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Sample records for advanced electronic devices

  1. Future Opportunities for Advancing Glucose Test Device Electronics

    PubMed Central

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-01-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano “ink” composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, “ink,” and continuous processing development presents the opportunity for research collaboration with medical device designers. PMID:22027300

  2. Future opportunities for advancing glucose test device electronics.

    PubMed

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-09-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano "ink" composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, "ink," and continuous processing development presents the opportunity for research collaboration with medical device designers.

  3. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted.

  4. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  5. Development of advanced electron holographic techniques and application to industrial materials and devices.

    PubMed

    Yamamoto, Kazuo; Hirayama, Tsukasa; Tanji, Takayoshi

    2013-06-01

    The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming important techniques for materials science and device engineering. We also describe some applications of electron holography to the analysis of industrial materials and devices: GaAs compound semiconductors, solid oxide fuel cells and all-solid-state lithium ion batteries.

  6. Factors Associated With Electronic Cigarette Users’ Device Preferences and Transition From First Generation to Advanced Generation Devices

    PubMed Central

    Veldheer, Susan; Hrabovsky, Shari; Nichols, Travis T.; Wilson, Stephen J.; Foulds, Jonathan

    2015-01-01

    Introduction: Electronic cigarettes (e-cigs) are becoming increasingly popular but little is known about how e-cig users’ transition between the different device types and what device characteristics and preferences may influence the transition. Methods: Four thousand four hundred twenty-one experienced e-cig users completed an online survey about their e-cig use, devices, and preferences. Participants included in analysis were ever cigarette smokers who used an e-cig at least 30 days in their lifetime and who reported the type of their first and current e-cig device and the nicotine concentration of their liquid. Analyses focused on transitions between “first generation” devices (same size as a cigarette with no button) and “advanced generation” devices (larger than a cigarette with a manual button) and differences between current users of each device type. Results: Most e-cig users (n = 2603, 58.9%) began use with a first generation device, and of these users, 63.7% subsequently transitioned to current use of an advanced generation device. Among users who began use with an advanced generation device (n = 1818, 41.1%), only 5.7% transitioned to a first generation device. Seventy-seven percent of current advanced generation e-cig users switched to their current device in order to obtain a “more satisfying hit.” Battery capabilities and liquid flavor choices also influenced device choice. Conclusion: E-cig users commonly begin use with a device shaped like a cigarette and transition to a larger device with a more powerful battery, a button for manual activation and a wider choice of liquid flavors. PMID:25744966

  7. Recent Advance in Thermoelectric Devices for Electronics Cooling

    NASA Astrophysics Data System (ADS)

    Wang, Peng

    Thermal management of on-chip hot spot, with a heat flux of around 1000 W/cm2, has become one of the major challenges in the development of next-generation microprocessors. Solid state thermoelectric cooler (TEC) offers great promise for hot spot thermal management because of their compact structure, fast response, high reliability, localized cooling, and high flux removal capability. To date TEC has received great attentions in electronics cooling community as one of the potential hot spot cooling solutions. In this paper, recent development and application of hot spot cooling strategies based on micro thermoelectric technologies will be reviewed and discussed, three hot spot cooling concepts, including thinfilm thermoelectric cooling, mini-contact cooling, and semiconductor selfcooling in silicon substrate and germanium substrate will be discussed. The advantages and disadvantages of these on-chip cooling solutions for high flux hot spots will be evaluated.

  8. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    PubMed

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies.

  9. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    PubMed

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies. PMID:26779680

  10. Advances in molecular electronics: Synthesis and testing of potential molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Price, David Wilson, Jr.

    New potential molecular electronics devices have been synthesized based on our knowledge of previous systems that have come out of our group. Previous studies and current studies have shown that simple molecular systems demonstrate negative differential resistance (NDR) and memory characteristics. The new systems rely primarily on the redox properties of the compounds to improve upon the solid state properties already observed. Most of these new organic compounds use thiol-based "alligator clips" for attachment to metal surfaces. Some of the compounds, however, contain different "alligator clips," primarily isonitriles, for attachment to metal substrates. It is our hope that these new "alligator clips" will offer lower conductivity barriers (higher current density). Electrochemical tests have been performed in order to evaluate those redox properties and in the hope of using those electrochemical results as a predictive tool to evaluate the usefulness of those compounds. Also, organic structures with polymerizable functionalities have been synthesized in order to cross-link the molecules once they are a part of a self-assembled monolayer (SAM). This has been shown to enable the electrochemical growth of polypyrrole from a SAM in a controllable manner.

  11. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing.

    PubMed

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices. PMID:26233395

  12. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  13. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    NASA Astrophysics Data System (ADS)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  14. Prospects of application of superconducting electrodynamic structures in electronic devices for their advancement to the terahertz range

    NASA Astrophysics Data System (ADS)

    Kuraev, A. A.; Kurkin, S. A.; Koronovskii, A. A.; Rak, A. O.; Sinitsyn, A. K.; Hramov, A. E.

    2015-04-01

    It is shown that the application of superconducting electrodynamic structures in microwave electronic devices not only improves their characteristics, but also creates premises for implementation of devices like the autophase traveling-wave tube (TWT) and peniotron operating in the millimeter range with their further advancement to the terahertz range, which is impossible for conventional electrodynamic structures with Ohmic losses. Superconducting corrugated waveguides make it possible to suspend limitations imposed on the output power of pulsed relativistic Cherenkov oscillators, which are associated with thermal degradation of the working surface of conventional waveguides with Ohmic losses.

  15. New advancements in charge-coupled device technology - Sub-electron noise and 4096 x 4096 pixel CCDs

    NASA Technical Reports Server (NTRS)

    Janesick, James R.; Elliott, Tom; Dingizian, Arsham; Bredthauer, Richard A.; Chandler, Charles E.

    1990-01-01

    This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.

  16. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  17. Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen; Niebuhr, Jason; Cruz, Santana; Lamoreaux, chris

    2007-01-01

    The advanced resistive exercise device (ARED), now at the prototype stage of development, is a versatile machine that can be used to perform different customized exercises for which, heretofore, it has been necessary to use different machines. Conceived as a means of helping astronauts and others to maintain muscle and bone strength and endurance in low-gravity environments, the ARED could also prove advantageous in terrestrial settings (e.g., health clubs and military training facilities) in which many users are exercising simultaneously and there is heavy demand for use of exercise machines.

  18. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  19. Electronic security device

    DOEpatents

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  20. Electronic security device

    DOEpatents

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  1. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    Sb-heterostructure backward diodes for millimeter-wave detection / N. Su ... [et al.]. A Mixed-signal row/Column architecture for very large monolithic mm-wave phased arrays / C. Carta, M. Seo and M. Rodwell. Terahertz emission from electrically pumped silicon germanium itersubband devices / N. Sustersic [et al.]. Terahertz sensing of materials / G. Xuan ... [et al.] -- III. silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N. A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin ... [et al.]. Non-volatile high speed & low power charge trapping devices / M. K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- III. Silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N. A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin ... [et al.]Non-volatile high speed & low power charge trapping devices / M. K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- IV. Nanoelelectronics and ballistic devices. Hybrid nanomaterials for multi-spectral infrared photodetection / A. D. Stiff-Roberts. Ballistic electron acceleration negative-differential-conductivity devices / B. Aslan ... [et al.] -- V. Photoluminescence and photocapacitance. Understanding ultraviolet emitter performance using intensity dependent Time-Resolved photoluminescence / M. Wraback ... [ et al.]. Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps / N. B. Gorev ... [et al.

  2. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  3. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  4. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  5. Nanoscale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Jing, Xiaoye

    Continuous downscaling in microelectronics has pushed conventional CMOS technology to its physical limits, while Moore's Law has correctly predicted the trend for decades, each step forward is accompanied with unprecedented technological difficulties and near-exponential increase in cost. At the same time, however, demands for low-power, low-cost and high-speed devices have never diminished, instead, even more stringent requirements have been imposed on device performances. It is therefore crucial to explore alternative materials and device architectures in order to alleviate the pressure caused by downscaling. To this end, we investigated two different approaches: (1) InSb nanowire based field effect transistors (NWFETs) and (2) single walled carbon nanotube (SWCNT) -- peptide nucleic acid (PNA) --SWCNT conjugate. Two types of InSb nanowires were synthesized by template-assisted electrochemistry and chemical vapor deposition (CVD) respectively. In both cases, NWFETs were fabricated by electron beam lithography (EBL) and crystallinity was confirmed by transmission electron microscopy (TEM) and selected area diffraction (SAD) patterns. For electrochemistry nanowire, ambipolar conduction was observed with strong p-type conduction, the effect of thermal annealing on the conductivity was analyzed, a NWFET model that took into consideration the underlapped region in top-gated NWFET was proposed. Hole mobility in the channel was calculated to be 292.84 cm2V-1s -1 with a density of 1.5x1017/cm3. For CVD nanowire, the diameter was below 40nm with an average of 20nm. Vapor-liquid-solid (VLS) process was speculated to be the mechanism responsible for nanowire growth. The efficient gate control was manifested by high ION/I OFF ratio which was on the order of 106 and a small inverse subthreshold slope (<200 mV/decade). Scale analysis was used to successfully account for disparities observed among a number of sample devices. N-type conduction was found in all NWFETs with

  6. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  7. Advanced Power Electronics Components

    NASA Technical Reports Server (NTRS)

    Schwarze, Gene E.

    2004-01-01

    This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

  8. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

  9. Single Molecule Electronics and Devices

    PubMed Central

    Tsutsui, Makusu; Taniguchi, Masateru

    2012-01-01

    The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

  10. Hybrid free electron laser devices

    SciTech Connect

    Asgekar, Vivek; Dattoli, G.

    2007-03-15

    We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

  11. Silk Fibroin for Flexible Electronic Devices.

    PubMed

    Zhu, Bowen; Wang, Hong; Leow, Wan Ru; Cai, Yurong; Loh, Xian Jun; Han, Ming-Yong; Chen, Xiaodong

    2016-06-01

    Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

  12. Mathematical Modeling of Electronic Devices and Circuits

    NASA Astrophysics Data System (ADS)

    Singh, B. P.; Singh, Meena; Roy, Sanjay Kumar

    2010-11-01

    The necessity of modeling lies in the nature of technology and its advancement. The modeling minimizes time and cost of the process involved. The mathematical model provides an insight into the behavior of the physical system that reduces the problem to its essential characteristics. The floating admittance matrix (FAM) approach is an elegant method of mathematical modeling of electronic devices and circuits.

  13. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  14. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  15. Skylab electronic technological advancements

    NASA Technical Reports Server (NTRS)

    Hornback, G. L.

    1974-01-01

    The present work describes three electronic devices designed for use in the Skylab airlock module: the teleprinter system, the quartz crystal microbalance contamination monitor (QCM), and the speaker. Design considerations, operation, characteristics, and system development are described for these systems, with accompanying diagrams, graphs, and photographs. The teleprinter is a thermal dot printer used to produce hard copy messages by electrically heating print elements in contact with heat-sensitive paper. The QCM was designed to estimate contamination buildup on optical surfaces of the earth resources experiment package. A vibrating quartz crystal is used as a microbalance relating deposited mass to shifts in the crystal's resonant frequency. Audio devices provide communication between crew members and between crew and STDN, and also provide audible alarms, via the caution and warning system, of out-of-limit-conditions.

  16. Electronic measurement correction devices

    SciTech Connect

    Mahns, R.R.

    1984-04-01

    The electronics semi-conductor revolution has touched every industry and home in the nation. The gas industry is no exception. Sophisticated gas measurement instrumentation has been with us for several decades now, but only in the last 10 years or so has it really begun to boom. First marketed were the flow computers dedicated to orifice meter measurement; but with steadily decreasing manufacturing costs, electronic instrumentation is now moving into the area of base volume, pressure and temperature correction previously handled almost solely by mechanical integrating instruments. This paper takes a brief look at some of the features of the newcomers on the market and how they stack up against the old standby mechanical base volume/pressure/temperature correctors.

  17. Polymer electronic devices and materials.

    SciTech Connect

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  18. Ion plated electronic tube device

    DOEpatents

    Meek, T.T.

    1983-10-18

    An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  19. Stretchable Hydrogel Electronics and Devices.

    PubMed

    Lin, Shaoting; Yuk, Hyunwoo; Zhang, Teng; Parada, German Alberto; Koo, Hyunwoo; Yu, Cunjiang; Zhao, Xuanhe

    2016-06-01

    Stretchable hydrogel electronics and devices are designed by integrating stretchable conductors, functional chips, drug-delivery channels, and reservoirs into stretchable, robust, and biocompatible hydrogel matrices. Novel applications include a smart wound dressing capable of sensing the temperatures of various locations on the skin, delivering different drugs to these locations, and subsequently maintaining sustained release of drugs.

  20. Stretchable Hydrogel Electronics and Devices.

    PubMed

    Lin, Shaoting; Yuk, Hyunwoo; Zhang, Teng; Parada, German Alberto; Koo, Hyunwoo; Yu, Cunjiang; Zhao, Xuanhe

    2016-06-01

    Stretchable hydrogel electronics and devices are designed by integrating stretchable conductors, functional chips, drug-delivery channels, and reservoirs into stretchable, robust, and biocompatible hydrogel matrices. Novel applications include a smart wound dressing capable of sensing the temperatures of various locations on the skin, delivering different drugs to these locations, and subsequently maintaining sustained release of drugs. PMID:26639322

  1. Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

    SciTech Connect

    Cooper, David; Denneulin, Thibaud; Barnes, Jean-Paul; Hartmann, Jean-Michel; Hutin, Louis; Le Royer, Cyrille; Beche, Armand; Rouviere, Jean-Luc

    2012-12-15

    Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.

  2. Advances in nonlethal electronic weaponry

    NASA Astrophysics Data System (ADS)

    McNulty, James F.

    1998-12-01

    Non-lethal electronic weapons in the form of tasers (a stand-off incapacitation device with a range of about 15 feet) and stun guns (which are not a gun, but a close contact stun device) have been used by law enforcement for over 18 years. The taser has dominated this market, since it does not require the close physical contact (with the resultant injuries) that the stun gun requires. Tasers are effective against even determined assailants where OC or pepper sprays consistently fail. The taser also does not have the close range lethality of low impact munitions. These electronic non-lethal weapons have saved the lives of thousands of suspects and have prevented the injury of thousands of law enforcement officers. Recent advances in laser sight technology have permitted the development of a patented dual laser sight that not only increased accuracy, but have made these weapons even more intimidating, increasing surrender rates. Now increased ranges are feasible and r & d on non-lethal military weapons to replace the anti-personnel landmine has resulted in new, unmanned, non-lethal taser weapons for law enforcement corrections and border patrol perimeter control use.

  3. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  4. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  5. Advanced electron microscopy for advanced materials.

    PubMed

    Van Tendeloo, Gustaaf; Bals, Sara; Van Aert, Sandra; Verbeeck, Jo; Van Dyck, Dirk

    2012-11-01

    The idea of this Review is to introduce newly developed possibilities of advanced electron microscopy to the materials science community. Over the last decade, electron microscopy has evolved into a full analytical tool, able to provide atomic scale information on the position, nature, and even the valency atoms. This information is classically obtained in two dimensions (2D), but can now also be obtained in 3D. We show examples of applications in the field of nanoparticles and interfaces.

  6. Carbon footprint of electronic devices

    NASA Astrophysics Data System (ADS)

    Sloma, Marcin

    2013-07-01

    Paper assesses the greenhouse gas emissions related to the electronic sectors including information and communication technology and media sectors. While media often presents the carbon emission problem of other industries like petroleum industry, the airlines and automobile sectors, plastics and steel manufacturers, the electronics industry must include the increasing carbon footprints caused from their applications like media and entertainment, computers and cooling devices, complex telecommunications networks, cloud computing and powerful mobile phones. In that sense greenhouse gas emission of electronics should be studied in a life cycle perspective, including regular operational electricity use. Paper presents which product groups or processes are major contributors in emission. From available data and extrapolation of existing information we know that the information and communication technology sector produced 1.3% and media sector 1.7% of global gas emissions within production cycle, using the data from 2007.In the same time global electricity use of that sectors was 3.9% and 3.2% respectively. The results indicate that for both sectors operation leads to more gas emissions than manufacture, although impacts from the manufacture is significant, especially in the supply chain. Media electronics led to more emissions than PCs (manufacture and operation). Examining the role of electronics in climate change, including disposal of its waste, will enable the industry to take internal actions, leading to lowering the impact on the climate change within the sector itself.

  7. Thermoelectric Devices Advance Thermal Management

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Thermoelectric (TE) devices heat, cool, and generate electricity when a temperature differential is provided between the two module faces. In cooperation with NASA, Chico, California-based United States Thermoelectric Consortium Inc. (USTC) built a gas emissions analyzer (GEA) for combustion research. The GEA precipitated hydrocarbon particles, preventing contamination that would hinder precise rocket fuel analysis. The USTC research and design team uses patent-pending dimple, pin-fin, microchannel and microjet structures to develop and design heat dissipation devices on the mini-scale level, which not only guarantee high performance of products, but also scale device size from 1 centimeter to 10 centimeters. USTC continues to integrate the benefits of TE devices in its current line of thermal management solutions and has found the accessibility of NASA technical research to be a valuable, sustainable resource that has continued to positively influence its product design and manufacturing

  8. New electronic measurement, control devices

    NASA Astrophysics Data System (ADS)

    1985-04-01

    The electronic control device serves to measure the capacitance of the loss factor tg delta and the leakage current of tantalum and electrolytic capacitors. During the measurement of the leakage current, the capacitor can be polarized from an internal source with constant voltage regulated continuously from 0 to 100 V, or with a voltage of up to 500 V from an external source. The instrument has a system signalizing the loading state of the capacitor and a system for unloading it. The meter has two readout fields with LED display indicators: 3 and 5-digit for measuring the capacitance and the leakage current; 3-digit for measurement of tg delta and polarization intensity. The choice of the range for capacitance measurement can be done manually or from outside. The capacitance measurement is performed by the four-point technique in a serial replacement system. The meter with the corresponding interface block can operate in measurement systems according to IEC/ISP II standard.

  9. 78 FR 1247 - Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media... United States after importation of certain electronic devices, including wireless communication devices... importation of certain electronic devices, including wireless communication devices, tablet computers,...

  10. Recent Advancements in Functionalized Paper-Based Electronics.

    PubMed

    Lin, Yang; Gritsenko, Dmitry; Liu, Qian; Lu, Xiaonan; Xu, Jie

    2016-08-17

    Building electronic devices on ubiquitous paper substrates has recently drawn extensive attention due to its light weight, low cost, environmental friendliness, and ease of fabrication. Recently, a myriad of advancements have been made to improve the performance of paper electronics for various applications, such as basic electronic components, energy storage devices, generators, antennas, and electronic circuits. This review aims to summarize this progress and discuss different perspectives of paper electronics as well as the remaining challenges yet to be overcome in this field. Other aspects included in this review are the fundamental characteristics of paper, modification of paper with functional materials, and various methods for device fabrication. PMID:27463253

  11. Recent Advancements in Functionalized Paper-Based Electronics.

    PubMed

    Lin, Yang; Gritsenko, Dmitry; Liu, Qian; Lu, Xiaonan; Xu, Jie

    2016-08-17

    Building electronic devices on ubiquitous paper substrates has recently drawn extensive attention due to its light weight, low cost, environmental friendliness, and ease of fabrication. Recently, a myriad of advancements have been made to improve the performance of paper electronics for various applications, such as basic electronic components, energy storage devices, generators, antennas, and electronic circuits. This review aims to summarize this progress and discuss different perspectives of paper electronics as well as the remaining challenges yet to be overcome in this field. Other aspects included in this review are the fundamental characteristics of paper, modification of paper with functional materials, and various methods for device fabrication.

  12. Thermally triggered degradation of transient electronic devices.

    PubMed

    Park, Chan Woo; Kang, Seung-Kyun; Hernandez, Hector Lopez; Kaitz, Joshua A; Wie, Dae Seung; Shin, Jiho; Lee, Olivia P; Sottos, Nancy R; Moore, Jeffrey S; Rogers, John A; White, Scott R

    2015-07-01

    Thermally triggered transient electronics using wax-encapsulated acid, which enable rapid device destruction via acidic degradation of the metal electronic components are reported. Using a cyclic poly(phthalaldehyde) (cPPA) substrate affords a more rapid destruction of the device due to acidic depolymerization of cPPA.

  13. Synaptic electronics: materials, devices and applications.

    PubMed

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  14. Advanced Electron Microscopy in Materials Physics

    SciTech Connect

    Zhu, Y.; Jarausch, K.

    2009-06-01

    Aberration correction has opened a new frontier in electron microscopy by overcoming the limitations of conventional round lenses, providing sub-angstrom-sized probes and extending information limits. The imaging and analytical performance of these corrector-equipped microscopes affords an unprecedented opportunity to study structure-property relationships of matter at the atomic scale. This new generation of microscopes is able to retrieve high-quality structural information comparable to neutron and synchrotron x-ray experiments, but with local atomic resolution. These advances in instrumentation are accelerating the research and development of various functional materials ranging from those for energy generation, conversion, transportation and storage to those for catalysis and nano-device applications. The dramatic improvements in electron-beam illumination and detection also present a host of new challenges for the interpretation and optimization of experiments. During 7-9 November 2007, a workshop, entitled 'Aberration Corrected Electron Microscopy in Material Physics', was convened at the Center for Functional Nanomaterials, Brookhaven National Laboratories (BNL) to address these opportunities and challenges. The workshop was co-sponsored by Hitachi High Technologies, a leader in electron microscopy instrumentation, and BNL's Institute of Advanced Electron Microscopy, a leader in materials physics research using electron microscopy. The workshop featured presentations by internationally prominent scientists working at the frontiers of electron microscopy, both on developing instrumentation and applying it in materials physics. The meeting, structured to stimulate scientific exchanges and explore new capabilities, brought together {approx}100 people from over 10 countries. This special issue complies many of the advances in instrument performance and materials physics reported by the invited speakers and attendees at the workshop.

  15. High temperature electronic gain device

    DOEpatents

    McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

  16. Advanced Electro-Optic Surety Devices

    SciTech Connect

    Watterson, C.E.

    1997-05-01

    The Advanced Electro-Optic Surety Devices project was initiated in march 1991 to support design laboratory guidance on electro-optic device packaging and evaluation. Sandia National Laboratory requested AlliedSignal Inc., Kansas City Division (KCD), to prepare for future packaging efforts in electro-optic integrated circuits. Los Alamos National Laboratory requested the evaluation of electro-optic waveguide devices for nuclear surety applications. New packaging techniques involving multiple fiber optic alignment and attachment, binary lens array development, silicon V-groove etching, and flip chip bonding were requested. Hermetic sealing of the electro-optic hybrid and submicron alignment of optical components present new challenges to be resolved. A 10-channel electro-optic modulator and laser amplifier were evaluated for potential surety applications.

  17. Advances in device and formulation technologies for pulmonary drug delivery.

    PubMed

    Chan, John Gar Yan; Wong, Jennifer; Zhou, Qi Tony; Leung, Sharon Shui Yee; Chan, Hak-Kim

    2014-08-01

    Inhaled pharmaceuticals are formulated and delivered differently according to the therapeutic indication. However, specific device-formulation coupling is often fickle, and new medications or indications also demand new strategies. The discontinuation of chlorofluorocarbon propellants has seen replacement of older metered dose inhalers with dry powder inhaler formulations. High-dose dry powder inhalers are increasingly seen as an alternative dosage form for nebulised medications. In other cases, new medications have completely bypassed conventional inhalers and been formulated for use with unique inhalers such as the Staccato® device. Among these different devices, integration of software and electronic assistance has become a shared trend. This review covers recent device and formulation advances that are forming the current landscape of inhaled therapeutics. PMID:24728868

  18. Inverted organic electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Small, Cephas E.

    The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8

  19. Emerging electronic devices for THz sensing and imaging

    NASA Astrophysics Data System (ADS)

    Fay, P.; Xie, Y.; Zhao, Y.; Jiang, Z.; Rahman, S.; Xing, H.; Sensale-Rodriguez, B.; Liu, L.

    2014-09-01

    Continuing advances in scaling of conventional semiconductor devices are enabling mainstream electronics to operate in the millimeter-wave through THz regime. At the same time, however, novel devices and device concepts are also emerging to address the key challenges for systems in this frequency range, and may offer performance and functional advantages for future systems. In addition to new devices, advances in integration technology and novel system concepts also promise to provide substantial system-level performance and functionality enhancements. Several emerging devices and device concepts, as well as circuit-level concepts to take advantage of them, are discussed. Based on unconventional semiconductor device structures and operational principles, these devices offer the potential for significantly improved system sensitivity and frequency coverage. When combined in arrays, features such as polarimetric detection and frequency tunability for imaging can be achieved. As examples of emerging devices for millimeter-wave through THz sensing and imaging, heterostructure backward diodes in the InAs/AlSb/GaSb material system and GaN-based plasma-wave high electron mobility transistors (HEMTs) will be discussed. Based on interband tunneling, heterostructure backward diodes offer significantly increased sensitivity and extremely low noise for direct detection applications, and have been demonstrated with cutoff frequencies exceeding 8 THz. The plasma-wave HEMT is an emerging device concept that, by leveraging plasma-wave resonances in the two-dimensional electron gas within the channel of the HEMT, offers the prospect for both tunable narrowband detection as well as low-noise amplification at frequencies well into the THz. These emerging devices are both amenable to direct integration within compact planar radiating structures such as annular slot antennas for realization of polarimetric detection and frequency tuning for spectroscopy and imaging.

  20. Exploiting plasmon-induced hot electrons in molecular electronic devices.

    PubMed

    Conklin, David; Nanayakkara, Sanjini; Park, Tae-Hong; Lagadec, Marie F; Stecher, Joshua T; Chen, Xi; Therien, Michael J; Bonnell, Dawn A

    2013-05-28

    Plasmonic nanostructures can induce a number of interesting responses in devices. Here we show that hot electrons can be extracted from plasmonic particles and directed into a molecular electronic device, which represents a new mechanism of transfer from light to electronic transport. To isolate this phenomenon from alternative and sometimes simultaneous mechanisms of plasmon-exciton interactions, we designed a family of hybrid nanostructure devices consisting of Au nanoparticles and optoelectronically functional porphyin molecules that enable precise control of electronic and optical properties. Temperature- and wavelength-dependent transport measurements are analyzed in the context of optical absorption spectra of the molecules, the Au particle arrays, and the devices. Enhanced photocurrent associated with exciton generation in the molecule is distinguished from enhancements due to plasmon interactions. Mechanisms of plasmon-induced current are examined, and it is found that hot electron generation can be distinguished from other possibilities. PMID:23550717

  1. Sub-electron noise charge coupled devices

    NASA Technical Reports Server (NTRS)

    Chandler, Charles E.; Bredthauer, Richard A.; Janesick, James R.; Westphal, James A.; Gunn, James E.

    1990-01-01

    A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

  2. Mechanically driven electronic correction devices

    SciTech Connect

    Bennett, R.

    1995-12-01

    Mechanical correctors still remain in the field by the thousands and will continue to do so for a while. But the electronic corrector with its improved accuracy, lower service costs, and greater flexibility of communications and data logging will make great strides in the gas industry market in the coming years.

  3. Electronically Controlled Continuous Culture Device

    PubMed Central

    Eisler, William J.; Webb, Robert B.

    1968-01-01

    A photocell-controlled continuous culture device, a Nephelostat, is described that maintains a wide variety of cultures of microorganisms in balanced growth. This Nephelostat controls concentrations of bacteria within ±3% over a cell concentration range of 106 to 109 cells per ml. Growth rates are recorded so that changes in the growth rate are observed over small increments of time. Spontaneous and caffeine-induced mutation rates of two strains of Escherichia coli were compared under Nephelostat and chemostat conditions. Images Fig. 1 Fig. 3 Fig. 4 PMID:4877660

  4. Electronic cooling using thermoelectric devices

    SciTech Connect

    Zebarjadi, M.

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  5. Electronic cooling using thermoelectric devices

    NASA Astrophysics Data System (ADS)

    Zebarjadi, M.

    2015-05-01

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  6. Electron cooling device for TARN II

    SciTech Connect

    Tanabe, T.; Hirao, Y.; Honma, T.; Kodaira, M.; Noda, A.; Sato, K.; Sekiguchi, M.; Takanaka, M.; Tanaka, J.; Tsujikawa, H.

    1985-10-01

    Light to heavy ions accelerated by a synchrotron TARN II are planned to be cooled by the electron cooling method. A device to cool these ions up to energies of 200 MeV/A is under construction. The electron energies are variable from 15 to 120 keV and the maximum current density is 0.5 A/cmS. The length of interaction region between electrons and ions is about 1.5 m. Design of the electron guiding coils and high voltage system is described as well as the calculated electron trajectories. The status and prospect for the cooling project are given.

  7. 77 FR 60720 - Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data... infringing electronic devices, including wireless communication devices, portable music and data...

  8. Flexible Organic Electronics in Biology: Materials and Devices.

    PubMed

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-01

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area.

  9. Flexible Organic Electronics in Biology: Materials and Devices.

    PubMed

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-01

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. PMID:25393596

  10. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  12. Insertion devices for the Advanced Light Source at LBL

    SciTech Connect

    Hassenzahl, W.; Chin, J.; Halbach, K.; Hoyer, E.; Humphries, D.; Kincaid, B.; Savoy, R.

    1989-03-01

    The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory will be the first of the new generation of dedicated synchrotron light sources to be put into operation. Specially designed insertion devices will be required to realize the high brightness photon beams made possible by the low emittance of the electron beam. The complement of insertion devices on the ALS will include undulators with periods as short as 3.9 cm and one or more high field wigglers. The first device to be designed is a 5 m long, 5 cm period, hybrid undulator. The goal of very high brightness and high harmonic output imposes unusually tight tolerances on the magnetic field quality and thus on the mechanical structure. The design process, using a generic structure for all undulators, is described. 5 refs., 4 figs., 1 tab.

  13. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  14. Towards reproducible, scalable lateral molecular electronic devices

    SciTech Connect

    Durkan, Colm Zhang, Qian

    2014-08-25

    An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

  15. Electronic device aspects of neural network memories

    NASA Technical Reports Server (NTRS)

    Lambe, J.; Moopenn, A.; Thakoor, A. P.

    1985-01-01

    The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

  16. Susceptor heating device for electron beam brazing

    DOEpatents

    Antieau, Susan M.; Johnson, Robert G. R.

    1999-01-01

    A brazing device and method are provided which locally apply a controlled amount of heat to a selected area, within a vacuum. The device brazes two components together with a brazing metal. A susceptor plate is placed in thermal contact with one of the components. A serrated pedestal supports the susceptor plate. When the pedestal and susceptor plate are in place, an electron gun irradiates an electron beam at the susceptor plate such that the susceptor plate is sufficiently heated to transfer heat through the one component and melt the brazing metal.

  17. HIRFL-CSR electron cooling devices

    NASA Astrophysics Data System (ADS)

    Yang, X. D.; Zhao, H. W.; Xia, J. W.; Zhan, W. L.; Wei, B. W.; Parkhomchuk, V. V.

    2001-12-01

    Electron cooling devices for HIRFL-CSR were under construction through collaboration between BINP and IMP [1]. The main parameters, design points and progress of the cooler devices will be presented. The electron motions in the gun region, adiabatic expansion region, toroid region and collector region were simulated with the help of numerical calculation. Cooling times of the typical heavy ions with injection energy were calculated with aid of the code. The prototypes of solenoid coils at the cooling section were fabricated and measured, the results show that the transverse components of the magnetic field for single coil is less than 2×10-4.

  18. RCRA toxicity characterization of discarded electronic devices.

    PubMed

    Musson, Stephen E; Vann, Kevin N; Jang, Yong-Chul; Mutha, Sarvesh; Jordan, Aaron; Pearson, Brian; Townsend, Timothy G

    2006-04-15

    The potential for discarded electronic devices to be classified as toxicity characteristic (TC) hazardous waste under provisions of the Resource Conservation and Recovery Act (RCRA) using the toxicity characteristic leaching procedure (TCLP) was examined. The regulatory TCLP method and two modified TCLP methods (in which devices were disassembled and leached in or near entirety) were utilized. Lead was the only element found to leach at concentrations greater than its TC limit (5 mg/L). Thirteen different types of electronic devices were tested using either the standard TCLP or modified versions. Every device type leached lead above 5 mg/L in at least one test and most devices leached lead above the TC limit in a majority of cases. Smaller devices that contained larger amounts of plastic and smaller amounts of ferrous metal (e.g., cellular phones, remote controls) tended to leach lead above the TC limit at a greater frequency than devices with more ferrous metal (e.g., computer CPUs, printers).

  19. Transient (lightning) protection for electronic measurement devices

    SciTech Connect

    Black, L.L.

    1995-12-01

    Electronic measurement devices have become a major part of the oil and gas business today. All of these devices operate on an electrical voltage. Any voltage introduced into the system that is beyond the predetermined tolerance will cause degradation of performance or in some cases failure of the device. The extent of the damage depends upon the dielectric strength of the circuit in question and upon the available energy. As electronic measurement devices are further developed to incorporate more solid state circuitry and operate at lower voltage levels the more susceptible they become to transients. Along with transient protection, the user must also be concerned with intrinsic safety requirements of the device to be protected. The devices and techniques used to protect the equipment from transients do not, in all cases, guarantee the user certification for use in hazardous environments. As a note of reference, some of the techniques listed in this paper as examples would not be allowed in hazardous areas without the addition of other devices to further isolate or clamp the available energy to a safe level. In other words, as the industry moves forward to improve the overall accuracy of the measurement system and adds data availability via communication networks, the transient protection scheme must become more sophisticated.

  20. Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

    NASA Technical Reports Server (NTRS)

    Patterson, Richard; Hammoud, Ahmad; Dones, Keishla R.

    2009-01-01

    Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

  1. Disabling CNT Electronic Devices by Use of Electron Beams

    NASA Technical Reports Server (NTRS)

    Petkov, Mihail

    2008-01-01

    Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide

  2. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  3. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  4. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  5. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Wilson, Thomas S.; Hamilton, Julie K.; Benett, William J.; Tovar, Armando R.

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  6. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  7. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  8. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  9. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  10. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  11. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  12. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  13. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  14. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  15. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  16. Animation Based Learning of Electronic Devices

    ERIC Educational Resources Information Center

    Gero, Aharon; Zoabi, Wishah; Sabag, Nissim

    2014-01-01

    Two-year college teachers face great difficulty when they teach the principle of operation of the bipolar junction transistor--a subject which forms the basis for electronics studies. The difficulty arises from both the complexity of the device and by the lack of adequate scientific background among the students. We, therefore, developed a unique…

  17. New materials for electronic and solar devices

    SciTech Connect

    Not Available

    1990-12-21

    The partial contents are: New materials for electronic and solar devices; Applications of the photovoltaic systems; Technological steps in the solar cell production; Examples of the cell processing technology; Economic aspects of the PV panels production; Application of PV systems; Leading PV research centers and companies.

  18. The Miniguide: A New Electronic Travel Device.

    ERIC Educational Resources Information Center

    Hill, Jeremy; Black, John

    2003-01-01

    This article describes the Miniguide, a new electronic travel device that assists people in moving about in a range of environments. The Miniguide is held in the palm and is used to scan left to right when walking. It provides vibratory feedback to the hand when it detects an obstacle. (Contains 5 references.) (CR)

  19. Electronic Devices and Systems. Energy Technology Series.

    ERIC Educational Resources Information Center

    Technical Education Research Centre-Southwest, Waco, TX.

    This course in electronic devices and systems is one of 16 courses in the Energy Technology Series developed for an Energy Conservation-and-Use Technology curriculum. Intended for use in two-year postsecondary technical institutions to prepare technicians for employment, the courses are also useful in industry for updating employees in…

  20. General Electronics Technician: Semiconductor Devices and Circuits.

    ERIC Educational Resources Information Center

    Hilley, Robert

    These instructional materials include a teacher's guide designed to assist instructors in organizing and presenting an introductory course in general electronics focusing on semiconductor devices and circuits and a student guide. The materials are based on the curriculum-alignment concept of first stating the objectives, developing instructional…

  1. High performance flexible electronics for biomedical devices.

    PubMed

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  2. Synaptic devices based on purely electronic memristors

    NASA Astrophysics Data System (ADS)

    Pan, Ruobing; Li, Jun; Zhuge, Fei; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao; Fu, Bing; Li, Kang

    2016-01-01

    Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

  3. Theory of Electron Imaging in Small Devices

    SciTech Connect

    Heller, Eric J.

    2015-05-21

    The research in this program involved theoretical investigations of the transport of charge in graphene and small heterostructure devices. There is an important trend toward imaging electronic systems in real space, with the goal of understanding the specifics of individual samples rather than settling for ensemble and statistical descriptions. For example one of our goals has been the understanding of scanning probe microscopy (SPM) imaging of systems in which the motion of the carriers is restricted to two degrees of freedom, such as in grapheme and the two dimensional electron (and hole) gas (2DEGs and 2DHGs) in GaAs/AlGaAs heterostructures, or when the motion is restricted to one degree of freedom as in nanowires. SPM imaging uses the tip of a movable charged probe to alter the electrons locally, depleting or alternatively increasing the amount of charges in the electron gas just below the tip results in a change to the flow pattern of the charge. The focus of this research was on understanding how the tunable tip affects functional aspects of the device that can be used to understand electronic and transport properties. For instance, scanning over the device while measuring the conductance results in conductance maps, an imaging of the charge transport. This imaging is often semi-direct and requires theory and interpretation to extract all that can be deduced about the underlying physical quantities.

  4. Stretchable inorganic nanomembrane electronics for healthcare devices

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeong; Son, Donghee; Kim, Jaemin

    2015-05-01

    Flexible or stretchable electronic devices for healthcare technologies have attracted much attention in terms of usefulness to assist doctors in their operating rooms and to monitor patients' physical conditions for a long period of time. Each device to monitor the patients' physiological signals real-time, such as strain, pressure, temperature, and humidity, etc. has been reported recently. However, their limitations are found in acquisition of various physiological signals simultaneously because all the functions are not assembled in one skin-like electronic system. Here, we describe a skin-like, multi-functional healthcare system, which includes single crystalline silicon nanomembrane based sensors, nanoparticle-integrated non-volatile memory modules, electro-resistive thermal actuators, and drug delivery. Smart prosthetics coupled with therapeutic electronic system would provide new approaches to personalized healthcare.

  5. Advanced Measurement Devices for the Microgravity Electromagnetic Levitation Facility EML

    NASA Technical Reports Server (NTRS)

    Brillo, Jurgen; Fritze, Holger; Lohofer, Georg; Schulz, Michal; Stenzel, Christian

    2012-01-01

    This paper reports on two advanced measurement devices for the microgravity electromagnetic levitation facility (EML), which is currently under construction for the use onboard the "International Space Station (ISS)": the "Sample Coupling Electronics (SCE)" and the "Oxygen Sensing and Control Unit (OSC)". The SCE measures by a contactless, inductive method the electrical resistivity and the diameter of a spherical levitated metallic droplet by evaluating the voltage and electrical current applied to the levitation coil. The necessity of the OSC comes from the insight that properties like surface tension or, eventually, viscosity cannot seriously be determined by the oscillating drop method in the EML facility without knowing the conditions of the surrounding atmosphere. In the following both measurement devices are explained and laboratory test results are presented.

  6. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  7. Nanocoaxes for Optical and Electronic Devices

    PubMed Central

    Rizal, Binod; Merlo, Juan M.; Burns, Michael J.; Chiles, Thomas C.; Naughton, Michael J.

    2014-01-01

    The evolution of micro/nanoelectronics technology, including the shrinking of devices and integrated circuit components, has included the miniaturization of linear and coaxial structures to micro/nanoscale dimensions. This reduction in the size of coaxial structures may offer advantages to existing technologies and benefit the exploration and development of new technologies. The reduction in the size of coaxial structures has been realized with various permutations between metals, semiconductors and dielectrics for the core, shield, and annulus. This review will focus on fabrication schemes of arrays of metal – nonmetal – metal nanocoax structures using non-template and template methods, followed by possible applications. The performance and scientific advantages associated with nanocoax-based optical devices including waveguides, negative refractive index materials, light emitting diodes, and photovoltaics are presented. In addition, benefits and challenges that accrue from the application of novel nanocoax structures in energy storage, electronic and sensing devices are summarized. PMID:25279400

  8. Electron cooling device without bending magnets

    NASA Astrophysics Data System (ADS)

    Sharapa, A. N.; Shemyakin, A. V.

    1993-11-01

    The scheme of an axisymmetric electron cooling device without bending magnets is proposed. Solutions for the most important elements, i.e., a gun and a recuperator, are considered. The main characteristics of the recuperator of the Faraday cup type having a reflector and a gun with a ring emitter are explored. In the gun, the beam is formed, the diameter of which is 40 mm and the dimension of a disturbance region is several millimeters.

  9. Micro- and Nanostructured Materials for Active Devices and Molecular Electronics

    SciTech Connect

    Martin, Peter M.; Graff, Gordon L.; Gross, Mark E.; Burrows, Paul E.; Bennett, Wendy D.; Mast, Eric S.; Hall, Michael G.; Bonham, Charles C.; Zumhoff, Mac R.; Williford, Rick E.

    2003-10-01

    Traditional single layer barrier coatings are not adequate in preventing degradation of the performance of organic molecular electronic and other active devices. Most advanced devices used in display technology now consist of micro and nanostructured small molecule, polymer and inorganic coatings with thin high reactive group 1A metals. This includes organic electronics such as organic light emitting devices (OLED). The lifetimes of these devices rapidly degrades when they are exposed to atmospheric oxygen and water vapor. Thin film photovoltaics and batteries are also susceptible to degradation by moisture and oxygen. Using in-line coating techniques we apply a composite nanostructured inorganic/polymer thin film barrier that restricts moisture and oxygen permeation to undetectable levels using conventional permeation test equipment. We describe permeation mechanisms for this encapsulation coating and flat panel display and other device applications. Permeation through the multilayer barrier coating is defect and pore limited and can be described by Knudsen diffusion involving a long and tortuous path. Device lifetime is also enhanced by the long lag times required to reach the steady state flux regime. Permeation rates in the range of 10-6 cc,g/m2/d have been achieved and OLED device lifetimes. The structure is robust, yet flexible. The resulting device performance and lifetimes will also be described. The barrier film can be capped with a thin film of transparent conductive oxide yielding an engineered nanostructured device for next generation, rugged, lightweight or flexible displays. This enables, for the first time, thin film encapsulation of emissive organic displays.

  10. Advanced devices and systems for radiation measurements

    SciTech Connect

    Knoll, G.F.; Wehe, D.K.; He, Z.; Barrett, C.; Miyamoto, J.

    1996-06-01

    The authors` most recent work continues their long-standing efforts to develop semiconductor detectors based on the collection of only a single type of charge carrier. Their best results are an extension of the principle of coplanar electrodes first described by Paul Luke of Lawrence Berkeley Laboratory 18 months ago. This technique, described in past progress reports, has the effect of deriving an output signal from detectors that depends only on the motion of carriers close to one surface. Since nearly all of these carriers are of one type (electrons) that are attracted to that electrode, the net effect is to nearly eliminate the influence of hole motion on the properties of the output signal. The result is that the much better mobility of electrons in compound semiconductors materials such as CZT can now be exploited without the concurrent penalty of poor hole collection. They have also developed new techniques in conjunction with the coplanar electrode principle that extends the technique into a new dimension. By proper processing of signals from the opposite electrode (the cathode) from the coplanar surface, they are able to derive a signal that is a good indication of the depth of interaction at which the charge carriers were initially formed. They have been the first group to demonstrate this technique, and examples of separate pulse height spectra recorded at a variety of different depths of interaction are shown in several of the figures that follow. Obtaining depth information is one step in the direction of obtaining volumetric point-of-interaction information from the detector. If one could known the coordinates of each specific interaction, then corrections could be applied to account for the inhomogeneities that currently plague many room-temperature devices.

  11. Secondary electron current loss in electron cooling devices

    NASA Astrophysics Data System (ADS)

    Sharapa, A. N.; Shemyakin, A. V.

    1994-12-01

    The efficiency of secondary electron capture in a recuperator with a longitudinal magnetic field is evaluated. To characterize this efficiency, the value of the collector secondary emission coefficient is introduced, for the calculation of which a simple formula is proposed. The effects determining the difference between the current losses in straight systems and devices with bending magnets are analyzed. It is experimentally shown that there is no unambiguous relation between the efficiency of the secondary electron capture by the collector and the current loss. The mechanism which determines the current loss in straight systems is suggested.

  12. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

    1998-08-25

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

  13. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

    1998-01-01

    A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

  14. Use of electronic portal imaging devices for electron treatment verification.

    PubMed

    Kairn, T; Aland, T; Crowe, S B; Trapp, J V

    2016-03-01

    This study aims to help broaden the use of electronic portal imaging devices (EPIDs) for pre-treatment patient positioning verification, from photon-beam radiotherapy to photon- and electron-beam radiotherapy, by proposing and testing a method for acquiring clinically-useful EPID images of patient anatomy using electron beams, with a view to enabling and encouraging further research in this area. EPID images used in this study were acquired using all available beams from a linac configured to deliver electron beams with nominal energies of 6, 9, 12, 16 and 20 MeV, as well as photon beams with nominal energies of 6 and 10 MV. A widely-available heterogeneous, approximately-humanoid, thorax phantom was used, to provide an indication of the contrast and noise produced when imaging different types of tissue with comparatively realistic thicknesses. The acquired images were automatically calibrated, corrected for the effects of variations in the sensitivity of individual photodiodes, using a flood field image. For electron beam imaging, flood field EPID calibration images were acquired with and without the placement of blocks of water-equivalent plastic (with thicknesses approximately equal to the practical range of electrons in the plastic) placed upstream of the EPID, to filter out the primary electron beam, leaving only the bremsstrahlung photon signal. While the electron beam images acquired using a standard (unfiltered) flood field calibration were observed to be noisy and difficult to interpret, the electron beam images acquired using the filtered flood field calibration showed tissues and bony anatomy with levels of contrast and noise that were similar to the contrast and noise levels seen in the clinically acceptable photon beam EPID images. The best electron beam imaging results (highest contrast, signal-to-noise and contrast-to-noise ratios) were achieved when the images were acquired using the higher energy electron beams (16 and 20 MeV) when the EPID was

  15. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  16. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  17. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  18. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  19. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  20. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  1. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  2. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  3. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  4. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  5. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  6. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  7. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  8. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  9. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  10. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  11. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  12. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  13. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  14. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  15. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  16. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  17. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  18. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  19. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  20. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  1. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  2. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  3. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  4. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-29

    ... COMMISSION Certain Electronic Imaging Devices; Institution of Investigation AGENCY: U.S. International Trade... importation, and the sale within the United States after importation of certain electronic imaging devices by... electronic imaging devices that infringe one or more of claims 1-5, 7, 8, 10, 22, 24, 26, 28, 31, 34-43,...

  5. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  6. Diversionary device history and revolutionary advancements.

    SciTech Connect

    Cooper, Paul W.; Grubelich, Mark Charles

    2005-04-01

    Diversionary devices also known as flash bangs or stun grenades were first employed about three decades ago. These devices produce a loud bang accompanied by a brilliant flash of light and are employed to temporarily distract or disorient an adversary by overwhelming their visual and auditory senses in order to gain a tactical advantage. Early devices that where employed had numerous shortcomings. Over time, many of these deficiencies were identified and corrected. This evolutionary process led to today's modern diversionary devices. These present-day conventional diversionary devices have undergone evolutionary changes but operate in the same manner as their predecessors. In order to produce the loud bang and brilliant flash of light, a flash powder mixture, usually a combination of potassium perchlorate and aluminum powder is ignited to produce an explosion. In essence these diversionary devices are small pyrotechnic bombs that produce a high point-source pressure in order to achieve the desired far-field effect. This high point-source pressure can make these devices a hazard to the operator, adversaries and hostages even though they are intended for 'less than lethal' roles. A revolutionary diversionary device has been developed that eliminates this high point-source pressure problem and eliminates the need for the hazardous pyrotechnic flash powder composition. This new diversionary device employs a fuel charge that is expelled and ignited in the atmosphere. This process is similar to a fuel air or thermobaric explosion, except that it is a deflagration, not a detonation, thereby reducing the overpressure hazard. This technology reduces the hazard associated with diversionary devices to all involved with their manufacture, transport and use. An overview of the history of diversionary device development and developments at Sandia National Laboratories will be presented.

  7. Oxide bipolar electronics: materials, devices and circuits

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; von Wenckstern, Holger

    2016-06-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo2O4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization.

  8. Advanced Electronics. Curriculum Development. Bulletin 1778.

    ERIC Educational Resources Information Center

    Eppler, Thomas

    This document is a curriculum guide for a 180-hour course in advanced electronics for 11th and 12th grades that has four instructional units. The instructional units are orientation, discrete components, integrated circuits, and electronic systems. The document includes a course flow chart; a two-page section that describes the course, lists…

  9. Aircrew Training Devices: Utility and Utilization of Advanced Instructional Features (Phase II-Air Training Command, Military Airlift Command, and Strategic Air Command [and] Phase III-Electronic Warfare Trainers).

    ERIC Educational Resources Information Center

    Polzella, Donald J.; Hubbard, David C.

    This document consists of an interim report and a final report which describe the second and third phases of a project designed to determine the utility and utilization of sophisticated hardware and software capabilities known as advanced instructional features (AIFs). Used with an aircrew training device (ATD), AIFs permit a simulator instructor…

  10. ARED (Advanced-Resistive Exercise Device) Update

    NASA Technical Reports Server (NTRS)

    Ploutz-Snyder, Lori

    2009-01-01

    This viewgraph presentation describes ARED which is a new hardware exercise device for use on the International Space Station. Astronaut physiological adaptations, muscle parameters, and cardiovascular parameters are also reviewed.

  11. Programmed electronic advance for engines

    SciTech Connect

    Dogadko, P.

    1987-03-03

    An ignition advance control is described for an internal combustion engine including a crankshaft, a throttle control, and at least one cylinder, the ignition advance control comprising a spark ignition circuit associated with the cylinder and including trigger means operative to cause an ignition spark, means for generating a control pulse associated with the cylinder, latch means for enabling the trigger means in response to generation of the control pulse, means for generating a constant plurality of sequentially occurring electrical reference pulses during each revolution of the crankshaft, means for counting the reference pulses developed during each revolution of the crankshaft, means for firing the enabled trigger means in response to the counting means counting a predetermined number of the reference pulses to cause the ignition spark at a predetermined ignition point in each revolution of the crankshaft, means for sensing the position of the throttle control, and means responsive to the throttle sensing means for varying the predetermined number of reference pulses solely in accordance with the position of the throttle control to vary the predetermined ignition point as appropriate for the position of the throttle control.

  12. Microfluidic Devices in Advanced Caenorhabditis elegans Research.

    PubMed

    Muthaiyan Shanmugam, Muniesh; Subhra Santra, Tuhin

    2016-01-01

    The study of model organisms is very important in view of their potential for application to human therapeutic uses. One such model organism is the nematode worm, Caenorhabditis elegans. As a nematode, C. elegans have ~65% similarity with human disease genes and, therefore, studies on C. elegans can be translated to human, as well as, C. elegans can be used in the study of different types of parasitic worms that infect other living organisms. In the past decade, many efforts have been undertaken to establish interdisciplinary research collaborations between biologists, physicists and engineers in order to develop microfluidic devices to study the biology of C. elegans. Microfluidic devices with the power to manipulate and detect bio-samples, regents or biomolecules in micro-scale environments can well fulfill the requirement to handle worms under proper laboratory conditions, thereby significantly increasing research productivity and knowledge. The recent development of different kinds of microfluidic devices with ultra-high throughput platforms has enabled researchers to carry out worm population studies. Microfluidic devices primarily comprises of chambers, channels and valves, wherein worms can be cultured, immobilized, imaged, etc. Microfluidic devices have been adapted to study various worm behaviors, including that deepen our understanding of neuromuscular connectivity and functions. This review will provide a clear account of the vital involvement of microfluidic devices in worm biology. PMID:27490525

  13. A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Solaro, Yohann; Fonteneau, Pascal; Legrand, Charles-Alex; Marin-Cudraz, David; Golanski, Dominique; Ferrari, Philippe; Cristoloveanu, Sorin

    2016-11-01

    A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.

  14. Instrumentation for Molecular Electronics Device Research

    NASA Astrophysics Data System (ADS)

    Kibel, Ashley Ann

    This dissertation describes work on three projects concerning the design and implementation of instrumentation used to study potential organic electronic devices. The first section describes the conducting atomic force microscope (CAFM) in the study of the mechanical and electronic interactions between DNA bases and nucleosides. Previous STM data suggested that an STM tip could recognize single base pairs through an electronic interaction after a functionalized tip made contact with a self assembled monolayer then was retracted. The conducting AFM was employed in order to understand the mechanical interactions of such a system and how they were affecting electrical responses. The results from the conducting AFM showed that the scanning probe system was measuring multiple base-pair interactions, and thus did not have single base resolution. Further, results showed that the conductance between a single base-nucleoside pair is below the detection limit of a potential commercial sequencing device. The second section describes the modifications of a scanning probe microscope in order to study the conductance of single organic molecules under illumination. Modifications to the scanning probe microscope are described as are the control and data analysis software for an experiment testing the single molecule conductance of an organic molecule under illumination. This instrument was then tested using a novel charge-separation molecule, which is being considered for its potential photovoltaic properties. The experiments showed that the instrumentation is capable of detecting differences in conductance upon laser illumination of the molecule on a transparent conductive surface. The third section describes measurements using the illuminated CAFM, as well as the design and construction of an illuminated mercury drop electrode apparatus. Both instruments were tested by attempting to observe photovoltaic behavior in a novel self-organized film of the charge-separation molecules

  15. Individual carbon nanotubes for quantum electronic and quantum photonic devices

    NASA Astrophysics Data System (ADS)

    Ai, Nan

    2011-12-01

    Carbon nanotubes (CNTs) are promising materials since their unique one dimensional geometry leads to remarkable physical properties such as ballistic transport, long mean free path, large direct band gaps, high mechanical tensile strength and strong exciton binding energies, which make them attractive candidates for applications in high-performance nanoelectronics and nanophotonics. CNT-based field-effect transistors (CNT-FETs) are considered to be ideally suited for future nanoelectronics. Single CNT-FETs made by depositing metal electrodes on top of individual CNTs with E-beam lithography have achieved great performance but are limited for massive large area integrated circuit fabrication. Therefore, this thesis demonstrates characteristics of CNT-FETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition (CVD), resulting in CNT arrays directly bridging source and drain. The demonstrated access to individual CNTs with pronounced semiconducting behavior opens also the possibility to form more advanced nanoelectronic structures such as CNT quantum dots. CNT-based single electron transistors (CNT-SETS) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. In addition to existing CNT-SETS based on individual CNTs, we have fabricated the first CNT-SETS based on in-plane grown CNTs using the CVD technique. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices. Blinking and spectral diffusion are hallmarks of nanoscale light emitters and a challenge for creating stable fluorescent biomarkers or efficient nonclassical light sources. The studies of blinking of CNTs are still in the explorative stage. In this thesis, I show the first experimental

  16. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  17. The Jordy Electronic Magnification Device: Opinions, Observations, and Commentary

    ERIC Educational Resources Information Center

    Francis, Barry

    2005-01-01

    The Jordy electronic magnification device is one of a small number of electronic headborne devices designed to provide people with low vision the capability to perform near-range, intermediate-range, and distance viewing tasks. This report seeks to define the benefits of using the Jordy as a low vision device by people who are legally blind. The…

  18. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  19. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  20. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  1. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  2. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  3. Investigation of relativistic runaway electrons in electron cyclotron resonance heating discharges on Korea Superconducting Tokamak Advanced Research

    SciTech Connect

    Kang, C. S.; Lee, S. G.

    2014-07-15

    The behavior of relativistic runaway electrons during Electron Cyclotron Resonance Heating (ECRH) discharges is investigated in the Korea Superconducting Tokamak Advanced Research device. The effect of the ECRH on the runaway electron population is discussed. Observations on the generation of superthermal electrons during ECRH will be reported, which will be shown to be consistent with existing theory for the development of a superthermal electron avalanche during ECRH [A. Lazaros, Phys. Plasmas 8, 1263 (2001)].

  4. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  5. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  6. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  7. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  8. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  9. Ion beam processing of advanced electronic materials

    SciTech Connect

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.; International Business Machines Corp., Yorktown Heights, NY . Thomas J. Watson Research Center; Oak Ridge National Lab., TN )

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  10. Electrical and electronic devices and components: A compilation

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

  11. Advanced materials and concepts for energy storage devices

    NASA Astrophysics Data System (ADS)

    Teng, Shiang Jen

    Over the last decade, technological progress and advances in the miniaturization of electronic devices have increased demands for light-weight, high-efficiency, and carbon-free energy storage devices. These energy storage devices are expected to play important roles in automobiles, the military, power plants, and consumer electronics. Two main types of electrical energy storage systems studied in this research are Li ion batteries and supercapacitors. Several promising solid state electrolytes and supercapacitor electrode materials are investigated in this research. The first section of this dissertation is focused on the novel results on pulsed laser annealing of Li7La3Zr2O12 (LLZO). LLZO powders with a tetragonal structure were prepared by a sol-gel technique, then a pulsed laser annealing process was employed to convert the tetragonal powders to cubic LLZO without any loss of lithium. The second section of the dissertation reports on how Li5La 3Nb2O12 (LLNO) was successfully synthesized via a novel molten salt synthesis (MSS) method at the relatively low temperature of 900°C. The low sintering temperature prevented the loss of lithium that commonly occurs during synthesis using conventional solid state or wet chemical reactions. The second type of energy storage device studied is supercapacitors. Currently, research on supercapacitors is focused on increasing their energy densities and lowering their overall production costs by finding suitable electrode materials. The third section of this dissertation details how carbonized woods electrodes were used as supercapacitor electrode materials. A high energy density of 45.6 Wh/kg and a high power density of 2000 W/kg were obtained from the supercapacitor made from carbonized wood electrodes. The high performance of the supercapacitor was discovered to originate from the hierarchical porous structures of the carbonized wood. Finally, the fourth section of this dissertation is on the electrochemical effects of

  12. What people know about electronic devices: A descriptive study

    NASA Astrophysics Data System (ADS)

    Kieras, D. E.

    1982-10-01

    Informal descriptive results on the nature of people's natural knowledge of electronic devices are presented. Expert and nonexpert subjects were given an electronic device to examine and describe orally. The devices ranged from familiar everyday devices, to those familiar only to the expert, to unusual devices unfamiliar even to an expert. College students were asked to describe everyday devices from memory. The results suggest that device knowledge consists of the major categories of what the device is for, how it is used, its structure in terms of subdevices, its physical layout, how it works, and its behavior. A preliminary theoretical framework for device knowledge is that it consists of a hierarchy of schemas, corresponding to a hierarchial decomposition of the device into subdevices, with each level containing the major categories of information.

  13. Crosslinked polymeric dielectric materials and electronic devices incorporating same

    NASA Technical Reports Server (NTRS)

    Marks, Tobin J. (Inventor); Facchetti, Antonio (Inventor); Wang, Zhiming (Inventor); Choi, Hyuk-Jin (Inventor); Suh, legal representative, Nae-Jeong (Inventor)

    2012-01-01

    Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.

  14. Advanced Electronics Systems 1, Industrial Electronics 3: 9327.03.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    The 135 clock-hour course for the 12th year consists of outlines for blocks of instruction on transistor applications to basic circuits, principles of single sideband communications, maintenance practices, preparation for FCC licenses, application of circuits to advanced electronic systems, nonsinusoidal wave shapes, multivibrators, and blocking…

  15. "Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

    PubMed

    Irimia-Vladu, Mihai

    2014-01-21

    "Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

  16. Microscopy imaging device with advanced imaging properties

    SciTech Connect

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2015-11-24

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  17. Microscopy imaging device with advanced imaging properties

    DOEpatents

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2016-10-25

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  18. Overview of advanced law enforcement electronic technology

    NASA Astrophysics Data System (ADS)

    Harden, W. R.

    1995-05-01

    Law enforcement and security management are using advanced electronic equipment to increase the effectiveness and efficiency of the budget restricted police officer force. Currently there is also significant national attention concerning the possible utilization of 'military' electronic hardware to implement the much sought after 'force multiplier' which can help to alleviate each jurisdictions economic restrictions. However, as we are now finding, the transfer of 'military' hardware for utilization by law enforcement personnel is not as economically viable as hoped. This paper will address some of the recent advances in electronic technology that are being derived from the military technology base. Additionally, comments are given concerning the economic impact as the technology is transferred to the law enforcement community.

  19. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  20. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  1. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2006-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  2. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2007-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  3. Recent progress on thin-film encapsulation technologies for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  4. Ion age transport: developing devices beyond electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  5. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  6. Ultra-high-speed optical and electronic distributed devices

    SciTech Connect

    Hietala, V.M.; Plut, T.A.; Kravitz, S.H.; Vawter, G.A.; Wendt, J.R.; Armendariz, M.G.

    1995-08-01

    This report summarizes work on the development of ultra-high-speed semiconductor optical and electronic devices. High-speed operation is achieved by velocity matching the input stimulus to the output signal along the device`s length. Electronic devices such as field-effect transistors (FET`s), should experience significant speed increases by velocity matching the electrical input and output signals along the device. Likewise, optical devices, which are typically large, can obtain significant bandwidths by velocity matching the light being generated, detected or modulated with the electrical signal on the device`s electrodes. The devices discussed in this report utilize truly distributed electrical design based on slow-wave propagation to achieve velocity matching.

  7. Advanced fabrication technologies for nano-electronics

    SciTech Connect

    Simmons, J.A.; Weckwerth, M.V.; Baca, W.E.

    1996-03-01

    Three novel fabrication technologies are presented which greatly increase the tools available for the realization of nano-electronic devices. First, a sub-micron area post structure descending from a metallic airbridge allows gating of regions as small as 0.1 {mu}m in diameter. This has enabled the study of such quantum phenomena as coupling of parallel quantum point contacts, and electron focusing around a tunable quantum antidot. We also describe two new techniques for backgating multiquantum well structures with submicron lateral resolution. These techniques enable separate ohmic contacts to individual quantum wells spaced as closely as 100 {Angstrom}, and thus allow the fabrication of novel quantum tunneling devices. The first technique uses regrowth over a patterned ion-implanted substrate. The second involves a novel epoxy-bond-and-stop-etch (EBASE) processing scheme, whereby the original substrate is etched away and the backside then patterned using conventional methods.

  8. Advances in superconducting quantum electronic microcircuit fabrication

    NASA Technical Reports Server (NTRS)

    Kirschman, R. K.; Notarys, H. A.; Mercereau, J. E.

    1975-01-01

    Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.

  9. Prevention, Diagnosis, and Treatment of Cardiac Implantable Electronic Device Infections.

    PubMed

    Leung, Steven; Danik, Stephan

    2016-06-01

    Cardiac implantable electronic device (CIED) infections are complex medical problems that are increasingly encountered. They are associated with significant morbidity and mortality with tremendous economic cost. The current review will emphasize the prevention, diagnosis, and treatment of this clinical entity using the relatively limited evidence that is currently available. Because there is a paucity of high quality evidence regarding prevention, diagnosis, and treatment of CIED infections, this review will attempt to summarize the best evidence as well as to suggest, when possible, paradigms for care. The topic of CIED infections is a dynamic one as the scope of CIED continues to widen. Furthermore, there are promising advancements in CIED technology which may help reduce its occurrence the future. Unfortunately, significant gaps in knowledge remain, and definitive recommendations regarding CIED infections and future studies should be directed at improving our ability to prevent infections. PMID:27147510

  10. Questionable methods of cancer management: electronic devices.

    PubMed

    1994-01-01

    After careful study of the literature and other information available to it, the American Cancer Society has found no evidence that treatment with the devices mentioned in this review results in objective benefit in the treatment of cancer in human beings. Lacking such evidence, the American Cancer Society strongly urges individuals with cancer not to seek treatment with such devices. PMID:8124604

  11. Eliminating unwanted electrons in EBIS devices.

    PubMed

    Hershcovitch, Ady I

    2016-02-01

    In electron beam ion sources, step-wise ionization to high charge states is accomplished by magnetically confined electron beam. Electron space charge and high voltage electrodes confine the ions. The relativistic heavy ion collider (RHIC) ion source Debye length meets requirements for instabilities with free source of energy to grow. Electrons stripped from ions provide energy for a variety of microinstabilities to grow. Possible solution is to remove these electrons from the trap to a drift tube biased to higher voltage than the other tubes between the gate and the collector. If needed, a split drift tube for bleeding these electrons to ground is added. PMID:26931979

  12. Eliminating unwanted electrons in EBIS devices

    NASA Astrophysics Data System (ADS)

    Hershcovitch, Ady I.

    2016-02-01

    In electron beam ion sources, step-wise ionization to high charge states is accomplished by magnetically confined electron beam. Electron space charge and high voltage electrodes confine the ions. The relativistic heavy ion collider (RHIC) ion source Debye length meets requirements for instabilities with free source of energy to grow. Electrons stripped from ions provide energy for a variety of microinstabilities to grow. Possible solution is to remove these electrons from the trap to a drift tube biased to higher voltage than the other tubes between the gate and the collector. If needed, a split drift tube for bleeding these electrons to ground is added.

  13. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    PubMed

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  14. Ion age transport: developing devices beyond electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  15. Electronic spark advance-type ignition system

    SciTech Connect

    Koike, H.

    1986-12-09

    An electronic spark advance-type ignition system is described for an internal combustion engine comprising: an ignition coil; a magnetic pickup for generating a pair of pulse signals with a time interval therebetween substantially corresponding to a maximum advance angle in terms of crankshaft rotation degrees for each rotation of a crankshaft of the engine; signal generating means responsive to the pair of pulse signals for the pickup for generating a pair of comparison signals of different levels within each of the crankshaft rotation degrees of the maximum advance angle and the other crankshaft rotation degrees; and control means for comparing the signal levels of each of the pairs of comparison signals to generate an energization starting position signal and an ignition timing determining ignition position signal for the ignition coil, the signal generating means including means for controlling the waveform of one of the pair of comparison signals so that the ignition position signal is advanced in angle with respect to the energization starting position signal. The energization starting position signal is generated under all conditions prior to the timing of generation of the earlier one of the next pair of pulse signals generated from the pickup. The ignition position signal is generated within the maximum advance angle at a point in time following generation of the earlier one of the next pair of pulse signals by at least a predetermined amount.

  16. Advances in GaAs bistable optical devices

    NASA Astrophysics Data System (ADS)

    Jewell, J. L.; Tarng, S. S.; Gibbs, H. M.; Tai, K.; Weinberger, D. A.; Gossard, A. C.; McCall, S. L.; Passner, A.; Venkatesan, T. N. C.; Weigmann, W.

    1984-01-01

    Bistable optical devices (BOD's) using GaAs as the nonlinear medium are viable candidators for the achievement of fast ( ns), room temperature, low-power (mw), externally controllable optical switches which are easily fabricated and operated. Advances were made in all of these areas and efforts are in progress to improve performances in ways that are simultaneously compatible.

  17. Advanced thermal management technologies for defense electronics

    NASA Astrophysics Data System (ADS)

    Bloschock, Kristen P.; Bar-Cohen, Avram

    2012-05-01

    Thermal management technology plays a key role in the continuing miniaturization, performance improvements, and higher reliability of electronic systems. For the past decade, and particularly, the past 4 years, the Defense Advanced Research Projects Agency (DARPA) has aggressively pursued the application of micro- and nano-technology to reduce or remove thermal constraints on the performance of defense electronic systems. The DARPA Thermal Management Technologies (TMT) portfolio is comprised of five technical thrust areas: Thermal Ground Plane (TGP), Microtechnologies for Air-Cooled Exchangers (MACE), NanoThermal Interfaces (NTI), Active Cooling Modules (ACM), and Near Junction Thermal Transport (NJTT). An overview of the TMT program will be presented with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. The presentation will close with future challenges and opportunities in the thermal management of defense electronics.

  18. Fractal electronic devices: simulation and implementation.

    PubMed

    Fairbanks, M S; McCarthy, D N; Scott, S A; Brown, S A; Taylor, R P

    2011-09-01

    Many natural structures have fractal geometries that exhibit useful functional properties. These properties, which exploit the recurrence of patterns at increasingly small scales, are often desirable in applications and, consequently, fractal geometry is increasingly employed in diverse technologies ranging from radio antennae to storm barriers. In this paper, we explore the application of fractal geometry to electrical devices. First, we lay the foundations for the implementation of fractal devices by considering diffusion-limited aggregation (DLA) of atomic clusters. Under appropriate growth conditions, atomic clusters of various elements form fractal patterns driven by DLA. We perform a fractal analysis of both simulated and physical devices to determine their spatial scaling properties and demonstrate their potential as fractal circuit elements. Finally, we simulate conduction through idealized and DLA fractal devices and show that their fractal scaling properties generate novel, nonlinear conduction properties in response to depletion by electrostatic gates. PMID:21841218

  19. Fractal electronic devices: simulation and implementation

    NASA Astrophysics Data System (ADS)

    Fairbanks, M. S.; McCarthy, D. N.; Scott, S. A.; Brown, S. A.; Taylor, R. P.

    2011-09-01

    Many natural structures have fractal geometries that exhibit useful functional properties. These properties, which exploit the recurrence of patterns at increasingly small scales, are often desirable in applications and, consequently, fractal geometry is increasingly employed in diverse technologies ranging from radio antennae to storm barriers. In this paper, we explore the application of fractal geometry to electrical devices. First, we lay the foundations for the implementation of fractal devices by considering diffusion-limited aggregation (DLA) of atomic clusters. Under appropriate growth conditions, atomic clusters of various elements form fractal patterns driven by DLA. We perform a fractal analysis of both simulated and physical devices to determine their spatial scaling properties and demonstrate their potential as fractal circuit elements. Finally, we simulate conduction through idealized and DLA fractal devices and show that their fractal scaling properties generate novel, nonlinear conduction properties in response to depletion by electrostatic gates.

  20. Advances in positron and electron scattering*

    NASA Astrophysics Data System (ADS)

    Limão-Vieira, Paulo; García, Gustavo; Krishnakumar, E.; Petrović, Zoran; Sullivan, James; Tanuma, Hajime

    2016-10-01

    The topical issue on Advances in Positron and Electron Scattering" combines contributions from POSMOL 2015 together with others devoted to celebrate the unprecedented scientific careers of our loyal colleagues and trusted friends Steve Buckman (Australian National University, Australia) and Michael Allan (University of Fribourg, Switzerland) on the occasion of their retirements. POSMOL 2015, the XVIII International Workshop on Low-Energy Positron and Positronium Physics and the XIX International Symposium on Electron-Molecule Collisions and Swarms, was held at Universidade NOVA de Lisboa, Lisboa, Portugal, from 17-20 July 2015. The international workshop and symposium allowed to achieve a very privileged forum of sharing and developing our scientific expertise on current aspects of positron, positronium and antiproton interactions with electrons, atoms, molecules and solid surfaces, and related topics, as well as electron interactions with molecules in both gaseous and condensed phases. Particular topics include studies of electron interactions with biomolecules, electron induced surface chemistry and the study of plasma processes. Recent developments in the study of swarms are also fully addressed.

  1. Applications and Advances in Electronic-Nose Technologies

    PubMed Central

    Wilson, Alphus D.; Baietto, Manuela

    2009-01-01

    Electronic-nose devices have received considerable attention in the field of sensor technology during the past twenty years, largely due to the discovery of numerous applications derived from research in diverse fields of applied sciences. Recent applications of electronic nose technologies have come through advances in sensor design, material improvements, software innovations and progress in microcircuitry design and systems integration. The invention of many new e-nose sensor types and arrays, based on different detection principles and mechanisms, is closely correlated with the expansion of new applications. Electronic noses have provided a plethora of benefits to a variety of commercial industries, including the agricultural, biomedical, cosmetics, environmental, food, manufacturing, military, pharmaceutical, regulatory, and various scientific research fields. Advances have improved product attributes, uniformity, and consistency as a result of increases in quality control capabilities afforded by electronic-nose monitoring of all phases of industrial manufacturing processes. This paper is a review of the major electronic-nose technologies, developed since this specialized field was born and became prominent in the mid 1980s, and a summarization of some of the more important and useful applications that have been of greatest benefit to man. PMID:22346690

  2. Single-molecule electronics: from chemical design to functional devices.

    PubMed

    Sun, Lanlan; Diaz-Fernandez, Yuri A; Gschneidtner, Tina A; Westerlund, Fredrik; Lara-Avila, Samuel; Moth-Poulsen, Kasper

    2014-11-01

    The use of single molecules in electronics represents the next limit of miniaturisation of electronic devices, which would enable us to continue the trend of aggressive downscaling of silicon-based electronic devices. More significantly, the fabrication, understanding and control of fully functional circuits at the single-molecule level could also open up the possibility of using molecules as devices with novel, not-foreseen functionalities beyond complementary metal-oxide semiconductor technology (CMOS). This review aims at highlighting the chemical design and synthesis of single molecule devices as well as their electrical and structural characterization, including a historical overview and the developments during the last 5 years. We discuss experimental techniques for fabrication of single-molecule junctions, the potential application of single-molecule junctions as molecular switches, and general physical phenomena in single-molecule electronic devices.

  3. Medical Devices; Ophthalmic Devices; Classification of the Oral Electronic Vision Aid. Final order.

    PubMed

    2015-09-22

    The Food and Drug Administration (FDA) is classifying the oral electronic vision aid into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the oral electronic vision aid's classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device.

  4. The cardiac implantable electronic device power source: evolution and revolution.

    PubMed

    Mond, Harry G; Freitag, Gary

    2014-12-01

    Although the first power source for an implantable pacemaker was a rechargeable nickel-cadmium battery, it was rapidly replaced by an unreliable short-life zinc-mercury cell. This sustained the small pacemaker industry until the early 1970s, when the lithium-iodine cell became the dominant power source for low voltage, microampere current, single- and dual-chamber pacemakers. By the early 2000s, a number of significant advances were occurring with pacemaker technology which necessitated that the power source should now provide milliampere current for data logging, telemetric communication, and programming, as well as powering more complicated pacing devices such as biventricular pacemakers, treatment or prevention of atrial tachyarrhythmias, and the integration of innovative physiologic sensors. Because the current delivery of the lithium-iodine battery was inadequate for these functions, other lithium anode chemistries that can provide medium power were introduced. These include lithium-carbon monofluoride, lithium-manganese dioxide, and lithium-silver vanadium oxide/carbon mono-fluoride hybrids. In the early 1980s, the first implantable defibrillators for high voltage therapy used a lithium-vanadium pentoxide battery. With the introduction of the implantable cardioverter defibrillator, the reliable lithium-silver vanadium oxide became the power source. More recently, because of the demands of biventricular pacing, data logging, and telemetry, lithium-manganese dioxide and the hybrid lithium-silver vanadium oxide/carbon mono-fluoride laminate have also been used. Today all cardiac implantable electronic devices are powered by lithium anode batteries.

  5. Electron Beam Emission Characteristics from Plasma Focus Devices

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Patran, A.; Wong, D.; Hassan, S. M.; Springham, S. V.; Tan, T. L.; Lee, P.; Lee, S.; Rawat, R. S.

    2006-01-01

    In this paper we observed the characteristics of the electron beam emission from our plasma focus machine filling neon, argon, helium and hydrogen. Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal and energy distribution of electron emission. And the preliminary results of deposited FeCo thin film using electron beam from our plasma focus device were presented.

  6. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  7. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  8. Thermal electron-tunneling devices as coolers and amplifiers.

    PubMed

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-19

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs' chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  9. Thermal electron-tunneling devices as coolers and amplifiers

    PubMed Central

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-01-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices. PMID:26893109

  10. Thermal electron-tunneling devices as coolers and amplifiers

    NASA Astrophysics Data System (ADS)

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  11. Advanced electronics for the CTF MEG system.

    PubMed

    McCubbin, J; Vrba, J; Spear, P; McKenzie, D; Willis, R; Loewen, R; Robinson, S E; Fife, A A

    2004-11-30

    Development of the CTF MEG system has been advanced with the introduction of a computer processing cluster between the data acquisition electronics and the host computer. The advent of fast processors, memory, and network interfaces has made this innovation feasible for large data streams at high sampling rates. We have implemented tasks including anti-alias filter, sample rate decimation, higher gradient balancing, crosstalk correction, and optional filters with a cluster consisting of 4 dual Intel Xeon processors operating on up to 275 channel MEG systems at 12 kHz sample rate. The architecture is expandable with additional processors to implement advanced processing tasks which may include e.g., continuous head localization/motion correction, optional display filters, coherence calculations, or real time synthetic channels (via beamformer). We also describe an electronics configuration upgrade to provide operator console access to the peripheral interface features such as analog signal and trigger I/O. This allows remote location of the acoustically noisy electronics cabinet and fitting of the cabinet with doors for improved EMI shielding. Finally, we present the latest performance results available for the CTF 275 channel MEG system including an unshielded SEF (median nerve electrical stimulation) measurement enhanced by application of an adaptive beamformer technique (SAM) which allows recognition of the nominal 20-ms response in the unaveraged signal.

  12. Advanced electronics for the CTF MEG system.

    PubMed

    McCubbin, J; Vrba, J; Spear, P; McKenzie, D; Willis, R; Loewen, R; Robinson, S E; Fife, A A

    2004-01-01

    Development of the CTF MEG system has been advanced with the introduction of a computer processing cluster between the data acquisition electronics and the host computer. The advent of fast processors, memory, and network interfaces has made this innovation feasible for large data streams at high sampling rates. We have implemented tasks including anti-alias filter, sample rate decimation, higher gradient balancing, crosstalk correction, and optional filters with a cluster consisting of 4 dual Intel Xeon processors operating on up to 275 channel MEG systems at 12 kHz sample rate. The architecture is expandable with additional processors to implement advanced processing tasks which may include e.g., continuous head localization/motion correction, optional display filters, coherence calculations, or real time synthetic channels (via beamformer). We also describe an electronics configuration upgrade to provide operator console access to the peripheral interface features such as analog signal and trigger I/O. This allows remote location of the acoustically noisy electronics cabinet and fitting of the cabinet with doors for improved EMI shielding. Finally, we present the latest performance results available for the CTF 275 channel MEG system including an unshielded SEF (median nerve electrical stimulation) measurement enhanced by application of an adaptive beamformer technique (SAM) which allows recognition of the nominal 20-ms response in the unaveraged signal. PMID:16012695

  13. Statistical Modeling of Soi Devices for Low-Power Electronics.

    NASA Astrophysics Data System (ADS)

    Phelps, Mark Joseph

    1995-01-01

    This dissertation addresses the needs of low-power, large-scale integrated circuit device design, advanced materials technology, and computer simulation for statistical modeling. The main body of work comprises the creation and implementation of a software shell (STADIUM-SOI) that automates the application of statistics to commercial technology computer-aided design tools. The objective is to demonstrate that statistical design of experiments methodology can be employed for the advanced material technology of Silicon -On-Insulator (SOI) devices. The culmination of this effort was the successful modeling of the effect of manufacturing process variation on SOI device characteristics and the automation of this procedure.

  14. Are bioresorbable polylactate devices comparable to titanium devices for stabilizing Le Fort I advancement?

    PubMed

    Blakey, G H; Rossouw, E; Turvey, T A; Phillips, C; Proffit, W R; White, R P

    2014-04-01

    The purpose of this study was to evaluate whether skeletal and dental outcomes following Le Fort I surgery differed when stabilization was performed with polylactate bioresorbable devices or titanium devices. Fifty-seven patients with preoperative records and at least 1 year postoperative records were identified and grouped according to the stabilization method. All cephalometric X-rays were traced and digitized by a single operator. Analysis of covariance was used to compare the postsurgical change between the two stabilization methods. Twenty-seven patients received bioresorbable devices (group R), while 30 received titanium devices (group M). There were no statistically significant differences between the two groups with respect to gender, race/ethnicity, age, or dental and skeletal movements during surgery. Subtle postsurgical differences were noted, but were not statistically significant. Stabilization of Le Fort I advancement with polylactate bioresorbable and titanium devices produced similar clinical outcomes at 1 year following surgery.

  15. Advanced diesel electronic fuel injection and turbocharging

    NASA Astrophysics Data System (ADS)

    Beck, N. J.; Barkhimer, R. L.; Steinmeyer, D. C.; Kelly, J. E.

    1993-12-01

    The program investigated advanced diesel air charging and fuel injection systems to improve specific power, fuel economy, noise, exhaust emissions, and cold startability. The techniques explored included variable fuel injection rate shaping, variable injection timing, full-authority electronic engine control, turbo-compound cooling, regenerative air circulation as a cold start aid, and variable geometry turbocharging. A Servojet electronic fuel injection system was designed and manufactured for the Cummins VTA-903 engine. A special Servojet twin turbocharger exhaust system was also installed. A series of high speed combustion flame photos was taken using the single cylinder optical engine at Michigan Technological University. Various fuel injection rate shapes and nozzle configurations were evaluated. Single-cylinder bench tests were performed to evaluate regenerative inlet air heating techniques as an aid to cold starting. An exhaust-driven axial cooling air fan was manufactured and tested on the VTA-903 engine.

  16. Coulometry Experiments Using Simple Electronic Devices.

    ERIC Educational Resources Information Center

    Grimsrud, Eric; Amend, John

    1979-01-01

    Two experiments are presented which help to illustrate a modular approach to electrochemical instrument design, but which are readily understandable to students with a limited electronics background. The experiments are coulometric titration and controlled potential coulometry.

  17. Advanced photon source experience with vacuum chambers for insertion devices

    SciTech Connect

    Hartog, P.D.; Grimmer, J.; Xu, S.; Trakhtenberg, E.; Wiemerslage, G.

    1997-08-01

    During the last five years, a new approach to the design and fabrication of extruded aluminum vacuum chambers for insertion devices was developed at the Advanced Photon Source (APS). With this approach, three different versions of the vacuum chamber, with vertical apertures of 12 mm, 8 mm, and 5 mm, were manufactured and tested. Twenty chambers were installed into the APS vacuum system. All have operated with beam, and 16 have been coupled with insertion devices. Two different vacuum chambers with vertical apertures of 16 mm and 11 mm were developed for the BESSY-II storage ring and 3 of 16 mm chambers were manufactured.

  18. Advanced Sensor Fish Device for ImprovedTurbine Design

    SciTech Connect

    Carlson, Thomas J.

    2009-09-14

    Juvenile salmon (smolts) passing through hydroelectric turbines are subjected to environmental conditions that can potentially kill or injure them. Many turbines are reaching the end of their operational life expectancies and will be replaced with new turbines that incorporate advanced “fish friendly” designs devised to prevent injury and death to fish. To design a fish friendly turbine, it is first necessary to define the current conditions fish encounter. One such device used by biologists at Pacific Northwest National Laboratory was the sensor fish device to collect data that measures the forces fish experience during passage through hydroelectric projects.

  19. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  20. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  1. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  2. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  3. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  4. Programmable synaptic devices for electronic neural nets

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Thakoor, A. P.

    1990-01-01

    The architecture, design, and operational characteristics of custom VLSI and thin film synaptic devices are described. The devices include CMOS-based synaptic chips containing 1024 reprogrammable synapses with a 6-bit dynamic range, and nonvolatile, write-once, binary synaptic arrays based on memory switching in hydrogenated amorphous silicon films. Their suitability for embodiment of fully parallel and analog neural hardware is discussed. Specifically, a neural network solution to an assignment problem of combinatorial global optimization, implemented in fully parallel hardware using the synaptic chips, is described. The network's ability to provide optimal and near optimal solutions over a time scale of few neuron time constants has been demonstrated and suggests a speedup improvement of several orders of magnitude over conventional search methods.

  5. Holmium hafnate: An emerging electronic device material

    SciTech Connect

    Pavunny, Shojan P. E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S. E-mail: rkatiyar@hpcf.upr.edu; Scott, James F.

    2015-03-16

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  6. Holmium hafnate: An emerging electronic device material

    NASA Astrophysics Data System (ADS)

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

    2015-03-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  7. Simulation of electron transport in quantum well devices

    NASA Technical Reports Server (NTRS)

    Miller, D. R.; Gullapalli, K. K.; Reddy, V. R.; Neikirk, D. P.

    1992-01-01

    Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

  8. Are Electronic Cardiac Devices Still Evolving?

    PubMed Central

    Mabo, P.

    2014-01-01

    Summary Objectives The goal of this paper is to review some important issues occurring during the past year in Implantable devices. Methods First cardiac implantable device was proposed to maintain an adequate heart rate, either because the heart’s natural pacemaker is not fast enough, or there is a block in the heart’s electrical conduction system. During the last forty years, pacemakers have evolved considerably and become programmable and allow to configure specific patient optimum pacing modes. Various technological aspects (electrodes, connectors, algorithms diagnosis, therapies, …) have been progressed and cardiac implants address several clinical applications: management of arrhythmias, cardioversion / defibrillation and cardiac resynchronization therapy. Results Observed progress was the miniaturization of device, increased longevity, coupled with efficient pacing functions, multisite pacing modes, leadless pacing and also a better recognition of supraventricular or ventricular tachycardia’s in order to deliver appropriate therapy. Subcutaneous implant, new modes of stimulation (leadless implant or ultrasound lead), quadripolar lead and new sensor or new algorithm for the hemodynamic management are introduced and briefly described. Each times, the main result occurring during the two past years are underlined and repositioned from the history, remaining limitations are also addressed. Conclusion Some important technological improvements were described. Nevertheless, news trends for the future are also considered in a specific session such as the remote follow-up of the patient or the treatment of heart failure by neuromodulation. PMID:25123732

  9. Inventory Control. Easily Made Electronic Device for Conductivity Experiments.

    ERIC Educational Resources Information Center

    Gadek, Frank J.

    1987-01-01

    Describes how to construct an electronic device to be used in conductivity experiments using a 35 millimeter film canister, nine volt battery replacement snaps, a 200-300 ohm resistor, and a light-emitting diode. Provides a diagram and photographs of the device. (TW)

  10. 75 FR 45696 - Pipeline Safety: Personal Electronic Device Related Distractions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-03

    ... Electronic Devices, 75 FR 9754, May 18, 2010; Limiting the Use of Wireless Communication Devices, 75 FR 16391... distractions caused by the use of PEDs. Such distractions may also hinder their prompt recognition and reaction... distractions caused by the use of PEDs. Such distractions may also hinder their prompt recognition and...

  11. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Barron, Carole C.; Fleming, James G.; Montague, Stephen

    1999-01-01

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

  12. Consolidated electron emission effects in an IEC device

    NASA Astrophysics Data System (ADS)

    Krupakar Murali, S.; Santarius, John F.; Kulcinski, Gerald L.

    2010-08-01

    Gridded inertial electrostatic confinement (IEC) devices are of interest to the research community for their multiple near-term applications. The number of applications of an IEC device increases with increasing fusion reaction rate. However, all attempts to improve the fusion reactivity of the IEC device have resulted in a linear or less than linear response with the power supply current. This work is geared toward determining the reasons for the observed response of the IEC device. Such an understanding would help formulate new ways to improve the efficiency of the device. Experiments were conducted with single loop grids built from different materials (Re and W25%Re) to study the electron emission from the cathode in an IEC device. A single loop grid produces a (~line) cylindrical fusion source and was used to study the electron emission from cathode. Electron emission from the cathode increases non-linearly due to the presence of multiple sources (secondary electron emission, field emission and photoemission), as a result of which the ion current increases in a less than linear fashion with the power supply current. The ion recirculation current equation has been updated to accommodate various electron contributions. Several techniques to mitigate the electron emission from the cathode are suggested in this paper.

  13. Printed Electronic Devices in Human Spaceflight

    NASA Technical Reports Server (NTRS)

    Bacon, John B.

    2004-01-01

    The space environment requires robust sensing, control, and automation, whether in support of human spaceflight or of robotic exploration. Spaceflight embodies the known extremes of temperature, radiation, shock, vibration, and static loads, and demands high reliability at the lowest possible mass. Because printed electronic circuits fulfill all these requirements, printed circuit technology and the exploration of space have been closely coupled throughout their short histories. In this presentation, we will explore the space (and space launch) environments as drivers of printed circuit design, a brief history of NASA's use of printed electronic circuits, and we will examine future requirements for such circuits in our continued exploration of space.

  14. Advanced Power Electronics and Electric Motors Annual Report -- 2013

    SciTech Connect

    Narumanchi, S.; Bennion, K.; DeVoto, D.; Moreno, G.; Rugh, J.; Waye, S.

    2015-01-01

    This report describes the research into advanced liquid cooling, integrated power module cooling, high temperature air cooled power electronics, two-phase cooling for power electronics, and electric motor thermal management by NREL's Power Electronics group in FY13.

  15. Electronic 4-wheel drive control device

    NASA Technical Reports Server (NTRS)

    Hayato, S.; Takanori, S.; Shigeru, H.; Tatsunori, S.

    1984-01-01

    The internal rotation torque generated during operation of a 4-wheel drive vehicle is reduced using a control device whose clutch is attached to one part of the rear-wheel drive shaft. One torque sensor senses the drive torque associated with the rear wheel drive shaft. A second sensor senses the drive torque associated with the front wheel drive shaft. Revolution count sensors sense the revolutions of each drive shaft. By means of a microcomputer, the engagement of the clutch is changed to insure that the ratio of the torque sensors remains constant.

  16. Electron waves resonance properties in superdimensional microwave Cherenkov devices

    SciTech Connect

    Chernyavsky, I.A.; Pikunov, V.M.

    1995-11-01

    The electron waves resonance properties in the one-stage and two-stage microwave Cherenkov devices based on the superdimensional slow-wave structures are investigated by the linear theory methods near {pi}-cutoff of E{sub 01} waveguide mode. The variation of the generation frequencies and it`s starting currents, when diode voltage changes in a wide range of value, are investigated. concept of a longitudinal electron oscillations (LEO) is defined for a one-stage device. The dependencies of the generation frequency and starting current versus the drift tube length are investigated for the two-stage device in detail.

  17. Porous graphene materials for advanced electrochemical energy storage and conversion devices.

    PubMed

    Han, Sheng; Wu, Dongqing; Li, Shuang; Zhang, Fan; Feng, Xinliang

    2014-02-12

    Combining the advantages from both porous materials and graphene, porous graphene materials have attracted vast interests due to their large surface areas, unique porous structures, diversified compositions and excellent electronic conductivity. These unordinary features enable porous graphene materials to serve as key components in high-performance electrochemical energy storage and conversion devices such as lithium ion batteries, supercapacitors, and fuel cells. This progress report summarizes the typical fabrication methods for porous graphene materials with micro-, meso-, and macro-porous structures. The structure-property relationships of these materials and their application in advanced electrochemical devices are also discussed.

  18. Weak localization and electron-electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (˜T -0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.

  19. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  20. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  1. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  2. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  3. Incorporating Ethical Consumption into Electronic Device Acquisition: A Proposal

    ERIC Educational Resources Information Center

    Poggiali, Jennifer

    2016-01-01

    This essay proposes that librarians practice ethical consumption when purchasing electronic devices. Though librarians have long been engaged with environmentalism and social justice, few have suggested that such issues as e-waste and sweatshop labor should impact our decisions to acquire e-readers, tablets, and other electronics. This article…

  4. Graphene gate electrode for MOS structure-based electronic devices.

    PubMed

    Park, Jong Kyung; Song, Seung Min; Mun, Jeong Hun; Cho, Byung Jin

    2011-12-14

    We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the quantum mechanical tunneling current from the gate electrode. This concept is applied to nonvolatile Flash memory devices, whose performance is critically affected by the quality of the gate dielectric. Charge-trap flash (CTF) memory with a graphene gate electrode shows superior data retention and program/erase performance that current CTF devices cannot achieve. The findings of this study can lead to new applications of graphene, not only for Flash memory devices but also for other high-performance and mass-producible electronic devices based on MOS structure which is the mainstream of the electronic device industry.

  5. Flexible and stretchable electronics for wearable healthcare devices and minimally invasive surgical tools

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeong; Lee, Mincheol; Lee, Hyunjae

    2016-05-01

    Recent advances in soft electronics have attracted great attention, largely due to their potential applications in personalized, bio-integrated healthcare devices. The mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs have presented many challenges, such as the low signalto- noise ratio of biosensors because of the incomplete integration of rigid devices with the body, inflammation and excessive immune responses of implanted stiff devices originated from friction and their foreign nature to biotic systems, and the considerable discomfort and consequent stress experienced by users when wearing/implanting these devices. Ultra-flexible and stretchable electronic devices are being highlighted due to their low system modulus and the intrinsic system-level softness that are important to solve these issues. Here, we describe our unique strategies for the nanomaterial synthesis and fabrication, their seamless assembly and integration, and the design and development of corresponding wearable healthcare devices and minimally invasive surgical tools. These bioelectronic systems fully utilize recent breakthroughs in unconventional soft electronics based on nanomaterials to address unsolved issues in clinical medicine and to provide new opportunities in the personalized healthcare.

  6. 77 FR 44671 - Certain Wireless Consumer Electronics Devices and Components Thereof; Notice of Receipt of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-30

    ... COMMISSION Certain Wireless Consumer Electronics Devices and Components Thereof; Notice of Receipt of... received a complaint entitled Certain Wireless Consumer Electronics Devices and Components Thereof, DN 2904... within the United States after importation of certain wireless consumer electronics devices...

  7. 77 FR 51572 - Certain Wireless Consumer Electronics Devices and Components Thereof; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-24

    ... COMMISSION Certain Wireless Consumer Electronics Devices and Components Thereof; Institution of Investigation... United States after importation of certain wireless consumer electronics devices and components thereof... importation of certain wireless consumer electronics devices and components thereof that infringe one or...

  8. 78 FR 38361 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-26

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof... States after importation of certain portable electronic ] communications devices, including mobile phones... importation of certain portable electronic communications devices, including mobile phones and...

  9. 77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-08

    ... COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... Trade Commission has received a complaint entitled Certain Electronic Devices, Including Mobile Phones... electronic devices, including mobile phones and tablet computers, and components thereof. The complaint...

  10. 76 FR 22918 - In the Matter of Certain Handheld Electronic Computing Devices, Related Software, and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-25

    ... COMMISSION In the Matter of Certain Handheld Electronic Computing Devices, Related Software, and Components... States after importation of certain handheld electronic computing devices, related software, and... importation of certain handheld electronic computing devices, related software, and components thereof...

  11. 78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-19

    ... America, LLC of Richardson, Texas (collectively, ``Samsung''). 76 FR 45860 (Aug. 1, 2011). The complaint... Commission, and on the issues of remedy, the public interest, and bonding. 77 FR 70464. The Commission... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and...

  12. Transition metal oxides for organic electronics: energetics, device physics and applications.

    PubMed

    Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

    2012-10-23

    During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed.

  13. Transition metal oxides for organic electronics: energetics, device physics and applications.

    PubMed

    Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

    2012-10-23

    During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed. PMID:22945550

  14. Multiscale quantum mechanics/electromagnetics simulation for electronic devices.

    PubMed

    Yam, ChiYung; Meng, Lingyi; Chen, GuanHua; Chen, Quan; Wong, Ngai

    2011-08-28

    The continuous downsizing of modern electronic devices implies the increasing importance of quantum phenomena. As the feature sizes of transistors inch towards 10 nanometer, simulations including quantum effects and atomistic details are inevitable. Here we report a novel hybrid quantum mechanics and electromagnetics (QM/EM) method to model individual electronic components at the nanoscale. QM and EM models are solved in different regions of the system in a self-consistent manner. As a demonstration, we study a carbon nanotube based electronic device embedded in a silicon block. Good agreement is obtained between simulation by QM/EM method and full QM treatment of the entire system.

  15. Recent Power Quality Technology Employing Power Electronics Devices

    NASA Astrophysics Data System (ADS)

    Takasaki, Masahiro

    Power quality has become a common concern of customers and utilities in improving respective profits in the context of an open electricity market. Power electronics is the essential technology to control power quality in accordance with customer requirements and utility standards. This paper first summarizes power quality definitions and indices used in IEEE and IEC standards. It clarifies the problem to be solved and the role of power electronics devices. Then the overview of power quality control methods and equipments employing power electronics devices is explained. The control methodology discussed in this paper includes various schemes of future distribution and power supply system now under development.

  16. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  17. Aquatic toxicity of leachates generated from electronic devices.

    PubMed

    Dagan, Roi; Dubey, Brajesh; Bitton, Gabriel; Townsend, Timothy

    2007-08-01

    Heavy metal leaching of electronic waste has been documented in recent literature. Heavy metal aquatic toxicity in the toxicity characteristic (TC) leachates produced from 56 electronic devices were tested using the aquatic toxicity assays such as Ceriodaphnia dubia 48-hr acute toxicity assay, the Selenatastrum capricornutum chronic algal growth inhibition assay (test used only for circuit-board leachates), and the MetPLATE acute heavy metal toxicity tests. The electronic devices tested, include 9 circuit boards (printed wire boards), 2 videocassette recorders, 4 remote controls, 1 cathode ray tube, 15 cellular phones, 1 calculator, 5 smoke detectors and their PC board components, 3 printers, 4 laptop computers, and 7 personal computer central processing units (CPUs). The toxicity tests showed toxicity in 51 of the 56 Toxicity Characteristic Leaching Procedure leachates of electronic devices assayed.

  18. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  19. The cardiac implantable electronic device power source: evolution and revolution.

    PubMed

    Mond, Harry G; Freitag, Gary

    2014-12-01

    Although the first power source for an implantable pacemaker was a rechargeable nickel-cadmium battery, it was rapidly replaced by an unreliable short-life zinc-mercury cell. This sustained the small pacemaker industry until the early 1970s, when the lithium-iodine cell became the dominant power source for low voltage, microampere current, single- and dual-chamber pacemakers. By the early 2000s, a number of significant advances were occurring with pacemaker technology which necessitated that the power source should now provide milliampere current for data logging, telemetric communication, and programming, as well as powering more complicated pacing devices such as biventricular pacemakers, treatment or prevention of atrial tachyarrhythmias, and the integration of innovative physiologic sensors. Because the current delivery of the lithium-iodine battery was inadequate for these functions, other lithium anode chemistries that can provide medium power were introduced. These include lithium-carbon monofluoride, lithium-manganese dioxide, and lithium-silver vanadium oxide/carbon mono-fluoride hybrids. In the early 1980s, the first implantable defibrillators for high voltage therapy used a lithium-vanadium pentoxide battery. With the introduction of the implantable cardioverter defibrillator, the reliable lithium-silver vanadium oxide became the power source. More recently, because of the demands of biventricular pacing, data logging, and telemetry, lithium-manganese dioxide and the hybrid lithium-silver vanadium oxide/carbon mono-fluoride laminate have also been used. Today all cardiac implantable electronic devices are powered by lithium anode batteries. PMID:25387600

  20. VME insertion device control at the Advanced Photon Source

    NASA Astrophysics Data System (ADS)

    Smith, M.; Ramanathan, M.; Grimmer, J.; Merritt, M.

    2002-03-01

    The Advanced Photon Source (APS) currently has 29 insertion devices (IDs) installed and operating. The need to remotely diagnose and correct problems has become increasingly important. This has been accomplished through the development of a new control system with greatly enhanced input/output (I/O) capabilities specifically targeted to this control task. The system features a custom VME control card and three rack-mounted interface chassis for ID control, encoder interface, and motor drive shutdown. The card provides device interlocks, limit switch logic, motor axis selection, digital I/O, and status feedback. This VME insertion device control was designed to operate with an eight-axis intelligent motor controller and a stepper-motor drive that accepts step and direction inputs. The front panel of the card has two connectors for all of the control signals for the stepper-motor drives. There is a third connector for the ID limit switch inputs and the emergency stop circuit, and a fourth connector provides 23 bits of digital outputs and 16 bits of digital inputs. Light-emitting diodes indicate which motions are inhibited by the limit switch logic. An experimental physics industrial control system (EPICS) (http://www.APS.ANL-GOV/EPICS) device driver was developed to access all the registers on the VME control card. Using standard EPICS records, the insertion device status can be viewed remotely. This minimizes downtime for APS ID beamline users by allowing faster resolution of any problems preventing a user from operating the insertion device. This new insertion device control has been in use at the APS since July of 1999. The design features of the control system and rationale for them will be presented, along with our experience in building, testing, installing, and operating the control system.

  1. dc-plasma-sprayed electronic-tube device

    DOEpatents

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  2. MovAid- a novel device for advanced rehabilitation monitoring.

    PubMed

    Gupta, Prashant; Verma, Piyush; Gupta, Rakesh; Verma, Bhawna

    2015-08-01

    The present article introduces a new device "MovAid" which helps to measure and monitor rehabilitation. It has two main components- "MovAid device" and the "MovAid Smart Phone Application". The device connects wirelessly to the MovAid smart phone application via Bluetooth. It has electronic sensors to measure three important parameters of the patient- Angle of Joint Bent, Lift from the ground and Orientation of the limb. A mono-axis flex sensor to measure the degree of joint bent and a 3-axis accelerometer and gyroscope to measure the orientation of the limb and lift from the ground have been used. MovAid system bridges the gap between caretakers and patients, empowering both in ways never thought of before, by providing detailed and accurate data on every move. PMID:26737332

  3. Perioperative Management of Multiple Noncardiac Implantable Electronic Devices.

    PubMed

    Ramos, Juan A; Brull, Sorin J

    2015-12-01

    The number of patients with noncardiac implantable electronic devices is increasing, and the absence of perioperative management standards, guidelines, practice parameters, or expert consensus statements presents clinical challenges. A 69-year-old woman presented for latissimus dorsi breast reconstruction. The patient had previously undergone implantation of a spinal cord stimulator, a gastric pacemaker, a sacral nerve stimulator, and an intrathecal morphine pump. After consultation with device manufacturers, the devices with patient programmability were switched off. Bipolar cautery was used intraoperatively. Postoperatively, all devices were interrogated to ensure appropriate functioning before home discharge. Perioperative goals include complete preoperative radiologic documentation of device component location, minimizing electromagnetic interference, and avoiding mechanical damage to implanted device components.

  4. Perioperative Management of Multiple Noncardiac Implantable Electronic Devices.

    PubMed

    Ramos, Juan A; Brull, Sorin J

    2015-12-01

    The number of patients with noncardiac implantable electronic devices is increasing, and the absence of perioperative management standards, guidelines, practice parameters, or expert consensus statements presents clinical challenges. A 69-year-old woman presented for latissimus dorsi breast reconstruction. The patient had previously undergone implantation of a spinal cord stimulator, a gastric pacemaker, a sacral nerve stimulator, and an intrathecal morphine pump. After consultation with device manufacturers, the devices with patient programmability were switched off. Bipolar cautery was used intraoperatively. Postoperatively, all devices were interrogated to ensure appropriate functioning before home discharge. Perioperative goals include complete preoperative radiologic documentation of device component location, minimizing electromagnetic interference, and avoiding mechanical damage to implanted device components. PMID:26588030

  5. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures. PMID:26856789

  6. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures.

  7. Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

    NASA Astrophysics Data System (ADS)

    Radauscher, Erich Justin

    Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing

  8. Advanced Electronic Systems. Curriculum Guide for Technology Education.

    ERIC Educational Resources Information Center

    Patrick, Dale R.

    This curriculum for a 1-semester or 1-year course in electronics is designed to take students from basic through advanced electronic systems. It covers several electronic areas, such as digital electronics, communication electronics, industrial process control, instrumentation, programmable controllers, and robotics. The guide contains…

  9. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  12. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  13. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  14. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  15. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  16. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    PubMed

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

  17. Axial Electron Heat Loss From Mirror Devices Revisited

    SciTech Connect

    Ryutov, D

    2004-08-16

    An issue of the axial electron heat loss is of a significant importance for mirror-based fusion devices. This problem has been considered in a number of publications but it is still shrouded in misconceptions. In this paper we revisit it once again. We discuss the following issues: (1) Formation of the electron distribution function in the end tank at large expansion ratios; (2) The secondary emission from the end plates and the ways of suppressing it (if needed); (3) Ionization and charge exchange in the presence of neutrals in the end tanks; (4) Instabilities caused by the peculiar shape of the electron distribution function and their possible impact on the electron heat losses; (5) Electron heat losses in the pulsed mode of operation of mirror devices.

  18. Axial Electron Heat Loss from Mirror Devices Revisited

    SciTech Connect

    Ryutov, D.D.

    2005-01-15

    An issue of the axial electron heat loss is of a significant importance for mirror-based fusion devices. This problem has been considered in a number of publications but it is still shrouded in misconceptions. In this paper we revisit it once again. We discuss the following issues: 1) Formation of the electron distribution function in the end tank at large expansion ratios; 2) The secondary emission from the end plates and the ways of suppressing it (if needed); 3) Ionization and charge exchange in the presence of neutrals in the end tanks; 4) Instabilities caused by the peculiar shape of the electron distribution function and their possible impact on the electron heat losses; 5) Electron heat losses in the pulsed mode of operation of mirror devices.

  19. A perspective on RF vacuum electronics: Innovations and recent advances

    SciTech Connect

    Parker, R.K.

    1995-12-31

    Vacuum electronics continues as a vital technology for the generation of coherent radiation in a spectral region extending from the UHF to the infrared. The veritable explosion in this field that occurred in the 1950s and the early 1960s established an effective microwave power tube technology that remains as the basic building block for a wide range of RF transmission and power applications. Drawing on ideas and techniques from relativistic and pulsed power electronics, a resurgence in research began in the mid-1970s that resulted in new capabilities at high frequency and extreme levels of peak power. More recently, solid-state and vacuum electronic interests have converged to create a new technology, vacuum micro-electronics, that promises to yield competitive new products at lower frequency and more moderate power. Many of the advances and innovations from current R and D efforts are associated with two primary technological thrusts. First is the continuing development of fast-wave device concepts for use in heating, particle accelerations, and RF power transmission. The second thrust is defined by the creative blending of solid-state and vacuum concepts, techniques and capabilities. The microwave power module, a new transmitter archetype, highlights the benefits of this approach.

  20. A Novel Device for Intravaginal Electronic Brachytherapy

    SciTech Connect

    Schneider, Frank Fuchs, Holger; Lorenz, Friedlieb; Steil, Volker; Ziglio, Francesco; Kraus-Tiefenbacher, Uta; Lohr, Frank; Wenz, Frederik

    2009-07-15

    Purpose: Postoperative intravaginal brachytherapy for endometrial carcinoma is usually performed with {sup 192}Ir high-dose rate (HDR) afterloading. A potential alternative is treatment with a broadband 50kV X-ray point source, the advantage being its low energy and the consequential steep dose gradient. The aim of this study was to create and evaluate a homogeneous cylindrical energy deposition around a newly designed vaginal applicator. Methods and Materials: To create constant isodose layers along the cylindrical plastic vaginal applicator, the source (INTRABEAM system) was moved in steps of 17-19.5 mm outward from the tip of the applicator. Irradiation for a predetermined time was performed at each position. The axial shift was established by a stepping mechanism that was mounted on a table support. The total dose/dose distribution was determined using film dosimetry (Gafchromic EBT) in a 'solid water' phantom. The films were evaluated with Mathematica 5.2 and OmniPro-I'mRT 1.6. The results (dose D0/D5/D10 in 0/5/10 mm tissue depth) were compared with an {sup 192}Ir HDR afterloading plan for multiple sampling points around the applicator. Results: Three different dose distributions with lengths of 3.9-7.3 cm were created. The irradiation time based on the delivery of 5/7 Gy to a 5 mm tissue depth was 19/26 min to 27/38 min. D0/D5/D10 was 150%/100%/67% for electronic brachytherapy and 140%/100%/74% for the afterloading technique. The deviation for repeated measurements in the phantom was <7%. Conclusions: It is possible to create a homogeneous cylindrical dose distribution, similar to {sup 192}Ir HDR afterloading, through the superimposition of multiple spherical dose distributions by stepping a kilovolt point source.

  1. Advanced electron microscopy characterization of multimetallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Khanal, Subarna Raj

    Research in noble metal nanoparticles has led to exciting progress in a versatile array of applications. For the purpose of better tailoring of nanoparticles activities and understanding the correlation between their structures and properties, control over the composition, shape, size and architecture of bimetallic and multimetallic nanomaterials plays an important role on revealing their new or enhanced functions for potentials application. Advance electron microscopy techniques were used to provide atomic scale insights into the structure-properties of different materials: PtPd, Au-Au3Cu, Cu-Pt, AgPd/Pt and AuCu/Pt nanoparticles. The objective of this work is to understand the physical and chemical properties of nanomaterials and describe synthesis, characterization, surface properties and growth mechanism of various bimetallic and multimetallic nanoparticles. The findings have provided us with novel and significant insights into the physical and chemical properties of noble metal nanoparticles. Different synthesis routes allowed us to synthesize bimetallic: Pt-Pd, Au-Au3Cu, Cu-Pt and trimetallic: AgPd/Pt, AuCu/Pt, core-shell and alloyed nanoparticles with monodispersed sizes, controlled shapes and tunable surface properties. For example, we have synthesized the polyhedral PtPd core-shell nanoparticles with octahedral, decahedral, and triangular plates. Decahedral PtPd core-shell structures are novel morphologies for this system. For the first time we fabricated that the Au core and Au3Cu alloyed shell nanoparticles passivated with CuS2 surface layers and characterized by Cs-corrected scanning transmission electron microscopy. The analysis of the high-resolution micrographs reveals that these nanoparticles have decahedral structure with shell periodicity, and that each of the particles is composed by Au core and Au3Cu ordered superlattice alloyed shell surrounded by CuS 2 surface layer. Additionally, we have described both experimental and theoretical methods of

  2. Inverted organic photovoltaic device with a new electron transport layer

    PubMed Central

    2014-01-01

    We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air. PMID:24674457

  3. Electronic firing systems and methods for firing a device

    SciTech Connect

    Frickey, Steven J.; Svoboda, John M.

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  4. Advanced Power Electronics for LED Drivers: Advanced Technologies for integrated Power Electronics

    SciTech Connect

    2010-09-01

    ADEPT Project: MIT is teaming with Georgia Institute of Technology, Dartmouth College, and the University of Pennsylvania (UPenn) to create more efficient power circuits for energy-efficient light-emitting diodes (LEDs) through advances in 3 related areas. First, the team is using semiconductors made of high-performing gallium nitride grown on a low-cost silicon base (GaN-on-Si). These GaN-on-Si semiconductors conduct electricity more efficiently than traditional silicon semiconductors. Second, the team is developing new magnetic materials and structures to reduce the size and increase the efficiency of an important LED power component, the inductor. This advancement is important because magnetics are the largest and most expensive part of a circuit. Finally, the team is creating an entirely new circuit design to optimize the performance of the new semiconductors and magnetic devices it is using.

  5. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique.

    PubMed

    Chen, J; Yuan, X; Sekiguchi, T

    2008-01-01

    We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique. By varying the parameters such as temperature, accelerating voltage (V(acc)), bias voltage, and stressing time, it is possible to extend EBIC application from conventional defect characterization to advanced device diagnosis. As an electron beam can excite a certain volume even beneath the surface passive layer, EBIC can be effectively employed to diagnose complicated devices with hybrid structure. Three topics were selected to demonstrate EBIC applications. First, the recombination activities of grain boundaries and their interaction with Fe impurity in photovoltaic multicrystalline Si (mc-Si) are clarified by temperature-dependent EBIC. Second, the detection of dislocations between strained-Si and SiGe virtual substrate are shown to overcome the limitation of depletion region. Third, the observation of leakage sites in high-k gate dielectric is demonstrated for the characterization of advanced hybrid device structures.

  6. Study on the frequency characteristics of nanogap electron devices

    SciTech Connect

    Xu, Ji; Wang, Qilong E-mail: bell@seu.edu.cn; Qi, Zhiyang; Zhai, Yusheng; Zhang, Xiaobing E-mail: bell@seu.edu.cn

    2015-05-28

    Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.

  7. Recent advances in medical device triage technologies for chemical, biological, radiological, and nuclear events.

    PubMed

    Lansdowne, Krystal; Scully, Christopher G; Galeotti, Loriano; Schwartz, Suzanne; Marcozzi, David; Strauss, David G

    2015-06-01

    In 2010, the US Food and Drug Administration (Silver Spring, Maryland USA) created the Medical Countermeasures Initiative with the mission of development and promoting medical countermeasures that would be needed to protect the nation from identified, high-priority chemical, biological, radiological, or nuclear (CBRN) threats and emerging infectious diseases. The aim of this review was to promote regulatory science research of medical devices and to analyze how the devices can be employed in different CBRN scenarios. Triage in CBRN scenarios presents unique challenges for first responders because the effects of CBRN agents and the clinical presentations of casualties at each triage stage can vary. The uniqueness of a CBRN event can render standard patient monitoring medical device and conventional triage algorithms ineffective. Despite the challenges, there have been recent advances in CBRN triage technology that include: novel technologies; mobile medical applications ("medical apps") for CBRN disasters; electronic triage tags, such as eTriage; diagnostic field devices, such as the Joint Biological Agent Identification System; and decision support systems, such as the Chemical Hazards Emergency Medical Management Intelligent Syndromes Tool (CHEMM-IST). Further research and medical device validation can help to advance prehospital triage technology for CBRN events.

  8. Recent advances in medical device triage technologies for chemical, biological, radiological, and nuclear events.

    PubMed

    Lansdowne, Krystal; Scully, Christopher G; Galeotti, Loriano; Schwartz, Suzanne; Marcozzi, David; Strauss, David G

    2015-06-01

    In 2010, the US Food and Drug Administration (Silver Spring, Maryland USA) created the Medical Countermeasures Initiative with the mission of development and promoting medical countermeasures that would be needed to protect the nation from identified, high-priority chemical, biological, radiological, or nuclear (CBRN) threats and emerging infectious diseases. The aim of this review was to promote regulatory science research of medical devices and to analyze how the devices can be employed in different CBRN scenarios. Triage in CBRN scenarios presents unique challenges for first responders because the effects of CBRN agents and the clinical presentations of casualties at each triage stage can vary. The uniqueness of a CBRN event can render standard patient monitoring medical device and conventional triage algorithms ineffective. Despite the challenges, there have been recent advances in CBRN triage technology that include: novel technologies; mobile medical applications ("medical apps") for CBRN disasters; electronic triage tags, such as eTriage; diagnostic field devices, such as the Joint Biological Agent Identification System; and decision support systems, such as the Chemical Hazards Emergency Medical Management Intelligent Syndromes Tool (CHEMM-IST). Further research and medical device validation can help to advance prehospital triage technology for CBRN events. PMID:25868677

  9. New bio-inorganic photo-electronic devices based on photosynthetic proteins

    NASA Astrophysics Data System (ADS)

    Lebedev, Nikolai; Spano, Anthony; Trammell, Scott; Griva, Igor; Tsoi, Stanislav; Schnur, Joel M.

    2007-09-01

    Construction of efficient devices for light energy conversion, including photo-electronic and photovoltaic (PV) devices, is a big challenge for the current science and technology that will have important economic consequences. Most of the modern photovoltaic devices are based on silicon. An innovative approach to the construction of photovoltaic devices is the utilization of biological systems and principles designed for similar purposes by Nature. Biological electronic devices, proteins, have extremely high efficiency, precise spatial organization, and are inexpensive in fabrication. They can be fused with inorganic and organic materials such as conductors, semiconductors, conductive polymers, or quantum dots. The photosynthetic reaction center protein (RC) is one of the most advanced photo-electronic devices developed by Nature. It has nearly 100% quantum yield of primary charge separation, an extremely fast operation time (about 10 -9 s, or operation frequency of ~10 9 Hz), and a very efficient stabilization of separated charges (ratio of charge separation rate to that of charge recombination is about 10 4). The charge separation and stabilization takes place in a complex of 7 nm size and leads to the formation of a local electric field of about 10 6 V/cm. A coupling of photosynthetic RC to inorganic electrodes is attractive for the identification of the mechanisms of inter-protein electron transfer (ET) and for the possible applications in the construction of protein-based innovative photoelectronic and photovoltaic devices. In this presentation we describe a new type of hybrid bio-inorganic photoelectronic devices based on photosynthetic proteins and inorganic materials. Using genetically engineered bacterial RCs and specifically synthesized organic linkers, we were able to construct self-assembled and aligned protein complexes with various metals and semiconductors, including gold, indium tin oxide (ITO), nanoporous TiO II, highly ordered pyrolytic graphite

  10. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann

    2016-04-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  11. Advances in digital video for electronic media.

    PubMed

    McAfooes, J A

    1997-01-01

    From media's early days of film strips and records, to today's multimedia CD-ROMs, nurses have embraced educational tools. Today, the capabilities of these tools have placed a tremendous demand for providing information any time, any where. This has led to increasing digitization of sights and sounds. Once digitized, this information can travel over information highways made up of telephone lines, fiberoptic cables, microwaves and satellites, or it can be stored on magnetic and optical media. Technological advances have made it possible for computer users to create, store and retrieve high quality digital still and moving video and audio for inclusion in electronic media. Methods for digitizing include capturing and converting the information with cameras, scanners and capture boards. Digital video compression/decompression (codec) standards vary in quality. Potential uses of digital video abound including video on demand, videoconferencing, distance learning, telemedicine, on-line education and computer-based training. Examples illustrating the differences in digital video formats will be shown during the presentation. PMID:10175444

  12. Advances in digital video for electronic media.

    PubMed

    McAfooes, J A

    1997-01-01

    From media's early days of film strips and records, to today's multimedia CD-ROMs, nurses have embraced educational tools. Today, the capabilities of these tools have placed a tremendous demand for providing information any time, any where. This has led to increasing digitization of sights and sounds. Once digitized, this information can travel over information highways made up of telephone lines, fiberoptic cables, microwaves and satellites, or it can be stored on magnetic and optical media. Technological advances have made it possible for computer users to create, store and retrieve high quality digital still and moving video and audio for inclusion in electronic media. Methods for digitizing include capturing and converting the information with cameras, scanners and capture boards. Digital video compression/decompression (codec) standards vary in quality. Potential uses of digital video abound including video on demand, videoconferencing, distance learning, telemedicine, on-line education and computer-based training. Examples illustrating the differences in digital video formats will be shown during the presentation.

  13. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  14. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  15. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  16. Advanced Silicon Solar Cell Device Physics and Design

    NASA Astrophysics Data System (ADS)

    Deceglie, Michael Gardner

    A fundamental challenge in the development and deployment of solar photovoltaic technology is a reduction in cost enabling direct competition with fossil-fuel-based energy sources. A key driver in this cost reduction is optimized device efficiency, because increased energy output leverages all photovoltaic system costs, from raw materials and module manufacturing to installation and maintenance. To continue progress toward higher conversion efficiencies, solar cells are being fabricated with increasingly complex designs, including engineered nanostructures, heterojunctions, and novel contacting and passivation schemes. Such advanced designs require a comprehensive and unified understanding of the optical and electrical device physics at the microscopic scale. This thesis focuses on a microscopic understanding of solar cell optoelectronic performance and its impact on cell optimization. We consider this in three solar cell platforms: thin-film crystalline silicon, amorphous/crystalline silicon heterojunctions, and thin-film cells with nanophotonic light trapping. The work described in this thesis represents a powerful design paradigm, based on a detailed physical understanding of the mechanisms governing solar cell performance. Furthermore, we demonstrate the importance of understanding not just the individual mechanisms, but also their interactions. Such an approach to device optimization is critical for the efficiency and competitiveness of future generations of solar cells.

  17. Deformable devices with integrated functional nanomaterials for wearable electronics

    NASA Astrophysics Data System (ADS)

    Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

    2016-03-01

    As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

  18. 77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-08

    ... COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... devices, including mobile phones and tablet computers, and components thereof by reason of infringement of... certain electronics devices, including mobile phones and tablet computers, and components thereof...

  19. A Web Service and Interface for Remote Electronic Device Characterization

    ERIC Educational Resources Information Center

    Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

    2011-01-01

    A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

  20. Travel in Adverse Weather Using Electronic Mobility Guidance Devices

    ERIC Educational Resources Information Center

    Farmer, Leicester W.

    1975-01-01

    After a discussion of the required characteristics of an ideal aid for blind individuals traveling in adverse weather, four electronic mobility guidance devices- the Mowat Sonar Sensor, the Russell E Model Pathsounder, the Bionic C-5 Laser Cane, and the Mark II Binaural Sensory Aid-are described in detail. (Author/SB)

  1. Front and backside processed thin film electronic devices

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  2. Acute effects of an alternative electronic-control-device waveform in swine.

    PubMed

    Jauchem, James; Beason, Charles W; Cook, Michael C

    2009-01-01

    In previous studies, repeated 5-s exposures of anesthetized pigs to an electronic control device (TASER International's Advanced TASER X26 device) resulted in acidosis and increases in blood electrolytes. In the current study, experiments were performed to investigate the effects of longer continuous exposures to a different electronic-control-device waveform. After intramuscular injection of tiletamine HCl and zolazepam HCl, anesthesia was maintained with propofol infusion. Ten pigs were exposed to either 30- or 60-s applications of an electronic waveform similar to the TASER-X26 device. Transient increases in potassium, and sodium were consistent with previous reports in the literature dealing with studies of muscle stimulation or exercise. Blood pH was significantly decreased after exposure, but subsequently returned to baseline levels. Lactate was highly elevated and remained somewhat increased even after three hrs. Serum myoglobin was increased after exposure and remained elevated for the 3-h follow-up period. Acidosis would appear to be one of the major concerns with long-duration (e.g., several min) exposures over a short period of time. Even with the extremely low pH immediately after exposure, all animals survived. On the basis of these results, further development of useful continuous-exposure electronic control devices is at least feasible, with the caveat that some medical monitoring of subjects may be required.

  3. Electrodes mitigating effects of defects in organic electronic devices

    DOEpatents

    Heller, Christian Maria Anton

    2008-05-06

    A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

  4. Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices

    NASA Astrophysics Data System (ADS)

    Do, Van-Nam

    2014-09-01

    We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nano-scale devices and low-dimensional materials. Concretely, we present the definition of the four real-time Green functions, the retarded, advanced, lesser and greater functions. Basic relations among these functions and their equations of motion are also presented in detail as the basis for the performance of analytical and numerical calculations. In particular, we review in detail two recursive algorithms, which are implemented in OPEDEVS to solve the Green functions defined in finite-size opened systems and in the surface layer of semi-infinite homogeneous ones. Operation of the package is then illustrated through the simulation of the transport characteristics of a typical semiconductor device structure, the resonant tunneling diodes.

  5. Electronic simulation of a multiterminal quantum Hall effect device

    NASA Astrophysics Data System (ADS)

    Sosso, A.; Capra, P. P.

    1999-04-01

    A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricketts and Kemeny electrical model of multiterminal quantum Hall effect (QHE) devices. By means of the new equivalent circuit, commercial software for electronic circuit analysis can be used to study a QHE measurement system. Moreover, it can be easily implemented, and we were able to build a circuit that simulates the electrical behavior of a QHE device. Particular care was taken in the design to reduce the effect of parasitic capacitances, which act as loads connected to the device terminals. Bootstrap buffers have been adopted to significantly reduce the capacitance of input stage. The small residual loading effect can be calculated and eliminated, allowing simulation of a QHE device with good accuracy.

  6. THz devices based on 2D electron systems

    NASA Astrophysics Data System (ADS)

    Xing, Huili Grace; Yan, Rusen; Song, Bo; Encomendero, Jimy; Jena, Debdeep

    2015-05-01

    In two-dimensional electron systems with mobility on the order of 1,000 - 10,000 cm2/Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 - 3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

  7. Towards manufacturing of advanced logic devices by double-patterning

    NASA Astrophysics Data System (ADS)

    Koay, Chiew-seng; Halle, Scott; Holmes, Steven; Petrillo, Karen; Colburn, Matthew; van Dommelen, Youri; Jiang, Aiqin; Crouse, Michael; Dunn, Shannon; Hetzer, David; Kawakami, Shinichiro; Cantone, Jason; Huli, Lior; Rodgers, Martin; Martinick, Brian

    2011-04-01

    As reported previously, the IBM Alliance has established a DETO (Double-Expose-Track-Optimized) baseline, in collaboration with ASML, TEL, and CNSE, to evaluate commercially available DETO photoresist system for the manufacturing of advanced logic devices. Although EUV lithography is the baseline strategy for <2x nm logic nodes, alternative techniques are still being pursued. The DETO technique produces pitch-split patterns capable of supporting 16 nm and 11 nm node semiconductor devices. We present the long-term monitoring performances of CD uniformity (CDU), overlay, and defectivity of our DETO process. CDU and overlay performances for controlled experiments are also presented. Two alignment schemes in DETO are compared experimentally for their effects on inter-level & intralevel overlays, and space CDU. We also experimented with methods for improving CDU, in which the CD-OptimizerTMand DoseMapperTM were evaluated separately and in tandem. Overlay improvements using the Correction Per Exposure (CPE) and the intra-field High-Order Process Correction (i-HOPC) were compared against the usual linear correction method. The effects of the exposure field size are also compared between a small field and the full field. Included in all the above, we also compare the performances derived from stack-integrated wafers and bare-Si wafers.

  8. Semi-shunt field emission in electronic devices

    SciTech Connect

    Karpov, V. G.; Shvydka, Diana

    2014-08-04

    We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.

  9. Evaluation of Miscellaneous and Electronic Device Energy Use in Hospitals

    SciTech Connect

    Black, Douglas R.; Lanzisera, Steven M.; Lai, Judy; Brown, Richard E.; Singer, Brett C.

    2012-09-01

    Miscellaneous and electronic loads (MELs) consume about one-thirdof the primary energy used in US buildings, and their energy use is increasing faster than other end-uses. In healthcare facilities, 30percent of the annual electricity was used by MELs in 2008. This paper presents methods and challenges for estimating medical MELs energy consumption along with estimates of energy use in a hospital by combining device-level metered data with inventories and usage information. An important finding is that common, small devices consume large amounts of energy in aggregate and should not be ignored when trying to address hospital energy use.

  10. Surface chemical deposition of advanced electronic materials

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron

    The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current--time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least -200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an airexposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(✓3x✓3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density

  11. Electron guns and collectors developed at INP for electron cooling devices

    SciTech Connect

    Sharapa, A.N.; Shemyakin, A.V.

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  12. Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

    2014-12-01

    Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

  13. Weak Values from Displacement Currents in Multiterminal Electron Devices.

    PubMed

    Marian, D; Zanghì, N; Oriols, X

    2016-03-18

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments. PMID:27035291

  14. Weak Values from Displacement Currents in Multiterminal Electron Devices

    NASA Astrophysics Data System (ADS)

    Marian, D.; Zanghı, N.; Oriols, X.

    2016-03-01

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments.

  15. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

    NASA Astrophysics Data System (ADS)

    Cui, Yi; Lieber, Charles M.

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a ``bottom-up'' paradigm for electronics manufacturing.

  16. Weak Values from Displacement Currents in Multiterminal Electron Devices.

    PubMed

    Marian, D; Zanghì, N; Oriols, X

    2016-03-18

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments.

  17. Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

    PubMed

    Cui, Y; Lieber, C M

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.

  18. Exploiting the colloidal nanocrystal library to construct electronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high–dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

  19. Exploiting the colloidal nanocrystal library to construct electronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

  20. Exploiting the colloidal nanocrystal library to construct electronic devices.

    PubMed

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second. PMID:27124455

  1. 76 FR 48169 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-08

    ... Microbiology/ Medical Countermeasure Devices; Public Meeting AGENCY: Food and Drug Administration, HHS. ACTION... following public meeting: ``Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical... multiplexed microbiology/medical countermeasure (MCM) devices, their clinical application and public...

  2. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2006-01-17

    The employment of metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The fuel cell includes an electrolyte membrane comprising a membrane support structure comprising bacterial cellulose, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on an opposite side of the electrolyte membrane. At least one of the anode and the cathode comprises an electrode support structure comprising bacterial cellulose, and a catalyst disposed in or on the electrode support structure.

  3. Advanced Concepts for Electron-Ion Collider

    SciTech Connect

    Yaroslav Derbenev

    2002-08-01

    A superconducting energy recovery linac (ERL) of 5 to 10 GeV was proposed earlier as an alternative to electron storage rings to deliver polarized electron beam for electron-ion collider (EIC). To enhance the utilization efficiency of electron beam from a polarized source, it is proposed to complement the ERL by circulator ring (CR) wherein the injected electrons undergo up to 100 revolutions colliding with the ion beam. In this way, electron injector and linac operate in pulsed current (beam energy recovery) regime of a relatively low average current, while the polarization is still easily delivered and preserved. To make it also easier delivering and manipulating the proton and light ion polarization, twisted (figure 8) synchrotrons are proposed for heavy particle booster and collider ring. Same type of beam orbit can be used then for electron circulator. Electron cooling (EC) of the ion beam is considered an inevitable component of high luminosity EIC (1033/s. cm2 or above). It is recognized that EC also gives a possibility to obtain very short ion bunches, that allows much stronger final focusing. At the same time, short bunches make feasible the crab crossing (and traveling focus for ion beam) at collision points, hence, allow maximizing the collision rate. As a result, one can anticipate the luminosity increase by one or two orders of magnitude.

  4. Drafting. Advanced Print Reading--Electronics.

    ERIC Educational Resources Information Center

    Oregon State Dept. of Education, Salem.

    This document is a workbook for drafting students learning the basics of reading and interpreting electronic drawings and diagrams. The workbook contains eight units covering the following material: basic symbols; circuit symbols; electron tube symbols; winding symbols; semiconductor symbols; miscellaneous symbols; schematic diagrams; and…

  5. Silicon and germanium crystallization techniques for advanced device applications

    NASA Astrophysics Data System (ADS)

    Liu, Yaocheng

    Three-dimensional architectures are believed to be one of the possible approaches to reduce interconnect delay in integrated circuits. Metal-induced crystallization (MIC) can produce reasonably high-quality Si crystals with low-temperature processing, enabling the monolithic integration of multilevel devices and circuits. A two-step MIC process was developed to make single-crystal Si pillars on insulator by forming a single-grain NiSi2 template in the first step and crystallizing the amorphous Si by NiSi2-mediated solid-phase epitaxy (SPE) in the second step. A transmission electron microscopy study clearly showed the quality improvement over the traditional MIC process. Another crystallization technique developed is rapid melt growth (RMG) for the fabrication of Ge crystals and Ge-on-insulator (GeOI) substrates. Ge is an important semiconductor with high carrier mobility and excellent optoelectronic properties. GeOI substrates are particularly desired to achieve high device performances and to solve the process problems traditionally associated with bulk Ge wafers. High-quality Ge crystals and GeOI structures were grown on Si substrates using the novel rapid melt growth technique that integrates the key elements in Czochralski growth---seeding, melting, epitaxy and defect necking. Growth velocity and nucleation rate were calculated to determine the RMG process window. Self-aligned microcrucibles were created to hold the Ge liquid during the RMG annealing. Material characterization showed a very low defect density in the RMG GeOI structures. The Ge films are relaxed, with their orientations controlled by the Si substrates. P-channel MOSFETs and p-i-n photodetectors were fabricated with the GeOI substrates. The device properties are comparable to those obtained with bulk Ge wafers, indicating that the RMG GeOI substrates are well suited for device fabrication. A new theory, growth-induced barrier lowering (GIBL), is proposed to understand the defect generation in

  6. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    PubMed Central

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  7. Toward the development of portable miniature intelligent electronic color identification devices

    NASA Astrophysics Data System (ADS)

    Nicolau, Dan V., Jr.; Livingston, Peter; Jahshan, David; Evans, Rob

    2004-03-01

    The identification and differentiation of colours is a relatively problematic task for colour-impaired and partially vision-impaired persons and an impossible one for completely blind. In various contexts, this leads to a loss of independence or an increased risk of harm. The identification of colour using optoelectronic devices, on the other hand, can be done precisely and inexpensively. Additionally, breakthroughs in miniaturising and integrating colour sensors into biological systems may lead to significant advances in electronic implants for alleviating blindness. Here we present a functional handheld device developed for the identification of colour, intended for use by the vision-impaired. We discuss the features and limitations of the device and describe in detail one target application - the identification of different banknote denominations by the blind.

  8. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect

    Qu, Bo E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang E-mail: qhgong@pku.edu.cn

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  9. Calcium chloride electron injection/extraction layers in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Qu, Bo; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang

    2014-01-01

    Nontoxic calcium chloride (CaCl2) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl2 was 3.5 V and 21 960 cd/m2, respectively. OLED with 1.5 nm CaCl2 possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl2 was comparable to that of the control device with LiF. Therefore, CaCl2 has the potential to be used as the CBL for organic electronic devices.

  10. Radiation doses to insertion devices at the advanced photon source

    SciTech Connect

    Moog, E. R.; Den Hartog, P. K.; Semones, E. J.; Job, P. K.

    1997-07-01

    Dose measurements made on and around the insertion devices (IDs) at the Advanced Photon Source are reported. Attempts are made to compare these dose rates to dose rates that have been reported to cause radiation-induced demagnetization, but comparisons are complicated by such factors as the particular magnet material and the techniques used in its manufacture, the spectrum and type of radiation, and the demagnetizing field seen by the magnet. The spectrum of radiation at the IDs has been measured and found to include a large high-energy (7 GeV) component, at least during some runs. Lead shielding installed immediately upstream of the IDs has been found to decrease the dose to the upstream ends of the IDs. It has almost no effect on the dose to the downstream ends of the IDs, however, since much of the radiation travels through the ID vacuum chamber and cannot be readily shielded. Opening the gaps of the IDs during injection and at other times also helps decrease the radiation exposure.

  11. Radiation doses to insertion devices at the advanced photon source

    SciTech Connect

    Moog, E.R.; Den Hartog, P.K.; Semones, E.J.; Job, P.K.

    1997-07-01

    Dose measurements made on and around the insertion devices (IDs) at the Advanced Photon Source are reported. Attempts are made to compare these dose rates to dose rates that have been reported to cause radiation-induced demagnetization, but comparisons are complicated by such factors as the particular magnet material and the techniques used in its manufacture, the spectrum and type of radiation, and the demagnetizing field seen by the magnet. The spectrum of radiation at the IDs has been measured and found to include a large high-energy (7 GeV) component, at least during some runs. Lead shielding installed immediately upstream of the IDs has been found to decrease the dose to the upstream ends of the IDs. It has almost no effect on the dose to the downstream ends of the IDs, however, since much of the radiation travels through the ID vacuum chamber and cannot be readily shielded. Opening the gaps of the IDs during injection and at other times also helps decrease the radiation exposure. {copyright} {ital 1997 American Institute of Physics.}

  12. Design of advanced ultrasonic transducers for welding devices.

    PubMed

    Parrini, L

    2001-11-01

    A new high frequency ultrasonic transducer has been conceived, designed, prototyped, and tested. In the design phase, an advanced approach was used and established. The method is based on an initial design estimate obtained with finite element method (FEM) simulations. The simulated ultrasonic transducers and resonators are then built and characterized experimentally through laser interferometry and electrical resonance spectra. The comparison of simulation results with experimental data allows the parameters of FEM models to be adjusted and optimized. The achieved FEM simulations exhibit a remarkably high predictive potential and allow full control of the vibration behavior of the transducer. The new transducer is mounted on a wire bonder with a flange whose special geometry was calculated by means of FEM simulations. This flange allows the transducer to be attached on the wire bonder, not only in longitudinal nodes, but also in radial nodes of the ultrasonic field excited in the horn. This leads to a total decoupling of the transducer to the wire bonder, which has not been achieved so far. The new approach to mount ultrasonic transducers on a welding device is of major importance, not only for wire bonding, but also for all high power ultrasound applications and has been patented.

  13. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Mekhiche, Mike; Dufera, Hiz; Montagna, Deb

    2012-10-29

    The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressed cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.

  14. Electron processing of fibre-reinforced advanced composites

    NASA Astrophysics Data System (ADS)

    Singh, Ajit; Saunders, Chris B.; Barnard, John W.; Lopata, Vince J.; Kremers, Walter; McDougall, Tom E.; Chung, Minda; Tateishi, Miyoko

    1996-08-01

    Advanced composites, such as carbon-fibre-reinforced epoxies, are used in the aircraft, aerospace, sporting goods, and transportation industries. Though thermal curing is the dominant industrial process for advanced composites, electron curing of similar composites containing acrylated epoxy matrices has been demonstrated by our work. The main attraction of electron processing technology over thermal technology is the advantages it offers which include ambient temperature curing, reduced curing times, reduced volatile emissions, better material handling, and reduced costs. Electron curing technology allows for the curing of many types of products, such as complex shaped, those containing different types of fibres, and up to 15 cm thick. Our work has been done principally with the AECL's 10 MeV, 1 kW electron accelerator; we have also done some comparative work with an AECL Gammacell 220. In this paper we briefly review our work on the various aspects of electron curing of advanced composites and their properties.

  15. Opto-electronic devices with nanoparticles and their assemblies

    NASA Astrophysics Data System (ADS)

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (< 100nm) particles provide tremendous possibilities due to their unique electrical, optical, and mechanical properties. Plethora of NPs with various chemical composition, size and shape has been synthesized. Clever designs of sub-wavelength structures enable observation of unusual properties of materials, and have led to new areas of research such as metamaterials. This dissertation describes two self-assemblies of gold nanoparticles, leading to an ultra-soft thin film and multi-functional single electron device at room temperature. First, the layer-by-layer self-assembly of 10nm Au nanoparticles and polyelectrolytes is shown to behave like a cellular-foam with modulus below 100 kPa. As a result, the composite thin film (˜ 100nm) is 5 orders of magnitude softer than an equally thin typical polymer film. The thin film can be compressed reversibly to 60% strain. The extraordinarily low modulus and high compressibility are advantageous in pressure sensing applications. The unique mechanical properties of the composite film lead to development of an ultra-sensitive tactile imaging device capable of screening for breast cancer. On par with human finger sensitivity, the tactile device can detect a 5mm imbedded object up to 20mm below the surface with low background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au

  16. Optical sensor array platform based on polymer electronic devices

    NASA Astrophysics Data System (ADS)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  17. Ultra-thin layer packaging for implantable electronic devices

    NASA Astrophysics Data System (ADS)

    Hogg, A.; Aellen, T.; Uhl, S.; Graf, B.; Keppner, H.; Tardy, Y.; Burger, J.

    2013-07-01

    State of the art packaging for long-term implantable electronic devices generally uses reliable metal and glass housings; however, these are limited in the miniaturization potential and cost reduction. This paper focuses on the development of biocompatible hermetic thin-film packaging based on poly-para-xylylene (Parylene-C) and silicon oxide (SiOx) multilayers for smart implantable microelectromechanical systems (MEMS) devices. For the fabrication, a combined Parylene/SiOx single-chamber deposition system was developed. Topological aspects of multilayers were characterized by atomic force microscopy and scanning electron microscopy. Material compositions and layer interfaces were analyzed by Fourier transform infrared spectrometry and x-ray photoelectron spectroscopy. To evaluate the multilayer corrosion protection, water vapor permeation was investigated using a calcium mirror test. The calcium mirror test shows very low water permeation rates of 2 × 10-3 g m-2 day-1 (23 °C, 45% RH) for a 4.7 µm multilayer, which is equivalent to a 1.9 mm pure Parylene-C coating. According to the packaging standard MIL-STD-883, the helium gas tightness was investigated. These helium permeation measurements predict that a multilayer of 10 µm achieves the hermeticity acceptance criterion required for long-term implantable medical devices.

  18. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices

    PubMed Central

    Chen, Duan; Wei, Guo-Wei

    2010-01-01

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  19. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices.

    PubMed

    Chen, Duan; Wei, Guo-Wei

    2010-06-20

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  20. An Electromagnetic Spectrum for Millennial Students: Teaching Light, Color, Energy, and Frequency Using the Electronic Devices of Our Time

    ERIC Educational Resources Information Center

    Murphy, Maureen Kendrick

    2010-01-01

    In this article, a comparison of student learning outcomes is made in sophomore-level physical science classes using a "traditional" pedagogical approach versus a "modern" approach. Specifically, when students were taught the electromagnetic spectrum using diagrams and examples that incorporate technological advances and electronic devices of our…

  1. Advances in DC photocathode electron guns

    SciTech Connect

    Bruce M. Dunham; P. Heartmann; Reza Kazimi; Hongxiu Liu; B. M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; Charles K. Sinclair

    1998-07-01

    At Jefferson Lab, a DC photoemission gun using GaAs and GaAs-like cathodes provides a source of polarized electrons for the main accelerator. The gun is required to produce high average current with long operational lifetimes and high system throughout. Recent work has shown that careful control of the parameters affecting cathode lifetime lead to dramatic improvements in source operation. These conditions include vacuum and the related effect of ion backbombardment, and precise control of all of the electrons emitted from the cathode. In this paper, the authors will review recent results and discuss implications for future photocathode guns.

  2. Descriptions of a linear device developed for research on advanced plasma imaging and dynamics

    SciTech Connect

    Chung, J.; Lee, K. D.; Seo, D. C.; Nam, Y. U.; Ko, W. H.; Lee, J. H.; Choi, M. C.

    2009-10-15

    The research on advanced plasma imaging and dynamics (RAPID) device is a newly developed linear electron cyclotron resonance (ECR) plasma device. It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. A 6 kW 2.45 GHz magnetron is used to produce steady-state ECR plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). The cylindrical stainless steel vacuum chamber is 300 mm in diameter and 750 mm in length and has eight radial and ten axial ports including 6-in. and 8-in. viewing windows for heating and diagnostics. Experimental observation of ECR plasma heating has been recently carried out during the initial plasma operation. The main diagnostic systems including a 94 GHz heterodyne interferometer, a high-resolution 25 channel one-dimensional array spectrometer, a single channel survey spectrometer, and an electric probe have been also prepared. The RAPID device is a flexible simulator for the understanding of tokamak edge plasma physics and new diagnostic system development. In this work, we describe the RAPID device and initial operation results.

  3. Polyaniline/single-walled carbon nanotube composite electronic devices

    NASA Astrophysics Data System (ADS)

    Ramamurthy, P. C.; Malshe, A. M.; Harrell, W. R.; Gregory, R. V.; McGuire, K.; Rao, A. M.

    2004-11-01

    Composites of high molecular weight polyaniline (PANI) and various weight percentages of single-walled carbon nanotubes (SWNT) were fabricated using solution processing. Electrical characteristics of metal-semiconductor (MS) devices fabricated from the PANI/SWNT composites were studied. Current-voltage ( I- V) characteristics of these devices indicate a significant increase in current with an increase in carbon nanotube concentration in the composite. The dominant transport mechanisms operating in these devices were investigated by plotting the forward I- V data on a log-log scale, which revealed two power-law regions with different exponents. In the lower voltage range, the exponent is approximately 1, implying that the charge transport mechanism is governed by Ohm's law. The charge transport mechanism in the higher voltage range, where the exponent varies between 1.1 and 1.7, is consistent with space-charge-limited (SCL) emission in the presence of shallow traps. The critical voltage ( Vc), which characterizes the onset of SCL conduction, decreases with increasing SWNT concentration. In addition, Vc was observed to increase with temperature. These initial results indicate that with further improvements in material consistency and reduction in defect densities, the polyaniline/single-walled carbon nanotube composite material can be used to fabricate organic electronic devices leading to many useful applications in microelectronics.

  4. Simulations of charge transfer in Electron Multiplying Charge Coupled Devices

    NASA Astrophysics Data System (ADS)

    Bush, N.; Stefanov, K.; Hall, D.; Jordan, D.; Holland, A.

    2014-12-01

    Electron Multiplying Charge Coupled Devices (EMCCDs) are a variant of traditional CCD technology well suited to applications that demand high speed operation in low light conditions. On-chip signal amplification allows the sensor to effectively suppress the noise introduced by readout electronics, permitting sub-electron read noise at MHz pixel rates. The devices have been the subject of many detailed studies concerning their operation, however there has not been a study into the transfer and multiplication process within the EMCCD gain register. Such an investigation has the potential to explain certain observed performance characteristics, as well as inform further optimisations to their operation. In this study, the results from simulation of charge transfer within an EMCCD gain register element are discussed with a specific focus on the implications for serial charge transfer efficiency (CTE). The effects of operating voltage and readout speed are explored in context with typical operating conditions. It is shown that during transfer, a small portion of signal charge may become trapped at the semiconductor-insulator interface that could act to degrade the serial CTE in certain operating conditions.

  5. 78 FR 16707 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-18

    .... International Trade Commission has received a complaint entitled Certain Electronic Devices Having Placeshifting... From the Federal Register Online via the Government Publishing Office ] INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having Placeshifting or Display Replication Functionality and...

  6. Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

    NASA Technical Reports Server (NTRS)

    Nguyen, Truong X.

    2005-01-01

    Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

  7. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    PubMed

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared.

  8. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    PubMed

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared. PMID:27523768

  9. Development of medical electronic devices in the APL space department

    NASA Technical Reports Server (NTRS)

    Newman, A. L.

    1985-01-01

    Several electronic devices for automatically correcting specific defects in a body's physiologic regulation and allowing approximately normal functioning are described. A self-injurious behavior inhibiting system (SIBIS) is fastened to the arm of a person with chronic self-injurious behavior patterns. An electric shock is delivered into the arm whenever the device senses above-threshold acceleration of the head such as occur with head-bangers. Sounding a buzzer tone with the shock eventually allows transference of the aversive stimulus to the buzzer so shocks are no longer necessary. A programmable implantable medication system features a solenoid pump placed beneath the skin and refueled by hypodermic needle. The pump functions are programmable and can deliver insulin, chemotherapy mixes and/or pain killers according to a preset schedule or on patient demand. Finally, an automatic implantible defibrillator has four electrodes attached directly to the heart for sensing electrical impulses or emitting them in response to cardiac fibrillation.

  10. Cardiac Implantable Electronic Device Infection: From an Infection Prevention Perspective

    PubMed Central

    Sastry, Sangeeta; Rahman, Riaz; Yassin, Mohamed H.

    2015-01-01

    A cardiac implantable electronic device (CIED) is indicated for patients with severely reduced ejection fraction or with life-threatening cardiac arrhythmias. Infection related to a CIED is one of the most feared complications of this life-saving device. The rate of CIED infection has been estimated to be between 2 and 25; though evidence shows that this rate continues to rise with increasing expenditure to the patient as well as healthcare systems. Multiple risk factors have been attributed to the increased rates of CIED infection and host comorbidities as well as procedure related risks. Infection prevention efforts are being developed as defined bundles in numerous hospitals around the country given the increased morbidity and mortality from CIED related infections. This paper aims at reviewing the various infection prevention measures employed at hospitals and also highlights the areas that have relatively less established evidence for efficacy. PMID:26550494

  11. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  12. 78 FR 3319 - Amendments to Existing Validated End User Authorizations: Advanced Micro Devices China, Inc., Lam...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-16

    ... Micro 3D002, 3D003, AMD Technologies 75 FR 25763, 5/10/ Devices China, 3E001 (limited to (China) Co., 10... Suzhou, China 78 FR [INSERT FR 3C002 and 3C004 215021. PAGE NUMBER] 1/16/ and Advanced Micro 13... Authorizations: Advanced Micro Devices China, Inc., Lam Research Corporation, SK hynix Semiconductor (China)...

  13. Development of High Power Electron Beam Measuring and Analyzing System for Microwave Vacuum Electron Devices

    NASA Astrophysics Data System (ADS)

    Ruan, C. J.; Wu, X. L.; Li, Q. S.; Li, C. S.

    The measurement and analysis of high power electron beam during its formation and transmission are the basic scientific problems and key techniques for the development of high performance microwave vacuum electron devices, which are widely used in the fields of military weapon, microwave system and scientific instruments. In this paper, the dynamic parameters measurement and analysis system being built in Institute of Electronics, Chinese Academy of Sciences (IECAS) recently are introduced. The instrument are designed to determine the cross-section, the current density, and the energy resolution of the high power electron beam during its formation and transmission process, which are available both for the electron gun and the electron optics system respectively. Then the three dimension trajectory images of the electron beam can be rebuilt and display with computer controlled data acquisition and processing system easily. Thus, much more complicated structures are considered and solved completely to achieve its detection and analysis, such as big chamber with 10-6 Pa high vacuum system, the controlled detector movement system in axis direction with distance of 600 mm inside the vacuum chamber, the electron beam energy analysis system with high resolution of 0.5%, and the electron beam cross-section and density detector using the YAG: Ce crystal and CCD imaging system et al. At present, the key parts of the instrument have been finished, the cross-section experiment of the electron beam have been performed successfully. Hereafter, the instrument will be used to measure and analyze the electron beam with the electron gun and electron optics system for the single beam and multiple beam klystron, gyrotron, sheet beam device, and traveling wave tube etc. thoroughly.

  14. An electronic portal imaging device as a physics tool.

    PubMed

    Curtin-Savard, A; Podgorsak, E B

    1997-01-01

    An electronic portal imaging device (EPID) can be used not only to acquire megavoltage patient images but also to measure certain radiation beam parameters of the linear accelerator. EPID images can be used to verify field junctions, center of collimator rotation, or radiation vs. light field coincidence. If the EPID images are calibrated in terms of dose rate, an EPID can be applied to beam penumbra measurement, collimator transmission determination, or compensator verification. Beam parameters measured with EPIDs are in close agreement with those measured with film or ionization chamber, making EPIDs reliable physics tools for quality control of various beam parameters in radiotherapy. PMID:9243462

  15. Personal Electronic Devices and Their Interference with Aircraft Systems

    NASA Technical Reports Server (NTRS)

    Ross, Elden; Ely, Jay J. (Technical Monitor)

    2001-01-01

    A compilation of data on personal electronic devices (PEDs) attributed to having created anomalies with aircraft systems. Charts and tables display 14 years of incidents reported by pilots to the Aviation Safety Reporting System (ASRS). Affected systems, incident severity, sources of anomaly detection, and the most frequently identified PEDs are some of the more significant data. Several reports contain incidents of aircraft off course when all systems indicated on course and of critical events that occurred during landings and takeoffs. Additionally, PEDs that should receive priority in testing are identified.

  16. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  17. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  18. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  19. 78 FR 32442 - Certain Cases for Portable Electronic Devices; Determination Not To Review an Initial...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-30

    ... COMMISSION Certain Cases for Portable Electronic Devices; Determination Not To Review an Initial... sale within the United States after importation of certain cases for portable electronic devices by... portable electronic devices by reason of infringement of various claims of the '561 patent. The...

  20. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  1. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  2. 76 FR 72439 - Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-23

    ... COMMISSION Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of... received a complaint entitled In Re Certain Consumer Electronics and Display Devices and Products... electronics and display devices and products containing same. The complaint names Research In Motion Ltd....

  3. Gunn effect and transferred electron devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Reed, W. E.

    1980-06-01

    A bibliography containing 99 abstracts addressing the Gunn effect and transferred electron devices is presented. The application of Gunn effect and transferred electron devices to microwave generation, amplification, and control is included. The Gunn effect in semiconductors is dicussed along with the design, fabrication, and properties of Gunn diodes and transferred electron devices.

  4. Electronic heat current rectification in hybrid superconducting devices

    SciTech Connect

    Fornieri, Antonio Giazotto, Francesco; Martínez-Pérez, María José

    2015-05-15

    In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a single hybrid tunnel junction, we will show how the rectification efficiency can be largely increased by combining multiple junctions in an asymmetric chain of tunnel-coupled islands. We propose three different designs, analyzing their performance and their potential advantages. Besides being relevant from a fundamental physics point of view, this kind of devices might find important technological application as fundamental building blocks in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

  5. Point-of-care (POC) devices by means of advanced MEMS.

    PubMed

    Karsten, Stanislav L; Tarhan, Mehmet C; Kudo, Lili C; Collard, Dominique; Fujita, Hiroyuki

    2015-12-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications.

  6. Point-of-care (POC) devices by means of advanced MEMS.

    PubMed

    Karsten, Stanislav L; Tarhan, Mehmet C; Kudo, Lili C; Collard, Dominique; Fujita, Hiroyuki

    2015-12-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications. PMID:26459443

  7. Advanced power electronics and electric machinery program

    SciTech Connect

    None, None

    2007-12-01

    The U.S. Department of Energy (DOE) and the U.S. Council for Automotive Research (composed of automakers Ford, General Motors, and Chrysler) announced in January 2002 a new cooperative research effort. Known as "FreedomCAR" (derived from "Freedom" and "Cooperative Automotive Research"), it represents DOE's commitment to developing public/private partnerships to fund high-risk, high-payoff research into advanced automotive technologies. Efficient fuel cell technology, which uses hydrogen to power automobiles without air pollution, is a very promising pathway to achieving the ultimate vision. The new partnership replaces and builds upon the Partnership for a New Generation of Vehicles initiative that ran from 1993 through 2001.

  8. Polarization Effects in Methylammonium Lead Iodide Electronic Devices

    NASA Astrophysics Data System (ADS)

    Labram, John; Fabini, Douglas; Perry, Erin; Lehner, Anna; Wang, Hengbin; Glaudell, Anne; Wu, Guang; Evans, Hayden; Buck, David; Cotta, Robert; Echegoyen, Luis; Wudl, Fred; Seshadri, Ram; Chabinyc, Michael

    The immense success of group IV and III-V semiconductors has resulted in disruptive new photovoltaic (PV) cell technologies emerging extremely infrequently. For this reason, the recent progress in Methylammonium Lead Iodide (MAPbI3) solar cells can be viewed as a highly significant historic event. Despite the staggering recent progress made in reported power conversion efficiency (PCE), debate remains intense on the nature of the various instabilities synonymous with these devices. Using various electronic device measurements, we here present a body of experimental evidence consistent with the existence of a mobile ionic species within the MAPbI3 perovskite. Temperature-dependent transistor measurements reveal operating FET devices only below approximately 210K. This is attributed to ionic screening of the (otherwise charge-neutral) semiconductor-dielectric interface. Temperature-dependent pulsed-gate and impedance spectroscopy experiments also reveal behavior consistent with this interpretation. MAPbI3 PV cells were found to possess a PCE which decreases significantly below 210K. Combined, these set of measurements provide an interesting and consistent description of the internal processes at play within the MAPbI3 perovskite structure.

  9. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  10. Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

    SciTech Connect

    Long, Mingsheng; Gong, Youpin; Wei, Xiangfei; Zhu, Chao; Xu, Jianbao; Liu, Ping; Guo, Yufen; Li, Weiwei; Liu, Liwei; Liu, Guangtong

    2014-04-14

    We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to ∼120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature.

  11. Recent advances in molecular electronics based on carbon nanotubes.

    PubMed

    Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

    2010-01-01

    Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

  12. Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

    SciTech Connect

    Sukharev, V.; Kteyan, A.; Choy, J.-H.; Hovsepyan, H.; Markosian, A.; Zschech, E.; Huebner, R.

    2011-11-10

    Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D through-silicon-via (TSV) based technologies are outlined. The paper addresses the growing need in a simulation-based design verification flow capable to analyze a design of 3D IC stacks and to determine across-die out-of-spec variations in device electrical characteristics caused by the layout and through-silicon-via (TSV)/package-induced mechanical stress. The limited characterization/measurement capabilities for 3D IC stacks and a strict ''good die'' requirement make this type of analysis critical for the achievement of an acceptable level of functional and parametric yield and reliability. The paper focuses on the development of a design-for-manufacturability (DFM) type of methodology for managing mechanical stresses during a sequence of designs of 3D TSV-based dies, stacks and packages. A set of physics-based compact models for a multi-scale simulation to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D TSV technology is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics of the test-chip devices is presented. A strategy for generation of a simulation feeding data and respective materials characterization approach are proposed, with the goal to generate a database for multi-scale material parameters of wafer-level and package-level structures. For model validation, high-resolution strain measurements in Si channels of the test-chip devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm strain measurements so far.

  13. Materials, structures, and devices for high-speed electronics

    NASA Astrophysics Data System (ADS)

    Woollam, John A.; Snyder, Paul G.

    1992-12-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  14. Materials, structures, and devices for high-speed electronics

    NASA Technical Reports Server (NTRS)

    Woollam, John A.; Snyder, Paul G.

    1992-01-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  15. Methods for synchronizing a countdown routine of a timer key and electronic device

    SciTech Connect

    Condit, Reston A.; Daniels, Michael A.; Clemens, Gregory P.; Tomberlin, Eric S.; Johnson, Joel A.

    2015-06-02

    A timer key relating to monitoring a countdown time of a countdown routine of an electronic device is disclosed. The timer key comprises a processor configured to respond to a countdown time associated with operation of the electronic device, a display operably coupled with the processor, and a housing configured to house at least the processor. The housing has an associated structure configured to engage with the electronic device to share the countdown time between the electronic device and the timer key. The processor is configured to begin a countdown routine based at least in part on the countdown time, wherein the countdown routine is at least substantially synchronized with a countdown routine of the electronic device when the timer key is removed from the electronic device. A system and method for synchronizing countdown routines of a timer key and an electronic device are also disclosed.

  16. Recent progress in printed 2/3D electronic devices

    NASA Astrophysics Data System (ADS)

    Klug, Andreas; Patter, Paul; Popovic, Karl; Blümel, Alexander; Sax, Stefan; Lenz, Martin; Glushko, Oleksandr; Cordill, Megan J.; List-Kratochvil, Emil J. W.

    2015-09-01

    New, energy-saving, efficient and cost-effective processing technologies such as 2D and 3D inkjet printing (IJP) for the production and integration of intelligent components will be opening up very interesting possibilities for industrial applications of molecular materials in the near future. Beyond the use of home and office based printers, "inkjet printing technology" allows for the additive structured deposition of photonic and electronic materials on a wide variety of substrates such as textiles, plastics, wood, stone, tiles or cardboard. Great interest also exists in applying IJP in industrial manufacturing such as the manufacturing of PCBs, of solar cells, printed organic electronics and medical products. In all these cases inkjet printing is a flexible (digital), additive, selective and cost-efficient material deposition method. Due to these advantages, there is the prospect that currently used standard patterning processes can be replaced through this innovative material deposition technique. A main issue in this research area is the formulation of novel functional inks or the adaptation of commercially available inks for specific industrial applications and/or processes. In this contribution we report on the design, realization and characterization of novel active and passive inkjet printed electronic devices including circuitry and sensors based on metal nanoparticle ink formulations and the heterogeneous integration into 2/3D printed demonstrators. The main emphasis of this paper will be on how to convert scientific inkjet knowledge into industrially relevant processes and applications.

  17. New bio-inorganic photo-electronic devices based on photosynthetic proteins

    NASA Astrophysics Data System (ADS)

    Lebedev, Nikolai; Trammell, Scott; Griva, Igor; Spano, Anthony

    2006-10-01

    The photosynthetic reaction center (RC) is one of the most advanced light sensing and energy converting materials developed by Nature. Its coupling with inorganic surfaces is attractive for the identification of the mechanisms of interprotein electron transfer (ET) and for the possible applications for the construction of protein-based innovative photoelectronic and photovoltaic devices. Using genetically engineered bacterial RC proteins and specifically synthesized organic linkers, we were able to construct self-assembled and aligned biomolecular surfaces on various electrodes, including gold, carbon, indium tin oxide (ITO), highly ordered pyrrolytic graphite (HOPG) and carbon nanotube (CNT) arrays. Our results show that, after immobilization on the electrodes, the photosynthetic RC can operate as a highly efficient photosensor, optical switch, and photovoltaic device.

  18. 78 FR 4418 - Electronic Submission Process for Requesting Export Certificates From the Center for Devices and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-22

    ... HUMAN SERVICES Food and Drug Administration Electronic Submission Process for Requesting Export... availability of an electronic submission process for requesting export certificates for products regulated by FDA's Center for Devices and Radiological Health (CDRH). The electronic process will help fulfill...

  19. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  20. AN ADVANCED CALIBRATION PROCEDURE FOR COMPLEX IMPEDANCE SPECTRUM MEASUREMENTS OF ADVANCED ENERGY STORAGE DEVICES

    SciTech Connect

    William H. Morrison; Jon P. Christophersen; Patrick Bald; John L. Morrison

    2012-06-01

    With the increasing demand for electric and hybrid electric vehicles and the explosion in popularity of mobile and portable electronic devices such as laptops, cell phones, e-readers, tablet computers and the like, reliance on portable energy storage devices such as batteries has likewise increased. The concern for the availability of critical systems in turn drives the availability of battery systems and thus the need for accurate battery health monitoring has become paramount. Over the past decade the Idaho National Laboratory (INL), Montana Tech of the University of Montana (Tech), and Qualtech Systems, Inc. (QSI) have been developing the Smart Battery Status Monitor (SBSM), an integrated battery management system designed to monitor battery health, performance and degradation and use this knowledge for effective battery management and increased battery life. Key to the success of the SBSM is an in-situ impedance measurement system called the Impedance Measurement Box (IMB). One of the challenges encountered has been development of an accurate, simple, robust calibration process. This paper discusses the successful realization of this process.

  1. Electron Transport Simulations of 4-Terminal Crossed Graphene Nanoribbons Devices

    NASA Astrophysics Data System (ADS)

    Brandimarte, Pedro; Papior, Nick R.; Engelund, Mads; Garcia-Lekue, Aran; Frederiksen, Thomas; Sánchez-Portal, Daniel

    Recently, it has been reported theoretically a current switching mechanism by voltage control in a system made by two perpendicular 14-armchair graphene nanoribbons (GNRs). In order to investigate the possibilities of using crossed GNRs as ON/OFF devices, we have studied their electronic and transport properties as function structural parameters determining the crossing. Our calculations were performed with TranSIESTA code, which has been recently generalized to consider N >= 1 arbitrarily distributed electrodes at finite bias. We find that the transmission along each individual GNR and among them strongly depends on the stacking. For a 60° rotation angle, the lattice matching in the crossing region provokes a strong scattering effect that translates into an increased interlayer transmission. FP7 FET-ICT PAMS-project (European Commission, contract 610446), MINECO (Grant MAT2013-46593-C6-2-P) and Basque Dep. de Educación, UPV/EHU (Grant IT-756-13).

  2. Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices

    PubMed Central

    Zebda, A.; Cosnier, S.; Alcaraz, J.-P.; Holzinger, M.; Le Goff, A.; Gondran, C.; Boucher, F.; Giroud, F.; Gorgy, K.; Lamraoui, H.; Cinquin, P.

    2013-01-01

    We describe the first implanted glucose biofuel cell (GBFC) that is capable of generating sufficient power from a mammal's body fluids to act as the sole power source for electronic devices. This GBFC is based on carbon nanotube/enzyme electrodes, which utilize glucose oxidase for glucose oxidation and laccase for dioxygen reduction. The GBFC, implanted in the abdominal cavity of a rat, produces an average open-circuit voltage of 0.57 V. This implanted GBFC delivered a power output of 38.7 μW, which corresponded to a power density of 193.5 μW cm−2 and a volumetric power of 161 μW mL−1. We demonstrate that one single implanted enzymatic GBFC can power a light-emitting diode (LED), or a digital thermometer. In addition, no signs of rejection or inflammation were observed after 110 days implantation in the rat. PMID:23519113

  3. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  4. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2011-06-07

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  5. Electron cyclotron beam measurement system in the Large Helical Device

    SciTech Connect

    Kamio, S. Takahashi, H.; Kubo, S.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Ito, S.; Kobayashi, S.; Mizuno, Y.; Okada, K.; Osakabe, M.; Mutoh, T.

    2014-11-15

    In order to evaluate the electron cyclotron (EC) heating power inside the Large Helical Device vacuum vessel and to investigate the physics of the interaction between the EC beam and the plasma, a direct measurement system for the EC beam transmitted through the plasma column was developed. The system consists of an EC beam target plate, which is made of isotropic graphite and faces against the EC beam through the plasma, and an IR camera for measuring the target plate temperature increase by the transmitted EC beam. This system is applicable to the high magnetic field (up to 2.75 T) and plasma density (up to 0.8 × 10{sup 19} m{sup −3}). This system successfully evaluated the transmitted EC beam profile and the refraction.

  6. Advanced integrated safeguards using front-end-triggering devices

    SciTech Connect

    Howell, J.A.; Whitty, W.J.

    1995-12-01

    This report addresses potential uses of front-end-triggering devices for enhanced safeguards. Such systems incorporate video surveillance as well as radiation and other sensors. Also covered in the report are integration issues and analysis techniques.

  7. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Hart, Philip R.

    2011-09-27

    This presentation from the Water Peer Review highlights one of the program's marine and hyrokinetics device design projects to scale up the current Ocean Power Technology PowerBuoy from 150kW to 500kW.

  8. Front-end electronics for impedimetric microfluidic devices

    NASA Astrophysics Data System (ADS)

    Ojarand, Jaan; Giannitsis, Athanasios T.; Min, Mart; Land, Raul

    2011-05-01

    Impedance spectroscopy is a common approach in assessing passive electrical properties of biological matter, however, serious problems appear in microfluidic devices in connection with distortion free signal acquisition from microelectrodes. The quality of impedance measurements highly depends on the presence of stray capacitances, signal distortions, and accompanying noises. Measurement deficiencies may be minimized with optimized electronics and sensing electrodes. The quality can further be improved with appropriate selection of measuring signals and also with selection of measuring methods such as a choice between current or voltage sources and between differential or singleended techniques. The microfluidic device that we present here incorporates an impedance sensor, which consists of an array of two sequential pairs of parallel microelectrodes, embedded in a microfluidic channel. All electronics and fluidic components are placed inside a metal holder, which ensures electric and fluidic connections to peripheral instruments. This configuration provides short electric connections and proper shielding. The method that we are using to evaluate the sample's impedance is the differential measurement technique, capable of suppressing the common mode signals and interferences, appearing in the signal-conditioning front-end circuit. Besides, it opens the possibility for compensating stray effects of the electrodes. For excitation we employ wideband signals, such as chirps or multifreqyency signals, which allow fast measurements, essential in the most impedimetric experiments in biology. The impedance spectra cover the frequency range between 10kHz - 10MHz. This is essential for accessing information relating to β-dispersion, which characterizes the cell's structural properties. We present two measurement schemes: (i) an in-phase differential method, which employs two transimpedance amplifiers, and (ii) an anti-phase method, which uses one transimpedance amplifier

  9. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. Dihydroazulene: from controlling photochromism to molecular electronics devices.

    PubMed

    Broman, Søren Lindbæk; Nielsen, Mogens Brøndsted

    2014-10-21

    Recent synthetic advances allowing large-scale preparation and systematic functionalization of the dihydroazulene (DHA)-vinylheptafulvene (VHF) photo-/thermoswitch have enabled detailed studies on how to tune optical and switching properties and have paved the way for using this system as a functional unit in molecular electronics and materials chemistry. Since discovery of its photochromism in the 1980'ies, numerous examples of DHA-VHF systems have been developed, allowing multimode switching, fluorescence-control and fine tuning of absorbance and VHF half-lives, giving insights into the mechanism of the switching event. Here, we present an overview of the properties of the DHA-VHF system, together with some selected synthetic procedures which have paved the way for its development.

  11. FY2009 Annual Progress Report for Advanced Power Electronics

    SciTech Connect

    Rogers, Susan A.

    2010-01-01

    The Advanced Power Electronics and Electric Machines (APEEM) subprogram within the Vehicle Technologies Program provides support and guidance for many cutting-edge automotive technologies now under development. Research is focused on understanding and improving the way the various new components of tomorrow's automobiles will function as a unified system to improve fuel efficiency.

  12. Epidermal electronics with advanced capabilities in near-field communication.

    PubMed

    Kim, Jeonghyun; Banks, Anthony; Cheng, Huanyu; Xie, Zhaoqian; Xu, Sheng; Jang, Kyung-In; Lee, Jung Woo; Liu, Zhuangjian; Gutruf, Philipp; Huang, Xian; Wei, Pinghung; Liu, Fei; Li, Kan; Dalal, Mitul; Ghaffari, Roozbeh; Feng, Xue; Huang, Yonggang; Gupta, Sanjay; Paik, Ungyu; Rogers, John A

    2015-02-25

    Epidermal electronics with advanced capabilities in near field communications (NFC) are presented. The systems include stretchable coils and thinned NFC chips on thin, low modulus stretchable adhesives, to allow seamless, conformal contact with the skin and simultaneous capabilities for wireless interfaces to any standard, NFC-enabled smartphone, even under extreme deformation and after/during normal daily activities.

  13. Electron Transport Materials: Synthesis, Properties and Device Performance

    SciTech Connect

    Cosimbescu, Lelia; Wang, Liang; Helm, Monte L.; Polikarpov, Evgueni; Swensen, James S.; Padmaperuma, Asanga B.

    2012-06-01

    We report the design, synthesis and characterization, thermal and photophysical properties of two silane based electron transport materials, dibenzo[b,d]thiophen-2-yltriphenylsilane (Si{phi}87) and (dibenzo[b,d]thiophen-2-yl)diphenylsilane (Si{phi}88) and their performance in blue organic light emitting devices (OLEDs). The utility of these materials in blue OLEDs with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C']picolinate (Firpic) as the phosphorescent emitter was demonstrated. Using the silane Si{phi}87 as the electron transport material (ETm) an EQE of 18.2% was obtained, with a power efficiency of 24.3 lm/W (5.8V at 1mA/cm{sup 2}), in a heterostructure. When Si{phi}88 is used, the EQE is 18.5% with a power efficiency of 26.0 lm/W (5.5V at 1mA/cm{sup 2}).

  14. 76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-01

    ... Music and Data Processing Devices, and Tablet Computers; Notice of Institution of Investigation... communication devices, portable music and data processing devices, and tablet computers by reason of... communication devices, portable music and data processing devices, and tablet computers that infringe one...

  15. Advanced Accelerating Structures and Their Interaction with Electron Beams

    SciTech Connect

    Gai Wei

    2009-01-22

    In this paper, we give a brief description of several advanced accelerating structures, such as dielectric loaded waveguides, photonic band gap, metamaterials and improved iris-loaded cavities. We describe wakefields generated by passing high current electron beams through these structures, and applications of wakefields to advanced accelerator schemes. One of the keys to success for high gradient wakefield acceleration is to develop high current drive beam sources. As an example, the high current RF photo injector at the Argonne Wakefield Accelerator, passed a {approx}80 nC electron beam through a high gradient dielectric loaded structure to achieve a 100 MV/m gradient. We will summarize recent related experiments on beam-structure interactions and also discuss high current electron beam generation and propagation and their applications to wakefield acceleration.

  16. Advanced accelerating structures and their interaction with electron beams.

    SciTech Connect

    Gai, W.; High Energy Physics

    2008-01-01

    In this paper, we give a brief description of several advanced accelerating structures, such as dielectric loaded waveguides, photonic band gap, metamaterials and improved iris-loaded cavities. We describe wakefields generated by passing high current electron beams through these structures, and applications of wakefields to advanced accelerator schemes. One of the keys to success for high gradient wakefield acceleration is to develop high current drive beam sources. As an example, the high current RF photo injector at the Argonne Wakefield Accelerator, passed a {approx}80 nC electron beam through a high gradient dielectric loaded structure to achieve a 100 MV/m gradient. We will summarize recent related experiments on beam-structure interactions and also discuss high current electron beam generation and propagation and their applications to wakefield acceleration.

  17. Recent progress of the Los Alamos advanced free electron laser

    SciTech Connect

    Nguyen, D.C.; Austin, R.H.; Chan, K.C.D.; Feldman, D.W.; Goldstein, J.C.; Gierman, S.M.; Kinross-Wright, J.M.; Kong, S.H.; Plato, J.G.; Russell, S.J.

    1994-05-01

    Many industrial and research applications can benefit from the availability of a compact, user-friendly, broadly tunable and high average power free electron laser (FEL). Over the past four years, the Los Alamos Advanced FEL has been built with these design goals. The key to a compact FEL is the integration of advanced beam technologies such as a high-brightness photoinjector, a high-gradient compact linac, and permanent magnet beamline components. These technologies enable the authors to shrink the FEL size yet maintain its high average power capability. The Advanced FEL has been in operation in the near ir (4-6 {mu}m) since early 1993. Recent results of the Advanced FEL lasing at saturation and upgrades to improve its average power are presented.

  18. 78 FR 6130 - Certain Electronic Digital Media Devices and Components Thereof: Commission Determination To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-29

    ... COMMISSION Certain Electronic Digital Media Devices and Components Thereof: Commission Determination To... certain electronic digital media devices and components thereof by reason of infringement of certain....usitc.gov . The public record for this investigation may be viewed on the Commission's electronic...

  19. 77 FR 68829 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-16

    ... COMMISSION Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements... limited exclusion order against certain electronic digital media devices and components thereof imported... electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during...

  20. 77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-16

    ... COMMISSION Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of... States after importation of certain mobile electronic devices incorporating haptics, by reason of the... viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired...

  1. Thin silicon strip devices for direct electron detection in transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Moldovan, Grigore; Li, Xiaobing; Wilshaw, Peter; Kirkland, Angus

    2008-06-01

    Indirect imaging detection systems used in transmission electron microscopy (TEM) impose a range of restrictions limiting performance that can be easily surpassed with direct sensing devices. A set of generic requirements is presented here first, illustrating the present detection needs and setting the context for further development in electron detection at TEM energy range. The use of directly exposed Si strip detectors in TEM is then investigated by means of Monte Carlo simulation of the electron-sensor interaction, showing that a sensitive layer with a thickness in the range of 50 μm is needed to achieve satisfactory efficiency. The results obtained here strongly indicate that improved performance would be achieved by replacing current indirect imaging systems with directly exposed thin Si strip detectors.

  2. A Comprehensive Microfluidics Device Construction and Characterization Module for the Advanced Undergraduate Analytical Chemistry Laboratory

    ERIC Educational Resources Information Center

    Piunno, Paul A. E.; Zetina, Adrian; Chu, Norman; Tavares, Anthony J.; Noor, M. Omair; Petryayeva, Eleonora; Uddayasankar, Uvaraj; Veglio, Andrew

    2014-01-01

    An advanced analytical chemistry undergraduate laboratory module on microfluidics that spans 4 weeks (4 h per week) is presented. The laboratory module focuses on comprehensive experiential learning of microfluidic device fabrication and the core characteristics of microfluidic devices as they pertain to fluid flow and the manipulation of samples.…

  3. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  4. Novel device-based interventional strategies for advanced heart failure.

    PubMed

    Toth, Gabor G; Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  5. Dosimetric properties of the Theraview fluoroscopic electronic portal imaging device.

    PubMed

    Glendinning, A G; Bonnett, D E

    2000-05-01

    Electronic portal imaging devices (EPIDs) can be used for non-imaging applications in radiotherapy such as patient dosimetry. Of the systems available, the fluoroscopic camera-based EPID Theraview (InfiMed Inc.) has not been studied to date, and a review of the dosimetric properties of the system is presented here. In the "single set-up" mode of image acquisition, pixel intensity increases sublinearly with applied dose. The response was dependent on the system's video signal gain and showed a threshold dose to the detector in the range 0.05-0.35 cGy, and pixel saturation at detector doses in the range 1.2-1.6 cGy. Repeated exposures of the EPID were observed to be extremely reproducible (standard deviation 0.5%). The sensitivity of the system showed a linear decline of 0.04% day-1 over a 68-day period, during which time the relative off-axis response within 10 x 10 cm2 field was constant to within a standard deviation of 0.56%. The system shows spatial non-uniformity, which requires correction for application to dose measurements in two-dimensions. Warm-up of the camera control unit required a period of at least 40 min and was associated with an enhancement in pixel intensity of up to 12%. A radiation dose history effect was observed at doses as low as 0.2 Gy. Camera dark current was shown to be negligible at normal accelerator operation. No discernible image distortion was found. Mechanical stability on gantry rotation was also assessed and image displacement of up to 5 mm at the isocentre was observed. It was concluded that the device could be used for dosimetry provided necessary precautions were observed and corrections made. PMID:10884749

  6. Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

    NASA Astrophysics Data System (ADS)

    Yip, Hin-Lap

    Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

  7. System and method for interfacing large-area electronics with integrated circuit devices

    DOEpatents

    Verma, Naveen; Glisic, Branko; Sturm, James; Wagner, Sigurd

    2016-07-12

    A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

  8. Advanced investigation of two-phase charge-coupled devices

    NASA Technical Reports Server (NTRS)

    Kosonocky, W. F.; Carnes, J. E.

    1973-01-01

    The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

  9. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  10. Emergency Dosimetry Using Ceramic Components in Personal Electronic Devices

    NASA Astrophysics Data System (ADS)

    Kouroukla, E. C.; Bailiff, I. K.; Terry, I.

    2014-02-01

    The rapid assessment of radiation dose to members of the public exposed to significant levels of ionizing radiation during a radiological incident presents a significant difficulty in the absence of planned radiation monitoring. However, within most personal electronic devices components such as resistors with alumina substrates can be found that have potentially suitable properties as solid state dosimeters using luminescence measurement techniques. The suitability of several types of ceramic-based components (e.g., resonators, inductors and resistors) has been previously examined using optically stimulated luminescence (OSL) and thermoluminescence (TL) techniques to establish their basic characteristics for the retrospective determination of absorbed dose. In this paper, we present results obtained with aluminum oxide surface mount resistors extracted from mobile phones that further extend this work. Very encouraging results have been obtained related to the measurement of luminescence sensitivity, dose response, reusability, limit of detection, signal reproducibility and known-dose recovery. However, the alumina exhibits a rapid loss of the latent luminescence signal with time following irradiation attributed to athermal (or anomalous) fading. The issues related to obtaining a reliable correction protocol for this loss and the detailed examinations required of the fading behavior are discussed.

  11. Spray cooling characteristics of nanofluids for electronic power devices

    NASA Astrophysics Data System (ADS)

    Hsieh, Shou-Shing; Leu, Hsin-Yuan; Liu, Hao-Hsiang

    2015-03-01

    The performance of a single spray for electronic power devices using deionized (DI) water and pure silver (Ag) particles as well as multi-walled carbon nanotube (MCNT) particles, respectively, is studied herein. The tests are performed with a flat horizontal heated surface using a nozzle diameter of 0.5 mm with a definite nozzle-to-target surface distance of 25 mm. The effects of nanoparticle volume fraction and mass flow rate of the liquid on the surface heat flux, including critical heat flux (CHF), are explored. Both steady state and transient data are collected for the two-phase heat transfer coefficient, boiling curve/ cooling history, and the corresponding CHF. The heat transfer removal rate can reach up to 274 W/cm2 with the corresponding CHF enhancement ratio of 2.4 for the Ag/water nanofluids present at a volume fraction of 0.0075% with a low mass flux of 11.9 × 10-4 kg/cm2s.

  12. Spray cooling characteristics of nanofluids for electronic power devices.

    PubMed

    Hsieh, Shou-Shing; Leu, Hsin-Yuan; Liu, Hao-Hsiang

    2015-01-01

    The performance of a single spray for electronic power devices using deionized (DI) water and pure silver (Ag) particles as well as multi-walled carbon nanotube (MCNT) particles, respectively, is studied herein. The tests are performed with a flat horizontal heated surface using a nozzle diameter of 0.5 mm with a definite nozzle-to-target surface distance of 25 mm. The effects of nanoparticle volume fraction and mass flow rate of the liquid on the surface heat flux, including critical heat flux (CHF), are explored. Both steady state and transient data are collected for the two-phase heat transfer coefficient, boiling curve/ cooling history, and the corresponding CHF. The heat transfer removal rate can reach up to 274 W/cm(2) with the corresponding CHF enhancement ratio of 2.4 for the Ag/water nanofluids present at a volume fraction of 0.0075% with a low mass flux of 11.9 × 10(-4) kg/cm(2)s. PMID:25852429

  13. Effect of symmetry on electronic properties of nano devices

    SciTech Connect

    Lamba, Vijay Kr Anju,; Aditi; Garg, O. P.

    2015-06-24

    Nano devices are a promising candidate for new technology nowadays. Great effort has been devoted recently to understand the charge transport at the interfaces in nano junctions and the role of the symmetry in the transport properties of molecular junctions. However, these studies have been largely based on the analysis of the low-bias conductance, which does not allow elucidating the exact influence of the symmetry in both the electronic structure and transport characteristics of the interfaces. In this work we present a theoretical study of the transport properties, and how conductance changes with symmetry. Herein, we investigate a di-thiol benzene (DTB) single-molecule system in which sulphur group from the molecule are anchored to two facing gold electrodes. We have performed first principles calculations of the transport properties of these molecules using a combination of density functional theory and non-equilibrium Green’s function techniques. Our computational results show that for the asymmetric models, the onset of the larger current occurs at current and conductance in the negative bias regime than that in the positive bias regime, and with ΔL increasing the conductance peak shifts towards the lower negative bias so that the I(G)-V curves behave more asymmetric. Further with variation of electrode surface we found that coupling constant for coned shaped electrode is less as compared to 2X2, and 3X3 atom electrodes, so there will be lower potential barrier for canonical electrode in comparison to that of others.

  14. Endoscopic Electrosurgery in Patients with Cardiac Implantable Electronic Devices

    PubMed Central

    Baeg, Myong Ki; Kim, Sang-Woo; Ko, Sun-Hye; Lee, Yoon Bum; Hwang, Seawon; Lee, Bong-Woo; Choi, Hye Jin; Park, Jae Myung; Lee, In-Seok; Oh, Yong-Seog; Choi, Myung-Gyu

    2016-01-01

    Background/Aims: Patients with cardiac implantable electronic devices (CIEDs) undergoing endoscopic electrosurgery (EE) are at a risk of electromagnetic interference (EMI). We aimed to analyze the effects of EE in CIED patients. Methods: Patients with CIED who underwent EE procedures such as snare polypectomy, endoscopic submucosal dissection (ESD), and endoscopic retrograde cholangiopancreatography (ERCP) with endoscopic sphincterotomy (EST) were retrospectively analyzed. Postprocedural symptoms as well as demographic and outpatient follow-up data were reviewed through medical records. Electrical data, including preprocedural and postprocedural arrhythmia records, were reviewed through pacemaker interrogation, 24-hour Holter monitoring, or electrocardiogram. Results: Fifty-nine procedures in 49 patients were analyzed. Fifty procedures were performed in 43 patients with a pacemaker, and nine were performed in six patients with an implantable cardioverter-defibrillator. There were one gastric and 44 colon snare polypectomies, five gastric and one colon ESDs, and eight ERCPs with EST. Fifty-five cases of electrical follow-up were noted, with two postprocedural changes not caused by EE. Thirty-one pacemaker interrogations had procedure recordings, with two cases of asymptomatic tachycardia. All patients were asymptomatic with no adverse events. Conclusions: Our study reports no adverse events from EE in patients with CIED, suggesting that this procedure is safe. However, because of the possibility of EMI, recommendations on EE should be followed. PMID:26867552

  15. Front and backside processed thin film electronic devices

    DOEpatents

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  16. Characterization of a linear device developed for research on advanced plasma imaging and dynamics

    SciTech Connect

    Chung, J.; Lee, K. D.; Seo, D. C.; Nam, Y. U.; Choi, M. C.

    2010-10-15

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 deg. C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5x10{sup -8} Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations.

  17. Characterization of a linear device developed for research on advanced plasma imaging and dynamics.

    PubMed

    Chung, J; Lee, K D; Seo, D C; Nam, Y U; Choi, M C

    2010-10-01

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 °C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5×10(-8) Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations.

  18. Testing aspects of advanced coherent electron cooling technique

    SciTech Connect

    Litvinenko, V.; Jing, Y.; Pinayev, I.; Wang, G.; Samulyak, R.; Ratner, D.

    2015-05-03

    An advanced version of the Coherent-electron Cooling (CeC) based on the micro-bunching instability was proposed. This approach promises significant increase in the bandwidth of the CeC system and, therefore, significant shortening of cooling time in high-energy hadron colliders. In this paper we present our plans of simulating and testing the key aspects of this proposed technique using the set-up of the coherent-electron-cooling proof-of-principle experiment at BNL.

  19. Graphene Electronic Device Based Biosensors and Chemical Sensors

    NASA Astrophysics Data System (ADS)

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  20. Novel transparent electrodes allow sustainable production of electronic devices

    SciTech Connect

    Constant, Kristen

    2010-12-27

    A novel technique for fabricating inexpensive, transparent electrodes from common metals has been developed by engineers and scientists at Iowa State University and Ames Laboratory. They exhibit very high transparency and are very good electrical conductors. This is a combination of properties that is difficult to achieve with common materials. The most frequently used transparent electrode in today's high-technology devices (such as LCD screens) is indium tin oxide (ITO). While ITO performs well in these applications, the supply of indium is very limited. In addition, it is rapidly decreasing as consumer demand for flat-panel electronics is skyrocketing. According to a 2004 US Geological Survey report, as little as 14 years exploitation of known indium reserves remains. In addition to increasing prices, the dwindling supply of indium suggests its use is not sustainable for future generations of electronics enthusiasts. Solar cells represent another application where transparent electrodes are used. To make solar-energy collection economically feasible, all parts of solar photovoltaics must be made more efficient and cost-effective. Our novel transparent electrodes have the potential to do both. In addition, there is much interest in developing more efficient, cost-effective, and environmentally friendly lighting. Incandescent light bulbs are very inefficient, because most of their energy consumption is wasted as heat. Fluorescent lighting is much more efficient but still uses mercury, an environmental toxin. An attractive alternative is offered by LEDs, which have very high efficiencies and long lifetimes, and do not contain mercury. If made bright enough, LED use for general lighting could provide a viable alternative. We have fabricated electrodes from more commonly available materials, using a technique that is cost effective and environmentally friendly. Most of today's electronic devices are made in specialized facilities equipped with low

  1. 76 FR 67200 - Prospective Grant of Exclusive License: Electron Paramagnetic Resonance Devices and Systems for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-31

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health Prospective Grant of Exclusive License: Electron... of use limited to electron paramagnetic resonance devices and systems for oximetry. DATES:...

  2. Architectural development of an advanced EVA Electronic System

    NASA Technical Reports Server (NTRS)

    Lavelle, Joseph

    1992-01-01

    An advanced electronic system for future EVA missions (including zero gravity, the lunar surface, and the surface of Mars) is under research and development within the Advanced Life Support Division at NASA Ames Research Center. As a first step in the development, an optimum system architecture has been derived from an analysis of the projected requirements for these missions. The open, modular architecture centers around a distributed multiprocessing concept where the major subsystems independently process their own I/O functions and communicate over a common bus. Supervision and coordination of the subsystems is handled by an embedded real-time operating system kernel employing multitasking software techniques. A discussion of how the architecture most efficiently meets the electronic system functional requirements, maximizes flexibility for future development and mission applications, and enhances the reliability and serviceability of the system in these remote, hostile environments is included.

  3. River Devices to Recover Energy with Advanced Materials (River DREAM)

    SciTech Connect

    McMahon, Daniel P.

    2013-07-03

    The purpose of this project is to develop a generator called a Galloping Hydroelectric Energy Extraction Device (GHEED). It uses a galloping prism to convert water flow into linear motion. This motion is converted into electricity via a dielectric elastomer generator (DEG). The galloping mechanism and the DEG are combined to create a system to effectively generate electricity. This project has three research objectives: 1. Oscillator development and design a. Characterize galloping behavior, evaluate control surface shape change on oscillator performance and demonstrate shape change with water flow change. 2. Dielectric Energy Generator (DEG) characterization and modeling a. Characterize and model the performance of the DEG based on oscillator design 3. Galloping Hydroelectric Energy Extraction Device (GHEED) system modeling and integration a. Create numerical models for construction of a system performance model and define operating capabilities for this approach Accomplishing these three objectives will result in the creation of a model that can be used to fully define the operating parameters and performance capabilities of a generator based on the GHEED design. This information will be used in the next phase of product development, the creation of an integrated laboratory scale generator to confirm model predictions.

  4. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    SciTech Connect

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-06

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as {approx} 16 We/kg and {approx} 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is {approx} 640 m2 and {approx} 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is {approx} 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is {approx} 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  5. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    NASA Astrophysics Data System (ADS)

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-01

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as ˜ 16 We/kg and ˜ 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is ˜ 640 m2 and ˜ 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is ˜ 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is ˜ 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  6. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  7. Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations

    NASA Astrophysics Data System (ADS)

    Soligo, Riccardo

    In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the

  8. Nonlinear quantum transport in low-dimensional electronic devices

    NASA Astrophysics Data System (ADS)

    Barrios, Andres Javier

    The study of transport processes in low-dimensional semiconductors requires a rigorous quantum mechanical treatment. However, a full-fledged quantum transport theory of electrons (or holes) in semiconductors of small scale, applicable in the presence of external fields of arbitrary strength, is still not available. In the literature, different approaches have been proposed, including: (a) the semiclassical Boltzmann equation, (b) perturbation theory based on Keldysh's Green functions, and (c) the Quantum Boltzmann Equation (QBE), previously derived by Van Vliet and coworkers, applicable in the realm of Kubo's Linear Response Theory (LRT). In the present work, we follow the method originally proposed by Van Wet in LRT. The Hamiltonian in this approach is of the form: H = H 0(E, B) + lambdaV, where H0 contains the externally applied fields, and lambdaV includes many-body interactions. This Hamiltonian differs from the LRT Hamiltonian, H = H0 - AF(t) + lambdaV, which contains the external field in the field-response part, -AF(t). For the nonlinear problem, the eigenfunctions of the system Hamiltonian, H0(E, B), include the external fields without any limitation on strength. In Part A of this dissertation, both the diagonal and nondiagonal Master equations are obtained after applying projection operators to the von Neumann equation for the density operator in the interaction picture, and taking the Van Hove limit, (lambda → 0, t → infinity, so that (lambda2 t)n remains finite). Similarly, the many-body current operator J is obtained from the Heisenberg equation of motion. In Part B, the Quantum Boltzmann Equation is obtained in the occupation-number representation for an electron gas, interacting with phonons or impurities. On the one-body level, the current operator obtained in Part A leads to the Generalized Calecki current for electric and magnetic fields of arbitrary strength. Furthermore, in this part, the LRT results for the current and conductance are

  9. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  10. Quality assurance of electron beams using a Varian electronic portal imaging device

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Heaton, R.; Norrlinger, B.; Islam, M.

    2013-08-01

    The feasibility of utilizing an electronic portal imaging device (EPID) for the quality assurance of electron beams was investigated. This work was conducted on a Varian 2100iX machine equipped with an amorphous silicon (aS1000) portal imager. The linearity of the imager pixel response as a function of exposed dose was first confirmed. The short-term reproducibility of the EPID response to electron beams was verified. Low (6 MeV), medium (12 MeV) and high (20 MeV) energies were tested, each along with small (6 × 6 cm2), medium (10 × 10 cm2) and large (20 × 20 cm2) applicators. Acquired EPID images were analyzed using an in-house MATLAB code for radiation field size, penumbra, symmetry and flatness. Field sizes and penumbra values agreed with those from film dosimetry to within 1 mm. Field symmetry and flatness constancies were measured over a period of three weeks. The results indicate that EPID can be used for routine quality assurance of electron beams.

  11. Use of Personal Electronic Devices by Nurse Anesthetists and the Effects on Patient Safety.

    PubMed

    Snoots, Lauren R; Wands, Brenda A

    2016-04-01

    Certified Registered Nurse Anesthetists (CRNAs) provide high-quality patient care to ensure patient safety. Strict vigilance and prompt response is required of the CRNA to make critical decisions. Distractions during anesthesia delivery may threaten patient safety. Personal electronic devices (PEDs) have become an integral tool used by 90% of adults. Adaptation of PEDs has permitted their integration into current anesthesia practice. Although technologic advancements have improved accessibility to resources and communication, they also serve as a source of distraction. Inappropriate PED use while administering anesthesia remains grossly underreported and understudied related to its impact on patient safety. The purpose of this article is to illustrate the critical need for further research in order to analyze safety risk, appropriately guide CRNA education, and properly develop and enforce media policies within organizations. Currently, PED use by the CRNA exists in ethically blurred boundaries, with potentially major patient safety and legal consequences. PMID:27311152

  12. Thermo-Mechanical Stress in High-Frequency Vacuum Electron Devices

    NASA Astrophysics Data System (ADS)

    Gamzina, Diana; Luhmann, Neville C.; Ravani, Bahram

    2016-09-01

    Analysis of the thermo-mechanical performance of high-frequency vacuum electron devices is essential to the advancement of RF sources towards high-power generation. Operation in an ultra-high vacuum environment, space restricting magnetic focusing, and limited material options are just some of the constraints that complicate thermal management in a high-power VED. An analytical method for evaluating temperature, stress, and deformation distribution in thin vacuum-to-cooling walls is presented, accounting for anisotropic material properties. Thin plate geometry is used and analytical expressions are developed for thermo-mechanical analysis that includes the microstructure effects of grain orientations. The method presented evaluates the maximum allowable heat flux that can be used to establish the power-handling limitation of high-frequency VEDs prior to full-scale design, accelerating time-to-manufacture.

  13. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  14. Use of portable electronic devices in a hospital setting and their potential for bacterial colonization.

    PubMed

    Khan, Amber; Rao, Amitha; Reyes-Sacin, Carlos; Hayakawa, Kayoko; Szpunar, Susan; Riederer, Kathleen; Kaye, Keith; Fishbain, Joel T; Levine, Diane

    2015-03-01

    Portable electronic devices are increasingly being used in the hospital setting. As with other fomites, these devices represent a potential reservoir for the transmission of pathogens. We conducted a convenience sampling of devices in 2 large medical centers to identify bacterial colonization rates and potential risk factors.

  15. 75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-28

    ... COMMISSION In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and... electronic devices, including mobile phones, portable music players, and computers, by reason of infringement... mobile phones, portable music players, or computers that infringe one or more of claims 1-12 of...

  16. 78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-06

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof... published a notice (78 FR 12892, May 31, 2013) of receipt of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof, DN 2958; the Commission...

  17. Activating Students' Interest and Participation in Lectures and Practical Courses Using Their Electronic Devices

    ERIC Educational Resources Information Center

    Wijtmans, Maikel; van Rens, Lisette; van Muijlwijk-Koezen, Jacqueline E.

    2014-01-01

    Interactive teaching with larger groups of students can be a challenge, but the use of mobile electronic devices by students (smartphones, tablets, laptops) can be used to improve classroom interaction. We have examined several types of tasks that can be electronically enacted in classes and practical courses using these devices: multiple choice…

  18. 77 FR 24764 - Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-25

    ... proposing voluntary NHTSA Driver Distraction Guidelines for in-vehicle electronic devices (77 FR 11200). The...-Vehicle Electronic Devices AGENCY: National Highway Traffic Safety Administration (NHTSA), Department of..., 2012, NHTSA published proposed voluntary NHTSA Driver Distraction Guidelines for in-vehicle...

  19. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  20. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  1. Ionic current devices-Recent progress in the merging of electronic, microfluidic, and biomimetic structures.

    PubMed

    Koo, Hyung-Jun; Velev, Orlin D

    2013-05-09

    We review the recent progress in the emerging area of devices and circuits operating on the basis of ionic currents. These devices operate at the intersection of electrochemistry, electronics, and microfluidics, and their potential applications are inspired by essential biological processes such as neural transmission. Ionic current rectification has been demonstrated in diode-like devices containing electrolyte solutions, hydrogel, or hydrated nanofilms. More complex functions have been realized in ionic current based transistors, solar cells, and switching memory devices. Microfluidic channels and networks-an intrinsic component of the ionic devices-could play the role of wires and circuits in conventional electronics.

  2. Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

    DOE PAGES

    Carey, Graham F.; Pardhanani, A. L.; Bova, S. W.

    2000-01-01

    In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of themore » methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.« less

  3. Advanced materials and device technology for photonic electric field sensors

    NASA Astrophysics Data System (ADS)

    Toney, James E.; Stenger, Vincent E.; Kingsley, Stuart A.; Pollick, Andrea; Sriram, Sri; Taylor, Edward

    2012-10-01

    Photonic methods for electric field sensing have been demonstrated across the electromagnetic spectrum from near-DC to millimeter waves, and at field strengths from microvolts-per-meter to megavolts-per-meter. The advantages of the photonic approach include a high degree of electrical isolation, wide bandwidth, minimum perturbation of the incident field, and the ability to operate in harsh environments. Aerospace applications of this technology span a wide range of frequencies and field strengths. They include, at the high-frequency/high-field end, measurement of high-power electromagnetic pulses, and at the low-frequency/low-field end, in-flight monitoring of electrophysiological signals. The demands of these applications continue to spur the development of novel materials and device structures to achieve increased sensitivity, wider bandwidth, and greater high-field measurement capability. This paper will discuss several new directions in photonic electric field sensing technology for defense applications. The first is the use of crystal ion slicing to prepare high-quality, single-crystal electro-optic thin films on low-dielectricconstant, RF-friendly substrates. The second is the use of two-dimensional photonic crystal structures to enhance the electro-optic response through slow-light propagation effects. The third is the use of ferroelectric relaxor materials with extremely high electro-optic coefficients.

  4. Polarization control for enhanced defect detection on advanced memory devices

    NASA Astrophysics Data System (ADS)

    Lee, Byoung-Ho; Ihm, Dong-Chul; Yeo, Jeong-Ho; Gluk, Yael; Meshulach, Doron

    2006-03-01

    Dense repetitive wafer structures, such as memory cells, with a pitch below the wavelength of the illumination light may take on effective birefringent properties, especially in layers of high refractive index materials such as silicon or conductors. Such induced "form birefringence" effects may result in dependency of the optical response on the illumination polarization and direction. In such structures, control over the polarization of the light becomes important to enhance signal-to-noise ratio (SNR) of pattern defects. We present defect detection results and analysis using DUV laser illumination for different polarization configurations and collection perspectives on Flash RAM devices. Improvement in detection SNR of bridge defect type is observed with linear illumination polarization perpendicular to the pattern lines. Generally, for small design rules (smaller than wavelength) polarization effects become more evident. Also, for smaller defect sizes, detection strongly depends on control of the illumination polarization. Linear polarization perpendicular to the pattern showed penetration into the structure even though the pitch is smaller than the illumination wavelength.

  5. Advanced numerical methods and software approaches for semiconductor device simulation

    SciTech Connect

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  6. [A device for mandibular advancement in respiratory disorders of sleep. Clinical study].

    PubMed

    Bacon, W; Tschill, P; Sforza, E; Krieger, J

    2000-12-01

    This study describes the technical steps for the making of a mandibular advancement device for sleep disordered patients (apnea index < 10). In a second part of the study, a group of 21 patients with sleep disordered breathing treated successfully with a mandibular advancement device is compared to a homologous control group. The experimental group showed cephalometric characteristics approaching those seen in patients with sleep apnea syndrome. The mandibular advancement device moved the mandibule forward (SNB angle increases by 1.7 degrees) and downward (mandibular plane angle increases by 3 degrees, which can be related to the 7.4 mm anterior vertical height increase). The hyoid bone adopted a more distant position from the cervical vertebrae. Important individual variations were seen among the patients for the optimal repositioning of the mandible.

  7. Optimization of a plasma focus device as an electron beam source for thin film deposition

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Lin, J.; Patran, A.; Wong, D.; Hassan, S. M.; Mahmood, S.; White, T.; Tan, T. L.; Springham, S. V.; Lee, S.; Lee, P.; Rawat, R. S.

    2007-05-01

    Electron beam emission characteristics from neon, argon, hydrogen and helium in an NX2 dense plasma focus (DPF) device were investigated in order to optimize the plasma focus device for deposition of thin films using energetic electron beams. A Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal characteristics, total electron charge and energy distributions of electron emission from the NX2 DPF device. It is found that hydrogen should be the first choice for thin film deposition as it produces the highest electron beam charge and higher energy (from 50 to 200 keV) electrons. Neon is the next best choice as it gives the next highest electron beam charge with mid-energy (from 30 to 70 keV) electrons. The operation of NX2 with helium at voltages above 12 kV produces a mid-energy (from 30 to 70 keV) electron beam with low-electron beam charge, however, argon is not a good electron beam source for our NX2 DPF device. Preliminary results of the first ever thin film deposition using plasma focus assisted pulsed electron deposition using a hydrogen operated NX2 plasma focus device are presented.

  8. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  9. Advances in Electronic-Nose Technologies Developed for Biomedical Applications

    PubMed Central

    Wilson, Alphus D.; Baietto, Manuela

    2011-01-01

    The research and development of new electronic-nose applications in the biomedical field has accelerated at a phenomenal rate over the past 25 years. Many innovative e-nose technologies have provided solutions and applications to a wide variety of complex biomedical and healthcare problems. The purposes of this review are to present a comprehensive analysis of past and recent biomedical research findings and developments of electronic-nose sensor technologies, and to identify current and future potential e-nose applications that will continue to advance the effectiveness and efficiency of biomedical treatments and healthcare services for many years. An abundance of electronic-nose applications has been developed for a variety of healthcare sectors including diagnostics, immunology, pathology, patient recovery, pharmacology, physical therapy, physiology, preventative medicine, remote healthcare, and wound and graft healing. Specific biomedical e-nose applications range from uses in biochemical testing, blood-compatibility evaluations, disease diagnoses, and drug delivery to monitoring of metabolic levels, organ dysfunctions, and patient conditions through telemedicine. This paper summarizes the major electronic-nose technologies developed for healthcare and biomedical applications since the late 1980s when electronic aroma detection technologies were first recognized to be potentially useful in providing effective solutions to problems in the healthcare industry. PMID:22346620

  10. Verification, Validation and Credibility Assessment of a Computational Model of the Advanced Resistive Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Werner, C. R.; Humphreys, B. T.; Mulugeta, L.

    2014-01-01

    The Advanced Resistive Exercise Device (ARED) is the resistive exercise device used by astronauts on the International Space Station (ISS) to mitigate bone loss and muscle atrophy due to extended exposure to microgravity (micro g). The Digital Astronaut Project (DAP) has developed a multi-body dynamics model of biomechanics models for use in spaceflight exercise physiology research and operations. In an effort to advance model maturity and credibility of the ARED model, the DAP performed verification, validation and credibility (VV and C) assessment of the analyses of the model in accordance to NASA-STD-7009 'Standards for Models and Simulations'.

  11. 76 FR 12144 - Advanced Optics Electronics, Inc.; Order of Suspension of Trading

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-04

    ... COMMISSION Advanced Optics Electronics, Inc.; Order of Suspension of Trading March 2, 2011. It appears to the... securities of Advanced Optics Electronics, Inc. because it has not filed any periodic reports since the... of investors require a suspension of trading in Advanced Optics Electronics, Inc. Therefore, it...

  12. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  13. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  14. A Cs2LiYCl6:Ce-based advanced radiation monitoring device

    NASA Astrophysics Data System (ADS)

    Budden, B. S.; Stonehill, L. C.; Dallmann, N.; Baginski, M. J.; Best, D. J.; Smith, M. B.; Graham, S. A.; Dathy, C.; Frank, J. M.; McClish, M.

    2015-06-01

    Cs2LiYCl6:Ce3+ (CLYC) scintillator has gained recent interest because of its ability to perform simultaneous gamma spectroscopy and thermal neutron detection. Discrimination between the two incident particle types owes to the fundamentally unique emission waveforms, a consequence of the interaction and subsequent scintillation mechanisms within the crystal. Due to this dual-mode detector capability, CLYC was selected for the development of an Advanced Radiation Monitoring Device (ARMD), a compact handheld instrument for radioisotope identification and localization. ARMD consists of four 1 in.-right cylindrical CLYC crystals, custom readout electronics including a suitable multi-window application specific integrated circuit (ASIC), battery pack, proprietary software, and Android-based tablet for high-level analysis and display. We herein describe the motivation of the work and engineering design of the unit, and we explain the software embedded in the core module and for radioisotope analysis. We report an operational range of tens of keV to 8.5 MeV with approximately 5.3% gamma energy resolution at 662 keV, thermal neutron detection efficiency of 10%, battery lifetime of up to 10 h, manageable rates of 20 kHz; further, we describe in greater detail time to identify specific gamma source setups.

  15. EDITORIAL: Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications

    NASA Astrophysics Data System (ADS)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-04-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10

  16. An electronic device to record consensual reflex in human pupil.

    PubMed

    Pinheiro, H M; Costa, R M; Camilo, E N R; Gang, Hua

    2015-01-01

    Examination of the pupil offers an objective evaluation of visual function as well as the vegetative pathways to the eye. This work proposes the development of an effective method and a portable device to test the consensual pupillary reflex. The first results demonstrate the success of a new device construction and methodology to record the consensual reflex with different stimulus, in a situation of complete blockage of light.

  17. Advanced upper limb prosthetic devices: implications for upper limb prosthetic rehabilitation.

    PubMed

    Resnik, Linda; Meucci, Marissa R; Lieberman-Klinger, Shana; Fantini, Christopher; Kelty, Debra L; Disla, Roxanne; Sasson, Nicole

    2012-04-01

    The number of catastrophic injuries caused by improvised explosive devices in the Afghanistan and Iraq Wars has increased public, legislative, and research attention to upper limb amputation. The Department of Veterans Affairs (VA) has partnered with the Defense Advanced Research Projects Agency and DEKA Integrated Solutions to optimize the function of an advanced prosthetic arm system that will enable greater independence and function. In this special communication, we examine current practices in prosthetic rehabilitation including trends in adoption and use of prosthetic devices, financial considerations, and the role of rehabilitation team members in light of our experiences with a prototype advanced upper limb prosthesis during a VA study to optimize the device. We discuss key challenges in the adoption of advanced prosthetic technology and make recommendations for service provision and use of advanced upper limb prosthetics. Rates of prosthetic rejection are high among upper limb amputees. However, these rates may be reduced with sufficient training by a highly specialized, multidisciplinary team of clinicians, and a focus on patient education and empowerment throughout the rehabilitation process. There are significant challenges emerging that are unique to implementing the use of advanced upper limb prosthetic technology, and a lack of evidence to establish clinical guidelines regarding prosthetic prescription and treatment. Finally, we make recommendations for future research to aid in the identification of best practices and development of policy decisions regarding insurance coverage of prosthetic rehabilitation. PMID:22464092

  18. Advanced upper limb prosthetic devices: implications for upper limb prosthetic rehabilitation.

    PubMed

    Resnik, Linda; Meucci, Marissa R; Lieberman-Klinger, Shana; Fantini, Christopher; Kelty, Debra L; Disla, Roxanne; Sasson, Nicole

    2012-04-01

    The number of catastrophic injuries caused by improvised explosive devices in the Afghanistan and Iraq Wars has increased public, legislative, and research attention to upper limb amputation. The Department of Veterans Affairs (VA) has partnered with the Defense Advanced Research Projects Agency and DEKA Integrated Solutions to optimize the function of an advanced prosthetic arm system that will enable greater independence and function. In this special communication, we examine current practices in prosthetic rehabilitation including trends in adoption and use of prosthetic devices, financial considerations, and the role of rehabilitation team members in light of our experiences with a prototype advanced upper limb prosthesis during a VA study to optimize the device. We discuss key challenges in the adoption of advanced prosthetic technology and make recommendations for service provision and use of advanced upper limb prosthetics. Rates of prosthetic rejection are high among upper limb amputees. However, these rates may be reduced with sufficient training by a highly specialized, multidisciplinary team of clinicians, and a focus on patient education and empowerment throughout the rehabilitation process. There are significant challenges emerging that are unique to implementing the use of advanced upper limb prosthetic technology, and a lack of evidence to establish clinical guidelines regarding prosthetic prescription and treatment. Finally, we make recommendations for future research to aid in the identification of best practices and development of policy decisions regarding insurance coverage of prosthetic rehabilitation.

  19. Radiation-Hardened Electronics for Advanced Communications Systems

    NASA Technical Reports Server (NTRS)

    Whitaker, Sterling

    2015-01-01

    Novel approach enables high-speed special-purpose processors Advanced reconfigurable and reprogrammable communication systems will require sub-130-nanometer electronics. Legacy single event upset (SEU) radiation-tolerant circuits are ineffective at speeds greater than 125 megahertz. In Phase I of this project, ICs, LLC, demonstrated new base-level logic circuits that provide SEU immunity for sub-130-nanometer high-speed circuits. In Phase II, the company developed an innovative self-restoring logic (SRL) circuit and a system approach that provides high-speed, SEU-tolerant solutions that are effective for sub-130-nanometer electronics scalable to at least 22-nanometer processes. The SRL system can be used in the design of NASA's next-generation special-purpose processors, especially reconfigurable communication processors.

  20. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.

    PubMed

    Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

    2009-01-01

    In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO(2) and C(2)H(4) using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

  1. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

    PubMed Central

    Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

    2009-01-01

    In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

  2. Scaling law of electron confinement in a zero beta polywell device

    NASA Astrophysics Data System (ADS)

    Gummersall, David V.; Carr, Matthew; Cornish, Scott; Kachan, Joe

    2013-10-01

    Orbital theory simulation was applied to an electron trap that uses a cube shaped magnetic cusp known as a Polywell device. The purpose of this device is to create a virtual cathode in order to achieve nuclear fusion using inertial electrostatic confinement. Analytical expressions of the electron confinement time and average position within the device were obtained in terms of the current in the field coils, the dimensions of the device, and the kinetic energy of the electrons. Comparisons with numerical simulations showed good agreement over a parameter range that spanned several orders of magnitude for the current. In addition, power loss from electrons exiting the trap was estimated in order to obtain minimum power requirement to maintain a virtual cathode within the device.

  3. Evaluation of advanced cooling therapy's esophageal cooling device for core temperature control.

    PubMed

    Naiman, Melissa; Shanley, Patrick; Garrett, Frank; Kulstad, Erik

    2016-05-01

    Managing core temperature is critical to patient outcomes in a wide range of clinical scenarios. Previous devices designed to perform temperature management required a trade-off between invasiveness and temperature modulation efficiency. The Esophageal Cooling Device, made by Advanced Cooling Therapy (Chicago, IL), was developed to optimize warming and cooling efficiency through an easy and low risk procedure that leverages heat transfer through convection and conduction. Clinical data from cardiac arrest, fever, and critical burn patients indicate that the Esophageal Cooling Device performs very well both in terms of temperature modulation (cooling rates of approximately 1.3°C/hour, warming of up to 0.5°C/hour) and maintaining temperature stability (variation around goal temperature ± 0.3°C). Physicians have reported that device performance is comparable to the performance of intravascular temperature management techniques and superior to the performance of surface devices, while avoiding the downsides associated with both. PMID:27043177

  4. Weak localization and electron–electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼T ‑0.4). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.

  5. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  6. 78 FR 69440 - Certain Electronic Imaging Devices; Notice of Request for Statements on the Public Interest

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-19

    ... COMMISSION Certain Electronic Imaging Devices; Notice of Request for Statements on the Public Interest AGENCY... Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during... public record for this investigation may be viewed on the Commission's electronic docket (EDIS) at...

  7. Novel characteristics of VUV insertion device beamlines at the Advanced Light Source

    SciTech Connect

    Warwick, T.; Heimann, P.

    1991-10-01

    The design of VUV beamlines for the Advanced Light Source is discussed. Features of the design serve to illustrate the careful attention required in order to preserve the performance of the low emittance ``third generation`` storage ring, operating with insertion devices. 11 refs.

  8. Novel characteristics of VUV insertion device beamlines at the Advanced Light Source

    SciTech Connect

    Warwick, T.; Heimann, P.

    1991-10-01

    The design of VUV beamlines for the Advanced Light Source is discussed. Features of the design serve to illustrate the careful attention required in order to preserve the performance of the low emittance third generation'' storage ring, operating with insertion devices. 11 refs.

  9. Hardening electronic devices against very high total dose radiation environments

    NASA Technical Reports Server (NTRS)

    Buchanan, B.; Shedd, W.; Roosild, S.; Dolan, R.

    1972-01-01

    The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.

  10. Modern Electronic Devices: An Increasingly Common Cause of Skin Disorders in Consumers.

    PubMed

    Corazza, Monica; Minghetti, Sara; Bertoldi, Alberto Maria; Martina, Emanuela; Virgili, Annarosa; Borghi, Alessandro

    2016-01-01

    : The modern conveniences and enjoyment brought about by electronic devices bring with them some health concerns. In particular, personal electronic devices are responsible for rising cases of several skin disorders, including pressure, friction, contact dermatitis, and other physical dermatitis. The universal use of such devices, either for work or recreational purposes, will probably increase the occurrence of polymorphous skin manifestations over time. It is important for clinicians to consider electronics as potential sources of dermatological ailments, for proper patient management. We performed a literature review on skin disorders associated with the personal use of modern technology, including personal computers and laptops, personal computer accessories, mobile phones, tablets, video games, and consoles. PMID:27172301

  11. Advanced Strained-Superlattice Photocathodes for Polarized Electron Sources

    SciTech Connect

    Dr. Aaron Moy

    2005-01-31

    Polarized electrons have been essential for high-energy parity-violating experiments and measurements of the nucleon spin structure. The availability of a polarized electron beam was crucial to the success of the Stanford Linear Collider (SLC) in achieving a precise measurement of the electroweak mixing angle, and polarized electron beams will be required for all future linear colliders. Polarized electrons are readily produced by GaAs photocathode sources. When a circularly polarized laser beam tuned to the bandgap minimum is directed to the negative-electron-affinity (NEA) surface of a GaAs crystal, longitudinally polarized electrons are emitted into vacuum. The electron polarization is easily reversed by reversing the laser polarization. The important properties of these photocathodes for accelerator applications are: degree of polarization of the extracted beam; ability to extract sufficient charge to meet accelerator pulse-structure requirements; efficiency and stability of operation; and absence of any asymmetries in the beam properties (charge, position, energy, etc.) upon polarization reversal. The performance of GaAs photocathodes has improved significantly since they were first introduced in 1978 [1]. The theoretical maximum polarization of 50% for natural GaAs was first exceeded in 1991 using the lattice mismatch of a thin InGaAs layer epitaxially grown over a GaAs substrate to generate a strain in the former that broke the natural degeneracy between the heavy- and light-hole valence bands [2]. Polarizations as high as 78% were produced for the SLC from photocathodes based on a thin GaAs epilayer grown on GaAsP [3,4]. After 10 years of experience with many cathode samples at several laboratories [5], the maximum polarization using the GaAs/GaAsP single strained-layer cathode remained limited to 80%, while the quantum efficiency (QE) for a 100-nm epilayer is only 0.3% or less. Two factors were known to limit the polarization of these cathodes: (1) the

  12. Advanced Diagnostics for Developing High-Brightness Electron Beams

    SciTech Connect

    Ben-Zvi, I.; Babzien, M.; Malone, R.; Wang, X.-J.; Yakimenko, V.

    1998-11-24

    The production of high-brightness particle beams calls for the development of advanced beam diagnostics. High brightness beams, meaning beams with a high density in phase space, are important for many applications, such as short-wavelength Free-Electron Lasers and advanced accelerator systems. A diagnostic that provides detailed information on the density distribution of the electron bunch in multi-dimensional phase-space is an essential tool for obtaining small emittance at a high charge. This diagnostic system has been developed at Brookhaven National Laboratory. One component of the system is the measurement of a slice emittance which provides a measurement of transverse beam properties (such as emittance) as a function of the longitudinal position. Changing the laser pulse profile of a photocathode RF gun has been suggested as one way to achieve non-linear emittance compensation and improve the brightness and that can be diagnosed by the slice emittance system. The other element of the diagnostic is the tomographic reconstruction of the transverse phase. In our work we give special attention to the accuracy of the phase space reconstruction and present an analysis using a transport line with nine focusing magnets and techniques to control the optical functions and phases. This high precision phase space tomography together with the ability to modify the radial charge distribution of the electron beam presents an opportunity to improve the emittance and apply non-linear radial emittance corrections. Combining the slice emittance and tomography diagnostics leads to an unprecedented visualization of phase space distributions in 5 dimensional phase-space and an opportunity to perform high-order emittance corrections. This should lead to great improvements in the beam brightness.

  13. ADVANCED DIAGNOSTICS FOR DEVELOPING HIGH-BRIGHTNESS ELECTRON BEAMS.

    SciTech Connect

    BEN-ZVI,I.

    1998-11-24

    The production of high-brightness particle beams calls for the development of advanced beam diagnostics. High brightness beams, meaning beams with a high density in phase space, are important for many applications, such as short-wavelength Free-Electron Lasers and advanced accelerator systems. A diagnostic that provides detailed information on the density distribution of the electron bunch in multi-dimensional phase-space is an essential tool for obtaining small emittance at a high charge. This diagnostic system has been developed at Brookhaven National Laboratory. One component of the system is the measurement of a slice emittance which provides a measurement of transverse beam properties (such as emittance) as a function of the longitudinal position. Changing the laser pulse profile of a photocathode RF gun has been suggested as one way to achieve non-linear emittance compensation and improve the brightness and that can be diagnosed by the slice emittance system. The other element of the diagnostic is the tomographic reconstruction of the transverse phase. In our work we give special attention to the accuracy of the phase space reconstruction and present an analysis using a transport line with nine focusing magnets and techniques to control the optical functions and phases. This high precision phase space tomography together with the ability to modify the radial charge distribution of the electron beam presents an opportunity to improve the emittance and apply non-linear radial emittance corrections. Combining the slice emittance and tomography diagnostics leads to an unprecedented visualization of phase space distributions in 5 dimensional phase-space and an opportunity to perform high-order emittance corrections. This should lead to great improvements in the beam brightness.

  14. Exploring the Electronic Landscape at Interfaces and Junctions in Semiconductor Nanowire Devices with Subsurface Local Probing of Carrier Dynamics

    NASA Astrophysics Data System (ADS)

    McGuckin, Terrence

    The solid state devices that are pervasive in our society, are based on building blocks composed of interfaces between materials and junctions that manipulate how charge carriers behave in a device. As the dimensions of these devices are reduced to the nanoscale, surfaces and interfaces play a larger role in the behavior of carriers in devices and must be thoroughly investigated to understand not only the material properties but how these materials interact. Separating the effects of these different building blocks is a challenge, as most testing methods measure the performance of the whole device. Semiconductor nanowires represent an excellent test system to explore the limits of size and novel device structures. The behavior of charge carriers in semiconductor nanowire devices under operational conditions is investigated using local probing technique electron beam induced current (EBIC). The behavior of locally excited carriers are driven by the forces of drift, from electric fields within a device at junctions, surfaces, contacts and, applied voltage bias, and diffusion. This thesis presents the results of directly measuring these effects spatially with nanometer resolution, using EBIC in Ge, Si, and complex heterostructure GaAs/AlGaAs nanowire devices. Advancements to the EBIC technique, have pushed the resolution from tens of nanometers down to 1 to 2 nanometers. Depth profiling and tuning of the interaction volume allows for the separating the signal originating from the surface and the interior of the nanowire. Radial junctions and variations in bands can now be analyzed including core/shell hetero-structures. This local carrier probing reveals a number of surprising behaviors; Most notably, directly imaging the evolution of surface traps filling with electrons causing bandbending at the surface of Ge nanowires that leads to an enhancement in the charge separation of electrons and holes, and extracting different characteristic lengths from GaAs and AlGaAs in

  15. Crossed Andreev reflection versus electron transfer in three-terminal graphene devices

    NASA Astrophysics Data System (ADS)

    Haugen, Håvard; Huertas-Hernando, Daniel; Brataas, Arne; Waintal, Xavier

    2010-05-01

    We investigate the transport properties of three-terminal graphene devices, where one terminal is superconducting and two are normal metals. The terminals are connected by nanoribbons. Electron transfer (ET) and crossed Andreev reflection (CAR) are identified via the nonlocal signal between the two normal terminals. Analytical expressions for ET and CAR in symmetric devices are found. We compute ET and CAR numerically for asymmetric devices. ET dominates CAR in symmetric devices, but CAR can dominate ET in asymmetric devices, where only the zero-energy modes of the zigzag nanoribbons contribute to the transport.

  16. Silicon microbench heater elements for packaging opto-electronic devices

    SciTech Connect

    Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

    1995-09-01

    Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

  17. Authentication of Radio Frequency Identification Devices Using Electronic Characteristics

    ERIC Educational Resources Information Center

    Chinnappa Gounder Periaswamy, Senthilkumar

    2010-01-01

    Radio frequency identification (RFID) tags are low-cost devices that are used to uniquely identify the objects to which they are attached. Due to the low cost and size that is driving the technology, a tag has limited computational capabilities and resources. This limitation makes the implementation of conventional security protocols to prevent…

  18. The transport properties of the molecular-scale B2C and BC3 electronic devices

    NASA Astrophysics Data System (ADS)

    Li, Guiqin; Li, Runqin

    2012-09-01

    The transport properties of the molecular-scale B2C and BC3 electronic devices are investigated with an ab initio method combined with a nonequilibrium Green function technique. The effects of different BC graphenes and ribbon lengths on the transport properties of the devices are significant. The results show that the devices with different BC graphenes and sizes have unusual transmission coefficients, which leads to special current transport mechanisms for the devices. Notably, the current strength of the device with the shortest ribbon length is the largest in three B2C devices, but the current strength of the device with the shortest ribbon length is the smallest for BC3 device.

  19. Modulated Degradation of Transient Electronic Devices through Multilayer Silk Fibroin Pockets.

    PubMed

    Brenckle, Mark A; Cheng, Huanyu; Hwang, Sukwon; Tao, Hu; Paquette, Mark; Kaplan, David L; Rogers, John A; Huang, Yonggang; Omenetto, Fiorenzo G

    2015-09-16

    The recent introduction of transient, bioresorbable electronics into the field of electronic device design offers promise for the areas of medical implants and environmental monitors, where programmed loss of function and environmental resorption are advantageous characteristics. Materials challenges remain, however, in protecting the labile device components from degradation at faster than desirable rates. Here we introduce an indirect passivation strategy for transient electronic devices that consists of encapsulation in multiple air pockets fabricated from silk fibroin. This approach is investigated through the properties of silk as a diffusional barrier to water penetration, coupled with the degradation of magnesium-based devices in humid air. Finally, silk pockets are demonstrated to be useful for controlled modulation of device lifetime. This approach may provide additional future opportunities for silk utility due to the low immunogenicity of the material and its ability to stabilize labile biotherapeutic dopants.

  20. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    SciTech Connect

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  1. 78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-24

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade...

  2. 78 FR 116 - Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-02

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: International Trade Commission. ACTION: Notice....

  3. 78 FR 73563 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-06

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products... in Default; Termination of Investigation AGENCY: U.S. International Trade Commission. ACTION:...

  4. 77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-15

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission....

  5. 77 FR 31875 - Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-30

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice....

  6. 77 FR 32995 - Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION:...

  7. Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

    NASA Astrophysics Data System (ADS)

    Ward, R. R.; Dawson, W. J.; Zhu, L.; Kirschman, R. K.; Niu, G.; Nelms, R. M.; Mueller, O.; Hennessy, M. J.; Mueller, E. K.

    2006-03-01

    It is predicted that systems for electrical power generation, conversion and distribution on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. In view of this, we have taken initial steps in the investigation and development of SiGe semiconductor devices for cryogenic power applications. We have (1) simulated, designed, fabricated and characterized SiGe power diodes, and (2) evaluated these SiGe diodes in cryogenic power converters. Our target low-end temperature is 55 K, although we characterize devices and circuits down to approximately 30 K. We have demonstrated, experimentally, favorable characteristics for SiGe power diodes and have shown higher conversion efficiency compared to equivalent Si power diodes in a 100-W boost switching DC-DC power converter, over an ambient temperature range of 300 K down to approximately 30 K.

  8. Luminescent coupling in planar opto-electronic devices

    SciTech Connect

    Wilkins, Matthew Valdivia, Christopher E.; Gabr, Ahmed M.; Hinzer, Karin; Masson, Denis; Fafard, Simon

    2015-10-14

    Effects of luminescent coupling are observed in monolithic 5 V, five-junction GaAs phototransducers. Power conversion efficiency was measured at 61.6% ± 3% under the continuous, monochromatic illumination for which they were designed. Modeling shows that photon recycling can account for up to 350 mV of photovoltage in these devices. Drift-diffusion based simulations including a luminescent coupling term in the continuity equation show a broadening of the internal quantum efficiency curve which agrees well with experimental measurements. Luminescent coupling is shown to expand the spectral bandwidth of the phototransducer by a factor of at least 3.5 for devices with three or more junctions, even in cases where multiple absorption/emission events are required to transfer excess carriers into the limiting junction. We present a detailed description of the novel luminescent coupling modeling technique used to predict these performance enhancements.

  9. Overview of multimedia content protection in consumer electronics devices

    NASA Astrophysics Data System (ADS)

    Eskicioglu, Ahmet M.; Delp, Edward J., III

    2000-05-01

    A digital home network is a cluster of digital audio/visual (A/V) devices including set-top boxes, TVs, VCRs, DVD players, and general-purpose computing devices such as personal computers. The network may receive copyrighted digital multimedia content from a number of sources. This content may be broadcast via satellite or terrestrial systems, transmitted by cable operators, or made available as prepackaged media (e.g., a digital tape or a digital video disc). Before releasing their content for distribution, the content owners may require protection by specifying access conditions. Once the content is delivered to the consumer, it moves across home the network until it reaches its destination where it is stored or displayed. A copy protection system is needed to prevent unauthorized access to bit streams in transmission from one A/V device to another or while it is in storage on magnetic or optical media. Recently, two fundamental groups of technologies, encryption and watermarking, have been identified for protecting copyrighted digital multimedia content. This paper is an overview of the work done for protecting content owners' investment in intellectual property.

  10. Testing methods and techniques: Testing electrical and electronic devices: A compilation

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The methods, techniques, and devices used in testing various electrical and electronic apparatus are presented. The items described range from semiconductor package leak detectors to automatic circuit analyzer and antenna simulators for system checkout. In many cases the approaches can result in considerable cost savings and improved quality control. The testing of various electronic components, assemblies, and systems; the testing of various electrical devices; and the testing of cables and connectors are explained.

  11. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

    SciTech Connect

    Liu, Dong; Sun, Huarui; Pomeroy, James W.; Kuball, Martin; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.

    2015-12-21

    The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

  12. Device for the removal of sulfur dioxide from exhaust gas by pulsed energization of free electrons

    SciTech Connect

    Mizuno, A.; Clements, J.S.; Davis, R.H.

    1984-01-01

    The performance of a new device using pulsed streamer corona for the removal of sulfur dioxide from humid air has been evaluated. The pulsed streamer corona produced free electrons which enhance gas-phase chemical reactions, and convert SO/sub 2/ to sulfuric acid mist. The SO/sub 2/ removal efficiency was compared with that of the electron-beam flue-gas treatment process. The comparison demonstrates the advantage of the novel device.

  13. Sleep and use of electronic devices in adolescence: results from a large population-based study

    PubMed Central

    Hysing, Mari; Pallesen, Ståle; Stormark, Kjell Morten; Jakobsen, Reidar; Lundervold, Astri J; Sivertsen, Børge

    2015-01-01

    Objectives Adolescents spend increasingly more time on electronic devices, and sleep deficiency rising in adolescents constitutes a major public health concern. The aim of the present study was to investigate daytime screen use and use of electronic devices before bedtime in relation to sleep. Design A large cross-sectional population-based survey study from 2012, the youth@hordaland study, in Hordaland County in Norway. Setting Cross-sectional general community-based study. Participants 9846 adolescents from three age cohorts aged 16–19. The main independent variables were type and frequency of electronic devices at bedtime and hours of screen-time during leisure time. Outcomes Sleep variables calculated based on self-report including bedtime, rise time, time in bed, sleep duration, sleep onset latency and wake after sleep onset. Results Adolescents spent a large amount of time during the day and at bedtime using electronic devices. Daytime and bedtime use of electronic devices were both related to sleep measures, with an increased risk of short sleep duration, long sleep onset latency and increased sleep deficiency. A dose–response relationship emerged between sleep duration and use of electronic devices, exemplified by the association between PC use and risk of less than 5 h of sleep (OR=2.70, 95% CI 2.14 to 3.39), and comparable lower odds for 7–8 h of sleep (OR=1.64, 95% CI 1.38 to 1.96). Conclusions Use of electronic devices is frequent in adolescence, during the day as well as at bedtime. The results demonstrate a negative relation between use of technology and sleep, suggesting that recommendations on healthy media use could include restrictions on electronic devices. PMID:25643702

  14. Current Management of Cardiac Implantable Electronic Device Infections by Infectious Disease Specialists.

    PubMed

    Liang, Stephen Y; Beekmann, Susan E; Polgreen, Philip M; Warren, David K

    2016-10-15

    Management guidelines for cardiac implantable electronic device infections exist, but practice patterns of infectious disease (ID) specialists are not well known. We found that while many ID specialist practices mirror existing guidelines, a combination of complete device removal and prolonged antimicrobial therapy is favored when Staphylococcus aureus is involved.

  15. 78 FR 32689 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-31

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof..., Including Mobile Phones and Components Thereof, DN 2958; the Commission is soliciting comments on any public... communications devices, including mobile phones and components thereof. The complaint names as respondents...

  16. A Master Trainer Class for Professionals in Teaching the UltraCane Electronic Travel Device

    ERIC Educational Resources Information Center

    Penrod, William; Corbett, Michael D.; Blasch, Bruce

    2005-01-01

    Electronic travel devices are used to transform information about the environment that would normally be perceived through the visual sense into a form that can be perceived by people who are blind or have low vision through another sense (Blasch, Long, & Griffin-Shirley, 1989). They are divided into two broad categories: primary devices and…

  17. Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.

  18. 75 FR 25763 - Addition to the List of Validated End-Users: Advanced Micro Devices China, Inc.

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-10

    ...: Advanced Micro Devices China, Inc. AGENCY: Bureau of Industry and Security, Commerce. ACTION: Final rule... FR 33646) by creating a new authorization for ``validated end-users'' located in eligible... three eligible facilities are as follows: Validated End-User Advanced Micro Devices China, Inc....

  19. Optical tracing of multiple charges in single-electron devices

    NASA Astrophysics Data System (ADS)

    Faez, Sanli; van der Molen, Sense Jan; Orrit, Michel

    2014-11-01

    Single molecules that exhibit narrow optical transitions at cryogenic temperatures can be used as local electric-field sensors. We derive the single-charge sensitivity of aromatic organic dye molecules, based on quantum mechanical considerations. Through numerical modeling, we demonstrate that by using currently available technologies it is possible to optically detect charging events in a granular network with a sensitivity better than 10-5e /√{Hz } and track positions of multiple electrons, simultaneously, with nanometer spatial resolution. Our results pave the way for minimally invasive optical inspection of electronic and spintronic nanodevices and building hybrid optoelectronic interfaces that function at both single-photon and single-electron levels.

  20. Advanced analytical electron microscopy for alkali-ion batteries

    DOE PAGES

    Qian, Danna; Ma, Cheng; Meng, Ying Shirley; More, Karren; Chi, Miaofang

    2015-01-01

    Lithium-ion batteries are a leading candidate for electric vehicle and smart grid applications. However, further optimizations of the energy/power density, coulombic efficiency and cycle life are still needed, and this requires a thorough understanding of the dynamic evolution of each component and their synergistic behaviors during battery operation. With the capability of resolving the structure and chemistry at an atomic resolution, advanced analytical transmission electron microscopy (AEM) is an ideal technique for this task. The present review paper focuses on recent contributions of this important technique to the fundamental understanding of the electrochemical processes of battery materials. A detailed reviewmore » of both static (ex situ) and real-time (in situ) studies will be given, and issues that still need to be addressed will be discussed.« less