Tailoring of Boehmite-Derived Aluminosilicate Aerogel Structure and Properties: Influence of Ti Addition

NASA Technical Reports Server (NTRS)

Hurwitz, Frances I.; Guo, Haiquan; Sheets, Erik J.; Miller, Derek R.; Newlin, Katy N.

2010-01-01

Aluminosilicate aerogels offer potential for extremely low thermal conductivities at temperatures greater than 900 C, beyond where silica aerogels reach their upper temperature limits. Aerogels have been synthesized at various Al:Si ratios, including mullite compositions, using Boehmite (AlOOH) as the Al source, and tetraethoxy orthosilicate as the Si precursor. The Boehmite-derived aerogels are found to form by a self-assembly process of AlOOH crystallites, with Si-O groups on the surface of an alumina skeleton. Morphology, surface area and pore size varies with the crystallite size of the starting Boehmite powder, as well as with synthesis parameters. Ternary systems, including Al-Si-Ti aerogels incorporating a soluble Ti precursor, are possible with careful control of pH. The addition of Ti influences sol viscosity, gelation time pore structure and pore size distribution, as well as phase formation on heat treatment.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marseglia, L.; Saha, K.; Ajoy, A.

The practical implementation of quantum technologies such as quantum commu- nication and quantum cryptography relies on the development of indistinguishable, robust, and bright single photon sources that works at room temperature. The silicon- vacancy (SiV -) center in diamond has emerged as a possible candidate for a single photon source with all these characteristics. Unfortunately, due to the high refraction index mismatch between diamond and air, color centers in diamond show low photon out-coupling. This drawback can be overcome by fabrication of photonic structures that improve the in-coupling of excitation laser to the diamond defect as well as the out-couplingmore » emission from the color centers. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion effciency to single SiV -, targeted to fabricated nanowires. The co-localization of single SiV - defects with the nanostructures yields a ten times higher light coupling effciency as compared to single SiV - in the bulk. This result, with its intrinsic scalability, enables a new class of devices for integrated photonics and quantum information processing.« less

Si light-emitting device in integrated photonic CMOS ICs

NASA Astrophysics Data System (ADS)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Carbon, nitrogen, magnesium, silicon, and titanium isotopic compositions of single interstellar silicon carbide grains from the Murchison carbonaceous chondrite

NASA Technical Reports Server (NTRS)

Hoppe, Peter; Amari, Sachiko; Zinner, Ernst; Ireland, Trevor; Lewis, Roy S.

1994-01-01

Seven hundred and twenty SiC grains from the Murchison CM2 chondrite, ranging in size from 1 to 10 micrometers, were analyzed by ion microprobe mass spectrometry for their C-isotopic compositions. Subsets of the grains were also analyzed for N (450 grains), Si (183 grains), Mg (179 grains), and Ti (28 grains) isotopes. These results are compared with previous measurements on 41 larger SiC grains (up to 15 x 26 micrometers) from a different sample of Murchison analyzed by Virag et al. (1992) and Ireland, Zinner, & Amari (1991a). All grains of the present study are isotopically anomalous with C-12/C-13 ratios ranging from 0.022 to 28.4 x solar, N-14/N-15 ratios from 0.046 to 30 x solar, Si-29/Si-28 from 0.54 to 1.20 x solar, Si-30/Si-28 from 0.42 to 1.14 x solar, Ti-49/Ti-48 from 0.96 to 1.95 x solar, and Ti-50/Ti-48 from 0.94 to 1.39 x solar. Many grains have large Mg-26 excesses from the decay of Al-26 with inferred Al-26/Al-27 ratios ranging up to 0.61, or 12,200 x the ratio of 5 x 10(exp -5) inferred for the early solar system. Several groups can be distinguished among the SiC grains. Most of the grains have C-13 and N-14 excesses, and their Si isotopic compositions (mostly excesses in Si-29 and Si-30) plot close to a slope 1.34 line on a Delta Si-29/Si-28 versus Delta Si-30/Si-28 three-isotope plot. Grains with small C-12/C-13 ratios (less than 10) tend to have smaller or no N-14 excesses and high Al-26/Al-27 ratios (up to 0.01). Grains with C-12/C-13 greater than 150 fall into two groups: grains X have N-15 excesses and Si-29 and Si-30 deficits and the highest (0.1 to 0.6) Al-26/Al-27 ratios; grains Y have N-14 excesses and plot on a slope 0.35 line on a Si three-isotope plot. In addition, large SiC grains of the Virag et al. (1992) study fall into three-distinct clusters according to their C-, Si-, and Ti-isotopic compositions. The isotopic diversity of the grains and the clustering of their isotopic compositions imply distinct and multiple stellar sources. The C- and N-isotopic compositions of most grains are consistent with H-burning in the CNO cycle. These and s-process Kr, Xe, Ba, and Nd suggest asymptotic giant branch (AGB) or Wolf-Rayet stars as likely sources for the grains, but existing models of nucleosynthesis in these stellar sites fail to account in detail for all the observed isotopic compositions. Special problems are posed by grains with C-12/C-13 less than 10 and almost normal and heavy N-isotopic compositions. Also the Si- and Ti-isotopic compositions, with excesses in Si-29 and Si-30 relative to Si-28 and excesses in all Ti isotopes relative to Ti-48, do not precisely conform with the compositions predicted for slow neutron capture. Additional theoretical efforts are needed to achieve an understanding of the isotopic composition of the SiC grains and their stellar sources.

Characterization of SiGe thin films using a laboratory X-ray instrument

PubMed Central

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-01-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation. PMID:24046495

Characterization of SiGe thin films using a laboratory X-ray instrument.

PubMed

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-08-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

PubMed

Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

2014-04-01

Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates

NASA Astrophysics Data System (ADS)

Redwing, Joan M.; Dilts, Sarah M.; Lew, Kok-Keong; Cranmer, Alexana E.; Mohney, Suzanne E.

2005-11-01

The fabrication of high density arrays of semiconductor nanowires is of interest for nanoscale electronics, chemical and biological sensing and energy conversion applications. We have investigated the synthesis, intentional doping and electrical characterization of Si and Ge nanowires grown by the vapor-liquid-solid (VLS) method in nanoporous alumina membranes. Nanoporous membranes provide a convenient platform for nanowire growth and processing, enabling control of wire diameter via pore size and the integration of contact metals for electrical testing. For VLS growth in nanoporous materials, reduced pressures and temperatures are required in order to promote the diffusion of reactants into the pore without premature decomposition on the membrane surface or pore walls. The effect of growth conditions on the growth rate of Si and Ge nanowires from SiH 4 and GeH 4 sources, respectively, was investigated and compared. In both cases, the measured activation energies for nanowire growth were substantially lower than activation energies typically reported for Si and Ge thin film deposition under similar growth conditions, suggesting that gold plays a catalytic role in the VLS growth process. Intentionally doped SiNW arrays were also prepared using trimethylboron (TMB) and phosphine (PH 3) as p-type and n-type dopant sources, respectively. Nanowire resistivities were calculated from plots of the array resistance as a function of nanowire length. A decrease in resistivity was observed for both n-type and p-type doped SiNW arrays compared to those grown without the addition of a dopant source.

Submillimeter array observations of NGC 2264-C: molecular outflows and driving sources

NASA Astrophysics Data System (ADS)

Cunningham, Nichol; Lumsden, Stuart L.; Cyganowski, Claudia J.; Maud, Luke T.; Purcell, Cormac

2016-05-01

We present 1.3 mm Submillimeter Array (SMA) observations at ˜3 arcsec resolution towards the brightest section of the intermediate/massive star-forming cluster NGC 2264-C. The millimetre continuum emission reveals ten 1.3 mm continuum peaks, of which four are new detections. The observed frequency range includes the known molecular jet/outflow tracer SiO (5-4), thus providing the first high-resolution observations of SiO towards NGC 2264-C. We also detect molecular lines of 12 additional species towards this region, including CH3CN, CH3OH, SO, H2CO, DCN, HC3N, and 12CO. The SiO (5-4) emission reveals the presence of two collimated, high-velocity (up to 30 km s-1 with respect to the systemic velocity) bipolar outflows in NGC 2264-C. In addition, the outflows are traced by emission from 12CO, SO, H2CO, and CH3OH. We find an evolutionary spread between cores residing in the same parent cloud. The two unambiguous outflows are driven by the brightest mm continuum cores, which are IR-dark, molecular line weak, and likely the youngest cores in the region. Furthermore, towards the Red MSX Source AFGL 989-IRS1, the IR-bright and most evolved source in NGC 2264-C, we observe no molecular outflow emission. A molecular line rich ridge feature, with no obvious directly associated continuum source, lies on the edge of a low-density cavity and may be formed from a wind driven by AFGL 989-IRS1. In addition, 229 GHz class I maser emission is detected towards this feature.

An alternative route for the synthesis of silicon nanowires via porous anodic alumina masks

PubMed Central

2011-01-01

Amorphous Si nanowires have been directly synthesized by a thermal processing of Si substrates. This method involves the deposition of an anodic aluminum oxide mask on a crystalline Si (100) substrate. Fe, Au, and Pt thin films with thicknesses of ca. 30 nm deposited on the anodic aluminum oxide-Si substrates have been used as catalysts. During the thermal treatment of the samples, thin films of the metal catalysts are transformed in small nanoparticles incorporated within the pore structure of the anodic aluminum oxide mask, directly in contact with the Si substrate. These homogeneously distributed metal nanoparticles are responsible for the growth of Si nanowires with regular diameter by a simple heating process at 800°C in an Ar-H2 atmosphere and without an additional Si source. The synthesized Si nanowires have been characterized by field emission scanning electron microscopy, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman. PMID:21849077

New production systems at ISOLDE

NASA Astrophysics Data System (ADS)

Hagebø, E.; Hoff, P.; Jonsson, O. C.; Kugler, E.; Omtvedt, J. P.; Ravn, H. L.; Steffensen, K.

1992-08-01

New target systems for the ISOLDE on-line mass separator facility are presented. Targets of carbides, metal/graphite mixtures, foils of refractory metals, molten metals and oxides have been tested. Beams of high intensity of neutron-rich isotopes of a large number of elements are obtained from a uranium carbide target with a hot plasma-discharge ion source. A target of ZrO 2 has been shown to provide high intensity beams of neutron-deficient isotopes of Mn, Cu, Zn, Ga, Ge, As, Se, Br, Kr and Rb, while a SiC target with a hot plasma ion source gives intense beams of radioactive isotopes of a number of light elements. All these systems are rather chemically unselective. Chemically selective performance has been obtained for several systems, i.e.: the production of neutron-deficient Au from ( 3He, pχn) reactions on a Pt/graphite target with a hot plasma ion source; the production of neutron-deficient Lu and LuF + and Hf and HfF 3+ from a Ta-foil target with a hot plasma ion source under CF 4 addition; the production of neutron-deficient Sr as SrF + and Y as YF 2+ form a Nb-foil target with a W surface ionizer under CF 4 addition; the production of neutron-deficient Se as COSe + from a ZrO 2 target with a hot plasma ion source under O 2 addition; and the production of radioactive F from a SiC target with a hot plasma ion source operating in Al vapour.

Novel Alleviation Mechanisms of Aluminum Phytotoxicity via Released Biosilicon from Rice Straw-Derived Biochars

PubMed Central

Qian, Linbo; Chen, Baoliang; Chen, Mengfang

2016-01-01

Replacing biosilicon and biocarbon in soil via biochar amendment is a novel approach for soil amelioration and pollution remediation. The unique roles of silicon (Si)-rich biochar in aluminum (Al) phytotoxicity alleviation have not been discovered. In this study, the alleviation of Al phytotoxicity to wheat plants (root tips cell death) by biochars fabricated from rice straw pyrolyzed at 400 and 700 °C (RS400 and RS700) and the feedstock (RS100) were studied using a slurry system containing typical acidic soils for a 15-day exposure experiment. The distributions of Al and Si in the slurry solution, soil and plant root tissue were monitored by staining methods, chemical extractions and SEM-EDS observations. We found that the biological sourced silicon in biochars served dual roles in Al phytotoxicity alleviation in acidic soil slurry. On one hand, the Si particles reduced the amount of soil exchangeable Al and prevented the migration of Al to the plant. More importantly, the Si released from biochars synchronously absorbed by the plants and coordinated with Al to form Al-Si compounds in the epidermis of wheat roots, which is a new mechanism for Al phytotoxicity alleviation in acidic soil slurry by biochar amendment. In addition, the steady release of Si from the rice straw-derived biochars was a sustainable Si source for aluminosilicate reconstruction in acidic soil. PMID:27385598

Novel Alleviation Mechanisms of Aluminum Phytotoxicity via Released Biosilicon from Rice Straw-Derived Biochars

NASA Astrophysics Data System (ADS)

Qian, Linbo; Chen, Baoliang; Chen, Mengfang

2016-07-01

Replacing biosilicon and biocarbon in soil via biochar amendment is a novel approach for soil amelioration and pollution remediation. The unique roles of silicon (Si)-rich biochar in aluminum (Al) phytotoxicity alleviation have not been discovered. In this study, the alleviation of Al phytotoxicity to wheat plants (root tips cell death) by biochars fabricated from rice straw pyrolyzed at 400 and 700 °C (RS400 and RS700) and the feedstock (RS100) were studied using a slurry system containing typical acidic soils for a 15-day exposure experiment. The distributions of Al and Si in the slurry solution, soil and plant root tissue were monitored by staining methods, chemical extractions and SEM-EDS observations. We found that the biological sourced silicon in biochars served dual roles in Al phytotoxicity alleviation in acidic soil slurry. On one hand, the Si particles reduced the amount of soil exchangeable Al and prevented the migration of Al to the plant. More importantly, the Si released from biochars synchronously absorbed by the plants and coordinated with Al to form Al-Si compounds in the epidermis of wheat roots, which is a new mechanism for Al phytotoxicity alleviation in acidic soil slurry by biochar amendment. In addition, the steady release of Si from the rice straw-derived biochars was a sustainable Si source for aluminosilicate reconstruction in acidic soil.

Simulated nutrient dissolution of Asian aerosols in various atmospheric waters: Potential links to marine primary productivity

NASA Astrophysics Data System (ADS)

Wang, Lingyan; Bi, Yanfeng; Zhang, Guosen; Liu, Sumei; Zhang, Jing; Xu, Zhaomeng; Ren, Jingling; Zhang, Guiling

2017-09-01

To probe the bioavailability and environmental mobility of aerosol nutrient elements (N, P, Si) in atmospheric water (rainwater, cloud and fog droplets), ten total suspended particulate (TSP) samples were collected at Fulong Mountain, Qingdao from prevailing air mass trajectory sources during four seasons. Then, a high time-resolution leaching experiment with simulated non-acidic atmospheric water (non-AAW, Milli-Q water, pH 5.5) and subsequently acidic atmospheric water (AAW, hydrochloric acid solution, pH 2) was performed. We found that regardless of the season or source, a monotonous decreasing pattern was observed in the dissolution of N, P and Si compounds in aerosols reacted with non-AAW, and the accumulated dissolved curves of P and Si fit a first-order kinetic model. No additional NO3- + NO2- dissolved out, while a small amount of NH4+ in Asian dust (AD) samples was released in AAW. The similar dissolution behaviour of P and Si from non-AAW to AAW can be explained by the Transition State Theory. The sources of aerosols related to various minerals were the natural reasons that affected the amounts of bioavailable phosphorus and silicon in aerosols (i.e., solubility), which can be explained by the dissolution rate constant of P and Si in non-AAW with lower values in mineral aerosols. The acid/particle ratio and particle/liquid ratio also have a large effect on the solubility of P and Si, which was implied by Pearson correlation analysis. Acid processing of aerosols may have great significance for marine areas with limited P and Si and post-acidification release increases of 1.1-10-fold for phosphorus and 1.2-29-fold for silicon. The decreasing mole ratio of P and Si in AAW indicates the possibility of shifting from a Si-limit to a P-limit in aerosols in the ocean, which promotes the growth of diatoms prior to other algal species.

Somatosensory responses in normal aging, mild cognitive impairment, and Alzheimer's disease.

PubMed

Stephen, Julia M; Montaño, Rebecca; Donahue, Christopher H; Adair, John C; Knoefel, Janice; Qualls, Clifford; Hart, Blaine; Ranken, Doug; Aine, Cheryl J

2010-02-01

As a part of a larger study of normal aging and Alzheimer's disease (AD), which included patients with mild cognitive impairment (MCI), we investigated the response to median nerve stimulation in primary and secondary somatosensory areas. We hypothesized that the somatosensory response would be relatively spared given the reported late involvement of sensory areas in the progression of AD. We applied brief pulses of electric current to left and right median nerves to test the somatosensory response in normal elderly (NE), MCI, and AD. MEG responses were measured and were analyzed with a semi-automated source localization algorithm to characterize source locations and timecourses. We found an overall difference in the amplitude of the response of the primary somatosensory source (SI) based on diagnosis. Across the first three peaks of the SI response, the MCI patients exhibited a larger amplitude response than the NE and AD groups (P < 0.03). Additional relationships between neuropsychological measures and SI amplitude were also determined. There was no significant difference in amplitude for the contralateral secondary somatosensory source across diagnostic category. These results suggest that somatosensory cortex is affected early in the progression of AD and may have some consequence on behavioral and functional measures.

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

NASA Astrophysics Data System (ADS)

Yasutake, Nobuaki; Azuma, Atsushi; Ishida, Tatsuya; Ohuchi, Kazuya; Aoki, Nobutoshi; Kusunoki, Naoki; Mori, Shinji; Mizushima, Ichiro; Morooka, Tetsu; Kawanaka, Shigeru; Toyoshima, Yoshiaki

2007-11-01

A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 μA/μm at ∣ Vdd∣ of 0.9 V and Ioff of 100 nA/μm (552 μA/μm at ∣ Vdd∣ of 1.0 V). Furthermore, by combining with Vdd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation.

Effect of pH and added slag on the extractability of Si in two Si-deficient sugarcane soils.

PubMed

Haynes, Richard J; Zhou, Ya-Feng

2018-02-01

The effects of increasing pH on the adsorption and extractability of Si in two Si-deficient Australian sugarcane soils was investigated and the effects of increasing rates of fertilizer Si (as blast furnace slag) on pH and extractable Si were also examined. Equilibrium studies showed that maximum adsorption of Si by the two soils occurred in the pH range 9-10. When soil pH was increased from 5.0 to 6.5, subsequent adsorption of Si by the two soils, as measured by adsorption isotherms, increased. After incubation with progressive lime additions there was a decline in CaCl 2 - extractable Si due to its increased adsorption and an increase in acid (H 2 SO 4 - and acetic acid)-extractable (mainly adsorbed) Si. The increase in acid extractable Si was greater than the decrease in CaCl 2 - extractable Si suggesting a supply from an additional source. Alkali (Na 2 CO 3 and Tiron)-extractable Si decreased greatly with increasing pH suggesting dissolution of the amorphous (mainly biogenic) pool of silica was occurring with increasing pH. When increasing rates of slag were incubated with the soils, pH, CaCl 2 - and acid- extractable Si were all increased because upon dissolution slags release both silicic acid and OH - ions. There was, therefore, a positive relationship between extractable Si and soil pH. However, Na 2 CO 3 - and Tiron-extractable Si decreased with increasing slag rates (and increasing soil pH) suggesting dissolution of the biogenic pool of soil Si. It was concluded that future research needs to examine the desorption potential of adsorbed Si and the effects of liming on dissolution of the biogenic pool of soil silica under field conditions. Copyright © 2017 Elsevier Ltd. All rights reserved.

The Ge/Si ratio quantifies the role of recycled crust in the generation of MORBs

NASA Astrophysics Data System (ADS)

Yang, S.; Humayun, M.; Salters, V. J. M.

2017-12-01

Global MORBs cover a broad spectrum of incompatible element compositions from depleted [(La/Sm)N < 0.5] to enriched [(La/Sm)N 0.5-2]. Two explanations for the origin of the enriched mantle sources of E-MORBs from ridge segments not associated with plumes have been proposed: (1) re-fertilization of Depleted Mantle (DM) by infiltration of low-degree melts (<1%) from subducted crust, or (2) by entrainment of solid recycled crust in the Depleted Mantle (DM). Whether pyroxenite contributes melt to E-MORB can be resolved by chemically distinguishing between partial melts of a peridotite source vs. those of a lithologically heterogeneous source of peridotite and pyroxenite. In this study, we exploit the mineralogical preferences of elements like Ge and Si to distinguish melts formed from peridotite or pyroxenite. In-situ analyses of 60 elements in 319 MORB glasses from north (10-36 °N) Mid-Atlantic Ridge (MAR) and Mid-Cayman Rise were performed by LA-ICP-MS. Use of a large laser spot size (150 μm) and high repetition rate (50 Hz) yielded a low blank correction (< 5%) for Ge, and high external precision for the Ge/Si ratio (± 3%, 1σ) in MORB glasses. E-MORBs (6.4±0.2) are systematically lower in Ge/Si than D-MORBs (7.2±0.2), while N-MORBs fall in between and are not fully resolved from either D- or E-MORB. Based on experimental Ds, partial melts from pyroxenites are always lower in Ge/Si than partial melts from peridotites because Ge is more compatible in garnet and clinopyroxene than in olivine [1]. E-MORBs also have lower Sc abundances (37 vs. 43 ppm) but slightly higher Fe/Mn ratios (55 vs. 53) than D-MORBs, and lower La/Nb (0.6 vs. 1-2) and Sr/Nb (<20 vs. >40), consistent with addition of 27% pyroxenite-derived melts to a D-MORB-like composition. This requires that the amount of solid recycled garnet pyroxenite in a peridotite source is 12%. The Ge/Si ratio is a new tool that effectively discriminates between melts derived from peridotite sources and melts derived from pyroxenite sources. Extrapolating from the correlation between K2O/TiO2 and Ge/Si established in this study, we estimated the distribution of pyroxenite, solid recycled crust, in the mantle sources of global MORB segments, which reveals a mode of 3-4% pyroxenite in the MORB source. [1] Davis et al., 2013

Silicon Isotope Geochemistry of Ocean Island Basalts: Search for Deep Mantle Heterogeneities and Evidence for Recycled Altered Oceanic Crust

NASA Astrophysics Data System (ADS)

Pringle, E. A.; Savage, P. S.; Jackson, M. G.; Moreira, M. A.; Day, J. M.; Moynier, F.

2014-12-01

Analyses of Ocean Island Basalts (OIB) have shown that the Earth's mantle contains isotopically distinct components, but debate about the degree and cause of variability persists. The study of silicon (Si) isotopes in OIBs has the potential to elucidate mantle heterogeneities. Relatively large (~several per mil) Si isotopic fractionation occurs in low-temperature environments during precipitation from dissolved Si, where the precipitate is preferentially enriched in the lighter isotopes [1], but only a limited range (~tenths of a per mil) of Si isotope fractionation has been observed due to high-temperature igneous processes [2]. Therefore, Si isotopes may be useful as tracers for the presence of crustal material in OIB source regions in a manner similar to more conventional stable isotope systems, such as oxygen. Here we present the first comprehensive suite of high-precision Si isotopic data obtained by MC-ICP-MS for a diverse set of OIBs representing the EM-1, EM-2, and HIMU mantle components. In general, the Si isotopic compositions of OIBs analyzed here are agreement with previous estimates for Bulk Silicate Earth (BSE). However, small systematic variations are present; the HIMU end-member Mangaia and HIMU-type Cape Verde island São Nicolau are enriched in the light isotopes of Si (δ30Si = -0.37 ± 0.06‰ and δ30Si = -0.39 ± 0.04‰, respectively; errors are 2sd), with compositions intermediary between Mid Ocean Ridge Basalts and chondritic values. Additionally, Iceland samples from volcanic complexes in the Northern Rift Zone show similar Si isotope compositions (on average, δ30Si = -0.40 ± 0.06‰). In contrast, the δ30Si averages of the EM-1 end-member Pitcairn (-0.28 ± 0.07‰), the EM-2 end-member Samoa (-0.31 ± 0.07‰) and other OIB localities do not show any significant difference from previous estimates for the δ30Si value of BSE [3]. The Si isotopic variability in some HIMU-type and Icelandic OIBs most likely reflects the incorporation of recycled altered oceanic crust in the plume source. However, the sampling of a primitive reservoir enriched in the light isotopes of Si, as suggested by [4], cannot be ruled out as a potential source of Si isotope variations in OIBs. References: [1] Ziegler et al., GCA 2005 [2] Savage et al., GCA 2011 [3] Savage et al., EPSL 2010 [4] Huang et al., GCA 2014

An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth

NASA Astrophysics Data System (ADS)

Scarinci, F.; Casella, A.; Lagomarsino, S.; Fiordelisi, M.; Strappaveccia, P.; Gambacorti, N.; Grimaldi, M. G.; Xue, LiYing

1996-08-01

In this paper we present two kind of sources used in Si MBE growth: a Si source where an electron beam is electrostatically deflected onto a Si rod and a high temperature B source to be used for p-doping. Both sources have been designed and constructed at IESS. The Si source is constituted of a Si rod mounted on a 3/4″ flange with high-voltage connector. A W filament held at high voltage (up to 2000 V) is heated by direct current. Electrons from the filament are electrostatically focused onto the Si rod which is grounded. This mounting allows a minimum heating dispersion and no contamination, because the only hot objects are the Si rod and the W filament which is mounted in such a way that it cannot see the substrate. Growth rates of 10 Å/min on a substrate at 20 cm from the source have been measured. Auger and LEED have shown no contamination. The B source is constituted of a graphite block heated by direct current. A pyrolitic graphite crucible put in the graphite heater contains the elemental B. The cell is water cooled and contains Ta screens to avoid heat dispersion. It has been tested up to a temperature of 1700°C. P-doped Si 1- xGe x layers have been grown and B concentration has been measured by SIMS. A good control and reproducibility has been attained.

Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

NASA Astrophysics Data System (ADS)

Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

2016-01-01

Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite with a solution-based approach to immobilize a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. The reactants used were the salt solution, NaAlO2, and either Si(OC2H5)4 or Ge(OC2H5)4. Additionally, seven different glass sintering aids (at loadings of 5 mass%) were evaluated as sintering aids for consolidating the as-made powders using a cold-press-and-sinter technique. This process of using alkoxide additives for the Group IV component can be used to produce large quantities of sodalite at near-room temperature as compared to a method where colloidal silica was used as the silica source. However, the small particle sizes inhibited densification during heat treatments.

Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite to immobilize a mixed chloride salt using solution-based techniques. Sodalites were made using different Group IV contributions from either Si(OC2H5)4 or Ge(OC2H5)4, NaAlO2, and a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. Additionally, 6 glass binders at low loadings of 5 mass% were evaluated as sintering aids for the consolidation process. The approach of using the organic Group IV additives can be used to produce large quantities of sodalite at room temperature and shows promise overmore » a method where colloidal silica is used as the silica source. However, the small particle sizes inhibited densification during pressure-less sintering.« less

Effect of hydrogen radical on decomposition of chlorosilane source gases

NASA Astrophysics Data System (ADS)

Sumiya, Masatomo; Akizuki, Tomohiro; Itaka, Kenji; Kubota, Makoto; Tsubouchi, Kenta; Ishigaki, Takamasa; Koinuma, Hideomi

2013-06-01

The effect of hydrogen radical on production of Si from chlorosilane sources has been studied. We used hydrogen radical generated from pulsed thermal plasma to decompose SiHCl3 and SiCl4. Hydrogen radical was effective for lowering the temperature to produce Si from SiHCl3. SiCl4 source, which was chemically stable and by-product in Siemens process, was decomposed effectively by hydrogen radical. The decomposition of SiCl4 was consistent with the thermo-dynamical calculation predicting that the use of hydrogen radical could drastically enhance the yield of Si production rather than case of H2 gas.

Fluorescent carbon dots as an efficient siRNA nanocarrier for its interference therapy in gastric cancer cells.

PubMed

Wang, Qing; Zhang, Chunlei; Shen, Guangxia; Liu, Huiyang; Fu, Hualin; Cui, Daxiang

2014-12-30

Fluorescent carbon dots (Cdots) have attracted increasing attention due to their potential applications in sensing, catalysis, and biomedicine. Currently, intensive research has been concentrated on the synthesis and imaging-guided therapy of these benign photoluminescent materials. Meanwhile, Cdots have been explored as nonviral vector for nucleic acid or drug delivery by chemical modification on purpose. We have developed a microwave assisted one-step synthesis of Cdots with citric acid as carbon source and tryptophan (Trp) as both nitrogen source and passivation agent. The Cdots with uniform size show superior water solubility, excellent biocompatibility, and high quantum yield. Afterwards, the PEI (polyethylenimine)-adsorbed Cdots nanoparticles (Cdots@PEI) were applied to deliver Survivin siRNA into human gastric cancer cell line MGC-803. The results have confirmed the nanocarrier exhibited excellent biocompatibility and a significant increase in cellular delivery of siRNA, inducing efficient knockdown for Survivin protein to 6.1%. In addition, PEI@Cdots complexes mediated Survivin silencing, the arrested cell cycle progression in G1 phase as well as cell apoptosis was observed. The Cdots-based and PEI-adsorbed complexes both as imaging agents and siRNA nanocarriers have been developed for Survivin siRNA delivery. And the results indicate that Cdots-based nanocarriers could be utilized in a broad range of siRNA delivery systems for cancer therapy.

Experimental Investigations on the effect of Additive on the Tensile Properties of Fiber Glass Fabric Lamina

NASA Astrophysics Data System (ADS)

Nava Sai Divya, A.; Raghu Kumar, B., Dr; Lakshmi Narayana, G., Dr

2017-09-01

The main objective of this work is to investigate the effect of additives on tensile behaviour of fiber glass fabric at lamina level to explore an alternative skin material for the outer body of aerospace applications and machines. This experimental work investigates the effect of silica concentration in epoxy resin lapox L-12 on the tensile properties of glass fabric lamina of 4H-satin weave having 3.6 mm thickness. The lamina was prepared by using hand lay-up method and tests were conducted on it. Various tensile properties values obtained from experimentation were compared for four glass fiber lamina composites fabricated by adding the silica powder to resin bath. The effect of variations in silica concentration (0% SiO2, 5% SiO2, 10% SiO2 and 15% SiO2) on the tensile properties of prepared material revealed that maximum stiffness was obtained at 15% and yield strength at 10% SiO2 concentration in glass fiber lamina. Increasing the silica concentration beyond 10% had led to deterioration in the material properties. The experimentation that was carried out on test specimen was reasonably successful as the effect of silica powder as an additive in glass fiber lamina enhanced the mechanical properties up to certain limit. The underpinning microscopic behaviour at the source of these observations will be investigated in a follow up work.

A feasibility study for the application of seismic interferometry by multidimensional deconvolution for lithospheric-scale imaging

NASA Astrophysics Data System (ADS)

Ruigrok, Elmer; van der Neut, Joost; Djikpesse, Hugues; Chen, Chin-Wu; Wapenaar, Kees

2010-05-01

Active-source surveys are widely used for the delineation of hydrocarbon accumulations. Most source and receiver configurations are designed to illuminate the first 5 km of the earth. For a deep understanding of the evolution of the crust, much larger depths need to be illuminated. The use of large-scale active surveys is feasible, but rather costly. As an alternative, we use passive acquisition configurations, aiming at detecting responses from distant earthquakes, in combination with seismic interferometry (SI). SI refers to the principle of generating new seismic responses by combining seismic observations at different receiver locations. We apply SI to the earthquake responses to obtain responses as if there was a source at each receiver position in the receiver array. These responses are subsequently migrated to obtain an image of the lithosphere. Conventionally, SI is applied by a crosscorrelation of responses. Recently, an alternative implementation was proposed as SI by multidimensional deconvolution (MDD) (Wapenaar et al. 2008). SI by MDD compensates both for the source-sampling and the source wavelet irregularities. Another advantage is that the MDD relation also holds for media with severe anelastic losses. A severe restriction though for the implementation of MDD was the need to estimate responses without free-surface interaction, from the earthquake responses. To mitigate this restriction, Groenestijn en Verschuur (2009) proposed to introduce the incident wavefield as an additional unknown in the inversion process. As an alternative solution, van der Neut et al. (2010) showed that the required wavefield separation may be implemented after a crosscorrelation step. These last two approaches facilitate the application of MDD for lithospheric-scale imaging. In this work, we study the feasibility for the implementation of MDD when considering teleseismic wavefields. We address specific problems for teleseismic wavefields, such as long and complicated source wavelets, source-side reverberations and illumination gaps. We exemplify the feasibility of SI by MDD on synthetic data, based on field data from the Laramie and the POLARIS-MIT array. van Groenestijn, G.J.A. & Verschuur, D.J., 2009. Estimation of primaries by sparse inversion from passive seismic data, Expanded abstracts, 1597-1601, SEG. van der Neut, J.R, Ruigrok, E.N., Draganov, D.S., & Wapenaar, K., 2010. Retrieving the earth's reflection response by multi-dimensional deconvolution of ambient seismic noise, Extended abstracts, submitted, EAGE. Wapenaar, K., van der Neut, J., & Ruigrok, E.N., 2008. Passive seismic interferometry by multidimensional deconvolution, Geophysics, 75, A51-A56.

Kinetic Investigations of SiMn Slags From Different Mn Sources

NASA Astrophysics Data System (ADS)

Kim, Pyunghwa Peace; Tangstad, Merete

2018-06-01

The kinetics of MnO and SiO2 reduction were investigated for Silicomanganese (SiMn) slags using a Thermogravimetric analysis (TGA) between 1773 K and 1923 K (1500 °C and 1650 °C) under CO atmospheric pressure. The charge materials were based on Assmang ore and HC FeMn Slag. Rate models for MnO and SiO2 reduction were applied to describe the metal-producing rates, as shown by the following equations: r_{MnO} = k_{MnO} × A × ( {a_{MnO} - {a_{Mn} }/{K_{T }}} ) r_{{{SiO}2 }} = k_{SiO2} × A × ( {a_{{{SiO}2 }} - {a_{Si} }/{K_{T }}} ). The results show that the choice of raw materials in the charge considerably affected the reduction rate of MnO and SiO2. The highest reduction rate was found to be from charges using HC FeMn slag. The difference in the driving forces was insignificant among the SiMn slags, and the similar slag viscosities could not explain the different reduction rates. Instead, the difference is attributed to small amounts of sulfur and the amount of iron in the charge. In addition, the rate models were applicable to describe the reduction of MnO and SiO2 in SiMn slags.

Noise performance limits of advanced x-ray imagers employing poly-Si-based active pixel architectures

NASA Astrophysics Data System (ADS)

Koniczek, Martin; El-Mohri, Youcef; Antonuk, Larry E.; Liang, Albert; Zhao, Qihua; Jiang, Hao

2011-03-01

A decade after the clinical introduction of active matrix, flat-panel imagers (AMFPIs), the performance of this technology continues to be limited by the relatively large additive electronic noise of these systems - resulting in significant loss of detective quantum efficiency (DQE) under conditions of low exposure or high spatial frequencies. An increasingly promising approach for overcoming such limitations involves the incorporation of in-pixel amplification circuits, referred to as active pixel architectures (AP) - based on low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). In this study, a methodology for theoretically examining the limiting noise and DQE performance of circuits employing 1-stage in-pixel amplification is presented. This methodology involves sophisticated SPICE circuit simulations along with cascaded systems modeling. In these simulations, a device model based on the RPI poly-Si TFT model is used with additional controlled current sources corresponding to thermal and flicker (1/f) noise. From measurements of transfer and output characteristics (as well as current noise densities) performed upon individual, representative, poly-Si TFTs test devices, model parameters suitable for these simulations are extracted. The input stimuli and operating-point-dependent scaling of the current sources are derived from the measured current noise densities (for flicker noise), or from fundamental equations (for thermal noise). Noise parameters obtained from the simulations, along with other parametric information, is input to a cascaded systems model of an AP imager design to provide estimates of DQE performance. In this paper, this method of combining circuit simulations and cascaded systems analysis to predict the lower limits on additive noise (and upper limits on DQE) for large area AP imagers with signal levels representative of those generated at fluoroscopic exposures is described, and initial results are reported.

Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

NASA Astrophysics Data System (ADS)

Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

2015-01-01

A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

Somatosensory responses in normal aging, mild cognitive impairment, and Alzheimer’s disease

PubMed Central

Montaño, Rebecca; Donahue, Christopher H.; Adair, John C.; Knoefel, Janice; Qualls, Clifford; Hart, Blaine; Ranken, Doug; Aine, Cheryl J.

2010-01-01

As a part of a larger study of normal aging and Alzheimer’s disease (AD), which included patients with mild cognitive impairment (MCI), we investigated the response to median nerve stimulation in primary and secondary somatosensory areas. We hypothesized that the somatosensory response would be relatively spared given the reported late involvement of sensory areas in the progression of AD. We applied brief pulses of electric current to left and right median nerves to test the somato-sensory response in normal elderly (NE), MCI, and AD. MEG responses were measured and were analyzed with a semi-automated source localization algorithm to characterize source locations and timecourses. We found an overall difference in the amplitude of the response of the primary somatosensory source (SI) based on diagnosis. Across the first three peaks of the SI response, the MCI patients exhibited a larger amplitude response than the NE and AD groups (P < 0.03). Additional relationships between neuropsychological measures and SI amplitude were also determined. There was no significant difference in amplitude for the contralateral secondary somatosensory source across diagnostic category. These results suggest that somatosensory cortex is affected early in the progression of AD and may have some consequence on behavioral and functional measures. PMID:20013008

Effects of half-wave and full-wave power source on the anodic oxidation process on AZ91D magnesium alloy

NASA Astrophysics Data System (ADS)

Wang, Ximei; Zhu, Liqun; Li, Weiping; Liu, Huicong; Li, Yihong

2009-03-01

Anodic films have been prepared on the AZ91D magnesium alloys in 1 mol/L Na 2SiO 3 with 10 vol.% silica sol addition under the constant voltage of 60 V at room temperature by half-wave and full-wave power sources. The weight of the anodic films has been scaled by analytical balance, and the thickness has been measured by eddy current instrument. The surface morphologies, chemical composition and structure of the anodic films have been characterized by scanning electron microscopy (SEM), energy dispersion spectrometry (EDS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the thickness and weight of the anodic films formed by the two power sources both increase with the anodizing time, and the films anodized by full-wave power source grow faster than that by half-wave one. Furthermore, we have fitted polynomial to the scattered data of the weight and thickness in a least-squares sense with MATLAB, which could express the growth process of the anodic films sufficiently. The full-wave power source is inclined to accelerate the growth of the anodic films, and the half-wave one is mainly contributed to the uniformity and fineness of the films. The anodic film consists of crystalline Mg 2SiO 4 and amorphous SiO 2.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Ê/hr for sputtered carbon and 40 Ê/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors.

PubMed

Jiang, Jingxin; Furuta, Mamoru

2018-08-01

This study investigated the effect of fluorine (F) diffusion from a fluorinated siliconnitride passivation layer (SiNX:F-Pa) into amorphous-InGaZnO-based thin-film transistors (a-IGZO TFTs). The results of thermal desorption spectroscopy and secondary ion mass spectrometry revealed that F was introduced into the SiOX etch-stopper layer (SiOX-ES) during the deposition of a SiNX:F-Pa, and did not originate from desorption of Si-F bonds; and that long annealing times enhanced F diffusion from the SiOX-ES layer to the a-IGZO channel. Improvements to the performance and threshold-voltage (Vth) negative shift of IGZO TFTs were achieved when annealing time increased from 1 h to 3 h; and capacitance-voltage results indicated that F acted as a shallow donor near the source side in a-IGZO and induced the negative Vth shift. In addition, it was found that when IGZO TFTs with SiNX:F-Pa were annealed 4 h, a low-resistance region was formed at the backchannel of the TFT, leading to a drastic negative Vth shift.

Reducing contralateral SI activity reveals hindlimb receptive fields in the SI forelimb-stump representation of neonatally amputated rats.

PubMed

Pluto, Charles P; Chiaia, Nicolas L; Rhoades, Robert W; Lane, Richard D

2005-09-01

In adult rats that sustained forelimb amputation on the day of birth, >30% of multiunit recording sites in the forelimb-stump representation of primary somatosensory cortex (SI) also respond to cutaneous hindlimb stimulation when cortical GABA(A+B) receptors are blocked (GRB). This study examined whether hindlimb receptive fields could also be revealed in forelimb-stump sites by reducing one known source of excitatory input to SI GABAergic neurons, the contralateral SI cortex. Corpus callosum projection neurons connect homotopic SI regions, making excitatory contacts onto pyramidal cells and interneurons. Thus in addition to providing monosynaptic excitation in SI, callosal fibers can produce disynaptic inhibition through excitatory synapses with inhibitory interneurons. Based on the latter of these connections, we hypothesized that inactivating the contralateral (intact) SI forelimb region would "unmask" normally suppressed hindlimb responses by reducing the activity of SI GABAergic neurons. The SI forelimb-stump representation was first mapped under normal conditions and then during GRB to identify stump/hindlimb responsive sites. After GRB had dissipated, the contralateral (intact) SI forelimb region was mapped and reversibly inactivated with injections of 4% lidocaine, and selected forelimb-stump sites were retested. Contralateral SI inactivation revealed hindlimb responses in approximately 60% of sites that were stump/hindlimb responsive during GRB. These findings indicate that activity in the contralateral SI contributes to the suppression of reorganized hindlimb receptive fields in neonatally amputated rats.

Calcium addition at the Hubbard Brook Experimental Forest increases sugar storage, antioxidant activity and cold tolerance in native red spruce (Picea rubens)

Treesearch

Joshua M. Halman; Paul G. Schaberg; Gary J. Hawley; Christopher Eagar

2008-01-01

In fall (November 2005) and winter (February 2006), we collected current-year foliage of native red spruce (Picea rubens Sarg.) growing in a reference watershed and in a watershed treated in 1999 with wollastonite (CaSiO3, a slow-release calcium source) to simulate preindustrial soil calcium concentrations (Ca-addition...

Highly Loaded Fe-MCM-41 Materials: Synthesis and Reducibility Studies

PubMed Central

Mokhonoana, Malose P.; Coville, Neil J.

2009-01-01

Fe-MCM-41 materials were prepared by different methods. The Fe was both incorporated into the structure and formed crystallites attached to the silica. High Fe content MCM-41 (~16 wt%) with retention of mesoporosity and long-range order was achieved by a range of new synthetic methodologies: (i) by delaying the addition of Fe3+(aq) to the stirred synthesis gel by 2 h, (ii) by addition of Fe3+ precursor as a freshly-precipitated aqueous slurry, (iii) by exploiting a secondary synthesis with Si-MCM-41 as SiO2 source. For comparative purposes the MCM-41 was also prepared by incipient wetness impregnation (IWI). Although all these synthesis methods preserved mesoporosity and long-range order of the SiO2 matrix, the hydrothermally-fabricated Fe materials prepared via the secondary synthesis route has the most useful properties for exploitation as a catalyst, in terms of hydrothermal stability of the resulting support. Temperature-programmed reduction (TPR) studies revealed a three-peak reduction pattern for this material instead of the commonly observed two-peak reduction pattern. The three peaks showed variable intensity that related to the presence of two components: crystalline Fe2O3 and Fe embedded in the SiO2 matrix (on the basis of ESR studies). The role of secondary synthesis of Si-MCM-41 on the iron reducibility was also demonstrated in IWI of sec-Si-MCM-41.

New high-capacity, calcium-based sorbents, calcium silicate sorbents. Final report, 1993--August 31, 1994

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kenney, M.C.; Chiang, R.K.; Fillgrove, K.L.

1995-02-01

A search is being carried out for new calcium-based S0{sub 2} sorbents for induct injection. More specifically, a search is being carried out for induct injection calcium silicate sorbents that are highly cost effective. The objectives for the current year include the study of sorbents made from Ca(OH){sub 2}, from mixtures of Ca(OH){sub 2} and SiO{sub 2}, and from portland cement. They also include the study of sorbents made from model compounds. During this year, sorbents prepared from Ca(OH){sub 2} and from mixtures of Ca(OH){sub 2} and fumed SiO{sub 2} were investigated. The results show that very good SiO{sub 2}-modifiedmore » Ca(OH){sub 2} sorbents in which the Si-to-Ca reactant ratio is low can be prepared from Ca(OH){sub 2} and fumed SiO{sub 2}. Sorbents prepared from Ca(OH){sub 2} and natural SiO{sub 2} or natural SiO{sub 2} sources were also studied. The results obtained show that very good SiO{sub 2}-modified Ca(OH){sub 2} sorbents and calcium silicate hydrate sorbents, C-S-H sorbents, can be prepared from Ca(OH){sub 2} and diatomite, pumice or perlite, minerals that are readily available. In addition. sorbents prepared from Ca{sub 3}SiO{sub 5} and {beta}-Ca{sub 2}SiO{sub 4} and from mixtures of these compounds and SiO{sub 2} were studied. The results secured demonstrate that very good C-S-H rich sorbents can be prepared from these compounds and from mixtures of them with SiO{sub 2}. They also provide information useful for interpreting the cement sorbent results. Sorbents prepared from cement and from mixtures of cement and natural SiO{sub 2} or SiO{sub 2} sources were investigated as well. The results secured show that cement and mixtures of it with diatomite, pumice or perlite rapidly yield excellent sorbents with the proper reaction conditions.« less

Monitoring Observatinos of H2O and SiO Masers Toward Post-AGB Stars

NASA Astrophysics Data System (ADS)

Kim, Jaeheon; Cho, Se-Hyung; Yoon, Dong-Hwan

2016-12-01

We present the results of simultaneous monitoring observations of H_2O 6_{1,6}-5_{2,3} (22 GHz) and SiO J=1-0, 2-1, 3-2 maser lines (43, 86, 129 GHz) toward five post-AGB (candidate) stars, using the 21-m single-dish telescopes of the Korean VLBI Network. Depending on the target objects, 7 - 11 epochs of data were obtained. We detected both H_2O and SiO maser lines from four sources: OH16.1-0.3, OH38.10-0.13, OH65.5+1.3, and IRAS 19312+1950. We could not detect H_2O maser emission toward OH13.1+5.1 between the late OH/IR and post-AGB stage. The detected H_2O masers show typical double-peaked line profiles. The SiO masers from four sources, except IRAS 19312+1950, show the peaks around the stellar velocity as a single peak, whereas the SiO masers from IRAS 19312+1950 occur above the red peak of the H_2O maser. We analyzed the properties of detected maser lines, and investigated their evolutionary state through comparison with the full widths at zero power. The distribution of observed target sources was also investigated in the IRAS two-color diagram in relation with the evolutionary stage of post-AGB stars. From our analyses, the evolutionary sequence of observed sources is suggested as OH65.5+1.3 → OH13.1+5.1 → OH16.1-0.3 → OH38.10-0.13, except for IRAS 19312+1950. In addition, OH13.1+5.1 from which the H_2O maser has not been detected is suggested to be on the gateway toward the post-AGB stage. With respect to the enigmatic object, IRAS 19312+1950, we could not clearly figure out its nature. To properly explain the unusual phenomena of SiO and H_2O masers, it is essential to establish the relative locations and spatial distributions of two masers using VLBI technique. We also include the 1.2 - 160 μm spectral energy distribution using photometric data from the following surveys: 2MASS, WISE, MSX, IRAS, and AKARI (IRC and FIS). In addition, from the IRAS LRS spectra, we found that the depth of silicate absorption features shows significant variations depending on the evolutionary sequence, associated with the termination of AGB phase mass-loss.

Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using noval cyclopentadienyl-based erbium sources

NASA Technical Reports Server (NTRS)

Redwing, J. M.; Kuech, T. F.; Gordon, D. C.; Vaartstra, B. A.; Lau, S. S.

1994-01-01

Erbium-doped GaAS layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 10(exp 17) - 10(exp 18)/cu cm was achieved using a relatively low source temperature of 90 C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in 'as-grown' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er(+3) luminescence at 1.54 micrometers was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration is proposed to arise from the deep centers associated with Er which are responsible for a broad emission band near 0.90 micrometers present in the photoluminescence spectra of GaAs:Si, Er films.

CVD of SiC and AlN using cyclic organometallic precursors

NASA Technical Reports Server (NTRS)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grownmore » with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.« less

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

2017-03-01

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuits

NASA Astrophysics Data System (ADS)

Mhaisagar, Yogesh S.; Kawishwar, Renuka; Joshi, Bhavana N.; Mahajan, A. M.

2012-10-01

The porous silica low-k thin films were deposited by using Sol-gel spin coating technique. The tetraethylorthosilicate (TEOS) was used as a source of Si and the porogen Tween 80 was used for the introduction of porosity of the films. The chemical bondings of porous low-k SiO2 films have been realized by using Fourier transform infrared spectroscopy (FT-IR). The appearance of stretching, bending and rocking peaks at 1075.8, 967, 426 cm-1 respectively confirms the formation of Si-O-Si network. The Refractive index (RI) and thickness of the films were determined by using ellipsometer. Further, from RI the density and porosity of the films was estimated using standard formula. As from results it's seems that the density of the films reduces after the addition of Tween 80. The lowest value of films density after the addition of Tween 80 was found to be 1.27 g/cm3. The reduction in the film density results in increase of the porosity of films due to the removal of porogen during the curing. The increase in film porosity from 6% to 45% resulted in lower in the dielectric constant to 2.58.

Olivine and melt inclusion chemical constraints on the source of intracontinental basalts from the eastern North China Craton: Discrimination of contributions from the subducted Pacific slab

NASA Astrophysics Data System (ADS)

Li, Hong-Yan; Xu, Yi-Gang; Ryan, Jeffrey G.; Huang, Xiao-Long; Ren, Zhong-Yuan; Guo, Hua; Ning, Zhen-Guo

2016-04-01

Contributions from fluid and melt inputs from the subducting Pacific slab to the chemical makeup of intraplate basalts erupted on the eastern Eurasian continent have long been suggested but have not thus far been geochemically constrained. To attempt to address this question, we have investigated Cenozoic basaltic rocks from the western Shandong and Bohai Bay Basin, eastern North China Craton (NCC), which preserve coherent relationships among the chemistries of their melt inclusions, their hosting olivines and their bulk rock compositions. Three groups of samples are distinguished: (1) high-Si and (2) moderate-Si basalts (tholeiites, alkali basalts and basanites) which were erupted at ∼23-20 Ma, and (3) low-Si basalts (nephelinites) which were erupted at <9 Ma. The high-Si basalts have lower alkalies, CaO and FeOT contents, lower trace element concentrations, lower La/Yb, Sm/Yb and Ce/Pb but higher Ba/Th ratios, and lower εNd and εHf values than the low-Si basalts. The olivines in the high-Si basalts have higher Ni and lower Mn and Ca at a given Fo value than those crystallizing from peridotite melts, and their corresponding melt inclusions have lower CaO contents than peridotite melts, suggesting a garnet pyroxenitic source. The magmatic olivines from low-Si basalts have lower Ni but higher Mn at a given Fo value than that of the high-Si basalts, suggesting more olivine in its source. The olivine-hosted melt inclusions of the low-Si basalts have major elemental signatures different from melts of normal peridotitic or garnet pyroxenitic mantle sources, pointing to their derivation from a carbonated mantle source consisting of peridotite and garnet pyroxenite. We propose a model involving the differential melting of a subduction-modified mantle source to account for the generation of these three suites of basalts. Asthenospheric mantle beneath the eastern NCC, which entrains garnet pyroxenite with an EM1 isotopic signature, was metasomatized by carbonatitic melts from carbonated eclogite derived from subducted Pacific slab materials present in the deeper mantle. High degree melting of garnet pyroxenites from a shallower mantle source produced the early (∼23-20 Ma) higher-Si basalts. Mixing of these materials with deeper-sourced melts of carbonated mantle source produced the moderate-Si basalts. A thicker lithosphere after 9 Ma precluded melting of shallower garnet pyroxenites, so melts of the deeper carbonated mantle source are responsible for the low-Si basalts.

BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

NASA Astrophysics Data System (ADS)

Hara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka

2018-04-01

Thermal evaporation is a simple and rapid method to fabricate semiconducting BaSi2 films. In this study, to elucidate the BaSi2 formation mechanism, the microstructure of a BaSi2 epitaxial film fabricated by thermal evaporation has been investigated by transmission electron microscopy. The BaSi2 film is found to consist of three layers with different microstructural characteristics, which is well explained by assuming two stages of film deposition. In the first stage, BaSi2 forms through the diffusion of Ba atoms from the deposited Ba-rich film to the Si substrate while in the second stage, the mutual diffusion of Ba and Si atoms in the film leads to BaSi2 formation. On the basis of the BaSi2 formation mechanism, two issues are addressed. One is the as-yet unclarified reason for epitaxial growth. It is found important to quickly form BaSi2 in the first stage for the epitaxial growth of upper layers. The other issue is the high oxygen concentration in BaSi2 films around the BaSi2-Si interface. Two routes of oxygen incorporation, i.e., oxidation of the Si substrate surface and initially deposited Ba-rich layer by the residual gas, are identified. On the basis of this knowledge, oxygen concentration is decreased by reducing the holding time of the substrate at high temperatures and by premelting of the source. In addition, X-ray diffraction results show that the decrease in oxygen concentration can lead to an increased proportion of a-axis-oriented grains.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE PAGES

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; ...

2018-02-10

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32Si and low-background silicon dark matter detectors

NASA Astrophysics Data System (ADS)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32 Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that productionmore » of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, Youngmo; Park, Jiwoo; Sohn, Hyunchul

2018-01-01

Si1- x Ge x (:B) epitaxial layers were deposited by using reduced pressure chemical vapor deposition with SiH4, GeH4, and B2H6 source gases, and the dependences of the surface roughness of undoped Si1- x Ge x on the GeH4 flow rate and of Si1- x Ge x :B on the B2H6 flow rate were investigated. The root-mean-square (RMS) roughness value of the undoped Si1- x Ge x at constant thickness increased gradually with increasing Ge composition, resulting from an increase in the amplitude of the wavy surface before defect formation. At higher Ge compositions, the residual strain in Si1- x Ge x significantly decreased through the formation of defects along with an abrupt increase in the RMS roughness. The variation of the surface roughness of Si1- x Ge x :B depended on the boron (B) concentration. At low B concentrations, the RMS roughness of Si1- x Ge x remained constant regardless of Ge composition, which is similar to that of undoped Si1- x Ge x . However, at high B concentrations, the RMS roughness of Si1- x Ge x :B increased greatly due to B islanding. In addition, at very high B concentrations ( 9.9 at%), the RMS roughness of Si1- x Ge x :B decreased due to non-epitaxial growth.

III-V/Ge MOS device technologies for low power integrated systems

NASA Astrophysics Data System (ADS)

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

2016-11-01

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gila, Brent; Appleton, Bill R.; Fridmann, Joel

2011-06-01

The University of Florida (UF) have collaborated with Raith to develop a version of the Raith ionLiNE IBL system that has the capability to deliver multi-ion species in addition to the Ga ions normally available. The UF system is currently equipped with a AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable of delivering Au and Si ions and ion clusters for ion beam processing. Other LMAIS systems could be developed in the future to deliver other ion species. This system is capable of high performance ion beam lithography, sputter profiling, maskless ion implantation, ion beammore » mixing, and spatial and temporal ion beam assisted writing and processing over large areas (100 mm2)--all with selected ion species at voltages from 15-40 kV and nanometer precision. We discuss the performance of the system with the AuSi LMAIS source and ExB mass separator. We report on initial results from the basic system characterization, ion beam lithography, as well as for basic ion-solid interactions.« less

Infall and outflow motions towards a sample of massive star-forming regions from the RMS survey

NASA Astrophysics Data System (ADS)

Cunningham, N.; Lumsden, S. L.; Moore, T. J. T.; Maud, L. T.; Mendigutía, I.

2018-06-01

We present the results of an outflow and infall survey towards a distance-limited sample of 31 massive star-forming regions drawn from the Red MSX source (RMS) survey. The presence of young, active outflows is identified from SiO (8-7) emission and the infall dynamics are explored using HCO+/H13CO+ (4-3) emission. We investigate if the infall and outflow parameters vary with source properties, exploring whether regions hosting potentially young active outflows show similarities or differences with regions harbouring more evolved, possibly momentum-driven, `fossil' outflows. SiO emission is detected towards approximately 46 per cent of the sources. When considering sources with and without an SiO detection (i.e. potentially active and fossil outflows, respectively), only the 12CO outflow velocity shows a significant difference between samples, indicating SiO is more prevalent towards sources with higher outflow velocities. Furthermore, we find the SiO luminosity increases as a function of the Herschel 70 μm to WISE 22 μm flux ratio, suggesting the production of SiO is prevalent in younger, more embedded regions. Similarly, we find tentative evidence that sources with an SiO detection have a smaller bolometric luminosity-to-mass ratio, indicating SiO (8-7) emission is associated with potentially younger regions. We do not find a prevalence towards sources displaying signatures of infall in our sample. However, the higher energy HCO+ transitions may not be the best suited tracer of infall at this spatial resolution in these regions.

Dopants Diffusion in Silicon during Molecular Oxygen/nitrogen Trifluoride Oxidation and Related Phenomena

NASA Astrophysics Data System (ADS)

Kim, U. S.

1990-01-01

To date, chlorine has been used as useful additives in silicon oxidation. However, rapid scaling of device dimensions motivates the development of a new dielectric layer or modification of the silicon dioxide itself. More recently, chemically enhanced thermal oxidation by the use of fluorine containing species has been introduced to verify the potential of fluorine in the silicon oxidation process. In this study, gaseous nitrogen trifluoride (NF _3) was selected as the fluorine oxidizing source based on ease of use and was compared with the dichlorofluoroethane (C_2H _3Cl_2F) source. Two different kinds of boron marker samples were prepared and oxidized in O_2/NF_3 ambient for the comparison of surface vs bulk oxidation enhanced/retarded diffusion (OED/ORD). The phosphorus, arsenic and antimony diffusion in silicon during fluorine oxidation has been studied using the various covering layers such as SiO_2, Si_3 N_4, and SiO_2 + Si_3N_4 layers. The oxidation related phenomena, i.e. enhanced silicon and silicon nitride oxidation in fluorine ambient were studied and correlated with the point defect balance at the oxidizing interface. The results of this investigation were discussed with special emphasis on the effect of fluorine on enhanced oxidation and dopant diffusion.

Stereocontrolled Cyanohydrin Ether Synthesis through Chiral Brønsted Acid-Mediated Vinyl Ether Hydrocyanation

PubMed Central

Lu, Chunliang; Su, Xiaoge; Floreancig, Paul E.

2013-01-01

Vinyl ethers can be protonated to generate oxocarbenium ions that react with Me3SiCN to form cyanohydrin alkyl ethers. Reactions that form racemic products proceed efficiently upon converting the vinyl ether to an α-chloro ether prior to cyanide addition in a pathway that proceeds through Brønsted acid-mediated chloride ionization. Enantiomerically enriched products can be accessed by directly protonating the vinyl ether with a chiral Brønsted acid to form a chiral ion pair. Me3SiCN acts as the nucleophile and PhOH serves as a stoichiometric proton source in a rare example of an asymmetric bimolecular nucleophilic addition reaction into an oxocarbenium ion. Computational studies provide a model for the interaction between the catalyst and the oxocarbenium ion. PMID:23968162

Search for new phases in the Praseodymium-Silicon system

NASA Astrophysics Data System (ADS)

de La Venta, Jose; Basaran, Ali C.; Grant, Ted; Gallardo-Amores, J.; Ramirez, J. G.; Suchomel, M. R.; Alario-Franco, M. A.; Fisk, Zachary; Schuller, Ivan K.

2013-03-01

We searched for new superconducting and magnetic phases in the Pr-Si system using high-pressure high-temperature and conventional arc melting syntheses. High pressure synthesis is a unique technique which allows incorporation of elements into compounds which otherwise cannot be synthesized at ambient pressure Both high and low Si concentration areas of the phase diagram were explored. To investigate the high Si concentration compounds, PrSi2 with an excess of Si was subjected to HP-HT synthesis. To explore the high Pr concentration binary compound Pr5Si3, we have synthesized undoped Pr5Si3 as well as different samples doped with C or B. High resolution X-ray powder diffraction, Magnetic Field Modulated Microwave Spectroscopy and magnetic characterization found that the addition of C gave rise to multiple previously-unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far unconfirmed Pr3Si2 phase. Work supported by AFOSR MURI #F49550-09-1-0577 dedicated to Search for New Superconductors for Energy and Power A. Use of the Advanced Photon Source at ANL was supported by the U. S. DoE, Office of Basic Energy Sciences, Contract No. DE-AC02-06CH11357.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

2010-01-01

Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

Effects of Deposition Parameters on Thin Film Properties of Silicon-Based Electronic Materials Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

NASA Astrophysics Data System (ADS)

Theil, Jeremy Alfred

The motivation of this thesis is to discuss the major issues of remote plasma enhanced chemical vapor deposition (remote PECVD) that affect the properties Si-based thin films. In order to define the issues required for process optimization, the behavior of remote PECVD process must be understood. The remote PECVD process is defined as having four segments: (1) plasma generation, (2) excited species extraction, (3) excited species/downstream gas mixing, and (4) surface reaction. The double Langmuir probe technique is employed to examine plasma parameters under 13.56 MHz and 2.54 GHz excitation. Optical emission spectroscopy is used to determine changes in the excited states of radiating species in the plasma afterglow. Mass spectrometry is used to determine the excitation and consumption of process gases within the reactor during film growth. Various analytical techniques such as infrared absorption spectroscopy, (ir), high resolution transmission electron microscopy, (HRTEM), and reflected high energy electron diffraction, (RHEED), are used to ascertain film properties. The results of the Langmuir probe show that plasma coupling is frequency dependent and that the capacitive coupling mode is characterized by orders of magnitude higher electron densities in the reactor than inductive coupling. These differences can be manifested in the degree to which a hydrogenated amorphous silicon, a-Si:H, component co-deposition reaction affects film stoichiometry. Mass spectrometry shows that there is an additional excitation source in the downstream glow. In addition the growth of microcrystalline silicon, muc-Si, is correlated with the decrease in the production of disilane and heavier Si-containing species. Chloronium, H_2 Cl^{+}, a super acid ion is identified for the first time in a CVD reactor. It forms from plasma fragmentation of SiH_2 Cl_2, and H_2 . Addition of impurity gases was shown not to affect the electron temperature of the plasma. By products of deposition reactions can affect film properties by post -deposition reactions with the film. In the case of SiO _2 film growth, residual H _2O is shown to create OH groups within the film by reacting with distorted Si-O-Si bonding groups.

Effects of SiC whiskers and particles on precipitation in aluminum matrix composites

NASA Astrophysics Data System (ADS)

Papazian, John M.

1988-12-01

The age-hardening precipitation reactions in aluminum matrix composites reinforced with discontinuous SiC were studied using a calorimetric technique. Composites fabricated with 2124, 2219, 6061, and 7475 alloy matrices were obtained from commercial sources along with unreinforced control materials fabricated in a similar manner. The 7475 materials were made by a casting process while the others were made by powder metallurgy: the SiC reinforcement was in the form of whiskers or particulate. It was found that the overall age-hardening sequence of the alloy was not changed by the addition of SiC, but that the volume fractions of various phases and the precipitation kinetics were substantially modified. Precipitation and dissolution kinetics were generally accelerated. A substantial portion of this acceleration was found to be due to the powder metallurgy process employed to make the composites, but the formation kinetics of some particular precipitate phases were also strongly affected by the presence of SiC. It was observed that the volume fraction of GP zones able to form in the SiC containing materials was significantly reduced. The presence of SiC particles also caused normally quench insensitive materials such as 6061 to become quench sensitive. The microstructural origins of these effects are discussed.

Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source

NASA Astrophysics Data System (ADS)

Meng, Erchao; Ueki, Akiko; Meng, Xiang; Suzuki, Hiroaki; Itahara, Hiroshi; Tatsuoka, Hirokazu

2016-08-01

Si nanosheets connected to Si nanowires were synthesized using a MnCl2/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH4 or SiCl4. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radnóczi, G. Z.; Battistig, G.; Pécz, B., E-mail: pecz.bela@ttk.mta.hu

2015-02-17

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a secondmore » region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.« less

Outflow structure and velocity field of Orion source. I. ALMA imaging of SiO isotopologue maser and thermal emission

NASA Astrophysics Data System (ADS)

Niederhofer, F.; Humphreys, E. M. L.; Goddi, C.

2012-12-01

Using Science Verification data from the Atacama Large Millimeter/Submillimeter Array (ALMA), we have identified and imaged five rotational transitions (J = 5-4 and J = 6-5) of the three silicon monoxide isotopologues 28SiO v = 0, 1, 2 and 29SiO v = 0 and 28Si18O v = 0 in the frequency range from 214 to 246 GHz towards the Orion BN/KL region. The emission of the ground-state 28SiO, 29SiO and 28Si18O shows an extended bipolar shape in the northeast-southwest direction at the position of Radio Source I, indicating that these isotopologues trace an outflow ( 18 km s-1, PA 50°, 5000 AU in diameter) that is driven by this embedded high-mass young stellar object (YSO). Whereas on small scales (10-1000 AU) the outflow from Source I has a well-ordered spatial and velocity structure, as probed by Very Long Baseline Interferometry (VLBI) imaging of SiO masers, the large scales (500-5000 AU) probed by thermal SiO with ALMA reveal a complex structure and velocity field, most likely related to the effects of the environment of the BN/KL region on the outflow emanating from Source I. The emission of the vibrationally-excited species peaks at the position of Source I. This emission is compact and not resolved at an angular resolution of 1farcs5 ( 600 AU at a distance of 420 pc). 2D Gaussian fitting to individual velocity channels locates emission peaks within radii of 100 AU, i.e. they trace the innermost part of the outflow. A narrow spectral profile and spatial distribution of the v = 1 J = 5-4 line similar to the masing v = 1 J = 1-0 transition, provide evidence for the most highly rotationally excited (frequency > 200 GHz) SiO maser emission associated with Source I known to date. The maser emission will enable studies of the Source I disk-outflow interface with future ALMA longest baselines.

An unusual alkylidyne homologation.

PubMed

Han, Yong-Shen; Hill, Anthony F; Kong, Richard Y

2018-02-27

The reaction of [W([triple bond, length as m-dash]CH)Br(CO) 2 (dcpe)] (dcpe = 1,2-bis(dicyclohexylphosphino)ethane) with t BuLi and SiCl 4 affords the trichlorosilyl ligated neopentylidyne complex [W([triple bond, length as m-dash]C t Bu)(SiCl 3 )(CO) 2 (dcpe)]. This slowly reacts with H 2 O to afford [W([triple bond, length as m-dash]CCH 2 t Bu)Cl 3 (dcpe)] and ultimately H 2 C[double bond, length as m-dash]CH t Bu via an unprecedented alkylidyne homologation in which coordinated CO is the source of the additional carbon atom with potential relevance to the Fischer-Tropsch process.

Investigation on nonlinear optical properties of MoS2 nanoflake, grown on silicon and quartz substrates

NASA Astrophysics Data System (ADS)

Bayesteh, S.; Mortazavi, S. Z.; Reyhani, A.

2018-03-01

In this study, MoS2 was directly synthesized by one-step thermal chemical vapour deposition (TCVD), on different substrates including Si/SiO2 and quartz, using MoO3 and sulfide powders as precursor. The XRD patterns demonstrate the high crystallinity of MoS2 on Si/SiO2 and quartz substrates. SEM confirmed the formation of MoS2 grown on both substrates. According to line width and frequency difference between the E1 2g and A1g in Raman spectroscopy, it is inferred that the MoS2 grown on Si/SiO2 substrate is monolayer and the MoS2 grown on quartz substrate is multilayer. Moreover, by assessment of MoS2 nanoflake band gap via UV-visible analysis, it verified the formation of few layer structures. In addition, the open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the synthesized MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as light source. The monolayer MoS2 synthesized on Si/SiO2, display considerable two-photon absorption. However, the multilayer MoS2 synthesized on quartz displayed saturable absorption (SA). It is noticeable that both samples demonstrate obvious self-defocusing behaviour.

A novel monodisperse SiO2@C-dot for the rapid and facile identification of latent fingermarks using self-quenching resistant solid-state fluorescence.

PubMed

Peng, Di; Liu, Xiang; Huang, Mengjun; Wang, Dan; Liu, Renlong

2018-04-24

Solid powder fluorescence shows great potential for application in medicine, biology, and engineering, especially in the identification of latent fingermarks in forensic science. However, conventional developing methods suffer from some drawbacks, such as low contrast, low sensitivity, low selectivity, and high toxicity. To conquer these challenges, novel SiO2@C-dot microspheres were prepared via a facile one-pot hydrothermal method by using citric acid as a carbon source and aminosilane as a nitrogen source. Interestingly, the results showed that the resultant powders possess good monodispersity, high fluorescence emission, and resistance to self-quenching. Additionally, the mechanism for the solid-state fluorescence of SiO2@C-dot compounds was also investigated. More importantly, the fingermarks on various surfaces, including transparent glasses, ceramic tiles, transparent plastics, aluminum alloys, plastic cards, painted woods, artificial leathers, and Chinese paper money, developed by the powders have indicated well-defined papillary ridges under a 365 nm UV lamp. The novel strategy of using monodisperse SiO2@C-dot microspheres as a fluorescent label for developing latent fingermarks showed greater advantages compared to conventional methods, which was also demonstrated using the automatic fingerprint identification system. It is simple, rapid, low-cost, nontoxic, and effective, and is expected to be a promising alternative for the development of latent fingerprints in forensic science.

Synthesis and Luminescence Properties of Rare Earth Activated Phosphors for near UV-Emitting LEDs for Efficacious Generation of White Light

NASA Astrophysics Data System (ADS)

Han, Jinkyu

Solid state white-emitting lighting devices based on LEDs outperform conventional light sources in terms of lifetime, durability, and luminous efficiency. Near UV-LEDs in combination with blue-, green-, and red-emitting phosphors show superior luminescence properties over the commercialized blue-emitting LED with yellow-emitting phosphors. However, phosphor development for near UV LEDs is a challenging problem and a vibrant area of research. In addition, using the proper synthesis technique is an important consideration in the development of phosphors. In this research, efficient blue-, green-yellow, red-emitting, and color tunable phosphors for near UV LEDs based white light are identified and prepared by various synthetic methods such as solid state reaction, sol-gel/Pechini, co-precipitation, hydrothermal, combustion and spray-pyrolysis. Blue-emittingLiCaPO4:Eu2+, Green/yellow-emitting (Ba,Sr)2SiO4:Eu2+, color tunable solid solutions of KSrPO4-(Ba,Ca)2SiO4:Eu 2+, and red-emitting (Ba,Sr,Ca)3MgSi2O 8:Eu2+,Mn2+ show excellent excitation profile in the near UV region, high quantum efficiency, and good thermal stability for use in solid state lighting applications. In addition, different synthesis methods are analyzed and compared, with the goal of obtaining ideal phosphors, which should have not only have high luminous output but also optimal particle size (˜150--400 nm) and spherical morphology. For Sr2SiO 4:Eu2+, the sol-gel method appears to be the best method. For Ba2SiO4:Eu2+, the co-precipitation method is be the best. Lastly, the fabrication of core/SiO2 shell particles alleviate surface defects and improve luminescence output and moisture stability of nano and micron sized phosphors. For nano-sized Y2O 3:Eu3+, Y2SiO5:Ce3+,Tb 3+, and (Ba,Sr)2SiO4, the luminescence emission intensity of the core/shell particles were significantly higher than that of bare cores. Additionally, the moisture stability is also improved by SiO 2 shells, the luminescence output of SiO2 coated green emitting Ca3SiO4Cl2:Eu2+ and blue emitting Ca2PO4Cl:Eu2+ phosphors is comparable to that of fresh phosphors although bare phosphors shows significant luminescence quenching after water exposure.

A FEATURE MOVIE OF SiO EMISSION 20-100 AU FROM THE MASSIVE YOUNG STELLAR OBJECT ORION SOURCE I

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matthews, L. D.; Greenhill, L. J.; Goddi, C.

2010-01-01

We present multi-epoch Very Long Baseline Array imaging of the {sup 28}SiO v = 1 and v = 2, J = 1-0 maser emission toward the massive young stellar object (YSO) Orion Source I. Both SiO transitions were observed simultaneously with an angular resolution of approx0.5 mas (approx0.2 AU for d = 414 pc) and a spectral resolution of approx0.2 km s{sup -1}. Here we explore the global properties and kinematics of the emission through two 19-epoch animated movies spanning 21 months (from 2001 March 19 to 2002 December 10). These movies provide the most detailed view to date ofmore » the dynamics and temporal evolution of molecular material within approx20-100 AU of a massive (approx>8 M{sub sun}) YSO. As in previous studies, we find that the bulk of the SiO masers surrounding Source I lie in an X-shaped locus; the emission in the south and east arms is predominantly blueshifted, and emission in the north and west is predominantly redshifted. In addition, bridges of intermediate-velocity emission are observed connecting the red and blue sides of the emission distribution. We have measured proper motions of over 1000 individual maser features and found that these motions are characterized by a combination of radially outward migrations along the four main maser-emitting arms and motions tangent to the intermediate-velocity bridges. We interpret the SiO masers as arising from a wide-angle bipolar wind emanating from a rotating, edge-on disk. The detection of maser features along extended, curved filaments suggests that magnetic fields may play a role in launching and/or shaping the wind. Our observations appear to support a picture in which stars with masses as high as at least 8 M{sub sun} form via disk-mediated accretion. However, we cannot yet rule out that the Source I disk may have been formed or altered following a recent close encounter.« less

Improvement of silicone rubber properties by addition of nano-SiO2 particles.

PubMed

Wu, Lianfeng; Wang, Xianming; Ning, Liang; Han, Jianjun; Wan, Zhong; Lu, Min

2016-07-04

To improve the comprehensive performances of a one-part room temperature vulcanized silicone rubber(RTV-1 SiR), Nano-SiO2 particles are employed as the reinforcing agent. The SiO2/RTV-1 SiR composite is prepared using PDMS, ND42, D-60 and HMDS-modified SiO2 particles by mixing method. And then, the mechanical and electrical properties, including shear strength, tensile strength, hardness Shore A and volume resistivity, are investigated using experimental method. The addition of nano-SiO2 particles can improve the properties of the SiO2/RTV-1 SiR composite in different degrees. And, the incorporation of 25~30 phr nano-SiO2 particles is found to be reasonable for silicone rubber composite with the best comprehensive performances. The significant improvement of mechanical properties and electrical insulation of SiO2 may be contributed to the addition of modified nano-SiO2 particles. Additionally, the excellent comprehensive performances of SiO2/RTV-1 SiR composite guarantee a potential applications as electrical-insulating adhesives.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

NASA Astrophysics Data System (ADS)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-01

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Towards monitoring the englacial fracture state using virtual-reflector seismology

NASA Astrophysics Data System (ADS)

Lindner, F.; Weemstra, C.; Walter, F.; Hadziioannou, C.

2018-04-01

In seismology, coda wave interferometry (CWI) is an effective tool to monitor time-lapse changes using later arriving, multiply scattered coda waves. Typically, CWI relies on an estimate of the medium's impulse response. The latter is retrieved through simple time-averaging of receiver-receiver cross-correlations of the ambient field, i.e. seismic interferometry (SI). In general, the coda are induced by heterogeneities in the Earth. Being comparatively homogeneous, however, ice bodies such as glaciers and ice sheets exhibit little scattering. In addition, the temporal stability of the time-averaged cross-correlations suffers from temporal variations in the distribution and amplitude of the passive seismic sources. Consequently, application of CWI to ice bodies is currently limited. Nevertheless, fracturing and changes in the englacial macroscopic water content alter the bulk elastic properties of ice bodies, which can be monitored with cryoseismological measurements. To overcome the current limited applicability of CWI to ice bodies, we therefore introduce virtual-reflector seismology (VRS). VRS relies on a so-called multidimensional deconvolution (MDD) process of the time-averaged crosscorrelations. The technique results in the retrieval of a medium response that includes virtual reflections from a contour of receivers enclosing the region of interest (i.e., the region to be monitored). The virtual reflections can be interpreted as artificial coda replacing the (lacking) natural scattered coda. Hence, this artificial coda might be exploited for the purpose of CWI. From an implementation point of view, VRS is similar to SI by MDD, which, as its name suggests, also relies on a multidimensional deconvolution process. SI by MDD, however, does not generate additional virtual reflections. Advantageously, both techniques mitigate spurious coda changes associated with temporal variations in the distribution and amplitude of the passive seismic sources. In this work, we apply SI by MDD and VRS to synthetic and active seismic surface-wave data. The active seismic data were acquired on Glacier de la Plaine Morte, Switzerland. We successfully retrieve virtual reflections through the application of VRS to this active seismic data. In application to both synthetic and active seismic data, we show the potential of VRS to monitor time-lapse changes. In addition, we find that SI by MDD allows for a more accurate determination of phase velocity.

Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

NASA Astrophysics Data System (ADS)

Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

2018-05-01

SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

Testing contamination source identification methods for water distribution networks

DOE PAGES

Seth, Arpan; Klise, Katherine A.; Siirola, John D.; ...

2016-04-01

In the event of contamination in a water distribution network (WDN), source identification (SI) methods that analyze sensor data can be used to identify the source location(s). Knowledge of the source location and characteristics are important to inform contamination control and cleanup operations. Various SI strategies that have been developed by researchers differ in their underlying assumptions and solution techniques. The following manuscript presents a systematic procedure for testing and evaluating SI methods. The performance of these SI methods is affected by various factors including the size of WDN model, measurement error, modeling error, time and number of contaminant injections,more » and time and number of measurements. This paper includes test cases that vary these factors and evaluates three SI methods on the basis of accuracy and specificity. The tests are used to review and compare these different SI methods, highlighting their strengths in handling various identification scenarios. These SI methods and a testing framework that includes the test cases and analysis tools presented in this paper have been integrated into EPA’s Water Security Toolkit (WST), a suite of software tools to help researchers and others in the water industry evaluate and plan various response strategies in case of a contamination incident. Lastly, a set of recommendations are made for users to consider when working with different categories of SI methods.« less

Kinetic manipulation of silicide phase formation in Si nanowire templates.

PubMed

Chen, Yu; Lin, Yung-Chen; Zhong, Xing; Cheng, Hung-Chieh; Duan, Xiangfeng; Huang, Yu

2013-08-14

The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investigated due to their significance in microelectronics. Applying high-quality silicides as contacts in nanoscale silicon (Si) devices has caught considerable attention recently for their potential in improving and introducing new functions in nanodevices. However, nucleation and diffusion mechanisms are found to be very different in one-dimensional (1-D) nanostructures, and thus the phase manipulation of silicides is yet to be achieved there. In this work, we report kinetic phase modulations to selectively enhance or hinder the growth rates of targeted nickel (Ni) silicides in a Si nanowire (NW) and demonstrate that Ni31Si12, δ-Ni2Si, θ-Ni2Si, NiSi, and NiSi2 can emerge as the first contacting phase at the silicide/Si interface through these modulations. First, the growth rates of silicides are selectively tuned through template structure modifications. It is demonstrated that the growth rate of diffusion limited phases can be enhanced in a porous Si NW due to a short diffusion path, which suppresses the formation of interface limited NiSi2. In addition, we show that a confining thick shell can be applied around the Si NW to hinder the growth of the silicides with large volume expansion during silicidation, including Ni31Si12, δ-Ni2Si, and θ-Ni2Si. Second, a platinum (Pt) interlayer between the Ni source and the Si NW is shown to effectively suppress the formation of the phases with low Pt solubility, including the dominating NiSi2. Lastly, we show that with the combined applications of the above-mentioned approaches, the lowest resistive NiSi phase can form as the first phase in a solid NW with a Pt interlayer to suppress NiSi2 and a thick shell to hinder Ni31Si12, δ-Ni2Si, and θ-Ni2Si simultaneously. The resistivity and maximum current density of NiSi agree reasonably to reported values.

A movie of accretion/ejection of material in a high-mass YSO in Orion BN/KL at radii comparable to the Solar System

NASA Astrophysics Data System (ADS)

Goddi, C.; Greenhill, L.; Humphreys, E.; Matthews, L.; Chandler, C.

2010-11-01

Around high-mass Young Stellar Objects (YSOs), outflows are expected to be launched and collimated by accretion disks inside radii of 100 AU. Strong observational constraints on disk-mediated accretion in this context have been scarce, largely owing to difficulties in probing the circumstellar gas at scales 10-100 AU around high-mass YSOs, which are on average distant (>1 Kpc), form in clusters, and ignite quickly whilst still enshrouded in dusty envelopes. Radio Source I in Orion BN/KL is the nearest example of a high-mass YSO, and only one of three YSOs known to power SiO masers. Using VLA and VLBA observations of different SiO maser transitions, the KaLYPSO project (http://www.cfa.harvard.edu/kalypso/) aims to overcome past observational limitations by mapping the structure, 3-D velocity field, and dynamical evolution of the circumstellar gas within 1000 AU from Source I. Based on 19 epochs of VLBA observations of v=1,2 SiO masers over ~2 years, we produced a movie of bulk gas flow tracing the compact disk and the base of the protostellar wind at radii < 100 AU from Source I. In addition, we have used the VLA to map 7mm SiO v=0 emission and track proper motions over 10 years. We identify a narrowly collimated outflow with a mean motion of 18 km/s at radii 100-1000 AU, along a NE-SW axis perpendicular to that of the disk traced by the v=1,2 masers. The VLBA and VLA data exclude alternate models that place outflow from Source I along a NW-SE axis. The analysis of the complete (VLBA and VLA) dataset provides the most detailed evidence to date that high-mass star formation occurs via disk-mediated accretion.

Differentiation of Cuscuta chinensis and Cuscuta australis by HPLC-DAD-MS analysis and HPLC-UV quantitation.

PubMed

He, Xianghui; Yang, Wenzhi; Ye, Min; Wang, Qing; Guo, Dean

2011-11-01

Cuscuta chinensis and Cuscuta australis, the two botanical sources of the Chinese herbal medicine Tu-Si-Zi, were distinguished from each other based on qualitative and quantitative chemical analysis. By HPLC‑DAD‑MS, a total of 36 compounds were characterized from these two Cuscuta species, including 14 flavonoids, 17 quinic acid derivatives, and 5 lignans. In addition, HPLC‑UV was applied to determine seven major compounds (6 flavonoids plus chlorogenic acid) in 27 batches of Tu-Si-Zi. The results revealed that the amounts of the three classes of compounds varied significantly between the species. C. australis contained more flavonoids but less quinic acid derivatives and lignans than C. chinensis. Particularly, the amounts of kaempferol and astragalin in C. australis were remarkably higher than in C. chinensis. This finding could be valuable for the quality control of Tu-Si-Zi. © Georg Thieme Verlag KG Stuttgart · New York.

Non-Plasmonic SERS with Silicon: Is It Really Safe? New Insights into the Optothermal Properties of Core/Shell Microbeads.

PubMed

Bontempi, Nicolò; Vassalini, Irene; Danesi, Stefano; Ferroni, Matteo; Donarelli, Maurizio; Colombi, Paolo; Alessandri, Ivano

2018-05-03

Silicon is one of the most interesting candidates for plasmon-free surface-enhaced Raman scattering (SERS), because of its high-refractive index and thermal stability. However, here we demonstrate that the alleged thermal stability of silicon nanoshells irradiated by conventional Raman laser cannot be taken for granted. We investigated the opto-thermal behavior of SiO 2 /Si core/shell microbeads (Si-rex) irradiated with three common Raman laser sources (λ = 532, 633, 785 nm) under real working conditions. We obtained an experimental proof of the critical role played by bead size and aggregation in heat and light management, demonstrating that, in the case of strong opto-thermal coupling, the temperature can exceed that of the melting points of both core and shell components. In addition, we also show that weakly coupled beads can be utilized as stable substrates for plasmon-free SERS experiments.

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

NASA Technical Reports Server (NTRS)

Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

1993-01-01

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Germanium/silicon ratios as a tracer of silica sources in Hawaiian streams

NASA Astrophysics Data System (ADS)

Kurtz, A.; Derry, L.; Chadwick, O.

2003-04-01

Ge/Si ratios show great promise as a tracer of terrestrial silica cycling, weathering, and hydrologic flowpaths in catchment studies. Germanium is a trace element whose behavior mimics silicon in most environments. Silicate weathering fractionates Ge/Si though preferential incorporation of Ge in secondary clays. Dissolved Ge/Si ratios of most streams 1) are lower than those in the rocks they drain, 2) vary with discharge, and 3) fall on a two-component mixing curve when plotted against [Si]. These observations have led to the suggestion that streamwater Ge/Si ratios trace watershed-integrated weathering intensity, via mixing between a high [Si], low Ge/Si component derived from incongruent weathering of primary silicates, and a low [Si], high Ge/Si component derived from dissolution of secondary minerals. We tested this model by measuring depth profiles of soil and soil-water [Si] and Ge/Si ratios from six sites along a soil chronosequence in Hawaii. Soils range from incipiently weathered at the young (300 year-old substrate) end of the chronosequence to intensely weathered in soils older than 20,000 years. All sites have essentially identical parent material, climate (250 cm rain/year), and vegetation (Ohia and tree-ferns). Solid-phase Ge/Si in these soils increase with silica depletion from basalt-like values of 2.5 µmol/mol in young soils to values > 20 µmol/mol as Ge is preferentially retained by secondary phases in older soils. Soil-water compositions depend primarily on depth. Deep soil-waters (>20 cm) have low [Si] and high Ge/Si (1.5 to 5 µmol/mol), consistent with dissolution of Ge-enriched secondary minerals. Surface horizon soil-waters (<15cm) from all profiles have high [Si], in some cases approaching opal saturation, and low Ge/Si (0.3 to 1 µmol/mol). This component is consistent with dissolution of low Ge/Si terrestrial plant phytolith opal. We find no evidence that incongruent weathering contributes a high [Si], low Ge/Si soil-water component, even in young soils that still contain volcanic glass. Instead, Hawaiian streamwater Ge/Si ratios appear to trace mixing between phytolith-derived Si sourced in surface soils, and secondary mineral-derived Si sourced in deep soils. A compilation of published Ge/Si data from USGS-gauged Hawaiian streams indicates that all are dominated by this low Ge/Si, apparently phytolith-derived source of Si. Only watersheds draining well-developed soils ever show high Ge/Si ratios, and only during periods of high discharge. Mass balance calculations suggest that ~80% of the silica flux carried by studied Hawaiian streams is delivered to streams via the soil phytolith silica pool.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

PubMed

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-25

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Geochemical Evidence Against Pyroxenites in the Sources of Hawaiian Volcanoes

NASA Astrophysics Data System (ADS)

Humayun, M.; Yang, S.; Clague, D. A.

2017-12-01

Hawaiian lavas exhibit high Fe/Mn ratios, and other elemental and isotopic characteristics, that have been argued to be evidence for chemical interactions at the core-mantle boundary. Alternatively, the enrichment in silica relative to 3 GPa melts of garnet peridotite, and the high Fe/Mn, has been argued to represent the contributions of garnet pyroxenite melts generated beneath a thick lithosphere. Here, we present a set of new elemental ratios designed to effectively discriminate partial melts of peridotite from pyroxenite in mantle sources. A set of 200 Hawaiian volcanic glasses from 7 volcanoes were analyzed by LA-ICP-MS for the abundances of 63 elements, with an emphasis on obtaining precise Ge/Si ratios. From experimental partitioning, silica-rich partial melts of MORB-like garnet pyroxenite are expected to have low Ge/Si ratios relative to their sources due to the retention of Ge in the residue by both garnet and pyroxene. In contrast, partial melts of peridotite are expected to have high Ge/Si ratios relative to mantle peridotites due to the incompatibility of Ge in olivine. We observed that Ge abundances in subaerial Hawaiian volcanoes are correlated with indicators of volcanic degassing, including S, Re and As. Subaerial and submarine lavas exhibit a correlation between Ge/Si ratio and S content that indicates that all Hawaiian lavas share the same pre-eruptive Ge/Si ratio. Submarine glasses with the least evidence of degassing exhibit a constant Ge/Si ratio over the range of SiO2 (44-52 %) observed in Hawaiian volcanics. Surprisingly, MORB glasses exhibit more variation in Ge/Si ratio than the pre-eruptive Ge/Si of Hawaiian glasses, implying the presence of 0-12% recycled crust in the MORB source. The constant Ge/Si ratio of Hawaiian glasses implies that pyroxenite melting did not enrich Hawaiian lavas in silica. Processes that could yield Si-rich melts without changing the Ge/Si ratio may involve melt-lithosphere interaction or bridgmanite/ferropericlase fractionation in the deep mantle.

Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining

NASA Astrophysics Data System (ADS)

Li, Jingwei; Bai, Xiaolong; Li, Yanlei; Ban, Boyuan; Chen, Jian

2015-12-01

The effect of Ga addition on alloy macrostructure, morphology and recovery rate of primary Si during the Al-Si-Ga alloy solvent refining process of silicon was studied in this work. The addition of Ga to Al-Si alloy could change the morphology of the primary Si. The average plate thickness of the primary Si increases with increase of Ga content. With the increase of Ga content, the average plate length of the primary Si crystals becomes larger when the Ga content is less than 5% in the Al-30%Si-xGa alloy, but becomes smaller when the Ga content exceeds 5%. Al-Si-Ga alloys consist of three types, primary Si, GaxAl1-x, (α-Al+Si+β-Ga) eutectic. (111) is the preferred growth surface of the plate-like primary Si. The recovery rate of the primary Si increases with the increase of Ga content. When the Ga content increased to 20% in Al-30%Si-xGa alloy, the relative recovery rate of the primary Si increased to 50.41% than that in Al-30%Si alloy.

Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

NASA Astrophysics Data System (ADS)

Eneman, Geert; De Keersgieter, An; Witters, Liesbeth; Mitard, Jerome; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron

2013-04-01

The interaction between two stress techniques, strain-relaxed buffers (SRBs) and epitaxial source/drain stressors, is studied on short, Si1-xGex- and Ge-channel planar transistors. This work focuses on the longitudinal channel stress generated by these two techniques. Unlike for unstrained silicon-channel transistors, for strained channels on top of a strain-relaxed buffer a source/drain stressor without recess generates similar longitudinal channel stress than source/drain stressors with a deep recess. The least efficient stress transfer is obtained for source/drain stressors with a small recess that removes only the strained channel, not the substrate underneath. These trends are explained by a trade-off between elastic relaxation of the strained-channel during source/drain recess and the increased stress generation of thicker source/drain stressors. For Ge-channel pFETs, GeSn source/drains and Si1-xGex strain-relaxed buffers are efficient stressors for mobility enhancement. The former is more efficient for gate-last schemes than for gate-first, while the stress generated by the SRB is found to be independent of the gate-scheme.

Sintering and properties of Si3N4 with and without additives by HIP treatment

NASA Technical Reports Server (NTRS)

Kuratani, S.; Shimada, M.; Koizumi, M.

1986-01-01

Hot Isostatic Pressing (HIP) of Si3N4 powders with and without additives was performed using a glass container, and various kinds of pressureless-sintered Si3N4 were HIP'ed without a container. The effects of HIP treatment on density, microstructure, flexural strength, microhardness, and fracture toughness on Si3N4 ceramics were studied. Using a glass container it was difficult to reach theoretical density. The microhardness of HIP'ed Si3N4 without additives was low, and the fracture toughness of HIP'ed Si3N4 with and without additives was 22 to 25 W/m-K, and it decreased with increasing the amount of additives. The density and flexural strength, and hardness of pressureless-sintered Si3N4 which contained Al2O and Y2O3 as oxide additives were remarkably improved by HIP treatment using nitrogen as a pressure transmitting gas. It is very important to select the sintering conditions for fabricating the presintered body of Si3N4 in order to improve the mechanical properties of Si3N4 by HIP treatment.

Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

NASA Astrophysics Data System (ADS)

Raut, A. P.; Deshpande, V. K.

2018-01-01

The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness,more » etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching showed that the Si fin (source/drain region) was directly damaged by high energy hydrogen and had local variations in the damage distribution, which may lead to a shift in the threshold voltage and the off-state leakage current. Therefore, side-wall etching and ion implantation processes must be carefully designed by considering the Si damage distribution to achieve low damage and high transistor performance for complementary metal–oxide–semiconductor devices.« less

Simultaneous Observatinos of H2O and SiO Masers Toward Known Extragalactic Water Maser Sources

NASA Astrophysics Data System (ADS)

Cho, Se-Hyung; Yoon, Dong-Hwan; Kim, Jaeheon; Byun, Do-Young; Wagner, Jan

2015-12-01

We observe ten known 22 GHz H_{2}O maser galaxies during February 19-22, 2011 using the 21 m Tamna telescope of the Korean VLBI Network and a new wide-band digital spectrometer. Simultaneously we searched for 43 GHz SiO v = 1, 2, J = 1-0 maser emission. We detect H_{2}O maser emission towards five sources (M 33, NGC 1052, NGC 1068, NGC 4258, M 82), with non-detections towards the remaining sources (UGC 3193, UGC 3789, Antennae H_{2}O-West, M 51, NGC 6323) likely due to sensitivity. Our 22 GHz spectra are consistent with earlier findings. Our simultaneous 43 GHz SiO maser search produced non-detections, yielding - for the first time - upper limits on the 43 GHz SiO maser emission in these sources at a 3 σ sensitivity level of 0.018 K-0.033 K (0.24 Jy-0.44 Jy) in a 1.75 km s^{-1} velocity resolution. Our findings suggest that any 43 GHz SiO masers in these sources (some having starburst-associated H_{2}O kilomasers) must be faint compared to the 22 GHz H_{2}O maser emission.

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1989-01-01

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Source apportionment of ambient PM10 and PM2.5 in Haikou, China

NASA Astrophysics Data System (ADS)

Fang, Xiaozhen; Bi, Xiaohui; Xu, Hong; Wu, Jianhui; Zhang, Yufen; Feng, Yinchang

2017-07-01

In order to identify the sources of PM10 and PM2.5 in Haikou, 60 ambient air samples were collected in winter and spring, respectively. Fifteen elements (Na, Mg, Al, Si, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn and Pb), water-soluble ions (SO42 - and NO3-), and organic carbon (OC) and elemental carbon (EC) were analyzed. It was clear that the concentration of particulate matter was higher in winter than in spring. The value of PM2.5/PM10 was > 0.6. Moreover, the proportions of TC, ions, Na, Al, Si and Ca were more high in PM10 and PM2.5. The SOC concentration was estimated by the minimum OC/EC ratio method, and deducted from particulate matter compositions when running CMB model. According to the results of CMB model, the resuspended dust (17.5-35.0%), vehicle exhaust (14.9-23.6%) and secondary particulates (20.4-28.8%) were the major source categories of ambient particulate matter. Additionally, sea salt also had partial contribution (3-8%). And back trajectory analysis results showed that particulate matter was greatly affected by regional sources in winter, while less affected in spring. So particulate matter was not only affected by local sources, but also affected by sea salt and regional sources in coastal cities. Further research could focuses on establishing the actual secondary particles profiles and identifying the local and regional sources of PM at once by one model or analysis method.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makino, Nobuaki; Toshiba Corporation, 33 Shin-Isogo-Cho, Isogo-ku, Yokohama 235-0017; Shigeta, Yukichi

The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si{sub 1−x}Ge{sub x} (x = 0.03, 0.14) films, and the crystallization was hindered.more » The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement.« less

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

Bioinformatics Analysis of Small RNAs in Pima (Gossypium barbadense L.)

PubMed Central

Hu, Hongtao; Yu, Dazhao; Liu, Hong

2015-01-01

Small RNAs (sRNAs) are ~20 to 24 nucleotide single-stranded RNAs that play crucial roles in regulation of gene expression. In plants, sRNAs are classified into microRNAs (miRNAs), repeat-associated siRNAs (ra-siRNAs), phased siRNAs (pha-siRNAs), cis and trans natural antisense transcript siRNAs (cis- and trans-nat siRNAs). Pima (Gossypium barbadense L.) is one of the most economically important fiber crops, producing the best and longest spinnable fiber. Although some miRNAs are profiled in Pima, little is known about siRNAs, the largest subclass of plant sRNAs. In order to profile these gene regulators in Pima, a comprehensive analysis of sRNAs was conducted by mining publicly available sRNA data, leading to identification of 678 miRNAs, 3,559,126 ra-siRNAs, 627 pha-siRNAs, 136,600 cis-nat siRNAs and 79,994 trans-nat siRNAs. The 678 miRNAs, belonging to 98 conserved and 402 lineage-specific families, were produced from 2,138 precursors, of which 297 arose from introns, exons, or intron/UTR-exon junctions of protein-coding genes. Ra-siRNAs were produced from various repeat loci, while most (97%) were yielded from retrotransposons, especially LTRs (long terminal repeats). The genes encoding auxin-signaling-related proteins, NBS-LRRs and transcription factors were major sources of pha-siRNAs, while two conserved TAS3 homologs were found as well. Most cis-NATs in Pima overlapped in enclosed and convergent orientations, while a few hybridized in divergent and coincided orientations. Most cis- and trans-nat siRNAs were produced from overlapping regions. Additionally, characteristics of length and the 5’-first nucleotide of each sRNA class were analyzed as well. Results in this study created a valuable molecular resource that would facilitate studies on mechanism of controlling gene expression. PMID:25679373

Magmatism in the Shapinggou district of the Dabie orogen, China: Implications for the formation of porphyry Mo deposits in a collisional orogenic belt

NASA Astrophysics Data System (ADS)

Ren, Zhi; Zhou, Taofa; Hollings, Pete; White, Noel C.

2018-05-01

The Shapinggou molybdenum deposit is located in the Qinling-Dabie Orogen, which hosts the world's largest molybdenum belt. The igneous rocks at Shapinggou can be divided into two stages (136-127 Ma and 118-114 Ma), the early suite of felsic (136-127 Ma, SiO2 = 58.0 to 72.9 wt%) and mafic rocks (133-128 Ma, SiO2 = 45.2 to 57.0 wt%), and a later suite comprising syenite (117 Ma, SiO2 = 64.2 to 65.0 wt%), quartz syenite porphyry (116 Ma, 62.5 to 70.0 wt%), granite porphyry (112 Ma, SiO2 = 75.5 to 77.6 wt%) and diorite porphyry (111 Ma, SiO2 = 56.6 to 59.7 wt%). The early-stage felsic rocks display high SiO2, Al2O3, Na2O, K2O, Sr, LREE contents, and Sr/Y, (La/Yb)N ratios, initial Sr isotope ratios of 0.7076 to 0.7089, but low MgO, FeOT, Y, Yb contents and negative εNd(t) values, consistent with partial melting of the lower continental crust. The early-stage mafic rocks exhibit low SiO2, high MgO, Ni and Cr contents, consistent with an upper mantle source, but trace element and isotope data suggest a role for crustal contamination. The late-stage syenite and quartz syenite porphyry show high abundances of Na2O, K2O, Al2O3, HFSEs (e.g., Th, U, Zr, Hf) and significant negative Eu anomalies. The late-stage granite porphyry displays high SiO2 contents, and depletions in Ba, Sr, Eu and Ti. The geochemical features of the late-stage intrusions are similar to A-type granites. Crystal fractionation of plagioclase, K-feldspar, biotite/ muscovite, amphibole/ garnet and Fe-Ti oxides controlled the evolution of the magma. The geochemical and isotopic data suggest that the rocks at Shapinggou were likely derived from a mixed source of lithospheric mantle, subducted continental crust of the Yangtze Block (Kongling Group) and partial melts of the Dabie Complex. Early stage rocks represent melts of the source with a lower proportion of Dabie Complex materials, whereas late stage rocks were derived from a source with a higher proportion Dabie Complex component. The geochemical and isotopic variations of the intrusions at Shapinggou were controlled by both source characteristics and fractional crystallization. Although the Shapinggou deposit is located in a continental collision orogen, the magmas formed in an intraplate extension setting, with an increase in the amount of extension from the early to late stages. As well, both stages intrusions at Shapinggou were generated by the addition of heat, due to lithospheric delamination, mantle upwelling and rapid mantle convection, related to the far-field effects of the westward subduction of the paleo-Pacific Plate beneath the Asian continent. The geochemistry and setting suggest that the formation of a giant Mo deposit does not require a Mo-rich magma source, but rather an efficient convection mechanism for the transport of volatiles and Mo in a granitic magma system. The fluids derived from the granite porphyry at Shapinggou were more oxidised than that from the barren intrusions.

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor

NASA Astrophysics Data System (ADS)

Jeschke, J.; Knauer, A.; Weyers, M.

2018-02-01

The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al0.7Ga0.3N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below 1 × 1016 up to 4 × 1017 cm-3 were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC coated reactor setup and in a TaC coated setup, the SiC coatings in the reactor are identified as the most likely source for the unintentional Si doping at elevated temperatures above 1080 °C. Under identical growth conditions the background Si concentration can be reduced by up to an order of magnitude when using TaC coatings.

Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

NASA Astrophysics Data System (ADS)

Kendrick, Chito E.; Eichfeld, Sarah M.; Ke, Yue; Weng, Xiaojun; Wang, Xin; Mayer, Theresa S.; Redwing, Joan M.

2010-08-01

Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650oC to 950oC. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.

Caesium sputter ion source compatible with commercial SIMS instruments

NASA Astrophysics Data System (ADS)

Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M.; Adams, F.

2006-07-01

A simple design for a caesium sputter cluster ion source compatible with commercially available secondary ion mass spectrometers is reported. This source has been tested with the Cameca IMS 4f instrument using the cluster Si n- and Cu n- ions, and will shortly be retrofitted to the floating low energy ion gun (FLIG) of the type used on the Cameca 4500/4550 quadruple instruments. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of analytical capabilities of the SIMS instrument due to the non-additive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ions with the same impact energy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seth, Arpan; Klise, Katherine A.; Siirola, John D.

In the event of contamination in a water distribution network (WDN), source identification (SI) methods that analyze sensor data can be used to identify the source location(s). Knowledge of the source location and characteristics are important to inform contamination control and cleanup operations. Various SI strategies that have been developed by researchers differ in their underlying assumptions and solution techniques. The following manuscript presents a systematic procedure for testing and evaluating SI methods. The performance of these SI methods is affected by various factors including the size of WDN model, measurement error, modeling error, time and number of contaminant injections,more » and time and number of measurements. This paper includes test cases that vary these factors and evaluates three SI methods on the basis of accuracy and specificity. The tests are used to review and compare these different SI methods, highlighting their strengths in handling various identification scenarios. These SI methods and a testing framework that includes the test cases and analysis tools presented in this paper have been integrated into EPA’s Water Security Toolkit (WST), a suite of software tools to help researchers and others in the water industry evaluate and plan various response strategies in case of a contamination incident. Lastly, a set of recommendations are made for users to consider when working with different categories of SI methods.« less

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

NASA Astrophysics Data System (ADS)

Nordmark, H.; Nagayoshi, H.; Matsumoto, N.; Nishimura, S.; Terashima, K.; Marioara, C. D.; Walmsley, J. C.; Holmestad, R.; Ulyashin, A.

2009-02-01

Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to micrometer range of mono- and as-cut multicrystalline silicon, was observed after deposition of WSi2 particles that acted as a mask for subsequent hydrogen radical etching. Simultaneous Si whisker growth was observed for long residence time of the source gas and low H2 flow rate with high pressure. The whiskers formed via vapor-solid-solid growth, in which the deposited WSi2 particles acted as catalysts for a subsequent metal-induced layer exchange process well below the eutectic temperature. In this process, SiHx species, formed by substrate etching by the H radicals, diffuse through the metal particles. This leads to growth of crystalline Si whiskers via metal-induced solid-phase crystallization. Transmission electron microscopy, electron diffraction, and x-ray energy dispersive spectroscopy were used to study the WSi2 particles and the structure of the Si substrates in detail. It has been established that the whiskers are partly crystalline and partly amorphous, consisting of pure Si with WSi2 particles on their tips as well as sometimes being incorporated into their structure.

Uninterrupted and reusable source for the controlled growth of nanowires

PubMed Central

Sugavaneshwar, R. P.; Nanda, Karuna Kar

2013-01-01

Generally, the length of the oxide nanowires grown by vapor phase transport is limited by the degradation of the source materials. Furthermore, the source material is used once for the nanowires growth. By exploiting the Si-Zn phase diagram, we have developed a simple methodology for the non-catalytic growth of ultralong ZnO nanowires in large area with controllable aspect ratio and branched structures. The insolubility of Zn in Si and the use of a Si cap on the Zn source to prevent local source oxidation of Zn (i. e. prevents the degradation of the source) are the keys to grow longer nanowires without limitations. It has been shown that the aspect ratio can be controlled by thermodynamically (temperature) and more importantly by kinetically (vapor flux). One of the interesting findings is that the same source material can be used for several depositions of oxide nanostructured materials. PMID:23412010

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates

PubMed Central

Agostinho, Flavia B.; Tubana, Brenda S.; Martins, Murilo S.; Datnoff, Lawrence E.

2017-01-01

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha−1) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha−1 and one foliar Si solution applied at 20, 40 and 80 mg Si L−1) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As (P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si (P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants. PMID:28850079

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates.

PubMed

Agostinho, Flavia B; Tubana, Brenda S; Martins, Murilo S; Datnoff, Lawrence E

2017-08-29

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha -1 ) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha -1 and one foliar Si solution applied at 20, 40 and 80 mg Si L -1 ) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As ( P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si ( P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants.

Green synthesis of Si-incorporated hydroxyapatite using sodium metasilicate as silicon precursor and in vitro antibiotic release studies.

PubMed

Abinaya Sindu, P; Kolanthai, Elayaraja; Suganthi, R V; Thanigai Arul, K; Manikandan, E; Catalani, Luiz H; Narayana Kalkura, S

2017-10-01

The aim of the current study is to synthesize nanosized silicon incorporated HAp (Si-HAP) using sodium metasilicate as the silicon source. The sol-gel derived samples were further subjected to microwave irradiation. Incorporation of Si into HAp did not alter the HAp phase, as confirmed by the X-ray diffraction analysis (XRD). Moreover, variation in the lattice parameters of the Si-incorporated HAp indicates that Si is substituted into the HAp lattice. The decrease in the intensity of the peaks attributed to hydroxyl groups, which appeared in the FTIR and Raman spectra of Si-HAp, further confirms the Si substitution in HAp lattices. The silicon incorporation enhanced the nanorods length by 70%, when compared to that of pure HAp. Microwave irradiation improved the crystallinity of Si-HAp when compared to as-synthesized Si-HAp samples. As-synthesized Si-incorporated HAp sample showed an intense blue emission under UV excitation. Microwave irradiation reduced the intensity of blue emission and exhibited red shift due to the reduction of defects in the Si-HAp crystal. The morphological change from rod to spherical and ribbon-like forms was observed with an increase in silicon content. Further, Si-HAp exhibited better bioactivity and low dissolution rate. Initially there was a burst release of amoxicillin from all the samples, subsequently it followed a sustained release. The microwave-irradiated HAp showed extended period of sustained release than that of as-synthesized HAp and Si-HAp. Similarly, the microwave-irradiated Si-incorporated samples exhibited prolonged drug release, as compared to that of the as-synthesized samples. Hence, Si-HAp is rapidly synthesized by a simple and cost effective method without inducing any additional phases, as compared to the conventional sintering process. This study provides a new insight into the rapid green synthesis of Si-HAp. Si-HAp could emerge as a promising material for the bone tissue replacement and as a drug delivery system. Copyright © 2017 Elsevier B.V. All rights reserved.

Defense Responses in Rice Induced by Silicon Amendment against Infestation by the Leaf Folder Cnaphalocrocis medinalis

PubMed Central

Han, Yongqiang; Li, Pei; Gong, Shaolong; Yang, Lang; Wen, Lizhang; Hou, Maolin

2016-01-01

Silicon (Si) amendment to plants can confer enhanced resistance to herbivores. In the present study, the physiological and cytological mechanisms underlying the enhanced resistance of plants with Si addition were investigated for one of the most destructive rice pests in Asian countries, the rice leaf folder, Cnaphalocrocis medinalis (Guenée). Activities of defense-related enzymes, superoxide dismutase, peroxidase, catalase, phenylalanine ammonia-lyase, and polyphenol oxidase, and concentrations of malondialdehyde and soluble protein in leaves were measured in rice plants with or without leaf folder infestation and with or without Si amendment at 0.32 g Si/kg soil. Silicon amendment significantly reduced leaf folder larval survival. Silicon addition alone did not change activities of defense-related enzymes and malondialdehyde concentration in rice leaves. With leaf folder infestation, activities of the defense-related enzymes increased and malondialdehyde concentration decreased in plants amended with Si. Soluble protein content increased with Si addition when the plants were not infested, but was reduced more in the infested plants with Si amendment than in those without Si addition. Regardless of leaf folder infestation, Si amendment significantly increased leaf Si content through increases in the number and width of silica cells. Our results show that Si addition enhances rice resistance to the leaf folder through priming the feeding stress defense system, reduction in soluble protein content and cell silicification of rice leaves. PMID:27124300

Effects of Small Addition of Ti on Strength and Microstructure of a Cu-Ni-Si Alloy

NASA Astrophysics Data System (ADS)

Watanabe, Chihiro; Takeshita, Satoshi; Monzen, Ryoichi

2015-06-01

The effect of addition of 0.04 or 0.2 mass pct Ti on the mechanical properties of a Cu-2.0 mass pct Ni-0.5 mass pct Si alloy has been investigated. The addition of 0.04 mass pct Ti enhances the strength of the Cu-Ni-Si alloy without reducing its electrical conductivity. This increase in strength is caused by the decrease in inter-precipitate spacing of δ-Ni2Si precipitates. The addition of trace Ti reduces the equilibrium concentration of Ni and Si atoms in the alloy bearing the δ precipitates, resulting in an increase in the volume fraction of δ precipitates and decrease in the inter-precipitate spacing. However, the addition of 0.2 mass pct Ti to the Cu-Ni-Si alloy decreases the strength of the alloy. The reduction in strength is attributed to the decrease in the volume fraction of δ precipitates caused by the reduction in Ni and Si atoms in the Cu matrix resulting from the formation of Ni16Si7Ti6 particles.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

PubMed

Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Liang, Albert K; Zhao, Qihua

2017-07-01

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000 e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20 × 20 cm 2 , 150 μm pitch array operated at 30 fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including sampling mode, of the designs. The total electronic additive noise included noise contributions from each circuit component. The total noise results were found to exhibit a strong dependence on circuit design and operating conditions, with TFT flicker noise generally found to be the dominant noise contributor. For the single-stage designs, significantly increasing the size of the source-follower TFT substantially reduced flicker noise - with the lowest total noise found to be ~574 e [rms]. For the two-stage designs, in addition to tuning TFT sizes and introducing a low-pass filter, replacing a p-type TFT with a resistor (under the assumption in the study that resistors make no flicker noise contribution) resulted in significant noise reduction - with the lowest total noise found to be ~336 e [rms]. A methodology based on circuit simulations which facilitates comprehensive explorations of signal and noise characteristics has been developed and applied to the case of poly-Si AP arrays. The encouraging results suggest that the electronic additive noise of such devices can be substantially reduced through judicious circuit design, signal amplification, and multiple sampling. This methodology could be extended to explore the noise performance of arrays employing other pixel circuitry such as that for photon counting as well as other semiconductor materials such as a-Si:H and a-IGZO. © 2017 American Association of Physicists in Medicine.

Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

DTIC Science & Technology

2012-01-26

Resistance , Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 "With SiC, TaSi2, and LaB6 Additives Sb. GRANT NUMBER... RESISTANCE , ELECTRICAL AND THERMAL CONDUCTIVITY, AND SPECTRAL EMITTANCE OF FULLY DENSE HfB2 AND ZrB2 WITH SiC, TaSi2, AND LaB6 ADDITIVES Air Force Office...thickened regions with dry 220 grit SiC sandpaper so that a low- resistance electrical connection could be achieved. A handheld multimeter was used to measure

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

NASA Astrophysics Data System (ADS)

Meyerson, Bernard S.; Uram, Kevin J.; LeGoues, Francoise K.

1988-12-01

A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the films is accommodated by the formation of dislocation networks in the substrate wafers. A cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane's heterogeneous reaction rate by a factor of 25. A model is proposed where Ge acts as a desorption center for mobile hydrogen adatoms on the Si[100] surface, accelerating heterogeneous silane pyrolysis by the enhanced availability of chemisorption sites.

The effects of phase transformation on the structure and mechanical properties of TiSiCN nanocomposite coatings deposited by PECVD method

NASA Astrophysics Data System (ADS)

Abedi, Mohammad; Abdollah-zadeh, Amir; Bestetti, Massimiliano; Vicenzo, Antonello; Serafini, Andrea; Movassagh-Alanagh, Farid

2018-06-01

In the present study, the effects of phase transformations on the structure and mechanical properties of TiSiCN coatings were investigated. TiSiCN nanocomposite coatings were deposited on AISI H13 hot-work tool steel by a pulsed direct current plasma-enhanced chemical vapor deposition process at 350 or 500 °C, using TiCl4 and SiCl4 as the precursors of Ti and Si, respectively, in a CH4/N2/H2/Ar plasma as the source of carbon and nitrogen and reducing environment. Some samples deposited at 350 °C were subsequently annealed at 500 °C under Ar atmosphere. Super hard self-lubricant TiSiCN coatings, having nanocomposite structure consisting of TiCN nanocrystals and amorphous carbon particles embedded in an amorphous SiCNx matrix, formed through spinodal decomposition in the specimens deposited or annealed at 500 °C. In addition, it was revealed that either uncomplete or relatively coarse phase segregation of titanium compounds was achieved during deposition at 350 °C and 500 °C, respectively. On the contrary, by deposition at 350 °C followed by annealing at 500 °C, a finer structure was obtained with a sensible improvement of the mechanical properties of coatings. Accordingly, the main finding of this work is that significant enhancement in key properties of TiSiCN coatings, such as hardness, adhesion and friction coefficient, can be obtained by deposition at low temperature and subsequent annealing at higher temperature, thanks to the formation of a fine grained nanocomposite structure.

Monitoring the englacial fracture state using virtual-reflector seismology

NASA Astrophysics Data System (ADS)

Lindner, F.; Weemstra, C.; Walter, F.; Hadziioannou, C.

2017-12-01

Fracturing and changes in the englacial macroscopic water content change the elastic bulk properties of ice bodies. Small seismic velocity variations, resulting from such changes, can be measured using a technique called coda-wave interferometry. Here, coda refers to the later-arriving, multiply scattered waves. Often, this technique is applied to so-called virtual-source responses, which can be obtained using seismic interferometry (a simple crosscorrelation process). Compared to other media (e.g., the Earth's crust), however, ice bodies exhibit relatively little scattering. This complicates the application of coda-wave interferometry to the retrieved virtual-source responses. In this work, we therefore investigate the applicability of coda-wave interferometry to virtual-source responses obtained using two alternative seismic interferometric techniques, namely, seismic interferometry by multidimensional deconvolution (SI by MDD), and virtual-reflector seismology (VRS). To that end, we use synthetic data, as well as active-source glacier data acquired on Glacier de la Plaine Morte, Switzerland. Both SI by MDD and VRS allow the retrieval of more accurate virtual-source responses. In particular, the dependence of the retrieved virtual-source responses on the illumination pattern is reduced. We find that this results in more accurate glacial phase-velocity estimates. In addition, VRS introduces virtual reflections from a receiver contour (partly) enclosing the medium of interest. By acting as a sort of virtual reverberation, the coda resulting from the application of VRS significantly increases seismic monitoring capabilities, in particular in cases where natural scattering coda is not available.

Effect of soil weathering degree on the increase of cotton biomass and silicon mineralomass after amendment with biochar highly concentrated in phytoliths

NASA Astrophysics Data System (ADS)

Li, Zimin; Delvaux, Bruno; Yans, Johan; Dufour, Nicolas; Houben, David; Cornelis, Jean-Thomas

2016-04-01

Silicon (Si) is beneficial for plants, but not essential. It plays a crucial role in improving the yields of Si-accumulator crops through alleviating various biotic and abiotic stresses. The demand of Si fertilizers will likely increase due to soil desilication and removal of harvested biomass. Since plants accumulate Si in the form of readily soluble phytoliths, plant-derived biochar is considered as a Si source for Si accumulator crops. In addition to its beneficial effects on soil fertility and carbon sequestration, biochar is a promising cost-effective and environmentally friendly alternative to conventional Si amendments. Here, we study the impact of biochar materials with different phytolith concentrations on the bioavailability of Si in soils differing in weathering stage, and its effect on cotton biomass and Si mineralomass. Two biochar materials were used: Miscanthus x giganteus (Si concentration: 34.6 g/kg) and soft woody material (Si concentration: 0.9 g/kg). A conventional wollastonite (CaSiO3) treatment was carried for comparison purpose. The concentration of bioavailable Si was determined through 0.01 M CaCl2 extraction. Biochars were incorporated at the rate of 3% (w/w) in two soils: a slightly weathered Cambisol and a highly weathered Nitisol. The Miscanthus biochar ability to release bioavailable Si in the Cambisol (CaCl2 extractable Si/total Si concentration) is significantly smaller (0.9%) than the one of wollastonite (5.2%). In the highly weathered Nitisol, the Miscanthus biochar ability to release bioavailable Si is much larger (1.4%) than that of wollastonite (0.7%). Miscanthus biochar significantly increases the cotton biomass and Si mineralomass relative to soft wood biochar. The increase is larger in the highly weathered Nitisol than in the slightly weathered Cambisol. Principal component analyses and linear regression show that both the larger release rate of bioavailable Si and CEC are the main factors responsible for the increase of cotton biomass after Miscanthus biochar amendment. Thus, biochar made from Si high-accumulator Miscanthus can be considered as an alternative to wollastonite for supplying bioavailable Si in the highly weathered Nitisol. This beneficial effect is added to increased soil fertility and soil organic carbon content. Key word: bioavailable silicon, high-accumulator biochar, highly weathered soil, Si fertilizer, biomass, silicon cycle

40 CFR Table 1b to Subpart Zzzz of... - Operating Limitations for Existing, New, and Reconstructed SI 4SRB Stationary RICE >500 HP...

Code of Federal Regulations, 2013 CFR

2013-07-01

..., New, and Reconstructed SI 4SRB Stationary RICE >500 HP Located at a Major Source of HAP Emissions 1b... Limitations for Existing, New, and Reconstructed SI 4SRB Stationary RICE >500 HP Located at a Major Source of... 15 percent O2 and using NSCR; a. maintain your catalyst so that the pressure drop across the catalyst...

40 CFR Table 1b to Subpart Zzzz of... - Operating Limitations for Existing, New, and Reconstructed SI 4SRB Stationary RICE >500 HP...

Code of Federal Regulations, 2014 CFR

2014-07-01

..., New, and Reconstructed SI 4SRB Stationary RICE >500 HP Located at a Major Source of HAP Emissions 1b... Limitations for Existing, New, and Reconstructed SI 4SRB Stationary RICE >500 HP Located at a Major Source of... 15 percent O2 and using NSCR; a. maintain your catalyst so that the pressure drop across the catalyst...

Thermally stable ohmic contacts to n-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts

NASA Astrophysics Data System (ADS)

Murakami, Masanori; Price, W. H.; Norcott, M.; Hallali, P.-E.

1990-09-01

The effects of Si or Ge addition to NiInW ohmic contacts on their electrical behavior were studied, where the samples were prepared by evaporating Ni(Si) or Ni(Ge) pellets with In and W and annealed by a rapid thermal annealing method. An addition of Si affected the contact resistances of NiInW contacts: the resistances decreased with increasing the Si concentrations in the Ni(Si) pellets and the lowest value of ˜0.1 Ω mm was obtained in the contact prepared with the Ni-5 at. % Si pellets after annealing at temperatures around 800 °C. The contact resistances did not deteriorate during isothermal annealing at 400 °C for more than 100 h, far exceeding process requirements for self-aligned GaAs metal-semiconductor field-effect-transistor devices. In addition, the contacts were compatible with TiAlCu interconnects which have been widely used in the current Si process. Furthermore, the addition of Si to the NiInW contacts eliminated an annealing step for activation of implanted dopants and low resistance (˜0.2 Ω mm) contacts were fabricated for the first time by a ``one-step'' anneal. In contrast, an addition of Ge to the NiInW contacts did not significantly reduce the contact resistances.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

Silicon amendment to rice plants impairs sucking behaviors and population growth in the phloem feeder Nilaparvata lugens (Hemiptera: Delphacidae).

PubMed

Yang, Lang; Han, Yongqiang; Li, Pei; Wen, Lizhang; Hou, Maolin

2017-04-24

The brown planthopper (BPH), Nilaparvata lugens (Stål), is a migratory and destructive sucking insect pest of rice. Silicon (Si) amendment to plants can confer enhanced resistance to herbivores and is emerging as a novel approach for pest management. In the present study, we tested the effects of Si addition at 0.16 (low) and 0.32 (high) g Si/kg soil on sucking behaviors and population growth in BPH. Si amendment increased Si content in rice stems and extended non-probing event and phloem puncture followed by sustained phloem ingestion over that in the no-Si-addition control. High Si addition rate prolonged the stylet pathway and the time needed to reach the first phloem puncture, shortened durations of phloem puncture and phloem ingestion, and decreased the proportion of individuals that produced sustained phloem ingestion. BPH female feeding on and preference for plants with the high Si addition rate were also reduced. As a result, Si application significantly decreased BPH population growth rates while increased population doubling time. These results indicate that Si amendment, especially at the high rate, confers enhanced rice plant resistance to BPH through impairment of BPH feeding. Our results highlight the potential of Si amendment as an alternative for BPH management.

Reduction of plasma density in the Helicity Injected Torus with Steady Inductance experiment by using a helicon pre-ionization source.

PubMed

Hossack, Aaron C; Firman, Taylor; Jarboe, Thomas R; Prager, James R; Victor, Brian S; Wrobel, Jonathan S; Ziemba, Timothy

2013-10-01

A helicon based pre-ionization source has been developed and installed on the Helicity Injected Torus with Steady Inductance (HIT-SI) spheromak. The source initiates plasma breakdown by injecting impurity-free, unmagnetized plasma into the HIT-SI confinement volume. Typical helium spheromaks have electron density reduced from (2-3) × 10(19) m(-3) to 1 × 10(19) m(-3). Deuterium spheromak formation is possible with density as low as 2 × 10(18) m(-3). The source also enables HIT-SI to be operated with only one helicity injector at injector frequencies above 14.5 kHz. A theory explaining the physical mechanism driving the reduction of breakdown density is presented.

Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

NASA Astrophysics Data System (ADS)

Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

2017-12-01

In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits

DTIC Science & Technology

2008-12-01

and negative gate voltages with and without elevated drain voltages for FDC TFTs. Extending techniques used to localize hot electron degradation...in MOSFETs, experiments in our lab have localized the degradation of a-Si:H to the gate dielectric/a-Si:H channel interface [Shringarpure, et al...saturation, increased drain source current measured with the source and drain reversed indicates localization of ΔVth to the gate dielectric/amorphous

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

NASA Astrophysics Data System (ADS)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

2016-01-01

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

Impact of SiNx capping on the formation of source/drain contact for In-Ga-Zn-O thin film transistor with self-aligned gate

NASA Astrophysics Data System (ADS)

Oh, Himchan; Pi, Jae-Eun; Hwang, Chi-Sun; Kwon, Oh-Sang

2017-12-01

Self-aligned gate structures are preferred for faster operation and scaling down of thin film transistors by reducing the overlapped region between source/drain and gate electrodes. Doping on source/drain regions is essential to fabricate such a self-aligned gate thin film transistor. For oxide semiconductors such as In-Ga-Zn-O, SiNx capping readily increases their carrier concentration. We report that the SiNx deposition temperature and thickness significantly affect the device properties, including threshold voltage, field effect mobility, and contact resistance. The reason for these variations in device characteristics mainly comes from the extension of the doped region to the gated area after the SiNx capping step. Analyses on capacitance-voltage and transfer length characteristics support this idea.

Conceptual design of the time-of-flight backscattering spectrometer MIRACLES, at the European Spallation Source

NASA Astrophysics Data System (ADS)

Tsapatsaris, N.; Lechner, R. E.; Markó, M.; Bordallo, H. N.

2016-08-01

In this work, we present the conceptual design of the backscattering time-of-flight spectrometer MIRACLES approved for construction at the long-pulse European Spallation Source (ESS). MIRACLES's unparalleled combination of variable resolution, high flux, extended energy, and momentum transfer (0.2-6 Å-1) ranges will open new avenues for neutron backscattering spectroscopy. Its remarkable flexibility can be attributed to 3 key elements: the long-pulse time structure and low repetition rate of the ESS neutron source, the chopper cascade that tailors the moderator pulse in the primary part of the spectrometer, and the bent Si(111) analyzer crystals arranged in a near-backscattering geometry in the secondary part of the spectrometer. Analytical calculations combined with instrument Monte-Carlo simulations show that the instrument will provide a variable elastic energy resolution, δ(ħ ω), between 2 and 32 μeV, when using a wavelength of λ ≈ 6.267 Å (Si(111)-reflection), with an energy transfer range, ħ ω, centered at the elastic line from -600 to +600 μeV. In addition, when selecting λ ≈ 2.08 Å (i.e., the Si(333)-reflection), δ(ħ ω) can be relaxed to 300 μeV and ħ ω from about 10 meV in energy gain to ca -40 meV in energy loss. Finally, the dynamic wavelength range of MIRACLES, approximately 1.8 Å, can be shifted within the interval of 2-20 Å to allow the measurement of low-energy inelastic excitations.

Conceptual design of the time-of-flight backscattering spectrometer, MIRACLES, at the European Spallation Source.

PubMed

Tsapatsaris, N; Lechner, R E; Markó, M; Bordallo, H N

2016-08-01

In this work, we present the conceptual design of the backscattering time-of-flight spectrometer MIRACLES approved for construction at the long-pulse European Spallation Source (ESS). MIRACLES's unparalleled combination of variable resolution, high flux, extended energy, and momentum transfer (0.2-6 Å(-1)) ranges will open new avenues for neutron backscattering spectroscopy. Its remarkable flexibility can be attributed to 3 key elements: the long-pulse time structure and low repetition rate of the ESS neutron source, the chopper cascade that tailors the moderator pulse in the primary part of the spectrometer, and the bent Si(111) analyzer crystals arranged in a near-backscattering geometry in the secondary part of the spectrometer. Analytical calculations combined with instrument Monte-Carlo simulations show that the instrument will provide a variable elastic energy resolution, δ(ħ ω), between 2 and 32 μeV, when using a wavelength of λ ≈ 6.267 Å (Si(111)-reflection), with an energy transfer range, ħ ω, centered at the elastic line from -600 to +600 μeV. In addition, when selecting λ ≈ 2.08 Å (i.e., the Si(333)-reflection), δ(ħ ω) can be relaxed to 300 μeV and ħ ω from about 10 meV in energy gain to ca -40 meV in energy loss. Finally, the dynamic wavelength range of MIRACLES, approximately 1.8 Å, can be shifted within the interval of 2-20 Å to allow the measurement of low-energy inelastic excitations.

The improved mechanical properties of β-CaSiO3 bioceramics with Si3N4 addition.

PubMed

Pan, Ying; Zuo, Kaihui; Yao, Dongxu; Yin, Jinwei; Xin, Yunchuan; Xia, Yongfeng; Liang, Hanqin; Zeng, Yuping

2015-03-01

The motivation of this study is to investigate the effect of Si3N4 addition on the sinterability of β-CaSiO3 ceramics. β-CaSiO3 ceramics with different content of Si3N4 were prepared at the sintering temperature ranging from 1000°C to 1150°C. The results showed that Si3N4 can be successfully used as sintering additive by being oxidized to form SiO2. The β-CaSiO3 ceramics with 3wt% Si3N4 sintered at 1100°C revealed flexural strength, hardness and fracture toughness of 157.2MPa, 4.4GPa and 2.3MPam(1/2) respectively, which was much higher than that of pure β-CaSiO3 ceramics (41.1MPa, 1.0GPa, 1.1MPam(1/2)). XRD analysis and SEM observation indicated that the main phase maintained to be β-phase after sintering. Copyright © 2015 Elsevier Ltd. All rights reserved.

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Shohet, J. L.; Ryan, E. T.

2014-11-17

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do notmore » have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.« less

Recent Developments in Ultra High Temperature Ceramics at NASA Ames

NASA Technical Reports Server (NTRS)

Johnson, Sylvia M.; Gasch, Matt; Lawson, John W.; Gusman, Michael I.; Stackpole, Margaret M.

2009-01-01

NASA Ames is pursuing a variety of approaches to modify and control the microstructure of UHTCs with the goal of improving fracture toughness, oxidation resistance and controlling thermal conductivity. The overall goal is to produce materials that can perform reliably as sharp leading edges or nose tips in hypersonic reentry vehicles. Processing approaches include the use of preceramic polymers as the SiC source (as opposed to powder techniques), the addition of third phases to control grain growth and oxidation, and the use of processing techniques to produce high purity materials. Both hot pressing and field assisted sintering have been used to make UHTCs. Characterization of the mechanical and thermal properties of these materials is ongoing, as is arcjet testing to evaluate performance under simulated reentry conditions. The preceramic polymer approach has generated a microstructure in which elongated SiC grains grow in the form of an in-situ composite. This microstructure has the advantage of improving fracture toughness while potentially improving oxidation resistance by reducing the amount and interconnectivity of SiC in the material. Addition of third phases, such as Ir, results in a very fine-grained microstructure, even in hot-pressed samples. The results of processing and compositional changes on microstructure and properties are reported, along with selected arcjet results.

The morphology, proliferation rate, and population doubling time factor of adipose-derived mesenchymal stem cells cultured on to non-aqueous SiO2, TiO2, and hybrid sol-gel-derived oxide coatings.

PubMed

Marycz, Krzysztof; Krzak-Roś, Justyna; Donesz-Sikorska, Anna; Śmieszek, Agnieszka

2014-11-01

In recent years, much attention has been paid to the development of tissue engineering and regenerative medicine, especially when stem cells of various sources are concerned. In addition to the interest in mesenchymal stem cells isolated from bone marrow, recently more consideration has been given to stem cells isolated from adipose tissue (AdMSCs), due to their less invasive method of collection as well as their ease of isolation and culture. However, the development of regenerative medicine requires both the application of biocompatible material and the stem cells to accelerate the regeneration. In this study, we investigated the morphology, proliferation rate index (PRi), and population doubling time factor of adipose-derived mesenchymal stem cells cultured on non-aqueous sol-gel-derived SiO2, TiO2, and SiO2/TiO2 oxide coatings. The results indicated an increase in PRi of AdMSCs when cultured on to titanium dioxide, suggesting its high attractiveness for AdMSCs. In addition, the proper morphology and the shortest doubling time of AdMSCs were observed when cultured on titanium dioxide coating. © 2014 Wiley Periodicals, Inc.

Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

NASA Astrophysics Data System (ADS)

Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

2015-02-01

Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

Effects of Ti and La Additions on the Microstructures and Mechanical Properties of B-Refined and Sr-Modified Al-11Si Alloys

NASA Astrophysics Data System (ADS)

Li, Chenlin; Pan, Ye; Lu, Tao; Jing, Lijun; Pi, Jinhong

2018-03-01

The effects of Ti and La additions on the microstructures and mechanical properties of B-refined and Sr-modified Al-11Si alloys were investigated in the present work. The interactions among Ti, La, B and Sr elements were discussed employing microstructure observation, thermal analysis and tensile test, respectively. It was found that the addition of 0.05 wt% B induces a transformation of eutectic Si from finely fibrous to coarsely plate-like morphology in the Al-11Si alloy with 0.02 wt%Sr modification, owing to the poisoning of IIT mechanism, and the eutectic Si grows only with TPRE mechanism. Both titanium and lanthanum can neutralize the co-poisoning effect between Sr and B in the Al-11Si alloy, but the neutralizing effect of La is dependent on the addition sequence. The combinative addition of La and B elements promotes the effective refinement of α-Al grains, but an inhomogeneous modification of eutectic Si phases is also observed, leading to a slightly decrease in the elongation.

Oxidation of Ca-α-SiAlON Powders Prepared by Combustion Synthesis

PubMed Central

Li, Jinfu; Li, Zhongmin; Wang, Enhui; Wang, Zhanjun; Yin, Xiaowei; Zhang, Zuotai

2015-01-01

The oxidation of Ca-α-SiAlON synthesized by the combustion synthesis (CS) method with different additives was investigated in air atmosphere using thermogravimetric (TG) analysis in a temperature range from 1453 K to 1653 K. The experimental results indicated that oxidation was controlled by mixed chemical and diffusion steps. The oxidation products by XRD analysis were composed of SiO2 and CaAl2Si2O8 at low oxidation temperature, whereas the SiO2-Al2O3-CaO ternary glassy phase was formed at elevated temperature. The deviation of oxidation resistance from each sample may be due to the morphological difference brought about by different additive additions. This study reveals the effects of additives on the oxidation resistance of synthesized Ca-α-SiAlON powders. PMID:28793657

Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

NASA Astrophysics Data System (ADS)

Kayiranga, Thierry

Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system complexity. This report investigates the AIN-qZSI and present solutions to aforementioned issues.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices

PubMed Central

Suzuki, Masamichi

2012-01-01

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT) of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al) atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process. PMID:28817057

Polysilicic acid gel method derived V2O5/SiO2 composite materials: Synthesis and characterization

NASA Astrophysics Data System (ADS)

Wang, Dawei; Zhou, Linzong; Feng, Xiaofei; Zhao, Ning; Yang, Bin

2017-01-01

The V2O5/SiO2 composite was prepared by a sol-gel method followed a sintering procedure. The low-cost Na2SiO3•9H2O was used as silicon source, while NH4VO3 was used as vanadium source. By adding NH4VO3 to Na2SiO3 solution and adjusting the mixture's pH with saturated (NH4)2SO4 solution the polysilicic acid gel was formed to give a homogeneous gel composite with VO3-well-distributed in it. The gel composite was dried at 100 °C to give the xerogel, then the xerogel was calcined in air to obtain the V2O5/SiO2 composite. The V2O5/SiO2 composites were characterized by SEM analysis, FT-IR spectroscopy and powder X-ray diffractions.

The Stellar Imager (SI) Project: Resolving Stellar Surfaces, Interiors, and Magnetic Activity

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth G.; Schrijver, K.; Karovska, M.

2007-01-01

The Stellar Imager (SI) is a UV/Optical. Space-Based Interferometer designed to enable 0.1 milli-arcsec (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. The science of SI focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. Its prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. In this paper we discuss the science goals, technology needs, and baseline design of the SI mission.

Using mineral geochemistry to decipher slab, mantle, and crustal input in the generation of high-Mg andesites and basaltic andesites from the northern Cascade Arc

USGS Publications Warehouse

Sas, May; DeBari, Susan; Clynne, Michael A.; Rusk, Brian G.

2017-01-01

To better understand the role of slab melt in the petrogenesis of North Cascades magmas, this study focuses on petrogenesis of high-Mg lavas from the two northernmost active volcanoes in Washington. High-Mg andesites (HMA) and basaltic andesites (HMBA) in the Cascade Arc have high Mg# [molar Mg/(Mg+Fe2+)] relative to their SiO2 contents, elevated Nd/Yb, and are Ni- and Cr-enriched. The rock units examined here include the Tarn Plateau HMBA (51.8–54.0 wt% SiO2, Mg# 68–70) and Glacier Creek HMA (58.3–58.7 wt% SiO2, Mg# 63–64) from the Mount Baker Volcanic Field, and the Lightning Creek HMBA (54.8–54.6 SiO2, Mg# 69–73) from Glacier Peak. This study combines major and trace element compositions of minerals and whole rocks to test several petrogenetic hypotheses and to determine which, if any, are applicable to North Cascades HMA and HMBA. In the Tarn Plateau HMBA, rare earth element (REE) equilibrium liquids calculated from clinopyroxene compositions have high Nd/Yb that positively correlates with Mg#. This correlation suggests an origin similar to that proposed for Aleutian adakites, where intermediate, high Nd/Yb slab-derived melts interact with the overlying mantle to become Mg-rich, and subsequently mix with low Nd/Yb, mantle-derived mafic magmas with lower Mg#. In the Glacier Creek HMA, elevated whole-rock MgO and SiO2 contents resulted from accumulation of xenocrystic olivine and differentiation processes, respectively, but the cause of high Nd/Yb is less clear. However, high whole-rock Sr/P (fluid mobile/fluid immobile) values indicate a mantle source that was fluxed by an enriched, hydrous slab component, likely producing the observed high Nd/Yb REE signature. The Lightning Creek HMBA is a hybridized rock unit with at least three identifiable magmatic components, but only one of which has HMA characteristics. Cr and Mg contents in Cr-spinel and olivine pairs in this HMA component suggest that its source is a strongly depleted mantle, and high whole-rock Sr/P values indicate mantle melting that was induced through hydration, likely adding the component responsible for the observed high Nd/Yb REE pattern. The elevated SiO2 contents (54.6 wt%) of the HMA component resulted from differentiation or high degrees of partial melting of ultramafic material through the addition of H2O. Therefore the Lightning Creek HMBA is interpreted to have originated from a refractory mantle source that underwent melting through interaction with an enriched slab component. Our results indicate that in addition to slab-derived fluids, slab-derived melts also have an important role in the production of HMA and HMBA in the north Cascade Arc.

Synthesis and characterization of group IV semiconductor nanowires by vapor-liquid-solid growth

NASA Astrophysics Data System (ADS)

Lew, Kok-Keong

There is currently intense interest in one-dimensional nanostructures, such as nanotubes and nanowires, due to their potential to test fundamental concepts of dimensionality and to serve as building blocks for nanoscale devices. Vapor-liquid-solid (VLS) growth, which is one of the most common fabrication methods, has been used to produce single crystal semiconductor nanowires such as silicon (Si), germanium (Ge), and gallium arsenide (GaAs). In the VLS growth of Group IV semiconductor nanowires, a metal, such as gold (Au) is used as a catalyst agent to nucleate whisker growth from a Si-containing (silane (SIH4)) or Ge-containing vapor (germane (GeH 4)). Au and Si/Ge form a liquid alloy that has a eutectic temperature of around 360°C, which, upon supersaturation, nucleates the growth of a Si or Ge wire. The goal of this work is to develop a more fundamental understanding of VLS growth kinetics and intentional doping of Group IV semiconductor nanowires in order to better control the properties of the nanowires. The fabrication of p-type and n-type Si nanowires will be studied via the addition of dopant gases such as diborane (B2H 6), trimethylboron (TMB), and phosphine (PH3) during growth. The use of gaseous dopant sources provides more flexibility in growth, particularly for the fabrication of p-n junctions and structures with axial dopant variations (e.g. p+-p- p+). The study is then extended to fabricate SiGe alloy nanowires by mixing SiH4 and GeH4. Bandgap engineering in Si/SiGe heterostructures can lead to novel devices with improved performance compared to those made entirely of Si. The scientific findings will lead to a better understanding of the fabrication of Si/SiGe axial and radial heterostructure nanowires for functional nanowire device structures, such as heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). Eventually, the central theme of this research is to provide a scientific knowledge base and foundation for the design of Si, Ge, and SiGe nanostructures that will be of importance in nanoscale device applications.

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma

NASA Astrophysics Data System (ADS)

Li, Xiaosong; Wang, Nan; Yang, Jinhua; Wang, Younian; Zhu, Aimin

2011-10-01

Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition

On the Relation of Silicates and SiO Maser in Evolved Stars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jiaming; Jiang, Biwei, E-mail: bjiang@bnu.edu.cn

2017-04-01

The SiO molecule is one of the candidates for the seed of silicate dust in the circumstellar envelope of evolved stars, but this opinion is challenged. In this work we investigate the relation of the SiO maser emission power and the silicate dust emission power. With both our own observation by using the PMO/Delingha 13.7 m telescope and archive data, a sample is assembled of 21 SiO v  = 1, J  = 2 − 1 sources and 28 SiO v  = 1, J  = 1 − 0 sources that exhibit silicate emission features in the ISO /SWS spectrum as well. The analysis of their SiO maser and silicatemore » emission power indicates a clear correlation, which is not against the hypothesis that the SiO molecules are the seed nuclei of silicate dust. On the other hand, no correlation is found between SiO maser and silicate crystallinity, which may imply that silicate crystallinity does not correlate with mass-loss rate.« less

Differences between mono-generic and mixed diatom silicon isotope compositions trace present and past nutrient utilisation off Peru

NASA Astrophysics Data System (ADS)

Doering, Kristin; Ehlert, Claudia; Grasse, Patricia; Crosta, Xavier; Fleury, Sophie; Frank, Martin; Schneider, Ralph

2016-03-01

In this study we combine for the first time silicon (Si) isotope compositions of small mixed diatom species (δ30SibSiO2) and of large handpicked mono-generic (i.e. genus = Coscinodiscus) diatom samples (δ30SiCoscino) with diatom assemblages extracted from marine sediments in the Peruvian upwelling region in order to constrain present and past silicate utilisation. The extension of a previous core-top data set from the Peruvian shelf demonstrates that δ30SiCoscino values record near-complete Si utilisation, as these are similar to the isotopic composition of the subsurface source waters feeding the upwelling. In contrast, the δ30SibSiO2 of small mixed diatom species increase southward along the shelf as well as towards the shore. We attribute highest δ30SibSiO2 values partly to transient iron limitation but primarily to the gradual increase of Si isotope fractionation within the seasonal diatom succession, which are mainly recorded by small diatom species during intense bloom events. In contrast, lower δ30SibSiO2 values are related to initial Si isotope utilisation during periods of weak upwelling, when low Si(OH)4 concentrations do not permit intense blooms and small diatom species record substantially lower δ30Si signatures. As such, we propose that the intensity of the upwelling can be deduced from the offset between δ30SibSiO2 and δ30SiCoscino (Δ30Sicoscino-bSiO2), which is low for strong upwelling conditions and high for prevailing weak upwelling. We apply the information extracted from surface sediments to generate a record of the present-day main upwelling region covering the past 17,700 years and find that this location has also been characterized by a persistent offset (Δ30Sicoscino-bSiO2). By comparison with the diatom assemblages we show that the coastal upwelling system changed markedly between weak and strong upwelling conditions. In addition, our model calculations to quantify species-specific Si isotope fractionation effects based on the diatom assemblages indicate an overall minor influence that cannot explain the high amplitude in the measured δ30SibSiO2 record.

Use of a Si(Li) detector as β spectrometer.

PubMed

Dryák, P; Kovář, P

2014-05-01

The aim of this work is to demonstrate the capability of a Si(Li) detector for the measurement of β spectra, despite the energy absorption in air and in the Be window. A simple source holder fixes the source on the symmetry axis at 3mm from the detector window. The β-sources are produced by evaporation on a plastic backing plate. Absorbing materials between the source and the sensitive volume of the detector are 3 mm of air, a Be window, 0.1 μm Si and 20 nm of gold. A model of the detector was created for β spectra simulation using the MCNP 4A code. Experimental spectra of (14)C, (147)Pm, (204)Tl, (90)Sr/(90)Y were compared with simulated spectra. © 2013 Published by Elsevier Ltd.

Enhancing scatterometry CD signal-to-noise ratio for 1x logic and memory challenges

NASA Astrophysics Data System (ADS)

Shaughnessy, Derrick; Krishnan, Shankar; Wei, Lanhua; Shchegrov, Andrei V.

2013-04-01

The ongoing transition from 2D to 3D structures in logic and memory has led to an increased adoption of scatterometry CD (SCD) for inline metrology. However, shrinking device dimensions in logic and high aspect ratios in memory represent primary challenges for SCD and require a significant breakthrough in improving signal-to-noise performance. We present a report on the new generation of SCD technology, enabled by a new laser-driven plasma source. The developed light source provides several key advantages over conventional arc lamps typically used in SCD applications. The plasma color temperature of the laser driven source is considerably higher than available with arc lamps resulting in >5X increase in radiance in the visible and >10X increase in radiance in the DUV when compared to sources on previous generation SCD tools while maintaining or improving source intensity noise. This high radiance across such a broad spectrum allows for the use of a single light source from 190-1700nm. When combined with other optical design changes, the higher source radiance enables reduction of measurement box size of our spectroscopic ellipsometer from 45×45um box to 25×25um box without compromising signal to noise ratio. The benefits for 1×nm SCD metrology of the additional photons across the DUV to IR spectrum have been found to be greater than the increase in source signal to noise ratio would suggest. Better light penetration in Si and poly-Si has resulted in improved sensitivity and correlation breaking for critical parameters in 1xnm FinFET and HAR flash memory structures.

Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

PubMed

Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

2016-11-01

Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Temperature dependence of 63Ni-Si betavoltaic microbattery.

PubMed

Yunpeng, Liu; Xiao, Guo; Zhangang, Jin; Xiaobin, Tang

2018-05-01

This paper theoretically presented the temperature effects on the 63 Ni-Si betavoltaic microbattery irradiated by a source with different thicknesses and activity densities at a temperature range 170-340K. Temperature dependences of the monolayer and interbedded 63 Ni-Si betavoltaics at 213.15-333.15K were tested with respect to calculations. Results showed that the higher the thickness, activity density, and average energy of the source, the lower is the betavoltaic performance responds to temperature. With the increase in temperature, the V oc and P max of the upper, lower, and interbedded betavoltaics decreased linearly at low temperatures and decreased exponentially at high temperatures in the experiment. As predicted, the measured V oc and P max sensitivities of the lower betavoltaic with 4.90mCi/cm 2 63 Ni, -2.230mV/K and -1.132%, respectively, were lower than those with 1.96mCi/cm 2 63 Ni, -2.490mV/K and -1.348%, respectively. Compared with the calculated results, the prepared betavoltaics had lower V oc sensitivity and higher P max sensitivity. In addition, the measured V oc sensitivity of the interbedded betavoltaic in series is equal to the sum of those of the upper and lower ones as predicted. Moreover, the measured P max sensitivity of the interbedded betavoltaic is equal to the average of those of the two monolayers. Copyright © 2018 Elsevier Ltd. All rights reserved.

Silicon isotopes reveal recycled altered oceanic crust in the mantle sources of Ocean Island Basalts

NASA Astrophysics Data System (ADS)

Pringle, Emily A.; Moynier, Frédéric; Savage, Paul S.; Jackson, Matthew G.; Moreira, Manuel; Day, James M. D.

2016-09-01

The study of silicon (Si) isotopes in Ocean Island Basalts (OIB) has the potential to discern between different models for the origins of geochemical heterogeneities in the mantle. Relatively large (∼several per mil per atomic mass unit) Si isotope fractionation occurs in low-temperature environments during biochemical and geochemical precipitation of dissolved Si, where the precipitate is preferentially enriched in the lighter isotopes relative to the dissolved Si. In contrast, only a limited range (∼tenths of a per mil) of Si isotope fractionation has been observed from high-temperature igneous processes. Therefore, Si isotopes may be useful as tracers for the presence of crustal material within OIB mantle source regions that experienced relatively low-temperature surface processes in a manner similar to other stable isotope systems, such as oxygen. Characterizing the isotopic composition of the mantle is also of central importance to the use of the Si isotope system as a basis for comparisons with other planetary bodies (e.g., Moon, Mars, asteroids). Here we present the first comprehensive suite of high-precision Si isotope data obtained by MC-ICP-MS for a diverse suite of OIB. Samples originate from ocean islands in the Pacific, Atlantic, and Indian Ocean basins and include representative end-members for the EM-1, EM-2, and HIMU mantle components. On average, δ30Si values for OIB (-0.32 ± 0.09‰, 2 sd) are in general agreement with previous estimates for the δ30Si value of Bulk Silicate Earth (-0.29 ± 0.07‰, 2 sd; Savage et al., 2014). Nonetheless, some small systematic variations are present; specifically, most HIMU-type (Mangaia; Cape Verde; La Palma, Canary Islands) and Iceland OIB are enriched in the lighter isotopes of Si (δ30Si values lower than MORB), consistent with recycled altered oceanic crust and lithospheric mantle in their mantle sources.

Granger causal time-dependent source connectivity in the somatosensory network

NASA Astrophysics Data System (ADS)

Gao, Lin; Sommerlade, Linda; Coffman, Brian; Zhang, Tongsheng; Stephen, Julia M.; Li, Dichen; Wang, Jue; Grebogi, Celso; Schelter, Bjoern

2015-05-01

Exploration of transient Granger causal interactions in neural sources of electrophysiological activities provides deeper insights into brain information processing mechanisms. However, the underlying neural patterns are confounded by time-dependent dynamics, non-stationarity and observational noise contamination. Here we investigate transient Granger causal interactions using source time-series of somatosensory evoked magnetoencephalographic (MEG) elicited by air puff stimulation of right index finger and recorded using 306-channel MEG from 21 healthy subjects. A new time-varying connectivity approach, combining renormalised partial directed coherence with state space modelling, is employed to estimate fast changing information flow among the sources. Source analysis confirmed that somatosensory evoked MEG was mainly generated from the contralateral primary somatosensory cortex (SI) and bilateral secondary somatosensory cortices (SII). Transient Granger causality shows a serial processing of somatosensory information, 1) from contralateral SI to contralateral SII, 2) from contralateral SI to ipsilateral SII, 3) from contralateral SII to contralateral SI, and 4) from contralateral SII to ipsilateral SII. These results are consistent with established anatomical connectivity between somatosensory regions and previous source modeling results, thereby providing empirical validation of the time-varying connectivity analysis. We argue that the suggested approach provides novel information regarding transient cortical dynamic connectivity, which previous approaches could not assess.

Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Lu, Haifeng; Costinett, Daniel J.

Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition andmore » load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).« less

Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors

DOE PAGES

Zhang, Zheyu; Lu, Haifeng; Costinett, Daniel J.; ...

2016-12-29

Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition andmore » load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).« less

Compared production behavior of borax and unborax premixed SiC reinforcement Al7Si-Mg-TiB alloys composites with semi-solid stir casting method

NASA Astrophysics Data System (ADS)

Haryono, M. B.; Sulardjaka, Nugroho, Sri

2016-04-01

The present study was aimed to investigate the effect of borax additive on physical and mechanical properties of Al7Si-Mg-TiB with the reinforcement of silicon carbide. In this case, the different weight percentage from the reinforcement of SiC (10, 15, and 20% wt), and the borax additive (ratio 1:4) were homogenously added into the matrix by employing the semi-solid stir casting method at the temperature of 590°C. Al7Si-Mg-TiB melted in an electric resistance furnace at 800°C for 25 minutes and the holding time of 5 minutes; SiC was stirred with borax inside the chamber and heated at the temperature of 250°C for 25 minutes. Then, it melted by lowing the temperature into 590°C. The SiC-borax mixture was added into the electric resistance furnace, and automatically stirred by the stirrer at a constant speed (500 rpm for 3 minutes) in the composite A17Si-Mg-TiB. It melted when heated at 750°C for 17minutes,then, casting was performed on the prepared mould. The characterizations of Al7Si-Mg-TiB-SiC/borax were porosity, hardness, and microstructure on the Al7Si-Mg-TiB-SiC/ borax. The porosity of AMC tended to increase along with the increaseof the wt% SiC (1.4%-3.6%); however, borax additive underwent a decrease in porosity (0.14%-1.3%). Further, hardness tended to improve along with the increase of wt% SiC. The unboraxmixture had 79,6 HRB up to 94 HRB. Whereas, the borax additive mixture had 105,8 HRB up to 121 HRB.

Design and simulation of betavoltaic angle sensor Based on ⁶³Ni-Si.

PubMed

Ghasemi Nejad, Gholam Reza; Rahmani, Faezeh

2016-01-01

A theoretical design and simulation of betavoltaic angle sensor (beta-AS) based on (63)Ni-Si using MCNP code is presented in this article. It can measure the full angle of 0-360° in the temperature range of 233-353 K. Beta-AS is composed of semicircular (63)Ni as the beta source, which rotates along the circular (four-quadrant) surface of Si as a semiconductor (in p-n structure), so that the change in the source angle in relation to Si surface can be measured based on the changes in V(oc) observed in each quadrant of Si. For better performance, characteristics of Si and (63)Ni have been optimized: N(D) and N(A) values of 8e19 and 4e18 cm(-3) (donor and acceptor doping concentration in Si, respectively), source thickness and activity of 1.5 µm and 18 mCi, respectively. The relation between angle and V(oc) is also investigated. The maximum difference between measured and real values of angle (the worst case, i.e., 0.18° for the angle of 45°) occurs at 233 K. It has been shown that sensitivity of the sensor decreases with an increase of angle. The results also show that the change in activity does not affect the sensitivity. Copyright © 2015 Elsevier Ltd. All rights reserved.

Effect of Alloying Elements on Nb-Rich Portion of Nb-Si-X Ternary Systems and In Situ Crack Observation of Nb-Si-Based Alloys

NASA Astrophysics Data System (ADS)

Miura, Seiji; Hatabata, Toru; Okawa, Takuya; Mohri, Tetsuo

2014-03-01

To find a new route for microstructure control and to find additive elements beneficial for improving high-temperature strength, a systematic investigation is performed on hypoeutectic Nb-15 at. pct Si-X ternary alloys containing a transition element, Fe, Co, Ni, Cu, Ru, Rh, Pd, Re, Os, Ir, Pt, or Au. Information on phase equilibrium is classified in terms of phase stability of silicide phases, α Nb5Si3, Nb4SiX, and Nb3Si, and the relationship between microstructure and mechanical properties both at room temperature and high temperature is investigated. All the additive elements are found to stabilize either α Nb5Si3 or Nb4SiX but destabilize Nb3Si. A microstructure of Nbss/α Nb5Si3 alloy composed of spheroidized α Nb5Si3 phase embedded in the Nbss matrix is effective for toughening, regardless of the initial as-cast microstructure. Also the plastic deformation of Nbss dendrites may effectively suppress the propagation of longer cracks. High-temperature strength of alloys is governed by the deformation of Nbss phase and increases with higher melting point additives.

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

PubMed

Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

2016-02-01

We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based photovoltaic devices.

CVD growth and properties of boron phosphide on 3C-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths acrossmore » the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) <011>BP||(100) <011>3C-SiC and (111)View the MathML sourceBP||(111)View the MathML source3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.« less

Design of Si0.5Ge0.5 based tunnel field effect transistor and its performance evaluation

NASA Astrophysics Data System (ADS)

Singh, Gurmeet; Amin, S. Intekhab; Anand, Sunny; Sarin, R. K.

2016-04-01

In this work, the performance comparison of two heterojunction PIN TFETs having Si channel and Si0.5Ge0.5 source with high-k (SiGe DGTFET HK) and hetero-gate dielectric (SiGe DGTFET HG) respectively with those of two homojunction Si based PIN (DGTFET HK and DGTFET HG) TFETs is performed. Similarly, by employing the technique of pocketing at source junction in above four PIN TFETs, the performances of resultant four PNPN TFETs (SiGe PNPN DGTFET HK, SiGe PNPN DGTFET HG, PNPN DGTFET HK and PNPN DGTFET HG) are also compared with each other. Due to lower tunnel resistance of SiGe based heterojunction PIN and PNPN TFETs, the DC parameters such as ON current, ON-OFF current ratio, average subthreshold slope are improved significantly as compared to Si based PIN and PNPN TFETs respectively. The output characteristics of HG architectures in Si based homojunction PIN and PNPN TFETs is observed to be identical to with respective Si based HK PIN and PNPN TFET architectures. However, the output characteristics of HG architectures in SiGe based heterojunction PIN and PNPN TFETs degrade as compared to their respective SiGe based HK PIN and PNPN TFET architectures. In ON state, SiGe based HK and HG PIN and PNPN TFETs have lower gate capacitance (Cgg) as compared to their respective Si based HK and HG PIN and PNPN TFETs. Moreover, HG architecture suppresses gate to drain capacitance (Cgd) and ambipolar conduction. Transconductance (gm) and cut off frequency (fT) is also observed to be higher for SiGe based PIN and PNPN TFETs.

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

NASA Astrophysics Data System (ADS)

Maruyama, Takahiro; Yamashita, Yutaka; Saida, Takahiro; Tanaka, Shin-ichiro; Naritsuka, Shigeya

2017-06-01

We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 °C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 °C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 °C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.

Microstructural characteristics and aging response of Zn-containing Al-Mg-Si-Cu alloy

NASA Astrophysics Data System (ADS)

Cai, Yuan-hua; Wang, Cong; Zhang, Ji-shan

2013-07-01

Al-Mg-Si-Cu alloys with and without Zn addition were fabricated by conventional ingot metallurgy method. The microstructures and properties were investigated using optical microscopy (OM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), tensile test, hardness test, and electrical conductivity measurement. It is found that the as-cast Al-Mg-Si-Cu-Zn alloy is composed of coarse dendritic grains, long needle-like β/δ-AlFeSi white intermetallics, and Chinese script-like α-AlFeSi compounds. During high temperature homogenization treatment, only harmful needle-like β-AlFeSi phase undergoes fragmentation and spheroidizing at its tips, and the destructive needle-like δ-phase does not show any morphological and size changes. Phase transitions from β-AlFeSi to α-AlFeSi and from δ-AlFeSi to β-AlFeSi are also not found. Zn addition improves the aging hardening response during the former aging stage and postpones the peak-aged hardness to a long aging time. In T4 condition, Zn addition does not obviously increase the yield strength and decrease the elongation, but it markedly improves paint-bake hardening response during paint-bake cycle. The addition of 0.5wt% Zn can lead to an increment of 99 MPa in yield strength compared with the value of 69 MPa for the alloy without Zn after paint-bake cycle.

Microprocessing of ITO and a-Si thin films using ns laser sources

NASA Astrophysics Data System (ADS)

Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

2005-06-01

Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

Effect of sintering temperature on physical, structural and optical properties of wollastonite based glass-ceramic derived from waste soda lime silica glasses

NASA Astrophysics Data System (ADS)

Almasri, Karima Amer; Sidek, Hj. Ab Aziz; Matori, Khamirul Amin; Zaid, Mohd Hafiz Mohd

The impact of different sintering temperatures on physical, optical and structural properties of wollastonite (CaSiO3) based glass-ceramics were investigated for its potential application as a building material. Wollastonite based glass-ceramics was provided by a conventional melt-quenching method and followed by a controlled sintering process. In this work, soda lime silica glass waste was utilized as a source of silicon. The chemical composition and physical properties of glass were characterized by using Energy Dispersive X-ray Fluorescence (EDXRF) and Archimedes principle. The Archimedes measurement results show that the density increased with the increasing of sintering temperature. The generation of CaSiO3, morphology, size and crystal phase with increasing the heat-treatment temperature were examined by field emission scanning electron microscopy (FESEM), Fourier transforms infrared reflection spectroscopy (FTIR), and X-ray diffraction (XRD). The average calculated crystal size gained from XRD was found to be in the range 60 nm. The FESEM results show a uniform distribution of particles and the morphology of the wollastonite crystal is in relict shapes. The appearance of CaO, SiO2, and Ca-O-Si bands disclosed from FTIR which showed the formation of CaSiO3 crystal phase. In addition to the calculation of the energy band gap which found to be increased with increasing sintering temperature.

Mg doped Li2FeSiO4/C nanocomposites synthesized by the solvothermal method for lithium ion batteries.

PubMed

Kumar, Ajay; Jayakumar, O D; Jagannath; Bashiri, Parisa; Nazri, G A; Naik, Vaman M; Naik, Ratna

2017-10-14

A series of porous Li 2 Fe 1-x Mg x SiO 4 /C (x = 0, 0.01, 0.02, 0.04) nanocomposites (LFS/C, 1Mg-LFS/C, 2Mg-LFS and 4Mg-LFS/C) have been synthesized via a solvo-thermal method using the Pluronic P123 polymer as an in situ carbon source. Rietveld refinement of the X-ray diffraction data of Li 2 Fe 1-x Mg x SiO 4 /C composites confirms the formation of the monoclinic P2 1 structure of Li 2 FeSiO 4 . The addition of Mg facilitates the growth of impurity-free Li 2 FeSiO 4 with increased crystallinity and particle size. Despite having the same percentage of carbon content (∼15 wt%) in all the samples, the 1Mg-LFS/C nanocomposite delivered the highest initial discharge capacity of 278 mA h g -1 (∼84% of the theoretical capacity) at the C/30 rate and also exhibited the best rate capability and cycle stability (94% retention after 100 charge-discharge cycles at 1C). This is attributed to its large surface area with a narrow pore size distribution and a lower charge transfer resistance with enhanced Li-ion diffusion coefficient compared to other nanocomposites.

The epidemiological information system of the French national electricity and gas company: the SI-EPI project.

PubMed

Goldberg, M; Chevalier, A; Imbernon, E; Coing, F; Pons, H

1996-01-01

SI-EPI is epidemiological information system set up in 1978 in the national electricity and gas company, Electricité de France-Gaz de France (EDF-GDF). The worker population comprises about 150,000 individuals, involved in production, transmission and distribution of energy. SI-EPI was developed by the epidemiologists of the Occupational Health Department (180 physicians), and of the Sécurité Sociale Department (120 physicians). Several data bases constitute SI-EPI. The population data base contains demographic, socioeconomic and professional data about each worker. The health data base is an exhaustive register of sick leave, accidents, permanent disabilities, compensated diseases, causes of death and cancer incidence among active workers. The Occupational Exposure and Working Conditions data base includes the MATEX job-exposure matrix (30 potentially carcinogenic agents) and FINDEX files which record data obtained from the systematic individual surveillance of workers. The GAZEL cohort data base concerns a sample of more than 20,000 volunteer workers, followed since 1989; in addition to data from the data bases, it contains information collected from other different sources, including self-questionnaires. Numerous epidemiological studies based on SI-EPI data have been conducted by in-house epidemiologists as well as by external research groups. They include mortality and morbidity studies and address various topics and health problems. Their results are used for internal information, as well as for epidemiological research purposes.

Synthesis and extreme rate capability of Si-Al-C-N functionalized carbon nanotube spray-on coatings as Li-ion battery electrode.

PubMed

David, Lamuel; Asok, Deepu; Singh, Gurpreet

2014-09-24

Silicon-based precursor derived glass-ceramics or PDCs have proven to be an attractive alternative anode material for Li ion batteries. Main challenges associated with PDC anodes are their low electrical conductivity, first cycle loss, and meager C-rate performance. Here, we show that thermal conversion of single source aluminum-modified polysilazane on the surfaces of carbon nanotubes (CNTs) results in a robust Si-Al-C-N/CNT shell/core composite that offers extreme C-rate capability as battery electrode. Addition of Al to the molecular network of Si-C-N improved electrical conductivity of Si-C-N by 4 orders of magnitude, while interfacing with CNTs showed 7-fold enhancement. Further, we present a convenient spray-coating technique for PDC composite electrode preparation that eliminates polymeric binder and conductive agent there-by reducing processing steps and eradicating foreign material in the electrode. The Si-Al-C-N/CNT electrode showed stable charge capacity of 577 mAh g(-1) at 100 mA g(-1) and a remarkable 400 mAh g(-1) at 10,000 mA g(-1), which is the highest reported value for a silazane derived glass-ceramic or nanocomposite electrode. Under symmetric cycling conditions, a high charge capacity of ∼350 mA g(-1) at 1600 mA g(-1) was continuously observed for over 1000 cycles.

Microcrystalline silicon growth for heterojunction solar cells

NASA Technical Reports Server (NTRS)

Iles, P. A.; Leung, D. C.; Fang, P. H.

1984-01-01

A single source of evaporation with B mixed with highly doped Si is used instead of the coevaporation of separate Si and B sources to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, are similar when evaporation is used. The best Voc of the heterojunction is about 460mV and no improvement in Voc in the heteroface structure is observed. Slight Voc degradation occurred. A study of the p m-Si/p c-Si structure showed a negative Voc in many cases. The interface properties between the two materials are such that instead of repelling minority carriers from the substrate carrier, collection actually occurred. Another study of cells made in the part of substrates not covered by n-Si results in performance lower than the controls. This indicates possible substrate degradation in the process.

Reduction of plasma density in the Helicity Injected Torus with Steady Inductance experiment by using a helicon pre-ionization source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossack, Aaron C.; Jarboe, Thomas R.; Victor, Brian S.

2013-10-15

A helicon based pre-ionization source has been developed and installed on the Helicity Injected Torus with Steady Inductance (HIT-SI) spheromak. The source initiates plasma breakdown by injecting impurity-free, unmagnetized plasma into the HIT-SI confinement volume. Typical helium spheromaks have electron density reduced from (2–3) × 10{sup 19} m{sup −3} to 1 × 10{sup 19} m{sup −3}. Deuterium spheromak formation is possible with density as low as 2 × 10{sup 18} m{sup −3}. The source also enables HIT-SI to be operated with only one helicity injector at injector frequencies above 14.5 kHz. A theory explaining the physical mechanism driving the reductionmore » of breakdown density is presented.« less

Molten-salt corrosion of silicon nitride. I - Sodium carbonate. II - Sodium sulfate

NASA Technical Reports Server (NTRS)

Fox, Dennis S.; Jacobson, Nathan S.

1988-01-01

An experimental study of the corrosion of Si3N4 under thin films of Na2CO3 at 1000 C has been conducted using both pure Si3N4 and Si3N4 with various additives. The reaction mechanism is shown to consist of: (1) the decomposition of Na2CO3 and the formation of Na2SiO3; (2) rapid oxidation; and (3) the formation of a protective silica layer below the silicate. In the second part, the corrosion mechanism of Si3N4 + Na2SO4/O2 at 1000 C was studied for both pure and additive-containing Si3N4. The reaction of Si3N4 + Na2SO4 was found to involve an initial period of slow weight loss (due to Na2SO4 vaporization and oxidation-dissolution) followed by further oxidation or the near termination of the reaction, depending on the Si3N4 additive.

Two Populations of SiO Masers in the Galactic Bulge

NASA Astrophysics Data System (ADS)

Trapp, Adam; Rich, Robert Michael; Morris, Mark; Pihlstrom, Ylva; Sjouwerman, Lorant; Claussen, Mark J.; Stroh, Michael

2017-01-01

We present a summary of the kinematics of stellar SiO masers observed in the direction of the galactic bulge with ALMA (885 sources), and the JVLA (2,479 sources). These objects are selected by color from the MSX point source catalog, which has given an SiO detection rate of ~70%. The presented sample, along with the ~24,000 sources still being observed and reduced, enable radial velocity measurements even in regions with extreme optical extinction. These maser stars are compared to the known bulge surveys: APOGEE (~25,000 sources), BRAVA (~8000 sources), and GIBS (~6,400 sources). We have found that BAaDE stars in the direction of the bulge exist in two subpopulations: (1) A kinematically hot population exhibiting cylindrical rotation consistent with the other bulge surveys, and (2) a kinematically cold population more consistent with a disk population. In the ALMA data, we find evidence for a -200 km/s feature at (l,b) = (-9,0), possibly the symmetric complement to a previously proposed +200 km/s feature (Nidever 2012), that we do not confirm with our data.

Metal Additive Manufacturing: A Review of Mechanical Properties

NASA Astrophysics Data System (ADS)

Lewandowski, John J.; Seifi, Mohsen

2016-07-01

This article reviews published data on the mechanical properties of additively manufactured metallic materials. The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, EBF3). Although only a limited number of metallic alloy systems are currently available for additive manufacturing (e.g., Ti-6Al-4V, TiAl, stainless steel, Inconel 625/718, and Al-Si-10Mg), the bulk of the published mechanical properties information has been generated on Ti-6Al-4V. However, summary tables for published mechanical properties and/or key figures are included for each of the alloys listed above, grouped by the additive technique used to generate the data. Published values for mechanical properties obtained from hardness, tension/compression, fracture toughness, fatigue crack growth, and high cycle fatigue are included for as-built, heat-treated, and/or HIP conditions, when available. The effects of test orientation/build direction on properties, when available, are also provided, along with discussion of the potential source(s) (e.g., texture, microstructure changes, defects) of anisotropy in properties. Recommendations for additional work are also provided.

Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications

DTIC Science & Technology

2013-04-05

radioiso- tope sources in the past. In a space nuclear reactor system, the energy source is the heat generated by the controlled fission of uranium ...to the nanodots and/or nanocluster formations in the multilayered thin films. This is one of the expected results of the ion beam bombardments on...very large (150 W m 1 K 1 for Si and 63 W m 1 K 1 for Ge). The lattice thermal conductivity can be substantially reduced by alloy formation between

Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

NASA Astrophysics Data System (ADS)

Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

2016-08-01

Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ∼70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ∼10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium Si isotope fractionation for Fe-Si gel systems is significantly larger in magnitude than estimates of a near-zero solid-aqueous fractionation factor between pure Si gel and aqueous Si, indicating a major influence of Fe atoms on Si-O bonds, and hence the isotopic properties, of Fe-Si gel. Larger Si isotope fractionation in the Fe(II)-bearing systems may be caused by incorporation of Fe(II) into the solid structure, which may further weaken Fe-Si bonds and thus change the Si isotope fractionation factor. The relatively large Si isotope fractionation for Fe-Si gel, relative to pure Si gel, provides a new explanation for the observed contrast in δ30Si values in the Precambrian BIFs and cherts, as well as an explanation for the relatively negative δ30Si values in BIFs, in contrast to previous proposals that the more negative δ30Si values in BIFs reflect hydrothermal sources of Si or sorption to Fe oxides/hydroxides.

B Removal by Zr Addition in Electromagnetic Solidification Refinement of Si with Si-Al Melt

NASA Astrophysics Data System (ADS)

Lei, Yun; Ma, Wenhui; Sun, Luen; Dai, Yongnian; Morita, Kazuki

2016-02-01

This study investigated a new process of enhancing B removal by adding small amounts of Zr in the electromagnetic solidification refinement of Si with Si-Al melt. B in Si was removed by as much as 97.2 pct by adding less than 1057 ppma Zr, and the added Zr was removed by as much as 99.7 pct. In addition, Zr is more effective in enhancing B removal than Ti in the same electromagnetic solidification refining process.

Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Yong-Lim

Si1-yCy alloys were grown on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6/CH3 SiH3 mixtures as a function of C concentration y (0 to 2.6 at %) and deposition temperature Ts (500--600°C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In-situ isotopically-tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregates to the second-layer during steady-state Si1-y Cy(001) growth. This, in turn, results in charge-transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θ Si*(y, Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H 6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts, JSi2H6,J CH3SiH3 ) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in good agreement with the experimental data. At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

NASA Astrophysics Data System (ADS)

Barick, B. K.; Yadav, Shivesh; Dhar, S.

2017-11-01

GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature ∼910 °C. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along [ 1 0 1 bar 0 ] direction. It has also been observed that the average diameter of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.

Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

NASA Astrophysics Data System (ADS)

Wong, Kin Mun

In this article, a simple, low cost and combined surface treatment method [pre-oxidation immersion of the p-type silicon (Si) substrate in hydrogen peroxide (H2O2) and post oxidation ultra-violet (UV) irradiation of the silicon-dioxide (SiO2) film] at room temperature is investigated. The interface trap density at midgap [Dit(mg)] of the resulting SiO2 film (denoted as sample 1A) is quantified from the full width at half-maximum of the scanning capacitance microscopy (SCM) differential capacitance (dC/dV) characteristics by utilizing a previously validated theoretical model. The Dit(mg) of sample 1A is significantly lower than the sample without any surface treatments which indicates that it is a viable technique for improving the interfacial quality of the thicker SiO2 films prepared by wet oxidation. Moreover, the proposed combined surface treatment method may possibly complement the commonly used forming gas anneal process to further improve the interfacial quality of the SiO2 films. The positive shift of the flatband voltage due to the overall oxide charges (estimated from the probe tip dc bias at the peak dC/dV spectra) of sample 1A suggests the presence of negative oxide fixed charge density (Nf) in the oxide. In addition, an analytical formula is derived to approximate the difference of the Nf values between the oxide samples that are immersed in H2O2 and UV irradiated from their measured SCM dC/dV spectra. Conversely, some physical mechanisms are proposed that result in the ionization of the SiO- species (which are converted from the neutral SiOH groups that originate from the pre-oxidation immersion in H2O2 and ensuing wet oxidation) during the UV irradiation as well as the UV photo-injected electrons from the Si substrate (which did not interact with the SiOH groups). They constitute the source of mobile electrons which partially passivate the positively charged empty donor-like interface traps at the Si-SiO2 interface.

Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.

Using Si depletion in aerosol to identify the sources of crustal dust in two Chinese megacities

NASA Astrophysics Data System (ADS)

Zhao, Qing; He, Kebin; Rahn, Kenneth A.; Ma, Yongliang; Yang, Fumo; Duan, Fengkui

2010-07-01

Depletion of Si in transported dust has been recognized for many years. It can be used to distinguish between transported and local dust in cities, although it rarely has been. Here we use the variations of the Si/Al ratio in 15 months of continuous PM 2.5 samples at Beijing (northern China) and Chongqing (southwestern China) to reveal the seasonal patterns of their dust sources. For both cities, peaks of concentration for Si and Al in PM 2.5 corresponded with minima of Si/Al, and could often be linked to pulsed air flow from deserts to the northwest. With significant depletion (up to 80%) and homogeneous distribution at urban and rural sites, Si/Al showed a clear seasonal evolution, which decreased from spring to summer, increased from fall to winter, and collapsed during Chinese Spring Festival, indicating the dominance of transported dust, local fugitive dust and firework influence, respectively. The low ratios implied that desert dust is a common source during spring at Chongqing, whereas its presence during cold season at Beijing was also more frequent than expected. Failing to recognize the depletion of Si may lead to an overestimate of desert dust by 15%-65% when using the average abundance of Al in crust (6%-8%), as in previous studies. The difference in Si/Al ratio between local and transported dust implies that >60% of the dust at Beijing came from outside the city during the springs of 2004-2006. This result can help resolve the contradictory findings on this topic that have been presented earlier.

Shock-tube studies of silicon-compound vapors

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1977-01-01

Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes

PubMed Central

Liu, Nian; Huo, Kaifu; McDowell, Matthew T.; Zhao, Jie; Cui, Yi

2013-01-01

The recovery of useful materials from earth-abundant substances is of strategic importance for industrial processes. Despite the fact that Si is the second most abundant element in the Earth's crust, processes to form Si nanomaterials is usually complex, costly and energy-intensive. Here we show that pure Si nanoparticles (SiNPs) can be derived directly from rice husks (RHs), an abundant agricultural byproduct produced at a rate of 1.2 × 108 tons/year, with a conversion yield as high as 5% by mass. And owing to their small size (10–40 nm) and porous nature, these recovered SiNPs exhibits high performance as Li-ion battery anodes, with high reversible capacity (2,790 mA h g−1, seven times greater than graphite anodes) and long cycle life (86% capacity retention over 300 cycles). Using RHs as the raw material source, overall energy-efficient, green, and large scale synthesis of low-cost and functional Si nanomaterials is possible. PMID:23715238

NHC→SiCl4 : an ambivalent carbene-transfer reagent.

PubMed

Böttcher, Tobias; Steinhauer, Simon; Lewis-Alleyne, Lesley C; Neumann, Beate; Stammler, Hans-Georg; Bassil, Bassem S; Röschenthaler, Gerd-Volker; Hoge, Berthold

2015-01-07

The addition of BCl3 to the carbene-transfer reagent NHC→SiCl4 (NHC=1,3-dimethylimidazolidin-2-ylidene) gave the tetra- and pentacoordinate trichlorosilicon(IV) cations [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) with tetrachloroborate as counterion. This is in contrast to previous reactions, in which NHC→SiCl4 served as a transfer reagent for the NHC ligand. The addition of BF3 ⋅OEt2 , on the other hand, gave NHC→BF3 as the product of NHC transfer. In addition, the highly Lewis acidic bis(pentafluoroethyl)silane (C2 F5 )2 SiCl2 was treated with NHC→SiCl4 . In acetonitrile, the cationic silicon(IV) complexes [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) were detected with [(C2 F5 )SiCl3 ](-) as counterion. A similar result was already reported for the reaction of NHC→SiCl4 with (C2 F5 )2 SiH2 , which gave [(NHC)2 SiCl2 H][(C2 F5 )SiCl3 ]. If the reaction medium was changed to dichloromethane, the products of carbene transfer, NHC→Si(C2 F5 )2 Cl2 and NHC→Si(C2 F5 )2 ClH, respectively, were obtained instead. The formation of the latter species is a result of chloride/hydride metathesis. These compounds may serve as valuable precursors for electron-poor silylenes. Furthermore, the reactivity of NHC→SiCl4 towards phosphines is discussed. The carbene complex NHC→PCl3 shows similar reactivity to NHC→SiCl4 , and may even serve as a carbene-transfer reagent as well. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of highly dense SiN4 ceramics without additives by high pressure sintering

NASA Technical Reports Server (NTRS)

Takatori, K.; Shimade, M.; Koizumi, M.

1984-01-01

Silicon nitride (Si3N4) is one of candidate materials for the engineering ceramics which is used at high temperatures. The mechanical strengths of hot pressed or sintered Si2N4 ceramics containing some amount of additives, however, are deteriorated at elevated temperatures. To improve the high temperature strength of Si3N4 ceramics, an attempt to consolidate Si3N4 without additives was made by high pressure sintering technique. Scanning electron micrographs of fracture surfaces of the sintered bodies showed the bodies had finely grained and fully self-bonded sintered bodies were 310N sq m at room temperature and 174N/sq m at 1200 C.

Ca Addition Effects on the Microstructure, Tensile and Corrosion Properties of Mg Matrix Alloy Containing 8 wt.% Mg2Si

NASA Astrophysics Data System (ADS)

Lotfpour, M.; Emamy, M.; Dehghanian, C.; Pourbahari, B.

2018-02-01

The microstructure, tensile properties and corrosion behavior of the Mg-8 wt.% Mg2Si-x%Ca alloy have been studied by the use of optical microscopy, scanning electron microscopy equipped with energy-dispersive spectroscopy, x-ray diffraction, standard tensile testing, polarization test and electrochemical impedance spectroscopy (EIS) measurements. Microstructural studies indicated that Ca modifies both primary and eutectic Mg2Si phase. It was found that the average size of primary Mg2Si particles is about 60 μm, which is dropped by about 82% in the alloy containing 0.05 wt.% Ca. By the addition of different Ca contents, Ca-rich intermetallics (i.e., CaSi2 and CaMgSi) were formed. The modification mechanism of adding Ca during solidification was found to be due to the strong effect of CaMgSi phase as a heterogonous nucleation site, apart from CaSi2 which was reported before, for Mg2Si intermetallics. Tensile testing results ascertained that Ca addition enhances both ultimate tensile strength (UTS) and elongation values. The optimum amount of Ca was found to be 0.1 wt.%, which improved UTS and elongation values from about 130 MPa and 2% to 165 MPa and 5.5%, whereas more Ca addition (i.e., 3 wt.%) reduced the tensile properties of the alloy to about 105 MPa and 1.8%, which can be due to the formation of CaMgSi intermetallics with deteriorating needle-like morphology. Polarization and EIS tests also showed that the Mg-3%Si-0.5%Ca alloy pronounces as the best anti-corrosion alloy. Nevertheless, further added Ca (up to 3 wt.%) deteriorated the corrosion resistance due to predominance of worse galvanic coupling effect stemmed from the presence of stronger CaMgSi cathode in comparison with Mg2Si. With higher Ca additions, an adverse effect was seen on corrosion resistance of the Mg-3%Si alloy, as a result of forming a weak film on the alloy specimen surface.

Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.

Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

PubMed Central

Fu, Zhiqiang; Wang, Chengbiao

2014-01-01

Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0–3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS) Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker. PMID:25003143

The silicon isotope composition of the upper continental crust

NASA Astrophysics Data System (ADS)

Savage, Paul S.; Georg, R. Bastian; Williams, Helen M.; Halliday, Alex N.

2013-05-01

The upper continental crust (UCC) is the major source of silicon (Si) to the oceans and yet its isotopic composition is not well constrained. In an effort to investigate the degree of heterogeneity and provide a robust estimate for the average Si isotopic composition of the UCC, a representative selection of well-characterised, continentally-derived clastic sediments have been analysed using high-precision MC-ICPMS. Analyses of loess samples define a narrow range of Si isotopic compositions (δ30Si = -0.28‰ to -0.15‰). This is thought to reflect the primary igneous mineralogy and predominance of mechanical weathering in the formation of such samples. The average loess δ30Si is -0.22 ± 0.07‰ (2 s.d.), identical to average granite and felsic igneous compositions. Therefore, minor chemical weathering does not resolvably affect bulk rock δ30Si, and loess is a good proxy for the Si isotopic composition of unweathered, crystalline, continental crust. The Si isotopic compositions of shales display much more variability (δ30Si = -0.82‰ to 0.00‰). Shale Si isotope compositions do not correlate well with canonical proxies for chemical weathering, such as CIA values, but do correlate negatively with insoluble element concentrations and Al/Si ratios. This implies that more intensive or prolonged chemical weathering of a sedimentary source, with attendant desilicification, is required before resolvable negative Si isotopic fractionation occurs. Shale δ30Si values that are more positive than those of felsic igneous rocks most likely indicate the presence of marine-derived silica in such samples. Using the data gathered in this study, combined with already published granite Si isotope analyses, a weighted average composition of δ30Si = -0.25 ± 0.16‰ (2 s.d.) for the UCC has been calculated.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86,more » and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.« less

Synthesis and luminescent properties of CaCO3:Eu3+@SiO2 phosphors with core-shell structure

NASA Astrophysics Data System (ADS)

Liu, Min; Kang, Ming; Chen, Kexu; Mou, Yongren; Sun, Rong

2018-03-01

Integrating the processes of preparation of CaCO3:Eu3+ and its surface-coating, core-shell structured CaCO3:Eu3+@SiO2 phosphors with red emission were synthesized by the carbonation method and surface precipitation procedure using sodium silicate as silica source. The phase structure, thermal stability, morphology and luminescent property of the as-synthesized samples were characterized by X-ray diffraction, Fourier transform infrared spectrum, thermal analysis, field-emission scanning electron microscopy, transmission electron microscope and photoluminescence spectra. The experimental results show that Eu3+ ions as the luminescence center are divided into two types: one is at the surface of the CaCO3 and the other inhabits the site of Ca2+. For CaCO3:Eu3+@SiO2 phosphors, the SiO2 layers are continuously coated on the surface of CaCO3:Eu3+ and show a typical core-shell structure. After coated with SiO2 layer, the luminous intensity and the compatibility with the rubber matrix increase greatly. Additionally, the luminous intensity increases with the increasing of Eu3+ ions concentration in CaCO3 core and concentration quenching occurs when Eu3+ ions concentration exceeds 7.0 mol%, while it is 5.0 mol% for CaCO3:Eu3+ phosphors. Therefore, preparation of CaCO3:Eu3+@SiO2 phosphors can not only simplify the experimental process through integrating the preparation of CaCO3:Eu3+ and SiO2 layer, but also effectively increase the luminous intensities of CaCO3:Eu3+ phosphors. The as-obtained phosphors may have potential applications in the fields of optical materials and functional polymer composite materials, such as plastics and rubbers.

Ion beam figuring of CVD silicon carbide mirrors

NASA Astrophysics Data System (ADS)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

SI: The Stellar Imager

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

2006-01-01

The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

Reactions of Mono(disilylamino)phosphines with Carbon Tetrachloride.

DTIC Science & Technology

1984-05-18

and LiN(SiMe 3 )2 . Allyl and benzyl Grignard reagents were used in the Wilburn synthesis 6 to prepare phosphines L5-18. Compounds 15, 16, and 17, each...Section General Procedures. The following reagents were purchased from commercial sources and used without further purification: MeMgBr(Et20), PhCH...2.7 M, 99 mmol) was added dropwise via the addition funnel. The mixture was allowed to warm to room temperature and to stir overnight. The Grignard

Kimzeyite garnet phosphors

DOEpatents

Lyons, Robert Joseph

2013-05-14

A phosphor of formula I is included in a phosphor composition in a lighting apparatus capable of emitting white light, Ca.sub.3-x-zSr.sub.xCe.sub.zM.sup.1.sub.2M.sup.2AlSiO.sub.12 (I) wherein M.sup.1 is Hf, Zr, or a combination thereof; M.sup.2 is Al, or a combination of Al and Ga; z<3-x; and 0.2>x.gtoreq.0. The lighting apparatus includes a semiconductor light source in addition to the phosphor composition.

Influence of hydrogen on the thermoelectric voltage signal in a Pt/WO x /6 H-SiC/Ni/Pt layered structure

NASA Astrophysics Data System (ADS)

Zuev, V. V.; Grigoriev, S. N.; Fominski, V. Yu.; Volosova, M. A.; Soloviev, A. A.

2017-09-01

The possibility of detecting H2 by registering the thermal electromotive force signal, which arises between the surfaces of 6 H-SiC plates with a thickness of 400 μm, is established. The working surface of the plates is modified by deposition of a WO x film and catalytic Pt. An ohmic contact (Ni/Pt) is created on the rear surface of the plate, and this surface is maintained at a stabilized temperature of 350°C. The temperature gradient through the plate thickness arises due to the cooling of the working surface with the air medium. The delivery of H2 into this medium up to a concentration of 2% gives rise to a 15-fold increase in the electric signal, which considerably exceeds the Pt/WO x /SiC/Ni/Pt system's response registered in the usual way by measuring the current-voltage dependence. In this case, an additional power source for the registration of the thermal electromotive force is not required.

Metastable Defect Formation at Microvoids Identified as a Source of Light-Induced Degradation in a-Si :H

NASA Astrophysics Data System (ADS)

Fehr, M.; Schnegg, A.; Rech, B.; Astakhov, O.; Finger, F.; Bittl, R.; Teutloff, C.; Lips, K.

2014-02-01

Light-induced degradation of hydrogenated amorphous silicon (a-Si :H), known as the Staebler-Wronski effect, has been studied by time-domain pulsed electron-paramagnetic resonance. Electron-spin echo relaxation measurements in the annealed and light-soaked state revealed two types of defects (termed type I and II), which can be discerned by their electron-spin echo relaxation. Type I exhibits a monoexponential decay related to indirect flip-flop processes between dipolar coupled electron spins in defect clusters, while the phase relaxation of type II is dominated by H1 nuclear spin dynamics and is indicative for isolated spins. We propose that defects are either located at internal surfaces of microvoids (type I) or are isolated and uniformly distributed in the bulk (type II). The concentration of both defect type I and II is significantly higher in the light-soaked state compared to the annealed state. Our results indicate that in addition to isolated defects, defects on internal surfaces of microvoids play a role in light-induced degradation of device-quality a-Si :H.

Interferometric observations of non-maser SiO emission from circumstellar envelopes of AGB stars - Acceleration regions and SiO depletion

NASA Technical Reports Server (NTRS)

Sahai, Raghvendra; Bieging, John H.

1993-01-01

High- and medium-resolution images of SiO J = 2-1(V = 0) from the circumstellar envelopes (CSEs) of three oxygen-rich stars, Chi Cyg, RX Boo, and IK Tau, were obtained. The SIO images were found to be roughly circular, implying that the CSEs are spherically symmetric on angular-size scales of about 3-9 arcsec. The observed angular half-maximum intensity source radius is nearly independent of the LSR velocity for all three CSEs. Chi Cyg and RX Boo are argued to be less than 450 pc distant, and have mass-loss rates larger than about 10 exp -6 solar mass/yr. In Chi Cyg and RX Boo, the line profiles at the peak of the brightness distribution are rounded, typical of optically-thick emission from a spherical envelope expanding with a constant velocity. In the IK Tau line profiles, an additional narrower central component is present, probably a result of emission from an inner circumstellar shell with a significantly smaller expansion velocity than the extended envelope.

Amorphous Silicon Based Neutron Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei

2004-12-12

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield usingmore » low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.« less

Effect of AlB2 on the P-threshold in Al-Si alloy

NASA Astrophysics Data System (ADS)

Wu, Yuying; Liu, Xiangfa

2018-06-01

The nucleation of primary Si in Al-Si alloys has been investigated in this work. It was found that there was a threshold concentration of P, below which AlP can not heterogeneous nucleate primary Si in Al-12 wt%Si alloy. AlB2 can not nucleate primary Si directly, but the presence of AlB2 may assist the nucleation of AlP leading to the nucleation of primary Si particles. In addition, with addition of AlB2, the nucleation efficiency of AlP can be improved in Al-18 wt%Si alloy. The orientation relationship between AlB2 and AlP has been calculated, and the adsorption model for AlB2 and AlP was proposed in this work.

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, B.; Bareno, J.; Petrov, I.

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatommore » mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.« less

Silicone Resin Applications for Ceramic Precursors and Composites

PubMed Central

Narisawa, Masaki

2010-01-01

This article reviews the applications of silicone resins as ceramic precursors. The historical background of silicone synthesis chemistry is introduced to explain the production costs and supply availability of various silicones. Thermal degradation processes of silicones are classified in terms of the main chain structure and cyclic oligomer expulsion process, which determine the resulting ceramic yield and the chemical composition. The high temperature decomposition of Si-O-C beyond 1,400 °C in an inert atmosphere and formation of a protective silica layer on material surfaces beyond 1,200 °C in an oxidative atmosphere are discussed from the viewpoints of the wide chemical composition of the Si-O-C materials. Applications of the resins for binding agents, as starting materials for porous ceramics, matrix sources with impregnation, fiber spinning and ceramic adhesions are introduced. The recent development of the process of filler or cross-linking agent additions to resin compounds is also introduced. Such resin compounds are useful for obtaining thick coatings, MEMS parts and bulk ceramics, which are difficult to obtain by pyrolysis of simple organometallic precursors without additives.

CVD of silicon carbide on structural fibers - Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

CVD of silicon carbide on structural fibers: Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

Organosilane-functionalized graphene quantum dots and their encapsulation into bi-layer hollow silica spheres for bioimaging applications.

PubMed

Wen, Ting; Yang, Baocheng; Guo, Yanzhen; Sun, Jing; Zhao, Chunmei; Zhang, Shouren; Zhang, Miao; Wang, Yonggang

2014-11-14

Graphene quantum dots (GQDs) represent an important class of luminescent quantum dots owing to their low toxicity and superior biocompatibility. Chemical functionalization of GQDs and subsequent combination with other materials further provide attractive techniques for advanced bioapplications. Herein, we report the facile fabrication of fluorescent organosilane-functionalized graphene quantum dots (Si-GQDs) and their embedding into mesoporous hollow silica spheres as a biolabel for the first time. Well-proportioned Si-GQDs with bright and excitation dependent tunable emissions in the visible region were obtained via a simple and economical solvothermal route adopting graphite oxide as a carbon source and 3-(2-aminoethylamino)-propyltrimethoxysilane as a surface modifier. The as-synthesized Si-GQDs can be well dispersed and stored in organic solvents, easily manufactured into transparent film and bulk form, and particularly provide great potential to be combined with other materials. As a proof-of-principle experiment, we demonstrate the successful incorporation of Si-GQDs into hollow mesoporous silica spheres and conduct preliminary cellular imaging experiments. Interestingly, the Si-GQDs not only serve as fluorescent chromophores in the composite material, but also play a crucial role in the formation of mesoporous hollow silica spheres with a distinctive bi-layer architecture. The layer thickness and optical properties can be precisely controlled by simply adjusting the silane coupling agent addition procedure in the preparation process. Our demonstration of low-cost Si-GQDs and their encapsulation into multifunctional composites may expand the applications of carbon-based nanomaterials for future biomedical imaging and other optoelectronic applications.

Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E.

2003-04-01

In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si1-yCy alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si2H6/CH3SiH3 mixtures as a function of C concentration y (0-2.6 at %) and temperature Ts (500-600 °C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In situ isotopically tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregation during steady-state Si1-yCy(001) growth results in charge transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θSi*(y,Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. θSi* increases with increasing y and Ts in the kinetically limited segregation regime while Ed decreases from 2.52 eV for H2 desorption from Si surface sites with Si back bonds to 2.22 eV from Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts,JSi2H6,JCH3SiH3) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in excellent agreement with the experimental data.

Polyphosphate induces matrix metalloproteinase-3-mediated proliferation of odontoblast-like cells derived from induced pluripotent stem cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozeki, Nobuaki; Hase, Naoko; Yamaguchi, Hideyuki

2015-05-01

Inorganic polyphosphate [Poly(P)] may represent a physiological source of phosphate and has the ability to induce bone differentiation in osteoblasts. We previously reported that cytokine-induced matrix metalloproteinase (MMP)-3 accelerates the proliferation of purified odontoblast-like cells. In this study, MMP-3 small interfering RNA (siRNA) was transfected into odontoblast-like cells derived from induced pluripotent stem cells to investigate whether MMP-3 activity is induced by Poly(P) and/or is associated with cell proliferation and differentiation into odontoblast-like cells. Treatment with Poly(P) led to an increase in both cell proliferation and additional odontoblastic differentiation. Poly(P)-treated cells showed a small but significant increase in dentin sialophosphoproteinmore » (DSPP) and dentin matrix protein-1 (DMP-1) mRNA expression, which are markers of mature odontoblasts. The cells also acquired additional odontoblast-specific properties including adoption of an odontoblastic phenotype typified by high alkaline phosphatase (ALP) activity and a calcification capacity. In addition, Poly(P) induced expression of MMP-3 mRNA and protein, and increased MMP-3 activity. MMP-3 siRNA-mediated disruption of the expression of these effectors potently suppressed the expression of odontoblastic biomarkers ALP, DSPP, and DMP-1, and blocked calcification. Interestingly, upon siRNA-mediated silencing of MMP-3, we noted a potent and significant decrease in cell proliferation. Using specific siRNAs, we revealed that a unique signaling cascade, Poly(P)→MMP-3→DSPP and/or DMP-1, was intimately involved in the proliferation of odontoblast-like cells. - Highlights: • Polyphosphate increases proliferation of iPS cell-derived odontoblast-like cells. • Polyphosphate-induced MMP-3 results in an increase of cell proliferation. • Induced cell proliferation involves MMP-3, DSPP, and/or DMP-1 sequentially. • Induced MMP-3 also results in an increase of odontoblastic differentiation.« less

The Effect of Li Additions on Wear Properties of Al-Mg2Si Cast In-situ Composites

NASA Astrophysics Data System (ADS)

Ghorbani, M. R.; Emamy, M.; Ghiasinejad, J.; Malekan, A.

2010-06-01

Wear rate of a modified Al-Mg2Si composite was studied by the use of a conventional pin-on-disc technique. In-situ Al-Mg2Si composites (15, 20, 25 wt.%) were cast in a simple cylindrical mold. 0.3 wt.% Li was added into the molten composite to modify its microstructure. It has been found that Li addition decreases the mean size of primary Mg2Si particles. The wear behavior of different composites at different rates revealed that Li addition increases the wear properties of Al-15%Mg2Si to some extent but it did not have any significant influence on wear properties of two other composites.

Additivity of the coefficient of thermal expansion in silicate optical fibers.

PubMed

Cavillon, M; Dragic, P D; Ballato, J

2017-09-15

A model that predicts the material additivity of the thermal expansion coefficient in the binary silicate glasses most commonly used for present (GeO 2 -SiO 2 , P 2 O 5 -SiO 2 , B 2 O 3 -SiO 2 , and Al 2 O 3 -SiO 2 ) and emerging (BaO-SiO 2 ) optical fibers is proposed. This model is based on a derivation of the expression for the coefficient of thermal expansion in isotropic solids, and gives direct insight on the parameters that govern its additivity in silicate glasses. Furthermore, a consideration of the local structural environment of the glass system is necessary to fully describe its additivity behavior in the investigated systems. This Letter is important for better characterizing and understanding of the impact of temperature and internal stresses on the behavior of optical fibers.

Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites

NASA Astrophysics Data System (ADS)

Huang, Ching-Chien; Jiang, Ai-Hua; Hung, Yung-Hsiung; Liou, Ching-Hsuan; Wang, Yi-Chen; Lee, Chi-Ping; Hung, Tong-Yin; Shaw, Chun-Chung; Kuo, Ming-Feng; Cheng, Chun-Hu

2018-04-01

An experiment was carried out to investigate the influence of CaCO3 and SiO2 additives on the magnetic and physical properties of M-type Sr ferrites by changing experimental parameters such as the additive composition and Ca/Si ratio. Specimens were prepared by conventional ceramic techniques. It was found that the magnetic properties (Br = 4.42 kG, iHc = 3.32 kOe and (BH)max = 4.863 MGOe) were considerably improved upon adding CaCO3 = 1.1% and SiO2 = 0.4 wt% together with Co3O4, and the mechanical properties thereof were acceptable for motor applications. It was revealed that CaCO3 and SiO2 additives led to an upswing in the magnetic properties via the enhancement of uniform grain growth, particle alignment, and the densification of Sr ferrite.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsapatsaris, N., E-mail: nikolaos.tsapatsaris@esss.se, E-mail: ruep.lechner@gmail.com, E-mail: bordallo@nbi.ku.dk; Bordallo, H. N., E-mail: nikolaos.tsapatsaris@esss.se, E-mail: ruep.lechner@gmail.com, E-mail: bordallo@nbi.ku.dk; European Spallation Source ERIC, Tunavägen 24, 22100 Lund

In this work, we present the conceptual design of the backscattering time-of-flight spectrometer MIRACLES approved for construction at the long-pulse European Spallation Source (ESS). MIRACLES’s unparalleled combination of variable resolution, high flux, extended energy, and momentum transfer (0.2–6 Å{sup −1}) ranges will open new avenues for neutron backscattering spectroscopy. Its remarkable flexibility can be attributed to 3 key elements: the long-pulse time structure and low repetition rate of the ESS neutron source, the chopper cascade that tailors the moderator pulse in the primary part of the spectrometer, and the bent Si(111) analyzer crystals arranged in a near-backscattering geometry in themore » secondary part of the spectrometer. Analytical calculations combined with instrument Monte-Carlo simulations show that the instrument will provide a variable elastic energy resolution, δ(ħ ω), between 2 and 32 μeV, when using a wavelength of λ ≈ 6.267 Å (Si(111)-reflection), with an energy transfer range, ħ ω, centered at the elastic line from −600 to +600 μeV. In addition, when selecting λ ≈ 2.08 Å (i.e., the Si(333)-reflection), δ(ħ ω) can be relaxed to 300 μeV and ħ ω from about 10 meV in energy gain to ca −40 meV in energy loss. Finally, the dynamic wavelength range of MIRACLES, approximately 1.8 Å, can be shifted within the interval of 2–20 Å to allow the measurement of low-energy inelastic excitations.« less

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isoda, Taiga; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-21

Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using {sup nat}Si/{sup 28}Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800–950 °C. The behavior of Si self-interstitials is investigated through the {sup 30}Si self-diffusion. The experimental {sup 30}Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results basedmore » on this model have well reproduced the experimental {sup 30}Si profiles.« less

Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

NASA Astrophysics Data System (ADS)

Ogudo, Kingsley A.; Snyman, Lukas W.; Polleux, Jean-Luc; Viana, Carlos; Tegegne, Zerihun

2014-06-01

Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime [1, 2]. Correspondingly, small micro-dimensioned detectors with pW/μm2 sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz [3] A series of on-chip optical links of 50 micron length, utilizing 650 - 850 nm propagation wavelength have been designed and realized, utilizing a Si Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and - 40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide- to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected.

Consolidation of silicon nitride without additives. [for gas turbine engine efficiency increase

NASA Technical Reports Server (NTRS)

Sikora, P. F.; Yeh, H. C.

1976-01-01

The use of ceramics for gas turbine engine construction might make it possible to increase engine efficiency by raising operational temperatures to values beyond those which can be tolerated by metallic alloys. The most promising ceramics being investigated in this connection are Si3N4 and SiC. A description is presented of a study which had the objective to produce dense Si3N4. The two most common methods of consolidating Si3N4 currently being used include hot pressing and reaction sintering. The feasibility was explored of producing a sound, dense Si3N4 body without additives by means of conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. It was found that Si3N4 can be densified without additions to a density which exceeds 95% of the theoretical value

X-ray photoelectron study of Si+ ion implanted polymers

NASA Astrophysics Data System (ADS)

Tsvetkova, T.; Balabanov, S.; Bischoff, L.; Krastev, V.; Stefanov, P.; Avramova, I.

2010-11-01

X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm-2). Two kinds of polymers were studied - ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si+ ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements - Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.

Fabrication and characterization of Si3N4 ceramics without additives by high pressure hot pressing

NASA Technical Reports Server (NTRS)

Shimada, M.; Tanaka, A.; Yamada, T.; Koizumi, M.

1984-01-01

High pressure hot-pressing of Si3N4 without additives was performed using various kinds of Si3N4 powder as starting materials, and the relation between densification and alpha-beta phase transformation was studied. The temperature dependences of Vickers microhardness and fracture toughness were also examined. Densification of Si3N4 was divided into three stages, and it was found that densification and phase transformation of Si3N4 under pressure were closely associated. The results of the temperature dependence of Vickers microhardness indicated that the high-temperature hardness was strongly influenced not only by the density and microstructure of sintered body but also by the purity of starting powder. The fracture toughness values of Si3N4 bodies without additives were 3.29-4.39 MN/m to the 3/2 power and independent of temperature up to 1400 C.

Silicon Carbide Temperature Monitor Processing Improvements. Status Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan

2016-01-29

Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whethermore » a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.« less

The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

NASA Astrophysics Data System (ADS)

Carpenter, K. G.; Schrijver, C. J.; Karovska, M.; Si Vision Mission Team

2009-09-01

The Stellar Imager (SI) is a UV/Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is included as a ``Flagship and Landmark Discovery Mission'' in the 2005 NASA Sun Solar System Connection (SSSC) Roadmap and as a candidate for a ``Pathways to Life Observatory'' in the NASA Exploration of the Universe Division (EUD) Roadmap (May, 2005). In this paper we discuss the science goals and technology needs of, and the baseline design for, the SI Mission (http://hires.gsfc.nasa.gov/si/) and its ability to image the Biggest, Baddest, Coolest Stars.

The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth; Schrijver, Carolus J.; Karovska, Margarita

2007-01-01

The Stellar Imager (SI) is a UV/Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is included as a 'Flagship and Landmark Discovery Mission' in the 2005 NASA Sun Solar System Connection (SSSC) Roadmap and as a candidate for a 'Pathways to Life Observatory' in the NASA Exploration of the Universe Division (EUD) Roadmap (May, 2005). In this paper we discuss the science goals and technology needs of, and the baseline design for, the SI Mission (http://hires.gsfc.nasa.gov/si/) its ability to image the 'Biggest, Baddest, Coolest Stars'.

Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke

2016-03-15

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due tomore » the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.« less

Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

2000-01-01

Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

Silicon Decreases Dimethylarsinic Acid Concentration in Rice Grain and Mitigates Straighthead Disorder.

PubMed

Limmer, Matthew Alan; Wise, Patrick; Dykes, Gretchen E; Seyfferth, Angelia L

2018-04-17

While root Si transporters play a role in the uptake of arsenite and organic As species dimethylarsinic acid (DMA) and monomethylarsonic acid (MMA) in rice ( Oryza sativa L.), the impact of Si addition on the accumulation of DMA and MMA in reproductive tissues has not been directly evaluated, particularly in isolation from inorganic As species. Furthermore, DMA and MMA are suspected causal agents of straighthead disorder. We performed a hydroponic study to disentangle the impact of Si on accumulation of DMA and MMA in rice grain. At 5 μM, MMA was toxic to rice, regardless of Si addition, although Si significantly decreased root MMA concentrations. Plants dosed with 5 μM DMA grew well vegetatively but exhibited straighthead disorder at the lowest Si dose, and this DMA-induced yield loss reversed with increasing solution Si. Increasing Si also significantly decreased DMA concentrations in roots, straw, husk, and grain, particularly in mature plants. Si restricted grain DMA through competition for root uptake and downregulation of root Si transporters particularly at later stages of growth when Si uptake was greatest. Our finding that DMA causes straighthead disorder under low Si availability but not under high Si availability suggests Si as a straighthead management strategy.

Influence wt.% of SiC and borax on the mechanical properties of AlSi-Mg-TiB-SiC composite by the method of semi solid stir casting

NASA Astrophysics Data System (ADS)

Bhiftime, E. I.; Guterres, Natalino F. D. S.; Haryono, M. B.; Sulardjaka, Nugroho, Sri

2017-04-01

SiC particle reinforced metal matrix composites (MMCs) with solid semi stir casting method is becoming popular in recent application (automotive, aerospace). Stirring the semi solid condition is proven to enhance the bond between matrix and reinforcement. The purpose of this study is to investigate the effect of the SiC wt.% and the addition of borax on mechanical properties of composite AlSi-Mg-TiB-SiC and AlSi-Mg-TiB-SiC/Borax. Specimens was tested focusing on the density, porosity, tensile test, impact test microstructure and SEM. AlSi is used as a matrix reinforced by SiC with percentage variations (10, 15, 20 wt.%). Giving wt.% Borax which is the ratio of 1: 4 between wt.% SiC. The addition of 1.5% of TiB gives grain refinement. The use of semi-solid stir casting method is able to increase the absorption of SiC particles into a matrix AlSi evenly. The improved composite presented here can be used as a guideline to make a new composite.

Polyamidoamine-Decorated Nanodiamonds as a Hybrid Gene Delivery Vector and siRNA Structural Characterization at the Charged Interfaces.

PubMed

Lim, Dae Gon; Rajasekaran, Nirmal; Lee, Dukhee; Kim, Nam Ah; Jung, Hun Soon; Hong, Sungyoul; Shin, Young Kee; Kang, Eunah; Jeong, Seong Hoon

2017-09-20

Nanodiamonds have been discovered as a new exogenous material source in biomedical applications. As a new potent form of nanodiamond (ND), polyamidoamine-decorated nanodiamonds (PAMAM-NDs) were prepared for E7 or E6 oncoprotein-suppressing siRNA gene delivery for high risk human papillomavirus-induced cervical cancer, such as types 16 and 18. It is critical to understand the physicochemical properties of siRNA complexes immobilized on cationic solid ND surfaces in the aspect of biomolecular structural and conformational changes, as the new inert carbon material can be extended into the application of a gene delivery vector. A spectral study of siRNA/PAMAM-ND complexes using differential scanning calorimetry and circular dichroism spectroscopy proved that the hydrogen bonding and electrostatic interactions between siRNA and PAMAM-NDs decreased endothermic heat capacity. Moreover, siRNA/PAMAM-ND complexes showed low cell cytotoxicity and significant suppressing effects for forward target E6 and E7 oncogenic genes, proving functional and therapeutic efficacy. The cellular uptake of siRNA/PAMAM-ND complexes at 8 h was visualized by macropinocytes and direct endosomal escape of the siRNA/PAMAM-ND complexes. It is presumed that PAMAM-NDs provided a buffering cushion to adjust the pH and hard mechanical stress to escape endosomes. siRNA/PAMAM-ND complexes provide a potential organic/inorganic hybrid material source for gene delivery carriers.

The effect of X-ray exposure on Ba2SiO4:Eu3+

NASA Astrophysics Data System (ADS)

Volhard, Max-Fabian; Jüstel, Thomas

2018-03-01

The ortho-silicates Ba2SiO4:Eu3+ and Ba2SiO4:Eu2+ are well-established materials for fluorescent light sources, e.g., phosphor converted LEDs. Samples containing Eu2+or Eu3+were synthesised by the solid-state-method, and the phase purity was determined by X-ray powder diffractometry. The photoluminescence of both phosphors was examined as a function of the pre-treatment. Upon irradiation of Ba2SiO4:Eu3+ with X-rays (tungsten target source), the reduction of Eu3+ towards Eu2+ was observed. This reduction behaviour was thoroughly recorded, and the linearity of the process was determined. Furthermore, the relationship between the acceleration voltage and the reduction process is discussed.

Improved nucleic acid descriptors for siRNA efficacy prediction.

PubMed

Sciabola, Simone; Cao, Qing; Orozco, Modesto; Faustino, Ignacio; Stanton, Robert V

2013-02-01

Although considerable progress has been made recently in understanding how gene silencing is mediated by the RNAi pathway, the rational design of effective sequences is still a challenging task. In this article, we demonstrate that including three-dimensional descriptors improved the discrimination between active and inactive small interfering RNAs (siRNAs) in a statistical model. Five descriptor types were used: (i) nucleotide position along the siRNA sequence, (ii) nucleotide composition in terms of presence/absence of specific combinations of di- and trinucleotides, (iii) nucleotide interactions by means of a modified auto- and cross-covariance function, (iv) nucleotide thermodynamic stability derived by the nearest neighbor model representation and (v) nucleic acid structure flexibility. The duplex flexibility descriptors are derived from extended molecular dynamics simulations, which are able to describe the sequence-dependent elastic properties of RNA duplexes, even for non-standard oligonucleotides. The matrix of descriptors was analysed using three statistical packages in R (partial least squares, random forest, and support vector machine), and the most predictive model was implemented in a modeling tool we have made publicly available through SourceForge. Our implementation of new RNA descriptors coupled with appropriate statistical algorithms resulted in improved model performance for the selection of siRNA candidates when compared with publicly available siRNA prediction tools and previously published test sets. Additional validation studies based on in-house RNA interference projects confirmed the robustness of the scoring procedure in prospective studies.

Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu

NASA Astrophysics Data System (ADS)

Fang, J. S.; Lin, L. Y.; Wu, C. L.; Cheng, Y. L.; Chen, G. S.

2017-11-01

The effects of additives to an acidic electrolyte for electrochemical deposition of copper film to prevent corrosion of the Co/SiO2/Si substrate have been investigated. A sacrificial Pb layer was formed by underpotential deposition (UPD), then a Cu layer was prepared using surface-limited redox replacement (SLRR) to exchange the UPD-Pb layer in an acidic copper electrolyte with trisodium citrate, sodium perchlorate, and ethylenediamine as additives. The additives significantly affected the replacement of UPD-Pb by Cu and prevented galvanic corrosion of the Co/SiO2/Si substrate in the acidic Cu electrolyte. The results showed that both sodium perchlorate and ethylenediamine reduced the corrosion of the Co substrate and resulted in Cu film with low electrical resistivity. However, residual Pb was present in the Cu film when using trisodium citrate, as the citrate ions slowed copper displacement. The proposed sequential UPD-Pb and SLRR-Cu growth method may enable electrochemical deposition for fabrication of Cu interconnects on Co substrate from acidic Cu electrolyte.

SiO{sub 2} nanospheres with tailorable interiors by directly controlling Zn{sup 2+} and NH{sub 3}.H{sub 2}O species in an emulsion process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao Yuchao; Graduate University of Chinese Academy of Sciences, Beijing 100049; Wu Xiaofeng

2011-07-15

SiO{sub 2} nanospheres with tailorable interiors were synthesized by a facile one-spot microemulsion process using TEOS as silica source, wherein cyclohexane including triton X-100 and n-octanol as oil phase and Zn{sup 2+} or NH{sub 3}.H{sub 2}O aqueous solution as dispersive phase, respectively. The products were characterized by Scanning Electron Microscopy, Transmission Electron Microscopy and X-ray Powder Diffraction. It was suggested that the as-synthesized silica nanospheres possessed grape-stone-like porous or single hollow interior, and also found that the ammonia dosage and aging time played key roles in controlling the size and structure of silica nanospheres. Furthermore, the comparative results confirmed thatmore » in-situ zinc species [ZnO/Zn(OH){sub 2}] acted as the temporary templates to construct grape-stone-like interior, and a simultaneously competing etching process occurred owing to the soluble Zn(NH{sub 3}){sub 4}{sup 2+} complex formation while the additional excessive ammonia was introduced. With the aging time being extended, the in-situ nanocrystals tended to grow into bigger ones by Ostwald Ripening, producing single hollow interior. - Graphical Abstract: Formation process of SiO{sub 2} nanospheres with porous and single hollow interior. Highlights: > ZnO/Zn(OH){sub 2} nanocrystals as the temporary templates shape the interior structures of SiO{sub 2} nanospheres. > Fabrication of porous and single hollow interiors needs no additional processes such as roasting or dissolving. > Tailorable interiors can be easily obtained through adjusting the aging time of temporary templates.« less

Fan-beam densitometry of the growing skeleton: are we measuring what we think we are?

PubMed

Cole, Jacqueline H; Scerpella, Tamara A; van der Meulen, Marjolein C H

2005-01-01

Magnification error in fan-beam densitometers varies with distance from the X-ray source to the bone measured and might obscure bone mineral changes in the growing skeleton. Magnification was examined by scanning aluminum rods of different shapes (square, rectangular, solid round, and hollow round) at four distances above the X-ray source in two orientations, with rods aligned parallel (SI) and perpendicular (ML) to the longitudinal axis of the scanning table. Measured area (cm(2)) decreased linearly with distance above the X-ray source for all rods in the SI orientation (p < 0.005). Measured mineral content (g) decreased linearly with distance but only for SI round rods (p < 0.0001) and for ML hollow round rods (p < 0.005). Area and mineral content decreased 1.6-1.8% per centimeter above the source for round rods. Measured mineral density (g/cm(2)) decreased linearly with distance from the source only for ML hollow round rods (p < 0.005). Variation in area, mineral content, and mineral density measurements was 6.6-6.9%, 6.9-7.5%, and 1.9-2.3%, respectively, for SI round rods. Magnification errors of this magnitude are problematic for clinical studies using fan-beam densitometry. Particularly in pediatric subjects, increases in soft tissue during normal growth could increase a bone's distance from the fan-beam source and result in apparent reductions in area and bone mineral content.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masuda, Takuya; PRESTO, Japan Science and Technology Agency; Yoshikawa, Hideki

In situ electrochemical X-ray photoelectron spectroscopy (XPS) apparatus, which allows XPS at solid/liquid interfaces under potential control, was constructed utilizing a microcell with an ultra-thin Si membrane, which separates vacuum and a solution. Hard X-rays from a synchrotron source penetrate into the Si membrane surface exposed to the solution. Electrons emitted at the Si/solution interface can pass through the membrane and be analyzed by an analyzer placed in vacuum. Its operation was demonstrated for potential-induced Si oxide growth in water. Effect of potential and time on the thickness of Si and Si oxide layers was quantitatively determined at sub-nanometer resolution.

SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black.

PubMed

Wang, Feng-Lei; Zhang, Li-Ying; Zhang, Ya-Fei

2008-11-22

SiC nanowires have been synthesized at 1,600 degrees C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO(2) nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.

Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

NASA Astrophysics Data System (ADS)

Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

2016-05-01

Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

Metals Technology for Aerospace Applications in 2020: Development of High Temperature Aluminum Alloys For Aerospace Applications

NASA Technical Reports Server (NTRS)

Dicus, Dennis (Technical Monitor); Starke, Edgar A., Jr.

2003-01-01

The role of trace additions on the nucleation and stability of the primary strengthening phase, omega, is of paramount importance for the enhancement of mechanical properties for moderate temperature application of Al-Cu-Mg-(Ag) alloys. In order to better understand the competition for solute, which governs the microstructural evolution of these alloys, a series of Al-Cu-Mg-Si quaternary alloys were prepared to investigate the role of trace Si additions on the nucleation of the omega phase. Si additions were found to quell omega nucleation in conjunction with the enhanced matrix precipitation of competing phases. These initial results indicate that it is necessary to overcome a critical Mg/Si ratio for omega precipitation, rather than a particular Si content.

40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 6 2010-07-01 2010-07-01 false What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer of equipment containing such engines? 60.4247 Section 60.4247 Protection of Environment ENVIRONMENTAL...

Tumour-associated neutrophils and loss of epithelial PTEN can promote corticosteroid-insensitive MMP-9 expression in the chronically inflamed lung microenvironment

PubMed Central

Vannitamby, Amanda; Seow, Huei Jiunn; Anderson, Gary; Vlahos, Ross; Thompson, Michelle; Steinfort, Daniel; Irving, Louis B; Bozinovski, Steven

2017-01-01

Matrix metalloproteinase-9 (MMP-9) is increased in a number of pathological lung conditions, where the proteinase contributes to deleterious remodelling of the airways. While both lung cancer and COPD are associated with increased MMP-9 expression, the cellular and molecular drivers of MMP-9 remain unresolved. In this study, MMP-9 transcript measured within the tumour region from patients with non-small-cell lung cancer (NSCLC) and coexisting COPD was found to be uniformly increased relative to adjacent tumour-free tissue. MMP-9 gene expression and immunohistochemistry identified tumour-associated neutrophils, but not macrophages, as a predominant source of this proteinase. In addition, PTEN gene expression was significantly reduced in tumour and there was evidence of epithelial MMP-9 expression. To explore whether PTEN can regulate epithelial MMP-9 expression, a small interfering (si)RNA knockdown strategy was used in Beas-2B bronchial epithelial cells. PTEN knockdown by siRNA selectively increased MMP-9 expression in response to lipopolysaccharide in a corticosteroid-insensitive manner. In summary, tumour-associated neutrophils represent an important source of MMP-9 in NSCLC, and loss of epithelial PTEN may further augment steroid-insensitive expression. PMID:28202627

One-Step Hydrothermal Synthesis of Zeolite X Powder from Natural Low-Grade Diatomite.

PubMed

Yao, Guangyuan; Lei, Jingjing; Zhang, Xiaoyu; Sun, Zhiming; Zheng, Shuilin

2018-05-28

Zeolite X powder was synthesized using natural low-grade diatomite as the main source of Si but only as a partial source of Al via a simple and green hydrothermal method. The microstructure and surface properties of the obtained samples were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), wavelength dispersive X-ray fluorescence (XRF), calcium ion exchange capacity (CEC), thermogravimetric-differential thermal (TG-DTA) analysis, and N₂ adsorption-desorption technique. The influence of various synthesis factors, including aging time and temperature, crystallization time and temperature, Na₂O/SiO₂ and H₂O/Na₂O ratio on the CEC of zeolite, were systematically investigated. The as-synthesized zeolite X with binary meso-microporous structure possessed remarkable thermal stability, high calcium ion exchange capacity of 248 mg/g and large surface area of 453 m²/g. In addition, the calcium ion exchange capacity of zeolite X was found to be mainly determined by the crystallization degree. In conclusion, the synthesized zeolite X using diatomite as a cost-effective raw material in this study has great potential for industrial application such as catalyst support and adsorbent.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

Rapid Detection of Tetrodotoxin Using Surface-Enhanced Raman Spectroscopy and Fe3O4/SiO2/Au Gold/Magnetic Nanoparticles

NASA Astrophysics Data System (ADS)

Neng, Jing; Wang, Xujun; Jia, Kan; Sun, Peilong

2018-03-01

Fe3O4 nanoparticles were first modified with tetraethoxylsilane to form Fe3O4/SiO2 nanoparticles, followed by the addition of 3-aminopropyltriethoxysilane and 3-thiolpropyltriethoxysilane to introduce -NH2 and -SH groups to the surface of Fe3O4/SiO2 nanoparticles. Gold nanoparticles were further assembled on the surface of Fe3O4/SiO2 via the electrostatic adsorption of -NH2 and the Au-S bond to produce stable core-shell Fe3O4/SiO2/Au gold/magnetic nanoparticles. These Fe3O4/SiO2/Au gold/magnetic nanoparticles were characterized by a variety of techniques such as transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX), and afterwards conjugated with tetrodotoxin antibodies (Ab) and used as a Raman active substrate (Fe3O4/SiO2/Au-Ab) with Rhodamine B (RhB)-labeled tetrodotoxin antibody as a Raman reporter (Ab-RhB). Upon mixing these reagents with tetrodotoxin (TTX), a sandwich complex [Fe3O4/SiO2/Au-Ab···TTX···Ab-RhB] was generated due to the specific antibody-antigen interactions. The immunocomplex was subsequently separated by an externally applied magnetic source and concentrated into a pellet point, where the laser interrogation of the pellet produced a strong signal characteristic of RhB. The logarithmic intensity of the signal was found to be proportional to the concentration of TTX with a limit of detection of 0.01 μg/mL and a detection linearity range of 0.01-0.5 μg/mL. The established method eliminates the complicated procedures of traditional centrifuging, column separation, and incubation and achieves a rapid detection of tetrodotoxin with improved detection sensitivity.

Fragmentation and hydration of tektites and microtektites

USGS Publications Warehouse

Glass, B.P.; Muenow, D.W.; Bohor, B.F.; Meeker, G.P.

1997-01-01

An examination of data collected over the last 30 years indicates that the percent of glass fragments vs. whole splash forms in the Cenozoic microtektite strewn fields increases towards the source crater (or source region). We propose that this is due to thermal stress produced when tektites and larger microtektites fall into water near the source crater while still relatively hot (>1150 ??C). We also find evidence (low major oxide totals, frothing when melted) for hydration of most of the North American tektite fragments and microtektites found in marine sediments. High-temperature mass spectrometry indicates that these tektite fragments and microtektites contain up to 3.8 wt% H2O. The H2O-release behavior during the high-temperature mass-spectrometric analysis, plus high Cl abundances (???0.05 wt%), indicate that the North. American tektite fragments and microtektites were hydrated in the marine environment (i.e., the H2O was not trapped solely on quenching from a melt). The younger Ivory Coast and Australasian microtektites do not exhibit much evidence of hydration (at least not in excess of 0.5 wt% H2O); this suggests that the degree of hydration increases with age. In addition, we find that some glass spherules (with 65 wt% SiO2 can undergo simple hydration in the marine environment, while impact glasses (with <65 wt% SiO2) can also undergo palagonitization.

High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

NASA Astrophysics Data System (ADS)

Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

2014-06-01

Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

PubMed

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-11-21

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

NASA Astrophysics Data System (ADS)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.

Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

NASA Astrophysics Data System (ADS)

Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

2016-03-01

Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

Parasitic Reactions in Nanosized Silicon Anodes for Lithium-Ion Batteries

DOE PAGES

Gao, Han; Xiao, Lisong; Plumel, Ingo; ...

2017-02-08

When designing nano-Si electrodes for lithium-ion batteries, the detrimental effect of the c-Li 15Si 4 phase formed upon full lithiation is often a concern. In this study, Si nanoparticles with controlled particle sizes and morphology were synthesized and parasitic reactions of the metastable c-Li 15Si 4 phase with the non-aqueous electrolyte was investigated. The use of smaller Si nanoparticles (~ 60 nm) and the addition of fluoroethylene carbonate additive played decisive roles in the parasitic reactions such that the c-Li 15Si 4 phase could disappear at the end of lithiation. This suppression of c-Li 15Si 4 improved cycle life ofmore » the nano-Si electrodes but with a little loss of specific capacity. Also the characteristic c-Li 15Si 4 peak in the dQ/dV plots can be used as an early-stage indicator to cell capacity fade during cycling. Lastly, our findings can contribute to the design guidelines of Si electrodes and allow us to quantify another factor to the performance of the Si electrodes.« less

Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation

NASA Astrophysics Data System (ADS)

Ikarashi, Nobuyuki; Masuzaki, Koji

2011-03-01

Transmission electron microscopy (TEM) and ab initio calculations revealed that the Ni-Si reaction around 300 °C is significantly changed by adding Pt to Ni. TEM analysis clarified that NiSi2 was formed in a reaction between Ni thin film (˜1 nm) and Si substrate, while NiSi was formed when Pt was added to the Ni film. We also found that the Ni-adamantane structure, which acts as a precursor for NiSi2 formation around the reaction temperature, was formed in the former reaction but was significantly suppressed in the latter reaction. Theoretical calculations indicated that Pt addition increased stress at the Ni-adamantane structure/Si-substrate interface. The increase in interface stress caused by Pt addition should raise the interface energy to suppress the Ni-adamantane structure formation, leading to NiSi2 formation being suppressed.

Effect of Co Addition on the Microstructure, Martensitic Transformation and Shape Memory Behavior of Fe-Mn-Si Alloys

NASA Astrophysics Data System (ADS)

Maji, Bikas C.; Krishnan, Madangopal; Sujata, M.; Gouthama; Ray, Ranjit K.

2013-01-01

The effect of Co addition has been studied in Fe-30Mn-6Si- xCo ( x = 0 to 9 wt pct) shape memory alloys in terms of their microstructure, martensitic transformation and shape recovery. Microstructural investigations reveal that in Fe-Mn-Si-Co alloys, the microstructure remains single-phase austenite (γ) up to 5 pct Co and beyond that becomes two-phase comprising γ and off-stoichiometric (Fe,Co)5Mn3Si2 intermetallic π-phases. The forward γ-ɛ martensite transformation start temperature ( M S) decreases with the addition of Co up to 5 pct, and alloys containing more than 5 pct Co, show slightly higher M S possibly on account of two-phase microstructure. Unlike M S, the ɛ-γ reverse transformation start temperature ( A S) has been found to remain almost unaltered by Co addition. In general, addition of Co to Fe-Mn-Si alloys deteriorates shape recovery due to decreasing resistance to plastic yielding concomitant with the formation of stress induced ɛ martensite. However, there is an improvement in shape recovery beyond 5 pct Co addition, possibly due to the strengthening effect arising from the presence of (Fe,Co)5Mn3Si2 precipitates within the two-phase microstructure and due to higher amount of stress induced ɛ martensite.

Effects of the addition of Co, Ni or Cr on the decolorization properties of Fe-Si-B amorphous alloys

NASA Astrophysics Data System (ADS)

Zhang, Changqin; Zhu, Zhengwang; Zhang, Haifeng

2017-11-01

Fe-based amorphous alloys show great potential in degrading azo dyes and other organic pollutants, and are widely investigated as a kind of environmental-friendly materials for wastewater remediation. In this paper, the effects of Co, Ni or Cr addition on the decolorization properties of Fe-Si-B amorphous alloys were studied, and the mechanism of their different effects was analyzed. Co addition could lower the activation energy of Fe-Si-B amorphous alloys in decolorizing azo dyes, and had no weakening effect on the decolorization capability of Fe-Si-B amorphous alloys. Ni addition led to partial crystallization of Fe-Si-B amorphous alloys, and the decolorization mechanism at low temperatures changed from chemical degradation to physical adsorption. Cr addition could enhance the corrosion resistance of Fe-Si-B amorphous alloys, but the amorphous alloys completely lost the decolorization capability no matter at lower or higher temperatures. The results of X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) indicated that the addition of Co, Ni or Cr could generate different surface structures that had significant influences on the decolorization process. Our work demonstrated that the effiecient decolorization of azo dyes by Fe-based alloys could be realized only when amorphous nature and incompact surface structure were simultaneously achieved for the alloys.

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

PubMed

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

PubMed

Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

2016-07-01

We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. © The Author(s) 2016.

Silicon carbide whisker-zirconia reinforced mullite and alumina ceramics

DOEpatents

Becher, Paul F.; Tiegs, Terry N.

1987-01-01

The flexural strength and/or fracture toughness of SiC whisker-reinforced composites utilizing mullite or alumina as the matrix material for the composite are increased by the addition of zirconia in a monoclinic or tetragonal phase to the matrix. The zirconia addition also provides for a lower hot-pressing temperature and increases the flexural strength and/or fracture toughness of the SiC whisker-reinforced composites over SiC whisker-reinforced composites of the similar matrix materials reinforced with similar concentrations of SiC whiskers.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

The role of silicon in physiology of the medicinal plant (Lonicera japonica L.) under salt stress

NASA Astrophysics Data System (ADS)

Gengmao, Zhao; Shihui, Li; Xing, Sun; Yizhou, Wang; Zipan, Chang

2015-08-01

Silicon(Si) is the only element which can enhance the resistance to multiple stresses. However, the role of silicon in medicinal plants under salt stress is not yet understood. This experiment was conducted to study the effects of silicon addition on the growth, osmotic adjustments, photosynthetic characteristics, chloroplast ultrastructure and Chlorogenic acid (CGA) production of Honeysuckle plant (Lonicera japonica L.) under salt-stressed conditions. Salinity exerted an adverse effect on the plant fresh weight and dry weight, whilst 0.5 g L-1 K2SiO3·nH2O addition obviously improved the plant growth. Although Na+ concentration in plant organs was drastically increased with increasing salinity, higher levels of K+/Na+ ratio was obtained after K2SiO3·nH2O addition. Salinity stress induced the destruction of the chloroplast envelope; however, K2SiO3·nH2O addition counteracted the adverse effect by salinity on the structure of the photosynthetic apparatus. K2SiO3·nH2O addition also enhanced the activities of superoxide dismutase and catalase. To sum up, exogenous Si plays a key role in enhancing its resistance to salt stresses in physiological base, thereby improving the growth and CGA production of Honeysuckle plant.

First mm-VLBI Observations between the TRAO 14-m and the NRO 45-m Telescopes: Observations of 86 GHz SiO Masers in VY Canis Majoris

NASA Astrophysics Data System (ADS)

Shibata, Katsunori M.; Chung, Hyung-Soo; Kameno, Seiji; Roh, Duk-Gyoo; Umemoto, Tomofumi; Kim, Kwang-Dong; Asada, Keiichi; Han, Seog-Tae; Mochizuki, Nanako; Cho, Se-Hyung; Sawada-Satoh, Satoko; Kim, Hyun-Goo; Bushimata, Takeshi; Minh, Young Chol; Miyaji, Takeshi; Kuno, Nario; Mikoshiba, Hiroshi; Sunada, Kazuyoshi; Inoue, Makoto; Kobayashi, Hideyuki

2004-06-01

We have made VLBI observations at 86GHz using a 1000-km baseline between Korea and Japan with successful detections of SiO v = 1, J = 2 - 1 maser emissions from VY CMa and Orion KL in 2001 June. This was the first VLBI result for this baseline and the first astronomical VLBI observation for the Korean telescope. Since then, we observed SiO v = 1, J = 2 - 1 maser emission in VY CMa in 2002 January and 2003 February and derived the distributions of the maser emissions. Our results show that the maser emissions extend over 2-4 stellar radii, and were within the inner radius of the dust shell. We observed other SiO maser sources and continuum sources, and 86-GHz continuum emissions were detected from three continuum sources. It was verified that this baseline has a performance comparable to the most sensitive baseline in the VLBA and the CMVA, and is capable of investigating the proper motions of maser features in circumstellar envelopes using monitoring observations.

40 CFR 60.4239 - What are my compliance requirements if I am a manufacturer of stationary SI internal combustion...

Code of Federal Regulations, 2010 CFR

2010-07-01

... I am a manufacturer of stationary SI internal combustion engines >19 KW (25 HP) that use gasoline or... NEW STATIONARY SOURCES Standards of Performance for Stationary Spark Ignition Internal Combustion... manufacturer of stationary SI internal combustion engines >19 KW (25 HP) that use gasoline or a manufacturer of...

Landscape cultivation alters δ30Si signature in terrestrial ecosystems.

NASA Astrophysics Data System (ADS)

Vandevenne, F. I.; Delvaux, C.; Huyghes, H.; Ronchi, B.; Govers, G.; Barão, A. L.; Clymans, W.; Meire, P.; André, L.; Struyf, E.

2014-12-01

Despite increasing recognition of the importance of biological Si cycling in controlling dissolved Si (DSi) in soil and stream water, effects of human cultivation on the Si cycle remain poorly understood. Sensitive tracer techniques to identify and quantify Si in the soil-plant-water system could be highly relevant in addressing these uncertainties. Stable Si isotopes are promising tools to define Si sources and sinks along the ecosystem flow path, as intense fractionation occurs during chemical weathering and uptake of dissolved Si in plants. Yet they remain underexploited in the end product of the soil-plant system: the soil water. Here, stable Si isotope ratios (δ30Si) of dissolved Si in soil water were measured along a land use gradient (continuous forest, continuous pasture, young cropland and continuous cropland) with similar parent material (loess) and homogenous bulk mineralogical and climatological properties (Belgium). Soil water δ30Si signatures are clearly separated along the gradient, with highest average signatures in continuous cropland (+1.61‰), intermediate in pasture (+1.05‰) and young cropland (+0.89 ‰) and lowest in forest soil water (+0.62‰). Our data do not allow distinguishing biological from pedogenic/lithogenic processes, but point to a strong interaction of both. We expect that increasing export of light isotopes in disturbed land uses (i.e. through agricultural harvest), and higher recycling of 28Si and elevated weathering intensity (including clay dissolution) in forest systems will largely determine soil water δ30Si signatures of our systems. Our results imply that soil water δ30Si signature is biased through land management before it reaches rivers and coastal zones, where other fractionation processes take over (e.g. diatom uptake and reverse weathering in floodplains). In particular, a direct role of agriculture systems in lowering export Si fluxes towards rivers and coastal systems has been shown. Stable Si isotopes have a large potential to track human disturbance on the Si cycle, including subtle changes in clay evolution and biogenic sink/source functions as induced by land use conversions.

Landscape cultivation alters δ30Si signature in terrestrial ecosystems

NASA Astrophysics Data System (ADS)

Vandevenne, Floor; Delvaux, Claire; Hughes, Harold; Ronchi, Benedicta; Clymans, Wim; Barao, Ana Lucia; Govers, Gerard; Cornelis, Jean Thomas; André, Luc; Struyf, Eric

2015-04-01

Despite increasing recognition of the importance of biological Si cycling in controlling dissolved Si (DSi) in soil and stream water, effects of human cultivation on the Si cycle remain poorly understood. Sensitive tracer techniques to identify and quantify Si in the soil-plant-water system could be highly relevant in addressing these uncertainties. Stable Si isotopes are promising tools to define Si sources and sinks along the ecosystem flow path, as intense fractionation occurs during chemical weathering and uptake of dissolved Si in plants. Yet they remain underexploited in the end product of the soil-plant system: the soil water. Here, stable Si isotope ratios (δ30Si) of dissolved Si in soil water were measured along a land use gradient (continuous forest, continuous pasture, young cropland and continuous cropland) with similar parent material (loess) and homogenous bulk mineralogical and climatological (Belgium). Soil water δ30Si signatures are clearly separated along the gradient, with highest average signatures in continuous cropland (+1.61%), intermediate in pasture (+1.05%) and young cropland (+0.89%) and lowest in forest soil water (+0.62%). Our data do not allow distinguishing biological from pedogenic/lithogenic processes, but point to a strong interaction of both. We expect that increasing export of light isotopes in disturbed land uses (i.e. through agricultural harvest), and higher recycling of 28Si and elevated weathering intensity (including clay dissolution) in forest systems will largely determine soil water δ30Si signatures of our systems. Our results imply that soil water δ30Si signature is biased through land management before it reaches rivers and coastal zones, where other fractionation processes take over (e.g. diatom uptake and reverse weathering in floodplains). In particular, a direct role of agriculture systems in lowering export Si fluxes towards rivers and coastal systems has been shown. Stable Si isotopes have a large potential to track human disturbance on the Si cycle, including subtle changes in clay evolution and biogenic sink/source functions as induced by land use conversions.

Effects of Some Light Alloying Elements on the Oxidation Behavior of Fe and Ni-Cr Based Alloys During Air Plasma Spraying

NASA Astrophysics Data System (ADS)

Zeng, Zhensu; Kuroda, Seiji; Kawakita, Jin; Komatsu, Masayuki; Era, Hidenori

2010-01-01

The oxidation behavior of iron binary powders with addition of Si (1, 4 wt.%) and B (1, 3 wt.%) and that of a Ni-Cr based alloy powder with Si (4.3 wt.%), B (3.0 wt.%), and C (0.8 wt.%) additions during atmosphere plasma spray (APS) have been investigated. Analysis of the chemical composition and phases of oxides in the captured in-flight particles and deposited coatings was carried out. The results show that the addition of Si and B to iron effectively reduced the oxygen contents in the coatings, especially during the in-flight period at higher particles temperature. Ni-Cr based alloy powder with Si, B, and C additions reduced the oxidation of the base alloys significantly. Preferential oxidation and subsequent vaporization of Si, B, and C from the surface of the sprayed particles are believed to play a major role in controlling oxidation in the APS process.

Effects of silicon additions on oxidation and mechanical behavior of the nickel-base superalloy B-1900

NASA Technical Reports Server (NTRS)

Miner, R. V., Jr.; Lowell, C. E.

1975-01-01

Test specimens with nominal additions of Si were tested in oxidation, thermal fatigue, sulfidation, tension, and stress rupture, and were also extensively studied metallographically. Alloy B-1900 modified with 0.6- or 1.2-wt% Si exhibited oxidation resistance equivalent to that of aluminide-coated B-1900 during cyclic, high-gas-velocity oxidation tests. Resistances to thermal fatigue and sulfidation were improved by the Si additions, but were not superior to aluminide-coated B-1900. Stress-rupture tests at 1000 C of specimens given the standard heat treatment to simulate an aluminide coating cycle showed Si to be detrimental. However, application of another heat treatment increased the rupture life of the alloy with 0.6-wt% Si to that of the unmodified B-1900 given the standard heat treatment.

Preparation of xerogel SiO2 from roasted iron sand under various acidic solution

NASA Astrophysics Data System (ADS)

Ramelan, A. H.; Wahyuningsih, S.; Ismoyo, Y. A.; Pranata, H. P.; Munawaroh, H.

2016-11-01

Xerogel SiO2 had been prepared from roasted iron sand through variation of Na2CO3 addition and sol-gel process under various acidic solution. Roasting treatment was carried out on the compositional variation of iron sand:Na2CO3 = 1:2; 1:1 and 2:1 at 1100 °C. While the sol-gel process was conducted at room temperature and neutralized using HCl 0.1 M and 6 M. The color characteristics of roasted iron sand shown light brown, dark brown and dark gray of the compositional variation of iron sand:Na2CO3 = 1:2; 1:1 and 2:1, respectively. In addition, the levels of thoughness increased by increasing the ratio of sand in the composition of the mixture. The best composition of roasted treatment was at a variety of iron sand:Na2SiO3 = 1:2 with 57.72% had been dissolved in hot water. The addition of Na2CO3 will influence the Na2SiO3 formation, because of the increase of Na2CO3 capable produced the iron sand decomposition product. Na2SiO3 gel had been produced after it was neutralized with certain amount of HCl solution. The neutralization was more effective if using high concentration of HCl because of the formation of gel SiO2 will be easier occurred. The results of SiO2 had been identified by the FTIR spectra, which an absorption spectra of Si-O-Si asymmetric stretching at 1098.51 cm-1, symmetric stretching of Si-O-Si at 804.35 cm-1 and the bending O-Si-O at 469.69 cm'1. The result of SiO2 content by XRF analysis is about 85.15%.

Magnetic Fields in Evolved Stars: Imaging the Polarized Emission of High-frequency SiO Masers

NASA Astrophysics Data System (ADS)

Vlemmings, W. H. T.; Humphreys, E. M. L.; Franco-Hernández, R.

2011-02-01

We present Submillimeter Array observations of high-frequency SiO masers around the supergiant VX Sgr and the semi-regular variable star W Hya. The J = 5-4, v = 128SiO and v = 029SiO masers of VX Sgr are shown to be highly linearly polarized with a polarization from ~5% to 60%. Assuming the continuum emission peaks at the stellar position, the masers are found within ~60 mas of the star, corresponding to ~100 AU at a distance of 1.57 kpc. The linear polarization vectors are consistent with a large-scale magnetic field, with position and inclination angles similar to that of the dipole magnetic field inferred in the H2O and OH maser regions at much larger distances from the star. We thus show for the first time that the magnetic field structure in a circumstellar envelope can remain stable from a few stellar radii out to ~1400 AU. This provides further evidence supporting the existence of large-scale and dynamically important magnetic fields around evolved stars. Due to a lack of parallactic angle coverage, the linear polarization of masers around W Hya could not be determined. For both stars, we observed the 28SiO and 29SiO isotopologues and find that they have a markedly different distributions and that they appear to avoid each other. Additionally, emission from the SO 55-44 line was imaged for both sources. Around W Hya, we find a clear offset between the red- and blueshifted SO emission. This indicates that W Hya is likely host to a slow bipolar outflow or a rotating disk-like structure.

SiPMs characterization and selection for the DUNE far detector photon detection system

NASA Astrophysics Data System (ADS)

Sun, Y.; Maricic, J.

2016-01-01

The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

NASA Astrophysics Data System (ADS)

Rahmani, Faezeh; Khosravinia, Hossein

2016-08-01

Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm-2 of Nickle-63 (63Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure.

SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

PubMed Central

2009-01-01

SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism. PMID:20596456

SiS in Circumstellar Shells

NASA Astrophysics Data System (ADS)

Sahai, R.; Wootten, A.; Clegg, R. E. S.

1985-07-01

The author has observed the spectrum of SiS toward the Mira variable IRC+10216, and made a detailed model incorporating a radial SiS abundance gradient due to photodissociation by interstellar UV (Sahai, Wootten, and Clegg 1984). The sensitive search for SiS J = 7-6 and J = 6-5 lines in other carbon-rich, oxygen-rich, and S-type envelopes has revealed three new sources, CIT 6, CRL 2688 and IRC+20370, all of which are carbon-rich.

Direct Imaging of Stellar Surfaces: Results from the Stellar Imager (SI) Vision Mission Study

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth; Schrijver, Carolus; Karovska, Margarita

2006-01-01

The Stellar Imager (SI) is a UV-Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and stellar interiors (via asteroseismology) and of the Universe in general. SI is identified as a "Flagship and Landmark Discovery Mission'' in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory'' in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes: The 0.1 mas resolution of this deep-space telescope will transform point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. In this paper we will discuss the results of the SI Vision Mission Study, elaborating on the science goals of the SI Mission and a mission architecture that could meet those goals.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

PubMed

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

Improved magnetic properties and growth anisotropy of chemically modified Sr ferrites

NASA Astrophysics Data System (ADS)

Lee, Jung W.; Cho, Yong S.; Amarakoon, Vasantha R. W.

1999-04-01

Magnetic properties and microstructural characteristics of SrOṡ5.9Fe2O3 chemically modified with Si and Ca were investigated by changing experimental parameters such as additive composition, the ratio of Ca/Si, and sintering condition. A novel particulate coating method utilizing sol-gel reactions was used to uniformly incorporate the additives of Si and Ca. This method was very successful in obtaining homogeneous grain growth and fine grains. A sample containing the gel additives of 0.6 wt % SiO2 and 0.7 wt % CaO and sintered at 1200 °C for 4 h was found to significantly suppress abnormal grain growth, resulting in submicron-sized grains and high density. A distinct grain boundary phase containing Si and Ca was observed by increasing the sintering temperature to 1250 °C. The resultant microstructural characteristics favorably affected magnetic properties. For example, the chemically modified sample exhibited a higher coercivity of 3530 Oe compared to a value of 2050 Oe obtained for the sample without the additives. On the other hand, an increase in the ratio of Ca/Si or in sintering temperature tended to induce a large anisotropy during grain growth.

Development of casting investment preventing blackening of noble metal alloys part 3. Effect of reducing agent addition on the strength and expansion of the investments.

PubMed

Meng, Yukun; Nakai, Akira; Ogura, Hideo

2004-06-01

Different reducing agents (B, Al, Si and Ti) were individually added to two gypsum-bonded investments to prepare investments preventing surface blackening of some noble cast alloys. The effect of different additive contents on green-body and burnout compressive strength, setting and thermal expansion of the investments were evaluated. The strength and expansion of the investments were changed by the additives. The compressive strength of Al-, Si- and Ti-added investments decreased with the increase of additive contents. The burnout strength of B-added investments significantly increased while green-body strength remained unchanged. The setting expansion of the B-added investments increased while those of the Al-, Si- and Ti-added investments decreased with the increase of additive contents. The thermal expansion of the Si- and Ti-added investments decreased, and that of the Al- and B-added investments remained unchanged. Further study is necessary to evaluate the effects of these additives on the accuracy of dental castings.

Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Nakamura, Yoshiaki; Ueda, Tomohiro; Takeuchi, Shotaro; Sakai, Akira

2015-01-01

Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal conductivities than those of the conventional nanostructured SiGe bulk alloys, despite the stacked structures having a smaller Ge fraction. This came from the large thermal resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon scattering can be controlled by the Ge ND structure, which was independent of Si layer structure for carrier transport. These results demonstrate the effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources, opening up a route for the realisation of Si-based thermoelectric materials. PMID:26434678

C incorporation and segregation during Si 1- yC y/Si( 0 0 1 ) gas-source molecular beam epitaxy from Si 2H 6 and CH 3SiH 3

NASA Astrophysics Data System (ADS)

Foo, Y. L.; Bratland, K. A.; Cho, B.; Soares, J. A. N. T.; Desjardins, P.; Greene, J. E.

2002-08-01

We have used in situ D 2 temperature-programmed desorption (TPD) to probe C incorporation and surface segregation kinetics, as well as hydrogen desorption pathways, during Si 1- yC y(0 0 1) gas-source molecular beam epitaxy from Si 2H 6/CH 3SiH 3 mixtures at temperatures Ts between 500 and 650 °C. Parallel D 2 TPD results from C-adsorbed Si(0 0 1) wafers exposed to varying CH 3SiH 3 doses serve as reference data. Si 1- yC y(0 0 1) layer spectra consist of three peaks: first-order β 1 at 515 °C and second-order β 2 at 405 °C, due to D 2 desorption from Si monodeuteride and dideuteride phases, as well as a new second-order C-induced γ 1 peak at 480 °C. C-adsorbed Si(0 0 1) samples with very high CH 3SiH 3 exposures yielded a higher-temperature TPD feature, corresponding to D 2 desorption from surface C atoms, which was never observed in Si 1- yC y(0 0 1) layer spectra. The Si 1- yC y(0 0 1) γ 1 peak arises due to desorption from Si monodeuteride species with C backbonds. γ 1 occurs at a lower temperature than β 1 reflecting the lower D-Si * bond strength, where Si * represents surface Si atoms bonded to second-layer C atoms, as a result of charge transfer from dangling bonds. The total integrated monohydride (β 1+γ 1) intensity, and hence the dangling bond density, remains constant with y indicating that C does not deactivate surface dangling bonds as it segregates to the second-layer during Si 1- yC y(0 0 1) growth. Si * coverages increase with y at constant Ts and with Ts at constant y. The positive Ts-dependence shows that C segregation is kinetically limited at Ts⩽650 °C. D 2 desorption activation energies from β 1, γ 1 and β 2 sites are 2.52, 2.22 and 1.88 eV.

Development of a Si-PM based alpha camera for plutonium detection in nuclear fuel facilities

NASA Astrophysics Data System (ADS)

Morishita, Yuki; Yamamoto, Seiichi; Izaki, Kenji; Kaneko, Junichi H.; Toi, Kohei; Tsubota, Youichi

2014-05-01

Alpha particles are monitored for detecting nuclear fuel material (i.e., plutonium and uranium) at nuclear fuel facilities. Currently, for monitoring the airborne contamination of nuclear fuel, only energy information measured by Si-semiconductor detectors is used to distinguish nuclear fuel material from radon daughters. In some cases, however, such distinguishing is difficult when the radon concentration is high. In addition, a Si-semiconductor detector is generally sensitive to noise. In this study, we developed a new alpha-particle imaging system by combining a Si-PM array, which is insensitive to noise, with a Ce-doped Gd3Al2Ga3O12(GAGG) scintillator, and evaluated our developed system's fundamental performance. The scintillator was 0.1-mm thick, and the light guide was 3.0 mm thick. An 241Am source was used for all the measurements. We evaluated the spatial resolution by taking an image of a resolution chart. A 1.6 lp/mm slit was clearly resolved, and the spatial resolution was estimated to be less than 0.6-mm FWHM. The energy resolution was 13% FWHM. A slight distortion was observed in the image, and the uniformity near its center was within ±24%. We conclude that our developed alpha-particle imaging system is promising for plutonium detection at nuclear fuel facilities.

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

NASA Astrophysics Data System (ADS)

Geenen, F. A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, C.

2018-02-01

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of tc = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 ° C , thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of "thickness gradients," which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness tc. The results are discussed in the framework of classical nucleation theory.

Hybrid Simulation of Duty Cycle Influences on Pulse Modulated RF SiH4/Ar Discharge

NASA Astrophysics Data System (ADS)

Wang, Xifeng; Song, Yuanhong; Zhao, Shuxia; Dai, Zhongling; Wang, Younian

2016-04-01

A one-dimensional fluid/Monte-Carlo (MC) hybrid model is developed to describe capacitively coupled SiH4/Ar discharge, in which the lower electrode is applied by a RF source and pulse modulated by a square-wave, to investigate the modulation effects of the pulse duty cycle on the discharge mechanism. An electron Monte Carlo simulation is used to calculate the electron energy distribution as a function of position and time phase. Rate coefficients in chemical reactions can then be obtained and transferred to the fluid model for the calculation of electron temperature and densities of different species, such as electrons, ions, and radicals. The simulation results show that, the electron energy distribution f(ɛ) is modulated evidently within a pulse cycle, with its tail extending to higher energies during the power-on period, while shrinking back promptly in the afterglow period. Thus, the rate coefficients could be controlled during the discharge, resulting in modulation of the species composition on the substrate compared with continuous excitation. Meanwhile, more negative ions, like SiH-3 and SiH-2, may escape to the electrodes owing to the collapse of ambipolar electric fields, which is beneficial to films deposition. Pulse modulation is thus expected to provide additional methods to customize the plasma densities and components. supported by National Natural Science Foundation of China (No. 11275038)

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

NASA Technical Reports Server (NTRS)

Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

NASA Astrophysics Data System (ADS)

Haiping, Shang; Qiuxia, Xu

2010-05-01

By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

Silicon Photomultipliers for Compact Neutron Scatter Cameras

NASA Astrophysics Data System (ADS)

Ruch, Marc L.

The ability to locate and identify special nuclear material (SNM) is critical for treaty verification and emergency response applications. SNM is used as the nuclear explosive in a nuclear weapon. This material emits neutrons, either spontaneously or when interrogated. The ability to form an image of the neutron source can be used for characterization and/or to confirm that the item is a weapon by determining whether its shape is consistent with that of a weapon. Additionally, treaty verification and emergency response applications might not be conducive to non-portable instruments. In future weapons treaties, for example, it is unlikely that host countries will make great efforts to facilitate large, bulky, and/or fragile inspection equipment. Furthermore, inspectors and especially emergency responders may need to access locations not easily approachable by vehicles. Therefore, there is a considerable need for a compact, human-portable neutron imaging system. Of the currently available neutron imaging technologies, only neutron scatter cameras (NSCs) can be made truly compact because aperture-based imagers, and time-encoded imagers, rely on large amounts of materials to modulate the neutron signal. NSCs, in contrast, can be made very small because most of the volume of the imager can be filled with active detector material. Also, unlike other neutron imaging technologies, NSCs have the inherent ability to act as neutron spectrometers which gives them an additional means of identifying a neutron source. Until recently, NSCs have relied on photomultiplier tubes (PMT) readouts, which are bulky and fragile, require high voltage, and are very sensitive to magnetic fields. Silicon photomultipliers (SiPMs) do not suffer from these drawbacks and are comparable to PMTs in many respects such as gain, and cost with better time resolution. Historically, SiPMs have been too noisy for these applications; however, recent advancements have greatly reduced this issue and they have now been shown to be viable alternatives to PMTs for neutron detection applications. In this thesis, the development of a handheld NSC based on SiPMs coupled to stilbene bars is presented. An algorithm for performing image reconstruction with this type of device is detailed. Prototype design optimization is achieved using a series of simulations and the construction of the optimized prototype is described. The device is calibrated through a series of collimated measurements, backscatter-gated measurements, and a time-of-flight measurement. Experimental imaging and spectroscopic results are presented for a measurement of a Cf-252 spontaneous fission source. Simulated detector response, based on measurements performed with components of the design, demonstrates that fission sources of different sizes would be distinguishable. Notably, a significant quantity of plutonium can be confidently distinguished from a point neutron source.

Multiresponsive polysiloxane bearing spiropyran: synthesis and sensing of pH and metal ions of different valence

NASA Astrophysics Data System (ADS)

Li, Hongqi; Zheng, Tao; Zhao, Yong; Xu, Zhenxiang; Dai, Xuhang; Shao, Zhiyu

2018-03-01

A spiropyran-appended polysiloxane (SP-Si) was synthesized and characterized. The pH-responsive behavior of SP-Si was investigated. It was found that with the decrease of the pH of SP-Si solution the intensity of the absorption peak at 440 nm increased and the color of SP-Si solution turned from colorless to yellow gradually. The polymer serves as chemosensor for colorimetric detection of Ag+ and Fe3+ ions. Addition of Ag+ and Fe3+ ions to SP-Si solution induced color change from colorless to brown and earthy yellow, respectively. Sensing of Ag+ ions by SP-Si was not affected by common competitive metal ions except Hg2+ ions. Based on the transformation from colorless SP-Si solution with negligible absorption at 440 nm to brown SP-Si/Ag+ showing extremely strong absorption at 440 nm by addition of Ag+ ions and subsequent transformation from brown to colorless SP-Si/Ag+/Hg2+ with relatively weak absorption at 440 nm after addition of 1 equivalent of Hg2+ ions, SP-Si/Ag+ system serves as a dual colorimetric and spectroscopic probe for highly selective and sensitive detection of Hg2+ ions. The selective detection of Fe3+ ions by SP-Si is not interfered by common competitive metal ions including Na+, K+, Li+, Hg2+, Ni2+, Fe2+, Zn2+, Co2+, Sr2+, Cu2+, Al3+, Ce3+ and Cr3+. The detection limit of Ag+ and Fe3+ ions is 1.45 × 10-6 M and 3.52 × 10-6 M, respectively.

On the Alloying and Properties of Tetragonal Nb5Si3 in Nb-Silicide Based Alloys

PubMed Central

Tsakiropoulos, Panos

2018-01-01

The alloying of Nb5Si3 modifies its properties. Actual compositions of (Nb,TM)5X3 silicides in developmental alloys, where X = Al + B + Ge + Si + Sn and TM is a transition and/or refractory metal, were used to calculate the composition weighted differences in electronegativity (Δχ) and an average valence electron concentration (VEC) and the solubility range of X to study the alloying and properties of the silicide. The calculations gave 4.11 < VEC < 4.45, 0.103 < Δχ < 0.415 and 33.6 < X < 41.6 at.%. In the silicide in Nb-24Ti-18Si-5Al-5Cr alloys with single addition of 5 at.% B, Ge, Hf, Mo, Sn and Ta, the solubility range of X decreased compared with the unalloyed Nb5Si3 or exceeded 40.5 at.% when B was with Hf or Mo or Sn and the Δχ decreased with increasing X. The Ge concentration increased with increasing Ti and the Hf concentration increased and decreased with increasing Ti or Nb respectively. The B and Sn concentrations respectively decreased and increased with increasing Ti and also depended on other additions in the silicide. The concentration of Sn was related to VEC and the concentrations of B and Ge were related to Δχ. The alloying of Nb5Si3 was demonstrated in Δχ versus VEC maps. Effects of alloying on the coefficient of thermal expansion (CTE) anisotropy, Young’s modulus, hardness and creep data were discussed. Compared with the hardness of binary Nb5Si3 (1360 HV), the hardness increased in silicides with Ge and dropped below 1360 HV when Al, B and Sn were present without Ge. The Al effect on hardness depended on other elements substituting Si. Sn reduced the hardness. Ti or Hf reduced the hardness more than Cr in Nb5Si3 without Ge. The (Nb,Hf)5(Si,Al)3 had the lowest hardness. VEC differentiated the effects of additions on the hardness of Nb5Si3 alloyed with Ge. Deterioration of the creep of alloyed Nb5Si3 was accompanied by decrease of VEC and increase or decrease of Δχ depending on alloying addition(s). PMID:29300327

Hyperedge bundling: Data, source code, and precautions to modeling-accuracy bias to synchrony estimates.

PubMed

Wang, Sheng H; Lobier, Muriel; Siebenhühner, Felix; Puoliväli, Tuomas; Palva, Satu; Palva, J Matias

2018-06-01

It has not been well documented that MEG/EEG functional connectivity graphs estimated with zero-lag-free interaction metrics are severely confounded by a multitude of spurious interactions (SI), i.e., the false-positive "ghosts" of true interactions [1], [2]. These SI are caused by the multivariate linear mixing between sources, and thus they pose a severe challenge to the validity of connectivity analysis. Due to the complex nature of signal mixing and the SI problem, there is a need to intuitively demonstrate how the SI are discovered and how they can be attenuated using a novel approach that we termed hyperedge bundling. Here we provide a dataset with software with which the readers can perform simulations in order to better understand the theory and the solution to SI. We include the supplementary material of [1] that is not directly relevant to the hyperedge bundling per se but reflects important properties of the MEG source model and the functional connectivity graphs. For example, the gyri of dorsal-lateral cortices are the most accurately modeled areas; the sulci of inferior temporal, frontal and the insula have the least modeling accuracy. Importantly, we found the interaction estimates are heavily biased by the modeling accuracy between regions, which means the estimates cannot be straightforwardly interpreted as the coupling between brain regions. This raise a red flag that the conventional method of thresholding graphs by estimate values is rather suboptimal: because the measured topology of the graph reflects the geometric property of source-model instead of the cortical interactions under investigation.

Si /SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning

NASA Astrophysics Data System (ADS)

Suet, Z.; Paul, D. J.; Zhang, J.; Turner, S. G.

2007-05-01

In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si /SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate linear current-voltage characteristics, while a 15min hydrogen clean produces negative differential resistance with peak-to-valley current ratios up to 2.2 and peak current densities of 5.0A/cm2 at 30K. Analysis of the valley current and the band structure of the devices suggest methods for increasing the operating temperature of Si /SiGe resonant tunneling diodes as required for applications.

Influence of Lanthanum on Solidification, Microstructure, and Mechanical Properties of Eutectic Al-Si Piston Alloy

NASA Astrophysics Data System (ADS)

Ahmad, R.; Asmael, M. B. A.

2016-07-01

The effects of Lanthanum (La) concentration on the solidification parameters of the α-Al, Al-Si, and Al-Cu phases and on the microstructure, tensile, and hardness properties of eutectic Al-Si-Cu-Mg alloy were systematically investigated. The solidification parameters were examined using computer-aided cooling curve thermal analysis (CA-CCTA). The cooling curve and microstructure analysis showed that La altered the Si structure. The nucleation and growth temperatures of eutectic Si decreased when 0.3 wt.% La was added, and a high depression temperature was obtained with 1.0 wt.% La. High amounts of La considerably modified the Si structure and decreased the area and aspect ratio by 69.9 and 51%, respectively. The thermal analysis result recorded a faster freezing time with the La addition and a 36% alteration in the secondary dendrite arm spacing. Two secondary or ternary La-rich intermetallic phases were formed with needle- and plate-like structures. Furthermore, the mechanical properties were investigated by hardness and tensile tests with different La concentrations. The addition of small amounts of La (0.1 wt.%) significantly improved the ultimate tensile strength and quality index of the Al-Si-Cu-Mg alloy. In addition, the hardness value of Al-11Si-Cu increased by 7-8% with the increasing amount of La added.

Escaping the Tyranny of Carbothermal Reduction: Fumed Silica from Sustainable, Green Sources without First Having to Make SiCl4.

PubMed

Yi, Eongyu; Hyde, Clare E; Sun, Kai; Laine, Richard M

2016-02-12

Fumed silica is produced in 1000 tons per year quantities by combusting SiCl4 in H2 /O2 flames. Given that both SiCl4 and combustion byproduct HCl are corrosive, toxic and polluting, this route to fumed silica requires extensive safeguards that may be obviated if an alternate route were found. Silica, including rice hull ash (RHA) can be directly depolymerized using hindered diols to generate distillable spirocyclic alkoxysilanes or Si(OEt)4 . We report here the use of liquid-feed flame spray pyrolysis (LF-FSP) to combust the aforementioned precursors to produce fumed silica very similar to SiCl4 -derived products. The resulting powders are amorphous, necked, <50 nm average particle sizes, with specific surface areas (SSAs) of 140-230 m(2)  g(-1) . The LF-FSP approach does not require the containment constraints of the SiCl4 process and given that the RHA silica source is produced in million ton per year quantities worldwide, the reported approach represents a sustainable, green and potentially lower-cost alternative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

DOE PAGES

Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

2015-06-21

In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U 3Si 2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U 3Si 2 has been optimized and high phase purity U 3Si 2 has been successfully produced. Results are presentedmore » from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm 3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

On the Selective Laser Melting (SLM) of the AlSi10Mg Alloy: Process, Microstructure, and Mechanical Properties

PubMed Central

Trevisan, Francesco; Calignano, Flaviana; Lorusso, Massimo; Pakkanen, Jukka; Aversa, Alberta; Ambrosio, Elisa Paola; Lombardi, Mariangela; Fino, Paolo; Manfredi, Diego

2017-01-01

The aim of this review is to analyze and to summarize the state of the art of the processing of aluminum alloys, and in particular of the AlSi10Mg alloy, obtained by means of the Additive Manufacturing (AM) technique known as Selective Laser Melting (SLM). This process is gaining interest worldwide, thanks to the possibility of obtaining a freeform fabrication coupled with high mechanical properties related to a very fine microstructure. However, SLM is very complex, from a physical point of view, due to the interaction between a concentrated laser source and metallic powders, and to the extremely rapid melting and the subsequent fast solidification. The effects of the main process variables on the properties of the final parts are analyzed in this review: from the starting powder properties, such as shape and powder size distribution, to the main process parameters, such as laser power and speed, layer thickness, and scanning strategy. Furthermore, a detailed overview on the microstructure of the AlSi10Mg material, with the related tensile and fatigue properties of the final SLM parts, in some cases after different heat treatments, is presented. PMID:28772436

Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S.; Darma, Y.

In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by meanmore » XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.« less

Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

NASA Astrophysics Data System (ADS)

Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

2017-04-01

In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U 3Si 2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U 3Si 2 has been optimized and high phase purity U 3Si 2 has been successfully produced. Results are presentedmore » from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm 3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

THE CURIOUS CASE OF THE ALPHA PERSEI CORONA: A DWARF IN SUPERGIANT'S CLOTHING?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayres, Thomas R., E-mail: Thomas.Ayres@Colorado.edu

2011-09-10

Alpha Persei (HD 20902: F5 Iab) is a luminous, nonvariable supergiant located at the blue edge of the Cepheid instability strip. It is one of the brightest coronal X-ray sources in the young open cluster bearing its name, yet warm supergiants as a class generally avoid conspicuous high-energy activity. The Cosmic Origins Spectrograph on the Hubble Space Telescope has recently uncovered additional oddities. The 1290-1430 A far-ultraviolet (FUV) spectrum of {alpha} Per is dominated by photospheric continuum emission, with numerous superposed absorption features, mainly stellar. However, the normal proxies of coronal activity, such as the Si IV 1400 A doubletmore » (T {approx} 8 x 10{sup 4} K), are very weak, as are the chromospheric C II 1335 A multiplet (T {approx} 3 x 10{sup 4} K) and O I 1305 A triplet. In fact, the Si IV features of {alpha} Per are not only narrower than those of later, G-type supergiants of similar L{sub X}/L{sub bol}, but are also fainter (in L{sub SiIV}/L{sub bol}) by two orders of magnitude. Further, a reanalysis of the ROSAT pointing on {alpha} Per finds the X-ray centroid offset from the stellar position by 9'', at a moderate level of significance. The FUV and X-ray discrepancies raise the possibility that the coronal source might be unrelated to the supergiant, perhaps an accidentally close dwarf cluster member; heretofore unrecognized in the optical, lost in the glare of the bright star.« less

Knowledge and practice of healthcare professionals relating to oral medicine use in swallowing-impaired patients: a scoping review.

PubMed

Masilamoney, Mehrusha; Dowse, Ros

2018-06-01

Swallowing impairment is a growing problem that affects 16% of the overall population and can significantly affect medicine-taking. However, little is known about the knowledge and practice of healthcare professionals (HCPs) relating to swallowing-impaired (SI) patients. The aim of this scoping review was to investigate the knowledge and practice of HCPs in supporting SI patients with their medicine-taking, to identify their reference sources, and to describe their training and information needs. Databases searched included Scopus, Web of Science, Medline and Google Scholar from inception to August 2017. Qualitative and quantitative studies describing knowledge and practice of HCPs relating to medicine use in SI patients were included. The nine included studies, from an initial 142, involved nurses (nine studies), pharmacists (one study) and doctors (two studies) in hospitals or aged-care facilities. A knowledge deficit linked to lack of training was revealed, particularly with identification of modified-release dosage forms, medication that can/cannot be crushed, vehicle for safe dispersion, consequences of inappropriate modification, drug stability and legal aspects. Written information sources were named, but not used in practice. Pharmacists were the primary experts for consultation, and were involved in nurse education, and were members of multidisciplinary teams. Knowledge in nurses was inadequate, with practice indicating potentially serious medication-related errors. Additional training, either undergraduate or as continuing professional development, is recommended. Information to guide safe medicine modification practice should be accessible to all practitioners. Pharmacists could take the lead role in offering training to nurses. © 2018 Royal Pharmaceutical Society.

Influence of Minor Alloying Elements on Selective Oxidation and Reactive Wetting of CMnSi TRIP Steel during Hot Dip Galvanizing

NASA Astrophysics Data System (ADS)

Cho, Lawrence; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

2014-09-01

The influence of the addition of minor alloying elements on the selective oxidation and the reactive wetting of CMnSi transformation-induced plasticity (TRIP) steels was studied by means of galvanizing simulator tests. Five TRIP steels containing small alloying additions of Cr, Ni, Ti, Cu, and Sn were investigated. After intercritical annealing (IA) at 1093 K (820 °C) in a N2 + 5 pct H2 gas atmosphere with a dew point of 213 K (-60 °C), two types of oxides were formed on the strip surface: Mn-rich xMnO·SiO2 ( x > 1.5) and Si-rich xMnO·SiO2 ( x < 0.3) oxides. The addition of the minor alloying elements changed the morphology of the Si-rich oxides from a continuous film to discrete islands and this improved the wettability by molten Zn. The improved wetting effect of the minor alloying elements was attributed to an increased area fraction of the surface where the oxides were thinner, enabling a direct unhindered reaction between Fe and the Al in the liquid Zn and the formation of the inhibition layer during the hot dip galvanizing. The addition of a small amount of Sn is shown to significantly decrease the density of Zn-coating defects on CMnSi TRIP steels.

Effect of Carbon in Fabrication Al-SiC Nanocomposites for Tribological Application

PubMed Central

Hekner, Bartosz; Myalski, Jerzy; Pawlik, Tomasz; Sopicka-Lizer, Małgorzata

2017-01-01

Aluminium-based hybrid composites are a new class of advanced materials with the potential of satisfying the demands in engineering applications. This paper describes the effects of carbon addition on the formation and properties of AMC with SiC nanoparticles reinforcement. The composites were produced via mechanical alloying followed by hot pressing. Three forms of carbon, graphite (GR), multiwalled carbon nanotubes (CNTs), and, for the first time, glassy carbon (GC), were used for the hybrid composites manufacturing and compared with tribological properties of Al-SiC composite without carbon addition. GC and CNTs enhanced formation of Al-SiC composite particles and resulted in a homogeneous distribution of reinforcing particles. On the other hand, GR addition altered mechanochemical alloying and did not lead to a proper distribution of nanoparticulate SiC reinforcement. Hot pressing technique led to the reaction between Al and carbon as well as SiC particles and caused the formation of Al4C3 and γ-Al2O3. The subsistence of carbon particles in the composites altered the predominant wear mechanisms since the wear reduction and the stabilization of the friction coefficient were observed. GC with simultaneous γ-Al2O3 formation in the hybrid Al-SiC(n)-C composites turned out to be the most effective additive in terms of their tribological behaviour. PMID:28773039

Decreasing biotoxicity of fume particles produced in welding process.

PubMed

Yu, Kuei-Min; Topham, Nathan; Wang, Jun; Kalivoda, Mark; Tseng, Yiider; Wu, Chang-Yu; Lee, Wen-Jhy; Cho, Kuk

2011-01-30

Welding fumes contain heavy metals, such as chromium, manganese, and nickel, which cause respiratory diseases and cancer. In this study, a SiO(2) precursor was evaluated as an additive to the shielding gas in an arc welding process to reduce the biotoxicity caused by welding fume particles. Transmission electron micrographic images show that SiO(2) coats on the surface of welding fume particles and promotes particle agglomeration. Energy dispersive X-ray spectroscopy further shows that the relative amount of silicon in these SiO(2)-coated agglomerates is higher than in baseline agglomerates. In addition, Escherichia coli (E. coli) exposed to different concentrations of pure SiO(2) particles generated from the arc welding process exhibits similar responses, suggesting that SiO(2) does not contribute to welding fume particle toxicity. The trend of E. coli growth in different concentrations of baseline welding fume particle shows the most significant inhibition occurs in higher exposure concentrations. The 50% lethal logarithmic concentrations for E. coli in arc welding particles of baseline, 2%, and 4.2% SiO(2) precursor additives were 823, 1605, and 1800 mg/L, respectively. Taken together, these results suggest that using SiO(2) precursors as an additive to arc welding shielding gas can effectively reduce the biotoxicity of welding fume. Copyright © 2010 Elsevier B.V. All rights reserved.

Synthesis of K2SiF6:Mn4+ phosphor for LED lamp

NASA Astrophysics Data System (ADS)

Takarkhede, M. G.; Patil, R. R.; Moharil, S. V.; Joshi, C. P.; Talewar, Rupesh

2018-05-01

Now a days red emitting Mn4+ activated dialkali fluorosilicate phosphors have found applications in solid state lighting and displays. In this paper we describe development of K2SiF6 phosphor doped with Mn synthesized by simple method using Si metal powder with addition of oxidizing agent KMnO4. The photoluminescence spectra of K2SiF6:Mn show that emission is in the red region. In addition to this we studied LED spectra by coating the LED with phosphor mixed in different proportions with epoxy.

Concentration gradient induced morphology evolution of silica nanostructure growth on photoresist-derived carbon micropatterns

NASA Astrophysics Data System (ADS)

Liu, Dan; Shi, Tielin; Xi, Shuang; Lai, Wuxing; Liu, Shiyuan; Li, Xiaoping; Tang, Zirong

2012-09-01

The evolution of silica nanostructure morphology induced by local Si vapor source concentration gradient has been investigated by a smart design of experiments. Silica nanostructure or their assemblies with different morphologies are obtained on photoresist-derived three-dimensional carbon microelectrode array. At a temperature of 1,000°C, rope-, feather-, and octopus-like nanowire assemblies can be obtained along with the Si vapor source concentration gradient flow. While at 950°C, stringlike assemblies, bamboo-like nanostructures with large joints, and hollow structures with smaller sizes can be obtained along with the Si vapor source concentration gradient flow. Both vapor-liquid-solid and vapor-quasiliquid-solid growth mechanisms have been applied to explain the diverse morphologies involving branching, connecting, and batch growth behaviors. The present approach offers a potential method for precise design and controlled synthesis of nanostructures with different features.

Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy.

PubMed

Hermann, Peter; Hoehl, Arne; Ulrich, Georg; Fleischmann, Claudia; Hermelink, Antje; Kästner, Bernd; Patoka, Piotr; Hornemann, Andrea; Beckhoff, Burkhard; Rühl, Eckart; Ulm, Gerhard

2014-07-28

We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of near-field spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2.

Role of bismuth on solidification, microstructure and mechanical properties of a near eutectic Al-Si alloys

NASA Astrophysics Data System (ADS)

Farahany, Saeed; Ourdjini, Ali; Bakar, Tuty Asma Abu; Idris, Mohd Hasbullah

2014-09-01

Computer aided thermal analysis and microstructural observation showed that addition of bismuth (Bi) within the range of 0.25 and 2 wt% produced a greater effect on the Al-Si eutectic phase than on primary aluminium and Al2Cu phases. Results showed that with addition of 1 wt% Bi the eutectic silicon structure was refined from flake-like morphology into lamellar. Bi refines rather than modifies the Si structure and increases the Al-Si eutectic fraction solid and more significantly there was no fading even up to 180 min of melt holding. Transmission electron microscopy study showed that the Si twin spacing decreased from 160 to 75 nm which is likely attributed to the refining effect of Bi. It was also found that addition of 1 wt% Bi increased the tensile strength, elongation and the absorbed energy for fracture due to the refined eutectic silicon structure.

Effect of Copper on Corrosion of Forged AlSi1MgMn Automotive Suspension Components

NASA Astrophysics Data System (ADS)

Koktas, Serhan; Gokcil, Emre; Akdi, Seracettin; Birol, Yucel

2017-09-01

Recently, modifications in the alloy composition and the manufacturing process cycle were proposed to achieve a more uniform structure with no evidence of coarse grains across the section of the AlSi1MgMn alloys. Cu was added to the AlSi1MgMn alloy to improve its age hardening capacity without a separate solution heat treatment. However, Cu addition degrades the corrosion resistance of this alloy due to the formation of Al-Cu precipitates along the grain boundaries that are cathodic with respect to the aluminum matrix and thus encourage intergranular corrosion. The present work was undertaken to identify the impact of Cu addition on the corrosion properties of AlSi1MgMn alloys with different Cu contents. A series of AlSi1MgMn alloys with 0.06-0.89 wt.% Cu were tested in order to identify an optimum level of Cu addition.

MoSi2-Base Composites

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G.

2003-01-01

Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

Retraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhiheng; Feldman, Leonard C; Tolk, Norman H.

IN OUR 2006 REPORT, DESORPTION OF H FROM SI(111) BY RESONANT EXCITATION OF THE Si-H vibrational stretch mode (1), we reported resonant photodesorption of hydrogen from a Si(111) surface using tunable infrared radiation that corresponded to the Si-H vibrational stretch mode. Our recent attempts to reproduce these experiments have been unsuccessful, and the free electron laser facility at Vanderbilt, a unique light source for this experiment, has shut down, prohibiting further research. Because our conclusions are now in question, we retract the Report.

Multi-Kilovolt Solid-State Picosecond Switch Studies

DTIC Science & Technology

2013-06-01

waveforms for the SiC device. Figure 7 shows the nanosecond driving pulse and the delayed avalanche breakdown of the SiC device. The driving...of the sharpened pulse RS VS VOLTAGE SOURCE TEST DEVICE VOLTAGE MONITOR R1 R2 TO SCOPE Figure 6. Simplified SiC avalanche diode test setup 0 2 4...Measured waveforms showing nanosecond driving pulse and subnanosecond delayed avalanche dreakdown of SiC device 50 µm 75 µm 10 µm p+ n+n Anode Cathode

Improving the properties of geopolymer containing oil-contaminated clay, metakaolin, and blast furnace slag by applying nano-SiO2.

PubMed

Luo, Huan-Lin; Lin, Deng-Fong; Chen, Shih-Chieh

2017-07-01

In this study, geopolymer specimens based on calcined oil-contaminated clays (OCCs), metakaolin replacements of OCCs, and blast furnace slag were manufactured by the addition of nano-SiO 2 to improve their properties. The effects of adding 0, 1, 2, or 3% nano-SiO 2 on the properties and microstructures of the geopolymer specimens were determined using compressive strength tests, flow tests, setting time tests, scanning electron microscopy (SEM), and silicon nuclear magnetic resonance spectroscopy (Si-NMR). The results showed that the setting time and flowability of the geopolymer specimens decreased and the compressive strength increased as the amount of nano-SiO 2 increased. These results were supported by the SEM and Si-NMR assays. This study suggests that the addition of nano-SiO 2 was beneficial and improved the properties of the geopolymer specimens containing calcined OCC.

Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.;

Improving High-Temperature Tensile and Low-Cycle Fatigue Behavior of Al-Si-Cu-Mg Alloys Through Micro-additions of Ti, V, and Zr

NASA Astrophysics Data System (ADS)

Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

2015-07-01

High-temperature tensile and low-cycle fatigue tests were performed to assess the influence of micro-additions of Ti, V, and Zr on the improvement of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in the as-cast condition. Addition of transition metals led to modification of microstructure where in addition to conventional phases present in the Al-7Si-1Cu-0.5Mg base, new thermally stable micro-sized Zr-Ti-V-rich phases Al21.4Si4.1Ti3.5VZr3.9, Al6.7Si1.2TiZr1.8, Al2.8Si3.8V1.6Zr, and Al5.1Si35.4Ti1.6Zr5.7Fe were formed. The tensile tests showed that with increasing test temperature from 298 K to 673 K (25 °C to 400 °C), the yield stress and tensile strength of the present studied alloy decreased from 161 to 84 MPa and from 261 to 102 MPa, respectively. Also, the studied alloy exhibited 18, 12, and 5 pct higher tensile strength than the alloy A356, 354 and existing Al-Si-Cu-Mg alloy modified with additions of Zr, Ti, and Ni, respectively. The fatigue life of the studied alloy was substantially longer than those of the reference alloys A356 and the same Al-7Si-1Cu-0.5Mg base with minor additions of V, Zr, and Ti in the T6 condition. Fractographic analysis after tensile tests revealed that at the lower temperature up to 473 K (200 °C), the cleavage-type brittle fracture for the precipitates and ductile fracture for the matrix were dominant while at higher temperature fully ductile-type fracture with debonding and pull-out of cracked particles was identified. It is believed that the intermetallic precipitates containing Zr, Ti, and V improve the alloy performance at increased temperatures.

The effects of different types of nano-silicon dioxide additives on the properties of sludge ash mortar.

PubMed

Luo, Huan-Lin; Chang, Wei-Che; Lin, Deng-Fong

2009-04-01

To improve the drawbacks caused by the sludge ash replacement in mortar, the previous studies have shown that the early strength and durability of sludge ash/cement mortar are improved by adding nano-silicon dioxide (nano-SiO2) to mortar. In this article, three types of nano-SiO2--SS, HS, and SP (manufacturer code names)--were applied to sludge ash/cement mixture to make paste or mortar specimens. The object is to further extend the recycle of the sludge ash by determining the better type of nano-SiO2 additive to improve properties of sludge ash/ cement paste or mortar. The cement was replaced by 0, 10, 20, and 30% of sludge ash, and 0 and 2% of nano-SiO2 additives were added to the sludge ash paste or mortar specimens. Tests such as setting time, compressive strength, scanning electron microscopy, X-ray diffraction, nuclear magnetic resonance, and thermogravimetric analysis/differential thermal analysis were performed in this study. Test results show that nano-SiO2 additives can not only effectively increase the hydration product (calcium silicate hydrate [C-S-H] gel), but also make the crystal structure denser. Among the three types of nano-SiO2 additive, the SS type can best improve the properties of sludge ash/cement paste or mortar, followed by the SP and HS types.

Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites. M.S. Thesis Final Technical Report

NASA Technical Reports Server (NTRS)

Axelson, Scott R.

1988-01-01

Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

Influence of Si addition on the carbon partitioning process in martensitic-austenitic stainless steels

NASA Astrophysics Data System (ADS)

Huang, Q.; Volkova, O.; De Cooman, BC; Biermann, H.; Mola, J.

2018-06-01

The effect of Si on the efficiency of carbon partitioning during quenching and partitioning (Q&P) processing of stainless steels was studied. For this purpose, 2 mass-% Si was added to a Fe-13Cr-0.47C reference steel. The Si-free (reference) and Si-added steels were subjected to Q&P cycles in dilatometer. The carbon enrichment of austenite in both steels was evaluated by determining the temperature interval between the quench temperature and the martensite start temperature of secondary martensite formed during final cooling to room temperature. In Q&P cycles with comparable martensite fractions at the quench temperature, the carbon enrichment of austenite after partitioning was similar for both steels. To compare the mechanical stability of austenite, Q&P-processed specimens of both steels were tensile tested in the temperature range 20-200 °C. The quench and partitioning temperatures were room temperature and 450 °C, respectively. Si addition had no meaningful influence on mechanical stability of austenite. The results indicate that the suppression of cementite formation by Si addition to stainless steels, as confirmed by transmission electron microscopy examinations, has no noticeable influence on the carbon enrichment of austenite in the partitioning step.

Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

PubMed

Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

2009-10-28

The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

NASA Astrophysics Data System (ADS)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-10-01

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1. Electronic supplementary information (ESI) available: Raman spectroscopy characterization of the SiHfCN-based ceramics. See DOI: 10.1039/c4nr03376k

Effect of Al-TiB Addition on the Mechanical Properties and Microstructure of Al-ADC12/NanoSiC Produced by Stir Casting Methods

NASA Astrophysics Data System (ADS)

Dhaneswara, D.; Zulfia, A.; Pramudita, T. P.; Ferdian, D.; Utomo, B. W.

2018-03-01

Addition of Ti-B grain refiner in Al-ADC12/nanoSiC composite results in improvement of tensile strength, hardness, and wear resistance through grain refinement. In this research, composite of Al-ADC12/nano SiC (0.15 %vf) with variations of TiB respectively (0.0), (0.02), (0.04), (0.06), dan (0.08) wt% were produced by stir casting. 10% of Mg were added to promote wettability between reinforce and matrix. It was found the best addition of TiB is 0.04 wt% Ti-B which results 135,9 MPa in tensile strength, 46 HRB in hardness, and 1.47x10-5 mm3/s as wear rate. The increase in mechanical properties of composites mainly because of Al3Ti acts as nucleants which initiates the grain refinement and the existence of MgAl2O4 phase indicates an interphase between nano SiC and ADC12 matrix. However, the increase of Ti-B addition after optimum number gives no significant results. High composition of iron and magnesium addition will form intermetallic phase β-Fe, π-Fe, and Mg2Si.

NASA Astrophysics Data System (ADS)

2018-05-01

The main reactions considered in OM mineralization during early diagenesis of sediment are listed in Table 1. Under oxidant-depleted conditions, fermentation of metabolizable OM of general formula CxHyOz can yield acetate, CO2 and H2 (r1). Note that reaction r1 takes into account any source of CO2 during fermentation including the partial degradation of high molecular weight OM (HMW OM) into lower molecular weight OM (LMW OM; Corbett et al., 2013; Corbett et al., 2015). The products of this reaction yield CH4 via either acetate fermentation (r2) or hydrogenotrophy (r3). In addition, when electron acceptors (EAs), i.e., Fe(III), SO42-, and partially oxidized HS, are present, CH4 (r4) and OM (r5) can be oxidized to produce CO2. Here, nitrate and Mn oxyhydroxides were not considered as oxidants, owing to the very low concentration of the former (<2 μmol L-1) over the whole sampling interval and because Mn oxyhydroxides do not form under the slightly acidic conditions prevailing in these porewaters (Chappaz et al., 2008). In addition, we neglected precipitation and dissolution of carbonate minerals except for siderite precipitation (r6) due to its positive SI values (SI ≥ 0.5).

Effect of Nano-Si3N4 Additives and Plasma Treatment on the Dry Sliding Wear Behavior of Plasma Sprayed Al2O3-8YSZ Ceramic Coatings

NASA Astrophysics Data System (ADS)

Gou, Junfeng; Zhang, Jian; Zhang, Qiwen; Wang, You; Wang, Chaohui

2017-04-01

In this paper, the effect of nano-Si3N4 additives and plasma treatment on the wear behavior of Al2O3-8YSZ ceramic coatings was studied. Nano-Al2O3, nano-8YSZ (8 wt.% Y2O3-stabilized ZrO2) and nano-Si3N4 powders were used as raw materials to fabricate four types of sprayable feedstocks. Plasma treatment was used to improve the properties of the feedstocks. The surface morphologies of the ceramic coatings were observed. The mechanical properties of the ceramic coatings were measured. The dry sliding wear behavior of the Al2O3-8YSZ coatings with and without Si3N4 additives was studied. Nano-Si3N4 additives and plasma treatment can improve the morphologies of the coatings by prohibiting the initiation of micro-cracks and reducing the unmelted particles. The hardness and bonding strength of AZSP (Al2O3-18 wt.% 8YSZ-10 wt.% Si3N4-plasma treatment) coating increased by 79.2 and 44% compared to those of AZ (Al2O3-20 wt.% 8YSZ) coating. The porosity of AZSP coating decreased by 85.4% compared to that of AZ coating. The wear test results showed that the addition of nano-Si3N4 and plasma treatment could improve the wear resistance of Al2O3-8YSZ coatings.

Silicon and Nitrate Differentially Modulate the Symbiotic Performances of Healthy and Virus-Infected Bradyrhizobium-nodulated Cowpea (Vigna unguiculata), Yardlong Bean (V. unguiculata subsp. sesquipedalis) and Mung Bean (V. radiata).

PubMed

Izaguirre-Mayoral, Maria Luisa; Brito, Miriam; Baral, Bikash; Garrido, Mario José

2017-09-15

The effects of 2 mM silicon (Si) and 10 mM KNO₃ (N)-prime signals for plant resistance to pathogens-were analyzed in healthy and Cowpea chlorotic mottle virus (CCMV) or Cowpea mild mottle virus (CMMV)-infected Bradyrhizobium -nodulated cowpea, yardlong bean and mung bean plants. In healthy plants of the three Vigna taxa, nodulation and growth were promoted in the order of Si + N > N > Si > controls. In the case of healthy cowpea and yardlong bean, the addition of Si and N decreased ureide and α-amino acids (AA) contents in the nodules and leaves in the order of Si + N> N > Si > controls. On the other hand, the addition of N arrested the deleterious effects of CCMV or CMMV infections on growth and nodulation in the three Vigna taxa. However, the addition of Si or Si + N hindered growth and nodulation in the CCMV- or CMMV-infected cowpea and yardlong bean, causing a massive accumulation of ureides in the leaves and nodules. Nevertheless, the AA content in leaves and nodules of CCMV- or CMMV-infected cowpea and yardlong bean was promoted by Si but reduced to minimum by Si + N. These results contrasted to the counteracting effects of Si or Si + N in the CCMV- and CMMV-infected mung bean via enhanced growth, nodulation and levels of ureide and AA in the leaves and nodules. Together, these observations suggest the fertilization with Si + N exclusively in virus-free cowpea and yardlong bean crops. However, Si + N fertilization must be encouraged in virus-endangered mung bean crops to enhance growth, nodulation and N-metabolism. It is noteworthy to see the enhanced nodulation of the three Vigna taxa in the presence of 10 mM KNO₃.

Silicon and Nitrate Differentially Modulate the Symbiotic Performances of Healthy and Virus-Infected Bradyrhizobium-nodulated Cowpea (Vigna unguiculata), Yardlong Bean (V. unguiculata subsp. sesquipedalis) and Mung Bean (V. radiata)

PubMed Central

Izaguirre-Mayoral, Maria Luisa; Brito, Miriam; Garrido, Mario José

2017-01-01

The effects of 2 mM silicon (Si) and 10 mM KNO3 (N)—prime signals for plant resistance to pathogens—were analyzed in healthy and Cowpea chlorotic mottle virus (CCMV) or Cowpea mild mottle virus (CMMV)-infected Bradyrhizobium-nodulated cowpea, yardlong bean and mung bean plants. In healthy plants of the three Vigna taxa, nodulation and growth were promoted in the order of Si + N > N > Si > controls. In the case of healthy cowpea and yardlong bean, the addition of Si and N decreased ureide and α-amino acids (AA) contents in the nodules and leaves in the order of Si + N> N > Si > controls. On the other hand, the addition of N arrested the deleterious effects of CCMV or CMMV infections on growth and nodulation in the three Vigna taxa. However, the addition of Si or Si + N hindered growth and nodulation in the CCMV- or CMMV-infected cowpea and yardlong bean, causing a massive accumulation of ureides in the leaves and nodules. Nevertheless, the AA content in leaves and nodules of CCMV- or CMMV-infected cowpea and yardlong bean was promoted by Si but reduced to minimum by Si + N. These results contrasted to the counteracting effects of Si or Si + N in the CCMV- and CMMV-infected mung bean via enhanced growth, nodulation and levels of ureide and AA in the leaves and nodules. Together, these observations suggest the fertilization with Si + N exclusively in virus-free cowpea and yardlong bean crops. However, Si + N fertilization must be encouraged in virus-endangered mung bean crops to enhance growth, nodulation and N-metabolism. It is noteworthy to see the enhanced nodulation of the three Vigna taxa in the presence of 10 mM KNO3. PMID:28914770

Multiple Aromaticity and Antiaromaticity in Silicon Clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, Hua JIN.; Kuznetsov, A E.; Boldyrev, Alexander I.

A series of silicon clusters containing four atoms but with different charge states (Si{sub 4}{sup 2+}, Si{sub 4}, Si{sub 4}{sup 2-}, and NaSi{sub 4}{sup -}) were studied by photoelectron spectroscopy and ab initio calculations. Structure evolution and chemical bonding in this series were interpreted in terms of aromaticity and antiaromaticity, which allowed the prediction of how structures of the four-atom silicon clusters change upon addition or removal of two electrons. It is shown that Si{sub 4}{sup 2+} is square-planar, analogous to the recently discovered aromatic Al{sub 4}{sup 2-} cluster. Upon addition of two electrons, neutral Si{sub 4} becomes {sigma}-antiaromatic andmore » exhibits a rhombus distortion. Adding two more electrons to Si{sub 4} leads to two energetically close structures of Si{sub 4}{sup 2-}: either a double antiaromatic parallelogram structure or an aromatic system with a butterfly distortion. Because of the electronic instability of doubly charged Si{sub 4}{sup 2-}, a stabilizing cation (Na{sup +}) was used to produce Si{sub 4}{sup 2-} in the gas phase in the form of Na{sup +}[Si{sub 4}{sup 2-}], which was characterized experimentally by photoelectron spectroscopy. Multiple antiaromaticity in the parallelogram Na{sup +}[Si{sub 4}{sup 2-}] species is highly unusual.« less

Oxidation of ZrB2-and HfB2-Based Ultra-High Temperature Ceramics: Effects of Ta Additions

NASA Technical Reports Server (NTRS)

Opila, Elizabeth; Levine, Stanley; Lorinez, Jonathan

2003-01-01

Several compositions of ZrB2- and HfB2-based Ultra-High Temperature Ceramics (UHTC) were oxidized in stagnant air at 1627 C in ten minute cycles for times up to 100 minutes. These compositions include: ZrB2 - 20v% SiC, HfB2 - 20v% SiC, ZrB2 - 20v% SiC - 20v% TaSi2, ZrB2 - 33v% SiC, HfB2 - 20v% SiC - 20v% TaSi2, and ZrB2 - 20v% SiC - 20v% TaC. The weight change due to oxidation was recorded. The ZrB2 - 20v% SiC - 20v% TaSi2 composition was also oxidized in stagnant air at 1927 C and in an arc jet atmosphere. Samples were analyzed after oxidation by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive spectroscopy to determine the reaction products and to observe the microstructure. The ZrB2 - 20v% SiC - 20v% TaSi2 showed the lowest oxidation rate at 1627 C, but performed poorly under the more extreme tests due to liquid phase formation. Effects of Ta-additions on the oxidation of the diboride-based UHTC are discussed.

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

NASA Astrophysics Data System (ADS)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

High Temperature Oxidation Studies on Alloys Containing Dispersed Phase Particles and Clarification of the Mechanism of Growth of SiO2.

DTIC Science & Technology

1986-08-28

beneath the Cr 0 layer. ’ 2~ 2 3 Nickel and cobalt based alloys were also tested with additions of Si N. . IN 3 4 particles and were found to behave in a...additions of Si ION, a high temperature compound found in the P*~~ 4 f°.-0 Si"Ali-O-N system, to cobalt - chromium alloys4 The particular SiAlON used in...a chromium spinel appeared as a product aLong with CrO0 Fe0. and Fe0 . At higher chromium concentrations Fe 0 was eliminat das a- detectable product

System identification through nonstationary data using Time-Frequency Blind Source Separation

NASA Astrophysics Data System (ADS)

Guo, Yanlin; Kareem, Ahsan

2016-06-01

Classical output-only system identification (SI) methods are based on the assumption of stationarity of the system response. However, measured response of buildings and bridges is usually non-stationary due to strong winds (e.g. typhoon, and thunder storm etc.), earthquakes and time-varying vehicle motions. Accordingly, the response data may have time-varying frequency contents and/or overlapping of modal frequencies due to non-stationary colored excitation. This renders traditional methods problematic for modal separation and identification. To address these challenges, a new SI technique based on Time-Frequency Blind Source Separation (TFBSS) is proposed. By selectively utilizing "effective" information in local regions of the time-frequency plane, where only one mode contributes to energy, the proposed technique can successfully identify mode shapes and recover modal responses from the non-stationary response where the traditional SI methods often encounter difficulties. This technique can also handle response with closely spaced modes which is a well-known challenge for the identification of large-scale structures. Based on the separated modal responses, frequency and damping can be easily identified using SI methods based on a single degree of freedom (SDOF) system. In addition to the exclusive advantage of handling non-stationary data and closely spaced modes, the proposed technique also benefits from the absence of the end effects and low sensitivity to noise in modal separation. The efficacy of the proposed technique is demonstrated using several simulation based studies, and compared to the popular Second-Order Blind Identification (SOBI) scheme. It is also noted that even some non-stationary response data can be analyzed by the stationary method SOBI. This paper also delineates non-stationary cases where SOBI and the proposed scheme perform comparably and highlights cases where the proposed approach is more advantageous. Finally, the performance of the proposed method is evaluated using a full-scale non-stationary response of a tall building during an earthquake and found it to perform satisfactorily.

Synthesis and characterization of LTA nanozeolite using barley husk silica: Mercury removal from standard and real solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azizi, Seyed Naser, E-mail: azizi@umz.ac.ir; Dehnavi, Ahmad Roozbehani, E-mail: Roozbehanisulfur@yahoo.com; Joorabdoozha, Amir

2013-05-15

Highlights: ► Silica extraction from barley husk with high purity for the synthesis of A nanozeolite. ► Free template A nanozeolite synthesized via new source of silica at low temperature. ► Optimization of SiO{sub 2}/Al{sub 2}O{sub 3}, Na{sub 2}O/SiO{sub 2} ratios, temperature and time of the synthesis. ► Utilizing of synthesized A nanozeolite for mercury removal from aqueous solutions. ► Mercury removal at optimized pH, contact time and adsorbent dose from real solution. - Abstract: In this study, synthesized Lined Type A (LTA) nanozeolite from barley husk silica (BHS) was used for mercury removal from standard and real aqueous solutions.more » The BHS in amorphous phase with 80% purity was extracted from barley husk ash (BHA), and used effectively as a new source of silica for the synthesis of NaA nanozeolite. The NaA nanocrystal in pure phase has been synthesized at low temperature, without adding any organic additives. The effects of heating time, reaction temperature, SiO{sub 2}/Al{sub 2}O{sub 3}, and Na{sub 2}O/SiO{sub 2} mole ratios on the crystallization of NaA nanozeolite were studied. The adsorption capacity of mercury (II) was studied as a function of pH, contact time, and amount of adsorbent. The crystallization of NaA nanozeolite from BHS was characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), Brunauer–Emmett–Teller (BET), and FTIR techniques. Moreover, concentration of Hg{sup 2+} ions in the aqueous solutions was analyzed by hydride generation atomic absorption spectroscopy method (HG-AAS). The standard and real samples analysis showed that NaA nanozeolite is capable of Hg{sup 2+} ions removal from the aqueous solutions. Efficiency of mercury (II) adsorption from real solutions onto the nano-sized NaA zeolite was 98%.« less

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

PubMed

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

ALMA Observations of the Galactic Center: SiO Outflows and High Mass Star Formation Near Sgr A

NASA Technical Reports Server (NTRS)

Yusef-Zadeh, F.; Royster, M.; Wardle, M.; Arendt, R.; Bushouse, H.; Gillessen, S.; Lis, D.; Pound, M. W.; Roberts, D. A.; Whitney, B.;

Challenge of Si/SiGe technology to optoelectronics

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Jung, J. G.

1993-01-01

Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations. Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.) Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced. Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.

Mechanical properties of {beta}-SiC pressureless sintered with Al{sub 2}O{sub 3} additions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mulla, M.A.; Krstic, V.D.

1994-01-01

Mechanical properties of pressureless sintered SiC with Al{sub 2}O{sub 3}addition were measured. The increase in fracture toughness and strength is attributed to the presence of a liquid phase which results in the formation of platelets of an {alpha}-SiC. The highest values for flexural strength and toughness were measured on samples with {approximately}10%Al{sub 2}O{sub 3} addition. Pull out, crack bridging and crack deflection are identified as the major strengthening and toughening mechanisms.

Elements and inorganic ions as source tracers in recent Greenland snow

NASA Astrophysics Data System (ADS)

Lai, Alexandra M.; Shafer, Martin M.; Dibb, Jack E.; Polashenski, Chris M.; Schauer, James J.

2017-09-01

Atmospheric transport of aerosols leads to deposition of impurities in snow, even in areas of the Arctic as remote as Greenland. Major ions (e.g. Na+, Ca2+, NH4+, K+, SO42-) are frequently used as tracers for common aerosol sources (e.g. sea spray, dust, biomass burning, anthropogenic emissions). Trace element data can supplement tracer ion data by providing additional information about sources. Although many studies have considered either trace elements or major ions, few have reported both. This study determined total and water-soluble concentrations of 31 elements (Al, As, Ca, Cd, Ce, Co, Cr, Dy, Eu, Fe, Gd, K, La, Mg, Mn, Na, Nb, Nd, Pb, Pr, S, Sb, Si, Sm, Sn, Sr, Ti, V, U, Y, Zn) in shallow snow pits at 22 sampling sites in Greenland, along a transect from Summit Station to sites in the northwest. Black carbon (BC) and inorganic ions were measured in colocated samples. Sodium, which is typically used as a tracer of sea spray, did not appear to have any non-marine sources. The rare earth elements, alkaline earth elements (Mg, Ca, Sr), and other crustal elements (Fe, Si, Ti, V) were not enriched above crustal abundances relative to Al, indicating that these elements are primarily dust sourced. Calculated ratios of non-sea salt Ca (nssCa) to estimated dust mass affirm the use of nssCa as a dust tracer, but suggest up to 50% uncertainty in that estimate in the absence of other crustal element data. Crustal enrichment factors indicated that As, Cd, Pb, non-sea-salt S, Sb, Sn, and Zn were enriched in these samples, likely by anthropogenic sources. Principal component analysis indicated more than one crustal factor, and a variety of factors related to anthropogenically enriched elements. Analysis of trace elements alongside major tracer ions does not change interpretation of ion-based source attribution for sources that are well-characterized by ions, but is valuable for assessing uncertainty in source attribution and identifying sources not represented by major ions.

Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshimura, Satoru, E-mail: yosimura@ppl.eng.osaka-u.ac.jp; Sugimoto, Satoshi; Kiuchi, Masato

2016-03-14

We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as a gas source. In this study, one of the fragment ions produced from HMD, SiCH{sub 4}{sup +}, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH{sub 4}{sup +} ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800 °C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated themore » occurrence of 3C-SiC deposition.« less

Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN

NASA Astrophysics Data System (ADS)

Lee, Dong-gun; Wakamatsu, Ryuta; Koizumi, Atsushi; Terai, Yoshikazu; Fujiwara, Yasufumi

2013-08-01

The effects of Mg and Si codoping on Eu luminescence properties have been investigated in Eu-doped GaN (GaN:Eu). The Mg codoping into GaN:Eu produced novel luminescence centers consisting of Eu and Mg, and increased photoluminescence (PL) intensity in Eu,Mg-codoped GaN (GaN:Eu,Mg). However, this increased PL intensity was quenched by thermal annealing in N2 ambient, which is due to activation of Mg acceptors. In GaN:Eu,Mg codoped additionally with Si (GaN:Eu,Mg,Si), on the other hand, the Eu-Mg centers disappeared, while an additional luminescence center appeared. Furthermore, the additional luminescence center showed no quenching under N2 annealing because Si donors compensated for the Mg acceptors in GaN. Thermal quenching of the luminescence center was also approximately half of that in GaN:Eu. These results indicate that the codoping with additional impurities in GaN:Eu is a powerful technique to control Eu luminescence centers for realization of improved device performance in red light-emitting diodes using GaN:Eu.

Synthesis and electrochemical performance of mesoporous SiO{sub 2}–carbon nanofibers composite as anode materials for lithium secondary batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hyun, Yura; Choi, Jin-Yeong; Park, Heai-Ku

Highlights: • Mesoporous SiO{sub 2}–carbon nanofibers composite synthesized on Ni foam without any binder. • This composite was directly applied as anode material of Li secondary batteries. • Showed the highest initial (2420 mAh/g) and discharging (2092 mAh/g) capacity. • This material achieved a retention rate of 86.4% after 30 cycles. - Abstract: In this study, carbon nanofibers (CNFs) and mesoporous SiO{sub 2}–carbon nanofibers composite were synthesized and applied as the anode materials in lithium secondary batteries. CNFs and mesoporous SiO{sub 2}–CNFs composite were grown via chemical vapor deposition method with iron-copper catalysts. Mesoporous SiO{sub 2} materials were prepared bymore » sol–gel method using tetraethylorthosilicate as the silica source and cetyltrimethylammoniumchloride as the template. Ethylene was used as the carbon source and passes into a quartz reactor of a tube furnace heated to 600 °C, and the temperature was maintained at 600 °C for 10 min to synthesize CNFs and mesoporous SiO{sub 2}–CNFs composite. The electrochemical characteristics of the as-prepared CNFs and mesoporous SiO{sub 2}–CNFs composite as the anode of lithium secondary batteries were investigated using a three-electrode cell. In particular, the mesoporous SiO{sub 2}–CNFs composites synthesized without binder after depositing mesoporous SiO{sub 2} on Ni foam showed the highest charging and discharging capacity and retention rate. The initial capacity (2420 mAh/g) of mesoporous SiO{sub 2}–CNFs composites decreased to 2092 mAh/g after 30 cycles at a retention rate of 86.4%.« less

Hydrous orthopyroxene-rich pyroxenite source of the Xinkailing high magnesium andesites, Western Liaoning: Implications for the subduction-modified lithospheric mantle and the destruction mechanism of the North China Craton

NASA Astrophysics Data System (ADS)

Hong, Lu-Bing; Zhang, Yin-Hui; Xu, Yi-Gang; Ren, Zhong-Yuan; Yan, Wen; Ma, Qiang; Ma, Liang; Xie, Wei

2017-06-01

Metasomatism of the lithospheric mantle by subduction-related fluids/melts is recorded in the Early Cretaceous Xinkailing high magnesium andesites (HMAs) from Western Liaoning. Olivine-hosted melt inclusions within the Xinkailing HMAs are alkaline and record a much lower SiO2 content and higher Al2O3 and CaO contents than the sub-alkaline bulk rock compositions. These observed compositional differences between bulk rocks and melt inclusions suggest that a crustally derived, high-SiO2 melt was incorporated in the Xinkailing HMAs within the pre-eruptive magma chamber. The process of this incorporation accounts for the compositional differences between upper (HMAs) and lower (high magnesium basalts) successions of the Yixian Formation. Olivine phenocrysts also record unusually high Ni and Ni/MgO contents with high Fo values. Based on the fact that bulk rocks record low Ni contents, whereas olivine crystals record a steep correlation between Fo and Ni and low CaO and CaO/FeO contents, in addition to the likely considerable depression of the olivine liquidus temperature, we argue that a hydrous (2-6% H2O) orthopyroxene-rich pyroxenite source was formed by the reaction between subducted slab-released SiO2-rich fluids and overlying mantle peridotite. We further propose that during a series of Phanerozoic successive subduction events around the Eastern NCC, a significant amount of water may have been transported to the lithospheric mantle, thus lowering its viscosity and ultimately destabilizing the cratonic lithosphere. Hydrous experiments data (circles filled by yellow color) used to parameterize the equation after screened several data significantly deviates from the line (circles without color). Data source: Gaetani and Grove (1998); Almeev et al. (2007); Médard and Grove (2008); Tenner et al. (2009); Mitchell and Grove (2015).

The effect of aluminum additions on the oxidation resistance of U 3Si 2

DOE PAGES

Wood, E. Sooby; White, J. T.; Nelson, A. T.

2017-04-01

The effect of aluminum additions to U 3Si 2 is investigated in this paper as a means to improve the oxidation resistance of this nuclear fuel form. Four U-Si-Al compositions have been synthesized and characterized using scanning electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. The onsets of breakaway oxidation are identified in air thermal ramp tests using thermogravimetric analysis. The final oxidation products following 1000° C air exposure are identified using x-ray diffraction and compared to those of UO 2 and U metal oxidized in the same manner. Finally, thermogravimetric data acquired in this study indicates that increasing amountsmore » of Al in U 3Si 2 further delays the onset of breakaway oxidation, providing enhanced oxidation resistance in air. Al 2O 3 formation on U 3Al 2Si 3 is observed following a heat treatment performed at 500° C in air, demonstrating the potential of Al additions to improve the oxidation resistance of U 3Si 2.« less

The effect of aluminum additions on the oxidation resistance of U 3Si 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, E. Sooby; White, J. T.; Nelson, A. T.

The effect of aluminum additions to U 3Si 2 is investigated in this paper as a means to improve the oxidation resistance of this nuclear fuel form. Four U-Si-Al compositions have been synthesized and characterized using scanning electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. The onsets of breakaway oxidation are identified in air thermal ramp tests using thermogravimetric analysis. The final oxidation products following 1000° C air exposure are identified using x-ray diffraction and compared to those of UO 2 and U metal oxidized in the same manner. Finally, thermogravimetric data acquired in this study indicates that increasing amountsmore » of Al in U 3Si 2 further delays the onset of breakaway oxidation, providing enhanced oxidation resistance in air. Al 2O 3 formation on U 3Al 2Si 3 is observed following a heat treatment performed at 500° C in air, demonstrating the potential of Al additions to improve the oxidation resistance of U 3Si 2.« less

Synergistic Effect of MoS2 and SiO2 Nanoparticles as Lubricant Additives for Magnesium Alloy–Steel Contacts

PubMed Central

Xie, Hongmei; Jiang, Bin; Hu, Xingyu; Peng, Cheng; Guo, Hongli; Pan, Fusheng

2017-01-01

The tribological performances of the SiO2/MoS2 hybrids as lubricant additives were explored by a reciprocating ball-on-flat tribometer for AZ31 magnesium alloy/AISI 52100 bearing steel pairs. The results demonstrated that the introduction of SiO2/MoS2 hybrids into the base oil exhibited a significant reduction in the friction coefficient and wear volume as well as an increase in load bearing capacity, which was better than the testing results of the SiO2 or MoS2 nanolubricants. Specifically, the addition of 0.1 wt % nano-SiO2 mixed with 1.0 wt % nano-MoS2 into the base oil reduced the friction coefficient by 21.8% and the wear volume by 8.6% compared to the 1.0 wt % MoS2 nanolubricants. The excellent lubrication behaviors of the SiO2/MoS2 hybrid nanolubricants can be explained by the micro-cooperation of different nanoparticles with disparate morphology and lubrication mechanisms. PMID:28644394

Structural and electrical properties of trimethylboron-doped silicon nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lew, K.-K.; Pan Ling; Bogart, Timothy E.

2004-10-11

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. Themore » difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.« less

Fabrication and properties of multilayer structures

NASA Astrophysics Data System (ADS)

Tiller, W. A.

1983-09-01

The synthesis of SiC films and Pd2Si films via single source and dual source sputtering, respectively, has been experimentally investigated while the reactive sputter deposition of SiO sub x films has been theoretically analyzed. The SiO sub x film data requires a mobile precursor adsorption process to be operative for the oxygen and an oxygen sticking coefficient of between 1.56 x 10 to the minus 3rd power and 4.17 x 10 to the minus 3rd power. An analysis of in-situ electrical diagnostics of the films via a non-contact technique shows the method to be of marginal accuracy for the example selected. An important new formulation of the stress and elastic constant tensors in the vicinity of interfaces has been developed and applied to the simple example of adsorbed layer/substrate interactions via a parametric analysis. Atomic modeling of the SiO system yields peroxide bond formation for oxygen-rich (100) alpha-cristobalite surfaces. Radial distribution function and angular distribution function data have been calculated for bulk alpha-quartz and bulk alpha-cristobalite in good agreement with experiment.

Do meteoritic silicon carbide grains originate from asymptotic giant branch stars of super-solar metallicity?

NASA Astrophysics Data System (ADS)

Lugaro, Maria; Karakas, Amanda I.; Pető, Mária; Plachy, Emese

2018-01-01

We compare literature data for the isotopic ratios of Zr, Sr, and Ba from analysis of single meteoritic stardust silicon carbide (SiC) grains to new predictions for the slow neutron-capture process (the s process) in metal-rich asymptotic giant branch (AGB) stars. The models have initial metallicities Z = 0.014 (solar) and Z = 0.03 (twice-solar) and initial masses 2-4.5 M⊙ , selected such as the condition C/O > 1 for the formation of SiC is achieved. Because of the higher Fe abundance, the twice-solar metallicity models result in a lower number of total free neutrons released by the 13C(α ,n)16O neutron source. Furthermore, the highest-mass (4-4.5 M⊙) AGB stars of twice-solar metallicity present a milder activation of the 22Ne(α ,n)25Mg neutron source than their solar metallicity counterparts, due to cooler temperatures resulting from the effect of higher opacities. They also have a lower amount of the 13C neutron source than the lower-mass models, following their smaller He-rich region. The combination of these different effects allows our AGB models of twice-solar metallicity to provide a match to the SiC data without the need to consider large variations in the features of the 13C neutron source nor neutron-capture processes different from the s process. This raises the question if the AGB parent stars of meteoritic SiC grains were in fact on average of twice-solar metallicity. The heavier-than-solar Si and Ti isotopic ratios in the same grains are in qualitative agreement with an origin in stars of super-solar metallicity because of the chemical evolution of the Galaxy. Further, the SiC dust mass ejected from C-rich AGB stars is predicted to significantly increase with increasing the metallicity.

Absolute cavity pyrgeometer

DOEpatents

Reda, Ibrahim

2013-10-29

Implementations of the present disclosure involve an apparatus and method to measure the long-wave irradiance of the atmosphere or long-wave source. The apparatus may involve a thermopile, a concentrator and temperature controller. The incoming long-wave irradiance may be reflected from the concentrator to a thermopile receiver located at the bottom of the concentrator to receive the reflected long-wave irradiance. In addition, the thermopile may be thermally connected to a temperature controller to control the device temperature. Through use of the apparatus, the long-wave irradiance of the atmosphere may be calculated from several measurements provided by the apparatus. In addition, the apparatus may provide an international standard of pyrgeometers' calibration that is traceable back to the International System of Units (SI) rather than to a blackbody atmospheric simulator.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gschneidner, Jr., Karl A.; Schmidt, Frederick A.

A carbothermic reduction method is provided for reducing a La-, Ce-, MM-, and/or Y-containing oxide in the presence of carbon and a source of a reactant element comprising Si, Ge, Sn, Pb, As, Sb, Bi, and/or P to form an intermediate alloy material including a majority of La, Ce, MM, and/or Y and a minor amount of the reactant element. The intermediate material is useful as a master alloy for in making negative electrode materials for a metal hydride battery, as hydrogen storage alloys, as master alloy additive for addition to a melt of commercial Mg and Al alloys, steels,more » cast irons, and superalloys; or in reducing Sm.sub.2O.sub.3 to Sm metal for use in Sm--Co permanent magnets.« less

The impact of Ti and temperature on the stability of Nb5Si3 phases: a first-principles study

PubMed Central

Papadimitriou, Ioannis; Utton, Claire; Tsakiropoulos, Panos

2017-01-01

Abstract Nb-silicide based alloys could be used at T > 1423 K in future aero-engines. Titanium is an important additive to these new alloys where it improves oxidation, fracture toughness and reduces density. The microstructures of the new alloys consist of an Nb solid solution, and silicides and other intermetallics can be present. Three Nb5Si3 polymorphs are known, namely αNb5Si3 (tI32 Cr5B3-type, D8l), βNb5Si3 (tI32 W5Si3-type, D8m) and γNb5Si3 (hP16 Mn5Si3-type, D88). In these 5–3 silicides Nb atoms can be substituted by Ti atoms. The type of stable Nb5Si3 depends on temperature and concentration of Ti addition and is important for the stability and properties of the alloys. The effect of increasing concentration of Ti on the transition temperature between the polymorphs has not been studied. In this work first-principles calculations were used to predict the stability and physical properties of the various Nb5Si3 silicides alloyed with Ti. Temperature-dependent enthalpies of formation were computed, and the transition temperature between the low (α) and high (β) temperature polymorphs of Nb5Si3 was found to decrease significantly with increasing Ti content. The γNb5Si3 was found to be stable only at high Ti concentrations, above approximately 50 at. % Ti. Calculation of physical properties and the Cauchy pressures, Pugh’s index of ductility and Poisson ratio showed that as the Ti content increased, the bulk moduli of all silicides decreased, while the shear and elastic moduli and the Debye temperature increased for the αNb5Si3 and γNb5Si3 and decreased for βNb5Si3. With the addition of Ti the αNb5Si3 and γNb5Si3 became less ductile, whereas the βNb5Si3 became more ductile. When Ti was added in the αNb5Si3 and βNb5Si3 the linear thermal expansion coefficients of the silicides decreased, but the anisotropy of coefficient of thermal expansion did not change significantly. PMID:28740563

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

PubMed

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Recent progress in Si thin film technology for solar cells

NASA Astrophysics Data System (ADS)

Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

1991-11-01

Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

NASA Astrophysics Data System (ADS)

Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd

2018-01-01

The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.

Laboratory Studies in UV and EUV Solar Physics

NASA Technical Reports Server (NTRS)

Wagner, William J. (Technical Monitor); Kohl, John L.

2005-01-01

A new 5 GHZ Electron Cyclotron Resonance (ECR) ion source for SAO's Ion Beam Experiment was designed, built and tested. Absolute cross sections were measured for electron impact excitation (EIE) in C(2+) (2s2p (3)P(sup o) - 2p(sup 2) (3)P), and empirical EIE rate coefficients were derived. The absolute cross section for EIE in Si(2+) (3s3p (3)P(sup o) - 3s3p (1)P(sup o)) was measured, and our experimental values for absolute cross sections for EIE in C(3+) (2s (2)S - 2p (2)P(sup o)) were reanalyzed and compared to values obtained by other experimental methods and by theory. In addition, a paper was published. The development and testing of the new ion source, the Si(2+) EIE measurements, and the reevaluation of the cross sections for C(3+) resulted from the Ph.D. research of Paul H. Janzen who completed the degree requirements for the Harvard University Department of Physics in 2002. John Kohl served as the Ph.D.Thesis Advisor. Because of delays in bringing the new ion source on line, the measurements of EIE in C(2+) (2s2p (3)P(sup o) - (2)p(sup 2) (3)P) were not completed until 2004. Preparations for measurements of EIE in C(2+) (1s(sup 2) (1)S - 2s2p (1)P(sup o)) are currently underway.

Low-reactive circulating fluidized bed combustion (CFBC) fly ashes as source material for geopolymer synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu Hui; Li Qin; Shen Lifeng

2010-01-15

In this contribution, low-reactive circulating fluidized bed combustion (CFBC) fly ashes (CFAs) have firstly been utilized as a source material for geopolymer synthesis. An alkali fusion process was employed to promote the dissolution of Si and Al species from the CFAs, and thus to enhance the reactivity of the ashes. A high-reactive metakaolin (MK) was also used to consume the excess alkali needed for the fusion. Reactivities of the CFAs and MK were examined by a series of dissolution tests in sodium hydroxide solutions. Geopolymer samples were prepared by alkali activation of the source materials using a sodium silicate solutionmore » as the activator. The synthesized products were characterized by mechanical testing, scanning electron microscopy (SEM), X-ray diffractography (XRD), as well as Fourier transform infrared spectroscopy (FTIR). The results of this study indicate that, via enhancing the reactivity by alkali fusion and balancing the Na/Al ratio by additional aluminosilicate source, low-reactive CFAs could also be recycled as an alternative source material for geopolymer production.« less

Auger-electron diffraction in the low kinetic-energy range: The Si(111)7×7 surface reconstruction and Ge/Si interface formation

NASA Astrophysics Data System (ADS)

de Crescenzi, M.; Gunnella, R.; Bernardini, R.; de Marco, M.; Davoli, I.

1995-07-01

We have investigated the Auger-electron diffraction (AED) of the L2,3VV Auger line of the clean 7×7 reconstructed Si(111) surface and the Ge/Si interface formed after a few monolayers (ML) of Ge deposition. The experimental AED in the low kinetic-energy regime has been interpreted within the framework of a multiple-scattering theory. The comparison of the AED data taken using both the x-ray source and an electron source evidences that the incident beam plays a negligible role when the experimental conditions require the use of an angular detector. The evolution of the Ge/Si(111) interface is studied by monitoring the intensity anisotropy of the Auger peaks of the two elements at room temperature (RT) and at 400 °C annealing temperature of the substrate. The evolution of the growth mechanism underlying the Ge/Si interface formation has been studied by exploiting the very low electron escape depth of this technique (<=5 Å). While at RT two monolayers of Ge deposition appear uniform and amorphous, the successive annealing induces an intermixing and a recrystallization only in the first two layers of the interface without any further interdiffusion. Furthermore, a Stranski-Krastanow growth mode has been deduced after deposition of 4 ML of Ge on a clean Si sample kept at 400 °C.

Microstructural optimization of solid-state sintered silicon carbide

NASA Astrophysics Data System (ADS)

Vargas-Gonzalez, Lionel R.

Silicon carbide armor, manufactured through solid-state sintering, liquid-phase sintering, and hot-pressing, is being used by the United States Armed Forces for personal and vehicle protection. There is a lack of consensus, however, on which process results in the best-performing ballistic armor. Previous studies have shown that hot-pressed ceramics processed with secondary oxide and/or rare earth oxides, which exhibit high fracture toughness, perform well in handling and under ballistic impact. This high toughness is due to the intergranular nature of the fracture, creating a tortuous path for cracks and facilitating crack deflection and bridging. However, it has also been shown that higher-hardness sintered SiC materials might perform similarly or better to hot-pressed armor, in spite of the large fracture toughness deficit, if the microstructure (density, grain size, purity) of these materials are improved. In this work, the development of theoretically-dense, clean grain boundary, high hardness solid-state sintered silicon carbide (SiC) armor was pursued. Boron carbide and graphite (added as phenolic resin to ensure the carbon is finely dispersed throughout the microstructure) were used as the sintering aids. SiC batches between 0.25--4.00 wt.% carbon were mixed and spray dried. Cylindrical pellets were pressed at 13.7 MPa, cold-isostatically pressed (CIP) at 344 MPa, sintered under varying sintering soaking temperatures and heating rates, and varying post hot-isostatic pressing (HIP) parameters. Carbon additive amounts between 2.0--2.5 wt.% (based on the resin source), a 0.36 wt.% B4C addition, and a 2050°C sintering soak yielded parts with high sintering densities (˜95.5--96.5%) and a fine, equiaxed microstructure (d50 = 2.525 mum). A slow ramp rate (10°C/min) prevented any occurrence of abnormal grain growth. Post-HIPing at 1900°C removed the remaining closed porosity to yield a theoretically-dense part (3.175 g/cm3, according to rule of mixtures). These parts exhibited higher density and finer microstructure than a commercially-available sintered SiC from Saint-Gobain (Hexoloy Enhanced, 3.153 g/cm3 and d50 = 4.837 mum). Due to the optimized microstructure, Verco SiC parts exhibited the highest Vickers (2628.30 +/- 44.13 kg/mm 2) and Knoop (2098.50 +/- 24.8 kg/mm2) hardness values of any SiC ceramic, and values equal to those of the "gold standard" hot-pressed boron carbide (PAD-B4C). While the fracture toughness of hot-pressed SiC materials (˜4.5 MPa m ) are almost double that of Verco SiC (2.4 MPa m ), Verco SiC is a better performing ballistic product, implying that the higher hardness of the theoretically-dense, clean-grain boundary, fine-grained SiC is the defining mechanical property for optimization of ballistic behavior.

Geochemistry of Sediment from IODP Expeditions 322 and 333: Terrigenous Provenance, Dispersed Ash, and the Nankai 'Subduction Factory'

NASA Astrophysics Data System (ADS)

Scudder, R.; Murray, R. W.; Schindlbeck, J.; Kutterolf, S.

2013-12-01

Terrigenous material and volcanic ash play important roles in the IODP Seismogenic Zone and 'Subduction Factory' initiatives. Particularly relevant to these projects are studies of geochemical budgets including how fluids within subducting sediment will be affected by hydration/dehydration reactions. Of great importance is the volcanic component, which occurs both as discrete ash layers and as ash dispersed throughout the sediment column and their related altered products in the down-going plate. Based on bulk sedimentary geochemical studies of IODP Sites C0011 and C0012 drilled during Expeditions 322 and 333, we will show the importance of dispersed ash to the Nankai subduction zone and document important changes in terrigenous provenance to these locations. The major elemental characteristics of the hemipelagic mudstones are remarkably consistent both downcore and between Site C0011 and Site C0012. For example, the average Si/Al ratio at both sites C0011 and C0012 is 3.3 × 0.2. This is observed in other key major elemental indicators as well (e.g., Fe2O3). Alkali elements, Trace elements and REEs exhibit greater downcore variability while remaining consistent between the sites. Ternary diagrams such as La-Th-Sc and Sc-Cr-Th as well as other geochemical plots (i.e., Sm/Al vs. Th/Al) show that Site C0011 and Site C0012 are fairly clustered, derived primarily from a continental arc source, and that distal sources to the sediment are important in addition to a modest and varying component from the proximal Izu-Bonin Island Arc. Multivariate statistical treatments are further being applied to the datasets from these sites to allow a better determination of the number of sources that make up the bulk sediment (and their provenance). Q-mode Factor Analysis was performed in order to determine the composition of potential end member contributions to these sites. The multivariate statistics indicate Site C0011 and C0012 each have 4-5 end members that explain 98% of the total variance in the data. These factors include those with very high SiO2, some with intermediate SiO2, and carbonate components. Applying these results in conjunction with Total Inversion, a linear regression technique, will allow us to determine the compositional variation of these end members. The potential mineralogical implications of these sources, contributing different amounts and species of magmatic minerals to the sediment, will also be presented. In addition we will examine the relationship between the source(s) of the discrete ash layers to the provenance of the dispersed ash component. Shipboard visual studies of the discrete ash layers identified at least two broad types of ash present at each site. Electron microprobe analysis of individual glass shards from ash layers at Sites 322 and 333 confirms the presence of two types of ash, the majority of the ashes are rhyolitic, while the rest are andesitic to dacitic in composition. Additionally, shipboard smear slide analysis noted a sharp gradient of glass alteration in ash layers at the Unit IA/IB boundary at Site C0011. Further work will determine how these discrete ash layers relate to the composition of the dispersed ash particularly in this section.

Net subterranean estuarine export fluxes of dissolved inorganic C, N, P, Si, and total alkalinity into the Jiulong River estuary, China

NASA Astrophysics Data System (ADS)

Wang, Guizhi; Wang, Zhangyong; Zhai, Weidong; Moore, Willard S.; Li, Qing; Yan, Xiuli; Qi, Di; Jiang, Yuwu

2015-01-01

To evaluate geochemical impacts of the subterranean estuary (STE) on the Jiulong River estuary, China, we estimated seasonal fluxes of subterranean water discharge into the estuary based on the mass balance of radium isotopes and net subterranean export fluxes of dissolved inorganic C (DIC), N (DIN), Si (DSi), soluble reactive phosphorus (SRP), and total alkalinity (TA). Based on 226Ra data, the subterranean discharge (in 107 m3 d-1) was estimated to be 0.29-0.60 in the spring, 0.69-1.44 in the summer, 0.45-0.93 in the fall, and 0.26-0.54 in the winter. This was equivalent to 8-19% of the concomitant river discharge. The net spatially integrated material fluxes from the STE into the estuary were equivalent up to 45-110% of the concomitant riverine fluxes for DIC and TA, around 14-32% for DSi and 7-19% for DIN, and negligible for SRP. Paradoxically, the mixing lines along the salinity gradient revealed no apparent additions of these species. These additions are not revealed because the STE is a relatively small spatially-averaged source (at most 11% of the total input at steady state) that spreads throughout the estuary as a non-point source in contrast to the major point sources of the river and the ocean for the estuary and a true open ocean endmember is likely lacking. Greater water flushing in the summer might dilute the STE effect on the mixing lines even more. The great spatial variation in salinity in the estuary introduced the major uncertainty in our estimates of the flushing time, which further affected the estimate of the subterranean discharge and associated material fluxes. Additionally, the great spatial variation in the STE endmember caused the relatively large ranges in these flux estimates. Despite apparent conservative mixing of DIC, DIN, and DSi in estuaries, net subterranean exports must be taken into account in evaluating geochemical impacts of estuarine exports on shelf waters.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

The effect of nano-SiC on characteristics of ADC12/nano-SiC composite with Sr and TiB addition produced by stir casting process

NASA Astrophysics Data System (ADS)

Anne Zulfia, S.; Salshabia, Nadella; Dhaneswara, Donanta; Utomo, Budi Wahyu

2018-05-01

ADC12 reinforced nano SiC has been successfully produced by stir casting process. Nano SiC was added into ADC12 alloy varied from 0.05 to 0.3 vf-% while Al-5Ti-1B and Sr were kept constant at 0.04 and 0.02 wt-% respectively to all composites. Mg was added 10 wt% to improve reinforce's wettability. The addition of Al-5Ti-1B to the alloy was as grain refiner while Sr was added to modify Mg2Si. All composites were characterized both microstructures analysis and mechanical properties include tensile strength, hardness, wear rate, impact strength, and porosity. The highest properties of composites was obtained at 0.3 vf-% nano SiC addition with UTS of 155.4 MPa, hardness of 46.16 HRB, impact strength of 0.22 J/mm2, and wear rate of 1.71 × 10-5 mm3/m. Tensile strength and hardness increased as grain size and porosities decreased. The highest wear resistance was investigated on the composition with the highest hardness. Impact strength decreased due to increasing volume fraction of nano-SiC. The phases present in microsturucture was dominantly Mg2Si which also affected mechanical properties of these composites.

Amorphous silicon thin-film transistor active-matrix for reflective cholesteric liquid crystal displays

NASA Astrophysics Data System (ADS)

Nahm, Jeong-Yeop

Reflective cholesteric liquid crystal displays (Ch-LCDs) have advantages, such as, high brightness, low power consumption, and wide viewing angle, since they do not need any polarizer, color filter, and backlight. Furthermore, due to their bistability Ch-LCDs can retain their images virtually forever without additional power consumption. But conventional passive-matrix addressing of Ch-LCDs allows only a slow image updating speed. Active-matrix addressing should allow fast image updating or video-rate operation. However, because the threshold voltage of cholesteric, liquid crystal is high (>20V), the switching devices for active-matrix addressing should satisfy required characteristics even under high bias conditions. In order to investigate the applicability of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) for the switching devices of active-matrix (AM) Ch-LCDs, the characteristics of conventional and gate offset high voltage a-Si:H TTFs were examined under high bias conditions. And it was concluded that high OFF-current of conventional a-Si:H TFTs and low ON-current of gate offset high voltage a-Si:H TFTs were main problems for reflective AM Ch-LCD applications. In order to improve the TFT characteristics under high bias conditions, we propose two new a-Si:H TFT structures called gate planarized (GP) and buried field plate (BFP) high voltage a-Si:H TFTs. Firstly, in the GP a-Si:H TFTs, we used a thick spin-coated benzocyclobutene (BCB) layer beneath a thin hydrogenated amorphous silicon nitride (a-SiNx:H) layer for gate insulator. The GP a-Si:H TFT showed normal TFT characteristic up to VGS = VDS = ˜100 V without any device failure. But TFT ON-current of GP a-Si:H TFT was reduced due to the introduction of the thick low dielectric BCB layer. Secondly, in the BFP a-Si:H TFT, an offset region and a buried field plate were introduced between the drain/source and gate electrodes to reduce the electric field in the pinch-off region. For this BFP a-Si:H TFT, a low OFF-current (1.04 pA) and a high ON/OFF-current ratio (5.68 x 106) up to VGS = VDS = ˜30 V were obtained. Based on our a-Si:H TFTs studies, we designed an a-Si:H TFT active-matrix panel and fabricated the AM Ch-LCDs either by optimizing a-Si:H TFT processing or adopting the GP a-Si:H TFT technology. The fabricated a-Si:H TFT active-matrix panels can be operated at the voltage of 50 and 60V, applied to the data and gate lines, respectively. With the a-Si:H TFT active-matrix panels, the AM Ch-LCDs were fabricated and operated with the frame rate of 60 Hz and the maximum contrast ratio of ˜30.

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

PubMed

Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2018-04-30

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Synthesis and Hydrodeoxygenation Properties of Ruthenium Phosphide Catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowker, Richard H.; Smith, Mica C.; Pease, Melissa

2011-07-01

Ru2P/SiO2 and RuP/SiO2 catalysts were prepared by the temperature-programmed reduction (TPR) of uncalcined precursors containing hypophosphite ion (H2PO2-) as the phosphorus source. The Ru2P/SiO2 and RuP/SiO2 catalysts had small average particle sizes (~4 nm) and high CO chemisorption capacities (90-110 umol/g). The Ru phosphide catalysts exhibited similar or higher furan (C4H4O) hydrodeoxygenation (HDO) activities than did a Ru/SiO2 catalyst, and the phosphide catalysts favored C4 hydrocarbon products while the Ru metal catalyst produced primarily C3 hydrocarbons.

Comparison of dust release from epoxy and paint nanocomposites and conventional products during sanding and sawing.

PubMed

Gomez, Virginia; Levin, Marcus; Saber, Anne T; Irusta, Silvia; Dal Maso, Miikka; Hanoi, Roberto; Santamaria, Jesus; Jensen, Keld A; Wallin, Håkan; Koponen, Ismo K

2014-10-01

The release of dust generated during sanding or sawing of nanocomposites was compared with conventional products without nanomaterials. Epoxy-based polymers with and without carbon nanotubes, and paints with different amounts of nano-sized titanium dioxide, were machined in a closed aerosol chamber. The temporal evolution of the aerosol concentration and size distribution were measured simultaneously. The morphology of collected dust by scanning electron microscopy was different depending on the type of nanocomposites: particles from carbon nanotubes (CNTs) nanocomposites had protrusions on their surfaces and aggregates and agglomerates are attached to the paint matrix in particles emitted from alkyd paints. We observed no significant differences in the particle size distributions when comparing sanding dust from nanofiller containing products with dust from conventional products. Neither did we observe release of free nanomaterials. Instead, the nanomaterials were enclosed or partly enclosed in the matrix. A source strength term Si (cm(-3) s(-1)) that describes particle emission rates from continuous sources was introduced. Comparison between the Si parameters derived from sanding different materials allows identification of potential effects of addition of engineered nanoparticles to a composite. © The Author 2014. Published by Oxford University Press on behalf of the British Occupational Hygiene Society.

Mechanism for Si-Si Bond Rupture in Single Molecule Junctions.

PubMed

Li, Haixing; Kim, Nathaniel T; Su, Timothy A; Steigerwald, Michael L; Nuckolls, Colin; Darancet, Pierre; Leighton, James L; Venkataraman, Latha

2016-12-14

The stability of chemical bonds can be studied experimentally by rupturing single molecule junctions under applied voltage. Here, we compare voltage-induced bond rupture in two Si-Si backbones: one has no alternate conductive pathway whereas the other contains an additional naphthyl pathway in parallel to the Si-Si bond. We show that in contrast to the first system, the second can conduct through the naphthyl group when the Si-Si bond is ruptured using an applied voltage. We investigate this voltage induced Si-Si bond rupture by ab initio density functional theory calculations and molecular dynamics simulations that ultimately demonstrate that the excitation of molecular vibrational modes by tunneling electrons leads to homolytic Si-Si bond rupture.

Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

NASA Astrophysics Data System (ADS)

Schuitemaker, P.; Houston, P. A.

1986-11-01

Open-tube diffusion techniques used between 450 and 600° C are described which involve the supply of diffusant from a vapour source (via a solution) and a solid evaporated metal source. Investigations of Zn into InP and InGaAs(P) have been undertaken using both sources. SIMS profile analyses show that in the case of the vapour source the profiles indicate a concentration-dependent diffusion coefficient while the solid source diffusions can be well described by a Gaussian-type profile. The usefulness of the vapour source method has been demonstrated in the fabrication of bipolar transistors which exhibit good d.c. characteristics. The solid source method is limited by the slow diffusion velocity and more gradual profile. The InGaAs(P)/InP materials system has important applications in optical communications and future high speed microwave and switching devices. Useful technologies allied to the introduction of impurities into Si by diffusion, have gradually been emerging for use in the III-V semiconductor family. Closed tube systems1 have been used in order to contain the volatile group V species and prevent surface erosion. In addition, simpler open tube systems2,3 have been developed that maintain a sufficient overpressure of the group V element. Zn and Cd p-dopants have been studied extensively because of the volatility and relatively large diffusion rates in III-V semiconductors. Opentube diffusion into both InP and InGaAs2-6 has been studied but little detail has appeared concerning InGaAs and InGaAsP. In this paper we describe a comprehensive study of the diffusion of Zn into InP and InGaAs(P) using both open-tube vapour source and a Au/Zn/Au evaporated solid source with SiNx acting both as a mask and also an encapsulant to prevent loss of Zn and decomposition of the substrate material. The techniques have been successfully applied to the fabrication of InP/lnGaAs heterojunction bipolar transistors which show good dc characteristics. Reference to InGaAs in the text implies the InP lattice-matched composition In0.53Ga0.47As.

Constraining mechanisms of quartz precipitation in the Archean ocean using silicon isotopes

NASA Astrophysics Data System (ADS)

Brengman, L. A.; Fedo, C.; Martin, W.

2017-12-01

To constrain reservoir values for the Archean silica cycle we measured silicon isotope compositions (δ30Si) of 28 igneous, siliciclastic sedimentary, hydrothermal, and chemical sedimentary rock samples from three Archean greenstone belts representing different times (>3.7 - 2.7 Ga) and tectonic regimes. We posit that silicon isotope compositions of quartz (746 analyses measured in situ by secondary ion mass spectrometry at the NORDSIM facility) are linked to changes in key geochemical parameters that vary within local depositional environments, coupled with a dependency on size and δ30Si composition of the source reservoir. Collectively, siliceous precipitates from even a single basin span a 7‰ range in δ30Si values. Such heterogeneity, regardless of basinal position or presence of Fe-phases demonstrates that δ30Si values of chemical sediments are linked to neither a well-mixed water column representative of a single ocean composition, nor a specific time in Earth history. Combining data from all three greenstone belts we discern that all measured Algoma-type iron formation (IF) and about 50% of associated chert samples possess δ30Si values <0‰, while the majority of silicified volcanic rocks and the remaining 50% of chert samples have δ30Si values >0‰. Negative values of Algoma-type IF can be explained by rate-dependent fractionation during precipitation and/or adsorption to Fe/Al. Combined experimental and natural data for quartz precipitates suggest slow precipitation rates coupled with closed system, Rayleigh type distillation could produce the isotopically heavy values. Such results suggest the quartz-precipitating fluid for these rocks evolves from an open system in disequilibrium, to one that is closed, and in equilibrium with the host rock. In contrast to the static range of values through time for Algoma-type IF, associated cherts and silicified rocks, compiled data for Superior-type IF from 3 - 1.8 Ga record a systematic increasing trend from dominantly 30Si-depleted to 30Si-enriched values over the Archean-Paleoproterozoic transition. Interpreted in the context of our provisional, mass-balance based flux model for the Precambrian silicon cycle, we conclude the 30Si-enrichment to reflect the evolving δ30Si composition of the ocean due to the addition of continentally derived silica.

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

Vapor-liquid-solid growth of <110> silicon nanowire arrays

NASA Astrophysics Data System (ADS)

Eichfeld, Sarah M.; Hainey, Mel F.; Shen, Haoting; Kendrick, Chito E.; Fucinato, Emily A.; Yim, Joanne; Black, Marcie R.; Redwing, Joan M.

2013-09-01

The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.

VizieR Online Data Catalog: Relativistic MR-MP energy levels for Si (Santana+, 2018)

NASA Astrophysics Data System (ADS)

Santana, J. A.; Lopez-Dauphin, N. A.; Beiersdorfer, P.

2018-03-01

Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI, and Si XII. The energies have been calculated with the relativistic Multi- Reference Moller-Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) online database. The average deviation of valence level energies ranges from 0.20eV in SiV to 0.04eV in SiXII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3eV for K-vacancy states. The extensive and accurate data set presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory-generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements. (1 data file).

Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan, E-mail: sraghavan@cense.iisc.ernet.in

2015-04-28

Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important partmore » of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.« less

Preparation of Si3N4 Form Diatomite via a Carbothermal Reduction-Nitridation Process

NASA Astrophysics Data System (ADS)

Ma, Bin; Huang, Zhaohui; Mei, Lefu; Fang, Minghao; Liu, Yangai; Wu, Xiaowen; Hu, Xiaozhi

2016-05-01

Si3N4 was produced using diatomite and sucrose as silicon and carbon sources, respectively. The effect of the C/SiO2 molar ratio, heating temperature and soaking time on the morphology and phase compositions of the final products was investigated by scanning electron microscopy, x-ray diffraction analysis and energy dispersive spectroscopy. The phase equilibrium relationships of the system at different heating temperatures were also investigated based on the thermodynamic analysis. The results indicate that the phase compositions depended on the C/SiO2 molar ratio, heating temperature and soaking time. Fabrication of Si3N4 from the precursor via carbothermal reduction nitridation was achieved at 1550°C for 1-8 h using a C/SiO2 molar ratio of 3.0. The as-prepared Si3N4 contained a low amount of Fe3Si (<1 wt.%).

Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zeng, J. M.; Wang, H.; Shang, S. X.; Wang, Z.; Wang, M.

1996-12-01

Magnesium oxide (MgO) thin films have been prepared on Si(100), {SiO2(100) }/{Si} and {Pt(111) }/{Si} substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( Ts) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( Ts ≈ 400-680°C), {SiO2}/{Si} and {Pt}/{Si} were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.

Effect of SiO2 on immobilization of metals and encapsulation of a glass network in slag.

PubMed

Kuo, Yi-Ming; Lin, Ta-Chang; Tsai, Perng-Jy

2003-11-01

The final disposal of ash from an incinerator is of special concern because of the possibility of its releasing toxic substances. Melting/vitrification has been regarded as a prospective technology of ash treatment. The object of this investigation was to evaluate the effect of silica (SiO2) addition on the immobilization of hazardous metals and the encapsulation of a glass network during the vitrification process. Four specimens with SiO2/fly ash mixing ratios of 0, 0.1, 0.2, and 0.3, respectively, were tested. The mobility of metals in slag was then estimated by a sequential extraction procedure. X-ray diffraction analysis indicates that SiO2 leads to the polymerization of silicates. The encapsulation of aluminum, calcium, and magnesium would not be observed unless adequate amount of SiO2 was added. It was also found that SiO2 addition enhances the formation of a compact and interconnected glass network structure and, thus, contributes to the chemical stability of metals in slag. After vitrification, the mobility of cadmium, copper, iron, chromium, nickel, lead, and zinc was significantly reduced. However, there is no significant correlation between the immobilization of these metals and the addition of SiO2.

40 CFR Table 4 to Subpart Jjjj of... - Applicability of Mobile Source Provisions for Manufacturers Participating in the Voluntary...

Code of Federal Regulations, 2010 CFR

2010-07-01

... SI ICE to Emission Standards in Table 1 of Subpart JJJJ 4 Table 4 to Subpart JJJJ of Part 60... Stationary SI ICE to Emission Standards in Table 1 of Subpart JJJJ [As stated in § 60.4247, you must comply... voluntary certification program and certifying stationary SI ICE to emission standards in Table 1 of subpart...

40 CFR Table 4 to Subpart Jjjj of... - Applicability of Mobile Source Provisions for Manufacturers Participating in the Voluntary...

Code of Federal Regulations, 2014 CFR

2014-07-01

... SI ICE to Emission Standards in Table 1 of Subpart JJJJ 4 Table 4 to Subpart JJJJ of Part 60... Stationary SI ICE to Emission Standards in Table 1 of Subpart JJJJ [As stated in § 60.4247, you must comply... voluntary certification program and certifying stationary SI ICE to emission standards in Table 1 of subpart...

40 CFR Table 4 to Subpart Jjjj of... - Applicability of Mobile Source Provisions for Manufacturers Participating in the Voluntary...

Code of Federal Regulations, 2012 CFR

2012-07-01

... SI ICE to Emission Standards in Table 1 of Subpart JJJJ 4 Table 4 to Subpart JJJJ of Part 60... Stationary SI ICE to Emission Standards in Table 1 of Subpart JJJJ [As stated in § 60.4247, you must comply... voluntary certification program and certifying stationary SI ICE to emission standards in Table 1 of subpart...

40 CFR Table 4 to Subpart Jjjj of... - Applicability of Mobile Source Provisions for Manufacturers Participating in the Voluntary...

Code of Federal Regulations, 2013 CFR

2013-07-01

... SI ICE to Emission Standards in Table 1 of Subpart JJJJ 4 Table 4 to Subpart JJJJ of Part 60... Stationary SI ICE to Emission Standards in Table 1 of Subpart JJJJ [As stated in § 60.4247, you must comply... voluntary certification program and certifying stationary SI ICE to emission standards in Table 1 of subpart...

40 CFR Table 4 to Subpart Jjjj of... - Applicability of Mobile Source Provisions for Manufacturers Participating in the Voluntary...

Code of Federal Regulations, 2011 CFR

2011-07-01

... SI ICE to Emission Standards in Table 1 of Subpart JJJJ 4 Table 4 to Subpart JJJJ of Part 60... Stationary SI ICE to Emission Standards in Table 1 of Subpart JJJJ [As stated in § 60.4247, you must comply... voluntary certification program and certifying stationary SI ICE to emission standards in Table 1 of subpart...

The source of dissolved silicon in soil surface solutions of a temperate forest ecosystem: Ge/Si and Si isotope ratios as biogeochemical tracers

NASA Astrophysics Data System (ADS)

Cornelis, J.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

2010-12-01

Understand the biogeochemical cycle of silicon (Si) in the Earth’s critical zone and the dissolved Si transfer from the litho-pedosphere into the hydrosphere is of great interest for the global balance of biogeochemical processes, including the global C cycle. Indeed, the interaction between Si and C cycles regulates the atmospheric CO2 through the chemical weathering of silicate minerals, the C sequestration in stable organo-mineral compounds and the Si nutrition of phytoplankton CO2-consumers in oceans. H4SiO4 released by mineral dissolution contributes to the critical zone evolution through neoformation of secondary minerals, adsorption onto hydroxyl-bearing phases and recycling by vegetation and return of phytoliths on topsoil. The neoformation of secondary precipitates (clay minerals and phytoliths polymerized in plants) and adsorption of Si onto Fe and Al (hydr)oxides are processes favoring the light Si isotope incorporation, generating rivers enriched in heavy Si isotopes. On the other hand, clay minerals and phytoliths display contrasting Ge/Si ratios since clay-sized weathering products are enriched in Ge and phytoliths are depleted in Ge. Thus stable Si isotope and Ge/Si ratios constitute very interesting proxies to trace transfer of Si in the critical zone. Here we report Si isotopic and Ge/Si ratios of the different Si pools in a temperate soil-tree system (Breuil experimental forest, France) involving various tree species grown on Alumnic Cambisol derived from granitic bedrock. Relative to granitic bedrock (δ30Si = -0.07 ‰; Ge/Si = 2.5 µmol/mol), clay-sized minerals are enriched in 28Si (-1.07 ‰) and Ge (6.2 µmol/mol) while phytoliths are enriched in 28Si (-0.28 to -0.64 ‰) and depleted in Ge (0.1 to 0.3 µmol/mol). This contrast allows us to infer the relative contribution of litho/pedogenic and biogenic mineral dissolution on the release of H4SiO4 in soil surface solutions. The Si-isotope signatures and Ge/Si ratios of forest floor solutions evolve towards lighter values (-1.38 and -2.05 ‰) and higher Ge/Si ratios (2.7 µmol/mol) relative to granite bedrock. This suggests a partial dissolution of 28Si and Ge-enriched secondary clays minerals incorporated by bioturbation in organic-rich horizons, with a fractionation releasing preferentially light Si isotopes. Without considering that organic acids promote dissolution of minerals, clay minerals detected in the organic layer (vermiculite, chlorite, illite and Ca-montmorillonite) are not stable and could have been partially dissolved and transformed in the chemical environment of forest floor. Sources of H4SiO4 in forest floor solutions are influenced by tree species which control the extent of clay-sized minerals mixed in organic horizons by bioturbation and, to a lesser extent, the Si recycling by forest vegetation.

Proof of feasibility of the Vacuum Silicon PhotoMultiplier Tube (VSiPMT)

NASA Astrophysics Data System (ADS)

Barbarino, G.; Campajola, L.; de Asmundis, R.; De Rosa, G.; Fiorillo, G.; Migliozzi, P.; Barbato, F. C. T.; Mollo, C. M.; Russo, A.; Vivolo, D.

2013-04-01

The Vacuum Silicon PhotoMultiplier Tube (VSiPMT) is an innovative design we propose for a modern hybrid photodetector based on the combination of a Silicon PhotoMultiplier (SiPM) with a hemispherical vacuum glass PMT standard envelope. The basic idea is to replace the classical dynode chain of a PMT with a SiPM, which acts as an electron multiplying detector. Such a solution will match the goal of a large photocathode sensitive area with the performances of a SiPM. This will lead to many advantages such as lower power consumption, mild sensitivity to magnetic fields and high quantum efficiency. The feasibility of this idea has been throughly studied both from a theoretical and experimental point of view. As a first step we performed the full characterization of a special non-windowed Hamamatsu MPPC with a laser source. The response of the SiPM to an electron beam was studied as a function of the energy and of the incident angle by means of a Geant4-based simulation. In this paper we present the preliminary results of the characterization of the SiPM with an electron source and we discuss how the development of next generation SiPMs will overcome the main weaknesses of VSiPMT, such as relatively low PDE and high photocathode voltage.

Comparison of low frequency charge noise in identically patterned Si/SiO{sub 2} and Si/SiGe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freeman, Blake M.; Schoenfield, Joshua S.; Jiang, HongWen

We investigate and compare the charge noise in Si/SiO{sub 2} and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO{sub 2} compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO{sub 2} is a potential candidate for spin basedmore » quantum computing.« less

Effects of oxide additions and temperature on sinterability of milled silicon nitride

NASA Technical Reports Server (NTRS)

Arias, A.

1980-01-01

Specimens of milled alpha-Si3N4 with 0 to 5.07 equivalent percent of oxide additions were pressureless sintered at 1650 to 1820 C for 4 hours in nitrogen while covered with powdered Si3N4 + SiO2. Densities of less than or equal to 97.5 percent resulted with approximately 2.5 equivalent percent of MgO, CeO2, Y2O3, and three mixtures involving these oxides. Densities of greater than or equal to 94 percent were obtained with approximately 0.62 equivalent percent of the same additives. At most temperatures, best sinterability (density maxima) was obtained with 1.2 to 2.5 equivalent percent additive.

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

NASA Astrophysics Data System (ADS)

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.

2017-11-01

We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.

Effect of Copper and Zirconium Addition on Properties of Fe-Co-Si-B-Nb Bulk Metallic Glasses

NASA Astrophysics Data System (ADS)

Ikram, Haris; Khalid, Fazal Ahmad; Akmal, Muhammad; Abbas, Zameer

2017-07-01

In this research work, iron-based bulk metallic glasses (BMGs) have been fabricated, characterized and compared with Fe-Si alloy. BMG alloys of composition ((Fe0.6Co0.4)0.75B0.20Si0.05)96Nb4) were synthesized by suction casting technique using chilled copper die. Effect of copper and zirconium addition on magnetic, mechanical, thermal and electrochemical behavior of ((Fe0.6Co0.4)0.75B0.20Si0.05)96Nb4 BMGs was investigated. Furthermore, effect of annealing on nano-crystallization and subsequently on magnetic and mechanical behavior was also analyzed. Amorphousness of structure was evidenced by XRD analysis and microscopic visualization, whereas nano-crystallization behavior was identified by peak broadening of XRD patterns. Magnetic properties, measured by vibrating sample magnetometer, were found to be improved for as-cast BMG alloys by copper addition and further enhanced by nano-crystallization after annealing. Mechanical properties were observed to be increased by zirconium addition while slightly declined by copper addition. Potentiodynamic polarization analysis manifested the positive role of zirconium in enhancing corrosion resistance of BMGs in acidic, basic and brine mediums. Moreover, mechanical properties and corrosion analysis results affirmed the superiority of BMG alloys over Fe-Si alloy.

The role of calcium, silicon and salicylic acid treatment in protection of canola plants against boron toxicity stress.

PubMed

Metwally, Ashraf M; Radi, Abeer A; El-Shazoly, Rasha M; Hamada, Afaf M

2018-01-22

Boron (B) toxicity often limits crop yield and the quality of production in agricultural areas. Here, we investigated the effects of calcium (Ca), silicon (Si) and salicylic acid (SA) on development of B toxicity, B allocation in canola (Brassica napus cultivar Sarw 4) and its role in non-enzymatic antioxidants in relation to yield of this cultivar under B toxicity. Canola seedlings were subjected to four B levels induced by boric acid in the absence or presence of Ca, Si and SA. The results showed that Ca, Si and SA addition ameliorated the inhibition in canola growth, water content (WC), and improved siliqua number, siliqua weight and seed index. The B content in shoots and roots and total B accumulation in the whole plant were increased in control plants under B-toxicity-stress, and these parameters were significantly decreased by addition of Ca, Si and SA. The shoot ascorbate pool (ascorbate, AsA, and dehydroascorbate, DHA), α-tocopherol and phenolics (free and bound) were increased under B toxicity, and were significantly decreased in most cases by addition of Ca, Si and SA, except α-tocopherol, which increased at low B levels (0, 25 and 50 mg kg soil -1 ). The glutathione content did not obviously change by B stress, while added Ca, Si and SA inhibited its accumulation under B stress. In addition, B toxicity reduced the shoot flavonoids content; however, this reduction was not alleviated by the use of Ca, Si and SA treatments. It could be concluded that growth and yield of canola plants grown under high B concentration improved after external application of Ca, Si or SA.

Effect of Y addition on crystallization behavior and soft-magnetic properties of Fe78Si9B13 ribbons

NASA Astrophysics Data System (ADS)

Zhanwei, Liu; Dunbo, Yu; Kuoshe, Li; Yang, Luo; Chao, Yuan; Zilong, Wang; Liang, Sun; Kuo, Men

2017-08-01

A series of amorphous Fe-Si-B ribbons with various Y addition were prepared by melt-spinning. The effect of Y addition on crystallization behavior, thermal and magnetic properties was systematically investigated. With the increase of Y content, the initial crystallization temperature shifted to a higher temperature, indicating that the thermal stability of amorphous state in Fe-Si-B-Y ribbon is enhanced compared to that of Fe-Si-B alloy. Meanwhile, compared to the two exothermic peaks in the samples with lower Y content, a new exothermic peak was found in the ribbons with Y content higher than 1 at%, which corresponded to the decomposition of metastable Fe3B phase. Among all the alloys, Fe76.5Si9B13Y1.5 alloy exhibits optimized magnetic properties, with high saturation magnetization Ms of 187 emu/g and low coercivity HcJ of 7.6 A/m.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

High δ56Fe values in Samoan basalts

NASA Astrophysics Data System (ADS)

Konter, J. G.; Pietruszka, A. J.; Hanan, B. B.; Finlayson, V.

2014-12-01

Fe isotope fractionation spans ~0-0.4 permil in igneous systems, which cannot all be attributed to variable source compositions since peridotites barely overlap these compositions. Other processes may fractionate Fe isotopes such as variations in the degree of partial melting, magmatic differentiation, fluid addition related to the final stages of melt evolution, and kinetic fractionation related to diffusion. An important observation in igneous systems is the trend of increasing Fe isotope values against an index of magmatic fractionation (e.g. SiO2; [1]). The data strongly curve from δ56Fe >0.3 permil for SiO2 >70 wt% down to values around 0.09 permil from ~65 wt% down to 40 wt% SiO2 of basalts. However, ocean island basalts (OIBs) have a slightly larger δ56Fe variability than mid ocean ridge basalts (MORBs; [e.g. 2]). We present Fe isotope data on samples from the Samoan Islands (OIB) that have unusually high δ56Fe values for their SiO2 content. We rule out alteration by using fresh samples, and further test for the effects of magmatic processes on the δ56Fe values. In order to model the largest possible fractionation, unusually small degrees of melting with extreme fractionation factors are modeled with fractional crystallization of olivine alone, but such processing fails to fractionate the Fe isotopes to the observed values. Moreover, Samoan lavas likely also fractionated clinopyroxene, and its lower fractionation factor would limit the final δ56Fe value of the melt. We therefore suggest the mantle source of Samoan lavas must have had unusually high δ56Fe. However, there is no clear correlation with the highly radiogenic isotope signatures that reflect the unique source compositions of Samoa. Instead, increasing melt extraction correlates with lower δ56Fe values in peridotites assumed to be driven by the preference for the melt phase by heavy Fe3+, while high values may be related to metasomatism [3]. The latter would be in line with metasomatized xenoliths from Samoa [4]. [1] Heimann et al., 2008, doi:10.1016/j.gca.2008.06.009 [2] Teng et al., 2013, doi:10.1016/j.gca.2012.12.027 [3] Williams et al., 2004, doi: 10.1126/science.1095679 [4] Hauri et al., 1993, doi: 10.1038/365221a0

Using mineral geochemistry to decipher slab, mantle, and crustal inputs to the generation of high-Mg andesites from Mount Baker and Glacier Peak, northern Cascade arc

NASA Astrophysics Data System (ADS)

Sas, M.; DeBari, S. M.; Clynne, M. A.; Rusk, B. G.

2015-12-01

A fundamental question in geology is whether subducting plates get hot enough to generate melt that contributes to magmatic output in volcanic arcs. Because the subducting plate beneath the Cascade arc is relatively young and hot, slab melt generation is considered possible. To better understand the role of slab melt in north Cascades magmas, this study focused on petrogenesis of high-Mg andesites (HMA) and basaltic andesites (HMBA) from Mt. Baker and Glacier Peak, Washington. HMA have unusually high Mg# relative to their SiO2 contents, as well as elevated La/Yb and Dy/Yb ratios that are interpreted to result from separation of melt from a garnet-bearing residuum. Debate centers on the garnet's origin as it could be present in mineral assemblages from the subducting slab, deep mantle, thick lower crust, or basalt fractionated at high pressure. Whole rock analyses were combined with major, minor, and trace element analyses to understand the origin of these HMA. In the Tarn Plateau (Mt. Baker) flow unit (51.8-54.0 wt.% SiO2, Mg# 68-70) Mg#s correlate positively with high La/Yb in clinopyroxene equilibrium liquids, suggesting an origin similar to that of Aleutian adakites, where slab-derived melts interact with the overlying mantle to become Mg-rich and subsequently mix with mantle-derived basalts. The source for high La/Yb in the Glacier Creek (Mt. Baker) flow unit (58.3-58.7 wt.% SiO2, Mg# 63-64) is more ambiguous. High whole rock Sr/P imply origin from a mantle that was hydrated by an enriched slab component (fluid ± melt). In the Lightning Creek (Glacier Peak) flow unit (54.8-57.9 SiO2, Mg# 69-72) Cr and Mg contents in Cr-spinel and olivine pairs suggest a depleted mantle source, and high whole rock Sr/P indicate hydration-induced mantle melting. Hence Lightning Creek is interpreted have originated from a refractory mantle source that interacted with a hydrous slab component (fluid ± melt). Our results indicate that in addition to slab-derived fluids, slab-derived melts also have an important role in the production of HMA in the north Cascade arc.

Bis(tri-n-hexylsilyl oxide) silicon phthalocyanine: a unique additive in ternary bulk heterojunction organic photovoltaic devices.

PubMed

Lessard, Benoît H; Dang, Jeremy D; Grant, Trevor M; Gao, Dong; Seferos, Dwight S; Bender, Timothy P

2014-09-10

Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

Effects of SiO2 substitution on wettability of laser deposited Ca-P biocoating on Ti-6Al-4V.

PubMed

Yang, Yuling; Paital, Sameer R; Dahotre, Narendra B

2010-09-01

Silicon (Si) substitution in the crystal structure of calcium phosphate (CaP) ceramics has proved to generate materials with improved bioactivity than their stoichiometric counterpart. In light of this, in the current work, 100 wt% hydroxyapatite (HA) precursor and 25 wt% SiO(2)-HA precursors were used to prepare bioactive coatings on Ti-6Al-4V substrates by a laser cladding technique. The effects of SiO(2) on phase constituents, crystallite size, surface roughness, and surface energy of the CaP coatings were studied. Furthermore, on the basis of these results, the effects and roles of SiO(2) substitution in HA were systematically discussed. X-ray diffraction analysis of the coated samples indicated the presence of various phases such as CaTiO(3), Ca(2)SiO(4), Ca(3)(PO(4))(2), TiO(2) (Anatase), and TiO(2) (Rutile). The addition of SiO(2) in the HA precursor resulted in the refinement of grain size. Confocal laser microscopy characterization of the surface morphology demonstrated an improved surface roughness for samples with 25 wt% SiO(2)-HA precursor compared to the samples with 100 wt% HA precursor processed at 125 cm/min laser speed. The addition of SiO(2) in the HA precursor resulted in the highest surface energy, increased hydrophilicity, and improved biomineralization as compared to the control (untreated Ti-6Al-4V) and the sample with 100 wt% HA as precursor. The microstructural evolution observed using a scanning electron microscopy indicated that the addition of SiO(2) in the HA precursor resulted in the presence of reduced cracking across the cross-section of the bioceramic coating.

EUV multilayer mirrors with enhanced stability

NASA Astrophysics Data System (ADS)

Benoit, Nicolas; Yulin, Sergiy; Feigl, Torsten; Kaiser, Norbert

2006-08-01

The application of multilayer optics in EUV lithography requires not only the highest possible normal-incidence reflectivity but also a long-term thermal and radiation stability at operating temperatures. This requirement is most important in the case of the collector mirror of the illumination system close to the EUV source where a short-time decrease in reflectivity is most likely. Mo/Si multilayer mirrors, designed for high normal reflectivity at the wavelength of 13.5 nm and deposited by dc magnetron sputtering, were directly exposed to EUV radiation without mitigation system. They presented a loss of reflectivity of more than 18% after only 8 hours of irradiation by a Xe-discharge source. Another problem of Mo/Si multilayers is the instability of reflectivity and peak wavelength under high heat load. It becomes especially critical at temperatures above 200°C, where interdiffusion between the molybdenum and the silicon layers is observed. The development of high-temperature multilayers was focused on two alternative Si-based systems: MoSi II/Si and interface engineered Mo/C/Si/C multilayer mirrors. The multilayer designs as well as the deposition parameters of all systems were optimized in terms of high peak reflectivity (>= 60 %) at a wavelength of 13.5 nm and high thermal stability. Small thermally induced changes of the MoSi II/Si multilayer properties were found but they were independent of the annealing time at all temperatures examined. A wavelength shift of -1.7% and a reflectivity drop of 1.0% have been found after annealing at 500°C for 100 hours. The total degradation of optical properties above 650°C can be explained by a recrystallization process of MoSi II layers.

Novel passivation dielectrics-The boron- or phosphorus-doped hydrogenated amorphous silicon carbide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.Y.; Fang, Y.K.; Huang, C.F.

1985-02-01

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared and studied in a radiofrequency glowdischarge system, using a gas mixture of SiH/sub 4/ and one of the following carbon sources: methane (CH/sub 4/), benzene (C/sub 6/H/sub 6/), toluene (C/sub 7/H/sub 8/), sigma-xylene (C/sub 8/H/sub 10/), trichloroethane (C/sub 2/H/sub 3/Cl/sub 3/), trichloroethylene (C/sub 2/HCl/sub 3/), or carbon tetrachloride (CCl/sub 4/). The effect of doping phosphorus and boron into those a-SiC:H films on chemical etching rate, electrica dc resistivity, breakdown strength, and optical refractive index have been systematically investigated. Their chemical etching properties were examined by immersing in 49% HF, buffered HF,more » 180/sup 0/C H/sub 3/PO/sub 4/ solutions, or in CF/sub 4/ + O/sub 2/ plasma. It was found that the boron-doped a-SiC:H film possesses five times slower etching rate than the undoped one, while phosphorus-doped a-SiC:H film shows about three times slower. Among those a-SiC:H films, the one obtained from a mixture of SiH/sub 4/ and benzene shows the best etch-resistant property, while the ones obtained from a mixture of SiH/sub 4/ and chlorine containing carbon sources (e.g., trichloroethylene, trichloroethane, or carbon tetrachloride) shows that they are poor in etching resistance (i.e., the etching rate is higher). By measuring dc resistivity, dielectric breakdown strength, and effective refractive index, it was found that boron- or phosphorus-doped a-SiC:H films exhibit much higher dielectric strength and resistivity, but lower etching rate, presumably because of higher density.« less

Glass in the submarine section of the HSDP2 drill core, Hilo, Hawaii

NASA Astrophysics Data System (ADS)

Stolper, Edward; Sherman, Sarah; Garcia, Michael; Baker, Michael; Seaman, Caroline

2004-07-01

The Hawaii Scientific Drilling Project recovered ˜3 km of basalt by coring into the flank of Mauna Kea volcano at Hilo, Hawaii. Rocks recovered from deeper than ˜1 km were deposited below sea level and contain considerable fresh glass. We report electron microprobe analyses of 531 glasses from the submarine section of the core, providing a high-resolution record of petrogenesis over ca. 200 Kyr of shield building of a Hawaiian volcano. Nearly all the submarine glasses are tholeiitic. SiO2 contents span a significant range but are bimodally distributed, leading to the identification of low-SiO2 and high-SiO2 magma series that encompass most samples. The two groups are also generally distinguishable using other major and minor elements and certain isotopic and incompatible trace element ratios. On the basis of distributions of high- and low-SiO2 glasses, the submarine section of the core is divided into four zones. In zone 1 (1079-˜1950 mbsl), most samples are degassed high-SiO2 hyaloclastites and massive lavas, but there are narrow intervals of low-SiO2 hyaloclastites. Zone 2 (˜1950-2233 mbsl), a zone of degassed pillows and hyaloclastites, displays a continuous decrease in silica content from bottom to top. In zone 3 (2233-2481 mbsl), nearly all samples are undegassed low-SiO2 pillows. In zone 4 (2481-3098 mbsl), samples are mostly high-SiO2 undegassed pillows and degassed hyaloclastites. This zone also contains most of the intrusive units in the core, all of which are undegassed and most of which are low-SiO2. Phase equilibrium data suggest that parental magmas of the low-SiO2 suite could be produced by partial melting of fertile peridotite at 30-40 kbar. Although the high-SiO2 parents could have equilibrated with harzburgite at 15-20 kbar, they could have been produced neither simply by higher degrees of melting of the sources of the low-SiO2 parents nor by mixing of known dacitic melts of pyroxenite/eclogite with the low-SiO2 parents. Our hypothesis for the relationship between these magma types is that as the low-SiO2 magmas ascended from their sources, they interacted chemically and thermally with overlying peridotites, resulting in dissolution of orthopyroxene and clinopyroxene and precipitation of olivine, thereby generating high-SiO2 magmas. There are glasses with CaO, Al2O3, and SiO2 contents slightly elevated relative to most low-SiO2 samples; we suggest that these differences reflect involvement of pyroxene-rich lithologies in the petrogenesis of the CaO-Al2O3-enriched glasses. There is also a small group of low-SiO2 glasses distinguished by elevated K2O and CaO contents; the sources of these samples may have been enriched in slab-derived fluid/melts. Low-SiO2 glasses from the top of zone 3 (2233-2280 mbsl) are more alkaline, more fractionated, and incompatible-element-enriched relative to other glasses from zone 3. This excursion at the top of zone 3, which is abruptly overlain by more silica-rich tholeiitic magmas, is reminiscent of the end of Mauna Kea shield building higher in the core.

Properties of various silicon oxide phases in thin films

NASA Technical Reports Server (NTRS)

Ritter, E.

1980-01-01

Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

DOE PAGES

Bae, Sungchul; Taylor, Rae; Kilcoyne, David; ...

2017-02-04

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C 3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C 3S hydration was significantly extended, the degree of hydration of C 3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C 3S in the C 3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the puremore » C 3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C 3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C 3S-HVFA system and presented results consistent with previous literature.« less

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

PubMed Central

Bae, Sungchul; Taylor, Rae; Kilcoyne, David; Moon, Juhyuk; Monteiro, Paulo J. M.

2017-01-01

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C3S hydration was significantly extended, the degree of hydration of C3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C3S in the C3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the pure C3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C3S-HVFA system and presented results consistent with previous literature. PMID:28772490

Effects of distraction on magnetoencephalographic responses ascending through C-fibers in humans.

PubMed

Qiu, Yunhai; Inui, Koji; Wang, Xiaohong; Nguyen, Binh Thi; Tran, Tuan Diep; Kakigi, Ryusuke

2004-03-01

Using magnetoencephalography (MEG), we evaluated the cerebral regions relating to second pain perception ascending through C-fibers and investigated the effect of distraction on each region. Thirteen normal subjects participated in this study. CO2 laser pulses were delivered to the dorsum of the left hand to selectively activate C-fibers. The MEG responses were analyzed using a multi-dipole model. (1) primary somatosensory cortex (SI), and (2) secondary somatosensory cortex (SII)--insula were the main generators for the primary component, 1M, whose mean peak latency was 744 ms. In addition to (1) and (2), (3) cingulate cortex and (4) medial temporal area (MT) were also activated for the subsequent component, 2M, whose mean peak latency was 947 ms. During a mental calculation task (Distraction), all 6 sources were significantly reduced in amplitude, but the SII-insula (P < 0.01) and cingulate cortex (P < 0.001) were more sensitive than the SI (P < 0.05) and MT (P < 0.05). We confirmed that SI in the contralateral hemisphere and SII-insula, cingulate cortex and MT in bilateral hemispheres play a major role in second pain perception, and all sites were much affected by a change of attention, indicating that these regions are related to the cognitive aspect of second pain perception. The SI, SII, cingulate and MT were activated during the C-fiber-related MEG response, and responses in these regions were significantly diminished during mental distraction.

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bae, Sungchul; Taylor, Rae; Kilcoyne, David

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C 3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C 3S hydration was significantly extended, the degree of hydration of C 3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C 3S in the C 3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the puremore » C 3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C 3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C 3S-HVFA system and presented results consistent with previous literature.« less

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

DOE PAGES

Santana, Juan A.; Lopez-Dauphin, Nahyr A.; Beiersdorfer, Peter

2018-01-15

Level energies are reported for Si v, Si vi, Si vii, Si viii, Si ix, Si x, Si xi, and Si xii. The energies have been calculated with the relativistic Multi-Reference Møller–Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) online database. The average deviation of valence level energies ranges from 0.20 eV in Si v to 0.04 eV in Si xii. For K-vacancy states, the available values recommendedmore » in the NIST database are limited to Si xii and Si xiii. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate data set presented here greatly augments the amount of available reference level energies. Here, we expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory-generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.« less

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

NASA Astrophysics Data System (ADS)

Santana, Juan A.; Lopez-Dauphin, Nahyr A.; Beiersdorfer, Peter

2018-01-01

Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI, and Si XII. The energies have been calculated with the relativistic Multi-Reference Møller–Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) online database. The average deviation of valence level energies ranges from 0.20 eV in Si V to 0.04 eV in Si XII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate data set presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory-generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santana, Juan A.; Lopez-Dauphin, Nahyr A.; Beiersdorfer, Peter

Level energies are reported for Si v, Si vi, Si vii, Si viii, Si ix, Si x, Si xi, and Si xii. The energies have been calculated with the relativistic Multi-Reference Møller–Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) online database. The average deviation of valence level energies ranges from 0.20 eV in Si v to 0.04 eV in Si xii. For K-vacancy states, the available values recommendedmore » in the NIST database are limited to Si xii and Si xiii. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate data set presented here greatly augments the amount of available reference level energies. Here, we expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory-generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.« less

Kupier prize lecture: Sources of solar-system carbon

NASA Technical Reports Server (NTRS)

Anders, Edward; Zinner, Ernst

1994-01-01

We have tried to deconvolve Solar-System carbon into its sources, on the basis of C-12/C-13 ratios (equivalent to R). Interstellar SiC in meteorites, representing greater than 4.6-Ga-old stardust from carbon stars, is isotopically heavier (bar R = 38 +/- 2) than Solar-System carbon (89), implying that the latter contains an additional, light component. A likely source are massive stars, mainly Type II supernovae and Wolf-Rayet stars, which, being O-rich, eject their C largely as CO rather than carbonaceous dust. The fraction of such light C in the Solar System depends on R(sub light) in the source. For R(sub light) = 180-1025 (as in 'Group 4' meteoritic graphite spherules, which apparently came from massive stars greater than 4.6 Ga ago), the fraction of light C is 0.79-0.61. Similar results are obtained for present-day data on red giants and interstellar gas. Although both have become enriched in C-13 due to galactic evolution (to bar-R = 20 and 57), the fraction of the light component in interstellar gas again is near 0.7. (Here bar R represents the mean of a mixture calculated via atom fractions; it is not identical to the arithmetic mean R). Interstellar graphite, unlike SiC, shows a large peak at R approximately equal 90, near the solar value. Although some of the grains may be of local origin, others show anomalies in other elements and hence are exotic. Microdiamonds, with R = 93, also are exotic on the basis of their Xe and N. Apparently R approximately 90 was a fairly common composition 4.6 Ga ago, of stars as well as the ISM.

Bridged HPSi and Linear HSiP as Probes of the SiP Radical in Astrophysical/Interstellar Media

NASA Astrophysics Data System (ADS)

Fortenberry, Ryan C.; Francisco, Joseph S.

2017-07-01

The SiP radical has a \\tilde{X}{}2{{\\Pi }} ground state and a low-lying A{}2{{{Σ }}}+ state with a transition wavelength of greater than 20 μm. However, this transition has a near-zero oscillator strength making it all but unobservable. Addition of a hydrogen atom to the system creates the strangely bent HPSi molecule and also the linear HSiP isomer, lying 0.50 eV above the bent. The electron-deficient P-Si π cloud in \\tilde{X}{}2{{\\Pi }} SiP is stabilized by the addition of the hydrogen atom, making this isomer the preferred form of HPSi. The HSiP linear isomer can be formed from A{}2{{{Σ }}}+ SiP. As a result, the [HPSi]/[HSiP] ratio could serve as tracer of the otherwise unobservable but low-lying A{}2{{{Σ }}}+≤ftarrow \\tilde{X}{}2{{\\Pi }} electronic transition of SiP. The high-level quantum chemical computations employed here imply that the rotational lines of HPSi and HSiP will overlap extensively, but the vibrational frequencies, especially the hydride stretch, are significantly separated. The hydride stretches are in the 5 μm range, making them excellent candidates for mid-IR observations with the Stratsopheric Observatory for Infrared Astronomy or with the James Webb Space Telescope. Furthermore, the rotational constants and vibrational frequencies of \\tilde{X}{}2{{\\Pi }} SiP, A{}2{{{Σ }}}+ SiP, and \\tilde{X}{}1{{{Σ }}}+ SiP- are also provided in addition to the relative energies of all five species.

Entropy and structure of silicate glasses and melts

USGS Publications Warehouse

Richet, P.; Robie, R.A.; Hemingway, B.S.

1993-01-01

Low-temperature adiabatic Cp measurements have been made on NaAlSi2O6, MgSiO3, Ca3Al2Si3O12 and Ca1.5Mg1.5Al2Si3O12 glasses. Above about 50 K, these and previous data show that the heat capacity is an additive function of composition to within ??1% throughout the investigated glassforming part of the system CaO-MgO-Al2O3-SiO2. In view of the determining role of oxygen coordination polyhedra on the low-temperature entropy, this is interpreted as indicating that Si and Al are tetrahedrally coordinated in all these glasses, in agreement with structural data; whereas Ca and Mg remain octahedrally coordinated. In contrast, heat capacities and entropies are not additive functions of composition for alkali aluminosilicates, indicating increases in the coordination numbers of alkali elements from about six to nine when alumina is introduced. A thermochemical consequence of additivity of vibrational entropies of glasses is that entropies of mixing are essentially configurational for calcium and magnesium aluminosilicate melts. For alkali-bearing liquids, it is probable that vibrational entropies contribute significantly to entropies of mixing. At very low temperatures, the additive nature of the heat capacity with composition is less well followed, likely as a result of specific differences in medium-range order. ?? 1993.

Evaluation of a Silicon 90Sr Betavoltaic Power Source.

PubMed

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90 Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90 Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Evaluation of a Silicon 90Sr Betavoltaic Power Source

PubMed Central

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-01-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles. PMID:27905521

Evaluation of a Silicon 90Sr Betavoltaic Power Source

NASA Astrophysics Data System (ADS)

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

NASA Astrophysics Data System (ADS)

Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

2017-03-01

The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

Fabrication of Coaxial Si1−xGex Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions

PubMed Central

2010-01-01

We report on bifurcate reactions on the surface of well-aligned Si1−xGex nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si1−xGex nanowires were grown in a chemical vapor transport process using SiCl4 gas and Ge powder as a source. After the growth of nanowires, SiCl4 flow was terminated while O2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO2 by the O2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O2 pressure without any intermediate region and enables selectively fabricated Ge/Si1−xGex or SiO2/Si1−xGex coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively. PMID:21076699

Growth characteristics of nanocrystalline silicon films fabricated by using chlorinated precursors at low temperatures.

PubMed

Huang, Rui; Ding, Honglin; Song, Jie; Guo, Yanqing; Wang, Xiang; Lin, Xuanying

2010-11-01

We employed plasma enhanced chemical vapor deposition technique to fabricate nanocrystalline Si films at a low temperature of 250 degrees C by using SiCl4 and H2 as source gases. The evolution of microstructure of the films with deposition periods shows that nanocrystalline Si can be directly grown on amorphous substrate at the initial growth process, which is in contrast to the growth behavior observed in the SiH4/H2 system. Furthermore, it is interesting to find that the area density of nanocrystalline Si as well as grain size can be controlled by modulating the concentration of SiCl4. By decreasing the SiCl4 concentration, the area density of nanocrystalline Si can be enhanced up to 10(11) cm(-2), while the grain size is shown to decrease down to 10 nm. It is suggested that Cl plays an important role in the low-temperature growth of nanocrystalline Si.

Fabrication of Coaxial Si1- x Ge x Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions

NASA Astrophysics Data System (ADS)

Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin

2010-10-01

We report on bifurcate reactions on the surface of well-aligned Si1- x Ge x nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si1- x Ge x nanowires were grown in a chemical vapor transport process using SiCl4 gas and Ge powder as a source. After the growth of nanowires, SiCl4 flow was terminated while O2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO2 by the O2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O2 pressure without any intermediate region and enables selectively fabricated Ge/Si1- x Ge x or SiO2/Si1- x Ge x coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

Fabrication of Coaxial Si(1-x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions.

PubMed

Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin

2010-06-17

We report on bifurcate reactions on the surface of well-aligned Si(1-x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1-x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth of nanowires, SiCl(4) flow was terminated while O(2) gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO(2) by the O(2) gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O(2) pressure without any intermediate region and enables selectively fabricated Ge/Si(1-x)Ge(x) or SiO(2)/Si(1-x)Ge(x) coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

Reduction Behavior of Assmang and Comilog ore in the SiMn Process

NASA Astrophysics Data System (ADS)

Kim, Pyunghwa Peace; Holtan, Joakim; Tangstad, Merete

The reduction behavior of raw materials from Assmang and Comilog based charges were experimentally investigated with CO gas up to 1600 °C. Quartz, HC FeMn slag or limestone were added to Assmang or Comilog according to the SiMn production charge, and mass loss results were obtained by using a TGA furnace. The results showed that particle size, type of manganese ore and mixture have close relationship to the reduction behavior of raw materials during MnO and SiO2 reduction. The influence of particle size to mass loss was apparent when Assmang or Comilog was mixed with only coke (FeMn) while it became insignificant when quartz and HC FeMn slag (SiMn) were added. This implied that quartz and HC FeMn slag had favored the incipient slag formation regardless of particle size. This explained the similar mass loss tendencies of SiMn charge samples between 1200-1500 °C, contrary to FeMn charge samples where different particle sizes showed significant difference in mass loss. Also, while FeMn charge samples showed progressive mass loss, SiMn charge samples showed diminutive mass loss until 1500 °C. However, rapid mass losses were observed with SiMn charge samples in this study above 1500 °C, and they have occurred at different temperatures. This implied rapid reduction of MnO and SiO2 and the type of ore and addition of HC FeMn slag have significant influence determining these temperatures. The temperatures observed for the rapid mass loss were approximately 1503 °C (Quartz and HC FeMn slag addition in Assmang), 1543 °C (Quartz addition in Assmang) and 1580-1587 °C (Quartz and limestone addition in Comilog), respectively. These temperatures also showed indications of possible SiMn production at process temperatures lower than 1550 °C.

The effects of RE and Si on the microstructure and corrosion resistance of Zn-6Al-3Mg hot dip coating

NASA Astrophysics Data System (ADS)

Li, Shiwei; Gao, Bo; Yin, Shaohua; Tu, Ganfeng; Zhu, Guanglin; Sun, Shuchen; Zhu, Xiaoping

2015-12-01

The effects of Si and RE on the microstructure and corrosion resistance of Zn-6Al-3Mg coating (ZAM) have been investigated. Surface morphology observations of the coating and corrosion products reveal that the additions of Si and rare earth metals (RES) improve the microstructural homogeneity of ZAMSR coating and stability of corrosion products formed on ZAMSR coating. Moreover, only uniform corrosion occurs in ZAMSR coating during the corrosion test, while intergranular corrosion and pitting occur in ZAM. As a result, the corrosion resistance of ZAM coating is improved by the additions of Si and RES.

Synthesis and Characterization of MAX Ceramics (MAXCERs)

NASA Astrophysics Data System (ADS)

Nelson, Johnny Carl

This research has focused on the design and development of novel multifunctional MAX reinforced ceramics (MAXCERs). These MAXCERs were manufactured with 1-50 vol% ratios of ceramics to MAX phases. Chapter II reports on the synthesis and tribological behavior of Ti3SiC2 matrix composites by incorporating (1 and 6 vol%) Al2O3, (1 and 5 vol%) BN, and (1 and 5 vol%) B4C ceramic particulate additives in the matrix. All the composites were fabricated by pressureless sintering by using 1 wt% Ni as a sintering agent at 1550 °C for 2 hours. SEM and XRD studies showed that Al2O3 is relatively inert in the Ti3SiC 2 matrix whereas BN and B4C reacted significantly with the Ti3 SiC2 matrix to form TiB2. Detailed tribological studies showed that Ti3SiC2-1wt%Ni (baseline) samples showed dual type tribological behavior where the friction coefficient (micro) was low ( 0.2) during stage 1, thereafter micro increased sharply and transitioned into stage 2 ( 0.8). The addition of Al2O3 as an additive had little effect on the tribological behavior, but the addition of B4C and BN was able to enhance the tribological behavior by increasing the transition distance (TD). Chapter III reports on the synthesis and tribological behavior of TiB2 matrix composites by incorporating (10, 30, and 50 vol%) Ti3SiC2 ceramic particulate additives in the matrix. The fabrication parameters were similar to the Ti3SiC2 samples from Chapter II. There was minimal reaction between the TiB2 and the Ti3SiC2. Detailed tribological studies showed that TiB2 (baseline) and TiB2-10%Ti 3SiC2 samples showed an average micro of 0.29 and 0.28, respectively. TiB2-30%Ti3SiC2 and TiB 2-50%Ti3SiC2 showed dual-type tribological behavior where micro was low ( 0.25) during stage 1, thereafter micro increased gradually and transitioned into stage 2 ( 0.6). Low wear rates were seen for all samples.

Graphene- and aptamer-based electrochemical biosensor

NASA Astrophysics Data System (ADS)

Xu, Ke; Meshik, Xenia; Nichols, Barbara M.; Zakar, Eugene; Dutta, Mitra; Stroscio, Michael A.

2014-05-01

This study investigated the effectiveness of a graphene- and aptamer-based field-effect-transistor-like (FET-like) sensor in detecting lead and potassium ions. The sensor consists of a graphene-covered Si/SiO2 wafer with thrombin binding aptamer (TBA) attached to the graphene layer and terminated by a methylene blue (MB) molecule. K+ and Pb2+ both bind to TBA and cause a conformational change, which results in MB moving closer to the graphene surface and donating an electron. Thus, the abundance of K+ and Pb2+ can be determined by monitoring the current across the source and drain channel. Device transfer curves were obtained with ambipolar field effect observed. Current readings were taken for K+ concentrations of 100 μM to 50 mM and Pb2+ concentrations of 10 μM to 10 mM. As expected, I d decreased as ion concentration increased. In addition, there was a negative shift in V Dirac in response to increased ion concentration.

Hybrid integration of carbon nanotubes in silicon photonic structures

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Effect of sintering temperature variations on fabrication of 45S5 bioactive glass-ceramics using rice husk as a source for silica.

PubMed

Leenakul, Wilaiwan; Tunkasiri, Tawee; Tongsiri, Natee; Pengpat, Kamonpan; Ruangsuriya, Jetsada

2016-04-01

45S5 bioactive glass is a highly bioactive substance that has the ability to promote stem cell differentiation into osteoblasts--the cells that create bone matrix. The aim of this work is to analyze physical and mechanical properties of 45S5 bioactive glass fabricated by using rice husk ash as its silica source. The 45S5 bioactive glass was prepared by melting the batch at 1300 °C for 3h. The samples were sintered at different temperatures ranging from 900 to 1050 °C with a fixed dwell-time of 2h. The phase transitions, density, porosity and microhardness values were investigated and reported. DTA analysis was used to examine the crystallization temperatures of the glasses prepared. We found that the sintering temperature had a significant effect on the mechanical and physical properties of the bioactive glass. The XRD showed that when the sintering temperature was above 650 °C, crystallization occurred and bioactive glass-ceramics with Na2Ca2Si3O9, Na2Ca4(PO4)2SiO4 and Ca3Si2O7 were formed. The optimum sintering temperature resulting in maximum mechanical values was around 1050 °C, with a high density of 2.27 g/cm(3), 16.96% porosity and the vicker microhardness value of 364HV. Additionally, in vitro assay was used to examine biological activities in stimulated body fluid (SBF). After incubation in SBF for 7 days, all of the samples showed formations of apatite layers indicating that the 45S5 bioactive glasses using rice husk as a raw material were also bioactive. Copyright © 2015 Elsevier B.V. All rights reserved.

Precise Perforation and Scalable Production of Si Particles from Low-Grade Sources for High-Performance Lithium Ion Battery Anodes.

PubMed

Zong, Linqi; Jin, Yan; Liu, Chang; Zhu, Bin; Hu, Xiaozhen; Lu, Zhenda; Zhu, Jia

2016-11-09

Alloy anodes, particularly silicon, have been intensively pursued as one of the most promising anode materials for the next generation lithium-ion battery primarily because of high specific capacity (>4000 mAh/g) and elemental abundance. In the past decade, various nanostructures with porosity or void space designs have been demonstrated to be effective to accommodate large volume expansion (∼300%) and to provide stable solid electrolyte interphase (SEI) during electrochemical cycling. However, how to produce these building blocks with precise morphology control at large scale and low cost remains a challenge. In addition, most of nanostructured silicon suffers from poor Coulombic efficiency due to a large surface area and Li ion trapping at the surface coating. Here we demonstrate a unique nanoperforation process, combining modified ball milling, annealing, and acid treating, to produce porous Si with precise and continuous porosity control (from 17% to 70%), directly from low cost metallurgical silicon source (99% purity, ∼ $1/kg). The produced porous Si coated with graphene by simple ball milling can deliver a reversible specific capacity of 1250 mAh/g over 1000 cycles at the rate of 1C, with Coulombic efficiency of first cycle over 89.5%. The porous networks also provide efficient ion and electron pathways and therefore enable excellent rate performance of 880 mAh/g at the rate of 5C. Being able to produce particles with precise porosity control through scalable processes from low-grade materials, it is expected that this nanoperforation may play a role in the next generation lithium ion battery anodes, as well as many other potential applications such as optoelectronics and thermoelectrics.

New technologies for solar energy silicon - Cost analysis of dichlorosilane process

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K.-Y.; Chu, T. C. T.; Fang, C. S.; Lutwack, R.; Briglio, A., Jr.

1981-01-01

A reduction in the cost of silicon for solar cells is an important objective in a project concerned with the reduction of the cost of electricity produced with solar cells. The cost goal for the silicon material is about $14 per kg (1980 dollars). The process which is currently employed to produce semiconductor grade silicon from trichlorosilane is not suited for meeting this cost goal. Other processes for producing silicon are, therefore, being investigated. A description is presented of results obtained for the DCS process which involves the production of dichlorosilane as a silicon source material for solar energy silicon. Major benefits of dichlorosilane as a silicon source material include faster reaction rates for chemical vapor deposition of silicon. The DCS process involves the reaction 2SiHCl3 yields reversibly SiH2Cl2 + SiCl4. The results of a cost analysis indicate a total product cost without profit of $1.29/kg of SiH2Cl2.

A hydrothermal peroxo method for preparation of highly crystalline silica-titania photocatalysts.

PubMed

Krivtsov, Igor; Ilkaeva, Marina; Avdin, Viacheslav; Khainakov, Sergei; Garcìa, Jose R; Ordòñez, Salvador; Dìaz, Eva; Faba, Laura

2015-04-15

A new completely inorganic method of preparation of silica-titania photocatalyst has been described. It has been established that the addition of silica promotes crystallinity of TiO2 anatase phase. Relative crystallinity and TiO2 crystal size in the silica-titania particles increase with the silica content until SiO2/TiO2 molar ratio of 0.9, but at higher molar ratios they start to decrease. The single-source precursor containing peroxo titanic (PTA) and silicic acids has been proved to be responsible for high crystallinity of TiO2 encapsulated into amorphous silica. It has been proposed that peroxo groups enhance rapid formation of crystalline titania seeds, while silica controls their growth. It has been concluded from the TEM that the most morphologically uniform anatase crystallites covered with SiO2 particles are prepared at SiO2/TiO2 molar ratio of 0.4. This sample, according to (29)Si NMR, also shows the high content of hydroxylated silica Q(3) and Q(2) groups, and it is the most photocatalytically active in UV-assisted decomposition of methylene blue among the tested materials. It has been determined that the increase in the amount of the condensed Q(4) silica in the mixed oxides leads to the decrease in photocatalytic performance of the material, despite its better crystallinity. High crystallinity, low degree of incorporation of Ti atoms in SiO2 in the mixed oxide and adsorption of methylene blue in the vicinity of photoactive sites on the hydroxylated silica have been considered as the main factors determining the high degradation degree of methylene blue in the presence of silica-titania. Copyright © 2014 Elsevier Inc. All rights reserved.

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less

Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium

NASA Astrophysics Data System (ADS)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; Macco, Bart; Stradins, Paul; Kessels, W. M. M.; Young, David L.

2018-05-01

The interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 and anneals in forming gas and nitrogen. The poly-Si/SiOx stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiOx contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al2O3 is derived from its role as a hydrogen source for chemically passivating defects at SiOx; Al2O3 layers are found to hydrogenate poly-Si/SiOx much better than a forming gas anneal. By labelling Al2O3 and the subsequent anneal with different hydrogen isotopes, it is found that Al2O3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE PAGES

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; ...

2018-05-14

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less

Tailored Organometallic Polymers

DTIC Science & Technology

1993-01-31

2-4). These synthetic pathways provide access to a wide variety of new silicon compounds for use as reagents in organic syntheses and the electronics...34Si0 2 as a Source of Si Containing Compounds / Polymers", D.J. Ray, R.M. Laine, C. Viney and T.R. Robinson, ACS Polymer Preprints (1991) 32(3), 550...3) as precursors to orgar.osilicon compounds .[10-12] Pentacoordinate silicates are easily prepa’ed frotv tetrasubstituted Si centers containing

Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen

NASA Astrophysics Data System (ADS)

Morimoto, Takashi; Ansari, S. G.; Yoneyama, Koji; Nakajima, Teppei; Masuda, Atsushi; Matsumura, Hideki; Nakamura, Megumi; Umemoto, Hironobu

2006-02-01

The mechanism of catalytic chemical vapor deposition (Cat-CVD) processes for hexamethyldisilazane (HMDS) and trisdimethylaminosilane (TDMAS), which are used as source gases to prepare SiNx or SiCxNy films, was studied using three different mass spectrometric techniques: ionization by Li+ ion attachment, vacuum-ultraviolet radiation and electron impact. The results for HMDS show that Si-N bonds dissociate selectively, although Si-C bonds are weaker, and (CH3)3SiNH should be one of the main precursors of deposited films. This decomposition mechanism did not change when NH3 was introduced, but the decomposition efficiency was slightly increased. Similar results were obtained for TDMAS.

Development in high-grade dual phase steels with low C and Si design

NASA Astrophysics Data System (ADS)

Zhu, Guo-hui; Zhang, Xue-hui; Mao, Wei-min

2009-12-01

Cold rolled dual phase steels with low C and Si addition were investigated in terms of combination of composition and processing in order to improve mechanical properties and workability including welding and galvanizing. Mo and Cr could be used as alloying elements to partially replace C and Si to assure enough hardening ability of the steels and also give solute-hardening. Mo addition is more effective than Cr addition in terms of obtaining the required volume fraction of martensite and mechanical strength. The ferrite grain was effectively refined by addition of Nb microalloying, which gives optimized mechanical properties. The experimental results show that it is possible to obtain the required mechanical properties of high grade 800 MPa dual phase steel, i.e., tensile strength > 780 MPa, elongation > 15%, and yield/tensile strength ratio < 0.6 in the condition of low carbon (C < 0.11 wt.%) and low silicon design (Si < 0.05 wt.%) through adequate combination of composition and processing.

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

NASA Astrophysics Data System (ADS)

Oubensaid, E. H.; Duluard, C. Y.; Pichon, L. E.; Pereira, J.; Boufnichel, M.; Lefaucheux, P.; Dussart, R.; Ranson, P.

2009-07-01

The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min-1. This result is comparable to other reported results. Thereafter, the combination of SiCl4 with SF6 and N2 was tested in order to increase the etch rate. The addition of SF6 in the plasma has enabled us to reach an etch rate of 53 nm min-1. However, best results were obtained with the addition of N2, with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

Temperature effect on betavoltaic microbatteries based on Si and GaAs under 63Ni and 147Pm irradiation

NASA Astrophysics Data System (ADS)

Wang, Hao; Tang, Xiao-bin; Liu, Yun-Peng; Xu, Zhi-Heng; Liu, Min; Chen, Da

2015-09-01

The effect of temperature on the output performance of four different types of betavoltaic microbatteries was investigated experimental and theoretical. Si and GaAs were selected as the energy conversion devices in four types of betavoltaic microbatteries, and 63Ni and 147Pm were used as beta sources. Current density-voltage curves were determined at a temperature range of 213.15-333.15 K. A simplified method was used to calculate the theoretical parameters of the betavoltaic microbatteries considering the energy loss of beta particles for self-absorption of radioactive source, the electron backscatter effect of different types of semiconductor materials, and the absorption of dead layer. Both the experimental and theoretical results show that the short-circuit current density increases slightly and the open-circuit voltage (VOC) decreases evidently with the increase in temperature. Different combinations of energy conversion devices and beta sources cause different effects of temperature on the microbatteries. In the approximately linear range, the VOC sensitivities caused by temperature for 63Ni-Si, 63Ni-GaAs, 147Pm-Si, and 147Pm-GaAs betavoltaic microbatteries were -2.57, -5.30, -2.53, and -4.90 mV/K respectively. Both theoretical and experimental energy conversion efficiency decreased evidently with the increase in temperature.

Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4whiskers

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G. (Inventor)

2001-01-01

A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4 whiskers

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G. (Inventor)

2002-01-01

A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

New insights on pressure, temperature, and chemical stability of CsAlSi5O12, a potential host for nuclear waste

NASA Astrophysics Data System (ADS)

Gatta, G. D.; Brundu, A.; Cappelletti, P.; Cerri, G.; de'Gennaro, B.; Farina, M.; Fumagalli, P.; Guaschino, L.; Lotti, P.; Mercurio, M.

2016-10-01

A Cs-bearing polyphase aggregate with composition (in wt%): 76(1)CsAlSi5O12 + 7(1)CsAlSi2O6 + 17(1)amorphous, was obtained from a clinoptilolite-rich epiclastic rock after a beneficiation process of the starting material (aimed to increase the fraction of zeolite to 90 wt%), cation exchange and then thermal treatment. CsAlSi5O12 is an open-framework compound with CAS topology; CsAlSi2O6 is a pollucite-like material with ANA topology. The thermal stability of this polyphase material was investigated by in situ high- T X-ray powder diffraction, the combined P- T effects by a series of runs with a single-stage piston cylinder apparatus, and its chemical stability following the "availability test" ("AVA test") protocol. A series of additional investigations were performed by WDS-electron microprobe analysis in order to describe the P- T-induced modification of the material texture, and to chemically characterize the starting material and the run products. The "AVA tests" of the polyphase aggregate show an extremely modest release of Cs+: 0.05 mg/g. In response to applied temperature and at room P, CsAlSi5O12 experiences an unquenchable and displacive Ama2-to- Amam phase transition at about 770 K, and the Amam polymorph is stable in its crystalline form up to 1600 K; a crystalline-to-amorphous phase transition occurs between 1600 and 1650 K. In response to the applied P = 0.5 GPa, the crystalline-to-amorphous transition of CsAlSi5O12 occurs between 1670 and 1770 K. This leads to a positive Clapeyron slope (i.e., d P/d T > 0) of the crystalline-to-amorphous transition. When the polyphase aggregate is subjected at P = 0.5 GPa and T > 1770 K, CsAlSi5O12 melts and only CsAlSi2O6 (pollucite-like; dominant) and Cs-rich glass (subordinate) are observed in the quenched sample. Based on its thermo-elastic behavior, P- T phase stability fields, and Cs+ retention capacity, CsAlSi5O12 is a possible candidate for use in the immobilization of radioactive isotopes of Cs, or as potential solid hosts for 137Cs γ-radiation source in sterilization applications. More in general, even the CsAlSi5O12-rich aggregate obtained by a clinoptilolite-rich epiclastic rock appears to be suitable for this type of utilizations.

Aperiodic Mo/Si multilayers for hard x-rays

DOE PAGES

Pardini, Tom; Alameda, Jennifer; Platonov, Yuriy; ...

2016-08-04

In this work we have developed aperiodic Molybdenum/Silicon (Mo/Si) multilayers (MLs) to reflect 16.25 keV photons at a grazing angle of incidence of 0.6° ± 0.05°. To the best of our knowledge this is the first time this material system has been used to fabricate aperiodic MLs for hard x-rays. At these energies new hurdles arise. First of all a large number of bilayers is required to reach saturation. This poses a challenge from the manufacturing point of view, as thickness control of each ML period becomes paramount. The latter is not well defined a priori, due to the thicknessmore » of the interfacial silicide layers which has been observed to vary as a function of Mo and Si thickness. Additionally an amorphous-to-crystalline transition for Mo must be avoided in order maintain reasonably low roughness at the interfaces. This transition is well within the range of thicknesses pertinent to this study. Despite these difficulties our data demonstrates that we achieved reasonably flat ML response across the angular acceptance of ± 0.05°, with an experimentally confirmed average reflectivity of 28%. Such a ML prescription is well suited for applications in the field of hard x-ray imaging of highly diverging sources.« less

Biodegradation test of SPS-LS blends as polymer electrolyte membrane fuel cells

NASA Astrophysics Data System (ADS)

Putri, Zufira; Arcana, I. Made

2014-03-01

Sulfonated polystyrene (SPS) can be applied as a proton exchange membrane fuel cell due to its fairly good chemical stability. In order to be applied as polymer electrolyte membrane fuel cells (PEMFCs), membrane polymer should have a good ionic conductivity, high proton conductivity, and high mechanical strength. Lignosulfonate (LS) is a complex biopolymer which has crosslinks and sulfonate groups. SPS-LS blends with addition of SiO2 are used to increase the proton conductivity and to improve the mechanical properties and thermal stability. However, the biodegradation test of SPS-LS blends is required to determine whether the application of these membranes to be applied as an environmentally friendly membrane. In this study, had been done the synthesis of SPS, biodegradability test of SPS-LS blends with variations of LS and SiO2 compositions. The biodegradation test was carried out in solid medium of Luria Bertani (LB) with an activated sludge used as a source of microorganism at incubation temperature of 37°C. Based on the results obtained indicated that SPS-LS-SiO2 blends are more decomposed by microorganism than SPS-LS blends. This result is supported by analysis of weight reduction percentage, functional groups with Fourier Transform Infrared (FTIR) Spectroscopy, and morphological surface with Scanning Electron Microscopy (SEM).

Comparación del funcionamiento entre PMT y SiPM para la detección de Cherenkov atmosférico en el Complejo Astronómico El Leoncito

NASA Astrophysics Data System (ADS)

Yelós, L. D.; Suarez, F.; García, B.

2017-10-01

Most recent discoveries in gamma ray astronomy with energies around 50 GeV to 30 TeV, were achieved with ground Cherenkov Telescopes, traditionally composed of a parabolic mirror and a single or an array of photo multiplier tubes (PMTs) in their focus. The same detectors (or similar) are used in most astrophysics experiments. Recently, a new detector, the silicon photo-multiplier (SiPM), is progressively replacing the PMTs due to their technical advantages. However some limitations in their functioning make them more complex to use than PMTs and forces their characterization for each project. This work describes the characterization of SiPM from SensL (model MicroFC-SMA-30035) and a PMT from Hamamatsu (model R1463), both detectors are possible options to be used in an array of three Cherenkov telescopes at CASLEO. Additionally, we include the results of the operation of both detectors under controlled laboratory conditions that simulate expected conditions at field. Laboratory test were run in a darkbox with a data acquisition system, a personalized data analyze system with ROOT libraries, temperature control and monitoring, polarization control, a controlled light source, and humidity monitoring.

Characterization of Atomic-Layer-Deposited (ALD) Al2O3-Passivated Sub-50-μm-thick Kerf-less Si Wafers by Controlled Spalling

NASA Astrophysics Data System (ADS)

Lee, Yong Hwan; Cha, Hamchorom; Choi, Sunho; Chang, Hyo Sik; Jang, Boyun; Oh, Jihun

2018-05-01

A systematic characterization of sub-50-μm-thick, kerf-less monocrystalline Si wafers fabricated by a controlled fracture method is presented. The spalling process introduces various defects on the Si surface, which result in high surface roughness levels, residual stress, and low effective minority carrier lifetimes. In addition, metals used to induce fracturing in Si diffuse in the Si at room temperature and degrade the effective minority carrier lifetime. Selective removal of these defected Si regions improves the residual stress and effective lifetimes of spalled Si wafers.

Processing and testing of high toughness silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Tikare, Veena; Sanders, William A.; Choi, Sung R.

1993-01-01

High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.

Thermal Synthesis of Perchlorinated Oligosilanes: A Fresh Look at an Old Reaction.

PubMed

Neumeyer, Felix; Schweizer, Julia I; Meyer, Lioba; Sturm, Alexander G; Nadj, Andor; Holthausen, Max C; Auner, Norbert

2017-09-07

A combined experimental and theoretical study of the high-temperature reaction of SiCl 4 and elemental silicon is presented. The nature and reactivity of the product formed upon rapid cooling of the gaseous reaction mixture is investigated by comparison with the defined model compounds cyclo-Si 5 Cl 10 , n-Si 5 Cl 12 and n-Si 4 Cl 10 . A DFT assessment provides mechanistic insight into the oligosilane formation. Experimental 29 Si NMR investigations, supported by quantum-chemical 29 Si NMR calculations, consistently show that the reaction product is composed of discrete molecular perchlorinated oligosilanes. Low-temperature chlorination is an unexpectedly selective means for the transformation of cyclosilanes to acyclic species by endocyclic Si-Si bond cleavage, and we provide a mechanistic rationalization for this observation. In contrast to the raw material, the product obtained after low-temperature chlorination represents an efficient source of neo-Si 5 Cl 12 or the amine-stabilized disilene EtMe 2 N⋅SiCl 2 Si(SiCl 3 ) 2 through reaction with aliphatic amines. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

Bose-Einstein correlations in Si + Al and Si + Au collisions at 14.6A GeV/c

NASA Technical Reports Server (NTRS)

Abbott, T.; Akiba, Y.; Beavis, D.; Bloomer, M. A.; Bond, P. D.; Chasman, C.; Chen, Z.; Chu, Y. Y.; Cole, B. A.; Costales, J. B.

1992-01-01

The E802 Spectrometer at the Brookhaven Alternating Gradient Synchrotron has been used to measure the correlation in relative momentum between like-sign pions emitted in central Si + Al and Si + Au collisions at 14.6A GeV/c. Data are presented in terms of the correlation function for both identified pi(-) and pi(+) pairs near the nucleon-nucleon center-of-mass rapidity. All parametrizations of the correlation function are consistent with a spherically symmetric source of rms radius 3.5 +/- 0.4 fm and lifetime fm/c.

A-few-second synthesis of silicon nanoparticles by gas-evaporation and their self-supporting electrodes based on carbon nanotube matrix for lithium secondary battery anodes

NASA Astrophysics Data System (ADS)

Kowase, Takayuki; Hori, Keisuke; Hasegawa, Kei; Momma, Toshiyuki; Noda, Suguru

2017-09-01

Rapid gas-evaporation method is proposed and developed, which yields Si nanoparticles (SiNPs) in a few seconds at high yields of 20%-60% from inexpensive and safe bulk Si. Such rapid process is realized by heating the Si source to a temperature ≥2000 °C, much higher than the melting point of Si (1414 °C). The size of SiNPs is controlled at tens to hundreds nanometers simply by the Ar gas pressure during the evaporation process. Self-supporting films are fabricated simply by co-dispersion and filtration of the SiNPs and carbon nanotubes (CNTs) without using binders nor metal foils. The half-cell tests showed the improved performances of the SiNP-CNT composite films as anode when coated with graphitic carbon layer. Their performances are evaluated with various SiNP sizes and Si/CNT ratios systematically. The SiNP-CNT film with a Si/CNT mass ratio of 4 realizes the balanced film-based capacities of 618 mAh/gfilm, 230 mAh/cm3, and 0.644 mAh/cm2 with a moderate Si-based performance of 863 mAh/gSi at the 100th cycle.

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Thermal Atomic Layer Etching of SiO2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

PubMed

DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M

2017-03-22

The thermal atomic layer etching (ALE) of SiO 2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ X-ray reflectivity (XRR) measurements revealed that the etch rate during SiO 2 ALE was dependent on reactant pressure. SiO 2 etch rates of 0.027, 0.15, 0.20, and 0.31 Å/cycle were observed at static reactant pressures of 0.1, 0.5, 1.0, and 4.0 Torr, respectively. Ex situ spectroscopic ellipsometry (SE) measurements were in agreement with these etch rates versus reactant pressure. In situ Fourier transform infrared (FTIR) spectroscopy investigations also observed SiO 2 etching that was dependent on the static reactant pressures. The FTIR studies showed that the TMA and HF reactions displayed self-limiting behavior at the various reactant pressures. In addition, the FTIR spectra revealed that an Al 2 O 3 /aluminosilicate intermediate was present after the TMA exposures. The Al 2 O 3 /aluminosilicate intermediate is consistent with a "conversion-etch" mechanism where SiO 2 is converted by TMA to Al 2 O 3 , aluminosilicates, and reduced silicon species following a family of reactions represented by 3SiO 2 + 4Al(CH 3 ) 3 → 2Al 2 O 3 + 3Si(CH 3 ) 4 . Ex situ X-ray photoelectron spectroscopy (XPS) studies confirmed the reduction of silicon species after TMA exposures. Following the conversion reactions, HF can fluorinate the Al 2 O 3 and aluminosilicates to species such as AlF 3 and SiO x F y . Subsequently, TMA can remove the AlF 3 and SiO x F y species by ligand-exchange transmetalation reactions and then convert additional SiO 2 to Al 2 O 3 . The pressure-dependent conversion reaction of SiO 2 to Al 2 O 3 and aluminosilicates by TMA is critical for thermal SiO 2 ALE. The "conversion-etch" mechanism may also provide pathways for additional materials to be etched using thermal ALE.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2018-01-01

We develop a 2D analytical subthreshold model for nanoscale double-gate junctionless transistors (DGJLTs) with gate-source/drain underlap. The model is validated using well-calibrated TCAD simulation deck obtained by comparing experimental data in the literature. To analyze and control short-channel effects, we calculate the threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing of DGJLTs using our model and compare them with corresponding simulation value at channel length of 20 nm with channel thickness tSi ranging 5-10 nm, gate-source/drain underlap (LSD) values 0-7 nm and source/drain doping concentrations (NSD) ranging 5-12 × 1018 cm-3. As tSi reduces from 10 to 5 nm DIBL drops down from 42.5 to 0.42 mV/V at NSD = 1019 cm-3 and LSD = 5 nm in contrast to decrement from 71 to 4.57 mV/V without underlap. For a lower tSiDIBL increases marginally with increasing NSD. The subthreshold swing reduces more rapidly with thinning of channel thickness rather than increasing LSD or decreasing NSD.

Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

PubMed

Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

2015-02-27

Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

NASA Astrophysics Data System (ADS)

Kao, Wei-Chieh

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

Alloying and Properties of C14–NbCr2 and A15–Nb3X (X = Al, Ge, Si, Sn) in Nb–Silicide-Based Alloys

PubMed Central

Tsakiropoulos, Panos

2018-01-01

The oxidation of Nb–silicide-based alloys is improved with Al, Cr, Ge or Sn addition(s). Depending on addition(s) and its(their) concentration(s), alloyed C14-AB2 Laves and A15-A3X phases can be stable in the microstructures of the alloys. In both phases, A is the transition metal(s), and B and X respectively can be Cr, Al, Ge, Si or Sn, and Al, Ge, Si or Sn. The alloying, creep and hardness of these phases were studied using the composition weighted differences in electronegativity (∆χ), average valence electron concentrations (VEC) and atomic sizes. For the Laves phase (i) the VEC and ∆χ were in the ranges 4.976 < VEC < 5.358 and −0.503 < ∆χ < −0.107; (ii) the concentration of B (=Al + Cr + Ge + Si + Sn) varied from 50.9 to 64.5 at %; and (iii) the Cr concentration was in the range of 35.8 < Cr < 51.6 at %. Maps of ∆χ versus Cr, ∆χ versus VEC, and VEC versus atomic size separated the alloying behaviours of the elements. Compared with unalloyed NbCr2, the VEC decreased and ∆χ increased in Nb(Cr,Si)2, and the changes in both parameters increased when Nb was substituted by Ti, and Cr by Si and Al, or Si and Ge, or Si and Sn. For the A15 phase (i) the VEC and ∆χ were in the ranges 4.38 < VEC < 4.89 and 0.857 < ∆χ < 1.04, with no VEC values between 4.63 and 4.72 and (ii) the concentration of X (=Al + Ge + Si + Sn) varied from 16.3 to 22.7 at %. The VEC versus ∆χ map separated the alloying behaviours of elements. The hardness of A15-Nb3X was correlated with the parameters ∆χ and VEC. The hardness increased with increases in ∆χ and VEC. Compared with Nb3Sn, the ∆χ and hardness of Nb3(Si,Sn) increased. The substitution of Nb by Cr had the same effect on ∆χ and hardness as Hf or Ti. The ∆χ and hardness increased with Ti concentration. The addition of Al in Nb3(Si,Sn,Al) decreased the ∆χ and increased the hardness. When Ti and Hf, or Ti, Hf and Cr, were simultaneously present with Al, the ∆χ was decreased and the hardness was unchanged. The better creep of Nb(Cr,Si)2 compared with the unalloyed Laves phase was related to the decrease in the VEC and ∆χ parameters. PMID:29518920

Alloying and Properties of C14-NbCr₂ and A15-Nb₃X (X = Al, Ge, Si, Sn) in Nb-Silicide-Based Alloys.

PubMed

Tsakiropoulos, Panos

2018-03-07

The oxidation of Nb-silicide-based alloys is improved with Al, Cr, Ge or Sn addition(s). Depending on addition(s) and its(their) concentration(s), alloyed C14-AB₂ Laves and A15-A₃X phases can be stable in the microstructures of the alloys. In both phases, A is the transition metal(s), and B and X respectively can be Cr, Al, Ge, Si or Sn, and Al, Ge, Si or Sn. The alloying, creep and hardness of these phases were studied using the composition weighted differences in electronegativity (∆χ), average valence electron concentrations (VEC) and atomic sizes. For the Laves phase (i) the VEC and ∆χ were in the ranges 4.976 < VEC < 5.358 and -0.503 < ∆χ < -0.107; (ii) the concentration of B (=Al + Cr + Ge + Si + Sn) varied from 50.9 to 64.5 at %; and (iii) the Cr concentration was in the range of 35.8 < Cr < 51.6 at %. Maps of ∆χ versus Cr, ∆χ versus VEC, and VEC versus atomic size separated the alloying behaviours of the elements. Compared with unalloyed NbCr₂, the VEC decreased and ∆χ increased in Nb(Cr,Si)₂, and the changes in both parameters increased when Nb was substituted by Ti, and Cr by Si and Al, or Si and Ge, or Si and Sn. For the A15 phase (i) the VEC and ∆χ were in the ranges 4.38 < VEC < 4.89 and 0.857 < ∆χ < 1.04, with no VEC values between 4.63 and 4.72 and (ii) the concentration of X (=Al + Ge + Si + Sn) varied from 16.3 to 22.7 at %. The VEC versus ∆χ map separated the alloying behaviours of elements. The hardness of A15-Nb₃X was correlated with the parameters ∆χ and VEC. The hardness increased with increases in ∆χ and VEC. Compared with Nb₃Sn, the ∆χ and hardness of Nb₃(Si,Sn) increased. The substitution of Nb by Cr had the same effect on ∆χ and hardness as Hf or Ti. The ∆χ and hardness increased with Ti concentration. The addition of Al in Nb₃(Si,Sn,Al) decreased the ∆χ and increased the hardness. When Ti and Hf, or Ti, Hf and Cr, were simultaneously present with Al, the ∆χ was decreased and the hardness was unchanged. The better creep of Nb(Cr,Si)₂ compared with the unalloyed Laves phase was related to the decrease in the VEC and ∆χ parameters.

Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

NASA Astrophysics Data System (ADS)

Ebrahimpour, Omid

In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC particles and alumina nano powders were mixed in alumina sol to adjust the alumina weight to 35 wt%. Then, the desired amount of catalyst, which depends on the total surface area of the particles, was grafted onto the surface of the powders under an inert atmosphere. Consequently, the polymerization started from the surface of the substrate. The treated powders were characterized by SEM, XPS and TGA. In addition, the amount of pore-former was determined by TGA analysis. Porous SiC ceramics, which were fabricated by the novel process, consist of mullite, SiC, cristobalite and a small amount of alumina and TiO 2 as a result of reaction of TiCl4 with air. Furthermore, the effect of the sintering temperatures (1500°C, 1550°C and 1600°C) on the crystalline structure of the porous samples was investigated. Furthermore, it was proposed that converting TiCl4 to TiO2 acted as the sintering additive to form mullite at a lower sintering temperature. (Abstract shortened by UMI.).

Effect of Si on Fe-rich intermetallic formation and mechanical properties of heat-treated Al–Cu–Mn–Fe alloys

NASA Astrophysics Data System (ADS)

Zhao, Yuliang; Zhang, Weiwen; Yang, Chao; Zhang, Datong; Wang, Zhi

2018-04-01

The effect of Si on Fe-rich intermetallics formation and mechanical properties of heat-treated squeeze cast Al-5.0Cu-0.6Mn-0.7Fe alloy was investigated. Our results show that increasing Si content promotes the formation of Al15(FeMn)3(SiCu)2 (${\\alpha}$-Fe), and varying the morphology of T (Al20Cu3Mn2) where the size decreases and the amount increases. The major reason is that Si promotes heterogeneous nucleation of the intermetallics leading to finer precipitates. Si addition significantly enhances ultimate tensile strength and yield strength of the alloys. The strengthening effect is mainly owing to the dispersoid strengthening by increasing volume fraction of T phase and less harmful ${\\alpha}$-Fe with a compact structure, which make the cracks more difficult to initiate and propagation during tensile test. The squeeze cast Al-5.0Cu-0.6Mn-0.7Fe alloy with 1.1% Si shows significantly improved mechanical properties than the alloy without Si addition, which has tensile strength of 386 MPa, yield strength of 280 MPa and elongation of 8.6%.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

PubMed

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-11-04

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

NASA Astrophysics Data System (ADS)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Cold spraying SiC/Al metal matrix composites: effects of SiC contents and heat treatment on microstructure, thermophysical and flexural properties

NASA Astrophysics Data System (ADS)

Gyansah, L.; Tariq, N. H.; Tang, J. R.; Qiu, X.; Feng, B.; Huang, J.; Du, H.; Wang, J. Q.; Xiong, T. Y.

2018-02-01

In this paper, cold spray was used as an additive manufacturing method to fabricate 5 mm thick SiC/Al metal matrix composites with various SiC contents. The effects of SiC contents and heat treatment on the microstructure, thermophysical and flexural properties were investigated. Additionally, the composites were characterized for retention of SiC particulates, splat size, surface roughness and the progressive understanding of strengthening, toughening and cracking mechanisms. Mechanical properties were investigated via three-point bending test, thermophysical analysis, and hardness test. In the as-sprayed state, flexural strength increased from 95.3 MPa to 133.5 MPa, an appreciation of 40% as the SiC contents increased, and the main toughening and strengthening mechanisms were zigzag crack propagation and high retention of SiC particulates respectively. In the heat treatment conditions, flexural strength appreciated significantly compared to the as-sprayed condition and this was as a result of coarsening of pure Al splat. Crack branching, crack deflection and interface delamination were considered as the main toughening mechanisms at the heat treatment conditions. Experimental results were consistent with the measured CTE, hardness, porosity and flexural modulus.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

PubMed Central

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-01-01

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes on silicon for mid-infrared photonic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, J. D.; Xu, C.; Menéndez, J.

This paper reports initial the demonstration of prototype Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge{sub 1−x−y}Si{sub x}Sn{sub y}/p-Ge(Sn/Si)] using ultra low-temperature (T < 300 °C) depositions of the highly reactive chemical sources Si{sub 4}H{sub 10}, Ge{sub 4}H{sub 10}, Ge{sub 3}H{sub 8}, and SnD{sub 4}. The Sn content in the i-Ge{sub 1−x−y}Si{sub x}Sn{sub y} layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigatemore » the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge{sub 1−y}Sn{sub y} counterparts. These findings-combined with the enhanced thermal stability of Ge{sub 1−x−y}Si{sub x}Sn{sub y} relative to Ge{sub 1−y}Sn{sub y} and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge{sub 1−x−y}Si{sub x}Sn{sub y} may represent a practical target system for future generations of group-IV light sources on Si.« less

AES and LEED study of the zinc blende SiC(100) surface

NASA Technical Reports Server (NTRS)

Dayan, M.

1985-01-01

Auger and LEED measurements have been carried out on the (100) surface of zinc blende SiC. Two different phases of the clean surface, in addition to two kinds of oxygen-covered surfaces, have been obtained, identified, and discussed. In the oxygen-covered surface, the oxygen is bonded to the Si. The carbon-rich phase is reconstructed (2 x 1), similar to the (100) clean surfaces of Si, Ge, and diamond. The Si-topped surface is reconstructed. A model of alternating Si dimers is suggested for this surface.

Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods

NASA Astrophysics Data System (ADS)

Benedetti, A.; Norris, D. J.; Hetherington, C. J. D.; Cullis, A. G.; Robbins, D. J.; Wallis, D. J.

2003-04-01

SiGe/Si multiple quantum wells, nominally 4 nm thick, were grown by low pressure chemical vapor deposition and the Ge distribution within the wells was studied using a variety of transmission electron microscope-based techniques. Energy-dispersive x-ray spectroscopy and electron energy-loss imaging were used to directly measure the Ge compositional profile across the SiGe wells. In addition, the average Ge concentration was deduced indirectly from measurement of the strain-induced lattice displacements in high resolution images, obtained from the relative phase shift of the Si lattice planes on either side of a SiGe well. The results from both the direct and indirect measurement techniques were compared and found to be in good agreement with one another. The Ge profiles exhibited an asymmetric shape consistent with the occurrence of Ge segregation during growth. However, the amplitude of the asymmetry indicated that an additional factor, in particular gas dwell times within the reactor, also needed to be taken into account. Based upon this approach, a successful theoretical model of the growth process was derived.

Influence of Li₂Sb Additions on Microstructure and Mechanical Properties of Al-20Mg₂Si Alloy.

PubMed

Yu, Hong-Chen; Wang, Hui-Yuan; Chen, Lei; Zha, Min; Wang, Cheng; Li, Chao; Jiang, Qi-Chuan

2016-03-29

It is found that Li₂Sb compound can act as the nucleus of primary Mg₂Si during solidification, by which the particle size of primary Mg₂Si decreased from ~300 to ~15-25 μm. Owing to the synergistic effect of the Li₂Sb nucleus and adsorption-poisoning of Li atoms, the effect of complex modification of Li-Sb on primary Mg₂Si was better than that of single modification of Li or Sb. When Li-Sb content increased from 0 to 0.2 and further to 0.5 wt.%, coarse dendrite changed to defective truncated octahedron and finally to perfect truncated octahedral shape. With the addition of Li and Sb, ultimate compression strength (UCS) of Al-20Mg₂Si alloys increased from ~283 to ~341 MPa and the yield strength (YS) at 0.2% offset increased from ~112 to ~179 MPa while almost no change was seen in the uniform elongation. Our study offers a simple method to control the morphology and size of primary Mg₂Si, which will inspire developing new Al-Mg-Si alloys with improved mechanical properties.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

PubMed

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Strong, Tough, and Pest Resistant MoSi2-Base Hybrid Composite for Structural Applications

NASA Technical Reports Server (NTRS)

Hebsur, M. G.; Nathal, M. V.

1997-01-01

Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix composites as a replacement for Ni-base superalloys in aircraft engine applications.

Sustainable intensification: a multifaceted, systemic approach to international development.

PubMed

Himmelstein, Jennifer; Ares, Adrian; van Houweling, Emily

2016-12-01

Sustainable intensification (SI) is a term increasingly used to describe a type of approach applied to international agricultural projects. Despite its widespread use, there is still little understanding or knowledge of the various facets of this composite paradigm. A review of the literature has led to the formalization of three principles that convey the current characterization of SI, comprising a whole system, participatory, agroecological approach. Specific examples of potential bottlenecks to the SI approach are cited, in addition to various technologies and techniques that can be applied to overcome these obstacles. Models of similar, succcessful approaches to agricultural development are examined, along with higher level processes. Additionally, this review explores the desired end points of SI and argues for the inclusion of gender and nutrition throughout the process. To properly apply the SI approach, its various aspects need to be understood and adapted to different cultural and geographic situations. New modeling systems and examples of the effective execution of SI strategies can assist with the successful application of the SI paradigm within complex developing communities. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

MoSi2-Base Hybrid Composites from Aeroengine Applications

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G.

2000-01-01

Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved low temperature accelerated oxidation resistance by forming a Si2ON2 protective scale and thereby eliminated catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness, and significantly lowered the CTE of the MoSi2 which eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited this excellent strength and toughness improvement up to 1673 K. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites due to improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. These hybrid composites remain competitive with ceramic matrix composites as a replacement for Ni-base superalloys in aircraft engine applications.

Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised $${\\rm Si}_{0.55}{\\rm Ge}_{0.45}$$ Source/Drain

DOE PAGES

Wang, Liang; Zhang, En Xia; Schrimpf, Ronald D.; ...

2015-12-17

Here, the total ionizing dose response of Ge channel pFETs with raised Si 0.55Ge 0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1985-01-01

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Efficiency analysis of betavoltaic elements

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Shkrebtii, A. I.; Korkishko, R. M.; Kostylyov, V. P.; Kulish, M. R.; Sokolovskyi, I. O.

2015-09-01

The conversion of energy of electrons produced by a radioactive β-source into electricity in a Si and SiC p- n junctions is modeled. The features of the generation function that describes the electron-hole pair production by an electron flux and the emergence of a "dead layer" are discussed. The collection efficiency Q that describes the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the dead layer. It is shown that in the case of high-grade Si p- n junctions, the collection efficiency of electron-hole pairs created by a high-energy electrons flux (such as, e.g., Pm-147 beta flux) is close or equal to unity in a wide range of electron energies. For SiC p-n junctions, Q is near unity only for electrons with relatively low energies of about 5 keV (produced, e.g., by a tritium source) and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the dead layer on the collection efficiency is negligible, are determined. The open-circuit voltage is calculated for realistic values of the minority carriers' diffusion coefficients and lifetimes in Si and SiC p- n junctions, irradiated by a high-energy electrons flux. Our calculations allow to estimate the attainable efficiency of betavoltaic elements.

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Consolidation of silicon nitride without additives

NASA Technical Reports Server (NTRS)

Sikora, P. F.; Yeh, H. C.

1977-01-01

The feasibility of producing a sound, dense Si3N4 body without additives was explored, using conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. These two techniques produce much higher pressure 275-413 MN/m sq (40,000 - 60,000 psi) than hot-pressing techniques. Evaluation was based on density measurement, microscopic examination, both optical and electron, and X-ray diffraction analysis. The results are summarized as follows: (1) Si3N4 can be densified to high density, greater than 95% of theoretical, without additions. (2) The higher density Si3N4 specimens appear to be associated with a greater amount of alpha to beta transformation. (3) Under high pressure, the alpha to beta transformation can occur at a temperature as low as 1150 C. (4) Grain deformation and subsequent recrystallization and grain refinement result from hot isostatic pressing of Si3N4.

Adsorption and dynamics of Si atoms at the monolayer Pb/Si(111) surface

NASA Astrophysics Data System (ADS)

Kumar, Rakesh; Fang, Chuang-Kai; Lee, Chih-Hao; Hwang, Ing-Shouh

2017-06-01

In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125 to 230 K using a variable-temperature scanning tunneling microscope. The Pb-covered Si(111) surface forms a low-symmetry rowlike (√{7 }×√{3 } ) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1 A and T1 B) on the trimer row after deposition at the sample temperature of ˜125 K . The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1 A and T1 B sites within the same trimer when the temperature was raised to ˜150 K . When the temperature was raised above ˜160 K , the adsorbed Si atoms could hop to other trimers along the same trimer row. Below ˜170 K , short hops to adjacent trimers dominated, but long hops dominated at temperatures above ˜170 K . The activation energy and prefactor for the Si atoms diffusion were derived through analysis of continuous-time imaging at temperatures from 160 to 174 K. In addition, irreversible aggregation of single Si atoms into Si clusters started to occur at the phase boundaries or defective sites at temperatures above ˜170 K . At temperature above ˜180 K , nearly all Si atoms aggregated into clusters, which may have important implications for the atomic mechanism of epitaxial growth of Si on the Pb-covered Si(111) surface. In addition, our study provides strong evidence for breaking in the mirror symmetry in the (√{7 }×√{3 } )-Pb structure, which has implications for the atomic model of this controversial structure.

Alternative uses of a megavolt tandem accelerator for few-keV studies with ion-source SIMS monitoring.

PubMed

Mello, S L A; Codeço, C F S; Magnani, B F; Sant'Anna, M M

2016-06-01

We increase the versatility of a tandem electrostatic accelerator by implementing simple modifications to the standard operation procedure. While keeping its ability to deliver MeV ion beams, we show that the experimental setup can (i) provide good quality ion beams in the few-keV energy range and (ii) be used to study ion-beam surface modification with simultaneous secondary ion mass spectrometry. This latter task is accomplished without using any chamber connected to the accelerator exit. We perform mass spectrometry of the few-keV anions produced in the ion source by measuring their neutral counterparts at the accelerator exit with energies up to 1.7 MeV. With an additional modification, a high-current few-keV regime is obtained, using the ion source as an irradiation chamber and the accelerator itself only as a mass spectrometer. As an example of application, we prepare a sample for the study of ion-beam assisted dewetting of a thin Au film on a Si substrate.

Alternative uses of a megavolt tandem accelerator for few-keV studies with ion-source SIMS monitoring

NASA Astrophysics Data System (ADS)

Mello, S. L. A.; Codeço, C. F. S.; Magnani, B. F.; Sant'Anna, M. M.

2016-06-01

We increase the versatility of a tandem electrostatic accelerator by implementing simple modifications to the standard operation procedure. While keeping its ability to deliver MeV ion beams, we show that the experimental setup can (i) provide good quality ion beams in the few-keV energy range and (ii) be used to study ion-beam surface modification with simultaneous secondary ion mass spectrometry. This latter task is accomplished without using any chamber connected to the accelerator exit. We perform mass spectrometry of the few-keV anions produced in the ion source by measuring their neutral counterparts at the accelerator exit with energies up to 1.7 MeV. With an additional modification, a high-current few-keV regime is obtained, using the ion source as an irradiation chamber and the accelerator itself only as a mass spectrometer. As an example of application, we prepare a sample for the study of ion-beam assisted dewetting of a thin Au film on a Si substrate.

Geochemical fingerprinting of Wilson Creek formation tephra layers (Mono Basin, California) using titanomagnetite compositions

USGS Publications Warehouse

Marcaida, Mae; Mangan, Margaret T.; Vazquez, Jorge A.; Bursik, Marcus; Lidzbarski, Marsha I.

2014-01-01

Nineteen tephra layers within the Wilson Creek formation near Mono Lake provide a record of late Pleistocene to early Holocene volcanic activity from the nearby Mono Craters and are important chronostratigraphic markers for paleomagnetic, paleoclimatic, and paleoecologic studies. These stratigraphically important tephra deposits can be geochemically identified using compositions of their titanomagnetite phenocrysts. Titanomagnetite compositions display a broad range (XUsp 0.26–0.39), which allow the tephra layers to be distinguished despite the indistinguishable major-element glass compositions (76–77 wt% SiO2) of their hosts. The concentrations of Ti and Fe in titanomagnetite display geochemical and stratigraphic groupings that allow clear discrimination between older (> 57 ka) and younger (2O3 contents. In addition, a few tephra layers can be correlated to their source vents by their titanomagnetite compositions. The unique geochemical fingerprint of the Mono Craters-sourced titanomagnetites also allows the discrimination of two tephra layers apparently sourced from nearby Mammoth Mountain volcano in Long Valley.

Silicon Isotope Geochemistry of Ocean Island Basalts: Mantle Heterogeneities and Contribution of Recycled Oceanic Crust and Lithosphere

NASA Astrophysics Data System (ADS)

Pringle, E. A.; Moynier, F.; Savage, P. S.; Jackson, M. G.; Moreira, M. A.; Day, J. M.

2015-12-01

The study of Silicon (Si) isotopes in Ocean Island Basalts (OIB) has the potential to elucidate between possible heterogeneities in the mantle. Relatively large (~several per mil per atomic mass unit) Si isotope fractionation occurs in low-temperature environments during biochemical and geochemical precipitation of dissolved Si, where the precipitate is preferentially enriched in the lighter isotopes [1]. In contrast, only a limited range (~tenths of a per mil) of Si isotope fractionation has been observed in high-temperature igneous processes [2]. Therefore, Si isotopes may be useful as tracers for the presence of crustal material (derived from low-temperature surface processes) in OIB source regions in a manner similar to more conventional stable isotope systems, such as O. Here we present the first comprehensive set of high-precision Si isotope data obtained by MC-ICP-MS for a diverse suite of OIBs, including new data for the Canary Islands. Samples represent the Pacific, Atlantic, and Indian Ocean basins and include representative end-members for the EM-1, EM-2, and HIMU mantle components. Average δ30Si values for OIBs representing the EM-1 (-0.32 ± 0.06‰, 2 sd), EM-2 (-0.30 ± 0.01‰, 2 sd), and HIMU (-0.34 ± 0.09‰, 2 sd) mantle components are all in general agreement with previous estimates for the δ30Si value of Bulk Silicate Earth [3]. However, small systematic variations are present; HIMU (Mangaia, Cape Verde, La Palma) and Iceland OIBs are enriched in the lighter isotopes of Si (δ30Si values lower than MORB). Further, the difference in Si isotope composition between La Palma and El Heirro (Canary Islands) has previously been observed for O isotopes [4], suggesting a relationship between the Si and O isotope mantle systematics. The Si isotope variations among OIBs may be explained by the sampling of a primitive mantle reservoir enriched in the light isotopes of Si, as suggested by [5], but most likely reflects the incorporation of recycled altered oceanic crust and lithosphere in the plume source. References: [1] Ziegler et al., GCA 2005 [2] Savage et al., GCA 2011 [3] Savage et al., EPSL 2010 [4] Day et al., Geology 2009 [5] Huang et al., GCA 2014

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

NASA Astrophysics Data System (ADS)

Ong, Wei Jie; Tok, Eng Soon

2012-07-01

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered "1 × 1" to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 Ǻ similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between "disordered 1 × 1" and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.

Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

NASA Astrophysics Data System (ADS)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

From Si wafers to cheap and efficient Si electrodes for Li-ion batteries

NASA Astrophysics Data System (ADS)

Gauthier, Magali; Reyter, David; Mazouzi, Driss; Moreau, Philippe; Guyomard, Dominique; Lestriez, Bernard; Roué, Lionel

2014-06-01

High-energy ball milling is used to recycle Si wafers to produce Si powders for negative electrodes of Li-ion batteries. The resulting Si powder consists in micrometric Si agglomerates made of cold-welded submicrometric nanocrystalline Si particles. Silicon-based composite electrodes prepared with ball-milled Si wafer can achieve more than 900 cycles with a capacity of 1200 mAh g-1 of Si (880 mAh g-1 of electrode) and a coulombic efficiency higher than 99%. This excellent electrochemical performance lies in the use of nanostructured Si produced by ball milling, the electrode formulation in a pH 3 buffer solution with CMC as binder and the use of FEC/VC additives in the electrolyte. This work opens the way to an economically attractive recycling of Si wastes.

Grain Refinement of Al-Si Hypoeutectic Alloys by Al3Ti1B Master Alloy and Ultrasonic Treatment

NASA Astrophysics Data System (ADS)

Wang, Gui; Wang, Eric Qiang; Prasad, Arvind; Dargusch, Matthew; StJohn, David H.

Al-Si alloys are widely used in automotive and aerospace industries due to their excellent castability, high strength to weight ratio and good corrosion resistance. However, Si poisoning severely limits the degree of grain refinement with the grain size becoming larger as the Si content increases. Generally the effect of Si poisoning is reduced by increasing the amount of master alloy added to the melt during casting. However, an alternative approach is physical grain refinement through the application of an external force (e.g. mechanical or electromagnetic stirring, intensive shearing and ultrasonic irradiation). This work compares the grain refining efficiency of three approaches to the grain refinement of a range of hypoeutectic Al-Si alloys by (i) the addition of A13Ti1B master alloy, (ii) the application of Ultrasonic Treatment (UT) and (iii) the combined addition of A13Ti1B master alloy and the application of UT.

Effect of Thermal and Chemical Treatment on the Microstructural, Mechanical and Machining Performance of W319 Al-Si-Cu Cast Alloy Engine Blocks and Directionally Solidified Machinability Test Blocks

NASA Astrophysics Data System (ADS)

Szablewski, Daniel

The research presented in this work is focused on making a link between casting microstructural, mechanical and machining properties for 319 Al-Si sand cast components. In order to achieve this, a unique Machinability Test Block (MTB) is designed to simulate the Nemak V6 Al-Si engine block solidification behavior. This MTB is then utilized to cast structures with in-situ nano-alumina particle master alloy additions that are Mg based, as well as independent in-situ Mg additions, and Sr additions to the MTB. The Universal Metallurgical Simulator and Analyzer (UMSA) Technology Platform is utilized for characterization of each cast structure at different Secondary Dendrite Arm Spacing (SDAS) levels. The rapid quench method and Jominy testing is used to assess the capability of the nano-alumina master alloy to modify the microstructure at different SDAS levels. Mechanical property assessment of the MTB is done at different SDAS levels on cast structures with master alloy additions described above. Weibull and Quality Index statistical analysis tools are then utilized to assess the mechanical properties. The MTB is also used to study single pass high speed face milling and bi-metallic cutting operations where the Al-Si hypoeutectic structure is combined with hypereutectoid Al-Si liners and cast iron cylinder liners. These studies are utilized to aid the implementation of Al-Si liners into the Nemak V6 engine block and bi-metallic cutting of the head decks. Machining behavior is also quantified for the investigated microstructures, and the Silicon Modification Level (SiML) is utilized for microstructural analysis as it relates to the machining behavior.

Influence of Cu on modifying the beta phase and enhancing the mechanical properties of recycled Al-Si-Fe cast alloys.

PubMed

Basak, C B; Babu, N Hari

2017-07-18

High iron impurity affects the castability and the tensile properties of the recycled Al-Si alloys due to the presence of the Fe containing intermetallic β-Al 9 Fe 2 Si 2 phase. To date only Mn addition is known to transform the β-Al 9 Fe 2 Si 2 phase in the Al-Si-Fe system. However, for the first time, as reported here, it is shown that β-phase transforms to the ω-Al 7 Cu 2 Fe phase in the presence of Cu, after solutionization at 793 K. The ω-phase decomposes below 673 K resulting into the formation of θ-Al 2 Cu phase. However, the present thermodynamic description of the Al-Si-Fe-Cu system needs finer tuning to accurately predict the stability of the ω-phase in these alloys. In the present study, an attempt was made to enhance the strength of Al-6wt%Si-2wt%Fe model recycled cast alloy with different amount of Cu addition. Microstructural and XRD analysis were carried out in detail to show the influence of Cu and the stability range of the ω-phase. Tensile properties and micro-hardness values are also reported for both as-cast and solutionized alloys with different amount of Cu without and with ageing treatment at 473 K. The increase in strength due to addition of Cu, in Fe-rich Al-Si alloys is promising from the alloy recyclability point of view.

Cortical processing of tactile stimuli applied in quick succession across the fingertips: temporal evolution of dipole sources revealed by magnetoencephalography.

PubMed

Karageorgiou, Elissaios; Koutlas, Ioannis G; Alonso, Aurelio A; Leuthold, Arthur C; Lewis, Scott M; Georgopoulos, Apostolos P

2008-08-01

We used magnetoencephalography (MEG) in 10 healthy human subjects to study cortical responses to tactile stimuli applied to the fingertips of digits 2-5 of the right hand. Each stimulus lasted 50 ms and was produced by air-driven elastic membranes. Four-hundred stimuli were delivered on each finger in three temporal patterns (conditions). In the "Discrete" condition, stimuli were applied to each finger repetitively with an interstimulus interval (ISI) of 1-2 s. In the "Continuous" condition, stimuli were applied to the fingers sequentially as four-stimulus trains with zero ISI and 1-2 s intervening between trains. Finally, in the "Gap" condition, stimuli were applied as in the Continuous condition but with an ISI of 50 ms. A sensation of tactile motion across fingers (digit 2 --> digit 5) was reported by all subjects in the Continuous and Gap conditions. Cortical responses were extracted as single equivalent current dipoles over a period of 1 s following stimulus onset. In all three conditions, initial responses in left primary somatosensory cortex (SI) were observed ~20 to 50 ms after stimulus onset and were followed by additional left SI responses and bilateral responses in the secondary somatosensory cortex (SII). In addition, in the Continuous and Gap conditions, there was an activation of the precentral gyrus, the temporal aspects of which depended on the temporal relation of the administered stimuli, as follows. An ISI of 0 ms led to activation of the precentral gyrus shortly after the second stimulation, whereas an ISI of 50 ms led to activation of the precentral gyrus after the third stimulation. The current findings support results from previous studies on temporal activity patterns in SI and SII, verify the participation of the precentral gyrus during tactile motion perception and, in addition, reveal aspects of integration of sequential sensory stimulations over nonadjacent areas as well as temporal activity patterns in the postcentral and precentral gyri.

Effect of an external magnetic field on the mass attenuation coefficients of p-Si and n-Si

NASA Astrophysics Data System (ADS)

Yılmaz, D.; Önder, P.

2018-05-01

In this study, the mass attenuation coefficients of p-Si and n-Si semiconductor samples have been determined in an external magnetic field. The semiconductor samples were located to the external magnetic field of intensities 0.2 T, 0.4 T, 0.6 T and 0.8 T. The samples were bombarded by 59.5 keV, 80.1 keV, 121.8 keV and 244.7 keV gamma-rays emitted from Am241, Ba133 and Eu152 radioactive sources. The transmitted photons were detected by a CdTe detector. It was observed that the mass attenuation coefficients of p-Si and n-Si semiconductor samples decrease with increasing gamma-ray energy. Also, the mass attenuation coefficients of the samples increase with applying magnetic field intensity.

siMacro: A Fast and Easy Data Processing Tool for Cell-Based Genomewide siRNA Screens.

PubMed

Singh, Nitin Kumar; Seo, Bo Yeun; Vidyasagar, Mathukumalli; White, Michael A; Kim, Hyun Seok

2013-03-01

Growing numbers of studies employ cell line-based systematic short interfering RNA (siRNA) screens to study gene functions and to identify drug targets. As multiple sources of variations that are unique to siRNA screens exist, there is a growing demand for a computational tool that generates normalized values and standardized scores. However, only a few tools have been available so far with limited usability. Here, we present siMacro, a fast and easy-to-use Microsoft Office Excel-based tool with a graphic user interface, designed to process single-condition or two-condition synthetic screen datasets. siMacro normalizes position and batch effects, censors outlier samples, and calculates Z-scores and robust Z-scores, with a spreadsheet output of >120,000 samples in under 1 minute.

siMacro: A Fast and Easy Data Processing Tool for Cell-Based Genomewide siRNA Screens

PubMed Central

Singh, Nitin Kumar; Seo, Bo Yeun; Vidyasagar, Mathukumalli; White, Michael A.

2013-01-01

Growing numbers of studies employ cell line-based systematic short interfering RNA (siRNA) screens to study gene functions and to identify drug targets. As multiple sources of variations that are unique to siRNA screens exist, there is a growing demand for a computational tool that generates normalized values and standardized scores. However, only a few tools have been available so far with limited usability. Here, we present siMacro, a fast and easy-to-use Microsoft Office Excel-based tool with a graphic user interface, designed to process single-condition or two-condition synthetic screen datasets. siMacro normalizes position and batch effects, censors outlier samples, and calculates Z-scores and robust Z-scores, with a spreadsheet output of >120,000 samples in under 1 minute. PMID:23613684

Benefits of Atrial Substrate Modification Guided by Electrogram Similarity and Phase Mapping Techniques to Eliminate Rotors and Focal Sources Versus Conventional Defragmentation in Persistent Atrial Fibrillation.

PubMed

Lin, Yenn-Jiang; Lo, Men-Tzung; Chang, Shih-Lin; Lo, Li-Wei; Hu, Yu-Feng; Chao, Tze-Fan; Chung, Fa-Po; Liao, Jo-Nan; Lin, Chin-Yu; Kuo, Huan-Yu; Chang, Yi-Chung; Lin, Chen; Tuan, Ta-Chuan; Vincent Young, Hsu-Wen; Suenari, Kazuyoshi; Dan Do, Van Buu; Raharjo, Suunu Budhi; Huang, Norden E; Chen, Shih-Ann

2016-11-01

This prospective study compared the efficacy of atrial substrate modification guided by a nonlinear phase mapping technique with that of conventional substrate ablation. The optimal ablation strategy for persistent atrial fibrillation (AF) was unknown. In phase 1 study, we applied a cellular automation technique to simulate the electrical wave propagation to improve the phase mapping algorithm, involving analysis of high-similarity electrogram regions. In addition, we defined rotors and focal AF sources, using the physical parameters of the divergence and curvature forces. In phase 2 study, we enrolled 68 patients with persistent AF undergoing substrate modification into 2 groups, group-1 (n = 34) underwent similarity index (SI) and phase mapping techniques; group-2 (n = 34) received complex fractionated atrial electrogram ablation with commercially available software. Group-1 received real-time waveform similarity measurements in which a phase mapping algorithm was applied to localize the sources. We evaluated the single-procedure freedom from AF. In group-1, we identified an average of 2.6 ± 0.89 SI regions per chamber. These regions involved rotors and focal sources in 65% and 77% of patients in group-1, respectively. Group-1 patients had shorter ablation procedure times, higher termination rates, and significant reduction in AF recurrence compared to group-2 and a trend toward benefit for all atrial arrhythmias. Multivariate analysis showed that substrate mapping using nonlinear similarity and phase mapping was the independent predictor of freedom from AF recurrence (hazard ratio: 0.26; 95% confidence interval: 0.09 to 0.74; p = 0.01). Our study showed that for persistent AF ablation, a specified substrate modification guided by nonlinear phase mapping could eliminate localized re-entry and non-pulmonary focal sources after pulmonary vein isolation. Copyright © 2016 American College of Cardiology Foundation. Published by Elsevier Inc. All rights reserved.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

NASA Astrophysics Data System (ADS)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Emerging technologies in Si active photonics

NASA Astrophysics Data System (ADS)

Wang, Xiaoxin; Liu, Jifeng

2018-06-01

Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.