Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

PubMed

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Controlled growth of aligned carbon nanotube using pulsed glow barrier discharge

NASA Astrophysics Data System (ADS)

Nozaki, Tomohiro; Kimura, Yoshihito; Okazaki, Ken

2002-10-01

We first achieved a catalytic growth of aligned carbon nanotube (CNT) using atmospheric pressure pulsed glow barrier discharge combined with DC bias (1000 V). Aligned CNT can grow with the directional electric field, and this is a big challenge in barrier discharges since dielectric barrier does not allow DC bias and forces to use AC voltage to maintain stable plasma conditions. To overcome this, we developed a power source generating Gaussian-shape pulses at 20 kpps with 4% duty, and DC bias was applied to the GND electrode where Ni-, Fe-coated substrate existed. With positive pulse, i.e. substrate was the cathode, random growth of CNT was observed at about 10^9 cm-2. Growth rate significantly reduced when applied negative pulse; Negative glow formation near substrate is essential for sufficient supply of radical species to the catalyst. If -DC was biased, aligned CNT with 20 nm was synthesized because negative bias enhanced negative glow formation. Interestingly, 2 to 3 CNTs stuck each other with +DC bias, resulting in 50-70 nm and non-aligned CNT. Atmospheric pressure glow barrier discharges can be highly controlled and be a potential alternative to vacuum plasmas for CVD, micro-scale, nano-scale fabrication.

A split-cavity design for the incorporation of a DC bias in a 3D microwave cavity

NASA Astrophysics Data System (ADS)

Cohen, Martijn A.; Yuan, Mingyun; de Jong, Bas W. A.; Beukers, Ewout; Bosman, Sal J.; Steele, Gary A.

2017-04-01

We report on a technique for applying a DC bias in a 3D microwave cavity. We achieve this by isolating the two halves of the cavity with a dielectric and directly using them as DC electrodes. As a proof of concept, we embed a variable capacitance diode in the cavity and tune the resonant frequency with a DC voltage, demonstrating the incorporation of a DC bias into the 3D cavity with no measurable change in its quality factor at room temperature. We also characterize the architecture at millikelvin temperatures and show that the split cavity design maintains a quality factor Qi ˜ 8.8 × 105, making it promising for future quantum applications.

Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.

In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power presentmore » in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.« less

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bora, B., E-mail: bbora@cchen.cl

2015-10-15

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found tomore » work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.« less

Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm).

PubMed

Samanta, Sudeshna; Das, Kaustuv; Raychaudhuri, Arup Kumar

2013-04-10

: Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/fα. Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/f spectral power density.

Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)

PubMed Central

2013-01-01

Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/fα. Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/f spectral power density. PMID:23574820

Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

NASA Astrophysics Data System (ADS)

Prakash, T.; Ramasamy, S.; Murty, B. S.

2013-03-01

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights ( Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time ( τ), dielectric constant ( ɛ') and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying `brick layer model' and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.

Current-driven non-linear magnetodynamics in exchange-biased spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seinige, Heidi; Wang, Cheng; Tsoi, Maxim, E-mail: tsoi@physics.utexas.edu

2015-05-07

This work investigates the excitation of parametric resonance in exchange-biased spin valves (EBSVs). Using a mechanical point contact, high density dc and microwave currents were injected into the EBSV sample. Observing the reflected microwave power and the small rectification voltage that develops across the contact allows detecting the current-driven magnetodynamics not only in the bulk sample but originating exclusively from the small contact region. In addition to ferromagnetic resonance (FMR), parametric resonance at twice the natural FMR frequency was observed. In contrast to FMR, this non-linear resonance was excited only in the vicinity of the point contact where current densitiesmore » are high. Power-dependent measurements displayed a typical threshold-like behavior of parametric resonance and a broadening of the instability region with increasing power. Parametric resonance showed a linear shift as a function of applied dc bias which is consistent with the field-like spin-transfer torque induced by current on magnetic moments in EBSV.« less

High-voltage supply for neutron tubes in well-logging applications

DOEpatents

Humphreys, D.R.

1982-09-15

A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

High voltage supply for neutron tubes in well logging applications

DOEpatents

Humphreys, D. Russell

1989-01-01

A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

Effects of mould on electrochemical migration behaviour of immersion silver finished printed circuit board.

PubMed

Yi, Pan; Xiao, Kui; Dong, Chaofang; Zou, Shiwen; Li, Xiaogang

2018-02-01

The role played by mould in the electrochemical migration (ECM) behaviour of an immersion silver finished printed circuit board (PCB-ImAg) under a direct current (DC) bias was investigated. An interesting phenomenon is found whereby mould, especially Aspergillus niger, can preferentially grow well on PCB-ImAg under electrical bias and then bridge integrated circuits and form a migration path. The cooperation of the mould and DC bias aggravates the ECM process occurring on PCB-ImAg. When the bias voltage is below 15V, ECM almost does not occur for Ag coating. Mechanisms that explain the ECM processes of PCB-ImAg in the presence of mould and DC bias are proposed. Copyright © 2017. Published by Elsevier B.V.

Multipactor susceptibility on a dielectric with a bias dc electric field and a background gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Peng; Lau, Y. Y.; Franzi, Matthew

2011-05-15

We use Monte Carlo simulations and analytical calculations to derive the condition for the onset of multipactor discharge on a dielectric surface at various combinations of the bias dc electric field, rf electric field, and background pressures of noble gases, such as Argon. It is found that the presence of a tangential bias dc electric field on the dielectric surface lowers the magnitude of rf electric field threshold to initiate multipactor, therefore plausibly offering robust protection against high power microwaves. The presence of low pressure gases may lead to a lower multipactor saturation level, however. The combined effects of tangentialmore » dc electric field and external gases on multipactor susceptibility are presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasper, M.; Gramse, G.; Hoffmann, J.

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part ofmore » the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.« less

Extended behavioural modelling of FET and lattice-mismatched HEMT devices

NASA Astrophysics Data System (ADS)

Khawam, Yahya; Albasha, Lutfi

2017-07-01

This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

A fully integrated, wide-load-range, high-power-conversion-efficiency switched capacitor DC-DC converter with adaptive bias comparator for ultra-low-power power management integrated circuit

NASA Astrophysics Data System (ADS)

Asano, Hiroki; Hirose, Tetsuya; Kojima, Yuta; Kuroki, Nobutaka; Numa, Masahiro

2018-04-01

In this paper, we present a wide-load-range switched-capacitor DC-DC buck converter with an adaptive bias comparator for ultra-low-power power management integrated circuit. The proposed converter is based on a conventional one and modified to operate in a wide load range by developing a load current monitor used in an adaptive bias comparator. Measurement results demonstrated that our proposed converter generates a 1.0 V output voltage from a 3.0 V input voltage at a load of up to 100 µA, which is 20 times higher than that of the conventional one. The power conversion efficiency was higher than 60% in the load range from 0.8 to 100 µA.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Formaldehyde monitor for automobile exhausts

NASA Technical Reports Server (NTRS)

Easley, W. C.

1973-01-01

Device makes use of microwave spectral absorption in low-Q resonant Stark cell, and indications are that ultimate sensitivity of instrument is within 100 parts per billion of formaldehyde. Microwave source is very small and requires only six-volt dc bias for operation. Coarse tuning is accomplished mechanically and fine tuning by adjusting dc-bias voltage.

Enhanced sub-micron colloidal particle separation with interdigitated microelectrode arrays using mixed AC/DC dielectrophoretic scheme.

PubMed

Swaminathan, Vikhram V; Shannon, Mark A; Bashir, Rashid

2015-04-01

Dielectrophoretic separation of particles finds a variety of applications in the capture of species such as cells, viruses, proteins, DNA from biological systems, as well as other organic and inorganic contaminants from water. The ability to capture particles is constrained by poor volumetric scaling of separation force with respect to particle diameter, as well as the weak penetration of electric fields in the media. In order to improve the separation of sub-micron colloids, we present a scheme based on multiple interdigitated electrode arrays under mixed AC/DC bias. The use of high frequency longitudinal AC bias breaks the shielding effects through electroosmotic micromixing to enhance electric fields through the electrolyte, while a transverse DC bias between the electrode arrays enables penetration of the separation force to capture particles from the bulk of the microchannel. We determine the favorable biasing conditions for field enhancement with the help of analytical models, and experimentally demonstrate the improved capture from sub-micron colloidal suspensions with the mixed AC/DC electrostatic excitation scheme over conventional AC-DEP methods.

Performance of an X-ray single pixel TES microcalorimeter under DC and AC biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gottardi, L.; Kuur, J. van der; Korte, P. A. J. de

2009-12-16

We are developing Frequency Domain Multiplexing (FDM) for the read-out of TES imaging microcalorimeter arrays for future X-ray missions like IXO. In the FDM configuration the TES is AC voltage biased at a well defined frequencies (between 0.3 to 10 MHz) and acts as an AM modulating element. In this paper we will present a full comparison of the performance of a TES microcalorimeter under DC bias and AC bias at a frequency of 370 kHz. In both cases we measured the current-to-voltage characteristics, the complex impedance, the noise, the X-ray responsivity, and energy resolution. The behaviour is very similarmore » in both cases, but deviations in performances are observed for detector working points low in the superconducting transition (R/R{sub N}<0.5). The measured energy resolution at 5.89 keV is 2.7 eV for DC bias and 3.7 eV for AC bias, while the baseline resolution is 2.8 eV and 3.3 eV, respectively.« less

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

NASA Astrophysics Data System (ADS)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Non-Uniform Bias Enhancement of a Varactor-Tuned FSS used with a Low Profile 2.4 GHz Dipole Antenna

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas M.; Miranda, Felix A.

2012-01-01

In this paper a low profile antenna using a nonuniformly biased varactor-tuned frequency selective surface (FSS) is presented. The tunable FSS avoids the use of vias and has a simplified DC bias network. The voltages to the DC bias ports can be varied independently allowing adjustment in the frequency response and enhanced radiation properties. The measured data demonstrate tunability from 2.15 GHz to 2.63 GHz with peak efficiencies that range from 50% to 90% and instantaneous bandwidths of 50 MHz to 280 MHz within the tuning range. The total antenna thickness is approximately lambda/45.

Characterization on performance of micromixer using DC-biased AC electroosmosis

NASA Astrophysics Data System (ADS)

Park, Bi-O.; Song, Simon

2010-11-01

An active micromixer using DC-biased AC-Electroosmosis (ACEO) is investigated to figure out the effects of design parameters on the mixing performance. The mixer consists of a straight microchannel, with a cross section of 60 x 100 μm, and gold electrode pairs fabricated in the microchannel. The design parameters include the number of electrode pairs, flow rate, DC-biased voltage, AC voltage and AC frequency. First, we found that a mixing index became 80% 100 μm downstream of a single electrode pair with a length of 2 mm when applying a 25Vpp, 2.0 VDC, 100 kHz sine signal to the electrodes. With decreasing AC frequency, the mixing index is affected little. But the mixing index significantly increases with increasing either DC-biased voltage or AC voltage. Also, we were able to increase the mixing index up to 90% by introducing alternating vortices with multiple electrode pairs. Finally, we discovered that the mixing index decreases as the flow rate increases in the microchannel, and there is an optimal number of electrode pairs with respect to a flow rate. Detailed quantitative measurement results will be presented at the meeting.

Modeling and simulation, and their validation of three-phase transformers with three legs under DC bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuchs, E.F.; You, Y.; Roesler, D.J.

This paper proposes a new model for three-phase transformers with three legs with and without tank under DC bias based on electric and magnetic circuit theory. For the calculation of the nonsinusoidal no-load currents, a combination of time and frequency domains is used. The analysis shows that (1) asymmetric three-phase transformers with three legs generate magnetizing currents with triplen harmonics not being of the zero-sequence type. (2) The wave shapes of the three magnetizing currents of (asymmetric) transformers are dependent on the phase sequence. (3) The magnetic history of transformer magnetization -- due to residual magnetization and hysteresis of themore » tank -- cannot be ignored if a DC bias is present and the magnetic influence of the tank is relatively strong, e.g., for oil-cooled transformers. (4) Symmetric three-phase transformers with three legs generate no-load currents without triplen harmonics. (5) The effects of DC bias currents (e.g., reactive power demand, harmonic distortion) can be suppressed employing symmetric three-phase transformers with three legs including tank. Measurements corroborate computational results; thus this nonlinear model is valid and accurate.« less

Study on the effect of measuring methods on incident photon-to-electron conversion efficiency of dye-sensitized solar cells by home-made setup.

PubMed

Guo, Xiao-Zhi; Luo, Yan-Hong; Zhang, Yi-Duo; Huang, Xiao-Chun; Li, Dong-Mei; Meng, Qing-Bo

2010-10-01

An experimental setup is built for the measurement of monochromatic incident photon-to-electron conversion efficiency (IPCE) of solar cells. With this setup, three kinds of IPCE measuring methods as well as the convenient switching between them are achieved. The setup can also measure the response time and waveform of the short-circuit current of solar cell. Using this setup, IPCE results of dye-sensitized solar cells (DSCs) are determined and compared under different illumination conditions with each method. It is found that the IPCE values measured by AC method involving the lock-in technique are sincerely influenced by modulation frequency and bias illumination. Measurements of the response time and waveform of short-circuit current have revealed that this effect can be explained by the slow response of DSCs. To get accurate IPCE values by this method, the measurement should be carried out with a low modulation frequency and under bias illumination. The IPCE values measured by DC method under the bias light illumination will be disturbed since the short-circuit current increased with time continuously due to the temperature rise of DSC. Therefore, temperature control of DSC is considered necessary for IPCE measurement especially in DC method with bias light illumination. Additionally, high bias light intensity (>2 sun) is found to decrease the IPCE values due to the ion transport limitation of the electrolyte.

Giant self-biased magnetoelectric coupling in co-fired textured layered composites

NASA Astrophysics Data System (ADS)

Yan, Yongke; Zhou, Yuan; Priya, Shashank

2013-02-01

Co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was synthesized and characterized. We demonstrate integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure to achieve strong magnetoelectric coupling. Using the co-fired composite, a strategy was developed based upon the hysteretic response of nickel-copper-zinc ferrite magnetostrictive materials to achieve peak magnetoelectric response at zero DC bias, referred as self-biased magnetoelectric response. Fundamental understanding of self-bias phenomenon in composites with single phase magnetic material was investigated by quantifying the magnetization and piezomagnetic changes with applied DC field. We delineate the contribution arising from the interfacial strain and inherent magnetic hysteretic behavior of copper modified nickel-zinc ferrite towards self-bias response.

Extended linear ion trap frequency standard apparatus

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor)

1995-01-01

A linear ion trap for frequency standard applications is provided with a plurality of trapping rods equally spaced and applied quadruple rf voltages for radial confinement of atomic ions and biased level pins at each end for axial confinement of the ions. The trapping rods are divided into two linear ion trap regions by a gap in each rod in a common radial plane to provide dc discontinuity, thus dc isolating one region from the other. A first region for ion-loading and preparation fluorescence is biased with a dc voltage to transport ions into a second region for resonance frequency comparison with a local oscillator derived frequency while the second region is held at zero voltage. The dc bias voltage of the regions is reversed for transporting the ions back into the first region for fluorescence measurement. The dual mode cycle is repeated continuously for comparison and feedback control of the local oscillator derived frequency. Only the second region requires magnetic shielding for the resonance function which is sensitive to any ambient magnetic fields.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Ultrafast strong-field photoelectron emission from biased metal surfaces: exact solution to time-dependent Schrödinger Equation

PubMed Central

Zhang, Peng; Lau, Y. Y.

2016-01-01

Laser-driven ultrafast electron emission offers the possibility of manipulation and control of coherent electron motion in ultrashort spatiotemporal scales. Here, an analytical solution is constructed for the highly nonlinear electron emission from a dc biased metal surface illuminated by a single frequency laser, by solving the time-dependent Schrödinger equation exactly. The solution is valid for arbitrary combinations of dc electric field, laser electric field, laser frequency, metal work function and Fermi level. Various emission mechanisms, such as multiphoton absorption or emission, optical or dc field emission, are all included in this single formulation. The transition between different emission processes is analyzed in detail. The time-dependent emission current reveals that intense current modulation may be possible even with a low intensity laser, by merely increasing the applied dc bias. The results provide insights into the electron pulse generation and manipulation for many novel applications based on ultrafast laser-induced electron emission. PMID:26818710

Highly Efficient Amplifier for Ka-Band Communications

NASA Technical Reports Server (NTRS)

1996-01-01

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Reversal of the asymmetry in a cylindrical coaxial capacitively coupled Ar/Cl 2 plasma

DOE PAGES

Upadhyay, Janardan; Im, Do; Popović, Svetozar; ...

2015-10-08

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, andmore » disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl 2 discharge. Lastly, the reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry.« less

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Bi-directional flow induced by an AC electroosmotic micropump with DC voltage bias.

PubMed

Islam, Nazmul; Reyna, Jairo

2012-04-01

This paper discusses the principle of biased alternating current electroosmosis (ACEO) and its application to move the bulk fluid in a microchannel, as an alternative to mechanical pumping methods. Previous EO-driven flow research has looked at the effect of electrode asymmetry and transverse traveling wave forms on the performance of electroosmotic pumps. This paper presents an analysis that was conducted to assess the effect of combining an AC signal with a DC (direct current) bias when generating the electric field needed to impart electroosmosis (EO) within a microchannel. The results presented here are numerical and experimental. The numerical results were generated through simulations performed using COMSOL 3.5a. Currently available theoretical models for EO flows were embedded in the software and solved numerically to evaluate the effects of channel geometry, frequency of excitation, electrode array geometry, and AC signal with a DC bias on the flow imparted on an electrically conducting fluid. Simulations of the ACEO flow driven by a constant magnitude of AC voltage over symmetric electrodes did not indicate relevant net flows. However, superimposing a DC signal over the AC signal on the same symmetric electrode array leads to a noticeable net forward flow. Moreover, changing the polarity of electrical signal creates a bi-directional flow on symmetrical electrode array. Experimental flow measurements were performed on several electrode array configurations. The mismatch between the numerical and experimental results revealed the limitations of the currently available models for the biased EO. However, they confirm that using a symmetric electrode array excited by an AC signal with a DC bias leads to a significant improvement in flow rates in comparison to the flow rates obtained in an asymmetric electrode array configuration excited just with an AC signal. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

PubMed

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Influence of DC-biasing on the performance of graphene spin valve

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Hussain, Tassadaq; Iqbal, Muhammad Javaid

2018-04-01

Generating and controlling the spin valve signal are key factors in 'spintronics', which aims to utilize the spin degree of electrons. For this purpose, spintronic devices are constructed that can detect the spin signal. Here we investigate the effect of direct current (DC) on the magnetoresistance (MR) of graphene spin valve. The DC input not only decreases the magnitude of MR but also distorts the spin valve signal at higher DC inputs. Also, low temperature measurements revealed higher MR for the device, while the magnitude is noticed to decrease at higher temperatures. Furthermore, the spin polarization associated with NiFe electrodes is continuously increased at low DC bias and low temperatures. We also demonstrate the ohmic behavior of graphene spin valve by showing linear current-voltage (I-V) characteristics of the junction. Our findings may contribute significantly in modulating and controlling the spin transport properties of vertical spin valve structures.

Hafnium transistor design for neural interfacing.

PubMed

Parent, David W; Basham, Eric J

2008-01-01

A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

NASA Astrophysics Data System (ADS)

Raghvendra; Singh, Rajesh Kumar; Singh, Prabhakar

2014-09-01

One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573-873 K and in the frequency range 20 Hz-1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed.

DC currents collected by a RF biased electrode quasi-parallel to the magnetic field

NASA Astrophysics Data System (ADS)

Faudot, E.; Devaux, S.; Moritz, J.; Bobkov, V.; Heuraux, S.

2017-10-01

Local plasma biasings due to RF sheaths close to ICRF antennas result mainly in a negative DC current collection on the antenna structure. In some specific cases, we may observe positive currents when the ion mobility (seen from the collecting surface) overcomes the electron one or/and when the collecting surface on the antenna side becomes larger than the other end of the flux tube connected to the wall. The typical configuration is when the antenna surface is almost parallel to the magnetic field lines and the other side perpendicular. To test the optimal case where the magnetic field is quasi-parallel to the electrode surface, one needs a linear magnetic configuration as our magnetized RF discharge experiment called Aline. The magnetic field angle is in our case lower than 1 relative to the RF biased surface. The DC current flowing through the discharge has been measured as a function of the magnetic field strength, neutral gas (He) pressure and RF power. The main result is the reversal of the DC current depending on the magnetic field, collision frequency and RF power level.

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

Characterization of an active metasurface using terahertz ellipsometry

DOE PAGES

Karl, Nicholas; Heimbeck, Martin S.; Everitt, Henry O.; ...

2017-11-06

Switchable metasurfaces fabricated on a doped epi-layer have become an important platform for developing techniques to control terahertz (THz) radiation, as a DC bias can modulate the transmission characteristics of the metasurface. To model and understand this performance in new device configurations accurately, a quantitative understanding of the bias-dependent surface characteristics is required. In this work, we perform THz variable angle spectroscopic ellipsometry on a switchable metasurface as a function of DC bias. By comparing these data with numerical simulations, we extract a model for the response of the metasurface at any bias value. Using this model, we predict amore » giant bias-induced phase modulation in a guided wave configuration. Lastly, these predictions are in qualitative agreement with our measurements, offering a route to efficient modulation of THz signals.« less

Toroidal-Core Microinductors Biased by Permanent Magnets

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Blaes, Brent

2003-01-01

The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current. In either case, permanent-magnet material and the slant (if any) and thickness of the gap must be chosen according to the equations to obtain the required bias flux. In modifying the design of the inductor, one must ensure that the inductance is not altered. The simplest way to preserve the original value of inductance would be to leave the gap dimensions unchanged and fill the gap with a permanent- magnet material that, fortuitously, would produce just the required bias flux. A more generally applicable alternative would be to partly fill either the original gap or a slightly enlarged gap with a suitable permanent-magnet material (thereby leaving a small residual gap) so that the reluctance of the resulting magnetic circuit would yield the desired inductance.

A robust low quiescent current power receiver for inductive power transmission in bio implants

NASA Astrophysics Data System (ADS)

Helalian, Hamid; Pasandi, Ghasem; Jafarabadi Ashtiani, Shahin

2017-05-01

In this paper, a robust low quiescent current complementary metal-oxide semiconductor (CMOS) power receiver for wireless power transmission is presented. This power receiver consists of three main parts including rectifier, switch capacitor DC-DC converter and low-dropout regulator (LDO) without output capacitor. The switch capacitor DC-DC converter has variable conversion ratios and synchronous controller that lets the DC-DC converter to switch among five different conversion ratios to prevent output voltage drop and LDO regulator efficiency reduction. For all ranges of output current (0-10 mA), the voltage regulator is compensated and is stable. Voltage regulator stabilisation does not need the off-chip capacitor. In addition, a novel adaptive biasing frequency compensation method for low dropout voltage regulator is proposed in this paper. This method provides essential minimum current for compensation and reduces the quiescent current more effectively. The power receiver was designed in a 180-nm industrial CMOS technology, and the voltage range of the input is from 0.8 to 2 V, while the voltage range of the output is from 1.2 to 1.75 V, with a maximum load current of 10 mA, the unregulated efficiency of 79.2%, and the regulated efficiency of 64.4%.

Field-Tuned Superconductor-Insulator Transition with and without Current Bias.

PubMed

Bielejec, E; Wu, Wenhao

2002-05-20

The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin beryllium films quench condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product nuz = 1.35+/-0.10 and a critical sheet resistance, R(c), of about 1.2R(Q), with R(Q) = h/4e(2). However, in the presence of dc bias currents that are smaller than the zero-field critical currents, nuz becomes 0.75+/-0.10. This new set of exponents suggests that the field-tuned transitions with and without a dc bias current belong to different universality classes.

Simulation of the dc Plasma in Carbon Nanotube Growth

NASA Technical Reports Server (NTRS)

Hash, David; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

2003-01-01

A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.

Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

NASA Astrophysics Data System (ADS)

Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

2013-06-01

High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.

High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balci, Soner; Czaplewski, David A.; Jung, Il Woong

Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As amore » result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.« less

A low-power high-sensitivity analog front-end for PPG sensor.

PubMed

Binghui Lin; Atef, Mohamed; Guoxing Wang

2017-07-01

This paper presents a low-power analog front-end (AFE) photoplethysmography (PPG) sensor fabricated in 0.35 μm CMOS process. The AFE amplifies the weak photocurrent from the photodiode (PD) and converts it to a strong voltage at the output. In order to decrease the power consumption, the circuits are designed in subthreshold region; so the total biasing current of the AFE is 10 μ A. Since the large input DC photocurrent is a big issue for the PPG sensing circuit, we apply a DC photocurrent rejection technique by adding a DC current-cancellation loop to reject the large DC photocurrent up to 10 μA. In addition, a pseudo resistor is used to reduce the high-pass corner frequency below 0.5 Hz and Gm-C filter is adapted to reject the out-of-band noise higher than 16 Hz. For the whole sensor, the amplifier chain can achieve a total gain of 140 dBμ and an input integrated noise current of 68.87 pA rms up to 16 Hz.

A CMOS matrix for extracting MOSFET parameters before and after irradiation

NASA Technical Reports Server (NTRS)

Blaes, B. R.; Buehler, M. G.; Lin, Y.-S.; Hicks, K. A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

NASA Astrophysics Data System (ADS)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F <1 ), as has been established previously [Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Modelling IRF8 Deficient Human Hematopoiesis and Dendritic Cell Development with Engineered iPS Cells.

PubMed

Sontag, Stephanie; Förster, Malrun; Qin, Jie; Wanek, Paul; Mitzka, Saskia; Schüler, Herdit M; Koschmieder, Steffen; Rose-John, Stefan; Seré, Kristin; Zenke, Martin

2017-04-01

Human induced pluripotent stem (iPS) cells can differentiate into cells of all three germ layers, including hematopoietic stem cells and their progeny. Interferon regulatory factor 8 (IRF8) is a transcription factor, which acts in hematopoiesis as lineage determining factor for myeloid cells, including dendritic cells (DC). Autosomal recessive or dominant IRF8 mutations occurring in patients cause severe monocytic and DC immunodeficiency. To study IRF8 in human hematopoiesis we generated human IRF8-/- iPS cells and IRF8-/- embryonic stem (ES) cells using RNA guided CRISPR/Cas9n genome editing. Upon induction of hematopoietic differentiation, we demonstrate that IRF8 is dispensable for iPS cell and ES cell differentiation into hemogenic endothelium and for endothelial-to-hematopoietic transition, and thus development of hematopoietic progenitors. We differentiated iPS cell and ES cell derived progenitors into CD141+ cross-presenting cDC1 and CD1c+ classical cDC2 and CD303+ plasmacytoid DC (pDC). We found that IRF8 deficiency compromised cDC1 and pDC development, while cDC2 development was largely unaffected. Additionally, in an unrestricted differentiation regimen, IRF8-/- iPS cells and ES cells exhibited a clear bias toward granulocytes at the expense of monocytes. IRF8-/- DC showed reduced MHC class II expression and were impaired in cytokine responses, migration, and antigen presentation. Taken together, we engineered a human IRF8 knockout model that allows studying molecular mechanisms of human immunodeficiencies in vitro, including the pathophysiology of IRF8 deficient DC. Stem Cells 2017;35:898-908. © 2017 The Authors Stem Cells published by Wiley Periodicals, Inc. on behalf of AlphaMed Press.

Broadband/Wideband Magnetoelectric Response

DOE PAGES

Park, Chee-Sung; Priya, Shashank

2012-01-01

A broadband/wideband magnetoelectric (ME) composite offers new opportunities for sensing wide ranges of both DC and AC magnetic fields. The broadband/wideband behavior is characterized by flat ME response over a given AC frequency range and DC magnetic bias. The structure proposed in this study operates in the longitudinal-transversal (L-T) mode. In this paper, we provide information on (i) how to design broadband/wideband ME sensors and (ii) how to control the magnitude of ME response over a desired frequency and DC bias regime. A systematic study was conducted to identify the factors affecting the broadband/wideband behavior by developing experimental models andmore » validating them against the predictions made through finite element modeling. A working prototype of the sensor with flat bands for both DC and AC magnetic field conditions was successfully obtained. These results are quite promising for practical applications such as current probe, low-frequency magnetic field sensing, and ME energy harvester.« less

Coupling and tuning of modal frequencies in direct current biased microelectromechanical systems arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kambali, Prashant N.; Swain, Gyanadutta; Pandey, Ashok Kumar, E-mail: ashok@iith.ac.in

2015-08-10

Understanding the coupling of different modal frequencies and their tuning mechanisms has become essential to design multi-frequency MEMS devices. In this work, we fabricate a MEMS beam with fixed boundaries separated from two side electrodes and a bottom electrode. Subsequently, we perform experiments to obtain the frequency variation of in-plane and out-of-plane mechanical modes of the microbeam with respect to both DC bias and laser heating. We show that the frequencies of the two modes coincide at a certain DC bias, which in turn can also be varied due to temperature. Subsequently, we develop a theoretical model to predict themore » variation of the two modes and their coupling due to a variable gap between the microbeam and electrodes, initial tension, and fringing field coefficients. Finally, we discuss the influence of frequency tuning parameters in arrays of 3, 33, and 40 microbeams, respectively. It is also found that the frequency bandwidth of a microbeam array can be increased to as high as 25 kHz for a 40 microbeam array with a DC bias of 80 V.« less

Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.

Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

NASA Astrophysics Data System (ADS)

Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

2004-03-01

(Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

Distinguishing magnetic blocking and surface spin-glass freezing in nickel ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Nadeem, K.; Krenn, H.; Traussing, T.; Letofsky-Papst, I.

2011-01-01

Nickel ferrite nanoparticles dispersed in SiO2 matrix have been synthesized by sol-gel method. Structural analysis has been performed by using x-ray diffraction and transmission electron microscopy. Magnetic properties have been investigated by using superconducting quantum interference device magnetometry. In addition to the average blocking temperature peak at TB=120 K measured by a zero field cooled temperature scan of the dc susceptibility, an additional hump near 15 K is observed. Temperature dependent out-of-phase ac susceptibility shows the same features: one broad peak at high temperature and a second narrow peak at low temperature. The high temperature peak corresponds to magnetic blocking of individual nanoparticles, while the low temperature peak is attributed to surface spin-glass freezing which becomes dominant for decreasing particle diameter. To prove the dynamics of the spin (dis)order in both regimes of freezing and blocking, the frequency dependent ac susceptibility is investigated under a biasing dc field. The frequency shift in the "frozen" low-temperature ac susceptibility peak is fitted to a dynamic scaling law with a critical exponent zv=7.5, which indicates a spin-glass phase. Exchange bias is turned on at low temperature which signifies the existence of a strong core-shell interaction. Aging and memory effects are further unique fingerprints of a spin-glass freezing on the surface of isolated magnetic nanoparticles.

Stability study of cermet-supported solid oxide fuel cells with bi-layered electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Xinge; Gazzarri, Javier; Robertson, Mark; Decès-Petit, Cyrille; Kesler, Olivera

Performance and stability of five cermet-supported button-type solid oxide fuel cells featuring a bi-layered electrolyte (SSZ/SDC), an SSC cathode, and a Ni-SSZ anode, were analyzed using polarization curves, impedance spectroscopy, and post-mortem SEM observation. The cell performance degradation at 650 °C in H 2/air both with and without DC bias conditions was manifested primarily as an increase in polarization resistance, approximately at a rate of 2.3 mΩ cm 2 h -1 at OCV, suggesting a decrease in electrochemical kinetics as the main phenomenon responsible for the performance decay. In addition, the initial series resistance was about ten times higher than the calculated resistance corresponding to the electrolyte, reflecting a possible inter-reaction between the electrolyte layers that occurred during the sintering stage. In situ and ex situ sintered cathodes showed no obvious difference in cell performance or decay rate. The stability of the cells with and without electrical load was also investigated and no significant influence of DC bias was recorded. Based on the experimental results presented, we preliminarily attribute the performance degradation to electrochemical and microstructural degradation of the cathode.

Development of Simple Designs of Multitip Probe Diagnostic Systems for RF Plasma Characterization

PubMed Central

Naz, M. Y.; Shukrullah, S.; Ghaffar, A.; Rehman, N. U.

2014-01-01

Multitip probes are very useful diagnostics for analyzing and controlling the physical phenomena occurring in low temperature discharge plasmas. However, DC biased probes often fail to perform well in processing plasmas. The objective of the work was to deduce simple designs of DC biased multitip probes for parametric study of radio frequency plasmas. For this purpose, symmetric double probe, asymmetric double probe, and symmetric triple probe diagnostic systems and their driving circuits were designed and tested in an inductively coupled plasma (ICP) generated by a 13.56 MHz radio frequency (RF) source. Using I-V characteristics of these probes, electron temperature, electron number density, and ion saturation current was measured as a function of input power and filling gas pressure. An increasing trend was noticed in electron temperature and electron number density for increasing input RF power whilst a decreasing trend was evident in these parameters when measured against filling gas pressure. In addition, the electron energy probability function (EEPF) was also studied by using an asymmetric double probe. These studies confirmed the non-Maxwellian nature of the EEPF and the presence of two groups of the energetic electrons at low filling gas pressures. PMID:24683326

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

An experimental study of phase transitions in a complex plasma

NASA Astrophysics Data System (ADS)

Smith, Bernard Albert Thomas, II

In semiconductor manufacturing, contamination due to particulates significantly decreases the yield and quality of device fabrication, therefore increasing the cost of production. Dust particle clouds can be found in almost all plasma processing environments including both plasma etching devices and in plasma deposition processes. Dust particles suspended within such plasmas will acquire an electric charge from collisions with free electrons in the plasma. If the ratio of inter-particle potential energy to the average kinetic energy is sufficient, the particles will form either a "liquid" structure with short range ordering or a crystalline structure with long range ordering. Otherwise, the dust particle system will remain in a gaseous state. Many experiments have been conducted over the past decade on such complex plasmas to discover the character of the systems formed, but more work is needed to fully understand these structures. This paper describes the processes involved in setting up the CASPER GEC RF Reference Cell and the modifications necessary to examine complex plasmas. Research conducted to characterize the system is outlined to demonstrate that the CASPER Cell behaves as other GEC Cells. In addition, further research performed shows the behavior of the complex plasma system in the CASPER Cell is similar to complex plasmas studied by other groups in this field. Along the way analysis routines developed specifically for this system are described. New research involving polydisperse dust distributions is carried out in the system once the initial characterization is finished. Next, a system to externally vary the DC bias in the CASPER Cell is developed and characterized. Finally, new research conducted to specifically examine how the complex plasma system reacts to a variable DC bias is reported. Specifically, the response of the interparticle spacing to various system parameters (including the external DC bias) is examined. Also, a previously unreported phenomenon, namely layer splitting, is examined.

SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Solving the Capacitive Effect in the High-Frequency sweep for Langmuir Probe in SYMPLE

NASA Astrophysics Data System (ADS)

Pramila; Patel, J. J.; Rajpal, R.; Hansalia, C. J.; Anitha, V. P.; Sathyanarayana, K.

2017-04-01

Langmuir Probe based measurements need to be routinely carried out to measure various plasma parameters such as the electron density (ne), the electron temperature (Te), the floating potential (Vf), and the plasma potential (Vp). For this, the diagnostic electronics along with the biasing power supplies is installed in standard industrial racks with a 2KV isolation transformer. The Signal Conditioning Electronics (SCE) system is populated inside the 4U-chassis based system with the front-end electronics, designed using high common mode differential amplifiers which can measure small differential signal in presence of high common mode dc- bias or ac ramp voltage used for biasing the probes. DC-biasing of the probe is most common method for getting its I-V characteristic but method of biasing the probe with a sweep at high frequency encounters the problem of corruption of signal due to capacitive effect specially when the sweep period and the discharge time is very fast and die down in the order of μs or lesser. This paper presents and summarises the method of removing such effects encountered while measuring the probe current.

Laser-Assisted Field Evaporation and Three-Dimensional Atom-by-Atom Mapping of Diamond Isotopic Homojunctions.

PubMed

Mukherjee, Samik; Watanabe, Hideyuki; Isheim, Dieter; Seidman, David N; Moutanabbir, Oussama

2016-02-10

It addition to its high evaporation field, diamond is also known for its limited photoabsorption, strong covalent bonding, and wide bandgap. These characteristics have been thought for long to also complicate the field evaporation of diamond and make its control hardly achievable on the atomistic-level. Herein, we demonstrate that the unique behavior of nanoscale diamond and its interaction with pulsed laser lead to a controlled field evaporation thus enabling three-dimensional atom-by-atom mapping of diamond (12)C/(13)C homojunctions. We also show that one key element in this process is to operate the pulsed laser at high energy without letting the dc bias increase out of bounds for diamond nanotip to withstand. Herein, the role of the dc bias in evaporation of diamond is essentially to generate free charge carriers within the nanotip via impact ionization. The mobile free charges screen the internal electric field, eventually creating a hole rich surface where the pulsed laser is effectively absorbed leading to an increase in the nanotip surface temperature. The effect of this temperature on the uncertainty in the time-of-flight of an ion, the diffusion of atoms on the surface of the nanotip, is also discussed. In addition to paving the way toward a precise manipulation of isotopes in diamond-based nanoscale and quantum structures, this result also elucidates some of the basic properties of dielectric nanostructures under high electric field.

Phosphoric acid addition effect on the microstructure and magnetic properties of iron-based soft magnetic composites

NASA Astrophysics Data System (ADS)

Hsiang, Hsing-I.; Fan, Liang-Fang; Hung, Jia-Jing

2018-02-01

The phosphoric acid addition effect on phosphate insulation coating microstructure was investigated in this study. The relationships between the phosphate insulation coating microstructure and temperature resistance, corrosion resistance and magnetic properties of iron-based soft magnetic composites (SMCs) were studied by using SEM, TEM/EDS and FTIR. It was observed that an iron phosphate/carbonyl iron core/shell structure is formed with carbonyl iron powder after phosphatizing treatment. The iron phosphate phase was identified as amorphous and its thickness increased from 30 nm to 60 nm as the phosphoric acid concentration was increased from 1 wt% to 2 wt%. When the phosphoric acid concentration was further increased to 5 wt%, the excess iron phosphate precipitates between the soft magnetic composite particles. The temperature and corrosion resistance and resistivity of the iron-based SMCs can be effectively improved using carbonyl iron powders after phosphatizing. The initial permeability of the iron-based SMCs decreased with increasing phosphoric acid concentration due to thicker insulation layer formation. However, the imaginary permeability below the domain wall displacement resonance frequency decreased with increasing phosphoric acid concentration. The DC-bias superposition characteristic can also be improved by increasing the phosphoric acid concentration. Iron-based SMCs with superior temperature and corrosion resistance, initial permeability, magnetic loss and DC-bias superposition characteristics can be obtained by controlling the phosphoric acid concentration during phosphatizing to adjust the iron phosphate precipitate thickness on the iron powder surface.

Dielectric barrier discharge plasma actuator for flow control

NASA Astrophysics Data System (ADS)

Opaits, Dmitry Florievich

Electrohydrodynamic (EHD) and magnetohydrodynamic phenomena are being widely studied for aerodynamic applications. The major effects of these phenomena are heating of the gas, body force generation, and enthalpy addition or extraction, [1, 2, 3]. In particular, asymmetric dielectric barrier discharge (DBD) plasma actuators are known to be effective EHD device in aerodynamic control, [4, 5]. Experiments have demonstrated their effectiveness in separation control, acoustic noise reduction, and other aeronautic applications. In contrast to conventional DBD actuators driven by sinusoidal voltages, we proposed and used a voltage profile consisting of nanosecond pulses superimposed on dc bias voltage. This produces what is essentially a non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The advantage of this non-self-sustained discharge is that the parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. Experimental studies were conducted of a flow induced in a quiescent room air by a single DBD actuator. A new approach for non-intrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Improving emissions inventories in Mexico through systematic analysis of model performance along C-130 and DC-8 flight tracks during MILAGRO

NASA Astrophysics Data System (ADS)

Mena-Carrasco, M.; Carmichael, G. R.; Campbell, J. E.; Tang, Y.; Chai, T.

2007-05-01

During the MILAGRO campaign in March 2006 the University of Iowa provided regional air quality forecasting for scientific flight planning for the C-130 and DC-8. Model performance showed positive bias of ozone prediction (~15ppbv), associated to overpredictions in precursor concentrations (~2.15 ppbv NOy and ~1ppmv ARO1). Model bias showed a distinct geographical pattern in which the higher values were in and near Mexico City. Newer runs in which NOx and VOC emissions were decreased improved ozone prediction, decreasing bias and increasing model correlation, at the same time reducing regional bias over Mexico. This work will evaluate model performance using the newly published Mexico National Emissions Inventory, and the introduction of data assimilation to recover emissions scaling factors to optimize model performance. Finally the results of sensitivity runs showing the regional impact of Mexico City emissions on ozone concentrations will be shown, along with the influence of Mexico City aerosol concentrations on regional photochemistry.

Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

NASA Astrophysics Data System (ADS)

Lanham, Steven J.; Kushner, Mark J.

2017-08-01

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this paper, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. The dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.

Electrokinetic Response of Charge-Selective Nanostructured Polymeric Membranes

NASA Astrophysics Data System (ADS)

Schiffbauer, Jarrod; Li, Diya; Gao, Feng; Phillip, William; Chang, Hsueh-Chia

2017-11-01

Nanostructured polymeric membranes, with a tunable pore size and ease of surface molecular functionalization, are a promising material for separations, filtration, and sensing applications. Recently, such membranes have been fabricated wherein the ion selectivity is imparted by self-assembled functional groups through a two-step process. Amine groups are used to provide a positive surface charge and acid groups are used to yield a negative charge. The membranes can be fabricated as either singly-charged or patterned/mosaic membranes, where there are alternating regions of amine- lined or acid-lined pores. We demonstrate that such membranes, in addition to having many features in common with other charge selective membranes (i.e. AMX or Nafion), display a unique single-membrane rectification behavior. This is due to the asymmetric distribution of charged functional groups during the fabrication process. We demonstrate this rectification effect using both dc current-voltage characteristics as well as dc-biased electrical impedance spectroscopy. Furthermore, surface charge changes due to dc concentration polarization and generation of localized pH shifts are monitored using electrical impedance spectroscopy. (formerly at University of Notre Dame).

Non-resonant interactions between superconducting circuits coupled through a dc-SQUID

NASA Astrophysics Data System (ADS)

Jin, X. Y.; Lecocq, F.; Cicak, K.; Kotler, S. S.; Peterson, G. A.; Teufel, J. D.; Aumentado, J.; Simmonds, R. W.

We use a flux-biased direct current superconducting quantum interference device (dc-SQUID) to generate non-resonant tunable interactions between transmon qubits and resonators modes. By modulating the flux to the dc-SQUID, we can create an interaction with variable coupling rates from zero to greater than 100 MHz. We explore this system experimentally and describe its operation. Parametric coupling is important for constructing larger coupled systems, useful for both quantum information architectures and quantum simulators.

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Design and realization of assessment software for DC-bias of transformers

NASA Astrophysics Data System (ADS)

Liu, Chang; Liu, Lian-guang; Yuan, Zhong-chen

2013-03-01

The transformer working at the rated state will partically be saturated, and its mangetic current will be distorted accompanying with various of harmonic, increasing reactive power demand and some other affilicated phenomenon, which will threaten the safe operation of power grid. This paper establishes a transformer saturation circuit model of DCbias under duality principle basing on J-A theory which can reflect the hysteresis characteristics of iron core, and develops an software can assess the effects of transformer DC-bias using hybrid programming technology of C#.net and MATLAB with the microsoft.net platform. This software is able to simulate the mangnetizing current of different structures and assess the Saturation Level of transformers and the influnces of affilicated phenomenon accroding to the parameter of transformers and the DC equivalent voltage. It provides an effective method to assess the influnces of transformers caused by magnetic storm disaster and the earthing current of the HVDC project.

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Subsurface imaging of carbon nanotube networks in polymers with DC-biased multifrequency dynamic atomic force microscopy.

PubMed

Thompson, Hank T; Barroso-Bujans, Fabienne; Herrero, Julio Gomez; Reifenberger, Ron; Raman, Arvind

2013-04-05

The characterization of dispersion and connectivity of carbon nanotube (CNT) networks inside polymers is of great interest in polymer nanocomposites in new material systems, organic photovoltaics, and in electrodes for batteries and supercapacitors. We focus on a technique using amplitude modulation atomic force microscopy (AM-AFM) in the attractive regime of operation, using both single and dual mode excitation, which upon the application of a DC tip bias voltage allows, via the phase channel, the in situ, nanoscale, subsurface imaging of CNT networks dispersed in a polymer matrix at depths of 10-100 nm. We present an in-depth study of the origins of phase contrast in this technique and demonstrate that an electrical energy dissipation mechanism in the Coulomb attractive regime is key to the formation of the phase contrast which maps the spatial variations in the local capacitance and resistance due to the CNT network. We also note that dual frequency excitation can, under some conditions, improve the contrast for such samples. These methods open up the possibility for DC-biased amplitude modulation AFM to be used for mapping the variations in local capacitance and resistance in nanocomposites with conducting networks.

Exchange bias effect in CoAl2O4

NASA Astrophysics Data System (ADS)

Mohanty, Prachi; Marik, Sourav; Singh, Ravi P.

2018-04-01

Herein, we report the appearance of a significant exchange bias (EB) effect for the highly frustrated spinel material CoAl2O4. It shows a large value of frustration parameter as observed from the dc susceptibility measurements. CoAl2O4 exhibits the exchange bias effect below 8 K when it is cooled in the presence of a magnetic field. Detailed magnetization measurements indicate that the exchange bias properties of this compound are associated with the frustration present in this material.

Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henderson, T.S.; Ikalainen, P.K.

1995-12-31

The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

DC corona ozone generation enhanced by TiO2 photocatalyst

NASA Astrophysics Data System (ADS)

Pekã¡Rek, S.

2008-12-01

Non-thermal electrical discharges, such as corona discharge are apart of the source of ozone, charged, and excited species and acoustic noise also the source of electromagnetic radiation of different wavelengths. The important component of this radiation from the standpoint of photocatalyst activation is the ultraviolet radiation. We studied the role of UV radiation on corona discharge ozone production by placing the titanium dioxide photocatalyst into the discharge region. We used hollow needle to mesh DC corona discharge at atmospheric pressure with TiO2 globules on the mesh. The discharge was enhanced by the flow of air through the needle. We found that for the needle biased negatively addition of TiO2 photocatalyst on the mesh electrode drastically increases discharge ozone production as well as the ozone production yield. These quantities are also influenced by the mass of the used photocatalyst and its distribution in the discharge chamber.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Design of a 32-Channel EEG System for Brain Control Interface Applications

PubMed Central

Wang, Ching-Sung

2012-01-01

This study integrates the hardware circuit design and the development support of the software interface to achieve a 32-channel EEG system for BCI applications. Since the EEG signals of human bodies are generally very weak, in addition to preventing noise interference, it also requires avoiding the waveform distortion as well as waveform offset and so on; therefore, the design of a preamplifier with high common-mode rejection ratio and high signal-to-noise ratio is very important. Moreover, the friction between the electrode pads and the skin as well as the design of dual power supply will generate DC bias which affects the measurement signals. For this reason, this study specially designs an improved single-power AC-coupled circuit, which effectively reduces the DC bias and improves the error caused by the effects of part errors. At the same time, the digital way is applied to design the adjustable amplification and filter function, which can design for different EEG frequency bands. For the analog circuit, a frequency band will be taken out through the filtering circuit and then the digital filtering design will be used to adjust the extracted frequency band for the target frequency band, combining with MATLAB to design man-machine interface for displaying brain wave. Finally the measured signals are compared to the traditional 32-channel EEG signals. In addition to meeting the IFCN standards, the system design also conducted measurement verification in the standard EEG isolation room in order to demonstrate the accuracy and reliability of this system design. PMID:22778545

Design of a 32-channel EEG system for brain control interface applications.

PubMed

Wang, Ching-Sung

2012-01-01

This study integrates the hardware circuit design and the development support of the software interface to achieve a 32-channel EEG system for BCI applications. Since the EEG signals of human bodies are generally very weak, in addition to preventing noise interference, it also requires avoiding the waveform distortion as well as waveform offset and so on; therefore, the design of a preamplifier with high common-mode rejection ratio and high signal-to-noise ratio is very important. Moreover, the friction between the electrode pads and the skin as well as the design of dual power supply will generate DC bias which affects the measurement signals. For this reason, this study specially designs an improved single-power AC-coupled circuit, which effectively reduces the DC bias and improves the error caused by the effects of part errors. At the same time, the digital way is applied to design the adjustable amplification and filter function, which can design for different EEG frequency bands. For the analog circuit, a frequency band will be taken out through the filtering circuit and then the digital filtering design will be used to adjust the extracted frequency band for the target frequency band, combining with MATLAB to design man-machine interface for displaying brain wave. Finally the measured signals are compared to the traditional 32-channel EEG signals. In addition to meeting the IFCN standards, the system design also conducted measurement verification in the standard EEG isolation room in order to demonstrate the accuracy and reliability of this system design.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Feature Grouping and Selection Over an Undirected Graph.

PubMed

Yang, Sen; Yuan, Lei; Lai, Ying-Cheng; Shen, Xiaotong; Wonka, Peter; Ye, Jieping

2012-01-01

High-dimensional regression/classification continues to be an important and challenging problem, especially when features are highly correlated. Feature selection, combined with additional structure information on the features has been considered to be promising in promoting regression/classification performance. Graph-guided fused lasso (GFlasso) has recently been proposed to facilitate feature selection and graph structure exploitation, when features exhibit certain graph structures. However, the formulation in GFlasso relies on pairwise sample correlations to perform feature grouping, which could introduce additional estimation bias. In this paper, we propose three new feature grouping and selection methods to resolve this issue. The first method employs a convex function to penalize the pairwise l ∞ norm of connected regression/classification coefficients, achieving simultaneous feature grouping and selection. The second method improves the first one by utilizing a non-convex function to reduce the estimation bias. The third one is the extension of the second method using a truncated l 1 regularization to further reduce the estimation bias. The proposed methods combine feature grouping and feature selection to enhance estimation accuracy. We employ the alternating direction method of multipliers (ADMM) and difference of convex functions (DC) programming to solve the proposed formulations. Our experimental results on synthetic data and two real datasets demonstrate the effectiveness of the proposed methods.

Time-lag properties of corona streamer discharges between impulse sphere and dc needle electrodes under atmospheric air conditions.

PubMed

Okano, Daisuke

2013-02-01

In this study of corona streamer discharges from an impulse generator using a dc power supply, the relationship of the discharge time-lag with the dc bias voltage between the sphere-to-needle electrodes under atmospheric conditions is investigated. Devices utilizing corona discharges have been used to purify air or water, destroy bacteria, and to remove undesirable substances, and in order to achieve fast response times and high power efficiencies in such devices, it is important to minimize the time-lag of the corona discharge. Our experimental results show that (a) the discharge path of a negatively biased needle electrode will be straighter than that of a positively biased needle and (b) the discharge threshold voltage in both the positive and the negative needle electrodes is nearly equal to 33 kV. By expressing the discharge voltage as a power function of time-lag, the extent of corona generation can be quantitatively specified using the exponent of this power function. The observed behavior of a corona streamer discharge between the negative spherical and the positive needle electrodes indicates that the largest power exponent is associated with the shortest time-lag, owing to the reduction in the statistical time-lag in the absence of a formative time-lag.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Time-lag properties of corona streamer discharges between impulse sphere and dc needle electrodes under atmospheric air conditions

NASA Astrophysics Data System (ADS)

Okano, Daisuke

2013-02-01

In this study of corona streamer discharges from an impulse generator using a dc power supply, the relationship of the discharge time-lag with the dc bias voltage between the sphere-to-needle electrodes under atmospheric conditions is investigated. Devices utilizing corona discharges have been used to purify air or water, destroy bacteria, and to remove undesirable substances, and in order to achieve fast response times and high power efficiencies in such devices, it is important to minimize the time-lag of the corona discharge. Our experimental results show that (a) the discharge path of a negatively biased needle electrode will be straighter than that of a positively biased needle and (b) the discharge threshold voltage in both the positive and the negative needle electrodes is nearly equal to 33 kV. By expressing the discharge voltage as a power function of time-lag, the extent of corona generation can be quantitatively specified using the exponent of this power function. The observed behavior of a corona streamer discharge between the negative spherical and the positive needle electrodes indicates that the largest power exponent is associated with the shortest time-lag, owing to the reduction in the statistical time-lag in the absence of a formative time-lag.

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Mitsuo; Hatakeyama, Tetsuo; Iwahashi, Yohei; Hayashi, Mariko; Okamoto, Dai; Yano, Hiroshi; Harada, Shinsuke; Yonezawa, Yoshiyuki; Okumura, Hajime

2018-04-01

We investigated methods of measuring the threshold voltage (V th) shift of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under positive DC, negative DC, and AC gate bias stresses. A fast measurement method for V th shift under both positive and negative DC stresses revealed the existence of an extremely large V th shift in the short-stress-time region. We then examined the effect of fast V th shifts on drain current (I d) changes within a pulse under AC operation. The fast V th shifts were suppressed by nitridation. However, the I d change within one pulse occurred even in commercially available SiC MOSFETs. The correlation between I d changes within one pulse and V th shifts measured by a conventional method is weak. Thus, a fast and in situ measurement method is indispensable for the accurate evaluation of I d changes under AC operation.

Creating orbiting vorticity vectors in magnetic particle suspensions through field symmetry transitions–a route to multi-axis mixing

DOE PAGES

Martin, James E.; Solis, Kyle Jameson

2015-11-09

It has recently been reported that two types of triaxial electric or magnetic fields can drive vorticity in dielectric or magnetic particle suspensions, respectively. The first type-symmetry -- breaking rational fields -- consists of three mutually orthogonal fields, two alternating and one dc, and the second type -- rational triads -- consists of three mutually orthogonal alternating fields. In each case it can be shown through experiment and theory that the fluid vorticity vector is parallel to one of the three field components. For any given set of field frequencies this axis is invariant, but the sign and magnitude ofmore » the vorticity (at constant field strength) can be controlled by the phase angles of the alternating components and, at least for some symmetry-breaking rational fields, the direction of the dc field. In short, the locus of possible vorticity vectors is a 1-d set that is symmetric about zero and is along a field direction. In this paper we show that continuous, 3-d control of the vorticity vector is possible by progressively transitioning the field symmetry by applying a dc bias along one of the principal axes. Such biased rational triads are a combination of symmetry-breaking rational fields and rational triads. A surprising aspect of these transitions is that the locus of possible vorticity vectors for any given field bias is extremely complex, encompassing all three spatial dimensions. As a result, the evolution of a vorticity vector as the dc bias is increased is complex, with large components occurring along unexpected directions. More remarkable are the elaborate vorticity vector orbits that occur when one or more of the field frequencies are detuned. As a result, these orbits provide the basis for highly effective mixing strategies wherein the vorticity axis periodically explores a range of orientations and magnitudes.« less

Quadrature mixture LO suppression via DSW DAC noise dither

DOEpatents

Dubbert, Dale F [Cedar Crest, NM; Dudley, Peter A [Albuquerque, NM

2007-08-21

A Quadrature Error Corrected Digital Waveform Synthesizer (QECDWS) employs frequency dependent phase error corrections to, in effect, pre-distort the phase characteristic of the chirp to compensate for the frequency dependent phase nonlinearity of the RF and microwave subsystem. In addition, the QECDWS can employ frequency dependent correction vectors to the quadrature amplitude and phase of the synthesized output. The quadrature corrections cancel the radars' quadrature upconverter (mixer) errors to null the unwanted spectral image. A result is the direct generation of an RF waveform, which has a theoretical chirp bandwidth equal to the QECDWS clock frequency (1 to 1.2 GHz) with the high Spurious Free Dynamic Range (SFDR) necessary for high dynamic range radar systems such as SAR. To correct for the problematic upconverter local oscillator (LO) leakage, precision DC offsets can be applied over the chirped pulse using a pseudo-random noise dither. The present dither technique can effectively produce a quadrature DC bias which has the precision required to adequately suppress the LO leakage. A calibration technique can be employed to calculate both the quadrature correction vectors and the LO-nulling DC offsets using the radar built-in test capability.

Fluidics comparison between dual pneumatic and spring return high-speed vitrectomy systems.

PubMed

Brant Fernandes, Rodrigo A; Diniz, Bruno; Falabella, Paulo; Ribeiro, Ramiro; Teixeira, Anderson G; Magalhães, Octaviano; Moraes, Nilva; Maia, Andre; Farah, Michel E; Maia, Mauricio; Humayun, Mark S

2015-01-01

To compare the water and vitreous flow rates and duty cycle (DC) between two ultrahigh-speed vitrectomy systems: pneumatic with spring return (SR) and dual pneumatic (DP) probes. The flow rate was calculated using a high-sampling precision balance that measured the mass of water and vitreous removed from a vial by a vitreous cutter. Frame-by-frame analysis of a high-speed video of the cutter was used to determine the DC. Three cutters of each gauge (20, 23, and 25 G) were tested with an SR and a DP system using the standard DC setting (biased open) at 0 (water only), 1,000, 2,000, 3,000, 4,000, and 5,000 cuts per minute (CPM) with aspiration levels of 100, 200, 300, 400, 500, and 600 mm Hg. The DC was slightly higher with the SR system using most parameters and gauges although without statistical significance. The water flow rate was somewhat higher with the SR system, except for 25 G with 4,000 and 5,000 CPM. The vitreous flow rate was similar using most parameters, with the SR system showing higher flows at lower cut rates (1,000-3,000 CPM). SR and DP systems produced similar water and vitreous flow rates. Additional studies in human eyes are necessary to confirm these findings. Copyright 2015, SLACK Incorporated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less

Printed Antennas Made Reconfigurable by Use of MEMS Switches

NASA Technical Reports Server (NTRS)

Simons, Rainee N.

2005-01-01

A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.

Feedback model of secondary electron emission in DC gas discharge plasmas

NASA Astrophysics Data System (ADS)

Saravanan, ARUMUGAM; Prince, ALEX; Suraj, Kumar SINHA

2018-01-01

Feedback is said to exist in any amplifier when the fraction of output power in fed back as an input. Similarly, in gaseous discharge ions that incident on the cathode act as a natural feedback element to stabilize and self sustain the discharge. The present investigation is intended to emphasize the feedback nature of ions that emits secondary electrons (SEs) from the cathode surface in DC gas discharges. The average number of SEs emitted per incident ion and non ionic species (energetic neutrals, metastables and photons) which results from ion is defined as effective secondary electron emission coefficient (ESEEC,{γ }{{E}}). In this study, we derive an analytic expression that corroborates the relation between {γ }{{E}} and power influx by ion to the cathode based on the feedback theory of an amplifier. In addition, experimentally, we confirmed the typical positive feedback nature of SEE from the cathode in argon DC glow discharges. The experiment is done for three different cathode material of same dimension (tungsten (W), copper (Cu) and brass) under identical discharge conditions (pressure: 0.45 mbar, cathode bias: -600 V, discharge gab: 15 cm and operating gas: argon). Further, we found that the {γ }{{E}} value of these cathode material controls the amount of feedback power given by ions. The difference in feedback leads different final output i.e the power carried by ion at cathode ({P}{{i}}{\\prime }{| }{{C}}). The experimentally obtained value of {P}{{i}}{\\prime }{| }{{C}} is 4.28 W, 6.87 W and 9.26 W respectively for W, Cu and brass. In addition, the present investigation reveals that the amount of feedback power in a DC gas discharges not only affect the fraction of power fed back to the cathode but also the entire characteristics of the discharge.

Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification

PubMed Central

Gadalla, M. N.; Abdel-Rahman, M.; Shamim, Atif

2014-01-01

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications. PMID:24599374

Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification

NASA Astrophysics Data System (ADS)

Gadalla, M. N.; Abdel-Rahman, M.; Shamim, Atif

2014-03-01

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications.

Design, optimization and fabrication of a 28.3 THz nano-rectenna for infrared detection and rectification.

PubMed

Gadalla, M N; Abdel-Rahman, M; Shamim, Atif

2014-03-06

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications.

Qualitative modeling of silica plasma etching using neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Kwon, Kwang Ho

2003-01-01

An etching of silica thin film is qualitatively modeled by using a neural network. The process was characterized by a 23 full factorial experiment plus one center point, in which the experimental factors and ranges include 100-800 W radio-frequency source power, 100-400 W bias power and gas flow rate ratio CHF3/CF4. The gas flow rate ratio varied from 0.2 to 5.0. The backpropagation neural network (BPNN) was trained on nine experiments and tested on six experiments, not pertaining to the original training data. The prediction ability of the BPNN was optimized as a function of the training parameters. Prediction errors are 180 Å/min and 1.33, for the etch rate and anisotropy models, respectively. Physical etch mechanisms were estimated from the three-dimensional plots generated from the optimized models. Predicted response surfaces were consistent with experimentally measured etch data. The dc bias was correlated to the etch responses to evaluate its contribution. Both the source power (plasma density) and bias power (ion directionality) strongly affected the etch rate. The source power was the most influential factor for the etch rate. A conflicting effect between the source and bias powers was noticed with respect to the anisotropy. The dc bias played an important role in understanding or separating physical etch mechanisms.

Microwave Fiber-Optics Delay Line.

DTIC Science & Technology

1980-01-01

frequency response. We observed the anticipated modulation resonance and its dependence on the dc bias level. However, we did not have a scanning Fabry - Perot ...could not be determined accurately because a scanning Fabry - Perot was not available. However, from the various experimental observations and the rise time...Hitachi HLP-2400U BH laser and a Rockwell heterojunction photodiode o. ......... 26 11 Demodulated rf power versus detector dc photocurrent

Wall charging of a helicon antenna wrapped plasma filled dielectric tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barada, Kshitish K., E-mail: kbarada@physics.ucla.edu; Chattopadhyay, P. K., E-mail: pkchatto@ipr.res.in; Ghosh, J.

2015-01-15

Dielectric wall charging of a cylindrical glass wall surrounded by a helicon antenna of 18 cm length is measured in a linear helicon plasma device with a diverging magnetic field. The ions because of their lesser mobility do not respond to the high frequency electric field and the electrons charge the wall to a negative DC potential also known as the DC self-bias. The wall potential in this device is characterized for different neutral pressure, magnetic field, and radio frequency (RF) power. Axial variation of wall potential shows higher self-bias potentials near the antenna rings. Ion magnetization in the source chambermore » increases both wall charging and plasma potential of the source due to confinement.« less

New quantum oscillations in current driven small junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Gefen, Y.

1985-01-01

The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.

Raman Channel Temperature Measurement of SiC MESFET as a Function of Ambient Temperature and DC Power

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Eldridge, Jeffrey J.; Krainsky, Isay L.

2009-01-01

Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.

Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Bandler, Simon

2011-01-01

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

2010-11-01

A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.

Performance Comparison of Finemet and Metglas Tape Cores Under Non-Sinusoidal Waveforms with DC Bias (POSTPRINT)

DTIC Science & Technology

2017-06-01

dc converter-based test system was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic...the inclusion of distorted waveforms obtained by varying filter capacitance. At higher frequencies, the Metglas cores were found to exhibit greater...was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic inductance of the test system. Both

Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

NASA Astrophysics Data System (ADS)

Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

2018-01-01

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

An Investigation of Ionic Wind Propulsion

NASA Technical Reports Server (NTRS)

Wilson, Jack; Perkins, Hugh D.; Thompson, William K.

2009-01-01

A corona discharge device generates an ionic wind and thrust, when a high voltage corona discharge is struck between sharply pointed electrodes and larger radius ground electrodes. The objective of this study was to examine whether this thrust could be scaled to values of interest for aircraft propulsion. An initial experiment showed that the thrust observed did equal the thrust of the ionic wind. Different types of high voltage electrodes were tried, including wires, knife-edges, and arrays of pins. A pin array was found to be optimum. Parametric experiments, and theory, showed that the thrust per unit power could be raised from early values of 5 N/kW to values approaching 50 N/kW, but only by lowering the thrust produced, and raising the voltage applied. In addition to using DC voltage, pulsed excitation, with and without a DC bias, was examined. The results were inconclusive as to whether this was advantageous. It was concluded that the use of a corona discharge for aircraft propulsion did not seem very practical.

Influence of bias electric field on elastic waves propagation in piezoelectric layered structures.

PubMed

Burkov, S I; Zolotova, O P; Sorokin, B P

2013-08-01

Theoretical and computer investigations of acoustic wave propagation in piezoelectric layered structures, subjected to the dc electric field influence have been fulfilled. Analysis of the dispersive parameters of elastic waves propagation in the BGO/fused silica and fused silica/LiNbO3 piezoelectric layered structures for a number of variants of dc electric field application has been executed. Transformation of bulk acoustic wave into SAW type mode under the dc electric field influence has been found. Possibility to control the permission or prohibition of the wave propagation by the dc electric field application and the appropriate choice of the layer and substrate materials has been discussed. Copyright © 2013 Elsevier B.V. All rights reserved.

Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, Svetozar; Upadhyay, Janardan; Vuskovic, Leposava

2017-12-26

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the innermore » wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.« less

Pulsed discharge ionization source for miniature ion mobility spectrometers

DOEpatents

Xu, Jun; Ramsey, J. Michael; Whitten, William B.

2004-11-23

A method and apparatus is disclosed for flowing a sample gas and a reactant gas (38, 43) past a corona discharge electrode (26) situated at a first location in an ion drift chamber (24), applying a pulsed voltage waveform comprising a varying pulse component and a dc bias component to the corona discharge electrode (26) to cause a corona which in turn produces ions from the sample gas and the reactant gas, applying a dc bias to the ion drift chamber (24) to cause the ions to drift to a second location (25) in the ion drift chamber (24), detecting the ions at the second location (25) in the drift chamber (24), and timing the period for the ions to drift from the corona discharge electrode to the selected location in the drift chamber.

Pass-band reconfigurable spoof surface plasmon polaritons

NASA Astrophysics Data System (ADS)

Zhang, Hao Chi; He, Pei Hang; Gao, Xinxin; Tang, Wen Xuan; Cui, Tie Jun

2018-04-01

In this paper, we introduce a new scheme to construct the band-pass tunable filter based on the band-pass reconfigurable spoof surface plasmon polaritons (SPPs), whose cut-off frequencies at both sides of the passband can be tuned through changing the direct current (DC) bias of varactors. Compared to traditional technology (e.g. microstrip filters), the spoof SPP structure can provide more tight field confinement and more significant field enhancement, which is extremely valuable for many system applications. In order to achieve this scheme, we proposed a specially designed SPP filter integrated with varactors and DC bias feeding structure to support the spoof SPP passband reconfiguration. Furthermore, the full-wave simulated result verifies the outstanding performance on both efficiency and reconfiguration, which has the potential to be widely used in advanced intelligent systems.

Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1 T -TaS2

NASA Astrophysics Data System (ADS)

Ma, Yongchang; Hou, Yanhui; Lu, Cuimin; Li, Lijun; Petrovic, Cedomir

2018-05-01

The electric field dependence of the dielectric properties and the nonlinear conductance of 1 T -TaS2 below 50 K has been investigated. A large dielectric constant of about 104 is obtained up to 107 Hz, which cannot be attributed to hopping of the localized carriers alone, the collective excitations of the commensurate charge-density-wave must be another contributor. The dielectric spectra disperse slightly in our measured temperature and frequency range. At a moderate dc bias field, the real part of the dielectric constant ɛ1(ω ) decreases. We propose that the separation of bound soliton-antisoliton pairs may be a contributor to the reduction of ɛ1(ω ) and the accompanying nonlinear conductivity with increasing dc bias.

Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

NASA Astrophysics Data System (ADS)

Li, X.; Zhou, Y.; Zheng, C.; Chan, P. H.; Chan, M.; Pong, Philip W. T.

2016-11-01

The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.

Mechanical Pre-Stressing a Transducer through a Negative DC Biasing Field

DTIC Science & Technology

2017-04-21

13  ii LIST OF ABBREVIATIONS AND ACRONYMS AC Alternating Current DC Direct Currant FEA Finite Element Analysis NUWC Naval...at resonance into tension is shown in figure 3; it was estimated from finite element analysis (FEA) that the tensional stresses exceeded 2000 psi...PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Stephen C. Butler 5.d PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION

A Design Methodology for Switched-Capacitor DC-DC Converters

DTIC Science & Technology

2009-05-21

phase piezoelectric energy harvesters ,” IEEE International Solid-State Circuits Conference, pp. 302–303, Feb. 2008. [20] P. Hazucha, G. Schrom, J. Hahn...2007. [42] Y. K. Ramadass and A. P. Chandrakasan, “An efficient piezoelectric energy- harvesting interface circuit using a bias-flip rectifier and...made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to

Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pock, J. F. von; Salloch, D.; Qiao, G.

2016-04-07

Quantum point contacts (QPCs) are fabricated on modulation-doped Si/SiGe heterostructures and ballistic transport is studied at low temperatures. We observe quantized conductance with subband separations up to 4 meV and anomalies in the first conductance plateau at 4e{sup 2}/h. At a temperature of T = 22 mK in the linear transport regime, a weak anomalous kink structure arises close to 0.5(4e{sup 2}/h), which develops into a distinct plateau-like structure as temperature is raised up to T = 4 K. Under magnetic field parallel to the wire up to B = 14 T, the anomaly evolves into the Zeeman spin-split level at 0.5(4e{sup 2}/h), resembling the '0.7 anomaly' in GaAs/AlGaAsmore » QPCs. Additionally, a zero-bias anomaly (ZBA) is observed in nonlinear transport spectroscopy. At T = 22 mK, a parallel magnetic field splits the ZBA peak up into two peaks. At B = 0, elevated temperatures lead to similar splitting, which differs from the behavior of ZBAs in GaAs/AlGaAs QPCs. Under finite dc bias, the differential resistance exhibits additional plateaus approximately at 0.8(4e{sup 2}/h) and 0.2(4e{sup 2}/h) known as '0.85 anomaly' and '0.25 anomaly' in GaAs/AlGaAs QPCs. Unlike the first regular plateau at 4e{sup 2}/h, the 0.2(4e{sup 2}/h) plateau is insensitive to dc bias voltage up to at least V{sub DS} = 80 mV, in-plane magnetic fields up to B = 15 T, and to elevated temperatures up to T = 25 K. We interpret this effect as due to pinching off one of the reservoirs close to the QPC. We do not see any indication of lifting of the valley degeneracy in our samples.« less

A scanning tunneling microscope break junction method with continuous bias modulation.

PubMed

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.;

Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, Jr., William B.; McNeilly, David R.

1984-01-01

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, W.B. Jr.; McNeilly, D.R.

1983-10-04

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.

Two-range magnetoelectric sensor

NASA Astrophysics Data System (ADS)

Bichurin, M.; Petrov, V.; Leontyev, V.; Saplev, A.

2017-01-01

In this study, we present a two-range magnetoelectric ME sensor design comprising of permendur (alloy of Fe-Co-V), nickel, and lead zirconate titanate (PZT) laminate composite. A systematic study was conducted to clarify the contribution of magnetostrictive layers variables to the ME response over the applied range of magnetic bias field. The two-range behavior was characterized by opposite sign of the ME response when magnetic dc bias is in different sub-ranges. The ME coefficient as a function of magnetic bias field was found to be dependent on the laminate composite structure.

Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dyer, G. C.; Olson, B. V.; Hawkins, S. D.

2016-01-04

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

NASA Astrophysics Data System (ADS)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction cells are also considered for possible higher frequency ZPE transduction. Diode arrays of self-assembled molecular rectifiers or preferably, nano-sized cylindrical diodes are shown to reasonably provide for rectification of electron fluctuations from thermal and non-thermal ZPE sources to create an alternative energy DC electrical generator in the picowatt per diode range.

Influence of the Biasing Scheme on the Performance of Au/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Tunable Ring Resonators

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Romanofsky, R. R.; Bohman, D. Y.; Miranda, F. A.

1998-01-01

The performance of gold/SrTio3 /LaAlO3 conductor/ferroelectric/dielectric side-coupled, tunable ring resonators at K-band frequencies is presented. The tunability of these rings arises from the sensitivity of the relative dielectric constant (Er) of SrTiO 3 to changes in temperature and dc electric fields (E). We observed that the change in F-, which takes place by biasing the ring up to 450 V alters the effective dielectric constant (e-eff) of the circuit resulting in a 3k resonant frequency shift of nearly 12 % at 77 K. By applying a separate dc bias between the microstrip line and the ring, one can optimize their coupling to obtain bandstop resonators with unloaded quality factors (Q(sub o)) as high as 12,000. The 31 resonance was tuned from 15.75 to 17.41 GHz while keeping Q. above 768 over this range. The relevance of these results for practical microwave components will be discussed.

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

PubMed Central

Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

2015-01-01

In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO2) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions. PMID:28793679

Efficiency enhancement using voltage biasing for ferroelectric polarization in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kim, Sangmo; Song, Myoung Geun; Bark, Chung Wung

2018-01-01

Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells that have been extensively researched over the past decade as alternative to silicon-based solar cells, due to their low production cost and high energy-conversion efficiency. In general, a DSSC consists of a transparent electrode, a counter electrode, and an electrolyte such as dye. To achieve high power-conversion efficiency in cells, many research groups have focused their efforts on developing efficient dyes for liquid electrolytes. In this work, we report on the photovoltaic properties of DSSCs fabricated using a mixture of TiO2 with nanosized Fe-doped bismuth lanthanum titanate (nFe-BLT) powder). Firstly, nFe-BLT powders were prepared using a high-energy ball milling process and then, TiO2 and nFe-BLT powders were stoichiometrically blended. Direct current (DC) bias of 20 MV/m was applied to lab-made DSSCs. With the optimal concentration of nFe-BLT doped in the electrode, their light-to-electricity conversion efficiency could be improved by ∼64% compared with DSSCs where no DC bias was applied.

Palliative Care and Hospice Interventions in Decompensated Cirrhosis and Hepatocellular Carcinoma: A Rapid Review of Literature.

PubMed

Mudumbi, Sandhya K; Bourgeois, Claire E; Hoppman, Nicholas A; Smith, Catherine H; Verma, Manisha; Bakitas, Marie A; Brown, Cynthia J; Markland, Alayne D

2018-04-26

Patients with decompensated cirrhosis (DC) and/or hepatocellular carcinoma (HCC) have a high symptom burden and mortality and may benefit from palliative care (PC) and hospice interventions. Our aim was to search published literature to determine the impact of PC and hospice interventions for patients with DC/HCC. We searched electronic databases for adults with DC/HCC who received PC, using a rapid review methodology. Data were extracted for study design, participant and intervention characteristics, and three main groups of outcomes: healthcare resource utilization (HRU), end-of-life care (EOLC), and patient-reported outcomes. Of 2466 results, eight were included in final results. There were six retrospective cohort studies, one prospective cohort, and one quality improvement study. Five of eight studies had a high risk of bias and seven studied patients with HCC. A majority found a reduction in HRU (total cost of hospitalization, number of emergency department visits, hospital, and critical care admissions). Some studies found an impact on EOLC, including location of death (less likely to die in the hospital) and resuscitation (less likely to have resuscitation). One study evaluated survival and found hospice had no impact and another showed improvement of symptom burden. Studies included suggest that PC and hospice interventions in patients with DC/HCC reduce HRU, impact EOLC, and improve symptoms. Given the few number of studies, heterogeneity of interventions and outcomes, and high risk of bias, further high-quality research is needed on PC and hospice interventions with a greater focus on DC.

Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

NASA Astrophysics Data System (ADS)

Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Yurko, E. I.

2014-02-01

Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO3(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U bias = 40 V is K ≅ 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U st ˜ 0.7-1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.

Electrical properties of PMMA ion-implanted with low-energy Si+ beam

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Gueorguiev, V. K.; Ivanov, Tz E.; Marinov, Y. G.; Ivanov, V. G.; Faulques, E.

2010-01-01

The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 - 1017 cm-2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.

(GameChanger) Multifunctional Design of Hybrid Composites of Load Bearing Antennas

DTIC Science & Technology

2011-06-01

5 . Solvent Effect in Dynamic Superstructures from Au Nanoparticles and CdTe Nanowires: Experimental Observation and Theoretical Description , J. Phys...the magnetic bias is transverse to the propagation direction and the plane of the thin films . Such field displacement effect is used in several...within the structure, resulting from the material properties of the media. The magnetoelectric thin film with a DC magnetic field bias serves as a

Microwave switching power divider. [antenna feeds

NASA Technical Reports Server (NTRS)

Stockton, R. J.; Johnson, R. W. (Inventor)

1981-01-01

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.

Time-dependent photon heat transport through a mesoscopic Josephson device

NASA Astrophysics Data System (ADS)

Lu, Wen-Ting; Zhao, Hong-Kang

2017-02-01

The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green's function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heat branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction.

Spectral properties of rf emission from high Tc films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, G.; Konopka, J.; Vitale, S.

1990-09-15

Spectral properties of rf radiation from intrinsic Josephson junctions in high {Tc} Y-Ba-Cu-O thin film have been measured in the frequency range up to 1.5 GHz. Narrow emission lines with the 3 dB bandwidth of the order of 20 MHz were detected indicating that Josephson clusters radiate coherently. Synchronization conditions are determined by dc current and external magnetic field bias. Frequency locking of radiation to external resonant circuit was also observed. Spectral line narrowing due to resonant lock was distinguished from the coherence-induced narrowing by different tuning properties of the emission line. Noncoherent Josephson radiation manifests itself as a broadbandmore » background noise increase. A pronounced 1/{ital f}-like tail sensitive to dc bias and magnetic field was observed in a low frequency part of the spectrum.« less

Influence of finite geometrical asymmetry of the electrodes in capacitively coupled radio frequency plasma

NASA Astrophysics Data System (ADS)

Bora, B.; Soto, L.

2014-08-01

Capacitively coupled radio frequency (CCRF) plasmas are widely studied in last decades due to the versatile applicability of energetic ions, chemically active species, radicals, and also energetic neutral species in many material processing fields including microelectronics, aerospace, and biology. A dc self-bias is known to generate naturally in geometrically asymmetric CCRF plasma because of the difference in electrode sizes known as geometrical asymmetry of the electrodes in order to compensate electron and ion flux to each electrode within one rf period. The plasma series resonance effect is also come into play due to the geometrical asymmetry and excited several harmonics of the fundamental in low pressure CCRF plasma. In this work, a 13.56 MHz CCRF plasma is studied on the based on the nonlinear global model of asymmetric CCRF discharge to understand the influences of finite geometrical asymmetry of the electrodes in terms of generation of dc self-bias and plasma heating. The nonlinear global model on asymmetric discharge has been modified by considering the sheath at the grounded electrode to taking account the finite geometrical asymmetry of the electrodes. The ion density inside both the sheaths has been taken into account by incorporating the steady-state fluid equations for ions considering that the applied rf frequency is higher than the typical ion plasma frequency. Details results on the influences of geometrical asymmetry on the generation of dc self-bias and plasma heating are discussed.

Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

NASA Astrophysics Data System (ADS)

Corbella, C.; Rubio-Roy, M.; Bertran, E.; Portal, S.; Pascual, E.; Polo, M. C.; Andújar, J. L.

2011-02-01

The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH4) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).

RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less

Vector network analyzer ferromagnetic resonance spectrometer with field differential detection

NASA Astrophysics Data System (ADS)

Tamaru, S.; Tsunegi, S.; Kubota, H.; Yuasa, S.

2018-05-01

This work presents a vector network analyzer ferromagnetic resonance (VNA-FMR) spectrometer with field differential detection. This technique differentiates the S-parameter by applying a small binary modulation field in addition to the DC bias field to the sample. By setting the modulation frequency sufficiently high, slow sensitivity fluctuations of the VNA, i.e., low-frequency components of the trace noise, which limit the signal-to-noise ratio of the conventional VNA-FMR spectrometer, can be effectively removed, resulting in a very clean FMR signal. This paper presents the details of the hardware implementation and measurement sequence as well as the data processing and analysis algorithms tailored for the FMR spectrum obtained with this technique. Because the VNA measures a complex S-parameter, it is possible to estimate the Gilbert damping parameter from the slope of the phase variation of the S-parameter with respect to the bias field. We show that this algorithm is more robust against noise than the conventional algorithm based on the linewidth.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter.

PubMed

Gottardi, L; Adams, J; Bailey, C; Bandler, S; Bruijn, M; Chervenak, J; Eckart, M; Finkbeiner, F; den Hartog, R; Hoevers, H; Kelley, R; Kilbourne, C; de Korte, P; van der Kuur, J; Lindeman, M; Porter, F; Sadlier, J; Smith, S

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Δ E FWHM =3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterised the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

Dielectric Barrier Discharge Plasma Actuator for Flow Control

NASA Technical Reports Server (NTRS)

Opaits, Dmitry, F.

2012-01-01

This report is Part II of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. It includes a Ph.D. dissertation. The period of performance was January 1, 2007 to December 31, 2010. Part I of the final report is the overview published as NASA/CR-2012- 217654. Asymmetric dielectric barrier discharge (DBD) plasma actuators driven by nanosecond pulses superimposed on dc bias voltage are studied experimentally. This produces non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. The approach consisted of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Sillassen, M.; Eklund, P.; Sridharan, M.; Pryds, N.; Bonanos, N.; Bøttiger, J.

2009-05-01

Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr-Y (80/20 at. %) alloy target. Films deposited at floating potential had a ⟨111⟩ texture. Single-line profile analysis of the 111 x-ray diffraction peak yielded a grain size of ˜20 nm and a microstrain of ˜2% regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from -70 to -200 V showed a reduced grain size for higher bias voltages, yielding a grain size of ˜6 nm and a microstrain of ˜2.5% at bias voltages of -175 and -200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.14 and 1.30 eV.

Measurement of sheath potential by three emissive-probe methods in DC filament plasmas near a biased grid

NASA Astrophysics Data System (ADS)

Kang, In-Je; Park, In-Sun; Wackerbarth, Eugene; Bae, Min-Keun; Hershkowitz, Noah; Severn, Greg; Chung, Kyu-Sun

2017-10-01

Plasma potential structures are measured with an emissive probe near a negatively biased grid ( - 100 V , 80mm diam., 40 lines/cm) immersed in a hot filament DC discharge in Kr. Three different methods of analysis are compared: inflection point (IP), floating potential (FP) and separation point (SE) methods. The plasma device at the University of San Diego (length = 64 cm, diameter = 32 cm, source = filament DC discharge) was operated with 5 ×108

21 CFR 74.2602 - D&C Violet No. 2.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2602 D&C Violet No. 2. (a) Identity and specifications. The color additive D&C Violet No. 2 shall conform in identity and specifications to the requirements of § 74.1602(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Violet No. 2 may be...

21 CFR 74.2602 - D&C Violet No. 2.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2602 D&C Violet No. 2. (a) Identity and specifications. The color additive D&C Violet No. 2 shall conform in identity and specifications to the requirements of § 74.1602(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Violet No. 2 may be...

21 CFR 74.2602 - D&C Violet No. 2.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2602 D&C Violet No. 2. (a) Identity and specifications. The color additive D&C Violet No. 2 shall conform in identity and specifications to the requirements of § 74.1602(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Violet No. 2 may be...

21 CFR 74.2602 - D&C Violet No. 2.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2602 D&C Violet No. 2. (a) Identity and specifications. The color additive D&C Violet No. 2 shall conform in identity and specifications to the requirements of § 74.1602(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Violet No. 2 may be...

Power connect safety and connection interlock

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor)

1992-01-01

A power connect safety and connection interlock system is shown for use with inverters and other DC loads (16) which include capacitor filter banks (14) at their DC inputs. A safety circuit (20) operates a spring (26) biased, solenoid (22) driven mechanical connection interference (24) which prevents mating and therefore electrical connection between the power contactor halves (11, 13) of the main power contacts (12) until the capacitor bank is safely precharged through auxiliary contacts (18). When the DC load (16) is shut down, the capacitor bank (14) is automatically discharged through a discharging power resistor (66) by a MOSFET transistor (60) through a discharging power resistor (66) only when both the main power contacts and auxiliary contacts are disconnected.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

NASA Astrophysics Data System (ADS)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu; Alves, Fabio, E-mail: falves@alionscience.com

2016-01-15

Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to bemore » sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.« less

Characteristics of space charge formed in a laminated LDPE/EVA dielectric under DC stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Toshikatsu; Kisanuki, Osamu; Sakata, Masataka

1996-12-31

A laser-induced pressure pulse (LIPP) method was used for measuring the space charge distribution of LDPE/EVA laminate dielectrics under dc stress. The constant voltage up to {+-}20 kV was applied to a side of the laminates of 0.5 mm thickness for 30 minutes. The other side is grounded. When the amount of space charge was measured by LIPP, both sides were virtually grounded. Space charge built up in or near the interface between LDPE and EVA was mainly investigated. Positive and negative voltage was applied to the side of LDPE in the laminates. It was clarified that the space chargemore » was larger in case of LDPE negatively biased than in case of LDPE positively biased. The density of the space charge ranged around 1 nC/mm{sup 3}. The formation of interfacial space charge is analyzed.« less

Parametric Characterization of TES Detectors Under DC Bias

NASA Technical Reports Server (NTRS)

Chiao, Meng P.; Smith, Stephen James; Kilbourne, Caroline A.; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Ewin, Audrey J.;

Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization.

PubMed

Zhang, H-S; Komvopoulos, K

2008-07-01

Filtered cathodic vacuum arc (FCVA) deposition is characterized by plasma beam directionality, plasma energy adjustment via substrate biasing, macroparticle filtering, and independent substrate temperature control. Between the two modes of FCVA deposition, namely, direct current (dc) and pulsed arc, the dc mode yields higher deposition rates than the pulsed mode. However, maintaining the dc arc discharge is challenging because of its inherent plasma instabilities. A system generating a special configuration of magnetic field that stabilizes the dc arc discharge during film deposition is presented. This magnetic field is also part of the out-of-plane magnetic filter used to focus the plasma beam and prevent macroparticle film contamination. The efficiency of the plasma-stabilizing magnetic-field mechanism is demonstrated by the deposition of amorphous carbon (a-C) films exhibiting significantly high hardness and tetrahedral carbon hybridization (sp3) contents higher than 70%. Such high-quality films cannot be produced by dc arc deposition without the plasma-stabilizing mechanism presented in this study.

Coatings for wear and lubrication

NASA Technical Reports Server (NTRS)

Spalvins, T.

1978-01-01

Recent advances in the tribological uses of rf-sputtered and ion plated films of solid film lubricants (laminar solids, soft metals, organic polymers) and wear resistant refractory compounds (carbides, nitrides, silicides) are reviewed. The sputtering and ion plating potentials and the corresponding coatings formed were evaluated relative to the friction coefficient, wear endurance life and mechanical properties. The tribological and mechanical properties for each kind of film are discussed in terms of film adherence, coherence, density, grain size, morphology, internal stresses, thickness, and substrate conditions such as temperature, topography, chemistry and dc-biasing. The ion plated metallic films in addition to improved tribological properties also have better mechanical properties such as tensile strength and fatigue life.

High extinction ratio terahertz wire-grid polarizers with connecting bridges on quartz substrates.

PubMed

Cetnar, John S; Vangala, Shivashankar; Zhang, Weidong; Pfeiffer, Carl; Brown, Elliott R; Guo, Junpeng

2017-03-01

A terahertz (THz) wire-grid polarizer with metallic bridges on a quartz substrate was simulated, fabricated, and tested. The device functions as a wide-band polarizer to incident THz radiation. In addition, the metallic bridges permit the device to function as a transparent electrode when a DC bias is applied to it. Three design variations of the polarizer with bridges and a polarizer without bridges were studied. Results show the devices with bridges have average s-polarization transmittance of less than -3  dB and average extinction ratios of approximately 40 dB across a frequency range of 220-990 GHz and thus are comparable to a polarizer without bridges.

21 CFR 74.2307 - D&C Red No. 7

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2307 D&C Red No. 7 (a) Identity and specifications. The color additive D&C Red No. 7 shall conform in identity and specifications to the requirements of § 74.1307 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 7 may be safely used for...

21 CFR 74.2306 - D&C Red No. 6.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2306 D&C Red No. 6. (a) Identity and specifications.The color additive D&C Red No. 6 shall conform in identity and specifications to the requirements of § 74.1306 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 6 may be safely used for...

21 CFR 74.2321 - D&C Red No. 21.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2321 D&C Red No. 21. (a) Identity and specifications. The color additive D&C Red No. 21 shall conform in identity and specifications to the requirements of § 74.1321(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 21 may be safely used for...

21 CFR 74.2322 - D&C Red No. 22.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2322 D&C Red No. 22. (a) Identity and specifications. The color additive D&C Red No. 22 shall conform in identity and specifications to the requirements of § 74.1322(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 22 may be safely used for...

21 CFR 74.2321 - D&C Red No. 21.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2321 D&C Red No. 21. (a) Identity and specifications. The color additive D&C Red No. 21 shall conform in identity and specifications to the requirements of § 74.1321(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 21 may be safely used for...

21 CFR 74.2307 - D&C Red No. 7

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2307 D&C Red No. 7 (a) Identity and specifications. The color additive D&C Red No. 7 shall conform in identity and specifications to the requirements of § 74.1307 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 7 may be safely used for...

21 CFR 74.2322 - D&C Red No. 22.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2322 D&C Red No. 22. (a) Identity and specifications. The color additive D&C Red No. 22 shall conform in identity and specifications to the requirements of § 74.1322(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 22 may be safely used for...

21 CFR 74.2322 - D&C Red No. 22.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2322 D&C Red No. 22. (a) Identity and specifications. The color additive D&C Red No. 22 shall conform in identity and specifications to the requirements of § 74.1322(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 22 may be safely used for...

21 CFR 74.2321 - D&C Red No. 21.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2321 D&C Red No. 21. (a) Identity and specifications. The color additive D&C Red No. 21 shall conform in identity and specifications to the requirements of § 74.1321(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 21 may be safely used for...

21 CFR 74.2321 - D&C Red No. 21.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2321 D&C Red No. 21. (a) Identity and specifications. The color additive D&C Red No. 21 shall conform in identity and specifications to the requirements of § 74.1321(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 21 may be safely used for...

21 CFR 74.2307 - D&C Red No. 7

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2307 D&C Red No. 7 (a) Identity and specifications. The color additive D&C Red No. 7 shall conform in identity and specifications to the requirements of § 74.1307 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 7 may be safely used for...

21 CFR 74.2306 - D&C Red No. 6.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2306 D&C Red No. 6. (a) Identity and specifications.The color additive D&C Red No. 6 shall conform in identity and specifications to the requirements of § 74.1306 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 6 may be safely used for...

21 CFR 74.2322 - D&C Red No. 22.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2322 D&C Red No. 22. (a) Identity and specifications. The color additive D&C Red No. 22 shall conform in identity and specifications to the requirements of § 74.1322(a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 22 may be safely used for...

21 CFR 74.2306 - D&C Red No. 6.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2306 D&C Red No. 6. (a) Identity and specifications.The color additive D&C Red No. 6 shall conform in identity and specifications to the requirements of § 74.1306 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 6 may be safely used for...

21 CFR 74.2306 - D&C Red No. 6.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2306 D&C Red No. 6. (a) Identity and specifications.The color additive D&C Red No. 6 shall conform in identity and specifications to the requirements of § 74.1306 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 6 may be safely used for...

21 CFR 74.2307 - D&C Red No. 7

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2307 D&C Red No. 7 (a) Identity and specifications. The color additive D&C Red No. 7 shall conform in identity and specifications to the requirements of § 74.1307 (a)(1) and (b). (b) Uses and restrictions. The color additive D&C Red No. 7 may be safely used for...

Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above  ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of  ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.

Processing of Emotional Faces in Patients with Chronic Pain Disorder: An Eye-Tracking Study.

PubMed

Giel, Katrin Elisabeth; Paganini, Sarah; Schank, Irena; Enck, Paul; Zipfel, Stephan; Junne, Florian

2018-01-01

Problems in emotion processing potentially contribute to the development and maintenance of chronic pain. Theories focusing on attentional processing have suggested that dysfunctional attention deployment toward emotional information, i.e., attentional biases for negative emotions, might entail one potential developmental and/or maintenance factor of chronic pain. We assessed self-reported alexithymia, attentional orienting to and maintenance on emotional stimuli using eye tracking in 17 patients with chronic pain disorder (CP) and two age- and sex-matched control groups, 17 healthy individuals (HC) and 17 individuals who were matched to CP according to depressive symptoms (DC). In a choice viewing paradigm, a dot indicated the position of the emotional picture in the next trial to allow for strategic attention deployment. Picture pairs consisted of a happy or sad facial expression and a neutral facial expression of the same individual. Participants were asked to explore picture pairs freely. CP and DC groups reported higher alexithymia than the HC group. HC showed a previously reported emotionality bias by preferentially orienting to the emotional face and preferentially maintaining on the happy face. CP and DC participants showed no facilitated early attention to sad facial expressions, and DC participants showed no facilitated early attention to happy facial expressions, while CP and DC participants did. We found no group differences in attentional maintenance. Our findings are in line with the clinical large overlap between pain and depression. The blunted initial reaction to sadness could be interpreted as a failure of the attentional system to attend to evolutionary salient emotional stimuli or as an attempt to suppress negative emotions. These difficulties in emotion processing might contribute to etiology or maintenance of chronic pain and depression.

Degradation and recovery of iron doped barium titanate single crystals via modulus spectroscopy and thermally stimulated depolarization current

NASA Astrophysics Data System (ADS)

Carter, J. J.; Bayer, T. J. M.; Randall, C. A.

2017-04-01

Understanding resistance degradation during the application of DC bias and recovery after removing the DC bias provides insight into failure mechanisms and defects in dielectric materials. In this experiment, modulus spectroscopy and thermally stimulated depolarization current (TSDC) techniques were used to characterize the degradation and recovery of iron-doped barium titanate single crystals. Modulus spectroscopy is a very powerful analytical tool applied during degradation and recovery to observe changes in the local conductivity distribution. During degradation, oxygen vacancies migrate to the cathode region, and a counter flow of oxygen anions migrates towards the anode. With increasing time during degradation, the distribution of conductivity broadens only slightly exhibiting crucial differences to iron doped strontium titanate. After removing the DC bias, the recovery shows that a second previously unobserved and distinct conductivity maximum arises in the modulus data. This characteristic with two maxima related to different conductivities in the anode and cathode region is what can be expected from the published defect chemistry. It will be concluded that only the absence of an external electric field during recovery measurements permits the observation of local conductivity measurements without the presence of non-equilibrium conditions such as charge injection. Equilibrium conductivity as a function of oxygen vacancy concentration is described schematically. Oxygen vacancy migration during degradation and recovery is verified by TSDC analysis. We establish a self-consistent rationale of the transient changes in the modulus and TSDC for the iron doped barium titanate single crystal system including electron, hole and oxygen vacancy conductivity. During degradation, the sample fractured.

Center conductor diagnostic for multipactor detection in inaccessible geometries

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.; Hubble, Aimee A.; Clements, Kathryn A.; Graves, Timothy P.

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying VD C/VR F 0 <0.8 , where VRF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting VD C/VR F 0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all—this is the preferred implementation, but biases in the range VD C=0 -10 V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

21 CFR 74.1321 - D&C Red No. 21.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1321 D&C Red No. 21. (a) Identity. (1) The color additive D&C... (CAS Reg. No. 25709-84-6). The color additive is manufactured by brominating fluorescein with elemental... anhydride. The fluorescein is isolated and partially purified prior to bromination. (2) Color additive...

Temperature dependence of exchange bias in (NiFe/IrMn)n multilayer films studied through static and dynamic techniques

NASA Astrophysics Data System (ADS)

Adams, Daniel J.; Khanal, Shankar; Khan, Mohammad Asif; Maksymov, Artur; Spinu, Leonard

2018-05-01

The in-plane temperature dependence of exchange bias was studied through both dc magnetometry and ferromagnetic resonance spectroscopy in a series of [NiFe/IrMn]n multilayer films, where n is the number of layer repetitions. Major hysteresis loops were recorded in the temperature range of 300 K to 2 K to reveal the effect of temperature on the exchange bias in the static regime while temperature-dependent continuous-wave ferromagnetic resonance for frequencies from 3 to 16 GHz was used to determine the exchange bias dynamically. Strong divergence between the values of exchange bias determined using the two different types of measurements as well as a peak in temperature dependence of the resonance linewidth were observed. These results are explained in terms of the slow-relaxer mechanism.

Tunable features of magnetoelectric transformers.

PubMed

Dong, Shuxiang; Zhai, Junyi; Priya, Shashank; Li, Jie-Fang; Viehland, Dwight

2009-06-01

We have found that magnetostrictive FeBSiC alloy ribbons laminated with piezoelectric Pb(Zr,Ti)O(3) fiber can act as a tunable transformer when driven under resonant conditions. These composites were also found to exhibit the strongest resonant magnetoelectric voltage coefficient of 750 V/cm-Oe. The tunable features were achieved by applying small dc magnetic biases of -5

Noise Intensity-Intensity Correlations and the Fourth Cumulant of Photo-assisted Shot Noise

NASA Astrophysics Data System (ADS)

Forgues, Jean-Charles; Sane, Fatou Bintou; Blanchard, Simon; Spietz, Lafe; Lupien, Christian; Reulet, Bertrand

2013-10-01

We report the measurement of the fourth cumulant of current fluctuations in a tunnel junction under both dc and ac (microwave) excitation. This probes the non-Gaussian character of photo-assisted shot noise. Our measurement reveals the existence of correlations between noise power measured at two different frequencies, which corresponds to two-mode intensity correlations in optics. We observe positive correlations, i.e. photon bunching, which exist only for certain relations between the excitation frequency and the two detection frequencies, depending on the dc bias of the sample.

MBE System for Antimonide Based Semiconductor Lasers

DTIC Science & Technology

1999-01-31

selectivity are reported as a function of plasma chemistry and DC self-bias. Experiment The samples used in this study are undoped bulk GaSb, InSb...Phys. Lett. 64(13), 1673-1675 (1994). 8. J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson, and F. Ren, Plasma Chemistry and...AlGaAsSb are reported as functions of plasma chemistry , ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering desorption of

21 CFR 74.1334 - D&C Red No. 34.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1334 D&C Red No. 34. (a) Identity. (1) The color additive D&C...-carboxylic acid. (2) Color additive mixtures for drug use made with D&C Red No. 34 may contain only those diluents that are suitable and that are listed in part 73 of this chapter as safe for use in color additive...

21 CFR 74.1334 - D&C Red No. 34.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1334 D&C Red No. 34. (a) Identity. (1) The color additive D&C...-carboxylic acid. (2) Color additive mixtures for drug use made with D&C Red No. 34 may contain only those diluents that are suitable and that are listed in part 73 of this chapter as safe for use in color additive...

21 CFR 74.1334 - D&C Red No. 34.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1334 D&C Red No. 34. (a) Identity. (1) The color additive D&C...-carboxylic acid. (2) Color additive mixtures for drug use made with D&C Red No. 34 may contain only those diluents that are suitable and that are listed in part 73 of this chapter as safe for use in color additive...

21 CFR 74.1334 - D&C Red No. 34.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1334 D&C Red No. 34. (a) Identity. (1) The color additive D&C...-carboxylic acid. (2) Color additive mixtures for drug use made with D&C Red No. 34 may contain only those diluents that are suitable and that are listed in part 73 of this chapter as safe for use in color additive...

Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.

Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

PubMed Central

Kolenda, Stefan; Machon, Peter

2016-01-01

Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime. Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction. Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators. PMID:28144509

The Isolation and Enrichment of Large Numbers of Highly Purified Mouse Spleen Dendritic Cell Populations and Their In Vitro Equivalents.

PubMed

Vremec, David

2016-01-01

Dendritic cells (DCs) form a complex network of cells that initiate and orchestrate immune responses against a vast array of pathogenic challenges. Developmentally and functionally distinct DC subtypes differentially regulate T-cell function. Importantly it is the ability of DC to capture and process antigen, whether from pathogens, vaccines, or self-components, and present it to naive T cells that is the key to their ability to initiate an immune response. Our typical isolation procedure for DC from murine spleen was designed to efficiently extract all DC subtypes, without bias and without alteration to their in vivo phenotype, and involves a short collagenase digestion of the tissue, followed by selection for cells of light density and finally negative selection for DC. The isolation procedure can accommodate DC numbers that have been artificially increased via administration of fms-like tyrosine kinase 3 ligand (Flt3L), either directly through a series of subcutaneous injections or by seeding with an Flt3L secreting murine melanoma. Flt3L may also be added to bone marrow cultures to produce large numbers of in vitro equivalents of the spleen DC subsets. Total DC, or their subsets, may be further purified using immunofluorescent labeling and flow cytometric cell sorting. Cell sorting may be completely bypassed by separating DC subsets using a combination of fluorescent antibody labeling and anti-fluorochrome magnetic beads. Our procedure enables efficient separation of the distinct DC subsets, even in cases where mouse numbers or flow cytometric cell sorting time is limiting.

21 CFR 74.2104 - D&C Blue No. 4.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Blue No. 4. 74.2104 Section 74.2104 Food and... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2104 D&C Blue No. 4. (a) Identity and specifications. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74...

21 CFR 74.2104 - D&C Blue No. 4.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Blue No. 4. 74.2104 Section 74.2104 Food and... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2104 D&C Blue No. 4. (a) Identity and specifications. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74...

21 CFR 74.2104 - D&C Blue No. 4.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Blue No. 4. 74.2104 Section 74.2104 Food and... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2104 D&C Blue No. 4. (a) Identity and specifications. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74...

21 CFR 74.1336 - D&C Red No. 36.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 36. 74.1336 Section 74.1336 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1336 D&C Red No. 36. (a) Identity. (1) The color additive D&C...

21 CFR 74.1328 - D&C Red No. 28.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 28. 74.1328 Section 74.1328 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1328 D&C Red No. 28. (a) Identity. (1) The color additive D&C...

21 CFR 74.1339 - D&C Red No. 39.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 39. 74.1339 Section 74.1339 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1339 D&C Red No. 39. (a) Identity. (1) The color additive D&C...

21 CFR 74.1327 - D&C Red No. 27.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 27. 74.1327 Section 74.1327 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1327 D&C Red No. 27. (a) Identity. (1) The color additive D&C...

21 CFR 74.1317 - D&C Red No. 17.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 17. 74.1317 Section 74.1317 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1317 D&C Red No. 17. (a) Identity. (1) The color additive D&C...

21 CFR 74.1206 - D&C Green No. 6.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Green No. 6. 74.1206 Section 74.1206 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1206 D&C Green No. 6. (a) Identity. The color additive D&C...

21 CFR 74.1322 - D&C Red No. 22.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 22. 74.1322 Section 74.1322 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1322 D&C Red No. 22. (a) Identity. (1) The color additive D&C...

21 CFR 74.1331 - D&C Red No. 31.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 31. 74.1331 Section 74.1331 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1331 D&C Red No. 31. (a) Identity. (1) The color additive D&C...

21 CFR 74.1321 - D&C Red No. 21.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 21. 74.1321 Section 74.1321 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1321 D&C Red No. 21. (a) Identity. (1) The color additive D&C...

21 CFR 74.1208 - D&C Green No. 8.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Green No. 8. 74.1208 Section 74.1208 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1208 D&C Green No. 8. (a) Identity. (1) The color additive D&C...

21 CFR 74.1205 - D&C Green No. 5.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Green No. 5. 74.1205 Section 74.1205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1205 D&C Green No. 5. (a) Identity. (1) The color additive D&C...

21 CFR 74.1205 - D&C Green No. 5.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Green No. 5. 74.1205 Section 74.1205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1205 D&C Green No. 5. (a) Identity. (1) The color additive D&C...

21 CFR 74.1205 - D&C Green No. 5.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Green No. 5. 74.1205 Section 74.1205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1205 D&C Green No. 5. (a) Identity. (1) The color additive D&C...

21 CFR 74.1261 - D&C Orange No. 11.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 11. 74.1261 Section 74.1261 Food... COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1261 D&C Orange No. 11. (a) Identity. (1) The color additive D&C Orange No. 11 is a mixture consisting principally of the disodium salts of 4′,5...

21 CFR 74.1254 - D&C Orange No. 4.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 4. 74.1254 Section 74.1254 Food and... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1254 D&C Orange No. 4. (a) Identity. (1) the color additive D&C Orange No. 4 is principally the sodium salt of 4-[(2-hydroxy-1-naphthalenyl)azo]benzenesulfonic...

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Orthogonal fluxgate mechanism operated with dc biased excitation

NASA Astrophysics Data System (ADS)

Sasada, I.

2002-05-01

A mode of operation is presented for an orthogonal fluxgate built with a thin magnetic wire. By adding a proper dc bias to the wire excitation, the new mode is easily established. In this case, the fundamental component of the induced voltage at the sensing coil (secondary voltage) is made sensitive to the axial magnetic field, compared to the second harmonic in a conventional orthogonal fluxgate. The operating principle is explained using a magnetization rotation model. A method is proposed to cancel the offset that is inevitable when the magnetic anisotropy is present in a magnetic wire at an angle to its circumference. Experimental results are shown for a sensor head consisting of a 2-cm-long Co-based amorphous wire 120 μm in diameter with a 220-turn sensing coil. The sensitivity obtained is higher than that obtained using a conventional type of the orthogonal fluxgate built with the same sensor head. It is also demonstrated that the proposed method for canceling the offset works well.

MEMS fabrication and frequency sweep for suspending beam and plate electrode in electrostatic capacitor

NASA Astrophysics Data System (ADS)

Zhu, Jianxiong; Song, Weixing

2018-01-01

We report a MEMS fabrication and frequency sweep for a high-order mode suspending beam and plate layer in electrostatic micro-gap semiconductor capacitor. This suspended beam and plate was designed with silicon oxide (SiO2) film which was fabricated using bulk silicon micromachining technology on both side of a silicon substrate. The designed semiconductor capacitors were driven by a bias direct current (DC) and a sweep frequency alternative current (AC) in a room temperature for an electrical response test. Finite element calculating software was used to evaluate the deformation mode around its high-order response frequency. Compared a single capacitor with a high-order response frequency (0.42 MHz) and a 1 × 2 array parallel capacitor, we found that the 1 × 2 array parallel capacitor had a broader high-order response range. And it concluded that a DC bias voltage can be used to modulate a high-order response frequency for both a single and 1 × 2 array parallel capacitors.

Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

NASA Astrophysics Data System (ADS)

Kumar, Rajesh; Gupta, Ajai K.; Kumar, Vijay; Bhalla, G. L.; Khare, Neeraj

2007-12-01

The influence of dc biasing current on temperature dependence of resistance of La0.67Ba0.33MnO3 bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal insulator transition temperature (TMI) and decreases when the temperature is either increased or decreased from TMI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at TMI.

Photoinduced Bulk Polarization and Its Effects on Photovoltaic Actions in Perovskite Solar Cells.

PubMed

Wu, Ting; Collins, Liam; Zhang, Jia; Lin, Pei-Ying; Ahmadi, Mahshid; Jesse, Stephen; Hu, Bin

2017-11-28

This article reports an experimental demonstration of photoinduced bulk polarization in hysteresis-free methylammonium (MA) lead-halide perovskite solar cells [ITO/PEDOT:PSS/perovskite/PCBM/PEI/Ag]. An anomalous capacitance-voltage (CV) signal is observed as a broad "shoulder" in the depletion region from -0.5 to +0.5 V under photoexcitation based on CV measurements where a dc bias is gradually scanned to continuously drift mobile ions in order to detect local polarization under a low alternating bias (50 mV, 5 kHz). Essentially, gradually scanning the dc bias and applying a low alternating bias can separately generate continuously drifting ions and a bulk CV signal from local polarization under photoexcitation. Particularly, when the device efficiency is improved from 12.41% to 18.19% upon chlorine incorporation, this anomalous CV signal can be enhanced by a factor of 3. This anomalous CV signal can be assigned as the signature of photoinduced bulk polarization by distinguishing from surface polarization associated with interfacial charge accumulation. Meanwhile, replacing easy-rotational MA + with difficult-rotational formamidinium (FA + ) cations largely minimizes such anomalous CV signal, suggesting that photoinduced bulk polarization relies on the orientational freedom of dipolar organic cations. Furthermore, a Kelvin probe force microscopy study shows that chlorine incorporation can suppress the density of charged defects and thus enhances photoinduced bulk polarization due to the reduced screening effect from charged defects. A bias-dependent photoluminescence study indicates that increasing bulk polarization can suppress carrier recombination by decreasing charge capture probability through the Coulombic screening effect. Clearly, our studies provide an insightful understanding of photoinduced bulk polarization and its effects on photovoltaic actions in perovskite solar cells.

A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

1998-01-01

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Partition-free theory of time-dependent current correlations in nanojunctions in response to an arbitrary time-dependent bias

NASA Astrophysics Data System (ADS)

Ridley, Michael; MacKinnon, Angus; Kantorovich, Lev

2017-04-01

Working within the nonequilibrium Green's function formalism, a formula for the two-time current correlation function is derived for the case of transport through a nanojunction in response to an arbitrary time-dependent bias. The one-particle Hamiltonian and the wide-band limit approximation are assumed, enabling us to extract all necessary Green's functions and self-energies for the system, extending the analytic work presented previously [Ridley et al., Phys. Rev. B 91, 125433 (2015), 10.1103/PhysRevB.91.125433]. We show that our expression for the two-time correlation function generalizes the Büttiker theory of shot and thermal noise on the current through a nanojunction to the time-dependent bias case including the transient regime following the switch-on. Transient terms in the correlation function arise from an initial state that does not assume (as is usually done) that the system is initially uncoupled, i.e., our approach is partition free. We show that when the bias loses its time dependence, the long-time limit of the current correlation function depends on the time difference only, as in this case an ideal steady state is reached. This enables derivation of known results for the single-frequency power spectrum and for the zero-frequency limit of this power spectrum. In addition, we present a technique which facilitates fast calculations of the transient quantum noise, valid for arbitrary temperature, time, and voltage scales. We apply this formalism to a molecular wire system for both dc and ac biases, and find a signature of the traversal time for electrons crossing the wire in the time-dependent cross-lead current correlations.

21 CFR 74.1208 - D&C Green No. 8.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Green No. 8. 74.1208 Section 74.1208 Food and... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1208 D&C Green No. 8. (a) Identity. (1) The color additive D&C Green No. 8 is principally the trisodium salt of 8-hydroxy-1,3,6-pyrene-trisulfonic acid. (2) Color...

21 CFR 74.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Blue No. 4. 74.1104 Section 74.1104 Food and... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1104 D&C Blue No. 4. (a) Identity. (1) The color additive D&C Blue No. 4 is principally the diammonium salt of ethyl[4-[p[ethyl(m- sulfobenzyl)ami-no]-α-(o...

21 CFR 74.1255 - D&C Orange No. 5.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 5. 74.1255 Section 74.1255 Food and... ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1255 D&C Orange No. 5. (a) Identity. (1) the color additive D&C Orange No. 5 is a mixture consisting principally the sodium salt of 4′,5′-dibromofluorescein (CAS...

21 CFR 74.1260 - D&C Orange No. 10.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 10. 74.1260 Section 74.1260 Food... COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1260 D&C Orange No. 10. (a) Identity. (1) The color additive D&C Orange No. 10 is a mixture consisting principally of 4′,5′-diiodofluorescein, 2′,4′,5...

Giant Permittivity in Epitaxial Ferroelectric Heterostructures

NASA Astrophysics Data System (ADS)

Erbil, A.; Kim, Y.; Gerhardt, R. A.

1996-08-01

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.

Methods to characterize charging effects

NASA Astrophysics Data System (ADS)

Slots, H.

1984-08-01

Methods to characterize charging in insulating material under high voltage dc stress, leading to electrical breakdown, are reviewed. The behavior of the charges can be studied by ac loss angle measurements after application or removal of dc bias. Measurements were performed on oil-paper and oil-Mylar systems. The poor reproducibility of the measurements makes it impossible to draw more than qualitative conclusions about the charging effects. With an ultrasound pressure wave the electric field distribution in a material can be determined. An alternative derivation for the transient response of a system which elucidates the influence of several parameters in a simple way is given.

Plasma characteristics in an electrically asymmetric capacitive discharge sustained by multiple harmonics: operating in the very high frequency regime

NASA Astrophysics Data System (ADS)

Zhang, Yu-Ru; Hu, Yan-Ting; Gao, Fei; Song, Yuan-Hong; Wang, You-Nian

2018-05-01

A novel method, the so-called electrical asymmetry effect (EAE), is gaining increasing interest for realizing the separate control of the ion flux and ion energy. In this paper, a two-dimensional fluid model combined with the full set of Maxwell equations is used to investigate the plasma properties in an electrically asymmetric capacitive discharge sustained by multiple consecutive harmonics operating in the very high frequency regime. The results indicate that by increasing the total number of consecutive harmonics k, the modulation of the dc self-bias induced by changing {θ }1 (the relative phase of the fundamental frequency) becomes different, especially for k ≤slant 6. In a discharge driven by eight consecutive harmonics, the dc self-bias varies with a period 2π, and the most positive value appears at {θ }1 = 3π/2. In addition, with the electromagnetic effects taken into account, the plasma density shifts from edge-high to uniform when {θ }1 increases from 0 to π, and the maximum moves again towards the radial wall at {θ }1 = 3π/2. Moreover, the transient behavior of electrodynamics is also important for a better understanding of the EAE. Within a period, three positive peaks of {P}z are observed, which cause substantial ionization at similar places. {P}r is characterized by a pronounced peak at the end of the period, and the lowest peak value appears at {θ }1 = π. The results obtained in this work are important for improving the plasma processes by utilizing the EAE, especially when the higher order harmonics are included.

Exchange bias effect and glassy-like behavior of EuCrO{sub 3} and CeCrO{sub 3} nano-powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taheri, M., E-mail: maryam.taheri@brocku.ca; Razavi, F. S.; Kremer, R. K.

2015-09-28

The magnetic properties of nano-sized EuCrO{sub 3} and CeCrO{sub 3} powders, synthesized by a solution combustion method, were investigated using DC/AC magnetization measurements. An exchange bias effect, magnetization irreversibility and AC susceptibility dispersion in these samples provided evidence for the presence of the spin disorder magnetic phase. The exchange bias phenomenon, which is assigned to the exchange coupling between the glassy-like shell and canted antiferromagnetic core, showed the opposite sign in EuCrO{sub 3} and CeCrO{sub 3} at low temperatures, suggesting different exchange interactions at the interfaces in these compounds. We also observed a sign reversal of exchange bias in CeCrO{submore » 3} at different temperatures.« less

Hydrogenated nanostructure boron doped amorphous carbon films by DC bias

NASA Astrophysics Data System (ADS)

Ishak, A.; Dayana, K.; Saurdi, I.; Malek, M. F.; Rusop, M.

2018-03-01

Hydrogenated nanostructure-boron doped amorphous carbon thin film carbon was deposited at different negative bias using custom-made deposition bias assisted-CVD. Solid of boron and palm oil were used as dopant and carbon source, respectively. The hydrogenated nanostructure amorphous films were characterized by Field emission scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, while the photo-response studies of thin film is done by I-V measurement under light measurement. The results showed the carbon film were in nanostructure with hydrogen and boron might be incorporated in the film. The Raman spectra observed the increase of upward shift of D and G peaks as negative bias increased which related to the structural change as boron incorporated in carbon network. These structural changes were further correlated with photo-response study and the results obtained are discussed and compared.

The U.S.S. PUEBLO Incident, Warning Cycle.

DTIC Science & Technology

1984-09-10

11. ŕ.8 111a-25 I~U2 MICROCOP RESOUTIO TES CHART II"’D 1 963 A112 111Z’ 𔃻 1 . Defense Intelligence College c I Washington, DC 20301-6111 APPROVAL...North Korean government. Obviously both sources have a definite bias. The bias that the Pueblo crew members may have is compounded by the fact that...Pinnacle II. Therefore, they were 77 • .. mp -p - extremely confused as to what was happening. CX’ This was compounded by the fact that there was no -i

Optimization of process parameters in the RF-DC plasma N2-H2 for AISI420 molds and dies

NASA Astrophysics Data System (ADS)

Herdianto, Hengky; Djoko, D. J.; Santjojo, H.; Masruroh

2017-11-01

The RF-DC plasma N2-H2 was used to make precise AISI420 molds and dies have complex textured geometry. The quality of the molds and dies directly affect the quality of the produced parts. The excellent examples of molds were used for injection molding lenses and dies used for the precision forging of automotive drive train components. In this study, a temperature, DC bias, and duration as process parameters of the RF-DC plasma N2-H2 have been optimized for molds and dies fabrication. The mask-less micro-patterned method was utilized to draw the initial 2D micro patterns directly onto the AISI420 substrate surface. The unprinted substrate surfaces were selectively nitrided by the RF-DC plasma N2-H2 at 673 K for 5400 s by 70 Pa with hollow cathode device. Energy Dispersive X-ray was utilized to describe the nitrogen content distribution at the vicinity of the border between the unprinted surfaces. This exclusive nitrogen mapping proves that only the unprinted parts of the substrate have high content nitrogen solutes. XRD analysis was performed to investigate whether the iron nitrides were precipitated by RF-DC plasma N2-H2 in the AISI420.

Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

NASA Astrophysics Data System (ADS)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

ELECTRONIC PHASE CONTROL CIRCUIT

DOEpatents

Salisbury, J.D.; Klein, W.W.; Hansen, C.F.

1959-04-21

An electronic circuit is described for controlling the phase of radio frequency energy applied to a multicavity linear accelerator. In one application of the circuit two cavities are excited from a single radio frequency source, with one cavity directly coupled to the source and the other cavity coupled through a delay line of special construction. A phase detector provides a bipolar d-c output signal proportional to the difference in phase between the voltage in the two cavities. This d-c signal controls a bias supply which provides a d-c output for varying the capacitnce of voltage sensitive capacitors in the delay line. The over-all operation of the circuit is completely electronic, overcoming the time response limitations of the electromechanical control systems, and the relative phase relationship of the radio frequency voltages in the two caviiies is continuously controlled to effect particle acceleration.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

77 FR 39921 - D&C Red No. 6 and D&C Red No. 7; Change in Specification

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-06

..., OH 45232, had filed a color additive petition (CAP 1C0290) requesting that FDA amend its regulations....2306 and 74.2307. Both color additives are required to be batch certified by FDA before they may... D&C Red Nos. 6 and 7 contained ether-soluble matter for which the proponents of the color additives...

Radiation detector spectrum simulator

DOEpatents

Wolf, Michael A.; Crowell, John M.

1987-01-01

A small battery operated nuclear spectrum simulator having a noise source nerates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith generates several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

Radiation detector spectrum simulator

DOEpatents

Wolf, M.A.; Crowell, J.M.

1985-04-09

A small battery operated nuclear spectrum simulator having a noise source generates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith to generate several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

The Model Analyst’s Toolkit: Scientific Model Development, Analysis, and Validation

DTIC Science & Technology

2015-05-20

biased for a variety of reasons, and neurological and physiological data can be corrupted by broken or improperly used sensors. If it were possible...War and Development Policy. Washington, DC: World Bank and Oxford University Press. Collier, P. and Hoeffler, A. (2004). " Greed and Grievances in

Measuring surfactant concentration in plating solutions

DOEpatents

Bonivert, William D.; Farmer, Joseph C.; Hachman, John T.

1989-01-01

An arrangement for measuring the concentration of surfactants in a electrolyte containing metal ions includes applying a DC bias voltage and a modulated voltage to a counter electrode. The phase angle between the modulated voltage and the current response to the modulated voltage at a working electrode is correlated to the surfactant concentration.

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {>=}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {>=}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {ge}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {ge}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

21 CFR 74.2711 - D&C Yellow No. 11.

Code of Federal Regulations, 2010 CFR

2010-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2711 D&C Yellow No. 11. (a) Identity and specifications. The color additive D&C Yellow No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2328 - D&C Red No. 28.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2328 D&C Red No. 28. (a) Identity and specifications. The color additive D&C Red No. 28 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2260 - D&C Orange No. 10.

Code of Federal Regulations, 2010 CFR

2010-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2260 D&C Orange No. 10. (a) Identity and specifications. The color additive D&C Orange No. 10 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2206 - D&C Green No. 6.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2206 D&C Green No. 6. (a) Identity and specifications. The color additive D&C Green No. 6 shall conform in identity and specifications to the requirements of § 74... applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling requirements. The...

21 CFR 74.2261 - D&C Orange No. 11.

Code of Federal Regulations, 2010 CFR

2010-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2261 D&C Orange No. 11. (a) Identity and specifications. The color additive D&C Orange No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2330 - D&C Red No. 30.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2330 D&C Red No. 30. (a) Identity and specifications. The color additive D&C Red No. 30 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2254 - D&C Orange No. 4.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2254 D&C Orange No. 4. (a) Identity and specifications. The color additive D&C Orange No. 4 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2708 - D&C Yellow No. 8.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2708 D&C Yellow No. 8. (a) Identity and specifications. The color additive D&C Yellow No. 8 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2707 - D&C Yellow No. 7.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707 D&C Yellow No. 7. (a) Identity and specifications. The color additive D&C Yellow No. 7 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2327 - D&C Red No. 27.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2327 D&C Red No. 27. (a) Identity and specifications. The color additive D&C Red No. 27 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2254 - D&C Orange No. 4.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2254 D&C Orange No. 4. (a) Identity and specifications. The color additive D&C Orange No. 4 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2206 - D&C Green No. 6.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2206 D&C Green No. 6. (a) Identity and specifications. The color additive D&C Green No. 6 shall conform in identity and specifications to the requirements of § 74... applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling requirements. The...

21 CFR 74.2707 - D&C Yellow No. 7.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707 D&C Yellow No. 7. (a) Identity and specifications. The color additive D&C Yellow No. 7 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2707 - D&C Yellow No. 7.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707 D&C Yellow No. 7. (a) Identity and specifications. The color additive D&C Yellow No. 7 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2260 - D&C Orange No. 10.

Code of Federal Regulations, 2013 CFR

2013-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2260 D&C Orange No. 10. (a) Identity and specifications. The color additive D&C Orange No. 10 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2711 - D&C Yellow No. 11.

Code of Federal Regulations, 2013 CFR

2013-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2711 D&C Yellow No. 11. (a) Identity and specifications. The color additive D&C Yellow No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2260 - D&C Orange No. 10.

Code of Federal Regulations, 2012 CFR

2012-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2260 D&C Orange No. 10. (a) Identity and specifications. The color additive D&C Orange No. 10 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2328 - D&C Red No. 28.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2328 D&C Red No. 28. (a) Identity and specifications. The color additive D&C Red No. 28 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2711 - D&C Yellow No. 11.

Code of Federal Regulations, 2011 CFR

2011-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2711 D&C Yellow No. 11. (a) Identity and specifications. The color additive D&C Yellow No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2708 - D&C Yellow No. 8.

Code of Federal Regulations, 2011 CFR

2011-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2708 D&C Yellow No. 8. (a) Identity and specifications. The color additive D&C Yellow No. 8 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2707 - D&C Yellow No. 7.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707 D&C Yellow No. 7. (a) Identity and specifications. The color additive D&C Yellow No. 7 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2261 - D&C Orange No. 11.

Code of Federal Regulations, 2014 CFR

2014-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2261 D&C Orange No. 11. (a) Identity and specifications. The color additive D&C Orange No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2708 - D&C Yellow No. 8.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2708 D&C Yellow No. 8. (a) Identity and specifications. The color additive D&C Yellow No. 8 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2206 - D&C Green No. 6.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2206 D&C Green No. 6. (a) Identity and specifications. The color additive D&C Green No. 6 shall conform in identity and specifications to the requirements of § 74... applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling requirements. The...

21 CFR 74.2261 - D&C Orange No. 11.

Code of Federal Regulations, 2013 CFR

2013-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2261 D&C Orange No. 11. (a) Identity and specifications. The color additive D&C Orange No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2328 - D&C Red No. 28.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2328 D&C Red No. 28. (a) Identity and specifications. The color additive D&C Red No. 28 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2330 - D&C Red No. 30.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2330 D&C Red No. 30. (a) Identity and specifications. The color additive D&C Red No. 30 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2330 - D&C Red No. 30.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2330 D&C Red No. 30. (a) Identity and specifications. The color additive D&C Red No. 30 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2327 - D&C Red No. 27.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2327 D&C Red No. 27. (a) Identity and specifications. The color additive D&C Red No. 27 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2206 - D&C Green No. 6.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2206 D&C Green No. 6. (a) Identity and specifications. The color additive D&C Green No. 6 shall conform in identity and specifications to the requirements of § 74... applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling requirements. The...

21 CFR 74.2708 - D&C Yellow No. 8.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2708 D&C Yellow No. 8. (a) Identity and specifications. The color additive D&C Yellow No. 8 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2330 - D&C Red No. 30.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2330 D&C Red No. 30. (a) Identity and specifications. The color additive D&C Red No. 30 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2254 - D&C Orange No. 4.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2254 D&C Orange No. 4. (a) Identity and specifications. The color additive D&C Orange No. 4 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2327 - D&C Red No. 27.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2327 D&C Red No. 27. (a) Identity and specifications. The color additive D&C Red No. 27 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2327 - D&C Red No. 27.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2327 D&C Red No. 27. (a) Identity and specifications. The color additive D&C Red No. 27 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2260 - D&C Orange No. 10.

Code of Federal Regulations, 2014 CFR

2014-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2260 D&C Orange No. 10. (a) Identity and specifications. The color additive D&C Orange No. 10 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2711 - D&C Yellow No. 11.

Code of Federal Regulations, 2012 CFR

2012-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2711 D&C Yellow No. 11. (a) Identity and specifications. The color additive D&C Yellow No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2261 - D&C Orange No. 11.

Code of Federal Regulations, 2012 CFR

2012-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2261 D&C Orange No. 11. (a) Identity and specifications. The color additive D&C Orange No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2254 - D&C Orange No. 4.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2254 D&C Orange No. 4. (a) Identity and specifications. The color additive D&C Orange No. 4 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2328 - D&C Red No. 28.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2328 D&C Red No. 28. (a) Identity and specifications. The color additive D&C Red No. 28 shall conform in identity and specifications to the requirements of § 74... cosmetics generally in amounts consistent with current good manufacturing practice. (c) Labeling...

21 CFR 74.2708 - D&C Yellow No. 8.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2708 D&C Yellow No. 8. (a) Identity and specifications. The color additive D&C Yellow No. 8 shall conform in identity and specifications to the requirements... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

21 CFR 74.2711 - D&C Yellow No. 11.

Code of Federal Regulations, 2014 CFR

2014-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2711 D&C Yellow No. 11. (a) Identity and specifications. The color additive D&C Yellow No. 11 shall conform in identity and specifications to the... coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling...

Neutron detection using the superconducting Nb-based current-biased kinetic inductance detector

NASA Astrophysics Data System (ADS)

Shishido, Hiroaki; Yamaguchi, Hiroyuki; Miki, Yuya; Miyajima, Shigeyuki; Oikawa, Kenichi; Harada, Masahide; Hidaka, Mutsuo; Oku, Takayuki; Arai, Masatoshi; Fujimaki, Akira; Ishida, Takekazu

2017-09-01

We demonstrate neutron detection using a solid-state 3He-free superconducting current-biased kinetic inductance detector (CB-KID), which consists of a superconducting Nb meander line and 10B neutron absorption layer. The CB-KID is based on the transient process of kinetic inductance of Cooper pairs induced by the nuclear reaction between 10B and neutrons. Therefore, the CB-KID can be operated in a wide superconducting region in the bias current-temperature diagram, as demonstrated in this paper. The transient change of the kinetic inductance induces the electromagnetic wave pulse under a DC bias current. The signal propagates along the meander line toward both sides with opposite polarity, where the signal polarity is dominated by the bias current direction. The full width at half maximum of the signals remains on the order of a few tens of ns, which confirms the high-speed operation of our detectors. We determine the neutron incident position within 1.3 mm accuracy in one dimension using the multichannel CB-KIDs.

21 CFR 74.2317 - D&C Red No. 17.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2317 D&C Red No. 17. (a) Identity and specifications. The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2331 - D&C Red No. 31.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2331 D&C Red No. 31. (a) Identity and specifications. The color additive D&C Red No. 31 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2707a - Ext. D&C Yellow No. 7.

Code of Federal Regulations, 2010 CFR

2010-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707a Ext. D&C Yellow No. 7. (a) Identity and specifications. The color additive Ext. D&C Yellow No. 7 shall conform in identity and specifications to the... for coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c...

21 CFR 74.2334 - D&C Red No. 34.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2334 D&C Red No. 34. (a) Identity and specifications. The color additive D&C Red No. 34 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2104 - D&C Blue No. 4.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2104 D&C Blue No. 4. (a) Identity and specifications. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2317 - D&C Red No. 17.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2317 D&C Red No. 17. (a) Identity and specifications. The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2707a - Ext. D&C Yellow No. 7.

Code of Federal Regulations, 2012 CFR

2012-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707a Ext. D&C Yellow No. 7. (a) Identity and specifications. The color additive Ext. D&C Yellow No. 7 shall conform in identity and specifications to the... for coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c...

21 CFR 74.2334 - D&C Red No. 34.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2334 D&C Red No. 34. (a) Identity and specifications. The color additive D&C Red No. 34 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2317 - D&C Red No. 17.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2317 D&C Red No. 17. (a) Identity and specifications. The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2334 - D&C Red No. 34.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2334 D&C Red No. 34. (a) Identity and specifications. The color additive D&C Red No. 34 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2707a - Ext. D&C Yellow No. 7.

Code of Federal Regulations, 2014 CFR

2014-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707a Ext. D&C Yellow No. 7. (a) Identity and specifications. The color additive Ext. D&C Yellow No. 7 shall conform in identity and specifications to the... for coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c...

21 CFR 74.2331 - D&C Red No. 31.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2331 D&C Red No. 31. (a) Identity and specifications. The color additive D&C Red No. 31 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2331 - D&C Red No. 31.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2331 D&C Red No. 31. (a) Identity and specifications. The color additive D&C Red No. 31 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2331 - D&C Red No. 31.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2331 D&C Red No. 31. (a) Identity and specifications. The color additive D&C Red No. 31 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2317 - D&C Red No. 17.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2317 D&C Red No. 17. (a) Identity and specifications. The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

21 CFR 74.2707a - Ext. D&C Yellow No. 7.

Code of Federal Regulations, 2013 CFR

2013-04-01

... COLOR ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2707a Ext. D&C Yellow No. 7. (a) Identity and specifications. The color additive Ext. D&C Yellow No. 7 shall conform in identity and specifications to the... for coloring externally applied cosmetics in amounts consistent with good manufacturing practice. (c...

21 CFR 74.2334 - D&C Red No. 34.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIVES SUBJECT TO CERTIFICATION Cosmetics § 74.2334 D&C Red No. 34. (a) Identity and specifications. The color additive D&C Red No. 34 shall conform in identity and specifications to the requirements of § 74... externally applied cosmetics in amounts consistent with good manufacturing practice. (c) Labeling. The label...

Active terahertz metamaterials based on liquid-crystal induced transparency and absorption

NASA Astrophysics Data System (ADS)

Yang, Lei; Fan, Fei; Chen, Meng; Zhang, Xuanzhou; Chang, Sheng-Jiang

2017-01-01

An active terahertz (THz) liquid crystal (LC) metamaterial has been experimentally investigated for THz wave modulation. Some interesting phenomena of resonance shifting, tunable electromagnetically induced transparency (EIT) and electromagnetically induced absorption (EIA) have been observed in the same device structure under different DC bias directions and different incident wave polarization directions by the THz time domain spectroscopy. Further theoretical studies indicate that these effects originate from interference and coupling between bright and dark mode components of elliptically polarized modes in the LC metamaterial, which are induced by the optical activity of LC alignment controllable by the electric field as well as the changes of LC refractive index. The LC layer is indeed a phase retarder and polarization converter that is controlled by the DC bias. The THz modulation depth of the analogs of EIT and EIA effects are 18.3 dB and 10.5 dB in their frequency band, respectively. Electrical control, large modulation depth and feasible integration of this LC device make it an ideal candidate for THz tunable filter, intensity modulator and spatial light modulator.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

A molecular dynamics simulation study on trapping ions in a nanoscale Paul trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiongce; Krstic, Predrag S

2008-01-01

We found by molecular dynamics simulations that a low energy ion can be trapped effectively in a nanoscale Paul trap in both vacuum and in aqueous environment when appropriate AC/DC electric fields are applied to the system. Using the negatively charged chlorine ion as an example, we show that the trapped ion oscillates around the center of the nanotrap with the amplitude dependent on the parameters of the system and applied voltage. Successful trapping of the ion within nanoseconds requires electric bias of GHz frequency, in the range of hundreds of mV. The oscillations are damped in the aqueous environment,more » but polarization of the water molecules requires application of the higher voltage biases to reach the improved stability of the trapping. Application of a supplemental DC driving field along the trap axis can effectively drive the ion off the trap center and out of the trap, opening a possibility of studying DNA and other biological molecules using embedded probes while achieving a full control of their translocation and localization in the trap.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calabrese, G.; Capineri, L., E-mail: lorenzo.capineri@unifi.it; Granato, M.

This paper describes the design of a system for the characterization of magnetic hysteresis behavior in soft ferrite magnetic cores. The proposed setup can test magnetic materials exciting them with controlled arbitrary magnetic field waveforms, including the capability of providing a DC bias, in a frequency bandwidth up to 500 kHz, with voltages up to 32 V peak-to-peak, and currents up to 10 A peak-to-peak. In order to have an accurate control of the magnetic field waveform, the system is based on a voltage controlled current source. The electronic design is described focusing on closed loop feedback stabilization and passivemore » components choice. The system has real-time hysteretic loop acquisition and visualization. The comparisons between measured hysteresis loops of sample magnetic materials and datasheet available ones are shown. Results showing frequency and thermal behavior of the hysteresis of a test sample prove the system capabilities. Moreover, the B-H loops obtained with a multiple waveforms excitation signal, including DC bias, are reported. The proposal is a low-cost and replicable solution for hysteresis characterization of magnetic materials used in power electronics.« less

A simplified filterless photonic frequency octupling scheme based on cascaded modulators

NASA Astrophysics Data System (ADS)

Zhang, Wu; Wen, Aijun; Gao, Yongsheng; Zheng, Hanxiao; Chen, Wei; He, Hongye

2017-04-01

A simplified filterless frequency octupling scheme by connecting an intensity modulator (IM) with a dual-parallel Mach-Zehnder (DPMZM) in series is proposed in this paper. The LO signal is distributed into two parts, and one part is used to drive the IM and the other part is applied to drive the DPMZM's upper sub-modulator, both at the peak point. The lower sub-modulator is only driven by dc bias, and the parent modulator works at null point. By properly adjusting dc bias of the lower sub-modulator, only ±4th-order optical sidebands dominate at the output of the DPMZM. The approach is verified by experiments, and 32-GHz and 40-GHz millimetre waves (mm-waves) are generated using 4-GHz and 5-GHz LO signals, respectively. We acquire a 15-dB electrical spurious suppression ratio (ESSR) and a relatively good phase noise of the signal. Compared with other schemes, the scheme is simple in configuration because only an IM and a DPMZM are needed. What's more, the scheme is tunable in frequency as no filter is used.

Stamp transferred suspended graphene mechanical resonators for radio frequency electrical readout.

PubMed

Song, Xuefeng; Oksanen, Mika; Sillanpää, Mika A; Craighead, H G; Parpia, J M; Hakonen, Pertti J

2012-01-11

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f = 5-6 GHz producing modulation sidebands at f ± f(m). A mechanical resonance frequency up to f(m) = 178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of dc bias voltage V(dc) indicates that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large V(dc). © 2011 American Chemical Society

The role and mechanics of dendritic cells in tumor antigen acquisition and presentation following laser immunotherapy

NASA Astrophysics Data System (ADS)

Laverty, Sean M.; Dawkins, Bryan A.; Chen, Wei R.

2018-02-01

We extend our model of the antitumor immune response initiated by laser-immunotherapy treatment to more closely examine key steps in the immune response 1) tumor antigen acquisition by antigen-presenting dendritic cells (DCs) and 2) cytotoxic T cell (CTL) priming by lymphatic DCs. Specifically we explore the formation of DC-CTL complexes that lead to CTL priming. We find that the bias in the dissociation rate of the complex influences the outcome of treatment. In particular, a bias towards priming favors a rapid activated CTL response and the clearance of tumors.

Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.

Optical impedance spectroscopy with single-mode electro-active-integrated optical waveguides.

PubMed

Han, Xue; Mendes, Sergio B

2014-02-04

An optical impedance spectroscopy (OIS) technique based on a single-mode electro-active-integrated optical waveguide (EA-IOW) was developed to investigate electron-transfer processes of redox adsorbates. A highly sensitive single-mode EA-IOW device was used to optically follow the time-dependent faradaic current originated from a submonolayer of cytochrome c undergoing redox exchanges driven by a harmonic modulation of the electric potential at several dc bias potentials and at several frequencies. To properly retrieve the faradaic current density from the ac-modulated optical signal, we introduce here a mathematical formalism that (i) accounts for intrinsic changes that invariably occur in the optical baseline of the EA-IOW device during potential modulation and (ii) provides accurate results for the electro-chemical parameters. We are able to optically reconstruct the faradaic current density profile against the dc bias potential in the working electrode, identify the formal potential, and determine the energy-width of the electron-transfer process. In addition, by combining the optically reconstructed faradaic signal with simple electrical measurements of impedance across the whole electrochemical cell and the capacitance of the electric double-layer, we are able to determine the time-constant connected to the redox reaction of the adsorbed protein assembly. For cytochrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction rate constant of 26.5 s(-1). Finally, we calculate the charge-transfer resistance and pseudocapacitance associated with the electron-transfer process and show that the frequency dependence of the redox reaction of the protein submonolayer follows as expected the electrical equivalent of an RC-series admittance diagram. Above all, we show here that OIS with single-mode EA-IOW's provide strong analytical signals that can be readily monitored even for small surface-densities of species involved in the redox process (e.g., fmol/cm(2), 0.1% of a full protein monolayer). This experimental approach, when combined with the analytical formalism described here, brings additional sensitivity, accuracy, and simplicity to electro-chemical analysis and is expected to become a useful tool in investigations of redox processes.

21 CFR 74.1711 - D&C Yellow No. 11.

Code of Federal Regulations, 2010 CFR

2010-04-01

... listed in part 73 of this chapter as safe for use in color additive mixtures for coloring externally... part per million. Total color, not less than 96 percent. (c) Uses and restrictions. D&C Yellow No. 11... COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1711 D&C Yellow No. 11. (a) Identity. (1) The color...

21 CFR 74.1339 - D&C Red No. 39.

Code of Federal Regulations, 2010 CFR

2010-04-01

... As), not more than 3 parts per million. Total color, not less than 95.0 percent. (c) Uses and... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1339 D&C Red No. 39. (a) Identity. (1) The color additive D&C...

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Strategies on solar observation of Atacama Large Millimeter/submillimeter Array (ALMA) band-1 receiver

NASA Astrophysics Data System (ADS)

Chiong, Chau-Ching; Chiang, Po-Han; Hwang, Yuh-Jing; Huang, Yau-De

2016-07-01

ALMA covering 35-950 GHz is the largest existing telescope array in the world. Among the 10 receiver bands, Band-1, which covers 35-50 GHz, is the lowest. Due to its small dimension and its time-variant frequency-dependent gain characteristics, current solar filter located above the cryostat cannot be applied to Band-1 for solar observation. Here we thus adopt new strategies to fulfill the goals. Thanks to the flexible dc biasing scheme of the HEMT-based amplifier in Band-1 front-end, bias adjustment of the cryogenic low noise amplifier is investigated to accomplish solar observation without using solar filter. Large power handling range can be achieved by the de-tuning bias technique with little degradation in system performance.

Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

NASA Astrophysics Data System (ADS)

Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

2018-04-01

Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

21 CFR 74.1602 - D&C Violet No. 2.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Violet No. 2. 74.1602 Section 74.1602 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1602 D&C Violet No. 2. (a) Identity. (1) The color additive D...

21 CFR 74.1254 - D&C Orange No. 4.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Orange No. 4. 74.1254 Section 74.1254 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1254 D&C Orange No. 4. (a) Identity. (1) the color additive D...

21 CFR 74.1255 - D&C Orange No. 5.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Orange No. 5. 74.1255 Section 74.1255 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1255 D&C Orange No. 5. (a) Identity. (1) the color additive D...

Ozone production by a dc corona discharge in air contaminated by n-heptane

NASA Astrophysics Data System (ADS)

Pekárek, S.

2008-01-01

Beneficial purposes of ozone such as elimination of odours, harmful bacteria and mildew can be used for transportation of food, fruits and vegetables with the aim to extend their storage life. To date the main technique used for this purpose in the transportation of these commodities, e.g. by trucks, was cooling. Here a combination of cooling together with the supply of ozone into containers with these commodities is considered. For these purposes we studied the effect of air contamination by n-heptane (part of automotive fuels) and humidity on ozone production by a dc hollow needle to mesh corona discharge. We found that, for both polarities of the needle electrode, addition of n-heptane to air (a) decreases ozone production; (b) causes discharge poisoning to occur at lower current than for air; (c) does not substantially influence the current for which the ozone production reaches the maximum. Finally the maximum ozone production for the discharge in air occurs for the same current as the maximum ozone production for the discharge contaminated by n-heptane. We also found that humidity decreases ozone production from air contaminated by n-heptane irrespective of the polarity of the coronating needle electrode. This dependence is stronger for the discharge with the needle biased positively.

Dual-Electrode CMUT With Non-Uniform Membranes for High Electromechanical Coupling Coefficient and High Bandwidth Operation

PubMed Central

Guldiken, Rasim O.; Zahorian, Jaime; Yamaner, F. Y.; Degertekin, F. L.

2010-01-01

In this paper, we report measurement results on dual-electrode CMUT demonstrating electromechanical coupling coefficient (k2) of 0.82 at 90% of collapse voltage as well as 136% 3 dB one-way fractional bandwidth at the transducer surface around the design frequency of 8 MHz. These results are within 5% of the predictions of the finite element simulations. The large bandwidth is achieved mainly by utilizing a non-uniform membrane, introducing center mass to the design, whereas the dual-electrode structure provides high coupling coefficient in a large dc bias range without collapsing the membrane. In addition, the non-uniform membrane structure improves the transmit sensitivity of the dual-electrode CMUT by about 2dB as compared with a dual electrode CMUT with uniform membrane. PMID:19574135

A study of electrostatic spring softening for dual-axis micromirror

NASA Astrophysics Data System (ADS)

Zhao, Yi; E H Tay, Francis; Zhou, Guangya; Siong Chau, Fook

2006-08-01

Electrostatic spring softening is an important characteristic of electrostatically actuated dual-axis micromirror, since it lowers the resonant frequencies. This paper presents an approach based on approximating the electrostatic forces by the first-order Taylor's series expansion to investigate this characteristic. The dual-axis micromirror studied in this paper has three motion modes, two torsional (about x- and y-axis, respectively) and one translational (about z-axis). The stiffnesses of all these modes are softened by a DC bias voltage applied to the mirror plate. The resonant frequencies are lowered with the increment of the bias voltage. The relationship of the bias voltage and the resonant frequencies of all the motion modes is derived. The analytical results show that the resonant frequency curves are affected by the capacitor geometries, i.e. the gap between the mirror plate and the electrodes and the electrodes size. The lowering curves drop slowly when the bias voltage is small. While for large bias voltage, the lowering curves drop rapidly. The experiment results are consistent with those obtained by the analytical approach.

Decoy receptor 3: an endogenous immunomodulator in cancer growth and inflammatory reactions.

PubMed

Hsieh, Shie-Liang; Lin, Wan-Wan

2017-06-19

Decoy receptor 3 (DcR3), also known as tumor necrosis factor receptor (TNFR) superfamily member 6b (TNFRSF6B), is a soluble decoy receptor which can neutralize the biological functions of three members of tumor necrosis factor superfamily (TNFSF): Fas ligand (FasL), LIGHT, and TL1A. In addition to 'decoy' function, recombinant DcR3.Fc is able to modulate the activation and differentiation of dendritic cells (DCs) and macrophages via 'non-decoy' action. DcR3-treated DCs skew T cell differentiation into Th2 phenotype, while DcR3-treated macrophages behave M2 phenotype. DcR3 is upregulated in various cancer cells and several inflammatory tissues, and is regarded as a potential biomarker to predict inflammatory disease progression and cancer metastasis. However, whether DcR3 is a pathogenic factor or a suppressor to attenuate inflammatory reactions, has not been discussed comprehensively yet. Because mouse genome does not have DcR3, it is not feasible to investigate its physiological functions by gene-knockout approach. However, DcR3-mediated effects in vitro are determined via overexpressing DcR3 or addition of recombinant DcR3.Fc fusion protein. Moreover, CD68-driven DcR3 transgenic mice are used to investigate DcR3-mediated systemic effects in vivo. Upregulation of DcR3 during inflammatory reactions exerts negative-feedback to suppress inflammation, while tumor cells hijack DcR3 to prevent apoptosis and promote tumor growth and invasion. Thus, 'switch-on' of DcR3 expression may be feasible for the treatment of inflammatory diseases and enhance tissue repairing, while 'switch-off' of DcR3 expression can enhance tumor apoptosis and suppress tumor growth in vivo.

Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Dong-Suk; Moon, Yeon-Keon; Lee, Sih; Kim, Kyung-Taek; Moon, Dae-Yong; Lee, Sang-Ho; Kim, Woong-Sun; Park, Jong-Wan

2012-09-01

In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100°C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage ( V ON) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs.

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Omveer, E-mail: poonia.omveer@gmail.com; Dahiya, Raj P.; Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely themore » crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.« less

Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

NASA Astrophysics Data System (ADS)

Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

2015-03-01

Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.

States higher in racial bias spend less on disabled medicaid enrollees.

PubMed

Leitner, Jordan B; Hehman, Eric; Snowden, Lonnie R

2018-02-07

While there is considerable state-by-state variation in Medicaid disability expenditure, little is known about the factors that contribution to this variation. Since Blacks disproportionately benefit from Medicaid disability programs, we aimed to gain insight into whether racial bias towards Blacks is one factor that explains state-by-state variation in Medicaid disability expenditures. We compiled 1,764,927 responses of explicit and implicit racial bias from all 50 states and Washington D.C. to generate estimates of racial bias for each state (or territory). We then used these estimates to predict states' expenditure per disabled Medicaid enrollee. We also examined whether the relationship between racial bias and disabled Medicaid enrollee expenditure might vary according to states' level of income for Whites, income for Blacks, or conservatism. States with more explicit or implicit racial bias spent less per disabled Medicaid enrollee. This correlation was strongest in states where Whites had lower income, Blacks had higher income, or conservatism was high. Accordingly, these results suggest that racial bias might play a role in Medicaid disability expenditure in places where Whites have a lower economic advantage or there is a culture of conservatism. This research established correlations between state-level racial bias and Medicaid disability expenditure. Future research might build upon this work to understand the direction of causality and pathways that might explain these correlations. Copyright © 2018 Elsevier Ltd. All rights reserved.

Toxoplasma gondii Antigen-Pulsed-Dendritic Cell-Derived Exosomes Induce a Protective Immune Response against T. gondii Infection

PubMed Central

Aline, Fleur; Bout, Daniel; Amigorena, Sébastian; Roingeard, Philippe; Dimier-Poisson, Isabelle

2004-01-01

It was previously demonstrated that immunizing mice with spleen dendritic cells (DCs) that had been pulsed ex vivo with Toxoplasma gondii antigens triggers a systemic Th1-biased specific immune response and induces protection against infection. T. gondii can cause severe sequelae in the fetuses of mothers who acquire the infection during pregnancy, as well as life-threatening neuropathy in immunocompromised patients, in particular those with AIDS. Here, we investigate the efficacy of a novel cell-free vaccine composed of DC exosomes, which are secreted antigen-presenting vesicles that express functional major histocompatibility complex class I and II and T-cell-costimulatory molecules. They have already been shown to induce potent antitumor immune responses. We investigated the potential of DC2.4 cell line-derived exosomes to induce protective immunity against toxoplasmosis. Our data show that most adoptively transferred T. gondii-pulsed DC-derived exosomes were transferred to the spleen, elicited a strong systemic Th1-modulated Toxoplasma-specific immune response in vivo, and conferred good protection against infection. These findings support the possibility that DC-derived exosomes can be used for T. gondii immunoprophylaxis and for immunoprophylaxis against many other pathogens. PMID:15213158

A two-stage monolithic buffer amplifier for 20 GHz satellite communication

NASA Technical Reports Server (NTRS)

Petersen, W. C.; Gupta, A. K.

1983-01-01

Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

PubMed

Yang, Jong-Ryul; Han, Seong-Tae; Baek, Donghyun

2017-09-09

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

PubMed Central

Han, Seong-Tae; Baek, Donghyun

2017-01-01

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. PMID:28891927

Acute virus control mediated by licensed NK cells sets primary CD8+ T cell dependence on CD27 costimulation1,2,3

PubMed Central

Teoh, Jeffrey J.; Gamache, Awndre E.; Gillespie, Alyssa L.; Stadnisky, Michael D.; Yagita, Hideo; Bullock, Timothy N.J.; Brown, Michael G.

2016-01-01

Natural killer (NK) cells represent a critical first-line of immune defense against a bevy of viral pathogens, and infection can provoke them to mediate both supportive and suppressive effects on virus-specific adaptive immunity. In mice expressing MHC I Dk, a major MCMV resistance factor and self-ligand of the inhibitory Ly49G2 (G2) receptor, licensed G2+ NK cells provide essential host resistance against murine (M)CMV infection. Additionally G2+ NK cell responses to MCMV increase the rate and extent of dendritic cell (DC) recovery, as well as early priming of CD8+ T-cell effectors in response to MCMV. However, relatively little is known about the NK-cell effect on co-stimulatory ligand patterns displayed by DCs, or ensuing effector and memory T-cell responses. Here we found that CD27-dependent CD8+ T-cell priming and differentiation is shaped by the efficiency of NK responses to virus infection. Surprisingly, differences in specific NK responses to MCMV in Dk-disparate mice failed to distinguish early DC co-stimulatory patterns. Nonetheless, while CD27 deficiency did not impede licensed NK-mediated resistance, both CD70 and CD27 were required to efficiently prime and regulate effector CD8+ T-cell differentiation in response to MCMV, which eventually resulted in biased memory T-cell precursor formation in Dk mice. In contrast, CD8+ T-cells accrued more slowly in non-Dk mice, and eventually differentiated into terminal effector cells regardless of CD27 stimulation. Disparity in this requirement for CD27 signaling indicates that specific virus control mediated by NK cells can shape DC co-stimulatory signals needed to prime CD8+ T cells and eventual T-cell fate decisions. PMID:27798162

Application of multi-constituent satellite data assimilation for KORUS-AQ

NASA Astrophysics Data System (ADS)

Miyazaki, K.; Sekiya, T.; Fu, D.; Bowman, K. W.; Kulawik, S. S.; Walker, T.; Takigawa, M.; Ogochi, K.; Gaubert, B.; Barré, J.; Emmons, L. K.

2017-12-01

Comprehensive tropospheric maps of multi-constituent fields at 1.1 degree resolution, provided by an assimilation of multiple satellite measurements of O3, CO, NO2, and HNO3 from multiple satellite (OMI, GOME-2, MOPITT, MLS, and AIRS) using an ensemble Kalman filter, are used to study variations in tropospheric composition over east Asia during KORUS-AQ. Assimilated model results for both direct ozone assimilations and assimilations of ozone precursors (NOx and CO) were compared to DC-8 aircraft observations, with significant improvements in model/aircraft comparisons for ozone (the negative model bias was reduced by up to 80 %), CO (by up to 90 %), OH (by up to 40 %), and NOx seen in both approaches. Corrections made to the precursor emissions (i.e., surface NOx and CO emissions), especially over eastern and central China and over South Korea, were important in reducing the negative bias of O3 and CO over South Korea. We obtained additional bias reductions from assimilation of multispectral retrievals of tropospheric ozone profiles from AIRS and OMI, especially for the middle troposphere ozone. Improved agreements with the ground-based measurements at remote sites over South Korea and western Japan suggest that the representation of long-range transport of polluted air is improved by data assimilation, as a result of the optimization of precursor emissions, mainly over China. The higher estimated NOx, by 60-90 % over South Korea and by 20-40 % over eastern China compared to bottom-up inventories, suggests an important underestimation of anthropogenic sources in the emission inventories in these areas. Additional bias reductions were obtained by assimilating the multispectral retrievals, especially for the middle troposphere O3. In the future, assimilating datasets from a new constellation of low Earth orbiting sounders (e.g., IASI, AIRS, CrIS, Sentinel-5p (TROPOMI), and Sentinel-5) and geostationary satellites (Sentinel-4, GEMS, and TEMPO) will provide more detailed knowledge of ozone and its precursors for east Asia and the entire globe. The data assimilation framework will also be used for chemical OSSE studies to evaluate and optimize the current and future observing systems.

21 CFR 82.1261 - D&C Orange No. 11.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 11. 82.1261 Section 82.1261 Food... CERTIFIED PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1261 D&C Orange No. 11. The color additive D&C Orange No. 11 shall conform in identity and specifications to the requirements...

21 CFR 82.1260 - D&C Orange No. 10.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 10. 82.1260 Section 82.1260 Food... CERTIFIED PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1260 D&C Orange No. 10. The color additive D&C Orange No. 10 shall conform in identity and specifications to the requirements...

The Fiscal Impact of the D.C. Voucher Program

ERIC Educational Resources Information Center

Aud, Susan L.; Michos, Leon

2006-01-01

In August 2004 the first ever federally funded school voucher program began in Washington, D.C. Eligible students could attend a private school of their choice in the District of Columbia. Each participant received up to $7,500 for school tuition, fees, and transportation. In addition, the D.C. Public School System (DCPS) and D.C. charter school…

Comparison of Water Vapor Measurements by Airborne Sun Photometer and Diode Laser Hygrometer on the NASA DC-8

DOE Office of Scientific and Technical Information (OSTI.GOV)

Livingston, J. M.; Schmid, Beat; Russell, P. B.

In January-February 2003 the 14-channel NASA Ames Airborne Tracking Sunphotometer 30 (AATS) and the NASA Langley/Ames Diode Laser Hygrometer (DLH) were flown on the NASA DC-8 aircraft. AATS measured column water vapor on the aircraft-to-sun path, while DLH measured local water vapor in the free stream between the aircraft fuselage and an outboard engine cowling. The AATS and DLH measurements were compared for two DC-8 vertical profiles by differentiating the AATS column measurement and/or integrating the DLH local measurement over the altitude range of each profile (7.7-10 km and 1.2-12.5 km). These comparisons extend, for the first time, tests ofmore » AATS water vapor retrievals to altitudes >~6 km and column contents <0.1 g cm-2. To our knowledge this is the first time suborbital spectroscopic water vapor measurements using the 940-nm band have been tested in conditions so high and dry. For both profiles layer water vapor (LWV) from AATS and DLH were highly correlated, with r2 0.998, rms difference 7.2% and bias (AATS minus DLH) 0.9%. For water vapor densities AATS and DLH had r2 0.968, rms difference 27.6%, and bias (AATS minus DLH) -4.2%. These results compare favorably with previous comparisons of AATS water vapor to in situ results for altitudes <~6 km, columns ~0.1 to 5 g cm-2 and densities ~0.1 to 17 g m-3.« less

Theory of multiwave mixing within the superconducting kinetic-inductance traveling-wave amplifier

NASA Astrophysics Data System (ADS)

Erickson, R. P.; Pappas, D. P.

2017-03-01

We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first developing a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear RF traveling waves. Our theory allows us to calculate signal gain versus signal frequency in the presence of a frequency stop gap, based solely on loading design. We present results for both three-wave mixing (3WM), with applied dc bias, and four-wave mixing (4WM), without dc. Our theory predicts an intrinsic and deterministic origin to undulations of 4WM signal gain with signal frequency, apart from extrinsic sources, such as impedance mismatch, and shows that such undulations are absent from 3WM signal gain achievable with dc. Our theory is extensible to amplifiers based on Josephson junctions in a lumped LC-ladder transmission line (TWPA).

Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications

NASA Astrophysics Data System (ADS)

Ziegler, Volker; Berg, Michael; Tobler, Hans; Woelk, Claus; Deufel, Reinhard; Trasser, Andreas; Schumacher, Hermann; Alekseev, Egor; Pavlidis, Dimitris; Dickmann, Juergen

1999-02-01

In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V.

76 FR 20992 - Sun Chemical Corp.; Filing of Color Additive Petition

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-14

... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration [Docket No. FDA-2011-C-0050] Sun Chemical Corp.; Filing of Color Additive Petition AGENCY: Food and Drug Administration, HHS... filed a petition proposing that the color additive regulations for D&C Red No. 6 and D&C Red No. 7 be...

An L-section DC electric field switchable bulk acoustic wave solidly mounted resonator filter based on Ba0.5Sr0.5TiO3.

PubMed

Saddik, George N; York, Robert A

2012-09-01

This paper reports on the modeling, fabrication, and experimental results of a voltage switchable barium strontium titanate solidly mounted resonator filter at 6 GHz. The filter insertion loss was measured to be -4.26 dB and the return loss to be -13.5 dB. The 3-dB bandwidth was measured to be 72 MHz and the quality factor was calculated to be 83. The data were collected at a dc bias voltage of 10 V. Temperature data were also collected, and the filter demonstrated a 0.71-dB increase in insertion loss and a 7-MHz decrease in center frequency with increase in temperature.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Experimental demonstration of real-time adaptively modulated DDO-OFDM systems with a high spectral efficiency up to 5.76bit/s/Hz transmission over SMF links.

PubMed

Chen, Ming; He, Jing; Tang, Jin; Wu, Xian; Chen, Lin

2014-07-28

In this paper, a FPGAs-based real-time adaptively modulated 256/64/16QAM-encoded base-band OFDM transceiver with a high spectral efficiency up to 5.76bit/s/Hz is successfully developed, and experimentally demonstrated in a simple intensity-modulated direct-detection optical communication system. Experimental results show that it is feasible to transmit a raw signal bit rate of 7.19Gbps adaptively modulated real-time optical OFDM signal over 20km and 50km single mode fibers (SMFs). The performance comparison between real-time and off-line digital signal processing is performed, and the results show that there is a negligible power penalty. In addition, to obtain the best transmission performance, direct-current (DC) bias voltage for MZM and launch power into optical fiber links are explored in the real-time optical OFDM systems.

Differential correction capability of the GTDS using TDRSS data

NASA Technical Reports Server (NTRS)

Liu, S. Y.; Soskey, D. G.; Jacintho, J.

1980-01-01

A differential correction (DC) capability was implemented in the Goddard Trajectory Determination System (GTDS) to process satellite tracking data acquired via the Tracking and Data Relay Satellite System (TRDRSS). Configuration of the TDRSS is reviewed, observation modeling is presented, and major features of the capability are discussed. The following types of TDRSS data can be processed by GTDS: two way relay range and Doppler measurements, hybrid relay range and Doppler measurements, one way relay Doppler measurements, and differenced one way relay Doppler measurements. These data may be combined with conventional ground based direct tracking data. By using Bayesian weighted least squares techniques, the software allows the simultaneous determination of the trajectories of up to four different satellites - one user satellite and three relay satellites. In addition to satellite trajectories, the following parameters can be optionally solved: for drag coefficient, reflectivity of a satellite for solar radiation pressure, transponder delay, station position, and biases.

Quantum State Transmission in a Superconducting Charge Qubit-Atom Hybrid

PubMed Central

Yu, Deshui; Valado, María Martínez; Hufnagel, Christoph; Kwek, Leong Chuan; Amico, Luigi; Dumke, Rainer

2016-01-01

Hybrids consisting of macroscopic superconducting circuits and microscopic components, such as atoms and spins, have the potential of transmitting an arbitrary state between different quantum species, leading to the prospective of high-speed operation and long-time storage of quantum information. Here we propose a novel hybrid structure, where a neutral-atom qubit directly interfaces with a superconducting charge qubit, to implement the qubit-state transmission. The highly-excited Rydberg atom located inside the gate capacitor strongly affects the behavior of Cooper pairs in the box while the atom in the ground state hardly interferes with the superconducting device. In addition, the DC Stark shift of the atomic states significantly depends on the charge-qubit states. By means of the standard spectroscopic techniques and sweeping the gate voltage bias, we show how to transfer an arbitrary quantum state from the superconducting device to the atom and vice versa. PMID:27922087

21 CFR 81.30 - Cancellation of certificates.

Code of Federal Regulations, 2013 CFR

2013-04-01

... taken to remove foods, drugs, and cosmetics containing this color additive from the market on the basis... evidence before him that no action has to be taken to remove from the market food, ingested drugs and... Black No. 1. Ext. D&C Yellow No. 5. Ext. D&C Yellow No. 6. Ext. D&C Red No. 1. Ext. D&C Red No. 2. Ext...

21 CFR 81.30 - Cancellation of certificates.

Code of Federal Regulations, 2011 CFR

2011-04-01

... taken to remove foods, drugs, and cosmetics containing this color additive from the market on the basis... evidence before him that no action has to be taken to remove from the market food, ingested drugs and... Black No. 1. Ext. D&C Yellow No. 5. Ext. D&C Yellow No. 6. Ext. D&C Red No. 1. Ext. D&C Red No. 2. Ext...

21 CFR 81.30 - Cancellation of certificates.

Code of Federal Regulations, 2012 CFR

2012-04-01

... taken to remove foods, drugs, and cosmetics containing this color additive from the market on the basis... evidence before him that no action has to be taken to remove from the market food, ingested drugs and... Black No. 1. Ext. D&C Yellow No. 5. Ext. D&C Yellow No. 6. Ext. D&C Red No. 1. Ext. D&C Red No. 2. Ext...

21 CFR 81.30 - Cancellation of certificates.

Code of Federal Regulations, 2010 CFR

2010-04-01

... taken to remove foods, drugs, and cosmetics containing this color additive from the market on the basis... evidence before him that no action has to be taken to remove from the market food, ingested drugs and... Black No. 1. Ext. D&C Yellow No. 5. Ext. D&C Yellow No. 6. Ext. D&C Red No. 1. Ext. D&C Red No. 2. Ext...

21 CFR 81.30 - Cancellation of certificates.

Code of Federal Regulations, 2014 CFR

2014-04-01

... taken to remove foods, drugs, and cosmetics containing this color additive from the market on the basis... evidence before him that no action has to be taken to remove from the market food, ingested drugs and... Black No. 1. Ext. D&C Yellow No. 5. Ext. D&C Yellow No. 6. Ext. D&C Red No. 1. Ext. D&C Red No. 2. Ext...

21 CFR 82.1254 - D&C Orange No. 4.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 4. 82.1254 Section 82.1254 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1254 D&C Orange No. 4. The color additive D&C Orange No. 4 shall conform in identity and specifications to the requirements of § 74.1254(a...

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

PubMed Central

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-01-01

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s. PMID:26950128

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System.

PubMed

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-03-02

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.

Waves, particles, and interactions in reduced dimensions

NASA Astrophysics Data System (ADS)

Zhang, Yiming

This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.

Pyroelectric response mechanism of barium strontium titanate ceramics in dielectric bolometer mode: The underlying essence of the enhancing effect of direct current bias field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, Chaoliang; Cao, Sheng; Yan, Shiguang

Pyroelectric response mechanism of Ba{sub 0.70}Sr{sub 0.30}TiO{sub 3} ceramics under dielectric bolometer (DB) mode was investigated by dielectric and pyroelectric properties measurement. The variations of total, intrinsic, and induced pyroelectric coefficients (p{sub tot}, p{sub int}, p{sub ind}) with temperatures and bias fields were analyzed. p{sub int} plays the dominant role to p{sub tot} through most of the temperature range and p{sub ind} will be slightly higher than p{sub int} above T{sub 0}. The essence of the enhancing effect of DC bias field on pyroelectric coefficient can be attributed to the high value of p{sub int}. This mechanism is useful formore » the pyroelectric materials (DB mode) applications.« less

A Design of Finite Memory Residual Generation Filter for Sensor Fault Detection

NASA Astrophysics Data System (ADS)

Kim, Pyung Soo

2017-04-01

In the current paper, a residual generation filter with finite memory structure is proposed for sensor fault detection. The proposed finite memory residual generation filter provides the residual by real-time filtering of fault vector using only the most recent finite measurements and inputs on the window. It is shown that the residual given by the proposed residual generation filter provides the exact fault for noisefree systems. The proposed residual generation filter is specified to the digital filter structure for the amenability to hardware implementation. Finally, to illustrate the capability of the proposed residual generation filter, extensive simulations are performed for the discretized DC motor system with two types of sensor faults, incipient soft bias-type fault and abrupt bias-type fault. In particular, according to diverse noise levels and windows lengths, meaningful simulation results are given for the abrupt bias-type fault.

Advanced Code-Division Multiplexers for Superconducting Detector Arrays

NASA Astrophysics Data System (ADS)

Irwin, K. D.; Cho, H. M.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Niemack, M. D.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Vale, L. R.

2012-06-01

Multiplexers based on the modulation of superconducting quantum interference devices are now regularly used in multi-kilopixel arrays of superconducting detectors for astrophysics, cosmology, and materials analysis. Over the next decade, much larger arrays will be needed. These larger arrays require new modulation techniques and compact multiplexer elements that fit within each pixel. We present a new in-focal-plane code-division multiplexer that provides multiplexing elements with the required scalability. This code-division multiplexer uses compact lithographic modulation elements that simultaneously multiplex both signal outputs and superconducting transition-edge sensor (TES) detector bias voltages. It eliminates the shunt resistor used to voltage bias TES detectors, greatly reduces power dissipation, allows different dc bias voltages for each TES, and makes all elements sufficiently compact to fit inside the detector pixel area. These in-focal plane code-division multiplexers can be combined with multi-GHz readout based on superconducting microresonators to scale to even larger arrays.

Adjuvant chemotherapy with sequential cytokine-induced killer (CIK) cells in stage IB non-small cell lung cancer.

PubMed

Li, Da-Peng; Li, Wei; Feng, Jun; Chen, Kai; Tao, Min

2015-01-01

For non-small cell lung cancer (NSCLC) patients at stage IB, adjuvant chemotherapy does not improve survival. Evidence suggests that dendritic cell (DC)-activated cytokine-induced killer (DC-CIK) cell therapy in addition to chemotherapy improves survival for stage I-IIIA NSCLC patients after surgery, but there are not enough data to confirm this benefit specifically for those at stage IB. Herein, we retrospectively evaluated the efficacy and safety of this therapy administered to stage IB NSCLC patients. Sixty-six patients were treated with four-cycle adjuvant chemotherapy initiated 3 weeks after surgical resection. In addition, 28 of these patients underwent DC-CIK therapy on a trimonthly basis (average 3.1 times, range 1-6) beginning 1 month after chemotherapy. The disease-free survival (DFS) rates of the two groups were statistically similar, although patients who received DC-CIK therapy showed slightly higher 1- and 2-year DFS rates (100.0% and 96.4%, respectively, compared with 81.6% and 76.3%). More importantly, patients in the DC-CIK therapy group had significantly longer overall survival (p=0.018). For patients who received treatment after recurrence, the DC-CIK therapy group had longer progression-free survival compared with the chemotherapy-only group. In addition, patients given DC-CIK therapy experienced less fatigue and appetite loss. The rate of adverse side effects was similar between the two groups. In conclusion, for these stage IB NSCLC patients, DC-CIK therapy significantly improved 2-year DFS rates compared with those who received chemotherapy only. DC-CIK therapy also benefited patients' quality of life, and adverse events were acceptable.

Oscillatory bistability of real-space transfer in semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Do˙ttling, R.; Scho˙ll, E.

1992-01-01

Charge transport parallel to the layers of a modulation-doped GaAs/AlxGa1-xAs heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent AlxGa1-xAs layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage U0 and the load resistance RL. For large RL subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Recent Progress in Silicon Mems Oscillators

DTIC Science & Technology

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

Gated high speed optical detector

NASA Technical Reports Server (NTRS)

Green, S. I.; Carson, L. M.; Neal, G. W.

1973-01-01

The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

Self-Sustained Ultrafast Pulsation in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng

2001-01-01

High frequency, narrow-band self-pulsating operation is demonstrated in two coupled vertical-cavity surface-emitting lasers (VCSELs). The coupled VCSELs provide an ideal source for high-repetition rate (over 40 GHz), sinusoidal-like modulated laser source with Gaussian-like near- and far-field profiles. We also show that the frequency of the modulation can be tuned by the inter-VCSEL separation or by DC-bias level.

Plasma processing of superconducting radio frequency cavities

NASA Astrophysics Data System (ADS)

Upadhyay, Janardan

The development of plasma processing technology of superconducting radio frequency (SRF) cavities not only provides a chemical free and less expensive processing method, but also opens up the possibility for controlled modification of the inner surfaces of the cavity for better superconducting properties. The research was focused on the transition of plasma etching from two dimensional flat surfaces to inner surfaces of three dimensional (3D) structures. The results could be applicable to a variety of inner surfaces of 3D structures other than SRF cavities. Understanding the Ar/Cl2 plasma etching mechanism is crucial for achieving the desired modification of Nb SRF cavities. In the process of developing plasma etching technology, an apparatus was built and a method was developed to plasma etch a single cell Pill Box cavity. The plasma characterization was done with the help of optical emission spectroscopy. The Nb etch rate at various points of this cavity was measured before processing the SRF cavity. Cylindrical ring-type samples of Nb placed on the inner surface of the outer wall were used to measure the dependence of the process parameters on plasma etching. The measured etch rate dependence on the pressure, rf power, dc bias, temperature, Cl2 concentration and diameter of the inner electrode was determined. The etch rate mechanism was studied by varying the temperature of the outer wall, the dc bias on the inner electrode and gas conditions. In a coaxial plasma reactor, uniform plasma etching along the cylindrical structure is a challenging task due to depletion of the active radicals along the gas flow direction. The dependence of etch rate uniformity along the cylindrical axis was determined as a function of process parameters. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the asymmetry was studied by changing the contour of the inner electrode. The optimized contour of the electrode based on these measurements was chosen for SRF cavity processing.

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Dielectric-spectroscopy approach to ferrofluid nanoparticle clustering induced by an external electric field.

PubMed

Rajnak, Michal; Kurimsky, Juraj; Dolnik, Bystrik; Kopcansky, Peter; Tomasovicova, Natalia; Taculescu-Moaca, Elena Alina; Timko, Milan

2014-09-01

An experimental study of magnetic colloidal particles cluster formation induced by an external electric field in a ferrofluid based on transformer oil is presented. Using frequency domain isothermal dielectric spectroscopy, we study the influence of a test cell electrode separation distance on a low-frequency relaxation process. We consider the relaxation process to be associated with an electric double layer polarization taking place on the particle surface. It has been found that the relaxation maximum considerably shifts towards lower frequencies when conducting the measurements in the test cells with greater electrode separation distances. As the electric field intensity was always kept at a constant value, we propose that the particle cluster formation induced by the external ac electric field accounts for that phenomenon. The increase in the relaxation time is in accordance with the Schwarz theory of electric double layer polarization. In addition, we analyze the influence of a static electric field generated by dc bias voltage on a similar shift in the relaxation maximum position. The variation of the dc electric field for the hysteresis measurements purpose provides understanding of the development of the particle clusters and their decay. Following our results, we emphasize the utility of dielectric spectroscopy as a simple, complementary method for detection and study of clusters of colloidal particles induced by external electric field.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, G.; Rehak, P.; Xi, D.

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier. 6 figs.

21 CFR 82.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Blue No. 4. 82.1104 Section 82.1104 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1104 D&C Blue No. 4. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74.1104(a)(1...

21 CFR 82.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Blue No. 4. 82.1104 Section 82.1104 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1104 D&C Blue No. 4. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74.1104(a)(1...

21 CFR 82.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Blue No. 4. 82.1104 Section 82.1104 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1104 D&C Blue No. 4. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74.1104(a)(1...

21 CFR 82.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Blue No. 4. 82.1104 Section 82.1104 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1104 D&C Blue No. 4. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74.1104(a)(1...

21 CFR 82.1104 - D&C Blue No. 4.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Blue No. 4. 82.1104 Section 82.1104 Food and... PROVISIONALLY LISTED COLORS AND SPECIFICATIONS Drugs and Cosmetics § 82.1104 D&C Blue No. 4. The color additive D&C Blue No. 4 shall conform in identity and specifications to the requirements of § 74.1104(a)(1...

Spreading Freedom and Saving Money. The Fiscal Impact of the D.C. Voucher Program

ERIC Educational Resources Information Center

Aud, Susan L.; Michos, Leon

2006-01-01

In August 2004 the first ever federally funded school voucher program began in Washington, D.C. Eligible students could attend a private school of their choice in the District of Columbia. Each participant received up to $7,500 for school tuition, fees, and transportation. In addition, the D.C. Public School System (DCPS) and D.C. charter school…

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

PubMed

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems

PubMed Central

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-01-01

The impact of high-voltage–high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between −13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers. PMID:29065526

Microwave Sanitization of Color Additives Used in Cosmetics: Feasibility Study

PubMed Central

Jasnow, S. B.; Smith, J. L.

1975-01-01

Microwave exposure has been explored as a method of microbiologically sanitizing color additives used in cosmetic products. Selected microbiologically unacceptable cosmetic color additives, D&C red no. 7 Ca lake (certified synthetic organic color), carmine (natural organic color not subject to certification), and chromium hydroxide green (inorganic color not subject to certification), were submitted to microwave exposure. Gram-negative bacteria were eliminated, as verified by enrichment procedures, and levels of gram-positive bacteria were reduced. Generally, analytical and dermal safety studies indicated no significant alterations in physical, chemical, and toxicological properties of the colors. Sanitization was also successfully performed on other colors (D&C red no. 9 Ba lake, D&C red no. 12 Ba lake, D&C green no. 5, and FD&C red no. 4); initial physical and chemical tests were satisfactory. Results indicated that this method of sanitization is feasible and warrants further investigation. PMID:1164010

Reduction of Secondary Flow in Inclined Orifice Pulse Tubes by Addition of DC Flow

NASA Astrophysics Data System (ADS)

Shiraishi, M.; Fujisawa, Y.; Murakami, M.; Nanako, A.

2004-06-01

The effect of using a second orifice valve to reduce convective losses caused by gravity-driven convective secondary flow in inclined orifice pulse tube refrigerators was investigated. The second orifice valve was installed between a reservoir and a low-pressure line of a compressor. When the valve was open, an additional DC flow directed to the hot end of the refrigerator was generated to counterbalance the convective secondary flow in the core region by opening the valve. Experimental results indicated that with increasing additional DC flow to an optimum level, the convective secondary flow decreased and the cooling performance improved, although further increase of the DC flow over the level caused the cooling performance to degrade. In summary, the second orifice valve was effective in reducing both the convective losses without affecting the cooling performance at an inclination angle < 70° where convective losses were negligibly small.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Magnetic response of hybrid ferromagnetic and antiferromagnetic core-shell nanostructures

NASA Astrophysics Data System (ADS)

Khan, U.; Li, W. J.; Adeela, N.; Irfan, M.; Javed, K.; Wan, C. H.; Riaz, S.; Han, X. F.

2016-03-01

The synthesis of FeTiO3-Ni(Ni80Fe20) core-shell nanostructures by a two-step method (sol-gel and DC electrodeposition) has been demonstrated. XRD analysis confirms the rhombohedral crystal structure of FeTiO3(FTO) with space group R3&cmb.macr;. Transmission electron microscopy clearly depicts better morphology of nanostructures with shell thicknesses of ~25 nm. Room temperature magnetic measurements showed significant enhancement of magnetic anisotropy for the permalloy (Ni80Fe20)-FTO over Ni-FTO core-shell nanostructures. Low temperature magnetic measurements of permalloy-FeTiO3 core-shell structure indicated a strong exchange bias mechanism with magnetic coercivity below the antiferromagnetic Neel temperature (TN = 59 K). The exchange bias is attributed to the alignment of magnetic moments in the antiferromagnetic material at low temperature. Our scheme opens a path towards optimum automotive systems and wireless communications wherein broader bandwidths and smaller sizes are required.The synthesis of FeTiO3-Ni(Ni80Fe20) core-shell nanostructures by a two-step method (sol-gel and DC electrodeposition) has been demonstrated. XRD analysis confirms the rhombohedral crystal structure of FeTiO3(FTO) with space group R3&cmb.macr;. Transmission electron microscopy clearly depicts better morphology of nanostructures with shell thicknesses of ~25 nm. Room temperature magnetic measurements showed significant enhancement of magnetic anisotropy for the permalloy (Ni80Fe20)-FTO over Ni-FTO core-shell nanostructures. Low temperature magnetic measurements of permalloy-FeTiO3 core-shell structure indicated a strong exchange bias mechanism with magnetic coercivity below the antiferromagnetic Neel temperature (TN = 59 K). The exchange bias is attributed to the alignment of magnetic moments in the antiferromagnetic material at low temperature. Our scheme opens a path towards optimum automotive systems and wireless communications wherein broader bandwidths and smaller sizes are required. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07946b

Calculation of the radial electric field with RF sheath boundary conditions in divertor geometry

NASA Astrophysics Data System (ADS)

Gui, B.; Xia, T. Y.; Xu, X. Q.; Myra, J. R.; Xiao, X. T.

2018-02-01

The equilibrium electric field that results from an imposed DC bias potential, such as that driven by a radio frequency (RF) sheath, is calculated using a new minimal two-field model in the BOUT++ framework. Biasing, using an RF-modified sheath boundary condition, is applied to an axisymmetric limiter, and a thermal sheath boundary is applied to the divertor plates. The penetration of the bias potential into the plasma is studied with a minimal self-consistent model that includes the physics of vorticity (charge balance), ion polarization currents, force balance with E× B , ion diamagnetic flow (ion pressure gradient) and parallel electron charge loss to the thermal and biased sheaths. It is found that a positive radial electric field forms in the scrape-off layer and it smoothly connects across the separatrix to the force-balanced radial electric field in the closed flux surface region. The results are in qualitative agreement with the experiments. Plasma convection related to the E× B net flow in front of the limiter is also obtained from the calculation.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE PAGES

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; ...

2017-09-11

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

NASA Astrophysics Data System (ADS)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

Low speed phaselock speed control system. [for brushless dc motor

NASA Technical Reports Server (NTRS)

Fulcher, R. W.; Sudey, J. (Inventor)

1975-01-01

A motor speed control system for an electronically commutated brushless dc motor is provided which includes a phaselock loop with bidirectional torque control for locking the frequency output of a high density encoder, responsive to actual speed conditions, to a reference frequency signal, corresponding to the desired speed. The system includes a phase comparator, which produces an output in accordance with the difference in phase between the reference and encoder frequency signals, and an integrator-digital-to-analog converter unit, which converts the comparator output into an analog error signal voltage. Compensation circuitry, including a biasing means, is provided to convert the analog error signal voltage to a bidirectional error signal voltage which is utilized by an absolute value amplifier, rotational decoder, power amplifier-commutators, and an arrangement of commutation circuitry.

High Temperature Performance of a SiC MESFET Based Oscillator

NASA Technical Reports Server (NTRS)

Schwartz, Zachary D.; Ponchak, George E.

2005-01-01

A hybrid, UHF-Band differential oscillator based on 10 w SiC RF Power Metal Semiconductor Field Effect Transistor (MESFET) has been designed, fabricated and characterized through 475 C. Circuit is fabricated on an alumina substrate with thin film spiral inductors, chip capacitors, chip resistors, and wire bonds for all crossovers and interconnectors. The oscillator delivers 15.7 dBm at 515 MHz into a 50 Ohm load at 125 C with a DC to RF conversion efficiency of 2,8%. After tuning the load impedance, the oscillator delivers 18.8 dBm at 610 MHz at 200 C with a DC to RF conversion efficiency of 5.8%. Finally, by tuning the load and bias conditions, the oscillator delivers 4.9 dBm at 453 MHz at 475 C.

An eigensystem realization algorithm using data correlations (ERA/DC) for modal parameter identification

NASA Technical Reports Server (NTRS)

Juang, Jer-Nan; Cooper, J. E.; Wright, J. R.

1987-01-01

A modification to the Eigensystem Realization Algorithm (ERA) for modal parameter identification is presented in this paper. The ERA minimum order realization approach using singular value decomposition is combined with the philosophy of the Correlation Fit method in state space form such that response data correlations rather than actual response values are used for modal parameter identification. This new method, the ERA using data correlations (ERA/DC), reduces bias errors due to noise corruption significantly without the need for model overspecification. This method is tested using simulated five-degree-of-freedom system responses corrupted by measurement noise. It is found for this case that, when model overspecification is permitted and a minimum order solution obtained via singular value truncation, the results from the two methods are of similar quality.

Induction of an oxalate decarboxylase in the filamentous fungus Trametes versicolor by addition of inorganic acids.

PubMed

Zhu, Cui Xia; Hong, Feng

2010-01-01

In order to improve yields and to reduce the cost of oxalate decarboxylase (OxDC, EC 4.1.1.2), the induction of OxDC in the white-rot fungus Trametes versicolor was studied in this work. OxDC was induced by addition of inorganic acids including hydrochloric acid, sulfuric acid, and phosphoric acid to culture media. The results showed that all the acids could enhance OxDC expression. The activity of the acid-induced OxDC rose continuously. All of the OxDC volumetric activities induced by the inorganic acids were higher than 20.0 U/L and were two times higher than that obtained with oxalic acid. OxDC productivity was around 4.0 U*L(-1)*day(-1). The highest specific activity against total protein was 3.2 U/mg protein at day 8 after induction of sulfuric acid, and the specific activity against mycelial dry weight was 10.6 U/g at day 9 after induction of hydrochloric acid. The growth of mycelia was inhibited slightly when the pH values in culture media was around 2.5-3.0, while the growth was inhibited heavily when the pH was lower than 2.5.

Development of Nanomechanical Sensors for Breast Cancer Biomarkers

DTIC Science & Technology

2008-06-01

semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

Device having two optical ports for switching applications

DOEpatents

Rosen, Ayre; Stabile, Paul J.

1991-09-24

A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

Space Station Redesign Team: Final report to the Advisory Committee on the Redesign of the Space Station

NASA Technical Reports Server (NTRS)

1993-01-01

This report is the result of the Space Station Redesign Team's activity. Its purpose is to present without bias, and in appropriate detail, the characteristics and cost of three design and management approaches for the Space Station Freedom. It was presented to the Advisory Committee on the Redesign of the Space Station on 7 Jun. 1993, in Washington, D.C.

Quantum noise in SIS mixers

NASA Astrophysics Data System (ADS)

Zorin, A. B.

1985-03-01

In the present, quantum-statistical analysis of SIS heterodyne mixer performance, the conventional three-port model of the mixer circuit and the microscopic theory of superconducting tunnel junctions are used to derive a general expression for a noise parameter previously used for the case of parametric amplifiers. This expression is numerically evaluated for various quasiparticle current step widths, dc bias voltages, local oscillator powers, signal frequencies, signal source admittances, and operation temperatures.

Low power loss and field-insensitive permeability of Fe-6.5%Si powder cores with manganese oxide-coated particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junnan, E-mail: junnanli1991@163.com, E-mail: rzhgong@hust.edu.cn; Wang, Xian; Xu, Xiaojun

Fe-6.5%Si alloy powders coated with manganese oxides using an innovative in situ process were investigated. The in-situ coating of the insulating oxides was realized with a KMnO{sub 4} solution by a chemical process. The insulating manganese oxides with mixed valance state were verified by X-ray photoelectron spectroscopy analysis. The thickness of the insulating layer on alloy particles was determined to be in a range of 20–210 nm, depending upon the KMnO{sub 4} concentration. The powder core loss and the change in permeability under a DC-bias field were measured at frequencies ranging from 50 to 100 kHz. The experiments indicated that themore » Fe-6.5%Si powder cores with a 210 nm-thick manganese oxide layer not only showed a low core loss of 459 mW/cm{sup 3} at 100 kHz but also showed a small reduction in permeability (μ(H)/μ(0) = 85% for μ = 42) at a DC-bias field of 80 Oe. This work has defined a novel pathway to realizing low core loss and field-insensitive permeability for Fe-Si powder cores.« less

DC-biased AC-electroosmotic and AC-electrothermal flow mixing in microchannels.

PubMed

Ng, Wee Yang; Goh, Shireen; Lam, Yee Cheong; Yang, Chun; Rodríguez, Isabel

2009-03-21

This paper presents a novel approach of mixing two laminar flowing streams in microchannels. The mixer consists of a pair of electrodes disposed along a fluidic channel. By energizing the electrodes with a DC-biased (2.5 V) AC voltage (20 Vpp), an electrokinetic flow is induced with a flow profile perpendicular to that of the incoming laminar streams of liquids to be mixed. As a result, the flow lines of the incoming streams and the induced flow are forced to crossover and very efficient stirring and mixing at short mixing length can be achieved. The mixer can be operated from the AC-electroosmotic (ACEO) (sigma=1 mS/m, f=100 kHz) to the AC-electrothermal (ACET) (sigma=500 mS/m, f=500 kHz) flow regimes. The mixing efficiency in the ACEO regime was 92%, with a mixing length of 600 microm (Q=2 microL/min), an estimated mixing time of 69 ms and an induced ACEO flow velocity of approximately 725 microm/s. The mixing efficiency in the ACET regime was 65% for a mixing length of approximately 1200 microm. The mixer is efficient and suitable for mixing reagents in a fluid media from low to high conductivity as required in diverse microfluidic applications.

Filterless frequency 12-tupling optical millimeter-wave generation using two cascaded dual-parallel Mach-Zehnder modulators.

PubMed

Zhu, Zihang; Zhao, Shanghong; Zheng, Wanze; Wang, Wei; Lin, Baoqin

2015-11-10

A novel frequency 12-tupling optical millimeter-wave (mm-wave) generation using two cascaded dual-parallel Mach-Zehnder modulators (DP-MZMs) without an optical filter is proposed and demonstrated by computer simulation. By properly adjusting the amplitude and phase of radio frequency (RF) driving signal and the direct current (DC) bias points of two DP-MZMs, a 120 GHz mm-wave with an optical sideband suppression ratio (OSSR) of 25.1 dB and a radio frequency spurious suppression ratio (RFSSR) of 19.1 dB is shown to be generated from a 10 GHz RF driving signal, which largely reduces the response frequency of electronic devices. Furthermore, it is also proved to be valid that even if the phase difference of RF driving signals, the RF driving voltage, and the DC bias voltage deviate from the ideal values to a certain degree, the performance is still acceptable. Since no optical filter is employed to suppress the undesired optical sidebands, a high-spectral-purity mm-wave signal tunable from 48 to 216 GHz can be obtained theoretically when a RF driving signal from 4 to 18 GHz is applied to the DP-MZMs, and the system can be readily implemented in wavelength-division-multiplexing upconversion systems to provide high-quality optical local oscillator signal.

90° switching of polarization in La3+-doped SrBi2Ta2O9 thin films

NASA Astrophysics Data System (ADS)

Liu, J. S.; Zhang, S. R.; Zeng, H. Z.; Fei, W. D.; Du, S. Y.

2006-05-01

The crystal structure and polarization switching behavior of SrBi1.4La0.6Ta2O9 (SBLT) thin films have been studied by x-ray diffraction and piezoresponse force microscopy (PFM), respectively. Compared with SrBi2Ta2O9 (SBT), SBLT thin films show a reduced orthorhombic distortion. The polarization rotation of SBLT thin film, which is driven by negative and positive direct current (dc) biases, has been investigated by a combination of vertical and lateral PFM (VPFM and LPFM, respectively). After dc bias applications, the VPFM image is hardly changed, whereas the LPFM image experiences an obvious variation. It is believed that such difference is caused by 90° polarization switching. However, this kind of switching can be only realized by the exchange of a axis and b axis. By virtue of the reduced orthorhombic distortion, the a-b exchange in SBLT is easier than that in SBT. Unfortunately, stress is created due to the 90° polarization switching in SBLT thin films. The internal stress is found to increase with the repeated switching cycles, and so the polarization reorientation in SBLT is constrained. Thus, the fatigue resistance of SBLT thin films is not thought to be as good as that of SBT.

Time-dependent photon heat transport through a mesoscopic Josephson device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Wen-Ting; Zhao, Hong-Kang, E-mail: zhaohonk@bit.edu.cn

The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green’s function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heatmore » branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction. - Highlights: • The time-oscillating photon heat current through a mesoscopic Josephson Junction has been investigated. • The Landauer-like formula of photon heat current has been derived by the nonequilibrium Green’s function approach. • Nonlinear behaviors are exhibited in the photon heat current resulting from the self inductance and Coulomb interaction. • The oscillation structure of heat current is composed of the superposition of oscillations with different periods.« less

Accelerated life-test methods and results for implantable electronic devices with adhesive encapsulation.

PubMed

Huang, Xuechen; Denprasert, Petcharat May; Zhou, Li; Vest, Adriana Nicholson; Kohan, Sam; Loeb, Gerald E

2017-09-01

We have developed and applied new methods to estimate the functional life of miniature, implantable, wireless electronic devices that rely on non-hermetic, adhesive encapsulants such as epoxy. A comb pattern board with a high density of interdigitated electrodes (IDE) could be used to detect incipient failure from water vapor condensation. Inductive coupling of an RF magnetic field was used to provide DC bias and to detect deterioration of an encapsulated comb pattern. Diodes in the implant converted part of the received energy into DC bias on the comb pattern. The capacitance of the comb pattern forms a resonant circuit with the inductor by which the implant receives power. Any moisture affects both the resonant frequency and the Q-factor of the resonance of the circuitry, which was detected wirelessly by its effects on the coupling between two orthogonal RF coils placed around the device. Various defects were introduced into the comb pattern devices to demonstrate sensitivity to failures and to correlate these signals with visual inspection of failures. Optimized encapsulation procedures were validated in accelerated life tests of both comb patterns and a functional neuromuscular stimulator under development. Strong adhesive bonding between epoxy and electronic circuitry proved to be necessary and sufficient to predict 1 year packaging reliability of 99.97% for the neuromuscular stimulator.

Plasma-Based Tunable High Frequency Power Limiter

NASA Astrophysics Data System (ADS)

Semnani, Abbas; Macheret, Sergey; Peroulis, Dimitrios

2016-09-01

Power limiters are often employed to protect sensitive receivers from being damaged or saturated by high-power incoming waves. Although wideband low-power limiters based on semiconductor technology are widely available, the options for high-power frequency-selective ones are very few. In this work, we study the application of a gas discharge tube (GDT) integrated in an evanescent-mode (EVA) cavity resonator as a plasma-based power limiter. Plasmas can inherently handle higher power in comparison with semiconductor diodes. Also, using a resonant structure provides the ability of having both lower threshold power and frequency-selective limiting, which are important if only a narrowband high-power signal is targeted. Higher input RF power results in stronger discharge in the GDT and consequently higher electron density which results in larger reflection. It is also possible to tune the threshold power by pre-ionizing the GDT with a DC bias voltage. As a proof of concept, a 2-GHz EVA resonator loaded by a 90-V GDT was fabricated and measured. With reasonable amount of insertion loss, the limiting threshold power was successfully tuned from 8.3 W to 590 mW when the external DC bias was varied from 0 to 80 V. The limiter performed well up to 100 W of maximum available input power.

A High Voltage Ratio and Low Ripple Interleaved DC-DC Converter for Fuel Cell Applications

PubMed Central

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

PubMed

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

EGFR-driven up-regulation of decoy receptor 3 in keratinocytes contributes to the pathogenesis of psoriasis.

PubMed

Wu, Nan-Lin; Huang, Duen-Yi; Hsieh, Shie-Liang; Hsiao, Cheng-Hsiang; Lee, Te-An; Lin, Wan-Wan

2013-10-01

Decoy receptor 3 (DcR3) is a soluble receptor of Fas ligand (FasL), LIGHT (TNFSF14) and TNF-like molecule 1A (TL1A) and plays pleiotropic roles in many inflammatory and autoimmune disorders and malignant diseases. In cutaneous biology, DcR3 is expressed in primary human epidermal keratinocytes and is upregulated in skin lesions in psoriasis, which is characterized by chronic inflammation and angiogenesis. However, the regulatory mechanisms of DcR3 over-expression in skin lesions of psoriasis are unknown. Here, we demonstrate that DcR3 can be detected in both dermal blood vessels and epidermal layers of psoriatic skin lesions. Analysis of serum samples showed that DcR3 was elevated, but FasL was downregulated in psoriatic patients compared with normal individuals. Additional cell studies revealed a central role of epidermal growth factor receptor (EGFR) in controlling the basal expression of DcR3 in keratinocytes. Activation of EGFR by epidermal growth factor (EGF) and transforming growth factor (TGF)-α strikingly upregulated DcR3 production. TNF-αenhanced DcR3 expression in both keratinocytes and endothelial cells compared with various inflammatory cytokines involved in psoriasis. Additionally, TNF-α-enhanced DcR3 expression in keratinocytes was inhibited when EGFR was knocked down or EGFR inhibitor was used. The NF-κB pathway was critically involved in the molecular mechanisms underlying the action of EGFR and inflammatory cytokines. Collectively, the novel regulatory mechanisms of DcR3 expression in psoriasis, particularly in keratinocytes and endothelial cells, provides new insight into the pathogenesis of psoriasis and may also contribute to the understanding of other diseases that involve DcR3 overexpression. Copyright © 2013 Elsevier B.V. All rights reserved.

Threshold-linear analysis of measures of fertility in artificial insemination data and days to calving in beef cattle.

PubMed

Donoghue, K A; Rekaya, R; Bertrand, J K; Misztal, I

2004-04-01

Mating and calving records for 47,533 first-calf heifers in Australian Angus herds were used to examine the relationship between days to calving (DC) and two measures of fertility in AI data: 1) calving to first insemination (CFI) and 2) calving success (CS). Calving to first insemination and calving success were defined as binary traits. A threshold-linear Bayesian model was employed for both analyses: 1) DC and CFI and 2) DC and CS. Posterior means (SD) of additive covariance and corresponding genetic correlation between the DC and CFI were -0.62 d (0.19 d) and -0.66 (0.12), respectively. The corresponding point estimates between the DC and CS were -0.70 d (0.14 d) and -0.73 (0.06), respectively. These genetic correlations indicate a strong, negative relationship between DC and both measures of fertility in AI data. Selecting for animals with shorter DC intervals genetically will lead to correlated increases in both CS and CFI. Posterior means (SD) for additive and residual variance and heritability for DC for the DC-CFI analysis were 23.5 d2 (4.1 d2), 363.2 d2 (4.8 d2), and 0.06 (0.01), respectively. The corresponding parameter estimates for the DC-CS analysis were very similar. Posterior means (SD) for additive, herd-year and service sire variance and heritability for CFI were 0.04 (0.01), 0.06 (0.06), 0.14 (0.16), and 0.03 (0.01), respectively. Posterior means (SD) for additive, herd-year, and service sire variance and heritability for CS were 0.04 (0.01), 0.07 (0.07), 0.14 (0.16), and 0.03 (0.01), respectively. The similarity of the parameter estimates for CFI and CS suggest that either trait could be used as a measure of fertility in AI data. However, the definition of CFI allows the identification of animals that not only record a calving event, but calve to their first insemination, and the value of this trait would be even greater in a more complete dataset than that used in this study. The magnitude of the correlations between DC and CS-CFI suggest that it may be possible to use a multitrait approach in the evaluation of AI and natural service data, and to report one genetic value that could be used for selection purposes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie; Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17; Gahan, David, E-mail: david.gahan@impedans.com

A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this researchmore » work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.« less

Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haipeng Wang; Genfa Wu; H. Phillips

2005-05-16

A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system andmore » this system. Engineering work progress toward the first plasma creation will be reported here.« less

Asymmetric Differential Resistance of Current Biased Mesoscopic AuFe Wires

NASA Astrophysics Data System (ADS)

Eom, J.; Chandrasekhar, V.; Neuttiens, G.; Strunk, C.; van Haesendonck, C.; Bruynseraede, Y.

1996-03-01

An anomalous asymmetry is found in the differential resistance dV/dI of mesoscopic AuFe wires as a function of dc bias current at low temperatures. The samples are fabricated by ion implanting Au wires of length 1.0 - 35.0 μ m and of width 0.1 - 1.0 μ m with Fe at two different concentrations, 0.2 at.% and 0.4 at.%. The asymmetry is more pronounced in narrow and short samples. The asymmetric component of dV/dI increases with decreasing temperature, and saturates below the maximum in the spin glass resistance. It is found that the lead configuration for the four-terminal measurement also affects the asymmetric component of dV/dI.

Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Setup for potential bias experiments on the Saha Institute of Nuclear Physics tokamak

NASA Astrophysics Data System (ADS)

Ghosh, J.; Pal, R.; Chattopadhyay, P. K.

1999-12-01

An experimental setup for studying the influence of the radial electric field on very low qa plasma on the Saha Institute of Nuclear Physics tokamak is presented. A high current, high voltage pulsed power supply, using a semiconductor controlled rectifier (SCR) as a dc switch is developed and used to bias a tungsten electrode inserted inside the plasma. The electrode's exposed length and its position inside the plasma are controlled by a double bellows assembly to optimize the electrode-exposed length. We show that using the force commutation method to turn the SCR off to get the power pulse desired has good potential for carrying out similar kinds of studies, especially in a low budget small tokamak.

Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakhri, M.; Goerrn, P.; Riedl, T.

2011-09-19

Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organicmore » light emitting diode displays.« less

Impact of rapamycin on phenotype and tolerogenic function of dendritic cells via intravital optical imaging

NASA Astrophysics Data System (ADS)

Luo, Meijie; Zhang, Zhihong

2014-03-01

Rapamycin (RAPA) as a unique tolerance-promoting therapeutic drug is crucial to successful clinical organ transplantation. DC (Dendritic cells) play a critical role in antigen presentation to T cells to initiate immune responses involved in tissue rejection. Although the influence of RAPA on DC differentiation and maturation had been reported by some research groups, it is still controversial and unclear right now. In addition, it is also lack of study on investigating the role of DC in DTH reaction via intravital optical imaging. Herein, we investigated the effect of rapamycin on phenotype and function of bone marrow monocyte-derived DC both in vitro and in vivo. In vitro experiments by flow cytometry (FACS) showed that DC displayed decreased cell size and lower expression levels of surface molecule CD80 induced by RAPA; Furthermore, the phagocytic ability to OVA of DC was inhibited by RAPA started from 1 h to 2 h post co-incubation, but recovered after 4 h; In addition, the capacity of DC to activate naïve OT-II T cell proliferation was also inhibited at 3 day post co-incubation, but had no effect at 5 day, the data indicated this effect was reversible when removing the drug. More importantly, the DC-T interaction was monitored both in vitro and in intravital lymph node explant, and showed that RAPA-DC had a significant lower proportion of long-lived (>15min) contacts. Thus, RAPA displayed immunosuppressive to phenotypic and functional maturation of DC, and this phenomenon induced by RAPA may favorable in the clinical organ transplantation in future.

Loss of Pace Capture on the Ablation Line During Pulmonary Vein Isolation versus "Dormant Conduction": Is Adenosine Expendable?

PubMed

Schaeffer, Benjamin; Willems, Stephan; Sultan, Arian; Hoffmann, Boris A; Lüker, Jakob; Schreiber, Doreen; Akbulak, Ruken; Moser, Julia; Kuklik, Pawel; Steven, Daniel

2015-10-01

Permanent pulmonary vein isolation (PVI) remains an essential goal of ablation therapy in patients with atrial fibrillation. Aim of this study was the intraindividual comparison of unexcitability to pacing along the ablation line versus dormant conduction (DC) as additional procedural endpoints. A total of 58 patients with paroxysmal atrial fibrillation (PAF) underwent PVI by circumferential ablation of ipsilateral pulmonary veins (PVs), followed by testing for DC by adenosine administration. Irrespective of the presence of DC, pacing along the ablation line for left atrium capture was performed and additional radio frequency energy applied if necessary. PVs with initial DC were retested after achieving unexcitability. PVI was achieved in 224 of 224 PVs. In 33 of 224 PVs (15%) DC was revealed. At 92 of 112 ablation lines (82%) sites of excitability were found. Three (9%) of the initial 33 PVs with DC showed further DC after achieving unexcitability at repeated testing. Thirty-two of 33 assumed areas of unmasked PV-LA reconduction as revealed by DC-testing showed a corresponding site of excitability on the ablation line. After a follow-up of 11.6 ± 3.4 months 79% of patients were free of arrhythmia. Pacing for unexcitability can safely identify potential sites of DC and even sites that would have not been detected by testing for DC. Unexcitability, therefore, serves as a suitable and safe procedural endpoint not only for patients with contraindications to adenosine administration. Our data suggest that adenosine may be expendable when achieving unexcitability along the ablation line. © 2015 Wiley Periodicals, Inc.

Phase I dendritic cell p53 peptide vaccine for head and neck cancer.

PubMed

Schuler, Patrick J; Harasymczuk, Malgorzata; Visus, Carmen; Deleo, Albert; Trivedi, Sumita; Lei, Yu; Argiris, Athanassios; Gooding, William; Butterfield, Lisa H; Whiteside, Theresa L; Ferris, Robert L

2014-05-01

p53 accumulation in head and neck squamous cell carcinoma (HNSCC) cells creates a targetable tumor antigen. Adjuvant dendritic cell (DC)-based vaccination against p53 was tested in a phase I clinical trial. Monocyte-derived DC from 16 patients were loaded with two modified HLA-class I p53 peptides (Arm 1), additional Th tetanus toxoid peptide (Arm 2), or additional Th wild-type (wt) p53-specific peptide (Arm 3). Vaccine DCs (vDC) were delivered to inguinal lymph nodes at three time points. vDC phenotype, circulating p53-specific T cells, and regulatory T cells (Treg) were serially monitored by flow cytometry and cytokine production by Luminex. vDC properties were compared with those of DC1 generated with an alternative maturation regimen. No grade II-IV adverse events were observed. Two-year disease-free survival of 88% was favorable. p53-specific T-cell frequencies were increased postvaccination in 11 of 16 patients (69%), with IFN-γ secretion detected in four of 16 patients. Treg frequencies were consistently decreased (P = 0.006) relative to prevaccination values. The phenotype and function of DC1 were improved relative to vDC. Adjuvant p53-specific vaccination of patients with HNSCC was safe and associated with promising clinical outcome, decreased Treg levels, and modest vaccine-specific immunity. HNSCC patients' DC required stronger maturation stimuli to reverse immune suppression and improve vaccine efficacy. ©2014 AACR.

Control of nanoparticle size and amount by using the mesh grid and applying DC-bias to the substrate in silane ICP-CVD process

NASA Astrophysics Data System (ADS)

Yoo, Seung-Wan; Hwang, Nong-Moon; You, Shin-Jae; Kim, Jung-Hyung; Seong, Dae-Jin

2017-11-01

The effect of applying a bias to the substrate on the size and amount of charged crystalline silicon nanoparticles deposited on the substrate was investigated in the inductively coupled plasma chemical vapor deposition process. By inserting the grounded grid with meshes above the substrate, the region just above the substrate was separated from the plasma. Thereby, crystalline Si nanoparticles formed by the gas-phase reaction in the plasma could be deposited directly on the substrate, successfully avoiding the formation of a film. Moreover, the size and the amount of deposited nanoparticles could be changed by applying direct current bias to the substrate. When the grid of 1 × 1-mm-sized mesh was used, the nanoparticle flux was increased as the negative substrate bias increased from 0 to - 50 V. On the other hand, when a positive bias was applied to the substrate, Si nanoparticles were not deposited at all. Regardless of substrate bias voltages, the most frequently observed nanoparticles synthesized with the grid of 1 × 1-mm-sized mesh had the size range of 10-12 nm in common. When the square mesh grid of 2-mm size was used, as the substrate bias was increased from - 50 to 50 V, the size of the nanoparticles observed most frequently increased from the range of 8-10 to 40-45 nm but the amount that was deposited on the substrate decreased.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Abscisic acid regulation of DC8, a carrot embryonic gene. [Daucus carota

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hatzopoulos, P.; Fong, F.; Sung, Z.R.

1990-10-01

DC8 encodes a hydrophylic 66 kilodalton protein located in the cytoplasm and cell walls of carrot (Daucus carota) embryo and endosperm. During somatic embryogenesis, the levels of DC8 mRNA and protein begin to increase 5 days after removal of auxin. To study the role of abscisic acid (ABA) in the regulation of DC8 gene, fluridone, 1-methyl-3-phenyl,-5(3-trifluoro-methyl-phenyl)-4(1H)-pyridinone, was used to inhibit the endogenous ABA content of the embryos. Fluridone, 50 micrograms per milliliter, effectively inhibits the accumulation of ABA in globular-tage embryos. Western and Northern analysis show that when fluridone is added to the culture medium DC8 protein and mRNA decreasemore » to very low levels. ABA added to fluridone supplemented culture media restores the DC8 protein and mRNA to control levels. Globular-stage embryos contain 0.9 to 1.4 {times} 10{sup {minus}7} molar ABA while 10{sup {minus}6} molar exogenously supplied ABA is the optimal concentration for restoration of DC8 protein accumulation in fluridone-treated embryos. The mRNA level is increased after 15 minutes of ABA addition and reaches maximal levels by 60 minutes. Evidence is presented that, unlike other ABA-regulated genes, DC8 is not induced in nonembryonic tissues via desiccation nor addition of ABA.« less

Induction of RNA interference in dendritic cells.

PubMed

Li, Mu; Qian, Hua; Ichim, Thomas E; Ge, Wei-Wen; Popov, Igor A; Rycerz, Katarzyna; Neu, John; White, David; Zhong, Robert; Min, Wei-Ping

2004-01-01

Dendritic cells (DC) reside at the center of the immunological universe, possessing the ability both to stimulate and inhibit various types of responses. Tolerogenic/regulatory DC with therapeutic properties can be generated through various means of manipulations in vitro and in vivo. Here we describe several attractive strategies for manipulation of DC using the novel technique of RNA interference (RNAi). Additionally, we overview some of our data regarding yet undescribed characteristics of RNAi in DC such as specific transfection strategies, persistence of gene silencing, and multi-gene silencing. The advantages of using RNAi for DC genetic manipulation gives rise to the promise of generating tailor-made DC that can be used effectively to treat a variety of immunologically mediated diseases.

A Practical Tutorial on Modified Condition/Decision Coverage

NASA Technical Reports Server (NTRS)

Hayhurst, Kelly J.; Veerhusen, Dan S.; Chilenski, John J.; Rierson, Leanna K.

2001-01-01

This tutorial provides a practical approach to assessing modified condition/decision coverage (MC/DC) for aviation software products that must comply with regulatory guidance for DO-178B level A software. The tutorial's approach to MC/DC is a 5-step process that allows a certification authority or verification analyst to evaluate MC/DC claims without the aid of a coverage tool. In addition to the MC/DC approach, the tutorial addresses factors to consider in selecting and qualifying a structural coverage analysis tool, tips for reviewing life cycle data related to MC/DC, and pitfalls common to structural coverage analysis.

The influence of NH3 on NO2 conversion in a dc corona discharge in N2:O2:CO2:NO2:NH3 mixture

NASA Astrophysics Data System (ADS)

Dors, Mirosław; Mizeraczyk, Jerzy; Czech, Tadeusz; Konieczka, Jerzy

1996-10-01

The aim of this paper is to investigate the influence of NH3 additive (540-1470 ppm) on the conversion of NO2 and the creation of NO and N2O in a mixture of N2:O2:CO2: NO2:NH3 subjected to the so-called direct current (dc) corona discharge. The dc corona discharge was generated in a needle-to-plate reactor. Seven positively polarized needles were used as one electrode and a stainless steel plate as the other. The time-averaged discharge current was varied from 0 to 7 mA. It was found that the dc corona discharge decomposed NO2 and produced NO and N2O. The reduction of NO2 was higher without NH3 additive if the residence time of the operating gas was relatively short. However, in a longer corona discharge processing the NH3 additive may be useful for reduction of NO2.

21 CFR 74.1260 - D&C Orange No. 10.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Orange No. 10. 74.1260 Section 74.1260 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1260 D&C Orange No. 10. (a) Identity. (1) The color...

21 CFR 74.1261 - D&C Orange No. 11.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Orange No. 11. 74.1261 Section 74.1261 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Drugs § 74.1261 D&C Orange No. 11. (a) Identity. (1) The color...

21 CFR 74.3230 - D&C Red No. 17.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 17. 74.3230 Section 74.3230 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR.... The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of...

21 CFR 74.3230 - D&C Red No. 17.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Red No. 17. 74.3230 Section 74.3230 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR.... The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of...

21 CFR 74.3710 - D&C Yellow No. 10.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Yellow No. 10. 74.3710 Section 74.3710 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3710 D&C Yellow No. 10. (a) Identity. The...

21 CFR 74.3710 - D&C Yellow No. 10.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Yellow No. 10. 74.3710 Section 74.3710 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3710 D&C Yellow No. 10. (a) Identity. The...

21 CFR 74.3230 - D&C Red No. 17.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Red No. 17. 74.3230 Section 74.3230 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR.... The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of...

21 CFR 74.3230 - D&C Red No. 17.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Red No. 17. 74.3230 Section 74.3230 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR.... The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of...

21 CFR 74.3230 - D&C Red No. 17.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Red No. 17. 74.3230 Section 74.3230 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR.... The color additive D&C Red No. 17 shall conform in identity and specifications to the requirements of...

21 CFR 74.3710 - D&C Yellow No. 10.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Yellow No. 10. 74.3710 Section 74.3710 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3710 D&C Yellow No. 10. (a) Identity. The...

21 CFR 74.1330 - D&C Red No. 30.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Red No. 30. 74.1330 Section 74.1330 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... this chapter as safe for use in color additive mixtures for coloring drugs. (b) Specifications. D&C Red...

21 CFR 74.1330 - D&C Red No. 30.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 30. 74.1330 Section 74.1330 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... this chapter as safe for use in color additive mixtures for coloring drugs. (b) Specifications. D&C Red...

21 CFR 82.1255 - D&C Orange No. 5.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Orange No. 5. 82.1255 Section 82.1255 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) The color additive D&C Orange No. 5. may be safely used for coloring externally applied drugs in...

21 CFR 82.1255 - D&C Orange No. 5.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Orange No. 5. 82.1255 Section 82.1255 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) The color additive D&C Orange No. 5. may be safely used for coloring externally applied drugs in...

NREL: Renewable Resource Data Center - Solar Resource Information

Science.gov Websites

Solar Resource Information The Renewable Resource Data Center (RReDC) offers a collection of data and tools to assist with solar resource research. Learn more about RReDC's solar resource: Data Models siting. In addition, RReDC offers a solar resource glossary, unit conversion information, and an

21 CFR 74.1331 - D&C Red No. 31.

Code of Federal Regulations, 2010 CFR

2010-04-01

...) Color additive mixtures for drug use made with D&C Red No. 31 may contain only those diluents that are suitable and that are listed in part 73 of this chapter as safe for use in color additive mixtures for... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR...

On Application of Model Predictive Control to Power Converter with Switching

NASA Astrophysics Data System (ADS)

Zanma, Tadanao; Fukuta, Junichi; Doki, Shinji; Ishida, Muneaki; Okuma, Shigeru; Matsumoto, Takashi; Nishimori, Eiji

This paper concerns a DC-DC converter control. In DC-DC converters, there exist both continuous components such as inductance, conductance and resistance and discrete ones, IGBT and MOSFET as semiconductor switching elements. Such a system can be regarded as a hybrid dynamical system. Thus, this paper presents a dc-dc control technique based on the model predictive control. Specifically, a case in which the load of the dc-dc converter changes from active to sleep is considered. In the case, a control method which makes the output voltage follow to the reference quickly in transition, and the switching frequency be constant in steady state. In addition, in applying the model predictive control to power electronics circuits, the switching characteristic of the device and the restriction condition for protection are also considered. The effectiveness of the proposed method is illustrated by comparing a conventional method through some simulation results.

Investigation of sensing mechanism and signal amplification in carbon nanotube based microfluidic liquid-gated transistors via pulsating gate bias.

PubMed

Wijaya, I Putu Mahendra; Nie, Tey Ju; Rodriguez, Isabel; Mhaisalkar, Subodh G

2010-06-07

The advent of a carbon nanotube liquid-gated transistor (LGFET) for biosensing applications allows the possibility of real-time and label-free detection of biomolecular interactions. The use of an aqueous solution as dielectric, however, has traditionally restricted the operating gate bias (VG) within |VG| < 1 V, due to the electrolysis of water. Here, we propose pulsed-gating as a facile method to extend the operation window of LGFETs to |VG| > 1 V. A comparison between simulation and experimental results reveals that at voltages in excess of 1 V, the LGFET sensing mechanism has a contribution from two factors: electrostatic gating as well as capacitance modulation. Furthermore, the large IDS drop observed in the |VG| > 1 V region indicates that pulsed-gating may be readily employed as a simple method to amplify the signal in the LGFET and pushes the detection limit down to attomolar concentration levels, an order of magnitude improvement over conventionally employed DC VG biasing.

"It runs in my family …": The association of perceived family history with body dissatisfaction and weight bias internalization among overweight women.

PubMed

Eisenberg, Miriam H; Street, Richard L; Persky, Susan

2017-04-01

Aspects of poor body acceptance (BA), such as internalized weight bias and dissatisfaction with one's shape and size, are the strongest predictors of disordered eating and are associated with reduced engagement in healthy behaviors. Perceiving oneself as having a family history of overweight (PFH) could boost BA by increasing attributions for inherited, biological causes of weight. A community sample of 289 women who were overweight from the Washington, DC metropolitan area who were dissatisfied with their current weight (68% Black; 32% White) enrolled in this study in 2012. PFH of overweight was associated with decreased internalized weight bias among white women and marginally increased body shape satisfaction generally. The relationship between PFH and BA was not explained by biological attributions for weight. Perceptions that overweight runs in one's family can be protective with respect to BA. This is suggestive of the potential benefit of integrating family-based approaches into weight management interventions.

Expression profiles of genes involved in jasmonic acid biosynthesis and signaling during growth and development of carrot.

PubMed

Wang, Guanglong; Huang, Wei; Li, Mengyao; Xu, Zhisheng; Wang, Feng; Xiong, Aisheng

2016-09-01

Jasmonates (JAs) are recognized as essential regulators in response to environmental stimuli and plant development. Carrot is an Apiaceae vegetable with great value and undergoes significant size changes over the course of plant growth. However, JA accumulation and its potential roles in carrot growth remain unclear. Here, methyl JA (MeJA) levels and expression profiles of JA-related genes were analyzed in carrot roots and leaves at five developmental stages. MeJA levels in the roots and leaves were the highest at the first stage and decreased as carrot growth proceeded. Transcript levels of several JA-related genes (Dc13-LOX1, Dc13-LOX2, DcAOS, DcAOC, DcOPR2, DcOPR3, DcOPCL1, DcJAR1, DcJMT, DcCOI1, DcJAZ1, DcJAZ2, DcMYC2, DcCHIB/PR3, DcLEC, and DcVSP2) were not well correlated with MeJA accumulation during carrot root and leaf development. In addition, some JA-related genes (DcJAR1, DcJMT, DcCOI1, DcMYC2, and DcVSP2) showed differential expression between roots and leaves. These results suggest that JAs may regulate carrot plant growth in stage-dependent and organ-specific manners. Our work provides novel insights into JA accumulation and its potential roles during carrot growth and development. © The Author 2016. Published by Oxford University Press on behalf of the Institute of Biochemistry and Cell Biology, Shanghai Institutes for Biological Sciences, Chinese Academy of Sciences. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Particle-in-cell simulation of ion energy distributions on an electrode by applying tailored bias waveforms in the afterglow of a pulsed plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diomede, Paola; Economou, Demetre J.; Donnelly, Vincent M.

2011-04-15

A Particle-in-Cell simulation with Monte Carlo Collisions (PIC-MCC) was conducted of the application of tailored DC voltage steps on an electrode, during the afterglow of a capacitively-coupled pulsed-plasma argon discharge, to control the energy of ions incident on the counter-electrode. Staircase voltage waveforms with selected amplitudes and durations resulted in ion energy distributions (IED) with distinct narrow peaks, with controlled energies and fraction of ions under each peak. Temporary electron heating at the moment of application of a DC voltage step did not influence the electron density decay in the afterglow. The IED peaks were 'smeared' by collisions, especially atmore » the higher pressures of the range (10-40 mTorr) investigated.« less

Dynamical properties of epitaxial ferroelectric superlattices

NASA Astrophysics Data System (ADS)

Kim, Y.; Gerhardt, R. A.; Erbil, A.

1997-04-01

The dynamical properties of epitaxial ferroelectric heterostructures have been investigated by studying the dielectric behavior under external electric field. A phenomenon with a giant permittivity was observed. At low frequencies, real permittivities as high as 420 000 have been measured. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field, correlating with the dc bias-field dependence of ac permittivities. We model these observations as a result of the motion of pinned domain-wall lattices, having sliding-mode motion at high electric fields. The good agreement between the experimental and theoretical results suggests that the deposited interdigitated electrode pattern plays a crucial role in controlling domain-wall dynamics. The pinning of the domain wall comes from a nucleation barrier to the creation of new domain walls.

DC High Voltage Conditioning of Photoemission Guns at Jefferson Lab FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Benson, S. V.; Biallas, G.

2009-08-04

DC high voltage photoemission electron guns with GaAs photocathodes have been used to produce polarized electron beams for nuclear physics experiments for about 3 decades with great success. In the late 1990s, Jefferson Lab adopted this gun technology for a free electron laser (FEL), but to assist with high bunch charge operation, considerably higher bias voltage is required compared to the photoguns used at the Jefferson Lab Continuous Electron Beam Accelerator Facility. The FEL gun has been conditioned above 400 kV several times, albeit encountering non-trivial challenges with ceramic insulators and field emission from electrodes. Recently, high voltage processing withmore » krypton gas was employed to process very stubborn field emitters. This work presents a summary of the high voltage techniques used to high voltage condition the Jefferson Lab FEL photoemission gun.« less

Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography.

PubMed

Di Russo, Enrico; Blum, Ivan; Houard, Jonathan; Da Costa, Gérald; Blavette, Didier; Rigutti, Lorenzo

2017-12-01

The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

An improved large signal model of InP HEMTs

NASA Astrophysics Data System (ADS)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Tissue-specific differentiation of a circulating CCR9- pDC-like common dendritic cell precursor.

PubMed

Schlitzer, Andreas; Heiseke, Alexander F; Einwächter, Henrik; Reindl, Wolfgang; Schiemann, Matthias; Manta, Calin-Petru; See, Peter; Niess, Jan-Hendrik; Suter, Tobias; Ginhoux, Florent; Krug, Anne B

2012-06-21

The ontogenic relationship between the common dendritic cell (DC) progenitor (CDP), the committed conventional DC precursor (pre-cDC), and cDC subpopulations in lymphoid and nonlymphoid tissues has been largely unraveled. In contrast, the sequential steps of plasmacytoid DC (pDC) development are less defined, and it is unknown at which developmental stage and location final commitment to the pDC lineage occurs. Here we show that CCR9(-) pDCs from murine BM which enter the circulation and peripheral tissues have a common DC precursor function in vivo in the steady state, in contrast to CCR9(+) pDCs which are terminally differentiated. On adoptive transfer, the fate of CCR9(-) pDC-like precursors is governed by the tissues they enter. In the BM and liver, most transferred CCR9(-) pDC-like precursors differentiate into CCR9(+) pDCs, whereas in peripheral lymphoid organs, lung, and intestine, they additionally give rise to cDCs. CCR9(-) pDC-like precursors which are distinct from pre-cDCs can be generated from the CDP. Thus, CCR9(-) pDC-like cells are novel CDP-derived circulating DC precursors with pDC and cDC potential. Their final differentiation into functionally distinct pDCs and cDCs depends on tissue-specific factors allowing adaptation to local requirements under homeostatic conditions.

A trial of reliable estimation of non-double-couple component of microearthquakes

NASA Astrophysics Data System (ADS)

Imanishi, K.; Uchide, T.

2017-12-01

Although most tectonic earthquakes are caused by shear failure, it has been reported that injection-induced seismicity and earthquakes occurring in volcanoes and geothermal areas contain non double couple (non-DC) components (e.g, Dreger et al., 2000). Also in the tectonic earthquakes, small non-DC components are beginning to be detected (e.g, Ross et al., 2015). However, it is generally limited to relatively large earthquakes that the non-DC component can be estimated with sufficient accuracy. In order to gain further understanding of fluid-driven earthquakes and fault zone properties, it is important to estimate full moment tensor of many microearthquakes with high precision. In the last AGU meeting, we proposed a method that iteratively applies the relative moment tensor inversion (RMTI) (Dahm, 1996) to source clusters improving each moment tensor as well as their relative accuracy. This new method overcomes the problem of RMTI that errors in the mechanism of reference events lead to biased solutions for other events, while taking advantage of RMTI that the source mechanisms can be determined without a computation of Green's function. The procedure is briefly summarized as follows: (1) Sample co-located multiple earthquakes with focal mechanisms, as initial solutions, determined by an ordinary method. (2) Apply the RMTI to estimate the source mechanism of each event relative to those of the other events. (3) Repeat the step 2 for the modified source mechanisms until the reduction of total residual converges. In order to confirm whether the method can resolve non-DC components, we conducted numerical tests on synthetic data. Amplitudes were computed assuming non-DC sources, amplifying by factor between 0.2 and 4 as site effects, and adding 10% random noise. As initial solutions in the step 1, we gave DC sources with arbitrary strike, dip and rake angle. In a test with eight sources at 12 stations, for example, all solutions were successively improved by iteration. Non-DC components were successfully resolved in spite of the fact that we gave DC sources as initial solutions. The application of the method to microearthquakes in geothermal area in Japan will be presented.

21 CFR 82.1306 - D&C Red No. 6.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 6. 82.1306 Section 82.1306 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) and (b) of this chapter. (b) The color additive D&C Red No. 6 may be safely used for coloring drugs...

21 CFR 82.1307 - D&C Red No. 7.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Red No. 7. 82.1307 Section 82.1307 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) and (b) of this chapter. (b) The color additive D&C Red No. 7 may be safely used for coloring drugs...

21 CFR 82.1307 - D&C Red No. 7.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Red No. 7. 82.1307 Section 82.1307 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) and (b) of this chapter. (b) The color additive D&C Red No. 7 may be safely used for coloring drugs...

21 CFR 82.1306 - D&C Red No. 6.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Red No. 6. 82.1306 Section 82.1306 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED...) and (b) of this chapter. (b) The color additive D&C Red No. 6 may be safely used for coloring drugs...

Thermostable hemicellulases of a bacterium, Geobacillus sp. DC3, isolated from the former Homestake Gold Mine in Lead, South Dakota

USDA-ARS?s Scientific Manuscript database

A thermophilic strain, Geobacillus sp. DC3, capable of producing hemicellulolytic enzymes was isolated from the 1.5-km depth of the former Homestake gold mine in Lead, South Dakota. The DC3 strain expressed a high level of extracellular endoxylanase at 39.5 U/mg protein with additional hemicellulase...

21 CFR 74.3602 - D&C Violet No. 2.

Code of Federal Regulations, 2013 CFR

2013-04-01

... coloring absorbable meniscal tacks made from poly (L-lactic acid) at a level not to exceed 0.15 percent by... 21 Food and Drugs 1 2013-04-01 2013-04-01 false D&C Violet No. 2. 74.3602 Section 74.3602 Food and... ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3602 D&C Violet No. 2. (a) Identity and...

21 CFR 74.3602 - D&C Violet No. 2.

Code of Federal Regulations, 2011 CFR

2011-04-01

... coloring absorbable meniscal tacks made from poly (L-lactic acid) at a level not to exceed 0.15 percent by... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Violet No. 2. 74.3602 Section 74.3602 Food and... ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3602 D&C Violet No. 2. (a) Identity and...

21 CFR 74.3602 - D&C Violet No. 2.

Code of Federal Regulations, 2012 CFR

2012-04-01

... coloring absorbable meniscal tacks made from poly (L-lactic acid) at a level not to exceed 0.15 percent by... 21 Food and Drugs 1 2012-04-01 2012-04-01 false D&C Violet No. 2. 74.3602 Section 74.3602 Food and... ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3602 D&C Violet No. 2. (a) Identity and...

21 CFR 74.3602 - D&C Violet No. 2.

Code of Federal Regulations, 2014 CFR

2014-04-01

... coloring absorbable meniscal tacks made from poly (L-lactic acid) at a level not to exceed 0.15 percent by... 21 Food and Drugs 1 2014-04-01 2014-04-01 false D&C Violet No. 2. 74.3602 Section 74.3602 Food and... ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3602 D&C Violet No. 2. (a) Identity and...

21 CFR 74.3602 - D&C Violet No. 2.

Code of Federal Regulations, 2010 CFR

2010-04-01

... coloring absorbable meniscal tacks made from poly (L-lactic acid) at a level not to exceed 0.15 percent by... 21 Food and Drugs 1 2010-04-01 2010-04-01 false D&C Violet No. 2. 74.3602 Section 74.3602 Food and... ADDITIVES SUBJECT TO CERTIFICATION Medical Devices § 74.3602 D&C Violet No. 2. (a) Identity and...

21 CFR 82.1602 - D&C Violet No. 2.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false D&C Violet No. 2. 82.1602 Section 82.1602 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF CERTIFIED... additive D&C Violet No. 2 shall conform in identity and specifications to the requirements of § 74.1602(a...

An economical fluorescence detector for lab-on-a-chip devices with a light emitting photodiode and a low-cost avalanche photodiode.

PubMed

Wu, Jing; Liu, Xianhu; Wang, Lili; Dong, Lijun; Pu, Qiaosheng

2012-01-21

An economical fluorescence detector was developed with an LED as the exciting source and a low-cost avalanche photodiode (APD) module as a photon sensor. The detector was arranged in an epifluorescence configuration using a microscope objective (20× or 40×) and a dichroic mirror. The low-cost APD was biased by a direct current (DC) high voltage power supply at 121 V, which is much lower than that normally used for a PMT. Both DC and square wave (SW) supplies were used to power the LED and different data treatment protocols, such as simple average for DC mode, software based lock-in amplification and time specific average for SW mode, were tested to maximize the signal-to-noise ratio. Using an LED at a DC mode with simple data averaging, a limit of detection of 0.2 nmol L(-1) for sodium fluorescein was attained, which is among the lowest ever achieved with an LED as an excitation source. The detector was successfully used in both capillary and chip electrophoresis. The most significant advantages of the detector are the compact size and low cost of its parts. The aim of the work is to prove that widely available, low-cost components for civilian use can be successfully used for miniaturized analytical devices.

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology.

PubMed

Malits, Maria; Nemirovsky, Yael

2017-07-29

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode's sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode's perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor's channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate "on-line" temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode's small area and perimeter causes a high 1/ f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing.

Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ankur; Kushner, Mark J.; Iowa State University, Department of Electrical and Computer Engineering, 104 Marston Hall, Ames, Iowa 50011-2151

2005-09-15

The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveformmore » we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO{sub 2} in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture.« less

Exchange bias in bulk layered hydroxylammonium fluorocobaltate (NH₃OH)₂CoF₄.

PubMed

Jagličić, Z; Zentková, M; Mihalik, M; Arnold, Z; Drofenik, M; Kristl, M; Dojer, B; Kasunič, M; Golobič, A; Jagodič, M

2012-02-08

The magnetic properties of layered hydroxylammonium fluorocobaltate (NH(3)OH)(2)CoF(4) were investigated by measuring its dc magnetic susceptibility in zero-field-cooled (ZFC) and field-cooled (FC) regimes, its frequency dependent ac susceptibility, its isothermal magnetization curves after ZFC and FC regimes, and its heat capacity. Effects of pressure and magnetic field on magnetic phase transitions were studied by susceptibility and heat capacity measurements, respectively. The system undergoes a magnetic phase transition from a paramagnetic state to a canted antiferromagnetic state exhibiting a weak ferromagnetic behavior at T(C) = 46.5 K and an antiferromagnetic transition at T(N) = 2.9 K. The most spectacular manifestation of the complex magnetic behavior in this system is a shift of the isothermal magnetization hysteresis loop in a temperature range below 20 K after the FC regime-an exchange bias phenomenon. We investigated the exchange bias as a function of the magnetic field during cooling and as a function of temperature. The observed exchange bias was attributed to the large exchange anisotropy which exists due to the quasi-2D structure of the layered (NH(3)OH)(2)CoF(4) material.

Cathode-less gridded ion thrusters for small satellites

NASA Astrophysics Data System (ADS)

Aanesland, Ane

2016-10-01

Electric space propulsion is now a mature technology for commercial satellites and space missions that requires thrust in the order of hundreds of mN, and with available electric power in the order of kW. Developing electric propulsion for SmallSats (1 to 500 kg satellites) are challenging due to the small space and limited available electric power (in the worst case close to 10 W). One of the challenges in downscaling ion and Hall thrusters is the need to neutralize the positive ion beam to prevent beam stalling. This neutralization is achieved by feeding electrons into the downstream space. In most cases hollow cathodes are used for this purpose, but they are fragile and difficult to implement, and in particular for small systems they are difficult to downscale, both in size and electron current. We describe here a new alternative ion thruster that can provide thrust and specific impulse suitable for mission control of satellites as small as 3 kg. The originality of our thruster lies in the acceleration principles and propellant handling. Continuous ion acceleration is achieved by biasing a set of grids with Radio Frequency voltages (RF) via a blocking capacitor. Due to the different mobility of ions and electrons, the blocking capacitor charges up and rectifies the RF voltage. Thus, the ions are accelerated by the self-bias DC voltage. Moreover, due to the RF oscillations, the electrons escape the thruster across the grids during brief instants in the RF period ensuring a full space charge neutralization of the positive ion beam. Due to the RF nature of this system, the space charge limited current increases by almost a factor of 2 compared to classical DC biased grids, which translates into a specific thrust two times higher than for a similar DC system. This new thruster is called Neptune and operates with only one RF power supply for plasma generation, ion acceleration and electron neutralization. We will present the downscaling of this thruster to a 3cm diameter unit well adapted for a CubeSat or SmallSat mission. This work was supported by Agence Nationale de la Recherche under contract ANR-11-IDEX-0004-02 (Plas@Par) and by SATT Paris-Saclay.

Further insights into prepeak emission in pulsed radiofrequency glow discharge

NASA Astrophysics Data System (ADS)

Valledor, Rebeca; Vega, Paola; Pisonero, Jorge; Nelis, Thomas; Bordel, Nerea

2013-07-01

Side-on optical emission measurements, with spatial and temporal resolution, have been carried out on a modified Grimm type pulsed rf glow discharge, using a copper sample and argon as discharge gas. In particular, the early ignition phase of the pulsed discharge, prepeak, and the beginning of the plateau have been electrically characterized and spectroscopically evaluated along the plasma plume for several argon and copper emission lines. Different pulse repetition frequencies have been used while keeping a constant duty cycle of 25%, covering a range from the μs to the ms pulsed GD. In all the cases a spatially extended discharge has been observed during the first 10-20 μs of the pulse, when the dc bias voltage has not been fully established yet. During this early phase of the pulse, the species present in the chamber are excited following the amplitude of the voltage symmetrical oscillations, and argon and copper emission can be detected at all the distances evaluated along the plasma axis at delays as short as 4 μs. After the first 20 μs approximately, the discharge has contracted close to the sample surface, the dc bias voltage has been almost established and the sputtering process is taking place. Emission registered through side-on observation, at positions relatively far from the sample, decreases and then progressively increases to reach a plateau if the voltage pulse lasts long enough. Moreover, the further the detection position is from the sample surface, the later the increase of the copper and argon emission is observed. Therefore transport phenomena involving both argon and copper species are now evidently leading to an estimated average speed of 100 m/s. Additionally, end-on optical emission measurements have been carried out to evaluate the prepeak emission from the negative glow region close to the sample surface, and then to compare this emission with that occurring at farther positions (side-on detection experiments). The results have shown that the basis of both prepeaks might be different as the prepeak signal measured using end-on detection peaks around 10 μs later than that observed using side-on detection.

Glass Polarization Induced Drift of a Closed-Loop Micro-Accelerometer.

PubMed

Zhou, Wu; He, Jiangbo; Yu, Huijun; Peng, Bei; He, Xiaoping

2018-01-20

The glass polarization effects were introduced in this paper to study the main cause of turn-on drift phenomenon of closed-loop micro-accelerometers. The glass substrate underneath the sensitive silicon structure underwent a polarizing process when the DC bias voltage was applied. The slow polarizing process induced an additional electrostatic field to continually drag the movable mass block from one position to another so that the sensing capacitance was changed, which led to an output drift of micro-accelerometers. This drift was indirectly tested by experiments and could be sharply reduced by a shielding layer deposited on the glass substrate because the extra electrical filed was prohibited from generating extra electrostatic forces on the movable fingers of the mass block. The experimental results indicate the average magnitude of drift decreased about 73%, from 3.69 to 0.99 mV. The conclusions proposed in this paper showed a meaningful guideline to improve the stability of micro-devices based on silicon-on-glass structures.

Glass Polarization Induced Drift of a Closed-Loop Micro-Accelerometer

PubMed Central

He, Jiangbo; Yu, Huijun; Peng, Bei; He, Xiaoping

2018-01-01

The glass polarization effects were introduced in this paper to study the main cause of turn-on drift phenomenon of closed-loop micro-accelerometers. The glass substrate underneath the sensitive silicon structure underwent a polarizing process when the DC bias voltage was applied. The slow polarizing process induced an additional electrostatic field to continually drag the movable mass block from one position to another so that the sensing capacitance was changed, which led to an output drift of micro-accelerometers. This drift was indirectly tested by experiments and could be sharply reduced by a shielding layer deposited on the glass substrate because the extra electrical filed was prohibited from generating extra electrostatic forces on the movable fingers of the mass block. The experimental results indicate the average magnitude of drift decreased about 73%, from 3.69 to 0.99 mV. The conclusions proposed in this paper showed a meaningful guideline to improve the stability of micro-devices based on silicon-on-glass structures. PMID:29361685

Graphene integrated circuits: new prospects towards receiver realisation.

PubMed

Saeed, Mohamed; Hamed, Ahmed; Wang, Zhenxing; Shaygan, Mehrdad; Neumaier, Daniel; Negra, Renato

2017-12-21

This work demonstrates a design approach which enables the fabrication of fully integrated radio frequency (RF) and millimetre-wave frequency direct-conversion graphene receivers by adapting the frontend architecture to exploit the state-of-the-art performance of the recently reported wafer-scale CVD metal-insulator-graphene (MIG) diodes. As a proof-of-concept, we built a fully integrated microwave receiver in the frequency range 2.1-2.7 GHz employing the strong nonlinearity and the high responsivity of MIG diodes to successfully receive and demodulate complex, digitally modulated communication signals at 2.45 GHz. In addition, the fabricated receiver uses zero-biased MIG diodes and consumes zero dc power. With the flexibility to be fabricated on different substrates, the prototype receiver frontend is fabricated on a low-cost, glass substrate utilising a custom-developed MMIC process backend which enables the high performance of passive components. The measured performance of the prototype makes it suitable for Internet-of-Things (IoT) and Radio Frequency Identification (RFID) systems for medical and communication applications.

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

PubMed Central

Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

2016-01-01

Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

A dual-band reconfigurable Yagi-Uda antenna with diverse radiation patterns

NASA Astrophysics Data System (ADS)

Saurav, Kushmanda; Sarkar, Debdeep; Srivastava, Kumar Vaibhav

2017-07-01

In this paper, a dual-band pattern reconfigurable antenna is proposed. The antenna comprises of a dual-band complementary split ring resonators (CSRRs) loaded dipole as the driven element and two copper strips with varying lengths as parasitic segments on both sides of the driven dipole. PIN diodes are used with the parasitic elements to control their electrical length. The CSRRs loading provide a lower order mode in addition to the reference dipole mode, while the parasitic elements along with the PIN diodes are capable of switching the omni-directional radiation of the dual-band driven element to nine different configurations of radiation patterns which include bi-directional end-fire, broadside, and uni-directional end-fire in both the operating bands. A prototype of the designed antenna together with the PIN diodes and DC bias lines is fabricated to validate the concept of dual-band radiation pattern diversity. The simulation and measurement results are in good agreement. The proposed antenna can be used in wireless access points for PCS and WLAN applications.

Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices

NASA Astrophysics Data System (ADS)

Felix, Valentin; Lefaucheux, Philippe; Aubry, Olivier; Golda, Judith; Schulz-von der Gathen, Volker; Overzet, Lawrence J.; Dussart, Rémi

2016-04-01

The failure mechanisms of micro hollow cathode discharges (MHCD) in silicon have been investigated using their I-V characteristics, high speed photography and scanning electron microscopy. Experiments were carried out in helium. We observed I-V instabilities in the form of rapid voltage decreases associated with current spikes. The current spikes can reach values more than 100 times greater than the average MHCD current. (The peaks can be more than 1 Ampere for a few 10’s of nanoseconds.) These current spikes are correlated in time with 3-10 μm diameter optical flashes that occur inside the cavities. The SEM characterizations indicated that blister-like structures form on the Si surface during plasma operation. Thin Si layers detach from the surface in localized regions. We theorize that shallow helium implantation occurs and forms the ‘blisters’ whenever the Si is biased as the cathode. These blisters ‘explode’ when the helium pressure inside them becomes too large leading to the transient micro-arcs seen in both the optical emission and the I-V characteristics. We noted that blisters were never found on the metal counter electrode, even when it was biased as the cathode (and the Si as the anode). This observation led to a few suggestions for delaying the failure of Si MHCDs. One may coat the Si cathode (cavities) with blister resistant material; design the MHCD array to operate with the Si as the anode rather than as the cathode; or use a gas additive to prevent surface damage. Regarding the latter, tests using SF6 as the gas additive successfully prevented blister formation through rapid etching. The result was an enhanced MHCD lifetime.

Calculation of intrinsic stresses in the diamond-like coatings produced by plasma ion deposition in modes of DC and pulse bias potentials

NASA Astrophysics Data System (ADS)

Kalinichenko, A. A.; Perepelkin, S. S.; Strel'nitskij, V. E.

2015-04-01

The formula derivation for calculation of intrinsic stress in diamond-like coatings deposited from the ion flux in modes of continuous and pulsed potentials in view of process of defects formation is given. The criterion of applicability of obtained formula allowing to determine critical parameters of the pulsed potential mode is suggested. Results of calculation of stresses in diamond-like coatings at deposition of low-energy ions C+ from filtered vacuum arc plasma are adduced. The influence of the bias potential, repetition frequency and pulse duration, on the value of intrinsic stress is discussed. Qualitative agreement of calculated stress and experimental data is stated. The important role of deposition temperature in control of intrinsic stress in deposited coating is noted.

Tunable resonant and non-resonant interactions between a phase qubit and LC resonator

NASA Astrophysics Data System (ADS)

Allman, Michael Shane; Whittaker, Jed D.; Castellanos-Beltran, Manuel; Cicak, Katarina; da Silva, Fabio; Defeo, Michael; Lecocq, Florent; Sirois, Adam; Teufel, John; Aumentado, Jose; Simmonds, Raymond W.

2014-03-01

We use a flux-biased radio frequency superconducting quantum interference device (rf SQUID) with an embedded flux-biased direct current (dc) SQUID to generate strong resonant and non-resonant tunable interactions between a phase qubit and a lumped-element resonator. The rf-SQUID creates a tunable magnetic susceptibility between the qubit and resonator providing resonant coupling rates from zero to near the ultra-strong coupling regime. By modulating the magnetic susceptibility, non-resonant parametric coupling achieves rates > 100 MHz . Nonlinearity of the magnetic susceptibility also leads to parametric coupling at subharmonics of the qubit-resonator detuning. Controllable coupling is generically important for constructing coupled-mode systems ubiquitous in physics, useful for both, quantum information architectures and quantum simulators. This work supported by NIST and NSA grant EAO140639.

Heat current through an artificial Kondo impurity beyond linear response

NASA Astrophysics Data System (ADS)

Sierra, Miguel A.; Sánchez, David

2018-03-01

We investigate the heat current of a strongly interacting quantum dot in the presence of a voltage bias in the Kondo regime. Using the slave-boson mean-field theory, we discuss the behavior of the energy flow and the Joule heating. We find that both contributions to the heat current display interesting symmetry properties under reversal of the applied dc bias. We show that the symmetries arise from the behavior of the dot transmission function. Importantly, the transmission probability is a function of both energy and voltage. This allows us to analyze the heat current in the nonlinear regime of transport. We observe that nonlinearities appear already for voltages smaller than the Kondo temperature. Finally, we suggest to use the contact and electric symmetry coefficients as a way to measure pure energy currents.

Novel Fe-based nanocrystalline powder cores with excellent magnetic properties produced using gas-atomized powder

NASA Astrophysics Data System (ADS)

Chang, Liang; Xie, Lei; Liu, Min; Li, Qiang; Dong, Yaqiang; Chang, Chuntao; Wang, Xin-Min; Inoue, Akihisa

2018-04-01

FeSiBPNbCu nanocrystalline powder cores (NPCs) with excellent magnetic properties were fabricated by cold-compaction of the gas-atomized amorphous powder. Upon annealing at the optimum temperature, the NPCs showed excellent magnetic properties, including high initial permeability of 88, high frequency stability up to 1 MHz with a constant value of 85, low core loss of 265 mW/cm3 at 100 kHz for Bm = 0.05 T, and superior DC-bias permeability of 60% at a bias field of 100 Oe. The excellent magnetic properties of the present NPCs could be attributed to the ultrafine α-Fe(Si) phase precipitated in the amorphous matrix and the use of gas-atomized powder coated with a uniform insulation layer.

Behavior of aircraft antiskid braking systems on dry and wet runway surfaces. A slip-velocity-controlled, pressure-bias-modulated system

NASA Technical Reports Server (NTRS)

Stubbs, S. M.; Tanner, J. A.; Smith, E. G.

1979-01-01

The braking and cornering response of a slip velocity controlled, pressure bias modulated aircraft antiskid braking system is investigated. The investigation, conducted on dry and wet runway surfaces, utilized one main gear wheel, brake, and tire assembly of a McDonnell Douglas DC 9 series 10 airplane. The landing gear strut was replaced by a dynamometer. The parameters, which were varied, included the carriage speed, tire loading, yaw angle, tire tread condition, brake system operating pressure, and runway wetness conditions. The effects of each of these parameters on the behavior of the skid control system is presented. Comparisons between data obtained with the skid control system and data obtained from single cycle braking tests without antiskid protection are examined.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

PubMed

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input power was applied, the second, third, fourth, and fifth harmonic distortions of the HVPA with the power MOSFET linearizer (-41.54, -41.80, -48.86, and -46.27 dB, respectively) were also lower than that of the HVPA without the power MOSFET linearizer (-25.85, -43.56, -49.04, and -49.24 dB, respectively). Therefore, we conclude that the power MOSFET linearizer could reduce gain deviation of the HVPA, thus reducing the echo signal harmonic distortions generated by the high-frequency ultrasonic transducers in pulse-echo instrumentation.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

PubMed Central

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-01-01

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (−1.8 and −0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (−2.95 and −3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dBm input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dBm at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dBm at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dBm input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (−48.34, −44.21, −48.34, and −46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (−45.61, −41.57, −45.01, and −45.51 dB, respectively). When five-cycle 20 dBm input power was applied, the second, third, fourth, and fifth harmonic distortions of the HVPA with the power MOSFET linearizer (−41.54, −41.80, −48.86, and −46.27 dB, respectively) were also lower than that of the HVPA without the power MOSFET linearizer (−25.85, −43.56, −49.04, and −49.24 dB, respectively). Therefore, we conclude that the power MOSFET linearizer could reduce gain deviation of the HVPA, thus reducing the echo signal harmonic distortions generated by the high-frequency ultrasonic transducers in pulse-echo instrumentation. PMID:28375165

Joint Services Electronics Program: Electronics Research at the University of Texas at Austin

DTIC Science & Technology

1988-12-31

structures. This system is also used routinely as an in-situ measure of alloy composition. We have shown that significant changes in the principal...RHEED streak intensity and shape are produced by very small changes in adatom coverage and that the profile is noticeably different for Ga and As...characteristic impedance measurement instruments. The oscillation frequency in the waveguide circuit could be varied from 8 to 12 GHz by changing the dc bias

Proceedings of the Annual National Conference on ADA Technology (9th) Held in Washington, DC on 4-7 March 1991

DTIC Science & Technology

1991-03-07

rsolve the attack; delay whil the weapon has to wait; RESOURCE ALLOCATION . PRIORITY OF signal readiness to CONTROL; TARGETS. AND BIAS OF THE SYSTEM...Communications Systems. focal point for Computer Resource He served as project manager for the Management (CRM), Advanced Software development of the Joint...Interface Test Technology (AST), Ada Technology, Systems (JITS) - the world’s largest Joint/Army Interoperability Testing distributed command and

Analogue Hawking radiation in a dc-SQUID array transmission line.

PubMed

Nation, P D; Blencowe, M P; Rimberg, A J; Buks, E

2009-08-21

We propose the use of a superconducting transmission line formed from an array of direct-current superconducting quantum interference devices for investigating analogue Hawking radiation. Biasing the array with a space-time varying flux modifies the propagation velocity of the transmission line, leading to an effective metric with a horizon. Being a fundamentally quantum mechanical device, this setup allows for investigations of quantum effects such as backreaction and analogue space-time fluctuations on the Hawking process.

Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25-micro m Qorvo Process

DTIC Science & Technology

2017-07-27

and sensor systems of interest to US Defense Department applications, particularly for next-generation radar systems. Broadband, efficient, high...A simple GaN high-electron-mobility-transistor (HEMT) TR single-pull double- throw (SPDT) switch consists of at least 2 series- and 2 shunt... simple TR switch that works well up to 6 GHz is shown in Figs. 4 (layout) and 5 (simulation). Complementary DC-bias voltages are applied at inputs A

Power coupling mode transitions induced by tailored voltage waveforms in capacitive oxygen discharges

NASA Astrophysics Data System (ADS)

Derzsi, Aranka; Bruneau, Bastien; Gibson, Andrew Robert; Johnson, Erik; O'Connell, Deborah; Gans, Timo; Booth, Jean-Paul; Donkó, Zoltán

2017-03-01

Low-pressure capacitively coupled radio frequency discharges operated in O2 and driven by tailored voltage waveforms are investigated experimentally and by means of kinetic simulations. Pulse-type (peaks/valleys) and sawtooth-type voltage waveforms that consist of up to four consecutive harmonics of the fundamental frequency are used to study the amplitude asymmetry effect as well as the slope asymmetry effect at different fundamental frequencies (5, 10, and 15 MHz) and at different pressures (50-700 mTorr). Values of the DC self-bias determined experimentally and spatio-temporal excitation rates derived from phase resolved optical emission spectroscopy measurements are compared with particle-in-cell/Monte Carlo collisions simulations. The spatio-temporal distributions of the excitation rate obtained from experiments are well reproduced by the simulations. Transitions of the discharge electron heating mode from the drift-ambipolar mode to the α-mode are induced by changing the number of consecutive harmonics included in the driving voltage waveform or by changing the gas pressure. Changing the number of harmonics in the waveform has a strong effect on the electronegativity of the discharge, on the generation of the DC self-bias and on the control of ion properties at the electrodes, both for pulse-type, as well as sawtooth-type driving voltage waveforms The effect of the surface quenching rate of oxygen singlet delta metastable molecules on the spatio-temporal excitation patterns is also investigated.

Evaluation of a silicon 5 MHz p–n diode actuator with a laterally vibrating extensional mode

NASA Astrophysics Data System (ADS)

Miyazaki, Fumito; Baba, Kazuki; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-05-01

In this paper, we describe p–n diode actuators that are laterally driven by the force induced in a depletion layer. The previously reported p–n diode actuators have been vertically driven. Because the resonant frequency depends on the thickness of the vibrating plate, the integration of resonators with different frequencies on a chip has been difficult. The resonators in this work are driven laterally by using length-extensional vibration. We have developed a compact model based on an analytical expression, in which p–n diode actuators are driven by the forces induced by the spread of the depletion layer. The deflection generated by the p–n diode actuators was proportional to the ratio of the depletion layer width to the resonator thickness as well as the position of the p–n junction. Good agreement of experimental results with the theory was confirmed by comparing the measured values for silicon p–n diode rectangular-plate actuators fabricated using a silicon-on-insulator (SOI) substrate. The displacement amplitude of the actuators was proportional to the DC bias, while the resonant frequency was independent of the DC bias. The latter characteristic is very different from that of widely used electrostatic actuators. Although the amplitude of the actuator measured in this work was very small, it is expected that the amplitude will increase greatly by increasing the doping of the p–n diode actuators.

76 FR 60809 - Procurement List; Additions

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-30

... Agriculture, Agricultural Marketing Service, Washington, DC. Services Service Type/Locations: Grounds... Activity: Department of Agriculture, Agricultural Marketing Service, Washington, DC. Coverage: C-List for... Atmospheric Administration, Norfolk, VA. Service Type/Location: Transient Aircraft Services. Moody AFB, GA...

A Drift Chamber to Measure Charged Particles at COMPASS-II

NASA Astrophysics Data System (ADS)

Heitz, Robert; Compass Collaboration

2013-10-01

A new drift chamber (DC05) will be constructed to replace two tracking detector stations based on straw tubes, ST02 and ST03 in the COMPASS spectrometer. DC05 uses the designs from DC04, a previous drift chamber designed at CEA-Saclay, France, but adds the addition of more wires for improved acceptance. In addition to more wires DC05 will also change its front end electronics using a new pre-amplifier-discriminator chip (CMAD). DC05 consists of 8 layers of anode planes and 21 layers of G-10 material frames carrying cathode planes and gas windows. The wires are orientated with two layers in the vertical x-direction, two layers in the horizontal y-direction, two layers offset +10 deg of the vertical x-direction, and two layers offset -10 deg of the vertical x-direction. The wires in parallel directions are offset half a pitch to resolve left-right ambiguities. The purpose for different wire orientations is to reconstruct the 3D space particle trajectory to fit a particle track. Each layer of wires is covered on the top and bottom by a cathode plane of carbon coated mylar. All these layers are sandwiched between two steel stiffening frames for support and noise reduction. A future drift chamber, DC06, is also being designed based off of DC05. Research funded by NSF-PHY-12-05-671 Medium Energy Nuclear Physics.