Science.gov

Sample records for advanced integrated circuits

  1. SEU In An Advanced Bipolar Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Zoutendyk, John A.; Secrest, Elaine C.; Berndt, Dale F.

    1989-01-01

    Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.

  2. Monolithic microwave integrated circuit technology for advanced space communication

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Romanofsky, Robert R.

    1988-01-01

    Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

  3. Lithography for enabling advances in integrated circuits and devices.

    PubMed

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing. PMID:22802500

  4. Advances in integrated photonic circuits for packet-switched interconnection

    NASA Astrophysics Data System (ADS)

    Williams, Kevin A.; Stabile, Ripalta

    2014-03-01

    Sustained increases in capacity and connectivity are needed to overcome congestion in a range of broadband communication network nodes. Packet routing and switching in the electronic domain are leading to unsustainable energy- and bandwidth-densities, motivating research into hybrid solutions: optical switching engines are introduced for massive-bandwidth data transport while the electronic domain is clocked at more modest GHz rates to manage routing. Commercially-deployed optical switching engines using MEMS technologies are unwieldy and too slow to reconfigure for future packet-based networking. Optoelectronic packet-compliant switch technologies have been demonstrated as laboratory prototypes, but they have so far mostly used discretely pigtailed components, which are impractical for control plane development and product assembly. Integrated photonics has long held the promise of reduced hardware complexity and may be the critical step towards packet-compliant optical switching engines. Recently a number of laboratories world-wide have prototyped optical switching circuits using monolithic integration technology with up to several hundreds of integrated optical components per chip. Our own work has focused on multi-input to multi-output switching matrices. Recently we have demonstrated 8×8×8λ space and wavelength selective switches using gated cyclic routers and 16×16 broadband switching chips using monolithic multi-stage networks. We now operate these advanced circuits with custom control planes implemented with FPGAs to explore real time packet routing in multi-wavelength, multi-port test-beds. We review our contributions in the context of state of the art photonic integrated circuit technology and packet optical switching hardware demonstrations.

  5. Single event soft error in advanced integrated circuit

    NASA Astrophysics Data System (ADS)

    Yuanfu, Zhao; Suge, Yue; Xinyuan, Zhao; Shijin, Lu; Qiang, Bian; Liang, Wang; Yongshu, Sun

    2015-11-01

    As technology feature size decreases, single event upset (SEU), and single event transient (SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU) (or multi cell upset) effects, digital single event transient (DSET) and analogue single event transient (ASET) cause serious problems for advanced integrated circuits (ICs) applied in a radiation environment and have become a pressing issue. To face this challenge, a lot of work has been put into the single event soft error mechanism and mitigation schemes. This paper presents a review of SEU and SET, including: a brief historical overview, which summarizes the historical development of the SEU and SET since their first observation in the 1970's; effects prominent in advanced technology, which reviews the effects such as MBU, MSET as well as SET broadening and quenching with the influence of temperature, device structure etc.; the present understanding of single event soft error mechanisms, which review the basic mechanism of single event generation including various component of charge collection; and a discussion of various SEU and SET mitigation schemes divided as circuit hardening and layout hardening that could help the designer meet his goals.

  6. Advanced polymer systems for optoelectronic integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Stengel, Kelly M. T.; Shacklette, Lawrence W.; Norwood, Robert A.; Xu, Chengzeng; Wu, Chengjiu; Yardley, James T.

    1997-01-01

    An advanced versatile low-cost polymeric waveguide technology is proposed for optoelectronic integrated circuit applications. We have developed high-performance organic polymeric materials that can be readily made into both multimode and single-mode optical waveguide structures of controlled numerical aperture (NA) and geometry. These materials are formed from highly crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, toughness, loss, and stability against yellowing and humidity. These monomers are intermiscible, providing for precise adjustment of the refractive index from 1.30 to 1.60. Waveguides are formed photolithographically, with the liquid monomer mixture polymerizing upon illumination in the UV via either mask exposure or laser direct-writing. A wide range of rigid and flexible substrates can be used, including glass, quartz, oxidized silicon, glass-filled epoxy printed circuit board substrate, and flexible polyimide film. We discuss the use of these materials on chips and on multi-chip modules (MCMs), specifically in transceivers where we adaptively produced waveguides on vertical-cavity surface-emitting lasers (VCSELs) embedded in transmitter MCMs and on high- speed photodetector chips in receiver MCMs. Light coupling from and to chips is achieved by cutting 45 degree mirrors using excimer laser ablation. The fabrication of our polymeric structures directly on the modules provides for stability, ruggedness, and hermeticity in packaging.

  7. Three-Dimensional Integration Technology for Advanced Focal Planes and Integrated Circuits

    SciTech Connect

    Keast, Craig

    2007-02-28

    Over the last five years MIT Lincoln Laboratory (MIT-LL) has developed a three-dimensional (3D) circuit integration technology that exploits the advantages of silicon-on-insulator (SOI) technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circuit wafers. Advanced focal plane arrays have been the first applications to exploit the benefits of this 3D integration technology because the massively parallel information flow present in 2D imaging arrays maps very nicely into a 3D computational structure as information flows from circuit-tier to circuit-tier in the z-direction. To date, the MIT-LL 3D integration technology has been used to fabricate four different focal planes including: a 2-tier 64 x 64 imager with fully parallel per-pixel A/D conversion; a 3-tier 640 x 480 imager consisting of an imaging tier, an A/D conversion tier, and a digital signal processing tier; a 2-tier 1024 x 1024 pixel, 4-side-abutable imaging modules for tiling large mosaic focal planes, and a 3-tier Geiger-mode avalanche photodiode (APD) 3-D LIDAR array, using a 30 volt APD tier, a 3.3 volt CMOS tier, and a 1.5 volt CMOS tier. Recently, the 3D integration technology has been made available to the circuit design research community through DARPA-sponsored Multiproject fabrication runs. The first Multiproject Run (3DL1) completed fabrication in early 2006 and included over 30 different circuit designs from 21 different research groups. 3D circuit concepts explored in this run included stacked memories, field programmable gate arrays (FPGAs), and mixed-signal circuits. The second Multiproject Run (3DM2) is currently in fabrication and includes particle detector readouts designed by Fermilab. This talk will provide a brief overview of MIT-LL's 3D-integration process, discuss some of the focal plane applications where the technology is being applied, and provide a summary of some of the Multiproject Run circuit results.

  8. Advanced integration schemes for high-functionality/high-performance photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Raring, James W.; Sysak, Matthew N.; Tauke-Pedretti, Anna; Dummer, Matthew; Skogen, Erik J.; Barton, Jonathon S.; DenBaars, S. P.; Coldren, Larry A.

    2006-02-01

    The evolution of optical communication systems has facilitated the required bandwidth to meet the increasing data rate demands. However, as the peripheral technologies have progressed to meet the requirements of advanced systems, an abundance of viable solutions and products have emerged. The finite market for these products will inevitably force a paradigm shift upon the communications industry. Monolithic integration is a key technology that will facilitate this shift as it will provide solutions at low cost with reduced power dissipation and foot-print in the form of highly functional optical components based on photonic integrated circuits (PICs). In this manuscript, we discuss the advantages, potential applications, and challenges of photonic integration. After a brief overview of various integration techniques, we present our novel approaches to increase the performance of the individual components comprising highly functional PICs.

  9. Photonic Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Merritt, Scott; Krainak, Michael

    2016-01-01

    Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

  10. Linear integrated circuits

    NASA Astrophysics Data System (ADS)

    Young, T.

    This book is intended to be used as a textbook in a one-semester course at a variety of levels. Because of self-study features incorporated, it may also be used by practicing electronic engineers as a formal and thorough introduction to the subject. The distinction between linear and digital integrated circuits is discussed, taking into account digital and linear signal characteristics, linear and digital integrated circuit characteristics, the definitions for linear and digital circuits, applications of digital and linear integrated circuits, aspects of fabrication, packaging, and classification and numbering. Operational amplifiers are considered along with linear integrated circuit (LIC) power requirements and power supplies, voltage and current regulators, linear amplifiers, linear integrated circuit oscillators, wave-shaping circuits, active filters, DA and AD converters, demodulators, comparators, instrument amplifiers, current difference amplifiers, analog circuits and devices, and aspects of troubleshooting.

  11. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  12. Leveraging advanced data analytics, machine learning, and metrology models to enable critical dimension metrology solutions for advanced integrated circuit nodes

    NASA Astrophysics Data System (ADS)

    Rana, Narender; Zhang, Yunlin; Kagalwala, Taher; Bailey, Todd

    2014-10-01

    Integrated circuit (IC) technology is changing in multiple ways: 193i to extreme ultraviolet exposure, planar to nonplanar device architecture, from single exposure lithography to multiple exposure and directed self-assembly (DSA) patterning, and so on. Critical dimension (CD) control requirement is becoming stringent and more exhaustive: CD and process windows are shrinking, three-sigma CD control of <2 nm is required in complex geometries, and a metrology uncertainty of <0.2 nm is required to achieve the target CD control for advanced IC nodes (e.g., 14, 10, and 7 nm nodes). There are fundamental capability and accuracy limits in all the metrology techniques that are detrimental to the success of advanced IC nodes. Reference or physical CD metrology is provided by atomic force microscopy (CD-AFM) and TEM while workhorse metrology is provided by CD-SEM, scatterometry, and model-based infrared reflectrometry (MBIR). Precision alone is not sufficient for moving forward. No single technique is sufficient to ensure the required accuracy of patterning. The accuracy of CD-AFM is ˜1 nm and the precision in TEM is poor due to limited statistics. CD scanning electron microscopy (CD-SEM), scatterometry, and MBIR need to be calibrated by reference measurements for ensuring the accuracy of patterned CDs and patterning models. There is a dire need for a measurement with <0.5 nm accuracy and the industry currently does not have that capability with inline measurements. Being aware of the capability gaps for various metrology techniques, we have employed data processing techniques and predictive data analytics, along with patterning simulation and metrology models and data integration techniques to selected applications demonstrating the potential solution and practicality of such an approach to enhance CD metrology accuracy. Data from multiple metrology techniques have been analyzed in multiple ways to extract information with associated uncertainties and integrated to extract

  13. Bioluminescent bioreporter integrated circuit

    DOEpatents

    Simpson, Michael L.; Sayler, Gary S.; Paulus, Michael J.

    2000-01-01

    Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for environmental pollutant detection, oil exploration, drug discovery, industrial process control, and hazardous chemical monitoring.

  14. Integrated circuit reliability testing

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G. (Inventor); Sayah, Hoshyar R. (Inventor)

    1990-01-01

    A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit.

  15. Integrated circuit reliability testing

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G. (Inventor); Sayah, Hoshyar R. (Inventor)

    1988-01-01

    A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit.

  16. Pulse advancement and delay in an integrated-optical two-port ring-resonator circuit: direct experimental observations.

    PubMed

    Uranus, H P; Zhuang, L; Roeloffzen, C G H; Hoekstra, H J W M

    2007-09-01

    We report experimental observations of the negative-group-velocity (v(g)) phenomenon in an integrated-optical two-port ring-resonator circuit. We demonstrate that when the v(g) is negative, the (main) peak of output pulse appears earlier than the peak of a reference pulse, while for a positive v(g), the situation is the other way around. We observed that a pulse splitting phenomenon occurs in the neighborhood of the critical-coupling point. This pulse splitting limits the maximum achievable delay and advancement of a single device as well as facilitating a smooth transition from highly advanced to highly delayed pulse, and vice versa, across the critical-coupling point. PMID:17767325

  17. Biophotonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Cohen, Daniel A.; Nolde, Jill A.; Wang, Chad S.; Skogen, Erik J.; Rivlin, A.; Coldren, Larry A.

    2004-12-01

    Biosensors rely on optical techniques to obtain high sensitivity and speed, but almost all biochips still require external light sources, optics, and detectors, which limits the widespread use of these devices. The optoelectronics technology base now allows monolithic integration of versatile optical sources, novel sensing geometries, filters, spectrometers, and detectors, enabling highly integrated chip-scale sensors. We discuss biophotonic integrated circuits built on both GaAs and InP substrates, incorporating widely tunable lasers, novel evanescent field sensing waveguides, heterodyne spectrometers, and waveguide photodetectors, suitable for high sensitivity transduction of affinity assays.

  18. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  19. Integrated Circuit Immunity

    NASA Technical Reports Server (NTRS)

    Sketoe, J. G.; Clark, Anthony

    2000-01-01

    This paper presents a DOD E3 program overview on integrated circuit immunity. The topics include: 1) EMI Immunity Testing; 2) Threshold Definition; 3) Bias Tee Function; 4) Bias Tee Calibration Set-Up; 5) EDM Test Figure; 6) EMI Immunity Levels; 7) NAND vs. and Gate Immunity; 8) TTL vs. LS Immunity Levels; 9) TP vs. OC Immunity Levels; 10) 7805 Volt Reg Immunity; and 11) Seventies Chip Set. This paper is presented in viewgraph form.

  20. ELECTRONIC INTEGRATING CIRCUIT

    DOEpatents

    Englemann, R.H.

    1963-08-20

    An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

  1. Integrated circuit cell library

    NASA Technical Reports Server (NTRS)

    Whitaker, Sterling R. (Inventor); Miles, Lowell H. (Inventor)

    2005-01-01

    According to the invention, an ASIC cell library for use in creation of custom integrated circuits is disclosed. The ASIC cell library includes some first cells and some second cells. Each of the second cells includes two or more kernel cells. The ASIC cell library is at least 5% comprised of second cells. In various embodiments, the ASIC cell library could be 10% or more, 20% or more, 30% or more, 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more comprised of second cells.

  2. Thermionic integrated circuit program: Final report

    SciTech Connect

    Wilde, D.K.; Lynn, D.K.; Hamilton, D.

    1988-05-01

    This report describes the development of an operational amplifier using radiation hardened Thermionic Integrated Circuits (TICs). The report is written as a tutorial to cover all aspects of the fabrication process and circuit development as well as the process and circuit modifications required to meet the integration requirements of the operational amplifier. Recent experimental results are discussed in which both devices and test circuit data are compared to theoretical computer code predictions. The development of compatible high-temperature thin-film resistors is also presented. Because the project is being terminated prior to the completion of the amplifier, suggestions are made for additional advance development.

  3. Development of 3D integrated circuits for HEP

    SciTech Connect

    Yarema, R.; /Fermilab

    2006-09-01

    Three dimensional integrated circuits are well suited to improving circuit bandwidth and increasing effective circuit density. Recent advances in industry have made 3D integrated circuits an option for HEP. The 3D technology is discussed in this paper and several examples are shown. Design of a 3D demonstrator chip for the ILC is presented.

  4. Integrated coherent matter wave circuits

    NASA Astrophysics Data System (ADS)

    Ryu, C.; Boshier, M. G.

    2015-09-01

    An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. Here we report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through their electric polarizability. The source of coherent matter waves is a Bose-Einstein condensate (BEC). We launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry.

  5. Postirradiation Effects In Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Shaw, David C.; Barnes, Charles E.

    1993-01-01

    Two reports discuss postirradiation effects in integrated circuits. Presents examples of postirradiation measurements of performances of integrated circuits of five different types: dual complementary metal oxide/semiconductor (CMOS) flip-flop; CMOS analog multiplier; two CMOS multiplying digital-to-analog converters; electrically erasable programmable read-only memory; and semiconductor/oxide/semiconductor octal buffer driver.

  6. Potential for integrated optical circuits in advanced aircraft with fiber optic control and monitoring systems

    NASA Technical Reports Server (NTRS)

    Baumbick, Robert

    1991-01-01

    The current Fiber Optic Control System Integration (FOCSI) program is reviewed and the potential role of IOCs in FOCSI applications is described. The program is intended for building, environmentally testing, and demonstrating operation in piggyback flight tests (no active control with optical sensors) of a representative sensor system for propulsion and flight control. The optical sensor systems are to be designed to fit alongside the bill-of-materials sensors for comparison. The sensors are to be connected to electrooptic architecture cards which will contain the optical sources and detectors to recover and process the modulated optical signals. The FOCSI program is to collect data on the behavior of passive optical sensor systems in a flight environment and provide valuable information on installation amd maintenance problems for this technology, as well as component survivability (light sources, connectors, optical fibers, etc.).

  7. Recent Advances In Cryogenic Monolithic Millimeter-wave Integrated Circuit (MMIC) Low Noise Amplifiers For Astrophysical Observations

    NASA Astrophysics Data System (ADS)

    Samoska, Lorene; Church, S.; Cleary, K.; Gaier, T.; Gawande, R.; Kangaslahti, P.; Lawrence, C.; Readhead, A.; Reeves, R.; Seiffert, M.; Sieth, M.; Varonen, M.; Voll, P.

    2012-05-01

    In this work, we discuss advances in high electron mobility transistor (HEMT) low noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) for use as front end amplifiers in ultra-low noise receivers. Applications include focal plane arrays for studying the polarization of the cosmic microwave background radiation and foreground separation, receiver arrays for molecular spectroscopy, and high redshift CO surveys for probing the epoch of reionization. Recent results and a summary of best indium phosphide (InP) low noise amplifier data will be presented. Cryogenic MMIC LNAs using state-of-the-art InP technology have achieved record performance, and have advantages over other detectors in the 30-300 GHz range. InP MMIC LNAs operate at room temperature and may achieve near-optimum performance at 20K, a temperature readily achieved with modern cryo-coolers. In addition, wide-bandwidth LNAs are suitable for heterodyne applications as well as direct detector applications. Recent results include Ka-band MMICs with 15K noise temperature performance, and Q-Band MMICs with on-wafer measured cryogenic noise of 12K at 38 GHz. In addition, W-Band amplifiers with 25K noise temperature at 95 GHz will be presented, as well as wide-band LNAs with noise temperature below 45K up to 116 GHz. At higher frequencies, we will discuss progress on MMIC LNAs and receiver modules in G-Band (140-220 GHz), where our group has achieved less than 60K receiver noise temperature at 166 GHz. We will address extending the high performance of these MMIC LNAs to even higher frequencies for spectroscopic surveys, and make projections on future performance given current trends. These MMIC amplifiers can play a key role in future ground-based and space-based instruments for astrophysical observations.

  8. Electronic design with integrated circuits

    NASA Astrophysics Data System (ADS)

    Comer, D. J.

    The book is concerned with the application of integrated circuits and presents the material actually needed by the system designer to do an effective job. The operational amplifier (op amp) is discussed, taking into account the electronic amplifier, the basic op amp, the practical op amp, analog applications, and digital applications. Digital components are considered along with combinational logic, digital subsystems, the microprocessor, special circuits, communications, and integrated circuit building blocks. Attention is given to logic gates, logic families, multivibrators, the digital computer, digital methods, communicating with a computer, computer organization, register and timing circuits for data transfer, arithmetic circuits, memories, the microprocessor chip, the control unit, communicating with the microprocessor, examples of microprocessor architecture, programming a microprocessor, the voltage-controlled oscillator, the phase-locked loop, analog-to-digital conversion, amplitude modulation, frequency modulation, pulse and digital transmission, the semiconductor diode, the bipolar transistor, and the field-effect transistor.

  9. Variational integrators for electric circuits

    SciTech Connect

    Ober-Blöbaum, Sina; Tao, Molei; Cheng, Mulin; Owhadi, Houman; Marsden, Jerrold E.

    2013-06-01

    In this contribution, we develop a variational integrator for the simulation of (stochastic and multiscale) electric circuits. When considering the dynamics of an electric circuit, one is faced with three special situations: 1. The system involves external (control) forcing through external (controlled) voltage sources and resistors. 2. The system is constrained via the Kirchhoff current (KCL) and voltage laws (KVL). 3. The Lagrangian is degenerate. Based on a geometric setting, an appropriate variational formulation is presented to model the circuit from which the equations of motion are derived. A time-discrete variational formulation provides an iteration scheme for the simulation of the electric circuit. Dependent on the discretization, the intrinsic degeneracy of the system can be canceled for the discrete variational scheme. In this way, a variational integrator is constructed that gains several advantages compared to standard integration tools for circuits; in particular, a comparison to BDF methods (which are usually the method of choice for the simulation of electric circuits) shows that even for simple LCR circuits, a better energy behavior and frequency spectrum preservation can be observed using the developed variational integrator.

  10. Microwave integrated circuits for space applications

    NASA Technical Reports Server (NTRS)

    Leonard, Regis F.; Romanofsky, Robert R.

    1991-01-01

    Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

  11. Displacement Damage in Bipolar Linear Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Rax, B. G.; Johnston, A. H.; Miyahira, T.

    2000-01-01

    Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

  12. Solution methods for very highly integrated circuits.

    SciTech Connect

    Nong, Ryan; Thornquist, Heidi K.; Chen, Yao; Mei, Ting; Santarelli, Keith R.; Tuminaro, Raymond Stephen

    2010-12-01

    While advances in manufacturing enable the fabrication of integrated circuits containing tens-to-hundreds of millions of devices, the time-sensitive modeling and simulation necessary to design these circuits poses a significant computational challenge. This is especially true for mixed-signal integrated circuits where detailed performance analyses are necessary for the individual analog/digital circuit components as well as the full system. When the integrated circuit has millions of devices, performing a full system simulation is practically infeasible using currently available Electrical Design Automation (EDA) tools. The principal reason for this is the time required for the nonlinear solver to compute the solutions of large linearized systems during the simulation of these circuits. The research presented in this report aims to address the computational difficulties introduced by these large linearized systems by using Model Order Reduction (MOR) to (i) generate specialized preconditioners that accelerate the computation of the linear system solution and (ii) reduce the overall dynamical system size. MOR techniques attempt to produce macromodels that capture the desired input-output behavior of larger dynamical systems and enable substantial speedups in simulation time. Several MOR techniques that have been developed under the LDRD on 'Solution Methods for Very Highly Integrated Circuits' will be presented in this report. Among those presented are techniques for linear time-invariant dynamical systems that either extend current approaches or improve the time-domain performance of the reduced model using novel error bounds and a new approach for linear time-varying dynamical systems that guarantees dimension reduction, which has not been proven before. Progress on preconditioning power grid systems using multi-grid techniques will be presented as well as a framework for delivering MOR techniques to the user community using Trilinos and the Xyce circuit simulator

  13. Design automation for integrated circuits

    NASA Astrophysics Data System (ADS)

    Newell, S. B.; de Geus, A. J.; Rohrer, R. A.

    1983-04-01

    Consideration is given to the development status of the use of computers in automated integrated circuit design methods, which promise the minimization of both design time and design error incidence. Integrated circuit design encompasses two major tasks: error specification, in which the goal is a logic diagram that accurately represents the desired electronic function, and physical specification, in which the goal is an exact description of the physical locations of all circuit elements and their interconnections on the chip. Design automation not only saves money by reducing design and fabrication time, but also helps the community of systems and logic designers to work more innovatively. Attention is given to established design automation methodologies, programmable logic arrays, and design shortcuts.

  14. Vertically Integrated Circuits at Fermilab

    SciTech Connect

    Deptuch, Grzegorz; Demarteau, Marcel; Hoff, James; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2009-01-01

    The exploration of the vertically integrated circuits, also commonly known as 3D-IC technology, for applications in radiation detection started at Fermilab in 2006. This paper examines the opportunities that vertical integration offers by looking at various 3D designs that have been completed by Fermilab. The emphasis is on opportunities that are presented by through silicon vias (TSV), wafer and circuit thinning and finally fusion bonding techniques to replace conventional bump bonding. Early work by Fermilab has led to an international consortium for the development of 3D-IC circuits for High Energy Physics. The consortium has submitted over 25 different designs for the Fermilab organized MPW run organized for the first time.

  15. MOS integrated circuit fault modeling

    NASA Technical Reports Server (NTRS)

    Sievers, M.

    1985-01-01

    Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.

  16. Delay locked loop integrated circuit.

    SciTech Connect

    Brocato, Robert Wesley

    2007-10-01

    This report gives a description of the development of a Delay Locked Loop (DLL) integrated circuit (IC). The DLL was developed and tested as a stand-alone IC test chip to be integrated into a larger application specific integrated circuit (ASIC), the Quadrature Digital Waveform Synthesizer (QDWS). The purpose of the DLL is to provide a digitally programmable delay to enable synchronization between an internal system clock and external peripherals with unknown clock skew. The DLL was designed and fabricated in the IBM 8RF process, a 0.13 {micro}m CMOS process. It was designed to operate with a 300MHz clock and has been tested up to 500MHz.

  17. Bioluminescent bioreporter integrated circuits (BBICs)

    NASA Astrophysics Data System (ADS)

    Simpson, Michael L.; Sayler, Gary S.; Nivens, David; Ripp, Steve; Paulus, Michael J.; Jellison, Gerald E.

    1998-07-01

    As the workhorse of the integrated circuit (IC) industry, the capabilities of CMOS have been expanded well beyond the original applications. The full spectrum of analog circuits from switched-capacitor filters to microwave circuit blocks, and from general-purpose operational amplifiers to sub- nanosecond analog timing circuits for nuclear physics experiments have been implemented in CMOS. This technology has also made in-roads into the growing area of monolithic sensors with devices such as active-pixel sensors and other electro-optical detection devices. While many of the processes used for MEMS fabrication are not compatible with the CMOS IC process, depositing a sensor material onto a previously fabricated CMOS circuit can create a very useful category of sensors. In this work we report a chemical sensor composed of bioluminescent bioreporters (genetically engineered bacteria) deposited onto a micro-luminometer fabricated in a standard CMOS IC process. The bioreporter used for this work emitted 490-nm light when exposed to toluene. This luminescence was detected by the micro- luminometer giving an indication of the concentration of toluene. Other bioluminescent bioreporters sensitive to explosives, mercury, and other organic chemicals and heavy metals have been reported. These could be incorporated (individually or in combination) with the micro-luminometer reported here to form a variety of chemical sensors.

  18. Integrated circuits, and design and manufacture thereof

    SciTech Connect

    Auracher, Stefan; Pribbernow, Claus; Hils, Andreas

    2006-04-18

    A representation of a macro for an integrated circuit layout. The representation may define sub-circuit cells of a module. The module may have a predefined functionality. The sub-circuit cells may include at least one reusable circuit cell. The reusable circuit cell may be configured such that when the predefined functionality of the module is not used, the reusable circuit cell is available for re-use.

  19. Removing Bonded Integrated Circuits From Boards

    NASA Technical Reports Server (NTRS)

    Rice, John T.

    1989-01-01

    Small resistance heater makes it easier, faster, and cheaper to remove integrated circuit from hybrid-circuit board, package, or other substrate for rework. Heater, located directly in polymeric bond interface or on substrate under integrated-circuit chip, energized when necessary to remove chip. Heat generated softens adhesive or solder that bonds chip to substrate. Chip then lifted easily from substrate.

  20. Advanced Imaging of Elementary Circuits

    ERIC Educational Resources Information Center

    Baird, William H.; Richards, Caleb; Godbole, Pranav

    2012-01-01

    Students commonly find the second semester of introductory physics to be more challenging than the first, probably due to the mechanical intuition we acquire just by moving around. For most students, there is no similar comfort with electricity or magnetism. In an effort to combat this confusion, we decided to examine simple electric circuits with…

  1. Integrated Circuit Electromagnetic Immunity Handbook

    NASA Astrophysics Data System (ADS)

    Sketoe, J. G.

    2000-08-01

    This handbook presents the results of the Boeing Company effort for NASA under contract NAS8-98217. Immunity level data for certain integrated circuit parts are discussed herein, along with analytical techniques for applying the data to electronics systems. This handbook is built heavily on the one produced in the seventies by McDonnell Douglas Astronautics Company (MDAC, MDC Report E1929 of 1 August 1978, entitled Integrated Circuit Electromagnetic Susceptibility Handbook, known commonly as the ICES Handbook, which has served countless systems designers for over 20 years). Sections 2 and 3 supplement the device susceptibility data presented in section 4 by presenting information on related material required to use the IC susceptibility information. Section 2 concerns itself with electromagnetic susceptibility analysis and serves as a guide in using the information contained in the rest of the handbook. A suggested system hardening requirements is presented in this chapter. Section 3 briefly discusses coupling and shielding considerations. For conservatism and simplicity, a worst case approach is advocated to determine the maximum amount of RF power picked up from a given field. This handbook expands the scope of the immunity data in this Handbook is to of 10 MHz to 10 GHz. However, the analytical techniques provided are applicable to much higher frequencies as well. It is expected however, that the upper frequency limit of concern is near 10 GHz. This is due to two factors; the pickup of microwave energy on system cables and wiring falls off as the square of the wavelength, and component response falls off at a rapid rate due to the effects of parasitic shunt paths for the RF energy. It should be noted also that the pickup on wires and cables does not approach infinity as the frequency decreases (as would be expected by extrapolating the square law dependence of the high frequency roll-off to lower frequencies) but levels off due to mismatch effects.

  2. Automatic generation of signal processing integrated circuits

    SciTech Connect

    Pope, S.P.

    1985-01-01

    A system for the automated design of signal processing integrated circuits is described in this thesis. The system is based on a library of circuit cells, and a software package that can configure the cells into complete integrated circuits. The architecture of the cell library is optimized for low and medium bandwidth digital signal processing applications. Circuits designed with the system use a multiprocessor architecture. Input to the system is a design file written in a specialized programming language. Software emulation from the design file is used to verify performance. A two-pass silicon compiler is used to translate the design file into a mask-level description of an integrated circuit. A major goal of the project is to make the system useable by those with little or no formal training in integrated circuits. A second goal is to reduce the time and cost associated with performing an integrated circuit design, while still producing designs which are reasonably efficient in their use of the technology. Development of the system was guided by basic research on appropriate architectures and circuit constructs for signal processors. As part of this research an integrated circuit was designed which performs speech analysis and synthesis. This vocoder circuit is intended for use in low-bit-rate digital speech transmission systems.

  3. Analog VLSI neural network integrated circuits

    NASA Technical Reports Server (NTRS)

    Kub, F. J.; Moon, K. K.; Just, E. A.

    1991-01-01

    Two analog very large scale integration (VLSI) vector matrix multiplier integrated circuit chips were designed, fabricated, and partially tested. They can perform both vector-matrix and matrix-matrix multiplication operations at high speeds. The 32 by 32 vector-matrix multiplier chip and the 128 by 64 vector-matrix multiplier chip were designed to perform 300 million and 3 billion multiplications per second, respectively. An additional circuit that has been developed is a continuous-time adaptive learning circuit. The performance achieved thus far for this circuit is an adaptivity of 28 dB at 300 KHz and 11 dB at 15 MHz. This circuit has demonstrated greater than two orders of magnitude higher frequency of operation than any previous adaptive learning circuit.

  4. Reverse engineering of integrated circuits

    DOEpatents

    Chisholm, Gregory H.; Eckmann, Steven T.; Lain, Christopher M.; Veroff, Robert L.

    2003-01-01

    Software and a method therein to analyze circuits. The software comprises several tools, each of which perform particular functions in the Reverse Engineering process. The analyst, through a standard interface, directs each tool to the portion of the task to which it is most well suited, rendering previously intractable problems solvable. The tools are generally used iteratively to produce a successively more abstract picture of a circuit, about which incomplete a priori knowledge exists.

  5. Integrated-Circuit Pseudorandom-Number Generator

    NASA Technical Reports Server (NTRS)

    Steelman, James E.; Beasley, Jeff; Aragon, Michael; Ramirez, Francisco; Summers, Kenneth L.; Knoebel, Arthur

    1992-01-01

    Integrated circuit produces 8-bit pseudorandom numbers from specified probability distribution, at rate of 10 MHz. Use of Boolean logic, circuit implements pseudorandom-number-generating algorithm. Circuit includes eight 12-bit pseudorandom-number generators, outputs are uniformly distributed. 8-bit pseudorandom numbers satisfying specified nonuniform probability distribution are generated by processing uniformly distributed outputs of eight 12-bit pseudorandom-number generators through "pipeline" of D flip-flops, comparators, and memories implementing conditional probabilities on zeros and ones.

  6. Reusable vibration resistant integrated circuit mounting socket

    DOEpatents

    Evans, Craig N.

    1995-01-01

    This invention discloses a novel form of socket for integrated circuits to be mounted on printed circuit boards. The socket uses a novel contact which is fabricated out of a bimetallic strip with a shape which makes the end of the strip move laterally as temperature changes. The end of the strip forms a barb which digs into an integrated circuit lead at normal temperatures and holds it firmly in the contact, preventing loosening and open circuits from vibration. By cooling the contact containing the bimetallic strip the barb end can be made to release so that the integrated circuit lead can be removed from the socket without damage either to the lead or to the socket components.

  7. Chain Of Test Contacts For Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo

    1989-01-01

    Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

  8. Integrated Circuit Stellar Magnitude Simulator

    ERIC Educational Resources Information Center

    Blackburn, James A.

    1978-01-01

    Describes an electronic circuit which can be used to demonstrate the stellar magnitude scale. Six rectangular light-emitting diodes with independently adjustable duty cycles represent stars of magnitudes 1 through 6. Experimentally verifies the logarithmic response of the eye. (Author/GA)

  9. Progress in organic integrated circuit manufacture

    NASA Astrophysics Data System (ADS)

    Taylor, D. Martin

    2016-02-01

    This review article focuses on the development of processes for the manufacture of organic electronic circuits. Beginning with the first report of an organic transistor it highlights the key developments leading to the successful manufacture of microprocessors and other complex circuits incorporating organic transistors. Both batch processing (based on silicon integrated circuit technology) as well as mass-printing, roll-to-roll (R2R) approaches are discussed. Currently, the best circuit performances are achieved using batch processing. It is suggested that an emerging, large mass-market for electronic tags may dictate that R2R manufacture will likely be required to meet the high throughput rates needed. However, significant improvements in resolution and registration are necessary to achieve increased circuit operating speeds.

  10. Polysilicon photoconductor for integrated circuits

    DOEpatents

    Hammond, Robert B.; Bowman, Douglas R.

    1989-01-01

    A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

  11. Polysilicon photoconductor for integrated circuits

    DOEpatents

    Hammond, Robert B.; Bowman, Douglas R.

    1990-01-01

    A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

  12. Polysilicon photoconductor for integrated circuits

    DOEpatents

    Hammond, R.B.; Bowman, D.R.

    1989-04-11

    A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

  13. Substrate optimization for integrated circuit antennas

    NASA Astrophysics Data System (ADS)

    Alexopoulos, N. G.; Katehi, P. B.; Rutledge, D. B.

    1983-07-01

    The reciprocity theorem and integral equation techniques are employed to determine the properties of integrated-circuit antennas. The effect of surface waves is considered for dipole and slot elements on substrates. The radiation and bandwidth of microstrip dipoles are optimized in terms of substrate thickness and permittivity.

  14. Electronic circuits and systems: A compilation. [including integrated circuits, logic circuits, varactor diode circuits, low pass filters, and optical equipment circuits

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays.

  15. Design methodologies for silicon photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Chrostowski, Lukas; Flueckiger, Jonas; Lin, Charlie; Hochberg, Michael; Pond, James; Klein, Jackson; Ferguson, John; Cone, Chris

    2014-03-01

    This paper describes design methodologies developed for silicon photonics integrated circuits. The approach presented is inspired by methods employed in the Electronics Design Automation (EDA) community. This is complemented by well established photonic component design tools, compact model synthesis, and optical circuit modelling. A generic silicon photonics design kit, as described here, is available for download at http://www.siepic.ubc.ca/GSiP.

  16. Package for integrated optic circuit and method

    DOEpatents

    Kravitz, S.H.; Hadley, G.R.; Warren, M.E.; Carson, R.F.; Armendariz, M.G.

    1998-08-04

    A structure and method are disclosed for packaging an integrated optic circuit. The package comprises a first wall having a plurality of microlenses formed therein to establish channels of optical communication with an integrated optic circuit within the package. A first registration pattern is provided on an inside surface of one of the walls of the package for alignment and attachment of the integrated optic circuit. The package in one embodiment may further comprise a fiber holder for aligning and attaching a plurality of optical fibers to the package and extending the channels of optical communication to the fibers outside the package. In another embodiment, a fiber holder may be used to hold the fibers and align the fibers to the package. The fiber holder may be detachably connected to the package. 6 figs.

  17. Package for integrated optic circuit and method

    DOEpatents

    Kravitz, Stanley H.; Hadley, G. Ronald; Warren, Mial E.; Carson, Richard F.; Armendariz, Marcelino G.

    1998-01-01

    A structure and method for packaging an integrated optic circuit. The package comprises a first wall having a plurality of microlenses formed therein to establish channels of optical communication with an integrated optic circuit within the package. A first registration pattern is provided on an inside surface of one of the walls of the package for alignment and attachment of the integrated optic circuit. The package in one embodiment may further comprise a fiber holder for aligning and attaching a plurality of optical fibers to the package and extending the channels of optical communication to the fibers outside the package. In another embodiment, a fiber holder may be used to hold the fibers and align the fibers to the package. The fiber holder may be detachably connected to the package.

  18. Laboratory experiments in integrated circuit fabrication

    NASA Astrophysics Data System (ADS)

    Jenkins, Thomas J.; Kolesar, Edward S.

    1993-06-01

    The objectives of the experiment are fourfold: to provide practical experience implementing the fundamental processes and technology associated with the science and art of integrated circuit (IC) fabrication; to afford the opportunity for the student to apply the theory associated with IC fabrication and semiconductor device operation; to motivate the student to exercise engineering decisions associated with fabricating integrated circuits; and to complement the theory of n-channel MOS and diffused devices that are presented in the classroom by actually fabricating and testing them. Therefore, a balance between theory and practice can be realized in the education of young engineers, whose education is often criticized as lacking sufficient design and practical content.

  19. Laboratory experiments in integrated circuit fabrication

    NASA Technical Reports Server (NTRS)

    Jenkins, Thomas J.; Kolesar, Edward S.

    1993-01-01

    The objectives of the experiment are fourfold: to provide practical experience implementing the fundamental processes and technology associated with the science and art of integrated circuit (IC) fabrication; to afford the opportunity for the student to apply the theory associated with IC fabrication and semiconductor device operation; to motivate the student to exercise engineering decisions associated with fabricating integrated circuits; and to complement the theory of n-channel MOS and diffused devices that are presented in the classroom by actually fabricating and testing them. Therefore, a balance between theory and practice can be realized in the education of young engineers, whose education is often criticized as lacking sufficient design and practical content.

  20. Test Structures For Bumpy Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G.; Sayah, Hoshyar R.

    1989-01-01

    Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.

  1. Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Mazed, Mohammad; Siegel, Peter; Smith, R. Peter

    1995-01-01

    Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

  2. Microwave integrated circuit for Josephson voltage standards

    NASA Technical Reports Server (NTRS)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  3. Bioluminescent bioreporter integrated circuit detection methods

    DOEpatents

    Simpson, Michael L.; Paulus, Michael J.; Sayler, Gary S.; Applegate, Bruce M.; Ripp, Steven A.

    2005-06-14

    Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for detection of particular analytes, including ammonia and estrogen compounds.

  4. Designing Test Chips for Custom Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Griswold, T. W.; Pina, C. A.; Timoc, C. C.

    1985-01-01

    Collection of design and testing procedures partly automates development of built-in test chips for CMOS integrated circuits. Testchip methodology intended especially for users of custom integratedcircuit wafers. Test-Chip Designs and Testing Procedures (including datareduction procedures) generated automatically by computer from programed design and testing rules and from information supplied by user.

  5. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  6. Integrated Circuits in the Introductory Electronics Laboratory

    ERIC Educational Resources Information Center

    English, Thomas C.; Lind, David A.

    1973-01-01

    Discusses the use of an integrated circuit operational amplifier in an introductory electronics laboratory course for undergraduate science majors. The advantages of this approach and the implications for scientific instrumentation are identified. Describes a number of experiments suitable for the undergraduate laboratory. (Author/DF)

  7. Optical coupling to monolithic integrated photonic circuits

    NASA Astrophysics Data System (ADS)

    Palen, Edward

    2007-02-01

    Methods of coupling optical fiber and light sources to monolithic integrated photonic circuits are needed to expand future photonics communications markets. Requirements are low cost, high coupling efficiencies, and scalability to high volume production rates. Key features of the different optical coupling options will be discussed along with implementation examples. Requirements for low cost optical coupling and high volume production scalability will be shared.

  8. Guidelines for SEU-Resistant Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Nichols, D. K.

    1986-01-01

    Paper presents recent results of continuing program for increasing resistance of integrated circuits to single-event upset (SEU). Results based on study of test data for heavy-ion SEU in more than 180 different types of devices. (Some devices perform identical functions but made by different processes.) Program also examines developments in mathematical models for SEU.

  9. Healing Voids In Interconnections In Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Cuddihy, Edward F.; Lawton, Russell A.; Gavin, Thomas

    1989-01-01

    Unusual heat treatment heals voids in aluminum interconnections on integrated circuits (IC's). Treatment consists of heating IC to temperature between 200 degrees C and 400 degrees C, holding it at that temperature, and then plunging IC immediately into liquid nitrogen. Typical holding time at evaluated temperature is 30 minutes.

  10. Integrated Circuit Failure Analysis Hypertext Help System

    1995-02-23

    This software assists a failure analyst performing failure analysis on integrated circuits. The software can also be used to train inexperienced failure analysts. The software also provides a method for storing information and making it easily available to experienced failure analysts.

  11. Package Holds Five Monolithic Microwave Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.

    1996-01-01

    Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.

  12. Modeling "Soft" Errors in Bipolar Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J.; Benumof, R.; Vonroos, O.

    1985-01-01

    Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.

  13. All-ion-implantation process for integrated circuits

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1979-01-01

    Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

  14. Integrated-Circuit Active Digital Filter

    NASA Technical Reports Server (NTRS)

    Nathan, R.

    1986-01-01

    Pipeline architecture with parallel multipliers and adders speeds calculation of weighted sums. Picture-element values and partial sums flow through delay-adder modules. After each cycle or time unit of calculation, each value in filter moves one position right. Digital integrated-circuit chips with pipeline architecture rapidly move 35 X 35 two-dimensional convolutions. Need for such circuits in image enhancement, data filtering, correlation, pattern extraction, and synthetic-aperture-radar image processing: all require repeated calculations of weighted sums of values from images or two-dimensional arrays of data.

  15. Applying analog integrated circuits for HERO protection

    NASA Technical Reports Server (NTRS)

    Willis, Kenneth E.; Blachowski, Thomas J.

    1994-01-01

    One of the most efficient methods for protecting electro-explosive devices (EED's) from HERO and ESD is to shield the EED in a conducting shell (Faraday cage). Electrical energy is transferred to the bridge by means of a magnetic coupling which passes through a portion of the conducting shell that is made from a magnetically permeable but electrically conducting material. This technique was perfected by ML Aviation, a U.K. company, in the early 80's, and was called a Radio Frequency Attenuation Connector (RFAC). It is now in wide use in the U.K. Previously, the disadvantage of RFAC over more conventional methods was its relatively high cost, largely driven by a thick film hybrid circuit used to switch the primary of the transformer. Recently, through a licensing agreement, this technology has been transferred to the U.S. and significant cost reductions and performance improvements have been achieved by the introduction of analog integrated circuits. An integrated circuit performs the following functions: (1) Chops the DC input to a signal suitable for driving the primary of the transformer; (2) Verifies the input voltage is above a threshold; (3) Verifies the input voltage is valid for a pre set time before enabling the device; (4) Provides thermal protection of the circuit; and (5) Provides an external input for independent logic level enabling of the power transfer mechanism. This paper describes the new RFAC product and its applications.

  16. Tunable resonant structures for photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Ptasinski, Joanna Nina

    Photonics is an evolving field allowing for optical devices to be made cost effectively using standard semiconductor fabrication techniques, which in turn enables integration with microelectronic chips. Chip scale photonics will play an increasing role in the future of communications as the demand for bandwidth and reduced power consumption per bit continues to grow. Tunable optical circuit components are one of the essential technologies in the development of photonic analogues for classical electronic devices, where tunable photonic resonant structures allow for altering of their electromagnetic spectrum and find applications in optical switching, filtering, buffering, lasers and biosensors. The scope of this work is focused on tunable resonant structures for photonic integrated circuits. Specifically, this work demonstrates active tuning of silicon photonic resonant structures using the properties of dye doped nematic liquid crystals, temperature stabilization of silicon photonics using the passive properties of liquid crystals, and the effects of low density plasma enhanced chemical vapor deposition (PECVD) claddings on ring resonator device performance.

  17. Development of beam lead RF integrated circuits

    NASA Technical Reports Server (NTRS)

    Kline, A. J.; Kermode, A. W.

    1975-01-01

    This paper describes the design and development of a set of multifunction VHF/UHF integrated circuits aimed at providing a major improvement in spacecraft radio reliability through low stress operation and the processing of these circuits in beam-lead form. The methods evolved for the high frequency characterization of the devices are discussed together with the design of suitable test fixtures. Typical test results and the distribution of test parameters are presented. A unique carrier for beam-lead devices is described, and the need for such a device is discussed. The application of the carrier to device screening, burn-in and drift measurements is discussed together with the incentives for providing these capabilities. An overview of the integration of the devices into the spacecraft radio is given and candidate assembly processes are discussed. The technology impact of this approach upon future spacecraft radio systems is qualitatively examined.

  18. Packaging concept for LSI beam lead integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Development of packaging system for mounting beam lead integrated chip circuit on lead frame is discussed. Process for fabricating large scale integration circuits is described. Diagrams illustrating method of construction are included.

  19. Viewing Integrated-Circuit Interconnections By SEM

    NASA Technical Reports Server (NTRS)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  20. Progress in radiation immune thermionic integrated circuits

    SciTech Connect

    Lynn, D.K.; McCormick, J.B.

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

  1. Power system with an integrated lubrication circuit

    SciTech Connect

    Hoff, Brian D.; Akasam, Sivaprasad; Algrain, Marcelo C.; Johnson, Kris W.; Lane, William H.

    2009-11-10

    A power system includes an engine having a first lubrication circuit and at least one auxiliary power unit having a second lubrication circuit. The first lubrication circuit is in fluid communication with the second lubrication circuit.

  2. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    DOEpatents

    Clark, Lawrence T.; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  3. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  4. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  5. Vacuum die attach for integrated circuits

    DOEpatents

    Schmitt, Edward H.; Tuckerman, David B.

    1991-01-01

    A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required.

  6. Vacuum die attach for integrated circuits

    DOEpatents

    Schmitt, E.H.; Tuckerman, D.B.

    1991-09-10

    A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.

  7. 3D packaging for integrated circuit systems

    SciTech Connect

    Chu, D.; Palmer, D.W.

    1996-11-01

    A goal was set for high density, high performance microelectronics pursued through a dense 3D packing of integrated circuits. A {open_quotes}tool set{close_quotes} of assembly processes have been developed that enable 3D system designs: 3D thermal analysis, silicon electrical through vias, IC thinning, mounting wells in silicon, adhesives for silicon stacking, pretesting of IC chips before commitment to stacks, and bond pad bumping. Validation of these process developments occurred through both Sandia prototypes and subsequent commercial examples.

  8. An integrated circuit floating point accumulator

    NASA Technical Reports Server (NTRS)

    Goldsmith, T. C.

    1977-01-01

    Goddard Space Flight Center has developed a large scale integrated circuit (type 623) which can perform pulse counting, storage, floating point compression, and serial transmission, using a single monolithic device. Counts of 27 or 19 bits can be converted to transmitted values of 12 or 8 bits respectively. Use of the 623 has resulted in substantial savaings in weight, volume, and dollar resources on at least 11 scientific instruments to be flown on 4 NASA spacecraft. The design, construction, and application of the 623 are described.

  9. Automatic Parametric Testing Of Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Jennings, Glenn A.; Pina, Cesar A.

    1989-01-01

    Computer program for parametric testing saves time and effort in research and development of integrated circuits. Software system automatically assembles various types of test structures and lays them out on silicon chip, generates sequency of test instructions, and interprets test data. Employs self-programming software; needs minimum of human intervention. Adapted to needs of different laboratories and readily accommodates new test structures. Program codes designed to be adaptable to most computers and test equipment now in use. Written in high-level languages to enhance transportability.

  10. Laser applications in integrated circuit packaging

    NASA Astrophysics Data System (ADS)

    Lu, Yongfeng; Song, Wen D.; Ren, ZhongMin; An, Chengwu; Ye, Kaidong D.; Liu, DaMing; Wang, Weijie; Hong, Ming Hui; Chong, Tow Chong

    2002-06-01

    Laser processing has large potential in the packaging of integrated circuits (IC). It can be used in many applications such as laser cleaning of IC mold tools, laser deflash to remove mold flash form heat sinks and lead wires of IC packages, laser singulation of BGA and CSP, laser reflow of solder ball on GBA, laser marking on packages and on SI wafers. During the implementation of all these applications, laser parameters, material issues, throughput, yield, reliability and monitoring techniques have to b taken into account. Monitoring of laser-induced plasma and laser induced acoustic wave has been used to understand and to control the processes involved in these applications.

  11. Tool For Tinning Integrated-Circuit Leads

    NASA Technical Reports Server (NTRS)

    Prosser, Gregory N.

    1988-01-01

    As many as eight flatpacks held. Tool made of fiberglass boards. Clamps row of flatpacks by their leads so leads on opposite side of packages dipped. After dipping, nuts on boards loosened, flatpacks turned around, nuts retightened, and untinned leads dipped. Strips of magnetic material grip leads of flatpacks (made of Kovar, magnetic iron/nickel/cobalt alloy) while boards repositioned. Micrometerlike screw used to adjust exposed width of magnetic strip to suit dimensions of flatpacks. Holds flatpack integrated circuits so leads tinned. Accommodates several flatpacks for simultaneous dipping of leads in molten solder. Adjusts to accept flatpacks in range of sizes.

  12. Integrated-Circuit Broadband Infrared Sources

    NASA Technical Reports Server (NTRS)

    Lamb, G.; Jhabvala, M.; Burgess, A.

    1989-01-01

    Microscopic devices consume less power, run hotter, and are more reliable. Simple, compact, lightweight, rapidly-responding reference sources of broadband infrared radiation made available by integrated-circuit technology. Intended primarily for use in calibration of remote-sensing infrared instruments, devices eventually replace conventional infrared sources. New devices also replace present generation of miniature infrared sources. Self-passivating nature of poly-crystalline silicon adds to reliability of devices. Maximum operating temperature is 1,000 K, and power dissipation is only one-fourth that of prior devices.

  13. Accelerating functional verification of an integrated circuit

    SciTech Connect

    Deindl, Michael; Ruedinger, Jeffrey Joseph; Zoellin, Christian G.

    2015-10-27

    Illustrative embodiments include a method, system, and computer program product for accelerating functional verification in simulation testing of an integrated circuit (IC). Using a processor and a memory, a serial operation is replaced with a direct register access operation, wherein the serial operation is configured to perform bit shifting operation using a register in a simulation of the IC. The serial operation is blocked from manipulating the register in the simulation of the IC. Using the register in the simulation of the IC, the direct register access operation is performed in place of the serial operation.

  14. Electro-optical Probing Of Terahertz Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Romanofsky, R.; Whitaker, J. F.; Valdmanis, J. A.; Mourou, G.; Jackson, T. A.

    1990-01-01

    Electro-optical probe developed to perform noncontact, nondestructive, and relatively noninvasive measurements of electric fields over broad spectrum at millimeter and shorter wavelengths in integrated circuits. Manipulated with conventional intregrated-circuit-wafer-probing equipment and operated without any special preparation of integrated circuits. Tip of probe small electro-optical crystal serving as proximity electric-field sensor.

  15. Spread Of Charge From Ion Tracks In Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Zoutendyk, John A.; Schwartz, Harvey R.; Watson, R. Kevin; Nevill, Leland R.

    1989-01-01

    Single-event upsets (SEU's) propagate to adjacent cells in integrated memory circuits. Findings of experiments in lateral transport of electrical-charge carriers from ion tracks in 256K dynamic randon-access memories (DRAM's). As dimensions of integrated circuits decrease, vulnerability to SEU's increases. Understanding gained enables design of less vulnerable circuits.

  16. Technologies for highly parallel optoelectronic integrated circuits

    SciTech Connect

    Lear, K.L.

    1994-10-01

    While summarily reviewing the range of optoelectronic integrated circuits (OEICs), this paper emphasizes technology for highly parallel optical interconnections. Market volume and integration suitability considerations highlight board-to-board interconnects within systems as an initial insertion point for large OEIC production. The large channel count of these intrasystem interconnects necessitates two-dimensional laser transmitter and photoreceiver arrays. Surface normal optoelectronic components are promoted as a basis for OEICs in this application. An example system is discussed that uses vertical cavity surface emitting lasers for optical buses between layers of stacked multichip modules. Another potentially important application for highly parallel OEICs is optical routing or packet switching, and examples of such systems based on smart pixels are presented.

  17. Optical Packet & Circuit Integrated Network for Future Networks

    NASA Astrophysics Data System (ADS)

    Harai, Hiroaki

    This paper presents recent progress made in the development of an optical packet and circuit integrated network. From the viewpoint of end users, this is a single network that provides both high-speed, inexpensive services and deterministic-delay, low-data-loss services according to the users' usage scenario. From the viewpoint of network service providers, this network provides large switching capacity with low energy requirements, high flexibility, and efficient resource utilization with a simple control mechanism. The network we describe here will contribute to diversification of services, enhanced functional flexibility, and efficient energy consumption, which are included in the twelve design goals of Future Networks announced by ITU-T (International Telecommunication Union - Telecommunication Standardization Sector). We examine the waveband-based network architecture of the optical packet and circuit integrated network. Use of multi-wavelength optical packet increases the switch throughput while minimizing energy consumption. A rank accounting method provides a solution to the problem of inter-domain signaling for end-to-end lightpath establishment. Moving boundary control for packet and circuit services makes for efficient resource utilization. We also describe related advanced technologies such as waveband switching, elastic lightpaths, automatic locator numbering assignment, and biologically-inspired control of optical integrated network.

  18. Millimeter wave planar integrated circuit developments for communication applications

    NASA Astrophysics Data System (ADS)

    Chang, K.; Sun, C.

    Millimeter wave communication systems offer certain advantages over lower frequency systems. These advantages are related to wider bandwidth, larger data handling capacity, covert operation, and better immunity to jamming. Newer developments in the area of component technology for systems operating at millimeter wavelengths have utilized planar integrated circuits. Such circuits provide benefits of light weight, small size, and inherent low cost due to ease of high volume manufacturing. The present paper is concerned with a number of key IC components which have been developed. These components are ideally suited for direct application in advanced tactical, radar, and satellite communication systems. Attention is given to a rat-race microstrip balanced mixer, a crossbar stripline balanced mixer, and various subsystems developments.

  19. SiGe/Si Monolithically Integrated Amplifier Circuits

    NASA Technical Reports Server (NTRS)

    Katehi, Linda P. B.; Bhattacharya, Pallab

    1998-01-01

    With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

  20. Advanced photonic integrated technologies for optical routing and switching

    NASA Astrophysics Data System (ADS)

    Masanovic, Milan L.; Burmeister, Emily; Dummer, Matthew M.; Koch, Brian; Nicholes, Steven C.; Jevremovic, Biljana; Nguyen, Kim; Lal, Vikrant; Bowers, John E.; Coldren, Larry A.; Blumenthal, Daniel J.

    2009-02-01

    In this paper, we report on the latest advances in implementation of the photonic integrated circuits (PICs) required for optical routing. These components include high-speed, high-performance integrated tunable wavelength converters and packet forwarding chips, integrated optical buffers, and integrated mode-locked lasers.

  1. Subminiature deflection circuit operates integrated sweep circuits in TV camera

    NASA Technical Reports Server (NTRS)

    Schaff, F. L.

    1967-01-01

    Small magnetic sweep deflection circuits operate a hand-held lunar television camera. They convert timing signals from the synchronizer into waveforms that provide a raster on the vidicon target. Raster size remains constant and linear during wide voltage and temperature fluctuations.

  2. Integrated optical circuits for numerical computation

    NASA Technical Reports Server (NTRS)

    Verber, C. M.; Kenan, R. P.

    1983-01-01

    The development of integrated optical circuits (IOC) for numerical-computation applications is reviewed, with a focus on the use of systolic architectures. The basic architecture criteria for optical processors are shown to be the same as those proposed by Kung (1982) for VLSI design, and the advantages of IOCs over bulk techniques are indicated. The operation and fabrication of electrooptic grating structures are outlined, and the application of IOCs of this type to an existing 32-bit, 32-Mbit/sec digital correlator, a proposed matrix multiplier, and a proposed pipeline processor for polynomial evaluation is discussed. The problems arising from the inherent nonlinearity of electrooptic gratings are considered. Diagrams and drawings of the application concepts are provided.

  3. Post irradiation effects (PIE) in integrated circuits

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Lowry, L.; Barnes, C.; Zakharia, M.; Agarwal, S.; Rax, B.

    1991-01-01

    Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).

  4. Radiation effects on power integrated circuits

    SciTech Connect

    Darwish, M.N.; Dolly, M.C.; Goodwin, C.A.; Titus, J.L

    1988-12-01

    A study was initiated to investigate the effects of gamma (total ionizing dose), prompt gamma (gamma dot), and neutron radiation on commercially available power integrated circuits (PIC's). A Dielectric Isolated (DI) Bipolar-CMOS-DMOS (BCDMOS) technology developed at AT and T Bell Laboratories was selected for this characterization. Total ionizing dose testing resulted in device failure at 30 krads (Si). Gamma dot testing (30 ns pulsewidth) resulted in device failure due to transient upset of the CMOS logic at 1.0 E+09 rads(Si)/s. Neutron testing resulted in severe degradation in performance, but devices remained functional after receiving a fluence of 2.0 E+14 n/cm/sup 2/. Also, an attempt was made to harden the BCDMOS technology to gamma radiation. Devices from eight processing splits were characterized to determine if specific process changes would improve their performance.

  5. Monolithic microwave integrated circuit water vapor radiometer

    NASA Technical Reports Server (NTRS)

    Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

    1991-01-01

    A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

  6. Removal of Gross Air Embolization from Cardiopulmonary Bypass Circuits with Integrated Arterial Line Filters: A Comparison of Circuit Designs.

    PubMed

    Reagor, James A; Holt, David W

    2016-03-01

    Advances in technology, the desire to minimize blood product transfusions, and concerns relating to inflammatory mediators have lead many practitioners and manufacturers to minimize cardiopulmonary bypass (CBP) circuit designs. The oxygenator and arterial line filter (ALF) have been integrated into one device as a method of attaining a reduction in prime volume and surface area. The instructions for use of a currently available oxygenator with integrated ALF recommends incorporating a recirculation line distal to the oxygenator. However, according to an unscientific survey, 70% of respondents utilize CPB circuits incorporating integrated ALFs without a path of recirculation distal to the oxygenator outlet. Considering this circuit design, the ability to quickly remove a gross air bolus in the blood path distal to the oxygenator may be compromised. This in vitro study was designed to determine if the time required to remove a gross air bolus from a CPB circuit without a path of recirculation distal to the oxygenator will be significantly longer than that of a circuit with a path of recirculation distal to the oxygenator. A significant difference was found in the mean time required to remove a gross air bolus between the circuit designs (p = .0003). Additionally, There was found to be a statistically significant difference in the mean time required to remove a gross air bolus between Trial 1 and Trials 4 (p = .015) and 5 (p =.014) irrespective of the circuit design. Under the parameters of this study, a recirculation line distal to an oxygenator with an integrated ALF significantly decreases the time it takes to remove an air bolus from the CPB circuit and may be safer for clinical use than the same circuit without a recirculation line. PMID:27134304

  7. W88 integrated circuit shelf life program

    SciTech Connect

    Soden, J.M.; Anderson, R.E.

    1998-01-01

    The W88 Integrated Circuit Shelf Life Program was created to monitor the long term performance, reliability characteristics, and technological status of representative WR ICs manufactured by the Allied Signal Albuquerque Microelectronics Operation (AMO) and by Harris Semiconductor Custom Integrated Circuits Division. Six types of ICs were used. A total of 272 ICs entered two storage temperature environments. Electrical testing and destructive physical analysis were completed in 1995. During each year of the program, the ICs were electrically tested and samples were selected for destructive physical analysis (DPA). ICs that failed electrical tests or DPA criteria were analyzed. Fifteen electrical failures occurred, with two dominant failure modes: electrical overstress (EOS) damage involving the production test programs and electrostatic discharge (ESD) damage during analysis. Because of the extensive handling required during multi-year programs like this, it is not unusual for EOS and ESD failures to occur even though handling and testing precautions are taken. The clustering of the electrical test failures in a small subset of the test operations supports the conclusion that the test operation itself was responsible for many of the failures and is suspected to be responsible for the others. Analysis of the electrical data for the good ICs found no significant degradation trends caused by the storage environments. Forty-six ICs were selected for DPA with findings primarily in two areas: wire bonding and die processing. The wire bonding and die processing findings are not surprising since these technology conditions had been documented during manufacturing and were determined to present acceptable risk. The current reliability assessment of the W88 stockpile assemblies employing these and related ICs is reinforced by the results of this shelf life program. Data from this program will aid future investigation of 4/3 micron or MNOS IC technology failure modes.

  8. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  9. Plug-in integrated/hybrid circuit

    NASA Technical Reports Server (NTRS)

    Stringer, E. J.

    1974-01-01

    Hybrid circuitry can be installed into standard round bayonet connectors, to eliminate wiring from connector to circuit. Circuits can be connected directly into either section of connector pair, eliminating need for hard wiring to that section.

  10. Method for analyzing radiation sensitivity of integrated circuits

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Stanley, A. G. (Inventor)

    1979-01-01

    A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity.

  11. Energy-efficient neuron, synapse and STDP integrated circuits.

    PubMed

    Cruz-Albrecht, Jose M; Yung, Michael W; Srinivasa, Narayan

    2012-06-01

    Ultra-low energy biologically-inspired neuron and synapse integrated circuits are presented. The synapse includes a spike timing dependent plasticity (STDP) learning rule circuit. These circuits have been designed, fabricated and tested using a 90 nm CMOS process. Experimental measurements demonstrate proper operation. The neuron and the synapse with STDP circuits have an energy consumption of around 0.4 pJ per spike and synaptic operation respectively. PMID:23853146

  12. Ge/Si Integrated Circuit For Infrared Imaging

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.

    1990-01-01

    Proposed integrated circuit consists of focal-plane array of metal/germanium Schottky-barrier photodetectors on same chip with silicon-based circuits that processes signals from photodetectors. Made compatible with underlying silicon-based circuitry by growing germanium epitaxially on silicon circuit wafers. Metal deposited in ultrahigh vacuum immediately after growth of germanium. Combination of described techniques results in high-resolution infrared-imaging circuits of superior performance.

  13. Shielded silicon gate complementary MOS integrated circuit.

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.; Hayes, P. J.

    1972-01-01

    An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

  14. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  15. InP-based three-dimensional photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

  16. Securing health sensing using integrated circuit metric.

    PubMed

    Tahir, Ruhma; Tahir, Hasan; McDonald-Maier, Klaus

    2015-01-01

    Convergence of technologies from several domains of computing and healthcare have aided in the creation of devices that can help health professionals in monitoring their patients remotely. An increase in networked healthcare devices has resulted in incidents related to data theft, medical identity theft and insurance fraud. In this paper, we discuss the design and implementation of a secure lightweight wearable health sensing system. The proposed system is based on an emerging security technology called Integrated Circuit Metric (ICMetric) that extracts the inherent features of a device to generate a unique device identification. In this paper, we provide details of how the physical characteristics of a health sensor can be used for the generation of hardware "fingerprints". The obtained fingerprints are used to deliver security services like authentication, confidentiality, secure admission and symmetric key generation. The generated symmetric key is used to securely communicate the health records and data of the patient. Based on experimental results and the security analysis of the proposed scheme, it is apparent that the proposed system enables high levels of security for health monitoring in resource optimized manner. PMID:26492250

  17. Securing Health Sensing Using Integrated Circuit Metric

    PubMed Central

    Tahir, Ruhma; Tahir, Hasan; McDonald-Maier, Klaus

    2015-01-01

    Convergence of technologies from several domains of computing and healthcare have aided in the creation of devices that can help health professionals in monitoring their patients remotely. An increase in networked healthcare devices has resulted in incidents related to data theft, medical identity theft and insurance fraud. In this paper, we discuss the design and implementation of a secure lightweight wearable health sensing system. The proposed system is based on an emerging security technology called Integrated Circuit Metric (ICMetric) that extracts the inherent features of a device to generate a unique device identification. In this paper, we provide details of how the physical characteristics of a health sensor can be used for the generation of hardware “fingerprints”. The obtained fingerprints are used to deliver security services like authentication, confidentiality, secure admission and symmetric key generation. The generated symmetric key is used to securely communicate the health records and data of the patient. Based on experimental results and the security analysis of the proposed scheme, it is apparent that the proposed system enables high levels of security for health monitoring in resource optimized manner. PMID:26492250

  18. Electronic-photonic integrated circuits on the CMOS platform

    NASA Astrophysics Data System (ADS)

    Kimerling, L. C.; Ahn, D.; Apsel, A. B.; Beals, M.; Carothers, D.; Chen, Y.-K.; Conway, T.; Gill, D. M.; Grove, M.; Hong, C.-Y.; Lipson, M.; Liu, J.; Michel, J.; Pan, D.; Patel, S. S.; Pomerene, A. T.; Rasras, M.; Sparacin, D. K.; Tu, K.-Y.; White, A. E.; Wong, C. W.

    2006-02-01

    The optical components industry stands at the threshold of a major expansion that will restructure its business processes and sustain its profitability for the next three decades. This growth will establish a cost effective platform for the partitioning of electronic and photonic functionality to extend the processing power of integrated circuits. BAE Systems, Lucent Technologies, Massachusetts Institute of Technology, and Applied Wave Research are participating in a high payoff research and development program for the Microsystems Technology Office (MTO) of DARPA. The goal of the program is the development of technologies and design tools necessary to fabricate an application-specific, electronicphotonic integrated circuit (AS-EPIC). As part of the development of this demonstration platform we are exploring selected functions normally associated with the front end of mixed signal receivers such as modulation, detection, and filtering. The chip will be fabricated in the BAE Systems CMOS foundry and at MIT's Microphotonics Center. We will present the latest results on the performance of multi-layer deposited High Index Contrast Waveguides, CMOS compatible modulators and detectors, and optical filter slices. These advances will be discussed in the context of the Communications Technology Roadmap that was recently released by the MIT Microphotonics Center Industry Consortium.

  19. Recent advances on integrated quantum communications

    NASA Astrophysics Data System (ADS)

    Orieux, Adeline; Diamanti, Eleni

    2016-08-01

    In recent years, the use of integrated technologies for applications in the field of quantum information processing and communications has made great progress. The resulting devices feature valuable characteristics such as scalability, reproducibility, low cost and interconnectivity, and have the potential to revolutionize our computation and communication practices in the future, much in the way that electronic integrated circuits have drastically transformed our information processing capacities since the last century. Among the multiple applications of integrated quantum technologies, this review will focus on typical components of quantum communication systems and on overall integrated system operation characteristics. We are interested in particular in the use of photonic integration platforms for developing devices necessary in quantum communications, including sources, detectors and both passive and active optical elements. We also illustrate the challenges associated with performing quantum communications on chip, by using the case study of quantum key distribution—the most advanced application of quantum information science. We conclude with promising perspectives in this field.

  20. Nanophotonic integrated circuits from nanoresonators grown on silicon

    NASA Astrophysics Data System (ADS)

    Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D.; Li, Kun; Chang-Hasnain, Connie

    2014-07-01

    Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore’s law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

  1. Advanced Integrated Traction System

    SciTech Connect

    Greg Smith; Charles Gough

    2011-08-31

    The United States Department of Energy elaborates the compelling need for a commercialized competitively priced electric traction drive system to proliferate the acceptance of HEVs, PHEVs, and FCVs in the market. The desired end result is a technically and commercially verified integrated ETS (Electric Traction System) product design that can be manufactured and distributed through a broad network of competitive suppliers to all auto manufacturers. The objectives of this FCVT program are to develop advanced technologies for an integrated ETS capable of 55kW peak power for 18 seconds and 30kW of continuous power. Additionally, to accommodate a variety of automotive platforms the ETS design should be scalable to 120kW peak power for 18 seconds and 65kW of continuous power. The ETS (exclusive of the DC/DC Converter) is to cost no more than $660 (55kW at $12/kW) to produce in quantities of 100,000 units per year, should have a total weight less than 46kg, and have a volume less than 16 liters. The cost target for the optional Bi-Directional DC/DC Converter is $375. The goal is to achieve these targets with the use of engine coolant at a nominal temperature of 105C. The system efficiency should exceed 90% at 20% of rated torque over 10% to 100% of maximum speed. The nominal operating system voltage is to be 325V, with consideration for higher voltages. This project investigated a wide range of technologies, including ETS topologies, components, and interconnects. Each technology and its validity for automotive use were verified and then these technologies were integrated into a high temperature ETS design that would support a wide variety of applications (fuel cell, hybrids, electrics, and plug-ins). This ETS met all the DOE 2010 objectives of cost, weight, volume and efficiency, and the specific power and power density 2015 objectives. Additionally a bi-directional converter was developed that provides charging and electric power take-off which is the first step

  2. 35 GHz integrated circuit rectifying antenna with 33 percent efficiency

    NASA Astrophysics Data System (ADS)

    Yoo, T.-W.; Chang, K.

    1991-11-01

    A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

  3. 35 GHz integrated circuit rectifying antenna with 33 percent efficiency

    NASA Technical Reports Server (NTRS)

    Yoo, T.-W.; Chang, K.

    1991-01-01

    A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

  4. The Effects of Space Radiation on Linear Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Johnston, A.

    2000-01-01

    Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunctions.

  5. Radiation-hardened transistor and integrated circuit

    DOEpatents

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  6. Long-wavelength photonic integrated circuits and avalanche photodetectors

    NASA Astrophysics Data System (ADS)

    Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

  7. Chemical etching for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1981-01-01

    Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included.

  8. The role of power integrated circuits in lightweight spacecraft

    NASA Technical Reports Server (NTRS)

    Klein, John W.; Theisinger, Peter C.

    1988-01-01

    This paper will present definitions for smart power and power integrated circuits and show how, for a typical planetary spacecraft power system, a 37 percent reduction in mass, 89 percent reduction in parts and a 50 percent reduction in volume can be attained. Also discussed are the technology needs for isolation, monolithic current sensing, and high efficiency switching necessary to enable monolithic power structures, as well as various applications of power integrated circuits. A specific example will verify the projected reductions expected when power integrated circuits are implemented in future spacecraft designs. In conclusion, power-integrated circuits can impact the overall design of the spacecraft in all subsystems, not just the power sybsystem.

  9. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  10. Addressable-Matrix Integrated-Circuit Test Structure

    NASA Technical Reports Server (NTRS)

    Sayah, Hoshyar R.; Buehler, Martin G.

    1991-01-01

    Method of quality control based on use of row- and column-addressable test structure speeds collection of data on widths of resistor lines and coverage of steps in integrated circuits. By use of straightforward mathematical model, line widths and step coverages deduced from measurements of electrical resistances in each of various combinations of lines, steps, and bridges addressable in test structure. Intended for use in evaluating processes and equipment used in manufacture of application-specific integrated circuits.

  11. Integrated-circuit balanced parametric amplifier

    NASA Technical Reports Server (NTRS)

    Dickens, L. E.

    1975-01-01

    Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

  12. Integrated Circuit Failure Analysis Expert System

    1995-10-03

    The software assists a failure analyst performing failure anaysis on intergrated circuits. The software can also be used to train inexperienced failure analysts. The software also provides a method for storing information and making it easily available to experienced failure analysts.

  13. Circuit-level input integration in bacterial gene regulation.

    PubMed

    Espinar, Lorena; Dies, Marta; Cagatay, Tolga; Süel, Gürol M; Garcia-Ojalvo, Jordi

    2013-04-23

    Gene regulatory circuits can receive multiple simultaneous inputs, which can enter the system through different locations. It is thus necessary to establish how these genetic circuits integrate multiple inputs as a function of their relative entry points. Here, we use the dynamic circuit regulating competence for DNA uptake in Bacillus subtilis as a model system to investigate this issue. Specifically, we map the response of single cells in vivo to a combination of (i) a chemical signal controlling the constitutive expression of key competence genes, and (ii) a genetic perturbation in the form of copy number variation of one of these genes, which mimics the level of stress signals sensed by the bacteria. Quantitative time-lapse fluorescence microscopy shows that a variety of dynamical behaviors can be reached by the combination of the two inputs. Additionally, the integration depends strongly on the relative locations where the two perturbations enter the circuit. Specifically, when the two inputs act upon different circuit elements, their integration generates novel dynamical behavior, whereas inputs affecting the same element do not. An in silico bidimensional bifurcation analysis of a mathematical model of the circuit offers good quantitative agreement with the experimental observations, and sheds light on the dynamical mechanisms leading to the different integrated responses exhibited by the gene regulatory circuit. PMID:23572583

  14. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  15. Metallization technology for tenth-micron range integrated circuits

    SciTech Connect

    Berry, L.A.; Harper, M.E.

    1996-11-27

    A critical step in the fabrication of integrated circuits is the deposition of metal layers which interconnect the various circuit elements that have been formed in earlier process steps. In particular, columns of copper several times higher than the characteristic dimension of the circuit elements was needed. Features with a diameter of a few tenths of a micron and a height of about one micron need to be filled at rates in the half to one micron per minute range. With the successful development of a copper deposition technology meeting these requirements, integrated circuits with simpler designs and higher performance could be economically manufactured. Several technologies for depositing copper were under development. No single approach had an optimum combination of performance (feature characteristics), cost (deposition rates), and manufacturability (integration with other processes and tool reliability). Chemical vapor deposition, plating, sputtering and ionized-physical vapor deposition (I-PVD) were all candidate technologies. Within this project, the focus was on I-PVD.

  16. Optical integrated circuits and networks on microscale/nanoscale

    NASA Astrophysics Data System (ADS)

    Lee, El-Hang; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.; Song, S. H.

    2007-02-01

    We present an overview of our work on the design and fabrication of micro/nano-scale photonic circuits and networks on what we call "optical printed circuit boards" (O-PCBs) and "VLSI photonic integrated circuit chips"(VLSI-PICs) of generic and application-specific nature. The O-PCBs and photonic chips consist of 2-dimensional planar arrays of optical wires, circuits, and networks of micro/nano-scale to perform the functions of sensing, storing, transporting, processing, switching, routing, and distributing optical signals on flat boards or chips. We describe and discuss scientific and technological issues concerning the miniaturization, interconnection and integration of micro/nano-scale photonic devices, circuits, and networks leading to small and very large scale integration in terms of photonic scaling rules and discuss their use for the design and fabrication of the photonic integrated circuits and networks. Design rules for the miniaturization and integration of the micro/nano-photonic systems are discussed in comparison with those of the micro/nano-electronic systems. Materials include polymer/organic materials and silicon materials. Structural bases include photonic crystals, ring resonators, and plasmonic structures. Compatibility issues between diverse materials and devices are discussed especially in regard to applications. Recent progresses and examples are presented.

  17. Integrated Circuit For Simulation Of Neural Network

    NASA Technical Reports Server (NTRS)

    Thakoor, Anilkumar P.; Moopenn, Alexander W.; Khanna, Satish K.

    1988-01-01

    Ballast resistors deposited on top of circuit structure. Cascadable, programmable binary connection matrix fabricated in VLSI form as basic building block for assembly of like units into content-addressable electronic memory matrices operating somewhat like networks of neurons. Connections formed during storage of data, and data recalled from memory by prompting matrix with approximate or partly erroneous signals. Redundancy in pattern of connections causes matrix to respond with correct stored data.

  18. Multi-channel detector readout method and integrated circuit

    DOEpatents

    Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

    2004-05-18

    An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

  19. Multi-channel detector readout method and integrated circuit

    DOEpatents

    Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

    2006-12-12

    An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

  20. RF Testing Of Microwave Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Romanofsky, R. R.; Ponchak, G. E.; Shalkhauser, K. A.; Bhasin, K. B.

    1988-01-01

    Fixtures and techniques are undergoing development. Four test fixtures and two advanced techniques developed in continuing efforts to improve RF characterization of MMIC's. Finline/waveguide test fixture developed to test submodules of 30-GHz monolithic receiver. Universal commercially-manufactured coaxial test fixture modified to enable characterization of various microwave solid-state devices in frequency range of 26.5 to 40 GHz. Probe/waveguide fixture is compact, simple, and designed for non destructive testing of large number of MMIC's. Nondestructive-testing fixture includes cosine-tapered ridge, to match impedance wavequide to microstrip. Advanced technique is microwave-wafer probing. Second advanced technique is electro-optical sampling.

  1. Simulation of proton-induced energy deposition in integrated circuits

    NASA Technical Reports Server (NTRS)

    Fernald, Kenneth W.; Kerns, Sherra E.

    1988-01-01

    A time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-disposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.

  2. Development of thermionic integrated circuits for applications in hostile environments

    SciTech Connect

    McCormik, J.B.; Lynn, D.K.; Wilde, D.; Cowan, R.; Hamilton, D.J.; Kerwin, W.; Dooley, R.

    1984-04-10

    This report describes a class of devices known as thermionic integrated circuits (TICs) that are capable of extended operation in ambient temperatures up to 500/sup 0/C and in high radiation environments. The evolution of the TIC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500/sup 0/C environments for extended periods of time.

  3. Development of integrated thermionic circuits for high-temperature applications

    SciTech Connect

    McCormick, J.B.; Wilde, D.; Depp, S.; Hamilton, D.J.; Kerwin, W.

    1981-01-01

    This report describes a class of microminiature, thin film devices known as integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500/sup 0/C. The evolution of the ITC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500/sup 0/C environments for extended periods of time (greater than 11,000 hours).

  4. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    1984-01-01

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  5. Single Event Transients in Linear Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Buchner, Stephen; McMorrow, Dale

    2005-01-01

    On November 5, 2001, a processor reset occurred on board the Microwave Anisotropy Probe (MAP), a NASA mission to measure the anisotropy of the microwave radiation left over from the Big Bang. The reset caused the spacecraft to enter a safehold mode from which it took several days to recover. Were that to happen regularly, the entire mission would be compromised, so it was important to find the cause of the reset and, if possible, to mitigate it. NASA assembled a team of engineers that included experts in radiation effects to tackle the problem. The first clue was the observation that the processor reset occurred during a solar event characterized by large increases in the proton and heavy ion fluxes emitted by the sun. To the radiation effects engineers on the team, this strongly suggested that particle radiation might be the culprit, particularly when it was discovered that the reset circuit contained three voltage comparators (LM139). Previous testing revealed that large voltage transients, or glitches appeared at the output of the LM139 when it was exposed to a beam of heavy ions [NI96]. The function of the reset circuit was to monitor the supply voltage and to issue a reset command to the processor should the voltage fall below a reference of 2.5 V [PO02]. Eventually, the team of engineers concluded that ionizing particle radiation from the solar event produced a negative voltage transient on the output of one of the LM139s sufficiently large to reset the processor on MAP. Fortunately, as of the end of 2004, only two such resets have occurred. The reset on MAP was not the first malfunction on a spacecraft attributed to a transient. That occurred shortly after the launch of NASA s TOPEX/Poseidon satellite in 1992. It was suspected, and later confirmed, that an anomaly in the Earth Sensor was caused by a transient in an operational amplifier (OP-15) [KO93]. Over the next few years, problems on TDRS, CASSINI, [PR02] SOHO [HA99,HA01] and TERRA were also attributed

  6. Integral testing of relays and circuit breakers

    SciTech Connect

    Bandyopadhyay, K.K.

    1993-12-31

    Among all equipment types considered for seismic qualification, relays have been most extensively studied through testing due to a wide variation of their designs and seismic capacities. A temporary electrical discontinuity or ``chatter`` is the common concern for relays. A chatter duration of 2 milliseconds is typically used as an acceptance criterion to determine the seismic capability of a relay. Many electrical devices, on the other hand, receiving input signals from relays can safely tolerate a chatter level much greater than 2 ms. In Phase I of a test program, Brookhaven National Laboratory performed testing of many relay models using the 2-ms chatter criterion. In Phase II of the program, the factors influencing the relay chatter criterion, and impacts of relay chatter on medium and low voltage circuit breakers and lockout relays were investigated. This paper briefly describes the Phase II tests and presents the important observations.

  7. System-Level Integrated Circuit (SLIC) development for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Shalkhauser, K. A.; Raquet, C. A.

    1991-01-01

    A microwave/millimeter wave system-level integrated circuit (SLIC) being developed for use in phased array antenna applications is described. The program goal is to design, fabricate, test, and deliver an advanced integrated circuit that merges radio frequency (RF) monolithic microwave integrated circuit (MMIC) technologies with digital, photonic, and analog circuitry that provide control, support, and interface functions. As a whole, the SLIC will offer improvements in RF device performance, uniformity, and stability while enabling accurate, rapid, repeatable control of the RF signal. Furthermore, the SLIC program addresses issues relating to insertion of solid state devices into antenna systems, such as the reduction in number of bias, control, and signal lines. Program goals, approach, and status are discussed.

  8. System-level integrated circuit (SLIC) development for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Shalkhauser, K. A.; Raquet, C. A.

    1991-01-01

    A microwave/millimeter wave system-level integrated circuit (SLIC) being developed for use in phased array antenna applications is described. The program goal is to design, fabricate, test, and deliver an advanced integrated circuit that merges radio frequency (RF) monolithic microwave integrated circuit (MMIC) technologies with digital, photonic, and analog circuitry that provide control, support, and interface functions. As a whole, the SLIC will offer improvements in RF device performance, uniformity, and stability while enabling accurate, rapid, repeatable control of the RF signal. Furthermore, the SLIC program addresses issues relating to insertion of solid state devices into antenna systems, such as the reduction in number of bias, control, and signal lines. Program goals, approach, and status are discussed.

  9. A CMOS integrated timing discriminator circuit for fast scintillation counters

    SciTech Connect

    Jochmann, M.W.

    1998-06-01

    Based on a zero-crossing discriminator using a CR differentiation network for pulse shaping, a new CMOS integrated timing discriminator circuit is proposed for fast (t{sub r} {ge} 2 ns) scintillation counters at the cooler synchrotron COSY-Juelich. By eliminating the input signal`s amplitude information by means of an analog continuous-time divider, a normalized pulse shape at the zero-crossing point is gained over a wide dynamic input amplitude range. In combination with an arming comparator and a monostable multivibrator this yields in a highly precise timing discriminator circuit, that is expected to be useful in different time measurement applications. First measurement results of a CMOS integrated logarithmic amplifier, which is part of the analog continuous-time divider, agree well with the corresponding simulations. Moreover, SPICE simulations of the integrated discriminator circuit promise a time walk well below 200 ps (FWHM) over a 40 dB input amplitude dynamic range.

  10. Silica Integrated Optical Circuits Based on Glass Photosensitivity

    NASA Technical Reports Server (NTRS)

    Abushagur, Mustafa A. G.

    1999-01-01

    Integrated optical circuits play a major rule in the new photonics technology both in communication and sensing due to their small size and compatibility with integrated circuits. Currently integrated optical circuits (IOCs) are fabricated using similar manufacturing to those used in the semiconductor industry. In this study we are considering a new technique to fabricate IOCs which does not require layers of photolithography, depositing and etching. This method is based on the photosensitivity of germanosilicate glasses. Waveguides and other IOC devises can be patterned in these glasses by exposing them using UV lasers. This exposure by UV light changes the index of refraction of the germanosilicate glass. This technique enjoys both the simplicity and flexibility of design and fabrication with also the potential of being fast and low cost.

  11. Advanced integrated safeguards at Barnwell

    SciTech Connect

    Bambas, K.J.; Barnes, L.D.

    1980-06-01

    The development and initial performance testing of an advanced integrated safeguards system at the Barnwell Nuclear Fuel Plant (BNFP) is described. The program concentrates on the integration and coordination of physical security and nuclear materials control and accounting at a single location. Hardware and software for this phase have been installed and are currently being evaluated. The AGNS/DOE program is now in its third year of development at the BNFP.

  12. 3D circuit integration for Vertex and other detectors

    SciTech Connect

    Yarema, Ray; /Fermilab

    2007-09-01

    High Energy Physics continues to push the technical boundaries for electronics. There is no area where this is truer than for vertex detectors. Lower mass and power along with higher resolution and radiation tolerance are driving forces. New technologies such as SOI CMOS detectors and three dimensional (3D) integrated circuits offer new opportunities to meet these challenges. The fundamentals for SOI CMOS detectors and 3D integrated circuits are discussed. Examples of each approach for physics applications are presented. Cost issues and ways to reduce development costs are discussed.

  13. Thermally-induced voltage alteration for integrated circuit analysis

    DOEpatents

    Cole, Jr., Edward I.

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  14. Practical applications of digital integrated circuits. Part 3: Practical sequential theory and synchronous circuits

    NASA Technical Reports Server (NTRS)

    1973-01-01

    Here, the 7400 line of transistor to transistor logic (TTL) devices is emphasized almost exclusively where hardware is concerned. However, it should be noted that the logic theory contained herein applies to all hardware. Discussed here are synchronous binary UP counters, synchronous DOWN and UP/DOWN counters, integrated circuit counters, shift registers, sequential techniques, and designing sequential counting machines.

  15. Integrated logic circuits using single-atom transistors

    PubMed Central

    Mol, J. A.; Verduijn, J.; Levine, R. D.; Remacle, F.

    2011-01-01

    Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal–oxide–semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

  16. Integrated logic circuits using single-atom transistors.

    PubMed

    Mol, J A; Verduijn, J; Levine, R D; Remacle, F; Rogge, S

    2011-08-23

    Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

  17. MIRAGE read-in integrated circuit testing results

    NASA Astrophysics Data System (ADS)

    Hoelter, Theodore R.; Henry, Blake A.; Graff, John H.; Aziz, Naseem Y.

    1999-07-01

    This paper describes the test results for the MIRAGE read- in-integrated-circuit (RIIC) designed by Indigo Systems Corporation. This RIIC, when mated with suspended membrane, micro-machined resistive elements, forms a highly advanced emitter array. This emitter array is used by Indigo and Santa Barbara Infrared Incorporated in a jointly developed product for infrared scene generation, called MIRAGE. The MIRAGE RIIC is a 512 X 512 pixel design which incorporates a number of features that extend the state of the art for emitter array RIIC devices. These innovations include an all-digital interface for scene data, snapshot image updates (all pixels show the new frame simultaneously), frame rates up to 200 Hz, operating modes that control the device output, power consumption, and diagnostic configuration. Tests measuring operating speed, RIIC functionality and D/A converter performance were completed. At 2.1 X 2.3 cm, this die is also the largest nonstitched device ever made by Indigo's foundry, American Microsystems Incorporated. As with any IC design, die yield is a critical factor that typically scales with the size and complexity. Die yield, and a statistical breakdown of the failures observed will be discussed.

  18. Printed organic thin-film transistor-based integrated circuits

    NASA Astrophysics Data System (ADS)

    Mandal, Saumen; Noh, Yong-Young

    2015-06-01

    Organic electronics is moving ahead on its journey towards reality. However, this technology will only be possible when it is able to meet specific criteria including flexibility, transparency, disposability and low cost. Printing is one of the conventional techniques to deposit thin films from solution-based ink. It is used worldwide for visual modes of information, and it is now poised to enter into the manufacturing processes of various consumer electronics. The continuous progress made in the field of functional organic semiconductors has achieved high solubility in common solvents as well as high charge carrier mobility, which offers ample opportunity for organic-based printed integrated circuits. In this paper, we present a comprehensive review of all-printed organic thin-film transistor-based integrated circuits, mainly ring oscillators. First, the necessity of all-printed organic integrated circuits is discussed; we consider how the gap between printed electronics and real applications can be bridged. Next, various materials for printed organic integrated circuits are discussed. The features of these circuits and their suitability for electronics using different printing and coating techniques follow. Interconnection technology is equally important to make this product industrially viable; much attention in this review is placed here. For high-frequency operation, channel length should be sufficiently small; this could be achievable with a combination of surface treatment-assisted printing or laser writing. Registration is also an important issue related to printing; the printed gate should be perfectly aligned with the source and drain to minimize parasitic capacitances. All-printed organic inverters and ring oscillators are discussed here, along with their importance. Finally, future applications of all-printed organic integrated circuits are highlighted.

  19. Topological Properties of Some Integrated Circuits for Very Large Scale Integration Chip Designs

    NASA Astrophysics Data System (ADS)

    Swanson, S.; Lanzerotti, M.; Vernizzi, G.; Kujawski, J.; Weatherwax, A.

    2015-03-01

    This talk presents topological properties of integrated circuits for Very Large Scale Integration chip designs. These circuits can be implemented in very large scale integrated circuits, such as those in high performance microprocessors. Prior work considered basic combinational logic functions and produced a mathematical framework based on algebraic topology for integrated circuits composed of logic gates. Prior work also produced an historically-equivalent interpretation of Mr. E. F. Rent's work for today's complex circuitry in modern high performance microprocessors, where a heuristic linear relationship was observed between the number of connections and number of logic gates. This talk will examine topological properties and connectivity of more complex functionally-equivalent integrated circuits. The views expressed in this article are those of the author and do not reflect the official policy or position of the United States Air Force, Department of Defense or the U.S. Government.

  20. Shape determination and placement algorithms for hierarchical integrated circuit layout

    NASA Astrophysics Data System (ADS)

    Slutz, E. A.

    Algorithms for the automatic layout of integrated circuits are presented. The algorithms use a hierarchical decomposition of the circuit structure. Since this reduces the complexity of the design, it is an aid to the designer as well as the means of making possible the automated approach to layout. The layout method consists of two phases: a top-down phase during which the shapes of the components at each level are determined, followed by a bottomup phase where a final placement and routing for each level is computed. The data structure used to model the chip surface is central to the algorithms. This data structure is presented along with the alternative structures. Four basic operations of adding components, deleting components, sizing, and building the structure for a given placement are described. A file format for capturing integrated circuit design information is also described.

  1. Recent advances in integrated photonic sensors.

    PubMed

    Passaro, Vittorio M N; de Tullio, Corrado; Troia, Benedetto; La Notte, Mario; Giannoccaro, Giovanni; De Leonardis, Francesco

    2012-01-01

    Nowadays, optical devices and circuits are becoming fundamental components in several application fields such as medicine, biotechnology, automotive, aerospace, food quality control, chemistry, to name a few. In this context, we propose a complete review on integrated photonic sensors, with specific attention to materials, technologies, architectures and optical sensing principles. To this aim, sensing principles commonly used in optical detection are presented, focusing on sensor performance features such as sensitivity, selectivity and rangeability. Since photonic sensors provide substantial benefits regarding compatibility with CMOS technology and integration on chips characterized by micrometric footprints, design and optimization strategies of photonic devices are widely discussed for sensing applications. In addition, several numerical methods employed in photonic circuits and devices, simulations and design are presented, focusing on their advantages and drawbacks. Finally, recent developments in the field of photonic sensing are reviewed, considering advanced photonic sensor architectures based on linear and non-linear optical effects and to be employed in chemical/biochemical sensing, angular velocity and electric field detection. PMID:23202223

  2. Recent Advances in Integrated Photonic Sensors

    PubMed Central

    Passaro, Vittorio M. N.; de Tullio, Corrado; Troia, Benedetto; La Notte, Mario; Giannoccaro, Giovanni; De Leonardis, Francesco

    2012-01-01

    Nowadays, optical devices and circuits are becoming fundamental components in several application fields such as medicine, biotechnology, automotive, aerospace, food quality control, chemistry, to name a few. In this context, we propose a complete review on integrated photonic sensors, with specific attention to materials, technologies, architectures and optical sensing principles. To this aim, sensing principles commonly used in optical detection are presented, focusing on sensor performance features such as sensitivity, selectivity and rangeability. Since photonic sensors provide substantial benefits regarding compatibility with CMOS technology and integration on chips characterized by micrometric footprints, design and optimization strategies of photonic devices are widely discussed for sensing applications. In addition, several numerical methods employed in photonic circuits and devices, simulations and design are presented, focusing on their advantages and drawbacks. Finally, recent developments in the field of photonic sensing are reviewed, considering advanced photonic sensor architectures based on linear and non-linear optical effects and to be employed in chemical/biochemical sensing, angular velocity and electric field detection. PMID:23202223

  3. Integrated circuit with dissipative layer for photogenerated carriers

    DOEpatents

    Myers, D.R.

    1988-04-20

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

  4. Performance of digital integrated circuit technologies at very high temperatures

    SciTech Connect

    Prince, J.L.; Draper, B.L.; Rapp, E.A.; Kromberg, J.N.; Fitch, L.T.

    1980-01-01

    Results of investigations of the performance and reliability of digital bipolar and CMOS integrated circuits over the 25 to 340/sup 0/C range are reported. Included in these results are both parametric variation information and analysis of the functional failure mechanisms. Although most of the work was done using commercially available circuits (TTL and CMOS) and test chips from commercially compatible processes, some results of experimental simulations of dielectrically isolated CMOS are also discussed. It was found that commercial Schottky clamped TTL, and dielectrically isolated, low power Schottky-clamped TTL, functioned to junction temperatures in excess of 325/sup 0/C. Standard gold doped TTL functioned only to 250/sup 0/C, while commercial, isolated I/sup 2/L functioned to the range 250/sup 0/C to 275/sup 0/C. Commercial junction isolated CMOS, buffered and unbuffered, functioned to the range 280/sup 0/C to 310/sup 0/C/sup +/, depending on the manufacturer. Experimental simulations of simple dielectrically isolated CMOS integrated circuits, fabricated with heavier doping levels than normal, functioned to temperatures in excess of 340/sup 0/C. High temperature life testing of experimental, silicone-encapsulated simple TTL and CMOS integrated circuits have shown no obvious life limiting problems to date. No barrier to reliable functionality of TTL bipolar or CMOS integrated ciruits at temperatures in excess of 300/sup 0/C has been found.

  5. Chemical vapor deposition for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1980-01-01

    Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

  6. 1998 technology roadmap for integrated circuits used in critical applications

    SciTech Connect

    Dellin, T.A.

    1998-09-01

    Integrated Circuits (ICs) are being extensively used in commercial and government applications that have extreme consequences of failure. The rapid evolution of the commercial microelectronics industry presents serious technical and supplier challenges to this niche critical IC marketplace. This Roadmap was developed in conjunction with the Using ICs in Critical Applications Workshop which was held in Albuquerque, NM, November 11--12, 1997.

  7. FASTHELP. Integrated Circuit Failure Analysis Hypertext Help System

    SciTech Connect

    Henderson, C.; Barton, D.; Campbell, A.; Cole, E.; Mikawa, R.E.; Peterson, K.A.; Rife, J.L.; Soden, J.M.

    1994-09-30

    This software assists a failure analyst performing failure analysis on integrated circuits. The software can also be used to train inexperienced failure analysts. The software also provides a method for storing information and making it easily available to experienced failure analysts.

  8. Bioluminescent bioreporter integrated circuit devices and methods for detecting ammonia

    DOEpatents

    Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN

    2007-04-24

    Monolithic bioelectronic devices for the detection of ammonia includes a microorganism that metabolizes ammonia and which harbors a lux gene fused with a heterologous promoter gene stably incorporated into the chromosome of the microorganism and an Optical Application Specific Integrated Circuit (OASIC). The microorganism is generally a bacterium.

  9. Integrated circuit with dissipative layer for photogenerated carriers

    DOEpatents

    Myers, David R.

    1989-01-01

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissi The U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.

  10. Integrated circuit with dissipative layer for photogenerated carriers

    DOEpatents

    Myers, D.R.

    1989-09-12

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissi The U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.

  11. An integrated circuit/packet switched videoconferencing system

    SciTech Connect

    Kippenhan, H.A. Jr.; Lidinsky, W.P.; Roediger, G.A.; Watts, T.A.

    1995-11-01

    The HEP Network Resource Center (HEPNRC) at Fermilab and the Collider Detector Facility (CDF) collaboration have evolved a flexible, cost-effective, widely accessible videoconferencing system for use by high energy physics collaborations and others wishing to use videoconferencing. No current systems seemed to fully meet the needs of high energy physics collaborations. However, two classes of videoconferencing technology: circuit-switched and packet-switched, if integrated, might encompass most of HEP`s needs. It was also realized that, even with this integration, some additional functions were needed and some of the existing functions were not always wanted. HEPNRC with the help of members of the CDF collaboration set out to develop such an integrated system using as many existing subsystems and components as possible. This system is called VUPAC (Videoconferencing Using PAckets and Circuits). This paper begins with brief descriptions of the circuit-switched and packet-switched videoconferencing systems. Following this, issues and limitations of these systems are considered. Next the VUPAC system is described. Integration is accomplished primarily by a circuit/packet videoconferencing interface. Augmentation is centered in another subsystem called MSB (Multiport multisession Bridge). Finally, there is a discussion of the future work needed in the evolution of this system.

  12. Radiation damage in MOS integrated circuits, Part 1

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1971-01-01

    Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

  13. Flexible circuits with integrated switches for robotic shape sensing

    NASA Astrophysics Data System (ADS)

    Harnett, C. K.

    2016-05-01

    Digital switches are commonly used for detecting surface contact and limb-position limits in robotics. The typical momentary-contact digital switch is a mechanical device made from metal springs, designed to connect with a rigid printed circuit board (PCB). However, flexible printed circuits are taking over from the rigid PCB in robotics because the circuits can bend while carrying signals and power through moving joints. This project is motivated by a previous work where an array of surface-mount momentary contact switches on a flexible circuit acted as an all-digital shape sensor compatible with the power resources of energy harvesting systems. Without a rigid segment, the smallest commercially-available surface-mount switches would detach from the flexible circuit after several bending cycles, sometimes violently. This report describes a low-cost, conductive fiber based method to integrate electromechanical switches into flexible circuits and other soft, bendable materials. Because the switches are digital (on/off), they differ from commercially-available continuous-valued bend/flex sensors. No amplification or analog-to-digital conversion is needed to read the signal, but the tradeoff is that the digital switches only give a threshold curvature value. Boundary conditions on the edges of the flexible circuit are key to setting the threshold curvature value for switching. This presentation will discuss threshold-setting, size scaling of the design, automation for inserting a digital switch into the flexible circuit fabrication process, and methods for reconstructing a shape from an array of digital switch states.

  14. Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

    PubMed

    Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

    2015-10-14

    We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates. PMID:26407206

  15. Modeling of single-event upset in bipolar integrated circuits

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.

    1983-01-01

    The results of work done on the quantitative characterization of single-event upset (SEU) in bipolar random-access memories (RAMs) have been obtained through computer simulation of SEU in RAM cells that contain circuit models for bipolar transistors. The models include current generators that emulate the charge collected from ion tracks. The computer simulation results are compared with test data obtained from a RAM in a bipolar microprocessor chip. This methodology is applicable to other bipolar integrated circuit constructions in addition to RAM cells.

  16. Conductus makes high-T sub c integrated circuit

    SciTech Connect

    Not Available

    1991-01-01

    This paper reports that researchers at Conductus have successfully demonstrated what the company says is the world's first integrated circuit containing active devices made from high-temperature superconductors. The circuit is a SQUID magnetometer made from seven layers of material: three layers of yttrium-barium-copper oxide, two layers of insulating material, a seed layer to create grain boundaries for the Josephson junctions, and a layer of silver for making electrical contact to the device. The chip also contains vias, or pathways that make a superconducting contact between the superconducting layers otherwise separated by insulators. Conductus had previously announced the development of a SQUID magnetometer that featured a SQUID sensor and a flux transformer manufactured on separate chips. What makes this achievement important is that the company was able to put both components on the same chip, thus creating a simple integrated circuit on a single chip. This is still a long way from conventional semiconductor technology, with as many as a million components per chip, or even the sophisticated low-Tc superconducting chips made by the Japanese, but the SQUID magnetometer demonstrates all the elements and techniques necessary to build more complex high-temperature superconductor integrated circuits, making this an important first step.

  17. Millimeter-wave and terahertz integrated circuit antennas

    NASA Technical Reports Server (NTRS)

    Rebeiz, Gabriel M.

    1992-01-01

    This paper presents a comprehensive review of integrated circuit antennas suitable for millimeter and terahertz applications. A great deal of research was done on integrated circuit antennas in the last decade and many of the problems associated with electrically thick dielectric substrates, such as substrate modes and poor radiation patterns, have been understood and solved. Several new antennas, such as the integrated horn antenna, the dielectric-filled parabola, the Fresnel plate antenna, the dual-slot antenna, and the log-periodic and spiral antennas on extended hemispherical lenses, have resulted in excellent performance at millimeter-wave frequencies, and are covered in detail in this paper. Also, a review of the efficiency definitions used with planar antennas is given in detail in the appendix.

  18. Integrated circuit electrometer and sweep circuitry for an atmospheric probe

    NASA Technical Reports Server (NTRS)

    Zimmerman, L. E.

    1971-01-01

    The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

  19. Monolithic Microwave Integrated Circuit (MMIC) Phased Array Demonstrated With ACTS

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Monolithic Microwave Integrated Circuit (MMIC) arrays developed by the NASA Lewis Research Center and the Air Force Rome Laboratory were demonstrated in aeronautical terminals and in mobile or fixed Earth terminals linked with NASA's Advanced Communications Technology Satellite (ACTS). Four K/Ka-band experimental arrays were demonstrated between May 1994 and May 1995. Each array had GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The 30-GHz transmit array used in uplinks to ACTS was developed by Lewis and Texas Instruments. The three 20-GHz receive arrays used in downlinks from ACTS were developed in cooperation with the Air Force Rome Laboratory, taking advantage of existing Air Force integrated-circuit, active-phased-array development contracts with the Boeing Company and Lockheed Martin Corporation. Four demonstrations, each related to an application of high interest to both commercial and Department of Defense organizations, were conducted. The location, type of link, and the data rate achieved for each of the applications is shown. In one demonstration-- an aeronautical terminal experiment called AERO-X--a duplex voice link between an aeronautical terminal on the Lewis Learjet and ACTS was achieved. Two others demonstrated duplex voice links (and in one case, interactive video links as well) between ACTS and an Army high-mobility, multipurpose wheeled vehicle (HMMWV, or "humvee"). In the fourth demonstration, the array was on a fixed mount and was electronically steered toward ACTS. Lewis served as project manager for all demonstrations and as overall system integrator. Lewis engineers developed the array system including a controller for open-loop tracking of ACTS during flight and HMMWV motion, as well as a laptop data display and recording system used in all demonstrations. The Jet Propulsion Laboratory supported the AERO-X program, providing elements of the ACTS Mobile Terminal. The successful

  20. Watching chips work: picosecond hot electron light emission from integrated circuits

    NASA Astrophysics Data System (ADS)

    Kash, J. A.; Tsang, J. C.

    2000-03-01

    The picosecond pulses of hot carrier luminescence that are observed from individual submicron FETs in CMOS circuits can be used to describe the internal operation of integrated circuits. To effectively use the weak emission pulses, we have developed a method called picosecond integrated circuit analysis (PICA) which simultaneously images and time resolves the emission. PICA has been used to characterize the operation of integrated circuits from simple ring oscillators to a full microprocessors. Examples of circuit characterization and fault diagnosis are presented.

  1. Attachment method for stacked integrated circuit (IC) chips

    DOEpatents

    Bernhardt, Anthony F.; Malba, Vincent

    1999-01-01

    An attachment method for stacked integrated circuit (IC) chips. The method involves connecting stacked chips, such as DRAM memory chips, to each other and/or to a circuit board. Pads on the individual chips are rerouted to form pads on the side of the chip, after which the chips are stacked on top of each other whereby desired interconnections to other chips or a circuit board can be accomplished via the side-located pads. The pads on the side of a chip are connected to metal lines on a flexible plastic tape (flex) by anisotropically conductive adhesive (ACA). Metal lines on the flex are likewise connected to other pads on chips and/or to pads on a circuit board. In the case of a stack of DRAM chips, pads to corresponding address lines on the various chips may be connected to the same metal line on the flex to form an address bus. This method has the advantage of reducing the number of connections required to be made to the circuit board due to bussing; the flex can accommodate dimensional variation in the alignment of chips in the stack; bonding of the ACA is accomplished at low temperature and is otherwise simpler and less expensive than solder bonding; chips can be bonded to the ACA all at once if the sides of the chips are substantially coplanar, as in the case for stacks of identical chips, such as DRAM.

  2. Attachment method for stacked integrated circuit (IC) chips

    DOEpatents

    Bernhardt, A.F.; Malba, V.

    1999-08-03

    An attachment method for stacked integrated circuit (IC) chips is disclosed. The method involves connecting stacked chips, such as DRAM memory chips, to each other and/or to a circuit board. Pads on the individual chips are rerouted to form pads on the side of the chip, after which the chips are stacked on top of each other whereby desired interconnections to other chips or a circuit board can be accomplished via the side-located pads. The pads on the side of a chip are connected to metal lines on a flexible plastic tape (flex) by anisotropically conductive adhesive (ACA). Metal lines on the flex are likewise connected to other pads on chips and/or to pads on a circuit board. In the case of a stack of DRAM chips, pads to corresponding address lines on the various chips may be connected to the same metal line on the flex to form an address bus. This method has the advantage of reducing the number of connections required to be made to the circuit board due to bussing; the flex can accommodate dimensional variation in the alignment of chips in the stack; bonding of the ACA is accomplished at low temperature and is otherwise simpler and less expensive than solder bonding; chips can be bonded to the ACA all at once if the sides of the chips are substantially coplanar, as in the case for stacks of identical chips, such as DRAM. 12 figs.

  3. Organic printed photonics: From microring lasers to integrated circuits.

    PubMed

    Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

    2015-09-01

    A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

  4. Organic printed photonics: From microring lasers to integrated circuits

    PubMed Central

    Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

    2015-01-01

    A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

  5. Low voltage pentacene OTFT integration for smart sensor control circuits

    NASA Astrophysics Data System (ADS)

    Kumar, Prashanth S.; Rai, Pratyush; Mathur, Gyanesh N.; Varadan, Vijay K.

    2010-04-01

    The past decade has witnessed remarkable progress in Organic electronics and Organic sensor technology on flexible substrates. Temperature and strain sensors for wireless active health monitoring systems have been tested and demonstrated. These sensors need control circuits to condition and transmit the measurand to the data acquisition system. The control circuits have to be incorporated on to the same substrate as the sensing element. So far, Pentacene based Organic Thin-Film Transistors (OTFTs) have been the most promising candidates for integrated circuit applications. To this end, optimization of the OTFT fabrication process is needed to obtain reliable and reproducible transistor performance in terms of mobility, threshold voltage, drive currents, minimal supply voltage and minimal leakage currents. The objective here is to minimize the leakage losses and the voltage required to drive this circuitry while maintaining process compatibility. The choice of dielectric material has been proven to be a key factor influencing all the desirable characteristics stated above. This paper investigates the feasibility of using a High K/Low K, Tantalum Pentoxide/Poly (4-vinyl phenol) (PVP) hybrid dielectric in Pentacene-based OTFTs to lower the operating voltages. Inverters and simple logic gates like 2-input NAND are simulated with these OTFTs. The results indicate that these OTFTs can indeed be used to build large scale integrated circuits with reproducibility.

  6. Advanced Integration Matrix Education Outreach

    NASA Technical Reports Server (NTRS)

    Paul Heather L.

    2004-01-01

    The Advanced Integration Matrix (AIM) will design a ground-based test facility for developing revolutionary integrated systems for joint human-robotic missions in order to study and solve systems-level integration issues for exploration missions beyond Low Earth Orbit (LEO). This paper describes development plans for educational outreach activities related to technological and operational integration scenarios similar to the challenges that will be encountered through this project. The education outreach activities will provide hands-on, interactive exercises to allow students of all levels to experience design and operational challenges similar to what NASA deals with everyday in performing the integration of complex missions. These experiences will relate to and impact students everyday lives by demonstrating how their interests in science and engineering can develop into future careers, and reinforcing the concepts of teamwork and conflict resolution. Allowing students to experience and contribute to real-world development, research, and scientific studies of ground-based simulations for complex exploration missions will stimulate interest in the space program, and bring NASA's challenges to the student level. By enhancing existing educational programs and developing innovative activities and presentations, AIM will support NASA s endeavor to "inspire the next generation of explorers.. .as only NASA can."

  7. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  8. Gigahertz flexible graphene transistors for microwave integrated circuits.

    PubMed

    Yeh, Chao-Hui; Lain, Yi-Wei; Chiu, Yu-Chiao; Liao, Chen-Hung; Moyano, David Ricardo; Hsu, Shawn S H; Chiu, Po-Wen

    2014-08-26

    Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations. PMID:25062282

  9. Radiation Testing and Evaluation Issues for Modern Integrated Circuits

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Cohn, Lew M.

    2005-01-01

    Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

  10. Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2012-01-01

    Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

  11. Extended life testing evaluation of complementary MOS integrated circuits

    NASA Technical Reports Server (NTRS)

    Brosnan, T. E.

    1972-01-01

    The purpose of the extended life testing evaluation of complementary MOS integrated circuits was twofold: (1) To ascertain the long life capability of complementary MOS devices. (2) To assess the objectivity and reliability of various accelerated life test methods as an indication or prediction tool. In addition, the determination of a suitable life test sequence for these devices was of importance. Conclusions reached based on the parts tested and the test results obtained was that the devices were not acceptable.

  12. Aperture efficiency of integrated-circuit horn antennas

    NASA Technical Reports Server (NTRS)

    Guo, Yong; Lee, Karen; Stimson, Philip; Potter, Kent; Rutledge, David

    1991-01-01

    The aperture efficiency of silicon integrated-circuit horn antennas has been improved by optimizing the length of the dipole probes and by coating the entire horn walls with gold. To make these measurements, a new thin-film power-density meter was developed for measuring power density with accuracies better than 5 percent. The measured aperture efficiency improved from 44 percent to 72 percent at 93 GHz. This is sufficient for use in many applications which now use machined waveguide horns.

  13. A Integrated Circuit for a Biomedical Capacitive Pressure Transducer

    NASA Astrophysics Data System (ADS)

    Smith, Michael John Sebastian

    Medical research has an urgent need for a small, accurate, stable, low-power, biocompatible and inexpensive pressure sensor with a zero to full-scale range of 0-300 mmHg. An integrated circuit (IC) for use with a capacitive pressure transducer was designed, built and tested. The random pressure measurement error due to resolution and non-linearity is (+OR-)0.4 mmHg (at mid-range with a full -scale of 300 mmHg). The long-term systematic error due to falling battery voltage is (+OR-)0.6 mmHg. These figures were calculated from measurements of temperature, supply dependence and non-linearity on completed integrated circuits. The sensor IC allows measurement of temperature to (+OR-)0.1(DEGREES)C to allow for temperature compensation of the transducer. Novel micropower circuit design of the system components enabled these levels of accuracy to be reached. Capacitance is measured by a new ratiometric scheme employing an on -chip reference capacitor. This method greatly reduces the effects of voltage supply, temperature and manufacturing variations on the sensor circuit performance. The limits on performance of the bandgap reference circuit fabricated with a standard bipolar process using ion-implanted resistors were determined. Measurements confirm the limits of temperature stability as approximately (+OR-)300 ppm/(DEGREES)C. An exact analytical expression for the period of the Schmitt trigger oscillator, accounting for non-constant capacitor charging current, was formulated. Experiments to test agreement with theory showed that prediction of the oscillator period was very accurate. The interaction of fundamental and practical limits on the scaling of the transducer size was investigated including a correction to previous theoretical analysis of jitter in an RC oscillator. An areal reduction of 4 times should be achievable.

  14. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  15. Diamond electro-optomechanical resonators integrated in nanophotonic circuits

    SciTech Connect

    Rath, P.; Ummethala, S.; Pernice, W. H. P.; Diewald, S.; Lewes-Malandrakis, G.; Brink, D.; Heidrich, N.; Nebel, C.

    2014-12-22

    Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here, we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.

  16. 77 FR 64826 - Certain Integrated Circuit Chips and Products Containing the Same; Institution of Investigation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-23

    ... COMMISSION Certain Integrated Circuit Chips and Products Containing the Same; Institution of Investigation... integrated circuit chips and products containing the same by reason of infringement of certain claims of U.S... importation of certain integrated circuit chips and products containing the same that infringe one or more...

  17. 78 FR 10635 - Certain Integrated Circuit Devices and Products Containing the Same; Notice of Receipt of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-14

    ... COMMISSION Certain Integrated Circuit Devices and Products Containing the Same; Notice of Receipt of... received a complaint entitled Certain Integrated Circuit Devices and Products Containing the Same, DN 2938..., and the sale within the United States after importation of certain integrated circuit devices...

  18. 77 FR 39735 - Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-05

    ... COMMISSION Certain Integrated Circuit Packages Provided With Multiple Heat- Conducting Paths and Products... the sale within the United States after importation of certain integrated circuit packages provided... integrated circuit packages provided with multiple heat-conducting paths and products containing same...

  19. 76 FR 58041 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-19

    ... COMMISSION Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice... certain digital televisions containing integrated circuit devices and components thereof by reason of... integrated circuit devices and components thereof that infringe one or more of claims 9, 10, 12, 31, 32,...

  20. Pneumatic oscillator circuits for timing and control of integrated microfluidics.

    PubMed

    Duncan, Philip N; Nguyen, Transon V; Hui, Elliot E

    2013-11-01

    Frequency references are fundamental to most digital systems, providing the basis for process synchronization, timing of outputs, and waveform synthesis. Recently, there has been growing interest in digital logic systems that are constructed out of microfluidics rather than electronics, as a possible means toward fully integrated laboratory-on-a-chip systems that do not require any external control apparatus. However, the full realization of this goal has not been possible due to the lack of on-chip frequency references, thus requiring timing signals to be provided from off-chip. Although microfluidic oscillators have been demonstrated, there have been no reported efforts to characterize, model, or optimize timing accuracy, which is the fundamental metric of a clock. Here, we report pneumatic ring oscillator circuits built from microfluidic valves and channels. Further, we present a compressible-flow analysis that differs fundamentally from conventional circuit theory, and we show the utility of this physically based model for the optimization of oscillator stability. Finally, we leverage microfluidic clocks to demonstrate circuits for the generation of phase-shifted waveforms, self-driving peristaltic pumps, and frequency division. Thus, pneumatic oscillators can serve as on-chip frequency references for microfluidic digital logic circuits. On-chip clocks and pumps both constitute critical building blocks on the path toward achieving autonomous laboratory-on-a-chip devices. PMID:24145429

  1. Pneumatic oscillator circuits for timing and control of integrated microfluidics

    PubMed Central

    Duncan, Philip N.; Nguyen, Transon V.; Hui, Elliot E.

    2013-01-01

    Frequency references are fundamental to most digital systems, providing the basis for process synchronization, timing of outputs, and waveform synthesis. Recently, there has been growing interest in digital logic systems that are constructed out of microfluidics rather than electronics, as a possible means toward fully integrated laboratory-on-a-chip systems that do not require any external control apparatus. However, the full realization of this goal has not been possible due to the lack of on-chip frequency references, thus requiring timing signals to be provided from off-chip. Although microfluidic oscillators have been demonstrated, there have been no reported efforts to characterize, model, or optimize timing accuracy, which is the fundamental metric of a clock. Here, we report pneumatic ring oscillator circuits built from microfluidic valves and channels. Further, we present a compressible-flow analysis that differs fundamentally from conventional circuit theory, and we show the utility of this physically based model for the optimization of oscillator stability. Finally, we leverage microfluidic clocks to demonstrate circuits for the generation of phase-shifted waveforms, self-driving peristaltic pumps, and frequency division. Thus, pneumatic oscillators can serve as on-chip frequency references for microfluidic digital logic circuits. On-chip clocks and pumps both constitute critical building blocks on the path toward achieving autonomous laboratory-on-a-chip devices. PMID:24145429

  2. Universal discrete Fourier optics RF photonic integrated circuit architecture.

    PubMed

    Hall, Trevor J; Hasan, Mehedi

    2016-04-01

    This paper describes a coherent electro-optic circuit architecture that generates a frequency comb consisting of N spatially separated orders using a generalised Mach-Zenhder interferometer (MZI) with its N × 1 combiner replaced by an optical N × N Discrete Fourier Transform (DFT). Advantage may be taken of the tight optical path-length control, component and circuit symmetries and emerging trimming algorithms offered by photonic integration in any platform that offers linear electro-optic phase modulation such as LiNbO3, silicon, III-V or hybrid technology. The circuit architecture subsumes all MZI-based RF photonic circuit architectures in the prior art given an appropriate choice of output port(s) and dimension N although the principal application envisaged is phase correlated subcarrier generation for all optical orthogonal frequency division multiplexing. A transfer matrix approach is used to model the operation of the architecture. The predictions of the model are validated by simulations performed using an industry standard software tool. Implementation is found to be practical. PMID:27137048

  3. Advanced packaging for Integrated Micro-Instruments

    NASA Technical Reports Server (NTRS)

    Lyke, James L.

    1995-01-01

    The relationship between packaging, microelectronics, and micro-electrical-mechanical systems (MEMS) is an important one, particularly when the edges of performance boundaries are pressed, as in the case of miniaturized systems. Packaging is a sort of physical backbone that enables the maximum performance of these systems to be realized, and the penalties imposed by conventional packing approaches is particularly limiting for MEMS devices. As such, advanced packaging approaches, such as multi-chip modules (MCM's) have been touted as a true means of electronic 'enablement' for a variety of application domains. Realizing an optimum system of packaging, however, in not as simple as replacing a set of single chip packages with a substrate of interconnections. Research at Phillips Laboratory has turned up a number of integrating options in the two- and three-dimensional rending of miniature systems with physical interconnection structures with intrinsically high performance. Not only do these structures motivate the redesign of integrated circuits (IC's) for lower power, but they possess interesting features that provide a framework for the direct integration of MEMS devices. Cost remains a barrier to the application of MEMS devices, even in space systems. Several innovations are suggested that will result in lower cost and more rapid cycle time. First, the novelty of a 'constant floor plan' MCM which encapsulates a variety of commonly used components into a stockable, easily customized assembly is discussed. Next, the use of low-cost substrates is examined. The anticipated advent of ultra-high density interconnect (UHDI) is suggested as the limit argument of advanced packaging. Finally, the concept of a heterogeneous 3-D MCM system is outlined that allows for the combination of different compatible packaging approaches into a uniformly dense structure that could also include MEMS-based sensors.

  4. Design and status of the RF-digitizer integrated circuit

    NASA Technical Reports Server (NTRS)

    Rayhrer, B.; Lam, B.; Young, L. E.; Srinivasan, J. M.; Thomas, J. B.

    1991-01-01

    An integrated circuit currently under development samples a bandpass-limited signal at a radio frequency in quadrature and then performs a simple sum-and-dump operation in order to filter and lower the rate of the samples. Downconversion to baseband is carried out by the sampling step itself through the aliasing effect of an appropriately selected subharmonic sampling frequency. Two complete RF digitizer circuits with these functions will be implemented with analog and digital elements on one GaAs substrate. An input signal, with a carrier frequency as high as 8 GHz, can be sampled at a rate as high as 600 Msamples/sec for each quadrature component. The initial version of the chip will sign-sample (1-bit) the input RF signal. The chip will contain a synthesizer to generate a sample frequency that is a selectable integer multiple of an input reference frequency. In addition to the usual advantages of compactness and reliability associated with integrated circuits, the single chip will replace several steps required by standard analog downconversion. Furthermore, when a very high initial sample rate is selected, the presampling analog filters can be given very large bandwidths, thereby greatly reducing phase and delay instabilities typically introduced by such filters, as well as phase and delay variation due to Doppler changes.

  5. Design automation for integrated nonlinear logic circuits (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Van Vaerenbergh, Thomas; Pelc, Jason; Santori, Charles; Bose, Ranojoy; Kielpinski, Dave; Beausoleil, Raymond G.

    2016-05-01

    A key enabler of the IT revolution of the late 20th century was the development of electronic design automation (EDA) tools allowing engineers to manage the complexity of electronic circuits with transistor counts now reaching into the billions. Recently, we have been developing large-scale nonlinear photonic integrated logic circuits for next generation all-optical information processing. At this time a sufficiently powerful EDA-style software tool chain to design this type of complex circuits does not yet exist. Here we describe a hierarchical approach to automating the design and validation of photonic integrated circuits, which can scale to several orders of magnitude higher complexity than the state of the art. Most photonic integrated circuits developed today consist of a small number of components, and only limited hierarchy. For example, a simple photonic transceiver may contain on the order of 10 building-block components, consisting of grating couplers for photonic I/O, modulators, and signal splitters/combiners. Because this is relatively easy to lay out by hand (or simple script) existing photonic design tools have relatively little automation in comparison to electronics tools. But demonstrating all-optical logic will require significantly more complex photonic circuits containing up to 1,000 components, hence becoming infeasible to design manually. Our design framework is based off Python-based software from Luceda Photonics which provides an environment to describe components, simulate their behavior, and export design files (GDS) to foundries for fabrication. At a fundamental level, a photonic component is described as a parametric cell (PCell) similarly to electronics design. PCells are described by geometric characteristics of their layout. A critical part of the design framework is the implementation of PCells as Python objects. PCell objects can then use inheritance to simplify design, and hierarchical designs can be made by creating composite

  6. Integrated diode circuits for greater than 1 THz

    NASA Astrophysics Data System (ADS)

    Schoenthal, Gerhard Siegbert

    The terahertz frequency band, spanning from roughly 100 GHz to 10 THz, forms the transition from electronics to photonics. This band is often referred to as the "terahertz technology gap" because it lacks typical microwave and optical components. The deficit of terahertz devices makes it difficult to conduct important scientific measurements that are exclusive to this band in fields such as radio astronomy and chemical spectroscopy. In addition, a number of scientific, military and commercial applications will become more practical when a suitable terahertz technology is developed. UVa's Applied Electrophysics Laboratory has extended non-linear microwave diode technology into the terahertz region. Initial success was achieved with whisker-contacted diodes and then discrete planar Schottky diodes soldered onto quartz circuits. Work at UVa and the Jet Propulsion Laboratory succeeded in integrating this diode technology onto low dielectric substrates, thereby producing more practical components with greater yield and improved performance. However, the development of circuit integration technologies for greater than 1 THz and the development of broadly tunable sources of terahertz power remain as major research goals. Meeting these critical needs is the primary motivation for this research. To achieve this goal and demonstrate a useful prototype for one of our sponsors, this research project has focused on the development of a Sideband Generator at 1.6 THz. This component allows use of a fixed narrow band source as a tunable power source for terahertz spectroscopy and compact range radar. To prove the new fabrication and circuit technologies, initial devices were fabricated and tested at 200 and 600 GHz. These circuits included non-ohmic cathodes, air-bridged fingers, oxideless anode formation, and improved quartz integration processes. The excellent performance of these components validated these new concepts. The prototype process was then further optimized to

  7. Integrated Circuit-Based Biofabrication with Common Biomaterials for Probing Cellular Biomechanics.

    PubMed

    Sung, Chun-Yen; Yang, Chung-Yao; Yeh, J Andrew; Cheng, Chao-Min

    2016-02-01

    Recent advances in bioengineering have enabled the development of biomedical tools with modifiable surface features (small-scale architecture) to mimic extracellular matrices and aid in the development of well-controlled platforms that allow for the application of mechanical stimulation for studying cellular biomechanics. An overview of recent developments in common biomaterials that can be manufactured using integrated circuit-based biofabrication is presented. Integrated circuit-based biofabrication possesses advantages including mass and diverse production capacities for fabricating in vitro biomedical devices. This review highlights the use of common biomaterials that have been most frequently used to study cellular biomechanics. In addition, the influence of various small-scale characteristics on common biomaterial surfaces for a range of different cell types is discussed. PMID:26708959

  8. Synthetic circuits integrating logic and memory in living cells.

    PubMed

    Siuti, Piro; Yazbek, John; Lu, Timothy K

    2013-05-01

    Logic and memory are essential functions of circuits that generate complex, state-dependent responses. Here we describe a strategy for efficiently assembling synthetic genetic circuits that use recombinases to implement Boolean logic functions with stable DNA-encoded memory of events. Application of this strategy allowed us to create all 16 two-input Boolean logic functions in living Escherichia coli cells without requiring cascades comprising multiple logic gates. We demonstrate long-term maintenance of memory for at least 90 cell generations and the ability to interrogate the states of these synthetic devices with fluorescent reporters and PCR. Using this approach we created two-bit digital-to-analog converters, which should be useful in biotechnology applications for encoding multiple stable gene expression outputs using transient inputs of inducers. We envision that this integrated logic and memory system will enable the implementation of complex cellular state machines, behaviors and pathways for therapeutic, diagnostic and basic science applications. PMID:23396014

  9. Models for total dose degradation of linear integrated circuits

    SciTech Connect

    Johnston, A.H.; Plaag, R.E.

    1987-12-01

    Mechanisms for total dose degradation of linear circuits are discussed, including bulk effects, oxide charge buildup and recombination at the Si-SiO/sub 2/ interface. The dependence of damage on bias, dose, particle type and energy is used in conjunction with two-dimensional modeling to identify the failure mechanism in a specific linear device type. The importance of surface recombination is demonstrated along with the absence of bias dependence. Bulk damage is shown to be important for high energy electron irradiation because of wide-base pnp transistors. This causes substantial differences in device failure between electron and cobalt-60 environments that need to be taken into account for test standards and data bases that include commercial bipolar integrated circuits. Valid test methodologies for linear device must consider the energy and particle type present in the actual environment.

  10. Development of Integrated Single Flux Quantum - Superconducting Qubit Circuits

    NASA Astrophysics Data System (ADS)

    Leonard, Edward, Jr.; Thorbeck, Ted; Zhu, Shaojiang; Howington, Caleb; Hutchings, Matthew; Nelson, Jj; Plourde, Britton; McDermott, Robert

    Significant theoretical and experimental progress has been made in recent years towards a scalable superconducting quantum circuit architecture. Here we present a first attempt to integrate classical control elements from the single flux quantum (SFQ) digital logic family with a superconducting transom qubit on a single chip. The SFQ driving circuit is fabricated in a six-layer high-Jc Nb/Al-AlOx/Nb junction process while the transmon qubit is subsequently formed using submicron Al-AlOx-Al junctions grown by double-angle evaporation. We investigate sources of decoherence associated with the more complex fabrication process and describe first attempts to perform coherent qubit manipulations using resonant trains of SFQ pulses.

  11. Mnemonic Functions for Nonlinear Dendritic Integration in Hippocampal Pyramidal Circuits.

    PubMed

    Kaifosh, Patrick; Losonczy, Attila

    2016-05-01

    We present a model for neural circuit mechanisms underlying hippocampal memory. Central to this model are nonlinear interactions between anatomically and functionally segregated inputs onto dendrites of pyramidal cells in hippocampal areas CA3 and CA1. We study the consequences of such interactions using model neurons in which somatic burst-firing and synaptic plasticity are controlled by conjunctive processing of these separately integrated input pathways. We find that nonlinear dendritic input processing enhances the model's capacity to store and retrieve large numbers of similar memories. During memory encoding, CA3 stores heavily decorrelated engrams to prevent interference between similar memories, while CA1 pairs these engrams with information-rich memory representations that will later provide meaningful output signals during memory recall. While maintaining mathematical tractability, this model brings theoretical study of memory operations closer to the hippocampal circuit's anatomical and physiological properties, thus providing a framework for future experimental and theoretical study of hippocampal function. PMID:27146266

  12. Advances by the Integral Fast Reactor Program

    SciTech Connect

    Lineberry, M.J.; Pedersen, D.R.; Walters, L.C.; Cahalan, J.E.

    1991-01-01

    The advances by the Integral Fast Reactor Program at Argonne National Laboratory are the subject of this paper. The Integral Fast Reactor (IFR) is an advanced liquid-metal-cooled reactor concept being developed at Argonne National Laboratory. The advances stressed in the paper include fuel irradiation performance, improved passive safety, and the development of a prototype fuel cycle facility. 14 refs.

  13. Advanced integrated solvent extraction systems

    SciTech Connect

    Horwitz, E.P.; Dietz, M.L.; Leonard, R.A.

    1997-10-01

    Advanced integrated solvent extraction systems are a series of novel solvent extraction (SX) processes that will remove and recover all of the major radioisotopes from acidic-dissolved sludge or other acidic high-level wastes. The major focus of this effort during the last 2 years has been the development of a combined cesium-strontium extraction/recovery process, the Combined CSEX-SREX Process. The Combined CSEX-SREX Process relies on a mixture of a strontium-selective macrocyclic polyether and a novel cesium-selective extractant based on dibenzo 18-crown-6. The process offers several potential advantages over possible alternatives in a chemical processing scheme for high-level waste treatment. First, if the process is applied as the first step in chemical pretreatment, the radiation level for all subsequent processing steps (e.g., transuranic extraction/recovery, or TRUEX) will be significantly reduced. Thus, less costly shielding would be required. The second advantage of the Combined CSEX-SREX Process is that the recovered Cs-Sr fraction is non-transuranic, and therefore will decay to low-level waste after only a few hundred years. Finally, combining individual processes into a single process will reduce the amount of equipment required to pretreat the waste and therefore reduce the size and cost of the waste processing facility. In an ongoing collaboration with Lockheed Martin Idaho Technology Company (LMITCO), the authors have successfully tested various segments of the Advanced Integrated Solvent Extraction Systems. Eichrom Industries, Inc. (Darien, IL) synthesizes and markets the Sr extractant and can supply the Cs extractant on a limited basis. Plans are under way to perform a test of the Combined CSEX-SREX Process with real waste at LMITCO in the near future.

  14. An application of carbon nanotubes for integrated circuit interconnects

    NASA Astrophysics Data System (ADS)

    Coiffic, J. C.; Foa Torres, L. E.; Le Poche, H.; Fayolle, M.; Roche, S.; Maitrejean, S.; Roualdes, S.; Ayral, A.

    2008-08-01

    Integrated circuits fabrication is soon reaching strong limitations. Help could come from using carbon nanotubes as conducting wires for interconnects. Although this solution was proposed six years ago, researchers still come up with many obstacles such as localization, low temperature growth on copper, contacting and reproducibility. The integration processes exposed here intend to meet the industrial requirements. Two approaches are then possibly followed. Either using densely packed single wall (SWCNT) (or very tiny multiwall) nanotubes, or filling up the whole interconnect diameter with a single large multiwall (MWCNT) nanotube. In this work, we focus on the integration of multiwall vertical interconnects. Densely packed MWCNTs are grown in via holes by CVD. Alternatively, we have developed a method to obtain a single large nanofibre grown by PECVD (MWCNF) in each via hole. Electrical measurements are performed on CVD and PECVD grown carbon nanotubes. The role of electron-phonon interaction in these devices is also briefly discussed.

  15. Analog Integrated Circuit for Motion Detection with Simple-Shape Recognition Based on Frog Vision System

    NASA Astrophysics Data System (ADS)

    Nishio, Kimihiro; Yonezu, Hiroo; Furukawa, Yuzo

    2007-09-01

    We proposed in this research a novel two-dimensional network based on the frog visual system, with a motion detection function and a newly developed simple-shape recognition function, for use in object discrimination by integrated circuits. Specifically, the network mimics the signal processing of the small-field cell in a frog brain, consisting of the tectum and thalamus, which generates signals of the motion and simple shape of an object. The proposed network is constructed from simple analog complementary metal oxide semiconductor (CMOS) circuits; a test chip of the proposed network was fabricated with a 1.2 μm CMOS process. Measurements on the chip clarified that the proposed network can generate signals of the moving direction, velocity, and simple shape, as well as perform information processing of the small-field cell. Results with the simulation program with integrated circuit emphasis (SPICE) showed that the analog circuits used in the network have low power consumption. Applications of the proposed network are expected to realize advanced vision chips with functions such as object discrimination and target tracking.

  16. Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

    PubMed

    Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

    2016-01-01

    Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification. PMID:26798055

  17. Implantable neurotechnologies: a review of integrated circuit neural amplifiers

    PubMed Central

    Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V.

    2016-01-01

    Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification. PMID:26798055

  18. Fabrication Of High-Tc Superconducting Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Warner, Joseph D.

    1992-01-01

    Microwave ring resonator fabricated to demonstrate process for fabrication of passive integrated circuits containing high-transition-temperature superconductors. Superconductors increase efficiencies of communication systems, particularly microwave communication systems, by reducing ohmic losses and dispersion of signals. Used to reduce sizes and masses and increase aiming accuracies and tracking speeds of millimeter-wavelength, electronically steerable antennas. High-Tc superconductors preferable for such applications because they operate at higher temperatures than low-Tc superconductors do, therefore, refrigeration systems needed to maintain superconductivity designed smaller and lighter and to consume less power.

  19. State-transfer simulation in integrated waveguide circuits

    NASA Astrophysics Data System (ADS)

    Latmiral, L.; Di Franco, C.; Mennea, P. L.; Kim, M. S.

    2015-08-01

    Spin-chain models have been widely studied in terms of quantum information processes, for instance for the faithful transmission of quantum states. Here, we investigate the limitations of mapping this process to an equivalent one through a bosonic chain. In particular, we keep in mind experimental implementations, which the progress in integrated waveguide circuits could make possible in the very near future. We consider the feasibility of exploiting the higher dimensionality of the Hilbert space of the chain elements for the transmission of a larger amount of information, and the effects of unwanted excitations during the process. Finally, we exploit the information-flux method to provide bounds to the transfer fidelity.

  20. Implementation of Large Scale Integrated (LSI) circuit design software

    NASA Technical Reports Server (NTRS)

    Kuehlthau, R. L.; Pitts, E. R.

    1976-01-01

    Portions of the Computer Aided Design and Test system, a collection of Large Scale Integrated (LSI) circuit design programs were modified and upgraded. Major modifications were made to the Mask Analysis Program in the form of additional operating commands and file processing options. Modifications were also made to the Artwork Interactive Design System to correct some deficiencies in the original program as well as to add several new command features related to improving the response of AIDS when dealing with large files. The remaining work was concerned with updating various programs within CADAT to incorporate the silicon on sapphire silicon gate technology.

  1. Light-induced voltage alteration for integrated circuit analysis

    DOEpatents

    Cole, Jr., Edward I.; Soden, Jerry M.

    1995-01-01

    An apparatus and method are described for analyzing an integrated circuit (IC), The invention uses a focused light beam that is scanned over a surface of the IC to generate a light-induced voltage alteration (LIVA) signal for analysis of the IC, The LIVA signal may be used to generate an image of the IC showing the location of any defects in the IC; and it may be further used to image and control the logic states of the IC. The invention has uses for IC failure analysis, for the development of ICs, for production-line inspection of ICs, and for qualification of ICs.

  2. Light-induced voltage alteration for integrated circuit analysis

    DOEpatents

    Cole, E.I. Jr.; Soden, J.M.

    1995-07-04

    An apparatus and method are described for analyzing an integrated circuit (IC). The invention uses a focused light beam that is scanned over a surface of the IC to generate a light-induced voltage alteration (LIVA) signal for analysis of the IC. The LIVA signal may be used to generate an image of the IC showing the location of any defects in the IC; and it may be further used to image and control the logic states of the IC. The invention has uses for IC failure analysis, for the development of ICs, for production-line inspection of ICs, and for qualification of ICs. 18 figs.

  3. Method for deposition of a conductor in integrated circuits

    DOEpatents

    Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

    1997-09-02

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

  4. Method for deposition of a conductor in integrated circuits

    DOEpatents

    Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

    1997-01-01

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

  5. The use of hybrid integrated circuit techniques in biotelemetry applications

    NASA Technical Reports Server (NTRS)

    Fryer, T. B.

    1977-01-01

    A review is presented of some features of hybrid integrated circuits that make their use advantageous in miniature biotelemetry applications. The various techniques for fabricating resistors, capacitors and interconnections by both thin film and thick film technology are discussed. The use of chip capacitors, resistors, and especially standard IC chips on substrates with fired-on interconnection patterns is emphasized. The review is designed primarily to acquaint biotelemetry users and designers with an overview of this fabrication technique so that they can better communicate their needs with an understanding of its limitations and advantages to facilities specializing in hybrid construction.

  6. Universal nondestructive mm-wave integrated circuit test fixture

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R. (Inventor); Shalkhauser, Kurt A. (Inventor)

    1990-01-01

    Monolithic microwave integrated circuit (MMIC) test includes a bias module having spring-loaded contacts which electrically engage pads on a chip carrier disposed in a recess of a base member. RF energy is applied to and passed from the chip carrier by chamfered edges of ridges in the waveguide passages of housings which are removably attached to the base member. Thru, Delay, and Short calibration standards having dimensions identical to those of the chip carrier assure accuracy and reliability of the test. The MMIC chip fits in an opening in the chip carrier with the boundaries of the MMIC lying on movable reference planes thereby establishing accuracy and flexibility.

  7. Stainless Steel NaK Circuit Integration and Fill Submission

    NASA Technical Reports Server (NTRS)

    Garber, Anne E.

    2006-01-01

    The Early Flight Fission Test Facilities (EFF-TF) team has been tasked by the Marshall Space Flight Center Nuclear Systems Office to design, fabricate, and test an actively pumped alkali metal flow circuit. The system, which was originally designed to hold a eutectic mixture of sodium potassium (NaK), was redesigned to hold lithium; but due to a shift in focus, it is once again being prepared for use with NaK. Changes made to the actively pumped, high temperature loop include the replacement of the expansion reservoir, addition of remotely operated valves, and modification of the support table. Basic circuit components include: reactor segment, NaK to gas heat exchanger, electromagnetic (EM) liquid metal pump, load/drain reservoir, expansion reservoir, instrumentation, and a spill reservoir. A 37-pin partial-array core (pin and flow path dimensions are the same as those in a full design) was selected for fabrication and test. This document summarizes the integration and fill of the pumped liquid metal NaK flow circuit.

  8. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

    PubMed

    Nakazato, Kazuo

    2014-03-28

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor. PMID:24567475

  9. Advanced optical manufacturing digital integrated system

    NASA Astrophysics Data System (ADS)

    Tao, Yizheng; Li, Xinglan; Li, Wei; Tang, Dingyong

    2012-10-01

    It is necessarily to adapt development of advanced optical manufacturing technology with modern science technology development. To solved these problems which low of ration, ratio of finished product, repetition, consistent in big size and high precision in advanced optical component manufacturing. Applied business driven and method of Rational Unified Process, this paper has researched advanced optical manufacturing process flow, requirement of Advanced Optical Manufacturing integrated System, and put forward architecture and key technology of it. Designed Optical component core and Manufacturing process driven of Advanced Optical Manufacturing Digital Integrated System. the result displayed effective well, realized dynamic planning Manufacturing process, information integration improved ratio of production manufactory.

  10. SEM-contour shape analysis based on circuit structure for advanced systematic defect inspection

    NASA Astrophysics Data System (ADS)

    Toyoda, Yasutaka; Shindo, Hiroyuki; Hojo, Yutaka; Fuchimoto, Daisuke

    2014-04-01

    We have developed a practicable measurement technique that can help to achieve reliable inspections for systematic defects in advanced semiconductor devices. Systematic defects occurring in the design and mask processes are a dominant component of integrated circuit yield loss in nano-scaled technologies. Therefore, it is essential to ensure systematic defects are detected at an early stage of wafer fabrication. In the past, printed pattern shapes have been evaluated by human eyes or by taking manual critical dimension (CD) measurements. However, these operations are sometimes unstable and inaccurate. Last year, we proposed a new technique for taking measurements by using a SEM contour [1]. This technique enables a highly precise quantification of various complex 2D shaped patterns by comparing a contour extracted from a SEM image using a CD measurement algorithm and an ideal pattern. We improved this technique to enable the carrying out of inspections suitable for every pattern structure required for minimizing the process margin. This technique quantifies a pattern shape of a target-layer pattern using information on a multi-layered circuit structure. This enabled it to confirm the existence of a critical defect in a circuit connecting upper/lower-layers. This paper describes the improved technique and the evaluation results obtained in evaluating it in detail.

  11. Development of superconducting bonding for multilayer microwave integrated quantum circuits

    NASA Astrophysics Data System (ADS)

    Brecht, Teresa; Axline, Christopher; Chu, Yiwen; Pfaff, Wolfgang; Frunzio, Luigi; Devoret, Michel; Schoelkopf, Robert

    Future quantum computers are likely to take the shape of multilayer microwave integrated quantum circuits. The proposed physical architecture retains the superb coherence of 3D structures while achieving superior scalability and compatibility with planar circuitry and integrated readout electronics. This hardware platform utilizes known techniques of bulk etching in silicon wafers and requires metallic bonding of superconducting materials. Superconducting wafer bonding is a crucial tool in need of development. Whether micromachined in wafers or traditionally machined in bulk metal, 3D cavities typically posses a seam where two parts meet. Ideally, this seam consists of a perfect superconducting bond. Pursuing this goal, we have developed a new understanding of seams as a loss mechanism that is applicable to 3D cavities in general. We present quality factor measurements of both 3D cavities and 2D stripline resonators to study the losses of superconducting bonds.

  12. Mixed signal custom integrated circuit development for physics instrumentation

    SciTech Connect

    Britton, C.L. Jr.; Bryan, W.L.; Emery, M.S.

    1998-10-01

    The Monolithic Systems Development Group at the Oak Ridge National Laboratory has been greatly involved in custom mixed-mode integrated circuit development for the PHENIX detector at the Relativistic Heavy Ion collider (RHIC) at Brookhaven National Laboratory and position-sensitive germanium spectrometer front-ends for the Naval Research Laboratory (NRL). This paper will outline the work done for both PHENIX and the Naval Research Laboratory in the area of full-custom, mixed-signal CMOS integrated electronics. This paper presents the architectures chosen for the various PHENIX detectors which include position-sensitive silicon, capacitive pixel, and phototube detectors, and performance results for the subsystems as well as a system description of the NRL germanium strip system and its performance. The performance of the custom preamplifiers, discriminators, analog memories, analog-digital converters, and control circuitry for all systems will be presented.

  13. Development of optical packet and circuit integrated ring network testbed.

    PubMed

    Furukawa, Hideaki; Harai, Hiroaki; Miyazawa, Takaya; Shinada, Satoshi; Kawasaki, Wataru; Wada, Naoya

    2011-12-12

    We developed novel integrated optical packet and circuit switch-node equipment. Compared with our previous equipment, a polarization-independent 4 × 4 semiconductor optical amplifier switch subsystem, gain-controlled optical amplifiers, and one 100 Gbps optical packet transponder and seven 10 Gbps optical path transponders with 10 Gigabit Ethernet (10GbE) client-interfaces were newly installed in the present system. The switch and amplifiers can provide more stable operation without equipment adjustments for the frequent polarization-rotations and dynamic packet-rate changes of optical packets. We constructed an optical packet and circuit integrated ring network testbed consisting of two switch nodes for accelerating network development, and we demonstrated 66 km fiber transmission and switching operation of multiplexed 14-wavelength 10 Gbps optical paths and 100 Gbps optical packets encapsulating 10GbE frames. Error-free (frame error rate < 1×10(-4)) operation was achieved with optical packets of various packet lengths and packet rates, and stable operation of the network testbed was confirmed. In addition, 4K uncompressed video streaming over OPS links was successfully demonstrated. PMID:22274025

  14. Integrated circuits based on bilayer MoS₂ transistors.

    PubMed

    Wang, Han; Yu, Lili; Lee, Yi-Hsien; Shi, Yumeng; Hsu, Allen; Chin, Matthew L; Li, Lain-Jong; Dubey, Madan; Kong, Jing; Palacios, Tomas

    2012-09-12

    Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS(2) to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS(2). Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. PMID:22862813

  15. Flexible high-performance carbon nanotube integrated circuits.

    PubMed

    Sun, Dong-ming; Timmermans, Marina Y; Tian, Ying; Nasibulin, Albert G; Kauppinen, Esko I; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka

    2011-03-01

    Carbon nanotube thin-film transistors are expected to enable the fabrication of high-performance, flexible and transparent devices using relatively simple techniques. However, as-grown nanotube networks usually contain both metallic and semiconducting nanotubes, which leads to a trade-off between charge-carrier mobility (which increases with greater metallic tube content) and on/off ratio (which decreases). Many approaches to separating metallic nanotubes from semiconducting nanotubes have been investigated, but most lead to contamination and shortening of the nanotubes, thus reducing performance. Here, we report the fabrication of high-performance thin-film transistors and integrated circuits on flexible and transparent substrates using floating-catalyst chemical vapour deposition followed by a simple gas-phase filtration and transfer process. The resulting nanotube network has a well-controlled density and a unique morphology, consisting of long (~10 µm) nanotubes connected by low-resistance Y-shaped junctions. The transistors simultaneously demonstrate a mobility of 35 cm(2) V(-1) s(-1) and an on/off ratio of 6 × 10(6). We also demonstrate flexible integrated circuits, including a 21-stage ring oscillator and master-slave delay flip-flops that are capable of sequential logic. Our fabrication procedure should prove to be scalable, for example, by using high-throughput printing techniques. PMID:21297625

  16. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    PubMed Central

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

  17. Control technology for integrated circuit fabrication at Micro-Circuit Engineering, Incorporated, West Palm Beach, Florida

    NASA Astrophysics Data System (ADS)

    Mihlan, G. I.; Mitchell, R. I.; Smith, R. K.

    1984-07-01

    A survey to assess control technology for integrated circuit fabrication was conducted. Engineering controls included local and general exhaust ventilation, shielding, and personal protective equipment. Devices or work stations that contained toxic materials that were potentially dangerous were controlled by local exhaust ventilation. Less hazardous areas were controlled by general exhaust ventilation. Process isolation was used in the plasma etching, low pressure chemical vapor deposition, and metallization operations. Shielding was used in ion implantation units to control X-ray emissions, in contact mask alignes to limit ultraviolet (UV) emissions, and in plasma etching units to control radiofrequency and UV emissions. Most operations were automated. Use of personal protective equipment varied by job function.

  18. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    NASA Astrophysics Data System (ADS)

    Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  19. Integrated Genomic and Gene Expression Profiling Identifies Two Major Genomic Circuits in Urothelial Carcinoma

    PubMed Central

    Lindgren, David; Sjödahl, Gottfrid; Lauss, Martin; Staaf, Johan; Chebil, Gunilla; Lövgren, Kristina; Gudjonsson, Sigurdur; Liedberg, Fredrik; Patschan, Oliver; Månsson, Wiking; Fernö, Mårten; Höglund, Mattias

    2012-01-01

    Similar to other malignancies, urothelial carcinoma (UC) is characterized by specific recurrent chromosomal aberrations and gene mutations. However, the interconnection between specific genomic alterations, and how patterns of chromosomal alterations adhere to different molecular subgroups of UC, is less clear. We applied tiling resolution array CGH to 146 cases of UC and identified a number of regions harboring recurrent focal genomic amplifications and deletions. Several potential oncogenes were included in the amplified regions, including known oncogenes like E2F3, CCND1, and CCNE1, as well as new candidate genes, such as SETDB1 (1q21), and BCL2L1 (20q11). We next combined genome profiling with global gene expression, gene mutation, and protein expression data and identified two major genomic circuits operating in urothelial carcinoma. The first circuit was characterized by FGFR3 alterations, overexpression of CCND1, and 9q and CDKN2A deletions. The second circuit was defined by E3F3 amplifications and RB1 deletions, as well as gains of 5p, deletions at PTEN and 2q36, 16q, 20q, and elevated CDKN2A levels. TP53/MDM2 alterations were common for advanced tumors within the two circuits. Our data also suggest a possible RAS/RAF circuit. The tumors with worst prognosis showed a gene expression profile that indicated a keratinized phenotype. Taken together, our integrative approach revealed at least two separate networks of genomic alterations linked to the molecular diversity seen in UC, and that these circuits may reflect distinct pathways of tumor development. PMID:22685613

  20. Digital pixel readout integrated circuit architectures for LWIR

    NASA Astrophysics Data System (ADS)

    Shafique, Atia; Yazici, Melik; Kayahan, Huseyin; Ceylan, Omer; Gurbuz, Yasar

    2015-06-01

    This paper presents and discusses digital pixel readout integrated circuit architectures for long wavelength infrared (LWIR) in CMOS technology. Presented architectures are designed for scanning and staring arrays type detectors respectively. For scanning arrays, digital time delay integration (TDI) is implemented on 8 pixels with sampling rate up to 3 using CMOS 180nm technology. Input referred noise of ROIC is below 750 rms electron meanwhile power dissipation is appreciably under 30mW. ROIC design is optimized to perform at room as well as cryogenic temperatures. For staring type arrays, a digital pixel architecture relying on coarse quantization with pulse frequency modulation (PFM) and novel approach of extended integration is presented. It can achieve extreme charge handling capacity of 2.04Ge- with 20 bit output resolution and power dissipation below 350 nW in CMOS 90nm technology. Efficient mechanism of measuring the time to estimate the remaining charge on integration capacitor in order to achieve low SNR has employed.

  1. Investigation of failure mechanisms in integrated vacuum circuits

    NASA Technical Reports Server (NTRS)

    Rosengreen, A.

    1972-01-01

    The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.

  2. Minimizing the area required for time constants in integrated circuits

    NASA Technical Reports Server (NTRS)

    Lyons, J. C.

    1972-01-01

    When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

  3. Basic structures of integrated photonic circuits for smart biosensor applications

    NASA Astrophysics Data System (ADS)

    Germer, S.; Cherkouk, C.; Rebohle, L.; Helm, M.; Skorupa, W.

    2013-05-01

    The breadth of opportunities for applied technologies for optical sensors ranges from environmental and biochemical control, medical diagnostics to process regulation. Thus the specified usage of the optical sensor system requires a particular design and functionalization. Especially biochemical sensors incorporate electronic and photonic devices for the detection of harmful substances e.g. in drinking water. Here we present recent developments in the integration of a Si-based light emitting device (LED) [1-3, 8] into a photonic circuit for an optical waveguide-based biodetection system. This concept includes the design, fabrication and characterization of the dielectric high contrast waveguide as an important component, beside the LED, in the photonic system circuit. First approaches involve simulations of Si3N4/SiO2-waveguides with the finite element method (FEM) and their fabrication by plasma enhanced chemical vapour deposition (PECVD), optical lithography and reactive ion etching (RIE). In addition, we characterized the deposited layers via ellipsometry and the etched structures by scanning electron microscopy (SEM). The obtained results establish a basis for optimized Si-based LED waveguide butt-coupling with adequate coupling efficiency, low attenuation loss and a high optical power throughput.

  4. Integrated circuit for processing a low-frequency signal from a seismic detector

    SciTech Connect

    Malashevich, N. I.; Roslyakov, A. S.; Polomoshnov, S. A. Fedorov, R. A.

    2011-12-15

    Specific features for the detection and processing of a low-frequency signal from a seismic detector are considered in terms of an integrated circuit based on a large matrix crystal of the 5507 series. This integrated circuit is designed for the detection of human movements. The specific features of the information signal, obtained at the output of the seismic detector, and the main characteristics of the integrated circuit and its structure are reported.

  5. Wireless Neural Recording With Single Low-Power Integrated Circuit

    PubMed Central

    Harrison, Reid R.; Kier, Ryan J.; Chestek, Cynthia A.; Gilja, Vikash; Nuyujukian, Paul; Ryu, Stephen; Greger, Bradley; Solzbacher, Florian; Shenoy, Krishna V.

    2010-01-01

    We present benchtop and in vivo experimental results from an integrated circuit designed for wireless implantable neural recording applications. The chip, which was fabricated in a commercially available 0.6-μm 2P3M BiCMOS process, contains 100 amplifiers, a 10-bit analog-to-digital converter (ADC), 100 threshold-based spike detectors, and a 902–928 MHz frequency-shift-keying (FSK) transmitter. Neural signals from a selected amplifier are sampled by the ADC at 15.7 kSps and telemetered over the FSK wireless data link. Power, clock, and command signals are sent to the chip wirelessly over a 2.765-MHz inductive (coil-to-coil) link. The chip is capable of operating with only two off-chip components: a power/command receiving coil and a 100-nF capacitor. PMID:19497825

  6. Plasmonic nanopatch array for optical integrated circuit applications.

    PubMed

    Qu, Shi-Wei; Nie, Zai-Ping

    2013-01-01

    Future plasmonic integrated circuits with the capability of extremely high-speed data processing at optical frequencies will be dominated by the efficient optical emission (excitation) from (of) plasmonic waveguides. Towards this goal, plasmonic nanoantennas, currently a hot topic in the field of plasmonics, have potential to bridge the mismatch between the wave vector of free-space photonics and that of the guided plasmonics. To manipulate light at will, plasmonic nanoantenna arrays will definitely be more efficient than isolated nanoantennas. In this article, the concepts of microwave antenna arrays are applied to efficiently convert plasmonic waves in the plasmonic waveguides into free-space optical waves or vice versa. The proposed plasmonic nanoantenna array, with nanopatch antennas and a coupled wedge plasmon waveguide, can also act as an efficient spectrometer to project different wavelengths into different directions, or as a spatial filter to absorb a specific wavelength at a specified incident angle. PMID:24201454

  7. Uncertain behaviours of integrated circuits improve computational performance.

    PubMed

    Yoshimura, Chihiro; Yamaoka, Masanao; Hayashi, Masato; Okuyama, Takuya; Aoki, Hidetaka; Kawarabayashi, Ken-ichi; Mizuno, Hiroyuki

    2015-01-01

    Improvements to the performance of conventional computers have mainly been achieved through semiconductor scaling; however, scaling is reaching its limitations. Natural phenomena, such as quantum superposition and stochastic resonance, have been introduced into new computing paradigms to improve performance beyond these limitations. Here, we explain that the uncertain behaviours of devices due to semiconductor scaling can improve the performance of computers. We prototyped an integrated circuit by performing a ground-state search of the Ising model. The bit errors of memory cell devices holding the current state of search occur probabilistically by inserting fluctuations into dynamic device characteristics, which will be actualised in the future to the chip. As a result, we observed more improvements in solution accuracy than that without fluctuations. Although the uncertain behaviours of devices had been intended to be eliminated in conventional devices, we demonstrate that uncertain behaviours has become the key to improving computational performance. PMID:26586362

  8. Apparatus and method for defect testing of integrated circuits

    DOEpatents

    Cole, Jr., Edward I.; Soden, Jerry M.

    2000-01-01

    An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V.sub.DD, to an IC under test and measures a transient voltage component, V.sub.DDT, signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V.sub.DDT signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V.sub.DDT signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.

  9. Apparatus and method for defect testing of integrated circuits

    SciTech Connect

    Cole, E.I. Jr.; Soden, J.M.

    2000-02-29

    An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V(DD), to an IC under test and measures a transient voltage component, V(DDT), signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V(DDT) signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V(DDT) signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.

  10. Uncertain behaviours of integrated circuits improve computational performance

    PubMed Central

    Yoshimura, Chihiro; Yamaoka, Masanao; Hayashi, Masato; Okuyama, Takuya; Aoki, Hidetaka; Kawarabayashi, Ken-ichi; Mizuno, Hiroyuki

    2015-01-01

    Improvements to the performance of conventional computers have mainly been achieved through semiconductor scaling; however, scaling is reaching its limitations. Natural phenomena, such as quantum superposition and stochastic resonance, have been introduced into new computing paradigms to improve performance beyond these limitations. Here, we explain that the uncertain behaviours of devices due to semiconductor scaling can improve the performance of computers. We prototyped an integrated circuit by performing a ground-state search of the Ising model. The bit errors of memory cell devices holding the current state of search occur probabilistically by inserting fluctuations into dynamic device characteristics, which will be actualised in the future to the chip. As a result, we observed more improvements in solution accuracy than that without fluctuations. Although the uncertain behaviours of devices had been intended to be eliminated in conventional devices, we demonstrate that uncertain behaviours has become the key to improving computational performance. PMID:26586362

  11. Infrared transparent graphene heater for silicon photonic integrated circuits.

    PubMed

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed. PMID:27137229

  12. Design and testing of integrated circuits for reactor protection channels

    SciTech Connect

    Battle, R.E.; Vandermolen, R.I.; Jagadish, U.; Swail, B.K.; Naser, J.; Rana, I.

    1995-06-01

    Custom and semicustom application-specific integrated circuit design and testing methods are investigated for use in research and commercial nuclear reactor safety systems. The Electric Power Research Institute and Oak Ridge National Laboratory are working together through a cooperative research and development agreement to apply modern technology to a nuclear reactor protection system. Purpose of this project is to demonstrate to the nuclear industry an alternative approach for new or upgrade reactor protection and safety system signal processing and voting logic. Motivation for this project stems from (1) the difficulty of proving that software-based protection systems are adequately reliable, (2) the obsolescence of the original equipment, and (3) the improved performance of digital processing.

  13. Plasmonic nanopatch array for optical integrated circuit applications

    PubMed Central

    Qu, Shi-Wei; Nie, Zai-Ping

    2013-01-01

    Future plasmonic integrated circuits with the capability of extremely high-speed data processing at optical frequencies will be dominated by the efficient optical emission (excitation) from (of) plasmonic waveguides. Towards this goal, plasmonic nanoantennas, currently a hot topic in the field of plasmonics, have potential to bridge the mismatch between the wave vector of free-space photonics and that of the guided plasmonics. To manipulate light at will, plasmonic nanoantenna arrays will definitely be more efficient than isolated nanoantennas. In this article, the concepts of microwave antenna arrays are applied to efficiently convert plasmonic waves in the plasmonic waveguides into free-space optical waves or vice versa. The proposed plasmonic nanoantenna array, with nanopatch antennas and a coupled wedge plasmon waveguide, can also act as an efficient spectrometer to project different wavelengths into different directions, or as a spatial filter to absorb a specific wavelength at a specified incident angle. PMID:24201454

  14. Monolithic microwave integrated circuit devices for active array antennas

    NASA Technical Reports Server (NTRS)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  15. Development of a plan for automating integrated circuit processing

    NASA Technical Reports Server (NTRS)

    1971-01-01

    The operations analysis and equipment evaluations pertinent to the design of an automated production facility capable of manufacturing beam-lead CMOS integrated circuits are reported. The overall plan shows approximate cost of major equipment, production rate and performance capability, flexibility, and special maintenance requirements. Direct computer control is compared with supervisory-mode operations. The plan is limited to wafer processing operations from the starting wafer to the finished beam-lead die after separation etching. The work already accomplished in implementing various automation schemes, and the type of equipment which can be found for instant automation are described. The plan is general, so that small shops or large production units can perhaps benefit. Examples of major types of automated processing machines are shown to illustrate the general concepts of automated wafer processing.

  16. In-plant testing of a novel coal cleaning circuit using advanced technologies, Quarterly report, March 1 - May 31, 1996

    SciTech Connect

    Honaker, R.Q.; Reed, S.; Mohanty, M.K.

    1996-12-31

    Research conducted at Southern Illinois University at Carbondale over the past two years has identified highly efficient methods for treating fine coal (i.e., -28 mesh). In this study, a circuit comprised of the three advanced fine coal cleaning technologies is being tested in an operating preparation plant to evaluate circuit performance and to compare the performance with the current technologies used to treat -16 mesh fine coal. The circuit integrated a Floatex hydrosizer, a Falcon concentrator and a Jameson froth flotation cell. The Floatex hydrosizer is being used as a primary cleaner for the nominally -16 mesh Illinois No. 5 fine coal circuit feed. The overflow of the Floatex is screened at 48 mesh using a Sizetec vibratory screen to produce a clean coal product from the screen overflow. The screen overflow is further treated by the Falcon and Jameson Cell. During this reporting period, tests were initiated on the fine coal circuit installed at the Kerr-McGee Galatia preparation plant. The circuit was found to reduce both the ash content and the pyritic sulfur content. Additional in-plant circuitry tests are ongoing.

  17. A kind of integrated method discuss of fOG signal processing circuit

    NASA Astrophysics Data System (ADS)

    Lu, Jun; Pan, Xin; Ying, Jiaju; Liu, Jie

    2014-12-01

    In view of the circuit miniaturization need in project application of fiber optic gyroscope(FOG), a new integrated technical scheme adopting system in package(SIP) for signal processing circuit of FOG was put forward. At first, the principle on signal processing circuit of FOG was analyzed, and the technical scheme adopting SIP based on low-temperature co-fired substrate technology was presented according to circuit characteristic and actual condition. Secondly, under the prerequisite of the concept introduction of SIP and LTCC, the SIP prototype of signal processing circuit of FOG was trialed produced,and it passed through the debug test. This SIP modular is an overall circuit complete integrated the signal processing circuit of FOG, and only a potentiometer and EPROM do not case outside. The testing results indicate that SIP is a kind of feasible scheme that carries out miniaturization for signal processing circuit of FOG.

  18. Advances in Closed Circuit TV Systems for the Partially Sighted.

    ERIC Educational Resources Information Center

    Genensky, S. M.; And Others

    The Rand Corporation has been doing research on closed-circuit television systems to aid the partially sighted since 1966. The current experimental system enhances the image electronically to provide a magnified image that is brighter and has greater contrast than the object being observed. The system also incorporates an easily movable platform…

  19. Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

    NASA Technical Reports Server (NTRS)

    Johnston, Allan H.; Rax, Bernard G.

    2006-01-01

    This paper discusses mechanisms and circuit-related factors that affect the degradation of linear integrated circuits from radiation in space. For some circuits there is sufficient degradation to affect performance at total dose levels below 4 krad(Si) because the circuit design techniques require higher gain for the pnp transistors that are the most sensitive to radiation. Qualification methods are recommended that include displacement damage as well as ionization damage.

  20. Photonic integrated circuits based on novel glass waveguides and devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yaping; Zhang, Deng; Pan, Weijian; Rowe, Helen; Benson, Trevor; Loni, Armando; Sewell, Phillip; Furniss, David; Seddon, Angela B.

    2006-04-01

    Novel materials, micro-, nano-scale photonic devices, and 'photonic systems on a chip' have become important focuses for global photonics research and development. This interest is driven by the rapidly growing demand for broader bandwidth in optical communication networks, and higher connection density in the interconnection area, as well as a wider range of application areas in, for example, health care, environment monitoring and security. Taken together, chalcogenide, heavy metal fluoride and fluorotellurite glasses offer transmission from ultraviolet to mid-infrared, high optical non-linearity and the ability to include active dopants, offering the potential for developing optical components with a wide range of functionality. Moreover, using single-mode large cross-section glass-based waveguides as an optical integration platform is an elegant solution for the monolithic integration of optical components, in which the glass-based structures act both as waveguides and as an optical bench for integration. We have previously developed a array of techniques for making photonic integrated circuits and devices based on novel glasses. One is fibre-on-glass (FOG), in which the fibres can be doped with different active dopants and pressed onto a glass substrate with a different composition using low-temperature thermal bonding under mechanical compression. Another is hot-embossing, in which a silicon mould is placed on top of a glass sample, and hot-embossing is carried out by applying heat and pressure. In this paper the development of a fabrication technique that combines the FOG and hot-embossing procedures to good advantage is described. Simulation and experimental results are presented.

  1. Methods of fabricating applique circuits

    DOEpatents

    Dimos, Duane B.; Garino, Terry J.

    1999-09-14

    Applique circuits suitable for advanced packaging applications are introduced. These structures are particularly suited for the simple integration of large amounts (many nanoFarads) of capacitance into conventional integrated circuit and multichip packaging technology. In operation, applique circuits are bonded to the integrated circuit or other appropriate structure at the point where the capacitance is required, thereby minimizing the effects of parasitic coupling. An immediate application is to problems of noise reduction and control in modern high-frequency circuitry.

  2. Fabrication of Planar Gradiometers by Using Superconducting Integrated Circuit Technology

    NASA Astrophysics Data System (ADS)

    Maezawa, Masaaki; Ying, Liliang; Gorwadkar, Sucheta; Zhang, Guofeng; Wang, Hai; Kong, Xiangyan; Wang, Zhen; Xie, Xiaoming

    We present fabrication technology for planar-type superconducting quantum interference devices (SQUIDs) comprising trilayer Nb/AlOx/Nb Josephson junctions and thin-film pick-up coils integrated on a single chip. A well-established superconducting integrated circuit technology that was originally developed for digital applications has been modified for developing SQUID fabrication processes with high reliability and controllability. Combination of two photolithography techniques, a high-resolution stepper and a large-shot-area mask aligner, has been introduced to fabricate fine-scale patterns such as 2-μm-square junctions and large-scale patterns such as 10-mm-square pick-up coils with a 2.5- or 3.0-cm baseline on the same chip. We successfully fabricated planar gradiometers and confirmed the operation with typical modulation amplitude of 50 μV, achieving gradient field resolutions as small as 3.5 fT/Hz1/2cm.

  3. Intelligent switches of integrated lightwave circuits with core telecommunication functions

    NASA Astrophysics Data System (ADS)

    Izhaky, Nahum; Duer, Reuven; Berns, Neil; Tal, Eran; Vinikman, Shirly; Schoenwald, Jeffrey S.; Shani, Yosi

    2001-05-01

    We present a brief overview of a promising switching technology based on Silica on Silicon thermo-optic integrated circuits. This is basically a 2D solid-state optical device capable of non-blocking switching operation. Except of its excellent performance (insertion loss<5dB, switching time<2ms...), the switch enables additional important build-in functionalities. It enables single-to- single channel switching and single-to-multiple channel multicasting/broadcasting. In addition, it has the capability of channel weighting and variable output power control (attenuation), for instance, to equalize signal levels and compensate for unbalanced different optical input powers, or to equalize unbalanced EDFA gain curve. We examine the market segments appropriate for the switch size and technology, followed by a discussion of the basic features of the technology. The discussion is focused on important requirements from the switch and the technology (e.g., insertion loss, power consumption, channel isolation, extinction ratio, switching time, and heat dissipation). The mechanical design is also considered. It must take into account integration of optical fiber, optical planar wafer, analog electronics and digital microprocessor controls, embedded software, and heating power dissipation. The Lynx Photon.8x8 switch is compared to competing technologies, in terms of typical market performance requirements.

  4. Automatic visual inspection of integrated circuits using an SEM

    SciTech Connect

    Kayaalp, A.E.

    1988-01-01

    The author investigates the complex problem of designing an integrated-circuit inspection system that will be used in controlling an automated semiconductor manufacturing facility. To satisfy the accuracy requirements, he proposes a system that integrates information supplied by multiple intelligent (virtual) sensors. Most of his work concentrated on the design of two scanning-electron-microscope (SEM)-based, intelligent sensors. One of them extracts 3D IC surface-topography information using computer stereo-vision techniques, and the other identifies shape defects in IC patterns using the IC design file as the reference. Both of these problems are viewed as constrained contour-matching problems. In stereo matching, feature contours extracted from the left and right stereo images are matched, where in pattern-shape inspection, pattern boundary contours extracted from the image and the IC design file are matched. An optimization technique is presented for solving the matching problem that results in both cases. This general approach simplifies the task of transforming the specifications of a physical problem into a computational form and results in a modular system.

  5. SDN architecture for optical packet and circuit integrated networks

    NASA Astrophysics Data System (ADS)

    Furukawa, Hideaki; Miyazawa, Takaya

    2016-02-01

    We have been developing an optical packet and circuit integrated (OPCI) network, which realizes dynamic optical path, high-density packet multiplexing, and flexible wavelength resource allocation. In the OPCI networks, a best-effort service and a QoS-guaranteed service are provided by employing optical packet switching (OPS) and optical circuit switching (OCS) respectively, and users can select these services. Different wavelength resources are assigned for OPS and OCS links, and the amount of their wavelength resources are dynamically changed in accordance with the service usage conditions. To apply OPCI networks into wide-area (core/metro) networks, we have developed an OPCI node with a distributed control mechanism. Moreover, our OPCI node works with a centralized control mechanism as well as a distributed one. It is therefore possible to realize SDN-based OPCI networks, where resource requests and a centralized configuration are carried out. In this paper, we show our SDN architecture for an OPS system that configures mapping tables between IP addresses and optical packet addresses and switching tables according to the requests from multiple users via a web interface. While OpenFlow-based centralized control protocol is coming into widespread use especially for single-administrative, small-area (LAN/data-center) networks. Here, we also show an interworking mechanism between OpenFlow-based networks (OFNs) and the OPCI network for constructing a wide-area network, and a control method of wavelength resource selection to automatically transfer diversified flows from OFNs to the OPCI network.

  6. Qualification needs for advanced integrated aircraft

    NASA Technical Reports Server (NTRS)

    Mackall, D. A.

    1985-01-01

    In an effort to achieve maximum aircraft performance, designers are integrating aircraft systems. The characteristics of aerodynamics, vehicle structure, and propulsion systems are being integrated and controlled through embedded, often flight critical, electronic systems. The qualification needs for such highly integrated aircraft systems are addressed. Based on flight experience with research aircraft, a set of test capabilities is described which allows for complete and efficient qualification of advanced integrated aircraft.

  7. New readout integrated circuit using continuous time fixed pattern noise correction

    NASA Astrophysics Data System (ADS)

    Dupont, Bertrand; Chammings, G.; Rapellin, G.; Mandier, C.; Tchagaspanian, M.; Dupont, Benoit; Peizerat, A.; Yon, J. J.

    2008-04-01

    LETI has been involved in IRFPA development since 1978; the design department (LETI/DCIS) has focused its work on new ROIC architecture since many years. The trend is to integrate advanced functions into the CMOS design to achieve cost efficient sensors production. Thermal imaging market is today more and more demanding of systems with instant ON capability and low power consumption. The purpose of this paper is to present the latest developments of fixed pattern noise continuous time correction. Several architectures are proposed, some are based on hardwired digital processing and some are purely analog. Both are using scene based algorithms. Moreover a new method is proposed for simultaneous correction of pixel offsets and sensitivities. In this scope, a new architecture of readout integrated circuit has been implemented; this architecture is developed with 0.18μm CMOS technology. The specification and the application of the ROIC are discussed in details.

  8. 75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-23

    ..., based on a complaint filed by Panasonic Corporation (``Panasonic'') of Japan. 75 FR 24742-43. The... COMMISSION In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products... importation of certain large scale integrated circuit semiconductor chips and products containing same...

  9. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-05

    ... COMMISSION In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products... semiconductor chips and products containing same by reason of infringement of certain claims of U.S. Patent Nos... certain large scale integrated circuit semiconductor chips or products containing the same that...

  10. 78 FR 16533 - Certain Integrated Circuit Devices and Products Containing the Same; Institution of Investigation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-15

    ... COMMISSION Certain Integrated Circuit Devices and Products Containing the Same; Institution of Investigation... importation, or the sale within the United States after importation of certain integrated circuit devices and... sale for importation, and/or the sale within the United States after importation of certain...

  11. 77 FR 39510 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-03

    ... COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not... the sale within the United States after importation of certain semiconductor integrated circuit... FR 25747-48 (May 1, 2012). The complaint alleges violations of section 337 of the Tariff Act of...

  12. High-speed coherent silicon modulator module using photonic integrated circuits: from circuit design to packaged module

    NASA Astrophysics Data System (ADS)

    Bernabé, S.; Olivier, S.; Myko, A.; Fournier, M.; Blampey, B.; Abraham, A.; Menezo, S.; Hauden, J.; Mottet, A.; Frigui, K.; Ngoho, S.; Frigui, B.; Bila, S.; Marris-Morini, D.; Pérez-Galacho, D.; Brindel, P.; Charlet, G.

    2016-05-01

    Silicon photonics technology is an enabler for the integration of complex circuits on a single chip, for various optical link applications such as routing, optical networks on chip, short range links and long haul transmitters. Quadrature Phase Shift Keying (QPSK) transmitters is one of the typical circuits that can be achieved using silicon photonics integrated circuits. The achievement of 25GBd QPSK transmitter modules requires several building blocks to be optimized: the pn junction used to build a BPSK (Binary Shift Phase Keying) modulator, the RF access and the optical interconnect at the package level. In this paper, we describe the various design steps of a BPSK module and the related tests that are needed at every stage of the fabrication process.

  13. Design structure for in-system redundant array repair in integrated circuits

    SciTech Connect

    Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Quellette, Michael R.; Strissel, Scott A.

    2008-11-25

    A design structure for repairing an integrated circuit during operation of the integrated circuit. The integrated circuit comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The design structure provides the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The design structure further passes the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

  14. PETRIC - A positron emission tomography readout integrated circuit

    SciTech Connect

    Pedrali-Noy, Marzio; Gruber, Gregory; Krieger, Bradley; Mandelli, Emmanuele; Meddeler, Gerrit; Moses, William; Rosso, Valeria

    2000-11-05

    We present architecture, critical design issues and performance measurements of PETRIC, a 64-channel mixed signal front-end integrated circuit (IC) for reading out a photodiode (PD) array coupled with LSO scintillator crystals for a medical imaging application (PET). Each channel consists of a low noise charge sensitive pre-amplifier (CSA), an RC-CR pulse shaper and a winner-take-all (WTA) multiplexer that selects the channel with the largest input signal. Triggered by an external timing signal, a switch opens and a capacitor stores the peak voltage of the winner channel. The shaper rise and fall times are adjustable by means of external current inputs over a continuous range of 0.7 (mu)s to 9 (mu)s. Power consumption is 5.4 mW per channel, measured Equivalent Noise Charge (ENC) at 1 (mu)s peaking time. Zero leakage current is 33 rms electrons plus 7.3 rms electrons per pF of input capacitance. Design is fabricated in 0.5 (mu)m 3.3V CMOS technology.

  15. Modularized construction of general integrated circuits on individual carbon nanotubes.

    PubMed

    Pei, Tian; Zhang, Panpan; Zhang, Zhiyong; Qiu, Chenguang; Liang, Shibo; Yang, Yingjun; Wang, Sheng; Peng, Lian-Mao

    2014-06-11

    While constructing general integrated circuits (ICs) with field-effect transistors (FETs) built on individual CNTs is among few viable ways to build ICs with small dimension and high performance that can be compared with that of state-of-the-art Si based ICs, this has not been demonstrated owing to the absence of valid and well-tolerant fabrication method. Here we demonstrate a modularized method for constructing general ICs on individual CNTs with different electric properties. A pass-transistor-logic style 8-transistor (8-T) unit is built, demonstrated as a multifunctional function generator with good tolerance to inhomogeneity in the CNTs used and used as a building block for constructing general ICs. As an example, an 8-bits BUS system that is widely used to transfer data between different systems in a computer is constructed. This is the most complicated IC fabricated on individual CNTs to date, containing 46 FETs built on six individual semiconducting CNTs. The 8-T unit provides a good basis for constructing complex ICs to explore the potential and limits of CNT ICs given the current imperfection in available CNT materials and may also be developed into a universal and efficient way for constructing general ICs on ideal CNT materials in the future. PMID:24796796

  16. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    PubMed Central

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  17. Microcoil Spring Interconnects for Ceramic Grid Array Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Strickland, S. M.; Hester, J. D.; Gowan, A. K.; Montgomery, R. K.; Geist, D. L.; Blanche, J. F.; McGuire, G. D.; Nash, T. S.

    2011-01-01

    As integrated circuit miniaturization trends continue, they drive the need for smaller higher input/output (I/O) packages. Hermetically sealed ceramic area array parts are the package of choice by the space community for high reliability space flight electronic hardware. Unfortunately, the coefficient of thermal expansion mismatch between the ceramic area array package and the epoxy glass printed wiring board limits the life of the interconnecting solder joint. This work presents the results of an investigation by Marshall Space Flight Center into a method to increase the life of this second level interconnection by the use of compliant microcoil springs. The design of the spring and its attachment process are presented along with thermal cycling results of microcoil springs (MCS) compared with state-of-the-art ball and column interconnections. Vibration testing has been conducted on MCS and high lead column parts. Radio frequency simulation and measurements have been made and the MCS has been modeled and a stress analysis performed. Thermal cycling and vibration testing have shown MCS interconnects to be significantly more reliable than solder columns. Also, MCS interconnects are less prone to handling damage than solder columns. Future work that includes shock testing, incorporation into a digital signal processor board, and process evaluation of expansion from a 400 I/O device to a device with over 1,100 I/O is identified.

  18. Laser applications in integrated circuits and photonics packaging

    NASA Astrophysics Data System (ADS)

    Lu, Yong Feng; Li, L. P.; Mendu, K.; Shi, J.

    2004-07-01

    Laser processing has large potential in the packaging of integrated circuits (IC). It can be used in many applications such as laser cleaning of IC mold tools, laser deflash to remove mold flash from heat sinks and lead wires of IC packages, laser singulation of BGA (ball grid array) and CSP (chip scale packages), laser reflow of solder ball on GBA, laser peeling for CSP, laser marking on packages and on Si wafers. Laser nanoimprinting of self-assembled nanoparticles has been recently developed to fabricate hemispherical cavity arrays on semiconductor surfaces. This process has the potential applications in fabrication and packaging of photonic devices such as waveguides and optical interconnections. During the implementation of all these applications, laser parameters, material issues, throughput, yield, reliability and monitoring techniques have to be taken into account. Monitoring of laser-induced plasma and laser induced acoustic wave has been used to understand and to control the processes involved in these applications. Numerical simulations can provide useful information on process analysis and optimization.

  19. Scheduling revisited workstations in integrated-circuit fabrication

    NASA Technical Reports Server (NTRS)

    Kline, Paul J.

    1992-01-01

    The cost of building new semiconductor wafer fabrication factories has grown rapidly, and a state-of-the-art fab may cost 250 million dollars or more. Obtaining an acceptable return on this investment requires high productivity from the fabrication facilities. This paper describes the Photo Dispatcher system which was developed to make machine-loading recommendations on a set of key fab machines. Dispatching policies that generally perform well in job shops (e.g., Shortest Remaining Processing Time) perform poorly for workstations such as photolithography which are visited several times by the same lot of silicon wafers. The Photo Dispatcher evaluates the history of workloads throughout the fab and identifies bottleneck areas. The scheduler then assigns priorities to lots depending on where they are headed after photolithography. These priorities are designed to avoid starving bottleneck workstations and to give preference to lots that are headed to areas where they can be processed with minimal waiting. Other factors considered by the scheduler to establish priorities are the nearness of a lot to the end of its process flow and the time that the lot has already been waiting in queue. Simulations that model the equipment and products in one of Texas Instrument's wafer fabs show the Photo Dispatcher can produce a 10 percent improvement in the time required to fabricate integrated circuits.

  20. Integrated circuits and electrode interfaces for noninvasive physiological monitoring.

    PubMed

    Ha, Sohmyung; Kim, Chul; Chi, Yu M; Akinin, Abraham; Maier, Christoph; Ueno, Akinori; Cauwenberghs, Gert

    2014-05-01

    This paper presents an overview of the fundamentals and state of the-art in noninvasive physiological monitoring instrumentation with a focus on electrode and optrode interfaces to the body, and micropower-integrated circuit design for unobtrusive wearable applications. Since the electrode/optrode-body interface is a performance limiting factor in noninvasive monitoring systems, practical interface configurations are offered for biopotential acquisition, electrode-tissue impedance measurement, and optical biosignal sensing. A systematic approach to instrumentation amplifier (IA) design using CMOS transistors operating in weak inversion is shown to offer high energy and noise efficiency. Practical methodologies to obviate 1/f noise, counteract electrode offset drift, improve common-mode rejection ratio, and obtain subhertz high-pass cutoff are illustrated with a survey of the state-of-the-art IAs. Furthermore, fundamental principles and state-of-the-art technologies for electrode-tissue impedance measurement, photoplethysmography, functional near-infrared spectroscopy, and signal coding and quantization are reviewed, with additional guidelines for overall power management including wireless transmission. Examples are presented of practical dry-contact and noncontact cardiac, respiratory, muscle and brain monitoring systems, and their clinical applications. PMID:24759282

  1. Wireless Amperometric Neurochemical Monitoring Using an Integrated Telemetry Circuit

    PubMed Central

    Roham, Masoud; Halpern, Jeffrey M.; Martin, Heidi B.; Chiel, Hillel J.

    2015-01-01

    An integrated circuit for wireless real-time monitoring of neurochemical activity in the nervous system is described. The chip is capable of conducting high-resolution amperometric measurements in four settings of the input current. The chip architecture includes a first-order ΔΣ modulator (ΔΣM) and a frequency-shift-keyed (FSK) voltage-controlled oscillator (VCO) operating near 433 MHz. It is fabricated using the AMI 0.5 μm double-poly triple-metal n-well CMOS process, and requires only one off-chip component for operation. Measured dc current resolutions of ~250 fA, ~1.5 pA, ~4.5 pA, and ~17 pA were achieved for input currents in the range of ±5, ±37, ±150, and ±600 nA, respectively. The chip has been interfaced with a diamond-coated, quartz-insulated, microneedle, tungsten electrode, and successfully recorded dopamine concentration levels as low as 0.5 μM wirelessly over a transmission distance of ~0.5 m in flow injection analysis experiments. PMID:18990633

  2. Novel immunoassay formats for integrated microfluidic circuits: diffusion immunoassays (DIA)

    NASA Astrophysics Data System (ADS)

    Weigl, Bernhard H.; Hatch, Anson; Kamholz, Andrew E.; Yager, Paul

    2000-03-01

    Novel designs of integrated fluidic microchips allow separations, chemical reactions, and calibration-free analytical measurements to be performed directly in very small quantities of complex samples such as whole blood and contaminated environmental samples. This technology lends itself to applications such as clinical diagnostics, including tumor marker screening, and environmental sensing in remote locations. Lab-on-a-Chip based systems offer many *advantages over traditional analytical devices: They consume extremely low volumes of both samples and reagents. Each chip is inexpensive and small. The sampling-to-result time is extremely short. They perform all analytical functions, including sampling, sample pretreatment, separation, dilution, and mixing steps, chemical reactions, and detection in an integrated microfluidic circuit. Lab-on-a-Chip systems enable the design of small, portable, rugged, low-cost, easy to use, yet extremely versatile and capable diagnostic instruments. In addition, fluids flowing in microchannels exhibit unique characteristics ('microfluidics'), which allow the design of analytical devices and assay formats that would not function on a macroscale. Existing Lab-on-a-chip technologies work very well for highly predictable and homogeneous samples common in genetic testing and drug discovery processes. One of the biggest challenges for current Labs-on-a-chip, however, is to perform analysis in the presence of the complexity and heterogeneity of actual samples such as whole blood or contaminated environmental samples. Micronics has developed a variety of Lab-on-a-Chip assays that can overcome those shortcomings. We will now present various types of novel Lab- on-a-Chip-based immunoassays, including the so-called Diffusion Immunoassays (DIA) that are based on the competitive laminar diffusion of analyte molecules and tracer molecules into a region of the chip containing antibodies that target the analyte molecules. Advantages of this

  3. Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.

    1984-01-01

    Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

  4. Remote sensing of microbial volatile organic compounds with a bioluminescent bioreporter integrated circuit

    NASA Astrophysics Data System (ADS)

    Ripp, Steven A.; Daumer, Kathleen A.; Garland, Jay L.; Simpson, Michael L.; Sayler, Gary S.

    2004-03-01

    As a means towards advanced, early-warning detection of microbial growth in enclosed structures, we have constructed a bioluminescent bioreporter for the detection of the microbial volatile organic compound (MVOC) p-cymene. MVOCs are produced as metabolic by-products of bacteria and fungi and are detectable before any visible signs of microbial growth appear, thereby serving as very early indicators of potential biocontamination problems. The bioreporter, designated Pseudomonas putida UT93, contains a Vibrio fischeri luxCDABE gene fusion to a p-cymene/p-cumate inducible promoter. Exposure of strain UT93 to p-cymene from approximately 0.02 to 850 ppm produced self-generated bioluminescence in less than 1.5 hours. The bioreporter was also interfaced with an integrated circuit microluminometer to create a miniaturized hybrid sensor for remote monitoring of p-cymene signatures. This bioluminescent bioreporter integrated circuit (BBIC) device was capable of detecting fungal presence within approximately 3.5 hours of initial exposure to Penicillium roqueforti.

  5. Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits.

    PubMed

    Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-26

    We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal-oxide-semiconductor field-effect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics. PMID:27403730

  6. From The Lab to The Fab: Transistors to Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Huff, Howard R.

    2003-09-01

    Transistor action was experimentally observed by John Bardeen and Walter Brattain in n-type polycrystalline germanium on December 16, 1947 (and subsequently polycrystalline silicon) as a result of the judicious placement of gold-plated probe tips in nearby single crystal grains of the polycrystalline material (i.e., the point-contact semiconductor amplifier, often referred to as the point-contact transistor).The device configuration exploited the inversion layer as the channel through which most of the emitted (minority) carriers were transported from the emitter to the collector. The point-contact transistor was manufactured for ten years starting in 1951 by the Western Electric Division of AT&T. The a priori tuning of the point-contact transistor parameters, however, was not simple inasmuch as the device was dependent on the detailed surface structure and, therefore, very sensitive to humidity and temperature as well as exhibiting high noise levels. Accordingly, the devices differed significantly in their characteristics and electrical instabilities leading to "burnout" were not uncommon. With the implementation of crystalline semiconductor materials in the early 1950s, however, p-n junction (bulk) transistors began replacing the point-contact transistor, silicon began replacing germanium and the transfer of transistor technology from the lab to the lab accelerated. We shall review the historical route by which single crystalline materials were developed and the accompanying methodologies of transistor fabrication, leading to the onset of the Integrated Circuit (IC) era. Finally, highlights of the early years of the IC era will be reviewed from the 256 bit through the 4M DRAM. Elements of IC scaling and the role of Moore's Law in setting the parameters by which the IC industry's growth was monitored will be discussed.

  7. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    NASA Technical Reports Server (NTRS)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  8. Resonance modes in coplanar lines with integrated Josephson circuits

    NASA Astrophysics Data System (ADS)

    Shvetsov, A. V.; Satanin, A. M.; Mironov, V. A.; Il'ichev, E.

    2013-11-01

    The propagation of microwave radiation in co-planar superconducting lines with Josephson circuits (microresonators) of various configurations is investigated. It is shown that dips in the frequency dependence of the transmission power of the waveguide line modes are associated with local modes of the circuit. The dependencies of shape and position of the dips on an external magnetic field and applied power are found. The calculation results can be used for developing modern cryoelectronic microwave superconducting devices.

  9. Equivalent circuit modeling of losses and dispersion in single and coupled lines for microwave and millimeter-wave integrated circuits

    NASA Astrophysics Data System (ADS)

    Tripathi, Vijai K.; Hill, Achim

    1988-02-01

    Losses and dispersion in open inhomogeneous guided-wave structures such as microstrips and other planar structures at microwave and millimeter-wave frequencies and in MMICs (monolithic microwave integrated circuits) have been modeled with circuits consisting of ideal lumped elements and lossless TEM (transverse electromagnetic) lines. It is shown that, given a propagation structure for which numerical techniques to compute the propagation characteristics are available, an equivalent circuit whose terminal frequency and time-domain properties are the same as the structure can be synthesized. This is accomplished by equating the network functions of the given single or coupled line multiport with that of the model and extracting all the parameters of the equivalent circuit model by using standard parameters identification procedures. This model is valid over a desired frequency range and can be used to help design both analog and digital circuits consisting of these structures and other active and passive elements utilizing standard CAD (computer-aided design) programs. To validate the accuracy and usefulness of the models, results for a mismatched 50-ohm line in alumina and a high-impedance MMIC line stub are included.

  10. Radiation-hardened CMOS integrated circuit development for space nuclear power applications

    NASA Astrophysics Data System (ADS)

    Gover, J. E.; Gregory, B. L.

    Examination of the types of systems required for space nuclear power applications suggests a need for microelectronics technology that can function during and after exposure to radiation levels exceeding 1 x 10 to the 16th neutrons/sq cm and gamma ray doses in excess of 1 x 10 to the 7th rad(Si). Radiation-hardened Complimentary Metal Oxide Silicon and Silicon Nitride Oxide Silicon (SNOS) ICs presently in development at Sandia National Laboratories' Center for Radiation-Hardened Microelectronics satisfy these radiation requirements. Future integrated circuit development will further advance the radiation hardness capabilities while extending the IC technology to 32-bit enhanced microprocessors and 1-Mbyte SNOS EEPROM memories.

  11. Advances in Current Rating Techniques for Flexible Printed Circuits

    NASA Technical Reports Server (NTRS)

    Hayes, Ron

    2014-01-01

    Twist Capsule Assemblies are power transfer devices commonly used in spacecraft mechanisms that require electrical signals to be passed across a rotating interface. Flexible printed circuits (flex tapes, see Figure 2) are used to carry the electrical signals in these devices. Determining the current rating for a given trace (conductor) size can be challenging. Because of the thermal conditions present in this environment the most appropriate approach is to assume that the only means by which heat is removed from the trace is thru the conductor itself, so that when the flex tape is long the temperature rise in the trace can be extreme. While this technique represents a worst-case thermal situation that yields conservative current ratings, this conservatism may lead to overly cautious designs when not all traces are used at their full rated capacity. A better understanding of how individual traces behave when they are not all in use is the goal of this research. In the testing done in support of this paper, a representative flex tape used for a flight Solar Array Drive Assembly (SADA) application was tested by energizing individual traces (conductors in the tape) in a vacuum chamber and the temperatures of the tape measured using both fine-gauge thermocouples and infrared thermographic imaging. We find that traditional derating schemes used for bundles of wires do not apply for the configuration tested. We also determine that single active traces located in the center of a flex tape operate at lower temperatures than those on the outside edges.

  12. Flip-chip integration of tilted VCSELs onto a silicon photonic integrated circuit.

    PubMed

    Lu, Huihui; Lee, Jun Su; Zhao, Yan; Scarcella, Carmelo; Cardile, Paolo; Daly, Aidan; Ortsiefer, Markus; Carroll, Lee; O'Brien, Peter

    2016-07-25

    In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler. PMID:27464079

  13. Method for producing a hybridization of detector array and integrated circuit for readout

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

    1993-01-01

    A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

  14. Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator.

    PubMed

    Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok

    2016-01-01

    The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (<100 Hz) with a capacitor of merely 6 fF, which is hosted in an FG metal-oxide-semiconductor field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). Finally, the proposed circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex. PMID:27242416

  15. Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator

    PubMed Central

    Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok

    2016-01-01

    The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (<100 Hz) with a capacitor of merely 6 fF, which is hosted in an FG metal-oxide-semiconductor field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). Finally, the proposed circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex. PMID:27242416

  16. Aluminum heat sink enables power transistors to be mounted integrally with printed circuit board

    NASA Technical Reports Server (NTRS)

    Seaward, R. C.

    1967-01-01

    Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.

  17. A Novel Analog Integrated Circuit Design Course Covering Design, Layout, and Resulting Chip Measurement

    ERIC Educational Resources Information Center

    Lin, Wei-Liang; Cheng, Wang-Chuan; Wu, Chen-Hao; Wu, Hai-Ming; Wu, Chang-Yu; Ho, Kuan-Hsuan; Chan, Chueh-An

    2010-01-01

    This work describes a novel, first-year graduate-level analog integrated circuit (IC) design course. The course teaches students analog circuit design; an external manufacturer then produces their designs in three different silicon chips. The students, working in pairs, then test these chips to verify their success. All work is completed within…

  18. Low-power integrated-circuit driver for ferrite-memory word lines

    NASA Technical Reports Server (NTRS)

    Katz, S.

    1970-01-01

    Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

  19. Advanced active quenching circuits for single-photon avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  20. Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

    NASA Technical Reports Server (NTRS)

    Alt, Shannon

    2016-01-01

    Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

  1. Exploratory research for a high temperature superconducting integrated circuit

    NASA Astrophysics Data System (ADS)

    Track, E. K.; Mukhanov, O.; Eckstein, J. N.; Bozovic, I.; Virshup, G. F.

    1993-09-01

    The objective of this effort was the investigation of the molecular beam epitaxy trilayer Josephson junction process under development by Varian Corporation. Under this effort, Stanford University provided fundamental materials characterization to understand and improve the surfaces and interfaces of the thin film structures. HYPRES Inc. provided an independent assessment of the junctions produced by Varian and addressed the possibilities of rapid single fluxquantum (RSFQ) circuit designs. The material system chosen for this investigation was bismuth strontium calcium copper oxide (BSSCO). The Josephson junction character of the devices was confirmed by the observation of microwave induced (Shapior) steps in the I-V curves. Contact resistance was reduced by three orders of magnitude by modulation doping the top few molecular layers of the upper superconductive electrode. The desired properties to warrant RSFQ circuit fabrication were not obtained. A material system with a higher Josephson junction critical temperature and higher critical current is necessary for circuits.

  2. GaAs Photonic Integrated Circuit (PIC) development for high performance communications

    SciTech Connect

    Sullivan, C.T.

    1998-03-01

    Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al,Ga,In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3{mu}m/1.55{mu}m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.

  3. Fully integrated biochip platforms for advanced healthcare.

    PubMed

    Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

    2012-01-01

    Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications. PMID:23112644

  4. Fully Integrated Biochip Platforms for Advanced Healthcare

    PubMed Central

    Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

    2012-01-01

    Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications. PMID:23112644

  5. An Advanced Time Averaging Modelling Technique for Power Electronic Circuits

    NASA Astrophysics Data System (ADS)

    Jankuloski, Goce

    For stable and efficient performance of power converters, a good mathematical model is needed. This thesis presents a new modelling technique for DC/DC and DC/AC Pulse Width Modulated (PWM) converters. The new model is more accurate than the existing modelling techniques such as State Space Averaging (SSA) and Discrete Time Modelling. Unlike the SSA model, the new modelling technique, the Advanced Time Averaging Model (ATAM) includes the averaging dynamics of the converter's output. In addition to offering enhanced model accuracy, application of linearization techniques to the ATAM enables the use of conventional linear control design tools. A controller design application demonstrates that a controller designed based on the ATAM outperforms one designed using the ubiquitous SSA model. Unlike the SSA model, ATAM for DC/AC augments the system's dynamics with the dynamics needed for subcycle fundamental contribution (SFC) calculation. This allows for controller design that is based on an exact model.

  6. A review of the technology and process on integrated circuits failure analysis applied in communications products

    NASA Astrophysics Data System (ADS)

    Ming, Zhimao; Ling, Xiaodong; Bai, Xiaoshu; Zong, Bo

    2016-02-01

    The failure analysis of integrated circuits plays a very important role in the improvement of the reliability in communications products. This paper intends to mainly introduce the failure analysis technology and process of integrated circuits applied in the communication products. There are many technologies for failure analysis, include optical microscopic analysis, infrared microscopic analysis, acoustic microscopy analysis, liquid crystal hot spot detection technology, optical microscopic analysis technology, micro analysis technology, electrical measurement, microprobe technology, chemical etching technology and ion etching technology. The integrated circuit failure analysis depends on the accurate confirmation and analysis of chip failure mode, the search of the root failure cause, the summary of failure mechanism and the implement of the improvement measures. Through the failure analysis, the reliability of integrated circuit and rate of good products can improve.

  7. An Integrated-Circuit Temperature Sensor for Calorimetry and Differential Temperature Measurement.

    ERIC Educational Resources Information Center

    Muyskens, Mark A.

    1997-01-01

    Describes the application of an integrated-circuit (IC) chip which provides an easy-to-use, inexpensive, rugged, computer-interfaceable temperature sensor for calorimetry and differential temperature measurement. Discusses its design and advantages. (JRH)

  8. High-performance GaAs/AlGaAs optical modulators: Their performance and packaging for microwave photonic integrated circuits

    SciTech Connect

    Kravitz, S.H.; Hietala, V.M.; Vawter, G.A.

    1994-12-31

    The goal of this effort is to build and package photonic integrated circuits (PICs). This infers that compact device design is very important, with all building blocks of the circuit aimed toward integration, low voltage operation, and manufacturability. With such a device, it is important that optical packaging by considered in the initial design. To this end, an advanced photonic packaging concept was designed. This concept employs vertical coupling of light both in and out of the package. This package concept is aimed at hermeticity, with no fiber penetrations through the walls of the package. This paper will describe the building blocks of this package, including output gratings, binary optics, and an automatic fiber capture device, called CLASP.

  9. Design of a semi-custom integrated circuit for the SLAC SLC timing control system

    SciTech Connect

    Linstadt, E.

    1984-10-01

    A semi-custom (gate array) integrated circuit has been designed for use in the SLAC Linear Collider timing and control system. The design process and SLAC's experiences during the phases of the design cycle are described. Issues concerning the partitioning of the design into semi-custom and standard components are discussed. Functional descriptions of the semi-custom integrated circuit and the timing module in which it is used are given.

  10. Active parallel redundancy for electronic integrator-type control circuits

    NASA Technical Reports Server (NTRS)

    Peterson, R. A.

    1971-01-01

    Circuit extends concept of redundant feedback control from type-0 to type-1 control systems. Inactive channels are slaves to the active channel, if latter fails, it is rejected and slave channel is activated. High reliability and elimination of single-component catastrophic failure are important in closed-loop control systems.

  11. Integrated-Circuit Controller For Brushless dc Motor

    NASA Technical Reports Server (NTRS)

    Le, Dong Tuan

    1994-01-01

    Generic circuit performs commutation-logic and power-switching functions for control of brushless dc motor. Controller includes commutation-logic and associated control circuitry, power supply, and inverters containing power transistors. Major advantages of controller are size, weight, and power consumption can be made less than other brushless-dc-motor controllers.

  12. Planarization techniques for vertically integrated metallic MEMS on silicon foundry circuits

    NASA Astrophysics Data System (ADS)

    Lee, J.-B.; English, J.; Ahn, C.-H.; Allen, M. G.

    1997-06-01

    Various micromachining techniques exist to realize integrated microelectromechanical systems (MEMS), which include sensors, signal processing and/or driving circuits, and/or actuators in one small die. Post-processing techniques performed on foundry-fabricated circuits (e.g., MOSIS) are attractive since such an approach eliminates the need for an in-house integrated circuit fabrication line to produce integrated MEMS. A method based on the combination of metallic (e.g., electroplating) micromachining techniques with multichip module deposited (MCM-D) processes is a possible candidate to realize vertically-stacked integrated MEMS using the post-processing of integrated circuits (post-IC) approach. In order to realize such devices, planarization of the surface of foundry-fabricated circuit chips or wafers is often required. In such planarization layers, mechanical and chemical stability, as well as adhesion between the circuit-containing substrate and the micromachined devices, should be addressed. A PI/BCB/PI sandwich interlayer system, which utilizes both advantages of DuPont polyimide PI 2611 and Dow benzocyclobutene (BCB) Cyclotene 3022 series, was developed as a planarization interlayer for vertically integrated MEMS. The PI/BCB/PI interlayer system shows an over 95% degree of planarization (DOP) as well as passes the Method 107G Thermal Shock from the military standard MIL-STD-202F. A 0960-1317/7/2/002/img7 interlayer system was also developed as an alternative to the PI/BCB/PI system.

  13. V-band low-noise integrated circuit receiver. [for space communication systems

    NASA Technical Reports Server (NTRS)

    Chang, K.; Louie, K.; Grote, A. J.; Tahim, R. S.; Mlinar, M. J.; Hayashibara, G. M.; Sun, C.

    1983-01-01

    A compact low-noise V-band integrated circuit receiver has been developed for space communication systems. The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate.

  14. Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits

    NASA Technical Reports Server (NTRS)

    Burns, J. L.; Choma, J., Jr.

    1982-01-01

    A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.

  15. The circuit of polychromator for Experimental Advanced Superconducting Tokamak edge Thomson scattering diagnostic.

    PubMed

    Zang, Qing; Hsieh, C L; Zhao, Junyu; Chen, Hui; Li, Fengjuan

    2013-09-01

    The detector circuit is the core component of filter polychromator which is used for scattering light analysis in Thomson scattering diagnostic, and is responsible for the precision and stability of a system. High signal-to-noise and stability are primary requirements for the diagnostic. Recently, an upgraded detector circuit for weak light detecting in Experimental Advanced Superconducting Tokamak (EAST) edge Thomson scattering system has been designed, which can be used for the measurement of large electron temperature (T(e)) gradient and low electron density (n(e)). In this new circuit, a thermoelectric-cooled avalanche photodiode with the aid circuit is involved for increasing stability and enhancing signal-to-noise ratio (SNR), especially the circuit will never be influenced by ambient temperature. These features are expected to improve the accuracy of EAST Thomson diagnostic dramatically. Related mechanical construction of the circuit is redesigned as well for heat-sinking and installation. All parameters are optimized, and SNR is dramatically improved. The number of minimum detectable photons is only 10. PMID:24089826

  16. The circuit of polychromator for Experimental Advanced Superconducting Tokamak edge Thomson scattering diagnostic

    SciTech Connect

    Zang, Qing; Zhao, Junyu; Chen, Hui; Li, Fengjuan; Hsieh, C. L.

    2013-09-15

    The detector circuit is the core component of filter polychromator which is used for scattering light analysis in Thomson scattering diagnostic, and is responsible for the precision and stability of a system. High signal-to-noise and stability are primary requirements for the diagnostic. Recently, an upgraded detector circuit for weak light detecting in Experimental Advanced Superconducting Tokamak (EAST) edge Thomson scattering system has been designed, which can be used for the measurement of large electron temperature (T{sub e}) gradient and low electron density (n{sub e}). In this new circuit, a thermoelectric-cooled avalanche photodiode with the aid circuit is involved for increasing stability and enhancing signal-to-noise ratio (SNR), especially the circuit will never be influenced by ambient temperature. These features are expected to improve the accuracy of EAST Thomson diagnostic dramatically. Related mechanical construction of the circuit is redesigned as well for heat-sinking and installation. All parameters are optimized, and SNR is dramatically improved. The number of minimum detectable photons is only 10.

  17. Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

    NASA Technical Reports Server (NTRS)

    Burns, Bradley M.; Blalock, Norman N.

    2010-01-01

    A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the

  18. Process development of beam-lead silicon-gate COS/MOS integrated circuits

    NASA Technical Reports Server (NTRS)

    Baptiste, B.; Boesenberg, W.

    1974-01-01

    Two processes for the fabrication of beam-leaded COS/MOS integrated circuits are described. The first process utilizes a composite gate dielectric of 800 A of silicon dioxide and 450 A of pyrolytically deposited A12O3 as an impurity barrier. The second process utilizes polysilicon gate metallization over which a sealing layer of 1000 A of pyrolytic Si3N4 is deposited. Three beam-lead integrated circuits have been implemented with the first process: (1) CD4000BL - three-input NOR gate; (2) CD4007BL - triple inverter; and (3) CD4013BL - dual D flip flop. An arithmetic and logic unit (ALU) integrated circuit was designed and implemented with the second process. The ALU chip allows addition with four bit accuracy. Processing details, device design and device characterization, circuit performance and life data are presented.

  19. Development of plasmonic isolator for integration into photonic integrated circuits (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Zayets, Vadym; Saito, Hidekazu; Ando, Koji; Yuasa, Shinji

    2015-09-01

    An optical isolator is an important component of an optical network. At present, there is a significant commercial demand for an optical isolator, which can be integrated into the Photonic Integrated Circuits (PIC). A new design of an integrated optical isolator, which utilizes unique non-reciprocal properties of surface plasmons, has been proposed [1]. The main obstacle for a practical realization of the proposed design is a substantial propagation loss of the surface plasmons in structures containing a ferromagnetic metal. The reduction of the propagation loss of a surface plasmon is the key to make the plasmonic isolator competitive with other designs of the integrated isolator. We studied experimentally optical and magneto-optical properties of a Fe plasmonic waveguide integrated with an AlGaAs rib waveguides and a Co plasmonic waveguide integrated with Si nanowire waveguides. It was demonstrated experimentally that by utilizing a double-dielectric plasmonic waveguide it is possible to reduce significantly the optical loss in a plasmonic waveguide. For Fe/SiO2/AlGaAs double-dielectric plasmonic waveguide the low optical loss of 0.03 dB/um is obtained. As far as we know at present it is a lowest optical loss demonstrated for a plasmon propagating at a surface of a ferromagnetic metal. For Co/Ti2O3/SiO2 double-dielectric plasmonic waveguide integrated with a Si nanowire waveguide on a Si substrate the optical loss of 0.7 dB/um was demonstrated. The designs of the plasmonic isolator utilizing a ring resonator or a non-reciprocal coupler were studied. [1] V. Zayets, H. Saito, S. Yuasa, and K. Ando,, Materials 5, 857 (2012).

  20. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

    PubMed

    Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

    2009-12-15

    Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits. PMID:19940239

  1. A fully integrated CMOS inverse sine circuit for computational systems

    NASA Astrophysics Data System (ADS)

    Seon, Jong-Kug

    2010-08-01

    An inverse trigonometric function generator using CMOS technology is presented and implemented. The development and synthesis of inverse trigonometric functional circuits based on the simple approximation equations are also introduced. The proposed inverse sine function generator has the infinite input range and can be used in many measurement and instrumentation systems. The nonlinearity of less than 2.8% for the entire input range of 0.5 Vp-p with a small-signal bandwidth of 3.2 MHz is achieved. The chip implemented in 0.25 μm CMOS process operates from a single 1.8 V supply. The measured power consumption and the active chip area of the inverse sine function circuit are 350 μW and 0.15 mm2, respectively.

  2. CMOS readout integrated circuit involving pixel-level ADC for microbolometer FPAs

    NASA Astrophysics Data System (ADS)

    Hwang, C. H.; Kwon, I. W.; Lee, Y. S.; Lee, H. C.

    2008-04-01

    The function of most readout integrated circuits (ROIC) for microbolometer focal plane arrays (FPAs) is supplying a bias voltage to a microbolometer of each pixel, integrating the current of a microbolometer, and transferring the signals from pixels to the output of a chip. However, the scale down of CMOS technology allows the integration of other functions. In this paper, we proposed a CMOS ROIC involving a pixel-level analog-to-digital converter (ADC) for 320 × 240 microbolometer FPAs. Such integration would improve the performance of a ROIC at the reduced system cost and power consumption. The noise performance of a microbolometer is improved by using the pixelwise readout structure because integration time can be increased up to 1ms. A Pixel circuit is consisted of a background skimming circuit, a differential amplifier, an integration capacitor and a 10-bit DRAM. First, the microbolometer current is integrated for 1ms after the skimming current correction. The differential amplifier operates as an op-Amp and the integration capacitor makes negative feedback loop between an output and a negative input of the op-Amp. And then, the integrated signal voltage is converted to digital signals using a modified single slope ADC in a pixel when the differential amplifier operates as a comparator and the 10-bit DRAM stores values of a counter. This readout circuit is designed and fabricated using a standard 0.35μm 2-poly 3-metal CMOS technology.

  3. Integrated circuits and logic operations based on single-layer MoS2.

    PubMed

    Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

    2011-12-27

    Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced. PMID:22073905

  4. Benchmark integration test for the Advanced Integration Matrix (AIM)

    NASA Astrophysics Data System (ADS)

    Paul, H.; Labuda, L.

    The Advanced Integration Matrix (AIM) studies and solves systems-level integration issues for exploration missions beyond Low Earth Orbit (LEO) through the design and development of a ground-based facility for developing revolutionary integrated systems for joint human-robotic missions. This systems integration approach to addressing human capability barriers will yield validation of advanced concepts and technologies, establish baselines for further development, and help identify opportunities for system-level breakthroughs. Early ground-based testing of mission capability will identify successful system implementations and operations, hidden risks and hazards, unexpected system and operations interactions, mission mass and operational savings, and can evaluate solutions to requirements-driving questions; all of which will enable NASA to develop more effective, lower risk systems and more reliable cost estimates for future missions. This paper describes the first in the series of integration tests proposed for AIM (the Benchmark Test) which will bring in partners and technology, evaluate the study processes of the project, and develop metrics for success.

  5. Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

    1981-01-01

    Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

  6. Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

    NASA Technical Reports Server (NTRS)

    Buehler, M. G. (Inventor)

    1985-01-01

    An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

  7. AlGaInAs MOVPE selective area growth for photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Decobert, Jean; Binet, Guillaume; Maia, Alvaro D. B.; Lagrée, Pierre-Yves; Kazmierski, Christophe

    2015-04-01

    We developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.

  8. System-Level Integrated Circuit (SLIC) Technology Development for Phased Array Antenna Applications

    NASA Technical Reports Server (NTRS)

    Windyka, John A.; Zablocki, Ed G.

    1997-01-01

    This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful.

  9. 2D and 3D heterogeneous photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Yoo, S. J. Ben

    2014-03-01

    Exponential increases in the amount of data that need to be sensed, communicated, and processed are continuing to drive the complexity of our computing, networking, and sensing systems. High degrees of integration is essential in scalable, practical, and cost-effective microsystems. In electronics, high-density 2D integration has naturally evolved towards 3D integration by stacking of memory and processor chips with through-silicon-vias. In photonics, too, we anticipate highdegrees of 3D integration of photonic components to become a prevailing method in realizing future microsystems for information and communication technologies. However, compared to electronics, photonic 3D integration face a number of challenges. This paper will review two methods of 3D photonic integration --- fs laser inscription and layer stacking, and discuss applications and future prospects.

  10. Onboard demand scheduling of a multibeam SS/TDMA satellite with integrated circuit and packet switching

    NASA Astrophysics Data System (ADS)

    Frank, A. J.

    1984-06-01

    A spacecraft switched time division multiple access communications satellite system is investigated. It achieves efficient bandwidth and system utilization by frequency reuse with multibeams, by integrated circuit and packet switching, and by onboard demand scheduling of beam interconnections on a frame-by-frame basis. An aim is to formulate a scheduling strategy that yields high utilization, subject to achieving acceptable levels of circuit blocking and packet queueing delay, and that is suitable for onboard use by meeting given time and complexity constraints. A genaralized software simulator of the onboard scheduling and switching operations was implemented. For this effort, we derive blocking probability formulae for an M/M/S/S queueing system with framing. Over 100 large-scale simulations were made of a system with a 5 x 5 switch, 100 slots per frame, and two-way circuit capability. Each run simulated 61.1 hours of circuit traffic only, or 83.3 minutes of integrated traffic.

  11. A circuit method to integrate metamaterial and graphene in absorber design

    NASA Astrophysics Data System (ADS)

    Wang, Zuojia; Zhou, Min; Lin, Xiao; Liu, Huixia; Wang, Huaping; Yu, Faxin; Lin, Shisheng; Li, Erping; Chen, Hongsheng

    2014-10-01

    We theoretically investigate a circuit analog approach to integrate graphene and metamaterial in electromagnetic wave absorber design. In multilayer graphene-metamaterial (GM) absorbers, ultrathin metamaterial elements are theoretically modeled as equivalent loads which attached to the junctions between two transmission lines. Combining with the benefits of tunable chemical potential in graphene, an optimized GM absorber is proposed as a proof of the circuit method. Numerical simulation results demonstrate the effectiveness of the circuit analytical model. The operating frequency of the GM absorber can be varied in terahertz frequency, indicating the potential applications of the GM absorber in sensors, modulators, and filters.

  12. Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1980-01-01

    The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

  13. External electro-optic probing of millimeter-wave integrated circuits

    NASA Technical Reports Server (NTRS)

    Whitaker, J. F.; Valdmanis, J. A.; Jackson, T. A.; Bhasin, K. B.; Romanofsky, Robert R.; Mourou, G. A.

    1989-01-01

    An external, noncontact electro-optic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system's ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively-doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC are reported.

  14. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    SciTech Connect

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  15. Topological Properties of Combinational Logic Functions for Very Large Scale Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Hiteshue, Elizabeth; Irvin, Kelsey; Lanzerotti, Mary; Vernizzi, Graziano; Kujawski, Joseph; Weatherwax, Allan

    2014-03-01

    This talk presents topological properties of combinational logic functions implemented with basic logic gates. Combinational logic can be implemented in very large scale integrated circuits, including high-performance microprocessors. Prior work has produced an historically-equivalent (HE) interpretation of Mr. E. F. Rent's 1960 memos for today's complex circuitry, an application to modern microprocessors, and topological constraints for electronic circuits. This talk will examine combinational logic blocks which may exhibit different connectivity and will evaluate their topological properties.

  16. INTEGRATED PLASMA CONTROL FOR ADVANCED TOKAMAKS

    SciTech Connect

    HUMPHREYS,D.A; FERRON,J.R; JOHNSON,R.D; LEUER,J.A; PENAFLOR,B.G; WALKER,M.L; WELANDER,A.S; KHAYRUTDINOV,R.R; DOKOUKA,V; EDGELL,D.H; FRANSSON,C.M

    2003-10-01

    OAK-B135 Advanced tokamaks (AT) are distinguished from conventional tokamaks by their high degree of shaping, achievement of profiles optimized for high confinement and stability characteristics, and active stabilization of MHD instabilities to attain high values of normalized beta and confinement. These high performance fusion devices thus require accurate regulation of the plasma boundary, internal profiles, pumping, fueling, and heating, as well as simultaneous and well-coordinated MHD control action to stabilize such instabilities as tearing modes and resistive wall modes. Satisfying the simultaneous demands on control accuracy, reliability, and performance for all of these subsystems requires a high degree of integration in both design and operation of the plasma control system in an advanced tokamak. The present work describes the approach, benefits, and progress made in integrated plasma control with application examples drawn from the DIII-D tokamak. The approach includes construction of plasma and system response models, validation of models against operating experiments, design of integrated controllers which operate in concert with one another as well as with supervisory modules, simulation of control action against off-line and actual machine control platforms, and iteration of the design-test loop to optimize performance.

  17. Advanced integrated life support system update

    NASA Technical Reports Server (NTRS)

    Whitley, Phillip E.

    1994-01-01

    The Advanced Integrated Life Support System Program (AILSS) is an advanced development effort to integrate the life support and protection requirements using the U.S. Navy's fighter/attack mission as a starting point. The goal of AILSS is to optimally mate protection from altitude, acceleration, chemical/biological agent, thermal environment (hot, cold, and cold water immersion) stress as well as mission enhancement through improved restraint, night vision, and head-mounted reticules and displays to ensure mission capability. The primary emphasis to date has been to establish garment design requirements and tradeoffs for protection. Here the garment and the human interface are treated as a system. Twelve state-off-the-art concepts from government and industry were evaluated for design versus performance. On the basis of a combination of centrifuge, thermal manikin data, thermal modeling, and mobility studies, some key design parameters have been determined. Future efforts will concentrate on the integration of protection through garment design and the use of a single layer, multiple function concept to streamline the garment system.

  18. Monolithical integration of polymer-based microfluidic structures on application-specific integrated circuits

    NASA Astrophysics Data System (ADS)

    Chemnitz, Steffen; Schafer, Heiko; Schumacher, Stephanie; Koziy, Volodymyr; Fischer, Alexander; Meixner, Alfred J.; Ehrhardt, Dietmar; Bohm, Markus

    2003-04-01

    In this paper, a concept for a monolithically integrated chemical lab on microchip is presented. It contains an ASIC (Application Specific Integrated Circuit), an interface to the polymer based microfluidic layer and a Pyrex glass cap. The top metal layer of the ASIC is etched off and replaced by a double layer metallization, more suitable to microfluidic and electrophoresis systems. The metallization consists of an approximately 50 nm gold layer and a 10 nm chromium layer, acting as adhesion promoter. A necessary prerequisite is a planarized ASIC topography. SU-8 is used to serve as microfluidic structure because of its excellent aspect ratio. This polymer layer contains reservoirs, channels, mixers and electrokinetic micro pumps. The typical channel cross section is 10μm"10μm. First experimental results on a microfluidic pump, consisting of pairs of interdigitated electrodes on the bottom of the channel and without any moving parts show a flow of up to 50μm per second for low AC-voltages in the range of 5 V for aqueous fluids. The microfluidic system is irreversibly sealed with a 150μm thick Pyrex glass plate bonded to the SU-8-layer, supported by oxygen plasma. Due to capillary forces and surfaces properties of the walls the system is self-priming. The technologies for the fabrication of the microfluidic system and the preparation of the interface between the lab layer and the ASIC are presented.

  19. Super-Junction PIN Photodiode to Integrate Optoelectronic Integrated Circuits in Standard Technologies: A Numerical Study

    NASA Astrophysics Data System (ADS)

    Roig, Jaume; Stefanov, Evgueniy; Morancho, Frédéric

    2007-07-01

    The use of super-junction (SJ) techniques in PIN photodiodes is proposed in this letter for the first time with the objective to assist the optoelectronic integrated circuits (OEICs) implementation in complementary metal oxide semiconductor (CMOS), bipolar CMOS (BiCMOS) and bipolar-CMOS-double diffused MOS (BCD) technologies. Its technological viability is also discussed to make it credible as an alternative to other OEICs approaches. Numerical simulation of realistic SJ-PIN devices, widely used in high power electronics, demonstrates the possibility to integrate high-performance CMOS-based OEICs in epitaxial layers with doping concentrations above 1× 1015 cm-3. The induced lateral depletion at low reverse biased voltage, assisted by the alternated N and P-doped pillars, allows high-speed transient response in SJ-PIN detecting wavelengths between 400 and 800 nm. Moreover, other important parameters as the responsivity and the dark current are not degraded in respect to the conventional PIN (C-PIN) structures.

  20. Method and apparatus for in-system redundant array repair on integrated circuits

    DOEpatents

    Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc B.; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Ouellette, Michael R.; Strissel, Scott A.

    2008-07-08

    Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

  1. Method and apparatus for in-system redundant array repair on integrated circuits

    DOEpatents

    Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc B.; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Ouellette, Michael R.; Strissel, Scott A.

    2008-07-29

    Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

  2. Method and apparatus for in-system redundant array repair on integrated circuits

    DOEpatents

    Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc B.; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Ouellette, Michael R.; Strissel, Scott A.

    2007-12-18

    Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

  3. A compact picosecond pulsed laser source using a fully integrated CMOS driver circuit

    NASA Astrophysics Data System (ADS)

    He, Yuting; Li, Yuhua; Yadid-Pecht, Orly

    2016-03-01

    Picosecond pulsed laser source have applications in areas such as optical communications, biomedical imaging and supercontinuum generation. Direct modulation of a laser diode with ultrashort current pulses offers a compact and efficient approach to generate picosecond laser pulses. A fully integrated complementary metaloxide- semiconductor (CMOS) driver circuit is designed and applied to operate a 4 GHz distributed feedback laser (DFB). The CMOS driver circuit combines sub-circuits including a voltage-controlled ring oscillator, a voltagecontrolled delay line, an exclusive-or (XOR) circuit and a current source circuit. Ultrashort current pulses are generated by the XOR circuit when the delayed square wave is XOR'ed with the original square wave from the on-chip oscillator. Circuit post-layout simulation shows that output current pulses injected into an equivalent circuit load of the laser have a pulse full width at half maximum (FWHM) of 200 ps, a peak current of 80 mA and a repetition rate of 5.8 MHz. This driver circuit is designed in a 0.13 μm CMOS process and taped out on a 0.3 mm2 chip area. This CMOS chip is packaged and interconnected with the laser diode on a printed circuit board (PCB). The optical output waveform from the laser source is captured by a 5 GHz bandwidth photodiode and an 8 GHz bandwidth oscilloscope. Measured results show that the proposed laser source can output light pulses with a pulse FWHM of 151 ps, a peak power of 6.4 mW (55 mA laser peak forward current) and a repetition rate of 5.3 MHz.

  4. Detection of orbital angular momentum using a photonic integrated circuit

    PubMed Central

    Rui, Guanghao; Gu, Bing; Cui, Yiping; Zhan, Qiwen

    2016-01-01

    Orbital angular momentum (OAM) state of photons offer an attractive additional degree of freedom that has found a variety of applications. Measurement of OAM state, which is a critical task of these applications, demands photonic integrated devices for improved fidelity, miniaturization, and reconfiguration. Here we report the design of a silicon-integrated OAM receiver that is capable of detecting distinct and variable OAM states. Furthermore, the reconfiguration capability of the detector is achieved by applying voltage to the GeSe film to form gratings with alternate states. The resonant wavelength for arbitrary OAM state is demonstrated to be tunable in a quasi-linear manner through adjusting the duty cycle of the gratings. This work provides a viable approach for the realization of a compact integrated OAM detection device with enhanced functionality that may find important applications in optical communications and information processing with OAM states. PMID:27321916

  5. Detection of orbital angular momentum using a photonic integrated circuit.

    PubMed

    Rui, Guanghao; Gu, Bing; Cui, Yiping; Zhan, Qiwen

    2016-01-01

    Orbital angular momentum (OAM) state of photons offer an attractive additional degree of freedom that has found a variety of applications. Measurement of OAM state, which is a critical task of these applications, demands photonic integrated devices for improved fidelity, miniaturization, and reconfiguration. Here we report the design of a silicon-integrated OAM receiver that is capable of detecting distinct and variable OAM states. Furthermore, the reconfiguration capability of the detector is achieved by applying voltage to the GeSe film to form gratings with alternate states. The resonant wavelength for arbitrary OAM state is demonstrated to be tunable in a quasi-linear manner through adjusting the duty cycle of the gratings. This work provides a viable approach for the realization of a compact integrated OAM detection device with enhanced functionality that may find important applications in optical communications and information processing with OAM states. PMID:27321916

  6. Pixelwise readout integrated circuits with pixel-level ADC for microbolometers

    NASA Astrophysics Data System (ADS)

    Hwang, C. H.; Kim, C. B.; Lee, Y. S.; Yu, B. G.; Lee, H. C.

    2007-04-01

    Pixelwise integrated circuits involving a pixel-level analog-to-digital converter (ADC) are studied for 320 × 240 microbolometer focal plane arrays (FPAs). It is necessary to use the pixelwise readout architecture for decreasing the thermal noise. However, it is hard to locate a sufficiently large integration capacitor in a unit pixel of FPAs because of the area limitation. To effectively overcome this problem, a two step integration method is proposed. First, after integrating the current of the microbolometer for 32μs, upper 5bits of the 13bit digital signal are output through a pixel-level ADC. Then, the current of the microbolometer is integrated during 1ms after the skimming current correction using upper 5bits in a field-programmable gate array (FPGA), and then lower 8bits are obtained through a pixel-level ADC. Finally, upper 5bits and lower 8bits are combined into the digital image signal after the gain and offset correction in digital signal processor (DSP) Each 2×2 pixel shares an readout circuit, including a current-mode background skimming circuit, an operational amplifier(op-Amp), an integration capacitor and a single slope ADC. When the current of a microbolometer is integrated, the integration capacitor is connected between a negative input and an output of the op-Amp. Therefore a capacitive transimpedance amplifier (CTIA) has been employed as the input circuit of the microbolometer. When the output of a microbolometer is converted to digital signal, the Op-Amp is used as a comparator of the single slope ADC. This readout circuit is designed to achieve 35×35μm2 pixel size in 0.35μm 2-poly 3-metal CMOS technology.

  7. Molten-Caustic-Leaching (MCL or Gravimelt) System Integration Project. Topical report for test circuit operation

    SciTech Connect

    Not Available

    1990-11-01

    This is a report of the results obtained from the operation of an integrated test circuit for the Molten-Caustic-Leaching (MCL or Gravimelt) process for the desulfurization and demineralization of coal. The objectives of operational testing of the 20 pounds of coal per hour integrated MCL test circuit are: (1) to demonstrate the technical capability of the process for producing a demineralized and desulfurized coal that meets New Source Performance Standards (NSPS); (2) to determine the range of effective process operation; (3) to test process conditions aimed at significantly lower costs; and (4) to deliver product coal.

  8. Magnetic force microscopy method and apparatus to detect and image currents in integrated circuits

    DOEpatents

    Campbell, Ann. N.; Anderson, Richard E.; Cole, Jr., Edward I.

    1995-01-01

    A magnetic force microscopy method and improved magnetic tip for detecting and quantifying internal magnetic fields resulting from current of integrated circuits. Detection of the current is used for failure analysis, design verification, and model validation. The interaction of the current on the integrated chip with a magnetic field can be detected using a cantilevered magnetic tip. Enhanced sensitivity for both ac and dc current and voltage detection is achieved with voltage by an ac coupling or a heterodyne technique. The techniques can be used to extract information from analog circuits.

  9. Magnetic force microscopy method and apparatus to detect and image currents in integrated circuits

    DOEpatents

    Campbell, A.N.; Anderson, R.E.; Cole, E.I. Jr.

    1995-11-07

    A magnetic force microscopy method and improved magnetic tip for detecting and quantifying internal magnetic fields resulting from current of integrated circuits are disclosed. Detection of the current is used for failure analysis, design verification, and model validation. The interaction of the current on the integrated chip with a magnetic field can be detected using a cantilevered magnetic tip. Enhanced sensitivity for both ac and dc current and voltage detection is achieved with voltage by an ac coupling or a heterodyne technique. The techniques can be used to extract information from analog circuits. 17 figs.

  10. System and method for interfacing large-area electronics with integrated circuit devices

    DOEpatents

    Verma, Naveen; Glisic, Branko; Sturm, James; Wagner, Sigurd

    2016-07-12

    A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

  11. Relay Protection and Automation Systems Based on Programmable Logic Integrated Circuits

    SciTech Connect

    Lashin, A. V. Kozyrev, A. V.

    2015-09-15

    One of the most promising forms of developing the apparatus part of relay protection and automation devices is considered. The advantages of choosing programmable logic integrated circuits to obtain adaptive technological algorithms in power system protection and control systems are pointed out. The technical difficulties in the problems which today stand in the way of using relay protection and automation systems are indicated and a new technology for solving these problems is presented. Particular attention is devoted to the possibility of reconfiguring the logic of these devices, using programmable logic integrated circuits.

  12. An integrated circuit for wireless ambulatory arrhythmia monitoring systems.

    PubMed

    Kim, Hyejung; Yazicioglu, Refet Firat; Torfs, Tom; Merken, Patrick; Van Hoof, Chris; Yoo, Hoi-Jun

    2009-01-01

    An ECG signal processor (ESP) is proposed for the low energy wireless ambulatory arrhythmia monitoring system. The ECG processor mainly performs filtering, compression, classification and encryption. The data compression flow consisting of skeleton and modified Huffman coding is the essential function to reduce the transmission energy consumption and the memory capacity, which are the most energy consuming part. The classification flow performs the arrhythmia analysis to alert the abnormality. The proposed ESP IC is implemented in 0.18-microm CMOS process and integrated into the wireless arrhythmia monitoring sensor platform. By integration of the ESP, the total system energy reduction is evaluated by 95.6%. PMID:19963908

  13. Readout integrated circuit for microbolometer with an analog non-uniformity correction

    NASA Astrophysics Data System (ADS)

    Hwang, C. H.; Woo, D. H.; Lee, Y. S.; Lee, H. C.

    2005-10-01

    We have developed a microbolometer readout integrated circuit (ROIC) that corrects the non-uniformity in analog operation and acts in both normal mode and edge detection mode. A capacitive transimpedance amplifier (CTIA) has been employed as the input circuit of the microbolometer. Generally, when fabricating microbolometer focal plane arrays (FPAs), offset-error and gain-error in the inter-microbolometer are induced by fabrication error. They are shown as fixed pattern noise (FPN) in the infrared image. In the present study, a circuit correcting the offset-error and the gain-error in the normal mode by controlling the bias and the integration capacitance of the CTIA is proposed. This circuit does not require an additional DSP chip, and the non-uniformity is corrected before the analog to digital conversion (ADC). Thus, it can utilize 3-4 bits lower ADC compared to the conventional readout circuit. In the edge detection mode, after correcting the gain-error in two adjacent pixels, edge detection can be realized by subtracting their signal without the DSP. We have designed the suggested circuit to output a 10bit level effective infrared signal using 0.35um 2-poly 3-metal CMOS technology.

  14. An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

    NASA Technical Reports Server (NTRS)

    Lubecke, Victor M.; Mcgrath, William R.; Rutledge, David B.

    1991-01-01

    Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

  15. Quantum dash based single section mode locked lasers for photonic integrated circuits.

    PubMed

    Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

    2014-05-01

    We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs. PMID:24921823

  16. A UVLO Circuit in SiC Compatible with Power MOSFET Integration

    SciTech Connect

    Glover, Michael; Shepherd, Paul; Francis, Matt; Mudholkar, Dr. Mihir; Mantooth, Alan; Ericson, Milton Nance; Frank, Steven; Britton Jr, Charles L; Marlino, Laura D; Mcnutt, Tyler; Barkley, Dr. Adam; Whitaker, Mr. Bret; Lostetter, Dr. Alex

    2014-01-01

    The design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0 C and 200 C. Captured data shows the circuit to be functional over a temperature range from -55 C to 300 C. The design of the circuit and test results is presented.

  17. Integrated circuit failure analysis by low-energy charge-induced voltage alteration

    DOEpatents

    Cole, E.I. Jr.

    1996-06-04

    A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.

  18. Integrated circuit failure analysis by low-energy charge-induced voltage alteration

    DOEpatents

    Cole, Jr., Edward I.

    1996-01-01

    A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

  19. Advanced Integrated Optical Signal Processing Components.

    NASA Astrophysics Data System (ADS)

    Rastani, Kasra

    This research was aimed at the development of advanced integrated optical components suitable for devices capable of processing multi-dimensional inputs. In such processors, densely packed waveguide arrays with low crosstalk are needed to provide dissection of the information that has been partially processed. Waveguide arrays also expand the information in the plane of the processor while maintaining its coherence. Rib waveguide arrays with low loss, high mode confinement and highly uniform surface quality (660 elements, 8 μm wide, 1 μm high, and 1 cm long with 2 mu m separations) were fabricated on LiNbO _3 substrates through the ion beam milling technique. A novel feature of the multi-dimensional IO processor architecture proposed herein is the implementation of large area uniform outcoupling (with low to moderate outcoupling efficiencies) from rib waveguide arrays in order to access the third dimension of the processor structure. As a means of outcoupling, uniform surface gratings (2 μm and 4 μm grating periods, 0.05 μm high and 1 mm long) with low outcoupling efficiencies (of approximately 2-18%/mm) were fabricated on the nonuniform surface of the rib waveguide arrays. As a practical technique of modulating the low outcoupling efficiencies of the surface gratings, it was proposed to alter the period of the grating as a function of position along each waveguide. Large aperture (2.5 mm) integrated lenses with short positive focal lengths (1.2-2.5 cm) were developed through a modification of the titanium-indiffused proton exchanged (TIPE) technique. Such integrated lenses were fabricated by increasing the refractive index of the slab waveguides by the TIPE process while maintaining the refractive index of the lenses at the lower level of Ti:LiNbO _3 waveguide. By means of curvature reversal of the integrated lenses, positive focal length lenses have been fabricated while providing high mode confinement for the slab waveguide. The above elements performed as

  20. Corrosion of silicon integrated circuits and lifetime predictions in implantable electronic devices.

    PubMed

    Vanhoestenberghe, A; Donaldson, N

    2013-06-01

    Corrosion is a prime concern for active implantable devices. In this paper we review the principles underlying the concepts of hermetic packages and encapsulation, used to protect implanted electronics, some of which remain widely overlooked. We discuss how technological advances have created a need to update the way we evaluate the suitability of both protection methods. We demonstrate how lifetime predictability is lost for very small hermetic packages and introduce a single parameter to compare different packages, with an equation to calculate the minimum sensitivity required from a test method to guarantee a given lifetime. In the second part of this paper, we review the literature on the corrosion of encapsulated integrated circuits (ICs) and, following a new analysis of published data, we propose an equation for the pre-corrosion lifetime of implanted ICs, and discuss the influence of the temperature, relative humidity, encapsulation and field-strength. As any new protection will be tested under accelerated conditions, we demonstrate the sensitivity of acceleration factors to some inaccurately known parameters. These results are relevant for any application of electronics working in a moist environment. Our comparison of encapsulation and hermetic packages suggests that both concepts may be suitable for future implants. PMID:23685410

  1. High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

    NASA Technical Reports Server (NTRS)

    Shalkhauser, K. A.; Li, K.; Shih, Y. C.

    1992-01-01

    Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.

  2. Theoretical design of photonic crystal devices for integrated optical circuits

    NASA Astrophysics Data System (ADS)

    Mekis, Attila

    2000-12-01

    In this thesis we investigate novel photonic crystal devices that can be used as building blocks of all- optical circuits. We contrast the behavior of light in photonic crystal systems and in their traditional counterparts. We exhibit that bends in photonic crystals are able to transmit light with over 90% efficiency for large bandwidths and with 100% efficiency for specific frequencies. In contrast to traditional waveguides, bound states in photonic crystal waveguides can also exist in constrictions and above the cutoff frequency. We discuss how to lower reflections encountered when photonic crystal waveguides are terminated, both in an experimental setup as well as in numerical simulations. We show that light can be very efficiently coupled into and out of photonic crystal waveguides using tapered dielectric waveguides. In time-domain simulations of photonic crystal waveguides, spurious reflections from cell edges can be eliminated by terminating the waveguide with a Bragg reflector waveguide. We demonstrate novel lasing action in two-dimensional photonic crystal slabs with gain media, where lasing occurs at saddle points in the band structure, in contrast to one-dimensional photonic crystals. We also design a photonic crystal slab with organic gain media that has a TE-like pseudogap. We demonstrate that such a slab can support a high- Q defect mode, enabling low threshold lasing, and we discuss how the quality factor depends on the design parameters. We also propose to use two- dimensional photonic crystal slabs as directionally efficient free-space couplers. We draft methods to calculate the coupling constant both numerically and analytically, using a finite-difference time-domain method and the volume current method with a Green's function approach, respectively. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

  3. Towards a DNA Nanoprocessor: Reusable Tile-Integrated DNA Circuits.

    PubMed

    Gerasimova, Yulia V; Kolpashchikov, Dmitry M

    2016-08-22

    Modern electronic microprocessors use semiconductor logic gates organized on a silicon chip to enable efficient inter-gate communication. Here, arrays of communicating DNA logic gates integrated on a single DNA tile were designed and used to process nucleic acid inputs in a reusable format. Our results lay the foundation for the development of a DNA nanoprocessor, a small and biocompatible device capable of performing complex analyses of DNA and RNA inputs. PMID:27430161

  4. A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

    NASA Astrophysics Data System (ADS)

    Arefin, Md Shamsul; Bulut Coskun, M.; Alan, Tuncay; Redoute, Jean-Michel; Neild, Adrian; Rasit Yuce, Mehmet

    2014-06-01

    This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0-5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

  5. A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

    SciTech Connect

    Arefin, Md Shamsul Redoute, Jean-Michel; Rasit Yuce, Mehmet; Bulut Coskun, M.; Alan, Tuncay; Neild, Adrian

    2014-06-02

    This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0–5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

  6. Visualization of VLSI integrated circuits by means of ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Picart, B.; Dugoujon, L.; Petit, O.; Destrade, C.; Leon, C.; Nguyen, H. T.; Marcerou, J. P.

    1989-07-01

    The increasing density and complexity of integrated circuits illustrates the quick evolution of their technology. As a consequence, new methods of internal testing are now necessary for failure analysis that allow for the visualization of the internal functioning of these circuits. In this way such methods as electronic microscopy working in the voltage contrast process have been developed a longtime ago. An alternate promising method uses liquid crystals for the visualization of electric fields present on the surface of the chip. In this article we investigate the various potentialities of the nematic and smectic mesophases for such a visualization. We will especially underline the use of new ferroelectric liquid crystals which could allow for the dynamical analysis of integrated circuits.

  7. Recursive multiport schemes for implementing quantum algorithms with photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Tabia, Gelo Noel M.

    2016-01-01

    We present recursive multiport schemes for implementing quantum Fourier transforms and the inversion step in Grover's algorithm on an integrated linear optics device. In particular, each scheme shows how to execute a quantum operation on 2 d modes using a pair of circuits for the same operation on d modes. The circuits operate on path-encoded qudits and realize d -dimensional unitary transformations on these states using linear optical networks with O (d2) optical elements. To evaluate the schemes against realistic errors, we ran simulations of proof-of-principle experiments using a simple fabrication model of silicon-based photonic integrated devices that employ directional couplers and thermo-optic modulators for beam splitters and phase shifters, respectively. We find that high-fidelity performance is achievable with our multiport circuits for 2-qubit and 3-qubit quantum Fourier transforms, and for quantum search on four-item and eight-item databases.

  8. W-band Phased Array Systems using Silicon Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Kim, Sang Young

    This thesis presents the silicon-based on-chip W-band phased array systems. An improved quadrature all-pass filter (QAF) and its implementation in 60--80 GHz active phase shifter using 0.13 microm SiGe BiCMOS technology is presented. It is demonstrated that with the inclusion of an Rs/R in the high Q branches of C and L, the sensitivity to the loading capacitance, therefore the I/Q phase and amplitude errors are minimized. This technique is especially suited for wideband millimeter-wave circuits where the loading capacitance (CL) is comparable to the filter capacitance (C). A prototype 60--80 GHz active phased shifter using the improved QAF is demonstrated. The overall chip size is 1.15 x 0.92 mm2 with the power consumption of 108 mW. The measured S11 and S22 are < -10 dB at 60--80 GHz and 60--73 GHz, respectively. The measured average power gain is 11.0--14.7 dB at 60--79 GHz with the rms gain error of < 1.3 dB at 60--78 GHz for 4-bit phase states. And the rms phase error is < 9.1 degree at 60--78.5 GHz showing wideband 4-bit performance. The measured NF is 9--11.6 dB at 63--75 GHz and the measured P 1dB is -27 dBm at 70 GHz. In another project, a 67--78 GHz 4-bit passive phase shifter using 0.13 microm CMOS switches is demonstrated. The phase shifter is based on a low-pass pi-network. The chip size is 0.45 x 0.3 mm2 without pads and consumes virtually no power. The measured S11 and S22 is < -10 dB at 67--81 GHz for all 16 phase states. The measured gain of 4-bit phase shifter is -19.2 +/- 3.7 dB at 77 GHz with the rms gain error of < 11.25 degree at 67--78 GHz. And the measured rms phase error is < 2.5 dB at 67--78 GHz. The measured P1dB is > 8 dBm and the simulated IIP3 is > 22 dBm. A low-power 76--84 GHz 4-element phased array receiver using the designed passive phase shifter is presented. The power consumption is minimized by using a single-ended design and alternating the amplifiers and phase shifter cells to result in a low noise figure at a low power

  9. Stress-induced voiding study in integrated circuit interconnects

    NASA Astrophysics Data System (ADS)

    Hou, Yuejin; Tan, Cher Ming

    2008-07-01

    An analytical equation for an ultralarge-scale integration interconnect lifetime due to stress-induced voiding (SIV) is derived from the energy perspective. It is shown that the SIV lifetime is strongly dependent on the passivation quality at the cap layer/interconnect interface, the confinement effect by the surrounding materials to the interconnects, and the available diffusion paths in the interconnects. Contrary to the traditional power-law creep model, we find that the temperature exponent in SIV lifetime formulation is determined by the available diffusion paths for the interconnect atoms and the interconnect geometries. The critical temperature for the SIV is found to be independent of passivation integrity and dielectric confinement effect. Actual stress-free temperature (SFT) during the SIV process is also found to be different from the dielectric/cap layer deposition temperature or the final annealing temperature of the metallization, and it can be evaluated analytically once the activation energy, temperature exponent and critical temperature are determined experimentally. The smaller actual SFT indicates that a strong stress relaxation occurs before the high temperature storage test. Our results show that our SIV lifetime model can be used to predict the SIV lifetime in nano-interconnects.

  10. 76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-17

    ... of Japan. 75 FR 24742-43. The complaint alleges violations of section 337 of the Tariff Act of 1930... Freescale Xiqing, Freescale Innovation, and Newark, respectively. 75 FR 51843 (August 23, 2010). On February... COMMISSION In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and...

  11. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    PubMed Central

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  12. Standard high-reliability integrated circuit logic packaging. [for deep space tracking stations

    NASA Technical Reports Server (NTRS)

    Slaughter, D. W.

    1977-01-01

    A family of standard, high-reliability hardware used for packaging digital integrated circuits is described. The design transition from early prototypes to production hardware is covered and future plans are discussed. Interconnections techniques are described as well as connectors and related hardware available at both the microcircuit packaging and main-frame level. General applications information is also provided.

  13. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    NASA Technical Reports Server (NTRS)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  14. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    PubMed

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  15. 77 FR 33486 - Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-06

    ... COMMISSION Certain Integrated Circuit Packages Provided With Multiple Heat- Conducting Paths and Products... With Multiple Heat-Conducting Paths and Products Containing Same, DN 2899; the Commission is soliciting... multiple heat-conducting paths and products containing same. The complaint names as respondents...

  16. Ultraprecise phase manipulation in integrated photonic quantum circuits with generalized directional couplers

    NASA Astrophysics Data System (ADS)

    Heilmann, R.; Keil, R.; Gräfe, M.; Nolte, S.; Szameit, A.

    2014-08-01

    We present an innovative approach for ultra-precise phase manipulation in integrated photonic quantum circuits. To this end, we employ generalized directional couplers that utilize a detuning of the propagation constant in optical waveguides by the overlap of adjacent waveguide modes. We demonstrate our findings in experiments with classical as well as quantum light.

  17. Effective Teaching of the Physical Design of Integrated Circuits Using Educational Tools

    ERIC Educational Resources Information Center

    Aziz, Syed Mahfuzul; Sicard, Etienne; Ben Dhia, Sonia

    2010-01-01

    This paper presents the strategies used for effective teaching and skill development in integrated circuit (IC) design using project-based learning (PBL) methodologies. It presents the contexts in which these strategies are applied to IC design courses at the University of South Australia, Adelaide, Australia, and the National Institute of Applied…

  18. 77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-29

    ...Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Semiconductor Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is soliciting comments on any public interest issues raised by the complaint or complainant's filing under section 210.8(b) of the Commission's Rules of Practice and Procedure (19 CFR......

  19. 76 FR 76434 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-07

    ...Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled In Re Certain Integrated Circuits, Chipsets, And Products Containing Same including Televisions, DN 2860; the Commission is soliciting comments on any public interest issues raised by the...

  20. 77 FR 42764 - Certain Integrated Circuits, Chipsets, & Products Containing Same Including Televisions; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-20

    ...Notice is hereby given that the presiding administrative law judge has issued a Final Initial Determination and Recommended Determination on Remedy and Bonding in the above-captioned investigation. The Commission is soliciting comments on public interest issues raised by the recommended relief, specifically a limited exclusion order against certain integrated circuits, chipsets, and products......

  1. Active rc networks of low sensitivity for integrated circuit transfer function

    NASA Technical Reports Server (NTRS)

    Huelsman, L. P.; Kerwin, W. J.; Newcomb, R. W.

    1968-01-01

    Active RC network is capable of extremely high Q performance with exceptional stability and has independently adjustable zeros and poles. The circuit consists of two integrators and two summers that are interconnected to produce a complete second-order numerator and a second-order denominator.

  2. Development of processing procedures for advanced silicon solar cells. [antireflection coatings and short circuit currents

    NASA Technical Reports Server (NTRS)

    Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

    1975-01-01

    Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

  3. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

    PubMed

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

    2016-01-01

    This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

  4. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

    PubMed Central

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

    2016-01-01

    This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

  5. In-plant testing of a novel coal cleaning circuit using advanced technologies. Final technical report, September 1, 1995--August 31, 1996

    SciTech Connect

    Honaker, R.Q.; Reed, S.; Mohanty, M.K.

    1997-05-01

    A circuit comprised of advanced fine coal cleaning technologies was evaluated in an operating preparation plant to determine circuit performance and to compare the performance with current technologies used to treat -16 mesh fine coal. The circuit integrated a Floatex hydrosizer, a Falcon enhanced gravity concentrator and a Jameson flotation cell. A Packed-Column was used to provide additional reductions in the pyritic sulfur and ash contents by treatment of the Floatex-Falcon-Jameson circuit product. For a low sulfur Illinois No. 5 coal, the pyritic sulfur content was reduced from 0.67% to 0.34% at a combustible recovery of 93.2%. The ash content was decreased from 27.6% to 5.84%, which equates to an organic efficiency of 95% according to gravity-based washability data. The separation performance achieved on a high sulfur Illinois No. 5 coal resulted in the rejection of 72.7% of the pyritic sulfur and 82.3% of the ash-forming material at a recovery of 8 1 %. Subsequent pulverization of the cleaned product and retreatment in a Falcon concentrator and Packed-Column resulted in overall circuit ash and pyritic sulfur rejections of 89% and 93%, respectively, which yielded a pyritic sulfur content reduction from 2.43% to 0.30%. This separation reduced the sulfur dioxide emission rating of an Illinois No. 5 coal from 6.21 to 1.75 lbs SO{sub 2}/MBTU, which is Phase I compliance coal. A comparison of the results obtained from the Floatex-Falcon-Jameson circuit with those of the existing circuit revealed that the novel fine coal circuit provides 10% to 20% improvement in mass yield to the concentrate while rejecting greater amounts of ash and pyritic sulfur.

  6. Practical applications of digital integrated circuits. Part 2: Minimization techniques, code conversion, flip-flops, and asynchronous circuits

    NASA Technical Reports Server (NTRS)

    1972-01-01

    Here, the 7400 line of transistor to transistor logic (TTL) devices is emphasized almost exclusively where hardware is concerned. However, it should be pointed out that the logic theory contained herein applies to all hardware. Binary numbers, simplification of logic circuits, code conversion circuits, basic flip-flop theory, details about series 54/7400, and asynchronous circuits are discussed.

  7. Enhancing and inhibiting stimulated Brillouin scattering in photonic integrated circuits

    PubMed Central

    Merklein, Moritz; Kabakova, Irina V.; Büttner, Thomas F. S.; Choi, Duk-Yong; Luther-Davies, Barry; Madden, Stephen J.; Eggleton, Benjamin J.

    2015-01-01

    On-chip nonlinear optics is a thriving research field, which creates transformative opportunities for manipulating classical or quantum signals in small-footprint integrated devices. Since the length scales are short, nonlinear interactions need to be enhanced by exploiting materials with large nonlinearity in combination with high-Q resonators or slow-light structures. This, however, often results in simultaneous enhancement of competing nonlinear processes, which limit the efficiency and can cause signal distortion. Here, we exploit the frequency dependence of the optical density-of-states near the edge of a photonic bandgap to selectively enhance or inhibit nonlinear interactions on a chip. We demonstrate this concept for one of the strongest nonlinear effects, stimulated Brillouin scattering using a narrow-band one-dimensional photonic bandgap structure: a Bragg grating. The stimulated Brillouin scattering enhancement enables the generation of a 15-line Brillouin frequency comb. In the inhibition case, we achieve stimulated Brillouin scattering free operation at a power level twice the threshold. PMID:25736909

  8. Enhancing and inhibiting stimulated Brillouin scattering in photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Merklein, Moritz; Kabakova, Irina V.; Büttner, Thomas F. S.; Choi, Duk-Yong; Luther-Davies, Barry; Madden, Stephen J.; Eggleton, Benjamin J.

    2015-03-01

    On-chip nonlinear optics is a thriving research field, which creates transformative opportunities for manipulating classical or quantum signals in small-footprint integrated devices. Since the length scales are short, nonlinear interactions need to be enhanced by exploiting materials with large nonlinearity in combination with high-Q resonators or slow-light structures. This, however, often results in simultaneous enhancement of competing nonlinear processes, which limit the efficiency and can cause signal distortion. Here, we exploit the frequency dependence of the optical density-of-states near the edge of a photonic bandgap to selectively enhance or inhibit nonlinear interactions on a chip. We demonstrate this concept for one of the strongest nonlinear effects, stimulated Brillouin scattering using a narrow-band one-dimensional photonic bandgap structure: a Bragg grating. The stimulated Brillouin scattering enhancement enables the generation of a 15-line Brillouin frequency comb. In the inhibition case, we achieve stimulated Brillouin scattering free operation at a power level twice the threshold.

  9. Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

    NASA Technical Reports Server (NTRS)

    Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

    2002-01-01

    We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

  10. Development of Advanced Tools for Cryogenic Integration

    NASA Astrophysics Data System (ADS)

    Bugby, D. C.; Marland, B. C.; Stouffer, C. J.; Kroliczek, E. J.

    2004-06-01

    This paper describes four advanced devices (or tools) that were developed to help solve problems in cryogenic integration. The four devices are: (1) an across-gimbal nitrogen cryogenic loop heat pipe (CLHP); (2) a miniaturized neon CLHP; (3) a differential thermal expansion (DTE) cryogenic thermal switch (CTSW); and (4) a dual-volume nitrogen cryogenic thermal storage unit (CTSU). The across-gimbal CLHP provides a low torque, high conductance solution for gimbaled cryogenic systems wishing to position their cryocoolers off-gimbal. The miniaturized CLHP combines thermal transport, flexibility, and thermal switching (at 35 K) into one device that can be directly mounted to both the cooler cold head and the cooled component. The DTE-CTSW, designed and successfully tested in a previous program using a stainless steel tube and beryllium (Be) end-pieces, was redesigned with a polymer rod and high-purity aluminum (Al) end-pieces to improve performance and manufacturability while still providing a miniaturized design. Lastly, the CTSU was designed with a 6063 Al heat exchanger and integrally welded, segmented, high purity Al thermal straps for direct attachment to both a cooler cold head and a Be component whose peak heat load exceeds its average load by 2.5 times. For each device, the paper will describe its development objective, operating principles, heritage, requirements, design, test data and lessons learned.

  11. Technology Advancement for Integrative Stem Cell Analyses

    PubMed Central

    Jeong, Yoon

    2014-01-01

    Scientists have endeavored to use stem cells for a variety of applications ranging from basic science research to translational medicine. Population-based characterization of such stem cells, while providing an important foundation to further development, often disregard the heterogeneity inherent among individual constituents within a given population. The population-based analysis and characterization of stem cells and the problems associated with such a blanket approach only underscore the need for the development of new analytical technology. In this article, we review current stem cell analytical technologies, along with the advantages and disadvantages of each, followed by applications of these technologies in the field of stem cells. Furthermore, while recent advances in micro/nano technology have led to a growth in the stem cell analytical field, underlying architectural concepts allow only for a vertical analytical approach, in which different desirable parameters are obtained from multiple individual experiments and there are many technical challenges that limit vertically integrated analytical tools. Therefore, we propose—by introducing a concept of vertical and horizontal approach—that there is the need of adequate methods to the integration of information, such that multiple descriptive parameters from a stem cell can be obtained from a single experiment. PMID:24874188

  12. Escherichia coli flagellar genes as target sites for integration and expression of genetic circuits.

    PubMed

    Juhas, Mario; Evans, Lewis D B; Frost, Joe; Davenport, Peter W; Yarkoni, Orr; Fraser, Gillian M; Ajioka, James W

    2014-01-01

    E. coli is a model platform for engineering microbes, so genetic circuit design and analysis will be greatly facilitated by simple and effective approaches to introduce genetic constructs into the E. coli chromosome at well-characterised loci. We combined the Red recombinase system of bacteriophage λ and Isothermal Gibson Assembly for rapid integration of novel DNA constructs into the E. coli chromosome. We identified the flagellar region as a promising region for integration and expression of genetic circuits. We characterised integration and expression at four candidate loci, fliD, fliS, fliT, and fliY, of the E. coli flagellar region 3a. The integration efficiency and expression from the four integrations varied considerably. Integration into fliD and fliS significantly decreased motility, while integration into fliT and fliY had only a minor effect on the motility. None of the integrations had negative effects on the growth of the bacteria. Overall, we found that fliT was the most suitable integration site. PMID:25350000

  13. Escherichia coli Flagellar Genes as Target Sites for Integration and Expression of Genetic Circuits

    PubMed Central

    Juhas, Mario; Evans, Lewis D. B.; Frost, Joe; Davenport, Peter W.; Yarkoni, Orr; Fraser, Gillian M.; Ajioka, James W.

    2014-01-01

    E. coli is a model platform for engineering microbes, so genetic circuit design and analysis will be greatly facilitated by simple and effective approaches to introduce genetic constructs into the E. coli chromosome at well-characterised loci. We combined the Red recombinase system of bacteriophage λ and Isothermal Gibson Assembly for rapid integration of novel DNA constructs into the E. coli chromosome. We identified the flagellar region as a promising region for integration and expression of genetic circuits. We characterised integration and expression at four candidate loci, fliD, fliS, fliT, and fliY, of the E. coli flagellar region 3a. The integration efficiency and expression from the four integrations varied considerably. Integration into fliD and fliS significantly decreased motility, while integration into fliT and fliY had only a minor effect on the motility. None of the integrations had negative effects on the growth of the bacteria. Overall, we found that fliT was the most suitable integration site. PMID:25350000

  14. Measurements of complex impedance in microwave high power systems with a new bluetooth integrated circuit.

    PubMed

    Roussy, Georges; Dichtel, Bernard; Chaabane, Haykel

    2003-01-01

    By using a new integrated circuit, which is marketed for bluetooth applications, it is possible to simplify the method of measuring the complex impedance, complex reflection coefficient and complex transmission coefficient in an industrial microwave setup. The Analog Devices circuit AD 8302, which measures gain and phase up to 2.7 GHz, operates with variable level input signals and is less sensitive to both amplitude and frequency fluctuations of the industrial magnetrons than are mixers and AM crystal detectors. Therefore, accurate gain and phase measurements can be performed with low stability generators. A mechanical setup with an AD 8302 is described; the calibration procedure and its performance are presented. PMID:15078067

  15. 4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

    NASA Technical Reports Server (NTRS)

    Spry, D. J.; Neudeck, P. G.; Chen, L.; Chang, C. W.; Lukco, D.; Beheim, G. M.

    2015-01-01

    Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 C) and 1150K (877 C) with successful electrical operation of all devices observed up to 1000K (727 C).

  16. Combined Self-Test of Analog Portion and ADCs in Integrated Mixed-Signal Circuits

    NASA Astrophysics Data System (ADS)

    Hu, Geng; Wang, Hong; Yang, Shiyuan

    Testing is a critical stage in integrated circuits production in order to guarantee reliability. The complexity and high integration level of mixed-signal ICs has put forward new challenges to circuit testing. This paper describes an oscillation-based combined self-test strategy for the analog portion and analog-to-digital converters (ADCs) in integrated mixed-signal circuits. In test mode, the analog portion under test is reconfigured into an oscillator, generating periodic signals as the test stimulus of ADC. By analyzing the A/D conversion results, a histogram test of ADC can be performed, and the oscillation frequency as well as amplitude can be checked, and in this way the oscillation test of the analog portion is realized simultaneously. For an analog benchmark circuit combined with an ADC, triangle oscillation and sinusoid oscillation schemes are both given to test their faults. Experimental results show that fault coverage of the analog portion is 92.2% and 94.3% in the two schemes respectively, and faults in the ADC can also be tested.

  17. Impact-Based Area Allocation for Yield Optimization in Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Abraham, Billion; Widodo, Arif; Chen, Poki

    2016-06-01

    In analog integrated circuit (IC) layout, area allocation is a very important issue for achieving good mismatch cancellation. However, most IC layout papers focus only on layout strategy to reduce systematic mismatch. In 2006, an outstanding paper presenting area allocation strategy was published to introduce technique for random mismatch reduction. Instead of using general theoretical study to prove the strategy, this research presented close-to-optimum simulations only on case-bycase basis. The impact-based area allocation for yield optimization in integrated circuits is proposed in this chapter. To demonstrate the corresponding strategy, not only a theoretical analysis but also an integral nonlinearity-based yield simulation will be given to derive optimum area allocation for binary weighted current steering digital-to-analog converter (DAC). The result will be concluded to convince IC designers how to allocate area for critical devices in an optimum way.

  18. A 330-500 GHz Zero-Biased Broadband Tripler Based on Terahertz Monolithic Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Ren, Tian-Hao; Zhang, Yong; Yan, Bo; Xu, Rui-Min; Yang, Cheng-Yue; Zhou, Jing-Tao; Jin, Zhi

    2015-02-01

    A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194 μW at 348 GHz. The saturation characteristic test shows that the output 1 dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.

  19. The simulation of a readout integrated circuit with high dynamic range for long wave infrared FPA

    NASA Astrophysics Data System (ADS)

    Zhai, Yongcheng; Ding, Rui-jun; Chen, Guo-qiang; Wang, Pan; Hao, Li-chao

    2013-12-01

    This paper describes the simulation results of a high performance readout integrated circuit (ROIC) designed for long wave infrared (LWIR) detectors, which has high dynamic range (HDR). A special architecture is used to the input unit cell to accommodate the wide scene dynamic range requirement, thus providing over a factor of 70dB dynamic range. A capacitive feedback transimpedance amplifier (CTIA) provides a low noise detector interface circuit capable of operating at low input currents and a folded cascade amplifier with a gain of 73dB is designed. A 6.4pF integration capacitor is used for supporting a wide scene dynamic range, which can store 80Me. Because of the restriction of the layout area, four unit cells will share an integration capacitor. A sample and hold capacitor is also part of the input unit cell architecture, which allows the infrared focal plane arrays (IRFPA) to be operated in full frame snapshot mode and provides the maximum integration time available. The integration time is electronically controlled by an external clock pulse. The simulation results show that the circuit works well under 5V power supply and the nonlinearity is calculated less than 0.1%. The total power dissipation is less than 150mW.

  20. Modeling and simulation of vertically integrated resonant tunneling diode based high-speed circuits

    NASA Astrophysics Data System (ADS)

    Kuo, Tai-Haur

    1993-01-01

    An equivalent circuit is developed for a single-well resonant-tunneling diode (RTD). Based on this equivalent circuit, the current-voltage (I-V) characteristics of vertically integrated resonant tunneling diodes (VID) are analyzed, assuming each RTD is quantum mechanically isolated from the others. By using a piecewise linear technique, the I-V curve of the multipeaked VID is divided into several regions, and the model of each region is developed and simplified individually. By incorporating the switch model of SPICE, the individual models are combined to form a complete VID model so that the VID model can be used with the SPICE circuit simulation program. The simulated result of a four-bit VID-based A/D converter using this model is shown.

  1. Towards scalable networks of solid-state quantum memories in a photonic integrated circuit (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Englund, Dirk R.

    2015-09-01

    A central goal of quantum information science is the entanglement of multiple quantum memories that can be individually controlled. Here, we discuss progress towards photonic integrated circuits designed to enable efficient optical interactions between multiple spin qubits in nitrogen vacancy (NV) centers in diamond. We describe NV-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 μs implantation of NVs with nanometer-scale apertures, including into cavity field maxima; hybrid on-chip networks for integration of multiple functional NV-cavity systems; and scalable integration of superconducting nanowire single photon detectors on-chip.

  2. A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA

    NASA Astrophysics Data System (ADS)

    Saxena, Raghvendra Sahai; Saini, Navneet Kaur; Bhan, R. K.; Sharma, R. K.

    2014-11-01

    We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe photodiode separately. We also connected a resistor in parallel with them to represent the ohmic shunt and a constant current source to represent photocurrent. We show that by adjusting the parameters in standard diode models and the resistor and current values, we could actually fit the measured data of our various HgCdTe photodiodes having different characteristics. This is a very efficient model that can be used for simulation of readout integrated circuit (ROIC) for HgCdTe IR photodiode arrays. This model also allows circuit level Monte Carlo simulation on a complete IRFPA at a single circuit simulator platform to estimate the non-uniformity for given processes of HgCdTe device fabrication and Si ROIC fabrication.

  3. Integrating advanced facades into high performance buildings

    SciTech Connect

    Selkowitz, Stephen E.

    2001-05-01

    Glass is a remarkable material but its functionality is significantly enhanced when it is processed or altered to provide added intrinsic capabilities. The overall performance of glass elements in a building can be further enhanced when they are designed to be part of a complete facade system. Finally the facade system delivers the greatest performance to the building owner and occupants when it becomes an essential element of a fully integrated building design. This presentation examines the growing interest in incorporating advanced glazing elements into more comprehensive facade and building systems in a manner that increases comfort, productivity and amenity for occupants, reduces operating costs for building owners, and contributes to improving the health of the planet by reducing overall energy use and negative environmental impacts. We explore the role of glazing systems in dynamic and responsive facades that provide the following functionality: Enhanced sun protection and cooling load control while improving thermal comfort and providing most of the light needed with daylighting; Enhanced air quality and reduced cooling loads using natural ventilation schemes employing the facade as an active air control element; Reduced operating costs by minimizing lighting, cooling and heating energy use by optimizing the daylighting-thermal tradeoffs; Net positive contributions to the energy balance of the building using integrated photovoltaic systems; Improved indoor environments leading to enhanced occupant health, comfort and performance. In addressing these issues facade system solutions must, of course, respect the constraints of latitude, location, solar orientation, acoustics, earthquake and fire safety, etc. Since climate and occupant needs are dynamic variables, in a high performance building the facade solution have the capacity to respond and adapt to these variable exterior conditions and to changing occupant needs. This responsive performance capability

  4. Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits.

    PubMed

    Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon

    2016-06-22

    We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals. PMID:27250997

  5. Monolithically fabricated germanium-on-SOI photodetector and Si CMOS circuit for integrated photonic applications

    NASA Astrophysics Data System (ADS)

    Ang, Kah-Wee; Liow, Tsung-Yang; Yu, Ming-Bin; Fang, Qing; Song, Junfeng; Lo, Guo Q.; Kwong, Dim-Lee

    2010-05-01

    In this paper, we report our design and fabrication approach towards realizing a monolithic integration of Ge photodetector and Si CMOS circuits on common SOI platform for integrated photonic applications. The approach, based on the Ge-on-SOI technology, enables the realization of high sensitivity and low noise photodetector that is capable of performing efficient optical-to-electrical encoding in the near-infrared wavelengths regime. When operated at a bias of -1.0V, a vertical PIN detector achieved a lower Idark of ~0.57μA as compared to a lateral PIN detector, a value that is below the typical ~1μA upper limit acceptable for high speed receiver design. Very high responsivity of ~0.92A/W was obtained in both detector designs for a wavelength of 1550nm, which corresponds to a quantum efficiency of ~73%. Impulse response measurements showed that a vertical PIN photodetector gives rise to a smaller FWHM of ~24.4ps, which corresponds to a -3dB bandwidth of ~11.3GHz where RC time delay is known to be the dominant factor limiting the speed performance. Eye patterns (PRBS 27-1) measurement further confirms the achievement of high speed and low noise photodetection at a bit-rate of 8.5Gb/s. In addition, we evaluate the DC characteristics of the monolithically fabricated Si CMOS inverter circuit. Excellent transfer and output characteristics were achieved by the integrated CMOS inverter circuits in addition to the well behaved logic functions. We also assess the impact of the additional thermal budget introduced by the Ge epitaxy growth on the threshold voltage variation of the short channel CMOS transistors and discuss the issues and potential for the seamless integration of electronic and photonic integrated circuits.

  6. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

    PubMed

    Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

    2016-08-10

    Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V. PMID:27459084

  7. Photonic crystal ring resonator based optical filters for photonic integrated circuits

    SciTech Connect

    Robinson, S.

    2014-10-15

    In this paper, a two Dimensional (2D) Photonic Crystal Ring Resonator (PCRR) based optical Filters namely Add Drop Filter, Bandpass Filter, and Bandstop Filter are designed for Photonic Integrated Circuits (PICs). The normalized output response of the filters is obtained using 2D Finite Difference Time Domain (FDTD) method and the band diagram of periodic and non-periodic structure is attained by Plane Wave Expansion (PWE) method. The size of the device is minimized from a scale of few tens of millimeters to the order of micrometers. The overall size of the filters is around 11.4 μm × 11.4 μm which is highly suitable of photonic integrated circuits.

  8. Integrated circuit package with lead structure and method of preparing the same

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W. (Inventor)

    1973-01-01

    A beam-lead integrated circuit package assembly including a beam-lead integrated circuit chip, a lead frame array bonded to projecting fingers of the chip, a rubber potting compound disposed around the chip, and an encapsulating molded plastic is described. The lead frame array is prepared by photographically printing a lead pattern on a base metal sheet, selectively etching to remove metal between leads, and plating with gold. Joining of the chip to the lead frame array is carried out by thermocompression bonding of mating goldplated surfaces. A small amount of silicone rubber is then applied to cover the chip and bonded joints, and the package is encapsulated with epoxy resin, applied by molding.

  9. Heavy-ion induced single-event upset in integrated circuits

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.

    1991-01-01

    The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

  10. Design and characterization of integrated components for SiN photonic quantum circuits.

    PubMed

    Poot, Menno; Schuck, Carsten; Ma, Xiao-Song; Guo, Xiang; Tang, Hong X

    2016-04-01

    The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations. PMID:27136982

  11. Design and characterization of integrated components for SiN photonic quantum circuits

    NASA Astrophysics Data System (ADS)

    Poot, Menno; Schuck, Carsten; Ma, Xiao-song; Guo, Xiang; Tang, Hong X.

    2016-04-01

    The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations.

  12. Towards Photonic-Plasmonic Integrated Circuits: Study and Fabrication Of Electrically-Pumped Plasmonic Nano-Laser

    NASA Astrophysics Data System (ADS)

    Hseih, Chunhan Michael

    For the next generation of optical communication, Photonic Integrated Circuits (PIC) and optoelectronic integrated circuits has been of great interest because of the possibility of integrating multiple optical components and electronics together to give high performance opto-electronic system on a small chip that can be produced cost-effectively. Integrated semiconductor laser, as the main light source for generating signals in optical communications, is one of the most important function on a photonic integrated circuit. In the recent advancements in nanophotonics, strong confinement of light in strongly-guiding optical waveguide structure comparing to conventional structures, has been used to improve certain performances of on-chip semiconductor lasers and miniaturize the laser device sizes. However, compared to electronics, even with use of nanophotonic device technology, optoelectronic device footprints are still relatively large due to the diffraction limit of light, which poses a limit on the sizes of optoelectronic devices. Plasmonic photonic device area has been an intensive field of research that utilizes plamonic photonic waveguides to confine light smaller than the diffraction limit through the effect of surface plasmon polariton, a coupling between photons and plasmon along a metal-dielectric interface. In this dissertation, an electrically pumped Plasmonic nanolaser has been designed using 2D-FDTD simulation. The nanolaser has the potential of lasing utilizing achievable optical gain in the typical compound (group III-V) semiconductor materials. The laser electrical pumping structure is compatible with device integration on silicon photonics platform utilizing silicon-on-insulator (SOI) substrate. Electrically pumped thin film based laser structure is shown to be realizable with the use of TCO material as transparent electrodes on the waveguide cladding. Indium oxide (In2O3) and Zinc-Indium-Tin-Oxide (ZITO) deposited by ion-beam-assisted deposition

  13. Tolerant polarization converter for InGaAsP-InP photonic integrated circuits.

    PubMed

    Dzibrou, Dzmitry O; van der Tol, Jos J G M; Smit, Meint K

    2013-09-15

    We report the fabrication and characterization of a new polarization converter for InGaAsP-InP photonic integrated circuits. The converter consists of two right trapezoidal sections with the angled sidewalls etched wetly. The converters show a greatly improved tolerance to variations of the fabrication, an averaged efficiency of polarization conversion of 99.8% and a loss of about 0.7 dB at a wavelength of 1.535 μm. PMID:24104793

  14. Protecting integrated circuits from excessive charge accumulation during plasma cleaning of multichip modules

    SciTech Connect

    Rodenbeck, Christopher T; Girardi, Michael

    2015-04-21

    Internal nodes of a constituent integrated circuit (IC) package of a multichip module (MCM) are protected from excessive charge during plasma cleaning of the MCM. The protected nodes are coupled to an internal common node of the IC package by respectively associated discharge paths. The common node is connected to a bond pad of the IC package. During MCM assembly, and before plasma cleaning, this bond pad receives a wire bond to a ground bond pad on the MCM substrate.

  15. Molten-Caustic-Leaching (Gravimelt) System Integration Project, Phase 2. Topical report for test circuit operation

    SciTech Connect

    Not Available

    1993-02-01

    The objective of the task (Task 6) covered in this document was to operate the refurbished/modified test circuit of the Gravimeh Process in a continuous integrated manner to obtain the engineering and operational data necessary to assess the technical performance and reliability of the circuit. This data is critical to the development of this technology as a feasible means of producing premium clean burning fuels that meet New Source Performance Standards (NSPS). Significant refurbishments and design modifications had been made to the facility (in particular to the vacuum filtration and evaporation units) during Tasks 1 and 2, followed by off-line testing (Task 3). Two weeks of continuous around-the-clock operation of the refurbished/modified MCL test circuit were performed. During the second week of testing, all sections of the plant were operated in an integrated fashion for an extended period of time, including a substantial number of hours of on-stream time for the vacuum filters and the caustic evaporation unit. A new process configuration was tested in which centrate from the acid wash train (without acid addition) was used as the water makeup for the water wash train, thus-eliminating the one remaining process waste water stream. A 9-inch centrifuge was tested at various solids loadings and at flow rates up to 400 lbs/hr of coal feed to obtain a twenty-fold scaleup factor over the MCL integrated test facility centrifuge performance data.

  16. Laser-assisted chemical vapor deposition of nickel and laser cutting in integrated circuit restructuring

    NASA Astrophysics Data System (ADS)

    Remes, J.; Moilanen, H.; Leppävuori, S.

    1997-01-01

    Laser-assisted chemical vapor deposition (LCVD) of nickel from Ni(CO)4 has been utilised for the restructuring of integrated circuit (IC) interconnections. Nickel lines were deposited on a SiO2 passivated IC to achieve new local interconnections between integrated circuit structures. Depositions were carried out over the pressure range of 0.2 to 2.2 mbar of pure Ni(CO)4 buffered in 0 to 800 mbar He. Argon ion laser wavelengths of 488 and 514.5 nm, laser power of 50-150 mW and a laser scan speed of 80 μm/s were utilised for the deposition. The morphology and chemical contents of the deposited interconnection microstructures was examined by AFM, optical microscopy and LIMA. The resistivity of the deposited lines was found to be close to the nickel bulk resistivity. The utilisation of Nd: YAG and XeCl excimer lasers in the cutting of Al and Mo conductor lines for integrated circuit modification is also described.

  17. Self-contained sub-millimeter wave rectifying antenna integrated circuit

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H. (Inventor)

    2004-01-01

    The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

  18. Advanced Power Electronics for LED Drivers: Advanced Technologies for integrated Power Electronics

    SciTech Connect

    2010-09-01

    ADEPT Project: MIT is teaming with Georgia Institute of Technology, Dartmouth College, and the University of Pennsylvania (UPenn) to create more efficient power circuits for energy-efficient light-emitting diodes (LEDs) through advances in 3 related areas. First, the team is using semiconductors made of high-performing gallium nitride grown on a low-cost silicon base (GaN-on-Si). These GaN-on-Si semiconductors conduct electricity more efficiently than traditional silicon semiconductors. Second, the team is developing new magnetic materials and structures to reduce the size and increase the efficiency of an important LED power component, the inductor. This advancement is important because magnetics are the largest and most expensive part of a circuit. Finally, the team is creating an entirely new circuit design to optimize the performance of the new semiconductors and magnetic devices it is using.

  19. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    PubMed

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies. PMID:26779680

  20. Hot spot analysis in integrated circuit substrates by laser mirage effect

    NASA Astrophysics Data System (ADS)

    Perpiñà, X.; Jordà, X.; Vellvehi, M.; Altet, J.

    2011-04-01

    This work shows an analytical and experimental technique for characterizing radial heat flow present in integrated circuits (ICs) when power is dissipated by integrated devices. The analytical model comes from the resolution of the Fermat equation for the trajectory of rays and supposing a spherical heat source dissipating a time-periodic power. An application example is presented; hence demonstrating how hot spots and heat transfer phenomena in the IC substrate can be characterized. The developed method may become a practical alternative to usual off-chip techniques for inspecting hot spots in ICs and to experimentally characterize heat flow in the semiconductor substrate.

  1. Terahertz applications of integrated circuits based on intrinsic Josephson junctions in high Tc superconductors

    NASA Astrophysics Data System (ADS)

    Wang, Huabing; Wu, Peiheng; Yamashita, Tsutomu

    2001-10-01

    Using a newly developed double-side fabrication method, an IJJ stack plus a bow-tie antenna and chokes were integrated in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x (BSCCO) single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. In addition to this method, which can be used to fabricate integrated circuits based on intrinsic Josephson junctions in high temperature (Tc) superconductors, also reported will be terahertz responses of IJJs, and the possible applications in quantum voltage standard, spectroscopy, and so on.

  2. Photonic Integrated Circuits Based on Plasmonics and Quantum Dot Materials: Properties, Compensation of Optical Losses and Applications

    NASA Astrophysics Data System (ADS)

    Thylen, Lars

    2010-03-01

    Nanophotonics and plasmonics have received much attention recently, fuelled by a general interest in nanotechnology but also by rapid advances in integrated photonics, mainly brought about by using silicon, with larger refractive index difference than previously employed [L. Thylen et al, J. Zhejiang Univ. SCIENCE 2006 7(12)]. Plasmonics offers a possibility for devices with field sizes much smaller than the wavelength of light in aa host medium. But the tighter the field confinement, the greater are generally the optical losses, determined by the imaginary part of epsilon. This remains a critical issue. Dissipative losses impede the ubiquitous usefulness of nanophotonics light wave circuits. Recently, optical gain in quantum dots for reducing or compensate losses was analyzed [A Bratkovsky et al, Applied Physics Letters 93, 193106 (2008)]. However, the concomitant effects of the high (but not unreachable) gain required for this are high power dissipation and signal to noise ratio degradation. Power dissipation is primarily due to the losses of the metal structures and Auger recombination in the quantum dots. A general and square chip size independent expression for the information capacity of a lossless (by amplification) plasmonic chip is given, using the allowed values for integrated electronics power dissipation. In conclusion, with amplification and with current understanding, it appears possible to sizewise come close to CMOS dimensions for isolated integrated photonic devices, but not in integration density. This is due to power dissipation in currently employed negative epsilon materials.

  3. Modular integration of electronics and microfluidic systems using flexible printed circuit boards.

    PubMed

    Wu, Amy; Wang, Lisen; Jensen, Erik; Mathies, Richard; Boser, Bernhard

    2010-02-21

    Microfluidic systems offer an attractive alternative to conventional wet chemical methods with benefits including reduced sample and reagent volumes, shorter reaction times, high-throughput, automation, and low cost. However, most present microfluidic systems rely on external means to analyze reaction products. This substantially adds to the size, complexity, and cost of the overall system. Electronic detection based on sub-millimetre size integrated circuits (ICs) has been demonstrated for a wide range of targets including nucleic and amino acids, but deployment of this technology to date has been limited due to the lack of a flexible process to integrate these chips within microfluidic devices. This paper presents a modular and inexpensive process to integrate ICs with microfluidic systems based on standard printed circuit board (PCB) technology to assemble the independently designed microfluidic and electronic components. The integrated system can accommodate multiple chips of different sizes bonded to glass or PDMS microfluidic systems. Since IC chips and flex PCB manufacturing and assembly are industry standards with low cost, the integrated system is economical for both laboratory and point-of-care settings. PMID:20126694

  4. Analog integrated circuits for the Lotka-Volterra competitive neural networks.

    PubMed

    Asai, T; Ohtani, M; Yonezu, H

    1999-01-01

    A subthreshold MOS integrated circuit (IC) is designed and fabricated for implementing a competitive neural network of the Lotka-Volterra (LV) type which is derived from conventional membrane dynamics of neurons and is used for the selection of external inputs. The steady-state solutions to the LV equation can be classified into three types, each of which represents qualitatively different selection behavior. Among the solutions, the winners-share-all (WSA) solution in which a certain number of neurons remain activated in steady states is particularly useful owing to robustness in the selection of inputs from a noisy environment. The measured results of the fabricated LV IC's agree well with the theoretical prediction as long as the influence of device mismatches is small. Furthermore, results of extensive circuit simulations prove that the large-scale LV circuit producing the WSA solution does exhibit a reliable selection compared with winner-take-all circuits, in the possible presence of device mismatches. PMID:18252623

  5. Integrated optical circuits in fiber cladding by tightly focused femtosecond laser writing

    NASA Astrophysics Data System (ADS)

    Maselli, Valeria; Herman, Peter R.

    2010-02-01

    Femtosecond laser direct writing in glass materials represents a simple single-step approach to generate threedimensional (3D) optical circuits that cannot be constructed with traditional fabrication techniques. In this paper, we present an attractive extension of such femtosecond laser processing to the writing of optical circuits directly inside the cladding of single-mode optical fiber. To enable the formation of strongly guided and undistorted waveguide modes within the small cylindrical fused silica volume (125 μm diameter), frequency-doubled (λ = 522 nm) Ytterbium fiber-amplified femtosecond laser light at high repetition rate (500 kHz) was tightly focused with a high 1.25 numerical aperture (NA) oil immersion lens. In this way, low-loss waveguides could be arbitrarily located in various cladding positions without generating ablation damage. Basic components such as directional couplers were demonstrated that present a new means for dense integration of optical elements that couple with the nearby fiber core. Such 3D all-fiber optical circuits represent practical tools to bypass tedious assembly and packaging steps such as fiber pigtailing with planar lightwave components. This formation of optical circuits directly within the cladding of optical fiber opens new prospects for manufacturing compact and functional optical and optofluidic microsystems for Telecom, sensing and lab-on-a fiber applications.

  6. Design, Fabrication and Integration of a NaK-Cooled Circuit

    NASA Technical Reports Server (NTRS)

    Garber, Anne; Godfroy, Thomas

    2006-01-01

    The Early Flight Fission Test Facilities (EFF-TF) team has been tasked by the NASA Marshall Space Flight Center Nuclear Systems Office to design, fabricate, and test an actively pumped alkali metal flow circuit. The system, which was originally designed for use with a eutectic mixture of sodium potassium (NaK), was redesigned to for use with lithium. Due to a shi$ in focus, it is once again being prepared for use with NaK. Changes made to the actively pumped, high temperature circuit include the replacement of the expansion reservoir, addition of remotely operated valves, and modification of the support table. Basic circuit components include: reactor segment, NaK to gas heat exchanger, electromagnetic (EM) liquid metal pump, load/drain reservoir, expansion reservoir, instrumentation, and a spill reservoir. A 37-pin partial-array core (pin and flow path dimensions are the same as those in a fill design) was selected for fabrication and test. This paper summarizes the integration and preparations for the fill of the pumped liquid metal NaK flow circuit.

  7. Fabrication-process-induced variations of Nb/Al/AlOx/Nb Josephson junctions in superconductor integrated circuits

    NASA Astrophysics Data System (ADS)

    Tolpygo, Sergey K.; Amparo, Denis

    2010-03-01

    Currently, superconductor digital integrated circuits fabricated at HYPRES, Inc. can operate at clock frequencies approaching 40 GHz. The circuits present multilayered structures containing tens of thousands of Nb/Al/AlOx/Nb Josephson junctions (JJs) of various sizes interconnected by four Nb wiring layers, resistors, and other circuit elements. In order to be fully operational, the integrated circuits should be fabricated such that the critical currents of the JJs are within the tight design margins and the proper relationships between the critical currents of JJs of different sizes are preserved. We present experimental data and discuss mechanisms of process-induced variations of the critical current and energy gap of Nb/Al/AlOx/Nb JJs in integrated circuits. We demonstrate that the Josephson critical current may depend on the type and area of circuit elements connected to the junction, on the circuit pattern, and on the step in the fabrication process at which the connection is made. In particular, we discuss the influence of (a) the junction base electrode connection to the ground plane, (b) the junction counter electrode connection to the ground plane, and (c) the counter electrode connection to the Ti/Au or Ti/Pd/Au contact pads by Nb wiring. We show that the process-induced changes of the properties of Nb/Al/AlOx/Nb junctions are caused by migration of impurity atoms (hydrogen) between the different layers comprising the integrated circuits.

  8. Erbium-doped zinc-oxide waveguide amplifiers for hybrid photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    O'Neal, Lawrence; Anthony, Deion; Bonner, Carl; Geddis, Demetris

    2016-02-01

    CMOS logic circuits have entered the sub-100nm regime, and research is on-going to investigate the quantum effects that are apparent at this dimension. To avoid some of the constraints imposed by fabrication, entropy, energy, and interference considerations for nano-scale devices, many have begun designing hybrid and/or photonic integrated circuits. These circuits consist of transistors, light emitters, photodetectors, and electrical and optical waveguides. As attenuation is a limiting factor in any communications system, it is advantageous to integrate a signal amplifier. There are numerous examples of electrical amplifiers, but in order to take advantage of the benefits provided by optically integrated systems, optical amplifiers are necessary. The erbium doped fiber amplifier is an example of an optical amplifier which is commercially available now, but the distance between the amplifier and the device benefitting from amplification can be decreased and provide greater functionality by providing local, on-chip amplification. Zinc oxide is an attractive material due to its electrical and optical properties. Its wide bandgap (≍3.4 eV) and high refractive index (≍2) make it an excellent choice for integrated optics systems. Moreover, erbium doped zinc oxide (Er:ZnO) is a suitable candidate for optical waveguide amplifiers because of its compatibility with semiconductor processing technology, 1.54 μm luminescence, transparency, low resistivity, and amplification characteristics. This research presents the characterization of radio frequency magnetron sputtered Er:ZnO, the design and fabrication of integrated waveguide amplifiers, and device analysis.

  9. Flexible packaging of solid-state integrated circuit chips with elastomeric microfluidics

    NASA Astrophysics Data System (ADS)

    Zhang, Bowei; Dong, Quan; Korman, Can E.; Li, Zhenyu; Zaghloul, Mona E.

    2013-01-01

    A flexible technology is proposed to integrate smart electronics and microfluidics all embedded in an elastomer package. The microfluidic channels are used to deliver both liquid samples and liquid metals to the integrated circuits (ICs). The liquid metals are used to realize electrical interconnects to the IC chip. This avoids the traditional IC packaging challenges, such as wire-bonding and flip-chip bonding, which are not compatible with current microfluidic technologies. As a demonstration we integrated a CMOS magnetic sensor chip and associate microfluidic channels on a polydimethylsiloxane (PDMS) substrate that allows precise delivery of small liquid samples to the sensor. Furthermore, the packaged system is fully functional under bending curvature radius of one centimetre and uniaxial strain of 15%. The flexible integration of solid-state ICs with microfluidics enables compact flexible electronic and lab-on-a-chip systems, which hold great potential for wearable health monitoring, point-of-care diagnostics and environmental sensing among many other applications.

  10. Development of a universal serial bus interface circuit for ion beam current integrators.

    PubMed

    Suresh, K; Panigrahi, B K; Nair, K G M

    2007-08-01

    A universal serial bus (USB) interface circuit has been developed to enable easy interfacing of commercial as well as custom-built ion beam current integrators to personal computer (PC) based automated experimental setups. Built using the popular PIC16F877A reduced instruction set computer and a USB-universal asynchronous receiver-transmitter/first in, first out controller, DLP2232, this USB interface circuit virtually emulates the ion beam current integrators on a host PC and uses USB 2.0 protocol to implement high speed bidirectional data transfer. Using this interface, many tedious and labor intensive ion beam irradiation and characterization experiments can be redesigned into PC based automated ones with advantages of improved accuracy, rapidity, and ease of use and control. This interface circuit was successfully used in carrying out online in situ resistivity measurement of 70 keV O(+) ion irradiated tin thin films using four probe method. In situ electrical resistance measurement showed the formation of SnO(2) phase during ion implantation. PMID:17764373

  11. A contact lens with integrated telecommunication circuit and sensors for wireless and continuous tear glucose monitoring

    NASA Astrophysics Data System (ADS)

    Yao, H.; Liao, Y.; Lingley, A. R.; Afanasiev, A.; Lähdesmäki, I.; Otis, B. P.; Parviz, B. A.

    2012-07-01

    We present an integrated functional contact lens, composed of a differential glucose sensor module, metal interconnects, sensor read-out circuit, antenna and telecommunication circuit, to monitor tear glucose levels wirelessly, continuously and non-invasively. The electrochemical differential sensor module is based on immobilization of activated and de-activated glucose oxidase. We characterized the sensor on a model polymer eye and determined that it showed good repeatability, molecular interference rejection and linearity in the range of 0-2 mM glucose, covering normal tear glucose concentrations (0.1-0.6 mM). We also report the temperature, ageing and protein-fouling sensitivity of the sensor. We report the design and implementation of a low-power (3 µW) sensor read-out and telecommunication circuit to deliver wireless power and transmit data for the sensor module. Using this small chip (0.36 mm2), we produced an integrated contact lens with sensors and demonstrated wireless operation of the system and glucose read-out over the distance of several centimeters.

  12. SiGe Integrated Circuit/SQUID Hybrid Cryogenic Multiplexer for Superconducting Bolometer Array

    NASA Astrophysics Data System (ADS)

    Prêle, D.; Voisin, F.; Oger, R.; Chapron, C.; Bréelle, E.; Piat, M.

    2009-12-01

    The development of large superconducting bolometer (Transition Edge Sensor: TES) arrays requires ultra low noise amplification and multiplexing electronics. The use of a first transducer stage such as a SQUID (Superconducting QUantum Interference Device) allows ultimate performance in terms of noise. However, the linearization of the SQUID characteristic requires low noise amplification. Furthermore, to realize a time domain multiplexer with SQUIDs, switched biasing is also needed. We have designed an Integrated Circuit (IC) in standard BiCMOS SiGe technology for the readout and the control of a SQUID multiplexer. It includes a low noise amplifier with multiplexed inputs, switched current sources for SQUIDs, and digital circuit for the addressing with only one room temperature clock signal. We have successfully tested this integrated circuit down to 2 K. To validate the operation of a SQUID multiplexer controlled by this SiGe cryogenic IC, we have developed a 2×2 SQUID hybrid demonstrator. It consists of four commercial SQUIDs connected to a SiGe IC.

  13. PCSIM: A Parallel Simulation Environment for Neural Circuits Fully Integrated with Python

    PubMed Central

    Pecevski, Dejan; Natschläger, Thomas; Schuch, Klaus

    2008-01-01

    The Parallel Circuit SIMulator (PCSIM) is a software package for simulation of neural circuits. It is primarily designed for distributed simulation of large scale networks of spiking point neurons. Although its computational core is written in C++, PCSIM's primary interface is implemented in the Python programming language, which is a powerful programming environment and allows the user to easily integrate the neural circuit simulator with data analysis and visualization tools to manage the full neural modeling life cycle. The main focus of this paper is to describe PCSIM's full integration into Python and the benefits thereof. In particular we will investigate how the automatically generated bidirectional interface and PCSIM's object-oriented modular framework enable the user to adopt a hybrid modeling approach: using and extending PCSIM's functionality either employing pure Python or C++ and thus combining the advantages of both worlds. Furthermore, we describe several supplementary PCSIM packages written in pure Python and tailored towards setting up and analyzing neural simulations. PMID:19543450

  14. Structure of the EGF receptor transactivation circuit integrates multiple signals with cell context

    SciTech Connect

    Joslin, Elizabeth J.; Shankaran, Harish; Opresko, Lee K.; Bollinger, Nikki; Lauffenburger, Douglas A.; Wiley, H. S.

    2010-05-10

    Transactivation of the epidermal growth factor receptor (EGFR) has been proposed to be a mechanism by which a variety of cellular inputs can be integrated into a single signaling pathway, but the regulatory topology of this important system is unclear. To understand the transactivation circuit, we first created a “non-binding” reporter for ligand shedding. We then quantitatively defined how signals from multiple agonists were integrated both upstream and downstream of the EGFR into the extracellular signal regulated kinase (ERK) cascade in human mammary epithelial cells. We found that transactivation is mediated by a recursive autocrine circuit where ligand shedding drives EGFR-stimulated ERK that in turn drives further ligand shedding. The time from shedding to ERK activation is fast (<5 min) whereas the recursive feedback is slow (>15 min). Simulations showed that this delay in positive feedback greatly enhanced system stability and robustness. Our results indicate that the transactivation circuit is constructed so that the magnitude of ERK signaling is governed by the sum of multiple direct inputs, while recursive, autocrine ligand shedding controls signal duration.

  15. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  16. Numerical Study on Crossflow Printed Circuit Heat Exchanger for Advanced Small Modular Reactors

    SciTech Connect

    Yoon, Su-Jong; Sabharwall, Piyush; Kim, Eung-Soo

    2014-03-01

    Various fluids such as water, gases (helium), molten salts (FLiNaK, FLiBe) and liquid metal (sodium) are used as a coolant of advanced small modular reactors (SMRs). The printed circuit heat exchanger (PCHE) has been adopted as the intermediate and/or secondary heat exchanger of SMR systems because this heat exchanger is compact and effective. The size and cost of PCHE can be changed by the coolant type of each SMR. In this study, the crossflow PCHE analysis code for advanced small modular reactor has been developed for the thermal design and cost estimation of the heat exchanger. The analytical solution of single pass, both unmixed fluids crossflow heat exchanger model was employed to calculate a two dimensional temperature profile of a crossflow PCHE. The analytical solution of crossflow heat exchanger was simply implemented by using built in function of the MATLAB program. The effect of fluid property uncertainty on the calculation results was evaluated. In addition, the effect of heat transfer correlations on the calculated temperature profile was analyzed by taking into account possible combinations of primary and secondary coolants in the SMR systems. Size and cost of heat exchanger were evaluated for the given temperature requirement of each SMR.

  17. Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

    PubMed Central

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2014-01-01

    Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits. PMID:24463956

  18. Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires

    NASA Astrophysics Data System (ADS)

    Lauvernier, D.; Garidel, S.; Zegaoui, M.; Vilcot, J. P.; Harari, J.; Magnin, V.; Decoster, D.

    2007-04-01

    We demonstrated the potential application of III-V/polymer nanowires for photonic integrated circuits in a previous paper. Hereby, we report the use of a spot size converter based on 2D reverse nanotaper structure in order to improve the coupling efficiency between the nanowire and optical fiber. A total coupling enhancement of up to a factor 60 has been measured from an 80 nm × 300 nm cross-section tip which feeds an 300 nm-side square nanowire at its both ends. Simultaneously, micro-radius bends have been fabricated to increase the circuit density; for a radius of 5 µm, the 90º bend losses were measured as low as 0.60 dB and 0.80 dB for TE and TM polarizations respectively.

  19. Grounding positions of superconducting layer for effective magnetic isolation in Josephson integrated circuits

    NASA Astrophysics Data System (ADS)

    Mizugaki, Yoshinao; Kashiwa, Ryuta; Moriya, Masataka; Usami, Kouichi; Kobayashi, Tadayuki

    2007-06-01

    Mutual inductances between two superconducting strip lines coupled through a grounded shield layer are evaluated by both experiments and numerical calculation. A conventional superconducting quantum interference device method on a Nb Josephson integrated circuit chip is employed for experiments. Four test circuits are designed to investigate the effects of ground contacts. Grounding the shield layer at one point or at two points located perpendicular to the line direction does not improve the shielding effect, whereas grounding at two points located parallel to the line direction reduced the mutual inductance by 67%. Mutual inductances calculated using an inductance extraction program, FASTHENRY, agree with the experimental results. Numerical results of current distributions in the shield layers demonstrate that the enhanced shielding current improves the magnetic isolation.

  20. Fiber optic gyroscope using an eight-component LiNbO3 integrated optic circuit

    NASA Technical Reports Server (NTRS)

    Minford, W. J.; Stone, F. T.; Youmans, B. R.; Bartman, R. K.

    1990-01-01

    A LiNbO3 integrated optic circuit (IOC) containing eight optical functions has been successfully incorporated into an interferometric fiber optic gyroscope. The IOC has the minimum configuration optical functions (a phase modulator, a polarizer, and two beam splitters) and Jet Propulsion Laboratory's novel beat detection circuit (a phase modulator, two optical taps, and a beam splitter) which provides a means of directly reading angular position and rotation rate. The optical subsystem consisting of the fiber-pigtailed IOC and a sensing coil of 945 meters of polarization-maintaining fiber has a loss of 18.7dB, which includes 9dB due to the architecture and unpolarized source. A random walk coefficient was measured using an edge-emitting LED as the source.

  1. Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2013-01-01

    A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

  2. Single-Event Upset and Snapback in Silicon-on-Insulator Devices and Integrated Circuits

    SciTech Connect

    DODD,PAUL E.; SHANEYFELT,MARTY R.; WALSH,DAVID S.; SCHWANK,JAMES R.; HASH,GERALD L.; LOEMKER,RHONDA ANN; DRAPER,BRUCE L.; WINOKUR,PETER S.

    2000-08-15

    The characteristics Of ion-induced charge collection and single-event upset are studied in SOI transistors and circuits with various body tie structures. Impact ionization effects including single-event snapback are shown to be very important. Focused ion microbeam experiments are used to find single-event snapback drain voltage thresholds in n-channel SOI transistors as a function of device width. Three-Dimensional device simulations are used to determine single-event upset and snapback thresholds in SOI SRAMS, and to study design tradeoffs for various body-tie structures. A window of vulnerability to single-event snapback is shown to exist below the single-event upset threshold. The presence of single-event snapback in commercial SOI SRAMS is confirmed through broadbeam ion testing, and implications for hardness assurance testing of SOI integrated circuits are discussed.

  3. 60-GHz integrated-circuit high data rate quadriphase shift keying exciter and modulator

    NASA Technical Reports Server (NTRS)

    Grote, A.; Chang, K.

    1984-01-01

    An integrated-circuit quadriphase shift keying (QPSK) exciter and modulator have demonstrated excellent performance directly modulating a carrier frequency of 60 GHz with an output phase error of less than 3 degrees and maximum amplitude error of 0.5 dB. The circuit consists of a 60-GHz Gunn VCO phase-locked to a low-frequency reference source, a 4th subharmonic mixer, and a QPSK modlator packaged into a small volume of 1.8 x 2.5 x 0.35 in. The use of microstrip has the advantages of small size, light-weight, and low-cost fabrication. The unit has the potential for multigigabit data rate applications.

  4. Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

    PubMed

    Chen, Guanyu; Yu, Yu; Zhang, Xinliang

    2016-08-01

    We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers. PMID:27472614

  5. Design and implementation of Gm-APD array readout integrated circuit for infrared 3D imaging

    NASA Astrophysics Data System (ADS)

    Zheng, Li-xia; Yang, Jun-hao; Liu, Zhao; Dong, Huai-peng; Wu, Jin; Sun, Wei-feng

    2013-09-01

    A single-photon detecting array of readout integrated circuit (ROIC) capable of infrared 3D imaging by photon detection and time-of-flight measurement is presented in this paper. The InGaAs avalanche photon diodes (APD) dynamic biased under Geiger operation mode by gate controlled active quenching circuit (AQC) are used here. The time-of-flight is accurately measured by a high accurate time-to-digital converter (TDC) integrated in the ROIC. For 3D imaging, frame rate controlling technique is utilized to the pixel's detection, so that the APD related to each pixel should be controlled by individual AQC to sense and quench the avalanche current, providing a digital CMOS-compatible voltage pulse. After each first sense, the detector is reset to wait for next frame operation. We employ counters of a two-segmental coarse-fine architecture, where the coarse conversion is achieved by a 10-bit pseudo-random linear feedback shift register (LFSR) in each pixel and a 3-bit fine conversion is realized by a ring delay line shared by all pixels. The reference clock driving the LFSR counter can be generated within the ring delay line Oscillator or provided by an external clock source. The circuit is designed and implemented by CSMC 0.5μm standard CMOS technology and the total chip area is around 2mm×2mm for 8×8 format ROIC with 150μm pixel pitch. The simulation results indicate that the relative time resolution of the proposed ROIC can achieve less than 1ns, and the preliminary test results show that the circuit function is correct.

  6. A 200 C Universal Gate Driver Integrated Circuit for Extreme Environment Applications

    SciTech Connect

    Tolbert, Leon M; Huque, Mohammad A; Islam, Syed K; Blalock, Benjamin J

    2012-01-01

    High-temperature power converters (dc-dc, dc-ac, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics also need to perform at high temperature. This paper presents a silicon-on-insulator (SOI) based high-temperature gate driver integrated circuit (IC) incorporating an on-chip low-power temperature sensor and demonstrating an improved peak output current drive over our previously reported work. This driver IC has been primarily designed for automotive applications, where the underhood temperature can reach 200 C. This new gate driver prototype has been designed and implemented in a 0.8 {micro}m, 2-poly, and 3-metal bipolar CMOS-DMOS (Double-Diffused Metal-Oxide Semiconductor) on SOI process and has been successfully tested for up to 200 C ambient temperature driving a SiC MOSFET and a SiC normally-ON JFET. The salient feature of the proposed universal gate driver is its ability to drive power switches over a wide range of gate turn-ON voltages such as MOSFET (0 to 20 V), normally-OFF JFET (-7 to 3 V), and normally-ON JFET (-20 to 0 V). The measured peak output current capability of the driver is around 5 A and is thus capable of driving several power switches connected in parallel. An ultralow-power on-chip temperature supervisory circuit has also been integrated into the die to safeguard the driver circuit against excessive die temperature ({ge}220 C). This approach utilizes increased diode leakage current at higher temperature to monitor the die temperature. The power consumption of the proposed temperature sensor circuit is below 10 {micro}W for operating temperature up to 200 C.

  7. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  8. QIE10: a new front-end custom integrated circuit for high-rate experiments

    NASA Astrophysics Data System (ADS)

    Baumbaugh, A.; Dal Monte, L.; Drake, G.; Freeman, J.; Hare, D.; Hernandez Rojas, H.; Hughes, E.; Los, S.; Mendez Mendez, D.; Proudfoot, J.; Shaw, T.; Tully, C.; Vidal, R.; Whitmore, J.; Zimmerman, T.

    2014-01-01

    We present results on a new version of the QIE (Charge Integrator and Encoder), a custom Application Specific Integrated Circuit (ASIC) designed at Fermilab. Developed specifically for the measurement of charge from photo-detectors in high-rate environments, this most recent addition to the QIE family features 3 fC sensitivity, 17-bits of dynamic range with logarithmic response, a Time-to-Digital Converter (TDC) with sub-nanosecond resolution, and internal charge injection. The device is capable of dead-timeless operation at 40 MHz, making it ideal for calorimetry at the Large hadron Collider (LHC). We present bench measurements and integration studies that characterize the performance, radiation tolerance measurements, and plans for deployment in the Atlas and CMS detectors as part of the Phase 1 and Phase 2 upgrades.

  9. Large-scale photonic integrated circuits for long-haul transmission and switching

    NASA Astrophysics Data System (ADS)

    Nagarajan, Radhakrishnan; Kato, Masaki; Pleumeekers, Jacco; Evans, Peter; Lambert, Damien; Chen, Arnold; Dominic, Vince; Mathur, Atul; Chavarkar, Prashant; Missey, Mark; Dentai, Andrew; Hurtt, Sheila; Bã¤Ck, Johan; Muthiah, Ranjani; Murthy, Sanjeev; Salvatore, Randal; Joyner, Charles; Rossi, Jon; Schneider, Richard; Ziari, Mehrdad; Tsai, Huan-Shang; Bostak, Jeffrey; Kauffman, Michael; Pennypacker, Stephen; Butrie, Timothy; Reffle, Michael; Mehuys, Dave; Mitchell, Matthew; Nilsson, Alan; Grubb, Stephen; Kish, Fred; Welch, David

    2007-02-01

    Dense wavelength division multiplexed (DWDM) large-scale, single-chip transmitter and receiver photonic integrated circuits (PICs), each capable of operating at 100 Gbits/s, have been deployed in the field since the end of 2004. These highly integrated InP chips have significantly changed the economics of long-haul optical transport networks. First, a review of the ten-channel, 100 Gbits/s PIC is presented. Then two extensions of the technology are demonstrated; first is wide temperature, coolerless operation of the 100 Gbits/s PIC, and second is a single integrated chip with 40 channels operating at 40 Gbits/s, capable of an aggregate data rate of 1.6 Tbits/s.

  10. Integrated optical interconnection for polymeric planar lightwave circuit device using roll-to-roll ultraviolet imprint

    NASA Astrophysics Data System (ADS)

    Cho, Sang Uk; Kang, Ho Ju; Chang, Sunghwan; Choi, Doo-sun; Kim, Chang-Seok; Jeong, Myung Yung

    2014-08-01

    We propose an integrated structure that combines chip and fiber array blocks for optical interconnection with a polymeric planar lightwave circuit (PLC) device using the roll-to-roll imprint process. The fiber array blocks and PLC chip of the integrated structure are fabricated on the same substrate, and the alignments in the three spatial directions were established with the insertion of an optical fiber. The characteristics of the integrated structure were evaluated by fabricating a 1×2 optical splitter device. The structure had an insertion loss of 3.9 dB, and the optical uniformity of the channel was 0.1 dB, indicating that the same performance for an active alignment can be expected.

  11. Separate Brain Circuits Support Integrative and Semantic Priming in the Human Language System.

    PubMed

    Feng, Gangyi; Chen, Qi; Zhu, Zude; Wang, Suiping

    2016-07-01

    Semantic priming is a crucial phenomenon to study the organization of semantic memory. A novel type of priming effect, integrative priming, has been identified behaviorally, whereby a prime word facilitates recognition of a target word when the 2 concepts can be combined to form a unitary representation. We used both functional and anatomical imaging approaches to investigate the neural substrates supporting such integrative priming, and compare them with those in semantic priming. Similar behavioral priming effects for both semantic (Bread-Cake) and integrative conditions (Cherry-Cake) were observed when compared with an unrelated condition. However, a clearly dissociated brain response was observed between these 2 types of priming. The semantic-priming effect was localized to the posterior superior temporal and middle temporal gyrus. In contrast, the integrative-priming effect localized to the left anterior inferior frontal gyrus and left anterior temporal cortices. Furthermore, fiber tractography showed that the integrative-priming regions were connected via uncinate fasciculus fiber bundle forming an integrative circuit, whereas the semantic-priming regions connected to the posterior frontal cortex via separated pathways. The results point to dissociable neural pathways underlying the 2 distinct types of priming, illuminating the neural circuitry organization of semantic representation and integration. PMID:26209843

  12. The advanced microgrid. Integration and interoperability

    SciTech Connect

    Bower, Ward Isaac; Ton, Dan T.; Guttromson, Ross; Glover, Steven F; Stamp, Jason Edwin; Bhatnagar, Dhruv; Reilly, Jim

    2014-02-01

    This white paper focuses on "advanced microgrids," but sections do, out of necessity, reference today's commercially available systems and installations in order to clearly distinguish the differences and advances. Advanced microgrids have been identified as being a necessary part of the modern electrical grid through a two DOE microgrid workshops, the National Institute of Standards and Technology, Smart Grid Interoperability Panel and other related sources. With their grid-interconnectivity advantages, advanced microgrids will improve system energy efficiency and reliability and provide enabling technologies for grid-independence to end-user sites. One popular definition that has been evolved and is used in multiple references is that a microgrid is a group of interconnected loads and distributed-energy resources within clearly defined electrical boundaries that acts as a single controllable entity with respect to the grid. A microgrid can connect and disconnect from the grid to enable it to operate in both grid-connected or island-mode. Further, an advanced microgrid can then be loosely defined as a dynamic microgrid.

  13. Spherical particles and voids effect on current and potential distribution in integrated circuit leads

    NASA Astrophysics Data System (ADS)

    Pang, Dongqing; Sun, Yicai

    2015-06-01

    Relationships of resistance with a width of 0.1 μm for different heights and currents at a given volt drop are plotted for a 0.2 μm length smooth copper lead. The lead is specified to connect with the integrated circuit AD8622 with its Isr = 0.350 mA to determine the volt drop = 0.2 mV. The total current is computed according to the total resistance of the lead for the different void radius at this volt drop. The current density value at the right boundary is determined by Ohm’s law. After combining the integration of the total current as a prerequisite with the interpolation of current density values from the left, i.e. void edge to the right boundaries, their distribution is obtained, showing current crowding outside of their edges and a great resistance with the increase of their radius. The calculation errors for comparison with the Laplace equation are calculated, mainly located on the corners of void. The potential distribution can be obtained by multiplying sheet resistance to current density distribution. At last, the relationship between resistance, total current, current crowding and calculation errors with the different void radius and lead length are offered in several forms for use in the integrated circuit design.

  14. Deterministic Integration of Single Photon Sources in Silicon Based Photonic Circuits.

    PubMed

    Zadeh, Iman Esmaeil; Elshaari, Ali W; Jöns, Klaus D; Fognini, Andreas; Dalacu, Dan; Poole, Philip J; Reimer, Michael E; Zwiller, Val

    2016-04-13

    A major step toward fully integrated quantum optics is the deterministic incorporation of high quality single photon sources in on-chip optical circuits. We show a novel hybrid approach in which preselected III-V single quantum dots in nanowires are transferred and integrated in silicon based photonic circuits. The quantum emitters maintain their high optical quality after integration as verified by measuring a low multiphoton probability of 0.07 ± 0.07 and emission line width as narrow as 3.45 ± 0.48 GHz. Our approach allows for optimum alignment of the quantum dot light emission to the fundamental waveguide mode resulting in very high coupling efficiencies. We estimate a coupling efficiency of 24.3 ± 1.7% from the studied single-photon source to the photonic channel and further show by finite-difference time-domain simulations that for an optimized choice of material and design the efficiency can exceed 90%. PMID:26954298

  15. SEM analysis of ionizing radiation effects in linear integrated circuits. [Scanning Electron Microscope

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Gauthier, M. K.

    1977-01-01

    A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

  16. High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

    NASA Technical Reports Server (NTRS)

    Shalkhauser, K. A.; Li, K.; Shih, Y. C.

    1992-01-01

    Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.

  17. Organic–Inorganic Eu3+/Tb3+ codoped hybrid films for temperature mapping in integrated circuits

    PubMed Central

    Brites, Carlos D. S.; Lima, Patrícia P.; Silva, Nuno J. O.; Millán, Angel; Amaral, Vitor S.; Palacio, Fernando; Carlos, Luís D.

    2013-01-01

    The continuous decrease on the geometric size of electronic devices and integrated circuits generates higher local power densities and localized heating problems that cannot be characterized by conventional thermographic techniques. Here, a self-referencing intensity-based molecular thermometer involving a di-ureasil organic-inorganic hybrid thin film co-doped with Eu3+ and Tb3+ tris (β-diketonate) chelates is used to obtain the temperature map of a FR4 printed wiring board with spatio-temporal resolutions of 0.42 μm/4.8 ms. PMID:24790938

  18. Semi-custom integrated circuit amplifier and level discriminator for nuclear and space instruments

    SciTech Connect

    Hahn, S.F.; Cafferty, M.M.

    1990-01-01

    An extra fast current feedback amplifier and a level discriminator are developed employing a dielectrically-isolated bipolar, semi-custom Application Specific Integrated Circuit (ASIC) process. These devices are specifically designed for instruments aboard spacecrafts or in portable packages requiring low power and weight. The amplifier adopts current feedback for a unity-gain bandwidth of 90 MHz while consuming 50 mW. The level discriminator uses a complementary output driver for balanced positive and negative response times. The power consumption of these devices can be programmed by external resistors for optimal speed and power trade-off. 3 refs., 7 figs.

  19. Neutron-induced latch-up immunity in metal gate CMOS integrated circuits

    SciTech Connect

    Barnes, C.E.; Rollins, J.G.; Hachey, D.

    1987-12-01

    Neutron-induced latch-up immunity has been studied in metal gate CMOS integrated circuits as a function of neutron fluence by measuring both the current gain products (beta product) of parasitic NPN and PNP transistors, and the flash x-ray latch-up thresholds prior to and following irradiation and subsequent stabilization anneal. Correlations between the actual latch-up thresholds and the measured beta products are established for the three part types investigated. These correlations indicate that the measurement of beta products on judiciously chosen parasitic transistors is a viable technique for estimating latch-up susceptibility when the observed margin is substantial.

  20. Rolled-up inductor structure for a radiofrequency integrated circuit (RFIC)

    SciTech Connect

    Li, Xiuling; Huang, Wen; Ferreira, Placid M.; Yu, Xin

    2015-12-29

    A rolled-up inductor structure for a radiofrequency integrated circuit (RFIC) comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis. The multilayer sheet comprises a conductive pattern layer on a strain-relieved layer, and the conductive pattern layer comprises at least one conductive strip having a length extending in a rolling direction. The at least one conductive strip thereby wraps around the longitudinal axis in the rolled configuration. The conductive pattern layer may also comprise two conductive feed lines connected to the conductive strip for passage of electrical current therethrough. The conductive strip serves as an inductor cell of the rolled-up inductor structure.

  1. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    NASA Technical Reports Server (NTRS)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  2. Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

    NASA Technical Reports Server (NTRS)

    Kunath, R. R.; Bhasin, K. B.

    1986-01-01

    The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

  3. Modeling for infrared readout integrated circuit based on Verilog-A

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Shi, Zelin

    2015-04-01

    Infrared detectors are the core of infrared imaging systems, while readout integrated circuits are the key components of detectors. In order to grasp the performance of circuits quickly and accurately, a method of circuit modeling using Verilog-A language is proposed, which present a behavioral simulation model for the ROIC. At first, a typical capacitor trans-impedance amplifier(CTIA) ROIC unit is showed, then the two essential parts of it,operational amplifier and switch are modeled on behavioral level. The op amp model concludes these non-ideal factors, such as finite gain-bandwidth product, input and output offset, output resistance and so on. Non-deal factors that affect switches are considered in the switch behavioral model, such as rise and fall time, on-resistance and so on. At last time-domain modeling method for noise is presented, which is compared with the classical frequency domain method for difference. The analysis results shows that in the situation that noise interested bandwidth(NIBW) is more than 5MHz, the difference between the two methods leads to less than 1% if the sample rate of noise is larger 4 times of the NIBW

  4. Analysis and optimization of TSV-TSV coupling in three-dimensional integrated circuits

    NASA Astrophysics Data System (ADS)

    Yingbo, Zhao; Gang, Dong; Yintang, Yang

    2015-04-01

    Through silicon via (TSV)-TSV coupling is detrimental to the performance of three-dimensional (3D) integrated circuits (ICs) with the major negative effect of introducing coupling noise. In order to obtain an accurate estimation of the coupling level from TSV-TSV in the early design stage, this paper first proposes an impedance-level model of the coupling channel between TSVs based on a two-port network, and then derives the formula of the coupling coefficient to describe the TSV-TSV coupling effect. The accuracy of the formula is validated by comparing the results with 3D full-wave simulations. Furthermore, a design technique for optimizing the coupling between adjacent coupled signal TSVs is proposed. Through SPICE simulations, the proposed technique shows its feasibility to reduce the coupling noise for both a simple TSV-TSV circuit and a complicated circuit with more TSVs, and demonstrates its potential for designers in achieving the goal of improving the electrical performance of 3D ICs. Project supported by the National Natural Science Foundation of China (No. 61334003).

  5. A Framework for Robust Multivariable Optimization of Integrated Circuits in Space Applications

    NASA Technical Reports Server (NTRS)

    DuMonthier, Jeffrey; Suarez, George

    2013-01-01

    Application Specific Integrated Circuit (ASIC) design for space applications involves multiple challenges of maximizing performance, minimizing power and ensuring reliable operation in extreme environments. This is a complex multidimensional optimization problem which must be solved early in the development cycle of a system due to the time required for testing and qualification severely limiting opportunities to modify and iterate. Manual design techniques which generally involve simulation at one or a small number of corners with a very limited set of simultaneously variable parameters in order to make the problem tractable are inefficient and not guaranteed to achieve the best possible results within the performance envelope defined by the process and environmental requirements. What is required is a means to automate design parameter variation, allow the designer to specify operational constraints and performance goals, and to analyze the results in a way which facilitates identifying the tradeoffs defining the performance envelope over the full set of process and environmental corner cases. The system developed by the Mixed Signal ASIC Group (MSAG) at the Goddard Space Flight Center is implemented as framework of software modules, templates and function libraries. It integrates CAD tools and a mathematical computing environment, and can be customized for new circuit designs with only a modest amount of effort as most common tasks are already encapsulated. Customization is required for simulation test benches to determine performance metrics and for cost function computation. Templates provide a starting point for both while toolbox functions minimize the code required. Once a test bench has been coded to optimize a particular circuit, it is also used to verify the final design. The combination of test bench and cost function can then serve as a template for similar circuits or be re-used to migrate the design to different processes by re-running it with the

  6. Systems engineering and integration: Advanced avionics laboratories

    NASA Technical Reports Server (NTRS)

    1990-01-01

    In order to develop the new generation of avionics which will be necessary for upcoming programs such as the Lunar/Mars Initiative, Advanced Launch System, and the National Aerospace Plane, new Advanced Avionics Laboratories are required. To minimize costs and maximize benefits, these laboratories should be capable of supporting multiple avionics development efforts at a single location, and should be of a common design to support and encourage data sharing. Recent technological advances provide the capability of letting the designer or analyst perform simulations and testing in an environment similar to his engineering environment and these features should be incorporated into the new laboratories. Existing and emerging hardware and software standards must be incorporated wherever possible to provide additional cost savings and compatibility. Special care must be taken to design the laboratories such that real-time hardware-in-the-loop performance is not sacrificed in the pursuit of these goals. A special program-independent funding source should be identified for the development of Advanced Avionics Laboratories as resources supporting a wide range of upcoming NASA programs.

  7. Integrating Practice and Theory for Advancement

    ERIC Educational Resources Information Center

    Bakewell, Thomas

    2005-01-01

    This is the first installment of a multipart practitioners' guide focused on strategic planning, organizational development, and legal issues. It features practical advice and powerful insights for implementing advancement programs that are organized, productive, and legal--and that generate top results. The author, an organizational development…

  8. 75 FR 75694 - Certain Semiconductor Integration Circuits Using Tungsten Metallization and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-06

    ... determination to the U.S. Court of Appeals for the Federal Circuit (``Federal Circuit''). While the appeal was... responded. On November 15, 2010, the Federal Circuit issued an order vacating the Commission's...

  9. Bio-photosensors based on monolithic integration of light sensitive proteins with semiconductor devices and integrated circuits

    NASA Astrophysics Data System (ADS)

    Xu, Jian

    This Ph.D. work is aimed to study the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. A detailed study was carried out on the coupling mechanism at the protein-semiconductor interface. It was found that electrophoretic deposition of dried protein membranes is best suited for reliable integration with semiconductor devices. In the course of this study, the photoelectric response time was directly measured by a femtosecond electro-optic sampling technique. The measured transient response time of 4.5 picosecond, gives valuable information in the photocycle and kinetic processes associated with the photoisomerization. A highly sensitive bio-photosensor was designed and demonstrated, for the first time, based on the monolithic integration of bacteriorhodopsin and GaAs/AlGaAs modulation doped field effect transistors (MODFET). In this device, the small photovoltage generated by the protein is applied to the gate of the transistor embedded underneath, and therefore amplified and transformed into a large current signal. A light responsivity of 3.8 A/W was measured. Following this, double stage high gain MODFET-based transimpedance amplifier circuits were designed and monolithically integrated with the BR/FET bio-photosensors. The integrated bio-photoreceiver circuit exhibits a high responsivity of 175 V/W. The photoresponse was measured to be linear within several orders of magnitudes of the peak intensity of the light pulses. Unlike most semiconductor photodetectors, this bio-photosensor exhibits high sensitivity to change in incident light intensities, which is the essence of motion and edge detection. Polarization sensitive detection with the bio-photosensors was also demonstrated. This was achieved by photochemically modifying the molecular arrangement of the protein molecules inside the protein membrane. In addition, a dual focus electro-optic micro-Fresnel lens was developed for an

  10. Advances in the theory of box integrals

    SciTech Connect

    Bailey, David H.; Borwein, J.M.; Crandall, R.E.

    2009-06-25

    Box integrals - expectations <|{rvec r}|{sup s}> or <|{rvec r}-{rvec q}|{sup s}> over the unit n-cube (or n-box) - have over three decades been occasionally given closed forms for isolated n,s. By employing experimental mathematics together with a new, global analytic strategy, we prove that for n {le} 4 dimensions the box integrals are for any integer s hypergeometrically closed in a sense we clarify herein. For n = 5 dimensions, we show that a single unresolved integral we call K{sub 5} stands in the way of such hyperclosure proofs. We supply a compendium of exemplary closed forms that naturally arise algorithmically from this theory.

  11. VO II-based microbolometer uncooled infrared focal plane arrays with CMOS readout integrated circuit

    NASA Astrophysics Data System (ADS)

    Chen, Xiqu; Yi, Xinjian

    2005-11-01

    Thin films of vanadium dioxide (VO II) were selected for microbolometers. The thin films were fabricated with a novel method mainly including ion-sputtering and annealing. It is found that the electrical properties of these thin films can be controlled by adjusting the time of ion-sputtering and annealing. A standard microbolometer pixel structure of micro-bridge has been applied. Two-dimensional arrays of microbolometers have been fabricated on silicon integrated circuit wafers using a surface micromachining technique. A new type of on-chip readout integrated circuit (ROIC) for 32×32 pixel bolometric detector arrays has been designed and fabricated using a 1.5μm double metal poly complementary metal oxide semiconductor (CMOS) processing. The readout circuit consists of three stages, which provides low noise, a highly stable detector bias, high photon current injection efficiency, high gain, and high speed. Several prototypes of 32×32 pixel bolometric detector arrays have been designed and fabricated. These arrays consist of detectors with lateral dimensions of 50μm 50μm, and each bolometric detector is on a 100μm pitch. The results of measurement show that the fabricated uncooled infrared focal plane arrays (UIRFPAs) have excellent performance. The frame rate is 50Hz, the pixel operability is above 96%, the responsivity (R) @ f/1 value is up to 15000V/W, the noise equivalent temperature difference (NETD) @ f/1 and 30Hz is about 50mK, and the average power dissipation is only 24.7mW. The results indicate that the technology of fabricating these 32×32 UIRFPAs has potential to be utilized for fabricating low cost and large-scale UIRFPAs.

  12. Length minimization design considerations in photonic integrated circuits incorporating directional couplers

    NASA Technical Reports Server (NTRS)

    Boyd, Joseph T.; Radens, Carl J.; Kauffman, Michael T.

    1991-01-01

    Because directional couplers involve channel waveguides which are very close to one another, transition regions to regions where channel waveguides are widely separated are utilized. The total length of a directional coupler and transition regions can be minimized for a particular degree of field confinement. Calculations presented for LiNbO3-, GaAlAs-, and SiO2/Si-based optical channel waveguides demonstrate the presence of a minimum total length corresponding to a particular degree of field confinement. The overall length at the minimum is shown to be significantly lower than for other values of field confinement allowing single-mode operation. This implies that either more devices can be integrated on a substrate or that less material is needed for an integrated optical circuit.

  13. Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit

    NASA Astrophysics Data System (ADS)

    Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

    2006-05-01

    Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss.

  14. Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit.

    PubMed

    Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

    2006-05-29

    Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss. PMID:19516623

  15. Field-hardened optical waveguide hybrid integrated-circuit multisensor chemical probe and its chemistry

    NASA Astrophysics Data System (ADS)

    Pollina, Richard J.; Himka, Roger L.; Saini, Devinder P.; McGibbon, Alan; Klainer, Stanley M.

    1997-05-01

    A single probe containing three hybrid integrated-circuit, optical waveguide, chemical-biochemical sensors (chip sensors) has been developed. Each chip sensor contains two hybrid waveguides -- one for sensing and one for reference. The sense waveguide is coated with a species-specific or group-specific chemistry or biochemistry. The reference waveguide is coated with a version of the sense chemistry or biochemistry, which is not sensitive to the analyte. The integrated structure is encapsulated and contains a single fixed light source, two detectors (reference and sense), and an optical train. The design is amenable to fluorescence, absorption, and refraction measurements. The three chip sensors are individually mounted in a probe that contains all of the electronics and computing capability necessary to collect and process the output information from each chip sensor. Only the surface of the individual chips are exposed to the target analytes. The probe is rugged, intrinsically safe, and can operate under 75 m (250 ft) of water.

  16. Modeling and extraction of interconnect parameters in very-large-scale integrated circuits

    NASA Astrophysics Data System (ADS)

    Yuan, C. P.

    1983-08-01

    The increased complexity of the very large scale integrated circuits (VLSI) has greatly impacted the field of computer-aided design (CAD). One of the problems brought about is the interconnection problem. In this research, the goal is two fold. First of all, a more accurate numerical method to evaluate the interconnect capacitance, including the coupling capacitance between interconnects and the fringing field capacitance, was investigated, and the integral method was employed. Two FORTRAN programs "CAP2D' and "CAP3D' based on this method were developed. Second, a PASCAL extraction program emphasizing the extraction of interconnect parameters was developed. It employs the cylindrical approximation formula for the self-capacitance of a single interconnect and other simple formulas for the coupling capacitances derived by a least square method. The extractor assumes only Manhattan geometry and NMOS technology. Four-dimensional binary search trees are used as the basic data structure.

  17. Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

    NASA Astrophysics Data System (ADS)

    Kuo, Yue

    2008-03-01

    Thin-film transistor (TFT) and ultra-large scale integrated circuit (ULSIC) have been compared and discussed with respect to the development history, technology trends, and applications. Detailed issues on materials, processes, and devices in the large-area TFT array fabrication and nano-size metal-oxide-semiconductor field effect transistors (MOSFETs) composed ULSIC on large wafers were also examined. The TFT fabrication processes were originally derived from ULSIC. However, there are many unique large-area processes and theories developed during the study of the TFT array fabrication, which can greatly benefit the future large wafer ULSIC production process. Although their future applications will be in different areas, there are opportunities that TFTs can be integrated into ULSIC products to enhance the functions and performance.

  18. Design and technological peculiarities of making vacuum integrated circuit of a thermocathode-based AC amplifier

    NASA Astrophysics Data System (ADS)

    Grigorishin, I. L.; Kotova, I. F.; Mukhurov, N. I.

    1997-02-01

    Despite promising prospects and comprehensive nature of contemporary studies aimed at developing autoemission cathodes, only thermoemitter-based vacuum integrated circuits (VIC) have been realized by now. Here, the results are presented of building and testing, in extreme environment, thermoemission VICs of a RF active oscillator and multivibrator. The microcircuits made have limited functional capabilities. To expand their capabilities the VIC of an AC amplifier was developed. This paper deals with circuit design aspects of making the AC amplifier based on the potentialities and specific features of the process of anodic oxidation of aluminium to form dielectric substrates of cathode-heating assemblies (CHA) and anode-grid assemblies (AGA). Design and technological methods are described that are used to make active (five vacuum microtriodes) and passive (resistors, capacitors, commutation) film elements. As compared to earlier devices, the AC amplifier VIC is more economical and has better characteristics in terms of miniaturization and integration. Its fundamental peculiarities are two-sided obtained through anodizing to form dielectric substrates with microrelief and superfine-structure grids of microtriodes. Some characteristics of the AC amplifier VIC are given and ways of improving them are discussed.

  19. Ion-beam apparatus and method for analyzing and controlling integrated circuits

    DOEpatents

    Campbell, Ann N.; Soden, Jerry M.

    1998-01-01

    An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

  20. Ion-beam apparatus and method for analyzing and controlling integrated circuits

    DOEpatents

    Campbell, A.N.; Soden, J.M.

    1998-12-01

    An ion-beam apparatus and method for analyzing and controlling integrated circuits are disclosed. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal. 4 figs.

  1. Micro/nano-scale fabrication of integrated polymer optical wire circuit arrays for optical printed circuit board (O-PCB) application

    NASA Astrophysics Data System (ADS)

    Lee, El-Hang; Lee, Seung G.; Park, Se G.; Kim, Kyong H.; Kang, Jin K.; Chin, In J.; Kwon, Y. K.; Choi, Young W.

    2005-02-01

    We report on the results of our study on the micro/nano-scale design, fabrication and integration of waveguide arrays for optical printed circuit boards (O-PCBs) and VLSI micro/nano-photonic applications. The O-PCBs are designed to perform the functions of transporting, switching, routing and distributing optical signals on flat modular boards or substrates. We have assembled O-PCBs using optical waveguide arrays and circuits made of polymer materials and have examined information handling performances. We also designed power beam splitters and waveguide filters, using nano-scale photonic band-gap crystals, for VLSI photonic integration application. We discuss potential applications of polymer optical waveguide devices and arrays for O-PCB and VLSI micro/nano-photonics for computers, telecommunications, and transportation systems.

  2. Advancing Instructional Communication: Integrating a Biosocial Approach

    ERIC Educational Resources Information Center

    Horan, Sean M.; Afifi, Tamara D.

    2014-01-01

    Celebrating 100 years of the National Communication Association necessitates that, as we commemorate our past, we also look toward our future. As part of a larger conversation about the future of instructional communication, this essay reinvestigates the importance of integrating biosocial approaches into instructional communication research. In…

  3. Advanced integrated solution for MEMS design

    NASA Astrophysics Data System (ADS)

    Liateni, Karim; Moulinier, David; Affour, Bachar; Boutamine, H.; Karam, Jean Michel; Veychard, D.; Courtois, Bernard; Cao, Ariel D.

    1999-03-01

    This paper presents a fully integrated solution for the development of Micro Electro Mechanical Systems which covers component libraries, design tools and designs methodologies which are used in conjunction with conventional design automation tools. This solutio enables system houses in wireless and optical communications and consumers electronics markets to reduce their internal development costs and significantly accelerate their product development cycles.

  4. On the Basis of Synaptic Integration Constancy during Growth of a Neuronal Circuit

    PubMed Central

    De-La-Rosa Tovar, Adriana; Mishra, Prashant K.; De-Miguel, Francisco F.

    2016-01-01

    We studied how a neuronal circuit composed of two neuron types connected by chemical and electrical synapses maintains constant its integrative capacities as neurons grow. For this we combined electrophysiological experiments with mathematical modeling in pairs of electrically-coupled Retzius neurons from postnatal to adult leeches. The electrically-coupled dendrites of both Retzius neurons receive a common chemical input, which produces excitatory postsynaptic potentials (EPSPs) with varying amplitudes. Each EPSP spreads to the soma, but also crosses the electrical synapse to arrive at the soma of the coupled neuron. The leak of synaptic current across the electrical synapse reduces the amplitude of the EPSPs in proportion to the coupling ratio. In addition, summation of EPSPs generated in both neurons generates the baseline action potentials of these serotonergic neurons. To study how integration is adjusted as neurons grow, we first studied the characteristics of the chemical and electrical connections onto the coupled dendrites of neuron pairs with soma diameters ranging from 21 to 75 μm. Then by feeding a mathematical model with the neuronal voltage responses to pseudorandom noise currents we obtained the values of the coupling ratio, the membrane resistance of the soma (rm) and dendrites (rdend), the space constant (λ) and the characteristic dendritic length (L = l/λ). We found that the EPSPs recorded from the somata were similar regardless on the neuron size. However, the amplitude of the EPSPs and the firing frequency of the neurons were inversely proportional to the coupling ratio of the neuron pair, which also was independent from the neuronal size. This data indicated that the integrative constancy relied on the passive membrane properties. We show that the growth of Retzius neurons was compensated by increasing the membrane resistance of the dendrites and therefore the λ value. By solely increasing the dendrite resistance this circuit maintains

  5. On the Basis of Synaptic Integration Constancy during Growth of a Neuronal Circuit.

    PubMed

    De-La-Rosa Tovar, Adriana; Mishra, Prashant K; De-Miguel, Francisco F

    2016-01-01

    We studied how a neuronal circuit composed of two neuron types connected by chemical and electrical synapses maintains constant its integrative capacities as neurons grow. For this we combined electrophysiological experiments with mathematical modeling in pairs of electrically-coupled Retzius neurons from postnatal to adult leeches. The electrically-coupled dendrites of both Retzius neurons receive a common chemical input, which produces excitatory postsynaptic potentials (EPSPs) with varying amplitudes. Each EPSP spreads to the soma, but also crosses the electrical synapse to arrive at the soma of the coupled neuron. The leak of synaptic current across the electrical synapse reduces the amplitude of the EPSPs in proportion to the coupling ratio. In addition, summation of EPSPs generated in both neurons generates the baseline action potentials of these serotonergic neurons. To study how integration is adjusted as neurons grow, we first studied the characteristics of the chemical and electrical connections onto the coupled dendrites of neuron pairs with soma diameters ranging from 21 to 75 μm. Then by feeding a mathematical model with the neuronal voltage responses to pseudorandom noise currents we obtained the values of the coupling ratio, the membrane resistance of the soma (rm ) and dendrites (r dend), the space constant (λ) and the characteristic dendritic length (L = l/λ). We found that the EPSPs recorded from the somata were similar regardless on the neuron size. However, the amplitude of the EPSPs and the firing frequency of the neurons were inversely proportional to the coupling ratio of the neuron pair, which also was independent from the neuronal size. This data indicated that the integrative constancy relied on the passive membrane properties. We show that the growth of Retzius neurons was compensated by increasing the membrane resistance of the dendrites and therefore the λ value. By solely increasing the dendrite resistance this circuit maintains

  6. Integrated performance and dependability analysis using the advanced design environment prototype tool ADEPT

    SciTech Connect

    Rao, R.; Rahman, A.; Johnson, B.W.

    1995-09-01

    The Advanced Design Environment Prototype Tool (ADEPT) is an evolving integrated design environment which supports both performance and dependability analysis. ADEPT models are constructed using a collection of predefined library elements, called ADEPT modules. Each ADEPT module has an unambiguous mathematical definition in the form of a Colored Petri Net (CPN) and a corresponding Very High Speed Integrated Circuits (VHSIC) Hardware Description Language (VHDL) description. As a result, both simulation-based and analytical approaches for analysis can be employed. The focus of this paper is on dependability modeling and analysis using ADEPT. We present the simulation based approach to dependability analysis using ADEPT and an approach to integrating ADEPT and the Reliability Estimation System Testbed (REST) engine developed at NASA. We also present analytical techniques to extract the dependability characteristics of a system from the CPN definitions of the modules, in order to generate alternate models such as Markov models and fault trees.

  7. Integrated modeling of advanced optical systems

    NASA Astrophysics Data System (ADS)

    Briggs, Hugh C.; Needels, Laura; Levine, B. Martin

    1993-02-01

    This poster session paper describes an integrated modeling and analysis capability being developed at JPL under funding provided by the JPL Director's Discretionary Fund and the JPL Control/Structure Interaction Program (CSI). The posters briefly summarize the program capabilities and illustrate them with an example problem. The computer programs developed under this effort will provide an unprecedented capability for integrated modeling and design of high performance optical spacecraft. The engineering disciplines supported include structural dynamics, controls, optics and thermodynamics. Such tools are needed in order to evaluate the end-to-end system performance of spacecraft such as OSI, POINTS, and SMMM. This paper illustrates the proof-of-concept tools that have been developed to establish the technology requirements and demonstrate the new features of integrated modeling and design. The current program also includes implementation of a prototype tool based upon the CAESY environment being developed under the NASA Guidance and Control Research and Technology Computational Controls Program. This prototype will be available late in FY-92. The development plan proposes a major software production effort to fabricate, deliver, support and maintain a national-class tool from FY-93 through FY-95.

  8. Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

    2001-01-01

    In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

  9. Large-scale planar lightwave circuits

    NASA Astrophysics Data System (ADS)

    Bidnyk, Serge; Zhang, Hua; Pearson, Matt; Balakrishnan, Ashok

    2011-01-01

    By leveraging advanced wafer processing and flip-chip bonding techniques, we have succeeded in hybrid integrating a myriad of active optical components, including photodetectors and laser diodes, with our planar lightwave circuit (PLC) platform. We have combined hybrid integration of active components with monolithic integration of other critical functions, such as diffraction gratings, on-chip mirrors, mode-converters, and thermo-optic elements. Further process development has led to the integration of polarization controlling functionality. Most recently, all these technological advancements have been combined to create large-scale planar lightwave circuits that comprise hundreds of optical elements integrated on chips less than a square inch in size.

  10. Flexible low-voltage organic integrated circuits with megahertz switching frequencies (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Zschieschang, Ute; Takimiya, Kazuo; Zaki, Tarek; Letzkus, Florian; Richter, Harald; Burghartz, Joachim N.; Klauk, Hagen

    2015-09-01

    A process for the fabrication of integrated circuits based on bottom-gate, top-contact organic thin-film transistors (TFTs) with channel lengths as short as 1 µm on flexible plastic substrates has been developed. In this process, all TFT layers (gate electrodes, organic semiconductors, source/drain contacts) are patterned with the help of high-resolution silicon stencil masks, thus eliminating the need for subtractive patterning and avoiding the exposure of the organic semiconductors to potentially harmful organic solvents or resists. The TFTs employ a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs and circuits to operate with voltages of about 3 V. Using the vacuum-deposited small-molecule organic semiconductor 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 DNTT), TFTs with an effective field-effect mobility of 1.2 cm2/Vs, an on/off current ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 nsec per stage at a supply voltage of 3 V have been obtained. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. In addition to flexible ring oscillators, we have also demonstrated a 6-bit digital-to-analog converter (DAC) in a binary-weighted current-steering architecture, based on TFTs with a channel length of 4 µm and fabricated on a glass substrate. This DAC has a supply voltage of 3.3 V, a circuit area of 2.6 × 4.6 mm2, and a maximum sampling rate of 100 kS/s.

  11. Current advances in systems and integrative biology

    PubMed Central

    Robinson, Scott W.; Fernandes, Marco; Husi, Holger

    2014-01-01

    Systems biology has gained a tremendous amount of interest in the last few years. This is partly due to the realization that traditional approaches focusing only on a few molecules at a time cannot describe the impact of aberrant or modulated molecular environments across a whole system. Furthermore, a hypothesis-driven study aims to prove or disprove its postulations, whereas a hypothesis-free systems approach can yield an unbiased and novel testable hypothesis as an end-result. This latter approach foregoes assumptions which predict how a biological system should react to an altered microenvironment within a cellular context, across a tissue or impacting on distant organs. Additionally, re-use of existing data by systematic data mining and re-stratification, one of the cornerstones of integrative systems biology, is also gaining attention. While tremendous efforts using a systems methodology have already yielded excellent results, it is apparent that a lack of suitable analytic tools and purpose-built databases poses a major bottleneck in applying a systematic workflow. This review addresses the current approaches used in systems analysis and obstacles often encountered in large-scale data analysis and integration which tend to go unnoticed, but have a direct impact on the final outcome of a systems approach. Its wide applicability, ranging from basic research, disease descriptors, pharmacological studies, to personalized medicine, makes this emerging approach well suited to address biological and medical questions where conventional methods are not ideal. PMID:25379142

  12. Sensors, Circuits, and Satellites - NGSS at it's best: the integration of three dimensions with NASA science

    NASA Astrophysics Data System (ADS)

    Butcher, G. J.; Roberts-Harris, D.

    2013-12-01

    A set of innovative classroom lessons were developed based on informal learning activities in the 'Sensors, Circuits, and Satellites' kit manufactured by littleBits™ Electronics that are designed to lead students through a logical science content storyline about energy using sound and light and fully implements an integrated approach to the three dimensions of the Next Generation of Science Standards (NGSS). This session will illustrate the integration of NGSS into curriculum by deconstructing lesson design to parse out the unique elements of the 3 dimensions of NGSS. We will demonstrate ways in which we have incorporated the NGSS as we believe they were intended. According to the NGSS, 'The real innovation in the NGSS is the requirement that students are required to operate at the intersection of practice, content, and connection. Performance expectations are the right way to integrate the three dimensions. It provides specificity for educators, but it also sets the tone for how science instruction should look in classrooms. (p. 3). The 'Sensors, Circuits, and Satellites' series of lessons accomplishes this by going beyond just focusing on the conceptual knowledge (the disciplinary core ideas) - traditionally approached by mapping lessons to standards. These lessons incorporate the other 2 dimensions -cross-cutting concepts and the 8-practices of Sciences and Engineering-via an authentic and exciting connection to NASA science, thus implementing the NGSS in the way they were designed to be used: practices and content with the crosscutting concepts. When the NGSS are properly integrated, students are engaged in science and engineering content through the coupling of practice, content and connection. In the past, these two dimensions have been separated as distinct entities. We know now that coupling content and practices better demonstrates what goes on in real world science and engineering. We set out to accomplish what is called for in NGSS by integrating these

  13. Advances in Treatment Integrity Research: Multidisciplinary Perspectives on the Conceptualization, Measurement, and Enhancement of Treatment Integrity

    ERIC Educational Resources Information Center

    Schulte, Ann C.; Easton, Julia E.; Parker, Justin

    2009-01-01

    Documenting treatment integrity is an important issue in research and practice in any discipline concerned with prevention and intervention. However, consensus concerning the dimensions of treatment integrity and how they should be measured has yet to emerge. Advances from three areas in which significant treatment integrity work has taken…

  14. Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

    NASA Astrophysics Data System (ADS)

    Shin, Sang-Baie; Iijima, Ko-Ichiro; Chiba, Jun-Ichi; Okada, Hiroshi; Iwayama, Sho; Wakahara, Akihiro

    2011-04-01

    In this paper, we proposed the possibility of implementing a single chip device for realizing optoelectronic integrated circuits (OEICs). Micro-light-emitting-diode (LED) arrays and a complementary metal-oxide-semiconductor (CMOS) pulse width modulation (PWM) silicon driver were proposed, designed, and fabricated on a single chip. The micro-LED arrays were separated by a dry etching method into 64 pixels of 8×8, each with a size of 30×30 µm2 and operated in 3 V at 100 µA. The PWM Si driver was well operated and modulated using various control signals. Furthermore, to investigate the driver for handling massive parallel information, a simple multifunctional driver was designed, fabricated, and flip-chip-bonded using a gold compliant bump and anisotropic conductive adhesive with micro-LED arrays.

  15. Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

    PubMed Central

    Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

    2010-01-01

    The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

  16. Laser chemical vapor deposition of Cu and Ni in integrated circuit repair

    NASA Astrophysics Data System (ADS)

    Leppaevuori, Seppo; Remes, Janne; Moilanen, Hannu

    1996-09-01

    Laser-assisted chemical vapor deposition (LCVD) of nickel from Ni(CO)4 and copper from Cu(hfac)tmvs was utilized in the restructuring of an integrated circuit (IC) interconnection. Nickel and copper lines were deposited on passivated ICs by using a focused Ar+ laser beam to achieve new local rewirings on the chip. Nickel line depositions were carried out over the pressure range of 0.2 to 2.2 mbar of Ni(CO)4 buffered in 200 - 800 mbar He. The typical laser beam scan speed was 24 micrometers per second for both metals. The Cu(hfac)tmvs precursor gas partial pressure was 0.3 mbar buffered in 10 mbar He or H2 and typical laser scan speed was 24 micrometers per second. The morphology and chemical contents of the deposited interconnection microstructures was examined by atomic force microscopy (AFM), optical microscopy and laser ionization mass analysis (LIMA). The LIMA analysis indicated that the deposited copper surface was contaminated but the contamination level decreased when the layer was depth profiled. The deposited Ni lines were found to be pure Ni with only traces of carbon contamination. The utilization of XeCl excimer laser in the cutting of Al and Mo conductor lines and passivation contact via opening for IC modification is also described. LCVD method was successful in numerous different IC failure inspection and circuit modification cases.

  17. Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

    PubMed

    Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

    2016-07-26

    A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials. PMID:27322134

  18. Integrated circuit authentication using photon-limited x-ray microscopy.

    PubMed

    Markman, Adam; Javidi, Bahram

    2016-07-15

    A counterfeit integrated circuit (IC) may contain subtle changes to its circuit configuration. These changes may be observed when imaged using an x-ray; however, the energy from the x-ray can potentially damage the IC. We have investigated a technique to authenticate ICs under photon-limited x-ray imaging. We modeled an x-ray image with lower energy by generating a photon-limited image from a real x-ray image using a weighted photon-counting method. We performed feature extraction on the image using the speeded-up robust features (SURF) algorithm. We then authenticated the IC by comparing the SURF features to a database of SURF features from authentic and counterfeit ICs. Our experimental results with real and counterfeit ICs using an x-ray microscope demonstrate that we can correctly authenticate an IC image captured using orders of magnitude lower energy x-rays. To the best of our knowledge, this Letter is the first one on using a photon-counting x-ray imaging model and relevant algorithms to authenticate ICs to prevent potential damage. PMID:27420519

  19. Advanced integrated WDM system for POF communication

    NASA Astrophysics Data System (ADS)

    Haupt, M.; Fischer, U. H. P.

    2009-01-01

    Polymer Optical Fibres (POFs) show clear advantages compared to copper and glass fibres. In essence, POFs are inexpensive, space-saving and not susceptible to electromagnetic interference. Thus, the usage of POFs have become a reasonable alternative in short distance data communication. Today, POFs are applied in a wide number of applications due to these specific advantages. These applications include automotive communication systems and in-house-networks. State-of-the-art is to transmit data with only one channel over POF, this limits the bandwidth. To solve this problem, an integrated MUX/DEMUX-element for WDM over POF is designed and developed to use multiple channels. This integration leads to low costs, therefore this component is suitable for mass market applications. The fundamental idea is to separate the chromatic parts of the light in its monochromatic components by means of a grating based on an aspheric mirror. Due to the high NA of the POF the setup has to be designed in a 3D-approach. Therefore this setup cannot be compared with the planar solutions available on market, they would result high losses in the 3rd dimension. To achieve a fast and optimized design an optical simulation program is used. Particular attention has to be paid to the design of the POF as a light source in the simulation program and the optimisation of the grating. The following realization of the demultiplexer is planed to be done with injection molding. This technology offers easy and very economical processing. These advantages make this technology first choice for optical components in the low-cost array.

  20. SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs

    SciTech Connect

    Huque, Mohammad A; Tolbert, Leon M; Blalock, Benjamin; Islam, Syed K

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8-m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.