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Sample records for additive si source

  1. Refinement of Eutectic Si Phase in Al-5Si Alloys with Yb Additions

    NASA Astrophysics Data System (ADS)

    Li, J. H.; Suetsugu, S.; Tsunekawa, Y.; Schumacher, P.

    2013-02-01

    A series of Al-5 wt pct Si alloys with Yb additions (up to 6100 ppm) have been investigated using thermal analysis and multiscale microstructure characterization techniques. The addition of Yb was found to cause no modification effect to a fibrous morphology involving Si twinning; however, a refined plate-like eutectic structure was observed. The Al2Si2Yb phase was observed with Yb addition level of more than 1000 ppm. Within the eutectic Al and Si phases, the Al2Si2Yb phase was also found as a precipitation from the remained liquid. No Yb was detected in the α-Al matrix or plate-like Si particle, even with Yb addition up to 6100 ppm. The absence of Yb inside the eutectic Si particle may partly explain why no significant Si twinning was observed along {111}Si planes in the eutectic Si particle. In addition, the formation of the thermodynamic stable YbP phases is also proposed to deteriorate the potency of AlP phase in Al alloys. This investigation highlights to distinguish the modification associated with the ever present P in Al alloys. We define modification as a transition from faceted to fibrous morphology, while a reduction of the Si size is termed refinement.

  2. Removal of B from Si by Hf addition during Al–Si solvent refining process

    PubMed Central

    Lei, Yun; Ma, Wenhui; Sun, Luen; Wu, Jijun; Dai, Yongnian; Morita, Kazuki

    2016-01-01

    Abstract A small amount of Hf was employed as a new additive to improve B removal in the electromagnetic solidification refinement of Si with an Al–Si melt, because Hf has a very strong affinity for B. The segregation ratio of Hf between the solid Si and Al–Si melt was estimated to range from 4.9 × 10−6 to 8.8 × 10−7 for Al concentrations of 0 to 64 at.%, respectively. The activity coefficient of Hf in solid Si at its infinite dilution was also estimated. A small addition of Hf (<1025 parts per million atoms, ppma) significantly improved the B removal. It was confirmed that the use of an increased Hf addition, slower cooling rate, and Al-rich Al–Si melt as the refining solvent removed B more efficiently. B in Si could be removed as much as 98.2% with 410 ppma Hf addition when the liquidus temperature of the Al–Si melt was 1173 K and the cooling rate was 4.5–7.6 K min–1. The B content in Si could be controlled from 153 ppma to 2.7 ppma, which meets the acceptable level for solar-grade Si. PMID:27877853

  3. B Removal by Zr Addition in Electromagnetic Solidification Refinement of Si with Si-Al Melt

    NASA Astrophysics Data System (ADS)

    Lei, Yun; Ma, Wenhui; Sun, Luen; Dai, Yongnian; Morita, Kazuki

    2016-02-01

    This study investigated a new process of enhancing B removal by adding small amounts of Zr in the electromagnetic solidification refinement of Si with Si-Al melt. B in Si was removed by as much as 97.2 pct by adding less than 1057 ppma Zr, and the added Zr was removed by as much as 99.7 pct. In addition, Zr is more effective in enhancing B removal than Ti in the same electromagnetic solidification refining process.

  4. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source

    NASA Astrophysics Data System (ADS)

    Meng, Erchao; Ueki, Akiko; Meng, Xiang; Suzuki, Hiroaki; Itahara, Hiroshi; Tatsuoka, Hirokazu

    2016-08-01

    Si nanosheets connected to Si nanowires were synthesized using a MnCl2/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH4 or SiCl4. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  5. Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode.

    PubMed

    Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia

    2015-09-09

    Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.

  6. Effect of Si addition on AC and DC magnetic properties of (Fe-P)-Si alloy

    NASA Astrophysics Data System (ADS)

    Gautam, Ravi; Prabhu, D.; Chandrasekaran, V.; Gopalan, R.; Sundararajan, G.

    2016-05-01

    We report a new (Fe-P)-Si based alloy with relatively high induction (1.8-1.9 T), low coercivity (< 80 A/m), high resistivity (˜38 μΩ cm) and low core loss (217 W/kg @ 1 T/1 kHz) comparable to the commercially available M530-50 A5 Si-steel. The attractive magnetic and electrical properties are attributed to i) the two phase microstructure of fine nano precipitates of Fe3P dispersed in α-Fe matrix achieved by a two-step heat-treatment process and ii) Si addition enhancing the resistivity of the α-Fe matrix phase. As the alloy processing is by conventional wrought metallurgy method, it has the potential for large scale production.

  7. Two New SiO Maser Sources in High-Mass Star-forming Regions

    NASA Astrophysics Data System (ADS)

    Cho, Se-Hyung; Yun, Youngjoo; Kim, Jaeheon; Liu, Tie; Kim, Kee-Tae; Choi, Minho

    2016-08-01

    Silicon monoxide (SiO) masers are rare in star-forming regions, with the exception of five known SiO maser sources. However, we detected two new SiO maser sources from infrared-loud clumps of the high-mass star-forming regions G19.61-0.23 and G75.78+0.34. High angular resolution observations toward G19.61-0.23 suggest that the deeply embedded young stellar object (YSO) of SMA1 is powering the SiO masers. In addition, the SiO v = 1, J = 1 \\to 0 line shows four spike features, while the v = 2 maser shows combined features of one spike and broad wing components, implying energetic activities of the YSO of SMA1 in the G19.61-0.23 hot molecular core. The SiO v = 0, J = 2 \\to 1 emission shows bipolar outflows in the NE-SW direction with respect to the center of the SiO maser source. A high angular resolution map of the SiO v = 1, J = 2 \\to 1 maser in G75.78+0.34 shows that the SiO maser is associated with the CORE source at the earliest stage of high-mass star formation. Therefore, the newly detected SiO masers and their associated outflows will provide good probes for investigating this early high-mass star formation.

  8. SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR SiO MASER SOURCES

    SciTech Connect

    Cho, Se-Hyung; Kim, Jaeheon E-mail: jhkim@kasi.re.kr

    2012-11-01

    We carried out simultaneous observations of four maser lines, SiO v = 1, 2, {sup 29}SiO v = 0, J = 1-0, and H{sub 2}O 6{sub 16}-5{sub 23}, toward 83 known SiO maser sources without H{sub 2}O maser detections using the Korean VLBI Network single dish telescopes. Both SiO and H{sub 2}O masers were detected from 14 sources, resulting in a detection rate of 16.9%. H{sub 2}O maser emission without SiO maser emission was detected from one source. Therefore, H{sub 2}O maser emission was newly detected from 15 sources. SiO maser emission without H{sub 2}O detection was detected from 55 sources, which gives a total SiO maser detection rate of 83.1% when including sources that have both SiO and H{sub 2}O maser emission detected. SiO v = 2 maser emission was detected from nine sources without v = 1 maser detection. The SiO v = 2 maser sources without the v = 1 maser detections need to be investigated, with a large number of v = 2 only maser sources related to the development of dust shells and their evolutionary sequence from asymptotic giant branch (AGB) to post-AGB stars. The average values of the peak and integrated antenna temperature ratios of H{sub 2}O to SiO masers are 0.44 and 0.28 in the 14 sources that have both SiO and H{sub 2}O detections. Observational characteristics of several individual sources are noted and the dependence of the different maser intensity ratios on the stellar phase is discussed. In addition, the observational results of SiO and H{sub 2}O masers are discussed in IRAS two-color diagrams.

  9. Optimum condition to fabricate 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of Si method with Si source

    NASA Astrophysics Data System (ADS)

    Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

    2012-12-01

    A low temperature (≦120 °C) fabrication method to form relatively thick SiO2/Si structure with a Si source has been developed using the advanced nitric acid oxidation of Si (NAOS) method, and the formation mechanism has been investigated. The reaction mechanism consists of direct oxidation of Si, dissolution of Si sources, and surface reaction of the dissolved Si species. The dissolved Si species is present in HNO3 solutions as mono-silicic acid and reacts with oxidizing species formed by decomposition of HNO3 on an ultrathin SiO2 layer (i.e., 1.4 nm) produced by the direct oxidation of Si substrates with HNO3 solutions. To achieve a uniform thickness of SiO2 layer with a smooth surface, HNO3 solutions with concentrations higher than 60 wt. % are needed because the dissolved Si species polymerizes in HNO3 solutions when the concentration is below 60 wt. %, resulting in the formation of SiO2 particles in HNO3, which are deposited afterwards on the SiO2 layer. In spite of the low temperature formation at 120 °C, the electrical characteristics of the advanced NAOS SiO2 layer formed with 68 wt. % HNO3 and subsequent post-metallization anneal at 250 °C are nearly identical to those of thermal oxide formed at 900 °C.

  10. Refinement of Eutectic Si in High Purity Al-5Si Alloys with Combined Ca and P Additions

    NASA Astrophysics Data System (ADS)

    Ludwig, Thomas Hartmut; Li, Jiehua; Schaffer, Paul Louis; Schumacher, Peter; Arnberg, Lars

    2015-01-01

    The effects of combined additions of Ca and P on the eutectic Si in a series of high purity Al-5 wt pct Si alloys have been investigated with the entrained droplet technique and complementary sets of conventional castings. Differential scanning calorimetry (DSC) and thermal analysis were used to investigate the eutectic droplet undercooling and the recalescence undercooling, respectively. Optical microscopy, SEM, EPMA, and TEM were employed to characterize the resultant microstructures. It was found that 250 ppm Ca addition to Al-5Si wt pct alloys with higher P contents leads to a significant increase of the eutectic droplet undercooling. For low or moderate cooling rates, the TEM results underline that Ca additions do not promote Si twinning. Thus, a higher twin density cannot be expected in Ca containing Al-Si alloys after, e.g., sand casting. Consequently, a refinement of the eutectic Si from coarse flake-like to fine plate-like structure, rather than a modification of the eutectic Si to a fibrous morphology, was achieved. This strongly indicates that the main purpose of Ca additions is to counteract the coarsening effect of the eutectic Si imposed by higher P concentrations. Significant multiple Si twinning was observed in melt-spun condition; however, this can be attributed to the higher cooling rate. After DSC heating (slow cooling), most of Si twins disappeared. Thus, the well-accepted impurity-induced twinning mechanism may be not valid in the case of Ca addition. The possible refinement mechanisms were discussed in terms of nucleation and growth of eutectic Si. We propose that the pre-eutectic Al2Si2Ca phase and preferential formation of Ca3P2 deactivate impurity particles, most likely AlP, poisoning the nucleation sites for eutectic Si.

  11. Formation of Si nanowires by the electrochemical reduction of SiO2 with Ni or NiO additives.

    PubMed

    Fang, Sheng; Wang, Han; Yang, Juanyu; Yu, Bing; Lu, Shigang

    2016-08-15

    Various morphologies of silicon nanowires (SiNWs) were successfully prepared by the electrochemical reduction of silica mixed with different additives (Au, Ag, Fe, Co, Ni, and NiO, respectively). Straight SiNWs were extensively obtained by the electro-reduction of porous Ni/SiO2 blocks in molten CaCl2 at 900 °C. The SiNWs had a wide diameter distribution of 80 to 350 nm, and the Ni-Si droplets were found on the tips of the nanowires. The growth mechanism of SiNWs was investigated, which could reveal that the nano-sized Ni-Si droplets formed at the Ni/SiO2/CaCl2 three-phase interlines. Based on the mechanism proposed, NiO particles with sub-micrometer size were selected as the additive, and straight SiNWs with diameters of 60 to 150 nm were also prepared via the electrochemical process.

  12. The improved mechanical properties of β-CaSiO3 bioceramics with Si3N4 addition.

    PubMed

    Pan, Ying; Zuo, Kaihui; Yao, Dongxu; Yin, Jinwei; Xin, Yunchuan; Xia, Yongfeng; Liang, Hanqin; Zeng, Yuping

    2015-03-01

    The motivation of this study is to investigate the effect of Si3N4 addition on the sinterability of β-CaSiO3 ceramics. β-CaSiO3 ceramics with different content of Si3N4 were prepared at the sintering temperature ranging from 1000°C to 1150°C. The results showed that Si3N4 can be successfully used as sintering additive by being oxidized to form SiO2. The β-CaSiO3 ceramics with 3wt% Si3N4 sintered at 1100°C revealed flexural strength, hardness and fracture toughness of 157.2MPa, 4.4GPa and 2.3MPam(1/2) respectively, which was much higher than that of pure β-CaSiO3 ceramics (41.1MPa, 1.0GPa, 1.1MPam(1/2)). XRD analysis and SEM observation indicated that the main phase maintained to be β-phase after sintering.

  13. SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR SiO AND H{sub 2}O MASER SOURCES. I

    SciTech Connect

    Kim, Jaeheon; Cho, Se-Hyung; Oh, Chung Sik; Byun, Do-Young E-mail: cho@kasi.re.k E-mail: bdy@kasi.re.k

    2010-05-15

    We present the results of simultaneous observations of both SiO and H{sub 2}O masers toward 166 known SiO and H{sub 2}O maser sources using the Korean VLBI Network Yonsei 21 m radio telescope during 2009 June. Both SiO and H{sub 2}O maser emission were detected from 112 sources giving a detection rate of 67% at one epoch observation. SiO-only maser emission was detected from 42 sources, while H{sub 2}O-only maser emission was detected from four sources. Most of the SiO masers appear around the stellar velocity, while H{sub 2}O masers show different characteristics compared with SiO masers. There are more than 20 sources that show a one-way peak or double peaks with respect to the stellar velocity and SiO maser peak velocity. The H{sub 2}O maser peak and integrated intensity ratios with respect to those of SiO (v = 1) show increasingly larger values from Mira variables, to OH/IR stars, to semi-regular variables. In addition, the IRAS two-color diagram of SiO and H{sub 2}O maser observational results is discussed.

  14. 17 CFR 37.408 - Additional sources for compliance.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 17 Commodity and Securities Exchanges 1 2014-04-01 2014-04-01 false Additional sources for compliance. 37.408 Section 37.408 Commodity and Securities Exchanges COMMODITY FUTURES TRADING COMMISSION SWAP EXECUTION FACILITIES Monitoring of Trading and Trade Processing § 37.408 Additional sources...

  15. 17 CFR 38.201 - Additional sources for compliance.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 17 Commodity and Securities Exchanges 1 2013-04-01 2013-04-01 false Additional sources for compliance. 38.201 Section 38.201 Commodity and Securities Exchanges COMMODITY FUTURES TRADING COMMISSION DESIGNATED CONTRACT MARKETS Contracts Not Readily Subject to Manipulation § 38.201 Additional sources...

  16. 17 CFR 38.201 - Additional sources for compliance.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 17 Commodity and Securities Exchanges 1 2014-04-01 2014-04-01 false Additional sources for compliance. 38.201 Section 38.201 Commodity and Securities Exchanges COMMODITY FUTURES TRADING COMMISSION DESIGNATED CONTRACT MARKETS Contracts Not Readily Subject to Manipulation § 38.201 Additional sources...

  17. Enhanced magnetic behaviors of CoPt nanoparticles by addition of SiO{sub 2}

    SciTech Connect

    Wang, Yaxin; Zhang, Xiaolong; Liu, Yang; Jiang, Yuhong; Zhang, Yongjun; Yang, Jinghai

    2014-05-01

    Equiatomic L1{sub 0} CoPt alloy nanoparticles (NPs) with various contents of SiO{sub 2} are synthesized by the simple sol–gel method. The SiO{sub 2} additions restrain the growth of grain and hinder the agglomeration formation. The coercivity increases first and then decreases with SiO{sub 2} addition. Compared to the 0 μl-SiO{sub 2} CoPt NPs, the higher ordering degree and better magnetic properties are obtained by the addition of amount 10 μl SiO{sub 2} in our sample. And the coercivity is two times as large as that of 0 μl-SiO{sub 2} NPs. When the addition of SiO{sub 2} is more than 10 μl, the deteriorated magnetic properties are ascribed to the transformation from hard magnetically phase to soft magnetically phase due to the decrease of particle size. - Graphical abstract: L1{sub 0} CoPt alloy nanoparticles with various contents of SiO{sub 2} are synthesized by sol–gel method. The effects of SiO{sub 2} on the structure and magnetic properties of CoPt nanoparticles are investigated. - Highlights: • The L1{sub 0} CoPt–SiO{sub 2} nanoparticles (NPs) were synthesized by sol–gel method. • Effects of SiO{sub 2} content on the structure and magnetic properties were investigated. • The addition of SiO{sub 2} restrained the growth of particle size. • CoPt–10 μl SiO{sub 2} NPs showed a higher ordering degree and better magnetic properties.

  18. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  19. Study of Heterogeneous Nucleation of Eutectic Si in High-Purity Al-Si Alloys with Sr Addition

    NASA Astrophysics Data System (ADS)

    Zarif, Muhammad; McKay, Brian; Schumacher, Peter

    2011-06-01

    Al-5 wt pct Si master-alloys with controlled Sr and/or P addition/s were produced using super purity Al 99.99 wt pct and Si 99.999 wt pct materials in an arc melter. The master-alloy was melt-spun resulting in the production of thin ribbons. The Al matrix of the ribbons contained entrained Al-Si eutectic droplets that were subsequently investigated. Differential scanning calorimetry, thermodynamic calculations, and transmission electron microscopy techniques were employed to examine the effect of the Sr and P additions on eutectic undercoolings and nucleation phenomenon. Results indicate that, unlike P, Sr does not promote nucleation. Increasing Sr additions depressed the eutectic nucleation temperature. This may be a result of the formation of a Sr phase that could consume or detrimentally affect potent AlP nucleation sites.

  20. Sintering and properties of Si3N4 with and without additives by HIP treatment

    NASA Technical Reports Server (NTRS)

    Kuratani, S.; Shimada, M.; Koizumi, M.

    1986-01-01

    Hot Isostatic Pressing (HIP) of Si3N4 powders with and without additives was performed using a glass container, and various kinds of pressureless-sintered Si3N4 were HIP'ed without a container. The effects of HIP treatment on density, microstructure, flexural strength, microhardness, and fracture toughness on Si3N4 ceramics were studied. Using a glass container it was difficult to reach theoretical density. The microhardness of HIP'ed Si3N4 without additives was low, and the fracture toughness of HIP'ed Si3N4 with and without additives was 22 to 25 W/m-K, and it decreased with increasing the amount of additives. The density and flexural strength, and hardness of pressureless-sintered Si3N4 which contained Al2O and Y2O3 as oxide additives were remarkably improved by HIP treatment using nitrogen as a pressure transmitting gas. It is very important to select the sintering conditions for fabricating the presintered body of Si3N4 in order to improve the mechanical properties of Si3N4 by HIP treatment.

  1. Modification of Mo-Si alloy microstructure by small additions of Zr.

    PubMed

    Mousa, M; Wanderka, N; Timpel, M; Singh, S; Krüger, M; Heilmaier, M; Banhart, J

    2011-05-01

    Molybdenum and its alloys are potential materials for high-temperature applications. However, molybdenum is susceptible to embrittlement because of oxygen segregation at the grain boundaries. In order to alleviate the embrittlement small amounts of zirconium were alloyed to a solid solution of Mo-1.5Si alloy. Two Mo-based alloys, namely Mo-1.5Si and Mo-1.5Si-1Zr, were investigated by the complementary high-resolution methods transmission electron microscopy and atom probe tomography. The Mo-1.5Si alloy shows a polycrystalline structure with two silicon-rich intermetallic phases Mo(5)Si(3) and Mo(3)Si located at the grain boundaries and within the grains. In addition, small clusters with up to 10 at% Si were found within the molybdenum solid solution. Addition of a small amount of zirconium to Mo-1.5Si leads to the formation of two intermetallic phases Mo(2)Zr and MoZr(2), which are located at the grain boundaries as well as within the interior of the grain. Transmission electron microscopy shows that small spherical Mo-Zr-rich precipitates (<10nm) decorate the grain boundaries. The stoichiometry of the small precipitates was identified as Mo(2)Zr by atom probe tomography. No Si-enriched small precipitates were detected in the Mo-1.5Si-1Zr alloy. It is concluded that the presence of zirconium hinders their formation.

  2. Influence of Si Addition on Quenching Sensitivity and Formation of Nano-Precipitate in Al-Mg-Si Alloys.

    PubMed

    Kim, JaeHwang; Hayashi, Minoru; Kobayashi, Equo; Sato, Tatsuo

    2016-02-01

    The age-hardening is enhanced with the high cooling rate since more vacancies are formed during quenching, whereas the stable beta phase is formed with the slow cooling rate just after solid solution treatment resulting in lower increase of hardness during aging. Meanwhile, the nanoclusters are formed during natural aging in Al-Mg-Si alloys. The formation of nanoclusters is enhanced with increasing the Si amount. High quench sensitivity based on mechanical property changes was confirmed with increasing the Si amount. Moreover, the nano-size beta" phase, main hardening phase, is more formed by the Si addition resulting in enhancement of the age-hardening. The quench sensitivity and the formation behavior of precipitates are discussed based on the age-hardening phenomena.

  3. Silicon purification using a Cu-Si alloy source

    NASA Technical Reports Server (NTRS)

    Powell, R. C.; Tejedor, P.; Olson, J. M.

    1986-01-01

    Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

  4. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    SciTech Connect

    Cao, J. |

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  5. Fabrication and characterization of Si3N4 ceramics without additives by high pressure hot pressing

    NASA Technical Reports Server (NTRS)

    Shimada, M.; Tanaka, A.; Yamada, T.; Koizumi, M.

    1984-01-01

    High pressure hot-pressing of Si3N4 without additives was performed using various kinds of Si3N4 powder as starting materials, and the relation between densification and alpha-beta phase transformation was studied. The temperature dependences of Vickers microhardness and fracture toughness were also examined. Densification of Si3N4 was divided into three stages, and it was found that densification and phase transformation of Si3N4 under pressure were closely associated. The results of the temperature dependence of Vickers microhardness indicated that the high-temperature hardness was strongly influenced not only by the density and microstructure of sintered body but also by the purity of starting powder. The fracture toughness values of Si3N4 bodies without additives were 3.29-4.39 MN/m to the 3/2 power and independent of temperature up to 1400 C.

  6. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  7. Fabrication of highly dense SiN4 ceramics without additives by high pressure sintering

    NASA Technical Reports Server (NTRS)

    Takatori, K.; Shimade, M.; Koizumi, M.

    1984-01-01

    Silicon nitride (Si3N4) is one of candidate materials for the engineering ceramics which is used at high temperatures. The mechanical strengths of hot pressed or sintered Si2N4 ceramics containing some amount of additives, however, are deteriorated at elevated temperatures. To improve the high temperature strength of Si3N4 ceramics, an attempt to consolidate Si3N4 without additives was made by high pressure sintering technique. Scanning electron micrographs of fracture surfaces of the sintered bodies showed the bodies had finely grained and fully self-bonded sintered bodies were 310N sq m at room temperature and 174N/sq m at 1200 C.

  8. An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth

    NASA Astrophysics Data System (ADS)

    Scarinci, F.; Casella, A.; Lagomarsino, S.; Fiordelisi, M.; Strappaveccia, P.; Gambacorti, N.; Grimaldi, M. G.; Xue, LiYing

    1996-08-01

    In this paper we present two kind of sources used in Si MBE growth: a Si source where an electron beam is electrostatically deflected onto a Si rod and a high temperature B source to be used for p-doping. Both sources have been designed and constructed at IESS. The Si source is constituted of a Si rod mounted on a 3/4″ flange with high-voltage connector. A W filament held at high voltage (up to 2000 V) is heated by direct current. Electrons from the filament are electrostatically focused onto the Si rod which is grounded. This mounting allows a minimum heating dispersion and no contamination, because the only hot objects are the Si rod and the W filament which is mounted in such a way that it cannot see the substrate. Growth rates of 10 Å/min on a substrate at 20 cm from the source have been measured. Auger and LEED have shown no contamination. The B source is constituted of a graphite block heated by direct current. A pyrolitic graphite crucible put in the graphite heater contains the elemental B. The cell is water cooled and contains Ta screens to avoid heat dispersion. It has been tested up to a temperature of 1700°C. P-doped Si 1- xGe x layers have been grown and B concentration has been measured by SIMS. A good control and reproducibility has been attained.

  9. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    NASA Astrophysics Data System (ADS)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit

    2015-08-01

    In this study, Laser Engineered Net Shaping (LENSTM) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples' top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV0.2) > 100% Ti-N coating (1846 ± 68.5 HV0.2) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV0.2). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance.

  10. Volume 3a - Area Source Methods - Additional Documents

    EPA Pesticide Factsheets

    Nonpoint (area) source emission reference materials from the Emissions Inventory Improvement Program (EIIP). Provides nonpoint source guidance on ammonia emissions from natural landscapes, fertilized soils, and nonagricultural sources.

  11. Strength and microstructure of sintered Si3N4 with rare-earth-oxide additions

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Mieskowski, D. M.

    1985-01-01

    Room temperature, 700-, 1000-, 1200-, and 1370-C examinations of the effect of 1.7-2.6 mol pct rare earth oxide additions to sintered Si3N4 are conducted. While the room temperature-1000 C bend strengths were higher for this material with Y2O3 additions than with CeO2, La2O3, or Sm2O3, the reverse was true at 1200-1370 C. This phenomenon is explained on the basis of microstructural differences, since quantitative microscopy of SEM replicas showed the Si3N4-Y2O3 composition to contain both a higher percentage of elongated grains and a coarser microstructure than the other three alternatives. The elongated grains appear to increase this composition's low temperature strength irrespective of microstructural coarseness; this coarseness, however, decreases strength relative to the other compositions at higher temperatures.

  12. Additional experiments relative to the shelf life of Li(Si)/FeS2 thermal batteries

    NASA Astrophysics Data System (ADS)

    Searcy, J. Q.; Armijo, J. R.

    1985-02-01

    A continuing effort to develop a new thermal battery technology based on the Li(Si)/FeS2 electrochemical couple is reported. The results relate to the long shelf life requirement for thermal batteries designed by Sandia, and include topics relevant to leakage through the hermetic seal and accelerated aging experiments with materials new to the technology. Conclusions relevant to leakage through the hermetic seal are that the maximum leak rate must not exceed 1.8 x 10(-7) w, where w is the grams of Li(Si) contained by a battery, and that a bomb type leak test can be designed that is adequate for most Li(Si)/FeS2 batteries. Conclusions relevant to long term compatibility of new materials include the following: nickel is not compatible with the iron disulfide in the cathode; the CaSi2 additive used to suppress the initial voltage transient does not react or degrade during accelerated aging experiments, but the use of that material can lead to an increase in the variability of the activated lives, especially for long life batteries; Grafoil current collectors used with the cathode do not degrade in accelerated aging experiments.

  13. Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

    NASA Astrophysics Data System (ADS)

    Komatsu, Naoyoshi; Mitani, Takeshi; Hayashi, Yuichiro; Kato, Tomohisa; Harada, Shunta; Ujihara, Toru; Okumura, Hajime

    2017-01-01

    For solution growth of 4H-SiC with Si0.6-x-yCr0.4AlxSny solvents, the changes in surface morphology and polytype induced by the addition of Sn and Al to the Si0.6Cr0.4 solvent were investigated. Growth with Si0.6Cr0.4 solvents resulted in a rough surface covered with large macrosteps that were several micrometers high, and the polytype of the grown layer transformed to 6H and 15R-SiC. The surface roughening and polytype instability were suppressed when more than 2 at% Al was added to the SiCr0.4 solvent. We also found that the combined addition of both 2-4 at% Sn and 0.5-1 at% Al resulted in smooth surface morphology. We discussed the modification of the surface morphology of 4H-SiC caused by the additives in terms of the wetting properties of the solvents. Based on the results of experiments and thermodynamic calculations, the addition of both Sn and Al increased the liquid/solid interfacial energy. Because the two-dimensional nucleation energy increases with the interfacial energy, we conclude that smooth step flow growth of 4H-SiC was achieved by lowering the frequency of two-dimensional nucleation on the growth surface.

  14. Percolation model with an additional source of disorder

    NASA Astrophysics Data System (ADS)

    Kundu, Sumanta; Manna, S. S.

    2016-06-01

    The ranges of transmission of the mobiles in a mobile ad hoc network are not uniform in reality. They are affected by the temperature fluctuation in air, obstruction due to the solid objects, even the humidity difference in the environment, etc. How the varying range of transmission of the individual active elements affects the global connectivity in the network may be an important practical question to ask. Here a model of percolation phenomena, with an additional source of disorder, is introduced for a theoretical understanding of this problem. As in ordinary percolation, sites of a square lattice are occupied randomly with probability p . Each occupied site is then assigned a circular disk of random value R for its radius. A bond is defined to be occupied if and only if the radii R1 and R2 of the disks centered at the ends satisfy a certain predefined condition. In a very general formulation, one divides the R1-R2 plane into two regions by an arbitrary closed curve. One defines a point within one region as representing an occupied bond; otherwise it is a vacant bond. The study of three different rules under this general formulation indicates that the percolation threshold always varies continuously. This threshold has two limiting values, one is pc(sq) , the percolation threshold for the ordinary site percolation on the square lattice, and the other is unity. The approach of the percolation threshold to its limiting values are characterized by two exponents. In a special case, all lattice sites are occupied by disks of random radii R ∈{0 ,R0} and a percolation transition is observed with R0 as the control variable, similar to the site occupation probability.

  15. Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

    SciTech Connect

    Nordmark, H.; Holmestad, R.; Nagayoshi, H.; Matsumoto, N.; Nishimura, S.; Terashima, K.; Marioara, C. D.; Walmsley, J. C.; Ulyashin, A.

    2009-02-15

    Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to micrometer range of mono- and as-cut multicrystalline silicon, was observed after deposition of WSi{sub 2} particles that acted as a mask for subsequent hydrogen radical etching. Simultaneous Si whisker growth was observed for long residence time of the source gas and low H{sub 2} flow rate with high pressure. The whiskers formed via vapor-solid-solid growth, in which the deposited WSi{sub 2} particles acted as catalysts for a subsequent metal-induced layer exchange process well below the eutectic temperature. In this process, SiH{sub x} species, formed by substrate etching by the H radicals, diffuse through the metal particles. This leads to growth of crystalline Si whiskers via metal-induced solid-phase crystallization. Transmission electron microscopy, electron diffraction, and x-ray energy dispersive spectroscopy were used to study the WSi{sub 2} particles and the structure of the Si substrates in detail. It has been established that the whiskers are partly crystalline and partly amorphous, consisting of pure Si with WSi{sub 2} particles on their tips as well as sometimes being incorporated into their structure.

  16. Densification of Reaction Bonded Silicon Nitride with the Addition of Fine Si Powder Effects on the Sinterability and Mechanical Properties

    SciTech Connect

    Lee, Sea-Hoon; Cho, Chun-Rae; Park, Young-Jo; Ko, Jae-Woong; Kim, Hai-Doo; Lin, Hua-Tay; Becher, Paul F

    2013-01-01

    The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain Lu2O3-SiO2 additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at 1850oC through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at 1950oC. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine Si3N4 particles after nitridation and sintering at and above 1600oC. The amount of residual SiO2 within the specimens was not strongly affected by adding fine Si powder because most of the SiO2 layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and 8.0 MPa m1/2, respectively.

  17. Radiation safety attached to radioactive sources management - additional aspects

    SciTech Connect

    Kositsyn, V.F.

    1993-12-31

    Radiation sources are used in many scientific areas. Safety management requirements are determined for them with guarantee of the international and national dose limits unexceeding. As a rule, such dose limits are being developed concerning the type, energy, and flux of main radiation. Lack of knowledge of these attendant radiations can put personnel in danger. The study of the attendant neutron and gamma-radiations for plutonium 128 alpha sources was made.

  18. Improvement of low-humidity performance of PEMFC by addition of hydrophilic SiO 2 particles to catalyst layer

    NASA Astrophysics Data System (ADS)

    Jung, Un Ho; Park, Ki Tae; Park, Eun Hee; Kim, Sung Hyun

    Hydrophilic SiO 2 particles are added to the catalyst layer of a fuel cell membrane-electrode assembly (MEA) to improve wettability and performance at low-humidity conditions. The SiO 2 added MEAs are prepared by spraying technique and the contact angle is measured by the sessile drop method. The effects of SiO 2 additions of 0, 20, 40 and 60 wt.% (based on Pt/C) are investigated for various relative humidity levels in the anode and the cathode. The increased wettability of the cathode catalyst layer exerts an adverse effect on cell performance by causing flooding; this result demonstrates the hydrophilicity of SiO 2. With 40 wt.% addition of SiO 2 to the anode catalyst layer, the current density at 0.6 V and 0% relative humidity of the anode is 93% of that at 100% relative humidity. By comparison, the performance of a cell using a MEA with no added SiO 2 is only 85% of that at 0% relative humidity. A MEA with SiO 2 addition in the anode gives a higher performance at 60% relative humidity of the cathode than one with an undoped MEA. Increased wettability of the anode catalyst layer caused by SiO 2 addition renders it easy to absorb water from back diffusion.

  19. One component metal sintering additive for {beta}-SiC based on thermodynamic calculation and experimental observations

    SciTech Connect

    Noviyanto, Alfian; Yoon, Dang-Hyok

    2011-08-15

    Graphical abstract: . Standard Gibbs formation free energies vs. temperature for various metal carbides. The heavy line represents the standard Gibbs free energy for {beta}-SiC. The hatched area denotes the typical liquid phase hot pressing temperature of {beta}-SiC (1973-2123 K). Highlights: {yields} Various metal elements were examined as a sintering additive for {beta}-SiC. {yields} Al and Mg enhanced the density significantly without decomposing {beta}-SiC, as predicted by thermodynamic simulation. {yields} Cr, Fe, Ta, Ti, V and W additives formed metal carbide and/or silicide compounds by decomposing {beta}-SiC. {yields} This approach would be useful for selecting effective sintering additive for high temperature ceramics. -- Abstract: Various types of metals were examined as sintering additives for {beta}-SiC by considering the standard Gibbs formation free energy and vapor pressure under hot pressing conditions (1973-2123 K), particularly for applications in nuclear reactors. Metallic elements having the low long-term activation under neutron irradiation condition, such as Cr, Fe, Ta, Ti, V and W, as well as widely used elements, Al, Mg and B, were considered. The conclusions drawn from thermodynamic considerations were compared with the experimental observations. Al and Mg were found to be effective sintering additives, whereas the others were not due to the formation of metal carbides or silicides from the decomposition of SiC under hot pressing conditions.

  20. ENERGETIC NEUTRAL ATOMS: AN ADDITIONAL SOURCE FOR HELIOSPHERIC PICKUP IONS

    SciTech Connect

    Bochsler, Peter; Moebius, Eberhard

    2010-09-20

    Recently, Schwadron and McComas discussed the possibility of inner source pickup particles originating from the ionization of energetic neutral atoms (ENAs), based on new data from the IBEX mission. This proposition has some interesting features, namely, it might be able to explain why inner source pickup ions (PUIs) have a composition resembling solar abundances and show no indication of overabundance of refractory elements, although this should be expected, if the conventional explanation of solar wind-dust interaction for the origin of this heliospheric component were correct. In this Letter, we explore further consequences for ENA-related PUIs and investigate their velocity distributions. We conclude that this model will not reproduce the observed velocity distributions of inner source PUIs and point out a substantial deviation in their composition. However, it seems likely that the ionization of ENAs as observed with IBEX could contribute a significant amount of heliospheric suprathermal tail ions. Some possible consequences of our investigation for heliospheric particle populations are briefly discussed.

  1. Additive Effects on Si3n4 Oxidation/Volatilization in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Robinson, R. Craig; Fox, Dennis S.; Wenglarz, Richard A.; Ferber, Mattison K.

    2002-01-01

    Two commercially available additive-containing silicon nitride materials were exposed in four environments which range in severity from dry oxygen at 1 atm pressure, and low gas velocity to an actual turbine engine. Oxidation and volatilization kinetics were monitored at temperatures ranging from 1066 to 1400 C. The main purpose of this paper is to examine the surface oxide morphology resulting from the exposures. It was found that the material surface was enriched in rare earth silicate phases in combustion environments when compared to the oxides formed on materials exposed in dry oxygen. However, the in situ formation of rare earth disilicate phases offered little additional protection from the volatilization of silica observed in combustion environments. It was concluded that externally applied environmental barrier coatings are needed to protect additive-containing silicon nitride materials from volatilization reactions in combustion environments. Introduction Si3N4 is proposed for use as components, such as vanes, in turbine applications. Tens of thousands of hours of life are needed for both land-based turbines and aeropropulsion applications. Additive-containing SisN4 materials are

  2. Additional muon calculations for the SLC positron source

    SciTech Connect

    Nelson, W.R.; McCall, R.C.

    1985-04-23

    This note is an update to the muon calculations presented in CN-221 and takes into account: (1) a more complete muon production and transport model, including an estimate of wide angle production based on experimental data, (2) additional earth shielding that will be added on top and both sides of the 2/3 tunnel areas, and (3) a detailed analysis of the earth profile as it pertains to shielding in the direction of the SLAC site boundary. The highest annual dose at the SLAC boundary is found to be 13 mrem/year (4000 hours of operation at 50 kW), and this occurs at a horizontal angle of 0 degrees and a vertical angle of 3.6 degrees relative to the incident beam direction. Although the shielding criteria is 10 mrem/year at the site boundary, the radiation transport model becomes somewhat conservative at large distances from the shield, which should bring the 13 mrem/year number actually well below the criteria. This point is also about 28 feet above the roadway. Extension of this line may strike the ground in the Christmas tree farm beyond the SLAC boundary but there will be additional attenuation due to distance. We do not recommend that any additional shielding be added at this time. 4 refs., 1 fig.

  3. Microwaves as an energy source for producing beta-SiC.

    PubMed

    Aguilar, J; Rodríguez, J; Hinojosa, M

    2001-01-01

    This work describes the production of silicon carbide using microwaves as the energy source, which was supplied by means of variable power, up to 2000 Watts, magnetron operating at 2.45 GHz. The obtained samples were analyzed by means of X-ray diffraction and observed with electron microscopy (SEM). Temperatures achieved were around 2000 degrees C, which is the upper limit for the beta-SiC growth regime, before getting other SiC polytypes. Analysis of different portions of the sample showed that beta-SiC was the only formed compound, although free SiO2 and graphite were also present. Observations made by SEM demonstrated different crystal growth regime, meaning that thermal conditions were not totally uniform. The amount of beta-SiC found and the relative simplicity of the device prove that production of this material from silica and graphite is possible by applying microwaves as an energy source.

  4. SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR H{sub 2}O MASER SOURCES

    SciTech Connect

    Kim, Jaeheon; Cho, Se-Hyung; Kim, Sang Joon E-mail: cho@kasi.re.kr

    2013-01-01

    We present the results of simultaneous observations of SiO v = 1, 2, {sup 29}SiO v = 0, J = 1-0, and H{sub 2}O 6{sub 16}-5{sub 23} maser lines toward 152 known stellar H{sub 2}O maser sources using the Yonsei 21 m radio telescope of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and H{sub 2}O masers were detected from 62 sources with a detection rate of 40.8%. The SiO-only maser emission without H{sub 2}O maser detection was detected from 27 sources, while the H{sub 2}O-only maser without SiO maser detection was detected from 22 sources. Therefore, the overall SiO maser emission was detected from 89 sources, resulting in a detection rate of 58.6%. We have identified 70 new detections of the SiO maser emission. For both H{sub 2}O and SiO maser detected sources, the peak and integrated antenna temperatures of SiO masers are stronger than those of H{sub 2}O masers in both Mira variables and OH/IR stars and the relative intensity ratios of H{sub 2}O to SiO masers in OH/IR stars are larger than those in Mira variables. In addition, distributions of 152 observed sources were investigated in the IRAS two-color diagram.

  5. Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    NASA Astrophysics Data System (ADS)

    Wong, Man Hoi; Nakata, Yoshiaki; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2017-04-01

    Enhancement-mode β-Ga2O3 metal–oxide–semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 µm delivered a maximum drain current density (I DS) of 1.4 mA/mm and an I DS on/off ratio near 106. Nonidealities associated with the Al2O3 gate dielectric as well as their impact on enhancement-mode device performance are discussed.

  6. Modifying Si-based consolidants through the addition of colloidal nano-particles

    NASA Astrophysics Data System (ADS)

    Ksinopoulou, E.; Bakolas, A.; Moropoulou, A.

    2016-04-01

    The modification of silicon-based stone consolidants has been the subject of many scientific studies aiming to overcome the commonly reported drawbacks of these materials, such as the tendency to shrink and crack during drying. The addition of nano-particle dispersions into silica matrix has been found to enhance their effectiveness in several ways. Objective of the current research was to study the preparation of particle-modified consolidants (PMC), consisting of an ethyl silicate matrix (TEOS) loaded with colloidal silica (SiO2) nano-particles and oxide titania (TiO2) particles. The effect of the polyacrylic acid on the dispersion stability was also investigated, by varying its concentration into PMC samples. The prepared materials were allowed to dry in two different relative humidity environments and then evaluated based on their stability in the sol phase, the aggregation sizes, determined through dynamic light scattering, the % solids content and their morphological characteristics, observed via scanning electron microscopy (SEM-EDAX). Mercury intrusion porosimetry was also applied to investigate the microstructural characteristics and differences between the prepared consolidants. Significant role in the final form of the material is played by both the initial molar ratios in the mixtures, as well as the conditions where the drying and aging takes place. Based on the results, the three-component PMCs appear to be promising in stone consolidation, as they show a reduction in cracking and shrinkage during drying and a more porous network, compared with the siliceous material, or the two-component TEOS-SiO2 formulation.

  7. Influence of Si addition on the microstructure and mechanical properties of Ti-35Nb alloy for applications in orthopedic implants.

    PubMed

    Tavares, A M G; Ramos, W S; de Blas, J C G; Lopes, E S N; Caram, R; Batista, W W; Souza, S A

    2015-11-01

    In the development of new materials for orthopedic implants, special attention has been given to Ti alloys that show biocompatible alloy elements and that are capable of reducing the elastic modulus. Accordingly, Ti-Nb-Si alloys show great potential for application. Thus, this is a study on the microstructures and properties of Ti-35Nb-xSi alloys (x=0, 0.15, 0.35 and 0.55) (wt%) which were thermally treated and cooled under the following conditions: furnace cooling (FC), air cooling (AC), and water quenching (WQ). The results showed that Si addition is effective to reduce the density of omega precipitates making beta more stable, and to produce grain refinement. Silicides, referred as (Ti,Nb)3Si, were formed for alloys containing 0.55% Si, and its formation presumably occurred during the heating at 1000°C. In all cooling conditions, the hardness values increased with the increasing of Si content, as a result from the strong Si solid solution strengthening effect, while the elastic modulus underwent a continuous reduction due to the reduction of omega precipitates in beta matrix. Lower elastic moduli were observed in water-quenched alloys, which concentration of 0.15% Si was more effective in their reduction, with value around 65 GPa. Regarding Ti-35Nb-xSi alloys (x=0, 0.15 and 0.35), the "double yield point" phenomenon, which is typical of alloys with shape memory effect, was observed. The increase in Si concentration also produced an increase from 382 MPa to 540 MPa in the alloys' mechanical strength. Ti-35Nb-0.55Si alloy, however, showed brittle mechanical behavior which was related to the presence of silicides at the grain boundary.

  8. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    SciTech Connect

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D. Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  9. Addition of poly (propylene glycol) to multiblock copolymer to optimize siRNA delivery

    PubMed Central

    Dai, Zhi; Arévalo, Maria T; Li, Junwei; Zeng, Mingtao

    2014-01-01

    Previous studies have examined different strategies for siRNA delivery with varying degrees of success. These include use of viral vectors, cationic liposomes, and polymers. Several copolymers were designed and synthesized based on blocks of poly(ethylene glycol) PEG, poly(propylene glycol) PPG, and poly(l-lysine). These were designated as P1, P2, and P3. We studied the copolymer self-assembly, siRNA binding, particle size, surface potential, architecture of the complexes, and siRNA delivery. Silencing of GFP using copolymer P3 to deliver GFP-specific siRNA to Neuro-2a cells expressing GFP was almost as effective as using Lipofectamine 2000, with minimal cytotoxicity. Thus, we have provided a new copolymer platform for siRNA delivery that we can continue to modify for improved delivery of siRNA in vitro and eventually in vivo. PMID:24424156

  10. Addition of poly (propylene glycol) to multiblock copolymer to optimize siRNA delivery.

    PubMed

    Dai, Zhi; Arévalo, Maria T; Li, Junwei; Zeng, Mingtao

    2014-01-01

    Previous studies have examined different strategies for siRNA delivery with varying degrees of success. These include use of viral vectors, cationic liposomes, and polymers. Several copolymers were designed and synthesized based on blocks of poly(ethylene glycol) PEG, poly(propylene glycol) PPG, and poly(l-lysine). These were designated as P1, P2, and P3. We studied the copolymer self-assembly, siRNA binding, particle size, surface potential, architecture of the complexes, and siRNA delivery. Silencing of GFP using copolymer P3 to deliver GFP-specific siRNA to Neuro-2a cells expressing GFP was almost as effective as using Lipofectamine 2000, with minimal cytotoxicity. Thus, we have provided a new copolymer platform for siRNA delivery that we can continue to modify for improved delivery of siRNA in vitro and eventually in vivo.

  11. Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

    NASA Astrophysics Data System (ADS)

    Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E.

    2003-04-01

    In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si1-yCy alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si2H6/CH3SiH3 mixtures as a function of C concentration y (0-2.6 at %) and temperature Ts (500-600 °C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In situ isotopically tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregation during steady-state Si1-yCy(001) growth results in charge transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θSi*(y,Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. θSi* increases with increasing y and Ts in the kinetically limited segregation regime while Ed decreases from 2.52 eV for H2 desorption from Si surface sites with Si back bonds to 2.22 eV from Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts,JSi2H6,JCH3SiH3) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in excellent agreement with the experimental data.

  12. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

    SciTech Connect

    Hackley, Justin; Richardson, Christopher J. K.; Sarney, Wendy L.

    2013-11-15

    The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

  13. Improvement of sag resistance by the addition of tungsten in Si-Cr-Mo-V steels

    SciTech Connect

    Nam, W.J.; Lee, C.S.; Ban, D.Y.

    1997-06-01

    The sag resistance of automobile suspension springs is defined, in general, as the resistance to the plastic deformation of springs during repeated loading in service. Since it is one of the most important properties required for high strength spring steels, earlier works on high strength spring steels have concentrated on the improvement of the sag resistance by adding alloying elements or by changing processing treatments. However, the effect of W, a carbide former, on the sag resistance has not been clarified yet. It is, therefore, of interest to investigate the effect of the W addition on the sag resistance. The evaluation of the sag resistance is usually performed by direct static and dynamic tests on prototype springs. However, such a direct method leads to high costs and long testing time. Thus, Furr has proposed the torsional Bauschinger test as one of convenient testing methods, which is related to the Bauschinger effect. He has also shown that the size of hysteresis loops generated in the torsional Bauschinger test has a close relationship with the sag resistance of springs. Ohara, et al. have investigated the correlation between a direct testing on prototype springs and the torsional Bauschinger test, and have shown that a larger loop area in the torsional Bauschinger test represents a higher sag resistance. In view of the foregoing, the purposes of this investigation are to examine the effects of the W addition on (a) the microstructural evolution during tempering and (b) the sag resistance, using the torsional Bauschinger test, for 0.6C-1.5Si-0.5Cr-0.1Mo-0.2V (wt.%) spring steels.

  14. Improved magneto-caloric effect of the Gd50Co50 metallic glass by minor Si addition

    NASA Astrophysics Data System (ADS)

    Tang, B. Z.; Yu, P.; Ding, D.; Wu, C.; Xia, L.

    2017-02-01

    In the present work, we studied the effect of minor Si addition on the magneto-caloric effect (MCE) of the Gd50Co50 metallic glass. The Gd50Co50-xSix (x=2, 5) as-spun ribbons show typical amorphous characteristics in structure and magneto-caloric behaviors. The peak values for the magnetic entropy change (-ΔSmpeak) of the Gd50Co50-xSix (x=0, 2, 5) metallic glasses increase significantly with the addition of Si. The mechanism for the enhanced MCE by minor addition of Si was investigated by revealing the relationship between -ΔSmpeak and the Curie temperature in the Gd-Co-based amorphous ribbons.

  15. C incorporation and segregation during Si 1- yC y/Si( 0 0 1 ) gas-source molecular beam epitaxy from Si 2H 6 and CH 3SiH 3

    NASA Astrophysics Data System (ADS)

    Foo, Y. L.; Bratland, K. A.; Cho, B.; Soares, J. A. N. T.; Desjardins, P.; Greene, J. E.

    2002-08-01

    We have used in situ D 2 temperature-programmed desorption (TPD) to probe C incorporation and surface segregation kinetics, as well as hydrogen desorption pathways, during Si 1- yC y(0 0 1) gas-source molecular beam epitaxy from Si 2H 6/CH 3SiH 3 mixtures at temperatures Ts between 500 and 650 °C. Parallel D 2 TPD results from C-adsorbed Si(0 0 1) wafers exposed to varying CH 3SiH 3 doses serve as reference data. Si 1- yC y(0 0 1) layer spectra consist of three peaks: first-order β 1 at 515 °C and second-order β 2 at 405 °C, due to D 2 desorption from Si monodeuteride and dideuteride phases, as well as a new second-order C-induced γ 1 peak at 480 °C. C-adsorbed Si(0 0 1) samples with very high CH 3SiH 3 exposures yielded a higher-temperature TPD feature, corresponding to D 2 desorption from surface C atoms, which was never observed in Si 1- yC y(0 0 1) layer spectra. The Si 1- yC y(0 0 1) γ 1 peak arises due to desorption from Si monodeuteride species with C backbonds. γ 1 occurs at a lower temperature than β 1 reflecting the lower D-Si * bond strength, where Si * represents surface Si atoms bonded to second-layer C atoms, as a result of charge transfer from dangling bonds. The total integrated monohydride (β 1+γ 1) intensity, and hence the dangling bond density, remains constant with y indicating that C does not deactivate surface dangling bonds as it segregates to the second-layer during Si 1- yC y(0 0 1) growth. Si * coverages increase with y at constant Ts and with Ts at constant y. The positive Ts-dependence shows that C segregation is kinetically limited at Ts⩽650 °C. D 2 desorption activation energies from β 1, γ 1 and β 2 sites are 2.52, 2.22 and 1.88 eV.

  16. Influence of Ti and La Additions on the Formation of Intermetallic Compounds in the Al-Zn-Si Bath

    NASA Astrophysics Data System (ADS)

    Xu, Jin; Gu, Qin-Fen; Li, Qian; Lu, Hu-Sheng

    2016-12-01

    The effect of Ti and La additions on the formation of intermetallic compounds (IMCs) in the galvalume (55Al-Zn-1.6Si wt pct) bath was investigated experimentally and further studied with first-principles calculation. The studied baths contain: 1 wt pct Fe, with Ti content ranging from 0.05 to 0.15 wt pct and La content ranging from 0.05 to 0.30 wt pct. Combination of the experimental results with the thermodynamic analysis shows that the solubility of Fe in the alloy bath decreases with an increase of Ti content, which results in the formation of mass dross. Compared with the Ti-containing alloy, La promotes the formation of τ 5 phase (Fe2Al8Si). When both Ti and La are added, Fe4Al13, τ 5, τ 6 (β-Al4.5FeSi), TiAl3, and Ti2Al20La phases were observed. Since these IMCs would consume more Si in the bath, the decrease of Si content with Ti and La additions is more significant than that of the bath without these additions. Furthermore, the formation mechanism of Ti/TiAl3/Ti2La20La core-shell structure in the coating bath is proposed. This study has implications for strategic design of industry hot-dip production with exceptional mechanical properties of Al alloy coating.

  17. Effect of carbon addition on elevated temperature crack growth resistance in (Mo,W)Si[sub 2]-SiC[sub p] composite

    SciTech Connect

    Ramamurty, U. . Division of Engineering); Suresh, S. . Dept. of Materials Science and Engineering); Petrovic, J.J. . Materials Science and Technology Division)

    1994-10-01

    Experimental results on subcritical crack growth behavior of hot-pressed MoSi[sub 2]-50 mol% WSi[sub 2] alloy reinforced with 30 vol% SiC particles in the temperature range 1,200--1,300 C are presented. The effect of 2 wt % C addition on the stable crack growth resistance of this composite was investigated under both static and cyclic loading conditions. The results indicate that the addition off carbon to the composite improves the subcritical crack growth resistance under both static and cyclic loads and increases the elevated temperature capabilities of the (Mo, W) Si[sub 2] composite. Increasing the temperature from 1,200 to 1,300 C is found to increase the crack growth velocities with a concomitant decrease in the crack growth initiation thresholds. Electron microscopy of the crack-tip region indicates that the stable crack growth process is influenced primarily by interfacial cavitation. At 1,300 C, deformation processes such as twinning of the SiC particles and dislocation motion within the matrix grains appear to play an active role in determining the crack growth kinetics. The role of glassy phase in influencing the high-temperature fracture behavior and its implications for design of the microstructure of the brittle materials are discussed.

  18. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    PubMed

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  19. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ihn, Soo-Ghang; Song, Jong-In; Kim, Young-Hun; Lee, Jeong Yong

    2006-07-01

    High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy reveal that the GaAs nanowires were epitaxially grown on Si substrates with uniform diameters along the nanowires. While GaAs nanowires on Si(111) and (001) substrates were mainly grown along the ⟨111⟩ direction with zinc-blende and wurtzite structures, unusual GaAs nanowires grown along ⟨001⟩ with a pure zinc-blende structure were also observed. Strong photoluminescence was observed from GaAs nanowires grown on a Si(001) substrate at room temperature.

  20. Effect of ternary additions on the oxidation resistance of Ti{sub 5}Si{sub 3}

    SciTech Connect

    Thom, A.J.; Akinc, M. |

    1995-10-01

    Refractory intermetallic silicides are receiving increasing consideration for use as high temperature structural materials. Ti{sub 5}Si{sub 3}-based compositions are attractive due to their ability to incorporate a variety of interstitial ternary additions. These ternary additions present a unique opportunity to potentially tailor physical properties. Previous experimental work has shown that these additions significantly increase the otherwise poor oxidation resistance of undoped Ti{sub 5}Si{sub 3} above 700 C. Recent experimental work by the authors on the oxidation of small atom doped Ti{sub 5}Si{sub 3} is discussed. Interstitial additions of boron, carbon, and oxygen substantially improve the isothermal oxidation resistance of Ti{sub 5}Si{sub 3} at 1,000 C. In contrast, added nitrogen does not provide significant improvement. Even up to 1,306 C, interstitial oxygen imparts excellent oxidation resistance with a mass gain of 1.1 mg/cm{sup 2} after 240 hours.

  1. Additives

    NASA Technical Reports Server (NTRS)

    Smalheer, C. V.

    1973-01-01

    The chemistry of lubricant additives is discussed to show what the additives are chemically and what functions they perform in the lubrication of various kinds of equipment. Current theories regarding the mode of action of lubricant additives are presented. The additive groups discussed include the following: (1) detergents and dispersants, (2) corrosion inhibitors, (3) antioxidants, (4) viscosity index improvers, (5) pour point depressants, and (6) antifouling agents.

  2. The Effect of SiC Particle Addition During FSW on Microstructure and Mechanical Properties of AZ31 Magnesium Alloy

    NASA Astrophysics Data System (ADS)

    Abbasi, M.; Abdollahzadeh, A.; Bagheri, B.; Omidvar, H.

    2015-12-01

    Welding and joining of magnesium alloys exert a profound effect on magnesium application expansion, especially in ground and air transportations where large-size, complex components are required. Due to specific physical properties of magnesium, its welding requires great control. In general, the solid-state nature of friction stir welding (FSW) process has been found to produce a low concentration of defects. In the current research, specimens from AZ31 magnesium alloy were welded together using the friction stir process with previously inserted SiC powder particles in the nugget zone. In other words, during the FSW process, the pre-placed SiC particles were stirred throughout the nugget zone of the weld. The results indicated that proper values of rotation and translation speeds led to good appearance of weld zone and suitable distribution of SiC particles producing increased weld strength. The comparison of the microstructures and mechanical properties of FS-welded AZ31 with those of FS-welded one using pre-placed SiC particles showed that the addition of SiC particles decreased the grain size and increased the strength and the formability index.

  3. Influence of addition of Si in FeAl alloys: Theory

    NASA Astrophysics Data System (ADS)

    Apiñaniz, E.; Legarra, E.; Plazaola, F.; Garitaonandia, J. S.

    The magnetic behaviour of Fe-based magnetic systems has been studied theoretically and experimentally for many years [E.P. Wohlfath, K.H.J. Buschow, Handbook of Ferromagnetic Materials, vol. 4, North-Holland Elsevier Science Publishers, Amsterdam, New York, Oxford, Tokyo, 1988 (Chapter 1)]. Starting with Al dissolved in Fe, the first stable structure is the D03 cubic structure and it exists over the range 23-37 at% Al. In this range these alloys present interesting magnetic properties. The other stable compound existing over a wide range of composition is FeAl which is also cubic, with the B2 structure (CsCl), and it exists over the range 37-50 at% Al. On the other hand, the FeAlSi alloys show the D03 structure, but do not show the B2 structure. The effect of Si in these alloys is double; on the one hand, it contributes to the decrease of the lattice parameter which, as reported by Nogues et al. [Phys. Rev. B 74 (2006) 024407], has a major influence on the magnetism and, on the other hand, having one more p electron than the Al atom, it promotes the charge transfer from Si to Fe atoms, as reported by Legarra et al. [Hyperfine Interact. 169 (2006) 1217-1222]. In this work, we perform ab-initio electronic calculations by means of tight binding linear muffin-tin orbital (TBLMTO) and Vienna Ab-initio Simulation Package (VASP) in order to study the magnetic contribution of Si/Al substitution in the FeAl alloys.

  4. Effects of La addition on the microstructure and tensile properties of Al-Si-Cu-Mg casting alloys

    NASA Astrophysics Data System (ADS)

    Lu, Tao; Pan, Ye; Wu, Ji-li; Tao, Shi-wen; Chen, Yu

    2015-04-01

    The effects of La addition on the microstructure and tensile properties of B-refined and Sr-modified Al-11Si-1.5Cu-0.3Mg casting alloys were investigated. With a trace addition of La (0.05wt%-0.1wt%), the mutual poisoning effect between B and Sr can be neutralized by the formation of LaB6 rather than SrB6. By employing a La/B weight ratio of 2:1, uniform microstructures, which are characterized by well refined α-Al grains and adequately modified eutectic Si particles as well as the incorporation of precipitated strengthening intermetallics, are obtained and lead to appreciable tensile properties with an ultimate tensile strength of 270 MPa and elongation of 5.8%.

  5. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

    SciTech Connect

    Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

    2016-01-04

    Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

  6. The source of dissolved silicon in soil surface solutions of a temperate forest ecosystem: Ge/Si and Si isotope ratios as biogeochemical tracers

    NASA Astrophysics Data System (ADS)

    Cornelis, J.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

    2010-12-01

    solutions evolve towards lighter values (-1.38 and -2.05 ‰) and higher Ge/Si ratios (2.7 µmol/mol) relative to granite bedrock. This suggests a partial dissolution of 28Si and Ge-enriched secondary clays minerals incorporated by bioturbation in organic-rich horizons, with a fractionation releasing preferentially light Si isotopes. Without considering that organic acids promote dissolution of minerals, clay minerals detected in the organic layer (vermiculite, chlorite, illite and Ca-montmorillonite) are not stable and could have been partially dissolved and transformed in the chemical environment of forest floor. Sources of H4SiO4 in forest floor solutions are influenced by tree species which control the extent of clay-sized minerals mixed in organic horizons by bioturbation and, to a lesser extent, the Si recycling by forest vegetation.

  7. Stabilizing Nanosized Si Anodes with the Synergetic Usage of Atomic Layer Deposition and Electrolyte Additives for Li-Ion Batteries.

    PubMed

    Hy, Sunny; Chen, Yi-Hsiu; Cheng, Ho-Ming; Pan, Chun-Jern; Cheng, Ju-Hsiang; Rick, John; Hwang, Bing-Joe

    2015-07-01

    A substantial increase in charging capacity over long cycle periods was made possible by the formation of a flexible weblike network via the combination of Al2O3 atomic layer deposition (ALD) and the electrolyte additive vinylene carbonate (VC). Transmission electron microscopy shows that a weblike network forms after cycling when ALD and VC were used in combination that dramatically increases the cycle stability for the Si composite anode. The ALD-VC combination also showed reduced reactions with the lithium salt, forming a more stable solid electrolyte interface (SEI) absent of fluorinated silicon species, as evidenced by X-ray photoelectron spectroscopy. Although the bare Si composite anode showed only an improvement from a 56% to a 45% loss after 50 cycles, when VC was introduced, the ALD-coated Si anode showed an improvement from a 73% to a 11% capacity loss. Furthermore, the anode with the ALD coating and VC had a capacity of 630 mAh g(-1) after 200 cycles running at 200 mA g(-1), and the bare anode without VC showed a capacity of 400 mAh g(-1) after only 50 cycles. This approach can be extended to other Si systems, and the formation of this SEI is dependent on the thickness of the ALD that affects both capacity and stability.

  8. Spectral aspects of the determination of Si in organic and aqueous solutions using high-resolution continuum source or line source flame atomic absorption spectrometry

    NASA Astrophysics Data System (ADS)

    Kowalewska, Zofia; Pilarczyk, Janusz; Gościniak, Łukasz

    2016-06-01

    High-resolution continuum source flame atomic absorption spectrometry (HR-CS FAAS) was applied to reveal and investigate spectral interference in the determination of Si. An intensive structured background was observed in the analysis of both aqueous and xylene solutions containing S compounds. This background was attributed to absorption by the CS molecule formed in the N2O-C2H2 flame. The lines of the CS spectrum at least partially overlap all five of the most sensitive Si lines investigated. The 251.611 nm Si line was demonstrated to be the most advantageous. The intensity of the structured background caused by the CS molecule significantly depends on the chemical form of S in the solution and is the highest for the most-volatile CS2. The presence of O atoms in an initial S molecule can diminish the formation of CS. To overcome this S effect, various modes of baseline fitting and background correction were evaluated, including iterative background correction (IBC) and utilization of correction pixels (WRC). These modes were used either independently or in conjunction with least squares background correction (LSBC). The IBC + LSBC mode can correct the extremely strong interference caused by CS2 at an S concentration of 5% w:w in the investigated solution. However, the efficiency of this mode depends on the similarity of the processed spectra and the correction spectra in terms of intensity and in additional effects, such as a sloping baseline. In the vicinity of the Si line, three lines of V were recorded. These lines are well-separated in the HR-CS FAAS spectrum, but they could be a potential source of overcorrection when using line source flame atomic absorption spectrometry (LS FAAS). The expected signal for the 251.625 nm Fe line was not registered at 200 mg L- 1 Fe concentration in the solution, probably due to the diminished population of Fe atoms in the high-temperature flame used. The observations made using HR-CS FAAS helped to establish a "safe" level

  9. Na@SiO2-Mediated Addition of Organohalides to Carbonyl Compounds for the Formation of Alcohols and Epoxides

    NASA Astrophysics Data System (ADS)

    Kapoor, Mohit; Hwu, Jih Ru

    2016-11-01

    Alcohols and epoxides were generated by the addition of organohalides to carbonyl compounds in the presence of sodium metal impregnated with silica gel (Na@SiO2) in THF at 25 °C through a radical pathway. Under the same conditions, Schiff bases were also successfully converted to the corresponding amines. Furthermore, the reaction of aldehydes with α-haloesters or 4-(chloromethyl)-coumarin with the aid of Na@SiO2 generated trans epoxides. An unprecedented mechanism is proposed for their formation. The advantages associated with these new reactions include: (1) products are obtained in good-to-excellent yields, (2) reactions are completed at room temperatures in a short period of time (<2.0 h), (3) it is unnecessary to perform the reactions under anhydrous conditions, and (4) the entire process requires only simple manipulations.

  10. Na@SiO2-Mediated Addition of Organohalides to Carbonyl Compounds for the Formation of Alcohols and Epoxides

    PubMed Central

    Kapoor, Mohit; Hwu, Jih Ru

    2016-01-01

    Alcohols and epoxides were generated by the addition of organohalides to carbonyl compounds in the presence of sodium metal impregnated with silica gel (Na@SiO2) in THF at 25 °C through a radical pathway. Under the same conditions, Schiff bases were also successfully converted to the corresponding amines. Furthermore, the reaction of aldehydes with α-haloesters or 4-(chloromethyl)-coumarin with the aid of Na@SiO2 generated trans epoxides. An unprecedented mechanism is proposed for their formation. The advantages associated with these new reactions include: (1) products are obtained in good-to-excellent yields, (2) reactions are completed at room temperatures in a short period of time (<2.0 h), (3) it is unnecessary to perform the reactions under anhydrous conditions, and (4) the entire process requires only simple manipulations. PMID:27853277

  11. Additivity of kinetic and potential energy contributions in modification of graphene supported on SiO2

    NASA Astrophysics Data System (ADS)

    Zhang, Xitong; Zhao, Shijun; Wang, Yuyu; Xue, Jianming

    2017-04-01

    The damage production induced by MeV highly charged ions (HCI) irradiations in graphene supported on a SiO2 substrate is investigated using molecular dynamics method. We get results in agreement with our recent experiments. We find that the electronic energy loss and potential energy deposition have similar effects on the defects creation in SiO2 substrate-supported graphene and both mechanisms of energy deposition seem to contribute in an additive way. The influences of the energy deposition depth and radius are studied. Only the energy deposited below the surface within 2.5 nm will induce the damage in graphene. Hence, the HCI can be a powerful tool to induce defects in graphene without causing deep damage of the substrate. When charge of incident Xeq+ is above 30, a nanopore is formed and the size of nanopore in graphene can be controlled by changing the incident charge state.

  12. Temperature dependence of a microstructured SiC coherent thermal source

    NASA Astrophysics Data System (ADS)

    Hervé, Armande; Drévillon, Jérémie; Ezzahri, Younès; Joulain, Karl; De Sousa Meneses, Domingos; Hugonin, Jean-Paul

    2016-09-01

    By ruling a grating on a polar material that supports surface phonon-polaritons such as silicon carbide (SiC), it is possible to create directional and monochromatic thermal sources. So far, most of the studies have considered only materials with room temperature properties as the ones tabulated in Palik's handbooks. Recently, measurements have provided experimental data of the SiC dielectric function at different temperatures. Here we study, numerically, the effect of the temperature dependence of the dielectric function on the thermal emission of SiC gratings (1D grating, in a first approach), heated at different temperatures. When materials are heated, the position of the grating emissivity peak shifts towards higher wavelength values. A second consequence of the temperature dependence of optical properties is that room temperature designed gratings are not optimal for higher temperatures. However, by modifying the grating parameters, it is possible to find an emission peak, with a maximum of emissivity near 1, for each temperature. We tried first to catch some patterns in the emissivity variation. Then, we obtained a grating, which leads to an optimum emissivity for all available temperature data for SiC.

  13. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  14. Structure and high-temperature properties of Ti5Si3 with interstitial additions

    SciTech Connect

    Williams, Jason

    1999-12-01

    This study was motivated by the fact that previous research on the structure and properties of Ti5Si3 showed unacceptably inconsistent results. The primary reason for these inconsistencies was interstitial contamination of Ti5Si3 by carbon, nitrogen and oxygen. Thus, this study measured the effects that these interstitial atoms have on some of the previously reported properties. These properties include crystalline structure, thermal expansion anisotropy, electronic structure and bonding, and high temperature oxidation resistance. In Chapter 2 of this study, the lattice parameters and atomic positions of Ti5Si3 as a function of carbon, nitrogen or oxygen content were measured via x-ray and neutron diffraction. Comparing these lattice parameters to those reported in other studies on supposedly pure Ti5Si3 confirmed that the majority of the previous studies had samples with a considerable amount of interstitial impurities. In fact, the lattice parameter trends given in Chapter 2 can be used to estimate the types and level of impurities in these studies. Furthermore, Chapter 2 discusses how atomic positions change as interstitial atoms are incorporated into the lattice. These changes in atomic separations suggest that strong bonds form between the interstitial atoms and the surrounding titanium atoms. This is in full agreement with the electronic structure calculations given in Chapter 4. These calculations show that bonding does occur between titanium d-states and interstitial atom p-states at the expense of bonding between some of the titanium and silicon atoms. In addition, carbon seems to be the most strongly bonded interstitial atom. Knowledge of the exact interstitial content and its effect on bonding is important because Chapters 3 and 5 have shown that interstitial atoms have a marked effect on the thermal expansion and oxidation resistance. As discussed in Chapter 3, all

  15. Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

    NASA Astrophysics Data System (ADS)

    Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M. A.; Akhter, J. I.

    2011-06-01

    Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

  16. Influence of Li-B-Si Additions on the Sintering and Microwave Dielectric Properties of Ba-Nd-Ti Ceramics

    NASA Astrophysics Data System (ADS)

    Li, Enzhu; Duan, Shuxin; Sun, Shumeng; Li, Hao; Mi, Yuean; Zhou, Xiaohua; Zhang, Shuren

    2013-12-01

    Li2O-B2O3-SiO2 (LBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for tungsten-bronze-type Ba4Nd9.3Ti18O54 (BNT) ceramic. The effects of LBS additions on the sintering behaviors, microstructures, and microwave dielectric properties of the BNT ceramic have been investigated, indicating that LBS addition obviously lowered the sintering temperature of the BNT ceramic without damaging its microwave dielectric properties. BNT ceramic doped with 3 wt.% and 4 wt.% LBS addition could be well sintered at 975°C and 950°C for 3 h and had excellent properties: ɛ r = 65.99, Q × f = 4943 GHz ( f = 4.4 GHz), τ f = 19 ppm/°C, and ɛ r = 64.56, Q × f = 4929 GHz ( f = 4.3 GHz), τ f = 11 ppm/°C, respectively.

  17. Mechanism of the addition of nonenolizable aldehydes and ketones to (Di)metallenes (R(2)X=YR(2), X = Si, Ge Y = C, Si, Ge): a density functional and multiconfigurational perturbation theory study.

    PubMed

    Mosey, Nicholas J; Baines, Kim M; Woo, Tom K

    2002-11-06

    The mechanism of the addition of nonenolizable aldehydes and ketones to group 14 (di)metallenes has been examined through a theoretical study of the addition of formaldehyde to Si=C, Ge=C, Si=Si, Si=Ge, and Ge=Ge bonds at the B3LYP/6-311++G(d,p) and CAS-MCQDPT2/6-31++G(d,p) levels of theory. The reaction pathways located can be grouped as either involving the formation of singlet diradical or zwitterionic intermediates or as concerted processes. Within each group of reaction pathways, several different mechanisms have been located, with not all mechanisms being available to all of the (di)metallenes. It was found that for reactions in which a Si-O bond results (i.e., addition to Si=C, Si=Si, and Si=Ge) both diradical and zwitterionic intermediates are possible; however, the formation of diradical intermediates was not found for reactions that result in the formation of a Ge-O bond (addition to Ge=C and Ge=Ge). The underlying cause of this pathway selectivity is examined, as well as the effect of solvent on the relative energies of the pathways. The results of the study shed light on the cause of experimentally obtained results regarding the mechanism of the reaction of (di)metallenes with nonenolizable ketones and aldehydes.

  18. Reduction in secondary dendrite arm spacing in cast eutectic Al-Si piston alloys by cerium addition

    NASA Astrophysics Data System (ADS)

    Ahmad, R.; Asmael, M. B. A.; Shahizan, N. R.; Gandouz, S.

    2017-01-01

    The effects of Ce on the secondary dendrite arm spacing (SDAS) and mechanical behavior of Al-Si-Cu-Mg alloys were investigated. The reduction of SDAS at different Ce concentrations was evaluated in a directional solidification experiment via computer-aided cooling curve thermal analysis (CA‒CCTA). The results showed that 0.1wt%-1.0wt% Ce addition resulted in a rapid solidification time, Δ t s, and low solidification temperature, Δ T S, whereas 0.1wt% Ce resulted in a fast solidification time, Δ t a-Al, of the α-Al phase. Furthermore, Ce addition refined the SDAS, which was reduced to approximately 36%. The mechanical properties of the alloys with and without Ce were investigated using tensile and hardness tests. The quality index ( Q) and ultimate tensile strength of (UTS) Al-Si-Cu-Mg alloys significantly improved with the addition of 0.1wt% Ce. Moreover, the base alloy hardness was improved with increasing Ce concentration.

  19. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  20. A fundamental study of the oxidation behavior of SI primary reference fuels with propionaldehyde and DTBP as an additive

    NASA Astrophysics Data System (ADS)

    Johnson, Rodney

    In an effort to combine the benefits of SI and CI engines, Homogeneous Charge Compression Ignition (HCCI) engines are being developed. HCCI combustion is achieved by controlling the temperature, pressure, and composition of the fuel and air mixture so that autoignition occurs in proper phasing with the piston motion. This control system is fundamentally more challenging than using a spark plug or fuel injector to determine ignition timing as in SI and CI engines, respectively. As a result, this is a technical barrier that must be overcome to make HCCI engines applicable to a wide range of vehicles and viable for high volume production. One way to tailor the autoignition timing is to use small amounts of ignition enhancing additives. In this study, the effect of the addition of DTBP and propionaldehyde on the autoignition behavior of SI primary reference fuels was investigated. The present work was conducted in a new research facility built around a single cylinder Cooperative Fuels Research (CFR) octane rating engine but modified to run in HCCI mode. It focused on the effect of select oxygenated hydrocarbons on hydrocarbon fuel oxidation, specifically, the primary reference fuels n-heptane and iso-octane. This work was conducted under HCCI operating conditions. Previously, the operating parameters for this engine were validated for stable combustion under a wide range of operating parameters such as engine speeds, equivalence ratios, compression ratios and inlet manifold temperature. The stable operating range under these conditions was recorded and used for the present study. The major focus of this study was to examine the effect of the addition of DTBP or propionaldehyde on the oxidation behavior of SI primary reference fuels. Under every test condition the addition of the additives DTBP and propionaldehyde caused a change in fuel oxidation. DTBP always promoted fuel oxidation while propionaldehyde promoted oxidation for lower octane number fuels and delayed

  1. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    PubMed

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-01

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  2. The Influence of Sintering Temperature on the Microwave Dielectric Properties of Mg2SiO4 Ceramics with CaO-B2O3-SiO2 Addition

    NASA Astrophysics Data System (ADS)

    Yang, Hongyu; Li, Enzhu; Sun, Chengli; Duan, Shuxin; Yuan, Ying; Tang, Bin

    2017-02-01

    Conventional solid-state methods were used to synthesize Mg2SiO4 ceramic at relatively low sintering temperatures with the assistance of CaO-B2O3-SiO2 (CBS) glass. The effects of the CBS additions on the sintering behavior, crystal structures, microstructures, and microwave dielectric properties of Mg2SiO4 ceramic have been investigated in detail. The results indicate that the addition of CBS glass lowered the sintering temperature of Mg2SiO4 ceramic significantly. The Mg2SiO4 ceramic with 7 wt.% CBS addition sintered at 1325°C for 4 h shows excellent microwave dielectric properties: ɛ r = 6.47, Q × f = 16,552 GHz, τ f = -23.34 ppm/°C.

  3. Development ceramic composites based on Al2O3, SiO2 and IG-017 additive

    NASA Astrophysics Data System (ADS)

    Kurovics, E.; Shmakova, A.; Kanev, B.; Gömze, L. A.

    2017-02-01

    Based on high purity alumina and quartz powders and IG-017 bio-original additives the authors have developed new ceramic composite materials for different industrial purposes. The main goal was to fine a material and morphological structures of high performance ceramic composites as frames for development complex materials for extreme consumptions in the future. For this the mixed powders of Al2O3 , SiO2 and IG-017 bio-original additive were uniaxially pressed at different compaction pressures into disc shapes and were sintered in electric kiln under air (1) and nitrogrn (2) atmosphere. The grain size distributions of the raw materials were determined by laser granulometry. There thermo-physical properties were also determined by derivatography. The prepared and sintered specimens were tested on geometrical sizes, microstructure and morphology by scanning electron microscopy, porosity and water absorption. In this work the authors present the results of their research and investigation.

  4. Photon-assisted field emission from a Si tip at addition of an AC low voltage

    NASA Astrophysics Data System (ADS)

    Zaporozhchenko, A. V.; Chernov, S. V.; Odnodvorets, L. V.; Stetsenko, B. V.; Nepijko, S. A.; Elmers, H. J.; Schönhense, G.

    2015-07-01

    We investigated the field emission current from a p-type silicon tip with large resistivity of 4 × 103 Ω cm for light illumination with a photon energy of 1.3 eV and tip-anode voltages of 0.7-5.0 kV. Additional AC voltage with amplitude 30-60 V and frequency varying in the range of 10-107 Hz was applied to the tip which resulted in variations of emission current. We investigated the dependence of this phenomenon on the AC signal parameters, light intensity and temperature. The resonant-like frequency dependence of the emission current is because the tip acts as a driven plasmonic resonator. The results represent an important step forward for the development of high-frequency display systems based on electron field emission.

  5. Effects of additional HONO sources on visibility over the North China Plain

    NASA Astrophysics Data System (ADS)

    Li, Ying; An, Junling; Gultepe, Ismail

    2014-09-01

    The objective of the present study was to better understand the impacts of the additional sources of nitrous acid (HONO) on visibility, which is an aspect not considered in current air quality models. Simulations of HONO contributions to visibility over the North China Plain (NCP) during August 2007 using the fully coupled Weather Research and Forecasting/Chemistry (WRF/Chem) model were performed, including three additional HONO sources: (1) the reaction of photo-excited nitrogen dioxide (NO * 2) with water vapor; (2) the NO2 heterogeneous reaction on aerosol surfaces; and (3) HONO emissions. The model generally reproduced the spatial patterns and diurnal variations of visibility over the NCP well. When the additional HONO sources were included in the simulations, the visibility was occasionally decreased by 20%-30% (3-4 km) in local urban areas of the NCP. Monthly-mean concentrations of NO{3/-}, NH{4/+}, SO{4/2-} and PM2.5 were increased by 20%-52% (3-11 μg m-3), 10%-38%, 6%-10%, and 6%-11% (9-17 μg m-3), respectively; and in urban areas, monthly-mean accumulationmode number concentrations (AMNC) and surface concentrations of aerosols were enhanced by 15%-20% and 10%-20%, respectively. Overall, the results suggest that increases in concentrations of PM2.5, its hydrophilic components, and AMNC, are key factors for visibility degradation. A proposed conceptual model for the impacts of additional HONO sources on visibility also suggests that visibility estimation should consider the heterogeneous reaction on aerosol surfaces and the enhanced atmospheric oxidation capacity due to additional HONO sources, especially in areas with high mass concentrations of NO x and aerosols.

  6. Enhanced luminescence properties of CaTiO(3):Pr(3+) phosphor with addition of SiO(2) by solid-state reaction.

    PubMed

    Chen, Rui; Chen, Donghua

    2014-06-05

    Red phosphors CaTiO3:Pr(3+) with addition of SiO2 were prepared by solid-state reaction technique (SS). The effect of SiO2 on the crystalline phase, surface morphology and luminescence properties of CaTiO3:Pr(3+) was studied by X-ray diffractometer, transmission electron microscope, brightness meter and photoluminescence spectrometer, respectively. The results indicated that the content of SiO2 has influence on luminescence intensity, initial brightness and persistent time of samples. The red phosphor CaTi0.5Si0.5O3:Pr(3+) exhibited the optimal luminescence properties.

  7. Beamforming for directional sources: additional estimator and evaluation of performance under different acoustic scenarios.

    PubMed

    Bouchard, Christian; Havelock, David I; Bouchard, Martin

    2011-04-01

    Beamforming is done with an array of sensors to achieve a directional or spatially-specific response by using a model of the arriving wavefront. Conventionally, a plane wave or point source model is used and this can cause decreased array gain or even total breakdown of beamforming when the source is directional. To avoid this, the authors proposed in recent work an alternative beamforming method which defines a set of "sub-beamformers," each designed to respond to a different spatial mode of the source. The outputs of the individual sub-beamformers are combined in a weighted sum to give an overall output of better quality than that of a monopole beamformer. This paper extends the previous work by introducing an additional estimator for the weighted sum and by presenting simulation results to demonstrate the relative performance of the proposed method and the different estimators for a directional source in the presence of diffuse noise, reverberation, and an interfering source. Gain optimization subject to a constraint on the white-noise gain with the proposed beamforming method is also introduced. Generally, when beamforming on directional sources, the proposed method outperforms beamforming with a point source model when the input signal-to-noise ratio (SNR) is 0 dB or higher.

  8. SiC detectors for radiation sources characterization and fast plasma diagnostic

    NASA Astrophysics Data System (ADS)

    Cannavò, A.; Torrisi, L.

    2016-09-01

    Semiconductor detectors based on SiC have been investigated to characterize the radiations (photons and particles) emitted from different sources, such as radioactive sources, electron guns, X-ray tubes and laser-generated plasmas. Detectors show high response velocity, low leakage current, high energy gap and high radiation hardness. Their high detection efficiency permits to use the detectors in spectroscopic mode and in time-of-flight (TOF) approach, generally employed to monitor low and high radiation fluxes, respectively. Using the laser start signal, they permit to study the properties of the generated plasma in vacuum by measuring accurately the particle velocity and energy using pulsed lasers at low and high intensities. Possible applications will be reported and discussed.

  9. Adsorption mechanisms of isoxazole and oxazole on Si(100)-2 × 1 surface: Si-N dative bond addition vs. [4+2] cycloaddition

    NASA Astrophysics Data System (ADS)

    Kumer Ghosh, Manik; Choi, Cheol Ho

    2011-12-01

    The surface reaction pathways of isoxazole and oxazole on Si(100)-2 × 1 surface were theoretically investigated. They both form a weakly bound Si-N dative bond adduct on Si(100)-2 × 1 surface. In the case of isoxazole, the barrierlessly formed Si-N adduct is the most important surface product, that cannot be easily converted into other species. On the other hand, a facile concerted [4+2]CC cycloaddition without involving the initial Si-N dative bond adduct was also found in the case of oxazole adsorption. The existence of Diels-Alder reactions is attributed to the particular arrangement of the two heteroatoms of oxazole in such a way that the two Si-C σ-bonds can be formed in a [4+2] fashion. In short, the unique geometric arrangements and electronegativity of these similar heteroatomic molecules yielded distinctively different surface reaction characteristics.

  10. Use of additional fission sources or scattering sources to model inward axial leakages in fast-reactor analysis

    SciTech Connect

    Grimm, K.N.; Meneghetti, D.

    1981-10-01

    When calculations of flux are done in less than three dimensions, bucklings are normally used to model leakages (flows) in the dimensions for which the flux is not calculated. If the net leakage for a given energy group is outward (positive), the buckling is positive, and buckling methods work well. However, if the new leakage for a given energy group is inward (negative), the buckling is negative and can lead to numerical instabilities (oscillations in the iterative flux calculation). This report discusses two equivalent nonbuckling methods to model inward leakages. One method (the chi/sub g/ method) models these incoming neutrons by additional fission sources. The other method (the ..sigma../sub s/(1 ..-->.. g) method) models them by increased downscatter sources. The derivation of the two methods is shown, and the flux spectra obtained by their use are compared with those obtained from two-dimensional (RZ) calculations.

  11. The Effect of Chilling and Ce Addition on the Microstructure and Mechanical Properties of Al-23Si Alloy

    NASA Astrophysics Data System (ADS)

    Vijeesh, V.; Narayan Prabhu, K.

    2017-01-01

    The present work involves the study of the effect of varying concentration of Ce addition on microstructure and mechanical properties of Al-23%Si alloys. Melt-treated alloys were solidified in copper, brass, stainless steel molds to assess the effect of cooling rate. The effect on microstructure was assessed by measuring the fineness of primary silicon and eutectic silicon particle characteristics. The Ce melt treatment transformed the coarse and irregular primary silicon into refined polyhedral silicon crystals, and the effect was more significant at higher cooling rates. Although the melt treatment had refined the eutectic silicon at lower cooling rates, it did not show any considerable effect on the eutectic silicon at higher cooling rates. The mechanical properties of the alloy increased significantly with increase in cooling rates and cerium concentration. Analysis of the results and literature reveals that the refined primary silicon was formed as a result of an invariant reaction between Ce compounds and primary silicon at higher temperatures.

  12. Carbon source utilization profiles suggest additional metabolic interactions in a synergistic linuron-degrading bacterial consortium.

    PubMed

    Horemans, Benjamin; Smolders, Erik; Springael, Dirk

    2013-04-01

    A bacterial triple-species consortium that synergistically metabolizes the phenylurea herbicide linuron was studied to determine whether synergy is extended toward the metabolism of other C-sources. The metabolic performance and range of the individual consortium members were compared with those of paired and three-species combinations in Biolog GN2 MicroPlate assays. The strain combinations showed an increase in the rate and extent of utilization of 80% of the C-sources that were utilized by either one or more of the individual consortium members and the additional utilization of eight C-sources for which oxidation was not observed for the individual strains. When one of the three strains was replaced by bacterial strains 'foreign' to the consortium, either belonging to the same genus or to other genera, mainly antagonistic effects occurred. The data suggest that the consortium members cooperate in the metabolism of C-sources in addition to linuron. This feature can contribute in consolidating consortium composition when linuron is absent or present at low concentrations.

  13. Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

    NASA Astrophysics Data System (ADS)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2016-05-01

    Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

  14. Effect of tin addition on the distribution of phosphorus and metallic impurities in Si-Al alloys

    NASA Astrophysics Data System (ADS)

    Tang, Tianyu; Lai, Huixian; Sheng, Zhilin; Gan, Chuanhai; Xing, Pengfei; Luo, Xuetao

    2016-11-01

    Metallurgical grade silicon was purified through solvent refining method by adding tin to the Si-Al alloy. The distribution of phosphorus and metallic impurities in the resulting Si-Al-Sn melts was investigated. Compared with the primary Si and the eutectic αAl+Si, the phosphorus and metallic impurities were more distinctly distributed in the βSn phase, which was always accompanied by needle-like intermetallic β-Al5SiFe compounds. To improve the phosphorus and metallic impurity removal ratios, Si-Al-Sn ternary alloys with different composition were investigated. The phosphorus removal ratio increased with the aluminum and tin content in the Si-Al-Sn ternary alloy. Compared to increasing the Al content and keeping the Si/Sn ratio fixed, the impurity removal ratios were higher when the Sn content was increased to the same mass percentage and the Si/Al ratio was kept fixed in the Si-Al-Sn melt.

  15. Effects of h-BN addition on microstructures and mechanical properties of β-CaSiO3 bioceramics.

    PubMed

    Pan, Ying; Yao, Dongxu; Zuo, Kaihui; Xia, Yongfeng; Yin, Jinwei; Liang, Hanqin; Zeng, Yuping

    2016-09-01

    The main purpose of this study consists in investigating the effects of h-BN addition on the sinterability of β-CaSiO3 (β-CS) bioceramics. β-CS bioceramics with different contents of h-BN were prepared at the sintering temperature ranging from 800°C to 1100°C. The results showed that h-BN can be successfully used as sintering additive by being oxidized to form low melting point B2O3 related glassy phase and enhanced the flexural strength by the formation of rod-like β-CS grains. β-CS bioceramics with 1wt% h-BN sintered at 1000°C revealed flexural strength and fracture toughness of 182.2MPa and 2.4MPam(1/2) respectively, which were much higher than that of pure β-CS bioceramics (30.2MPa, 0.53MPam(1/2)) fabricated in the same processing condition.

  16. Evaluating the time and source of hydrocarbon additions to soils using lead isotopes and historical changes in industrial lead sources

    SciTech Connect

    Hurst, R.W. California State Univ., Los Angeles, CA )

    1994-04-01

    Isotopic analysis of anthropogenic Pb in well-dated, southern California coastal sediments have been integrated with historical changes in ore Pb sources to produce calibration curves (206Pb/207Pb vs. time) that allow us to model the time anthropogenic Pb was added to a soil horizon. The major, historical sources of anthropogenic Pb in southern California are fossil fuels (e.g. gasoline). Hence, Pb model ages (LABILE model; Los Angeles Borderland Industrial Lead) provide time constraints on Pb deposition from fossil fuel combustion via airborne deposition, runoff, and/or sewage outfall in this region. The correlation between the LABILE model age and known times of anthropogenic Pb additions at 17 specific sites is good (r = 0.978); the accuracy of the method ranges from one to five years in the post-1960 time interval. Factors influencing accuracy include analytical uncertainties in Pb isotopic measurements ([<=]0.1%), the scatter in isotopic ratios of anthropogenic Pb (circa 0.2%), and the uncertainty in the sediment age used to calibrate the method (0-15 yr). At one site three statistically distinguishable events were identified; they correlate with residential development (1968), airborne vehicular Pb deposition (1983), and site remediation (1991). Gasoline incursions at two tests sites have been dated accurately ([+-] 1 yr). The limitations of the LABILE model (geographic, age, types of hydrocarbons, and industry to which it applies) are now under investigation.

  17. Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials.

    PubMed

    Wu, Jean-Yee; Lee, Cheng-Chung

    2006-05-20

    Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

  18. Evidence for an Additional Heat Source in the Warm Ionized Medium of Galaxies

    NASA Astrophysics Data System (ADS)

    Reynolds, R. J.; Haffner, L. M.; Tufte, S. L.

    1999-11-01

    Spatial variations of the [S II]/Hα and [N II]/Hα line intensity ratios observed in the gaseous halo of the Milky Way and other galaxies are inconsistent with pure photoionization models. They appear to require a supplemental heating mechanism that increases the electron temperature at low densities, ne. This would imply that in addition to photoionization, which has a heating rate per unit volume proportional to n2e, there is another source of heat with a rate per unit volume proportional to a lower power of ne. One possible mechanism is the dissipation of interstellar plasma turbulence, which, according to Minter & Spangler, heats the ionized interstellar medium in the Milky Way at a rate of ~1×10-25ne ergs cm-3 s-1. If such a source were present, it would dominate over photoionization heating in regions where ne<~0.1 cm-3, producing the observed increases in the [S II]/Hα and [N II]/Hα intensity ratios at large distances from the galactic midplane as well as accounting for the constancy of [S II]/[N II], which is not explained by pure photoionization. Other supplemental heating sources, such as magnetic reconnection, cosmic rays, or photoelectric emission from small grains, could also account for these observations, provided they supply ~10-5 ergs s-1 per square centimeter of the Galactic disk to the warm ionized medium.

  19. Accelerated Source-Encoding Full-Waveform Inversion with Additional Constraints

    NASA Astrophysics Data System (ADS)

    Boehm, C.; Fichtner, A.; Ulbrich, M.

    2014-12-01

    We present a flexible framework of Newton-type methods for constrained full-waveform inversion in the time domain. Our main goal is (1) to incorporate additional prior knowledge by using general constraints on the model parameters and (2) to reduce the computational costs of solving the inverse problem by tailoring source-encoding strategies to Newton-type methods.In particular, we apply the Moreau-Yosida regularization to handle the constraints and use a continuation strategy to adjust the regularization parameter. Furthermore, we propose a semismooth Newton method with a trust-region globalization that relies on second-order adjoints to compute the Newton system with a matrix-free preconditioned conjugate gradient solver. The costs of conventional FWI approaches scale proportionally with the number of seismic sources. Here, source-encoding strategies that trigger different sources simultaneously have been proven to be a successful tool to trade a small loss of information for huge savings of computational time to solve the inverse problem. This is particularly interesting for our setting as one iteration of Newton's methods using the full Hessian is considerably more expensive than quasi-Newton methods like L-BFGS. To this end, we discuss a sample average approximation model that is accelerated by using inexact Hessian information based on mini-batches of the samples. Furthermore, we compare its performance with stochastic descent schemes. Here, the classical stochastic gradient method is accelerated by an L-BFGS preconditioner and moreover, the stability of this stochastic preconditioner is enhanced by using the Hessian instead of only gradient information.Numerical results are presented for problems in geophysical exploration on reservoir-scale.

  20. Simultaneous Observatinos of H2O and SiO Masers Toward Known Extragalactic Water Maser Sources

    NASA Astrophysics Data System (ADS)

    Cho, Se-Hyung; Yoon, Dong-Hwan; Kim, Jaeheon; Byun, Do-Young; Wagner, Jan

    2015-12-01

    We observe ten known 22 GHz H_{2}O maser galaxies during February 19-22, 2011 using the 21 m Tamna telescope of the Korean VLBI Network and a new wide-band digital spectrometer. Simultaneously we searched for 43 GHz SiO v = 1, 2, J = 1-0 maser emission. We detect H_{2}O maser emission towards five sources (M 33, NGC 1052, NGC 1068, NGC 4258, M 82), with non-detections towards the remaining sources (UGC 3193, UGC 3789, Antennae H_{2}O-West, M 51, NGC 6323) likely due to sensitivity. Our 22 GHz spectra are consistent with earlier findings. Our simultaneous 43 GHz SiO maser search produced non-detections, yielding - for the first time - upper limits on the 43 GHz SiO maser emission in these sources at a 3 σ sensitivity level of 0.018 K-0.033 K (0.24 Jy-0.44 Jy) in a 1.75 km s^{-1} velocity resolution. Our findings suggest that any 43 GHz SiO masers in these sources (some having starburst-associated H_{2}O kilomasers) must be faint compared to the 22 GHz H_{2}O maser emission.

  1. A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing

    SciTech Connect

    Chinthavali, Madhu Sudhan; Ayers, Curtis William; Campbell, Steven L; Wiles, Randy H; Ozpineci, Burak

    2014-01-01

    With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. This paper focuses on the development of a 10-kW all SiC inverter using a high power density, integrated printed metal power module with integrated cooling using additive manufacturing techniques. This is the first ever heat sink printed for a power electronics application. About 50% of the inverter was built using additive manufacturing techniques.

  2. Statistical addition method for external noise sources affecting HF-MF-LF systems

    NASA Astrophysics Data System (ADS)

    Neudegg, David

    2001-01-01

    The current statistical method for the addition of external component noise sources in the LF, MF, and lower HF band (100 kHz to 3 MHz) produces total median noise levels that may be less than the largest-component median in some cases. Several case studies illustrate this anomaly. Methods used to sum the components rely on their power (decibels) distributions being represented as normal by the statistical parameters. The atmospheric noise component is not correctly represented by its decile values when it is assumed to have a normal distribution, causing anomalies in the noise summation when components are similar in magnitude. A revised component summation method is proposed, and the way it provides a more physically realistic total noise median for LF, MF, and lower HF frequencies is illustrated.

  3. SEI Formation and Interfacial Stability of a Si Electrode in a LiTDI-Salt Based Electrolyte with FEC and VC Additives for Li-Ion Batteries.

    PubMed

    Lindgren, Fredrik; Xu, Chao; Niedzicki, Leszek; Marcinek, Marek; Gustafsson, Torbjörn; Björefors, Fredrik; Edström, Kristina; Younesi, Reza

    2016-06-22

    An electrolyte based on the new salt, lithium 4,5-dicyano-2-(trifluoromethyl)imidazolide (LiTDI), is evaluated in combination with nano-Si composite electrodes for potential use in Li-ion batteries. The additives fluoroethylene carbonate (FEC) and vinylene carbonate (VC) are also added to the electrolyte to enable an efficient SEI formation. By employing hard X-ray photoelectron spectroscopy (HAXPES), the SEI formation and the development of the active material is probed during the first 100 cycles. With this electrolyte formulation, the Si electrode can cycle at 1200 mAh g(-1) for more than 100 cycles at a coulombic efficiency of 99%. With extended cycling, a decrease in Si particle size is observed as well as an increase in silicon oxide amount. As opposed to LiPF6 based electrolytes, this electrolyte or its decomposition products has no side reactions with the active Si material. The present results further acknowledge the positive effects of SEI forming additives. It is suggested that polycarbonates and a high LiF content are favorable components in the SEI over other kinds of carbonates formed by ethylene carbonate (EC) and dimethyl carbonate (DMC) decomposition. This work thus confirms that LiTDI in combination with the investigated additives is a promising salt for Si electrodes in future Li-ion batteries.

  4. Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

    PubMed

    Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

    2015-11-11

    Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

  5. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters

    PubMed Central

    Youh, Meng-Jey; Tseng, Chun-Lung; Jhuang, Meng-Han; Chiu, Sheng-Cheng; Huang, Li-Hu; Gong, Jyun-An; Li, Yuan-Yao

    2015-01-01

    A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%. PMID:26042359

  6. The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys.

    PubMed

    Gebhardt, T; Music, D; Ekholm, M; Abrikosov, I A; Vitos, L; Dick, A; Hickel, T; Neugebauer, J; Schneider, J M

    2011-06-22

    We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Néel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

  7. Addition of surfactants in ozonated water cleaning for the suppression of functional group formation and particle adhesion on the SiO2 surface

    NASA Astrophysics Data System (ADS)

    Yang, Jahyun; Im, Kyungtaek; Lim, Sangwoo

    2011-04-01

    Various kinds of surfactants were added to a cleaning solution and deionized (DI) water, and their effect on the suppression of organic function group formation and particle adhesion to a SiO2 surface was analyzed using multi-internal reflection Fourier transform infrared spectroscopy. The results implied that attached organic functional groups are affected by the chemical structure of a surfactant in DI water. Furthermore, the addition of anionic glycolic acid ethoxylate 4-tert-butylphenyl ether (GAE4E) is the most effective in terms of preventing organic group attachment and particle adhesion to the SiO2 surface, whether it was added to the cleaning solution or post-cleaning rinse water, with or without polystyrene latex particles. Moreover, it was possible to completely prevent particle adhesion to the SiO2 surface with the proper addition of GAE4E in DIO3 solution.

  8. On the Asymmetric Splitting of CBED HOLZ Lines under the Gate of Recessed SiGe Source/Drain Transistors

    NASA Astrophysics Data System (ADS)

    Benedetti, A.; Bender, H.

    The behaviour of the CBED HOLZ line splitting under the gate of transistor structures with recessed SiGe in the source/drain regions is investigated. Structures with nitride/oxide dummy gates or with poly gates and nitride spacers are studied. In the gate region as well as below the SiGe, splitting of the HOLZ lines in the CBED patterns is observed with increasing magnitude towards the interface. The splitting under the gate shows an asymmetry for equivalent lines which inverts along horizontal cutlines under the gate. The behaviour is explained by a 3-dimensional relaxation of the stress.

  9. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    NASA Astrophysics Data System (ADS)

    Chen, Dongyue; Murakami, Kenta; Dohi, Kenji; Nishida, Kenji; Soneda, Naoki; Li, Zhengcao; Liu, Li; Sekimura, Naoto

    2015-12-01

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe2+ ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si's role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  10. Analytical methods for SiO2 and other inorganic oxides in titanium dioxide or certain silicates for food additive specifications.

    PubMed

    Mutsuga, Motoh; Sato, Kyoko; Hirahara, Yoshichika; Kawamura, Yoko

    2011-04-01

    An analytical method has been developed for the detection of SiO(2) and other oxides in titanium dioxide and certain silicates used in food additives using inductively coupled plasma (ICP) atomic emission spectrometry without hydrofluoric acid. SiO(2) and other oxides in titanium dioxide or certain silicates were resolved by alkali fusion with KOH and boric acid and then dissolved in dilute hydrochloric acid as a test solution for ICP. The recovery of SiO(2) and Al(2)O(3) added at 0.1 and 1.0%, respectively, in TiO(2) was 88-104%; coefficient of variation was <4%. The limit of determination of SiO(2) and Al(2)O(3) was about 0.08%, and the accuracy of the ICP method was better than that of the Joint FAO/WHO Expert Committee on Food Additives (JECFA) test method. The recovery of SiO(2) and other oxides in silicates was 95-107% with a coefficient of variation of <4%. Using energy dispersive X-ray fluorescence spectrometry (EDX) with fundamental parameter determination, the content of SiO(2) and other oxide in titanium dioxide and silicate showed good agreement with the ICP results. ICP with alkali fusion proved suitable as a test method for SiO(2), Al(2)O(3) and other oxides in titanium dioxide and certain silicates, and EDX proves useful for screening such impurities in titanium dioxide and componential analysis of certain silicates.

  11. InCl3/Me3SiCl-catalyzed direct Michael addition of enol acetates to α,β-unsaturated ketones.

    PubMed

    Onishi, Yoshiharu; Yoneda, Yuki; Nishimoto, Yoshihiro; Yasuda, Makoto; Baba, Akio

    2012-11-16

    The direct Michael addition of enol acetates to α,β-unsaturated ketones was achieved using a combination of Lewis acid catalysts, InCl(3) and Me(3)SiCl, which furnished stable enol-form products that could be further transformed into functionalized 1,5-diketones by reactions with various electrophiles.

  12. Effect of SiC and Graphite Particulates Addition on Wear Behaviour of Al2219 Alloy Hybrid Composites

    NASA Astrophysics Data System (ADS)

    Nagaral, Madeva; Shivananda, B. K.; Jayachandran; Auradi, V.; Kori, S. A.

    2016-09-01

    In this investigation wear behaviour of A12219 alloy reinforced with SiC and graphite particulates were studied. The percentage of silicon carbide and graphite as reinforcements were varied from 2 wt.% to 4 wt.% in steps of 2. Energy dispersive spectroscopy and scanning electron microphotographs were used to confirm the presence of SiC and graphite particulates and its uniform distribution over the aluminum matrix. Wear behaviour of aluminum alloy Al2219 reinforced with silicon carbide and graphite fabricated by stir casting process was investigated. The wear properties of the metal matrix composites were studied by performing dry sliding wear test using a pin-on-disc wear tester. The experiments were conducted at a constant sliding velocity of 1.73m/s over a load of 2kg. The results showed that the wear resistance of Al2219-2%SiC-2% graphite and Al2219-4%SiC-4% graphite composites were better than the unreinforced alloy. The wear in terms of weight loss and wear rate was found to decrease with the increasing the weigh percentages of SiC and graphite. To study the dominant sliding wear mechanism worn surfaces were analyzed using scanning electron microscopy.

  13. Improving High-Temperature Tensile and Low-Cycle Fatigue Behavior of Al-Si-Cu-Mg Alloys Through Micro-additions of Ti, V, and Zr

    NASA Astrophysics Data System (ADS)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2015-07-01

    High-temperature tensile and low-cycle fatigue tests were performed to assess the influence of micro-additions of Ti, V, and Zr on the improvement of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in the as-cast condition. Addition of transition metals led to modification of microstructure where in addition to conventional phases present in the Al-7Si-1Cu-0.5Mg base, new thermally stable micro-sized Zr-Ti-V-rich phases Al21.4Si4.1Ti3.5VZr3.9, Al6.7Si1.2TiZr1.8, Al2.8Si3.8V1.6Zr, and Al5.1Si35.4Ti1.6Zr5.7Fe were formed. The tensile tests showed that with increasing test temperature from 298 K to 673 K (25 °C to 400 °C), the yield stress and tensile strength of the present studied alloy decreased from 161 to 84 MPa and from 261 to 102 MPa, respectively. Also, the studied alloy exhibited 18, 12, and 5 pct higher tensile strength than the alloy A356, 354 and existing Al-Si-Cu-Mg alloy modified with additions of Zr, Ti, and Ni, respectively. The fatigue life of the studied alloy was substantially longer than those of the reference alloys A356 and the same Al-7Si-1Cu-0.5Mg base with minor additions of V, Zr, and Ti in the T6 condition. Fractographic analysis after tensile tests revealed that at the lower temperature up to 473 K (200 °C), the cleavage-type brittle fracture for the precipitates and ductile fracture for the matrix were dominant while at higher temperature fully ductile-type fracture with debonding and pull-out of cracked particles was identified. It is believed that the intermetallic precipitates containing Zr, Ti, and V improve the alloy performance at increased temperatures.

  14. Effect of C and Ce addition on the microstructure and magnetic property of the mechanically alloyed FeSiBAlNi high entropy alloys

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Axinte, Eugen; Zhao, Zhengfeng; Wang, Yan

    2016-09-01

    The effects of elemental addition, C and Ce, on the microstructure, thermal property and magnetic property of mechanically alloyed FeSiBAlNi (based-W5) high entropy alloys (HEAs) have been investigated in depth in the present work. The amorphous HEAs have been successfully fabricated by mechanical alloying. The results reveal that Ce addition obviously shortens the formation time of fully amorphous phase, therefore leading to the enhanced glass forming ability (GFA) of the based-W5. The final products of as-milled FeSiBAlNiC alloy consist of the main amorphous phase and a small amount of Si nanocrystals. In addition, C and Ce addition are both beneficial to enhance the thermal stability. The coercivity force (Hc) of the tested samples lies in the range of 50-378 Oe, suggesting the semi-hard magnetic property. The saturation magnetization (Ms) becomes decreased with increasing the milling time. C addition effectively increases Ms exhibiting the good magnetic property, however, Ce addition presents the negative effect. It should be noted that the amorphous phase tends to be formed when the radius ratio (Rr) is larger than 1, and the GFA is enhanced with increasing Rr and valence electron concentration.

  15. Elite sport is not an additional source of distress for adolescents with high stress levels.

    PubMed

    Gerber, Markus; Holsboer-Trachsler, Edith; Pühse, Uwe; Brand, Serge

    2011-04-01

    This study examined whether participation in elite sport interacts with stress in decreasing or increasing symptoms of depression and anxiety among adolescents, and further, whether the interplay between participation in high-performance sport and stress is related to the perceived quality of sleep. 434 adolescents (278 girls, 156 boys; age: M = 17.2 yr.) from 15 "Swiss Olympic Sport Classes" and 9 conventional classes answered a questionnaire and completed a 7-day sleep log. Analyses of covariance showed that heightened stress was related to more depressive symptoms and higher scores for trait-anxiety. Moreover, those classified as having poor sleep by a median split cutoff reported higher levels of depressive symptoms. No significant (multivariate) main effects were found for high-performance sport athletes. Similarly, no significant two- or three-way interaction effects were found. These results caution against exaggerated expectations concerning sport participation as a stress buffer. Nevertheless, participation in high-performance sport was not found to be an additional source of distress for adolescents who reported high stress levels despite prior research that has pointed toward such a relationship.

  16. Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Lee, C. Y.; Nam, H. S.; Lee, J. G.; Yang, H. J.; Ho, W. J.; Jeong, J. Y.; Koo, D. H.

    2011-11-01

    A Cu alloy/Cu alloy oxide bilayer structure was formed on an n +-a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O2/Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide-a-Si:H interface. This bilayer turned into an SiO x /Cu3Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.

  17. Development of a Mo-Si-B coating for Nb-based Alloys and the Effects of Zr Additions to Mo-Si-B Coatings for Enhanced Oxidation Protection in Ultra-High Temperature Applications

    NASA Astrophysics Data System (ADS)

    Lu-Steffes, Otto John

    Higher efficiencies and reduced emissions performance of fossil fuel energy systems are achieved with increasing operation temperatures. This increase in operating temperature requires the use of materials with higher melting points such as refractory metal alloys. However, refractory metals suffer from catastrophic oxidation in this type of environment. Thus, oxidation protection for refractory metal alloys is a crucial step in developing next generation ultra-high temperature materials. To meet this challenge, an oxidation resistant coating for Nb based alloys has been designed as well as the incorporation of zirconium into the Mo-Si-B coating to provide further corrosion protection and a reduction in temperature for the underlying multi-layered structure. Niobium samples coated with a Mo-Si-B coating demonstrate enhanced oxidation protection compared to samples only coated with Si-B. Thermogravimetric analysis testing at 1300°C for 24 hours for both the Mo-Si-B coated Nb and Nb-based alloys show enhanced oxidation protection with mass changes of 0.44 mg/cm2 and 0.55 mg/cm2, respectively, compared to the uncoated alloy that had a mass change of 87.6 mg/cm2. To demonstrate the design concept for a coating with thermal barrier behavior, Zr is added to the Mo-Si-B coating through the pack cementation technique. The resulting coating shows that the Zr reacts with the aluminosilica top layer to form Zr silicides and ZrO2. Upon oxidation, the coating forms a mixed top layer composed of borosilica, ZrO2 and ZrSiO 4. Oxidation testing of the Zr modified Mo-Si-B coating exhibits low mass change indicating that the coating provides oxidation protection and that the Zr additions do not interfere with the oxidation protection of the Mo-Si-B coating. Finite element modeling using object oriented finite element analysis of the coating structures yielded an evaluation of the mechanical and thermal properties of the coatings, providing insight into the thermal performance and

  18. Solar neutrinos and the influences of opacity, thermal instability, additional neutrino sources, and a central black hole on solar models

    NASA Technical Reports Server (NTRS)

    Stothers, R. B.; Ezer, D.

    1972-01-01

    Significant quantities that affect the internal structure of the sun are examined for factors that reduce the temperature near the sun's center. The four factors discussed are: opacity, central black hole, thermal instability, and additional neutrino sources.

  19. ADDITIONAL OBSERVATIONS OF PLANETS AND QUASI-STELLAR RADIO SOURCES AT 3 MM,

    DTIC Science & Technology

    MERCURY ( PLANET ), VENUS( PLANET ), PERIODIC VARIATIONS, RADIO ASTRONOMY, SPECTRUM SIGNATURES...EXTRATERRESTRIAL RADIO WAVES, SOURCES), GALAXIES, BLACKBODY RADIATION, BRIGHTNESS, TEMPERATURE, MARS( PLANET ), JUPITER( PLANET ), SATURN( PLANET

  20. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

    NASA Astrophysics Data System (ADS)

    Ho, Ching-Yuan; Chang, Yaw-Jen; Chiou, Y. L.

    2013-08-01

    The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected the carrier transport behavior. Under a high drain voltage, impact ionization was found as a large lateral field enhances carrier velocity. As gate voltage (Vg) increased, the difference in the drain current within a range of various temperature conditions can be mitigated because a high gate field lowers the SB height of a NiSi source/SiNW/NiSi drain junction to ensure efficient hot-carrier generation. By applying the Fowler-Nordheim programming voltage to the SONOS nanowire memory, the SB height (Φn = 0.34 eV) could be reduced by image force; thus, hot electrons could be injected from SB source/drain electrodes into the SiN storage node. To compare both SiNW and Si nanocrystal SONOS devices, the SB SiNW SONOS device was characterized experimentally to propose a wider threshold-voltage window, exhibiting efficient programming characteristics.

  1. Microstructure and hydrothermal corrosion behavior of NITE-SiC with various sintering additives in LWR coolant environments

    DOE PAGES

    Parish, Chad M.; Terrani, Kurt A.; Kim, Young -Jin; ...

    2016-11-28

    Nano-infiltration and transient eutectic phase (NITE) sintering was developed for fabrication of nuclear grade SiC composites. We produced monolithic SiC ceramics using NITE sintering, as candidates for accident-tolerant fuels in light-water reactors (LWRs). In this work, we exposed three different NITE chemistries (yttria-alumina [YA], ceria-zirconia-alumina [CZA], and yttria-zirconia-alumina [YZA]) to autoclave conditions simulating LWR coolant loops. The YZA was most corrosion resistant, followed by CZA, with YA being worst. High-resolution elemental analysis using scanning transmission electron microscopy (STEM) X-ray mapping combined with multivariate statistical analysis (MVSA) datamining helped explain the differences in corrosion. YA-NITE lost all Al from the corrodedmore » region and the ytttria reformed into blocky precipitates. The CZA material lost all Al from the corroded area, and the YZA – which suffered the least corrosion –retained some Al in the corroded region. Lastly, the results indicate that the YZA-NITE SiC is most resistant to hydrothermal corrosion in the LWR environment.« less

  2. Microstructure and hydrothermal corrosion behavior of NITE-SiC with various sintering additives in LWR coolant environments

    SciTech Connect

    Parish, Chad M.; Terrani, Kurt A.; Kim, Young -Jin; Koyanagi, Takaaki; Katoh, Yutai

    2016-11-28

    Nano-infiltration and transient eutectic phase (NITE) sintering was developed for fabrication of nuclear grade SiC composites. We produced monolithic SiC ceramics using NITE sintering, as candidates for accident-tolerant fuels in light-water reactors (LWRs). In this work, we exposed three different NITE chemistries (yttria-alumina [YA], ceria-zirconia-alumina [CZA], and yttria-zirconia-alumina [YZA]) to autoclave conditions simulating LWR coolant loops. The YZA was most corrosion resistant, followed by CZA, with YA being worst. High-resolution elemental analysis using scanning transmission electron microscopy (STEM) X-ray mapping combined with multivariate statistical analysis (MVSA) datamining helped explain the differences in corrosion. YA-NITE lost all Al from the corroded region and the ytttria reformed into blocky precipitates. The CZA material lost all Al from the corroded area, and the YZA – which suffered the least corrosion –retained some Al in the corroded region. Lastly, the results indicate that the YZA-NITE SiC is most resistant to hydrothermal corrosion in the LWR environment.

  3. Response of Mg Addition on the Dendritic Structures and Mechanical Properties of Hypoeutectic Al-10Si (Wt Pct) Alloys

    NASA Astrophysics Data System (ADS)

    Karaköse, Ercan; Yildiz, Mehmet; Keskin, Mustafa

    2016-08-01

    Rapidly solidified hypoeutectic Al-10Si- xMg ( x = 0, 5, 10 wt pct) alloys were produced by the melt-spinning method. The phase composition was identified by X-ray diffractometry, and the microstructures of the alloys were characterized by scanning electron microscopy. The melting characteristics were studied by differential scanning calorimetry and differential thermal analysis under an Ar atmosphere. The mechanical properties of the melt-spun and conventionally solidified alloys were tested by tensile-strength and Vickers microhardness tests. The results illustrate that the cooling rate and solidification time of 89 μm thick melt-spun ribbon were estimated to be 2.97 × 107 K s-1 and 9.31 × 10-6 s, respectively. Nanoscale Si spot particles were observed growing on the surface of the dendritic α-Al matrix and the average sizes of these spots ranged from 10 to 50 nm. The improvement in the tensile properties and microhardness was related to structural refinement and the supersaturated α-Al solid solution; the nanoscale-dispersed Si spot particles made a significant improvement to the mechanical properties of the melt-spun ribbon. Detailed electrical resistivity tests of the ribbons were carried out at temperatures of 300 K to 800 K (27 °C to 527 °C).

  4. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  5. Characterization of Ultra High Temperature Ceramics via Transmission Electron Microscopy. Part 2: UHTCs sintered with addition of TaSi2

    DTIC Science & Technology

    2010-01-21

    addition of silicides , such as MoSi2,15–17 has positive effects on the densification and mechanical properties of borides and carbides, even at...interest because of the excellent and unique combination of properties which make them attractive candidates for high temperature applications where...solutions, which, in turn affect the high temperature properties . The control of secondary phases composition is therefore of paramount importance

  6. Direct Syn Addition of Two Silicon Atoms to a C≡C Triple Bond by Si-Si Bond Activation: Access to Reactive Disilylated Olefins.

    PubMed

    Ahmad, Maha; Gaumont, Annie-Claude; Durandetti, Muriel; Maddaluno, Jacques

    2017-02-20

    A catalytic intramolecular silapalladation of alkynes affords, in good yields and stereoselectively, syn-disilylated heterocycles of different chemical structure and size. When applied to silylethers, this reaction leads to vinylic silanols that undergo a rhodium-catalyzed addition to activated olefins, providing the oxa-Heck or oxa-Michael products, depending on the reaction conditions.

  7. Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects

    SciTech Connect

    Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria

    2007-10-15

    We use classical molecular dynamics simulation techniques to study the regrowth behavior of amorphous pockets in Si. We demonstrate that crystallization depends on the morphology of the pocket-crystal interface. Although our simulated amorphous pockets had not any excess nor deficit of atoms with respect to perfect crystal, after regrowth we found residual defects. Most of them are single Si interstitials and vacancies, but also larger defects have been encountered. We have determined their atomic structures and calculated their formation energies. These complexes are more stable than amorphous pockets, and may trigger the formation of extended defects or favor damage accumulation.

  8. Meta-analysis on Methane Mitigating Properties of Saponin-rich Sources in the Rumen: Influence of Addition Levels and Plant Sources

    PubMed Central

    Jayanegara, Anuraga; Wina, Elizabeth; Takahashi, Junichi

    2014-01-01

    Saponins have been considered as promising natural substances for mitigating methane emissions from ruminants. However, studies reported that addition of saponin-rich sources often arrived at contrasting results, i.e. either it decreased methane or it did not. The aim of the present study was to assess ruminal methane emissions through a meta-analytical approach of integrating related studies from published papers which described various levels of different saponin-rich sources being added to ruminant feed. A database was constructed from published literature reporting the addition of saponin-rich sources at various levels and then monitoring ruminal methane emissions in vitro. Accordingly, levels of saponin-rich source additions as well as different saponin sources were specified in the database. Apart from methane, other related rumen fermentation parameters were also included in the database, i.e. organic matter digestibility, gas production, pH, ammonia concentration, short-chain fatty acid profiles and protozoal count. A total of 23 studies comprised of 89 data points met the inclusion criteria. The data obtained were subsequently subjected to a statistical meta-analysis based on mixed model methodology. Accordingly, different studies were treated as random effects whereas levels of saponin-rich source additions or different saponin sources were considered as fixed effects. Model statistics used were p-value and root mean square error. Results showed that an addition of increasing levels of a saponin-rich source decreased methane emission per unit of substrate incubated as well as per unit of total gas produced (p<0.05). There was a decrease in acetate proportion (linear pattern; p<0.001) and an increase in propionate proportion (linear pattern; p<0.001) with increasing levels of saponin. Log protozoal count decreased (p<0.05) at higher saponin levels. Comparing between different saponin-rich sources, all saponin sources, i.e. quillaja, tea and yucca saponins

  9. Effect of Mg/B ratio on the superconductivity of MgB2 bulk with SiC addition

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Dou, S. X.; Lu, C.; Zhou, S. H.; Li, W. X.

    2010-03-01

    To improve the self-field critical current density (Jc) and critical temperature (Tc) in SiC-doped MgB2 , optimization of the nominal Mg/B mixing ratio has been performed. The effects of the nominal Mg/B mixing ratio (x:2) on the superconductivity, Raman spectra, current transport properties, and flux pinning mechanisms in MgB2 with 10 wt.% SiC doping were investigated systematically, with x varied from 1 to 1.2. It has been found that the sample with the Mg/B ratio of 1.15:2 exhibited the best Jc performance for all fields (0-8.5 T), and its Tc was also enhanced. The optimized Mg/B ratio diminished the interband scattering caused by Mg or B vacancies, and in turn, increased Tc . The connectivity and disorder were increased in the Mg1.15B2 sample. Both of these were responsible for the improved Jc under all the fields examined.

  10. Additive Manufacturing of AlSi10Mg Alloy Using Direct Energy Deposition: Microstructure and Hardness Characterization

    NASA Astrophysics Data System (ADS)

    Javidani, M.; Arreguin-Zavala, J.; Danovitch, J.; Tian, Y.; Brochu, M.

    2016-12-01

    This paper aims to study the manufacturing of the AlSi10Mg alloy with direct energy deposition (DED) process. Following fabrication, the macro- and microstructural evolution of the as-processed specimens was initially investigated using optical microscopy and scanning electron microscopy. Columnar dendritic structure was the dominant solidification feature of the deposit; nevertheless, detailed microstructural analysis revealed cellular morphology near the substrate and equiaxed dendrites at the top end of the deposit. Moreover, the microstructural morphology in the melt pool boundary of the deposit differed from the one in the core of the layers. The remaining porosity of the deposit was evaluated by Archimedes' principle and by image analysis of the polished surface. Crystallographic texture in the deposit was also assessed using electron backscatter diffraction and x-ray diffraction analysis. The dendrites were unidirectionally oriented at an angle of 80° to the substrate. EPMA line scans were performed to evaluate the compositional variation and elemental segregation in different locations. Eventually, microhardness (HV) tests were conducted in order to study the hardness gradient in the as-DED-processed specimen along the deposition direction. The presented results, which exhibited a deposit with an almost defect free structure, indicate that the DED process can suitable for the deposition of Al-Si-based alloys with a highly consolidated structure.

  11. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source Provisions... SI internal combustion engines or a manufacturer of equipment containing such engines?...

  12. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source Provisions... SI internal combustion engines or a manufacturer of equipment containing such engines?...

  13. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source Provisions... SI internal combustion engines or a manufacturer of equipment containing such engines?...

  14. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source Provisions... SI internal combustion engines or a manufacturer of equipment containing such engines?...

  15. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source Provisions... SI internal combustion engines or a manufacturer of equipment containing such engines?...

  16. Impacts of carbon source addition on denitrification and phosphorus uptake in enhanced biological phosphorus removal systems.

    PubMed

    Begum, Shamim A; Batista, Jacimaria R

    2013-01-01

    In this study, simultaneous denitrification and phosphorus (P) removal were investigated in batch tests using nitrified mixed liquor and secondary wastewater influent from a full-scale treatment plant and different levels of acetate and propionate as supplemental carbon sources. Without supplemental carbon source, denitrification occurred at low rate and P release and P uptake was negatively affected (i.e., P removal of only 59.7%). When acetate and propionate were supplied, denitrification and P release occurred simultaneously under anoxic conditions. For acetate and propionate at a C/N stoichiometric ratio of 7.6, P release was negatively affected by denitrification. For acetate, the percent P removal and denitrification were very similar for C/N ratios of 22 (5X stoichiometric) and 59 (10X stoichiometric). For propionate, both percent P removal and denitrification deteriorated for C/N ratios of 22 (5X stoichiometric) and 45 (10X stoichiometric). It was observed that carbon source added in excess to stoichiometric ratio was consumed in the aerobic zone, but P was not taken up. This implies that PAO bacteria may utilize the excess carbon source in the aerobic zone rather than their polyhydroxyalkanoate (PHA) reserves, thereby promoting deterioration of the system.

  17. Measurement and Analysis of Porosity in Al-10Si-1Mg Components Additively Manufactured by Selective Laser Melting

    SciTech Connect

    Rao, Suraj; Cunningham, Ross; Ozturk, Tugce; Rollett, Anthony D.

    2016-10-18

    Aluminum alloys are candidate materials for weight critical applications because of their excellent strength and stiffness to weight ratio. However, defects such as voids decrease the strength and fatigue life of these alloys, which can limit the application of Selective Laser Melting. In this study, the average volume fraction, average size, and size distribution of pores in Al10-Si-1Mg samples built using Selective Laser Melting have been characterized. Synchrotron high energy X-rays were used to perform computed tomography on volumes of order one cubic millimeter with a resolution of approximately 1.5 μm. Substantial variations in the pore size distributions were found as a function of process conditions. Even under conditions that ensured that all locations were melted at least once, a significant number density was found of pores above 5 μm in diameter.

  18. Formation of deoxidization products in iron ingot by the addition of Al, Si, and/or Mn (M-5)

    NASA Technical Reports Server (NTRS)

    Fukazawa, Akira

    1993-01-01

    The objective of this work is to examine the morphology, composition, and distribution of deoxidation products in iron and iron-10 percent Ni alloy ingots. The deoxidation agents Si, Mn, Al, and their mixtures are selected to investigate the formation mechanism of the deoxidation products and to compare the differences of oxide formation among these agents in microgravity. After the experiment in space, the tested specimens are going to be analyzed by the use of the latest physical and/or chemical analytical equipment, and the information obtained will be a great help for the comprehension of the formation of oxide inclusion in steel for practical purposes, and also for the study of the solidification mechanism theory in the theoretical field.

  19. A FEATURE MOVIE OF SiO EMISSION 20-100 AU FROM THE MASSIVE YOUNG STELLAR OBJECT ORION SOURCE I

    SciTech Connect

    Matthews, L. D.; Greenhill, L. J.; Goddi, C.; Humphreys, E. M. L.; Chandler, C. J.; Kunz, M. W.

    2010-01-01

    We present multi-epoch Very Long Baseline Array imaging of the {sup 28}SiO v = 1 and v = 2, J = 1-0 maser emission toward the massive young stellar object (YSO) Orion Source I. Both SiO transitions were observed simultaneously with an angular resolution of approx0.5 mas (approx0.2 AU for d = 414 pc) and a spectral resolution of approx0.2 km s{sup -1}. Here we explore the global properties and kinematics of the emission through two 19-epoch animated movies spanning 21 months (from 2001 March 19 to 2002 December 10). These movies provide the most detailed view to date of the dynamics and temporal evolution of molecular material within approx20-100 AU of a massive (approx>8 M{sub sun}) YSO. As in previous studies, we find that the bulk of the SiO masers surrounding Source I lie in an X-shaped locus; the emission in the south and east arms is predominantly blueshifted, and emission in the north and west is predominantly redshifted. In addition, bridges of intermediate-velocity emission are observed connecting the red and blue sides of the emission distribution. We have measured proper motions of over 1000 individual maser features and found that these motions are characterized by a combination of radially outward migrations along the four main maser-emitting arms and motions tangent to the intermediate-velocity bridges. We interpret the SiO masers as arising from a wide-angle bipolar wind emanating from a rotating, edge-on disk. The detection of maser features along extended, curved filaments suggests that magnetic fields may play a role in launching and/or shaping the wind. Our observations appear to support a picture in which stars with masses as high as at least 8 M{sub sun} form via disk-mediated accretion. However, we cannot yet rule out that the Source I disk may have been formed or altered following a recent close encounter.

  20. Influences of Na2O and K2O Additions on Electrical Conductivity of CaO-MgO-Al2O3-SiO2 Melts

    NASA Astrophysics Data System (ADS)

    Zhang, Guo-Hua; Zheng, Wei-Wei; Chou, Kuo-Chih

    2017-01-01

    The present study investigated the influences of Na2O and K2O additions on electrical conductivity of blast furnace type CaO-MgO-Al2O3-SiO2 melts by the four-electrode method. Both the single addition of Na2O or K2O and the double additions of Na2O and K2O were studied. It was found that electrical conductivity monotonously increased as the amount of Na2O addition was gradually increased, whereas, when K2O was added, there was a continuous decrease of electrical conductivity. With melts containing both Na2O and K2O, electrical conductivity first decreased but then increased when Na2O was gradually substituted for K2O while keeping the molar fractions of other components constant. In other words, the mixed-alkali effect took place in CaO-Mg-Al2O3-SiO2-ΣR2O melts.

  1. Influences of Na2O and K2O Additions on Electrical Conductivity of CaO-MgO-Al2O3-SiO2 Melts

    NASA Astrophysics Data System (ADS)

    Zhang, Guo-Hua; Zheng, Wei-Wei; Chou, Kuo-Chih

    2017-04-01

    The present study investigated the influences of Na2O and K2O additions on electrical conductivity of blast furnace type CaO-MgO-Al2O3-SiO2 melts by the four-electrode method. Both the single addition of Na2O or K2O and the double additions of Na2O and K2O were studied. It was found that electrical conductivity monotonously increased as the amount of Na2O addition was gradually increased, whereas, when K2O was added, there was a continuous decrease of electrical conductivity. With melts containing both Na2O and K2O, electrical conductivity first decreased but then increased when Na2O was gradually substituted for K2O while keeping the molar fractions of other components constant. In other words, the mixed-alkali effect took place in CaO-Mg-Al2O3-SiO2-ΣR2O melts.

  2. A radio/optical reference frame. 5: Additional source positions in the mid-latitude southern hemisphere

    NASA Technical Reports Server (NTRS)

    Russell, J. L.; Reynolds, J. E.; Jauncey, D. L.; De Vegt, C.; Zacharias, N.; Ma, C.; Fey, A. L.; Johnston, K. J.; Hindsley, R.; Hughes, J. A.

    1994-01-01

    We report new accurate radio position measurements for 30 sources, preliminary positions for two sources, improved radio postions for nine additional sources which had limited previous observations, and optical positions and optical-radio differences for six of the radio sources. The Very Long Baseline Interferometry (VLBI) observations are part of the continuing effort to establish a global radio reference frame of about 400 compact, flat spectrum sources, which are evenly distributed across the sky. The observations were made using Mark III data format in four separate sessions in 1988-89 with radio telescopes at Tidbinbilla, Australia, Kauai, USA, and Kashima, Japan. We observed a total of 54 sources, including ten calibrators and three which were undetected. The 32 new source positions bring the total number in the radio reference frame catalog to 319 (172 northern and 147 southern) and fill in the zone -25 deg greater than delta greater than -45 deg which, prior to this list, had the lowest source density. The VLBI positions have an average formal precision of less than 1 mas, although unknown radio structure effects of about 1-2 mas may be present. The six new optical postion measurements are part of the program to obtain positions of the optical counterparts of the radio reference frame source and to map accurately the optical on to the radio reference frames. The optical measurements were obtained from United States Naval Observatory (USNO) Black Birch astrograph plates and source plates from the AAT, and Kitt Peak National Observatory (KPNO) 4 m, and the European Southern Observatory (ESO) Schmidt. The optical positions have an average precision of 0.07 sec, mostly due to the zero point error when adjusted to the FK5 optical frame using the IRS catalog. To date we have measured optical positions for 46 sources.

  3. Common genetic variants, acting additively, are a major source of risk for autism

    PubMed Central

    2012-01-01

    Background Autism spectrum disorders (ASD) are early onset neurodevelopmental syndromes typified by impairments in reciprocal social interaction and communication, accompanied by restricted and repetitive behaviors. While rare and especially de novo genetic variation are known to affect liability, whether common genetic polymorphism plays a substantial role is an open question and the relative contribution of genes and environment is contentious. It is probable that the relative contributions of rare and common variation, as well as environment, differs between ASD families having only a single affected individual (simplex) versus multiplex families who have two or more affected individuals. Methods By using quantitative genetics techniques and the contrast of ASD subjects to controls, we estimate what portion of liability can be explained by additive genetic effects, known as narrow-sense heritability. We evaluate relatives of ASD subjects using the same methods to evaluate the assumptions of the additive model and partition families by simplex/multiplex status to determine how heritability changes with status. Results By analyzing common variation throughout the genome, we show that common genetic polymorphism exerts substantial additive genetic effects on ASD liability and that simplex/multiplex family status has an impact on the identified composition of that risk. As a fraction of the total variation in liability, the estimated narrow-sense heritability exceeds 60% for ASD individuals from multiplex families and is approximately 40% for simplex families. By analyzing parents, unaffected siblings and alleles not transmitted from parents to their affected children, we conclude that the data for simplex ASD families follow the expectation for additive models closely. The data from multiplex families deviate somewhat from an additive model, possibly due to parental assortative mating. Conclusions Our results, when viewed in the context of results from genome

  4. Addition of dietary fiber sources to shakes reduces postprandial glycemia and alters food intake.

    PubMed

    Galvão Cândido, Flávia; Silva Ton, Winder Tadeu; Gonçalves Alfenas, Rita de Cássia

    2014-09-15

    Introducción: Obesidad y diabetes de tipo 2 pueden ser controlados por alimentos capaces de modular la ingesta de alimentos y la glucemia. Objetivos: Se investigó si la adición de alimentos fuentes de fibra o fasolamina a batidos puede controlar la ingesta de alimentos y reducir la glucemia posprandial. Métodos: Estudio aleatorizado, simple ciego, de diseño cruzado (ingesta de alimentos:n=22; glucemia:n=10). Cinco batidos con cantidades similares de macronutrientes (C - control batido, SA - salvado de avena batido, L - linaza batido, FB - extracto de frijol blanco batido y PI - harina de plátano no maduro batido) fueron consumidos en cinco días no consecutivos. Las participantes registraron la ingesta de alimentos en las 24 horas subsiguientes. La glucosa en sangre se midió a 0 (inmediatamente antes), 15, 30, 45, 60, 90 y 120 minutos después de la ingestión de cada batido y se calcularon las áreas incrementales bajo las curvas (AIBC). Resultados: En comparación a C, hubo un aumento significativo en la ingesta de fibra después de que el consumo de SA(+17,9g), SL(+19,1g), y PI(+12,6g), y en la grasa después del consumo de SA(+25,4g). Se encontró una reducción no significativa de la ingesta diaria de energía en L (1524kJ, P=0,10) en comparación con C. Hubo una reducción del 43% en el AIBC (P=0,03) en respuesta al consumo PI. Conclusiones: Harina de plátano no maduro reduce la respuesta glucémica posprandial de batidos casi a la mitad. El efecto de salvado de avena y linaza en la ingesta de alimentos requiere mayor investigación en estudios a largo plazo.

  5. Selective Laser Melting Additive Manufacturing of TiC/AlSi10Mg Bulk-form Nanocomposites with Tailored Microstructures and Properties

    NASA Astrophysics Data System (ADS)

    Gu, Dongdong; Wang, Hongqiao; Chang, Fei; Dai, Donghua; Yuan, Pengpeng; Hagedorn, Yves-Christian; Meiners, Wilhelm

    The nanoscale TiC particle reinforced AlSi10Mg nanocomposite parts were produced by selective laser melting (SLM) additive manufacturing process. The influence of laser energy density (LED) on densification behavior, microstructural evolution, microhardness and wear properties of SLM-processed TiC/AlSi10Mg nanocomposites was studied. It showed that the near fully dense nanocomposite parts (>98% theoretical density) were achieved with increasing the applied LED. The TiC reinforcement in SLM-processed parts experienced a microstructural change from the standard nanoscale particle morphology (the average size 77-93 nm) to the relatively coarsened submicron structure (the mean particle size 154 nm) as the LED increased.The sufficiently high densification rate combined with the homogeneousdistribution of nanoscale TiC reinforcement throughout the matrix led to a high microhardness of 181.2 HV0.2, a considerably low coefficient of friction (COF) of 0.36, and a reduced wear rate of 2.94×10-5 mm3N-1m-1 for SLM-processed TiC/AlSi10Mg nanocomposite parts.

  6. Reduction of CO2 diffuse emissions from the traditional ceramic industry by the addition of Si-Al raw material.

    PubMed

    González, I; Barba-Brioso, C; Campos, P; Romero, A; Galán, E

    2016-09-15

    The fabrication of ceramics can produce the emission of several gases, denominated exhaust gases, and also vapours resulting from firing processes, which usually contain metals and toxic substances affecting the environment and the health of workers. Especially harmful are the diffuse emissions of CO2, fluorine, chlorine and sulphur from the ceramics industry, which, in highly industrialized areas, can suppose an important emission focus of dangerous effects. Concerning CO2, factories that use carbonate-rich raw materials (>30% carbonates) can emit high concentrations of CO2 to the atmosphere. Thus, carbonate reduction or substitution with other raw materials would reduce the emissions. In this contribution, we propose the addition of Al-shales to the carbonated ceramic materials (marls) for CO2 emission reduction, also improving the quality of the products. The employed shales are inexpensive materials of large reserves in SW-Spain. The ceramic bodies prepared with the addition of selected Al-shale to marls in variable proportions resulted in a 40%-65% CO2 emission reduction. In addition, this research underlines at the same time that the use of a low-price raw material can also contribute to obtaining products with higher added value.

  7. Investigating the addition of SiO₂-CaO-ZnO-Na₂O-TiO₂ bioactive glass to hydroxyapatite: Characterization, mechanical properties and bioactivity.

    PubMed

    Yatongchai, Chokchai; Placek, Lana M; Curran, Declan J; Towler, Mark R; Wren, Anthony W

    2015-11-01

    Hydroxyapatite (Ca10(PO4)6(OH)2) is widely investigated as an implantable material for hard tissue restoration due to its osteoconductive properties. However, hydroxyapatite in bulk form is limited as its mechanical properties are insufficient for load-bearing orthopedic applications. Attempts have been made to improve the mechanical properties of hydroxyapatite, by incorporating ceramic fillers, but the resultant composite materials require high sintering temperatures to facilitate densification, leading to the decomposition of hydroxyapatite into tricalcium phosphate, tetra-calcium phosphate and CaO phases. One method of improving the properties of hydroxyapatite is to incorporate bioactive glass particles as a second phase. These typically have lower softening points which could possibly facilitate sintering at lower temperatures. In this work, a bioactive glass (SiO2-CaO-ZnO-Na2O-TiO2) is incorporated (10, 20 and 30 wt%) into hydroxyapatite as a reinforcing phase. X-ray diffraction confirmed that no additional phases (other than hydroxyapatite) were formed at a sintering temperature of 560 ℃ with up to 30 wt% glass addition. The addition of the glass phase increased the % crystallinity and the relative density of the composites. The biaxial flexural strength increased to 36 MPa with glass addition, and there was no significant change in hardness as a function of maturation. The pH of the incubation media increased to pH 10 or 11 through glass addition, and ion release profiles determined that Si, Na and P were released from the composites. Calcium phosphate precipitation was encouraged in simulated body fluid with the incorporation of the bioactive glass phase, and cell culture testing in MC-3T3 osteoblasts determined that the composite materials did not significantly reduce cell viability.

  8. Cytotoxicity of Au, ZnO and SiO₂ NPs using in vitro assays with mussel hemocytes and gill cells: Relevance of size, shape and additives.

    PubMed

    Katsumiti, Alberto; Arostegui, Inmaculada; Oron, Miriam; Gilliland, Douglas; Valsami-Jones, Eugenia; Cajaraville, Miren P

    2016-01-01

    Metal-bearing nanoparticles (NPs) possess unique physico-chemical characteristics that make them useful for an increasing number of industrial products and applications, but could also confer them a higher toxicity due to their higher reactivity compared to bulk forms of the same materials. There is a considerable interest in the use of in vitro techniques in environmentally relevant species, such as marine mussels, to evaluate NPs toxicity. In the present work, mussel hemocytes and gill cells were used to assess the potential toxic effects of Au, ZnO and SiO2 NPs with different sizes and shapes in parallel with their respective ionic and bulk forms and additives used in the NPs preparations. Cytotoxicity (neutral red and MTT assays) was screened at a wide range of concentrations, and LC50 values were calculated. Uptake of fluorescently labeled SIO2 NPs of 27 nm by hemocytes was also investigated. Au, ZnO and SiO2 NPs were less toxic than the corresponding ionic forms but more toxic than the bulk forms. ZnO NPs were the most toxic NPs tested which could be related with their capacity to release free ions. SiO2 NPs were not taken up by hemocytes and were not toxic to either hemocytes or gill cells. Size-dependent toxicity was found for Au NPs. Shape influenced the cytotoxicity of ZnO NPs. Finally, the presence of the additives Na-citrate and Ecodis P90 contributed to the toxicity of Au and ZnO NPs, respectively. As a general conclusion, solubility appears to play a key role in NPs toxicity to mussel cells.

  9. Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

    NASA Astrophysics Data System (ADS)

    Banu, Nasrin; Satpati, Biswarup; Bhukta, Anjan; Dev, B. N.

    2017-01-01

    Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (˜5 nm)/Ni(˜15 nm)/Si, grown in an ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence, ion beam mixing occurs and more and more Si is incorporated into the Ni layer, and this layer gets amorphized. At an even higher fluence, a recrystallized uniform nickel monosilicide (η-NiSi) layer is formed. Several planar spacings of different Miller indices of η-NiSi have been observed in XRD and TEM. Additionally, an interesting amorphization and recrystallization behavior has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. This kind of amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On a further increase in irradiation fluence, the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized, as well as amorphous Si, shows an oscillatory behavior as a function of ion fluence.

  10. Wood decomposition in Amazonian hydropower reservoirs: An additional source of greenhouse gases

    NASA Astrophysics Data System (ADS)

    Abril, Gwenaël; Parize, Marcelo; Pérez, Marcela A. P.; Filizola, Naziano

    2013-07-01

    Amazonian hydroelectric reservoirs produce abundant carbon dioxide and methane from large quantities of flooded biomass that decompose anaerobically underwater. Emissions are extreme the first years after impounding and progressively decrease with time. To date, only water-to-air fluxes have been considered in these estimates. Here, we investigate in two Amazonian reservoirs (Balbina and Petit Saut) the fate of above water standing dead trees, by combining a qualitative analysis of wood state and density through time and a quantitative analysis of the biomass initially flooded. Dead wood was much more decomposed in the Balbina reservoir 23 years after flooding than in the Petit Saut reservoir 10 years after flooding. Termites apparently played a major role in wood decomposition, occurring mainly above water, and resulting in a complete conversion of this carbon biomass into CO2 and CH4 at a timescale much shorter than reservoir operation. The analysis of pre-impounding wood biomass reveals that above-water decomposition in Amazonian reservoirs is a large, previously unrecognized source of carbon emissions to the atmosphere, representing 26-45% of the total reservoir flux integrated over 100 years. Accounting for both below- and above-water fluxes, we could estimate that each km2 of Amazonian forest converted to reservoir would emit over 140 Gg CO2-eq in 100 years. Hydropower plants in the Amazon should thus generate 0.25-0.4 MW h per km2 flooded area to produce lower greenhouse gas emissions than gas power plants. They also have the disadvantage to emit most of their greenhouse gases the earliest years of operation.

  11. Evaluation of lubricating oil preparation procedures for the determination of Al, Ba, Mo, Si and V by high-resolution continuum source FAAS.

    PubMed

    Amorim Filho, Volnei Resta; Gomes Neto, José Anchieta

    2009-01-01

    Microwave-assisted acid decomposition and oil-in-water emulsification were evaluated as sample pretreatment procedures to determine Al, Ba, Mo, Si and V in lubricating oils by high-resolution continuum source flame atomic absorption spectrometry (HR-CS FAAS). Average recoveries of Al, Ba and V in oil digests (107, 103 and 101%) were close to those obtained for emulsions prepared in kerosene medium (94, 113 and 95%). Average recoveries for Mo were close to 105 and 46% for emulsions and digests, respectively. Improved average recoveries (101%) were obtained for Mo in digests using the analyte addition technique. Silicon was successfully quantified only in digested samples. Limits of quantification for Al, Ba, Mo and V were 1.4, 31.5, 1.5 and 11.4-fold lower than those obtained by line-source FAAS. Enhanced sensitivity, multi-elemental capability, and high sample throughput are among the main advantages of HR-CS FAAS in comparison with the line-source FAAS technique.

  12. Sump additives as a source of bioaerosols in a school building.

    PubMed

    Thorne, P S

    1993-04-01

    An investigation was launched following complaints of poor air quality and building-related illness in a public elementary school. Occlusion of air intakes put the building under negative pressure and caused vents from a below-ground sump to become air intakes. Outside air drawn through the sump pit traveled into the adjacent main air handling unit and was disseminated throughout the building. Sump additives introduced in an attempt to counteract foul odors contained spores of Bacillus species, which appeared as bioaerosols throughout the school. Viable microbial sampling identified B subtilis, B cereus, and B licheniformis in the sump room and classrooms at levels as high as 760 colony forming units/m3 (CFU/m3). Concentrations of CO2 in classrooms were 1250 ppm, indicating inadequate makeup air. Remediation was accomplished by opening the air intakes, isolating the sump room from the air handling system, venting the sump to the outside, and flushing the sump with fresh water on a regular basis.

  13. High Temperature Thermoplastic Additive Manufacturing Using Low-Cost, Open-Source Hardware

    NASA Technical Reports Server (NTRS)

    Gardner, John M.; Stelter, Christopher J.; Yashin, Edward A.; Siochi, Emilie J.

    2016-01-01

    Additive manufacturing (or 3D printing) via Fused Filament Fabrication (FFF), also known as Fused Deposition Modeling (FDM), is a process where material is placed in specific locations layer-by-layer to create a complete part. Printers designed for FFF build parts by extruding a thermoplastic filament from a nozzle in a predetermined path. Originally developed for commercial printers, 3D printing via FFF has become accessible to a much larger community of users since the introduction of Reprap printers. These low-cost, desktop machines are typically used to print prototype parts or novelty items. As the adoption of desktop sized 3D printers broadens, there is increased demand for these machines to produce functional parts that can withstand harsher conditions such as high temperature and mechanical loads. Materials meeting these requirements tend to possess better mechanical properties and higher glass transition temperatures (Tg), thus requiring printers with high temperature printing capability. This report outlines the problems and solutions, and includes a detailed description of the machine design, printing parameters, and processes specific to high temperature thermoplastic 3D printing.

  14. Source Distribution Method for Unsteady One-Dimensional Flows With Small Mass, Momentum, and Heat Addition and Small Area Variation

    NASA Technical Reports Server (NTRS)

    Mirels, Harold

    1959-01-01

    A source distribution method is presented for obtaining flow perturbations due to small unsteady area variations, mass, momentum, and heat additions in a basic uniform (or piecewise uniform) one-dimensional flow. First, the perturbations due to an elemental area variation, mass, momentum, and heat addition are found. The general solution is then represented by a spatial and temporal distribution of these elemental (source) solutions. Emphasis is placed on discussing the physical nature of the flow phenomena. The method is illustrated by several examples. These include the determination of perturbations in basic flows consisting of (1) a shock propagating through a nonuniform tube, (2) a constant-velocity piston driving a shock, (3) ideal shock-tube flows, and (4) deflagrations initiated at a closed end. The method is particularly applicable for finding the perturbations due to relatively thin wall boundary layers.

  15. The influence of Si addition in 55AlZn bath on the coating structures obtained in the batch hot-dip metallization

    NASA Astrophysics Data System (ADS)

    Mendala, J.

    2011-05-01

    One of the methods of increasing the corrosion resistance of zinc coatings is the application of zinc and aluminium alloy baths in the metallization process. The coatings obtained are characterized by much better corrosion resistance thanks to the combination of aluminium properties, i.e. the barrier protection provided by naturally created aluminium oxides, with the capacity to protect the steel substrate, which is characteristic of zinc coatings. Zinc coatings with 55 wt. % Al and an addition of Si have gained industrial importance. The introduction of a third alloying component into the metallization bath is a technological addition, the aim of which is to reduce and possibly inhibit the aluminium diffusion towards the substrate. The article presents the results of the examination of coatings obtained in a 55AlZn bath at varied parameters of the technological process, as well as the specification of silicon addition influence on the structure and chemical composition of the coatings, and on the kinetics of growth. The coatings were obtained in three temperatures: 620, 640 and 660°C, and the process was conducted in a 55 wt. % Al bath with Si content of 0, 0.8 and 1.6 wt. % respectively, the remaining content was Zn. For the purposes of evaluating the microstructure and thickness of the coatings obtained, examinations on a light microscope were conducted. In order to determine the chemical composition of the coatings obtained, an EDS analysis was conducted. Quantitative examination of the chemical composition was carried out on the selected cross-sections of samples with coatings considered to be representative ones, using a SEM with a microanalysis system. Moreover, the linear distribution of elements on the cross-sections of the chosen coatings was determined. It is possible to state that the addition of silicon to 55AlZn baths allows reducing the uncontrolled growth of a layer. The layers obtained are more uniform, continuous and they show good adhesion to

  16. Mo/Si multilayer-coated amplitude-division beam splitters for XUV radiation sources

    PubMed Central

    Sobierajski, Ryszard; Loch, Rolf Antonie; van de Kruijs, Robbert W. E.; Louis, Eric; von Blanckenhagen, Gisela; Gullikson, Eric M.; Siewert, Frank; Wawro, Andrzej; Bijkerk, Fred

    2013-01-01

    Amplitude-division beam splitters for XUV radiation sources have been developed and extensively characterized. Mo/Si multilayer coatings were deposited on 50 nm-thick SiN membranes. By changing the multilayer structure (periodicity, number of bilayers, etc.) the intensity of the reflected and transmitted beams were optimized for selected incident radiation parameters (wavelength, incident angle). The developed optical elements were characterized by means of XUV reflectometry and transmission measurements, atomic force microscopy and optical interferometry. Special attention was paid to the spatial homogeneity of the optical response and reflected beam wavefront distortions. Here the results of the characterization are presented and improvements required for advanced applications at XUV free-electron lasers are identified. A flatness as low as 4 nm r.m.s. on 3 × 3 mm beam splitters and 22 nm r.m.s. on 10 × 10 mm beam splitters has been obtained. The high-spatial-frequency surface roughness was about 0.7–1 nm r.m.s. The middle-spatial-frequency roughness was in the range 0.2–0.8 nm r.m.s. The reflection and transmission of the beam splitters were found to be very homogeneous, with a deviation of less than 2% across the full optical element. PMID:23412481

  17. Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source

    NASA Astrophysics Data System (ADS)

    Fujita, Miki; Kawamoto, Noriaki; Tatsumi, Tomohiko; Yamagishi, Katsumi; Horikoshi, Yoshiji

    2003-01-01

    Epitaxial ZnO films have been grown on Si (111) substrates by molecular beam epitaxy using ozone as an oxygen source. An initial deposition of a Zn layer followed by its oxidation produces a superior template for the subsequent ZnO growth. The reflection high-energy electron diffraction measurement suggests that the initial Zn layer and ZnO film are rotated by 30° with respect to the Si substrate orientation. The X-ray diffraction measurement reveals that the as-grown ZnO films are strongly c-oriented and include no rotational domains. Although there exists a small trace of ZnO (10\\bar{1}1) domains, it easily disappears upon annealing at 1100°C for 1 min after growth. Low-temperature photoluminescence measurements indicate that the emission property is improved significantly after annealing. The bound-exciton emission at 3.354 eV is dominant and its full-width at half maximum is as small as 11 meV.

  18. Addition of Si-H and B-H bonds and redox reactivity involving low-coordinate nitrido-vanadium complexes.

    PubMed

    Thompson, Rick; Tran, Ba L; Ghosh, Soumya; Chen, Chun-Hsing; Pink, Maren; Gao, Xinfeng; Carroll, Patrick J; Baik, Mu-Hyun; Mindiola, Daniel J

    2015-03-16

    In this study we enumerate the reactivity for two molecular vanadium nitrido complexes of [(nacnac)V≡N(X)] formulation [nacnac = (Ar)NC(Me)CHC(Me)(Ar)(-), Ar = 2,6-(CHMe2)2C6H3); X(-) = OAr (1) and N(4-Me-C6H4)2 (Ntolyl2) (2)]. Density functional theory calculations and reactivity studies indicate the nitride motif to have nucleophilic character, but where the nitrogen atom can serve as a conduit for electron transfer, thus allowing the reduction of the vanadium(V) metal ion with concurrent oxidation of the incoming substrate. Silane, H2SiPh2, readily converts the nitride ligand in 1 into a primary silyl-amide functionality with concomitant two-electron reduction at the vanadium center to form the complex [(nacnac)V{N(H)SiHPh2}(OAr)] (3). Likewise, addition of the B-H bond in pinacolborane to the nitride moiety in 2 results in formation of the boryl-amide complex [(nacnac)V{N(H)B(pinacol)}(Ntolyl2)] (4). In addition to spectroscopic data, complexes 3 and 4 were also elucidated structurally by single-crystal X-ray diffraction analysis. One-electron reduction of 1 with 0.5% Na/Hg on a preparative scale allowed for the isolation and structural determination of an asymmetric bimolecular nitride radical anion complex having formula [Na]2[(nacnac)V(N)(OAr)]2 (5), in addition to room-temperature solution X-band electron paramagnetic resonance spectroscopic studies.

  19. High-rate RPECVD of a-Si:H films by means of a VHF resonant plasma source

    SciTech Connect

    Blum, T.; Suchaneck, G.; Kuske, J.; Stephan, U.; Kottwitz, A.; Beyer, W.

    1996-12-31

    Thin film polycrystalline silicon on large-area glass substrate is a promising material for low-cost high efficiency solar cells. High deposition rate (up to 5 nm/s) a-Si:H films suitable for recrystallization were deposited using a {lambda}/4 helical resonator source. Refractive index, Tauc-gap, photo- and dark conductivities were measured for film characterization. The metastable behavior was characterized by the light-induced degradation of the photoconductivity. Hydrogen content and bonding configuration were analyzed by IR absorption and mass separated thermal fusion transients, film microstructure was studied by intentionally incorporating carbon and oxygen. Most of the hydrogen is located on internal surfaces in the otherwise dense material. Differences between the deposition from the highly excited plasma and the conventional remote PECVD process are discussed.

  20. A comparative study of Si-containing electrolyte additives for lithium ion battery: Which one is better and why is it better

    NASA Astrophysics Data System (ADS)

    Wang, Kang; Xing, Lidan; Zhu, Yunmin; Zheng, Xiongwen; Cai, Dandan; Li, Weishan

    2017-02-01

    Influence of two Si-containing electrolyte additives, tris(trimethylsilyl)borate (TMSB) and tris(trimethylsilyl)phosphate (TMSP), on the cyclic stability of high voltage LiNi0.5Mn1.5O4 electrode has been systematically studied in this work. The capacity retention of LiNi0.5Mn1.5O4 cycling in STD (1M LiPF6/EC: EMC = 3:7), TMSB- and TMSP-containing electrolytes is 23%, 85% and 71% after 600 cycles at 1C rate, respectively, revealing that the ability of TMSB on improving the cyclic performance of LiNi0.5Mn1.5O4 is superior to that of TMSP. Experimental and theoretical characterizations show that the preferential reaction of both TMSB and TMSP generates thin and uniform film on LiNi0.5Mn1.5O4 surface, which effectively suppress the continuous oxidation reaction of electrolyte. While the film generated from TMSB, which contains B and Si-rich compounds, shows better ability on restraining the growth of interfacial resistance during cycling, resulting in better cyclic stability of LiNi0.5Mn1.5O4 than that of TMSP.

  1. Modeling the Effect of External Carbon Source Addition under Different Electron Acceptor Conditions in Biological Nutrient Removal Activated Sludge Systems.

    PubMed

    Hu, Xiang; Wisniewski, Kamil; Czerwionka, Krzysztof; Zhou, Qi; Xie, Li; Makinia, Jacek

    2016-02-16

    The aim of this study was to expand the International Water Association Activated Sludge Model No. 2d (ASM2d) to predict the aerobic/anoxic behavior of polyphosphate accumulating organisms (PAOs) and "ordinary" heterotrophs in the presence of different external carbon sources and electron acceptors. The following new aspects were considered: (1) a new type of the readily biodegradable substrate, not available for the anaerobic activity of PAOs, (2) nitrite as an electron acceptor, and (3) acclimation of "ordinary" heterotrophs to the new external substrate via enzyme synthesis. The expanded model incorporated 30 new or modified process rate equations. The model was evaluated against data from several, especially designed laboratory experiments which focused on the combined effects of different types of external carbon sources (acetate, ethanol and fusel oil) and electron acceptors (dissolved oxygen, nitrate and nitrite) on the behavior of PAOs and "ordinary" heterotrophs. With the proposed expansions, it was possible to improve some deficiencies of the ASM2d in predicting the behavior of biological nutrient removal (BNR) systems with the addition of external carbon sources, including the effect of acclimation to the new carbon source.

  2. Effect of CeO2, MgO and Y2O3 additions on the sinterability of a milled Si3N4 with 14.5 wt% SiO2

    NASA Technical Reports Server (NTRS)

    Arias, A.

    1981-01-01

    The sinterability of alpha Si3N4 with 0-5.07 equivalent per cent of CeO2, MgO, or Y2O3 has been studied in the temperature range 1650-1820 C by density measurements and X-ray diffraction analysis. Maximum densities were obtained in the range 1765-1820 C and were 99.6% of theoretical with 2.5% CeO2; 98.5% of theoretical with 1.24 to 1.87% MgO, and 99.2% of theoretical with 2.5% Y2O3. Densities 94% or more of theoretical value were obtained with as little as 0.62 equivalent per cent additive.

  3. Effect of powder characteristics on gas-pressure sintering of Si{sub 3}N{sub 4} with rare earth additives

    SciTech Connect

    Tiegs, T.N.; Nunn, S.D.; Walls, C.A.; Barker, D.; Davisson, C.; Jones, P.J.

    1993-09-01

    Several Si{sub 3}N{sub 4} powders, synthesized by various methods and having different surface areas, oxygen contents and impurity levels, were examined. During early stage densification, all powders showed similar shrinkage with the diimide ederived powder exhibiting delayed {alpha}/{beta} transformation compared to the other powders. The diimide and gas-phase derived powders achieved the highest final densities. Improved densification was observed by increasing the oxygen content and this also resulted in high toughness for some materials with rare earth apatite additives. However, the increased oxygen resulted in reduced high temperature strength. Fracture toughnesses (K{sub Ic}) up to 10 MPa{radical}m were obtained for some compositions.

  4. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Robson, M. T.; LaPierre, R. R.

    2016-02-01

    InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440 °C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.

  5. Effect of cerium addition on casting/chill interfacial heat flux and casting surface profile during solidification of Al-14%Si alloy

    NASA Astrophysics Data System (ADS)

    Vijeesh, V.; Prabhu, K. N.

    2016-03-01

    In the present investigation, Al-14 wt. % Si alloy was solidified against copper, brass and cast iron chills, to study the effect of Ce melt treatment on casting/chill interfacial heat flux transients and casting surface profile. The heat flux across the casting/chill interface was estimated using inverse modelling technique. On addition of 1.5% Ce, the peak heat flux increased by about 38%, 42% and 43% for copper, brass and cast iron chills respectively. The effect of Ce addition on casting surface texture was analyzed using a surface profilometer. The surface profile of the casting and the chill surfaces clearly indicated the formation of an air gap at the periphery of the casting. The arithmetic average value of the profile departure from the mean line (Ra) and arithmetical mean of the absolute departures of the waviness profile from the centre line (Wa) were found to decrease on Ce addition. The interfacial gap width formed for the unmodified and Ce treated casting surfaces at the periphery were found to be about 35µm and 13µm respectively. The enhancement in heat transfer on addition of Ce addition was attributed to the lowering of the surface tension of the liquid melt. The gap width at the interface was used to determine the variation of heat transfer coefficient (HTC) across the chill surface after the formation of stable solid shell. It was found that the HTC decreased along the radial direction for copper and brass chills and increased along radial direction for cast iron chills.

  6. On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET

    NASA Astrophysics Data System (ADS)

    Joodaki, M.

    2015-09-01

    This paper focuses on the extraction of drain/source resistance and effective channel length (Leff) of the silicon MOSFET in the linear drain current region. Leff is expressed as a function of drain/source resistance, drain current, threshold voltage, drain voltage, and body-effect coefficient. Using this definition, an additional component of drain/source resistance in the linear drain current region, inversion charge reduction resistance (RΔQ), is introduced which results from the influence of drain/source resistors, internal source/body voltage and drain voltage on the total inversion charge. Finally, a new method for extraction of the drain/source resistance is developed. In this method several parameters that have impact on device behavior are considered. The parameters include gate voltage dependency, short channel effects, and poly gate length dependency. The results presented here are not only very useful for accurate device modeling and characterization, but are also vital to better understanding of the device physics. Furthermore, they can describe shortcomings of the other methods which use devices of different gate lengths. The extracted linear model provides less than 1.07% and 3.3% average absolute error and maximum error, respectively, for all seven devices under test over the gate voltage range of 0.75-2 V.

  7. Precise Perforation and Scalable Production of Si Particles from Low-Grade Sources for High-Performance Lithium Ion Battery Anodes.

    PubMed

    Zong, Linqi; Jin, Yan; Liu, Chang; Zhu, Bin; Hu, Xiaozhen; Lu, Zhenda; Zhu, Jia

    2016-11-09

    Alloy anodes, particularly silicon, have been intensively pursued as one of the most promising anode materials for the next generation lithium-ion battery primarily because of high specific capacity (>4000 mAh/g) and elemental abundance. In the past decade, various nanostructures with porosity or void space designs have been demonstrated to be effective to accommodate large volume expansion (∼300%) and to provide stable solid electrolyte interphase (SEI) during electrochemical cycling. However, how to produce these building blocks with precise morphology control at large scale and low cost remains a challenge. In addition, most of nanostructured silicon suffers from poor Coulombic efficiency due to a large surface area and Li ion trapping at the surface coating. Here we demonstrate a unique nanoperforation process, combining modified ball milling, annealing, and acid treating, to produce porous Si with precise and continuous porosity control (from 17% to 70%), directly from low cost metallurgical silicon source (99% purity, ∼ $1/kg). The produced porous Si coated with graphene by simple ball milling can deliver a reversible specific capacity of 1250 mAh/g over 1000 cycles at the rate of 1C, with Coulombic efficiency of first cycle over 89.5%. The porous networks also provide efficient ion and electron pathways and therefore enable excellent rate performance of 880 mAh/g at the rate of 5C. Being able to produce particles with precise porosity control through scalable processes from low-grade materials, it is expected that this nanoperforation may play a role in the next generation lithium ion battery anodes, as well as many other potential applications such as optoelectronics and thermoelectrics.

  8. Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

    NASA Astrophysics Data System (ADS)

    Eneman, Geert; De Keersgieter, An; Witters, Liesbeth; Mitard, Jerome; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron

    2013-04-01

    The interaction between two stress techniques, strain-relaxed buffers (SRBs) and epitaxial source/drain stressors, is studied on short, Si1-xGex- and Ge-channel planar transistors. This work focuses on the longitudinal channel stress generated by these two techniques. Unlike for unstrained silicon-channel transistors, for strained channels on top of a strain-relaxed buffer a source/drain stressor without recess generates similar longitudinal channel stress than source/drain stressors with a deep recess. The least efficient stress transfer is obtained for source/drain stressors with a small recess that removes only the strained channel, not the substrate underneath. These trends are explained by a trade-off between elastic relaxation of the strained-channel during source/drain recess and the increased stress generation of thicker source/drain stressors. For Ge-channel pFETs, GeSn source/drains and Si1-xGex strain-relaxed buffers are efficient stressors for mobility enhancement. The former is more efficient for gate-last schemes than for gate-first, while the stress generated by the SRB is found to be independent of the gate-scheme.

  9. Influence of ternary addition of transition elements (Cr, Si and Mn) on the microstructure and magnetic properties of nano-structured CuCo alloy

    NASA Astrophysics Data System (ADS)

    Mondal, B. N.; Chabri, S.; Basumallick, A.; Chattopadhyay, P. P.

    2012-09-01

    The current state of studies presents the effect of ternary addition of transition elements such as Mn, Cr and Si (10 wt%) on the mechanically driven non-equilibrium solubility of 40 wt% Co containing Cu-Co alloy. X-ray powder diffraction analysis indicates that addition of Mn has been found to be the most effective in enhancing the solubility and formation of a complete solid solution between Co and Cu in a short duration (30 h) of ball milling. The microstructure of the ball milled CuCoMn alloy was found to be stable after the isothermal annealing up to a temperature of 450 °C for 1 h. The magnetic properties such as magnetic saturation, coercivity and remanence of ball milled CuCo alloy in the presence of Mn significantly altered after annealing in the temperature range 350-650 °C for 1 h. The best combination of magnetic properties of CuCoMn alloy has been found after annealing at 550 °C for 1 h.

  10. Effect of Nano-Si3N4 Additives and Plasma Treatment on the Dry Sliding Wear Behavior of Plasma Sprayed Al2O3-8YSZ Ceramic Coatings

    NASA Astrophysics Data System (ADS)

    Gou, Junfeng; Zhang, Jian; Zhang, Qiwen; Wang, You; Wang, Chaohui

    2017-02-01

    In this paper, the effect of nano-Si3N4 additives and plasma treatment on the wear behavior of Al2O3-8YSZ ceramic coatings was studied. Nano-Al2O3, nano-8YSZ (8 wt.% Y2O3-stabilized ZrO2) and nano-Si3N4 powders were used as raw materials to fabricate four types of sprayable feedstocks. Plasma treatment was used to improve the properties of the feedstocks. The surface morphologies of the ceramic coatings were observed. The mechanical properties of the ceramic coatings were measured. The dry sliding wear behavior of the Al2O3-8YSZ coatings with and without Si3N4 additives was studied. Nano-Si3N4 additives and plasma treatment can improve the morphologies of the coatings by prohibiting the initiation of micro-cracks and reducing the unmelted particles. The hardness and bonding strength of AZSP (Al2O3-18 wt.% 8YSZ-10 wt.% Si3N4-plasma treatment) coating increased by 79.2 and 44% compared to those of AZ (Al2O3-20 wt.% 8YSZ) coating. The porosity of AZSP coating decreased by 85.4% compared to that of AZ coating. The wear test results showed that the addition of nano-Si3N4 and plasma treatment could improve the wear resistance of Al2O3-8YSZ coatings.

  11. Xylem-Transported Glucose as an Additional Carbon Source for Leaf Isoprene Formation in Quercus Robur L.

    NASA Astrophysics Data System (ADS)

    Graus, M.; Kreuzwieser, J.; Schnitzler, J.; Wisthaler, A.; Hansel, A.; Rennenberg, H.

    2003-04-01

    Isoprene is emitted from mature, photosynthesizing leaves of many plant species, particularly of trees. Current interest in understanding the biochemical and physiological mechanisms controlling isoprene formation is caused by the important role isoprene plays in atmospheric chemistry. Isoprene reacts with hydroxyl radicals (OH) thereby generating oxidizing agents such as ozone and organic peroxides. Ozone causes significant deterioration in air quality and can pose threats to human health therefore its control is a major goal in Europe and the United States. In recent years, much progress has been made in elucidating the pathways of isoprene biosynthesis. Nevertheless the regulatory mechanisms controlling isoprene emission are not completely understood. Light and temperature appear to be the main factors controlling short-term variations in isoprene emission. Exposure of plants to C-13 labeled carbon dioxide showed instantaneous assimilated carbon is the primary carbon source for isoprene formation. However, variations in diurnal and seasonal isoprene fluxes, which cannot be explained by temperature, light, and leaf development led to the suggestion that alternative carbon sources may exist contributing to isoprene emissions. The aim of the present study was to test whether xylem-transported carbohydrates act as additional sources for isoprene biosynthesis. For this purpose, [U-C-13] alpha-D-glucose was fed to photosynthesizing leaves via the xylem of Quercus robur L. seedlings and the incorporation of glucose derived C-13 into emitted isoprene was monitored in real time using Proton-Transfer-Reaction Mass Spectrometry (PTR-MS). A rapid incorporation of C-13 from xylem-fed glucose into single (mass 70) and double (mass 71) C-13 labeled isoprene molecules was observed after a lag phase of approximately 5 to 10 minutes. This incorporation was temperature dependent and was highest (up to 13% C-13 of total carbon emitted as isoprene) at the temperature optimum of

  12. Xylem-transported Glucose as an Additional Carbon Source for Leaf Isoprene Formation in Quercus Robur L.

    NASA Astrophysics Data System (ADS)

    Graus, M.; Wisthaler, A.; Hansel, A.; Kreuzwieser, J.; Rennenberg, H.; Schnitzler, J.

    2002-12-01

    Isoprene is emitted from mature, photosynthesizing leaves of many plant species, particularly of trees. Current interest in understanding the biochemical and physiological mechanisms controlling isoprene formation is caused by the important role isoprene plays in atmospheric chemistry. Isoprene reacts with hydroxyl radicals (OH) thereby generating oxidizing agents such as ozone and organic peroxides. Ozone causes significant deterioration in air quality and can pose threats to human health therefore its control is a major goal in Europe and the United States. In recent years, much progress has been made in elucidating the pathways of isoprene biosynthesis. Nevertheless the regulatory mechanisms controlling isoprene emission are not completely understood. Light and temperature appear to be the main factors controlling short-term variations in isoprene emission. Exposure of plants to 13CO2 showed instantaneous assimilated carbon is the primary carbon source for isoprene formation. However, variations in diurnal and seasonal isoprene fluxes, which cannot be explained by temperature, light, and leaf development led to the suggestion that alternative carbon sources may exist contributing to isoprene emissions. The aim of the present study was to test whether xylem-transported carbohydrates act as additional sources for isoprene biosynthesis. For this purpose, [U-13C]α-D-glucose was fed to photosynthesizing leaves via the xylem of {Quercus} {robur} L. seedlings and the incorporation of glucose derived 13C into emitted isoprene was monitored in real time using Proton-Transfer-Reaction Mass Spectrometry (PTR-MS). A rapid incorporation of 13C from xylem-fed glucose into single (mass 70) and double (mass 71) 13C-labeled isoprene molecules was observed after a lag phase of approximately 5 to 10 minutes. This incorporation was temperature dependent and was highest (up to 13 % 13C of total carbon emitted as isoprene) at the temperature optimum of isoprene emission (40 - 42

  13. Additively manufactured MEMS multiplexed coaxial electrospray sources for high-throughput, uniform generation of core-shell microparticles.

    PubMed

    Olvera-Trejo, D; Velásquez-García, L F

    2016-10-18

    This study reports the first MEMS multiplexed coaxial electrospray sources in the literature. Coaxial electrospraying is a microencapsulation technology based on electrohydrodynamic jetting of two immiscible liquids, which allows precise control with low size variation of the geometry of the core-shell particles it generates, which is of great importance in numerous biomedical and engineering applications, e.g., drug delivery and self-healing composites. By implementing monolithic planar arrays of miniaturized coaxial electrospray emitters that work uniformly in parallel, the throughput of the compound microdroplet source is greatly increased, making the microencapsulation technology compatible with low-cost commercial applications. Miniaturized core-shell particle generators with up to 25 coaxial electrospray emitters (25 emitters cm(-2)) were fabricated via stereolithography, which is an additive manufacturing process that can create complex microfluidic devices at a small fraction of the cost per device and fabrication time associated with silicon-based counterparts. The characterization of devices with the same emitter structure but different array sizes demonstrates uniform array operation. Moreover, the data demonstrate that the per-emitter current is approximately proportional to the square root of the flow rate of the driving liquid, and it is independent of the flow rate of the driven liquid, as predicted by the theory. The core/shell diameters and the size distribution of the generated compound microparticles can be modulated by controlling the flow rates fed to the emitters.

  14. Ge/Si, Ca/Sr and 87Sr/86Sr tracers of biogeochemical sources and cycling of Si and Ca at the Shale Hills CZO

    NASA Astrophysics Data System (ADS)

    Derry, L. A.; Meek, K.; Sparks, J. P.

    2014-12-01

    Plant uptake and cycling of nutrients is commonly the largest flux of nutrients in terrestrial ecosystems. Hydrologic and other losses are offset by inputs from atmospheric deposition and weathering. We measured elemental and isotopic compositions from soil solution, soil exchange complex, leaves and sapwater from two canopy species, soil and rock samples, and stream and ground waters at the Shale Hills CZO. Xylem fluid and leaf samples have similar Ge/Si < 1 μmo/mol, consistent with fractionation at the root-soil water interface. Ge/Si in soil waters is higher Ge/Si near the surface and increases over the growing season, indicating preferential uptake of Si. Ca/Sr in leaves of Quercus are significantly higher (450±150) than for Acer (200±100), and Ca/Sr is generally higher in leaves than in xylem, consistent with Ca uptake during transpiration. 87Sr/86Sr in both are similar for a given site, implying that the trees access similar pools of Sr and Ca, although there are site-to-site differences. Data on litterfall rates and transpiration rates yield similar estimates of plant cycling of Ca and Si. 87Sr/86Sr in soil solutions from ridgtop and swale sites are well explained by mixing Sr derived from shale and atmospheric deposition. Valley bottom soil solutions and stream and groundwater samples include Sr and Ca derived from dissolution of diagenetic carbonates, found in drill cuttings. A preliminary estimate of the Sr and Ca stream fluxes and isotopic mass balances imply propagation of a carbonate weathering front of ca. 200 m/Ma, faster than previously reported regolith weathering advance rates based on on cosmogenic nuclides and U series (Jin et al., 2010; Ma et al., 2010). These rates are not strictly comparable and differences are at least in part consistent with the greater depth of the carbonate weathering front (Brantley et al, 2013). The data for Ca, Sr, Si and Ge in soil, soil solutions and stream waters reflects the interaction of slower weathering

  15. Reduction of Methane Emission during Slurry Storage by the Addition of Effective Microorganisms and Excessive Carbon Source from Brewing Sugar.

    PubMed

    Bastami, Mohd Saufi B; Jones, Davey L; Chadwick, David R

    2016-11-01

    Storing livestock manure is the primary stage of manure management where microbial processes and chemical reactions result in the release of methane (CH), nitrous oxide (NO), ammonia (NH), and carbon dioxide (CO). This study examined the reduction of CH emissions from slurry storage under two temperatures (cool [10°C] and warm [30°C]) when a glucose-rich substrate (brewing sugar) and activated effective microorganisms were applied at 10% (w/w) and 5% (v/w), respectively. Brewing sugar addition influenced microbial anaerobic respiration, resulting in a reduction of slurry pH to <5.0, through "self-acidification" caused by lactic acid production. Subsequently, CH emissions were significantly reduced by 87 and 99% in the cool and warm environments, respectively. The effective microorganism treatment did not change the chemical characteristics of the slurry but reduced CH emissions by 17 and 27% ( < 0.05) in the cool and warm environments, respectively. These results suggest that self-acidification after addition of a carbon source may be a promising alternative to slurry acidification using concentrated acids.

  16. Addition of a worm leachate as source of humic substances in the drinking water of broiler chickens.

    PubMed

    Gomez-Rosales, S; de L Angeles, M

    2015-02-01

    The objective of this research was to evaluate the growth performance, the apparent ileal digestibility of nitrogen and energy, the retention of nutrients and the apparent metabolizable energy corrected to zero nitrogen retention (AMEn) in broiler chickens supplemented with increasing doses of a worm leachate (WL) as a source of humic substances (HS) in the drinking water. In Exp. 1, 140 male broilers were penned individually and assigned to four WL levels (0%, 10%, 20%, and 30%) mixed in the drinking water from 21 to 49 days of age. Water was offered in plastic bottles tied to the cage. In Exp. 2, 600 male broilers from 21 to 49 days of age housed in floor pens were assigned to three levels of WL (0%, 10%, and 20%) mixed in the drinking water. The WL was mixed with tap water in plastic containers connected by plastic tubing to bell drinkers. The results of both experiments were subjected to analysis of variance and polynomial contrasts. In Exp. 1, the daily water consumption was similar among treatments but the consumption of humic, fulvic, and total humic acids increased linearly (p<0.01) as the WL increased in the drinking water. The feed conversion (p<0.01) and the ileal digestibility of energy, the excretion of dry matter and energy, the retention of dry matter, ash and nitrogen and the AMEn showed quadratic responses (p<0.05) relative to the WL levels in drinking water. In Exp. 2, the increasing level of WL in the drinking water had quadratic effects on the final body weight, daily weight gain and feed conversion ratio (p<0.05). The addition of WL as a source of HS in the drinking water had beneficial effects on the growth performance, ileal digestibility of energy, the retention of nutrients as well on the AMEn in broiler chickens; the best results were observed when the WL was mixed at levels of 20% to 30% in the drinking water.

  17. Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

    DTIC Science & Technology

    2012-01-26

    Bouchacourt [19]. h. Spark - plasma sinterered B4C (not isotopically enriched), 98% relative density [21]. i. EP (Eagle-Pitcher) hot-pressed B4C [22]. j...silicate surface coating observed to form. Carney [4] investigated the oxidation behavior of HfB2 - 20 vol% SiC (fabricated through 57 spark plasma ...C. The thermal diffusivities oftheoretically dense ZrB2-SiC (10. 7, 21.9, or 48.7 vol% SiC) sintered /HIPed "With B4C sintering aid was measured using

  18. Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Hong, Peizhen; Liu, Jinbiao; Yin, Huaxiang; Yin, Haizhou; Ma, Xiaolong; Cui, Hushan; Lu, Yihong; Meng, Lingkuan; Xiang, Jinjuan; Zhong, Huicai; Zhu, Huilong; Xu, Qiuxia; Li, Junfeng; Yan, Jian; Zhao, Chao; Radamson, Henry H.

    2016-09-01

    In this paper, the technology of recessed embedded SiGe (e-SiGe) source/drain (S/D) module is optimized for the performance enhancement in 22 nm all-last high-k/metal-gate (HK/MG) pMOSFETs. Different Si recess-etch techniques were applied in S/D regions to increase the strain in the channel and subsequently, improve the performance of transistors. A new recess-etch method consists of a two-step etch method is proposed. This process is an initial anisotropic etch for the formation of shallow trench followed by a final isotropic etch. By introducing the definition of the upper edge distance (D) between the recessed S/D region and the channel region, the process advantage of the new approach is clearly presented. It decreases the value of D than those by conventional one-step isotropic or anisotropic etch of Si. Therefore, the series resistance is reduced and the channel strain is increased, which confirmed by the simulation results. The physical reason of D reducing is analyzed in brief. Applying this recess design, the implant conditions for S/D extension (SDE) are also optimized by using a two-step implantation of BF2 in SiGe layers. The overlap space between doping junction and channel region has great effect on the device's performance. The designed implantation profile decreases the overlap space while keeps a shallow junction depth for a controllable short channel effect. The channel resistance as well as the transfer ID-VG curves varying with different process conditions are demonstrated. It shows the drive current of the device with the optimized SDE implant condition and Si recess-etch process is obviously improved. The change trend of on-off current distributions extracted from a series of devices confirmed the conclusions. This study provides a useful guideline for developing high performance strained PMOS SiGe technology.

  19. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

    NASA Astrophysics Data System (ADS)

    Wang, Guilei; Luo, Jun; Qin, Changliang; Liang, Renrong; Xu, Yefeng; Liu, Jinbiao; Li, Junfeng; Yin, Huaxiang; Yan, Jiang; Zhu, Huilong; Xu, Jun; Zhao, Chao; Radamson, Henry H.; Ye, Tianchun

    2017-02-01

    In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1- x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 1020 cm-3 was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.

  20. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.

    PubMed

    Wang, Guilei; Luo, Jun; Qin, Changliang; Liang, Renrong; Xu, Yefeng; Liu, Jinbiao; Li, Junfeng; Yin, Huaxiang; Yan, Jiang; Zhu, Huilong; Xu, Jun; Zhao, Chao; Radamson, Henry H; Ye, Tianchun

    2017-12-01

    In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 10(20) cm(-3) was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.

  1. α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

    NASA Astrophysics Data System (ADS)

    Mukherjee, Moumita; Mazumder, Nilratan; Roy, Sitesh Kumar

    2010-05-01

    The effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p++ p n n++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments. This study reveals that at 300 K < T < 600 K, a 4H-SiC IMPATT diode may yield 3.5 W of output power (efficiency (η) ~ 8.6%) at 1.3 THz, while its 6H-SiC counterpart can deliver 3 W of output power (η = 6.3%) at 1.2 THz. It is interesting to observe that at elevated temperature, the performance of a 6H-SiC IMPATT diode degrades more in comparison with its 4H-SiC counterpart. These comparative analyses reveal the superiority of 4H-SiC diodes over their 6H-SiC counterparts, and thus establish the potential of the former as a high-power THz IMPATT oscillator even in harsh environments. Mobile space charge effects and the effect of positive series resistance on the high-temperature performance of the THz devices are also simulated, and it is found that series resistance reduces the output power level of the diodes by at least 15.0%. Moreover, the effects of increased junction temperature on the photo-sensitivity of top mounted (TM) and flip chip (FC) α-SiC IMPATTs are also investigated using a modified simulation technique. The device operating frequencies, under TM illumination configuration, shifts upward by at least 40.0 GHz, whereas the operating frequency shifts upward by at least 100.0 GHz under FC illumination configuration. The simulation results and the proposed experimental methodology presented here may be used for realizing optically controlled α-SiC transit-time devices for application in THz communication.

  2. In situ sol-gel composition of multicomponent hybrid precursors to luminescent novel unexpected microrod of Y 2SiO 5:Eu 3+ employing different silicate sources

    NASA Astrophysics Data System (ADS)

    Huang, Honghua; Yan, Bing

    2004-12-01

    Y 2SiO 5 doped with Eu 3+ were in situ synthesized by a hybrid precursor assembly sol-gel technology employing four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM result shows that there exist some novel unexpected morphological microrod structures owing to using the crosslinking reagents other than TEOS as silicate source. The photoluminescent properties of Y 2SiO 5:Eu 3+ have been studied as a function of Eu 3+ doping concentration. A cross-relaxation process between identical Eu 3+ ions results in the quenching of the 5D 1 emission for high concentration sample.

  3. Field-scale investigation of enhanced petroleum hydrocarbon biodegradation in the vadose zone combining soil venting as an oxygen source with moisture and nutrient addition. Appendices. Doctoral thesis

    SciTech Connect

    Miller, R.N.

    1990-01-01

    This document contains appendices regarding a reprint on a field scale investigation of enhanced petroleum hydrocarbon biodegradation in the vadose zone combining soil venting as a oxygen source with moisture and nutrient addition.

  4. Effects of waste eggshells and SiC addition on specific strength and thermal expansion of hybrid green metal matrix composite.

    PubMed

    Sharma, Satpal; Dwivedi, Shashi Prakash

    2017-03-18

    Chicken eggshell waste is an industrial byproduct, and its disposal constitutes a serious environmental hazard. Chicken eggshell can be used in commercial products to produce new materials with low cost and density. Low density material which can sustain at higher temperature is a remarkable area of research. Keeping these facts in the mind, the present investigation aims to study the physical behaviour, specific strength and thermal expansion of AA2014/SiC/carbonized eggshell hybrid green metal matrix composites. Microstructure of hybrid green metal matrix shows that the reinforcement particles (SiC particulates and carbonized eggshells particles) are uniformly distributed in the matrix AA2014 alloy. Specific strength for the composites containing 2.5wt.% SiC and up to 7.5wt.% carbonized eggshell was observed to be higher than that of the other selected composites. While for the same composition (AA2014/2.5% SiC/7.5% carbonized eggshell composites), porosity was observed lower than other selected composites. The results revealed that sample of AA2014/2.5% SiC/7.5% carbonized eggshell showed minimum cross sectional area reduction after the thermal expansion at 450°C among all the selected samples. Overall costs of hybrid metal matrix composites were also calculated.

  5. Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

    NASA Astrophysics Data System (ADS)

    Xu, J.; Yang, Y. Z.; Li, W.; Chen, X. C.; Xie, Z. W.

    2016-11-01

    The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe83.4Si2B14-xPxCu0.5C0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe83.4Si2B10P4Cu0.5C0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe83.4Si2B11P3Cu0.5C0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe83.4Si2B10P4Cu0.5C0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications.

  6. Study on the lifetime of Mo/Si multilayer optics with pulsed EUV-source at the ETS

    NASA Astrophysics Data System (ADS)

    Schürmann, Mark; Yulin, Sergiy; Nesterenko, Viatcheslav; Feigl, Torsten; Kaiser, Norbert; Tkachenko, Boris; Schürmann, Max C.

    2011-06-01

    As EUV lithography is on its way into production stage, studies of optics contamination and cleaning under realistic conditions become more and more important. Due to this fact an Exposure Test Stand (ETS) has been constructed at XTREME technologies GmbH in collaboration with Fraunhofer IOF and with financial support of Intel Corporation. This test stand is equipped with a pulsed DPP source and allows for the simultaneous exposure of several samples. In the standard set-up four samples with an exposed area larger than 35 mm2 per sample can be exposed at a homogeneous intensity of 0.25 mW/mm2. A recent update of the ETS allows for simultaneous exposures of two samples with intensities up to 1.0 mW/mm2. The first application of this alternative set-up was a comparative study of carbon contamination rates induced by EUV radiation from the pulsed source with contamination rates induced by quasicontinuous synchrotron radiation. A modified gas-inlet system allows for the introduction of a second gas to the exposure chamber. This possibility was applied to investigate the efficiency of EUV-induced cleaning with different gas mixtures. In particular the enhancement of EUV-induced cleaning by addition of a second gas to the cleaning gas was studied.

  7. Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

    NASA Astrophysics Data System (ADS)

    Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; GuillonPresent Address: Forschungszentrum Jülich, Institut Für Energie-Und Klimaforschung 1: Werkstoffsynthese Und Herstellungsverfahren, Wilhelm-Johnen-Straße, D.-52425 Jülich., Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

    2014-10-01

    A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

  8. Addition of SiC Particles to Ag Die-Attach Paste to Improve High-Temperature Stability; Grain Growth Kinetics of Sintered Porous Ag

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Nagao, Shijo; Suganuma, Katsuaki

    2015-10-01

    To improve the high-temperature reliability of sintered Ag joints, three types of silicon carbide particle (SiCp) of different size and morphology were added to Ag micron-flake paste. Quality sintered joints between Cu dummy chips and Cu substrate were obtained at a relatively low temperature (250°C), in air, under low load (0.4 MPa), and 35 MPa die-shear strength was achieved. High-temperature stability was investigated by means of aging tests at 150, 200, and 250°C for 500 h, and by thermal cycling between -50°C and 250°C for up to 170 cycles. The best distribution and compatibility with porous sintered Ag structures was observed for sub-micron SiC particles with an average diameter of 600 nm. After high-temperature storage for 500 h at 250°C, mean Ag grain size of the SiC-containing joints was unchanged whereas that for pure sintered Ag increased from 1.1 to 2.5 μm. Ag joints containing the optimum amount (2 wt.%) of SiCp retained their original strength (20 MPa) after storage at 250°C for 500 h. The shear strength of Ag joints without added SiCp decreased from 27 to 7 MPa after 500 h because of grain growth, which obeyed the classical parabolic law. Grain growth in pure Ag joints is discussed in terms of a temperature-dependent exponent n and activation energy Q. Our SiCp-containing joints resisted the grain growth that induces interfacial cracks during thermal cycling.

  9. 77 FR 12226 - Sadex Corp.; Filing of Food Additive Petition (Animal Use); Electron Beam and X-Ray Sources for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-29

    ... Petition (Animal Use); Electron Beam and X-Ray Sources for Irradiation of Poultry Feed and Poultry Feed... poultry feed and poultry feed ingredients. DATES: Submit either electronic or written comments on the... use of electron beam and x- ray sources for irradiation of poultry feed and poultry feed...

  10. Observations of SiO toward OMC-1 - A new outflow source 1.5 arcmin south of Orion-KL?

    NASA Technical Reports Server (NTRS)

    Ziurys, L. M.; Friberg, P.

    1987-01-01

    Observations of the J = 2-1 transition of thermal SiO have been carried out toward OMC-1. Approximately 1.5 arcmin south of the KL nebula and IRc2, a new moderately strong source of SiO emission with T(a)-asterisk of about 1 K has been detected. The emission appears to be confined to a region 30 arcsec or less in size and shows evidence of high-velocity wings extending + or - 12-15 km/s from line center, which may indicate the presence of an embedded star in its early stages. The SiO J - 2-1 line was sought at other positions in OMC-1 but was not detected except at (3N, 1E), where a weak narrow line was observed. Derived column densities and abundances at the 1.5-arcmin S, (3N, 1E), and KL positions suggest that SiO formation is favored in regions where outflows and high temperatures are present.

  11. Spark Plasma Sintering of α/β Si3N4 Ceramics with MgO-Al2O3 and MgO-Y2O3 as Sintering Additives

    NASA Astrophysics Data System (ADS)

    Yu, F. L.; Bai, Y.; Han, P. D.; Shi, Q. L.; Ni, S.; Wu, J. H.

    2016-12-01

    In the present work, the α/β Si3N4 ceramics were fabricated by spark plasma sintering (SPS) at 1400-1500 °C for 6 min with 3wt.%MgO + 5wt.%Al2O3 and 3wt.%MgO + 5wt.%Y2O3 as sintering additives. The results showed that the phase composition, microstructure and mechanical properties of α/β Si3N4 ceramics were highly dependent on the type of sintering additive. The incomplete phase transformation from α to β occurred in the presence of an oxynitride (Mg-Al(Y)-Si-O-N) liquid phase. Compared with MgO-Al2O3, MgO-Y2O3 can significantly improve the β conversion rate of as-sintered α/β Si3N4 ceramics. And the as-sintered ceramics using MgO + Al2O3 as sintering additives had higher mechanical properties.

  12. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ˜70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ˜10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium

  13. Coating of 6028 Aluminum Alloy Using Aluminum Piston Alloy and Al-Si Alloy-Based Nanocomposites Produced by the Addition of Al-Ti5-B1 to the Matrix Melt

    NASA Astrophysics Data System (ADS)

    El-Labban, Hashem F.; Abdelaziz, M.; Mahmoud, Essam R. I.

    2014-10-01

    The Al-12 pctSi alloy and aluminum-based composites reinforced with TiB2 and Al3Ti intermetallics exhibit good wear resistance, strength-to-weight ratio, and strength-to-cost ratio when compared to equivalent other commercial Al alloys, which make them good candidates as coating materials. In this study, structural AA 6028 alloy is used as the base material. Four different coating materials were used. The first one is Al-Si alloy that has Si content near eutectic composition. The second, third, and fourth ones are Al-6 pctSi-based reinforced with TiB2 and Al3Ti nano-particles produced by addition of Al-Ti5-B1 master alloy with different weight percentages (1, 2, and 3 pct). The coating treatment was carried out with the aid of GTAW process. The microstructures of the base and coated materials were investigated using optical microscope and scanning electron microscope equipped with EDX analyzer. Microhardness of the base material and the coated layer were evaluated using a microhardness tester. GTAW process results in almost sound coated layer on 6028 aluminum alloy with the used four coating materials. The coating materials of Al-12 pct Si alloy resulted in very fine dendritic Al-Si eutectic structure. The interface between the coated layer and the base metal was very clean. The coated layer was almost free from porosities or other defects. The coating materials of Al-6 pct Si-based mixed with Al-Ti5-B1 master alloy with different percentages (1, 2, and 3 pct), results in coated layer consisted of matrix of fine dendrite eutectic morphology structure inside α-Al grains. Many fine in situ TiAl3 and TiB2 intermetallics were precipitated almost at the grain boundary of α-Al grains. The amounts of these precipitates are increased by increasing the addition of Al-Ti5-B1 master alloy. The surface hardness of the 6028 aluminum alloy base metal was improved with the entire four used surface coating materials. The improvement reached to about 85 pct by the first type of

  14. Effect of SiO2 addition on photocatalytic activity, water contact angle and mechanical stability of visible light activated TiO2 thin films applied on stainless steel by a sol gel method

    NASA Astrophysics Data System (ADS)

    Momeni, Mansour; Saghafian, Hasan; Golestani-Fard, Farhad; Barati, Nastaran; Khanahmadi, Amirhossein

    2017-01-01

    Nanostructured N doped TiO2/20%SiO2 thin films were developed on steel surface via sol gel method using a painting airbrush. Thin films then were calcined at various temperatures in a range of 400-600 °C. The effect of SiO2 addition on phase composition and microstructural evolution of N doped TiO2 films were studied using XRD and FESEM. Optical properties, visible light photocatalytic activity, hydrophilic behavior, and mechanical behavior of the films were also investigated by DRS, methylene blue degradation, water contact angle measurements, and nanoscratch testing. Results indicated that the band gap energy of N doped TiO2/SiO2 was increased from 2.93 to 3.09 eV. Crack formation during calcination was also significantly promoted in the composite films. All composite films demonstrated weaker visible light photocatalytic activities and lower mechanical stability in comparison with N doped TiO2 films. Moreover, the N doped TiO2/SiO2 film calcined at 600 °C showed undesirable hydrophilic behavior with a water contact angle of 57° after 31 h of visible light irradiation. Outcomes of the present study reveal some different results to previous reports on TiO2/SiO2 films. In general, we believe the differences in substrate material as well as application in visible light are the main reasons for the above mentioned contradiction.

  15. Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kuang, Y. J.; Sukrittanon, S.; Li, H.; Tu, C. W.

    2012-01-01

    We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from ˜1 × 107 to ˜5 × 108 cm-2 across the substrate. Typical diameters are ˜110 nm for GaP NWs and ˜220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is ˜0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

  16. In situ sol-gel composition of multicomponent hybrid precursor to hexagon-like Zn 2SiO 4:Tb 3+ microcrystalline phosphors with different silicate sources

    NASA Astrophysics Data System (ADS)

    Huang, Honghua; Yan, Bing

    2006-02-01

    Zn 2SiO 4 doped with Tb 3+ were in situ synthesized by a modified sol-gel technology with the assembly hybrid precursor employed four different silicate sources, i.e. 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM result shows that there exist some novel unexpected micromorphological structures of hexagon-like with the dimension of 0.5-1.0 μm. The photoluminescent properties of Zn 2SiO 4:Tb 3+ phosphors have been studied as a function of Tb 3+ doping concentration. Cross-relaxation process between identical Tb 3+ ions results in the quenching of the 5D 3 emission for high concentration sample.

  17. Site selectivity and reversibility in the reactions of titanium hydrazides with Si-H, Si-X, C-X and H+ reagents: Ti=N(α) 1,2-silane addition, Nβ alkylation, Nα protonation and σ-bond metathesis.

    PubMed

    Tiong, Pei Jen; Nova, Ainara; Schwarz, Andrew D; Selby, Jonathan D; Clot, Eric; Mountford, Philip

    2012-02-28

    We report a combined experimental and computational comparative study of the reactions of the homologous titanium dialkyl- and diphenylhydrazido and imido compounds Cp*Ti{MeC(N(i)Pr)(2)}(NNR(2)) (R = Me (1) or Ph (2)) and Cp*Ti{MeC(N(i)Pr)(2)}(NTol) (3) with silanes, halosilanes, alkyl halides and [Et(3)NH][BPh(4)]. Compound 1 underwent reversible Si-H 1,2-addition to Ti=N(α) with RSiH(3) (experimental ΔH ca. -17 kcal mol(-1)), and irreversible addition with PhSiH(2)X (X = Cl, Br). DFT found that the reaction products and certain intermediates were stabilised by β-NMe(2) coordination to titanium. The Ti-D bond in Cp*Ti{MeC(N(i)Pr)(2)}(D){N(NMe(2))SiD(2)Ph} underwent σ-bond metathesis with BuSiH(3) and H(2). Compound 1 reacted with RR'SiCl(2) at N(α) to transfer both Cl atoms to Ti; 2 underwent a similar reaction. Compound 3 did not react with RSiH(3) or alkyl halides but formed unstable Ti=N(α) 1,2-addition or N(α) protonation products with PhSiH(2)X or [Et(3)NH][BPh(4)]. Compound 1 underwent exclusive alkylation at N(β) with RCH(2)X (R = H, Me or Ph; X = Br or I) whereas protonation using [Et(3)NH][BPh(4)] occurred at N(α). DFT studies found that in all cases electrophile addition to N(α) (with or without NMe(2) chelation) was thermodynamically favoured compared to addition to N(β).

  18. Determination of europium content in Li2SiO3(Eu) by neutron activation analysis using Am-Be neutron source.

    PubMed

    Naik, Yeshwant; Tapase, Anant Shamrao; Mhatre, Amol; Datrik, Chandrashekhar; Tawade, Nilesh; Kumar, Umesh; Naik, Haladhara

    2016-12-01

    Circulardiscs of Li2SiO3 doped with europium were prepared and a new activation procedure for the neutron dose estimation in a breeder blanket of fusion reactor is described. The amount of europium in the disc was determined by neutron activation analysis (NAA) using an isotopic neutron source. The average neutron absorption cross section for the reaction was calculated using neutron distribution of the Am-Be source and available neutron absorption cross section data for the (151)Eu(n,γ)(152m)Eu reaction, which was used for estimation of europium in the pallet. The cross section of the elements varies with neutron energy, and the flux of the neutrons in each energy range seen by the nuclei under investigation also varies. Neutron distribution spectrum of the Am-Be source was worked out prior to NAA and the effective fractional flux for the nuclear reaction considered for the flux estimation was also determined.

  19. Luminescence of Nanoporous Si and ALD-Deposited ZnO on Nanoporous Si Substrate

    NASA Astrophysics Data System (ADS)

    Pham, Vuong-Hung; Tam, Phuong Dinh; Dung, Nguyen Huu; Nguyen, Duy-Hung; Huy, Pham Thanh

    2017-03-01

    This paper reports the attempt at synthesizing nanoporous silicon (Si) with a dendritic-like structure and atomic layer deposition (ALD) of ZnO on nanoporous Si to control light emission intensity and emission center by applying an optimum voltage, etching time and thickness of ZnO layer. The dendritic-like structure of nanoporous Si was formed with low etching voltages of 5-10 V. Fourier transform infrared absorption spectra of the nanoporous Si reveals that the intensities of hydride stretching, SiH2 scissor mode and Si-O-Si vibration peak increase with the increasing of etching time. The formation of a thick dendritic-like structure with an increasing SiH2 bond resulted in significant enhancement of luminescence. In addition, the ALD-deposited ZnO layer on nanoporous Si resulted in light emission from both ZnO and nanoporous Si under a single excitation source. These results suggest the potential application of an ALD-deposited ZnO layer on nanoporous Si in designing materials for advanced optoelectronics.

  20. Fabrication and measurement of devices in Si/SiGe nanomembranes

    NASA Astrophysics Data System (ADS)

    Mohr, Robert

    Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large impact on the final quality of the quantum dot as a qubit host. For many years, quantum dots have been fab- ricated on strain-graded heterostructures. Commonly used strain-graded heterostructures inevitably develop plastic defects that lead to interface roughness, crosshatch, and mosaic tilt. All of these factors are sources of disorder in Si/SiGe quantum electronics. In this dissertation, I report the fabrication of Hall bars and gated quantum dots on heterostructures grown on fully elastically relaxed SiGe nanomembranes, rather than strain-graded heterostructures. I report measurements of Hall bars demonstrating the creation of two-dimensional electron gases in these structures. I report the fabrication procedures used to create pairs of Hall bars and quantum dots on individual membranes. In addition, I explain a general process flow for the creation of Si/SiGe quantum devices. I focus especially on an ion-implantation technique I implemented for the fabrication of Hall bars and quantum dots in Si/SiGe heterostructures without modulation doping layers.

  1. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    NASA Astrophysics Data System (ADS)

    Jeon, Hunsoo; Jeon, Injun; Lee, Gang Seok; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2017-01-01

    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone.

  2. Improved source assessment of Si, Al and related mineral components to PM10 based on a daily sampling procedure.

    PubMed

    Peng, Ge; Puxbaum, Hans; Bauer, Heidi; Jankowski, Nicole; Shi, Yao

    2010-01-01

    Samples obtained from an industrialized valley in the East Alpine region were collected daily for a half year and analyzed using X-ray fluorescence to examine the elements Si, Al, Fe, Ca, Mg, Na, K, Zn, P, S and Cl. Some factors affecting the changes of these elements were considered, including time, elemental correlations, weekday, weekend and seasonal changes. Diagnostic analysis provided an insight into a decoupling behavior that occursin siliceous and carbonates minerals. A decrease in Si and Al and an increase in carbonates, Na, K, Zn and P were observed during the cold season. However, a consistently high correlation of Si and Al was observed in all seasons. It was established that such high levels originated from street surface abrasion. The increase in variability and absolute levels of carbonates during the cold season was demonstrated by adding carbonates to the street surface as gritting material to increase the grip on snowy surfaces. A marked increase in Na and Cl was observed in winter which may have been caused by thaw salt that is widely used in winter in Austria. This was associated with a significant increase in K, Zn, and P in the cold season that was the result of domestic space heating with wood. PM10 levels in December were 12 microg/m3 and were higher than levels detected in July. It was established that such high levels originated from mineral oxides, wood smoke, and inorganic ionic material(s).

  3. Fluorescence enhancement of single-phase red-blue emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors via Dy3+ addition for plant cultivation

    NASA Astrophysics Data System (ADS)

    Liu, Ling-Yun; Wang, Da-Jian; Mao, Zhi-Yong; Liu, Yan-Hua; Li, Xue-Zheng; Lu, Qi-Fei

    2009-01-01

    Fluorescence enhancement of red and blue concurrently emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors for plant cultivation has been investigated by Dy3+ addition. The Ba3MgSi2O8:Eu2+,Mn2+,Dy3+(BMS-EMD) phosphors have two-color emissions at the wavelength peak values of 437 nm and 620 nm at the excitation of 350 nm. The two emission bands are coincident with the absorption spectrum for photosynthesis of plants. An obvious enhancement effect has been observed upon addition of Dy3+ with amount of 0.03 mol%, in which the intensities of both blue and red bands reach a maximum. The origin of red and blue emission bands is analysed. The photochromic parameters of the samples at the nearly UV excitation are tested. This fluoresence enhancement is of great significance for special solid state lighting equipment used in plant cultivation.

  4. Stem effect of a Ce3+ doped SiO2 optical dosimeter irradiated with a 192Ir HDR brachytherapy source

    NASA Astrophysics Data System (ADS)

    Carrara, Mauro; Tenconi, Chiara; Guilizzoni, Roberta; Borroni, Marta; Cavatorta, Claudia; Cerrotta, Annamaria; Fallai, Carlo; Gambarini, Grazia; Vedda, Anna; Pignoli, Emanuele

    2014-11-01

    Fiber-optic-coupled scintillation dosimeters are characterized by their small active volume if compared to other existing systems. However, they potentially show a greater stem effect, especially in external beam radiotherapy where the Cerenkov effect is not negligible. In brachytherapy, due to the lower energies and the shorter high dose range of the employed sources, the impact of the stem effect to the detector accuracy might be low. In this work, the stem effect of a Ce3+ doped SiO2 scintillation detector coupled to a SiO2 optical fiber was studied for high dose rate brachytherapy applications. Measurements were performed in a water phantom at changing source-detector mutual positions. The same irradiations were performed with a passive optical fiber, which doesn't have the dosimeter at its end. The relative contribution of the passive fiber with respect to the uncorrected readings of the detector in each one of the investigated source dwell positions was evaluated. Furthermore, the dosimeter was calibrated both neglecting and correcting its response for the passive fiber readings. The obtained absolute dose measurements were then compared to the dose calculations resulting from the treatment planning system. Dosimeter uncertainties with and without taking into account the passive fiber readings were generally below 2.8% and 4.3%, respectively. However, a particular exception results when the source is positioned near to the optical fiber, where the detector underestimates the dose (-8%) or at source-detector longitudinal distances higher than 3 cm. The obtained results show that the proposed dosimeter might be adopted in high dose rate prostate brachytherapy with satisfactory accuracy, without the need for any stem effect correction. However, accuracy further improves by subtraction of the noise signal produced by the passive optical fiber.

  5. Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source-Drain FinFETs

    NASA Astrophysics Data System (ADS)

    Rezali, F. A. Md; Rasid, M. A. S. Abd; Othman, N. A. F.; Hatta, S. Wan Muhamad; Soin, N.

    2017-01-01

    The basic requirements on process design of extremely scaled devices involve appropriate work function and tight doping control due to their significant effect on the threshold voltage as well as other critical electrical parameters such as drive current and leakage. This paper presents a simulation study of 22-nm fin field-effect transistor (FinFET) performance based on various process design considerations including metal gate work function (WF), halo doping (N halo), source/drain doping (N sd), and substrate doping (N sub). The simulations suggest that the n-type FinFET (nFinFET) operates effectively with lower metal gate WF while the p-type FinFET (pFinFET) operates effectively with high metal gate WF in 22-nm strained technology. Further investigation shows that the leakage reduces with increasing N halo, decreasing N sd, and increasing N sub. Taguchi and Pareto analysis-of-variance approaches are applied using an L27 orthogonal array combined with signal-to-noise ratio analysis to determine the best doping concentration combination for 22-nm FinFETs in terms of threshold voltage (V t), saturation current (I on), and off-state current (I off). Since there is a tradeoff between I on and I off, the design with the nominal-is-best V t characteristic is proposed, achieving nominal V t of 0.259 V for the nFinFET and -0.528 V for the pFinFET. Pareto analysis revealed N halo and N sub to be the dominant factor for nFinFET and pFinFET performance, respectively.

  6. Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source-Drain FinFETs

    NASA Astrophysics Data System (ADS)

    Rezali, F. A. Md; Rasid, M. A. S. Abd; Othman, N. A. F.; Hatta, S. Wan Muhamad; Soin, N.

    2017-03-01

    The basic requirements on process design of extremely scaled devices involve appropriate work function and tight doping control due to their significant effect on the threshold voltage as well as other critical electrical parameters such as drive current and leakage. This paper presents a simulation study of 22-nm fin field-effect transistor (FinFET) performance based on various process design considerations including metal gate work function (WF), halo doping ( N halo), source/drain doping ( N sd), and substrate doping ( N sub). The simulations suggest that the n-type FinFET ( nFinFET) operates effectively with lower metal gate WF while the p-type FinFET ( pFinFET) operates effectively with high metal gate WF in 22-nm strained technology. Further investigation shows that the leakage reduces with increasing N halo, decreasing N sd, and increasing N sub. Taguchi and Pareto analysis-of-variance approaches are applied using an L27 orthogonal array combined with signal-to-noise ratio analysis to determine the best doping concentration combination for 22-nm FinFETs in terms of threshold voltage ( V t), saturation current ( I on), and off-state current ( I off). Since there is a tradeoff between I on and I off, the design with the nominal-is-best V t characteristic is proposed, achieving nominal V t of 0.259 V for the nFinFET and -0.528 V for the pFinFET. Pareto analysis revealed N halo and N sub to be the dominant factor for nFinFET and pFinFET performance, respectively.

  7. Observations on the Influence of Secondary Me Oxides Additives (Me=Si,Al, Mg) on the Microstructural Evolution and Mechanical Behavior of Silicon Nitride Ceramics Containing RE2O3 (RE=La, Gd, Lu)

    SciTech Connect

    Becher, Paul F; Averill, Frank; Lin, Hua-Tay; Waters, Shirley B; Shibata, Naoya; Painter, Gayle S; van Benthem, Klaus

    2010-01-01

    The evolution of β Si3N4 microstructures is influenced by the adsorption of rare earth elements at grain surfaces and by the viscosity of the intergranular phases. Theoretical and STEM studies show that the RE atoms exhibit different tendencies to segregate from the liquid phase to grain surfaces and different binding strengths at these surfaces. When combined with MgO (or Al2O3) secondary additions, the rare earth additives are combined in low viscosity intergranular phases during densification and the α to β phase transformation and microstructural evolution are dominated by the RE adsorption behavior. On the other hand, a much higher viscosity intergranular phase forms when the RE2O3 are combined with SiO2. While the rare earth adsorption behavior remains the same, the phase transformation and microstructure are now dominated by Si3N4 solubility and transport in the high liquid phase. By understanding these additive effects, one can develop reinforced microstructures leading silicon nitride ceramics with greatly improved mechanical behavior.

  8. Biochemical methane potential from sewage sludge: Effect of an aerobic pretreatment and fly ash addition as source of trace elements.

    PubMed

    Huiliñir, César; Pinto-Villegas, Paula; Castillo, Alejandra; Montalvo, Silvio; Guerrero, Lorna

    2017-03-18

    The effect of aerobic pretreatment and fly ash addition on the production of methane from mixed sludge is studied. Three assays with pretreated and not pretreated mixed sludge in the presence of fly ash (concentrations of 0, 10, 25, 50, 250 and 500mg/L) were run at mesophilic condition. It was found that the combined use of aerobic pretreatment and fly ash addition increases methane production up to 70% when the fly ash concentrations were lower than 50mg/L, while concentrations higher than 250mg/L cause up to 11% decrease of methane production. For the anaerobic treatment of mixed sludge without pretreatment, the fly ash improved methane generation at all the concentrations studied, with a maximum of 56%. The removal of volatile solids does not show an improvement compared to the separate use of an aerobic pre-treatment and fly ash addition. Therefore, the combined use of the aerobic pre-treatment and fly ash addition improves only the production of methane.

  9. Recent Additions in the Modeling Capabilities of an Open-Source Wave Energy Converter Design Tool: Preprint

    SciTech Connect

    Tom, N.; Lawson, M.; Yu, Y. H.

    2015-04-20

    WEC-Sim is a midfidelity numerical tool for modeling wave energy conversion devices. The code uses the MATLAB SimMechanics package to solve multibody dynamics and models wave interactions using hydrodynamic coefficients derived from frequency-domain boundary-element methods. This paper presents the new modeling features introduced in the latest release of WEC-Sim. The first feature discussed conversion of the fluid memory kernel to a state-space form. This enhancement offers a substantial computational benefit after the hydrodynamic body-to-body coefficients are introduced and the number of interactions increases exponentially with each additional body. Additional features include the ability to calculate the wave-excitation forces based on the instantaneous incident wave angle, allowing the device to weathervane, as well as import a user-defined wave elevation time series. A review of the hydrodynamic theory for each feature is provided and the successful implementation is verified using test cases.

  10. In situ time-resolved X-ray diffraction of tobermorite formation in autoclaved aerated concrete: Influence of silica source reactivity and Al addition

    SciTech Connect

    Matsui, Kunio; Kikuma, Jun; Tsunashima, Masamichi; Ishikawa, Tetsuji; Matsuno, Shin-ya; Ogawa, Akihiro; Sato, Masugu

    2011-05-15

    The hydrothermal formation of tobermorite during the processing of autoclaved aerated concrete was investigated by in situ X-ray diffraction (XRD) analysis. High-energy X-rays from a synchrotron radiation source in combination with a newly developed autoclave cell and a photon-counting pixel array detector were used. To investigate the effects of the silica source, reactive quartz from chert and less-reactive quartz from quartz sand were used as starting materials. The effect of Al addition on tobermorite formation was also studied. In all cases, C-S-H, hydroxylellestadite and katoite were clearly observed as intermediates. Acceleration of tobermorite formation by Al addition was clearly observed. However, Al addition did not affect the dissolution rate of quartz. Two pathways, via C-S-H and katoite, were also observed in the Al-containing system. These results suggest that the structure of initially formed C-S-H is important for the subsequent tobermorite formation reactions.

  11. Effects of Mo additions on the glass-forming ability and magnetic properties of bulk amorphous Fe-C-Si-B-P-Mo alloys

    NASA Astrophysics Data System (ADS)

    Jiao, Zengbao; Li, Hongxiang; Wu, Yuan; Gao, Jingen; Wang, Shanlin; Yi, Seonghoon; Lu, Zhaoping

    2010-03-01

    Glass formation, mechanical and magnetic properties of the Fe76- x C7.0Si3.3B5.0P8.7Mo x ( x=0, 1 at.%, 3 at.% and 5 at.%) alloys prepared using an industrial Fe-P master alloy have been studied. With the substitution of Mo for Fe, glass-forming ability (GFA) was significantly enhanced and fully amorphous rods with a diameter of up to 5 mm were produced in the alloy with 3% Mo. The Mo-containing amorphous alloys also exhibited high fracture strength of 3635-3881 MPa and excellent magnetic properties including a high saturation magnetization of 1.10-1.41 T, a high Curie temperature and a low coercive force. The unique combination of high GFA, high fracture strength and excellent magnetic properties make the newly developed bulk metallic glasses viable for practical engineering applications.

  12. Effects of MgO and Al2O3 Addition on Redox State of Chromium in CaO-SiO2-CrO x Slag System by XPS Method

    NASA Astrophysics Data System (ADS)

    Wang, Li-jun; Yu, Ji-peng; Chou, Kuo-chih; Seetharaman, Seshadri

    2015-08-01

    The effects of MgO and Al2O3 on the redox state of chromium in CaO-SiO2-CrO x system have been investigated at 1873 K (1600 °C) under Ar-CO-CO2 atmosphere and analyzed by means of X-ray photoelectron spectroscopy. From the analysis of the Cr 2p core level spectra, it was found that both Cr(II) and Cr(III) exist simultaneously in CaO-MgO/Al2O3-SiO2-CrO x , and the quantitative ratio Cr(II)/Cr(III) has been obtained by deducing from the area under the computer-resolved peaks. Substitutions of CaO by MgO, SiO2 by Al2O3 favored the Cr(II) state existing in the system in the composition ranges of 3 to 10 wt pct MgO and 5 to 20 pct Al2O3. Meanwhile, from the analysis of the O1s spectra in CaO-MgO-SiO2-CrO x , it was found that the ratio of the non-bridging oxygen content increased first due to the CrO contribution to the electron distribution uniformly as O- at MgO low content. Afterward, it went to decreasing with continuing addition of MgO because ionic contribution of MgO is less than that of CaO and the influence of the CrO clustering on the non-Bridging oxygen is limited due to only 5 wt pct CrO x . In CaO-Al2O3-SiO2-CrO x system, Cr(II) acts as a network modifier to compensate Al3+ charge balance to make the structure stable, so the non-bridge oxygen in this system continues decreasing.

  13. Effect of minor Cu addition on phase evolution and magnetic properties of {[(Fe0.5Co0.5)0.75Si0.05B0.20]0.96Nb0.04}100-x Cux alloys

    NASA Astrophysics Data System (ADS)

    Li, R.; Stoica, M.; Eckert, J.

    2009-01-01

    {[(Fe0.5Co0.5)0.75Si0.05B0.20]0.96Nb0.04}100-xCux (x = 0, 1, 1.5 and 2) alloys with different rapid solidification conditions were prepared by copper mold casting and melt spinning. The structures, the thermal and the magnetic properties were studied by X-ray diffraction, differential scanning calorimetry and vibrating sample magnetometry, respectively. Minor Cu addition obviously depresses the glass-forming ability of the alloys (critical glassy diameter dc < 1 mm) compared with [(Fe0.5Co0.5)0.75Si0.05B0.20]96 Nb4 (dc = 3 mm). The effect of Cu addition on the evolution of crystalline phases corresponding to different rapid solidification conditions was evaluated. The existence of (Fe,Co), (Fe,Co)3B, (Fe,Co)2B and (Fe,Co)23B6 crystalline phases in {[(Fe0.5Co0.5)0.75Si0.05B0.20]0.96 Nb0.04}100-x Cux alloys influences the saturation magnetization compared with the corresponding glassy alloys.

  14. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N2O

    USGS Publications Warehouse

    Moseman-Valtierra, S.; Gonzalez, R.; Kroeger, K.D.; Tang, J.; Chao, W.C.; Crusius, J.; Bratton, J.; Green, A.; Shelton, J.

    2011-01-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N2O, CH4, and CO2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N2O, CH4 and respiratory CO2 fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO3 equivalent to 1.4 g N m-2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N2O and CH4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N2O in July 2009 averaged -33 ??mol N2O m-2 day-1. However, within 1 h of nutrient additions, N2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH4 fluxes were not significantly affected. N2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 ??mol N2O m-2 day-1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N2O and CH4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N2O and CH4 fluxes observed, exceeded half the magnitude of typical

  15. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N2O

    USGS Publications Warehouse

    Moseman-Valtierra, Serena; Gonzalez, Rosalinda; Kroeger, Kevin D.; Tang, Jianwu; Chao, Wei Chun; Crusius, John; Bratton, John; Green, Adrian; Shelton, James

    2011-01-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N2O, CH4, and CO2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N2O, CH4 and respiratory CO2fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO3 equivalent to 1.4 g N m−2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N2O and CH4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N2O in July 2009 averaged −33 μmol N2O m−2 day−1. However, within 1 h of nutrient additions, N2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH4 fluxes were not significantly affected. N2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 μmol N2O m−2 day−1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N2O and CH4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N2O and CH4 fluxes observed, exceeded half

  16. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N 2O

    NASA Astrophysics Data System (ADS)

    Moseman-Valtierra, Serena; Gonzalez, Rosalinda; Kroeger, Kevin D.; Tang, Jianwu; Chao, Wei Chun; Crusius, John; Bratton, John; Green, Adrian; Shelton, James

    2011-08-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N 2O, CH 4, and CO 2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N 2O, CH 4 and respiratory CO 2 fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO 3 equivalent to 1.4 g N m -2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N 2O and CH 4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N 2O in July 2009 averaged -33 μmol N 2O m -2 day -1. However, within 1 h of nutrient additions, N 2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH 4 fluxes were not significantly affected. N 2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 μmol N 2O m -2 day -1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N 2O and CH 4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N 2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N 2O and CH 4 fluxes observed, exceeded half

  17. Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources.

    PubMed

    Sobierajski, R; Bruijn, S; Khorsand, A R; Louis, E; van de Kruijs, R W E; Burian, T; Chalupsky, J; Cihelka, J; Gleeson, A; Grzonka, J; Gullikson, E M; Hajkova, V; Hau-Riege, S; Juha, L; Jurek, M; Klinger, D; Krzywinski, J; London, R; Pelka, J B; Płociński, T; Rasiński, M; Tiedtke, K; Toleikis, S; Vysin, L; Wabnitz, H; Bijkerk, F

    2011-01-03

    We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N2, leading to bubbles inside the multilayer structure.

  18. Influence of Na2SiO3 addition on surface microstructure and cavitation damage characteristics for plasma electrolytic oxidation of Al-Mg alloy

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Hyung; Son, Chang-Ryeon; Kim, Seong-Jong

    2016-01-01

    Recently, plasma electrolytic oxidation (PEO) has emerged as a promising surface modification technique to improve surface properties of Al alloys. In this study, PEO coating process for Al-Mg alloy was conducted with two different electrolyte solutions under the same electrical parameters: one was potassium hydroxide (KOH) aqueous solution, and the other involved potassium hydroxide aqueous solution with sodium silicate (Na2SiO3). The surface morphology was observed with scanning electron microscope (SEM) and elemental compositions were identified with energy dispersive spectroscopy (EDS) analysis. The chemical structures of PEO coatings were identified by X-ray diffraction analysis. Cavitation experiment was performed using ultrasonic vibratory cavitation erosion testing apparatus. Cavitation damage of PEO coatings was characterized using SEM and three-dimensional (3D) microscope. The result indicated that the surface of Al-Mg alloy were successfully modified having complete different surface morphologies by changing electrolyte composition. It was found that the surface morphology had a great influence on the cavitation damage behavior of PEO coating.

  19. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    PubMed

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  20. Populations of Dalapon-decomposing Bacteria in Soil as Influenced by Additions of Dalapon or Other Carbon Sources

    PubMed Central

    Burge, Wylie D.

    1969-01-01

    The numbers of bacteria capable of decomposing the herbicide dalapon were determined for five soils by the most-probable-number method. Before treatment of the soils with dalapon, the numbers varied from 1,000 to 10,000 cells per g of soil. Incubation of the soils with dalapon resulted in large increases (100-fold) in two of three soils in which dalapon was decomposed rapidly. Lack of increase in numbers in spite of rapid decomposition in the other soil probably indicated breakdown by a chemical process or decomposition by fungi. In the remaining two soils, in which decomposition was slow in one and did not occur in the other, the initial numbers were at the low end of the range and the increase was small on incubation with dalapon. Addition of ground alfalfa or ground corn plant material to a soil did not result in significant increases in the numbers of dalapon-decomposing bacteria, either during or after decomposition of the plant material. Glucose depressed the rate of breakdown of dalapon in the soil and increased dalapon-decomposing Bacillus species rather than Arthrobacter and Agrobacterium species, which were found to increase on incubation with dalapon itself. The most-probable-number method appears to be a valuable tool for pesticide-ecology studies. PMID:5772393

  1. Influence of fluoride additions on biological and mechanical properties of Na2O-CaO-SiO2-P2O5 glass-ceramics.

    PubMed

    Li, H C; Wang, D G; Hu, J H; Chen, C Z

    2014-02-01

    Two series of Na2O-CaO-SiO2-P2O5 glass-ceramics doped with NH4HF2 (G-NH4HF2) or CaF2 (G-CaF2) have been prepared by sol-gel method. The glass-ceramic phase composition and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The mechanical properties and thermal expansion coefficient were measured by a microhardness tester, an electronic tensile machine and a thermal expansion coefficient tester. The structure difference between these two glass-ceramics was investigated by Fourier transform infrared spectroscopy (FTIR), and the in vitro bioactivity of the glass-ceramics was determined by in vitro simulated body fluid (SBF) immersion test. The hemolysis test, in vitro cytotoxicity test, systemic toxicity test and the implanted experiment in animals were used to evaluate the biocompatibility of the glass-ceramics. The mechanical properties of sample G-NH4HF2 are lower than that of sample G-CaF2, and the bioactivity of sample G-NH4HF2 is better than that of sample G-CaF2. The thermal expansion coefficients of these two glass-ceramics are all closer to that of Ti6Al4V. After 7 days of SBF immersion, apatites were induced on glass-ceramic surface, indicating that the glass-ceramics have bioactivity. The hemolysis test, in vitro cytotoxicity test and systemic toxicity test demonstrate that the glass-ceramics do not cause hemolysis reaction, and have no toxicity to cell and living animal. The implanted experiment in animals shows that bone tissue can form a good osseointegration with the implant after implantation for two months, indicating that the glass-ceramics are safe to serve as implants.

  2. Formation of hydroxyapatite onto glasses of the CaO-MgO-SiO2 system with B2O3, Na2O, CaF2 and P2O5 additives.

    PubMed

    Agathopoulos, S; Tulyaganov, D U; Ventura, J M G; Kannan, S; Karakassides, M A; Ferreira, J M F

    2006-03-01

    New bioactive glasses with compositions based on the CaO-MgO-SiO(2) system and additives of B(2)O(3), P(2)O(5), Na(2)O, and CaF(2) were prepared. The in vitro mineralization behaviour was tested by immersion of powders or bulk glasses in simulated body fluid (SBF). Monitoring of ionic concentrations in SBF and scanning electron microscopy (SEM) observations at the surface of the glasses were conducted over immersion time. Raman and infrared (IR) spectroscopy shed light on the structural evolution occurring at the surface of the glasses that leads to formation of hydroxyapatite.

  3. The influence of Ga additions on electric and magnetic properties of Co{sub 47}Fe{sub 21}B{sub 21}Si{sub 5}Nb{sub 6} alloy in crystal and liquid states

    SciTech Connect

    Sidorov, V. Rojkov, I.; Mikhailov, V.; Svec, P.; Janickovic, D.

    2015-08-17

    The influence of small additions of gallium on electric resistivity and magnetic susceptibility of the bulk glass forming Co{sub 47}Fe{sub 20.9}B{sub 21.2}Si{sub 4.6}Nb{sub 6.3} alloy was studied in a wide temperature range up to 1830 K. Gallium atoms were found to increase resistivity but decrease susceptibility of the alloy. The suppositions about clusters surrounding Ga atoms in the melt and new GFA criterion are given.

  4. Kinetics of the addition of olefins to Si-centered radicals: the critical role of dispersion interactions revealed by theory and experiment.

    PubMed

    Johnson, Erin R; Clarkin, Owen J; Dale, Stephen G; DiLabio, Gino A

    2015-06-04

    Solution-phase rate constants for the addition of selected olefins to the triethylsilyl and tris(trimethylsilyl)silyl radicals are measured using laser-flash photolysis and competition kinetics. The results are compared with predictions from density functional theory (DFT) calculations, both with and without dispersion corrections obtained from the exchange-hole dipole moment (XDM) model. Without a dispersion correction, the rate constants are consistently underestimated; the errors increase with system size, up to 10(6) s(-1) for the largest system considered. Dispersion interactions preferentially stabilize the transition states relative to the separated reactants and bring the DFT-calculated rate constants into excellent agreement with experiment. Thus, dispersion interactions are found to play a key role in determining the kinetics for addition reactions, particularly those involving sterically bulky functional groups.

  5. Reducing contralateral SI activity reveals hindlimb receptive fields in the SI forelimb-stump representation of neonatally amputated rats.

    PubMed

    Pluto, Charles P; Chiaia, Nicolas L; Rhoades, Robert W; Lane, Richard D

    2005-09-01

    In adult rats that sustained forelimb amputation on the day of birth, >30% of multiunit recording sites in the forelimb-stump representation of primary somatosensory cortex (SI) also respond to cutaneous hindlimb stimulation when cortical GABA(A+B) receptors are blocked (GRB). This study examined whether hindlimb receptive fields could also be revealed in forelimb-stump sites by reducing one known source of excitatory input to SI GABAergic neurons, the contralateral SI cortex. Corpus callosum projection neurons connect homotopic SI regions, making excitatory contacts onto pyramidal cells and interneurons. Thus in addition to providing monosynaptic excitation in SI, callosal fibers can produce disynaptic inhibition through excitatory synapses with inhibitory interneurons. Based on the latter of these connections, we hypothesized that inactivating the contralateral (intact) SI forelimb region would "unmask" normally suppressed hindlimb responses by reducing the activity of SI GABAergic neurons. The SI forelimb-stump representation was first mapped under normal conditions and then during GRB to identify stump/hindlimb responsive sites. After GRB had dissipated, the contralateral (intact) SI forelimb region was mapped and reversibly inactivated with injections of 4% lidocaine, and selected forelimb-stump sites were retested. Contralateral SI inactivation revealed hindlimb responses in approximately 60% of sites that were stump/hindlimb responsive during GRB. These findings indicate that activity in the contralateral SI contributes to the suppression of reorganized hindlimb receptive fields in neonatally amputated rats.

  6. Sintering oxide ceramics based on AI2O3 and ZrO2, activated by MgO, TiO2 and SiO2 additives

    NASA Astrophysics Data System (ADS)

    Matrenin, S. V.; Zenin, B. S.; Tayukin, R. V.

    2016-11-01

    The positive effect of the addition of MgO and TiO2 in an amount of no more than 1 wt. % on sintering and physico-mechanical properties of alumina ceramics is established. Addition of 5% of SiO2 to A12O3 provides the mechanism of liquid phase sintering of ceramics, which leads to increase in its density and strength up to 480 MPa. In ceramic system A12O3 - ZrO2 - Y2O3 highest level of physical and mechanical properties of the composition had a hypereutectic composition 16.6% A12O3 - 76% Z1O2 - 7.4% Y2O3. In this composition two mechanisms of hardening are realized simultaneously, such as transformational hardening by t- m - ZrO2 transition and dispersion strengthening with high-modulus particles of α- A12O3.

  7. Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Noh, Young Kyun; Lee, Sang Tae; Kim, Moon Deock; Oh, Jae Eung

    2017-02-01

    Iron doped GaN layers were grown on (110) Si substrates by ammonia molecular beam epitaxy (MBE) using solid elemental iron as a source. Specular films with concentrations up to 1×1020 cm-3, as determined by secondary ion mass spectroscopy, were grown, unlike a limited incorporation of Fe into GaN by metal-rich rf plasma MBE. The Fe concentration in the film showed an exponential dependence on the inverse of source temperature with an activation energy of 3.4 eV, which agrees well to the reported value for the sublimation of Fe. A 1.5 μm thick GaN film with a sheet resistance of 1 GΩ/sq. was obtained by compensating unintentional residual donors with a small Fe concentration of 1×1017 cm-3. X-ray diffraction rocking curves indicated high crystalline quality, very similar to an undoped film, showing that the Fe incorporation required to obtain the semi-insulating film properties did not affect the structural properties of the film. The low-temperature PL spectra of highly resistive and semi-insulating Fe:GaN in the range of 1017 1018 cm-3 show dominant exciton emissions and enhanced donor-acceptor-pair (DAP) emissions, implying that Fe ions contribute to the DAP transition between donor levels and Fe-related acceptor levels, possibly compensating the residual donors to achieve the semi-insulating electrical properties.

  8. Boron Nitride Obtained from Molecular Precursors: Aminoboranes Used as a BN Source for Coatings, Matrix, and Si 3N 4-BN Composite Ceramic Preparation

    NASA Astrophysics Data System (ADS)

    Thévenot, F.; Doche, C.; Mongeot, H.; Guilhon, F.; Miele, P.; Cornu, D.; Bonnetot, B.

    1997-10-01

    Aminoboranes, pure or partially converted into aminoborazines using thermal or aminolysis polymerization, have been used as boron nitride precursors. An amorphous BN preceramic is obtained when pyrolysed up to 1000°C that can be stabilized using further annealing up to 1400°C or crystallized into h-BN above 1700°C. These molecular precursors have been used to prepare carbon fiber/BN matrix microcomposites to get an efficient BN coating on graphite and as a BN source in Si3N4/BN composite ceramic. The properties of these new types of samples have been compared with those obtained by classical processes. The boron nitride obtained from these precursors is a good sintering agent during the hot-pressing of the samples. However, the crystallinity of BN, even sintered up to 1800°C, remains poor. In fact, most of the mechanical properties of the composite ceramic (density, porosity, hardness) are clearly improved and the aminoboranes can be considered as convenient boron nitride sources and helpful sintering agents in hot-pressing technology.

  9. Ultrahigh B doping ({<=}10{sup 22} cm{sup -3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

    SciTech Connect

    Glass, G.; Kim, H.; Desjardins, P.; Taylor, N.; Spila, T.; Lu, Q.; Greene, J. E.

    2000-03-15

    Si(001) layers doped with B concentrations C{sub B} between 1x10{sup 17} and 1.2x10{sup 22} cm{sup -3} (24 at %) were grown on Si(001)2x1 at temperatures T{sub s}=500-850 degree sign C by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6}. C{sub B} increases linearly with the incident precursor flux ratio J{sub B{sub 2}}{sub H{sub 6}}/J{sub Si{sub 2}}{sub H{sub 6}} and B is incorporated into substitutional electrically active sites at concentrations up to C{sub B}{sup *}(T{sub s}) which, for T{sub s}=600 degree sign C, is 2.5x10{sup 20} cm{sup -3}. At higher B concentrations, C{sub B} increases faster than J{sub B{sub 2}}{sub H{sub 6}}/J{sub Si{sub 2}}{sub H{sub 6}} and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of N{sub B}=1.3x10{sup 21} cm{sup -3} with C{sub B}=1.2x10{sup 22} cm{sup -3}. High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of C{sub B} and T{sub s}, are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction a{sub (perpendicular} {sub sign)} decreases linearly with increasing C{sub B} up to the limit of full electrical activation and continues to decrease, but nonlinearly, with C{sub B}>C{sub B}{sup *}. Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to C{sub B}=2.5x10{sup 20} and 2x10{sup 21} cm{sup -3}, respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage {theta}{sub B,sat} of 0.5 ML (corresponding to C{sub B}=C{sub B}{sup *}). At higher C{sub B} (i.e., {theta}{sub B}>{theta}{sub B,sat}), B accumulates in the upper layer as

  10. Addition Reactions of Me3 SiCN with Aldehydes Catalyzed by Aluminum Complexes Containing in their Coordination Sphere O, S, and N Ligands.

    PubMed

    Yang, Zhi; Yi, Yafei; Zhong, Mingdong; De, Sriman; Mondal, Totan; Koley, Debasis; Ma, Xiaoli; Zhang, Dongxiang; Roesky, Herbert W

    2016-05-10

    The reaction of one equivalent of LAlH2 (1; L=HC(CMeNAr)2 , Ar=2,6-iPr2 C6 H3 , β-diketiminate ligand) with two equivalents of 2-mercapto-4,6-dimethylpyrimidine hydrate resulted in LAl[(μ-S)(m-C4 N2 H)(CH2 )2 ]2 (2) in good yield. Similarly, when N-2-pyridylsalicylideneamine, N-(2,6-diisopropylphenyl)salicylaldimine, and ethyl 3-amino-4,5,6,7-tetrahydrobenzo[b]thiophene-2-carboxylate were used as starting materials, the corresponding products LAl[(μ-O)(o-C6 H4 )CN(C5 NH4 )]2 (3), LAlH[(μ-O)(o-C4 H4 )CN(2,6-iPr2 C6 H3 )] (4), and LAl[(μ-NH)(o-C8 SH8 )(COOC2 H5 )]2 (5) were isolated. Compounds 2-5 were characterized by (1) H and (13) C NMR spectroscopy as well as by single-crystal X-ray structural analysis. Surprisingly, compounds 2-5 exhibit good catalytic activity in addition reactions of aldehydes with trimethylsilyl cyanide (TMSCN).

  11. Zircon Hf isotopic constraints on the mantle source of felsic magmatic rocks in the Phan Si Pan uplift and Tu Le basin, northern Vietnam

    NASA Astrophysics Data System (ADS)

    Usuki, T.; Lan, C.; Tran, T.; Pham, T.; Wang, K.

    2013-12-01

    Permian plume-related rocks, such as picrites, flood basalts and silicic volcanic rocks occur in northern Vietnam. This area was displaced 600 km southeastward along the Ailao Shan-Red River fault during mid-Tertiary in response to the India-Eurasia collision. The original location of the area was situated at the central Emeishan Large Igneous Province (ELIP) in SW China before Tertiary. The picrites and flood basalts in northern Vietnam have been investigated by many authors and are comparable with the ELIP. While, felsic magmatisms in northern Vietnam has been poorly studied. Zircon U-Pb age and Hf isotopic data are useful to compare the felsic magmatism in northern Vietnam with that in the ELIP, because the magmatisms of the ELIP had a characteristic time period (260-250 Ma) and the Hf isotopes show a remarkable mantle signature. Therefore, this study carried out in-situ U-Pb ages and Hf isotopic compositions for 300 zircon grains in eighteen granitoids and rhyolites in Phan Si Pan uplift and Tu Le basin in northern Vietnam. Zircons from the granitoids and rhyolites occasionally show development of {101} pyramid and {100} prism crystal facies, suggesting typical zircons crystallized from high temperature alkaline granite. 206Pb/238U ages of granitoid and rhyolite yield consistently in a narrow range of 260 to 250 Ma, which coincides with those from peralkaline to metaluminous granites in the ELIP. ɛHf(t) values of zircons in rhyolites and granites of this study dominate in the range of +5 to +10, which is consistent with those from the ELIP. U-Pb ages and Hf isotopic compositions of zircons indicate that felsic magmatic rocks in the Phan Si Pan uplift and Tu La basin have been derived from the same mantle source with the ELIP.

  12. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

  13. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

  14. Determination of additivity of apparent and standardized ileal digestibility of amino acids in diets containing multiple protein sources fed to growing pigs.

    PubMed

    Xue, P C; Ragland, D; Adeola, O

    2014-09-01

    An experiment was conducted in growing pigs to investigate the additivity of apparent ileal digestibility (AID) or standardized ileal digestibility (SID) of CP and AA in mixed diets containing multiple protein sources. Using the determined AID or SID for CP and AA in corn, soybean meal (SBM), corn distillers' dried grains with solubles (DDGS), or canola meal (CM), the AID or SID for 4 mixed diets based on corn-SBM, corn-SBM-DDGS, corn-SBM-CM, or corn-SBM-DDGS-CM were predicted and compared with determined AID or SID, respectively. Eighteen growing pigs (initial BW = 61.3 ± 5.5 kg) were surgically fitted with T-cannulas and assigned to a duplicated 9 × 4 incomplete Latin square design with 9 diets and 4 periods. The 9 experimental diets consisted of a nitrogen-free diet (NFD) to estimate basal ileal endogenous loss (BEL) of AA, 4 semipurified diets to determine the AID and SID of CP and AA in the 4 ingredients, and 4 mixed diets to test the additivity of AID and SID. Chromic oxide was added as an indigestible marker. Pigs were fed 1 of the 9 diets during each 7-d period, and ileal digesta were collected on d 6 and 7, from 0800 to 1800 h. The analyzed AA levels for the mixed diets were close to the calculated values based on the AA composition of each ingredient. The results revealed that the predicted SID were consistent with determined values, except for Leu, Thr, Asp, Cys, Pro, and Ser in the corn-SBM diet and Met and Cys in the corn-SBM-DDGS diet. The determined AID for total AA and Arg, His, Trp, Gly, and Pro in the corn-SBM diet were greater (P < 0.05) than predicted. For the corn-SBM-DDGS diet, the determined AID were greater (P < 0.05) than predicted AID for CP, total AA, and all AA except for Arg, Leu, and Pro. In the corn-SBM-CM diet, the determined AID were greater (P < 0.05) than predicted AID for Arg, Cys, and Gly. When compared with determined values, predicted AID in the corn-SBM-DDGS-CM diet were lower (P < 0.05) for total AA and Arg, Met, Cys, and

  15. Increasing fermentation efficiency at high sugar concentrations by supplementing an additional source of nitrogen during the exponential phase of the tequila fermentation process.

    PubMed

    Arrizon, Javier; Gschaedler, Anne

    2002-11-01

    In the tequila industry, fermentation is traditionally achieved at sugar concentrations ranging from 50 to 100 g x L(-1). In this work, the behaviour of the Saccharomyces cerevisiae yeast (isolated from the juices of the Agave tequilana Weber blue variety) during the agave juice fermentation is compared at different sugar concentrations to determine if it is feasible for the industry to run fermentation at higher sugar concentrations. Fermentation efficiency is shown to be higher (above 90%) at a high concentration of initial sugar (170 g x L(-1)) when an additional source of nitrogen (a mixture of amino acids and ammonium sulphate, different than a grape must nitrogen composition) is added during the exponential growth phase.

  16. Optimization of anaerobically digested distillery molasses spent wash decolorization using soil as inoculum in the absence of additional carbon and nitrogen source.

    PubMed

    Adikane, H V; Dange, M N; Selvakumari, K

    2006-11-01

    The aim of this study was to achieve maximum decolorization of molasses spent wash (MSW) in absence of any additional carbon or nitrogen source using soil as inoculum. Soil samples were collected from the MSW disposal site. Colored soil samples exhibited higher pH, sugar and protein as compare to less colored samples. A decolorization of 69% was obtained using 10% (w/v) soil and 12.5% (v/v) MSW after 7 days incubation. Optimized parameters including days--6 days, pH--6, MSW--12.5% and soil concentration--40%, were obtained for maximum decolorization. A decolorization of 81% was achieved using 10% soil and 12.5% MSW after 18 days incubation in absence of any media supplement. Nearly 12% reduction in decolorization activity of the soil sample was observed over a period of 12 months when stored at 6 degrees C. It could be concluded that the decolorization of MSW might be achieved using soil as inoculum without addition of chemical amendments.

  17. Polyvinyl alcohol gelation: A structural locking-up agent and carbon source for Si/CNT/C composites as high energy lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Chen, Dingqiong; Liao, Wenjuan; Yang, Yang; Zhao, Jinbao

    2016-05-01

    A novel polyvinyl alcohol (PVA) hydrogel method is developed to synthesize Si/CNT/C composites. The Si nanoparticles and CNTs are 'position' locked up by PVA hydrogel in a simple aqueous solution process, and then the Si-CNT-PVA hydrogel has pyrolyzed to form Si/CNT/C composites. In this unique structured Si/CNT/C composites, the CNTs form a porous network acting both as conductive agent for electron transfer and buffer space to accommodate huge Si volume change during lithiation/delithiation process, while the coating layer of carbon carbonized from polyvinyl alcohol (PVA) hydrogel is conducive to stabilize the interweaved composite structure. The complex structures of Si/CNT/C composites and their electrochemical properties are presented in this paper. The Si/CNT/C composites exhibit an initial reversible capacity of nearly 800 mAhg-1, an excellent capacity retention of 97.1% after 100 cycles at the rate of 0.1 C, and high capacity retention even at high current rate.

  18. MoSi2-Base Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    2003-01-01

    Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

  19. Spectrometric analysis of process etching solutions of the photovoltaic industry--determination of HNO3, HF, and H2SiF6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms.

    PubMed

    Bücker, Stefan; Acker, Jörg

    2012-05-30

    The surface of raw multicrystalline silicon wafers is treated with HF-HNO(3) mixtures in order to remove the saw damage and to obtain a well-like structured surface of low reflectivity, the so-called texture. The industrial production of solar cells requires a consistent level of texturization for tens of thousands of wafers. Therefore, knowing the actual composition of the etch bath is a key element in process control in order to maintain a certain etch rate through replenishment of the consumed acids. The present paper describes a novel approach to quantify nitric acid (HNO(3)), hydrofluoric acid (HF), and hexafluosilicic acid (H(2)SiF(6)) using a high-resolution continuum source graphite furnace absorption spectrometer. The concentrations of Si (via Si atom absorption at the wavelength 251.611 nm, m(0),(Si)=130 pg), of nitrate (via molecular absorption of NO at the wavelength 214.803 nm, [Formula: see text] ), and of total fluoride (via molecular absorption of AlF at the wavelength 227.46 nm, m(0,F)=13 pg) were measured against aqueous standard solutions. The concentrations of H(2)SiF(6) and HNO(3) are directly obtained from the measurements. The HF concentration is calculated from the difference between the total fluoride content, and the amount of fluoride bound as H(2)SiF(6). H(2)SiF(6) and HNO(3) can be determined with a relative uncertainty of less than 5% and recoveries of 97-103% and 96-105%, respectively. With regards to HF, acceptable results in terms of recovery and uncertainty are obtained for HF concentrations that are typical for the photovoltaic industry. The presented procedure has the unique advantage that the concentration of both, acids and metal impurities in etch solutions, can be routinely determined by a single analytical instrument.

  20. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    SciTech Connect

    Szymański, Tomasz Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  1. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    NASA Astrophysics Data System (ADS)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  2. Dual-source dual-energy CT with additional tin filtration: Dose and image quality evaluation in phantoms and in-vivo

    PubMed Central

    Primak, Andrew N.; Giraldo, Juan Carlos Ramirez; Eusemann, Christian D.; Schmidt, Bernhard; Kantor, B.; Fletcher, Joel G.; McCollough, Cynthia H.

    2010-01-01

    Purpose To investigate the effect on radiation dose and image quality of the use of additional spectral filtration for dual-energy CT (DECT) imaging using dual-source CT (DSCT). Materials and Methods A commercial DSCT scanner was modified by adding tin filtration to the high-kV tube, and radiation output and noise measured in water phantoms. Dose values for equivalent image noise were compared among DE-modes with and without tin filtration and single-energy (SE) mode. To evaluate DECT material discrimination, the material-specific DEratio for calcium and iodine were determined using images of anthropomorphic phantoms. Data were additionally acquired in 38 and 87 kg pigs, and noise for the linearly mixed and virtual non-contrast (VNC) images compared between DE-modes. Finally, abdominal DECT images from two patients of similar sizes undergoing clinically-indicated CT were compared. Results Adding tin filtration to the high-kV tube improved the DE contrast between iodine and calcium as much as 290%. Pig data showed that the tin filtration had no effect on noise in the DECT mixed images, but decreased noise by as much as 30% in the VNC images. Patient VNC-images acquired using 100/140 kV with added tin filtration had improved image quality compared to those generated with 80/140 kV without tin filtration. Conclusion Tin filtration of the high-kV tube of a DSCT scanner increases the ability of DECT to discriminate between calcium and iodine, without increasing dose relative to SECT. Furthermore, use of 100/140 kV tube potentials allows improved DECT imaging of large patients. PMID:20966323

  3. Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

    NASA Astrophysics Data System (ADS)

    Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

    2017-03-01

    The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

  4. [Underreporting of tuberculosis in the Information System on Notifiable Diseases (SINAN): primary default and case detection from additional data sources using probabilistic record linkage].

    PubMed

    Pinheiro, Rejane Sobrino; Andrade, Vanusa de Lemos; Oliveira, Gisele Pinto de

    2012-08-01

    This study aimed to analyze underreporting of tuberculosis (TB) cases in the Information System on Notifiable Diseases (SINAN), based on the following data sources: Mortality Information System (SIM), Registry and Follow-up Book for TB Case Treatment (LPATB), and Laboratory Registry Book (LRLAB). Probabilistic record linkage was used between the SIM (2007-2008) and SINAN (2002-2008). A search was conducted in LPATB and LRLAB (2007-2008) for cases not recorded in SINAN. There were 125 deaths, of which 44.8% were not recorded in SINAN. In LPATB, 58 cases (5.1%) were in treatment and were not reported in SINAN. LRLAB showed 32 smear-positive cases not reported to SINAN and without treatment, representing primary default. Addition of the retrieved cases, led to a 14.6% increase in the incidence rate in 2007 and 11.6% in 2008. Underreporting of deaths from or with TB in the Mortality Information System and primary default revealed difficulties in access to adequate and timely treatment, calling for rethinking of strategies to detect cases for timely treatment.

  5. Effect of high-pressure/temperature (HP/T) treatments of in-package food on additive migration from conventional and bio-sourced materials.

    PubMed

    Mauricio-Iglesias, M; Jansana, S; Peyron, S; Gontard, N; Guillard, V

    2010-01-01

    Migration was assessed during and after two high-pressure/temperature (HP/T) treatments intended for a pasteurization (800 MPa for 5 min, from 20 to 40 degrees C) and a sterilization treatment (800 MPa for 5 min, from 90 to 115 degrees C) and were compared with conventional pasteurization and sterilization, respectively. The specific migration of actual packaging additives used as antioxidants and ultraviolet light absorbers (Irganox 1076, Uvitex OB) was investigated in a number of food-packaging systems combining one synthetic common packaging (LLDPE) and a bio-sourced one (PLA) in contact with the four food-simulating liquids defined by European Commission regulations. After standard HP/T processing, migration kinetics was followed during the service life of the packaging material using Fourier transform infrared spectrometer (FTIR) spectroscopy. LLDPE withstood the high-pressure sterilization, whereas it melted during the conventional sterilization. No difference was observed on migration from LLDPE for both treatments. In the case of PLA, migration of Uvitex OB was very low or not detectable for all the cases studied.

  6. Effect of Bi(Mg1/2Ti1/2)O3 addition on the electrical properties of Si-Mn modified on SrTiO3

    NASA Astrophysics Data System (ADS)

    Roh, Yoon-ah; Masaki, Takaki; Yoon, Dae-Ho

    2015-05-01

    Single-Crystalline Strontium titanate (SrTiO3) has been widely used in many fields such as catalyst, semiconductors and dielectrics. SrTiO3 is a typical perovskite-type oxide, the physical properties of which strongly depend on its chemical composition, structure, shape, size, and crystallinity. In this work, the effects of Bi(Mg1/2Ti1/2)O3 addition on the nanostructure and the dielectric properties of Si-Mn modified SrTiO3 were investigated to develop nano-sized particles and low-temperature-fired SrTiO3-based ceramics with stable temperature characteristics. The dielectric constant of SrTiO3-Bi(Mg1/2Ti1/2)O3 was found to range from 900 to 1200 at 1 kHz for samples sintered at 1200°C. This new composition, SrTiO3-Bi(Mg1/2Ti1/2)O3, can be applied as a nano-sized dielectric materials in various fields.

  7. The Banhadão Alkaline Complex, Southeastern Brazil: source and evolution of potassic SiO2-undersaturated high-Ca and low-Ca magmatic series

    NASA Astrophysics Data System (ADS)

    Ruberti, Excelso; Enrich, Gaston E. R.; Azzone, Rogério G.; Comin-Chiaramonti, Piero; de Min, Angelo; Gomes, Celso B.

    2012-01-01

    The Cretaceous Banhadão alkaline complex in southeastern Brazil presents two potassic SiO2-undersaturated series. The high-Ca magmatic series consist of initially fractionated olivine (Fo92-91) + diopside (Wo48-43En49-35Ae0-7), as evidenced by the presence of xenocrysts and xenoliths. In that sequence, diopside (Wo47-38En46-37Ae0-8) + phlogopite + apatite + perovskite (Prv>92) crystallized to form the phlogopite melteigite and led to the Ca enrichment of the magma. Diopside (Wo47-41En32-24 Ae3-14) continued to crystallize as an early mafic mineral, followed by nepheline (Ne74.8-70.1Ks26.3-21.2Qz7.6-0.9) and leucite (Lc65-56) and subsequently by melanite and potassic feldspar (Or85-99Ab1-7) to form melanite ijolites, wollastonite-melanite urtites and melanite-nepheline syenites. Melanite-pseudoleucite-nepheline syenites are interpreted to be a leucite accumulation. Melanite nephelinite dykes are believed to represent some of the magmatic differentiation steps. The low-Ca magmatic series is representative of a typical fractionation of aegirine-augite (Wo36-29En25-4Ae39-18) + alkali feldspar (Or57-96Ab3-43) + nepheline (Ne76.5-69.0Ks19.9-14.4Qz15.1-7.7) + titanite from phonolite magma. The evolution of this series from potassic nepheline syenites to sodic sodalite syenites and sodalitolites is attributed to an extensive fractionation of potassic feldspar, which led to an increase of the NaCl activity in the melt during the final stages forming sodalite-rich rocks. Phonolite dykes followed a similar evolutionary process and also registered some crustal assimilation. The mesocratic nepheline syenites showed interactions with phlogopite melteigites, such as compatible trace element enrichments and the presence of diopside xenocrysts, which were interpreted to be due to a mixing/mingling process of phonolite and nephelinite magmas. The geochemical data show higher TiO2 and P2O5 contents and lower SiO2 contents for the high-Ca series and different LILE evolution trends

  8. Estimating PM2.5 Concentrations in Xi'an City Using a Generalized Additive Model with Multi-Source Monitoring Data

    PubMed Central

    Song, Yong-Ze; Yang, Hong-Lei; Peng, Jun-Huan; Song, Yi-Rong; Sun, Qian; Li, Yuan

    2015-01-01

    Particulate matter with an aerodynamic diameter <2.5 μm (PM2.5) represents a severe environmental problem and is of negative impact on human health. Xi'an City, with a population of 6.5 million, is among the highest concentrations of PM2.5 in China. In 2013, in total, there were 191 days in Xi’an City on which PM2.5 concentrations were greater than 100 μg/m3. Recently, a few studies have explored the potential causes of high PM2.5 concentration using remote sensing data such as the MODIS aerosol optical thickness (AOT) product. Linear regression is a commonly used method to find statistical relationships among PM2.5 concentrations and other pollutants, including CO, NO2, SO2, and O3, which can be indicative of emission sources. The relationships of these variables, however, are usually complicated and non-linear. Therefore, a generalized additive model (GAM) is used to estimate the statistical relationships between potential variables and PM2.5 concentrations. This model contains linear functions of SO2 and CO, univariate smoothing non-linear functions of NO2, O3, AOT and temperature, and bivariate smoothing non-linear functions of location and wind variables. The model can explain 69.50% of PM2.5 concentrations, with R2 = 0.691, which improves the result of a stepwise linear regression (R2 = 0.582) by 18.73%. The two most significant variables, CO concentration and AOT, represent 20.65% and 19.54% of the deviance, respectively, while the three other gas-phase concentrations, SO2, NO2, and O3 account for 10.88% of the total deviance. These results show that in Xi'an City, the traffic and other industrial emissions are the primary source of PM2.5. Temperature, location, and wind variables also non-linearly related with PM2.5. PMID:26540446

  9. Estimating PM2.5 Concentrations in Xi'an City Using a Generalized Additive Model with Multi-Source Monitoring Data.

    PubMed

    Song, Yong-Ze; Yang, Hong-Lei; Peng, Jun-Huan; Song, Yi-Rong; Sun, Qian; Li, Yuan

    2015-01-01

    Particulate matter with an aerodynamic diameter <2.5 μm (PM2.5) represents a severe environmental problem and is of negative impact on human health. Xi'an City, with a population of 6.5 million, is among the highest concentrations of PM2.5 in China. In 2013, in total, there were 191 days in Xi'an City on which PM2.5 concentrations were greater than 100 μg/m3. Recently, a few studies have explored the potential causes of high PM2.5 concentration using remote sensing data such as the MODIS aerosol optical thickness (AOT) product. Linear regression is a commonly used method to find statistical relationships among PM2.5 concentrations and other pollutants, including CO, NO2, SO2, and O3, which can be indicative of emission sources. The relationships of these variables, however, are usually complicated and non-linear. Therefore, a generalized additive model (GAM) is used to estimate the statistical relationships between potential variables and PM2.5 concentrations. This model contains linear functions of SO2 and CO, univariate smoothing non-linear functions of NO2, O3, AOT and temperature, and bivariate smoothing non-linear functions of location and wind variables. The model can explain 69.50% of PM2.5 concentrations, with R2 = 0.691, which improves the result of a stepwise linear regression (R2 = 0.582) by 18.73%. The two most significant variables, CO concentration and AOT, represent 20.65% and 19.54% of the deviance, respectively, while the three other gas-phase concentrations, SO2, NO2, and O3 account for 10.88% of the total deviance. These results show that in Xi'an City, the traffic and other industrial emissions are the primary source of PM2.5. Temperature, location, and wind variables also non-linearly related with PM2.5.

  10. Inductively coupled plasma spectrometry: Noise characteristics of aerosols, application of generalized standard additions method, and Mach disk as an emission source

    SciTech Connect

    Luan, Shen

    1995-10-06

    This dissertation is focused on three problem areas in the performance of inductively coupled plasma (ICP) source. The noise characteristics of aerosols produced by ICP nebulizers are investigated. A laser beam is scattered by aerosol and detected by a photomultiplier tube and the noise amplitude spectrum of the scattered radiation is measured by a spectrum analyzer. Discrete frequency noise in the aerosol generated by a Meinhard nebulizer or a direct injection nebulizer is primarily caused by pulsation in the liquid flow from the pump. A Scott-type spray chamber suppresses white noise, while a conical, straight-pass spray chamber enhances white noise, relative to the noise seen from the primary aerosol. Simultaneous correction for both spectral interferences and matrix effects in ICP atomic emission spectrometry (AES) can be accomplished by using the generalized standard additions method (GSAM). Results obtained with the application of the GSAM to the Perkin-Elmer Optima 3000 ICP atomic emission spectrometer are presented. The echelle-based polychromator with segmented-array charge-coupled device detectors enables the direct, visual examination of the overlapping lines Cd (1) 228.802 nm and As (1) 228.812 nm. The slit translation capability allows a large number of data points to be sampled, therefore, the advantage of noise averaging is gained. An ICP is extracted into a small quartz vacuum chamber through a sampling orifice in a water-cooled copper plate. Optical emission from the Mach disk region is measured with a new type of echelle spectrometer equipped with two segmented-array charge-coupled-device detectors, with an effort to improve the detection limits for simultaneous multielement analysis by ICP-AES.

  11. The effectiveness of power-generating complexes constructed on the basis of nuclear power plants combined with additional sources of energy determined taking risk factors into account

    NASA Astrophysics Data System (ADS)

    Aminov, R. Z.; Khrustalev, V. A.; Portyankin, A. V.

    2015-02-01

    The effectiveness of combining nuclear power plants equipped with water-cooled water-moderated power-generating reactors (VVER) with other sources of energy within unified power-generating complexes is analyzed. The use of such power-generating complexes makes it possible to achieve the necessary load pickup capability and flexibility in performing the mandatory selective primary and emergency control of load, as well as participation in passing the night minimums of electric load curves while retaining high values of the capacity utilization factor of the entire power-generating complex at higher levels of the steam-turbine part efficiency. Versions involving combined use of nuclear power plants with hydrogen toppings and gas turbine units for generating electricity are considered. In view of the fact that hydrogen is an unsafe energy carrier, the use of which introduces additional elements of risk, a procedure for evaluating these risks under different conditions of implementing the fuel-and-hydrogen cycle at nuclear power plants is proposed. Risk accounting technique with the use of statistical data is considered, including the characteristics of hydrogen and gas pipelines, and the process pipelines equipment tightness loss occurrence rate. The expected intensities of fires and explosions at nuclear power plants fitted with hydrogen toppings and gas turbine units are calculated. In estimating the damage inflicted by events (fires and explosions) occurred in nuclear power plant turbine buildings, the US statistical data were used. Conservative scenarios of fires and explosions of hydrogen-air mixtures in nuclear power plant turbine buildings are presented. Results from calculations of the introduced annual risk to the attained net annual profit ratio in commensurable versions are given. This ratio can be used in selecting projects characterized by the most technically attainable and socially acceptable safety.

  12. The Multi-allelic Genetic Architecture of a Variance-Heterogeneity Locus for Molybdenum Concentration in Leaves Acts as a Source of Unexplained Additive Genetic Variance

    PubMed Central

    Forsberg, Simon K. G.; Andreatta, Matthew E.; Huang, Xin-Yuan; Danku, John; Salt, David E.; Carlborg, Örjan

    2015-01-01

    Genome-wide association (GWA) analyses have generally been used to detect individual loci contributing to the phenotypic diversity in a population by the effects of these loci on the trait mean. More rarely, loci have also been detected based on variance differences between genotypes. Several hypotheses have been proposed to explain the possible genetic mechanisms leading to such variance signals. However, little is known about what causes these signals, or whether this genetic variance-heterogeneity reflects mechanisms of importance in natural populations. Previously, we identified a variance-heterogeneity GWA (vGWA) signal for leaf molybdenum concentrations in Arabidopsis thaliana. Here, fine-mapping of this association reveals that the vGWA emerges from the effects of three independent genetic polymorphisms that all are in strong LD with the markers displaying the genetic variance-heterogeneity. By revealing the genetic architecture underlying this vGWA signal, we uncovered the molecular source of a significant amount of hidden additive genetic variation or “missing heritability”. Two of the three polymorphisms underlying the genetic variance-heterogeneity are promoter variants for Molybdate transporter 1 (MOT1), and the third a variant located ~25 kb downstream of this gene. A fourth independent association was also detected ~600 kb upstream of MOT1. Use of a T-DNA knockout allele highlights Copper Transporter 6; COPT6 (AT2G26975) as a strong candidate gene for this association. Our results show that an extended LD across a complex locus including multiple functional alleles can lead to a variance-heterogeneity between genotypes in natural populations. Further, they provide novel insights into the genetic regulation of ion homeostasis in A. thaliana, and empirically confirm that variance-heterogeneity based GWA methods are a valuable tool to detect novel associations of biological importance in natural populations. PMID:26599497

  13. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; Gunapala, S. D.

    1994-01-01

    Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

  14. Effect of combined addition of nano-SiC and nano-Ho2O3 on the in-field critical current density of MgB2 superconductor

    NASA Astrophysics Data System (ADS)

    Varghese, Neson; Vinod, K.; Chattopadhyay, M. K.; Roy, S. B.; Syamaprasad, U.

    2010-01-01

    MgB2 superconducting samples added with nano-Ho2O3 (n-Ho2O3) and/or nano-SiC (n-SiC) have been prepared by an in situ solid state reaction method to investigate and compare the combined and individual effects of n-SiC and n-Ho2O3 on a crystal structure, critical temperature (TC), and critical current density (JC) of MgB2. All the doped samples exhibit significantly enhanced in-field JC and the codoped sample with 2.5 wt % n-Ho2O3 and 5 wt % n-SiC gives the best performance in in-field JC, and the enhancement is around 100 times and 2 times greater than the undoped and monodoped n-SiC samples, respectively, at 5 K and 8 T. For the n-SiC added sample, lattice distortions due to C substitution on the B site and the formation of reacted phase Mg2Si as flux pinners cause enhanced JC up to the maximum field studied (8 T). While in the n-Ho2O3 added sample, a reacted phase HoB4 having a strong magnetic moment forms, without any substitution at the Mg or B site, which acts as a flux pinner in order to enhance the in-field JC. Accordingly the best codoped sample exhibits these combined benefits of n-SiC and n-Ho2O3 in MgB2 superconductor.

  15. Sol-gel synthesis and luminescence of unexpected microrod crystalline Ca 5La 5(SiO 4) 3(PO 4) 3O 2:Dy 3+ phosphors employing different silicate sources

    NASA Astrophysics Data System (ADS)

    Yan, Bing; Huang, Honghua

    2007-08-01

    Ca5La5(SiO4)3(PO4)3O2 doped with Dy3+ were synthesized by sol-gel technology with hybrid precursor employed four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM diagraphs show that there exist some novel unexpected morphological structures of microrod owing to the crosslinking reagents than TEOS as silicate source for their amphipathy template effect. X-ray pictures confirm that Ca5La5(SiO4)3(PO4)3O2:Dy3+ compound is formed by a pure apatitic phase. The Dy3+ ions could emit white light in Ca5La5(SiO4)3(PO4)3O2 compound, and the ratio of Y/B is 1.1, when the Dy3+ doped concentration is 1.0 mol%.

  16. Astrometrically registered simultaneous observations of the 22 GHz H{sub 2}O and 43 GHz SiO masers toward R Leonis Minoris using KVN and source/frequency phase referencing

    SciTech Connect

    Dodson, Richard; Rioja, María J.; Jung, Tae-Hyun; Sohn, Bong-Won; Byun, Do-Young; Cho, Se-Hyung; Lee, Sang-Sung; Kim, Jongsoo; Kim, Kee-Tae; Oh, Chung-Sik; Han, Seog-Tae; Je, Do-Heung; Chung, Moon-Hee; Wi, Seog-Oh; Kang, Jiman; Lee, Jung-Won; Chung, Hyunsoo; Kim, Hyo-Ryoung; Kim, Hyun-Goo; Lee, Chang-Hoon; and others

    2014-11-01

    Oxygen-rich asymptotic giant branch (AGB) stars can be intense emitters of SiO (v = 1 and 2, J = 1 → 0) and H{sub 2}O maser lines at 43 and 22 GHz, respectively. Very long baseline interferometry (VLBI) observations of the maser emission provide a unique tool to probe the innermost layers of the circumstellar envelopes in AGB stars. Nevertheless, the difficulties in achieving astrometrically aligned H{sub 2}O and v = 1 and v = 2 SiO maser maps have traditionally limited the physical constraints that can be placed on the SiO maser pumping mechanism. We present phase-referenced simultaneous spectral-line VLBI images for the SiO v = 1 and v = 2, J = 1 → 0, and H{sub 2}O maser emission around the AGB star R LMi, obtained from the Korean VLBI Network (KVN). The simultaneous multi-channel receivers of the KVN offer great possibilities for astrometry in the frequency domain. With this facility, we have produced images with bona fide absolute astrometric registration between high-frequency maser transitions of different species to provide the positions of the H{sub 2}O maser emission and the center of the SiO maser emission, hence reducing the uncertainty in the proper motions for R LMi by an order of magnitude over that from Hipparcos. This is the first successful demonstration of source frequency phase referencing for millimeter VLBI spectral-line observations and also where the ratio between the frequencies is not an integer.

  17. Diffuse and point sources of silica in the Seine River watershed.

    PubMed

    Sferratore, Agata; Garnier, Josette; Billen, Gilles; Conley, Daniel I; Pinault, Séverine

    2006-11-01

    Dissolved silica (DSi) is believed to enter aquatic ecosystems primarily through diffuse sources by weathering. Point sources have generally been considered negligible, although recent reports of DSi inputs from domestic and industrial sources suggest otherwise. In addition, particulate amorphous silica (ASi) inputs from terrestrial ecosystems during soil erosion and in vegetation can dissolve and also be a significant source of DSi. We quantify here both point and diffuse sources of DSi and particulate ASi to the Seine River watershed. The total per capita point source inputs of Si (DSi + ASi) were found to be 1.0 and 0.8 g Si inhabitant(-1) d(-1) in raw and treated waters of the Achères wastewater treatment plant, in agreement with calculations based on average food intake and silica-containing washing products consumption. A mass balance of Si inputs and outputs for the Seine drainage network was established for wet and dry hydrological conditions (2001 and 2003, respectively). Diffuse sources of Si are of 1775 kg Si km(-2) y(-1) in wet conditions and 762 kg Si km(-2) y(-1) in dry conditions, with the proportion of ASi around 6%. Point sources of Si from urban discharge can contribute to more than 8% of the total Si inputs at the basin scale in hydrologically dry years. An in-stream retention of 6% of total inputs in dry conditions and 12% in wet conditions is inferred from the budget.

  18. SiS nanosheets as a promising anode material for Li-ion batteries: a computational study.

    PubMed

    Kong, Qingquan; Feng, Wei; Wang, Qingyuan; Gan, Li-Yong; Sun, Chenghua

    2017-03-22

    Recently, a two-dimensional Pma2-SiS monolayer has been predicted to show promising electronic properties [Nano Lett., 2015, 16, 1110]. However, it is suggested that Pma2-SiS is not suitable as an anode for Li-ion batteries [J. Power Sources, 2016, 331, 391]. By employing density functional theory calculations, we find that an ultrahigh theoretical specific capacity of 893.4 mA h g(-1) can be achieved in Pma2-SiS due to the strong bonding between Li and the S atoms released from Si-S bond breakage. Additionally, the low barrier of Li-diffusion (0.08 eV) along the Si-Si bond direction and the moderate average voltage (1.12 V) of the Li intercalation suggest that Pma2-SiS is promising as an anode material for Li-ion battery applications.

  19. Absorption in a-Si/SiO2 Superlattices

    NASA Astrophysics Data System (ADS)

    Kilpelä, O.; Karppinen, M.; Novikov, S.; Sokolov, V.; Yliniemi, S.

    a-Si/SiO2 superlattices were grown on quartz by MBD (Molecular Beam Deposition) using in situ oxidation by an RF-plasma source. The a-Si layer thicknesses were varied from 0.5-2.5nm while the SiO2 layer thicknesses (1.0nm) were kept constant. Optical transmission and reflection measurements were performed on these samples at room temperature. The recorded spectra were then analyzed with a commercial optical thin film analysis program. The band gaps were derived from constant-n and non-constant-n forms of Tauc and Cody laws. The observed blueshift of the band gap, with decreasing a-Si layer thickness, is attributed to quantum confinement in the a-Si sublayers.

  20. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

    2014-04-01

    Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h-1. The powders are fundamentally an aggregate of primary ˜20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g-1 after 100 cycles at the same time.

  1. Food additives

    PubMed Central

    Spencer, Michael

    1974-01-01

    Food additives are discussed from the food technology point of view. The reasons for their use are summarized: (1) to protect food from chemical and microbiological attack; (2) to even out seasonal supplies; (3) to improve their eating quality; (4) to improve their nutritional value. The various types of food additives are considered, e.g. colours, flavours, emulsifiers, bread and flour additives, preservatives, and nutritional additives. The paper concludes with consideration of those circumstances in which the use of additives is (a) justified and (b) unjustified. PMID:4467857

  2. Endotaxial Si nanolines in Si(001):H

    NASA Astrophysics Data System (ADS)

    Owen, James; Bianco, François; Köster, Sigrun A.; Mazur, Daniel; Renner, Christoph; Bowler, David

    2011-03-01

    The study of one dimensional wires is of great interest in the area of low-dimensional physics, and these structures also have potential applications in future nanodevices. A perfectly straight nanoline embedded in a H-terminated silicon surface has been fabricated by a process of hydrogenation of a Bi nanoline surface using an atomic H beam source, and comprises a triangular core of Si embedded in the top five layers of the Si substrate. The defect density of this nanoline is extremely low, and being H- terminated, it is stable in air for limited periods of time. Scanning Tunnelling Microscopy experimental data and Density Functional Theory calculations have been used to determine the atomic structure of this nanoline, so-called the Haiku Stripe, and have revealed that there exists a 1D state localised to the nanoline core, lying just above the conduction band minimum. This work is supported by the Swiss National Science Fundation.

  3. Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping

    NASA Astrophysics Data System (ADS)

    Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried

    2015-09-01

    Incorporation of source-drain stressors (S/D) for FinFETs to boost the channel mobility is a promising scaling approach. Typically SiGe:B S/D stressors are used for p FinFETs and Si:C:P S/D stressors for n FinFETs. The deposition of such Si:C:P S/D stressors requires a low thermal budget to freeze the C in substitutional sites and also to avoid problems associated with surface reflow of Si fins. In this work, we report the material properties of Si:C and Si:C:P epitaxial layers grown by chemical vapor deposition, in terms of their defectivity and C incorporation as a function of different process conditions. The undoped Si:C layers were found to be defect free for total C contents below 1%. Above this concentration defects were incorporated and the defect density increased with increasing C content. Abrupt epitaxial breakdown occurred beyond a total C content of 2.3% resulting in amorphous layers. P doping of Si:C layers brought down the resistivity and also thicker Si:C:P films underwent epitaxial breakdown. Additionally, the use of nitrogen instead of hydrogen as carrier gas resulted in an increase of the growth rate and substitutional C incorporation both by a factor of two, while the surface defect density reduced.

  4. Breeding Pierce’s disease resistant table and raisin grapes and the development of markers for additional sources of resistance 2008

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Twenty-two seedless x seedless crosses to develop additional BC2 and BC3 V. arizonica and BC1 SEUS BD5-117 families were made in 2008. Powdery mildew resistance was included in five of these crosses. These crosses produced 5,148 berries, 8,824 ovules and 1,861 embryos. Nine seeded BC1 crosses bas...

  5. Reduction of hysteresis losses in the magnetic refrigerant La0.8Ce0.2Fe11.4Si1.6 by the addition of boron

    NASA Astrophysics Data System (ADS)

    Shamba, P.; Debnath, J. C.; Zeng, R.; Wang, J. L.; Campbell, S. J.; Kennedy, S. J.; Dou, S. X.

    2011-04-01

    In an effort to improve the magnetocaloric effects of the NaZn13-type La0.8Ce0.2Fe11.4Si1.6 compound, the effect of boron doping on the magnetic properties and magnetocaloric properties has been investigated. The magnetic entropy change (ΔSM) for the La0.8Ce0.2Fe11.4Si1.6 compound, obtained for a field change of 0-5 T using the Maxwell relation exhibits a spike and appears to be overestimated and is thus corrected by using the Clausius-Clapeyron equation (CC). The ΔSM determined from the CC equation is estimated to be 19.6 J kg-1K-1. However, large hysteretic losses which are detrimental to the magnetic refrigeration efficiency occur in the same temperature range. In this work, we report a significant reduction in hysteretic losses by doping the La0.8Ce0.2Fe11.4Si1.6 compound with a small amount of boron to obtain La0.8Ce0.2Fe11.4Si1.6Bx compounds. The hysteresis loss decreases from 131.5 to 8.1 J kg -1 when x increases from 0 to 0.3, while ΔSM, obtained for a field change of 0-5 T, varies from 19.6 to 15.9 J kg-1K-1. This also simultaneously shifts the TC from 174 to 184 K and significantly improves the effective refrigerant capacity (RCeff) of the material from 164 to 305 J kg-1.

  6. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N-H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  7. Effect of ZrO(2) additions on the crystallization, mechanical and biological properties of MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics.

    PubMed

    Li, H C; Wang, D G; Meng, X G; Chen, C Z

    2014-06-01

    A series of ZrO(2) doped MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics were obtained by sintering method. The crystallization behavior, phase composition, morphology and structure of glass-ceramics were characterized. The bending strength, elastic modulus, fracture toughness, micro-hardness and thermal expansion coefficient (TEC) of glass-ceramics were investigated. The in vitro bioactivity and cytotoxicity tests were used to evaluate the bioactivity and biocompatibility of glass-ceramics. The sedimentation mechanism and growth process of apatites on sample surface were discussed. The results showed that the mainly crystalline phases of glass-ceramics were Ca(5)(PO4)3F (fluorapatite) and β-CaSiO(3). (β-wollastonite). m-ZrO(2) (monoclinic zirconia) declined the crystallization temperatures of glasses. t-ZrO(2) (tetragonal zirconia) increased the crystallization temperature of Ca(5)(PO4)(3)F and declined the crystallization temperature of β-CaSiO(3). t-ZrO(2) greatly increased the fracture toughness, bending strength and micro-hardness of glass-ceramics. The nanometer apatites were induced on the surface of glass-ceramic after soaking 28 days in SBF (simulated body fluid), indicating the glass-ceramic has good bioactivity. The in vitro cytotoxicity test demonstrated the glass-ceramic has no toxicity to cell.

  8. SI: The Stellar Imager

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  9. Substrate-Free Self-Assembled SiOx-Core Nanodots from Alkylalkoxysilane as a Multicolor Photoluminescence Source for Intravital Imaging

    PubMed Central

    Lin, Pei-Ying; Hsieh, Chiung-Wen; Kung, Mei-Lang; Hsieh, Shuchen

    2013-01-01

    Intravital fluorescence imaging has great potential in biological and biomedical research, as it provides the ability to directly observe biological structures and processes in their natural state. Contrast agents for intravital imaging applications should exhibit good biocompatibility, multiphoton fluorescence, and long emission. Carbon nanodots and semiconductor nanocrystals meet these requirements in most cases, with the added benefit that their properties can be ‘tuned' for specific applications by controlling the size and surface chemistry of the nanoparticles. Here, we report on a simple heat-assisted strategy to fabricate SiOx-core self-assembled nanodots using self-assembled monolayer (SAM) materials. Our results demonstrate that substrate-free self-assembled nanodots from alkylalkoxysilane exhibit controllable structural and chemical characteristics that are well suited for applications in biological, biomedical, and clinical research, and may find further use in optoelectronic and sensor devices. PMID:23609156

  10. Switchable resonant hyperpolarization transfer to 29Si spins in natural silicon

    NASA Astrophysics Data System (ADS)

    Dluhy, Phillip; Salvail, Jeff Z.; Saeedi, Kamyar; Thewalt, Mike L. W.; Simmons, Stephanie

    2015-05-01

    Silicon nano- and microparticles containing polarized 29Si spins are promising inexpensive and biocompatible medical imaging agents, particularly for magnetic resonance imaging (MRI). Maximizing out-of-equilibrium polarization (i.e., hyperpolarization) of the 29Si nuclear spins as efficiently as possible is critical for such an application. Here we identify and exploit a frequency-matched resonant transfer process between easily hyperpolarized bulk 31P and otherwise insensitive 29Si nuclear spins in natural silicon, boosting the 29Si signal to over 200 times its thermal equilibrium signal. This technique could be used in tandem with microwave-based hyperpolarization schemes for even higher efficiencies. Lastly, this hyperpolarization buildup process does not necessarily introduce an additional source of decoherence; after hyperpolarization the resonant transfer process can be switched off to recover the ultralong lifetimes of 29Si spins for in vivo imaging.

  11. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, R.; Li, H.; Zhang, Z. D.; Wang, Z. S.; Zhou, S. Y.; Wang, Z.; Li, T. C.; Liu, J. R.; Fu, D. J.

    2015-08-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.

  12. Food additives

    MedlinePlus

    ... or natural. Natural food additives include: Herbs or spices to add flavor to foods Vinegar for pickling ... Certain colors improve the appearance of foods. Many spices, as well as natural and man-made flavors, ...

  13. Potential N2O Emissions from the Tanks of Bromeliads Suggest an Additional Source of N2O in the Neotropics.

    PubMed

    Suleiman, Marcel; Brandt, Franziska B; Brenzinger, Kristof; Martinson, Guntars O; Braker, Gesche

    2016-12-06

    We studied the propensity of the tank bromeliad Werauhia gladioliflora to emit the greenhouse gas nitrous oxide (N2O) at current and at increased N deposition levels in the range of predicted future scenarios. Potential production rates and net accumulation of N2O from tank substrate corresponded to N availability. N2O was produced in excess at all N levels due to a low level of N2O reductase activity which agreed well with a low abundance of N2O reducers compared to nitrite reducers. Transcriptional activation, however, indicated that expression of denitrification genes may be enhanced with increasing N supply eventually leading to more efficient N2O turnover with potential for adaptation of denitrifier communities to higher N levels. Our findings indicate that tank bromeliads may constitute a novel source of N2O in Neotropical forest canopies but further studies are required to understand the size and significance of in situ N2O fluxes from tank bromeliads to the environment.

  14. Potential biofuel additive from renewable sources--Kinetic study of formation of butyl acetate by heterogeneously catalyzed transesterification of ethyl acetate with butanol.

    PubMed

    Ali, Sami H; Al-Rashed, Osama; Azeez, Fadhel A; Merchant, Sabiha Q

    2011-11-01

    Butyl acetate holds great potential as a sustainable biofuel additive. Heterogeneously catalyzed transesterification of biobutanol and bioethylacetate can produce butyl acetate. This route is eco-friendly and offers several advantages over the commonly used Fischer Esterification. The Amberlite IR 120- and Amberlyst 15-catalyzed transesterification is studied in a batch reactor over a range of catalyst loading (6-12 wt.%), alcohol to ester feed ratio (1:3 to 3:1), and temperature (303.15-333.15K). A butanol mole fraction of 0.2 in the feed is found to be optimum. Amberlite IR 120 promotes faster kinetics under these conditions. The transesterifications studied are slightly exothermic. The moles of solvent sorbed per gram of catalyst decreases (ethanol>butanol>ethyl acetate>butyl acetate) with decrease in solubility parameter. The dual site models, the Langmuir Hinshelwood and Popken models, are the most successful in correlating the kinetics over Amberlite IR 120 and Amberlyst 15, respectively.

  15. Kilogram-scale production of SnO(2) yolk-shell powders by a spray-drying process using dextrin as carbon source and drying additive.

    PubMed

    Choi, Seung Ho; Kang, Yun Chan

    2014-05-05

    A simple and general method for the large-scale production of yolk-shell powders with various compositions by a spray-drying process is reported. Metal salt/dextrin composite powders with a spherical and dense structure were obtained by spray drying and transformed into yolk-shell powders by simple combustion in air. Dextrin plays a key role in the preparation of precursor powders for fabricating yolk-shell powders by spray drying. Droplets containing metal salts and dextrin show good drying characteristics even in a severe environment of high humidity. Sucrose, glucose, and polyvinylpyrrolidone are widely used as carbon sources in the preparation of metal oxide/carbon composite powders; however, they are not appropriate for large-scale spray-drying processes because of their caramelization properties and adherence to the surface of the spray dryer. SnO2 yolk-shell powders were studied as the first target material in the spray-drying process. Combustion of tin oxalate/dextrin composite powders at 600 °C in air produced single-shelled SnO2 yolk-shell powders with the configuration SnO2 @void@SnO2 . The SnO2 yolk-shell powders prepared by the simple spray-drying process showed superior electrochemical properties, even at high current densities. The discharge capacities of the SnO2 yolk-shell powders at a current density of 2000 mA g(-1) were 645 and 570 mA h g(-1) for the second and 100th cycles, respectively; the corresponding capacity retention measured for the second cycle was 88 %.

  16. Diminution of 2,3,5-triphenyltetrazolium chloride toxicity on Listeria monocytogenes growth by iron source addition to the culture medium.

    PubMed

    Junillon, Thomas; Flandrois, Jean-Pierre

    2014-04-01

    Tetrazolium salts (TTZ) such as 2,3,5-triphenyltetrazolium chloride (TTC) are readily reduced by bacterial populations of various genus. The reduced form of these redox indicators is conspicuously colored allowing a quick and easy detection of growth. The studies are mainly confined to Gram negative bacteria because of an important toxic effect of tetrazolium salts on Gram positive bacteria. Indeed, we observed an important impact of different tetrazolium salts on Listeria monocytogenes growth, curiously limited to an increase in the duration of the lag phase. In this study, we demonstrate that increasing the iron concentration in a medium containing TTC leads to a significant decrease of the lag phase. L. monocytogenes growth was kinetically measured and growth parameters were estimated using the Baranyi model. While lag phase diminution was found to be iron concentration dependent, growth rate was not affected. Addition of iron enables growth of some strains totally inhibited by a 0.4 g/l of TTC and for the other a significant reduction of the latency is observed. The nature of the mechanism resulting in a decrease of the observed lag phase remains unclear. Then, the use of iron supplementation may be proposed to overcome the inhibitory effect of TTC on L. monocytogenes.

  17. Effect of the addition of zero valent iron (Fe(0)) on the batch biological sulphate reduction using grass cellulose as carbon source.

    PubMed

    Mulopo, Jean; Schaefer, L

    2013-12-01

    Mineral mining generates acidic, saline, metal-rich mine waters, often referred to as acid mine drainage (AMD). Treatment of AMD and recovering saleable products during the treatment process are a necessity since water is, especially in South Africa, a scarce commodity. The aim of the study presented here was to investigate the effect of zero valent iron (Fe(0)) on the biological removal of sulphate from AMD in batch reactors. The performance of the reactors was assessed by means of sulphate reduction, chemical oxygen demand (COD), volatile fatty acid (VFA) utilisation and volatile suspended solids (VSS) concentration. To this end, three batch reactors, A, B and C (volume 2.5 L), were operated similarly with the exception of the addition of grass cuttings and iron filings. Reactors A and B received twice as much grass (100 g) as C (50 g). Reactor A received no iron filings to act as a control, while reactors B and C received 50-g iron filings for the experimental duration. The results showed that Fe(0) appears to provide sustained sulphate removal when sufficient grass substrate is available. In reactors A and C, sulphate removal efficiency was higher when the COD concentration was lower due to utilisation. In reactor B, sulphate removal efficiency was accompanied by an accumulation of COD as hydrogen (H2) provided by the Fe(0) was utilised for sulphate reduction. Furthermore, these results showed the potential of Fe(0) to enhance the participation of microorganisms in sulphate reduction.

  18. NGSI student activities in open source information analysis in support of the training program of the U.S. DOE laboratories for the entry into force of the additional protocol

    SciTech Connect

    Sandoval, M Analisa; Uribe, Eva C; Sandoval, Marisa N; Boyer, Brian D; Stevens, Rebecca S

    2009-01-01

    In 2008 a joint team from Los Alamos National Laboratory (LANL) and Brookhaven National Laboratory (BNL) consisting of specialists in training of IAEA inspectors in the use of complementary access activities formulated a training program to prepare the U.S. Doe laboratories for the entry into force of the Additional Protocol. As a major part of the support of the activity, LANL summer interns provided open source information analysis to the LANL-BNL mock inspection team. They were a part of the Next Generation Safeguards Initiative's (NGSI) summer intern program aimed at producing the next generation of safeguards specialists. This paper describes how they used open source information to 'backstop' the LANL-BNL team's effort to construct meaningful Additional Protocol Complementary Access training scenarios for each of the three DOE laboratories, Lawrence Livermore National Laboratory, Idaho National Laboratory, and Oak Ridge National Laboratory.

  19. Discovery of a Plains Caldera Complex and Extinct Lava Lake in Arabia Terra, Mars: Implications for the Discovery of Additional Highland Volcanic Source Regions

    NASA Technical Reports Server (NTRS)

    Bleacher, Jacob; Michalski, Joseph

    2012-01-01

    Several irregularly shaped topographic depressions occur near the dichotomy boundary in northern Arabia Terra, Mars. The geomorphology of these features suggests that they formed by collapse, opposed to meteor impact. At least one depression (approx.55 by 85 km) displays geologic features indicating a complex, multi-stage collapse history. Features within and around the collapse structure indicate volcanic processes. The complex occurs within Hesperian ridged plains of likely volcanic origin and displays no crater rim or evidence for ejecta. Instead the depression consists of a series of circumferential graben and down-dropped blocks which also display upper surfaces similar to ridged plain lavas. Large blocks within the depression are tilted towards the crater center, and display graben that appear to have originally been linked with circumferential graben outside of the complex related to earlier collapse events. A nearly 700 m high mound exists along a graben within the complex that might be a vent. The deepest depression displays two sets of nearly continuous terraces, which we interpret as high-stands of a drained lava lake. These features appear similar to the black ledge described during the Kilauea Iki eruption in 1959. A lacustrine origin for the terraces seems unlikely because of the paucity of channels found in or around the depression that could be linked to aqueous surface processes. In addition, there is no obvious evidence for lacustrine sediments within the basin. Together with the presence of significant faulting that is indicative of collapse we conclude that this crater complex represents a large caldera formed in the Late Noachian to Early Hesperian. Other linear and irregular depressions in the region also might be linked to ancient volcanism. If that hypothesis is correct, it suggests that northern Arabia Terra could contain a large, previously unrecognized highland igneous province. Evacuation of magma via explosive and effusive activity

  20. Potlining Additives

    SciTech Connect

    Rudolf Keller

    2004-08-10

    In this project, a concept to improve the performance of aluminum production cells by introducing potlining additives was examined and tested. Boron oxide was added to cathode blocks, and titanium was dissolved in the metal pool; this resulted in the formation of titanium diboride and caused the molten aluminum to wet the carbonaceous cathode surface. Such wetting reportedly leads to operational improvements and extended cell life. In addition, boron oxide suppresses cyanide formation. This final report presents and discusses the results of this project. Substantial economic benefits for the practical implementation of the technology are projected, especially for modern cells with graphitized blocks. For example, with an energy savings of about 5% and an increase in pot life from 1500 to 2500 days, a cost savings of $ 0.023 per pound of aluminum produced is projected for a 200 kA pot.

  1. Phosphazene additives

    DOEpatents

    Harrup, Mason K; Rollins, Harry W

    2013-11-26

    An additive comprising a phosphazene compound that has at least two reactive functional groups and at least one capping functional group bonded to phosphorus atoms of the phosphazene compound. One of the at least two reactive functional groups is configured to react with cellulose and the other of the at least two reactive functional groups is configured to react with a resin, such as an amine resin of a polycarboxylic acid resin. The at least one capping functional group is selected from the group consisting of a short chain ether group, an alkoxy group, or an aryloxy group. Also disclosed are an additive-resin admixture, a method of treating a wood product, and a wood product.

  2. Inherent paramagnetic defects in layered Si/SiO{sub 2} superstructures with Si nanocrystals

    SciTech Connect

    Jivanescu, M.; Stesmans, A.; Zacharias, M.

    2008-11-15

    An extensive electron spin resonance (ESR) analysis has been carried out on structures comprised of Si nanoparticles ({approx}2 nm across) embedded in a regular pattern in an amorphous SiO{sub 2} matrix, fabricated by the SiO/SiO{sub 2} superlattice approach, with the intent to reveal and quantify occurring paramagnetic defects. The as-grown state is found to exhibit only a Si dangling bond (DB) signal, which through combination of first and second harmonic X-, K-, and Q-band observations in combination with computer spectra simulation, could be conclusively disentangled as solely comprised of overlapping powder pattern spectra of P{sub b(0)} and P{sub b1} defects, the archetypal intrinsic defects of the Si/SiO{sub 2} interface, with no evidence for a D line (Si DBs in disordered Si). This indicates a full crystalline system of randomly oriented Si nanocrystals (NCs). The P{sub b(0)}/P{sub b1} defect system, pertaining to the NC-Si/SiO{sub 2} interfaces, is found to be both qualitatively and quantitatively much alike that of standard (high-quality) thermal Si/SiO{sub 2}. The system is inherent, remaining unaffected by subsequent UV/vacuum UV irradiations. Relying on the known properties of P{sub b}-type defects in standard microscopic Si/SiO{sub 2}, the data would comply with Si nanocrystallites, in average, predominantly bordered by (111) and (100) facets, perhaps with morphology, schematically, of [100] truncated (111) octahedrons. Based on independent NC particles counting, there appears a P{sub b}-type center at {approx}71% of the Si NCs indicating the latter to be comprised of two subsystems-with or without an incorporated strain relaxing interface defect-which in that case will exhibit drastically different defect-sensitive properties, such as, e.g., photoluminescence (PL). Upon additional optical irradiation, two more defects appear, i.e., the SiO{sub 2}-associated E{sub {gamma}}{sup '} and EX centers, where the observed density of the former, taken as

  3. Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals

    NASA Astrophysics Data System (ADS)

    Hiller, D.; Zelenina, A.; Gutsch, S.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Estradé, S.; Peiró, F.; Garrido, B.; Valenta, J.; Kořínek, M.; Trojánek, F.; Malý, P.; Schnabel, M.; Weiss, C.; Janz, S.; Zacharias, M.

    2014-05-01

    Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 105 times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si3N4-embedded Si NCs are suggested.

  4. Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor liquid solid growth in anodic aluminum oxide nanopore arrays

    NASA Astrophysics Data System (ADS)

    Shimizu, T.; Senz, S.; Shingubara, S.; Gösele, U.

    2007-06-01

    The synthesis of epitaxial Si nanowires with growth direction parallel to Si [100] on Si(100) substrate was demonstrated using a combination of anodic aluminum oxide (AAO) template, catalytic gold film sandwiched between the template and the Si(100) substrate and vapor-liquid-solid growth using SiH4 as the Si source. After growing out from the AAO nanopores, most Si nanowires changed their diameter and growth direction into larger diameter and <111> direction.

  5. Using JVLA Observations of SiO Masers to Probe the Extended Atmosphere of an AGB Star: W Hydrae

    NASA Astrophysics Data System (ADS)

    Kamieneski, Patrick S.; Matthews, Lynn D.

    2015-01-01

    The Asymptotic Giant Branch star W Hydrae (W Hya) is known to be a strong source of silicon monoxide (SiO) masers in its extended atmosphere. Jansky Very Large Array imaging observations obtained in February 2014 were used to target eleven SiO J=1-0 rotational transitions near 43 GHz. The vibrational ground state (v=0) lines for the 28SiO, 29SiO, and 30SiO isotopologues were successfully detected, as were the v=1,2,3 lines for 28SiO. Non-detections included the v=1,2 transitions for 29SiO and 30SiO, and the v=4 line for 28SiO. We will summarize the relative shape, size, and intensity of the emission regions of the detected transitions. We have discovered spatially extended ground-state 28SiO emission in a region located approximately 300 to 600 milliarcseconds (projected distance of 34 to 69 AU) from the star. We will discuss a saddle-like distribution and a small gradient in the velocity field for the 28SiO v=1 line, which may help to confirm the existence of a bipolar outflow in W Hya. Additionally, our results indicate that the observed transitions have differing spatial distributions. Peak 28SiO v=1,2,3 emission primarily occupies a region 12 - 42 mas (projected distance of 1.4 - 4.8 AU) west of the star, while the 29SiO and 30SiO isotopologues are located in disparate regions around 45 - 70 mas (5.2 - 8.1 AU) to the northwest of the star.This work was sponsored by a grant from the National Science Foundation Research Experience for Undergraduate program to MIT Haystack Observatory.

  6. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  7. Tailoring of Boehmite-Derived Aluminosilicate Aerogel Structure and Properties: Influence of Ti Addition

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Guo, Haiquan; Sheets, Erik J.; Miller, Derek R.; Newlin, Katy N.

    2010-01-01

    Aluminosilicate aerogels offer potential for extremely low thermal conductivities at temperatures greater than 900 C, beyond where silica aerogels reach their upper temperature limits. Aerogels have been synthesized at various Al:Si ratios, including mullite compositions, using Boehmite (AlOOH) as the Al source, and tetraethoxy orthosilicate as the Si precursor. The Boehmite-derived aerogels are found to form by a self-assembly process of AlOOH crystallites, with Si-O groups on the surface of an alumina skeleton. Morphology, surface area and pore size varies with the crystallite size of the starting Boehmite powder, as well as with synthesis parameters. Ternary systems, including Al-Si-Ti aerogels incorporating a soluble Ti precursor, are possible with careful control of pH. The addition of Ti influences sol viscosity, gelation time pore structure and pore size distribution, as well as phase formation on heat treatment.

  8. Controlling deposition of nanoparticles by tuning surface charge of SiO2 by surface modifications† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6ra22412a Click here for additional data file.

    PubMed Central

    Eklöf, Johnas; Gschneidtner, Tina; Lara-Avila, Samuel; Nygård, Kim

    2016-01-01

    The self-assembly of nanoparticles on substrates is relevant for a variety of applications such as plasmonics, sensing devices and nanometer-sized electronics. We investigate the deposition of 60 nm spherical Au nanoparticles onto silicon dioxide (SiO2) substrates by changing the chemical treatment of the substrate and by that altering the surface charge. The deposition is characterized by scanning electron microscopy (SEM). Kelvin probe force microscopy (KPFM) was used to characterize the surface workfunction. The underlying physics involved in the deposition of nanoparticles was described by a model based on Derjaguin–Landau–Verwey–Overbeek (DLVO) theory combined with random sequential adsorption (RSA). The spatial statistical method Ripley's K-function was used to verify the DLVO–RSA model (ERSA). The statistical results also showed that the adhered particles exhibit a short-range order at distances below ~300 nm. This method can be used in future research to predict the deposition densities of charged nanoparticles onto charged surfaces. PMID:28066544

  9. SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

    NASA Astrophysics Data System (ADS)

    Haiping, Shang; Qiuxia, Xu

    2010-05-01

    By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

  10. Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

    NASA Astrophysics Data System (ADS)

    Miyao, Masanobu; Kanno, Hiroshi; Sadoh, Taizoh

    2008-02-01

    Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si 1-XGe X (0SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

  11. Carbon Diffusion through SiO2 from a Hydrogenated Amorphous Carbon Layer and Accumulation at the SiO2/Si Interface

    NASA Astrophysics Data System (ADS)

    Krafcsik, Olga H.; Vida, György; Pócsik, István; Josepovits, Katalin V.; Deák, Péter

    2001-04-01

    Carbon diffusion in a SiO2/Si system was investigated. The source was provided by chemical vapor deposition of a hydrogenated amorphous carbon layer onto the oxide at low temperature. From layers with low oxygen content, no carbon outdiffusion was detected up to 1190°C@. If the O content was high, the diffusion would start suddenly at 1140°C, and carbon accumulation would be found on the Si side of the SiO2/Si interface in the form of SiC precipitates. These results are interpreted by assuming oxygen-assisted dissociation of carbon atoms from the carbon layer in form of CO molecules, fast CO diffusion through SiO2 and an exothermic reaction of CO with Si. No carbon segregation was found in SiO2. Consequences of carbon island formation during SiC oxidation are pointed out.

  12. Synthesis of several millimeters long SiC-SiO2 nanowires by a catalyst-free technique

    NASA Astrophysics Data System (ADS)

    Dong, Shun; Li, Minglun; Hu, Ping; Cheng, Yuan; Sun, Boqian

    2016-11-01

    In situ synthesis of ultra-long SiC-SiO2 nanowires were successfully conducted with the raw materials of silicon and phenolic resin by an effective and catalyst-free technique. Several millimeters long SiC-SiO2 nanowires with the diameters in the range of 50-200 nm were mainly composed of Si, C and a small amount of O, and the formation of several millimeters long SiC-SiO2 nanowires was attributed to a low flow rate and carbon sources supplied continuously by the pyrolysis of phenolic resin. A catalyst-free vapor-solid (VS) growth mechanism was proposed to illustrate the growth process of ultra-long SiC-SiO2 nanowires in present experiment, which provides a promising method for in situ fabrication of SiC-SiO2 nanowires as reinforcements into composites.

  13. An electrostatic ion pump with nanostructured Si field emission electron source and Ti particle collectors for supporting an ultra-high vacuum in miniaturized atom interferometry systems

    NASA Astrophysics Data System (ADS)

    Basu, Anirban; Velásquez-García, Luis F.

    2016-12-01

    We report a field emission-based, magnetic-less ion pump architecture for helping maintain a high vacuum within a small chamber that is compatible with miniaturized cold-atom interferometry systems. A nanostructured silicon field emitter array, with each nano-sharp tip surrounded by a self-aligned proximal gate electrode, is used to generate a surplus of electrons that cause impact ionization of gas molecules. A two-stage cylindrical electron collector, made of titanium, is used to increase the travel distance of the electrons, augmenting the ionization probability; gas ionization is subsequently followed by gettering of the ions by a negatively charged, annular-shaped titanium electrode. A proof-of-concept pump prototype was characterized using a 25 cm3 stainless steel vacuum chamber backed up by an external turbomolecular pump, a diaphragm pump, and a standard ion pump. Pumping action was observed with the electrostatic pump operating alone after an initial rapid rise of the chamber pressure due to electron/ion scrubbing. In addition, running the electrostatic pump in combination with the standard ion pump results in a lower vacuum level compared to the vacuum level produced by the standard ion pump acting alone. A proposed reduced-order model accurately predicts the functional dependence of the pressure versus time data and provides a good estimate of the characteristic pumping time constant inferred from the experiments.

  14. Recycling of Al-Si die casting scraps for solar Si feedstock

    NASA Astrophysics Data System (ADS)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  15. {sup 13}C chemical shift anisotropies for carbonate ions in cement minerals and the use of {sup 13}C, {sup 27}Al and {sup 29}Si MAS NMR in studies of Portland cement including limestone additions

    SciTech Connect

    Sevelsted, Tine F.; Herfort, Duncan

    2013-10-15

    {sup 13}C isotropic chemical shifts and chemical shift anisotropy parameters have been determined for a number of inorganic carbonates relevant in cement chemistry from slow-speed {sup 13}C MAS or {sup 13}C({sup 1}H) CP/MAS NMR spectra (9.4 T or 14.1 T) for {sup 13}C in natural abundance. The variation in the {sup 13}C chemical shift parameters is relatively small, raising some doubts that different carbonate species in Portland cement-based materials may not be sufficiently resolved in {sup 13}C MAS NMR spectra. However, it is shown that by combining {sup 13}C MAS and {sup 13}C({sup 1}H) CP/MAS NMR carbonate anions in anhydrous and hydrated phases can be distinguished, thereby providing valuable information about the reactivity of limestone in cement blends. This is illustrated for three cement pastes prepared from an ordinary Portland cement, including 0, 16, and 25 wt.% limestone, and following the hydration for up to one year. For these blends {sup 29}Si MAS NMR reveals that the limestone filler accelerates the hydration for alite and also results in a smaller fraction of tetrahedrally coordinated Al incorporated in the C-S-H phase. The latter result is more clearly observed in {sup 27}Al MAS NMR spectra of the cement–limestone blends and suggests that dissolved aluminate species in the cement–limestone blends readily react with carbonate ions from the limestone filler, forming calcium monocarboaluminate hydrate. -- Highlights: •{sup 13}C chemical shift anisotropies for inorganic carbonates from {sup 13}C MAS NMR. •Narrow {sup 13}C NMR chemical shift range (163–171 ppm) for inorganic carbonates. •Anhydrous and hydrated carbonate species by {sup 13}C MAS and {sup 13}C({sup 1}H) CP/MAS NMR. •Limestone accelerates the hydration for alite in Portland – limestone cements. •Limestone reduces the amount of aluminium incorporated in the C-S-H phase.

  16. Growth of chemically deposited ZnO and ZnO-SiO2 on Pt buffered Si substrate

    NASA Astrophysics Data System (ADS)

    Peguit, A. D. M. V.; Candidato, R. T., Jr.; Bagsican, F. R. G.; Odarve, M. K. G.; Jabian, M. E.; Sambo, B. R. B.; Vequizo, R. M.; Alguno, A. C.

    2015-06-01

    Growing ZnO on Si via low-cost CBD is difficult owing to the large lattice mismatch between ZnO and Si and the intricate control of nanoparticle aggregation. In this work, a Pt buffer layer and addition of SiO2 on the chemical solution were introduced. The effect of these parameters on the resulting morphology and composition were investigated using SEM-EDX and FTIR. Pt-coated Si showed higher density of ZnO nanostructure growth than bare Si due to the additional nucleation sites provided by Pt. Moreover, SiO2 addition resulted to a different ZnO nanostructure.

  17. Liquid chromatography coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry and post-column addition of metal salt solutions as a powerful tool for the metabolic profiling of Fusarium oxysporum.

    PubMed

    Cirigliano, Adriana M; Rodriguez, M Alejandra; Gagliano, M Laura; Bertinetti, Brenda V; Godeas, Alicia M; Cabrera, Gabriela M

    2016-03-25

    Fusarium oxysporum L11 is a non-pathogenic soil-borne fungal strain that yielded an extract that showed antifungal activity against phytopathogens. In this study, reversed-phase high-performance liquid chromatography (RP-HPLC) coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry (API-QTOF-MS) was applied for the comprehensive profiling of the metabolites from the extract. The employed sources were electrospray (ESI), atmospheric pressure chemical ionization (APCI) and atmospheric pressure photoionization (APPI). Post-column addition of metal solutions of Ca, Cu and Zn(II) was also tested using ESI. A total of 137 compounds were identified or tentatively identified by matching their accurate mass signals, suggested molecular formulae and MS/MS analysis with previously reported data. Some compounds were isolated and identified by NMR. The extract was rich in cyclic peptides like cyclosporins, diketopiperazines and sansalvamides, most of which were new, and are reported here for the first time. The use of post-column addition of metals resulted in a useful strategy for the discrimination of compound classes since specific adducts were observed for the different compound families. This technique also allowed the screening for compounds with metal binding properties. Thus, the applied methodology is a useful choice for the metabolic profiling of extracts and also for the selection of metabolites with potential biological activities related to interactions with metal ions.

  18. Si/SiGe MMIC's

    NASA Astrophysics Data System (ADS)

    Luy, Johann-Friedrich; Strohm, Karl M.; Sasse, Hans-Eckard; Schueppen, Andreas; Buechler, Josef; Wollitzer, Michael; Gruhle, Andreas; Schaeffler, Friedrich; Guettich, Ulrich; Klaassen, Andreas

    1995-04-01

    Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(sub max) values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.

  19. Development of SiAlON materials

    NASA Technical Reports Server (NTRS)

    Layden, G. K.

    1979-01-01

    Cold pressing and sintering techniques were used to produce ceramic test specimens in which the major phase was either Si3N4 or a solid solution having the beta Si3N4 structure. Additional components were incorporated to promote liquid phase sintering. Glass and/or crystalline phase were consequently retained in boundaries between Si3N4 grains which largely determined the physical properties of the bodies. Systems investigated most extensively included R-Si-Al-O-N (R = rare earth element) Zr-Si-Al-O-N, Y-Si-Be-O-N, and R1-R2-Si-O-N. Room temperature and 1370 C modulus of ruptured, 1370 C creep, and oxidation behavior are discussed in terms of phase relationships in a parent quinery, and relavent oxide systems.

  20. Endotaxial Si nanolines in Si(001):H

    NASA Astrophysics Data System (ADS)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  1. Si-H bond activation at {(NHC)₂Ni⁰} leading to hydrido silyl and bis(silyl) complexes: a versatile tool for catalytic Si-H/D exchange, acceptorless dehydrogenative coupling of hydrosilanes, and hydrogenation of disilanes to hydrosilanes.

    PubMed

    Schmidt, David; Zell, Thomas; Schaub, Thomas; Radius, Udo

    2014-07-28

    The unique reactivity of the nickel(0) complex [Ni2(iPr2Im)4(COD)] (1) (iPr2Im = 1,3-di-isopropyl-imidazolin-2-ylidene) towards hydrosilanes in stoichiometric and catalytic reactions is reported. A series of nickel hydrido silyl complexes cis-[Ni(iPr2Im)2(H)(SiH(n-1)R(4-n))] (n = 1, 2) and nickel bis(silyl) complexes cis-[Ni(iPr2Im)2(SiH(n-1)R(4-n))2] (n = 1, 2, 3) were synthesized by stoichiometric reactions of 1 with hydrosilanes H(n)SiR(4-n), and fully characterized by X-ray diffraction and spectroscopic methods. These hydrido silyl complexes are examples where the full oxidative addition step is hindered. They have, as a result of the remaining Si-H interactions, remarkably short Si-H distances and feature a unique dynamic behavior in solution. Cis-[Ni(iPr2Im)2(H)(SiMePh2)] (cis-5) shows in solution at room temperature a dynamic site exchange of the NHC ligands, H-D exchange with C6D6 to give the deuteride complex cis-[Ni(iPr2Im)2(D)(SiMePh2)] (cis-5-D), and at elevated temperatures an irreversible isomerization to trans-[Ni(iPr2Im)2(D)(SiMePh2)] (trans-5-D). Reactions with sterically less demanding silanes give cis-configured bis(silyl) complexes accompanied by the release of dihydrogen. These complexes display, similarly to the hydrido silyl complexes, interestingly short Si-Si distances. Complex 1 reacts with 4 eq. HSi(OEt)3, in contrast to all the other silanes used in this study, to give the trans-configured bis(silyl) complex trans-[Ni(iPr2Im)2Ni(Si(OEt)3)2] (trans-12). The addition of two equivalents of Ph2SiH2 to 1 results, at elevated temperatures, in the formation of the dinuclear complex [{(iPr2Im)Ni-μ(2)-(HSiPh2)}2] (6). This diamagnetic, formal Ni(I) complex exhibits a long Ni-Ni bond in the solid state, as established by X-ray diffraction. The capability of the electron rich {Ni(iPr2Im)2} complex fragment to activate Si-H bonds was applied catalytically in the deuteration of Et3Si-H to Et3Si-D employing C6D6 as a convenient deuterium source

  2. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    NASA Astrophysics Data System (ADS)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  3. Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.

    PubMed

    Korchagina, T T; Gutakovsky, A K; Fedina, L I; Neklyudova, M A; Volodin, V A

    2012-11-01

    The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs. Regimes of crystallization of amorphous Si nanoclusters in the initial films were found. Ablation thresholds for SiO(x) films of various stoichiometries were discovered. The effect of laser assisted formation of a-Si nanoclusters in the non-stoichiometric dielectric films with relatively low concentration of additional Si atoms was also observed. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

  4. Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?

    NASA Astrophysics Data System (ADS)

    Anders, M. A.; Lenahan, P. M.; Lelis, A. J.

    2016-10-01

    Silicon carbide (SiC) based metal-oxide-semiconductor field-effect transistors (MOSFETs) have great promise in high power and high temperature applications. Unfortunately, effective channel mobilities remain disappointingly low, typically about 30 cm2/Vs. A major contributor to the disappointing effective channel mobilities is the presence of substantial densities of interface traps at the SiC/SiO2 interface. Many investigators have invoked silicon or carbon dangling bonds to be the dominating source of these interface defects, but very little, if any, direct experimental evidence exists to support this assumption in the SiC/SiO2 system. Cantin et al. [Phys. Rev. Lett. 92, 1 (2004)] have used conventional electron paramagnetic resonance measurements on porous oxidized SiC structures to measure the g tensor for the SiC/SiO2 interface carbon dangling bond. These results provide a particularly straightforward means to search for the presence of carbon dangling bonds in fully processed SiC MOSFETs using electrically detected magnetic resonance. Additionally, simple theory provides guidance to search for silicon dangling bond defects. In this study, we utilize K band electrically detected magnetic resonance via spin dependent charge pumping measurements in which almost all of the SiC band gap at the SiC/SiO2 interface is accessed. Although quite high signal to noise measurements are achieved, we are unable to detect any trace of the carbon dangling bond spectra. However, in very poor quality p-channel devices, we observe a spectrum which could be consistent with silicon dangling bonds. Other defect centers are clearly present and we conclude that these other centers dominate the interface trap density of states.

  5. Screening of additives in plastics with high resolution time-of-flight mass spectrometry and different ionization sources: direct probe injection (DIP)-APCI, LC-APCI, and LC-ion booster ESI.

    PubMed

    Ballesteros-Gómez, Ana; Jonkers, Tim; Covaci, Adrian; de Boer, Jacob

    2016-04-01

    Plastics are complex mixtures consisting of a polymer and additives with different physico-chemical properties. We developed a broad screening method to elucidate the nature of compounds present in plastics used in electrical/electronic equipment commonly found at homes (e.g., electrical adaptors, computer casings, heaters). The analysis was done by (a) solvent extraction followed by liquid chromatography coupled to high accuracy/resolution time-of-flight mass spectrometry (TOFMS) with different ionization sources or (b) direct analysis of the solid by ambient mass spectrometry high accuracy/resolution TOFMS. The different ionization methods showed different selectivity and sensitivity for the different compound classes and were complementary. A variety of antioxidants, phthalates, UV filters, and flame retardants were found in most samples. Furthermore, some recently reported impurities or degradation products derived from flame retardants were identified, such as hydroxylated triphenyl phosphate and tetrabromobisphenol A monoglycidyl ether.

  6. Microstructure and Hot Oxidation Resistance of SiMo Ductile Cast Irons Containing Si-Mo-Al

    NASA Astrophysics Data System (ADS)

    Ibrahim, Mervat M.; Nofal, Adel; Mourad, M. M.

    2017-04-01

    SiMo ductile cast irons are used as high-temperature materials in automotive components, because they are microstructurally stable at high operating temperatures. The effect of different amounts of Si and Mo as well as the addition of 3 wt pct Al on the microstructure, high-temperature oxidation, and mechanical properties of SiMo ductile cast iron was studied. Dilatometric measurements of SiMo ductile iron exhibited obvious differences in the transformation temperature A 1 due to presence of Al and the increase of Si. The microstructure of the SiMo alloys without Al addition showed outstanding nodularity and uniform nodule distribution. However, by adding 3 wt pct Al to low Si-SiMo ductile iron, some compacted graphite was observed. The results of oxidation experiments indicated that high Si-SiMo ductile iron containing 4 and 4.9 wt pct Si had superior resistance to lower Si-SiMo and SiMo ductile iron containing 3 wt pct Al. The results showed also that with increasing Si up to 4.9 wt pct or by replacing a part of Si with 3 wt pct Al, tensile strength increased while elongation and impact toughness decreased.

  7. Microstructure and Hot Oxidation Resistance of SiMo Ductile Cast Irons Containing Si-Mo-Al

    NASA Astrophysics Data System (ADS)

    Ibrahim, Mervat M.; Nofal, Adel; Mourad, M. M.

    2016-12-01

    SiMo ductile cast irons are used as high-temperature materials in automotive components, because they are microstructurally stable at high operating temperatures. The effect of different amounts of Si and Mo as well as the addition of 3 wt pct Al on the microstructure, high-temperature oxidation, and mechanical properties of SiMo ductile cast iron was studied. Dilatometric measurements of SiMo ductile iron exhibited obvious differences in the transformation temperature A 1 due to presence of Al and the increase of Si. The microstructure of the SiMo alloys without Al addition showed outstanding nodularity and uniform nodule distribution. However, by adding 3 wt pct Al to low Si-SiMo ductile iron, some compacted graphite was observed. The results of oxidation experiments indicated that high Si-SiMo ductile iron containing 4 and 4.9 wt pct Si had superior resistance to lower Si-SiMo and SiMo ductile iron containing 3 wt pct Al. The results showed also that with increasing Si up to 4.9 wt pct or by replacing a part of Si with 3 wt pct Al, tensile strength increased while elongation and impact toughness decreased.

  8. Interfacial SiO2 scavenging kinetics in HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Li, Xiuyan; Nishimura, Tomonori; Toriumi, Akira

    2016-11-01

    In this paper, Si and oxygen diffusions as well as SiO2 reduction reaction in HfO2/SiO2/Si stacks are examined in detail for fully understanding the SiO2-IL scavenging process. A 29Si isotope tracing experiment confirms that Si in SiO2-IL is mostly emitted from the HfO2 surface. In addition, the reaction of oxygen from SiO2 with VO in HfO2 is suggested. Furthermore, it is reported that the Si substrate is not changed at all in the SiO2-IL scavenging by simultaneously comparing a Si surface between with and without scavenged parts. Based on these results, a kinetic model for the SiO2-IL scavenging in HfO2/SiO2/Si stacks is proposed.

  9. Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

    2010-01-01

    Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

  10. Effect of protein source and protease addition on performance, blood metabolites and nutrient digestibility of turkeys fed on low-protein diets from 28 to 55 d post hatch.

    PubMed

    Shahir, M H; Rahimi, R; Taheri, H R; Heidariniya, A; Baradaran, N; Asadi Kermani, Z

    2016-06-01

    The objective of this study was to investigate the effect of a monocomponent protease and dietary inclusion of canola meal (CM) and poultry by-product meal (PBM) on growth performance, carcass characteristics and blood metabolites of turkeys fed on low crude protein (CP) diets from 28 to 55 d post hatch. Experimental treatments included control, maize-soybean meal diet including 258.3 g/kg CP; negative control 1 (NC1), maize-soybean meal diet with reduced CP (232.4 g/kg); NC2, control diet (CP, 258.3 g/kg) including CM (80 g/kg) and PBM (80 g/kg); NC3, maize-soybean meal diet with reduced CP (232.4 g/kg) including CM (80 g/kg) and PBM (80 g/kg). Also, the NC1 + P and NC3 + P diets were created by addition of protease enzyme (30 000 units/kg of diet) to the NC1 and NC3 diets, respectively. The NC3 group had lower body weight gain (BWG) compared to those fed on the control diet, and no improvement with enzyme addition (NC3 + P) was achieved. The protease addition to the NC1 diet (NC1 + P) improved BWG to the level of the control diet. The NC1 group had higher feed conversion ratio (FCR) compared to the control and NC3 + P, but protease addition to the NC1 diet improved FCR. Protease addition to the low CP diets resulted in higher nitrogen (N) retention than in the control and NC2 groups. Also, the NC1 + P and NC3 + P diets increased apparent ileal digestibility (AID) of CP compared to the control group. It was concluded that addition of CM (up to 80 g/kg) and PBM (up to 80 g/kg) to turkey diets had no negative effect on growth performance from 28 to 55 d of age. The NC1 + P group achieved the BWG of the control group which was partially due to increases in N retention and AID of CP, but the NC3 + P group failed to recover the growth losses. This difference implies that the efficacy of the protease may depend upon the protein source in the ration.

  11. The Basic SI Model

    ERIC Educational Resources Information Center

    Hurley, Maureen; Jacobs, Glen; Gilbert, Melinda

    2006-01-01

    A general overview of the SI model is provided, including the SI philosophy, essential components of the program, program structures, key roles, outcomes, and evaluation. A review of what we have learned about the importance of planning SI sessions, providing ongoing training for leaders, conducting regular SI program assessments, and implementing…

  12. High temperature compounds for turbine vanes. [of SiC, Si3N4, and Si composites

    NASA Technical Reports Server (NTRS)

    Rhodes, W. H.; Cannon, R. M., Jr.

    1974-01-01

    Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

  13. Visible light emission from MBD-grown {Si}/{SiO2} superlattices

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Sinkkonen, J.; Kilpelä, O.; Gastev, S. V.

    1997-05-01

    {Si}/{SiO2} superlattices were grown by MBD using in situ oxidation by RF-plasma source. Room temperature photoluminescence (PL) was observed in the spectral range 1.9-2.3 eV. PL spectra show blueshifts due to the quantum confinement of the energy states in ultrathin silicon layers.

  14. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  15. Binding waste anthracite fines with Si-containing materials as an alternative fuel for foundry cupola furnaces.

    PubMed

    Huang, He; Fox, John T; Cannon, Fred S; Komarneni, Sridhar; Kulik, Joseph; Furness, Jim

    2011-04-01

    An alternative fuel to replace foundry coke in cupolas was developed from waste anthracite fines. Waste anthracite fines were briquetted with Si-containing materials and treated in carbothermal (combination of heat and carbon) conditions that simulated the cupola preheat zone to form silicon carbide nanowires (SCNWs). SCNWs can provide hot crushing strengths, which are important in cupola operations. Lab-scale experiments confirmed that the redox level of the Si-source significantly affected the formation of SiC. With zerovalent silicon, SCNWs were formed within the anthracite pellets. Although amorphous Si (+4) plus anthracite formed SiC, these conditions did not transform the SiC into nanowires. Moreover, under the test conditions, SiC was not formed between crystallized Si (+4) and anthracite. In a full-scale demonstration, bricks made from anthracite fines and zerovalent silicon successfully replaced a part of the foundry coke in a full-scale cupola. In addition to saving in fuel cost, replacing coke by waste anthracite fines can reduce energy consumption and CO2 and other pollution associated with conventional coking.

  16. Ion Beam Synthesis Of Metal - Silicon Carbide - Si Multilayer Structures

    NASA Astrophysics Data System (ADS)

    Lindner, J. K. N.; Tsang, W. M.; Stritzker, B.; Wong, S. P.

    2003-08-01

    High doses of Ti, Ni, Mo, or W ions were implanted at elevated temperatures either conventionally or using a MEVVA ion source into ion beam synthesized Si/SiC/Si or SiC/Si layer structures in order to create metallic layers contacting the SiC. The depth distribution of metal atoms and the formation of silicide and carbide phases as well as the formation of cavities at the lower SiC/Si interface are studied by Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission electron microscopy (XTEM). A brief survey of the effects ocurring in the ion beam metallization of SiC films is given and the benefit of using ion beams for metallization of thin films is elucidated.

  17. Improved nucleic acid descriptors for siRNA efficacy prediction

    PubMed Central

    Sciabola, Simone; Cao, Qing; Orozco, Modesto; Faustino, Ignacio; Stanton, Robert V.

    2013-01-01

    Although considerable progress has been made recently in understanding how gene silencing is mediated by the RNAi pathway, the rational design of effective sequences is still a challenging task. In this article, we demonstrate that including three-dimensional descriptors improved the discrimination between active and inactive small interfering RNAs (siRNAs) in a statistical model. Five descriptor types were used: (i) nucleotide position along the siRNA sequence, (ii) nucleotide composition in terms of presence/absence of specific combinations of di- and trinucleotides, (iii) nucleotide interactions by means of a modified auto- and cross-covariance function, (iv) nucleotide thermodynamic stability derived by the nearest neighbor model representation and (v) nucleic acid structure flexibility. The duplex flexibility descriptors are derived from extended molecular dynamics simulations, which are able to describe the sequence-dependent elastic properties of RNA duplexes, even for non-standard oligonucleotides. The matrix of descriptors was analysed using three statistical packages in R (partial least squares, random forest, and support vector machine), and the most predictive model was implemented in a modeling tool we have made publicly available through SourceForge. Our implementation of new RNA descriptors coupled with appropriate statistical algorithms resulted in improved model performance for the selection of siRNA candidates when compared with publicly available siRNA prediction tools and previously published test sets. Additional validation studies based on in-house RNA interference projects confirmed the robustness of the scoring procedure in prospective studies. PMID:23241392

  18. SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION

    SciTech Connect

    Paul K.T. Liu

    2001-10-16

    This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction.

  19. Direct observation of nanometer-scale strain field around CoSi{sub 2}/Si interface using scanning moiré fringe imaging

    SciTech Connect

    Kim, Suhyun; Jung, Younheum; Jung Kim, Joong; Byun, Gwangseon; Lee, Sunyoung; Lee, Heabum

    2014-04-21

    We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi{sub 2} contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi{sub 2}/Si (111) interface was determined from the high-resolution (HR)-STEM images, and the strain field formed around the S/D region was revealed by nanometer-scale SMFs appearing in the STEM image. In addition, we showed that the strain field in the S/D region measured by SMF imaging agreed with results obtained via peak-pairs analysis of HR-STEM images.

  20. Mo-Si alloy development

    SciTech Connect

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  1. Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces

    NASA Astrophysics Data System (ADS)

    Anzai, Keisuke; Kunioshi, Nílson; Fuwa, Akio

    2017-01-01

    The dynamics of reactions of SiCl2 at Si(100) surfaces was investigated through the molecular orbital method at the B3LYP/6-31G(d,p) level of theory, with the surface being modeled using clusters of silicon atoms. The intradimer adsorption of a SiCl2 molecule proceeded with no energy barrier, and in the structure of the product of the adsorption reaction the Si atom of the SiCl2 adsorbate formed a triangular structure with the two Si atoms of the surface dimer, in agreement with theoretical predictions published recently in the literature for a small cluster. However, the dynamics reported in this work indicates that SiCl2 undergoes molecular adsorption at the silicon surface, in contrast with the dissociative adsorption suggested by some available kinetic models. Intradimer adsorption of a second SiCl2 molecule, and interdimer adsorptions of a first, a second, and a third SiCl2 molecule were also seen to proceed without significant energy barriers, suggesting that the formation of the first additional layer of silicon atoms on the surface would be fast if the adsorption of SiCl2 were the only type of reaction proceeding in the system. The diffusion of the SiCl2 adsorbate over the surface and its desorption from the surface were found to have comparable activation energies, so that these reactions are expected to compete at high temperatures.

  2. Metal Additive Manufacturing: A Review of Mechanical Properties

    NASA Astrophysics Data System (ADS)

    Lewandowski, John J.; Seifi, Mohsen

    2016-07-01

    This article reviews published data on the mechanical properties of additively manufactured metallic materials. The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, EBF3). Although only a limited number of metallic alloy systems are currently available for additive manufacturing (e.g., Ti-6Al-4V, TiAl, stainless steel, Inconel 625/718, and Al-Si-10Mg), the bulk of the published mechanical properties information has been generated on Ti-6Al-4V. However, summary tables for published mechanical properties and/or key figures are included for each of the alloys listed above, grouped by the additive technique used to generate the data. Published values for mechanical properties obtained from hardness, tension/compression, fracture toughness, fatigue crack growth, and high cycle fatigue are included for as-built, heat-treated, and/or HIP conditions, when available. The effects of test orientation/build direction on properties, when available, are also provided, along with discussion of the potential source(s) (e.g., texture, microstructure changes, defects) of anisotropy in properties. Recommendations for additional work are also provided.

  3. Improving Thermomechanical Properties of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Bhatt, Ramakrishna T.

    2006-01-01

    Today, a major thrust toward improving the thermomechanical properties of engine components lies in the development of fiber-reinforced silicon carbide matrix composite materials, including SiC-fiber/SiC-matrix composites. These materials are lighter in weight and capable of withstanding higher temperatures, relative to state-of-the-art metallic alloys and oxide-matrix composites for which maximum use temperatures are in the vicinity of 1,100 C. In addition, the toughness or damage tolerance of the SiC-matrix composites is significantly greater than that of unreinforced silicon-based monolithic ceramics. For successful application in advanced engine systems, the SiC-matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetimes. Inasmuch as the high-temperature structural lives of ceramic materials are typically limited by creep-induced growth of flaws, a key property required of such composite materials is high resistance to creep under conditions of use. Also, the thermal conductivity of the materials should be as high as possible so as to minimize component thermal gradients and thermal stresses. A state-of-the-art SiC-matrix composite is typically fabricated in a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by thermally stable high-performance fibers, (2) chemical-vapor infiltration (CVI) of a fiber-coating material such as boron nitride (BN) into the preform, and (3) infiltration of an SiC-based matrix into the remaining porosity in the preform. Generally, the matrices of the highest-performing composites are fabricated by initial use of a CVI SiC matrix component that is typically more thermally stable and denser than matrix components formed by processes other than CVI. As such, the initial SiC matrix component made by CVI provides better environmental protection to the coated fibers embedded within it. Also, the denser CVI SiC imparts to the

  4. Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

    NASA Astrophysics Data System (ADS)

    Kleykamp, H.

    2000-12-01

    SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

  5. Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer

    SciTech Connect

    Lim, K.Y.; Lee, K.J.; Park, C.I.; Kim, K.C.; Choi, S.C.; Lee, W.H.; Suh, E.K.; Yang, G.M.; Nahm, K.S.

    2000-07-01

    GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH{sub 4} gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH{sub 3}. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

  6. Effect of oxygen on ion-beam induced synthesis of SiC in silicon

    NASA Astrophysics Data System (ADS)

    Artamonov, V. V.; Valakh, M. Ya.; Klyui, N. I.; Melnik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yuhimchuk, V. A.

    1999-01-01

    The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.

  7. SiS in Circumstellar Shells

    NASA Astrophysics Data System (ADS)

    Sahai, R.; Wootten, A.; Clegg, R. E. S.

    1985-07-01

    The author has observed the spectrum of SiS toward the Mira variable IRC+10216, and made a detailed model incorporating a radial SiS abundance gradient due to photodissociation by interstellar UV (Sahai, Wootten, and Clegg 1984). The sensitive search for SiS J = 7-6 and J = 6-5 lines in other carbon-rich, oxygen-rich, and S-type envelopes has revealed three new sources, CIT 6, CRL 2688 and IRC+20370, all of which are carbon-rich.

  8. SiC device development for high temperature sensor applications

    NASA Technical Reports Server (NTRS)

    Shor, J. S.; Goldstein, David; Kurtz, A. D.; Osgood, R. M.

    1992-01-01

    Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

  9. Advanced Si IR detectors using molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Jones, E. W.; George, T.; Ksendzov, A.; Huberman, M. L.

    1991-01-01

    SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

  10. Tunable, broadband and high-efficiency Si/Ge hot luminescence with plasmonic nanocavity array

    NASA Astrophysics Data System (ADS)

    Qi, Gongmin; Zhang, Miao; Wang, Lin; Mu, Zhiqiang; Ren, Wei; Li, Wei; Di, Zengfeng; Wang, Xi

    2016-06-01

    In addition to the massive application in the electronics industry for decades, silicon has been considered as one of the best candidates for the photonics industry. However, a high-efficiency, broadband light source is still a challenge. In this paper, we theoretically propose a Si/Ge based platform consisting of plasmonic nanocavity array to realize the tunable, broadband, and high-efficiency Si/Ge hot luminescence from infrared to visible region with large luminescence enhancement (about 103). It is demonstrated that the large luminescence enhancement is due to the resonance between the intrinsic hot luminescence and the plasmonic nanocavity modes with ultra-small effective mode volumes. And, the size and Ge composition of Si 1 - x Ge x nanowire can be tuned to realize the tunable and broadband luminescence. This study gives rise to many applications in silicon photonics, like ultrafast optical communications, sensors, and on-chip spectral measurements.

  11. Theoretically predicted and experimentally determined effects of the Si/(Si + C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films

    NASA Astrophysics Data System (ADS)

    Kim, H. J.; Davis, R. F.

    1986-10-01

    The effects of the Si/(Si + C) ratio in the reaction gas stream on the growth and properties of monocrystalline beta-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of beta-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si + C) ratio in the source gases have been initially obtained from thermodynamic calculations using the 'SOLGASMIX-PV' computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si + C) = 0.5.

  12. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  13. Creep behavior of MoSi{sub 2}-SiC composites

    SciTech Connect

    Butt, D.P.; Maloy, S.A.; Kung, H.; Korzekwa, D.A.; Petrovic, J.J.

    1993-12-31

    Using a cylindrical indenter, indentation creep behavior of hot pressed and HIPed MoSi{sub 2}-SiC composites containing 0--40% SiC by volume, was characterized at 1000--1200C, 258--362 MPa. Addition of SiC affects the creep behavior of MoSi{sub 2} in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi{sub 2} grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.

  14. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    NASA Astrophysics Data System (ADS)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  15. Fabrication and characterization of SiC f/SiC composites produced by the slurry infiltration process

    NASA Astrophysics Data System (ADS)

    Lee, S. P.; Lee, M. H.; Lee, J. K.; Byun, J. H.; Kohyama, A.

    2011-10-01

    The mechanical properties of SiC f/SiC composites have been investigated, based on detailed analyses of their microstructure. SiC f/SiC composites were prepared from fiber preforms by a slurry infiltration technique, in which a mixture with SiC, Al 2O 3, and Y 2O 3 particles was impregnated into the fabric structure. SiC f/SiC composites were consolidated by liquid phase sintering process, associated with the creation of secondary phases by the addition of Al 2O 3 and Y 2O 3 particles. The reinforcing material was a plain weave Tyranno SA SiC fabric with a carbon interfacial layer. The sintered density and the pore volume fraction of SiC f/SiC composites were about 3.0 Mg/m 3 and about 10%, respectively. These SiC f/SiC composites had an average flexural strength of about 250 MPa at room temperature. They exhibited pseudo-ductile fracture behavior, due to the carbon interfacial layer. The introduction of the carbon interfacial layer greatly improved the fracture energy of SiC f/SiC composites.

  16. Laser-induced Mg production from magnesium oxide using Si-based agents and Si-based agents recycling

    NASA Astrophysics Data System (ADS)

    Liao, S. H.; Yabe, T.; Mohamed, M. S.; Baasandash, C.; Sato, Y.; Fukushima, C.; Ichikawa, M.; Nakatsuka, M.; Uchida, S.; Ohkubo, T.

    2011-01-01

    We succeeded in laser-induced magnesium (Mg) production from magnesium oxide (MgO) using Si-based agents, silicon (Si) and silicon monoxide (SiO). In these experiments, a cw CO2 laser irradiated a mixture of Mg and Si-based agents. Both experimental studies and theoretical analysis help not only understand the function of reducing agents but also optimize Mg extraction in laser-induced Mg production. The optimal energy efficiencies 12.1 mg/kJ and 4.5 mg/kJ of Mg production were achieved using Si and SiO, respectively. Besides, the possibility of recycling Si and SiO was preliminarily investigated without reducing agents but only with laser-irradiation. As for the Si-based agents recycling, we succeed in removing 36 mol % of oxygen fraction from SiO2 , obtaining 0.7 mg/kJ of Si production efficiency as well as 15.6 mg/kJ of SiO one at the same time. In addition, the laser irradiation to MgO-SiO mixture produced 24 mg/kJ of Si with more than 99% purity.

  17. Synthesis of α-Si3N4 crystallon by a solvothermal method at a low temperature of 180 °C

    NASA Astrophysics Data System (ADS)

    Wu, Zhao; Zhang, Zhiyong; Yun, Jiangni; Yan, Junfeng; You, Tiangui

    2013-11-01

    Alpha silicon nitride (α-Si3N4) crystallon has been synthesized by the solvothermal method with silica powder as the Si source, sodium azide (NaN3) as the N source, and thiosemicarbazide as the low-temperature additive at a low temperature of 180 ℃. The as-prepared sample has been characterized by x-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence spectrum (PL, type F-7000, Hitachi, Japan). The as-prepared α-Si3N4 micron-rod crystallon is single crystal with a smooth surface and a uniformed size, the maximum diameter being 2.0 μm. The main elements in the sample are Si and N with Si-N bonds and the ratio of Si and N are close to 3:4. The as-prepared α-Si3N4 micron-rod crystallon possesses good UV emission and its PL spectrum shows a strong ultraviolet emission at 380 nm.

  18. The Stellar Imager (SI) Project: A Deep Space UV/Optical Interferometer (UVOI) to Observe the Universe at 0.1 Milli-Arcsec Angular Resolution

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2008-01-01

    The Stellar Imager (SI) is a space-based, UV/ Optical Interferometer (UVOI) designed to enable 0.1 milliarcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding, of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this missin. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  19. Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2.

  20. Distribution and sources of PCBs (Aroclor 1268) in the Sapelo Island National estuarine research reserve.

    PubMed

    Wirth, E F; Pennington, P L; Cooksey, C; Schwacke, L; Balthis, L; Hyland, J; Fulton, M H

    2014-12-01

    Aroclor 1268 is a highly chlorinated PCB mixture that was released into the aquatic environment near Brunswick, GA (BR), as a result of decades of local industrial activity. This extensive contamination has led to US EPA Superfund designation in estuarine areas in and around Purvis Creek, GA. Roughly 50 km to the northeast is the Sapelo Island National Estuarine Research Reserve (SI) where previous studies have documented unexpectedly high Aroclor 1268-like PCB levels in blubber and plasma samples of resident bottlenose dolphins. This result led to a collaborative effort to assess the PCB patterns and concentrations in SI sediment and fish (as potential vectors for PCB transfer to SI resident dolphins). Thirty SI randomly assigned stations were sampled for sediment PCB levels. Additionally, fish were collected and analyzed from SI (n = 31) and BR (n = 33). Results were pooled with regional assessments of PCB concentrations from South Carolina and North Carolina in an effort to determine the association of Aroclor 1268 levels in SI samples. Results indicated that PCB levels in sediment and fish are much lower in the SI estuary compared to BR sediment and fish concentrations. However, PCB congener profiles for both sediments and fish were similar between the two locations and consistent with the Aroclor 1268 signature, indicating possible transport from the Brunswick area. A likely source of Aroclor 1268 in dolphins from SI is contaminated fish prey.

  1. Thermochemical analysis of chemical processes relevant to the stability and processing of SiC-reinforced Si3N4 composite

    NASA Technical Reports Server (NTRS)

    Misra, Ajay K.

    1991-01-01

    Chemical processes relevant to the stability and processing of SiC-reinforced Si3N4 composites have been examined from thermochemical considerations. The thermodynamic stabilities of various interfaces, such as SiC-Si3N4, SiC-Si3N4-Si2ON2, and SiC-Si3N4-SiO2, have been examined as a function of temperature, and the temperatures above which these interfaces become unstable have been calculated. The degradation of SiC during the processing of the composite has been examined. The processing routes considered in this study include the reaction bonded silicon nitride (RBSN) process and the pressure-assisted sintering processes with suitable sintering additives.

  2. Oxygen plasma-treatment effects on Si transfer.

    PubMed

    Langowski, Bryan A; Uhrich, Kathryn E

    2005-07-05

    Oxygen plasma-treatment is commonly used to increase the hydrophilicity of poly(dimethylsiloxane) (PDMS) stamps used for microcontact printing (muCP) aqueous-based inks. Review of the literature reveals that a wide range of plasma parameters are currently employed to modify stamp surfaces. However, little is known about the effect of these parameters (e.g., power, chamber pressure, duration) on the undesirable transfer of low-molecular-weight silicon-containing fragments from the stamps that commonly occurs during muCP. To study the effect of oxygen plasma-treatment on Si transfer, unpatterned PDMS stamps were treated with oxygen plasma under various conditions and used to stamp deionized water on plasma-activated poly(methyl methacrylate) (PMMA) substrates. Once stamped, the PMMA substrates were analyzed with X-ray photoelectron spectroscopy (XPS) to quantify and characterize silicon present on the substrate surface. In addition, used PDMS stamps were analyzed with scanning electron microscopy (SEM) to observe topographical changes that occur during oxygen plasma-treatment. XPS results show that all plasma treatments studied significantly reduced the amount of Si transfer from the treated stamps during muCP as compared to untreated PDMS stamps and that the source of transfer is residual PDMS fragments not removed by oxygen plasma. SEM results show that, although the treated stamps undergo a variety of topographical changes, no correlation exists between stamp topography and extent of Si transfer from the stamps.

  3. Efficient Si photovoltaic devices with integrated micro/nano holes

    NASA Astrophysics Data System (ADS)

    Cansizoglu, Hilal; Gao, Yang; Kaya, Ahmet; Ghandiparsi, Soroush; Polat, Kazim G.; Wang, Yichuan; Zhang, Runzhou; Reggad, Hind; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Islam, M. Saif

    2016-09-01

    Efficient light harvesting in a thin layer of crystalline Si can be realized by implementing nanoscale pillars and holes to the device structure. The major drawback of the pillars and holes based photovoltaic devices is high surface to volume ratio, contributing to an increase in surface recombination rate of the photo-generated carriers. The common techniques used in pillars/holes fabrication such as dry etching make the surface even worse by bombarding it with high energy ions. Therefore, such damaged surfaces of high aspect ratio structures need to be effectively passivated. In this study, we demonstrate a hole based thin crystalline Si photovoltaic device with enhanced open circuit voltage and short circuit current after a successful surface passivation process through a wet oxidation. In addition, the effect of passivation layer fabricated by rapid thermal oxide growth on photo response is investigated. A successful fabrication of thin crystalline Si solar cells can lead to the applications of ultra-thin, highly efficient, flexible and wearable energy sources.

  4. Aperiodic SiSn/Si multilayers for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Tonkikh, A. A.; Zakharov, N. D.; Eisenschmidt, C.; Leipner, H. S.; Werner, P.

    2014-04-01

    We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers.

  5. Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

    NASA Astrophysics Data System (ADS)

    Lele, Chen; Liang, Zhu; Linda, Xu; Dongxia, Li; Hui, Cai; Tod, Pao

    2009-03-01

    The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2 radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.

  6. Comparison of Si Refinement Efficiency of Electromagnetic Stirring and Ultrasonic Treatment for a Hypereutectic Al-Si Alloy

    NASA Astrophysics Data System (ADS)

    Haghayeghi, Reza; de Paula, Leandro Cassio; Zoqui, Eugenio Jose

    2017-03-01

    The effects of electromagnetic stirring, ultrasonic treatment (UT), and their combination on the Si particles refinement in a hypereutectic Al-Si alloy (A390) were examined. All three physical methods yielded a considerable change in the shape and size of the particles, with UT producing the finest size. The creation of holes inside the Si particles via the explosion of cavitation bubbles was determined to occur before fragmentation of primary Si. In addition, transmission electron microscopy analysis revealed twin formation on primary Si particles by application of an external field in the liquid. UT of the melt was sufficient to produce fine primary Si particles with average size of 12 µm. The primary Si particles refinement and eutectic Si modification improved the mechanical properties.

  7. Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Maserjian, J.

    1990-01-01

    The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

  8. Production of Si by vacuum carbothermal reduction of SiO2 using concentrated solar energy

    NASA Astrophysics Data System (ADS)

    Loutzenhiser, Peter G.; Tuerk, Ozan; Steinfeld, Aldo

    2010-09-01

    Using concentrated solar radiation as the energy source of high-temperature process heat, the carbothermal reduction of silica to silicon was examined thermodynamically and demonstrated experimentally at vacuum pressures. Reducing the system pressure favors Si(g) formation, enabling its vacuum distillation. Experimentation in a solar reactor was performed in the range 1,997-2,263 K at ˜3×10-3 bar with mixtures of charcoal and silica directly exposed to radiative flux intensities equivalent to 6,500 suns, yielding Si purities ranging from 66.1-79.2 wt.%. The Si purity increased with temperature. Solid characterizations showed SiC and SiO as important reaction intermediaries.

  9. Si Isotopes of Brownleeite

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  10. Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

    NASA Astrophysics Data System (ADS)

    Liang, J.; Nishida, S.; Arai, M.; Shigekawa, N.

    2016-07-01

    The effects of annealing process on the electrical properties of n+-Si/n-SiC and p+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring the current-voltage (I-V) characteristics of n+-Si/n-SiC junctions that the reverse-bias current and the ideality factor decreased to 2.0 × 10-5 mA/cm2 and 1.10, respectively, after the junctions annealing at 700 °C. The flat band voltages of n+-Si/n-SiC and p+-Si/n-SiC junctions obtained from capacitance-voltage (C-V) measurements decreased with increasing annealing temperature. Furthermore, their flat band voltages are very close to each other irrespective of the annealing temperature change, which suggests that the Fermi level is still pinned at the bonding interface even for the junctions annealing at high temperature and the interface state density causing Fermi level pinning varies with the junctions annealing. The reverse characteristics of n+-Si/n-SiC junctions are in good agreement with the calculations based on thermionic field emission. In addition, the calculated donor concentration of 4H-SiC epi-layers and flat band voltage is consistent with the values obtained from C-V measurements.

  11. Silica Sources and Water Flowpaths During Storm Events at Rio Icacos, Puerto Rico

    NASA Astrophysics Data System (ADS)

    Lugolobi, F.; Kurtz, A. C.; Salvucci, G. D.

    2006-12-01

    We employ germanium/silicon (Ge/Si) ratios as a novel tracer in hydrology, in conjunction with oxygen isotopes, hydrometric measurements, and physics-based models of water routing in the Rio Icacos watershed, Puerto Rico. Ge/Si ratios provide additional information on Si sources, an improvement over Si concentration- based models traditionally used to understand flowpaths. We hypothesize that at baseflow, streams deliver solutes derived from weathering at the saprolite-bedrock interface. During storm events, shallow subsurface stormflow is activated, delivering solutes derived from rapid reactions between rainwater and soil minerals. To test our hypothesis, we have installed nested tensiometers, crest piezometers, and lysimeters at four hillslope sites and two riparian sites in the Icacos watershed. Soil moisture retention curves are being measured on extracted cores to determine the water holding capacities of these soils. In addition, we will measure saturated hydraulic conductivity on these cores, and we will perform field infiltration experiments. We are measuring Ge/Si ratios on soilwaters, and streamwaters collected by automatic samplers during storm events. Combining geochemical studies with hydrometric studies will be useful in understanding the watershed's response to storm events. Ge/Si ratios in soilwater and streamwater reflect the reactions that deliver Si to solution. Streamwater Ge/Si ratios at baseflow (0.5μmol/mol) reflect weathering reactions (primarily plagioclase to kaolinite) near the saprolite-bedrock boundary. At peak discharge, streamwater Ge/Si ratios increase to values that are similar to those measured on porewaters from the upper 100cm (~2μmol/mol). At peak flow, the oxygen isotopic composition of stream water shifts away from baseflow values (from -0.7 to 3‰ in one typical event) suggesting a change in the source of water delivered to the stream. Both Ge/Si ratios and oxygen isotopes exhibit hysteresis with discharge indicating

  12. Wetting of polycrystalline SiC by molten Al and Al-Si alloys

    NASA Astrophysics Data System (ADS)

    Cong, Xiao-Shuang; Shen, Ping; Wang, Yi; Jiang, Qichuan

    2014-10-01

    The wetting of α-SiC by molten Al and Al-Si alloys was investigated using a dispensed sessile drop method in a high vacuum. In the Al-SiC system, representative wetting stages were identified. The liquid spreading was initially controlled by the deoxidation of the SiC surface and then by the formation of Al4C3 at the interface. The intrinsic contact angle for molten Al on the polycrystalline α-SiC surface was suggested to be lower than 90̊ provided that the oxide films covering the Al and SiC surfaces were removed, i.e., the system is partial wetting in nature. An increase in the Si concentration in liquid Al weakened the interfacial reaction but improved the final wettability. The role of the Si addition on the wetting was presumably attributed to its segregation at the interface and the formation of strong chemical bonds with the SiC surface.

  13. Syntheses and structural characterizations of CrSi2 nanostructures using Si substrates under CrCl2 vapor

    NASA Astrophysics Data System (ADS)

    Li, Wen; Meng, Erchao; Matsushita, Tomoji; Oda, Shingo; Ishikawa, Daisuke; Nakane, Kaito; Hu, Junhua; Guan, Shaokang; Ishida, Akihiro; Tatsuoka, Hirokazu

    2013-02-01

    Chromium disilicide (CrSi2) nanostructures were grown by the exposure of Si substrates to CrCl2 vapor at atmospheric pressure, and the growth condition dependence on the morphological and structural properties of CrSi2 was systemically investigated. The various structures of CrSi2, such as microrods, nanowire bundles along with microrods and dendritic nanowire structures, have been grown. It was found that the Si substrate temperature and the quantity of the CrCl2 source materials significantly affect the morphological and structural properties of the CrSi2 structures. The structural evolution of CrSi2 has been discussed on the basis of thermodynamic reactions, vapor deposition growth and dendritic growth phenomena. This growth process provides a simple and controllable method to grow novel nano-scaled structures of transition metal silicides for technological use.

  14. Recent Results From a Si/CdTe Semiconductor Compton Telescope

    SciTech Connect

    Tanaka, T.; Watanabe, S.; Takeda, S.; Oonuki, K.; Mitani, T.; Nakazawa, K.; Takashima, T.; Takahashi, T.; Tajima, H.; Sawamoto, N.; Fukazawa, Y.; Nomachi, M.; /JAXA, Sagamihara /Tokyo U. /SLAC /Hiroshima U. /Osaka U.

    2007-01-23

    We are developing a Compton telescope based on high resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma-rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9{sup o} (FWHM) at 511 keV, and the energy resolution is 14 keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating {sup 137}Cs source, we successfully obtained an image and a spectrum of 662 keV line emission with this method. As a next step, development of larger double-sided Si strip detectors with a size of 4 cm x 4 cm is underway to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well.

  15. Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

    SciTech Connect

    Hu, Xunxiang; Ang, Caen K.; Singh, Gyanender P.; Katoh, Yutai

    2016-08-01

    Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

  16. Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

    NASA Astrophysics Data System (ADS)

    Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

    2016-01-01

    Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite with a solution-based approach to immobilize a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. The reactants used were the salt solution, NaAlO2, and either Si(OC2H5)4 or Ge(OC2H5)4. Additionally, seven different glass sintering aids (at loadings of 5 mass%) were evaluated as sintering aids for consolidating the as-made powders using a cold-press-and-sinter technique. This process of using alkoxide additives for the Group IV component can be used to produce large quantities of sodalite at near-room temperature as compared to a method where colloidal silica was used as the silica source. However, the small particle sizes inhibited densification during heat treatments.

  17. Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

    SciTech Connect

    Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

    2016-01-01

    Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite to immobilize a mixed chloride salt using solution-based techniques. Sodalites were made using different Group IV contributions from either Si(OC2H5)4 or Ge(OC2H5)4, NaAlO2, and a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. Additionally, 6 glass binders at low loadings of 5 mass% were evaluated as sintering aids for the consolidation process. The approach of using the organic Group IV additives can be used to produce large quantities of sodalite at room temperature and shows promise over a method where colloidal silica is used as the silica source. However, the small particle sizes inhibited densification during pressure-less sintering.

  18. The thermal conductivity of silicon nitride with molybdenum disilicide additions

    SciTech Connect

    Beecher, S.C.; Dinwiddie, R.B.; Abeel, A.M.; Lowden, R.A.

    1993-12-31

    Room-temperature thermal conductivity has been measured for a series of silicon nitride (Si{sub 3}N{sub 4}) matrix composites with molybdenum disilicide (MoSi{sub 2}) additions of 2, 5 10, 25 and 50 wt. %. Included in these measurements were a pure MoSi{sub 2} sample and a Si{sub 3}N{sub 4} sample containing only sintering aids. Aluminum oxide (Al{sub 2}O{sub 3}) and yttrium oxide (Y{sub 2}O{sub 3}) were added as the sintering aids, at approximately 6 and 2 respectively. When the amount of MoSi{sub 2} was increased to greater than 10 wt. %, the amount of the sintering aids necessary to densify the composite was decreased. No sintering aids were added to the pure MoSi{sub 2} sample. Thermal conductivities of the Si{sub 3}N{sub 4} sample without MoSi{sub 2} and the pure MoSi{sub 2} sample wee 36 W/m.K and 52 W/m.K respectively, which agree very well with the literature values for similar materials. No statistically significant changes were observed in the thermal conductivity for those samples containing up to 10 wt. % MoSi{sub 2}. However, between 10 and 25 wt. % MoSi{sub 2} there was a dramatic decrease in the thermal conductivity from 37 to 20.9 W/m.K. The thermal conductivity then increased steadily with further additions of MoSi{sub 2} up to 52 W/m.K for the pure MoSi{sub 2} specimen.

  19. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  20. Synthesis of Si/SiO2 core-shell nanowire arrays and broadband anti-reflection effects in diluted Si nanowire arrays by adjusting dielectric shell thickness.

    PubMed

    Li, Xinhua; Chen, Tao; Zhou, BuKang; Liu, Guangqiang; Shi, Tongfei; Wen, Long; Cao, Huaxiang; Wang, Yuqi

    2017-05-05

    A low filling ratio and enhanced absorption is needed to enable the full potential of Si nanowire (NW) arrays for optoelectronic applications. In this paper, we report a versatile, scalable fabrication technique that uses nanosphere lithography (NSL) patterning for the synthesis of vertically aligned Si and Si/SiO2 NW arrays. The optical reflection of the NW arrays can be substantially suppressed by the addition of the transparent shell. Meanwhile, by the finite-difference time-domain (FDTD) simulation, we find that the absorption enhancement in the core Si NW can be obtained by adding the transparent shell. The special absorption enhancement of the Si NW arrays with a core-shell structure can be theoretically understood by modal analysis. The absorption in such Si NW array structures is very sensitive to the thickness of transparent coating. By the addition of a SiO2 shell layer, the absorption in the inner Si NW array can be substantially enhanced. Furthermore, significant absorption enhancement and broadband anti-reflection effects can be achieved by the diluted Si NWs combined with the single dielectric shell.

  1. Reaction mechanism for in-situ β-SiAlON formation in Fe3Si-Si3N4-Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Qin, Hai-xia; Li, Yong; Bai, Li-xiong; Long, Meng-long; Xue, Wen-dong; Chen, Jun-hong

    2017-03-01

    In this work, Fe3Si-Si3N4-Al2O3 composites were prepared at 1300°C in an N2 atmosphere using fused corundum and tabular alumina particles, Al2O3 fine powder, and ferrosilicon nitride (Fe3Si-Si3N4) as raw materials and thermosetting phenolic resin as a binder. The effect of ferrosilicon nitride with different concentrations (0wt%, 5wt%, 10wt%, 15wt%, 20wt%, and 25wt%) on the properties of Fe3Si-Si3N4-Al2O3 composites was investigated. The results show that the apparent porosity varies between 10.3% and 17.3%, the bulk density varies from 2.94 g/cm3 and 3.30 g/cm3, and the cold crushing strength ranges from 67 MPa to 93 MPa. Under the experimental conditions, ferrosilicon nitride, whose content decreases substantially, is unstable; part of the ferrosilicon nitride is converted into Fe2C, whereas the remainder is retained, eventually forming the ferrosilicon alloy. Thermodynamic assessment of the Si5AlON7 indicated that the ferrosilicon alloy accelerated the reactions between Si3N4 and α-Al2O3 fine powder and that Si in the ferrosilicon alloy was nitrided directly, forming β-SiAlON simultaneously. In addition, fused corundum did not react directly with Si3N4 because of its low reactivity.

  2. Effect of Si3N4 thickness on the optical characterization of grapheme.

    PubMed

    Shin, Dong-Wook; Lee, Jung Heon; Yoo, Ji-Beom

    2014-12-01

    Optical detection of graphene on a specific substrate is important for the analysis of the physical or chemical properties of graphene. Si3N4, an oxygen free substrate with high dielectric constant, is a good candidate to replace SiO2. In this letter, we report the optimization of the Si3N4 thickness for efficient optical characterization by means of the contrast, enhancement factor (F), and the Raman spectra of the graphene obtained on the selected Si3N4/Si substrate. The contrast (visibility) and enhancement factors (F, Raman intensity) of the graphene/Si3N4/Si structure were calculated as a function of the Si3N4 thickness and the wavelength of the excitation source. A suitable Si3N4 thickness generating high visibility and Raman intensities at the wavelength of the excitation source, 633 nm, was obtained.

  3. The Morphology and Chemistry Evolution of Inclusions in Fe-Si-Al-O Melts

    NASA Astrophysics Data System (ADS)

    Kwon, Youjong; Choi, Juhan; Sridhar, Seetharaman

    2011-08-01

    This study aims to elucidate the process of inclusion precipitation in Fe-Si and Fe-Si-Al melts. Deoxidation experiments were carried out in a vacuum induction furnace (VIF) at 1873 K (1600 °C). In the Si-deoxidation experiments, spherical SiO2 of 1~2 μm diameter was dominant. When 3 wt pct Si and 300 ppm Al were added, such that Al2O3 and mullite were thermodynamically stable, the resulting inclusions depended on the addition sequence. When aluminum was added before silicon, spherical aluminum oxides were dominant after the Al addition, but after the Si addition, the number and size of alumina decreased and Al-Si oxides and mullite appeared with increasing time. When silicon was added before aluminum, spherical SiO2 was dominant after the Si addition, but after the Al addition, spherical and polygonal alumina inclusions were dominant. When Al/Si was added simultaneously, polygonal alumina inclusions were dominant initially, but with time, Al-Si oxide and mullite inclusions increased in numbers. If the Al amount in the Al/Si addition was increased to 600 ppm, only alumina was found. This study shows how, under similar thermodynamic conditions, the transient evolution of inclusions in iron melts in the Si-Al-O system differ depending on the alloy addition sequence.

  4. δ30Si systematics in a granitic saprolite, Puerto Rico

    USGS Publications Warehouse

    Ziegler, Karen; Chadwick, Oliver A.; White, Arthur F.; Brzezinski, Mark A.

    2005-01-01

    Granite weathering and clay mineral formation impart distinct and interpretable stable Si isotope (δ30Si) signatures to their solid and aqueous products. Within a saprolite, clay minerals have δ30Si values ∼2.0‰ more negative than their parent mineral and the δ30Si signature of the bulk solid is determined by the ratio of primary to secondary minerals. Mineral-specific weathering reactions predominate at different depths, driving changes in differing δ30Sipore watervalues. At the bedrock-saprolite interface, dissolution of plagioclase and hornblende creates δ30Sipore water signatures more positive than granite by up to 1.2‰; these reactions are the main contributor of Si to stream water and determine its δ30Si value. Throughout the saprolite, biotite weathering releases Si to pore waters but kaolinite overgrowth formation modulates its contribution to pore-water Si. The influence of biotite on δ30Sipore water is greatest near the bedrock where biotite-derived Si mixes with bulk pore water prior to kaolinite formation. Higher in the saprolite, biotite grains have become more isolated by kaolinite overgrowth, which consumes biotite-derived Si that would otherwise influence δ30Sipore water. Because of this isolation, which shifts the dominant source of pore-water Si from biotite to quartz, δ30Sipore water values are more negative than granite by up to 1.3‰ near the top of the saprolite.

  5. Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes

    SciTech Connect

    Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

    2010-08-04

    Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

  6. A model for thermal oxidation of Si and SiC including material expansion

    SciTech Connect

    Christen, T. Ioannidis, A.; Winkelmann, C.

    2015-02-28

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  7. Growth Kinetics and Microstructure Evolution of Intermediate Phases in MoSi2-Si3N4-WSi2/Mo Diffusion Couples

    NASA Astrophysics Data System (ADS)

    Zhang, Houan; Huang, Yu; Lin, Jia; Chen, Ying; Gu, Siyong

    2016-12-01

    The growth kinetics and silicon diffusion coefficients of intermediate silicide phases in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo diffusion couple prepared by spark plasma sintering were investigated in temperatures ranging from 1200 to 1500 °C. The intermediate silicide phases were characterized by x-ray diffraction. The microstructures and components of the MoSi2-Si3N4-WSi2/Mo composites were investigated using scanning electron microscope with energy-dispersive spectroscopy. A special microstructure with MoSi2 core surrounded by a thin layer of (Mo,W)Si2 ring was found in the MoSi2-Si3N4-WSi2 composites. The intermediate layers of Mo5Si3 and (Mo,W)5Si3 in the MoSi2-Si3N4-WSi2/Mo diffusion couples were formed at different diffusion stages, which grew parabolically. Activation energy of the growth of intermediate layers in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo diffusion couple was calculated to be 316 ± 23 kJ/mol. Besides, the hindering effect of WSi2 addition on the growth of intermediate layers was illustrated by comparing the silicon diffusion coefficients in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo and MoSi2-3.5 vol.% Si3N4/Mo diffusion couples. MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2 coating on Mo substrate exhibited a better high-temperature oxidation resistance in air than that of MoSi2-3.5 vol.% Si3N4 coating.

  8. Growth Kinetics and Microstructure Evolution of Intermediate Phases in MoSi2-Si3N4-WSi2/Mo Diffusion Couples

    NASA Astrophysics Data System (ADS)

    Zhang, Houan; Huang, Yu; Lin, Jia; Chen, Ying; Gu, Siyong

    2017-02-01

    The growth kinetics and silicon diffusion coefficients of intermediate silicide phases in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo diffusion couple prepared by spark plasma sintering were investigated in temperatures ranging from 1200 to 1500 °C. The intermediate silicide phases were characterized by x-ray diffraction. The microstructures and components of the MoSi2-Si3N4-WSi2/Mo composites were investigated using scanning electron microscope with energy-dispersive spectroscopy. A special microstructure with MoSi2 core surrounded by a thin layer of (Mo,W)Si2 ring was found in the MoSi2-Si3N4-WSi2 composites. The intermediate layers of Mo5Si3 and (Mo,W)5Si3 in the MoSi2-Si3N4-WSi2/Mo diffusion couples were formed at different diffusion stages, which grew parabolically. Activation energy of the growth of intermediate layers in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo diffusion couple was calculated to be 316 ± 23 kJ/mol. Besides, the hindering effect of WSi2 addition on the growth of intermediate layers was illustrated by comparing the silicon diffusion coefficients in MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2/Mo and MoSi2-3.5 vol.% Si3N4/Mo diffusion couples. MoSi2-3.5 vol.% Si3N4-5.0 vol.% WSi2 coating on Mo substrate exhibited a better high-temperature oxidation resistance in air than that of MoSi2-3.5 vol.% Si3N4 coating.

  9. New approach to the growth of low dislocation relaxed SiGe material

    NASA Astrophysics Data System (ADS)

    Powell, A. R.; Iyer, S. S.; LeGoues, F. K.

    1994-04-01

    In this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an ultrathin silicon on insulator (SOI) substrate with a superficial silicon thickness less than the SiGe layer thickness. Initially, the thin Si layer is put under tension due to an equalization of the strain between the Si and SiGe layers. Thereafter, the strain created in the thin Si layer relaxes by plastic deformation. Since the dislocations are formed and glide in the thin Si layer, no threading dislocation is ever introduced in to the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis. We thus have a method for producing very low dislocation, relaxes SiGe films with the additional benefit of an SOI substrate.

  10. Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

    PubMed

    Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

    2015-02-27

    Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

  11. Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices for optoelectronics

    NASA Astrophysics Data System (ADS)

    Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

    2015-02-01

    Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb3+ luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb3+ inner transitions belonging to 5D4 levels except for the CL spectrum, in which 5D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the 5D3 state and the non-radiative relaxation rate of the 5D3-5D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

  12. Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH4-NH3 gas mixtures.

    PubMed

    Eustergerling, Brett; Hèden, Martin; Shi, Yujun

    2007-11-01

    The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the SiH(4)/NH(3) hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., H(2), N(2) and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their "fingerprint" fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both NH(3) and SiH(4) in the HWCVD reactor. In using the LIEI source to SiH(4), NH(3) and their mixtures, it has been shown that the NH(3) decomposition is suppressed with the addition of SiH(4) molecules. Examination of the NH(3) decomposition percentage and the time to reach the N(2) and H(2) steady-state intensities for various NH(3)/SiH(4) mixtures suggests that the extent of the suppression is enhanced with more SiH(4) content in the mixture. With increasing filament temperatures, the negative effect of SiH(4) becomes less important.

  13. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency

    NASA Astrophysics Data System (ADS)

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-01

    A p-n junction was made on p-type Si<100> wafer (15 × 15 × 0.2 mm3 in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n+ Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm-2, the fill factor was 0.779 and the conversion efficiency was 18.97%.

  14. The Stellar Imager (SI) project: a deep space UV/Optical Interferometer (UVOI) to observe the Universe at 0.1 milli-arcsec angular resolution

    NASA Astrophysics Data System (ADS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2009-04-01

    The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI’s science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a “Flagship and Landmark Discovery Mission” in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA’s Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/

  15. Atomic state and characterization of nitrogen at the SiC/SiO{sub 2} interface

    SciTech Connect

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-21

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO{sub 2} interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO{sub 2}). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs.

  16. The 28Si(p,t)26Si*(p) reaction and implications for the astrophysical 25Al(p,gamma)26Si reaction rate

    SciTech Connect

    Chipps, K.; Bardayan, Daniel W; Chae, K. Y.; Cizewski, J. A.; Kozub, R. L.; Liang, J Felix; Matei, Catalin; Moazen, Brian; Nesaraja, Caroline D; O'Malley, Patrick; Pain, S. D.; Peters, W. A.; Pittman, S. T.; Schmitt, Kyle; Smith, Michael Scott

    2010-10-01

    Several resonances in 25Al(p, )26Si have been studied via the 28Si(p,t)26Si reaction. Triton energies and angular distributions were measured using a segmented annular detector array. An additional silicon detector array was used to simultaneously detect the coincident protons emitted from the decay of states in 26Si above the proton threshold, in order to determine branching ratios. A resonance at 5927 4 keV has been experimentally confirmed as the first = 0 state above the proton threshold, with a proton branching ratio consistent with one.

  17. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si- M heterojunctions

    NASA Astrophysics Data System (ADS)

    Kamilov, T. S.; Klechkovskaya, V. V.; Sharipov, B. Z.; Ivakin, G. I.

    2013-06-01

    A mechanism behind the saturation of the photocurrent and occurrence of negative differential photoconductivity in Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si- M heterojunctions is found. Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si- M structures are studied with a model of back-to-back diodes. Photocurrent-voltage characteristics are taken at high constant and pulsed applied biases. It is found that the nonlinearity of the photocurrent-voltage characteristics and photoconductivity kinetics are due to the quenching of photoconductivity by Joule self-heating.

  18. Temperature dependent properties of silicon containing diamondlike carbon films prepared by plasma source ion implantation

    NASA Astrophysics Data System (ADS)

    Hatada, R.; Flege, S.; Baba, K.; Ensinger, W.; Kleebe, H.-J.; Sethmann, I.; Lauterbach, S.

    2010-04-01

    Silicon containing diamondlike carbon (Si-DLC) films were prepared on silicon wafer substrates by a plasma source ion implantation method with negative pulses superposed on a negative dc voltage. A mixture of acetylene and tetramethylsilane gas was introduced into the discharge chamber as working gases for plasma formation. Ions produced in the plasma are accelerated toward a substrate holder because of the negative voltage applied directly to it. After deposition, the films were annealed for 0.5 h in ambient air at temperatures up to 923 K in order to evaluate the thermal stability of the Si-DLC films. The films were analyzed by x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy, and Raman spectroscopy. The surface morphology of the films and the film thickness were observed by atomic force microscopy and scanning electron microscopy. The mechanical and tribological properties were investigated by an indentation method and a ball-on-disk test. The results show the silicon containing DLC films were amorphous and the surface roughness of the Si containing DLC films was very smooth and no special structure was observed. Integrated intensity ratios ID/IG of Raman spectroscopy of the Si containing DLC films decreased with Si content. The Raman spectra showed that the structure of the Si-free DLC film changed to a graphitelike structure with increasing annealing temperature, whereas that of the 24 at. % Si containing DLC films did not change at the maximum temperature used in this study. A very low friction coefficient was obtained for the 13 at. % Si containing DLC film. The surface roughness and the hardness of the films changed with increasing annealing temperature. The formation of Si oxide in a near surface layer was confirmed by XPS and it prevents further oxidation of the inside of the film. Heat resistivity of DLC films can be improved by Si addition into the DLC films.

  19. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.

    PubMed

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M; Hirohata, Atsufumi; Lazarov, Vlado K

    2016-10-05

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  20. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

    NASA Astrophysics Data System (ADS)

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hirohata, Atsufumi; Lazarov, Vlado K.

    2016-10-01

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  1. Elastic and inelastic properties of SiC/Si biomorphic composites and biomorphic SiC based on oak and eucalyptus

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Nefagin, A. S.; Smirnov, B. I.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.; Sepulveda, R.

    2006-09-01

    This paper reports on the results of a comparative investigation into the elastic and microplastic properties of biomorphic SiC/Si composites and biomorphic SiC prepared by pyrolysis of oak and eucalyptus with subsequent infiltration of molten silicon into a carbon matrix and additional chemical treatment to remove excess silicon. The acoustic studies were performed by the composite oscillator technique using resonant longitudinal vibrations at frequencies of about 100 kHz. It is shown that, in biomorphic SiC (as in biomorphic SiC/Si) at small-amplitude strains ɛ, adsorption and desorption of the environmental (air) molecules determine to a considerable extent the Young’s modulus E and the internal friction (decrement of acoustic vibrations δ) and that the changes in E and δ at these amplitudes are irreversible. The stress-microplastic strain curves are constructed from the acoustic data for the materials under study at temperatures of 100 and 290 K.

  2. Raman scattering from very thin Si layers of Si/SiO2 superlattices: Experimental evidence of structural modification in the 0.8-3.5 nm thickness region

    NASA Astrophysics Data System (ADS)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei; Kilpelä, Olli; Sinkkonen, Juha

    1999-11-01

    Raman study of very thin (⩽3.5 nm) Si layers constituting Si/SiO2 superlattices and grown by molecular beam epitaxy is described. The Raman spectra show systematic dependence on thickness of the Si layers, which highlights the variety of disordered microstructures in the Si/SiO2 superlattices. A clear change in the vibrational properties is found to occur in the 0.8-3.5 nm thickness region. In particular, the Raman spectra are typical for amorphous silicon for the thicker layers, and the characteristic phonon band disappears for the thinner layers, presumably representing another form of Si coordination with a small Raman scattering cross section. In addition, absorption of the material changes essentially with the Si-layer thickness. Photoluminescence is detected from the Si/SiO2 superlattices, the superlattices with 1.2 and 1.8 nm Si layers being the most efficient emitters among our samples, and the photoluminescence is blueshifted with the decrease of the Si-layer thickness. The Raman spectra show no sign of nanocrystalline structure at any thickness of the as-deposited Si layers so that the observed photoluminescence cannot be connected with Si nanocrystallities. Annealing strongly changes the Raman and photoluminescence spectra, a well-ordered Si phase appears in the superlattices, but its increase does not correlate with the photoluminescence, which further disregard it as an emitter. Nevertheless, the emitting phase is not identified in the Raman spectra.

  3. Effect composition of SiCp and TiB to the mechanical properties of composite Al7Si-Mg-SiCp by the method of semi solid stir casting

    NASA Astrophysics Data System (ADS)

    Bhiftime, E. I.; Sulardjaka, Nugroho, Sri

    2016-04-01

    Recently, studies on Aluminum Matrix Composite (AMC) were growing rapidly. AMC reinforced with SiCp particles in the semi solid stir casting method was the most simple way. In particular, the purpose of the present study was to investigate the effect composition of SiCp and TiB to the mechanical properties of the composites Al7Si-Mg-SiCp and Al7Si-Mg-TiB-SiCp. The composites used were Al7Si as the matrix and SiCp as the reinforcement (10, 15, 20 wt%). The casting method used on the study was the semi solid stir casting. The matrix was melted at the temperature of 800 °C. Then, the stirring process started at 590 °C with the speed of 500 rpm for 180 seconds. The composites was heated again until the pouring temperature was at 750 °C. The results of the present study indicated to be successful in which SiCp particles dispersed uniformly in the matrix composites. Further, the hardness value and porosity of the composites Al7Si-Mg-SiCp and Al7Si-Mg-TiB-SiCp increased along with the addition of TiB. Besides, the hardness value increased in the average of 10.5% at the variation of 20% SiCp. Whereas, the porosity value increased in the average of 54.3% at the variation of 20% SiCp.

  4. Electron impact collision strengths in Si IX, Si X, and Si XI

    SciTech Connect

    Liang Guiyun; Zhao Gang . E-mail: gzhao@bao.ac.cn; Zeng Jiaolong

    2007-05-15

    Electron impact collision strengths among 560 levels of Si IX, 320 levels of Si X, and 350 levels of Si XI have been calculated using the Flexible Atomic Code of Gu [M.F. Gu, Astrophys. J. 582 (2003) 1241]. Collision strengths {omega} at 10 scattered electron energies, namely 10, 50, 100, 200, 400, 600, 800, 1000, 1500, and 2000 eV, are reported. Assuming a Maxwellian energy distribution, effective collision strengths Y are obtained on a finer electron temperature grid of 0.5, 1.0, 2.0, 3.0, 4.0, 5.0, and 6.0 MK, which covers the typical temperature range of astrophysical hot plasmas. Additionally, radiative rates A and weighted oscillator strengths gf are given for the more probable transitions among these levels. Comparisons of our results with available predictions reported in earlier literature are made and the accuracy of the data is assessed. Most transitions exhibit a good agreement, but large differences in gf appear for a few cases, which are due to the different configuration interactions included in different theoretical calculations. For excitations among levels of the ground and lower excited configurations, large discrepancies of Y may have resulted from the consideration of resonance effects in earlier works.

  5. Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4 whiskers

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor)

    2002-01-01

    A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

  6. Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4whiskers

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor)

    2001-01-01

    A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

  7. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  8. Kentucky Department for Natural Resources and Environmental Protection permit application for air contaminant source: SRC-I demonstration plant, Newman, Kentucky. Supplement I. [Additional information on 38 items requested by KY/DNREP

    SciTech Connect

    Pearson, Jr., John F.

    1981-02-13

    In response to a letter from KY/DNREP, January 19, 1981, ICRC and DOE have prepared the enclosed supplement to the Kentucky Department for Natural Resources and Environmental Protection Permit Application for Air Contaminant Source for the SRC-I Demonstration Plant. Each of the 38 comments contained in the letter has been addressed in accordance with the discussions held in Frankfort on January 28, 1981, among representatives of KY/DNREP, EPA Region IV, US DOE, and ICRC. The questions raised involve requests for detailed information on the performance and reliability of proprietary equipment, back-up methods, monitoring plans for various pollutants, composition of wastes to flares, emissions estimates from particular operations, origin of baseline information, mathematical models, storage tanks, dusts, etc. (LTN)

  9. Development and Brazing Ability of Cu-Si-Ti Filler Metals for Joining Si3N4

    NASA Astrophysics Data System (ADS)

    Naka, Masaaki; Takase, Hideki; Scuster, J. C.

    Cu-5Si-xTi filler alloys for joining Si3N4 were developed, and the joining ability of the alloys was investigated by measuring contact angles on Si3N4 in vacuum and strength of Si3N4 joint brazed with the filler alloys. The addition of Ti content of 3 at% or more decreased the contact angle on Si3N4. The alloys containing Ti content of 5at% showed the lowest contact angle and good wettability. Si3N4 was brazed to Si3N4 with the filler alloys containing Ti content of 3 at% or more, and the strength of the Si3N4 joint increased with the Ti content in the filler alloys. The increase in the amount of TiN and Ti5Si3 which was formed by the reaction of Ti in the filler with Si3N4 raised the strength of the Si3N4 joint.

  10. Evidence of Topological Nodal-Line Fermions in ZrSiSe and ZrSiTe

    NASA Astrophysics Data System (ADS)

    Hu, Jin; Tang, Zhijie; Liu, Jinyu; Liu, Xue; Zhu, Yanglin; Graf, David; Myhro, Kevin; Tran, Son; Lau, Chun Ning; Wei, Jiang; Mao, Zhiqiang

    2016-07-01

    A Dirac nodal-line semimetal phase, which represents a new quantum state of topological materials, has been experimentally realized only in a few systems, including PbTaSe2 , PtSn4 , and ZrSiS. In this Letter, we report evidence of nodal-line fermions in ZrSiSe and ZrSiTe probed in de Haas-van Alphen quantum oscillations. Although ZrSiSe and ZrSiTe share a similar layered structure with ZrSiS, our studies show the Fermi surface (FS) enclosing a Dirac nodal line has a 2D character in ZrSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal-line fermion density in this family of materials (˜1020 cm-3 ) is much higher than the Dirac fermion density of other topological materials with discrete nodes. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers the first platform to explore exotic properties of topological nodal-line fermions in low dimensions.

  11. Evidence of Topological Nodal-Line Fermions in ZrSiSe and ZrSiTe.

    PubMed

    Hu, Jin; Tang, Zhijie; Liu, Jinyu; Liu, Xue; Zhu, Yanglin; Graf, David; Myhro, Kevin; Tran, Son; Lau, Chun Ning; Wei, Jiang; Mao, Zhiqiang

    2016-07-01

    A Dirac nodal-line semimetal phase, which represents a new quantum state of topological materials, has been experimentally realized only in a few systems, including PbTaSe_{2}, PtSn_{4}, and ZrSiS. In this Letter, we report evidence of nodal-line fermions in ZrSiSe and ZrSiTe probed in de Haas-van Alphen quantum oscillations. Although ZrSiSe and ZrSiTe share a similar layered structure with ZrSiS, our studies show the Fermi surface (FS) enclosing a Dirac nodal line has a 2D character in ZrSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal-line fermion density in this family of materials (∼10^{20}  cm^{-3}) is much higher than the Dirac fermion density of other topological materials with discrete nodes. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers the first platform to explore exotic properties of topological nodal-line fermions in low dimensions.

  12. Development and Characterization of SiC)/ MoSi2-Si3N4(p) Hybrid Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    1998-01-01

    Intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cu cm versus 9 g/cu cm for current engine materials), and ease of machining, make it an attractive structural material. However, the use of MoSi2 has been hindered due to its poor toughness at low temperatures, poor creep resistance at high temperatures, and accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 450 and 550 C. Continuous fiber reinforcing is very effective means of improving both toughness and strength. Unfortunately, MoSi2 has a relatively high coefficient of thermal expansion (CTE) compared to potential reinforcing fibers such as SiC. The large CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling. Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix

  13. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  14. Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Maserjian, Joseph; Ksendzov, A.; Huberman, Mark L.; Terhune, R.; Krabach, T. N.

    1990-01-01

    There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

  15. Landscape cultivation alters δ30Si signature in terrestrial ecosystems.

    NASA Astrophysics Data System (ADS)

    Vandevenne, F. I.; Delvaux, C.; Huyghes, H.; Ronchi, B.; Govers, G.; Barão, A. L.; Clymans, W.; Meire, P.; André, L.; Struyf, E.

    2014-12-01

    Despite increasing recognition of the importance of biological Si cycling in controlling dissolved Si (DSi) in soil and stream water, effects of human cultivation on the Si cycle remain poorly understood. Sensitive tracer techniques to identify and quantify Si in the soil-plant-water system could be highly relevant in addressing these uncertainties. Stable Si isotopes are promising tools to define Si sources and sinks along the ecosystem flow path, as intense fractionation occurs during chemical weathering and uptake of dissolved Si in plants. Yet they remain underexploited in the end product of the soil-plant system: the soil water. Here, stable Si isotope ratios (δ30Si) of dissolved Si in soil water were measured along a land use gradient (continuous forest, continuous pasture, young cropland and continuous cropland) with similar parent material (loess) and homogenous bulk mineralogical and climatological properties (Belgium). Soil water δ30Si signatures are clearly separated along the gradient, with highest average signatures in continuous cropland (+1.61‰), intermediate in pasture (+1.05‰) and young cropland (+0.89 ‰) and lowest in forest soil water (+0.62‰). Our data do not allow distinguishing biological from pedogenic/lithogenic processes, but point to a strong interaction of both. We expect that increasing export of light isotopes in disturbed land uses (i.e. through agricultural harvest), and higher recycling of 28Si and elevated weathering intensity (including clay dissolution) in forest systems will largely determine soil water δ30Si signatures of our systems. Our results imply that soil water δ30Si signature is biased through land management before it reaches rivers and coastal zones, where other fractionation processes take over (e.g. diatom uptake and reverse weathering in floodplains). In particular, a direct role of agriculture systems in lowering export Si fluxes towards rivers and coastal systems has been shown. Stable Si isotopes have

  16. Synthesis and characterization of Si-SiO 2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhou, W. M.; Liu, X.; Zhang, Y. F.; Lai, Y. J.; Guo, X. Q.

    2007-01-01

    The bulk SiC/SiO 2 nanocomposites were synthesized without the presence of catalyst by high-frequency induction heating of SiO and activated carbon fibers in the temperature of 1400 °C for 20 min. The as-synthesized materials exhibit the morphologies of self-assembly nanograss, nanocolumn and Pine-tree-branch-like nanostructure. The Si-SiO 2 nanocomposites would open up new opportunities for fundamental nanodevice studies and applications.

  17. Si XIII and Si XIV line emission search with the ANS crystal spectrometer

    NASA Technical Reports Server (NTRS)

    Parsignault, D. R.; Delvaille, J. P.; Epstein, A.; Grindlay, J. E.; Schnopper, H. W.

    1978-01-01

    The final results of the search for Si XIII and Si XIV line emission, using the ANS Bragg crystal spectrometer, are presented. No positive line detection was achieved in any of the measurements made on several types of cosmic object; i.e., a transient X-ray source, close binary systems, supernova remnants, GX sources, and clusters of galaxies. Three-sigma upper limits for discrete line emission from these objects are reported and compared with line strengths inferred from other proportional-counter and Bragg spectrometer data. The present upper limit of 1.0 eV for the equivalent width of a narrow Si XIV line emission from the X-ray nova A0620-00 is an order of magnitude lower than previous limits set by other experiments.

  18. Airborne Emissions from Si/FeSi Production

    NASA Astrophysics Data System (ADS)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2017-02-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  19. Dynamics of the Si(111) surface phase transition

    SciTech Connect

    HANNON,J.B.; HIBINO,H.; BARTELT,N.C.; SWARTZENTRUBER,BRIAN S.; OGINO,T.; KELLOGG,G.L.

    1999-01-27

    The authors have used low-energy electron microscopy to investigate the dynamics of the Si(111) 7 x 7 {r_arrow} 1 x 1 phase transition. Because the densities of the two phases differ, the phase transformation is analogous to precipitation in bulk systems: additional material must diffuse to the phase boundaries in order for the transformation to occur. By measuring the size evolution of an ensemble of domains, and comparing the results to simulations, they have identified a new mechanism of precipitate growth. The source of material necessary for the transformation is the random creation of atom/vacancy pairs at the surface. This mechanism contrasts sharply with classical theories of precipitation, in which mass transport kinetics determine the rate of transformation.

  20. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    NASA Technical Reports Server (NTRS)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  1. The use of Ge/Si ratios to quantify Si transformations in grassland ecosystems

    NASA Astrophysics Data System (ADS)

    Blecker, S. W.; Derry, L. A.; Chadwick, O. A.; Kelly, E. F.

    2005-12-01

    . The data suggest that stream water Si is not derived entirely from ground water and that biogenic sources are plausible.

  2. Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces

    NASA Astrophysics Data System (ADS)

    Jang, Jin-Wook; Hayes, Scott; Lin, Jong-Kai; Frear, Darrel R.

    2004-06-01

    The dissolution behavior of Si (100) and (111) dies by eutectic AuSi solder was investigated. On the Si (100) surface, the dissolution primarily occurred by the formation of craters resulting in a rough surface. The dissolution of the Si (111) resulted in a relatively smooth surface. The morphology of the Si (100) surface during a AuSi soldering reaction exhibited more time-dependent behavior and the etching craters on a Si (100) surface grew larger with time whereas Si (111) did not significantly change. This difference was ascribed to the surface energy differences between Si (111) and (100) surfaces that resulted in the two- and three-dimensional dissolution behaviors, respectively. This difference plays an important role in the formation of voids during the AuSi die bonding. The etching craters on Si (100) act as a AuSi solder sink and the regions surrounded by etch pits tend to become voids. For Si (111), flat surfaces were observed in the voided regions. Cross section analysis showed that no solder reaction occurred in the voided region of the Si (111) surface. This suggests the possibility of the formation of a thin inert layer in a potentially voided region prior to assembly. To achieve void-free die bonding, different parameters must be adjusted to the Si (100) and Si (111) surfaces with the AuSi alloy.

  3. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  4. Partitioning of Si and platinum group elements between liquid and solid Fe-Si alloys

    NASA Astrophysics Data System (ADS)

    Morard, G.; Siebert, J.; Badro, J.

    2014-05-01

    Crystallization of the Earth's inner core fractionates major and minor elements between the solid and liquid metal, leaving physical and geochemical imprints on the Earth's core. For example, the density jump observed at the Inner Core Boundary (ICB) is related to the preferential partitioning of lighter elements in the liquid outer core. The fractionation of Os, Re and Pt between liquid and solid during inner core crystallization has been invoked as a process that explains the observed Os isotopic signature of mantle plume-derived lavas (Brandon et al., 1998; Brandon and Walker, 2005) in terms of core-mantle interaction. In this article we measured partitioning of Si, Os, Re and Pt between liquid and solid metal. Isobaric (2 GPa) experiments were conducted in a piston-cylinder press at temperatures between 1250 °C and 1600 °C in which an imposed thermal gradient through the sample provided solid-liquid coexistence in the Fe-Si system. We determined the narrow melting loop in the Fe-Si system using Si partitioning values and showed that order-disorder transition in the Fe-Si solid phases can have a large effect on Si partitioning. We also found constant partition coefficients (DOs, DPt, DRe) between liquid and solid metal, for Si concentrations ranging from 2 to 12 wt%. The compact structure of Fe-Si liquid alloys is compatible with incorporation of Si and platinum group elements (PGEs) elements precluding solid-liquid fractionation. Such phase diagram properties are relevant for other light elements such as S and C at high pressure and is not consistent with inter-elemental fractionation of PGEs during metal crystallization at Earth's inner core conditions. We therefore propose that the peculiar Os isotopic signature observed in plume-derived lavas is more likely explained by mantle source heterogeneity (Meibom et al., 2002; Baker and Krogh Jensen, 2004; Luguet et al., 2008).

  5. Mechanism of tantalum adhesion on SiLK{sup TM}

    SciTech Connect

    Hu Yue; Yang Shuowang; Chen Xiantong; Lu Dong; Feng Yuanping; Wu Ping

    2005-09-19

    Tantalum adhesion on SiLK{sup TM} was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK{sup TM}. In addition, the degradation effects of H{sub 2}/He reactive plasma clean on Ta adhesion on SiLK{sup TM} was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK{sup TM} with Cu up to seven metal layers.

  6. Variations of δ 30Si and Ge/Si with weathering and biogenic input in tropical basaltic ash soils under monoculture

    NASA Astrophysics Data System (ADS)

    Opfergelt, S.; Cardinal, D.; André, L.; Delvigne, C.; Bremond, L.; Delvaux, B.

    2010-01-01

    In soils, silicon released by mineral weathering can be retrieved from soil solution through clay formation, Si adsorption onto secondary oxides and plant uptake, thereby impacting the Si-isotopic signature and Ge/Si ratio of dissolved Si (DSi) exported to rivers. Here we use these proxies to study the contribution of biogenic Si (BSi) in a soil-plant system involving basaltic ash soils differing in weathering degree under intensive banana cropping. δ 30Si and Ge/Si ratios were determined in bulk soils (<2 mm), sand (50-2000 μm), silt (2-50 μm), amorphous Si (ASi, 2-50 μm) and clay (<2 μm) fractions: δ 30Si by MC-ICP-MS Nu Plasma in medium resolution, operating in dry plasma with Mg doping (δ 30Si vs. NBS28 ± 0.12‰ ± 2 σSD), Ge/Si computed after determination of Ge and Si concentrations by HR-ICP-MS and ICP-AES, respectively. Components of the ASi fraction were quantified by microscopic counting (phytoliths, diatoms, ashes). Compared to fresh ash (δ 30Si = -0.38‰; Ge/Si = 2.21 μmol mol -1), soil clay fractions (<2 μm) were enriched in light Si isotopes and Ge: with increasing weathering degree, δ 30Si decreased from -1.19 to -2.37‰ and Ge/Si increased from 4.10 to 5.25 μmol mol -1. Sand and silt fractions displayed δ 30Si values close to fresh ash (-0.33‰) or higher due to saharian dust quartz deposition, whose contribution was evaluated by isotopic mass balance calculation. Si-isotopic signatures of bulk soils (<2 mm) were strongly governed by the relative proportions of primary and secondary minerals: the bulk soil Si-isotopic budget could be closed indicating that all the phases involved were identified. Microscopic counting highlighted a surface accumulation of banana phytoliths and a stable phytolith pool from previous forested vegetation. δ 30Si and Ge/Si values of clay fractions in poorly developed volcanic soils, isotopically heavier and Ge-depleted in surface horizons, support the occurrence of a DSi source from banana phytolith

  7. Probing the defect state of individual precipitates grown in an Al-Mg-Si alloy

    SciTech Connect

    Klobes, Benedikt; Korff, Bjoern; Balarisi, Osman; Eich, Patrick; Haaks, Matz; Maier, Karl; Sottong, Reinhard; Huehne, Sven-Martin; Mader, Werner; Staab, Torsten E. M.

    2010-08-01

    Precipitates forming in decomposable aluminum alloys such as Al-Mg-Si evolve toward the corresponding intermetallic phase, which is {beta} (Mg{sub 2}Si) in this case, depending on heat-treatment conditions. Individual {beta} precipitates were produced in an Al-1.11 at. % Mg-0.77 at. % Si alloy and identified using optical as well as electron microscopy. The individual {beta} precipitates could be investigated with regard to their intrinsic crystal defects using a finely focused positron microbeam provided by the Bonn Positron Microprobe. Comparison with theoretical calculations of the Doppler broadening of annihilation radiation reveals that {beta} precipitates most likely do not contain vacancies in either sublattice and that 0.16 is the upper bound of the fraction of trapped positrons. The usage of different enhancement factors had only little influence on the calculations whereas the general gradient approximation affected the contribution of Si orbitals, in particular. Additional measurements of the Doppler broadening based on the radioactive source {sup 68}Ge, which emits high-energy positrons probing bulk regions of the sample, were carried out. These measurements show that {beta} precipitates are sparsely distributed in the Al matrix.

  8. Additive Similarity Trees

    ERIC Educational Resources Information Center

    Sattath, Shmuel; Tversky, Amos

    1977-01-01

    Tree representations of similarity data are investigated. Hierarchical clustering is critically examined, and a more general procedure, called the additive tree, is presented. The additive tree representation is then compared to multidimensional scaling. (Author/JKS)

  9. Microstructure of as-fabricated UMo/Al(Si) plates prepared with ground and atomized powder

    NASA Astrophysics Data System (ADS)

    Jungwirth, R.; Palancher, H.; Bonnin, A.; Bertrand-Drira, C.; Borca, C.; Honkimäki, V.; Jarousse, C.; Stepnik, B.; Park, S.-H.; Iltis, X.; Schmahl, W. W.; Petry, W.

    2013-07-01

    UMo-Al based fuel plates prepared with ground U8wt%Mo, ground U8wt%MoX (X = 1 wt%Pt, 1 wt%Ti, 1.5 wt%Nb or 3 wt%Nb) and atomized U7wt%Mo have been examined. The first finding is that that during the fuel plate production the metastable γ-UMo phases partly decomposed into two different γ-UMo phases, U2Mo and α'-U in ground powder or α″-U in atomized powder. Alloying small amounts of a third element to the UMo had no measurable effect on the stability of the γ-UMo phase. Second, the addition of some Si inside the Al matrix and the presence of oxide layers in ground and atomized samples is studied. In the case with at least 2 wt%Si inside the matrix a Silicon rich layer (SiRL) forms at the interface between the UMo and the Al during the fuel plate production. The SiRL forms more easily when an Al-Si alloy matrix - which is characterized by Si precipitates with a diameter ⩽1 μm - is used than when an Al-Si mixed powder matrix - which is characterized by Si particles with some μm diameter - is used. The presence of an oxide layer on the surface of the UMo particles hinders the formation of the SiRL. Addition of some Si into the Al matrix [7-11]. Application of a protective barrier at the UMo/Al interface by oxidizing the UMo powder [7,12]. Increase of the Mo content or use of UMo alloys with ternary element addition X (e.g. X = Nb, Ti, Pt) to stabilize the γ-UMo with respect to α-U or to control the UMo-Al interaction layer kinetics [9,12-24]. Use of ground UMo powder instead of atomized UMo powder [10,25] The points 1-3 are to limit the formation of the undesired UMo/Al layer. Especially the addition of Si into the matrix has been suggested [3,7,8,10,11,26,27]. It has been often mentioned that Silicon is efficient in reducing the Uranium-Aluminum diffusion kinetics since Si shows a higher chemical affinity to U than Al to U. Si suppresses the formation of brittle UAl4 which causes a huge swelling during the irradiation. Furthermore it enhances the

  10. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    NASA Astrophysics Data System (ADS)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  11. Wafer edge protection kit for MEMS and TSV Si-etching

    NASA Astrophysics Data System (ADS)

    Wieland, Robert; Nguyen, K.; Seidelmann, U.; Scholz, M.; Schrag, G.

    2015-05-01

    A new process kit for a SPTS Pegasus DRIE Si-Etch tool has been developed and tested for several different process regimes, e.g. bulk-Si cavity etching and TSV (through-Silicon-Via) etching with high aspect ratios <10:1, using the socalled Bosch process. Additionally, Si-etch back (recess etching) with a single step process has been tested as well. The especially developed "edge protection kit", consisting of Al2O3 material and optionally of PEEK material, covers the edge of a wafer, preventing it from being etched or even being etched away. However, placing such a part on top of the cathode, results in changes of the electric field distribution and the gas flow behavior compared to the standard process kit supplied by SPTS. The consequences may be altered Si-etch rates combined with changes of the tilt and side wall taper of the etched structures, mainly near the outside regions of the wafer. To this end, extensive investigations on the mask and bulk-Si etch rates, the tilt and taper angle of various MEMS test structures and their respective uniformity over the wafer surface have been performed. Additionally, simulations applying Comsol Multiphysics have been carried out to visualize the potential impact of the new process kit on the electrical field distribution. A simplex-optimization was carried out, varying the platen power and source power, in order to improve the tilt and to maintain the proper taper angle. One major advantage of the new process kit design compared to the original one is the reduction of movable parts to a minimum.

  12. Kapitza resistance of Si/SiO2 interface

    SciTech Connect

    Bowen Deng; Aleksandr Chenatynskiy; Marat Khafizov; David Hurley; Simon Phillpot

    2014-02-01

    A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

  13. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  14. Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1991-01-01

    The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.

  15. Bioprocessing of “Hair Waste” by Paecilomyces lilacinus as a Source of a Bleach-Stable, Alkaline, and Thermostable Keratinase with Potential Application as a Laundry Detergent Additive: Characterization and Wash Performance Analysis

    PubMed Central

    Cavello, Ivana A.; Hours, Roque A.; Cavalitto, Sebastián F.

    2012-01-01

    Paecilomyces lilacinus (Thom) Samson LPS 876, a locally isolated fungal strain, was grown on minimal mineral medium containing “hair waste,” a residue from the hair-saving unhairing process, and produced a protease with keratinolytic activity. This enzyme was biochemically characterized. The optimum reaction conditions, determined with a response surface methodology, were 60°C and pH 6.0. It was remarkably stable in a wide range of pHs and temperatures. Addition of Ca2+, Mg2+, or sorbitol was found to be effective in increasing thermal stability of the protease. PMSF and Hg2+ inhibited the proteolytic activity indicating the presence of a thiol-dependent serine protease. It showed high stability toward surfactants, bleaching agents, and solvents. It was also compatible with commercial detergents (7 mg/mL) such as Ariel, Skip, Drive, and Ace, retaining more than 70% of its proteolytic activity in all detergents after 1 h of incubation at 40°C. Wash performance analysis revealed that this protease could effectively remove blood stains. From these properties, this enzyme may be considered as a potential candidate for future use in biotechnological processes, as well as in the formulation of laundry detergents. PMID:23365760

  16. Bioprocessing of "Hair Waste" by Paecilomyces lilacinus as a Source of a Bleach-Stable, Alkaline, and Thermostable Keratinase with Potential Application as a Laundry Detergent Additive: Characterization and Wash Performance Analysis.

    PubMed

    Cavello, Ivana A; Hours, Roque A; Cavalitto, Sebastián F

    2012-01-01

    Paecilomyces lilacinus (Thom) Samson LPS 876, a locally isolated fungal strain, was grown on minimal mineral medium containing "hair waste," a residue from the hair-saving unhairing process, and produced a protease with keratinolytic activity. This enzyme was biochemically characterized. The optimum reaction conditions, determined with a response surface methodology, were 60°C and pH 6.0. It was remarkably stable in a wide range of pHs and temperatures. Addition of Ca(2+), Mg(2+), or sorbitol was found to be effective in increasing thermal stability of the protease. PMSF and Hg(2+) inhibited the proteolytic activity indicating the presence of a thiol-dependent serine protease. It showed high stability toward surfactants, bleaching agents, and solvents. It was also compatible with commercial detergents (7 mg/mL) such as Ariel, Skip, Drive, and Ace, retaining more than 70% of its proteolytic activity in all detergents after 1 h of incubation at 40°C. Wash performance analysis revealed that this protease could effectively remove blood stains. From these properties, this enzyme may be considered as a potential candidate for future use in biotechnological processes, as well as in the formulation of laundry detergents.

  17. Polyimide processing additives

    NASA Technical Reports Server (NTRS)

    Pratt, J. R.; St. Clair, T. L.; Burks, H. D.; Stoakley, D. M.

    1987-01-01

    A method has been found for enhancing the melt flow of thermoplastic polyimides during processing. A high molecular weight 422 copoly(amic acid) or copolyimide was fused with approximately 0.05 to 5 pct by weight of a low molecular weight amic acid or imide additive, and this melt was studied by capillary rheometry. Excellent flow and improved composite properties on graphite resulted from the addition of a PMDA-aniline additive to LARC-TPI. Solution viscosity studies imply that amic acid additives temporarily lower molecular weight and, hence, enlarge the processing window. Thus, compositions containing the additive have a lower melt viscosity for a longer time than those unmodified.

  18. [Food additives and healthiness].

    PubMed

    Heinonen, Marina

    2014-01-01

    Additives are used for improving food structure or preventing its spoilage, for example. Many substances used as additives are also naturally present in food. The safety of additives is evaluated according to commonly agreed principles. If high concentrations of an additive cause adverse health effects for humans, a limit of acceptable daily intake (ADI) is set for it. An additive is a risk only when ADI is exceeded. The healthiness of food is measured on the basis of nutrient density and scientifically proven effects.

  19. Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Fretwurst, E.; Klanner, R.; Pintilie, I.; Schwandt, J.; Turcato, M.

    2012-12-01

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron light source. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the surface densities of oxide charges and interface traps at the Si-SiO2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the surface density of oxide charges and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the surface density of oxide charges and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO2 to the Si-SiO2 interface. Finally, annealing studies have been performed at 60°C and 80°C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy and the annealing kinetics of oxide charges and surface current determined.

  20. Monitoring Observatinos of H2O and SiO Masers Toward Post-AGB Stars

    NASA Astrophysics Data System (ADS)

    Kim, Jaeheon; Cho, Se-Hyung; Yoon, Dong-Hwan

    2016-12-01

    We present the results of simultaneous monitoring observations of H_2O 6_{1,6}-5_{2,3} (22 GHz) and SiO J=1-0, 2-1, 3-2 maser lines (43, 86, 129 GHz) toward five post-AGB (candidate) stars, using the 21-m single-dish telescopes of the Korean VLBI Network. Depending on the target objects, 7 - 11 epochs of data were obtained. We detected both H_2O and SiO maser lines from four sources: OH16.1-0.3, OH38.10-0.13, OH65.5+1.3, and IRAS 19312+1950. We could not detect H_2O maser emission toward OH13.1+5.1 between the late OH/IR and post-AGB stage. The detected H_2O masers show typical double-peaked line profiles. The SiO masers from four sources, except IRAS 19312+1950, show the peaks around the stellar velocity as a single peak, whereas the SiO masers from IRAS 19312+1950 occur above the red peak of the H_2O maser. We analyzed the properties of detected maser lines, and investigated their evolutionary state through comparison with the full widths at zero power. The distribution of observed target sources was also investigated in the IRAS two-color diagram in relation with the evolutionary stage of post-AGB stars. From our analyses, the evolutionary sequence of observed sources is suggested as OH65.5+1.3 → OH13.1+5.1 → OH16.1-0.3 → OH38.10-0.13, except for IRAS 19312+1950. In addition, OH13.1+5.1 from which the H_2O maser has not been detected is suggested to be on the gateway toward the post-AGB stage. With respect to the enigmatic object, IRAS 19312+1950, we could not clearly figure out its nature. To properly explain the unusual phenomena of SiO and H_2O masers, it is essential to establish the relative locations and spatial distributions of two masers using VLBI technique. We also include the 1.2 - 160 μm spectral energy distribution using photometric data from the following surveys: 2MASS, WISE, MSX, IRAS, and AKARI (IRC and FIS). In addition, from the IRAS LRS spectra, we found that the depth of silicate absorption features shows significant variations

  1. Laser induced sponge-like Si in Si-rich oxides for photovoltaics.

    PubMed

    Gundogdu, S; Ozen, E Sungur; Hübner, R; Heinig, K H; Aydinli, A

    2013-10-07

    We show that a sponge-like structure of interconnected Si nanowires embedded in a dielectric matrix can be obtained by laser annealing of silicon rich oxides (SRO). Due to quantum confinement, the large bandgap displayed by these percolated nanostructures can be utilized as a tandem stage in 3rd generation thin-film solar cells. Well passivated by the SiO₂ dielectric matrix, they are expected to overcome the difficulty of carrier separation encountered in the case of isolated crystalline quantum dots. In this study PECVD grown SRO were irradiated by a cw Ar⁺ laser. Raman spectroscopy has been used to assess the crystallinity of the Si nanostructures and thus to optimize the annealing conditions as dwell times and power densities. In addition, Si plasmon imaging in the transmission electron microscope was applied to identify the sponge-like structure of phase-separated silicon.

  2. Evaluation of photovoltaic power generation system using spherical silicon solar cells and SiC-FET inverter

    NASA Astrophysics Data System (ADS)

    Matsumoto, Taisuke; Oku, Takeo; Hiramatsu, Koichi; Yasuda, Masashi; Shirahata, Yasuhiro; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2016-02-01

    A photovoltaic power generation system using spherical silicon (Si) solar cells and silicon carbide (SiC) field effect transistor (FET) inverter for photovoltaic applications was constructed and evaluated. The spherical Si solar cells were connected to the SiC-FET inverter and were used as a power source. Comparing the photovoltaic power generation system using an ordinary Si-FET inverter, direct current-alternating current conversion efficiencies of the SiC-FET inverter were improved due to reduction of power loss in the SiC-FET inverter.

  3. Differing reactivities of (trimpsi)M(CO)(2)(NO) complexes [M = V, Nb, Ta; trimpsi = (t)BuSi(CH(2)PMe(2))(3)] with halogens and halogen sources.

    PubMed

    Hayton, Trevor W; Legzdins, Peter; Patrick, Brian O

    2002-10-21

    Treatment of (trimpsi)V(CO)(2)(NO) (trimpsi = (t)BuSi(CH(2)PMe(2))(3)) with 1 equiv of PhICl(2) or C(2)Cl(6) or 2 equiv of AgCl affords (trimpsi)V(NO)Cl(2) (1) in moderate yields. Likewise, (trimpsi)V(NO)Br(2) (2) and (trimpsi)V(NO)I(2) (3) are formed by the reactions of (trimpsi)V(CO)(2)(NO) with Br(2) and I(2), respectively. The complexes (trimpsi)M(NO)I(2)(PMe(3)) (M = Nb, 4; Ta, 5) can be isolated in moderate to low yields when the (trimpsi)M(CO)(2)(NO) compounds are sequentially treated with 1 equiv of I(2) and excess PMe(3). The reaction of (trimpsi)V(CO)(2)(NO) with 2 equiv of ClNO forms 1 in low yield, but the reactions of (trimpsi)M(CO)(2)(NO) (M = Nb, Ta) with 1 equiv of ClNO generate (trimpsi)M(NO)(2)Cl (M = Nb, 6; Ta, 7). Complexes 6 and 7 are thermally unstable and decompose quickly at room temperature; consequently, they have been characterized solely by IR and (31)P[(1)H] NMR spectroscopies. All other new complexes have been fully characterized by standard methods, and the solid-state molecular structures of 1.3CH(2)Cl(2), 4.(3/4)CH(2)Cl(2), and 5.THF have been established by single-crystal X-ray diffraction analyses. A convenient method of generating Cl(15)NO has also been developed during the course of these investigations.

  4. Microstructure and chemical reaction in a Si[sub 3]N[sub 4]-TiC composite

    SciTech Connect

    Jowlay Huang; Huangliang Chiu; Mingtung Lee . Dept. of Materials Science and Engineering)

    1994-03-01

    The effects of TiC addition to Si[sub 3]N[sub 4] on microstructure and the chemical aspects of Si[sub 3]N[sub 4]-TiC interphase reaction were investigated in samples hot-pressed at 1,800 C in Ar and N[sub 2]. Composition of a TiC[sub 1[minus]x]N[sub x] solid solution was predicted based on thermodynamic calculation, with titanium carbonitride taken to be an ideal solid solution. The predicted value of x = 0.7 is slightly higher than that derived from the measured lattice parameter and Vegard's law. Four distinguishable areas were observed in samples hot-pressed in nitrogen atmosphere. They were identified as [beta]-Si[sub 3]N[sub 4] mixtures of TiC and titanium carbonitride solid solution, SiC with twins, and iron silicide. As the duration of hot-pressing increased, more titanium carbonitride was formed, while less TiC phase remained. Thermodynamic calculations indicate one source of nitrogen gas come from the decomposition of Si[sub 3]N[sub 4]. The TiC particles also became more irregular, and reactants were found inside or between TiC as the hot-pressing time was extended. Silicon carbide was not detected in samples which were hot-pressed in argon atmosphere; however, numerous pores were found around TiC.

  5. Growth of Nanostructure of Metal Oxides by Laser Ablation and by SiO2 Assisted Thermal Evaporation

    NASA Astrophysics Data System (ADS)

    EL Nadi, Lotfia M.; Mehena, Galila; Omar, Mgdy M.; Moneim, Hussein A.; Taieb, Fakiha H. A.; Rahiem, Faried A.

    2007-02-01

    We report the results of growing nanostructures of gallium oxide and indium oxide by two methods. In the first one we applied laser ablation in air of pure graphite rod filled with Gallium or Indium metals. The ablated plume then deposited on SS substrates in air. In the second method the oxides were synthesized by thermal heating of the Ga or In metals mixed with powder of graphite and covered with SiO2 plates, supported by ceramic, in high temperature oven. The ablation method produced nanowires of Ga2O3 and nano particles of In2O3 developing in nanowires. . The solid carbon ablated from the graphite rod existing in the ablated plum as fine solid particles mixed with metal Ga or In melt in contact with oxygen gas in air, produced the growth of the metal oxide nano structures by solid -liquid-gas mechanism. The silica assisted catalytic growth oxides produce only nano particle of each metal. The reaction of the metals with SiO2 melt and graphite produced Si and carbon. The then formed Si carbide can effectively initiate vapor- liquid-solid growth of nano structure metal oxide. It seems that SiO2 in addition to the atmospheric oxygen provide the oxygen source for forming metal oxide nano dots.

  6. Changes in Quartz During Heating and the Possible Effects on Si Production

    NASA Astrophysics Data System (ADS)

    Ringdalen, Eli

    2015-02-01

    In Si and FeSi production, the main Si source is SiO2, in the form of quartz. Reactions with SiO2 generate SiO gas that further reacts with SiC to Si. During heating, quartz will transform to other SiO2 modifications with cristobalite as the stable high-temperature phase. Transformation to cristobalite is a slow process. Its rate has been investigated for several industrial quartz sources and has been shown to vary considerably among the different quartz types. Other differences in behavior during heating between these quartz sources, such as softening temperature and volume expansion, have also been studied. The quartz-cristobalite ratio will affect the rate of reactions involving SiO2. The industrial consequences and other implications of the observed difference between quartz types are discussed. Initial studies of industrial quartz were published by Ringdalen et al. In the current work, a new experimental method has been developed, and an investigation of several new quartz sources has confirmed the earlier observed large variation between different sources. The repeatability of the data has been studied and the effect of gas atmosphere investigated. The results from the earlier work are included as a basis for the discussion.

  7. Silicidation of Ni(Yb) Film on Si(001)

    NASA Astrophysics Data System (ADS)

    Luo, Jia; Jiang, Yu-Long; Ru, Guo-Ping; Li, Bing-Zong; Chu, Paul K.

    2008-03-01

    The influence of the addition of Yb to Ni on the silicidation of Ni was investigated. The Ni(Yb) film was deposited on a Si(001) substrate by co-sputtering, and silicidation was performed by rapid thermal annealing (RTA). After silicidation, the sheet resistance of the silicide film was measured by the four-point probe method. X-ray diffraction and micro-Raman spectroscopy were employed to identify the silicide phases, and the redistribution of Yb after RTA was characterized by Rutherford backscattering spectrometry and Auger electron spectroscopy. The influence of the Yb addition on the Schottky barrier height (SBH) of the silicide/Si diode was examined by current voltage measurements. The experimental results reveal that the addition of Yb can suppress the formation of the high-resistivity Ni2Si phase, but the formation of low-resistivity NiSi phase is not affected. Furthermore, after silicidation, most of the Yb atoms accumulate in the surface layer and only a small number of Yb atoms pile up at the silicide/Si(001) interface. It is believed that the accumulation of a small amount of Yb at the silicide/Si(001) interface results in the SBH reduction observed in the Ni(Yb)Si/Si diode.

  8. Elasticity, Hardness and Thermal Conductivity of Si-Ge-Based Oxynitrides (SiGeN2O)

    NASA Astrophysics Data System (ADS)

    Ding, Yingchun; Chen, Min; Wu, Wenjuan; Xu, Ming

    2017-01-01

    Capitalizing on density functional theory, the novel Si-Ge-based oxynitrides (SiGeN2O) have been studied in terms of mechanical and thermal properties. Regarding α- or β-SiGeN2O, the SiGeN2O exhibits smaller mechanical moduli, suggesting a compressible and soft material. Our calculated lattice constants of two SiGeN2O phases are very consistent with other values. In addition, the hardness for SiGeN2O is investigated in details according to different semi-empirical methods. The results indicate a small hardness of two phases of SiGeN2O. Furthermore, the mechanical anisotropy, Debye temperature and the minimum thermal conductivity of two SiGeN2O compounds are clearly estimated for both SiGeN2O compounds. It is found that the SiGeN2O compounds show low thermal conductivity, which is suitable to be used as a thermal barrier coating.

  9. Theoretical study on the mechanism of cycloaddition reaction between silylene silylene(H₂Si=Si:) and acetaldehyde.

    PubMed

    Lu, Xiuhui; Shi, Leyi; Ji, Hua

    2012-11-01

    The mechanism of the cycloaddition reaction between singlet silylene silylene (H₂Si=Si:) and acetaldehyde has been investigated with CCSD(T)//MP2/6-31G* and CCSD(T)//MP2/6-31G** method, from the potential energy profile, we could predict that the reaction has three competitive dominant reaction pathways. The present rule of this reaction is that the 3p unoccupied orbital of the Si: atom in silylene silylene (H₂Si=Si:) inserts on the π orbital of acetaldehyde from oxygen side, resulting in the formation of an intermediate. Isomerization of the intermediate further leads to the generation of a four-membered ring silylene (the H₂Si-O in the opposite position). In addition, the [2 + 2] cycloaddition reaction of the two π-bonds in silylene silylene and acetaldehyde generates another four-membered ring silylene (the H₂Si-O in the syn-position). Because of the unsaturated property of Si: atom in the two four-membered ring silylenes, they could further react with acetaldehyde, resulting in the generation of two spiro-heterocyclic ring compounds with Si. Simultaneously, the ring strain of the four-membered ring silylene (the H₂Si-O in the syn-position) makes it isomerize to a twisted four-membered ring product.

  10. Thermomechanical Performance of Si-Ti-C-O and Sintered SiC Fiber-Bonded Ceramics at High Temperatures

    SciTech Connect

    Matsunaga, Tadashi; Lin, Hua-Tay; Singh, Mrityunjay; Kajii, Shinji; Matsunaga, Kenji; Ishikawa, Toshihiro

    2011-01-01

    The stress-temperature-lifetime response of Si-Ti-C-O fiber-bonded ceramic (Tyrannohex ) and sintered SiC fiber-bonded ceramic (SA-Tyrannohex ) materials were investigated in air from 500 to 1150 C and 500 to 1400 C, respectively. The apparent threshold stress of Si-Ti-C-O fiber-bonded ceramic was about 175 MPa in the 500-1150 C temperature range. When the applied stress of the sintered SiC fiber-bonded ceramic was below an apparent threshold stress (e.g., ~225MPa) for tests conducted 1150 C, no failures were observed for lifetimes up to 1000h. In the case of sintered SiC fiber-bonded ceramic, at the temperature of 1300 C, the apparent threshold stress decreased to 175 MPa. The decrease in strength seemed to be caused by grain growth which was confirmed from the SEM fractography. Both fiber-bonded ceramics exhibited much higher durability than a commercial SiC/SiC composite at temperatures above 500 C. In addition, results suggested that the sintered SiC fiber-bonded ceramic (SA-Tyrannohex) is more stable than a Hi-Nicalon/MI SiC composite with BN/SiC fiber coating at temperatures above 1300 C.

  11. Drawing siRNAs of viral origin out from plant siRNAs libraries.

    PubMed

    Miozzi, Laura; Pantaleo, Vitantonio

    2015-01-01

    Viruses are obligate intracellular entities that infect all forms of life. In plants, invading viral nucleic acids trigger RNA silencing machinery and it results in the accumulation of viral short interfering RNAs (v-siRNAs). The study of v-siRNAs population in biological samples has become a major part of many research projects aiming to identify viruses infecting them, including unknown viruses, even at extremely low titer. Currently, siRNA populations are investigated by high-throughput sequencing approaches, which generate very large data sets. The major difficulty in these studies is to properly analyze such huge amount of data. In this regard, easy-to-use bioinformatics tools to groom and decipher siRNA libraries and to draw out v-siRNAs are needed. Here we describe a workflow, which permit users with little experience in bioinformatics to draw out v-siRNAs from raw data sequences obtained by Illumina technology. Such pipeline has been released in the context of Galaxy, an open source Web-based platform for bioinformatics analyses.

  12. SI (Metric) handbook

    NASA Astrophysics Data System (ADS)

    Artusa, Elisa A.

    1994-03-01

    This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

  13. SI (Metric) handbook

    NASA Technical Reports Server (NTRS)

    Artusa, Elisa A.

    1994-01-01

    This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

  14. Microstructural and mechanical characterization of Al–Zn–Si nanocomposites

    SciTech Connect

    García-Villarreal, S.; Chávez-Valdez, A.; Moreno, K.J.; Leyva, C.; Aguilar-Martínez, J.A.; Hurtado, A.; Arizmendi-Morquecho, A.

    2013-09-15

    In this paper the addition of silicon nanoparticles into Al–Zn alloys to form metallic matrix nanocomposites by mechanical alloying process was investigated. The influence of various process parameters such as milling time and Si concentration in the Al–Zn matrix has an interesting effect on the microstructure and mechanical properties of the synthesized nanocomposites. The microstructural characterization of the nanocomposites was evaluated by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM–EDXS) and the mechanical properties were measured by nanoindentation and micro-hardness tests. The results showed that during mechanical milling Si is added to the Al–Zn matrix achieving a uniform and homogeneous dispersion. After solidification, it forms small particles of AlZnSi with blocky morphology in interdendritic regions. The nanoindentation profiles showed that the elastic modulus and hardness properties increase with increasing milling time. However, a high concentration of Si (> 1.2 wt.%) results in a saturation of Si in the Al–Zn matrix, which adversely affects the mechanical properties. Thus, it is important to tune the milling time and concentration of Si added to the Al–Zn alloys to control the growth of brittle phases that result in reduction of the mechanical properties of the material. - Highlights: • A novel technique for addition of Si nanocomposites into Al–Zn liquid alloy is reported. • Good dispersion and homogeneity of Si in the Al–Zn matrix are obtained. • Increasing Si content above 1.2 wt.% decreases the mechanical properties of Al–Zn alloy. • The saturation point of Si in 1.2 wt.% differs from Galvalume® composition. • The Al–Zn–1.5Si alloy with addition of nanocomposite shows 5.7 GPa of hardness.

  15. Fast SiPM Readout of the PANDA TOF Detector

    NASA Astrophysics Data System (ADS)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-05-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm3 SciTils read out by two single 3 × 3 mm2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  16. Si quantum dots in silicon nitride: Quantum confinement and defects

    SciTech Connect

    Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  17. Changes in Precipitation Sources over Glacial/Interglacial MIS 11 and 12 Examined by Δ17O of SiO2 Obtained from Diatoms along the Valles Caldera Lake Core, NM

    NASA Astrophysics Data System (ADS)

    Gibbons, J.; Sharp, Z. D.; Fawcett, P. J.

    2015-12-01

    Quantitative estimates of the isotopic composition of paleo-lake water have been made using 18O/16O (ẟ18O) in diatom silica (Dodd and Sharp, GCA, 2010). Post-mortem diatom silica equilibrates with ambient lake water within six months, chronicling the bulk oxygen isotope composition of the lake and resulting in silica that is near the quartz-water fractionation line (Dodd et al, GGG, 2012). The δ18O values of lacustrine diatoms from the Valles Caldera, NM, vary by ~25‰ between glacial and interglacial periods and suggest a collapse of the summer monsoon that currently provides 50% of the modern precipitation in NM. Triple oxygen isotope measurements of diatom silica may serve as a proxy for the isotopic composition of the lake water and as an estimate of paleo-humidity over the precipitation source. The deuterium excess parameter (d= ẟD - 8 ẟ18O) has been used along ice cores as a source relative humidity index, but is difficult to make in lake sediments. Instead, high precision 17O-excess (∆17O) measurements (=ẟ17O - 0.528 ẟ18O) may provide paleo-humidity information. Landais et al. (GRL, 2008) found a ∆17O difference of 0.02‰ in the Vostok ice core between glacial and interglacial times, interpreted as a function of changing relative humidity of the precipitation source. A 0.03‰ change was observed in glacial (∆17O=-0.22‰) and interglacial (∆17O=-0.19‰) diatom silica along the Valles Caldera lake core. Further information regarding the δ18O value of meteoric water can be calculated from paired δ18O-δ17O measurements. The combined δ18O-δ17O values of interglacial diatoms suggest a δ18Ometeoric water value of -9‰. Modern δ18O value of monsoonal precipitation in NM is ~-10‰. The δ18O of glacial diatoms suggest a δ18Ometeoric water = -20‰. Modern δ18O value of winter precipitation in NM is ~-20‰. These results suggest that the seasonality of precipitation in New Mexico can be inferred based on changes in the relative

  18. Role of Si in Improving the Shape Recovery of FeMnSiCrNi Shape Memory Alloys

    NASA Astrophysics Data System (ADS)

    Maji, Bikas C.; Krishnan, Madangopal; Gouthama; Ray, R. K.

    2011-08-01

    The effect of Si addition on the microstructure and shape recovery of FeMnSiCrNi shape memory alloys has been studied. The microstructural observations revealed that in these alloys the microstructure remains single-phase austenite ( γ) up to 6 pct Si and, beyond that, becomes two-phase γ + δ ferrite. The Fe5Ni3Si2 type intermetallic phase starts appearing in the microstructure after 7 pct Si and makes these alloys brittle. Silicon addition does not affect the transformation temperature and mechanical properties of the γ phase until 6 pct, though the amount of shape recovery is observed to increase monotonically. Alloys having more than 6 pct Si show poor recovery due to the formation of δ-ferrite. The shape memory effect (SME) in these alloys is essentially due to the γ to stress-induced ɛ martensite transformation, and the extent of recovery is proportional to the amount of stress-induced ɛ martensite. Alloys containing less than 4 pct and more than 6 pct Si exhibit poor recovery due to the formation of stress-induced α' martensite through γ- ɛ- α' transformation and the large volume fraction of δ-ferrite, respectively. Silicon addition decreases the stacking fault energy (SFE) and the shear modulus of these alloys and results in easy nucleation of stress-induced ɛ martensite; consequently, the amount of shape recovery is enhanced. The amount of athermal ɛ martensite formed during cooling is also observed to decrease with the increase in Si.

  19. Integrated optical sensing technologies on Si

    NASA Astrophysics Data System (ADS)

    Helmy, Amr S.; Abolghasem, P.; Ramanan, J.; Kang, D.; Logan, D.

    2015-01-01

    An effective approach to achieve efficient phase matching for second order nonlinearities, in multilayer structures will be discussed. It uses dispersion engineering in Bragg reflection waveguides to harness parametric processes in conjunction with concomitant dispersion and birefringence engineering in active devices. This technology enables novel coherent light sources using frequency conversion in a self-pumped chip form factor. These sources can also provide continuous coverage of spectral regions, which are not accessible by other technologies including quantum cascade lasers. This approach has been recently demonstrated in multi-layer Silicon-Oxy-Nitride (SiON) waveguides. Harnessing χ(2) in SiON offers a route for integration of broadband infrared sources using frequency mixing with opto-fluidics. Different approaches for implementing opto-fluidic structures on Si will be discussed, where the root cause of enhancing the retrieved Raman and infrared signals in these structures will be explained. Recent progress in using this approach to study different nanostructures and biological molecules will be presented.

  20. Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

    NASA Astrophysics Data System (ADS)

    Pippel, Eckhard; Woltersdorf, Jörg; Ólafsson, Halldor Ö.; Sveinbjörnsson, Einar Ö.

    2005-02-01

    We report on electrical and microscopic investigations aimed to clarify the origin of near-interface traps (NITs) in metal-silicon dioxide-4H-silicon carbide structures. Using capacitance-voltage and thermal dielectric relaxation current (TDRC) analysis we investigated NITs close to the 4H-SiC conduction-band edge in differently prepared thermal and deposited oxides and found that the traps give rise to two characteristic TDRC signatures belonging to two groups of trap levels. The total trapped charge exceeds 1×1013cm-2. The observed density and energy distribution of these traps are nearly identical in all thermal and deposited oxides investigated, suggesting that the NITs belong to intrinsic defects at the SiO2/SiC interface which are readily formed during oxide deposition or thermal oxidation of 4H-SiC. Using high-resolution electron microscopy combined with nanochemical analysis (electron energy-loss near-edge spectroscopy and energy-filtered transmission electron microscopy) we investigated the SiO2/SiC interface in samples receiving reoxidation and did not find any indication of graphitic regions at or near the SiO2/SiC interface or in the bulk silicon dioxide within a detection limit of 0.7nm. In addition, no amorphous carbon accumulation was observed near the SiO2/SiC interface. The overall results strongly suggest that the NITs near the 4H-SiC conduction band are not related to carbon structures in the SiO2/SiC interlayer.

  1. Low thermal budget for Si and SiGe surface preparation for FD-SOI technology

    NASA Astrophysics Data System (ADS)

    Labrot, M.; Cheynis, F.; Barge, D.; Müller, P.; Juhel, M.

    2016-05-01

    Ultra thin Silicon films of Silicon-on-Insulator technology are metastable and thus cannot be submitted to high temperature treatments that may roughen or disrupt the film during the set of technological steps required for device fabrication. This paper concerns the development of an efficient low temperature cleaning process of Si and SiGe surfaces that enables a subsequent good-quality epitaxy of raised source and drain. For this purpose wet-clean, plasma-clean and several combinations of both are used. We thus propose two effective surface cleaning processes with low thermal budget optimized for FD-SOI technology.

  2. Room Temperature Creep Of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Gyekenyesi, Andrew; Levine, Stanley (Technical Monitor)

    2001-01-01

    During a recent experimental study, time dependent deformation was observed for a damaged Hi-Nicalon reinforced, BN interphase, chemically vapor infiltrated SiC matrix composites subjected to static loading at room temperature. The static load curves resembled primary creep curves. In addition, acoustic emission was monitored during the test and significant AE activity was recorded while maintaining a constant load, which suggested matrix cracking or interfacial sliding. For similar composites with carbon interphases, little or no time dependent deformation was observed. Evidently, exposure of the BN interphase to the ambient environment resulted in a reduction in the interfacial mechanical properties, i.e. interfacial shear strength and/or debond energy. These results were in qualitative agreement with observations made by Eldridge of a reduction in interfacial shear stress with time at room temperature as measured by fiber push-in experiments.

  3. One-dimensional Si nanolines in hydrogenated Si(001)

    NASA Astrophysics Data System (ADS)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  4. U-Mo/Al-Si interaction: Influence of Si concentration

    NASA Astrophysics Data System (ADS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M. C.; Lemoine, P.

    2010-04-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 °C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2Al 20, when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6Mo 4Al 43. For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3(Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2Al 20. On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  5. Polylactides in additive biomanufacturing.

    PubMed

    Poh, Patrina S P; Chhaya, Mohit P; Wunner, Felix M; De-Juan-Pardo, Elena M; Schilling, Arndt F; Schantz, Jan-Thorsten; van Griensven, Martijn; Hutmacher, Dietmar W

    2016-12-15

    New advanced manufacturing technologies under the alias of additive biomanufacturing allow the design and fabrication of a range of products from pre-operative models, cutting guides and medical devices to scaffolds. The process of printing in 3 dimensions of cells, extracellular matrix (ECM) and biomaterials (bioinks, powders, etc.) to generate in vitro and/or in vivo tissue analogue structures has been termed bioprinting. To further advance in additive biomanufacturing, there are many aspects that we can learn from the wider additive manufacturing (AM) industry, which have progressed tremendously since its introduction into the manufacturing sector. First, this review gives an overview of additive manufacturing and both industry and academia efforts in addressing specific challenges in the AM technologies to drive toward AM-enabled industrial revolution. After which, considerations of poly(lactides) as a biomaterial in additive biomanufacturing are discussed. Challenges in wider additive biomanufacturing field are discussed in terms of (a) biomaterials; (b) computer-aided design, engineering and manufacturing; (c) AM and additive biomanufacturing printers hardware; and (d) system integration. Finally, the outlook for additive biomanufacturing was discussed.

  6. Additive Manufactured Product Integrity

    NASA Technical Reports Server (NTRS)

    Waller, Jess; Wells, Doug; James, Steve; Nichols, Charles

    2017-01-01

    NASA is providing key leadership in an international effort linking NASA and non-NASA resources to speed adoption of additive manufacturing (AM) to meet NASA's mission goals. Participants include industry, NASA's space partners, other government agencies, standards organizations and academia. Nondestructive Evaluation (NDE) is identified as a universal need for all aspects of additive manufacturing.

  7. Structural variations of Si1−xCx and their light absorption controllability

    PubMed Central

    2012-01-01

    The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 − xCx. We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 − xCx produced by thermal annealing of the Si-rich Si1 − xCx and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed. PMID:22953733

  8. Seismotectonics and Neotectonics of the Gulfs of Gökova-Kuşadasi-Siǧacik and Surrounding Regions (SW Turkey): Earthquake Mechanisms, Source Rupture Modeling, Tsunami Hazard and Geodynamic Implications

    NASA Astrophysics Data System (ADS)

    Yolsal-Cevikbilen, Seda; Karaoglu, Özgür; Taymaz, Tuncay; Helvaci, Cahit

    2013-04-01

    The mechanical behavior of the continental lithosphere for the Aegean region is one of the foremost interesting geological disputes in earth sciences. The Aegean region provides complex tectonic events which produced a strong heterogeneity in the crust (i.e. large thrusts and exhumation shear zones or extensional detachments) as such in among most continental regions. In order to investigate mechanical reasons of the ongoing lithospheric-scale extension within the region, we must tackle all of the existing kinematic and dynamic agents: (1) roll back of the subduction slab and back arc extension; (2) westward extrusion of the Anatolian micro-plate; (3) block rotations of the Aegean region and western Anatolia; and (4) transtensional transform faults. Furthermore, seismological studies, particularly earthquake source mechanisms and rupture modeling, play important roles on deciphering the ongoing deformation and seismotectonic characteristics of the region. Recently, many moderate earthquakes occurred in the Gulfs of Gökova, Kuşadası, Sıǧacık and surroundings. In the present study, we examined source mechanisms and rupture histories of those earthquakes with Mw > 5.0 in order to retrieve the geometry of active faulting, source characteristics, kinematic and dynamic source parameters and current deformations of the region by using teleseismic body-waveform inversion of long-period P- and SH-waves, and broad-band P-waveforms recorded by GDSN and FDSN stations. We also checked first motion polarities of P- waveforms recorded at regional and teleseismic stations and applied several uncertainty tests to find the error limits of minimum misfit solutions. Inversion results revealed E-W directed normal faulting mechanisms with small amount of left lateral strike slip components in the Gulf of Gökova and NE-SW oriented right lateral strike slip faulting mechanisms in the Gulf of Sıǧacık. Earthquakes mostly have N-S and NW-SE directed T- axes directions which are

  9. Thermal decomposition of silane to form hydrogenated amorphous Si film

    DOEpatents

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  10. Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells

    NASA Astrophysics Data System (ADS)

    Boujdaria, K.; Ridene, S.; Radhia, S. Ben; Zitouni, O.; Bouchriha, H.; Fishman, G.

    2002-09-01

    We study the effects of the pc-pc coupling in intersubband hole optical transitions in SiGe/Si quantum wells for x and z polarizations. We have used a k[middle dot]p model taking into account both the p-like first conduction band and the s-like second conduction band. First, we have found a unitary transformation that block diagonalizes the 14 x14 Hamiltonian (or 12 x12 Hamiltonian) into two 7 x7 (or 6 x6) blocks that are real symmetric in the finite difference formulation. We find that pc-pc interaction plays a minimal role in intersubband optical transition for x and z polarizations. Moreover, our calculations clearly confirm that the pc-pv coupling favors intersubband transitions for an optical polarization parallel to the layer plane (x polarization). In addition, for z polarization, both s-pv and pc-pv interactions play an equal footing role in intervalence band transitions.

  11. Polyimide processing additives

    NASA Technical Reports Server (NTRS)

    Fletcher, James C. (Inventor); Pratt, J. Richard (Inventor); St.clair, Terry L. (Inventor); Stoakley, Diane M. (Inventor); Burks, Harold D. (Inventor)

    1992-01-01

    A process for preparing polyimides having enhanced melt flow properties is described. The process consists of heating a mixture of a high molecular weight poly-(amic acid) or polyimide with a low molecular weight amic acid or imide additive in the range of 0.05 to 15 percent by weight of additive. The polyimide powders so obtained show improved processability, as evidenced by lower melt viscosity by capillary rheometry. Likewise, films prepared from mixtures of polymers with additives show improved processability with earlier onset of stretching by TMA.

  12. Polyimide processing additives

    NASA Technical Reports Server (NTRS)

    Pratt, J. Richard (Inventor); St.clair, Terry L. (Inventor); Stoakley, Diane M. (Inventor); Burks, Harold D. (Inventor)

    1993-01-01

    A process for preparing polyimides having enhanced melt flow properties is described. The process consists of heating a mixture of a high molecular weight poly-(amic acid) or polyimide with a low molecular weight amic acid or imide additive in the range of 0.05 to 15 percent by weight of the additive. The polyimide powders so obtained show improved processability, as evidenced by lower melt viscosity by capillary rheometry. Likewise, films prepared from mixtures of polymers with additives show improved processability with earlier onset of stretching by TMA.

  13. Production of Al-Si-SiCp cast composites by injection of low-energy ball-milled Al-SiCp powder into the melt

    NASA Astrophysics Data System (ADS)

    Ghahremanian, Mohsen; Niroumand, Behzad; Panjepour, Masoud

    2012-02-01

    Al-7wt%Si-10wt%SiCp composite with uniformly distributed reinforcement particles with the average size of about 3 microns was produced by a special compocasting method in which the reinforcement was injected into the melt in the form of particulate Al-SiCp composite powder instead of SiCp. The effects of the reinforcement addition form, the solid fraction of primary alpha-aluminum particles at pouring, and stirring speed on the incorporation of reinforcement particles into the matrix were investigated. Injection of particulate Al-SiCp composite led to improved incorporation and dispersion and reduced size of SiCp. Casting from the semisolid state significantly improved the incorporation of SiCp into the matrix. The optimal solid fraction of primary alpha-aluminum particles to achieve a reasonable combination of reinforcement incorporation and fluidity of the composite slurry was recognized to be about 0.1. The incorporation of SiCp was improved by increasing the stirring speed up to 500 rpm and then gradually decreased.

  14. High performance amorphous-Si@SiOx/C composite anode materials for Li-ion batteries derived from ball-milling and in situ carbonization

    NASA Astrophysics Data System (ADS)

    Wang, Dingsheng; Gao, Mingxia; Pan, Hongge; Wang, Junhua; Liu, Yongfeng

    2014-06-01

    Amorphous-Si@SiOx/C composites with amorphous Si particles as core and coated with a double layer of SiOx and carbon are prepared by ball-milling crystal micron-sized silicon powders and carbonization of the citric acid intruded in the ball-milled Si. Different ratios of Si to citric acid are used in order to optimize the electrochemical performance. It is found that SiOx exists naturally at the surfaces of raw Si particles and its content increases to ca. 24 wt.% after ball-milling. With an optimized Si to citric acid weight ratio of 1/2.5, corresponding to 8.4 wt.% C in the composite, a thin carbon layer is coated on the surfaces of a-Si@SiOx particles, moreover, floc-like carbon also forms and connects the carbon coated a-Si@SiOx particles. The composite provides a capacity of 1450 mA h g-1 after 100 cycles at a current density of 100 mA g1, and a capacity of 1230 mA h g-1 after 100 cycles at 500 mA g1 as anode material for lithium-ion batteries. Effects of ball-milling and the addition of citric acid on the microstructure and electrochemical properties of the composites are revealed and the mechanism of the improvement in electrochemical properties is discussed.

  15. Helimagnetic order in bulk MnSi and CoSi/MnSi superlattices

    NASA Astrophysics Data System (ADS)

    Loh, G. C.; Khoo, K. H.; Gan, C. K.

    2017-01-01

    Skyrmions are nanoscopic whirls of spins that reside in chiral magnets. It is only fairly recent that a plethora of applications for these quasiparticles emerges, especially in data storage. On the other hand, spin spirals are the periodic analogs of skyrmions, and are equally imperative in the course of exploration to enhance our understanding of helimagnetism. In this study, a new infrastructure based on the B20 compound, MnSi is propounded as a hosting material for spin spirals; alternating thin layers of CoSi and MnSi in the superlattice form provides a facile way of varying the properties of the spin spirals across a continuum. Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk MnSi, MnSi film, and the CoSi/MnSi superlattice is investigated. Spin dispersion plots as a function of propagation vectors show that the spiral size changes in the presence of CoSi - we find that the size of the spiral is reduced in the superlattice with thin CoSi layers (CoSi:MnSi=1:1 thickness ratio), whilst at a larger CoSi:MnSi=2:1 thickness ratio, the material behaves as a ferromagnet. In a similar fashion, the spin moment and orbital occupancy depend significantly on the thickness of the CoSi layers. However, the exchange interaction between Mn atoms appears to be generally impervious to the presence of CoSi. Succinctly, the CoSi/MnSi superlattice could be an excellent functional material in data storage applications.

  16. Thermoelectric properties of BaSi2, SrSi2, and LaSi

    NASA Astrophysics Data System (ADS)

    Hashimoto, Kohsuke; Kurosaki, Ken; Imamura, Yasushi; Muta, Hiroaki; Yamanaka, Shinsuke

    2007-09-01

    We studied the thermoelectric properties of BaSi2, SrSi2, and LaSi. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The power factor (S2/ρ) is quite low (below 10-5 Wm-1 K-2 over the whole temperature range) for BaSi2 and LaSi, while relatively high (1.19×10-3 Wm-1 K-2 at 331 K) for SrSi2. BaSi2 exhibits quite low κ. The κ values at room temperature are 1.56, 5.25, and 6.71 Wm-1 K-1 for BaSi2, SrSi2, and LaSi, respectively. The maximum values of the dimensionless figure of merit, ZT =S2T/ρ/κ, are 0.01 at 954 K for BaSi2, 0.09 at 417 K for SrSi2, and 0.002 at 957 K for LaSi.

  17. The Effect of Silicon and Aluminum Additions on the Oxidation Resistance of Lean Chromium Stainless Steels

    SciTech Connect

    Dunning, J.S.; Alman, D.E.; Rawers, J.C.

    2001-09-01

    The effect of Si and Al additions on the oxidation of lean chromium austenitic stainless steels has been studied. A baseline composition of Fe-16Cr-16Ni-2Mn-1Mo was selected to allow combined Si and Al additions of up to 5 wt. pct. in a fully austenitic alloy. The baseline composition was selected using a net Cr equivalent equation to predict the onset of G-ferrite formation in austenite. Cyclic oxidation tests in air for 1000 hours were carried out on alloys with Si only or combined Si and Al additions in the temperature range 700 C to 800 C. Oxidation resistance of alloys with Si only additions were outstanding, particularly at 800 C. It was evident that different rate controlling mechanisms for oxidation were operative at 700 C and 800 C in the Si alloys. In addition, Si alloys pre-oxidized at 800 C, showed a zero weight gain in subsequent testing for 1000 hours at 700 C. The rate controlling mechanism in alloys with combined Si and Al addition for oxidation at 800 C was also different than alloys with Si only. SEM and ESCA analysis of the oxide films and base material at the oxide/base metal interface were conducted to study potential rate controlling mechanisms.

  18. Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

    PubMed Central

    Yamasaka, Shuto; Nakamura, Yoshiaki; Ueda, Tomohiro; Takeuchi, Shotaro; Sakai, Akira

    2015-01-01

    Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal conductivities than those of the conventional nanostructured SiGe bulk alloys, despite the stacked structures having a smaller Ge fraction. This came from the large thermal resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon scattering can be controlled by the Ge ND structure, which was independent of Si layer structure for carrier transport. These results demonstrate the effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources, opening up a route for the realisation of Si-based thermoelectric materials. PMID:26434678

  19. Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials.

    PubMed

    Yamasaka, Shuto; Nakamura, Yoshiaki; Ueda, Tomohiro; Takeuchi, Shotaro; Sakai, Akira

    2015-10-05

    Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal conductivities than those of the conventional nanostructured SiGe bulk alloys, despite the stacked structures having a smaller Ge fraction. This came from the large thermal resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon scattering can be controlled by the Ge ND structure, which was independent of Si layer structure for carrier transport. These results demonstrate the effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources, opening up a route for the realisation of Si-based thermoelectric materials.

  20. Food Additives and Hyperkinesis

    ERIC Educational Resources Information Center

    Wender, Ester H.

    1977-01-01

    The hypothesis that food additives are causally associated with hyperkinesis and learning disabilities in children is reviewed, and available data are summarized. Available from: American Medical Association 535 North Dearborn Street Chicago, Illinois 60610. (JG)

  1. Smog control fuel additives

    SciTech Connect

    Lundby, W.

    1993-06-29

    A method is described of controlling, reducing or eliminating, ozone and related smog resulting from photochemical reactions between ozone and automotive or industrial gases comprising the addition of iodine or compounds of iodine to hydrocarbon-base fuels prior to or during combustion in an amount of about 1 part iodine per 240 to 10,000,000 parts fuel, by weight, to be accomplished by: (a) the addition of these inhibitors during or after the refining or manufacturing process of liquid fuels; (b) the production of these inhibitors for addition into fuel tanks, such as automotive or industrial tanks; or (c) the addition of these inhibitors into combustion chambers of equipment utilizing solid fuels for the purpose of reducing ozone.

  2. Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

    NASA Astrophysics Data System (ADS)

    Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

    2017-03-01

    We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

  3. FeSi diffusion barriers in Fe/FeSi/Si/FeSi/Fe multilayers and oscillatory antiferromagnetic exchange coupling

    NASA Astrophysics Data System (ADS)

    Stromberg, F.; Bedanta, S.; Antoniak, C.; Keune, W.; Wende, H.

    2008-10-01

    We study the diffusion of 57Fe probe atoms in Fe/FeSi/Si/FeSi/Fe multilayers on Si(111) prepared by molecular beam epitaxy by means of 57Fe conversion electron Mössbauer spectroscopy (CEMS). We demonstrate that the application of FeSi boundary layers successfully inhibits the diffusion of 57Fe into the Si layer. The critical thickness for the complete prevention of Fe diffusion takes place at a nominal FeSi thickness of tFeSi = 10-12 Å, which was confirmed by the evolution of the isomer shift δ of the crucial CEM subspectrum. The formation of the slightly defective c-FeSi phase for thicker FeSi boundary layers (~20 Å) was confirmed by CEMS and reflection high-energy electron diffraction (RHEED). Ferromagnetic resonance (FMR) shows that, for tFeSi = 0-14 Å, the Fe layers in all samples are antiferromagnetically coupled and we observe an oscillatory antiferromagnetic coupling strength with FMR and superconducting quantum interference device (SQUID) magnetometry for varying FeSi thickness with a period of ~6 Å.

  4. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  5. Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Hebsur, Mohan G.

    2000-01-01

    Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

  6. Thermal stability of SrTiO{sub 3}/SiO{sub 2}/Si Interfaces at Intermediate Oxygen Pressures

    SciTech Connect

    Yong, G. J.; Kolagani, Rajeswari M.; Adhikari, S.; Vanderlinde, W.; Liang, Y.; Muramatsu, K.; Friedrich, S.

    2010-08-15

    The thermal stability of epitaxial SrTiO{sub 3} thin films grown by molecular-beam epitaxy on Si (001) has been studied using x-ray diffraction (XRD), optical microscopy (OM), scanning electron microscopy (SEM), and thermodynamic calculations. Our studies focus on the stability of the SrTiO{sub 3}/Si structures under the conditions typically employed in the pulse laser deposition (PLD) growth of complex metal oxide heteroepitaxy on Si. We observe additional Bragg peaks in thermally treated SrTiO{sub 3} buffered Si structures, corresponding to possibly TiSi{sub 2} and/or SrSiO{sub 3}, reaction products which are consistent with the reaction schemes we propose. In addition, OM and SEM reveal microstructures that are not readily accounted for solely by the solid state reactions as put forth by previous workers but can be reasonably explained by our proposed reaction schemes. Using our observations and thermodynamic analysis, we argue that reactions involving the gaseous species SiO(g), the reactivity of which has not been previously considered in this system, are important. We attribute the onset of degradation of the SrTiO{sub 3} film at high temperatures, to the circular void forming reaction Si(s)+SiO{sub 2}(s){yields}2SiO(g) at the interface and suggest that the reactions considered by previous workers involving all solid state reactants occurs only at the conclusion of degradation. Our results points to the need for keeping the PLD temperature as low as possible to minimize the production of reactive SiO(g) in avoiding the deleterious reactions.

  7. Water hyacinth a potential source for value addition: An overview.

    PubMed

    Sindhu, Raveendran; Binod, Parameswaran; Pandey, Ashok; Madhavan, Aravind; Alphonsa, Jose Anju; Vivek, Narisetty; Gnansounou, Edgard; Castro, Eulogio; Faraco, Vincenza

    2017-04-01

    Water hyacinth a fresh water aquatic plant is considered as a noxious weed in many parts of the world since it grows very fast and depletes nutrients and oxygen from water bodies adversely affecting the growth of both plants and animals. Hence conversion of this problematic weed to value added chemicals and fuels helps in the self-sustainability especially for developing countries. The present review discusses the various value added products and fuels which can be produced from water hyacinth, the recent research and developmental activities on the bioconversion of water hyacinth for the production of fuels and value added products as well as its possibilities and challenges in commercialization.

  8. 17 CFR 38.1201 - Additional sources for compliance.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... designing a futures contract, the designated contract market should conduct market research so that the... contract markets should derive a quantitative estimate of the deliverable supplies for the delivery...

  9. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... fall within an exemption to the Act's openness requirement and the Commission also has determined that... availability of NRC records under the Freedom of Information Act and Privacy Act of 1974 may be obtained...

  10. 32 CFR 2001.24 - Additional requirements.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 32 National Defense 6 2013-07-01 2013-07-01 false Additional requirements. 2001.24 Section 2001.24... Markings § 2001.24 Additional requirements. (a) Marking prohibitions. Markings other than “Top Secret... list for NSI portions.” The source list, as described in § 2001.22(c)(1)(ii), shall include...

  11. 32 CFR 2001.24 - Additional requirements.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 32 National Defense 6 2014-07-01 2014-07-01 false Additional requirements. 2001.24 Section 2001.24... Markings § 2001.24 Additional requirements. (a) Marking prohibitions. Markings other than “Top Secret... list for NSI portions.” The source list, as described in § 2001.22(c)(1)(ii), shall include...

  12. 32 CFR 2001.24 - Additional requirements.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 32 National Defense 6 2012-07-01 2012-07-01 false Additional requirements. 2001.24 Section 2001.24... Markings § 2001.24 Additional requirements. (a) Marking prohibitions. Markings other than “Top Secret... list for NSI portions.” The source list, as described in § 2001.22(c)(1)(ii), shall include...

  13. 32 CFR 2001.24 - Additional requirements.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 32 National Defense 6 2010-07-01 2010-07-01 false Additional requirements. 2001.24 Section 2001.24... Markings § 2001.24 Additional requirements. (a) Marking prohibitions. Markings other than “Top Secret... list for NSI portions.” The source list, as described in § 2001.22(c)(1)(ii), shall include...

  14. SiPMs characterization and selection for the DUNE far detector photon detection system

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Maricic, J.

    2016-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

  15. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Devine, R.A.B.; Mathiot, D.; Warren, W.L.; Fleetwood, D.M.

    1993-12-31

    Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

  16. Positron diffusion in Si

    SciTech Connect

    Nielsen, B.; Lynn, K.G.; Vehanen, A.; Schultz, P.J.

    1985-06-01

    Positron diffusion in Si(100) and Si(111) has been studied using a variable energy positron beam. The positron diffusion coefficient is found to be D/sub +/ = 2.7 +- 0.3 cm/sup 2//sec using a Makhov-type positron implantation profile, which is demonstrated to fit the data more reliably than the more commonly applied exponential profile. The diffusion related parameter, E/sub 0/, which results from the exponential profile, is found to be 4.2 +- 0.2 keV, significantly longer than previously reported values. A drastic reduction in E/sub 0/ is found after annealing the sample at 1300 K, showing that previously reported low values of E/sub 0/ are probably associated with the thermal history of the sample.

  17. Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures

    DTIC Science & Technology

    2014-01-01

    by high-resolution X-ray 387 diffraction. In Characterization of Semiconductor Heterostructures 388and Nanostructures , Lamberti C. (Ed.), pp. 93–132...combined advantage of Si semiconductor 29 technology and band gap engineering (Kittler et al., 1995). 30 Inside the Si/SiGe/Si heterostructure , SiGe is...and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures Report Title We demonstrate the combined use of large area

  18. Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift

    SciTech Connect

    Zelenina, A. Hiller, D.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; Trouillet, V.; Bruns, M.; Mirabella, S.; Löper, P.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, C Estradé, S. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, C CCiT, Scientific and Technical Centers, Universitat de Barcelona, C and others

    2013-11-14

    Superlattices of Si{sub 3}N{sub 4} and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiN{sub x} layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si{sub 3}N{sub 4} matrix remains amorphous even after annealing at 1200 °C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO{sub 2} matrix. Also, a systematic peak shift was not found. The SiN{sub x}/Si{sub 3}N{sub 4} superlattices showed photoluminescence peak positions in the range of 540–660 nm (2.3–1.9 eV), thus quite similar to the bulk Si{sub 3}N{sub 4} film having peak position at 577 nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si{sub 3}N{sub 4} are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si{sub 3}N{sub 4} surrounding matrix luminescence.

  19. Short-range order in amorphous SiO{sub x} by x ray photoelectron spectroscopy

    SciTech Connect

    Novikov, Yu. N.; Gritsenko, V. A.

    2011-07-01

    The Si 2p x ray photoelectron spectra of SiO{sub x} with a different composition of 0 {<=} x {<=} 2 have been studied experimentally and theoretically. The SiO{sub x} films were prepared by low-pressure chemical vapor deposition from SiH{sub 4} and N{sub 2}O source at 750 deg. C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiO{sub x}.

  20. Si in GaN -- On the nature of the background donor

    SciTech Connect

    Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W.

    1996-08-01

    A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

  1. Brazing SiC/SiC Composites to Metals

    NASA Technical Reports Server (NTRS)

    Steffier, Wayne S.

    2004-01-01

    Experiments have shown that active brazing alloys (ABAs) can be used to join SiC/SiC composite materials to metals, with bond strengths sufficient for some structural applications. The SiC/SiC composite coupons used in the experiments were made from polymerbased SiC fiber preforms that were chemical-vapor-infiltrated with SiC to form SiC matrices. Some of the metal coupons used in the experiments were made from 304 stainless steel; others were made from oxygen-free, high-conductivity copper. Three ABAs were chosen for the experiments: two were chosen randomly from among a number of ABAs that were on hand at the time; the third ABA was chosen because its titanium content (1.25 percent) is less than those of the other two ABAs (1.75 and 4.5 percent, respectively) and it was desired to evaluate the effect of reducing the titanium content, as described below. The characteristics of ABAs that are considered to be beneficial for the purpose of joining SiC/SiC to metal include wettability, reactivity, and adhesion to SiC-based ceramics. Prior to further development, it was verified that the three chosen ABAs have these characteristics. For each ABA, suitable vacuum brazing process conditions were established empirically by producing a series of (SiC/SiC)/ABA wetting samples. These samples were then sectioned and subjected to scanning electron microscopy (SEM) and energy-dispersive x-ray spectrometry (EDS) for analysis of their microstructures and compositions. Specimens for destructive mechanical tests were fabricated by brazing of lap joints between SiC/SiC coupons 1/8-in. (.3.2- mm) thick and, variously, stainless steel or copper tabs. The results of destructive mechanical tests and the SEM/EDS analysis were used to guide the development of a viable method of brazing the affected materials.

  2. Highly sensitive NIR PtSi/Si-nanostructure detectors

    NASA Astrophysics Data System (ADS)

    Li, Hua-gao; Guo, Pei; Yuan, An-bo; Long, Fei; Li, Rui-zhi; Li, Ping; Li, Yi

    2016-10-01

    We report a high external quantum efficiency (EQE) photodiode detector with PtSi/Si-nanostructures. Black silicon nanostructures were fabricated by metal-assist chemical etching (MCE), a 2 nm Pt layer was subsequently deposited on black silicon surface by DC magnetron sputtering system, and PtSi/Si-nanostructures were formed in vacuum annealing at 450 oC for 5 min. As the PtSi/Si-nanostructures presented a spiky shape, the absorption of incident light was remarkably enhanced for the repeat reflection and absorption. The breakdown voltage, dark current, threshold voltage and responsivity of the device were investigated to evaluate the performance of the PtSi/Si-nanostructures detector. The threshold voltage and dark currents of the PtSi/Si-nanostructure photodiode tends to be slightly higher than those of the standard diodes. The breakdown voltage remarkably was reduced because of existing avalanche breakdown in PtSi/Si-nanostructures. However, the photodiodes had high response at room temperature in near infrared region. At -5 V reverse bias voltage, the responsivity was 0.72 A/W in 1064 nm wavelength, and the EQE was 83.9%. By increasing the reverse bias voltage, the responsivity increased. At -60 V reverse bias voltage, the responsivity was 3.5 A/W, and the EQE was 407.5%, which means the quantum efficiency of PtSi/Si-nanostructure photodiodes was about 10 times higher than that of a standard diode. Future research includes how to apply this technology to enhance the NIR sensitivity of image sensors, such as Charge Coupled Devices (CCD).

  3. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    NASA Astrophysics Data System (ADS)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  4. Group Sparse Additive Models

    PubMed Central

    Yin, Junming; Chen, Xi; Xing, Eric P.

    2016-01-01

    We consider the problem of sparse variable selection in nonparametric additive models, with the prior knowledge of the structure among the covariates to encourage those variables within a group to be selected jointly. Previous works either study the group sparsity in the parametric setting (e.g., group lasso), or address the problem in the nonparametric setting without exploiting the structural information (e.g., sparse additive models). In this paper, we present a new method, called group sparse additive models (GroupSpAM), which can handle group sparsity in additive models. We generalize the ℓ1/ℓ2 norm to Hilbert spaces as the sparsity-inducing penalty in GroupSpAM. Moreover, we derive a novel thresholding condition for identifying the functional sparsity at the group level, and propose an efficient block coordinate descent algorithm for constructing the estimate. We demonstrate by simulation that GroupSpAM substantially outperforms the competing methods in terms of support recovery and prediction accuracy in additive models, and also conduct a comparative experiment on a real breast cancer dataset.

  5. Additive Manufacturing Infrared Inspection

    NASA Technical Reports Server (NTRS)

    Gaddy, Darrell

    2014-01-01

    Additive manufacturing is a rapid prototyping technology that allows parts to be built in a series of thin layers from plastic, ceramics, and metallics. Metallic additive manufacturing is an emerging form of rapid prototyping that allows complex structures to be built using various metallic powders. Significant time and cost savings have also been observed using the metallic additive manufacturing compared with traditional techniques. Development of the metallic additive manufacturing technology has advanced significantly over the last decade, although many of the techniques to inspect parts made from these processes have not advanced significantly or have limitations. Several external geometry inspection techniques exist such as Coordinate Measurement Machines (CMM), Laser Scanners, Structured Light Scanning Systems, or even traditional calipers and gages. All of the aforementioned techniques are limited to external geometry and contours or must use a contact probe to inspect limited internal dimensions. This presentation will document the development of a process for real-time dimensional inspection technique and digital quality record of the additive manufacturing process using Infrared camera imaging and processing techniques.

  6. Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes

    SciTech Connect

    FLEMING,JAMES G.; CHOW,KAI-CHEUNG; LIN,SHAWN-YU

    2000-04-06

    Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

  7. Effect of a grain refiner cum modifier on mechanical properties of Al-7Si and Al-11Si alloys

    NASA Astrophysics Data System (ADS)

    Jigajinni, S. M.; Venkateswarlu, K.; Kori, S. A.

    2013-03-01

    This study evaluates the influence of grain refiners/modifiers on the mechanical properties of the Al-7Si and Al-11Si alloys with an experiment of quantitative and qualitative correlations with the microstructure. Modification of Al-Si alloys with strontium additions and grain refinement with Al-Ti, Al-B and Al-T-B master alloy additions are demonstrated to be efficient on Al-Si alloys. A single master alloy with combined additions of Sr and Ti and/or B was prepared and the microstructure and mechanical properties were studied. The results show that boron rich (Al-3B-Sr and Al-1Ti-3B-Sr) master alloys are more efficient than Ti rich (Al-3Ti-Sr and Al-5Ti-1B-Sr) master alloys considering their combined grain refinement and modification effect on Al-7Si and Al-11Si alloys. However, the presence of Sr does not influence the grain refinement. Similarly, presence of grain refiner does not influence the modification of eutectic Si.

  8. Phenylethynyl Containing Reactive Additives

    NASA Technical Reports Server (NTRS)

    Connell, John W. (Inventor); Smith, Joseph G., Jr. (Inventor); Hergenrother, Paul M. (Inventor)

    2002-01-01

    Phenylethynyl containing reactive additives were prepared from aromatic diamine, containing phenylethvnvl groups and various ratios of phthalic anhydride and 4-phenylethynviphthalic anhydride in glacial acetic acid to form the imide in one step or in N-methyl-2-pvrrolidinone to form the amide acid intermediate. The reactive additives were mixed in various amounts (10% to 90%) with oligomers containing either terminal or pendent phenylethynyl groups (or both) to reduce the melt viscosity and thereby enhance processability. Upon thermal cure, the additives react and become chemically incorporated into the matrix and effect an increase in crosslink density relative to that of the host resin. This resultant increase in crosslink density has advantageous consequences on the cured resin properties such as higher glass transition temperature and higher modulus as compared to that of the host resin.

  9. Fused Lasso Additive Model

    PubMed Central

    Petersen, Ashley; Witten, Daniela; Simon, Noah

    2016-01-01

    We consider the problem of predicting an outcome variable using p covariates that are measured on n independent observations, in a setting in which additive, flexible, and interpretable fits are desired. We propose the fused lasso additive model (FLAM), in which each additive function is estimated to be piecewise constant with a small number of adaptively-chosen knots. FLAM is the solution to a convex optimization problem, for which a simple algorithm with guaranteed convergence to a global optimum is provided. FLAM is shown to be consistent in high dimensions, and an unbiased estimator of its degrees of freedom is proposed. We evaluate the performance of FLAM in a simulation study and on two data sets. Supplemental materials are available online, and the R package flam is available on CRAN. PMID:28239246

  10. Phenylethynyl Containing Reactive Additives

    NASA Technical Reports Server (NTRS)

    Connell, John W. (Inventor); Smith, Joseph G., Jr. (Inventor); Hergenrother, Paul M. (Inventor)

    2002-01-01

    Phenylethynyl containing reactive additives were prepared from aromatic diamines containing phenylethynyl groups and various ratios of phthalic anhydride and 4-phenylethynylphthalic anhydride in glacial acetic acid to form the imide in one step or in N-methyl-2-pyrrolidi none to form the amide acid intermediate. The reactive additives were mixed in various amounts (10% to 90%) with oligomers containing either terminal or pendent phenylethynyl groups (or both) to reduce the melt viscosity and thereby enhance processability. Upon thermal cure, the additives react and become chemically incorporated into the matrix and effect an increase in crosslink density relative to that of the host resin. This resultant increase in crosslink density has advantageous consequences on the cured resin properties such as higher glass transition temperature and higher modulus as compared to that of the host resin.

  11. Additives in plastics.

    PubMed Central

    Deanin, R D

    1975-01-01

    The polymers used in plastics are generally harmless. However, they are rarely used in pure form. In almost all commercial plastics, they are "compounded" with monomeric ingredients to improve their processing and end-use performance. In order of total volume used, these monomeric additives may be classified as follows: reinforcing fibers, fillers, and coupling agents; plasticizers; colorants; stabilizers (halogen stabilizers, antioxidants, ultraviolet absorbers, and biological preservatives); processing aids (lubricants, others, and flow controls); flame retardants, peroxides; and antistats. Some information is already available, and much more is needed, on potential toxicity and safe handling of these additives during processing and manufacture of plastics products. PMID:1175566

  12. Additives in plastics.

    PubMed

    Deanin, R D

    1975-06-01

    The polymers used in plastics are generally harmless. However, they are rarely used in pure form. In almost all commercial plastics, they are "compounded" with monomeric ingredients to improve their processing and end-use performance. In order of total volume used, these monomeric additives may be classified as follows: reinforcing fibers, fillers, and coupling agents; plasticizers; colorants; stabilizers (halogen stabilizers, antioxidants, ultraviolet absorbers, and biological preservatives); processing aids (lubricants, others, and flow controls); flame retardants, peroxides; and antistats. Some information is already available, and much more is needed, on potential toxicity and safe handling of these additives during processing and manufacture of plastics products.

  13. Biobased lubricant additives

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Fully biobased lubricants are those formulated using all biobased ingredients, i.e. biobased base oils and biobased additives. Such formulations provide the maximum environmental, safety, and economic benefits expected from a biobased product. Currently, there are a number of biobased base oils that...

  14. More Than Additional Space...

    ERIC Educational Resources Information Center

    CEFP Journal, 1973

    1973-01-01

    A much needed addition to the Jamestown Elementary School turned out to be more than an expansion of walls for more space. A new educational program, a limited budget, and a short time line were tackled on a team approach basis and were successfully resolved. (Author)

  15. .Si≡Si3 defect at thermally grown (111)Si/Si3N4 interfaces

    NASA Astrophysics Data System (ADS)

    Stesmans, A.; van Gorp, G.

    1995-09-01

    Electron-spin resonance on various dehydrogenated (111)Si/(oxy)nitride structures, thermally grown at 1000-1150 °C in NH3, reveals the presence of two defects. The major one, called PbN, is identified as a Si dangling bond (.Si≡Si3) at the (111)Si/nitride interface aligned perpendicular to the interface; x-ray photoelectron spectroscopy actually shows that the in situ removal of the native Si oxide prior to nitridation is a prerequisite to obtaining stoichiometric Si3N4 films. The identification is based on strong similarities with the Pb defect at the (111)Si/SiO2 interface, such as the g matrix, the location at the interface, and linewidth anisotropy. This observation of the .Si≡Si3 defect at a natural Si/solid interface other than the Si/SiO2 one confirms Pb as a prototype dangling-bond center, its salient properties being set by the underside Si matrix-not by the overlaying insulator. Yet, secondary ESR signatures do differ as the large interface strain, resulting from the greater rigidity of the (oxy)nitrides as compared to SiO2 films, causes a slight perturbation of the Pb(N) symmetry, thereby lifting its C3v symmetry. This is born out at 4.3 K by specific distortions of the PbN line shape. Upon increasing temperature, the perturbation of the defect's symmetry is smoothed due to thermally activated averaging over the various defect distortions. The properties of the Pb and PbN defects at higher temperatures become largely identical. Comparison of the extracted unresolved 14N PbN and 17O Pb hf broadenings shows that their relative strengths comply with the known isotopic properties. A second defect, the intrinsic K center (.Si≡N3), with isotropic g=2.0028+/-0.0001, is observed only in stoichiometric Si3N4 films.

  16. Influence of impurity elements on the nucleation and growth of Si in high purity melt-spun Al-Si-based alloys

    NASA Astrophysics Data System (ADS)

    Li, J. H.; Zarif, M. Z.; Dehm, G.; Schumacher, P.

    2012-11-01

    The nucleation and growth of Si has been investigated by TEM in a series of high purity melt spun Al-5Si (wt%)-based alloys with a trace addition of Fe and Sr. In the as-melt-spun condition, some twinned Si particles were found to form directly from the liquid along the grain boundary. The addition of Sr into Al-5Si-based alloys promotes the twinning of Si particles on the grain boundary and the formation of Si precipitates in the α-Al matrix. The majority of plate-shaped and truncated pyramid-shaped Si precipitates were also found to nucleate and grow along {111}α-Al planes from supersaturated solid solution in the α-Al matrix. In contrast, controlled slow cooling decreased the amount of Si precipitates, while the size of the Si precipitates increased. The orientation relationship between these Si precipitates and the α-Al matrix still remained cube to cube. The β-Al5FeSi intermetallic was also observed, depending on subsequent controlled cooling.

  17. Optically active zwitterionic lambda(5)Si,lambda(5)Si'-disilicates: syntheses, crystal structures, and behavior in aqueous solution.

    PubMed

    Theis, Bastian; Burschka, Christian; Tacke, Reinhold

    2008-01-01

    The zwitterionic lambda(5)Si,lambda(5)Si'-disilicates 1-8 were synthesized and characterized by solid-state and solution NMR spectroscopy. In addition, compounds 26 H(2)O, 32 CH(3)CN, 45/2 CH(3)CN, 6CH(3)OH, 7, and 8CH(3)OHCH(3)CN were studied by single-crystal X-ray diffraction. The optically active (Delta,Delta,R,R,R,R)-configured compounds 1-8 contain two pentacoordinate (formally negatively charged) silicon atoms and two tetracoordinate (formally positively charged) nitrogen atoms. One (ammonio)alkyl group is bound to each of the two silicon centers, and two tetradentate (R,R)-tartrato(4-) ligands bridge the silicon atoms. Although these lambda(5)Si,lambda(5)Si'-disilicates contain SiO(4)C skeletons, some of them display a remarkable stability in aqueous solution as shown by NMR spectroscopy and ESI mass spectrometry.

  18. Structural and optical characterization of pure Si-rich nitride thin films

    PubMed Central

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase. PMID:23324447

  19. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}–embedded Si nanocrystals

    SciTech Connect

    Hiller, D. Zelenina, A.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B.; Estradé, S.; Schnabel, M.; Weiss, C.; Janz, S.

    2014-05-28

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  20. Vinyl capped addition polyimides

    NASA Technical Reports Server (NTRS)

    Vannucci, Raymond D. (Inventor); Malarik, Diane C. (Inventor); Delvigs, Peter (Inventor)

    1991-01-01

    Polyimide resins (PMR) are generally useful where high strength and temperature capabilities are required (at temperatures up to about 700 F). Polyimide resins are particularly useful in applications such as jet engine compressor components, for example, blades, vanes, air seals, air splitters, and engine casing parts. Aromatic vinyl capped addition polyimides are obtained by reacting a diamine, an ester of tetracarboxylic acid, and an aromatic vinyl compound. Low void materials with improved oxidative stability when exposed to 700 F air may be fabricated as fiber reinforced high molecular weight capped polyimide composites. The aromatic vinyl capped polyimides are provided with a more aromatic nature and are more thermally stable than highly aliphatic, norbornenyl-type end-capped polyimides employed in PMR resins. The substitution of aromatic vinyl end-caps for norbornenyl end-caps in addition polyimides results in polymers with improved oxidative stability.