Science.gov

Sample records for additive si source

  1. Development of wide band gap p- a-SiOxCy:H using additional trimethylboron as carbon source gas

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Won; Sichanugrist, Porponth; Janthong, Bancha; Khan, Muhammad Ajmal; Niikura, Chisato; Konagai, Makoto

    2016-07-01

    We report p-type a-SiOxCy:H thin films which were fabricated by introducing additional Trimethylboron (TMB, B(CH3)3) doping gas into conventional standard p-type a-SiOx:H films. The TMB addition into the condition of p-a-SiOx:H improved optical bandgap from 2.14 to 2.20 eV without deterioration of electrical conductivity, which is promising for p-type window layer of thin film solar cells. The suggested p-a-SiOxCy:H films were applied in amorphous silicon solar cells and we found an increase of quantum efficiency at short wavelength regions due to wide bandgap of the new p-layer, and thus efficiency improvement from 10.4 to 10.7% was demonstrated in a-Si:H solar cell by employing the p-a-SiOxCy:H film. In case of a-SiOx:H cell, high open circuit voltage of 1.01 V was confirmed by using the suggested the p-a-SiOxCy:H film as a window layer. This new p-layer can be highly promising as a wide bandgap window layer to improve the performance of thin film silicon solar cells. [Figure not available: see fulltext.

  2. B Removal by Zr Addition in Electromagnetic Solidification Refinement of Si with Si-Al Melt

    NASA Astrophysics Data System (ADS)

    Lei, Yun; Ma, Wenhui; Sun, Luen; Dai, Yongnian; Morita, Kazuki

    2016-02-01

    This study investigated a new process of enhancing B removal by adding small amounts of Zr in the electromagnetic solidification refinement of Si with Si-Al melt. B in Si was removed by as much as 97.2 pct by adding less than 1057 ppma Zr, and the added Zr was removed by as much as 99.7 pct. In addition, Zr is more effective in enhancing B removal than Ti in the same electromagnetic solidification refining process.

  3. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source

    NASA Astrophysics Data System (ADS)

    Meng, Erchao; Ueki, Akiko; Meng, Xiang; Suzuki, Hiroaki; Itahara, Hiroshi; Tatsuoka, Hirokazu

    2016-08-01

    Si nanosheets connected to Si nanowires were synthesized using a MnCl2/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH4 or SiCl4. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  4. Dielectric behavior of Cu—Zn ferrites with Si additive

    NASA Astrophysics Data System (ADS)

    Uzma, G.

    2014-05-01

    Since ferrites are highly sensitive to the additives present in or added to them, extensive work, to improve the properties of basic ferrites, has been carried out on these aspects. The present paper reports the effects of composition, frequency, and temperature on the dielectric behavior of a series of CuxZn1—xFe2O4 ferrite samples prepared by the usual ceramic technique. In order to improve the properties of the samples, low cost Fe2O3 having 0.5 wt.% Si as an additive is selected to introduce into the system. The dielectric constant increases by increasing the Cu content, as the electron exchange of Cu2+ <=> Cu+ is responsible for the conduction and the polarization. However, the addition of Si could decrease the dielectric constant as it suppresses the ceramic grain growth and promotes the quality factor at higher frequencies. Dielectric constant ɛ' and loss tangent tan δ of the mixed Cu—Zn ferrite decrease with increasing frequency, attributed to the Maxwell—Wagner polarization, which increases as the temperature increases.

  5. Effect of Si addition on AC and DC magnetic properties of (Fe-P)-Si alloy

    NASA Astrophysics Data System (ADS)

    Gautam, Ravi; Prabhu, D.; Chandrasekaran, V.; Gopalan, R.; Sundararajan, G.

    2016-05-01

    We report a new (Fe-P)-Si based alloy with relatively high induction (1.8-1.9 T), low coercivity (< 80 A/m), high resistivity (˜38 μΩ cm) and low core loss (217 W/kg @ 1 T/1 kHz) comparable to the commercially available M530-50 A5 Si-steel. The attractive magnetic and electrical properties are attributed to i) the two phase microstructure of fine nano precipitates of Fe3P dispersed in α-Fe matrix achieved by a two-step heat-treatment process and ii) Si addition enhancing the resistivity of the α-Fe matrix phase. As the alloy processing is by conventional wrought metallurgy method, it has the potential for large scale production.

  6. Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode.

    PubMed

    Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia

    2015-09-01

    Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.

  7. Two New SiO Maser Sources in High-Mass Star-forming Regions

    NASA Astrophysics Data System (ADS)

    Cho, Se-Hyung; Yun, Youngjoo; Kim, Jaeheon; Liu, Tie; Kim, Kee-Tae; Choi, Minho

    2016-08-01

    Silicon monoxide (SiO) masers are rare in star-forming regions, with the exception of five known SiO maser sources. However, we detected two new SiO maser sources from infrared-loud clumps of the high-mass star-forming regions G19.61‑0.23 and G75.78+0.34. High angular resolution observations toward G19.61‑0.23 suggest that the deeply embedded young stellar object (YSO) of SMA1 is powering the SiO masers. In addition, the SiO v = 1, J = 1 \\to 0 line shows four spike features, while the v = 2 maser shows combined features of one spike and broad wing components, implying energetic activities of the YSO of SMA1 in the G19.61‑0.23 hot molecular core. The SiO v = 0, J = 2 \\to 1 emission shows bipolar outflows in the NE–SW direction with respect to the center of the SiO maser source. A high angular resolution map of the SiO v = 1, J = 2 \\to 1 maser in G75.78+0.34 shows that the SiO maser is associated with the CORE source at the earliest stage of high-mass star formation. Therefore, the newly detected SiO masers and their associated outflows will provide good probes for investigating this early high-mass star formation.

  8. Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

    NASA Astrophysics Data System (ADS)

    Shuo, Zhao; Lei, Guo; Jing, Wang; Jun, Xu; Zhihong, Liu

    2009-10-01

    Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.

  9. Refinement of Eutectic Si in High Purity Al-5Si Alloys with Combined Ca and P Additions

    NASA Astrophysics Data System (ADS)

    Ludwig, Thomas Hartmut; Li, Jiehua; Schaffer, Paul Louis; Schumacher, Peter; Arnberg, Lars

    2015-01-01

    The effects of combined additions of Ca and P on the eutectic Si in a series of high purity Al-5 wt pct Si alloys have been investigated with the entrained droplet technique and complementary sets of conventional castings. Differential scanning calorimetry (DSC) and thermal analysis were used to investigate the eutectic droplet undercooling and the recalescence undercooling, respectively. Optical microscopy, SEM, EPMA, and TEM were employed to characterize the resultant microstructures. It was found that 250 ppm Ca addition to Al-5Si wt pct alloys with higher P contents leads to a significant increase of the eutectic droplet undercooling. For low or moderate cooling rates, the TEM results underline that Ca additions do not promote Si twinning. Thus, a higher twin density cannot be expected in Ca containing Al-Si alloys after, e.g., sand casting. Consequently, a refinement of the eutectic Si from coarse flake-like to fine plate-like structure, rather than a modification of the eutectic Si to a fibrous morphology, was achieved. This strongly indicates that the main purpose of Ca additions is to counteract the coarsening effect of the eutectic Si imposed by higher P concentrations. Significant multiple Si twinning was observed in melt-spun condition; however, this can be attributed to the higher cooling rate. After DSC heating (slow cooling), most of Si twins disappeared. Thus, the well-accepted impurity-induced twinning mechanism may be not valid in the case of Ca addition. The possible refinement mechanisms were discussed in terms of nucleation and growth of eutectic Si. We propose that the pre-eutectic Al2Si2Ca phase and preferential formation of Ca3P2 deactivate impurity particles, most likely AlP, poisoning the nucleation sites for eutectic Si.

  10. The improved mechanical properties of β-CaSiO3 bioceramics with Si3N4 addition.

    PubMed

    Pan, Ying; Zuo, Kaihui; Yao, Dongxu; Yin, Jinwei; Xin, Yunchuan; Xia, Yongfeng; Liang, Hanqin; Zeng, Yuping

    2015-03-01

    The motivation of this study is to investigate the effect of Si3N4 addition on the sinterability of β-CaSiO3 ceramics. β-CaSiO3 ceramics with different content of Si3N4 were prepared at the sintering temperature ranging from 1000°C to 1150°C. The results showed that Si3N4 can be successfully used as sintering additive by being oxidized to form SiO2. The β-CaSiO3 ceramics with 3wt% Si3N4 sintered at 1100°C revealed flexural strength, hardness and fracture toughness of 157.2MPa, 4.4GPa and 2.3MPam(1/2) respectively, which was much higher than that of pure β-CaSiO3 ceramics (41.1MPa, 1.0GPa, 1.1MPam(1/2)). XRD analysis and SEM observation indicated that the main phase maintained to be β-phase after sintering. PMID:26580024

  11. Enhanced magnetic behaviors of CoPt nanoparticles by addition of SiO{sub 2}

    SciTech Connect

    Wang, Yaxin; Zhang, Xiaolong; Liu, Yang; Jiang, Yuhong; Zhang, Yongjun; Yang, Jinghai

    2014-05-01

    Equiatomic L1{sub 0} CoPt alloy nanoparticles (NPs) with various contents of SiO{sub 2} are synthesized by the simple sol–gel method. The SiO{sub 2} additions restrain the growth of grain and hinder the agglomeration formation. The coercivity increases first and then decreases with SiO{sub 2} addition. Compared to the 0 μl-SiO{sub 2} CoPt NPs, the higher ordering degree and better magnetic properties are obtained by the addition of amount 10 μl SiO{sub 2} in our sample. And the coercivity is two times as large as that of 0 μl-SiO{sub 2} NPs. When the addition of SiO{sub 2} is more than 10 μl, the deteriorated magnetic properties are ascribed to the transformation from hard magnetically phase to soft magnetically phase due to the decrease of particle size. - Graphical abstract: L1{sub 0} CoPt alloy nanoparticles with various contents of SiO{sub 2} are synthesized by sol–gel method. The effects of SiO{sub 2} on the structure and magnetic properties of CoPt nanoparticles are investigated. - Highlights: • The L1{sub 0} CoPt–SiO{sub 2} nanoparticles (NPs) were synthesized by sol–gel method. • Effects of SiO{sub 2} content on the structure and magnetic properties were investigated. • The addition of SiO{sub 2} restrained the growth of particle size. • CoPt–10 μl SiO{sub 2} NPs showed a higher ordering degree and better magnetic properties.

  12. Mechanical properties of SiB6 addition of carbon sintered body

    NASA Astrophysics Data System (ADS)

    Tanaka, Samon; Fukushima, Noriyuki; Matsushita, Jun-ichi; Akatsu, T.; Niihara, K.; Yasuda, E.

    2001-04-01

    Boride material is said as the useful material, which has high melting point and high strength. B4C in carbide is very hard at the next of the diamond and cubic-BN in the Mohs hardness and B4C has excellent chemical stability and high strength. B4C is being used as the polishing material from the hardness. However, it is difficult to make sintered body from high melting point (2623 K). Several silicon boride phases such as SiB4, SiB6, SiB6-x, SiB6+x, and Si11B31, were previously reported. Silicon hexaboride (SiB6) has proved to be a potentially useful material because of its high degree of hardness, moderate melting point (2123 K), and low specific gravity. We studied the preparation of SiB6-B4C-SiC sintered body in this report. We knew experientially that SiB6 reacts with carbon at the high temperature, and forms B4C or SiC. Carbon addition SiB6 sintered body produced by hot pressing and reaction sintering that sintering condition was 1973 K for 3.6 ks in vacuum under a pressure of 25 MPa. The relative density of sintered bodies (SiB6-0,5,10,15 wt%C) was approximately 100%. Characterization of mechanical properties was used indentation, Vickers hardness and thermal

  13. Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics

    SciTech Connect

    Taylor, N.; Kim, H.; Desjardins, P.; Foo, Y. L.; Greene, J. E.

    2000-05-15

    The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto dangling bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.

  14. Sintering and properties of Si3N4 with and without additives by HIP treatment

    NASA Technical Reports Server (NTRS)

    Kuratani, S.; Shimada, M.; Koizumi, M.

    1986-01-01

    Hot Isostatic Pressing (HIP) of Si3N4 powders with and without additives was performed using a glass container, and various kinds of pressureless-sintered Si3N4 were HIP'ed without a container. The effects of HIP treatment on density, microstructure, flexural strength, microhardness, and fracture toughness on Si3N4 ceramics were studied. Using a glass container it was difficult to reach theoretical density. The microhardness of HIP'ed Si3N4 without additives was low, and the fracture toughness of HIP'ed Si3N4 with and without additives was 22 to 25 W/m-K, and it decreased with increasing the amount of additives. The density and flexural strength, and hardness of pressureless-sintered Si3N4 which contained Al2O and Y2O3 as oxide additives were remarkably improved by HIP treatment using nitrogen as a pressure transmitting gas. It is very important to select the sintering conditions for fabricating the presintered body of Si3N4 in order to improve the mechanical properties of Si3N4 by HIP treatment.

  15. Influence of Si Addition on Quenching Sensitivity and Formation of Nano-Precipitate in Al-Mg-Si Alloys.

    PubMed

    Kim, JaeHwang; Hayashi, Minoru; Kobayashi, Equo; Sato, Tatsuo

    2016-02-01

    The age-hardening is enhanced with the high cooling rate since more vacancies are formed during quenching, whereas the stable beta phase is formed with the slow cooling rate just after solid solution treatment resulting in lower increase of hardness during aging. Meanwhile, the nanoclusters are formed during natural aging in Al-Mg-Si alloys. The formation of nanoclusters is enhanced with increasing the Si amount. High quench sensitivity based on mechanical property changes was confirmed with increasing the Si amount. Moreover, the nano-size beta" phase, main hardening phase, is more formed by the Si addition resulting in enhancement of the age-hardening. The quench sensitivity and the formation behavior of precipitates are discussed based on the age-hardening phenomena. PMID:27433677

  16. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    SciTech Connect

    Cao, J. |

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  17. Fabrication and characterization of Si3N4 ceramics without additives by high pressure hot pressing

    NASA Technical Reports Server (NTRS)

    Shimada, M.; Tanaka, A.; Yamada, T.; Koizumi, M.

    1984-01-01

    High pressure hot-pressing of Si3N4 without additives was performed using various kinds of Si3N4 powder as starting materials, and the relation between densification and alpha-beta phase transformation was studied. The temperature dependences of Vickers microhardness and fracture toughness were also examined. Densification of Si3N4 was divided into three stages, and it was found that densification and phase transformation of Si3N4 under pressure were closely associated. The results of the temperature dependence of Vickers microhardness indicated that the high-temperature hardness was strongly influenced not only by the density and microstructure of sintered body but also by the purity of starting powder. The fracture toughness values of Si3N4 bodies without additives were 3.29-4.39 MN/m to the 3/2 power and independent of temperature up to 1400 C.

  18. Silicon purification using a Cu-Si alloy source

    NASA Technical Reports Server (NTRS)

    Powell, R. C.; Tejedor, P.; Olson, J. M.

    1986-01-01

    Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

  19. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  20. Thermal expansion of Ti{sub 5}Si{sub 3} with Ge, B, C, N, or O additions

    SciTech Connect

    Williams, J. J.; Kramer, M. J.; Akinc, M.

    2000-08-01

    The crystallographic thermal expansion coefficients of Ti{sub 5}Si{sub 3} from 20 to 1000 degree sign C as a function of B, C, N, O, or Ge content were measured by high-temperature x-ray diffraction using synchrotron sources at Cornell University (Cornell High Energy Synchrotron Source; CHESS) and Argonne National Laboratory (Advanced Photon Source; APS). Whereas the ratio of the thermal expansion coefficients along the c and a axes was approximately 3 for pure Ti{sub 5}Si{sub 3}, this ratio decreased to about 2 when B, C, or N atoms were added. Additions of O and Ge were less efficient at reducing this thermal expansion anisotropy. The extent by which the thermal expansion was changed when B, C, N, or O atoms were added to Ti{sub 5}Si{sub 3} correlated with their expected effect on bonding in Ti{sub 5}Si{sub 3}. (c) 2000 Materials Research Society.

  1. Solid source growth of Si oxide nanowires promoted by carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lu, Congxiang; Liu, Wen-wen; Wang, Xingli; Li, Xiaocheng; Tan, Chong Wei; Tay, Beng Kang; Coquet, Philippe

    2014-09-01

    We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

  2. Work of Adhesion in Al/SiC Composites with Alloying Element Addition

    NASA Astrophysics Data System (ADS)

    Fang, Xin; Fan, Tongxiang; Zhang, Di

    2013-11-01

    In the current work, a general methodology was proposed to demonstrate how to calculate the work of adhesion in a reactive multicomponent alloy/ceramic system. Applying this methodology, the work of adhesion of Al alloy/SiC systems and the influence of different alloying elements were predicted. Based on the thermodynamics of interfacial reaction and calculation models for component activities, the equilibrium compositions of the melts in Al alloy/SiC systems were calculated. Combining the work of adhesion models for reactive metal/ceramic systems, the work of adhesion in Al alloy/SiC systems both before and after the reaction was calculated. The results showed that the addition of most alloying elements, such as Mg, Si, and Mn, could increase the initial work of adhesion, while Fe had a slightly decreasing effect. As for the equilibrium state, the additions of Cu, Fe, Mn, Ni, Ti, and La could increase the equilibrium work of adhesion, but the additions of Mg and Zn had an opposite effect. Si was emphasized due to its suppressing effect on the interfacial reaction.

  3. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    NASA Astrophysics Data System (ADS)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit

    2015-08-01

    In this study, Laser Engineered Net Shaping (LENSTM) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples' top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV0.2) > 100% Ti-N coating (1846 ± 68.5 HV0.2) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV0.2). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance.

  4. Eutectic Morphology of Al-7Si-0.3Mg Alloys with Scandium Additions

    NASA Astrophysics Data System (ADS)

    Pandee, Phromphong; Gourlay, C. M.; Belyakov, S. A.; Ozaki, Ryota; Yasuda, Hideyuki; Limmaneevichitr, Chaowalit

    2014-09-01

    The mechanisms of Al-Si eutectic refinement due to scandium (Sc) additions have been studied in an Al-7Si-0.3Mg foundry alloy. The evolution of eutectic microstructure is studied by thermal analysis and interrupted solidification, and the distribution of Sc is studied by synchrotron micro-XRF mapping. Sc is shown to cause significant refinement of the eutectic silicon. The results show that Sc additions strongly suppress the nucleation of eutectic silicon due to the formation of ScP instead of AlP. Sc additions change the macroscopic eutectic growth mode to the propagation of a defined eutectic front from the mold walls opposite to the heat flux direction similar to past work with Na, Ca, and Y additions. It is found that Sc segregates to the eutectic aluminum and AlSi2Sc2 phases and not to eutectic silicon, suggesting that impurity-induced twinning does not operate. The results suggest that Sc refinement is mostly caused by the significantly reduced silicon nucleation frequency and the resulting increase in mean interface growth rate.

  5. Strength and microstructure of sintered Si3N4 with rare-earth-oxide additions

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Mieskowski, D. M.

    1985-01-01

    Room temperature, 700-, 1000-, 1200-, and 1370-C examinations of the effect of 1.7-2.6 mol pct rare earth oxide additions to sintered Si3N4 are conducted. While the room temperature-1000 C bend strengths were higher for this material with Y2O3 additions than with CeO2, La2O3, or Sm2O3, the reverse was true at 1200-1370 C. This phenomenon is explained on the basis of microstructural differences, since quantitative microscopy of SEM replicas showed the Si3N4-Y2O3 composition to contain both a higher percentage of elongated grains and a coarser microstructure than the other three alternatives. The elongated grains appear to increase this composition's low temperature strength irrespective of microstructural coarseness; this coarseness, however, decreases strength relative to the other compositions at higher temperatures.

  6. Densification of Reaction Bonded Silicon Nitride with the Addition of Fine Si Powder Effects on the Sinterability and Mechanical Properties

    SciTech Connect

    Lee, Sea-Hoon; Cho, Chun-Rae; Park, Young-Jo; Ko, Jae-Woong; Kim, Hai-Doo; Lin, Hua-Tay; Becher, Paul F

    2013-01-01

    The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain Lu2O3-SiO2 additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at 1850oC through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at 1950oC. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine Si3N4 particles after nitridation and sintering at and above 1600oC. The amount of residual SiO2 within the specimens was not strongly affected by adding fine Si powder because most of the SiO2 layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and 8.0 MPa m1/2, respectively.

  7. Strength and microstructure of Si3N4 sintered with ZrO2 additions

    SciTech Connect

    Sanders, W.A.; Mieskowski, D.M.

    1986-04-01

    Densities greater than 99 percent of theoretical were obtained with stabilized ZrO2 additions to Si3N4. Material sintered at 2140 C under 2.5 MPa nitrogen overpressure with 3.8, 9.9, and 13.4 wt pct ZrO2 had a predominantaly equiaxed grain size ranging from 0.2 to 7.0 microns. At 1370 C, the latter composition exhibited a flexural strength of about 487 MPa, equal to that of a finer-grain-size, hot-pressed Si3N4 + ZrO2 material having excellent high-temperature static fatigue properties. Transmission electron microscopy of the sintered Si3N4 revealed a glassy grain-boundary phase at all three ZrO2 levels and partially crystalline triple points for the 9.9 and 13.4 wt pct ZrO2-containing materials. Slow crack growth was observed for 1370 C flexure tests and correlated with nonlinear load deflection traces for stresses greater than 503 MPa. The crystallization of the grain-boundary glass is interpreted as beneficial to the attainment of high (1370 C) flexural strength. 20 references.

  8. Percolation model with an additional source of disorder

    NASA Astrophysics Data System (ADS)

    Kundu, Sumanta; Manna, S. S.

    2016-06-01

    The ranges of transmission of the mobiles in a mobile ad hoc network are not uniform in reality. They are affected by the temperature fluctuation in air, obstruction due to the solid objects, even the humidity difference in the environment, etc. How the varying range of transmission of the individual active elements affects the global connectivity in the network may be an important practical question to ask. Here a model of percolation phenomena, with an additional source of disorder, is introduced for a theoretical understanding of this problem. As in ordinary percolation, sites of a square lattice are occupied randomly with probability p . Each occupied site is then assigned a circular disk of random value R for its radius. A bond is defined to be occupied if and only if the radii R1 and R2 of the disks centered at the ends satisfy a certain predefined condition. In a very general formulation, one divides the R1-R2 plane into two regions by an arbitrary closed curve. One defines a point within one region as representing an occupied bond; otherwise it is a vacant bond. The study of three different rules under this general formulation indicates that the percolation threshold always varies continuously. This threshold has two limiting values, one is pc(sq) , the percolation threshold for the ordinary site percolation on the square lattice, and the other is unity. The approach of the percolation threshold to its limiting values are characterized by two exponents. In a special case, all lattice sites are occupied by disks of random radii R ∈{0 ,R0} and a percolation transition is observed with R0 as the control variable, similar to the site occupation probability.

  9. Percolation model with an additional source of disorder.

    PubMed

    Kundu, Sumanta; Manna, S S

    2016-06-01

    The ranges of transmission of the mobiles in a mobile ad hoc network are not uniform in reality. They are affected by the temperature fluctuation in air, obstruction due to the solid objects, even the humidity difference in the environment, etc. How the varying range of transmission of the individual active elements affects the global connectivity in the network may be an important practical question to ask. Here a model of percolation phenomena, with an additional source of disorder, is introduced for a theoretical understanding of this problem. As in ordinary percolation, sites of a square lattice are occupied randomly with probability p. Each occupied site is then assigned a circular disk of random value R for its radius. A bond is defined to be occupied if and only if the radii R_{1} and R_{2} of the disks centered at the ends satisfy a certain predefined condition. In a very general formulation, one divides the R_{1}-R_{2} plane into two regions by an arbitrary closed curve. One defines a point within one region as representing an occupied bond; otherwise it is a vacant bond. The study of three different rules under this general formulation indicates that the percolation threshold always varies continuously. This threshold has two limiting values, one is p_{c}(sq), the percolation threshold for the ordinary site percolation on the square lattice, and the other is unity. The approach of the percolation threshold to its limiting values are characterized by two exponents. In a special case, all lattice sites are occupied by disks of random radii R∈{0,R_{0}} and a percolation transition is observed with R_{0} as the control variable, similar to the site occupation probability.

  10. Percolation model with an additional source of disorder.

    PubMed

    Kundu, Sumanta; Manna, S S

    2016-06-01

    The ranges of transmission of the mobiles in a mobile ad hoc network are not uniform in reality. They are affected by the temperature fluctuation in air, obstruction due to the solid objects, even the humidity difference in the environment, etc. How the varying range of transmission of the individual active elements affects the global connectivity in the network may be an important practical question to ask. Here a model of percolation phenomena, with an additional source of disorder, is introduced for a theoretical understanding of this problem. As in ordinary percolation, sites of a square lattice are occupied randomly with probability p. Each occupied site is then assigned a circular disk of random value R for its radius. A bond is defined to be occupied if and only if the radii R_{1} and R_{2} of the disks centered at the ends satisfy a certain predefined condition. In a very general formulation, one divides the R_{1}-R_{2} plane into two regions by an arbitrary closed curve. One defines a point within one region as representing an occupied bond; otherwise it is a vacant bond. The study of three different rules under this general formulation indicates that the percolation threshold always varies continuously. This threshold has two limiting values, one is p_{c}(sq), the percolation threshold for the ordinary site percolation on the square lattice, and the other is unity. The approach of the percolation threshold to its limiting values are characterized by two exponents. In a special case, all lattice sites are occupied by disks of random radii R∈{0,R_{0}} and a percolation transition is observed with R_{0} as the control variable, similar to the site occupation probability. PMID:27415234

  11. Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

    SciTech Connect

    Nordmark, H.; Holmestad, R.; Nagayoshi, H.; Matsumoto, N.; Nishimura, S.; Terashima, K.; Marioara, C. D.; Walmsley, J. C.; Ulyashin, A.

    2009-02-15

    Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to micrometer range of mono- and as-cut multicrystalline silicon, was observed after deposition of WSi{sub 2} particles that acted as a mask for subsequent hydrogen radical etching. Simultaneous Si whisker growth was observed for long residence time of the source gas and low H{sub 2} flow rate with high pressure. The whiskers formed via vapor-solid-solid growth, in which the deposited WSi{sub 2} particles acted as catalysts for a subsequent metal-induced layer exchange process well below the eutectic temperature. In this process, SiH{sub x} species, formed by substrate etching by the H radicals, diffuse through the metal particles. This leads to growth of crystalline Si whiskers via metal-induced solid-phase crystallization. Transmission electron microscopy, electron diffraction, and x-ray energy dispersive spectroscopy were used to study the WSi{sub 2} particles and the structure of the Si substrates in detail. It has been established that the whiskers are partly crystalline and partly amorphous, consisting of pure Si with WSi{sub 2} particles on their tips as well as sometimes being incorporated into their structure.

  12. Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si

    NASA Astrophysics Data System (ADS)

    Mangelinck, D.; Gas, P.; Gay, J. M.; Pichaud, B.; Thomas, O.

    1998-09-01

    We studied the effect of the addition of cobalt, platinum, or gold on the cell parameter of NiSi2 deposited epitaxially on (111)Si. Namely, the formation and the microstructure of NiSi2 films containing one of these elements are compared to those of the pure disilicide. The solubility of Co, Pt, and Au in NiSi2 ranges from a total substitution to nickel in the case of cobalt to a very weak quantity (less than 1%) in the case of platinum. An intermediate behavior was observed for gold which can occupy more than 10% of the metal sites. This important solubility has been confirmed by analysis of bulk Ni(Au) disilicides and is understood as a consequence of the metastability of gold silicides. Cobalt, Pt, and Au additions change the temperature of formation of NiSi2: from 800 °C for reaction with pure nickel, this temperature is lowered to 650 °C by Co and Au additions while it is increased to 950 °C for Pt. These modifications are consistent with the nucleation controlled formation of NiSi2 and the effect of added elements on both the interfacial energy and the stability of the disilicide. Measurements of the cell parameters (perpendicular and parallel) by x-ray diffraction revealed the relaxation state and the cell evolution of NiSi2 films. Platinum addition does not modify the cell in agreement with a very weak incorporation of platinum in NiSi2. The rigid interface model is well adapted to the growth of NiSi2, Ni(Au)Si2, and Ni(Co)Si2 films. According to this model and in spite of a large rhombohedral deformation, the system which better accommodates silicon is Ni(Co)Si2: in this case, there is practically no misfit between the film and the substrate. We also showed that misfit dislocations are generated principally during the NiSi2 formation and that their density evolves very little afterwards.

  13. Gas-source molecular beam epitaxy of SiGe virtual substrates: I. Growth kinetics and doping

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Gallas, B.; Ferguson, R.; Fernàndez, J.; Zhang, J.; Harris, J. J.

    2000-04-01

    We have studied the growth by gas-source molecular beam epitaxy (GS-MBE) of SiGe virtual substrates. We have first determined the relationship existing between the Ge concentration in SiGe thick films and the gas phase ratio of disilane and germane, and its behaviour versus growth temperature. We find that Si atoms are 4.6 times more likely to be incorporated than Ge atoms at 550 °C. This incorporation probability decreases as the growth temperature increases, following a thermally activated law with a 0.082-0.126 eV characteristic energy. The dependence of SiGe growth rate on substrate temperatures has a cross-over point at approximately 8% of Ge, above which the growth rate decreases significantly as the temperature increases . Otherwise, we show what p-type or n-type doping levels are typically achievable in SiGe virtual substrates, and the influence diluted diborane and arsine have on the growth kinetics of SiGe. Additionally, we demonstrate that the `pre-build-up/flash-off' technique originally proposed by Iyer et al for solid-source MBE (1981 J. Appl. Phys. 52 5608) yields abrupt arsenic doping profiles in GS-MBE.

  14. One component metal sintering additive for {beta}-SiC based on thermodynamic calculation and experimental observations

    SciTech Connect

    Noviyanto, Alfian; Yoon, Dang-Hyok

    2011-08-15

    Graphical abstract: . Standard Gibbs formation free energies vs. temperature for various metal carbides. The heavy line represents the standard Gibbs free energy for {beta}-SiC. The hatched area denotes the typical liquid phase hot pressing temperature of {beta}-SiC (1973-2123 K). Highlights: {yields} Various metal elements were examined as a sintering additive for {beta}-SiC. {yields} Al and Mg enhanced the density significantly without decomposing {beta}-SiC, as predicted by thermodynamic simulation. {yields} Cr, Fe, Ta, Ti, V and W additives formed metal carbide and/or silicide compounds by decomposing {beta}-SiC. {yields} This approach would be useful for selecting effective sintering additive for high temperature ceramics. -- Abstract: Various types of metals were examined as sintering additives for {beta}-SiC by considering the standard Gibbs formation free energy and vapor pressure under hot pressing conditions (1973-2123 K), particularly for applications in nuclear reactors. Metallic elements having the low long-term activation under neutron irradiation condition, such as Cr, Fe, Ta, Ti, V and W, as well as widely used elements, Al, Mg and B, were considered. The conclusions drawn from thermodynamic considerations were compared with the experimental observations. Al and Mg were found to be effective sintering additives, whereas the others were not due to the formation of metal carbides or silicides from the decomposition of SiC under hot pressing conditions.

  15. Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources

    SciTech Connect

    Beernink, K.J.; Thornton, R.L.; Anderson, G.B.; Emanuel, M.A.

    1995-05-08

    Si diffusion and impurity-induced layer intermixing from a buried impurity source have been studied by transmission electron microscopy and secondary ion mass spectroscopy of isolated, Si-doped GaAs layers in an undoped Al{sub 0.4}Ga{sub 0.6}As/GaAs superlattice and by photoluminescence measurements on Si-doped GaAs quantum wells with undoped Al{sub 0.4}Ga{sub 0.6}As barriers. In annealed samples, the Si profile suggests a Si diffusion process involving multiply ionized column III vacancies. The width of the resulting Si profile and the spatial extent and completeness of intermixing strongly depend on the initial Si concentration in the doped layer.

  16. Additive Effects on Si3n4 Oxidation/Volatilization in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Robinson, R. Craig; Fox, Dennis S.; Wenglarz, Richard A.; Ferber, Mattison K.

    2002-01-01

    Two commercially available additive-containing silicon nitride materials were exposed in four environments which range in severity from dry oxygen at 1 atm pressure, and low gas velocity to an actual turbine engine. Oxidation and volatilization kinetics were monitored at temperatures ranging from 1066 to 1400 C. The main purpose of this paper is to examine the surface oxide morphology resulting from the exposures. It was found that the material surface was enriched in rare earth silicate phases in combustion environments when compared to the oxides formed on materials exposed in dry oxygen. However, the in situ formation of rare earth disilicate phases offered little additional protection from the volatilization of silica observed in combustion environments. It was concluded that externally applied environmental barrier coatings are needed to protect additive-containing silicon nitride materials from volatilization reactions in combustion environments. Introduction Si3N4 is proposed for use as components, such as vanes, in turbine applications. Tens of thousands of hours of life are needed for both land-based turbines and aeropropulsion applications. Additive-containing SisN4 materials are

  17. Consolidation of Si3N4 without additives (by hot isostatic pressing)

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.

    1983-01-01

    The potential of using hot isostatic pressing (HIP'ing) technique to produce dense silicon nitride materials without or with a reduced amount of additives (much less than 5 w/o) was investigated. Hot isostatic pressing technique can provide higher pressure and temperature than hot pressing can, thus has the potential of requiring less densification aids to consolidate Si3N4 materials. It was anticipated that if such dense materials could be fabricated, the high temperature strength of the material should be improved significantly. Observations on the phase transformation, densification behavior, and microstructures of the samples are also documented. Density, microhardness, four point bend strength (room temperature and 1370 C) were measured on selected densified materials.

  18. Microwaves as an energy source for producing beta-SiC.

    PubMed

    Aguilar, J; Rodríguez, J; Hinojosa, M

    2001-01-01

    This work describes the production of silicon carbide using microwaves as the energy source, which was supplied by means of variable power, up to 2000 Watts, magnetron operating at 2.45 GHz. The obtained samples were analyzed by means of X-ray diffraction and observed with electron microscopy (SEM). Temperatures achieved were around 2000 degrees C, which is the upper limit for the beta-SiC growth regime, before getting other SiC polytypes. Analysis of different portions of the sample showed that beta-SiC was the only formed compound, although free SiO2 and graphite were also present. Observations made by SEM demonstrated different crystal growth regime, meaning that thermal conditions were not totally uniform. The amount of beta-SiC found and the relative simplicity of the device prove that production of this material from silica and graphite is possible by applying microwaves as an energy source.

  19. Additional muon calculations for the SLC positron source

    SciTech Connect

    Nelson, W.R.; McCall, R.C.

    1985-04-23

    This note is an update to the muon calculations presented in CN-221 and takes into account: (1) a more complete muon production and transport model, including an estimate of wide angle production based on experimental data, (2) additional earth shielding that will be added on top and both sides of the 2/3 tunnel areas, and (3) a detailed analysis of the earth profile as it pertains to shielding in the direction of the SLAC site boundary. The highest annual dose at the SLAC boundary is found to be 13 mrem/year (4000 hours of operation at 50 kW), and this occurs at a horizontal angle of 0 degrees and a vertical angle of 3.6 degrees relative to the incident beam direction. Although the shielding criteria is 10 mrem/year at the site boundary, the radiation transport model becomes somewhat conservative at large distances from the shield, which should bring the 13 mrem/year number actually well below the criteria. This point is also about 28 feet above the roadway. Extension of this line may strike the ground in the Christmas tree farm beyond the SLAC boundary but there will be additional attenuation due to distance. We do not recommend that any additional shielding be added at this time. 4 refs., 1 fig.

  20. Influence of Si addition on the microstructure and mechanical properties of Ti-35Nb alloy for applications in orthopedic implants.

    PubMed

    Tavares, A M G; Ramos, W S; de Blas, J C G; Lopes, E S N; Caram, R; Batista, W W; Souza, S A

    2015-11-01

    In the development of new materials for orthopedic implants, special attention has been given to Ti alloys that show biocompatible alloy elements and that are capable of reducing the elastic modulus. Accordingly, Ti-Nb-Si alloys show great potential for application. Thus, this is a study on the microstructures and properties of Ti-35Nb-xSi alloys (x=0, 0.15, 0.35 and 0.55) (wt%) which were thermally treated and cooled under the following conditions: furnace cooling (FC), air cooling (AC), and water quenching (WQ). The results showed that Si addition is effective to reduce the density of omega precipitates making beta more stable, and to produce grain refinement. Silicides, referred as (Ti,Nb)3Si, were formed for alloys containing 0.55% Si, and its formation presumably occurred during the heating at 1000°C. In all cooling conditions, the hardness values increased with the increasing of Si content, as a result from the strong Si solid solution strengthening effect, while the elastic modulus underwent a continuous reduction due to the reduction of omega precipitates in beta matrix. Lower elastic moduli were observed in water-quenched alloys, which concentration of 0.15% Si was more effective in their reduction, with value around 65 GPa. Regarding Ti-35Nb-xSi alloys (x=0, 0.15 and 0.35), the "double yield point" phenomenon, which is typical of alloys with shape memory effect, was observed. The increase in Si concentration also produced an increase from 382 MPa to 540 MPa in the alloys' mechanical strength. Ti-35Nb-0.55Si alloy, however, showed brittle mechanical behavior which was related to the presence of silicides at the grain boundary.

  1. Modifying Si-based consolidants through the addition of colloidal nano-particles

    NASA Astrophysics Data System (ADS)

    Ksinopoulou, E.; Bakolas, A.; Moropoulou, A.

    2016-04-01

    The modification of silicon-based stone consolidants has been the subject of many scientific studies aiming to overcome the commonly reported drawbacks of these materials, such as the tendency to shrink and crack during drying. The addition of nano-particle dispersions into silica matrix has been found to enhance their effectiveness in several ways. Objective of the current research was to study the preparation of particle-modified consolidants (PMC), consisting of an ethyl silicate matrix (TEOS) loaded with colloidal silica (SiO2) nano-particles and oxide titania (TiO2) particles. The effect of the polyacrylic acid on the dispersion stability was also investigated, by varying its concentration into PMC samples. The prepared materials were allowed to dry in two different relative humidity environments and then evaluated based on their stability in the sol phase, the aggregation sizes, determined through dynamic light scattering, the % solids content and their morphological characteristics, observed via scanning electron microscopy (SEM-EDAX). Mercury intrusion porosimetry was also applied to investigate the microstructural characteristics and differences between the prepared consolidants. Significant role in the final form of the material is played by both the initial molar ratios in the mixtures, as well as the conditions where the drying and aging takes place. Based on the results, the three-component PMCs appear to be promising in stone consolidation, as they show a reduction in cracking and shrinkage during drying and a more porous network, compared with the siliceous material, or the two-component TEOS-SiO2 formulation.

  2. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    SciTech Connect

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D. Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  3. Investigating the performance of SiGe embedded dual source p-FinFET architecture

    NASA Astrophysics Data System (ADS)

    Sinha, Kunal; Gupta, Partha Sarathi; Chattopadhyay, Sanatan; Rahaman, Hafizur

    2016-10-01

    In this work, a modified Fin shaped Field Effect Transistor (FinFET) structure has been proposed with dual SiGe embedded extended source regions. Comparative simulation studies with SiGe embedded source/drain conventional single Fin channel and dual Fin channel FinFET structure having similar device footprint area shows almost 3× and 1.5× improvement of drive current respectively and lower threshold voltage in the proposed architecture. The dual extended SiGe source regions and presence of Si drain in the vertical direction of the channel generate bi-axial channel stress which improves the channel charge density, which results in improvement in drive current significantly. Also it has been observed from various simulation studies that the separated gate regions increase the inversion current density in the channel which also leads to improvement of the device performance.

  4. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

    SciTech Connect

    Hackley, Justin; Richardson, Christopher J. K.; Sarney, Wendy L.

    2013-11-15

    The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

  5. Influence of Ti and La Additions on the Formation of Intermetallic Compounds in the Al-Zn-Si Bath

    NASA Astrophysics Data System (ADS)

    Xu, Jin; Gu, Qin-Fen; Li, Qian; Lu, Hu-Sheng

    2016-09-01

    The effect of Ti and La additions on the formation of intermetallic compounds (IMCs) in the galvalume (55Al-Zn-1.6Si wt pct) bath was investigated experimentally and further studied with first-principles calculation. The studied baths contain: 1 wt pct Fe, with Ti content ranging from 0.05 to 0.15 wt pct and La content ranging from 0.05 to 0.30 wt pct. Combination of the experimental results with the thermodynamic analysis shows that the solubility of Fe in the alloy bath decreases with an increase of Ti content, which results in the formation of mass dross. Compared with the Ti-containing alloy, La promotes the formation of τ 5 phase (Fe2Al8Si). When both Ti and La are added, Fe4Al13, τ 5, τ 6 (β-Al4.5FeSi), TiAl3, and Ti2Al20La phases were observed. Since these IMCs would consume more Si in the bath, the decrease of Si content with Ti and La additions is more significant than that of the bath without these additions. Furthermore, the formation mechanism of Ti/TiAl3/Ti2La20La core-shell structure in the coating bath is proposed. This study has implications for strategic design of industry hot-dip production with exceptional mechanical properties of Al alloy coating.

  6. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    PubMed

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  7. Microstructure and Room Temperature Mechanical Properties of the Ni3Si-BASED Alloy with Titanium Addition

    NASA Astrophysics Data System (ADS)

    Wang, S. K.; Fu, C. C.; Cai, Z. W.; Jian, S. R.; Jang, J. S. C.; Zhang, H. Z.; Hsu, H. C.

    2011-06-01

    The microstructure and room temperature (RT) mechanical properties of the Ni-15Si-2Nb-1Cr-3Ti-0.2B alloy were investigated by means of X-ray diffraction, scanning electron microscopy (SEM), electron probe microanalysis (EPMA), transmission electron microscopy (TEM), and tensile test in air and vacuum. The results of tensile test revealed that the effect of Ti addition can significantly improve the elongation as well as ultimate tensile strength (UTS) (18.3% and 1320 MPa in air, 21% and 1600 MPa in vacuum) in comparison with the Ni-18Si-3Nb-1Cr-0.2B base alloy (10% and 1130 MPa in air, 14% and 1240 MPa in vacuum) at room temperature. In addition, the fracture surface of specimen after tensile test presents a typical transgranular ductile mode, with a fully dimpled fracture pattern. This indicates that the addition of Ti in the Ni-15Si-2Nb-1Cr-3Ti-0.2B alloy can effectively suppress the environmental embrittlement at room temperature. In addition, the Ni-15Si-2Nb-1Cr-3Ti-0.2B alloy exhibits insensitively to the strain rate both in air or vacuum at room temperature.

  8. Effect of ternary additions on the oxidation resistance of Ti{sub 5}Si{sub 3}

    SciTech Connect

    Thom, A.J.; Akinc, M. |

    1995-10-01

    Refractory intermetallic silicides are receiving increasing consideration for use as high temperature structural materials. Ti{sub 5}Si{sub 3}-based compositions are attractive due to their ability to incorporate a variety of interstitial ternary additions. These ternary additions present a unique opportunity to potentially tailor physical properties. Previous experimental work has shown that these additions significantly increase the otherwise poor oxidation resistance of undoped Ti{sub 5}Si{sub 3} above 700 C. Recent experimental work by the authors on the oxidation of small atom doped Ti{sub 5}Si{sub 3} is discussed. Interstitial additions of boron, carbon, and oxygen substantially improve the isothermal oxidation resistance of Ti{sub 5}Si{sub 3} at 1,000 C. In contrast, added nitrogen does not provide significant improvement. Even up to 1,306 C, interstitial oxygen imparts excellent oxidation resistance with a mass gain of 1.1 mg/cm{sup 2} after 240 hours.

  9. Additives

    NASA Technical Reports Server (NTRS)

    Smalheer, C. V.

    1973-01-01

    The chemistry of lubricant additives is discussed to show what the additives are chemically and what functions they perform in the lubrication of various kinds of equipment. Current theories regarding the mode of action of lubricant additives are presented. The additive groups discussed include the following: (1) detergents and dispersants, (2) corrosion inhibitors, (3) antioxidants, (4) viscosity index improvers, (5) pour point depressants, and (6) antifouling agents.

  10. Influence of sintering additives and TiC on properties of TiC/Si3N4 ceramics

    NASA Astrophysics Data System (ADS)

    Jiang, Yong; Wu, Laner; Sun, Wenzhou

    2013-06-01

    The properties of TiC/Si3N4 ceramics were investigated. TiC acts as electrically conductive additive. The sintering additives are mainly Y2O3-MgO, by adding Al2O3 or AlN separately, forming system Al2O3-Y2O3-MgO and system AlN-Y2O3-MgO. The contents of TiC and sintering additives play an important role in sintering behavior, mechanical properties and conductive properties of the TiC/Si3N4 composite material. The experimental results show that: in the condition of the experiments, the densities of sintered TiC/Si3N4 composite are not high. Bending strength of the material is a little lower than that of common Si3N4 ceramics. Part of the samples has conductive property (TiC more than 30%). The best conductivity of the samples is 2.3×10-2s/cm. It does not satisfy the demand of electrical discharge machining. Further research is needed to be done. The conductivity of the AlN-Y2O3-MgO sintered samples is better than that of Al2O3-Y2O3-MgO system.

  11. The Effect of SiC Particle Addition During FSW on Microstructure and Mechanical Properties of AZ31 Magnesium Alloy

    NASA Astrophysics Data System (ADS)

    Abbasi, M.; Abdollahzadeh, A.; Bagheri, B.; Omidvar, H.

    2015-12-01

    Welding and joining of magnesium alloys exert a profound effect on magnesium application expansion, especially in ground and air transportations where large-size, complex components are required. Due to specific physical properties of magnesium, its welding requires great control. In general, the solid-state nature of friction stir welding (FSW) process has been found to produce a low concentration of defects. In the current research, specimens from AZ31 magnesium alloy were welded together using the friction stir process with previously inserted SiC powder particles in the nugget zone. In other words, during the FSW process, the pre-placed SiC particles were stirred throughout the nugget zone of the weld. The results indicated that proper values of rotation and translation speeds led to good appearance of weld zone and suitable distribution of SiC particles producing increased weld strength. The comparison of the microstructures and mechanical properties of FS-welded AZ31 with those of FS-welded one using pre-placed SiC particles showed that the addition of SiC particles decreased the grain size and increased the strength and the formability index.

  12. Effects of La addition on the microstructure and tensile properties of Al-Si-Cu-Mg casting alloys

    NASA Astrophysics Data System (ADS)

    Lu, Tao; Pan, Ye; Wu, Ji-li; Tao, Shi-wen; Chen, Yu

    2015-04-01

    The effects of La addition on the microstructure and tensile properties of B-refined and Sr-modified Al-11Si-1.5Cu-0.3Mg casting alloys were investigated. With a trace addition of La (0.05wt%-0.1wt%), the mutual poisoning effect between B and Sr can be neutralized by the formation of LaB6 rather than SrB6. By employing a La/B weight ratio of 2:1, uniform microstructures, which are characterized by well refined α-Al grains and adequately modified eutectic Si particles as well as the incorporation of precipitated strengthening intermetallics, are obtained and lead to appreciable tensile properties with an ultimate tensile strength of 270 MPa and elongation of 5.8%.

  13. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

    NASA Astrophysics Data System (ADS)

    Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

    2016-01-01

    Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

  14. The angular dependence of an Si energy deposition spectrometer response at several radiation sources.

    PubMed

    Spurný, Frantisek; Trompier, François; Bottollier-Depois, Jean-François

    2005-06-01

    An MDU-Liulin spectrometer based on an Si-diode was mainly used during the last few years with the goal to use them for measurements onboard aircraft. To investigate its ability to obtain such measurements, the detector was tested in some radiation reference fields, like 60Co and other photon beams, neutrons of an AmBe and 252Cf sources and in high-energy radiation fields at CERN. Due to the high geometrical asymmetry of the Si-diode semiconductor, an angular dependence of the response would be expected. This work presents analyses and discusses the results of angular dependence studies obtained at the different radiation sources mentioned. It was found that these angular dependences vary with the type and energy of radiation. The influence of these variations on the use as a dosimeter onboard aircraft is also studied and discussed.

  15. Spectral aspects of the determination of Si in organic and aqueous solutions using high-resolution continuum source or line source flame atomic absorption spectrometry

    NASA Astrophysics Data System (ADS)

    Kowalewska, Zofia; Pilarczyk, Janusz; Gościniak, Łukasz

    2016-06-01

    High-resolution continuum source flame atomic absorption spectrometry (HR-CS FAAS) was applied to reveal and investigate spectral interference in the determination of Si. An intensive structured background was observed in the analysis of both aqueous and xylene solutions containing S compounds. This background was attributed to absorption by the CS molecule formed in the N2O-C2H2 flame. The lines of the CS spectrum at least partially overlap all five of the most sensitive Si lines investigated. The 251.611 nm Si line was demonstrated to be the most advantageous. The intensity of the structured background caused by the CS molecule significantly depends on the chemical form of S in the solution and is the highest for the most-volatile CS2. The presence of O atoms in an initial S molecule can diminish the formation of CS. To overcome this S effect, various modes of baseline fitting and background correction were evaluated, including iterative background correction (IBC) and utilization of correction pixels (WRC). These modes were used either independently or in conjunction with least squares background correction (LSBC). The IBC + LSBC mode can correct the extremely strong interference caused by CS2 at an S concentration of 5% w:w in the investigated solution. However, the efficiency of this mode depends on the similarity of the processed spectra and the correction spectra in terms of intensity and in additional effects, such as a sloping baseline. In the vicinity of the Si line, three lines of V were recorded. These lines are well-separated in the HR-CS FAAS spectrum, but they could be a potential source of overcorrection when using line source flame atomic absorption spectrometry (LS FAAS). The expected signal for the 251.625 nm Fe line was not registered at 200 mg L- 1 Fe concentration in the solution, probably due to the diminished population of Fe atoms in the high-temperature flame used. The observations made using HR-CS FAAS helped to establish a "safe" level

  16. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  17. Theoretical investigation of the addition reaction of the aluminum chlorosilylenoid H2SiAlCl3 with ethylene.

    PubMed

    Zhang, Mingxia; Li, Wenzuo; Liu, Zhenbo; Li, Qingzhong; Cheng, Jianbo

    2016-07-01

    The addition reaction of the aluminum chlorosilylenoid H2SiAlCl3 with ethylene was investigated using the M06-2X and QCISD methods for the first time. The calculated results demonstrate that the addition reaction proceeds via two pathways: path I involves just one transition state, while path II involves two transition states. Path I is more feasible dynamically, as it has a lower barrier height than path II. The effect of the solvent CH2Cl2 was taken into consideration using the PCM model. The results indicated that the addition reaction is less likely to occur in CH2Cl2 solvent than in vacuum. This work has therefore highlighted a new pathway for the synthesis of silicon heterocyclic compounds. Graphical Abstract Relative energies (in kJ·mol(-1)) of the stationary points along the potential energy surfaces of the addition reaction of H2SiAlCl3 with C2H4 (values in parentheses were calculated in CH2Cl2 solvent). PMID:27271163

  18. Structure and high-temperature properties of Ti{sub 5}Si{sub 3} with interstitial additions

    SciTech Connect

    Williams, Jason

    1999-12-01

    This study was motivated by the fact that previous research on the structure and properties of Ti{sub 5}Si{sub 3} showed unacceptably inconsistent results. The primary reason for these inconsistencies was interstitial contamination of Ti{sub 5}Si{sub 3} by carbon, nitrogen and oxygen. Thus, this study measured the effects that these interstitial atoms have on some of the previously reported properties. These properties include crystalline structure, thermal expansion anisotropy, electronic structure and bonding, and high temperature oxidation resistance. In Chapter 2 of this study, the lattice parameters and atomic positions of Ti{sub 5}Si{sub 3} as a function of carbon, nitrogen or oxygen content were measured via x-ray and neutron diffraction. Comparing these lattice parameters to those reported in other studies on supposedly pure Ti{sub 5}Si{sub 3} confirmed that the majority of the previous studies had samples with a considerable amount of interstitial impurities. In fact, the lattice parameter trends given in Chapter 2 can be used to estimate the types and level of impurities in these studies. Furthermore, Chapter 2 discusses how atomic positions change as interstitial atoms are incorporated into the lattice. These changes in atomic separations suggest that strong bonds form between the interstitial atoms and the surrounding titanium atoms. This is in full agreement with the electronic structure calculations given in Chapter 4. These calculations show that bonding does occur between titanium d-states and interstitial atom p-states at the expense of bonding between some of the titanium and silicon atoms. In addition, carbon seems to be the most strongly bonded interstitial atom. Knowledge of the exact interstitial content and its effect on bonding is important because Chapters 3 and 5 have shown that interstitial atoms have a marked effect on the thermal expansion and oxidation resistance. As discussed in Chapter 3, all interstitial atoms lower the thermal

  19. Temperature dependence of a microstructured SiC coherent thermal source

    NASA Astrophysics Data System (ADS)

    Hervé, Armande; Drévillon, Jérémie; Ezzahri, Younès; Joulain, Karl; De Sousa Meneses, Domingos; Hugonin, Jean-Paul

    2016-09-01

    By ruling a grating on a polar material that supports surface phonon-polaritons such as silicon carbide (SiC), it is possible to create directional and monochromatic thermal sources. So far, most of the studies have considered only materials with room temperature properties as the ones tabulated in Palik's handbooks. Recently, measurements have provided experimental data of the SiC dielectric function at different temperatures. Here we study, numerically, the effect of the temperature dependence of the dielectric function on the thermal emission of SiC gratings (1D grating, in a first approach), heated at different temperatures. When materials are heated, the position of the grating emissivity peak shifts towards higher wavelength values. A second consequence of the temperature dependence of optical properties is that room temperature designed gratings are not optimal for higher temperatures. However, by modifying the grating parameters, it is possible to find an emission peak, with a maximum of emissivity near 1, for each temperature. We tried first to catch some patterns in the emissivity variation. Then, we obtained a grating, which leads to an optimum emissivity for all available temperature data for SiC.

  20. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2014-01-01

    The impact of additional Pt and Ni monosilicide (NiSi) crystal orientation on channel stress from Ni silicide in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been demonstrated. The channel stress generation mechanism can be explained by the NiSi crystal orientation. In pure Ni silicide films, the channel stress in the p-type substrate is much larger than that in the n-type one, since the NiSi a-axis parallel to the channel direction is strongly aligned on the p-type substrate compared with on the n-type one. On the other hand, in NiPt silicide films, the difference in the channel stress between the p- and n-type substrates is small, because the NiSi crystal orientation on the p-type substrate is similar to that on the n-type one. These results can be explained by the Pt segregation at the interface between the NiSi film and the Si surface. Segregated Pt atoms cause the NiSi b-axis to align normal to the Si(001) surface in the nucleation step owing to the expansion of the NiSi lattice spacing at the NiSi/Si interface. Furthermore, the Pt segregation mechanism is considered to be caused by the grain boundary diffusion in the Ni2Si film during NiSi formation. We confirmed that the grains of Ni2Si on the p-type substrate are smaller than those on the n-type one. The Ni2Si film on the p-type substrate has more grain boundary diffusion paths than that on the n-type one. Therefore, the amount of Pt segregation at the NiSi/Si interface on the p-type substrate is larger than that on the n-type one. Consequently, the number of NiSi grains with the b-axis aligned normal to the Si(001) in the p-type substrate is larger than that in the n-type one. As a result, the channel stress induced by NiPt silicide in PMOS is larger than that in NMOS. According to this mechanism, controlling the Pt concentration at the NiSi/Si interface is one of the key factors for channel stress engineering.

  1. Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH{sub 3}

    SciTech Connect

    Van de Sanden, M.C.M.; Severens, R.J.; Kessels, W.M.M.; Van de Pas, F.; Van Ijzendoorn, L.; Schram, D.C.

    1997-07-01

    The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

  2. A fundamental study of the oxidation behavior of SI primary reference fuels with propionaldehyde and DTBP as an additive

    NASA Astrophysics Data System (ADS)

    Johnson, Rodney

    In an effort to combine the benefits of SI and CI engines, Homogeneous Charge Compression Ignition (HCCI) engines are being developed. HCCI combustion is achieved by controlling the temperature, pressure, and composition of the fuel and air mixture so that autoignition occurs in proper phasing with the piston motion. This control system is fundamentally more challenging than using a spark plug or fuel injector to determine ignition timing as in SI and CI engines, respectively. As a result, this is a technical barrier that must be overcome to make HCCI engines applicable to a wide range of vehicles and viable for high volume production. One way to tailor the autoignition timing is to use small amounts of ignition enhancing additives. In this study, the effect of the addition of DTBP and propionaldehyde on the autoignition behavior of SI primary reference fuels was investigated. The present work was conducted in a new research facility built around a single cylinder Cooperative Fuels Research (CFR) octane rating engine but modified to run in HCCI mode. It focused on the effect of select oxygenated hydrocarbons on hydrocarbon fuel oxidation, specifically, the primary reference fuels n-heptane and iso-octane. This work was conducted under HCCI operating conditions. Previously, the operating parameters for this engine were validated for stable combustion under a wide range of operating parameters such as engine speeds, equivalence ratios, compression ratios and inlet manifold temperature. The stable operating range under these conditions was recorded and used for the present study. The major focus of this study was to examine the effect of the addition of DTBP or propionaldehyde on the oxidation behavior of SI primary reference fuels. Under every test condition the addition of the additives DTBP and propionaldehyde caused a change in fuel oxidation. DTBP always promoted fuel oxidation while propionaldehyde promoted oxidation for lower octane number fuels and delayed

  3. Elongated Quantum Dots of Ge on Si Growth Kinetics Modeling with Respect to the Additional Energy of Edges

    NASA Astrophysics Data System (ADS)

    Lozovoy, K. A.; Pishchagin, A. A.; Kokhanenko, A. P.; Voitsekhovskii, A. V.

    2016-08-01

    In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of surface energy, additional edge energy, elastic strain relaxation, and decrease in the atoms attraction to substrate. With the help of well-known model based on the generalization of classical nucleation theory it was shown that elongated islands emerge later than pyramidal clusters. Calculations of QDs surface density and size distribution function for wedge-like clusters with different length to width ratio were performed. The absence of special geometry of islands for which surface density and average size of islands reach points of extremum that was predicted earlier by the model not taking into account energy of edges was revealed when considering the additional contribution of edge formation energy.

  4. Fabrication and thermal shock resistance of HfB2-SiC composite with B4C additives

    NASA Astrophysics Data System (ADS)

    Weng, L.; Han, W.; Hong, Ch.

    2011-12-01

    A HfB2 based ceramic matrix composite containing 20 vol.% SiC particles with 2 vol.% B4C as sintering additives was fabricated by hot-pressed sintering. The microstructure and properties, especially the thermal shock resistance of the composite were investigated. Results showed that the addition of B4C improved the powder sinterability and led to obtaining nearly full dense composite. The flexural strength and fracture toughness of the composite were 771 MPa and 7.06 MPam1/2, respectively. The thermal shock resistance tests indicated that the residual strength decreased significantly when the thermal shock temperature difference was higher than 600 °C. The large number of microcracks on the sample surface was the main reason for the catastrophic failure.

  5. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  6. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    PubMed

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-01

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  7. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    PubMed

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-01

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  8. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Kakuta, Akira; Moronuki, Nobuyuki; Furukawa, Yuji

    Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.

  9. Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

    PubMed

    Gui, Gui; Zhang, Kan; Blanchard, James P; Ma, Zhenqiang

    2016-01-01

    We have investigated the performance of 4H-SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p-n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p-n junction structure includes a p+ layer, a p- layer, an n+ layer, and an n- layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p-n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p- layer increase, whereas it is independent of the total depth of the p-n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p-n junction betavoltaic cell with a thicker and heavily doped p- layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. PMID:26583261

  10. Architecture of source-drain cavity of a p-channel field effect transistor for embedding with epitaxial SiGe for enhanced performance

    NASA Astrophysics Data System (ADS)

    Parikh, A.; Cai, Z.

    2011-09-01

    Increase in power consumption in field effect transistors has been curtailed in recent years by introduction of mechanical stress to achieve device speed gain over and above the traditional speed vs. power tradeoffs achieved only by scaling gate lengths. Increasingly, the source-drain region of p-channel field effect transistors are etched and epitaxial SiGe re-grown in the cavity to enhance hole mobility. However, the addition of stress as a method to improve performance would add to the process variability beyond the traditional source of lithography, now related to structure and dimension of the cavity and composition of SiGe. In this paper, compressive stress induced in the channel was directly measured using synchrotron x-ray diffraction. The samples were a set of gratings designed to map the transistor performance with varying design space. The x-ray beam was systematically stepped across the gratings at an interval of 200 nm and diffraction data collected to assess the extent of stress field. Diffraction space maps were created around the symmetric (004) and asymmetric (115) planes. Strain was deduced from Si peak shift and stress calculated from the Si elastic constants. Diffraction space maps around the asymmetric plane were used to deduce the mechanism and subsequent relaxation of strain. Diffraction data collected with x-ray beam placement close to the Si-SiGe vertical interface provided information from lateral SiGe epitaxy on the (110) plane. The presence of strained SiGe peak exhibiting tilt as well as "relaxed" SiGe peak surrounded by diffuse scattering due to dislocations were observed. The use of non-selective etch process resulted in cavity formation with multiple crystallographic planes. The subsequent relaxation mechanism that was dependent on the formation of misfit dislocations was perturbed, possibly due to pinning of the dislocations at the intersection of two crystallographic planes and served as the source of variability. Measured stress

  11. Numerical investigation of FAST powder consolidation of Al2O3 and additive free β-SiC

    NASA Astrophysics Data System (ADS)

    Allen, J. B.; Cornwell, C. F.; Carlson, T.; Marsh, C. P.

    2015-02-01

    In this work we examine ceramic synthesis through powder consolidation and the field assisted sintering technique. In particular, we investigate the sintering of Al2O3 and additive free β -SiC from both an experimental and numerical perspective. For the numerical model, the continuum theory of sintering model is employed, and the densification mechanisms corresponding to power law creep and grain boundary diffusion are considered. Experiments are used for comparison and validation purposes. The results indicate that in general, the densification kinetics simulated by the numerical model compare favorably with the experimental results. Parametric studies involving initial grain size, heating rate, and applied stress are also examined using the numerical model, and confirm many of the expected results from previous research, including increased densification due to higher heating rates, smaller grain sizes, and increased applied loading conditions.

  12. SiC detectors for radiation sources characterization and fast plasma diagnostic

    NASA Astrophysics Data System (ADS)

    Cannavò, A.; Torrisi, L.

    2016-09-01

    Semiconductor detectors based on SiC have been investigated to characterize the radiations (photons and particles) emitted from different sources, such as radioactive sources, electron guns, X-ray tubes and laser-generated plasmas. Detectors show high response velocity, low leakage current, high energy gap and high radiation hardness. Their high detection efficiency permits to use the detectors in spectroscopic mode and in time-of-flight (TOF) approach, generally employed to monitor low and high radiation fluxes, respectively. Using the laser start signal, they permit to study the properties of the generated plasma in vacuum by measuring accurately the particle velocity and energy using pulsed lasers at low and high intensities. Possible applications will be reported and discussed.

  13. Deposition of SiNx Thin Film Using µ-SLAN Surface Wave Plasma Source

    NASA Astrophysics Data System (ADS)

    Xu, Ying-Yu; Ogishima, Takuya; Korzec, Dariusz; Nakanishi, Yoichiro; Hatanaka, Yoshinori

    1999-07-01

    A slot antenna (µ-SLAN) microwave surface wave plasma source was developed for SiNx thin film preparation. A µ-SLAN-produced argon plasma density up to 1011 cm-3 has been achieved at an axial position of about 43 cm from the ring cavity at a microwave power of 500 W and a chamber pressure of 0.5 Torr. High-speed deposition of SiNx thin film was performed using the µ-SLAN-assisted remote plasma enhanced chemical vapor deposition method incorporating tris(dimethylamino)silane (TDMAS) as a monomer source. The film deposition rate increased rapidly up to 270 nm/min when some hydrogen was mixed in the nitrogen gas and increased from 0 to 1%. A further increase of hydrogen content, however, only slightly increased the film deposition rate. A high deposition rate of 280 nm/min was obtained when 15% hydrogen was mixed in the nitrogen gas, with the chamber pressure and microwave power at 1.5 Torr and 500 W, respectively.

  14. Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

    NASA Astrophysics Data System (ADS)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2016-05-01

    Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

  15. Microstructure and environmental stability of Si3N4 sintered with mixed Y2O3, MgO, and Cr2O3 additives

    SciTech Connect

    Plucknett, K.P.; Butler, N.D.; Lewis, M.H.

    1991-10-01

    The microstructural evolution of an Si3N4 ceramic pressureless sintered with Y2O3, MgO, and Cr2O3 additives has been studied. Two basic processing variables were investigated: sintered Si3N4 (SSN), starting with Si3N4 powder, and sintered reaction bonded Si3N4 (SRBSN), starting with silicon powder. Glass-encapsulated hot isostatic pressing of SSN-type preforms was also examined, resulting in a finer grain structure than the pressureless sintered equivalent. The lower oxygen content of the SRBSN materials had only a minimal effect upon the observed microstructure relative to SSN materials. However, considerable variation in oxidation behavior was apparent, with partial matrix crystallization to Y2Si2O7 in the SSN ceramic and crystallization to a mixed cation phase in SRBSN variants. 25 refs.

  16. Effect of tin addition on the distribution of phosphorus and metallic impurities in Si-Al alloys

    NASA Astrophysics Data System (ADS)

    Tang, Tianyu; Lai, Huixian; Sheng, Zhilin; Gan, Chuanhai; Xing, Pengfei; Luo, Xuetao

    2016-11-01

    Metallurgical grade silicon was purified through solvent refining method by adding tin to the Si-Al alloy. The distribution of phosphorus and metallic impurities in the resulting Si-Al-Sn melts was investigated. Compared with the primary Si and the eutectic αAl+Si, the phosphorus and metallic impurities were more distinctly distributed in the βSn phase, which was always accompanied by needle-like intermetallic β-Al5SiFe compounds. To improve the phosphorus and metallic impurity removal ratios, Si-Al-Sn ternary alloys with different composition were investigated. The phosphorus removal ratio increased with the aluminum and tin content in the Si-Al-Sn ternary alloy. Compared to increasing the Al content and keeping the Si/Sn ratio fixed, the impurity removal ratios were higher when the Sn content was increased to the same mass percentage and the Si/Al ratio was kept fixed in the Si-Al-Sn melt.

  17. Effects of h-BN addition on microstructures and mechanical properties of β-CaSiO3 bioceramics.

    PubMed

    Pan, Ying; Yao, Dongxu; Zuo, Kaihui; Xia, Yongfeng; Yin, Jinwei; Liang, Hanqin; Zeng, Yuping

    2016-09-01

    The main purpose of this study consists in investigating the effects of h-BN addition on the sinterability of β-CaSiO3 (β-CS) bioceramics. β-CS bioceramics with different contents of h-BN were prepared at the sintering temperature ranging from 800°C to 1100°C. The results showed that h-BN can be successfully used as sintering additive by being oxidized to form low melting point B2O3 related glassy phase and enhanced the flexural strength by the formation of rod-like β-CS grains. β-CS bioceramics with 1wt% h-BN sintered at 1000°C revealed flexural strength and fracture toughness of 182.2MPa and 2.4MPam(1/2) respectively, which were much higher than that of pure β-CS bioceramics (30.2MPa, 0.53MPam(1/2)) fabricated in the same processing condition. PMID:27227289

  18. Effect of 1-olefin addition on supercritical phase Fischer-Tropsch synthesis over Co/SiO{sub 2} catalyst

    SciTech Connect

    Yan, S.R.; Zhang, Z.X.; Zhou, J.L.; Fan, L.; Fujimoto, Kaoru

    1997-12-31

    Hydrocarbon wax produced by Fischer-Tropsch Synthesis (FTS) has been used in many fields for its high quality, such as high melting point, high hardness value, low viscosity, being nitrogen sulfur and aromatics-free. Selective synthesis of FT wax has generated great interest, especially in the case of lower oil-prices. As a polymerization process, however, in conventional gas phase FTS, selectivity of wax is constrained by the Anderson-Schultz-Flory (ASF) kinetics. Supercritical phase Fischer-Tropsch synthesis co-fed with 1-tetradecene over Co/SiO{sub 2} catalysts has been carried out. It was found that added 1-tetradecene could reach the surface of the catalyst by the aid of a supercritical fluid, and participate in the chain growth process there, which was indistinguishable from the original chain propagation. Consequently, the yield of hydrocarbons larger than C{sub 14} increased significantly, while the selectivity of C{sub 1}-C{sub 13} decreased correspondingly, which made the carbon number distribution deviate from ASF kinetics drastically. In addition, the analytical results of wax showed that average molecular weight and degree of saturation of the wax increased, while the content of oxygenates in the wax decreased due to the addition of 1-tetradecene.

  19. The Effect of Crystallinity of Carbon Source on Mechanically Activated Carbothermic Synthesis of Nano-Sized SiC Powders

    NASA Astrophysics Data System (ADS)

    Moshtaghioun, B. M.; Monshi, A.; Abbasi, M. H.; Karimzadeh, F.

    2013-02-01

    The relevance of the structure of carbon materials and milling on the carbothermic reduction of silica to produce nano-sized silicon carbide (SiC) was studied. Graphite (crystalline) and metallurgical coke (mainly amorphous) were chosen as carbon precursors that were mixed with amorphous pure nano-sized SiO2 and milled for different times. The SiC yield at 1450 °C for l h was influenced by the degree of milling. Extending the milling time increased SiC formation in both cases. Although some extensive milling converted both sources of carbon into amorphous phase, the amount of synthesized SiC from graphite was about 4.5-3 times higher than coke with increased extent of milling. Graphite is converted from stable crystalline state into the amorphous phase, so it absorbs more activation energy of milling and fresher active centers are created, while the already amorphous coke absorbs less energy and thus less fresh active centers are created. This energy difference acts as a driving force, resulting in higher yield of nano-sized SiC when graphite is used as carbon source.

  20. Effect of Combined Addition of Cu and Aluminum Oxide Nanoparticles on Mechanical Properties and Microstructure of Al-7Si-0.3Mg Alloy

    NASA Astrophysics Data System (ADS)

    Choi, Hongseok; Jones, Milton; Konishi, Hiromi; Li, Xiaochun

    2012-02-01

    In this study, an ultrasonic cavitation based dispersion technique was used to fabricate Al-7Si-0.3Mg alloyed with Cu and reinforced with 1 wt pct Al2O3 nanoparticles, in order to investigate their influence on the mechanical properties and microstructures of Al-7Si-0.3Mg alloy. The combined addition of 0.5 pct Cu with 1 pct Al2O3 nanoparticles increased the yield strength, tensile strength, and ductility of the as-cast Al-7Si-0.3Mg alloy, mostly due to grain refinement and modification of the eutectic Si and θ-CuAl2 phases. Moreover, Al-7Si-0.3Mg-0.5Cu-1 pct Al2O3 nanocomposites after T6 heat treatment showed a significant enhancement of ductility (increased by 512 pct) and tensile strength (by 22 pct). The significant enhancement of properties is attributed to the suppression of pore formation and modification of eutectic Si phases due to the addition of Al2O3 nanoparticles. However, the yield strength of the T6 heat-treated nanocomposites was limited in enhancement due to a reaction between Mg and Al2O3 nanoparticles.

  1. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Effect of Yttrium Addition on Glass Forming Ability of ZrCuAlSi Alloy

    NASA Astrophysics Data System (ADS)

    Zhang, Bac-Qing; Zhang, Xin-Yu; Li, Gong; Sun, Bao-Ru; Fan, Chang-Zeng; Zhan, Zai-Ji; Liu, Ri-Ping; Wang, Wen-Kui

    2009-06-01

    The effect of yttrium addition on glass formation of a ZrCuAlSi alloy is investigated. The maximum diameter 8mm of the glassy rods for (Zr46.3Cu43.3Al8.9Si1.5)100-xYx alloy with x = 2.5 is obtained by copper mould casting. Apparent enhancement of the glass formation ability is found with addition of yttrium, mainly due to the purification of the alloy melt and the suppression of formation of the primary phases by yttrium.

  2. A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing

    SciTech Connect

    Chinthavali, Madhu Sudhan; Ayers, Curtis William; Campbell, Steven L; Wiles, Randy H; Ozpineci, Burak

    2014-01-01

    With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. This paper focuses on the development of a 10-kW all SiC inverter using a high power density, integrated printed metal power module with integrated cooling using additive manufacturing techniques. This is the first ever heat sink printed for a power electronics application. About 50% of the inverter was built using additive manufacturing techniques.

  3. Evidence for an Additional Heat Source in the Warm Ionized Medium of Galaxies.

    PubMed

    Reynolds; Haffner; Tufte

    1999-11-01

    Spatial variations of the [S ii]/Halpha and [N ii]/Halpha line intensity ratios observed in the gaseous halo of the Milky Way and other galaxies are inconsistent with pure photoionization models. They appear to require a supplemental heating mechanism that increases the electron temperature at low densities, ne. This would imply that in addition to photoionization, which has a heating rate per unit volume proportional to n2e, there is another source of heat with a rate per unit volume proportional to a lower power of ne. One possible mechanism is the dissipation of interstellar plasma turbulence, which, according to Minter & Spangler, heats the ionized interstellar medium in the Milky Way at a rate of approximately 1x10-25ne ergs cm-3 s-1. If such a source were present, it would dominate over photoionization heating in regions where ne less, similar0.1 cm-3, producing the observed increases in the [S ii]/Halpha and [N ii]/Halpha intensity ratios at large distances from the galactic midplane as well as accounting for the constancy of [S ii]/[N ii], which is not explained by pure photoionization. Other supplemental heating sources, such as magnetic reconnection, cosmic rays, or photoelectric emission from small grains, could also account for these observations, provided they supply approximately 10-5 ergs s-1 per square centimeter of the Galactic disk to the warm ionized medium.

  4. SEI Formation and Interfacial Stability of a Si Electrode in a LiTDI-Salt Based Electrolyte with FEC and VC Additives for Li-Ion Batteries.

    PubMed

    Lindgren, Fredrik; Xu, Chao; Niedzicki, Leszek; Marcinek, Marek; Gustafsson, Torbjörn; Björefors, Fredrik; Edström, Kristina; Younesi, Reza

    2016-06-22

    An electrolyte based on the new salt, lithium 4,5-dicyano-2-(trifluoromethyl)imidazolide (LiTDI), is evaluated in combination with nano-Si composite electrodes for potential use in Li-ion batteries. The additives fluoroethylene carbonate (FEC) and vinylene carbonate (VC) are also added to the electrolyte to enable an efficient SEI formation. By employing hard X-ray photoelectron spectroscopy (HAXPES), the SEI formation and the development of the active material is probed during the first 100 cycles. With this electrolyte formulation, the Si electrode can cycle at 1200 mAh g(-1) for more than 100 cycles at a coulombic efficiency of 99%. With extended cycling, a decrease in Si particle size is observed as well as an increase in silicon oxide amount. As opposed to LiPF6 based electrolytes, this electrolyte or its decomposition products has no side reactions with the active Si material. The present results further acknowledge the positive effects of SEI forming additives. It is suggested that polycarbonates and a high LiF content are favorable components in the SEI over other kinds of carbonates formed by ethylene carbonate (EC) and dimethyl carbonate (DMC) decomposition. This work thus confirms that LiTDI in combination with the investigated additives is a promising salt for Si electrodes in future Li-ion batteries. PMID:27220376

  5. Stabilization of {alpha}-SiAlONs using a rare-earth mixed oxide (RE{sub 2}O{sub 3}) as sintering additive

    SciTech Connect

    Santos, C.; Silva, O.M.M.; Silva, C.R.M.

    2005-07-12

    {alpha}-SiAlONs are commonly produced by liquid phase sintering of Si{sub 3}N{sub 4} with AlN and Y{sub 2}O{sub 3} as additives. The formation of the {alpha}-SiAlONs using a mixed oxide (RE{sub 2}O{sub 3}), containing yttria and rare-earth oxides, as an alternative additive was investigated. Dense {alpha}-SiAlONs were obtained by gas-pressure sintering, starting from {alpha}-Si{sub 3}N{sub 4} and AlN-Y{sub 2}O{sub 3} or AlN-RE{sub 2}O{sub 3} as additives. The mixed oxide powder RE{sub 2}O{sub 3} was characterized by means of high-resolution synchrotron X-ray diffraction and compared to Y{sub 2}O{sub 3}. The X-ray diffraction analysis of the mixed oxide shows a pattern indicating a true solid solution formation. The Rietveld refinement of the crystal structure of the sintered {alpha}-SiAlON using AlN-RE{sub 2}O{sub 3} as additive revealed a similar crystal structure to the {alpha}-SiAlON using AlN-RE{sub 2}O{sub 3} as additive. The comparison of the microstructures of the both {alpha}-SiAlONs produced using pure Y{sub 2}O{sub 3} or RE{sub 2}O{sub 3}, revealed similar grain sizes of about 4.5 {mu}m with aspect ratios of about 5. Both materials show also similar mechanical properties, with hardness of 18.5 GPa and fracture toughness of 5 MPa m{sup 1/2}. It could be, thus, demonstrated that pure Y{sub 2}O{sub 3} can be substituted by the rare-earth solid solution, RE{sub 2}O{sub 3}, in the formation of {alpha}-SiAlONs, presenting similar microstructural and mechanical properties.

  6. Accelerated Source-Encoding Full-Waveform Inversion with Additional Constraints

    NASA Astrophysics Data System (ADS)

    Boehm, C.; Fichtner, A.; Ulbrich, M.

    2014-12-01

    We present a flexible framework of Newton-type methods for constrained full-waveform inversion in the time domain. Our main goal is (1) to incorporate additional prior knowledge by using general constraints on the model parameters and (2) to reduce the computational costs of solving the inverse problem by tailoring source-encoding strategies to Newton-type methods.In particular, we apply the Moreau-Yosida regularization to handle the constraints and use a continuation strategy to adjust the regularization parameter. Furthermore, we propose a semismooth Newton method with a trust-region globalization that relies on second-order adjoints to compute the Newton system with a matrix-free preconditioned conjugate gradient solver. The costs of conventional FWI approaches scale proportionally with the number of seismic sources. Here, source-encoding strategies that trigger different sources simultaneously have been proven to be a successful tool to trade a small loss of information for huge savings of computational time to solve the inverse problem. This is particularly interesting for our setting as one iteration of Newton's methods using the full Hessian is considerably more expensive than quasi-Newton methods like L-BFGS. To this end, we discuss a sample average approximation model that is accelerated by using inexact Hessian information based on mini-batches of the samples. Furthermore, we compare its performance with stochastic descent schemes. Here, the classical stochastic gradient method is accelerated by an L-BFGS preconditioner and moreover, the stability of this stochastic preconditioner is enhanced by using the Hessian instead of only gradient information.Numerical results are presented for problems in geophysical exploration on reservoir-scale.

  7. Simultaneous Observatinos of H2O and SiO Masers Toward Known Extragalactic Water Maser Sources

    NASA Astrophysics Data System (ADS)

    Cho, Se-Hyung; Yoon, Dong-Hwan; Kim, Jaeheon; Byun, Do-Young; Wagner, Jan

    2015-12-01

    We observe ten known 22 GHz H_{2}O maser galaxies during February 19-22, 2011 using the 21 m Tamna telescope of the Korean VLBI Network and a new wide-band digital spectrometer. Simultaneously we searched for 43 GHz SiO v = 1, 2, J = 1-0 maser emission. We detect H_{2}O maser emission towards five sources (M 33, NGC 1052, NGC 1068, NGC 4258, M 82), with non-detections towards the remaining sources (UGC 3193, UGC 3789, Antennae H_{2}O-West, M 51, NGC 6323) likely due to sensitivity. Our 22 GHz spectra are consistent with earlier findings. Our simultaneous 43 GHz SiO maser search produced non-detections, yielding - for the first time - upper limits on the 43 GHz SiO maser emission in these sources at a 3 σ sensitivity level of 0.018 K-0.033 K (0.24 Jy-0.44 Jy) in a 1.75 km s^{-1} velocity resolution. Our findings suggest that any 43 GHz SiO masers in these sources (some having starburst-associated H_{2}O kilomasers) must be faint compared to the 22 GHz H_{2}O maser emission.

  8. Addition of surfactants in ozonated water cleaning for the suppression of functional group formation and particle adhesion on the SiO2 surface

    NASA Astrophysics Data System (ADS)

    Yang, Jahyun; Im, Kyungtaek; Lim, Sangwoo

    2011-04-01

    Various kinds of surfactants were added to a cleaning solution and deionized (DI) water, and their effect on the suppression of organic function group formation and particle adhesion to a SiO2 surface was analyzed using multi-internal reflection Fourier transform infrared spectroscopy. The results implied that attached organic functional groups are affected by the chemical structure of a surfactant in DI water. Furthermore, the addition of anionic glycolic acid ethoxylate 4-tert-butylphenyl ether (GAE4E) is the most effective in terms of preventing organic group attachment and particle adhesion to the SiO2 surface, whether it was added to the cleaning solution or post-cleaning rinse water, with or without polystyrene latex particles. Moreover, it was possible to completely prevent particle adhesion to the SiO2 surface with the proper addition of GAE4E in DIO3 solution.

  9. The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys.

    PubMed

    Gebhardt, T; Music, D; Ekholm, M; Abrikosov, I A; Vitos, L; Dick, A; Hickel, T; Neugebauer, J; Schneider, J M

    2011-06-22

    We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Néel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

  10. Refinement of the Microstructure of Sn-Ag-Bi-In Solder, by Addition of SiC Nanoparticles, to Reduce Electromigration Damage Under High Electric Current

    NASA Astrophysics Data System (ADS)

    Kim, Youngseok; Nagao, Shijo; Sugahara, Tohru; Suganuma, Katsuaki; Ueshima, Minoru; Albrecht, Hans-Juergen; Wilke, Klaus; Strogies, Joerg

    2014-12-01

    The trends of miniaturization, multi-functionality, and high performance in advanced electronic devices require higher densities of I/O gates and reduced area of soldering of interconnections. This increases the electric current density flowing through the interconnections, increasing the risk of interconnection failure caused by electromigration (EM). Accelerated directional atomic diffusion in solder materials under high current induces substantial growth of intermetallic compounds (IMCs) at the anode, and also void and crack formation at the cathode. In the work discussed in this paper, addition of SiC nanoparticles to Sn-Ag-Bi-In (SABI) lead-free solder refined its microstructure and improved its EM reliability under high current stress. Electron backscattering diffraction analysis revealed that the added SiC nanoparticles refined solder grain size after typical reflow. Under current stress, SABI joints with added nano-SiC had lifetimes almost twice as long as those without. Comparison of results from high-temperature aging revealed direct current affected evolution of the microstructure. Observations of IMC growth indicated that diffusion of Cu in the SiC composite solder may not have been reduced. During current flow, however, only narrow voids were formed in solder containing SiC, thus preventing the current crowding caused by bulky voids in the solder without SiC.

  11. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    NASA Astrophysics Data System (ADS)

    Chen, Dongyue; Murakami, Kenta; Dohi, Kenji; Nishida, Kenji; Soneda, Naoki; Li, Zhengcao; Liu, Li; Sekimura, Naoto

    2015-12-01

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe2+ ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si's role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  12. Styrofoam Debris as a Source of Hazardous Additives for Marine Organisms.

    PubMed

    Jang, Mi; Shim, Won Joon; Han, Gi Myung; Rani, Manviri; Song, Young Kyoung; Hong, Sang Hee

    2016-05-17

    There is growing concern over plastic debris and their fragments as a carrier for hazardous substances in marine ecosystem. The present study was conducted to provide field evidence for the transfer of plastic-associated chemicals to marine organisms. Hexabromocyclododecanes (HBCDs), brominated flame retardants, were recently detected in expanded polystyrene (styrofoam) marine debris. We hypothesized that if styrofoam debris acts as a source of the additives in the marine environment, organisms inhabiting such debris might be directly influenced by them. Here we investigated the characteristics of HBCD accumulation by mussels inhabiting styrofoam. For comparison, mussels inhabiting different substrates, such as high-density polyethylene (HDPE), metal, and rock, were also studied. The high HBCD levels up to 5160 ng/g lipid weight and the γ-HBCD dominated isomeric profiles in mussels inhabiting styrofoam strongly supports the transfer of HBCDs from styrofoam substrate to mussels. Furthermore, microsized styrofoam particles were identified inside mussels, probably originating from their substrates.

  13. Styrofoam Debris as a Source of Hazardous Additives for Marine Organisms.

    PubMed

    Jang, Mi; Shim, Won Joon; Han, Gi Myung; Rani, Manviri; Song, Young Kyoung; Hong, Sang Hee

    2016-05-17

    There is growing concern over plastic debris and their fragments as a carrier for hazardous substances in marine ecosystem. The present study was conducted to provide field evidence for the transfer of plastic-associated chemicals to marine organisms. Hexabromocyclododecanes (HBCDs), brominated flame retardants, were recently detected in expanded polystyrene (styrofoam) marine debris. We hypothesized that if styrofoam debris acts as a source of the additives in the marine environment, organisms inhabiting such debris might be directly influenced by them. Here we investigated the characteristics of HBCD accumulation by mussels inhabiting styrofoam. For comparison, mussels inhabiting different substrates, such as high-density polyethylene (HDPE), metal, and rock, were also studied. The high HBCD levels up to 5160 ng/g lipid weight and the γ-HBCD dominated isomeric profiles in mussels inhabiting styrofoam strongly supports the transfer of HBCDs from styrofoam substrate to mussels. Furthermore, microsized styrofoam particles were identified inside mussels, probably originating from their substrates. PMID:27100560

  14. Improving High-Temperature Tensile and Low-Cycle Fatigue Behavior of Al-Si-Cu-Mg Alloys Through Micro-additions of Ti, V, and Zr

    NASA Astrophysics Data System (ADS)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2015-07-01

    High-temperature tensile and low-cycle fatigue tests were performed to assess the influence of micro-additions of Ti, V, and Zr on the improvement of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in the as-cast condition. Addition of transition metals led to modification of microstructure where in addition to conventional phases present in the Al-7Si-1Cu-0.5Mg base, new thermally stable micro-sized Zr-Ti-V-rich phases Al21.4Si4.1Ti3.5VZr3.9, Al6.7Si1.2TiZr1.8, Al2.8Si3.8V1.6Zr, and Al5.1Si35.4Ti1.6Zr5.7Fe were formed. The tensile tests showed that with increasing test temperature from 298 K to 673 K (25 °C to 400 °C), the yield stress and tensile strength of the present studied alloy decreased from 161 to 84 MPa and from 261 to 102 MPa, respectively. Also, the studied alloy exhibited 18, 12, and 5 pct higher tensile strength than the alloy A356, 354 and existing Al-Si-Cu-Mg alloy modified with additions of Zr, Ti, and Ni, respectively. The fatigue life of the studied alloy was substantially longer than those of the reference alloys A356 and the same Al-7Si-1Cu-0.5Mg base with minor additions of V, Zr, and Ti in the T6 condition. Fractographic analysis after tensile tests revealed that at the lower temperature up to 473 K (200 °C), the cleavage-type brittle fracture for the precipitates and ductile fracture for the matrix were dominant while at higher temperature fully ductile-type fracture with debonding and pull-out of cracked particles was identified. It is believed that the intermetallic precipitates containing Zr, Ti, and V improve the alloy performance at increased temperatures.

  15. Effect of SiC and Graphite Particulates Addition on Wear Behaviour of Al2219 Alloy Hybrid Composites

    NASA Astrophysics Data System (ADS)

    Nagaral, Madeva; Shivananda, B. K.; Jayachandran; Auradi, V.; Kori, S. A.

    2016-09-01

    In this investigation wear behaviour of A12219 alloy reinforced with SiC and graphite particulates were studied. The percentage of silicon carbide and graphite as reinforcements were varied from 2 wt.% to 4 wt.% in steps of 2. Energy dispersive spectroscopy and scanning electron microphotographs were used to confirm the presence of SiC and graphite particulates and its uniform distribution over the aluminum matrix. Wear behaviour of aluminum alloy Al2219 reinforced with silicon carbide and graphite fabricated by stir casting process was investigated. The wear properties of the metal matrix composites were studied by performing dry sliding wear test using a pin-on-disc wear tester. The experiments were conducted at a constant sliding velocity of 1.73m/s over a load of 2kg. The results showed that the wear resistance of Al2219-2%SiC-2% graphite and Al2219-4%SiC-4% graphite composites were better than the unreinforced alloy. The wear in terms of weight loss and wear rate was found to decrease with the increasing the weigh percentages of SiC and graphite. To study the dominant sliding wear mechanism worn surfaces were analyzed using scanning electron microscopy.

  16. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters

    NASA Astrophysics Data System (ADS)

    Youh, Meng-Jey; Tseng, Chun-Lung; Jhuang, Meng-Han; Chiu, Sheng-Cheng; Huang, Li-Hu; Gong, Jyun-An; Li, Yuan-Yao

    2015-06-01

    A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% - 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.

  17. Deposition of SiNx Thin Film Using μ-SLAN Surface Wave Plasma Source

    NASA Astrophysics Data System (ADS)

    Ying-Yu, Xu; Takuya, Ogishima; Dariusz, Korzec; Yoichiro, Nakanishi; Yoshinori, Hatanaka

    1998-10-01

    Remote plasma CVD method has been used in fabrication of high quality thin films. It is a useful method in decreasing damage from ion bombardment and in analysis of film formation mechanism. In our research, as the film deposition rate depends on neutral radical density, hence high-density plasma is needed for high-speed deposition. In this research, a μ-SLAN (Slot ANtenna) microwave surface wave plasma source was adapted for thin film deposition. The μ-SLAN is an efficient plasma generator in which microwave power is coupled from a ring cavity with several slots around quartz discharge tube. We measured parameters of argon plasma along the discharge tube by a double Langmuir probe. The electron density was measured as about 10^11 cm-3 at an axial position of 43 cm from ring cavity, a microwave power of 500 W and a pressure of 0.5 torr. Using μ-SLAN, SiNx thin film was deposited and high deposition rate was obtained. The highest deposition rate of 280 nm/min was obtained for plasma gas containing 15% of hydrogen in nitrogen with the pressure and power of 1.5 torr and 500 W respectively.

  18. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters

    PubMed Central

    Youh, Meng-Jey; Tseng, Chun-Lung; Jhuang, Meng-Han; Chiu, Sheng-Cheng; Huang, Li-Hu; Gong, Jyun-An; Li, Yuan-Yao

    2015-01-01

    A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%. PMID:26042359

  19. Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

    PubMed

    Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

    2015-11-11

    Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

  20. Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties

    SciTech Connect

    Soares, J.A.; Kim, H.; Glass, G.; Desjardins, P.; Greene, J.E.

    1999-03-01

    Arsenic-doped Si(001) layers with concentrations C{sub As} up to 5{times}10{sup 18} cm{sup {minus}3} were grown on Si(001)2{times}1 at temperatures T{sub s}=575{endash}900{degree}C by gas-source molecular-beam epitaxy (GS-MBE) using Si{sub 2}H{sub 6} and AsH{sub 3}. This is almost an order of magnitude higher than the initially reported {open_quotes}maximum attainable{close_quotes} saturated C{sub As} value for GS-MBE from hydride precursors. At constant J{sub AsH{sub 3}}/J{sub Si{sub 2}H{sub 6}}, C{sub As} decreases, while the film growth rate R{sub Si} increases, with T{sub s}. Temperature programmed desorption measurements show that As segregates strongly to the growth surface and that the observed decrease in C{sub As} at high film growth temperatures is primarily due to increasingly rapid arsenic desorption from the segregated layer. Decreasing T{sub s} enhances As incorporation. However, it also results in lower film growth rates due to higher steady-state As surface coverages which, because of the lone-pair electrons associated with each As adatom, decrease the total dangling bond coverage and, hence, the Si{sub 2}H{sub 6} adsorption rate. At constant T{sub s}, C{sub As} increases, while R{sub Si} decreases, with increasing J{sub AsH{sub 3}}/J{sub Si{sub 2}H{sub 6}}. All incorporated As resides at substitutional electrically active sites for concentrations up to 3.8{times}10{sup 18} cm{sup {minus}3}, the highest value yet reported for Si(001):As growth from hydride source gases, and temperature-dependent electron mobilities are equal to those of the best bulk Si:As. {copyright} {ital 1999 American Institute of Physics.}

  1. On the Asymmetric Splitting of CBED HOLZ Lines under the Gate of Recessed SiGe Source/Drain Transistors

    NASA Astrophysics Data System (ADS)

    Benedetti, A.; Bender, H.

    The behaviour of the CBED HOLZ line splitting under the gate of transistor structures with recessed SiGe in the source/drain regions is investigated. Structures with nitride/oxide dummy gates or with poly gates and nitride spacers are studied. In the gate region as well as below the SiGe, splitting of the HOLZ lines in the CBED patterns is observed with increasing magnitude towards the interface. The splitting under the gate shows an asymmetry for equivalent lines which inverts along horizontal cutlines under the gate. The behaviour is explained by a 3-dimensional relaxation of the stress.

  2. Formation of the active surface of Ag/SiO2 catalysts in the presence of FeOx additives

    NASA Astrophysics Data System (ADS)

    Savel'eva, A. S.; Vodyankina, O. V.

    2014-12-01

    Supported FeOx-modified silver catalysts based on commercial silica gel and prepared via impregnation with a solution of Fe- and Ag-containing salts while varying the amount of modifier from 1 to 10 wt % are studied. It is found that the introduction of Fe-containing compounds leads to the distribution of silver in the form of clusters/ions on the surface of SiO2, improving the reducibility of the systems in the H2 TPR mode. After reduction at 800°C, the catalysts containing 10 wt % iron and 5 wt % silver comprise a Fe2SiO4 iron silicate phase.

  3. Effect of C and Ce addition on the microstructure and magnetic property of the mechanically alloyed FeSiBAlNi high entropy alloys

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Axinte, Eugen; Zhao, Zhengfeng; Wang, Yan

    2016-09-01

    The effects of elemental addition, C and Ce, on the microstructure, thermal property and magnetic property of mechanically alloyed FeSiBAlNi (based-W5) high entropy alloys (HEAs) have been investigated in depth in the present work. The amorphous HEAs have been successfully fabricated by mechanical alloying. The results reveal that Ce addition obviously shortens the formation time of fully amorphous phase, therefore leading to the enhanced glass forming ability (GFA) of the based-W5. The final products of as-milled FeSiBAlNiC alloy consist of the main amorphous phase and a small amount of Si nanocrystals. In addition, C and Ce addition are both beneficial to enhance the thermal stability. The coercivity force (Hc) of the tested samples lies in the range of 50-378 Oe, suggesting the semi-hard magnetic property. The saturation magnetization (Ms) becomes decreased with increasing the milling time. C addition effectively increases Ms exhibiting the good magnetic property, however, Ce addition presents the negative effect. It should be noted that the amorphous phase tends to be formed when the radius ratio (Rr) is larger than 1, and the GFA is enhanced with increasing Rr and valence electron concentration.

  4. Development of a Mo-Si-B coating for Nb-based Alloys and the Effects of Zr Additions to Mo-Si-B Coatings for Enhanced Oxidation Protection in Ultra-High Temperature Applications

    NASA Astrophysics Data System (ADS)

    Lu-Steffes, Otto John

    Higher efficiencies and reduced emissions performance of fossil fuel energy systems are achieved with increasing operation temperatures. This increase in operating temperature requires the use of materials with higher melting points such as refractory metal alloys. However, refractory metals suffer from catastrophic oxidation in this type of environment. Thus, oxidation protection for refractory metal alloys is a crucial step in developing next generation ultra-high temperature materials. To meet this challenge, an oxidation resistant coating for Nb based alloys has been designed as well as the incorporation of zirconium into the Mo-Si-B coating to provide further corrosion protection and a reduction in temperature for the underlying multi-layered structure. Niobium samples coated with a Mo-Si-B coating demonstrate enhanced oxidation protection compared to samples only coated with Si-B. Thermogravimetric analysis testing at 1300°C for 24 hours for both the Mo-Si-B coated Nb and Nb-based alloys show enhanced oxidation protection with mass changes of 0.44 mg/cm2 and 0.55 mg/cm2, respectively, compared to the uncoated alloy that had a mass change of 87.6 mg/cm2. To demonstrate the design concept for a coating with thermal barrier behavior, Zr is added to the Mo-Si-B coating through the pack cementation technique. The resulting coating shows that the Zr reacts with the aluminosilica top layer to form Zr silicides and ZrO2. Upon oxidation, the coating forms a mixed top layer composed of borosilica, ZrO2 and ZrSiO 4. Oxidation testing of the Zr modified Mo-Si-B coating exhibits low mass change indicating that the coating provides oxidation protection and that the Zr additions do not interfere with the oxidation protection of the Mo-Si-B coating. Finite element modeling using object oriented finite element analysis of the coating structures yielded an evaluation of the mechanical and thermal properties of the coatings, providing insight into the thermal performance and

  5. Improving the damping ability by the addition of Nano SiO2 to the concrete materials

    NASA Astrophysics Data System (ADS)

    Zou, Dujian; Liu, Tiejun; Teng, Jun

    2009-07-01

    Damping in structures is commonly provided by viscoelastic nonstructural materials. Due to the large volume of structural materials in a structure, the contribution of a structural material to damping can be substantial. In this paper, the experimental investigation on damping ability of concrete materials and its members with Nana SiO2 was carried out by the method of 3-point bending beam damping measurement and cantilever beam free vibration respectively. The microstructure of concrete mix with Nano SiO2 was observed by XRD and SEM, then damping mechanism was discussed. The experimental results show that the damping reinforced effect achieved best with the 4% mixture ratio of Nana SiO2, but the optimal adulteration quantity of Nano SiO2 was 3% of cement weight by the comprehensive consideration of cost, workability, strength and dynamic properties. Nano materials as a mixture increase interfaces, and the non-uniform stress distribution under external force improves frictional damping energy consumption ability of concrete. The experimental results on the damping ratio and the loss tangent of the concrete materials with Nano materials are consistent.

  6. Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

    NASA Astrophysics Data System (ADS)

    Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

    2016-04-01

    Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.

  7. The CERN antiproton source: Controls aspects of the additional collector ring and fast sampling devices

    NASA Astrophysics Data System (ADS)

    Chohan, V.

    1990-08-01

    The upgrade of the CERN antiproton source, meant to gain an order of magnitude in antiproton flux, required the construction of an additional ring to complement the existing antiproton accumulator (AA) and an entire rebuild of the target zone. The AA also needed major modifications to handle the increased flux and perform purely as an accumulator, preceded by collection in the collector ring (AC). The upgrade, known as the ACOL (antiproton collector) project, was approved under strict time and budgetary constraints and the existing AA control system, based on the Proton Synchrotron (PS) Divisional norms of CAMAC and Norsk-Data computers, had to be extended in the light of this. The limited (9 months) installation period for the whole upgrade meant that substantial preparatory and planning activities had to be carried out during the normal running of the AA. Advantage was taken of the upgrade to improve and consolidate the AA. Some aspects of the control system related to this upgrade are discussed together with the integration of new applications and instrumentation. The overall machine installation and running-in was carried out within the defined milestones and the project has now achieved the physics design goals.

  8. Elite sport is not an additional source of distress for adolescents with high stress levels.

    PubMed

    Gerber, Markus; Holsboer-Trachsler, Edith; Pühse, Uwe; Brand, Serge

    2011-04-01

    This study examined whether participation in elite sport interacts with stress in decreasing or increasing symptoms of depression and anxiety among adolescents, and further, whether the interplay between participation in high-performance sport and stress is related to the perceived quality of sleep. 434 adolescents (278 girls, 156 boys; age: M = 17.2 yr.) from 15 "Swiss Olympic Sport Classes" and 9 conventional classes answered a questionnaire and completed a 7-day sleep log. Analyses of covariance showed that heightened stress was related to more depressive symptoms and higher scores for trait-anxiety. Moreover, those classified as having poor sleep by a median split cutoff reported higher levels of depressive symptoms. No significant (multivariate) main effects were found for high-performance sport athletes. Similarly, no significant two- or three-way interaction effects were found. These results caution against exaggerated expectations concerning sport participation as a stress buffer. Nevertheless, participation in high-performance sport was not found to be an additional source of distress for adolescents who reported high stress levels despite prior research that has pointed toward such a relationship.

  9. On the Refinement Mechanism of Silicon in Al-Si-Cu-Zn Alloy with Addition of Bismuth

    NASA Astrophysics Data System (ADS)

    Farahany, Saeed; Ourdjini, Ali; Bakar, Tuty Asma Abu; Idris, Mohd Hasbullah

    2014-01-01

    Obtained results of micro and nano studies reveal that bismuth refines the silicon in which the flake silicon changed to lamellar structure with reduction in twin spacing from 160 to 75 nm. Bismuth segregates towards the inter-dendritic regions and decreases the Al-Si contact angle resulting in suppression of the silicon growth causing refinement of the eutectic structure. Increased recalescence temperature and time confirmed that the refinement effect is attributed to the growth stage.

  10. Response of Mg Addition on the Dendritic Structures and Mechanical Properties of Hypoeutectic Al-10Si (Wt Pct) Alloys

    NASA Astrophysics Data System (ADS)

    Karaköse, Ercan; Yildiz, Mehmet; Keskin, Mustafa

    2016-08-01

    Rapidly solidified hypoeutectic Al-10Si- xMg ( x = 0, 5, 10 wt pct) alloys were produced by the melt-spinning method. The phase composition was identified by X-ray diffractometry, and the microstructures of the alloys were characterized by scanning electron microscopy. The melting characteristics were studied by differential scanning calorimetry and differential thermal analysis under an Ar atmosphere. The mechanical properties of the melt-spun and conventionally solidified alloys were tested by tensile-strength and Vickers microhardness tests. The results illustrate that the cooling rate and solidification time of 89 μm thick melt-spun ribbon were estimated to be 2.97 × 107 K s-1 and 9.31 × 10-6 s, respectively. Nanoscale Si spot particles were observed growing on the surface of the dendritic α-Al matrix and the average sizes of these spots ranged from 10 to 50 nm. The improvement in the tensile properties and microhardness was related to structural refinement and the supersaturated α-Al solid solution; the nanoscale-dispersed Si spot particles made a significant improvement to the mechanical properties of the melt-spun ribbon. Detailed electrical resistivity tests of the ribbons were carried out at temperatures of 300 K to 800 K (27 °C to 527 °C).

  11. Performance of a SiC-nanowire-based explosive-emission pulsed plasma electron source

    NASA Astrophysics Data System (ADS)

    Xun, Tao; Zhang, Jian-de; Li, Gong-yi; Zhao, Xue-long; Hu, Tian-jiao; Yang, Han-wu

    2016-10-01

    Large-scale, well-aligned SiC nanowires (SiCNWs) were developed and their performance as an explosive-emission cathode driven by a high-voltage pulse modulator (450 kV, 120 ns) is reported. The current density was on the order of 1.2 kA/cm2 at an electric field of 90 kV/cm. By comparison with polymer velvets, the SiCNW-based cathodes showed a larger current amplitude, a smaller ignition delay, more uniform surface plasmas, and constant diode impedances during the pulse flattop. The SiCNWs also showed a very small variation in current density in the shot-to-shot mode, which suggests an outstanding advantage in terms of cathode lifetime.

  12. Solar neutrinos and the influences of opacity, thermal instability, additional neutrino sources, and a central black hole on solar models

    NASA Technical Reports Server (NTRS)

    Stothers, R. B.; Ezer, D.

    1972-01-01

    Significant quantities that affect the internal structure of the sun are examined for factors that reduce the temperature near the sun's center. The four factors discussed are: opacity, central black hole, thermal instability, and additional neutrino sources.

  13. Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

    NASA Astrophysics Data System (ADS)

    Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

    2015-01-01

    A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

  14. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

    NASA Astrophysics Data System (ADS)

    Koo, Sangmo; Jang, Hyunchul; Kim, Sun-Wook; Ko, Dae-Hong

    2016-09-01

    The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D) structure.

  15. Microstructural evolution and intermetallic formation in Al-8wt% Si-0.8wt% Fe alloy due to grain refiner and modifier additions

    NASA Astrophysics Data System (ADS)

    Hassani, Amir; Ranjbar, Khalil; Sami, Sattar

    2012-08-01

    An alloy of Al-8wt% Si-0.8wt% Fe was cast in a metallic die, and its microstructural changes due to Ti-B refiner and Sr modifier additions were studied. Apart from usual refinement and modification of the microstructure, some mutual influences of the additives took place, and no mutual poisoning effects by these additives, in combined form, were observed. It was noticed that the dimensions of the iron-rich intermetallics were influenced by the additives causing them to become larger. The needle-shaped intermetallics that were obtained from refiner addition became thicker and longer when adding the modifier. It was also found that α-Al and eutectic silicon phases preferentially nucleate on different types of intermetallic compounds. The more iron content of the intermetallic compounds and the more changes in their dimensions occurred. Formation of the shrinkage porosities was also observed.

  16. Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (111) crystal plane in alkaline KOH solution.

    PubMed

    Jiao, Qingbin; Tan, Xin; Zhu, Jiwei; Feng, Shulong; Gao, Jianxiang

    2016-07-01

    In the silicon wet etching process, the "pseudo-mask" formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (111) crystal plane during silicon wet etching process. The surface roughness Rq is smaller than 15 nm when using ultrasonic agitation and Rq is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5-20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30-50 W/L, the surface roughness Rq is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness Rq is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (111) crystal plane in silicon wet etching process.

  17. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  18. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    NASA Astrophysics Data System (ADS)

    Vanacore, G. M.; Nicotra, G.; Zani, M.; Bollani, M.; Bonera, E.; Montalenti, F.; Capellini, G.; Isella, G.; Osmond, J.; Picco, A.; Boioli, F.; Tagliaferri, A.

    2015-03-01

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  19. Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects

    SciTech Connect

    Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria

    2007-10-15

    We use classical molecular dynamics simulation techniques to study the regrowth behavior of amorphous pockets in Si. We demonstrate that crystallization depends on the morphology of the pocket-crystal interface. Although our simulated amorphous pockets had not any excess nor deficit of atoms with respect to perfect crystal, after regrowth we found residual defects. Most of them are single Si interstitials and vacancies, but also larger defects have been encountered. We have determined their atomic structures and calculated their formation energies. These complexes are more stable than amorphous pockets, and may trigger the formation of extended defects or favor damage accumulation.

  20. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... containing stationary SI internal combustion engines meeting the provisions of 40 CFR part 1054 must meet the... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source......

  1. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... containing stationary SI internal combustion engines meeting the provisions of 40 CFR part 1054 must meet the... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source......

  2. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... containing stationary SI internal combustion engines meeting the provisions of 40 CFR part 1054 must meet the... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source......

  3. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... containing stationary SI internal combustion engines meeting the provisions of 40 CFR part 1054 must meet the... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source......

  4. 40 CFR 60.4247 - What parts of the mobile source provisions apply to me if I am a manufacturer of stationary SI...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... containing stationary SI internal combustion engines meeting the provisions of 40 CFR part 1054 must meet the... provisions apply to me if I am a manufacturer of stationary SI internal combustion engines or a manufacturer... Standards of Performance for Stationary Spark Ignition Internal Combustion Engines Mobile Source......

  5. Formation of deoxidization products in iron ingot by the addition of Al, Si, and/or Mn (M-5)

    NASA Technical Reports Server (NTRS)

    Fukazawa, Akira

    1993-01-01

    The objective of this work is to examine the morphology, composition, and distribution of deoxidation products in iron and iron-10 percent Ni alloy ingots. The deoxidation agents Si, Mn, Al, and their mixtures are selected to investigate the formation mechanism of the deoxidation products and to compare the differences of oxide formation among these agents in microgravity. After the experiment in space, the tested specimens are going to be analyzed by the use of the latest physical and/or chemical analytical equipment, and the information obtained will be a great help for the comprehension of the formation of oxide inclusion in steel for practical purposes, and also for the study of the solidification mechanism theory in the theoretical field.

  6. Impacts of carbon source addition on denitrification and phosphorus uptake in enhanced biological phosphorus removal systems.

    PubMed

    Begum, Shamim A; Batista, Jacimaria R

    2013-01-01

    In this study, simultaneous denitrification and phosphorus (P) removal were investigated in batch tests using nitrified mixed liquor and secondary wastewater influent from a full-scale treatment plant and different levels of acetate and propionate as supplemental carbon sources. Without supplemental carbon source, denitrification occurred at low rate and P release and P uptake was negatively affected (i.e., P removal of only 59.7%). When acetate and propionate were supplied, denitrification and P release occurred simultaneously under anoxic conditions. For acetate and propionate at a C/N stoichiometric ratio of 7.6, P release was negatively affected by denitrification. For acetate, the percent P removal and denitrification were very similar for C/N ratios of 22 (5X stoichiometric) and 59 (10X stoichiometric). For propionate, both percent P removal and denitrification deteriorated for C/N ratios of 22 (5X stoichiometric) and 45 (10X stoichiometric). It was observed that carbon source added in excess to stoichiometric ratio was consumed in the aerobic zone, but P was not taken up. This implies that PAO bacteria may utilize the excess carbon source in the aerobic zone rather than their polyhydroxyalkanoate (PHA) reserves, thereby promoting deterioration of the system.

  7. A FEATURE MOVIE OF SiO EMISSION 20-100 AU FROM THE MASSIVE YOUNG STELLAR OBJECT ORION SOURCE I

    SciTech Connect

    Matthews, L. D.; Greenhill, L. J.; Goddi, C.; Humphreys, E. M. L.; Chandler, C. J.; Kunz, M. W.

    2010-01-01

    We present multi-epoch Very Long Baseline Array imaging of the {sup 28}SiO v = 1 and v = 2, J = 1-0 maser emission toward the massive young stellar object (YSO) Orion Source I. Both SiO transitions were observed simultaneously with an angular resolution of approx0.5 mas (approx0.2 AU for d = 414 pc) and a spectral resolution of approx0.2 km s{sup -1}. Here we explore the global properties and kinematics of the emission through two 19-epoch animated movies spanning 21 months (from 2001 March 19 to 2002 December 10). These movies provide the most detailed view to date of the dynamics and temporal evolution of molecular material within approx20-100 AU of a massive (approx>8 M{sub sun}) YSO. As in previous studies, we find that the bulk of the SiO masers surrounding Source I lie in an X-shaped locus; the emission in the south and east arms is predominantly blueshifted, and emission in the north and west is predominantly redshifted. In addition, bridges of intermediate-velocity emission are observed connecting the red and blue sides of the emission distribution. We have measured proper motions of over 1000 individual maser features and found that these motions are characterized by a combination of radially outward migrations along the four main maser-emitting arms and motions tangent to the intermediate-velocity bridges. We interpret the SiO masers as arising from a wide-angle bipolar wind emanating from a rotating, edge-on disk. The detection of maser features along extended, curved filaments suggests that magnetic fields may play a role in launching and/or shaping the wind. Our observations appear to support a picture in which stars with masses as high as at least 8 M{sub sun} form via disk-mediated accretion. However, we cannot yet rule out that the Source I disk may have been formed or altered following a recent close encounter.

  8. Fracture mode, microstructure and temperature-dependent elastic moduli for thermoelectric composites of PbTe PbS with SiC nanoparticle additions

    SciTech Connect

    Ni, Jennifer E; Case, Eldon D; Hogan, Timophy P.; Trejo, Rosa M; Lara-Curzio, Edgar; Kanatzidis, Mercouri G.

    2013-01-01

    Twenty-six (Pb0.95Sn0.05Te)0.92(PbS)0.08 0.055% PbI2 SiC nanoparticle (SiCnp) composite thermoelectric specimens were either hot pressed or pulsed electric current sintered (PECS). Bloating (a thermally induced increase in porosity, P, for as-densified specimens) was observed during annealing at temperatures >603 K for hot-pressed specimens and PECS-processed specimens from wet milled powders, but in contrast seven out of seven specimens densified by PECS from dry milled powders showed no observable bloating following annealing at temperatures up to 936 K. In this study, bloating in the specimens was accessed via thermal annealing induced changes in (i) porosity measured by scanning electron microscopy on fractured specimen surfaces, (ii) specimen volume and (iii) elastic moduli. The moduli were measured by resonant ultrasound spectroscopy. SiCnp additions (1 3.5 vol.%) changed the fracture mode from intergranular to transgranular, inhibited grain growth, and limited bloating in the wet milled PECS specimens. Inhibition of bloating likely occurs due to cleaning of contamination from powder particle surfaces via PECS processing which has been reported previously in the literature.

  9. Tellurium addition as a solution to improve compactness of ex-situ processed MgB2-SiC superconducting tapes

    NASA Astrophysics Data System (ADS)

    Sandu, V.; Aldica, G.; Popa, S.; Enculescu, Monica; Badica, P.

    2016-06-01

    Ex-situ spark plasma sintering (SPS) was used to obtain dense MgB2-based tapes in a Fe sheath with the starting composition (MgB2)0.975 + (SiC)0.025 + Te0.01. Prior to the SPS procedure of tape formation, the samples were submitted to a series of cold working processes typical for the powder-in-tube technique. The tapes were compared with optimal doped bulk samples (having the same starting composition) and a pristine MgB2 tape. The morphology of the composite samples, the phase structure of both the core and the inner face of the metallic sheath shows the formation of a plethora of traces as a result of interaction between MgB2, additives, and the Fe sheath. Important critical parameters, like critical current density and the irreversibility field, show that there is a field and temperature range where the SiC and Te-added tapes display better critical parameters comparative to either pristine MgB2 tapes in the Fe sheath or SiC and Te doped MgB2 bulk samples.

  10. A study of the influence of mischmetal additions to Al-7Si-0.3Mg (LM 25/356) alloy

    SciTech Connect

    Ravi, M.; Pillai, U.T.S.; Damodaran, A.D.; Dwarakadasa, E.S.

    1996-05-01

    This article deals with the effect of 0.25-1.5 wt pct mischmetal (MM) addition on the mechanical properties, microstructure, electrical conductivity, and fracture behavior of cast Al-7Si-0.3Mg (LM 25/356) alloy. Modification of eutectic silicon by MM is compared with strontium modification in terms of microstructure, mechanical properties, and fading behavior. Loss of magnesium encountered on holding the molten alloy and its resultant effect on mechanical properties of alloys modified with MM and Sr are compared with those in the unmodified alloy.

  11. Solid sampling determination of lithium and sodium additives in microsamples of yttrium oxyorthosilicate by high-resolution continuum source graphite furnace atomic absorption spectrometry

    NASA Astrophysics Data System (ADS)

    Laczai, Nikoletta; Kovács, László; Péter, Ágnes; Bencs, László

    2016-03-01

    Solid sampling high resolution continuum source graphite furnace atomic absorption spectrometry (SS-HR-CS-GFAAS) methods were developed and studied for the fast and sensitive quantitation of Li and Na additives in microsamples of cerium-doped yttrium oxyorthosilicate (Y2SiO5:Ce) scintillator materials. The methods were optimized for solid samples by studying a set of GFAAS conditions (i.e., the sample mass, sensitivity of the analytical lines, and graphite furnace heating programs). Powdered samples in the mass range of 0.099-0.422 mg were dispensed onto graphite sample insertion boats, weighed and analyzed. Pyrolysis and atomization temperatures were optimized by the use of single-element standard solutions of Li and Na (acidified with 0.144 mol/L HNO3) at the Li I 610.353 nm and Na I 285.3013 nm analytical lines. For calibration purposes, the method of standard addition with Li and Na solutions was applied. The correlation coefficients (R values) of the calibration graphs were not worse than 0.9678. The limit of detection for oxyorthosilicate samples was 20 μg/g and 80 μg/g for Li and Na, respectively. The alkaline content of the solid samples were found to be in the range of 0.89 and 8.4 mg/g, respectively. The accuracy of the results was verified by means of analyzing certified reference samples, using methods of standard (solution) addition calibration.

  12. A radio/optical reference frame. 5: Additional source positions in the mid-latitude southern hemisphere

    NASA Technical Reports Server (NTRS)

    Russell, J. L.; Reynolds, J. E.; Jauncey, D. L.; De Vegt, C.; Zacharias, N.; Ma, C.; Fey, A. L.; Johnston, K. J.; Hindsley, R.; Hughes, J. A.

    1994-01-01

    We report new accurate radio position measurements for 30 sources, preliminary positions for two sources, improved radio postions for nine additional sources which had limited previous observations, and optical positions and optical-radio differences for six of the radio sources. The Very Long Baseline Interferometry (VLBI) observations are part of the continuing effort to establish a global radio reference frame of about 400 compact, flat spectrum sources, which are evenly distributed across the sky. The observations were made using Mark III data format in four separate sessions in 1988-89 with radio telescopes at Tidbinbilla, Australia, Kauai, USA, and Kashima, Japan. We observed a total of 54 sources, including ten calibrators and three which were undetected. The 32 new source positions bring the total number in the radio reference frame catalog to 319 (172 northern and 147 southern) and fill in the zone -25 deg greater than delta greater than -45 deg which, prior to this list, had the lowest source density. The VLBI positions have an average formal precision of less than 1 mas, although unknown radio structure effects of about 1-2 mas may be present. The six new optical postion measurements are part of the program to obtain positions of the optical counterparts of the radio reference frame source and to map accurately the optical on to the radio reference frames. The optical measurements were obtained from United States Naval Observatory (USNO) Black Birch astrograph plates and source plates from the AAT, and Kitt Peak National Observatory (KPNO) 4 m, and the European Southern Observatory (ESO) Schmidt. The optical positions have an average precision of 0.07 sec, mostly due to the zero point error when adjusted to the FK5 optical frame using the IRS catalog. To date we have measured optical positions for 46 sources.

  13. Addition of dietary fiber sources to shakes reduces postprandial glycemia and alters food intake.

    PubMed

    Galvão Cândido, Flávia; Silva Ton, Winder Tadeu; Gonçalves Alfenas, Rita de Cássia

    2014-09-15

    Introducción: Obesidad y diabetes de tipo 2 pueden ser controlados por alimentos capaces de modular la ingesta de alimentos y la glucemia. Objetivos: Se investigó si la adición de alimentos fuentes de fibra o fasolamina a batidos puede controlar la ingesta de alimentos y reducir la glucemia posprandial. Métodos: Estudio aleatorizado, simple ciego, de diseño cruzado (ingesta de alimentos:n=22; glucemia:n=10). Cinco batidos con cantidades similares de macronutrientes (C - control batido, SA - salvado de avena batido, L - linaza batido, FB - extracto de frijol blanco batido y PI - harina de plátano no maduro batido) fueron consumidos en cinco días no consecutivos. Las participantes registraron la ingesta de alimentos en las 24 horas subsiguientes. La glucosa en sangre se midió a 0 (inmediatamente antes), 15, 30, 45, 60, 90 y 120 minutos después de la ingestión de cada batido y se calcularon las áreas incrementales bajo las curvas (AIBC). Resultados: En comparación a C, hubo un aumento significativo en la ingesta de fibra después de que el consumo de SA(+17,9g), SL(+19,1g), y PI(+12,6g), y en la grasa después del consumo de SA(+25,4g). Se encontró una reducción no significativa de la ingesta diaria de energía en L (1524kJ, P=0,10) en comparación con C. Hubo una reducción del 43% en el AIBC (P=0,03) en respuesta al consumo PI. Conclusiones: Harina de plátano no maduro reduce la respuesta glucémica posprandial de batidos casi a la mitad. El efecto de salvado de avena y linaza en la ingesta de alimentos requiere mayor investigación en estudios a largo plazo.

  14. Investigating the addition of SiO₂-CaO-ZnO-Na₂O-TiO₂ bioactive glass to hydroxyapatite: Characterization, mechanical properties and bioactivity.

    PubMed

    Yatongchai, Chokchai; Placek, Lana M; Curran, Declan J; Towler, Mark R; Wren, Anthony W

    2015-11-01

    Hydroxyapatite (Ca10(PO4)6(OH)2) is widely investigated as an implantable material for hard tissue restoration due to its osteoconductive properties. However, hydroxyapatite in bulk form is limited as its mechanical properties are insufficient for load-bearing orthopedic applications. Attempts have been made to improve the mechanical properties of hydroxyapatite, by incorporating ceramic fillers, but the resultant composite materials require high sintering temperatures to facilitate densification, leading to the decomposition of hydroxyapatite into tricalcium phosphate, tetra-calcium phosphate and CaO phases. One method of improving the properties of hydroxyapatite is to incorporate bioactive glass particles as a second phase. These typically have lower softening points which could possibly facilitate sintering at lower temperatures. In this work, a bioactive glass (SiO2-CaO-ZnO-Na2O-TiO2) is incorporated (10, 20 and 30 wt%) into hydroxyapatite as a reinforcing phase. X-ray diffraction confirmed that no additional phases (other than hydroxyapatite) were formed at a sintering temperature of 560 ℃ with up to 30 wt% glass addition. The addition of the glass phase increased the % crystallinity and the relative density of the composites. The biaxial flexural strength increased to 36 MPa with glass addition, and there was no significant change in hardness as a function of maturation. The pH of the incubation media increased to pH 10 or 11 through glass addition, and ion release profiles determined that Si, Na and P were released from the composites. Calcium phosphate precipitation was encouraged in simulated body fluid with the incorporation of the bioactive glass phase, and cell culture testing in MC-3T3 osteoblasts determined that the composite materials did not significantly reduce cell viability.

  15. Investigating the addition of SiO₂-CaO-ZnO-Na₂O-TiO₂ bioactive glass to hydroxyapatite: Characterization, mechanical properties and bioactivity.

    PubMed

    Yatongchai, Chokchai; Placek, Lana M; Curran, Declan J; Towler, Mark R; Wren, Anthony W

    2015-11-01

    Hydroxyapatite (Ca10(PO4)6(OH)2) is widely investigated as an implantable material for hard tissue restoration due to its osteoconductive properties. However, hydroxyapatite in bulk form is limited as its mechanical properties are insufficient for load-bearing orthopedic applications. Attempts have been made to improve the mechanical properties of hydroxyapatite, by incorporating ceramic fillers, but the resultant composite materials require high sintering temperatures to facilitate densification, leading to the decomposition of hydroxyapatite into tricalcium phosphate, tetra-calcium phosphate and CaO phases. One method of improving the properties of hydroxyapatite is to incorporate bioactive glass particles as a second phase. These typically have lower softening points which could possibly facilitate sintering at lower temperatures. In this work, a bioactive glass (SiO2-CaO-ZnO-Na2O-TiO2) is incorporated (10, 20 and 30 wt%) into hydroxyapatite as a reinforcing phase. X-ray diffraction confirmed that no additional phases (other than hydroxyapatite) were formed at a sintering temperature of 560 ℃ with up to 30 wt% glass addition. The addition of the glass phase increased the % crystallinity and the relative density of the composites. The biaxial flexural strength increased to 36 MPa with glass addition, and there was no significant change in hardness as a function of maturation. The pH of the incubation media increased to pH 10 or 11 through glass addition, and ion release profiles determined that Si, Na and P were released from the composites. Calcium phosphate precipitation was encouraged in simulated body fluid with the incorporation of the bioactive glass phase, and cell culture testing in MC-3T3 osteoblasts determined that the composite materials did not significantly reduce cell viability. PMID:26116020

  16. Reduction of CO2 diffuse emissions from the traditional ceramic industry by the addition of Si-Al raw material.

    PubMed

    González, I; Barba-Brioso, C; Campos, P; Romero, A; Galán, E

    2016-09-15

    The fabrication of ceramics can produce the emission of several gases, denominated exhaust gases, and also vapours resulting from firing processes, which usually contain metals and toxic substances affecting the environment and the health of workers. Especially harmful are the diffuse emissions of CO2, fluorine, chlorine and sulphur from the ceramics industry, which, in highly industrialized areas, can suppose an important emission focus of dangerous effects. Concerning CO2, factories that use carbonate-rich raw materials (>30% carbonates) can emit high concentrations of CO2 to the atmosphere. Thus, carbonate reduction or substitution with other raw materials would reduce the emissions. In this contribution, we propose the addition of Al-shales to the carbonated ceramic materials (marls) for CO2 emission reduction, also improving the quality of the products. The employed shales are inexpensive materials of large reserves in SW-Spain. The ceramic bodies prepared with the addition of selected Al-shale to marls in variable proportions resulted in a 40%-65% CO2 emission reduction. In addition, this research underlines at the same time that the use of a low-price raw material can also contribute to obtaining products with higher added value.

  17. Impacts of Additional HONO Sources on Concentrations and Deposition of NOy in the Beijing-Tianjin-Hebei Region of China

    NASA Astrophysics Data System (ADS)

    Li, Ying; An, Junling; Kajino, Mizuo; Li, Jian; Qu, Yu

    2015-04-01

    Reactive nitrogen-containing compounds (NOy) are involved in many important chemical processes in the atmosphere, including aerosol formation as well as ozone (O3) production and destruction. As NOy deposition was increasing rapidly in China during 1980s ~ 2000s, great effort is urgently needed to reduce N deposition. HONO, an important component of NOy, is a significant precursor of the hydroxyl radical (OH) that drives the formation of O3 and fine particles (PM2.5). Nevertheless, the detailed formation mechanisms of HONO and strength of its sources remain unclear. Unknown HONO sources and their potential impacts on air quality have gained extensive interests but to our current knowledge, the impact of HONO sources on regional-scale deposition of NOy has not been quantified up to date. The goal of this work is to evaluate the effects of the additional HONO sources on concentrations and deposition of individual NOy species as well as the NOy budget in the northern Chinese regions being affected by heavy pollution. Simulations of HONO contributions over Beijing-Tianjin-Hebei region (BTH) during summer and winter periods of 2007 using the fully coupled Weather Research and Forecasting /Chemistry (WRF/Chem) model are performed by including three additional HONO sources: 1) the reaction of photo-excited nitrogen dioxide (NO2*) with water vapor, 2) NO2 heterogeneous reaction at the aerosol surfaces, and 3) HONO emissions. The model results show that the three additional HONO sources produce a 20%~40% (> 100%) increase in monthly-mean OH concentrations in many urban areas in August (February), leading to a 10%~40% (10%~100%) variation in monthly-mean concentrations of NOx, nitrate and PAN, a 5%~10% (10%~40%) increase in the total dry deposition of NOy, and an enhancement of 1.4 Gg N (1.5 Gg N) in the total of dry and wet deposition of NOy over this region in August (February). These results suggest that the additional HONO sources aggravate regional-scale acid deposition

  18. Wood decomposition in Amazonian hydropower reservoirs: An additional source of greenhouse gases

    NASA Astrophysics Data System (ADS)

    Abril, Gwenaël; Parize, Marcelo; Pérez, Marcela A. P.; Filizola, Naziano

    2013-07-01

    Amazonian hydroelectric reservoirs produce abundant carbon dioxide and methane from large quantities of flooded biomass that decompose anaerobically underwater. Emissions are extreme the first years after impounding and progressively decrease with time. To date, only water-to-air fluxes have been considered in these estimates. Here, we investigate in two Amazonian reservoirs (Balbina and Petit Saut) the fate of above water standing dead trees, by combining a qualitative analysis of wood state and density through time and a quantitative analysis of the biomass initially flooded. Dead wood was much more decomposed in the Balbina reservoir 23 years after flooding than in the Petit Saut reservoir 10 years after flooding. Termites apparently played a major role in wood decomposition, occurring mainly above water, and resulting in a complete conversion of this carbon biomass into CO2 and CH4 at a timescale much shorter than reservoir operation. The analysis of pre-impounding wood biomass reveals that above-water decomposition in Amazonian reservoirs is a large, previously unrecognized source of carbon emissions to the atmosphere, representing 26-45% of the total reservoir flux integrated over 100 years. Accounting for both below- and above-water fluxes, we could estimate that each km2 of Amazonian forest converted to reservoir would emit over 140 Gg CO2-eq in 100 years. Hydropower plants in the Amazon should thus generate 0.25-0.4 MW h per km2 flooded area to produce lower greenhouse gas emissions than gas power plants. They also have the disadvantage to emit most of their greenhouse gases the earliest years of operation.

  19. Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

    NASA Astrophysics Data System (ADS)

    Wu, Mingzhong; Tian, Xiubo; Li, Muqin; Gong, Chunzhi; Wei, Ronghua

    2016-07-01

    Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at -1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to -500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C2H2 and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H3/E2 and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this paper, the effects of the sample bias voltage on the film properties are discussed in detail and the optimal bias voltage is presented.

  20. Source Distribution Method for Unsteady One-Dimensional Flows With Small Mass, Momentum, and Heat Addition and Small Area Variation

    NASA Technical Reports Server (NTRS)

    Mirels, Harold

    1959-01-01

    A source distribution method is presented for obtaining flow perturbations due to small unsteady area variations, mass, momentum, and heat additions in a basic uniform (or piecewise uniform) one-dimensional flow. First, the perturbations due to an elemental area variation, mass, momentum, and heat addition are found. The general solution is then represented by a spatial and temporal distribution of these elemental (source) solutions. Emphasis is placed on discussing the physical nature of the flow phenomena. The method is illustrated by several examples. These include the determination of perturbations in basic flows consisting of (1) a shock propagating through a nonuniform tube, (2) a constant-velocity piston driving a shock, (3) ideal shock-tube flows, and (4) deflagrations initiated at a closed end. The method is particularly applicable for finding the perturbations due to relatively thin wall boundary layers.

  1. [Study on degradation of polycyclic aromatic hydrocarbons (PAHs) with different additional carbon sources in aged contaminated soil].

    PubMed

    Yin, Chun-Qin; Jiang, Xin; Wang, Fang; Wang, Cong-Ying

    2012-02-01

    This study was conducted with different additional carbon sources (such as: glucose, DL-malic acid, citrate, urea and ammonium acetate) to elucidate the degradation of polycyclic aromatic hydrocarbons (PAHs) in aged contaminated soil under an indoor simulation experiment. The results showed that the quantity of CO2 emission in different additional carbon sources treatments was obviously much more than that of check treatment in the first week, and the quantity of CO2 emission in DL-malic acid treatment was the largest. The average CO2 production decreased in an order urea > glucose approximately citrate approximately DL-malic acid approximately ammonium acetate > check. Meanwhile, the amount of volatized PAHs in applied carbon sources treatments was significantly less than that in check treatment. The amount of three volatized PAHs decreased in an order phenanthrene > fluoranthene > benzo(b)fluoranthene. Compared with the check treatment, the average degradation rates of the three PAHs were significantly augmented in the supplied carbon sources treatments, in which rates of the three PAHs were much higher in DL-malic acid and urea treatments than those in other treatments. The largest proportion of residual was benzo(b)fluoranthene (from 72% to 81%) among three PAHs compounds, followed by fluoranthene (from 53% to 70% ) and phenanthrene (from 27% to 44%).

  2. A source-side injection erasable programmable read-only-memory (SI-EPROM) device

    NASA Astrophysics Data System (ADS)

    Wu, A. T.; Chan, T. Y.; Ko, P. K.; Hu, C.

    1986-09-01

    A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source. At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM has shown 10-microsec programming speed at a drain voltage of 5 V.

  3. Effect of CeO2, MgO and Y2O3 additions on the sinterability of a milled Si3N4 with 14.5 wt% SiO2

    NASA Technical Reports Server (NTRS)

    Arias, A.

    1981-01-01

    The sinterability of alpha Si3N4 with 0-5.07 equivalent per cent of CeO2, MgO, or Y2O3 has been studied in the temperature range 1650-1820 C by density measurements and X-ray diffraction analysis. Maximum densities were obtained in the range 1765-1820 C and were 99.6% of theoretical with 2.5% CeO2; 98.5% of theoretical with 1.24 to 1.87% MgO, and 99.2% of theoretical with 2.5% Y2O3. Densities 94% or more of theoretical value were obtained with as little as 0.62 equivalent per cent additive.

  4. Effect of powder characteristics on gas-pressure sintering of Si{sub 3}N{sub 4} with rare earth additives

    SciTech Connect

    Tiegs, T.N.; Nunn, S.D.; Walls, C.A.; Barker, D.; Davisson, C.; Jones, P.J.

    1993-09-01

    Several Si{sub 3}N{sub 4} powders, synthesized by various methods and having different surface areas, oxygen contents and impurity levels, were examined. During early stage densification, all powders showed similar shrinkage with the diimide ederived powder exhibiting delayed {alpha}/{beta} transformation compared to the other powders. The diimide and gas-phase derived powders achieved the highest final densities. Improved densification was observed by increasing the oxygen content and this also resulted in high toughness for some materials with rare earth apatite additives. However, the increased oxygen resulted in reduced high temperature strength. Fracture toughnesses (K{sub Ic}) up to 10 MPa{radical}m were obtained for some compositions.

  5. Effects of Ce and Si additions to CoNiCrAlY bond coat materials on oxidation behavior and crack propagation of thermal barrier coatings

    NASA Astrophysics Data System (ADS)

    Ogawa, K.; Ito, K.; Shoji, T.; Seo, D. W.; Tezuka, H.; Kato, H.

    2006-12-01

    In thermal barrier coating (TBC) systems, thermally grown oxide (TGO) forms at the interface between the top coat and the bond coat (BC) during service. Delamination or spallation at the interface occurs by the TGO formation and growth. Therefore, modifications of the BC materials are one means to inhibit the TGO formation and to improve the crack resistance of TBCs. In this study, morphologies of TGO were controlled by using Ce and Si additions to conventional CoNiCrAlY BC material. The evaluation of the crack resistance was carried out using acoustic emission methods under pure bending conditions. As a result, when the BCs of TBCs with Ce added were aged at 1373 K over 10 h, the morphologies of the TGO were changed drastically. The BC materials of TBCs coated with Ce added indicated an improved crack resistance with high-temperature exposure. It is expected that the morphologies can improve the crack resistance of TBCs.

  6. Metastable Defect Formation at Microvoids Identified as a Source of Light-Induced Degradation in a-Si :H

    NASA Astrophysics Data System (ADS)

    Fehr, M.; Schnegg, A.; Rech, B.; Astakhov, O.; Finger, F.; Bittl, R.; Teutloff, C.; Lips, K.

    2014-02-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si :H), known as the Staebler-Wronski effect, has been studied by time-domain pulsed electron-paramagnetic resonance. Electron-spin echo relaxation measurements in the annealed and light-soaked state revealed two types of defects (termed type I and II), which can be discerned by their electron-spin echo relaxation. Type I exhibits a monoexponential decay related to indirect flip-flop processes between dipolar coupled electron spins in defect clusters, while the phase relaxation of type II is dominated by H1 nuclear spin dynamics and is indicative for isolated spins. We propose that defects are either located at internal surfaces of microvoids (type I) or are isolated and uniformly distributed in the bulk (type II). The concentration of both defect type I and II is significantly higher in the light-soaked state compared to the annealed state. Our results indicate that in addition to isolated defects, defects on internal surfaces of microvoids play a role in light-induced degradation of device-quality a-Si :H.

  7. Metastable defect formation at microvoids identified as a source of light-induced degradation in a-Si:H.

    PubMed

    Fehr, M; Schnegg, A; Rech, B; Astakhov, O; Finger, F; Bittl, R; Teutloff, C; Lips, K

    2014-02-14

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H), known as the Staebler-Wronski effect, has been studied by time-domain pulsed electron-paramagnetic resonance. Electron-spin echo relaxation measurements in the annealed and light-soaked state revealed two types of defects (termed type I and II), which can be discerned by their electron-spin echo relaxation. Type I exhibits a monoexponential decay related to indirect flip-flop processes between dipolar coupled electron spins in defect clusters, while the phase relaxation of type II is dominated by 1H nuclear spin dynamics and is indicative for isolated spins. We propose that defects are either located at internal surfaces of microvoids (type I) or are isolated and uniformly distributed in the bulk (type II). The concentration of both defect type I and II is significantly higher in the light-soaked state compared to the annealed state. Our results indicate that in addition to isolated defects, defects on internal surfaces of microvoids play a role in light-induced degradation of device-quality a-Si:H.

  8. Effect of cerium addition on casting/chill interfacial heat flux and casting surface profile during solidification of Al-14%Si alloy

    NASA Astrophysics Data System (ADS)

    Vijeesh, V.; Prabhu, K. N.

    2016-03-01

    In the present investigation, Al-14 wt. % Si alloy was solidified against copper, brass and cast iron chills, to study the effect of Ce melt treatment on casting/chill interfacial heat flux transients and casting surface profile. The heat flux across the casting/chill interface was estimated using inverse modelling technique. On addition of 1.5% Ce, the peak heat flux increased by about 38%, 42% and 43% for copper, brass and cast iron chills respectively. The effect of Ce addition on casting surface texture was analyzed using a surface profilometer. The surface profile of the casting and the chill surfaces clearly indicated the formation of an air gap at the periphery of the casting. The arithmetic average value of the profile departure from the mean line (Ra) and arithmetical mean of the absolute departures of the waviness profile from the centre line (Wa) were found to decrease on Ce addition. The interfacial gap width formed for the unmodified and Ce treated casting surfaces at the periphery were found to be about 35µm and 13µm respectively. The enhancement in heat transfer on addition of Ce addition was attributed to the lowering of the surface tension of the liquid melt. The gap width at the interface was used to determine the variation of heat transfer coefficient (HTC) across the chill surface after the formation of stable solid shell. It was found that the HTC decreased along the radial direction for copper and brass chills and increased along radial direction for cast iron chills.

  9. Modeling the Effect of External Carbon Source Addition under Different Electron Acceptor Conditions in Biological Nutrient Removal Activated Sludge Systems.

    PubMed

    Hu, Xiang; Wisniewski, Kamil; Czerwionka, Krzysztof; Zhou, Qi; Xie, Li; Makinia, Jacek

    2016-02-16

    The aim of this study was to expand the International Water Association Activated Sludge Model No. 2d (ASM2d) to predict the aerobic/anoxic behavior of polyphosphate accumulating organisms (PAOs) and "ordinary" heterotrophs in the presence of different external carbon sources and electron acceptors. The following new aspects were considered: (1) a new type of the readily biodegradable substrate, not available for the anaerobic activity of PAOs, (2) nitrite as an electron acceptor, and (3) acclimation of "ordinary" heterotrophs to the new external substrate via enzyme synthesis. The expanded model incorporated 30 new or modified process rate equations. The model was evaluated against data from several, especially designed laboratory experiments which focused on the combined effects of different types of external carbon sources (acetate, ethanol and fusel oil) and electron acceptors (dissolved oxygen, nitrate and nitrite) on the behavior of PAOs and "ordinary" heterotrophs. With the proposed expansions, it was possible to improve some deficiencies of the ASM2d in predicting the behavior of biological nutrient removal (BNR) systems with the addition of external carbon sources, including the effect of acclimation to the new carbon source. PMID:26783836

  10. Modeling the Effect of External Carbon Source Addition under Different Electron Acceptor Conditions in Biological Nutrient Removal Activated Sludge Systems.

    PubMed

    Hu, Xiang; Wisniewski, Kamil; Czerwionka, Krzysztof; Zhou, Qi; Xie, Li; Makinia, Jacek

    2016-02-16

    The aim of this study was to expand the International Water Association Activated Sludge Model No. 2d (ASM2d) to predict the aerobic/anoxic behavior of polyphosphate accumulating organisms (PAOs) and "ordinary" heterotrophs in the presence of different external carbon sources and electron acceptors. The following new aspects were considered: (1) a new type of the readily biodegradable substrate, not available for the anaerobic activity of PAOs, (2) nitrite as an electron acceptor, and (3) acclimation of "ordinary" heterotrophs to the new external substrate via enzyme synthesis. The expanded model incorporated 30 new or modified process rate equations. The model was evaluated against data from several, especially designed laboratory experiments which focused on the combined effects of different types of external carbon sources (acetate, ethanol and fusel oil) and electron acceptors (dissolved oxygen, nitrate and nitrite) on the behavior of PAOs and "ordinary" heterotrophs. With the proposed expansions, it was possible to improve some deficiencies of the ASM2d in predicting the behavior of biological nutrient removal (BNR) systems with the addition of external carbon sources, including the effect of acclimation to the new carbon source.

  11. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Robson, M. T.; LaPierre, R. R.

    2016-02-01

    InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440 °C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.

  12. Large-scale sequencing reveals 21U-RNAs and additional microRNAs and endogenous siRNAs in C. elegans.

    PubMed

    Ruby, J Graham; Jan, Calvin; Player, Christopher; Axtell, Michael J; Lee, William; Nusbaum, Chad; Ge, Hui; Bartel, David P

    2006-12-15

    We sequenced approximately 400,000 small RNAs from Caenorhabditis elegans. Another 18 microRNA (miRNA) genes were identified, thereby extending to 112 our tally of confidently identified miRNA genes in C. elegans. Also observed were thousands of endogenous siRNAs generated by RNA-directed RNA polymerases acting preferentially on transcripts associated with spermatogenesis and transposons. In addition, a third class of nematode small RNAs, called 21U-RNAs, was discovered. 21U-RNAs are precisely 21 nucleotides long, begin with a uridine 5'-monophosphate but are diverse in their remaining 20 nucleotides, and appear modified at their 3'-terminal ribose. 21U-RNAs originate from more than 5700 genomic loci dispersed in two broad regions of chromosome IV-primarily between protein-coding genes or within their introns. These loci share a large upstream motif that enables accurate prediction of additional 21U-RNAs. The motif is conserved in other nematodes, presumably because of its importance for producing these diverse, autonomously expressed, small RNAs (dasRNAs).

  13. Effect of substrate particle size and additional nitrogen source on production of lignocellulolytic enzymes by Pleurotus ostreatus strains.

    PubMed

    Membrillo, Isabel; Sánchez, Carmen; Meneses, Marcos; Favela, Ernesto; Loera, Octavio

    2008-11-01

    Two strains of Pleurotus ostreatus (IE-8 and CP-50) were grown on defined medium added with wheat straw extract (WSE). Mycelia from these cultures were used as an inoculum for solid fermentation using sugar cane bagasse (C:N=142). This substrate was used separately either as a mixture of heterogeneous particle sizes (average size 2.9 mm) or as batches with two different particle sizes (0.92 mm and 1.68 mm). Protein enrichment and production of lignocellulolytic enzymes on each particle size was compared. The effect of ammonium sulphate (AS) addition was also analyzed (modified C:N=20), this compound favored higher levels of protein content. Strain CP-50 showed the highest increase of protein content (48% on particle size of 1.68 mm) when compared to media with no additional N source. However, strain IE-8 produced the highest levels of all enzymes: xylanases (5.79 IU/g dry wt on heterogeneous particles) and cellulases (0.18 IU/g dry wt on smallest particles), both without the addition of AS. The highest laccase activity (0.040 IU/g dry wt) was obtained on particles of 1.68 mm in the presence of AS. Since effect of particle size and addition AS was different for each strain, these criteria should be considered for diverse biotechnological applications.

  14. 2-Hydroxy-4-methylselenobutanoic acid induces additional tissue selenium enrichment in broiler chickens compared with other selenium sources.

    PubMed

    Briens, Mickaël; Mercier, Yves; Rouffineau, Friedrich; Mercerand, Frédéric; Geraert, Pierre-André

    2014-01-01

    Two experiments were conducted in broiler chickens to compare the effect of different Se sources on Se tissue enrichment: sodium selenite (SS), seleno-yeast (SY), and a new organic Se source (SO) containing 2-hydroxy-4-methylselenobutanoic acid (HMSeBA) as an active substance. For each experiment, treatments differed only in source or dose of Se additive. Relative efficiency was compared by plasma and tissue [muscle (pectoralis major) and liver] total Se concentrations. The first experiment compared Se sources (SS, SY, and SO) at different concentrations (mg of Se/kg of feed; SS-0.3; SY-0.1 and -0.3; SO-0.1 and -0.3; and a negative control, 0) in broilers between 0 and 42 d of age. Plasma, liver, and muscle Se concentrations were improved by all Se sources at both d 21 and 42 compared with the negative control group. Between Se sources, minor differences were observed for plasma and liver results, whereas a significant dose effect was observed from 0.1 to 0.3 mg of Se/kg of feed (P < 0.05) for each source. Muscle Se concentrations were improved such as SO > SY > SS (P < 0.05). Moreover, the relative muscle Se enrichment comparison, using linear regression slope ratio, indicated an average of 1.48-fold (95% CI 1.38, 1.58) higher Se deposition in muscle for SO compared with SY. In the second experiment, excessive dietary doses of 5 mg of Se/kg of feed from SS and SO showed a lower deleterious effect of SO on BW and feed intake in comparison with standard Se doses (P < 0.05). Seleno amino acid measurements conducted on different tissues of animals fed SO at 0.5 mg/kg of feed showed that HMSeBA is fully converted into selenomethionine and selenocysteine. These results of both experiments demonstrate the higher relative bioavailability of SO compared with SS and SY as determined through tissue Se enrichment.

  15. Experimental investigations of the swirling flow in the conical diffuser using flow-feedback control technique with additional energy source

    NASA Astrophysics Data System (ADS)

    Tǎnasǎ, C.; Bosioc, A. I.; Susan-Resiga, R. F.; Muntean, S.

    2012-11-01

    The previous experimental and numerical investigations of decelerated swirling flows in conical diffusers have demonstrated that water injection along to the axis mitigates the pressure fluctuations associated to the precessing vortex rope [1]. However, for swirling flows similar to Francis turbines operated at partial discharge, the water jet becomes effective when the jet discharge is larger than 10% from the turbine discharge, leading to large volumetric losses when the jet is supplied from upstream the runner. As a result, it was introduced a new approach for supplying the jet by using a fraction of the discharge collected downstream the conical diffuser [2]. This is called flow-feedback control technique (FFCT) and it was investigated experimentally in order to assess its capability [3]. The FFCT approach not requires additional energy to supply the jet. Consequently, the turbine efficiency is not diminished due to the volumetric losses injected even if around 10% of the main flow is used. However, the equivalent amplitude of the pressure pulsations associated to the vortex rope decreases with 30% if 10% jet discharge is applied [3]. Using 12% water jet discharge from upstream then the equivalent amplitude of the pressure pulsations is mitigated with 70% according to Bosioc et al. [4]. In our case, an extra 2% jet discharge is required in order to obtain similar results with FFCT. This extra discharge is provided using an additional energy source. Therefore, the paper presents experimental investigation performed with FFCT with additional energy source. The experimental results obtained with this technique are compared against FFCT and the swirling flow with vortex rope, respectively.

  16. Effect of carbon source addition on toluene biodegradation by an Escherichia coli DH5alpha transconjugant harboring the TOL plasmid.

    PubMed

    Ikuma, Kaoru; Gunsch, Claudia

    2010-10-01

    Horizontal gene transfer (HGT) of plasmids is a naturally occurring phenomenon which could be manipulated for bioremediation applications. Specifically, HGT may prove useful to enhance bioremediation through genetic bioaugmentation. However, because the transfer of a plasmid between donor and recipient cells does not always result in useful functional phenotypes, the conditions under which HGT events result in enhanced degradative capabilities must first be elucidated. The objective of this study was to determine if the addition of alternate carbon substrates could improve toluene degradation in Escherichia coli DH5alpha transconjugants. The addition of glucose (0.5-5 g/L) and Luria-Bertani (LB) broth (10-100%) resulted in enhanced toluene degradation. On average, the toluene degradation rate increased 14.1 (+/-2.1)-fold in the presence of glucose while the maximum increase was 18.4 (+/-1.7)-fold in the presence of 25% LB broth. Gene expression of xyl genes was upregulated in the presence of glucose but not LB broth, which implies different inducing mechanisms by the two types of alternate carbon source. The increased toluene degradation by the addition of glucose or LB broth was persistent over the short-term, suggesting the pulse amendment of an alternative carbon source may be helpful in bioremediation. While the effects of recipient genome GC content and other conditions must still be examined, our results suggest that changes in environmental conditions such as alternate substrate availability may significantly improve the functionality of the transferred phenotypes in HGT and therefore may be an important parameter for genetic bioaugmentation optimization.

  17. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and AsH{sub 3}: Effects on film-growth kinetics

    SciTech Connect

    Kim, H.; Glass, G.; Soares, J. A. N. T.; Desjardins, P.; Greene, J. E.

    2000-12-15

    The effects of As doping, at concentrations C{sub As}{<=}4.8x10{sup 18}cm{sup -3}, on the growth kinetics of Si(001):As layers deposited at temperatures T{sub s}=575--900{sup o}C by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and AsH{sub 3} have been investigated. With constant AsH{sub 3} and Si{sub 2}H{sub 6} fluxes, film deposition rates R{sub Si} increase while C{sub As} decreases with increasing T{sub s}. All incorporated As resides at substitutional electrically active sites for C{sub As} up to 3.8x10{sup 18}cm{sup -3} (T{sub s}=800{sup o}C), the highest value yet reported for Si(001):As growth from hydride source gases. Immediately following film growth or partial-monolayer As adsorption on clean Si(001), the samples were quenched to 300{sup o}C and exposed to atomic deuterium (D) until saturation coverage. In situ D{sub 2} temperature-programmed desorption (TPD) spectra from both as-deposited Si(001):As and As-adsorbed Si(001) layers are composed of {beta}{sub 1} and {beta}{sub 2} peaks, due to D{sub 2} desorption from Si monodeuteride and dideuteride surface phases, together with a new peak {beta}{sub 3} which we attribute to desorption from Si--As mixed dimers. Analyses of the TPD spectra show that, because of the lone-pair electrons associated with each As surface atom, the total dangling-bond coverage, and hence R{sub Si}, decreases with increasing incoming flux J{sub AsH{sub 3}} at constant T{sub s}. From measurements of the steady-state As surface coverage {theta}{sub As} vs C{sub As} and T{sub s}, we obtain an As surface segregation enthalpy {Delta}H{sub s}=-0.92eV. Dissociative AsH{sub 3} adsorption on Si(001) was found to follow second-order kinetics with a relatively T{sub s}-independent reactive sticking probability of 0.3. Associative As{sub 2} desorption is also second order with a rate constant k{sub d,As{sub 2}}=1x10{sup 13}exp(-3.0eV/kT{sub s}). From the combined set of results, we develop a predictive model with no fitting

  18. Xylem-Transported Glucose as an Additional Carbon Source for Leaf Isoprene Formation in Quercus Robur L.

    NASA Astrophysics Data System (ADS)

    Graus, M.; Kreuzwieser, J.; Schnitzler, J.; Wisthaler, A.; Hansel, A.; Rennenberg, H.

    2003-04-01

    Isoprene is emitted from mature, photosynthesizing leaves of many plant species, particularly of trees. Current interest in understanding the biochemical and physiological mechanisms controlling isoprene formation is caused by the important role isoprene plays in atmospheric chemistry. Isoprene reacts with hydroxyl radicals (OH) thereby generating oxidizing agents such as ozone and organic peroxides. Ozone causes significant deterioration in air quality and can pose threats to human health therefore its control is a major goal in Europe and the United States. In recent years, much progress has been made in elucidating the pathways of isoprene biosynthesis. Nevertheless the regulatory mechanisms controlling isoprene emission are not completely understood. Light and temperature appear to be the main factors controlling short-term variations in isoprene emission. Exposure of plants to C-13 labeled carbon dioxide showed instantaneous assimilated carbon is the primary carbon source for isoprene formation. However, variations in diurnal and seasonal isoprene fluxes, which cannot be explained by temperature, light, and leaf development led to the suggestion that alternative carbon sources may exist contributing to isoprene emissions. The aim of the present study was to test whether xylem-transported carbohydrates act as additional sources for isoprene biosynthesis. For this purpose, [U-C-13] alpha-D-glucose was fed to photosynthesizing leaves via the xylem of Quercus robur L. seedlings and the incorporation of glucose derived C-13 into emitted isoprene was monitored in real time using Proton-Transfer-Reaction Mass Spectrometry (PTR-MS). A rapid incorporation of C-13 from xylem-fed glucose into single (mass 70) and double (mass 71) C-13 labeled isoprene molecules was observed after a lag phase of approximately 5 to 10 minutes. This incorporation was temperature dependent and was highest (up to 13% C-13 of total carbon emitted as isoprene) at the temperature optimum of

  19. Xylem-transported Glucose as an Additional Carbon Source for Leaf Isoprene Formation in Quercus Robur L.

    NASA Astrophysics Data System (ADS)

    Graus, M.; Wisthaler, A.; Hansel, A.; Kreuzwieser, J.; Rennenberg, H.; Schnitzler, J.

    2002-12-01

    Isoprene is emitted from mature, photosynthesizing leaves of many plant species, particularly of trees. Current interest in understanding the biochemical and physiological mechanisms controlling isoprene formation is caused by the important role isoprene plays in atmospheric chemistry. Isoprene reacts with hydroxyl radicals (OH) thereby generating oxidizing agents such as ozone and organic peroxides. Ozone causes significant deterioration in air quality and can pose threats to human health therefore its control is a major goal in Europe and the United States. In recent years, much progress has been made in elucidating the pathways of isoprene biosynthesis. Nevertheless the regulatory mechanisms controlling isoprene emission are not completely understood. Light and temperature appear to be the main factors controlling short-term variations in isoprene emission. Exposure of plants to 13CO2 showed instantaneous assimilated carbon is the primary carbon source for isoprene formation. However, variations in diurnal and seasonal isoprene fluxes, which cannot be explained by temperature, light, and leaf development led to the suggestion that alternative carbon sources may exist contributing to isoprene emissions. The aim of the present study was to test whether xylem-transported carbohydrates act as additional sources for isoprene biosynthesis. For this purpose, [U-13C]α-D-glucose was fed to photosynthesizing leaves via the xylem of {Quercus} {robur} L. seedlings and the incorporation of glucose derived 13C into emitted isoprene was monitored in real time using Proton-Transfer-Reaction Mass Spectrometry (PTR-MS). A rapid incorporation of 13C from xylem-fed glucose into single (mass 70) and double (mass 71) 13C-labeled isoprene molecules was observed after a lag phase of approximately 5 to 10 minutes. This incorporation was temperature dependent and was highest (up to 13 % 13C of total carbon emitted as isoprene) at the temperature optimum of isoprene emission (40 - 42

  20. Ge/Si, Ca/Sr and 87Sr/86Sr tracers of biogeochemical sources and cycling of Si and Ca at the Shale Hills CZO

    NASA Astrophysics Data System (ADS)

    Derry, L. A.; Meek, K.; Sparks, J. P.

    2014-12-01

    Plant uptake and cycling of nutrients is commonly the largest flux of nutrients in terrestrial ecosystems. Hydrologic and other losses are offset by inputs from atmospheric deposition and weathering. We measured elemental and isotopic compositions from soil solution, soil exchange complex, leaves and sapwater from two canopy species, soil and rock samples, and stream and ground waters at the Shale Hills CZO. Xylem fluid and leaf samples have similar Ge/Si < 1 μmo/mol, consistent with fractionation at the root-soil water interface. Ge/Si in soil waters is higher Ge/Si near the surface and increases over the growing season, indicating preferential uptake of Si. Ca/Sr in leaves of Quercus are significantly higher (450±150) than for Acer (200±100), and Ca/Sr is generally higher in leaves than in xylem, consistent with Ca uptake during transpiration. 87Sr/86Sr in both are similar for a given site, implying that the trees access similar pools of Sr and Ca, although there are site-to-site differences. Data on litterfall rates and transpiration rates yield similar estimates of plant cycling of Ca and Si. 87Sr/86Sr in soil solutions from ridgtop and swale sites are well explained by mixing Sr derived from shale and atmospheric deposition. Valley bottom soil solutions and stream and groundwater samples include Sr and Ca derived from dissolution of diagenetic carbonates, found in drill cuttings. A preliminary estimate of the Sr and Ca stream fluxes and isotopic mass balances imply propagation of a carbonate weathering front of ca. 200 m/Ma, faster than previously reported regolith weathering advance rates based on on cosmogenic nuclides and U series (Jin et al., 2010; Ma et al., 2010). These rates are not strictly comparable and differences are at least in part consistent with the greater depth of the carbonate weathering front (Brantley et al, 2013). The data for Ca, Sr, Si and Ge in soil, soil solutions and stream waters reflects the interaction of slower weathering

  1. Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Hong, Peizhen; Liu, Jinbiao; Yin, Huaxiang; Yin, Haizhou; Ma, Xiaolong; Cui, Hushan; Lu, Yihong; Meng, Lingkuan; Xiang, Jinjuan; Zhong, Huicai; Zhu, Huilong; Xu, Qiuxia; Li, Junfeng; Yan, Jian; Zhao, Chao; Radamson, Henry H.

    2016-09-01

    In this paper, the technology of recessed embedded SiGe (e-SiGe) source/drain (S/D) module is optimized for the performance enhancement in 22 nm all-last high-k/metal-gate (HK/MG) pMOSFETs. Different Si recess-etch techniques were applied in S/D regions to increase the strain in the channel and subsequently, improve the performance of transistors. A new recess-etch method consists of a two-step etch method is proposed. This process is an initial anisotropic etch for the formation of shallow trench followed by a final isotropic etch. By introducing the definition of the upper edge distance (D) between the recessed S/D region and the channel region, the process advantage of the new approach is clearly presented. It decreases the value of D than those by conventional one-step isotropic or anisotropic etch of Si. Therefore, the series resistance is reduced and the channel strain is increased, which confirmed by the simulation results. The physical reason of D reducing is analyzed in brief. Applying this recess design, the implant conditions for S/D extension (SDE) are also optimized by using a two-step implantation of BF2 in SiGe layers. The overlap space between doping junction and channel region has great effect on the device's performance. The designed implantation profile decreases the overlap space while keeps a shallow junction depth for a controllable short channel effect. The channel resistance as well as the transfer ID-VG curves varying with different process conditions are demonstrated. It shows the drive current of the device with the optimized SDE implant condition and Si recess-etch process is obviously improved. The change trend of on-off current distributions extracted from a series of devices confirmed the conclusions. This study provides a useful guideline for developing high performance strained PMOS SiGe technology.

  2. Addition of a Worm Leachate as Source of Humic Substances in the Drinking Water of Broiler Chickens

    PubMed Central

    Gomez-Rosales, S.; de L. Angeles, M.

    2015-01-01

    The objective of this research was to evaluate the growth performance, the apparent ileal digestibility of nitrogen and energy, the retention of nutrients and the apparent metabolizable energy corrected to zero nitrogen retention (AMEn) in broiler chickens supplemented with increasing doses of a worm leachate (WL) as a source of humic substances (HS) in the drinking water. In Exp. 1, 140 male broilers were penned individually and assigned to four WL levels (0%, 10%, 20%, and 30%) mixed in the drinking water from 21 to 49 days of age. Water was offered in plastic bottles tied to the cage. In Exp. 2, 600 male broilers from 21 to 49 days of age housed in floor pens were assigned to three levels of WL (0%, 10%, and 20%) mixed in the drinking water. The WL was mixed with tap water in plastic containers connected by plastic tubing to bell drinkers. The results of both experiments were subjected to analysis of variance and polynomial contrasts. In Exp. 1, the daily water consumption was similar among treatments but the consumption of humic, fulvic, and total humic acids increased linearly (p<0.01) as the WL increased in the drinking water. The feed conversion (p<0.01) and the ileal digestibility of energy, the excretion of dry matter and energy, the retention of dry matter, ash and nitrogen and the AMEn showed quadratic responses (p<0.05) relative to the WL levels in drinking water. In Exp. 2, the increasing level of WL in the drinking water had quadratic effects on the final body weight, daily weight gain and feed conversion ratio (p<0.05). The addition of WL as a source of HS in the drinking water had beneficial effects on the growth performance, ileal digestibility of energy, the retention of nutrients as well on the AMEn in broiler chickens; the best results were observed when the WL was mixed at levels of 20% to 30% in the drinking water. PMID:25557817

  3. Addition of a worm leachate as source of humic substances in the drinking water of broiler chickens.

    PubMed

    Gomez-Rosales, S; de L Angeles, M

    2015-02-01

    The objective of this research was to evaluate the growth performance, the apparent ileal digestibility of nitrogen and energy, the retention of nutrients and the apparent metabolizable energy corrected to zero nitrogen retention (AMEn) in broiler chickens supplemented with increasing doses of a worm leachate (WL) as a source of humic substances (HS) in the drinking water. In Exp. 1, 140 male broilers were penned individually and assigned to four WL levels (0%, 10%, 20%, and 30%) mixed in the drinking water from 21 to 49 days of age. Water was offered in plastic bottles tied to the cage. In Exp. 2, 600 male broilers from 21 to 49 days of age housed in floor pens were assigned to three levels of WL (0%, 10%, and 20%) mixed in the drinking water. The WL was mixed with tap water in plastic containers connected by plastic tubing to bell drinkers. The results of both experiments were subjected to analysis of variance and polynomial contrasts. In Exp. 1, the daily water consumption was similar among treatments but the consumption of humic, fulvic, and total humic acids increased linearly (p<0.01) as the WL increased in the drinking water. The feed conversion (p<0.01) and the ileal digestibility of energy, the excretion of dry matter and energy, the retention of dry matter, ash and nitrogen and the AMEn showed quadratic responses (p<0.05) relative to the WL levels in drinking water. In Exp. 2, the increasing level of WL in the drinking water had quadratic effects on the final body weight, daily weight gain and feed conversion ratio (p<0.05). The addition of WL as a source of HS in the drinking water had beneficial effects on the growth performance, ileal digestibility of energy, the retention of nutrients as well on the AMEn in broiler chickens; the best results were observed when the WL was mixed at levels of 20% to 30% in the drinking water.

  4. Escaping the Tyranny of Carbothermal Reduction: Fumed Silica from Sustainable, Green Sources without First Having to Make SiCl4.

    PubMed

    Yi, Eongyu; Hyde, Clare E; Sun, Kai; Laine, Richard M

    2016-02-12

    Fumed silica is produced in 1000 tons per year quantities by combusting SiCl4 in H2 /O2 flames. Given that both SiCl4 and combustion byproduct HCl are corrosive, toxic and polluting, this route to fumed silica requires extensive safeguards that may be obviated if an alternate route were found. Silica, including rice hull ash (RHA) can be directly depolymerized using hindered diols to generate distillable spirocyclic alkoxysilanes or Si(OEt)4 . We report here the use of liquid-feed flame spray pyrolysis (LF-FSP) to combust the aforementioned precursors to produce fumed silica very similar to SiCl4 -derived products. The resulting powders are amorphous, necked, <50 nm average particle sizes, with specific surface areas (SSAs) of 140-230 m(2)  g(-1) . The LF-FSP approach does not require the containment constraints of the SiCl4 process and given that the RHA silica source is produced in million ton per year quantities worldwide, the reported approach represents a sustainable, green and potentially lower-cost alternative. PMID:26699804

  5. Escaping the Tyranny of Carbothermal Reduction: Fumed Silica from Sustainable, Green Sources without First Having to Make SiCl4.

    PubMed

    Yi, Eongyu; Hyde, Clare E; Sun, Kai; Laine, Richard M

    2016-02-12

    Fumed silica is produced in 1000 tons per year quantities by combusting SiCl4 in H2 /O2 flames. Given that both SiCl4 and combustion byproduct HCl are corrosive, toxic and polluting, this route to fumed silica requires extensive safeguards that may be obviated if an alternate route were found. Silica, including rice hull ash (RHA) can be directly depolymerized using hindered diols to generate distillable spirocyclic alkoxysilanes or Si(OEt)4 . We report here the use of liquid-feed flame spray pyrolysis (LF-FSP) to combust the aforementioned precursors to produce fumed silica very similar to SiCl4 -derived products. The resulting powders are amorphous, necked, <50 nm average particle sizes, with specific surface areas (SSAs) of 140-230 m(2)  g(-1) . The LF-FSP approach does not require the containment constraints of the SiCl4 process and given that the RHA silica source is produced in million ton per year quantities worldwide, the reported approach represents a sustainable, green and potentially lower-cost alternative.

  6. In situ sol-gel composition of multicomponent hybrid precursors to luminescent novel unexpected microrod of Y 2SiO 5:Eu 3+ employing different silicate sources

    NASA Astrophysics Data System (ADS)

    Huang, Honghua; Yan, Bing

    2004-12-01

    Y 2SiO 5 doped with Eu 3+ were in situ synthesized by a hybrid precursor assembly sol-gel technology employing four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM result shows that there exist some novel unexpected morphological microrod structures owing to using the crosslinking reagents other than TEOS as silicate source. The photoluminescent properties of Y 2SiO 5:Eu 3+ have been studied as a function of Eu 3+ doping concentration. A cross-relaxation process between identical Eu 3+ ions results in the quenching of the 5D 1 emission for high concentration sample.

  7. Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

    NASA Astrophysics Data System (ADS)

    Xu, J.; Yang, Y. Z.; Li, W.; Chen, X. C.; Xie, Z. W.

    2016-11-01

    The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe83.4Si2B14-xPxCu0.5C0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe83.4Si2B10P4Cu0.5C0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe83.4Si2B11P3Cu0.5C0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe83.4Si2B10P4Cu0.5C0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications.

  8. Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

    PubMed

    Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

    2014-11-21

    A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

  9. 26 CFR 31.6001-5 - Additional records in connection with collection of income tax at source on wages.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... collection of income tax at source on wages. 31.6001-5 Section 31.6001-5 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY (CONTINUED) EMPLOYMENT TAXES AND COLLECTION OF INCOME TAX AT SOURCE EMPLOYMENT TAXES AND COLLECTION OF INCOME TAX AT SOURCE Administrative Provisions of Special Application...

  10. 26 CFR 31.6001-5 - Additional records in connection with collection of income tax at source on wages.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... collection of income tax at source on wages. 31.6001-5 Section 31.6001-5 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY (CONTINUED) EMPLOYMENT TAXES AND COLLECTION OF INCOME TAX AT SOURCE EMPLOYMENT TAXES AND COLLECTION OF INCOME TAX AT SOURCE Administrative Provisions of Special Application...

  11. 77 FR 12226 - Sadex Corp.; Filing of Food Additive Petition (Animal Use); Electron Beam and X-Ray Sources for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-29

    ... Petition (Animal Use); Electron Beam and X-Ray Sources for Irradiation of Poultry Feed and Poultry Feed... regulations be amended to provide for the safe use of electron beam and x-ray sources for irradiation of... use of electron beam and x- ray sources for irradiation of poultry feed and poultry feed...

  12. Addition of SiC Particles to Ag Die-Attach Paste to Improve High-Temperature Stability; Grain Growth Kinetics of Sintered Porous Ag

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Nagao, Shijo; Suganuma, Katsuaki

    2015-10-01

    To improve the high-temperature reliability of sintered Ag joints, three types of silicon carbide particle (SiCp) of different size and morphology were added to Ag micron-flake paste. Quality sintered joints between Cu dummy chips and Cu substrate were obtained at a relatively low temperature (250°C), in air, under low load (0.4 MPa), and 35 MPa die-shear strength was achieved. High-temperature stability was investigated by means of aging tests at 150, 200, and 250°C for 500 h, and by thermal cycling between -50°C and 250°C for up to 170 cycles. The best distribution and compatibility with porous sintered Ag structures was observed for sub-micron SiC particles with an average diameter of 600 nm. After high-temperature storage for 500 h at 250°C, mean Ag grain size of the SiC-containing joints was unchanged whereas that for pure sintered Ag increased from 1.1 to 2.5 μm. Ag joints containing the optimum amount (2 wt.%) of SiCp retained their original strength (20 MPa) after storage at 250°C for 500 h. The shear strength of Ag joints without added SiCp decreased from 27 to 7 MPa after 500 h because of grain growth, which obeyed the classical parabolic law. Grain growth in pure Ag joints is discussed in terms of a temperature-dependent exponent n and activation energy Q. Our SiCp-containing joints resisted the grain growth that induces interfacial cracks during thermal cycling.

  13. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ∼70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ∼10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2

  14. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ˜70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ˜10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium

  15. Field-scale investigation of enhanced petroleum hydrocarbon biodegradation in the vadose zone combining soil venting as an oxygen source with moisture and nutrient addition. Appendices. Doctoral thesis

    SciTech Connect

    Miller, R.N.

    1990-01-01

    This document contains appendices regarding a reprint on a field scale investigation of enhanced petroleum hydrocarbon biodegradation in the vadose zone combining soil venting as a oxygen source with moisture and nutrient addition.

  16. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  17. Superconducting Properties of MgB2 with Addition of Other AlB2-type Diborides and Carbon Sources, Prepared Using High Energy Ball Milling and HIP

    NASA Astrophysics Data System (ADS)

    Rodrigues, Durval; Silva, Lucas B. S. da; Metzner, Vivian C. V.; Hellstrom, Eric E.

    In the present work it is described the production of MgB2 samples by using the mixture of MgB2 with other diborides, (TaB2, VB2, and AlB2) which have the same C32 hexagonal structure as the MgB2, and simultaneous addition with the diborides and SiC, that contribute with C, to replace B in the crystalline structure of the matrix. As an important result, the critical current density (Jc) was improved at low magnetic fields when just the diborides are added. However, when SiC is added simultaneously with the diborides, the result is the improvement of Jc at high fields. The critical temperature (Tc) was maintained high.

  18. Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

    NASA Astrophysics Data System (ADS)

    Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; GuillonPresent Address: Forschungszentrum Jülich, Institut Für Energie-Und Klimaforschung 1: Werkstoffsynthese Und Herstellungsverfahren, Wilhelm-Johnen-Straße, D.-52425 Jülich., Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

    2014-10-01

    A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

  19. Combinations of siRNAs against La Autoantigen with NS5B or hVAP-A Have Additive Effect on Inhibition of HCV Replication

    PubMed Central

    Mandal, Anirban; Ganta, Krishna Kumar

    2016-01-01

    Hepatitis C virus is major cause of chronic liver diseases such as chronic hepatitis, liver cirrhosis, and hepatocellular carcinoma. Presently available direct-acting antiviral drugs have improved success rate; however, high cost limits their utilization, especially in developing countries like India. In the present study, we evaluated anti-HCV potential of several siRNAs targeted against the HCV RNA-dependent RNA polymerase NS5B and cellular factors, La autoantigen, PSMA7, and human VAMP-associated protein to intercept different steps of viral life cycle. The target genes were downregulated individually as well as in combinations and their impact on viral replication was evaluated. Individual downregulation of La autoantigen, PSMA7, hVAP-A, and NS5B resulted in inhibition of HCV replication by about 67.2%, 50.7%, 39%, and 52%, respectively. However, antiviral effect was more pronounced when multiple genes were downregulated simultaneously. Combinations of siRNAs against La autoantigen with NS5B or hVAP-A resulted in greater inhibition in HCV replication. Our findings indicate that siRNA is a potential therapeutic tool for inhibiting HCV replication and simultaneously targeting multiple viral steps with the combination of siRNAs is more effective than silencing a single target. PMID:27446609

  20. Combinations of siRNAs against La Autoantigen with NS5B or hVAP-A Have Additive Effect on Inhibition of HCV Replication.

    PubMed

    Mandal, Anirban; Ganta, Krishna Kumar; Chaubey, Binay

    2016-01-01

    Hepatitis C virus is major cause of chronic liver diseases such as chronic hepatitis, liver cirrhosis, and hepatocellular carcinoma. Presently available direct-acting antiviral drugs have improved success rate; however, high cost limits their utilization, especially in developing countries like India. In the present study, we evaluated anti-HCV potential of several siRNAs targeted against the HCV RNA-dependent RNA polymerase NS5B and cellular factors, La autoantigen, PSMA7, and human VAMP-associated protein to intercept different steps of viral life cycle. The target genes were downregulated individually as well as in combinations and their impact on viral replication was evaluated. Individual downregulation of La autoantigen, PSMA7, hVAP-A, and NS5B resulted in inhibition of HCV replication by about 67.2%, 50.7%, 39%, and 52%, respectively. However, antiviral effect was more pronounced when multiple genes were downregulated simultaneously. Combinations of siRNAs against La autoantigen with NS5B or hVAP-A resulted in greater inhibition in HCV replication. Our findings indicate that siRNA is a potential therapeutic tool for inhibiting HCV replication and simultaneously targeting multiple viral steps with the combination of siRNAs is more effective than silencing a single target. PMID:27446609

  1. Study on the lifetime of Mo/Si multilayer optics with pulsed EUV-source at the ETS

    NASA Astrophysics Data System (ADS)

    Schürmann, Mark; Yulin, Sergiy; Nesterenko, Viatcheslav; Feigl, Torsten; Kaiser, Norbert; Tkachenko, Boris; Schürmann, Max C.

    2011-06-01

    As EUV lithography is on its way into production stage, studies of optics contamination and cleaning under realistic conditions become more and more important. Due to this fact an Exposure Test Stand (ETS) has been constructed at XTREME technologies GmbH in collaboration with Fraunhofer IOF and with financial support of Intel Corporation. This test stand is equipped with a pulsed DPP source and allows for the simultaneous exposure of several samples. In the standard set-up four samples with an exposed area larger than 35 mm2 per sample can be exposed at a homogeneous intensity of 0.25 mW/mm2. A recent update of the ETS allows for simultaneous exposures of two samples with intensities up to 1.0 mW/mm2. The first application of this alternative set-up was a comparative study of carbon contamination rates induced by EUV radiation from the pulsed source with contamination rates induced by quasicontinuous synchrotron radiation. A modified gas-inlet system allows for the introduction of a second gas to the exposure chamber. This possibility was applied to investigate the efficiency of EUV-induced cleaning with different gas mixtures. In particular the enhancement of EUV-induced cleaning by addition of a second gas to the cleaning gas was studied.

  2. Site selectivity and reversibility in the reactions of titanium hydrazides with Si-H, Si-X, C-X and H+ reagents: Ti=N(α) 1,2-silane addition, Nβ alkylation, Nα protonation and σ-bond metathesis.

    PubMed

    Tiong, Pei Jen; Nova, Ainara; Schwarz, Andrew D; Selby, Jonathan D; Clot, Eric; Mountford, Philip

    2012-02-28

    We report a combined experimental and computational comparative study of the reactions of the homologous titanium dialkyl- and diphenylhydrazido and imido compounds Cp*Ti{MeC(N(i)Pr)(2)}(NNR(2)) (R = Me (1) or Ph (2)) and Cp*Ti{MeC(N(i)Pr)(2)}(NTol) (3) with silanes, halosilanes, alkyl halides and [Et(3)NH][BPh(4)]. Compound 1 underwent reversible Si-H 1,2-addition to Ti=N(α) with RSiH(3) (experimental ΔH ca. -17 kcal mol(-1)), and irreversible addition with PhSiH(2)X (X = Cl, Br). DFT found that the reaction products and certain intermediates were stabilised by β-NMe(2) coordination to titanium. The Ti-D bond in Cp*Ti{MeC(N(i)Pr)(2)}(D){N(NMe(2))SiD(2)Ph} underwent σ-bond metathesis with BuSiH(3) and H(2). Compound 1 reacted with RR'SiCl(2) at N(α) to transfer both Cl atoms to Ti; 2 underwent a similar reaction. Compound 3 did not react with RSiH(3) or alkyl halides but formed unstable Ti=N(α) 1,2-addition or N(α) protonation products with PhSiH(2)X or [Et(3)NH][BPh(4)]. Compound 1 underwent exclusive alkylation at N(β) with RCH(2)X (R = H, Me or Ph; X = Br or I) whereas protonation using [Et(3)NH][BPh(4)] occurred at N(α). DFT studies found that in all cases electrophile addition to N(α) (with or without NMe(2) chelation) was thermodynamically favoured compared to addition to N(β).

  3. Effects of Al and V Additions on Mechanical Response in Thick TiSiCN Nanocomposites Deposited Using Plasma-Enhanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Chan, Yu-Chen; Chen, Hsien-Wei; Wei, Rong-Hua; Lee, Jyh-Wei; Duh, Jenq-Gong

    2013-11-01

    Thick TiSiCN and TiAlVSiCN nanocomposite coatings were fabricated by plasma-enhanced magnetron sputtering (PEMS). Characterizations by electron probe microanalyzer (EPMA) and XRD revealed the dependence of films with various precursor flow rates on the constituent composition and structure evolution in coatings. HRTEM images clearly confirmed that a nanocomposite structure existed with grain size below 10 nm. It was believed that nanocrystalline TiCxN1-x-based phases with B1 structure were embedded in an amorphous SiCyNz matrix, and such phase segregation ameliorated the hardness and H/E ratios. In the scratch and ball-on-disc wear tests, the evidence from crack initiation resistance, friction coefficient, and worn surfaces verified that thick nanocomposites exhibited remarkable tribological resistance. Hybrid anti-wear mechanisms on the basis of mechanical property variation, composition distribution, and microstructure evolution were proposed to elucidate the favorable durability of these thick films.

  4. Effect of the addition of Mn on the tensile properties of a spray-formed and extruded Al-9Si-4Cu-1Fe alloy

    NASA Astrophysics Data System (ADS)

    Benetti, G. D.; Jorge, A. M., Jr.; Kiminami, C. S.; Botta, W. J.; Bolfarini, C.

    2009-01-01

    The microstructure and the tensile properties of a spray-formed and extruded Al- 9Si-4Cu-1Fe alloy were investigated. Manganese (0.3, 1, 2 in wt%) was added to the alloy to avoid the formation of the needle-like β-AlFeSi intermetallic phases that are highly detrimental to the alloy's ductility. The deposits were extruded at 623K with a n area reduction of 5 to 1. Small faceted dispersoids surrounding the equiaxial α-Al matrix, mainly in the form of silicon particles, were identified by SEM-EDS, as well as the Mn-containing α-Al15(Fe,Mn)3Si2 phase. The presence of the needle-like β-Al(Fe,Mn)Si was scanty, even with the lowest Mn content. The room temperature tensile tests of all the extruded alloys showed a significant increase in elongation to fracture when compared with the values observed fo r the as-spray formed deposits.This result can be ascribed to the elimination of porosity promoted by the extrusion process and to the smaller grain size of the extruded samples. PUBLISHER'S NOTE This article by Benetti et al was published in error, it was a duplicate of article 012114 which appears later in this volume, the duplicate PDF and references have been deleted. The missing article by S Jayalakshmi, E Fleury and D J Sordelet, which forms part of the section HYDROGEN IN METASTABLE ALLOYS, now appears at the end of the volume (012120).

  5. In situ sol-gel composition of multicomponent hybrid precursor to hexagon-like Zn 2SiO 4:Tb 3+ microcrystalline phosphors with different silicate sources

    NASA Astrophysics Data System (ADS)

    Huang, Honghua; Yan, Bing

    2006-02-01

    Zn 2SiO 4 doped with Tb 3+ were in situ synthesized by a modified sol-gel technology with the assembly hybrid precursor employed four different silicate sources, i.e. 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM result shows that there exist some novel unexpected micromorphological structures of hexagon-like with the dimension of 0.5-1.0 μm. The photoluminescent properties of Zn 2SiO 4:Tb 3+ phosphors have been studied as a function of Tb 3+ doping concentration. Cross-relaxation process between identical Tb 3+ ions results in the quenching of the 5D 3 emission for high concentration sample.

  6. Synthesis of MgO-CaO-Al2O3-SiO2 nanocomposite powder by polymeric complex method as a novel sintering additive of AlN ceramics

    NASA Astrophysics Data System (ADS)

    Lee, Hwa-Jun; Cho, Woo-Seok; Kim, Hyeong Jun; Pan, Wei; Shahid, Mohammad; Ryu, Sung-Soo

    2016-09-01

    A MgO-CaO-Al2O3-SiO2 (MCAS) nanocomposite powder with a particle size of 50 nm and a specific surface area of 40.6 m2/g was successfully synthesized via heat-treatment of polymeric precursors containing Mg, Ca, Al and Si in air at 700 °C for 5 h. It was characterized as a novel sintering additive for the densification AlN ceramics at a low temperature below 1600 °C. It was found that the nanosized MCAS powder was suitable for the densification of AlN ceramics. In particular, full densification could be achieved when only 1.0 wt% MCAS additive-doped AlN powder compact was sintered for 1 h at 1600 °C, and a thermal conductivity of 84 W/m·K was attained.

  7. Fluorescence enhancement of single-phase red-blue emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors via Dy3+ addition for plant cultivation

    NASA Astrophysics Data System (ADS)

    Liu, Ling-Yun; Wang, Da-Jian; Mao, Zhi-Yong; Liu, Yan-Hua; Li, Xue-Zheng; Lu, Qi-Fei

    2009-01-01

    Fluorescence enhancement of red and blue concurrently emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors for plant cultivation has been investigated by Dy3+ addition. The Ba3MgSi2O8:Eu2+,Mn2+,Dy3+(BMS-EMD) phosphors have two-color emissions at the wavelength peak values of 437 nm and 620 nm at the excitation of 350 nm. The two emission bands are coincident with the absorption spectrum for photosynthesis of plants. An obvious enhancement effect has been observed upon addition of Dy3+ with amount of 0.03 mol%, in which the intensities of both blue and red bands reach a maximum. The origin of red and blue emission bands is analysed. The photochromic parameters of the samples at the nearly UV excitation are tested. This fluoresence enhancement is of great significance for special solid state lighting equipment used in plant cultivation.

  8. Observations on the Influence of Secondary Me Oxides Additives (Me=Si,Al, Mg) on the Microstructural Evolution and Mechanical Behavior of Silicon Nitride Ceramics Containing RE2O3 (RE=La, Gd, Lu)

    SciTech Connect

    Becher, Paul F; Averill, Frank; Lin, Hua-Tay; Waters, Shirley B; Shibata, Naoya; Painter, Gayle S; van Benthem, Klaus

    2010-01-01

    The evolution of β Si3N4 microstructures is influenced by the adsorption of rare earth elements at grain surfaces and by the viscosity of the intergranular phases. Theoretical and STEM studies show that the RE atoms exhibit different tendencies to segregate from the liquid phase to grain surfaces and different binding strengths at these surfaces. When combined with MgO (or Al2O3) secondary additions, the rare earth additives are combined in low viscosity intergranular phases during densification and the α to β phase transformation and microstructural evolution are dominated by the RE adsorption behavior. On the other hand, a much higher viscosity intergranular phase forms when the RE2O3 are combined with SiO2. While the rare earth adsorption behavior remains the same, the phase transformation and microstructure are now dominated by Si3N4 solubility and transport in the high liquid phase. By understanding these additive effects, one can develop reinforced microstructures leading silicon nitride ceramics with greatly improved mechanical behavior.

  9. Patterns of Ca/Sr and 87Sr/ 86Sr variation before and after a whole watershed CaSiO 3 addition at the Hubbard Brook Experimental Forest, USA

    NASA Astrophysics Data System (ADS)

    Nezat, Carmen A.; Blum, Joel D.; Driscoll, Charles T.

    2010-06-01

    Forty-one metric tons of the mineral wollastonite (CaSiO 3) was applied to an 11.8 hectare watershed at the Hubbard Brook Experimental Forest (HBEF; White Mountains, New Hampshire, USA) with the goal of restoring the Ca estimated to have been depleted from the soil exchange complex by acid deposition. This experiment provided an opportunity to gain qualitative information on whole watershed hydrologic flow paths by studying the response of stream water chemistry to the addition of Ca. Because the Ca/Sr and 87Sr/ 86Sr ratios of wollastonite strongly contrast that of other Ca sources in the watershed, the wollastonite-derived Ca can be identified and its amount estimated in various ecosystem components. Stream water chemistry at the HBEF varies seasonally due to shifts in the proportion of base flow and interflow. Prior to the wollastonite application, seasonal variations in 87Sr/ 86Sr ratios indicated that 87Sr/ 86Sr was higher during base flow than interflow, due largely to greater amounts of biotite weathering along deeper flow paths. After the application, Ca/Sr and 87Sr/ 86Sr changed markedly as the high Ca/Sr and low 87Sr/ 86Sr wollastonite dissolved and mixed with stream water. The Ca addition provided information on the response times of various flow paths and ion exchange processes to Ca addition in this small upland watershed. During the first year after the addition, wollastonite applied to the near stream zone dissolved and was partially immobilized by cation exchange sites in the hyporheic zone. In the second and third years after the addition we infer that much of this Ca and Sr was subsequently desorbed from the hyporheic zone and was exported from the watershed in stream flow. In the fourth through ninth years after the addition, Ca and Sr from wollastonite that had dissolved in upland soils was transported to the stream by interflow during wet periods when the ground water table was elevated. Between years three and nine the minimum annual Ca

  10. Improved source assessment of Si, Al and related mineral components to PM10 based on a daily sampling procedure.

    PubMed

    Peng, Ge; Puxbaum, Hans; Bauer, Heidi; Jankowski, Nicole; Shi, Yao

    2010-01-01

    Samples obtained from an industrialized valley in the East Alpine region were collected daily for a half year and analyzed using X-ray fluorescence to examine the elements Si, Al, Fe, Ca, Mg, Na, K, Zn, P, S and Cl. Some factors affecting the changes of these elements were considered, including time, elemental correlations, weekday, weekend and seasonal changes. Diagnostic analysis provided an insight into a decoupling behavior that occursin siliceous and carbonates minerals. A decrease in Si and Al and an increase in carbonates, Na, K, Zn and P were observed during the cold season. However, a consistently high correlation of Si and Al was observed in all seasons. It was established that such high levels originated from street surface abrasion. The increase in variability and absolute levels of carbonates during the cold season was demonstrated by adding carbonates to the street surface as gritting material to increase the grip on snowy surfaces. A marked increase in Na and Cl was observed in winter which may have been caused by thaw salt that is widely used in winter in Austria. This was associated with a significant increase in K, Zn, and P in the cold season that was the result of domestic space heating with wood. PM10 levels in December were 12 microg/m3 and were higher than levels detected in July. It was established that such high levels originated from mineral oxides, wood smoke, and inorganic ionic material(s).

  11. Stem effect of a Ce3+ doped SiO2 optical dosimeter irradiated with a 192Ir HDR brachytherapy source

    NASA Astrophysics Data System (ADS)

    Carrara, Mauro; Tenconi, Chiara; Guilizzoni, Roberta; Borroni, Marta; Cavatorta, Claudia; Cerrotta, Annamaria; Fallai, Carlo; Gambarini, Grazia; Vedda, Anna; Pignoli, Emanuele

    2014-11-01

    Fiber-optic-coupled scintillation dosimeters are characterized by their small active volume if compared to other existing systems. However, they potentially show a greater stem effect, especially in external beam radiotherapy where the Cerenkov effect is not negligible. In brachytherapy, due to the lower energies and the shorter high dose range of the employed sources, the impact of the stem effect to the detector accuracy might be low. In this work, the stem effect of a Ce3+ doped SiO2 scintillation detector coupled to a SiO2 optical fiber was studied for high dose rate brachytherapy applications. Measurements were performed in a water phantom at changing source-detector mutual positions. The same irradiations were performed with a passive optical fiber, which doesn't have the dosimeter at its end. The relative contribution of the passive fiber with respect to the uncorrected readings of the detector in each one of the investigated source dwell positions was evaluated. Furthermore, the dosimeter was calibrated both neglecting and correcting its response for the passive fiber readings. The obtained absolute dose measurements were then compared to the dose calculations resulting from the treatment planning system. Dosimeter uncertainties with and without taking into account the passive fiber readings were generally below 2.8% and 4.3%, respectively. However, a particular exception results when the source is positioned near to the optical fiber, where the detector underestimates the dose (-8%) or at source-detector longitudinal distances higher than 3 cm. The obtained results show that the proposed dosimeter might be adopted in high dose rate prostate brachytherapy with satisfactory accuracy, without the need for any stem effect correction. However, accuracy further improves by subtraction of the noise signal produced by the passive optical fiber.

  12. Effects of Macroscopic Pattern Density and O2 Addition on Chamber Stability during Silicon Nitride Layer Etching in UNITY II-IEM Plasma Source

    NASA Astrophysics Data System (ADS)

    Back, Woon Suck; Kim, Kil Ho; Kim, Jong Il; Lee, Joon Hyun; Won, Yong Sik; Choi, Seon Ho; Hwang, Chung Ho; Lee, Dai Hoon

    2002-04-01

    Effects of the wafer level pattern density on chamber particle generation during silicon nitride (Si3N4) layer etching have been studied in the medium density plasma source, UNITY II-IEM. It was found that the macroscopic pattern density of the etched layer strongly affects the etching environment and subsequently affects the chamber stability. The abrupt change in the macroscopic pattern density of the etched layer, especially when the pattern density is lowered, can sometimes results in the hazardous chamber particle generation. Experiments were performed in order to cope with the chamber particle generation induced by the macroscopic pattern density variation. Controlling the F/C ratio within the plasma by varying the amount of feeding O2 gas was proven to be an efficient way to prevent the occurrence of the chamber particles. Based on our experimental results, the mechanism for the chamber particle generation and that for the reduction will be discussed.

  13. Kinetics and bioenergetics of Spirulina platensis cultivation by fed-batch addition of urea as nitrogen source.

    PubMed

    Sassano, Carlos E N; Carvalho, João C M; Gioielli, Luiz A; Sato, Sunao; Torre, Paolo; Converti, Attilio

    2004-03-01

    The cyanobacterium Spirulina platensis was cultivated in bench-scale miniponds on bicarbonate/carbonate solutions using urea as nitrogen source. To minimize limitation and inhibition phenomena, urea was supplied semicontinuously using exponentially increasing feeding rates. The average growth rates obtained alternately varying the total mass of urea added per unit reactor volume (275 < mT < 725 mg/L) and the total feeding time (9 < tT < 15 d) clearly evidenced nitrogen limitation for mT< 500 mg/L and excess nitrogen inhibition above this threshold. The time behavior of the specific growth rate at variable urea feeding patterns allowed estimation of the time-dependent Gibbs energy dissipation for cell growth under the actual depletion conditions of fed-batch cultivations. Comparison of the yield of growth on Gibbs energy obtained using either urea or KNO3 pointed to the preference of S. platensis for the former nitrogen source, likely owing to more favorable bioenergetic conditions. PMID:15007182

  14. Recent Additions in the Modeling Capabilities of an Open-Source Wave Energy Converter Design Tool: Preprint

    SciTech Connect

    Tom, N.; Lawson, M.; Yu, Y. H.

    2015-04-20

    WEC-Sim is a midfidelity numerical tool for modeling wave energy conversion devices. The code uses the MATLAB SimMechanics package to solve multibody dynamics and models wave interactions using hydrodynamic coefficients derived from frequency-domain boundary-element methods. This paper presents the new modeling features introduced in the latest release of WEC-Sim. The first feature discussed conversion of the fluid memory kernel to a state-space form. This enhancement offers a substantial computational benefit after the hydrodynamic body-to-body coefficients are introduced and the number of interactions increases exponentially with each additional body. Additional features include the ability to calculate the wave-excitation forces based on the instantaneous incident wave angle, allowing the device to weathervane, as well as import a user-defined wave elevation time series. A review of the hydrodynamic theory for each feature is provided and the successful implementation is verified using test cases.

  15. Flatbed scanners as a source of imaging. Brightness assessment and additives determination in a nickel electroplating bath.

    PubMed

    Vidal, M; Amigo, J M; Bro, R; Ostra, M; Ubide, C; Zuriarrain, J

    2011-05-23

    Desktop flatbed scanners are very well-known devices that can provide digitized information of flat surfaces. They are practically present in most laboratories as a part of the computer support. Several quality levels can be found in the market, but all of them can be considered as tools with a high performance and low cost. The present paper shows how the information obtained with a scanner, from a flat surface, can be used with fine results for exploratory and quantitative purposes through image analysis. It provides cheap analytical measurements for assessment of quality parameters of coated metallic surfaces and monitoring of electrochemical coating bath lives. The samples used were steel sheets nickel-plated in an electrodeposition bath. The quality of the final deposit depends on the bath conditions and, especially, on the concentration of the additives in the bath. Some additives become degraded with the bath life and so is the quality of the plate finish. Analysis of the scanner images can be used to follow the evolution of the metal deposit and the concentration of additives in the bath. Principal component analysis (PCA) is applied to find significant differences in the coating of sheets, to find directions of maximum variability and to identify odd samples. The results found are favorably compared with those obtained by means of specular reflectance (SR), which is here used as a reference technique. Also the concentration of additives SPB and SA-1 along a nickel bath life can be followed using image data handled with algorithms such as partial least squares (PLS) regression and support vector regression (SVR). The quantitative results obtained with these and other algorithms are compared. All this opens new qualitative and quantitative possibilities to flatbed scanners.

  16. In situ time-resolved X-ray diffraction of tobermorite formation in autoclaved aerated concrete: Influence of silica source reactivity and Al addition

    SciTech Connect

    Matsui, Kunio; Kikuma, Jun; Tsunashima, Masamichi; Ishikawa, Tetsuji; Matsuno, Shin-ya; Ogawa, Akihiro; Sato, Masugu

    2011-05-15

    The hydrothermal formation of tobermorite during the processing of autoclaved aerated concrete was investigated by in situ X-ray diffraction (XRD) analysis. High-energy X-rays from a synchrotron radiation source in combination with a newly developed autoclave cell and a photon-counting pixel array detector were used. To investigate the effects of the silica source, reactive quartz from chert and less-reactive quartz from quartz sand were used as starting materials. The effect of Al addition on tobermorite formation was also studied. In all cases, C-S-H, hydroxylellestadite and katoite were clearly observed as intermediates. Acceleration of tobermorite formation by Al addition was clearly observed. However, Al addition did not affect the dissolution rate of quartz. Two pathways, via C-S-H and katoite, were also observed in the Al-containing system. These results suggest that the structure of initially formed C-S-H is important for the subsequent tobermorite formation reactions.

  17. Investigating the effect of potential additives and temperature on the dissolution kinetics of olivine (Mg2SiO4) in carbonation reactions

    NASA Astrophysics Data System (ADS)

    Sissmann, O.; Daval, D.; Martinez, I.; Brunet, F.; Findling, N.; Guyot, F. J.

    2010-12-01

    A recent issue in geologic CO2 sequestration in basic rocks has been the slow dissolution kinetics of Mg-rich silicates. Previous batch carbonation studies on olivine [1] (close to forsteritic composition) performed in CO2 saturated water at relevant P,T conditions have focused on the role of secondary phases - such as amorphous silica layers - on the transport of reactants from and to the reactive surfaces. The fluid composition remained roughly constant for the duration of the 45-days experiment, close to saturation with respect to amorphous silica and with a [Mg2+]/[SiO2 (aq)] ratio close to 2, suggesting stoechiometric release. It therefore appears that the silica layer passivates the dissolution step of the reaction, in agreement with its non-porous nature observed by TEM. In order to accelerate this process, various organic ligands were added to the fluids and tested at different concentrations in similar batch experiments. An intrinsic increase of the dissolution rate of olivine was expected [2], [3] prior to the formation of a passivating silica layer. Preliminary results confirm this idea, as Mg was released in non-stoechimoetric proportions with respect to SiO2 (aq) (found to be in equilibrium with amorphous silica observed at the end of the experiments). Similarly, a slight increase of temperature (from 90°C to 120°C) seems to accelerate the reaction kinetics as well, possibly impacting the textural properties of the silica. In additon, since carbonate minerals have a retrograde solubility, thermodynamical modelling suggests this temperature increase should allow the fluid to reach saturation with respect to carbonates before reaching saturation with respect to silica. Enough Mg can therefore be released to initiate the formation of carbonates before the silica precipitates and passivates the olivine surface. Undergoing TEM investigations will allow to characterize this silica layer, and in particular its porosity, in order to better constrain the

  18. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N2O

    USGS Publications Warehouse

    Moseman-Valtierra, Serena; Gonzalez, Rosalinda; Kroeger, Kevin D.; Tang, Jianwu; Chao, Wei Chun; Crusius, John; Bratton, John; Green, Adrian; Shelton, James

    2011-01-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N2O, CH4, and CO2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N2O, CH4 and respiratory CO2fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO3 equivalent to 1.4 g N m−2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N2O and CH4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N2O in July 2009 averaged −33 μmol N2O m−2 day−1. However, within 1 h of nutrient additions, N2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH4 fluxes were not significantly affected. N2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 μmol N2O m−2 day−1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N2O and CH4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N2O and CH4 fluxes observed, exceeded half

  19. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N2O

    USGS Publications Warehouse

    Moseman-Valtierra, S.; Gonzalez, R.; Kroeger, K.D.; Tang, J.; Chao, W.C.; Crusius, J.; Bratton, J.; Green, A.; Shelton, J.

    2011-01-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N2O, CH4, and CO2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N2O, CH4 and respiratory CO2 fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO3 equivalent to 1.4 g N m-2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N2O and CH4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N2O in July 2009 averaged -33 ??mol N2O m-2 day-1. However, within 1 h of nutrient additions, N2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH4 fluxes were not significantly affected. N2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 ??mol N2O m-2 day-1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N2O and CH4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N2O and CH4 fluxes observed, exceeded half the magnitude of typical

  20. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N 2O

    NASA Astrophysics Data System (ADS)

    Moseman-Valtierra, Serena; Gonzalez, Rosalinda; Kroeger, Kevin D.; Tang, Jianwu; Chao, Wei Chun; Crusius, John; Bratton, John; Green, Adrian; Shelton, James

    2011-08-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N 2O, CH 4, and CO 2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N 2O, CH 4 and respiratory CO 2 fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO 3 equivalent to 1.4 g N m -2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N 2O and CH 4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N 2O in July 2009 averaged -33 μmol N 2O m -2 day -1. However, within 1 h of nutrient additions, N 2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH 4 fluxes were not significantly affected. N 2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 μmol N 2O m -2 day -1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N 2O and CH 4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N 2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N 2O and CH 4 fluxes observed, exceeded half

  1. Influence of Na2SiO3 addition on surface microstructure and cavitation damage characteristics for plasma electrolytic oxidation of Al-Mg alloy

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Hyung; Son, Chang-Ryeon; Kim, Seong-Jong

    2016-01-01

    Recently, plasma electrolytic oxidation (PEO) has emerged as a promising surface modification technique to improve surface properties of Al alloys. In this study, PEO coating process for Al-Mg alloy was conducted with two different electrolyte solutions under the same electrical parameters: one was potassium hydroxide (KOH) aqueous solution, and the other involved potassium hydroxide aqueous solution with sodium silicate (Na2SiO3). The surface morphology was observed with scanning electron microscope (SEM) and elemental compositions were identified with energy dispersive spectroscopy (EDS) analysis. The chemical structures of PEO coatings were identified by X-ray diffraction analysis. Cavitation experiment was performed using ultrasonic vibratory cavitation erosion testing apparatus. Cavitation damage of PEO coatings was characterized using SEM and three-dimensional (3D) microscope. The result indicated that the surface of Al-Mg alloy were successfully modified having complete different surface morphologies by changing electrolyte composition. It was found that the surface morphology had a great influence on the cavitation damage behavior of PEO coating.

  2. The influence of Ga additions on electric and magnetic properties of Co{sub 47}Fe{sub 21}B{sub 21}Si{sub 5}Nb{sub 6} alloy in crystal and liquid states

    SciTech Connect

    Sidorov, V. Rojkov, I.; Mikhailov, V.; Svec, P.; Janickovic, D.

    2015-08-17

    The influence of small additions of gallium on electric resistivity and magnetic susceptibility of the bulk glass forming Co{sub 47}Fe{sub 20.9}B{sub 21.2}Si{sub 4.6}Nb{sub 6.3} alloy was studied in a wide temperature range up to 1830 K. Gallium atoms were found to increase resistivity but decrease susceptibility of the alloy. The suppositions about clusters surrounding Ga atoms in the melt and new GFA criterion are given.

  3. Influence of fluoride additions on biological and mechanical properties of Na2O-CaO-SiO2-P2O5 glass-ceramics.

    PubMed

    Li, H C; Wang, D G; Hu, J H; Chen, C Z

    2014-02-01

    Two series of Na2O-CaO-SiO2-P2O5 glass-ceramics doped with NH4HF2 (G-NH4HF2) or CaF2 (G-CaF2) have been prepared by sol-gel method. The glass-ceramic phase composition and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The mechanical properties and thermal expansion coefficient were measured by a microhardness tester, an electronic tensile machine and a thermal expansion coefficient tester. The structure difference between these two glass-ceramics was investigated by Fourier transform infrared spectroscopy (FTIR), and the in vitro bioactivity of the glass-ceramics was determined by in vitro simulated body fluid (SBF) immersion test. The hemolysis test, in vitro cytotoxicity test, systemic toxicity test and the implanted experiment in animals were used to evaluate the biocompatibility of the glass-ceramics. The mechanical properties of sample G-NH4HF2 are lower than that of sample G-CaF2, and the bioactivity of sample G-NH4HF2 is better than that of sample G-CaF2. The thermal expansion coefficients of these two glass-ceramics are all closer to that of Ti6Al4V. After 7 days of SBF immersion, apatites were induced on glass-ceramic surface, indicating that the glass-ceramics have bioactivity. The hemolysis test, in vitro cytotoxicity test and systemic toxicity test demonstrate that the glass-ceramics do not cause hemolysis reaction, and have no toxicity to cell and living animal. The implanted experiment in animals shows that bone tissue can form a good osseointegration with the implant after implantation for two months, indicating that the glass-ceramics are safe to serve as implants.

  4. Influence of fluoride additions on biological and mechanical properties of Na2O-CaO-SiO2-P2O5 glass-ceramics.

    PubMed

    Li, H C; Wang, D G; Hu, J H; Chen, C Z

    2014-02-01

    Two series of Na2O-CaO-SiO2-P2O5 glass-ceramics doped with NH4HF2 (G-NH4HF2) or CaF2 (G-CaF2) have been prepared by sol-gel method. The glass-ceramic phase composition and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The mechanical properties and thermal expansion coefficient were measured by a microhardness tester, an electronic tensile machine and a thermal expansion coefficient tester. The structure difference between these two glass-ceramics was investigated by Fourier transform infrared spectroscopy (FTIR), and the in vitro bioactivity of the glass-ceramics was determined by in vitro simulated body fluid (SBF) immersion test. The hemolysis test, in vitro cytotoxicity test, systemic toxicity test and the implanted experiment in animals were used to evaluate the biocompatibility of the glass-ceramics. The mechanical properties of sample G-NH4HF2 are lower than that of sample G-CaF2, and the bioactivity of sample G-NH4HF2 is better than that of sample G-CaF2. The thermal expansion coefficients of these two glass-ceramics are all closer to that of Ti6Al4V. After 7 days of SBF immersion, apatites were induced on glass-ceramic surface, indicating that the glass-ceramics have bioactivity. The hemolysis test, in vitro cytotoxicity test and systemic toxicity test demonstrate that the glass-ceramics do not cause hemolysis reaction, and have no toxicity to cell and living animal. The implanted experiment in animals shows that bone tissue can form a good osseointegration with the implant after implantation for two months, indicating that the glass-ceramics are safe to serve as implants. PMID:24411365

  5. Characterization of the LiSi/CsBr-LiBr-KBr/FeS(2) System for Potential Use as a Geothermal Borehole Power Source

    SciTech Connect

    GUIDOTTI, RONALD A.; REINHARDT, FREDERICK W.

    1999-10-18

    We are continuing to study the suitability of modified thermal-battery technology as a potential power source for geothermal borehole applications. Previous work focused on the LiSi/FeS{sub 2} couple over a temperature range of 350 C to 400 C with the LiBr-KBr-LiF eutectic, which melts at 324.5 C. In this work, the discharge processes that take place in LiSi/CsBr-LiBr-KBr eutectic/FeS{sub 2} thermal cells were studied at temperatures between 250 C and 400 C using pelletized cells with immobilized electrolyte. The CsBr-LiBr-KBr eutectic was selected because of its lower melting point (228.5 C). Incorporation of a quasi-reference electrode allowed the determination of the relative contribution of each electrode to the overall cell polarization. The results of single-cell tests and limited battery tests are presented, along with preliminary data for battery stacks tested in a simulated geothermal borehole environment.

  6. Kinetics of the addition of olefins to Si-centered radicals: the critical role of dispersion interactions revealed by theory and experiment.

    PubMed

    Johnson, Erin R; Clarkin, Owen J; Dale, Stephen G; DiLabio, Gino A

    2015-06-01

    Solution-phase rate constants for the addition of selected olefins to the triethylsilyl and tris(trimethylsilyl)silyl radicals are measured using laser-flash photolysis and competition kinetics. The results are compared with predictions from density functional theory (DFT) calculations, both with and without dispersion corrections obtained from the exchange-hole dipole moment (XDM) model. Without a dispersion correction, the rate constants are consistently underestimated; the errors increase with system size, up to 10(6) s(-1) for the largest system considered. Dispersion interactions preferentially stabilize the transition states relative to the separated reactants and bring the DFT-calculated rate constants into excellent agreement with experiment. Thus, dispersion interactions are found to play a key role in determining the kinetics for addition reactions, particularly those involving sterically bulky functional groups.

  7. Reducing contralateral SI activity reveals hindlimb receptive fields in the SI forelimb-stump representation of neonatally amputated rats.

    PubMed

    Pluto, Charles P; Chiaia, Nicolas L; Rhoades, Robert W; Lane, Richard D

    2005-09-01

    In adult rats that sustained forelimb amputation on the day of birth, >30% of multiunit recording sites in the forelimb-stump representation of primary somatosensory cortex (SI) also respond to cutaneous hindlimb stimulation when cortical GABA(A+B) receptors are blocked (GRB). This study examined whether hindlimb receptive fields could also be revealed in forelimb-stump sites by reducing one known source of excitatory input to SI GABAergic neurons, the contralateral SI cortex. Corpus callosum projection neurons connect homotopic SI regions, making excitatory contacts onto pyramidal cells and interneurons. Thus in addition to providing monosynaptic excitation in SI, callosal fibers can produce disynaptic inhibition through excitatory synapses with inhibitory interneurons. Based on the latter of these connections, we hypothesized that inactivating the contralateral (intact) SI forelimb region would "unmask" normally suppressed hindlimb responses by reducing the activity of SI GABAergic neurons. The SI forelimb-stump representation was first mapped under normal conditions and then during GRB to identify stump/hindlimb responsive sites. After GRB had dissipated, the contralateral (intact) SI forelimb region was mapped and reversibly inactivated with injections of 4% lidocaine, and selected forelimb-stump sites were retested. Contralateral SI inactivation revealed hindlimb responses in approximately 60% of sites that were stump/hindlimb responsive during GRB. These findings indicate that activity in the contralateral SI contributes to the suppression of reorganized hindlimb receptive fields in neonatally amputated rats.

  8. Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors

    SciTech Connect

    Nag Chowdhury, Basudev; Chattopadhyay, Sanatan

    2014-03-28

    This article studies the impact of doping dependent carrier effective masses of the source/drain regions on transport properties of Si-nanowire field effect transistors within ballistic limit. The difference of carrier effective mass in channel and that in the source/drain regions leads to a misalignment of respective sub-bands and forms non-ideal contacts. Such non-idealities are incorporated by modifying the relevant self-energies which control the effective electronic transport from source to drain through the channel. Non-ideality also arises in the nature of local density of states in the channel due to sub-band misalignment, resulting to a reduction of drain current by almost 50%. The highest values of drain current, leakage current, and their ratio are obtained for the S/D doping concentrations of 3 × 10{sup 20} cm{sup −3}, 8 × 10{sup 20} cm{sup −3}, and 2 × 10{sup 20} cm{sup −3}, respectively, for the nanowire of length 10 nm and diameter of 3 nm. Interestingly, the maximum of sub-threshold swing, minimum of threshold voltage, and the maximum of leakage current are observed to be apparent at the same doping concentration.

  9. Addition Reactions of Me3 SiCN with Aldehydes Catalyzed by Aluminum Complexes Containing in their Coordination Sphere O, S, and N Ligands.

    PubMed

    Yang, Zhi; Yi, Yafei; Zhong, Mingdong; De, Sriman; Mondal, Totan; Koley, Debasis; Ma, Xiaoli; Zhang, Dongxiang; Roesky, Herbert W

    2016-05-10

    The reaction of one equivalent of LAlH2 (1; L=HC(CMeNAr)2 , Ar=2,6-iPr2 C6 H3 , β-diketiminate ligand) with two equivalents of 2-mercapto-4,6-dimethylpyrimidine hydrate resulted in LAl[(μ-S)(m-C4 N2 H)(CH2 )2 ]2 (2) in good yield. Similarly, when N-2-pyridylsalicylideneamine, N-(2,6-diisopropylphenyl)salicylaldimine, and ethyl 3-amino-4,5,6,7-tetrahydrobenzo[b]thiophene-2-carboxylate were used as starting materials, the corresponding products LAl[(μ-O)(o-C6 H4 )CN(C5 NH4 )]2 (3), LAlH[(μ-O)(o-C4 H4 )CN(2,6-iPr2 C6 H3 )] (4), and LAl[(μ-NH)(o-C8 SH8 )(COOC2 H5 )]2 (5) were isolated. Compounds 2-5 were characterized by (1) H and (13) C NMR spectroscopy as well as by single-crystal X-ray structural analysis. Surprisingly, compounds 2-5 exhibit good catalytic activity in addition reactions of aldehydes with trimethylsilyl cyanide (TMSCN).

  10. Ultrahigh B doping ({<=}10{sup 22} cm{sup -3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

    SciTech Connect

    Glass, G.; Kim, H.; Desjardins, P.; Taylor, N.; Spila, T.; Lu, Q.; Greene, J. E.

    2000-03-15

    Si(001) layers doped with B concentrations C{sub B} between 1x10{sup 17} and 1.2x10{sup 22} cm{sup -3} (24 at %) were grown on Si(001)2x1 at temperatures T{sub s}=500-850 degree sign C by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6}. C{sub B} increases linearly with the incident precursor flux ratio J{sub B{sub 2}}{sub H{sub 6}}/J{sub Si{sub 2}}{sub H{sub 6}} and B is incorporated into substitutional electrically active sites at concentrations up to C{sub B}{sup *}(T{sub s}) which, for T{sub s}=600 degree sign C, is 2.5x10{sup 20} cm{sup -3}. At higher B concentrations, C{sub B} increases faster than J{sub B{sub 2}}{sub H{sub 6}}/J{sub Si{sub 2}}{sub H{sub 6}} and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of N{sub B}=1.3x10{sup 21} cm{sup -3} with C{sub B}=1.2x10{sup 22} cm{sup -3}. High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of C{sub B} and T{sub s}, are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction a{sub (perpendicular} {sub sign)} decreases linearly with increasing C{sub B} up to the limit of full electrical activation and continues to decrease, but nonlinearly, with C{sub B}>C{sub B}{sup *}. Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to C{sub B}=2.5x10{sup 20} and 2x10{sup 21} cm{sup -3}, respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage {theta}{sub B,sat} of 0.5 ML (corresponding to C{sub B}=C{sub B}{sup *}). At higher C{sub B} (i.e., {theta}{sub B}>{theta}{sub B,sat}), B accumulates in the upper layer as

  11. Electrophoretic deposition of porous CaO-MgO-SiO2 glass-ceramic coatings with B2O3 as additive on Ti-6Al-4V alloy.

    PubMed

    Zhang, Wei; Chen, Xianchun; Liao, Xiaoming; Huang, Zhongbing; Dan, Xiuli; Yin, Guangfu

    2011-10-01

    The sub-micron glass-ceramic powders in CaO-MgO-SiO(2) system with 10 wt% B(2)O(3) additive were synthesized by sol-gel process. Then bioactive porous CaO-MgO-SiO(2) glass-ceramic coatings on Ti-6Al-4V alloy substrates were fabricated using electrophoretic deposition (EPD) technique. After being calcined at 850°C, the above coatings with thickness of 10-150 μm were uniform and crack-free, possessing porous structure with sub-micron and micron size connected pores. Ethanol was employed as the most suitable solvent to prepare the suspension for EPD. The coating porous appearance and porosity distribution could be controlled by adjusting the suspension concentration, applied voltage and deposition time. The heat-treated coatings possessed high crystalline and was mainly composed of diopside, akermanite, merwinite, calcium silicate and calcium borate silicate. Bonelike apatite was formed on the coatings after 7 days of soaking in simulated body fluid (SBF). The bonding strength of the coatings was needed to be further improved.

  12. The effect of fluoroethylene carbonate additive content on the formation of the solid-electrolyte interphase and capacity fade of Li-ion full-cell employing nano Si-graphene composite anodes

    NASA Astrophysics Data System (ADS)

    Bordes, Arnaud; Eom, KwangSup; Fuller, Thomas F.

    2014-07-01

    When fluoroethylene carbonate (FEC) is added to the ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte, the capacity and cyclability of full-cells employing Si-graphene anode and lithium nickel cobalt aluminum oxide cathode (NCA) cathode are improved due to formation of a thin (30-50 nm) SEI layer with low ionic resistance (∼2 ohm cm2) on the surface of Si-graphene anode. These properties are confirmed with electrochemical impedance spectroscopy and a cross-sectional image analysis using Focused Ion Beam (FIB)-SEM. Approximately 5 wt.% FEC in EC:DEC (1:1 wt.%) shows the highest capacity and most stability. This high capacity and low capacity fade is attributed to a more stable SEI layer containing less CH2OCO2Li, Li2CO3 and LiF compounds, which consume cyclable Li. Additionally, a greater amount of polycarbonate (PC), which is known to form a more robust passivation layer, thus reducing further reduction of electrolyte, is confirmed with X-ray photoelectron spectroscopy (XPS).

  13. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

  14. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

  15. Growth of Si{sub 1{minus}x}Ge{sub x}(011) on Si(011)16{times}2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

    SciTech Connect

    Taylor, N.; Kim, H.; Spila, T.; Eades, J.A.; Glass, G.; Desjardins, P.; Greene, J.E.

    1999-01-01

    Single crystal Si{sub 1{minus}x}Ge{sub x}(011) layers with x{le}0.35 have been grown on double-domain Si(011){open_quotes}16{times}2{close_quotes} surfaces from Si{sub 2}H{sub 6}/Ge{sub 2}H{sub 6} mixtures at temperatures T{sub s}=400{endash}950{degree}C. D{sub 2} temperature programmed desorption was used to show that the structure of the Si(011){open_quotes}16{times}2{close_quotes} surface unit cell, more correctly written as [{sub 2}{sup 17}{sub 2}{sup 1}] since the unit cell vectors are nonorthogonal, is composed of 16 adatoms and eight {pi}-bonded dimers with a dangling bond density half that of the 1{times}1 surface. Si{sub 1{minus}x}Ge{sub x}(011) overlayers are {open_quotes}16{times}2{close_quotes} when x{lt}x{sub c}(T{sub s}) and {open_quotes}2{times}8{close_quotes} with x{gt}x{sub c}(T{sub s}). The value of x{sub c} decreases from {approx_equal} 0.10 at T{sub s}=475{degree}C to 0.08 at 550{degree}C to 0.06 at 650{degree}C. Both the {open_quotes}2{times}8{close_quotes} and {open_quotes}16{times}2{close_quotes} Si{sub 1{minus}x}Ge{sub x}(011) surface reconstructions gradually and reversibly transform to 1{times}1 at T{sub s} between 650 and 725{degree}C. Film growth kinetics exhibit three distinct regimes. At low temperatures (T{sub s}{approx_lt}500{degree}C), the film deposition rate R{sub SiGe} decreases exponentially with 1/T{sub s} in a surface-reaction-limited growth mode for which the rate-limiting step is hydrogen desorption from Si and Ge monohydride phases. R{sub SiGe} becomes essentially constant with T{sub s} in the intermediate impingement-flux-limited range, T{sub s}=500{endash}650{degree}C. At T{sub s}{gt}650{degree}C, R{sub SiGe} increases again with T{sub s} due initially (T{sub s}{approx_equal}650{endash}725{degree}C) to an increase in the steady-state dangling bond coverage as the surface reconstruction gradually transforms to 1{times}1. The continued increase in R{sub SiGe} at even higher T{sub s} is associated with strain

  16. MoSi2-Base Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    2003-01-01

    Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

  17. Growth of carbon-doped base GaAs/AlGaAs HBT by gas-source MBE using TEG, TEA, TMG, AsH3, and Si2H6

    NASA Astrophysics Data System (ADS)

    Ando, Hideyasu; Fujii, Toshio; Sandhu, Adarsh; Takahashi, Tsuyoshi; Ishikawa, Hideaki; Okamoto, Naoya; Yokoyama, Naoki

    1992-05-01

    High-performance carbon-doped-base GaAs/AlGaAs heterobipolar transistors (HBTs) were grown by gas-source MBE using only gaseous sources including dopant sources. The AlGaAs emitter layer was doped with Si from uncracked SI2H6 and the base layer was doped with carbon from TMG. From SIMS analysis it was confirmed that a well-defined emitter-base junction with sharp carbon profile was obtained. The base-current ideality factor from the Gummel plot was 1.47, and the emitter-base junction ideality factor was 1.12. A high dc current gain of 53 was obtained at a current density of 4 x 10 exp 4 A/sq cm. The device characteristics of our carbon-doped HBTs were found to be stable under current stress.

  18. Increasing fermentation efficiency at high sugar concentrations by supplementing an additional source of nitrogen during the exponential phase of the tequila fermentation process.

    PubMed

    Arrizon, Javier; Gschaedler, Anne

    2002-11-01

    In the tequila industry, fermentation is traditionally achieved at sugar concentrations ranging from 50 to 100 g x L(-1). In this work, the behaviour of the Saccharomyces cerevisiae yeast (isolated from the juices of the Agave tequilana Weber blue variety) during the agave juice fermentation is compared at different sugar concentrations to determine if it is feasible for the industry to run fermentation at higher sugar concentrations. Fermentation efficiency is shown to be higher (above 90%) at a high concentration of initial sugar (170 g x L(-1)) when an additional source of nitrogen (a mixture of amino acids and ammonium sulphate, different than a grape must nitrogen composition) is added during the exponential growth phase. PMID:12556124

  19. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    SciTech Connect

    Szymański, Tomasz Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  20. Polyvinyl alcohol gelation: A structural locking-up agent and carbon source for Si/CNT/C composites as high energy lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Chen, Dingqiong; Liao, Wenjuan; Yang, Yang; Zhao, Jinbao

    2016-05-01

    A novel polyvinyl alcohol (PVA) hydrogel method is developed to synthesize Si/CNT/C composites. The Si nanoparticles and CNTs are 'position' locked up by PVA hydrogel in a simple aqueous solution process, and then the Si-CNT-PVA hydrogel has pyrolyzed to form Si/CNT/C composites. In this unique structured Si/CNT/C composites, the CNTs form a porous network acting both as conductive agent for electron transfer and buffer space to accommodate huge Si volume change during lithiation/delithiation process, while the coating layer of carbon carbonized from polyvinyl alcohol (PVA) hydrogel is conducive to stabilize the interweaved composite structure. The complex structures of Si/CNT/C composites and their electrochemical properties are presented in this paper. The Si/CNT/C composites exhibit an initial reversible capacity of nearly 800 mAhg-1, an excellent capacity retention of 97.1% after 100 cycles at the rate of 0.1 C, and high capacity retention even at high current rate.

  1. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    NASA Astrophysics Data System (ADS)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  2. Spectrometric analysis of process etching solutions of the photovoltaic industry--determination of HNO3, HF, and H2SiF6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms.

    PubMed

    Bücker, Stefan; Acker, Jörg

    2012-05-30

    The surface of raw multicrystalline silicon wafers is treated with HF-HNO(3) mixtures in order to remove the saw damage and to obtain a well-like structured surface of low reflectivity, the so-called texture. The industrial production of solar cells requires a consistent level of texturization for tens of thousands of wafers. Therefore, knowing the actual composition of the etch bath is a key element in process control in order to maintain a certain etch rate through replenishment of the consumed acids. The present paper describes a novel approach to quantify nitric acid (HNO(3)), hydrofluoric acid (HF), and hexafluosilicic acid (H(2)SiF(6)) using a high-resolution continuum source graphite furnace absorption spectrometer. The concentrations of Si (via Si atom absorption at the wavelength 251.611 nm, m(0),(Si)=130 pg), of nitrate (via molecular absorption of NO at the wavelength 214.803 nm, [Formula: see text] ), and of total fluoride (via molecular absorption of AlF at the wavelength 227.46 nm, m(0,F)=13 pg) were measured against aqueous standard solutions. The concentrations of H(2)SiF(6) and HNO(3) are directly obtained from the measurements. The HF concentration is calculated from the difference between the total fluoride content, and the amount of fluoride bound as H(2)SiF(6). H(2)SiF(6) and HNO(3) can be determined with a relative uncertainty of less than 5% and recoveries of 97-103% and 96-105%, respectively. With regards to HF, acceptable results in terms of recovery and uncertainty are obtained for HF concentrations that are typical for the photovoltaic industry. The presented procedure has the unique advantage that the concentration of both, acids and metal impurities in etch solutions, can be routinely determined by a single analytical instrument. PMID:22608457

  3. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Fukuda, Koichi; Mori, Takahiro; Mizubayashi, Wataru; Migita, Shinji; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Matsukawa, Takashi; Ota, Hiroyuki

    2016-04-01

    A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

  4. Effect of Bi(Mg1/2Ti1/2)O3 addition on the electrical properties of Si-Mn modified on SrTiO3

    NASA Astrophysics Data System (ADS)

    Roh, Yoon-ah; Masaki, Takaki; Yoon, Dae-Ho

    2015-05-01

    Single-Crystalline Strontium titanate (SrTiO3) has been widely used in many fields such as catalyst, semiconductors and dielectrics. SrTiO3 is a typical perovskite-type oxide, the physical properties of which strongly depend on its chemical composition, structure, shape, size, and crystallinity. In this work, the effects of Bi(Mg1/2Ti1/2)O3 addition on the nanostructure and the dielectric properties of Si-Mn modified SrTiO3 were investigated to develop nano-sized particles and low-temperature-fired SrTiO3-based ceramics with stable temperature characteristics. The dielectric constant of SrTiO3-Bi(Mg1/2Ti1/2)O3 was found to range from 900 to 1200 at 1 kHz for samples sintered at 1200°C. This new composition, SrTiO3-Bi(Mg1/2Ti1/2)O3, can be applied as a nano-sized dielectric materials in various fields.

  5. Ultraviolet Emission Lines of Si ii in Quasars: Investigating the "Si ii Disaster"

    NASA Astrophysics Data System (ADS)

    Laha, Sibasish; Keenan, Francis P.; Ferland, Gary J.; Ramsbottom, Catherine A.; Aggarwal, Kanti M.

    2016-07-01

    The observed line intensity ratios of the Si ii λ1263 and λ1307 multiplets to that of Si ii λ1814 in the broad-line region (BLR) of quasars are both an order of magnitude larger than the theoretical values. This was first pointed out by Baldwin et al., who termed it the “Si ii disaster,” and it has remained unresolved. We investigate the problem in the light of newly published atomic data for Si ii. Specifically, we perform BLR calculations using several different atomic data sets within the CLOUDY modeling code under optically thick quasar cloud conditions. In addition, we test for selective pumping by the source photons or intrinsic galactic reddening as possible causes for the discrepancy, and we also consider blending with other species. However, we find that none of the options investigated resolve the Si ii disaster, with the potential exception of microturbulent velocity broadening and line blending. We find that a larger microturbulent velocity (˜ 500 {km} {{{s}}}-1) may solve the Si ii disaster through continuum pumping and other effects. The CLOUDY models indicate strong blending of the Si ii λ1307 multiplet with emission lines of O i, although the predicted degree of blending is incompatible with the observed λ1263/λ1307 intensity ratios. Clearly, more work is required on the quasar modeling of not just the Si ii lines but also nearby transitions (in particular those of O i) to fully investigate whether blending may be responsible for the Si ii disaster.

  6. Effect of high-pressure/temperature (HP/T) treatments of in-package food on additive migration from conventional and bio-sourced materials.

    PubMed

    Mauricio-Iglesias, M; Jansana, S; Peyron, S; Gontard, N; Guillard, V

    2010-01-01

    Migration was assessed during and after two high-pressure/temperature (HP/T) treatments intended for a pasteurization (800 MPa for 5 min, from 20 to 40 degrees C) and a sterilization treatment (800 MPa for 5 min, from 90 to 115 degrees C) and were compared with conventional pasteurization and sterilization, respectively. The specific migration of actual packaging additives used as antioxidants and ultraviolet light absorbers (Irganox 1076, Uvitex OB) was investigated in a number of food-packaging systems combining one synthetic common packaging (LLDPE) and a bio-sourced one (PLA) in contact with the four food-simulating liquids defined by European Commission regulations. After standard HP/T processing, migration kinetics was followed during the service life of the packaging material using Fourier transform infrared spectrometer (FTIR) spectroscopy. LLDPE withstood the high-pressure sterilization, whereas it melted during the conventional sterilization. No difference was observed on migration from LLDPE for both treatments. In the case of PLA, migration of Uvitex OB was very low or not detectable for all the cases studied. PMID:19809898

  7. Effect of high-pressure/temperature (HP/T) treatments of in-package food on additive migration from conventional and bio-sourced materials.

    PubMed

    Mauricio-Iglesias, M; Jansana, S; Peyron, S; Gontard, N; Guillard, V

    2010-01-01

    Migration was assessed during and after two high-pressure/temperature (HP/T) treatments intended for a pasteurization (800 MPa for 5 min, from 20 to 40 degrees C) and a sterilization treatment (800 MPa for 5 min, from 90 to 115 degrees C) and were compared with conventional pasteurization and sterilization, respectively. The specific migration of actual packaging additives used as antioxidants and ultraviolet light absorbers (Irganox 1076, Uvitex OB) was investigated in a number of food-packaging systems combining one synthetic common packaging (LLDPE) and a bio-sourced one (PLA) in contact with the four food-simulating liquids defined by European Commission regulations. After standard HP/T processing, migration kinetics was followed during the service life of the packaging material using Fourier transform infrared spectrometer (FTIR) spectroscopy. LLDPE withstood the high-pressure sterilization, whereas it melted during the conventional sterilization. No difference was observed on migration from LLDPE for both treatments. In the case of PLA, migration of Uvitex OB was very low or not detectable for all the cases studied.

  8. Estimating PM2.5 Concentrations in Xi'an City Using a Generalized Additive Model with Multi-Source Monitoring Data

    PubMed Central

    Song, Yong-Ze; Yang, Hong-Lei; Peng, Jun-Huan; Song, Yi-Rong; Sun, Qian; Li, Yuan

    2015-01-01

    Particulate matter with an aerodynamic diameter <2.5 μm (PM2.5) represents a severe environmental problem and is of negative impact on human health. Xi'an City, with a population of 6.5 million, is among the highest concentrations of PM2.5 in China. In 2013, in total, there were 191 days in Xi’an City on which PM2.5 concentrations were greater than 100 μg/m3. Recently, a few studies have explored the potential causes of high PM2.5 concentration using remote sensing data such as the MODIS aerosol optical thickness (AOT) product. Linear regression is a commonly used method to find statistical relationships among PM2.5 concentrations and other pollutants, including CO, NO2, SO2, and O3, which can be indicative of emission sources. The relationships of these variables, however, are usually complicated and non-linear. Therefore, a generalized additive model (GAM) is used to estimate the statistical relationships between potential variables and PM2.5 concentrations. This model contains linear functions of SO2 and CO, univariate smoothing non-linear functions of NO2, O3, AOT and temperature, and bivariate smoothing non-linear functions of location and wind variables. The model can explain 69.50% of PM2.5 concentrations, with R2 = 0.691, which improves the result of a stepwise linear regression (R2 = 0.582) by 18.73%. The two most significant variables, CO concentration and AOT, represent 20.65% and 19.54% of the deviance, respectively, while the three other gas-phase concentrations, SO2, NO2, and O3 account for 10.88% of the total deviance. These results show that in Xi'an City, the traffic and other industrial emissions are the primary source of PM2.5. Temperature, location, and wind variables also non-linearly related with PM2.5. PMID:26540446

  9. Estimating PM2.5 Concentrations in Xi'an City Using a Generalized Additive Model with Multi-Source Monitoring Data.

    PubMed

    Song, Yong-Ze; Yang, Hong-Lei; Peng, Jun-Huan; Song, Yi-Rong; Sun, Qian; Li, Yuan

    2015-01-01

    Particulate matter with an aerodynamic diameter <2.5 μm (PM2.5) represents a severe environmental problem and is of negative impact on human health. Xi'an City, with a population of 6.5 million, is among the highest concentrations of PM2.5 in China. In 2013, in total, there were 191 days in Xi'an City on which PM2.5 concentrations were greater than 100 μg/m3. Recently, a few studies have explored the potential causes of high PM2.5 concentration using remote sensing data such as the MODIS aerosol optical thickness (AOT) product. Linear regression is a commonly used method to find statistical relationships among PM2.5 concentrations and other pollutants, including CO, NO2, SO2, and O3, which can be indicative of emission sources. The relationships of these variables, however, are usually complicated and non-linear. Therefore, a generalized additive model (GAM) is used to estimate the statistical relationships between potential variables and PM2.5 concentrations. This model contains linear functions of SO2 and CO, univariate smoothing non-linear functions of NO2, O3, AOT and temperature, and bivariate smoothing non-linear functions of location and wind variables. The model can explain 69.50% of PM2.5 concentrations, with R2 = 0.691, which improves the result of a stepwise linear regression (R2 = 0.582) by 18.73%. The two most significant variables, CO concentration and AOT, represent 20.65% and 19.54% of the deviance, respectively, while the three other gas-phase concentrations, SO2, NO2, and O3 account for 10.88% of the total deviance. These results show that in Xi'an City, the traffic and other industrial emissions are the primary source of PM2.5. Temperature, location, and wind variables also non-linearly related with PM2.5. PMID:26540446

  10. Multichannel 5 × 5-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System

    NASA Astrophysics Data System (ADS)

    Kawano, Takeshi; Takao, Hidekuni; Sawada, Kazuaki; Ishida, Makoto

    2003-04-01

    Multichannel 5 × 5-site Si microprobe electrode array has been developed for neural activity recording. Si microprobes were fabricated successfully at predetermined sites on a chip using Au dots and Si2H6 gas source molecular beam epitaxy (GS-MBE), a method based on vapor-liquid-solid (VLS) growth. Selective VLS Si growth allowed the design of three-dimensional (3D) microprobes with 40 μm spacing in a 5 × 5 array. The diameter and the length of the Si probe can be widely changed by changing the Au dot size and the Si growth time, respectively. In addition, the circular-cone-shaped Si probe has a shape suitable for penetration into neural tissues, and can be realized by increasing growth pressure. The mechanical strength of the Si probe was evaluated with observation of its bending and penetration into a gelatin membrane, which indicated that the Si probes are strong enough to withstand the application. Signal recording with the same amplitude as neural activity was also performed using the fabricated Si probe array chip. These results confirm that high-density neural signals from neural tissues can be obtained with the multichannel 3D VLS Si microprobe array chip.

  11. Effect of combined addition of nano-SiC and nano-Ho2O3 on the in-field critical current density of MgB2 superconductor

    NASA Astrophysics Data System (ADS)

    Varghese, Neson; Vinod, K.; Chattopadhyay, M. K.; Roy, S. B.; Syamaprasad, U.

    2010-01-01

    MgB2 superconducting samples added with nano-Ho2O3 (n-Ho2O3) and/or nano-SiC (n-SiC) have been prepared by an in situ solid state reaction method to investigate and compare the combined and individual effects of n-SiC and n-Ho2O3 on a crystal structure, critical temperature (TC), and critical current density (JC) of MgB2. All the doped samples exhibit significantly enhanced in-field JC and the codoped sample with 2.5 wt % n-Ho2O3 and 5 wt % n-SiC gives the best performance in in-field JC, and the enhancement is around 100 times and 2 times greater than the undoped and monodoped n-SiC samples, respectively, at 5 K and 8 T. For the n-SiC added sample, lattice distortions due to C substitution on the B site and the formation of reacted phase Mg2Si as flux pinners cause enhanced JC up to the maximum field studied (8 T). While in the n-Ho2O3 added sample, a reacted phase HoB4 having a strong magnetic moment forms, without any substitution at the Mg or B site, which acts as a flux pinner in order to enhance the in-field JC. Accordingly the best codoped sample exhibits these combined benefits of n-SiC and n-Ho2O3 in MgB2 superconductor.

  12. The Multi-allelic Genetic Architecture of a Variance-Heterogeneity Locus for Molybdenum Concentration in Leaves Acts as a Source of Unexplained Additive Genetic Variance.

    PubMed

    Forsberg, Simon K G; Andreatta, Matthew E; Huang, Xin-Yuan; Danku, John; Salt, David E; Carlborg, Örjan

    2015-11-01

    Genome-wide association (GWA) analyses have generally been used to detect individual loci contributing to the phenotypic diversity in a population by the effects of these loci on the trait mean. More rarely, loci have also been detected based on variance differences between genotypes. Several hypotheses have been proposed to explain the possible genetic mechanisms leading to such variance signals. However, little is known about what causes these signals, or whether this genetic variance-heterogeneity reflects mechanisms of importance in natural populations. Previously, we identified a variance-heterogeneity GWA (vGWA) signal for leaf molybdenum concentrations in Arabidopsis thaliana. Here, fine-mapping of this association reveals that the vGWA emerges from the effects of three independent genetic polymorphisms that all are in strong LD with the markers displaying the genetic variance-heterogeneity. By revealing the genetic architecture underlying this vGWA signal, we uncovered the molecular source of a significant amount of hidden additive genetic variation or "missing heritability". Two of the three polymorphisms underlying the genetic variance-heterogeneity are promoter variants for Molybdate transporter 1 (MOT1), and the third a variant located ~25 kb downstream of this gene. A fourth independent association was also detected ~600 kb upstream of MOT1. Use of a T-DNA knockout allele highlights Copper Transporter 6; COPT6 (AT2G26975) as a strong candidate gene for this association. Our results show that an extended LD across a complex locus including multiple functional alleles can lead to a variance-heterogeneity between genotypes in natural populations. Further, they provide novel insights into the genetic regulation of ion homeostasis in A. thaliana, and empirically confirm that variance-heterogeneity based GWA methods are a valuable tool to detect novel associations of biological importance in natural populations.

  13. The effectiveness of power-generating complexes constructed on the basis of nuclear power plants combined with additional sources of energy determined taking risk factors into account

    NASA Astrophysics Data System (ADS)

    Aminov, R. Z.; Khrustalev, V. A.; Portyankin, A. V.

    2015-02-01

    The effectiveness of combining nuclear power plants equipped with water-cooled water-moderated power-generating reactors (VVER) with other sources of energy within unified power-generating complexes is analyzed. The use of such power-generating complexes makes it possible to achieve the necessary load pickup capability and flexibility in performing the mandatory selective primary and emergency control of load, as well as participation in passing the night minimums of electric load curves while retaining high values of the capacity utilization factor of the entire power-generating complex at higher levels of the steam-turbine part efficiency. Versions involving combined use of nuclear power plants with hydrogen toppings and gas turbine units for generating electricity are considered. In view of the fact that hydrogen is an unsafe energy carrier, the use of which introduces additional elements of risk, a procedure for evaluating these risks under different conditions of implementing the fuel-and-hydrogen cycle at nuclear power plants is proposed. Risk accounting technique with the use of statistical data is considered, including the characteristics of hydrogen and gas pipelines, and the process pipelines equipment tightness loss occurrence rate. The expected intensities of fires and explosions at nuclear power plants fitted with hydrogen toppings and gas turbine units are calculated. In estimating the damage inflicted by events (fires and explosions) occurred in nuclear power plant turbine buildings, the US statistical data were used. Conservative scenarios of fires and explosions of hydrogen-air mixtures in nuclear power plant turbine buildings are presented. Results from calculations of the introduced annual risk to the attained net annual profit ratio in commensurable versions are given. This ratio can be used in selecting projects characterized by the most technically attainable and socially acceptable safety.

  14. The Multi-allelic Genetic Architecture of a Variance-Heterogeneity Locus for Molybdenum Concentration in Leaves Acts as a Source of Unexplained Additive Genetic Variance

    PubMed Central

    Forsberg, Simon K. G.; Andreatta, Matthew E.; Huang, Xin-Yuan; Danku, John; Salt, David E.; Carlborg, Örjan

    2015-01-01

    Genome-wide association (GWA) analyses have generally been used to detect individual loci contributing to the phenotypic diversity in a population by the effects of these loci on the trait mean. More rarely, loci have also been detected based on variance differences between genotypes. Several hypotheses have been proposed to explain the possible genetic mechanisms leading to such variance signals. However, little is known about what causes these signals, or whether this genetic variance-heterogeneity reflects mechanisms of importance in natural populations. Previously, we identified a variance-heterogeneity GWA (vGWA) signal for leaf molybdenum concentrations in Arabidopsis thaliana. Here, fine-mapping of this association reveals that the vGWA emerges from the effects of three independent genetic polymorphisms that all are in strong LD with the markers displaying the genetic variance-heterogeneity. By revealing the genetic architecture underlying this vGWA signal, we uncovered the molecular source of a significant amount of hidden additive genetic variation or “missing heritability”. Two of the three polymorphisms underlying the genetic variance-heterogeneity are promoter variants for Molybdate transporter 1 (MOT1), and the third a variant located ~25 kb downstream of this gene. A fourth independent association was also detected ~600 kb upstream of MOT1. Use of a T-DNA knockout allele highlights Copper Transporter 6; COPT6 (AT2G26975) as a strong candidate gene for this association. Our results show that an extended LD across a complex locus including multiple functional alleles can lead to a variance-heterogeneity between genotypes in natural populations. Further, they provide novel insights into the genetic regulation of ion homeostasis in A. thaliana, and empirically confirm that variance-heterogeneity based GWA methods are a valuable tool to detect novel associations of biological importance in natural populations. PMID:26599497

  15. Inductively coupled plasma spectrometry: Noise characteristics of aerosols, application of generalized standard additions method, and Mach disk as an emission source

    SciTech Connect

    Shen, Luan

    1995-10-06

    This dissertation is focused on three problem areas in the performance of inductively coupled plasma (ICP) source. The noise characteristics of aerosols produced by ICP nebulizers are investigated. A laser beam is scattered by aerosol and detected by a photomultiplier tube and the noise amplitude spectrum of the scattered radiation is measured by a spectrum analyzer. Discrete frequency noise in the aerosol generated by a Meinhard nebulizer or a direct injection nebulizer is primarily caused by pulsation in the liquid flow from the pump. A Scott-type spray chamber suppresses white noise, while a conical, straight-pass spray chamber enhances white noise, relative to the noise seen from the primary aerosol. Simultaneous correction for both spectral interferences and matrix effects in ICP atomic emission spectrometry (AES) can be accomplished by using the generalized standard additions method (GSAM). Results obtained with the application of the GSAM to the Perkin-Elmer Optima 3000 ICP atomic emission spectrometer are presented. The echelle-based polychromator with segmented-array charge-coupled device detectors enables the direct, visual examination of the overlapping lines Cd (1) 228.802 nm and As (1) 228.812 nm. The slit translation capability allows a large number of data points to be sampled, therefore, the advantage of noise averaging is gained. An ICP is extracted into a small quartz vacuum chamber through a sampling orifice in a water-cooled copper plate. Optical emission from the Mach disk region is measured with a new type of echelle spectrometer equipped with two segmented-array charge-coupled-device detectors, with an effort to improve the detection limits for simultaneous multielement analysis by ICP-AES.

  16. Band offsets in c-Si/Si-XII heterojunctions

    NASA Astrophysics Data System (ADS)

    Mustafa, Jamal I.; Malone, Brad D.; Cohen, Marvin L.; Louie, Steven G.

    2014-08-01

    Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I-V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be ΔEv=0.3 eV and ΔEc=0.5 eV for the valence bands and conduction bands, respectively.

  17. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Kolahdouz, M.; Luo, Jun; Yin, Huaxing; Yang, Ping; Li, Junfeng; Zhu, Huilong; Chao, Zhao; Ye, Tianchun; Radamson, Henry H.

    2016-10-01

    A complete mapping of 14 nm FinFETs performance over 200 mm wafers was performed and the pattern dependency of SiGe selective growth was calculated using an empirical kinetic molecule model for the reactant precursors. The transistor structures were analyzed by conventional characterization tools and their performance was simulated by considering the process related variations. The applied model presents for the first time a powerful tool for transistor community to predict the SiGe profile and strain modulating over a processed wafer, independent of wafer size.

  18. Sol-gel synthesis and luminescence of unexpected microrod crystalline Ca 5La 5(SiO 4) 3(PO 4) 3O 2:Dy 3+ phosphors employing different silicate sources

    NASA Astrophysics Data System (ADS)

    Yan, Bing; Huang, Honghua

    2007-08-01

    Ca5La5(SiO4)3(PO4)3O2 doped with Dy3+ were synthesized by sol-gel technology with hybrid precursor employed four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM diagraphs show that there exist some novel unexpected morphological structures of microrod owing to the crosslinking reagents than TEOS as silicate source for their amphipathy template effect. X-ray pictures confirm that Ca5La5(SiO4)3(PO4)3O2:Dy3+ compound is formed by a pure apatitic phase. The Dy3+ ions could emit white light in Ca5La5(SiO4)3(PO4)3O2 compound, and the ratio of Y/B is 1.1, when the Dy3+ doped concentration is 1.0 mol%.

  19. SI Notes.

    ERIC Educational Resources Information Center

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  20. Astrometrically registered simultaneous observations of the 22 GHz H{sub 2}O and 43 GHz SiO masers toward R Leonis Minoris using KVN and source/frequency phase referencing

    SciTech Connect

    Dodson, Richard; Rioja, María J.; Jung, Tae-Hyun; Sohn, Bong-Won; Byun, Do-Young; Cho, Se-Hyung; Lee, Sang-Sung; Kim, Jongsoo; Kim, Kee-Tae; Oh, Chung-Sik; Han, Seog-Tae; Je, Do-Heung; Chung, Moon-Hee; Wi, Seog-Oh; Kang, Jiman; Lee, Jung-Won; Chung, Hyunsoo; Kim, Hyo-Ryoung; Kim, Hyun-Goo; Lee, Chang-Hoon; and others

    2014-11-01

    Oxygen-rich asymptotic giant branch (AGB) stars can be intense emitters of SiO (v = 1 and 2, J = 1 → 0) and H{sub 2}O maser lines at 43 and 22 GHz, respectively. Very long baseline interferometry (VLBI) observations of the maser emission provide a unique tool to probe the innermost layers of the circumstellar envelopes in AGB stars. Nevertheless, the difficulties in achieving astrometrically aligned H{sub 2}O and v = 1 and v = 2 SiO maser maps have traditionally limited the physical constraints that can be placed on the SiO maser pumping mechanism. We present phase-referenced simultaneous spectral-line VLBI images for the SiO v = 1 and v = 2, J = 1 → 0, and H{sub 2}O maser emission around the AGB star R LMi, obtained from the Korean VLBI Network (KVN). The simultaneous multi-channel receivers of the KVN offer great possibilities for astrometry in the frequency domain. With this facility, we have produced images with bona fide absolute astrometric registration between high-frequency maser transitions of different species to provide the positions of the H{sub 2}O maser emission and the center of the SiO maser emission, hence reducing the uncertainty in the proper motions for R LMi by an order of magnitude over that from Hipparcos. This is the first successful demonstration of source frequency phase referencing for millimeter VLBI spectral-line observations and also where the ratio between the frequencies is not an integer.

  1. Food additives

    PubMed Central

    Spencer, Michael

    1974-01-01

    Food additives are discussed from the food technology point of view. The reasons for their use are summarized: (1) to protect food from chemical and microbiological attack; (2) to even out seasonal supplies; (3) to improve their eating quality; (4) to improve their nutritional value. The various types of food additives are considered, e.g. colours, flavours, emulsifiers, bread and flour additives, preservatives, and nutritional additives. The paper concludes with consideration of those circumstances in which the use of additives is (a) justified and (b) unjustified. PMID:4467857

  2. Ultra-highly doped Si{sub 1-x}Ge{sub x}(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

    SciTech Connect

    Kim, H.; Glass, G.; Desjardins, P.; Greene, J. E.

    2001-01-01

    Si{sub 1-x}Ge{sub x}(001) layers doped with B concentrations C{sub B} between 2x10{sup 16} and 2x10{sup 21}cm{sup -3} were grown on Si(001)2x1 at T{sub s}=500--700{sup o}C by gas-source molecular-beam epitaxy (GS-MBE) from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}. Secondary-ion mass spectrometry measurements of modulation-doped structures demonstrate that B doping has no effect on the Ge incorporation probability. Steady-state B and Ge surface coverages ({theta}{sub B} and {theta}{sub Ge}) were determined as a function of C{sub B} using in situ isotopically tagged temperature-programmed desorption. Results for Si{sub 0.82}Ge{sub 0.18} layers grown at T{sub s}=500{sup o}C show that {theta}{sub Ge} remains constant at 0.63 ML while the bulk B concentration increases linearly up to 4.6x10{sup 20}cm{sup -3}, corresponding to saturation coverage at {theta}{sub B,sat}=0.5ML, with the incident precursor flux ratio {xi}=J{sub B{sub 2}H{sub 6}}/(J{sub Si{sub 2}H{sub 6}}+J{sub Ge{sub 2}H{sub 6}}). B is incorporated into substitutional electrically active sites over this entire concentration range. At higher B concentrations, C{sub B} increases faster than {xi} and there is a large decrease in the activated fraction of incorporated B. The B segregation enthalpy during Si{sub 0.82}Ge{sub 0.18}(001) growth is -0.42 eV, compared to -0.53 and -0.64 eV during Si(001):B and Ge(001):B GS-MBE, respectively. Measured segregation ratios r{sub B}={theta}{sub B}/x{sub B}, where x{sub B} is the bulk B fraction, range from 15 to 500 with a temperature dependence which is consistent with equilibrium segregation. Film deposition rates R{sub SiGe}(C{sub B}) decrease by up to a factor of 2 with increasing C{sub B}{>=}5x10{sup 19}cm{sup -3}, due primarily to a B-segregation-induced decrease in the dangling bond density. The above results were used to develop a robust model for predicting the steady-state H coverage {theta}{sub H}, {theta}{sub B}, {theta}{sub Ge}, and R{sub Si

  3. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  4. Effect of ZrO(2) additions on the crystallization, mechanical and biological properties of MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics.

    PubMed

    Li, H C; Wang, D G; Meng, X G; Chen, C Z

    2014-06-01

    A series of ZrO(2) doped MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics were obtained by sintering method. The crystallization behavior, phase composition, morphology and structure of glass-ceramics were characterized. The bending strength, elastic modulus, fracture toughness, micro-hardness and thermal expansion coefficient (TEC) of glass-ceramics were investigated. The in vitro bioactivity and cytotoxicity tests were used to evaluate the bioactivity and biocompatibility of glass-ceramics. The sedimentation mechanism and growth process of apatites on sample surface were discussed. The results showed that the mainly crystalline phases of glass-ceramics were Ca(5)(PO4)3F (fluorapatite) and β-CaSiO(3). (β-wollastonite). m-ZrO(2) (monoclinic zirconia) declined the crystallization temperatures of glasses. t-ZrO(2) (tetragonal zirconia) increased the crystallization temperature of Ca(5)(PO4)(3)F and declined the crystallization temperature of β-CaSiO(3). t-ZrO(2) greatly increased the fracture toughness, bending strength and micro-hardness of glass-ceramics. The nanometer apatites were induced on the surface of glass-ceramic after soaking 28 days in SBF (simulated body fluid), indicating the glass-ceramic has good bioactivity. The in vitro cytotoxicity test demonstrated the glass-ceramic has no toxicity to cell.

  5. SI: The Stellar Imager

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  6. Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

    PubMed Central

    2013-01-01

    We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. PMID:23289520

  7. The Stellar Imager (SI) Vision Mission and the Benefits of an Ares V Launch

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth F.

    2008-01-01

    The Stellar Imager (SI) is a UV/Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. In this paper we briefly discuss the science goals, technology needs, and baseline design of the SI Mission, and then describe the benefits to the mission that a launch on an Ares V, with its larger payload shroud, would produce. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  8. Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots

    NASA Astrophysics Data System (ADS)

    Freeman, Blake M.; Schoenfield, Joshua S.; Jiang, HongWen

    2016-06-01

    We investigate and compare the charge noise in Si/SiO2 and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO2 compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO2 is a potential candidate for spin based quantum computing.

  9. Substrate-Free Self-Assembled SiOx-Core Nanodots from Alkylalkoxysilane as a Multicolor Photoluminescence Source for Intravital Imaging

    PubMed Central

    Lin, Pei-Ying; Hsieh, Chiung-Wen; Kung, Mei-Lang; Hsieh, Shuchen

    2013-01-01

    Intravital fluorescence imaging has great potential in biological and biomedical research, as it provides the ability to directly observe biological structures and processes in their natural state. Contrast agents for intravital imaging applications should exhibit good biocompatibility, multiphoton fluorescence, and long emission. Carbon nanodots and semiconductor nanocrystals meet these requirements in most cases, with the added benefit that their properties can be ‘tuned' for specific applications by controlling the size and surface chemistry of the nanoparticles. Here, we report on a simple heat-assisted strategy to fabricate SiOx-core self-assembled nanodots using self-assembled monolayer (SAM) materials. Our results demonstrate that substrate-free self-assembled nanodots from alkylalkoxysilane exhibit controllable structural and chemical characteristics that are well suited for applications in biological, biomedical, and clinical research, and may find further use in optoelectronic and sensor devices. PMID:23609156

  10. Field-scale investigation of enhanced petroleum hydrocarbon biodegradation in the vadose zone combining soil venting as an oxygen source with moisture and nutrient addition. Doctoral thesis

    SciTech Connect

    Miller, R.N.

    1990-01-01

    Soil venting is effective for the physical removal of volatile hydrocarbons from unsaturated soils, and is also effective as a source of oxygen for biological degradation of the volatile and non-volatile fractions of hydrocarbons in contaminated soil. Treatment of soil venting off-gas is expensive, constituting a minimum of 50% of soil venting remediation costs. In this research, methods for enhancing biodegradation through soil venting were investigated, with the goal of eliminating the need for expensive off-gas treatment. A seven-month field investigation was conducted at Tyndall Air Force Base (AFB), Florida, where past jet fuel storage had resulted in contamination of a sandy soil. The contaminated area was dewatered to maintain approximately 1.6 meters of unsaturated soil. Soil hydrocarbon concentrations ranged from 30 to 23,000 mg/kg. Contaminated and uncontaminated test plots were vented for 188 days. Venting was interrupted five times during operation to allow for measurement of biological activity (CO{sub 2} production and O{sub 2} consumption) under varying moisture and nutrient conditions.

  11. Potential biofuel additive from renewable sources--Kinetic study of formation of butyl acetate by heterogeneously catalyzed transesterification of ethyl acetate with butanol.

    PubMed

    Ali, Sami H; Al-Rashed, Osama; Azeez, Fadhel A; Merchant, Sabiha Q

    2011-11-01

    Butyl acetate holds great potential as a sustainable biofuel additive. Heterogeneously catalyzed transesterification of biobutanol and bioethylacetate can produce butyl acetate. This route is eco-friendly and offers several advantages over the commonly used Fischer Esterification. The Amberlite IR 120- and Amberlyst 15-catalyzed transesterification is studied in a batch reactor over a range of catalyst loading (6-12 wt.%), alcohol to ester feed ratio (1:3 to 3:1), and temperature (303.15-333.15K). A butanol mole fraction of 0.2 in the feed is found to be optimum. Amberlite IR 120 promotes faster kinetics under these conditions. The transesterifications studied are slightly exothermic. The moles of solvent sorbed per gram of catalyst decreases (ethanol>butanol>ethyl acetate>butyl acetate) with decrease in solubility parameter. The dual site models, the Langmuir Hinshelwood and Popken models, are the most successful in correlating the kinetics over Amberlite IR 120 and Amberlyst 15, respectively.

  12. Ultrasound assisted siRNA delivery using PEG-siPlex loaded microbubbles.

    PubMed

    Vandenbroucke, Roosmarijn E; Lentacker, Ine; Demeester, Joseph; De Smedt, Stefaan C; Sanders, Niek N

    2008-03-20

    Short interfering RNA (siRNA) attracts much attention for the treatment of various diseases. However, its delivery, especially via systemic routes, remains a challenge. Indeed, naked siRNAs are rapidly degraded, while complexed siRNAs massively aggregate in the blood or are captured by macrophages. Although this can be circumvented by PEGylation, we found that PEGylation had a strong negative effect on the gene silencing efficiency of siRNA-liposome complexes (siPlexes). Recently, ultrasound combined with microbubbles has been used to deliver naked siRNA but the gene silencing efficiency is rather low and very high amounts of siRNA are required. To overcome the negative effects of PEGylation and to enhance the efficiency of ultrasound assisted siRNA delivery, we coupled PEGylated siPlexes (PEG-siPlexes) to microbubbles. Ultrasound radiation of these microbubbles resulted in massive release of unaltered PEG-siPlexes. Interestingly, PEG-siPlexes loaded on microbubbles were able to enter cells after exposure to ultrasound, in contrast to free PEG-siPlexes, which were not able to enter cells rapidly. Furthermore, these PEG-siPlex loaded microbubbles induced, in the presence of ultrasound, much higher gene silencing than free PEG-siPlexes. Additionally, the PEG-siPlex loaded microbubbles only silenced the expression of genes in the presence of ultrasound, which allows space and time controlled gene silencing.

  13. Kilogram-scale production of SnO(2) yolk-shell powders by a spray-drying process using dextrin as carbon source and drying additive.

    PubMed

    Choi, Seung Ho; Kang, Yun Chan

    2014-05-01

    A simple and general method for the large-scale production of yolk-shell powders with various compositions by a spray-drying process is reported. Metal salt/dextrin composite powders with a spherical and dense structure were obtained by spray drying and transformed into yolk-shell powders by simple combustion in air. Dextrin plays a key role in the preparation of precursor powders for fabricating yolk-shell powders by spray drying. Droplets containing metal salts and dextrin show good drying characteristics even in a severe environment of high humidity. Sucrose, glucose, and polyvinylpyrrolidone are widely used as carbon sources in the preparation of metal oxide/carbon composite powders; however, they are not appropriate for large-scale spray-drying processes because of their caramelization properties and adherence to the surface of the spray dryer. SnO2 yolk-shell powders were studied as the first target material in the spray-drying process. Combustion of tin oxalate/dextrin composite powders at 600 °C in air produced single-shelled SnO2 yolk-shell powders with the configuration SnO2 @void@SnO2 . The SnO2 yolk-shell powders prepared by the simple spray-drying process showed superior electrochemical properties, even at high current densities. The discharge capacities of the SnO2 yolk-shell powders at a current density of 2000 mA g(-1) were 645 and 570 mA h g(-1) for the second and 100th cycles, respectively; the corresponding capacity retention measured for the second cycle was 88 %.

  14. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Kyung, Se Jin; Yeom, Geun Young

    2008-10-01

    Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called "pin-to-plate DBD." The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200-800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1-10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C-F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

  15. Response of fumaric Acid addition on methanogenesis, rumen fermentation, and dry matter degradability in diets containing wheat straw and sorghum or berseem as roughage source.

    PubMed

    Sirohi, S K; Pandey, Poonam; Goel, Navneet

    2012-01-01

    An in vitro incubation system was used to evaluate effect of supplementation of fumaric acid at 0, 5, 10, and 15 mM concentration in high-, medium-, and low-fiber wheat straw containing total mixed diets with sorghum (Sorghum vulgare) and berseem clover (Trifolium alexandrinum L.) on rumen fermentation, methane production, and gas kinetics parameters. Three types of diets were prepared with different roughage and concentrate ratio (80 : 20, 50 : 50, and 20 : 80) by taking the representative samples. The roughage part composed of wheat straw (70 parts) and sorghum (30 parts) or berseem (30 parts) and the concentrate part composed of maize (33%), GNC (21%), mustard cake (12%), wheat bran (20%), deoiled rice bran (11%), mineral mixture (2%), and salt (1%). Fumaric acid was added in incubation medium to achieve final concentration of 0, 5, 10, and 15 mM. All the treatment combinations were arranged in 4 × 3 factorial designs with three replicates. It was concluded from the study that fumaric acid addition (5-15 mM) in diets varying in roughage to concentrate ratio significantly (P ≤ 0.05) reduced the methane production without affecting dry matter digestibility and maximum reduction was noticed at 5 mM concentration.

  16. Voyager 1/UVS measurements of the backscattered solar Lyman-alpha emission at the distant heliosphere: unknown source of additional emission

    NASA Astrophysics Data System (ADS)

    Katushkina, Olga; Alexashov, Dmitry; Sandel, Bill R.; Izmodenov, Vladislav; Quemerais, Eric

    2016-07-01

    Voyager 1/UVS has been performing measurements of the backscattered solar Lyman-alpha intensities for more than 35 years at distances 5-130 AU from the Sun. Backscattered Lyman-alpha emission depends on the interstellar hydrogen distribution in the solar wind / LISM interaction region. Therefore, measurement of the Lyman-alpha intensities is a tool for remote sensing of the hydrogen parameters at the heliospheric boundary. It is interesting to study dependence of the Lyman-alpha intensities on distance from the Sun. Namely, the Voyager 1 data show decrease of intensity (after correction for the solar flux variations) from 5 to 90 AU (1979-2003), then almost constant intensity between 90 and 115 AU (2003-2011), and decrease of intensity again at 115-130 AU (2011-2014). We perform numerical modeling and an analysis of the data by using our kinetic-MHD heliospheric model (Izmodenov & Alexashov, 2015) and the radiative transfer code (Quemerais, 2000). It is shown that the data obtained up to 90 AU (before 2003) can be fitted by the model quite well. After that the model predicts decrease of intensity, while the data show almost constant values. This behavior can be explained by addition to the model some portion of isotropic "extraheliospheric" Lyman-alpha emission, which does not scattered in the heliosphere and does not depend on the solar Lyman-alpha flux.

  17. Phase transformation and characterization of TiO{sub 2} and ZrO{sub 2} addition in the Li{sub 2}O{endash}Al{sub 2}O{sub 3}{endash}SiO{sub 2} gels

    SciTech Connect

    Lin, M.; Wang, M.

    1996-10-01

    Glass-ceramic powders with a composition of Li{sub 2}O{center_dot}Al{sub 2}O{sub 3}{center_dot}4SiO{sub 2} (LAS) have been synthesized by the sol-gel technique using LiOCH{sub 3}, Al(OC{sub 2}H{sub 5}){sub 3}, Si(OC{sub 2}H{sub 5}){sub 4}, Ti(OC{sub 2}H{sub 5}){sub 4}, and Zr(OC{sub 2}H{sub 5}){sub 4} as starting materials and investigated and the phase transformation behavior during calcination. Differential thermal analysis (DTA), x-ray diffraction (XRD), and scanning electron microscopy (SEM) were utilized to determine the thermal behavior of the gels. Considering the LAS gels with TiO{sub 2} 6.0 wt.{percent} and various wt.{percent} ZrO{sub 2} content, the peak position of {beta}-spodumene phase formation in DTA curves was shifted to a higher temperature when the ZrO{sub 2} content was increased. The activation energy of {beta}-spodumene crystallization was 283.8 kcal/mol for LAS gels with TiO{sub 2} 6.0 wt.{percent} and 2.0 wt.{percent} ZrO{sub 2}. Unlike foregoing studies for LAS gels, during calcination of the dried LASTZ gels from 800{degree}C to 1200{degree}C neither {beta}-eucryptite, nor {gamma}-spodumene was noted to be present. The crystallized phases comprised of {beta}-spodumenes as the major phase and rutile (TiO{sub 2}) together with zirconia (ZrO{sub 2}) are precipitated as minor phases. {copyright} {ital 1996 Materials Research Society.}

  18. Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si39, Si40, Si50, Si60, Si70, and Si80

    NASA Astrophysics Data System (ADS)

    Yoo, Soohaeng; Shao, N.; Zeng, X. C.

    2008-03-01

    We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si39, Si40, Si50, Si60, Si70, and Si80. We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si39, we examined six endohedral fullerene structures using all six homolog C34 fullerene isomers as cage motifs. We found that the Si39 constructed based on the C34(Cs:2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C34(Cs:2) cage motif also leads to a new candidate for the lowest-energy structure of Si40 whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C34(C1:1). Low-lying structures of larger silicon clusters Si50 and Si60 are also obtained on the basis of preconstructed endohedral fullerene structures. For Si50, Si60, and Si80, the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si50.

  19. Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80).

    PubMed

    Yoo, Soohaeng; Shao, N; Zeng, X C

    2008-03-14

    We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80). We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si(39), we examined six endohedral fullerene structures using all six homolog C(34) fullerene isomers as cage motifs. We found that the Si(39) constructed based on the C(34)(C(s):2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C(34)(C(s):2) cage motif also leads to a new candidate for the lowest-energy structure of Si(40) whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C(34)(C(1):1). Low-lying structures of larger silicon clusters Si(50) and Si(60) are also obtained on the basis of preconstructed endohedral fullerene structures. For Si(50), Si(60), and Si(80), the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10 meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si(50).

  20. Identification of Exotic SiC Grains from the Murchison Meteorite by Ion Imaging

    NASA Astrophysics Data System (ADS)

    Nittler, L. R.; Amari, S.; Walker, R. M.; Zinner, E. K.; Lewis, R. S.

    1993-07-01

    Previous ion microprobe analyses of individual interstellar SiC grains from primitive meteorites have revealed a small fraction (<=1%) of grains (X grains) whose isotopic compositions differ markedly from those of the majority of grains [1,2]. "Mainstream" SiC is characterized by enriched ^13C, ^14N, ^29Si, ^30Si, ^46Ti, ^47Ti, ^49Ti, and ^50Ti relative to solar composition, and is thought to have formed in AGB stars [3]. X grains, on the other hand, have large depletions in ^29Si and ^30Si, as well as light carbon, heavy N, enriched ^49Ti, and (^26Al/^27Al)(sub)o ratios some 2-3 orders of magnitude higher than typical SiC. Amari et al. have argued that the most likely sources for X grains are supernovae [1]. To better characterize these rare grains and to delineate their astrophysical sources, we have used an ion imaging system [4] to more efficiently locate exotic SiC grains. Images in ^28Si and ^30Si were digitized by a CCD camera and 30Si/28Si ratios of individual grains were determined by image processing. Over a period of three days, we mapped the ^30Si/^28Si ratios in some 1250 2- 4-micrometer grains from the Murchison separate KJG, and located nine grains with large depletions in ^30Si. Subsequent measurements at high mass resolution of Si, C, and N isotopes in these grains confirmed the ^30Si depletions and showed isotopic signatures similar to those of the previously studied X grains. Measurements of Mg, Ca and Ti isotopes are planned for these grains. Silicon isotopic data for both the nine new grains and seven previously studied X grains are shown in Fig. 1; these grains all lie deep inside the ^28Si-enriched quadrant. Seven of the new grains lie close to a line defined by most previous X grains, but two, 47-3 and 103-1, lie near X2, which falls on a mixing line of solar composition with pure ^28Si. In addition to its distinctive Si isotopic composition, grain X2 shows a large excess of ^44Ca (300%) not seen in other grains. Additional Ca isotopic

  1. Diffusion of Si in thin CoSi2 layers

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Evidence of silicon diffusion in 100-A CoSi2 layers grown by room-temperature codeposition and annealing on Si(111) substrates was from Auger peak height ratios, which were interpreted in terms of a Si overlayer. It was found that this layer could be removed by chemical etching and reformed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the CoL23 VV Auger peak, the effective thickness of the Si overlayer was measured as a function of annealing temperature, by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. Similar results were found for samples grown both with and without the addition of a 10-A Si cap to prevent pinhole formation in the CoSi2; moreover, Si diffusion was also observed at temperatures well below the point where pinhole formation is first found, suggesting that Si diffusion does not depend on the presence of observable pinholes.

  2. Phosphazene additives

    DOEpatents

    Harrup, Mason K; Rollins, Harry W

    2013-11-26

    An additive comprising a phosphazene compound that has at least two reactive functional groups and at least one capping functional group bonded to phosphorus atoms of the phosphazene compound. One of the at least two reactive functional groups is configured to react with cellulose and the other of the at least two reactive functional groups is configured to react with a resin, such as an amine resin of a polycarboxylic acid resin. The at least one capping functional group is selected from the group consisting of a short chain ether group, an alkoxy group, or an aryloxy group. Also disclosed are an additive-resin admixture, a method of treating a wood product, and a wood product.

  3. Potlining Additives

    SciTech Connect

    Rudolf Keller

    2004-08-10

    In this project, a concept to improve the performance of aluminum production cells by introducing potlining additives was examined and tested. Boron oxide was added to cathode blocks, and titanium was dissolved in the metal pool; this resulted in the formation of titanium diboride and caused the molten aluminum to wet the carbonaceous cathode surface. Such wetting reportedly leads to operational improvements and extended cell life. In addition, boron oxide suppresses cyanide formation. This final report presents and discusses the results of this project. Substantial economic benefits for the practical implementation of the technology are projected, especially for modern cells with graphitized blocks. For example, with an energy savings of about 5% and an increase in pot life from 1500 to 2500 days, a cost savings of $ 0.023 per pound of aluminum produced is projected for a 200 kA pot.

  4. Additional food folate derived exclusively from natural sources improves folate status in young women with the MTHFR 677 CC or TT genotype.

    PubMed

    Hung, Jean; Yang, Tai Li; Urrutia, Tania F; Li, Rui; Perry, Cydne A; Hata, Hiroko; Cogger, Edward A; Moriarty, David J; Caudill, Marie A

    2006-11-01

    The effectiveness of additional food folate in improving folate status in humans is uncertain particularly in people with the common genetic variant (677 C-->T) in the methylenetetrahydrofolate reductase (MTHFR) gene. To examine the effect of a doubling of food folate consumption on folate status response variables, women (n=32; 18-46 years) with the MTHFR 677 CC or TT genotype consumed either 400 (n=15; 7 CC and 8 TT) or 800 (n=17; 8 CC and 9 TT) microg/day of dietary folate equivalents (DFE) derived exclusively from naturally occurring food folate for 12 weeks. A repeated measures two-factor ANOVA was used to examine the effect of the dietary treatment, the MTHFR C677T genotype and their interactions on serum folate, RBC folate and plasma total homocysteine (tHcy) during the last 3 weeks of the study. Consumption of 800 microg DFE/day resulted in serum folate concentrations that were 67% (P=.005) higher than consumption of 400 microg DFE/day (18.6+/-2.9 vs. 31.0+/-2.7 nmol/L, respectively) and RBC folate concentrations that were 33% (P=.001) higher (1172+/-75 vs. 1559+/-70 nmol/L, respectively). Serum folate (P=.065) and RBC folate (P=.022) concentrations were lower and plasma tHcy was higher (P=.039) in women with the MTHFR 677 TT genotype relative to the CC genotype. However, no genotype by dietary treatment interaction was detected. These data suggest that a doubling of food folate intake will lead to marked improvements in folate status in women with the MTHFR 677 CC or TT genotype.

  5. NGSI student activities in open source information analysis in support of the training program of the U.S. DOE laboratories for the entry into force of the additional protocol

    SciTech Connect

    Sandoval, M Analisa; Uribe, Eva C; Sandoval, Marisa N; Boyer, Brian D; Stevens, Rebecca S

    2009-01-01

    In 2008 a joint team from Los Alamos National Laboratory (LANL) and Brookhaven National Laboratory (BNL) consisting of specialists in training of IAEA inspectors in the use of complementary access activities formulated a training program to prepare the U.S. Doe laboratories for the entry into force of the Additional Protocol. As a major part of the support of the activity, LANL summer interns provided open source information analysis to the LANL-BNL mock inspection team. They were a part of the Next Generation Safeguards Initiative's (NGSI) summer intern program aimed at producing the next generation of safeguards specialists. This paper describes how they used open source information to 'backstop' the LANL-BNL team's effort to construct meaningful Additional Protocol Complementary Access training scenarios for each of the three DOE laboratories, Lawrence Livermore National Laboratory, Idaho National Laboratory, and Oak Ridge National Laboratory.

  6. Tailoring of Boehmite-Derived Aluminosilicate Aerogel Structure and Properties: Influence of Ti Addition

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Guo, Haiquan; Sheets, Erik J.; Miller, Derek R.; Newlin, Katy N.

    2010-01-01

    Aluminosilicate aerogels offer potential for extremely low thermal conductivities at temperatures greater than 900 C, beyond where silica aerogels reach their upper temperature limits. Aerogels have been synthesized at various Al:Si ratios, including mullite compositions, using Boehmite (AlOOH) as the Al source, and tetraethoxy orthosilicate as the Si precursor. The Boehmite-derived aerogels are found to form by a self-assembly process of AlOOH crystallites, with Si-O groups on the surface of an alumina skeleton. Morphology, surface area and pore size varies with the crystallite size of the starting Boehmite powder, as well as with synthesis parameters. Ternary systems, including Al-Si-Ti aerogels incorporating a soluble Ti precursor, are possible with careful control of pH. The addition of Ti influences sol viscosity, gelation time pore structure and pore size distribution, as well as phase formation on heat treatment.

  7. Structural characterization of annealed Si{sub 1-x}C{sub x}/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

    SciTech Connect

    Song Dengyuan; Cho, Eun-Chel; Conibeer, Gavin; Huang Yidan; Flynn, Chris; Green, Martin A.

    2008-04-15

    Amorphous Si{sub 1-x}C{sub x}/SiC multilayer films were prepared by alternating deposition of Si-rich Si{sub 1-x}C{sub x} and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures (T{sub a}) from 800 to 1100 deg. C. The influence of T{sub a} and Si content in the Si-rich layer on the layered structural stability and on the formation of Si and/or SiC nanocrystals (NCs) is investigated by a variety of analytical techniques, including x-ray reflectivity (XRR), x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectrometry (FTIR). XRR showed that Si{sub 1-x}C{sub x}/SiC multilayers annealed at temperatures of up to 800 deg. C retain their layered structure. XRD revealed that Si NCs were formed in samples with a high Si content in the Si-rich layer for T{sub a}{>=}800 deg. C. At annealing temperatures of 900 deg. C or greater, the formation of Si NCs was accompanied by the formation of {beta}-SiC NCs. Additionally, the formation of Si and SiC NCs was confirmed by TEM imaging and Raman spectroscopy. The Si-NC size obtained from the TEM micrographs is within the range of 3-5 nm. The {beta}-SiC NCs are smaller (2-3 nm) than Si NCs. Raman analysis identified an {approx}9 cm{sup -1} Raman peak shift in the Si-NC peak to a lower energy with respect to that for bulk Si. FTIR Si-C bond absorption spectra exhibited narrowing of the full width at half maximum and a peak shift toward a higher wave number with increasing T{sub a}. This behavior can be explained by an increase in order as well as an increase in the number of Si-C bonds.

  8. The addition of ground wheat straw as a fiber source in the gestation diet of sows and the effect on sow and litter performance for three successive parities.

    PubMed

    Veum, T L; Crenshaw, J D; Crenshaw, T D; Cromwell, G L; Easter, R A; Ewan, R C; Nelssen, J L; Miller, E R; Pettigrew, J E; Ellersieck, M R

    2009-03-01

    A regional experiment was conducted at 8 experiment stations, with a total of 320 sows initially, to evaluate the efficacy of adding 13.35% ground wheat straw to a corn-soybean meal gestation diet for 3 successive gestation-lactation (reproductive) cycles compared with sows fed a control diet without straw. A total of 708 litters were farrowed over 3 reproductive cycles. The basal gestation diet intake averaged 1.95 kg daily for both treatments, plus 0.30 kg of straw daily for sows fed the diet containing ground wheat straw (total intake of 2.25 kg/d). During lactation, all sows on both gestation treatments were fed ad libitum the standard lactation diet used at each station. Response criteria were sow farrowing and rebreeding percentages, culling factors and culling rate, weaning-to-estrus interval, sow BW and backfat measurements at several time points, and litter size and total litter weight at birth and weaning. Averaged over 3 reproductive cycles, sows fed the diet containing wheat straw farrowed and weaned 0.51 more pigs per litter (P addition of 13.35% ground wheat straw to the gestation diet improved sow and litter performance, with increases in litter size and total litter weight at birth and weaning compared with control sows and litters.

  9. Effects of different fibre sources and fat addition on cholesterol and cholesterol-related lipids in blood serum, bile and body tissues of growing pigs.

    PubMed

    Kreuzer, M; Hanneken, H; Wittmann, M; Gerdemann, M M; Machmuller, A

    2002-04-01

    Knowledge is limited on the efficacy of hindgut-fermentable dietary fibre to reduce blood, bile and body tissue cholesterol levels. In three experiments with growing pigs the effects of different kinds and levels of bacterially fermentable fibre (BFS) on cholesterol metabolism were examined. Various diets calculated to have similar contents of metabolizable energy were supplied for complete fattening periods. In the first experiment, a stepwise increase from 12 to 20% BFS was performed by supplementing diets with fermentable fibre from sugar beet pulp (modelling hemicelluloses and pectin). Beet pulp, rye bran (modelling cellulose) and citrus pulp (pectin) were offered either independently or in a mixture in the second experiment. These diets were opposed to rations characterized in carbohydrate type by starch either mostly non-resistant (cassava) or partly resistant (maize) to small intestinal digestion. The third experiment was planned to explore the interactions of BFS from citrus pulp with fat either through additional coconut oil/palm kernel oil blend or full-fat soybeans. In all experiments the increase of the BFS content was associated with a constant (cellulose) or decreasing (hemicelluloses, pectin) dietary proportion of non-digestible fibre. In experiment 1 an inverse dose-response relationship between BFS content and cholesterol in blood serum and adipose tissue as well as bile acid concentration in bile was noted while muscle cholesterol did not respond. In experiment 2 the ingredients characterized by cellulose and hemicelluloses/pectin reduced cholesterol-related traits relative to the low-BFS-high-starch controls whereas, except in adipose tissue cholesterol content, the pectinous ingredient had the opposite effect. However, the changes in serum cholesterol mainly affected HDL and not LDL cholesterol. Adipose tissue cholesterol also was slightly lower with partly resistant starch compared to non-resistant starch in the diet. Experiment 3 showed that

  10. Discovery of a Plains Caldera Complex and Extinct Lava Lake in Arabia Terra, Mars: Implications for the Discovery of Additional Highland Volcanic Source Regions

    NASA Technical Reports Server (NTRS)

    Bleacher, Jacob; Michalski, Joseph

    2012-01-01

    Several irregularly shaped topographic depressions occur near the dichotomy boundary in northern Arabia Terra, Mars. The geomorphology of these features suggests that they formed by collapse, opposed to meteor impact. At least one depression (approx.55 by 85 km) displays geologic features indicating a complex, multi-stage collapse history. Features within and around the collapse structure indicate volcanic processes. The complex occurs within Hesperian ridged plains of likely volcanic origin and displays no crater rim or evidence for ejecta. Instead the depression consists of a series of circumferential graben and down-dropped blocks which also display upper surfaces similar to ridged plain lavas. Large blocks within the depression are tilted towards the crater center, and display graben that appear to have originally been linked with circumferential graben outside of the complex related to earlier collapse events. A nearly 700 m high mound exists along a graben within the complex that might be a vent. The deepest depression displays two sets of nearly continuous terraces, which we interpret as high-stands of a drained lava lake. These features appear similar to the black ledge described during the Kilauea Iki eruption in 1959. A lacustrine origin for the terraces seems unlikely because of the paucity of channels found in or around the depression that could be linked to aqueous surface processes. In addition, there is no obvious evidence for lacustrine sediments within the basin. Together with the presence of significant faulting that is indicative of collapse we conclude that this crater complex represents a large caldera formed in the Late Noachian to Early Hesperian. Other linear and irregular depressions in the region also might be linked to ancient volcanism. If that hypothesis is correct, it suggests that northern Arabia Terra could contain a large, previously unrecognized highland igneous province. Evacuation of magma via explosive and effusive activity

  11. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  12. NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Pagès, Xavier; Vanormelingen, Koen; Smits, Martin; Granneman, Ernst; Fujisawa, Masahiko; Hattori, Nobuyoshi

    2015-04-01

    Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) ∥ Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) ∥ Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) ∥ Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

  13. One-minute deposition of micrometre-thick porous Si-Cu anodes with compositional gradients on Cu current collectors for lithium secondary batteries

    NASA Astrophysics Data System (ADS)

    Lee, Jungho; Hasegawa, Kei; Momma, Toshiyuki; Osaka, Tetsuya; Noda, Suguru

    2015-07-01

    We report micrometre-thick porous Si-Cu anodes that are rapidly co-deposited on Cu current collectors in 1 min. This rapid deposition is realized by heating Si and Cu powders to ∼2000 °C and elevating their vapour pressures, while the porous and amorphous anode structure is realized by keeping the substrates at 100 °C. The films spontaneously form a 2-4.5-μm-thick composition gradient that changes from a Cu-rich region at the bottom to a Si-rich region at the top of the film, because of the higher vapour pressure for Cu than Si. A small addition of 5 wt% Cu to the Si source enhances the cycle performance of the film remarkably in a half-cell test, yielding a gravimetric capacity of 1250 mAh gfilm-1, a volumetric capacity of 1956 mAh cmfilm-3, and an areal capacity of 0.96 mAh cmanode-2 at the 100th cycle. However, excess addition of Cu causes partial Si crystallization in the films, which results in poorer cycle performance. While further improvement is needed, this rapid vapour deposition method yields Si-Cu films with compositional gradients on Cu current collectors in 1 min using inexpensive and safe Si and Cu powder sources, and is attractive for practical Si-based anode fabrication.

  14. Steering S-H and N-H bond activation by a stable n-heterocyclic silylene: different addition of H(2)S, NH(3), and organoamines on a silicon(II) ligand versus its Si(II)-->Ni(CO)(3) complex.

    PubMed

    Meltzer, Antje; Inoue, Shigeyoshi; Präsang, Carsten; Driess, Matthias

    2010-03-10

    The strikingly different behavior of the ylide-like, N-heterocyclic silylene LSi: (5: L = CH[(C horizontal lineCH(2))CMe(NAr)(2)]; Ar = 2,6-(i)PrC(6)H(3)) versus its LSi-->Ni(CO)(3) complex 13 to activate E-H bonds (E = S, N) of small molecules is reported. Remarkably, conversion of 5 with hydrogen sulfide leads exclusively to the first isolable silathioformamide, L'Si( horizontal lineS)H (16: L' = CH[C(Me)NAr](2); Ar = 2,6-(i)PrC(6)H(3)) with a donor-supported Si horizontal lineS double bond and four-coordinate silicon. The latter result demonstrates the unusual ambivalent reactivity of 5 by combining two modes of reactivity involving S-H bond activation and subsequent 1,4- and 1,1-addition, respectively. In addition, 5 can serve as a ligand with well-balanced sigma-donor and pi-acceptor capabilities toward transition metals. This has been demonstrated by the isolable [Ni(0)(arene)] complexes 12a-e (arene = Me(n)C(6)H(6-n), n = 0-3), which are ideal precursors for the formation of the corresponding Ni(CO)(3) complex 13. The latter activates a S-H bond in hydrogen sulfide, too, but the presence of the Ni(CO)(3) moiety governs the formation of the complex 17, bearing an unprecedented beta-diketiminate silicon(II) thiol ligand: L'Si(SH): (L' = CH[C(Me)NAr](2); Ar = 2,6-(i)PrC(6)H(3)). Likewise, the Si(II)-->Ni(CO)(3) coordination in 13 steers exclusively 1,4-addition of ammonia, isopropylamine, and phenylhydrazine onto the silylene ligand 5, leading to the corresponding beta-diketiminate silicon(II) amide or hydrazide complexes L'Si(NHR)-->Ni(CO)(3) (23a-c: R = H, (i)Pr, N(H)Ph). IR measurements reveal that the carbonyl stretching frequencies of the Ni(CO)(3) moiety in 23a-c are shifted to even lower wavenumbers in comparison to those of NHCs or phosphines. In other words, the beta-diketiminate silicon(II) amide ligands in 23a-c represent the strongest donors in the series of N-heterocyclic silylenes reported as yet. PMID:20148586

  15. SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

    NASA Astrophysics Data System (ADS)

    Haiping, Shang; Qiuxia, Xu

    2010-05-01

    By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

  16. Fabrication of crystal α-Si₃N₄/Si-SiOx core-shell/Au-SiOx peapod-like axial double heterostructures for optoelectronic applications.

    PubMed

    Nie, Tianxiao; Chen, Zhi-Gang; Wu, Yueqin; Guo, Yanan; Zhang, Jiuzhan; Fan, Yongliang; Yang, Xinju; Jiang, Zuimin; Zou, Jin

    2012-08-01

    Novel crystal α-Si(3)N(4)/Si-SiO(x) core-shell/Au-SiO(x) peapod-like axial double heterostructural nanowires were obtained by directly annealing a Au covered SiO(2) thin film on a Si substrate. Our extensive electron microscopic investigation revealed that the α-Si(3)N(4) sections with a mathematical left angle bracket 101 mathematical right angle bracket growth direction were grown first, followed by growth of the Si-SiO(x) core-shell sections and finally growth of the Au-SiO(x) peapod-like sections. Through a series of systematically comparative experiments, a temperature-dependent multi-step vapor-liquid-solid growth mechanism is proposed. Room temperature photoluminescence measurement of individual nanowires reveals two emission peaks (410 and 515 nm), indicating their potential applications in light sources, laser or light emitting display devices.

  17. Synthesis of several millimeters long SiC-SiO2 nanowires by a catalyst-free technique

    NASA Astrophysics Data System (ADS)

    Dong, Shun; Li, Minglun; Hu, Ping; Cheng, Yuan; Sun, Boqian

    2016-11-01

    In situ synthesis of ultra-long SiC-SiO2 nanowires were successfully conducted with the raw materials of silicon and phenolic resin by an effective and catalyst-free technique. Several millimeters long SiC-SiO2 nanowires with the diameters in the range of 50-200 nm were mainly composed of Si, C and a small amount of O, and the formation of several millimeters long SiC-SiO2 nanowires was attributed to a low flow rate and carbon sources supplied continuously by the pyrolysis of phenolic resin. A catalyst-free vapor-solid (VS) growth mechanism was proposed to illustrate the growth process of ultra-long SiC-SiO2 nanowires in present experiment, which provides a promising method for in situ fabrication of SiC-SiO2 nanowires as reinforcements into composites.

  18. A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Seoane, N.; Martinez, A.

    2013-09-01

    In this paper we present a 3D quantum transport simulation study of source-to-drain tunnelling in gate-all-around Si nanowire transistors by using the non-equilibrium Green's function approach. The impact of the channel length, device cross-section, and drain and gate applied biases on the source-to-drain tunnelling is examined in detail. The overall effect of tunnelling on the ID-VG characteristics is also investigated. Tunnelling in devices with channel lengths of 10 nm or less substantially enhances the off-current. This enhancement is more important at high drain biases and at larger cross-sections where the sub-threshold slope is substantially degraded. A less common effect is the increase in the on-current due to the tunnelling which contributes as much as 30% of the total on-current. This effect is almost independent of the cross-section, and it depends weakly on the studied channel lengths.

  19. Recycling of Al-Si die casting scraps for solar Si feedstock

    NASA Astrophysics Data System (ADS)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  20. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect

    Li, Xiuyan Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-03

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  1. {sup 13}C chemical shift anisotropies for carbonate ions in cement minerals and the use of {sup 13}C, {sup 27}Al and {sup 29}Si MAS NMR in studies of Portland cement including limestone additions

    SciTech Connect

    Sevelsted, Tine F.; Herfort, Duncan

    2013-10-15

    {sup 13}C isotropic chemical shifts and chemical shift anisotropy parameters have been determined for a number of inorganic carbonates relevant in cement chemistry from slow-speed {sup 13}C MAS or {sup 13}C({sup 1}H) CP/MAS NMR spectra (9.4 T or 14.1 T) for {sup 13}C in natural abundance. The variation in the {sup 13}C chemical shift parameters is relatively small, raising some doubts that different carbonate species in Portland cement-based materials may not be sufficiently resolved in {sup 13}C MAS NMR spectra. However, it is shown that by combining {sup 13}C MAS and {sup 13}C({sup 1}H) CP/MAS NMR carbonate anions in anhydrous and hydrated phases can be distinguished, thereby providing valuable information about the reactivity of limestone in cement blends. This is illustrated for three cement pastes prepared from an ordinary Portland cement, including 0, 16, and 25 wt.% limestone, and following the hydration for up to one year. For these blends {sup 29}Si MAS NMR reveals that the limestone filler accelerates the hydration for alite and also results in a smaller fraction of tetrahedrally coordinated Al incorporated in the C-S-H phase. The latter result is more clearly observed in {sup 27}Al MAS NMR spectra of the cement–limestone blends and suggests that dissolved aluminate species in the cement–limestone blends readily react with carbonate ions from the limestone filler, forming calcium monocarboaluminate hydrate. -- Highlights: •{sup 13}C chemical shift anisotropies for inorganic carbonates from {sup 13}C MAS NMR. •Narrow {sup 13}C NMR chemical shift range (163–171 ppm) for inorganic carbonates. •Anhydrous and hydrated carbonate species by {sup 13}C MAS and {sup 13}C({sup 1}H) CP/MAS NMR. •Limestone accelerates the hydration for alite in Portland – limestone cements. •Limestone reduces the amount of aluminium incorporated in the C-S-H phase.

  2. Development of SiAlON materials

    NASA Technical Reports Server (NTRS)

    Layden, G. K.

    1979-01-01

    Cold pressing and sintering techniques were used to produce ceramic test specimens in which the major phase was either Si3N4 or a solid solution having the beta Si3N4 structure. Additional components were incorporated to promote liquid phase sintering. Glass and/or crystalline phase were consequently retained in boundaries between Si3N4 grains which largely determined the physical properties of the bodies. Systems investigated most extensively included R-Si-Al-O-N (R = rare earth element) Zr-Si-Al-O-N, Y-Si-Be-O-N, and R1-R2-Si-O-N. Room temperature and 1370 C modulus of ruptured, 1370 C creep, and oxidation behavior are discussed in terms of phase relationships in a parent quinery, and relavent oxide systems.

  3. Synthesis of Multisubstituted Olefins through Regio- and Stereoselective Addition of Interelement Compounds Having B-Si, B-B, and Cl-S Bonds to Alkynes, and Subsequent Cross-Couplings.

    PubMed

    Iwasaki, Masayuki; Nishihara, Yasushi

    2016-08-01

    Multisubstituted olefins are fundamental motifs in organic compounds. In this account, we describe the synthesis of organic molecules bearing an olefinic moiety by the transition-metal-catalyzed regio- and stereoselective addition of a variety of interelement compounds to alkynes. Regio- and stereoselective silaboration, diborylation, and chlorothiolation have been achieved by using the transition-metal catalysts. The subsequent cross-coupling reactions of the boron-containing alkenes to install various aryl groups afforded the corresponding tri- and tetraarylated olefins. This account describes our research on the highly regio- and stereoselective synthesis of multifunctionalized olefins such as tetraarylethenes with four different aryl groups.

  4. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    NASA Astrophysics Data System (ADS)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  5. Liquid chromatography coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry and post-column addition of metal salt solutions as a powerful tool for the metabolic profiling of Fusarium oxysporum.

    PubMed

    Cirigliano, Adriana M; Rodriguez, M Alejandra; Gagliano, M Laura; Bertinetti, Brenda V; Godeas, Alicia M; Cabrera, Gabriela M

    2016-03-25

    Fusarium oxysporum L11 is a non-pathogenic soil-borne fungal strain that yielded an extract that showed antifungal activity against phytopathogens. In this study, reversed-phase high-performance liquid chromatography (RP-HPLC) coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry (API-QTOF-MS) was applied for the comprehensive profiling of the metabolites from the extract. The employed sources were electrospray (ESI), atmospheric pressure chemical ionization (APCI) and atmospheric pressure photoionization (APPI). Post-column addition of metal solutions of Ca, Cu and Zn(II) was also tested using ESI. A total of 137 compounds were identified or tentatively identified by matching their accurate mass signals, suggested molecular formulae and MS/MS analysis with previously reported data. Some compounds were isolated and identified by NMR. The extract was rich in cyclic peptides like cyclosporins, diketopiperazines and sansalvamides, most of which were new, and are reported here for the first time. The use of post-column addition of metals resulted in a useful strategy for the discrimination of compound classes since specific adducts were observed for the different compound families. This technique also allowed the screening for compounds with metal binding properties. Thus, the applied methodology is a useful choice for the metabolic profiling of extracts and also for the selection of metabolites with potential biological activities related to interactions with metal ions.

  6. Liquid chromatography coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry and post-column addition of metal salt solutions as a powerful tool for the metabolic profiling of Fusarium oxysporum.

    PubMed

    Cirigliano, Adriana M; Rodriguez, M Alejandra; Gagliano, M Laura; Bertinetti, Brenda V; Godeas, Alicia M; Cabrera, Gabriela M

    2016-03-25

    Fusarium oxysporum L11 is a non-pathogenic soil-borne fungal strain that yielded an extract that showed antifungal activity against phytopathogens. In this study, reversed-phase high-performance liquid chromatography (RP-HPLC) coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry (API-QTOF-MS) was applied for the comprehensive profiling of the metabolites from the extract. The employed sources were electrospray (ESI), atmospheric pressure chemical ionization (APCI) and atmospheric pressure photoionization (APPI). Post-column addition of metal solutions of Ca, Cu and Zn(II) was also tested using ESI. A total of 137 compounds were identified or tentatively identified by matching their accurate mass signals, suggested molecular formulae and MS/MS analysis with previously reported data. Some compounds were isolated and identified by NMR. The extract was rich in cyclic peptides like cyclosporins, diketopiperazines and sansalvamides, most of which were new, and are reported here for the first time. The use of post-column addition of metals resulted in a useful strategy for the discrimination of compound classes since specific adducts were observed for the different compound families. This technique also allowed the screening for compounds with metal binding properties. Thus, the applied methodology is a useful choice for the metabolic profiling of extracts and also for the selection of metabolites with potential biological activities related to interactions with metal ions. PMID:26655791

  7. Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?

    NASA Astrophysics Data System (ADS)

    Anders, M. A.; Lenahan, P. M.; Lelis, A. J.

    2016-10-01

    Silicon carbide (SiC) based metal-oxide-semiconductor field-effect transistors (MOSFETs) have great promise in high power and high temperature applications. Unfortunately, effective channel mobilities remain disappointingly low, typically about 30 cm2/Vs. A major contributor to the disappointing effective channel mobilities is the presence of substantial densities of interface traps at the SiC/SiO2 interface. Many investigators have invoked silicon or carbon dangling bonds to be the dominating source of these interface defects, but very little, if any, direct experimental evidence exists to support this assumption in the SiC/SiO2 system. Cantin et al. [Phys. Rev. Lett. 92, 1 (2004)] have used conventional electron paramagnetic resonance measurements on porous oxidized SiC structures to measure the g tensor for the SiC/SiO2 interface carbon dangling bond. These results provide a particularly straightforward means to search for the presence of carbon dangling bonds in fully processed SiC MOSFETs using electrically detected magnetic resonance. Additionally, simple theory provides guidance to search for silicon dangling bond defects. In this study, we utilize K band electrically detected magnetic resonance via spin dependent charge pumping measurements in which almost all of the SiC band gap at the SiC/SiO2 interface is accessed. Although quite high signal to noise measurements are achieved, we are unable to detect any trace of the carbon dangling bond spectra. However, in very poor quality p-channel devices, we observe a spectrum which could be consistent with silicon dangling bonds. Other defect centers are clearly present and we conclude that these other centers dominate the interface trap density of states.

  8. Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

    2010-01-01

    Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

  9. Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

    SciTech Connect

    Melnikov, M. Yu. Shashkin, A. A.; Dolgopolov, V. T.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.

    2015-03-02

    We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m{sup 2}/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al{sub 2}O{sub 3}, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

  10. Reactive sintering of SiC

    NASA Technical Reports Server (NTRS)

    Kim, Y. W.; Lee, J. G.

    1984-01-01

    Investigation of the sintering processes involved in the sintering of SiC revealed a connection between the types and quantities of sintering additives or catalysts and densification, initial shrinkage, and weight loss of the sintered SiC material. By sintering processes, is meant the methods of mass transport, namely solid vapor transport and grain boundary diffusion.

  11. Microstructure design and control for improvement of thermal conductivity of SiCf/SiC composites

    NASA Astrophysics Data System (ADS)

    Yoshida, Katsumi; Kajikawa, Satoshi; Yano, Toyohiko

    2013-09-01

    We focused on microstructure design and control of SiCf/SiC composite based on our fabrication process and the simple model of thermal conductivity of the SiCf/SiC composite, and the improvement of their thermal conductivity was investigated. Submicron-sized α-SiC with coarse α-SiC particles addition was used as the starting materials for SiC matrix layers between SiC fiber cloths because it showed higher thermal conductivity. The thermal conductivity of PCS-composite, EPD-composite and Untreated-composite was 18, 45 and 56 W/m K, respectively, and these values were much higher than that of the composites reported in our previous papers. Untreated composite is simply considered as a multilayered composite consisting of the SiC fiber layers with high thermal conductivity and the SiC matrix layers with high thermal conductivity. The experimental thermal conductivity of the Untreated composite well agreed with the theoretical thermal conductivity calculated by series model. Thermal conductivity of EPD-composite was lower than that of Untreated composite. In EPD-composite, the thermal conductivity of SiC fiber layers with the SiC matrix should be lower than that of SiC fibers themselves due to the SiC matrix with slightly lower thermal conductivity in SiC fiber cloths. The SiC matrix formed in SiC fiber cloths in PCS-composite was derived from PCS, and this matrix would show much lower thermal conductivity due to its low crystallinity. PCS-composite is considered as a multilayered composite consisting of the SiC fiber layers with very low thermal conductivity and the SiC matrix layers with high thermal conductivity, and thus the PCS-composite has low thermal conductivity. In this study, higher thermal conductivity of SiCf/SiC composite was successfully achieved by EPD process and using microstructure-controlled SiC matrix and polycrystalline SiC fibers.

  12. High temperature compounds for turbine vanes. [of SiC, Si3N4, and Si composites

    NASA Technical Reports Server (NTRS)

    Rhodes, W. H.; Cannon, R. M., Jr.

    1974-01-01

    Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

  13. The Basic SI Model

    ERIC Educational Resources Information Center

    Hurley, Maureen; Jacobs, Glen; Gilbert, Melinda

    2006-01-01

    A general overview of the SI model is provided, including the SI philosophy, essential components of the program, program structures, key roles, outcomes, and evaluation. A review of what we have learned about the importance of planning SI sessions, providing ongoing training for leaders, conducting regular SI program assessments, and implementing…

  14. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  15. A soft x-ray photoemission study of the chemisorption and reaction of diethylsilane on Si(100)

    SciTech Connect

    Lapiano-Smith, D.A.; Himpsel, F.J.; Terminello, L.J.

    1993-06-01

    Soft x-ray synchrotron radiation was utilized as the excitation source in a high-resolution photoemission experiment on chemisorption and subsequent reaction of diethylsilane on the Si(100) surface. We have found that diethylsilane chemisorbs dissociatively to form Si-CH{sub 2}CH{sub 3} surface species on Si(100) following a room temperature exposure. These species are identified by two very sharp peaks observed in the valence band spectra positioned at 17.9 and 14.3 eV binding energy. In addition, C 1s core level spectra, measured following exposures of Si(100) substrates as a function of surface temperature, show that carbon, in some form, exists on the Si surface following exposures at every temperature from room temperature to about 600C. While only {minus}CH{sub 2}CH{sub 3}, ethyl groups are observed on the surface at room temperature, these species appear to partially dehydrogenate at 300C, producing a mixture of {minus}CH{sub 2}CH{sub 3} groups and other intermediate carbonaceous species. At a growth temperature of about 400C the intermixing of elemental carbon with Si begins. At higher temperatures, we observe the continued degradation of diethylsilane to produce a Si + C alloy on the surface at 600C. Results indicate that diethylsilane has potential as a molecular precursor for SiC formation by chemical vapor deposition techniques.

  16. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

    NASA Astrophysics Data System (ADS)

    Wirths, S.; Troitsch, R.; Mussler, G.; Hartmann, J.-M.; Zaumseil, P.; Schroeder, T.; Mantl, S.; Buca, D.

    2015-05-01

    The formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap group IV semiconductors. (Si)GeSn layers were pseudomorphically grown on Ge buffered Si(001) by reduced pressure chemical vapor deposition. Ni, i.e. the metal of choice for source/drain metallization in Si nanoelectronics, is employed for the stano-(silicon)-germanidation of highly strained (Si)GeSn alloys. We show that NiGeSn on GeSn layers change phase from well-oriented Ni5(GeSn)3 to poly-crystalline Ni1(GeSn)1 at very low annealing temperatures. A large range of GeSn compositions with Sn concentrations up to 12 at.%, and SiGeSn ternaries with large Si and Sn compositions from 18%/3% to 4%/11% are investigated. In addition, the sheet resistance, of importance for electronic or optoelectronic device contacts, is quantified. The incorporation of Si extends the thermal stability of the resulting low resistive quaternary phase compared to their NiGeSn counterparts.

  17. In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces

    NASA Astrophysics Data System (ADS)

    Carter, R. J.; Schneider, T. P.; Montgomery, J. S.; Nemanich, R. J.

    1994-11-01

    A RF H-plasma exposure was used to clean the surface of Si-SiO2 patterned wafers. The areal coverage of SiO2 to bare Si was 4 to 1, and the patterns were long strips, small squares, and large open regions. The plasma-surface etching was monitored by residual gas analysis (RGA). The RGA spectra indicated etching of the Si surface at temperatures below 400 C and no detectable by-products due to interactions with the SiO2 regions for temperatures less than 450 C. The patterned surfaces were characterized with low energy electron diffraction (LEED) (from the bare Si regions) and atomic force microscopy (AFM). The LEED patterns indicate 1 x 1 and 2 x 1 surface symmetries at 300 and 450 C, respectively. The sharpness of the LEED patterns as well as the 2 x 1 reconstruction indicated that the H-plasma cleaned the bare Si regions. In addition, AFM measurements indicated that the Si and SiO2 surface rms roughnesses do not vary significantly due to the H-plasma exposure. It can be concluded from the RGA and AFM data that the remote H-plasma process at 450 C cleaned the surface and did not significantly react with either the Si or SiO2 regions.

  18. Effect of protein source and protease addition on performance, blood metabolites and nutrient digestibility of turkeys fed on low-protein diets from 28 to 55 d post hatch.

    PubMed

    Shahir, M H; Rahimi, R; Taheri, H R; Heidariniya, A; Baradaran, N; Asadi Kermani, Z

    2016-06-01

    The objective of this study was to investigate the effect of a monocomponent protease and dietary inclusion of canola meal (CM) and poultry by-product meal (PBM) on growth performance, carcass characteristics and blood metabolites of turkeys fed on low crude protein (CP) diets from 28 to 55 d post hatch. Experimental treatments included control, maize-soybean meal diet including 258.3 g/kg CP; negative control 1 (NC1), maize-soybean meal diet with reduced CP (232.4 g/kg); NC2, control diet (CP, 258.3 g/kg) including CM (80 g/kg) and PBM (80 g/kg); NC3, maize-soybean meal diet with reduced CP (232.4 g/kg) including CM (80 g/kg) and PBM (80 g/kg). Also, the NC1 + P and NC3 + P diets were created by addition of protease enzyme (30 000 units/kg of diet) to the NC1 and NC3 diets, respectively. The NC3 group had lower body weight gain (BWG) compared to those fed on the control diet, and no improvement with enzyme addition (NC3 + P) was achieved. The protease addition to the NC1 diet (NC1 + P) improved BWG to the level of the control diet. The NC1 group had higher feed conversion ratio (FCR) compared to the control and NC3 + P, but protease addition to the NC1 diet improved FCR. Protease addition to the low CP diets resulted in higher nitrogen (N) retention than in the control and NC2 groups. Also, the NC1 + P and NC3 + P diets increased apparent ileal digestibility (AID) of CP compared to the control group. It was concluded that addition of CM (up to 80 g/kg) and PBM (up to 80 g/kg) to turkey diets had no negative effect on growth performance from 28 to 55 d of age. The NC1 + P group achieved the BWG of the control group which was partially due to increases in N retention and AID of CP, but the NC3 + P group failed to recover the growth losses. This difference implies that the efficacy of the protease may depend upon the protein source in the ration. PMID:27074290

  19. SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION

    SciTech Connect

    Paul K.T. Liu

    2001-10-16

    This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction.

  20. Direct observation of nanometer-scale strain field around CoSi{sub 2}/Si interface using scanning moiré fringe imaging

    SciTech Connect

    Kim, Suhyun; Jung, Younheum; Jung Kim, Joong; Byun, Gwangseon; Lee, Sunyoung; Lee, Heabum

    2014-04-21

    We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi{sub 2} contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi{sub 2}/Si (111) interface was determined from the high-resolution (HR)-STEM images, and the strain field formed around the S/D region was revealed by nanometer-scale SMFs appearing in the STEM image. In addition, we showed that the strain field in the S/D region measured by SMF imaging agreed with results obtained via peak-pairs analysis of HR-STEM images.

  1. Effect of the addition of B 2O 3 and BaO-B 2O 3-SiO 2 glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu 3Ti 4O 12

    NASA Astrophysics Data System (ADS)

    Shri Prakash, B.; Varma, K. B. R.

    2007-06-01

    The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu 3Ti 4O 12 (CCTO) ceramics was investigated. Both single-component (B 2O 3) and multi-component (30 wt% BaO-60 wt% B 2O 3-10 wt% SiO 2 (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B 2O 3 glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B 2O 3 content resulted in its segregation at the grain boundaries associated with a reduction in the grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples.

  2. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  3. Si/IrSi3 Schottky-Barrier Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

  4. Mo-Si alloy development

    SciTech Connect

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  5. Single-crystal, Si nanotubes, and their mechanical resonant properties.

    PubMed

    Quitoriano, Nathaniel J; Belov, Miro; Evoy, Stephane; Kamins, Theodore I

    2009-04-01

    Single-crystalline Si nanotubes (NTs) were fabricated using vapor-liquid-solid grown, Ge nanowires (NWs) as a template upon which a Si shell was deposited to first grow Ge-core, Si-shell NWs. The tips of these NWs were removed, enabling exposure of the Ge core to H(2)SO(4) and H(2)O(2). After removing the Ge core, single-crystalline Si NTs remained. In addition to growing these Ge-core, Si-shell NWs from a Si (111) substrate, these NWs were also grown horizontally from a vertical Si surface to enable the fabrication of horizontal NTs after focused ion-beam cutting and etching steps. The resonant properties of the Ge-core, Si-shell NW, and the Si NT after the cutting and etching steps were measured and found to have a quality factor, Q, of approximately 1800. PMID:19271766

  6. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

    PubMed Central

    2013-01-01

    This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range. PMID:23924368

  7. Nanoscale SiC production by ballistic ion beam mixing of C/Si multilayer structures

    NASA Astrophysics Data System (ADS)

    Battistig, G.; Zolnai, Z.; Németh, A.; Panjan, P.; Menyhárd, M.

    2016-05-01

    The ion beam-induced mixing process using Ar+, Ga+, and Xe+ ion irradiation has been used to form SiC rich layers on the nanometer scale at the interfaces of C/Si/C/Si/C multilayer structures. The SiC depth distributions were determined by Auger electron spectroscopy (AES) depth profiling and were compared to the results of analytical models developed for ballistic ion mixing and local thermal spike induced mixing. In addition, the measured SiC depth distributions were correlated to the Si and C mixing profiles simulated by the TRIDYN code which can follow the ballistic ion mixing process as a function of ion fluence. Good agreement has been found between the distributions provided by AES depth profiling and TRIDYN on the assumption that the majority of the Si (C) atoms transported to the neighboring C (Si) layer form the SiC compound. The ion beam mixing process can be successfully described by ballistic atomic transport processes. The results show that SiC production as a function of depth can be predicted, and tailored compound formation on the nanoscale becomes feasible, thus leading to controlled synthesis of protective SiC coatings at room temperature.

  8. Strong enhancement of high-field critical current properties and irreversibility field of MgB2 superconducting wires by coronene active carbon source addition via the new B powder carbon-coating method

    NASA Astrophysics Data System (ADS)

    Ye, Shu Jun; Matsumoto, Akiyoshi; Chao Zhang, Yun; Kumakura, Hiroaki

    2014-08-01

    We report an effective carbon-containing additive, coronene (C24H12), for MgB2 superconducting wires. We used B powder coated with C24H12 to fabricate MgB2 wires using the powder-in-tube (PIT) and internal Mg diffusion (IMD) processes. The in-field critical current properties are strongly enhanced for both PIT- and IMD-processed MgB2 wires. For PIT MgB2 wires, a critical current density (Jc) value of 1.8 × 104 A cm-2 is obtained at 4.2 K and 10 T. For IMD MgB2 wires, we obtained a Jc of 1.07 × 105 A cm-2 and an engineering Jc (Je) of 1.12 × 104 A cm-2 at 4.2 K and 10 T. These Jc and Je values are similar to the highest values reported for MgB2 wires thus far. Furthermore, the irreversibility field, Birr, determined with a current density criterion of 100 A cm-2, is strongly enhanced to 25 T at 4.2 K, which is also the highest value reported for MgB2 superconducting wires thus far. Coronene is an active carbon source for MgB2 superconducting wires because (1) coronene has a high carbon content (96 wt%) with a small amount of hydrogen (impurity), (2) the decomposition temperature for coronene is near the reaction temperature between Mg and B, and (3) uniform dispersion of coronene on the B surface can be obtained due to the melting point of coronene being lower than the decomposition temperature. Carbon substitution for B caused by the coronene active carbon source is mainly responsible for the high field critical current properties and the high Birr obtained in this work.

  9. Improving Thermomechanical Properties of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Bhatt, Ramakrishna T.

    2006-01-01

    Today, a major thrust toward improving the thermomechanical properties of engine components lies in the development of fiber-reinforced silicon carbide matrix composite materials, including SiC-fiber/SiC-matrix composites. These materials are lighter in weight and capable of withstanding higher temperatures, relative to state-of-the-art metallic alloys and oxide-matrix composites for which maximum use temperatures are in the vicinity of 1,100 C. In addition, the toughness or damage tolerance of the SiC-matrix composites is significantly greater than that of unreinforced silicon-based monolithic ceramics. For successful application in advanced engine systems, the SiC-matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetimes. Inasmuch as the high-temperature structural lives of ceramic materials are typically limited by creep-induced growth of flaws, a key property required of such composite materials is high resistance to creep under conditions of use. Also, the thermal conductivity of the materials should be as high as possible so as to minimize component thermal gradients and thermal stresses. A state-of-the-art SiC-matrix composite is typically fabricated in a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by thermally stable high-performance fibers, (2) chemical-vapor infiltration (CVI) of a fiber-coating material such as boron nitride (BN) into the preform, and (3) infiltration of an SiC-based matrix into the remaining porosity in the preform. Generally, the matrices of the highest-performing composites are fabricated by initial use of a CVI SiC matrix component that is typically more thermally stable and denser than matrix components formed by processes other than CVI. As such, the initial SiC matrix component made by CVI provides better environmental protection to the coated fibers embedded within it. Also, the denser CVI SiC imparts to the

  10. Metal Additive Manufacturing: A Review of Mechanical Properties

    NASA Astrophysics Data System (ADS)

    Lewandowski, John J.; Seifi, Mohsen

    2016-07-01

    This article reviews published data on the mechanical properties of additively manufactured metallic materials. The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, EBF3). Although only a limited number of metallic alloy systems are currently available for additive manufacturing (e.g., Ti-6Al-4V, TiAl, stainless steel, Inconel 625/718, and Al-Si-10Mg), the bulk of the published mechanical properties information has been generated on Ti-6Al-4V. However, summary tables for published mechanical properties and/or key figures are included for each of the alloys listed above, grouped by the additive technique used to generate the data. Published values for mechanical properties obtained from hardness, tension/compression, fracture toughness, fatigue crack growth, and high cycle fatigue are included for as-built, heat-treated, and/or HIP conditions, when available. The effects of test orientation/build direction on properties, when available, are also provided, along with discussion of the potential source(s) (e.g., texture, microstructure changes, defects) of anisotropy in properties. Recommendations for additional work are also provided.

  11. Advanced Si IR detectors using molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Jones, E. W.; George, T.; Ksendzov, A.; Huberman, M. L.

    1991-01-01

    SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

  12. Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces

    SciTech Connect

    Yamada, S.; Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M.; Hamaya, K.

    2014-08-18

    We study high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x} Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1−x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  13. Improvement of magnetic and structural stabilities in high-quality Co2FeSi1-xAlx/Si heterointerfaces

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M.; Hamaya, K.

    2014-08-01

    We study high-quality Co2FeSi1-xAlx Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co2FeSi1-xAlx/Si heterointerfaces are improved with increasing x in Co2FeSi1-xAlx. Compared with L21-ordered Co2FeSi/Si, B2-ordered Co2FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  14. Tunable, broadband and high-efficiency Si/Ge hot luminescence with plasmonic nanocavity array

    NASA Astrophysics Data System (ADS)

    Qi, Gongmin; Zhang, Miao; Wang, Lin; Mu, Zhiqiang; Ren, Wei; Li, Wei; Di, Zengfeng; Wang, Xi

    2016-06-01

    In addition to the massive application in the electronics industry for decades, silicon has been considered as one of the best candidates for the photonics industry. However, a high-efficiency, broadband light source is still a challenge. In this paper, we theoretically propose a Si/Ge based platform consisting of plasmonic nanocavity array to realize the tunable, broadband, and high-efficiency Si/Ge hot luminescence from infrared to visible region with large luminescence enhancement (about 103). It is demonstrated that the large luminescence enhancement is due to the resonance between the intrinsic hot luminescence and the plasmonic nanocavity modes with ultra-small effective mode volumes. And, the size and Ge composition of Si 1 - x Ge x nanowire can be tuned to realize the tunable and broadband luminescence. This study gives rise to many applications in silicon photonics, like ultrafast optical communications, sensors, and on-chip spectral measurements.

  15. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  16. The Stellar Imager (SI) Project: A Deep Space UV/Optical Interferometer (UVOI) to Observe the Universe at 0.1 Milli-Arcsec Angular Resolution

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2008-01-01

    The Stellar Imager (SI) is a space-based, UV/ Optical Interferometer (UVOI) designed to enable 0.1 milliarcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding, of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this missin. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  17. Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2.

  18. Photoluminescence of etched SiC nanowires

    NASA Astrophysics Data System (ADS)

    Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

    2010-10-01

    SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

  19. In Situ Study of the Formation of Silicide Phases in Amorphous Co–Si Mixed Layers

    SciTech Connect

    Van Bockstael, C.; De Keyser, K; Demeulemeester, J; Vantomme, A; Van Meirhaeghe, R; Detavernier, C; Jordan-Sweet, J; Lavoie, C

    2010-01-01

    We investigate Co silicide phase formation when extra Si is added within an as deposited 50 nm Co film. The addition of Si is investigated for both the Co/SiO{sub 2} and Co/Si(1 0 0) system. A series of 10 Co-Si mixed films with a Si content varying from 21 to 59 at.% was prepared and investigated during annealing with in situ X-ray diffraction. The oxide system is used as reference system to identify phases that initially crystallize in an amorphous mixture of a given composition. Multiple phases can nucleate, and the temperature of crystallization depends on the Co-Si atomic ratio. Upon heating of the Co(Si)/Si system, the first reaction is a similar crystallization reaction of the Co(Si) mixture. Once the first phase is formed, one has the normal system of a silicide phase in contact with an unlimited amount of Si from the substrate, and the sequential phase formation towards CoSi{sub 2} is established. For deposited layers of composition ranging from 48%Si to 52%Si, the CoSi is the first phase to form and increasing the amount of Si leads to a remarkable improvement of the thermal stability of CoSi on Si(1 0 0). CoSi{sub 2} nucleation was extensively delayed by 150 C compared to the reaction observed from a pure Co film on Si(1 0 0). Electron backscatter diffraction measurements reveal that in this range, the gradual Si increase systematically leads to bigger CoSi grains (up to 20 {micro}m). This shows that the grain size of the CoSi precursor strongly affects the nucleation of the following CoSi{sub 2} phase. Laser-light scattering measurements suggest that adding more than 42%Si reduces the roughness of the CoSi{sub 2} layer.

  20. Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry

    NASA Astrophysics Data System (ADS)

    Batista, Jerias; Mandelis, Andreas; Shaughnessy, Derrick; Li, Bincheng

    2004-09-01

    A photocarrier radiometry technique using a secondary subband-gap dc light source is introduced, along with the applications to deep subsurface electronic defect analysis in Si wafers. It is shown that the use of a dc light source, in addition to the modulated laser beam, drastically enhances the potential of the technique in resolving low-level damage otherwise virtually indistinguishable by conventional photothermal techniques. Using this methodology, the overall contrast enhancement was about 386% for amplitude and 5586% in phase over conventional photocarrier radiometry.

  1. Surface modification of SiC mirror by IARE method

    NASA Astrophysics Data System (ADS)

    Shen, Zhenfeng; Gao, Jinsong

    2011-02-01

    A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects .This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300°C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense, homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm, the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective.

  2. Surface modification of SiC mirror by IARE method

    NASA Astrophysics Data System (ADS)

    Shen, Zhenfeng; Gao, Jinsong

    2010-10-01

    A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects .This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300°C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense, homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm, the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective.

  3. Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

    NASA Astrophysics Data System (ADS)

    Liang, J.; Nishida, S.; Arai, M.; Shigekawa, N.

    2016-07-01

    The effects of annealing process on the electrical properties of n+-Si/n-SiC and p+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring the current-voltage (I-V) characteristics of n+-Si/n-SiC junctions that the reverse-bias current and the ideality factor decreased to 2.0 × 10-5 mA/cm2 and 1.10, respectively, after the junctions annealing at 700 °C. The flat band voltages of n+-Si/n-SiC and p+-Si/n-SiC junctions obtained from capacitance-voltage (C-V) measurements decreased with increasing annealing temperature. Furthermore, their flat band voltages are very close to each other irrespective of the annealing temperature change, which suggests that the Fermi level is still pinned at the bonding interface even for the junctions annealing at high temperature and the interface state density causing Fermi level pinning varies with the junctions annealing. The reverse characteristics of n+-Si/n-SiC junctions are in good agreement with the calculations based on thermionic field emission. In addition, the calculated donor concentration of 4H-SiC epi-layers and flat band voltage is consistent with the values obtained from C-V measurements.

  4. Fabrication and photoactivity of a tunable-void SiO₂-TiO₂ core-shell structure on modified SiO₂ nanospheres by grafting an amphiphilic diblock copolymer using ARGET ATRP.

    PubMed

    Zhao, Minnan; Zhou, Guowei; Zhang, Lei; Li, Xiuyan; Li, Tianduo; Liu, Fangfang

    2014-02-28

    SiO₂-based composites have important applications in various technological fields. In this work, a tunablevoid SiO₂-TiO₂ core-shell structure was successfully prepared for the first time using SiO₂-polymethyl methacrylate (PMMA)-polyoligo(ethylene glycol)methyl ether methacrylate (PO(EO)nMA) (n = 2, 5, and 8). An amphiphilic copolymer was used as the template, and calcination was performed using tetrabutyl titanate (TBT) as the titanium source. SiO₂-PMMA-b-PO(EO)nMA microspheres were first synthesized through activators regenerated by electron transfer-atom transfer radical polymerization. Methyl methacrylate and O(EO)nMA were grafted with different EO unit numbers onto the surface of the halogen functional group of SiO₂. TBT was hydrolyzed along with the PO(EO)nMA chain through hydrogen bonding, and then the SiO₂-TiO₂ core-shell structure was acquired through calcination to remove the polymer. Simultaneously, amorphous TiO₂ crystallized during calcination. A series of characterizations indicated that the amphiphilic block copolymer was grafted onto SiO₂ mesoparticle surfaces, the titania samples existed only in the anatase phase, and the prepared SiO₂-TiO₂ had hierarchically nanoporous structures. The gradient hydrophilicity of the PMMA-b-PO(EO)nMA copolymer template facilitated the hydrolysis of TBT molecules along the PO(EO)nMA to PMMA segments, thereby tuning the space between the core and the shell. In addition, the space was about 6 nm when the EO number was 2, and the space was about 10 nm when the EO numbers were 5 and 8. The photocatalytic activities of the SiO₂-TiO₂ materials were tested on the photodegradation of methyl orange. PMID:24795964

  5. Molten Salt Electrodeposition of Silicon in Cu-Si

    NASA Astrophysics Data System (ADS)

    Sokhanvaran, Samira

    Widespread use of solar energy has not been realized to date because its cost is not competitive with conventional energy sources. The high price of solar grade silicon has been one of the barriers against photovoltaic industry achieving its much anticipated growth. Therefore, developing a method, which is energy efficient and will deliver inexpensive silicon feedstock material is essential. The electrodeposition of Si from a cryolite-based melt was investigated in the present work as a possible solution. This study proposed electrowinning of Si in molten Cu-Si alloy, to decrease the working temperature and increase the efficiency. Solvent refining can be used to recover Si from Cu-Si and also as a second purification method. The physicochemical properties of the potential electrolyte, cryolite-SiO 2 melts, were studied in the first step of this work. The deposition potential of Si on a graphite cathode was measured to determine the working potential and the effect of SiO2 concentration on it. In the next step, the deposition potential of Si from cryolite--SiO2 melt on Cu and Cu-Si cathodes was determined using cyclic voltammetry. Next, the cathodic and the anodic current inefficiencies of the process were measured. Continuous analysis of the evolved gas enabled the instantaneous measurement of the current efficiency and the kinetics of the deposition. Finally, the effectiveness of the process in delivering high purity Si was investigated. Si dendrites were precipitated out of the Cu-Si cathode and recovered to determine the purity of the final product as the final step of this study. The produced Si was separated from the alloy matrix by crushing and acid leaching and the purity was reported. The findings of this research show that the proposed method has the potential to produce high purity silicon with low B content. Further development is required to remove some metallic impurities that are remained in Si.

  6. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    PubMed

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  7. Si=Si Double Bonds: Synthesis of an NHC-Stabilized Disilavinylidene.

    PubMed

    Ghana, Priyabrata; Arz, Marius I; Das, Ujjal; Schnakenburg, Gregor; Filippou, Alexander C

    2015-08-17

    An efficient two-step synthesis of the first NHC-stabilized disilavinylidene (Z)-(SIdipp)Si=Si(Br)Tbb (2; SIdipp=C[N(C6H3-2,6-iPr2)CH2]2, Tbb=C6H2-2,6-[CH(SiMe3)2]2-4-tBu, NHC=N-heterocyclic carbene) is reported. The first step of the procedure involved a 2:1 reaction of SiBr2(SIdipp) with the 1,2-dibromodisilene (E)-Tbb(Br)Si=Si(Br)Tbb at 100 °C, which afforded selectively an unprecedented NHC-stabilized bromo(silyl)silylene, namely SiBr(SiBr2Tbb)(SIdipp) (1). Alternatively, compound 1 could be obtained from the 2:1 reaction of SiBr2(SIdipp) with LiTbb at low temperature. 1 was then selectively reduced with C8K to give the NHC-stabilized disilavinylidene 2. Both low-valent silicon compounds were comprehensively characterized by X-ray diffraction analysis, multinuclear NMR spectroscopy, and elemental analyses. Additionally, the electronic structure of 2 was studied by various quantum-chemical methods. PMID:26136260

  8. siRNA Delivery to the Glomerular Mesangium Using Polycationic Cyclodextrin Nanoparticles Containing siRNA

    PubMed Central

    Gale, Aaron; Wu, Peiwen; Ma, Rong; Davis, Mark E.

    2015-01-01

    There is an urgent need for new therapies that can halt or reverse the course of chronic kidney disease with minimal side-effect burden on the patient. Small interfering RNA (siRNA) nanoparticles are new therapeutic entities in clinical development that could be useful for chronic kidney disease treatment because they combine the tissue-specific targeting properties of nanoparticles with the gene-specific silencing effects of siRNA. Recent reports have emerged demonstrating that the kidney, specifically the glomerulus, is a readily accessible site for nanoparticle targeting. Here, we explore the hypothesis that intravenously administered polycationic cyclodextrin nanoparticles containing siRNA (siRNA/CDP-NPs) can be used for delivery of siRNA to the glomerular mesangium. We demonstrate that siRNA/CDP-NPs localize to the glomerular mesangium with limited deposition in other areas of the kidney after intravenous injection. Additionally, we report that both mouse and human mesangial cells rapidly internalize siRNA/CDP-NPs in vitro and that nanoparticle uptake can be enhanced by attaching the targeting ligands mannose or transferrin to the nanoparticle surface. Lastly, we show knockdown of mesangial enhanced green fluorescent protein expression in a reporter mouse strain following iv treatment with siRNA/CDP-NPs. Altogether, these data demonstrate the feasibility of mesangial targeting using intravenously administered siRNA/CDP-NPs. PMID:25734248

  9. Fe-Si networks in Na2FeSiO4 cathode materials.

    PubMed

    Wu, P; Wu, S Q; Lv, X; Zhao, X; Ye, Z; Lin, Z; Wang, C Z; Ho, K M

    2016-08-24

    Using a combination of adaptive genetic algorithm search, motif-network search scheme and first-principles calculations, we have systematically studied the low-energy crystal structures of Na2FeSiO4. We show that the low-energy crystal structures with different space group symmetries can be classified into several families based on the topologies of their Fe-Si networks. In addition to the diamond-like network which is shared by most of the low-energy structures, another three robust Fe-Si networks are also found to be stable during the charge/discharge process. The electrochemical properties of representative structures from these four different Fe-Si networks in Na2FeSiO4 and Li2FeSiO4 are investigated and found to be strongly correlated with the Fe-Si network topologies. Our studies provide a new route to characterize the crystal structures of Na2FeSiO4 and Li2FeSiO4 and offer useful guidance for the design of promising cathodes for Na/Li ion batteries. PMID:27523264

  10. Si Isotopes of Brownleeite

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  11. Tracing mechanisms controlling the release of dissolved silicon in forest soil solutions using Si isotopes and Ge/Si ratios

    NASA Astrophysics Data System (ADS)

    Cornelis, J.-T.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

    2010-07-01

    The terrestrial biogenic Si (BSi) pool in the soil-plant system is ubiquitous and substantial, likely impacting the land-ocean transfer of dissolved Si (DSi). Here, we consider the mechanisms controlling DSi in forest soil in a temperate granitic ecosystem that would differ from previous works mostly focused on tropical environments. This study aims at tracing the source of DSi in forest floor leachates and in soil solutions under various tree species at homogeneous soil and climate conditions, using stable Si isotopes and Ge/Si ratios. Relative to granitic bedrock, clays minerals were enriched in 28Si and had high Ge/Si ratios, while BSi from phytoliths was also enriched in 28Si, but had a low Ge/Si ratio. Such a contrast is useful to infer the relative contribution of silicate weathering and BSi dissolution in the shallow soil on the release of DSi in forest floor leachate solutions. The δ 30Si values in forest floor leachates (-1.38‰ to -2.05‰) are the lightest ever found in natural waters, and Ge/Si ratios are higher in forest floor leachates relative to soil solution. These results suggest dissolution of 28Si and Ge-enriched secondary clay minerals incorporated by bioturbation in organic-rich horizons in combination with an isotopic fractionation releasing preferentially light Si isotopes during this dissolution process. Ge/Si ratios in soil solutions are governed by incongruent weathering of primary minerals and neoformation of secondary clays minerals. Tree species influence Si-isotopic compositions and Ge/Si ratios in forest floor leachates through differing incorporation of minerals in organic horizons by bioturbation and, to a lesser extent, through differing Si recycling.

  12. Recent Results From a Si/CdTe Semiconductor Compton Telescope

    SciTech Connect

    Tanaka, T.; Watanabe, S.; Takeda, S.; Oonuki, K.; Mitani, T.; Nakazawa, K.; Takashima, T.; Takahashi, T.; Tajima, H.; Sawamoto, N.; Fukazawa, Y.; Nomachi, M.; /JAXA, Sagamihara /Tokyo U. /SLAC /Hiroshima U. /Osaka U.

    2007-01-23

    We are developing a Compton telescope based on high resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma-rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9{sup o} (FWHM) at 511 keV, and the energy resolution is 14 keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating {sup 137}Cs source, we successfully obtained an image and a spectrum of 662 keV line emission with this method. As a next step, development of larger double-sided Si strip detectors with a size of 4 cm x 4 cm is underway to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well.

  13. Solution-Derived Sodalite Made with Si- and Ge-Ethoxide Precursors for Immobilizing electrorefiner salt

    SciTech Connect

    Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

    2016-01-01

    Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite to immobilize a mixed chloride salt using solution-based techniques. Sodalites were made using different Group IV contributions from either Si(OC2H5)4 or Ge(OC2H5)4, NaAlO2, and a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. Additionally, 6 glass binders at low loadings of 5 mass% were evaluated as sintering aids for the consolidation process. The approach of using the organic Group IV additives can be used to produce large quantities of sodalite at room temperature and shows promise over a method where colloidal silica is used as the silica source. However, the small particle sizes inhibited densification during pressure-less sintering.

  14. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  15. Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

    NASA Astrophysics Data System (ADS)

    Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

    2016-03-01

    Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

  16. New approach to the growth of low dislocation relaxed SiGe material

    NASA Astrophysics Data System (ADS)

    Powell, A. R.; Iyer, S. S.; LeGoues, F. K.

    1994-04-01

    In this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an ultrathin silicon on insulator (SOI) substrate with a superficial silicon thickness less than the SiGe layer thickness. Initially, the thin Si layer is put under tension due to an equalization of the strain between the Si and SiGe layers. Thereafter, the strain created in the thin Si layer relaxes by plastic deformation. Since the dislocations are formed and glide in the thin Si layer, no threading dislocation is ever introduced in to the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis. We thus have a method for producing very low dislocation, relaxes SiGe films with the additional benefit of an SOI substrate.

  17. The bis metallacyclic anion [U(N{SiMe3}2)(CH2SiMe2N{SiMe3})2]-.

    PubMed

    Bénaud, Olivier; Berthet, Jean-Claude; Thuéry, Pierre; Ephritikhine, Michel

    2010-09-01

    A series of bis metallacyclic compounds [M(THF)(x)UN*(CH(2)SiMe(2)N{SiMe(3)})(2)](n) [M = Na (2), Li (3), or K (4), N* = N(SiMe(3))(2)] were isolated from reactions of UCl(4) or [UN*(3)Cl] with MN* or by treatment of [UN*(2)(CH(2)SiMe(2)N{SiMe(3)})] (1) or [UN*(3)] with MN*, MH, or LiCH(2)SiMe(3) in tetrahydrofuran (THF). Crystals of 2a x 1/6n-pentane (x = 0), 2b (x = 1), 2c (x = 2), and 4b (x = 1) were obtained by crystallization of 2 and 4 from pentane, and [Na(18-crown-6)(THF)][UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] (2d) and [Na(15-crown-5)][UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] (2e) were formed upon addition of the crown ether. The crystal structures of 2a-2e and 4b exhibit the same [UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] units which are linked to Na or K atoms via methylene or methyl groups, giving either tight cation-anion pairs (2d and 2e) or one-dimensional (1D) or two-dimensional (2D) polymeric compounds with Na or K atoms in bridging position between methylene groups of adjacent units. Reaction of 2 with CO gave the double insertion derivative [Na(2)(THF)U(2)N*(2)(OC{=CH(2)}SiMe(2)N{SiMe(3)})(4)] (5b) and [Na(15-crown-5)UN*(OC{=CH(2)}SiMe(2)N{SiMe(3)})(2)] (5c) in the presence of the crown ether. Thermal decomposition of 5b gave [Na(2)(THF)U(OC{=CH(2)}SiMe(2)N{SiMe(3)})(3)](2) (6), the product of CO insertion into the putative tris metallacycle [Na(2)(THF)(x)U(CH(2)SiMe(2)N{SiMe(3)})(3)]. The crystal structures of 5b, 5c, and 6 show the interaction of the Na atoms with the exocyclic C=CH(2) bonds. Diffusion of CO(2) into a THF solution of 2 led to the formation of [Na(THF)(x)UN*(OC{O}CH(2)SiMe(2)N{SiMe(3)})(2)] (7) which crystallized from pyridine/pentane to give [Na(THF)(2)(py)(2)UN*(OC{O}CH(2)SiMe(2)N{SiMe(3)})(2)] x 0.5 py (8 x 0.5 py), the first crystallographically characterized complex resulting from CO(2) insertion into a M(CH(2)SiMe(2)N{SiMe(3)}) metallacycle. Compound 2 reacted with I(2) to give [UN*(CH(2)SiMe(2)N{SiMe(3)})(N{SiMe(3)}SiMe(2)CH(2)I)] (9) which would

  18. A model for thermal oxidation of Si and SiC including material expansion

    NASA Astrophysics Data System (ADS)

    Christen, T.; Ioannidis, A.; Winkelmann, C.

    2015-02-01

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  19. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays.

    PubMed

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-29

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications. PMID:27319739

  20. A model for thermal oxidation of Si and SiC including material expansion

    SciTech Connect

    Christen, T. Ioannidis, A.; Winkelmann, C.

    2015-02-28

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  1. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays

    NASA Astrophysics Data System (ADS)

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-01

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications.

  2. Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes

    SciTech Connect

    Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

    2010-08-04

    Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

  3. δ30Si systematics in a granitic saprolite, Puerto Rico

    USGS Publications Warehouse

    Ziegler, Karen; Chadwick, Oliver A.; White, Arthur F.; Brzezinski, Mark A.

    2005-01-01

    Granite weathering and clay mineral formation impart distinct and interpretable stable Si isotope (δ30Si) signatures to their solid and aqueous products. Within a saprolite, clay minerals have δ30Si values ∼2.0‰ more negative than their parent mineral and the δ30Si signature of the bulk solid is determined by the ratio of primary to secondary minerals. Mineral-specific weathering reactions predominate at different depths, driving changes in differing δ30Sipore watervalues. At the bedrock-saprolite interface, dissolution of plagioclase and hornblende creates δ30Sipore water signatures more positive than granite by up to 1.2‰; these reactions are the main contributor of Si to stream water and determine its δ30Si value. Throughout the saprolite, biotite weathering releases Si to pore waters but kaolinite overgrowth formation modulates its contribution to pore-water Si. The influence of biotite on δ30Sipore water is greatest near the bedrock where biotite-derived Si mixes with bulk pore water prior to kaolinite formation. Higher in the saprolite, biotite grains have become more isolated by kaolinite overgrowth, which consumes biotite-derived Si that would otherwise influence δ30Sipore water. Because of this isolation, which shifts the dominant source of pore-water Si from biotite to quartz, δ30Sipore water values are more negative than granite by up to 1.3‰ near the top of the saprolite.

  4. Equilibrium and kinetic Si isotope fractionation factors and their implications on Si isotope distributions in the Earth's surface environments

    NASA Astrophysics Data System (ADS)

    Tang, M.; Zhang, S.; Liu, Y.

    2015-12-01

    Several important equilibrium Si isotope fractionation factors among minerals, organic molecules and the H4SiO4 solution are complemented to facilitate explanation of distributions of Si isotope in the Earth's surface environments. The results reveal that heavy Si isotopes will be significantly enriched in the secondary silicate minerals in comparison to aqueous H4SiO4. On the contrary, quadra-coordinated organosilicon complexes are enriched in light silicon isotope relative to the solution. The extent of 28Si-enrichment in hyper-coordinated organosilicon complexes is found the largest. In addition, the large kinetic isotope effect associated with the polymerization of monosilicic acid and dimer is calculated and the result supports previous statement that highly 28Si-enrichment in the formation of amorphous quartz precursor contributes to the discrepancy between theoretical calculations and field observations. With equilibrium Si isotope fractionation factors provided here, Si isotope distributions in many surface systems of the Earth can be explained. For example, the change of bulk soil δ30Si can be predicted as a concave pattern with respect to weathering degree, with the minimum value where allophane completely dissolves and the total amount of sesqui-oxides and poorly crystalline minerals reaches its maximum. When well-crystallized clays start to precipitate from pore solutions under equilibrium conditions, the bulk soil δ30Si will increase again and reach a constant value. Similarly, the precipitation of crystalline smectite and the dissolution of poorly crystalline kaolinite may explain δ30Si variations in the ground water profile. Equilibrium Si isotope fractionations among quadra-coordinated organosilicon complexes and the H4SiO4 solution may also shed the light on the Si isotope distributions in Si-accumulating plants.

  5. Dietary fiber for dogs: II. Iso-total dietary fiber (TDF) additions of divergent fiber sources to dog diets and their effects on nutrient intake, digestibility, metabolizable energy and digesta mean retention time.

    PubMed

    Fahey, G C; Merchen, N R; Corbin, J E; Hamilton, A K; Serbe, K A; Hirakawa, D A

    1990-12-01

    The objectives of this study were to examine widely divergent fiber sources for their efficacy as ingredients in a meat-based dog diet and to determine the effects of these fibers on fecal excretion responses and mean retention time of marked fiber in the gastrointestinal tract of the dog. Fiber sources tested included beet pulp (BP), tomato pomace (TP), peanut hulls (PH), wheat bran (WB) and alkaline hydrogen peroxide-treated wheat straw (AHPWS). Diets were isonitrogenous (5.3% N) and iso-total dietary fiber (TDF; 12.5%). Thirty female English Pointers (five/treatment) were used in the experiment. Intakes of DM and OM were similar among treatments. The highest intakes of ether extract (EE) occurred on the TP, PH and WB treatments. Dogs fed PH ingested the most crude fiber (23.6 g/d), NDF (53.5 g/d), ADF (34.3 g/d) and TDF (59.7 g/d). Digestibilities of DM and OM for all fiber treatments were lower than the control (87.6 vs 81.8% for DM; 90.2 vs 85.4% for OM), but values were similar among fiber sources. The highest EE and N digestibilities occurred on the control and AHPWS treatments. No differences were noted among exogenous fiber-containing treatments in fiber component digestibility. Digestible energy and ME values generally were similar among treatments. Among fiber sources, BP resulted in the greatest amount of wet feces excreted (270 g/d) and the lowest fecal DM (30.3%). No differences among fiber sources were noted in frequency of defecation or mean retention time. Iso-TDF diets (containing, on average, 12.5% TDF) appear to be utilized similarly, regardless of the diversity in sources of fiber tested.

  6. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency

    NASA Astrophysics Data System (ADS)

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-01

    A p-n junction was made on p-type Si<100> wafer (15 × 15 × 0.2 mm3 in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n+ Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm-2, the fill factor was 0.779 and the conversion efficiency was 18.97%.

  7. Ge/Si in Hamersley BIF as tracer of hydrothermal Si and Ge inputs to the Paleoproterozoic ocean

    NASA Astrophysics Data System (ADS)

    Alibert, Chantal; Kinsley, Leslie

    2016-07-01

    Ge/Si and Ge/Fe ratios have been measured by laser ablation ICP-MS in selected sections of the Hamersley banded iron-formation (BIF), including 'chert-siderite' bands (i.e. carbonate- and silicate-facies BIF). The major Ge carriers are magnetite and hematite in the oxide-facies, and the Fe-rich silicates greenalite, minnesotaite and stilpnomelane in chert-siderite bands, while quartz has the lowest Ge/Si ratios (0.15-0.7 μmol/mol), in accord with discrimination against Ge in quartz. The homogeneous Si/Fe ratio of 1.25 for Dales Gorge oxide-facies BIF is consistent with Si-ferrihydrite as precursor phase. This Si concentration is sufficiently high for formation of iron-free silica clusters at the surface of ferrihydrite, so that only a minor fractionation of the Ge/Si ratio should result from preferential Ge adsorption relative to Si. Hematite-chert bands that have been minimally altered by metamorphic reactions and/or fluid metasomatism, are the preferred material to determine the sources of silica in Hamersley BIF. Variations of Fe/Si and Ge/Si ratios in chert mesobands are interpreted as the result of diagenetic mineral segregation. A consistent Ge/Si ≈3 μmol/mol is then derived by extrapolation of measured Ge/Si ratios to the average Fe/Si composition of Dales Gorge BIF. Simple mass balance calculations indicate hydrothermal inputs to the ocean of the order of 25% for Si and 90% for Ge, assuming Ge/Si = 10 μmol/mol for high-temperature hydrothermal fluids. The high Si concentration in siderite-chert bands (Si/Fe ≈ 4) demands only a small amount of Si-ferrihydrite precursor and some excess silica likely precipitated in pore-water oversaturated with regard to amorphous silica. The average Ge/Si = 0.80 ± 0.1 μmol/mol for bulk chert-siderite samples, including some stilpnomelane-rich cherts, is within the compositional range of modern riverine and aeolian inputs, pointing to a continental Si source during their deposition.

  8. Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

    NASA Astrophysics Data System (ADS)

    Khelifi, Rim; Mathiot, Daniel; Gupta, Raghav; Muller, Dominique; Roussel, Manuel; Duguay, Sébastien

    2013-01-01

    It is shown that co-implantation, with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers. Atom probe tomography is used to image directly the spatial distribution of the various species at the atomic scale, evidencing that the P and As atoms are efficiently introduced inside the Si nanocrystals. In addition, we report on the influence of the dopant doses on the Si-nc's related photoluminescence as well as on the I(V) characteristics of MOS structures including these Si-nc's.

  9. The 28Si(p,t)26Si*(p) reaction and implications for the astrophysical 25Al(p,gamma)26Si reaction rate

    SciTech Connect

    Chipps, K.; Bardayan, Daniel W; Chae, K. Y.; Cizewski, J. A.; Kozub, R. L.; Liang, J Felix; Matei, Catalin; Moazen, Brian; Nesaraja, Caroline D; O'Malley, Patrick; Pain, S. D.; Peters, W. A.; Pittman, S. T.; Schmitt, Kyle; Smith, Michael Scott

    2010-10-01

    Several resonances in 25Al(p, )26Si have been studied via the 28Si(p,t)26Si reaction. Triton energies and angular distributions were measured using a segmented annular detector array. An additional silicon detector array was used to simultaneously detect the coincident protons emitted from the decay of states in 26Si above the proton threshold, in order to determine branching ratios. A resonance at 5927 4 keV has been experimentally confirmed as the first = 0 state above the proton threshold, with a proton branching ratio consistent with one.

  10. Atomic state and characterization of nitrogen at the SiC/SiO{sub 2} interface

    SciTech Connect

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-21

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO{sub 2} interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO{sub 2}). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs.

  11. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.

    PubMed

    Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H

    2015-11-11

    Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

  12. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect

    Dayeh, Shadi A.; Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas

    2010-03-01

    }20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt

  13. Effect composition of SiCp and TiB to the mechanical properties of composite Al7Si-Mg-SiCp by the method of semi solid stir casting

    NASA Astrophysics Data System (ADS)

    Bhiftime, E. I.; Sulardjaka, Nugroho, Sri

    2016-04-01

    Recently, studies on Aluminum Matrix Composite (AMC) were growing rapidly. AMC reinforced with SiCp particles in the semi solid stir casting method was the most simple way. In particular, the purpose of the present study was to investigate the effect composition of SiCp and TiB to the mechanical properties of the composites Al7Si-Mg-SiCp and Al7Si-Mg-TiB-SiCp. The composites used were Al7Si as the matrix and SiCp as the reinforcement (10, 15, 20 wt%). The casting method used on the study was the semi solid stir casting. The matrix was melted at the temperature of 800 °C. Then, the stirring process started at 590 °C with the speed of 500 rpm for 180 seconds. The composites was heated again until the pouring temperature was at 750 °C. The results of the present study indicated to be successful in which SiCp particles dispersed uniformly in the matrix composites. Further, the hardness value and porosity of the composites Al7Si-Mg-SiCp and Al7Si-Mg-TiB-SiCp increased along with the addition of TiB. Besides, the hardness value increased in the average of 10.5% at the variation of 20% SiCp. Whereas, the porosity value increased in the average of 54.3% at the variation of 20% SiCp.

  14. Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

    NASA Astrophysics Data System (ADS)

    Stegner, A. R.; Pereira, R. N.; Klein, K.; Wiggers, H.; Brandt, M. S.; Stutzmann, M.

    2007-12-01

    Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>1018 cm-3. In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 1019 cm-3. Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g⊥=2.0087,g∥=2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR.

  15. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    NASA Astrophysics Data System (ADS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-08-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm-2 of Nickle-63 (63Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure.

  16. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.

    PubMed

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M; Hirohata, Atsufumi; Lazarov, Vlado K

    2016-10-01

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  17. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

    NASA Astrophysics Data System (ADS)

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hirohata, Atsufumi; Lazarov, Vlado K.

    2016-10-01

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  18. Elastic and inelastic properties of SiC/Si biomorphic composites and biomorphic SiC based on oak and eucalyptus

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Nefagin, A. S.; Smirnov, B. I.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.; Sepulveda, R.

    2006-09-01

    This paper reports on the results of a comparative investigation into the elastic and microplastic properties of biomorphic SiC/Si composites and biomorphic SiC prepared by pyrolysis of oak and eucalyptus with subsequent infiltration of molten silicon into a carbon matrix and additional chemical treatment to remove excess silicon. The acoustic studies were performed by the composite oscillator technique using resonant longitudinal vibrations at frequencies of about 100 kHz. It is shown that, in biomorphic SiC (as in biomorphic SiC/Si) at small-amplitude strains ɛ, adsorption and desorption of the environmental (air) molecules determine to a considerable extent the Young’s modulus E and the internal friction (decrement of acoustic vibrations δ) and that the changes in E and δ at these amplitudes are irreversible. The stress-microplastic strain curves are constructed from the acoustic data for the materials under study at temperatures of 100 and 290 K.

  19. Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4 whiskers

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor)

    2002-01-01

    A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

  20. Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4whiskers

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor)

    2001-01-01

    A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.

  1. Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures.

    PubMed

    Tsuchiya, Taku; Tsuchiya, Jun

    2011-01-25

    Ultrahigh-pressure phase relationship of SiO(2) silica in multimegabar pressure condition is still quite unclear. Here, we report a theoretical prediction on a previously uncharacterized stable structure of silica with an unexpected hexagonal Fe(2)P-type form. This phase, more stable than the cotunnite-type structure, a previously postulated postpyrite phase, was discovered to stabilize at 640 GPa through a careful structure search by means of ab initio density functional computations over various structure models. This is the first evidential result of the pressure-induced phase transition to the Fe(2)P-type structure among all dioxide compounds. The crystal structure consists of closely packed, fairly regular SiO(9) tricapped trigonal prisms with a significantly compact lattice. Additional investigation further elucidates large effects of this phase change in SiO(2) on the stability of MgSiO(3) and CaSiO(3) at multimegabar pressures. A postperovskite phase of MgSiO(3) breaks down at 1.04 TPa along an assumed adiabat of super-Earths and yields Fe(2)P-type SiO(2) and CsCl (B2)-type MgO. CaSiO(3) perovskite, on the other hand, directly dissociates into SiO(2) and metallic CaO, skipping a postperovskite polymorph. Predicted ultrahigh-pressure and temperature phase diagrams of SiO(2), MgSiO(3), and CaSiO(3) indicate that the Fe(2)P-type SiO(2) could be one of the dominant components in the deep mantles of terrestrial exoplanets and the cores of gas giants. PMID:21209327

  2. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  3. Development and Characterization of SiC)/ MoSi2-Si3N4(p) Hybrid Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    1998-01-01

    Intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cu cm versus 9 g/cu cm for current engine materials), and ease of machining, make it an attractive structural material. However, the use of MoSi2 has been hindered due to its poor toughness at low temperatures, poor creep resistance at high temperatures, and accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 450 and 550 C. Continuous fiber reinforcing is very effective means of improving both toughness and strength. Unfortunately, MoSi2 has a relatively high coefficient of thermal expansion (CTE) compared to potential reinforcing fibers such as SiC. The large CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling. Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix

  4. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

    PubMed

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-21

    A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n(+) Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%.

  5. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

    PubMed

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-21

    A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n(+) Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%. PMID:27640447

  6. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  7. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  8. Landscape cultivation alters δ30Si signature in terrestrial ecosystems

    NASA Astrophysics Data System (ADS)

    Vandevenne, Floor; Delvaux, Claire; Hughes, Harold; Ronchi, Benedicta; Clymans, Wim; Barao, Ana Lucia; Govers, Gerard; Cornelis, Jean Thomas; André, Luc; Struyf, Eric

    2015-04-01

    Despite increasing recognition of the importance of biological Si cycling in controlling dissolved Si (DSi) in soil and stream water, effects of human cultivation on the Si cycle remain poorly understood. Sensitive tracer techniques to identify and quantify Si in the soil-plant-water system could be highly relevant in addressing these uncertainties. Stable Si isotopes are promising tools to define Si sources and sinks along the ecosystem flow path, as intense fractionation occurs during chemical weathering and uptake of dissolved Si in plants. Yet they remain underexploited in the end product of the soil-plant system: the soil water. Here, stable Si isotope ratios (δ30Si) of dissolved Si in soil water were measured along a land use gradient (continuous forest, continuous pasture, young cropland and continuous cropland) with similar parent material (loess) and homogenous bulk mineralogical and climatological (Belgium). Soil water δ30Si signatures are clearly separated along the gradient, with highest average signatures in continuous cropland (+1.61%), intermediate in pasture (+1.05%) and young cropland (+0.89%) and lowest in forest soil water (+0.62%). Our data do not allow distinguishing biological from pedogenic/lithogenic processes, but point to a strong interaction of both. We expect that increasing export of light isotopes in disturbed land uses (i.e. through agricultural harvest), and higher recycling of 28Si and elevated weathering intensity (including clay dissolution) in forest systems will largely determine soil water δ30Si signatures of our systems. Our results imply that soil water δ30Si signature is biased through land management before it reaches rivers and coastal zones, where other fractionation processes take over (e.g. diatom uptake and reverse weathering in floodplains). In particular, a direct role of agriculture systems in lowering export Si fluxes towards rivers and coastal systems has been shown. Stable Si isotopes have a large potential

  9. Landscape cultivation alters δ30Si signature in terrestrial ecosystems.

    NASA Astrophysics Data System (ADS)

    Vandevenne, F. I.; Delvaux, C.; Huyghes, H.; Ronchi, B.; Govers, G.; Barão, A. L.; Clymans, W.; Meire, P.; André, L.; Struyf, E.

    2014-12-01

    Despite increasing recognition of the importance of biological Si cycling in controlling dissolved Si (DSi) in soil and stream water, effects of human cultivation on the Si cycle remain poorly understood. Sensitive tracer techniques to identify and quantify Si in the soil-plant-water system could be highly relevant in addressing these uncertainties. Stable Si isotopes are promising tools to define Si sources and sinks along the ecosystem flow path, as intense fractionation occurs during chemical weathering and uptake of dissolved Si in plants. Yet they remain underexploited in the end product of the soil-plant system: the soil water. Here, stable Si isotope ratios (δ30Si) of dissolved Si in soil water were measured along a land use gradient (continuous forest, continuous pasture, young cropland and continuous cropland) with similar parent material (loess) and homogenous bulk mineralogical and climatological properties (Belgium). Soil water δ30Si signatures are clearly separated along the gradient, with highest average signatures in continuous cropland (+1.61‰), intermediate in pasture (+1.05‰) and young cropland (+0.89 ‰) and lowest in forest soil water (+0.62‰). Our data do not allow distinguishing biological from pedogenic/lithogenic processes, but point to a strong interaction of both. We expect that increasing export of light isotopes in disturbed land uses (i.e. through agricultural harvest), and higher recycling of 28Si and elevated weathering intensity (including clay dissolution) in forest systems will largely determine soil water δ30Si signatures of our systems. Our results imply that soil water δ30Si signature is biased through land management before it reaches rivers and coastal zones, where other fractionation processes take over (e.g. diatom uptake and reverse weathering in floodplains). In particular, a direct role of agriculture systems in lowering export Si fluxes towards rivers and coastal systems has been shown. Stable Si isotopes have

  10. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    NASA Technical Reports Server (NTRS)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  11. On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

    SciTech Connect

    Mahan, A. H.; Ahrenkiel, S. P.; Roy, B.; Schropp, R.E.I.; Li, H.; Ginley, D. S.

    2006-05-01

    We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600 C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasing film CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

  12. The use of Ge/Si ratios to quantify Si transformations in grassland ecosystems

    NASA Astrophysics Data System (ADS)

    Blecker, S. W.; Derry, L. A.; Chadwick, O. A.; Kelly, E. F.

    2005-12-01

    . The data suggest that stream water Si is not derived entirely from ground water and that biogenic sources are plausible.

  13. Mechanism of tantalum adhesion on SiLK{sup TM}

    SciTech Connect

    Hu Yue; Yang Shuowang; Chen Xiantong; Lu Dong; Feng Yuanping; Wu Ping

    2005-09-19

    Tantalum adhesion on SiLK{sup TM} was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK{sup TM}. In addition, the degradation effects of H{sub 2}/He reactive plasma clean on Ta adhesion on SiLK{sup TM} was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK{sup TM} with Cu up to seven metal layers.

  14. Partitioning of Si and platinum group elements between liquid and solid Fe-Si alloys

    NASA Astrophysics Data System (ADS)

    Morard, G.; Siebert, J.; Badro, J.

    2014-05-01

    Crystallization of the Earth's inner core fractionates major and minor elements between the solid and liquid metal, leaving physical and geochemical imprints on the Earth's core. For example, the density jump observed at the Inner Core Boundary (ICB) is related to the preferential partitioning of lighter elements in the liquid outer core. The fractionation of Os, Re and Pt between liquid and solid during inner core crystallization has been invoked as a process that explains the observed Os isotopic signature of mantle plume-derived lavas (Brandon et al., 1998; Brandon and Walker, 2005) in terms of core-mantle interaction. In this article we measured partitioning of Si, Os, Re and Pt between liquid and solid metal. Isobaric (2 GPa) experiments were conducted in a piston-cylinder press at temperatures between 1250 °C and 1600 °C in which an imposed thermal gradient through the sample provided solid-liquid coexistence in the Fe-Si system. We determined the narrow melting loop in the Fe-Si system using Si partitioning values and showed that order-disorder transition in the Fe-Si solid phases can have a large effect on Si partitioning. We also found constant partition coefficients (DOs, DPt, DRe) between liquid and solid metal, for Si concentrations ranging from 2 to 12 wt%. The compact structure of Fe-Si liquid alloys is compatible with incorporation of Si and platinum group elements (PGEs) elements precluding solid-liquid fractionation. Such phase diagram properties are relevant for other light elements such as S and C at high pressure and is not consistent with inter-elemental fractionation of PGEs during metal crystallization at Earth's inner core conditions. We therefore propose that the peculiar Os isotopic signature observed in plume-derived lavas is more likely explained by mantle source heterogeneity (Meibom et al., 2002; Baker and Krogh Jensen, 2004; Luguet et al., 2008).

  15. Variations of δ 30Si and Ge/Si with weathering and biogenic input in tropical basaltic ash soils under monoculture

    NASA Astrophysics Data System (ADS)

    Opfergelt, S.; Cardinal, D.; André, L.; Delvigne, C.; Bremond, L.; Delvaux, B.

    2010-01-01

    In soils, silicon released by mineral weathering can be retrieved from soil solution through clay formation, Si adsorption onto secondary oxides and plant uptake, thereby impacting the Si-isotopic signature and Ge/Si ratio of dissolved Si (DSi) exported to rivers. Here we use these proxies to study the contribution of biogenic Si (BSi) in a soil-plant system involving basaltic ash soils differing in weathering degree under intensive banana cropping. δ 30Si and Ge/Si ratios were determined in bulk soils (<2 mm), sand (50-2000 μm), silt (2-50 μm), amorphous Si (ASi, 2-50 μm) and clay (<2 μm) fractions: δ 30Si by MC-ICP-MS Nu Plasma in medium resolution, operating in dry plasma with Mg doping (δ 30Si vs. NBS28 ± 0.12‰ ± 2 σSD), Ge/Si computed after determination of Ge and Si concentrations by HR-ICP-MS and ICP-AES, respectively. Components of the ASi fraction were quantified by microscopic counting (phytoliths, diatoms, ashes). Compared to fresh ash (δ 30Si = -0.38‰; Ge/Si = 2.21 μmol mol -1), soil clay fractions (<2 μm) were enriched in light Si isotopes and Ge: with increasing weathering degree, δ 30Si decreased from -1.19 to -2.37‰ and Ge/Si increased from 4.10 to 5.25 μmol mol -1. Sand and silt fractions displayed δ 30Si values close to fresh ash (-0.33‰) or higher due to saharian dust quartz deposition, whose contribution was evaluated by isotopic mass balance calculation. Si-isotopic signatures of bulk soils (<2 mm) were strongly governed by the relative proportions of primary and secondary minerals: the bulk soil Si-isotopic budget could be closed indicating that all the phases involved were identified. Microscopic counting highlighted a surface accumulation of banana phytoliths and a stable phytolith pool from previous forested vegetation. δ 30Si and Ge/Si values of clay fractions in poorly developed volcanic soils, isotopically heavier and Ge-depleted in surface horizons, support the occurrence of a DSi source from banana phytolith

  16. Electroporation-induced siRNA precipitation obscures the efficiency of siRNA loading into extracellular vesicles.

    PubMed

    Kooijmans, Sander A A; Stremersch, Stephan; Braeckmans, Kevin; de Smedt, Stefaan C; Hendrix, An; Wood, Matthew J A; Schiffelers, Raymond M; Raemdonck, Koen; Vader, Pieter

    2013-11-28

    Extracellular vesicles (EVs) are specialised endogenous carriers of proteins and nucleic acids and are involved in intercellular communication. EVs are therefore proposed as candidate drug delivery systems for the delivery of nucleic acids and other macromolecules. However, the preparation of EV-based drug delivery systems is hampered by the lack of techniques to load the vesicles with nucleic acids. In this work we have now characterised in detail the use of an electroporation method for this purpose. When EVs were electroporated with fluorescently labelled siRNA, siRNA retention was comparable with previously published results (20-25% based on fluorescence spectroscopy and fluorescence fluctuation spectroscopy), and electroporation with unlabelled siRNA resulted in significant siRNA retention in the EV pellet as measured by RT-PCR. Remarkably, when siRNA was electroporated in the absence of EVs, a similar or even greater siRNA retention was measured. Nanoparticle tracking analysis and confocal microscopy showed extensive formation of insoluble siRNA aggregates after electroporation, which could be dramatically reduced by addition of EDTA. Other strategies to reduce aggregate formation, including the use of cuvettes with conductive polymer electrodes and the use of an acidic citrate electroporation buffer, resulted in a more efficient reduction of siRNA precipitation than EDTA. However, under these conditions, siRNA retention was below 0.05% and no significant differences in siRNA retention could be measured between samples electroporated in the presence or absence of EVs. Our results show that electroporation of EVs with siRNA is accompanied by extensive siRNA aggregate formation, which may cause overestimation of the amount of siRNA actually loaded into EVs. Moreover, our data clearly illustrate that electroporation is far less efficient than previously described, and highlight the necessity for alternative methods to prepare siRNA-loaded EVs.

  17. Microstructure of as-fabricated UMo/Al(Si) plates prepared with ground and atomized powder

    NASA Astrophysics Data System (ADS)

    Jungwirth, R.; Palancher, H.; Bonnin, A.; Bertrand-Drira, C.; Borca, C.; Honkimäki, V.; Jarousse, C.; Stepnik, B.; Park, S.-H.; Iltis, X.; Schmahl, W. W.; Petry, W.

    2013-07-01

    UMo-Al based fuel plates prepared with ground U8wt%Mo, ground U8wt%MoX (X = 1 wt%Pt, 1 wt%Ti, 1.5 wt%Nb or 3 wt%Nb) and atomized U7wt%Mo have been examined. The first finding is that that during the fuel plate production the metastable γ-UMo phases partly decomposed into two different γ-UMo phases, U2Mo and α'-U in ground powder or α″-U in atomized powder. Alloying small amounts of a third element to the UMo had no measurable effect on the stability of the γ-UMo phase. Second, the addition of some Si inside the Al matrix and the presence of oxide layers in ground and atomized samples is studied. In the case with at least 2 wt%Si inside the matrix a Silicon rich layer (SiRL) forms at the interface between the UMo and the Al during the fuel plate production. The SiRL forms more easily when an Al-Si alloy matrix - which is characterized by Si precipitates with a diameter ⩽1 μm - is used than when an Al-Si mixed powder matrix - which is characterized by Si particles with some μm diameter - is used. The presence of an oxide layer on the surface of the UMo particles hinders the formation of the SiRL. Addition of some Si into the Al matrix [7-11]. Application of a protective barrier at the UMo/Al interface by oxidizing the UMo powder [7,12]. Increase of the Mo content or use of UMo alloys with ternary element addition X (e.g. X = Nb, Ti, Pt) to stabilize the γ-UMo with respect to α-U or to control the UMo-Al interaction layer kinetics [9,12-24]. Use of ground UMo powder instead of atomized UMo powder [10,25] The points 1-3 are to limit the formation of the undesired UMo/Al layer. Especially the addition of Si into the matrix has been suggested [3,7,8,10,11,26,27]. It has been often mentioned that Silicon is efficient in reducing the Uranium-Aluminum diffusion kinetics since Si shows a higher chemical affinity to U than Al to U. Si suppresses the formation of brittle UAl4 which causes a huge swelling during the irradiation. Furthermore it enhances the

  18. Kentucky Department for Natural Resources and Environmental Protection permit application for air contaminant source: SRC-I demonstration plant, Newman, Kentucky. Supplement I. [Additional information on 38 items requested by KY/DNREP

    SciTech Connect

    Pearson, Jr., John F.

    1981-02-13

    In response to a letter from KY/DNREP, January 19, 1981, ICRC and DOE have prepared the enclosed supplement to the Kentucky Department for Natural Resources and Environmental Protection Permit Application for Air Contaminant Source for the SRC-I Demonstration Plant. Each of the 38 comments contained in the letter has been addressed in accordance with the discussions held in Frankfort on January 28, 1981, among representatives of KY/DNREP, EPA Region IV, US DOE, and ICRC. The questions raised involve requests for detailed information on the performance and reliability of proprietary equipment, back-up methods, monitoring plans for various pollutants, composition of wastes to flares, emissions estimates from particular operations, origin of baseline information, mathematical models, storage tanks, dusts, etc. (LTN)

  19. Formation of polychlorinated dibenzo-p-dioxins/dibenzofurans (PCDD/Fs) from a refinery process for zinc oxide used in feed additives: a source of dioxin contamination in Chilean pork.

    PubMed

    Kim, Meekyung; Kim, Dong-Gyu; Choi, Si-Weon; Guerrero, Pedro; Norambuena, Julio; Chung, Gab-Soo

    2011-02-01

    The Republic of Korea found dioxin at concentrations exceeding the Korean maximum residue limit (MRL) in pork (2 pg TEQ g(-1) fat) imported from Chile in June 2008. Korea and Chile collaborated and investigated to find out the sources of contamination. An isotope dilution method and high resolution gas chromatography/mass spectrometry (HR-GC/MS) were used for the analysis of PCDD/Fs. PCDD/Fs were found from 2.17 to 36.7 pg TEQ g(-1) fat from Chilean pork. 2,3,4,7,8-PeCDF, 1,2,3,4,7,8-HxCDF, 1,2,3,6,7,8-HxCDF, and 2,3,4,6,7,8-HxCDF were found as the major congeners in pork samples. 2,3,4,7,8-PeCDF showed the highest concentration and contributed about 30% among the congeners in most of the samples. 2,3,7,8-TCDD, 1,2,3,7,8,9-HxCDD, OCDD, 2,3,7,8-TCDF, 1,2,3,7,8-PeCDF, 1,2,3,7,8,9-HxCDF, and OCDF were not detected or exist at background levels in the less contaminated samples. Remarkably high concentrations of PCDD/Fs were found in samples of zinc oxide (17147 pg TEQ g(-1)), zinc oxide based premix (6673 pg TEQ g(-1)), and the residue crust (800 pg TEQ g(-1)) in a mixing chamber in the feed mill. From the results of various investigations, this case concluded that zinc oxide in the feed was the major source of the dioxin contamination in pork. The dioxins were formed from a metal refinery process to collect zinc oxide.

  20. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    NASA Astrophysics Data System (ADS)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  1. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  2. Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wu, Sudong; Kambara, Makoto; Yoshida, Toyonobu

    Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl3-H2-Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H2/TCS ratio of 2-3.

  3. Wafer edge protection kit for MEMS and TSV Si-etching

    NASA Astrophysics Data System (ADS)

    Wieland, Robert; Nguyen, K.; Seidelmann, U.; Scholz, M.; Schrag, G.

    2015-05-01

    A new process kit for a SPTS Pegasus DRIE Si-Etch tool has been developed and tested for several different process regimes, e.g. bulk-Si cavity etching and TSV (through-Silicon-Via) etching with high aspect ratios <10:1, using the socalled Bosch process. Additionally, Si-etch back (recess etching) with a single step process has been tested as well. The especially developed "edge protection kit", consisting of Al2O3 material and optionally of PEEK material, covers the edge of a wafer, preventing it from being etched or even being etched away. However, placing such a part on top of the cathode, results in changes of the electric field distribution and the gas flow behavior compared to the standard process kit supplied by SPTS. The consequences may be altered Si-etch rates combined with changes of the tilt and side wall taper of the etched structures, mainly near the outside regions of the wafer. To this end, extensive investigations on the mask and bulk-Si etch rates, the tilt and taper angle of various MEMS test structures and their respective uniformity over the wafer surface have been performed. Additionally, simulations applying Comsol Multiphysics have been carried out to visualize the potential impact of the new process kit on the electrical field distribution. A simplex-optimization was carried out, varying the platen power and source power, in order to improve the tilt and to maintain the proper taper angle. One major advantage of the new process kit design compared to the original one is the reduction of movable parts to a minimum.

  4. Interfacial Thickness Guidelines for SiC(Fiber)/SiC(Matrix) Composites

    NASA Technical Reports Server (NTRS)

    Hurst, Janet B.

    1998-01-01

    Researchers at the NASA Lewis Research Center have developed a guideline for the interface thickness necessary for SiC(Fiber)/SiC(Matrix) composites to demonstrate good composite properties. These composite materials have potential commercial applications for high-temperature structural components such as engine hot sections. Several samples of each were composed from three different small-diameter (less than 20 mm), polymer-derived SiC fibers that were woven into two-dimensional cloths and laid up as preforms. The preforms were treated with a chemical-vapor-infiltrated boron nitride layer as an interfacial coating on the fiber surfaces to provide the necessary debonding characteristics for successful composite behavior. Then, the preforms were filled with additional SiC as a matrix phase.

  5. Subeutectic Synthesis of Epitaxial Si-NWs with Diverse Catalysts Using a Novel Si Precursor

    PubMed Central

    2010-01-01

    The applicability of a novel silicon precursor with respect to reasonable nanowire (NW) growth rates, feasibility of epitaxial NW growth and versatility with respect to diverse catalysts was investigated. Epitaxial growth of Si-NWs was achieved using octochlorotrisilane (OCTS) as Si precursor and Au as catalyst. In contrast to the synthesis approach with SiCl4 as precursor, OCTS provides Si without the addition of H2. By optimizing the growth conditions, effective NW synthesis is shown for alternative catalysts, in particular, Cu, Ag, Ni, and Pt with the latter two being compatible to complementary metal-oxide-semiconductor technology. As for these catalysts, the growth temperatures are lower than the lowest liquid eutectic; we suggest that the catalyst particle is in the solid state during NW growth and that a solid-phase diffusion process, either in the bulk, on the surface, or both, must be responsible for NW nucleation. PMID:20843058

  6. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  7. Evaluation of photovoltaic power generation system using spherical silicon solar cells and SiC-FET inverter

    NASA Astrophysics Data System (ADS)

    Matsumoto, Taisuke; Oku, Takeo; Hiramatsu, Koichi; Yasuda, Masashi; Shirahata, Yasuhiro; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2016-02-01

    A photovoltaic power generation system using spherical silicon (Si) solar cells and silicon carbide (SiC) field effect transistor (FET) inverter for photovoltaic applications was constructed and evaluated. The spherical Si solar cells were connected to the SiC-FET inverter and were used as a power source. Comparing the photovoltaic power generation system using an ordinary Si-FET inverter, direct current-alternating current conversion efficiencies of the SiC-FET inverter were improved due to reduction of power loss in the SiC-FET inverter.

  8. Reactions of Hydrogen with Si-SiO2 Interfaces

    NASA Astrophysics Data System (ADS)

    Rashkeev, Sergey N.

    2001-11-01

    Three different types of behavior have been observed for H in Si-SiO2 structures: a) Radiation experiments established that H^+ released in SiO2 migrates to the Si-SiO2 interface where it induces new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H^+ can be cycled to and from the interface by reversing the oxide electric field; c) Hydrogen is known to passivate Si dangling bonds at the Si-SiO2 interface, but the subsequent arrival of H^+ at the interface causes depassivation of Si-H bonds. We report first-principles calculations that identify atomic-scale mechanisms for the different types of behavior and the conditions that are necessary for each. We show that the Si-Si bonds on the oxide side, i.e., ``suboxide bonds'', can trap H^+ in deep wells with asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposite Si-SiO2 interfaces if the density of suboxide bonds is high. Also, we establish that H^+ is the only stable charge state at the interface and that H^+ reacts directly (without being neutralized by a Si electron) with a Si-H bond, forming an H2 molecule and a positively charged dangling bond (Pb center). As a result, H-induced interface-trap formation does not depend on the availability of Si electrons. This work was supported in part by AFOSR Grant F-49620-99-1-0289.

  9. Elasticity, Hardness and Thermal Conductivity of Si-Ge-Based Oxynitrides (SiGeN2O)

    NASA Astrophysics Data System (ADS)

    Ding, Yingchun; Chen, Min; Wu, Wenjuan; Xu, Ming

    2016-09-01

    Capitalizing on density functional theory, the novel Si-Ge-based oxynitrides (SiGeN2O) have been studied in terms of mechanical and thermal properties. Regarding α- or β-SiGeN2O, the SiGeN2O exhibits smaller mechanical moduli, suggesting a compressible and soft material. Our calculated lattice constants of two SiGeN2O phases are very consistent with other values. In addition, the hardness for SiGeN2O is investigated in details according to different semi-empirical methods. The results indicate a small hardness of two phases of SiGeN2O. Furthermore, the mechanical anisotropy, Debye temperature and the minimum thermal conductivity of two SiGeN2O compounds are clearly estimated for both SiGeN2O compounds. It is found that the SiGeN2O compounds show low thermal conductivity, which is suitable to be used as a thermal barrier coating.

  10. Iron and silicic acid concentrations regulate Si uptake north and south of the Polar Frontal Zone in the Pacific Sector of the Southern Ocean

    NASA Astrophysics Data System (ADS)

    Franck, Valerie M.; Brzezinski, Mark A.; Coale, Kenneth H.; Nelson, David M.

    We investigated the relative roles of Fe and silicic acid availabilities in regulating Si uptake rates across the Polar Frontal Zone in the Pacific Sector of the Southern Ocean (59-68°S, 170°W) during the US JGOFS Antarctic Environment Southern Ocean Process Study (AESOPS). Meridional gradients in silicic acid concentration ([Si(OH) 4]) of about 0.25-0.56 μM km -1 were observed in this area during austral spring and summer, 1997-1998, with [Si(OH) 4] ranging from <1 to 15 μM on the north side of the gradient to 40-60 μM on the south side. In two pairs of shipboard bottle-enrichment experiments conducted north and south of the Si gradient in spring and summer, we measured the effects of Fe, Zn and Si additions on 32Si(OH)4 and 15NO3- uptake rates, biogenic silica concentrations and Si(OH) 4 : NO 3- uptake ratios. Fe addition had little or no effect on Si uptake rates in enrichments conducted in the low-Si waters north of the Si gradient. However, Fe addition increased Si uptake rates 3-5 times over controls in enrichments conducted in the high-Si waters south of the gradient, in both spring and summer. Fe addition decreased Si(OH) 4 : NO 3- uptake ratios by 2-5 times, largely due to stimulation of NO 3- uptake rates. Zn addition had no effect on Si(OH) 4 and NO 3- uptake rates. Short-term (24 h) Si additions had varying effects on Si uptake rates, depending on season and location. In spring, additions of 40 μM Si to water from bottle enrichments, conducted north of the Si gradient (in situ [Si(OH) 4] ˜15 μM) did not increase Si uptake rates initially, but did increase uptake rates after 8 days. In the summer enrichment north of the Si gradient (in situ [Si(OH) 4] ˜5 μM), 50 μM Si additions doubled in situ Si uptake rates in the initial water collected for the enrichment, and increased Si uptake rates as much as 16-fold during the experiment. South of the Si gradient, where in situ [Si(OH) 4] was >40 μM in both spring and summer, Si addition had no effect

  11. Microstructural and mechanical characterization of Al–Zn–Si nanocomposites

    SciTech Connect

    García-Villarreal, S.; Chávez-Valdez, A.; Moreno, K.J.; Leyva, C.; Aguilar-Martínez, J.A.; Hurtado, A.; Arizmendi-Morquecho, A.

    2013-09-15

    In this paper the addition of silicon nanoparticles into Al–Zn alloys to form metallic matrix nanocomposites by mechanical alloying process was investigated. The influence of various process parameters such as milling time and Si concentration in the Al–Zn matrix has an interesting effect on the microstructure and mechanical properties of the synthesized nanocomposites. The microstructural characterization of the nanocomposites was evaluated by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM–EDXS) and the mechanical properties were measured by nanoindentation and micro-hardness tests. The results showed that during mechanical milling Si is added to the Al–Zn matrix achieving a uniform and homogeneous dispersion. After solidification, it forms small particles of AlZnSi with blocky morphology in interdendritic regions. The nanoindentation profiles showed that the elastic modulus and hardness properties increase with increasing milling time. However, a high concentration of Si (> 1.2 wt.%) results in a saturation of Si in the Al–Zn matrix, which adversely affects the mechanical properties. Thus, it is important to tune the milling time and concentration of Si added to the Al–Zn alloys to control the growth of brittle phases that result in reduction of the mechanical properties of the material. - Highlights: • A novel technique for addition of Si nanocomposites into Al–Zn liquid alloy is reported. • Good dispersion and homogeneity of Si in the Al–Zn matrix are obtained. • Increasing Si content above 1.2 wt.% decreases the mechanical properties of Al–Zn alloy. • The saturation point of Si in 1.2 wt.% differs from Galvalume® composition. • The Al–Zn–1.5Si alloy with addition of nanocomposite shows 5.7 GPa of hardness.

  12. Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Stavola, Michael; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.

    2003-08-01

    A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.

  13. Oxidation and sulfidation resistant alloys with silicon additions

    SciTech Connect

    Dunning, John S.; Alman, David E.; Poston, J.A., Jr.; Siriwardane, R.

    2003-01-01

    The Albany Research Center (ARC) has considerable experience in developing lean chromium, austenitic stainless steels with improved high temperature oxidation resistance. Using basic alloy design principles, a baseline composition of Fe-16Cr-16Ni-2Mn-1Mo alloys with Si and Al addition at a maximum of 5 weight percent was selected for potential application at temperatures above 700ºC for supercritical and ultra-supercritical power plant application. The alloys were fully austenitic. Cyclic oxidation tests in air for 1000 hours were carried out on alloys with Si only or combined Si and Al additions in the temperature range 700ºC to 800ºC. Oxidation resistances of alloys with Si only additions were outstanding, particularly at 800ºC (i.e., these alloys possessed weight gains 4 times less than a standard type-304 alloy). In addition, Si alloys pre-oxidized at 800ºC, showed a zero weight gain in subsequent testing for 1000 hours at 700ºC. Similar improvements were observed for Si only alloy after H2S exposure at 700ºC compared with type 304 stainless steel. SEM and ESCA analysis of the oxide films and base material at the oxide/base metal interface were conducted to study potential rate controlling mechanisms at ARC. Depth profile analysis and element concentration profiles (argon ion etching/x-ray photoelectron spectroscopy) were conducted on oxidized specimens and base material at the National Energy Technology Laboratory.

  14. A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals

    PubMed Central

    2012-01-01

    The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si and SiO homogeneously mixed. Both samples have the same ratio of Si to O and the same contents of Si and O. The multilayered sample is found to have higher EL intensity, less turn-on voltage, lower resistance, and higher current efficiency than the single-layered one. The results indicate that Si interlayers in Si/SiO may act as carrier channels, which promote carrier transport and enhance the EL emission of Si-nc. PMID:22448989

  15. Si quantum dots in silicon nitride: Quantum confinement and defects

    SciTech Connect

    Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  16. Si quantum dots in silicon nitride: Quantum confinement and defects

    NASA Astrophysics Data System (ADS)

    Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.

    2015-12-01

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.

  17. [Food additives and healthiness].

    PubMed

    Heinonen, Marina

    2014-01-01

    Additives are used for improving food structure or preventing its spoilage, for example. Many substances used as additives are also naturally present in food. The safety of additives is evaluated according to commonly agreed principles. If high concentrations of an additive cause adverse health effects for humans, a limit of acceptable daily intake (ADI) is set for it. An additive is a risk only when ADI is exceeded. The healthiness of food is measured on the basis of nutrient density and scientifically proven effects.

  18. Aperiodic Mo/Si multilayers for hard x-rays.

    PubMed

    Pardini, Tom; Alameda, Jennifer; Platonov, Yuriy; Robinson, Jeff; Soufli, Regina; Spiller, Eberhard; Walton, Chris; Hau-Riege, Stefan P

    2016-08-01

    In this work we have developed aperiodic Molybdenum/Silicon (Mo/Si) multilayers (MLs) to reflect 16.25 keV photons at a grazing angle of incidence of 0.6° ± 0.05°. To the best of our knowledge this is the first time this material system has been used to fabricate aperiodic MLs for hard x-rays. At these energies new hurdles arise. First of all a large number of bilayers is required to reach saturation. This poses a challenge from the manufacturing point of view, as thickness control of each ML period becomes paramount. The latter is not well defined a priori, due to the thickness of the interfacial silicide layers which has been observed to vary as a function of Mo and Si thickness. Additionally an amorphous-to-crystalline transition for Mo must be avoided in order maintain reasonably low roughness at the interfaces. This transition is well within the range of thicknesses pertinent to this study. Despite these difficulties our data demonstrates that we achieved reasonably flat ML response across the angular acceptance of ± 0.05°, with an experimentally confirmed average reflectivity of 28%. Such a ML prescription is well suited for applications in the field of hard x-ray imaging of highly diverging sources. PMID:27505826

  19. The electrochemically assisted synthesis of ZnSiP 2

    NASA Astrophysics Data System (ADS)

    McManis, G. E.; Covino, J.

    1987-03-01

    Efforts directed toward the electrochemical synthesis of the ternary chalcopyrite ZnSiP 2 are discussed. In all cases reported here, the zinc source was a molten zinc cathode. Electrolysis current densities and temperatures are found to be important variables in determining whether the predominant products are ternary or binary phosphides. The binary phosphides are formed at temperatures below the boiling point of the zinc cathode (906°C). Above 1000°C, transport of zinc and silicon sources occurs readily. In the atmosphere of nearly pure elemental phosphorus maintained by the electrochemical reduction of the phosphorous source onto the cathode, the ternary phosphide is formed by the direct combination of the elements on the walls of the cell. The chemical nature of the silicon source is also found to be a critical factor influencing the formation, purity, and silicon content of the ternary phosphides. Silicon sources studied included: Mg 2Si, Na 2SiF 6, and SiO 2. The characteristics of ZnSiP 2 samples prepared in this fashion using a variety of silicon sources are described.

  20. SI (Metric) handbook

    NASA Technical Reports Server (NTRS)

    Artusa, Elisa A.

    1994-01-01

    This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

  1. Fast SiPM Readout of the PANDA TOF Detector

    NASA Astrophysics Data System (ADS)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-05-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm3 SciTils read out by two single 3 × 3 mm2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  2. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    PubMed

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  3. Simultaneous presence of (Si3O10)8- and (Si2O7)6- groups in new synthetic mixed sorosilicates: BaY4(Si2O7)(Si3O10) and isotypic compounds, studied by single-crystal X-ray diffraction, Raman spectroscopy and DFT calculations

    NASA Astrophysics Data System (ADS)

    Wierzbicka-Wieczorek, Maria; Többens, Daniel M.; Kolitsch, Uwe; Tillmanns, Ekkehart

    2013-11-01

    Three new, isotypic silicate compounds, BaY4(Si2O7)(Si3O10), SrYb4(Si2O7)(Si3O10) and SrSc4(Si2O7)(Si3O10), were synthesized using high-temperature flux growth techniques, and their crystal structures were solved from single-crystal X-ray intensity data: monoclinic, P21/m, with a=5.532(1)/5.469(1)/5.278(1), b=19.734(4)/19.447(4)/19.221(4), c=6.868(1)/6.785(1)/6.562(1) Å, β=106.53(3)/106.20(3)/106.50(3)°, V=718.8(2)/693.0(2)/638.3(2) Å3, R(F)=0.0225/0.0204/0.0270, respectively. The topology of the novel structure type contains isolated horseshoe-shaped Si3O10 groups (Si-Si-Si=93.15-95.98°), Si2O7 groups (Si-Obridge-Si=180°, symmetry-restricted) and edge-sharing M(1)O6 and M(2)O6 octahedra. Single-crystal Raman spectra of the title compounds were measured and compared with Raman spectroscopic data of chemically and topologically related disilicates and trisilicates, including BaY2(Si3O10) and SrY2(Si3O10). The band assignments are supported by additional theoretical calculation of Raman vibrations by DFT methods.

  4. Actinide-Catalyzed Intermolecular Addition of Alcohols to Carbodiimides.

    PubMed

    Batrice, Rami J; Kefalidis, Christos E; Maron, Laurent; Eisen, Moris S

    2016-02-24

    The unprecedented actinide-catalyzed addition of alcohols to carbodiimides is presented. This represents a rare example of thorium-catalyzed transformations of an alcoholic substrate and the first example of uranium complexes showing catalytic reactivity with alcohols. Using the uranium and thorium amides U[N(SiMe3)2]3 and [(Me3Si)2N]2An[κ(2)-(N,C)-CH2Si(CH3)2N(SiMe3)] (An = Th or U), alcohol additions to unsaturated carbon-nitrogen bonds are achieved in short reaction times with excellent selectivities and high to excellent yields. Computational studies, supported by experimental thermodynamic data, suggest plausible models of the profile of the reaction which allow the system to overcome the high barrier of scission of the actinide-oxygen bond. Accompanied by experimentally determined kinetic parameters, a plausible mechanism is proposed for the catalytic cycle. PMID:26844823

  5. Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

    NASA Astrophysics Data System (ADS)

    Pippel, Eckhard; Woltersdorf, Jörg; Ólafsson, Halldor Ö.; Sveinbjörnsson, Einar Ö.

    2005-02-01

    We report on electrical and microscopic investigations aimed to clarify the origin of near-interface traps (NITs) in metal-silicon dioxide-4H-silicon carbide structures. Using capacitance-voltage and thermal dielectric relaxation current (TDRC) analysis we investigated NITs close to the 4H-SiC conduction-band edge in differently prepared thermal and deposited oxides and found that the traps give rise to two characteristic TDRC signatures belonging to two groups of trap levels. The total trapped charge exceeds 1×1013cm-2. The observed density and energy distribution of these traps are nearly identical in all thermal and deposited oxides investigated, suggesting that the NITs belong to intrinsic defects at the SiO2/SiC interface which are readily formed during oxide deposition or thermal oxidation of 4H-SiC. Using high-resolution electron microscopy combined with nanochemical analysis (electron energy-loss near-edge spectroscopy and energy-filtered transmission electron microscopy) we investigated the SiO2/SiC interface in samples receiving reoxidation and did not find any indication of graphitic regions at or near the SiO2/SiC interface or in the bulk silicon dioxide within a detection limit of 0.7nm. In addition, no amorphous carbon accumulation was observed near the SiO2/SiC interface. The overall results strongly suggest that the NITs near the 4H-SiC conduction band are not related to carbon structures in the SiO2/SiC interlayer.

  6. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

    PubMed

    Hu, Yongjie; Xiang, Jie; Liang, Gengchiau; Yan, Hao; Lieber, Charles M

    2008-03-01

    Ge/Si core/shell nanowires (NWs) are attractive and flexible building blocks for nanoelectronics ranging from field-effect transistors (FETs) to low-temperature quantum devices. Here we report the first studies of the size-dependent performance limits of Ge/Si NWFETs in the sub-100 nm channel length regime. Metallic nanoscale electrical contacts were made and used to define sub-100 nm Ge/Si channels by controlled solid-state conversion of Ge/Si NWs to NiSixGe y alloys. Electrical transport measurements and modeling studies demonstrate that the nanoscale metallic contacts overcome deleterious short-channel effects present in lithographically defined sub-100 nm channels. Data acquired on 70 and 40 nm channel length Ge/Si NWFETs with a drain-source bias of 0.5 V yield transconductance values of 78 and 91 microS, respectively, and maximum on-currents of 121 and 152 microA. The scaled transconductance and on-current values for a gate and bias voltage window of 0.5 V were 6.2 mS/microm and 2.1 mA/microm, respectively, for the 40 nm device and exceed the best reported values for planar Si and NW p-type FETs. In addition, analysis of the intrinsic switching delay shows that terahertz intrinsic operation speed is possible when channel length is reduced to 70 nm and that an intrinsic delay of 0.5 ps is achievable in our 40 nm device. Comparison of the experimental data with simulations based on a semiclassical, ballistic transport model suggests that these sub-100 nm Ge/Si NWFETs with integrated high-kappa gate dielectric operate near the ballistic limit. PMID:18251518

  7. Bioprocessing of “Hair Waste” by Paecilomyces lilacinus as a Source of a Bleach-Stable, Alkaline, and Thermostable Keratinase with Potential Application as a Laundry Detergent Additive: Characterization and Wash Performance Analysis

    PubMed Central

    Cavello, Ivana A.; Hours, Roque A.; Cavalitto, Sebastián F.

    2012-01-01

    Paecilomyces lilacinus (Thom) Samson LPS 876, a locally isolated fungal strain, was grown on minimal mineral medium containing “hair waste,” a residue from the hair-saving unhairing process, and produced a protease with keratinolytic activity. This enzyme was biochemically characterized. The optimum reaction conditions, determined with a response surface methodology, were 60°C and pH 6.0. It was remarkably stable in a wide range of pHs and temperatures. Addition of Ca2+, Mg2+, or sorbitol was found to be effective in increasing thermal stability of the protease. PMSF and Hg2+ inhibited the proteolytic activity indicating the presence of a thiol-dependent serine protease. It showed high stability toward surfactants, bleaching agents, and solvents. It was also compatible with commercial detergents (7 mg/mL) such as Ariel, Skip, Drive, and Ace, retaining more than 70% of its proteolytic activity in all detergents after 1 h of incubation at 40°C. Wash performance analysis revealed that this protease could effectively remove blood stains. From these properties, this enzyme may be considered as a potential candidate for future use in biotechnological processes, as well as in the formulation of laundry detergents. PMID:23365760

  8. Bioprocessing of "Hair Waste" by Paecilomyces lilacinus as a Source of a Bleach-Stable, Alkaline, and Thermostable Keratinase with Potential Application as a Laundry Detergent Additive: Characterization and Wash Performance Analysis.

    PubMed

    Cavello, Ivana A; Hours, Roque A; Cavalitto, Sebastián F

    2012-01-01

    Paecilomyces lilacinus (Thom) Samson LPS 876, a locally isolated fungal strain, was grown on minimal mineral medium containing "hair waste," a residue from the hair-saving unhairing process, and produced a protease with keratinolytic activity. This enzyme was biochemically characterized. The optimum reaction conditions, determined with a response surface methodology, were 60°C and pH 6.0. It was remarkably stable in a wide range of pHs and temperatures. Addition of Ca(2+), Mg(2+), or sorbitol was found to be effective in increasing thermal stability of the protease. PMSF and Hg(2+) inhibited the proteolytic activity indicating the presence of a thiol-dependent serine protease. It showed high stability toward surfactants, bleaching agents, and solvents. It was also compatible with commercial detergents (7 mg/mL) such as Ariel, Skip, Drive, and Ace, retaining more than 70% of its proteolytic activity in all detergents after 1 h of incubation at 40°C. Wash performance analysis revealed that this protease could effectively remove blood stains. From these properties, this enzyme may be considered as a potential candidate for future use in biotechnological processes, as well as in the formulation of laundry detergents.

  9. Bioprocessing of "Hair Waste" by Paecilomyces lilacinus as a Source of a Bleach-Stable, Alkaline, and Thermostable Keratinase with Potential Application as a Laundry Detergent Additive: Characterization and Wash Performance Analysis.

    PubMed

    Cavello, Ivana A; Hours, Roque A; Cavalitto, Sebastián F

    2012-01-01

    Paecilomyces lilacinus (Thom) Samson LPS 876, a locally isolated fungal strain, was grown on minimal mineral medium containing "hair waste," a residue from the hair-saving unhairing process, and produced a protease with keratinolytic activity. This enzyme was biochemically characterized. The optimum reaction conditions, determined with a response surface methodology, were 60°C and pH 6.0. It was remarkably stable in a wide range of pHs and temperatures. Addition of Ca(2+), Mg(2+), or sorbitol was found to be effective in increasing thermal stability of the protease. PMSF and Hg(2+) inhibited the proteolytic activity indicating the presence of a thiol-dependent serine protease. It showed high stability toward surfactants, bleaching agents, and solvents. It was also compatible with commercial detergents (7 mg/mL) such as Ariel, Skip, Drive, and Ace, retaining more than 70% of its proteolytic activity in all detergents after 1 h of incubation at 40°C. Wash performance analysis revealed that this protease could effectively remove blood stains. From these properties, this enzyme may be considered as a potential candidate for future use in biotechnological processes, as well as in the formulation of laundry detergents. PMID:23365760

  10. Towards Large Area Growth of 3C-SiC

    SciTech Connect

    Vasiliauskas, Remigijus; Liljedahl, Rickard; Syvaejaervi, Mikael; Yakimova, Rositza

    2010-11-01

    In this work we have analyzed the possibility of upscaling the growth of 3C-SiC. The growth was done at different temperatures to find limiting mechanisms of the growth rate and to examine the morphology of grown layers. Coverage by 3C-SiC increases when increasing temperature, however more twins appeared. Activation energy of the growth is 130 kcal/mol--showing that growth rate limiting mechanism is sublimation of the source. We discuss the influence of large area 6H-SiC wafers on the formation of 3C-SiC, in which the change in basal plane orientation could also influence the growth of 3C-SiC.

  11. Room Temperature Creep Of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Gyekenyesi, Andrew; Levine, Stanley (Technical Monitor)

    2001-01-01

    During a recent experimental study, time dependent deformation was observed for a damaged Hi-Nicalon reinforced, BN interphase, chemically vapor infiltrated SiC matrix composites subjected to static loading at room temperature. The static load curves resembled primary creep curves. In addition, acoustic emission was monitored during the test and significant AE activity was recorded while maintaining a constant load, which suggested matrix cracking or interfacial sliding. For similar composites with carbon interphases, little or no time dependent deformation was observed. Evidently, exposure of the BN interphase to the ambient environment resulted in a reduction in the interfacial mechanical properties, i.e. interfacial shear strength and/or debond energy. These results were in qualitative agreement with observations made by Eldridge of a reduction in interfacial shear stress with time at room temperature as measured by fiber push-in experiments.

  12. Low thermal budget for Si and SiGe surface preparation for FD-SOI technology

    NASA Astrophysics Data System (ADS)

    Labrot, M.; Cheynis, F.; Barge, D.; Müller, P.; Juhel, M.

    2016-05-01

    Ultra thin Silicon films of Silicon-on-Insulator technology are metastable and thus cannot be submitted to high temperature treatments that may roughen or disrupt the film during the set of technological steps required for device fabrication. This paper concerns the development of an efficient low temperature cleaning process of Si and SiGe surfaces that enables a subsequent good-quality epitaxy of raised source and drain. For this purpose wet-clean, plasma-clean and several combinations of both are used. We thus propose two effective surface cleaning processes with low thermal budget optimized for FD-SOI technology.

  13. High performance amorphous-Si@SiOx/C composite anode materials for Li-ion batteries derived from ball-milling and in situ carbonization

    NASA Astrophysics Data System (ADS)

    Wang, Dingsheng; Gao, Mingxia; Pan, Hongge; Wang, Junhua; Liu, Yongfeng

    2014-06-01

    Amorphous-Si@SiOx/C composites with amorphous Si particles as core and coated with a double layer of SiOx and carbon are prepared by ball-milling crystal micron-sized silicon powders and carbonization of the citric acid intruded in the ball-milled Si. Different ratios of Si to citric acid are used in order to optimize the electrochemical performance. It is found that SiOx exists naturally at the surfaces of raw Si particles and its content increases to ca. 24 wt.% after ball-milling. With an optimized Si to citric acid weight ratio of 1/2.5, corresponding to 8.4 wt.% C in the composite, a thin carbon layer is coated on the surfaces of a-Si@SiOx particles, moreover, floc-like carbon also forms and connects the carbon coated a-Si@SiOx particles. The composite provides a capacity of 1450 mA h g-1 after 100 cycles at a current density of 100 mA g1, and a capacity of 1230 mA h g-1 after 100 cycles at 500 mA g1 as anode material for lithium-ion batteries. Effects of ball-milling and the addition of citric acid on the microstructure and electrochemical properties of the composites are revealed and the mechanism of the improvement in electrochemical properties is discussed.

  14. X-ray Rietveld refinement of structure of Ba-deficient Ba3Si6O12N2:Eu phosphor

    NASA Astrophysics Data System (ADS)

    Moriga, Toshihiro; Fujigaki, Hiroshi; Ogita, Yuma; Muguruma, Issei; Bando, Fumika; Murai, Kei-Ichiro; Waterhouse, Geoffrey I. N.

    2015-03-01

    Green oxynitride phosphors Ba3Si6O12N2 were prepared with metallic ratio of Si/Ba = 3. It was found that the nonstoichiometric mixture at Si/Ba = 3 formed the Ba3Si6O12N2-type phase easier than the stoichiometric one at Si/Ba = 2 after it was fired at 1200°C for 5 h under a diluted hydrogen flow (5%H2-95%N2). The excess Si source led to a formation of SiO2 glass, which can act as a flux in case of formation of Ba3Si6O12N2.

  15. The Effect of Silicon and Aluminum Additions on the Oxidation Resistance of Lean Chromium Stainless Steels

    SciTech Connect

    Dunning, J.S.; Alman, D.E.; Rawers, J.C.

    2001-09-01

    The effect of Si and Al additions on the oxidation of lean chromium austenitic stainless steels has been studied. A baseline composition of Fe-16Cr-16Ni-2Mn-1Mo was selected to allow combined Si and Al additions of up to 5 wt. pct. in a fully austenitic alloy. The baseline composition was selected using a net Cr equivalent equation to predict the onset of G-ferrite formation in austenite. Cyclic oxidation tests in air for 1000 hours were carried out on alloys with Si only or combined Si and Al additions in the temperature range 700 C to 800 C. Oxidation resistance of alloys with Si only additions were outstanding, particularly at 800 C. It was evident that different rate controlling mechanisms for oxidation were operative at 700 C and 800 C in the Si alloys. In addition, Si alloys pre-oxidized at 800 C, showed a zero weight gain in subsequent testing for 1000 hours at 700 C. The rate controlling mechanism in alloys with combined Si and Al addition for oxidation at 800 C was also different than alloys with Si only. SEM and ESCA analysis of the oxide films and base material at the oxide/base metal interface were conducted to study potential rate controlling mechanisms.

  16. Clinical effects of sulphite additives.

    PubMed

    Vally, H; Misso, N L A; Madan, V

    2009-11-01

    Sulphites are widely used as preservative and antioxidant additives in the food and pharmaceutical industries. Topical, oral or parenteral exposure to sulphites has been reported to induce a range of adverse clinical effects in sensitive individuals, ranging from dermatitis, urticaria, flushing, hypotension, abdominal pain and diarrhoea to life-threatening anaphylactic and asthmatic reactions. Exposure to the sulphites arises mainly from the consumption of foods and drinks that contain these additives; however, exposure may also occur through the use of pharmaceutical products, as well as in occupational settings. While contact sensitivity to sulphite additives in topical medications is increasingly being recognized, skin reactions also occur after ingestion of or parenteral exposure to sulphites. Most studies report a 3-10% prevalence of sulphite sensitivity among asthmatic subjects following ingestion of these additives. However, the severity of these reactions varies, and steroid-dependent asthmatics, those with marked airway hyperresponsiveness, and children with chronic asthma, appear to be at greater risk. In addition to episodic and acute symptoms, sulphites may also contribute to chronic skin and respiratory symptoms. To date, the mechanisms underlying sulphite sensitivity remain unclear, although a number of potential mechanisms have been proposed. Physicians should be aware of the range of clinical manifestations of sulphite sensitivity, as well as the potential sources of exposure. Minor modifications to diet or behaviour lead to excellent clinical outcomes for sulphite-sensitive individuals.

  17. [Temperature-Dependent Photoluminescence Property Studies of SiN(x) Films with nc-Si].

    PubMed

    Liu, Jian-ping; Zheng, Yan; Liu, Hai-xu; Yu, Wei; Ding, Wen-ge; Lai, Wei-dong

    2016-03-01

    Silicon nitride (SiN(x)) films containing nanocrystalline silicon (nc-Si) were deposited on crystalline silicon substrate by facing-target sputtering technique. Thermal annealing process was performed at 450 degrees C for 50 min in a conventional furnace under FG(10% H2, 90% N2) ambient. The photoluminescece (PL) properties of the SiN(x) films with nc-Si were investigated by steady/transient PL spectra measurements by Fluorescence spectrometer with different temperatures. The PL processes could be attributed to the quantum confinement effect of nc-Si and the defects in the film. The PL peak position exhibits a small blue shift with the increasing of the excitation energy, which indicates that the PL portion of the nc-Si increased with smaller size. In addition, the PL lifetime increases and the PL intensity exhibits exponential increase as a result of the decreased temperature which supressed the nonradiative recombination process and then improved the radiative recombination. The PL lifetime of the film significantly reduces with the decreasing of the detection wavelength, which indicates that the PL process related to the the quantum confinement effect strongly depends on temperature. PMID:27400499

  18. Changes in Precipitation Sources over Glacial/Interglacial MIS 11 and 12 Examined by Δ17O of SiO2 Obtained from Diatoms along the Valles Caldera Lake Core, NM

    NASA Astrophysics Data System (ADS)

    Gibbons, J.; Sharp, Z. D.; Fawcett, P. J.

    2015-12-01

    Quantitative estimates of the isotopic composition of paleo-lake water have been made using 18O/16O (ẟ18O) in diatom silica (Dodd and Sharp, GCA, 2010). Post-mortem diatom silica equilibrates with ambient lake water within six months, chronicling the bulk oxygen isotope composition of the lake and resulting in silica that is near the quartz-water fractionation line (Dodd et al, GGG, 2012). The δ18O values of lacustrine diatoms from the Valles Caldera, NM, vary by ~25‰ between glacial and interglacial periods and suggest a collapse of the summer monsoon that currently provides 50% of the modern precipitation in NM. Triple oxygen isotope measurements of diatom silica may serve as a proxy for the isotopic composition of the lake water and as an estimate of paleo-humidity over the precipitation source. The deuterium excess parameter (d= ẟD - 8 ẟ18O) has been used along ice cores as a source relative humidity index, but is difficult to make in lake sediments. Instead, high precision 17O-excess (∆17O) measurements (=ẟ17O - 0.528 ẟ18O) may provide paleo-humidity information. Landais et al. (GRL, 2008) found a ∆17O difference of 0.02‰ in the Vostok ice core between glacial and interglacial times, interpreted as a function of changing relative humidity of the precipitation source. A 0.03‰ change was observed in glacial (∆17O=-0.22‰) and interglacial (∆17O=-0.19‰) diatom silica along the Valles Caldera lake core. Further information regarding the δ18O value of meteoric water can be calculated from paired δ18O-δ17O measurements. The combined δ18O-δ17O values of interglacial diatoms suggest a δ18Ometeoric water value of -9‰. Modern δ18O value of monsoonal precipitation in NM is ~-10‰. The δ18O of glacial diatoms suggest a δ18Ometeoric water = -20‰. Modern δ18O value of winter precipitation in NM is ~-20‰. These results suggest that the seasonality of precipitation in New Mexico can be inferred based on changes in the relative

  19. Thermal decomposition of silane to form hydrogenated amorphous Si film

    DOEpatents

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  20. Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

    PubMed Central

    Yamasaka, Shuto; Nakamura, Yoshiaki; Ueda, Tomohiro; Takeuchi, Shotaro; Sakai, Akira

    2015-01-01

    Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal conductivities than those of the conventional nanostructured SiGe bulk alloys, despite the stacked structures having a smaller Ge fraction. This came from the large thermal resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon scattering can be controlled by the Ge ND structure, which was independent of Si layer structure for carrier transport. These results demonstrate the effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources, opening up a route for the realisation of Si-based thermoelectric materials. PMID:26434678

  1. Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

    NASA Astrophysics Data System (ADS)

    Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

    PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

  2. Deposition Of Pinhole-Free CoSi2 Film

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Fathauer, Robert N.; Grunthaner, Paula J.

    1989-01-01

    New fabrication method produces pinhole-free film of cobalt silicide on silicon substrate. In new method, cobalt and silicon evaporated from electron-beam sources onto substrate of silicon having <111> crystal orientation. Materials deposited in stoichiometric ratio of two silicon atoms to one of cobalt, yielding single-crystal CoSi2 film 5 to 10 nm thick. Layer of amorphous silicon 1 to 2 nm thick deposited on CoSi2. Specimen then annealed at 550 degree C for 10 min. Absence of pinholes critical to operation of multilayer devices employing CoSi2 layers, such as metal base transistor.

  3. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  4. Effect of Fe- and Si-induced flaws on fracture of Si{sub 3}N{sub 4}

    SciTech Connect

    Singh, J.P.

    1997-10-01

    Fracture studies were performed to detect and assess the effect of flaws on the fracture behavior of hot-pressed Si{sub 3}N{sub 4} with Fe or Si inclusions. The addition of 5 and 0.5 wt.% Fe inclusions of 88--250 {micro}m size reduced the strength of Si{sub 3}N{sub 4} specimens by {approx} 40 and 15%, respectively. Similarly, addition of 1 and 0.5 wt.% Si inclusions of < 149 {micro}m size reduced the strength of Si{sub 3}N{sub 4} specimens by {approx} 50 and 39%, respectively. Fractography indicated that failure occurred primarily from internal flaws which included Fe- and Si-rich inclusions and/or regions of Si{sub 3}N{sub 4} matrix that were degraded as a result of reaction between Si{sub 3}N{sub 4} and molten Fe or Si. For inclusion-induced internal flaws, the critical flaw sizes calculated by fracture mechanics were always larger than the fractographically measured flaw sizes. This observation suggested local degradation in fracture toughness of the Si{sub 3}N{sub 4} matrix. A ratio, K, of {approx} 3.5--4.2 appeared to exist between the calculated and measured values of the critical internal flaw sizes of specimens that contained Fe inclusions. A similar ratio of 1.7--3.1 was observed for specimens that contained Si inclusions. The ratio K has important implications for strength predictions that are based on observed flaw size.

  5. Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method

    NASA Astrophysics Data System (ADS)

    Cai, Weili; Takenaka, Mitsuru; Takagi, Shinichi

    2014-03-01

    In this study, the application of the conductance method to bi-axially strained-Si (sSi) MOS capacitors on relaxed SiGe buffer layers is examined for evaluating the properties of sSi MOS interface states. It is found that the conventional conductance method does not work well for the characterization of SiO2/sSi MOS interfaces, because of additional parasitic admittance related to the sSi/SiGe hetero-interface. This additional parasitic admittance cannot be eliminated by the series resistance correction (SRC). A new equivalent circuit model for the SiO2/sSi interfaces, utilized in the conductance analysis, is proposed. The proposed model takes the sSi/SiGe hetero-interface parasitic admittance into account. By employing this new model and the analysis by a device simulator, physical parameters of the SiO2/sSi MOS interface states, generated by Fowler-Nordheim stress, are extracted. It is found that the introduced biaxial tensile strain does not strongly change the properties of SiO2/Si interface states.

  6. Polyimide processing additives

    NASA Technical Reports Server (NTRS)

    Fletcher, James C. (Inventor); Pratt, J. Richard (Inventor); St.clair, Terry L. (Inventor); Stoakley, Diane M. (Inventor); Burks, Harold D. (Inventor)

    1992-01-01

    A process for preparing polyimides having enhanced melt flow properties is described. The process consists of heating a mixture of a high molecular weight poly-(amic acid) or polyimide with a low molecular weight amic acid or imide additive in the range of 0.05 to 15 percent by weight of additive. The polyimide powders so obtained show improved processability, as evidenced by lower melt viscosity by capillary rheometry. Likewise, films prepared from mixtures of polymers with additives show improved processability with earlier onset of stretching by TMA.

  7. Polyimide processing additives

    NASA Technical Reports Server (NTRS)

    Pratt, J. Richard (Inventor); St.clair, Terry L. (Inventor); Stoakley, Diane M. (Inventor); Burks, Harold D. (Inventor)

    1993-01-01

    A process for preparing polyimides having enhanced melt flow properties is described. The process consists of heating a mixture of a high molecular weight poly-(amic acid) or polyimide with a low molecular weight amic acid or imide additive in the range of 0.05 to 15 percent by weight of the additive. The polyimide powders so obtained show improved processability, as evidenced by lower melt viscosity by capillary rheometry. Likewise, films prepared from mixtures of polymers with additives show improved processability with earlier onset of stretching by TMA.

  8. Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift

    SciTech Connect

    Zelenina, A. Hiller, D.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; Trouillet, V.; Bruns, M.; Mirabella, S.; Löper, P.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, C Estradé, S. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, C CCiT, Scientific and Technical Centers, Universitat de Barcelona, C and others

    2013-11-14

    Superlattices of Si{sub 3}N{sub 4} and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiN{sub x} layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si{sub 3}N{sub 4} matrix remains amorphous even after annealing at 1200 °C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO{sub 2} matrix. Also, a systematic peak shift was not found. The SiN{sub x}/Si{sub 3}N{sub 4} superlattices showed photoluminescence peak positions in the range of 540–660 nm (2.3–1.9 eV), thus quite similar to the bulk Si{sub 3}N{sub 4} film having peak position at 577 nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si{sub 3}N{sub 4} are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si{sub 3}N{sub 4} surrounding matrix luminescence.

  9. Additional Types of Neuropathy

    MedlinePlus

    ... A A Listen En Español Additional Types of Neuropathy Charcot's Joint Charcot's Joint, also called neuropathic arthropathy, ... can stop bone destruction and aid healing. Cranial Neuropathy Cranial neuropathy affects the 12 pairs of nerves ...

  10. Food Additives and Hyperkinesis

    ERIC Educational Resources Information Center

    Wender, Ester H.

    1977-01-01

    The hypothesis that food additives are causally associated with hyperkinesis and learning disabilities in children is reviewed, and available data are summarized. Available from: American Medical Association 535 North Dearborn Street Chicago, Illinois 60610. (JG)

  11. Smog control fuel additives

    SciTech Connect

    Lundby, W.

    1993-06-29

    A method is described of controlling, reducing or eliminating, ozone and related smog resulting from photochemical reactions between ozone and automotive or industrial gases comprising the addition of iodine or compounds of iodine to hydrocarbon-base fuels prior to or during combustion in an amount of about 1 part iodine per 240 to 10,000,000 parts fuel, by weight, to be accomplished by: (a) the addition of these inhibitors during or after the refining or manufacturing process of liquid fuels; (b) the production of these inhibitors for addition into fuel tanks, such as automotive or industrial tanks; or (c) the addition of these inhibitors into combustion chambers of equipment utilizing solid fuels for the purpose of reducing ozone.

  12. SiPMs characterization and selection for the DUNE far detector photon detection system

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Maricic, J.

    2016-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

  13. Reactions of Hydrogen with Si-SiO2 Interfaces

    NASA Astrophysics Data System (ADS)

    Rashkeev, S. N.; Pantelides, S. T.; Buczko, R.; Fleetwood, D. M.; Schrimpf, R. D.

    2001-03-01

    Two contrasting behaviors have been observed for H in Si-SiO2 structures: a) Radiation experiments established that H^+ released in SiO2 migrates to the Si-SiO2 interface where it induces new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H^+ can be cycled to and from the interface by reversing the oxide electric field. We report first-principles calculations that identify atomic-scale mechanisms for the two types of behavior and the conditions that are necessary for each. Si-Si bonds on the oxide side, i.e., ``suboxide bonds'', can trap H^+ in deep wells with asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposite Si-SiO2 interfaces if the density of suboxide bonds is high. This work was supported in part by AFOSR Grant F-49620-99-1-0289.

  14. Si in GaN -- On the nature of the background donor

    SciTech Connect

    Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W.

    1996-08-01

    A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

  15. Short-range order in amorphous SiO{sub x} by x ray photoelectron spectroscopy

    SciTech Connect

    Novikov, Yu. N.; Gritsenko, V. A.

    2011-07-01

    The Si 2p x ray photoelectron spectra of SiO{sub x} with a different composition of 0 {<=} x {<=} 2 have been studied experimentally and theoretically. The SiO{sub x} films were prepared by low-pressure chemical vapor deposition from SiH{sub 4} and N{sub 2}O source at 750 deg. C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiO{sub x}.

  16. Seismotectonics and Neotectonics of the Gulfs of Gökova-Kuşadasi-Siǧacik and Surrounding Regions (SW Turkey): Earthquake Mechanisms, Source Rupture Modeling, Tsunami Hazard and Geodynamic Implications

    NASA Astrophysics Data System (ADS)

    Yolsal-Cevikbilen, Seda; Karaoglu, Özgür; Taymaz, Tuncay; Helvaci, Cahit

    2013-04-01

    The mechanical behavior of the continental lithosphere for the Aegean region is one of the foremost interesting geological disputes in earth sciences. The Aegean region provides complex tectonic events which produced a strong heterogeneity in the crust (i.e. large thrusts and exhumation shear zones or extensional detachments) as such in among most continental regions. In order to investigate mechanical reasons of the ongoing lithospheric-scale extension within the region, we must tackle all of the existing kinematic and dynamic agents: (1) roll back of the subduction slab and back arc extension; (2) westward extrusion of the Anatolian micro-plate; (3) block rotations of the Aegean region and western Anatolia; and (4) transtensional transform faults. Furthermore, seismological studies, particularly earthquake source mechanisms and rupture modeling, play important roles on deciphering the ongoing deformation and seismotectonic characteristics of the region. Recently, many moderate earthquakes occurred in the Gulfs of Gökova, Kuşadası, Sıǧacık and surroundings. In the present study, we examined source mechanisms and rupture histories of those earthquakes with Mw > 5.0 in order to retrieve the geometry of active faulting, source characteristics, kinematic and dynamic source parameters and current deformations of the region by using teleseismic body-waveform inversion of long-period P- and SH-waves, and broad-band P-waveforms recorded by GDSN and FDSN stations. We also checked first motion polarities of P- waveforms recorded at regional and teleseismic stations and applied several uncertainty tests to find the error limits of minimum misfit solutions. Inversion results revealed E-W directed normal faulting mechanisms with small amount of left lateral strike slip components in the Gulf of Gökova and NE-SW oriented right lateral strike slip faulting mechanisms in the Gulf of Sıǧacık. Earthquakes mostly have N-S and NW-SE directed T- axes directions which are

  17. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    NASA Astrophysics Data System (ADS)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  18. Brazing SiC/SiC Composites to Metals

    NASA Technical Reports Server (NTRS)

    Steffier, Wayne S.

    2004-01-01

    Experiments have shown that active brazing alloys (ABAs) can be used to join SiC/SiC composite materials to metals, with bond strengths sufficient for some structural applications. The SiC/SiC composite coupons used in the experiments were made from polymerbased SiC fiber preforms that were chemical-vapor-infiltrated with SiC to form SiC matrices. Some of the metal coupons used in the experiments were made from 304 stainless steel; others were made from oxygen-free, high-conductivity copper. Three ABAs were chosen for the experiments: two were chosen randomly from among a number of ABAs that were on hand at the time; the third ABA was chosen because its titanium content (1.25 percent) is less than those of the other two ABAs (1.75 and 4.5 percent, respectively) and it was desired to evaluate the effect of reducing the titanium content, as described below. The characteristics of ABAs that are considered to be beneficial for the purpose of joining SiC/SiC to metal include wettability, reactivity, and adhesion to SiC-based ceramics. Prior to further development, it was verified that the three chosen ABAs have these characteristics. For each ABA, suitable vacuum brazing process conditions were established empirically by producing a series of (SiC/SiC)/ABA wetting samples. These samples were then sectioned and subjected to scanning electron microscopy (SEM) and energy-dispersive x-ray spectrometry (EDS) for analysis of their microstructures and compositions. Specimens for destructive mechanical tests were fabricated by brazing of lap joints between SiC/SiC coupons 1/8-in. (.3.2- mm) thick and, variously, stainless steel or copper tabs. The results of destructive mechanical tests and the SEM/EDS analysis were used to guide the development of a viable method of brazing the affected materials.

  19. Microstructural development to toughen SiC

    SciTech Connect

    Moberlychan, W.J.; Cannon, R.M.; Chan, L.H.; Cao, J.J.; Gilbert, C.J.; Ritchie, R.O.; De Jonghe, L.C.

    1996-12-31

    SiC offers a promise for high strength applications at high temperature; however, poor fracture resistance has inhibited its utility. Recent developments to control microstructure during hot pressing have improved fracture toughness > 3 fold, while also improving strength 50% above that of a commercial SiC, Hexoloy. This ABC-SiC (designated for the Al, B, and C additives) utilizes liquid phase sintering to obtain full densification at 1,650 C, and to induce the {beta}-3C to {alpha}-4H phase transformation below 1,900 C. Interlocking, plate-like, {alpha} grains, coupled with a thin ({approximately}1 nm) amorphous layer, provide for tortuous intergranular fracture and high toughness. This study focuses on the developing microstructure; how the {alpha}-4H polytype grow as a stacking modification of the {beta}-3C grains, and how amorphous grain boundaries and crystalline triple point phases develop and interact with the crack geometry. HR-TEM and Image-Filtered EELS characterize the amorphous grain boundaries. Field Emission-SEM, EDS and Auger Electron Spectroscopy characterize the fracture morphology and the chemistry of grain boundaries and triple points. Electron Diffraction and HR-TEM depict an epitaxial relationship between triple point phases (Al{sub 8}B{sub 4}C{sub 7} and Al{sub 4}O{sub 4}C) and matrix {alpha}-SiC grains, the development of which affects the mechanical toughening. The transformation to toughen SiC is compared to the well-studied transformation processing in Si{sub 3}N{sub 4}. A distinct advantage is the interlocked nature of the plate-like grains, which causes strong elastic bridging behind the crack tip.

  20. Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes

    SciTech Connect

    FLEMING,JAMES G.; CHOW,KAI-CHEUNG; LIN,SHAWN-YU

    2000-04-06

    Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

  1. Additive Manufacturing Infrared Inspection

    NASA Technical Reports Server (NTRS)

    Gaddy, Darrell

    2014-01-01

    Additive manufacturing is a rapid prototyping technology that allows parts to be built in a series of thin layers from plastic, ceramics, and metallics. Metallic additive manufacturing is an emerging form of rapid prototyping that allows complex structures to be built using various metallic powders. Significant time and cost savings have also been observed using the metallic additive manufacturing compared with traditional techniques. Development of the metallic additive manufacturing technology has advanced significantly over the last decade, although many of the techniques to inspect parts made from these processes have not advanced significantly or have limitations. Several external geometry inspection techniques exist such as Coordinate Measurement Machines (CMM), Laser Scanners, Structured Light Scanning Systems, or even traditional calipers and gages. All of the aforementioned techniques are limited to external geometry and contours or must use a contact probe to inspect limited internal dimensions. This presentation will document the development of a process for real-time dimensional inspection technique and digital quality record of the additive manufacturing process using Infrared camera imaging and processing techniques.

  2. The morphology of ceramic phases in B {sub x} C-SiC-Si infiltrated composites

    SciTech Connect

    Hayun, S.; Frage, N. . E-mail: nfrage@bgu.ac.il; Dariel, M.P.

    2006-09-15

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B{sub 4}C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains.

  3. Two dimensional epitaxial graphene - SiC/SiOx field effect transistors

    NASA Astrophysics Data System (ADS)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Berger, Claire; de Heer, Walter; Institute of Physics, Charles University in Prague, Czech Republic Collaboration; Institute Néel, Cnrs, Grenoble, France Collaboration; Georia Institute of Technology Team

    2014-03-01

    We have produced and measured two dimensional (2D) field effect transistors composed of graphene source and drain and a 2D SiC/SiOx channel supplied with a top gate. The devices have been measured in a wide range of gate voltages and temperatures. Careful attention was focused on the SiC/SiOx channel formation and graphitization conditions. The channel was characterized by XPS, LEED, atomic and electrostatic force microscopy and Raman spectroscopy. On to off current ratios up to 106 have been achieved and sub-threshold swings up to 200 mV/decade have been attained with on-state currents in the sub-miliamp range. The channel formation as well as graphene/SiC junction including charge transfer in the graphene are modeled solving the coupled Poisson equation and Schrödinger equation in the effective mass approximation. The standard models of Metal Induced Gap States (MIGS) and Charge Neutrality Level concepts successfully reproduce the experimental data. The combined contributions of the space charge limited current in the channel and back-to-back Schottky diodes at the channel junctions are discussed. The thermionic and tunneling nature of the barriers is analyzed in these quasi two dimensional devices.

  4. Phenylethynyl Containing Reactive Additives

    NASA Technical Reports Server (NTRS)

    Connell, John W. (Inventor); Smith, Joseph G., Jr. (Inventor); Hergenrother, Paul M. (Inventor)

    2002-01-01

    Phenylethynyl containing reactive additives were prepared from aromatic diamine, containing phenylethvnvl groups and various ratios of phthalic anhydride and 4-phenylethynviphthalic anhydride in glacial acetic acid to form the imide in one step or in N-methyl-2-pvrrolidinone to form the amide acid intermediate. The reactive additives were mixed in various amounts (10% to 90%) with oligomers containing either terminal or pendent phenylethynyl groups (or both) to reduce the melt viscosity and thereby enhance processability. Upon thermal cure, the additives react and become chemically incorporated into the matrix and effect an increase in crosslink density relative to that of the host resin. This resultant increase in crosslink density has advantageous consequences on the cured resin properties such as higher glass transition temperature and higher modulus as compared to that of the host resin.

  5. Thermoelectric Properties of n-Type Si0,8Ge0,2-FeSi2 Multiphase Nanostructures

    NASA Astrophysics Data System (ADS)

    Usenko, Andrey; Moskovskikh, Dmitry; Korotitskiy, Andrey; Gorshenkov, Mikhail; Voronin, Andrey; Arkhipov, Dmitry; Lyange, Maria; Isachenko, Grigory; Khovaylo, Vladimir

    2016-07-01

    We report on thermoelectric properties of n-type nanostructured bulk Si0.8Ge0.2 with the addition of FeSi2 prepared via two sintering routes: the conventional spark plasma sintering method and a direct current pressing technique. The thermal conductivity, the electrical conductivity, and the Seebeck coefficient have been determined over the temperature range from 25°C to 900°C in a helium atmosphere. The highest ZT value for the multiphase nanostructured composite was reached at ˜0.6 at 900°C. Embedding of 10 at.% FeSi2 phase had a positive impact on thermal properties but dramatically affected the power factor, which eventually resulted in a drop of the thermoelectric efficiency. It was also shown that the orthorhombic β-FeSi2 phase transforms to a tetragonal α-FeSi2 phase during high temperature sintering.

  6. Structural and optical characterization of pure Si-rich nitride thin films

    PubMed Central

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase. PMID:23324447

  7. Correlation between microstructure evolution and high temperature properties of TiAlSiN hard coatings with different Si and Al content

    NASA Astrophysics Data System (ADS)

    Chen, Tian; Xie, Zhiwen; Gong, Feng; Luo, Zhuangzhu; Yang, Zhi

    2014-09-01

    TiAlSiN coatings with different Si and Al content are synthesized by multi-plasma immersion ion implantation and deposition (MPIIID). The microstructure, oxidation resistance and wear resistance of as-deposited coatings are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), nano-indentation, thermo gravimetric analysis (TGA) and friction tests. Studies show that TiAlSiN coating has nc-TiAlN/a-Si3N4 structure. The grain size of nc-TiAlN decreases gradually and the volume fraction of the interfacial a-Si3N4 increases with the increased Si level. The obvious reduction in grain size together with the increase in interfacial a-Si3N4 eventually leads to the superior oxidation resistance of TiAlSiN coating. In addition, TiAlSiN coating with low Si and Al content exhibits poor oxidation stability and thermal stability, which results in its unsatisfied wear resistance at 800 ̊C. However, TiAlSiN coating with higher Si and Al content possesses better oxidation stability and thermal stability, and this coating shows excellent wear resistance both at RT and 800 ̊C. The correlation between microstructure evolution and oxidation resistance and wear resistance of as-deposited coatings are systematically discussed.

  8. 17 CFR 38.1201 - Additional sources for compliance.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... designing a futures contract, the designated contract market should conduct market research so that the... contract markets should derive a quantitative estimate of the deliverable supplies for the delivery...

  9. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    .../cfr/. Final opinions made in the adjudication of cases are published in “Nuclear Regulatory Commission... public inspection and copying for a fee at the NRC Public Document Room, One White Flint North,...

  10. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    .../cfr/. Final opinions made in the adjudication of cases are published in “Nuclear Regulatory Commission... public inspection and copying for a fee at the NRC Public Document Room, One White Flint North,...

  11. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    .../cfr/. Final opinions made in the adjudication of cases are published in “Nuclear Regulatory Commission... public inspection and copying for a fee at the NRC Public Document Room, One White Flint North,...

  12. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    .../cfr/. Final opinions made in the adjudication of cases are published in “Nuclear Regulatory Commission... public inspection and copying for a fee at the NRC Public Document Room, One White Flint North,...

  13. 10 CFR 1.3 - Sources of additional information.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    .../cfr/. Final opinions made in the adjudication of cases are published in “Nuclear Regulatory Commission... public inspection and copying for a fee at the NRC Public Document Room, One White Flint North,...

  14. TLSpy: An Open-Source Addition to Terrestrial Lidar Workflows

    NASA Astrophysics Data System (ADS)

    Frechette, J. D.; Weissmann, G. S.; Wawrzyniec, T. F.

    2008-12-01

    Terrestrial lidar scanners (TLS) that capture three dimensional (3D) geometry with cm scale precision present many new opportunities in the Earth Sciences and related fields. However, the lack of domain specific tools impedes full and efficient utilization of the information contained in these datasets. Most processing and analysis is performed using a variety of manufacturing, surveying, airborne lidar, and GIS software. Although much overlap exists, inevitably some needs are not addressed by these applications. TLSpy provides a plugin driven framework with 3D visualization capabilities that encourages researchers to fill these gaps. The goal is to free researchers from the intellectual overhead imposed by user and data interface design, enabling rapid development of TLS specific processing and analysis algorithms. We present two plugins as examples of problems that TLSpy is being applied to. The first plugin corrects for the strong influence of target orientation on TLS measured reflectance intensities. It calculates the distribution of incidence angles and intensities in an input scan and assists the user in fitting a reflectance model to the distribution. The model is then used to normalize input intensities, minimizing the impact of surface orientation and simplifying the extraction of quantitative data from reflectance measurements. Although reasonable default models can be determined the large number of factors influencing reflectance values require that the plugin be designed for maximum flexibility, allowing the user to adjust all model parameters and define new reflectance models as needed. The second plugin helps eliminate multipath reflections from water surfaces. Characterized by a lower intensity mirror image of the subaerial bank appearing below the water surface, these reflections are a common problem in scans containing water. These erroneous reflections can be removed by manually selecting points that lie on the waterline, fitting a plane to the points, and deleting points below that plane. This plugin simplifies the process by automatically identifying waterline points using characteristic changes in geometry and intensity. Automatic identification is often faster and more reliable than manual identification, however, manual control is retained as a fallback for degenerate cases.

  15. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}–embedded Si nanocrystals

    SciTech Connect

    Hiller, D. Zelenina, A.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B.; Estradé, S.; Schnabel, M.; Weiss, C.; Janz, S.

    2014-05-28

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  16. Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

    NASA Astrophysics Data System (ADS)

    Nishino, Katsushi; Nakauchi, Jun; Hayashi, Kotaro; Tsukihara, Masashi

    2013-08-01

    AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.

  17. Porous silicon microparticles for delivery of siRNA therapeutics.

    PubMed

    Shen, Jianliang; Wu, Xiaoyan; Lee, Yeonju; Wolfram, Joy; Yang, Zhizhou; Mao, Zong-Wan; Ferrari, Mauro; Shen, Haifa

    2015-01-15

    Small interfering RNA (siRNA) can be used to suppress gene expression, thereby providing a new avenue for the treatment of various diseases. However, the successful implementation of siRNA therapy requires the use of delivery platforms that can overcome the major challenges of siRNA delivery, such as enzymatic degradation, low intracellular uptake and lysosomal entrapment. Here, a protocol for the preparation and use of a biocompatible and effective siRNA delivery system is presented. This platform consists of polyethylenimine (PEI) and arginine (Arg)-grafted porous silicon microparticles, which can be loaded with siRNA by performing a simple mixing step. The silicon particles are gradually degraded over time, thereby triggering the formation of Arg-PEI/siRNA nanoparticles. This delivery vehicle provides a means for protecting and internalizing siRNA, without causing cytotoxicity. The major steps of polycation functionalization, particle characterization, and siRNA loading are outlined in detail. In addition, the procedures for determining particle uptake, cytotoxicity, and transfection efficacy are also described.

  18. Multifunctional fuel additives

    SciTech Connect

    Baillargeon, D.J.; Cardis, A.B.; Heck, D.B.

    1991-03-26

    This paper discusses a composition comprising a major amount of a liquid hydrocarbyl fuel and a minor low-temperature flow properties improving amount of an additive product of the reaction of a suitable diol and product of a benzophenone tetracarboxylic dianhydride and a long-chain hydrocarbyl aminoalcohol.

  19. Biobased lubricant additives

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Fully biobased lubricants are those formulated using all biobased ingredients, i.e. biobased base oils and biobased additives. Such formulations provide the maximum environmental, safety, and economic benefits expected from a biobased product. Currently, there are a number of biobased base oils that...

  20. Si Isotopic Ratios in Mainstream Presolar SIC Grains Revisited

    NASA Astrophysics Data System (ADS)

    Lugaro, Maria; Zinner, Ernst; Gallino, Roberto; Amari, Sachiko

    1999-12-01

    Although mainstream SiC grains, the major group of presolar SiC grains found in meteorites, are believed to have originated in the expanding envelope of asymptotic giant branch (AGB) stars during their late carbon-rich phases, their Si isotopic ratios show a distribution that cannot be explained by nucleosynthesis in this kind of star. Previously, this distribution has been interpreted to be the result of contributions from many AGB stars of different ages whose initial Si isotopic ratios vary owing to the Galactic chemical evolution of the Si isotopes. This paper presents a new interpretation based on local heterogeneities of the Si isotopes in the interstellar medium at the time the parent stars of the mainstream grains were born. Recently, several authors have presented inhomogeneous chemical evolution models of the Galactic disk in order to account for the well-known evidence that F and G dwarfs of similar age show an intrinsic scatter in their elemental abundances. First we report new calculations of the s-process nucleosynthesis of the Si and Ti isotopes in four AGB models (1.5, 3, and 5 Msolar with Z=0.02; 3 Msolar with Z=0.006). These calculations are based on the release of neutrons in the He intershell by the 13C source during the interpulse periods followed by a second small burst of neutrons released in the convective thermal pulse by the marginal activation of the 22Ne source. In the 1.5 and 3 Msolar models with solar metallicity the predicted shifts of the Si isotopic ratios in the stars' envelope are much smaller (<30‰ for the 29Si/28Si ratio and <40‰ for the 30Si/28Si ratio; the two ratios are normalized to solar) than the range observed in the mainstream grains (up to 180‰). Isotopic shifts are of the same order as in the SiC grains for the 5 Msolar and Z=0.006 models, but the slope of the 29Si/28Si versus 30Si/28Si correlation line is much smaller than that of the grains. We also show that none of the models can reproduce the correlations

  1. CVD of SiC and AlN using cyclic organometallic precursors

    NASA Technical Reports Server (NTRS)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  2. Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

    NASA Astrophysics Data System (ADS)

    Stepikhova, M. V.; Krasil'nikova, L. V.; Krasil'nik, Z. F.; Shengurov, V. G.; Chalkov, V. Yu.; Svetlov, S. P.; Zhigunov, D. M.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2006-02-01

    In this work we present the results of theoretical calculations and experimental studies carried out for Si/Si 1-XGe X: Er/Si heterostructures that show promise as the material for realizing a laser with Si: Er active medium. Analysis of the mode composition and estimation of the degree of electromagnetic wave localization in Si/Si 1-XGe X: Er/Si waveguide structures have been performed for a fairly wide range of values of the Si 1-XGe X: Er layer thickness and Ge content. It is shown that a method of sublimation molecular-beam epitaxy in germane gas atmosphere enables growing effective light-emitting structures of Si/Si 1-XGe X: Er/Si with the external quantum efficiency to 0.2%. The kinetics analysis of erbium photoluminescence, performed for the test structures, demonstrates the appearance of the population inversion of Er 3+ ion states under optical pumping. The number of Er ions in the inversely populated state comes to about 80% from the total concentration of optically active Er ions at the excitation power density of 4 W/cm 2.

  3. Angular variation of oblique Hanle effect in CoFe/SiO2/Si and CoFe/Ta/SiO2/Si tunnel contacts

    NASA Astrophysics Data System (ADS)

    He, Shumin; Lee, Jeong-Hyeon; Grünberg, Peter; Cho, B. K.

    2016-03-01

    Oblique Hanle effect (OHE) with magnetic field applied at an oblique angle θ (0 ≤ θ ≤ 180°) was systematically investigated using the 3-terminal (3T) geometry with CoFe/SiO2/Si tunnel contacts. Clear Hanle-like signals with asymmetric voltage dependence are obtained for all angles. It is found that the asymptotic value of the OHE uniquely depends on the angle θ and its angular variation can be fitted well with both functions of cos2θ and /1 1 - α γ 2 cos 2 θ as predicted from spin injection and impurity-assisted magnetoresistance models, respectively. In addition, no Hanle signal is observed in tunnel junctions with spin-unpolarized CoFe/Ta/SiO2/Si structure, which is also understandable by both models. The experimental data in this study demonstrate clearly that further study should be still done to uncover the underlying physics of the Hanle-like signal in 3T tunnel contacts.

  4. Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

    PubMed

    Kim, Nam Hun; Jeon, Min Hwan; Kim, Tae Hyung; Yeom, Geun Young

    2015-11-01

    The characteristics of embedded pulse plasma using 60 MHz radio frequency as the source power and 2 MHz radio frequency as the bias power were investigated for the etching of SiO2 masked with an amorphous carbon layer (ACL) using an Ar/C4F8/O2 gas mixture. Especially, the effects of the different pulse duty ratio of the embedded dual-frequency pulsing between source power and bias power on the characteristics on the plasma and SiO2 etching were investigated. The experiment was conducted by varying the source duty percentage from 90 to 30% while bias duty percentage was fixed at 50%. Among the different duty ratios, the source duty percentage of 60% with the bias duty percentage of 50% exhibited the best results in terms of etch profile and etch selectivity. The change of the etch characteristics by varying the duty ratios between the source power and bias power was believed to be related to the different characteristics of gas dissociation, fluorocarbon passivation, and ion bombardment observed during the different source/bias pulse on/off combinations. In addition, the instantaneous high electron temperature peak observed during each initiation of the source pulse-on period appeared to affect the etch characteristics by significant gas dissociation. The optimum point for the SiO2 etching with the source/bias pulsed dual-frequency capacitively coupled plasma system was obtained by avoiding this instant high electron temperature peak while both the source power and bias power were pulsed almost together, therefore, by an embedded RF pulsing. PMID:26726572

  5. ALMA Observations of the Galactic Center: SiO Outflows and High Mass Star Formation Near Sgr A

    NASA Technical Reports Server (NTRS)

    Yusef-Zadeh, F.; Royster, M.; Wardle, M.; Arendt, R.; Bushouse, H.; Gillessen, S.; Lis, D.; Pound, M. W.; Roberts, D. A.; Whitney, B.; Wooten, A.

    2013-01-01

    Using ALMA observations of the Galactic center with a spatial resolution of 2.61" x 0.97 ", we detected 11 SiO (5-4) clumps of molecular gas in the within 0.6pc (15") of Sgr A*, interior of the 2-pc circumnuclear molecular ring. Three SiO (5-4) clumps closest to Sgr A* show the largest central velocities of approximately 150 kilometers per second and broadest asymmetric linewidths with total linewidths FWZI approximately 110-147 kilometers per second. Other clumps are distributed mainly to the NE of the ionized minispiral with narrow linewidths of FWHM approximately 11-27 kilometers per second. Using CARMA data, LVG modeling of the broad velocity clumps, the SiO (5-4) and (2-1) line ratios constrain the column density N(SiO) approximately 10(exp 14) per square centimeter, and the H2 gas density n(sub H2) = (3-9) x 10(exp 5) per cubic centimeter for an assumed kinetic temperature 100-200K. The SiO (5-4) clumps with broad and narrow linewidths are interpreted as highly embedded protostellar outflows, signifying an early stage of massive star formation near Sgr A* in the last 104 years. Additional support for the presence of YSO outflows is that the luminosities and velocity widths lie in the range detected from protostellar outflows in star forming regions in the Galaxy. Furthermore, SED modeling of stellar sources along the N arm show two YSO candidates near SiO clumps supporting in-situ star formation near Sgr A*. We discuss the nature of star formation where the gravitational potential of the black hole dominates. In particular, we suggest that external radiative pressure exerted on self-shielded molecular clouds enhance the gas density, before the gas cloud become gravitationally unstable near Sgr A*.

  6. Assembly of highly aligned DNA strands onto Si chips.

    PubMed

    Zhang, Jianming; Ma, Yufeng; Stachura, Sylwia; He, Huixin

    2005-04-26

    This paper reports a robust and efficient approach to assemble highly aligned DNA strands onto Si chips. The method combines advantages from molecular combing and microcontact printing to realize controlling both the density and direction of DNA strands on the Si chip. In addition, it also can be utilized to prepare stretched DNA structures on solid surfaces. Compared to approaches that use molecular combing directly on silanated surfaces, the stretched single-chain DNA structures are straighter. Furthermore, by exploiting the hydrophobic property of the intrinsic poly(dimethylsiloxane) stamp, this study also describes a simple way to produce straight bundled DNA arrays on Si and other substrates.

  7. Precipitation Sequence of a SiC Particle Reinforced Al-Mg-Si Alloy Composite

    NASA Astrophysics Data System (ADS)

    Shen, Rujuan; Wang, Yihan; Guo, Baisong; Song, Min

    2016-10-01

    In this study, the precipitation sequence of a 5 vol.% SiC particles reinforced Al-1.12 wt.%Mg-0.77 wt.%Si alloy composite fabricated by traditional powder metallurgy method was investigated by transmission electron microscopy and hardness measurements. The results indicated that the addition of SiC reinforcements not only suppresses the initial aging stage but also influences the subsequent precipitates. The precipitation sequence of the composite aged at 175 °C can be described as: Guinier-Preston (G.P.) zone → β″ → β' → B', which was confirmed by high-resolution transmission electron microscopy. This work might provide the guidance for the design and fabrication of hardenable automobile body sheet by Al-based composites with enhanced mechanical properties.

  8. Industrial ion source technology

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.; Robinson, R. S.

    1979-01-01

    In reactive ion etching of Si, varying amounts of O2 were added to the CF4 background. The experimental results indicated an etch rate less than that for Ar up to an O2 partial pressure of about .00006 Torr. Above this O2 pressure, the etch rate with CF4 exceeded that with Ar alone. For comparison the random arrival rate of O2 was approximately equal to the ion arrival rate at a partial pressure of about .00002 Torr. There were also ion source and ion pressure gauge maintenance problems as a result of the use of CF4. Large scale (4 sq cm) texturing of Si was accomplished using both Cu and stainless steel seed. The most effective seeding method for this texturing was to surround the sample with large inclined planes. Designing, fabricating, and testing a 200 sq cm rectangular beam ion source was emphasized. The design current density was 6 mA/sq cm with 500 eV argon ions, although power supply limitations permitted operation to only 2 mA/sq cm. The use of multiple rectangular beam ion sources for continuous processing of wider areas than would be possible with a single source was also studied. In all cases investigated, the most uniform coverage was obtained with 0 to 2 cm beam overlay. The maximum departure from uniform processing at optimum beam overlap was found to be +15%.

  9. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  10. Reactions of SiCl2 and SiHCl with H and Cl Atoms

    NASA Technical Reports Server (NTRS)

    Walch, Stephen P.; Dateo, C. E.

    2001-01-01

    Calculations have been carried out for the reaction of SiCl2 and SiHCl with H and Cl atoms. In each case, the stationary point geometries and harmonic frequencies were characterized using CASSCF/derivative methods and the cc-pVDZ basis set. Accurate energetics were obtained by combining the CCSD(T) results using the a-cc-pVTZ basis set with an extrapolation to the basis set limit using the a-cc-pVDZ, a-cc-pVTZ, and a-cc-pVQZ basis sets at the MP2 level. The geometries, energetics, and harmonic frequencies were used to obtain rate constants using conventional transition state theory or a Gorin-like model. In each case we find direct abstraction pathways compete with an addition elimination pathway. In the case of SiClH + H the two direct pathways are H abstraction which is barrierless and Cl abstraction with a barrier of 13.5 kcal/mol, while the addition elimination process has a barrier of 26.9 kcal/mol. In the case of SiCl2 + H the direct pathway is Cl abstraction with a barrier of 16.4 kcal/mol, while the addition elimination pathway has a barrier of 29.6 kcal/mol. In the case of SiClH + Cl the direct pathway is H abstraction which is barrierless and the addition elimination pathway has a barrier of 2.0 kcal/mol.

  11. Degradation of organic dyes by Si/SiOx core-shell nanowires: Spontaneous generation of superoxides without light irradiation.

    PubMed

    Cao, Yu; Gu, Xiaoyu; Yu, Hongkun; Zeng, Wei; Liu, Xiang; Jiang, Suhua; Li, Yuesheng

    2016-02-01

    Recently, silicon nanowires (SiNWs) have been proven to be highly active in the photocatalysis of dye degradation. However, the unstable hydrogen-terminated surface and the need for constant light irradiation hinder their extensive use. In this work, a stable silica shell was intentionally formed on the surface of SiNWs to produce Si/SiOx core-shell silicon nanowires (S-SiNWs). Light-illuminated or not, S-SiNWs showed almost identical degradation ability for the degradation of indigo carmine (IC) in both conditions, which meant neither hydrogen termination nor light irradiation was a prerequisite for the degradation activity of S-SiNWs. UV/Vis spectroscopy and liquid chromatography/mass spectrometry showed that IC was converted into isatin sulfonic acid in this process. Quenching studies and electron paramagnetic resonance spectroscopy revealed that this bleaching ability was highly dependent on superoxides. A possible mechanism was accordingly suggested. In addition, the recently discovered reductase-like activity of SiNWs can be explained by the superoxides generation.

  12. Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2016-08-01

    In this study, we proposed and demonstrated a self-rectifying property of a silicon nitride (Si3N4)-based resistive random access memory (RRAM) device by employing p-type silicon ( p-Si) as the bottom electrode. The RRAM devices consisting of Al/Si3N4/ p-Si are fabricated by using a low-pressure chemical-vapor deposition and exhibited an intrinsic diode property with non-linear current-voltage ( I-V) behavior. In addition, compared to the conventional metal/insulator/metal (MIM) structure of Al/Si3N4/Ti RRAM cells, the operating current over the entire bias region for the proposed metal/insulator/semiconductor (MIS) cells is dramatically lower because the introduced p-Si bottom electrode efficiently suppresses the current in both the low- and the high resistance states. Then, the results mean that when p-Si is employed as a bottom electrode, the Si3N4-based RRAM cells can be applied to selector-free RRAM cells.

  13. Characterization of amorphous silicon carbide and silicon carbonitride thin films synthesized by polymer-source chemical vapor deposition. Mechanical structural and metal-interface properties

    NASA Astrophysics Data System (ADS)

    Awad, Yousef

    Amorphous silicon carbide (a-SiC) and silicon carbonitride thin films have been deposited onto a variety of substrates by Polymer-Source Chemical Vapor Deposition (PS-CVD). The interfacial interaction between the a-SiC films and several substrates including silicon, SiO2, Si3N 4, Cr, Ti and refractory metal-coated silicon has been studied. The effect of thermal annealing on the structural and mechanical properties of the prepared films has been discussed in detail. The composition and bonding states are uniquely characterized with respect to the nitrogen atomic percentage introduced into the a-SiCN:H films. Capacitance-voltage (C-V) measurements were systematically used to evaluate the impurity level of the deposited a-SiC films. The chemical bonding of the films was systematically examined by means of Fourier transform infrared spectroscopy (FTIR). In addition, elastic recoil detection (ERD) and X-ray photoelectron spectroscopy (XPS) techniques were used to determine the elemental composition of the films and of their interface with substrates, while X-ray reflectivity measurements (XRR) were used to account for the film density. Spectral deconvolution was used to extract the individual components of the FTIR and XPS spectra. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were also employed to characterize the surface morphology of the films. In addition, their mechanical properties [(hardness (H) and Young's modulus (E)] were investigated by using the nanoindentation technique. The impurity levels of the a-SiC films were found to be clearly correlated with the nature of the underlying substrates. The Pt-Rh and TiN-coated Si substrates were shown to lead to the lowest impurity level (˜ 1x10 13 cm-3) in the PS-CVD grown a-SiC films, while Cr and Ti-coated Si substrates induced much higher impurity concentrations. Such high impurity levels were shown to be a consequence of a strong metallic diffusion of the metallic species (Cr or Ti). In

  14. Fabrication of lightweight Si/SiC LIDAR mirrors

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S.; Taylor, Raymond L.

    1991-01-01

    A new, chemical vapor deposition (CVD) process was developed for fabricating lightweight, polycrystalline silicon/silicon-carbide (Si/SiC) mirrors. The process involves three CVD steps: (1) to produce the mirror faceplate; (2) to form the lightweight backstructure, which is deposited integral to the faceplate; and (3) to deposit a layer of optical-grade material, e.g., Si, onto the front surface of the faceplate. The mirror figure and finish are fabricated into the faceplate.

  15. Vinyl capped addition polyimides

    NASA Technical Reports Server (NTRS)

    Vannucci, Raymond D. (Inventor); Malarik, Diane C. (Inventor); Delvigs, Peter (Inventor)

    1991-01-01

    Polyimide resins (PMR) are generally useful where high strength and temperature capabilities are required (at temperatures up to about 700 F). Polyimide resins are particularly useful in applications such as jet engine compressor components, for example, blades, vanes, air seals, air splitters, and engine casing parts. Aromatic vinyl capped addition polyimides are obtained by reacting a diamine, an ester of tetracarboxylic acid, and an aromatic vinyl compound. Low void materials with improved oxidative stability when exposed to 700 F air may be fabricated as fiber reinforced high molecular weight capped polyimide composites. The aromatic vinyl capped polyimides are provided with a more aromatic nature and are more thermally stable than highly aliphatic, norbornenyl-type end-capped polyimides employed in PMR resins. The substitution of aromatic vinyl end-caps for norbornenyl end-caps in addition polyimides results in polymers with improved oxidative stability.

  16. Tackifier for addition polyimides

    NASA Technical Reports Server (NTRS)

    Butler, J. M.; St.clair, T. L.

    1980-01-01

    A modification to the addition polyimide, LaRC-160, was prepared to improve tack and drape and increase prepeg out-time. The essentially solventless, high viscosity laminating resin is synthesized from low cost liquid monomers. The modified version takes advantage of a reactive, liquid plasticizer which is used in place of solvent and helps solve a major problem of maintaining good prepeg tack and drape, or the ability of the prepeg to adhere to adjacent plies and conform to a desired shape during the lay up process. This alternate solventless approach allows both longer life of the polymer prepeg and the processing of low void laminates. This approach appears to be applicable to all addition polyimide systems.

  17. Electrophilic addition of astatine

    SciTech Connect

    Norseev, Yu.V.; Vasaros, L.; Nhan, D.D.; Huan, N.K.

    1988-03-01

    It has been shown for the first time that astatine is capable of undergoing addition reactions to unsaturated hydrocarbons. A new compound of astatine, viz., ethylene astatohydrin, has been obtained, and its retention numbers of squalane, Apiezon, and tricresyl phosphate have been found. The influence of various factors on the formation of ethylene astatohydrin has been studied. It has been concluded on the basis of the results obtained that the univalent cations of astatine in an acidic medium is protonated hypoastatous acid.

  18. UHV-MOCVD growth of TiO 2 on SiO x/Si(1 1 1): Interfacial properties reflected in the Si 2p photoemission spectra

    NASA Astrophysics Data System (ADS)

    Karlsson, P. G.; Richter, J. H.; Andersson, M. P.; Blomquist, J.; Siegbahn, H.; Uvdal, P.; Sandell, A.

    2005-04-01

    Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 °C and flux-limited growth at 500 °C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiO x/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiO x/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO 2) x(SiO 2) y where x and y changes linearly and continuously over the interface. The model quantifies how (TiO 2) x(SiO 2) y mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon.

  19. Functional Generalized Additive Models.

    PubMed

    McLean, Mathew W; Hooker, Giles; Staicu, Ana-Maria; Scheipl, Fabian; Ruppert, David

    2014-01-01

    We introduce the functional generalized additive model (FGAM), a novel regression model for association studies between a scalar response and a functional predictor. We model the link-transformed mean response as the integral with respect to t of F{X(t), t} where F(·,·) is an unknown regression function and X(t) is a functional covariate. Rather than having an additive model in a finite number of principal components as in Müller and Yao (2008), our model incorporates the functional predictor directly and thus our model can be viewed as the natural functional extension of generalized additive models. We estimate F(·,·) using tensor-product B-splines with roughness penalties. A pointwise quantile transformation of the functional predictor is also considered to ensure each tensor-product B-spline has observed data on its support. The methods are evaluated using simulated data and their predictive performance is compared with other competing scalar-on-function regression alternatives. We illustrate the usefulness of our approach through an application to brain tractography, where X(t) is a signal from diffusion tensor imaging at position, t, along a tract in the brain. In one example, the response is disease-status (case or control) and in a second example, it is the score on a cognitive test. R code for performing the simulations and fitting the FGAM can be found in supplemental materials available online.

  20. Development of the tailored SiC/SiC composites by the combined fabrication process of ICVI and NITE methods

    SciTech Connect

    Shimoda, Kazuya; Hinoki, Tatsuya; Katoh, Yutai; Kohyama, Akira

    2009-01-01

    In order to improve the thermo-mechanical performances of SiC/SiC composite, process improvement and modification by the combination of nano-infiltration and transient eutectic-phase (NITE) method and chemical vapor infiltration (CVI) method were studied. Multilayered PyC/SiC fiber coating and matrix infiltration within fiber-tows were prepared with isothermal/isobaric CVI (ICVI) method and full-densification of SiC matrix was examined with NITE methods using four kinds of processing options. Applied pressure was useful for nearly-full matrix densification due to the promoting infiltration driving force of SiC nano-powder intra-fiber-tows, but simultaneously caused the sever degradation of fibers and interphase with fracture, resulting in lower strength. Increase of additives amount and additional polymer were effective ways for matrix densification by SiC nano-power infiltration intra-fiber bundles without pressure. Thermal conductivity was greatly improved with the decrease of matrix porosity. The tailoring of thermo-mechanical properties might be easily controlled by the SiC matrix porosity without processinduced fibers and interphases degradations.

  1. Stellar Imager (SI) Space Mission: Stellar Magnetic Activity

    NASA Technical Reports Server (NTRS)

    Carpenter, K. G.

    2006-01-01

    The Stellar Imager (SI) is a UV-Optical, Space-Based interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and stellar interiors (via asteroseismology) and of the Universe in general. SI is identified as a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes: The 0.1 mas resolution of this deep-space telescope will transform point sources into extended sources, and snapshots into evolving views. SI'S science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI'S prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. In this paper we will discuss the science goals of the SI Mission and a mission architecture that could meet those goals.

  2. Consolidation of silicon nitride without additives. [for gas turbine engine efficiency increase

    NASA Technical Reports Server (NTRS)

    Sikora, P. F.; Yeh, H. C.

    1976-01-01

    The use of ceramics for gas turbine engine construction might make it possible to increase engine efficiency by raising operational temperatures to values beyond those which can be tolerated by metallic alloys. The most promising ceramics being investigated in this connection are Si3N4 and SiC. A description is presented of a study which had the objective to produce dense Si3N4. The two most common methods of consolidating Si3N4 currently being used include hot pressing and reaction sintering. The feasibility was explored of producing a sound, dense Si3N4 body without additives by means of conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. It was found that Si3N4 can be densified without additions to a density which exceeds 95% of the theoretical value

  3. SiGe/Si Monolithically Integrated Amplifier Circuits

    NASA Technical Reports Server (NTRS)

    Katehi, Linda P. B.; Bhattacharya, Pallab

    1998-01-01

    With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

  4. Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Maserjian, Joseph

    1992-01-01

    Cutoff wavelengths tailored by choice of Ge content. Infrared detectors based on internal photoemission at Si1-xGex/Si heterojunctions exhibited photoresponses at wavelengths from 2 to 12 micrometers in initial tests. Si1-xGex/Si-heterojunction internal-photoemission detectors tailored for use at wavelengths of order of 10 micrometers. Future developments expected to include integration of such devices with silicon readout circuitry to form infrared-imaging arrays. Imaging arrays operating in important wavelength range of 8 to 12 micrometers can be fabricated relatively inexpensively for use in outer-space, military, and industrial applications.

  5. Radiative thermal rectification between SiC and SiO2.

    PubMed

    Joulain, Karl; Ezzahri, Younès; Drevillon, Jérémie; Rousseau, Benoît; De Sousa Meneses, Domingos

    2015-11-30

    By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are reported here. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.

  6. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE PAGESBeta

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  7. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    SciTech Connect

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a corresponding dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.

  8. Radiative thermal rectification between SiC and SiO2.

    PubMed

    Joulain, Karl; Ezzahri, Younès; Drevillon, Jérémie; Rousseau, Benoît; De Sousa Meneses, Domingos

    2015-11-30

    By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are reported here. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances. PMID:26698789

  9. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    NASA Astrophysics Data System (ADS)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  10. Hybrid Simulation of Duty Cycle Influences on Pulse Modulated RF SiH4/Ar Discharge

    NASA Astrophysics Data System (ADS)

    Wang, Xifeng; Song, Yuanhong; Zhao, Shuxia; Dai, Zhongling; Wang, Younian

    2016-04-01

    A one-dimensional fluid/Monte-Carlo (MC) hybrid model is developed to describe capacitively coupled SiH4/Ar discharge, in which the lower electrode is applied by a RF source and pulse modulated by a square-wave, to investigate the modulation effects of the pulse duty cycle on the discharge mechanism. An electron Monte Carlo simulation is used to calculate the electron energy distribution as a function of position and time phase. Rate coefficients in chemical reactions can then be obtained and transferred to the fluid model for the calculation of electron temperature and densities of different species, such as electrons, ions, and radicals. The simulation results show that, the electron energy distribution f(ɛ) is modulated evidently within a pulse cycle, with its tail extending to higher energies during the power-on period, while shrinking back promptly in the afterglow period. Thus, the rate coefficients could be controlled during the discharge, resulting in modulation of the species composition on the substrate compared with continuous excitation. Meanwhile, more negative ions, like SiH‑3 and SiH‑2, may escape to the electrodes owing to the collapse of ambipolar electric fields, which is beneficial to films deposition. Pulse modulation is thus expected to provide additional methods to customize the plasma densities and components. supported by National Natural Science Foundation of China (No. 11275038)

  11. Hybrid Simulation of Duty Cycle Influences on Pulse Modulated RF SiH4/Ar Discharge

    NASA Astrophysics Data System (ADS)

    Wang, Xifeng; Song, Yuanhong; Zhao, Shuxia; Dai, Zhongling; Wang, Younian

    2016-04-01

    A one-dimensional fluid/Monte-Carlo (MC) hybrid model is developed to describe capacitively coupled SiH4/Ar discharge, in which the lower electrode is applied by a RF source and pulse modulated by a square-wave, to investigate the modulation effects of the pulse duty cycle on the discharge mechanism. An electron Monte Carlo simulation is used to calculate the electron energy distribution as a function of position and time phase. Rate coefficients in chemical reactions can then be obtained and transferred to the fluid model for the calculation of electron temperature and densities of different species, such as electrons, ions, and radicals. The simulation results show that, the electron energy distribution f(ɛ) is modulated evidently within a pulse cycle, with its tail extending to higher energies during the power-on period, while shrinking back promptly in the afterglow period. Thus, the rate coefficients could be controlled during the discharge, resulting in modulation of the species composition on the substrate compared with continuous excitation. Meanwhile, more negative ions, like SiH-3 and SiH-2, may escape to the electrodes owing to the collapse of ambipolar electric fields, which is beneficial to films deposition. Pulse modulation is thus expected to provide additional methods to customize the plasma densities and components. supported by National Natural Science Foundation of China (No. 11275038)

  12. Gamma ray irradiated silicon nanowires: An effective model to investigate defects at the interface of Si/SiOx

    SciTech Connect

    Yin, Kui; Zhao, Yi; Liu, Liangbin; Lee, Shuit-Tong; Shao, Mingwang E-mail: xuegi@nju.edu.cn; Wang, Xiaoliang E-mail: xuegi@nju.edu.cn Xue, Gi E-mail: xuegi@nju.edu.cn

    2014-01-20

    The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. {sup 29}Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q{sup 4} unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.

  13. Fabrication and Analysis of the Wear Properties of Hot-Pressed Al-Si/SiCp + Al-Si-Cu-Mg Metal Matrix Composite

    NASA Astrophysics Data System (ADS)

    Bang, Jeongil; Oak, Jeong-Jung; Park, Yong Ho

    2016-01-01

    The aim of this study was to characterize microstructures and mechanical properties of aluminum metal matrix composites (MMC's) prepared by powder metallurgy method. Consolidation of mixed powder with gas atomized Al-Si/SiCp powder and Al-14Si-2.5Cu-0.5Mg powder by hot pressing was classified according to sintering temperature and sintering time. Sintering condition was optimized using tensile properties of sintered specimens. Ultimate tensile strength of the optimized sintered specimen was 228 MPa with an elongation of 5.3% in longitudinal direction. In addition, wear properties and behaviors of the sintered aluminum-based MMC's were analyzed in accordance with vertical load and linear speed. As the linear speed and vertical load of the wear increased, change of the wear behavior occurred in order of oxidation of Al-Si matrix, formation of C-rich layer, Fe-alloying to matrix, and melting of the specimen

  14. Characterization of SiC f/SiC and CNT/SiC composite materials produced by liquid phase sintering

    NASA Astrophysics Data System (ADS)

    Lee, J. K.; Lee, S. P.; Cho, K. S.; Byun, J. H.; Bae, D. S.

    2011-10-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2O 3-Y 2O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  15. Reaction of Si(111) Surface with Saturated Hydrocarbon

    NASA Astrophysics Data System (ADS)

    Suryana, Risa; Nakahara, Hitoshi; Ichimiya, Ayahiko; Saito, Yahachi

    2011-12-01

    Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH4) and ethane (C2H6) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high-energy electron diffraction (RHEED). Structures transition formed on the surface were 7×7, δ-7×7, 1×1, and SiC structures. In the case of CH4, the Si surfaces were carbonized at 800 °C for 120 min (7.2×104 L) with a W-filament of 2800 °C, and SiC layers were obtained. In the case of C2H6, the mixture of 7×7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7×7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH3 molecules on the surface.

  16. AES and LEED study of the zinc blende SiC(100) surface

    NASA Technical Reports Server (NTRS)

    Dayan, M.

    1985-01-01

    Auger and LEED measurements have been carried out on the (100) surface of zinc blende SiC. Two different phases of the clean surface, in addition to two kinds of oxygen-covered surfaces, have been obtained, identified, and discussed. In the oxygen-covered surface, the oxygen is bonded to the Si. The carbon-rich phase is reconstructed (2 x 1), similar to the (100) clean surfaces of Si, Ge, and diamond. The Si-topped surface is reconstructed. A model of alternating Si dimers is suggested for this surface.

  17. Role of the three Si suboxides at the surface of Si quantum dots and in Si/SiO2 quantum wells on optical response

    NASA Astrophysics Data System (ADS)

    Carrier, Pierre

    2009-03-01

    The Si/SiO2 interface structure has been extensively studied in the past, especially for MOSFET applications. Recent applications of Si/SiO2 nanostructures in solar cells and LEDs are now investigated using Si quantum dots (QD) or Si/SiO2 quantum wells (QW). The Si/SiO2 interface contains three Si suboxides, each bonded to 1, 2, or 3 oxygen atoms, respectively referred to as Si^1+, Si^2+, and Si^3+. Models that contain all three suboxides are difficult to construct; results in the literature on oxygenated Si QD usually include Si^1+ and Si^2+ only. The models presented here contain the 3 suboxides and are based on a Si/SiO2 surface model originally constructed by Pasquarello et al., Appl. Phys. Lett. 68, 625 (1996). This model was used later by the author in the study of Si/SiO2 QW [Phys. Rev. B 65, 165339 (2002)] and is now extended to Si QD. It is shown that the band gap or optical response depends strongly on the Si suboxide atomic configuration at the surface of QD or at the interface of QW. Trends on the band gap variations as function of the three suboxides will be discussed. All models (QW and QD) are structurally relaxed using the program PARSEC [Phys. Rev. Lett. 72, 1240 (1994)].

  18. Preparation of Si3N4 Form Diatomite via a Carbothermal Reduction-Nitridation Process

    NASA Astrophysics Data System (ADS)

    Ma, Bin; Huang, Zhaohui; Mei, Lefu; Fang, Minghao; Liu, Yangai; Wu, Xiaowen; Hu, Xiaozhi

    2016-05-01

    Si3N4 was produced using diatomite and sucrose as silicon and carbon sources, respectively. The effect of the C/SiO2 molar ratio, heating temperature and soaking time on the morphology and phase compositions of the final products was investigated by scanning electron microscopy, x-ray diffraction analysis and energy dispersive spectroscopy. The phase equilibrium relationships of the system at different heating temperatures were also investigated based on the thermodynamic analysis. The results indicate that the phase compositions depended on the C/SiO2 molar ratio, heating temperature and soaking time. Fabrication of Si3N4 from the precursor via carbothermal reduction nitridation was achieved at 1550°C for 1-8 h using a C/SiO2 molar ratio of 3.0. The as-prepared Si3N4 contained a low amount of Fe3Si (<1 wt.%).

  19. Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

    SciTech Connect

    Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Warren, Emily L.; Dameron, Arrelaine; Norman, Andrew G.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-06-14

    We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

  20. Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

    SciTech Connect

    Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan

    2015-04-28

    Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important part of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.