optical parameters such as the dielectric constants, dissipation factor and also optical conductivity calculated. A detailed analysis of the dependence of all the above parameters on Ts is reported and discussed.

Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

NASA Astrophysics Data System (ADS)

Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

2016-10-01

The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

Multi-layered chalcogenides with potential for magnetism and superconductivity

DOE PAGES

Li, Li; Parker, David S.; dela Cruz, Clarina R.; ...

2016-10-24

Layered thallium copper chalcogenides can form single, double, or triple layers of Cu– Ch separated by Tl sheets. Here we report on the preparation and properties of Tl-based materials of TlCu 2Se 2, TlCu 4S 3, TlCu 4Se 3 and TlCu 6S 4. Having no long-range magnetism for these materials is quite surprising considering the possibilities of inter- and intra-layer exchange interactions through Cu 3 d, and we measure by magnetic susceptibility and confirm by neutron diffraction. First principles density-functional theory calculations for both the single-layer TlCu 2Se 2 (isostructural to the ‘122’ iron-based superconductors) and the double-layer TlCu 4Semore » 3 suggest a lack of Fermi-level spectral weight that is needed to drive a magnetic or superconducting instability. Furthermore, for multiple structural layers with Fe, there is much greater likelihood for magnetism and superconductivity.« less

Method for forming silver-copper mixed kesterite semiconductor film

DOEpatents

Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

2018-01-23

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0

Transmission electron microscopy for archaeo-materials research: Nanoparticles in glazes and red/yellow glass and inorganic pigments in painted context

NASA Astrophysics Data System (ADS)

Fredrickx, Peggy

2004-10-01

This dissertation addresses the application of Transmission Electron Microscopy (TEM) to historic objects, concentrating on colour-causing nanoparticles in vitreous materials and pigments with the focus on substrates in lake pigments used in thin glaze layers, and on manuscript illustrations. TEM is well suited for archaeometry: it gives chemical elemental information, imaging and diffraction information and the amount of material needed is minimal. Sample preparation techniques suitable for historic materials are discussed. Nanoparticles can be incorporated in glass through staining. Yellow coloured glass plates contain Ag particles. Baking temperatures and different Ag-salts determine the density of the nanoparticles. Dense layers cause more saturated colours. Red glass plates can be obtained by staining with Cu-salts. Metallic Cu particles have a diameter of about 24 nm. Comparison with XRF results suggests that often a combination of Cu and Ag was used for warmer colours. Red glass can be "flashed" to the substrate glass. Then, the colour is also caused by metallic Cu particles. The red layer often displays a band structure of stacked red and transparent bands. In the transparent bands, no nanoparticles have been found. In lustre-ware, Ag and metallic Cu occur. Their distribution throughout the material determines the colour of the fragment. In both there is a dense top layer with particles of sizes smaller than 15 nm. If this top layer consists of Ag particles, the resulting colour is golden. In one sample, under this top layer the amount of Cu particles increases. This underlying layer causes the colour to redden. Particles are mainly between 5 and 15 nm in diameter. Using reconstructions, it has been demonstrated that TEM can detect and identify a stacking of thin layers in parchment decorations. A pink powder sample from Pompeii consists of a basis of allophane type clay. The lake substrates consist of Al, O, S and their amorphous structure does not seem to be noticeably changed by the addition of organic colourants. Hydrocerussite crystals (i.e. the main component of lead white) have been added to some historic glaze layers. Further it was confirmed that sometimes crystalline CaSO4 particles were added to lakes.

Reactions in Electrodeposited Cu/Sn and Cu/Ni/Sn Nanoscale Multilayers for Interconnects

PubMed Central

Chia, Pay Ying; Haseeb, A. S. M. A.; Mannan, Samjid Hassan

2016-01-01

Miniaturization of electronic devices has led to the development of 3D IC packages which require ultra-small-scale interconnections. Such small interconnects can be completely converted into Cu-Sn based intermetallic compounds (IMCs) after reflow. In an effort to improve IMC based interconnects, an attempt is made to add Ni to Cu-Sn-based IMCs. Multilayer interconnects consisting of stacks of Cu/Sn/Cu/Sn/Cu or Cu/Ni/Sn/Ni/Sn/Cu/Ni/Sn/Ni/Cu with Ni = 35 nm, 70 nm, and 150 nm were electrodeposited sequentially using copper pyrophosphate, tin methanesulfonic, and nickel Watts baths, respectively. These multilayer interconnects were investigated under room temperature aging conditions and for solid-liquid reactions, where the samples were subjected to 250 °C reflow for 60 s and also 300 °C for 3600 s. The progress of the reaction in the multilayers was monitored by using X-ray Diffraction, Scanning Electron Microscope, and Energy dispersive X-ray Spectroscopy. FIB-milled samples were also prepared for investigation under room temperature aging conditions. Results show that by inserting a 70 nanometres thick Ni layer between copper and tin, premature reaction between Cu and Sn at room temperature can be avoided. During short reflow, the addition of Ni suppresses formation of Cu3Sn IMC. With increasing Ni thickness, Cu consumption is decreased and Ni starts acting as a barrier layer. On the other hand, during long reflow, two types of IMC were found in the Cu/Ni/Sn samples which are the (Cu,Ni)6Sn5 and (Cu,Ni)3Sn, respectively. Details of the reaction sequence and mechanisms are discussed. PMID:28773552

Interface structure in Cu/Ta2O5/Pt resistance switch: a first-principles study.

PubMed

Xiao, Bo; Watanabe, Satoshi

2015-01-14

The interface structures of a Cu/Ta2O5/Pt resistance switch under various oxidation conditions have been examined from first-principles. The O-rich Cu/Ta2O5 interface is found to be stable within a wide range of O chemical potentials. In this interface structure, a considerable number of interface Cu atoms tend to migrate to the amorphous Ta2O5 (a-Ta2O5) layer, which causes the formation of the Cu2O layer. The interface Cu atoms become more ionized with an increase in the interface O concentration and/or temperature. These ionized Cu(+) ions could function as one of the main sources for the formation of conduction filaments in the Cu/a-Ta2O5/Pt resistance switch. In contrast, the ionization of the interface Cu atoms is not observed in the Cu/crystal-Ta2O5 interface primarily due to the much lower Cu ionic conductivity in crystal-Ta2O5 than that in amorphous state. In addition, the Pt electrode could not be ionized, irrespective of the interface O concentration and temperature. The formation of interface O vacancies in Pt/Ta2O5 is always energetically more stable than that in Cu/Ta2O5, which may be partly responsible for the cone shape of conduction filament formed in the Cu/a-Ta2O5/Pt resistance switch, where the base of the cone lies on the Pt/Ta2O5 interface.

Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

NASA Astrophysics Data System (ADS)

Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

2018-01-01

A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

Determination of structural, mechanical and corrosion properties of Nb2O5 and (NbyCu 1-y)Ox thin films deposited on Ti6Al4V alloy substrates for dental implant applications.

PubMed

Mazur, M; Kalisz, M; Wojcieszak, D; Grobelny, M; Mazur, P; Kaczmarek, D; Domaradzki, J

2015-02-01

In this paper comparative studies on the structural, mechanical and corrosion properties of Nb2O5/Ti and (NbyCu1-y)Ox/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb2O5 film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb0.75Cu0.25)Ox thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. Copyright © 2014. Published by Elsevier B.V.

Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope

NASA Astrophysics Data System (ADS)

Amanokura, Jin; Ono, Hiroshi; Hombo, Kyoko

2011-05-01

In order to obtain a high-speed copper chemical mechanical polishing (CMP) process for through silicon vias (TSV) application, we developed a new Cu CMP slurry through friction analysis of Cu reaction layer by an atomic force microscope (AFM) technique. A lateral modulation friction force microscope (LM-FFM) is able to measure the friction value properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and the Cu reaction layer under a 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry forms a frictionally easy-removable Cu reaction layer.

Study on the antibacterial mechanism of copper ion- and neodymium ion-modified α-zirconium phosphate with better antibacterial activity and lower cytotoxicity.

PubMed

Cai, Xiang; Zhang, Bin; Liang, Yuanyuan; Zhang, Jinglin; Yan, Yinghui; Chen, Xiaoyin; Wu, Zhimin; Liu, Hongxi; Wen, Shuiping; Tan, Shaozao; Wu, Ting

2015-08-01

To improve the antibacterial activity of Cu(2+), a series of Cu(2+) and/or Nd(3+)-modified layered α-zirconium phosphate (ZrP) was prepared and characterized, and the antibacterial activities of the prepared Cu(2+) and/or Nd(3+)-modified ZrP on Gram-negative Escherichia coli were investigated. The results showed that the basal spacing of ZrP was not obviously affected by the incorporation of Cu(2+), but the basal spacing of the modified ZrP changed into an amorphous state with increasing additions of Nd(3+). An antibacterial mechanism showed that Cu(2+) and Nd(3+) could enter into E. coli cells, leading to changes in ion concentrations and leakage of DNA, RNA and protein. The Cu(2+)- and Nd(3+)-modified ZrP, combining the advantages of Cu(2+) and Nd(3+), displayed excellent additive antibacterial activity and lower cytotoxicity, suggesting the great potential application as an antibacterial powder for microbial control. Crown Copyright © 2015. Published by Elsevier B.V. All rights reserved.

Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

NASA Astrophysics Data System (ADS)

Zhu, Changqiong

Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from basic lactate solution with a large lactate/Cu2+ molar ratio, are sodium-free. This finding stands in contrast to the observation that films grown in basic solution contain a significant amount of sodium impurity at their top surfaces. Therefore, it is concluded that the sodium impurities present in films grown from basic lactate solutions are detrimental to overall photovoltaic device performance by introducing interface traps and recombination centers for charge carriers, which suggests that removing these impurities may be a promising strategy for improving Cu2O based solar cells. It has been found that impurities at the surface of electrodeposited p-Cu2O films can be efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of Cu 2O homojunction photovoltaic devices incorporating etched p-Cu 2O as the bottom layer is higher compared to devices with as-deposited p-Cu2O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers is found to lead to larger open circuit voltages. Zinc-doped cuprous oxide (Zn:Cu2O) thin films have also been prepared via single step electrodeposition from an aqueous solution containing sodium perchlorate. The Zn/Cu molar ratio in the Cu2O films can be tuned by adjusting the magnitude of the applied potential and the sodium perchlorate concentration. Electrical characterization reveals that zinc dopants increase the Fermi level in Zn:Cu2O films, enabling a three-fold improvement in the power conversion efficiency of a fully electrodeposited Cu2O homojunction photovoltaic device. Complementary to the development of Cu2O based photovoltaic devices, the use of solution deposited cupric oxide (CuO) thin films for capacitive energy storage has also been investigated. A seed layer-assisted chemical bath deposition (SCBD) method has been developed to create high quality CuO thin films on transparent conductive electrode (ITO)/glass substrates. A CuO seed layer is formed by the electrodeposition of Cu2O on ITO electrode for 10 s, followed by a brief (15 min) heating step to convert the Cu 2O to CuO. The seed layer is found to be essential for the growth of micrometer-thick, adherent CuO thin films on ITO-coated glass, as no films were observed to form on substrates without a seed layer. The addition of sodium lactate to the SCBD solution can be used to tune the morphology and relative crystallinity of the CuO films. A highly crystalline CuO film has been deposited from a solution without sodium lactate, while a largely amorphous CuO film was realized using lactate/Cu2+ molar ratio equal to 1.0. The CuO film with greater amorphous character exhibited a significantly larger specific capacitance as a redox active electrode compared to the crystalline film (2700 mF/g vs. 96 mF/g).

Magnetic field dependence of high- T c interface superconductivity in L a 1.55 S r 0.45 Cu O 4 / L a 2 Cu O 4 heterostructures

DOE PAGES

Gasparov, V. A.; Drigo, L.; Audouard, A.; ...

2016-07-11

Heterostructures made of a layer of a cuprate insulator La 2CuO 4 on the top of a layer of a nonsuperconducting cuprate metal La 1.55Sr 0.45CuO 4 show high-T c interface superconductivity confined within a single CuO 2 plane. Given this extreme quasi-two-dimensional quantum confinement, it is of interest to find out how interface superconductivity behaves when exposed to an external magnetic field. With this motivation, we have performed contactless tunnel-diode-oscillator-based measurements in pulsed magnetic fields up to 56 T as well as measurements of the complex mutual inductance between a spiral coil and the film in static fields upmore » to 3 T. Remarkably, we observe that interface superconductivity survives up to very high perpendicular fields, in excess of 40 T. Additionally, the critical magnetic field H m(T) reveals an upward divergence with decreasing temperature, in line with vortex melting as in bulk superconducting cuprates.« less

Improvement of performance in low temperature solid oxide fuel cells operated on ethanol and air mixtures using Cu-ZnO-Al2O3 catalyst layer

NASA Astrophysics Data System (ADS)

Morales, M.; Espiell, F.; Segarra, M.

2015-10-01

Anode-supported single-chamber solid oxide fuel cells with and without Cu-ZnO-Al2O3 catalyst layers deposited on the anode support have been operated on ethanol and air mixtures. The cells consist of gadolinia-doped ceria electrolyte, Ni-doped ceria anode, and La0.6Sr0.4CoO3-δ-doped ceria cathode. Catalyst layers with different Cu-ZnO-Al2O3 ratios are deposited and sintered at several temperatures. Since the performance of single-chamber fuel cells strongly depends on catalytic properties of electrodes for partial oxidation of ethanol, the cells are electrochemically characterized as a function of the temperature, ethanol-air molar ratio and gas flow rate. In addition, catalytic activities of supported anode, catalytic layer-supported anode and cathode for partial oxidation of ethanol are analysed. Afterwards, the effect of composition and sintering temperature of catalyst layer on the cell performance are determined. The results indicate that the cell performance can be significantly enhanced using catalyst layers of 30:35:35 and 40:30:30 wt.% Cu-ZnO-Al2O3 sintered at 1100 °C, achieving power densities above 50 mW cm-2 under 0.45 ethanol-air ratio at temperatures as low as 450 °C. After testing for 15 h, all cells present a gradual loss of power density, without carbon deposition, which is mainly attributed to the partial re-oxidation of Ni at the anode.

Development of interface-dominant bulk Cu/V nanolamellar composites by cross accumulative roll bonding

PubMed Central

Zeng, L. F.; Gao, R.; Xie, Z. M.; Miao, S.; Fang, Q. F.; Wang, X. P.; Zhang, T.; Liu, C. S.

2017-01-01

Traditional nanostructured metals are inherently comprised of a high density of high-energy interfaces that make this class of materials not stable in extreme conditions. Therefore, high performance bulk nanostructured metals containing stable interfaces are highly desirable for extreme environments applications. Here, we reported an attractive bulk Cu/V nanolamellar composite that was successfully developed by integrating interface engineering and severe plastic deformation techniques. The layered morphology and ordered Cu/V interfaces remained stable with respect to continued rolling (total strain exceeding 12). Most importantly, for layer thickness of 25 nm, this bulk Cu/V nanocomposite simultaneously achieves high strength (hardness of 3.68 GPa) and outstanding thermal stability (up to 700 °C), which are quite difficult to realize simultaneously in traditional nanostructured materials. Such extraordinary property in our Cu/V nanocomposite is achieved via an extreme rolling process that creates extremely high density of stable Cu/V heterophase interfaces and low density of unstable grain boundaries. In addition, high temperature annealing result illustrates that Rayleigh instability is the dominant mechanism driving the onset of thermal instability after exposure to 800 °C. PMID:28094346

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, A.A.; Yang, L.C.

1995-12-19

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe{sub 2} where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor. 15 figs.

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, Angus A.; Yang, Li-Chung

1995-01-01

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.

Optical Coating for Improvement in Thermal Radiative Properties of Cu (In, Ga) Se2 Thin Film Solar Cells for Space Applications

NASA Astrophysics Data System (ADS)

Shimazaki, Kazunori; Kawakita, Shirou; Imaizumi, Mitsuru; Kuwajima, Saburou; Sakurai, Keiichiro; Matsubara, Koji; Niki, Sigeru

2005-05-01

Optical coating on Cu(In, Ga)Se2 thin film solar cells, which have high radiation tolerance, is investigated in order to improve their radiative properties for thermal balance in space. Due to low thermal emissivity, the temperature of the CIGS solar cell is expected to exceed the allowable limit if no coating is applied. Evaporated single-layer coating of silicon dioxide and additional over-layer coatings on the CIGS solar cells increase the emissivity from 0.18 to 0.75. The coating with the over-layer coatings realizes higher emissivity with less thickness than that of the single SiO2 coating. In addition, optical coatings reflecting UV rays and infrared radiation are designed and evaporated on the cells to control solar input. The developed optical coatings could give the CIGS solar cells appropriate thermal radiative properties for space applications without any degradations of the cell performance.

Nanocomposite SAC Solders: The Effect of Adding Ni and Ni-Sn Nanoparticles on Morphology and Mechanical Properties of Sn-3.0Ag-0.5Cu Solders

NASA Astrophysics Data System (ADS)

Yakymovych, A.; Švec, P.; Orovcik, L.; Bajana, O.; Ipser, H.

2018-01-01

This study investigates the effect of minor additions of Ni, Ni3Sn or Ni3Sn2 nanoparticles on the microstructure and mechanical properties of Cu/solder/Cu joints. The nanocomposite Sn-3.0Ag-0.5Cu (SAC305) solders with 0.5, 1.0 and 2.0 wt.% metallic nanoparticles were prepared through a paste mixing method. The employed Ni and Ni-Sn nanoparticles were produced via a chemical reduction method. The microstructure of as-solidified Cu/solder/Cu joints was studied by x-ray diffraction and scanning electron microscopy. The results showed that additions of Ni and Ni-Sn nanoparticles to the SAC305 solder paste lead initially to a decrease in the average thickness of the intermetallic compound layer in the interface between solder and substrate, while further additions up to 2.0 wt.% did not induce any significant changes. In addition, shear strength and microhardness tests were performed to investigate the relationship between microstructure and mechanical properties of the investigated solder joints. The results indicated an increase in both of these properties which was most significant for the solder joints using SAC305 with 0.5 wt.% Ni or Ni-Sn nanoparticles.

Exhibition of veiled features in diffusion bonding of titanium alloy and stainless steel via copper

NASA Astrophysics Data System (ADS)

Thirunavukarasu, Gopinath; Kundu, Sukumar; Laha, Tapas; Roy, Deb; Chatterjee, Subrata

2017-11-01

An investigation was carried out to know the extent of influence of bonding-time on the interface structure and mechanical properties of diffusion bonding (DB) of TiA|Cu|SS. DB of Ti6Al4V (TiA) and 304 stainless steel (SS) using pure copper (Cu) of 200-μm thickness were processed in vacuum using 4-MPa bonding-pressure at 1123 K from 15 to 120 min in steps of 15 min. Preparation of DB was not possible when bonding-time was less than 60 min as the bonding at Cu|SS interface was unsuccessful in spite of effective bonding at TiA|Cu interface; however, successful DB were produced when the bonding-time was 60 min and beyond. DB processed for 60 and 75 min (classified as shorter bonding-time interval) showed distinctive characteristics (structural, mechanical, and fractural) as compared to the DB processed for 90, 105, and 120 min (classified as longer bonding-time interval). DB processed for 60 and 75 min exhibited layer-wise Cu-Ti-based intermetallics at TiA|Cu interface, whereas Cu|SS interface was completely free from reaction products. The layer-wise structure of Cu-Ti-based intermetallics were not observed at TiA|Cu interface in the DB processed for longer bonding-time; however, the Cu|SS interface had layer-wise ternary intermetallic compounds (T1, T2, and T3) of Cu-Fe-Ti-based along with σ phase depending upon the bonding-time chosen. Diffusivity of Ti-atoms in Cu-layer (DTi in Cu-layer) was much greater than the diffusivity of Fe-atoms in Cu-layer (DFe in Cu-layer). Ti-atoms reached Cu|SS interface but Fe-atoms were unable to reach TiA|Cu interface. It was observed that DB fractured at Cu|SS interface when processed for shorter bonding-time interval, whereas the DB processed for longer bonding-time interval fractured apparently at the middle of Cu-foil region predominantly due to the existence of brittle Cu-Fe-Ti-based intermetallics.

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

The Effect of Palladium Additions on the Solidus/Liquidus Temperatures and Wetting Properties of Ag-CuO Based Air Brazes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darsell, Jens T.; Weil, K. Scott

2007-05-16

As a means of increasing the use temperature of ceramic-ceramic and ceramic-metal air brazes, palladium was investigated as possible ternary addition to the currently employed silver - copper oxide system. The silver component was directly substituted with palladium to form the following series of alloys: (100-y)[(100-z)Pd - (z)Ag] - (y)CuOx where y = 0 - 34 mol% CuOx, z = 50 - 100 mol% silver, and x = 0, 0.5, and 1, denoting copper metal, Cu2O, or CuO. From differential scanning calorimetry, it was determined that the addition of palladium causes an increase in the solidus and liquidus temperatures ofmore » the resulting Pd-Ag-CuO brazes. In general, the liquidus was found to increase by approximately 220°C for the (100-y)(25Pd - 75Ag) - (z)CuOx filler metal compositions relative to comparable Ag-CuOx alloys. Likewise, the solidus was found to increase for these alloys, respectively by 185°C and 60°C, respectively for CuOx contents of y = 0 - 1mol% and 4 - 10 mol%. For the (100-y)(50Pd - 50Ag) - (y)CuOx alloys, the solidus increased between 280 - 390°C over a copper oxide compositional range of x = 0 to 8 mol%. It was determined from sessile drop experiments conducted on alumina substrates that in all cases the palladium causes an increase in the wetting angle relative to the corresponding binary braze. Alloy compositions of (100-y)(25Pd - 75Ag) - (y)CuOx displayed increased wetting angles of 5-20° relative to comparable binary compositions. (100-y)(50Pd - 50Ag) - (y)CuOx alloys exhibited an increase in contact angle of 10-60° and compositions containing less than 10 mol% CuOx were not able to wet the substrate. Scanning electron microscopy indicated that the microstructure of the braze consists of discrete CuOx precipitates in an alloyed silver-palladium matrix. In both the binary and ternary filler metal formulations, a reaction layer consisting of CuAlO2 was observed along the interface with the alumina substrate. This reaction product appears to be beneficial in promoting wetting by the remaining braze filler metal. However the formation of this layer is hindered as the concentration of palladium in the filler metal is increased, which appears to be the primary cause of poor wettability in these compositions, as indicated by the substantial amount of porosity found along the braze/substrate interface.« less

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill.

PubMed

Kong, Qingna; Yao, Jun; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill.

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors.

PubMed

Mainz, Roland; Walker, Bryce C; Schmidt, Sebastian S; Zander, Ole; Weber, Alfons; Rodriguez-Alvarez, Humberto; Just, Justus; Klaus, Manuela; Agrawal, Rakesh; Unold, Thomas

2013-11-07

The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ energy-dispersive X-ray diffraction and fluorescence analysis as well as by ex situ electron microscopy. The precursor films are heated in a closed volume inside a vacuum chamber in the presence of selenium vapor while diffraction and fluorescence signals are recorded. The presented results reveal that during the selenization the cations diffuse to the surface to form large grains on top of the nanoparticle layer and the selenization of the film takes place through two simultaneous reactions: (1) a direct and fast formation of large grained selenides, starting with copper selenide which is subsequently transformed into Cu2ZnSnSe4; and (2) a slower selenization of the remaining nanoparticles. As a consequence of the initial formation of copper selenides at the surface, the subsequent formation of CZTSe starts under Cu-rich conditions despite an overall Cu-poor composition of the film. The implications of this process path for the film quality are discussed. Additionally, the proposed growth model provides an explanation for the previously observed accumulation of carbon from the nanoparticle precursor beneath the large grained layer.

Alloying effect of copper on the corrosion properties of low-alloy steel for flue gas desulfurization system

NASA Astrophysics Data System (ADS)

Kim, Seon-Hong; Park, Sun-Ah; Kim, Jung-Gu; Shin, Kee-Sam; He, Yinsheng

2015-03-01

The alloying effect of Cu for a flue gas desulfurization materials was investigated using the electrochemical methods in the modified green death solution and the surface analyses. The test results demonstrated that the densely formed rust layer with high metallic Cu content improves the corrosion resistance of Cu-containing steel in the flue gas desulfurization (FGD) environment. The rust layer on the surface of the 0.02 wt% Cu steel, which has an insufficient Cu content, was less protective than others. The 0.05 wt% Cu steel represented the highest corrosion resistance due to the formation of the densely formed rust layer with optimum Cu content. Because the free standing Cu2S precipitates had the insoluble characteristic in highly acidic solution, it produced the relatively porous Cu-enriched layer on the 0.08 wt% Cu steel surface. From these phenomena, the corrosion resistance of specimen decreased as the Cu content of specimen increased from 0.05 wt% to 0.08 wt%.

Effect of immersion time in a modified green death solution on the rust layer of Cu-containing low-alloy steel

NASA Astrophysics Data System (ADS)

Kim, Seon-Hong; Kwon, Min-Seok; Kim, Jung-Gu

2017-01-01

The corrosion resistance of low-alloy steel containing 0.35 wt% copper, as a function of immersion time in a modified green death solution, was investigated using electrochemical methods and surface analysis. After 30 min of immersion, the steel surface was covered with a Cu-enriched film. Improvement of the film properties and increases in the corrosion resistance were realized for the immersion time up to 6 h due to the development of the Cu-enriched layer. However, the Cu particle was formed in the Cu-enriched layer for the immersion time beyond 6 h. Since the formation of the Cu particle generated a Cu-depletion region, micro-galvanic corrosion between the Cu particle and the Cu-depletion region lead to the localized film breakdown on the surface film. The localized film breakdown, which decreased the corrosion properties of the Cu-containing steel, was accelerated by the continuous formation of Cu particles in the rust layer.

Electronic absorption band broadening and surface roughening of phthalocyanine double layers by saturated solvent vapor treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinhyun; Yim, Sanggyu, E-mail: sgyim@kookmin.ac.kr

2012-10-15

Variations in the electronic absorption (EA) and surface morphology of three types of phthalocyanine (Pc) thin film systems, i.e. copper phthalocyanine (CuPc) single layer, zinc phthalocyanine (ZnPc) single layer, and ZnPc on CuPc (CuPc/ZnPc) double layer film, treated with saturated acetone vapor were investigated. For the treated CuPc single layer film, the surface roughness slightly increased and bundles of nanorods were formed, while the EA varied little. In contrast, for the ZnPc single layer film, the relatively high solubility of ZnPc led to a considerable shift in the absorption bands as well as a large increase in the surface roughnessmore » and formation of long and wide nano-beams, indicating a part of the ZnPc molecules dissolved in acetone, which altered their molecular stacking. For the CuPc/ZnPc film, the saturated acetone vapor treatment resulted in morphological changes in mainly the upper ZnPc layer due to the significantly low solubility of the underlying CuPc layer. The treatment also broadened the EA band, which involved a combination of unchanged CuPc and changed ZnPc absorption.« less

Giant magnetoresistance (GMR) behavior of electrodeposited NiFe/Cu multilayers: Dependence of non-magnetic and magnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Kuru, Hilal; Kockar, Hakan; Alper, Mursel

2017-12-01

Giant magnetoresistance (GMR) behavior in electrodeposited NiFe/Cu multilayers was investigated as a function of non-magnetic (Cu) and ferromagnetic (NiFe) layer thicknesses, respectively. Prior to the GMR analysis, structural and magnetic analyses of the multilayers were also studied. The elemental analysis of the multilayers indicated that the Cu and Ni content in the multilayers increase with increasing Cu and NiFe layer thickness, respectively. The structural studies by X-ray diffraction revealed that all multilayers have face centred cubic structure with preferred (1 1 0) crystal orientation as their substrates. The magnetic properties studied with the vibrating sample magnetometer showed that the magnetizations of the samples are significantly affected by the layer thicknesses. Saturation magnetisation, Ms increases from 45 to 225 emu/cm3 with increasing NiFe layer thickness. The increase in the Ni content of the multilayers with a small Fe content causes an increase in the Ms. And, the coercivities ranging from 2 to 24 Oe are between the soft and hard magnetic properties. Also, the magnetic easy axis of the multilayers was found to be in the film plane. Magnetoresistance measurements showed that all multilayers exhibited the GMR behavior. The GMR magnitude increases with increasing Cu layer thickness and reaches its maximum value of 10% at the Cu layer thickness of 1 nm, then it decreases. And similarly, the GMR magnitude increases and reaches highest value of pure GMR (10%) for the NiFe layer thickness of 3 nm, and beyond this point GMR decreases with increasing NiFe layer thickness. Some small component of the anisotropic magnetoresistance was also observed at thin Cu and thick NiFe layer thicknesses. It is seen that the highest GMR values up to 10% were obtained in electrodeposited NiFe/Cu multilayers up to now. The structural, magnetic and magnetoresistance properties of the NiFe/Cu were reported via the variations of the thicknesses of Cu and NiFe layers with stressing the role of layer thicknesses on the high GMR behavior.

Temperature-assisted morphological transition in CuPc thin films

NASA Astrophysics Data System (ADS)

Bae, Yu Jeong; Pham, Thi Kim Hang; Kim, Tae Hee

2016-05-01

Ex-situ and in-situ morphological analyses were performed for Cu-phthalocyanine (CuPc) organic semiconductor films by using atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED). The focus was the effects of post-annealing on the structural characteristics of CuPc films grown on MgO(001) layers by using an ultra-high-vacuum thermal evaporator. Sphere-to-nanofibril and 2-D to 3-D morphological transitions were observed with increasing CuPc thickness beyond 3 nm. The surface morphology and the crystallinity were drastically improved after an additional cooling of the post-annealed CuPc films thinner than 3 nm. Our results highlight that molecular orientation and structural ordering can be effectively controlled by using different temperature treatments and a proper combination of material, film thickness, and substrate.

Core/shell CuO/Al Nanorods Thermite Film Based on Electrochemical Anodization.

PubMed

Yu, Chunpei; Zhang, Wenchao; Hu, Bin; Ni, Debin; Zheng, Zilong; Liu, Jingping; Ma, Kefeng; Ren, Wei

2018-06-13

In this study, a new method was reported for the fabrication of the nanostructured CuO/Al thermite film on the Cu substrate. The CuO nanorods (NRs) arrays vertically grew from the Cu surfaces by electrochemical anodization processes, followed by the deposition of an Al layer on the CuO NRs via magnetron sputtering to form a core/shell CuO/Al nanothermite film, whose component, structure and morphology were subsequently characterized. In addition, the energy-release characteristics of the obtained nanothermite film was investigated using thermal analyses and laser ignition tests. All evidences demonstrate that the obtained CuO/Al is of a uniform structure and superb energy performance. Impressively, this resulted material is potentially useful in the applications of functional energetic chips due to its easy integration with microelectromechanical systems (MEMS) technologies. © 2018 IOP Publishing Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Himanshu; Ganguli, Tapas; Deb, S. K.

The in-situ growth of CuO nanowires was studied by Energy Dispersive X-ray Diffraction (EDXRD) to observe the mechanism of growth. The study was carried out for comparison at two temperatures—at 500 °C, the optimum temperature of the nanowires growth, and at 300 °C just below the temperature range of the growth. The in situ observation revealed the successive oxidation of Cu foil to Cu{sub 2}O layer and finally to CuO layer. Further analysis showed the presence of a compressive stress in CuO layer due to interface at CuO and Cu{sub 2}O layers. The compressive stress was found to increase withmore » the growth of the nanowires at 500 °C while it relaxed with the growth of CuO layer at 300 °C. The present results do not support the existing model of stress relaxation induced growth of nanowires. Based on the detailed Transmission Electron Microscope, Scanning Electron Microscope, and EDXRD results, a microstructure based growth model has been suggested.« less

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

Cyclic Thermal Stress-Induced Degradation of Cu Metallization on Si3N4 Substrate at -40°C to 300°C

NASA Astrophysics Data System (ADS)

Lang, Fengqun; Yamaguchi, Hiroshi; Nakagawa, Hiroshi; Sato, Hiroshi

2015-01-01

The high-temperature reliability of active metal brazed copper (AMC) on Si3N4 ceramic substrates used for fabricating SiC high-temperature power modules was investigated under harsh environments. The AMC substrate underwent isothermal storage at 300°C for up to 3000 h and a thermal cycling test at -40°C to 300°C for up to 3000 cycles. During isothermal storage at 300°C, the AMC substrate exhibited high reliability, characterized by very little deformation of the copper (Cu) layer, low crack growth, and low oxidation rate of the Cu layer. Under thermal cycling conditions at -40°C to 300°C, no detachment of the Cu layer was observed even after the maximum 3000 cycles of the experiment. However, serious deformation of the Cu layer occurred and progressed as the number of thermal cycles increased, thus significantly roughening the surface of the Cu metallized layer. The cyclic thermal stress led to a significant increase in the crack growth and oxidation of the Cu layer. The maximum depth of the copper oxides reached up to 5/6 of the Cu thickness. The deformation of the Cu layer was the main cause of the decrease of the bond strength under thermal cycling conditions. The shear strength of the SiC chips bonded on the AMC substrate with a Au-12 wt.%Ge solder decreased from the original 83 MPa to 14 MPa after 3000 cycles. Therefore, the cyclic thermal stress destroyed the Cu oxides and enhanced the oxidation of the Cu layer.

Investigation of Pd-Modified Ag-CuO Air Braze Filler Metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darsell, Jens T.; Hardy, John S.; Kim, Jin Yong

2006-01-10

Palladium was added as a ternary component to a series of silver - copper oxide alloys in an effort to increase the use temperature of these materials for potential ceramic air brazing applications. Large portions of the silver component of the Ag-CuO system were substituted by palladium forming the following alloys: (100-y)[(100-z)Pd - (z)Ag] - (y)CuOx where y = 0 - 34 mol% CuOx, z = 50 - 100 mol% silver, and x = 0, 0.5, and 1, denoting copper metal, Cu2O, or CuO. From differential scanning calorimetry, it was determined that the addition of palladium causes an increase inmore » the solidus and liquidus temperatures of the resulting Pd-Ag-CuO brazes. In general, the liquidus was found to increase by approximately 220°C for the (100-y)(25Pd - 75Ag) - (z)CuOx filler metal compositions relative to comparable Ag-CuOx alloys. Likewise, the solidus was found to increase for these alloys, respectively by 185°C and 60°C, respectively for CuOx contents of y = 0 - 1mol% and 4 - 10 mol%. For the (100-y)(50Pd - 50Ag) - (y)CuOx alloys, the solidus increased between 280 - 390°C over a copper oxide compositional range of x = 0 to 8 mol%. It was determined from sessile drop experiments that palladium causes an increase in the wetting angle for all of the samples tested. Alloy compositions of (100-y)(25Pd - 75Ag) - (y)CuOx displayed increased wetting angles of 5-20° relative to comparable binary compositions. (100-y)(50Pd - 50Ag) - (y)CuOx alloys exhibited an increase in contact angle of 10-60° and compositions containing less than 10 mol% CuOx were not able to wet the substrate. Scanning electron microscopy indicates that the microstructure of the braze consists of Ag-Pd solid solution with CuOx precipitates. In general, a reaction layer consisting of CuAlO2 forms adjacent to the alumina substrate. However, the formation of this layer is apparently hindered by the addition of large amounts of palladium, causing poor wetting behavior, as denoted by substantial porosity found along the braze/substrate interface. The reduction in wettability can be compensated by increasing the CuO content slightly.« less

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

PubMed

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

STRESS-INDUCED ASYMMETRIC MAGNETOIMPEDANCE EFFECT IN Ni80Fe20/Cu COMPOSITE WIRES

NASA Astrophysics Data System (ADS)

Lv, Wenxing; Li, Xin; Xie, Wenhui; Zhao, Qiang; Zhao, Zhenjie

The magnetoimpedance effect of Ni80Fe20/Cu composited wires was experimentally investigated by varying the Ni80Fe20 coating thickness. An asymmetric MI behavior with a tunable linear region around zero magnetic field by altering the thickness of Ni80Fe20 layer was demonstrated. And the MI behavior was governed by the different anisotropy induced by the residual local stress in the multi-layer region. In addition, our investigation also suggested that the interactions between interface phase and outer phase of coating layer decreased with thickness, resulting in the domination of the asymmetric MI characteristic. For thickness of 485nm, the sensitivity was up to 225%/Oe from -2 Oe to 2 Oe, providing a promising candidate for linear sensor application.

Orienting the Microstructure Evolution of Copper Phthalocyanine as an Anode Interlayer in Inverted Polymer Solar Cells for High Performance.

PubMed

Li, Zhiqi; Liu, Chunyu; Zhang, Xinyuan; Li, Shujun; Zhang, Xulin; Guo, Jiaxin; Guo, Wenbin; Zhang, Liu; Ruan, Shengping

2017-09-20

Recent advances in the interfacial modification of inverted-type polymer solar cells (PSCs) have resulted from controlling the surface energy of the cathode-modified layer (TiO 2 or ZnO) to enhance the short-circuit current (J sc ) or optimizing the contact morphology of the cathode (indium tin oxide or fluorine-doped tin oxide) and active layer to increase the fill factor. Herein, we report that the performance enhancement of PSCs is achieved by incorporating a donor macromolecule copper phthalocyanine (CuPc) as an anode modification layer. Using the approach based on orienting the microstructure evolution, uniformly dispersed island-shaped CuPc spot accumulations are built on the top of PTB7:PC 71 BM blend film, leading to an efficient spectral absorption and photogenerated exciton splitting. The best power conversion efficiency of PSCs is increased up to 9.726%. In addition to the enhanced light absorption, the tailored anode energy level alignment and optimized boundary morphology by incorporating the CuPc interlayer boost charge extraction efficiency and suppress the interfacial molecular recombination. These results demonstrate that surface morphology induction through molecular deposition is an effective method to improve the performance of PSCs, which reveals the potential implications of the interlayer between the organic active layer and the electrode buffer layer.

Cu2O-based solar cells using oxide semiconductors

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0.025)2O3 thin film with a thickness of approximately 60 nm. In addition, a Voc of 0.96 V and an η of 5.4% were obtained in a MgF2/AZO/n-AGMZO/p-Cu2O:Na heterojunction solar cell.

Aminosilanization nanoadhesive layer for nanoelectric circuits with porous ultralow dielectric film.

PubMed

Zhao, Zhongkai; He, Yongyong; Yang, Haifang; Qu, Xinping; Lu, Xinchun; Luo, Jianbin

2013-07-10

An ultrathin layer is investigated for its potential application of replacing conventional diffusion barriers and promoting interface adhesion for nanoelectric circuits with porous ultralow dielectrics. The porous ultralow dielectric (k ≈ 2.5) substrate is silanized by 3-aminopropyltrimethoxysilane (APTMS) to form the nanoadhesive layer by performing oxygen plasma modification and tailoring the silanization conditions appropriately. The high primary amine content is obtained in favor of strong interaction between amino groups and copper. And the results of leakage current measurements of metal-oxide-semiconductor capacitor structure demonstrate that the aminosilanization nanoadhesive layer can block copper diffusion effectively and guarantee the performance of devices. Furthermore, the results of four-point bending tests indicate that the nanoadhesive layer with monolayer structure can provide the satisfactory interface toughness up to 6.7 ± 0.5 J/m(2) for Cu/ultralow-k interface. Additionally, an annealing-enhanced interface toughness effect occurs because of the formation of Cu-N bonding and siloxane bridges below 500 °C. However, the interface is weakened on account of the oxidization of amines and copper as well as the breaking of Cu-N bonding above 500 °C. It is also found that APTMS nanoadhesive layer with multilayer structure provides relatively low interface toughness compared with monolayer structure, which is mainly correlated to the breaking of interlayer hydrogen bonding.

Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, Y.; Ozaki, S.; Nakamura, T.

2014-06-19

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoridemore » residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.« less

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill

PubMed Central

Kong, Qingna; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill. PMID:28044139

Properties of copper (fluoro-)phthalocyanine layers deposited on epitaxial graphene.

PubMed

Ren, Jun; Meng, Sheng; Wang, Yi-Lin; Ma, Xu-Cun; Xue, Qi-Kun; Kaxiras, Efthimios

2011-05-21

We investigate the atomic structure and electronic properties of monolayers of copper phthalocyanines (CuPc) deposited on epitaxial graphene substrate. We focus in particular on hexadecafluorophthalocyanine (F(16)CuPc), using both theoretical and experimental (scanning tunneling microscopy - STM) studies. For the individual CuPc and F(16)CuPc molecules, we calculated the electronic and optical properties using density functional theory (DFT) and time-dependent DFT and found a red-shift in the absorption peaks of F(16)CuPc relative to those of CuPc. In F(16)CuPc, the electronic wavefunctions are more polarized toward the electronegative fluorine atoms and away from the Cu atom at the center of the molecule. When adsorbed on graphene, the molecules lie flat and form closely packed patterns: F(16)CuPc forms a hexagonal pattern with two well-ordered alternating α and β stripes while CuPc arranges into a square lattice. The competition between molecule-substrate and intermolecular van der Waals interactions plays a crucial role in establishing the molecular patterns leading to tunable electron transfer from graphene to the molecules. This transfer is controlled by the layer thickness of, or the applied voltage on, epitaxial graphene resulting in selective F(16)CuPc adsorption, as observed in STM experiments. In addition, phthalocyanine adsorption modifies the electronic structure of the underlying graphene substrate introducing intensity smoothing in the range of 2-3 eV below the Dirac point (E(D)) and a small peak in the density of states at ∼0.4 eV above E(D). © 2011 American Institute of Physics.

Adsorbate-driven morphological changes on Cu(111) nano-pits

DOE PAGES

Mudiyanselage, K.; Xu, F.; Hoffmann, F. M.; ...

2014-12-09

Adsorbate-driven morphological changes of pitted-Cu(111) surfaces have been investigated following the adsorption and desorption of CO and H. The morphology of the pitted-Cu(111) surfaces, prepared by Ar + sputtering, exposed a few atomic layers deep nested hexagonal pits of diameters from 8 to 38 nm with steep step bundles. The roughness of pitted-Cu(111) surfaces can be healed by heating to 450-500 K in vacuum. Adsorption of CO on the pitted-Cu(111) surface leads to two infrared peaks at 2089-2090 and 2101-2105 cm -1 for CO adsorbed on under-coordinated sites in addition to the peak at 2071 cm -1 for CO adsorbedmore » on atop sites of the close-packed Cu(111) surface. CO adsorbed on under-coordinated sites is thermally more stable than that of atop Cu(111) sites. Annealing of the CO-covered surface from 100 to 300 K leads to minor changes of the surface morphology. In contrast, annealing of a H covered surface to 300 K creates a smooth Cu(111) surface as deduced from infrared data of adsorbed CO and scanning tunnelling microscopy (STM) imaging. The observation of significant adsorbate-driven morphological changes with H is attributed to its stronger modification of the Cu(111) surface by the formation of a sub-surface hydride with a hexagonal structure, which relaxes into the healed Cu(111) surface upon hydrogen desorption. These morphological changes occur ~150 K below the temperature required for healing of the pitted-Cu(111) surface by annealing in vacuum. In contrast, the adsorption of CO, which only interacts with the top-most Cu layer and desorbs by 160 K, does not significantly change the morphology of the pitted-Cu(111) surface.« less

Back surface studies of Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Simchi, Hamed

Cu(In,Ga)Se2 thin film solar cells have attracted a lot of interest because they have shown the highest achieved efficiency (21%) among thin film photovoltaic materials, long-term stability, and straightforward optical bandgap engineering by changing relative amounts of present elements in the alloy. Still, there are several opportunities to further improve the performance of the Cu(In,Ga)Se2 devices. The interfaces between layers significantly affect the device performance, and knowledge of their chemical and electronic structures is essential in identifying performance limiting factors. The main goal of this research is to understand the characteristics of the Cu(In,Ga)Se2-back contact interface in order to design ohmic back contacts for Cu(In,Ga)Se2-based solar cells with a range of band gaps and device configurations. The focus is on developing either an opaque or transparent ohmic back contact via surface modification or introduction of buffer layers in the back surface. In this project, candidate back contact materials have been identified based on modeling of band alignments and surface chemical properties of the absorber layer and back contact. For the first time, MoO3 and WO 3 transparent back contacts were successfully developed for Cu(In,Ga)Se 2 solar cells. The structural, optical, and surface properties of MoO 3 and WO3 were optimized by controlling the oxygen partial pressure during reactive sputtering and post-deposition annealing. Valence band edge energies were also obtained by analysis of the XPS spectra and used to characterize the interface band offsets. As a result, it became possible to illuminate of the device from the back, resulting in a recently developed "backwall superstrate" device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices in the absorber thickness range 0.1-0.5 microm. Further enhancements were achieved by introducing moderate amounts of Ag into the Cu(In,Ga)Se2 lattice during the co-evaporation method resulting in a 9.7% cell (with 0.3 microm thickness) which has the highest efficiency reported for ultrathin CIGS solar cells to date. In addition, sulfized back contacts including ITO-S and MoS 2 are compared. Interface properties of different contact layers with (Ag,Cu)(In,Ga)Se2 absorber layers with various Ga/(Ga+In) and Ag/(Ag+Cu) ratios are discussed based on the XPS analysis and thermodynamics of reactions.

Adsorption, hydrogenation and dehydrogenation of C2H on a CoCu bimetallic layer

NASA Astrophysics Data System (ADS)

Wu, Donghai; Yuan, Jinyun; Yang, Baocheng; Chen, Houyang

2018-05-01

In this paper, adsorption, hydrogenation and dehydrogenation of C2H on a single atomic layer of bimetallic CoCu were investigated using first-principles calculations. The CoCu bimetallic layer is formed by Cu replacement of partial Co atoms on the top layer of a Co(111) surface. Our adsorption and reaction results showed those sites, which have stronger adsorption energy of C2H, possess higher reactivity. The bimetallic layer possesses higher reactivity than either of the pure monometallic layer. A mechanism of higher reactivity of the bimetallic layer is proposed and identified, i.e. in the bimetallic catalyst, the catalytic performance of one component is promoted by the second component, and in our work, the catalytic performance of Co atoms in the bimetallic layer are improved by introducing Cu atoms, lowing the activation barrier of the reaction of C2H. The bimetallic layer could tune adsorption and reaction of C2H by modulating the ratio of Co and Cu. Results of adsorption energies and adsorption configurations reveal that C2H prefers to be adsorbed in parallel on both the pure Co metallic and CoCu bimetallic layers, and Co atoms in subsurface which support the metallic or bimetallic layer have little effect on C2H adsorption. For hydrogenation reactions, the products greatly depend on the concentration and initial positions of hydrogen atoms, and the C2H hydrogenation forming acetylene is more favorable than forming vinylidene in both thermodynamics and kinetics. This study would provide fundamental guidance for hydrocarbon reactions on Co-based and/or Cu-based bimetallic surface chemistry and for development of new bimetallic catalysts.

Effect of titanium addition on the thermal properties of diamond/cu-ti composites fabricated by pressureless liquid-phase sintering technique.

PubMed

Chung, Chih-Yu; Chu, Chao-Hung; Lee, Mu-Tse; Lin, Chun-Ming; Lin, Su-Jien

2014-01-01

In this study, minor-addition elements such as Si, Co, Cr, W, Mo, and Ti were added to matrix to improve the wettability between the diamonds and Cu matrix. The pressureless liquid-phase sintering technique adopted in this study provides a low-cost method for producing diamond/Cu composites with high potential for industrial mass production. Thermal properties of the diamond/Cu-Ti composites fabricated by pressureless liquid-phase sintering at 1373 K with variation in Ti contents were thoroughly investigated. XRD and TEM analysis show that TiC layer formed in the interface between Cu and diamond. The composites exhibited thermal conductivity as high as 620 W/m · K for 50 vol% diamond/Cu-0.6 at % Ti composite with diamond particle size of 300 µm. This value comes up to 85% of the thermal conductivity calculated by the Hasselman and Johnson (H-J) theoretical analysis. Under these conditions, a suitable coefficient of thermal expansion of 6.9 ppm/K was obtained.

Effect of Titanium Addition on the Thermal Properties of Diamond/Cu-Ti Composites Fabricated by Pressureless Liquid-Phase Sintering Technique

PubMed Central

Chung, Chih-Yu; Chu, Chao-Hung; Lee, Mu-Tse; Lin, Chun-Ming; Lin, Su-Jien

2014-01-01

In this study, minor-addition elements such as Si, Co, Cr, W, Mo, and Ti were added to matrix to improve the wettability between the diamonds and Cu matrix. The pressureless liquid-phase sintering technique adopted in this study provides a low-cost method for producing diamond/Cu composites with high potential for industrial mass production. Thermal properties of the diamond/Cu-Ti composites fabricated by pressureless liquid-phase sintering at 1373 K with variation in Ti contents were thoroughly investigated. XRD and TEM analysis show that TiC layer formed in the interface between Cu and diamond. The composites exhibited thermal conductivity as high as 620 W/m·K for 50 vol% diamond/Cu-0.6  at % Ti composite with diamond particle size of 300 µm. This value comes up to 85% of the thermal conductivity calculated by the Hasselman and Johnson (H-J) theoretical analysis. Under these conditions, a suitable coefficient of thermal expansion of 6.9 ppm/K was obtained. PMID:24715816

Hierarchical concave layered triangular PtCu alloy nanostructures: rational integration of dendritic nanostructures for efficient formic acid electrooxidation.

PubMed

Wu, Fengxia; Lai, Jianping; Zhang, Ling; Niu, Wenxin; Lou, Baohua; Luque, Rafael; Xu, Guobao

2018-05-08

The rational construction of multi-dimensional layered noble metal nanostructures is a great challenge since noble metals are not layer-structured materials. Herein, we report a one-pot hydrothermal synthetic method for PtCu hierarchical concave layered triangular (HCLT) nanostructures using dl-carnitine, KI, poly(vinylpyrrolidone), CuCl2, and H2PtCl6. The PtCu HCLT nanostructure is comprised of multilayered triangular dendrites. Its layer number is tunable by changing dl-carnitine concentrations, and the concavity/convexity of the PtCu triangle nanostructures is tunable by changing the H2PtCl6/CuCl2 ratio or KI concentrations. Hierarchical trigonal bipyramid nanoframes are also obtained under certain conditions. Because of its advantageous nanostructure and bimetallic synergetic effect, the obtained PtCu HCLT nanostructure exhibits enhanced electrocatalytic activity and prolonged stability to formic acid oxidation compared to commercial Pt black, Pd/C and some other nanostructures.

Effect of deposition temperature on thermal stabilities of copper-carbon films in barrier-less Cu metallization

NASA Astrophysics Data System (ADS)

Zhu, Huan; Fu, Zhiqiang; Xie, Qi; Yue, Wen; Wang, Chengbiao; Kang, Jiajie; Zhu, Lina

2018-01-01

Copper-carbon alloy films have been applied in barrier-less Cu metallization as seed layers for improving the thermal stabilities. The effect of the deposition temperature on the microstructure and properties of C-doped Cu films on Si substrates was investigated. The films were prepared by ion beam-assisted deposition at various deposition temperatures by co-sputtering of Cu and graphite targets. No inter-diffusion between Cu and Si was observed in Cu(C) films throughout this experiment, because XRD patterns corresponding to their deep-level reaction product, namely, Cu3Si, were not observed in XRD patterns and EDS results of Cu(C) films. Amorphous carbon layer and SiC layer were found in the interface of Cu(C) as-deposited films when deposition temperature rose to 100 °C by TEM, high-resolution image and Fourier transformation pattern. The Cu(C) films deposited at 100 °C had the best thermal stabilities and the lowest electrical resistivity of 4.44 μW cm after annealing at 400 °C for 1 h. Cu agglomeration was observed in Cu(C) alloy films with deposition temperatures of 200, 300 and 400 °C, and the most serious agglomeration occurred in Cu(C) films deposited at 200 °C. Undesired Cu agglomeration resulted in a sharp increase in the resistivity after annealing at 300 °C for 1 h. The deposition temperature of 100 °C reflected the superior thermal stabilities of Cu(C) seed layers compared with those of other layers.

Artificially layered films of CuBa{sub 2} (Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} grown using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aruta, C.; Balestrino, G.; Martellucci, S.

We have shown that the pulsed laser deposition technique (PLD) can be successfully used to grow artificially layered films of the CuBa{sub 2}(Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} compound using only two targets having nominal composition BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y}, respectively. n was varied between 2 and 5. We have demonstrated, by a kinematic analysis of the x-ray diffraction spectra that the average random discrete thickness fluctuations which affect both the BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} layers are much smaller than one atomic layer. Such features are confirmed by the appearance of sharp peaks evenmore » for the n=2 artificially layered structure where only one (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} cell is deposited in the stacking sequence. These results show that truly new structures can be obtained by a layer by layer deposition technique with a low interfacial disorder and give strong support to the idea of synthesizing new artificial high T{sub c} structures by the PLD technique.{copyright} {ital 1997 American Institute of Physics.}« less

A novel single-stranded DNA detection method based on organic semiconductor heterojunction

NASA Astrophysics Data System (ADS)

Gu, Wen; Liu, Hongbo; Zhang, Xia; Zhang, Hao; Chen, Xiong; Wang, Jun

2016-12-01

We demonstrate a novel DNA detection method with low-cost and disposable advantages by utilizing F16CuPc/CuPc planar organic heterojunction device. Single-stranded DNA (ssDNA) molecules have been well immobilized on the surface of CuPc film observed by atomic force microscopy, producing an obvious electrical response of the device. The conductivity of the organic heterojunction film was significantly increased by ssDNA immobilization because ssDNA molecules brought additional positive charges at heterojunction interface. Furthermore, the thickness dependence of CuPc upper layer on the electrical response was studied to optimize the sensitivity. This study will be helpful for the development of organic heterojunction based biosensors.

Cu6Sn5 Whiskers Precipitated in Sn3.0Ag0.5Cu/Cu Interconnection in Concentrator Silicon Solar Cells Solder Layer

PubMed Central

Zhang, Liang; Liu, Zhi-quan; Yang, Fan; Zhong, Su-juan

2017-01-01

Cu6Sn5 whiskers precipitated in Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer were found and investigated after reflow soldering and during aging. Ag3Sn fibers can be observed around Cu6Sn5 whiskers in the matrix microstructure, which can play an active effect on the reliability of interconnection. Different morphologies of Cu6Sn5 whiskers can be observed, and hexagonal rod structure is the main morphology of Cu6Sn5 whiskers. A hollow structure can be observed in hexagonal Cu6Sn5 whiskers, and a screw dislocation mechanism was used to represent the Cu6Sn5 growth. Based on mechanical property testing and finite element simulation, Cu6Sn5 whiskers were regarded as having a negative effect on the durability of Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer. PMID:28772686

Superconducting order parameter fluctuations in NbN/NiCu and NbTiN/NiCu bilayer nanostripes for photon detection

NASA Astrophysics Data System (ADS)

Aichner, Bernd; Jausner, Florian; Zechner, Georg; Mühlgassner, Rita; Lang, Wolfgang; Klimov, Andrii; Puźniak, Roman; Słysz, Wojciech; Guziewicz, Marek; Kruszka, Renata; Wegrzecki, Maciej; Sobolewski, Roman

2017-05-01

Thermodynamic fluctuations of the superconducting order parameter in NbN/NiCu and NbTiN/NiCu superconductor/ferromagnet (S/F) thin bilayers patterned to microbridges are investigated. Plain NbN and NbTiN films served as reference materials for the analyses. The samples were grown using dc-magnetron sputtering on chemically cleaned sapphire single-crystal substrates. After rapid thermal annealing at high temperatures, the superconducting films were coated with NiCu overlays, using co-sputtering. The positive magnetoresistance of the superconducting single layers is very small in the normal state but with a sharp upturn close to the superconducting transition, a familiar signature of superconducting fluctuations. The fluctuation-enhanced conductivity (paraconductivity) of the NbN and NbTiN single layer films is slightly larger than the prediction of the parameter-free Aslamazov-Larkin theory for order-parameter fluctuations in two-dimensional superconductors. The addition of a ferromagnetic top layer, however, changes the magnetotransport properties significantly. The S/F bilayers show a negative magnetoresistance up to almost room temperature, while the signature of fluctuations is similar to that in the plain films, demonstrating the relevance of both ferromagnetic and superconducting effects in the S/F bilayers. The paraconductivity is reduced below theoretical predictions, in particular in the NbTiN/NiCu bilayers. Such suppression of the fluctuation amplitude in S/F bilayers could be favorable to reduce dark counts in superconducting photon detectors and lead the way to enhance their performance.

Giant dielectric constant in CaCu3Ti4O12 nanoceramics

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.

2013-06-01

Nanoceramics of CaCu3Ti4O12 (CCTO) were synthesized by mechanosynthesis and spark plasma sintering with grain size of 150-200 nm. Giant dielectric constant properties are observed in the CCTO nanoceramics due to internal barrier layer capacitance (IBLC) effects. Impedance spectroscopy data suggest that the presence of resistive grain boundaries in addition to resistive domain boundaries is the origin of the IBLCs in CCTO nanoceramics.

Direct deposit laminate nanocomposites with enhanced propellent properties.

PubMed

Li, Xiangyu; Guerieri, Philip; Zhou, Wenbo; Huang, Chuan; Zachariah, Michael R

2015-05-06

One of the challenges in the use of energetic nanoparticles within a polymer matrix for propellant applications is obtaining high particle loading (high energy density) while maintaining mechanical integrity and reactivity. In this study, we explore a new strategy that utilizes laminate structures. Here, a laminate of alternating layers of aluminum nanoparticle (Al-NPs)/copper oxide nanoparticle (CuO-NPs) thermites in a polyvinylidene fluoride (PVDF) reactive binder, with a spacer layer of PVDF was fabricated by a electrospray layer-by-layer deposition method. The deposited layers containing up to 60 wt % Al-NPs/CuO-NPs thermite are found to be uniform and mechanically flexible. Both the reactive and mechanical properties of laminate significantly outperformed the single-layer structure with the same material composition. These results suggest that deploying a multilayer laminate structure enables the incorporation of high loadings of energetic materials and, in some cases, enhances the reactive properties over the corresponding homogeneous structure. These results imply that an additive manufacturing approach may yield significant advantages in developing a tailored architecture for advanced propulsion systems.

Influence of Al/CuO reactive multilayer films additives on exploding foil initiator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou Xiang; Shen Ruiqi; Ye Yinghua

2011-11-01

An investigation on the influence of Al/CuO reactive multilayer films (RMFs) additives on exploding foil initiator was performed in this paper. Cu film and Cu/Al/CuO RMFs were produced by using standard microsystem technology and RF magnetron sputtering technology, respectively. Scanning electron microscopy characterization revealed the distinct layer structure of the as-deposited Al/CuO RMFs. Differential scanning calorimetry was employed to ascertain the amount of heat released in the thermite reaction between Al films and CuO films, which was found to be 2024 J/g. Electrical explosion tests showed that 600 V was the most matching voltage for our set of apparatus. Themore » explosion process of two types of films was observed by high speed camera and revealed that compared with Cu film, an extra distinct combustion phenomenon was detected with large numbers of product particles fiercely ejected to a distance of about six millimeters for Cu/Al/CuO RMFs. By using the atomic emission spectroscopy double line technique, the reaction temperature was determined to be about 6000-7000 K and 8000-9000 K for Cu film and Cu/Al/CuO RMFs, respectively. The piezoelectricity of polyvinylidene fluoride film was employed to measure the average velocity of the slapper accelerated by the explosion of the films. The average velocities of the slappers were calculated to be 381 m/s and 326 m/s for Cu film and Cu/Al/CuO RMFs, respectively, and some probable reasons were discussed with a few suggestions put forward for further work.« less

Influence of Al/CuO reactive multilayer films additives on exploding foil initiator

NASA Astrophysics Data System (ADS)

Zhou, Xiang; Shen, Ruiqi; Ye, Yinghua; Zhu, Peng; Hu, Yan; Wu, Lizhi

2011-11-01

An investigation on the influence of Al/CuO reactive multilayer films (RMFs) additives on exploding foil initiator was performed in this paper. Cu film and Cu/Al/CuO RMFs were produced by using standard microsystem technology and RF magnetron sputtering technology, respectively. Scanning electron microscopy characterization revealed the distinct layer structure of the as-deposited Al/CuO RMFs. Differential scanning calorimetry was employed to ascertain the amount of heat released in the thermite reaction between Al films and CuO films, which was found to be 2024 J/g. Electrical explosion tests showed that 600 V was the most matching voltage for our set of apparatus. The explosion process of two types of films was observed by high speed camera and revealed that compared with Cu film, an extra distinct combustion phenomenon was detected with large numbers of product particles fiercely ejected to a distance of about six millimeters for Cu/Al/CuO RMFs. By using the atomic emission spectroscopy double line technique, the reaction temperature was determined to be about 6000-7000 K and 8000-9000 K for Cu film and Cu/Al/CuO RMFs, respectively. The piezoelectricity of polyvinylidene fluoride film was employed to measure the average velocity of the slapper accelerated by the explosion of the films. The average velocities of the slappers were calculated to be 381 m/s and 326 m/s for Cu film and Cu/Al/CuO RMFs, respectively, and some probable reasons were discussed with a few suggestions put forward for further work.

Effect of Yttrium Addition on the Microstructure and Mechanical Properties of Cu-Rich Nano-phase Strengthened Ferritic Steel

NASA Astrophysics Data System (ADS)

Liu, Hongyu; He, Jibai; Luan, Guoqing; Ke, Mingpeng; Fang, Haoyan; Lu, Jianduo

2018-03-01

Due to the brittle problem of Cu-rich nano-phase strengthened ferritic steel (CNSFS) after air aging, the effect of Y addition in CNSFS was systemically investigated in the present work. The microstructure, tensile fracture morphology and oxide layer of the steels were surveyed by optical microscope and scanning electron microscope. Transmission electron microscope with the combination of energy-dispersive x-ray spectroscopy and selected area electron diffraction was used to analyze the morphology, size, number density, chemical compositions and crystal structure for nano-crystalline precipitates. Microstructural examinations of the nano-crystalline precipitates show that Cu-rich precipitates and Y compounds in the range of 2-10 and 50-100 nm, respectively, form in the Y-containing steel; meanwhile, the average size of nano-crystalline precipitates in Y-containing steel is larger, but the number density is lower, and the ferritic grains are refined. Furthermore, the tensile strength and ductility of Y-containing steel after air aging are improved, whereas the tensile strength is enhanced and the ductility decreased after vacuum aging. The drag effect of Y makes the oxide layer thinner and be compacted. Tensile properties of CNSFS after air aging are improved due to the refined grains, antioxidation and purification by the addition of Y.

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method.

PubMed

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-03

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe₂ absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe₂ precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe₂ absorber layers. After spraying on Mo/glass substrates, the CuInSe₂ thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N₂ as atmosphere. When the CuInSe₂ thin films were annealed, without extra Se or H₂Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe₂ absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe₂ absorber layers could be controlled as the volume of used dispersed CuInSe₂-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe₂ absorber layers obtained by the Spray Coating Method.

Effect of Pd Interlayer on Electrochemical Properties of ENIG Surface Finish in 3.5 wt.% NaCl Solution

NASA Astrophysics Data System (ADS)

Nam, N. D.; Bui, Q. V.; Nhan, H. T.; Phuong, D. V.; Bian, M. Z.

2014-09-01

The corrosion resistance of a multilayered (NiP-Pd-Au) coating with various thicknesses of palladium (Pd) interlayer deposited on copper by an electroless method was investigated using electrochemical techniques including potentiodynamic polarization and electrochemical impedance spectroscopy. In addition, the surface finish was examined by x-ray diffraction analysis and scanning electron microscopy, and the contact angle of the liquid-solid interface was recorded. The corrosion resistance of the copper substrate was considerably improved by Pd interlayer addition. Increase of the thickness of the Pd interlayer enhanced the performance of the Cu-NiP-Pd-Au coating due to low porosity, high protective efficiency, high charge-transfer resistance, and contact angle. These are attributed to the diffusion of layers in the Cu-NiP-Pd-Au coating acting as a physical barrier layer, leading to the protection provided by the coating.

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

NASA Astrophysics Data System (ADS)

Gu, Wen; Xu, Tao; Zhang, Jianhua

2013-11-01

Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Critical CuI buffer layer surface density for organic molecular crystal orientation change

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol, E-mail: drlee@ssu.ac.kr

We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low thatmore » a large proportion of the substrate surface is bare.« less

Enhanced thermal stability of Cu alloy films by strong interaction between Ni and Zr (or Fe)

NASA Astrophysics Data System (ADS)

Zheng, Yuehong; Li, Xiaona; Cheng, Xiaotian; Li, Zhuming; Liu, Yubo; Dong, Chuang

2018-04-01

Low resistivity, phase stability and nonreactivity with surrounding dielectrics are the key to the application of Cu to ultra-large-scale integrated circuits. Here, a stable solid solution cluster model was introduced to design the composition of barrierless Cu-Ni-Zr (or Fe) seed layers. The third elements Fe and Zr were dissolved into Cu via a second element Ni, which is soluble in both Cu and Zr (or Fe). The films were prepared by magnetron sputtering on the single-crystal p-Si (1 0 0) wafers. Since the diffusion characteristics of the alloying elements are different, the effects of the strong interaction between Ni and Zr (or Fe) on the film’s stability and resistivity were studied. The results showed that a proper addition of Zr-Ni (Zr/Ni  ⩽  0.6/12) into Cu could form a large negative lattice distortion, which inhibits Cu-Si interdiffusion and enhances the stability of Cu film. When Fe-Ni was co-added into Cu, the lattice distortion of Cu reached a lower value, 0.0029 Å  ⩽  |Δa|  ⩽  0.0046 Å, and the films showed poor stability. Therefore, when the model is applied to the composition design of the films, the strong interaction between the elements and the addition ratio should be taken into consideration.

Ionothermal synthesis and structural transformation targeted by ion exchange in metal-1,3,5-benzenetricarboxylate compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Qing-Qing; State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002; Liu, Bing

Ionothermal reactions of 1,3,5-benzenetricarboxylate acid (H{sub 3}BTC) and Ni(NO{sub 3}){sub 2}, Co(NO{sub 3}){sub 2} and Cu(NO{sub 3}){sub 2} gave two discrete 32-membered ring-like allomers, [M{sub 2}(HBTC){sub 2}(NH{sub 2}CONH{sub 2}){sub 2}(H{sub 2}O){sub 4}]·3H{sub 2}O (M=Ni(1), Co(2)) and one layered [Cu{sub 2}(BTC)Cl(H{sub 2}O){sub 4}] (3). The weak interactions in 1 can be deconstructed to some degree in ion exchange by exploring the factors of divalent and trivalent metal species, metal concentration and soaking time, which are demonstrated by PXRD and N{sub 2} absorption. Cu{sup 2+} has the highest N{sub 2} adsorbance when soaking with 1, and 1 can keep structure stable whenmore » Cu{sup 2+} below 0.16 mol L{sup −1} and the soaking time within 24d. As Cu{sup 2+} beyond 0.16 mol L{sup −1} and the soaking time beyond 24d, the structure of compound 1 starts to transform with the crystal morphology from clear pale green to opaque blue. Ionothermal reactions of compound 1 with different Cu{sup 2+} amounts obtained Ni{sup 2+}-Cu{sup 2+} hetero complexes, whose PXRD patterns are similar to that of 3 and EDS indicates Cu{sup 2+}% increases with Cu{sup 2+} additions and close to 100% as Cu{sup 2+} being 1.6 mmol. It suggests that 3 is a controlled product and Cu{sup 2+} can transform discrete compound 1 into 2D compound 3. - Graphical abstract: Three compounds were synthesized through ionothermal reactions. The weak interactions in compound 1 can be deconstructed by ion exchange and discrete compound 1 can be transformed into layered compound 3. - Highlights: • Two discrete ring-like and one layered compounds were ionothermally synthesized. • Metal species, metal concentration and soaking time deconstruct the H-bondings in 1. • 1 can be transformed to 3 through ionothermal reaction, otherwise forbidden.« less

Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Lytvynenko, V. Yu.; Maslyanchuk, O. L.

2016-04-15

Optical and recombination losses in a Cu(In,Ga)Se{sub 2} thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuIn{sub 1–x}Ga{sub x}Se{sub 2} is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front andmore » rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p–n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se{sub 2} is proposed, which enhances the charge-accumulation efficiency.« less

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes

PubMed Central

2012-01-01

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer. PMID:23181826

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes.

PubMed

Bae, Yu Jeong; Lee, Nyun Jong; Kim, Tae Hee; Cho, Hyunduck; Lee, Changhee; Fleet, Luke; Hirohata, Atsufumi

2012-11-26

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.

Effects of Fabrication Parameters on Interface of Zirconia and Ti-6Al-4V Joints Using Zr55Cu30Al10Ni5 Amorphous Filler

NASA Astrophysics Data System (ADS)

Liu, Yuhua; Hu, Jiandong; Shen, Ping; Guo, Zuoxing; Liu, Huijie

2013-09-01

ZrO2 was brazed to Ti-6Al-4V using a Zr55Cu30Al10Ni5 (at.%) amorphous filler in a high vacuum at 1173-1273 K. The influences of brazing temperature, holding time, and cooling rate on the microstructure and shear strength of the joints were investigated. The interfacial microstructures can be characterized as ZrO2/ZrO2- x + TiO/(Zr,Ti)2(Cu,Ni)/(Zr,Ti)2(Cu,Ni,Al)/acicular Widmanstäten structure/Ti-6Al-4V. With the increase in the brazing temperature, both the thickness of the ZrO2- x + TiO layer and the content of the (Zr,Ti)2(Cu,Ni) phase decreased. However, the acicular Widmanstäten structure gradually increased. With the increase in the holding time, the (Zr,Ti)2(Cu,Ni) phase decreased, and the thickness of the (Zr,Ti)2(Cu,Ni) + (Zr,Ti)2(Cu,Ni,Al) layer decreased. In addition, cracks formed adjacent to the ZrO2 side under rapid cooling. The microstructures produced under various fabrication parameters directly influence the shear strength of the joints. When ZrO2 and Ti-6Al-4V couples were brazed at 1173 K for 10 min and then cooled at a rate of 5 K/min, the maximum shear strength of 95 MPa was obtained.

Oxides for sustainable photovoltaics with earth-abundant materials

NASA Astrophysics Data System (ADS)

Wagner, Alexander; Stahl, Mathieu; Ehrhardt, Nikolai; Fahl, Andreas; Ledig, Johannes; Waag, Andreas; Bakin, Andrey

2014-03-01

Energy conversion technologies are aiming to extremely high power capacities per year. Nontoxicity and abundance of the materials are the key requirements to a sustainable photovoltaic technology. Oxides are among the key materials to reach these goals. We investigate the influence of thin buffer layers on the performance of an ZnO:Al/buffer/Cu2O solar cells. Introduction of a thin ZnO or Al2O3 buffer layer, grown by thermal ALD, between ZnO:Al and Cu2O resulted in 45% increase of the solar cell efficiency. VPE growth of Cu2O employing elemental copper and pure oxygen as precursor materials is presented. The growth is performed on MgO substrates with the (001) orientation. On- and off- oriented substrates have been employed and the growth results are compared. XRD investigations show the growth of the (110) oriented Cu2O for all temperatures, whereas at a high substrate temperature additional (001) Cu2O growth occurs. An increase of the oxygen partial pressure leads to a more pronounced 2D growth mode, whereby pores between the islands still remain. The implementation of off-axis substrates with 3.5° and 5° does not lead to an improvement of the layer quality. The (110) orientation remains predominant, the grain size decreases and the FWHM of the (220) peak increases. From the AFM images it is concluded, that the (110) surface grows with a tilt angle to the substrate surface.

Transient and modulated charge separation at CuInSe2/C60 and CuInSe2/ZnPc hybrid interfaces

NASA Astrophysics Data System (ADS)

von Morzé, Natascha; Dittrich, Thomas; Calvet, Wolfram; Lauermann, Iver; Rusu, Marin

2017-02-01

Spectral dependent charge transfer and exciton dissociation have been investigated at hybrid interfaces between inorganic polycrystalline CuInSe2 (untreated and Na-conditioned) thin films and organic C60 as well as zinc phthalocyanine (ZnPc) layers by transient and modulated surface photovoltage measurements. The stoichiometry and electronic properties of the bare CuInSe2 surface were characterized by photoelectron spectroscopy which revealed a Cu-poor phase with n-type features. After the deposition of the C60 layer, a strong band bending at the CuInSe2 surface was observed. Evidence for dissociation of excitons followed by charge separation was found at the CuInSe2/ZnPc interface. The Cu-poor layer at the CuInSe2 surface was found to be crucial for transient and modulated charge separation at CuInSe2/organic hybrid interfaces.

Magnetic anisotropy and magnetization reversal in Co/Cu multilayers nanowires

NASA Astrophysics Data System (ADS)

Ahmad, Naeem; Chen, J. Y.; Shi, D. W.; Iqbal, Javed; Han, Xiufeng

2012-04-01

The Co/Cu multilayer nanowires fabricated in an array using anodized aluminum oxide (AAO) template by electrodeposition method, have been investigated. It has been observed that the magnetization reversal mode and magnetic anisotropy depend upon the Co and Cu layer thicknesses. Magnetization reversal occurs by curling mode at around Co = 400 nm and Cu = 10 nm, while for Co = 30 nm and Cu = 60 nm, magnetization reversal occurs by nucleation mode. A change of magnetic anisotropy from out of plane to in plane is observed when thickness of Cu layer tCu = 60 nm and that of Co tCo = 30 nm. Magnetic anisotropy is lost when thickness of the Co layer tCo = 400 nm and that of Cu tCu= 10 nm. Magnetic properties have been explained by the competition among shape anisotropy, magnetostatic interactions and magnetocrystalline anisotropy. Magnetic properties can be tuned accordingly depending upon the thickness of the Co and Cu nanodisks.

Theoretical study of magnetic layers of nickel on copper; dead or alive?

NASA Astrophysics Data System (ADS)

Ernst, A.; Lueders, M.; Temmerman, W. M.; Szotek, Z.; van der Laan, G.

2000-07-01

We studied the persistence of magnetism in ultrathin nickel films on copper. Layer-dependent magnetic moments in Ni films on the (001), (110) and (111) surfaces of Cu have been calculated using the Korringa-Kohn-Rostoker Green's function method. The results show that, at temperature T = 0, a single nickel monolayer is ferromagnetic on Cu(001) and Cu(110) but magnetically `dead' on the more closely packed Cu(111) surface. Films of two and more layers of Ni are always ferromagnetic, with the magnetic moment enhanced in the surface layer but strongly reduced in the interface layer. Due to the short screening length, both the effect of the interface and that of the surface are confined to only a few atomic layers.

Novel p-n heterojunction copper phosphide/cuprous oxide photocathode for solar hydrogen production.

PubMed

Chen, Ying-Chu; Chen, Zhong-Bo; Hsu, Yu-Kuei

2018-08-01

A Copper phosphide (Cu 3 P) micro-rod (MR) array, with coverage by an n-Cu 2 O thin layer by electrodeposition as a photocathode, has been directly fabricated on copper foil via simple electro-oxidation and phosphidation for photoelectrochemical (PEC) hydrogen production. The morphology, structure, and composition of the Cu 3 P/Cu 2 O heterostructure are systematically analyzed using a scanning electron microscope (SEM), X-ray diffraction and X-ray photoelectron spectra. The PEC measurements corroborate that the p-Cu 3 P/n-Cu 2 O heterostructural photocathode illustrates efficient charge separation and low charge transfer resistance to achieve the highest photocurrent of 430 μA cm -2 that is greater than other transition metal phosphide materials. In addition, a detailed energy diagram of the p-Cu 3 P/n-Cu 2 O heterostructure was investigated using Mott-Schottky analysis. Our study paves the way to explore phosphide-based materials in a new class for solar energy applications. Copyright © 2018 Elsevier Inc. All rights reserved.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hönes, C., E-mail: christian.hoenes@de.bosch.com; Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux; Hackenberg, J.

2015-03-07

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energymore » for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.« less

A two-dimensional organic–inorganic hybrid compound, poly[(ethylenediamine)tri-μ-oxido-oxidocopper(II)molybdenum(VI)

PubMed Central

Gun, Ozgul; VanDerveer, Don; Emirdag-Eanes, Mehtap

2008-01-01

A new organic–inorganic two-dimensional hybrid compound, [CuMoO4(C2H8N2)], has been hydro­thermally synthesized at 443 K. The unit cell contains layers composed of CuN2O4 octa­hedra and MoO4 tetra­hedra. Corner-sharing MoO4 and CuN2O4 polyhedra form CuMoO4 bimetallic sites that are joined together through O atoms, forming an edge-sharing Cu2Mo2O4 chain along the c axis. The one-dimensional chains are further linked through bridging O atoms that join the Cu and Mo atoms into respective chains along the b axis, thus establishing layers in the bc plane. The ethyl­enediamine ligand is coordinated to the Cu atom through its two N atoms and is oriented perpendicularly to the two-dimensional –Cu—O—Mo– layers. The average distance between adjacent layers, as calculated by consideration of the closest and furthest distances between two layers, is 8.7 Å. The oxidation states of the Mo and Cu atoms of VI and II, respectively, were confirmed by bond-valence sum calculations. PMID:21200997

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

NASA Technical Reports Server (NTRS)

Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

2003-01-01

Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method

PubMed Central

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-01

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe2 absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe2 precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe2 absorber layers. After spraying on Mo/glass substrates, the CuInSe2 thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N2 as atmosphere. When the CuInSe2 thin films were annealed, without extra Se or H2Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe2 absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe2 absorber layers could be controlled as the volume of used dispersed CuInSe2-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe2 absorber layers obtained by the Spray Coating Method. PMID:28788451

H2 gas sensing properties of a ZnO/CuO and ZnO/CuO/Cu2O Heterostructures

NASA Astrophysics Data System (ADS)

Ababii, N.; Postica, V.; Hoppe, M.; Adelung, R.; Lupan, O.; Railean, S.; Pauporté, T.; Viana, B.

2017-03-01

The most important parameters of gas sensors are sensitivity and especially high selectivity to specific chemical species. To improve these parameters we developed sensor structures based on layered semiconducting oxides, namely CuO/Cu2O, CuO:Zn/Cu2O:Zn, NiO/ZnO. In this work, the ZnO/CuxO (where x = 1, 2) bi-layer heterostructure were grown via a simple synthesis from chemical solution (SCS) at relatively low temperatures (< 95 °C), representing a combination of layered n-type and p-type semiconducting oxides which are widely used as sensing material for gas sensors. The main advantages of the developed device structures are given by simplicity of the synthesis and technological cost-efficiency. Structural investigations showed high crystallinity of synthesized layers confirming the presence of zinc oxide nanostructures on the surface of the copper oxide film deposited on glass substrate. Structural changes in morphology of grown nanostructures induced by post-grown thermal annealing were observed by scanning electron microscopy (SEM) investigations, and were studied in detail. The influence of thermal annealing type on the optical properties was also investigated. As an example of practical applications, the ZnO/CuxO bi-layer heterojunctions and ZnO/CuO/Cu2O three-layered structures were integrated into sensor structures and were tested to different types of reducing gases at different operating temperatures (OPT), showing promising results for fabrication of selective gas sensors.

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

NASA Astrophysics Data System (ADS)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Interaction of CuS and sulfur in Li-S battery system

DOE PAGES

Sun, Ke; Su, Dong; Zhang, Qing; ...

2015-10-27

Lithium-Sulfur (Li-S) battery has been a subject of intensive research in recent years due to its potential to provide much higher energy density and lower cost than the current state of the art lithiumion battery technology. In this work, we have investigated Cupric Sulfide (CuS) as a capacitycontributing conductive additive to the sulfur electrode in a Li-S battery. Galvanostatic charge/discharge cycling has been used to compare the performance of both sulfur electrodes and S:CuS hybrid electrodes with various ratios. We found that the conductive CuS additive enhanced the utilization of the sulfur cathode under a 1C rate discharge. However, undermore » a C/10 discharge rate, S:CuS hybrid electrodes exhibited lower sulfur utilization in the first discharge and faster capacity decay in later cycles than a pure sulfur electrode due to the dissolution of CuS. The CuS dissolution is found to be the result of strong interaction between the soluble low order polysulfide Li 2S 3 and CuS. As a result, we identified the presence of conductive copper-containing sulfides at the cycled lithium anode surface, which may degrade the effectiveness of the passivation function of the solid-electrolyte-interphase (SEI) layer, accounting for the poor cycling performance of the S:CuS hybrid cells at low rate.« less

Magnetic behaviour of multisegmented FeCoCu/Cu electrodeposited nanowires

NASA Astrophysics Data System (ADS)

Núñez, A.; Pérez, L.; Abuín, M.; Araujo, J. P.; Proenca, M. P.

2017-04-01

Understanding the magnetic behaviour of multisegmented nanowires (NWs) is a major key for the application of such structures in future devices. In this work, magnetic/non-magnetic arrays of FeCoCu/Cu multilayered NWs electrodeposited in nanoporous alumina templates are studied. Contrarily to most reports on multilayered NWs, the magnetic layer thickness was kept constant (30 nm) and only the non-magnetic layer thickness was changed (0 to 80 nm). This allowed us to tune the interwire and intrawire interactions between the magnetic layers in the NW array creating a three-dimensional (3D) magnetic system without the need to change the template characteristics. Magnetic hysteresis loops, measured with the applied field parallel and perpendicular to the NWs’ long axis, showed the effect of the non-magnetic Cu layer on the overall magnetic properties of the NW arrays. In particular, introducing Cu layers along the magnetic NW axis creates domain wall nucleation sites that facilitate the magnetization reversal of the wires, as seen by the decrease in the parallel coercivity and the reduction of the perpendicular saturation field. By further increasing the Cu layer thickness, the interactions between the magnetic segments, both along the NW axis and of neighbouring NWs, decrease, thus rising again the parallel coercivity and the perpendicular saturation field. This work shows how one can easily tune the parallel and perpendicular magnetic properties of a 3D magnetic layer system by adjusting the non-magnetic layer thickness.

Resistivity scaling due to electron surface scattering in thin metal layers

NASA Astrophysics Data System (ADS)

Zhou, Tianji; Gall, Daniel

2018-04-01

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

Investigation of noble metal substrates and buffer layers for BiSrCaCuO thin films

NASA Astrophysics Data System (ADS)

Matthiesen, M. M.; Rubin, L. M.; Williams, K. E.; Rudman, D. A.

Noble metal buffer layers and substrates for Bi2Sr2CaCu2O8 (BSCCO) films were investigated using bulk ceramic processing and thin-film techniques. Highly oriented, superconducting BSCCO films were fabricated on polycrystalline Ag substrates and on Ag/MgO and Ag/YSZ structures. Such films could not be produced on Au or Pt substrates under any annealing conditions. In addition, superconducting BSCCO films could not be produced on Ag/Al2O3, Ag/SiO2/Si, or Ag/(Haynes 230 alloy) structures using high annealing temperatures (870 C). However, oriented although poorly connected, superconducting BSCCO films were fabricated on Ag/Al2O3 structures by using lower annealing temperatures (820 C). Once lower processing temperatures are optimized, Ag may be usable as a buffer layer for BSCCO films.

Enhancing the stability of copper chromite catalysts for the selective hydrogenation of furfural using ALD overcoating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongbo; Lei, Yu; Kropf, A. Jeremy

2014-08-01

The stability of a gas-phase furfural hydrogenation catalyst (CuCr2O4 center dot CuO) was enhanced by depositing a thin Al2O3 layer using atomic layer deposition (ALD). Based on temperature-programed reduction (TPR) measurements, the reduction temperature of Cu was raised significantly, and the activation energy for furfural reduction was decreased following the ALD treatment. Thinner ALD layers yielded higher furfural hydrogenation activities. X-ray absorption fine structure (XAFS) spectroscopy studies indicated that Cu1+/Cu-0 are the active species for furfural reduction.

Extremely low-outgassing material: 0.2% beryllium copper alloy

NASA Astrophysics Data System (ADS)

Watanabe, Fumio

2004-01-01

Exploration for low-outgassing materials for use in ultrahigh vacuum and extreme high-vacuum systems is one of the most important topics of a vacuum researcher. We have found that a copper alloy containing 0.2% beryllium (0.2% BeCu) can attain an extremely low hydrogen outgassing rate of 10-14 Pa (H2) m/s order. Almost the entire surface of 0.2% BeCu is dominated by a BeO layer, after a 400 °C×72 h prebakeout treatment in an ultrahigh vacuum. This layer functions as a barrier to the processes of oxidization and permeation of hydrogen. In addition, this layer resists carbon contamination. Temperature-programmed desorption spectra show only a single peak for water at 150 °C and small quantities of any other desorption gases. Therefore, an in situ bakeout process in which the temperature simply ramps up to 150 °C and immediately ramps back down is enough for degassing; it does not require an ordinary sustained-temperature bakeout. Using an outgassing sample consisting of 0.2% BeCu disks housed in a 0.2% BeCu nipple chamber, a lowest outgassing rate of the 5.6×10-14 Pa (H2) m/s was measured by the pressure-rise method after pump cutoff. The pressure-rise versus time curve was completely nonlinear. It rises over time to a constant slope of 1/2 in a log-log plot, due to hydrogen diffusion from the bulk, but this requires over a week at room temperature. The hydrogen outgassing from the 0.2% BeCu bulk is completely dominated by a diffusion-limited mechanism. This article will describe why we obtain such low-outgassing rates with 0.2% BeCu. It is based on the observed surface changes with prebakeout treatment seen by x-ray photoelectron spectroscopy, and the improvement of hydrogen outgassing measurements by the pressure-rise method. A comparison is made to ordinary stainless steel. In addition, the concept of an outgassing reduction method will be discussed from a review of the published ultralow-outgassing data and reduction methods. .

Electrochemical, Structural and Magnetic Analysis of Electrodeposited CoCu/Cu Multilayers: Influence of Cu Layer Deposition Potential

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Kockar, Hakan; Kuru, Hilal; Alper, Mürsel; ÜnlÜ, C. Gökhan

2018-03-01

The electrochemical, structural and magnetic properties of CoCu/Cu multilayers electrodeposited at different cathode potentials were investigated from a single bath. The Cu layer deposition potentials were selected as - 0.3, V - 0.4 V, and - 0.5 V with respect to saturated calomel electrode (SCE) while the Co layer deposition potential was constant at - 1.5 V versus SCE. For the electrochemical analysis, the current-time transients were obtained. The amount of noble non-magnetic (Cu) metal materials decreased with the increase of deposition potentials due to anomalous codeposition. Further, current-time transient curves for the Co layer deposition and capacitance were calculated. In the structural analysis, the multilayers were found to be polycrystalline with both Co and Cu layers adopting the face-centered cubic structure. The (111) peak shifts towards higher angle with the increase of the deposition potentials. Also, the lattice parameters of the multilayers decrease from 0.3669 nm to 0.3610 nm with the increase of the deposition potentials from - 0.3 V to - 0.5 V, which corresponds to the bulk values of Cu and Co, respectively. The electrochemical and structural results demonstrate that the amount of Co atoms increased and the Cu atoms decreased in the layers with the increase of deposition potentials due to anomalous codeposition. For magnetic measurements, the saturation magnetizations, M_s obtained from the magnetic curves of the multilayers were obtained as 212 kA/m, 276 kA/m, and 366 kA/m with - 0.3 V, - 0.4 V, and - 0.5 V versus SCE, respectively. It is seen that the M_s values increased with the increase of the deposition potentials confirming the increase of the Co atoms and decrease of the Cu amount. The results of electrochemical and structural analysis show that the deposition potentials of non-magnetic layers plays important role on the amount of magnetic and non-magnetic materials in the layers and thus on the magnetic properties of the multilayers.

In situ study of heavy ion irradiation response of immiscible Cu/Fe multilayers

DOE PAGES

Chen, Youxing; Li, Nan; Bufford, Daniel Charles; ...

2016-04-09

By providing active defect sinks that capture and annihilate radiation induced defect clusters immiscible metallic multilayers with incoherent interfaces can effectively reduce defect density in ion irradiated metals. Although it is anticipated that defect density within the layers should vary as a function of distance to the layer interface, there is, to date, little in situ TEM evidence to validate this hypothesis. In our study monolithic Cu films and Cu/Fe multilayers with individual layer thickness, h, of 100 and 5 nm were subjected to in situ Cu ion irradiation at room temperature to nominally 1 displacement-per-atom inside a transmission electronmore » microscope. Rapid formation and propagation of defect clusters were observed in monolithic Cu, whereas fewer defects with smaller dimensions were generated in Cu/Fe multilayers with smaller h. Moreover, in situ video shows that the cumulative defect density in Cu/Fe 100 nm multilayers indeed varies, as a function of distance to the layer interfaces, supporting a long postulated hypothesis.« less

Mechanical properties of Cr-Cu coatings produced by electroplating

NASA Astrophysics Data System (ADS)

Riyadi, Tri Widodo Besar; Sarjito, Masyrukan, Riswan, Ricky Ary

2017-06-01

Hard chromium coatings has long been considered as the most used electrodeposited coating in several industrial applications such as in petrochemistry, oil and gas industries. When hard coatings used in fastener components, the sliding contact during fastening operation produces high tensile stresses on the surface which can generate microcracks. For component used in high oxidation and corrosion environment, deep cracks cannot be tolerated. In this work, a laminated structure of Cr-Cu coating was prepared using electroplating on carbon steel substrates. Two baths of chrome and copper electrolyte solutions were prepared to deposit Cr as the first layer and Cu as the second layer. The effect of current voltages on the thickness, hardness and specific wear rate of the Cu layer was investigated. The results show that an increase of the current voltages increased the thickness and hardness of the Cu layer, but reduced the specific wear rate. This study showed that the use of Cu can be a potential candidate as a laminated structure Cr-Cu for chromium plating.

Effect of Embedding Cu-Graphene Hybrid Powder into 2-Phase In-Cu Solders on Its Suitability as Metallic Thermal Interface Material

NASA Astrophysics Data System (ADS)

Sharma, Deepak; Jain, Aman; Somaiah, Nalla; Narayanan, P. Ramesh; Kumar, Praveen

2018-05-01

The effect of embedding Cu-graphene hybrid powder, namely "graphene nano-sheet Cu" (GNS-Cu) powder, into In-40 vol.% Cu solder alloy on the electrical and mechanical properties of In-Cu solder is investigated. GNS-Cu hybrid powders were prepared by mixing reduced graphene oxide powders and CuSO4·5H2O, followed by reduction of the mixture with hydrazine. Subsequently, In-Cu solders with GNS-Cu powders were prepared using a 2-step process, comprising liquid phase sintering (LPS) of In and Cu powders followed by accumulative roll bonding (ARB). During ARB, the GNS-Cu powders were embedded as distinct layers into In-Cu composite solders. Electrical conductivity of the GNS-Cu embedded solders increased by > 20% as compared to pure In-Cu solders processed through the same combination of LPS-ARB steps. The yield strength of In-Cu solder increased by only 10% with the addition of GNS-Cu powders and thus retained the moderate strength often associated with pure In-Cu composite solders. Moreover, the thermal conductivity of GNS-Cu-embedded solders was estimated theoretically to increase by > 60%. These promising findings suggest that GNS-Cu-embedded In-Cu solders can be suitable for next-generation metallic thermal interface material and package-level interconnect applications.

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only controlmore » samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and η = 13.0%.« less

Enormous excitonic effects in bulk, mono- and bi- layers of cuprous halides using many-body perturbation technique

NASA Astrophysics Data System (ADS)

Azhikodan, Dilna; Nautiyal, Tashi

2017-10-01

Cuprous halides (CuX with X = Cl, Br, I), intensely studied about four decades ago by experimentalists for excitons, are again drawing attention of researchers recently. Potential of cuprous halide systems for device applications has not yet been fully explored. We go beyond the one-particle picture to capture the two-particle physics (electron-hole interaction to form excitons). We have deployed the full tool kit of many-body perturbation technique, GW approximation + Bethe Salpeter equation, to unfurl the rich excitonic physics of the bulk as well as layers of CuX. The negative spin-orbit contribution at the valence band top in CuCl, compared to CuBr and CuI, is in good agreement with experiments. We note that CuX have exceptionally strong excitons, defying the linear fit (between the excitonic binding energy and band gap) encompassing many semiconductors. The mono- and bi- layers of cuprous halides are predicted to be rich in excitons, with exceptionally large binding energies and the resonance energies in UV/visible region. Hence this work projects CuX layers as good candidates for optoelectronic applications. With advancement of technology, we look forward to experimental realization of CuX layers and harnessing of their rich excitonic potential.

Sono-incorporation of CuO nanoparticles on the surface and into the mesoporous hexatitanate layers: Enhanced Fenton-like activity in degradation of orange-G at its neutral pH

NASA Astrophysics Data System (ADS)

Sehati, S.; Entezari, M. H.

2017-03-01

In this work, for the first time, CuO/Ti6O13 mesoporous nanocomposite was synthesized by direct intercalation of CuO nanoparticles into hexatitanate layers in the presence of ultrasound. In fact mesoporous potassium hexatitanate with high pore size (44.94 nm) was used as a support. CuO nanoparticles were grown into the titanate pores which caused formation of ultra small CuO with uniform size and high surface area. In fact, titanate is considered as a substrate for better dispersion and nucleation of the CuO nanoparticles which prevented the agglomeration and overgrowth of guest molecules. The prepared sample was characterized by XRD, FE-SEM, TEM, UV-vis spectra, N2 adsorption-desorption, Raman spectra and FT-IR techniques. The product was used as a heterogeneous Fenton-like catalyst for the degradation of Orang G (OG). The effect of important parameters, including pH, H2O2 addition rate and catalyst loading on the decolorization of OG were investigated. Based on the results, CuO/Ti6O13 catalyst exhibited high catalytic activity for OG degradation in aqueous solution at neutral pH of the dye. Moreover, breaking of H2O2 during the catalytic reaction was monitored by spectroscopic method. The results confirmed the decomposition of H2O2 to produce rad OH which is the main active species for the degradation of OG.

High-temperature superconducting superconductor/normal metal/superconducting devices

NASA Technical Reports Server (NTRS)

Foote, M. C.; Hunt, B. D.; Bajuk, L. J.

1991-01-01

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Effect of protein adsorption on the corrosion behavior of 70Cu-30Ni alloy in artificial seawater.

PubMed

Torres Bautista, Blanca E; Carvalho, Maria L; Seyeux, Antoine; Zanna, Sandrine; Cristiani, Pierangela; Tribollet, Bernard; Marcus, Philippe; Frateur, Isabelle

2014-06-01

Copper alloys often used in cooling circuits of industrial plants can be affected by biocorrosion induced by biofilm formation. The objective of this work was to study the influence of protein adsorption, which is the first step in biofilm formation, on the electrochemical behavior of 70Cu-30Ni (wt.%) alloy in static artificial seawater and on the chemical composition of oxide layers. For that purpose, electrochemical measurements performed after 1h of immersion were combined to surface analyses. A model is proposed to analyze impedance data. In the presence of bovine serum albumin (BSA, model protein), the anodic charge transfer resistance deduced from EIS data at Ecorr is slightly higher, corresponding to lower corrosion current. Without BSA, two oxidized layers are shown by XPS and ToF-SIMS: an outer layer mainly composed of copper oxide (Cu2O redeposited layer) and an inner layer mainly composed of oxidized nickel, with a global thickness of ~30nm. The presence of BSA leads to a mixed oxide layer (CuO, Cu2O, Ni(OH)2) with a lower thickness (~10nm). Thus, the protein induces a decrease of the dissolution rate at Ecorr and hence a decrease of the amount of redeposited Cu2O and of the oxide layer thickness. © 2013.

Remote catalyzation for direct formation of graphene layers on oxides.

PubMed

Teng, Po-Yuan; Lu, Chun-Chieh; Akiyama-Hasegawa, Kotone; Lin, Yung-Chang; Yeh, Chao-Hui; Suenaga, Kazu; Chiu, Po-Wen

2012-03-14

Direct deposition of high-quality graphene layers on insulating substrates such as SiO(2) paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO(2) with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth. © 2012 American Chemical Society

Highly monodisperse multiple twinned AuCu-Pt trimetallic nanoparticles with high index surfaces.

PubMed

Khanal, Subarna; Bhattarai, Nabraj; McMaster, David; Bahena, Daniel; Velazquez-Salazar, J Jesus; Jose-Yacaman, Miguel

2014-08-14

Trimetallic nanoparticles possess different properties than their mono- and bi-metallic counterparts, opening a wide range of possibilities for diverse potential applications with the notion to study possible morphology, atomic ordering, reduce precious metal consumption and many others. In this paper, we present a comprehensive experimental study on AuCu-Pt trimetallic nanoparticles with an average diameter of 15 ± 1.0 nm, synthesized in a one-pot synthesis method and characterized by the Cs-corrected scanning transmission electron microscopy technique that allowed us to probe the structure at the atomic level resolution. A new way to control the nanoparticle morphology by the presence of third metal (Pt) is also discussed by the overgrowth of Pt on the as prepared AuCu core by Frank-van der Merwe (FM) layer-by-layer and Stranski-Krastanov (SK) island-on-wetting-layer growth modes. With the application of this research, we are now a step closer to produce optimum catalysts in which the active phase forms only surface monolayers. In addition, the nanoalloy exhibits high index facet surfaces with {211} and {321} families that are highly open-structure surfaces and are interesting for the catalytic applications.

Highly Monodisperse Multiple Twinned AuCu/Pt Trimetallic Nanoparticles with High Index Surfaces

PubMed Central

Khanal, Subarna; Bhattarai, Nabraj; McMaster, David; Bahena, Daniel; Velazquez-Salazar, J. Jesus

2014-01-01

Trimetallic nanoparticles present different properties than their mono- and bi-metallic counterparts, opening a wide range of possibilities for diverse potential applications with the notion to study possible morphology, atomic ordering, reduce precious metal consumption and many others. In this paper, we are presenting a comprehensive experimental study on AuCu/Pt trimetallic nanoparticles with an average diameter 15 ± 1.0 nm, synthesized in one-pot synthesis method and characterized by Cs-corrected scanning transmission electron microscopy technique that allowed us to probe the structure at the atomic level resolution. A new way to control the nanoparticle morphology by the presence of third metal (Pt) is also discussed by the overgrowth of Pt on as prepared AuCu core by Frank–van der Merwe (FM) layer-by-layer and Stranski–Krastanov (SK) island-on-wetting-layer growth modes. With the application of this research, we are now a step closer to produce optimum catalysts in which the active phase forms only surface monolayers. In addition, the nanoalloy presents high index facet surfaces with {211} and {321} families, that are highly open-structure surfaces and are interesting for the catalytic applications. PMID:24975090

Copper and nickel hexacyanoferrate nanostructures with graphene-coated stainless steel sheets for electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Wu, Mao-Sung; Lyu, Li-Jyun; Syu, Jhih-Hao

2015-11-01

Copper and nickel hexacyanoferrate (CuHCF and NiHCF) nanostructures featuring three-dimensional open-framework tunnels are prepared using a solution-based coprecipitation process. CuHCF shows superior supercapacitive behavior than the NiHCF, due to the presence of numerous macropores in CuHCF particles for facilitating the transport of electrolyte. Both CuHCF and NiHCF electrodes with stainless steel (SS) substrate tend to lose their electroactivity towards intercalation/deintercalation of hydrated potassium ions owing to the partial corrosion of SS. Formation of a protective and conductive carbon layer in between SS and CuHCF (NiHCF) film is of paramount importance for improving the irreversible loss of electroactivity. Thin and compact graphene (GN) layer without observable holes in its normal plane is the most effective way to suppress the corrosion of SS compared with porous carbon nanotube and activated carbon layers. Specific capacitance of CuHCF electrode with GN layer (CuHCF/GN/SS) reaches 570 F g-1, which is even better than that of CuHCF with Pt substrate (500 F g-1) at 1 A g-1. The CuHCF/GN/SS exhibits high stability with 96% capacitance retention over 1000 cycles, greater than the CuHCF with Pt (75%).

Organic heterojunctions: Contact-induced molecular reorientation, interface states, and charge re-distribution

PubMed Central

Opitz, Andreas; Wilke, Andreas; Amsalem, Patrick; Oehzelt, Martin; Blum, Ralf-Peter; Rabe, Jürgen P.; Mizokuro, Toshiko; Hörmann, Ulrich; Hansson, Rickard; Moons, Ellen; Koch, Norbert

2016-01-01

We reveal the rather complex interplay of contact-induced re-orientation and interfacial electronic structure – in the presence of Fermi-level pinning – at prototypical molecular heterojunctions comprising copper phthalocyanine (H16CuPc) and its perfluorinated analogue (F16CuPc), by employing ultraviolet photoelectron and X-ray absorption spectroscopy. For both layer sequences, we find that Fermi-level (EF) pinning of the first layer on the conductive polymer substrate modifies the work function encountered by the second layer such that it also becomes EF-pinned, however, at the interface towards the first molecular layer. This results in a charge transfer accompanied by a sheet charge density at the organic/organic interface. While molecules in the bulk of the films exhibit upright orientation, contact formation at the heterojunction results in an interfacial bilayer with lying and co-facial orientation. This interfacial layer is not EF-pinned, but provides for an additional density of states at the interface that is not present in the bulk. With reliable knowledge of the organic heterojunction’s electronic structure we can explain the poor performance of these in photovoltaic cells as well as their valuable function as charge generation layer in electronic devices. PMID:26887445

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Alper, Mürsel; Kockar, Hakan

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current-time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of -0.3 and -1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avila, J. R.; Peters, A. W.; Li, Zhanyong

2017-01-01

To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).

Diffusion induced atomic islands on the surface of Ni/Cu nanolayers

NASA Astrophysics Data System (ADS)

Takáts, Viktor; Csik, Attila; Hakl, József; Vad, Kálmán

2018-05-01

Surface islands formed by grain-boundary diffusion has been studied in Ni/Cu nanolayers by in-situ low energy ion scattering spectroscopy, X-ray photoelectron spectroscopy, scanning probe microscopy and ex-situ depth profiling based on ion sputtering. In this paper a new experimental approach of measurement of grain-boundary diffusion coefficients is presented. Appearing time of copper atoms diffused through a few nanometer thick nickel layer has been detected by low energy ion scattering spectroscopy with high sensitivity. The grain-boundary diffusion coefficient can be directly calculated from this appearing time without using segregation factors in calculations. The temperature range of 423-463 K insures the pure C-type diffusion kinetic regime. The most important result is that surface coverage of Ni layer by Cu atoms reaches a maximum during annealing and stays constant if the annealing procedure is continued. Scanning probe microscopy measurements show a Volmer-Weber type layer growth of Cu layer on the Ni surface in the form of Cu atomic islands. Depth distribution of Cu in Ni layer has been determined by depth profile analysis.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Development of Cu Clad Cu-Zr Based Metallic Glass and Its Solderability

NASA Astrophysics Data System (ADS)

Terajima, Takeshi; Kimura, Hisamichi; Inoue, Akihisa

Soldering is a candidate technique for joining metallic glasses. It can be processed far below the crystallization temperatures of the various metallic glasses so that there is no possibility of crystallization. However, wettability of Cu-Zr based metallic glass by Pb free solder is poor because a strong surface oxide film interferes direct contact between them. To overcome the problem, Cu thin film clad metallic glass was developed. It was preliminary produced by casting a melt of Cu36Zr48Al8Ag8 pre-alloy into Cu mold cavity, inside which Cu thin film with 2 mm in thickness was set on the wall. Cu36Zr48Al8Ag8 metallic glass, whose surface Cu thin film was welded to, was successfully produced. From the microstructure analyses, it was found that reaction layer was formed at the interface between Cu and Cu36Zr48Al8Ag8 metallic glass, however, there was no oxide in the Cu clad layer. Solderability to the metallic glass was drastically increased. The Cu clad layer played an important role to prevent the formation of surface oxide film and consequently improved the solderability.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433; Li, Yufan

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; Li, Yufan; Qu, D.

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

The Melting Characteristics and Interfacial Reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu Joints During Reflow Soldering

NASA Astrophysics Data System (ADS)

Huang, J. Q.; Zhou, M. B.; Zhang, X. P.

2017-03-01

In this work, the melting characteristics and interfacial reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu (Sn/SAC305-paste/Cu) structure joints were studied using differential scanning calorimetry, in order to gain a deeper and broader understanding of the interfacial behavior and metallurgical combination among the substrate (under-bump metallization), solder ball and solder paste in a board-level ball grid array (BGA) assembly process, which is often seen as a mixed assembly using solder balls and solder pastes. Results show that at the SAC305 melting temperature of 217°C, neither the SAC305-paste nor the Sn-ball coalesce, while an interfacial reaction occurs between the SAC305-paste and Cu. A slight increase in reflow temperature (from 217°C to 218°C) results in the coalescence of the SAC305-paste with the Sn-ball. The Sn-ball exhibits premelting behavior at reflow temperatures below its melting temperature, and the premelting direction is from the bottom to the top of the Sn-ball. Remarkably, at 227°C, which is nearly 5°C lower than the melting point of pure Sn, the Sn-ball melts completely, resulting from two eutectic reactions, i.e., the reaction between Sn and Cu and that between Sn and Ag. Furthermore, a large amount of bulk Cu6Sn5 phase forms in the solder due to the quick dissolution of Cu substrate when the reflow temperature is increased to 245°C. In addition, the growth of the interfacial Cu6Sn5 layer at the SAC305-paste/Cu interface is controlled mainly by grain boundary diffusion, while the growth of the interfacial Cu3Sn layer is controlled mainly by bulk diffusion.

Single domain YBa2Cu3Oy thick films on metallic substrates

NASA Astrophysics Data System (ADS)

Reddy, E. S.; Noudem, J. G.; Goodilin, E. A.; Tarka, M.; Schmitz, G. J.

2003-03-01

The fabrication of single domain YBa2Cu3Oy (123) thick films (10-100 mum) on metallic substrates is reported. The process involves the formation of the 123 phase by a peritectic reaction between an air-brushed dense Y2BaCuO5 (211) layer on a Ag12Pd substrate and infiltrated liquid phases containing barium cuprates and copper oxides. Single domain growth is achieved by seeding the green films with a c-axis oriented NdBa2Cu3Oy crystal prior to processing. The maximum processing temperatures are lowered to 970 °C by modifying the characteristics of the liquid phases meant for infiltration by addition of Ag powder. The fabrication technique, processing conditions for single domain growth and the resulting microstructures are discussed.

Corrosion resistance of monolayer hexagonal boron nitride on copper

PubMed Central

Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.

2017-01-01

Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating. PMID:28191822

Effect of Mn Nanoparticles on Interfacial Intermetallic Compound Growth in Low-Ag Sn-0.3Ag-0.7Cu- xMn Solder Joints

NASA Astrophysics Data System (ADS)

Tang, Y.; Luo, S. M.; Li, G. Y.; Yang, Z.; Chen, R.; Han, Y.; Hou, C. J.

2018-02-01

Interfacial intermetallic compound (IMC) growth between Cu substrates and low-Ag Sn-0.3Ag-0.7Cu- xMn ( x = 0 wt.%, 0.02 wt.%, 0.05 wt.%, 0.1 wt.%, and 0.15 wt.%) (SAC0307- xMn) solders was investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was employed to observe the microstructural evolution of the solder joints and measure the IMC layer thickness. The IMC phases were identified by energy-dispersive x-ray spectroscopy and x-ray diffraction. The results showed that a Cu6Sn5 IMC layer formed in the as-soldered solder joints, while a duplex structure consisting of a Cu6Sn5 IMC layer near the solder matrix and a Cu3Sn IMC layer was observed after isothermal aging. A considerable drop in the IMC layer thickness was observed when 0.1 wt.% Mn nanoparticles were added. Beyond this amount, the thickness of the IMC layer only slightly increases. Adding Mn nanoparticles can increase the activation energy and thus reduce the interdiffusion rates of the Sn and Cu atoms, which suppresses excessive IMC growth. The solder joint containing 0.1 wt.% Mn nanoparticles has the highest activation energy. SEM images revealed that the number of small particles precipitated in the channels between the Cu6Sn5 IMC layers increases with an increasing proportion of Mn nanoparticles. Based on the microstructural evolution of the solder joints, this study revealed that grain boundary pinning is one of the most important mechanisms for IMC growth inhibition when Mn nanoparticles are added.

A 3D complex containing novel 2D Cu{sup II}-azido layers: Structure, magnetic properties and effects of 'Non-innocent' reagent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Xue-Miao; Guo, Qian; Zhao, Jiong-Peng, E-mail: horryzhao@yahoo.com

A novel copper-azido coordination polymer, [Cu{sub 2}(N{sub 3}){sub 3}(L)]{sub n} (1, HL=pyrazine-2-carboxylic acid), has been synthesized by hydrothermal reaction with 'Non-innocent' reagent in the aqueous solution. In the reaction system, Cu{sup II} ions are avoided to reduce to Cu{sup I} ions due to the existence of Nd{sup III}. It is found that the complex is a 3D structure based on two double EO azido bridged trimmers and octahedron Cu{sup II} ions, in which the azide ligands take on EO and {mu}{sub 1,1,3} mode to form Cu{sup II}-azido 2D layers, furthermore L ligands pillar 2D layers into an infinite 3D frameworkmore » with the Schlaefli symbol of {l_brace}4;6{sup 2}{r_brace}4{l_brace}4{sup 2};6{sup 12};8{sup 10};10{sup 4}{r_brace}{l_brace}4{sup 2};6{sup 4}{r_brace}. Magnetic studies revealed that the interactions between the Cu{sup II} ions in the trimmer are ferromagnetic for the Cu-N-Cu angle nearly 98 Degree-Sign , while the interactions between the trimmer and octahedron Cu{sup II} ion are antiferromgantic and result in an antiferromagnetic state. - Graphical abstract: A 3D complex containing novel 2D Cu{sup II}-azido layers, [Cu{sub 2}(N{sub 3}){sub 3}(L)]{sub n} (HL=pyrazine-2-carboxylic acid), was synthesized by hydrothermal reaction and exhibit interesting structure and magnetic properties. Highlights: Black-Right-Pointing-Pointer 'Non-innocent' reagents plays a key role in the process of formation of this complex. Black-Right-Pointing-Pointer 2D layer is formed only by Cu{sup II} ions and azido ligands. Black-Right-Pointing-Pointer Pyrazine-2-carboxylate ligands reinforce 2D layers and pillar them into an infinite 3D framework. Black-Right-Pointing-Pointer Magnetic study indicates that alternating FM-AF coupling exists in the complex.« less

Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Wells, B. O.; Shen, Z.-X.; Dessau, D. S.; Lindau, I.; Spicer, W. E.; Mitzi, D. B.; Kapitulnik, A.

1990-03-01

Photoemission results from Al and Rb interfaces with single crystals of Bi2Sr2CaCu2O8 high-temperature superconductors are reported. The Al and Rb adsorbates are found to react quite differently with the Bi2Sr2CaCu2O8 substrate. While adatoms of Rb significantly affect only the Bi and O atoms in the top atomic layer, the Al adsorbate profoundly disrupts the bonding character of the whole Bi2Sr2CaCu2O8 material. For Al, the Bi and Cu states are strongly reduced, and the Sr and O states show evidence of oxidized components. In addition, Al causes a strong out-diffusion of oxygen from the bulk. The differences in the reactivity of Al and Rb are discussed in terms of the different mobility of the two atoms.

A new Cu(GeNx) alloy film for industrial applications

NASA Astrophysics Data System (ADS)

Lin, Chon-Hsin

2014-11-01

In this study, a copper alloy [Cu(GeNx)] film is developed for industrial applications by cosputtering Cu and Ge targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the alloy film shows good thermal stability and adhesion to the substrate with no noticeable interactions between the film and the substrate after annealing at 720 °C for 1 h. The new Cu(GeNx) alloy film also renders adequate wetting for solders, shows good solderability, and has a dissolution rate lower than pure Cu by at least one order of magnitude, in addition to having a comparable consumption rate to Ni. The alloy film seems suitable for industrial applications in, e.g., barrierless Si metallization, interconnect manufacture and, the replacement of the wetting and diffusion layers for flip-chip solder joints in conventional metallurgy.

Ferromagnetic signal in nanosized Ag particles.

PubMed

Jo, Younghun; Jung, Myung-Hwa; Kyum, Myung-Chul; Lee, Sung-Ik

2007-11-01

A new technique using an inductively coupled plasma reactor equipped with a liquid-nitrogen cooling system was developed to prepare Ag nanoparticles. The magnetic signal from these Ag particles with diameters of 4 nm showed, surprisingly, a signal with combined ferromagnetic and diamagnetic components, in contrast to the signal with only one diamagnetic component from bulk Ag. The same technique was used to prepare the Ag/Cu nanoparticles, which are Ag nanoparticles coated with a Cu layer. Compared to the Ag nanoparticles, these showed a greatly enhanced superparamagnetic signal in addition to the same value of the ferromagnetism. The comparison between the Ag and the Ag/Cu nanoparticles indicated that the ferromagnetic components are a common feature of Ag nanoparticles while the greatly enhanced paramagnetic component of Ag/Cu, which dominates over the background diamagnetic component from the Ag core, is from the outer Cu shell.

Bulk Fermi surface and electronic properties of Cu0.07Bi2Se3

NASA Astrophysics Data System (ADS)

Martin, C.; Craciun, V.; Miller, K. H.; Uzakbaiuly, B.; Buvaev, S.; Berger, H.; Hebard, A. F.; Tanner, D. B.

2013-05-01

The electronic properties of Cu0.07Bi2Se3 have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy kFc/kFab≈ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi2Se3, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi2Se3. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by x-ray diffraction measurements, where a significant increase of microstrain was found in Cu0.07Bi2Se3, compared to Bi2Se3.

Crystal structure and magnetism of layered perovskites compound EuBaCuFeO5

NASA Astrophysics Data System (ADS)

Lal, Surender; Mukherjee, K.; Yadav, C. S.

2018-04-01

Layered perovskite compounds have interesting multiferroic properties.YBaCuFeO5 is one of the layered perovskite compounds which have magnetic and dielectric transition above 200 K. The multiferroic properties can be tuned with the replacement of Y with some other rare earth ions. In this manuscript, structural and magnetic properties of layered perovskite compound EuBaCuFeO5 have been investigated. This compound crystallizes in the tetragonal structure with P4mm space group and is iso-structural with YBaCuFeO5. The magnetic transition has been found to shift to 120 K as compared to YBaCuFeO5 which has the transition at 200 K. This shift in the magnetic transition has been ascribed to the decrease in the chemical pressure that relaxes the magnetic moments.

Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Reade, R. P.; Mao, X. L.; Russo, R. E.

1991-08-01

The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001)-oriented YSZ intermediate layers and have Tc (R = 0) = 86.0 K and Jc about 3000 A/sq cm at 77 K.

Optimization of X-ray Absorbers for TES Microcalorimeters

NASA Technical Reports Server (NTRS)

Iyomoto, Naoko; Sadleir, John E.; Figueroa-Feliciano, Enectali; Saab, Tarek; Bandler, Simon; Kilbourne, Caroline; Chervenak, James; Talley, Dorothy; Finkbeiner, Fred; Brekosky, Regis

2004-01-01

We have investigated the thermal, electrical, and structural properties of Bi and BiCu films that are being developed as X-ray absorbers for transition-edge sensor (TES) microcalorimeter arrays for imaging X-ray spectroscopy. Bi could be an ideal material for an X-ray absorber due to its high X-ray stopping power and low heat capacity, but it has a low thermal conductivity, which can result in position dependence of the pulses in the absorber. In order to improve the thermal conductivity, we added Cu layers in between the Bi layers. We measured electrical and thermal conductivities of the films around 0.1 K(sub 1) the operating temperature of the TES calorimeter, to examine the films and to determine the optimal thickness of the Cu layer. From the electrical conductivity measurements, we found that the Cu is more resistive on the Bi than on a Si substrate. Together with an SEM picture of the Bi surface, we concluded that the rough surface of the Bi film makes the Cu layer resistive when the Cu layer is not thick enough t o fill in the roughness. From the thermal conductivity measurements, we determined the thermal diffusion constant to be 2 x l0(exp 3) micrometers squared per microsecond in a film that consists of 2.25 micrometers of Bi and 0.1 micrometers of Cu. We measured the position dependence in the film and found that its thermal diffusion constant is too low to get good energy resolution, because of the resistive Cu layer and/or possibly a very high heat capacity of our Bi films. We show plans to improve the thermal diffusion constant in our BiCu absorbers.

Wsbnd Cu functionally graded material: Low temperature fabrication and mechanical characterization

NASA Astrophysics Data System (ADS)

Yusefi, Ali; Parvin, Nader; Mohammadi, Hossein

2018-04-01

In this study, we fabricated and characterized a Wsbnd Cu functionally graded material (FGM) with 11 layers, including a pure copper layer. Samples were prepared by mixing a mechanically alloyed Nisbnd Mnsbnd Cu powder with W and Cu powders, stacking the powders, pressing the stacked layers, and finally sintering at 1000 °C. The utilization of a Nisbnd Mnsbnd Cu system may reduce the cost but without losing the good sintering behavior and physical and mechanical properties. The composition of the material was analyzed based on scanning electron microscopy images and by energy dispersive X-ray spectroscopy mapping, which indicated that in the presence of Ni and Mn, the Cu atoms could diffuse into the W particles. All of the layers had a very high relative density, thereby indicating their densification and excellent sintering behavior. We also found that the porosity values in the Cu phase remained unchanged at approximately 2.39% across the FGM. Mechanical measurements showed that the hardness (72%), modulus of elasticity (61%), and ultimate tensile strength (58%) increased with the W content across the Wsbnd Cu FGM, whereas the fracture toughness (KIC) varied in the opposite manner (minimum of 4.52 MPa/m0.5).

Electrochemical fluorination of La(2)CuO(4): a mild "chimie douce" route to superconducting oxyfluoride materials.

PubMed

Delville, M H; Barbut, D; Wattiaux, A; Bassat, J M; Ménétrier, M; Labrugère, C; Grenier, J C; Etourneau, J

2009-08-17

The fluorination of La(2)CuO(4) was achieved for the first time under normal conditions of pressure and temperature (1 MPa and 298 K) via electrochemical insertion in organic fluorinated electrolytes and led to lanthanum oxyfluorides of general formula La(2)CuO(4)F(x). Analyses showed that, underneath a very thin layer of LaF(3) (a few atomic layers), fluorine is effectively inserted in the material's structure. The fluorination strongly modifies the lanthanum environment, whereas very little modification is observed on copper, suggesting an insertion in the La(2)O(2) blocks of the structure. In all cases, fluorine insertion breaks the translation symmetry and introduces a long-distance disorder, as shown by electron spin resonance. These results highlight the efficiency of electrochemistry as a new "chimie douce" type fluorination technique for solid-state materials. Performed at room temperature, it additionally does not require any specific experimental care. The choice of the electrolytic medium is crucial with regard to the fluorine insertion rate as well as the material deterioration. Successful application of this technique to the well-known La(2)CuO(4) material provides a basis for further syntheses from other oxides.

Enhanced Stability of Pt-Cu Single-Atom Alloy Catalysts: In Situ Characterization of the Pt/Cu(111) Surface in an Ambient Pressure of CO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simonovis, Juan Pablo; Hunt, Adrian; Palomino, Robert M.

The interaction between a catalyst and reactants often induce changes in the surface structure and composition of the catalyst, which, in turn, affect its reactivity. Therefore, it is important to study such changes using in situ techniques under well-controlled conditions. We have used ambient pressure X-ray photoelectron spectroscopy (AP-XPS) to study the surface stability of a Pt/Cu(111) single atom alloy (SAA) in an ambient pressure of CO. By directly probing the Pt atoms, we found that CO causes a slight surface segregation of Pt atoms at room temperature. In addition, while the Pt/Cu(111) surface demonstrates poor thermal stability in UHV,more » where surface Pt starts to diffuse to the subsurface layer above 400 K, the presence of adsorbed CO enhances the thermal stability of surface Pt atoms. Furthermore, we also found that temperatures above 450 K cause a restructuring of the subsurface layer, which consequently strengthens the CO binding to the surface Pt sites, likely due to the presence of neighboring subsurface Pt atoms.« less

Enhanced Stability of Pt-Cu Single-Atom Alloy Catalysts: In Situ Characterization of the Pt/Cu(111) Surface in an Ambient Pressure of CO

DOE PAGES

Simonovis, Juan Pablo; Hunt, Adrian; Palomino, Robert M.; ...

2018-02-05

The interaction between a catalyst and reactants often induce changes in the surface structure and composition of the catalyst, which, in turn, affect its reactivity. Therefore, it is important to study such changes using in situ techniques under well-controlled conditions. We have used ambient pressure X-ray photoelectron spectroscopy (AP-XPS) to study the surface stability of a Pt/Cu(111) single atom alloy (SAA) in an ambient pressure of CO. By directly probing the Pt atoms, we found that CO causes a slight surface segregation of Pt atoms at room temperature. In addition, while the Pt/Cu(111) surface demonstrates poor thermal stability in UHV,more » where surface Pt starts to diffuse to the subsurface layer above 400 K, the presence of adsorbed CO enhances the thermal stability of surface Pt atoms. Furthermore, we also found that temperatures above 450 K cause a restructuring of the subsurface layer, which consequently strengthens the CO binding to the surface Pt sites, likely due to the presence of neighboring subsurface Pt atoms.« less

Self-assembled monolayer structures of hexadecylamine on Cu surfaces: density-functional theory.

PubMed

Liu, Shih-Hsien; Balankura, Tonnam; Fichthorn, Kristen A

2016-12-07

We used dispersion-corrected density-functional theory to probe possible structures for adsorbed layers of hexadecylamine (HDA) on Cu(100) and Cu(111). HDA forms self-assembled layers on these surfaces, analogous to alkanethiols on various metal surfaces, and it binds by donating electrons in the amine group to the Cu surface atoms, consistent with experiment. van der Waals interactions between the alkyl tails of HDA molecules are stronger than the interaction between the amine group and the Cu surfaces. Strong HDA-tail interactions lead to coverage-dependent tilting of the HDA layers, such that the tilt angle is larger for lower coverages. At full monolayer coverage, the energetically preferred binding configuration for HDA on Cu(100) is a (5 × 3) pattern - although we cannot rule out incommensurate structures - while the pattern is preferred on Cu(111). A major motivation for this study is to understand the experimentally observed capability of HDA as a capping agent for producing {100}-faceted Cu nanocrystals. Consistent with experiment, we find that HDA binds more strongly to Cu(100) than to Cu(111). This strong binding stems from the capability of HDA to form more densely packed layers on Cu(100), which leads to stronger HDA-tail interactions, as well as the stronger binding of the amine group to Cu(100). We estimate the surface energies of HDA-covered Cu(100) and Cu(111) surfaces and find that these surfaces are nearly isoenergetic. By drawing analogies to previous theoretical work, it seems likely that HDA-covered Cu nanocrystals could have kinetic shapes that primarily express {100} facets, as is seen experimentally.

Fundamental Design based on Current Distribution in Coaxial Multi-Layer Cable-in-Conduit Conductor

NASA Astrophysics Data System (ADS)

Hamajima, Takataro; Tsuda, Makoto; Yagai, Tsuyoshi; Takahata, Kazuya; Imagawa, Shinsaku

An imbalanced current distribution is often observed in cable-in-conduit (CIC) superconductors which are composed of multi-staged, triplet type sub-cables, and hence deteriorates the performance of the coils. Therefore, since it is very important to obtain a homogeneous current distribution in the superconducting strands, we propose a coaxial multi-layer type CIC conductor. We use a circuit model for all layers in the coaxial multi-layer CIC conductor, and derive a generalized formula governing the current distribution as explicit functions of the superconductor construction parameters, such as twist pitch, twist direction, radius of each layer, and number of superconducting (SC) strands and copper (Cu) strands. We apply the formula to design the coaxial multi-layer CIC which has the same number of SC strands and Cu strands of the CIC for Central Solenoid of ITER. We can design three kinds of the coaxial multi-layer CIC depending on distribution of SC and Cu strands on all layers. It is shown that the SC strand volume should be optimized as a function of SC and Cu strand distribution on the layers.

Gadolinium doped ceria interlayers for Solid Oxide Fuel Cells cathodes: Enhanced reactivity with sintering aids (Li, Cu, Zn), and improved densification by infiltration

NASA Astrophysics Data System (ADS)

Nicollet, Clement; Waxin, Jenny; Dupeyron, Thomas; Flura, Aurélien; Heintz, Jean-Marc; Ouweltjes, Jan Pieter; Piccardo, Paolo; Rougier, Aline; Grenier, Jean-Claude; Bassat, Jean-Marc

2017-12-01

This paper reports the study of the densification of 20% Gd doped ceria (Ce0.8Gd0.2O1.9 (GDC)) interlayers in SOFC cathodes through two different routes: the well-known addition of sintering elements, and an innovative densification process by infiltration. First, Li, Cu, and Zn nitrates were added to GDC powders. The effect of these additives on the densification was studied by dilatometry on pellets, and show a large decrease of the sintering temperature from 1330 °C (pure GDC), down to 1080 °C, 950 °C, and 930 °C for Zn, Cu, and Li addition, respectively. However, this promising result does not apply to screen-printed layers, which are more porous than pellets and in which the shrinkage is constrained by the substrate. The second approach consists in preparing a pre-sintered GDC layer, which is subsequently infiltrated with Ce and Gd nitrates and sintered at 1250 °C to increase its density. Such an approach results in highly dense GDC interlayers. Using La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) as electrode, the influence of the interlayers on the cathode performance was studied. The addition of sintering aids dramatically increases the cell resistances, most likely because the additives increase the reactivity between GDC and either Yttria Stabilized Zirconia (YSZ) or LSCF, thus losing the expected benefit related to the decrease of sintering temperatures. The interlayers prepared by infiltration do not induce additional resistances in the cell, which results in power densities of single cells 40-50% higher than those of cells prepared with commercial GDC interlayers, making this approach a valuable alternative to sintering aids.

Growth of Interfacial Intermetallic Compound Layer in Diffusion-Bonded SAC-Cu Solder Joints During Different Types of Thermomechanical Excursion

NASA Astrophysics Data System (ADS)

Kanjilal, Anwesha; Kumar, Praveen

2018-01-01

The effects of mechanical strain on the growth kinetics of interfacial intermetallic compounds (IMCs) sandwiched between Cu substrate and Sn-1.0 wt.%Ag-0.5 wt.%Cu (SAC105) solder have been investigated. Isothermal aging (IA) at 70°C and 125°C, and thermal cycling (TC) as well as thermomechanical cycling (TMC) with shear strain of 12.8% per cycle between -25°C and 125°C were applied to diffusion-bonded solder joints to study the growth behavior of the interfacial IMC layer under various types of thermomechanical excursion (TME). The microstructure of the solder joint tested under each TME was observed at regular intervals. It was observed that the growth rate of the IMC layer was higher in the case of TMC compared with TC or IA. This increased growth rate of the IMC layer in the presence of mechanical strain suggests an additional driving force that enhances the growth kinetics of the IMC. Finite element analysis was performed to gain insight into the effect of TC and TMC on the stress field in the solder joint, especially near the interface between the solder and the substrate. Finally, an analytical model was developed to quantify the effect of strain on the effective diffusivity and express the growth kinetics for all three types of TME using a single expression.

Cuprous Oxide as a Potential Low-Cost Hole-Transport Material for Stable Perovskite Solar Cells.

PubMed

Nejand, Bahram Abdollahi; Ahmadi, Vahid; Gharibzadeh, Saba; Shahverdi, Hamid Reza

2016-02-08

Inorganic hole-transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole-transport material for stable, low-cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu2O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu2O layer on the pinhole-free perovskite layer produces devices with power conversion efficiency values of up to 8.93%. The engineered Cu2O layers showed uniform, compact, and crack-free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Study of Electromigration-Induced Failures on Cu Pillar Bumps Joined to OSP and ENEPIG Substrates

NASA Astrophysics Data System (ADS)

Hsiao, Yu-Hsiang; Lin, Kwang-Lung; Lee, Chiu-Wen; Shao, Yu-Hsiu; Lai, Yi-Shao

2012-12-01

This work studies electromigration (EM)-induced failures on Cu pillar bumps joined to organic solderability preservative (OSP) on Cu substrates (OSP-bumps) and electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) under bump metallurgy (UBM) on Cu substrates (ENEPIG-bumps). Two failure modes (Cu pad consumption and gap formation) were found with OSP-bumps, but only one failure mode (gap formation) was found with ENEPIG-bumps. The main interfacial compound layer was the Cu6Sn5 compound, which suffered significant EM-induced dissolution, eventually resulting in severe Cu pad consumption at the cathode side for OSP-bumps. A (Cu,Ni)6Sn5 layer with strong resistance to EM-induced dissolution exists at the joint interface when a nickel barrier layer is incorporated at the cathode side (Ni or ENEPIG), and these imbalanced atomic fluxes result in the voids and gap formation. OSP-bumps showed better lifetime results than ENEPIG-bumps for several current stressing conditions. The inverse Cu atomic flux ( J Cu,chem) which diffuses from the Cu pad to cathode side retards the formation of voids. The driving force for J Cu,chem comes from the difference in chemical potential between the (Cu,Ni)6Sn5 and Cu6Sn5 phases.

Effects of post-reflow cooling rate and thermal aging on growth behavior of interfacial intermetallic compound between SAC305 solder and Cu substrate

NASA Astrophysics Data System (ADS)

Hu, Xiaowu; Xu, Tao; Jiang, Xiongxin; Li, Yulong; Liu, Yi; Min, Zhixian

2016-04-01

The interfacial reactions between Cu and Sn3Ag0.5Cu (SAC305) solder reflowed under various cooling rates were investigated. It is found that the cooling rate is an important parameter in solder reflow process because it influences not only microstructure of solder alloy but also the morphology and growth of intermetallic compounds (IMCs) formed between solder and Cu substrate. The experimental results indicate that only scallop-like Cu6Sn5 IMC layer is observed between solder and Cu substrate in case of water cooling and air cooling, while bilayer composed of scallop-like Cu6Sn5 and thin layer-like Cu3Sn is detected under furnace cooling due to sufficient reaction time to form Cu3Sn between Cu6Sn5 IMC and Cu substrate which resulted from slow cooling rate. Samples with different reflow cooling rates were further thermal-aged at 423 K. And it is found that the thickness of IMC increases linearly with square root of aging time. The growth constants of interfacial IMC layer during aging were obtained and compared for different cooling rates, indicating that the IMC layer thickness increased faster in samples under low cooling rate than in the high cooling rate under the same aging condition. The long prismatic grains were formed on the existing interfacial Cu6Sn5 grains to extrude deeply into solder matrix with lower cooling rate and long-term aging, and the Cu6Sn5 grains coarsened linearly with cubic root of aging time.

A novel nonenzymatic amperometric hydrogen peroxide sensor based on CuO@Cu2O nanowires embedded into poly(vinyl alcohol).

PubMed

Chirizzi, Daniela; Guascito, Maria Rachele; Filippo, Emanuela; Tepore, Antonio

2016-01-15

A new, very simple, rapid and inexpensive nonenzymatic amperometric sensor for hydrogen peroxide (H2O2) detection is proposed. It is based on the immobilization of cupric/cuprous oxide core shell nanowires (CuO@Cu2O-NWs) in a poly(vinyl alcohol) (PVA) matrix directly drop casted on a glassy carbon electrode surface to make a CuO@Cu2O core shell like NWs PVA embedded (CuO@Cu2O-NWs/PVA) sensor. CuO nanowires with mean diameters of 120-170nm and length in the range 2-5μm were grown by a simple catalyst-free thermal oxidation process based on resistive heating of pure copper wires at ambient conditions. The oxidation process of the copper wire surface led to the formation of a three layered structure: a thick Cu2O bottom layer, a CuO thin intermediate layer and CuO nanowires. CuO nanowires were carefully scratched from Cu2O layer with a sharp knife, dispersed into ethanol and sonicated. Then, the NWs were embedded in PVA matrix. The morphological and spectroscopic characterization of synthesized CuO-NWs and CuO@Cu2O-NWs/PVA were performed by transmission electron microscopy (TEM), selected area diffraction pattern (SAD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analysis. Moreover a complete electrochemical characterization of these new CuO@Cu2O-NWs/PVA modified glassy carbon electrodes was performed by Cyclic Voltammetry (CV) and Cronoamperometry (CA) in phosphate buffer (pH=7; I=0.2) to investigate the sensing properties of this material against H2O2. The electrochemical performances of proposed sensors as high sensitivity, fast response, reproducibility and selectivity make them suitable for the quantitative determination of hydrogen peroxide substrate in batch analysis. Copyright © 2015 Elsevier B.V. All rights reserved.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

PubMed

Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

2016-01-07

Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

2017-12-01

Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

Efficient CH3NH3PbI3 perovskite/fullerene planar heterojunction hybrid solar cells with oxidized Ni/Au/Cu transparent electrode

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-02-01

We demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a thermally oxidized nickel/gold/copper (Ni/Au/Cu) trilayer transparent electrode. Oxidized Ni/Au/Cu is a high transparent layer and has less resistance than the oxidized Ni/Au layer. Like the oxidized Ni/Au layer, oxidized Ni and Cu in oxidized Ni/Au/Cu could perform as a hole transport layer of the perovskite-based SCs. It leads to improved perovskite SC performance on an open circuit voltage of 1.01 V, a short circuit current density of 14.36 mA/cm2, a fill factor of 76.7%, and a power conversion efficiency (η%) of 11.1%. The η% of perovskite SCs with oxidized Ni (10 nm)/Au (6 nm)/Cu (1 nm) improved by approximately 10% compared with that of perovskite SCs with oxidized Ni/Au.

Microstructures and Properties of 40Cu/Ag(Invar) Composites Fabricated by Powder Metallurgy and Subsequent Thermo-Mechanical Treatment

NASA Astrophysics Data System (ADS)

Zhang, Xin; Huang, Yingqiu; Liu, Xiangyu; Yang, Lei; Shi, Changdong; Wu, Yucheng; Tang, Wenming

2018-03-01

Composites of 40Cu/Ag(Invar) were prepared via pressureless sintering and subsequent thermo-mechanical treatment from raw materials of electroless Ag-plated Invar alloy powder and electrolytic Cu powder. Microstructures and properties of the prepared composites were studied to evaluate the effect of the Ag layer on blocking Cu/Invar interfacial diffusion in the composites. The electroless-plated Ag layer was dense, uniform, continuous, and bonded tightly with the Invar alloy substrate. During sintering of the composites, the Ag layer effectively prevented Cu/Invar interfacial diffusion. During cold-rolling, the Ag layer was deformed uniformly with the Invar alloy particles. The composites exhibited bi-continuous network structure and considerably improved properties. After sintering at 775 °C and subsequent thermo-mechanical treatment, the 40Cu/Ag(Invar) composites showed satisfactory comprehensive properties: relative density of 99.0 pct, hardness of HV 253, thermal conductivity of 55.7 W/(m K), and coefficient of thermal expansion of 11.2 × 10-6/K.

Graphene-copper composite with micro-layered grains and ultrahigh strength

PubMed Central

Wang, Lidong; Yang, Ziyue; Cui, Ye; Wei, Bing; Xu, Shichong; Sheng, Jie; Wang, Miao; Zhu, Yunpeng; Fei, Weidong

2017-01-01

Graphene with ultrahigh intrinsic strength and excellent thermal physical properties has the potential to be used as the reinforcement of many kinds of composites. Here, we show that very high tensile strength can be obtained in the copper matrix composite reinforced by reduced graphene oxide (RGO) when micro-layered structure is achieved. RGO-Cu powder with micro-layered structure is fabricated from the reduction of the micro-layered graphene oxide (GO) and Cu(OH)2 composite sheets, and RGO-Cu composites are sintered by spark plasma sintering process. The tensile strength of the 5 vol.% RGO-Cu composite is as high as 608 MPa, which is more than three times higher than that of the Cu matrix. The apparent strengthening efficiency of RGO in the 2.5 vol.% RGO-Cu composite is as high as 110, even higher than that of carbon nanotube, multilayer graphene, carbon nano fiber and RGO in the copper matrix composites produced by conventional MLM method. The excellent tensile and compressive strengths, high hardness and good electrical conductivity are obtained simultaneously in the RGO-Cu composites. The results shown in the present study provide an effective method to design graphene based composites with layered structure and high performance. PMID:28169306

Alternating gradient photodetector

NASA Technical Reports Server (NTRS)

Overhauser, Albert W. (Inventor); Maserjian, Joseph (Inventor)

1989-01-01

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Infrared Brazing of Ti50Ni50 Shape Memory Alloy and Inconel 600 Alloy with Two Ag-Cu-Ti Active Braze Alloys

NASA Astrophysics Data System (ADS)

Shiue, Ren-Kae; Wu, Shyi-Kaan; Yang, Sheng-Hao

2017-02-01

Infrared brazing of Ti50Ni50 SMA and Inconel 600 alloy using Cusil-ABA and Ticusil filler metals has been investigated. The joints were dominated by Ag-Cu eutectic with proeutectic Cu in the Cusil-ABA brazed joint and with proeutectic Ag in the Ticusil one. A continuous curved belt composed of a Ni3Ti layer and a (Cu x Ni1- x )2Ti layer formed in the brazed Ti50Ni50/Ticusil/Inconel 600 joint. On the Ti50Ni50 SMA side, an intermetallic layer of (Cu x Ni1- x )2Ti formed in all joints, with x values around 0.81 and 0.47. Layers of (Cu x Ni1- x )2Ti, Ni3Ti, and mixed Ni3Ti and Ni2Cr intermetallics were observed next to the Inconel 600 substrate in the brazed Ti50Ni50/Cusil-ABA/Inconel 600 joint. The maximum shear strengths of the joints using the Cusil-ABA filler metal and the Ticusil filler metal were 324 and 300 MPa, respectively. In the Cusil-ABA brazed joint, cracks with cleavage-dominated fracture propagated along the (Cu x Ni1- x )2Ti interfacial layer next to the Ti50Ni50 SMA substrate. In the Ticusil brazed joint, ductile dimple fracture occurred in the Ag-rich matrix near the Inconel 600 alloy substrate. The absence of a detrimental Ti-Fe-(Cu) layer on the Inconel 600 substrate side can effectively improve the shear strength of the joint.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1991-01-01

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Diaqua­(2,2′-bipyridine-κ2 N,N′)bis­(perchlorato-κO)copper(II)

PubMed Central

Damous, Maamar; Hamlaoui, Meriem; Bouacida, Sofiane; Merazig, Hocine; Daran, Jean-Claude

2011-01-01

The central CuN2O4 motif of the title compound, [Cu(ClO4)2(C10H8N2)(H2O)2], exhibits a Jahn–Teller-distorted octa­hedral geometry around the metal atom, showing a considerably long Cu—O bond distance of 2.5058 (12) Å towards the second perchlorate group, giving a (4 + 1+1)-type coordination mode. In the crystal, the components are linked via inter­molecular O—H⋯O hydrogen bonds, forming layers parallel to (001). Additional stabilization within these layers is provided by π–π [centroid–centroid distances of 3.7848 (9)–4.4231 (9) Å] stacking inter­actions. PMID:21754328

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Solar Absorber Cu 2 ZnSnS 4 and its Parent Multilayers ZnS/SnS 2 /Cu 2 S Synthesized by Atomic Layer Deposition and Analyzed by X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Riha, Shannon C.; Zinovev, Alexander V.

2015-06-01

Presented here are results of x-ray photoelectron spectroscopy (XPS) on multilayers of metal-sulfide binaries ZnS, SnS2, and Cu2S grown by atomic layer deposition (ALD) on Si substrates, and of Cu2ZnSnS4 (CZTS) formed upon 450 °C annealing of the parent multilayer ZnS/SnS2/Cu2S. Survey and detailed spectral analysis of the multilayer ZnS/SnS2/Cu2S are presented step-wise, as each layer was sequentially added by ALD. The set of data is finalized with spectra of the resulting alloy CZTS. XPS analyses indicate significant mixing between SnS2 and Cu2S, which favors CZTS formation within the ALD approach.

Formation Mechanism of CuAlO2 Prepared by Rapid Thermal Annealing of Al2O3/Cu2O/Sapphire Sandwich Structure

NASA Astrophysics Data System (ADS)

Shih, C. H.; Tseng, B. H.

Single-phase CuAlO2 films were successfully prepared by thin-film reaction of an Al2O3/Cu2O/sapphire sandwich structure. We found that the processing parameters, such as heating rate, holding temperature and annealing ambient, were all crucial to form CuAlO2 without second phases. Thermal annealing in pure oxygen ambient with a lower temperature ramp rate might result in the formation of CuAl2O4 in addition to CuAlO2, since part of Cu2O was oxidized to form CuO and caused the change in reaction path, i.e. CuO + Al2O3 → CuAl2O4. Typical annealing conditions successful to prepare single-phase CuAlO2 would be to heat the sample with a temperature rampt rate higher than 7.3 °C/sec and hold the temperature at 1100 °C in air ambient. The formation mechanism of CuAlO2 has also been studied by interrupting the reaction after a short period of annealing. TEM observations showed that the top Al2O3 layer with amorphous structure reacted immediately with Cu2O to form CuAlO2 in the early stage and then the remaining Cu2O reacted with the sapphire substrate.

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

NASA Astrophysics Data System (ADS)

Kao, Szu-Tsung; Duh, Jenq-Gong

2005-08-01

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)3Sn4 layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)6Sn5 formed along with (Ni, Cu)3Sn4. However, only one (Cu, Ni)6Sn5 layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.

Fabrication of Optimized Superconducting Phase Inverters Based on Superconductor-Ferromagnet-Superconductor pi π -Junctions

NASA Astrophysics Data System (ADS)

Bolginov, V. V.; Rossolenko, A. N.; Shkarin, A. B.; Oboznov, V. A.; Ryazanov, V. V.

2018-03-01

We have implemented a trilayer technological approach to fabricate Nb-Cu_{0.47} Ni_{0.53}-Nb superconducting phase inverters (π -junctions) with enhanced critical current. Within this technique, all three layers of the superconductor-ferromagnet-superconductor junction deposited in a single vacuum cycle that have allowed us to obtain π -junctions with critical current density up to 20 kA/cm^2. The value achieved is a factor of 10 higher than for the step-by-step method used in earlier works. Our additional experiments have shown that this difference is related to a bilayered CuNi/Cu barrier used in the case of the step-by-step technique and interlayer diffusion at the CuNi/Cu interface. We show that the interlayer diffusion can be utilized for fine tuning of the 0{-}π transition temperature of already fabricated junctions. The results obtained open new opportunities for the CuNi-based phase inverters in digital and quantum Josephson electronics.

pH-Dependent two novel heteronuclear Cu(II)/Sr(II) coordination polymers constructed from 1,3,5-benzenetricarboxylic acid: Synthesis, crystal structures and properties

NASA Astrophysics Data System (ADS)

Sun, Qiao-Zhen; Yin, Yi-Biao; Pan, Jun-Qiao; Chai, Li-Yuan; Su, Nan; Liu, Hui; Zhao, Yi-Lin; Liu, Xing-Tao

2016-02-01

Two novel heteronuclear coordination polymers, namely, [CuSr2(BTC)2]·10H2O (1) and [Cu2Sr(H4TMA)2]·4H2O (2) (H3BTC = 1,3,5-benzenetricarboxylic acid, H4TMA = 2-hydroxytrimesic acid) were hydrothermally synthesized as pH-dependent products and characterized by elemental analysis (EA), infrared spectroscopy (IR) and single crystal X-ray diffraction. For compound 1, it displays a 3D structure with (2,5,6)-connected net topology. For 2, the H3BTC ligand is oxidized into H4TMA and compound 2 features a 2D layer structure, which is further linked by Cu⋯Cu and Cu⋯O supramolecular interactions into a 3D structure. The results show that the pH plays a crucial role in determining the structure of the compounds. In addition, thermalgravimetric analysis of compounds 1-2 and luminescence property of 1 are also investigated.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Regenerable Cu-intercalated MnO2 layered cathode for highly cyclable energy dense batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Gautam G.; Gallaway, Joshua W.; Turney, Damon E.

2017-03-06

Manganese dioxide cathodes are inexpensive and have high theoretical capacity (based on two electrons) of 617 mAh g-1, making them attractive for low-cost, energy-dense batteries. They are used in non-rechargeable batteries with anodes like zinc. Only ~10% of the theoretical capacity is currently accessible in rechargeable alkaline systems. Attempts to access the full capacity using additives have been unsuccessful. We report a class of Bi-birnessite (a layered manganese oxide polymorph mixed with bismuth oxide (Bi2O3)) cathodes intercalated with Cu2+ that deliver near-full two-electron capacity reversibly for >6,000 cycles. The key to rechargeability lies in exploiting the redox potentials of Cumore » to reversibly intercalate into the Bi-birnessite-layered structure during its dissolution and precipitation process for stabilizing and enhancing its charge transfer characteristics. This process holds promise for other applications like catalysis and intercalation of metal ions into layered structures. A large prismatic rechargeable Zn-birnessite cell delivering ~140 Wh l-1 is shown.« less

Deuterium transport in Cu, CuCrZr, and Cu/Be

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Hankins, M. R.; Longhurst, G. R.; Pawelko, R. J.

This paper presents the results of deuterium implantation/permeation experiments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D 3+ ion beam with particle flux densities of 5 × 10 19 to 7 × 10 19 D/m 2 s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr alloy, (2.0 × 10 -2 m 2/s, 1.2 eV) for diffusivity and (2.9 × x10 -14 m 4/s, 1.92 eV) for surface molecular recombination coefficients; OFHC Cu, (2.1 × 10 -6 m 2/s, 0.52 eV) for diffusivity and (9.1 × 10 -18 m 4/s, 0.99 eV) for surface molecular recombination coefficients. TMAP4 simulation of permeation data measured for a Cu/Be bi-layer sample was achieved using a four-layer structure (Cu/BeO interface/Be/BeO back surface) and recommended values for diffusivity and solubility in Be, BeO and Cu.

Nanowire surface fastener fabrication on flexible substrate.

PubMed

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-27

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm -2 ) and low contact resistivity (2.2 × 10 -4 Ω cm 2 ).

Nanowire surface fastener fabrication on flexible substrate

NASA Astrophysics Data System (ADS)

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-01

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm‑2) and low contact resistivity (2.2 × 10‑4 Ω cm2).

Fabrication of nanocrystalline surface composite layer on Cu plate under ball collisions.

PubMed

Romankov, S; Park, Y C; Yoon, J M

2014-10-01

It was demonstrated that the severe plastic deformation of a surface induced by repeated ball collisions can be effectively used for fabrication of the nanocrystalline surface composite layers. The Cu disk was fixed at the top of a vibration chamber and ball treated. Al, Zr, Ni, Co and Fe were introduced into a Cu plate as contaminants from the grinding media one after the other by 15-min ball treatment. The composite structure was formed as a result of mechanical intermixing of the components. The particle size in as-fabricated layer ranged from 2 nm to 20 nm, with average values of about 7 nm. As-fabricated layer contained non-equilibrium multicomponent solid solution based on FCC Cu crystal structure, Zr-based phase, nanosized steel debris and amorphous phase. The hardness of the as-fabricated composite was almost ten times that of the initial Cu plate.

A highly sensitive hydrogen sensor with gas selectivity using a PMMA membrane-coated Pd nanoparticle/single-layer graphene hybrid.

PubMed

Hong, Juree; Lee, Sanggeun; Seo, Jungmok; Pyo, Soonjae; Kim, Jongbaeg; Lee, Taeyoon

2015-02-18

A polymer membrane-coated palladium (Pd) nanoparticle (NP)/single-layer graphene (SLG) hybrid sensor was fabricated for highly sensitive hydrogen gas (H2) sensing with gas selectivity. Pd NPs were deposited on SLG via the galvanic displacement reaction between graphene-buffered copper (Cu) and Pd ion. During the galvanic displacement reaction, graphene was used as a buffer layer, which transports electrons from Cu for Pd to nucleate on the SLG surface. The deposited Pd NPs on the SLG surface were well-distributed with high uniformity and low defects. The Pd NP/SLG hybrid was then coated with polymer membrane layer for the selective filtration of H2. Because of the selective H2 filtration effect of the polymer membrane layer, the sensor had no responses to methane, carbon monoxide, or nitrogen dioxide gas. On the contrary, the PMMA/Pd NP/SLG hybrid sensor exhibited a good response to exposure to 2% H2: on average, 66.37% response within 1.81 min and recovery within 5.52 min. In addition, reliable and repeatable sensing behaviors were obtained when the sensor was exposed to different H2 concentrations ranging from 0.025 to 2%.

The Effect of Mo Particles Addition in Ag-Cu-Ti Filler Alloy on Ti(C,N)-Based Cermet/45 Steel-Brazed Joints

NASA Astrophysics Data System (ADS)

He, Hu; Du, Xueming; Huang, Xiaokai; Xu, Weijian; Yao, Zhenhua

2018-05-01

Reliable brazing of Ti(C,N)-based cermet and 45 steel was successfully achieved by using the Mo-particle-reinforced Ag-Cu-Ti composite filler. The effects of Mo content on the interfacial microstructure and mechanical properties of Ti(C,N)-based cermet/45 steel joints were analyzed. The results showed that the joint microstructure was primarily composed of Ni3Ti+Cu3Ti2, Ag(s,s)+Cu(s.s), CuTi+Mo, Ti-based solid solution, and FeTi+Fe2Ti. With the increase in Mo content in filler, the thickness of the Ni3Ti+Cu3Ti2 layer adjacent to the Ti(C,N)-based cermet decreases, while more blocky Ti-Cu intermetallic were observed in the brazing seam. The shear strength of the joint could be significantly improved by adding suitable amounts of Mo into the Ag-Cu-Ti filler, and the peak value of 263 MPa was achieved when the alloys were brazed with Ag-Cu-Ti+8wt.%Mo composite filler at 920 °C for 20 min.

Interfacial Reaction and IMC Growth of an Ultrasonically Soldered Cu/SAC305/Cu Structure during Isothermal Aging

PubMed Central

Long, Weifeng; Hu, Xiaowu; Fu, Yanshu

2018-01-01

In order to accelerate the growth of interfacial intermetallic compound (IMC) layers in a soldering structure, Cu/SAC305/Cu was first ultrasonically spot soldered and then subjected to isothermal aging. Relatively short vibration times, i.e., 400 ms and 800 ms, were used for the ultrasonic soldering. The isothermal aging was conducted at 150 °C for 0, 120, 240, and 360 h. The evolution of microstructure, the IMC layer growth mechanism during aging, and the shear strength of the joints after aging were systemically investigated. Results showed the following. (i) Formation of intermetallic compounds was accelerated by ultrasonic cavitation and streaming effects, the thickness of the interfacial Cu6Sn5 layer increased with aging time, and a thin Cu3Sn layer was identified after aging for 360 h. (ii) The growth of the interfacial IMC layer of the ultrasonically soldered Cu/SAC305/Cu joints followed a linear function of the square root of the aging time, revealing a diffusion-controlled mechanism. (iii) The tensile shear strength of the joint decreased to a small extent with increasing aging time, owing to the combined effects of IMC grain coarsening and the increase of the interfacial IMC. (iv) Finally, although the fracture surfaces and failure locations of the joint soldered with 400 ms and 800 ms vibration times show similar characteristics, they are influenced by the aging time. PMID:29316625

Properties of Sn3.8Ag0.7Cu Solder Alloy with Trace Rare Earth Element Y Additions

NASA Astrophysics Data System (ADS)

Hao, H.; Tian, J.; Shi, Y. W.; Lei, Y. P.; Xia, Z. D.

2007-07-01

In the current research, trace rare earth (RE) element Y was incorporated into a promising lead-free solder, Sn3.8Ag0.7Cu, in an effort to improve the comprehensive properties of Sn3.8Ag0.7Cu solder. The range of Y content in Sn3.8Ag0.7Cu solder alloys varied from 0 wt.% to 1.0 wt.%. As an illustration of the advantage of Y doping, the melting temperature, wettability, mechanical properties, and microstructures of Sn3.8Ag0.7CuY solder were studied. Trace Y additions had little influence on the melting behavior, but the solder showed better wettability and mechanical properties, as well as finer microstructures, than found in Y-free Sn3.8Ag0.7Cu solder. The Sn3.8Ag0.7Cu0.15Y solder alloy exhibited the best comprehensive properties compared to other solders with different Y content. Furthermore, interfacial and microstructural studies were conducted on Sn3.8Ag0.7Cu0.15Y solder alloys, and notable changes in microstructure were found compared to the Y-free alloy. The thickness of an intermetallic compound layer (IML) was decreased during soldering, and the growth of the IML was suppressed during aging. At the same time, the growth of intermetallic compounds (IMCs) inside the solder was reduced. In particular, some bigger IMC plates were replaced by fine, granular IMCs.

Distinct oxygen hole doping in different layers of Sr₂CuO 4-δ/La₂CuO₄ superlattices

DOE PAGES

Smadici, S.; Lee, J. C. T.; Rusydi, A.; ...

2012-03-28

X-ray absorption in Sr₂CuO 4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲x optimal in bulk La 2-xSr xCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

NASA Astrophysics Data System (ADS)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-05-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

Formation of Multilayer Cu Islands Embedded beneath the Surface of Graphite: Characterization and Fundamental Insights

DOE PAGES

Lii-Rosales, Ann; Han, Yong; Evans, James W.; ...

2018-02-06

Here in this paper, we present an extensive experimental study of the conditions under which Cu forms encapsulated islands under the top surface layers of graphite, as a result of physical vapor deposition of Cu on argon-ion-bombarded graphite. When the substrate is held at 800 K during deposition, conditions are optimal for formation of encapsulated multilayer Cu islands. Deposition temperatures below 600 K favor adsorbed Cu clusters, while deposition temperatures above 800 K favor a different type of feature that is probably a single-layer intercalated Cu island. The multilayer Cu islands are characterized with respect to size and shape, thicknessmore » and continuity of the graphitic overlayer, relationship to graphite steps, and stability in air. The experimental techniques are scanning tunneling microscopy and X-ray photoelectron spectroscopy. We also present an extensive study using density functional theory to compare stabilities of a wide variety of configurations of Cu atoms, Cu clusters, and Cu layers on/under the graphite surface. The only configuration that is significantly more stable under the graphite surface than on top of it, is a single Cu atom. This analysis leads us to conclude that formation of encapsulated Cu islands is kinetically driven, rather than thermodynamically driven.« less

Formation of Multilayer Cu Islands Embedded beneath the Surface of Graphite: Characterization and Fundamental Insights

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lii-Rosales, Ann; Han, Yong; Evans, James W.

Here in this paper, we present an extensive experimental study of the conditions under which Cu forms encapsulated islands under the top surface layers of graphite, as a result of physical vapor deposition of Cu on argon-ion-bombarded graphite. When the substrate is held at 800 K during deposition, conditions are optimal for formation of encapsulated multilayer Cu islands. Deposition temperatures below 600 K favor adsorbed Cu clusters, while deposition temperatures above 800 K favor a different type of feature that is probably a single-layer intercalated Cu island. The multilayer Cu islands are characterized with respect to size and shape, thicknessmore » and continuity of the graphitic overlayer, relationship to graphite steps, and stability in air. The experimental techniques are scanning tunneling microscopy and X-ray photoelectron spectroscopy. We also present an extensive study using density functional theory to compare stabilities of a wide variety of configurations of Cu atoms, Cu clusters, and Cu layers on/under the graphite surface. The only configuration that is significantly more stable under the graphite surface than on top of it, is a single Cu atom. This analysis leads us to conclude that formation of encapsulated Cu islands is kinetically driven, rather than thermodynamically driven.« less

Microstructure and mechanical properties of Al/Cu/Mg laminated composite sheets produced by the ARB proces

NASA Astrophysics Data System (ADS)

Rahmatabadi, Davood; Tayyebi, Moslem; Hashemi, Ramin; Faraji, Ghader

2018-05-01

In the present study, an Al/Cu/Mg multi-layered composite was produced by accumulative roll bonding (ARB) through seven passes, and its microstructure and mechanical properties were evaluated. The microstructure investigations show that plastic instability occurred in both the copper and magnesium reinforcements in the primary sandwich. In addition, a composite with a perfectly uniform distribution of copper and magnesium reinforcing layers was produced during the last pass. By increasing the number of ARB cycles, the microhardness of the layers including aluminum, copper, and magnesium was significantly increased. The ultimate tensile strength of the sandwich was enhanced continually and reached a maximum value of 355.5 MPa. This strength value was about 3.2, 2, and 2.1 times higher than the initial strength values for the aluminum, copper, and magnesium sheets, respectively. Investigation of tensile fracture surfaces during the ARB process indicated that the fracture mechanism changed to shear ductile at the seventh pass.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

An assessment of silver copper sulfides for photovoltaic applications: theoretical and experimental insights† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6ta03376h Click here for additional data file. Click here for additional data file.

PubMed Central

Savory, Christopher N.; Ganose, Alex M.; Travis, Will; Atri, Ria S.; Palgrave, Robert G.

2016-01-01

As the worldwide demand for energy increases, low-cost solar cells are being looked to as a solution for the future. To attain this, non-toxic earth-abundant materials are crucial, however cell efficiencies for current materials are limited in many cases. In this article, we examine the two silver copper sulfides AgCuS and Ag3CuS2 as possible solar absorbers using hybrid density functional theory, diffuse reflectance spectroscopy, XPS and Hall effect measurements. We show that both compounds demonstrate promising electronic structures and band gaps for high theoretical efficiency solar cells, based on Shockley–Queisser limits. Detailed analysis of their optical properties, however, indicates that only AgCuS should be of interest for PV applications, with a high theoretical efficiency. From this, we also calculate the band alignment of AgCuS against various buffer layers to aid in future device construction. PMID:27774149

Fabrication of Cu-Ni mixed phase layer using DC electroplating and suppression of Kirkendall voids in Sn-Ag-Cu solder joints

NASA Astrophysics Data System (ADS)

Chee, Sang-Soo; Lee, Jong-Hyun

2014-05-01

A solderable layer concurrently containing Cu-rich and Ni-rich phases (mixed-phase layer, MPL) was fabricated by direct current electroplating under varying process conditions. Current density was considered as the main parameter to adjust the microstructure and composition of MPL during the electroplating process, and deposit thickness were evaluated as functions of plating time. As a result, it was observed that the coral-like structure that consisted of Cu-rich and Ni-rich phases grew in the thickness direction. The most desirable microstructure was obtained at a relatively low current density of 0.4 mA/cm2. In other words, the surface was the smoothest and defect-free at this current density. The electroplating rate was slightly enhanced with an increase in current density. Investigations of its solid-state reaction properties, including the formation of Kirkendall voids, were also carried out after reflow soldering with Sn-3.0 Ag-0.5 Cu solder balls. In the solid-state aging experiment at 125°C, Kirkendall voids at the normal Sn-3.0 Ag-0.5 Cu solder/Cu interface were easily formed after just 240 h. Meanwhile, the presence of an intermetallic compound (IMC) layer created in the solder/MPL interface indicated a slightly lower growth rate, and no Kirkendall voids were observed in the IMC layer even after 720 h.

Study of Sn and SnAgCu Solders Wetting Reaction on Ni/Pd/Au Substrates

NASA Astrophysics Data System (ADS)

Liu, C. Y.; Wei, Y. S.; Lin, E. J.; Hsu, Y. C.; Tang, Y. K.

2016-12-01

Wetting reactions of pure Sn and Sn-Ag-Cu solder balls on Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates were investigated. The (Au, Pd)Sn4 phase formed in the initial interfacial reaction between pure Sn and Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates. Then, the initially formed (Au, Pd)Sn4 compound layer either dissolved or spalled into the molten Sn solder with 3 s of reflowing. The exposed Ni under-layer reacted with Sn solder and formed an interfacial Ni3Sn4 compound. We did not observe spalling compound in the Sn-Ag-Cu case, either on the thin Au (100 Å) or the thick Au (1000 Å) substrates. This implies that the Cu content in the Sn-Ag-Cu solder can efficiently suppress the spalling effect and really stabilize the interfacial layer. Sn-Ag-Cu solder has a better wetting than that of the pure Sn solder, regardless of the Au thickness of the Au/Pd/Ni substrate. For both cases of pure Sn and Sn-Ag-Cu, the initial wetting (<3-s reflowing) on the thin Au (100 Å) substrate is better than that of the thick Au (1000 Å) substrate. Over 3-s reflowing, the wetting on the thicker Au layer (1000 Å) substrate becomes better than the wetting on the thinner Au layer (100 Å) substrate.

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

NASA Astrophysics Data System (ADS)

Zhang, Lei; Xu, Haiyang; Wang, Zhongqiang; Yu, Hao; Ma, Jiangang; Liu, Yichun

2016-01-01

The coexistence of uniform bipolar and unipolar resistive-switching (RS) characteristics was demonstrated in a double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device. By changing the compliance current (CC) from 1 mA to 10 mA, the RS behavior can be converted from the bipolar mode (BRS) to the unipolar mode (URS). The temperature dependence of low resistance states further indicates that the CFs are composed of the Ag atoms and Cu vacancies for the BRS mode and URS mode, respectively. For this double-layer structure device, the thicker conducting filaments (CFs) will be formed in the ZnS-Ag layer, and it can act as tip electrodes. Thus, the formation and rupture of these two different CFs are located in the CuAlO2 layer, realizing the uniform and stable BRS and URS.

Comparative study on the passivation layers of copper sulphide minerals during bioleaching

NASA Astrophysics Data System (ADS)

Fu, Kai-bin; Lin, Hai; Mo, Xiao-lan; Wang, Han; Wen, Hong-wei; Wen, Zi-long

2012-10-01

The bioleaching of copper sulphide minerals was investigated by using A. ferrooxidans ATF6. The result shows the preferential order of the minerals bioleaching as djurleite>bornite>pyritic chalcopyrite>covellite>porphyry chalcopyrite. The residues were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is indicated that jarosite may not be responsible for hindered dissolution. The elemental sulfur layer on the surface of pyritic chalcopyrite residues is cracked. The compact surface layer of porphyry chalcopyrite may strongly hinder copper extraction. X-ray photoelectron spectroscopy (XPS) further confirms that the passivation layers of covellite, pyritic chalcopyrite, and porphyry chalcopyrite are copper-depleted sulphide Cu4S11, S8, and copper-rich iron-deficient polysulphide Cu4Fe2S9, respectively. The ability of these passivation layers was found as Cu4Fe2S9>Cu4S11>S8>jarosite.

Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer

NASA Astrophysics Data System (ADS)

Pak, Jinsu; Min, Misook; Cho, Kyungjune; Lien, Der-Hsien; Ahn, Geun Ho; Jang, Jingon; Yoo, Daekyoung; Chung, Seungjun; Javey, Ali; Lee, Takhee

2016-10-01

Photoswitching response times (rise and decay times) of a vertical organic and inorganic heterostructure with p-type copper phthalocyanine (CuPc) and n-type molybdenum disulfide (MoS2) semiconductors are investigated. By stacking a CuPc layer on MoS2 field effect transistors, better photodetection capability and fast photoswitching rise and decay phenomena are observed. Specifically, with a 2 nm-thick CuPc layer on the MoS2 channel, the photoswitching decay time decreases from 3.57 s to 0.18 s. The p-type CuPc layer, as a passivation layer, prevents the absorption of oxygen on the surface of the MoS2 channel layer, which results in a shortened photoswitching decay time because adsorbed oxygen destroys the balanced ratio of electrons and holes, leading to the interruption of recombination processes. The suggested heterostructure may deliver enhanced photodetection abilities and photoswitching characteristics for realizing ultra-thin and sensitive photodetectors.

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Intrinsically water-repellent copper oxide surfaces; An electro-crystallization approach

NASA Astrophysics Data System (ADS)

Akbari, Raziyeh; Ramos Chagas, Gabriela; Godeau, Guilhem; Mohammadizadeh, Mohammadreza; Guittard, Frédéric; Darmanin, Thierry

2018-06-01

Use of metal oxide thin layers is increased due to their good durability under environmental conditions. In this work, the repeatable nanostructured crystalite Cu2O thin films, developed by electrodeposition method without any physical and chemical modifications, demonstrate good hydrophobicity. Copper (I) oxide (Cu2O) layers were fabricated on gold/Si(1 0 0) substrates by different electrodeposition methods i.e. galvanostatic deposition, cyclic voltammetry, and pulse potentiostatic deposition and using copper sulfate (in various concentrations) as a precursor. The greatest crystalline face on prepared Cu2O samples is (1 1 1) which is the most hydrophobic facet of Cu2O cubic structure. Indeed, different crystallite structures such as nanotriangles and truncated octahedrons were formed on the surface for various electrodeposition methods. The increase of the contact angle (θw) measured by the rest time, reaching to about 135°, was seen at different rates and electrodeposition methods. In addition, two-step deposition surfaces were also prepared by applying two of the mentioned methods, alternatively. In general, the morphology of the two-step deposition surfaces showed some changes compared to that of one-step samples, allowing the formation of different crystallite shapes. Moreover, the wettability behavior showd the larger θw of the two-step deposition layers compared to the related one-step deposition layers. Therefore, the highest observed θw was related to the one of two-step deposition layers due to the creation of small octahedral structures on the surface, having narrow and deep valleys. However, there was an exception which was due to the resulted big structures and broad valleys on the surface. So, it is possible to engineer different crystallites shapes using the proposed two-step deposition method. It is expected that hydrophobic crystallite thin films can be used in environmental and electronic applications to save energy and materials properties.

Excess Oxygen Defects in Layered Cuprates

DOE R&D Accomplishments Database

Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

1990-09-01

Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Obtention of low oxidation states of copper from Cu 2+-Al 3+ layered double hydroxides containing organic sulfonates in the interlayer

NASA Astrophysics Data System (ADS)

Trujillano, Raquel; Holgado, María Jesús; Rives, Vicente

2009-03-01

A series of hydrotalcite-type compounds containing Cu(II) and Al(III) in the layers, and carbonate or different alkylsulfonates in the interlayer, have been prepared and studied. Calcination of these solids gives rise to formation of metallic copper and Cu 2+ and Cu + oxides or sulfates, depending on the calcination temperature and on the precise nature of the interlayer alkylsulfonate.

Universal intrinsic scale of the hole concentration in high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.; Hsieh, H. H.; Tanimoto, M.

2004-12-01

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer Ppl in Y1-xCaxBa2Cu3O6 (Ppl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl , S290(Ppl) , of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl=z) . We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu . We find two characteristic scaling temperatures, TS* and TS2* , in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; lower pseudogap temperature defined by the TS* versus Ppl curve and upper pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high- Tc cuprates, Tc depends on the number of layers, therefore, the inter layer coupling, in each individual system.

Interfacial Reaction and Mechanical Properties of Sn-Bi Solder joints

PubMed Central

Huang, Ying; Zhang, Zhijie

2017-01-01

Sn-Bi solder with different Bi content can realize a low-to-medium-to-high soldering process. To obtain the effect of Bi content in Sn-Bi solder on the microstructure of solder, interfacial behaviors in solder joints with Cu and the joints strength, five Sn-Bi solders including Sn-5Bi and Sn-15Bi solid solution, Sn-30Bi and Sn-45Bi hypoeutectic and Sn-58Bi eutectic were selected in this work. The microstructure, interfacial reaction under soldering and subsequent aging and the shear properties of Sn-Bi solder joints were studied. Bi content in Sn-Bi solder had an obvious effect on the microstructure and the distribution of Bi phases. Solid solution Sn-Bi solder was composed of the β-Sn phases embedded with fine Bi particles, while hypoeutectic Sn-Bi solder was composed of the primary β-Sn phases and Sn-Bi eutectic structure from networked Sn and Bi phases, and eutectic Sn-Bi solder was mainly composed of a eutectic structure from short striped Sn and Bi phases. During soldering with Cu, the increase on Bi content in Sn-Bi solder slightly increased the interfacial Cu6Sn5 intermetallic compound (IMC)thickness, gradually flattened the IMC morphology, and promoted the accumulation of more Bi atoms to interfacial Cu6Sn5 IMC. During the subsequent aging, the growth rate of the IMC layer at the interface of Sn-Bi solder/Cu rapidly increased from solid solution Sn-Bi solder to hypoeutectic Sn-Bi solder, and then slightly decreased for Sn-58Bi solder joints. The accumulation of Bi atoms at the interface promoted the rapid growth of interfacial Cu6Sn5 IMC layer in hypoeutectic or eutectic Sn-Bi solder through blocking the formation of Cu6Sn5 in solder matrix and the transition from Cu6Sn5 to Cu3Sn. Ball shear tests on Sn-Bi as-soldered joints showed that the increase of Bi content in Sn-Bi deteriorated the shear strength of solder joints. The addition of Bi into Sn solder was also inclined to produce brittle morphology with interfacial fracture, which suggests that the addition of Bi increased the shear resistance strength of Sn-Bi solder. PMID:28792440

Performance of nanoscale metallic multilayer systems under mechanical and thermal loading

NASA Astrophysics Data System (ADS)

Economy, David Ross

Reports of nanoscale metallic multilayers (NMM) performance show a relatively high strength and radiation damage resistance when compared their monolithic components. Hardness of NMMs has been shown to increase with increasing interfacial density (i.e. decreasing layer thickness). This interface density-dependent behavior within NMMs has been shown to deviate from Hall-Petch strengthening, leading to higher measured strengths during normal loading than those predicted by a rule of mixtures. To fully understand why this occurs, other researchers have looked at the influence of the crystal structures of the component layers, orientations, and compositions on deformation processes. Additionally, a limited number of studies have focused on the structural stability and possible performance variation between as-deposited systems and those exposed to mechanical and thermal loading. This dissertation identified how NMM as-deposited structures and performance are altered by mechanical loading (sliding/wear contact) and/or thermal (such as diffusion, relaxation) loading. These objectives were pursued by tracking hardness evolution during sliding wear and after thermal loading to as-deposited stress and mechanical properties. Residual stress progression was also examined during thermal loading and supporting data was collected to detail structural and chemical changes. All of these experimental observations were conducted using Cu/Nb NMMs with 2 nm, 20 nm, or 100 nm thick individual layers deposited with either 1 microm or 10 microm total thicknesses with two geometries (Cu/Nb and Nb/Cu) on (100) Si. Wear boxes were performed on Cu/Nb NMM using a nanoindentation system with a 1 microm conical diamond counterface. After nano-wear deformation, the hardness of the deformed regions significantly rose with respect to as-deposited measurements, which further increased with greater wear loads. Additionally, NMMs with thinner layers showed less volume loss as measured by laser scanning microscopy. Strain hardening exponents for multilayers with thinner layers (2 nm: n ≈ 0.018 and 20 nm: n ≈ 0.022 respectively) were less than was determined for 100 nm systems (n ≈ 0.041). These results suggest that single-dislocation based deformation mechanisms observed for the thinner systems limit the extent of achievable strain hardening. This result indicates that both architecture strengthening and strain hardening should be considered if the coating will undergo sliding wear. Furthermore, the hardness of the worn 100 nm system was observed to exceed the as-deposited hardness of the 20 nm, a previously unreported finding, further indicating the interplay between the architecture- and strain-based strengthening mechanisms. Residual stress has been identified as a potential mechanism to cause microstructural instability in NMM architectures. To understand the factors controlling thermal stress evolution for NMMs, the stress in Cu-Nb NMM systems was determined from curvature measurements collected as the sample was cycled from 25°C to 400°C. In addition, the stress within each of the component layers was assessed by using changes in primary peak position from X-ray diffraction (XRD). The thermoelastic slope of NMM systems was shown to not only depend on thermal expansion mismatch and elastic modulus. Analysis showed that layer thickness (interfacial density) affected the magnitude of thermoelastic slope while the layer order was observed to have minimal impact on the stress-response after the initial heating segment. When comparing the monolithic stress responses to those of the Cu-Nb NMM systems, the NMMs show a similar increase in stress magnitude above 200°C to monolithic Nb. This indicates that the Nb layers play a larger role in the development of initial stresses than the Cu layers. Localized stress measurements using in-situ XRD revealed that the stress response of the Cu and Nb layers within the NMM behave similarly to their monolithic counterparts by themselves, rather than the composite stress estimate from curvature measurements. Although FCC Nb has been identified under very specific contexts (e.g. due to initial deposition conditions, appreciable impurity content), the transformation of pure Nb from BCC to FCC has not been previously observed. Through this work we identified that stress is a possible mechanism that allows this transformation to occur. During heating to 500°C, a sharp peak in the stress response of 1 microm monolithic Nb was observed at 475°C. Post-heating determination of structure revealed both the initial BCC orientation as well as peaks that coincide with a previously simulated FCC Nb structure. Due to the observation of both structures concurrently, the observed transformation did not progress to completion. The transformation coincided with an increase in the elastic modulus from 115 +/- 4 GPa to 153 +/- 4 GPa, another indication of a structural change within the Nb film. These findings have not been previously observed for pure Nb and are being further confirmed with high-resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD).

Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

PubMed Central

Hsu, Chih-Hung; Chen, Lung-Chien; Lin, Yi-Feng

2013-01-01

This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas. PMID:28788341

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Influence of Substrate, Additives, and Pulse Parameters on Electrodeposition of Gold Nanoparticles from Potassium Dicyanoaurate

NASA Astrophysics Data System (ADS)

Vahdatkhah, Parisa; Sadrnezhaad, Sayed Khatiboleslam

2015-12-01

Gold nanoparticles (AuNPs) of less than 50 nm diameter were electrodeposited from cyanide solution by pulsating electric current on modified copper and indium tin oxide (ITO) films coated on glass. Morphology, size, and composition of the deposited AuNPs were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscopy. Effects of peak current density, pulse frequency, potassium iodide and cysteine on grain size, and morphology of the AuNPs were determined. Experiments showed that cathode current efficiency increases with the pulse frequency and the iodide ion. Size of the AuNPs increased with the current density. The number of nucleation sites was larger on ITO than on Cu layer; while the average diameter of the crystallites on ITO was smaller than on Cu layer.

TEM Analysis of Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers

NASA Technical Reports Server (NTRS)

Ozaki, T.; Hasegawa, Y.; Tsuda, H.; Mori, S.; Halbig, M. C.; Asthana, R.; Singh, M.

2017-01-01

SiC fiber-bonded ceramics (SA-Tyrannohex: SA-THX) diffusion-bonded with TiCu metallic interlayers were investigated. Thin samples of the ceramics were prepared with a focused ion beam (FIB) and the interfacial microstructure of the prepared samples was studied by transmission electron microscopy (TEM) and scanning TEM (STEM). In addition to conventional microstructure observation, for detailed analysis of reaction compounds in diffusion-bonded area, we performed STEM-EDS measurements and selected area electron diffraction (SAD) experiments. The TEM and STEM experiments revealed the diffusion-bonded area was composed of only one reaction layer, which was characterized by TiC precipitates in Cu-Si compound matrix. This reaction layer was in good contact with the SA-THX substrates, and it is concluded that the joint structure led to the excellent bonding strength.

Energetics and crystal chemistry of Ruddlesden-Popper type structures in high T(sub c) ceramic superconductors

NASA Technical Reports Server (NTRS)

Dwivedi, Anurag; Cormack, A. N.

1990-01-01

The formation of Ruddlesden-Popper type layers (alternating slabs of rocksalt and perovskite structures) is seen in these oxides which is similar in many respects to what is seen in the system Sr-Ti-O. However, it was observed that there are some significant differences, for example the rocksalt and perovskite blocks in new superconducting compounds are not necessarily electrically, unlike in Sr-Ti-O systems. This will certainly render an additional coulombic bonding energy between two different types of blocks and may well lead to significant differences in their structural chemistry. In the higher order members of the various homologous series, additional Cu-O planes are inserted in the perovskite blocks. In order for the unit cell to electrically neutral the net positive charge on rocksalt block (which remains constant throughout the homologous series) should be balanced by an equal negative charge on perovskite block. It, thus becomes necessary to create oxygen vacancies in the basic perovskite structure, when width of the perovskite slab changes on addition of extra Cu-O planes. Results of atomistic simulations suggest that these missing oxygen ions allow the Cu-O planes to buckle in these compounds. This is also supported by the absence of buckling in the first member of Bi-containing compounds in which there are no missing oxygen ions and the Sr-Ti-O series of compounds. Additional results are presented on the phase stability of polytypoid structures in these crystal chemically complex systems. The studies will focus on the determination of the location of Cu(3+) in the structures of higher order members of the La-Cu-O system and whether Cu(3+) ions or oxygen vacancies are energetically more favorable charge compensating mechanism.

Fabrication and Characterization of High Strength Al-Cu Alloys Processed Using Laser Beam Melting in Metal Powder Bed

NASA Astrophysics Data System (ADS)

Ahuja, Bhrigu; Karg, Michael; Nagulin, Konstantin Yu.; Schmidt, Michael

The proposed paper illustrates fabrication and characterization of high strength Aluminium Copper alloys processed using Laser Beam Melting process. Al-Cu alloys EN AW-2219 and EN AW-2618 are classified as wrought alloys and 2618 is typically considered difficult to weld. Laser Beam Melting (LBM) process from the family of Additive Manufacturing processes, has the unique ability to form fully dense complex 3D geometries using micro sized metallic powder in a layer by layer fabrication methodology. LBM process can most closely be associated to the conventional laser welding process, but has significant differences in terms of the typical laser intensities and scan speeds used. Due to the use of high intensities and fast scan speeds, the process induces extremely high heating and cooling rates. This property gives it a unique physical attribute and therefore its ability to process high strength Al-Cu alloys needs to be investigated. Experiments conducted during the investigations associate the induced energy density controlled by varying process parameters to the achieved relative densities of the fabricated 3D structures.

Electronic and energetics properties of oxygen defects in La2-xSrxCuO4 in relation to doping and strain

NASA Astrophysics Data System (ADS)

Park, Sohee; Park, Changwon; Yoon, Mina

The level of oxygen defects in La2-xSrxCuO4 (LSCO), a high temperature superconductor, is known to drastically change LSCO's structural and electronic properties. However, the atomistic understanding of the role of oxygen defects is far from being complete. Using first-principles calculations, we investigated the electronic and energetic properties of oxygen vacancies in LSCO in relation to external parameters such as degree of Sr doping amount and external strain. We find that the relative stabilities between the equatorial vacancy induced in the CuO2 layer and the apical vacancy in the LaO layer can be altered by strain. In addition, Sr doping plays a crucial role in their relative stabilities. Therefore, the complex interplay between those key parameters essentially determines the overall oxygen density. Our finding can be instrumental in the experimental development of LSCO with desired oxygen density. Work supported by the LDRD Program of ORNL managed by UT-Battle, LLC, for the U.S. DOE.

Single reconstructed Fermi surface pocket in an underdoped single-layer cuprate superconductor

DOE PAGES

Chan, Mun Keat; Harrison, Neil; Mcdonald, Ross David; ...

2016-07-22

The observation of a reconstructed Fermi surface via quantum oscillations in hole-doped cuprates opened a path towards identifying broken symmetry states in the pseudogap regime. However, such an identification has remained inconclusive due to the multi-frequency quantum oscillation spectra and complications accounting for bilayer effects in most studies. We overcome these impediments with high-resolution measurements on the structurally simpler cuprate HgBa2CuO4+δ (Hg1201), which features one CuO2 plane per primitive unit cell. We find only a single oscillatory component with no signatures of magnetic breakdown tunnelling to additional orbits. Therefore, the Fermi surface comprises a single quasi-two-dimensional pocket. Quantitative modelling ofmore » these results indicates that a biaxial charge density wave within each CuO2 plane is responsible for the reconstruction and rules out criss-crossed charge stripes between layers as a viable alternative in Hg1201. Lastly, we determine that the characteristic gap between reconstructed pockets is a significant fraction of the pseudogap energy« less

Spray- and spin-assisted layer-by-layer assembly of copper nanoparticles on thin-film composite reverse osmosis membrane for biofouling mitigation.

PubMed

Ma, Wen; Soroush, Adel; Van Anh Luong, Tran; Brennan, Gregory; Rahaman, Md Saifur; Asadishad, Bahareh; Tufenkji, Nathalie

2016-08-01

Copper nanoparticles (CuNPs) have long been considered as highly effective biocides; however, the lack of suitable methods for loading CuNPs onto polymeric membranes is recognized as being one of the primary reasons for the limited research concerning their application in membrane industries. A highly efficient spray- and spin-assisted layer-by-layer (SSLbL) method was developed to functionalize the TFC polyamide RO membranes with controllable loading of CuNPs for biofouling control. The SSLbL method was able to produce a uniform bilayer of polyethyleneimine-coated CuNPs and poly(acrylic) acid in less than 1 min, which is far more efficient than the traditional dipping approach (25-60 min). The successful loading of CuNPs onto the membrane surface was confirmed by XPS analysis. Increasing the number of bilayers from 2 to 10 led to an increased quantity of CuNPs on the membrane surface, from 1.75 to 23.7 μg cm(-2). Multi-layer coating exhibited minor impact on the membrane water permeation flux (13.3% reduction) while retaining the original salt rejection ability. Both static bacterial inactivation and cross-flow filtration tests demonstrated that CuNPs could significantly improve anti-biofouling property of a polyamide membrane and effectively inhibit the permeate flux reduction caused by bacterial deposition on the membrane surface. Once depleted, CuNPs can also be potentially regenerated on the membrane surface via the same SSLbL method. Copyright © 2016 Elsevier Ltd. All rights reserved.

Detailed line shape analysis of the C KVV Auger peak of two carbon allotropes measured using a time of flight positron annihilation induced Auger electron spectrometer

NASA Astrophysics Data System (ADS)

Fairchild, A. J.; Chirayath, V. A.; Chrysler, M. D.; Gladen, R. W.; Imam, S. K.; Koymen, A. R.; Weiss, A. H.

We report a detailed line shape analysis of the positron induced C KVV Auger line shape from highly oriented pyrolytic graphite (HOPG) and a single layer of graphene grown on polycrystalline Cu. A model consisting of the self-fold of the one-electron density of states including terms for hole-hole interactions, charge screening effects, and intrinsic loss mechanisms is compared to experimental C KVV line shapes measured using a positron induced Auger electron spectrometer (PAES). In traditional Auger spectroscopies which use an electron or photon to initiate the Auger process, extracting the relatively small Auger signal from the large secondary background can be quite difficult. Using a very low energy positron beam to create the core hole through an anti-matter matter annihilation entirely eliminates this background. Additionally, PAES has sensitivity to the top most atomic layer since the positron becomes trapped in an image potential well at the surface before annihilation. Therefore, the PAES signal from a single layer of graphene on polycrystalline Cu is primarily from the graphene overlayer with small contributions from the Cu substrate while the PAES signal from HOPG can be viewed as a single graphene layer with a graphite substrate. The influence of these two substrates on C KVV line shape is discussed. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

Characterization and modeling of microstructural evolution of near-eutectic tin-silver-copper solder joints

NASA Astrophysics Data System (ADS)

Zbrzezny, Adam R.

Near-eutectic Sn-Ag-Cu (SAC) solders are currently considered as major lead-free replacement candidates for Sn-Pb eutectic alloys in microelectronics applications. In this thesis, the microstructural thermal stability including recrystallization, grain growth behavior, Pb and Au contamination effects and interaction of the SAC solder with Cu and Ni substrates were investigated. The true eutectic composition of the Sn-Ag-Cu alloy was verified to be Sn3.5Ag0.9Cu wt.%, and the eutectic melting temperature was determined to be 217.4 +/- 0.8°C. The system was classified as belonging to faceting (Cu6Sn5)-faceting (Ag3Sn)-nonfaceting (Sn matrix) ternary eutectic. The most significant consequence of Pb contamination was the formation of a quaternary eutectic phase (Sn-Ag-Cu-Pb) with a melting point at 176°C. Similarly, the presence of gold in the SAC alloy led to a development of a new quaternary phase (Sn-Ag-Cu-Au) melting at 204°C. Prolonged aging of SAC-4 wt.% Au on nickel resulted in the deposition of a new, previously unreported, intermetallic (IMC) layer, ((Au1-xCUx)6Sn 5, 15 wt.% of Au) on top of the existing (Cu1-yNi y)6Sn5 layer. The interfacial products that formed during soldering to copper were Cu6Sn5 and Cu3Sn. Soldering to nickel resulted in the formation of one layer, (Cu1-yNiy) 6Sn5, which was different from the expected Ni3Sn 4 layer. A small copper content in the SAC solder (0.7 wt.%) was sufficient to promote this thermodynamic shift. Intermetallic growth on Cu during solid state aging was established to be bulk diffusion controlled. The IMC layers in the SAC system grew at a slower rate than in the Sn-Pb system. It was found that the reliability of SAC solder joints on copper was considerably better than on nickel due to copper enrichment during reflow and subsequent Cu6Sn5 intermetallic precipitation. Enhanced copper and silver diffusion followed by tin recrystallization and grain growth, cavity nucleation and subsequent micro-crack linkage formed the framework of a proposed microstructural model of solder degradation mechanisms under cyclic creep conditions. A multilayer diffusion model of the SAC/Cu couple was proposed and employed for predicting intermetallic layer growth kinetics. In general, the calculated IMC thicknesses for short and intermediate aging times were in reasonable agreement with the experimental data.

Effect of processing parameters on the formation of C{sub f}/LAS composites/Ag−Cu−Ti/TC4 brazed joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Duo; Niu, Hongwei

C{sub f}/LAS composites were successfully jointed to TC4 alloy with Ag−Cu−Ti filler by vacuum brazing. The interfacial microstructure of TC4/C{sub f}/LAS composites joints was characterized by employing scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-diffraction (XRD) and transmission electron microscopy (TEM). The determination of the thin interfacial reaction layer (TiSi{sub 2} + TiC layer) was realized by TEM. The effect of holding time on the interfacial microstructure and shear strength were investigated. With the increasing holding time, the thickness of diffusion layer, Ti{sub 3}Cu{sub 4} layer, and TiSi{sub 2} + TiC layer increased obviously, on the contrary, that ofmore » Ti−Cu intermetallic compound layers decreased gradually. Besides, blocky Ti{sub 3}Cu{sub 4} phase was coarsened when the joint was brazed at 890 °C for 20 min, which deteriorated the mechanical properties of the joint dramatically. The interfacial evolution of TC4/C{sub f}/LAS composites joint and the formation of TiSi{sub 2}, TiC, Ti{sub 3}Cu{sub 4}, TiCu and Ti{sub 2}Cu phases were expounded. The maximum shear strength of 26.4 MPa was obtained when brazed at 890 °C for 10 min. - Highlights: •The thin interface reaction layer was determined to be TiSi{sub 2} + TiC layer by TEM. •Holding time had influence on the interfacial microstructure and joint properties. •Microstructural evolution mechanism and reactions of brazed joints were expounded.« less

Use of π-π forces to steer the assembly of a NTA complex of Cu(II) into hydrogen bonded supramolecular layers (H 3NTA = nitrilotriacetic acid)

NASA Astrophysics Data System (ADS)

Dey, Biswajit; Choudhury, Somnath Ray; Suresh, Eringathodi; Jana, Atish Dipankar; Mukhopadhyay, Subrata

2009-03-01

We propose a crystal engineering principle where we show that it might be possible to direct the organization of molecular complexes into hydrogen bonded supramolecular layers through the use of suitable co-ligands possessing both the hydrogen-bonding as well as π-π stacking capability. This principle has been tested for the organization of [Cu(NTA) 2] units (H 3NTA = nitrilotriacetic acid, N(CH 2CO 2H) 3) in the molecular complex with formula (2-A-PH) 4[Cu(NTA) 2]·6H 2O ( 1), where 2-A-PH is protonated 2-amino-4-picoline. In 1, the 2-amino-4-picoline co-ligands have been utilized to direct the organization of [Cu(NTA) 2] units into hydrogen bonded layers. The linear stacking of π-π bonded protonated 2-amino-4-picoline molecules can be thought as the influencing agent for the organization of [Cu(NTA) 2] units into hydrogen bonded layers.

Soft-template-synthesis of hollow CuO/Co3O4 composites for pseudo-capacitive electrode: A synergetic effect on electrochemical performance

NASA Astrophysics Data System (ADS)

Wang, Kuaibing; Lv, Bo; Wu, Hua; Luo, Xuefei; Xu, Jiangyan; Geng, Zhirong

2016-12-01

Hollow CuO/Co3O4 hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co3O4 hybrids had higher capacitance and lower charge transfer resistance than bare Co3O4 nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitance of the CuO/Co3O4 hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g-1 and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s-1.

Electromigration in epitaxial Cu(001) lines

NASA Astrophysics Data System (ADS)

Ramanath, G.; Kim, H.; Goindi, H. S.; Frederick, M. J.; Shin, C.-S.; Goswami, R.; Petrov, I.; Greene, J. E.

2002-04-01

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ˜0.8-1.2 eV, and that of Cu on Ta is ˜0.2 eV, for 200-300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3-4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films.

Transformation of CuO Nanoparticles in the Aquatic Environment: Influence of pH, Electrolytes and Natural Organic Matter

PubMed Central

Peng, Cheng; Shen, Chensi; Zheng, Siyuan; Yang, Weiling; Hu, Hang; Liu, Jianshe; Shi, Jiyan

2017-01-01

Many studies have shown the effect of solution chemistry on the environmental behavior of metal-based nanoparticles (NPs), except CuO NPs. Here, we investigated the agglomeration, sedimentation, dissolution, and speciation of CuO NPs by varying pH, ionic strength, ionic valence, and natural organic matter (NOM). The results showed that as the pH moved away from 6, the size of CuO agglomerates decreased, along with the enhanced NP suspension stabilization, due to the increase of electrostatic repulsive force. Increasing ionic strength and valence intensified the agglomeration and sedimentation of CuO NPs because of the compression of electrical double layers. The presence of humic acid and citric acid enhanced the dispersion and stabilization of CuO NP suspension, but l-cysteine showed a different impact. Decreasing pH, increasing ionic strength and all NOM improved the dissolution of CuO NPs, but the divalent electrolyte (CaCl2) inhibited the Cu2+ release from CuO NPs compared to the monovalent electrolyte (NaCl). In addition, X-ray absorption near edge structure (XANES) analysis demonstrated that the presence of l-cysteine transformed more than 30% of CuO NPs to Cu(I)-cysteine by coordinating with thiol group. This study can give us an in-depth understanding on the environmental behavior and fate of CuO NPs in the aquatic environment. PMID:29036921

Effects of High-Temperature Treatment on the Reaction Between Sn-3%Ag-0.5%Cu Solder and Sputtered Ni-V Film on Ferrite Substrate

NASA Astrophysics Data System (ADS)

Shen, Xiaohu; Jin, Hao; Dong, Shurong; Wong, Hei; Zhou, Jian; Guo, Zhaodi; Wang, Demiao

2012-11-01

We have demonstrated a novel sputtering method for lead-free thin metal films on ferrite substrates for surface-mount inductor applications. In a surface-mounting process, the cladding of enameled wire needs to be burnt off at high temperature, which requires the devices to withstand a high-temperature reliability test at 420°C for 10 s. There are no reports that a sputtered film of thickness less than 6 μm can withstand this test. In this work, we used Ag/Ni-7 wt.%V double metal layers for the metallization. The dissolution of Ni-7 wt.%V in Sn-3%Ag-0.5%Cu lead-free solder at various temperatures was studied in detail. Scanning electron microscopy with energy-dispersive x-ray spectroscopy was used to investigate the interfacial reaction between the sputtered films and the solder. The intermetallic compounds are mainly (Cu,Ni)6Sn5 at 250°C; however, (Ni,Cu)3Sn4 becomes the predominant composition at 420°C. In addition, although outdiffusion of V atoms from the Ni-V layer was observed, its effect on the intermetallic compound (IMC) was insignificant. We further confirmed that the proposed metallization is able to pass the aforementioned high-temperature reliability test.

Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates

NASA Astrophysics Data System (ADS)

Lucas, F. O.; O'Reilly, L.; Natarajan, G.; McNally, P. J.; Daniels, S.; Taylor, D. M.; William, S.; Cameron, D. C.; Bradley, A. L.; Miltra, A.

2006-01-01

γ-CuCl semiconductor material has been identified as a candidate material for the fabrication of blue-UV optoelectronic devices on Si substrates due to its outstanding electronic, lattice and optical properties. However, CuCl thin films oxidise completely into oxyhalides of Cu II within a few days of exposure to air. Conventional encapsulation of thin γ-CuCl by sealed glass at a deposition/curing temperature greater than 250 °C cannot be used because CuCl interacts chemically with Si substrates when heated above that temperature. In this study we have investigated the behaviour of three candidate dielectric materials for use as protective layers for the heteroepitaxial growth of γ-CuCl on Si substrates: SiO 2 deposited by plasma-enhanced chemical vapour deposition (PECVD), organic polysilsesquioxane-based spin on glass material (PSSQ) and cyclo olefin copolymer (COC) thermoplastic-based material. The optical properties (UV/Vis and IR) of the capped luminescent CuCl films were studied as a function of time, up to 28 days and compared with bare uncapped films. The results clearly show the efficiency of the protective layers. Both COC and the PSSQ layer prevented CuCl film from oxidising while SiO 2 delayed the effect of oxidation. The dielectric constant of the three protective layers was evaluated at 1 MHz to be 2.3, 3.6 and 6.9 for C0C, SiO 2 and PSSQ, respectively.

Kinetics of Isothermal Reactive Diffusion Between Solid Cu and Liquid Sn

NASA Astrophysics Data System (ADS)

O, M.; Suzuki, T.; Kajihara, M.

2018-01-01

The Cu/Sn system is one of the most fundamental and important metallic systems for solder joints in electric devices. To realize reliable solder joints, information on reactive diffusion at the solder joint is very important. In the present study, we experimentally investigated the kinetics of the reactive diffusion between solid Cu and liquid Sn using semi-infinite Cu/Sn diffusion couples prepared by an isothermal bonding technique. Isothermal annealing of the diffusion couple was conducted in the temperature range of 533-603 K for various times up to 172.8 ks (48 h). Using annealing, an intermetallic layer composed of Cu6Sn5 with scallop morphology and Cu3Sn with rather uniform thickness is formed at the original Cu/Sn interface in the diffusion couple. The growth of the Cu6Sn5 scallop occurs much more quickly than that of the Cu3Sn layer and thus predominates in the overall growth of the intermetallic layer. This tendency becomes more remarkable at lower annealing temperatures. The total thickness of the intermetallic layer is proportional to a power function of the annealing time, and the exponent of the power function is close to unity at all the annealing temperatures. This means that volume diffusion controls the intermetallic growth and the morphology of the Cu6Sn5/Sn interface influences the rate-controlling process. Adopting a mean value of 0.99 for the exponent, we obtain a value of 26 kJ/mol for the activation enthalpy of the intermetallic growth.

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj

2016-09-05

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route ofmore » high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.« less

Electrochemical performance of Ni0.8Cu0.2/Ce0.8Gd0.2O1.9 cermet anodes with functionally graded structures for intermediate-temperature solid oxide fuel cell fueled with syngas

NASA Astrophysics Data System (ADS)

Miyake, Michihiro; Iwami, Makoto; Takeuchi, Mizue; Nishimoto, Shunsuke; Kameshima, Yoshikazu

2018-06-01

The electrochemical performance of layered Ni0.8Cu0.2/Ce0.8Gd0.2O1.9 (GDC) cermet anodes is investigated for intermediate-temperature solid oxide fuel cells (IT-SOFCs) at 600 °C using humidified (3% H2O) model syngas with a molar ratio of H2/CO = 3/2 as the fuel. From the results obtained, the electrochemical performance of the functionally graded multi-layered anodes is found to be superior to the mono-layered anodes. The test cell with a bi-layered anode consisting of 100 mass% Ni0.8Cu0.2/0 mass% GDC (10M/0E) and 70 mass% Ni0.8Cu0.2/30 mass% GDC (7M/3E) exhibits high power density. The test cell with a tri-layered anode consisting of 10M/0E, 7M/3E, and 50 mass% Ni0.8Cu0.2/50 mass% GDC (5M/5E) exhibits an even higher power density, suggesting that 10M/0E and 5M/5E layers contribute to the current collecting part and active part, respectively.

Preparation and characterization of CuInS2 absorber layers by sol-gel method for solar cell applications

NASA Astrophysics Data System (ADS)

Amerioun, M. H.; Ghazi, M. E.; Izadifard, M.; Bahramian, B.

2016-04-01

CuInSe2 , CuInS2 ( CIS2 and CuInGaS2 alloys and their compounds with band gaps between 1.05 and 1.7eV are absorbance materials based on chalcopyrite, in which, because of their suitable direct band gap, high absorbance coefficient and short carrier diffusion are used as absorbance layers in solar cells. In this work, the effects of decrease in p H and thickness variation on characteristics of the CIS2 absorber layers, grown by spin coating on glass substrates, are investigated. Furthermore by using thiourea as a sulphur source in solvent, the sulfurization of layers was done easier than other sulfurization methods. Due to the difficulty in dissolving thiourea in the considered solvent that leads to a fast deposition during the dissolving process, precise conditions are employed in order to prepare the solution. In fact, this procedure can facilitate the sulfurization process of CuIn layers. The results obtained from this investigation indicate reductions in absorbance and band gap in the visible region of the spectrum as a result of decrease in p H. Finally, conductivity of layers is studied by the current vs. voltage curve that represents reduction of electrical resistance with decrease and increase in p H and thickness, respectively.

Synthesis of Copper-Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells.

PubMed

Suehiro, Satoshi; Horita, Keisuke; Yuasa, Masayoshi; Tanaka, Tooru; Fujita, Katsuhiko; Ishiwata, Yoichi; Shimanoe, Kengo; Kida, Tetsuya

2015-08-17

The p-type nanocrystals (NCs) of copper-based chalcogenides, such as CuInSe2 and Cu2ZnSnS4, have attracted increasing attention in photovoltaic applications due to their potential to produce cheap solution-processed solar cells. Herein, we report the synthesis of copper-antimony-sulfide (CAS) NCs with different crystal phases including CuSbS2, Cu3SbS4, and Cu12Sb4S13. In addition, their morphology, crystal phase, and optical properties were characterized using transmission electron microscopy, X-ray diffractometry, UV-vis-near-IR spectroscopy, and photoemission yield spectroscopy. The morphology, crystal phase, and electronic structure were significantly dependent on the chemical composition in the CAS system. Devices were fabricated using particulate films consisting of CAS NCs prepared by spin coating without a high-temperature treatment. The CAS NC-based devices exhibited a diode-like current-voltage characteristic when coupled with an n-type CdS layer. In particular, the CuSbS2 NC devices exhibited photovoltaic responses under simulated sunlight, demonstrating its applicability for use in solution-processed solar cells.

Growth of periodic nano-layers of nano-crystals of Au, Ag, Cu by ion beam

NASA Technical Reports Server (NTRS)

Smith, Cydale C.; Zheng, B.; Muntele, C. I.; Muntele, I. C.; Ila, D.

2005-01-01

Multilayered thin films of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/, were grown by deposition. We have previously shown that MeV ion Bombardment of multi-nano-layers of SiO2/AU+ SiO2/ produces Au nanocrystals in the AU+ SiO2 layers. An increased number of nano-layers followed by MeV ion bombardment produces a wide optical absorption band, of which its FWHM depends on the number of nano-layers of SiO2/AU+ SiO2/. We have successfully repeated this process for nano-layers of SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/. In this work we used 5 MeV Si as the post deposition bombardment ion and monitored the location as well as the optical absorption's FWHM for each layered structure using Optical Absorption Photospectrometry. The concentration and location of the metal nano-crystals were measured by Rutherford Backscattering Spectrometry. We will report on the results obtained for nano-layered structures produced by post deposition bombardment of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/ layered systems as well as the results obtained from a system containing a periodic combination of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/.

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to the presence of an epitaxial relationship between Cu (111) and beta-Ta (002) planes. After annealing, the difference was only seen in films thinner than 60 nm. Results were confirmed when Cu film resistance was measured in-situ during deposition on each phase of Ta liner. Serpentine interconnect line structures of various line widths and aspect ratios were fabricated using either alpha- or beta-Ta liners, and subjected to a similar heat treatment. Results showed a similar ˜10% lower resistivity in the thinnest interconnects (˜40 nm) when a beta-Ta liner was used.

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

PubMed Central

Avancini, Enrico; Losio, Paolo A.; Figi, Renato; Schreiner, Claudia; Bürki, Melanie; Bourgeois, Emilie; Remes, Zdenek; Nesladek, Milos; Tiwari, Ayodhya N.

2018-01-01

Abstract Cu(In,Ga)Se2 based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se2 solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se2 does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances. PMID:29785230

Intermetallic Compound Growth between Electroless Nickel/Electroless Palladium/Immersion Gold Surface Finish and Sn-3.5Ag or Sn-3.0Ag-0.5Cu Solder

NASA Astrophysics Data System (ADS)

Oda, Yukinori; Fukumuro, Naoki; Yae, Shinji

2018-04-01

Using an electroless nickel/electroless palladium/immersion gold (ENEPIG) surface finish with a thick palladium-phosphorus (Pd-P) layer of 1 μm, the intermetallic compound (IMC) growth between the ENEPIG surface finish and lead-free solders Sn-3.5Ag (SA) or Sn-3.0Ag-0.5Cu (SAC) after reflow soldering and during solid-state aging at 150°C was investigated. After reflow soldering, in the SA/ENEPIG and SAC/ENEPIG interfaces, thick PdSn4 layers of about 2 μm to 3 μm formed on the residual Pd-P layers ( 0.5 μm thick). On the SA/ENEPIG interface, Sn was detected on the upper side of the residual Pd-P layer. On the SAC/ENEPIG interface, no Sn was detected in the residual Pd-P layer, and Cu was detected in the interface between the Pd-P and PdSn4 layers. After 300 h of aging at 150°C, the residual Pd-P layers had diffused completely into the solders. In the SA/ENEPIG interface, an IMC layer consisting of Ni3Sn4 and Ni3SnP formed between the PdSn4 layer and the nickel-phosphorus (Ni-P) layer, and a (Pd,Ni)Sn4 layer formed on the lower side of the PdSn4 layer. On the SAC/ENEPIG interface, a much thinner (Pd,Ni)Sn4 layer was observed, and a (Cu,Ni)6Sn5 layer was observed between the PdSn4 and Ni-P layers. These results indicate that Ni diffusion from the Ni-P layer to the PdSn4 layer produced a thick (Pd,Ni)Sn4 layer in the SA solder case, but was prevented by formation of (Cu,Ni)6Sn5 in the SAC solder case. This causes the difference in solder joint reliability between SA/ENEPIG and SAC/ENEPIG interfaces in common, thin Pd-P layer cases.

Effect of Isothermal Aging and Thermal Cycling on Interfacial IMC Growth and Fracture Behavior of SnAgCu/Cu Joints

NASA Astrophysics Data System (ADS)

Li, Xiaoyan; Li, Fenghui; Guo, Fu; Shi, Yaowu

2011-01-01

The growth behavior of interfacial intermetallic compounds (IMCs) of SnAgCu/Cu soldered joints was investigated during the reflow process, isothermal aging, and thermal cycling with a focus on the influence of these parameters on growth kinetics. The SnAgCu/Cu soldered joints were isothermally aged at 125°C, 150°C, and 175°C while the thermal cycling was performed within the temperature ranges from -25°C to 125°C and -40°C to 125°C. It was observed that a Cu6Sn5 layer formed, followed by rapid coarsening at the solder/Cu interface during reflowing. The grain size of the interfacial Cu6Sn5 was found to increase with aging time, and the morphology evolved from scallop-like to needle-like to rod-like and finally to particles. The rod-like Ag3Sn phase was formed on the solder side in front of the previously formed Cu6Sn5 layer. However, when subject to an increase of the aging time, the Cu3Sn phase was formed at the interface of the Cu6Sn5 layer and Cu substrate. The IMC growth rate increased with aging temperature for isothermally aged joints. During thermal cycling, the thickness of the IMC layer was found to increase with the number of thermal cycles, although the growth rate was slower than that for isothermal aging. The dwell time at the high-temperature end of the thermal cycles was found to significantly influence the growth rate of the IMCs. The growth of the IMCs, for both isothermal aging and thermal cycling, was found to be Arrhenius with aging temperature, and the corresponding diffusion factor and activation energy were obtained by data fitting. The tensile strength of the soldered joints decreased with increasing aging time. Consequently, the fracture site of the soldered joints migrated from the solder matrix to the interfacial Cu6Sn5 layer. Finally, the shear strength of the joints was found to decrease with both an increase in the number of thermal cycles and a decrease in the dwell temperature at the low end of the thermal cycle.

Method to grow group III-nitrides on copper using passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

PubMed

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be unsuitable as a barrier layer for the growth of rm YBa _2Cu_3O_{7-x}, on Si since Ba reacted with the si after migrating through the SrTiO_3 layer. For sapphire, no textured growth of SrTiO_3 was observed but it was found to be a suitable barrier layer since it prevented any interaction between Y-Ba-Cu-O films and sapphire substrates.

Ore-forming adakitic porphyry produced by fractional crystallization of oxidized basaltic magmas in a subcrustal chamber (Jiamate, East Junggar, NW China)

NASA Astrophysics Data System (ADS)

Hong, Tao; Xu, Xing-Wang; Gao, Jun; Peters, Stephen G.; Zhang, Di; Jielili, Reyaniguli; Xiang, Peng; Li, Hao; Wu, Chu; You, Jun; Liu, Jie; Ke, Qiang

2018-01-01

Adakitic intrusions are supposed to have a close genetic and spatial relationship to porphyry Cu deposits. However, the genesis of adakitic intrusions is still under dispute. Here, we describe newly discovered intrusive complex rocks, which are composed of ore-bearing, layered magnetite-bearing gabbroic and adakitic rocks in Jiamate, East Junggar, NW China. These Jiamate Complex intrusions have diagnostic petrologic, geochronologic and geochemical signatures that indicate they were all generated from the same oxidized precursor magma source. Additionally, these layered rocks underwent the same fractional crystallization process as the ore-bearing adakitic rocks in the adjacent Kalaxiangar Porphyry Cu Belt (KPCB) in an oceanic island arc (OIA) setting. The rocks studied for this paper include layered magnetite-bearing gabbroic intrusive rocks that contain: (1) gradual contact changes between lithological units of mafic and intermediate rocks, (2) geochemical signatures that are the same as those found in oceanic island arc (OIA) rocks, (3) typical adakitic geochemistry, and (4) similar characteristics and apparent fractional crystallization relationships of ultra-basic to basic rocks to those in the nearby Beitashan Formation and to ore-bearing adakitic rocks in the KPCB. They also display similar zircon U-Pb and zircon Hf model ages. The Jiamate Complex intrusions contain intergrowths of magnetite and layered gabbro, and the intermediate-acidic intrusions of the Complex display typical adakitic affinities. Moreover, in conjunction with previously published geochronological and geochemistry data of the mafic rocks in the Beitashan Formation and in the KPCB area, additional data generated for the Jiamate Complex intrusions rocks indicate that they were formed from fractional crystallization processes. The Jiamate Complex intrusions most likely were derived from a metasomatized mantle wedge that was underplated at the root of the Saur oceanic island arc (Saur OIA). The ore-bearing adakitic intrusions in the KPCB and the adakitic Jiamate Complex intrusions were both probably generated from the same basaltic parental magmas through fractional crystallization. In addition, characteristics of the layered, magnetite-bearing, oxidized, basaltic Jiamate Complex intrusive rocks indicate that they are likely to be the parental arc magmas for the nearby porphyry Cu deposits. This conclusion is based on new interpretations of the regional and local geology, on interpretation of new geochemical analysis, new stable isotope analysis, new geothermobarometry, and new zircon age dating as well as other techniques and interpretations.

Ore-forming adakitic porphyry produced by fractional crystallization of oxidized basaltic magmas in a subcrustal chamber (Jiamate, East Junggar, NW China)

USGS Publications Warehouse

Hong, Tao; Xu, Xing-Wang; Gao, Jun; Peters, Stephen; Zhang, Di; Jielili, Reyaniguli; Xiang, Peng; Li, Hao; Wu, Chu; You, Jun; Liu, Jie; Ke, Qiang

2018-01-01

Adakitic intrusions are supposed to have a close genetic and spatial relationship to porphyry Cu deposits. However, the genesis of adakitic intrusions is still under dispute. Here, we describe newly discovered intrusive complex rocks, which are composed of ore-bearing, layered magnetite-bearing gabbroic and adakitic rocks in Jiamate, East Junggar, NW China. These Jiamate Complex intrusions have diagnostic petrologic, geochronologic and geochemical signatures that indicate they were all generated from the same oxidized precursor magma source. Additionally, these layered rocks underwent the same fractional crystallization process as the ore-bearing adakitic rocks in the adjacent Kalaxiangar Porphyry Cu Belt (KPCB) in an oceanic island arc (OIA) setting. The rocks studied for this paper include layered magnetite-bearing gabbroic intrusive rocks that contain: (1) gradual contact changes between lithological units of mafic and intermediate rocks, (2) geochemical signatures that are the same as those found in oceanic island arc (OIA) rocks, (3) typical adakitic geochemistry, and (4) similar characteristics and apparent fractional crystallization relationships of ultra-basic to basic rocks to those in the nearby Beitashan Formation and to ore-bearing adakitic rocks in the KPCB. They also display similar zircon U-Pb and zircon Hf model ages.The Jiamate Complex intrusions contain intergrowths of magnetite and layered gabbro, and the intermediate-acidic intrusions of the Complex display typical adakitic affinities. Moreover, in conjunction with previously published geochronological and geochemistry data of the mafic rocks in the Beitashan Formation and in the KPCB area, additional data generated for the Jiamate Complex intrusions rocks indicate that they were formed from fractional crystallization processes. The Jiamate Complex intrusions most likely were derived from a metasomatized mantle wedge that was underplated at the root of the Saur oceanic island arc (Saur OIA). The ore-bearing adakitic intrusions in the KPCB and the adakitic Jiamate Complex intrusions were both probably generated from the same basaltic parental magmas through fractional crystallization. In addition, characteristics of the layered, magnetite-bearing, oxidized, basaltic Jiamate Complex intrusive rocks indicate that they are likely to be the parental arc magmas for the nearby porphyry Cu deposits. This conclusion is based on new interpretations of the regional and local geology, on interpretation of new geochemical analysis, new stable isotope analysis, new geothermobarometry, and new zircon age dating as well as other techniques and interpretations.

Fate and Transformation of CuO Nanoparticles in the Soil-Rice System during the Life Cycle of Rice Plants.

PubMed

Peng, Cheng; Xu, Chen; Liu, Qinglin; Sun, Lijuan; Luo, Yongming; Shi, Jiyan

2017-05-02

Agricultural soil is gradually becoming a primary sink for metal-based nanoparticles (MNPs). The uptake and accumulation of MNPs by crops may contaminate food chain and pose unexpected risks for human health. Here, we investigated the fate and transformation of CuO nanoparticles (NPs) in the soil-rice system during the rice lifecycle. The results show that at the maturation stage, 1000 mg/kg CuO NPs significantly decreased redox potential by 202.75 mV but enhanced electrical conductivity by 497.07 mS/cm compared to controls. Moreover, the bioavailability of highest CuO NPs in the soil was reduced by 69.84% along with the plant growth but then was significantly increased by 165% after drying-wetting cycles. Meanwhile, CuO and Cu combined with humic acid were transformed to Cu 2 S and Cu associated with goethite by X-ray absorption near edge structure analysis. Additionally, CuO NPs had an acute negative effect on the plant growth than bulk particles, which dramatically reduced the fresh weight of grains to 6.51% of controls. Notably, CuO NPs were found to be translocated from soil to plant especially to the chaff and promoted the Cu accumulation in the aleurone layer of rice using micro X-ray fluorescence technique, but could not reach the polished rice.

Spray CVD for Making Solar-Cell Absorber Layers

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Harris, Jerry; Jin, Michael H.; Hepp, Aloysius

2007-01-01

Spray chemical vapor deposition (spray CVD) processes of a special type have been investigated for use in making CuInS2 absorber layers of thin-film solar photovoltaic cells from either of two subclasses of precursor compounds: [(PBu3) 2Cu(SEt)2In(SEt)2] or [(PPh3)2Cu(SEt)2 In(SEt)2]. The CuInS2 films produced in the experiments have been characterized by x-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and four-point-probe electrical tests.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Atomic layer epitaxy of YBaCuO for optoelectronic applications

NASA Technical Reports Server (NTRS)

Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

1992-01-01

An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

Structure of Cu/Ni Nanowires Obtained by Matrix Synthesis

NASA Astrophysics Data System (ADS)

Zhigalina, O. M.; Doludenko, I. M.; Khmelenin, D. N.; Zagorskiy, D. L.; Bedin, S. A.; Ivanov, I. M.

2018-05-01

The structure of layered Cu/Ni nanowires obtained by template synthesis in 100-nm channels of track membranes has been investigated by transmission and scanning electron microscopy. The phase composition and main structural features of individual nanowires are determined. It is shown that nanowires consist of alternating Ni ( Fm3m) and Cu ( Fm3m) layers with grains up to 100 nm in size. It is found that nanowires contain also copper oxide crystallites up to 20 nm in size. The elemental composition of individual layers and their mutual arrangement are determined.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Reduced recombination in a surface-sulfurized Cu(InGa)Se2 thin-film solar cell

NASA Astrophysics Data System (ADS)

Kim, Shinho; Nishinaga, Jiro; Kamikawa, Yukiko; Ishizuka, Shogo; Nagai, Takehiko; Koida, Takashi; Tampo, Hitoshi; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-05-01

This study demonstrates surface sulfurization effects on Cu(InGa)Se2 (CIGSe) thin-film solar cells with a single back-graded band gap. Single back-graded CIGSe thin films were prepared via a three-stage process in a high-vacuum molecular beam epitaxial growth chamber and were subsequently annealed in a tube furnace under environmental conditions with H2S gas. After sulfurization, an ∼80- to ∼100-nm-thick CuIn(SSe)2 layer with significantly small Ga contents (CISSe:Ga) was formed on the CIGSe layer. The newly formed CISSe:Ga layer exhibited graded S contents from surface to bulk, thus resulting in a front-graded band gap. In addition, CISSe:Ga was covered with S-enriched CISSe region that was extended from the surface to a depth of a few nm and was depleted of Ga. A device with the sulfurized CIGSe showed reduced recombination at the buffer–absorber interface, in space-charge region and in bulk. Consequently, the open circuit voltage increased from 0.58 V (in the non-sulfurized case) to 0.66 V, and the conversion efficiency improved from 15.5 to 19.4%. This large improvement is caused by the front graded band gap at the surface and the hole-blocking barrier, which suppress recombination at the CdS/CISSe:Ga interface. In addition, sulfurization followed by KF post-deposition treatment (PDT) increased the efficiency to 20.1%. Compared to the untreated sulfurized device, the KF-PDT device delivered an increased carrier lifetime and reduced the recombination in bulk probably because the defects were passivated by the K, which penetrated into the bulk region.

Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface.

PubMed

Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun

2018-03-07

The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cu x -Se 1- x by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cu x -Se 1- x /Al 2 O 3 /Pt device, the optimized Pt/Cu x -Se 1- x /Ln/Al 2 O 3 /Pt devices show improvement in the on/off resistance ratio (10 2 -10 7 ), retention (10 years/85 °C), endurance (∼10 000 cycles), and uniform resistance state distribution.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Modeling Cd and Cu mobility in soils amended by long-term urban waste compost applications

NASA Astrophysics Data System (ADS)

Filipović, Vilim; Cambier, Philippe; Matijević, Lana; Coquet, Yves; Pot, Valérie; Houot, Sabine; Benoit, Pierre

2016-04-01

Urban waste compost application to soil is an effective way for organic waste disposal and at the same time may have a positive effect on various soil rhizosphere processes. However, long term applications of organic waste amendments may lead to a noteworthy accumulation of micropollutants in soil. The long-term field experiment QualiAgro, an INRA-Veolia partnership (https://www6.inra.fr/qualiagro_eng/), has been conducted since 1998 with the objectives to characterize the agronomic value of urban composts and the environmental impacts of their application. Numerical modeling was performed using HYDRUS-2D to estimate the movement of Cd and Cu from compost incroporation in the tilled layer. Experimental plots regularly amended with co-compost of sewage sludge and green wastes (SGW), or a municipal solid waste compost (MSW) have been compared to control plot without any organic amendment (CONT). Field site was equipped with wicks lysimeters, TDR probes and tensiometers in order to determine water balance and trace metal concentrations during a 6 years' time period (2004-2010). In the tilled layer different structures (Δ - compacted clods, Γ - macroporous zone, IF - interfurrows, PP - plough pan) corresponding to the tillage and compost incorporation were delimited and reproduced in a 2-D model. The increase of Cd and Cu concentrations due to each compost addition was assumed to be located in IFs for further modeling. Four compost additions were performed during 2004-2010 period which increased the Cd and Cu concentrations in the IF zones considerably. After successful model description of water flow in highly heterogeneous soil profiles, Cd and Cu were added into the model and their fate was simulated during the same time period. Two approaches were followed to estimate plausible trace metals sorption coefficients (Kd), both while assuming equilibrium between dissolved and EDTA-extractable metals. The first approach was based on Kd estimated from ratios between EDTA and CaCl2-extracted metals (Kd-1). In the second approach we have calculated Kd from generic equations (literature), using soil organic carbon (SOC) and pH for Cd, and SOM, pH and DOC for Cu (Kd-2). Lysimeter data of Cu leaching were successfully reproduced by using first Kd-1 approach for three plots (model efficiency ESGW=0.97, EMSW=0.37; ECONT=0.95). Smaller agreement in MSW plot could be explained by the less stabile organic matter of MSW composts which increased its Cu mobile fraction after soil incorporation. The Cd leaching could be reproduced with the second Kd-2 approach for the two amended plots (ESGW=0.55, EMSW=0.80) while control plot simulations produced poorer fitting (ECONT=-0.57), probably due to an overestimation of the influence of the low pH of that plot on Kd-2(Cd). However, numerical modeling revealed interesting results in which, even with the high values of hydraulic conductivity in the interfurrow zones, the Cd and Cu showed low mobility. Although, the amended plots showed increased metal leaching below the tilled layer in both amended plots, their mobility in the tilled layer is reduced due to retention capacity of the applied composts. Acknowledgements: the involvement of INRA and Veolia members in the QualiAgro experiment and the financial support of Veolia are gratefully acknowledged Keywords: Compost amendments; Soil heterogeneity; Trace metals; Sorption; HYDRUS-2D

Surface structure and chemistry of Pt/Cu/Pt(1 1 1) near surface alloy model catalyst in CO

NASA Astrophysics Data System (ADS)

Zeng, Shibi; Nguyen, Luan; Cheng, Fang; Liu, Lacheng; Yu, Ying; Tao, Franklin (Feng)

2014-11-01

Near surface alloy (NSA) model catalyst Pt/Cu/Pt(1 1 1) was prepared on Pt(1 1 1) through a controlled vapor deposition of Cu atoms. Different coordination environments of Pt atoms of the topmost Pt layer with the underneath Cu atoms in the subsurface result in different local electronic structures of surface Pt atoms. Surface structure and chemistry of the NAS model catalyst in Torr pressure of CO were studied with high pressure scanning tunneling microscopy (HP-STM) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). In Torr pressure of CO, the topmost Pt layer of Pt/Cu/Pt(1 1 1) is restructured to thin nanoclusters with size of about 1 nm. Photoemission feature of O 1s of CO on Pt/Cu/Pt(1 1 1) suggests CO adsorbed on both edge and surface of these formed nanoclusters. This surface is active for CO oxidation. Atomic layers of carbon are formed on Pt/Cu/Pt(1 1 1) at 573 K in 2 Torr of CO.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Ultrathin nickel hydroxide on carbon coated 3D-porous copper structures for high performance supercapacitors.

PubMed

Kang, Kyeong-Nam; Kim, Ik-Hee; Ramadoss, Ananthakumar; Kim, Sun-I; Yoon, Jong-Chul; Jang, Ji-Hyun

2018-01-03

An ultrathin nickel hydroxide layer electrodeposited on a carbon-coated three-dimensional porous copper structure (3D-C/Cu) is suggested as an additive and binder-free conductive electrode with short electron path distances, large electrochemical active sites, and improved structural stability, for high performance supercapacitors. The 3D-porous copper structure (3D-Cu) provides high electrical conductivity and facilitates electron transport between the Ni(OH) 2 active materials and the current collector of the Ni-plate. A carbon coating was applied to the 3D-Cu to prevent the oxidation of Cu, without degrading the electron transport behavior of the 3D-Cu. The 3D-Ni(OH) 2 /C/Cu exhibited a high specific capacitance of 1860 F g -1 at 1 A g -1 , and good cycling performance, with an 86.5% capacitance retention after 10 000 cycles. When tested in a two-electrode system, an asymmetric supercapacitor exhibited an energy density of 147.9 W h kg -1 and a power density of 37.0 kW kg -1 . These results open a new area of ultrahigh-performance supercapacitors, supported by 3D-Cu electrodes.

Coercivity Recovery Effect of Sm-Fe-Cu-Al Alloy on Sm2Fe17N3 Magnet

NASA Astrophysics Data System (ADS)

Otogawa, Kohei; Asahi, Toru; Jinno, Miho; Yamaguchi, Wataru; Takagi, Kenta; Kwon, Hansang

2018-03-01

The potential of a Sm-Fe-Cu-Al binder for improvement of the magnetic properties of Sm2Fe17N3 was examined. Transmission electron microscope (TEM) observation of a Sm-Fe-Cu-Al alloy-bonded Sm2Fe17N3 magnet which showed high coercivity revealed that the Sm-Fe-Cu-Al alloy had an effect of removing the surface oxide layer of the Sm2 Fe17N3 grains. However, the Sm-Fe-Cu-Al binder was contaminated by carbon and nitrogen, which originated from the organic solvent used as the milling medium during pulverization. To prevent carbon and nitrogen contamination, the Sm-Fe- Cu-Al alloy was added directly on the surface of the Sm2Fe17N3 grains by sputtering. Comparing the recovered coercivity per unit amount of the added binder the uncontaminated binder-coated sample had a higher coercivity recovery effect than the milled binder-added sample. These results suggested that sufficient addition of the contamination-free Sm-Fe-Cu-Al binder has the possibility to reduce the amount of binder necessary to produce a high coercive Sm2Fe17N3 magnet.

The General Isothermal Oxidation Behavior of Cu-8Cr-4Nb

NASA Technical Reports Server (NTRS)

Thomas-Ogbuji, L. U.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Oxidation kinetics of Cu-8Cr-4Nb was investigated by TGA (thermogravimetric) exposures between 500 and 900-C (at 25-50 C intervals) and the oxide scale morphologies examined by microscopy and micro-analysis. Because Cu-8Cr-4Nb is comprised of fine Cr2Nb precipitates in a Cu matrix, the results were interpreted by comparison with the behavior of copper (OFHC) and 'NARloy-Z' (a rival candidate material for thrust cell liner applications in advanced rocket engines) under the same conditions. While NARloy-Z and Cu exhibited identical oxidation behavior, Cu-8Cr-4Nb differed markedly in several respects: below approx. 700 C its oxidation rates were significantly lower than those of Cu; At higher temperatures its oxidation rates fell into two categories: an initial rate exceeding that of Cu, and a terminal rate comparable to that of Cu. Differences in oxide morphologies paralleled the kinetic differences at higher temperature: While NARloy-Z and Cu produced a uniform oxide scale of Cu2O inner layer and CuO outer layer, the inner (Cu2O) layer on Cu-8Cr-4Nb was stratified, with a highly porous/spongy inner stratum (responsible for the fast initial kinetics) and a dense/blocky outer stratum (corresponding to the slow terminal kinetics). Single and spinel oxides of Nb and Cr were found at the interface between the oxide scale and Cu-8Cr-4Nb substrate and it appears that these oxides were responsible for its suppressed oxidation rates at the intermediate temperatures. No difference was found between Cu-8Cr-4Nb oxidation in air and in oxygen at 1.0 atm.

Trends and problems in CdS/Cu/x/S thin film solar cells - A review

NASA Astrophysics Data System (ADS)

Martinuzzi, S.

1982-03-01

The methods currently used to fabricate CdS/CuS solar cells are reviewed, along with comparisons of the effects on performance of the various preparation techniques. Attention is given to thermal evaporation, sputter, and chemical spray formation of the CdS layers, noting that most experience is presently with the evaporative and spray processes. CuS layers are formed in dip or wet process chemiplating, electroplating, vacuum deposition in flash and sputter modes, solid state reaction, or spray deposition. Any of the CuS film techniques can be used with any of the CdS layer processes, while spraying and sputtering are noted to offer the best alternatives for industrial production. Band profiles, I-V characteristics, photocurrent levels, and capacitance-voltage characteristics are outlined for the differently formed cells, and CdS/CuS and CdZnS/CuS cells are concluded to exhibit the highest performance features. Areas of improvement necessary to bring the cells to commercial status are discussed.

Solvothermal syntheses and characterization of three new silver(I)/copper(I)-thioarsenates based on As2+/As3+ ions

NASA Astrophysics Data System (ADS)

Yao, Hua-Gang; Tang, Cheng-Fei; An, Yong-Lin; Ou, Zi-Jian; Wu, Guo-Hao; Lan, Pei; Zheng, Yi-Long

2017-02-01

Three new silver(I)/copper(I)-thioarsenates KAgAsIIS2 (1), RbCu2AsIIIS3 (2) and RbCu4AsIIIS4 (3) have been solvothermally synthesized and structurally characterized. 1 exhibits a two-dimensional anionic network built up by As-As bond connecting the left- and right-handed helical [AgS2]4- chains, and represents the first examples of thioarsenates(II). The structure of 2 consists of two kinds of helical [Cu2S3]4- chains linked by the arsenic atoms to form double layers with rubidium ions between the layers. Compound 3 is built up of infinite [Cu2S2]2- chain and layered [Cu6As2S6] linked to form a three-dimensional anionic framework, [Cu4AsS4]-, and containing channels in which the rubidium cations reside. The optical properties of 1-3 have been investigated by UV-vis spectroscopy.

Cryptococcus neoformans Iron-Sulfur Protein Biogenesis Machinery Is a Novel Layer of Protection against Cu Stress.

PubMed

Garcia-Santamarina, Sarela; Uzarska, Marta A; Festa, Richard A; Lill, Roland; Thiele, Dennis J

2017-10-31

Copper (Cu) ions serve as catalytic cofactors to drive key biochemical processes, and yet Cu levels that exceed cellular homeostatic control capacity are toxic. The underlying mechanisms for Cu toxicity are poorly understood. During pulmonary infection by the fungal pathogen Cryptococcus neoformans , host alveolar macrophages compartmentalize Cu to the phagosome, and the ability to detoxify Cu is critical for its survival and virulence. Here, we report that iron-sulfur (Fe-S) clusters are critical targets of Cu toxicity in both Saccharomyces cerevisiae and C. neoformans in a manner that depends on the accessibility of Cu to the Fe-S cofactor. To respond to this Cu-dependent Fe-S stress, C. neoformans induces the transcription of mitochondrial ABC transporter Atm1, which functions in cytosolic-nuclear Fe-S protein biogenesis in response to Cu and in a manner dependent on the Cu metalloregulatory transcription factor Cuf1. As Atm1 functions in exporting an Fe-S precursor from the mitochondrial matrix to the cytosol, C. neoformans cells depleted for Atm1 are sensitive to Cu even while the Cu-detoxifying metallothionein proteins are highly expressed. We provide evidence for a previously unrecognized microbial defense mechanism to deal with Cu toxicity, and we highlight the importance for C. neoformans of having several distinct mechanisms for coping with Cu toxicity which together could contribute to the success of this microbe as an opportunistic human fungal pathogen. IMPORTANCE C. neoformans is an opportunistic pathogen that causes lethal meningitis in over 650,000 people annually. The severity of C. neoformans infections is further compounded by the use of toxic or poorly effective systemic antifungal agents as well as by the difficulty of diagnosis. Cu is a natural potent antimicrobial agent that is compartmentalized within the macrophage phagosome and used by innate immune cells to neutralize microbial pathogens. While the Cu detoxification machinery of C. neoformans is essential for virulence, little is known about the mechanisms by which Cu kills fungi. Here we report that Fe-S cluster-containing proteins, including members of the Fe-S protein biogenesis machinery itself, are critical targets of Cu toxicity and therefore that this biosynthetic process provides an important layer of defense against high Cu levels. Given the role of Cu ionophores as antimicrobials, understanding how Cu is toxic to microorganisms could lead to the development of effective, broad-spectrum antimicrobials. Moreover, understanding Cu toxicity could provide additional insights into the pathophysiology of human diseases of Cu overload such as Wilson's disease. Copyright © 2017 Garcia-Santamarina et al.

In-situ synchrotron micro-diffraction study of surface, interface, grain structure, and strain/stress evolution during Sn whisker/hillock formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pei, Fei; Jadhav, Nitin; Buchovecky, Eric

2016-03-14

We have performed X-ray synchrotron micro-diffraction measurements to study the processes controlling the formation of hillocks and whiskers in Sn layers on Cu. The studies were done in real-time on Sn layers that were electro-deposited immediately before the X-ray measurements were started. This enabled a region of the sample to be monitored from the as-deposited state until after a hillock feature formed. In addition to measuring the grain orientation and deviatoric strain (via Laue diffraction), the X-ray fluorescence was monitored to quantify the evolution of the Sn surface morphology and the formation of intermetallic compound (IMC) at the Sn-Cu interface.more » The results capture the simultaneous growth of the feature and the corresponding film stress, grain orientation, and IMC formation. The observations are compared with proposed mechanisms for whisker/hillock growth and nucleation.« less

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE PAGES

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

2017-08-25

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Cu-based metal-organic framework thin films: A morphological and photovoltaic study

NASA Astrophysics Data System (ADS)

Khajavian, Ruhollah; Ghani, Kamal

2018-06-01

This work explores the layer-by-layer (LbL) fabrication of [Cu2(bdc)2(bpy)]n thin films by using pyridine and acetic acid as capping agents onto mesoporous titania surface. While in the presence of acetic acid highly-ordered crystals with nanoplate morphology are formed, modulation with pyridine gives rise to formation of leaf-like crystals. In addition, processing sequence also matters when modulator is added. According to our results, modulators should be added to metal solution rather than linker/pillar during LbL assembly. These films were subsequently shown to generate photocurrent in a sandwich-type Grätzel solar cell device in response to simulated 1 sun illumination. The results also demonstrated that the device consisted of well-aligned nanoplates exhibits higher power conversion efficiency than the similar cell with disordered leaf-like crystals after iodine loading.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Synthesis, structure and characterization of two new copper(I)-thioarsenates (III) constructed by the [AsS{sub 3}]{sup 3-} and CuS{sub x} units

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Hua-Gang; Ji, Min; Ji, Shou-Hua

2013-02-15

Two new copper(I)-thioarsenates(III), CsCu{sub 2}AsS{sub 3}(1) and KCu{sub 4}AsS{sub 4}(2), have been synthesized solvothermally in the presence of copper powder. Compound 1 is built up of trigonal AsS{sub 3} pyramid, tetrahedral CuAsS{sub 3} and CuS{sub 3} moieties forming 4-membered, 5-membered and 6-membered rings. The fusion of these rings produces layered anions [Cu{sub 2}AsS{sub 3}]{sup -}, and cesium cations are located between metal-sulfide layers. The structure of 2 consists of infinite [Cu{sub 2}S{sub 2}]{sup 2-} chain and layered [Cu{sub 6}As{sub 2}S{sub 6}] linked to form a three-dimensional anionic framework, [Cu{sub 4}AsS{sub 4}]{sup -}, and containing channels in which the potassium cationsmore » reside. - Graphical abstract: Qne layered CsCu{sub 2}AsS{sub 3} and one framework KCu{sub 4}AsS{sub 4} possessing noncondensed [AsS{sub 3}]{sup 3-} unit have been synthesized solvothermally. The optical band gaps of the two compounds are 2.3 and 1.8 eV, respectively. Highlights: Black-Right-Pointing-Pointer We obtained two new copper(I)-thioarsenate(III), CsCu{sub 2}AsS{sub 3} and KCu{sub 4}AsS{sub 4}. Black-Right-Pointing-Pointer Both compounds possess noncondensed [AsS{sub 3}]{sup 3-} unit and represent new structure types. Black-Right-Pointing-Pointer The optical band gaps of the two compounds are 2.3 eV and 1.8 eV, respectively.« less

ESR studies on the spin-liquid candidate κ-(BEDT-TTF)2Cu2(CN)3: Anomalous response below T=8 K

NASA Astrophysics Data System (ADS)

Padmalekha, K. G.; Blankenhorn, M.; Ivek, T.; Bogani, L.; Schlueter, J. A.; Dressel, M.

2015-03-01

The organic conductor κ-(BEDT-TTF)2Cu2(CN)3 seems to form a quantum spin liquid, although at low temperatures unusual properties are seen in the charge, spin and lattice degrees of freedom. Here we report results of X-band ESR studies of κ-(BEDT-TTF)2Cu2(CN)3 single crystals as a function of temperature and angle. We find indications of two anisotropic relaxation mechanisms at low temperatures and compare them to the spin-liquid behavior observed in other strongly correlated systems. In addition, we can recognize charge inhomogeneities in the copper ions of the anion layer. This disorder might be linked to the dielectric response measured in this compound.

In situ atomic-scale imaging of the metal/oxide interfacial transformation

DOE PAGES

Zou, Lianfeng; Li, Jonathan; Zakharov, Dmitri; ...

2017-08-21

Directly probing structure dynamics at metal/oxide interfaces has been a major challenge due to their buried nature.Using environmental transmission electron microscopy,here we report observations of the in-place formation of Cu 2O/Cu interfaces via the oxidation of Cu, and subsequently probe the atomic mechanisms by which interfacial transformation and grain rotation occur at the interfaces during reduction in an H 2 gas environment. The Cu 2O→Cu transformation is observed to occur initially along the Cu 2O/Cu interface in a layer-by-layer manner.The accumulation of oxygen vacancies at the Cu 2O/Cu interface drives the collapse of the Cu 2O lattice near the interfacemore » region, which results in a tilted Cu 2O/Cu interface with concomitant Cu 2O island rotation. Lastly, these results provide unprecedented microscopic detail regarding the redox reactions of supported oxides,which differs fundamentally from the reduction of bulk or isolated oxides that requires the formation of new interfaces between the parent oxide and the reduced phase.« less

Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

NASA Astrophysics Data System (ADS)

Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

2018-04-01

The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Ying; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ; Yaacobi-Gross, Nir

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronicmore » devices.« less

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Garcia-Barriocanal, J.; Perez-Muñoz, A. M.; Sefrioui, Z.; Arias, D.; Varela, M.; Leon, C.; Pennycook, S. J.; Santamaria, J.

2013-06-01

We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa2Cu3O7 (YBCO) layers on SrTiO3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers.

Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

DOEpatents

Feenstra, Roeland; Christen, David; Paranthaman, Mariappan

1999-01-01

A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

Ferromagnetic resonance in coupled permalloy double films separated by a Cu interlayer

NASA Astrophysics Data System (ADS)

Maksymowicz, A. Z.; Whiting, J. S. S.; Watson, M. L.; Chambers, A.

1991-03-01

Ferromagnetic resonance (FMR) at 16 GHz was used to study the magnetic coupling between two-layers of permalloy separated by a nonmagnetic Cu layer. Samples with the same thickness (600 Å) of both permalloy layers were deposited from e-gun sources onto glass substrates in UHV. The thickness d of the Cu interlayer was varied from 5 to 37 Å. The exchange coupling energy ( E = - KM1· M2) model was used to describe the interaction between the two magnetic layers. It was found from the ferromagnetic resonance data in the perpendicular configuration that K( d) follows an exponential law, K = K0e - d/ q, where q = 9.3 Å.

1D Cu(OH)2 nanorod/2D SnO2 nanosheets core/shell structured array: Covering with graphene layer leads to excellent performances on lithium-ion battery

NASA Astrophysics Data System (ADS)

Xia, Huicong; Zhang, Jianan; Chen, Zhimin; Xu, Qun

2018-05-01

A facile in-situ growth strategy is employ to achieving the two-dimensional SnO2 nanosheets/one-dimensional Cu(OH)2 nanorods nanoarchitecture on Cu foil current collector (SnO2/Cu(OH)2/Cu foil), follow by modification of a uniform layer of graphene (G). Confine with the graphene layer and unique one-dimensional/two-dimensional the nanoarchitecture, the remarkably enhance electrical conductivity and structural stability of G/SnO2/Cu(OH)2/Cu foil leads to a high reversible capacity of 1080.6 mAh g-1 at a current density of 200 mA g-1, much better than the samples without graphene (512.6 mAh g-1) and Cu(OH)2 nanorod (117.4 mAh g-1). Furthermore, G/SnO2/Cu(OH)2/Cu foil electrode shows high rate capacity (600.8 mAh g-1 at 1 A g-1) and excellent cycling stability (1057.1 mAh g-1 at 200 mA g-1 even after 500 cycles). This work highlights that increasing surface and interface effects with desirable three-dimensional nanoarchitecture can open a new avenue to electrochemical performance improvement in lithium-ion battery for SnO2-base anode.

Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spizzo, F.; Ronconi, F.; Ferrero, C.

We deposited nanogranular Co/Cu multilayers made of thin fragmented Co layers separated by thicker Cu layers to study how the structure and the microstructure of magnetic nanogranular samples change as the average particle size is reduced and how these changes affect the giant magnetoresistive response of the samples. Indeed, thanks to the vertical periodicity of the structure, namely, to the fact that Co/Cu interfaces display an ordered stacking and are not randomly distributed within the samples as in conventional granular materials, their self-correlation and cross correlation can be investigated. In this way, the characteristic length scale of the Co/Cu interfacialmore » roughness that is strictly related to the giant magnetoresistive response of the samples and the universality class of the growth mechanism that affects the systems structure can be both accessed. The Co/Cu nanogranular multilayers were characterized using different x-ray techniques, from specular reflectivity, which allows to probe the multilayer development in the vertical direction, to grazing incidence small angle diffuse scattering, which provides information on the self-correlation and cross correlation of the Co/Cu interfaces. Furthermore, diffraction measurements indicate that the degree of structural disorder increases by decreasing the thickness of the Co layers. Magnetoresistive and magnetization measurements are as well presented and discussed with the results of the structural characterization.« less

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

PubMed Central

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C

2012-01-01

Summary Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased. PMID:22497001

Junction formation of Cu(3)BiS(3) investigated by Kelvin probe force microscopy and surface photovoltage measurements.

PubMed

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C; Sadewasser, Sascha

2012-01-01

Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu(3)BiS(3) absorber layer and the junction formation with CdS, ZnS and In(2)S(3) buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20-100 nm, and a considerably smaller work-function distribution for In(2)S(3) compared to that of CdS and ZnS. For In(2)S(3) and CdS buffer layers the KPFM experiments indicate negatively charged Cu(3)BiS(3) grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In(2)S(3) buffer layer. Our findings indicate that Cu(3)BiS(3) may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.

High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw; Center for Micro/Nano Science and Technology, National Cheng Kung University, One University Road, Tainan 701, Taiwan; Lin, Hsueh-Pin

This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{supmore » 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.« less

Copper oxide/N-silicon heterojunction photovoltaic device

DOEpatents

Feng, Tom; Ghosh, Amal K.

1982-01-01

A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment in an atomic hydrogen flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Kazimirov, A. I.; Fedin, I. V.

The systematic features of the formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10{sup 15} at cm{sup 2} s{sup –1} for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu{sub 3}Ge phase. The film consists of vertically orientedmore » grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 µΩ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu{sub 3}Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu{sub 3}Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample.« less

Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

PubMed

Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

2014-11-25

Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

A copper-based layered coordination polymer: synthesis, magnetic properties and electrochemical performance in supercapacitors.

PubMed

Liu, Qi; Liu, Xiuxiu; Shi, Changdong; Zhang, Yanpeng; Feng, Xuejun; Cheng, Mei-Ling; Su, Seng; Gu, Jiande

2015-11-28

A copper-based layered coordination polymer ([Cu(hmt)(tfbdc)(H2O)]; hmt = hexamethylenetetramine, tfbdc = 2,3,5,6-tetrafluoroterephthalate; Cu-LCP) has been synthesized, and it has been structurally and magnetically characterized. The Cu-LCP shows ferromagnetic interactions between the adjacent copper(II) ions. Density functional theory calculations on the special model of Cu-LCP support the occurrence of ferromagnetic interactions. As an electrode material for supercapacitors, Cu-LCP exhibits a high specific capacitance of 1274 F g(-1) at a current density of 1 A g(-1) in 1 M LiOH electrolyte, and the capacitance retention is about 88% after 2000 cycles.

Imaging the in-plane distribution of helium precipitates at a Cu/V interface

DOE PAGES

Chen, Di; Li, Nan; Yuryev, Dina; ...

2017-02-15

Here, we describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align alongmore » $$\\langle$$110$$\\rangle$$-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.« less

Novel approach for removing brominated flame retardant from aquatic environments using Cu/Fe-based metal-organic frameworks: A case of hexabromocyclododecane (HBCD).

PubMed

Li, Xiang; Liu, Hongli; Jia, Xiaoshan; Li, Guiying; An, Taicheng; Gao, Yanpeng

2018-04-15

Cu and Fe based metal-organic frameworks (Cu-BTC and Fe-BTC) were synthesized via a simple solvothermal method and innovatively utilized to remove a typical nonionic brominated flame retardant, hexabromocyclododecane (HBCD), from aquatic environment. Results show that over 80% of HBCD was removed by Cu-BTC within 5h, which is 1.3 times higher than removal by Fe-BTC. Thermodynamic analysis confirms spontaneous adsorption of HBCD onto the metal-organic frameworks (MOFs). Furthermore, the Gibbs free energy of Cu-BTC (-9.11kJ/mol) is more negative than that of Fe-BTC (-5.04kJ/mol). Both adsorption isotherms of HBCD onto Cu-BTC and Fe-BTC followed the Langmuir model, indicating a typical monomolecular-layer adsorption mechanism. In addition, the water stability test of these MOFs shows that the collapse of the Cu-BTC crystal structure is significantly hindered in the aquatic environment due to adsorption of the hydrophobic HBCD. The proposed adsorption mechanism includes van der Waals and hydrophobic interactions. These findings demonstrate that Cu/Fe-BTC are promising adsorbents for the removal of hydrophobic organic pollutants from aquatic environments, and may further improve the understanding of MOF materials for environmental applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafarman, William N.

This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se 2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se 2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO 3 or WO 3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe 2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se 2 cells with thin absorbers« less

In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

PubMed Central

2013-01-01

Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2(CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as ‘petals’ with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PMID:23947562

Copper Accumulation, Availability and Adsorption Capacity in Sandy Soils of Vineyards with Different Cultivation Duration

NASA Astrophysics Data System (ADS)

Mallmann, F. J. K.; Miotto, A.; Bender, M. A.; Gubiani, E.; Rheinheimer, D. D. S.; Kaminski, J.; Ceretta, C. A.; Šimůnek, J.

2015-12-01

Bordeaux mixture is a copper-based (Cu) fungicide and bactericide applied in vineyards to control plant diseases. Since it is applied several times per year, it accumulates in large quantities on plants and in soil. This study evaluates the Cu accumulation in, and desorption kinetics and adsorption capability of a sandy Ultisol in a natural field and in 3 vineyards for 5 (V1), 11 (V2), and 31 (V3) years in South of Brazil. Soil samples were collected in 8 depths (0-60 cm) of all four soil profiles, which all displayed similar soil properties. The following soil properties were measured: pH, organic matter (OM), soil bulk density, Cu total concentration, and Cu desorption and adsorption curves. A two first-order reactions model and the Langmuir isotherm were fitted to the desorption and adsorption curves, respectively. An increase in the total mass of Cu in the vineyards followed a linear regression curve, with an average annual increase of 7.15 kg ha-1. Cu accumulated down to a depth of 5, 20, and 30 cm in V1, V2 and V3, respectively, with the highest Cu content reaching 138.4 mg kg-1 in the 0-5 cm soil layer of V3. Cu desorption parameters showed a high correlation with its total concentration. Approximately 57 and 19% of total Cu were immediately and slowly available, respectively, indicating a high potential for plant absorption and/or downward movement. Cu concentrations extracted by EDTA from soil layers not affected by anthropogenic Cu inputs were very low. The maximum Cu adsorption capacity of the 0-5 and 5-10 cm soil layers increased with the vineyard age, reaching concentrations higher than 900 mg kg-1. This increase was highly related to OM and pH, which both increased with cultivation duration. Despite of low clay content of these soils, there is low risk of groundwater Cu contamination for actual conditions. However, high Cu concentrations in the surface layer of the long-term vineyards could cause toxicity problems for this and for companion crops.

Ultrasonic soldering of Cu alloy using Ni-foam/Sn composite interlayer.

PubMed

Xiao, Yong; Wang, Qiwei; Wang, Ling; Zeng, Xian; Li, Mingyu; Wang, Ziqi; Zhang, Xingyi; Zhu, Xiaomeng

2018-07-01

In this study, Cu alloy joints were fabricated with a Ni-foam reinforced Sn-based composite solder with the assistance of ultrasonic vibration. Effects of ultrasonic soldering time on the microstructure and mechanical properties of Cu/Ni-Sn/Cu joints were investigated. Results showed that exceptional metallurgic bonding could be acquired with the assistance of ultrasonic vibration using a self-developed Ni-foam/Sn composite solder. For joint soldered for 5 s, a (Cu,Ni) 6 Sn 5 intermetallic compound (IMC) layer was formed on the Cu substrate surface, Ni skeletons distributed randomly in the soldering seam and a serrated (Ni,Cu) 3 Sn 4 IMC layer was formed on the Ni skeleton surface. Increasing the soldering time to 20 s, the (Ni,Cu) 3 Sn 4 IMC layer grew significantly and exhibited a loose porous structure on the Ni skeleton surface. Further increase the soldering time to 30 s, Ni skeletons were largely dissolved in the Sn base solder, and micro-sized (Ni,Cu) 3 Sn 4 particles were formed and dispersed homogeneously in the soldering seam. The formation of (Ni,Cu) 3 Sn 4 particles was mainly ascribed to acoustic cavitations induced erosion and grain refining effects. The joint soldered for 30 s exhibited the highest shear strength of 64.9 ± 3.3 MPa, and the shearing failure mainly occurred at the soldering seam/Cu substrate interface. Copyright © 2018 Elsevier B.V. All rights reserved.

Mechanism of abnormally slow crystal growth of CuZr alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, X. Q.; Lü, Y. J., E-mail: yongjunlv@bit.edu.cn; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027

2015-10-28

Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. Wemore » find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growth of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed.« less

Comparative Study of ENIG and ENEPIG as Surface Finishes for a Sn-Ag-Cu Solder Joint

NASA Astrophysics Data System (ADS)

Yoon, Jeong-Won; Noh, Bo-In; Jung, Seung-Boo

2011-09-01

Interfacial reactions and joint reliability of Sn-3.0Ag-0.5Cu solder with two different surface finishes, electroless nickel-immersion gold (ENIG) and electroless nickel-electroless palladium-immersion gold (ENEPIG), were evaluated during a reflow process. We first compared the interfacial reactions of the two solder joints and also successfully revealed a connection between the interfacial reaction behavior and mechanical reliability. The Sn-Ag-Cu/ENIG joint exhibited a higher intermetallic compound (IMC) growth rate and a higher consumption rate of the Ni(P) layer than the Sn-Ag-Cu/ENEPIG joint. The presence of the Pd layer in the ENEPIG suppressed the growth of the interfacial IMC layer and the consumption of the Ni(P) layer, resulting in the superior interfacial stability of the solder joint. The shear test results show that the ENIG joint fractured along the interface, exhibiting indications of brittle failure possibly due to the brittle IMC layer. In contrast, the failure of the ENEPIG joint only went through the bulk solder, supporting the idea that the interface is mechanically reliable. The results from this study confirm that the Sn-Ag-Cu/ENEPIG solder joint is mechanically robust and, thus, the combination is a viable option for a Pb-free package system.

Multilayer Regulation of Atomic Boron Nitride Films to Improve Oxidation and Corrosion Resistance of Cu.

PubMed

Ren, Siming; Cui, Mingjun; Pu, Jibin; Xue, Qunji; Wang, Liping

2017-08-16

The boron nitride (BN) monolayer (1L) with high impermeability and resistivity seems to hold promise as a long-term corrosion barrier for Cu under ambient condition, which is supported by recent researches. Here, we perform a complete study of the alternating temperature tests (the sample is exposed in air for 30 days and subsequently heated at 200 °C for 2 h) and electrochemical measurements on 1L and multilayer BN-coated Cu foils. Results imply that the BN-coated Cu foils are less oxidized than uncoated Cu foils after alternating temperature tests, regardless of the layers of BN. Particularly, the oxidation process proceeds slowly in multilayers because most of the underlying defects are covered with BN layers to suppress the oxygen diffusion in the vertical direction and the oxidation mainly occurs on the wrinkled region of BN films. Electrochemical analyses reveal that the BN layers provide an effective physical barrier against the corrosive medium and inhibit the electron diffusion because of their high electrical insulating behavior and the corrosion resistance of the samples increases with increasing BN layers. These findings indicate that BN films with adequate layers are good candidates for oxidation and corrosion protection at the atomic level, which is vital to many industrial and academic applications.

Influences of alkaline earth metal substitution on the crystal structure and physical properties of magnetic RuSr1.9A0.1GdCu2O8 (A = Ca, Sr, and Ba) superconductors.

PubMed

Hur, Su Gil; Park, Dae Hoon; Hwang, Seong-Ju; Kim, Seung Joo; Lee, J H; Lee, Sang Young

2005-11-24

We have investigated the effect of alkaline earth metal substitution on the crystal structure and physical properties of magnetic superconductors RuSr(1.9)A(0.1)GdCu(2)O(8) (A = Ca, Sr, and Ba) in order to probe an interaction between the magnetic coupling of the RuO(2) layer and the superconductivity of the CuO(2) layer. X-ray diffraction and X-ray absorption spectroscopic analyses demonstrate that the isovalent substitution of Sr ions with Ca or Ba ions makes it possible to tune the interlayer distance between the CuO(2) and the RuO(2) layers. From the measurements of electrical resistance and magnetic susceptibility, it was found that, in contrast to negligible change of magnetization, both of the alkaline earth metal substitutions lead to a notable depression of zero-resistance temperature T(c) (DeltaT(c) approximately 17-19 K). On the basis of the absence of a systematic correlation between the T(c) and the interlayer distance/magnetization, we have concluded that the internal magnetic field of the RuO(2) layer has insignificant influence on the superconducting property of the CuO(2) layer in the ruthenocuprate.

Apparently enhanced magnetization of Cu(I)-modified γ-Fe2O3 based nanoparticles

NASA Astrophysics Data System (ADS)

Qiu, Xiaoyan; He, Zhenghong; Mao, Hong; Zhang, Ting; Lin, Yueqiang; Liu, Xiaodong; Li, Decai; Meng, Xiangshen; Li, Jian

2017-11-01

Using a chemically induced transition method in FeCl2 solution, γ-Fe2O3 based magnetic nanoparticles, in which γ-Fe2O3 crystallites were coated with FeCl3ṡ6H2O, were prepared. During the synthesis of the γ-Fe2O3 nanoparticles Cu(I) modification of the particles was attempted. According to the results from both magnetization measurements and structural characterization, it was judged that a magnetic silent "dead layer", which can be attributed to spin disorder in the surface of the γ-Fe2O3 crystallites due to breaking of the crystal symmetry, existed in the unmodified particles. For the Cu(I)-modified sample, the CuCl thin layer on the γ-Fe2O3 crystallites incurred the crystal symmetry to reduce the spin disorder, which "awakened" the "dead layer" on the surface of the γ-Fe2O3 crystallites, enhancing the apparent magnetization of the Cu(I)-modified nanoparticles. It was determined that the surface spin disorder of the magnetic crystallite could be related to the coating layer on the crystallite, and can be modified by altering the coating layer to enhance the effective magnetization of the magnetic nanoparticles.

Evaluation of Electrochemical Migration on Printed Circuit Boards with Lead-Free and Tin-Lead Solder

NASA Astrophysics Data System (ADS)

He, Xiaofei; Azarian, Michael H.; Pecht, Michael G.

2011-09-01

To evaluate the current leakage and electrochemical migration behavior on printed circuit boards with eutectic tin-lead and lead-free solder, IPC B-24 comb structures were exposed to 65°C and 88% relative humidity conditions under direct-current (DC) bias for over 1500 h. These boards were processed with either Sn-3.0Ag-0.5Cu solder or Sn-37Pb solder. In addition to solder alloy, board finish (organic solderability preservative versus lead-free hot air solder leveling), spacing (25 mil versus 12.5 mil), and voltage (40 V versus 5 V bias) were also assessed by using in situ measurements of surface insulation resistance (SIR) and energy-dispersive spectroscopy after testing. It was shown that an initial increase of SIR was caused by consumption of electroactive species on the surface, intermittent drops of SIR were caused by dendritic growth, and a long-term SIR decline was caused by electrodeposition of a metallic layer. The prolonged SIR decline of Sn-3.0Ag-0.5Cu boards was simulated by three-dimensional (3D) progressive and instantaneous nucleation models, whose predictions were compared with experimental data. Sn-37Pb boards exhibited comigration of Sn, Pb, and Cu, while Sn-3.0Ag-0.5Cu boards incurred comigration of Sn, Ag, and Cu. Among the migrated species, Sn always dominated and was observed as either a layer or in polyhedral deposits, Pb was the most common element found in the dendrites, Cu was a minor constituent, and Ag migrated only occasionally. Compared with solder alloy, board finishes played a secondary role in affecting SIR due to their complexation with or dissolution into the solder. The competing effect between electric field and spacing was also investigated.

A Novel Synthesis Routine for Woodwardite and Its Affinity towards Light (La, Ce, Nd) and Heavy (Gd and Y) Rare Earth Elements.

PubMed

Consani, Sirio; Balić-Žunić, Tonci; Cardinale, Anna Maria; Sgroi, Walter; Giuli, Gabriele; Carbone, Cristina

2018-01-14

A synthetic Cu-Al-SO₄ layered double hydroxide (LDH), analogue to the mineral woodwardite [Cu 1-x Al x (SO₄) x/2 (OH)₂·nH₂O], with x < 0.5 and n ≤ 3x/2, was synthesised by adding a solution of Cu and Al sulphates to a solution with NaOH. The pH values were kept constant at 8.0 and 10.0 by a continuous addition of NaOH. The material obtained had poor crystallinity, turbostratic structure, and consisted of nanoscopic crystallites. The analyses performed in order to characterise the obtained materials (X-ray diffraction (XRD), thermogravimetry (TG), and Fourier Transform Infra-Red (FTIR) spectroscopy) showed that the Cu-Al-SO₄ LDH is very similar to woodwardite, although it has a smaller layer spacing, presumably due to a lesser water content than in natural samples. The synthesis was performed by adding light rare earth elements (LREEs) (La, Ce, and Nd) and heavy rare earth elements (HREEs) (Gd and Y) in order to test the affinity of the Cu-Al-SO₄ LDH to the incorporation of REEs. The concentration of rare earth elements (REEs) in the solid fraction was in the range of 3.5-8 wt %. The results showed a good affinity for HREE and Nd, especially for materials synthesised at pH 10.0, whereas the affinities for Ce and La were much lower or non-existent. The thermal decomposition of the REE-doped materials generates a mixture of Cu, Al, and REE oxides, making them interesting as precursors in REE oxide synthesis.

A Novel Synthesis Routine for Woodwardite and Its Affinity towards Light (La, Ce, Nd) and Heavy (Gd and Y) Rare Earth Elements

PubMed Central

Consani, Sirio; Balić-Žunić, Tonci; Cardinale, Anna Maria; Sgroi, Walter; Giuli, Gabriele; Carbone, Cristina

2018-01-01

A synthetic Cu-Al-SO4 layered double hydroxide (LDH), analogue to the mineral woodwardite [Cu1−xAlx(SO4)x/2(OH)2·nH2O], with x < 0.5 and n ≤ 3x/2, was synthesised by adding a solution of Cu and Al sulphates to a solution with NaOH. The pH values were kept constant at 8.0 and 10.0 by a continuous addition of NaOH. The material obtained had poor crystallinity, turbostratic structure, and consisted of nanoscopic crystallites. The analyses performed in order to characterise the obtained materials (X-ray diffraction (XRD), thermogravimetry (TG), and Fourier Transform Infra-Red (FTIR) spectroscopy) showed that the Cu-Al-SO4 LDH is very similar to woodwardite, although it has a smaller layer spacing, presumably due to a lesser water content than in natural samples. The synthesis was performed by adding light rare earth elements (LREEs) (La, Ce, and Nd) and heavy rare earth elements (HREEs) (Gd and Y) in order to test the affinity of the Cu-Al-SO4 LDH to the incorporation of REEs. The concentration of rare earth elements (REEs) in the solid fraction was in the range of 3.5–8 wt %. The results showed a good affinity for HREE and Nd, especially for materials synthesised at pH 10.0, whereas the affinities for Ce and La were much lower or non-existent. The thermal decomposition of the REE-doped materials generates a mixture of Cu, Al, and REE oxides, making them interesting as precursors in REE oxide synthesis. PMID:29342887

Magnetism and superconductivity of some Tl-Cu oxides

NASA Technical Reports Server (NTRS)

Datta, Timir

1990-01-01

Many copper oxide based Thallium compounds have now been discovered. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; viz., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are evidenced, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance as high as 125K has been observed. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in the conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) accurate thermal measurement of important parameters such as the sp. heat jump, electronic density of states, D(Ef) and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO, 120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the TlCuO HTSC, but technological aspects are also pointed out.

Magnetism and superconductivity of some Tl-Cu oxides

NASA Technical Reports Server (NTRS)

Datta, Timir

1991-01-01

Many copper oxide based Thallium compounds are now known. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; i.e., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are found, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance was observed at temperatures as great as 125 K. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) jump, electronic density of states, D(Ef), and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO,120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the Tl-CuO HTSC, but technological aspects are also pointed out.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakova, I. N., E-mail: polyakova@igic.ras.ru; Poznyak, A. L.; Sergienko, V. S.

Four Cu(II) complexes with the RR,SS-Edds{sup 4-} and SS-HEdds{sup 3-} anions are synthesized, and their crystal structures are studied. In the compounds [Cu2(RR,SS-Edds)] . 6H{sub 2}O (I) and Ba2[Cu(RR,SS-Edds)](ClO{sub 4}){sub 2} . 8H{sub 2}O (II), the ligand forms hexacoordinate chelate [Cu(Edds)]{sup 2-} complexes with the N atoms and O atoms of the propionate groups in the equatorial positions and the O atoms of the acetate groups in the axial vertices. In the compounds Ba[Cu(SS-HEdds)]ClO{sub 4} . 2H{sub 2}O (III) and Ba3[Cu2(RR,SS-Edds){sub 2}](ClO{sub 4}){sub 2} . 6H{sub 2}O (IV), one of the propionate arms, the protonated arm in III and themore » deprotonated arm in IV, does not enter into the coordination sphere of the Cu atom. An acetate arm moves to its position in the equatorial plane, and the free axial vertex is occupied by an O atom of the perchlorate ion. In I-IV, the lengths of the equatorial Cu-N and Cu-O bonds fall in the ranges 1.970-2.014 and 1.921-1.970 A, respectively. The axial Cu-O bonds with the acetate groups and ClO{sub 4}{sup -} anions are elongated to 2.293-2.500 and 2.727-2.992 A, respectively. In structure I, the second Cu atom acts as a counterion forming bonds with the O atoms of two water molecules and three O atoms of the Edds ligands. In II-IV, the Ba{sup 2+} cations are hydrated and bound to the O atoms of the anionic complexes and (except for one of the cations in IV) ClO{sub 4}{sup -} anions. The coordination number of the Ba cations is nine. The structural units in I-IV are connected into layers. In I, an extended system of hydrogen bonds links the layers into a framework. In II and III, the layers are linked only by weak hydrogen bonds, one bond per structural unit. In IV, ClO{sub 4}{sup -} anions are bound to the Ba and Cu atoms of neighboring layers, thus serving as bridges between the layers.« less

Effects of plasma pretreatment on the process of self-forming Cu-Mn alloy barriers for Cu interconnects

NASA Astrophysics Data System (ADS)

Park, Jae-Hyung; Han, Dong-Suk; Kim, Kyoung-Deok; Park, Jong-Wan

2018-02-01

This study investigated the effect of plasma pretreatment on the process of a self-forming Cu-Mn alloy barrier on porous low-k dielectrics. To study the effects of plasma on the performance of a self-formed Mn-based barrier, low-k dielectrics were pretreated with H2 plasma or NH3 plasma. Cu-Mn alloy materials on low-k substrates that were subject to pretreatment with H2 plasma exhibited lower electrical resistivity values and the formation of thicker Mn-based interlayers than those on low-k substrates that were subject to pretreatment with NH3 plasma. Transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analyses demonstrated the exceptional performance of the Mn-based interlayer on plasma-pretreated low-k substrates with regard to thickness, chemical composition, and reliability. Plasma treating with H2 gas formed hydrophilic Si-OH bonds on the surface of the low-k layer, resulting in Mn-based interlayers with greater thickness after annealing. However, additional moisture uptake was induced on the surface of the low-k dielectric, degrading electrical reliability. By contrast, plasma treating with NH3 gas was less effective with regard to forming a Mn-based interlayer, but produced a Si-N/C-N layer on the low-k surface, yielding improved barrier characteristics.

Structure and magnetic properties of iron-based soft magnetic composite with Ni-Cu-Zn ferrite-silicone insulation coating

NASA Astrophysics Data System (ADS)

Li, Wangchang; Wang, Wei; Lv, Junjun; Ying, Yao; Yu, Jing; Zheng, Jingwu; Qiao, Liang; Che, Shenglei

2018-06-01

This paper investigates the structure and magnetic properties of Ni-Cu-Zn ferrite-silicone coated iron-based soft magnetic composites (SMCs). Scanning electron microscopy coupled with a energy-dispersive spectroscopy (EDS) analysis revealed that the Ni-Cu-Zn ferrite and silicone resin were uniformly coated on the surface of iron powders. By controlling the composition of the coating layer, low total core loss of 97.7 mW/cm3 (eddy current loss of 48 mW/cm3, hysteresis loss of 49.7 mW/cm3, measured at 100 kHz and 0.02 T) and relatively high effective permeability of 72.5 (measured at 100 kHz) were achieved. In addition, the as-prepared SMCs displayed higher electrical resistivity, good magnetic characteristics over a wide range of frequencies (20-200 kHz) and ideal the D-C bias properties (more than 75% at H = 50 Oe). Furthermore, higher elastic modulus and hardness of SMCs, which means that the coating layer has good mechanical properties and is not easily damaged during the pressing process, were obtained in this paper. The results of this work indicate that the Ni-Cu-Zn ferrite-silicone coated SMCs have desirable properties which would make them suitable for application in the fields of the electric-magnetic switching devices, such as inductance coils, transformer cores, synchronous electric motors and resonant inductors.

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupledmore » plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.« less

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

2016-01-01

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

Stabilization of the O p2x2 phase on Cu(001) sheltered by wrinkled BN over-layer

NASA Astrophysics Data System (ADS)

Kim, Yong-Sung; Ma, Chuanxu; Li, An-Ping; Yoon, Mina

The 2 √3x √3R45°phase of oxygen (O) on the Cu(001) surface has been observed in scanning tunneling microscopy (STM) measurements. Although the p2x2 phase of O on the Cu(001) surface has been proposed theoretically to be the most stable in O-lean conditions, it has not been observed in experiments for a long time. Recently, the O p2x2 phase has been found in STM on the Cu(001) surface with an overlying BN monolayer. In this theoretical study, we investigate what the role of BN over-layer is to stabilize the O p2x2 phase on the Cu(001) surface. The BN over-layer is lattice-matched with the Cu(001) surface and the BN mono-layer sheet is periodically wrinkled along the BN arm-chair direction and along the [100] or [010] direction on the Cu(001) surface. The interlayer space between the Cu(001) surface and the bulge of the wrinkled BN sheet is found to play as a preferential shelter for O to be adsorbed, and the boundary of the BN inner wall along the [010] or [100] direction makes the p2x2 phase more favorable against the 45°-tilted 2 √3x √3R45°phase of O on the Cu(001) surface. This was supported by Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, maaged by UT-Battelle, LLC, for the U. S. DOE.

PCDD/F adsorption and destruction in the flue gas streams of MWI and MSP via Cu and Fe catalysts supported on carbon.

PubMed

Chang, Shu Hao; Yeh, Jhy Wei; Chein, Hung Min; Hsu, Li Yeh; Chi, Kai Hsien; Chang, Moo Been

2008-08-01

Catalytic destruction has been applied to control polychlorinated dibenzo-p-dioxin and dibenzofuran (PCDD/Fs) emissions from different facilities. The cost of carbon-based catalysts is considerably lower than that of the metal oxide or zeolite-based catalysts used in the selective catalytic reduction (SCR) system. In this study, destruction and adsorption efficiencies of PCDD/Fs achieved with Cu/C and Fe/C catalysts from flue gas streams of a metal smelting plant (MSP) and a large-scale municipal waste incinerator (MWI), respectively, are evaluated via the pilot-scale catalytic reactor system (PCRS). The results indicate that Cu and Fe catalysts supported on carbon surface are capable of decomposing and adsorbing PCDD/ Fs from gas streams. In the testing sources of MSP and MWI, the PCDD/F removal efficiencies achieved with Cu/C catalyst at 250 degrees C reach 96%, however, the destruction efficiencies are negative (-1,390% and -112%, respectively) due to significant PCDD/F formation on catalyst promoted by copper. In addition, Fe/C catalyst is of higher removal and destruction efficiencies compared with Cu/C catalyst in both testing sources. The removal efficiencies of PCDD/Fs achieved with Fe/C catalyst are 97 and 94% for MSP and MWI, respectively, whereas the destruction efficiencies are both higher than 70%. Decrease of PCDD/F destruction efficiency and increase of adsorption efficiency with increasing chlorination of dioxin congeners is also observed in the test via three-layer Fe/C catalyst. Furthermore, the mass of 2,3,7,8-PCDD/Fs retained on catalyst decreases on the order of first to third layer of catalyst. Each gram Fe/C catalyst in first layer adsorbs 10.9, 6.91, and 3.04 ng 2,3,7,8-PCDD/Fs in 100 min testing duration as the operating temperature is controlled at 150, 200, and 250 degrees C, respectively.

Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

PubMed

El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

2013-07-01

The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

Molecular charge distribution and dispersion of electronic states in the contact layer between pentacene and Cu(119) and beyond

NASA Astrophysics Data System (ADS)

Annese, E.; Fujii, J.; Baldacchini, C.; Zhou, B.; Viol, C. E.; Vobornik, I.; Betti, M. G.; Rossi, G.

2008-05-01

The interaction of pentacene molecules in contact with the Cu(119) stepped surface has been directly imaged by scanning tunneling microscopy and analyzed by angle resolved photoemission spectroscopy. Interacting molecules, which are in contact with copper, generate dispersive electronic states associated with a perturbed electron charge density distribution of the molecular orbitals. In contrast, the electron charge density of molecules of the pentacene on top of the first layer, which is not in direct contact with the Cu surface, shows an intramolecular structure very similar to that of the free molecule. Our results indicate that the delocalization of the molecular states in the pentacene/Cu system is confined to the very first molecular layer at the interface.

Cu-doped CdS and its application in CdTe thin film solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Yi; College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212; Yang, Jun

2016-01-15

Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atommore » hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.« less

Temperature dependence of positron annihilation parameters in Tl-Ba-Ca-Cu-O superconductors

NASA Astrophysics Data System (ADS)

Sundar, C. S.; Bharathi, A.; Ching, W. Y.; Jean, Y. C.; Hor, P. H.; Meng, R. L.; Huang, Z. J.; Chu, C. W.

1990-08-01

The results of positron lifetime and Doppler broadened line-shape parameter measurements as a function of temperature, across Tc, in the Tl-Ba-Ca-Cu-O superconductors are presented. The bulk lifetime in the normal state is found to decrease with the increase in the number of CuO2 layers. Different temperature dependencies of the annihilation parameters are observed in the various Tl systems containing different numbers of CuO2 layers. In the Tl2Ba2Ca2Cu3O10 system, an increase in lifetime is observed below Tc, whereas in Tl2Ba2CaCu2O8, a decrease in lifetime is seen below Tc. In the Tl2Ba2CuO6 system, the lifetime is observed to be temperature independent. The different temperature variations of positron annihilation parameters are discussed in the light of the positron density distribution, obtained with use of the results of the self-consistent orthogonalized linear combination of atomic orbitals band-structure calculations. It is argued that the different temperature dependencies of the annihilation parameters is related to the positron density distribution within the unit cell and arise due to local charge transfer in the vicinity of the CuO2 layer in the superconducting state.

Ionothermal synthesis and structural transformation targeted by ion exchange in metal-1,3,5-benzenetricarboxylate compounds

NASA Astrophysics Data System (ADS)

Xu, Qing-Qing; Liu, Bing; Xu, Ling; Jiao, Huan

2017-03-01

Ionothermal reactions of 1,3,5-benzenetricarboxylate acid (H3BTC) and Ni(NO3)2, Co(NO3)2 and Cu(NO3)2 gave two discrete 32-membered ring-like allomers, [M2(HBTC)2(NH2CONH2)2(H2O)4]·3H2O (M=Ni(1), Co(2)) and one layered [Cu2(BTC)Cl(H2O)4] (3). The weak interactions in 1 can be deconstructed to some degree in ion exchange by exploring the factors of divalent and trivalent metal species, metal concentration and soaking time, which are demonstrated by PXRD and N2 absorption. Cu2+ has the highest N2 adsorbance when soaking with 1, and 1 can keep structure stable when Cu2+ below 0.16 mol L-1 and the soaking time within 24d. As Cu2+ beyond 0.16 mol L-1 and the soaking time beyond 24d, the structure of compound 1 starts to transform with the crystal morphology from clear pale green to opaque blue. Ionothermal reactions of compound 1 with different Cu2+ amounts obtained Ni2+-Cu2+ hetero complexes, whose PXRD patterns are similar to that of 3 and EDS indicates Cu2+% increases with Cu2+ additions and close to 100% as Cu2+ being 1.6 mmol. It suggests that 3 is a controlled product and Cu2+ can transform discrete compound 1 into 2D compound 3.

CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices.

PubMed

Shi, Yuanyuan; Gimbert-Suriñach, Carolina; Han, Tingting; Berardi, Serena; Lanza, Mario; Llobet, Antoni

2016-01-13

One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.

Method Producing an SNS Superconducting Junction with Weak Link Barrier

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor)

1999-01-01

A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

Perspective: Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; Ievskaya, Yulia; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk

2015-02-01

Electrochemically deposited Cu{sub 2}O solar cells are receiving growing attention owing to a recent doubling in efficiency. This was enabled by the controlled chemical environment used in depositing doped ZnO layers by atomic layer deposition, which is not well suited to large-scale industrial production. While open air fabrication with atmospheric pressure spatial atomic layer deposition overcomes this limitation, we find that this approach is limited by an inability to remove the detrimental CuO layer that forms on the Cu{sub 2}O surface. Herein, we propose strategies for achieving efficiencies in atmospherically processed cells that are equivalent to the high values achievedmore » in vacuum processed cells.« less

Superhydrophilicity and antibacterial property of a Cu-dotted oxide coating surface

PubMed Central

2010-01-01

Background Aluminum-made settings are widely used in healthcare, schools, public facilities and transit systems. Frequently-touched surfaces of those settings are likely to harbour bacteria and be a potential source of infection. One method to utilize the effectiveness of copper (Cu) in eliminating pathogens for these surfaces would be to coat the aluminum (Al) items with a Cu coating. However, such a combination of Cu and Al metals is susceptible to galvanic corrosion because of their different electrochemical potentials. Methods In this work, a new approach was proposed in which electrolytic plasma oxidation (EPO) of Al was used to form an oxide surface layer followed by electroplating of Cu metal on the top of the oxide layer. The oxide was designed to function as a corrosion protective and biocompatible layer, and the Cu in the form of dots was utilized as an antibacterial material. The antibacterial property enhanced by superhydrophilicity of the Cu-dotted oxide coating was evaluated. Results A superhydrophilic surface was successfully prepared using electrolytic plasma oxidation of aluminum (Al) followed by electroplating of copper (Cu) in a Cu-dotted form. Both Cu plate and Cu-dotted oxide surfaces had excellent antimicrobial activities against E. coli ATCC 25922, methicillin-resistant Staphylococcus aureus (MRSA) ATCC 43300 and vancomycin-resistant Enterococcus faecium (VRE) ATCC 51299. However, its Cu-dotted surface morphology allowed the Cu-dotted oxide surface to be more antibacterial than the smooth Cu plate surface. The enhanced antibacterial property was attributed to the superhydrophilic behaviour of the Cu-dotted oxide surface that allowed the bacteria to have a more effective killing contact with Cu due to spreading of the bacterial suspension media. Conclusion The superhydrophilic Cu-dotted oxide coating surface provided an effective method of controlling bacterial growth and survival on contact surfaces and thus reduces the risk of infection and spread of bacteria-related diseases particularly in moist or wet environments. PMID:20843373

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

NASA Astrophysics Data System (ADS)

Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

2018-01-01

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

Cu-rGO subsurface layer creation on copper substrate and its resistance to oxidation

NASA Astrophysics Data System (ADS)

Pietrzak, Katarzyna; Strojny-Nędza, Agata; Olesińska, Wiesława; Bańkowska, Anna; Gładki, Andrzej

2017-11-01

On the basis of a specially designed experiment, this paper presents a model, which is an attempt to explain the mechanism of formatting and creating oxidation resistance of Cu-rGO subsurface layers. Practically zero chemical affinity of copper to carbon is a fundamental difficulty in creating composite structures of Cu-C, properties which are theoretically possible to estimate. In order to bind the thermally reduced graphene oxide with copper surface, the effect of structural rebuilding of the copper oxide, in the process of annealing in a nitrogen atmosphere, have been used. On intentionally oxidized and anoxic copper substrates the dispersed graphene oxide (GO) and thermally reduced graphene oxide (rGO) were loaded. Annealing processes after the binding effects of both graphene oxide forms to Cu substrates were tested. The methods for high-resolution electron microscopy were found subsurface rGO-Cu layer having a substantially greater resistance to oxidation than pure copper. The mechanism for the effective resistance to oxidation of the Cu-rGO has been presented in a hypothetical form.

In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

NASA Astrophysics Data System (ADS)

Masudy-Panah, Saeid; Radhakrishnan, K.; Ru, Tan Hui; Yi, Ren; Wong, Ten It; Dalapati, Goutam Kumar

2016-09-01

Aluminum-doped cupric oxide (CuO:Al) was prepared via an out-diffusion process of Al from an Al-coated substrate into the deposited CuO thin film upon thermal treatment. The effect of the annealing temperature on the structural and optical properties of CuO:Al was investigated in detail. The influence of Al incorporation on the photovoltaic properties was then investigated by preparing a p-CuO:Al/n-Si heterojunction solar cell. A significant improvement in the performance of the solar cell was achieved by controlling the out-diffusion of Al. A novel in situ method to co-dope CuO with Al and titanium (Ti) has been proposed to demonstrate CuO-based solar cells with the front surface field (FSF) design. The FSF design was created by depositing a CuO:Al layer followed by a Ti-doped CuO (CuO:Ti) layer. This is the first successful experimental demonstration of the codoping of a CuO thin film and CuO thin film solar cells with the FSF design. The open circuit voltage (V oc), short circuit current density (J sc) and fill factor (FF) of the fabricated solar cells were significantly higher for the FSF device compared to devices without FSF. The FF of this device improved by 68% through the FSF design and a record efficiency ɳ of 2% was achieved. The improvement of the solar cell properties is mainly attributed to the reduction of surface recombination, which influences the charge carrier collection.

Effect of Sn-Ag-Cu on the Improvement of Electromigration Behavior in Sn-58Bi Solder Joint

NASA Astrophysics Data System (ADS)

Wang, Fengjiang; Zhou, Lili; Zhang, Zhijie; Wang, Jiheng; Wang, Xiaojing; Wu, Mingfang

2017-10-01

Reliability issues caused by the formation of a Bi-rich layer at the anode interface usually occurs in the Sn-58Bi eutectic solder joint during electromigration (EM). To improve the EM performance of a Sn-58Bi solder joint, Sn-3.0Ag-0.5Cu solder was introduced into it to produce SnBi-SnAgCu structural or compositional composite joints, and their EM behaviors were investigated with the current density of 1.0 × 104 A/cm2 for different stressing times. The structure of the compositional composite solder joint was obtained by the occurrence of partial or full mixing between Sn-Bi and Sn-Ag-Cu solder with a suitable soldering temperature. In the structural composite joint, melted Sn-Bi was partially mixed with Sn-Ag-Cu solder to produce a Cu/Sn-Bi/Sn-Ag-Cu/Sn-Bi/Cu structure. In the compositional composite joint, full melting and mixing between these two solders occurred to produce a Cu/Sn-Ag-Cu-Bi/Cu structure, in which the solder matrix was a homogeneous structure including Sn, Bi phases, Cu6Sn5 and Ag3Sn IMCs. After current stressing, the EM performance of Sn-Bi solder was obviously improved with the structural or the compositional composite joint. In Sn-58Bi joints, a thick Bi-rich layer was easily produced at the anode interface, and obviously increased with stressing time. However, after current stressing on the structural composite joints, the existence of s Sn-3.0Ag-0.5Cu interlayer between the two Sn-58Bi solders effectively acted as a diffusion barrier and significantly slowed the formation of the Bi-rich layer at the anode side and the IMC thicknesses at the interfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, S.; Li, N.; Maeder, X.

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Magnetic properties of Co/Ni grain boundaries after annealing

NASA Astrophysics Data System (ADS)

Coutts, Chris; Arora, Monika; Hübner, René; Heinrich, Bret; Girt, Erol

2018-05-01

Magnetic and microstructural properties of <111> textured Cu/N×[Co/Ni] films are studied as a function of the number of bilayer repeats N and annealing temperature. M(H) loop measurements show that coercivity, Hc, increases with annealing temperature and that the slope of the saturation curve at Hc has a larger reduction for smaller N. An increase of the magnetic anisotropy (Ku) to saturation magnetization (Ms) ratio after annealing N×[Co/Ni] with N < 15 only partially describes the increase to Hc. Energy-dispersive X-ray spectroscopy analyses performed in scanning transmission electron microscopy mode across cross-sections of as-deposited and annealed Cu/16×[Co/Ni] films show that Cu diffuses from the seed layer into grain boundaries of Co/Ni. Diffusion of Cu reduces exchange coupling (Hex) between the magnetic grains and explains the increase in Hc. Additionally, the difference in the slope of the M(H) curves at Hc between the thick (N = 16) and thin (N = 4) magnetic multilayers is due to Cu diffusion more effectively decoupling magnetic grains in the thinner multilayer.

Can Positron 2D-ACAR Resolve the Electronic Structure of HIGH-Tc Superconductors?

NASA Astrophysics Data System (ADS)

Chan, L. P.; Lynn, K. G.; Harshman, D. R.

We examine the ability of the positron Two-Dimensional Angular Correlation Annihilation Radiation (2D-ACAR) technique to resolve the electronic structures of high-Tc cuprate superconductors. Following a short description of the technique, discussions of the theoretical assumptions, data analysis and experimental considerations, in relation to the high-Tc superconductors, are given. We briefly review recent 2D-ACAR experiments on YBa2Cu3O7-x, Bi2Sr2CaCuO8+δ and La2-xSrxCuO4. The 2D-ACAR technique is useful in resolving the band crossings associated with the layers of the superconductors that are preferentially sampled by the positrons. Together with other Fermi surface measurements (namely angle-resolved photoemission), 2D-ACAR can resolve some of the electronic structures of high-Tc cuprate superconductors. In addition, 2D-ACAR measurements of YBa2Cu3O7-x and Bi2Sr2CaCuO8+δ also reveal an interesting temperature dependence in the fine structures, and a change in the positron lifetime in the former.

Twin-mediated epitaxial growth of highly lattice-mismatched Cu/Ag core-shell nanowires.

PubMed

Weng, Wei-Lun; Hsu, Chin-Yu; Lee, Jheng-Syun; Fan, Hsin-Hsin; Liao, Chien-Neng

2018-05-31

Lattice-mismatch is an important factor for the heteroepitaxial growth of core-shell nanostructures. A large lattice-mismatch usually leads to a non-coherent interface or a polycrystalline shell layer. In this study, a conformal Ag layer is coated on Cu nanowires with dense nanoscale twin boundaries through a galvanic replacement reaction. Despite a large lattice mismatch between Ag and Cu (∼12.6%), the Ag shell replicates the twinning structure in Cu nanowires and grows epitaxially on the nanotwinned Cu nanowire. A twin-mediated growth mechanism is proposed to explain the epitaxy of high lattice-mismatch bimetallic systems in which the misfit dislocations are accommodated by coherent twin boundaries.

Long term high temperature oxidation characteristics of La and Cu alloyed ferritic stainless steels for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Swaminathan, Srinivasan; Lee, Young-Su; Kim, Dong-Ik

2016-09-01

To ensure the best performance of solid oxide fuel cell metallic interconnects, the Fe-22 wt.% Cr ferritic stainless steels with various La contents (0.006-0.6 wt.%) and Cu addition (1.57 wt.%), are developed. Long-term isothermal oxidation behavior of these steels is investigated in air at 800 °C, for 2700 h. Chemistry, morphology, and microstructure of the thermally grown oxide scale are examined using XPS, SEM-EDX, and XRD techniques. Broadly, all the steels show a double layer consisting of an inner Cr2O3 and outer (Mn, Cr)3O4. Distinctly, in the La-added steels, binary oxides of Cr, Mn and Ti are found at the oxide scale surface together with (Mn, Cr)3O4. Furthermore, all La-varied steels possess the metallic Fe protrusions along with discontinuous (Mn, Cr)3O4 spinel zones at the oxide scale/metal interface and isolated precipitates of Ti-oxides in the underlying matrix. Increase of La content to 0.6 wt.% is detrimental to the oxidation resistance. For the Cu-added steel, Cu is found to segregate strongly at the oxide scale/metal interface which inhibits the ingress of oxygen thereby suppressing the subscale formation of (Mn, Cr)3O4. Thus, Cu addition to the Fe-22Cr ferritic stainless steels benefits the oxidation resistance.

Removal of Cu(II) ions from contaminated waters using a conducting microfiltration membrane.

PubMed

Wang, Xueye; Wang, Zhiwei; Chen, Haiqin; Wu, Zhichao

2017-10-05

Efficient removal of toxic metals using low-pressure membrane processes from contaminated waters is an important but challenging task. In the present work, a conducting microfiltration membrane prepared by embedding a stainless steel mesh in the active layer of a polyvinylidene fluoride membrane is developed to remove Cu(II) ions from contaminated waters. Results showed that the conducting membrane had favorable electrochemical properties and stability as cathode. Batch tests showed that Cu(II) removal efficiency increased with the increase of voltages and leveled off with the further enhancement of electric field. The optimal voltages were determined to be 1.0V and 2.0V for the influent Cu(II) concentrations of 5mg/L and 30mg/L, respectively. X-ray photoelectron spectroscopy and X-ray diffraction results demonstrated the presence of Cu(0) and Cu(OH) 2 on the membrane surface. The removal mechanisms involved the intrinsic adsorption of membrane, electrosorption of membrane, adsorption of deposited layer, chemical precipitation of Cu(OH) 2 and deposition of Cu(0) which were aided by electrophoresis and electrochemical oxidation-reduction. Long-term tests showed that the major contributors for Cu(II) removal were the deposition of Cu(0) by electrochemical reduction-oxidation (47.3%±8.5%) and chemical precipitation (41.1%±0.2%), followed by electrosorption, adsorption by the fouling layer and membrane intrinsic sorption. Copyright © 2017 Elsevier B.V. All rights reserved.

Interfaces in La2NiO4- La2CuO4 superlattices

NASA Astrophysics Data System (ADS)

Smadici, S.; Lee, J. C. T.; Wang, S.; Abbamonte, P.; Logvenov, G.; Gozar, A.; Bozovic, I.

2009-03-01

Ni substitution on Cu sites in underdoped La2-xSrxCuO4 quickly restores Neel order. This was attributed to strong interaction between the Ni and doped holes. An open question was whether the additional Ni empty orbital or the different spin on Ni sites was at the origin of this strong interaction. We have addressed this problem with resonant soft x-ray scattering on a La2NiO4- La2CuO4 heterostructure. La2NiO4 and La2CuO4 have close lattice structures and electronic configurations. However, the x-ray scattering contrast between superlattice layers is greatly enhanced at soft x-ray resonant energies. Based on our measurements at the O K, La M, Cu L and Ni L edges a model of the charge, orbital and spin structures in these superlattices will be presented with a special emphasis on the interface region. This work was supported by Grants. DE-FG02- 06ER46285, DE-AC02-98CH10886, MA-509-MACA, DE-FG02-07ER46453 and DE-FG02-07ER46471.

Electrical characteristics for Sn-Ag-Cu solder bump with Ti/Ni/Cu under-bump metallization after temperature cycling tests

NASA Astrophysics Data System (ADS)

Shih, T. I.; Lin, Y. C.; Duh, J. G.; Hsu, Tom

2006-10-01

Lead-free solder bumps have been widely used in current flip-chip technology (FCT) due to environmental issues. Solder joints after temperature cycling tests were employed to investigate the interfacial reaction between the Ti/Ni/Cu under-bump metallization and Sn-Ag-Cu solders. The interfacial morphology and quantitative analysis of the intermetallic compounds (IMCs) were obtained by electron probe microanalysis (EPMA) and field emission electron probe microanalysis (FE-EPMA). Various types of IMCs such as (Cu1-x,Agx)6Sn5, (Cu1-y,Agy)3Sn, and (Ag1-z,Cuz)3Sn were observed. In addition to conventional I-V measurements by a special sample preparation technique, a scanning electron microscope (SEM) internal probing system was introduced to evaluate the electrical characteristics in the IMCs after various test conditions. The electrical data would be correlated to microstructural evolution due to the interfacial reaction between the solder and under-bump metallurgy (UBM). This study demonstrated the successful employment of an internal nanoprobing approach, which would help further understanding of the electrical behavior within an IMC layer in the solder/UBM assembly.

Development and characterization of laser surface cladding (Ti,W)C reinforced Ni-30Cu alloy composite coating on copper

NASA Astrophysics Data System (ADS)

Yan, Hua; Zhang, Peilei; Yu, Zhishui; Li, Chonggui; Li, Ruidi

2012-07-01

To improve the wear resistance of copper components, laser surface cladding (LSC) was applied to deposit (Ti,W)C reinforced Ni-30Cu alloy composite coating on copper using a cladding interlayer of Ni-30Cu alloy by Nd:YAG laser. The microstructure and phases of the composite coating were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray energy dispersive microanalysis (EDX). Microhardness tester and pin-on-disc wear tester were employed to evaluate the hardness and dry-sliding wear resistance. The results show that crack-free composite coating with metallurgical bonding to the copper substrate is obtained. Phases identified in the (Ti,W)C-reinforced Ni-30Cu alloy composite layer are composed of TiWC2 reinforcements and (Ni,Cu) solid solution. TiWC2 reinforcements are distributed uniformly in the (Ni,Cu) solid solution matrix with dendritic morphology in the upper region and with particles in the mid-lower region. The microhardness and wear properties of the composite coating are improved significantly in comparison to the as-received copper substrate due to the addition of 50 wt% (Ti,W)C multicarbides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Kuaibing, E-mail: wangkb@njau.edu.cn; State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Nanjing University, Nanjing 210093; Lv, Bo

Hollow CuO/Co{sub 3}O{sub 4} hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co{sub 3}O{sub 4} hybrids had higher capacitance and lower charge transfer resistance than bare Co{sub 3}O{sub 4} nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitancemore » of the CuO/Co{sub 3}O{sub 4} hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g{sup −1} and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s{sup −1}. - Graphical abstract: Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized and display a peculiar synergetic effect on the resulting performances, which can further be evaluated and confirmed by series of electrochemical measurements. - Highlights: • Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized from bimetallic-Schiff base polymer precursors. • The capacitance of the CuO/Co{sub 3}O{sub 4} hybrids keeps a growth tendency after 2000 cycles. • A synergetic effect is found for the hybrids in electrochemical energy storage process.« less

Dynamic XPS measurements of ultrathin polyelectrolyte films containing antibacterial Ag–Cu nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taner-Camcı, Merve; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr

Ultrathin films consisting of polyelectrolyte layers prepared by layer-by-layer deposition technique and containing also Ag and Cu nanoparticles exhibit superior antibacterial activity toward Escherichia coli. These films have been investigated with XPS measurements under square wave excitation at two different frequencies, in order to further our understanding about the chemical/physical nature of the nanoparticles. Dubbed as dynamical XPS, such measurements bring out similarities and differences among the surface structures by correlating the binding energy shifts of the corresponding XPS peaks. Accordingly, it is observed that the Cu2p, Ag3d of the metal nanoparticles, and S2p of cysteine, the stabilizer and themore » capping agent, exhibit similar shifts. On the other hand, the C1s, N1s, and S2p peaks of the polyelectrolyte layers shift differently. This finding leads us the claim that the Ag and Cu atoms are in a nanoalloy structure, capped with cystein, as opposed to phase separated entities.« less

Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

NASA Astrophysics Data System (ADS)

Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

2018-02-01

Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

NASA Astrophysics Data System (ADS)

Kurt, Huseyin

2005-08-01

We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While most technical applications of CIMS require low switching currents, some, like read-heads, require high switching currents. We show that use of a synthetic antiferromagnet can increase the switching current. Manschot et al. recently predicted that the positive critical current for switching from P to AP could be reduced by up to a factor of five by using asymmetric current leads. In magnetically uncoupled samples, we find that highly asymmetric current leads do not significantly reduce the switching current. A CIMS equation given by Katine et al. predicts that lowering the demagnetization field should reduce the switching current. To test this prediction, we compare switching currents for Co/Au/Co(t)/Au nanopillars with t = 1 to 4 nm (where the easy axis should be normal to the layer planes at least for t = 1 and 2 nm) with those for Co/Cu/Co(t)/Au nanopillars (where the easy axis should be in the layer planes). We do not find significant differences in switching currents for the two systems.

Migration of trace elements from pyrite tailings in carbonate soils.

PubMed

Dorronsoro, C; Martin, F; Ortiz, I; García, I; Simón, M; Fernández, E; Aguilar, J; Fernández, J

2002-01-01

In the carbonate soils contaminated by a toxic spill from a pyrite mine (Aznalcóllar, southern Spain), a study was made of a thin layer (thickness = 4 mm) of polluted soil located between the pyrite tailings and the underlying soil. This layer, reddish-yellow in color due to a high Fe content, formed when sulfates (from the oxidation of sulfides) infiltrated the soil, causing acidification (to pH 5.6 as opposed to 8.0 of unaffected soil) and pollution (in Zn, Cu, As, Pb, Co, Cd, Sb, Bi, Tl, and In). The less mobile elements (As, Bi, In, Pb, Sb, and Tl) concentrated in the uppermost part of the reddish-yellow layer, with concentration decreasing downward. The more mobile elements (Co, Cd, Zn, and Cu) tended to precipitate where the pH was basic, toward the bottom of the layer or in the upper part of the underlying soil. The greatest accumulations occurred within the first 6 mm in overall soil depth, and were negligible below 15 mm. In addition, the acidity of the solution from the tailings degraded the minerals of the clay fraction of the soils, both the phyllosilicates as well as the carbonates. Also, within the reddish-yellow layer, gypsum formed autigenically, together with complex salts of sulfates of Fe, Al, Zn, Ca, and Mn, jarosite, and oxihydroxides of Fe.

Lattice dynamics and thermal transport in multiferroic CuCrO2

NASA Astrophysics Data System (ADS)

Bansal, Dipanshu; Niedziela, Jennifer L.; May, Andrew F.; Said, Ayman; Ehlers, Georg; Abernathy, Douglas L.; Huq, Ashfia; Kirkham, Melanie; Zhou, Haidong; Delaire, Olivier

2017-02-01

Inelastic neutron and x-ray scattering measurements of phonons and spin waves were performed in the delafossite compound CuCrO2 over a wide range of temperature, and complemented with first-principles lattice dynamics simulations. The phonon dispersions and density of states are well reproduced by our density functional calculations, and reveal a strong anisotropy of Cu vibrations, which exhibit low-frequency modes of large amplitude parallel to the basal plane of the layered delafossite structure. The low frequency in-plane modes also show a systematic temperature dependence of neutron and x-ray scattering intensities. In addition, we find that spin fluctuations persist above 300 K, far above the Néel temperature for long-range antiferromagnetic order, TN≃24 K . Our modeling of the thermal conductivity, based on our phonon measurements and simulations, reveals a significant anisotropy and indicates that spin fluctuations above TN constitute an important source of phonon scattering, considerably suppressing the thermal conductivity compared to that of the isostructural but nonmagnetic compound CuAlO2.

Electromigration Critical Product to Measure Effect of Underfill Material in Suppressing Bi Segregation in Sn-58Bi Solder

NASA Astrophysics Data System (ADS)

Zhao, Xu; Takaya, Satoshi; Muraoka, Mikio

2017-08-01

Recently, we detected length-dependent electromigration (EM) behavior in Sn-58Bi (SB) solder and revealed the existence of Bi back-flow, which retards EM-induced Bi segregation and is dependent on solder length. The cause of the back-flow is attributed to an oxide layer formed on the SB solder. At present, underfill (UF) material is commonly used in flip-chip packaging as filler between chip and substrate to surround solder bumps. In this study, we quantitatively investigated the effect of UF material as a passivation layer on EM in SB solder strips. EM tests on SB solder strips with length of 50 μm, 100 μm, and 150 μm were conducted simultaneously. Some samples were coated with commercial thermosetting epoxy UF material, which acted as a passivation layer on the Cu-SB-Cu interconnections. The value of the critical product for SB solder was estimated to be 38 A/cm to 43 A/cm at 353 K to 373 K without UF coating and 59 A/cm at 373 K with UF coating. The UF material acting as a passivation layer suppressed EM-induced Bi segregation and increased the threshold current density by 37% to 55%. However, at very high current density, this effect became very slight. In addition, Bi atoms can diffuse to the anode side through the Sn phase, hence addition of microelements to the Sn phase to form obstacles, such as intermetallic compounds, may retard Bi segregation in SB solder.

Quantification of elemental area densities in multiple metal layers (Au/Ni/Cu) on a Cr-coated quartz glass substrate for certification of NMIJ CRM 5208-a.

PubMed

Ariga, Tomoko; Zhu, Yanbei; Ito, Mika; Takatsuka, Toshiko; Terauchi, Shinya; Kurokawa, Akira; Inagaki, Kazumi

2018-04-01

Area densities of Au/Ni/Cu layers on a Cr-coated quartz substrate were characterized to certify a multiple-metal-layer certified reference material (NMIJ CRM5208-a) that is intended for use in the analysis of the layer area density and the thickness by an X-ray fluorescence spectrometer. The area densities of Au/Ni/Cu layers were calculated from layer mass amounts and area. The layer mass amounts were determined by using wet chemical analyses, namely inductively coupled plasma mass spectrometry (ICP-MS), isotope-dilution (ID-) ICP-MS, and inductively coupled plasma optical emission spectrometry (ICP-OES) after dissolving the layers with diluted mixture of HCl and HNO 3 (1:1, v/v). Analytical results of the layer mass amounts obtained by the methods agreed well with each another within their uncertainty ranges. The area of the layer was determined by using a high-resolution optical scanner calibrated by Japan Calibration Service System (JCSS) standard scales. The property values of area density were 1.84 ± 0.05 μg/mm 2 for Au, 8.69 ± 0.17 μg/mm 2 for Ni, and 8.80 ± 0.14 μg/mm 2 for Cu (mean ± expanded uncertainty, coverage factor k = 2). In order to assess the reliability of these values, the density of each metal layer calculated from the property values of the area density and layer thickness measured by using a scanning electron microscope were compared with available literature values and good agreement between the observed values and values obtained in previous studies.

Conditions and mechanisms for the formation of nano-sized Delafossite (CuFeO2) at temperatures ≤90 °C in aqueous solution

NASA Astrophysics Data System (ADS)

John, Melanie; Heuss-Aßbichler, Soraya; Ullrich, Aladin

2016-02-01

In this study, we present the mechanism of CuFeO2 formation in aqueous solution at low temperatures ≤90 °C, using sulfate salts as reactants. Furthermore, we demonstrate the influence of experimental conditions (alkalization, reaction and ageing temperature and time) on the synthesized nanoparticles. In all cases, GR-SO4, a Fe(II-III) layered double hydroxysulphate (Fe2+4Fe3+2(OH)12·SO4) and Cu2O precipitate first. During further OH- supply GR-SO4 oxidizes and forms Fe10O14(OH)2, Cu2O and CuFeO2 crystals. Due to the high pH further CuFeO2 crystals grow at the cost of the unstable intermediate products. The reaction rate increases with increasing ageing temperature, reaction pH and, in particular, NaOH concentrations in the solution. As a result, highly crystalline CuFeO2 (3R and 2H polytypes) nanoparticles showing hexagonal morphology can be synthesized at 70 °C within 10 h or at 50 °C within 1 week. The formation of 2H polytype is favored by additional OH- supply during the pH-stat time and rather low temperatures.

Stable aqueous based Cu nanoparticle ink for printing well-defined highly conductive features on a plastic substrate.

PubMed

Jeong, Sunho; Song, Hae Chun; Lee, Won Woo; Lee, Sun Sook; Choi, Youngmin; Son, Wonil; Kim, Eui Duk; Paik, Choon Hoon; Oh, Seok Heon; Ryu, Beyong-Hwan

2011-03-15

With the aim of inkjet printing highly conductive and well-defined Cu features on plastic substrates, aqueous based Cu ink is prepared for the first time using water-soluble Cu nanoparticles with a very thin surface oxide layer. Owing to the specific properties, high surface tension and low boiling point, of water, the aqueous based Cu ink endows a variety of advantages over conventional Cu inks based on organic solvents in printing narrow conductive patterns without irregular morphologies. It is demonstrated how the design of aqueous based ink affects the basic properties of printed conductive features such as surface morphology, microstructure, conductivity, and line width. The long-term stability of aqueous based Cu ink against oxidation is analyzed through an X-ray photoelectron spectroscopy (XPS) based investigation on the evolution of the surface oxide layer in the aqueous based ink.

Enhanced hydrothermal stability of Cu-ZSM-5 catalyst via surface modification in the selective catalytic reduction of NO with NH3

NASA Astrophysics Data System (ADS)

Zhang, Tao; Shi, Juan; Liu, Jian; Wang, Daxi; Zhao, Zhen; Cheng, Kai; Li, Jianmei

2016-07-01

The surface of Cu-ZSM-5 catalyst was modified by chemical liquid deposition (CLD) of tetraethoxysilane (TEOS) for enhancing its hydrothermal stability in the selective catalytic reduction of NO with NH3. After hydrothermal aging at 750 °C for 13 h, the catalytic performance of Cu-ZSM-5-Aged catalyst was significantly reduced for NO reduction in the entire temperature range, while that of Cu-ZSM-5-CLD-Aged catalyst was affected very little. The characterization results indicated that an inert silica layer was deposited on the surface of Cu-ZSM-5 and formed a protective layer, which prevents the detachment of Cu2+ from ZSM-5 ion-exchange positions and the dealumination of zeolite during the hydrothermal aging process. Based on the data it is hypothesized to be the primary reason for the high hydrothermal stability of Cu-ZSM-5-CLD catalyst.

Enhancement in electrical conductivity of pastes containing submicron Ag-coated Cu filler with palmitic acid surface modification

NASA Astrophysics Data System (ADS)

Choi, Eun Byeol; Lee, Jong-Hyun

2017-09-01

The fabrication and applied use of submicron Ag-coated Cu (Cu@Ag) particles as a filler material for epoxy-based conductive pastes having the advantages of a lower material cost and antioxidation behavior were studied. Submicron Cu@Ag particles were successfully prepared and surface-modified using palmitic acid. Diffuse reflectance infrared Fourier transform spectroscopy and thermogravimetric differential scanning calorimetry results indicated the formation of an organic layer by the chemical interaction between the Cu@Ag surface and palmitic acid and the survival of the organic layer after treatment at 160 °C for 3 h in air. The printed pastes containing both commercial micron Cu@Ag flakes and the fabricated submicron Cu@Ag particles showed a greatly reduced electrical resistivity (4.68 × 10-4 Ω cm) after surface modification compared to an initial value of 1.85 × 10-3 Ω cm when cured.

Theoretical Insights into a CO Dimerization Mechanism in CO2 Electroreduction.

PubMed

Montoya, Joseph H; Shi, Chuan; Chan, Karen; Nørskov, Jens K

2015-06-04

In this work, we present DFT simulations that demonstrate the ability of Cu to catalyze CO dimerization in CO2 and CO electroreduction. We describe a previously unreported CO dimer configuration that is uniquely stabilized by a charged water layer on both Cu(111) and Cu(100). Without this charged water layer at the metal surface, the formation of the CO dimer is prohibitively endergonic. Our calculations also demonstrate that dimerization should have a lower activation barrier on Cu(100) than Cu(111), which, along with a more exergonic adsorption energy and a corresponding higher coverage of *CO, is consistent with experimental observations that Cu(100) has a high activity for C-C coupling at low overpotentials. We also demonstrate that this effect is present with cations other than H(+), a finding that is consistent with the experimentally observed pH independence of C2 formation on Cu.

Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

2016-10-01

We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

Effect of Substrate Composition on Whisker Growth in Sn Coatings

NASA Astrophysics Data System (ADS)

Jagtap, Piyush; Ramesh Narayan, P.; Kumar, Praveen

2018-07-01

Whisker growth was studied in Sn coatings deposited on three different substrates, namely pure Cu, brass (Cu-35 wt.% Zn) and pure Ni. Additionally, the effect of a Ni under-layer (electro- or sputter-deposited and placed between the Sn coating and the substrate) on whisker growth was also studied. It was observed that the substrate composition and placement of under-layers significantly affected the whisker growth in Sn coating by altering the growth rate and the morphology of the interfacial intermetallic compounds (IMC). Whisker propensity was the highest when Sn coatings were deposited directly on the brass substrate, while it was completely inhibited for at least a year when the coatings were deposited on either pure Ni or brass with a Ni under-layer. Bulk and surface stress measurements revealed that the surface of the Sn coatings on Ni, irrespective of whether it was in bulk or under-layer form, remained more compressive as compared to the bulk, throughout the observation period. Therefore, a negative out-of-plane stress gradient, which is crucial for whisker growth, could never be established in these samples. Interestingly, a phenomenon of through-thickness columnar voiding (reverse of whiskering) was observed in the Sn coatings deposited on Ni. The origin of this phenomenon is discussed.

Effect of Substrate Composition on Whisker Growth in Sn Coatings

NASA Astrophysics Data System (ADS)

Jagtap, Piyush; Ramesh Narayan, P.; Kumar, Praveen

2018-04-01

Whisker growth was studied in Sn coatings deposited on three different substrates, namely pure Cu, brass (Cu-35 wt.% Zn) and pure Ni. Additionally, the effect of a Ni under-layer (electro- or sputter-deposited and placed between the Sn coating and the substrate) on whisker growth was also studied. It was observed that the substrate composition and placement of under-layers significantly affected the whisker growth in Sn coating by altering the growth rate and the morphology of the interfacial intermetallic compounds (IMC). Whisker propensity was the highest when Sn coatings were deposited directly on the brass substrate, while it was completely inhibited for at least a year when the coatings were deposited on either pure Ni or brass with a Ni under-layer. Bulk and surface stress measurements revealed that the surface of the Sn coatings on Ni, irrespective of whether it was in bulk or under-layer form, remained more compressive as compared to the bulk, throughout the observation period. Therefore, a negative out-of-plane stress gradient, which is crucial for whisker growth, could never be established in these samples. Interestingly, a phenomenon of through-thickness columnar voiding (reverse of whiskering) was observed in the Sn coatings deposited on Ni. The origin of this phenomenon is discussed.

Carbon tolerance of Ni-Cu and Ni-Cu/YSZ sub-μm sized SOFC thin film model systems

NASA Astrophysics Data System (ADS)

Götsch, Thomas; Schachinger, Thomas; Stöger-Pollach, Michael; Kaindl, Reinhard; Penner, Simon

2017-04-01

Thin films of YSZ, unsupported Ni-Cu 1:1 alloy phases and YSZ-supported Ni-Cu 1:1 alloy solutions have been reproducibly prepared by magnetron sputter deposition on Si wafers and NaCl(001) single crystal facets at two selected substrate temperatures of 298 K and 873 K. Subsequently, the layer properties of the resulting sub-μm thick thin films as well as the tendency towards carbon deposition following treatment in pure methane at 1073 K has been tested comparatively. Well-crystallized structures of cubic YSZ, cubic NiCu and cubic NiCu/YSZ have been obtained following deposition at 873 K on both substrates. Carbon is deposited on all samples following the trend Ni-Cu (1:1) = Ni-Cu (1:1)/YSZ > pure YSZ, indicating that at least the 1:1 composition of layered Ni-Cu alloy phases is not able to suppress the carbon deposition completely, rendering it unfavorable for usage as anode component in sub-μm sized fuel cells. It is shown that surfaces with a high Cu/Ni ratio nevertheless prohibit any carbon deposition.

Gas Suppression via Copper Interlayers in Magnetron Sputtered Al-Cu2O Multilayers.

PubMed

Kinsey, Alex H; Slusarski, Kyle; Sosa, Steven; Weihs, Timothy P

2017-07-05

The use of thin-foil, self-propagating thermite reactions to bond components successfully depends on the ability to suppress gas generation and avoid pore formation during the exothermic production of brazes. To study the mechanisms of vapor production in diluted thermites, thin film multilayer Al-Cu-Cu 2 O-Cu foils are produced via magnetron sputtering, where the Cu layer thickness is systematically increased from 0 to 100 nm in 25 nm increments. The excess Cu layers act as diffusion barriers, limiting the transport of oxygen from the oxide to the Al fuel, as determined by slow heating differential scanning calorimetry experiments. Furthermore, by adding excess Cu to the system, the temperature of the self-propagating thermite reactions drops below the boiling point of Cu, eliminating the metal vapor production. It is determined that Cu vapor production can be eliminated by increasing the Cu interlayer thickness above 50 nm. However, the porous nature of the final products suggests that only metal vapor production is suppressed via dilution. Gas generation via oxygen release is still capable of producing a porous reaction product.

Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

NASA Astrophysics Data System (ADS)

Devulder, Wouter; Opsomer, Karl; Franquet, Alexis; Meersschaut, Johan; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Detavernier, Christophe

2014-02-01

In this paper, we investigate the influence of the carbon content on the Cu-Te phase formation and on the resistive switching behavior in carbon alloyed Cu0.6Te0.4 based conductive bridge random access memory (CBRAM) cells. Carbon alloying of copper-tellurium inhibits the crystallization, while attractive switching behavior is preserved when using the material as Cu-supply layer in CBRAM cells. The phase formation is first investigated in a combinatorial way. With increasing carbon content, an enlargement of the temperature window in which the material stays amorphous was observed. Moreover, if crystalline phases are formed, subsequent phase transformations are inhibited. The electrical switching behavior of memory cells with different carbon contents is then investigated by implementing them in 580 μm diameter dot TiN/Cu0.6Te0.4-C/Al2O3/Si memory cells. Reliable switching behavior is observed for carbon contents up to 40 at. %, with a resistive window of more than 2 orders of magnitude, whereas for 50 at. % carbon, a higher current in the off state and only a small resistive window are present after repeated cycling. This degradation can be ascribed to the higher thermal and lower drift contribution to the reset operation due to a lower Cu affinity towards the supply layer, leading cycle-after-cycle to an increasing amount of Cu in the switching layer, which contributes to the current. The thermal diffusion of Cu into Al2O3 under annealing also gives an indication of the Cu affinity of the source layer. Time of flight secondary ion mass spectroscopy was used to investigate this migration depth in Al2O3 before and after annealing, showing a higher Cu, Te, and C migration for high carbon contents.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to stronglymore » favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.« less

Copper leaching of MSWI bottom ash co-disposed with refuse: effect of short-term accelerated weathering.

PubMed

Su, Lianghu; Guo, Guangzhai; Shi, Xinlong; Zuo, Minyu; Niu, Dongjie; Zhao, Aihua; Zhao, Youcai

2013-06-01

Co-disposal of refuse with municipal solid waste incinerator (MSWI) bottom ash (IBA) either multi-layered as landfill cover or mixed with refuse could pose additional risk to the environment because of enhanced leaching of heavy metals, especially Cu. This study applied short-term accelerated weathering to IBA, and monitored the mineralogical and chemical properties of IBA during the weathering process. Cu extractability of the weathered IBA was then evaluated using standard leaching protocols (i.e. SPLP and TCLP) and co-disposal leaching procedure. The results showed that weathering had little or no beneficial effect on Cu leaching in SPLP and TCLP, which can be explained by the adsorption and complexation of Cu with DOM. However, the Cu leaching of weathered IBA was reduced significantly when situated in fresh simulated landfill leachate. This was attributed to weakening Cu complexation with fulvic acid or hydrophilic fractions and/or intensifying Cu absorption to neoformed hydr(oxide) minerals in weathered IBA. The amount of total leaching Cu and Cu in free or labile complex fraction (the fraction with the highest mobility and bio-toxicity) of the 408-h weathered IBA were remarkably decreased by 86.3% and 97.6% in the 15-day co-disposal leaching test. Accelerated weathering of IBA may be an effective pretreatment method to decrease Cu leaching prior to its co-disposal with refuse. Copyright © 2013 Elsevier Ltd. All rights reserved.

Gasdynamic simulations of the solar wind interaction with Venus - Boundary layer formation

NASA Astrophysics Data System (ADS)

McGary, J. E.

1993-05-01

A 2D gasdynamic simulation of the mass-loaded solar wind flow around the dayside of Venus is presented. For average ionopause conditions near 300 km, the simulations show that mass loading from the pickup of oxygen ions produces a boundary layer of finite thickness along the ionopause. Within this layer and toward the ionopause, the temperature decreases and the total mass density increases significantly. Furthermore, there is a shear in the bulk flow velocity across the boundary layer, such that the tangential flow decreases in speed as the ionopause is approached and remains low along the ionopause which is consistent with Pioneer Venus observations. Numerical simulations are carried out for various mass addition rates and demonstrate that the boundary layer develops when oxygen ion production exceeds approximately 2 x 10 exp 5/cu m per s.

Al and Si Alloying Effect on Solder Joint Reliability in Sn-0.5Cu for Automotive Electronics

NASA Astrophysics Data System (ADS)

Hong, Won Sik; Oh, Chulmin; Kim, Mi-Song; Lee, Young Woo; Kim, Hui Joong; Hong, Sung Jae; Moon, Jeong Tak

2016-12-01

To suppress the bonding strength degradation of solder joints in automotive electronics, we proposed a mid-temperature quaternary Pb-free Sn-0.5Cu solder alloy with minor Pd, Al, Si and Ge alloying elements. We manufactured powders and solder pastes of Sn-0.5Cu-(0.01,0.03)Al-0.005Si-(0.006-0.007)Ge alloys ( T m = 230°C), and vehicle electronic control units used for a flame-retardant-4 printed circuit board with an organic solderability preservative finish were assembled by a reflow soldering process. To investigate the degradation properties of solder joints used in engine compartments, thermal cycling tests were conducted from -40°C to 125°C (10 min dwell) for 1500 cycles. We also measured the shear strength of the solder joints in various components and observed the microstructural evolution of the solder joints. Based on these results, intermetallic compound (IMC) growth at the solder joints was suppressed by minor Pd, Al and Si additions to the Sn-0.5Cu alloy. After 1500 thermal cycles, IMC layers thicknesses for 100 parts per million (ppm) and 300 ppm Al alloy additions were 6.7 μm and 10 μm, compared to the as-reflowed bonding thicknesses of 6 μm and 7 μm, respectively. Furthermore, shear strength degradation rates for 100 ppm and 300 ppm Al(Si) alloy additions were at least 19.5%-26.2%. The cause of the improvement in thermal cycling reliability was analyzed using the (Al,Cu)-Sn, Si-Sn and Al-Sn phases dispersed around the Cu6Sn5 intermetallic at the solder matrix and bonding interfaces. From these results, we propose the possibility of a mid-temperature Sn-0.5Cu(Pd)-Al(Si)-Ge Pb-free solder for automotive engine compartment electronics.

Signal processing and analysis for copper layer thickness measurement within a large variation range in the CMP process.

PubMed

Li, Hongkai; Zhao, Qian; Lu, Xinchun; Luo, Jianbin

2017-11-01

In the copper (Cu) chemical mechanical planarization (CMP) process, accurate determination of a process reaching the end point is of great importance. Based on the eddy current technology, the in situ thickness measurement of the Cu layer is feasible. Previous research studies focus on the application of the eddy current method to the metal layer thickness measurement or endpoint detection. In this paper, an in situ measurement system, which is independently developed by using the eddy current method, is applied to the actual Cu CMP process. A series of experiments are done for further analyzing the dynamic response characteristic of the output signal within different thickness variation ranges. In this study, the voltage difference of the output signal is used to represent the thickness of the Cu layer, and we can extract the voltage difference variations from the output signal fast by using the proposed data processing algorithm. The results show that the voltage difference decreases as thickness decreases in the conventional measurement range and the sensitivity increases at the same time. However, it is also found that there exists a thickness threshold, and the correlation is negative, when the thickness is more than the threshold. Furthermore, it is possible that the in situ measurement system can be used within a larger Cu layer thickness variation range by creating two calibration tables.

Physical properties of spin-valve films grown on naturally oxidized metal nano-oxide surfaces

NASA Astrophysics Data System (ADS)

Mao, Ming; Cerjan, Charlie; Kools, Jacques

2002-05-01

The physical properties of spin-valve films NiFe 25 Å/CoFe 10 Å/Cu(tCu)/CoFe 30 Å/IrMn 70 Å/Ta 20 Å with graded Cu layer thickness (tCu=18-45 Å) grown on the surface of metal nano-oxide layers (NOLs) were studied. The NOLs were formed from ultrathin Al, Cr, Cu, Nb, Ta, CoFe, NiFe, and NiFeCr layers by natural oxidation. The growth of the spin-valve films on NOLs has led to an enhancement in giant magnetoresistance value by up to 48%. A corresponding reduction in minimum film resistance by over 10% confirms that this enhancement originates from an increase in the mean free path of spin-polarized electrons due to the resultant specular reflection at the nano-oxide surfaces. A wide spectrum of oscillatory interlayer exchange coupling dependence on tCu for these NOL-bearing films suggests that a specular nano-oxide surface does not necessarily result in a smoother multilayer structure. The observation of an enhanced exchange biasing among these spin-valve films appears in contradiction to the observed deterioration of their crystallographic quality. As an important application, TaOx, CrOx, and NbOx could be employed as an alternative to AlOx as the barrier layer for magnetic tunnel junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

Detailed low-energy electron diffraction analysis of the (4×4) surface structure of C60 on Cu(111): Seven-atom-vacancy reconstruction

NASA Astrophysics Data System (ADS)

Xu, Geng; Shi, Xing-Qiang; Zhang, R. Q.; Pai, Woei Wu; Jeng, H. T.; Van Hove, M. A.

2012-08-01

A detailed and exhaustive structural analysis by low-energy electron diffraction (LEED) is reported for the C60-induced reconstruction of Cu(111), in the system Cu(111) + (4 × 4)-C60. A wide LEED energy range allows enhanced sensitivity to the crucial C60-metal interface that is buried below the 7-Å-thick molecular layer. The analysis clearly favors a seven-Cu-atom vacancy model (with Pendry R-factor Rp = 0.376) over a one-Cu-atom vacancy model (Rp = 0.608) and over nonreconstructed models (Rp = 0.671 for atop site and Rp = 0.536 for hcp site). The seven-Cu-atom vacancy forms a (4 × 4) lattice of bowl-like holes. In each hole, a C60 molecule can nestle by forming strong bonds (shorter than 2.30 Å) between 15 C atoms of the molecule and 12 Cu atoms of the outermost and second Cu layers.

Electro deposition of cuprous oxide for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shahrestani, Seyed Mohammad

p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the electro-deposition of Cu2O n-type were identified consistently for the first time. The electro-deposition electrolyte is based 0.01M acetate copper and 0.1 M sodium acetate: it has a pH between 6.3 and 4, a potential of from 0 to -0.25 V vs. Ag / AgCl and a temperature of 60oC. The optimum annealing temperature of the n-type Cu2O layers is between 120-150oC for the annealing time of 30 to 120 minutes. Resistivity of the n-type films varies between 5 x 103 and 5 x 104 at pH 4 to pH 6.4. We have shown for the first time that bubbling nitrogen gas in the electroplating cell improves significantly the spectral response of the electro-deposited n-type thin film. A two steps electro-deposition process was implemented to make the p-n homojunction cuprous oxide. Indium tin oxide (ITO) was used as a transparent conductive oxide substrate. A p-Cu2O was electrodeposited on ITO. After heat treatment a thin film layer of n-Cu 2O was electrodeposited on top of previous layer. The performance of a p-n homojunction photovoltaic solar cell of Cu2O was determined. The short-circuit current and the open circuit voltage were respectively determined to be as 0.35 volts and 235 muA/cm2. The fill factor (FF) and conversion efficiency of light into electricity were respectively measured to be 0.305 and 0.082%.

Uncovering a new quasi-2D CuO2 plane between the YBa2Cu3O7 and CeO2 buffer layer of coated conductors

NASA Astrophysics Data System (ADS)

Li, Zhi-Xin; Cao, Jin-Jin; Gou, Xiao-Fan; Wang, Tian-Ge; Xue, Feng

2018-01-01

We report a discovery of the quasi-two-dimensional (quasi-2D) CuO2 plane between the superconductor YBa2Cu3O7 (YBCO) and CeO2 buffer layer (mostly used in the fabrication) of coated conductors through the atomistic computer simulations with the molecular dynamics (MD) and first-principle calculations. For an YBCO coated conductor with multilayer structures, the buffer layers deposited onto a substrate are mainly considered to transfer a strong biaxial texture from the substrate to the YBCO layer. To deeply understand the tuning mechanism of the texture transfer, exploring the complete atomic-level picture of the structure between the YBa2Cu3O7/CeO2 interfaces is firstly required. However, the related observation data have not been available due to some big challenges of experimental techniques. With the MD simulations, having tested the accuracy of the potential functions for the YBa2Cu3O7/CeO2 interface, we constructed a total of 54 possible atom stacking models of the interface and identified its most appropriate and stable structure according to the criterion of the interface adhesion energy and the coherent characterization. To further verify the stability of the identified structure, we performed the first-principle calculations to obtain the adhesion energy and developed the general knowledge of the interface structure. Finally, a coherent interface formed with a new built quasi-2D CuO2 plane that is structurally similar to the CuO2 plane inside bulk YBCO was determined.

Pentavalent and tetravalent uranium selenides, Tl3Cu4USe6 and Tl2Ag2USe4: syntheses, characterization, and structural comparison to other layered actinide chalcogenide compounds.

PubMed

Bugaris, Daniel E; Choi, Eun Sang; Copping, Roy; Glans, Per-Anders; Minasian, Stefan G; Tyliszczak, Tolek; Kozimor, Stosh A; Shuh, David K; Ibers, James A

2011-07-18

The compounds Tl(3)Cu(4)USe(6) and Tl(2)Ag(2)USe(4) were synthesized by the reaction of the elements in excess TlCl at 1123 K. Both compounds crystallize in new structure types, in space groups P2(1)/c and C2/m, respectively, of the monoclinic system. Each compound contains layers of USe(6) octahedra and MSe(4) (M = Cu, Ag) tetrahedra, separated by Tl(+) cations. The packing of the octahedra and the tetrahedra within the layers is compared to the packing arrangements found in other layered actinide chalcogenides. Tl(3)Cu(4)USe(6) displays peaks in its magnetic susceptibility at 5 and 70 K. It exhibits modified Curie-Weiss paramagnetic behavior with an effective magnetic moment of 1.58(1) μ(B) in the temperature range 72-300 K, whereas Tl(2)Ag(2)USe(4) exhibits modified Curie-Weiss paramagnetic behavior with μ(eff) = 3.4(1) μ(B) in the temperature range 100-300 K. X-ray absorption near-edge structure (XANES) results from scanning transmission X-ray spectromicroscopy confirm that Tl(3)Cu(4)USe(6) has Se bonding characteristic of discrete Se(2-) units, Cu bonding generally representative of Cu(+), and U bonding consistent with a U(4+) or U(5+) species. On the basis of these measurements, as well as bonding arguments, the formal oxidation states for U may be assigned as +5 in Tl(3)Cu(4)USe(6) and +4 in Tl(2)Ag(2)USe(4).

Structure and dynamics of shear bands in amorphous–crystalline nanolaminates

DOE PAGES

Guo, Wei; Gan, Bin; Molina-Aldareguia, Jon M.; ...

2015-08-03

In this paper, the velocities of shear bands in amorphous CuZr/crystalline Cu nanolaminates were quantified as a function of strain rate and crystalline volume fraction. A rate-dependent transition in flow response was found in a 100 nm CuZr/10 nm Cu nanolaminates. When increasing the Cu layer thickness from 10 nm to 100 nm, the instantaneous velocity of the shear band in these nanolaminates decreases from 11.2 μm/s to <~500 nm/s. Finally, atom probe tomography and transmission election microcopy observation revealed that in post-deformed pillars both grain rotation in the crystalline portion and non-diffusive crystallization in the amorphous layer affect themore » viscosity of shear bands.« less

Computational prediction of the electronic structure and optical properties of graphene-like β-CuN3.

PubMed

Zhang, Xu; Zhao, Xudong; Jing, Yu; Wu, Dihua; Zhou, Zhen

2015-12-21

Recently, a new polymorph of the highly energetic phase β-CuN3 has been synthesized. By hybrid density functional computations, we investigated the structural, electronic and optical properties of β-CuN3 bulk and layers. Due to the quantum confinement effect, the band gap of the monolayer (2.39 eV) is larger than that of the bulk (2.23 eV). The layer number affects the configuration and the band gap. β-CuN3 shows both ionic and covalent characters, and could be stable in the infrared and visible spectrum and would decompose under ultraviolet light. The results imply that bulk β-CuN3 could be used as an energetic material.

On the origins of hardness of Cu–TiN nanolayered composites

DOE PAGES

Pathak, S.; Li, N.; Maeder, X.; ...

2015-07-18

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE PAGES

Zhong, Yong; Wang, Yang; Han, Sha; ...

2016-07-12

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Yong; Wang, Yang; Han, Sha

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

Effect of Strain Rate on Joint Strength and Failure Mode of Lead-Free Solder Joints

NASA Astrophysics Data System (ADS)

Lin, Jian; Lei, Yongping; Fu, Hanguang; Guo, Fu

2018-03-01

In surface mount technology, the Sn-3.0Ag-0.5Cu solder joint has a shorter impact lifetime than a traditional lead-tin solder joint. In order to improve the impact property of SnAgCu lead-free solder joints and identify the effect of silver content on tensile strength and impact property, impact experiments were conducted at various strain rates on three selected SnAgCu based solder joints. It was found that joint failure mainly occurred in the solder material with large plastic deformation under low strain rate, while joint failure occurred at the brittle intermetallic compound layer without any plastic deformation at a high strain rate. Joint strength increased with the silver content in SnAgCu alloys in static tensile tests, while the impact property of the solder joint decreased with increasing silver content. When the strain rate was low, plastic deformation occurred with failure and the tensile strength of the Sn-3.0Ag-0.5Cu solder joint was higher than that of Sn-0.3Ag-0.7Cu; when the strain rate was high, joint failure mainly occurred at the brittle interface layer and the Sn-0.3Ag-0.7Cu solder joint had a better impact resistance with a thinner intermetallic compound layer.

Buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

Conditions and mechanisms for the formation of nano-sized Delafossite (CuFeO{sub 2}) at temperatures ≤90 °C in aqueous solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

John, Melanie, E-mail: melanie.john@min.uni-muenchen.de; Heuss-Aßbichler, Soraya; Ullrich, Aladin

In this study, we present the mechanism of CuFeO{sub 2} formation in aqueous solution at low temperatures ≤90 °C, using sulfate salts as reactants. Furthermore, we demonstrate the influence of experimental conditions (alkalization, reaction and ageing temperature and time) on the synthesized nanoparticles. In all cases, GR–SO{sub 4}, a Fe(II–III) layered double hydroxysulphate (Fe{sup 2+}{sub 4}Fe{sup 3+}{sub 2}(OH){sub 12}·SO{sub 4}) and Cu{sub 2}O precipitate first. During further OH{sup −} supply GR–SO{sub 4} oxidizes and forms Fe{sub 10}O{sub 14}(OH){sub 2}, Cu{sub 2}O and CuFeO{sub 2} crystals. Due to the high pH further CuFeO{sub 2} crystals grow at the cost of themore » unstable intermediate products. The reaction rate increases with increasing ageing temperature, reaction pH and, in particular, NaOH concentrations in the solution. As a result, highly crystalline CuFeO{sub 2} (3R and 2H polytypes) nanoparticles showing hexagonal morphology can be synthesized at 70 °C within 10 h or at 50 °C within 1 week. The formation of 2H polytype is favored by additional OH{sup −} supply during the pH-stat time and rather low temperatures. - Highlights: • We solve the formation mechanism of pure CuFeO{sub 2} using sulfates as reactants. • CuFeO{sub 2} nanoparticles crystallize on cost of green rust, Fe{sub 10}O{sub 14}(OH){sub 2} and Cu{sub 2}O. • The reaction rate increases with increasing temperature and OH- concentration. • CuFeO{sub 2} nanoparticles form at 50 °C within one week and at 70 °C within 10 h. • 2H-polytype of CuFeO{sub 2} is favored by additional NaOH supply during pH-stat-time.« less

Cu2+ ions as a paramagnetic probe to study the surface chemical modification process of layered double hydroxides and hydroxide salts with nitrate and carboxylate anions.

PubMed

Arizaga, Gregorio Guadalupe Carbajal; Mangrich, Antonio Salvio; Wypych, Fernando

2008-04-01

A layered zinc hydroxide nitrate (Zn5(OH)8(NO3)2.2H2O) and a layered double hydroxide (Zn/Al-NO3) were synthesized by coprecipitation and doped with different amounts of Cu2+ (0.2, 1, and 10 mol%), as paramagnetic probe. Although the literature reports that the nitrate ion is free (with D3h symmetry) between the layers of these two structures, the FTIR spectra of two zinc hydroxide nitrate samples show the C2v symmetry for the nitrate ion, whereas the g ||/A || value in the EPR spectra of Cu2+ is high. This fact suggests bonding of some nitrate ions to the layers of the zinc hydroxide nitrate. The zinc hydroxide nitrate was used as matrix in the intercalation reaction with benzoate, o-chlorobenzoate, and o-iodobenzoate ions. FTIR spectra confirm the ionic exchange reaction and the EPR spectroscopy reveals bonding of the organic ions to the inorganic layers of the zinc hydroxide nitrate, while the layered double hydroxides show only exchange reactions.

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

PubMed

Chin, Fun-Tat; Lin, Yu-Hsien; You, Hsin-Chiang; Yang, Wen-Luh; Lin, Li-Min; Hsiao, Yu-Ping; Ko, Chum-Min; Chao, Tien-Sheng

2014-01-01

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.

Changes in the adsorbate dipole layer with changing d-filling of the metal (II) (Co, Ni, Cu) phthalocyanines on Au(111).

PubMed

Xiao, Jie; Dowben, Peter A

2009-02-04

In combined photoemission and inverse photoemission spectroscopy studies, we observe changes in the metal phthalocyanine molecular orbital offsets with respect to the conducting gold substrate Fermi level, with the changing d-electron filling of the metal (II) (Co, Ni, Cu) phthalocyanines. The implication is that the interfacial dipole layer depends upon the choice of metal (Co, Ni, Cu) centers within the metal (II) phthalocyanines adsorbed on Au(111).

Electrodeposited Ni-Based Magnetic Mesoporous Films as Smart Surfaces for Atomic Layer Deposition: An "All-Chemical" Deposition Approach toward 3D Nanoengineered Composite Layers.

PubMed

Zhang, Jin; Quintana, Alberto; Menéndez, Enric; Coll, Mariona; Pellicer, Eva; Sort, Jordi

2018-05-02

Mesoporous Ni and Cu-Ni (Cu 20 Ni 80 and Cu 45 Ni 55 in at. %) films, showing a three-dimensional (3D) porous structure and tunable magnetic properties, are prepared by electrodeposition from aqueous surfactant solutions using micelles of P-123 triblock copolymer as structure-directing entities. Pores between 5 and 30 nm and dissimilar space arrangements (continuous interconnected networks, circular pores, corrugated mesophases) are obtained depending on the synthetic conditions. X-ray diffraction studies reveal that the Cu-Ni films have crystallized in the face-centered cubic structure, are textured, and exhibit certain degree of phase separation, particularly those with a higher Cu content. Atomic layer deposition (ALD) is used to conformally coat the mesopores of Cu 20 Ni 80 film with amorphous Al 2 O 3 , rendering multiphase "nano-in-meso" metal-ceramic composites without compromising the ferromagnetic response of the metallic scaffold. From a technological viewpoint, these 3D nanoengineered composite films could be appealing for applications like magnetically actuated micro/nanoelectromechanical systems (MEMS/NEMS), voltage-driven magneto-electric devices, capacitors, or as protective coatings with superior strength and tribological performance.

Electroless Cu Plating on Anodized Al Substrate for High Power LED.

PubMed

Rha, Sa-Kyun; Lee, Youn-Seoung

2015-03-01

Area-selective copper deposition on screen printed Ag pattern/anodized Al/Al substrate was attempted using a neutral electroless plating processes for printed circuit boards (PCBs), according to a range of variation of pH 6.5-pH 8 at 70 °C. The utilized basic electroless solution consisted of copper(II) sulfate pentahydrate, sodium phosphinate monohydrate, sodium citrate tribasic dihydrate, ammonium chloride, and nickel(II) sulfate hexahydrate. The pH of the copper plating solutions was adjusted from pH 6.5 to pH 8 using NH4OH. Using electroless plating in pH 6.5 and pH 7 baths, surface damage to the anodized Al layer hardly occurred; the structure of the plated Cu-rich films was a typical fcc-Cu, but a small Ni component was co-deposited. In electroless plating at pH 8, the surface of the anodized Al layer was damaged and the Cu film was composed of a lot of Ni and P which were co-deposited with Cu. Finally, in a pH 7 bath, we can make a selectively electroless plated Cu film on a PCB without any lithography and without surface damage to the anodized Al layer.

Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C).

PubMed

Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

2015-02-06

Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

Buffer layers on metal surfaces having biaxial texture as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

DOEpatents

Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

1995-01-01

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

DOEpatents

Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

1995-08-15

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

NASA Astrophysics Data System (ADS)

Chien, Wei-Chih; Yao, Yeong-Der; Wu, Jiann-Kuo; Lo, Chi-Kuen; Hung, Ruei-Feng; Lan, M. D.; Lin, Pang

2009-02-01

Magnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (fr)=476 kHz at room temperature (RT). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at RT and changed to 11.8 nF after annealing at 200 °C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.

Influence of chemical etching and heat-treatment on the structure and superconducting properties of YGdBCO coated conductors

NASA Astrophysics Data System (ADS)

Wang, M. J.; Wang, W. T.; Liu, L.; Huo, B. L.; Yang, X.; Cheng, C. H.; Zhao, Y.

2017-07-01

The effects of chemical etching (to remove metal stabilizer layers) and novel heat treatment process on the structure and superconducting properties of YGdBCO CCs for preparing a superconducting joint were studied. After removing the Cu stabilizer layer with the FeCl3 alcohol solution, the mixture of NH3.H2O and H2O2 was used to remove Ag stabilizer layer with various conditions such as etching temperature and time. Due to the decomposition of YGdBCO at high temperature, few secondary phases such as YGd211 and BaCuO2 were detected after partial melting. It is interested to note that these secondary phases were not detected after recrystallization at a relatively lower temperature. According to the pseudo-binary phase diagrams of Lee [1], the peritectic reaction of YGd211 was occurred and the YGd123 particle was aligned again along c-axis. Additionally, the oxygenation annealing process was indispensable to restore the degraded superconducting properties of YGdBCO CCs caused by the oxygen diffusion out of itself during heat treatment process. The above results were favorable to prepare the superconducting joint of YGdBCO CCs in our future work.

Laser Brazing Characteristics of Al to Brass with Zn-Based Filler

NASA Astrophysics Data System (ADS)

Tan, Caiwang; Liu, Fuyun; Sun, Yiming; Chen, Bo; Song, Xiaoguo; Li, Liqun; Zhao, Hongyun; Feng, Jicai

2018-05-01

Laser brazing of Al to brass in lap configuration with Zn-based filler was performed in this work. The process parameters including laser power, defocused distance were found to have a significant influence on appearance, microstructure and mechanical properties. The process parameters were optimized to be laser power of 2700 W and defocusing distance of + 40 mm from brass surface. In addition, preheating exerted great influence on wetting and spreading ability of Zn filler on brass surface. The microstructure observation showed the thickness of reaction layer (CuZn phase) at the interface of the brass side would grow with the increase in laser power and the decrease in the laser defocusing distance. Moreover, preheating could increase the spreading area of the filler metal and induced the growth of the reaction layer. The highest tensile-shear load of the joint could reach 2100 N, which was 80% of that of Al alloy base metal. All the joints fractured along the CuZn reaction layer and brass interface. The fracture morphology displayed the characteristics of the cleavage fracture when without preheating before welding, while it displayed the characteristics of the quasi-cleavage fracture with preheating before welding.

Mechanical and microstructural characterization of W–Cu FGM fabricated by one-step sintering method through PM route

NASA Astrophysics Data System (ADS)

Gupta, Rajat; Kumar, Rohit; Chaubey, A. K.; Kanpara, Shailesh; Khirwadkar, S. S.

2018-03-01

Five layer W-Cu functionally graded material (FGM) for components in nuclear fusion application was fabricated by a one-step resistance sintering process, known as spark plasma sintering (SPS). In this study effect of sintering temperature (Ts) on physical, mechanical and surface property was investigated. Detailed microstructural study revealed that the graded structure of the composite layers with varying composition from 0 to 100 wt% W and Cu in opposite directions could be well densified after the SPS process. It also indicates that the fine microstructure within functionally graded layers can be maintained because of short sintering time. The sample sintered at 1050°C shows more than 90% theoretical density, hardness greater than 239±5 Hv and excellent surface scratch resistance. The result demonstrates that SPS is promising and more suitable process for fabrication of W-Cu FGM.

Thermally driven self-healing using copper nanofiber heater

NASA Astrophysics Data System (ADS)

Lee, Min Wook; Jo, Hong Seok; Yoon, Sam S.; Yarin, Alexander L.

2017-07-01

Nano-textured transparent heaters made of copper nanofibers (CuNFs) are used to facilitate accelerated self-healing of bromobutyl rubber (BIIR). The heater and BIIR layer are separately deposited on each side of a transparent flexible polyethylene terephthalate (PET) substrate. A pre-notched crack on the BIIR layer was bridged due to heating facilitated by CuNFs. In the corrosion test, a cracked BIIR layer covered a steel substrate. An accelerated self-healing of the crack due to the transparent copper nanofiber heater facilitated an anti-corrosion protective effect of the BIIR layer.

Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

PubMed

Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

2016-05-04

As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin-filter specular spin valves

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.; Jibouri, A. A.; Zheng, Yaunkai

2002-01-01

Both a thin free layer and high magnetoresistance (MR) ratio are required in spin valves for high magnetic density recording heads. In traditional spin valve structures, reducing the free layer normally results in a reduction in MR. We report here on a spin-filter specular spin valve with structure Ta 3.5 nm/NiFe 2 nm/IrMn 6 nm/CoFe 1.5 nm/Nol/CoFe 2 nm/Cu 2.2 nm/CoFe tF/Cu tSF/Nol2/Ta 3 nm, which is demonstrated to maintain MR ratio higher than 12% even when the CoFe free layer is reduced to 1 nm. The semiclassical Boltzmann transport equation was used to simulate MR ratio. An optimized MR ratio of ˜14.5% was obtained when tF was about 1.5 nm and tSF about 1.0 nm as a result of the balance between the increase in electron mean free path difference and current shunting through conducting layer. It is found that the Cu enhancing layer not only enhances the MR ratio but also improves soft magnetic properties of CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibits a low coercivity of ˜3 Oe even after annealing at 270 °C for 7 h in a field of 1 kOe. Furthermore, the interlayer coupling field Hint between free layer and pinned layer can be controlled by balancing the Rudermann-Kittel-(Kasuya)-Yosida and magnetostatic coupling. Such a thin soft CoFe free layer is particularly attractive for high density read sensor application.

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

NASA Astrophysics Data System (ADS)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

O 1s core levels in Bi2Sr2CaCu2O8+δ single crystals

NASA Astrophysics Data System (ADS)

Parmigiani, F.; Shen, Z. X.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1991-02-01

High-quality Bi2Sr2CaCu2O8+δ superconducting single crystals, annealed at different oxygen partial pressures, have been studied using angular-resolved x-ray photoelectron spectroscopy with a resolution higher than that used in any previous study. Two states of the oxygen, separated by ~=0.7 eV, are unambiguously observed. Examining these components at different angles makes it possible to distinguish bulk from surface components. Using this capability we discover that annealing under lower oxygen partial pressure (1 atm) results in oxygen intercalation beneath the Bi-O surface layer of the crystal, whereas for higher-pressure anneals (12 atm) additional oxygen is found on the Bi-O surfaces. This steplike intercalation mechanism is also confirmed by the changes observed in the Cu and Bi core lines as a function of the annealing oxygen partial pressure.

Optimization of chemical displacement deposition of copper on porous silicon.

PubMed

Bandarenka, Hanna; Redko, Sergey; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

2012-11-01

Copper (II) sulfate was used as a source of copper to achieve uniform distribution of Cu particles deposited on porous silicon. Layers of the porous silicon were formed by electrochemical anodization of Si wafers in a mixture of HF, C3H7OH and deionized water. The well-known chemical displacement technique was modified to grow the copper particles of specific sizes. SEM and XRD analysis revealed that the outer surface of the porous silicon was covered with copper particles of the crystal orientation inherited from the planes of porous silicon skeleton. The copper crystals were found to have the cubic face centering elementary cell. In addition, the traces of Cu2O cubic primitive crystalline phases were identified. The dimensions of Cu particles were determined by the Feret's analysis of the SEM images. The sizes of the particles varied widely from a few to hundreds of nanometers. A phenomenological model of copper deposition was proposed.

Ultrahigh Strength Copper Obtained by Surface Mechanical Attrition Treatment at Cryogenic Temperature

NASA Astrophysics Data System (ADS)

Shen, Yu; Wen, Cuie; Yang, Xincheng; Pang, Yanzhao; Sun, Lele; Tao, Jingmei; Gong, Yulan; Zhu, Xinkun

2015-12-01

The purpose of this paper is to investigate the effect of dynamic recovery on the mechanical properties of copper (Cu) during surface mechanical attrition treatment (SMAT) at both room temperature (RT) and cryogenic temperature (CT). Copper sheets were processed by SMAT at RT and at CT for 5, 15, and 30 min, respectively. The Cu samples after SMAT at RT for 30 min exhibited better ductility but lower strength than the samples after SMAT at CT for 30 min due to dynamic recovery. X-ray diffraction analysis indicated that decreasing temperature during SMAT led to an increase in the twin and dislocation densities. In addition, a thicker gradient structure layer with finer grains was obtained in the SMAT-processed Cu samples at CT than at RT. The results indicated that SMAT at CT can effectively suppress the occurring of dynamic recovery and produce ultrahigh strength pure copper without seriously sacrificing its ductility.

Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

NASA Astrophysics Data System (ADS)

Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

2017-10-01

Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

Hybrid Cu(2)O diode with orientation-controlled C(60) polycrystal.

PubMed

Izaki, Masanobu; Saito, Takamasa; Ohata, Tatsuya; Murata, Kazufumi; Fariza, Binti Mohamad; Sasano, Junji; Shinagawa, Tsutomu; Watase, Seiji

2012-07-25

We report on a hybrid diode composed of a 2.1 eV bandgap p-cupric oxide (Cu2O) semiconductor and fullerene (C60) layer with a face-centered cubic configuration. The hybrid diode has been constructed by electrodeposition of the 500 nm thick Cu2O layer in a basic aqueous solution containing a copper acetate hydrate and lactic acid followed by a vacuum evaporation of the 50 nm thick C60 layer at the evaporation rate from 0.25 to 1.0 Å/s. The C60 layers prepared by the evaporation possessed a face-centered cubic configuration with the lattice constant of 14.19 A, and the preferred orientation changed from random to (111) plane with decrease in the C60 evaporation rate from 1.0 to 0.25 Å/s. The hybrid p-Cu2O/C60 diode showed a rectification feature regardless of the C60 evaporation rate, and both the rectification ratio and forward current density improved with decrease in the C60 evaporation rate. The excellent rectification with the ideality factor of approximately 1 was obtained for the 500 nm thick (111)-Cu2O/50 nm thick (111)-fcc-C60/bathocuproine (BCP) diode at the C60 evaporation rate of 0.25 Å /s. The hybrid Cu2O/C60 diode prepared by stacking the C60 layer at the evaporation rate of 0.25 Å/s revealed the photovoltaic performance of 8.7 × 10(-6)% in conversion efficiency under AM1.5 illumination, and the conversion efficiency changed depending on the C60 evaporation rate.

Optical Metrology for CIGS Solar Cell Manufacturing and its Cost Implications

NASA Astrophysics Data System (ADS)

Sunkoju, Sravan Kumar

Solar energy is a promising source of renewable energy which can meet the demand for clean energy in near future with advances in research in the field of photovoltaics and cost reduction by commercialization. Availability of a non-contact, in-line, real time robust process control strategies can greatly aid in reducing the gap between cell and module efficiencies, thereby leading to cost-effective large-scale manufacturing of high efficiency CIGS solar cells. In order to achieve proper process monitoring and control for the deposition of the functional layers of CuIn1-xGaxSe 2 (CIGS) based thin film solar cell, optical techniques such as spectroscopic reflectometry and polarimetry are advantageous because they can be set up in an unobtrusive manner in the manufacturing line, and collect data in-line and in-situ. The use of these techniques requires accurate optical models that correctly represent the properties of the layers being deposited. In this study, Spectroscopic ellipsometry (SE) has been applied for the characterization of each individual stage of CIGS layers deposited using the 3-stage co-evaporation process along with the other functional layers. Dielectric functions have been determined for the energy range from 0.7 eV to 5.1 eV. Critical-point line-shape analysis was used in this study to determine the critical point energies of the CIGS based layers. To control the compositional and thickness uniformity of all the functional layers during the fabrication of CIGS solar cells over large areas, multilayer photovoltaics (PV) stack optical models were developed with the help of extracted dielectric functions. In this study, mapping capability of RC2 spectroscopic ellipsometer was used to map all the functional layer thicknesses of a CIGS solar cell in order to probe the spatial non-uniformities that can affect the performance of a cell. The optical functions for each of the stages of CIGS 3-stage deposition process along with buffer layer and transparent conducting oxide (TCO) bi-layer, thus derived were used in a fiber optic-based spectroscopic reflectometry optical monitoring system installed in the pilot line at the PVMC's Halfmoon facility. Results obtained from this study show that the use of regular fiber optics, instead of polarization-maintaining fiber optics, is sufficient for the purpose of process monitoring. Also, the technique does not need to be used "in-situ", but the measurements can be taken in-line, and are applicable to a variety of deposition techniques used for different functional layers deposited on rigid or flexible substrates. In addition, effect of Cu concentration on the CIGS optical properties has been studied. Mixed CIGS/Cu2-xSe phase was observed at the surface at the end of the second stage of 3-stage deposition process, under Cu-rich conditions. A significant change in optical behavior of CIGS due to Cu2-xSe at the surface was observed under Cu-rich conditions, which can be used as end-point detection method to move from 2nd stage to 3rd stage in the deposition process. Developed optical functions were applied to in-line reflectance measurements not only to identify the Cu2-xSe phase at the surface but also to measure the thickness of the mixed CIGS/Cu2-xSe layer. This spectroscopic reflectometry based in-line process control technique can be used for end-point detection as well as to control thickness during the preparation of large area CIGS films. These results can assist in the development of optical process-control tools for the manufacturing of high quality CIGS based photovoltaic cells, increasing the uptime and yield of the production line. Finally, to understand the cost implications, low cost potential of two different deposition technologies has been studied on both rigid and flexible substrates with the help of cost analysis. Cost advantages of employing a contactless optics based process control technique have been investigated in order to achieve a low cost of < 0.5 $/W for CIGS module production. Based on cost analysis, one of the best strategies for achieving the low cost targets would be increasing manufacturing throughput, using roll-to-roll thin-film module manufacturing, with co-evaporation and chemical bath deposition processes for absorber and buffer layer respectively, while applying a low-cost process control technique such as spectroscopic reflectometry to improve module efficiencies and maintain high yield.

Preparation of Hollow CuO@SiO2 Spheres and Its Catalytic Performances for the NO + CO and CO Oxidation

PubMed Central

Niu, Xiaoyu; Zhao, Tieying; Yuan, Fulong; Zhu, Yujun

2015-01-01

The hollow CuO@SiO2 spheres with a mean diameter of 240 nm and a thin shell layer of about 30 nm in thickness was synthesized using an inorganic SiO2 shell coating on the surface of Cu@C composite that was prepared by a two-step hydrothermal method. The obtained hollow CuO@SiO2 spheres were characterized by ICP-AES, nitrogen adsorption-desorption, SEM, TEM, XRD, H2-TPR, CO-TPR, CO-TPD and NO-TPD. The results revealed that the hollow CuO@SiO2 spheres consist of CuO uniformly inserted into SiO2 layer. The CuO@SiO2 sample exhibits particular catalytic activities for CO oxidation and NO + CO reactions compared with CuO supported on SiO2 (CuO/SiO2). The higher catalytic activity is attributed to the special hollow shell structure that possesses much more highly dispersed CuO nanocluster that can be easy toward the CO and NO adsorption and the oxidation of CO on its surface. PMID:25777579

Structure and superconductivity in (Bi(0.35)Cu(0.65))Sr2YCu2O7 and related materials

NASA Technical Reports Server (NTRS)

Jennings, R. A.; Williams, S. P.; Greaves, C.

1995-01-01

The recently reported (Bi/Cu)Sr2YCu2O7 phase has been studied by time of flight powder neutron diffraction. The proposed 1212 structure has been confirmed and refinements have shown the oxygen in the (Bi/Cu)O layer is displaced by 0.78 A from the ideal (1/2,1/2,0) site (P4/mmm space group) along /100/. Bond Valence Sum calculations have suggested oxidation states of Bi(5+) and Cu(2+) for the cations in the (Bi/Cu)O layers. The material is non-superconducting and all attempts to induce superconductivity have been unsuccessful. Work on the related material (Ce/Cu)Sr2YCu2O7 has shown the ideal Ce content to be 0.5 Ce per formula unit. The introduction of Ba (10%) onto the Sr site dramatically increases phase stability and also induces superconductivity (62 K).

Low-temperature structural and transport anomalies in Cu2Se

NASA Astrophysics Data System (ADS)

Chi, Hang; Kim, Hyoungchul; Thomas, John C.; Shi, Guangsha; Sun, Kai; Abeykoon, Milinda; Bozin, Emil S.; Shi, Xiaoya; Li, Qiang; Shi, Xun; Kioupakis, Emmanouil; Van der Ven, Anton; Kaviany, Massoud; Uher, Ctirad

2014-05-01

Through systematic examination of symmetrically nonequivalent configurations, first-principles calculations have identified a new ground state of Cu2Se, which is constructed by repeating sextuple layers of Se-Cu-Cu-Cu-Cu-Se. The layered nature is in accord with electron and x-ray diffraction studies at and below room temperature and also is consistent with transport properties. Magnetoresistance measurements at liquid helium temperatures exhibit cusp-shaped field dependence at low fields and evolve into quasilinear field dependence at intermediate and high fields. These results reveal the existence of weak antilocalization effect, which has been analyzed using a modified Hikami, Larkin, and Nagaoka model, including a quantum interference term and a classical quadratic contribution. Fitting parameters suggest a quantum coherence length L of 175 nm at 1.8 K. With increasing temperature, the classical parabolic behavior becomes more dominant, and L decreases as a power law of T-0.83.

Reaction-diffusion-induced explosive crystallization in a metal-selenium nanometer film structure

NASA Astrophysics Data System (ADS)

Kogai, V. Ya.

2016-03-01

Experimental data for reaction-diffusion-induced explosive crystallization in a nanodimensional metal (Cu, Ag)/selenium structure are presented. It is found that after the metal layer has completely diffused into the amorphous Se film, the electrical potential rises from 0.14 to 1.21 V in the Cu(30 nm)/Se(140 nm) heterolayer and from 0.01 to 1.17 V in the Ag(30 nm)/Se(140 nm) heterolayer. The metals diffusing into the amorphous Se layer interact with Se, forming nuclei of a new phase (CuSe or Ag2Se). The intense growth of the CuSe and Ag2Se crystallization centers results in a considerable liberation of latent energy in the form of phase transformation heat and in explosive growth of CuSe and Ag2Se nanocrystalline particles. The mean size of CuSe and Ag2Se crystallites equals 25 and 50 nm, respectively.

Raman study of the thermal stability of HgBa 2CaCu 2O 6+δ and HgBa 2Ca 2Cu 3O 8+δ

NASA Astrophysics Data System (ADS)

Chang, H.; He, Z. H.; Meng, R. L.; Xue, Y. Y.; Chu, C. W.

1995-02-01

We studied the thermal stability of HgBa 2CaCu 2O 6+δ and HgBa 2Ca 2Cu 3O 8+δ at varying laser irradiation power. Each compound has two Raman bands around 570 and 590 cm -1 which are assigned to the vibrations of the interstitial oxygen in HgO δ layers and the apical oxygen in BaO layers, respectively. The 590 cm -1 band shifts position slightly with irradiation, and both the intensity and position of the 570 cm -1 band vary significantly with the laser power. The occupation factor of the interstitial oxygen is sensitive to the annealing temperature. At higher temperatures (550-600°C), both compounds decompose into various (Ba,Cu)-oxides such as Ba 1- xCa xCuO 2.

Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

NASA Astrophysics Data System (ADS)

Edley, Michael

Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination. With these techniques, the extension of the depletion layer from CdSe into ZnO was determined to be vital to suppression of interfacial recombination. However, depletion of the ZnO also restricted the effective diffusion core for electrons and slowed their transport. Thus, materials and geometries should be chosen to allow for a depletion layer that suppresses interfacial recombination without impeding electron transport to the point that it is detrimental to cell performance. Thin film solar cells are another promising technology that can reduce costs by relaxing material processing requirements. CuInxGa (1-x)Se (CIGS) is a well studied thin film solar cell material that has achieved good efficiencies of 22.6%. However, use of rare elements raise concerns over the use of CIGS for global power production. CuSbS2 shares chemistry with CuInSe2 and also presents desirable properties for thin film absorbers such as optimal band gap (1.5 eV), high absorption coefficient, and Earth-abundant and non-toxic elements. Despite the promise of CuSbS2, direct characterization of the material for solar cell application is scarce in the literature. CuSbS2 nanoplates were synthesized by a colloidal hot-injection method at 220 °C in oleylamine. The CuSbS2 platelets synthesized for 30 minutes had dimensions of 300 nm by 400 nm with a thickness of 50 nm and were capped with the insulating oleylamine synthesis ligand. The oleylamine synthesis ligand provides control over nanocrystal growth but is detrimental to intercrystal charge transport that is necessary for optoelectronic device applications. Solid-state and solution phase ligand exchange of oleylamine with S2- were used to fabricate mesoporous films of CuSbS2 nanoplates for application in solar cells. Exchange of the synthesis ligand with S2- resulted in a two order of magnitude increase in 4-point probe conductivity. Photoexcited carrier lifetimes of 1.4 ns were measured by time-resolved terahertz spectroscopy, indicating potential for CuSbS2 as a solar cell absorber material.

Study of high-Tc interface superconductivity in La1.55Sr0.45CuO4/La2CuO4 heterostructures at high magnetic fields and frequencies

NASA Astrophysics Data System (ADS)

Gasparov, V. A.; Audouard, A.; Drigo, L.; He, Xi; Bozovic, I.

2017-10-01

We have synthesized heterostructures that consist of a layer of a cuprate insulator, La2CuO4, and a layer of a nonsuperconducting cuprate metal, La1.55Sr0.45CuO4. Such bilayers show high-Tc interface superconductivity confined within a single CuO2 plane. Here, we explore the behavior of interface superconductivity at high frequencies (up to 50 MHz) under high magnetic fields (up to 56 T). We find that interface superconductivity persists up to very high perpendicular fields (exceeding 40 T). The critical magnetic field Hm(T) shows an upward divergence with decreasing temperature suggestive of vortex-lattice melting, similar to what is observed in bulk superconducting cuprates.

Thermal Stability of Silver Paste Sintering on Coated Copper and Aluminum Substrates

NASA Astrophysics Data System (ADS)

Pei, Chun; Chen, Chuantong; Suganuma, Katsuaki; Fu, Guicui

2018-01-01

The thermal stability of silver (Ag) paste sintering on coated copper (Cu) and aluminum (Al) substrates has been investigated. Instead of conventional zincating or nickel plating, magnetron sputtering was used to achieve coating with titanium (Ti) and Ag. Silicon (Si) chips were bonded to coated Cu and Al substrates using a mixture of submicron Ag flakes and particles under 250°C and 0.4 MPa for 30 min. The joints were then subject to aging testing at 250°C for duration of 200 h, 500 h, and 1000 h. Two types of joints exhibited satisfactory initial shear strength above 45 MPa. However, the shear strength of the joints on Al substrate decreased to 28 MPa after 1000 h of aging, while no shear strength decline was detected for the joints on Cu substrate. Fracture surface analysis revealed that the vulnerable points of the two types of joints were (1) the Ag layer and (2) the interface between the Ti layer and Cu substrate. Based on the results of scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), and simulations, cracks in the Ag layer were identified as the cause of the shear strength degradation in the joints on Al substrate. The interface evolution of the joints on Cu substrate was ascribed to Cu migration and discontinuity points that initialized in the Ti layer. This study reveals that Al exhibited superior thermal stability with sintered Ag paste.

Modeling material interfaces with hybrid adhesion method

DOE PAGES

Brown, Nicholas Taylor; Qu, Jianmin; Martinez, Enrique

2017-01-27

A molecular dynamics simulation approach is presented to approximate layered material structures using discrete interatomic potentials through classical mechanics and the underlying principles of quantum mechanics. This method isolates the energetic contributions of the system into two pure material layers and an interfacial region used to simulate the adhesive properties of the diffused interface. The strength relationship of the adhesion contribution is calculated through small-scale separation calculations and applied to the molecular surfaces through an inter-layer bond criterion. By segregating the contributions into three regions and accounting for the interfacial excess energies through the adhesive surface bonds, it is possiblemore » to model each material with an independent potential while maintaining an acceptable level of accuracy in the calculation of mechanical properties. This method is intended for the atomistic study of the delamination mechanics, typically observed in thin-film applications. Therefore, the work presented in this paper focuses on mechanical tensile behaviors, with observations in the elastic modulus and the delamination failure mode. To introduce the hybrid adhesion method, we apply the approach to an ideal bulk copper sample, where an interface is created by disassociating the force potential in the middle of the structure. Various mechanical behaviors are compared to a standard EAM control model to demonstrate the adequacy of this approach in a simple setting. In addition, we demonstrate the robustness of this approach by applying it on (1) a Cu-Cu 2O interface with interactions between two atom types, and (2) an Al-Cu interface with two dissimilar FCC lattices. These additional examples are verified against EAM and COMB control models to demonstrate the accurate simulation of failure through delamination, and the formation and propagation of dislocations under loads. Finally, the results conclude that by modeling the energy contributions of an interface using hybrid adhesion bonds, we can provide an accurate approximation method for studies of large-scale mechanical properties, as well as the representation of various delamination phenomena at the atomic scale.« less

Influence of leaching on surface composition, microstructure, and valence band of single grain icosahedral Al-Cu-Fe quasicrystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowe, M.; McGrath, R.; Sharma, H. R.

The use of quasicrystals as precursors to catalysts for the steam reforming of methanol is potentially one of the most important applications of these new materials. To develop application as a technology requires a detailed understanding of the microscopic behavior of the catalyst. Here, we report the effect of leaching treatments on the surface microstructure, chemical composition, and valence band of the icosahedral (i-) Al-Cu-Fe quasicrystal in an attempt to prepare a model catalyst. The high symmetry fivefold surface of a single grain i-Al-Cu-Fe quasicrystal was leached with NaOH solution for varying times, and the resulting surface was characterized bymore » x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The leaching treatments preferentially remove Al producing a capping layer consisting of Fe and Cu oxides. The subsurface layer contains elemental Fe and Cu in addition to the oxides. The quasicrystalline bulk structure beneath remains unchanged. The subsurface gradually becomes Fe{sub 3}O{sub 4} rich with increasing leaching time. The surface after leaching exhibits micron sized dodecahedral cavities due to preferential leaching along the fivefold axis. Nanoparticles of the transition metals and their oxides are precipitated on the surface after leaching. The size of the nanoparticles is estimated by high resolution transmission microscopy to be 5-20 nm, which is in agreement with the AFM results. Selected area electron diffraction (SAED) confirms the crystalline nature of the nanoparticles. SAED further reveals the formation of an interface between the high atomic density lattice planes of nanoparticles and the quasicrystal. These results provide an important insight into the preparation of model catalysts of nanoparticles for steam reforming of methanol.« less

Dry transfer of graphene to dielectrics and flexible substrates using polyimide as a transparent and stable intermediate layer

NASA Astrophysics Data System (ADS)

Marchena, Miriam; Wagner, Frederic; Arliguie, Therese; Zhu, Bin; Johnson, Benedict; Fernández, Manuel; Lai Chen, Tong; Chang, Theresa; Lee, Robert; Pruneri, Valerio; Mazumder, Prantik

2018-07-01

We demonstrate the direct transfer of graphene from Cu foil to rigid and flexible substrates, such as glass and PET, using as an intermediate layer a thin film of polyimide (PI) mixed with an aminosilane (3-aminopropyltrimethoxysilane) or only PI, respectively. While the dry removal of graphene by an adhesive has been previously demonstrated—being removed from graphite by scotch tape or from a Cu foil by thick epoxy (~20 µm) on Si—our work is the first step towards making a substrate ready for device fabrication using the polymer-free technique. Our approach leads to an article that is transparent, thermally stable—up to 350 °C—and free of polymer residues on the device side of the graphene, which is contrary to the case of the standard wet-transfer process using PMMA. Also, in addition to previous novelty, our technique is fast and easier by using current industrial technology—a hot press and a laminator—with Cu recycling by its mechanical peel-off; it provides high interfacial stability in aqueous media and it is not restricted to a specific material—polyimide and polyamic acids can be used. All the previous reasons demonstrate a feasible process that enables device fabrication.

Orientation dependence of heterogeneous nucleation at the Cu-Pb solid-liquid interface.

PubMed

Palafox-Hernandez, J Pablo; Laird, Brian B

2016-12-07

In this work, we examine the effect of surface structure on the heterogeneous nucleation of Pb crystals from the melt at a Cu substrate using molecular-dynamics (MD) simulation. In a previous work [Palafox-Hernandez et al., Acta Mater. 59, 3137 (2011)] studying the Cu/Pb solid-liquid interface with MD simulation, we observed that the structure of the Cu(111) and Cu(100) interfaces was significantly different at 625 K, just above the Pb melting temperature (618 K for the model). The Cu(100) interface exhibited significant surface alloying in the crystal plane in contact with the melt. In contrast, no surface alloying was seen at the Cu(111) interface; however, a prefreezing layer of crystalline Pb, 2-3 atomic planes thick and slightly compressed relative to bulk Pb crystal, was observed to form at the interface. We observe that at the Cu(111) interface the prefreezing layer is no longer present at 750 K, but surface alloying in the Cu(100) interface persists. In a series of undercooling MD simulations, heterogeneous nucleation of fcc Pb is observed at the Cu(111) interface within the simulation time (5 ns) at 592 K-a 26 K undercooling. Nucleation and growth at Cu(111) proceeded layerwise with a nearly planar critical nucleus. Quantitative analysis yielded heterogeneous nucleation barriers that are more than two orders of magnitude smaller than the predicted homogeneous nucleation barriers from classical nucleation theory. Nucleation was considerably more difficult on the Cu(100) surface-alloyed substrate. An undercooling of approximately 170 K was necessary to observe nucleation at this interface within the simulation time. From qualitative observation, the critical nucleus showed a contact angle with the Cu(100) surface of over 90°, indicating poor wetting of the Cu(100) surface by the nucleating phase, which according to classical heterogeneous nucleation theory provides an explanation of the large undercooling necessary to nucleate on the Cu(100) surface, relative to Cu(111), whose surface is more similar to the nucleating phase due to the presence of the prefreezing layer.

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Origin of the energy level alignment at organic/organic interfaces: The role of structural defects

NASA Astrophysics Data System (ADS)

Bussolotti, Fabio; Yang, Jinpeng; Hinderhofer, Alexander; Huang, Yuli; Chen, Wei; Kera, Satoshi; Wee, Andrew T. S.; Ueno, Nobuo

2014-03-01

In this paper, the electronic properties of as-deposited and N2-exposedCuPc/F16CuPc interface, a prototype system for organic photovoltaic applications, are investigated by using ultralow background, high-sensitivity photoemission spectroscopy. It is found that (i) N2 exposure significantly modifies the energy level alignment (ELA) at the interface between CuPc and F16CuPc layer and (ii) the direction of the N2-induced energy level shift of the CuPc depends on the position of the Fermi level (EF) in the CuPc highest occupied molecular orbital-lowest unoccupied molecular orbital gap of the as-deposited film. These observations are related to the changes in the density of gap states (DOGS) produced by structural imperfections in the molecular packing geometry, as introduced by the N2 penetration into the CuPc layer. This result demonstrates the key role of structure-induced DOGS in controlling the ELA at organic/organic interfaces.

Nonoscillatory behavior in the magnetoresistance of Cu/Ni superlattice (abstract)

NASA Astrophysics Data System (ADS)

Abdul-Razzaq, W.

1994-05-01

It was reported that in many magnetic/nonmagnetic metallic multilayered systems, the interlayer-coupling oscillates between antiferromagnetic and ferromagnetic upon increasing the thickness of the nonmagnetic layer. This was evident by the oscillation of the magnetoresistance (MR) in these materials. Recently however, Harp, Parkin et al.1 found that the MR and coupling strength change monotonically with increasing Cu thickness in Co/Cu multilayers deposited by MBE, contradicting results on similar samples made by sputtering in which the MR was oscillatory. In this study, we show that in the Cu/Ni superlattice made by sputtering, the MR varies monotonically with increasing Cu thickness. This nonoscillatory behavior was observed at room temperature and at 77 K and, regardless of the direction of the magnetic field in relation to the direction of the current. The resistivity at zero magnetic field as a function of temperature also changes systematically with reducing the Cu layer thickness. The nature of the magnetic state in Cu/Ni superlattice is discussed in light of the transport property measurements.

Non-conventional Pt-Cu alloy/carbon paper electrochemical catalyst formed by electrodeposition using hydrogen bubble as template

NASA Astrophysics Data System (ADS)

Kim, Youngkwang; Lee, Hyunjoon; Lim, Taeho; Kim, Hyun-Jong; Kwon, Oh Joong

2017-10-01

With emerging stability issues in fuel cell technology, a non-conventional catalyst not supported on carbon materials has been highlighted because it can avoid negative influences of carbon support materials on the stability, such as carbon corrosion. The nanostructured thin film catalyst is representative of non-conventional catalysts, which shows improved stability, enhanced mass specific activity, and fast mass transfer at high current densities. However, the nanostructured thin film catalyst usually requires multi-step processes for fabrication, making its mass production complex and irreproducible. We introduce a Pt-Cu alloy nanostructured thin film catalyst, which can be simply prepared by electrodeposition. By using hydrogen bubbles as a template, a three-dimensional free-standing foam of Cu was electrodeposited directly on the micro-porous layer/carbon paper and it was then displaced with Pt by simple immersion. The structure characterization revealed that a porous thin Pt-Cu alloy catalyst layer was successfully formed on the micro-porous layer/carbon paper. The synthesized Pt-Cu alloy catalyst exhibited superior durability compared to a conventional Pt/C in single cell test.

Large-Scale Synthesis and Comprehensive Structure Study of δ-MnO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jue; Yu, Lei; Hu, Enyuan

Layered δ-MnO 2 (birnessites) are ubiquitous in nature and have also been reported to work as promising water oxidation catalysts or rechargeable alkali-ion battery cathodes when fabricated under appropriate conditions. Although tremendous effort has been spent on resolving the structure of natural/synthetic layered δ-MnO 2 in the last few decades, no conclusive result has been reached. In this Article, we report an environmentally friendly route to synthesizing homogeneous Cu-rich layered δ-MnO 2 nanoflowers in large scale. The local and average structure of synthetic Cu-rich layered δ-MnO 2 has been successfully resolved from combined Mn/Cu K-edge extended X-ray fine structure spectroscopymore » and X-ray and neutron total scattering analysis. It is found that appreciable amounts (~8%) of Mn vacancies are present in the MnO 2 layer and Cu 2+ occupies the interlayer sites above/below the vacant Mn sites. Effective hydrogen bonding among the interlayer water molecules and adjacent layer O ions has also been observed for the first time. These hydrogen bonds are found to play the key role in maintaining the intermediate and long-range stacking coherence of MnO 2 layers. Quantitative analysis of the turbostratic stacking disorder in this compound was achieved using a supercell approach coupled with anisotropic particle-size-effect modeling. Furthermore, the present method is expected to be generally applicable to the structural study of other technologically important nanomaterials.« less

Large-Scale Synthesis and Comprehensive Structure Study of δ-MnO 2

DOE PAGES

Liu, Jue; Yu, Lei; Hu, Enyuan; ...

2018-05-30

Layered δ-MnO 2 (birnessites) are ubiquitous in nature and have also been reported to work as promising water oxidation catalysts or rechargeable alkali-ion battery cathodes when fabricated under appropriate conditions. Although tremendous effort has been spent on resolving the structure of natural/synthetic layered δ-MnO 2 in the last few decades, no conclusive result has been reached. In this Article, we report an environmentally friendly route to synthesizing homogeneous Cu-rich layered δ-MnO 2 nanoflowers in large scale. The local and average structure of synthetic Cu-rich layered δ-MnO 2 has been successfully resolved from combined Mn/Cu K-edge extended X-ray fine structure spectroscopymore » and X-ray and neutron total scattering analysis. It is found that appreciable amounts (~8%) of Mn vacancies are present in the MnO 2 layer and Cu 2+ occupies the interlayer sites above/below the vacant Mn sites. Effective hydrogen bonding among the interlayer water molecules and adjacent layer O ions has also been observed for the first time. These hydrogen bonds are found to play the key role in maintaining the intermediate and long-range stacking coherence of MnO 2 layers. Quantitative analysis of the turbostratic stacking disorder in this compound was achieved using a supercell approach coupled with anisotropic particle-size-effect modeling. Furthermore, the present method is expected to be generally applicable to the structural study of other technologically important nanomaterials.« less

Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells

NASA Astrophysics Data System (ADS)

Cheng, Ke; Han, Kaikai; Kuang, Zhongcheng; Jin, Ranran; Hu, Junxia; Guo, Longfei; Liu, Ya; Lu, Zhangbo; Du, Zuliang

2017-04-01

In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se2 (CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density-voltage ( J- V) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit ( V oc) of 456 mV, a short-circuit ( J sc) of 40.357 mA/cm2 and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.

Microstructure, corrosion and tribological and antibacterial properties of Ti-Cu coated stainless steel.

PubMed

Jin, Xiaomin; Gao, Lizhen; Liu, Erqiang; Yu, Feifei; Shu, Xuefeng; Wang, Hefeng

2015-10-01

A Ti-Cu coated layer on 316L stainless steel (SS) was obtained by using the Closed Field Unbalanced Magnetron Sputtering (CFUBMS) system to improve antibacterial activity, corrosion and tribological properties. The microstructure and phase constituents of Ti-Cu coated layer were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and glow discharge optical emission spectrometry (GDOES). The corrosion and tribological properties of a stainless steel substrate, SS316L, when coated with Ti-Cu were investigated in a simulated body fluid (SBF) environment. The viability of bacteria attached to the antibacterial surface was tested using the spread plate method. The results indicate that the Ti-Cu coated SS316L could achieve a higher corrosion polarization resistance and a more stable corrosion potential in an SBF environment than the uncoated SS316L substrate. The desirable corrosion protection performance of Ti-Cu may be attributable to the formation of a Ti-O passive layer on the coating surface, protecting the coating from further corrosion. The Ti-Cu coated SS316L also exhibited excellent wear resistance and chemical stability during the sliding tests against Si3N4 balls in SBF environment. Moreover, the Ti-Cu coatings exhibited excellent antibacterial abilities, where an effective reduction of 99.9% of Escherichia coli (E.coli) within 12h was achieved by contact with the modified surface, which was attributed to the release of copper ions when the Ti-Cu coatings are in contact with bacterial solution. Copyright © 2015 Elsevier Ltd. All rights reserved.

Evaluation of different strategies for quantitative depth profile analysis of Cu/NiCu layers and multilayers via pulsed glow discharge - Time of flight mass spectrometry

NASA Astrophysics Data System (ADS)

Muñiz, Rocío; Lobo, Lara; Németh, Katalin; Péter, László; Pereiro, Rosario

2017-09-01

There is still a lack of approaches for quantitative depth-profiling when dealing with glow discharges (GD) coupled to mass spectrometric detection. The purpose of this work is to develop quantification procedures using pulsed GD (PGD) - time of flight mass spectrometry. In particular, research was focused towards the depth profile analysis of Cu/NiCu nanolayers and multilayers electrodeposited on Si wafers. PGDs are characterized by three different regions due to the temporal application of power: prepeak, plateau and afterglow. This last region is the most sensitive and so it is convenient for quantitative analysis of minor components; however, major elements are often saturated, even at 30 W of applied radiofrequency power for these particular samples. For such cases, we have investigated two strategies based on a multimatrix calibration procedure: (i) using the afterglow region for all the sample components except for the major element (Cu) that was analyzed in the plateau, and (ii) using the afterglow region for all the elements measuring the ArCu signal instead of Cu. Seven homogeneous certified reference materials containing Si, Cr, Fe, Co, Ni and Cu have been used for quantification. Quantitative depth profiles obtained with these two strategies for samples containing 3 or 6 multilayers (of a few tens of nanometers each layer) were in agreement with the expected values, both in terms of thickness and composition of the layers.

Dimer formation and surface alloying: a STM study of lead on Cu(211)

NASA Astrophysics Data System (ADS)

Bartels, L.; Zöphel, S.; Meyer, G.; Henze, E.; Rieder, K.-H.

1997-02-01

We present a STM investigation of Pb adsorption on the Cu(211) surface in the temperature range between 30 K and room temperature. We observe three different kinds of ordered 1D Pb and PbCu chains (nanowires) located at the intrinsic step edges of the Cu(211) surface. On room temperature prepared samples, Pb is found to be incorporated into the step edges of the (211) surface. The first ordered structure consists of CuPb chains at the step edges (p(2 × disorder)) and is followed with increasing coverage by a close packed row of Pb-atoms (p(4 × disorder)). Preparation at low temperature yields Pb-dimers, and the first ordered structure is a row of Pb-dimers at the step edge (p(3 × disorder)) followed with increased coverage by a structure as described above. By systematic manipulation with the tunneling tip, we could get additional insight into the structural elements of the PbCu layer on the atomic scale. Furthermore, by measuring the threshold resistance to detach atoms from different ad-sites, we can approximately determine the binding energy and gain some insight into the thermodynamical parameters involved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Yi-Siang; Chen, Jui-Yuan; Huang, Chun-Wei

Recently, the mechanism of resistive random access memory (RRAM) has been partly clarified and determined to be controlled by the forming and erasing of conducting filaments (CF). However, the size of the CF may restrict the application and development as devices are scaled down. In this work, we synthesized CuO nanowires (NW) (∼150 nm in diameter) to fabricate a CuO NW RRAM nanodevice that was much smaller than the filament (∼2 μm) observed in a bulk CuO RRAM device in a previous study. HRTEM indicated that the Cu{sub 2}O phase was generated after operation, which demonstrated that the filament could be minimizemore » to as small as 3.8 nm when the device is scaled down. In addition, energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) show the resistive switching of the dielectric layer resulted from the aggregated oxygen vacancies, which also match with the I-V fitting results. Those results not only verify the switching mechanism of CuO RRAM but also show RRAM has the potential to shrink in size, which will be beneficial to the practical application of RRAM devices.« less

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Morphological and Microstructural Evolution of Phosphorous-Rich Layer in SnAgCu/Ni-P UBM Solder Joint

NASA Astrophysics Data System (ADS)

Lin, Yung-Chi; Shih, Toung-Yi; Tien, Shih-Kang; Duh, Jenq-Gong

2007-11-01

Interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P under bump metallization (UBM) with various phosphorous contents were investigated by transmission electron microscope (TEM) and field emission electron probe microanalyzer (FE-EPMA). It was revealed that as the Ni-Sn-P compound was formed between the solder matrix and Ni-P UBM, the conventionally so-called phosphorous-rich (P-rich) layer was transformed to a series of layer compounds, including Ni3P, Ni12P5 and Ni2P. The relationship between Ni-Sn-P formation and evolution of P-rich layers was probed by electron microscopic characterization with the aid of the phase diagram of Ni-P. On the basis of the TEM micrograph, the selected area diffraction (SAD) pattern, and the FE-EPMA results, the detailed phase evolution of P-rich layers in the SnAgCu/Ni-P joint was revealed and proposed.

Application Prospects of Multilayer Film Shields for Space Research Instrumentation

NASA Astrophysics Data System (ADS)

Nyunt, P. W.; Vlasik, K. F.; Grachev, V. M.; Dmitrenko, V. V.; Novikov, A. S.; Petrenko, D. V.; Ulin, S. E.; Uteshev, Z. M.; Chernysheva, I. V.; Shustov, A. E.

We have studied the magnetic properties of multilayer film cylindrical configuration shields (MFS) based on NiFe / Cu. The studied samples were prepared by electrode position. MFS were constituted by alternating layers of NiFe and Cu, deposited on an aluminum cylinder with diameter of 4 cm, length of 13 cm and 0.5 cm thickness. The thickness of each ferromagnetic layer varied from 10 to 150 μm, and the thickness of Cu layers was 5 μm. Five-samples in which the number of ferromagnetic layers varied from 3 to 45 and copper - from 2 to 44 were tested. The best shielding efficiency was achieved at the maximum number of layers and comprised about 102. Permalloy multilayer foil shield at the same total thickness has several times less efficiency in comparison with MFS. The description of a prototype of the charged particles telescope for space application is presented. Results of its testing regarding sensitivity to the constant magnetic field are described.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

NASA Astrophysics Data System (ADS)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Controllable Interfacial Coupling Effects on the Magnetic Dynamic Properties of Perpendicular [Co/Ni]5/Cu/TbCo Composite Thin Films.

PubMed

Tang, Minghong; Zhao, Bingcheng; Zhu, Weihua; Zhu, Zhendong; Jin, Q Y; Zhang, Zongzhi

2018-02-07

Dynamic magnetic properties in perpendicularly exchange-coupled [Co/Ni] 5 /Cu (t Cu = 0-2 nm)/TbCo structures show strong dependences on the interfacial antiferromagnetic strength J ex , which is controlled by the Cu interlayer thickness. The precession frequency f and effective damping constant α eff of a [Co/Ni] 5 multilayer differ distinctly for parallel (P) and antiparallel (AP) magnetization orientation states. For samples with a thin t Cu , f of the AP state is apparently higher, whereas α eff is lower than that in the P state, owing to the unidirectional exchange bias effect (H EB ) from the TbCo layer. The differences in f and α eff between the two states gradually decrease with increasing t Cu . By using a uniform precession model including an additional H EB term, the field-dependent frequency curves can be well-fitted, and the fitted H EB value is in good agreement with the experimental data. Moreover, the saturation damping constant α 0 displays a nearly linear correlation with J ex . It decreases significantly with J ex and eventually approaches a constant value of 0.027 at t Cu = 2 nm where J ex vanishes. These results provide a better understanding and effective control of magnetization dynamics in exchange-coupled composite structures for spintronic applications.

Atomic scale real-space mapping of holes in YBa2Cu3O(6+δ).

PubMed

Gauquelin, N; Hawthorn, D G; Sawatzky, G A; Liang, R X; Bonn, D A; Hardy, W N; Botton, G A

2014-07-15

The high-temperature superconductor YBa2Cu3O(6+δ) consists of two main structural units--a bilayer of CuO2 planes that are central to superconductivity and a CuO(2+δ) chain layer. Although the functional role of the planes and chains has long been established, most probes integrate over both, which makes it difficult to distinguish the contribution of each. Here we use electron energy loss spectroscopy to directly resolve the plane and chain contributions to the electronic structure in YBa2Cu3O6 and YBa2Cu3O7. We directly probe the charge transfer of holes from the chains to the planes as a function of oxygen content, and show that the change in orbital occupation of Cu is large in the chain layer but modest in CuO2 planes, with holes in the planes doped primarily into the O 2p states. These results provide direct insight into the local electronic structure and charge transfers in this important high-temperature superconductor.

Detection of s-wave superconductivity on monolayer CuO2 films on Bi2Sr2CaCu2O8+δ.

NASA Astrophysics Data System (ADS)

Wang, Yang; Zhong, Yong; Han, Sha; Lv, Yanfeng; Wang, Wenlin; Zhang, Ding; Ding, Hao; Zhang, Yimin; Wang, Lili; He, Ke; Song, Canli; Ma, Xucun; Xue, Qikun

High temperature superconductivity emerges when the CuO2 layer touches the doped charge reservoir blocks. The redistributed charge carriers at these interfaces condense into coherent Cooper pairs, albeit the exact underlying mechanism is still highly controversial. Targeting at this, we have mimicked the CuO2/charge reservoir interface by depositing the monolayer CuO2 films on optimal doped Bi2Sr2CaCu2O8+δ substrates. Direct investigation on these superconducting CuO2 films, however, yields results in stark contrast with the common recognition. Despite of the well-known V shaped pseudogap, a U shaped gap is identified. This U shaped gap disappears at TC and is indifference to K, Cs and Ag adsorbates, in line with the traditional s-wave superconductivity. In view of these results, we propose that superconductivity in cuprates may indeed stem from the modulation doping induced two dimensional hole liquid, which is confined in the CuO2 layers. NSF and MOST of China.

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells.

PubMed

Dalapati, Goutam Kumar; Zhuk, Siarhei; Masudy-Panah, Saeid; Kushwaha, Ajay; Seng, Hwee Leng; Chellappan, Vijila; Suresh, Vignesh; Su, Zhenghua; Batabyal, Sudip Kumar; Tan, Cheng Cheh; Guchhait, Asim; Wong, Lydia Helena; Wong, Terence Kin Shun; Tripathy, Sudhiranjan

2017-05-02

We have investigated the impact of Cu 2 ZnSnS 4 -Molybdenum (Mo) interface quality on the performance of sputter-grown Cu 2 ZnSnS 4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoS x ) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoS x layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoS x layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Copper/carbon coated lithium sodium titanate as advanced anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wu, Kaiqiang; Lin, Xiaoting; Shao, Lianyi; Shui, Miao; Long, Nengbing; Ren, Yuanlong; Shu, Jie

2014-08-01

Core-shell Li2Na2Ti6O14@Cu/C is prepared by a preliminary formation of Li2Na2Ti6O14 by solid state reaction and a following coating process with Cu/C layer by thermal decomposition. The amorphous Cu/C coating layer reveals a thickness of 5 nm on the surface of Li2Na2Ti6O14, which improves the electronic conductivity and charge transfer rate of active materials. As a result, Li2Na2Ti6O14@Cu/C shows lower electrochemical polarization and quicker kinetic behavior compared to bare Li2Na2Ti6O14. Cycled at 50 mA g-1, Li2Na2Ti6O14@Cu/C can deliver a reversible capacity of 120.3 mAh g-1 after 50 cycles, which is much higher than the value of 96.8 mAh g-1 obtained by Li2Na2Ti6O14. Even kept at 400 mA g-1, a reversible lithium storage capacity of 76.3 mAh g-1 can be delivered by Li2Na2Ti6O14@Cu/C. The improved electrochemical properties of Li2Na2Ti6O14 are attributed to the electronic conductive Cu/C coating layer on the surface.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Vacuum Brazing of WC-8Co Cemented Carbides to Carbon Steel Using Pure Cu and Ag-28Cu as Filler Metal

NASA Astrophysics Data System (ADS)

Zhang, X. Z.; Liu, G. W.; Tao, J. N.; Shao, H. C.; Fu, H.; Pan, T. Z.; Qiao, G. J.

2017-02-01

The wetting and spreading behavior of commercial pure Cu and Ag-28Cu alloy on WC-8Co cemented carbide were investigated by the sessile drop technique. The contact angle of both systems obviously decreases with moderately increasing the wetting temperature. Vacuum brazing of the WC-8Co cemented carbide to SAE1045 steel using the pure Cu or Ag-28Cu as filler metal was further carried out based on the wetting results. The interfacial interactions and joint mechanical behavior involving microhardness, shear strength and fracture were analyzed and discussed. An obvious Fe-Cu-Co transition layer is detected at the WC-8Co/Cu interface, while no obvious reaction layer is observed at the whole WC-8Co/Ag-28Cu/SAE1045 brazing seam. The microhardness values of the two interlayers and the steel substrate near the two interlayers increase more or less, while those of WC-8Co cemented carbide substrates adjacent to the two interlayers decrease. The WC-8Co/SAE1045 joints using pure Cu and Ag-28Cu alloy as filler metals obtain average shear strength values of about 172 and 136 MPa, and both of the joint fractures occur in the interlayers.

Interactions of CuO nanoparticles with the algae Chlorella pyrenoidosa: adhesion, uptake, and toxicity.

PubMed

Zhao, Jian; Cao, Xuesong; Liu, Xiaoyu; Wang, Zhenyu; Zhang, Chenchen; White, Jason C; Xing, Baoshan

2016-11-01

The potential adverse effects of CuO nanoparticles (NPs) have increasingly attracted attention. Combining electron microscopic and toxicological investigations, we determined the adhesion, uptake, and toxicity of CuO NPs to eukaryotic alga Chlorella pyrenoidosa. CuO NPs were toxic to C. pyrenoidosa, with a 72 h EC50 of 45.7 mg/L. Scanning electron microscopy showed that CuO NPs were attached onto the surface of the algal cells and interacted with extracellular polymeric substances (EPS) excreted by the organisms. Transmission electron microscopy (TEM) showed that EPS layer of algae was thickened by nearly 4-fold after CuO NPs exposure, suggesting a possible protective mechanism. In spite of the thickening of EPS layer, CuO NPs were still internalized by endocytosis and were stored in algal vacuoles. TEM and electron diffraction analysis confirmed that the internalized CuO NPs were transformed to Cu2O NPs (d-spacing, ∼0.213 nm) with an average size approximately 5 nm. The toxicity investigation demonstrated that severe membrane damage was observed after attachment of CuO NPs with algae. Reactive oxygen species generation and mitochondrial depolarization were also noted upon exposure to CuO NPs. This work provides useful information on understanding the role of NPs-algae physical interactions in nanotoxicity.

Development of Long REBCO with BMO Coated Conductors by PLD Method with High Production Rate

NASA Astrophysics Data System (ADS)

Ibi, A.; Yoshida, T.; Taneda, T.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

We have been developing long REBa2Cu3O7-δ (RE: Y, Gd and Eu etc.) with BaMO3 (M: Zr, Sn and Hf etc.) coated conductors by the combination of the ion-beam assisted deposition (IBAD) and the pulsed laser deposition (PLD) methods. REBa2Cu3O7-δ with BaMO3 coated conductors showed high in-field performance, therefore, these coated conductors could be expected for the industrial and commercial applications at high temperatures in magnetic fields. However, to realize the low production cost for long REBa2Cu3O7-δ with BaMO3 coated conductors, improvement of the production rate of the REBa2Cu3O7-δ layers containing BaMO3 rods with maintaining high superconducting properties is required. To solve these problems, we have tried deposition of the REBa2Cu3O7-δ layers with high superconducting properties by the PLD method with high production rate. As a result, we have successfully fabricated EuBa2Cu3O7-δ layers containing BaHfO3 rods with high in-field Jc and Ic by the PLD method with high production rate. This EuBa2Cu3O7-δ with BaHfO3 coated conductor exhibit a high Ic value of 412 and 48.7 A/cm-width at 77 K in self-field and 3 T, respectively at the deposition rate of about 40 μm/h and the production rate of 10 m/h for a 1.35 μm EuBCO layer thick.