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Sample records for advanced mask inspection

  1. Generating mask inspection rules for advanced lithography

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Broadbent, Bill; Dayal, Aditya; Gallagher, Emily; Hsiang, ChingYun; Redding, Vincent

    2005-11-01

    Semiconductor product designs are necessarily constrained by both the wafer and mask lithographic capabilities. When mask image sizes approach the exposure wavelength, optical and resist effects distort the printed images. Applying optical proximity correction (OPC) to design features on the mask compensates for diffraction effects. However, aggressive OPC introduces even smaller minimum features, adds notches and bulges, introduces sub-resolution assist features (SRAFs) and generally creates a more challenging mask design with respect to data handling, printing and inspection. Mask defect inspection is a critical part of the mask process, ensuring that the mask pattern matches the intended design. However, the inspection itself imposes constraints on mask patterns that can be inspected with high defect sensitivity but low nuisance defect counts. These additional restrictions are undesirable since they can reduce the effectiveness of the OPC. IBM and KLA-Tencor have developed a test mask methodology to investigate the inspectability limits of the 576 and 516 mask inspection systems. The test mask design contains a variety of rules or features that currently impose inspectability limits on the inspection tools, in a range of sizes. The design also incorporates many features essential for obtaining valid results, such as a user-friendly layout, multiple pattern orientations, and background patterns. The mask was built and inspected in IBM Burlington's mask house. Preliminary inspection results will be presented; they underscore the importance of understanding both the inspection tool and the mask process when restricting mask design rules.

  2. Computational inspection applied to a mask inspection system with advanced aerial imaging capability

    NASA Astrophysics Data System (ADS)

    Pang, Linyong; Peng, Danping; He, Lin; Chen, Dongxue; Dam, Thuc; Tolani, Vikram; Tam, Aviram; Staud, Wolf

    2010-03-01

    At the most advanced technology nodes, such as 32nm and 22nm, aggressive OPC and Sub-Resolution Assist Features (SRAFs) are required. However, their use results in significantly increased mask complexity, challenging mask defect dispositioning more than ever. To address these challenges in mask inspection and defect dispositioning, new mask inspection technologies have been developed that not only provide high resolution masks imaged at the same wavelength as the scanner, but that also provide aerial images by using both: software simulation and hardware emulation. The original mask patterns stored by the optics of mask inspection systems can be recovered using a patented algorithm based on the Level Set Method. More accurate lithography simulation models can be used to further evaluate defects on simulated resist patterns using the recovered mask pattern in high resolution and aerial mode. An automated defect classification based on lithography significance and local CD changes is also developed to disposition tens of thousands of potential defects in minutes, so that inspection throughput is not impacted.

  3. Implementation strategy of wafer-plane and aerial-plane inspection for advanced mask manufacture

    NASA Astrophysics Data System (ADS)

    Kim, Won-Sun; Chung, Dong-Hoon; Jeon, Chan-Uk; Cho, HanKu; Huang, William; Miller, John; Inderhees, Gregg; Pinto, Becky; Hur, Jiuk; Park, Kihun; Han, Jay

    2009-04-01

    Inspection of aggressive Optical Proximity Correction (OPC) designs, improvement of usable sensitivity, and reduction of cost of ownership are the three major challenges for today's mask inspection methodologies. In this paper we will discuss using aerial-plane inspection and wafer-plane inspection as novel approaches to address these challenges for advanced reticles. Wafer-plane inspection (WPI) and aerial-plane inspection (API) are two lithographic inspection modes. This suite of new inspection modes is based on high resolution reflected and transmitted light images in the reticle plane. These images together with scanner parameters are used to generate the aerial plane image using either vector or scalar models. Then information about the resist is applied to complete construction of the wafer plane image. API reports defects based on intensity differences between test and reference images at the aerial plane, whereas WPI applies a resist model to the aerial image to enhance discrimination between printable and non-printable defects at the wafer plane. The combination of WPI and API along with the industry standard Reticle Plane Inspection (RPI) is designed to handle complex OPC features, improve usable sensitivity and reduce the cost of ownership. This paper will explore the application of aerial-plane and wafer-plane die-to-die inspections on advanced reticles. Inspection sensitivity, inspectability, and comparison with Aerial Imaging Measurement System (AIMSTM[1]) or wafer-print-line will be analyzed. Most importantly, the implementation strategy of a combination of WPI and API along with RPI leading-edge mask manufacturing will be discussed.

  4. Optical inspection of NGL masks

    NASA Astrophysics Data System (ADS)

    Pettibone, Donald W.; Stokowski, Stanley E.

    2004-12-01

    For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

  5. Electron beam EUV patterned mask inspection system

    NASA Astrophysics Data System (ADS)

    Yamada, Keizo; Kitayama, Yasunobu; Fiekowsky, Peter

    2011-11-01

    EUV lithography is expected to begin production in 2014. Production of successful EUV photomasks requires patterned mask inspection (PMI). The ultimate PMI tool is expected to utilize actinic (EUV) illumination. Development of such a tool is expected to require three years after funding. Current test EUV masks, such as 22 nm, can be inspected using 193 nm wavelength deep UV (DUV) inspection tools similar to those currently being used for DUV masks. The DUV inspection tools may be extended for the 16 nm node. However EUV production is expected to start with 11 nm node masks which cannot be inspected with proposed DUV inspection tools. Therefore E-beam inspection (EBI) is discussed as the interim PMI method. EBI has the advantage of high resolution and the disadvantages of low inspection speed and relative insensitivity to ML defects (in the multi-layer material). EBI inspection speed is limited by the pixel size, pixel capture rate and the number of electron columns. The pixel rate is limited by the detector time-resolution, the beam current, and the detection efficiency. Technical improvements in beam focus, secondary electron detection, and defect detection and analysis provide good performance for 22 nm node masks. We discuss the advances and show that performance can be extrapolated for 16 and 11 nm node patterned mask inspections. We present sensitivity and false-defect frequency results of using the Holon EBI tool on 22 nm test masks and a roadmap for extending its operation for use on 16 and 11 nm node masks for inspections requiring 2-5 hours per mask.

  6. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  7. A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection

    SciTech Connect

    Huh, S.; Ren, L.; Chan, D.; Wurm, S.; Goldberg, K. A.; Mochi, I.; Nakajima, T.; Kishimoto, M.; Ahn, B.; Kang, I.; Park, J.-O.; Cho, K.; Han, S.-I.; Laursen, T.

    2010-03-12

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.

  8. A novel approach to mask defect inspection

    NASA Astrophysics Data System (ADS)

    Sagiv, Amir; Shirman, Yuri; Mangan, Shmoolik

    2008-10-01

    Memory chips, now constituting a major part of semiconductor market, posit a special challenge for inspection, as they are generally produced with the smallest half-pitch available with today's technology. This is true, in particular, to photomasks of advanced memory devices, which are at the forefront of the "low-k1" regime. In this paper we present a novel photomask inspection approach, that is particularly suitable for low-k1 layers of advanced memory chips, owing to their typical dense and periodic structure. The method we present can produce a very strong signal for small mask defects, by suppression of the modulation of the pattern's image. Unlike dark-field detection, however, here a single diffraction order associated with the pattern generates a constant "gray" background image, that is used for signal enhancement. We define the theoretical basis for the new detection technique, and show, both analytically and numerically, that it can easily achieve a detection line past the printability spec, and that in cases it is at least as sensitive as high-resolution based detection. We also demonstrate this claim experimentally on a customer mask, using the platform of Applied Material's newly released Aera2TM mask inspection tool. The high sensitivity demonstrates the important and often overlooked concept that resolution is not synonymous with sensitivity. The novel detection method is advantageous in several other aspects, such as the very simple implementation, the high throughput, and the relatively simple pre- and post-processing algorithms required for signal extraction. These features, and in particular the very high sensitivity, make this novel detection method an attractive inspection option for advanced memory devices.

  9. Mask blank particle inspection in vacuum environments

    NASA Astrophysics Data System (ADS)

    Sekine, Akihiko; Nagahama, Hiroyuki; Tojo, Toru; Akeno, Kiminobu; Hirano, Ryoichi

    2002-10-01

    The mask blank surface inspection system for the electron beam mask writing system (EB mask writer) has developed. This system, that has the small vacuum chamber attachable to EB mask writer, inspects a mask blank that is just before EB writing in vacuum environments. It can inspect whole area of the 230mm mask at 0.3micrometer sensitivity. It also can perform fast inspection by applying the original scanning algorithm for the laser beam. It has the wide detective range from 0.3 to 2.0 micrometers of particle size. It can distinguish sizes of particles in that range. The auto focus function is most important factor for maintaining the sensitivity.

  10. Next-generation lithography mask inspection

    NASA Astrophysics Data System (ADS)

    Bareket, Noah; Biellak, Steve; Pettibone, Donald W.; Stokowski, Stanley E.

    2000-07-01

    KLA-Tencor and industry partners are collaborating on a project for developing early capabilities of inspecting NGL masks. The project, partially funded by NIST as part of the ATP program, is focusing on building a research tool that will provide experimental data for development of a production capable tool. Some of the key technical issues include contrast in transmission and reflection, defect sources and types, and maintaining mask cleanliness in the absence of pellicles. The masks need to be inspected at multiple process stages, starting with unpatterned substrates, and ending with the pattern inspection. System issues include defect sensitivity and inspection time, which need to be balanced.

  11. Practical mask inspection system with printability and pattern priority verification

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Hideo; Ozaki, Fumio; Takahara, Kenichi; Inoue, Takafumi; Kikuiri, Nobutaka

    2011-05-01

    Through the four years of study in Association of Super-Advanced Electronics Technologies (ASET) on reducing mask manufacturing Turn Around Time (TAT) and cost, we have been able to establish a technology to improve the efficiency of the review process by applying a printability verification function that utilizes computational lithography simulations to analyze defects detected by a high-resolution mask inspection system. With the advent of Source-Mask Optimization (SMO) and other technologies that extend the life of existing optical lithography, it is becoming extremely difficult to judge a defect only by the shape of a mask pattern, while avoiding pseudo-defects. Thus, printability verification is indispensable for filtering out nuisance defects from high-resolution mask inspection results. When using computational lithography simulations to verify printability with high precision, the image captured by the inspection system must be prepared with extensive care. However, for practical applications, this preparation process needs to be simplified. In addition, utilizing Mask Data Rank (MDR) to vary the defect detection sensitivity according to the patterns is also useful for simultaneously inspecting minute patterns and avoiding pseudo-defects. Combining these two technologies, we believe practical mask inspection for next generation lithography is achievable. We have been improving the estimation accuracy of the printability verification function through discussion with several customers and evaluation of their masks. In this report, we will describe the progress of these practical mask verification functions developed through customers' evaluations.

  12. Inspection of lithographic mask blanks for defects

    DOEpatents

    Sommargren, Gary E.

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  13. EUVL mask inspection at Hydrogen Lyman Alpha

    NASA Astrophysics Data System (ADS)

    Jota, Thiago S.; Milster, Tom D.

    2012-11-01

    Mask inspection is an outstanding challenge for Extreme Ultra-Violet Lithography (EUVL). The purpose of this investigation is to compare imaging characteristics of ArF and KrF inspection sources to imaging characteristics using a source at the Lyman-alpha line of Hydrogen at 121.6nm (HLA). HLA provides a raw resolution improvement of 37% to ArF and 51% to KrF, based on proportional wavelength scaling. The HLA wavelength is in an atmospheric transmission window, so a vacuum environment is not required. Our comparison uses rigorous vector imaging techniques to simulate partially coherent illumination schemes and reasonably accurate mask material properties and dimensions. Contrast is evaluated for representative spatial frequencies. Imaging and detection of defects are also considered with NILS and MEEF. The goal is high throughput inspection with maximum resolution, contrast, and sensitivity.

  14. Computational mask defect review for contamination and haze inspections

    NASA Astrophysics Data System (ADS)

    Morgan, Paul; Rost, Daniel; Price, Daniel; Corcoran, Noel; Satake, Masaki; Hu, Peter; Peng, Danping; Yonenaga, Dean; Tolani, Vikram; Wolf, Yulian; Shah, Pinkesh

    2013-09-01

    As optical lithography continues to extend into sub-0.35 k1 regime, mask defect inspection and subsequent review has become tremendously challenging, and indeed the largest component to mask manufacturing cost. The routine use of various resolution enhancement techniques (RET) have resulted in complex mask patterns, which together with the need to detect even smaller defects due to higher MEEFs, now requires an inspection engineer to use combination of inspection modes. This is achieved in 193nm AeraTM mask inspection systems wherein masks are not only inspected at their scanner equivalent aerial exposure conditions, but also at higher Numerical Aperture resolution, and special reflected-light, and single-die contamination modes, providing better coverage over all available patterns, and defect types. Once the required defects are detected by the inspection system, comprehensively reviewing and dispositioning each defect then becomes the Achilles heel of the overall mask inspection process. Traditionally, defects have been reviewed manually by an operator, which makes the process error-prone especially given the low-contrast in the convoluted aerial images. Such manual review also limits the quality and quantity of classifications in terms of the different types of characterization and number of defects that can practically be reviewed by a person. In some ways, such manual classification limits the capability of the inspection tool itself from being setup to detect smaller defects since it often results in many more defects that need to be then manually reviewed. Paper 8681-109 at SPIE Advanced Lithography 2013 discussed an innovative approach to actinic mask defect review using computational technology, and focused on Die-to-Die transmitted aerial and high-resolution inspections. In this approach, every defect is characterized in two different ways, viz., quantitatively in terms of its print impact on wafer, and qualitatively in terms of its nature and origin in

  15. Wafer plane inspection for advanced reticle defects

    NASA Astrophysics Data System (ADS)

    Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

    2008-05-01

    Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

  16. Advanced Mask Aligner Lithography (AMALITH)

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna

    2015-03-01

    Mask aligner lithography is very attractive for less-critical lithography layers and is widely used for LED, display, CMOS image sensor, micro-fluidics and MEMS manufacturing. Mask aligner lithography is also a preferred choice the semiconductor back-end for 3D-IC, TSV interconnects, advanced packaging (AdP) and wafer-level-packaging (WLP). Mask aligner lithography is a mature technique based on shadow printing and has not much changed since the 1980s. In shadow printing lithography a geometric pattern is transferred by free-space propagation from a photomask to a photosensitive layer on a wafer. The inherent simplicity of the pattern transfer offers ease of operation, low maintenance, moderate capital expenditure, high wafers-per-hour (WPH) throughput, and attractive cost-of-ownership (COO). Advanced mask aligner lithography (AMALITH) comprises different measures to improve shadow printing lithography beyond current limits. The key enabling technology for AMALITH is a novel light integrator systems, referred to as MO Exposure Optics® (MOEO). MOEO allows to fully control and shape the properties of the illumination light in a mask aligner. Full control is the base for accurate simulation and optimization of the shadow printing process (computational lithography). Now photolithography enhancement techniques like customized illumination, optical proximity correction (OPC), phase masks (AAPSM), half-tone lithography and Talbot lithography could be used in mask aligner lithography. We summarize the recent progress in advanced mask aligner lithography (AMALITH) and discuss possible measures to further improve shadow printing lithography.

  17. A Dual-Mode Actinic EUV Mask Inspection Tool

    SciTech Connect

    Liu, Y; Barty, A; Gullikson, E; S.Taylor, J; Liddle, J A; Wood, O

    2005-03-21

    To qualify the performance of non-actinic inspection tools, a novel EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron facility at Lawrence Berkeley National Laboratory. Similar to the older generation actinic mask inspection tool, the new system can operate in scanning mode, when mask blanks are scanned for defects using 13.5-nm in-band radiation to identify and map all locations on the mask that scatter a significant amount of EUV light. By modifying and optimizing beamline optics (11.3.2 at ALS) and replacing K-B focusing mirrors with a high quality Schwarzschild illuminator, the new system achieves an order of magnitude improvement on in-band EUV flux density at the mask, enabling faster scanning speed and higher sensitivity to smaller defects. Moreover, the system can also operate in imaging mode, when it becomes a zone-plate-based full-field EUV microscope with spatial resolution better than 100 nm. The microscope utilizes an off-axis setup, making it possible to obtain bright field images over a field-of-view of 5 x 5 {micro}m.

  18. Evaluation of EUVL mask pattern defect inspection using 199nm inspection tool with super-resolution method

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Nishiyama, Yasushi; Suga, Osamu; Arisawa, Yukiyasu; Hashimoto, Hideaki; Takahara, Kenichi; Usuda, Kinya; Kikuiri, Nobutaka; Hirano, Ryoichi

    2009-04-01

    In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

  19. Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Arisawa, Yukiyasu; Suga, Osamu; Hashimoto, Hideaki; Saito, Masanori; Takeda, Masaya; Kikuiri, Nobutaka; Hirano, Ryoichi

    2009-10-01

    In this paper, we will report on our experimental results on the impact of inspection system optics on mask defect detection sensitivity. We evaluated the capability of detecting defects on the EUVL masks by using a new inspection tool (NPI6000EUVα) made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect mask with LR-TaBN absorber was used which had various sized opaque and clear extension defects on hp-180nm, hp-128nm, and hp-108nm line and space patterns. According to the analysis, to obtain optimum sensitivity for various types of defects, using both C- and P-polarized illumination conditions were found to be effective. At present, sufficient defect-detection sensitivity is achieved for opaque and clear extension defects in hp128nm (hp32nm at wafer). For hp108nm (hp27nm at wafer), using both C- and P- polarized illumination is effective. However, further developments in defect-detection sensitivity are necessary.

  20. A new approach for defect inspection on large area masks

    NASA Astrophysics Data System (ADS)

    Scheuring, Gerd; Döbereiner, Stefan; Hillmann, Frank; Falk, Günther; Brück, Hans-Jürgen

    2007-02-01

    Besides the mask market for IC manufacturing, which mainly uses 6 inch sized masks, the market for the so called large area masks is growing very rapidly. Typical applications of these masks are mainly wafer bumping for current packaging processes, color filters on TFTs, and Flip Chip manufacturing. To expose e.g. bumps and similar features on 200 mm wafers under proximity exposure conditions 9 inch masks are used, while in 300 mm wafer bumping processes (Fig. 1) 14 inch masks are handled. Flip Chip manufacturing needs masks up to 28 by 32 inch. This current maximum mask dimension is expected to hold for the next 5 years in industrial production. On the other hand shrinking feature sizes, just as in case of the IC masks, demand enhanced sensitivity of the inspection tools. A defect inspection tool for those masks is valuable for both the mask maker, who has to deliver a defect free mask to his customer, and for the mask user to supervise the mask behavior conditions during its lifetime. This is necessary because large area masks are mainly used for proximity exposures. During this process itself the mask is vulnerable by contacting the resist on top of the wafers. Therefore a regular inspection of the mask after 25, 50, or 100 exposures has to be done during its whole lifetime. Thus critical resist contamination and other defects, which lead to yield losses, can be recognized early. In the future shrinking feature dimensions will require even more sensitive and reliable defect inspection methods than they do presently. Besides the sole inspection capability the tools should also provide highly precise measurement capabilities and extended review options.

  1. High speed mask inspection data prep flow based on pipelining

    NASA Astrophysics Data System (ADS)

    Hung, Dan; Morales, Domingo; Canepa, Juan Pablo; Kim, Stephen; Liu, Po; Sier, Jean-Paul; LoPresti, Patrick

    2011-11-01

    Mask manufacturers are continuously challenged as a result of the explosive growth in mask pattern data volume. This paper presents a new pipelined approach to mask data preparation for inspection that significantly reduces the data preparation times compared to the conventional flows used today. The focus of this approach minimizes I/O bottlenecks and allows for higher throughput on computer clusters. This solution is optimized for the industry standard OASIS.MASK format. These enhancements in the data processing flow, along with optimizations in the data preparation system architecture, offer a more efficient and highly scalable solution for mask inspection data preparation.

  2. Method and apparatus for inspecting an EUV mask blank

    DOEpatents

    Goldberg, Kenneth A.

    2005-11-08

    An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

  3. Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Gallagher, Emily; Seki, Kazunori; McIntyre, Gregory; Konishi, Toshio; Kodera, Yutaka; Redding, Vincent

    2013-06-01

    EUV wavelength inspection tools are several years away from product release. Until then, the EUV Lithography (EUVL) community faces the challenge of inspecting EUV masks at non-actinic wavelengths. It is critical to understand how to improve mask inspectability and defect sensitivity. The absorber stack is one contributor, since changing the film stack modifies image contrast. To study the effect, masks were fabricated from three different film stacks on which the thickness of the low reflective and absorber layers vary. These three absorbers are identified in this paper as Type A, Type B and Type C. All blanks had the same Ru-capped multi-layer substrate beneath the absorber stack. Inspection contrast, defect sensitivity and inspectability were measured on a 193nm wavelength inspection tool. The focus of this paper will be on inspection at the 193nm wavelength; however, simulated wafer results at the 13.5 nm EUV exposure wavelength will be included to anchor the relevance of the mask inspection results. A comparison of the different absorber stacks, the ability to detect defects on the various masks, and how defects on these substrates prints on wafer will be provided. This work addresses the gap between EUVL mask inspection and wafer defect printability and how the two views differ relative to various absorber stacks.

  4. Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging

    NASA Astrophysics Data System (ADS)

    Mangat, Pawitter; Verduijn, Erik; Wood, Obert R.; Benk, Markus P.; Wojdyla, Antoine; Goldberg, Kenneth A.

    2015-07-01

    Despite significant enhancements in defect detection using optical and e-beam methodology, the smaller length scales and increasing challenges of future technology nodes motivate ongoing research into the need and associated cost of actinic inspection for EUV masks. This paper reports an extensive study of two EUV patterned masks, wherein the mask blank defectivity was characterized using optical (mask and wafer) methods and bright-field mask imaging (using the SHARP actinic microscope) of previously identified blank defects. We find that the bright field actinic imaging tool microscope captures and images many defects that are not seen by the automated optical inspection of patterned masks and printed wafers. In addition, actinic review reveals the impact of multilayer damage and depicts the printability profile which can be used as an added metric to define the patterned mask repair and defect compensation strategies.

  5. Improve mask inspection capacity with Automatic Defect Classification (ADC)

    NASA Astrophysics Data System (ADS)

    Wang, Crystal; Ho, Steven; Guo, Eric; Wang, Kechang; Lakkapragada, Suresh; Yu, Jiao; Hu, Peter; Tolani, Vikram; Pang, Linyong

    2013-09-01

    As optical lithography continues to extend into low-k1 regime, resolution of mask patterns continues to diminish. The adoption of RET techniques like aggressive OPC, sub-resolution assist features combined with the requirements to detect even smaller defects on masks due to increasing MEEF, poses considerable challenges for mask inspection operators and engineers. Therefore a comprehensive approach is required in handling defects post-inspections by correctly identifying and classifying the real killer defects impacting the printability on wafer, and ignoring nuisance defect and false defects caused by inspection systems. This paper focuses on the results from the evaluation of Automatic Defect Classification (ADC) product at the SMIC mask shop for the 40nm technology node. Traditionally, each defect is manually examined and classified by the inspection operator based on a set of predefined rules and human judgment. At SMIC mask shop due to the significant total number of detected defects, manual classification is not cost-effective due to increased inspection cycle time, resulting in constrained mask inspection capacity, since the review has to be performed while the mask stays on the inspection system. Luminescent Technologies Automated Defect Classification (ADC) product offers a complete and systematic approach for defect disposition and classification offline, resulting in improved utilization of the current mask inspection capability. Based on results from implementation of ADC in SMIC mask production flow, there was around 20% improvement in the inspection capacity compared to the traditional flow. This approach of computationally reviewing defects post mask-inspection ensures no yield loss by qualifying reticles without the errors associated with operator mis-classification or human error. The ADC engine retrieves the high resolution inspection images and uses a decision-tree flow to classify a given defect. Some identification mechanisms adopted by ADC to

  6. Accurate mask model for advanced nodes

    NASA Astrophysics Data System (ADS)

    Zine El Abidine, Nacer; Sundermann, Frank; Yesilada, Emek; Ndiaye, El Hadji Omar; Mishra, Kushlendra; Paninjath, Sankaranarayanan; Bork, Ingo; Buck, Peter; Toublan, Olivier; Schanen, Isabelle

    2014-07-01

    Standard OPC models consist of a physical optical model and an empirical resist model. The resist model compensates the optical model imprecision on top of modeling resist development. The optical model imprecision may result from mask topography effects and real mask information including mask ebeam writing and mask process contributions. For advanced technology nodes, significant progress has been made to model mask topography to improve optical model accuracy. However, mask information is difficult to decorrelate from standard OPC model. Our goal is to establish an accurate mask model through a dedicated calibration exercise. In this paper, we present a flow to calibrate an accurate mask enabling its implementation. The study covers the different effects that should be embedded in the mask model as well as the experiment required to model them.

  7. Scanning scattering contrast microscopy for actinic EUV mask inspection

    NASA Astrophysics Data System (ADS)

    Mohacsi, I.; Helfenstein, P.; Rajendran, R.; Ekinci, Y.

    2016-03-01

    Actinic mask inspection for EUV lithography with targeted specification of sensitivity and throughput is a big challenge and effective solutions are needed. We present a novel method for actinic mask inspection, i.e. scanning scattering contrast microscopy. In this method the EUV mask is scanned with a beam of relatively small spot size and the scattered light is recorded with a pixel detector. Since the mask layout is known, the scattering profile of a defect-free mask at the detector can be calculated. The signal between the measured and calculated signal provides the deviation between the real mask and its ideal counterpart and a signal above a certain threshold indicates the existence of a defect within the illumination area. Dynamic software filtering helps to suppress strong diffraction from defect free structures and allows registration of faint defects with high sensitivity. With the continuous scan of the whole mask area, a defect map can be obtained with high throughput. Therefore, we believe that this method has the potential of providing an effective solution for actinic mask inspection. Here we discuss the basic principles of the method, present proof-of-principle experiments, describe the basic components of a feasible stand-alone tool and present early results of the performance estimations of such a tool.

  8. Electron beam inspection of 16nm HP node EUV masks

    NASA Astrophysics Data System (ADS)

    Shimomura, Takeya; Narukawa, Shogo; Abe, Tsukasa; Takikawa, Tadahiko; Hayashi, Naoya; Wang, Fei; Ma, Long; Lin, Chia-Wen; Zhao, Yan; Kuan, Chiyan; Jau, Jack

    2012-11-01

    EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing

  9. The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Nishiyama, Yasushi; Suga, Osamu; Terasawa, Tsuneo; Arisawa, Yukiyasu; Hashimoto, Hideaki; Kameya, Norio; Takeda, Masaya; Kikuiri, Nobutaka; Hirano, Ryoichi; Hirono, Masatoshi

    2008-10-01

    In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

  10. Through-pellicle defect inspection of EUV masks using an ArF-based inspection tool

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.; Broadbent, William; Wylie, Mark; Felix, Nelson; Corliss, Daniel

    2016-03-01

    The use of EUV photomasks in a semiconductor manufacturing environment requires their periodic inspection to ensure they are continually free of defects that could impact device yield. Defects typically occur from fall-on particles or from surface degradation such as "haze". The proposed use of a polycrystalline-based EUV pellicle to prevent fall-on particles would preclude periodic through-pellicle mask defect inspection using e-beam, as well as, DUV inspection tools (the pellicle is opaque at DUV wavelengths). Thus, to use these types of defect inspection tools would require removal of the EUV pellicle before inspection. After inspection, the pellicle would need to be re-attached and the mask re-qualified using a test wafer, thus causing expense and delays. While EUV-wavelength inspection tools could inspect through such a pellicle precluding the need to remove the pellicle, these tools are not likely to be available in the commercial marketplace for many years. An alternate EUV pellicle material has been developed that is semi-transparent to 193nm wavelengths, thus allowing through-pellicle inspection using existing ArF-based, or other 193nm wavelength mask inspection tools. This eliminates the requirement to remove the pellicle for defect inspection and the associated time and expense. In this work, we will conduct an initial evaluation of through-pellicle EUV mask defect inspection using an existing 193nm mask inspection tool. This initial evaluation will include durability of the pellicle to defect inspection, and impact of the pellicle on inspection tool performance.

  11. Actinic Mask Inspection at the ALS Initial Design Review

    SciTech Connect

    Barty, A; Chapman, H; Sweeney, D; Levesque, R; Bokor, J; Gullikson, E; Jong, S; Liu, Y; Yi, M; Denbeaux, G; Goldberg, K; Naulleau, P; Denham, P; Rekawa, S; Baston, P; Tackaberry, R; Barale, P

    2003-03-05

    This report is the first milestone report for the actinic mask blank inspection project conducted at the VNL, which forms sub-section 3 of the Q1 2003 mask blank technology transfer program at the VNL. Specifically this report addresses deliverable 3.1.1--design review and preliminary tool design. The goal of this project is to design an actinic mask inspection tool capable of operating in two modes: high-speed scanning for the detection of multilayer defects (inspection mode), and a high-resolution aerial image mode in which the image emulates the imaging illumination conditions of a stepper system (aerial image or AIM mode). The purpose and objective of these two modes is as follows: (1) Defect inspection mode--This imaging mode is designed to scan large areas of the mask for defects EUV multilayer coatings. The goal is to detect the presence of multilayer defects on a mask blank and to store the co-ordinates for subsequent review in AIM mode, thus it is not essential that the illumination and imaging conditions match that of a production stepper. Potential uses for this imaging mode include: (a) Correlating the results obtained using actinic inspection with results obtained using other non-EUV defect inspection systems to verify that the non-EUV scanning systems are detecting all critical defects; (b) Gaining sufficient information to associate defects with particular processes, such as various stages of the multilayer deposition or different modes of operation of the deposition tool; and (c) Assessing the density and EUV impact of surface and multilayer anomalies. Because of the low defect density achieved using current multilayer coating technology it is necessary to be able to efficiently scan large areas of the mask in order to obtain sufficient statistics for use in cross-correlation experiments. Speed of operation as well as sensitivity is therefore key to operation in defect inspection mode. (2) Aerial Image Microscope (AIM) mode--In AIM mode the tool is

  12. Method and apparatus for inspecting reflection masks for defects

    DOEpatents

    Bokor, Jeffrey; Lin, Yun

    2003-04-29

    An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

  13. EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection

    NASA Astrophysics Data System (ADS)

    Bonam, Ravi; Tien, Hung-Yu; Chou, Acer; Meli, Luciana; Halle, Scott; Wu, Ivy; Huang, Xiaoxia; Lei, Chris; Kuan, Chiyan; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack; Qi, Zhengqing John; Badger, Karen; Turley, Christina; Rankin, Jed

    2016-03-01

    Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM).1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related infrastructure is currently unavailable.3, 4 Due to current mask structure and unavailability of a pellicle, a comprehensive strategy to qualify (native defects) and monitor (adder defects) defectivity on mask and wafer is required for implementing EUV Lithography in High Volume Manufacturing. In this work, we assess multiple strategies for mask and wafer defect inspection including a two-fold solution to leverage resolution of e-beam inspection along with throughput of optical inspection are evaluated. Defect capture rates for inspections based on full-die, critical areas based on priority and hotspots based on design and prior inspection data are evaluated. Each strategy has merits and de-merits, particularly related to throughput, effective die coverage and computational overhead. A production ready EUV Exposure tool was utilized to perform exposures at the IBM EUV Center of Excellence in Albany, NY for EUV Lithography Development along with a fully automated line of EUV Mask Infrastructure tools. We will present strategies considered in this study and discuss respective results. The results from the study indicate very low transfer rate of defect detection events from optical mask inspection. They also suggest a hybrid strategy of utilizing both optical and e-beam inspection can provide a comprehensive defect detection which can be employed in High Volume Manufacturing.

  14. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  15. Actinic EUV mask inspection beyond 0.25 NA

    SciTech Connect

    Goldberg, Kenneth A.; Mochi, Iacopo; Anderson, Erik H.; Rekawa, Seno. B.; Kemp, Charles D.; Huh, S.; Han, H.-S.; Naulleau, P.; Huh, S.

    2008-03-24

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is an EUV-wavelength mask inspection microscope designed for direct aerial image measurements, and pre-commercial EUV mask research. Operating on a synchrotron bending magnet beamline, the AIT uses an off-axis Fresnel zoneplate lens to project a high-magnification EUV image directly onto a CCD camera. We present the results of recent system upgrades that have improved the imaging resolution, illumination uniformity, and partial coherence. Benchmarking tests show image contrast above 75% for 100-nm mask features, and significant improvements and across the full range of measured sizes. The zoneplate lens has been replaced by an array of user-selectable zoneplates with higher magnification and NA values up to 0.0875, emulating the spatial resolution of a 0.35-NA 4x EUV stepper. Illumination uniformity is above 90% for mask areas 2-{micro}m-wide and smaller. An angle-scanning mirror reduces the high coherence of the synchrotron beamline light source giving measured {sigma} values of approximately 0.125 at 0.0875 NA.

  16. Benchmarking EUV mask inspection beyond 0.25 NA

    SciTech Connect

    Goldberg, Kenneth A.; Mochi, Iacopo; Anderson, Erik H.; Rekawa, Seno B.; Kemp, Charles D.; Huh, S.; Han, H.-S.; Naulleau, P.; Gunion, R.F.

    2008-09-18

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is an EUV-wavelength mask inspection microscope designed for direct aerial image measurements, and pre-commercial EUV mask research. Operating on a synchrotron bending magnet beamline, the AIT uses an off-axis Fresnel zoneplate lens to project a high-magnification EUV image directly onto a CCD camera. We present the results of recent system upgrades that have improved the imaging resolution, illumination uniformity, and partial coherence. Benchmarking tests show image contrast above 75% for 100-nm mask features, and significant improvements and across the full range of measured sizes. The zoneplate lens has been replaced by an array of user-selectable zoneplates with higher magnification and NA values up to 0.0875, emulating the spatial resolution of a 0.35-NA 4 x EUV stepper. Illumination uniformity is above 90% for mask areas 2-{micro}m-wide and smaller. An angle-scanning mirror reduces the high coherence of the synchrotron beamline light source giving measured {sigma} values of approximately 0.125 at 0.0875 NA.

  17. Performance in practical use of actinic EUVL mask blank inspection

    NASA Astrophysics Data System (ADS)

    Yamane, Takeshi; Kim, Yongdae; Takagi, Noriaki; Terasawa, Tsuneo; Ino, Tomohisa; Suzuki, Tomohiro; Miyai, Hiroki; Takehisa, Kiwamu; Kusunose, Haruhiko

    2014-07-01

    A high-volume manufacturing (HVM) actinic blank inspection (ABI) prototype has been developed, of which the inspection capability for a native defect was evaluated. An analysis of defect signal intensity (DSI) analysis showed that the DSI varied as a result of mask surface roughness. Operating the ABI under a review mode reduced that variation by 71 %, and therefore this operation was made available for precise DSI evaluation. The result also indicated that the defect capture rate was influenced by the DSI variation caused by mask surface roughness. A mask blank was inspected three times by the HVM ABI prototype, and impact of the detected native defects on wafer CD was evaluated. There was observed a pronounced relationship between the DSI and wafer CD; and this means that the ABI tool could detect wafer printable defects. Using the total DSI variation, the capture rate of the smallest defect critical for 16 nm node was estimated to be 93.2 %. This means that most of the critical defects for 16 nm node can be detected with the HVM ABI prototype.

  18. Recent advances in prepellicle mask cleaning

    NASA Astrophysics Data System (ADS)

    Plambeck, Bert F.; Cerio, Mark D.; Reynolds, James A.

    1990-06-01

    Cleaning of photomasks prior to pelliclizatlon Is the most demanding of all mask cleaning operations. A single particle found under a pellicle can lead to costly and time consuming repelliclization. Improved stepper resolution and automatic post pellicle inspection systems are making the requirement even more difficult to meet. Careful anal ysi s of parti culate sou rces an d clean i n g p rocesses b y Solid State Equipment Corporation have lead to the evolution of the SSEC Model 156SC which has proven to be effective as a sub micron prepellicle mask cleaner. It uses a combination of brush surfactant high pressure water static control fluid and rapid drying to achieve superior cleaning results. In an effort to meet their cleaning requirements In a cost effective manner DuPont Photomasks has installed this system in their San Jose Facility. The system design and the evaluation techniques are described. Some experimental data is presented.

  19. Advances in inspection automation

    NASA Astrophysics Data System (ADS)

    Weber, Walter H.; Mair, H. Douglas; Jansen, Dion; Lombardi, Luciano

    2013-01-01

    This new session at QNDE reflects the growing interest in inspection automation. Our paper describes a newly developed platform that makes the complex NDE automation possible without the need for software programmers. Inspection tasks that are tedious, error-prone or impossible for humans to perform can now be automated using a form of drag and drop visual scripting. Our work attempts to rectify the problem that NDE is not keeping pace with the rest of factory automation. Outside of NDE, robots routinely and autonomously machine parts, assemble components, weld structures and report progress to corporate databases. By contrast, components arriving in the NDT department typically require manual part handling, calibrations and analysis. The automation examples in this paper cover the development of robotic thickness gauging and the use of adaptive contour following on the NRU reactor inspection at Chalk River.

  20. Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

    2015-07-01

    High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

  1. High quality mask storage in an advanced Logic-Fab

    NASA Astrophysics Data System (ADS)

    Jähnert, Carmen; Fritsche, Silvio

    2012-02-01

    High efficient mask logistics as well as safe and high quality mask storage are essential requirements within an advanced lithography area of a modern logic waferfab. Fast operational availability of the required masks at the exposure tool with excellent mask condition requires a safe mask handling, safeguarding of high mask quality over the whole mask usage time without any quality degradation and an intelligent mask logistics. One big challenge is the prevention of haze on high advanced phase shift masks used in a high volume production line for some thousands of 248nm or 193nm exposures. In 2008 Infineon Dresden qualified a customer specific developed semi-bare mask storage system from DMSDynamic Micro Systems in combination with a high advanced mask handling and an interconnected complex logistic system. This high-capacity mask storage system DMS M1900.22 for more than 3000 masks with fully automated mask and box handling as well as full-blown XCDA purge has been developed and adapted to the Infineon Lithotoollandscape using Nikon and SMIF reticle cases. Advanced features for ESD safety and mask security, mask tracking via RFID and interactions with the exposure tools were developed and implemented. The stocker is remote controlled by the iCADA-RSM system, ordering of the requested mask directly from the affected exposure tool allows fast access. This paper discusses the advantages and challenges for this approach as well as the practical experience gained during the implementation of the new system which improves the fab performance with respect to mask quality, security and throughput. Especially the realization of an extremely low and stable humidity level in addition with a well controlled air flow at each mask surface, preventing masks from haze degradation and particle contamination, turns out to be a notable technical achievement. The longterm stability of haze critical masks has been improved significantly. Relevant environmental parameters like

  2. High-throughput parallel SPM for metrology, defect, and mask inspection

    NASA Astrophysics Data System (ADS)

    Sadeghian, H.; Herfst, R. W.; van den Dool, T. C.; Crowcombe, W. E.; Winters, J.; Kramer, G. F. I. J.

    2014-10-01

    Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.

  3. Mask pattern recovery by level set method based inverse inspection technology (IIT) and its application on defect auto disposition

    NASA Astrophysics Data System (ADS)

    Park, Jin-Hyung; Chung, Paul D. H.; Jeon, Chan-Uk; Cho, Han Ku; Pang, Linyong; Peng, Danping; Tolani, Vikram; Cecil, Tom; Kim, David; Baik, KiHo

    2009-10-01

    At the most advanced technology nodes, such as 32nm and 22nm, aggressive OPC and Sub-Resolution Assist Features (SRAFs) are required. However, their use results in significantly increased mask complexity, making mask defect disposition more challenging than ever. This paper describes how mask patterns can first be recovered from the inspection images by applying patented algorithms using Level Set Methods. The mask pattern recovery step is then followed by aerial/wafer image simulation, the results of which can be plugged into an automated mask defect disposition system based on aerial/wafer image. The disposition criteria are primarily based on wafer-plane CD variance. The system also connects to a post-OPC lithography verification tool that can provide gauges and CD specs, thereby enabling them to be used in mask defect disposition as well. Results on both programmed defects and production defects collected at Samsung mask shop are presented to show the accuracy and consistency of using the Level Set Methods and aerial/wafer image based automated mask disposition.

  4. High-radiance LDP source for mask-inspection application

    NASA Astrophysics Data System (ADS)

    Teramoto, Yusuke; Santos, Bárbara; Mertens, Guido; Kops, Ralf; Kops, Margarete; von Wezyk, Alexander; Yabuta, Hironobu; Nagano, Akihisa; Shirai, Takahiro; Ashizawa, Noritaka; Nakamura, Kiyotada; Kasama, Kunihiko

    2015-03-01

    Actinic mask inspection manufactures are currently searching for high-radiance EUV sources for their tools. LDP source, which was previously used for lithography purposes, was found to be a good candidate as it can provide sufficient power and radiance. Introduction of new techniques, modified modules and fine tuning of operational conditions (discharge pulse energy, discharge frequency, laser) has brought radiance level to 180 W/mm2/sr at plasma or 145 W/mm2/sr as clean-photon. The source has been modified in such a way to improve modules reliability, lifetime and radiance stability even though there is still a room for further improvement. Size of the source system is much smaller than that of the lithography source. A debris mitigation system has been tested. Optical transmission was improved to 77 % and several 8-nm-thick Ru samples were exposed to evaluate contamination and erosion of optics. Preliminary results show low sputter and deposition rates, which supports sufficiently long lifetime of the optics.

  5. Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Jindal, Vibhu; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

    2015-09-01

    The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow's requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection. To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today's patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the

  6. Improving inspectability of sub-2x-nm node masks with complex SRAF

    NASA Astrophysics Data System (ADS)

    Kang, In Yong; Yoon, Gisung; Lee, Jonghee; Chung, Donghoon Paul; Kim, Byung-Gook; Jeon, Chan-Uk; Inderhees, Gregg; Hutchinson, Trent; Cho, Wonil; Hur, Jiuk

    2013-10-01

    As Moore's Law continues its relentless march toward ever smaller geometries on wafer, lithographers who had been relying on the implementation of a solution using EUV lithography are faced with increasing challenges to meet requirements for printing sub-2x nm half-pitch (HP). The available choices rely on 193 nm DUV immersion lithography, but with decreasing k1 values and thus shrinking process windows. To overcome these limitations, two techniques such as inverse lithography technology (ILT) and source mask optimization (SMO) were introduced by computational OPC scheme. From a mask inspection viewpoint, the impact of both ILT and SMO is similar - both result in photomasks that have a large quantity of sub-resolution assist features (SRAFs). These SRAFs are challenging for mask-makers to pattern with high fidelity and accuracy across a full-field mask, and thus mask inspection is challenged to maintain a high sensitivity level on primary mask features while not suffering from a high nuisance detection rate on the SRAF features. To solve this particular issue, new inspection approach was developed by using computational image calibration based wafer scanner simulation. This paper will be described the new capabilities, which analyzes the aerial image to differentiate between printing and non-printing features, and applying the appropriate sensitivity threshold. All analysis will be shown comparing results with and without the new capabilities, with an emphasis on inspectability improvements and nuisance defect reduction to improve mask cycle time.

  7. Sulfur-free cleaning strategy for advanced mask manufacturing

    NASA Astrophysics Data System (ADS)

    Kindt, Louis; Watts, Andrew; Burnham, Jay; Aaskov, William

    2006-10-01

    Existing cleaning technology using sulfuric acid based chemistry has served the mask industry quite well over the years. However, the existence of residue on mask surfaces is becoming more and more of a problem at the high energy wavelengths used in lithography tool for wafer manufacturing. This is evident by the emergence of sub-pellicle defect growth and backside hazing issues. A large source of residual contamination on the surface of masks is from the mask manufacturing process, particularly the cleaning portion involving sulfuric acid. Cleaning strategies can be developed that eliminate the use of sulfuric acid in the cleaning process for advanced photomasks and alternative processes can be used for cleaning masks at various stages of the manufacturing process. Implementation of these new technologies into manufacturing will be discussed as will the resulting improvements, advantages, and disadvantages over pre-existing mask cleaning processes.

  8. Advanced mask aligner lithography: new illumination system.

    PubMed

    Voelkel, Reinhard; Vogler, Uwe; Bich, Andreas; Pernet, Pascal; Weible, Kenneth J; Hornung, Michael; Zoberbier, Ralph; Cullmann, Elmar; Stuerzebecher, Lorenz; Harzendorf, Torsten; Zeitner, Uwe D

    2010-09-27

    A new illumination system for mask aligner lithography is presented. The illumination system uses two subsequent microlens-based Köhler integrators. The second Köhler integrator is located in the Fourier plane of the first. The new illumination system uncouples the illumination light from the light source and provides excellent uniformity of the light irradiance and the angular spectrum. Spatial filtering allows to freely shape the angular spectrum to minimize diffraction effects in contact and proximity lithography. Telecentric illumination and ability to precisely control the illumination light allows to introduce resolution enhancement technologies (RET) like customized illumination, optical proximity correction (OPC) and source-mask optimization (SMO) in mask aligner lithography. PMID:20940992

  9. Comparative Evaluation of Mask Production CAR Development Process with Stepwise Defect Inspection

    NASA Astrophysics Data System (ADS)

    Jeong, Woo-Gun; Lee, Jung-Kwan; Park, Dong-Il; Park, Eu-Sang; Lee, Jong-Hwa; Seo, Sun-Kyu; Lee, Dong-Heok; Kim, Jin-Min; Choi, Sang-Soo; Jeong, Soo-Hong

    2002-12-01

    Chemically amplified resist (CAR) provides superior lithographic performance compared to traditional e-beam resists in production maskmaking. Parameters benefiting the most are contrast, resolution, and sensitivity. In spite of CAR's advantages, defect control and tighter 50KeV e-beam CAR process restrictions are significantly more critical thanks to smaller geometries, tighter CD specifications, and optical proximity correction (OPC) for 90nm node mask technology. Among defect root causes, resist development is considered to be the one of the most important steps because post-development residue can generate printable defects on finished masks. We investigated the CAR development process across different resist development methods, such as binary and fan-type nozzle spin spray, and puddle development. Several high density binary and embedded-attenuated phase shift masks (EAPSMs) with 70% clear area in the main pattern field were evaluated in an effort to identify and contain post-develop defects in a typical mask production flow. Development step process residue was examined at the after-develop inspection (ADI) step and scanning electron microscopy (SEM) was used for individual defect review. The KLA-Tencor SLF77 TeraStar inspection tool was used to inspect patterns after the development, Cr/MoSiON layer dry etch, and clean steps. The effectiveness of the various CAR development methods has been also studied following development, dry etch, and cleaning inspection by using identical binary and EAPSM masks from production. The mechanism and defect source during the stepwise process and inspections were scrutinized and discussed. Experimental results showed that stepwise process inspection was effective in identifying defects and their sources to prevent defects, and in optimizing each process step. It was found that CAR development and dry etch processes are the most important process steps to control defects in CAR-based mask production. Suggested optimized

  10. Wavelength-specific reflections: A decade of EUV actinic mask inspection research

    SciTech Connect

    Goldberg, Kenneth; Mochi, Iacopo

    2010-12-31

    Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV Lithography in particular faces unique challenges. EUV masks resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of 'critical' defects limits the potential effectiveness of DUV inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on EUV masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, we survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, dark field imaging to pattern transfer.

  11. Development of defect inspection and repair systems for EPL mask infrastructure

    NASA Astrophysics Data System (ADS)

    Yamamoto, Jiro; Iriki, Nobuyuki; Arimoto, Hiroshi

    2004-12-01

    Selete is developing a series of defect inspection and repair systems for electron projection lithography (EPL) stencil mask infrastructure, that includes tools and software development, and also verification by EPL exposure systems. The work is carried out in collaboration with Dai Nippon Printing, Toppan Printing and HOYA. A system for defect inspection of EPL stencil mask is developed with TOKYO SEIMITSU and HOLON. Another system for defect repairs is developed with SII NanoTechnology. The performances of these systems need to be verified for their further improvement and optimization. In this paper, we verified a series of defect inspection and repair systems through a sequential process. We can say that EPL mask infrastructure is established and our work has made significant contribution to it.

  12. Mask R&D activities at the Advanced Mask Technology Center

    NASA Astrophysics Data System (ADS)

    Dilger, Markus; Peters, Jan Hendrik

    2004-08-01

    The Advanced Mask Technology Center (AMTC) in Dresden is an equally-owned joint venture of Advanced Micro Devices Inc. (AMD), DuPont Photomasks, Inc. (DPI), and Infineon Technologies AG (Infineon) founded in 2002 to create a world-leading mask R&D center for both DRAM and logic applications. The AMTC's primary focus is research and development of sub-70 nm technologies. While 193 nm lithography will be used for 65 nm design rules and is probable for 45 nm design rules, solutions for sub-45 nm design rules are still being studied. Possible solutions include 193 nm immersion, 157 nm immersion, EUV, and EPL or its variants. The AMTC is actively involved in multiple collaborative projects to develop masks for advanced lithographies. This paper presents a sampling of AMTC's development activities on both conventional and EUV masks. Intensive studies on adequate materials and their properties for the respective technology have been performed with key partners in the field. Masks have been produced and analyzed. New repair processes have been developed for the small structures of future nodes, the printing capabilities have been predicted by AIMS measurements and analyzed with printing experiments at the respective wavelengths. In this talk we will present the latest results of simulations, experiments, handling and tool qualifications performed at the AMTC or with its partners. We will especially focus on our activities for the EUV technology and will present results on material and process development as well as on simulations for soft and hard pellicle induced distortions. For the EUV technology we will present preliminary results from our etching experiment on binary masks. First results on the performance of our new nano-machining RAVE tool will be shown.

  13. Advanced Computed-Tomography Inspection System

    NASA Technical Reports Server (NTRS)

    Harris, Lowell D.; Gupta, Nand K.; Smith, Charles R.; Bernardi, Richard T.; Moore, John F.; Hediger, Lisa

    1993-01-01

    Advanced Computed Tomography Inspection System (ACTIS) is computed-tomography x-ray apparatus revealing internal structures of objects in wide range of sizes and materials. Three x-ray sources and adjustable scan geometry gives system unprecedented versatility. Gantry contains translation and rotation mechanisms scanning x-ray beam through object inspected. Distance between source and detector towers varied to suit object. System used in such diverse applications as development of new materials, refinement of manufacturing processes, and inspection of components.

  14. Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

    SciTech Connect

    Spector, S. J.; White, D. L.; Tennant, D. M.; Ocola, L. E.; Novembre, A. E.; Peabody, M. L.; Wood, O. R. II

    1999-11-01

    We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography. In one method an EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. In the second method, the photoresist is applied to an EUV transparent membrane that is placed in close proximity to the mask and then exposed and developed. Both reflectivity defects and phase defects alter the exposure of the resist, resulting in mounds of resist at defect sites that can then be located by visual inspection. In the direct application method, a higher contrast resist was shown to increase the height of the mounds, thereby improving the sensitivity of the technique. In the membrane method, a holographic technique was used to reconstruct an image of the mask, revealing the presence of very small defects, approximately 0.2 {mu}m in size. The demonstrated clean transfer of phase and amplitude defects to resist features on a membrane will be important when flagging defects in an automatic inspection tool. (c) 1999 American Vacuum Society.

  15. Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders

    NASA Astrophysics Data System (ADS)

    Halle, Scott D.; Meli, Luciana; Delancey, Robert; Vemareddy, Kaushik; Crispo, Gary; Bonam, Ravi; Burkhardt, Martin; Corliss, Daniel

    2015-03-01

    The detection of EUV mask adder defects has been investigated with an optical wafer defect inspection system employing a methodology termed Die-to-"golden" Virtual Reference Die (D2VRD). Both opaque and clear type mask absorber programmed defects were inspected and characterized over a range of defect sizes, down to (4x mask) 40 nm. The D2VRD inspection system was capable of identifying the corresponding wafer print defects down to the limit of the defect printability threshold at approximately 30 nm (1x wafer). The efficacy of the D2VRD scheme on full chip wafer inspection to suppress random process defects and identify real mask defects is demonstrated. Using defect repeater analysis and patch image classification of both the reference die and the scanned die enables the unambiguous identification of mask adder defects.

  16. Investigation of buried EUV mask defect printability using actinic inspection and fast simulation

    SciTech Connect

    Clifford, C. H.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I.; Liang, T.

    2009-06-16

    The fast simulator RADICAL and the Actinic Inspection Tool (AIT) are used in advance of availability of high volume manufacturing quality exposure tools, resists, and masks to assess the expected defect printability levels in production conditions. AIT images are analyzed to qualitatively demonstrate general trends in defect printability: defects smaller than 0.5nm tall on the multilayer surface can cause an unacceptable critical dimension (CD) change, CD change increases for taller defects, and defect printability varies asymmetrically through focus. RADICAL is used to derive quantitative limits for defect size and demonstrate the effects of focus and illumination for 22nm and 16nm dense lines. For 22nm dense lines at best focus a 0.8nm tall defect causes a 10% CD change. For 16nm lines a 0.4nm tall defect causes a 10% CD change. The CD is shown to be more sensitive to buried defects out of focus, but less sensitive to defects in focus if annular or dipole illumination is used.

  17. Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

    2015-03-01

    SEMATECH aims to identify and enable disruptive technologies to meet the ever-increasing demands of semiconductor high volume manufacturing (HVM). As such, a program was initiated in 2012 focused on high-speed e-beam defect inspection as a complement, and eventual successor, to bright field optical patterned defect inspection [1]. The primary goal is to enable a new technology to overcome the key gaps that are limiting modern day inspection in the fab; primarily, throughput and sensitivity to detect ultra-small critical defects. The program specifically targets revolutionary solutions based on massively parallel e-beam technologies, as opposed to incremental improvements to existing e-beam and optical inspection platforms. Wafer inspection is the primary target, but attention is also being paid to next generation mask inspection. During the first phase of the multi-year program multiple technologies were reviewed, a down-selection was made to the top candidates, and evaluations began on proof of concept systems. A champion technology has been selected and as of late 2014 the program has begun to move into the core technology maturation phase in order to enable eventual commercialization of an HVM system. Performance data from early proof of concept systems will be shown along with roadmaps to achieving HVM performance. SEMATECH's vision for moving from early-stage development to commercialization will be shown, including plans for development with industry leading technology providers.

  18. ACTINIC MASK INSPECTION AT THE ALS: RISK REDUCTION ACTIVITIES FOR 2003

    SciTech Connect

    Barty, A; Levesque, R; Ayers, J; Liu, Y; Gullikson, E; Barale, P

    2004-01-05

    This document reports on risk reduction activities performed at the VNL during CY2003 as a part of the Lith-343 actinic inspection project funded by International SEMATECH. The risk reduction activities described in this document comprise deliverable items 3.1.3, 3.1.4, 3.1.5 and 3.1.6 of Amendment 6 to the VNL EUV mask blank technology transfer contract.

  19. Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook

    NASA Astrophysics Data System (ADS)

    Goodwin, Frank; Kearney, Patrick; Kadaksham, Arun J.; Wurm, Stefan

    2013-10-01

    film for the device. In addition to the increase in complexity of the mask, introduction of EUVL requires infrastructure development of new substrate, mask blank, and finished reticle inspection tools and techniques for handling and storage of a mask without a pellicle. This paper will highlight recent advances in the ability to produce pilot line quality EUV mask blanks to meet the near-term requirements and review the existing technology gaps which must be closed to extend the current capability to meet HVM needs. A special focus will be put on substrate and mask blank defect densities; other process and infrastructure challenges will also be discussed.

  20. Aerial Image Microscopes for the Inspection of Defects in EUV Masks

    SciTech Connect

    Barty, A; Taylor, J S; Hudyma, R; Spiller, E; Sweeney, D W; Shelden, G; Urbach, J-P

    2002-10-22

    The high volume inspection equipment currently available to support development of EUV blanks is non-actinic. The same is anticipated for patterned EUV mask inspection. Once potential defects are identified and located by such non-actinic inspection techniques, it is essential to have instrumentation to perform detailed characterization, and if repairs are performed, re-evaluation. The ultimate metric for the acceptance or rejection of a mask due to a defect, is the wafer level impact. Thus measuring the aerial image for the site under question is required. An EUV Aerial Image Microscope (''AIM'') similar to the current AIM tools for 248nm and 193nm exposure wavelength is the natural solution for this task. Due to the complicated manufacturing process of EUV blanks, AIM measurements might also be beneficial to accurately assessing the severity of a blank defect. This is an additional application for an EUV AIM as compared to today's use In recognition of the critical role of an EUV AIM for the successful implementation of EUV blank and mask supply, International SEMATECH initiated this design study with the purpose to define the technical requirements for accurately simulating EUV scanner performance, demonstrating the feasibility to meet these requirements and to explore various technical approaches to building an EUV AIM tool.

  1. Mask characterization for CDU budget breakdown in advanced EUV lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2012-11-01

    As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget

  2. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  3. Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application

    NASA Astrophysics Data System (ADS)

    Huh, Sungmin; Kang, In-Yong; Kim, Sang-Hyun; Seo, Hwan-seok; Kim, Dongwan; Park, Jooon; Kim, Seong-Sue; Cho, Han-Ku; Goldberg, Kenneth; Mochi, Iacopo; Shoki, Tsutomu; Inderhees, Gregg

    2011-04-01

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.

  4. A study on the factors that affect the advanced mask defect verification

    NASA Astrophysics Data System (ADS)

    Woo, Sungha; Jang, Heeyeon; Lee, Youngmo; Kim, Sangpyo; Yim, Donggyu

    2015-10-01

    Defect verification has become significantly difficult to higher technology nodes over the years. Traditional primary method of defect (include repair point) control consists of inspection, AIMS and repair steps. Among them, AIMS process needs various wafer lithography conditions, such as NA, inner/outer sigma, illumination shape and etc. It has a limit to analyze for every layer accurately because AIMS tool uses the physical aperture system. And it requires meticulous management of exposure condition and CD target value which change frequently in advanced mask. We report on the influence of several AIMS parameters on the defect analysis including repair point. Under various illumination conditions with different patterns, it showed the significant correlation in defect analysis results. It is able to analyze defect under certain error budget based on the management specification required for each layer. In addition, it provided us with one of the clues in the analysis of wafer repeating defect. Finally we will present 'optimal specification' for defect management with common AIMS recipe and suggest advanced mask process flow.

  5. NASA Thermographic Inspection of Advanced Composite Materials

    NASA Technical Reports Server (NTRS)

    Cramer, K. Elliott

    2004-01-01

    As the use of advanced composite materials continues to increase in the aerospace community, the need for a quantitative, rapid, in situ inspection technology has become a critical concern throughout the industry. In many applications it is necessary to monitor changes in these materials over an extended period of time to determine the effects of various load conditions. Additionally, the detection and characterization of defects such as delaminations, is of great concern. This paper will present the application of infrared thermography to characterize various composite materials and show the advantages of different heat source types. Finally, various analysis methodologies used for quantitative material property characterization will be discussed.

  6. Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Ohya, Kaoru; Hirano, Ryoichi; Watanabe, Hidehiro

    2016-03-01

    The impact of EUV mask surface conditions on the patterned mask inspection process was investigated. The results of simulations show that the defect detection capability is degraded by the formation of a native oxide film on the surface of a Ru capped multilayer. This effect was assessed by constructing the secondary electron yield (SEY) curves of the EUV mask materials. These experimentally-obtained SEY curves were examined using semi-empirical Monte Carlo simulations. The simulation results demonstrated that a native oxide film increased the SEY, and that this effect varied with film thickness. The results suggest that defect detection capability will vary according to the thickness of the native oxide when employing an inspection system using an electron beam technique. Also of interest is the finding that the thickness of the native oxide film can be ascertained by fitting the SEY curves.

  7. Robotic NDE inspection of advanced solid rocket motor casings

    NASA Technical Reports Server (NTRS)

    Mcneelege, Glenn E.; Sarantos, Chris

    1994-01-01

    The Advanced Solid Rocket Motor program determined the need to inspect ASRM forgings and segments for potentially catastrophic defects. To minimize costs, an automated eddy current inspection system was designed and manufactured for inspection of ASRM forgings in the initial phases of production. This system utilizes custom manipulators and motion control algorithms and integrated six channel eddy current data acquisition and analysis hardware and software. Total system integration is through a personal computer based workcell controller. Segment inspection demands the use of a gantry robot for the EMAT/ET inspection system. The EMAT/ET system utilized similar mechanical compliancy and software logic to accommodate complex part geometries. EMAT provides volumetric inspection capability while eddy current is limited to surface and near surface inspection. Each aspect of the systems are applicable to other industries, such as, inspection of pressure vessels, weld inspection, and traditional ultrasonic inspection applications.

  8. Advances in Low-Defect Multilayers for EUVL Mask Blanks

    SciTech Connect

    Folta, J A; Davidson, J C; Larson, C C; Walton, C C; Kearney, P A

    2002-04-15

    Low-defect multilayer coatings are required to fabricate mask blanks for Extreme Ultraviolet Lithography (EUVL). The mask blanks consist of high reflectance E W multilayers on low thermal expansion substrates. A defect density of 0.0025 printable defects/cm{sup 2} for both the mask substrate and the multilayer is required to provide a mask blank yield of 60%. Current low defect multilayer coating technology allows repeated coating-added defect levels of 0.05/cm{sup 2} for defects greater than 90 nm polystyrene latex sphere (PSL) equivalent size for lots of 20 substrates. Extended clean operation of the coating system at levels below 0.08/cm{sup 2} for 3 months of operation has also been achieved. Two substrates with zero added defects in the quality area have been fabricated, providing an existence proof that ultra low defect coatings are possible. Increasing the ion source-to-target distance from 410 to 560 mm to reduce undesired coating of the ion source caused the defect density to increase to 0.2/cm{sup 2}. Deposition and etching diagnostic witness substrates and deposition pinhole cameras showed a much higher level of ion beam spillover (ions missing the sputter target) than expected. Future work will quantify beam spillover, and test designs to reduce spillover, if it is confirmed to be the cause of the increased defect level. The LDD system will also be upgraded to allow clean coating of standard format mask substrates. The upgrade will confirm that the low defect process developed on Si wafers is compatible with the standard mask format 152 mm square substrates, and will provide a clean supply of EUVL mask blanks needed to support development of EUVL mask patterning processes and clean mask handling technologies.

  9. Microwave discharge plasma production with resonant cavity for EUV mask inspection tool

    NASA Astrophysics Data System (ADS)

    Tashima, Saya; Ohnishi, Masami; Hugrass, Waheed; Sugimoto, Keita; Sakaguchi, Masatugu; Osawa, Hodaka; Nishimura, Hiroaki; Matsukuma, Hiraku

    2015-12-01

    A microwave-discharge-produced plasma source was developed to generate 13.5 nm extreme ultraviolet (EUV) radiation for application as a mask inspection tool. The EUV radiation of a system with a high Q-factor (>3900) resonant cavity and a solid-state oscillator was studied. The gas pressure and microwave power dependences on the EUV radiation for transverse-magnetic mode TM010 and transverse-electric mode TE111 were determined. For the solid-state oscillator, the efficiency of the EUV radiation over the input power was 5.8 times higher than that for a magnetron. EUV radiation of 10 mW/(2πsr) was observed under a gas pressure of 5 Pa and microwave power of 400 W. We expect that more EUV power and a smaller plasma is generated when a magnetic field is applied to confirm the plasma and a facility is operated with an improved system to cool an entire cavity.

  10. Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication

    NASA Astrophysics Data System (ADS)

    Kim, Do Young; Cho, Won Il; Park, Jin Hyung; Chung, Dong Hoon; Cha, Byung Chul; Choi, Seong Woon; Han, Woo Sung; Park, Ki Hun; Kim, Nam Wook; Hess, Carl; Ma, Weimin; Kim, David

    2005-11-01

    As the design rule continues to shrink towards 65nm size and beyond the defect criteria are becoming ever more challenging. Pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now becoming significant yield impacting defects. The intent of this study is to utilize the new generation DUV system to compare Die-to-Die Reflected Light inspection and Die-to-Die Transmitted Light Inspection to increase defect detection for optimization of the 65nm node process. In addition, the ReviewSmart will be implemented to help categorically identify systematic tool and process variations and thus allowing user to expedite the learning process to develop a production worthy 65nm node mask process. The learning will be applied to Samsung's pattern inspection strategy, complementing Transmitted Light Inspection, on critical layers of 65 nm node to gain ability to find defects that adversely affect process window.

  11. Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Amano, Tsuyoshi; Hirano, Ryoichi; Terasawa, Tsuneo; Watanabe, Hidehiro

    2013-04-01

    According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-and-space patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask.

  12. High-radiance LDP source: clean, reliable, and stable EUV source for mask inspection

    NASA Astrophysics Data System (ADS)

    Teramoto, Yusuke; Santos, Bárbara; Mertens, Guido; Kops, Ralf; Kops, Margarete; von Wezyk, Alexander; Bergmann, Klaus; Yabuta, Hironobu; Nagano, Akihisa; Ashizawa, Noritaka; Taniguchi, Yuta; Shirai, Takahiro; Nakamura, Kiyotada; Aoki, Kazuya; Kasama, Kunihiko

    2016-03-01

    High-throughput and -resolution actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. To realize such inspection tools, a high-radiance EUV source is necessary. Ushio's laser-assisted discharge-produced plasma (LDP) source is able to meet industry's requirements in radiance, cleanliness, stability and reliability. Ushio's LDP source has shown the peak radiance at plasma of 180 W/mm2/sr and the area-averaged radiance in a 200-μm-diameter circle behind the debris mitigation system of 120 W/mm2/sr. A new version of the debris mitigation system is in testing phase. Its optical transmission was confirmed to be 73 %, which is 4 % lower than that of the previous version and therefore will be improved. Cleanliness of the system is evaluated by exposing Ru mirrors placed behind the debris mitigation system. Ru sputter rate was proven to be sufficiently low as 3~5 nm/Gpulse at 7 kHz, whereas frequency-dependent sputter rate was 1~3 nm/Gpulse at 5~9 kHz as previously reported. Sn deposition remained very low (< 0.05 nm) and did not grow over time. A new technique to suppress debris was tested and preliminary results were promising. Time-of-flight signal of fast ions was completely suppressed and Ru sputter rate of exposed mirrors at 3 kHz was approximately 1.3 nm/Gpulse, whereas the conventional mitigation system (new version) resulted in Ru sputter rate of 0.7 nm/Gpulse. This new technique also allows increasing the radiance efficiency by 30 %. Stability tests were done at several different discharge frequencies. Pulse energy stability was approximately 10 %. Dose energy stability dropped from approximately 2 % to 0.1 % when feedback control was activated. EUV emission position stability was studied at 3 kHz. Deviation of the plasma center of gravity was 6 μm, which is 3 % of plasma diameter and therefore considered to be negligible. Reliability tests were performed on both R and D and prototype machines and up to 200 hours of non

  13. The use of advanced technology for visual inspection training.

    PubMed

    Gramopadhye, A; Bhagwat, S; Kimbler, D; Greenstein, J

    1998-10-01

    In the past, training with traditional methods was shown to improve inspection performance. However, advances in technology have automated training and revolutionized the way training will be delivered in the future. Examples of such technology include computer-based simulators, digital interactive video, computer-based training, and intelligent tutoring systems. Despite the lower cost and increased availability of computer technology, the application of advanced technology to training within the manufacturing industry and specifically for inspection has been limited. In this vein, a case study is presented which shows how advanced technology along with our basic knowledge of training principles, can be used to develop a computer-based training program for a contact lens inspection task. Improvements due to computer-based inspection training were measured in an evaluation study and are reported. PMID:9703350

  14. Vision Based Autonomous Robotic Control for Advanced Inspection and Repair

    NASA Technical Reports Server (NTRS)

    Wehner, Walter S.

    2014-01-01

    The advanced inspection system is an autonomous control and analysis system that improves the inspection and remediation operations for ground and surface systems. It uses optical imaging technology with intelligent computer vision algorithms to analyze physical features of the real-world environment to make decisions and learn from experience. The advanced inspection system plans to control a robotic manipulator arm, an unmanned ground vehicle and cameras remotely, automatically and autonomously. There are many computer vision, image processing and machine learning techniques available as open source for using vision as a sensory feedback in decision-making and autonomous robotic movement. My responsibilities for the advanced inspection system are to create a software architecture that integrates and provides a framework for all the different subsystem components; identify open-source algorithms and techniques; and integrate robot hardware.

  15. Advanced image placement performance for the current EPL masks

    NASA Astrophysics Data System (ADS)

    Eguchi, Hideyuki; Sugimura, Hiroshi; Koike, Kaoru; Sakaue, Hiroshi; Arimoto, Hiroshi; Ogawa, Kentaro; Susa, Takashi; Kunitani, Shinji; Kurosu, Toshiaki; Yoshii, Takashi; Itoh, Kojiro; Tamura, Akira

    2006-03-01

    We examined two EPL mask fabrication processes to control precisely image placement (IP) on the EPL masks. One is a wafer process using an electrostatic chuck during an e-beam write and another is a membrane process using a mechanical chuck during the e-beam write. In the wafer process, the global IP is corrected during the e-beam write on the basis of the IP data taken with x-y metrology tool. In the membrane process, the global IP is corrected during the e-beam write on the basis of the data taken with the x-y metrology tool and taken in situ with the e-beam writer. The resist and final global IP (3s) of the wafer process is 7.2 nm and 10.6 nm. For the average local IP errors (3s), the local IP of 5.7 nm at the resist step increases to 14.7 nm at the final step due to process-induced distortions. The local IP could be reduced to 6.0 nm by applying the constant scale value to the mask process. In the membrane process, the resist and final global IP (3s) is 15.3 nm and 17.1 nm. With more detectable alignment marks, it would be possible to improve the global IP. For the average local IP errors (3s) of the membrane process, the average resist and final local IP are 6.7 and 7.1 nm which shows no PID. The two approaches proved to control IP more accurately than the conventional one.

  16. Preservice inspection of BWR plants using advanced ISI system

    SciTech Connect

    Shouji, H.; Kobayashi, T.; Nagao, T.

    1994-12-31

    This paper reports experiences of preservice inspections using advanced Inservice Inspection (ISI) systems. The advanced ISI system consists of newly designed automated scanners, a high speed data acquisition/analysis station and automated pipe inspection system. This system has been developed to reduce examination time and radiation dose. The automated scanners are designed light weight and easy handling. A semi-automated inspection system has been used for pipe inspection. It is successful for taking reliable examination data, but not successful to reduce the radiation dose of personnel. For this reason, the automated pipe inspection system has been developed to replace the semi-automated system. The automated pipe inspection system consists of a small scanner, scanner controller and high speed personal computer for data acquisition. The data is analyzed by the data analysis station. The scanner has a light weight body in order to ease handling, and it requires almost the same clearance with manual examination. The PSI were successfully completed in a shorten time period. From this experience, the advanced ISI system will be very useful for ISI, especially reduction of radiation dose of personnel in future.

  17. AIMS D2DB simulation for DUV and EUV mask inspection

    NASA Astrophysics Data System (ADS)

    Peng, Danping; Li, Ying; Satake, Masaki; Hu, Peter; Chen, Jerry; Hsu, S. C.; Lai, Rick; Lin, C. S.; Tuo, Laurent C. C.

    2012-02-01

    AIMS™ Die-to-Die (D2D) is widely used in checking the wafer printability of mask defects for DUV lithography. Two AIMS images, a reference and a defect image, are captured and compared with differences larger than certain tolerances identified as real defects. Since two AIMS images are needed, and since AIMS system time is precious, it is desirable to save image search and capture time by simulating reference images from the OPC mask pattern and AIMS optics. This approach is called Die-to-Database (D2DB). Another reason that D2DB is desirable is in single die mask, where the reference image from another die does not exist. This paper presents our approach to simulate AIMS optics and mask 3D effects. Unlike OPC model, whose major concern is predicting printed CD, AIMS D2DB model must produce simulated images that match measured images across the image field. This requires a careful modeling of all effects that impact the final image quality. We present a vector-diffraction theory that is based on solid theoretical foundations and a general formulation of mask model that are applicable to both rigorous Maxwell solver and empirical model that can capture the mask 3D-effects. We demonstrated the validity of our approach by comparing our simulated image with AIMS machine measured images. We also briefly discuss the necessary changes needed to model EUV optics. Simulation is particularly useful while the industry waits for an actinic EUV-AIMS tool.

  18. Mask inspection microscopy with 13.2 nm table-top laser illumination

    SciTech Connect

    Brizuela, Fernando; Wang, Yong; Brewer, Courtney A.; Pedaci, Francesco; Chao, Weilun; Anderson, Erik H.; Liu, Yanwei; Goldberg, Kenneth A.; Naulleau, Patrick; Wachulak, Przemyslaw; Marconi, Mario C.; Attwood, David T.; Rocca, Jorge J.; Menoni, Carmen S.

    2008-10-14

    We report the demonstration of a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55 {+-} 3 nm. The microscope uses illumination from a table-top EUV laser to acquire aerial images of photolithography masks with a 20 second exposure time. The modulation transfer function of the optical system was characterized.

  19. Advanced high-resolution mask processes using optical proximity correction

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    1999-08-01

    The benefits of incorporating some 'distortion' to the design data in order to produce the desired results on the wafers has been recognized for many years. This 'distortion' has come to be commonly referred to as optical proximity correction (OPC) by the lithography community. In today's era of high throughput laser reticle writing tools, line shortening and corner rounding has forced OPC up the lithography tree from wafer imaging to reticle imaging. With the increasing popularity of 4X systems, the comparatively large spot laser reticle writing systems in the field today need to be extended before being rendered useless for critical reticle requirements due to reticle corner rounding, line shortening and scatter bar resolution. These problems must be resolved in order to extend the use of laser tool for technology node below 0.25 micrometer. Some previous work has been done in adding corner serifs to eliminate corner rounding in contact holes. It was clear from the results that the optimal serifs sizes could be different when patterns were written on different tools. However, there is no clear understanding how the process may affect the outcome. A recent paper by W. Ziegler, et al shows the effect of adding small serifs to line ends on line end shortening based on aerial image and wafer measurement. This paper will discuss the effect of Laser Proximity correction (LPC) and the reticle manufacturing processes on pattern fidelity. CAPROX LPCTM is used to correct for distoritons during the mask exposure. Not only will the impact of lithographic tools on OPC be discussed, but an examination of the effect of wet and dry etched processes on corner rounding, image fidelity, and line end shortening will also be presented.

  20. Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

    NASA Astrophysics Data System (ADS)

    Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

    2011-11-01

    Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle

  1. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  2. Overview of Mask Metrology

    NASA Astrophysics Data System (ADS)

    Rice, Bryan J.; Jindal, Vibhu; Lin, C. C.; Harris-Jones, Jenah; Kwon, Hyuk Joo; Ma, Hsing-Chien; Goldstein, Michael; Chan, Yau-Wai; Goodwin, Frank

    2011-11-01

    Extreme ultraviolet (EUV) lithography is the successor to optical lithography and will enable advanced patterning in semiconductor manufacturing processes down to the 8 nm half pitch technology node and beyond. However, before EUV can successfully be inserted into high volume manufacturing a few challenges must be overcome. Central among these remaining challenges is the requirement to produce "defect free" EUV masks. Mask blank defects have been one of the top challenges in the commercialization of extreme ultraviolet (EUV) lithography. To determine defect sources and devise mitigation solutions, detailed characterization of defects is critical. However, small defects pose challenges in metrology scale-up. SEMATECH has a comprehensive metrology strategy to address any defect larger than a 20 nm core size to obtain solutions for defect-free EUV mask blanks. SEMATECH's Mask Blank Development Center has been working since 2003 to develop the technology to support defect free EUV mask blanks. Since 2003, EUV mask blank defects have been reduced from 10000 of size greater than 100 nm to about a few tens at size 70 nm. Unfortunately, today's state of the art defect levels are still about 10 to 100 times higher than needed. Closing this gap requires progress in the various processes associated with glass substrate creation and multilayer deposition. That process development improvement in turn relies upon the availability of metrology equipment that can resolve and chemically characterize defects as small as 30 nm. The current defect reduction efforts at SEMATECH have intensively included a focus on inspection and characterization. The facility boasts nearly 100M of metrology hardware, including an FEI Titan TEM, Lasertec M1350 and M7360 tools, an actinic inspection tool, AFM, SPM, and scanning auger capabilities. The newly established Auger tool at SEMATECH can run a standard 6-inch mask blank and is already providing important information on sub-100 nm defects on EUV

  3. Fully-Non-Contact Masking-Based Holography Inspection on Dimensionally Responsive Artwork Materials

    PubMed Central

    Tornari, Vivi; Bernikola, Eirini; Nevin, Austin; Kouloumpi, Eleni; Doulgeridis, Michalis; Fotakis, Costas

    2008-01-01

    Environmental control in galleries and museums is a necessity and is informed by the knowledge of ongoing processes of deterioration which can threaten the integrity and stability of artworks. Invisible dimensional changes in many works of art occur following environmental fluctuations as materials respond to the changes in humidity and temperature. The constant influence of dimensional changes usually remains invisible until displacement generates visible deterioration and irreversible damage. This paper exploits fully non contact coherent interferometry in a sequential masking procedure for visualising and studying surface deformation which is the direct effect of dimensional alterations induced by humidity changes. Surface deformation during dimensional displacements of constituent materials may occur on any artwork within an unstable environment. In this context, the presented research study explores the diagnostic potential of fully non contact sensors for the direct structural assessment of environmental effects as they occur in real time on works of art. The method is employed to characterise material responses, complementing and improving understanding of material behaviour in unstable environments.

  4. Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects

    SciTech Connect

    Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I.; Liang, T.

    2009-02-23

    Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.

  5. SEM-contour shape analysis based on circuit structure for advanced systematic defect inspection

    NASA Astrophysics Data System (ADS)

    Toyoda, Yasutaka; Shindo, Hiroyuki; Hojo, Yutaka; Fuchimoto, Daisuke

    2014-04-01

    We have developed a practicable measurement technique that can help to achieve reliable inspections for systematic defects in advanced semiconductor devices. Systematic defects occurring in the design and mask processes are a dominant component of integrated circuit yield loss in nano-scaled technologies. Therefore, it is essential to ensure systematic defects are detected at an early stage of wafer fabrication. In the past, printed pattern shapes have been evaluated by human eyes or by taking manual critical dimension (CD) measurements. However, these operations are sometimes unstable and inaccurate. Last year, we proposed a new technique for taking measurements by using a SEM contour [1]. This technique enables a highly precise quantification of various complex 2D shaped patterns by comparing a contour extracted from a SEM image using a CD measurement algorithm and an ideal pattern. We improved this technique to enable the carrying out of inspections suitable for every pattern structure required for minimizing the process margin. This technique quantifies a pattern shape of a target-layer pattern using information on a multi-layered circuit structure. This enabled it to confirm the existence of a critical defect in a circuit connecting upper/lower-layers. This paper describes the improved technique and the evaluation results obtained in evaluating it in detail.

  6. Advanced antireflective nanostructures etched down from nanosilver colloid-transformed island mask

    NASA Astrophysics Data System (ADS)

    Park, Seong-Je; Kim, Chul-Hyun; Lee, Ji-Hye; Jeong, Jun-Ho; Lee, Eung-Sug; Choi, Jun-Hyuk

    2012-11-01

    Advanced fabrication methods for antireflective nanostructures are presented via the formation of thermally grown nanosilver islands from continuously deposited colloidal multilayers, followed by a multi-step reactive ion etch (RIE) with optimized gas mixture rate. This process allows the formation of a random array of nanostructures of diameter 150 nm or less and height greater than 200 nm. The reflectance falls to around 0.7% in the visible region, with reasonably enhanced broadband stability and reduced incidence angle dependence. The tunability of antireflection was investigated with respect to several parameters associated with the nanosilver etch mask fabrication and RIE conditions.

  7. SEMATECH EUVL mask program status

    NASA Astrophysics Data System (ADS)

    Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

    2009-04-01

    As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been

  8. Advanced maintenance, inspection & repair technology for nuclear power plants

    SciTech Connect

    Hinton, B.M.

    1994-12-31

    Maintenance, inspection, and repair technology for nuclear power plants is outlined. The following topics are discussed: technology for reactor systems, reactor refueling bridge, fuel inspection system, fuel shuffling software, fuel reconstitution, CEA/RCCA/CRA inspection, vessel inspection capabilities, CRDM inspection and repair, reactor internals inspection and repair, stud tensioning system, stud/nut cleaning system, EDM machining technology, MI Cable systems, core exit T/C nozzle assemblies, technology for steam generators, genesis manipulator systems, ECT, UT penetrant inspections, steam generator repair and cleaning systems, technology for balance of plant, heat exchangers, piping and weld inspections, and turbogenerators.

  9. Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

    NASA Astrophysics Data System (ADS)

    Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

    2011-03-01

    Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

  10. Shuttle mask floorplanning

    NASA Astrophysics Data System (ADS)

    Xu, Gang; Tian, Ruiqi; Wong, Martin D.; Reich, Alfred J.

    2003-12-01

    A shuttle mask has different chips on the same mask. The chips are not electrically connected. Alliance and foundry customers can utilize shuttle masks to share the rising cost of mask and wafer manufacturing. This paper studies the shuttle mask floorplan problem, which is formulated as a rectangle-packing problem with constraints of final die sawing strategy and die-to-die mask inspection. For our formulation, we offer a "merging" method that reduces the problem to an unconstrained slicing floorplan problem. Excellent results are obtained from the experiment with real industry data. We also study a "general" method and discuss the reason why it does not work very well.

  11. Rapid Intelligent Inspection Process Definition for dimensional measurement in advanced manufacturing

    SciTech Connect

    Brown, C.W.

    1993-03-01

    The Rapid Intelligent Inspection Process Definition (RIIPD) project is an industry-led effort to advance computer integrated manufacturing (CIM) systems for the creation and modification of inspection process definitions. The RIIPD project will define, design, develop, and demonstrate an automated tool (i.e., software) to generate inspection process plans and coordinate measuring machine (CMM) inspection programs, as well as produce support information for the dimensional measurement of piece parts. The goal of this project is to make the inspection and part verification function, specifically CMM measurements, a more effective production support tool by reducing inspection process definition flowtime, creating consistent and standard inspections, increasing confidence of measurement results, and capturing inspection expertise. This objective is accomplished through importing STEP geometry definitions, applying solid modeling, incorporating explicit tolerance representations, establishing dimensional inspection,techniques, embedding artificial intelligence techniques, and adhering to the Dimensional Measuring Interface Standard (DMIS) national standard.

  12. EUV mask reflectivity measurements with micro-scale spatial resolution

    SciTech Connect

    Goldberg, Kenneth A.; Rekawa, Senajith B.; Kemp, Charles D.; Barty, Anton; Anderson, Erik; Kearney, Patrick; Han, Hakseung

    2008-02-01

    The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

  13. Alignment mask design and image processing for the Advanced Radiographic Capability (ARC) at the National Ignition Facility

    NASA Astrophysics Data System (ADS)

    Leach, Richard R.; Awwal, Abdul; Cohen, Simon; Lowe-Webb, Roger; Roberts, Randy; Salmon, Thad; Smauley, David; Wilhelmsen, Karl

    2015-09-01

    The Advance Radiographic Capability (ARC) at the National Ignition Facility (NIF) is a laser system that employs up to four petawatt (PW) lasers to produce a sequence of short pulses that generate X-rays which backlight high-density inertial confinement fusion (ICF) targets. ARC is designed to produce multiple, sequential X-ray images by using up to eight back lighters. The images will be used to examine the compression and ignition of a cryogenic deuterium-tritium target with tens-of-picosecond temporal resolution during the critical phases of an ICF shot. Multi-frame, hard-X-ray radiography of imploding NIF capsules is a capability which is critical to the success of NIF's missions. As in the NIF system, ARC requires an optical alignment mask that can be inserted and removed as needed for precise positioning of the beam. Due to ARC's split beam design, inserting the nominal NIF main laser alignment mask in ARC produced a partial blockage of the mask pattern. Requirements for a new mask design were needed. In this paper we describe the ARC mask requirements, the resulting mask design pattern, and the image analysis algorithms used to detect and identify the beam and reference centers required for ARC alignment.

  14. Advanced mask cleaning for 0.20-μm technology: an integrated user-supplier approach

    NASA Astrophysics Data System (ADS)

    Poschenrieder, Rudolf; Hay, Bernd; Beier, Matthias; Hourd, Andrew C.; Stuemer, Harald; Gairing, Thomas M.

    1998-12-01

    A newly developed photomask final cleaning system, STEAG HamaTech's Advanced Single Substrate Cleaner, ASC 500, was assessed and optimized at the Siemens mask shop in Munich, Germany, under production conditions within the Esprit European Semiconductor Equipment Assessment programme (SEA). The project was carried out together with the active participation of Compugraphics Intl. Ltd. (UK), DuPont Photomasks, Inc. (Germany; Photronics-MZD, Germany). The results of the assessment are presented, focusing on the cleaning performance at the 0.25 micrometer defect level on photomasks, equipment reliability and Cost of Ownership data. A reticle free of soft defects on glass and on chrome down to the 0.25 micrometer level requires an excellent cleaning process and the use of high-end inspection tools like the KLA STARlight. In order to get a full understanding of the nature of the detected features additional investigations on the blank quality have been carried out. These investigations include the questions whether a detection is a hard or a soft defect and whether small defects on chrome are able to move on the reticle surface. Final cleaning recipes have been optimized in respect to cleaning efficiency while maintaining high throughput and low Cost of Ownership. A benchmark comparison against other final cleaning tools at the partner's maskshops showed the leading data of the ASC 500. It was found that a cleaning program which includes several substrate flips and a combination of the available cleaning methods acid- dispense, water pressure jet clean, brush and megasonic clean was best suitable to achieve these goals. In particular the use of the brush unit was shown to improve the yield while not adding damage to the plate.

  15. Weijia Zhou Inspects the Advanced Astroculture plant growth unit

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Dr. Weijia Zhou, director of the Wisconsin Center for Space Automation and Robotics at the University of Wisconsin-Madison, inspects the Advanced Astroculture(tm) plant growth unit before its first flight last spring. Coating technology is used inside the miniature plant greenhouse to remove ethylene, a chemical produced by plant leaves that can cause plants to mature too quickly. This same coating technology is used in a new anthrax-killing device. The Space Station experiment is managed by the Space Product Development Program at NASA's Marshall Space Flight Center in Huntsville, Ala. DuPont is partnering with NASA and the Wisconsin Center for Space Automation and Robotics (WCSAR) at the University of Wisconsin-Madison to grow soybeans aboard the Space Station to find out if they have improved oil, protein, carbohydrates or secondary metabolites that could benefit farmers and consumers. Principal Investigators: Dr. Tom Corbin, Pioneer Hi-Bred International Inc., a Dupont Company, with headquarters in Des Moines, Iowa, and Dr. Weijia Zhou, Wisconsin Center for Space Automation and Robotics (WCSAR), University of Wisconsin-Madison.

  16. The E-beam resist test facility: performance testing and benchmarking of E-beam resists for advanced mask writers

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Jang, Il Yong; Mellish, Mac; Litt, Lloyd C.; Raghunathan, Ananthan; Hartley, John

    2012-11-01

    With each new generation of e-beam mask writers comes the ability to write leading edge photomasks with improved patterning performance and increased throughput. However, these cutting-edge e-beam tools are often used with older generation resists, preventing the end-user from taking full advantage of the tool's potential. The generation gap between tool and resist will become even more apparent with the commercialization of multi-beam mask writers, which are expected to be available for pilot line use around 2015. The mask industry needs resists capable of meeting the resolution, roughness, and sensitivity requirements of these advanced tools and applications. The E-beam Resist Test Facility (ERTF) has been established to fill the need for consortium-based testing of e-beam resists for mask writing applications on advanced mask writers out to the 11nm half-pitch node and beyond. SEMATECH and the College of Nanoscale Science and Engineering (CNSE) began establishing the ERTF in early 2012 to test e-beam resist samples from commercial suppliers and university labs against the required performance metrics for each application at the target node. Operations officially began on June 12, 2012, at which time the first e-beam resist samples were tested. The ERTF uses the process and metrology infrastructure available at CNSE, including a Vistec VB300 Vectorscan e-beam tool adjusted to operate at 50kv. Initial testing results show that multiple resists already meet, or are close to meeting, the resolution requirements for mask writing at the 11nm node, but other metrics such as line width roughness still need improvement. An overview of the ERTF and its capabilities is provided here. Tools, baseline processes, and operation strategy details are discussed, and resist testing and benchmarking results are shown. The long-term outlook for the ERTF and plans to expand capability and testing capacity, including resist testing for e-beam direct write lithography, are also

  17. Advances in the Use of Thermography to Inspect Composite Tanks for Liquid Fuel Propulsion Systems

    NASA Technical Reports Server (NTRS)

    Lansing, Matthew D.; Russell, Samuel S.; Walker, James L.; Jones, Clyde S. (Technical Monitor)

    2001-01-01

    This viewgraph presentation gives an overview of advances in the use of thermography to inspect composite tanks for liquid fuel propulsion systems. Details are given on the thermographic inspection system, thermographic analysis method (includes scan and defect map, method of inspection, and inclusions, ply wrinkle, and delamination defects), graphite composite cryogenic feedline (including method, image map, and deep/shallow inclusions and resin rich area defects), and material degradation nondestructive evaluation.

  18. A wall-crawling robot for reactor vessel inspection in advanced reactors

    SciTech Connect

    Spelt, P.F.; Crane, C.; Feng, L.; Abidi, M.; Tosunoglu, S.

    1994-06-01

    A consortium of four universities and the Center for Engineering Systems Advanced Research of the Oak Ridge National Laboratory has designed a prototype wall-crawling robot to perform weld inspection in advanced nuclear reactors. Design efforts for the reactor vessel inspection robot (RVIR) concentrated on the Advanced Liquid Metal Reactor because it presents the most demanding environment in which such a robot must operate. The RVIR consists of a chassis containing two sets of suction cups that can alternately grasp the side of the vessel being inspected, providing both locomotion and steering functions. Sensors include three CCD cameras and a weld inspection device based on new shear-wave technology. The restrictions of the inspection environment presented major challenges to the team. These challenges were met in the prototype, which has been tested in a non-radiation, room-temperature mockup of the robot work environment and shown to perform as expected.

  19. Development of spin-on-carbon hard mask for advanced node

    NASA Astrophysics Data System (ADS)

    Kudo, Takanori; Rahman, M. Dalil; McKenzie, Douglas; Anyadiegwu, Clement; Doerrenbaecher, Sandra; Zahn, Wolfgang; Padmanaban, Munirathna

    2014-03-01

    Spin-on-carbon (SOC) hard mask is useful for multilayer lithography process because of its high etch resistance, low cost of ownership, low defectivity, high alignment accuracy, good gap filling and planarization for topography. SOC is a high carbon containing polymer solution and as a coating material, the polymers need to be soluble in organic solvent and insoluble after curing for coating upper layer materials. High carbon content (>80%) of SOC is very important for good etch resistance. As the semiconductor industry is moving to 2X nm node and beyond, further improvement of SOC properties mentioned above is required to achieve higher resolution. We synthesized a series of novel monomers and high carbon polymers applicable for SOC applications of advanced nodes. The optimized SOC was a PGMEA based formulation, had high carbon content 90%, excellent filling/leveling properties, and adequate etching properties applicable to trilayer process. The SOC successfully transferred patterns from resist into substrate and the SOC patterns did not show deformation or wiggling down to CD 40nm. This paper describes some of the SOC polymer chemistry and the performance of an optimized SOC formulation.

  20. Mask degradation monitoring with aerial mask inspector

    NASA Astrophysics Data System (ADS)

    Tseng, Wen-Jui; Fu, Yung-Ying; Lu, Shih-Ping; Jiang, Ming-Sian; Lin, Jeffrey; Wu, Clare; Lifschitz, Sivan; Tam, Aviram

    2013-06-01

    As design rule continues to shrink, microlithography is becoming more challenging and the photomasks need to comply with high scanner laser energy, low CDU, and ever more aggressive RETs. This give rise to numerous challenges in the semiconductor wafer fabrication plants. Some of these challenges being contamination (mainly haze and particles), mask pattern degradation (MoSi oxidation, chrome migration, etc.) and pellicle degradation. Fabs are constantly working to establish an efficient methodology to manage these challenges mainly using mask inspection, wafer inspection, SEM review and CD SEMs. Aerial technology offers a unique opportunity to address the above mask related challenges using one tool. The Applied Materials Aera3TM system has the inherent ability to inspect for defects (haze, particles, etc.), and track mask degradation (e.g. CDU). This paper focuses on haze monitoring, which is still a significant challenge in semiconductor manufacturing, and mask degradation effects that are starting to emerge as the next challenge for high volume semiconductor manufacturers. The paper describes Aerial inspector (Aera3) early haze methodology and mask degradation tracking related to high volume manufacturing. These will be demonstrated on memory products. At the end of the paper we take a brief look on subsequent work currently conducted on the more general issue of photo mask degradation monitoring by means of an Aerial inspector.

  1. 33 CFR 401.79 - Advance notice of arrival, vessels requiring inspection.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 33 Navigation and Navigable Waters 3 2013-07-01 2013-07-01 false Advance notice of arrival, vessels requiring inspection. 401.79 Section 401.79 Navigation and Navigable Waters SAINT LAWRENCE SEAWAY DEVELOPMENT CORPORATION, DEPARTMENT OF TRANSPORTATION SEAWAY REGULATIONS AND RULES Regulations Information and Reports § 401.79 Advance notice...

  2. Advanced in In Situ Inspection of Automated Fiber Placement Systems

    NASA Technical Reports Server (NTRS)

    Juarez, Peter D.; Cramer, K. Elliott; Seebo, Jeffrey P.

    2016-01-01

    Automated Fiber Placement (AFP) systems have been developed to help take advantage of the tailorability of composite structures in aerospace applications. AFP systems allow the repeatable placement of uncured, spool fed, preimpregnated carbon fiber tape (tows) onto substrates in desired thicknesses and orientations. This automated process can incur defects, such as overlapping tow lines, which can severely undermine the structural integrity of the part. Current defect detection and abatement methods are very labor intensive, and still mostly rely on human manual inspection. Proposed is a thermographic in situ inspection technique which monitors tow placement with an on board thermal camera using the preheated substrate as a through transmission heat source. An investigation of the concept is conducted, and preliminary laboratory results are presented. Also included will be a brief overview of other emerging technologies that tackle the same issue. Keywords: Automated Fiber Placement, Manufacturing defects, Thermography

  3. Advances in in situ inspection of automated fiber placement systems

    NASA Astrophysics Data System (ADS)

    Juarez, Peter D.; Cramer, K. Elliott; Seebo, Jeffrey P.

    2016-05-01

    Automated Fiber Placement (AFP) systems have been developed to help take advantage of the tailorability of composite structures in aerospace applications. AFP systems allow the repeatable placement of uncured, spool fed, preimpregnated carbon fiber tape (tows) onto substrates in desired thicknesses and orientations. This automated process can incur defects, such as overlapping tow lines, which can severely undermine the structural integrity of the part. Current defect detection and abatement methods are very labor intensive, and still mostly rely on human manual inspection. Proposed is a thermographic in situ inspection technique which monitors tow placement with an on board thermal camera using the preheated substrate as a through transmission heat source. An investigation of the concept is conducted, and preliminary laboratory results are presented. Also included will be a brief overview of other emerging technologies that tackle the same issue.

  4. Lithographic analysis of distributed photomask defects: II. Random mask CD errors

    NASA Astrophysics Data System (ADS)

    Karklin, Linard

    2002-07-01

    With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. Mask inspection and mask defect repair are increasingly important components of advanced photo mask technology. The low cost of mask manufacturing and the necessity of delivering photo masks to production floor in the shortest possible time require new photo mask specs and acceptance criteria. It is no longer economically viable to reject a photo mask because some mask anomalies were found, or repair all the defects detected by state of the art inspection tool. One should use a smart approach to separate tolerable mask anomalies from real mask defects that might negatively affect device yield. However, this is not a trivial task. With rising mask complexity (e.g., binary masks with aggressive optical proximity correction or phase-shifting masks (PSM)-attenuated and alternating) and inspection and metrology tools running out of steam, new technologies such as the AIMSTMand Virtual Stepper® system must be used to sort nuisance mask defects from real ones. This will help to reduce the number of required defect repairs and shorten mask manufacturing cycle time. However, it is very difficult to utilize AIMS in the production environment because of its low operational speed; the Virtual Stepper software, in its turn, relies on mask data captured by inspection/metrology hardware. In the case of phase masks, such as Attenuated PSM (especially high transmission EAPSM) and Alternating PSM, inspection tools are not able to accurately retrieve optical properties of mask materials; as a result defect analysis is becoming very difficult and unreliable task. Very common types of PSM defects that occur during mask manufacturing and repair processes are the so-called distributed defects, such as gallium stains, riverbeds, pinhole clusters, and large chrome residuals (on EAPSM). It is very difficult to get accurate

  5. Design of the reactor vessel inspection robot for the advanced liquid metal reactor

    SciTech Connect

    Spelt, P.F.; Crane, C.; Feng, L.; Abidi, M.; Tosunoglu, S.

    1994-06-01

    A consortium of four universities and Oak Ridge National Laboratory designed a prototype wall-crawling robot to perform weld inspection in an advanced nuclear reactor. The restrictions of the inspection environment presented major challenges to the team. These challenges were met in the prototype, which has been tested in a mock non-hostile environment and shown to perform as expected, as detailed in this report.

  6. Optimal mask characterization by Surrogate Wafer Print (SWaP) method

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

    2008-10-01

    Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an

  7. Shearography for Non-destructive Inspection with applications to BAT Mask Tile Adhesive Bonding and Specular Surface Honeycomb Panels

    NASA Technical Reports Server (NTRS)

    Lysak, Daniel B.

    2003-01-01

    The applicability of shearography techniques for non-destructive evaluation in two unique application areas is examined. In the first application, shearography is used to evaluate the quality of adhesive bonds holding lead tiles to the B.4T gamma ray mask for the NASA Swift program. Using a vibration excitation, the more poorly bonded tiles are readily identifiable in the shearography image. A quantitative analysis is presented that compares the shearography results with a destructive pull test measuring the force at bond failure. The second application is to evaluate the bonding between the skin and core of a honeycomb structure with a specular (mirror-like) surface. In standard shearography techniques, the object under test must have a diffuse surface to generate the speckle patterns in laser light, which are then sheared. A novel configuration using the specular surface as a mirror to image speckles from a diffuser is presented, opening up the use of shearography to a new class of objects that could not have been examined with the traditional approach. This new technique readily identifies large scale bond failures in the panel, demonstrating the validity of this approach.

  8. New method of 2-dimensional metrology using mask contouring

    NASA Astrophysics Data System (ADS)

    Matsuoka, Ryoichi; Yamagata, Yoshikazu; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2008-10-01

    We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

  9. Achieving CDU requirement for 90-nm technology node and beyond with advanced mask making process technology

    NASA Astrophysics Data System (ADS)

    Tzu, San-De; Chang, Chung-Hsing; Chen, Wen-Chi; Kliem, Karl-Heinz; Hudek, Peter; Beyer, Dirk

    2005-01-01

    For 90nm node and beyond technology generations, one of the most critical challenges is how to meet the local CD uniformity (proximity) and global CD uniformity (GCDU) requirements within the exposure field. Both of them must be well controlled in the mask making process: (1) proximity effect and, (2) exposure pattern loading effect, or the so-called e-beam "fogging effect". In this paper, we report a method to improve our global CDU by means of a long range fogging compensation together with the Leica SB350 MW. This exposure tool is operated at 50keV and 1nm design grid. The proximity correction is done by the software - package "PROXECCO" from PDF Solutions. We have developed a unique correction method to reduce the fogging effect in dependency of the pattern density of the mask. This allows us to meet our customers" CDU specifications for the 90nm node and beyond.

  10. 29 CFR 1903.6 - Advance notice of inspections.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Regulations Relating to Labor (Continued) OCCUPATIONAL SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... in cases of apparent imminent danger, advance notice may be given by the Compliance Safety and Health... of the employer, the Compliance Safety and Health Officer will inform the authorized...

  11. 29 CFR 1903.6 - Advance notice of inspections.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Regulations Relating to Labor (Continued) OCCUPATIONAL SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... in cases of apparent imminent danger, advance notice may be given by the Compliance Safety and Health... of the employer, the Compliance Safety and Health Officer will inform the authorized...

  12. Anticipating and controlling mask costs within EDA physical design

    NASA Astrophysics Data System (ADS)

    Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

    2003-08-01

    For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By

  13. Recent advances in fast neutron radiography for cargo inspection

    NASA Astrophysics Data System (ADS)

    Sowerby, B. D.; Tickner, J. R.

    2007-09-01

    Fast neutron radiography techniques are attractive for screening cargo for contraband such as narcotics and explosives. Neutrons have the required penetration, they interact with matter in a manner complementary to X-rays and they can be used to determine elemental composition. Compared to neutron interrogation techniques that measure secondary radiation (neutron or gamma-rays), neutron radiography systems are much more efficient and rapid and they are much more amenable to imaging. However, for neutron techniques to be successfully applied to cargo screening, they must demonstrate significant advantages over well-established X-ray techniques. This paper reviews recent developments and applications of fast neutron radiography for cargo inspection. These developments include a fast neutron and gamma-ray radiography system that utilizes a 14 MeV neutron generator as well as fast neutron resonance radiography systems that use variable energy quasi-monoenergetic neutrons and pulsed broad energy neutron beams. These systems will be discussed and compared with particular emphasis on user requirements, sources, detector systems, imaging ability and performance.

  14. 33 CFR 401.79 - Advance notice of arrival, vessels requiring inspection.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 33 Navigation and Navigable Waters 3 2010-07-01 2010-07-01 false Advance notice of arrival, vessels requiring inspection. 401.79 Section 401.79 Navigation and Navigable Waters SAINT LAWRENCE SEAWAY DEVELOPMENT CORPORATION, DEPARTMENT OF TRANSPORTATION SEAWAY REGULATIONS AND RULES Regulations Information...

  15. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  16. Advancements of the Hybrid Method UF6 Container Inspection System

    SciTech Connect

    Mace, Emily K.; Orton, Christopher R.; Jordan, David V.; McDonald, Benjamin S.; Smith, Leon E.

    2011-07-17

    Safeguards inspectors currently visit uranium enrichment plants to verify UF6 cylinder enrichment declarations. Measurements are performed with handheld high-resolution detectors on a limited number of cylinders taken to be representative of the plant’s cylinder inventory. These enrichment assay methods interrogate only a small fraction of the total cylinder volume, and are time-consuming and expensive to execute. Pacific Northwest National Laboratory (PNNL) is developing an automated UF6 cylinder verification station concept based on the combined collection of traditional enrichment-meter data (186 keV photons from 235U) and non-traditional, neutron-induced, high-energy gamma-ray signatures (3-8 MeV) with an array of collimated, medium-resolution scintillators. Previous work at PNNL (2010) demonstrated proof-of-principle that this hybrid method yields accurate, full-volume assay of the cylinder enrichment, reduces systematic errors when compared to several other enrichment assay methods, and provides simplified instrumentation and algorithms suitable for long-term, unattended operations. This system aims to increase the number of inspected cylinders at higher accuracy and with lower cost than when compared to inspectors with hand-held instruments. Several measurement campaigns of 30B cylinder populations and a refined MCNP model will be reported. The MCNP model consists of per-gram basis vectors for the different uranium isotopes and several fill geometries, enabling fast generation of any UF6 enrichment level and multiple configurations. The refined model was used to optimize collimator design and detector configuration for the hybrid method. In addition, a new field prototype based on model results was utilized in a set of field measurements.

  17. Advanced Computed Tomography Inspection System (ACTIS): An overview of the technology and its application

    NASA Technical Reports Server (NTRS)

    Hediger, Lisa H.

    1991-01-01

    The Advanced Computed Tomography Inspection System (ACTIS) was developed by NASA Marshall to support solid propulsion test programs. ACTIS represents a significant advance in state-of-the-art inspection systems. Its flexibility and superior technical performance have made ACTIS very popular, both within and outside the aerospace community. Through technology utilization efforts, ACTIS has been applied to inspection problems in commercial aerospace, lumber, automotive, and nuclear waste disposal industries. ACTIS has been used to inspect items of historical interest. ACTIS has consistently produced valuable results, providing information which was unattainable through conventional inspection methods. Although many successes have already been shown, the full potential of ACTIS has not yet been realized. It is currently being applied in the commercial aerospace industry by Boeing. Smaller systems, based on ACTIS technology, are becoming increasingly available. This technology has much to offer the small business and industry, especially in identifying design and process problems early in the product development cycle to prevent defects. Several options are available to businesses interested in this technology.

  18. Advanced computed tomography inspection system (ACTIS): an overview of the technology and its applications

    NASA Astrophysics Data System (ADS)

    Beshears, Ronald D.; Hediger, Lisa H.

    1994-10-01

    The Advanced Computed Tomography Inspection System (ACTIS) was developed by the Marshall Space Flight Center to support in-house solid propulsion test programs. ACTIS represents a significant advance in state-of-the-art inspection systems. Its flexibility and superior technical performance have made ACTIS very popular, both within and outside the aerospace community. Through Technology Utilization efforts, ACTIS has been applied to inspection problems in commercial aerospace, lumber, automotive, and nuclear waste disposal industries. ACTIS has even been used to inspect items of historical interest. ACTIS has consistently produced valuable results, providing information which was unattainable through conventional inspection methods. Although many successes have already been demonstrated, the full potential of ACTIS has not yet been realized. It is currently being applied in the commercial aerospace industry by Boeing Aerospace Company. Smaller systems, based on ACTIS technology are becoming increasingly available. This technology has much to offer small businesses and industry, especially in identifying design and process problems early in the product development cycle to prevent defects. Several options are available to businesses interested in pursuing this technology.

  19. Advanced dimensional inspection for the reverse engineering of power plant equipment

    SciTech Connect

    Kotteakos, B.; Ball, K.A.

    1996-12-31

    Forced outages and critical path situations often leave electric utilities with very few options other than the OEM. What does the utility do when faced with the situation of long lead time or obsolete items necessary to bring units back on-line, or off load restrictions. At Southern California Edison Company (SCE), a proactive approach to the reverse engineering and inspection process was undertaken to reduce the effects of similar situations. Advances in dimensional measurement technology have afforded the authors` company a cost effective method for obtaining the necessary inspection data to remanufacture certain items. This paper identifies equipment utilized by SCE for the reverse engineering and inspection of turbine and turbine related components and their typical applications in the power generation industry.

  20. A comparison of conventional and advanced ultrasonic inspection techniques in the characterization of TMC materials

    NASA Astrophysics Data System (ADS)

    Holland, Mark R.; Handley, Scott M.; Miller, James G.; Reighard, Mark K.

    Results obtained with a conventional ultrasonic inspection technique as well as those obtained with more advanced ultrasonic NDE methods in the characterization of an 8-ply quasi-isotropic titanium matrix composite (TMC) specimen are presented. Images obtained from a conventional ultrasonic inspection of TMC material are compared with those obtained using more sophisticated ultrasonic inspection methods. It is suggested that the latter techniques are able to provide quantitative images of TMC material. They are able to reveal the same potential defect indications while simultaneously providing more quantitative information concerning the material's inherent properties. Band-limited signal loss and slope-of-attenuation images provide quantitative data on the inherent material characteristics and defects in TMC.

  1. A comparison of conventional and advanced ultrasonic inspection techniques in the characterization of TMC materials

    NASA Technical Reports Server (NTRS)

    Holland, Mark R.; Handley, Scott M.; Miller, James G.; Reighard, Mark K.

    1992-01-01

    Results obtained with a conventional ultrasonic inspection technique as well as those obtained with more advanced ultrasonic NDE methods in the characterization of an 8-ply quasi-isotropic titanium matrix composite (TMC) specimen are presented. Images obtained from a conventional ultrasonic inspection of TMC material are compared with those obtained using more sophisticated ultrasonic inspection methods. It is suggested that the latter techniques are able to provide quantitative images of TMC material. They are able to reveal the same potential defect indications while simultaneously providing more quantitative information concerning the material's inherent properties. Band-limited signal loss and slope-of-attenuation images provide quantitative data on the inherent material characteristics and defects in TMC.

  2. Wavelength dependent mask defects

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Butt, Shahid; Burnham, Jay; Faure, Tom; Hibbs, Michael; Rankin, Jed; Thibault, David; Watts, Andrew

    2005-05-01

    For years there has been a mismatch between the photomask inspection wavelength and the usage conditions. While the non-actinic inspection has been a source for concern, there has been essentially no evidence that a defect "escaped" the mask production process due to the inspection mismatch. This paper will describe the discovery of one such defect, as well as the diagnostic and inspection techniques used to identify the location, analyze the composition, and determine the source of the printed wafer defect. Conventional mask inspection techniques revealed no defects, however an actinic Aerial Image Metrology System (AIMS) revealed a 1.5 mm region on the mask with up to 59% transmission reduction at 193 nm. Further diagnostics demonstrated a strong wavelength dependence which accounted for the near invisibility of the defect at I line (365 nm) or even DUV (248 nm) wavelengths, which had 0% and 5% respective transmission reductions. Using some creative imaging techniques via AIMS tool and modeling, the defect was deduced to have a three dimensional Gaussian absorption character, with total width approximately 1.5 mm. Several non-destructive diagnostic techniques were developed to determine the composition and location of the defect within the substrate. These results will be described in addition to identifying methods for ensuring product quality in the absence of actinic inspection.

  3. EUV mask infrastructure readiness and gaps for TD and HVM

    NASA Astrophysics Data System (ADS)

    Liang, Ted; Magana, John; Chakravorty, Kishore; Panning, Eric; Zhang, Guojing

    2015-10-01

    The industry is transitioning EUV lithography from feasibility phase to technology development. EUV mask infrastructure needs to be prepared to support the technology development and ready to enable the implementation of EUV lithography for production. In this paper, we review the current status and assess the readiness of key infrastructure modules in EUV mask fabrication, inspection and control, and usage in a mask cycle: blank quality and inspection, pattern inspection, defect disposition and repair, pellicle integration, and handling of pelliclized masks.

  4. Gas centrifuge enrichment plants inspection frequency and remote monitoring issues for advanced safeguards implementation

    SciTech Connect

    Boyer, Brian David; Erpenbeck, Heather H; Miller, Karen A; Ianakiev, Kiril D; Reimold, Benjamin A; Ward, Steven L; Howell, John

    2010-09-13

    Current safeguards approaches used by the IAEA at gas centrifuge enrichment plants (GCEPs) need enhancement in order to verify declared low enriched uranium (LEU) production, detect undeclared LEU production and detect high enriched uranium (BEU) production with adequate probability using non destructive assay (NDA) techniques. At present inspectors use attended systems, systems needing the presence of an inspector for operation, during inspections to verify the mass and {sup 235}U enrichment of declared cylinders of uranium hexafluoride that are used in the process of enrichment at GCEPs. This paper contains an analysis of how possible improvements in unattended and attended NDA systems including process monitoring and possible on-site destructive analysis (DA) of samples could reduce the uncertainty of the inspector's measurements providing more effective and efficient IAEA GCEPs safeguards. We have also studied a few advanced safeguards systems that could be assembled for unattended operation and the level of performance needed from these systems to provide more effective safeguards. The analysis also considers how short notice random inspections, unannounced inspections (UIs), and the concept of information-driven inspections can affect probability of detection of the diversion of nuclear material when coupled to new GCEPs safeguards regimes augmented with unattended systems. We also explore the effects of system failures and operator tampering on meeting safeguards goals for quantity and timeliness and the measures needed to recover from such failures and anomalies.

  5. Current status of NGL masks

    NASA Astrophysics Data System (ADS)

    Walker, David M.

    2000-07-01

    The manufacture of Next Generation Lithography reticles presents many challenges. Extremely small critical dimension and image placement error budgets; novel substrates including membranes and multi-layer reflective coatings; and inspection, detection and repair of subresolution defects will force revolutionary change in the infrastructure of mask technology. This paper surveys current NGL mask designs, structures, materials and manufacturing capabilities. Results from mask fabrication, physical modeling, error budget analysis and extensive experience in building X-Ray membrane masks are presented to develop process learning plans to meet future product specifications.

  6. Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication

    NASA Astrophysics Data System (ADS)

    Akeno, Kiminobu; Ogasawara, Munehiro; Ooki, Kenji; Tojo, Toru; Hirano, Ryoichi; Yoshitake, Shusuke; Toriumi, Masaki; Sekine, Akihiko; Takigawa, Tadahiko; Shinoda, Toshiki; Noguchi, Shigeru

    2002-09-01

    An in-situ measurement system for particles in an electron beam (EB) writer is developed to improve mask yield management. The system has satisfied the required installation specifications for a mask blank inspection system for the EB writer, and the results of an experiment using the system prove that particles added from the mask handling system in our EB writer satisfy the total particle count specification (<1.25 counts/cycle for 6 inch mask). The investigation of particle increase after repeated mask movement has been carried out in each segmented mask handling route. It has been clarified that the segmentation test using this system is helpful for investigation of the origin of particle production on a mask. Effective application of information such as particle position and size obtained by this system will be very useful for improving mask yield management in the mask fabrication process in terms of pattern inspection and repair system.

  7. Mask qualification strategies in a wafer fab

    NASA Astrophysics Data System (ADS)

    Jaehnert, Carmen; Kunowski, Angela

    2007-02-01

    Having consistent high quality photo masks is one of the key factors in lithography in the wafer fab. Combined with stable exposure- and resist processes, it ensures yield increases in production and fast learning cycles for technology development and design evaluation. Preventive controlling of incoming masks and quality monitoring while using the mask in production is essential for the fab to avoid yield loss or technical problems caused by mask issues, which eventually result in delivery problems to the customer. In this paper an overview of the procedures used for mask qualification and production release, for both logic and DRAM, at Infineon Dresden is presented. Incoming qualification procedures, such as specification checks, incoming inspection, and inline litho process window evaluation, are described here. Pinching and electrical tests, including compatibility tests for mask copies for high volume products on optimized litho processes, are also explained. To avoid mask degradation over lifetime, re-inspection checks are done for re-qualification while using the mask in production. The necessity of mask incoming inspection and re-qualification, due to the repeater printing from either the processing defects of the original mask or degrading defects of being used in the fab (i.e. haze, ESD, and moving particles, etc.), is demonstrated. The need and impact of tight mask specifications, such as CD uniformity signatures and corresponding electrical results, are shown with examples of mask-wafer CD correlation.

  8. Integration of mask and silicon metrology in DFM

    NASA Astrophysics Data System (ADS)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  9. PMJ panel discussion overview on mask complexities, cost, and cycle time in 32-nm system LSI generation: conflict or concurrent?

    NASA Astrophysics Data System (ADS)

    Hosono, Kunihiro; Kato, Kokoro

    2008-10-01

    This is a report on a panel discussion organized in Photomask Japan 2008, where the challenges about "Mask Complexities, Cost, and Cycle Time in 32-nm System LSI Generation" were addressed to have a look over the possible solutions from the standpoints of chipmaker, commercial mask shop, DA tool vendor and equipments makers. The wrap-up is as follows: Mask complexities justify the mask cost, while the acceptable increase rate of 32nm-mask cost significantly differs between mask suppliers or users side. The efficiency progress by new tools or DFM has driven their cycle-time reductions. Mask complexities and cost will be crucial issues prior to cycle time, and there seems to be linear correlation between them. Controlling complexity and cycle time requires developing a mix of advanced technologies, and especially for cost reduction, shot prices in writers and processing rates in inspection tools have been improved remarkably by tool makers. In addition, activities of consortium in Japan (Mask D2I) are expected to enhance the total optimization of mask design, writing and inspection. The cycle-time reduction potentially drives the lowering of mask cost, and, on the other, the pattern complexities and tighter mask specifications get in the way to 32nm generation as well as the nano-economics and market challenges. There are still many difficult problems in mask manufacturing now, and we are sure to go ahead to overcome a 32nm hurdle with the advances of technologies and collaborations by not only technologies but also finance.

  10. Automatic classification and defect verification based on inspection technology with lithography simulation

    NASA Astrophysics Data System (ADS)

    Kato, Masaya; Inuzuka, Hideki; Kosuge, Takeshi; Yoshikawa, Shingo; Kanno, Kayoko; Imai, Hidemichi; Miyashita, Hiroyuki; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

    2015-10-01

    Even small defects on the main patterns can create killer defects on the wafer, whereas the same defect on or near the decorative patterns may be completely benign to the wafer functionality. This ambiguity often causes operators and engineers to put a mask "on hold" to be analyzed by an AIMS™ tool which slows the manufacturing time and increases mask cost. In order to streamline the process, mask shops need a reliable way to quickly identify the wafer impact of defects during mask inspection review reducing the number of defects requiring AIMS™ analysis. Source Mask Optimization (SMO) techniques are now common on sub 20nm node critical reticle patterns These techniques create complex reticle patterns which often makes it difficult for inspection tool operators to identify the desired wafer pattern from the surrounding nonprinting patterns in advanced masks such as SMO, Inverse Lithography Technology (ILT), Negative Tone Development (NTD). In this study, we have tested a system that generates aerial simulation images directly from the inspection tool images. The resulting defect dispositions from a program defect test mask along with numerous production mask defects have been compared to the dispositions attained from AIMS™ analysis. The results of our comparisons are presented, as well as the impact to mask shop productivity.

  11. Improving inspectability with KLA-Tencor TeraScan thin line de-sense

    NASA Astrophysics Data System (ADS)

    Chen, Chunlin; Kim, David; Park, Ki Hun; Kim, NamWook; Han, Sang Hoon; Park, Jin Hyung; Chung, Dong Hoon

    2007-10-01

    In the ever-changing semi-conductor industry, new innovations and technical advances constantly bring new challenges to fabs, mask-shops and vendors. One of such advances is an aggressive optical proximity correction (OPC) method, sub-resolution assist features (SRAF). On one hand, SRAFs bring a leap forward in resolution improvement during wafer printing; on the other hand they bring new challenges to many processes in mask making. KLA-Tencor Corp. working together with Samsung Electronics Co. developed an additional function to the current HiRes 1 detector to increase inspectability and usable sensitivity during the inspection step of the mask making process. SRAFs bring an unique challenge to the mask inspection process, which mask shops had not experienced before. SRAF by nature do not resolve on wafer and thus have a higher tolerance in the CD (critical dimension) uniformity, edge roughness and pattern defects. This new function, Thin-Line De-sense (TLD), increase the inspectability and usable sensitivity by generating different regions of sensitivity and thus will match the defect requirement on a particular photomask with SRAFs better. The value of TLD was proven in a production setting with more than 30 masks inspected, and resulted in higher sensitivity on main features and a sharp decrease in the amount of defects that needed to be classified.

  12. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  13. Thermo-mechanical analysis of fixed mask 1 for the Advanced Photon Source insertion device front ends

    SciTech Connect

    Nian, H.L.T.; Shu, D.; Sheng, I.C.A.; Kuzay, T.M.

    1993-10-01

    The first fixed mask (FM1) is one of the critical elements on the insertion device front ends of the beamlines at the Advanced Photon Source (APS) now under construction at Argonne National Laboratory (ANL). The heat flux from the APS undulators is enormous. For example, FM1 placed at a distance of 16 m from the Undulator A source will be subjected to 519 W/mm{sup 2} at normal incidence with a total power of 3.8 kW. Due to a high localized thermal gradient on this component, inclined geometry (1.5{degree}) is used in the design to spread the footprint of the x-ray beam. A box-cone-shape geometry was designed due to the limited space available in the front end. The box shape is a highly constrained geometry, which induces larger stress levels than would occur in a plate or a tube. In order to handle the expected higher stress and the stress concentration at the corners, a single Glidcop block (rather than copper) was used in the construction. The FM1 uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm{sup 2}{center_dot}{degree}C with single-phase water as the coolant. The authors simulated the location of the x-ray beam in several places to cover the worst possible case. The maximum temperature (about 180{degree}C) occurs when the beam hits the center of horizontal surface. The maximum effective stress (about 313 MPa) occurs when the x-ray beam hits about the corners.

  14. Mask Blank Defect Detection

    SciTech Connect

    Johnson, M A; Sommargren, G E

    2000-02-04

    Mask blanks are the substrates that hold the master patterns for integrated circuits. Integrated circuits are semiconductor devices, such as microprocessors (mPs), dynamic random access memory (DRAMs), and application specific integrated circuits (ASICs) that are central to the computer, communication, and electronics industries. These devices are fabricated using a set of master patterns that are sequentially imaged onto light-sensitive coated silicon wafers and processed to form thin layers of insulating and conductive materials on top of the wafer. These materials form electrical paths and transistors that control the flow of electricity through the device. For the past forty years the semiconductor industry has made phenomenal improvements in device functionality, compactness, speed, power, and cost. This progress is principally due to the exponential decrease in the minimum feature size of integrated circuits, which has been reduced by a factor of {radical}2 every three years. Since 1992 the Semiconductor Industry Association (SIA) has coordinated the efforts of producing a technology roadmap for semiconductors. In the latest document, ''The International Technology Roadmap for Semiconductors: 1999'', future technology nodes (minimum feature sizes) and targeted dates were specified and are summarized in Table 1. Lithography is the imaging technology for producing a de-magnified image of the mask on the wafer. A typical de-magnification factor is 4. Mask blank defects as small as one-eighth the equivalent minimum feature size are printable and may cause device failure. Defects might be the result of the surface preparation, such as polishing, or contamination due to handling or the environment. Table 2 shows the maximum tolerable defect sizes on the mask blank for each technology node. This downward trend puts a tremendous burden on mask fabrication, particularly in the area of defect detection and reduction. A new infrastructure for mask inspection will be

  15. Mask strategy at International SEMATECH

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2002-08-01

    International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

  16. Free-ranging finless porpoises acoustically inspect their frontal area in advance

    NASA Astrophysics Data System (ADS)

    Akamatsu, Tomonari; Wang, Ding; Wang, Kexiong; Naito, Yasuhiko

    2001-05-01

    Echolocation events, interpulse intervals, and swimming speeds of nine free-ranging finless porpoises in an oxbow of the Yangtze River, China were recorded by datalogger systems attached on the animals. Over 120 h of successful recording indicated that the finless porpoises acoustically inspected their frontal area in advance before swimming silently. The acoustical sensing distance estimated by the interpulse interval was significantly larger than the swimming distance without echolocation beforehand. Terminal phase which was already known in the echolocation behavior of bats could be found in free-ranging finless porpoises. The terminal phase is the decreasing interpulse intervals in an echolocation pulse train that are observed just before the prey capture. During the terminal phase of finless porpoises, linearly decreased interpulse intervals were recognized. In the mean time, the swimming distance and the change of the sensing distance were closely correlated with each other. This suggests that the finless porpoise knew precisely the distance to the approaching target in the time scale of subsecond order. Acoustical sensing effort was considered to be controlled appropriately by free-ranging finless porpoises to obtain underwater information they need. [Research supported by Promotion of Basic Research Activities for Innovative Biosciences, Bio-oriented Technology Research Advancement Institution, Japan.

  17. A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

    NASA Astrophysics Data System (ADS)

    Schiavone, Patrick; Martin, Luc; Browning, Clyde; Farys, Vincent; Sundermann, Frank; Narukawa, Shogo; Takikawa, Tadahiko; Hayashi, Naoya

    2012-06-01

    The new generations of photomasks are seen to bring more and more challenges to the mask manufacturer. Maskshops face two conflicting requirements, namely improving pattern fidelity and reducing or at least maintaining acceptable writing time. These requirements are getting more and more challenging since pattern size continuously shrinks and data volumes continuously grows. Although the classical dose modulation Proximity Effect Correction is able to provide sufficient process control to the mainstream products, an increased number of published and wafer data show that the mask process is becoming a nonnegligible contributor to the 28nm technology yield. We will show in this paper that a novel approach of mask proximity effect correction is able to meet the dual challenge of the new generation of masks. Unlike the classical approach, the technique presented in this paper is based on a concurrent optimization of the dose and geometry of the fractured shots. Adding one more parameter allows providing the best possible compromise between accuracy and writing time since energy latitude can be taken into account as well. This solution is implemented in the Inscale software package from Aselta Nanographics. We have assessed the capability of this technology on several levels of a 28nm technology. On this set, the writing time has been reduced up to 25% without sacrificing the accuracy which at the same time has been improved significantly compared to the existing process. The experiments presented in the paper confirm that a versatile proximity effect correction strategy, combining dose and geometry modulation helps the users to tradeoff between resolution/accuracy and e-beam write time.

  18. Coatings on reflective mask substrates

    DOEpatents

    Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

    2002-01-01

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  19. Fabrication and commercialization of scalpel masks

    NASA Astrophysics Data System (ADS)

    Novembre, Anthony E.; Peabody, Milton L., Jr.; Blakey, Myrtle I.; Farrow, Reginald C.; Kasica, Richard J.; Liddle, James A.; Saunders, Thomas E.; Tennant, Donald M.

    1998-09-01

    SCALPEL masks have been fabricated for use in the Proof-of- Lithography system and to demonstrate the feasibility of having them produced by a commercial blank manufacturer and optical mask shops. Masks blanks are formed from 100 mm diameter silicon wafers. A 100-150 nm thick SiNx layer is LPCVD deposited onto the wafers followed by magnetron sputter deposition of a thin Cr/W metal layer which is used as the scatterer layer for the mask>the mask is supported by an underlying network of struts which are arranged to be compatible with the step and scan writing strategy of the exposure tool and to provide robustness to the mask. Crystallographic wet etching of the silicon wafer forms membranes and struts. To date over 300 mask blanks have been formed and yield data as a function of the thickness of the silicon nitride membrane has been quantified. Recent developments in the mask blank formation process include the production of blanks by MCNC who serve as a commercial source of SCALPEL mask blanks. They have successfully delivered 36 blanks that exhibit equivalent properties to those produced at Lucent. Mask patterning has been performed at the commercial optical mask shops of PHOTRONICS and DUPONT. In this investigation a MEBES exposure system has been used to write patterns. The resist used is ZEP-520 and development and pattern transfer processes are performed in the STEAG-Hammatech spray/spin processing tool. Metrology is performed using a KMS 310 RT optical microscope. Pattern placement accuracy is measured on the LMS 2020 system without modification. The masks are inspected for defects using the optical based KLA 300 series inspection system in a die to die mode and in transmission. Results to date suggest feasibility of producing SCALPEL masks by a commercial blank supplier and by merchant optical mask shops.

  20. Advanced laser shearography inspection of turbo-fan engine composite fan cases

    NASA Astrophysics Data System (ADS)

    Lape, Dale; Newman, John W.; Craig, David

    1995-07-01

    Shearography inspection techniques have been developed and implemented for the inspection of aluminum honeycomb turbofan aircraft engine fan cases for the JT15D-5D. Shearography has yielded improved sensitivity to unbonds and throughput over ultrasonic techniques formerly used in the production inspection. This paper discusses vacuum stress shearography, test method verification on the JT15D-5D fan case and shearography data correlation with destructive evaluation of test parts.

  1. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  2. Advanced In-Service Inspection Approaches Applied to the Phenix Fast Breeder Reactor

    SciTech Connect

    Guidez, J.; Martin, L.; Dupraz, R.

    2006-07-01

    The safety upgrading of the Phenix plant undertaken between 1994 and 1997 involved a vast inspection programme of the reactor, the external storage drum and the secondary sodium circuits in order to meet the requirements of the defence-in-depth safety approach. The three lines of defence were analysed for every safety related component: demonstration of the quality of design and construction, appropriate in-service inspection and controlling the consequences of an accident. The in-service reactor block inspection programme consisted in controlling the core support structures and the high-temperature elements. Despite the fact that limited consideration had been given to inspection constraints during the design stage of the reactor in the 1960's, as compared to more recent reactor projects such as the European Fast Reactor (EFR), all the core support line elements were able to be inspected. The three following main operations are described: Ultrasonic inspection of the upper hangers of the main vessel, using small transducers able to withstand temperatures of 130 deg. C, Inspection of the conical shell supporting the core dia-grid. A specific ultrasonic method and a special implementation technique were used to control the under sodium structure welds, located up to several meters away from the scan surface. Remote inspection of the hot pool structures, particularly the core cover plug after partial sodium drainage of the reactor vessel. Other inspections are also summarized: control of secondary sodium circuit piping, intermediate heat exchangers, primary sodium pumps, steam generator units and external storage drum. The pool type reactor concept, developed in France since the 1960's, presents several favourable safety and operational features. The feedback from the Phenix plant also shows real potential for in-service inspection. The design of future generation IV sodium fast reactors will benefit from the experience acquired from the Phenix plant. (authors)

  3. Mask pattern generator employing EPL technology

    NASA Astrophysics Data System (ADS)

    Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

    2003-08-01

    Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

  4. Process capability of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  5. Clay Mask Workshop

    ERIC Educational Resources Information Center

    Gamble, David L.

    2012-01-01

    Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

  6. Actinic review of EUV masks

    NASA Astrophysics Data System (ADS)

    Feldmann, Heiko; Ruoff, Johannes; Harnisch, Wolfgang; Kaiser, Winfried

    2010-04-01

    Management of mask defects is a major challenge for the introduction of EUV for HVM production. Once a defect has been detected, its printing impact needs to be predicted. Potentially the defect requires some repair, the success of which needs to be proven. This defect review has to be done with an actinic inspection system that matches the imaging conditions of an EUV scanner. During recent years, several concepts for such an aerial image metrology system (AIMS™) have been proposed. However, until now no commercial solution exists for EUV. Today, advances in EUV optics technology allow envisioning a solution that has been discarded before as unrealistic. We present this concept and its technical cornerstones.While the power requirement for the EUV source is less demanding than for HVM lithography tools, radiance, floor space, and stability are the main criteria for source selection. The requirement to emulate several generations of EUV scanners demands a large flexibility for the ilumination and imaging systems. New critical specifications to the EUV mirrors in the projection microscope can be satisfied using our expertise from lithographic mirrors. In summary, an EUV AIMS™ meeting production requirements seems to be feasible.

  7. Inspection, maintenance, and repair of large pumps and piping systems using advanced robotic tools

    SciTech Connect

    Lewis, R.K.; Radigan, T.M.

    1998-07-01

    Operating and maintaining large pumps and piping systems can be an expensive proposition. Proper inspections and monitoring can reduce costs. This was difficult in the past, since detailed pump inspections could only be performed by disassembly and many portions of piping systems are buried or covered with insulation. Once these components were disassembled, a majority of the cost was already incurred. At that point, expensive part replacement usually took place whether it was needed or not. With the completion of the Pipe Walker{trademark}/LIP System and the planned development of the Submersible Walker{trademark}, this situation is due to change. The specifications for these inspection and maintenance robots will ensure that. Their ability to traverse both horizontal and vertical, forward and backward, make them unique tools. They will open the door for some innovative approaches to inspection and maintenance of large pumps and piping systems.

  8. Final inspection of photomask blanks

    NASA Astrophysics Data System (ADS)

    Schubert, Fredi; Sauerbrei, Hartmut; Aschke, Lutz; Knapp, Konrad

    2001-04-01

    In order to increase the quality in manufacturing of future photon mask generations Schott Lithotec is brought in a brand new, much increased automatic laser inspection system into a new manufacturing line of photo mask blanks. It is in a position to detect additionally to the standard defect types further defect types like dim- and bright-chrome defects. The resolution of the system is less than 100 nm. With a quickly inspecting time per blank of less than three minutes and for the first time in the world used automatic SMIF-pod-handling this is a tool for the 100 percent final inspection in the manufacturing of photo mask blanks.

  9. Advanced Ultrasonic Inspection Techniques for General Purpose Heat Source Fueled Clad Closure Welds

    SciTech Connect

    Moyer, M.W.

    2001-01-11

    A radioisotope thermoelectric generator is used to provide a power source for long-term deep space missions. This General Purpose Heat Source (GPHS) is fabricated using iridium clad vent sets to contain the plutonium oxide fuel pellets. Integrity of the closure weld is essential to ensure containment of the plutonium. The Oak Ridge Y-12 Plant took the lead role in developing the ultrasonic inspection for the closure weld and transferring the inspection to Los Alamos National Laboratory for use in fueled clad inspection for the Cassini mission. Initially only amplitude and time-of-flight data were recorded. However, a number of benign geometric conditions produced signals that were larger than the acceptance threshold. To identify these conditions, a B-scan inspection was developed that acquired full ultrasonic waveforms. Using a test protocol the B-scan inspection was able to identify benign conditions such as weld shield fusion and internal mismatch. Tangential radiography was used to confirm the ultrasonic results. All but two of 29 fueled clads for which ultrasonic B-scan data was evaluated appeared to have signals that could be attributed to benign geometric conditions. This report describes the ultrasonic inspection developed at Y-12 for the Cassini mission.

  10. Smoke Mask

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Smoke inhalation injury from the noxious products of fire combustion accounts for as much as 80 percent of fire-related deaths in the United States. Many of these deaths are preventable. Smoke Mask, Inc. (SMI), of Myrtle Beach, South Carolina, is working to decrease these casualties with its line of life safety devices. The SMI personal escape hood and the Guardian Filtration System provide respiratory protection that enables people to escape from hazardous and unsafe conditions. The breathing filter technology utilized in the products is specifically designed to supply breathable air for 20 minutes. In emergencies, 20 minutes can mean the difference between life and death.

  11. EUVL mask repair: expanding options with nanomachining

    NASA Astrophysics Data System (ADS)

    Gallagher, Emily; McIntyre, Gregory; Lawliss, Mark; Robinson, Tod; Bozak, Ronald; White, Roy; LeClaire, Jeff

    2012-11-01

    Mask defectivity is often cited as a barrier to EUVL manufacturing, falling just behind low source power. Mask defectivity is a combination of intrinsic blank defects, defects introduced during the mask fabrication and defects introduced during the use of the mask in the EUV exposure tool. This paper works towards minimizing the printing impact of blank defects so that the final EUVL mask can achieve a lower defectivity. Multilayer defects can be created by a step or scratch as shallow as 1nm in the substrate. These small defects create coherent disruptions in the multilayer that can generate significant variations in mask reflectivity and induce clearly-defined, printable defects. If the optical properties of the defect can be well understood, nanomachining repair processes can be deployed to fix these defects. The purpose of this work is to develop new nanomachining repair processes and approaches that can repair complex EUVL mask defects by targeted removal of the EUVL mask materials. The first phase of this work uses nanomachining to create artificial phase defects of different types and sizes for both printability evaluation and benchmarking with simulation. Experimental results validate the concept, showing a reasonable match between imaging with the LBNL Actinic Inspection Tool (AIT) and simulation of the mask topography measured by AFM. Once the printability of various nanomachined structures is understood, the second phase of the work aims to optimize the process to repair real EUVL mask defects with surrounding absorber patterns.

  12. Automatic classification and accurate size measurement of blank mask defects

    NASA Astrophysics Data System (ADS)

    Bhamidipati, Samir; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

    2015-07-01

    A blank mask and its preparation stages, such as cleaning or resist coating, play an important role in the eventual yield obtained by using it. Blank mask defects' impact analysis directly depends on the amount of available information such as the number of defects observed, their accurate locations and sizes. Mask usability qualification at the start of the preparation process, is crudely based on number of defects. Similarly, defect information such as size is sought to estimate eventual defect printability on the wafer. Tracking of defect characteristics, specifically size and shape, across multiple stages, can further be indicative of process related information such as cleaning or coating process efficiencies. At the first level, inspection machines address the requirement of defect characterization by detecting and reporting relevant defect information. The analysis of this information though is still largely a manual process. With advancing technology nodes and reducing half-pitch sizes, a large number of defects are observed; and the detailed knowledge associated, make manual defect review process an arduous task, in addition to adding sensitivity to human errors. Cases where defect information reported by inspection machine is not sufficient, mask shops rely on other tools. Use of CDSEM tools is one such option. However, these additional steps translate into increased costs. Calibre NxDAT based MDPAutoClassify tool provides an automated software alternative to the manual defect review process. Working on defect images generated by inspection machines, the tool extracts and reports additional information such as defect location, useful for defect avoidance[4][5]; defect size, useful in estimating defect printability; and, defect nature e.g. particle, scratch, resist void, etc., useful for process monitoring. The tool makes use of smart and elaborate post-processing algorithms to achieve this. Their elaborateness is a consequence of the variety and

  13. Development and field validation of advanced array probes for steam generator inspection

    SciTech Connect

    Dodd, C.V.; Pate, J.R.

    1995-04-01

    The aging of the steam generators at the nation`s nuclear power plants has led to the appearance of new forms of degradation in steam generator tubes and an increase in the frequency of forced outages due to major tube leak events. The eddy-current techniques currently being used for the inspection of steam generator tubing are no longer adequate to ensure that flaws will be detected before they lead to a shutdown of the plant. To meet the need for a fast and reliable method of inspection, ORNL has designed a 16-coil eddy-current array probe which combines an inspection speed similar to that of the bobbin coil with a sensitivity to cracks of any orientation similar to the rotating pancake coil. In addition, neural network and least square methods have been developed for the automatic analysis of the data acquired with the new probes. The probes and analysis software have been tested at two working steam generators where we have found an increase in the signal-to-noise ratio of a factor of five an increase in the inspection speed of a factor of 75 over the rotating pancake coil which maintaining similar detection and characterization capabilities.

  14. Mask process simulation for mask quality improvement

    NASA Astrophysics Data System (ADS)

    Takahashi, Nobuyasu; Goto, So; Tsunoda, Dai; Shin, So-Eun; Lee, Sukho; Shon, Jungwook; Park, Jisoong

    2015-10-01

    Demand for mask process correction (MPC) is growing facing the 14nm era. We have developed model based MPC and can generate mask contours by using this mask process model. This mask process model consists of EB (development) and etch, which employs a threshold (level set) model and a variable bias model respectively. The model calibration tool accepts both CD measurement results and SEM images. The simulation can generate mask image (contour), runs with distributed computing resources, and has scalable performance. The contour simulation shows the accuracy of the MPC correction visually and provides comprehensive information about hot spots in mask fabrication. Additionally, it is possible to improve lithography simulation quality by providing a simulated mask contour. In this paper, accuracy and computational performance of mask process simulation are shown. The focus is on the difference between the calibration methods using CDs or images.

  15. Wafer plane inspection evaluated for photomask production

    NASA Astrophysics Data System (ADS)

    Gallagher, Emily; Badger, Karen; Lawliss, Mark; Kodera, Yutaka; Azpiroz, Jaione Tirapu; Pang, Song; Zhang, Hongqin; Eugenieva, Eugenia; Clifford, Chris; Goonesekera, Arosha; Tian, Yibin

    2008-10-01

    Wafer Plane Inspection (WPI) is a novel approach to inspection, developed to enable high inspectability on fragmented mask features at the optimal defect sensitivity. It builds on well-established high resolution inspection capabilities to complement existing manufacturing methods. The production of defect-free photomasks is practical today only because of informed decisions on the impact of defects identified. The defect size, location and its measured printing impact can dictate that a mask is perfectly good for lithographic purposes. This inspection - verification - repair loop is timeconsuming and is predicated on the fact that detectable photomask defects do not always resolve or matter on wafer. This paper will introduce and evaluate an alternative approach that moves the mask inspection to the wafer plane. WPI uses a high NA inspection of the mask to construct a physical mask model. This mask model is used to create the mask image in the wafer plane. Finally, a threshold model is applied to enhance sensitivity to printing defects. WPI essentially eliminates the non-printing inspection stops and relaxes some of the pattern restrictions currently placed on incoming photomask designs. This paper outlines the WPI technology and explores its application to patterns and substrates representative of 32nm designs. The implications of deploying Wafer Plane Inspection will be discussed.

  16. Wafer plane inspection with soft resist thresholding

    NASA Astrophysics Data System (ADS)

    Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

    2008-10-01

    Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just

  17. Advanced radiation techniques for inspection of diesel engine combustion chamber materials components. Final report

    SciTech Connect

    1995-10-09

    Heavy duty truck engines must meet stringent life cycle cost and regulatory requirements. Meeting these requirements has resulted in convergence on 4-stroke 6-in-line, turbocharged, and after-cooled engines with direct-injection combustion systems. These engines provide much higher efficiencies (42%, fuel consumption 200 g/kW-hr) than automotive engines (31%, fuel consumption 270 g/kW-hr), but at higher initial cost. Significant near-term diesel engine improvements are necessary and are spurred by continuing competitive, Middle - East oil problems and Congressional legislation. As a result of these trends and pressures, Caterpillar has been actively pursuing a low-fuel consumption engine research program with emphasis on product quality through process control and product inspection. The goal of this project is to combine the nondestructive evaluation and computational resources and expertise available at LLNL with the diesel engine and manufacturing expertise of the Caterpillar Corporation to develop in-process monitoring and inspection techniques for diesel engine combustion chamber components and materials. Early development of these techniques will assure the optimization of the manufacturing process by design/inspection interface. The transition from the development stage to the manufacturing stage requires a both a thorough understanding of the processes and a way of verifying conformance to process standards. NDE is one of the essential tools in accomplishing both elements and in this project will be integrated with Caterpillar`s technological and manufacturing expertise to accomplish the project goals.

  18. Advanced Signal Processing Techniques Applied to Terahertz Inspections on Aerospace Foams

    NASA Technical Reports Server (NTRS)

    Trinh, Long Buu

    2009-01-01

    The space shuttle's external fuel tank is thermally insulated by the closed cell foams. However, natural voids composed of air and trapped gas are found as by-products when the foams are cured. Detection of foam voids and foam de-bonding is a formidable task owing to the small index of refraction contrast between foam and air (1.04:1). In the presence of a denser binding matrix agent that bonds two different foam materials, time-differentiation of filtered terahertz signals can be employed to magnify information prior to the main substrate reflections. In the absence of a matrix binder, de-convolution of the filtered time differential terahertz signals is performed to reduce the masking effects of antenna ringing. The goal is simply to increase probability of void detection through image enhancement and to determine the depth of the void.

  19. Masks and Other Disguises.

    ERIC Educational Resources Information Center

    Ploghoft, Debra

    Instructions for making simple masks are provided in this guide for teachers of elementary children. Directions with illustrations are given for constructing masks from paper plates, construction paper, plastic milk jugs, and papier-mache. Ideas include a clown mask, a flower mask, a top hat, a paper crown, and "Groucho" glasses. Types of masks…

  20. Electrostatic chucking and EUVL mask flatness analysis

    NASA Astrophysics Data System (ADS)

    Nataraju, M.; Mikkelson, A.; Sohn, J.; Engelstad, R. L.; Lovell, E. G.

    2005-11-01

    Successful implementation of Extreme Ultraviolet Lithography (EUVL) depends on advancements in many areas, including the quality of the mask and chuck system to control image placement (IP) errors. One source of IP error is the height variations of the patterned mask surface (i.e., its nonflatness). The SEMI EUVL mask and chucking standards (SEMI P37 and SEMI P40) describe stringent requirements for the nonflatness of the mask frontside and backside, and the chucking surfaces. Understanding and characterizing the clamping ability of the electrostatic chuck and the effect on the mask flatness is therefore critical in order to meet these requirements. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients (obtained from measured mask and chuck data) as input data to define the surfaces of the mask and the chuck. The FE models are then used to determine the clamping response of the mask and the resulting flatness of the pattern surface. The sum of the mask thickness nonuniformity and the chuck surface shape has a dominant effect on the flatness of the patterned surface after chucking. The focus of the present research is a comprehensive analysis of the flatness and interaction between the nonflat chuck and the mask. Experiments will be conducted using several sample masks chucked by a slab type electrostatic chuck. Results from the study will support and facilitate the timely development of EUVL mask/chuck systems which meet required specifications.

  1. Best-practice evaluation-methods for wafer-fab photomask-requalification inspection tools

    NASA Astrophysics Data System (ADS)

    Cho, Chan Seob; Mungmode, Ashish; Taylor, Ron; Cho, David; Koh, Hui Peng

    2014-10-01

    Requalifying semiconductor photomasks remains critically important and is increasingly challenging for 20nm and 14nm node logic reticles. Patterns are becoming more complex on the photomask, and defect sensitivity requirements are more stringent than ever before. Reticle inspection tools are equally important for effective process development and the successful ramp and sustained yield for high volume manufacturing. The inspection stages considered were: incoming inspection to match with Mask Shop Outgoing result and to detect defects generated during transport; requalification by routine cycle inspection to detect Haze and any other defects; and inspection by in-house or Mask shop at the post cleaning. There are many critical capability and capacity factors for the decision for best inspection tool and strategy for high volume manufacturing, especially objective Lens NA, wavelength, power, pixel size, throughput, full-automation inspection linked with Overhead Transport, algorithm application, engineering application function, and inspection of PSM and OMOG . These tools are expensive but deliver differentiated value in terms of performance and throughput as well as extendibility. Performing a thorough evaluation and making a technically sound choice which explores these many factors is critical for success of a fab. This paper examines the methodology for evaluating two different photomask inspection tools. The focus is on ensuring production worthiness on real and advanced product photomasks requiring accurate evaluation of sensitivity, throughput, data analysis function and engineering work function on those product photomasks. Photomasks used for data collection are production reticles, PDM(Program defect Mask), SiN spray defect Reticle which is described that evaluates how the tools would perform on a contaminated plate.

  2. Studies of a suitable mask error enhancement factor for 2D patterns

    NASA Astrophysics Data System (ADS)

    Wei, Chih I.; Cheng, Yung Feng; Chen, Ming Jui

    2013-04-01

    In advanced 20nm and below technology nodes, the mask enhanced error factor (MEEF) plays an important rule due to the request of stable process control and quality of mask manufacture. It provides us an effective parameter to analyze the process window for lithography. In advanced nodes, MEEF criterion becomes more important than previous nodes because very tight process tolerance is requested, especially in OPC and mask capability control. Therefore, we have to do further studies on this topic. In the simple line/trench design layers (for example: Active and poly), the MEEF is easy to be defined because mask bias is isotropic. However, in the complicated two-dimensional (2D) design layers (for example: Contact and Mvia), they are hard to be defined a suitable definition of MEEF. In the first part, we used the global bias to calculate the MEEF on all patterns. It makes calculation easier to compare with other patterns which are different shapes. However, when we inspected the 2D line-end patterns on the wafer, we found the significant differences between the MEEF of wafer data and aerial simulation. In order to clarify this issue, we perform series simulation studies of the line-end MEEF. Then we knew that it came from the different bias strategies. Furthermore, the simulation studies show that the line-end MEEF of non-preferable orientation is very sensitive to mask X/Y ratio bias due to strong OAI optical behavior by the SMO source. As a result, a new point of view of 2D MEEF is suggested according to physical mask CD error measurement data. In this study, we would find a better description of the MEEF than traditional one for lithographic process development on 2D region.

  3. Focused ion beams for x-ray mask repair

    NASA Astrophysics Data System (ADS)

    Stewart, Diane K.; Olson, Thomas K.; Doyle, Andrew F.

    1994-11-01

    To ensure production of functional devices based on X-ray lithography, the masks must be defect free. We have developed a repair process integrated with a focused ion beam (FIB) system such that proximity print X-ray masks with features as small as 0.25 micrometers can be repaired to industry specifications. Inspection data is transferred to the tool, and defects on masks are repaired using this data. We will review the primary technical concerns associated with repair of X-ray masks, and we will discuss design elements of the FIB system which are vital to machine performance. Examples of the inspection-repair cycle will be shown. Finally, we address the ability of the tool to place repairs accurately and reproducibly so that manufacturing specifications can be achieved on proximity print X-ray masks.

  4. A novel approach: high resolution inspection with wafer plane defect detection

    NASA Astrophysics Data System (ADS)

    Hess, Carl; Wihl, Mark; Shi, Rui-fang; Xiong, Yalin; Pang, Song

    2008-05-01

    High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yield-limiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newly-developed Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. WPI is a new inspection mode that has been developed by KLA-Tencor and is currently under test with multiple customers. It employs the same transmitted and reflected-light high-resolution images as the industry-standard high-resolution inspections, but with much more sophisticated processing involved. A rigorous mask pattern recovery algorithm is used to convert the transmitted and reflected light images into a modeled representation of the reticle. Lithographic modeling of the scanner is then used to generate an aerial image of the mask. This is followed by resist modeling to determine the exposure of the photoresist. The defect detectors are then applied on this photoresist plane so that only printing defects are detected. Note that no hardware modifications to the inspection system are required to enable this detector. The same tool will be able to perform both our standard High Resolution inspections and the Wafer Plane Inspection detector. This approach has several important features. The ability to ignore non

  5. Keeping African Masks Real

    ERIC Educational Resources Information Center

    Waddington, Susan

    2012-01-01

    Art is a good place to learn about our multicultural planet, and African masks are prized throughout the world as powerfully expressive artistic images. Unfortunately, multicultural education, especially for young children, can perpetuate stereotypes. Masks taken out of context lose their meaning and the term "African masks" suggests that there is…

  6. Characterizing contamination inspection capabilities using programmed defect test reticles

    NASA Astrophysics Data System (ADS)

    Nhiev, Anthony; Riddick, John; Straub, Joseph; Hutchinson, Trent; Reese, Bryan; Dayal, Aditya

    2007-10-01

    The ORION TM series of test reticles have been used for many years as the photomask industry standard for evaluating contamination inspection algorithms. The deposition of Polystyrene Latex (PSL) spheres on various reticle pattern designs allow STARlight TM tool owners to measure the relative contamination inspection performance in a consistent and quantifiable manner. However, with recent inspection technology advances such as shorter laser (light source) wavelengths and smaller inspection pixels, PSL spheres were observed to physically degrade over relatively short time periods: especially for the smallest sized spheres used to characterize contamination inspection performance at the most advanced technology nodes. Investigations into using alternative materials or methods that address the issue of PSL shrinkage have not yet proven completely successful. Problems such as failure to properly adhere to reticle surfaces or identification of materials that can produce consistent and predictable sphere sizes for the reliable manufacture of these critical test masks are only some of the challenges that must be solved. Even if these and other criteria are met, the final substance must appear to inspection optics as pseudo soft defects which resemble actual contamination that inevitably appears on production reticle surfaces. In the interim, programmed pindot defects present in the quartz region of the SPICA TM test reticle are being used to characterize contamination performance while a suitable long-term solution to address the issue of shrinking PSL spheres on ORION masks can be found. This paper examines the results of a programmed pindot test reticle specifically designed to evaluate contamination algorithms without the deposition of PSL spheres or similar structures. This alternative programmed pindot test reticle uses various background patterns similar to the ORION, however, it also includes multiple defects sizes and locations making it more desirable than the

  7. 2013 mask industry survey

    NASA Astrophysics Data System (ADS)

    Malloy, Matt

    2013-09-01

    A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

  8. Mask industry assessment: 2004

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert V.; Hector, Scott D.

    2004-12-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of equipment for mask fabrication. This year's assessment is the third in the current series of annual reports and is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. This report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results may be used to guide future investments on critical path issues. This year's survey builds upon the 2003 survey to provide an ongoing database using the same questions as a baseline with only a few minor changes or additions. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services. Within each category are a many questions that create a detailed profile of both the business and technical status of the mask industry. This assessment includes inputs from ten major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market.

  9. Lithographic plane review (LPR) for sub-32nm mask defect disposition

    NASA Astrophysics Data System (ADS)

    Tolani, Vikram; Peng, Danping; He, Lin; Hwa, George; Chang, Hsien-Min; Dai, Grace; Corcoran, Noel; Dam, Thuc; Pang, Linyong; Tuo, Laurent C.; Chen, C. J.; Lai, Rick

    2010-09-01

    As optical lithography continues to extend into low-k1 regime, resolution of mask patterns under mask inspection optical conditions continues to diminish. Furthermore, as mask complexity and MEEF has also increased, it requires detecting even smaller defects in the already narrower pitch mask patterns. This leaves the mask inspection engineer with the option to either purchase a higher resolution mask inspection tool or increase the detector sensitivity on the existing inspection system or maybe even both. In order to meet defect sensitivity requirements in critical features of sub-32nm node designs, increasing sensitivity typically results in increased nuisance (i.e., small sub-specification) defect detection by 5-20X defects making post-inspection defect review non-manufacturable. As a solution for automatically dispositioning the increased number of nuisance and real defects detected at higher inspection sensitivity, Luminescent has successfully extended Inverse Lithography Technology (ILT) and its patented level-set methods to reconstruct the defective mask from its inspection image, and then perform simulated AIMS dispositioning on the reconstructed mask. In this technique, named Lithographic Plane Review (LPR), inspection transmitted and reflected light images of the test (i.e. defect) and reference (i.e., corresponding defect-free) regions are provided to the "inversion" engine which then computes the corresponding test and reference mask patterns. An essential input to this engine is a well calibrated model incorporating inspection tool optics, mask processing and 3D effects, and also the subsequent AIMS tool optics to be able to then simulate the aerial image impact of the defects. This flow is equivalent to doing an actual AIMS tool measurement of every defect detected during mask inspection, while at the same time maintaining inspection at high enough resolution. What makes this product usable in mask volume production is the high degree of accuracy of

  10. High resolution inspection with wafer plane die: database defect detection

    NASA Astrophysics Data System (ADS)

    Hess, Carl; Wihl, Mark; Shi, Rui-fang; Xiong, Yalin; Pang, Song

    2008-10-01

    High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property. A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in Die:Database mode.

  11. Development of a design intent extraction flow for mask manufacturing

    NASA Astrophysics Data System (ADS)

    Kato, Kokoro; Endo, Masakazu; Inoue, Tadao; Yamabe, Masaki

    2010-03-01

    The cost of photomasks has been rising year by year as the process node gets finer and the mask cost is becoming one of the headaches in the semiconductor industry. For the purpose of the mask cost reduction, ASET started Mask D2I (Mask Design, Drawing and Inspection Technology) project in 2006. In earlier papers[1-4], we introduced the idea of photomask data prioritization method which is referred to as Mask Data Rank (MDR). We have built our software system to convert Design Intent (DI) to MDR with cooperation of STARC. Then we showed the results of preliminary experiments with mask data provided by STARC. In this paper we explain the software mechanism of design intent extraction flow. Then we show the experimental results with actual chip data in three semiconductor companies and address the related issues. Finally we introduce a new idea to extract design intent from analog circuits.

  12. Thorough characterization of a EUV mask

    SciTech Connect

    Mizuno, H.; McIntyre, G.; Koay, C.-W.; Burkhardt, M.; He, L.; Hartley, J.; Johnson, C.; Raghunathan, S.; Goldberg, K.; Mochi, I.; La Fontaine, B.; Wood, O.

    2009-06-25

    We reported that we were successful in our 45nm technology node device demonstration in February 2008 and 22nm node technology node device patterning in February 2009 using ASML's Alpha Demo Tool (ADT). In order to insert extreme ultraviolet (EUV) lithography at the 15nm technology node and beyond, we have thoroughly characterized one EUV mask, a so-called NOVACD mask. In this paper, we report on three topics, The first topic is an analysis of line edge roughness (LER) using a mask Scanning Electron Microscope (SEM), an Atomic Force Microscope (AFM) and the Actinic Inspection Tool (AIT) to compare resist images printed with the ASML ADT. The results of the analysis show a good correlation between the mask AFM and the mask SEM measurements, However, the resist printing results for the isolated space patterns are slightly different. The cause ofthis discrepancy may be resist blur, image log slope and SEM image quality and so on. The second topic is an analysis of mask topography using an AFM and relative reflectivity of mirror and absorber surface using the AIT, The AFM data show 6 and 7 angstrom rms roughness for mirror and absorber, respectively. The reflectivity measurements show that the mirror reflects EUV light about 20 times higher than absorber. The last topic is an analysis of a 32nm technology node SRAM cell which includes a comparison of mask SEM image, AIT image, resist image and simulation results. The ADT images of the SRAM pattern were of high quality even though the mask patters were not corrected for OPC or any EUV-specific effects. Image simulation results were in good agreement with the printing results.

  13. Increasing inspection equipment productivity by utilizing factory automation SW on TeraScan 5XX systems

    NASA Astrophysics Data System (ADS)

    Jakubski, Thomas; Piechoncinski, Michal; Moses, Raphael; Bugata, Bharathi; Schmalfuss, Heiko; Köhler, Ines; Lisowski, Jan; Klobes, Jens; Fenske, Robert

    2009-01-01

    Especially for advanced masks the reticle inspection operation is a very significant cost factor, since it is a time consuming process and inspection tools are becoming disproportionately expensive. Analyzing and categorizing historical equipment utilization times of the reticle inspection tools however showed a significant amount of time which can be classified as non productive. In order to reduce the inspection costs the equipment utilization needed to be improved. The main contributors to non productive time were analyzed and several use cases identified, where automation utilizing a SECS1 equipment interface was expected to help to reduce these non productive times. The paper demonstrates how real time access to equipment utilization data can be applied to better control manufacturing resources. Scenarios are presented where remote monitoring and control of the inspection equipment can be used to avoid setup errors or save inspection time by faster response to problem situations. Additionally a solution to the second important need, the maximization of tool utilization in cases where not all of the intended functions are available, is explained. Both the models and the software implementation are briefly explained. For automation of the so called inspection strategy a new approach which allows separation of the business rules from the automation infrastructure was chosen. Initial results of inspection equipment performance data tracked through the SECS interface are shown. Furthermore a system integration overview is presented and examples of how the inspection strategy rules are implemented and managed are given.

  14. Removable pellicle for lithographic mask protection and handling

    DOEpatents

    Klebanoff, Leonard E.; Rader, Daniel J.; Hector, Scott D.; Nguyen, Khanh B.; Stulen, Richard H.

    2002-01-01

    A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.

  15. Strategy optimization for mask rule check in wafer fab

    NASA Astrophysics Data System (ADS)

    Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

    2015-07-01

    Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

  16. Mask industry assessment: 2003

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2003-12-01

    Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was initiated in 2002 with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition.1 This paper presents the results of the second annual survey which is an enhanced version of the inaugural survey building upon its strengths and improving the weak points. The original survey was designed with the input of member company mask technologists, merchant mask suppliers, and industry equipment makers. The assessment is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the critical mask industry. An objective is to create a valuable reference to identify strengths and opportunities and to guide investments on critical-path issues. As subsequent years are added, historical profiles can also be created. This assessment includes inputs from ten major global merchant and captive mask manufacturers representing approximately 80% of the global mask market (using revenue as the measure) and making this the most comprehensive mask industry survey ever. The participating companies are: Compugraphics, Dai Nippon Printing, Dupont Photomask, Hoya, IBM, Infineon, Intel, Taiwan Mask Company, Toppan, and TSMC. Questions are grouped into five categories: General Business Profile Information; Data Processing; Yields and Yield loss Mechanisms; Delivery Time; and Returns and Services. Within each category are a multitude of questions that create a detailed profile of both the business and technical status of the mask industry.

  17. Object Substitution Masking: When Does Mask Preview Work?

    ERIC Educational Resources Information Center

    Lim, Stephen Wee Hun; Chua, Fook K.

    2008-01-01

    When a target is enclosed by a 4-dot mask that persists after the target disappears, target identification is worse than it is when the mask terminates with the target. This masking effect is attributed to object substitution masking (OSM). Previewing the mask, however, attenuates OSM. This study investigated specific conditions under which mask…

  18. Macroscopic exploration and visual quality inspection of thin film deposit

    NASA Astrophysics Data System (ADS)

    Désage, Simon-Frédéric; Pitard, Gilles; Favrelière, Hugues; Pillet, Maurice; Dellea, Olivier; Fugier, Pascal; Coronel, Philippe; Ollier, Emmanuel

    2014-04-01

    Micro/nanotechnologies evolve causing an evolution of surface characterization systems of thin films. Today, these systems are not adapted to the future needs (or current) to characterize and qualify a large effective area within industrial production. This concerns the thin film active layers or simple mask for structuring the surface. This paper proposes a quality control method for thin films of self-assembled particles and high quality. This method is founded on the intersection of several skills available in our laboratories: Industrial process of visual inspection, optical methods for quality control (large area relative to the state of the art) and advances in micro/nanotechnology (CEA/Liten).

  19. Mask industry assessment: 2005

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Hector, Scott

    2005-11-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of equipment for mask fabrication. This year's assessment is the fourth in the current series of annual reports and is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. This report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results may be used to guide future investments on critical path issues. This year's survey contains all of the 2004 survey questions to provide an ongoing database. Additional questions were added to the survey covering operating cost factors and equipment utilization. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services, operating cost factors and equipment utilization. Within each category are a many questions that create a detailed profile of both the business and technical status of the mask industry. This assessment includes inputs from eight major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market. This participation rate is reduced by one captive from 2004. Note: Toppan, DuPont Photomasks Inc and AMTC (new) were consolidated into one input therefore the 2004 and 2005 surveys are basically equivalent.

  20. Defects caused by blank masks and repair solution with nanomachining for 20nm node

    NASA Astrophysics Data System (ADS)

    Lee, HyeMi; Kim, ByungJu; Kim, MunSik; Jung, HoYong; Kim, Sang Pyo; Yim, DongGyu

    2014-09-01

    As the number of masks per wafer product set is increasing and low k1 lithography requires tight mask specifications, the patterning process below sub 20nm tech. node for critical layers will be much more expensive compared with previous tech. generations. Besides, the improved resolution and the zero defect level are necessary to meet tighter specifications on a mask and these resulted in the increased the blank mask price as well as the mask fabrication cost. Unfortunately, in spite of expensive price of blank masks, the certain number of defects on the blank mask is transformed into the mask defects and its ratio is increased. But using high quality blank mask is not a good idea to avoid defects on the blank mask because the price of a blank mask is proportional to specifications related to defect level. Furthermore, particular defects generated from the specific process during manufacturing a blank mask are detected as a smaller defect than real size by blank inspection tools because of its physical properties. As a result, it is almost impossible to prevent defects caused by blank masks during the mask manufacturing. In this paper, blank defect types which is evolved into mask defects and its unique characteristics are observed. Also, the repair issues are reviewed such as the pattern damage according to the defect types and the repair solution is suggested to satisfy the AIMS (Arial Image Measurement System) specification using a nanomachining tool.

  1. Mask and pattern characteristics

    NASA Technical Reports Server (NTRS)

    Routh, D. E.

    1972-01-01

    The use of the mask and pattern facility to include information on equipment accuracy, limitations, and pattern making capabilities is discussed. An insight is provided into potential areas of pattern applications, the sequence of mask making, as well as possible inputs and outputs available to the user.

  2. Mini Metal Masks.

    ERIC Educational Resources Information Center

    Henn, Cynthia

    2003-01-01

    Describes an art project used with kindergarten and first-grade students that focused on traditional African masks as part of a unit on the culture of West Africa. Discusses how the students created their clay masks. Includes lists of learning objectives and art materials. (CMK)

  3. Lightweight Face Mask

    NASA Technical Reports Server (NTRS)

    Cason, W. E. I.; Baucom, R. M.; Evans, R. C.

    1982-01-01

    Lightweight face mask originally developed to protect epileptic patients during seizures could have many other medical and nonmedical applications such as muscular distrophy patients, football linesmen and riot-control police. Masks are extremely lightweight, the lightest of the configurations weighing only 136 grams.

  4. Enhancement in Informational Masking

    ERIC Educational Resources Information Center

    Cao, Xiang; Richards, Virginia M.

    2012-01-01

    Purpose: The ability to detect a tone added to a random masker improves when a preview of the masker is provided. In 2 experiments, the authors explored the role that perceptual organization plays in this release from masking. Method: Detection thresholds were measured in informational masking studies. The maskers were drawn at random prior to…

  5. Mask industry assessment: 2006

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia

    2006-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the fifth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 survey. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  6. Mask industry assessment: 2009

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2009-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

  7. Mask industry assessment: 2008

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2008-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  8. Mask Industry Assessment: 2007

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

    2007-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  9. Mask industry assessment: 2002

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2002-12-01

    Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of member company mask technologists, merchant mask suppliers, and industry equipment makers. This assessment can be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of our critical mask industry. It should serve as a valuable reference to identify strengths and opportunities and to guide investments on critical-path issues. Questions are grouped into five categories: General Business Profile Information; Data Processing; Yields and Yield loss Mechanisms; Delivery Time; and Returns and Services. Within each category are a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  10. Exploring EUV mask backside defectivity and control methods

    NASA Astrophysics Data System (ADS)

    Turley, Christina; Rankin, Jed; Kindt, Louis; Lawliss, Mark; Bolton, Luke; Collins, Kevin; Cheong, Lin; Bonam, Ravi; Poro, Richard; Isogawa, Takeshi; Narita, Eisuke; Kagawa, Masayuki

    2015-07-01

    The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imaging. Since EUV masks are reflective, and the column is held in a vacuum, scanners have been designed to utilize electrostatic chucking. With the chucking system for EUV, the requirements for the backside of the mask must be redefined to integrate concerns in substrate design, mask manufacturing, and usage. The two key concerns with respect to an electrostatic chuck are defects and durability. Backside defects can affect imaging, while potentially damaging or contaminating the tool, the mask, or even subsequently used masks. Compromised durability, from either usage or cleaning, can affect the ability of the chuck to hold the mask in place. In this study, these concerns are evaluated in three stages: minimizing defects created during mask fabrication, actions taken upon discovery of defects, and durability of the backside film with continued cleans and chucking. Data incorporated in this study includes: sheet resistance, film thickness, and optical inspection images. Incorporating the data from the three stages of fabrication, disposition, and lifetime will help us define how to structure backside EUV mask handling during mask manufacture and indicate what further solutions are needed as EUV technology transitions into manufacturing.

  11. Mask manufacturing rules checking (MRC) as a DFM strategy

    NASA Astrophysics Data System (ADS)

    Buck, Peter; Gladhill, Richard; Straub, Joseph

    2007-03-01

    Mask Manufacturing Rules Checking (MRC) has been established as an automated process to detect mask pattern data that will cause mask inspection problems. This methodology is unique from the Design Rule Checking (DRC) or Design for Manufacturing (DFM) checks typically performed before sending pattern data to the mask manufacturer in that it examines the entire mask layout and the spatial relationship between multiple patterns in their final orientation, scale, and tone. In contrast, DRC and DFM checks are usually performed on individual pattern files. Also, DRC and DFM checks are not always performed after all pattern transformations are complete, and errors can be introduced that are not caught until the mask is eventually printed on wafers. Therefore, MRC can often be the only comprehensive geometric integrity test performed before the mask is manufactured and the last opportunity to catch critical errors that might have disastrous consequences to yield and consequently to product schedules. In this paper we review the concepts and implementation of MRC in a merchant mask manufacturing enterprise and introduce methods to empower DFM decisions by mask customers based on MRC results.

  12. Key issues in automatic classification of defects in post-inspection review process of photomasks

    NASA Astrophysics Data System (ADS)

    Pereira, Mark; Maji, Manabendra; Pai, Ravi R.; B. V. R., Samir; Seshadri, R.; Patil, Pradeepkumar

    2012-11-01

    The mask inspection and defect classification is a crucial part of mask preparation technology and consumes a significant amount of mask preparation time. As the patterns on a mask become smaller and more complex, the need for a highly precise mask inspection system with high detection sensitivity becomes greater. However, due to the high sensitivity, in addition to the detection of smaller defects on finer geometries, the inspection machine could report large number of false defects. The total number of defects becomes significantly high and the manual classification of these defects, where the operator should review each of the defects and classify them, may take huge amount of time. Apart from false defects, many of the very small real defects may not print on the wafer and user needs to spend time on classifying them as well. Also, sometimes, manual classification done by different operators may not be consistent. So, need for an automatic, consistent and fast classification tool becomes more acute in more advanced nodes. Automatic Defect Classification tool (NxADC) which is in advanced stage of development as part of NxDAT1, can automatically classify defects accurately and consistently in very less amount of time, compared to a human operator. Amongst the prospective defects as detected by the Mask Inspection System, NxADC identifies several types of false defects such as false defects due to registration error, false defects due to problems with CCD, noise, etc. It is also able to automatically classify real defects such as, pin-dot, pin-hole, clear extension, multiple-edges opaque, missing chrome, chrome-over-MoSi, etc. We faced a large set of algorithmic challenges during the course of the development of our NxADC tool. These include selecting the appropriate image alignment algorithm to detect registration errors (especially when there are sub-pixel registration errors or misalignment in repetitive patterns such as line space), differentiating noise from

  13. Extreme ultraviolet mask substrate surface roughness effects on lithography patterning

    SciTech Connect

    George, Simi; Naulleau, Patrick; Salmassi, Farhad; Mochi, Iacopo; Gullikson, Eric; Goldberg, Kenneth; Anderson, Erik

    2010-06-21

    In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

  14. Optical testing and metrology III: Recent advances in industrial optical inspection; Proceedings of the Meeting, San Diego, CA, July 8-13, 1990

    SciTech Connect

    Grover, C.P.

    1990-01-01

    Various papers on recent advances in industrial optical inspection are presented. Individual topics addressed include: high-precision interferometric testing of spherical mirrors with long radius of curvature, aspheric surface testing techniques, apsheric testing using null mirrors, TV holography and image processing in practical use, holographic instrumentation for monitoring crystal growth in space, holography with a single picosecond pulse, phase-conjugate interferometry using dye-doped polymer films, phase-conjugate Twyman-Green interferometer for testing conicoidal surfaces. Also discussed are: new stereo laser triangulation device for specular surface inspection, fiber optical smart structures, near real-time operation of a centimeter-scale distributed fiber sensing sytem, interferometric fiber optic sensors for use with composite materials, fiber optic damage detection for an aircraft leading edge, low-cost fiber optic sensing systems using spatial division multiplexing, laser ultrasonics generation and detection considerations for improved SNR.

  15. Fine pattern fabrication property of binary mask and attenuated phase shift mask

    NASA Astrophysics Data System (ADS)

    Yamazaki, Taichi; Kojima, Yosuke; Yamana, Mitsuharu; Haraguchi, Takashi; Tanaka, Tsuyoshi

    2009-04-01

    For 45nm and 32nm node technology, the challenges for resolution and CD control of mask patterns become the steeper mountain path. Especially, Sub Resolution Assist Feature (SRAF) is the smallest pattern on mask and amplifies the difficulty of mask fabrication. In order to improve the resolution of fine patterns, the influence of wet processing cannot be neglected, because it causes the pattern collapsing. Wet processing of mask-making can be divided into resist development and cleaning. In this study, the root causes of pattern collapsing are investigated at each wet processing. It is confirmed that thin resist can enhance the resolution limit of resist pattern and hard-mask blank, such as OMOG: Opaque MoSi On Glass, is suitable for thinner resist under 1500A. The pattern collapsing of OMOG is compared with that of Att.PSM at the cleaning before and after Cr stripping. Mask inspection finds that pattern collapsing can be suppressed by OMOG at both cleanings. It is because OMOG has lower cleaning stress than Att.PSM due to lower aspect-ratio. This benefit is demonstrated by cleaning stress simulation. Additionally, it is found that the SRAF size of OMOG can be wider than Att.PSM by optical simulation. From these results, OMOG has much advantage of fine pattern fabrication and is the optimal blank for 32nm node and beyond.

  16. 2012 Mask Industry Survey

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Litt, Lloyd C.

    2012-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

  17. Optical characterization of CMOS compatible micro optics fabricated by mask-based and mask-less hybrid lithography

    NASA Astrophysics Data System (ADS)

    Wang, Sunglin; Summitt, Chris; Johnson, Lee; Zaverton, Melissa; Milster, Tom; Takashima, Yuzuru

    2014-09-01

    We report a CMOS compatible fabrication and optical characterization of the micrometer scale optical coupler, a 45° mirror-based optical coupler for inter-layer optical coupling. A newly proposed mask-based and mask-less hybrid lithography process enables accurate surface profile of the micrometer sized 45° mirror by using a CMOS compatible buffer coat material. Surface profile inspected by an optical interferometry agrees well with SEM based inspection results. Experimental and theoretical results for routing and coupling of laser beam in 90° will be discussed.

  18. Results from prototype die-to-database reticle inspection system

    NASA Astrophysics Data System (ADS)

    Mu, Bo; Dayal, Aditya; Broadbent, Bill; Lim, Phillip; Goonesekera, Arosha; Chen, Chunlin; Yeung, Kevin; Pinto, Becky

    2009-03-01

    A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used. Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone, complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration inspection systems show measurable sensitivity improvement and a reduction in false detections.

  19. Masked Photocathode for Photoinjector

    SciTech Connect

    Qiang, Ji

    2010-01-21

    In this research note, we propose a scheme to insert a photocathode inside a photoinjector for generating high brightness electron beam. Instead of mounting the photocathode onto the electrode, a masked electrode with small hole is used to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material very simple by rotating the photocathode behind the mask into the hole. This will significantly increase the usage lifetime of a photocathode. Furthermore, this also helps reduce the dark current or secondary electron emission from the photocathode. The hole on the mask also provides a transverse cut-off to the Gaussian laser profile which can be beneficial from the beam dynamics point of view.

  20. Protective Face Mask

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Mask to protect the physically impaired from injuries to the face and head has been developed by Langley Research Center. It is made of composite materials, usually graphite or boron fibers woven into a matrix. Weighs less than three ounces.

  1. EUVL Mask Blank Repair

    SciTech Connect

    Barty, A; Mirkarimi, P; Stearns, D G; Sweeney, D; Chapman, H N; Clift, M; Hector, S; Yi, M

    2002-05-22

    EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect they present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variations in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper they present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.

  2. Partial airway obstruction following manufacturing defect in laryngeal mask airway (Laryngeal Mask Silken™).

    PubMed

    Jangra, Kiran; Malhotra, Surender Kumar; Saini, Vikas

    2014-10-01

    Laryngeal mask (LM) airway is commonly used for securing airway in day-care surgeries. Various problems have been described while using LM airway. Out of those, mechanical obstruction causing airway compromise is most common. Here, we describe a case report of 4-year-old child who had partial upper airway obstruction due to LM manufacturer's defect. There was a silicon band in upper one-third of shaft of LM airway. This band was made up of the same material as that of LM airway so it was not identifiable on external inspection of transparent shaft. We suggest that such as non-transparent laryngeal mask, a transparent LM airway should also be inspected looking inside the lumen with naked eyes or by using a probe to rule out any manufacturing defect before its insertion. PMID:25422617

  3. New mask technology challenges

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2001-09-01

    Mask technology development has accelerated dramatically in recent years from the glacial pace of the last three decades to the rapid and sometimes simultaneous introductions of new wavelengths and mask-based resolution enhancement techniques. The nature of the semiconductor business has also become one driven by time-to-market as an overwhelming factor in capturing market share and profit. These are among the factors that have created enormous stress on the mask industry to produce masks with enhanced capabilities, such as phase-shifting attenuators, sub-resolution assist bars, and optical proximity correction (OPC) features, while maintaining or reducing cost and cycle time. The mask can no longer be considered a commodity item that is purchased form the lowest-cost supplier. Instead, it must now be promoted as an integral part of the technical and business case for a total lithographic solution. Improving partnership between designer, mask-maker, and wafer lithographer will be the harbinger of success in finding a profitable balance of capability, cost, and cycle time. Likewise for equipment infrastructure development, stronger partnership on the international level is necessary to control development cost and mitigate schedule and technical risks.

  4. Mask Industry Assessment: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Chan, David Y.

    2010-09-01

    A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  5. Mask Industry Assessment: 2011

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2011-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the tenth in the current series of annual reports. With ongoing industry support, the report has been used as one of the baselines to gain perspective on the technical and business status of the mask and microelectronics industries. It continues to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was essentially the same as the 2005 through 2010 surveys. Questions are grouped into following categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  6. Masks: The Artist in Me

    ERIC Educational Resources Information Center

    Skophammer, Karen

    2009-01-01

    Whether masks are made from cardboard, papier-mache, metal, wood, leather, fabric, clay or any combination of these materials, they bring out the artist in people. Young children like to wear masks when they play to pretend they were another person or animal. Masks let them fantasize and be creative. The author's students made masks representing…

  7. Mask defect printing mechanisms for future lithography generations

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Graf, Thomas; Bubke, Karsten; Höllein, Ingo; Teuber, Silvio

    2006-03-01

    Mask defects are of increasing concern for future lithography generations. The improved resolution capabilities of immersion and EUV systems increase also the sensitivity of these systems with respect to small imperfections of the mask. Advanced mask technologies such as alternating phase shift masks (AltPSM), chromeless phase shift lithography (CPL), or "thick" absorbers on EUV masks introduce new defect types. The paper presents an application of rigorous electromagnetic field modeling for the study of typical defect printing mechanisms in ArF immersion lithography and in EUV lithography. For standard imaging and mask technologies, such as binary masks or attenuated phase shift masks, small defects usually print as linewidth or critical dimension (CD) errors with the largest effect at best focus. For AltPSM, CPL masks, and EUV masks this is not always the case. Several unusual printing scenarios were observed: placement errors due to defects can become more critical than CD-errors, defects may print more critical at defocus positions different from the center of the process window, the defect printing may become asymmetric through focus, and the risk of defect printing depends on the polarization of the used light source. Several simulation examples will demonstrate these effects. Rigorous EMF simulations in combination with vector imaging simulations are very useful to understand the origins of the observed defect printing mechanisms.

  8. Advanced X-Ray Inspection of Reinforced Carbon Composite Materials on the Orbiter Leading Edge Structural Subsystem (LESS)

    NASA Technical Reports Server (NTRS)

    Hernandez, Jose M.; Berry, Robert F.; Osborn, Robin; Bueno, Clifford; Osterlitz, Mark; Mills, Richard; Morris, Philip; Phalen, Robert; McNab, Jim; Thibodeaux, Tahanie; Thompson, Kyle

    2004-01-01

    The post return-to-flight (RTF) inspection methodology for the Orbiter Leading Edge Structural Subsystem (LESS) is currently being defined. Numerous NDT modalities and techniques are being explored to perform the flight-to-flight inspections of the reinforced carbon/carbon (RCC) composite material for impact damage, general loss of mass in the bulk layers, or other anomalous conditions that would pose risk to safe return upon re-entry. It is possible to have an impact upon ascent that is not visually observable on the surface, yet causes internal damage. Radiographic testing may be a useful NDT technique for such occurrences. The authors have performed radiographic tests on full-sized mock samples of LESS hardware with embedded image quality phantoms. Digitized radiographic film, computed radiography and flat panel digital real-time radiography was acquired using a GE Eresco 200 x-ray tube, and Se-75 and Yb-169 radioisotopes.

  9. Effect of electrostatic chucking on EUVL mask flatness

    NASA Astrophysics Data System (ADS)

    Mikkelson, Andrew R.; Engelstad, Roxann L.; Lovell, Edward G.; Aschke, Lutz; Rueggeberg, Frauke; Sobel, Frank

    2004-06-01

    The International Technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. The SEMI EUVL Mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. The FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). The flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. The results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

  10. Defectivity and particle reduction for mask life extension, and imprint mask replication for high-volume semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Emoto, Keiji; Sakai, Fumio; Sato, Chiaki; Takabayashi, Yukio; Nakano, Hitoshi; Takabayashi, Tsuneo; Yamamoto, Kiyohito; Hattori, Tadashi; Hiura, Mitsuru; Ando, Toshiaki; Kawanobe, Yoshio; Azuma, Hisanobu; Iwanaga, Takehiko; Choi, Jin; Aghili, Ali; Jones, Chris; Irving, J. W.; Fletcher, Brian; Ye, Zhengmao

    2016-03-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made in the reduction of particle adders in an imprint tool and introduce the new mask replication tool that will enable the fabrication of replica masks with added residual image placement errors suitable for memory devices with half pitches smaller than 15nm. Hard particles on a wafer or mask create the possibility of creating a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, test stand results demonstrate the potential for extending mask life to better than 1000 wafers. Additionally, a new replication tool, the FPA-1100 NR2 is introduced. Mask chuck flatness simulation results were also performed and demonstrate that residual image placement errors can be reduced to as little as 1nm.

  11. The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

    NASA Astrophysics Data System (ADS)

    Hector, Scott

    2005-11-01

    The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper

  12. EUV actinic brightfield mask microscopy for predicting printed defect images

    NASA Astrophysics Data System (ADS)

    Goldberg, Kenneth; Benk, Markus P.; Wojdyla, Antoine; Verduijn, Erik; Wood, Obert R.; Mangat, Pawitter

    2015-10-01

    Improving our collective understanding of extreme ultraviolet (EUV) photomask defects and the imaging properties of available defect imaging tools is essential for improving EUV mask defectivity, defect repair and mitigation, and for high-level strategic decision-making. In this work, we perform a qualitative comparison of twenty-five defects imaged with mask scanning electron microscopy (SEM), EUV actinic mask imaging, and wafer SEM imaging. All but two of the defect locations were first identified by non-actinic mask blank inspection, prior to patterning. The others were identified as repeating defects on the wafer. We find that actinic defect imaging is predictive of the wafer prints, with small-scale features clearly replicated. While some mask defect SEM images match the wafer prints, others print with a larger outline indicating the presence of sub-surface disruptions hidden from the SEM's view. Fourteen other defects were subjected to an aerial image phase measurement method called Fourier Ptychography (FP). Although phase shifts were observed in the larger defects, the smaller defects in the dataset showed no significant phase shifting. We attribute this discrepancy to non-actinic mask blank inspection's limited ability to detect small phase defects under normal operating conditions.

  13. Orion Emergency Mask Approach

    NASA Technical Reports Server (NTRS)

    Tuan, George C.; Graf, John C.

    2008-01-01

    Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction temperature and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

  14. Orion Emergency Mask Approach

    NASA Technical Reports Server (NTRS)

    Tuan, George C.; Graf, John C.

    2009-01-01

    Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction time, breakthroughs, and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

  15. Actinic defect counting statistics over 1 cm2 area of EUVL mask blank

    SciTech Connect

    Jeong, Seongtae; Lai, Chih-Wei; Rekawa, Seno; Walton, Chris W.; Bokor, Jeffrey

    2000-02-18

    As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm{sup 2} of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.

  16. AIMS mask qualification for 32nm node

    NASA Astrophysics Data System (ADS)

    Richter, Rigo; Thaler, Thomas; Seitz, Holger; Stroessner, Ulrich; Scheruebl, Thomas

    2009-10-01

    Moving forward to 32nm node and below optical lithography using 193nm is faced with complex requirements to be solved. Mask makers are forced to address both Double Patterning Techniques and Computational Lithography approaches such as Source Mask Optimizations and Inverse Lithography. Additionally, lithography at low k1 values increases the challenges for mask repair as well as for repair verification and review by AIMSTM. Higher CD repeatability, more flexibility in the illumination settings as well as significantly improved image performance must be added when developing the next generation mask qualification equipment. This paper reports latest measurement results verifying the appropriateness of the latest member of AIMSTM measurement tools - the AIMSTM 32-193i. We analyze CD repeatability measurements on lines and spaces pattern. The influence of the improved optical performance and newly introduced interferometer stage will be verified. This paper highlights both the new Double Patterning functionality emulating double patterning processes and the influence of its critical parameters such as overlay errors and resist impact. Beneficial advanced illumination schemes emulating scanner illumination document the AIMSTM 32-193i to meet mask maker community's requirements for the 32nm node.

  17. Overlay improvement by exposure map based mask registration optimization

    NASA Astrophysics Data System (ADS)

    Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

    2015-03-01

    Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density

  18. FIB mask repair technology for electron projection lithography

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yoh; Hasuda, Masakatsu; Suzuki, Hiroyuki; Sato, Makoto; Takaoka, Osamu; Matsumura, Hiroshi; Matsumoto, Noboru; Iwasaki, Kouji; Hagiwara, Ryoji; Suzuki, Katsumi; Ikku, Yutaka; Aita, Kazuo; Kaito, Takashi; Adachi, Tatsuya; Yasaka, Anto; Yamamoto, Jiro; Iwasaki, Teruo; Yamabe, Masaki

    2004-08-01

    We have studied stencil mask repair technology with focused ion beam and developed an advanced mask repair tool for electron projection lithography. There were some challenges in the stencil mask repair, which were mainly due to its 3-dimensional structure with aspect ratio more than 10. In order to solve them, we developed some key technologies with focused ion beam (FIB). The transmitted FIB detection technique is a reliable imaging method for a 3-dimensional stencil mask. This technique makes it easy to observe deep patterns of the stencil mask and to detect the process endpoint. High-aspect processing can be achieved using gas-assisted etching (GAE) for a stencil mask. GAE enables us to repair mask patterns with aspect ratio more than 50 and very steep sidewall angle within 90+/-1°precisely. Edge placement accuracy of the developed tool is about 14nm by manual operation. This tool is capable to achieve less than 10nm by advanced software. It was found that FIB technology had capability to satisfy required specifications for EPL mask repair.

  19. Masked mycotoxins: A review

    PubMed Central

    Berthiller, Franz; Crews, Colin; Dall'Asta, Chiara; Saeger, Sarah De; Haesaert, Geert; Karlovsky, Petr; Oswald, Isabelle P; Seefelder, Walburga; Speijers, Gerrit; Stroka, Joerg

    2013-01-01

    The aim of this review is to give a comprehensive overview of the current knowledge on plant metabolites of mycotoxins, also called masked mycotoxins. Mycotoxins are secondary fungal metabolites, toxic to human and animals. Toxigenic fungi often grow on edible plants, thus contaminating food and feed. Plants, as living organisms, can alter the chemical structure of mycotoxins as part of their defence against xenobiotics. The extractable conjugated or non-extractable bound mycotoxins formed remain present in the plant tissue but are currently neither routinely screened for in food nor regulated by legislation, thus they may be considered masked. Fusarium mycotoxins (deoxynivalenol, zearalenone, fumonisins, nivalenol, fusarenon-X, T-2 toxin, HT-2 toxin, fusaric acid) are prone to metabolisation or binding by plants, but transformation of other mycotoxins by plants (ochratoxin A, patulin, destruxins) has also been described. Toxicological data are scarce, but several studies highlight the potential threat to consumer safety from these substances. In particular, the possible hydrolysis of masked mycotoxins back to their toxic parents during mammalian digestion raises concerns. Dedicated chapters of this article address plant metabolism as well as the occurrence of masked mycotoxins in food, analytical aspects for their determination, toxicology and their impact on stakeholders. PMID:23047235

  20. Apodized Phase Mask Coronagraphs

    NASA Astrophysics Data System (ADS)

    Carlotti, Alexis

    2013-01-01

    Among the optical instruments proposed to detect and characterize exoplanets, phase masks coronagraphs offer very small inner working angles. Designed for off-axis telescopes, their performance is greatly reduced when used with centrally obstructed apertures such as those of the Palomar telescope, the very large telescope, or the James Webb space telescope. However, a clear circular aperture is not the only pupil shape for which a phase mask coronagraph can work properly. In fact, for a given centrally obstructed aperture, we show that it is possible to compute optimal apodizers that help achieve stellar extinction levels similar to those obtained in the ideal case of an off-axis telescope. Trade-offs exist between these levels, the transmission of the apodizer, and the area covered by the Lyot stop. We detail the Fourier optics formalism that makes these optimizations possible, as well as a few examples of shaped pupils. Some are designed for a four-quadrants phase mask, and some others for a vortex phase mask. We also offer a comparison with a coronagraph solely composed of a shaped pupil.

  1. Competing for Consciousness: Prolonged Mask Exposure Reduces Object Substitution Masking

    ERIC Educational Resources Information Center

    Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

    2011-01-01

    In object substitution masking (OSM) a sparse, temporally trailing 4-dot mask impairs target identification, even though it has different contours from, and does not spatially overlap with the target. Here, we demonstrate a previously unknown characteristic of OSM: Observers show reduced masking at prolonged (e.g., 640 ms) relative to intermediate…

  2. Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

    NASA Astrophysics Data System (ADS)

    Chandramouli, Mahesh; Olshausen, Bob; Korobko, Yulia; Henrichs, Sven; Qu, Ping; Ma, Jian; Auches, Bruce; Cole, Damon; Ostrom, Thomas; Beyerl, Angela; Eklund, Robert; Zerne, Raoul; Goransson, Peter; Persson, Magnus; Newman, Tom

    2005-06-01

    Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

  3. Field results from a new die-to-database reticle inspection platform

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Yokoyama, Ichiro; Yu, Paul; Seki, Kazunori; Nomura, Ryohei; Schmalfuss, Heiko; Heumann, Jan; Sier, Jean-Paul

    2007-05-01

    A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm, and 130nm nodes.

  4. Development of Inspection Robots for Bridge Cables

    PubMed Central

    Kim, Se-Hoon; Lee, Jong-Jae

    2013-01-01

    This paper presents the bridge cable inspection robot developed in Korea. Two types of the cable inspection robots were developed for cable-suspension bridges and cable-stayed bridge. The design of the robot system and performance of the NDT techniques associated with the cable inspection robot are discussed. A review on recent advances in emerging robot-based inspection technologies for bridge cables and current bridge cable inspection methods is also presented. PMID:24459453

  5. [Intubating laryngeal mask].

    PubMed

    Langenstein, H; Möller, F

    1998-01-01

    To improve the success of blind intubation through a laryngeal mask, Dr. A.I.J. Brain constructed the intubating laryngeal mask airway (ILMA), marketed under the name Fastrach. The new construction allows blind intubation with highly flexible endotracheal tubes up to 8 mm ID with cuff (straight Woodbridge type), securing the airway around the intubation process and maintaining most of the characteristics of a standard laryngeal mask airway (SLMA), including contraindications. An additional contraindication is the existence of a Zenker diverticle. Up to now, eight working groups reported a success rate of blind intubation through the ILMA of more than 90% in about 1,200 patients, with a success rate of blind intubation of more than 50% for the first intubation attempt. Ten percent of the patients were difficult to intubate with the same success rate for blind intubation as in normal patients. Reduced mouth opening does not seem to hinder the use of the ILMA in spite of its increased outer diameter of 2 cm, as long as it is possible to enlarge the mouth opening to > 2 cm during anaesthesia. The new ILMA more than doubles the success of blind intubation compared to an SLMA, irrespective of a large variety of intubation difficulties. Correct judgement of endotracheal tube position is mandatory. The ILMA has the potential to be used in patients who are difficult to intubate and to substitute the SLMA in "cannot ventilate--cannot intubate" situations. The future will show if the ILMA also will improve emergency airway management by inexperienced personnel, including intubation, as has been shown for the standard laryngeal mask airway in cardiopulmonary resuscitation for ventilation only. PMID:9611362

  6. Masked multichannel analyzer

    DOEpatents

    Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

    1984-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  7. Masked multichannel analyzer

    DOEpatents

    Winiecki, Alan L.; Kroop, David C.; McGee, Marilyn K.; Lenkszus, Frank R.

    1986-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  8. Advances in transient (pulsed) eddy current for inspection of multi-layer aluminum structures in the presence of ferrous fasteners

    NASA Astrophysics Data System (ADS)

    Desjardins, D. R.; Vallières, G.; Whalen, P. P.; Krause, T. W.

    2012-05-01

    An experimental investigation of the electromagnetic processes underlying transient (pulsed) eddy current inspection of aircraft wing structures in the vicinity of ferrous fasteners is performed. The separate effects of transient excitation of ferrous fastener and eddy currents induced in the surrounding aluminum structure are explored using a transmit-receive configuration with transient excitation of a steel rod, an aluminum plate with a bore hole and a steel rod through the bore hole. Observations are used to interpret results from a coupled driving and differential coil sensing unit applied to detect fatigue cracks emanating from bolt holes in aluminum structures with ferrous fasteners present. In particular, it is noted that abrupt magnetization of the fastener, by the probe's central driving unit, can transfer flux and consequently, induce strong eddy current responses deep within the aluminum structure in the vicinity of the bore hole. Rotation of the probe, centered over the fastener, permits detection of subsurface discontinuities, such as cracks, by the pair of differentially connected pickup coils.

  9. Near Real-Time Nondestructive Active Inspection Technologies Utilizing Delayed γ-Rays and Neutrons for Advanced Safeguards

    SciTech Connect

    Hunt, Alan; Reedy, E. T.E.; Mozin, V.; Tobin, S. J.

    2015-02-12

    In this two year project, the research team investigated how delayed γ-rays from short-lived fission fragments detected in the short interval between irradiating pulses can be exploited for advanced safeguards technologies. This program contained experimental and modeling efforts. The experimental effort measured the emitted spectra, time histories and correlations of the delayed γ-rays from aqueous solutions and solid targets containing fissionable isotopes. The modeling effort first developed and benchmarked a hybrid Monte Carlo simulation technique based on these experiments. The benchmarked simulations were then extended to other safeguards scenarios, allowing comparisons to other advanced safeguards technologies and to investigate combined techniques. Ultimately, the experiments demonstrated the possible utility of actively induced delayed γ-ray spectroscopy for fissionable material assay.

  10. Multilayer defects nucleated by substrate pits: a comparison of actinic inspection and non-actinic inspection techniques

    SciTech Connect

    Barty, A; Goldberg, K; Kearney, P; Rekawa, S; LaFontaine, B; Wood, O; Taylor, J S; Han, H

    2006-10-02

    The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank inspection tools must be able to accurately detect all critical defects while simultaneously having the minimum possible false-positive detection rate. We have recently observed and here report the identification of bump-type buried substrate defects, that were below the detection limit of a non-actinic (i.e. non-EUV) in inspection tool. Presently, the occurrence inspection of pit-type defects, their printability, and their detectability with actinic techniques and non-actinic commercial tools, has become a significant concern. We believe that the most successful strategy for the development of effective non-actinic mask inspection tools will involve the careful cross-correlation with actinic inspection and lithographic printing. In this way, the true efficacy of prototype inspection tools now under development can be studied quantitatively against relevant benchmarks. To this end we have developed a dual-mode actinic mask inspection system capable of scanning mask blanks for defects (with simultaneous EUV bright-field and dark-field detection) and imaging those same defects with a zoneplate microscope that matches or exceeds the resolution of EUV steppers.

  11. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Hector, Scott; Marmillion, Pat; Lercel, Michael

    2006-06-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. In 2002, a survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of mask equipment. The 2005 survey was the fourth in the current series of annual surveys. The survey data can be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. The results may be used to guide future investments on critical path issues. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services, operating cost factors, and equipment utilization. Because the questions covering operating cost factors and equipment utilization were just added to the survey, no trend analysis is possible. Within each category are many questions that together create a detailed profile of both the business and technical status of the mask industry. The assessment participation has changed from year to year. The 2005 survey, for example, includes inputs from eight major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market.

  12. Intelligent inspection system

    NASA Astrophysics Data System (ADS)

    May, Jeniece; Dale, Ken; Holloway, Mike; Gaby, Willard

    1997-01-01

    The intelligent inspection system is an advanced controller and analysis system for dimensional measuring machines dedicated to measuring surface of revolution mechanical parts. IIS was developed by the Lockheed Martin Energy Systems, Inc. Oak Ridge Y-12 plant because no commercial product was available to replace the obsolete computing systems on these important machines.

  13. Masks of the Universe

    NASA Astrophysics Data System (ADS)

    Harrison, Edward

    2011-11-01

    Preface; Introducing the masks; Part I. Worlds in the Making: 1. The magic Universe; 2. The mythic Universe; 3. The geometric Universe; 4. The medieval Universe; 5. The infinite Universe; 6. The mechanistic Universe; Part II. The Heart Divine: 7. Dance of the atoms and waves; 8. Fabric of space and time; 9. Nearer to the heart's desire; 10. The cosmic tide; 11. Do dreams ever come true?; Part III. The Cloud of Unknowing: 12. The witch universe; 13. The spear of Archytas; 14. All that is made; 15. The cloud of unknowing; 16. Learned ignorance.

  14. Mask fabrication process

    DOEpatents

    Cardinale, Gregory F.

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  15. New method of contour-based mask-shape compiler

    NASA Astrophysics Data System (ADS)

    Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

    2007-10-01

    We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

  16. Online inspection

    Technology Transfer Automated Retrieval System (TEKTRAN)

    An online line-scan imaging system capable of both hyperspectral and multispectral visible/near-infrared reflectance imaging was developed to inspect freshly slaughtered chickens on a processing line for wholesomeness. In-plant testing results indicated that the imaging inspection system achieved o...

  17. A Masked Photocathode in Photoinjector

    SciTech Connect

    Qiang, Ji

    2010-12-14

    In this paper, we propose a masked photocathode inside the photoinjector for generating high brightness election beam. Instead of mounting the photocathode onto an electrode, an electrode with small hole is used as a mask to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material easy by rotating the photocathode behind the electrode into the hole. Furthermore, this helps reduce the dark current or secondary electron emission from the photocathode material. The masked photocathode also provides transverse cut-off to a Gaussian laser beam that reduces electron beam emittance growth from nonlinear space-charge effects.

  18. The implementation of Mask-Ed: reflections of academic participants.

    PubMed

    Reid-Searl, Kerry; Levett-Jones, Tracy; Cooper, Simon; Happell, Brenda

    2014-09-01

    This paper profiles the findings from a study that explored the perspectives and experiences of nurse educators who implemented a novel simulation approach termed Mask-Ed. The technique involves the educator wearing a silicone mask and or body parts and transforming into a character. The premise of this approach is that the masked educator has domain specific knowledge related to the simulation scenario and can transmit this to learners in a way that is engaging, realistic, spontaneous and humanistic. Nurse educators charged with the responsibility of implementing Mask-Ed in three universities were invited to participate in the study by attending an introductory workshop, implementing the technique and then journaling their experiences, insights and perspectives over a 12 month period. The journal entries were then thematically analysed. Key themes were categorised under the headings of Preparation, Implementation and Impact; Reflexivity and Responsiveness; Student Engagement and Ownership; and Teaching and Learning. Mask-Ed is a simulation approach which allows students to interact with the 'characters' in humanistic ways that promote person-centred care and therapeutic communication. This simulation approach holds previously untapped potential for a range of learning experiences, however, to be effective, adequate resourcing, training, preparation and practice is required. PMID:24906681

  19. What Is Being Masked in Object Substitution Masking?

    ERIC Educational Resources Information Center

    Gellatly, Angus; Pilling, Michael; Cole, Geoff; Skarratt, Paul

    2006-01-01

    Object substitution masking (OSM) is said to occur when a perceptual object is hypothesized that is mismatched by subsequent sensory evidence, leading to a new hypothesized object being substituted for the first. For example, when a brief target is accompanied by a longer lasting display of nonoverlapping mask elements, reporting of target…

  20. Advanced technology and manufacturing practices for machining and inspecting metal matrix composites. Final CRADA report for CRADA number Y-1292-0092

    SciTech Connect

    Fell, H.A.; Shelton, J.E.; LaMance, G.M.; Kennedy, C.R.

    1995-02-26

    Lockheed Martin Energy Systems, Inc. (Energy Systems) and the Lanxide Corporation (Lanxide) negotiated a Cooperative Research and Development Agreement (CRADA) to develop advanced technology and manufacturing practices for machining and inspecting metal matrix composites (MMC). The objective of this CRADA was to develop machining parameters to allow manufacturing of automotive components from MMCs. These parts exhibit a range of shapes and dimensional tolerances and require a large number of machining operations. The common characteristic of the components is the use of the light weight MMC materials to replace heavier materials. This allows smaller and lighter moving parts and supporting structural components thereby increasing fuel mileage. The CRADA was divided into three areas: basic investigation of cutting parameters, establishment of a mock production line for components, and optimization of parameters in the mock facility. This report covers the manufacturing of MMCs and preliminary Phase I testing for silicon carbide having various loading percentages and extensive Phase I testing of cutting parameters on 30% alumina loaded aluminum. On January 26, 1995, a letter from the vice president, technology at Lanxide was issued terminating the CRADA due to changes in business. 9 refs., 18 figs., 3 tabs.

  1. Masks for high aspect ratio x-ray lithography

    NASA Astrophysics Data System (ADS)

    Malek, Chantal Khan; Jackson, Keith H.; Bonivert, William D.; Hruby, Jill

    1996-06-01

    The requirements for deep x-ray lithography (DXRL) masks are reviewed and a recently developed cost effective mask fabrication process is described. The review includes a summary of tabulated properties for materials used in the fabrication of DXRL masks. X-ray transparency and mask contrast are calculated for material combinations using simulations of exposure at the Advanced Light Source (ALS) at Berkeley, and compared to the requirements for standard x-ray lithography (XRL) mask technology. Guided by the requirements, a cost-effective fabrication process for manufacturing high contrast masks for DXRL has been developed. Thick absorber patterns (0960-1317/6/2/004/img7) on a thin silicon wafer (0960-1317/6/2/004/img8m) were made using contact printing in thick positive (Hoechst 4620) and negative (OCG 7020) photoresist and subsequent gold electrodeposition. Gold was deposited using a commercially available gold sulphite bath with low current density and good agitation. The resultant gold films were fine-grained and stress-free. Replication of such masks into 0960-1317/6/2/004/img9 thick acrylic sheets was performed at the ALS.

  2. Achromatic Focal Plane Mask for Exoplanet Imaging Coronagraphy

    NASA Technical Reports Server (NTRS)

    Newman, Kevin Edward; Belikov, Ruslan; Guyon, Olivier; Balasubramanian, Kunjithapatham; Wilson, Dan

    2013-01-01

    Recent advances in coronagraph technologies for exoplanet imaging have achieved contrasts close to 1e10 at 4 lambda/D and 1e-9 at 2 lambda/D in monochromatic light. A remaining technological challenge is to achieve high contrast in broadband light; a challenge that is largely limited by chromaticity of the focal plane mask. The size of a star image scales linearly with wavelength. Focal plane masks are typically the same size at all wavelengths, and must be sized for the longest wavelength in the observational band to avoid starlight leakage. However, this oversized mask blocks useful discovery space from the shorter wavelengths. We present here the design, development, and testing of an achromatic focal plane mask based on the concept of optical filtering by a diffractive optical element (DOE). The mask consists of an array of DOE cells, the combination of which functions as a wavelength filter with any desired amplitude and phase transmission. The effective size of the mask scales nearly linearly with wavelength, and allows significant improvement in the inner working angle of the coronagraph at shorter wavelengths. The design is applicable to almost any coronagraph configuration, and enables operation in a wider band of wavelengths than would otherwise be possible. We include initial results from a laboratory demonstration of the mask with the Phase Induced Amplitude Apodization coronagraph.

  3. Results from a new die-to-database reticle inspection platform

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Xiong, Yalin; Giusti, Michael; Walsh, Robert; Dayal, Aditya

    2007-03-01

    A new die-to-database high-resolution reticle defect inspection system has been developed for the 45nm logic node and extendable to the 32nm node (also the comparable memory nodes). These nodes will use predominantly 193nm immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, EUV, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of a new die-to-database inspection system is described. This new system is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes. Recent results from internal testing of the prototype systems are shown. The results include standard programmed defect test reticles and advanced 45nm and 32nm node reticles from industry sources. The results show high sensitivity and low false detections being achieved.

  4. Masked Proportional Routing

    NASA Technical Reports Server (NTRS)

    Wolpert, David

    2004-01-01

    Masked proportional routing is an improved procedure for choosing links between adjacent nodes of a network for the purpose of transporting an entity from a source node ("A") to a destination node ("B"). The entity could be, for example, a physical object to be shipped, in which case the nodes would represent waypoints and the links would represent roads or other paths between waypoints. For another example, the entity could be a message or packet of data to be transmitted from A to B, in which case the nodes could be computer-controlled switching stations and the links could be communication channels between the stations. In yet another example, an entity could represent a workpiece while links and nodes could represent, respectively, manufacturing processes and stages in the progress of the workpiece towards a finished product. More generally, the nodes could represent states of an entity and the links could represent allowed transitions of the entity. The purpose of masked proportional routing and of related prior routing procedures is to schedule transitions of entities from their initial states ("A") to their final states ("B") in such a manner as to minimize a cost or to attain some other measure of optimality or efficiency. Masked proportional routing follows a distributed (in the sense of decentralized) approach to probabilistically or deterministically choosing the links. It was developed to satisfy a need for a routing procedure that 1. Does not always choose the same link(s), even for two instances characterized by identical estimated values of associated cost functions; 2. Enables a graceful transition from one set of links to another set of links as the circumstances of operation of the network change over time; 3. Is preferably amenable to separate optimization of different portions of the network; 4. Is preferably usable in a network in which some of the routing decisions are made by one or more other procedure(s); 5. Preferably does not cause an

  5. Low-cost photomask inspection system

    NASA Astrophysics Data System (ADS)

    Gharpure, Damayanti C.; David, Sunil K.

    1995-12-01

    The competitive demand for increased production rates and tighter quality control in manufacturing integrated circuits requires inspection at higher speeds, finer resolution and at various stages during fabrication, all at an affordable cost. Manual inspection is tedious and entails a degree of concentration that is difficult to maintain over long periods of time. This paper presents a simple, low cost photo mask inspection system based on an IBM compatible PC. Both the reference comparison as well as feature extraction approaches have been implemented for guaranteed defect detection. The defects are further analyzed to obtain details regarding the location, dimension, and type of defect. The system also generates a diagnostic report providing detailed information regarding each defect, that has been detected, for use in on line mask repair. The paper describes configuration of the system along with the image processing algorithms used. The paper also discusses the results obtained, the specifications and over all performance of the system.

  6. EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond

    NASA Astrophysics Data System (ADS)

    Nozoe, Mari; Tanaka, Toshihiko; Kamo, Takashi; Kubo, Shinji; Tamori, Tomohiro; Takagi, Noriaki; Yamane, Takeshi; Terasawa, Tsuneo; Shigemura, Hiroyuki; Suga, Osamu

    2011-03-01

    It is important to control the defect level of the EUV lithography mask because of pellicle-less. We studied the resist patterned wafer inspection method using EB inspection system. In this paper, the defect detection sensitivity of EB inspection system is quantified using hp 32 nm line and space pattern with about 5 nm LWR (Line Width Roughness). Programmed defects of 13 nm narrowing and 10 nm widening have been detected successfully after the optimization of column and inspection condition. Next, the defects detected by mask inspection system and EB wafer inspection system were compared and were in good agreement for printed killer defects. In these results, EB inspection system is proved to be useful for EUV resist inspection. Further, we evaluated the resist material damage by EB inspection irradiation and indicated the direction of reducing the shrinkage.

  7. Phased Array Ultrasonic Inspection of Titanium Forgings

    SciTech Connect

    Howard, P.; Klaassen, R.; Kurkcu, N.; Barshinger, J.; Chalek, C.; Nieters, E.; Sun, Zongqi; Fromont, F. de

    2007-03-21

    Aerospace forging inspections typically use multiple, subsurface-focused sound beams in combination with digital C-scan image acquisition and display. Traditionally, forging inspections have been implemented using multiple single element, fixed focused transducers. Recent advances in phased array technology have made it possible to perform an equivalent inspection using a single phased array transducer. General Electric has developed a system to perform titanium forging inspection based on medical phased array technology and advanced image processing techniques. The components of that system and system performance for titanium inspection will be discussed.

  8. Combining Simultaneous with Temporal Masking

    ERIC Educational Resources Information Center

    Hermens, Frouke; Herzog, Michael H.; Francis, Gregory

    2009-01-01

    Simultaneous and temporal masking are two frequently used techniques in psychology and vision science. Although there are many studies and theories related to each masking technique, there are no systematic investigations of their mutual relationship, even though both techniques are often applied together. Here, the authors show that temporal…

  9. Masked Repetition Priming Using Magnetoencephalography

    ERIC Educational Resources Information Center

    Monahan, Philip J.; Fiorentino, Robert; Poeppel, David

    2008-01-01

    Masked priming is used in psycholinguistic studies to assess questions about lexical access and representation. We present two masked priming experiments using MEG. If the MEG signal elicited by words reflects specific aspects of lexical retrieval, then one expects to identify specific neural correlates of retrieval that are sensitive to priming.…

  10. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

    2008-04-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into eight categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were added to the survey only in 2005; therefore, meaningful trend analysis is not available.

  11. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2009-01-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  12. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  13. Fabless company mask technology approach: fabless but not fab-careless

    NASA Astrophysics Data System (ADS)

    Hisamura, Toshiyuki; Wu, Xin

    2009-10-01

    There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer

  14. Simultaneous source-mask optimization: a numerical combining method

    NASA Astrophysics Data System (ADS)

    Mülders, Thomas; Domnenko, Vitaliy; Küchler, Bernd; Klimpel, Thomas; Stock, Hans-Jürgen; Poonawala, Amyn A.; Taravade, Kunal N.; Stanton, William A.

    2010-09-01

    A new method for simultaneous Source-Mask Optimization (SMO) is presented. In order to produce optimum imaging fidelity with respect to exposure lattitude, depth of focus (DoF) and mask error enhancement factor (MEEF) the presented method aims to leverage both, the available degrees of freedom of a pixelated source and those available for the mask layout. The approach described in this paper is designed as to work with dissected mask polygons. The dissection of the mask patterns is to be performed in advance (before SMO) with the Synopsys Proteus OPC engine, providing the available degrees of freedom for mask pattern optimization. This is similar to mask optimization done for optical proximity correction (OPC). Additionally, however, the illumination source will be simultaneously optimized. The SMO approach borrows many of the performance enhancement methods of OPC software for mask correction, but is especially designed as to simultaneously optimize a pixelated source shape as nowadays available in production environments. Designed as a numerical optimization approach the method is able to assess in acceptable times several hundreds of thousands source-mask combinations for small, critical layout snippets. This allows a global optimization scheme to be applied to the SMO problem which is expected to better explore the optimization space and thus to yield an improved solution quality compared to local optimizations methods. The method is applied to an example system for investigating the impact of source constraints on the SMO results. Also, it is investigated how well possibly conflicting goals of low MEEF and large DoF can be balanced.

  15. Exploiting Small Leakages in Masks to Turn a Second-Order Attack into a First-Order Attack and Improved Rotating Substitution Box Masking with Linear Code Cosets.

    PubMed

    DeTrano, Alexander; Karimi, Naghmeh; Karri, Ramesh; Guo, Xiaofei; Carlet, Claude; Guilley, Sylvain

    2015-01-01

    Masking countermeasures, used to thwart side-channel attacks, have been shown to be vulnerable to mask-extraction attacks. State-of-the-art mask-extraction attacks on the Advanced Encryption Standard (AES) algorithm target S-Box recomputation schemes but have not been applied to scenarios where S-Boxes are precomputed offline. We propose an attack targeting precomputed S-Boxes stored in nonvolatile memory. Our attack targets AES implemented in software protected by a low entropy masking scheme and recovers the masks with 91% success rate. Recovering the secret key requires fewer power traces (in fact, by at least two orders of magnitude) compared to a classical second-order attack. Moreover, we show that this attack remains viable in a noisy environment or with a reduced number of leakage points. Eventually, we specify a method to enhance the countermeasure by selecting a suitable coset of the masks set. PMID:26491717

  16. Exploiting Small Leakages in Masks to Turn a Second-Order Attack into a First-Order Attack and Improved Rotating Substitution Box Masking with Linear Code Cosets

    PubMed Central

    DeTrano, Alexander; Karimi, Naghmeh; Karri, Ramesh; Guo, Xiaofei; Carlet, Claude; Guilley, Sylvain

    2015-01-01

    Masking countermeasures, used to thwart side-channel attacks, have been shown to be vulnerable to mask-extraction attacks. State-of-the-art mask-extraction attacks on the Advanced Encryption Standard (AES) algorithm target S-Box recomputation schemes but have not been applied to scenarios where S-Boxes are precomputed offline. We propose an attack targeting precomputed S-Boxes stored in nonvolatile memory. Our attack targets AES implemented in software protected by a low entropy masking scheme and recovers the masks with 91% success rate. Recovering the secret key requires fewer power traces (in fact, by at least two orders of magnitude) compared to a classical second-order attack. Moreover, we show that this attack remains viable in a noisy environment or with a reduced number of leakage points. Eventually, we specify a method to enhance the countermeasure by selecting a suitable coset of the masks set. PMID:26491717

  17. SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

    NASA Astrophysics Data System (ADS)

    Antohe, Alin O.; Balachandran, Dave; He, Long; Kearney, Patrick; Karumuri, Anil; Goodwin, Frank; Cummings, Kevin

    2015-03-01

    Availability of defect-free reflective mask has been one of the most critical challenges to extreme ultraviolet lithography (EUVL). To mitigate the risk, significant progress has been made on defect detection, pattern shifting, and defect repair. Clearly such mitigation strategies are based on the assumption that defect counts and sizes from incoming mask blanks must be below practical levels depending on mask specifics. The leading industry consensus for early mask product development is that there should be no defects greater than 80 nm in the quality area, 132 mm x 132 mm. In addition less than 10 defects smaller than 80 nm may be mitigable. SEMATECH has been focused on EUV mask blank defect reduction using Veeco Nexus TM IBD platform, the industry standard for mask blank production, and assessing if IBD technology can be evolved to a manufacturing solution. SEMATECH has recently announced a breakthrough reduction of defects in the mask blank deposition process resulting in the production of two defect-free EUV mask blanks at 54 nm inspection sensitivity (SiO2 equivalent). This paper will discuss the dramatic reduction of baseline EUV mask blank defects, review the current deposition process run and compare results with previous process runs. Likely causes of remaining defects will be discussed based on analyses as characterized by their compositions and whether defects are embedded in the multilayer stack or non-embedded.

  18. Automatic pattern localization across layout database and photolithography mask

    NASA Astrophysics Data System (ADS)

    Morey, Philippe; Brault, Frederic; Beisser, Eric; Ache, Oliver; Röth, Klaus-Dieter

    2016-03-01

    Advanced process photolithography masks require more and more controls for registration versus design and critical dimension uniformity (CDU). The distribution of the measurement points should be distributed all over the whole mask and may be denser in areas critical to wafer overlay requirements. This means that some, if not many, of theses controls should be made inside the customer die and may use non-dedicated patterns. It is then mandatory to access the original layout database to select patterns for the metrology process. Finding hundreds of relevant patterns in a database containing billions of polygons may be possible, but in addition, it is mandatory to create the complete metrology job fast and reliable. Combining, on one hand, a software expertise in mask databases processing and, on the other hand, advanced skills in control and registration equipment, we have developed a Mask Dataprep Station able to select an appropriate number of measurement targets and their positions in a huge database and automatically create measurement jobs on the corresponding area on the mask for the registration metrology system. In addition, the required design clips are generated from the database in order to perform the rendering procedure on the metrology system. This new methodology has been validated on real production line for the most advanced process. This paper presents the main challenges that we have faced, as well as some results on the global performances.

  19. Bringing mask repair to the next level

    NASA Astrophysics Data System (ADS)

    Edinger, K.; Wolff, K.; Steigerwald, H.; Auth, N.; Spies, P.; Oster, J.; Schneider, H.; Budach, M.; Hofmann, T.; Waiblinger, M.

    2014-10-01

    Mask repair is an essential step in the mask manufacturing process as the extension of 193nm technology and the insertion of EUV are drivers for mask complexity and cost. The ability to repair all types of defects on all mask blank materials is crucial for the economic success of a mask shop operation. In the future mask repair is facing several challenges. The mask minimum features sizes are shrinking and require a higher resolution repair tool. At the same time mask blanks with different new mask materials are introduced to optimize optical performance and long term durability. For EUV masks new classes of defects like multilayer and phase defects are entering the stage. In order to achieve a high yield, mask repair has to cover etch and deposition capabilities and must not damage the mask. These challenges require sophisticated technologies to bring mask repair to the next level. For high end masks ion-beam based and e-based repair technologies are the obvious choice when it comes to the repair of small features. Both technologies have their pro and cons. The scope of this paper is to review and compare the performance of ion-beam based mask repair to e-beam based mask repair. We will analyze the limits of both technologies theoretically and experimentally and show mask repair related performance data. Based on this data, we will give an outlook to future mask repair tools.

  20. Sensitivity of coded mask telescopes.

    PubMed

    Skinner, Gerald K

    2008-05-20

    Simple formulas are often used to estimate the sensitivity of coded mask x-ray or gamma-ray telescopes, but these are strictly applicable only if a number of basic assumptions are met. Complications arise, for example, if a grid structure is used to support the mask elements, if the detector spatial resolution is not good enough to completely resolve all the detail in the shadow of the mask, or if any of a number of other simplifying conditions are not fulfilled. We derive more general expressions for the Poisson-noise-limited sensitivity of astronomical telescopes using the coded mask technique, noting explicitly in what circumstances they are applicable. The emphasis is on using nomenclature and techniques that result in simple and revealing results. Where no convenient expression is available a procedure is given that allows the calculation of the sensitivity. We consider certain aspects of the optimization of the design of a coded mask telescope and show that when the detector spatial resolution and the mask to detector separation are fixed, the best source location accuracy is obtained when the mask elements are equal in size to the detector pixels. PMID:18493279

  1. 1D design style implications for mask making and CEBL

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.

    2013-09-01

    At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1

  2. EUV mask process development status for full field EUV exposure tool

    NASA Astrophysics Data System (ADS)

    Abe, Tsukasa; Adachi, Takashi; Akizuki, Hideo; Mohri, Hiroshi; Hayashi, Naoya; Ishikiriyama, Kosuke

    2008-05-01

    Extreme Ultra Violet Lithography (EUVL) is one of promising candidates for next generation lithography, 32nm node and beyond. Authors are developing EUV mask process targeting full field EUV exposure tool. Unlike the conventional optical mask, EUV mask is reflective type mask. To reflect 13.5nm wavelength light, 40 pairs of Mo/Si multilayer (ML) is used for reflective layer. Reflective layer is covered by capping layer. The capping layer protect reflective layer from absorber etching, defect repair and environmental condition. Top of absorber layer is covered by low reflective (LR) layer to achieve high contrast between the etched and not etched portion. Back side of EUV mask is covered by conductive film for electrostatic chuck use. In this paper, we will report current process development status of EUV mask for full field EUV exposure tool. Absorber patterning process including resist patterning and absorber etching were developed. Thin resist use and small resist damage dry etching process achieved pattern resolution of 32nm node. Defect inspection was also evaluated using DUV reticle inspection tool. Ta-based absorber on ruthenium (Ru) capped ML blanks was used for this evaluation. Because, Ru material has high resistivity to absorber etching plasma, it enable buffer layer less EUV mask structure. Ru also has better property on oxidation resistance compared to standard silicon (Si) capping layer.

  3. Additive Manufacturing Infrared Inspection

    NASA Technical Reports Server (NTRS)

    Gaddy, Darrell

    2014-01-01

    Additive manufacturing is a rapid prototyping technology that allows parts to be built in a series of thin layers from plastic, ceramics, and metallics. Metallic additive manufacturing is an emerging form of rapid prototyping that allows complex structures to be built using various metallic powders. Significant time and cost savings have also been observed using the metallic additive manufacturing compared with traditional techniques. Development of the metallic additive manufacturing technology has advanced significantly over the last decade, although many of the techniques to inspect parts made from these processes have not advanced significantly or have limitations. Several external geometry inspection techniques exist such as Coordinate Measurement Machines (CMM), Laser Scanners, Structured Light Scanning Systems, or even traditional calipers and gages. All of the aforementioned techniques are limited to external geometry and contours or must use a contact probe to inspect limited internal dimensions. This presentation will document the development of a process for real-time dimensional inspection technique and digital quality record of the additive manufacturing process using Infrared camera imaging and processing techniques.

  4. Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping field CDU on advanced production devices

    NASA Astrophysics Data System (ADS)

    Kim, Dae Jong; Yoo, Hyung Won; Kim, Chul Hong; Lee, Hak Kwon; Kim, Sung Su; Bae, Koon Ho; Spielberg, Hedvi; Lee, Yun Ho; Levi, Shimon; Bustan, Yariv; Rozentsvige, Moshe

    2010-03-01

    As design rules shrink, Critical Dimension Uniformity (CDU) and Line Edge Roughness (LER) have a dramatic effect on printed final lines and hence the need to control these parameters increases. Sources of CDU and LER variations include scanner auto-focus accuracy and stability, layer stack thickness, composition variations, and exposure variations. Process variations, in advanced VLSI production designs, specifically in memory devices, attributed to CDU and LER affect cell-to-cell parametric variations. These variations significantly impact device performance and die yield. Traditionally, measurements of LER are performed by CD-SEM or OCD metrology tools. Typically, these measurements require a relatively long time to set and cover only selected points of wafer area. In this paper we present the results of a collaborative work of the Process Diagnostic & Control Business Unit of Applied Materials and Hynix Semiconductor Inc. on the implementation of a complementary method to the CDSEM and OCD tools, to monitor defect density and post litho develop CDU and LER on production wafers. The method, referred to as Process Variation Monitoring (PVM) is based on measuring variations in the scattered light from periodic structures. The application is demonstrated using Applied Materials DUV bright field (BF) wafer inspection tool under optimized illumination and collection conditions. The UVisionTM has already passed a successful feasibility study on DRAM products with 66nm and 54nm design rules. The tool has shown high sensitivity to variations across an FEM wafer in both exposure and focus axes. In this article we show how PVM can help detection of Field to Field variations on DRAM wafers with 44nm design rule during normal production run. The complex die layout and the shrink in cell dimensions require high sensitivity to local variations within Dies or Fields. During normal scan of production wafers local Process variations are translated into GL (Grey Level) values

  5. The EOS CERES Global Cloud Mask

    NASA Technical Reports Server (NTRS)

    Berendes, T. A.; Welch, R. M.; Trepte, Q.; Schaaf, C.; Baum, B. A.

    1996-01-01

    To detect long-term climate trends, it is essential to produce long-term and consistent data sets from a variety of different satellite platforms. With current global cloud climatology data sets, such as the International Satellite Cloud Climatology Experiment (ISCCP) or CLAVR (Clouds from Advanced Very High Resolution Radiometer), one of the first processing steps is to determine whether an imager pixel is obstructed between the satellite and the surface, i.e., determine a cloud 'mask.' A cloud mask is essential to studies monitoring changes over ocean, land, or snow-covered surfaces. As part of the Earth Observing System (EOS) program, a series of platforms will be flown beginning in 1997 with the Tropical Rainfall Measurement Mission (TRMM) and subsequently the EOS-AM and EOS-PM platforms in following years. The cloud imager on TRMM is the Visible/Infrared Sensor (VIRS), while the Moderate Resolution Imaging Spectroradiometer (MODIS) is the imager on the EOS platforms. To be useful for long term studies, a cloud masking algorithm should produce consistent results between existing (AVHRR) data, and future VIRS and MODIS data. The present work outlines both existing and proposed approaches to detecting cloud using multispectral narrowband radiance data. Clouds generally are characterized by higher albedos and lower temperatures than the underlying surface. However, there are numerous conditions when this characterization is inappropriate, most notably over snow and ice of the cloud types, cirrus, stratocumulus and cumulus are the most difficult to detect. Other problems arise when analyzing data from sun-glint areas over oceans or lakes over deserts or over regions containing numerous fires and smoke. The cloud mask effort builds upon operational experience of several groups that will now be discussed.

  6. Hg-Mask Coronagraph

    NASA Astrophysics Data System (ADS)

    Bourget, P.; Veiga, C. H.; Vieira Martins, R.; Assus, P.; Colas, F.

    In order to optimize the occulting process of a Lyot coronagraph and to provide a high dynamic range imaging, a new kind of occulting disk has been developed at the National Observatory of Rio de Janeiro. A mercury (Hg) drop glued onto an optical window by molecular cohesion and compressed by a pellicle film is used as the occulting disk. The minimum of the superficial tension potential function provides an optical precision (lambda/100) of the toric free surface of the mercury. This process provides a size control for the adaptation to the seeing conditions and to the apparent diameter of a resolved object, and in the case of adaptive optics, to the Airy diameter fraction needed. The occultation is a three dimensional process near the focal plane on the toric free surface that provides an apodization of the occultation. The Hg-Mask coronagraph has been projected for astrometric observations of faint satellites near to Jovian planets and works since 2000 at the 1.6 m telescope of the Pico dos Dias Observatory (OPD - Brazil).

  7. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    SciTech Connect

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  8. 28 CFR 75.5 - Inspection of records.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... RECORD-INSPECTION PROVISIONS § 75.5 Inspection of records. (a) Authority to inspect. Investigators authorized by the Attorney General (hereinafter “investigators”) are authorized to enter without delay and at... other provision of the Act (hereinafter “investigator”). (b) Advance notice of inspections....

  9. Mask materials for powder blasting

    NASA Astrophysics Data System (ADS)

    Wensink, Henk; Jansen, Henri V.; Berenschot, J. W.; Elwenspoek, Miko C.

    2000-06-01

    Powder blasting, or abrasive jet machining (AJM), is a technique in which a particle jet is directed towards a target for mechanical material removal. It is a fast, cheap and accurate directional etch technique for brittle materials such as glass, silicon and ceramics. The particle jet (which expands to about 1 cm in diameter) can be optimized for etching, while the mask defines the small and complex structures. The quality of the mask influences the performance of powder blasting. In this study we tested and compared several mask types and added a new one: electroplated copper. The latter combines a highly resistant mask material for powder blasting with the high-resolution capabilities of lithography, which makes it possible to obtain an accurate pattern transfer and small feature sizes (<50 µm).

  10. Mask technology for EUV lithography

    NASA Astrophysics Data System (ADS)

    Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

    1999-04-01

    Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

  11. Ultrasonic Inspection

    NASA Technical Reports Server (NTRS)

    1976-01-01

    Automation Industries Inc. has had more than $2 million in contracts to produce innovative equipment for the Apollo program. When Marshall Space Flight Center sought a fast nondestructive way to inspect butt welds in aluminum alloys for spacecraft, the company developed a reliable ultrasonic device using multiple transducers called "delta manipulators" which detect lack of weld penetration not readily seen in radiograph automation. Industry soon adapted the ultrasonic equipment to a unique rail inspection device that saves countless man hours. Device is contained in self propelled railroad cars produced and operated by the company to check old track welds for deterioration.

  12. Investigation of polarization effects on new mask materials

    NASA Astrophysics Data System (ADS)

    Bubke, Karsten; Teuber, Silvio; Hoellein, Ingo; Becker, Hans; Seitz, Holger; Buttgereit, Ute

    2005-05-01

    As microlithography moves to smaller critical dimensions, structures on reticles reach feature sizes comparable to the operating wavelength. Furthermore, with increasing NA the angle of incidence of light illuminating the mask steadily increases. In particular for immersion lithography this will have severe consequences on the printing behavior of reticles. Polarization effects arise which have an impact on, among other things, the contrast of the printed image. Angular effects have to be considered when aggressive off-axis illumination schemes are used. Whereas numerous articles have been published on those effects and the underlying theory seems to be understood, there is a strong need for experimental verification of properties of real masks at the actinic wavelength. This paper presents measurements of polarization effects on different mask blank types produced at Schott Lithotec including chrome and alternative absorber binary mask blanks, as well as phase shift mask blanks. Thickness and optical dispersion of all layers were determined using grazing incidence x-ray reflectometry (GIXR) and variable angle spectroscopic ellipsometry (VASE). The set of mask blanks was patterned using a special design developed at the Advanced Mask Technology Center (AMTC) to allow measurements at different line width and pitch sizes. VUV Ellipsometry was then used to measure the properties of the structured materials, in particular the intensities in the 0th and 1st diffraction order for both polarization directions and varying angle of incidence. The degree of polarization of respective mask types is evaluated for dense lines with varying pitches and duty cycles. The results obtained experimentally are compared with simulations based on rigorous coupled wave analysis (RCWA).

  13. Cosmic Masks Still Dance

    NASA Astrophysics Data System (ADS)

    Block, David L.; Puerari, Ivânio; Frogel, Jay A.; Eskridge, Paul B.; Stockton, Alan; Fuchs, Burkhard

    The Hubble classification scheme of galaxies is based on their optical appearance or `masks'. As one goes from early to late type spirals, both barred and unbarred, the optical appearance will be dominated more and more by the young Population I, i.e., blue stars and dust. Atlases reveal the rich variety of responses of the Population I component of gas and dust (the mask) to the underlying, older, stellar population. However, the gaseous Population I component, may only constitute 5 percent of the dynamical mass of the galaxy. Masks of negligible mass may conceal the human face - and that of galaxy. In the near-infrared, the morphology of older star-dominated disk indicates a simple classification scheme: the dominant Fourier m-mode in the dust penetrated regime, and the associated pitch angle. A ubiquity of low m=1 and m=2 modes is confirmed. On the basis of deprojected H (1.65 μm) and K' (2.1μm) images, we propose that the evolved stellar disks may be grouped into three principal dust penetrated archetypes: those with tightly wound stellar arms characterised by pitch angles at K' of ~ 10^° (the α class), an intermediate group with pitch angles of ~ 25^° (the β class) and thirdly, those with open spirals demarcated by pitch angles at K' of ~ 40^° (the γ bin). Flat or falling rotation curves give rise to the tightly wound α class; rising rotation curves are associated with the open γ class. The observed dust penetrated classes are inextricably related to the rate of shear in the stellar disk, as determined by A/ω. Here A is the first Oort constant andω denotes the angular velocity. There is no correlation between our dust penetrated classes and optical Hubble binning; the Hubble tuning fork does not constrain the morphology of the old stellar Population II disks. NGC 3223 and NGC 7083 (both SbI-II and almost the same absolute blue magnitude) have identical Hubble types and identical luminosity classes; the dust penetrated disk of NGC 3223 has tightly

  14. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  15. Low-defect reflective mask blanks for extreme ultraviolet lithography

    SciTech Connect

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Walton, C; Ray-Chaudhuri, A

    1999-03-11

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm² @ 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm² for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm² in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10-2/cm² level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.

  16. Visual Masking During Pursuit Eye Movements

    ERIC Educational Resources Information Center

    White, Charles W.

    1976-01-01

    Visual masking occurs when one stimulus interferes with the perception of another stimulus. Investigates which matters more for visual masking--that the target and masking stimuli are flashed on the same part of the retina, or, that the target and mask appear in the same place. (Author/RK)

  17. From nightmares to sweet dreams: inspection of aggressive OPC on 14nm reticles (and beyond) using a novel high-NA and low-NA dual method

    NASA Astrophysics Data System (ADS)

    Badger, Karen D.; Hibbs, Michael; Seki, Kazunori; Broadbent, William; Hutchinson, Trent; Redding, Vincent

    2015-10-01

    To prevent catastrophic failures in wafer manufacturing lines from reticle defects, mask manufacturers employ sophisticated reticle inspection systems to examine every shape on every reticle for defects. The predominant inspection systems in use today compare the reticle directly with the design database using high-NA optics (typically 3x higher resolution at the reticle plane than advanced wafer scanners). High-NA optical inspection with its high signal to noise ratio (SNR) can readily detect small defects before they have lithographic impact, thus ensuring reticle quality. However, when inspecting certain aggressive OPC, high-NA inspection can overload on small OPC defects which do not have lithographic impact and thus, should generally be ignored. Whereas, inspecting a reticle as imaged in the wafer plane (low-NA in the reticle plane) will generally ignore such small OPC defects; however, the SNR is often too low for certain defect types to provide the needed defect detection sensitivity to ensure reticle quality. This paper discusses the design and performance of a novel reticle inspection method using high-NA and low-NA dual optical imaging and processing. This method offers the high defect sensitivity of high-NA inspection with the OPC tolerance of low-NA inspection. These two imaging methods are blended together into a seamless inspection mode suitable for aggressive OPC of the 14nm generation and beyond. The test reticles include 14nm logic designs containing aggressive OPC and native defects, as well as a 14 nm test reticle containing relevant programmed defects. Defect lithographic significance is judged using a Zeiss AIMS™ system.

  18. Highly reliable 198-nm light source for semiconductor inspection based on dual fiber lasers

    NASA Astrophysics Data System (ADS)

    Imai, Shinichi; Matsuki, Kazuto; Kikuiri, Nobutaka; Takayama, Katsuhiko; Iwase, Osamu; Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Wada, Satoshi

    2010-02-01

    Highly reliable DUV light sources are required for semiconductor applications such as a photomask inspection. The mask inspection for the advanced devices requires the UV lightning wavelength beyond 200 nm. By use of dual fiber lasers as fundamental light sources and the multi-wavelength conversion we have constructed a light source of 198nm with more than 100 mW. The first laser is Yb doped fiber laser with the wavelength of 1064 nm; the second is Er doped fiber laser with 1560 nm. To obtain the robustness and to simplify the configuration, the fundamental lights are run in the pulsed operation and all wavelength conversions are made in single-pass scheme. The PRFs of more than 2 MHz are chosen as an alternative of a CW light source; such a high PRF light is equivalent to CW light for inspection cameras. The light source is operated described as follows. Automatic weekly maintenance within an hour is done if it is required; automatic monthly maintenance within 4 hours is done on fixed date per month; manufacturer's maintenance is done every 6 month. Now this 198 nm light sources are equipped in the leading edge photomask inspection machines.

  19. Fabrication of defect-free full-field pixelated phase mask

    NASA Astrophysics Data System (ADS)

    Cheng, Wen-Hao; Farnsworth, Jeff; Kwok, Wai; Jamieson, Andrew; Wilcox, Nathan; Vernon, Matt; Yung, Karmen; Liu, Yi-Ping; Kim, Jun; Frendberg, Eric; Chegwidden, Scott; Schenker, Richard; Borodovsky, Yan

    2008-03-01

    Pixelated phase masks rendered from computational lithography techniques demand one generation-ahead mask technology development. In this paper, we reveal the accomplishment of fabricating Cr-less, full field, defect-free pixilated phase masks, including integration of tapeout, front-end patterning and backend defect inspection, repair, disposition and clean. This work was part of a comprehensive program within Intel which demonstrated microprocessor device yield. To pattern mask pixels with lateral sizes <100nm and vertical depth of 170nm, tapeout data management, ebeam write time management, aggressive pattern resolution scaling, etch improvement, new tool insertion and process integration were co-optimized to ensure good linearity of lateral, vertical dimensions and sidewall angle of glass pixels of arbitrary pixelated layout, including singlets, doublets, triplets, touch-corners and larger scale features of structural tones including pit/trench and pillar/mesa. The final residual systematic mask patterning imperfections were corrected and integrated upstream in the optical model and design layout. The volume of 100nm phase pixels on a full field reticle is on the order tera-scale magnitude. Multiple breakthroughs in backend mask technology were required to achieve a defect free full field mask. Specifically, integration of aerial image-based defect inspection, 3D optical model-based high resolution ebeam repair and disposition were introduced. Significant reduction of pixel mask specific defect modes, such as electro static discharge and glass pattern collapse, were executed to drive defect level down to single digit before attempt of repair. The defect printability and repair yield were verified downstream through silicon wafer print test to validate defect free mask performance.

  20. Robot Mounted Laser Scanner For Paint Inspection

    NASA Astrophysics Data System (ADS)

    West, R. N.; Baker, L. R.; Atkinson, R. M.; Claridge, J. F.

    1989-01-01

    The final inspection of manufactured goods is a labour intensive activity. The use of human inspectors has a number of potential disadvantages; it can be expensive, the inspection standard applied is subjective and the inspection process can be slow compared with the production process. The use of automatic optical and electronic systems to perform the inspection task is now a growing practice but, in general, such systems have been applied to small components which are accurately presented. Recent advances in vision systems and robot control technology have made possible the installation of an automated paint inspection system at the Austin Rover Group's plant at Cowley, Oxford.

  1. Automated SEM metrology of wafers printed using a SCAA mask

    NASA Astrophysics Data System (ADS)

    Desai, Sunil; Ebihara, Takeaki; Levenson, David; White, Sylvia

    2002-07-01

    The massive amount of data necessary to qualify a new 100nm generation technology can be efficiency collected using a CD-SEM and analyzed using Klarity ProData. By comparing the linewidths, space widths, and pitches printed in resists with different focus, exposure does, and numerical aperture with the measured reticle parameters, one can be determine optimal processing conditions and the required biasing rules for the new technology. The Sidewall Chrome Alternating Aperture Mask, a next generation alternating phase shift mask structure, is especially suitable for this as all relevant mask features are visible from the top surface which, however, is not planar and thus can confuse optical mask inspection tools. Resist patterns with line-space pitches from 220nm to 800nm and isolated lines - as well as the reticle - were measured sing a KLA-Tencor 8250 CD-SEM and analyzed with ProData. At the isofocal dose, the 70nm line - 150nm space reticle pattern printed with equal 110 nm lines and spaces at NA equals 0.63 on a Canon FPA-5000 ES3 248 nm step and scan tool, with a process window that overlapped those of less dense approximately 100 nm features.

  2. Planarization of topography with spin-on carbon hard mask

    NASA Astrophysics Data System (ADS)

    Noya, Go; Hama, Yusuke; Ishii, Maki; Nakasugi, Shigemasa; Kudo, Takanori; Padmanaban, Munirathna

    2016-03-01

    Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterning technology is used and planarization of topography become more important and challenging ever before. In order to develop next generation SOC, one of focuses is planarization of topography. SOC with different concepts for improved planarization and the influence of thermal flow temperature, crosslink, film shrinkage, baking conditions on planarization and filling performance are described in this paper.

  3. Rewritable photochromic focal plane masks

    NASA Astrophysics Data System (ADS)

    Molinari, Emilio; Bertarelli, Chiara; Bianco, Andrea; Bortoletto, Fabio; Conconi, Paolo; Crimi, Giuseppe; Gallazzi, Maria C.; Giro, Enrico; Lucotti, Andrea; Pernechele, Claudio; Zerbi, Filippo M.; Zerbi, Giuseppe

    2003-02-01

    The application of organic photochromic materials in astronomy is opening new possibilities which we are investigating in order to design innovative devices for future instrumentation. The photochromic property of transparent/opaque transition (although in a limited wavelength range) and the changes in intrinsic refractive index have led our studies to application in astronomic spectrographs, both as focal plane mask (for MOS application) and as dispersive elements (volume phase holographic gratings, VPHG), respectively. In both cases the possibility to write and erase devices with suitable irradiation has revealed a new perspective for non-disposable and fully customizable items for spectroscopy. Pursuing this goal we have synthesized a series of novel photochromic materials belonging to the diarylethenes. They fulfill the requirements of thermal stability and fatigue resistance necessary to build functional devices. Prototypes of high contrast focal plane mask working in the H-alpha spectral region have been manufactured and characterized both in laboratory and with the AFOSC camera at Asiago telescope (1.8 m). A custom writing robot (ARATRO) which, taking imaging frames and with the aid of interactive mask design software and ad hoc control electronics, is able to write MOS masks, has been constructed. The design of the MOS masks allow the fitting in the AFOSC slit wheel. The overall set-up is ready for the sky tests.

  4. Printability study of pattern defects in the EUV mask as a function of hp nodes

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Geun; Seo, Hwan-Seok; Kang, In-Yong; Jeong, Chang Young; Huh, Sungmin; Na, Jihoon; Kim, Seong-Sue; Jeon, Chan-Uk; Mochi, Iacopo; Goldberg, Kenneth A.

    2012-03-01

    Amplitude defects (or absorber defects), which are located in absorber patterns or multilayer surface, can be repaired during mask process while phase defects (or multilayer defects) cannot. Hence, inspection and handling of both defects should be separately progressed. Defect printability study of pattern defects is very essential since it provides criteria for mask inspection and repair. Printed defects on the wafer kill cells and reduce the device yield in wafer processing, and thus all the printable defects have to be inspected and repaired during the mask fabrication. In this study, pattern defect printability of the EUV mask as a function of hp nodes is verified by EUV exposure experiments. For 3x nm hp nodes, defect printability is evaluated by NXE3100. For 2x nm hp node, since resolution of a current EUV scanner is not enough, SEMATECH-Berkeley actinic inspection tool (AIT) as well as micro-field exposure tool (MET) in LBNL are utilized to verify it,. Furthermore those printability results are compared with EUV simulations. As a result, we define size of defects to be controlled in each device node.

  5. Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging

    SciTech Connect

    Fan, Yu-Jen; Yankulin, Leonid; Antohe, Alin; Garg, Rashi; Thomas, Petros; Mbanaso, Chimaobi; Wuest, Andreas; Goodwin, Frank; Huh, Sungmin; Naulleau, Patrick; Goldlberg, Kenneth; Mochi, Iacopo; Denbeaux, Gregory

    2009-02-02

    Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron microscope (SEM) and printed with the SEMA TECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the mask was analyzed using the SEMA TECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon contamination on the absorbing features and printing performance. To understand the contamination topography, simulations were performed based on calculated aerial images and resist parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses of the contamination layer, as well as the imaging performance on printed features.

  6. Cloud and Cloud Shadow Masking Using Multi-Temporal Cloud Masking Algorithm in Tropical Environmental

    NASA Astrophysics Data System (ADS)

    Candra, D. S.; Phinn, S.; Scarth, P.

    2016-06-01

    A cloud masking approach based on multi-temporal satellite images is proposed. The basic idea of this approach is to detect cloud and cloud shadow by using the difference reflectance values between clear pixels and cloud and cloud shadow contaminated pixels. Several bands of satellite image which have big difference values are selected for developing Multi-temporal Cloud Masking (MCM) algorithm. Some experimental analyses are conducted by using Landsat-8 images. Band 3 and band 4 are selected because they can distinguish between cloud and non cloud. Afterwards, band 5 and band 6 are used to distinguish between cloud shadow and clear. The results show that the MCM algorithm can detect cloud and cloud shadow appropriately. Moreover, qualitative and quantitative assessments are conducted using visual inspections and confusion matrix, respectively, to evaluate the reliability of this algorithm. Comparison between this algorithm and QA band are conducted to prove the reliability of the approach. The results show that MCM better than QA band and the accuracy of the results are very high.

  7. Informational masking and musical training

    NASA Astrophysics Data System (ADS)

    Oxenham, Andrew J.; Fligor, Brian J.; Mason, Christine R.; Kidd, Gerald

    2003-09-01

    The relationship between musical training and informational masking was studied for 24 young adult listeners with normal hearing. The listeners were divided into two groups based on musical training. In one group, the listeners had little or no musical training; the other group was comprised of highly trained, currently active musicians. The hypothesis was that musicians may be less susceptible to informational masking, which is thought to reflect central, rather than peripheral, limitations on the processing of sound. Masked thresholds were measured in two conditions, similar to those used by Kidd et al. [J. Acoust. Soc. Am. 95, 3475-3480 (1994)]. In both conditions the signal was comprised of a series of repeated tone bursts at 1 kHz. The masker was comprised of a series of multitone bursts, gated with the signal. In one condition the frequencies of the masker were selected randomly for each burst; in the other condition the masker frequencies were selected randomly for the first burst of each interval and then remained constant throughout the interval. The difference in thresholds between the two conditions was taken as a measure of informational masking. Frequency selectivity, using the notched-noise method, was also estimated in the two groups. The results showed no difference in frequency selectivity between the two groups, but showed a large and significant difference in the amount of informational masking between musically trained and untrained listeners. This informational masking task, which requires no knowledge specific to musical training (such as note or interval names) and is generally not susceptible to systematic short- or medium-term training effects, may provide a basis for further studies of analytic listening abilities in different populations.

  8. Psychometric functions for informational masking

    NASA Astrophysics Data System (ADS)

    Lutfi, Robert A.; Kistler, Doris J.; Callahan, Michael R.; Wightman, Frederic L.

    2003-12-01

    The term informational masking has traditionally been used to refer to elevations in signal threshold resulting from masker uncertainty. In the present study, the method of constant stimuli was used to obtain complete psychometric functions (PFs) from 44 normal-hearing listeners in conditions known to produce varying amounts of informational masking. The listener's task was to detect a pure-tone signal in the presence of a broadband noise masker (low masker uncertainty) and in the presence of multitone maskers with frequencies and amplitudes that varied at random from one presentation to the next (high masker uncertainty). Relative to the broadband noise condition, significant reductions were observed in both the slope and the upper asymptote of the PF for multitone maskers producing large amounts of informational masking. Slope was affected more for some listeners and conditions while asymptote was affected more for others; consequently, neither parameter alone was highly predictive of individual thresholds or the amount of informational masking. Mean slopes and asymptotes varied nonmonotonically with the number of masker components in a manner similar to mean thresholds, particularly when the estimated effect of energetic masking on thresholds was subtracted out. As in past studies, the threshold data were well described by a model in which trial-by-trial judgments are based on a weighted sum of levels in dB at the output of independent auditory filters. The psychometric data, however, complicated the model's interpretation in two ways: First, they suggested that, depending on the listener and condition, the weights can either reflect a fixed influence of masker components on each trial or the effect of occasionally mistaking a masker component for the signal from trial to trial. Second, they indicated that in either case the variance of the underlying decision variable as estimated from PF slope is not by itself great enough to account for the observed changes

  9. Self-masking subtraction tomosynthesis

    SciTech Connect

    Chakraborty, D.P.; Yester, M.V.; Barnes, G.T.; Lakshminarayanan, A.V.

    1984-01-01

    The authors tested the image quality and dose savings of self-masking subtraction tomosynthesis (SST), which combines digital tomosynthesis with subtraction of a blurred self-mask. High-quality images of the inner ear of a head phantom were obtained at moderate dose savings. Although they were taken with linear motion, they did not exhibit the streaking due to off-fulcrum objects that is characteristic of conventional linear tomography. SST could reduce patient dose by a factor of at least 12 in examinations of the inner ear, and the mechanical aspects can be implemented with moderate modifications of existing instrumentation.

  10. Mask roughness induced LER: geometric model at long correlation lengths

    SciTech Connect

    McClinton, Brittany M.; Naulleau, Patrick P.

    2011-02-11

    Collective understanding of how both the resist and line-edge roughness (LER) on the mask affect the final printed LER has made significant advances. What is poorly understood, however, is the extent to which mask surface roughness couples to image plane LER as a function of illumination conditions, NA, and defocus. Recently, progress has been made in formulating a simplified solution for mask roughness induced LER. Here, we investigate the LER behavior at long correlation lengths of surface roughness on the mask. We find that for correlation lengths greater than 3/NA in wafer dimensions and CDs greater than approximately 0.75/NA, the previously described simplified model, which remains based on physical optics, converges to a 'geometric regime' which is based on ray optics and is independent of partial coherence. In this 'geometric regime', the LER is proportional to the mask slope error as it propagates through focus, and provides a faster alternative to calculating LER in contrast to either full 2D aerial image simulation modeling or the newly proposed physical optics model. Data is presented for both an NA = 0.32 and an NA = 0.5 imaging system for CDs of 22-nm and 50-nm horizontal-line-dense structures.

  11. Intelligent Automated Nuclear Fuel Pellet Inspection System

    SciTech Connect

    S. Keyvan

    1999-11-01

    At the present time, nuclear pellet inspection is performed manually using naked eyes for judgment and decisionmaking on accepting or rejecting pellets. This current practice of pellet inspection is tedious and subject to inconsistencies and error. Furthermore, unnecessary re-fabrication of pellets is costly and the presence of low quality pellets in a fuel assembly is unacceptable. To improve the quality control in nuclear fuel fabrication plants, an automated pellet inspection system based on advanced techniques is needed. Such a system addresses the following concerns of the current manual inspection method: (1) the reliability of inspection due to typical human errors, (2) radiation exposure to the workers, and (3) speed of inspection and its economical impact. The goal of this research is to develop an automated nuclear fuel pellet inspection system which is based on pellet video (photographic) images and uses artificial intelligence techniques.

  12. Generative inspection process planner for integrated production

    SciTech Connect

    Brown, C.W. . Kansas City Div.); Gyorog, D.A. . Dept. of Mechanical Engineering)

    1990-04-01

    This work describes the design prototype development of a generative process planning system for dimensional inspection. The system, IPPEX (Inspection Process Planning EXpert), is a rule-based expert system for integrated production. Using as advanced product modeler, relational databases, and artificial intelligence techniques, IPPEX generates the process plan and part program for the dimensional inspection of products using CMMs. Through an application interface, the IPPEX system software accesses product definition from the product modeler. The modeler is a solid geometric modeler coupled with a dimension and tolerance modeler. Resource data regarding the machines, probes, and fixtures are queried from databases. IPPEX represents inspection process knowledge as production rules and incorporates an embedded inference engine to perform decision making. The IPPEX system, its functional architecture, system architecture, system approach, product modeling environment, inspection features, inspection knowledge, hierarchical planning strategy, user interface formats, and other fundamental issues related to inspection planning and part programming for CMMs are described. 27 refs., 16 figs., 4 tabs.

  13. An operator interface design for a telerobotic inspection system

    NASA Technical Reports Server (NTRS)

    Kim, Won S.; Tso, Kam S.; Hayati, Samad

    1993-01-01

    The operator interface has recently emerged as an important element for efficient and safe interactions between human operators and telerobotics. Advances in graphical user interface and graphics technologies enable us to produce very efficient operator interface designs. This paper describes an efficient graphical operator interface design newly developed for remote surface inspection at NASA-JPL. The interface, designed so that remote surface inspection can be performed by a single operator with an integrated robot control and image inspection capability, supports three inspection strategies of teleoperated human visual inspection, human visual inspection with automated scanning, and machine-vision-based automated inspection.

  14. Optical inspection system for cylindrical objects

    DOEpatents

    Brenden, Byron B.; Peters, Timothy J.

    1989-01-01

    In the inspection of cylindrical objects, particularly O-rings, the object is translated through a field of view and a linear light trace is projected on its surface. An image of the light trace is projected on a mask, which has a size and shape corresponding to the size and shape which the image would have if the surface of the object were perfect. If there is a defect, light will pass the mask and be sensed by a detector positioned behind the mask. Preferably, two masks and associated detectors are used, one mask being convex to pass light when the light trace falls on a projection from the surface and the other concave, to pass light when the light trace falls on a depression in the surface. The light trace may be either dynamic, formed by a scanned laser beam, or static, formed by such a beam focussed by a cylindrical lens. Means are provided to automatically keep the illuminating receiving systems properly aligned.

  15. Rigorous diffraction analysis using geometrical theory of diffraction for future mask technology

    NASA Astrophysics Data System (ADS)

    Chua, Gek S.; Tay, Cho J.; Quan, Chenggen; Lin, Qunying

    2004-05-01

    Advanced lithographic techniques such as phase shift masks (PSM) and optical proximity correction (OPC) result in a more complex mask design and technology. In contrast to the binary masks, which have only transparent and nontransparent regions, phase shift masks also take into consideration transparent features with a different optical thickness and a modified phase of the transmitted light. PSM are well-known to show prominent diffraction effects, which cannot be described by the assumption of an infinitely thin mask (Kirchhoff approach) that is used in many commercial photolithography simulators. A correct prediction of sidelobe printability, process windows and linearity of OPC masks require the application of rigorous diffraction theory. The problem of aerial image intensity imbalance through focus with alternating Phase Shift Masks (altPSMs) is performed and compared between a time-domain finite-difference (TDFD) algorithm (TEMPEST) and Geometrical theory of diffraction (GTD). Using GTD, with the solution to the canonical problems, we obtained a relationship between the edge on the mask and the disturbance in image space. The main interest is to develop useful formulations that can be readily applied to solve rigorous diffraction for future mask technology. Analysis of rigorous diffraction effects for altPSMs using GTD approach will be discussed.

  16. DIVAS: an integrated networked system for mask defect dispositioning and defect management

    NASA Astrophysics Data System (ADS)

    Munir, Saghir; Bald, Dan; Tolani, Vikram; Ghadiali, Firoz

    2003-06-01

    Mask quality is a prime concern to the Intel Mask Operation (IMO) and the Intel wafer fabrication customers. Extreme concern is taken to inspect and repair all defects before shipment. Given that the classification and repair of defects detected by inspection systems is labor intensive, the procedure is prone to human error. Futhermore, since operators manually disposition hundreds of defects each day, it is virtually impossible to eliminate all misclassifications. Due to diffraction effects, not all defects resolve on a wafer. Hence, a defect that an operator may classify as 'real' may indeed be 'lithographically insignifincant'. Conversely an operator may miss a defect that prints, causing a serious reduction in product yield. The DIVAS (Defect, Inspection, Viewing, Archiving and Simulation) system has been described previously and was developed to address these manual classification issues. This paper outlines the fully automated system deployed in a production environment.

  17. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  18. Multiple beam mask writers: an industry solution to the write time crisis

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.

    2010-09-01

    The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

  19. EUV mask multilayer defects and their printability under different multilayer deposition conditions

    NASA Astrophysics Data System (ADS)

    Kwon, Hyuk Joo; Harris-Jones, Jenah; Cordes, Aaron; Satake, Masaki; Li, Ying; Mochi, Iacopo; Goldberg, Kenneth A.

    2012-03-01

    Extreme ultraviolet (EUV) patterning appears feasible using currently available EUV exposure tools, but some issues must still be resolved for EUV patterning to be used in production. Defects in EUV mask blanks are one such major issue and inspection tools are needed to detect phase defects on EUV mask blanks that could possibly print on the wafer. Currently available inspection tools can capture defects on the mask, but they also need to be able to classify possible printable defects. Defect classification for repair and mitigation of printable defects is very difficult using deep ultraviolet (DUV) inspection tools; however, if the actinic inspection tool (AIT) could gather defect information from more multilayer (ML) stacks, it may be able to separate printable defects from unprintable defects. If unprintable defects could be eliminated, the defect information could be used for mask pattern shifts to reduce printable defects. Fewer defects would need to be repaired if there were a better chance of capturing printable defects using an actinic inspection tool. Being able to detect printable defects on EUV blanks is therefore critical in mask making. In this paper, we describe the characterization of programmed ML phase defects in the manufacturing of EUV mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). Programmed defects of various dimensions were prepared using e-beam patterning technology and Mo/Si MLs were deposited with SEMATECH's best known method (BKM) and pit smoothing conditions on programmed defects to characterize ML phase defects. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to study ML profile changes, while SEMATECH's AIT was used to image ML phase defects and predict their printability. Multilayer defect reconstruction (MDR) was done using AFM images, which were then compared to TEM images. Defect printability simulation (DPS) was used for

  20. "The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

    ERIC Educational Resources Information Center

    Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

    2015-01-01

    Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

  1. Physiological functioning of the ear and masking

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The physiological functions of the ear and the role masking plays in speech communication are examined. Topics under investigation include sound analysis of the ear, the aural reflex, and various types of noise masking.

  2. Using synchrotron light to accelerate EUV resist and mask materials learning

    NASA Astrophysics Data System (ADS)

    Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Jones, Gideon; McClinton, Brittany; Miyakawa, Ryan; Mochi, Iacopo; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

    2011-03-01

    As commercialization of extreme ultraviolet lithography (EUVL) progresses, direct industry activities are being focused on near term concerns. The question of long term extendibility of EUVL, however, remains crucial given the magnitude of the investments yet required to make EUVL a reality. Extendibility questions are best addressed using advanced research tools such as the SEMATECH Berkeley microfield exposure tool (MET) and actinic inspection tool (AIT). Utilizing Lawrence Berkeley National Laboratory's Advanced Light Source facility as the light source, these tools benefit from the unique properties of synchrotron light enabling research at nodes generations ahead of what is possible with commercial tools. The MET for example uses extremely bright undulator radiation to enable a lossless fully programmable coherence illuminator. Using such a system, resolution enhancing illuminations achieving k1 factors of 0.25 can readily be attained. Given the MET numerical aperture of 0.3, this translates to an ultimate resolution capability of 12 nm. Using such methods, the SEMATECH Berkeley MET has demonstrated resolution in resist to 16-nm half pitch and below in an imageable spin-on hard mask. At a half pitch of 16 nm, this material achieves a line-edge roughness of 2 nm with a correlation length of 6 nm. These new results demonstrate that the observed stall in ultimate resolution progress in chemically amplified resists is a materials issue rather than a tool limitation. With a resolution limit of 20-22 nm, the CAR champion from 2008 remains as the highest performing CAR tested to date. To enable continued advanced learning in EUV resists, SEMATECH has initiated a plan to implement a 0.5 NA microfield tool at the Advanced Light Source synchrotron facility. This tool will be capable of printing down to 8-nm half pitch.

  3. RET masks for the final frontier of optical lithography

    NASA Astrophysics Data System (ADS)

    Chen, J. F.; van den Broeke, Douglas; Hsu, Stephen; Hsu, Michael C. W.; Laidig, Tom; Shi, Xuelong; Chen, Ting; Socha, Robert J.; Hollerbach, Uwe; Wampler, Kurt E.; Park, Jungchul; Park, Sangbong; Gronlund, Keith

    2005-06-01

    With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today"s advanced lithography for DRAM/Flash is operating at k1 close to 0.3. The manufacturing for leading edge logic devices does not follow too far behind. Patterning at near theoretical lithography imaging limit (k1=0.25) even with hyper NA optics, the attainable aerial image contrast is marginal at best for the critical feature. Thus, one of the key objectives for low k1 lithography is to ensure the printing performance of critical features for manufacturing. Resolution enhancement technology (RET) mask in combination with hyper NA and illumination optimization is one primary candidate to enable lithography manufacturing at very low k1 factor. The use of rule-based Scattering Bars (SB) for all types of phase-shifting masks has become the de facto OPC standard since 180nm node. Model-based SB OPC method derives from interference mapping lithography (IML) has shown impressive printing result for both clear (gate) and dark field (contact and via) mask types. There are four basic types of RET mask candidates for 65nm node, namely, alternating phase-shifting mask (altPSM), attenuated PSM (attPSM), chromeless phase lithography (CPL) PSM, and double dipole lithography (DDL) using binary chrome mask. The wafer printing performances from CPL and DDL have proven both are strong candidates for 45nm nodes. One concern for using RET masks to target 45 nm nodes is likely to be the scaling for SB dimension for 4X mask. To assist imaging effectively with high NA, SB cannot be too small in width. However, for SB to be larger than sub-resolution, they can easily cause unwanted SB printing. The other major concern is the unwanted side lobe printing. This may occur for semi-dense pitch ranges under high NA and strong off-axis-illumination (OAI). Looking ahead

  4. Method for mask repair using defect compensation

    DOEpatents

    Sweeney, Donald W.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

  5. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  6. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  7. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  8. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  9. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  10. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... operating in the frequency bands governed under this part. Applicable Emission Masks Frequency band(MHz) Mask for equipment with Audio low passfilter Mask for equipment without audio low pass filter Below 25... the output power (P in watts) of the transmitter as follows: (1) On any frequency removed from...

  11. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... operating under this part. Applicable Emission Masks Frequency band (MHz) Mask for equipmentwith audio low pass filter Mask for equipmentwithout audio low pass filter Below 25 1 A or B A or C 25-50 B C 72-76 B... watts) of the transmitter as follows: (1) On any frequency removed from the assigned frequency by...

  12. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... operating in the frequency bands governed under this part. Applicable Emission Masks Frequency band(MHz) Mask for equipment with Audio low passfilter Mask for equipment without audio low pass filter Below 25... the output power (P in watts) of the transmitter as follows: (1) On any frequency removed from...

  13. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... operating under this part. Applicable Emission Masks Frequency band (MHz) Mask for equipmentwith audio low pass filter Mask for equipmentwithout audio low pass filter Below 25 1 A or B A or C 25-50 B C 72-76 B... watts) of the transmitter as follows: (1) On any frequency removed from the assigned frequency by...

  14. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  15. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  16. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  17. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  18. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  19. Masks: Escape to/from Reality.

    ERIC Educational Resources Information Center

    Kavett, Hyman

    1981-01-01

    Explains the significance of masks in ethnographic and cultural research and suggests 24 activities intended for use by social studies classroom teachers as they teach about masks. Activities include projecting slides onto students' bodies and faces, directing students to create masks from old clothing and rags, cutting faces from magazines, and…

  20. Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

    ERIC Educational Resources Information Center

    Hirose, Nobuyuki; Osaka, Naoyuki

    2009-01-01

    A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

  1. Emerging nondestructive inspection methods for aging aircraft

    SciTech Connect

    Beattie, A; Dahlke, L; Gieske, J

    1994-01-01

    This report identifies and describes emerging nondestructive inspection (NDI) methods that can potentially be used to inspect commercial transport and commuter aircraft for structural damage. The nine categories of emerging NDI techniques are: acoustic emission, x-ray computed tomography, backscatter radiation, reverse geometry x-ray, advanced electromagnetics, including magnetooptic imaging and advanced eddy current techniques, coherent optics, advanced ultrasonics, advanced visual, and infrared thermography. The physical principles, generalized performance characteristics, and typical applications associated with each method are described. In addition, aircraft inspection applications are discussed along with the associated technical considerations. Finally, the status of each technique is presented, with a discussion on when it may be available for use in actual aircraft maintenance programs. It should be noted that this is a companion document to DOT/FAA/CT-91/5, Current Nondestructive Inspection Methods for Aging Aircraft.

  2. Performance of GFIS mask repair system for various mask materials

    NASA Astrophysics Data System (ADS)

    Aramaki, Fumio; Kozakai, Tomokazu; Matsuda, Osamu; Yasaka, Anto; Yoshikawa, Shingo; Kanno, Koichi; Miyashita, Hiroyuki; Hayashi, Naoya

    2014-10-01

    We have developed a new focused ion beam (FIB) technology using a gas field ion source (GFIS) for mask repair. Meanwhile, since current high-end photomasks do not have high durability in exposure nor cleaning, some new photomask materials are proposed. In 2012, we reported that our GFIS system had repaired a representative new material "A6L2". It is currently expected to extend the application range of GFIS technology for various new materials and various defect shapes. In this study, we repaired a single bridge, a triple bridge and a missing hole on a phase shift mask (PSM) of "A6L2", and also repaired single bridges on a binary mask of molybdenum silicide (MoSi) material "W4G" and a PSM of high transmittance material "SDC1". The etching selectivity between those new materials and quartz were over 4:1. There were no significant differences of pattern shapes on scanning electron microscopy (SEM) images between repair and non-repair regions. All the critical dimensions (CD) at repair regions were less than +/-3% of those at normal ones on an aerial image metrology system (AIMS). Those results demonstrated that GFIS technology is a reliable solution of repairing new material photomasks that are candidates for 1X nm generation.

  3. Performance of actinic EUVL mask imaging using a zoneplatemicroscope

    SciTech Connect

    Goldberg, Kenneth A.; Naulleau, Patrick P.; Barty, Anton; Rekawa,Senajith B.; Kemp, Charles D.; Gunion, Robert F.; Salmassi, Farhad; Gullikson, Eric M.; Anderson, Erik H.; Han, Hak-Seung

    2007-08-20

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with {sigma} below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

  4. Performance of actinic EUVL mask imaging using a zoneplate microscope

    SciTech Connect

    Goldberg, K; Naulleau, P; Barty, A; Rekawa, S; Kemp, C; Gunion, R; Salmassi, F; Gullikson, E; Anderson, E; Han, H

    2007-09-25

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with {sigma} below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

  5. Aperture masking behind AO systems

    NASA Astrophysics Data System (ADS)

    Ireland, Michael J.

    2012-07-01

    Sparse Aperture-Mask Interferometry (SAM or NRM) behind Adaptive Optics (AO) has now come of age, with more than a dozen astronomy papers published from several 5-10m class telescopes around the world. I will describe the reasons behind its success in achieving relatively high contrasts ( 1000:1 at lambda/ D) and repeatable binary astronomy at the diffraction limit, even when used behind laser-guide star adaptive optics. Placed within the context of AO calibration, the information in an image can be split into pupil-plane phase, Fourier amplitude and closure-phase. It is the closure-phase observable, or its generalisation to Kernel phase, that is immune to pupil-plane phase errors at first and second-order and has been the reason for the technique's success. I will outline the limitations of the technique and the prospects for aperture-masking and related techniques in the future.

  6. Improving vision by pupil masking.

    PubMed

    Bonaque-González, Sergio; Ríos-Rodríguez, Susana; López-Gil, Norberto

    2016-07-01

    We propose an alternative solution to improve visual quality by spatially modulating the amplitude of light passing into the eye (related to the eye's transmittance), in contrast to traditional correction of the wavefront phase (related to the local refractive power). Numerical simulations show that masking the aberrated areas at the pupil plane should enhance visual function, especially in highly aberrated eyes. This correction could be implemented in practice using customized contact or intraocular lenses. PMID:27446688

  7. Improving vision by pupil masking

    PubMed Central

    Bonaque-González, Sergio; Ríos-Rodríguez, Susana; López-Gil, Norberto

    2016-01-01

    We propose an alternative solution to improve visual quality by spatially modulating the amplitude of light passing into the eye (related to the eye's transmittance), in contrast to traditional correction of the wavefront phase (related to the local refractive power). Numerical simulations show that masking the aberrated areas at the pupil plane should enhance visual function, especially in highly aberrated eyes. This correction could be implemented in practice using customized contact or intraocular lenses. PMID:27446688

  8. Mask CD uniformity improvement by electron scanning exposure based Global Loading Effect Correction

    NASA Astrophysics Data System (ADS)

    Li, Rivan; Tian, Eric; Shi, Irene; Guo, Eric; Lu, Max

    2015-07-01

    Critical Dimension (CD) Uniformity is one of the necessary parameters to assure good performance and reliable functionality of any integrated circuit (IC), and towards the advanced technology node 28nm and beyond, corresponding CD Uniformity becomes more and more crucial. It is found that bad mask CD Uniformity is a significant error source at 28nm process. The CD Uniformity on mask, if not controlled well, will badly impact wafer CD performance, and it has been well-studied that CD Uniformity issue from gate line-width in transistors would affect the device performance directly. In this paper we present a novel solution for mask global CD uniformity error correction, which is called as global loading effect correction (GLEC) method and applied nesting in the mask exposure map during the electron beam exposure. There are factors such as global chip layout, writing sequence and chip pattern density distribution (Global Loading), that work on the whole mask CD Uniformity, especially Global Loading is the key factor related to mask global CD error. From our experimental results, different pattern density distribution on mask significantly influenced the final mask CD Uniformity: the mask with undulating pattern density distribution provides much worse CD Uniformity than that with uniform one. Therefore, a GLEC model based on pattern density has been created to compensate the global error during the electron beam exposure, which has been proved to be efficacious to improve mask global CD Uniformity performance. Furthermore, it 's also revealed that pattern type is another important impact factor, and GLEC coefficient need be modified due to the specific pattern type (e.g. dense line-space only, iso-space only or an average of them) to improve the corresponding mask CD uniformity.

  9. Spin-on-carbon hard masks utilising fullerene derivatives

    NASA Astrophysics Data System (ADS)

    Brown, Alan G.; Frommhold, Andreas; Lada, Tom; Bowen, J.; el Otell, Z.; Robinson, Alex P. G.

    2016-03-01

    We have developed a range of fullerene containing materials for use as organic hard masks. Recent advances in material development are reported together with some results from external evaluations of the original HM100 series. Initial results for the new HM340-383-010 formulation show it to have a high thermal stability (~5.5 % mass loss at 400°C) and a very high carbon content (at 95.3%), offering high etch durability.

  10. Cortical correlate of pattern backward masking.

    PubMed Central

    Kovács, G; Vogels, R; Orban, G A

    1995-01-01

    The perception of a briefly presented shape is strongly impaired when it is followed by another pattern, a phenomenon called backward masking. We found that the vast majority of a sample of shape-selective neurons in the macaque inferior temporal cortex respond selectively to backward-masked shapes, although these shapes could not be discriminated by human and monkey subjects. However, this selective response was brief, since it was either interrupted by the mask or overridden by a response to the mask itself. We show that reliable discrimination of briefly presented shapes by single neurons depends on the temporal integration of the response. Presentation of the mask, however, reduces the number of spikes available for integration, explaining backward masking. These results also provide direct neurophysiological evidence for the "interruption theory" of backward masking. PMID:7777553

  11. History and future of mask making

    NASA Astrophysics Data System (ADS)

    Levy, Ken L.

    1996-12-01

    The history of the mask industry has three main periods, which I call the Classical Period, the Dark Ages, and the Renaissance, by analogy with those periods in the history of Western Europe. During the Classical Period, people developed 1X masks and the technology to make them. In the Dark Ages, people exploited the equipment developed during the Classical Period to make 5X reduction reticle, ending the nobility of mask making. In today's Renaissance of mask making, a proliferation of mask types is requiring a rebirth of innovation and creativity. The Renaissance resembles the Classical Period: masks are once again strategic, and technological capability is once again the driver. Meanwhile, the mask industry is carrying forward the productivity and efficiency gains it achieved during the Dark Ages. We must create a new business and economic model to support these changes in the characteristics of the marketplace.

  12. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... as follows: (1) Front-mounted or back-mounted gas mask. A gas mask which consists of a full facepiece.... (2) Chin-style gas mask. A gas mask which consists of a full facepiece, a canister which is usually attached to the facepiece, and associated connections. (3) Escape gas mask. A gas mask designed for...

  13. Actinic imaging of native and programmed defects on a full-field mask

    SciTech Connect

    Mochi, I.; Goldberg, K. A.; Fontaine, B. La; Tchikoulaeva, A.; Holfeld, C.

    2010-03-12

    We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and composition of these defects, whether they appear on the top surface, within the multilayer coating, or on the substrate as buried bumps or pits, influences both their significance when printed, and their detectability with the available techniques. Actinic inspection quantitatively predicts the characteristics of printed defect images in ways that may not be possible with non-EUV techniques. As a quantitative example, we investigate the main structural characteristics of a buried pit defect based on EUV through-focus imaging.

  14. Reflective Occultation Mask for Evaluation of Occulter Designs for Planet Finding

    NASA Technical Reports Server (NTRS)

    Hagopian, John; Lyon, Richard; Shiri, Shahram; Roman, Patrick

    2011-01-01

    Advanced formation flying occulter designs utilize a large occulter mask flying in formation with an imaging telescope to block and null starlight to allow imaging of faint planets in exosolar systems. A paper describes the utilization of subscale reflective occultation masks to evaluate formation flying occulter designs. The use of a reflective mask allows mounting of the occulter by conventional means and simplifies the test configuration. The innovation alters the test set-up to allow mounting of the mask using standard techniques to eliminate the problems associated with a standard configuration. The modified configuration uses a reflective set-up whereby the star simulator reflects off of a reflective occulting mask and into an evaluation telescope. Since the mask is sized to capture all rays required for the imaging test, it can be mounted directly to a supporting fixture without interfering with the beam. Functionally, the reflective occultation mask reflects light from the star simulator instead of transmitting it, with a highly absorptive carbon nanotube layer simulating the occulter blocking mask. A subscale telescope images the star source and companion dim source that represents a planet. The primary advantage of this is that the occulter can be mounted conventionally instead of using diffractive wires or magnetic levitation.

  15. Comparative Study of Manufacturing Techniques for Coronagraphic Binary Pupil Masks: Masks on Substrates and Free-Standing Masks

    NASA Astrophysics Data System (ADS)

    Enya, Keigo; Haze, Kanae; Kotani, Takayuki; Abe, Lyu

    2012-12-01

    We present a comparative study of the manufacture of binary pupil masks for coronagraphic observations of exoplanets. A checkerboard mask design, a type of binary pupil mask design, was adopted, and identical patterns of the same size were used for all masks in order that we could compare the differences resulting from the different manufacturing methods. The masks on substrates had aluminum checkerboard patterns with thicknesses of 0.1/0.2/0.4/0.8/1.6μm, constructed on substrates of BK7 glass, silicon, and germanium using photolithography and chemical processes. Free-standing masks made of copper and nickel with thicknesses of 2/5/10/20μm were also realized using photolithography and chemical processes, which included careful release from the substrate used as an intermediate step in the manufacture. Coronagraphic experiments using a visible laser were carried out for all masks on BK7 glass substrate and the free-standing masks. The average contrasts were 8.4 × 10-8, 1.2 × 10-7, and 1.2 × 10-7 for the masks on BK7 substrates, the free-standing copper masks, and the free-standing nickel masks, respectively. No significant correlation was concluded between the contrast and the mask properties. The high-contrast masks have the potential to cover the needs of coronagraphs for both ground-based and space-borne telescopes over a wide wavelength range. Especially, their application to the infrared space telescope, SPICA, is appropriate.

  16. A Robot Based Automatic Paint Inspection System

    NASA Astrophysics Data System (ADS)

    Atkinson, R. M.; Claridge, J. F.

    1988-06-01

    The final inspection of manufactured goods is a labour intensive activity. The use of human inspectors has a number of potential disadvantages; it can be expensive, the inspection standard applied is subjective and the inspection process can be slow compared with the production process. The use of automatic optical and electronic systems to perform the inspection task is now a growing practice but, in general, such systems have been applied to small components which are accurately presented. Recent advances in vision systems and robot control technology have made possible the installation of an automated paint inspection system at the Austin Rover Group's plant at Cowley, Oxford. The automatic inspection of painted car bodies is a particularly difficult problem, but one which has major benefits. The pass line of the car bodies is ill-determined, the surface to be inspected is of varying surface geometry and only a short time is available to inspect a large surface area. The benefits, however, are due to the consistent standard of inspection which should lead to lower levels of customer complaints and improved process feedback. The Austin Rover Group initiated the development of a system to fulfil this requirement. Three companies collaborated on the project; Austin Rover itself undertook the production line modifications required for body presentation, Sira Ltd developed the inspection cameras and signal processing system and Unimation (Europe) Ltd designed, supplied and programmed the robot system. Sira's development was supported by a grant from the Department of Trade and Industry.

  17. Evaluating Texture Compression Masking Effects Using Objective Image Quality Assessment Metrics.

    PubMed

    Griffin, Wesley; Olano, Marc

    2015-08-01

    Texture compression is widely used in real-time rendering to reduce storage and bandwidth requirements. Recent research in compression algorithms has explored both reduced fixed bit rate and variable bit rate algorithms. The results are evaluated at the individual texture level using mean square error, peak signal-to-noise ratio, or visual image inspection. We argue this is the wrong evaluation approach. Compression artifacts in individual textures are likely visually masked in final rendered images and this masking is not accounted for when evaluating individual textures. This masking comes from both geometric mapping of textures onto models and the effects of combining different textures on the same model such as diffuse, gloss, and bump maps. We evaluate final rendered images using rigorous perceptual error metrics. Our method samples the space of viewpoints in a scene, renders the scene from each viewpoint using variations of compressed textures, and then compares each to a ground truth using uncompressed textures from the same viewpoint. We show that masking has a significant effect on final rendered image quality, masking effects and perceptual sensitivity to masking varies by the type of texture, graphics hardware compression algorithms are too conservative, and reduced bit rates are possible while maintaining final rendered image quality. PMID:26357259

  18. Assessment and comparison of different approaches for mask write time reduction

    NASA Astrophysics Data System (ADS)

    Elayat, A.; Lin, T.; Sahouria, E.; Schulze, S. F.

    2011-11-01

    The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and subsequently longer mask writing times. We review the data preparation steps post tapeout, how they influence shot count as the main driver for mask writing time and techniques to reduce that impact. The paper discusses the application of resolution enhancements and layout simplification techniques; the fracture step and optimization methods; mask writing and novel ideas for shot count reduction. The paper will describe and compare the following techniques: optimized fracture, pre-fracture jog alignment, generalization of shot definition (L-shot), multi-resolution writing, optimized-based fracture, and optimized OPC output. The comparison of shot count reduction techniques will consider the impact of changes to the current state of the art using the following criteria: computational effort, CD control on the mask, mask rule compliance for manufacturing and inspection, and the software and hardware changes required to achieve the mask write time reduction. The paper will introduce the concepts and present some data preparation results based on process correction and fracturing tools.

  19. 12 CFR 1024.10 - One-day advance inspection of HUD-1 or HUD-1A settlement statement; delivery; recordkeeping.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... FINANCIAL PROTECTION REAL ESTATE SETTLEMENT PROCEDURES ACT (REGULATION X) § 1024.10 One-day advance... of the loan file. Such owner or servicer shall retain the HUD-1 or HUD-1A for the remainder of...

  20. 12 CFR 1024.10 - One-day advance inspection of HUD-1 or HUD-1A settlement statement; delivery; recordkeeping.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... FINANCIAL PROTECTION REAL ESTATE SETTLEMENT PROCEDURES ACT (REGULATION X) § 1024.10 One-day advance... of the loan file. Such owner or servicer shall retain the HUD-1 or HUD-1A for the remainder of...

  1. High performance mask fabrication process for the next-generation mask production

    NASA Astrophysics Data System (ADS)

    Yagawa, Keisuke; Ugajin, Kunihiro; Suenaga, Machiko; Kobayashi, Yoshihito; Motokawa, Takeharu; Hagihara, Kazuki; Saito, Masato; Itoh, Masamitsu

    2014-07-01

    ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lithography (NGL) solutions. Moreover, with change in lithography tool, next generation mask production will be needed. According to ITRS 2013, fabrication of finer patterns less than 15nm will be required on mask plate in NGL mask production 5 years later [1]. In order to fabricate finer patterns on mask, higher resolution EB mask writer and high performance fabrication process will be required. In a previous study, we investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist [2][3]. After a further investigation, we constructed higher performance mask process by using new EB mask writer EBM9000. EBM9000 is the equipment supporting hp16nm generation's photomask production and has high accuracy and high throughput. As a result, we achieved 15.5nm pattern on mask with high productivity. Moreover, from evaluation of isolated pattern, we proved that current mask process has the capability for sub-10nm pattern. These results show that the performance of current mask fabrication process have the potential to fabricate the next-generation mask.

  2. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  3. A model of visual backward masking.

    PubMed

    Bugmann, Guido; Taylor, John G

    2005-01-01

    When two successive stimuli are presented within 0-200 ms intervals, the recognition of the first stimulus (the target) can be impaired by the second (the mask). This backward masking phenomenon has a form called metacontrast masking where the target and the mask are in close spatial proximity but not overlapping. In that case, the masking effect is strongest for interval of 60-100 ms. To understand this behaviour, activity propagation in a feedforward network of leaky integrate and fire neurons is investigated. It is found that, if neurons have a selectivity similar to that of V1 simple cells, activity decays layer after layer and ceases to propagate. To combat this, a local amplification mechanism is included in the model, using excitatory lateral connections, which turn out to support prolonged self-sustained activity. Masking is assumed to arise from local competition between representations recruited by the target and the mask. This tends to interrupt sustained firing, while prolonged retinal input tends to re-initiate it. Thus, masking causes a maximal reduction of the duration of the cortical response to the target towards the end of the retinal response. This duration exhibits the typical U-shape of the masking curve. In this model, masking does not alter the propagation of the onset of the response to the target, thus preserving response reaction times and enabling unconscious priming phenomena. PMID:15649600

  4. Mask data volume: explosion or damp squib?

    NASA Astrophysics Data System (ADS)

    Spence, Chris; Goad, Scott; Buck, Peter; Gladhill, Richard; Cinque, Russell

    2005-11-01

    Mask data file sizes are increasing as we move from technology generation to generation. The historical 30% linear shrink every 2-3 years that has been called Moore's Law, has driven a doubling of the transistor budget and hence feature count. The transition from steppers to step-and-scan tools has increased the area of the mask that needs to be patterned. At the 130nm node and below, Optical Proximity Correction (OPC) has become prevalent, and the edge fragmentation required to implement OPC leads to an increase in the number of polygons required to define the layout. Furthermore, Resolution Enhancement Techniques (RETs) such as Sub-Resolution Assist Features (SRAFs) or tri-tone Phase Shift Masks (PSM) require additional features to be defined on the mask which do not resolve on the wafer, further increasing masks volumes. In this paper we review historical data on mask file sizes for microprocessor designs. We consider the consequences of this increase in file size on Mask Data Prep (MDP) activities, both within the Integrated Device Manufacturer (IDM) and Mask Shop, namely: computer resources, storage and networks (for file transfer). The impact of larger file sizes on mask writing times is also reviewed. Finally we consider, based on the trends that have been observed over the last 5 technology nodes, what will be required to maintain reasonable MDP and mask manufacturing cycle times.

  5. Resist On Quartz Inspection In A Manufacturing Environment

    NASA Astrophysics Data System (ADS)

    Tang, Gernia; Kim, Gabe I.; van Nice, Gary V.

    1989-07-01

    An effective repeating defect detection program is essential for a successful stepper-based photolithography process. Repeating defects caused by problems with the reticle or stepper optics have a direct and dramatic impact on wafer yield. As die sizes increase and the number of die per field decrease, the importance of this inspection program increases to a critical level in manufacturing. To protect against yield-impacting repeating defects, a variety of automated inspection strategies have been implemented in lithography processes, including particle inspection of the reticle, metal on glass wafer inspection, and single layer resist on silicon inspection. Each of these techniques have limitations in the manufacturing area. A new technology, resist on quartz inspection, has recently emerged for the detection of repeating defects in high volume wafer fabrication. Production reticles are stepped onto resist-coated, transparent quartz wafers. After development, a repeating defect inspection can be automatically performed using transmitted light which provides optimum defect detection sensitivity and throughput. This novel technique uses standard wafer fabrication processes to produce the resist images. This paper discusses the implementation of resist on quartz inspection in a manufacturing environment. Focus/exposure matrices were run to determine the process window for generating resist images on quartz substrates and to confirm inspection performance on typical production resist images. The resist on quartz inspection strategy implemented in the production area is explained. Examples of repeating defects detected by the inspection program are shown. To confirm the capability of processing quartz wafers with an existing production lithography process, a 5X VeriMaskTm 1045 test reticle was used to generate resist images. The reticle has programmed defects of varying sizes, types and locations on one micron geometries. Test images were created with various exposure

  6. Inspection and Emotion

    ERIC Educational Resources Information Center

    Perryman, Jane

    2007-01-01

    In this paper I explore the emotional impact of inspection on the staff of a school in the two years between Ofsted inspections. Using data from one school undergoing inspection, I argue that the negative emotional impact of inspection of teachers goes beyond the oft-reported issues of stress and overwork. Teachers experience a loss of power and…

  7. EUV mask cleans comparison of frontside and dual-sided concurrent cleaning

    NASA Astrophysics Data System (ADS)

    Cheong, Lin Lee; Kindt, Louis; Turley, Christina; Leonhard, Dusty; Boyle, John; Robinson, Chris; Rankin, Jed; Corliss, Daniel

    2015-03-01

    The cleaning requirements for EUV masks are more complex than optical masks due to the absence of available EUVcompatible pellicles. EUV masks must therefore be capable of undergoing more than 100 cleaning cycles with minimum impact to lithographic performance. EUV masks are created on substrates with 40 multilayers of silicon and molybdenum to form a Bragg reflector, capped with a 2.5nm-thick ruthenium layer and a tantalum-based absorber; during usage, both ruthenium and absorber are exposed to the cleaning process. The CrN layer on the backside is used to enable electrostatic clamping. This clamp side must also be free of particles that could impact printing and overlay, and particles could also potentially migrate to the frontside and create defects. Thus, the cleaning process must provide decent particle removal efficiencies on both front- and backside while maintaining reflectivity with minimal surface roughness change. In this paper, we report progress developing a concurrent patterned-side and clamped-side cleaning process that achieves minimal reflectivity change over 120 cleaning cycles, with XPS and EDS indicating the presence of ruthenium after 125 cleaning cycles. The change in surface roughness over 100 cleaning cycles is within the noise (0.0086nm) on a mask blank, and SEM inspection of 100nm and 200nm features on patterned masks after undergoing 100 cleaning cycles show no indications of ruthenium pitting or significant surface damage. This process was used on test masks to remove particles from both sides that would otherwise inhibit these masks from being used in the scanner.

  8. Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks

    SciTech Connect

    Jeong, Seongtae; Johnson, Lewis; Rekawa, Seno; Walton, Chris C.; Prisbrey, Shon T.; Tejnil, Edita; Underwood, James H.; Bokor, Jeffrey; EECS Department, University of California, Berkeley, California 94720

    1999-11-01

    We present recent experimental results from a prototype actinic (operates at the 13 nm extreme ultraviolet wavelength) defect inspection system for extreme ultraviolet lithography mask blanks. The defect sensitivity of the current actinic inspection system is shown to reach 100 nm in experiments with programmed defects. A method to cross register and cross correlate between the actinic inspection system and a commercial visible-light scattering defect inspection system is also demonstrated. Thus, random, native defects identified using the visible-light tool can reliably be found and scanned by our actinic tool. We found that native defects as small as 86 nm (as classified by the visible-light tool) were detectable by the actinic tool. These results demonstrate the capability of this tool for independent defect counting experiments. (c) 1999 American Vacuum Society.

  9. Polarization masks: concept and initial assessment

    NASA Astrophysics Data System (ADS)

    Lam, Michael; Neureuther, Andrew R.

    2002-07-01

    Polarization from photomasks can be used as a new lever to improve lithographic performance in both binary and phase-shifting masks (PSMs). While PSMs manipulate the phase of light to control the temporal addition of electric field vectors, polarization masks manipulate the vector direction of electric field vectors to control the spatial addition of electric field components. This paper explores the theoretical possibilities of polarization masks, showing that it is possible to use bar structures within openings on the mask itself to polarize incident radiation. Rigorous electromagnetic scattering simulations using TEMPEST and imaging with SPLAT are used to give an initial assessment on the functionality of polarization masks, discussing the polarization quality and throughputs achieved with the masks. Openings between 1/8 and 1/3 of a wavelength provide both a low polarization ratio and good transmission. A final overall throughput of 33% - 40% is achievable, corresponding to a dose hit of 2.5x - 3x.

  10. Polyurethane Masks Large Areas in Electroplating

    NASA Technical Reports Server (NTRS)

    Beasley, J. L.

    1985-01-01

    Polyurethane foam provides effective mask in electroplating of copper or nickel. Thin layer of Turco maskant painted on area to be masked: Layer ensures polyurethane foam removed easily after served its purpose. Component A, isocyanate, and component B, polyol, mixed together and brushed or sprayed on mask area. Mixture reacts, yielding polyurethane foam. Foam prevents deposition of nickel or copper on covered area. New method saves time, increases productivity and uses less material than older procedures.

  11. Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning

    NASA Astrophysics Data System (ADS)

    Lyons, Adam; Teki, Ranganath; Hartley, John

    2012-03-01

    The authors present a process for patterning Extreme Ultraviolet Lithography (EUVL) mask absorber metal using electron beam evaporation and bi-layer liftoff lithography. The Line Edge Roughness (LER) and Critical Dimension Uniformity (CDU) of patterned chrome absorber are determined for various chrome thicknesses on silicon substrates, and the viability of the method for use with nickel absorber and on EUVL masks is demonstrated. Scanning Electron Microscope (SEM) data is used with SuMMIT software to determine the absorber LER and CDU. The Lawrence Berkeley National Labs Actinic Inspection Tool (AIT) is used to verify the printability of the pattern down to 24nm half pitch. The effect of processing on the integrity of the mask multilayer is measured using an actinic reflectometer at the College of Nanoscale Science and Engineering.

  12. Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

    SciTech Connect

    Yan, Pei-Yang; Zhang, Guojing; Gullickson, Eric M.; Goldberg, Kenneth A.; Benk, Markus P.

    2015-03-01

    Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

  13. Actinic imaging and evaluation of phase structures on EUV lithography masks

    SciTech Connect

    Mochi, Iacopo; Goldberg, Kenneth; Huh, Sungmin

    2010-09-28

    The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of the object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.

  14. Actinic detection of multilayer defects on EUV mask blanks using LPP light source and dark-field imaging

    NASA Astrophysics Data System (ADS)

    Tezuka, Yoshihiro; Ito, Masaaki; Terasawa, Tsuneo; Tomie, Toshihisa

    2004-05-01

    The development of defect-free mask blanks including inspection is one of the big challenges for the implementation of extreme ultraviolet lithography (EUVL), especially when the introduction of EUVL is rescheduled to a later technology node. Among others, inspection of multilayer coated mask blanks with no oversight of critical defects and with minimal detection of false defects is a challenging issue for providing mask blanks free of defects or with thorough characterization of any existing defects. MIRAI Project has been developing a novel actinic (at-wavelength) inspection tool for detecting critical multilayer defects using a dark-field imaging and a laser-produced plasma (LPP) light source, expecting better sensitivity and better correlation with printability. The first experimental set up is completed for proof-of-concept (POC) demonstration using 20x Schwarzschild imaging optics and a backsideilluminated CCD. An in-house LPP light source is integrated to optimally illuminate the area of interest by EUV with a wavelength of 13.5nm. For its illuminator, a multilayer-coated elliptical mirror is used to illuminate a mask blank with the EUV that is collected within a wide solid angle from the light source. The first EUV dark-field image is obtained from a mask blank with programmed multilayer defects which are manufactured by locating well-defined patterns before depositing Mo/Si multilayer on EUV mask substrate. All the fabricated multilayer defects down to 70nm in width and 3.5nm in height are detected as clear signals that are distinguishable from the background intensity arising from the scattering by the surface roughness of the multilayer-coated mask blank. We have also detected a phase defect as low as 2nm in height. False defect count was not only zero within the area of view but also statistically confirmed to be less than one within the whole area of a mask blank assuming the extrapolation of observed fluctuation of background intensity is applicable

  15. Fast mask CD uniformity measurement using zero order diffraction from memory array pattern

    NASA Astrophysics Data System (ADS)

    Heo, Jinseok; Park, Jinhong; Yeo, Jeongho; Choi, Seongwoon; Han, Woosung

    2009-03-01

    CD Uniformity (CDU) control is getting more concerning in lithographic process and required to control tighter as design rule shrinkage. Traditionally CDU is measured through discrete spatial sampling based data and interpolated data map represents uniformity trends within shot and wafer. There is growing requirement on more high sampling resolution for the CDU mapping from wafer. However, it requires huge time consumption for CD measurements with traditional methods like CD-SEM and OCD. To overcome the throughput limitation, there was an approach with inspection tool to measure CD trends on array area which showed good correlation to the traditional CD measurement. In this paper, we suggest a fast mask CD error estimation method using 0th order of diffraction. To accomplish fast measurement, simple macro inspection tool was adopted to cover full wafer area and scan result gives good correlation with mask uniformity data.

  16. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  17. VIIRS Cloud Mask Validation Exercises

    NASA Astrophysics Data System (ADS)

    Frey, R.; Heidinger, A. K.; Hutchison, K.; Dutcher, S.

    2011-12-01

    The NPP Satellite is scheduled for launch October 25, 2011. Included on the platform is the VIIRS (Visible/Infrared Imager/Suite) instrument which features 16 bands at about 0.75 m spatial resolution and 5 imager bands at roughly 0.375 m resolution. The basic VIIRS cloud mask (VCM) output is a flag that indicates one of four possible cloudy vs. clear conditions for each 0.75 m pixel: confident clear, probably clear, probably cloudy, and confident cloudy. Pre-launch assessment of the VCM algorithm has been performed with use of MODIS observations as proxy input. Several comparisons are shown between VCM results and cloud detection from other instruments and/or algorithms: MODIS cloud mask (MOD35) at the five-minute granule level (L2), global and regional monthly average cloud amounts from MODIS (MOD35) and MODIS-CERES, ISCCP, PATMOS-x (AVHRR), and CALIOP (lidar). In addition to overall results, collocated MODIS observations, CALIOP and VCM cloud determinations are used to evaluate VCM cloud test thresholds and other tunable parameters. The methods shown will be among those used during the Intensive Calibration and Validation period and beyond.

  18. Evaluation of a native vegetation masking technique

    NASA Technical Reports Server (NTRS)

    Kinsler, M. C.

    1984-01-01

    A crop masking technique based on Ashburn's vegetative index (AVI) was used to evaluate native vegetation as an indicator of crop moisture condition. A mask of the range areas (native vegetation) was generated for each of thirteen Great Plains LANDSAT MSS sample segments. These masks were compared to the digitized ground truth and accuracies were computed. An analysis of the types of errors indicates a consistency in errors among the segments. The mask represents a simple quick-look technique for evaluating vegetative cover.

  19. Determination of mask induced polarization effects on AltPSM mask structures

    NASA Astrophysics Data System (ADS)

    Hollein, Ingo; Teuber, Silvio; Bubke, Karsten

    2005-06-01

    In the process of discussion of possible mask-types for the 5x nm node (half-pitch) and below, the alternating phase-shifting mask (AltPSM) is a potential candidate to be screened. The current scenario suggests using 193 nm immersion lithography with NA values of up to 1.2 and above. New optical effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate need to be taken into account when the optical performance of a mask is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures on a real mask. Measurements of the polarization dependent diffraction efficiencies have been performed on AltPSM masks. Experimental results show good agreement with simulations. A comparison with Binary Masks is made.

  20. A cluster randomised trial of cloth masks compared with medical masks in healthcare workers

    PubMed Central

    MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

    2015-01-01

    Objective The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. Setting 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. Participants 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Intervention Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Main outcome measure Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. Results The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. Conclusions This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Trial registration number Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. PMID

  1. Limitations of optical reticle inspection for 45-nm node and beyond

    NASA Astrophysics Data System (ADS)

    Teuber, S.; Bzdurek, A.; Dürr, A. C.; Heumann, J.; Holfeld, C.

    2006-10-01

    Pushing the limits of optical lithography by immersion technology requires ever smaller feature sizes on the reticle. At the same time the k1-factor will be shifted close to the theoretical limit, e.g. the OPC structures on the reticle become very aggressive. For the mask shop it is essential to manufacture defect free masks. The minimum defect size, which needs to be found reliably, becomes smaller with decreasing feature sizes. Consequently optical inspection of masks for the 45nm node and below will be challenging. In this paper the limits of existing KLA inspection tools were investigated by systematic inspection of different structures without and with programmed defects. A test mask with isolated and dense lines/space patterns including programmed defects was manufactured, completely characterized by CD-SEM and inspected with state-of-the-art inspection system. AIMS TM measurements were used to evaluate the defect printing behavior. The analysis of the measurement data gives an input for requirements of reticle inspection of upcoming 45nm node and beyond.

  2. Phase defect mitigation strategy: fiducial mark requirements on extreme ultraviolet lithography mask

    NASA Astrophysics Data System (ADS)

    Murachi, Tetsunori; Amano, Tsuyoshi; Oh, Sung Hyun

    2012-03-01

    For Extreme Ultra-Violet Lithography (EUVL), fabrication of defect free multi-layered (ML) mask blanks is one of the difficult challenges. ML defects come from substrate defects and adders during ML coating, cannot be removed, and are called as phase defect. If we can accept ML blanks with certain number of phase defects, the blank yield will be drastically up. In order to use such blanks, the phase defects need to be identified and located during ML blank defect inspection before absorber patterning. To locate phase defects on the blanks accurately and precisely, Fiducial Marks (FM) on ML blanks are needed for mask alignment and defect location information. The proposed requirement of defect location accuracy is <=20 nm [1]. In this paper, we will present the result of feasibility study on the requirements of FM on EUVL mask by simulations & experiments to establish the phase defect mitigation method with EUV Actinic Blank Inspection (ABI) tool. And the optimum ranges of FM line width, depth, and fabrication method on EUVL mask based on above results are >= 5 um line width, >= 100 nm depth FM etched into ML respectively, and additional finer FMs for magnified optics.

  3. Optimization of mask manufacturing rule check constraint for model based assist feature generation

    NASA Astrophysics Data System (ADS)

    Shim, Seongbo; Kim, Young-chang; Chun, Yong-jin; Lee, Seong-Woo; Lee, Suk-joo; Choi, Seong-woon; Han, Woo-sung; Chang, Seong-hoon; Yoon, Seok-chan; Kim, Hee-bom; Ki, Won-tai; Woo, Sang-gyun; Cho, Han-gu

    2008-11-01

    SRAF (sub-resolution assist feature) generation technology has been a popular resolution enhancement technique in photo-lithography past sub-65nm node. It helps to increase the process window, and these are some times called ILT(inverse lithography technology). Also, many studies have been presented on how to determine the best positions of SRAFs, and optimize its size. According to these reports, the generation of SRAF can be formulated as a constrained optimization problem. The constraints are the side lobe suppression and allowable minimum feature size or MRC (mask manufacturing rule check). As we know, bigger SRAF gives better contribution to main feature but susceptible to SRAF side lobe issue. Thus, we finally have no choice but to trade-off the advantages of the ideally optimized mask that contains very complicated SRAF patterns to the layout that has been MRC imposed applied to it. The above dilemma can be resolved by simultaneously using lower dose (high threshold) and cleaning up by smaller MRC. This solution makes the room between threshold (side lobe limitation) and MRC constraint (minimum feature limitation) wider. In order to use smaller MRC restriction without considering the mask writing and inspection issue, it is also appropriate to identify the exact mask writing limitation and find the smart mask constraints that well reflect the mask manufacturability and the e-beam lithography characteristics. In this article, we discuss two main topics on mask optimizations with SRAF. The first topic is on the experimental work to find what behavior of the mask writing ability is in term of several MRC parameters, and we propose more effective MRC constraint for aggressive generation of SRAF. The next topic is on finding the optimum MRC condition in practical case, 3X nm node DRAM contact layer. In fact, it is not easy to encompass the mask writing capability for very complicate real SRAF pattern by using the current MRC constraint based on the only width and

  4. Set Size and Mask Duration Do Not Interact in Object-Substitution Masking

    ERIC Educational Resources Information Center

    Argyropoulos, Ioannis; Gellatly, Angus; Pilling, Michael; Carter, Wakefield

    2013-01-01

    Object-substitution masking (OSM) occurs when a mask, such as four dots that surround a brief target item, onsets simultaneously with the target and offsets a short time after the target, rather than simultaneously with it. OSM is a reduction in accuracy of reporting the target with the temporally trailing mask, compared with the simultaneously…

  5. Determination of mask induced polarization effects occurring in hyper NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Teuber, Silvio; Bubke, Karsten; Hollein, Ingo; Ziebold, Ralf; Peters, Jan H.

    2005-05-01

    As the lithographic projection technology of the future will require higher numerical aperture (NA) values, new physical effects will have to be taken into consideration. Immersion lithography will result in NA values of up to 1.2 and above. New optical effects like 3D shadowing, effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate should be considered when the masks optical performance is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures of standard production masks. On a binary and on an attenuated phase-shifting mask, which were manufactured at the Advanced Mask Technology Center (AMTC) transmission experimental investigations were performed. Measurements of diffraction efficiencies for TE- and TM-polarized light using three different incident angles are presented for all considered mask types and compared to simulations. The structures under investigation include line-space-pattern with varying pitches as well as varying duty cycles. Experimental results show good agreement with simulations.

  6. Fast mask writers: technology options and considerations

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

    2011-04-01

    The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

  7. Shadows Alter Facial Expressions of Noh Masks

    PubMed Central

    Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

    2013-01-01

    Background A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers’ recognition of the emotional expressions. Methodology/Principal Findings In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Conclusions/Significance Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa’s smile. They also agree with the aesthetic principle of Japanese traditional art “yugen (profound grace and subtlety)”, which highly appreciates subtle emotional expressions in the darkness. PMID:23940748

  8. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  9. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 42 Public Health 1 2011-10-01 2011-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  10. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  11. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 1 2014-10-01 2014-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  12. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  13. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas masks; description. 84.110 Section 84.110... HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.110 Gas masks; description. (a) Gas masks including all completely assembled air purifying masks designed...

  14. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas masks; description. 84.110 Section 84.110... HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.110 Gas masks; description. (a) Gas masks including all completely assembled air purifying masks designed...

  15. Improving the performance of the actinic inspection tool with an optimized alignment procedure

    SciTech Connect

    Mochi, I.; Goldberg, K.A.; Naulleau, P.; Huh, Sungmin

    2009-03-04

    Extreme ultraviolet (EUV) microscopy is an important tool for the investigation of the performance of EUV masks, for detecting the presence and the characteristics of defects, and for evaluating the effectiveness of defect repair techniques. Aerial image measurement bypasses the difficulties inherent to photoresist imaging and enables high data collection speed and flexibility. It provides reliable and quick feedback for the development of masks and lithography system modeling methods. We operate the SEMATECH Berkeley Actinic Inspection Tool (AIT), a EUV microscope installed at the Advanced Light Source at Lawrence Berkeley National Laboratory. The AIT is equipped with several high-magnification Fresnel zoneplate lenses, with various numerical aperture values, that enable it image the reflective mask surface with various resolution and magnification settings. Although the AIT has undergone significant recent improvements in terms of imaging resolution and illumination uniformity, there is still room for improvement. In the AIT, an off-axis zoneplate lens collects the light coming from the sample and an image of the sample is projected onto an EUV-sensitive CCD camera. The simplicity of the optical system is particularly helpful considering that the AIT alignment has to be performed every time that a sample or a zoneplate is replaced. The alignment is sensitive to several parameters such as the lens position and orientation, the illumination direction and the sample characteristics. Since the AIT works in high vacuum, there is no direct access to the optics or to the sample during the alignment and the measurements. For all these reasons the alignment procedures and feedback can be complex, and in some cases can reduce the overall data throughput of the system. In this paper we review the main strategies and procedures that have been developed for quick and reliable alignments, and we describe the performance improvements we have achieved, in terms of aberration

  16. 130-nm reticle inspection using multibeam UV-wavelength database inspection

    NASA Astrophysics Data System (ADS)

    Aquino, Christopher M.; Schlaffer, Robert

    2002-07-01

    The TeraStar family of reticle inspection systems were introduced in 2000 with die-to-die and STARlightT capability. These tools set the standard for high-resolution reticle inspection for the 130 nm design rule and below. The latest addition to the TeraStar family is the TeraStar SLF77, which extends the tool platform to include die-to-database inspection capability. Sensitivity for Chrome on Glass is 100 nm with much greater tolerance for inspecting aggressive OPC features such as serifs and assist lines. Many advanced reticles that are not inspectable on previous generation inspection tools are all inspectable on the TeraStar SLF77. Data prep times and file structure have been significantly improved with the average prep time being less than 10 percent of the 365UV-HR and average output file size less than 25 percent of the GigaPrep. The TeraStar SLF77 incorporates all the features of the TeraStar family such as triple-beam optics and TeraPro HP High Productivity Modes with the ability to run STARlight inspections concurrently with either die-to-die or die-to-database pattern inspections. Advanced registration algorithms accommodate subtle plate and machine errors to provide high sensitivity with low false detections. Advanced image overlay inspects small lines and OPC features and is very independent of defect shape and location. The TeraStar SLF77 has removed the barriers that existed with previous generation database inspection tools and made advanced reticle die-to-database inspection cost effective. Last October, KLA-Tencor introduced the TeraStar SLF77 and the three beta sites have recently completed beta evaluation. Here we present the first results from the use of the TeraStar in a production environment triple beam die-to-database inspection system. We have also shipped more than ten systems to customers worldwide. This paper describes the implementation of productivity improvements at the beta sites, performance on 130nm node customer product reticles

  17. Implicit Semantic Perception in Object Substitution Masking

    ERIC Educational Resources Information Center

    Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

    2011-01-01

    Decades of research on visual perception has uncovered many phenomena, such as binocular rivalry, backward masking, and the attentional blink, that reflect "failures of consciousness". Although stimuli do not reach awareness in these paradigms, there is evidence that they nevertheless undergo semantic processing. Object substitution masking (OSM),…

  18. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Emission masks. 90.210 Section 90.210 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES General Technical Standards § 90.210 Emission masks. Except as indicated elsewhere in this part, transmitters used in...

  19. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  20. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  1. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  2. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  3. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  4. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  5. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  6. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  7. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  8. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  9. GEWEX-RFA Land-Ocean Mask

    Atmospheric Science Data Center

    2016-05-20

    GEWEX RFA Land-Ocean Mask A 2.5° resolution land-ocean mask has been developed for the Radiative Flux Assessment. It can be used ... creating global, regional, or zonal time series for land or ocean. Format - Pixels are arranged as in global map standard . ...

  10. A facial mask comprising Dead Sea mud.

    PubMed

    Abu-Jdayil, Basim; Mohameed, Hazim A

    2006-01-01

    Many investigators have proved that Dead Sea salt and mud are useful in treating skin disorders and skin diseases. Therefore, the black mud has been extensively used as a base for the preparation of soaps, creams, and unguents for skin care. This study concerns a facial mask made mainly of Dead Sea mud. The effects of temperature and shearing conditions on the rheological behavior of the facial mask were investigated. The mud facial mask exhibited a shear thinning behavior with a yield stress. It was found that the apparent viscosity of the mask has a strong dependence on the shear rate as well as on the temperature. The facial mask exhibited a maximum yield stress and very shear thinning behavior at 40 degrees C, which is attributed to the gelatinization of the polysaccharide used to stabilize the mud particles. On the other hand, the mud mask exhibited a time-independent behavior at low temperatures and shear rates and changed to a thixotropic behavior upon increasing both the temperature and the shear rate. The shear thinning and thixotropic behaviors have a significant importance in the ability of the facial mask to spread on the skin: the Dead Sea mud mask can break down for easy spreading, and the applied film can gain viscosity instantaneously to resist running. Moreover, particle sedimentation, which in this case would negatively affect consumer acceptance of the product, occurs slowly due to high viscosity at rest conditions. PMID:17256074

  11. Masking the Feeling of Being Stupid.

    ERIC Educational Resources Information Center

    Smith, Sally L.

    1988-01-01

    Teaching experience at The Lab School of Washington has shown that learning-disabled children and adults cope with their lack of self-esteem and feelings of stupidity by developing masks to hide their hurt. These include masks of super-competence, helplessness, invisibility, clowning, injustice collecting, indifference, boredom, outrageousness,…

  12. Mask industry assessment trend analysis 2006

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia

    2007-02-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data was presented at BACUS and a detailed trend analysis is presented here. The annual survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers and industry equipment makers. This year's assessment is the fifth in the current series of annual reports. With continued industry support the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify trends in the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 survey. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were only added to the survey in 2005; therefore meaningful trend analysis is not yet available.

  13. Mask industry assessment trend analysis: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2010-05-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  14. Computing Challenges in Coded Mask Imaging

    NASA Technical Reports Server (NTRS)

    Skinner, Gerald

    2009-01-01

    This slide presaentation reviews the complications and challenges in developing computer systems for Coded Mask Imaging telescopes. The coded mask technique is used when there is no other way to create the telescope, (i.e., when there are wide fields of view, high energies for focusing or low energies for the Compton/Tracker Techniques and very good angular resolution.) The coded mask telescope is described, and the mask is reviewed. The coded Masks for the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL) instruments are shown, and a chart showing the types of position sensitive detectors used for the coded mask telescopes is also reviewed. Slides describe the mechanism of recovering an image from the masked pattern. The correlation with the mask pattern is described. The Matrix approach is reviewed, and other approaches to image reconstruction are described. Included in the presentation is a review of the Energetic X-ray Imaging Survey Telescope (EXIST) / High Energy Telescope (HET), with information about the mission, the operation of the telescope, comparison of the EXIST/HET with the SWIFT/BAT and details of the design of the EXIST/HET.

  15. A mask manufacturer's perspective on maskless lithography

    NASA Astrophysics Data System (ADS)

    Buck, Peter; Biechler, Charles; Kalk, Franklin

    2005-11-01

    Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a

  16. Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-04-01

    Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native extreme ultraviolet (EUV) mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability they cause. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a multilayer growth model based on a level-set technique was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. Further, the printability of the characterized native defects was studied at the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model, was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape.

  17. Mask CD uniformity metrology for logic patterning and its correlation to wafer data

    NASA Astrophysics Data System (ADS)

    Le Gratiet, Bertrand; Zékri, Raphaël.; Sundermann, Frank; Trautzsch, Thomas; Thaler, Thomas; Birkner, Robert; Buttgereit, Ute

    2012-06-01

    With the next technology nodes 193nm lithography is pushed to its utmost limits. The industry is forced to print at low k1 factor which goes along with a high MEEF. Additionally, new blank materials are being introduced for smaller nodes. From 4x node and beyond, global CD uniformity on wafer is getting more critical and becomes key factor to ensure a high yield in chip production. Advanced process control is required and correction strategies are applied to maintain tight wafer CD uniformity. Beside other parameters, like scanner and etch process, mask CD uniformity is one main contributor to the intra-field CD on wafer. To enable effective CDU correction strategies it is necessary to establish a mask CD uniformity metrology which shows a good correlation to wafer prints. Especially for logic pattern mask uniformity measurements to control intra-field CD uniformity becomes challenging. In this paper we will focus on mask CD uniformity measurement for logic application utilizing WLCD, which is based on aerial image technology. We will investigate 40nm node and 28nm node gate masks using 6% MoSi phase shifting mask and MoSi binary mask respectively. Furthermore, we will correlate the mask CD uniformity data to wafer data to evaluate the capability of WLCD to predict the intra-field wafer CD uniformity correctly in order to support feedforward correction strategies. We will show that WLCD shows an excellent correlation to wafer data. Additionally, we will provide an outlook on logic contact-hole masks showing first CD uniformity data and wafer correlation data.

  18. New method of detection and classification of yield-impacting EUV mask defects

    NASA Astrophysics Data System (ADS)

    Graur, Ioana; Vengertsev, Dmitry; Raghunathan, Ananthan; Stobert, Ian; Rankin, Jed

    2015-10-01

    Extreme ultraviolet lithography (EUV) advances printability of small size features for both memory and logic semiconductor devices. It promises to bring relief to the semiconductor manufacturing industry, removing the need for multiple masks in rendering a single design layer on wafer. However, EUV also brings new challenges, one of which is of mask defectivity. For this purpose, much of the focus in recent years has been in finding ways to adequately detect, characterize, and reduce defects on both EUV blanks and patterned masks. In this paper we will present an efficient way to classify and disposition EUV mask defects through a new algorithm developed to classify defects located on EUV photomasks. By processing scanning electronmicroscopy images (SEM) of small regions of a photomask, we extract highdimensional local features Histograms of Oriented Gradients (HOG). Local features represent image contents compactly for detection or classification, without requiring image segmentation. Using these HOGs, a supervised classification method is applied which allows differentiating between nondefective and defective images. In the new approach we have developed a superior method of detection and classification of defects, using mask and supporting mask printed data from several metallization masks. We will demonstrate that use of the HOG method allows realtime identification of defects on EUV masks regardless of geometry or construct. The defects identified by this classifier are further divided into subclasses for mask defect disposition: foreign material, foreign material from previous step, and topological defects. The goal of disposition is to categorize on the images into subcategories and provide recommendation of prescriptive actions to avoid impact on the wafer yield.

  19. Cost effective machining and inspection of structural ceramic components for advanced high temperature application. Final CRADA report for CRADA number Y-1292-0151

    SciTech Connect

    Abbatiello, L.A.; Haselkorn, M.

    1996-11-29

    This Cooperative Research and Development Agreement (CRADA) was a mutual research and development (R and D) effort among the participants to investigate a range of advanced manufacturing technologies for two silicon nitride (Si{sub 3}N{sub 4}) ceramic materials. The general objective was to identify the most cost-effective part manufacturing processes for the ceramic materials of interest. The focus was determining the relationship between material removal rates, surface quality, and the structural characteristics of each ceramic resulting from three innovative processes. These innovated machining processes were studied using silicon nitride advanced materials. The particular (Si{sub 3}N{sub 4}) materials of interest were sintered GS-44 from the Norton Company, and reaction-bonded Ceraloy 147-3. The processes studied included the following activities: (1) direct laser machining; (2) rotary ultrasonic machining; and (3) diamond abrasive grinding, including both resinoid and vitreous-bonded grinding wheels. Both friable and non-friable diamond types were included within the abrasive grinding study. The task also conducted a comprehensive survey of European experience in use of ceramic materials, principally aluminum oxide. Originally, the effort of this task was to extend through a prototype manufacturing demonstration of selected engine components. During the execution of this program, however changes were made to the scope of the project, altering the goals. The Program goal became only the development of assessment of their impacts on product strength and surface condition.

  20. Evaluating Printability of Buried Native EUV Mask Phase Defects through a Modeling and Simulation Approach

    SciTech Connect

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-03-16

    The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect’s width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.

  1. Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-03-01

    The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.

  2. Evaluation of the efficiency of medical masks and the creation of new medical masks.

    PubMed

    Huang, J T; Huang, V I

    2007-01-01

    The effectiveness of medical masks in preventing respiratory infection was investigated by testing bacterial leakage, filtration efficiency, respiratory resistance and oxygen concentration of the enclosed space. Polypropylene (PP) fibres were treated with dimethyldioctadecylammonium bromide to impart a positive electrical charge capable of attracting bacteria. The fluffed PP fibres were used to make a polypropylene mask and to edge standard surgical and N-95 respirators to prevent leakage. A PP napkin was created by melting and blowing PP. The PP edging seal dramatically reduced bacterial leakage of standard masks and was more effective than adhesive paper tape edging in reducing respiratory resistance. Bacterial or viral filtration efficiency was almost 100% for the PP mask and the PP napkin. The specially designed PP mask with a synthetic adhesive at the edge of the mask may be more effective than the standard surgical mask and the N-95 respirator. The PP napkin is an important tool in preventing the spread of pathogens. PMID:17542408

  3. Wearable Monitor Helps Spot 'Masked' High Blood Pressure

    MedlinePlus

    ... fullstory_158860.html Wearable Monitor Helps Spot 'Masked' High Blood Pressure Black people with undetected problem twice as likely ... doctors spot black people with "masked," or undetected, high blood pressure, a new study suggests. "Masked" high blood pressure ...

  4. Cheap Face Masks Little Help Against Air Pollutants

    MedlinePlus

    ... News) -- Inexpensive cloth masks offer little protection against air pollution, a new study suggests. Many people in Asia ... or washable cloth masks to protect against small air pollution particles. But tests on different types of masks ...

  5. Piping inspection instrument carriage

    SciTech Connect

    Zollinger, W.T.; Treanor, R.C.

    1993-09-20

    This invention is comprised of a pipe inspection instrument carriage for use with a pipe crawler or other locomotion means for performing internal inspections of piping surfaces. The carriage has a front leg assembly, a rear leg assembly and a central support connecting the two assemblies and for mounting an instrument arm having inspection instruments. The instrument arm has means mounted distally thereon for axially aligning the inspection instrumentation and means for extending the inspection instruments radially outward to operably position the inspection instruments on the piping interior. Also, the carriage has means for rotating the central support and the front leg assembly with respect to the rear leg assembly so that the inspection instruments azimuthally scan the piping interior. The instrument carriage allows performance of all piping inspection operations with a minimum of moving parts, thus decreasing the likelihood of performance failure.

  6. Nasal mask ventilation is better than face mask ventilation in edentulous patients

    PubMed Central

    Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

    2016-01-01

    Background and Aims: Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Material and Methods: Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. Results: A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Conclusion: Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients. PMID:27625477

  7. Study on overlay AEI-ADI shift on contact layer of advanced technology node

    NASA Astrophysics Data System (ADS)

    Deng, Guogui; Hao, Jingan; Xiao, Lihong; Xing, Bin; Jiang, Yuntao; He, Kaiting; Zhang, Qiang; He, Weiming; Liu, Chang; Lin, Yi-Shih; Wu, Qiang; Shi, Xuelong

    2016-03-01

    In this paper, we present a study on the overlay (OVL) shift issue in contact (CT) layer aligned to poly-silicon (short as poly) layer (prior layer) in an advanced technology node [1, 2]. We have showed the wafer level OVL AEI-ADI shift (AEI: After Etch Inspection; ADI: After Developing Inspection; AEI-ADI: AEI minus ADI). Within the shot level map, there exists a center-edge difference. The OVL focus subtraction map can well match the OVL AEI-ADI shift map. Investigation into this interesting correlation finally leads to the conclusion of PR tilt. The film stress of the thick hard mask is responsible for the PR tilt. The method of OVL focus subtraction can therefore be a powerful and convenient tool to represent the OVL mark profile. It is also important to take into account the film deposition when investigating OVL AEI-ADI shift.

  8. Masking property of quantum random cipher with phase mask encryption

    NASA Astrophysics Data System (ADS)

    Sohma, Masaki; Hirota, Osamu

    2014-10-01

    The security analysis of physical encryption protocol based on coherent pulse position modulation (CPPM) originated by Yuen is one of the most interesting topics in the study of cryptosystem with a security level beyond the Shannon limit. Although the implementation of CPPM scheme has certain difficulty, several methods have been proposed recently. This paper deals with the CPPM encryption in terms of symplectic transformation, which includes a phase mask encryption as a special example, and formulates a unified security analysis for such encryption schemes. Specifically, we give a lower bound of Eve's symbol error probability using reliability function theory to ensure that our proposed system exceeds the Shannon limit. Then we assume the secret key is given to Eve after her heterodyne measurement. Since this assumption means that Eve has a great advantage in the sense of the conventional cryptography, the lower bound of her error indeed ensures the security level beyond the Shannon limit. In addition, we show some numerical examples of the security performance.

  9. Mask process matching using a model based data preparation solution

    NASA Astrophysics Data System (ADS)

    Dillon, Brian; Saib, Mohamed; Figueiro, Thiago; Petroni, Paolo; Progler, Chris; Schiavone, Patrick

    2015-10-01

    Process matching is the ability to precisely reproduce the signature of a given fabrication process while using a different one. A process signature is typically described as systematic CD variation driven by feature geometry as a function of feature size, local density or distance to neighboring structures. The interest of performing process matching is usually to address differences in the mask fabrication process without altering the signature of the mask, which is already validated by OPC models and already used in production. The need for such process matching typically arises from the expansion of the production capacity within the same or different mask fabrication facilities, from the introduction of new, perhaps more advanced, equipment to deliver same process of record masks and/or from the re-alignment of processes which have altered over time. For state-of-the-art logic and memory mask processes, such matching requirements can be well below 2nm and are expected to reduce below 1nm in near future. In this paper, a data preparation solution for process matching is presented and discussed. Instead of adapting the physical process itself, a calibrated model is used to modify the data to be exposed by the source process in order to induce the results to match the one obtained while running the target process. This strategy consists in using the differences among measurements from the source and target processes, in the calibration of a single differential model. In this approach, no information other than the metrology results is required from either process. Experimental results were obtained by matching two different processes at Photronics. The standard deviation between both processes was of 2.4nm. After applying the process matching technique, the average absolute difference between the processes was reduced to 1.0nm with a standard deviation of 1.3nm. The methods used to achieve the result will be described along with implementation considerations, to

  10. Electronic Inspection of Beef

    NASA Technical Reports Server (NTRS)

    Anselmo, Victor J.; Gammell, Paul M.; Clark, Jerry

    1987-01-01

    Two proposed methods for grading beef quality based on inspection by electronic equipment: one method uses television camera to generate image of a cut of beef as customer sees it; other uses ultrasonics to inspect live animal or unsliced carcasses. Both methods show promise for automated meat inspection.

  11. Software Formal Inspections Guidebook

    NASA Technical Reports Server (NTRS)

    1993-01-01

    The Software Formal Inspections Guidebook is designed to support the inspection process of software developed by and for NASA. This document provides information on how to implement a recommended and proven method for conducting formal inspections of NASA software. This Guidebook is a companion document to NASA Standard 2202-93, Software Formal Inspections Standard, approved April 1993, which provides the rules, procedures, and specific requirements for conducting software formal inspections. Application of the Formal Inspections Standard is optional to NASA program or project management. In cases where program or project management decide to use the formal inspections method, this Guidebook provides additional information on how to establish and implement the process. The goal of the formal inspections process as documented in the above-mentioned Standard and this Guidebook is to provide a framework and model for an inspection process that will enable the detection and elimination of defects as early as possible in the software life cycle. An ancillary aspect of the formal inspection process incorporates the collection and analysis of inspection data to effect continual improvement in the inspection process and the quality of the software subjected to the process.

  12. Quantitative evaluation of mask phase defects from through-focus EUV aerial images

    SciTech Connect

    Mochi, Iacopo; Yamazoe, Kenji; Neureuther, Andrew; Goldberg, Kenneth A.

    2011-02-21

    Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with predictions made from AFM top-surface measurements of those defects. While amplitude defects are usually easy to recognize and quantify with standard inspection techniques like scanning electron microscopy (SEM), defects or structures that have a phase component can be much more challenging to inspect. A phase defect can originate from the substrate or from any level of the multilayer. In both cases its effect on the reflected field is not directly related to the local topography of the mask surface, but depends on the deformation of the multilayer structure. Using the AIT, we have previously showed that EUV inspection provides a faithful and reliable way to predict the appearance of mask defect on the printed wafer; but to obtain a complete characterization of the defect we need to evaluate quantitatively its phase component. While aerial imaging doesn't provide a direct measurement of the phase of the object, this information is encoded in the through focus evolution of the image intensity distribution. Recently we developed a technique that allows us to extract the complex amplitude of EUV mask defects using two aerial images from different focal planes. The method for the phase reconstruction is derived from the Gerchberg-Saxton (GS

  13. Experimental and simulation studies of printability of buried EUV mask defects and study of EUV reflectivity loss mechanisms due to standard EUV mask cleaning processes

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihirkant

    waveguide algorithms. The simulation results were compared with through-focus aerial images obtained at the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL), and a good match was obtained between them. Further, an approximate but robust method was developed for investigating the defect printability of arbitrarily-shaped native defects given the AFM defect profiles on top of the multilayer stack. Given the full-width at half-maximum (FWHM) and height of the defect, as obtained from top layer AFM, we were able to infer the bottom defect profile in terms of FWHM and height, through study of multiple native EUV mask defects. Multilayer growth over native, Gaussian and regular-shaped substrate defect profiles (having similar FWHM and heights) was simulated using the level-set multilayer growth model and their printability performances were compared, in terms of aerial image intensities, and reasonable comparison was obtained between them.

  14. Global image placement of LEEPL mask

    NASA Astrophysics Data System (ADS)

    Eguchi, Hideyuki; Susa, Takashi; Sumida, Tomoya; Kurosu, Toshiaki; Yoshii, Takashi; Yotsui, Kenta; Sugimura, Hiroshi; Itoh, Kojiro; Tamura, Akira

    2004-12-01

    Two types of strut-supported low energy electron-beam proximity projection lithography (LEEPL) masks which are grid-type mask and COSMOS-type mask, were investigated for Global image placement (IP). First, we evaluated the dynamic repeatability measurement performance for global IP, measuring a same mask 10 times on a 46 x 46 mm pattern area by using LEEPL electrostatic chuck (ESC). The measurement repeatability for grid type and COSMOS type were 5.1/7.8 nm and 4.4/5.8 nm in x/y directions respectively. And then global in-plane distortion (IPD) of COSMOS type masks with various stress and flatness were measured. The global IPD of a COSMOS-type mask with a low stress of 10 MPa and a flatness of 3.1 μm was 6.5/6.4 nm in x/y directions, which is negligible assuming the measurement repeatability. Finally the global IPs of the two-type masks were measured. The global IPs for the grid-type and COSMOS-type were 24.5/15.7 nm and 23.2/16.4 nm in x/y directions respectively. Thus we confirmed that the global IP obtained meet the required value of less than 30 nm.

  15. LCD masks for spatial augmented reality

    NASA Astrophysics Data System (ADS)

    Smithwick, Quinn Y. J.; Reetz, Daniel; Smoot, Lanny

    2014-03-01

    One aim of Spatial Augmented Reality is to visually integrate synthetic objects into real-world spaces amongst physical objects, viewable by many observers without 3D glasses, head-mounted displays or mobile screens. In common implementations, using beam-combiners, scrim projection, or transparent self-emissive displays, the synthetic object's and real-world scene's light combine additively. As a result, synthetic objects appear low-contrast and semitransparent against well-lit backgrounds, and do not cast shadows. These limitations prevent synthetic objects from appearing solid and visually integrated into the real-world space. We use a transparent LCD panel as a programmable dynamic mask. The LCD panel displaying the synthetic object's silhouette mask is colocated with the object's color image, both staying aligned for all points-of-view. The mask blocks the background providing occlusion, presents a black level for high-contrast images, blocks scene illumination thus casting true shadows, and prevents blow-by in projection scrim arrangements. We have several implementations of SAR with LCD masks: 1) beam-combiner with an LCD mask, 2) scrim projection with an LCD mask, and 3) transparent OLED display with an LCD mask. Large format (80" diagonal) and dual layer volumetric variations are also implemented.

  16. An interactive tool for gamut masking

    NASA Astrophysics Data System (ADS)

    Song, Ying; Lau, Cheryl; Süsstrunk, Sabine

    2014-02-01

    Artists often want to change the colors of an image to achieve a particular aesthetic goal. For example, they might limit colors to a warm or cool color scheme to create an image with a certain mood or feeling. Gamut masking is a technique that artists use to limit the set of colors they can paint with. They draw a mask over a color wheel and only use the hues within the mask. However, creating the color palette from the mask and applying the colors to the image requires skill. We propose an interactive tool for gamut masking that allows amateur artists to create an image with a desired mood or feeling. Our system extracts a 3D color gamut from the 2D user-drawn mask and maps the image to this gamut. The user can draw a different gamut mask or locally refine the image colors. Our voxel grid gamut representation allows us to represent gamuts of any shape, and our cluster-based image representation allows the user to change colors locally.

  17. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  18. The Sensitivity of Coded Mask Telescopes

    NASA Technical Reports Server (NTRS)

    Skinner, Gerald K.

    2008-01-01

    Simple formulae are often used to estimate the sensitivity of coded mask X-ray or gamma-ray telescopes, but t,hese are strictly only applicable if a number of basic assumptions are met. Complications arise, for example, if a grid structure is used to support the mask elements, if the detector spatial resolution is not good enough to completely resolve all the detail in the shadow of the mask or if any of a number of other simplifying conditions are not fulfilled. We derive more general expressions for the Poisson-noise-limited sensitivity of astronomical telescopes using the coded mask technique, noting explicitly in what circumstances they are applicable. The emphasis is on using nomenclature and techniques that result in simple and revealing results. Where no convenient expression is available a procedure is given which allows the calculation of the sensitivity. We consider certain aspects of the optimisation of the design of a coded mask telescope and show that when the detector spatial resolution and the mask to detector separation are fixed, the best source location accuracy is obtained when the mask elements are equal in size to the detector pixels.

  19. Mask industry assessment trend analysis: 2012

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2012-02-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year's assessment was the tenth in the current series of annual reports. This year's survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

  20. Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Terao, Kenji

    2015-07-01

    High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.

  1. Software Formal Inspections Standard

    NASA Technical Reports Server (NTRS)

    1993-01-01

    This Software Formal Inspections Standard (hereinafter referred to as Standard) is applicable to NASA software. This Standard defines the requirements that shall be fulfilled by the software formal inspections process whenever this process is specified for NASA software. The objective of this Standard is to define the requirements for a process that inspects software products to detect and eliminate defects as early as possible in the software life cycle. The process also provides for the collection and analysis of inspection data to improve the inspection process as well as the quality of the software.

  2. When Bad Masks Turn Good

    NASA Astrophysics Data System (ADS)

    Abraham, Roberto G.

    In keeping with the spirit of a meeting on ‘masks,' this talk presents two short stories on the theme of dust. In the first, dust plays the familiar role of the evil obscurer, the enemy to bedefeated by the cunning observer in order to allow a key future technology (adaptive optics) to be exploited fully by heroic astronomers. In the second story, dust itself emerges as the improbable hero, in the form of a circumstellar debris disks. I will present evidence of a puzzling near-infrared excess in the continuum of high-redshift galaxies and will argue that the seemingly improbable origin of this IR excess is a population of young circumstellar disks formed around high-mass stars in distant galaxies. Assuming circumstellar disks extend down to lower masses,as they do in our own Galaxy, the excess emission presents us with an exciting opportunity to measure the formation rate of planetary systems in distant galaxies at cosmic epochs before our own solar system formed.

  3. Masked PDAMNA Film On Glass

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Polydiacetylenes are a unique class of highly conjugated organic polymers that are of interest for both electronic and photonic applications. Photodeposition from solutions is a novel process superior to those grown by conventional techniques. Evidence of this is seen when the films are viewed under a microscope; they exhibit small particles of solid polymer which form in the bulk solution, get transported by convection to the surface of the growing film, and become embedded. Also convection tends to cause the film thickness to be less uniform, and may even affect the molecular orientation of the films. The thrust of the research is to investigate in detail, both in 1-g and low-g, the effects of convection (and lack thereof) on this novel and interesting reaction. In this example, a portion of the substrate was blocked from exposure to the UV light by the mask, which was placed on the opposite side of the glass disk as the film, clearly demonstrating that photodeposition occurs only where the substrate is irradiated directly.

  4. Augmented Computer Exercise for Inspection Training (ACE-IT) - an interactive training tool for {open_quotes}challenge inspections{close_quotes} under the chemical weapons convention

    SciTech Connect

    Dobranich, P.R.

    1997-08-01

    The on-site inspection provisions in many current and proposed arms control agreements require extensive preparation and training on the part of both the Inspection Teams and the Inspected Parties. Current training techniques include lectures, table-top inspections, and practice inspections. The Augmented Computer Exercise for Inspection Training (ACE-IT), an interactive computer training tool, increases the utility of table-top inspections. Under the Chemical Weapons Convention (CWC) challenge inspections are short-notice inspections that may occur anywhere, anytime, and with no right of refusal. The time interval between notice of intent to inspect a facility and the arrival of inspectors at the facility may be as short as 72 hours. Therefore, advance training is important. ACE-IT is used for training both the Inspection Team (inspector) and the Inspected Party (host) to conduct a hypothetical challenge inspection under the CWC. An exercise moderator controls the exercise. The training covers all of the events in the challenge inspection regime, from initial notification of an inspection through post-inspection activities. But the primary emphasis of the training tool is on conducting the inspection itself, and in particular, the concept of managed access. Managed access is used to assure the inspectors that the facility is in compliance with the CWC, while protecting sensitive information that is not related to the CWC.

  5. Fabrication, Inspection, and Test Plan for the Advanced Test Reactor (ATR) High-Power Mixed-Oxide (MOX) Fuel Irradiation Project

    SciTech Connect

    Wachs, G. W.

    1998-09-01

    The Department of Energy (DOE) Fissile Disposition Program (FMDP) has announced that reactor irradiation of Mixed-Oxide (MOX) fuel is one of the preferred alternatives for disposal of surplus weapons-usable plutonium (Pu). MOX fuel has been utilized domestically in test reactors and on an experimental basis in a number of Commercial Light Water Reactors (CLWRs). Most of this experience has been with Pu derived from spent low enriched uranium (LEU) fuel, known as reactor grade (RG) Pu. The High-Power MOX fuel test will be irradiated in the Advanced Test Reactor (ATR) to provide preliminary data to demonstrate that the unique properties of surplus weapons-derived or weapons-grade (WG) plutonium (Pu) do not compromise the applicability of this MOX experience base. The purpose of the high-power experiment, in conjunction with the currently ongoing average-power experiment at the ATR, is to contribute new information concerning the response of WG plutonium under more severe irradiation conditions typical of the peak power locations in commercial reactors. In addition, the high-power test will contribute experience with irradiation of gallium-containing fuel to the database required for resolution of generic CLWR fuel design issues. The distinction between "high-power" and "average-power" relates to the position within the nominal CLWR core. The high-power test project is subject to a number of requirements, as discussed in the Fissile Materials Disposition Program Light Water Reactor Mixed Oxide Fuel Irradiation High-Power Test Project Plan (ORNL/MD/LTR-125).

  6. Investigation of EUV haze defect: molecular behaviors of mask cleaning chemicals on EUV mask surfaces

    NASA Astrophysics Data System (ADS)

    Choi, Jaehyuck; Novak, Steve; Kandel, Yudhishthir; Denbeaux, Greg; Lee, Han-shin; Ma, Andy; Goodwin, Frank

    2012-03-01

    Photo-induced defects (or haze defects) on 193nm optic masks (haze defects) have been a serious problem not only to reticle engineers working for mask manufacturing and handling but also to photo-lithography engineers. The most widely accepted explanation of the root causes of haze defects is the cleaning chemical residues remaining on the mask surface and unavoidable outgassed molecules that outgas from pellicle materials when exposed to 193nm radiation. These have been significant challenges for reticle cleaning engineers who need to use cleaning chemicals whose residues do not lead to progressive defect formation on the mask and to find improved materials to minimize pellicle outgassing. It is assumed that contamination generation on EUV masks would have a higher probability than on optic masks, primarily since EUV masks are not protected by a pellicle and amorphous carbon films can accumulate during exposure to EUV light. While there is potential to mitigate the generation of carbon contamination by improving the exposure tool environment and removing carbon films using in-situ atomic hydrogen cleaning, it is not yet clear whether the reaction of mask cleaning chemicals to EUV radiation will lead to creation of progressive defects on EUV mask surfaces. With the work to being done it has been observed that carbon contamination on EUV masks dominates any effects of solvent chemicals under normal environmental or exposure conditions (from atmospheric pressure up to a vacuum level of 10-6 Torr) during EUV exposure. However, it is still unknown whether residual cleaning chemicals will provide a nucleus for progressive defect formation during exposure. This lack of understanding needs to be addressed by the industry as EUV masks are expected to undergo more frequent cleaning cycles. In this work, we will report on an investigation of the molecular behavior of cleaning chemicals on EUV mask surfaces during EUV exposure. Movement (e.g., migration or aggregation) of

  7. Wafer scale fabrication of submicron chessboard gratings using phase masks in proximity lithography

    NASA Astrophysics Data System (ADS)

    Stuerzebecher, Lorenz; Harzendorf, Torsten; Fuchs, Frank; Zeitner, Uwe D.

    2012-03-01

    One and two dimensional grating structures with submicron period have a huge number of applications in optics and photonics. Such structures are conventionally fabricated using interference or e-beam lithography. However, both technologies have significant drawbacks. Interference lithography is limited to rather simple geometries and the sequential writing scheme of e-beam lithography leads to time consuming exposures for each grating. We present a novel fabrication technique for this class of microstructures which is based on proximity lithography in a mask aligner. The technology is capable to pattern a complete wafer within less than one minute of exposure time and offers thereby high lateral resolution and a reliable process. Our advancements compared to standard mask aligner lithography are twofold: First of all, we are using periodic binary phase masks instead of chromium masks to generate an aerial image of high resolution and exceptional light efficiency at certain distances behind the mask. Second, a special mask aligner illumination set-up is employed which allows to precisely control the incidence angles of the exposure light. This degree of freedom allows both, to shape the aerial image (e. g. transformation of a periodic spot pattern into a chessboard pattern) and to increase its depth of focus considerably. That way, our technology enables the fabrication of high quality gratings with arbitrary geometry in a fast and stable wafer scale process.

  8. Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations

    SciTech Connect

    Naulleau, Patrick; George, Simi

    2011-01-26

    In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

  9. Masking of aluminum surface against anodizing

    NASA Technical Reports Server (NTRS)

    Crawford, G. B.; Thompson, R. E.

    1969-01-01

    Masking material and a thickening agent preserve limited unanodized areas when aluminum surfaces are anodized with chromic acid. For protection of large areas it combines well with a certain self-adhesive plastic tape.

  10. Simplified models for mask roughness induced LER

    SciTech Connect

    McClinton, Brittany; Naulleau, Patrick

    2011-02-21

    The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.

  11. 7 CFR 29.68 - Advance information.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Advance information. 29.68 Section 29.68 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... INSPECTION Regulations Permissive Inspection § 29.68 Advance information. Upon the request of an...

  12. VSP wave separation by adaptive masking filters

    NASA Astrophysics Data System (ADS)

    Rao, Ying; Wang, Yanghua

    2016-06-01

    In vertical seismic profiling (VSP) data processing, the first step might be to separate the down-going wavefield from the up-going wavefield. When using a masking filter for VSP wave separation, there are difficulties associated with two termination ends of the up-going waves. A critical challenge is how the masking filter can restore the energy tails, the edge effect associated with these terminations uniquely exist in VSP data. An effective strategy is to implement masking filters in both τ-p and f-k domain sequentially. Meanwhile it uses a median filter, producing a clean but smooth version of the down-going wavefield, used as a reference data set for designing the masking filter. The masking filter is implemented adaptively and iteratively, gradually restoring the energy tails cut-out by any surgical mute. While the τ-p and the f-k domain masking filters target different depth ranges of VSP, this combination strategy can accurately perform in wave separation from field VSP data.

  13. Influence of mask manufacturing process on printing behavior of angled line structures

    NASA Astrophysics Data System (ADS)

    Teuber, Silvio; Dürr, Arndt C.; Herguth, Holger; Kunkel, Gerhard; Wandel, Timo; Zell, Thomas

    2006-03-01

    For the successful reduction of chip production costs, the usage of more advanced designs with lower area consumption by manufacturing angled line structures is one possibility. The usage of conventional vector shaped electron beam writers does only allow writing Manhattan-like structures as well as 45 degree angled structures. There are several approximation possibilities for writing any angled lines, e.g. they could be approximated by writing only small rectangles or small rectangles in combination with small 45 degree triangles. This method introduces a very pronounced line edge roughness due to the written uneven edges. The critical dimension uniformity on the mask and the printing behavior are directly influenced by this synthesized line edge roughness. This paper addresses the investigation of critical dimension of the angled mask structures as well as the influence on the printing behavior. The different masks used in the experiment were patterned at the Advanced Mask Technology Center (AMTC). Measurements of pattern line widths were performed by using scanning electron microscopy techniques. The printing behavior of different structures was investigated by running AIMS measurements and performing exposure experiments. Comparing the mask structures and the final printed wafer structures, estimations on the transfer function of the synthesized line edge roughness could be performed.

  14. The role of mask topography effects in the optimization of pixelated sources

    NASA Astrophysics Data System (ADS)

    Domnenko, Vitaliy; Küchler, Bernd; Mülders, Thomas; Schmöller, Thomas; Stock, Hans-Jürgen; Viehöver, Georg

    2010-04-01

    Ongoing technology node shrinkage requires the lithographic k1 factor to be pushed closer to its theoretical limit. The application of customized illumination with multi-pole or pixelated sources has become necessary for improving the process window. For standardized exploitation of this technique it is crucial that the optimum source shape and the corresponding intensity distributions can be found in a robust and automated way. In this paper we present a pixelated source optimization procedure and its results. A number of application cases are considered with the following optimization goals: i) enhancement of the depth of focus, ii) improvement of through-pitch behavior, and iii) error sensitivity reduction. The optimization procedure is performed with fixed mask patterns, but at multiple locations. To reduce optical proximity errors, mask biasing is introduced. The optimization results are obtained for the pixelated source shapes, analyzed and compared with the corresponding results for multi-pole shaped sources. Starting with the 45 nm node mask topography effects as well as light polarization conditions have significant impact on imaging performance. Therefore including these effects into the optimization procedure has become necessary for advanced process nodes. To investigate these effects, the advanced topographical mask illumination concept (AToMIC) for rigorous and fast electromagnetic field simulation under partially coherent illumination is applied. We demonstrate the impact of mask topography effects on the results of the source optimization procedure by comparison to corresponding Kirchhoff simulations. The effects of polarized illumination sources are taken into account.

  15. Computational techniques for determining printability of real defects in EUV mask pilot line

    NASA Astrophysics Data System (ADS)

    Morgan, Paul; Rost, Daniel; Price, Daniel; Li, Ying; Peng, Daniel; Chen, Dongxue; Hu, Peter; Corcoran, Noel; Son, Donghwan; Yonenaga, Dean; Tolani, Vikram

    2014-04-01

    With EUV lithography on the ITRS roadmap for sub-2X half-pitch patterning, it has become increasingly essential to ramp up efforts in being able to manufacture defect-free reticles or at least ones with minimal defects initially. For this purpose, much of the focus in recent years has been in finding ways to adequately detect, characterize, and reduce defects on both EUV blanks and patterned masks. For detection purposes, the current high-resolution DUV or e-beam inspection platforms are being extended to inspect EUV blanks and patterned masks but being non-actinic, make it very challenging to assess the real impact of the detected defects on EUV plane. Even with the realization of the EUV beta AIMS™ aerial-image based metrology in 2014-2015, the exact nature of each critical defect needs to be determined in order to be able to come up with an appropriate repair strategy. In this paper, we demonstrate the application of computational techniques to non-actinic supplemental metrology data collected on EUV mask defects to effectively determine the nature and also predict printability of these defects. The fundamental EUV simulation engine used in this approach is the EUV Defect Printability Simulator (DPS), which uses simulation and modeling methods designed specifically for the individual EUV mask components, and achieves runtimes several orders of magnitude faster than rigorous FDTD and RCWA methods while maintaining adequate accuracy. The EUV DPS simulator is then coupled with supplemental inspection and metrology measurements of real defects to effectively predict wafer printability of these defects. Several sources of such supplementary data are explored here, and may sometimes be dependent on the actual nature of defect. These sources include AFM height-profile data, SEM top-down images, and 193nm high-NA inspection images of single or multiple focus plane capture. From each of these supplemental data sources, the mask pattern and defect information is first

  16. GDS-based Mask Data Preparation Flow: Data Volume Containment by Hierarchical Data Processing

    NASA Astrophysics Data System (ADS)

    Schulze, Steffen F.; LaCour, Pat; Buck, Peter D.

    2002-12-01

    As the industry enters the development of the 65nm node the pressure on the data path and tapeout flow is growing. Design complexity and increased deployment of resolution enhancement techniques (RET) result in rapidly growing file sizes, which turns what used to be the relatively simple task of mask data preparation into a real bottleneck. This discussion introduces the data preparation scheme in the mask house and analyzes its evolution. Mask data preparation (MDP) has evolved from a flow that only needed to support a single mask lithography tool data format (MEBES) with minimal data alteration steps to one which requires the support of many mask lithography tool data formats and at the same time requires significant data alteration to support the increased precision necessary for today"s advanced masks.. However, the MDP flow developed around the MEBES format and it"s derivatives still exists. The design community has migrated towards the use of hierarchical data formats and processes to control file size and processing time. MDP, which from a file size and process complexity point of view is beginning to look more and more like the advanced RET operations performed on the data prior to mask manufacturing, is still standardized on a flat data format that is poorly optimized for a growing number of mask lithography tools. Based on examples it will be shown how this complicates the data handling further. An alternate data preparation flow accommodating the larger files and re-gaining flexibility for turnaround time (TAT) and throughput management is suggested. This flow utilizes the hierarchical GDS-II format as the exchange format for mask data preparation. It complements the existing flow for the most complex designs. The introduction of a hierarchical exchange format enables the transfer of a number of necessary data preparation steps into the hierarchical domain. Data processing strategies are discussed. The paper illustrates the benefit of hierarchical

  17. 21 CFR 868.5560 - Gas mask head strap.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Gas mask head strap. 868.5560 Section 868.5560...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5560 Gas mask head strap. (a) Identification. A gas mask head strap is a device used to hold an anesthetic gas mask in position on a...

  18. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ....111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its design... each gas mask shall meet the minimum construction requirements set forth in subpart G of this part. ... 42 Public Health 1 2011-10-01 2011-10-01 false Gas masks; required components. 84.111 Section...

  19. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2012-07-01 2012-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  20. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2013-07-01 2013-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  1. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  2. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  3. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2014-07-01 2014-07-01 false Mask work fees. 211.3 Section... AND PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask...

  4. Ceramic Masks--A Multi-Cultural Experience

    ERIC Educational Resources Information Center

    Penn, Elizabeth E.

    1978-01-01

    The creation of ceramic masks in reaction to the film, Roots, focused on the functions of the masks themselves within a particular society, the materials and techniques used to create these masks, and the identification of typical shapes of heads and facial features on the masks in each culture. (Author/RK)

  5. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas masks; required components. 84.111 Section 84... AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its...

  6. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas masks; required components. 84.111 Section 84... AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its...

  7. A systematic approach to the determination of SRAF capabilities in high end mask manufacturing

    NASA Astrophysics Data System (ADS)

    Bürgel, Christian; Sczyrba, Martin; Cantrell, G. R.

    2010-09-01

    The continued shrink of integrated circuit patterns increases the demand for reticle enhancement techniques (RET). The application of Sub Resolution Assist Features (SRAFs) is pushing mask processes to the resolution limit. Many Chemically Amplified Resists (CAR) used in current photomask processes do not have the capability to fully meet the current demand for SRAF resolution. Often the resulting quality of small SRAFs suffers from pattern fidelity limitations like Line End Shorting (LES) and corner rounding. While small SRAFs might physically resolve on the mask, these limitations cause massive nuisance detections at defect inspections. In a productive environment, high levels of nuisance detections are not acceptable due to the cycle time impact from classification and review. The AMTC systematically investigated the SRAF capability of different mask processes in order to better understand the process limitations as well as to predict the manufacturability of customer patterns. This investigation uses high sensitivity inspections of a specially designed test pattern to determine the SRAF capability limits. An overview of the predicted SRAF capabilities for different resists and blank substrates is provided along with verification on customer layouts.

  8. DIVAS: fully automated simulation based mask defect dispositioning and defect management system

    NASA Astrophysics Data System (ADS)

    Munir, Saghir; Bald, Daniel J.; Tolani, Vikram; Ghadiali, Firoz; Lieberman, Barry

    2004-12-01

    This article presents the evolution of the first fully automated simulation based mask defect dispositioning and defect management system used since late 2002 in a production environment at Intel Mask Operation (IMO). Given that inspection tools flag defects which may or may not have any lithographic significance, it makes sense to repair only those defects that resolve on the wafer. The system described here is a fully automated defect dispositioning system, where the lithographic impact of a defect is determined through computer simulation of the mask level image. From the simulated aerial images, combined with image processing techniques, the system can automatically determine the actual critical dimension (CD) impact (in nanometers). Then, using the product specification as a criteria, can pass or fail the defect. Furthermore, this system allows engineers and technicians in the factory to track defects as they are repaired, compare defects at various inspection steps and annotate repair history. Trends such as yield and defect commonality can also be determined. The article concludes with performance results, indicating the speed and accuracy of the system, as well as the savings in the number of defects needing repair.

  9. The Effect of a Diving Mask on Intraocular Pressure in a Healthy Population

    PubMed Central

    Goenadi, Catherina Josephine; Law, David Zhiwei; Lee, Jia Wen; Ong, Ee Lin; Chee, Wai Kitt; Cheng, Jason

    2016-01-01

    Purpose Swimming goggles increase the intraocular pressure (IOP) via the periorbital frame pressure and suction effect. In comparison, diving masks have a larger frame rim and incorporate the nose. The exact effect(s) of diving masks on IOP is unknown. This study evaluates the influence of diving masks on IOP in normal, healthy subjects. Methods Tonometry was performed in both eyes of all subjects with an AVIA®Tono-Pen by a single investigator. Measurements were taken at baseline without the diving mask and with the subjects wearing a small-volume, double-window diving mask, but with the mask lenses removed. Two IOP readings in each eye were measured, and an additional reading was measured if the difference between the initial 2 was ≥2 mm Hg. Central corneal thickness (CCT) was also measured in each eye, using a contact pachymeter (OcuScan®Alcon). Results Forty eyes of 20 healthy volunteers (age 29.7 ± 9.3 years; range 21–52) were included. The mean CCT was 544.4 ± 43.5 µm. The mean IOP before the diving mask was worn had been 17.23 ± 2.18 mm Hg (n = 40). The IOP decreased by 0.43 mm Hg (p $1003c; 0.05) to 16.80 ± 2.57 mm Hg after the diving mask had been put on. There was no correlation between IOP change and age (r = 0.143, p = 0.337), gender (r = −0.174, p = 0.283) or CCT (r = −0.123, p = 0.445). Conclusion There was no increase in IOP after the diving mask had been worn. A small but statistically significant decrease in IOP was observed. This study demonstrates that unlike swimming goggles, the strap tension and frame pressure on the periorbital tissue from a diving mask does not increase IOP. Diving masks may be a suitable alternative to swimming goggles for patients with advanced glaucoma or glaucoma filtration surgery. PMID:27462262

  10. Wide-band six-region phase mask coronagraph.

    PubMed

    Hou, Fanzhen; Cao, Qing; Zhu, Minning; Ma, Ourui

    2014-01-27

    An achromatic six-region phase mask coronagraph, used for the detection of exoplanets, is proposed. The mask has six regions in angular direction and could work in wideband. Furthermore, a six-level phase mask, as an example of the six-region phase mask, is theoretically investigated. According to numerical simulations, this specific mask has a deep elimination of starlight, good performance of achromatism and small inner working angle. As a single phase mask, the ratio of the remaining starlight of the six-level phase mask to the total incident starlight is less than 0.001 when the wavelength is between 500 nm and 600 nm. PMID:24515197

  11. Computer aided inspection qualification

    NASA Astrophysics Data System (ADS)

    McNab, D.; McNab, A.; Potts, A.; Toft, M.; McDonald, J.

    2002-05-01

    Inspection Qualification under the ENIQ methodology uses a Technical Justification as a key element in assuring the performance of the inspection. It combines a mixture of physical reasoning and modeling linked to limited experimental trial data from identified worst-case defects, but the qualification process is costly and time-consuming. This paper describes an investigation into providing an integrated set of intelligent software tools to aid the process of inspection qualification.

  12. Waste Inspection Tomography (WIT)

    SciTech Connect

    Bernardi, R.T.; Han, Kyung S.

    1994-11-01

    This article describes the Waste Inspection Tomography Program. The program provides an inspection system that offers the nuclear waste evaluator a unique combination of tools for regulatory-driven characterization of low-level waste, transuranic waste, and mixed waste drums. WIT provides nondestructive, noninvasive and environmentally safe inspections using x-ray and gamma ray technologies with reasonable cost and throughput. included are background information; project description; and results. 11 figs.

  13. Automatic optimization of MEEF-driven defect disposition for contamination inspection challenges

    NASA Astrophysics Data System (ADS)

    Huang, Tracy; Dayal, Aditya; Bhattacharyya, Kaustuve; Huang, Joe; Chou, William; Cheng, Yung-Feng; Yen, Shih-Ming; Cheng, James; Peng, Peter

    2007-10-01

    Ever-tightened design rules and ensuing aggressive OPC features pose significant challenges for wafer fabs in the pursuit of compelling yield and productivity. The introduction of advanced reticles considerably augments the mask error enhancement factor (MEEF) where progressive defects or haze, induced by repeated laser exposure, continue to be a source of reticle degradation threatening device yield. High resolution reticle inspection now emerges as a rescue venue for wafer fabs to assure their photomask integrity during intensive deep UV exposure. Integrated in the high resolution reticle inspection, a MEEF-driven lithographic detector "Litho3" can be used run-time to group critical defects into a single bin. Previous investigations evinced that critical defects identified by such detector were directly correlated with defects printed on wafer, upon which fab users can make cogent decisions towards reticle disposition and cleaning therefore reduce cycle time. One of the challenges of implementing such detector resides in the lengthy set up of user-defined parameters, from practitioner standpoint, can considerably extend reticle inspection time and inevitably delay production. To overcome this, an automatic simulation program has been written to optimize Litho3 settings based off a pre-inspection in which only default Litho3 values are needed. Upon completion of the pre-inspection, the images are then scanned and processed to extract the optimal Litho3 parameters that are largely dependent upon the feature size characteristics and local MEEF. Thus optimized Litho3 parameters can then be input into the recipe set up to enable a real-time inspection, as such fab user can timely access the defect criticality information for subsequent defect disposition. In the interest of printability validation, such defect information and associated coordinates can be passed onto defect review via XLINK for further analysis. Corresponding MEEF values are also available for all

  14. Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp

    NASA Astrophysics Data System (ADS)

    Murachi, Tetsunori; Amano, Tsuyoshi; Suzuki, Tomohiro; Miyai, Hiroki

    2014-04-01

    A major challenge for extreme ultraviolet lithography (EUVL) is avoiding defects in the fabrication of multilayered (ML) mask blanks. Substrate defects and adders during ML coating are responsible for ML defects which causes changes on phase and amplitude of EUV light. ML defects must be identified by inspection prior to absorber patterning in order to reduce the effects of ML defects via covering them with patterns to permit the use of fewer ML defect blanks. Fiducial marks (FMs) on ML blanks can be used for mask alignment and to accurately and precisely determine the locations of ML defects. In this study, we fabricated an FM mask by resist exposure using an e-beam writer and etching. Then, we inspected FMs and ML defects with an EUV actinic full-field mask blank inspection tool developed by EIDEC-LaserTec (LT ABI). Next, we evaluated the ML defect location accuracy on the mask based on FMs of several line depths by deriving center position of FMs and defects with Lorentz, Gaussian fitting and center-of-mass calculation. Here, we explain the estimation of defect location accuracy using FMs and the LT ABI, and discuss the defect numbers which can be covered by absorber patterns. Fewer than 19 defects per blank should be required for EUV blanks to cover ML defects with patterns.

  15. Lighting Studies for Fuelling Machine Deployed Visual Inspection Tool

    SciTech Connect

    Stoots, Carl; Griffith, George

    2015-04-01

    Under subcontract to James Fisher Nuclear, Ltd., INL has been reviewing advanced vision systems for inspection of graphite in high radiation, high temperature, and high pressure environments. INL has performed calculations and proof-of-principle measurements of optics and lighting techniques to be considered for visual inspection of graphite fuel channels in AGR reactors in UK.

  16. Optical fiber inspection system

    DOEpatents

    Moore, F.W.

    1985-04-05

    A remote optical inspection system including an inspection head. The inspection head has a passageway through which pellets or other objects are passed. A window is provided along the passageway through which light is beamed against the objects being inspected. A plurality of lens assemblies are arranged about the window so that reflected light can be gathered and transferred to a plurality of coherent optical fiber light guides. The light guides transfer the light images to a television or other image transducer which converts the optical images into a representative electronic signal. The electronic signal can then be displayed on a signal viewer such as a television monitor for inspection by a person. A staging means can be used to support the objects for viewing through the window. Routing means can be used to direct inspected objects into appropriate exit passages for accepted or rejected objects. The inspected objects are advantageously fed in a singular manner to the staging means and routing means. The inspection system is advantageously used in an enclosure when toxic or hazardous materials are being inspected. 10 figs.

  17. Optical fiber inspection system

    DOEpatents

    Moore, Francis W.

    1987-01-01

    A remote optical inspection system including an inspection head. The inspection head has a passageway through which pellets or other objects are passed. A window is provided along the passageway through which light is beamed against the objects being inspected. A plurality of lens assemblies are arranged about the window so that reflected light can be gathered and transferred to a plurality of coherent optical fiber light guides. The light guides transfer the light images to a television or other image transducer which converts the optical images into a representative electronic signal. The electronic signal can then be displayed on a signal viewer such as a television monitor for inspection by a person. A staging means can be used to support the objects for viewing through the window. Routing means can be used to direct inspected objects into appropriate exit passages for accepted or rejected objects. The inspected objects are advantageously fed in a singular manner to the staging means and routing means. The inspection system is advantageously used in an enclosure when toxic or hazardous materials are being inspected.

  18. Cargo container inspection test program at ARPA's Nonintrusive Inspection Technology Testbed

    NASA Astrophysics Data System (ADS)

    Volberding, Roy W.; Khan, Siraj M.

    1994-10-01

    An x-ray-based cargo inspection system test program is being conducted at the Advanced Research Project Agency (ARPA)-sponsored Nonintrusive Inspection Technology Testbed (NITT) located in the Port of Tacoma, Washington. The test program seeks to determine the performance that can be expected from a dual, high-energy x-ray cargo inspection system when inspecting ISO cargo containers. This paper describes an intensive, three-month, system test involving two independent test groups, one representing the criminal smuggling element and the other representing the law enforcement community. The first group, the `Red Team', prepares ISO containers for inspection at an off-site facility. An algorithm randomly selects and indicates the positions and preparation of cargoes within a container. The prepared container is dispatched to the NITT for inspection by the `Blue Team'. After in-gate processing, it is queued for examination. The Blue Team inspects the container and decides whether or not to pass the container. The shipment undergoes out-gate processing and returns to the Red Team. The results of the inspection are recorded for subsequent analysis. The test process, including its governing protocol, the cargoes, container preparation, the examination and results available at the time of submission are presented.

  19. Temporal processes in prime–mask interaction: Assessing perceptual consequences of masked information

    PubMed Central

    Scharlau, Ingrid

    2008-01-01

    Visual backward masking is frequently used to study the temporal dynamics of visual perception. These dynamics may include the temporal features of conscious percepts, as suggested, for instance, by the asynchronous–updating model (Neumann, 1982) and perceptual–retouch theory ((Bachmann, 1994). These models predict that the perceptual latency of a visual backward mask is shorter than that of a like reference stimulus that was not preceded by a masked stimulus. The prediction has been confirmed by studies using temporal–order judgments: For certain asynchronies between mask and reference stimulus, temporal–order reversals are quite frequent (e.g. Scharlau, & Neumann, 2003a). However, it may be argued that these reversals were due to a response bias in favour of the mask rather than true temporal-perceptual effects. I introduce two measures for assessing latency effects that (1) are not prone to such a response bias, (2) allow to quantify the latency gain, and (3) extend the perceptual evidence from order reversals to duration/interval perception, that is, demonstrate that the perceived interval between a mask and a reference stimulus may be shortened as well as prolonged by the presence of a masked stimulus. Consequences for theories of visual masking such as asynchronous–updating, perceptual–retouch, and reentrant models are discussed. PMID:20517512

  20. ASTER nighttime cloud mask database using MODIS cloud mask (MOD35) products

    NASA Astrophysics Data System (ADS)

    Tonooka, Hideyuki

    2008-10-01

    Cloud assessment for ASTER nighttime scenes is not accurate because the ASTER Cloud Coverage Assessment Algorithm (ACCAA) thresholds with only one thermal infrared (TIR) band for nighttime scenes. First in the present paper, it is shown that the original ACCAA cloud masks differ considerably from the masks interpolated from MODIS Cloud Mask Products (MOD35), and this discrepancy is caused from errors in the ACCAA masks by visual check for 543 scenes. In addition, uncertain pixels included in MOD35 masks, which are classified to neither cloud nor clear, are visually checked for 76 scenes. Then, the ASTER nighttime cloud mask database using MOD35 products is introduced. It provides the interpolated MOD35 cloud masks for almost all ASTER nighttime scenes (143,242 scenes as of July 2008) through Internet. The database also shows that clear scenes with cloud coverage of 20% or less are about 34% of the total nighttime scenes. In the final part of the paper, an algorithm for reclassifying an interpolated MOD35 mask using ASTER measurements is proposed and applied to 42 test scenes. The algorithm will work well for some scenes, but less well for snow/ice surfaces, and thin, cirrus, and high clouds, due to the band limitation of ASTER/TIR. If a spatial uniformity test is added, the algorithm performance may be improved.

  1. The Intervenor Effect in Masked Priming: How Does Masked Priming Survive across an Intervening Word?

    ERIC Educational Resources Information Center

    Forster, Kenneth I.

    2009-01-01

    Four masked priming experiments are reported investigating the effect of inserting an unrelated word between the masked prime and the target. When the intervening word is visible, identity priming is reduced to the level of one-letter-different form priming, but form priming is largely unaffected. However, when the intervening word is itself…

  2. Impact of mask line edge roughness and statistical noise on next generation mask making

    NASA Astrophysics Data System (ADS)

    Kim, Byung Gook; Choi, Jin; Lee, Sang Hee; Jeon, Chan Uk

    2012-06-01

    As extreme ultraviolet lithography (EUVL) moves toward high volume manufacturing and pushes to increasingly smaller critical dimensions, achieving the stringent requirements for line edge roughness (LER) is increasingly challenging. For the 22 nm half-pitch node and beyond, the International Roadmap for Semiconductors requires less than 1.6 nm of line width roughness (LWR) on the wafer. The major contributor of this tight LWR is wafer resist LER and mask LER. However, in current ITRS, there is no guideline for mask LER. While significant progress has been made to reduce the resist of the LER on the wafer, it is not yet clear how much the mask LER should be improved for a 22 nm half-pitch node application. Additionally, there are various approaches to obtaining a smaller LER on the mask. It could be improved either by reducing well-known statistical noise or manipulating some process condition or material. Both approaches are effective in improving the LER, however, they shows a different result in mask CD uniformity itself. In this paper, in addition to setting the criteria of the mask LER, we will discuss how tight the mask LER is required to be and what kind of approach is desirable with regards to the LER and CD uniformity. Finally, an analysis of the LER and CD variation provides some insights into the impact of the next generation mask infrastructure.

  3. Mask automation: need a revolution in mask makers and equipment industry

    NASA Astrophysics Data System (ADS)

    Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

    2013-09-01

    As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

  4. Engineering near-field focusing of a microsphere lens with pupil masks

    NASA Astrophysics Data System (ADS)

    Yan, Bing; Yue, Liyang; Wang, Zengbo

    2016-07-01

    Recent researches have shown small dielectric microspheres can perform as super-resolution lens to break optical diffraction limit for super-resolution applications. In this paper, we show for the first time that by combining a microsphere lens with a pupil mask, it is possible to precisely control the focusing properties of the lens, including the focusing spot size and focal length. Generally, the pupil mask can significantly reduce the spot size which means an improved resolution. The work is important for advancing microsphere-based super-resolution technologies, including fabrication and imaging.

  5. Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections

    NASA Astrophysics Data System (ADS)

    Wen, Vincent; Huang, L. R.; Lin, C. J.; Tseng, Y. N.; Huang, W. H.; Tuo, Laurent C.; Wylie, Mark; Chen, Ellison; Wang, Elvik; Glasser, Joshua; Kelkar, Amrish; Wu, David

    2015-10-01

    Die-to-die reticle inspections are among the simplest and most sensitive reticle inspections because of the use of an identical-design neighboring-die for the reference image. However, this inspection mode can have two key disadvantages: (1) The location of the defect is indeterminate because it is unclear to the inspector whether the test or reference image is defective; and (2) nuisance and false defects from mask manufacturing noise and tool optical variation can limit the usable sensitivity. The use of a new sequencing approach for a die-to-die inspection can resolve these issues without any additional scan time, without sacrifice in sensitivity requirement, and with a manageable increase in computation load. In this paper we explore another approach for die-to-die inspections using a new method of defect processing and sequencing. Utilizing die-to-die double arbitration during defect detection has been proven through extensive testing to generate accurate placement of the defect in the correct die to ensure efficient defect disposition at the AIMS step. The use of this method maintained the required inspection sensitivity for mask quality as verified with programmed-defectmask qualification and then further validated with production masks comparing the current inspection approach to the new method. Furthermore, this approach can significantly reduce the total number of defects that need to be reviewed by essentially eliminating the nuisance and false defects that can result from a die-to-die inspection. This "double-win" will significantly reduce the effort in classifying a die-to-die inspection result and will lead to improved cycle times.

  6. EUV mask process specifics and development challenges

    NASA Astrophysics Data System (ADS)

    Nesladek, Pavel

    2014-07-01

    EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed.

  7. Mask and lithography techniques for FPD

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Wahlsten, M.; Sundelin, E.; Hansson, G.; Svensson, A.

    2015-09-01

    Large-field projection lithography for FPDs has developed gradually since the 90s. The LCD screen technology has remained largely unchanged and incremental development has given us better image quality, larger screen sizes, and above all lower cost per area. Recently new types of mobile devices with very high pixel density and/or OLED displays have given rise to dramatically higher requirem ents on photomask technology. Devices with 600 ppi or m ore need lithography with higher optical resolution and better linewidth control. OLED di splays pose new challenges with high sensitivity to transistor parameters and to capacitive cross-talk. New mask requirements leads to new maskwriter requirements and Mycronic has developed a new generation of large -area mask writers with significantly improved properties. This paper discusses and shows data for the improved writers. Mask production to high er quality stan dards also need metrology to verify the quality and Mycronic has introduced a 2D metrology tool with accuracy adequate for current and future masks. New printing or additive methods of producing disp lays on plastic or metal foil will make low-cost disp lays available. This inexpensive type of disp lays will exist side by side with the photographic quality displays of TVs and mobile devices, which will continue to be a challenge in terms of mask and production quality.

  8. Calculating aerial images from EUV masks

    NASA Astrophysics Data System (ADS)

    Pistor, Thomas V.; Neureuther, Andrew R.

    1999-06-01

    Aerial images for line/space patterns, arrays of posts and an arbitrary layout pattern are calculated for EUV masks in a 4X EUV imaging system. Both mask parameters and illumination parameters are varied to investigate their effects on the aerial image. To facilitate this study, a parallel version of TEMPEST with a Fourier transform boundary condition was developed and run on a network of 24 microprocessors. Line width variations are observed when absorber thickness or sidewall angle changes. As the line/space pattern scales to smaller dimensions, the aspect ratios of the absorber features increase, introducing geometric shadowing and reducing aerial image intensity and contrast. 100nm square posts have circular images of diameter close to 100nm, but decreasing in diameter significantly when the corner round radius at the mask becomes greater than 50 nm. Exterior mask posts image slightly smaller and with higher ellipticity than interior mask posts. The aerial image of the arbitrary test pattern gives insight into the effects of the off-axis incidence employed in EUV lithography systems.

  9. Development of core technologies on EUV mask and resist for sub-20-nm half pitch generation

    NASA Astrophysics Data System (ADS)

    Inoue, Soichi; Amano, Tsuyoshi; Itani, Toshiro; Watanabe, Hidehiro; Mori, Ichiro; Watanabe, Takeo; Kinoshita, Hiroo; Miyai, Hiroki; Hatakeyama, Masahiro

    2012-09-01

    This paper reports on the current status for the key infrastructures of the extreme ultraviolet lithography (EUVL) for sub-20-nm half pitch (hp) generation. More specifically, the inspection technologies for EUV mask and resist-related technologies will be dedicatedly discussed. First, the actinic blank inspector is strongly required especially for sub-20-nm hp generation. The basic configuration of the prototyping tool will be presented. Second, the basic configuration of the newly developing patterned mask inspector (PMI) consisting of the projection-type optics for the electron beam (EB) will be presented. The primary challenge for the EUV resist is the concurrent improvements of resolution, line width roughness, sensitivity, and outgas. The basic performance of the EUV resist and preliminary validation of the outgas qualification for sub-20-nm hp will be presented.

  10. Fire Prevention Inspection Procedures.

    ERIC Educational Resources Information Center

    Pribyl, Paul F.

    Lesson plans are provided for a fire prevention inspection course of the Wisconsin Fire Service Training program. Objectives for the course are to enable students to describe and conduct fire prevention inspections, to identify and correct hazards common to most occupancies, to understand the types of building construction and occupancy, and to…

  11. Changing Classrooms through Inspection.

    ERIC Educational Resources Information Center

    Chapman, Christopher

    2001-01-01

    Reports findings from a preliminary study evaluating effects of the UK's Office for Standards in Education inspections on classroom change, based on teachers' perceptions, responses, and intentions to change practice (resulting from the inspection process) at five comprehensive secondary schools. School context and culture figure prominently.…

  12. Recent modelling advances for ultrasonic TOFD inspections

    SciTech Connect

    Darmon, Michel; Ferrand, Adrien; Dorval, Vincent; Chatillon, Sylvain; Lonné, Sébastien

    2015-03-31

    The ultrasonic TOFD (Time of Flight Diffraction) Technique is commonly used to detect and characterize disoriented cracks using their edge diffraction echoes. An overview of the models integrated in the CIVA software platform and devoted to TOFD simulation is presented. CIVA allows to predict diffraction echoes from complex 3D flaws using a PTD (Physical Theory of Diffraction) based model. Other dedicated developments have been added to simulate lateral waves in 3D on planar entry surfaces and in 2D on irregular surfaces by a ray approach. Calibration echoes from Side Drilled Holes (SDHs), specimen echoes and shadowing effects from flaws can also been modelled. Some examples of theoretical validation of the models are presented. In addition, experimental validations have been performed both on planar blocks containing calibration holes and various notches and also on a specimen with an irregular entry surface and allow to draw conclusions on the validity of all the developed models.

  13. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2009-04-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  14. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2008-10-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  15. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2009-03-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  16. Counteracting Power Analysis Attacks by Masking

    NASA Astrophysics Data System (ADS)

    Oswald, Elisabeth; Mangard, Stefan

    The publication of power analysis attacks [12] has triggered a lot of research activities. On the one hand these activities have been dedicated toward the development of secure and efficient countermeasures. On the other hand also new and improved attacks have been developed. In fact, there has been a continuous arms race between designers of countermeasures and attackers. This chapter provides a brief overview of the state-of-the art in the arms race in the context of a countermeasure called masking. Masking is a popular countermeasure that has been extensively discussed in the scientific community. Numerous articles have been published that explain different types of masking and that analyze weaknesses of this countermeasure.

  17. Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

    2008-03-01

    In the Hyper-NA immersion lithography regime, the electromagnetic response of the reticle is known to deviate in a complicated manner from the idealized Thin-Mask-like behavior. Already, this is driving certain RET choices, such as the use of polarized illumination and the customization of reticle film stacks. Unfortunately, full 3-D electromagnetic mask simulations are computationally intensive. And while OPC-compatible mask electromagnetic field (EMF) models can offer a reasonable tradeoff between speed and accuracy for full-chip OPC applications, full understanding of these complex physical effects demands higher accuracy. Our paper describes recent advances in leveraging High Performance Computing as a critical step towards lithographic modeling of the full manufacturing process. In this paper, highly accurate full 3-D electromagnetic simulation of very large mask layouts are conducted in parallel with reasonable turnaround time, using a Blue- Gene/L supercomputer and a Finite-Difference Time-Domain (FDTD) code developed internally within IBM. A 3-D simulation of a large 2-D layout spanning 5μm×5μm at the wafer plane (and thus (20μm×20μm×0.5μm at the mask) results in a simulation with roughly 12.5GB of memory (grid size of 10nm at the mask, single-precision computation, about 30 bytes/grid point). FDTD is flexible and easily parallelizable to enable full simulations of such large layout in approximately an hour using one BlueGene/L "midplane" containing 512 dual-processor nodes with 256MB of memory per processor. Our scaling studies on BlueGene/L demonstrate that simulations up to 100μm × 100μm at the mask can be computed in a few hours. Finally, we will show that the use of a subcell technique permits accurate simulation of features smaller than the grid discretization, thus improving on the tradeoff between computational complexity and simulation accuracy. We demonstrate the correlation of the real and quadrature components that comprise the

  18. Temperature rise of the mask-resist assembly during LIGA exposure.

    SciTech Connect

    Ting, Aili

    2004-11-01

    Deep X-ray lithography on PMMA resist is used in the LIGA process. The resist is exposed to synchrotron X-rays through a patterned mask and then is developed in a liquid developer to make high aspect ratio microstructures. The limitations in dimensional accuracies of the LIGA generated microstructure originate from many sources, including synchrotron and X-ray physics, thermal and mechanical properties of mask and resist, and from the kinetics of the developer. This work addresses the thermal analysis and temperature rise of the mask-resist assembly during exposure in air at the Advanced Light Source (ALS) synchrotron. The concern is that dimensional errors generated at the mask and the resist due to thermal expansion will lower the accuracy of the lithography. We have developed a three-dimensional finite-element model of the mask and resist assembly that includes a mask with absorber, a resist with substrate, three metal holders, and a water-cooling block. We employed the LIGA exposure-development software LEX-D to calculate volumetric heat sources generated in the assembly by X-ray absorption and the commercial software ABAQUS to calculate heat transfer including thermal conduction inside the assembly, natural and forced convection, and thermal radiation. at assembly outer and/or inner surfaces. The calculations of assembly maximum temperature. have been compared with temperature measurements conducted at ALS. In some of these experiments, additional cooling of the assembly was produced by forced nitrogen flow ('nitrogen jets') directed at the mask surface. The temperature rise in the silicon mask and the mask holder comes directly from the X-ray absorption, but nitrogen jets carry away a significant portion of heat energy from the mask surface, while natural convection carries away negligibly small amounts energy from the holder. The temperature rise in PMMA resist is mainly from heat conducted from the silicon substrate backward to the resist and from the inner

  19. An ERP indicator of processing relevant gestalts in masked priming.

    PubMed

    Verleger, Rolf; Görgen, Stefani; Jaśkowski, Piotr

    2005-11-01

    Briefly presented arrows, made indistinguishable by masks that contain arrows, inversely prime responses to following visible arrows. This inverse effect might reflect general regularities of masked priming or be either due to the task-relevant elements of the mask or to special features of arrows. Here we report a slow negative EEG potential recorded from the scalp above the visual cortex, which is evoked by masks that contain arrows. Even being evoked when arrows masks were presented in isolation, this "Nd-mask" appeared to be an obligatory response. Yet Nd-mask was enhanced when primes and targets were arrows and was reduced in the other cases, and even reversed its polarity with appropriate control stimuli. These findings provide support both for the special status of arrows and for the notion of mask relevance. Nd-mask might be one instance of negative EEG potentials evoked by stimuli with familiar gestalts. PMID:16364063

  20. Communication masking in marine mammals: A review and research strategy.

    PubMed

    Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

    2016-02-15

    Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. PMID:26707982

  1. Comparison of OPC job prioritization schemes to generate data for mask manufacturing

    NASA Astrophysics Data System (ADS)

    Lewis, Travis; Veeraraghavan, Vijay; Jantzen, Kenneth; Kim, Stephen; Park, Minyoung; Russell, Gordon; Simmons, Mark

    2015-03-01

    Delivering mask ready OPC corrected data to the mask shop on-time is critical for a foundry to meet the cycle time commitment for a new product. With current OPC compute resource sharing technology, different job scheduling algorithms are possible, such as, priority based resource allocation and fair share resource allocation. In order to maximize computer cluster efficiency, minimize the cost of the data processing and deliver data on schedule, the trade-offs of each scheduling algorithm need to be understood. Using actual production jobs, each of the scheduling algorithms will be tested in a production tape-out environment. Each scheduling algorithm will be judged on its ability to deliver data on schedule and the trade-offs associated with each method will be analyzed. It is now possible to introduce advance scheduling algorithms to the OPC data processing environment to meet the goals of on-time delivery of mask ready OPC data while maximizing efficiency and reducing cost.

  2. Study of lens heating behavior and thick mask effects with a computational method

    NASA Astrophysics Data System (ADS)

    Jia, Ningning; Yang, Seung-Hune; Kim, Sangwook; Choi, Jungdal

    2014-03-01

    Advances on techniques that enable small technology nodes printing benefit the lithography with cost. For instance, lens heating draws people's attention when the NTD process is applied together with the bright tone mask. And the study of it requires the investigation of many other variables. In this paper we examine individual impact of several closely related process variables to understand the lens heating behavior. Meanwhile, though it is known that the PTD process is less sensitive to the lens heating effect, we do observe mask topography induced best focus shifts among different patterns with small spaces. It is of interest to discover the extent to which the NTD is affected. Thus in this paper we also compared the two processes with respect to the mask topography effect by simulating the best focus shifts of a series of test patterens.

  3. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  4. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  5. Masked fake face detection using radiance measurements.

    PubMed

    Kim, Youngshin; Na, Jaekeun; Yoon, Seongbeak; Yi, Juneho

    2009-04-01

    This research presents a novel 2D feature space where real faces and masked fake faces can be effectively discriminated. We exploit the reflectance disparity based on albedo between real faces and fake materials. The feature vector used consists of radiance measurements of the forehead region under 850 and 685 nm illuminations. Facial skin and mask material show linearly separable distributions in the feature space proposed. By simply applying Fisher's linear discriminant, we have achieved 97.78% accuracy in fake face detection. Our method can be easily implemented in commercial face verification systems. PMID:19340250

  6. Robust speech recognition from binary masks.

    PubMed

    Narayanan, Arun; Wang, DeLiang

    2010-11-01

    Inspired by recent evidence that a binary pattern may provide sufficient information for human speech recognition, this letter proposes a fundamentally different approach to robust automatic speech recognition. Specifically, recognition is performed by classifying binary masks corresponding to a word utterance. The proposed method is evaluated using a subset of the TIDigits corpus to perform isolated digit recognition. Despite dramatic reduction of speech information encoded in a binary mask, the proposed system performs surprisingly well. The system is compared with a traditional HMM based approach and is shown to perform well under low SNR conditions. PMID:21110529

  7. Free electron laser with masked chicane

    DOEpatents

    Nguyen, Dinh C.; Carlsten, Bruce E.

    1999-01-01

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  8. Carbon contamination topography analysis of EUV masks

    SciTech Connect

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  9. Compensation of overlay errors due to mask bending and non-flatness for EUV masks

    NASA Astrophysics Data System (ADS)

    Chandhok, Manish; Goyal, Sanjay; Carson, Steven; Park, Seh-Jin; Zhang, Guojing; Myers, Alan M.; Leeson, Michael L.; Kamna, Marilyn; Martinez, Fabian C.; Stivers, Alan R.; Lorusso, Gian F.; Hermans, Jan; Hendrickx, Eric; Govindjee, Sanjay; Brandstetter, Gerd; Laursen, Tod

    2009-03-01

    EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budget. In addition, due to multilayer and other thin film induced stresses, EUV masks have severe bow (~1 um PV). Since there is no electrostatic chuck to flatten the mask during the e-beam write step, EUV masks are written in a bent state that can result in ~15 nm of overlay error. In this article we present the use of physically-based models of mask bending and non-flatness induced overlay errors, to compensate for pattern placement of EUV masks during the e-beam write step in a process we refer to as E-beam Writer based Overlay error Correction (EWOC). This work could result in less restrictive tolerances for the mask blank non-flatness specs which in turn would result in less blank defects.

  10. An innovative Source-Mask co-Optimization (SMO) method for extending low k1 imaging

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen; Chen, Luoqi; Li, Zhipan; Park, Sean; Gronlund, Keith; Liu, Hua-Yu; Callan, Neal; Socha, Robert; Hansen, Steve

    2008-11-01

    The optimization of the source topology and mask design [1,2] is vital to future advanced ArF technology node development. In this study, we report the comparison of an iterative optimization method versus a newly developed simultaneous source-mask optimization approach. In the iterative method, the source is first optimized based on normalized image log slopes (NILS), taking into account the ASML scanner's diffractive optical element (DOE) manufacturability constraints. Assist features (AFs) are placed under the optimized source, and then optical proximity correction (OPC) is performed using the already placed AFs, in the last step the source is re-optimized using the OPC-ed layout with the AFs. The source is then optimized using the layout from the previous stage based on a set of user specified cost function. The new approach first co-optimizes a pixelated freeform source and a continuous transmission gray tone mask based on edge placement error (EPE) based cost function. ASML scanner specific constraints are applied to the optimized source, to match ASML's current and future illuminator capabilities. Next, AF "seeds" are identified from the optimized gray tone mask, which are subsequently co-optimized with the main features to meet the process window and mask error factor requirement. The results show that the new method offers significant process window improvement.

  11. Cosmic Ballet or Devil's Mask?

    NASA Astrophysics Data System (ADS)

    2004-04-01

    Stars like our Sun are members of galaxies, and most galaxies are themselves members of clusters of galaxies. In these, they move around among each other in a mostly slow and graceful ballet. But every now and then, two or more of the members may get too close for comfort - the movements become hectic, sometimes indeed dramatic, as when galaxies end up colliding. ESO PR Photo 12/04 shows an example of such a cosmic tango. This is the superb triple system NGC 6769-71, located in the southern Pavo constellation (the Peacock) at a distance of 190 million light-years. This composite image was obtained on April 1, 2004, the day of the Fifth Anniversary of ESO's Very Large Telescope (VLT). It was taken in the imaging mode of the VIsible Multi-Object Spectrograph (VIMOS) on Melipal, one of the four 8.2-m Unit Telescopes of the VLT at the Paranal Observatory (Chile). The two upper galaxies, NGC 6769 (upper right) and NGC 6770 (upper left), are of equal brightness and size, while NGC 6771 (below) is about half as bright and slightly smaller. All three galaxies possess a central bulge of similar brightness. They consist of elderly, reddish stars and that of NGC 6771 is remarkable for its "boxy" shape, a rare occurrence among galaxies. Gravitational interaction in a small galaxy group NGC 6769 is a spiral galaxy with very tightly wound spiral arms, while NGC 6770 has two major spiral arms, one of which is rather straight and points towards the outer disc of NGC 6769. NGC 6770 is also peculiar in that it presents two comparatively straight dark lanes and a fainter arc that curves towards the third galaxy, NGC 6771 (below). It is also obvious from this new VLT photo that stars and gas have been stripped off NGC 6769 and NGC 6770, starting to form a common envelope around them, in the shape of a Devil's Mask. There is also a weak hint of a tenuous bridge between NGC 6769 and NGC 6771. All of these features testify to strong gravitational interaction between the three galaxies

  12. Are Masking-Based Models of Risk Useful?

    PubMed

    Gisiner, Robert C

    2016-01-01

    As our understanding of directly observable effects from anthropogenic sound exposure has improved, concern about "unobservable" effects such as stress and masking have received greater attention. Equal energy models of masking such as power spectrum models have the appeal of simplicity, but do they offer biologically realistic assessments of the risk of masking? Data relevant to masking such as critical ratios, critical bandwidths, temporal resolution, and directional resolution along with what is known about general mammalian antimasking mechanisms all argue for a much more complicated view of masking when making decisions about the risk of masking inherent in a given anthropogenic sound exposure scenario. PMID:26610979

  13. Influence of auditory fatigue on masked pure-tone thresholds

    NASA Technical Reports Server (NTRS)

    Parker, D. E.; Tubbs, R. L.; Johnston, P. A.; Johnston, L. S.

    1976-01-01

    A description is presented of four related experiments involving conditions of 3-kHz low-intensity masking, a replication of experiment I with slight variations, 3-kHz high-intensity masking, and 6-kHz low-intensity masking. The frequencies of the tones which the observers detected were 3 and 6 kHz. The observed change in masked-tone threshold as a function of fatigue is discussed. It is found that masked-tone-detection thresholds remain essentially unchanged following fatigue if the masking-noise intensity is sufficiently great.

  14. Process-window sensitive full-chip inspection for design-to-silicon optimization in the sub-wavelength era

    NASA Astrophysics Data System (ADS)

    Brodsky, Mary Jane; Halle, Scott; Jophlin-Gut, Vickie; Liebmann, Lars; Samuels, Don; Crispo, Gary; Nafisi, Kourosh; Ramani, Vijay; Peterson, Ingrid

    2005-05-01

    As lithographers continue to implement more exotic and complex Resolution Enhancement Techniques (RET) to push patterning further beyond the physical limits of optical lithography, full-chip brightfield inspections are be-coming increasingly valuable to help identify random and systematic defects that occur due to mask tolerance ex-cursions, OPC inaccuracies, RET design errors, or unmanufacturable layout configurations. PWQ, or Process Window Qualification, is a KLA-Tencor product* using brightfield imaging inspection technology that has been developed to address the need for rapid full-chip process window verification. PWQ is currently implemented at IBM"s 300mm facility and is being used to isolate features that repeatedly fail as a function of exposure dose and focus errors. We will demonstrate how PWQ results have assisted in: 1) qualification of reticles and new OPC models; 2) identification of non-obvious lithographic features that limit common process windows; 3) providing input for long-term design for manufacturability (DfM), OPC, and/or RET modeling. PWQ allows full or partial chips to be scanned in far less time than a multi-point common process window collected on a SEM. PWQ findings supplement these traditional analysis methods by encompassing all features on a chip, providing more detail on where the process window truly lies. Examples of marginal features that were detected by PWQ methods and their subsequent actions will be discussed in this paper for an advanced 65nm and a 90nm CMOS process.

  15. Particle removal challenges with EUV patterned mask for the sub-22nm HP node

    SciTech Connect

    Rastegar, A.; Eichenlaub, S.; Kadaksham, A. J.; Lee, B.; House, M.; Huh, S.; Cha, B.; Yun, H.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm{sup 2} did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes {ge}50 nm SiO{sub 2} particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove {ge}28 nm SiO{sub 2} particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O{sub 2} during a vacuum ultraviolet (VUV) ({lambda} = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO{sub 2} particles. 28 nm SiO{sub 2} particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO{sub 2} particles on top of the EUV mask will be printed on the wafer.

  16. Investigating printability of native defects on EUV mask blanks through simulations and experiments

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Herbol, Henry; Jang, Il-Yong; Kwon, Hyuk Joo; Harris-Jones, Jenah; Denbeaux, Gregory

    2014-04-01

    Availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the defect printability as well as the fundamental aspects of a defect that result in the defects being printed. In this work, the native mask blank defects were characterized using atomic force microscopy (AFM) and cross-section transmission electron microscopy (TEM), and the defect printability of the characterized native mask defects was evaluated using finite-difference time-domain (FDTD) simulations. The simulation results were compared with the through-focus aerial images obtained at the SEMATECH Actinic Inspection Tool (AIT) at Lawrence Berkeley National Lab (LBNL) for the characterized defects. There was a reasonable agreement between the through-focus FDTD simulation results and the AIT results. To model the Mo/Si multilayer growth over the native defects, which served as the input for the FDTD simulations, a level-set technique was used to predict the evolution of the multilayer disruption over the defect. Unlike other models that assume a constant flux of atoms (of materials to be deposited) coming from a single direction, this model took into account the direction and incident fluxes of the materials to be deposited, as well as the rotation of the mask substrate, to accurately simulate the actual deposition conditions. The modeled multilayer growth was compared with the cross-section TEM images, and a good agreement was observed between them.

  17. Optimal Phase Masks for High Contrast Imaging Applications

    NASA Astrophysics Data System (ADS)

    Ruane, Garreth J.

    Phase-only optical elements can provide a number of important functions for high-contrast imaging. This thesis presents analytical and numerical optical design methods for accomplishing specific tasks, the most significant of which is the precise suppression of light from a distant point source. Instruments designed for this purpose are known as coronagraphs. Here, advanced coronagraph designs are presented that offer improved theoretical performance in comparison to the current state-of-the-art. Applications of these systems include the direct imaging and characterization of exoplanets and circumstellar disks with high sensitivity. Several new coronagraph designs are introduced and, in some cases, experimental support is provided. In addition, two novel high-contrast imaging applications are discussed: the measurement of sub-resolution information using coronagraphic optics and the protection of sensors from laser damage. The former is based on experimental measurements of the sensitivity of a coronagraph to source displacement. The latter discussion presents the current state of ongoing theoretical work. Beyond the mentioned applications, the main outcome of this thesis is a generalized theory for the design of optical systems with one of more phase masks that provide precise control of radiation over a large dynamic range, which is relevant in various high-contrast imaging scenarios. The optimal phase masks depend on the necessary tasks, the maximum number of optics, and application specific performance measures. The challenges and future prospects of this work are discussed in detail.

  18. Adaptation to different noninvasive ventilation masks in critically ill patients*

    PubMed Central

    da Silva, Renata Matos; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

    2013-01-01

    OBJECTIVE: To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. METHODS: An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. RESULTS: We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. CONCLUSIONS: In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed. PMID:24068269

  19. Real time validation of GPS TEC precursor mask for Greece

    NASA Astrophysics Data System (ADS)

    Pulinets, Sergey; Davidenko, Dmitry

    2013-04-01

    them the mask confirmed its validity and 6 of December event was predicted in advance.

  20. Mask cycle time reduction for foundry projects

    NASA Astrophysics Data System (ADS)

    Balasinski, A.

    2011-11-01

    One of key deliverables of foundry based manufacturing is low cycletime. Building new and enhancing existing products by mask changes involves significant logistical effort, which could be reduced by standardizing data management and communication procedures among design house, mask shop, and foundry (fab) [1]. As an example, a typical process of taping out can take up to two weeks in addition to technical effort, for database handling, mask form completion, management approval, PO signoff and JDV review, translating into loss of revenue. In order to reduce this delay, we are proposing to develop a unified online system which should assist with the following functions: database edits, final verifications, document approvals, mask order entries, and JDV review with engineering signoff as required. This would help a growing number of semiconductor products to be flexibly manufactured at different manufacturing sites. We discuss how the data architecture based on a non-relational database management system (NRDMBS) extracted into a relational one (RDMBS) should provide quality information [2], to reduce cycle time significantly beyond 70% for an example 2 week tapeout schedule.