Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

PubMed

Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

2018-04-18

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Reactions of N(+) (3P) ions with normal, para, and deuterated hydrogens at low temperatures

NASA Astrophysics Data System (ADS)

Marquette, J. B.; Rebrion, C.; Rowe, B. R.

1988-08-01

The method of reaction kinetics in uniform supersonic flow (French designation CRESU; Dupeyrat et al., 1985) is used to study the reactions of N(+) (3P) with n-H2, p-H2, HD, and D2 at temperatures 8, 20, 27, 45, 68, 163, and 300 K. Results obtained using either He or N2 as the buffer gas are presented in tables and graphs and discussed in detail. The reaction with p-H2 is shown to be significantly slower than that with n-H2, a finding attributed to rotational-energy and spin-orbit-energy driving of these processes. It is pointed out that these results are in agreement with those of Barlow et al. (1986) and Herbst et al. (1987), apparently ruling out these reactions as the source of the NH3 observed in dense interstellar cloud cores.

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Chang, Kuo-Hua; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Yang, Chih-Ciao; Kuo, Huan-Shao; Yang, J. H.; Lai, Wei-Chih

2010-07-01

Inverted Al0.25Ga0.75N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2×1012 Ω and 3.4×1013 cm Hz1/2 W-1, respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Investigation of the 6 p 2(3 P 0) n p Rydberg series of bismuth by multiphoton excitation

NASA Astrophysics Data System (ADS)

Bühler, B.; Cremer, C.; Gerber, G.

1985-03-01

Rydberg states of the odd-parity series 6 p 2(3 p 0) n p of BiI are excited by a three-photon process. A two-photon dissociation of Bi2 into excited atomic states followed by a one-photon absorption leads to highly excited atomic Rydberg states up to n = 32. States of the even-parity Rydberg series 6 p 2(3 p 0) nsJ=1/2, ndJ=3/2 and ndJ=5/2 are also observed. In order to avoid the background caused by ionization of the bismuth molecules we performed a two-color excitation with pulsed dye lasers. With this experiment the 6 p 2(3 p 0) npJ=3/2 Rydberg series could be resolved up to n=75. The increasing quantum defect of this series is due to a perturbing state close to the first ionization limit. By a MQDT analysis we obtain the energy of the perturbing state and a value of 58,761.68±0.1 cm-1 for the first ionization limit of atomic bismuth.

Synthesis, Crystal and Electronic Structures of the Pnictides AE 3TrPn 3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

DOE PAGES

Stoyko, Stanislav; Voss, Leonard; He, Hua; ...

2015-09-24

New ternary arsenides AE 3TrAs 3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr 3GaP 3 and Ba 3AlP 3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr 3AlAs 3 and Ba 3AlAs 3 adopt the Ba 3AlSb 3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr 3GaP 3 and Ba 3AlP 3. Likewise, the compounds Sr 3GaAs 3 and Ba 3GaAs 3 crystallize with the Ba 3GaSb 3-type structure (Pearson symbol oP56, space groupmore » Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn 4 and GaPn 4 tetrahedra (Pn = pnictogen, i.e., P or As), separated by the alkaline-earth Sr 2+ and Ba 2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE 2+] 3[Tr 3+][Pn 3-] 3, or rather [AE 2+] 6[Tr 2Pn 6] 12-, i.e., as Zintl phases.« less

Low-temperature co-purification of NO x and Hg0 from simulated flue gas by Ce x Zr y Mn z O2/r-Al2O3: the performance and its mechanism.

PubMed

Lu, Pei; Yue, Huifang; Xing, Yi; Wei, Jianjun; Zeng, Zheng; Li, Rui; Wu, Wanrong

2018-05-11

In this study, series of Ce x Zr y Mn z O 2 /r-Al 2 O 3 catalysts were prepared by impregnation method and explored to co-purification of NO x and Hg 0 at low temperature. The physical and chemical properties of the catalysts were investigated by XRD, BET, FTIR, NH 3 -TPD, H 2 -TPR, and XPS. The experimental results showed that 10% Ce 0.2 Zr 0.3 Mn 0.5 O 2 /r-Al 2 O 3 yielded higher conversion on co-purification of NO x and Hg 0 than the other prepared catalysts at low temperature, especially at 200-300 °C. 91% and 97% convert rate of NO x and Hg 0 were obtained, respectively, when 10% Ce 0.2 Zr 0.3 Mn 0.5 O 2 /r-Al 2 O 3 catalyst was used at 250 °C. Moreover, the presence of H 2 O slightly decreased the removal of NO x and Hg 0 owing to the competitive adsorption of H 2 O and Hg 0 . When SO 2 was added, the removal of Hg 0 first increased slightly and then presented a decrease due to the generation of SO 3 and (NH 4 ) 2 SO 4 . The results of NH 3 -TPD indicated that the strong acid of 10% Ce 0.2 Zr 0.3 Mn 0.5 O 2 /r-Al 2 O 3 improved its high-temperature activity. XPS and H 2 -TPR results showed there were high-valence Mn and Ce species in 10% Ce 0.2 Zr 0.3 Mn 0.5 O 2 /r-Al 2 O 3 , which could effectively promote the removal of NO x and Hg 0 . Therefore, the mechanisms of Hg 0 and NO x removal were proposed as Hg (ad) + [O] → HgO (ad), and 2NH 3 /NH 4 + (ad) + NO 2 (ad) + NO (g) → 2 N 2  + 3H 2 O/2H + , respectively. Graphical abstract ᅟ.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: margaret.m@mail.ioffe.ru; Krivolapchuk, V. V., E-mail: vlad.krivol@mail.ioffe.ru; Feoktistov, N. A.

2008-07-15

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

Fabrication of an r-Al2Ti intermetallic matrix composite reinforced with α-Al2O3 ceramic by discontinuous mechanical milling for thermite reaction

NASA Astrophysics Data System (ADS)

Mosleh, A.; Ehteshamzadeh, M.; Taherzadeh Mousavian, R.

2014-10-01

In this study, a powder mixture with an Al/TiO2 molar ratio of 10/3 was used to form an r-Al2Ti intermetallic matrix composite (IMC) reinforced with α-Al2O3 ceramic by a novel milling technique, called discontinuous mechanical milling (DMM) instead of milling and ignition of the produced thermite. The results of energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) of samples with varying milling time indicate that this fabrication process requires considerable mechanical energy. It is shown that Al2Ti-Al2O3 IMC with small grain size was produced by DMM after 15 h of ball milling. Peaks for γ-TiAl as well as Al2Ti and Al2O3 are observed in XRD patterns after DMM followed by heat treatment. The microhardness of the DMM-treated composite produced after heat treatment was higher than Hv 700.

Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-12-01

The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

Synthesis and characterization of two layered aluminophosphates, ( T) 2HAl 2P 3O 12 ( T=2-BuNH 3+) and ( T)H 2Al 2P 3O 12 ( T=pyH +)

NASA Astrophysics Data System (ADS)

Chippindale, Ann M.; Powell, Anthony V.; Bull, Lucy M.; Jones, Richard H.; Cheetham, Anthony K.; Thomas, John M.; Xu, Ruren

1992-01-01

Two new aluminophosphates, ( T) 2HAl 2P 3O 12 ( T=2-BuNH 3+) ( I) and ( T)H 2Al 2P 3O 12 ( T=pyH +) ( II) with the same framework stoichiometry but different layer structures have been prepared under nonaqueous conditions and the structures determined by single-crystal X-ray diffraction. Compound ( I) crystallizes in the monoclinic space group P2 1/ c ( Z=4), with lattice parameters a=9.261(1) b=8.365(6), c=27.119(4) Å, β=91.50(1)δ, and V=2100.1 Å 3 ( R=0.072 and R w=0.090). The structure consists of Al-and P-centered tetrahedra linked to form layers. Protonated 2-butylamine molecules are located in the interlayer spaces and hydrogen bonded to the layers through NH 3+ groups. Weak hydrophobic van der Waals' interactions between alkyl groups of the 2-BuNH 3+ cations hold the layers together. Compound ( II) crystallizes in the triclinic space group P-1 ( Z=2), with a=8.574(2), b=8.631(3), c=10.371(2) Å, α=81.84(3), β=87.53(2), γ=69.07(2)δ, and V=709.49Å 3 ( R=0.039 and R w=0.052). The structure contains tetrahedrally coordinated P atoms and both tetrahedral and trigonal pyramidal Al atoms linked to form layers which are held together through hydrogen bonding, creating cavities in which pyH + cations reside.

p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties.

PubMed

Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J

2014-11-26

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

N-Heterocyclic Carbene Capture by Cytochrome P450 3A4

PubMed Central

Jennings, Gareth K.; Ritchie, Caroline M.; Shock, Lisa S.; Lyons, Charles E.

2016-01-01

Cytochrome P450 3A4 (CYP3A4) is the dominant P450 enzyme involved in human drug metabolism, and its inhibition may result in adverse interactions or, conversely, favorably reduce the systemic elimination rates of poorly bioavailable drugs. Herein we describe a spectroscopic investigation of the interaction of CYP3A4 with N-methylritonavir, an analog of ritonavir, widely used as a pharmacoenhancer. In contrast to ritonavir, the binding affinity of N-methylritonavir for CYP3A4 is pH-dependent. At pH <7.4, the spectra are definitively type I, whereas at pH ≥7.4 the spectra have split Soret bands, including a red-shifted component characteristic of a P450-carbene complex. Variable-pH UV-visible spectroscopy binding studies with molecular fragments narrows the source of this pH dependence to its N-methylthiazolium fragment. The C2 proton of this group is acidic, and variable-pH resonance Raman spectroscopy tentatively assigns it a pKa of 7.4. Hence, this fragment of N-methylritonavir is expected to be readily deprotonated under physiologic conditions to yield a thiazol-2-ylidene, which is an N-heterocyclic carbene that has high-affinity for and is presumed to be subsequently captured by the heme iron. This mechanism is supported by time-dependent density functional theory with an active site model that accurately reproduces distinguishing features of the experimental UV-visible spectra of N-methylritonavir bound to CYP3A4. Finally, density functional theory calculations support that this novel interaction is as strong as the tightest-binding azaheterocycles found in P450 inhibitors and could offer new avenues for inhibitor development. PMID:27126611

Theoretical study of the hyperfine-interaction constants and the isotope-shift factors for the 3 s21S0-3 s 3 p 3,1P1o transitions in Al+

NASA Astrophysics Data System (ADS)

Zhang, Tingxian; Xie, Luyou; Li, Jiguang; Lu, Zehuang

2017-07-01

We calculated the magnetic dipole and the electric quadrupole hyperfine interaction constants of 3 s 3 p 3,1P1o states and the isotope shift, including mass and field shift, factors for transitions from these two states to the ground state 3 s 2 1S0 in Al+ ions using the multiconfiguration Dirac-Hartree-Fock method. The effects of the electron correlations and the Breit interaction on these physical quantities were investigated in detail based on the active space approach. It is found that the core-core and the higher order correlations are considerable for evaluating the uncertainties of the atomic parameters concerned. The uncertainties of the hyperfine interaction constants in this work are less than 1.6%. Although the isotope shift factors are highly sensitive to the electron correlations, reasonable uncertainties were obtained by exploring the effects of the electron correlations. Moreover, we found that the relativistic nuclear recoil corrections to the mass shift factors are very small and insensitive to the electron correlations for Al+. These atomic parameters present in this work are valuable for extracting the nuclear electric quadrupole moments and the mean-square charge radii of Al isotopes.

Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

2016-08-01

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Hertkorn, J.; Thapa, S. B.; Wunderer, T.; Scholz, F.; Wu, Z. H.; Wei, Q. Y.; Ponce, F. A.; Moram, M. A.; Humphreys, C. J.; Vierheilig, C.; Schwarz, U. T.

2009-07-01

In this study, we present theoretical and experimental results regarding highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures. Based on simulation results, several multiheterostructures were grown by metalorganic vapor phase epitaxy. Using high resolution x-ray diffraction and x-ray reflectometry, the abruptness of the AlGaN/AlN/GaN interfaces could be determined. Using electron holography, the energetic profile of the valence band could be measured, yielding important information about the vertical carrier transport in such multiheterostructures. The electrical properties of the samples were investigated by measuring the lateral (σL) and vertical (σV) conductivity, respectively. The free hole concentration of a sample optimized in terms of lateral conductivity was measured to be 1.2×1019 cm-3 (295 K) with a mobility of 7 cm2/V s, yielding a record σL of 13.7 (Ω cm)-1. Low temperature Hall measurements (77 K) proved the existence of a two-dimensional hole gas at the AlN/GaN interface, as the lateral conductivity could be increased to 30 (Ω cm)-1 and no carrier freeze out was observable. By substituting the p-GaN layer in a light emitting diode (LED) with an AlGaN/GaN multiheterostructure, the overall voltage drop could be reduced by more than 100 mV (j =65 A/cm2). Furthermore improved current spreading on the p-side of LEDs with integrated AlGaN/AlN/GaN multiheterostructures could be proved by μ-electroluminescence, respectively.

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

PubMed Central

Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

2016-01-01

A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

PubMed Central

Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

2015-01-01

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

PubMed

Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

2015-08-07

Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

NASA Astrophysics Data System (ADS)

Watanabe, Yukio

1999-05-01

Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

PubMed Central

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

Rétinoschisis maculaire bilatéral associé à un rétinoschisis périphérique unilatéral

PubMed Central

Oummad, Hanane; Elkaddoumi, Maryama; Maré, Josiane; Lezrek, Mounir; Cherkaoui, Ouafae

2017-01-01

Le retinoschisis juvénile lié au chromosome X est une affection héréditaire qui affecte habituellement les garçons avec de rare cas d’atteinte du sexe féminin. Les premières manifestations cliniques apparaissent généralement au cours de la première décennie. Il est responsable d’une baisse d’acuité visuelle d’importance variable et lentement progressive. Cette évolution peut être émaillée d’hémorragies dans le vitré et de décollements de rétine volontiers récidivants. Nous présentons le cas d’un patient âgé de 17ans. Au fond d'œil on retrouve remaniement maculaire microkystique stellaire bilatéral, centré sur la fovéola, associé à des schisis périphériques avec décollement de rétine et déchirure des feuillets interne et externe unilatéral. PMID:29158861

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

PubMed

Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

2018-04-24

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

Evaluation of electron population terms for 3Se>4p, 3S>3p, and 3O>(2p): how do HOMO and LUMO shrink or expand depending on nuclear charges?

PubMed

Nakanishi, Waro; Hayashi, Satoko; Narahara, Kenji; Yamaki, Daisuke; Hada, Masahiko

2008-01-01

Electron population terms 3)N> are evaluated for N=Se, S, and O. Calculations are performed on HOMO and LUMO constructed by pure atomic 4p(Se), 3p(S), and 2p(O) orbitals, employing the 6-311+G(3d) and/or 6-311(++)G(3df,3pd) basis sets at the HF, MP2, and DFT (B3 LYP) levels. Se(4+), Se(2+), Se(0), and Se(2-) with the O(h) symmetry are called G(A: Se) and HSe(+), H(2)Se, and HSe(-) with the C(infinityh) or C(2v) symmetry are named G(B: Se), here [G(A+B: Se) in all]. HOMO and LUMO in G(A+B: N) (N=Se, S, and O) satisfy the conditions of the calculations for 3)N>. The 3)Se>(4p), 3)S>(3p), and 3)O>(2p) values correlate well with the corresponding MO energies (epsilon(N)) for all calculation levels employed. Plots of 3)N>(HOMO) and 3)N>(LUMO) versus Q(N) (N=Se, S, and O) at the HF and MP2 levels are analyzed as two correlations. However, the plots at the DFT level can be analyzed as single correlation. A regression curve is assumed for the analysis. Behaviors of 3)N> clarify how valence orbitals shrink or expand depending on Q(N). The applicability of 3)N> is examined to establish a new method that enables us to analyze chemical shifts with the charge effect separately from others. A utility program derived from the Gaussian 03 (NMRANAL-NH03G) is applied to evaluate 3)N> and examine the applicability to the NMR analysis.

Refractive indices measurement of (GaInP)m/(AlInP)n quasi-quanternaries and GaInP/AllnP multiple quantum wells

NASA Astrophysics Data System (ADS)

Kaneko, Yawara; Kishino, Katsumi

1994-08-01

Measurements of the refractive indices of (GaInP)m/(AlInP)n quasi-quaternaries (QQs), GaInP/AlInP multiple quantum wells (MQWs), and (Al(x)Ga(1 - x))(0.5) In(0.5)P quanternaries were made systematically, using the reflectance method, in photon energy ranges nearly as high as up to the band gap. Data was fitted using the modified single effective oscillator (MSEO) method. A single oscillator energy E(sub zero) of 4.17 + 0.49 x(sub eg) and dispersion energy (E(sub d) of 35.79 - 1.16 x(sub eg) was obtained for (GaInP)m/(AlInP)2 QQs, where the equivalent Al composition x(sub eg) is defined by the stacking film thickness ratio x(sub eg) = d(AlInP)/(d(GaInP) + d(AlInP). Agreement of refractive indices obtained for QQs and quaternary compounds with equivalent x(sub eg) has been confirmed. Still, for the GaInP/AlInP MQWs, MSEO fitting was also agreeable, using the same oscillator energy E(sub zero) and dispersion energy E(sub d) of the (GaInP)m/(AlInP)2 QQs with the same thickness ratio, and substituting band gap energy E(sub Gamma) values shifted due to quantum effects.

Laser gain on 3p-3d and 3s-3p transitions and X-ray line ratios for the nitrogen isoelectronic sequence

NASA Technical Reports Server (NTRS)

Feldman, U.; Seely, J. F.; Bhatia, A. K.

1989-01-01

Results are presented on calculations of the 72 levels belonging to the 2s(2)2p(3), 2s2p(4), 2p(5), 2s(2)2p(2)3s, 2s(2)2p(2)3p, and 2s(2)2p(2)3d configurations of the N I isoelectronic sequence for the ions Ar XII, Ti XVI, Fe XX, Zn XXIV, and Kr XXX, for electron densities up to 10 to the 24th/cu cm. It was found that large population inversions and gain occur between levels in the 2s(2)2p(2)3p configuration and levels in the 2s(2)2p(2)3d configuration that cannot decay to the ground configuration by an electric dipole transition. For increasing electron densities, the intensities of the X-ray transitions from the 2s(2)2p(2)3p configuration to the ground configuration decrease relative to the transitions from the 2s(2)2p(2)3s and 2s(2)2p(2)3d configurations to the ground configuration. The density dependence of these X-ray line ratios is presented.

Neuropsychology and neuropharmacology of P3a and P3b.

PubMed

Polich, John; Criado, José R

2006-05-01

Perspectives on the P300 event-related brain potential (ERP) are reviewed by outlining the distinction between the P3a and P3b subcomponents. The critical factor for eliciting P3a is how target/standard discrimination difficulty rather than novelty modulates task processing. The neural loci of P3a and P3b generation are sketched and a theoretical model is developed. P3a originates from stimulus-driven disruption of frontal attention engagement during task processing. P3b originates when temporal-parietal mechanisms process the stimulus information for memory storage. The neuropharmacological implications of this view are then outlined by evaluating how acute and chronic use of ethanol, marijuana, and nicotine affect P3a and P3b. The findings suggest that the circuit underlying ERP generation is influenced in a different ways for acute intake and varies between chronic use levels across drugs. Theoretical implications are assessed.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, BP; Fabien, CAM; Merola, JJ

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 x 10(19) cm(-3) with effective acceptor activation energies of 51more » meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 x 10(20) cm(-3) show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 x 10(19) cm(-3). The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5V and series resistances of 6-10 Omega without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K. (C) 2015 AIP Publishing LLC.« less

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

NASA Astrophysics Data System (ADS)

Huang, Yong; Li, PeiXian; Yang, Zhuo; Hao, Yue; Wang, XiaoBo

2014-05-01

Significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based UV light-emitting diode (LED) with inserting p-GaN/p-AlGaN superlattice (p-SLs) layers (instead of p-AlGaN single layer) between multiple quantum wells and Mg-doped GaN layer are reported. The pass yield of the LEDs increased from 73.53% to 93.81% under negative 2000 V ESD pulses. In addition, the light output power (LOP) and efficiency droop at high injection current were also improved. The mechanism of the enhanced ESD properties was then investigated. After excluding the effect of capacitance modulation, high-resolution X-ray diffraction (XRD) and atomic force microscope (AFM) measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs, which indicated less leakage paths, rather than the current spreading improved by p-SLs.

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

P3N-PIPO, a Frameshift Product from the P3 Gene, Pleiotropically Determines the Virulence of Clover Yellow Vein Virus in both Resistant and Susceptible Peas

PubMed Central

Suzuki, Haruka; Miyashita, Yuri; Choi, Sun Hee; Hisa, Yusuke; Rihei, Shunsuke; Shimada, Ryoko; Jeon, Eun Jin; Abe, Junya; Uyeda, Ichiro

2016-01-01

ABSTRACT Peas carrying the cyv1 recessive resistance gene are resistant to clover yellow vein virus (ClYVV) isolates No.30 (Cl-No.30) and 90-1 (Cl-90-1) but can be infected by a derivative of Cl-90-1 (Cl-90-1 Br2). The main determinant for the breaking of cyv1 resistance by Cl-90-1 Br2 is P3N-PIPO produced from the P3 gene via transcriptional slippage, and the higher level of P3N-PIPO produced by Cl-90-1 Br2 than by Cl-No.30 contributes to the breaking of resistance. Here we show that P3N-PIPO is also a major virulence determinant in susceptible peas that possess another resistance gene, Cyn1, which does not inhibit systemic infection with ClYVV but causes hypersensitive reaction-like lethal systemic cell death. We previously assumed that the susceptible pea cultivar PI 226564 has a weak allele of Cyn1. Cl-No.30 did not induce cell death, but Cl-90-1 Br2 killed the plants. Our results suggest that P3N-PIPO is recognized by Cyn1 and induces cell death. Unexpectedly, heterologously strongly expressed P3N-PIPO of Cl-No.30 appears to be recognized by Cyn1 in PI 226564. The level of P3N-PIPO accumulation from the P3 gene of Cl-No.30 was significantly lower than that of Cl-90-1 Br2 in a Nicotiana benthamiana transient assay. Therefore, Cyn1-mediated cell death also appears to be determined by the level of P3N-PIPO. The more efficiently a ClYVV isolate broke cyv1 resistance, the more it induced cell death systemically (resulting in a loss of the environment for virus accumulation) in susceptible peas carrying Cyn1, suggesting that antagonistic pleiotropy of P3N-PIPO controls the resistance breaking of ClYVV. IMPORTANCE Control of plant viral disease has relied on the use of resistant cultivars; however, emerging mutant viruses have broken many types of resistance. Recently, we revealed that Cl-90-1 Br2 breaks the recessive resistance conferred by cyv1, mainly by accumulating a higher level of P3N-PIPO than that of the nonbreaking isolate Cl-No.30. Here we show that a

Vibrational corrections to the second hyperpolarizabilities of Al{sub n}P{sub n} clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feitoza, Luan; Instituto Federal de Brasília–IFB, Campus Planaltina, 73380-900 Brasília, DF; Silveira, Orlando

2015-12-14

In this work, we report results of vibrational corrections to the second hyperpolarizabilities of Al{sub 2}P{sub 2}, Al{sub 3}P{sub 3}, Al{sub 4}P{sub 4}, Al{sub 6}P{sub 6}, and Al{sub 9}P{sub 9} clusters. The vibrational corrections were calculated through the perturbation theoretic method of Bishop and Kirtman and also using a variational methodology at the second order Møller-Plesset perturbation theory level with the aug-cc-pVDZ basis set. Results show that the vibrational corrections are important, accounting for more than half of the corresponding electronic second hyperpolarizabilities at the static limit. Comparisons between results obtained through both methods show very good agreements for themore » terms [α{sup 2}] and [μβ] but significant differences for the term [μ{sup 2}α]. Dynamic vibrational corrections to the second hyperpolarizabilities related to the dc-second harmonic generation, intensity dependent refractive index, and dc-Kerr nonlinear optical processes are also reported.« less

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

NASA Technical Reports Server (NTRS)

Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2007-01-01

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Self-assembling of impurity clusters in AlN:(Ga, BV, CV), (BV, CV = P, As; P, Sb; As, Sb)

NASA Astrophysics Data System (ADS)

Elyukhin, V. A.

2015-11-01

The self-assembling conditions of arrays of tetrahedral impurity clusters of two types in zinc blende AlN:(Ga, BV, CV), (BV, CV = P, As; P, Sb; As, Sb) are represented. Doping with one cation and two anion isoelectronic impurities transforms AlN into AlN-rich GaxAl1-xBVyCVzN1-y-z alloy of GaBV, GaCV, GaN, AlBV, AlCV and AlN. The cause of self-assembling is the preference of GaBV, GaCV and AlN bonding over that of GaN, AlBV, AlCV. The conditions are considered from 0 °C to 1000 °C in the dilute and ultra dilute limits for the cation and anion impurities, correspondingly. The temperature ranges between the cluster occurrence and self-assembling completion when the same anion impurities are in clusters are very small. 1P4Ga and 1As4Ga cluster occurrence temperatures are equal, correspondingly, to 797 °C and 736 °C at Ga content 2% and P and As contents 0.01%. 1P4Ga and 1Sb4Ga cluster occurrence temperatures are equal, correspondingly, to 976 °C and 736 °C at the same impurity contents. The cluster densities in AlN:(Ga, As, Sb) are close to those in AlN:(Ga, P, Sb). The results demonstrate that studied semiconductors are promising materials to produce arrays of identical ∼1 nm low band gap objects of two types embedded in the wide band gap matrix.

Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

NASA Astrophysics Data System (ADS)

Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

2018-03-01

n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV.more » Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.« less

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

NASA Astrophysics Data System (ADS)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

P3N-PIPO, a Frameshift Product from the P3 Gene, Pleiotropically Determines the Virulence of Clover Yellow Vein Virus in both Resistant and Susceptible Peas.

PubMed

Atsumi, Go; Suzuki, Haruka; Miyashita, Yuri; Choi, Sun Hee; Hisa, Yusuke; Rihei, Shunsuke; Shimada, Ryoko; Jeon, Eun Jin; Abe, Junya; Nakahara, Kenji S; Uyeda, Ichiro

2016-08-15

Peas carrying the cyv1 recessive resistance gene are resistant to clover yellow vein virus (ClYVV) isolates No.30 (Cl-No.30) and 90-1 (Cl-90-1) but can be infected by a derivative of Cl-90-1 (Cl-90-1 Br2). The main determinant for the breaking of cyv1 resistance by Cl-90-1 Br2 is P3N-PIPO produced from the P3 gene via transcriptional slippage, and the higher level of P3N-PIPO produced by Cl-90-1 Br2 than by Cl-No.30 contributes to the breaking of resistance. Here we show that P3N-PIPO is also a major virulence determinant in susceptible peas that possess another resistance gene, Cyn1, which does not inhibit systemic infection with ClYVV but causes hypersensitive reaction-like lethal systemic cell death. We previously assumed that the susceptible pea cultivar PI 226564 has a weak allele of Cyn1 Cl-No.30 did not induce cell death, but Cl-90-1 Br2 killed the plants. Our results suggest that P3N-PIPO is recognized by Cyn1 and induces cell death. Unexpectedly, heterologously strongly expressed P3N-PIPO of Cl-No.30 appears to be recognized by Cyn1 in PI 226564. The level of P3N-PIPO accumulation from the P3 gene of Cl-No.30 was significantly lower than that of Cl-90-1 Br2 in a Nicotiana benthamiana transient assay. Therefore, Cyn1-mediated cell death also appears to be determined by the level of P3N-PIPO. The more efficiently a ClYVV isolate broke cyv1 resistance, the more it induced cell death systemically (resulting in a loss of the environment for virus accumulation) in susceptible peas carrying Cyn1, suggesting that antagonistic pleiotropy of P3N-PIPO controls the resistance breaking of ClYVV. Control of plant viral disease has relied on the use of resistant cultivars; however, emerging mutant viruses have broken many types of resistance. Recently, we revealed that Cl-90-1 Br2 breaks the recessive resistance conferred by cyv1, mainly by accumulating a higher level of P3N-PIPO than that of the nonbreaking isolate Cl-No.30. Here we show that a susceptible pea line

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

First-principles prediction of low-energy structures for AlH3

NASA Astrophysics Data System (ADS)

Sun, Shoutian; Ke, Xuezhi; Chen, Changfeng; Tanaka, Isao

2009-01-01

We report density-functional calculations that predict ten different low-energy structures for aluminum hydride AlH3 with space groups Pnma , P6/mmm , I4/mcm , P4/mbm , P4/nmm , Pm3¯m , P21/m , P21/c , Pbcm , and P4/n . Phonon calculations within harmonic approximation reveal unstable modes in the P6/mmm , I4/mcm , P4/mbm , P4/nmm , Pm3¯m , P21/m , and P21/c structures, indicating that they are unstable at low temperatures. The calculations show that the thermodynamic stabilities for AlH3 with space groups Pnma , Pbcm , and P4/n are overall close to the existing α - and γ-AlH3 . From x-ray powder-diffraction patterns, the simulated main-peak positions for AlH3 (P4/n) are in good agreement with experimental δ-AlH3 . A full Rietveld analysis reveals that the fitting space groups R3¯c , Pbcm , and Pnma to the experimental x-ray powder-diffraction pattern of α-AlH3 gives almost the same satisfactory result.

Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunction.

PubMed

Yang, H Y; Yu, S F; Wong, J I; Cen, Z H; Liang, H K; Chen, T P

2011-05-01

Room-temperature random lasing is achieved from an n-AlN/p-GaN heterojunction. The highly disordered n-AlN layer, which was deposited on p-GaN:Mg layer via radio frequency magnetron sputtering, acts as a scattering medium to sustain coherent optical feedback. The p-GaN:Mg layer grown on sapphire provides optical amplification to the scattered light propagating along the heterojunction. Hence, lasing peaks of line width less than 0.4 nm are emerged from the emission spectra at round 370 nm for the heterojunction under forward bias larger than 5.1 V. Lasing characteristics of the heterojunction are in agreement with the behavior of random lasers.

Hybrid diffusion-P3 equation in N-layered turbid media: steady-state domain.

PubMed

Shi, Zhenzhi; Zhao, Huijuan; Xu, Kexin

2011-10-01

This paper discusses light propagation in N-layered turbid media. The hybrid diffusion-P3 equation is solved for an N-layered finite or infinite turbid medium in the steady-state domain for one point source using the extrapolated boundary condition. The Fourier transform formalism is applied to derive the analytical solutions of the fluence rate in Fourier space. Two inverse Fourier transform methods are developed to calculate the fluence rate in real space. In addition, the solutions of the hybrid diffusion-P3 equation are compared to the solutions of the diffusion equation and the Monte Carlo simulation. For the case of small absorption coefficients, the solutions of the N-layered diffusion equation and hybrid diffusion-P3 equation are almost equivalent and are in agreement with the Monte Carlo simulation. For the case of large absorption coefficients, the model of the hybrid diffusion-P3 equation is more precise than that of the diffusion equation. In conclusion, the model of the hybrid diffusion-P3 equation can replace the diffusion equation for modeling light propagation in the N-layered turbid media for a wide range of absorption coefficients.

The {sup 17}F(p,{gamma}){sup 18}Ne3{sup +} resonance state studied with the {sup 16}O({sup 3}He,n){sup 18}Ne reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parpottas, Y.; Grimes, S.M.; Brune, C.R.

2005-08-01

The astrophysically important 3{sup +} resonance of the {sup 17}F(p,{gamma}){sup 18}Ne reaction has been studied with the {sup 16}O({sup 3}He,n){sup 18}Ne reaction. High-resolution measurements were carried out for three different kinematic configurations. We find an excitation energy of 4527(4) keV and a proton width of 17(4) keV for the 3{sup +} state. Measured differential cross sections were compared with Hauser-Feshbach predictions to assign the spin of the 4527-keV state and confirm the spin assignments of the two known levels in this region. Our results differ from the earlier {sup 16}O({sup 3}He,n){sup 18}Ne findings of Garcia et al. [Phys. Rev. Cmore » 43, 2012 (1991)], but they agree well with the {sup 17}F(p,p){sup 17}F measurements of Bardayan et al. [Phys. Rev. C 62, 055804 (2002)].« less

Decoy receptor 3 (DcR3) overexpression predicts the prognosis and pN2 in pancreatic head carcinoma.

PubMed

Zhou, Jian; Song, Shiduo; Li, Dechun; He, Songbing; Zhang, Bing; Wang, Zhenxin; Zhu, Xinguo

2014-03-05

This study was carried out to examine decoy receptor 3 (DcR3) expression and investigate its clinical and prognostic significance in patients with pancreatic head carcinoma. Tissue samples were obtained from 50 patients with pancreatic head carcinoma. DcR3 protein expression in tissues and sera was assessed by immunohistochemistry and ELISA. Correlations between DcR3 and clinicopathologic features and prognoses were analyzed statistically. Serum DcR3 levels were significantly elevated in patients with pancreatic head carcinoma compared with patients with cystadenoma and healthy individuals (P < 0.01 and P < 0.01, respectively). DcR3 overexpression correlated with lymph node metastases and TNM stages (P < 0.05 and P < 0.05, respectively). Median overall survival for the high DcR3 group was 16.3 months, compared to 21.6 months for the low DcR3 group (P < 0.05). In the low DcR3 group, no significant difference was found in the overall survival between patients who underwent standard pancreatoduodenectomy (SPD) and those who had radical pancreatoduodenectomy (RPD) (P > 0.05). In the high DcR3 group, the median overall survival rates were 16.8 months in the RPD group and 13.5 months in the SPD group (P < 0.05). We found that DcR3 was overexpressed in pancreatic head carcinoma. The patients with high DcR3 levels had higher pN2 stages than those with low DcR3 levels. Detecting serum DcR3 level preoperatively might be an additional approach for evaluating pN2 stage and guiding the range of lymphadenectomy.

Effects of P/Ni ratio and Ni content on performance of γ-Al2O3-supported nickel phosphides for deoxygenation of methyl laurate to hydrocarbons

NASA Astrophysics Data System (ADS)

Zhang, Zhena; Tang, Mingxiao; Chen, Jixiang

2016-01-01

γ-Al2O3-supported nickel phosphides (mNi-Pn) were prepared by the TPR method and tested for the deoxygenation of methyl laurate to hydrocarbons. The effects of the P/Ni ratio (n = 1.0-2.5) and Ni content (m = 5-15 wt.%) in the precursors on their structure and performance were investigated. Ni/γ-Al2O3 was also studied for comparison. It was found that the formation of AlPO4 in the precursor inhibited the reduction of phosphate and so the formation of nickel phosphides. With increasing the P/Ni ratio and Ni content, the Ni, Ni3P, Ni12P5 and Ni2P phases orderly formed, accompanying with the increases of their particle size and the amount of weak acid sites (mainly due to P-OH group), while the CO uptake and the amount of medium strong acid sites (mainly related to Ni sites) reached maximum on 10%Ni-P1.5. In the deoxygenation reaction, compared with Ni/γ-Al2O3, the mNi-Pn catalysts showed much lower activities for decarbonylation, Csbnd C hydrogenolysis and methanation due to the ligand and ensemble effects of P. The conversion and the selectivity to n-C11 and n-C12 hydrocarbons achieved maximum on 10%Ni-P 2.0 for the 10%Ni-Pn catalysts and on 8%Ni-P2.0 for the mNi-P2.0 catalysts, while the turnover frequency (TOF) of methyl laurate mainly increased with the P/Ni ratio and Ni content. We propose that TOF was influenced by the nickel phosphide phases, the catalyst acidity and the particle size as well as the synergetic effect between the Ni site and acid site. Again, the hydrodeoxygenation pathway of methyl laurate was promoted with increasing P/Ni ratio and Ni content, ascribed to the phase change in the order of Ni, Ni3P, Ni12P5 and Ni2P in the prepared catalysts.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

PubMed

Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

2016-11-02

Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

Design of n - and p -type oxide thermoelectrics in LaNiO3/SrTiO3(001 ) superlattices exploiting interface polarity

NASA Astrophysics Data System (ADS)

Geisler, Benjamin; Blanca-Romero, Ariadna; Pentcheva, Rossitza

2017-03-01

We investigate the structural, electronic, transport, and thermoelectric properties of LaNiO3/SrTiO3(001 ) superlattices containing either exclusively n - or p -type interfaces or coupled interfaces of opposite polarity by using density functional theory calculations with an on-site Coulomb repulsion term. The results show that significant octahedral tilts are induced in the SrTiO3 part of the superlattice. Moreover, the La-Sr distances and Ni-O out-of-plane bond lengths at the interfaces exhibit a distinct variation by about 7 % with the sign of the electrostatic doping. In contrast to the much studied LaAlO3/SrTiO3 system, the charge mismatch at the interfaces is exclusively accommodated within the LaNiO3 layers, whereas the interface polarity leads to a band offset and to the formation of an electric field within the coupled superlattice. Features of the electronic structure indicate an orbital-selective quantization of quantum well states. The potential- and confinement-induced multiband splitting results in complex cylindrical Fermi surfaces with a tendency towards nesting that depends on the interface polarity. The analysis of the thermoelectric response reveals a particularly large positive Seebeck coefficient (135 μ V /K) and a high figure of merit (0.35) for room-temperature cross-plane transport in the p -type superlattice that is attributed to the participation of the SrTiO3 valence band. Superlattices with either n - or p -type interfaces show cross-plane Seebeck coefficients of opposite sign and thus emerge as a platform to construct an oxide-based thermoelectric generator with structurally and electronically compatible n - and p -type oxide thermoelectrics.

Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

DTIC Science & Technology

2011-10-01

explored the use of in situ deposition of Al2O3 on GaSb grown on InP using molecular beam epitaxy and reported Dit values in the low 1012/cm2eV range near...M. Heyns, M. Caymax, and J. Dekoster, “GaSb mole- cular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide...transmission electron microscopy. Capacitors were made on these films using platinum (Pt) electrode deposited in an e- beam evaporator through a shadow

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.

2014-12-15

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibitsmore » a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.« less

CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

PubMed

Linkohr, St; Pletschen, W; Schwarz, S U; Anzt, J; Cimalla, V; Ambacher, O

2013-02-20

The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures. Copyright © 2012 Elsevier B.V. All rights reserved.

The effect of the complexation of p-N,N-dimethylaminobenzoic acid and p-N,N-dimethylaminobenzonitrile with LaCl3 on spectral-luminescent parameters of fluorophores.

PubMed

Volchkov, Valery V; Ivanov, Vladimir L; Uzhinov, Boris M

2011-03-01

The LE band fluorescence enhancement of p-N,N-dimethylaminobenzoic acid (DMABA) and p-N,N-dimethylaminobenzonitrile (DMABN) was found in aprotic acetonitrile and butyronitrile at the addition of LaCl(3). The corresponding ICT fluorescence band remains unchanged. This enhancement is explained by the decrease of the internal conversion rate constant in a coordination complex with LaCl(3). The formation of the coordination complex between DMABA and LaCl(3) in ethanol is accompanied by the efficient fluorescence quenching in LE and ICT bands, in parallel with the enhancement of ICT/LE emission ratio. The experimental data are well described by the proposed kinetic schemes. © Springer Science+Business Media, LLC 2010

The parity-violating asymmetry in the 3He(n,p)3H reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

M. Viviani, R. Schiavilla, L. Girlanda, A. Kievsky, L.E. Marcucci

2010-10-01

The longitudinal asymmetry induced by parity-violating (PV) components in the nucleon-nucleon potential is studied in the charge-exchange reaction 3He(n,p)3H at vanishing incident neutron energies. An expression for the PV observable is derived in terms of T-matrix elements for transitions from the {2S+1}L_J=1S_0 and 3S_1 states in the incoming n-3He channel to states with J=0 and 1 in the outgoing p-3H channel. The T-matrix elements involving PV transitions are obtained in first-order perturbation theory in the hadronic weak-interaction potential, while those connecting states of the same parity are derived from solutions of the strong-interaction Hamiltonian with the hyperspherical-harmonics method. The coupled-channelmore » nature of the scattering problem is fully accounted for. Results are obtained corresponding to realistic or chiral two- and three-nucleon strong-interaction potentials in combination with either the DDH or pionless EFT model for the weak-interaction potential. The asymmetries, predicted with PV pion and vector-meson coupling constants corresponding (essentially) to the DDH "best values" set, range from -9.44 to -2.48 in units of 10^{-8}, depending on the input strong-interaction Hamiltonian. This large model dependence is a consequence of cancellations between long-range (pion) and short-range (vector-meson) contributions, and is of course sensitive to the assumed values for the PV coupling constants.« less

Transition probabilities for the 3s2 3p(2P0)-3s3p2(4P) intersystem lines of Si II

NASA Technical Reports Server (NTRS)

Calamai, Anthony G.; Smith, Peter L.; Bergeson, S. D.

1993-01-01

Intensity ratios of lines of the spin-changing 'intersystem' multiplet of S II (4P yields 2P0) at 234 nm have been used to determine electron densities and temperatures in a variety of astrophysical environments. However, the accuracy of these diagnostic calculations have been limited by uncertainties associated with the available atomic data. We report the first laboratory measurement, using an ion-trapping technique, of the radiative lifetimes of the three metastable levels of the 3s3p2 4P term of Si II. Our results are 104 +/- 16, 406 +/- 33, and 811 +/- 77 micro-s for lifetimes of the J = 1/2, 5/2, and 3/2 levels, respectively. A-values were derived from our lifetimes by use of measured branching fractions. Our A-values, which differ from calculated values by 30 percent or more, should give better agreement between modeled and observed Si II line ratios.

Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

NASA Astrophysics Data System (ADS)

Ling, Bo; Zhao, Jun Liang; Sun, Xiao Wei; Tan, Swee Tiam; Kyaw, Aung Ko Ko; Divayana, Yoga; Dong, Zhi Li

2010-07-01

Wide-range color tuning from red to blue was achieved in phosphor-free p+-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p+-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p+-Si/p-CuAlO2 substrates by vapor phase transport. The color of the p-CuAlO2/n-ZnO nanorod array heterojunction electroluminescence depended on the annealing temperature of the CuAlO2 film. With the increase of the annealing temperature from 900 to 1050 °C, the emission showed a blueshift under the same forward bias. The origin of the blueshift is related to the amount of Cu concentration diffused into ZnO.

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn3N2

NASA Astrophysics Data System (ADS)

Zhang, Bin; Li, Min; Wang, Jian-Zhong; Shi, Li-Qun

2013-02-01

We prepare p-type ZnO:N films by annealing Zn3N2 films in oxygen over a range of temperatures. The prepared films are characterized by various techniques, such as Rutherford backscattering spectroscopy, x-ray diffraction, x-ray photoemission spectroscopy, the Hall effect and photoluminescence spectra. The results show that the Zn3N2 films start to transform to ZnO at 300°C and the N content decreases with an increase in annealing temperature. N has two local chemical states: zinc oxynitride (ZnO1-xNx) and substitutional NO in O-rich local environments (α -NO). The conduction type changes from n-type to p-type upon oxidation at 400-600°C, indicating that N is an effective acceptor in the ZnO film. The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films. The mechanism and efficiency of p-type doping are briefly discussed.

Separated oscillatory field microwave measurement of the n=2 3P1 to n=2 3P2 fine-structure interval of helium

NASA Astrophysics Data System (ADS)

Borbely, Joseph S.

2009-11-01

The fine-structure constant is a fundamental constant of nature that represents the strength of the coupling interaction between charged particles. Comparison of high-precision theory and high-precision experiment of the n=2 3PJ fine-structure intervals of helium will allow for a determination of the fine-structure constant. The 23P1(mJ=0)-to-23P 2(mJ=0) magnetic-dipole transition in helium is measured to be 2 291 177.53(35) kHz using Ramsey separated oscillatory fields. A thermal beam of 23S1 metastable helium atoms is produced in a DC discharge source and enters a chamber where a vertical DC magnetic field lifts the degeneracy of the mJ states. Initially, the 2 3S1(mJ=-1, 0, 1) states are equally populated. A linearly polarized 1083-nm diode laser drives the 23S 1(mJ=0) atoms up to the 23P0(m J=0) state, emptying the 23S1(mJ=0) state. A 15-ns laser pulse drives the 23S1(m J=+1)-to-23P1(mJ=0) transitions and this laser pulse is followed by two microwave pulses that drive the 2.29-GHz 23P1(mJ=0)-to-23P 2(mJ=0) transition. The atoms which undergo this microwave transition can spontaneously decay to the previously-emptied 23S 1(mJ=0) state. The 23P1(m J=0) state is forbidden to decay to the 23S1(m J=0) state since the transition has a zero electric-dipole matrix element. Therefore, any re-population of the 23S1(m J=0) state is a direct indication that the 2.29-GHz microwave transition has been driven. A linearly polarized 1083-nm diode laser detects the 2 3S1(mJ=0) atoms by exciting them up to the 2 3P0(mJ=0) state and the radiation from the resulting spontaneous decay is observed by focusing it onto a liquid-nitrogen-cooled InGaAs photodiode. The two microwave pulses are alternatively in phase or 180°out of phase and the difference of these signals versus microwave frequency leads to a Ramsey separated oscillatory field interference pattern.

A low insertion loss GaAs pHEMT switch utilizing dual n +-doping AlAs etching stop layers design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Lin, Da-Wei; Yang, Chih-Wei; Fu, Jeffrey S.; Chiu, Hsien-Chin

2010-03-01

A low insertion loss single-pole-single-throw (SPST) pseudomorphic high electron mobility transistor (pHEMT) switch utilizing the n +-type doping in AlAs etching stop layer was fabricated and investigated. This novel design reduces device sheet resistance resulting in an improvement of dc and rf power performance. In addition, the gate recess selectivity for GaAs/AlAs interface was not sacrificed after highly n +-type doping in AlAs etching stop layer. The pHEMT with n +-AlAs etching stop layer, also named Modified pHEMT (M-pHEMT), demonstrated a lower sheet resistance ( Rsh) of 65.9 Ω/γ, a higher maximum drain-to-source current ( Idmax) of 317.8 mA/mm and a higher peak transconductance ( gm) of 259.3 mS/mm which are superior to standard pHEMT performance with values of 71.9 Ω/γ, 290.3 mA/mm and 252.1 mS/mm, respectively. Due to a significant sheet resistance improvement from this novel epitaxial design, an SPST pHEMT switch was realized to manifest its industrial application potential. The results achieved an on-state insertion loss of 1.42 dB, an off-state isolation of 13.02 dB at 0.9 GHz, which were superior to traditional pHEMT switch under same condition of operation with values of 1.68 dB and 11.42 dB, respectively. It is proved that dual n +-doping AlAs etching stop layers scheme is beneficial for low loss microwave switches applications.

High thermally stable Ni /Ag(Al) alloy contacts on p-GaN

NASA Astrophysics Data System (ADS)

Chou, C. H.; Lin, C. L.; Chuang, Y. C.; Bor, H. Y.; Liu, C. Y.

2007-01-01

Ag agglomeration was found to occur at Ni /Ag to p-GaN contacts after annealing at 500°C. This Ag agglomeration led to the poor thermal stability showed by the Ni /Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10at.% Al by e-gun deposition, the Ni /Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

High thermally stable Ni/Ag(Al) alloy contacts on p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, C. H.; Lin, C. L.; Chuang, Y. C.

2007-01-08

Ag agglomeration was found to occur at Ni/Ag to p-GaN contacts after annealing at 500 degree sign C. This Ag agglomeration led to the poor thermal stability showed by the Ni/Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the Ni/Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

The cortical generators of P3a and P3b: a LORETA study.

PubMed

Volpe, U; Mucci, A; Bucci, P; Merlotti, E; Galderisi, S; Maj, M

2007-07-12

The P3 is probably the most well known component of the brain event-related potentials (ERPs). Using a three-tone oddball paradigm two different components can be identified: the P3b elicited by rare target stimuli and the P3a elicited by the presentation of rare non-target stimuli. Although the two components may partially overlap in time and space, they have a different scalp topography suggesting different neural generators. The present study is aimed at defining the scalp topography of the two P3 components by means of reference-independent methods and identifying their electrical cortical generators by using the low-resolution electromagnetic tomography (LORETA). ERPs were recorded during a three-tone oddball task in 32 healthy, right-handed university students. The scalp topography of the P3 components was assessed by means of the brain electrical microstates technique and their cortical sources were evaluated by LORETA. P3a and P3b showed different scalp topography and cortical sources. The P3a electrical field had a more anterior distribution as compared to the P3b and its generators were localized in cingulate, frontal and right parietal areas. P3b sources included bilateral frontal, parietal, limbic, cingulate and temporo-occipital regions. Differences in scalp topography and cortical sources suggest that the two components reflect different neural processes. Our findings on cortical generators are in line with the hypothesis that P3a reflects the automatic allocation of attention, while P3b is related to the effortful processing of task-relevant events.

Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer.

PubMed

Lee, Junyeong; Hwang, Hyuncheol; Min, Sung-Wook; Shin, Jae Min; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2015-01-28

Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

Subtype-specific regulation of P2X3 and P2X2/3 receptors by phosphoinositides in peripheral nociceptors

PubMed Central

Mo, Gary; Bernier, Louis-Philippe; Zhao, Qi; Chabot-Doré, Anne-Julie; Ase, Ariel R; Logothetis, Diomedes; Cao, Chang-Qing; Séguéla, Philippe

2009-01-01

Background P2X3 and P2X2/3 purinergic receptor-channels, expressed in primary sensory neurons that mediate nociception, have been implicated in neuropathic and inflammatory pain responses. The phospholipids phosphatidylinositol 4,5-bisphosphate (PIP2) and phosphatidylinositol 3,4,5-trisphosphate (PIP3) are involved in functional modulation of several types of ion channels. We report here evidence that these phospholipids are able to modulate the function of homomeric P2X3 and heteromeric P2X2/3 purinoceptors expressed in dorsal root ganglion (DRG) nociceptors and in heterologous expression systems. Results In dissociated rat DRG neurons, incubation with the PI3K/PI4K inhibitor wortmannin at 35 μM induced a dramatic decrease in the amplitude of ATP- or α,β-meATP-evoked P2X3 currents, while incubation with 100 nM wortmannin (selective PI3K inhibition) produced no significant effect. Intracellular application of PIP2 was able to fully reverse the inhibition of P2X3 currents induced by wortmannin. In Xenopus oocytes and in HEK293 cells expressing recombinant P2X3, 35 μM wortmannin incubation induced a significant decrease in the rate of receptor recovery. Native and recombinant P2X2/3 receptor-mediated currents were inhibited by incubation with wortmannin both at 35 μM and 100 nM. The decrease of P2X2/3 current amplitude induced by wortmannin could be partially reversed by application of PIP2 or PIP3, indicating a sensitivity to both phosphoinositides in DRG neurons and Xenopus oocytes. Using a lipid binding assay, we demonstrate that the C-terminus of the P2X2 subunit binds directly to PIP2, PIP3 and other phosphoinositides. In contrast, no direct binding was detected between the C-terminus of P2X3 subunit and phosphoinositides. Conclusion Our findings indicate a functional regulation of homomeric P2X3 and heteromeric P2X2/3 ATP receptors by phosphoinositides in the plasma membrane of DRG nociceptors, based on subtype-specific mechanisms of direct and indirect

Sequestosome 1/p62 links familial ALS mutant SOD1 to LC3 via an ubiquitin-independent mechanism.

PubMed

Gal, Jozsef; Ström, Anna-Lena; Kwinter, David M; Kilty, Renée; Zhang, Jiayu; Shi, Ping; Fu, Weisi; Wooten, Marie W; Zhu, Haining

2009-11-01

The p62/sequestosome 1 protein has been identified as a component of pathological protein inclusions in neurodegenerative diseases including amyotrophic lateral sclerosis (ALS). P62 has also been implicated in autophagy, a process of mass degradation of intracellular proteins and organelles. Autophagy is a critical pathway for degrading misfolded and/or damaged proteins, including the copper-zinc superoxide dismutase (SOD1) mutants linked to familial ALS. We previously reported that p62 interacted with ALS mutants of SOD1 and that the ubiquitin-association domain of p62 was dispensable for the interaction. In this study, we identified two distinct regions of p62 that were essential to its binding to mutant SOD1: the N-terminal Phox and Bem1 (PB1) domain (residues 1-104) and a separate internal region (residues 178-224) termed here as SOD1 mutant interaction region (SMIR). The PB1 domain is required for appropriate oligomeric status of p62 and the SMIR is the actual region interacting with mutant SOD1. Within the SMIR, the conserved W184, H190 and positively charged R183, R186, K187, and K189 residues are critical to the p62-mutant SOD1 interaction as substitution of these residues with alanine resulted in significantly abolished binding. In addition, SMIR and the p62 sequence responsible for the interaction with LC3, a protein essential for autophagy activation, are independent of each other. In cells lacking p62, the existence of mutant SOD1 in acidic autolysosomes decreased, suggesting that p62 can function as an adaptor between mutant SOD1 and the autophagy machinery. This study provides a novel molecular mechanism by which mutant SOD1 can be recognized by p62 in an ubiquitin-independent fashion and targeted for the autophagy-lysosome degradation pathway.

New polymer for removal of wine phenolics: Poly(N-(3-(N-isobutyrylisobutyramido)-3-oxopropyl)acrylamide) (P-NIOA).

PubMed

Castro, Ricardo I; Forero-Doria, Oscar; Guzmán, Luis; Laurie, V Felipe; Valdés, Oscar; Ávila-Salas, Fabián; López-Cortés, Xaviera; Santos, Leonardo S

2016-12-15

The phenolic compounds of wine contribute to color and astringency, also are responsible for the oxidation state and bitterness. Due the importance of these molecules, different techniques have been used to modulate their concentration such as natural or synthetic polymeric agents. Among the polymeric agents, PVPP is one of the most used, but lacks of selectivity and has a limited pH range. Therefore, the aim of this study was the synthesis of a new polymer, poly(N-(3-(N-isobutyrylisobutyramido)-3-oxopropyl)acrylamide) (P-NIOA), for removal of phenolic compounds, as a potential agent for the fining of wine. The new polymer affinity was studied using HPLC-DAD for different polyphenols using PVPP as a control. The results showed that the new polymer has a similar removal as PVPP, but with lower affinity to resveratrol. The interactions established between polymers and polyphenols were studied using computational chemistry methods demonstrating a direct correlation with the experimental affinity data. Copyright © 2016 Elsevier Ltd. All rights reserved.

The PapG-adhesin at the tip of P-fimbriae provides Escherichia coli with a competitive edge in experimental bladder infections of cynomolgus monkeys

PubMed Central

1995-01-01

Human urinary tract infection is an infectious disease that depends on a series of host-microbial interactions. The bacteria first colonize the colon and then the periurethral/vaginal areas; they ascend to and infect first the bladder and then the kidneys. Expression of Escherichia coli P-fimbriae constitutes the strongest correlation to renal pathogenicity, but is also related to first-time cystitis in children. The role of P-fimbriae in the preceding steps in the infectious process is unknown. To examine this, we constructed, from a P-fimbriated E. coli strain with a class II G-adhesin preferentially binding to globoside, one isogenic mutant lacking the G-adhesin and another isogenic mutant in which we replaced the papG class II allele with a class III adhesin preferentially binding to the Forssman antigen. We report here the comparison of the adhesin knockout mutant (DS17-8) and the class-switch mutant (DS17-1) with the wild-type (DS17) for in vivo colonization of the gut, vagina, and bladder of cynomolgus monkeys. It was recently shown that the class II tip G-adhesin is a prerequisite for acute pyelonephritis to occur in the monkey model in the absence of other kidney-specific adhesins or obstruction of the urinary flow. Here we show that it is not required for bladder infection but gives a competitive advantage in mixed infections. In the vagina and colon, the G-adhesin gives no competitive advantage. PMID:7500014

A P-H functionalized Al/P-based frustrated Lewis pair - hydrophosphination of nitriles, ring opening with cyclopropenones and evidence of P[double bond, length as m-dash]C double bond formation.

PubMed

Keweloh, Lukas; Aders, Niklas; Hepp, Alexander; Pleschka, Damian; Würthwein, Ernst-Ulrich; Uhl, Werner

2018-06-12

Hydroalumination of R-P(H)-C[triple bond, length as m-dash]C-tBu with bulky H-Al[CH(SiMe3)2]2 afforded the new P-H functionalized Al/P-based frustrated Lewis pair R-P(H)-C[[double bond, length as m-dash]C(H)-tBu]-AlR2 [R = CH(SiMe3)2; FLP 7]. A weak adduct of 7 with benzonitrile (8) was detected by NMR spectroscopy, but could not be isolated. tert-Butyl isocyanide afforded a similar, but isolable adduct (9), in which the isocyanide C atom was coordinated to aluminium. The unique reactivity of 7 became evident from its reactions with the heteroatom substituted nitriles PhO-C[triple bond, length as m-dash]N, PhCH2S-C[triple bond, length as m-dash]N and H8C4N-C[triple bond, length as m-dash]N. Hydrophosphination of the C[triple bond, length as m-dash]N triple bonds afforded imines at room temperature which were coordinated to the FLP by Al-N and P-C bonds to yield AlCPCN heterocycles (10 to 12). These processes depend on substrate activation by the FLP. Diphenylcyclopropenone and its sulphur derivative reacted with 7 by addition of the P-H bond to a C-C bond of the strained C3 ring and ring opening to afford the fragment (Z)-Ph-C(H)[double bond, length as m-dash]C(Ph)-C-X-Al (X = O, S). The C-O or C-S groups were coordinated to the FLP to yield AlCPCX heterocycles (13 and 14). The thiocarbonyl derived compound 14 contains an internally stabilized phosphenium cation with a localized P[double bond, length as m-dash]C bond, a trigonal planar coordinated P atom and a short P[double bond, length as m-dash]C distance (168.9 pm). Insight into formation mechanisms, the structural and energetic properties of FLP 7 and compounds 13 and 14 was gained by quantum chemical DFT calculations.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

The N2-P3 complex of the evoked potential and human performance

NASA Technical Reports Server (NTRS)

Odonnell, Brian F.; Cohen, Ronald A.

1988-01-01

The N2-P3 complex and other endogenous components of human evoked potential provide a set of tools for the investigation of human perceptual and cognitive processes. These multidimensional measures of central nervous system bioelectrical activity respond to a variety of environmental and internal factors which have been experimentally characterized. Their application to the analysis of human performance in naturalistic task environments is just beginning. Converging evidence suggests that the N2-P3 complex reflects processes of stimulus evaluation, perceptual resource allocation, and decision making that proceed in parallel, rather than in series, with response generation. Utilization of these EP components may provide insights into the central nervous system mechanisms modulating task performance unavailable from behavioral measures alone. The sensitivity of the N2-P3 complex to neuropathology, psychopathology, and pharmacological manipulation suggests that these components might provide sensitive markers for the effects of environmental stressors on the human central nervous system.

Chromatographic determination of Fe chelated by ethylenediamine-N-(o-hydroxyphenylacetic)-N'-(p-hydroxyphenylacetic) acid in commercial EDDHA/Fe3+ fertilizers.

PubMed

García-Marco, Sonia; Torreblanca, Ana; Lucena, Juan J

2006-02-22

EDDHA/Fe3+ chelates are the most common fertilizers used to solve Fe chlorosis in established crops. Commercial products contain two regioisomers, ethylenediamine-N,N'-bis(o-hydroxyphenylacetic) acid (o,o-EDDHA)/Fe3+ and ethylenediamine-N-(o-hydroxyphenylacetic)-N'-(p-hydroxyphenylacetic) acid (o,p-EDDHA)/Fe3+. Although several chromatographic methods exist for the determination of Fe3+ chelated by the o,o-EDDHA isomer, no method has been described for the quantification of Fe3+ chelated by o,p-EDDHA. In this work, factors that affect the behavior of o,p-EDDHA/Fe3+ in ion pair chromatography are reviewed: pH, ion pair reagent, and organic modifier. The best chromatographic performance was obtained with an aqueous mobile phase at pH 6.0 containing 35% acetonitrile and 5 mM tetrabutylammonium hydroxide under isocratic elution conditions. This method was applied to the quantification of commercial samples.

Corrosion Behavior and Microhardness of Ni-P-SiO2-Al2O3 Nano-composite Coatings on Magnesium Alloy

NASA Astrophysics Data System (ADS)

Sadreddini, S.; Rahemi Ardakani, S.; Rassaee, H.

2017-05-01

In the present work, nano-composites of Ni-P-SiO2-Al2O3 were coated on AZ91HP magnesium alloy. The surface morphology of the nano-composite coating was studied by field emission scanning electron microscopy (FESEM). The amount of SiO2 in the coating was determined by energy-dispersive analysis of x-ray (EDX), and the crystalline structure of the coating was examined by x-ray diffractometer (XRD). All the experiments concerning the corrosion behavior of the coating carried out in 3.5 wt.% NaCl solution and evaluated by electrochemical impedance spectroscopy (EIS) and polarization technique. The results showed that an incorporation of SiO2 and Al2O3 in Ni-P coating at the SiO2 concentration of 10 g/Land 14 g/LAl2O3 led to the lowest corrosion rate ( i corr = 1.3 µA/cm2), the most positive E corr and maximum microhardness (496 VH). Furthermore, Ni-P-SiO2-Al2O3 nano-composite coating possesses less porosity than that in Ni-P coating, resulting in improving corrosion resistance.

Tululite, Ca14(Fe3+,Al)(Al,Zn,Fe3+,Si,P,Mn,Mg)15O36: a new Ca zincate-aluminate from combustion metamorphic marbles, central Jordan

NASA Astrophysics Data System (ADS)

Khoury, Hani N.; Sokol, Ella V.; Kokh, Svetlana N.; Seryotkin, Yurii V.; Nigmatulina, Elena N.; Goryainov, Sergei V.; Belogub, Elena V.; Clark, Ian D.

2016-02-01

Tululite (Ca14(Fe3+,Al)(Al,Zn,Fe3+,Si,P,Mn,Mg)15O36 (the hypothetical end-member formula Ca14{Fe3+O6}[SiO4][Zn5Al9]O26) (IMA2014-065) is a new natural Ca zincate-aluminate, identified in medium-temperature (800-850 °C) combustion metamorphic (CM) spurrite-fluorellestadite marbles from central Jordan. The type locality (Tulul Al Hammam area) is situated in the northern part of the Siwaqa complex, the largest area of the "Mottled Zone" Formation in the Dead Sea region. The marbles originated from bitumen-rich chalky marine sediments of the Maastrichtian-Paleogene Muwaqqar Chalk Marl Formation, which have low clay content (and, consequently, low Al) and high Zn, Cd, and U enrichments. The bulk CM rocks derived from the low-Al protolith have unusually high (Zn + Cd)/Al ratios ( 0.2) and, as a result, a mineralogy with negligibly small percentages of Ca aluminates having low Ca:Al molar ratios (minerals of mayenite supergroup, Ca:Al = 6:7) common to most of calcareous CM rocks in the Mottled Zone. Instead, the mineral assemblage of the Zn-rich marbles contains tululite, with high Ca:Al = 2.55 molar ratios and Zn substituting for a large portion of Al (Zn:Al = 1.1). Tululite occurs in thin clusters as irregular grains with indented outlines (20-100 μm in size), having typical open-work textures associated with rock-forming calcite, fluorellestadite, spurrite, and accessory Zn-rich periclase, lime-monteponite solid solutions, calcium uranates, and zincite. Marbles also bear brownmillerite, dorrite, fluormayenite, high-fluorine Ca aluminate, and lakargiite. Secondary phases are brucite, gel-like calcium silicate hydrates and calcium silicate aluminate hydrates, including Zn- and U-bearing and Cd-rich compounds, Si-bearing hydrated compounds after calcium uranates, and basic Cd chlorides. The empirical formula of the holotype tululite (a mean of 32 analyses) is (Ca13.29Cd0.75)Σ14.04(Al5.46Zn5.20Fe3+ 2.23Si0.95Mn3+ 1.01Mg0.78P0.41)Σ16.04O36. Tululite is cubic, space

Stimulus-to-matching-stimulus interval influences N1, P2, and P3b in an equiprobable Go/NoGo task.

PubMed

Steiner, Genevieve Z; Barry, Robert J; Gonsalvez, Craig J

2014-10-01

Previous research has shown that as the stimulus-to-matching-stimulus interval (including the target-to-target interval, TTI, and nontarget-to-nontarget interval, NNI) increases, the amplitude of the P300 ERP component increases systematically. Here, we extended previous P300 research and explored TTI and NNI effects on the various ERP components elicited in an auditory equiprobable Go/NoGo task. We also examined whether a similar mechanism was underpinning interval effects in early ERP components (e.g., N1). Thirty participants completed a specially-designed variable-ISI equiprobable task whilst their EEG activity was recorded. Component amplitudes were extracted using temporal PCA with unrestricted Varimax rotation. As expected, N1, P2, and P3b amplitudes increased as TTI and NNI increased, however, Processing Negativity (PN) and Slow Wave (SW) did not show the same systematic change with interval increments. To determine the origin of interval effects in sequential processing, a multiple regression analysis was conducted on each ERP component including stimulus type, interval, and all preceding components as predictors. These analyses showed that matching-stimulus interval predicted N1, P3b, and weakly predicted P2, but not PN or SW; SW was determined by P3b only. These results suggest that N1, P3b, and to some extent, P2, are affected by a similar temporal mechanism. However, the dissimilar pattern of results obtained for sequential ERP components indicates that matching-stimulus intervals are not affecting all aspects of stimulus processing. This argues against a global mechanism, such as a pathway-specific refractory effect, and suggests that stimulus processing is occurring in parallel pathways, some of which are not affected by temporal manipulations of matching-stimulus interval. Copyright © 2014 Elsevier B.V. All rights reserved.

Neuropharmacology of Purinergic Receptors in Human Submucous Plexus: Involvement of P2X1, P2X2, P2X3 Channels, P2Y and A3 Metabotropic Receptors in Neurotransmission

PubMed Central

Liñán-Rico, A.; Wunderlich, JE.; Enneking, JT.; Tso, DR.; Grants, I.; Williams, KC.; Otey, A.; Michel, K.; Schemann, M.; Needleman, B.; Harzman, A.; Christofi, FL.

2015-01-01

Rationale The role of purinergic signaling in the human ENS is not well understood. We sought to further characterize the neuropharmacology of purinergic receptors in human ENS and test the hypothesis that endogenous purines are critical regulators of neurotransmission. Experimental Approach LSCM-Fluo-4-(Ca2+)-imaging of postsynaptic Ca2+ transients (PSCaTs) was used as a reporter of neural activity. Synaptic transmission was evoked by fiber tract electrical stimulation in human SMP surgical preparations. Pharmacological analysis of purinergic signaling was done in 1,556 neurons from 234 separate ganglia 107 patients; immunochemical labeling for P2XRs of neurons in ganglia from 19 patients. Real-time MSORT (Di-8-ANEPPS) imaging was used to test effects of adenosine on fast excitatory synaptic potentials (fEPSPs). Results Synaptic transmission is sensitive to pharmacological manipulations that alter accumulation of extracellular purines. Apyrase blocks PSCaTs in a majority of neurons. An ecto-NTPDase-inhibitor 6-N,N-diethyl-D-β,γ-dibromomethyleneATP or adenosine deaminase augments PSCaTs. Blockade of reuptake/deamination of eADO inhibits PSCaTs. Adenosine inhibits fEPSPs and PSCaTs (IC50=25μM), sensitive to MRS1220-antagonism (A3AR). A P2Y agonist ADPβS inhibits PSCaTs (IC50=111nM) in neurons without stimulatory ADPβS responses (EC50=960nM). ATP or a P2X1,2,2/3 (α,β-MeATP) agonist evokes fast, slow, biphasic Ca2+ transients or Ca2+ oscillations (EC50=400μM). PSCaTs are sensitive to P2X1 antagonist NF279. Low (20nM) or high (5μM) concentrations of P2X antagonist TNP-ATP block PSCaTs in different neurons; proportions of neurons with P2XR-ir follow the order P2X2>P2X1≫P2X3; P2X1+ P2X2 and P2X3+P2X2 are co-localized. RT-PCR identified mRNA-transcripts for P2X1-7,P2Y1,2,12-14R. Responsive neurons were also identified by HuC/D-ir. Conclusions Purines are critical regulators of neurotransmission in the human enteric nervous system. Purinergic signaling involves

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

P dopants induced ferromagnetism in g-C3N4 nanosheets: Experiments and calculations

NASA Astrophysics Data System (ADS)

Liu, Yonggang; Liu, Peitao; Sun, Changqi; Wang, Tongtong; Tao, Kun; Gao, Daqiang

2017-05-01

Outstanding magnetic properties are highly desired for two-dimensional (2D) semiconductor nanosheets due to their potential applications in spintronics. Metal-free ferromagnetic 2D materials whose magnetism originated from the pure s/p electron configuration could give a long spin relaxation time, which plays the vital role in spin information transfer. Here, we synthesize 2D g-C3N4 nanosheets with room temperature ferromagnetism induced by P doping. In our case, the Curie temperature of P doped g-C3N4 nanosheets reaches as high as 911 K and the precise control of the P concentration can further adjust the saturation magnetization of the samples. First principles calculation results indicate that the magnetic moment is primarily due to strong hybridization between p bonds of P, N, and C atoms, giving the theoretical evidence of the ferromagnetism. This work opens another door to engineer a future generation of spintronic devices.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

NASA Astrophysics Data System (ADS)

Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

2016-04-01

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ~ 4,2 10-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1 10-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark.

Obtaining P3P Privacy Policies for Composite Services

PubMed Central

Sun, Yi; Huang, Zhiqiu; Ke, Changbo

2014-01-01

With the development of web services technology, web services have changed from single to composite services. Privacy protection in composite services is becoming an important issue. P3P (platform for privacy preferences) is a privacy policy language which was designed for single web services. It enables service providers to express how they will deal with the privacy information of service consumers. In order to solve the problem that P3P cannot be applied to composite services directly, we propose a method to obtain P3P privacy policies for composite services. In this method, we present the definitions of Purpose, Recipient, and Retention elements as well as Optional and Required attributes for P3P policies of composite services. We also provide an instantiation to illustrate the feasibility of the method. PMID:25126609

Obtaining P3P privacy policies for composite services.

PubMed

Sun, Yi; Huang, Zhiqiu; Ke, Changbo

2014-01-01

With the development of web services technology, web services have changed from single to composite services. Privacy protection in composite services is becoming an important issue. P3P (platform for privacy preferences) is a privacy policy language which was designed for single web services. It enables service providers to express how they will deal with the privacy information of service consumers. In order to solve the problem that P3P cannot be applied to composite services directly, we propose a method to obtain P3P privacy policies for composite services. In this method, we present the definitions of Purpose, Recipient, and Retention elements as well as Optional and Required attributes for P3P policies of composite services. We also provide an instantiation to illustrate the feasibility of the method.

Auditory P3a and P3b neural generators in schizophrenia: An adaptive sLORETA P300 localization approach.

PubMed

Bachiller, Alejandro; Romero, Sergio; Molina, Vicente; Alonso, Joan F; Mañanas, Miguel A; Poza, Jesús; Hornero, Roberto

2015-12-01

The present study investigates the neural substrates underlying cognitive processing in schizophrenia (Sz) patients. To this end, an auditory 3-stimulus oddball paradigm was used to identify P3a and P3b components, elicited by rare-distractor and rare-target tones, respectively. Event-related potentials (ERP) were recorded from 31 Sz patients and 38 healthy controls. The P3a and P3b brain-source generators were identified by time-averaging of low-resolution brain electromagnetic tomography (LORETA) current density images. In contrast with the commonly used fixed window of interest (WOI), we proposed to apply an adaptive WOI, which takes into account subjects' P300 latency variability. Our results showed different P3a and P3b source activation patterns in both groups. P3b sources included frontal, parietal and limbic lobes, whereas P3a response generators were localized over bilateral frontal and superior temporal regions. These areas have been related to the discrimination of auditory stimulus and to the inhibition (P3a) or the initiation (P3b) of motor response in a cognitive task. In addition, differences in source localization between Sz and control groups were observed. Sz patients showed lower P3b source activity in bilateral frontal structures and the cingulate. P3a generators were less widespread for Sz patients than for controls in right superior, medial and middle frontal gyrus. Our findings suggest that target and distractor processing involves distinct attentional subsystems, both being altered in Sz. Hence, the study of neuroelectric brain information can provide further insights to understand cognitive processes and underlying mechanisms in Sz. Copyright © 2015 Elsevier B.V. All rights reserved.

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Effect of compressive stress on stability of N-doped p-type ZnO

NASA Astrophysics Data System (ADS)

Chen, Xingyou; Zhang, Zhenzhong; Yao, Bin; Jiang, Mingming; Wang, Shuangpeng; Li, Binghui; Shan, Chongxin; Liu, Lei; Zhao, Dongxu; Shen, Dezhen

2011-08-01

Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the p-type ZnO:N on c-Al2O3 degenerated into n-type after a preservation time; however, the one grown on a-Al2O3 showed good stability. The conversion of conductivity in the one grown on c-Al2O3 ascribed to the faster disappearance of NO and the growing N2(O), which is demonstrated by x-ray photoelectron spectroscopy (XPS). Compressive stress, caused by lattice misfit, was revealed by Raman spectra and optical absorption spectra, and it was regarded as the root of the instability in ZnO:N.

An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Chen; Zhang, Kelvin H. L.

2017-08-07

Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO 3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

An alanine residue in human parainfluenza virus type 3 phosphoprotein is critical for restricting excessive N0-P interaction and maintaining N solubility.

PubMed

Zhang, Shengwei; Cheng, Qi; Luo, Chenxi; Yin, Lei; Qin, Yali; Chen, Mingzhou

2018-05-01

The phosphoprotein (P) of human parainfluenza virus type 3 (HPIV3) plays a pivotal role in viral RNA synthesis, which interacts with the nucleoprotein (N) to form a soluble N 0 -P complex (N 0 , free of RNAs) to prevent the nonspecific RNA binding and illegitimate aggregation of N. Functional regions within P have been studied intensively. However, the precise site (s) within P directly involved in N 0 -P interaction still remains unclear. In this study, using a series of deleted and truncated mutants of P of HPIV3, we demonstrate that amino-terminal 40 amino acids (aa) of P restrict and regulate N 0 -P interaction. Furthermore, using in vivo HPIV3 minigenome replicon assay, we identify a critical P mutant (P A28P ) located in amino-terminal 40 aa, which fails to support RNA synthesis of HPIV3 minigenome replicon. Although P A28P maintains an enhanced N-P interaction, it is unable to form N 0 -P complex and keep N soluble, thus, resulting in aggregation and functional abolishment of N-P complex. Moreover, we found that recombinant HPIV3 with mutation of A28P in P failed to be rescued. Taken together, we identified a residue within the extreme amino-terminus of P, which plays a critical role in restricting the excessively N-P interaction and keeping a functional N 0 -P complex formation. Copyright © 2018 Elsevier Inc. All rights reserved.

Radiative Properties of Ceramic Al2O3, AlN and Si3N4—II: Modeling

NASA Astrophysics Data System (ADS)

Yang, Peiyan; Cheng, Qiang; Zhang, Zhuomin

2017-08-01

In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and transmittance of dense ceramic plates were measured at wavelengths from 0.4 μm to about 20 μm. The samples of Al2O3 and AlN are semitransparent in the wavelength region from 0.4 μm to about 7 μm, where volume scattering dominates the absorption and scattering behaviors. On the other hand, the Si3N4 plate is opaque in the whole wavelength region. In the mid-infrared region, all samples show phonon vibration bands and surface reflection appears to be strong. The present study focuses on modeling the radiative properties and uses an inverse method to obtain the scattering and absorption coefficients of Al2O3 and AlN in the semitransparent region from the measured directional-hemispherical reflectance and transmittance. The scattering coefficient is also predicted using Mie theory for comparison. The Lorentz oscillator model is applied to fit the reflectance spectra of AlN and Si3N4 from 1.6 μm to 20 μm in order to obtain their optical constants. It is found that the phonon modes for Si3N4 are much stronger in the polycrystalline sample studied here than in amorphous films reported previously.

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment

NASA Astrophysics Data System (ADS)

Katayama-Yoshida, H.; Nishimatsu, T.; Yamamoto, T.; Orita, N.

2001-10-01

We review our new valence control method of a co-doping for the fabrication of low-resistivity p-type GaN, p-type AlN and n-type diamond. The co-doping method is proposed based upon ab initio electronic structure calculation in order to solve the uni-polarity and the compensation problems in the wide band-gap semiconductors. In the co-doping method, we dope both the acceptors and donors at the same time by forming the meta-stable acceptor-donor-acceptor complexes for the p-type or donor-acceptor-donor complexes for the n-type under thermal non-equilibrium crystal growth conditions. We propose the following co-doping method to fabricate the low-resistivity wide band-gap semiconductors; p-type GaN: [Si + 2 Mg (or Be)], [H + 2 Mg (or Be)], [O + 2 Mg (or Be)], p-type AlN: [O + 2 C] and n-type diamond: [B + 2 N], [H + S], [H + 2 P]. We compare our prediction of the co-doping method with the recent successful experiments to fabricate the low-resistivity p-type GaN, p-type AlN and n-type diamond. We show that the co-doping method is the efficient and universal doping method by which to avoid carrier compensation with an increase of the solubility of the dopant, to increase the activation rate by decreasing the ionization energy of acceptors and donors, and to increase the mobility of the carrier.

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

NASA Astrophysics Data System (ADS)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

Optical and electrical properties of P3HT:graphene composite based devices

NASA Astrophysics Data System (ADS)

Yadav, Anjali; Verma, Ajay Singh; Gupta, Saral Kumar; Negi, Chandra Mohan Singh

2018-04-01

The polymer-carbon derivate composites are well known for their uses and performances in the photovoltaic and optoelectronic industries. In this paper, we synthesis P3HT:graphene composites and discuss their optical and electrical properties. The composites have been prepared by using spin-coating technique onto the glass substrates. It has been found that the incorporation of graphene reduces absorption intensity. However, absorption peak remain unchanged with addition of graphene. The surface morphology studies display homogeneous distribution of graphene with P3HT. Raman studies suggest that chemical structure was not affected by graphene doping. Devices having the structure of glass/ITO/P3HT/ Al and glass ITO/P3HT:graphene/Al were then fabricated. I-V behavior of the fabricated devices was found to be similar to the Schottky diode. ITO/P3HT:graphene/Al structure shows tremendous increase in current values as compared to the ITO/P3HT/Al. Furthermore, charge transport mechanism were studied by analyzing the double logarithmic J-V characteristics curve, which indicates that the current at low voltage follows Ohmic behavior, trap-charge limited conduction (TCLC) mechanism at an intermediate voltage and space charge limited conduction (SCLC) mechanism at sufficiently high voltages.

Native defect properties and p -type doping efficiency in group-IIA doped wurtzite AlN

NASA Astrophysics Data System (ADS)

Zhang, Yong; Liu, Wen; Niu, Hanben

2008-01-01

Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p -type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that nitrogen vacancies (VN) have low formation energies and introduce deep donor levels in wurtzite AlN, while in zinc blende AlN and GaN, these levels are reported to be shallow. The calculated acceptor levels γ(0/-) for substitutional Be (BeAl) , Mg (MgAl) , and Ca (CaAl) are 0.48, 0.58, and 0.95eV , respectively. In p -type AlN, Be interstitials (Bei) , which act as donors, have low formation energies, making them a likely compensating center in the case of acceptor doping. Whereas, when N-rich growth conditions are applied, Bei are energetically not favorable. It is found that p -type doping efficiency of substitutional Be, Mg, and Ca impurities in w-AlN is affected by atomic size and electronegativity of dopants. Among the three dopants, Be may be the best candidate for p -type w-AlN . N-rich growth conditions help us to increase the concentration of BeAl , MgAl , and CaAl .

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Crystal and molecular structure of the first dibino non-geminal macrocyclic dicyclophosphazene, & {;N 3P 3Cl 4[HN(CH 2) 3O(CH 2) 2O(CH 2) 3NH]&}; 2

NASA Astrophysics Data System (ADS)

Enjalbert, Renée; Galy, Jean; Sournies, François; Labarre, Jean-François

1990-04-01

Reaction of N 3P 3Cl 6 with the 4,7-dioxadecane-1,10-diamine (coded as 3O2O3) using an Et 2O/Na 2CO 3 water interface process leads to the DIBINO non-geminal 30-membered macrocyclic dicyclophosphazene &{;N 3P 3Cl 4[HN(CH 2) 3O(CH 2) 2O(CH 2) 3NH]&}; 2. This 30-crown-ether-like architecture crystallizes in the triclinic system, P1, a=9.019(6), b=9.224(5), c=11.542(8) Å, α=94.87(4), β=95.97(4), γ=99.68(3)°, V=936(1) Å 3, Dx=1.599 Mg m -3, R=0.049 for 2862 unique reflections and 199 variable parameters. The structure exhibits a spatial arrangement of two N 3P 3Cl 4 with two [HN(CH 2) 3O(CH 2) 3O(CH 2) 3NH] as bridges on different P atoms of N 3P 3 rings. Moreover, the two N 3P 3 rings are trans to the average plane of the 30-membered macrocycle ("chair" conformation).

Tune-out wavelength for the 1 s 2 s3 S - 1 s 3 p 3 P transition of helium: relativistic effects

NASA Astrophysics Data System (ADS)

Drake, Gordon W. F.; Manalo, Jacob

2017-04-01

The tune-out wavelength is the wavelength at which the frequency dependent polarizability of an atom vanishes. It can be measured to very high precision by means of an interferometric comparison between two beams. This paper is part of a joint theoretical/ experimental project with K. Baldwin et al. (Australian National University) and L.-Y. Tang et al. (Wuhan Institute of Physics and Mathematics) to perform a high precision comparison between theory and experiment as a probe of atomic structure, including relativistic and quantum electrodynamic effects. We will report the results of calculations for the tune-out wavelength that is closest to the 1 s 2 s3 S - 1 s 3 p3 P transition of 4He. Our result for the M = 0 magnetic substate, obtained with a fully correlated Hylleraas basis set, is 413 . 079 958 51 (12) nm. This includes a leading relativistic contribution of - 0 . 059 218 5 (16) nm from the Breit interaction as a perturbation, and a relativistic recoil contribution of - 0 . 000 044 47 (17) nm. The results will be compared with recent relativistic CI calculations. Research supported by tha Natural Sciences and Engineering Research Council of Canada.

One step synthesis of P-doped g-C3N4 with the enhanced visible light photocatalytic activity

NASA Astrophysics Data System (ADS)

Liu, Sen; Zhu, Honglei; Yao, Wenqing; Chen, Kai; Chen, Daimei

2018-02-01

In our work, P doped Graphitic nitride (g-C3N4) was prepared by the simple copolymerization of melamine and melamine phosphate. The melamine phosphate ester polymer is a complex of an s-triazine and phosphoric acid polymer, thus it will be favourable for P atom to incorporate into the Csbnd N network of g-C3N4. The doped P atoms may produce the delocalized lone electron and form the Lewis acid sites. The obtained P-doped g-C3N4 showed the higher photocatalytic activity in photodegradation of MB and 2,4-Dichlorophenol than g-C3N4. The optimum photocatatlytic activity of P-C3N4 with the weight ration of melamine phosphate and melamine at 0.06 is 2 times as higher as the pure g-C3N4 in MB photodegradation, and 1.5 times higher in 2,4-Dichlorophenol photodegradation. The enhancement of photodegradation efficiency is due to the delocalization effect of lone electron, promoting the separation of photogenerated charges, and the larger band gap of P doped g-C3N4.

Using the Lewis Acid Me3 Si-F-Al(ORF )3 To Prepare Phosphino-Phosphonium Cations with the Least-Coordinating Anion [(RF O)3 Al-F-Al(ORF )3 ].

PubMed

Possart, Josephine; Martens, Arthur; Schleep, Mario; Ripp, Alexander; Scherer, Harald; Kratzert, Daniel; Krossing, Ingo

2017-09-07

By reaction of two equivalents of Me 3 Si-F-Al(OR F ) 3 1 with an equimolar amount of PPh 2 Cl, the salt [Ph 2 P-PPh 2 Cl] + [(R F O) 3 Al-F-Al(OR F ) 3 ] - 2 is prepared smoothly in 91 % yield (NMR, XRD). The synthesis of [Ph 2 P-PPh 3 ] + [(R F O) 3 Al-F-Al(OR F ) 3 ] - 3 is best achieved by a two-step reaction: first, two equivalents of 1 react with one PPh 3 to give [Me 3 Si-PPh 3 ] + [(R F O) 3 Al-F-Al(OR F ) 3 ] - 4 (NMR, XRD), which, upon reaction with PPh 2 Cl, yields pure 3 and Me 3 SiCl (NMR, XRD). Typically, a stoichiometry of two equivalents of 1 with respect to one equivalent of the chloride donor should be used. Otherwise, the residual strong Lewis acidity of the [(R F O) 3 Al-F-Al(OR F ) 3 ] - anion in the presence of the [F-Al(OR F ) 3 ] - anion-that forms with less than two equivalents of 1-leads to further chloride exchange reactions that complicate work-up. This route presents the easiest way to introduce the least-coordinating [(R F O) 3 Al-F-Al(OR F ) 3 ] - anion into a system. We expect a wide use of this route in all areas, in which chloride-bond heterolysis in combination with very weakly coordinating anions is desirable. Additionally, we performed calculations on the bond dissociation mechanisms of [R 2 P-PMe 3 ] + and the isoelectronic Me 2 P-SiMe 3 and Me 2 Si-PMe 3 in dependence of the solvent permittivity. These calculations show, especially for the neutral reference compounds, a heavy influence of the solvent on the dissociation mechanism, which is why we suggest investigating these properties in solution instead of gas phase. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Conformational stability and force field of short-chain linear chlorophosphazenes: MNDO calculations, {sup 31}P NMR, vibrational spectra, and normal coordinate analyses of Cl{sub 3}PN(PCl{sub 2}N){sub n}P(O)Cl{sub 2} and [Cl{sub 3}PN(PCl{sub 2}N){sub n}PCl{sub 3}][PCl{sub 6}] (n = 1,2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bougeard, D.; Bremard, C.; De Jaeger, R.

1992-10-29

The Raman spectra of Cl{sub 3}PN(PCl{sub 2}N){pi}P(O)Cl{sub 2} and [Cl{sub 3}PN(PCl{sub 2}N){pi}PCl{sub 3}]{sup +}PCl{sub 6}{sup {minus}} (n = 1,2) were recorded in the solid and liquid states at different temperatures. The qualitative depolarization ratios were obtained in the liquid phase. A {sup 31}P NMR study for the molecular compounds showed a coalescence phenomenon near 220 K. The potential energy around the PN bonds for the Cl{sub 3}PN(PCl{sub 2}N)P(O)Cl{sub 2} molecule and [Cl{sub 3}PN(PCl{sub 2}N){sub 2}PCl{sub 3}]{sup +} cation are derived from MNDO (modified neglect of diatomic overlap) calculations. The stable conformations are found to be trans-cis for Cl{sub 3}PN(PCl{sub 2}N)P(O)Cl{submore » 2} and [Cl{sub 3}PN(PCl{sub 2}N){sub 2}PCl{sub 3}]{sup +}. The calculated structural parameters agree well with the X-ray experimental data. The frequencies obtained by normal coordinate analysis are in good agreement with the observed ones. The MNDO calculation of the harmonic force field is in reasonable agreement with the experimental values. The force constant values assigned to torsional modes around the PN bonds correspond to low barriers for the internal rotations. The easy internal rotation around the P-N and P{double_bond}N bonds can explain the flexibility of the phosphazene backbone and the elastomeric properties of the phosphazene polymers. 46 refs., 6 figs., 3 tabs.« less

N2 and P3 modulation during partial inhibition in a modified go/nogo task.

PubMed

Nguyen, An T; Moyle, Jonson J; Fox, Allison M

2016-09-01

The neural response following the partial inhibition of responses can provide insight into the processes underlying response inhibition. We examined the N2 and P3 on trials where participants correctly responded to go stimuli, successfully inhibited their response to nogo stimuli, and nogo trials where they initiated but did not complete their response (partial inhibitions) in an adult sample (N=24, M(age)=21.17, SD(age)=3.52). An enhanced and delayed N2 was observed on partially inhibited compared to successfully inhibited nogo trials. Further analysis showed that this modulation was error-related. An enhanced central P3 was observed following successful inhibitions compared to correct go trials, but not following partial inhibitions. The results suggest that the central P3 enhancement is specific to the complete and successful inhibition of responses. Therefore, the absence of a central P3 on partial inhibitions could reflect insufficient inhibition or a monitored failure in inhibiting the response. Although, our findings provide support for the role of P3 in response inhibition, it raises questions about the processes involved in the subsequent inhibition or correction of the erroneous response. Further research examining the neural response following both partial and unsuccessful inhibitions could provide insight regarding these processes. Copyright © 2016 Elsevier B.V. All rights reserved.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

NASA Technical Reports Server (NTRS)

Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

1996-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes

NASA Astrophysics Data System (ADS)

Hestroffer, Karine; Sperlich, Dennis; Dadgostar, Shabnam; Golz, Christian; Krumland, Jannis; Masselink, William Ted; Hatami, Fariba

2018-05-01

The transport properties of n- and p-doped AlP layers grown by gas-source molecular beam epitaxy are investigated. n- and p-types of conductivities are achieved using Si and Be with peak room-temperature mobilities of 59.6 cm2/Vs and 65.0 cm2/Vs for electrons and holes, respectively. Si-doping results are then used for the design of n-doped AlP/GaP distributed Bragg reflectors (DBRs) with an ohmic resistance of about 7.5 ± 0.1 Ω. The DBRs are integrated as bottom mirrors in GaP-based light-emitting diodes (LEDs) containing InGaP/GaP quantum dots. The functionality of the LED structure and the influence of the DBRs on the InGaP/GaP electroluminescence spectra are demonstrated.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Chemical strain-dependent two-dimensional transport at R AlO 3 / SrTiO 3 interfaces ( R = La , Nd , Sm , and Gd )

DOE PAGES

Li, Chen; Shen, Xuan; Yang, Yurong; ...

2016-12-27

Perovskite RAlO 3 (R = La, Nd, Sm, and Gd) films have been deposited epitaxially on (001) TiO 2-terminated SrTiO 3 substrates. In this paper, it is observed that the two-dimensional transport characteristics at the RAlO 3/SrTiO 3 interfaces are very sensitive to the species of rare-earth element, that is to chemical strain. Although electron energy loss spectroscopy measurements show that electron transfer occurs in all the four polar/nonpolar heterostructures, the amount of electrons transferred across SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 interfaces are much less than those across LaAlO 3/SrTiO 3 and NdAlO 3/SrTiO 3 interfaces. First-principles calculationsmore » reveal the competition between ionic polarization and electronic polarization in the polar layers in compensating the build-in polarization due to the polar discontinuity at the interface. Finally, in particular, a large ionic polarization is found in SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 systems (which experience the largest tensile epitaxial strain), hence reducing the amount of electrons transferred.« less

Phase equilibrium relations in the binary systems LiPO 3CeP 3O 9 and NaPO 3CeP 3O 9

NASA Astrophysics Data System (ADS)

Rzaigui, Mohamed; Ariguib, Najia Kbir

1981-10-01

The LiPO 3CeP 3O 9 and NaPO 3CeP 3O 9 systems have been investigated for the first time by DTA, X-ray diffraction, and infrared spectroscopy. Each system forms a single 1:1 compound. LiCe(PO 3) 4 melts in a peritectic reaction at 980°C. NaCe(PO 3) 4 melts incongruently, too, at 865°C. These compounds have a monoclinic unit cell with the parameters: a = 16.415(6), b = 7,042(6), c = 9.772(7)Å; β = 126.03(5)°; Z = 4; space group {C 2}/{c} for LiCe (PO 3) 4; and a = 9.981(4), b = 13.129(6), c = 7.226(5) Å, β = 89.93(4)°, Z = 4, space group {P2 1}/{n} for NaCe(PO 3) 4. It is established that both compounds are mixed polyphosphates with chain structure of the type | MIIMIIIII (PO 3) 4| ∞MII: alkali metal, MIIIII: rare earth.

PHENIX measurements of open and hidden heavy flavor in p+p, p+Al, and p/d/3He+Au collisions across a wide range of rapidity

NASA Astrophysics Data System (ADS)

Lim, Sanghoon; Phenix Collaboration

2017-11-01

Despite intense theoretical and experimental investigation, the physical mechanisms governing the suppression of bound quark-antiquark states in nuclear collisions are not yet fully understood. While color screening in a plasma phase is expected to play a role, there are numerous other possible suppression mechanisms that do not require deconfinement, as well as effects on the heavy quark initial state in the nucleus which can also play a role. To study these effects, the PHENIX collaboration has used the flexibility of the RHIC accelerator complex to observe the evolution of open heavy flavor and quarkonia dynamics as both the projectile and target nuclei size are varied. Open heavy flavor in small collision systems can serve as the baseline for interpreting quarkonia production in the nuclear environment, and comparisons of the ψ (2 S) with the ψ (1 S) show that in rapidity regions with relatively high hadron density, the larger 2S state is preferentially more suppressed than the more tightly bound ψ (1 S). This suggests that late-stage mechanisms may be at least partially responsible for quarkonia suppression in nuclear collisions. In this talk, we will present results on excited-state quarkonia in p+p, p+Al, and p/d/3He+Au collisions and open heavy flavor in small systems, and discuss how these measurements impact our understanding of heavy quark behavior in the quark-gluon plasma.

Quenching of I(2P1/2) by O3 and O(3P).

PubMed

Azyazov, Valeriy N; Antonov, Ivan O; Heaven, Michael C

2007-04-26

Oxygen-iodine lasers that utilize electrical or microwave discharges to produce singlet oxygen are currently being developed. The discharge generators differ from conventional chemical singlet oxygen generators in that they produce significant amounts of atomic oxygen. Post-discharge chemistry includes channels that lead to the formation of ozone. Consequently, removal of I(2P1/2) by O atoms and O3 may impact the efficiency of discharge driven iodine lasers. In the present study, we have measured the rate constants for quenching of I(2P1/2) by O(3P) atoms and O3 using pulsed laser photolysis techniques. The rate constant for quenching by O3, (1.8 +/- 0.4) x 10(-12) cm3 s-1, was found to be a factor of 5 smaller than the literature value. The rate constant for quenching by O(3P) was (1.2 +/- 0.2) x 10(-11) cm3 s-1.

The N-terminus and Phe52 residue of LC3 recruit p62/SQSTM1 into autophagosomes.

PubMed

Shvets, Elena; Fass, Ephraim; Scherz-Shouval, Ruthie; Elazar, Zvulun

2008-08-15

LC3 belongs to a novel ubiquitin-like protein family that is involved in different intracellular trafficking processes, including autophagy. All members of this family share a unique three-dimensional structure composed of a C-terminal ubiquitin core and two N-terminal alpha-helices. Here, we focus on the specific contribution of these regions to autophagy induced by amino acid deprivation. We show that the ubiquitin core by itself is sufficient for LC3 processing through the conjugation machinery and for its consequent targeting to the autophagosomal membrane. The N-terminal region was found to be important for interaction between LC3 and p62/SQSTM1 (hereafter termed p62). This interaction is dependent on the first 10 amino acids of LC3 and on specific residues located within the ubiquitin core. Knockdown of LC3 isoforms and overexpression of LC3 mutants that fail to interact with p62 blocked the incorporation of p62 into autophagosomes. The accumulation of p62 was accompanied by elevated levels of polyubiquitylated detergent-insoluble structures. p62, however, is not required for LC3 lipidation, autophagosome formation and targeting to lysosomes. Our results support the proposal that LC3 is responsible for recruiting p62 into autophagosomes, a process mediated by phenylalanine 52, located within the ubiquitin core, and the N-terminal region of the protein.

Effects of stop-signal probability in the stop-signal paradigm: the N2/P3 complex further validated.

PubMed

Ramautar, J R; Kok, A; Ridderinkhof, K R

2004-11-01

The aim of this study was to examine the effects of frequency of occurrence of stop signals in the stop-signal paradigm. Presenting stop signals less frequently resulted in faster reaction times to the go stimulus and a lower probability of inhibition. Also, go stimuli elicited larger and somewhat earlier P3 responses when stop signals occurred less frequently. Since the amplitude effect was more pronounced on trials when go signals were followed by fast than slow reactions, it probably reflected a stronger set to produce fast responses. N2 and P3 components to stop signals were observed to be larger and of longer latency when stop signals occurred less frequently. The amplitude enhancement of these N2 and P3 components were more pronounced for unsuccessful than for successful stop-signal trials. Moreover, the successfully inhibited stop trials elicited a frontocentral P3 whereas unsuccessfully inhibited stop trials elicited a more posterior P3 that resembled the classical P3b. P3 amplitude in the unsuccessfully inhibited condition also differed between waveforms synchronized with the stop signal and waveforms synchronized with response onset whereas N2 amplitude did not. Taken together these findings suggest that N2 reflected a greater significance of failed inhibitions after low probability stop signals while P3 reflected continued processing of the erroneous response after response execution.

The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

Molecular evidence for interspecies transmission of H3N2pM/H3N2v influenza A viruses at an Ohio agricultural fair, July 2012

PubMed Central

Bowman, Andrew S; Sreevatsan, Srinand; Killian, Mary L; Page, Shannon L; Nelson, Sarah W; Nolting, Jacqueline M; Cardona, Carol; Slemons, Richard D

2012-01-01

Evidence accumulating in 2011–2012 indicates that there is significant intra- and inter-species transmission of influenza A viruses at agricultural fairs, which has renewed interest in this unique human/swine interface. Six human cases of influenza A (H3N2) variant (H3N2v) virus infections were epidemiologically linked to swine exposure at fairs in the United States in 2011. In 2012, the number of H3N2v cases in the Midwest had exceeded 300 from early July to September, 2012. Prospective influenza A virus surveillance among pigs at Ohio fairs resulted in the detection of H3N2pM (H3N2 influenza A viruses containing the matrix (M) gene from the influenza A (H1N1) pdm09 virus). These H3N2pM viruses were temporally and spatially linked to several human H3N2v cases. Complete genomic analyses of these H3N2pM isolates demonstrated >99% nucleotide similarity to the H3N2v isolates recovered from human cases. Actions to mitigate the bidirectional interspecies transmission of influenza A virus between people and animals at agricultural fairs may be warranted. PMID:26038404

Mass spectroscopic phosphoprotein mapping of Ral Binding protein 1 (RalBP1/Rip1/RLIP76)

PubMed Central

Herlevsen, Mikael C; Theodorescu, Dan

2009-01-01

RalBP1, a multifunctional protein implicated in cancer cell proliferation, radiation and chemoresistance and ligand dependent receptor internalization, is upregulated in bladder cancer and is a downstream effector of RalB, a GTPase associated with metastasis. RalBP1 can be regulated by phosphorylation by protein kinase C (PKC). No studies have comprehensively mapped RalBP1 phosphorylation sites or whether RalB affects these. We identified fourteen phosphorylation sites of RalBP1 in human bladder carcinoma UMUC-3 and embryonic kidney derived 293T cells. The phosphorylated residues are concentrated at the N-terminus. Ten of the first 100 amino acids of the primary structure were phosphorylated. Nine were serine residues, and one a threonine. We evaluated the effect of RalB overexpression on RalBP1 phosphorylation and found the largest change in phosphorylation status at S463 and S645. Further characterization of these sites will provide novel insights on RalBP1 biology, its functional relationship to RalB and possible avenues for therapeutic intervention. PMID:17706599

Quenching of I(2P 1/2) by O 3 and O( 3P)

NASA Astrophysics Data System (ADS)

Azyazov, V. N.; Antonov, I. O.; Ruffner, S.; Heaven, M. C.

2006-02-01

Oxygen-iodine lasers that utilize electrical or microwave discharges to produce singlet oxygen are currently being developed. The discharge generators differ from conventional chemical singlet oxygen generators in that they produce significant amounts of atomic oxygen. Post-discharge chemistry includes channels that lead to the formation of ozone. Consequently, removal of I(2P 1/2) by O atoms and O 3 may impact the efficiency of discharge driven iodine lasers. In the present study we have measured the rate constants for quenching of I(2P 1/2) by O( 3P) atoms and O 3 using pulsed laser photolysis techniques. The rate constant for quenching by O 3, 1.8x10 -12 cm 3 s -1, was found to be a factor of five smaller than the literature value. The rate constant for quenching by O( 3P) was 1.2x10 -11 cm 3 s -1. This was six times larger than a previously reported upper bound, but consistent with estimates obtained by modeling the kinetics of discharge-driven laser systems.

Enterotoxigenic Escherichia coli Adhesin-Toxoid Multiepitope Fusion Antigen CFA/I/II/IV-3xSTaN12S-mnLTG192G/L211A-Derived Antibodies Inhibit Adherence of Seven Adhesins, Neutralize Enterotoxicity of LT and STa Toxins, and Protect Piglets against Diarrhea.

PubMed

Nandre, Rahul; Ruan, Xiaosai; Lu, Ti; Duan, Qiangde; Sack, David; Zhang, Weiping

2018-03-01

Enterotoxigenic Escherichia coli (ETEC) strains are a leading cause of children's diarrhea and travelers' diarrhea. Vaccines inducing antibodies to broadly inhibit bacterial adherence and to neutralize toxin enterotoxicity are expected to be effective against ETEC-associated diarrhea. 6×His-tagged adhesin-toxoid fusion proteins were shown to induce neutralizing antibodies to several adhesins and LT and STa toxins (X. Ruan, D. A. Sack, W. Zhang, PLoS One 10:e0121623, 2015, https://doi.org/10.1371/journal.pone.0121623). However, antibodies derived from His-tagged CFA/I/II/IV-2xSTa A14Q -dmLT or CFA/I/II/IV-2xSTa N12S -dmLT protein were less effective in neutralizing STa enterotoxicity and were not evaluated in vivo for efficacy against ETEC diarrhea. Additionally, His-tagged proteins are considered less desirable for human vaccines. In this study, we produced a tagless adhesin-toxoid MEFA (multiepitope fusion antigen) protein, enhanced anti-STa immunogenicity by including a third copy of STa toxoid STa N12S , and examined antigen immunogenicity in a murine model. Moreover, we immunized pregnant pigs with the tagless adhesin-toxoid MEFA protein and evaluated passive antibody protection against STa + or LT + ETEC infection in a pig challenge model. Results showed that tagless adhesin-toxoid MEFA CFA/I/II/IV-3xSTa N12S -mnLT R192G/L211A induced broad antiadhesin and antitoxin antibody responses in the intraperitoneally immunized mice and the intramuscularly immunized pigs. Mouse and pig serum antibodies significantly inhibited adherence of seven colonization factor antigen (CFA) adhesins (CFA/I and CS1 to CS6) and effectively neutralized both toxins. More importantly, suckling piglets born to the immunized mothers acquired antibodies and were protected against STa + ETEC and LT + ETEC diarrhea. These results indicated that tagless CFA/I/II/IV-3xSTa N12S -mnLT R192G/L211A induced broadly protective antiadhesin and antitoxin antibodies and demonstrate that this adhesin

Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

NASA Astrophysics Data System (ADS)

Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

2018-01-01

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Dietary Omega-3 Polyunsaturated Fatty Acids Prevent Vascular Dysfunction and Attenuate Cytochrome P4501A1 Expression by 2,3,7,8-Tetrachlorodibenzo-P-Dioxin.

PubMed

Wiest, Elani F; Walsh-Wilcox, Mary T; Rothe, Michael; Schunck, Wolf-Hagen; Walker, Mary K

2016-11-01

Omega-3 polyunsaturated fatty acids (n-3 PUFAs) found in fish protect against cardiovascular morbidity and mortality; however, many individuals avoid fish consumption due to concerns about pollutants. We tested the hypothesis that n-3 PUFAs would prevent vascular dysfunction induced by 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD). C57Bl/6 male mice were fed a chow or n-3 PUFA diet for 10 weeks and were exposed to vehicle or 300 ng/kg/d TCDD during the final 2 weeks on each diet. Aortic vasoconstriction mediated by arachidonic acid (AA) ± SKF525 (P450 inhibitor) or SQ29548 (thromboxane/prostanoid [TP] receptor antagonist) was assessed. RBC fatty acids and expression of n-3 and n-6 PUFA metabolites were analyzed. Cytochrome P4501A1 (CYP1A1), CYP1B1, and aryl hydrocarbon receptor (AHR) expression was measured. TCDD significantly increased AA-mediated vasoconstriction on a chow diet by increasing the contribution of P450s and TP receptor to the constriction response. In contrast, the n-3 PUFA diet prevented the TCDD-induced increase in AA vasoconstriction and normalized the contribution of P450s and TP receptor. Although TCDD increased the levels of AA vasoconstrictors on the chow diet, this increase was prevent by the n-3 PUFA diet. Additionally, the n-3 PUFA diet significantly increased the levels of n-3 PUFA-derived vasodilators and TCDD increased these levels further. Interestingly, the n-3 PUFA diet significantly attenuated CYP1A1 induction by TCDD without a significant effect on AHR expression. These data suggest that n-3 PUFAs can prevent TCDD-induced vascular dysfunction by decreasing vasoconstrictors, increasing vasodilators, and attenuating CYP1A1 induction, which has been shown previously to contribute to TCDD-induced vascular dysfunction. © The Author 2016. Published by Oxford University Press on behalf of the Society of Toxicology. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

Response inhibition in psychopathy: the frontal N2 and P3.

PubMed

Munro, Gillian E S; Dywan, Jane; Harris, Grant T; McKee, Shari; Unsal, Ayse; Segalowitz, Sidney J

2007-05-17

Psychopathy has been associated with atypical function of the anterior cingulate cortex (ACC) and adjacent brain regions and with abnormalities in performance monitoring, which is thought to rely on these structures. The ACC and adjacent regions are also involved in the generation of two characteristic components of the event-related potential: the frontal N2 and P3. Both components are enhanced when a response is withheld (NoGo trial) within a series of positive-responses (Go trials) and are considered an index of response inhibition. We recorded event-related potentials while violent offenders who varied on the dimension of psychopathy and non-offender controls performed a Go/NoGo task. The offenders made more errors of commission on NoGo trials but this effect was unrelated to level of psychopathy within the group and, inconsistent with a previous report, they produced the enhanced frontal N2 and P3 effect in response to NoGo relative to Go conditions. We conclude that the neural processes involved in response inhibition are not abnormal in psychopaths when both stimuli and context are affectively neutral and suggest that a more nuanced perspective regarding impulsivity in this population be considered.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

1993-01-01

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

The selection performance of an antibody library displayed on filamentous phage coat proteins p9, p3 and truncated p3.

PubMed

Huovinen, Tuomas; Syrjänpää, Markku; Sanmark, Hanna; Seppä, Titta; Akter, Sultana; Khan, Liton Md Ferdhos; Lamminmäki, Urpo

2014-09-19

Filamentous phage display has become an ordinary tool to engineer antibody fragments. Several capsid proteins have been applied for displaying antibodies, of which gene III (p3) protein is used the most followed by experiments with gene IX (p9) protein. Despite the popularity, there are no library scale studies to objectively compare differences in the selection performance of the libraries, when displayed via different capsid proteins. In this study, an identical antibody repertoire was displayed as Fab fragments on p9, p3 and truncated p3 (p3Δ). In addition, the library clones were displayed as ScFv fragments on p3Δ and the Fab-p3 display valency was modulated by hyperphage and VCS-M13 superinfections. The selection performances of the libraries were followed in repeated parallel panning reactions against streptavidin (STR) and digoxigenin (DIG). Selection was successful with all display formats, but the enrichment of specific clones from Fab-p9 library was clearly less efficient than from the other libraries. The most diverse outputs were obtained from p3Δ display and the highest affinity anti-DIG antibodies from the ScFv repertoire. Unfortunately, the number of retrieved specific clones was too low for explicit analysis of the differences in the number of obtained unique clones from each library. However, severe reduction in sequence diversity was observed in p3-Fab libraries prior to panning, which in turn, materialized as a low number of unique specific clones. Oligovalent display by hyperphage resulted in a higher number of unique clones, but the same highest affinity anti-DIG Fab was recovered also by VCS-M13 superinfection. The compromised enrichment of the target-specific clones from the Fab repertoire as a fusion to p9 capsid protein in our experiments, the significant loss of functional diversity in Fab-p3 library after single phage packing cycle and the retrieval of higher affinity anti-digoxigenin clones as ScFv molecules than as Fab molecules from

The synthesis and structure of a chiral 1D aluminophosphate chain compound: d-Co(en) 3[AlP 2O 8]·6.5H 2O

NASA Astrophysics Data System (ADS)

Chen, Peng; Li, Jiyang; Yu, Jihong; Wang, Yu; Pan, Qinhe; Xu, Ruren

2005-06-01

A new chiral one-dimensional (1D) aluminophosphate chain compound [ d-Co(en) 3][AlP 2O 8]·6.5H 2O (designated AlPO-CJ22) has been hydrothermally synthesized by using the optically pure d-Co(en) 3I 3 complex as the template. Single-crystal structural analysis reveals that its structure is built up from alternating connection of AlO 4 and PO 2(=O 2) tetrahedra to form corner-shared Al 2P 2 four-membered ring (4-MR) chains. The d-Co(en) 33+ complex cations extended along the 2 1 screw axis interact with the inorganic chains through hydrogen-bonds of N⋯O atoms in a helical fashion. Optical rotation measurement shows that AlPO-CJ22 is chiral as with d-Co(en) 33+ complex cations. Crystal data: orthorhombic, I2 12 12 1, a=8.5573(8) Å, b=22.613(2) Å, c=22.605(2) Å, Z=8, R1=0.067, wR2=0.1291, and Flack parameter: -0.02(3). CCDC number: 254179.

Phase Constituents and Microstructure of Ti3Al/Fe3Al + TiN/TiB2 Composite Coating on Titanium Alloy

NASA Astrophysics Data System (ADS)

Li, Jianing; Chen, Chuanzhong; Zhang, Cuifang

Laser cladding of the Fe3Al + B4C/TiN + Al2O3 pre-placed powders on the Ti-6Al-4V alloy can form the Ti3Al/Fe3Al + TiN/TiB2 composite coating, which improved the wear resistance of the Ti-6Al-4V alloy surface. In this study, the Ti3Al/Fe3Al + TiN/TiB2 composite coating has been researched by means of X-ray diffraction and scanning electron microscope. It was found that during the laser cladding process, Al2O3 can react with TiB2, leading to the formations of Ti3Al and B. This principle can be used to improve the Fe3Al + B4C/TiN laser-cladded coating on the Ti-6Al-4V alloy. Furthermore, during the cladding process, C consumed the oxygen in Fe3Al + B4C /TiN + Al2O3 molten pool, which retarded the productions of the redundant metal oxides.

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

NASA Astrophysics Data System (ADS)

Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

2015-07-01

Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Yen, Chih-Ta; Chou, Cheng-Yi; Chang, S. J.; Wu, Meng-Chyi

2012-06-01

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

NASA Astrophysics Data System (ADS)

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2015-01-01

We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm-3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

NASA Technical Reports Server (NTRS)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Measurement of the relative yields of ψ ( 2 S ) to ψ ( 1 S ) mesons produced at forward and backward rapidity in p + p , p + Al , p + Au , and He 3 + Au collisions at s NN = 200 GeV

DOE PAGES

Adare, A.; Aidala, C.; Ajitanand, N. N.; ...

2017-03-09

The PHENIX Collaboration has measured the ratio of the yields of ψ(2S) to ψ(1S) mesons produced in p+p, p+Al, p+Au, and 3He+Au collisions at √ sNN = 200 GeV over the forward and backward rapidity intervals 1.2 < |y| < 2.2. We find that the ratio in p+p collisions is consistent with measurements at other collision energies. In collisions with nuclei, we find that in the forward (p-going or 3He-going) direction, the relative yield of ψ(2S) mesons to ψ(1S) mesons is consistent with the value measured in p+p collisions. However, in the backward (nucleus-going) direction, the ψ(2S) meson is preferentiallymore » suppressed by a factor of ~2. This suppression is attributed in some models to the breakup of the weakly bound ψ(2S) meson through final-state interactions with comoving particles, which have a higher density in the nucleus-going direction. As a result, these breakup effects may compete with color screening in a deconfined quark-gluon plasma to produce sequential suppression of excited quarkonia states.« less

Measurement of the relative yields of ψ ( 2 S ) to ψ ( 1 S ) mesons produced at forward and backward rapidity in p + p , p + Al , p + Au , and He 3 + Au collisions at s NN = 200 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adare, A.; Aidala, C.; Ajitanand, N. N.

The PHENIX Collaboration has measured the ratio of the yields of ψ(2S) to ψ(1S) mesons produced in p+p, p+Al, p+Au, and 3He+Au collisions at √ sNN = 200 GeV over the forward and backward rapidity intervals 1.2 < |y| < 2.2. We find that the ratio in p+p collisions is consistent with measurements at other collision energies. In collisions with nuclei, we find that in the forward (p-going or 3He-going) direction, the relative yield of ψ(2S) mesons to ψ(1S) mesons is consistent with the value measured in p+p collisions. However, in the backward (nucleus-going) direction, the ψ(2S) meson is preferentiallymore » suppressed by a factor of ~2. This suppression is attributed in some models to the breakup of the weakly bound ψ(2S) meson through final-state interactions with comoving particles, which have a higher density in the nucleus-going direction. As a result, these breakup effects may compete with color screening in a deconfined quark-gluon plasma to produce sequential suppression of excited quarkonia states.« less

RIPK3 regulates p62-LC3 complex formation via the caspase-8-dependent cleavage of p62.

PubMed

Matsuzawa, Yu; Oshima, Shigeru; Nibe, Yoichi; Kobayashi, Masanori; Maeyashiki, Chiaki; Nemoto, Yasuhiro; Nagaishi, Takashi; Okamoto, Ryuichi; Tsuchiya, Kiichiro; Nakamura, Tetsuya; Watanabe, Mamoru

2015-01-02

RIPK3 is a key molecule for necroptosis, initially characterized by necrotic cell death morphology and the activation of autophagy. Cell death and autophagic signaling are believed to tightly regulate each other. However, the associated recruitment of signaling proteins remains poorly understood. p62/sequestosome-1 is a selective autophagy substrate and a selective receptor for ubiquitinated proteins. In this study, we illustrated that both mouse and human RIPK3 mediate p62 cleavage and that RIPK3 interacts with p62, resulting in complex formation. In addition, RIPK3-dependent p62 cleavage is restricted by the inhibition of caspases, especially caspase-8. Moreover, overexpression of A20, a ubiquitin-editing enzyme and an inhibitor of caspase-8 activity, inhibits RIPK3-dependent p62 cleavage. To further investigate the potential role of RIPK3 in selective autophagy, we analyzed p62-LC3 complex formation, revealing that RIPK3 prevents the localization of LC3 and ubiquitinated proteins to the p62 complex. In addition, RIPK3-dependent p62-LC3 complex disruption is regulated by caspase inhibition. Taken together, these results demonstrated that RIPK3 interacts with p62 and regulates p62-LC3 complex formation. These findings suggested that RIPK3 serves as a negative regulator of selective autophagy and provides new insights into the mechanism by which RIPK3 regulates autophagic signaling. Copyright © 2014 Elsevier Inc. All rights reserved.

Differential modulation of the N2 and P3 event-related potentials by response conflict and inhibition.

PubMed

Groom, Madeleine J; Cragg, Lucy

2015-07-01

Developing reliable and specific neural markers of cognitive processes is essential to improve understanding of healthy and atypical brain function. Despite extensive research there remains uncertainty as to whether two electrophysiological markers of cognitive control, the N2 and P3, are better conceptualised as markers of response inhibition or response conflict. The present study aimed to directly compare the effects of response inhibition and response conflict on the N2 and P3 event-related potentials, within-subjects. A novel hybrid go/no-go flanker task was performed by 19 healthy adults aged 18-25 years while EEG data were collected. The response congruence of a central target stimulus and 4 flanking stimuli was manipulated between trials to vary the degree of response conflict. Response inhibition was required on a proportion of trials. N2 amplitude was measured at two frontal electrode sites; P3 amplitude was measured at 4 midline electrode sites. N2 amplitude was greater on incongruent than congruent trials but was not enhanced by response inhibition when the stimulus array was congruent. P3 amplitude was greater on trials requiring response inhibition; this effect was more pronounced at frontal electrodes. P3 amplitude was also enhanced on incongruent compared with congruent trials. The findings support a role for N2 amplitude as a marker of response conflict and for the frontal shift of the P3 as a marker of response inhibition. This paradigm could be applied to clinical groups to help clarify the precise nature of impaired action control in disorders such as attention deficit/hyperactivity disorders (ADHD). Copyright © 2015 Elsevier Inc. All rights reserved.

Synthesizing (ZrAl3 + AlN)/Mg-Al composites by a 'matrix exchange' method

NASA Astrophysics Data System (ADS)

Gao, Tong; Li, Zengqiang; Hu, Kaiqi; Han, Mengxia; Liu, Xiangfa

2018-06-01

A method named 'matrix exchange' to synthesize ZrAl3 and AlN reinforced Mg-Al composite was developed in this paper. By inserting Al-10ZrN master alloy into Mg matrix and reheating the cooled ingot to 550 °C, Al and Mg atoms diffuse to the opposite side. As a result, liquid melt occurs once the interface areas reach to proper compositions. Then dissolved Al atoms react with ZrN, leading to the in-situ formation of ZrAl3 and AlN particles, while the Al matrix is finally replaced by Mg. This study provides a new insight for preparing Mg composites.

Decomposition of P(CH 3) 3 on Ru(0001): comparison with PH 3 and PCl 3

NASA Astrophysics Data System (ADS)

Tao, H.-S.; Diebold, U.; Shinn, N. D.; Madey, T. E.

1997-04-01

The decomposition of P(CH 3) 3 adsorbed on Ru(0001) at 80 K is studied by soft X-ray photoelectron spectroscopy using synchrotron radiation. Using the chemical shifts in the P 2p core levels, we are able to identify various phosphorus-containing surface reaction products and follow their reactions on Ru(0001). It is found that P(CH 3) 3 undergoes a step-wise demethylation on Ru(0001), P(CH 3) 3 → P(CH 3) 2 → P(CH 3) → P, which is complete around ˜450 K. These results are compared with the decomposition of isostructural PH 3 and PCl 3 on Ru(0001). The decomposition of PH 3 involves a stable intermediate, labeled as PH x, and follows a reaction of: PH 3 → PH x → P, which is complete around ˜190 K. The conversion of chemisorbed phosphorus to ruthenium phosphide is observed and is complete around ˜700 K on Ru(0001). PCl 3 also follows a step-wise decomposition reaction, PCl 3 → PCl 2 → PCl → P, which is complete around ˜300 K. The energetics of the adsorption and the step-wise decomposition reactions of PH 3, PCl 3 and P(CH 3) 3 are estimated using the bond order conservation Morse potential (BOCMP) method. The energetics calculated using the BOCMP method agree qualitatively with the experimental data.

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

T(T,4He)2n and 3He(3He,4He)2p Reactions and the Energy Dependence of Their Mechanisms

NASA Astrophysics Data System (ADS)

Bacher, Andrew; McNabb, Dennis; Brune, Carl; Sayre, Dan; Hale, Gerry; Frenje, Johan; Gatu Johnson, Maria

2015-10-01

We have studied the T(T,alpha)2n reaction because it is the charge symmetric analog to the 3He(3He,alpha)2p reaction which completes the most direct mode of the p-p chain in stellar interiors. These reactions lead to three-body final states whose energy spectrum shapes are dominated by the strong nucleon-alpha interaction and the weaker nucleon-nucleon interaction. These experiments were done at OMEGA at the University of Rochester and at the NIF at Lawrence Livermore Lab. We will focus on two features: (1) the excitation energy dependence of the reaction mechanism and (2) the center-of-mass energy dependence of the reaction mechanism. At stellar energies (OMEGA and the NIF) we find that the shape of the neutron spectrum peaks in the middle. The n-alpha 1/2-excited state is about two times stronger than the n-alpha 3/2-ground state. For the 3He+3He reaction (at CalTech), the proton spectrum peaks at the high end. The p-alpha 3/2-state is about two times stronger than the 1/2-state. This difference in the spectrum shape is explained by theoretical models which include the interference between the two identical fermions in the final state. At CalTech we have angular distributions of the 3He+3He reaction from 2 MeV to 18 MeV. We see the p-wave strength increasing.

Suppression of Allowed Transitions in Al-like Krypton (Kr23+) Due to the Presence of a Magnetic Dipole Transition in the 3s23p 2P Ground Term

NASA Astrophysics Data System (ADS)

Reader, Joseph; Podpaly, Yuri; Ralchenko, Yuri; Gillaspy, John

2013-05-01

Extreme ultraviolet spectra of highly charged krypton atoms were produced with an electron beam ion trap (EBIT) and recorded with a flat-field grazing-incidence spectrometer. The wavelength range was 3-18 nm. Wavelength calibration was provided by known lines of highly ionized Kr as well as spectra of C, O, Xe, and Ba. The observed spectra were interpreted with the aid of collisional-radiative modeling of the EBIT plasma. For the Al-like ion Kr23+ the allowed resonance lines 3s23p 2P-3s23d 2D exhibited extreme deviation from the normal ratios for lines of this multiplet. In particular, the 2P3/2-2D5/2 transition, normally the strongest, was observed to be the weakest. This effect was explained by the fact that in the low electron density environment of EBIT the 2D5/2 level is primarily populated by electron excitation from 2P3/2. However, the presence of a magnetic dipole M1 transition 3s23p 2P1/2-2P3/2 reduces the population of 2P3/2 and hence the population of 2D5/2. We are conducting further modeling with varying electron density to try to reproduce the observed line ratios. This could serve as a diagnostic tool for determining electron density in EBIT and fusion energy devices. Supported by Office of Fusion Energy Sciences of Dept. of Energy.

New series of triple molybdates AgA{sub 3}R(MoO{sub 4}){sub 5} (A=Mg, R=Cr, Fe; A=Mn, R=Al, Cr, Fe, Sc, In) with framework structures and mobile silver ion sublattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotova, Irina Yu.; Buryat State University, Smolin St. 24a, Ulan-Ude 670000, Buryat Republic; Solodovnikov, Sergey F.

Triple molybdates AgA{sub 3}R(MoO{sub 4}){sub 5} (A=Mg, R=Cr, Fe; A=Mn, R=Al, Cr, Fe, Sc, In) of the NaMg{sub 3}In(MoO{sub 4}){sub 5} type were synthesized and single crystals of AgMg{sub 3}R(MoO{sub 4}){sub 5} (R=Cr, Fe) were grown. In their structures, the MoO{sub 4} tetrahedra, pairs and trimers of edge-shared (Mg, R)O{sub 6} octahedra are connected by common vertices to form a 3D framework. Large framework cavities involve Ag{sup +} cations disordered on three nearby positions with CN=3+1 or 4+1. Alternating (Mg, R)O{sub 6} octahedra and MoO{sub 4} tetrahedra in the framework form quadrangular windows penetrable for Ag{sup +} at elevated temperatures.more » Above 653–673 K, the newly obtained molybdates demonstrate abrupt reduction of the activation energy to 0.4–0.6 eV. At 773 K, AgMg{sub 3}Al(MoO{sub 4}){sub 5} shows electric conductivity 2.5·10{sup −2} S/cm and E{sub a}=0.39 eV compatible with characteristics of the best ionic conductors of the NASICON type. - Graphical abstract: Triple molybdates AgA{sub 3}R(MoO{sub 4}){sub 5} (A=Mg, R=Cr, Fe; A=Mn, R=Al, Cr, Fe, Sc, In) of the NaMg{sub 3}In(MoO{sub 4}){sub 5} type were synthesized, AgMg{sub 3}R(MoO{sub 4}){sub 5} (R=Cr, Fe) were structurally characterized, ion-conductive properties of AgMg{sub 3}Al(MoO{sub 4}){sub 5} were measured. Display Omitted - Highlights: • Triple molybdates AgA{sub 3}R(MoO{sub 4}){sub 5} (A=Mg, R=Cr, Fe; A=Mn, R=Al, Cr, Fe, Sc, In) of the NaMg{sub 3}In(MoO{sub 4}){sub 5} type were synthesized. • Single crystals of AgMg{sub 3}R(MoO{sub 4}){sub 5} (R=Cr, Fe) were grown and their crystal structures were determined. • Disordering Ag{sup +} ions and penetrable framework structures of AgMg{sub 3}R(MoO{sub 4}){sub 5} (R=Cr, Fe) suggest 2D-character of silver-ion mobility. • Measured ion-conductive properties of AgMg{sub 3}Al(MoO{sub 4}){sub 5} are compatible with characteristics of the best ionic conductors of the NASICON type.« less

[Arf6, RalA and BIRC5 protein expression in non small cell lung cancer].

PubMed

Knizhnik, A V; Kovaleva, O B; Laktionov, K K; Mochal'nikova, V V; Komel'kov, A V; Chevkina, E M; Zborovskaia, I B

2011-01-01

Evaluation of tumor markers expression pattern which determines individual progression parameters is one of the major topics in molecular oncopathology research. This work presents research on expression analysis of several Ras-Ral associated signal transduction pathway proteins (Arf6, RalA and BIRC5) in accordance with clinical criteria in non small cell lung cancer patients. Using Western-blot analysis and RT-PCR Arf6, RalA and BIRC5 expression has been analyzed in parallel in 53 non small cell lung cancer samples of different origin. Arf6 protein expression was elevated in 55% non small cell lung cancer tumor samples in comparison with normal tissue. In the group of squamous cell lung cancer Arf6 expression elevation was observed more often. RalA protein expression was decreased in comparison to normal tissue samples in 64% of non small cell lung cancer regardless to morphological structure. Correlation between RalA protein expression decrease and absence of regional metastases was revealed for squamous cell lung cancer. BIRC5 protein expression in tumor samples versus corresponding normal tissue was 1.3 times more often elevated in the squamous cell lung cancer group (in 76% tumor samples). At the same time elevation of BIRC5 expression was fixed only in 63% of adenocarcinoma tumor samples. A statistically significant decrease (p = 0.0158) of RalA protein expression and increase (p = 0.0498) of Arf6 protein expression in comparison with normal tissue was found for T1-2N0M0 and T1-2N1-2M0 groups of squamous cell lung cancer correspondingly.

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

PubMed

Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

2008-02-01

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

Status of diffused junction p+n InP solar cells for space applications

NASA Technical Reports Server (NTRS)

Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

1994-01-01

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Status of diffused junction p+n InP solar cells for space applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Faur, M.; Goradia, C.; Faur, M.

1994-09-01

Recently, the authors have succeeded in fabricating diffused junction p{sup +}n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V{sub OC}) of 887.6 mV, which, to the best of their knowledge, is higher than previously reported V{sub OC} values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating andmore » emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p{sup +} InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.« less

Mechanical and thermodynamic properties of AlX (X = N, P, As) compounds

NASA Astrophysics Data System (ADS)

Xu, Lifang; Bu, Wei

2017-09-01

The Vickers hardness of various AlX (X = N, P, As) compound polymorphs were calculated with the bond resistance model. Thermodynamic properties, such as vibrational entropy, constant volume specific heat and Debye temperatures, were calculated using phonon dispersion relations and phonon density of states (DOS). The calculated values are in good agreement with the previous experimental and theoretical data. For the same structure of AlX (X = N, P, As) compounds, their hardness and Debye temperatures both decrease with the X atomic number. The wurtzite (wz) and zincblende (zb) structures of the same compounds AlX share an almost identical hardness, but have different Debye temperatures. The difference between wz and zb structures increases as the atomic number of X increases. The thermodynamic properties reveal that the constant volume specific heat approaches the Dulong-Petit rule at high temperatures.

Avian P1 antigens inhibit agglutination mediated by P fimbriae of uropathogenic Escherichia coli.

PubMed Central

Johnson, J R; Swanson, J L; Neill, M A

1992-01-01

Whole egg white from pigeon, dove, and cockatiel eggs, as well as the ovomucoid fraction of pigeon egg white, exhibited strong P1 antigenic activities and inhibited agglutination of human P1 erythrocytes and of digalactoside-coated latex beads by P-fimbriated Escherichia coli strains. In contrast, chicken egg white exhibited only weak P1 antigenic activity and had little impact on P-fimbrial agglutination. These preparations did not affect hemagglutination by E. coli strains expressing mannose-resistant adhesins other than P fimbriae, i.e., Dr, F1845, and S adhesins. Human anti-P1 serum diminished the P-fimbrial inhibitory activities of pigeon egg white and pigeon ovomucoid. Pigeon ovomucoid was equipotent on a molar basis with globoside, and the pigeon, dove, and cockatiel egg white preparations were equipotent with each other in P-fimbrial inhibition. Incubation of p erythrocytes in whole egg whites or in pigeon ovomucoid did not render them agglutinable by P-fimbriated bacteria, whereas incubation in globoside did. These data demonstrate that whole egg whites (and their ovomucoid fraction) from members of the families Columbidae (pigeons and doves) and Psittacidae (parrots) specifically and potently inhibit P-fimbrial agglutination, probably by providing P1 antigen as a receptor for the P-fimbrial adhesin. Avian egg white preparations may facilitate adhesin characterization of wild-type uropathogenic strains and may useful in preventing upper urinary tract infections due to P-fimbriated E. coli. PMID:1346125

Measurement of the relative yields of ψ (2 S ) to ψ (1 S ) mesons produced at forward and backward rapidity in p +p , p +Al , p +Au , and 3He+Au collisions at √{sNN}=200 GeV

NASA Astrophysics Data System (ADS)

Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Bownes, E. K.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Chujo, T.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Diss, P. B.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Dusing, J. P.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Glenn, A.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kanda, S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, G. W.; Kim, M.; Kimball, M. L.; Kimelman, B.; Kincses, D.; Kistenev, E.; Kitamura, R.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Komkov, B.; Kotler, J. R.; Kotov, D.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Loggins, V.-R.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendez, A. R.; Mendoza, M.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Niida, T.; Nishimura, S.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Press, C. J.; Pun, A.; Purschke, M. L.; Rak, J.; Ramson, B. J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Rubin, J. G.; Runchey, J.; Safonov, A. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silva, J. A.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stepanov, M.; Stien, H.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takeda, A.; Taketani, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; White, A. S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

2017-03-01

The PHENIX Collaboration has measured the ratio of the yields of ψ (2 S ) to ψ (1 S ) mesons produced in p +p , p +Al , p +Au , and 3He+Au collisions at √{s NN}=200 GeV over the forward and backward rapidity intervals 1.2 <|y |<2.2 . We find that the ratio in p +p collisions is consistent with measurements at other collision energies. In collisions with nuclei, we find that in the forward (p -going or 3He-going) direction, the relative yield of ψ (2 S ) mesons to ψ (1 S ) mesons is consistent with the value measured in p +p collisions. However, in the backward (nucleus-going) direction, the ψ (2 S ) meson is preferentially suppressed by a factor of ˜2 . This suppression is attributed in some models to the breakup of the weakly bound ψ (2 S ) meson through final-state interactions with comoving particles, which have a higher density in the nucleus-going direction. These breakup effects may compete with color screening in a deconfined quark-gluon plasma to produce sequential suppression of excited quarkonia states.

The direct measurement of the 3 3P0-3 3P1 fine-structure interval and the gJ-factor of atomic silicon by laser magnetic resonance

NASA Technical Reports Server (NTRS)

Evenson, K. M.; Beltran-Lopez, V.; Ley-Koo, E.; Inguscio, M.

1984-01-01

The J - 1 fine structure interval and the g-factor of the 3P1 state have been determined with high precision in the present laser magnetic resonance measurements of the ground 3p2 3P multiplet of atomic Si. Delta-E(3P1-3P0) = 2,311,755.6(7) MHz, and gJ(3P1) = 1.500830(70). Single-configuration calculations of gJ for 3P1 and 3P2 yield a value for the latter which, at 1.501095, is noted to differ by an unexpectedly large margin from the experimental value.

A large Indian family with rearrangement of chromosome 4p16 and 3p26.3 and divergent clinical presentations.

PubMed

Iype, Thomas; Alakbarzade, Vafa; Iype, Mary; Singh, Royana; Sreekantan-Nair, Ajith; Chioza, Barry A; Mohapatra, Tribhuvan M; Baple, Emma L; Patton, Michael A; Warner, Thomas T; Proukakis, Christos; Kulkarni, Abhi; Crosby, Andrew H

2015-11-10

The deletion of the chromosome 4p16.3 Wolf-Hirschhorn syndrome critical region (WHSCR-2) typically results in a characteristic facial appearance, varying intellectual disability, stereotypies and prenatal onset of growth retardation, while gains of the same chromosomal region result in a more variable degree of intellectual deficit and dysmorphism. Similarly the phenotype of individuals with terminal deletions of distal chromosome 3p (3p deletion syndrome) varies from mild to severe intellectual deficit, micro- and trigonocephaly, and a distinct facial appearance. We investigated a large Indian five-generation pedigree with ten affected family members in which chromosomal microarray and fluorescence in situ hybridization analyses disclosed a complex rearrangement involving chromosomal subregions 4p16.1 and 3p26.3 resulting in a 4p16.1 deletion and 3p26.3 microduplication in three individuals, and a 4p16.1 duplication and 3p26.3 microdeletion in seven individuals. A typical clinical presentation of WHS was observed in all three cases with 4p16.1 deletion and 3p26.3 microduplication. Individuals with a 4p16.1 duplication and 3p26.3 microdeletion demonstrated a range of clinical features including typical 3p microdeletion or 4p partial trisomy syndrome to more severe neurodevelopmental delay with distinct dysmorphic features. We present the largest pedigree with complex t(4p;3p) chromosomal rearrangements and diverse clinical outcomes including Wolf Hirschorn-, 3p deletion-, and 4p duplication syndrome amongst affected individuals.

Effects of Magnetic Field and Rotation on 3P2 Superfluidity in Neutron Stars

NASA Astrophysics Data System (ADS)

Masuda, Kota; Nitta, Muneto

2014-09-01

It is believed that an anisotropic 3P2 superfluid state is realized in the core of neutron stars. Historically, a lot of works (Anderson et al. (1961), Hoffberg et al. (1970) and Tamagaki (1970)) discussed the properties of 3P2 superfluid state. Ginzburg-Landau (GL) equation was derived by Fujita, Tsuneto (1972) and Richardson (1972). After that, Mermin (1974) solved the problem of minimizing GL free energy density for d-wave pairing and showed what ground states are realized. By using these results, Sauls and Serene (1978) concluded that the unitary phase is realized in BCS limit, and Sauls et al. (1982) showed 3P2 vortices have a spontaneous magnetization. In this presentation, we firstly introduce GL equation and show some analogy to that of spin2-BEC. In BCS limit, degenerate ground states are parameterized by one parameter. We show effects of gradient terms, magnetic field and rotation on ground states and half-quantized 3P2 vortices are the most stable states under certain conditions. Next, by using an anisotropic GL equation, we discuss a spontaneous magnetization caused by half-quantized 3P2 vortices and compare results with that of integer vortices. Finally, we comment on possible effects of 3P2 superfluid state on neutron star observables. It is believed that an anisotropic 3P2 superfluid state is realized in the core of neutron stars. Historically, a lot of works (Anderson et al. (1961), Hoffberg et al. (1970) and Tamagaki (1970)) discussed the properties of 3P2 superfluid state. Ginzburg-Landau (GL) equation was derived by Fujita, Tsuneto (1972) and Richardson (1972). After that, Mermin (1974) solved the problem of minimizing GL free energy density for d-wave pairing and showed what ground states are realized. By using these results, Sauls and Serene (1978) concluded that the unitary phase is realized in BCS limit, and Sauls et al. (1982) showed 3P2 vortices have a spontaneous magnetization. In this presentation, we firstly introduce GL equation and

27Al, 47,49Ti, 31P, and 13C MAS NMR Study of VX, GD, and HD Reactions with Nanosize Al2O3, Conventional Al2O3 and TiO2, and Aluminum and Titanium Metal

DTIC Science & Technology

2007-01-01

The alumina was used as received. Anatase, rutile, aluminum, and titania metal powders, titanium (IV) isopropoxide , and pinacolyl methylphosphonate...Synthesis. Titanophosphonate synthesis was adapted from Mutin et al.4 using titanium (IV) isopropoxide (TIP) and pinacolyl methylphosphonate (PMPA...REPORT 27Al, 47,49Ti, 31P, and 13C MAS NMR Study of VX, GD, and HD Reactions with Nanosize Al2O3, Conventional Al2O3 and TiO2, and Aluminum and Titanium

Analysis of spectra of 3s-3p and 3p-3d transitions of highly-charged copper ions

NASA Astrophysics Data System (ADS)

Su, M. G.; Min, Q.; He, S. Q.; Wu, L.; Sun, R.; Ding, X. B.; Sun, D. X.

2017-08-01

Beam-foil excited spectra in the range of 160-360 Å from highly charged copper ions were identified with the aid of the National Institute of Standards and Technology Atomic Spectra Database and theoretical calculations with Cowan and Flexible Atomic Code (FAC) calculations. Spectra arising from 3s-3p and 3p-3d transitions of Cu13+-Cu22+ ions were considered. The ion fraction at an ion beam energy of 110 MeV was estimated from the equilibrium charge distribution of the fast ion beams after passing through the solid. The corresponding simulated spectra were in good agreement with the experimental result. Our Cowan and FAC calculation results should be useful for further spectral identification and lifetime measurements of highly charged copper ions.

The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

NASA Astrophysics Data System (ADS)

Li, Lei; Liu, Lei; Wang, Lei; Li, Ding; Song, Jie; Liu, Ningyang; Chen, Weihua; Wang, Yuzhou; Yang, Zhijian; Hu, Xiaodong

2012-09-01

AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type Al0.15Ga0.85N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5×109 cm-2 without AlN IL to the maximum of 1×1010 cm-2 at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type Al x Ga1- x N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs.

Spin Observables for the ^3He(p,2p)^d_pn Proton Knockout Reaction at 497 MeV

NASA Astrophysics Data System (ADS)

Häusser, O.; Melconian, D.; Cummings, W. J.; Larson, B.; Lorenzon, W.; Brash, E. J.; Yen, S.; Walden, P.; Abegg, R.; Delheij, P. P. J.; Oelfke, U.; O'Donnell, J. M.; Roos, P. G.; Chant, N. S.; Epstein, M. B.; Aniol, K.; Rutt, P. M.

1997-10-01

Studies of the spin structure of ^3He are important and timely since ^3 He is used worldwide to investigate fundamental properties of the neutron. Unlike in previous (p,2p) knockout experiments, we were able to resolve the d and pn final states in the ^3He(p,2p) reaction using the two-arm magnetic spectrometer system DASS at TRIUMF. A cyclotron tune was developed to maintain the resolution of the 497 MeV proton beam at <= 0.7 MeV. The target consisted of 9 atm. ^3He gas, laser polarized to 70-80%. The spin observables A_000N, A_00N0 and A_00NN are compared to PWIA and DWIA calculations. A_00NN(d) is insensitive to distortion effects and provides a test of ^3He ground state wavefunctions [1-3]. The observables for the 3-body breakup channel are close to those for free (pp) scattering and provide information on small J=1 admixtures in the pn final state. 1. I.R. Afnan and N.D. Birrell, Phys. Rev. C16, 823 (1977). 2. Ch. Hajduk and P.U. Sauer, Nucl. Phys. A369, 321 (1981). 3. C. Ciofi degli Atti, E. Pace and G. Salme, Phys. Lett. B141, 14 (1984).

Structure investigation of fluorinated aluminophosphate ULM-3 Al templated by 3-methylaminopropylamine

NASA Astrophysics Data System (ADS)

Zabukovec Logar, Natasa; Mali, Gregor; Rajic, Nevenka; Jevtic, Sanja; Rangus, Mojca; Golobic, Amalija; Kaucic, Venceslav

2010-05-01

A single-crystal X-ray diffraction analysis of an open-framework aluminophosphate ULM-3 Al prepared by 3-methylaminopropylamine (MAPA) as structure-directing agent revealed an orthorhombic Pcab symmetry ( a=9.9949(4) Å, b=15.8229(7) Å, c=18.1963(5) Å, R=0.0648, Z=8, unit cell formula [Al 24P 24O 96F 16·C 32H 112N 16]), which differs from the Pbc2 1 symmetry of the structural analogue prepared in the presence of 1,4-diaminobutane. The 27Al, 31P, 19F, 13C and 1H NMR investigations, which were performed to study in detail MAPA arrangement inside the framework as well as the interactions of MAPA with the aluminophosphate host, confirmed the crystal symmetry and the proposed hydrogen bonding scheme between the template and the framework.

FIRST PRINCIPLES STUDY ON ELECTRONIC AND OPTICAL PROPERTIES OF Al-DOPED γ-Ge3N4

NASA Astrophysics Data System (ADS)

Ding, Y. C.; Xiang, A. P.; Zhu, X. H.; Luo, J.; Hu, X. F.

2012-12-01

First principles study of the structural, electronic and optical properties of Al-doped γ-Ge3N4 with different concentration has been reported using the pseudo-potential plane wave method within the generalized gradient approximation (GGA). The binding energy and the formation energy suggest that Aluminum (Al) impurities prefer to substitute Ge at octahedral sites. Different doping concentrations are considered and the corresponding density of states (DOS) are analyzed. Calculated DOS indicates that there are holes in the top of the valance band after doping, meaning a p-type doping. We study the complex dielectric function, the absorption coefficient, and the electron energy loss spectra. It is demonstrated that for the low Al concentration, the material exhibits the dielectric behavior and for the high Al concentration, the material has possibilities to exhibit some metallic behavior. The γ-Ge3N4 doped with Al has a much higher static dielectric constant than undoped γ-Ge3N4, implying its potential applications in electronics and optics.

Up-regulation of miR-325-3p suppresses pineal aralkylamine N-acetyltransferase (Aanat) after neonatal hypoxia-ischemia brain injury in rats.

PubMed

Yang, Yuanyuan; Sun, Bin; Huang, Jian; Xu, Lixiao; Pan, Jian; Fang, Chen; Li, Mei; Li, Gen; Tao, Yanfang; Yang, Xiaofeng; Wu, Ying; Miao, Po; Wang, Ying; Li, Hong; Ren, Jing; Zhan, Meiqin; Fang, Yiping; Feng, Xing; Ding, Xin

2017-08-01

Survivors of hypoxic-ischemic brain damage (HIBD), besides impairment of psychomotor development, often develop circadian rhythm disorders, although the underlying mechanisms are largely unknown. Here, we first verified that mRNA and protein expression of pineal aralkylamine N-acetyltransferase (Aanat), a key regulator for melatonin (MT) synthesis, along with MT, were severely impaired after HIBD. In addition, we demonstrated that neonatal HIBD disrupted the circadian rhythmicity of locomotor activities in juvenile rats. Based on bioinformatics analysis of a high throughput screening of miRNA expression changes after HIBD (Ding et al., 2015), we identified one microRNA, miR-325-3p, as a potential candidate responsible for the down regulation of Aanat after HIBD. Luciferase reporter assays demonstrated a specific interaction between miR-325-3p and Aanat mRNA 3'-UTR. miR-325-3p blocked norepinephrine (NE) induced Aanat activation in cultured pinealocytes. In addition, miR-325-3p inhibition partially rescued Aanat induction by NE, which was significantly reduced under oxygen glucose deprivation. By elucidating the role of pineal miR-325-3p on Aanat expression upon injury, our study provides new insights into the pathophysiological mechanisms of circadian dysfunction and potential therapeutic targets after HIBD. Copyright © 2017 Elsevier B.V. All rights reserved.

Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

PubMed

Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

2017-09-27

Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

PubMed Central

Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

2011-01-01

Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

New superhindered polydentate polyphosphine ligands P(CH2CH2P(t)Bu2)3, PhP(CH2CH2P(t)Bu2)2, P(CH2CH2CH2P(t)Bu2)3, and their ruthenium(II) chloride complexes.

PubMed

Gilbert-Wilson, Ryan; Field, Leslie D; Bhadbhade, Mohan M

2012-03-05

The synthesis and characterization of the extremely hindered phosphine ligands, P(CH(2)CH(2)P(t)Bu(2))(3) (P(2)P(3)(tBu), 1), PhP(CH(2)CH(2)P(t)Bu(2))(2) (PhP(2)P(2)(tBu), 2), and P(CH(2)CH(2)CH(2)P(t)Bu(2))(3) (P(3)P(3)(tBu), 3) are reported, along with the synthesis and characterization of ruthenium chloro complexes RuCl(2)(P(2)P(3)(tBu)) (4), RuCl(2)(PhP(2)P(2)(tBu)) (5), and RuCl(2)(P(3)P(3)(tBu)) (6). The bulky P(2)P(3)(tBu) (1) and P(3)P(3)(tBu) (3) ligands are the most sterically encumbered PP(3)-type ligands so far synthesized, and in all cases, only three phosphorus donors are able to bind to the metal center. Complexes RuCl(2)(PhP(2)P(2)(tBu)) (5) and RuCl(2)(P(3)P(3)(tBu)) (6) were characterized by crystallography. Low temperature solution and solid state (31)P{(1)H} NMR were used to demonstrate that the structure of RuCl(2)(P(2)P(3)(tBu)) (4) is probably analogous to that of RuCl(2)(PhP(2)P(2)(tBu)) (5) which had been structurally characterized.

Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction

NASA Astrophysics Data System (ADS)

Yamei, Wu; Ruixia, Yang; Hanmin, Tian; Shuai, Chen

2016-05-01

Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CH3NH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The photoelectric properties of the CH3NH3PbI3/p-Si heterojunction are studied by testing the current-voltage (I-V) with and without illumination and capacitance-voltage (C-V) characteristics. It turns out from the I-V curve without illumination that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of ±5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current (Isc) of 0.16 μA and an open circuit voltage (Voc) of about 10 mV The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor (MIS) structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This parallel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3PbI3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated. Project supported by the Hebei Province Natural Science Foundation of China (No. F2014202184) and the Tianjin Natural Science Foundation of China (No. 15JCZDJC37800).

Elastic behaviour and high-pressure phase transition of the P21/n LiAlGe2O6pyroxene

NASA Astrophysics Data System (ADS)

Artac, Andreas; Miletich-Pawliczek, Ronald; Nestola, Fabrizio; Redhammer, Günther J.; Secco, Luciano

2014-05-01

In a recent work by Redhammer et al. (2012), investigating a synthetic pyroxene sample with composition LiAlGe2O6, a new space group for the big family of pyroxenes has been surprisingly discovered renewing the interest for Li-bearing pyroxene compounds. Actually, the authors of that work intended to investigate the effect of the Si-Ge substitution on the high-pressure behaviour and possibly on the phase transition with respect to spodumene, LiAlSi2O6, investigated by Arlt and Angel in 2000. Spodumene in fact, not only shows a strong first order phase transition at 3.19 GPa from C2/c to P21/c but the low symmetry C2/c shows the greatest bulk modulus never found in pyroxenes (i.e. 144.2 GPa with the first pressure derivative fixed to 4). Redhammer et al. (2012) discovered that substituting Si for Ge in the spodumene structure the effect is dramatic in terms of symmetry change at room conditions with the Ge-spodumene showing a P21/n space group, first discovery of such symmetry in the big family of pyroxene. In this work we loaded one crystal of LiAlGe2O6 in a diamond-anvil cell and investigated the elastic behaviour and its possible high-pressure phase transition by single-crystal X-ray diffraction. In detail, we measured the unit-cell parameters using a Huber four-circle diffractometer equipped with a point detector up to about 9 GPa. The crystal structure was measured at different pressures loading simultaneously two fragments of the same crystal with a different orientation in the same diamond-anvil cell in order to cover a wider portion of the reciprocal space. The intensity data were measured on a STADI IV four-circle diffractometer equipped with a CCD using a diamond-backing plate cell, which gives better structural results with respect to a beryllium backing plate one (i.e. Periotto et al. 2011). The first important result of our work is that we found at about 5.2 GPa a very strong first-order phase transformation from P21/n to P21/c and this is the first

High lying energy positions of doubly (2p ns) 1,3P° and (2p nd) 1,3P° excited states of the beryllium atom

NASA Astrophysics Data System (ADS)

Sakho, I.

2011-12-01

The Screening Constant by Unit Nuclear Charge (SCUNC) method is used to study (2p ns) 1,3P° and (2p nd) 1,3P° autoionizing states of the beryllium atom. Energy positions are reported up to n=20. In addition, resonance widths of the (2p ns) 1P° states also presented. The current results compared very well to available theoretical and experimental literature values up to n=15. The accurate data presented in this work may be of interest for future experimental and theoretical studies in the photoabsorption spectrum of Be.

A naphthalene exciplex based Al3+ selective on-type fluorescent probe for living cells at the physiological pH range: experimental and computational studies.

PubMed

Banerjee, Arnab; Sahana, Animesh; Das, Sudipta; Lohar, Sisir; Guha, Subarna; Sarkar, Bidisha; Mukhopadhyay, Subhra Kanti; Mukherjee, Asok K; Das, Debasis

2012-05-07

2-((Naphthalen-6-yl)methylthio)ethanol (HL) was prepared by one pot synthesis using 2-mercaptoethanol and 2-bromomethylnaphthalene. It was found to be a highly selective fluorescent sensor for Al(3+) in the physiological pH (pH 7.0-8.0). It could sense Al(3+) bound to cells through fluorescence microscopy. Metal ions like Mn(2+), Fe(3+), Co(2+), Ni(2+), Cu(2+), Zn(2+), Ag(+), Cd(2+), Hg(2+), Cr(3+) and Pb(2+) did not interfere. No interference was also observed with anions like Cl(-), Br(-), F(-), SO(4)(2-), NO(3)(-), CO(3)(2-), HPO(4)(2-) and SCN(-). Experimentally observed structural and spectroscopic features of HL and its Al(3+) complex have been substantiated by computational calculations using density functional theory (DFT) and time dependent density functional theory (TDDFT).

Stereodynamics of Ne(3P2) reacting with Ar, Kr, Xe, and N2

NASA Astrophysics Data System (ADS)

Zou, Junwen; Gordon, Sean D. S.; Tanteri, Silvia; Osterwalder, Andreas

2018-04-01

Stereodynamics experiments of Ne(3P2) reacting with Ar, Kr, Xe, and N2 leading to Penning and associative ionization have been performed in a crossed molecular beam apparatus. A curved magnetic hexapole was used to state-select and polarize Ne(3P2) atoms which were then oriented in a rotatable magnetic field and crossed with a beam of Ar, Kr, Xe, or N2. The ratio of associative to Penning ionization was recorded as a function of the magnetic field direction for collision energies between 320 cm-1 and 500 cm-1. Reactivities are obtained for individual states that differ only in Ω, the projection of the neon total angular momentum vector on the inter-particle axis. The results are rationalized on the basis of a model involving a long-range and a short-range reaction mechanism. Substantially lower probability for associative ionization was observed for N2, suggesting that predissociation plays a critical role in the overall reaction pathway.

Evaluation of nutrients removal (NO3-N, NH3-N and PO4-P) with Chlorella vulgaris, Pseudomonas putida, Bacillus cereus and a consortium of these microorganisms in the treatment of wastewater effluents.

PubMed

Gómez-Guzmán, Abril; Jiménez-Magaña, Sergio; Guerra-Rentería, A Suggey; Gómez-Hermosillo, César; Parra-Rodríguez, F Javier; Velázquez, Sergio; Aguilar-Uscanga, Blanca Rosa; Solis-Pacheco, Josue; González-Reynoso, Orfil

2017-07-01

In this research removal of NH 3 -N, NO 3 -N and PO 4 -P nutrients from municipal wastewater was studied, using Chlorella vulgaris, Pseudomonas putida, Bacillus cereus and an artificial consortium of them. The objective is to analyze the performance of these microorganisms and their consortium, which has not been previously studied for nutrient removal in municipal wastewater. A model wastewater was prepared simulating the physicochemical characteristics found at the wastewater plant in Chapala, Mexico. Experiments were carried out without adding an external carbon source. Results indicate that nutrient removal with Chlorella vulgaris was the most efficient with a removal of 24.03% of NO 3 -N, 80.62% of NH 3 -N and 4.30% of PO 4 -P. With Bacillus cereus the results were 8.40% of NO 3 -N, 28.80% of NH 3 -N and 3.80% of PO 4 -P. The removals with Pseudomonas putida were 2.50% of NO 3 -N, 41.80 of NH 3 -N and 4.30% of PO 4 -P. The consortium of Chlorella vulgaris-Bacillus cereus-Pseudomonas putida removed 29.40% of NO 3 -N, 4.2% of NH 3 -N and 8.4% of PO 4 -P. The highest biomass production was with Bacillus cereus (450 mg/l) followed by Pseudomonas putida (444 mg/l), the consortium (205 mg/l) and Chlorella vulgaris (88.9 mg/l). This study highlights the utility of these microorganisms for nutrient removal in wastewater treatments.

Inactivation of Cytochrome P450 (P450) 3A4 but not P450 3A5 by OSI-930, a Thiophene-Containing Anticancer DrugS⃞

PubMed Central

Lin, Hsia-lien; Zhang, Haoming; Medower, Christine; Johnson, William W.

2011-01-01

An investigational anticancer agent that contains a thiophene moiety, 3-[(quinolin-4-ylmethyl)-amino]-N-[4-trifluoromethox)phenyl] thiophene-2-carboxamide (OSI-930), was tested to investigate its ability to modulate the activities of several cytochrome P450 enzymes. Results showed that OSI-930 inactivated purified, recombinant cytochrome P450 (P450) 3A4 in the reconstituted system in a mechanism-based manner. The inactivation was dependent on cytochrome b5 and required NADPH. Catalase did not protect against the inactivation. No inactivation was observed in studies with human 2B6, 2D6, or 3A5 either in the presence or in the absence of b5. The inactivation of 3A4 by OSI-930 was time- and concentration-dependent. The inactivation of the 7-benzyloxy-4-(trifluoromethyl)coumarin catalytic activity of 3A4 was characterized by a KI of 24 μM and a kinact of 0.04 min−1. This KI is significantly greater than the clinical OSI-930 Cmax of 1.7 μM at the maximum tolerated dose, indicating that clinical drug interactions of OSI-930 via this pathway are not likely. Spectral analysis of the inactivated protein indicated that the decrease in the reduced CO spectrum at 450 nm was comparable to the amount of inactivation, thereby suggesting that the inactivation was primarily due to modification of the heme. High-pressure liquid chromatography (HPLC) analysis with detection at 400 nm showed a loss of heme comparable to the activity loss, but a modified heme was not detected. This result suggests either that the heme must have been modified enough so as not to be observed in a HPLC chromatograph or, possibly, that it was destroyed. The partition ratio for the inactivation of P450 3A4 was approximately 23, suggesting that this P450 3A4-mediated pathway occurs with approximately 4% frequency during the metabolism of OSI-930. Modeling studies on the binding of OSI-930 to the active site of the P450 3A4 indicated that OSI-930 would be oriented properly in the active site for oxidation

Effect of ball milling and dynamic compaction on magnetic properties of Al2O3/Co(P) composite particles

NASA Astrophysics Data System (ADS)

Denisova, E. A.; Kuzovnikova, L. A.; Iskhakov, R. S.; Bukaemskiy, A. A.; Eremin, E. V.; Nemtsev, I. V.

2014-05-01

The evolution of the magnetic properties of composite Al2O3/Co(P) particles during ball milling and dynamic compaction is investigated. To prepare starting composite particles, the Al2O3 granules were coated with a Co95P5 shell by electroless plating. The magnetic and structural properties of the composite particles are characterized by scanning electron microscopy, X-ray diffraction, and the use of the Physical Property Measurement System. The use of composite core-shell particles as starting powder for mechanoactivation allows to decrease treatment duration to 1 h and to produce a more homogeneous bulk sample than in the case of the mixture of Co and Al2O3 powders. The magnetic properties of the milled composite particles are correlated with changes in the microstructure. Reduction in grain size of Co during milling leads to an increase of the volume fraction of superparamagnetic particles and to a decrease of the saturation magnetization. The local magnetic anisotropy field depends on the amount of hcp-Co phase in sample. The anisotropy field value decreases from 8.4 kOe to 3.8 kOe with an increase in milling duration up to 75 min. The regimes of dynamic compaction were selected so that the magnetic characteristics—saturation magnetization and coercive field—remained unchanged.

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

NASA Astrophysics Data System (ADS)

le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

2018-05-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

Microwave spectroscopy of the 1 s n p P3J fine structure of high Rydberg states in 4He

NASA Astrophysics Data System (ADS)

Deller, A.; Hogan, S. D.

2018-01-01

The 1 s n p P3J fine structure of high Rydberg states in helium has been measured by microwave spectroscopy of single-photon transitions from 1 s n s S31 levels in pulsed supersonic beams. For states with principal quantum numbers in the range from n =34 to 36, the J =0 →2 and J =1 →2 fine structure intervals were both observed. For values of n between 45 and 51 only the larger J =0 →2 interval was resolved. The experimental results are in good agreement with theoretical predictions. Detailed characterization of residual uncanceled electric and magnetic fields in the experimental apparatus and calculations of the Stark and Zeeman structures of the Rydberg states in weak fields were used to quantify systematic contributions to the uncertainties in the measurements.

Eukaryotic ribonucleases P/MRP: the crystal structure of the P3 domain.

PubMed

Perederina, Anna; Esakova, Olga; Quan, Chao; Khanova, Elena; Krasilnikov, Andrey S

2010-02-17

Ribonuclease (RNase) P is a site-specific endoribonuclease found in all kingdoms of life. Typical RNase P consists of a catalytic RNA component and a protein moiety. In the eukaryotes, the RNase P lineage has split into two, giving rise to a closely related enzyme, RNase MRP, which has similar components but has evolved to have different specificities. The eukaryotic RNases P/MRP have acquired an essential helix-loop-helix protein-binding RNA domain P3 that has an important function in eukaryotic enzymes and distinguishes them from bacterial and archaeal RNases P. Here, we present a crystal structure of the P3 RNA domain from Saccharomyces cerevisiae RNase MRP in a complex with RNase P/MRP proteins Pop6 and Pop7 solved to 2.7 A. The structure suggests similar structural organization of the P3 RNA domains in RNases P/MRP and possible functions of the P3 domains and proteins bound to them in the stabilization of the holoenzymes' structures as well as in interactions with substrates. It provides the first insight into the structural organization of the eukaryotic enzymes of the RNase P/MRP family.

A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

NASA Technical Reports Server (NTRS)

Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

1991-01-01

The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

Serum expression levels of microRNA-382-3p, -598-3p, -1246 and -184 in breast cancer patients.

PubMed

Fu, Lun; Li, Zhaoyun; Zhu, Jie; Wang, Pan; Fan, Guangmin; Dai, Yuechu; Zheng, Zhibao; Liu, Yang

2016-07-01

The purpose of the present study was to investigate the serum levels of microRNA (miRNA/miR)-382-3p, -598-3p, -1246 and -184 in breast cancer patients and to assess their feasibility as biomarkers for breast cancer screening. Serum samples were obtained from 100 breast cancer patients and 40 age-matched healthy control subjects in Taizhou Central Hospital (Taizhou, Zhejiang, China) between January 2013 and September 2014. The serum expression levels of miR-382-3p, -598-3p, -1246 and -184 were determined by stem-loop reverse transcription-quantitative polymerase chain reaction. Receiver operating characteristic curves were drawn to evaluate the sensitivity and specificity of the serum miRNA expression levels for the screening of breast cancer. miR-382-3p and -1246 were significantly upregulated in the serum of the breast cancer patients, while miR-598-3p and -184 were significantly downregulated. The sensitivity and specificity to detect breast cancer were as follows: miR-382-3p, 52.0 and 92.5%; miR-598-3p, 95.0 and 85.0%; miR-1246, 93.0 and 75.0%; and miR-184, 87.5 and 71.0%, respectively. The expression levels of the four serum miRNAs were not correlated with the patients' clinical stage. In summary, miR-382-3p, -598-3p, -1246 and -184 are all involved in the development of breast cancer, and are promising biomarkers for breast cancer detection.

Quasielastic charge-exchange reaction p/sup 3/ He. -->. n/sub F/ ppp at intermediate energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blinov, A.V.; Vanyushin, I.A.; Grechko, V.E.

1988-04-01

The principal characteristics of the quasielastic-charge-exchange reaction p/sup 3/He..-->..n/sub F/ppp are investigated by means of the liquid-hydrogen bubble chamber at our institute of diameter 80 cm, exposed in beams of /sup 3/He nuclei with momenta 2.5 and 5 GeV/c (the kinetic energy of the primary protons T/sub p/ in the rest system of the nucleus is respectively 0.318 and 0.978 GeV). The experimental data are compared with the predictions of the Glauber-Sitenko multiple-scattering theory and with the pole model taking into account the interaction of spectator nucleons in the final state. In the mass spectrum of the 3p system atmore » 3.05 GeV a well expressed structure is observed which is not described in the framework of the pole model. A possible resonance occurrence of this structure is discussed.« less

Controlled Pd(0)/t Bu3P Catalyzed Suzuki Cross-Coupling Polymerization of AB-Type Monomers with ArPd(t Bu3P)X or Pd2(dba)3/t Bu3P/ArX as the Initiator

DOE PAGES

Zhang, Honghai; Xing, Chun-Hui; Hu, Qiao-Sheng; ...

2015-02-05

The synthesis of well-defined and functionalized conjugated polymers, which are essential in the development of efficient organic electronics, through Suzuki cross-coupling polymerizations has been a challenging task. We developed controlled Pd(0)/t-Bu3P-catalyzed Suzuki cross-coupling polymerizations of AB-type monomers via the chain-growth mechanism with a series of in situ generated ArPd(t-Bu3P)X (X = I, Br, Cl) complexes as initiators. Among them, the combinations of Pd2(dba)3/t-Bu3P/p-BrC6H4I, Pd2(dba)3/t-Bu3P/p-BrC6H4CH2OH and Pd2(dba)3/t-Bu3P/p-PhCOC6H4Br were identified as highly robust initiator systems, resulting in polymers with predictable molecular weight and narrow polydispersity (PDI~1.13-1.20). In addition, Pd2(dba)3/t-Bu3P/p-BrC6H4CH2OH and Pd2(dba)3/t-Bu3P/p-PhCOC6H4Br initiator systems afforded functional polymers with >95% fidelity. Our results pavedmore » the road to access well-defined conjugated polymers, including conjugated polymers with complex polymer architectures such as block copolymers and branch copolymers.« less

Quasifree (p ,p N ) scattering of light neutron-rich nuclei near N =14

NASA Astrophysics Data System (ADS)

Díaz Fernández, P.; Alvarez-Pol, H.; Crespo, R.; Cravo, E.; Atar, L.; Deltuva, A.; Aumann, T.; Avdeichikov, V.; Beceiro-Novo, S.; Bemmerer, D.; Benlliure, J.; Bertulani, C. A.; Boillos, J. M.; Boretzky, K.; Borge, M. J. G.; Caamaño, M.; Cabanelas, P.; Caesar, C.; Casarejos, E.; Catford, W.; Cederkäll, J.; Chartier, M.; Chulkov, L. V.; Cortina-Gil, D.; Datta Pramanik, U.; Dillmann, I.; Elekes, Z.; Enders, J.; Ershova, O.; Estradé, A.; Farinon, F.; Fernández-Domínguez, B.; Fraile, L. M.; Freer, M.; Galaviz, D.; Geissel, H.; Gernhäuser, R.; Golubev, P.; Göbel, K.; Hagdahl, J.; Heftrich, T.; Heil, M.; Heine, M.; Heinz, A.; Henriques, A.; Holl, M.; Hufnagel, A.; Ignatov, A.; Johansson, H. T.; Jonson, B.; Jurčiukonis, D.; Kalantar-Nayestanaki, N.; Kanungo, R.; Kelic-Heil, A.; Knyazev, A.; Kröll, T.; Kurz, N.; Labiche, M.; Langer, C.; Le Bleis, T.; Lemmon, R.; Lindberg, S.; Machado, J.; Marganiec, J.; Moro, A. M.; Movsesyan, A.; Nacher, E.; Najafi, A.; Nikolskii, E.; Nilsson, T.; Nociforo, C.; Panin, V.; Paschalis, S.; Perea, A.; Petri, M.; Pietras, B.; Pietri, S.; Plag, R.; Reifarth, R.; Ribeiro, G.; Rigollet, C.; Rossi, D.; Röder, M.; Savran, D.; Scheit, H.; Simon, H.; Sorlin, O.; Syndikus, I.; Taylor, J. T.; Tengblad, O.; Thies, R.; Togano, Y.; Vandebrouck, M.; Velho, P.; Volkov, V.; Wagner, A.; Wamers, F.; Weick, H.; Wheldon, C.; Wilson, G.; Winfield, J. S.; Woods, P.; Yakorev, D.; Zhukov, M.; Zilges, A.; Zuber, K.; R³B Collaboration

2018-02-01

Background: For many years, quasifree scattering reactions in direct kinematics have been extensively used to study the structure of stable nuclei, demonstrating the potential of this approach. The R 3B collaboration has performed a pilot experiment to study quasifree scattering reactions in inverse kinematics for a stable 12C beam. The results from that experiment constitute the first quasifree scattering results in inverse and complete kinematics. This technique has lately been extended to exotic beams to investigate the evolution of shell structure, which has attracted much interest due to changes in shell structure if the number of protons or neutrons is varied. Purpose: In this work we investigate for the first time the quasifree scattering reactions (p ,p n ) and (p ,2 p ) simultaneously for the same projectile in inverse and complete kinematics for radioactive beams with the aim to study the evolution of single-particle properties from N =14 to N =15 . Method: The structure of the projectiles 23O, 22O, and 21N has been studied simultaneously via (p ,p n ) and (p ,2 p ) quasifree knockout reactions in complete inverse kinematics, allowing the investigation of proton and neutron structure at the same time. The experimental data were collected at the R3B -LAND setup at GSI at beam energies of around 400 MeV/u. Two key observables have been studied to shed light on the structure of those nuclei: the inclusive cross sections and the corresponding momentum distributions. Conclusions: The knockout reactions (p ,p n ) and (p ,2 p ) with radioactive beams in inverse kinematics have provided important and complementary information for the study of shell evolution and structure. For the (p ,p n ) channels, indications of a change in the structure of these nuclei moving from N =14 to N =15 have been observed, i.e., from the 0 d5 /2 shell to the 1 s1 /2 . This supports previous observations of a subshell closure at N =14 for neutron-rich oxygen isotopes and its weakening

The synthesis and structure of a chiral 1D aluminophosphate chain compound: d-Co(en){sub 3}[AlP{sub 2}O{sub 8}].6.5H{sub 2}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Peng; Li Jiyang; Yu Jihong

2005-06-15

A new chiral one-dimensional (1D) aluminophosphate chain compound [d-Co(en){sub 3}][AlP{sub 2}O{sub 8}].6.5H{sub 2}O (designated AlPO-CJ22) has been hydrothermally synthesized by using the optically pure d-Co(en){sub 3}I{sub 3} complex as the template. Single-crystal structural analysis reveals that its structure is built up from alternating connection of AlO{sub 4} and PO{sub 2}(=O{sub 2}) tetrahedra to form corner-shared Al{sub 2}P{sub 2} four-membered ring (4-MR) chains. The d-Co(en){sub 3}{sup 3+} complex cations extended along the 2{sub 1} screw axis interact with the inorganic chains through hydrogen-bonds of N...O atoms in a helical fashion. Optical rotation measurement shows that AlPO-CJ22 is chiral as with d-Co(en){submore » 3}{sup 3+} complex cations. Crystal data: orthorhombic, I2{sub 1}2{sub 1}2{sub 1}, a=8.5573(8)A, b=22.613(2)A, c=22.605(2)A, Z=8, R{sub 1}=0.067, wR{sub 2}=0.1291, and Flack parameter: -0.02(3). CCDC number: 254179. -0.02(3). CCDC number: 254179.« less

Theoretical speciation of ethylenediamine-N-(o-hydroxyphenylacetic)-N'-(p-hydroxyphenylacetic) acid (o,p-EDDHA) in agronomic conditions.

PubMed

Yunta, Felipe; García-Marco, Sonia; Lucena, Juan J

2003-08-27

The presence of ethylenediamine-N-(o-hydroxyphenylacetic)-N'-(p-hydroxyphenylacetic) acid (o,p-EDDHA) as the second largest component in commercial EDDHA iron chelates has recently been demonstrated. Here is reported the speciation of o,p-EDDHA by the application of a novel methodology through the determination of the complexing capacity, protonation, and Ca(2+), Mg(2+), Cu(2+), and Fe(3+) stability constants. The pM values and species distribution in solution, hydroponic, and soil conditions were obtained. Due to the para position of one phenol group in o,p-EDDHA, the protonation constants and Ca and Mg stability constants have different values from those of o,o-EDDHA and p,p-EDDHA regioisomers. o,p-EDDHA/Fe(3+) stability constants are higher than those of EDTA/Fe(3+) but lower than those of o,o-EDDHA/Fe(3+). The sequence obtained for pFe is o,o-EDDHA/Fe(3+) >/= o,p-EDDHA/Fe(3+) > EDTA/Fe(3+). o,p-EDDHA/Fe(3+) can be used as an iron chelate in hydroponic conditions. Also, it can be used in soils with limited Cu availability.

SLC52A2 [p.P141T] and SLC52A3 [p.N21S] causing Brown-Vialetto-Van Laere Syndrome in an Indian patient: First genetically proven case with mutations in two riboflavin transporters.

PubMed

Udhayabanu, Tamilarasan; Subramanian, Veedamali S; Teafatiller, Trevor; Gowda, Vykuntaraju K; Raghavan, Varun S; Varalakshmi, Perumal; Said, Hamid M; Ashokkumar, Balasubramaniem

2016-11-01

Brown-Vialetto-Van Laere Syndrome (BVVLS), a rare neurological disorder characterized by bulbar palsies and sensorineural deafness, is mainly associated with defective riboflavin transporters encoded by the SLC52A2 and SLC52A3 genes. Here we present a 16-year-old BVVLS patient belonging to a five generation consanguineous family from Indian ethnicity with two homozygous missense mutations viz., c.421C>A [p.P141T] in SLC52A2 and c.62A>G [p.N21S] in SLC52A3. Functional characterization based on 3 H-riboflavin uptake assay and live-cell confocal imaging revealed that the effect of mutation c.421C>A [p.P141T] identified in SLC52A2 had a slight reduction in riboflavin uptake; on the other hand, the c.62A>G [p.N21S] identified in SLC52A3 showed a drastic reduction in riboflavin uptake, which appeared to be due to impaired trafficking and membrane targeting of the hRFVT-3 protein. This is the first report presenting mutations in both riboflavin transporters hRFVT-2 and hRFVT-3 in the same BVVLS patient. Also, c.62A>G [p.N21S] in SLC52A3 appears to contribute more to the disease phenotype in this patient than c.421C>A [p.P141T] in SLC52A2. Copyright © 2016 Elsevier B.V. All rights reserved.

SLC52A2 [p.P141T] and SLC52A3 [p.N21S] causing Brown-Vialetto-Van Laere Syndrome in an Indian patient: First genetically proven case with mutations in two riboflavin transporters

PubMed Central

Udhayabanu, Tamilarasan; Subramanian, Veedamali S; Teafatiller, Trevor; Gowda, Vykuntaraju K; Raghavan, Varun S; Varalakshmi, Perumal; Said, Hamid M; Ashokkumar, Balasubramaniem

2017-01-01

Background Brown-Vialetto-Van Laere Syndrome (BVVLS), a rare neurological disorder characterized by bulbar palsies and sensorineural deafness, is mainly associated with defective riboflavin transporters encoded by the SLC52A2 and SLC52A3 genes. Methods Here we present a 16-year-old BVVLS patient belonging to a five generation consanguineous family from Indian ethnicity with two homozygous missense mutations viz., c.421C>A [p.P141T] in SLC52A2 and c.62A>G [p.N21S] in SLC52A3. Results Functional characterization based on 3H-riboflavin uptake assay and live-cell confocal imaging revealed that the effect of mutation c.421C>A [p.P141T] identified in SLC52A2 had a slight reduction in riboflavin uptake; on the other hand, the c.62A>G [p.N21S] identified in SLC52A3 showed a drastic reduction in riboflavin uptake, which appeared to be due to impaired trafficking and membrane targeting of the hRFVT-3 protein. Conclusions This is the first report presenting mutations in both riboflavin transporters hRFVT-2 and hRFVT-3 in the same BVVLS patient. Also, c.62A>G [p.N21S] in SLC52A3 appears to contribute more to the disease phenotype in this patient than c.421C>A [p.P141T] in SLC52A2. PMID:27702554

Na 3Cr 2P 3S 12 and K 3Cr 2P 3S 12: Two New One-Dimensional Thiophosphate Compounds with a Novel Structure

NASA Astrophysics Data System (ADS)

Coste, S.; Kopnin, E.; Evain, M.; Jobic, S.; Payen, C.; Brec, R.

2001-12-01

Two new alkali metal chromium thiophosphates, Na3Cr2P3S12 and K3Cr2P3S12, have been synthesized and their structure determined from single-crystal or powder X-ray diffraction analyses. These isostructural compounds, which exhibit a novel structural arrangement, crystallize in the monoclinic system (space group P21/c) with the cell parameters a=17.4076(10) Å, b=11.1723(10) Å, c=19.2502(11) Å, β=149.731(3)° (V=1887.1(2) Å3, Z=4) and a=17.9690(14) Å, b=12.0607(5) Å, c=19.3109(16) Å, β=150.008(3)° (V=2091.98(16) Å3, Z=4) for Na3Cr2P3S12 (I) and K3Cr2P3S12 (II), respectively. For (I), the single-crystal refinement led to R/Rw(F2)=0.0417/0.0650 (for 4125 independent reflections and 182 refined parameters). For (II), the Rietveld refinement led to Rp/Rwp=0.0181/0.0233 (for 90 refined parameters). In both materials, the structures consist of 1∞[Cr2P3S12]3- chains built upon two edge-sharing [CrS6] octahedra capped by two [PS4] tetrahedra defining isolated [Cr2P2S12]-8 entities. These entities are linked to each other through an extra [PS4] tetrahedral group. Magnetic measurements evidence antiferromagnetic coupling between Cr3+ cations. The charge balance of the phase is MI3CrIII2PV3S-II12.

Chromosome 3p12.3-p14.2 and 3q26.2-q26.32 are genomic markers for prognosis of advanced nasopharyngeal carcinoma.

PubMed

Sheu, Jim Jinn-Chyuan; Lee, Chia-Huei; Ko, Jenq-Yuh; Tsao, George S W; Wu, Chung-Chun; Fang, Chih-Yeu; Tsai, Fuu-Jen; Hua, Chun-Hung; Chen, Chi-Long; Chen, Jen-Yang

2009-10-01

Nasopharyngeal carcinoma is an epithelial malignancy with a remarkable racial and geographic distribution. Previous cytogenetic studies have shown nasopharyngeal carcinoma to be characterized by gross genomic aberrations. However, identification of susceptible gene loci in advanced nasopharyngeal carcinoma has been poorly discussed. A genome-wide survey of gene copy number changes was initiated with two nasopharyngeal carcinoma cell lines by array-based comparative genomic hybridization analysis. These alterations were confirmed by a parallel analysis with the data from the gene expression microarray and were validated by quantitative PCR. Clinical association of the defined target genes was analyzed by fluorescence in situ hybridization on 48 metastatic tumors. A high percentage of genes were consistently altered in dosage and expression levels with gain on 3q26.2-q26.32 and losses on 3p12.3-p14.2 and 9p21.3-p23. Six candidate genes, GPR160 (3q26.2-q27), SKIL (3q26), ADAMTS9 (3p14.2-p14.3), LRIG1 (3p14), MPDZ (9p22-p24), and ADFP (9p22.1) were validated by quantitative PCR. Fluorescence in situ hybridization studies revealed amplification of GPR160 (in 25% of cases) and SKIL (33%); and deletion of ADAMTS9 (30%), LRIG1 (35%), MPDZ (15%), and ADFP (15%). Clinical association analyses indicated a poor survival rate with genetic alterations at the defined 3p deletion (P = 0.0012) and the 3q amplification regions (P = 0.0114). The combined microarray technologies suggested novel candidate oncogenes, amplification of GPR160 and SKIL at 3q26.2-q26.32, and deletion of tumor suppressor genes ADAMTS9 and LRIG1 at 3p12.3-p14.2. Altered expression of these genes may be responsible for malignant progression and could be used as potential markers for nasopharyngeal carcinoma.

Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol; Park, Chan-Yong

2017-11-01

The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (˜16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave.

Common regions of deletion in chromosome regions 3p12 and 3p14.2 in primary clear cell renal carcinomas.

PubMed

Lubinski, J; Hadaczek, P; Podolski, J; Toloczko, A; Sikorski, A; McCue, P; Druck, T; Huebner, K

1994-07-15

Nearly all clear cell renal cell carcinomas (RCCs) exhibit loss of alleles on the short arm of chromosome 3. Loss and mutation at the von Hippel-Lindau (VHL) gene at 3p25 probably occurs in most RCCs and, since the VHL gene was recently cloned, data on VHL involvement in RCCs is accumulating. However, the region 3p14-p12, a region that contains the familial RCC-associated t(3;8)(p14.2;q24) chromosome translocation and the small cell lung carcinoma-associated homozygous deletion at 3p13-12, has also been reported to exhibit allele loss in a large fraction of RCCs. In order to focus future studies on potential suppressor genes in the 3p14-p12 region, we have studied allele loss in 30 RCCs with 9 polymorphic simple sequence repeat markers spanning 3p21.1-p12. Partial losses in the 3p21-p12 region were observed, allowing determination of common regions of loss of heterozygosity overlap in 15 RCCs. Results suggested that most RCCs exhibit loss in a region which brackets the t(3;8) familial chromosome translocation at 3p14.2, and some show additional deletions within the U2020 small cell lung carcinoma deletion at 3p12.

Studies of a series of [Ni(P(R)2N(Ph)2)2(CH3CN)]2+ complexes as electrocatalysts for H2 production: substituent variation at the phosphorus atom of the P2N2 ligand.

PubMed

Kilgore, Uriah J; Stewart, Michael P; Helm, Monte L; Dougherty, William G; Kassel, W Scott; DuBois, Mary Rakowski; DuBois, Daniel L; Bullock, R Morris

2011-11-07

A series of [Ni(P(R)(2)N(Ph)(2))(2)(CH(3)CN)](BF(4))(2) complexes containing the cyclic diphosphine ligands [P(R)(2)N(Ph)(2) = 1,5-diaza-3,7-diphosphacyclooctane; R = benzyl (Bn), n-butyl (n-Bu), 2-phenylethyl (PE), 2,4,4-trimethylpentyl (TP), and cyclohexyl (Cy)] have been synthesized and characterized. X-ray diffraction studies reveal that the cations of [Ni(P(Bn)(2)N(Ph)(2))(2)(CH(3)CN)](BF(4))(2) and [Ni(P(n-Bu)(2)N(Ph)(2))(2)(CH(3)CN)](BF(4))(2) have distorted trigonal bipyramidal geometries. The Ni(0) complex [Ni(P(Bn)(2)N(Ph)(2))(2)] was also synthesized and characterized by X-ray diffraction studies and shown to have a distorted tetrahedral structure. These complexes, with the exception of [Ni(P(Cy)(2)N(Ph)(2))(2)(CH(3)CN)](BF(4))(2), all exhibit reversible electron transfer processes for both the Ni(II/I) and Ni(I/0) couples and are electrocatalysts for the production of H(2) in acidic acetonitrile solutions. The heterolytic cleavage of H(2) by [Ni(P(R)(2)N(Ph)(2))(2)(CH(3)CN)](BF(4))(2) complexes in the presence of p-anisidine or p-bromoaniline was used to determine the hydride donor abilities of the corresponding [HNi(P(R)(2)N(Ph)(2))(2)](BF(4)) complexes. However, for the catalysts with the most bulky R groups, the turnover frequencies do not parallel the driving force for elimination of H(2), suggesting that steric interactions between the alkyl substituents on phosphorus and the nitrogen atom of the pendant amines play an important role in determining the overall catalytic rate. © 2011 American Chemical Society

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences

Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

NASA Astrophysics Data System (ADS)

An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

2016-12-01

Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

A study of 3π production in γp → n -π +π +π - and γ-p → Δ + +π +π -π - with CLAS at Jefferson Lab ->n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsaris, Aristedis

2016-02-22

Apart from the mesons that the constituent quark model predicts, QCD allows for additional states beyond the qq system. Previous experiments have performed partial wave analysis on pion-production data and claim observation of an exotic J PC = 1 -+ state decaying via p-π. The g12 experiment took place at Jefferson Lab using the CLAS spectrometer, a liquid hydrogen target was used and a tagged photon beam. By studying the reactions γp → n -π +π +π - and γp → Δ + +π +π -π -, the photoproduction of mesons decaying to 3-pi was studied using two different butmore » complimentary channels. Events are selected with low four-momentum transfer to the baryon, in order to enhance one pion exchange production. For both 3-pi systems the data exhibit two intermediate decays, p-pi and f 2π. For the γp → n -π +π +π - reaction over 600k events were acquired resulting in the largest 3 photoproduction dataset to date. The exotic J PC = 1 -+ partial wave does not show resonant behavior and more so it is strongly consistent with a non-resonant non-interfering wave relative to a resonant π 2(1670). Furthermore, the partial wave analysis shows production of the a 2(1320) and π 2(1670) mesons. For the first time we report observation of a photoproduced a 1(1260) meson. For the γp → Δ + +π +π -π - reaction nearly 350k events were analyzed. A partial wave analysis was performed for the first time on this channel. The a1(1260), a2(1320), and the 2(1670) mesons were observed. Observation of the a1(1260) confirms the result first reported in γp → n -π +π +π - reaction.« less

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

NASA Astrophysics Data System (ADS)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

NASA Technical Reports Server (NTRS)

Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

PubMed

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

PubMed Central

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and

Constructing effective photocatalytic purification system with P-introduced g-C3N4 for elimination of UO22+

NASA Astrophysics Data System (ADS)

Wu, Xi; Jiang, Shujuan; Song, Shaoqing; Sun, Chuanzhi

2018-02-01

Due to the inherent defects of precursor molecular structure, the limited effect of structure in the formed g-C3N4 will weaken the extension of delocalization of π electrons between the adjacent tri-s-triazine or heptazine units of g-C3N4, which thus leads to poor visible-light absorption, low utilization efficiency of charge carrier. Herein, P-introduced g-C3N4 (PC3N4) photocatalysts were constructed by partially replacing C with tributyl phosphate as precursor, and the as-designed PC3N4 photocatalysts were used to eliminate aqueous uranyl ion by photocatalytic reduction technology under visible-light irradiation. Experimental and DFT revealed that introduction of P into g-C3N4 significantly modified its electronic structure, as reflected by the narrowed band gap, enhanced visible-light absorption as well as improved transfer capability of photogenerated charge. Therefore, photocatalytic activity of PC3N4 was much better than that of pristine g-C3N4 and conventional reducing-type photocatalysts. This study suggests an efficient strategy for construct effective visible-light-responsive photocatalysts for radioactive environmental remediation.

NiO nanoparticles anchored on P-doped α-Fe2O3 nanoarrays: an efficient hole extraction p-n heterojunction photoanode for water oxidation.

PubMed

Li, Feng; Li, Jing; Zhang, Jie; Gao, Lili; Long, Xuefeng; Hu, Yiping; Li, Shuwen; Jin, Jun; Ma, Jiantai

2018-05-16

The photoelectrochemical (PEC) water splitting efficiency of hematite-based photoanode is still far from the theoretical value due to its poor surface reaction kinetics and high density of surface trapping states. To solve these drawbacks, a photoanode consisting of NiO nanoparticles anchored on a gradient P-doped α-Fe2O3 nanorod (NR) array (NiO/P-α-Fe2O3) was fabricated to achieve optimal light absorption and charge separation, and rapid surface reaction kinetic. Specifically, the photoanode with the NR arrays structure allowed high mass transport rate to be achieved while the P-doping effectively decreased surface trapping sites and improved the electrical conductivity of α-Fe2O3. Furthermore, the p-n junction formed between the NiO and P-α-Fe2O3 can further improve the PEC performance due to the efficient hole extraction property and water oxidization catalytic activity of NiO. Consequently, the NiO/P-α-Fe2O3 NR photoanode produced a high photocurrent density of 2.08 mA cm-2 at 1.23V vs. RHE and a 110 mV cathodic shift of the onset potential. This rational design of structure offers a new perspective in exploring high performance PEC photoanodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Where are χ _{cJ}(3P)?

NASA Astrophysics Data System (ADS)

Chen, Dian-Yong

2016-12-01

In the present work, we propose Y(4140) as the χ _{c1}(3P) state by studying the χ _{c1} π ^+ π ^- invariant mass spectrum of the B→ K χ _{c1} π ^+ π ^- process. In the Dbar{D} invariant mass spectrum of the B→ K Dbar{D} process, we find a new resonance with the mass and width to be ( 4083.0 ± 5.0) and (24.1 ± 15.4) MeV, respectively, which could be a good candidate of the χ _{c0}(3P) state. The theoretical investigations on the decay behaviors of the χ _{cJ}(3P) in the present work support the assignments of the Y(4140) and Y(4080) as the χ _{c1}(3P) and χ _{c0}(3P) states, respectively. In addition, the χ _{c2}(3P) state is predicted to be a very narrow state. The results in the present work could be tested by further experiments in the LHCb and forthcoming Belle II.

Hyperfine quenching of the 2s2 2p5 3 s3P2 state of Ne-like ions

NASA Astrophysics Data System (ADS)

Safronova, U. I.; Stafford, A.; Safronova, A. S.

2017-04-01

The many-body perturbation theory (RMBPT) is used to calculate energies and multipole matrix elements to evaluate hyperfine quenching of the 2s2 2p5 3 s 3P2 state in Ne-like ions. In particular, the 3P2 excited state decays to the 1S0 ground state by M2 emission, while both 1P1 and 3P1 states decay to the ground-state by E1 emission, which is substantially faster. For odd-A nuclei, the hyperfine interaction induces admixtures of 3P1 and 1P1 states into the 3P2 state, resulting in an increase of the 3P2 transition rate and a corresponding reduction of the 3P2 lifetime. We consider 22 Ne like ions with Z = 14 - 94 and nuclear moment I =1/2. We found that the largess hyperfine quenching contribution by a factor of 2 are for Ne-like 31P and 203Tl. The smallest (less than 1%) induced contribution are the following Ne-like ions: 57Fe, 107Ag, 109Ag, 183W, and 187Os ions. For another 15 Ne-like ions the hyperfine quenching contribution is between 15% and 35%. Applications to x-ray line polarization of Ne-like lines is considered. This work is supported by the Department of Energy, National Nuclear Security Administration, under Award Number DE-NA0002954.

The use of MP-AES for determination of plant available P in soil by DL method and distribution of soils into P status classes by DL, AL and Mehlich 3 methods.

NASA Astrophysics Data System (ADS)

Toomsoo, Avo; Jürgens, Meit; Kõlli, Raimo; Künnapas, Allan; Albre, Imbi; Tõnutare, Tõnu; Rodima, Ako

2017-04-01

Only small percentage of soil total phosphorus is easily exchangeable between solid and solution phase. Plants are able to assimilate P from environment only in the form of orthophosphate ions (H2PO4- and HPO42-) from soil solution. Deficit of P in soil solution prevents plant normal growth and decreases yield quantity and quality. The excess of P in soil solution causes the pollution of environment and eutrophication of water bodies. Therefore it is important to give to the plant producers the correct fertilization recommendations. Lot of analytical methods are developed for the determination of plant available P in soils. In the Baltic Sea region seven different soils' P analysis methods in use. Each method has its own gradation and often there is more than one gradation for the same method depending from agroecological conditions. For agricultural soils in Estonia there are soil P status gradations according to Mehlich 3, DL and AL methods. Phosphate content in soil can be determined by molybdate method Vis-spectrometrically. Very often for analysis of soils' P content also ICP-OES, ICP-MS and also MP-AES instrumental methods are used The aim of our work was to investigate the possibility of using MP-AES for determination of plant available P in soil by DL method and also to compare how the analysed soils are distributed to M3, AL and DL fertilizer requirement groups according to the P content.

Modified g-C3N4/TiO2 nanosheets/ZnO ternary facet coupled heterojunction for photocatalytic degradation of p-toluenesulfonic acid (p-TSA) under visible light

NASA Astrophysics Data System (ADS)

Jiang, Dong; Yu, Han; Yu, Hongbing

2017-01-01

Novel ternary nanocomposites with facet coupled structure were synthesized by using modified g-C3N4, TiO2 nanosheets and nano-ZnO. Nanosheet/nanosheet heterojunction structure was investigated by TEM, XPS and XRD. FT-IR and Nitrogen adsorption were illustrated for chemical/physical structure analyses. Solution of p-Toluenesulfonic acid (p-TSA) was chosen as target pollutant for visible light photodegradation and the excellent removal efficiency was achieved by this structurally modified g-C3N4/TiO2/ZnO hybrid. The visible light absorption improvement and quantum efficiency enhancement, which were testified by UV-vis DRS, PL and p-TSA photodegradation measurements, due to the facet coupled structure and appropriate quantity of modified g-C3N4 in the nanocomposites.

Characterization and Mechanical Properties of 2014 Aluminum Alloy Reinforced with Al2O3p Composite Produced by Two-Stage Stir Casting Route

NASA Astrophysics Data System (ADS)

Bharath, V.; Ajawan, Santhrusht S.; Nagaral, Madev; Auradi, Virupaxi; Kori, Shivaputrappa Amarappa

2018-02-01

Metal matrix composites (MMC's) form appropriate choice of materials where there is a demand for stiffness, strength combined with low weight for different applications. The applications of Aluminum based MMC's as engineering materials has been exceedingly increased in almost all industrial sectors. Aluminum strengthened with Al2O3p gives excellent physical and mechanical properties like high hardness, low density, high electrical conductivity etc., which are generally used in the field of aerospace, automobile and industrial applications. In present work, an attempt is being made to integrate 2014 Al alloy with Al2O3p by two stage stir casting with addition level of reinforcement maintained at 9 and 12 wt%. Microstructural characterization carried out using scanning electron microscopy showed fairly uniform distribution of Al2O3p with grain refinement of the matrix. These prepared composites are mechanically characterized as per the ASTM standards using computerized universal testing machine. Improvements in tensile strength, density and hardness of the prepared composites were observed with increase in the reinforcement wt%. Percentage improvements of 5.09% (9 wt%), 17.65% (12 wt%) in terms of tensile strength and 29.18% (9 wt%), 43.69% (12 wt%) in terms of hardness were obtained respectively.

Pincer phosphine complexes of ruthenium: formation of Ru(P-O-P)(PPh3)HCl (P-O-P = xantphos, DPEphos, (Ph2PCH2CH2)2O) and Ru(dppf)(PPh3)HCl and characterization of cationic dioxygen, dihydrogen, dinitrogen, and arene coordinated phosphine products.

PubMed

Ledger, Araminta E W; Moreno, Aitor; Ellul, Charles E; Mahon, Mary F; Pregosin, Paul S; Whittlesey, Michael K; Williams, Jonathan M J

2010-08-16

Treatment of Ru(PPh(3))(3)HCl with the pincer phosphines 9,9-dimethyl-4,5-bis(diphenylphosphino)xanthene (xantphos), bis(2-diphenylphosphinophenyl)ether (DPEphos), or (Ph(2)PCH(2)CH(2))(2)O affords Ru(P-O-P)(PPh(3))HCl (xantphos, 1a; DPEphos, 1b; (Ph(2)PCH(2)CH(2))(2)O, 1c). The X-ray crystal structures of 1a-c show that all three P-O-P ligands coordinate in a tridentate manner through phosphorus and oxygen. Abstraction of the chloride ligand from 1a-c by NaBAr(4)(F) (BAr(4)(F) = B(3,5-C(6)H(3)(CF(3))(2))(4)) gives the cationic aqua complexes [Ru(P-O-P)(PPh(3))(H(2)O)H]BAr(4)(F) (3a-c). Removal of chloride from 1a by AgOTf yields Ru(xantphos)(PPh(3))H(OTf) (2a), which reacts with water to form [Ru(xantphos)(PPh(3))(H(2)O)H](OTf). The aqua complexes 3a-b react with O(2) to generate [Ru(xantphos)(PPh(3))(eta(2)-O(2))H]BAr(4)(F) (5a) and [Ru(DPEphos)(PPh(3))(eta(2)-O(2))H]BAr(4)(F) (5b). Addition of H(2) or N(2) to 3a-c yields the thermally unstable dihydrogen and dinitrogen species [Ru(P-O-P)(PPh(3))(eta(2)-H(2))H]BAr(4)(F) (6a-c) and [Ru(P-O-P)(PPh(3))(N(2))H]BAr(4)(F) (7a-c), which have been characterized by multinuclear NMR spectroscopy at low temperature. Ru(PPh(3))(3)HCl reacts with 1,1'-bis(diphenylphosphino)ferrocene (dppf) to give the 16-electron complex Ru(dppf)(PPh(3))HCl (1d), which upon treatment with NaBAr(4)(F), affords [Ru(dppf){(eta(6)-C(6)H(5))PPh(2)}H]BAr(4)(F) (8), in which the PPh(3) ligand binds eta(6) through one of the PPh(3) phenyl rings. Reaction of 8 with CO or PMe(3) at elevated temperatures yields the 18-electron products [Ru(dppf)(PPh(3))(CO)(2)H]BAr(F)(4) (9) and [Ru(PMe(3))(5)H]BAr(4)(F) (10).

Integrating P3 Data Into P2 Analyses: What is the Added Value

Treesearch

James R. Steinman

2001-01-01

The Forest Inventory and Analysis and Forest Health Monitoring Programs of the USDA Forest Service are integrating field procedures for measuring their networks of plots throughout the United States. These plots are now referred to as Phase 2 (P2) and Phase 3 (P3) plots, respectively, and 1 out of every 16 P2 plots will also be a P3 plot. Mensurational methods will be...

Teaching Petri Nets Using P3

ERIC Educational Resources Information Center

Gasevic, Dragan; Devedzic, Vladan

2004-01-01

This paper presents Petri net software tool P3 that is developed for training purposes of the Architecture and organization of computers (AOC) course. The P3 has the following features: graphical modeling interface, interactive simulation by single and parallel (with previous conflict resolution) transition firing, two well-known Petri net…

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

The GRP1 PH domain, like the AKT1 PH domain, possesses a sentry glutamate residue essential for specific targeting to plasma membrane PI(3,4,5)P(3).

PubMed

Pilling, Carissa; Landgraf, Kyle E; Falke, Joseph J

2011-11-15

During the appearance of the signaling lipid PI(3,4,5)P(3), an important subset of pleckstrin homology (PH) domains target signaling proteins to the plasma membrane. To ensure proper pathway regulation, such PI(3,4,5)P(3)-specific PH domains must exclude the more prevalant, constitutive plasma membrane lipid PI(4,5)P(2) and bind the rare PI(3,4,5)P(3) target lipid with sufficiently high affinity. Our previous study of the E17K mutant of the protein kinase B (AKT1) PH domain, together with evidence from Carpten et al. [Carpten, J. D., et al. (2007) Nature 448, 439-444], revealed that the native AKT1 E17 residue serves as a sentry glutamate that excludes PI(4,5)P(2), thereby playing an essential role in specific PI(3,4,5)P(3) targeting [Landgraf, K. E., et al. (2008) Biochemistry 47, 12260-12269]. The sentry glutamate hypothesis proposes that an analogous sentry glutamate residue is a widespread feature of PI(3,4,5)P(3)-specific PH domains, and that charge reversal mutation at the sentry glutamate position will yield both increased PI(4,5)P(2) affinity and constitutive plasma membrane targeting. To test this hypothesis, we investigated the E345 residue, a putative sentry glutamate, of the general receptor for phosphoinositides 1 (GRP1) PH domain. The results show that incorporation of the E345K charge reversal mutation into the GRP1 PH domain enhances PI(4,5)P(2) affinity 8-fold and yields constitutive plasma membrane targeting in cells, reminiscent of the effects of the E17K mutation in the AKT1 PH domain. Hydrolysis of plasma membrane PI(4,5)P(2) releases the E345K GRP1 PH domain into the cytoplasm, and the efficiency of this release increases when Arf6 binding is disrupted. Overall, the findings provide strong support for the sentry glutamate hypothesis and suggest that the GRP1 E345K mutation will be linked to changes in cell physiology and human pathologies, as demonstrated for AKT1 E17K [Carpten, J. D., et al. (2007) Nature 448, 439-444; Lindhurst, M. J., et al

Synthesis and characterization study of n-Bi2O3/p-Si heterojunction dependence on thickness

NASA Astrophysics Data System (ADS)

Al-Maiyaly, Bushra K. H.; Hussein, Bushra H.; Salih, Ayad A.; Shaban, Auday H.; Mahdi, Shatha H.; Khudayer, Iman H.

2018-05-01

In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickness on the structural, electrical, surface and optical properties of Bi2O3 thin films was studied. XRD analysis reveals that all the as deposited Bi2O3 films show polycrystalline tetragonal structure, with preferential orientation in the (201) direction, without any change in structure due to increase of film thickness. AFM and SEM images are used to investigate the influences of film thickness on surface properties. The optical measurement were taken for the wave length range (400-1100) nm showed that the nature of the optical transition has been direct allowed with average band gap energies varies in the range of (2.9-2.25) eV with change thickness parameter. The extent and nature of transmittance, absorbance, reflectance and optimized band gap of the material assure to utilize it for photovoltaic applications. Hall measurements showed that all the films are n-type. The electrical properties of n-Bi2O3/p-Si heterojunction (HJ) were obtained by I-V (dark and illuminated) and C-V measurement at frequency (10 MHz) at different thickness. The ideality factor saturation current density, depletion width, built-in potential and carrier concentration are characterized under different thickness. The results show these HJ were of abrupt type. The photovoltaic measurements short-circuit current density, open-circuit voltage, fill factor and efficiencies are determined for all samples. Finally thermal oxidation allowed fabrication n-Bi2O3/p-Si heterojunction with different thickness for solar cell application.

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

NASA Astrophysics Data System (ADS)

McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

2016-10-01

The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 < x < 0.17) layers. SPV measurements reveal significant deviation from previous SPV studies on p-GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

Interaction of Phospholipase A/Acyltransferase-3 with Pex19p

PubMed Central

Uyama, Toru; Kawai, Katsuhisa; Kono, Nozomu; Watanabe, Masahiro; Tsuboi, Kazuhito; Inoue, Tomohito; Araki, Nobukazu; Arai, Hiroyuki; Ueda, Natsuo

2015-01-01

Phospholipase A/acyltransferase (PLA/AT)-3 (also known as H-rev107 or AdPLA) was originally isolated as a tumor suppressor and was later shown to have phospholipase A1/A2 activity. We have also found that the overexpression of PLA/AT-3 in mammalian cells results in specific disappearance of peroxisomes. However, its molecular mechanism remained unclear. In the present study, we first established a HEK293 cell line, which stably expresses a fluorescent peroxisome marker protein (DsRed2-Peroxi) and expresses PLA/AT-3 in a tetracycline-dependent manner. The treatment with tetracycline, as expected, caused disappearance of peroxisomes within 24 h, as revealed by diffuse signals of DsRed2-Peroxi and a remarkable decrease in a peroxisomal membrane protein, PMP70. A time-dependent decrease in ether-type lipid levels was also seen. Because the activation of LC3, a marker of autophagy, was not observed, the involvement of autophagy was unlikely. Among various peroxins responsible for peroxisome biogenesis, Pex19p functions as a chaperone protein for the transportation of peroxisomal membrane proteins. Immunoprecipitation analysis showed that PLA/AT-3 binds to Pex19p through its N-terminal proline-rich and C-terminal hydrophobic domains. The protein level and enzyme activity of PLA/AT-3 were increased by its coexpression with Pex19p. Moreover, PLA/AT-3 inhibited the binding of Pex19 to peroxisomal membrane proteins, such as Pex3p and Pex11βp. A catalytically inactive point mutant of PLA/AT-3 could bind to Pex19p but did not inhibit the chaperone activity of Pex19p. Altogether, these results suggest a novel regulatory mechanism for peroxisome biogenesis through the interaction between Pex19p and PLA/AT-3. PMID:26018079

pH regulation in anoxic rice coleoptiles at pH 3.5: biochemical pHstats and net H+ influx in the absence and presence of NO3−

PubMed Central

Greenway, Hank; Kulichikhin, Konstantin Y.; Cawthray, Gregory R.; Colmer, Timothy D.

2012-01-01

During anoxia, cytoplasmic pH regulation is crucial. Mechanisms of pH regulation were studied in the coleoptile of rice exposed to anoxia and pH 3.5, resulting in H+ influx. Germinating rice seedlings survived a combination of anoxia and exposure to pH 3.5 for at least 4 d, although development was retarded and net K+ efflux was continuous. Further experiments used excised coleoptile tips (7–10 mm) in anoxia at pH 6.5 or 3.5, either without or with 0.2 mM NO3−, which distinguished two processes involved in pH regulation. Net H+ influx (μmol g−1 fresh weight h−1) for coleoptiles with NO3− was ∼1.55 over the first 24 h, being about twice that in the absence of NO3−, but then decreased to 0.5–0.9 as net NO3− uptake declined from ∼1.3 to 0.5, indicating reduced uptake via H+–NO3− symports. NO3− reduction presumably functioned as a biochemical pHstat. A second biochemical pHstat consisted of malate and succinate, and their concentrations decreased substantially with time after exposure to pH 3.5. In anoxic coleoptiles, K+ balancing the organic anions was effluxed to the medium as organic anions declined, and this efflux rate was independent of NO3− supply. Thus, biochemical pHstats and reduced net H+ influx across the plasma membrane are important features contributing to pH regulation in anoxia-tolerant rice coleoptiles at pH 3.5. PMID:22174442

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Genetics of digalactoside-binding adhesin from a uropathogenic Escherichia coli strain.

PubMed Central

Normark, S; Lark, D; Hull, R; Norgren, M; Båga, M; O'Hanley, P; Schoolnik, G; Falkow, S

1983-01-01

The uropathogenic strain Escherichia coli J96 mediates mannose-resistant hemagglutination owing to production of a digalactoside-binding adhesin. A cosmid clone from this strain has been isolated that, when harbored in E. coli K-12, expressed Pap pili and this adhesin (R. Hull et al., Infect. Immun. 33:933-938, 1981). By transposon mutagenesis and by the construction of a number of hybrid plasmid derivatives, we have demonstrated that about 8.5 kilobases of DNA is required to generate a mannose-resistant hemagglutination-positive phenotype in E. coli K-12 strain P678-54. The structural gene for the Pap pili monomer, papA, has been identified and mapped close to the promotor-proximal end of the Pap operon. Although strain P678-54 that harbored a Tn5 insertion within papA showed a mannose-resistant hemagglutination-positive phenotype, it was negative in a competitive enzyme-linked immunosorbent assay with anti-Pap pilus serum. This could mean that a Pap adhesin is encoded by a region on the Pap operon that is distinct from papA. Images PMID:6136465

The Putative Exchange Factor Gef3p Interacts with Rho3p GTPase and the Septin Ring during Cytokinesis in Fission Yeast*

PubMed Central

Muñoz, Sofía; Manjón, Elvira; Sánchez, Yolanda

2014-01-01

The small GTP-binding proteins of the Rho family and its regulatory proteins play a central role in cytokinetic actomyosin ring assembly and cytokinesis. Here we show that the fission yeast guanine nucleotide exchange factor Gef3p interacts with Rho3p at the division site. Gef3p contains a putative DH homology domain and a BAR/IMD-like domain. The protein localized to the division site late in mitosis, where it formed a ring that did not constrict with actomyosin ring (cytokinetic actomyosin ring) invagination; instead, it split into a double ring that resembled the septin ring. Gef3p co-localized with septins and Mid2p and required septins and Mid2p for its localization. Gef3p interacts physically with the GTP-bound form of Rho3p. Although Gef3p is not essential for cell separation, the simultaneous disruption of gef3+ and Rho3p-interacting proteins, such as Sec8p, an exocyst component, Apm1p, a subunit of the clathrin adaptor complex or For3p, an actin-polymerizing protein, yielded cells with strong defects in septation and polarity respectively. Our results suggest that interactions between septins and Rho-GEFs provide a new targeting mechanism for GTPases in cytokinesis, in this case probably contributing to Rho3p function in vesicle tethering and vesicle trafficking in the later steps of cell separation. PMID:24947517

Spin Polarization of Rb and Cs n p P2 3/2 (n =5 , 6) Atoms by Circularly Polarized Photoexcitation of a Transient Diatomic Molecule

NASA Astrophysics Data System (ADS)

Mironov, A. E.; Hewitt, J. D.; Eden, J. G.

2017-03-01

We report the selective population of Rb or Cs n p P2 3/2 (n =5 , 6; F =4 , 5) hyperfine states by the photodissociation of a transient, alkali-rare gas diatomic molecule. Circularly polarized (σ-), amplified spontaneous emission (ASE) on the D2 line of Rb or Cs (780.0 and 852.1 nm, respectively) is generated when Rb-Xe or Cs-Xe ground state collision pairs are photoexcited by a σ+-polarized optical field having a wavelength within the D2 blue satellite continuum, associated with the B Σ2 1/2 +←X Σ2 1/2 + (free←free ) transition of the diatomic molecule. The degree of spin polarization of Cs (6 p P3/2 2 ), specifically, is found to be dependent on the interatomic distance (R ) at which the excited complex is born, a result attributed to the structure of the B Σ2 1/2 + state. For Cs-Xe atomic pairs, tuning the wavelength of the optical field from 843 to 848 nm varies the degree of circular polarization of the ASE from 63% to almost unity because of the perturbation, in the 5 ≤R ≤6 Å interval, of the Σ2 1/2 + potential by a d σ molecular orbital associated with a higher Λ 2 electronic state. Monitoring only the Cs 6 p P3/2 2 spin polarization reveals a previously unobserved interaction of CsXe (B Σ2 1/2 + ) with the lowest vibrational levels of a Λ 2 state derived from Cs (5 d )+Xe . By inserting a molecular intermediate into the alkali atom excitation mechanism, these experiments realize electronic spin polarization through populating no more than two n p P2 3/2 hyperfine states, and demonstrate a sensitive spectroscopic

Interaction between Al3+ and acrylic acid and polyacrylic acid in acidic aqueous solution: a model experiment for the behavior of Al3+ in acidified soil solution.

PubMed

Etou, Mayumi; Masaki, Yuka; Tsuji, Yutaka; Saito, Tomoyuki; Bai, Shuqin; Nishida, Ikuko; Okaue, Yoshihiro; Yokoyama, Takushi

2011-01-01

From the viewpoint of the phytotoxicity and mobility of Al(3+) released from soil minerals due to soil acidification, the interaction between Al(3+) and acrylic acid (AA) and polyacrylic acid (PAA) as a model compound of fulvic acid was investigated. The interaction was examined at pH 3 so as to avoid the hydrolysis of Al(3+). The interaction between Al(3+) and AA was weak. However, the interaction between Al(3+) and PAA was strong and depended on the initial (COOH in PAA)/Al molar ratio (R(P)) of the solution. For the range of 1/R(P), the interaction between Al(3+) and PAA can be divided into three categories: (1) 1:1 Al-PAA-complex (an Al(3+) combines to a carboxyl group), (2) intermolecular Al-PAA-complex (an Al(3+) combines to more than 2 carboxyl groups of other Al-PAA-complexes) in addition to the 1:1 Al-PAA-complex and (3) precipitation of intermolecular complexes. In conclusion, R(P) is an important factor affecting the behavior of Al(3+) in acidic soil solution.

First principles calculations of electronic structure and magnetic properties of Cr-based magnetic semiconductors Al{sub 1-x}Cr{sub x}X (X=N, P, As, Sb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saeed, Y., E-mail: yasir_saeed54321@yahoo.co; Shaukat, A., E-mail: schaukat@gmail.co; Nazir, S., E-mail: nazirsafdar@gmail.co

2010-01-15

First principles calculations based on the density functional theory (DFT) within the local spin density approximation are performed to investigate the electronic structure and magnetic properties of Cr-based zinc blende diluted magnetic semiconductors Al{sub 1-x}Cr{sub x}X (X=N, P, As, Sb) for 0<=x<=0.50.The behaviour of magnetic moment of Al{sub 1-x}Cr{sub x}X at each Cr site as well as the change in the band gap value due to spin down electrons has been studied by increasing the concentration of Cr atom and through changing X from N to Sb. Furthermore, the role of p-d hybridization is analyzed in the electronic band structuremore » and exchange splitting of d-dominated bands. The interaction strength is stronger in Al{sub 1-x}Cr{sub x}N and becomes weaker in Al{sub 1-x}Cr{sub x}Sb. The band gap due to the spin down electrons decreases with the increased concentration of Cr in Al{sub 1-x}Cr{sub x}X, and as one moves down along the isoelectronic series in the group V from N to Sb. Our calculations also verify the half-metallic ferromagnetic character in Cr doped AlX. - Graphical abstract: The prototype structures of Cr doped AlX (X=N, P, As, Sb) compounds: (A) zinc blende AlP for x=0, (B) Cr{sub 1}Al{sub 7}P{sub 8} for x=0.125, (C) Cr{sub 1}Al{sub 3}P{sub 4} for x=0.25, (D) Cr{sub 1}Al{sub 1}P{sub 2} for x=0.5.« less

Comparison of the extraction and determination of serum exosome and miRNA in serum and the detection of miR-27a-3p in serum exosome of ALS patients.

PubMed

Xu, Qian; Zhao, Yuying; Zhou, Xiaoyan; Luan, Jing; Cui, Yazhou; Han, Jinxiang

2018-02-01

Amyotrophic Lateral Sclerosis (ALS) is a muscle-bone degenerative disease, which lacks a specific index for diagnosis. In our previous studies, we found that exosomes mediated the interaction mechanism between muscle and bone at the cellular level, and myoblast exosomes can transfer miR-27a-3p to promote osteoblast mineralization. Therefore, we suppose that the expression of miR-27a-3p in the serum exosomes of ALS patients also changes. In this study, we used healthy human serum as a sample to find out the conditions and methods for extraction and detection. Then through comparison of the expression of miR-27a-3p in the serum exosomes of 10 ALS patients and healthy subjects, we found that in the ALS patients miR-27a-3p was down-regulated, and may be involved in the development of ALS, and therefore has potential as a reference for the diagnosis of ALS in the clinic.

Catalytic Silylation of N2 and Synthesis of NH3 and N2H4 by Net Hydrogen Atom Transfer Reactions Using a Chromium P4 Macrocycle.

PubMed

Kendall, Alexander J; Johnson, Samantha I; Bullock, R Morris; Mock, Michael T

2018-02-21

We report the first discrete molecular Cr-based catalysts for the reduction of N 2 . This study is focused on the reactivity of the Cr-N 2 complex, trans-[Cr(N 2 ) 2 (P Ph 4 N Bn 4 )] (P 4 Cr(N 2 ) 2 ), bearing a 16-membered tetraphosphine macrocycle. The architecture of the [16]-P Ph 4 N Bn 4 ligand is critical to preserve the structural integrity of the catalyst. P 4 Cr(N 2 ) 2 was found to mediate the reduction of N 2 at room temperature and 1 atm pressure by three complementary reaction pathways: (1) Cr-catalyzed reduction of N 2 to N(SiMe 3 ) 3 by Na and Me 3 SiCl, affording up to 34 equiv N(SiMe 3 ) 3 ; (2) stoichiometric reduction of N 2 by protons and electrons (for example, the reaction of cobaltocene and collidinium triflate at room temperature afforded 1.9 equiv of NH 3 , or at -78 °C afforded a mixture of NH 3 and N 2 H 4 ); and (3) the first example of NH 3 formation from the reaction of a terminally bound N 2 ligand with a traditional H atom source, TEMPOH (2,2,6,6-tetramethylpiperidine-1-ol). We found that trans-[Cr( 15 N 2 ) 2 (P Ph 4 N Bn 4 )] reacts with excess TEMPOH to afford 1.4 equiv of 15 NH 3 . Isotopic labeling studies using TEMPOD afforded ND 3 as the product of N 2 reduction, confirming that the H atoms are provided by TEMPOH.

Improving p-type doping efficiency in Al{sub 0.83}Ga{sub 0.17}N alloy substituted by nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice with Mg{sub Ga}-O{sub N} δ-codoping: Role of O-atom in GaN monolayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Hong-xia; Shi, Jun-jie, E-mail: jjshi@pku.edu.cn; Jiang, Xin-he

2015-01-15

We calculate Mg-acceptor activation energy E{sub A} and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on E{sub A} in nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice (SL), a substitution for Al{sub 0.83}Ga{sub 0.17}N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMg{sub Ga}-O{sub N} (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing E{sub A}. The shorter the Mg-O bond is, the smaller the E{sub A} is. The Mg-acceptor activation energy can be reduced significantly by nMg{sub Ga}-O{submore » N} δ-codoping. Our calculated E{sub A} for 2Mg{sub Ga}-O{sub N} is 0.21 eV, and can be further reduced to 0.13 eV for 3Mg{sub Ga}-O{sub N}, which results in a high hole concentration in the order of 10{sup 20} cm{sup −3} at room temperature in (AlN){sub 5}/(GaN){sub 1} SL. Our results prove that nMg{sub Ga}-O{sub N} (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.« less

Terahertz characterization of Y2O3-added AlN ceramics

NASA Astrophysics Data System (ADS)

Kang, Seung Beom; Chung, Dong Chul; Kim, Sung-Jin; Chung, Jun-Ki; Park, Sang-Yeup; Kim, Ki-Chul; Kwak, Min Hwan

2016-12-01

Terahertz optical and dielectric properties of AlN ceramics fabricated by hot pressed sintering are investigated by THz time-domain spectroscopy in the frequency range of 0.2-3.5 THz. The measured properties of the pure AlN ceramic are compared with those of Y2O3-added AlN ceramic. Two prominent resonance modes, which are essentially responsible for the dielectric properties of the Y2O3-added AlN in terahertz regime, are characterized at ωTO1/(2π) = 2.76 THz (92 cm-1) and ωTO2/(2π) = 18.2 THz (605 cm-1) and are well described by the pseudo-harmonic oscillator model through theoretical fitting. The resonance ωTO1 at 2.76 THz is proposed to be due to the formation of a YAG (Y3Al5O12) secondary phase in Y2O3-added AlN ceramic. From the experimental results, good correlation is observed between the prominent peak of YAG secondary phase at 2.76 THz and thermal conductivity. Additionally, there is a high correlation between densification and refractive index of AlN ceramics fabricated by hot pressed sintering.

Hydrodeoxygenation of p -Cresol over Pt/Al 2 O 3 Catalyst Promoted by ZrO 2 , CeO 2 , and CeO 2 –ZrO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Weiyan; Wu, Kui; Liu, Pengli

2016-07-20

ZrO 2-Al 2O 3 and CeO 2-Al 2O 3 were prepared by a co-precipitation method and selected as supports for Pt catalysts. The effects of CeO 2 and ZrO 2 on the surface area and Brønsted acidity of Pt/Al 2O 3 were studied. In the hydrodeoxygenation (HDO) of p-cresol, the addition of ZrO 2 promoted the direct deoxygenation activity on Pt/ZrOO 2-Al 2O 3 via Caromatic-O bond scission without benzene ring saturation. Pt/CeOO 2-Al 2O 3 exhibited higher deoxygenation extent than Pt/Al 2O 3 due to the fact that Brønsted acid sites on the catalyst surface favored the adsorption ofmore » p-cresol. With the advantages of CeO 2 and ZrO 2 taken into consideration, CeO 2-ZrOO 2-Al 2O 3 was prepared, leading to the highest HDO activity of Pt/CeO 2-ZrOO 2-Al 2O 3. The deoxygenation extent for Pt/CeO 2-ZrOO 2-Al 2O 3 was 48.4% and 14.5% higher than that for Pt/ZrO2O 2-Al 2O 3 and Pt/CeOO 2-Al 2O 3, respectively.« less

Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

NASA Astrophysics Data System (ADS)

Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

2018-03-01

SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm-3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V-1 s-1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm-1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V-1 s-1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

N- and C-terminal substance P fragments: differential effects on striatal [3H]substance P binding and NK1 receptor internalization.

PubMed

Michael-Titus, A T; Blackburn, D; Connolly, Y; Priestley, J V; Whelpton, R

1999-07-13

N- and C-terminal substance P (SP) fragments increase striatal dopamine outflow at nanomolar concentrations. This contrasts with their low affinity for NK1 receptors. To explore this discrepancy, we investigated the interaction of SP and SP fragments with NK1 sites in fresh striatal slices, the same model used in the functional studies on dopamine outflow. [3H]SP bound specifically to one site (Kd = 6.6 +/- 0.9 nM; Bmax = 12.6 +/- 0.7 fmol/mg protein). [3H]SP binding was displaced by SP (IC50 = 11.8 nM), but not by SP(1-7) or SP(5-11), up to 10 microM. In contrast, 10 nM SP(1-7) or SP(5-11) induced significant internalization of the NK1 receptor, similar to that induced by SP. We suggest that SP fragments have high affinity for an NK1 receptor conformer which is different from that labelled by [3H]SP.

Quantitative and Qualitative Involvement of P3N-PIPO in Overcoming Recessive Resistance against Clover Yellow Vein Virus in Pea Carrying the cyv1 Gene

PubMed Central

Choi, Sun Hee; Hagiwara-Komoda, Yuka; Atsumi, Go; Shimada, Ryoko; Hisa, Yusuke; Naito, Satoshi

2013-01-01

In pea carrying cyv1, a recessive gene for resistance to Clover yellow vein virus (ClYVV), ClYVV isolate Cl-no30 was restricted to the initially infected cells, whereas isolate 90-1 Br2 overcame this resistance. We mapped the region responsible for breaking of cyv1-mediated resistance by examining infection of cyv1 pea with chimeric viruses constructed from parts of Cl-no30 and 90-1 Br2. The breaking of resistance was attributed to the P3 cistron, which is known to produce two proteins: P3, from the main open reading frame (ORF), and P3N-PIPO, which has the N-terminal part of P3 fused to amino acids encoded by a small open reading frame (ORF) called PIPO in the +2 reading frame. We introduced point mutations that were synonymous with respect to the P3 protein but nonsynonymous with respect to the P3N-PIPO protein, and vice versa, into the chimeric viruses. Infection of plants with these mutant viruses revealed that both P3 and P3N-PIPO were involved in overcoming cyv1-mediated resistance. Moreover, P3N-PIPO quantitatively affected the virulence of Cl-no30 in cyv1 pea. Additional expression in trans of the P3N-PIPO derived from Cl-no30, using White clover mosaic virus as a vector, enabled Cl-no30 to move to systemic leaves in cyv1 pea. Susceptible pea plants infected with chimeric ClYVV possessing the P3 cistron of 90-1 Br2, and which were therefore virulent toward cyv1 pea, accumulated more P3N-PIPO than did those infected with Cl-no30, suggesting that the higher level of P3N-PIPO in infected cells contributed to the breaking of resistance by 90-1 Br2. This is the first report showing that P3N-PIPO is a virulence determinant in plants resistant to a potyvirus. PMID:23616656

High resolution chromosome 3p, 8p, 9q and 22q allelotyping analysis in the pathogenesis of gallbladder carcinoma

PubMed Central

Wistuba, I I; Maitra, A; Carrasco, R; Tang, M; Troncoso, P; Minna, J D; Gazdar, A F

2002-01-01

Our recent genome-wide allelotyping analysis of gallbladder carcinoma identified 3p, 8p, 9q and 22q as chromosomal regions with frequent loss of heterozygosity. The present study was undertaken to more precisely identify the presence and location of regions of frequent allele loss involving those chromosomes in gallbladder carcinoma. Microdissected tissue from 24 gallbladder carcinoma were analysed for PCR-based loss of heterozygosity using 81 microsatellite markers spanning chromosome 3p (n=26), 8p (n=14), 9q (n=29) and 22q (n=12) regions. We also studied the role of those allele losses in gallbladder carcinoma pathogenesis by examining 45 microdissected normal and dysplastic gallbladder epithelia accompanying gallbladder carcinoma, using 17 microsatellite markers. Overall frequencies of loss of heterozygosity at 3p (100%), 8p (100%), 9q (88%), and 22q (92%) sites were very high in gallbladder carcinoma, and we identified 13 distinct regions undergoing frequent loss of heterozygosity in tumours. Allele losses were frequently detected in normal and dysplastic gallbladder epithelia. There was a progressive increase of the overall loss of heterozygosity frequency with increasing severity of histopathological changes. Allele losses were not random and followed a sequence. This study refines several distinct chromosome 3p, 8p, 9q and 22q regions undergoing frequent allele loss in gallbladder carcinoma that will aid in the positional identification of tumour suppressor genes involved in gallbladder carcinoma pathogenesis. British Journal of Cancer (2002) 87, 432–440. doi:10.1038/sj.bjc.6600490 www.bjcancer.com © 2002 Cancer Research UK PMID:12177780

Calculation of Excitation Function of Some Structural Fusion Material for (n, p) Reactions up to 25 MeV

NASA Astrophysics Data System (ADS)

Reshid, Tarik S.

2013-04-01

Fusion serves an inexhaustible energy for humankind. Although there have been significant research and development studies on the inertial and magnetic fusion reactor technology, Furthermore, there are not radioactive nuclear waste problems in the fusion reactors. In this study, (n, p) reactions for some structural fusion materials such as 27Al, 51V, 52Cr, 55Mn and 56Fe have been investigated. The new calculations on the excitation functions of 27 Al(n, p) 27 Mg, 51 V(n, p) 51 Ti, 52 Cr(n, p) 52 V, 55 Mn(n, p) 55 Cr and 56 Fe(n, p) 56 Mn reactions have been carried out up to 30 MeV incident neutron energy. Statistical model calculations, based on the Hauser-Feshbach formalism, have been carried out using the TALYS-1.0 and were compared with available experimental data in the literature and with ENDF/B-VII, T = 300 K; JENDL-3.3, T = 300 K and JEFF-3.1, T = 300 K evaluated libraries.

Calculations of resonances parameters for the ((2s2) 1Se, (2s2p) 1,3P0) and ((3s2) 1Se, (3s3p) 1,3P0) doubly excited states of helium-like ions with Z≤10 using a complex rotation method implemented in Scilab

NASA Astrophysics Data System (ADS)

Gning, Youssou; Sow, Malick; Traoré, Alassane; Dieng, Matabara; Diakhate, Babacar; Biaye, Mamadi; Wagué, Ahmadou

2015-01-01

In the present work a special computational program Scilab (Scientific Laboratory) in the complex rotation method has been used to calculate resonance parameters of ((2s2) 1Se, (2s2p) 1,3P0) and ((3s2) 1Se, (3s3p) 1,3P0) states of helium-like ions with Z≤10. The purpose of this study required a mathematical development of the Hamiltonian applied to Hylleraas wave function for intrashell states, leading to analytical expressions which are carried out under Scilab computational program. Results are in compliance with recent theoretical calculations.

Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Suen, Nian-Tzu; College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002

15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows themore » octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.« less

Application of Al2O3:C+fibre dosimeters for 290 MeV/n carbon therapeustic beam dosimetry.

NASA Astrophysics Data System (ADS)

Nascimento, L. F.; Vanhavere, F.; Kodaira, S.; Kitamura, H.; Verellen, D.; De Deene, Y.

2015-10-01

The capability of radioluminescence (RL) dosimeters composed of carbon-doped aluminium oxide (Al2O3:C) detectors+optical fibre has been verified for absorbed dose-rate measurements during carbon radiotherapy. The RL signals from two separate Al2O3:C detectors (single crystal 'CG' and droplet 'P1') have been systematically measured and compared along the Bragg-curve and Spread-Out Bragg-Peak of 290 MeV/n carbon beams in the water. The absorbed dose response was assessed for the range of 0.5-10 Gy. For doses up to 6 Gy, we observed a linear response for both types of detectors, while for higher doses CG presented a more prominent supraliearity than P1. The RL response for low-LET protons in the entrance from the curve was found to closely resemble that observed for a clinical 6 MV X-ray beam, while it was found that P1 has a better agreement with the reference data from standard ionization chamber than CG. We observed a significant decrease in luminescence efficiency with LET in the Bragg peak region. The Al2O3:C RL luminescence efficiency differs from Al2O3:C OSL results, which implies that the signal can be corrected for LET dependency to match the correct SOBP and Bragg Peak.

The adsorption of Run (n = 1-4) on γ-Al2O3 Surface: A DFT study

NASA Astrophysics Data System (ADS)

Liu, Zhe; Guo, Yafei; Chen, Yu; Shen, Rong

2018-05-01

The density functional theory (DFT) was adopted to study the adsorption and growth of Run (n = 1-4) clusters on γ-Al2O3 surface, which is of great significances for the design of many important catalysts, especially for carbon dioxide methanation. It is found that both the Rusbnd Ru bond length and adsorption energy Eads of Ru clusters with the surface increase with the Run clusters increasing. The growth ability of the supported Run cluster is weaker than the gas phase Run clusters through comparing their respective growth process, which ascribes to the stabilization of γ-Al2O3 support. An interesting discovery is that the basin structure was supposed to be the most favorable adsorption geometry for Run clusters. Additionally, the distances between Ru atoms in the adsorbed clusters are longer than that in their isolated counterparts. Bader charge analysis was conducted for the most stable configurations of Run (n = 1-4) clusters on γ-Al2O3 surface as well. And the results suggest that Run (n = 1-4) clusters serve as the electron donators. The result of projected density of states (PDOS) shows that strong adsorption of Ru atom on the γ-Al2O3 surface correlates with strong interaction between d orbital of Ru atom and p orbital of Al or O atom of the Al2O3 support.

High-resolution spectrum of the second member in the ( πu3 p) 4 ( πg3 p) ( πunp) Rydberg series of 32S 2

NASA Astrophysics Data System (ADS)

Ramanamma Chaudhri, Y. V.; Mahajan, C. G.

1991-02-01

High-resolution spectra of S 2 in the region of the E and F- X progressions have been used to carry out the rotational analyses of the bands at 65 869, 66 666, 65 978, 66 380, and 67 094 cm -1. The first two bands form a single progression and have been attributed to the transition E1 u( {1}/{2}, {1}/{2}) ← X0 g+. The bands at 65 978 and 66 380 cm -1 are shown to belong to the electronic transitions E'0 u+( {1}/{2}, {1}/{2}) ← X0 g+ and F1 u( {3}/{2}, {1}/{2}) ← X0 g+, respectively. The group of states E, E', and F constitutes the second member ( n = 5) of the Rydberg series ( πu3 p) 4 ( πu3 p) ( πunp) whose first member ( n = 4) is the state 3Σ u-. The band at 67 094 cm -1 has been assigned to the transition D'1 u ← X0 g+ which, when considered in the light of the state D3Π u, seems to form a second member of the Rydberg series ( πu3 p) 4 ( πg3 p) ( σunp). The vibrational and rotational constants of these electronic states have also been derived.

Crystal structure of Cr-bearing Mg3BeAl8O16, a new polytype of magnesiotaaffeite-2N'2S.

PubMed

Malcherek, Thomas; Schlüter, Jochen

2016-07-01

The crystal structure of a new polytype of magnesiotaaffeite-2N'2S, ideally Mg3BeAl8O16 (trimagnesium beryllium octa-aluminium hexa-deca-oxide), is described in space-group symmetry P-3m1. It has been identified in a fragment of a mineral sample from Burma (Myanmar). The new polytype is composed of two Mg2Al4O8 (S)- and two BeMgAl4O8 (N')-modules in a stacking sequence N'SSN'' which differs from the N'SN'S-stacking sequence of the known magnesiotaaffeite-2N'2S polytype. The crystal structure can be derived from a close-packed arrangement of O atoms and is discussed with regard to its polytypism and its Cr(3+) chromophore content.

Diagnostic value of progesterone receptor, p16, p53 and pHH3 expression in uterine atypical leiomyoma.

PubMed

Liang, Yun; Zhang, Xiaofei; Chen, Xiaoduan; Lü, Weiguo

2015-01-01

The differential diagnosis between atypical leiomyoma and leiomyosarcoma may be hard based on morphological criterion at times. It would be helpful to find out biomarkers that can be used to distinguish them. The aim of the study was to investigate the diagnostic value of progesterone receptor (PR), p16, p53 and pHH3 expression in a series of uterine smooth muscle tumors. Immunohistochemical expression of PR, p16, p53 and pHH3 was investigated on 32 atypical leiomyomas, 15 leiomyosarcomas and 15 usual leomyomas. The difference in expression was compared between atypical leiomyoma and other groups. The expression of PR, p16, and pHH3 was found significantly different between atypical leiomyomas and leiomyosarcomas, but lack of significant difference between atypical leiomyomas and usual leiomyomas. There was no significant difference with regard to p53 distribution among these uterine smooth muscle tumors. High p16, pHH3 expression and low PR expression preferred the diagnosis of leiomyosarcoma. The panel of antibodies used in this study is a useful complementary analysis in the assessment of problematic uterine smooth muscle tumors.

Diagnostic value of progesterone receptor, p16, p53 and pHH3 expression in uterine atypical leiomyoma

PubMed Central

Liang, Yun; Zhang, Xiaofei; Chen, Xiaoduan; Lü, Weiguo

2015-01-01

The differential diagnosis between atypical leiomyoma and leiomyosarcoma may be hard based on morphological criterion at times. It would be helpful to find out biomarkers that can be used to distinguish them. The aim of the study was to investigate the diagnostic value of progesterone receptor (PR), p16, p53 and pHH3 expression in a series of uterine smooth muscle tumors. Immunohistochemical expression of PR, p16, p53 and pHH3 was investigated on 32 atypical leiomyomas, 15 leiomyosarcomas and 15 usual leomyomas. The difference in expression was compared between atypical leiomyoma and other groups. The expression of PR, p16, and pHH3 was found significantly different between atypical leiomyomas and leiomyosarcomas, but lack of significant difference between atypical leiomyomas and usual leiomyomas. There was no significant difference with regard to p53 distribution among these uterine smooth muscle tumors. High p16, pHH3 expression and low PR expression preferred the diagnosis of leiomyosarcoma. The panel of antibodies used in this study is a useful complementary analysis in the assessment of problematic uterine smooth muscle tumors. PMID:26261614

Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.

2016-10-15

The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without themore » insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.« less

Molecular modeling of cytochrome P450 3A4

NASA Astrophysics Data System (ADS)

Szklarz, Grazyna D.; Halpert, James R.

1997-05-01

The three-dimensional structure of human cytochrome P450 3A4 was modeled based on crystallographic coordinates of four bacterial P450s: P450 BM-3, P450cam, P450terp, and P450eryF. The P450 3A4 sequence was aligned to those of the known proteins using a structure-based alignment of P450 BM-3, P450cam, P450terp, and P450eryF. The coordinates of the model were then calculated using a consensus strategy, and the final structure was optimized in the presence of water. The P450 3A4 model resembles P450 BM-3 the most, but the B' helix is similar to that of P450eryF, which leads to an enlarged active site when compared with P450 BM-3, P450cam, and P450terp. The 3A4 residues equivalent to known substrate contact residues of the bacterial proteins and key residues of rat P450 2B1 are located in the active site or the substrate access channel. Docking of progesterone into the P450 3A4 model demonstrated that the substrate bound in a 6β-orientation can interact with a number of active site residues, such as 114, 119, 301, 304, 305, 309, 370, 373, and 479, through hydrophobic interactions. The active site of the enzyme can also accommodate erythromycin, which, in addition to the residues listed for progesterone, also contacts residues 101, 104, 105, 214, 215, 217, 218, 374, and 478. The majority of 3A4 residues which interact with progesterone and/or erythromycin possess their equivalents in key residues of P450 2B enzymes, except for residues 297, 480 and 482, which do not contact either substrate in P450 3A4. The results from docking of progesterone and erythromycin into the enzyme model make it possible to pinpoint residues which may be important for 3A4 function and to target them for site-directed mutagenesis.

Progress in p(+)n InP solar cells fabricated by thermal diffusion

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Weinberg, I.; Fatemi, N. S.; Vargas-Aburto, Carlos; Goradia, C.; Goradia, Manju

1992-01-01

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Real-Space Bonding Indicator Analysis of the Donor-Acceptor Complexes X3BNY3, X3AlNY3, X3BPY3, and X3AlPY3 (X, Y = H, Me, Cl).

PubMed

Mebs, Stefan; Beckmann, Jens

2017-10-12

Calculations of real-space bonding indicators (RSBI) derived from Atoms-In-Molecules (AIM), Electron Localizability Indicator (ELI-D), Non-Covalent Interactions index (NCI), and Density Overlap Regions Indicator (DORI) toolkits for a set of 36 donor-acceptor complexes X 3 BNY 3 (1, 1a-1h), X 3 AlNY 3 (2, 2a-2h), X 3 BPY 3 (3, 3a-3h), and X 3 AlPY 3 (4, 4a-4h) reveal that the donor-acceptor bonds comprise covalent and ionic interactions in varying extents (X = Y = H for 1-4; X = H, Y = Me for 1a-4a; X = H, Y = Cl for 1b-4b; X = Me, Y = H for 1c-4c; X, Y = Me for 1d-4d; X = Me, Y = Cl for 1e-4e; X = Cl, Y = H for 1f-4f; X = Cl, Y = Me for 1g-4g; X, Y = Cl for 1h-4h). The phosphinoboranes X 3 BPY 3 (3, 3a-3h) in general and Cl 3 BPMe 3 (3f) in particular show the largest covalent contributions and the least ionic contributions. The aminoalanes X 3 AlNY 3 (2, 2a-2h) in general and Me 3 AlNCl 3 (2e) in particular show the least covalent contributions and the largest ionic contributions. The aminoboranes X 3 BNY 3 (1, 1a-1h) and the phosphinoalanes X 3 AlPY 3 (4, 4a-4h) are midway between phosphinoboranes and aminoalanes. The degree of covalency and ionicity correlates with the electronegativity difference BP (ΔEN = 0.15) < AlP (ΔEN = 0.58) < BN (ΔEN = 1.00) < AlN (ΔEN = 1.43) and a previously published energy decomposition analysis (EDA). To illustrate the importance of both contributions in Lewis formula representations, two resonance formulas should be given for all compounds, namely, the canonical form with formal charges denoting covalency and the arrow notation pointing from the donor to the acceptor atom to emphasis ionicity. If the Lewis formula mainly serves to show the atomic connectivity, the most significant should be shown. Thus, it is legitimate to present aminoalanes using arrows; however, for phosphinoboranes the canonical form with formal charges is more appropriate.

Thermodynamical and structural insights of orange II adsorption by Mg{sub R}AlNO{sub 3} layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mustapha Bouhent, Mohamed; Laboratoire des Materiaux Inorganiques, UMR CNRS 6002, Universite Blaise Pascal, F-63177 Aubiere Cedex; Derriche, Zoubir, E-mail: derriche_zoubir@yahoo.co

2011-05-15

[Mg{sub 1-x} Al{sub x}(OH){sub 2}][(NO{sub 3}){sub x}, nH{sub 2}O] Layered Double Hydroxide (LDH) sorbents with variable Mg/Al molar (R=(1-x)/x) ratios were investigated for adsorption of azo dye, orange II (OII) at various pH and temperature conditions. Mg{sub 2}AlNO{sub 3} displays the highest adsorption capacity with 3.611 mmol of OII per gram of Mg{sub 2}AlNO{sub 3} at 40 {sup o}C. Adsorption isotherms have been fitted using the Langmuir model and free energy of adsorption ({Delta}G{sup o}), enthalpy ({Delta}H{sup o}) and entropy ({Delta}S{sup o}) were calculated. The experimental values for {Delta}G{sup o} in temperature range between 10 and 40 {sup o}C weremore » found to be negative indicating that a spontaneous process occurred. Positive calculated enthalpy values, characteristic of an endothermic process were found. Characterization of solids (PXRD, FTIR, UV-vis, TGA/DTA, adsorption isotherm BET analysis, SEM and Zetametry) before and after adsorption showed that adsorption proceeds in two steps. First, adsorption occurs at the LDH surface, followed by intercalation via anion exchange. -- Graphical Abstract: Structural and thermodynamical insight of adsorption/Intercalation of OII in Mg{sub R}Al LDH Display Omitted Highlights: {yields} The nitrate containing hydrotalcite-like compounds (Mg{sub R}AlNO{sub 3} LDH) were prepared by the coprecipitation method. {yields} Adsorption of anionic orange dye(OII) is studied on LDHs at different temperatures. {yields} The adsorption process is well described by the Langmuir isotherm model. {yields} Mg{sub 2}AlNO{sub 3} displays the highest adsorption capacity with 3.611 mmol of OII per gram of Mg{sub 2}AlNO{sub 3} at 40 {sup o}C. {yields} Adsorption process does not occur on the surface of the LDH only but an intercalation process is also occurring concomitantly according to the thermodynamical values.« less

Regulation of Cell Diameter, For3p Localization, and Cell Symmetry by Fission Yeast Rho-GAP Rga4p

PubMed Central

Das, Maitreyi; Wiley, David J.; Medina, Saskia; Vincent, Helen A.; Larrea, Michelle; Oriolo, Andrea

2007-01-01

Control of cellular dimensions and cell symmetry are critical for development and differentiation. Here we provide evidence that the putative Rho-GAP Rga4p of Schizosaccharomyces pombe controls cellular dimensions. rga4Δ cells are wider in diameter and shorter in length, whereas Rga4p overexpression leads to reduced diameter of the growing cell tip. Consistent with a negative role in cell growth control, Rga4p protein localizes to the cell sides in a “corset” pattern, and to the nongrowing cell tips. Additionally, rga4Δ cells show an altered growth pattern similar to that observed in mutants of the formin homology protein For3p. Consistent with these observations, Rga4p is required for normal localization of For3p and for normal distribution of the actin cytoskeleton. We show that different domains of the Rga4p protein mediate diverse morphological functions. The C-terminal GAP domain mediates For3p localization to the cell tips and maintains cell diameter. Conversely, overexpression of the N-terminal LIM homology domain of Rga4p promotes actin cable formation in a For3p-dependent manner. Our studies indicate that Rga4p functionally interacts with For3p and has a novel function in the control of cell diameter and cell growth. PMID:17377067

New nighttime retrievals of O(3P) and OH densities in the mesosphere/lower thermosphere using SABER/TIMED observations

NASA Astrophysics Data System (ADS)

Panka, P.; Kutepov, A. A.; Kalogerakis, K. S.; Janches, D.; Feofilov, A.; Rezac, L.; Marsh, D. R.; Yigit, E.

2017-12-01

We present first retrievals of O(3P) and OH densities in the mesosphere/lower thermosphere (MLT) using SABER/TIMED OH 2.0 and 1.6 μm limb emission observations. Recently, Kaufmann et al. [2014] reported that current SABER O(3P) densities are on average 30% higher compared to other observations. In this study we applied new detailed non-LTE model [Panka et al. 2017] of nighttime OH(v), which accounts for the new mechanism OH(v≥5)+O(3P)→O(1D)+OH(v-5) of energy transfer recently suggested by Sharma et al. [2015] and confirmed through laboratory studies by Kalogerakis et al. [2016]. Based on this model we developed a new self-consistent two channel retrieval approach for O(3P) and OH density. Using this approach, we retrieved O(3P) densities that are 10-40% lower than current SABER O(3P), as well as total OH density which is retrieved for the first time using SABER observations. We compare our retrieveals with the results of other observations and models. As it was recently shown by Panka et al. [2017], the new mechanism of OH quenching produces a significant pumping of CO2 4.3 µm emission. We discuss the effects these new O(3P) and OH retrievals have on the nighttime CO2 density retrievals from the SABER 4.3 µm channel.

Determination of the 1s2{\\ell }2{{\\ell }}^{\\prime } state production ratios {{}^{4}P}^{o}/{}^{2}P, {}^{2}D/{}^{2}P and {{}^{2}P}_{+}/{{}^{2}P}_{-} from fast (1{s}^{2},1s2s\\,{}^{3}S) mixed-state He-like ion beams in collisions with H2 targets

NASA Astrophysics Data System (ADS)

Benis, E. P.; Zouros, T. J. M.

2016-12-01

New results are presented on the ratio {R}m={σ }{T2p}( {}4P)/{σ }{T2p}({}2P) concerning the production cross sections of Li-like 1s2s2p quartet and doublet P states formed in energetic ion-atom collisions by single 2p electron transfer to the metastable 1s2s {}3S component of the He-like ion beam. Spin statistics predict a value of R m = 2 independent of the collision system in disagreement with most reported measurements of {R}m≃ 1{--}9. A new experimental approach is presented for the evaluation of R m having some practical advantages over earlier approaches. It also allows for the determination of the separate contributions of ground- and metastable-state beam components to the measured spectra. Applying our technique to zero-degree Auger projectile spectra from 4.5 MeV {{{B}}}3+ (Benis et al 2002 Phys. Rev. A 65 064701) and 25.3 MeV {{{F}}}7+ (Zamkov et al 2002 Phys. Rev. A 65 062706) mixed state (1{s}2 {}1S,1s2s {}3S) He-like ion collisions with H2 targets, we report new values of {R}m=3.5+/- 0.4 for boron and {R}m=1.8+/- 0.3 for fluorine. In addition, the ratios of {}2D/{}2P and {{}2P}+/{{}2P}- populations from either the metastable and/or ground state beam component, also relevant to this analysis, are evaluated and compared to previously reported results for carbon collisions on helium (Strohschein et al 2008 Phys. Rev. A 77 022706) including a critical comparison to theory.

Effects of membrane curvature and pH on proton pumping activity of single cytochrome bo3 enzymes.

PubMed

Li, Mengqiu; Khan, Sanobar; Rong, Honglin; Tuma, Roman; Hatzakis, Nikos S; Jeuken, Lars J C

2017-09-01

The molecular mechanism of proton pumping by heme-copper oxidases (HCO) has intrigued the scientific community since it was first proposed. We have recently reported a novel technology that enables the continuous characterisation of proton transport activity of a HCO and ubiquinol oxidase from Escherichia coli, cytochrome bo 3 , for hundreds of seconds on the single enzyme level (Li et al. J Am Chem Soc 137 (2015) 16055-16063). Here, we have extended these studies by additional experiments and analyses of the proton transfer rate as a function of proteoliposome size and pH at the N- and P-side of single HCOs. Proton transport activity of cytochrome bo 3 was found to decrease with increased curvature of the membrane. Furthermore, proton uptake at the N-side (proton entrance) was insensitive to pH between pH6.4-8.4, while proton release at the P-side had an optimum pH of ~7.4, suggesting that the pH optimum is related to proton release from the proton exit site. Our previous single-enzyme experiments identified rare, long-lived conformation states of cytochrome bo 3 where protons leak back under turn-over conditions. Here, we analyzed and found that ~23% of cytochrome bo 3 proteoliposomes show ΔpH half-lives below 50s after stopping turnover, while only ~5% of the proteoliposomes containing a non-pumping mutant, E286C cytochrome bo 3 exhibit such fast decays. These single-enzyme results confirm our model in which HCO exhibit heterogeneous pumping rates and can adopt rare leak states in which protons are able to rapidly flow back. Copyright © 2017 Elsevier B.V. All rights reserved.

Cytochrome P450 3A4 activity after surgical stress.

PubMed

Haas, Curtis E; Kaufman, David C; Jones, Carolyn E; Burstein, Aaron H; Reiss, William

2003-05-01

To evaluate the relationship between the acute inflammatory response after surgical trauma and changes in hepatic cytochrome P450 3A4 activity, compare changes in cytochrome P450 3A4 activity after procedures with varying degrees of surgical stress, and to explore the time course of any potential drug-cytokine interaction after surgery. Prospective, open-label study with each patient serving as his or her own control. University-affiliated, acute care, general hospital. A total of 16 patients scheduled for elective repair of an abdominal aortic aneurysm (n = 5), complete or partial colectomy (n = 6), or peripheral vascular surgery with graft (n = 5). Cytochrome P450 3A4 activity was estimated using the carbon-14 [14C]erythromycin breath test (ERMBT) before surgery and 24, 48, and 72 hrs after surgery. Abdominal aortic aneurysm and colectomy patients also had an ERMBT performed at discharge. Blood samples were obtained before surgery, immediately after surgery, and 6, 24, 32, 48, and 72 hrs after surgery for determination of plasma concentrations of interleukin-6, interleukin-1beta, and tumor necrosis factor-alpha. Clinical markers of surgical stress that were collected included duration of surgery, estimated blood loss, and volume of fluids administered in the operating room. ERMBT results significantly declined in all three surgical groups, with the lowest value at the time of the 72-hr study in all three groups. There was a trend toward differences in ERMBT results among groups that did not reach statistical significance (p =.06). The nadir ERMBT result was significantly and negatively correlated with both peak interleukin-6 concentration (r(s) = -.541, p =.03) and log interleukin-6 area under the curve from 0 to 72 hrs (r(s) = -.597, p =.014). Subjects with a peak interleukin-6 of >100 pg/mL had a significantly lower nadir ERMBT compared with subjects with a peak interleukin-6 of <100 pg/mL (35.5% +/- 5.2% vs. 74.7% +/- 5.1%, p <.001). Acute inflammation after

Influence of P{sub 2}O{sub 5} and Al{sub 2}O{sub 3} content on the structure of erbium-doped borosilicate glasses and on their physical, thermal, optical and luminescence properties

DOE Office of Scientific and Technical Information (OSTI.GOV)