Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

NASA Astrophysics Data System (ADS)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Radiation effects in advanced microelectronics technologies

NASA Astrophysics Data System (ADS)

Johnston, A. H.

1998-06-01

The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.

Nanocharacterization Challenges in a Changing Microelectronics Landscape

NASA Astrophysics Data System (ADS)

Brilloüt, Michel

2011-11-01

As the microelectronics industry enters the "nano"-era new challenges emerge. Traditional scaling of the MOS transistor faces major obstacles in fulfilling "Moore's law". New features like strain and new materials (e.g. high k—metal gate stack) are introduced in order to sustain performance increases. For a better electrostatic control, devices will use the third dimension, e.g., in gate-all-around nanowire structures. Due to the escalating cost and complexity of sub-28 nm technologies fewer industrial players can afford the development and production of advanced CMOS processes and many companies acknowledge the fact that the value in products can also be obtained in using more diversified non-digital technologies (the so-called "More-than-Moore" domain). This evolving landscape brings new requirements—discussed in this paper—in terms of physical characterization of technologies and devices.

A Methodology to Teach Advanced A/D Converters, Combining Digital Signal Processing and Microelectronics Perspectives

ERIC Educational Resources Information Center

Quintans, C.; Colmenar, A.; Castro, M.; Moure, M. J.; Mandado, E.

2010-01-01

ADCs (analog-to-digital converters), especially Pipeline and Sigma-Delta converters, are designed using complex architectures in order to increase their sampling rate and/or resolution. Consequently, the learning of ADC devices also encompasses complex concepts such as multistage synchronization, latency, oversampling, modulation, noise shaping,…

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics.

PubMed

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

NASA Astrophysics Data System (ADS)

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

NASA SBIR product catalog, 1991

NASA Technical Reports Server (NTRS)

1991-01-01

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

NASA Astrophysics Data System (ADS)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

REVIEW ARTICLE: How will physics be involved in silicon microelectronics

NASA Astrophysics Data System (ADS)

Kamarinos, Georges; Felix, Pierre

1996-03-01

By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

Electric Field Distortion in Electro-Optical Devices Subjected to Ionizing Radiation.

DTIC Science & Technology

1983-12-26

applies- ties of scientif ic advances to nam military spae system . Versatilty and flaxibility hews beon developed to a high degree by the lehoratory...personel In deeling with the many problems encountered ina the nation’s rapidly dsvelopnas space system . 1expertise In the latest scientific developments is...desiga, distributed architectures for spacoerne m o putars, fault-tolerant c.speter system , artificia intelligence. end microelectronics applications

Fully integrated biochip platforms for advanced healthcare.

PubMed

Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

2012-01-01

Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications.

Fully Integrated Biochip Platforms for Advanced Healthcare

PubMed Central

Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

2012-01-01

Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications. PMID:23112644

Insinuating electronics in the brain.

PubMed

Hughes, Mark A

2016-08-01

There is an expanding interface between electronic engineering and neurosurgery. Rapid advances in microelectronics and materials science, driven largely by consumer demand, are inspiring and accelerating development of a new generation of diagnostic, therapeutic, and prosthetic devices for implantation in the nervous system. This paper reviews some of the basic science underpinning their development and outlines some opportunities and challenges for their use in neurosurgery. Copyright © 2016 The Author. Published by Elsevier Ltd.. All rights reserved.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Printing of microstructure strain sensor for structural health monitoring

NASA Astrophysics Data System (ADS)

Le, Minh Quyen; Ganet, Florent; Audigier, David; Capsal, Jean-Fabien; Cottinet, Pierre-Jean

2017-05-01

Recent advances in microelectronics and materials should allow the development of integrated sensors with transduction properties compatible with being printed directly onto a 3D substrate, especially metallic and polymer substrates. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated in ink, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we report on these strategies and demonstrate the potential of 3D-printed microelectronics based on a structural health monitoring (SHM) application for the precision weapon systems. We show that our printed sensors can be employed in non-invasive, high-fidelity and continuous strain monitoring of handguns, making it possible to implement printed sensors on a 3D substrate in either SHM or remote diagnostics. We propose routes to commercialization and novel device opportunities and highlight the remaining challenges for research.

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Using SDI-12 with ST microelectronics MCU's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saari, Alexandra; Hinzey, Shawn Adrian; Frigo, Janette Rose

2015-09-03

ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics

DOEpatents

Maxwell, James L; Rose, Chris R; Black, Marcie R; Springer, Robert W

2014-03-11

Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.

Strategic Computing. New-Generation Computing Technology: A Strategic Plan for Its Development and Application to Critical Problems in Defense

DTIC Science & Technology

1983-10-28

Computing. By seizing an opportunity to leverage recent advances in artificial intelligence, computer science, and microelectronics, the Agency plans...occurred in many separated areas of artificial intelligence, computer science, and microelectronics. Advances in "expert system" technology now...and expert knowledge o Advances in Artificial Intelligence: Mechanization of speech recognition, vision, and natural language understanding. o

Nanostructured Materials Development for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Landi, B. J.; Elich, J. B.; Gennett, T.; Castro, S. L.; Bailey, Sheila G.; Hepp, Aloysius F.

2003-01-01

There have been many recent advances in the use of nanostructured materials for space power applications. In particular, the use of high purity single wall nanotubes holds promise for a variety of generation and storage devices including: thin film lithium ion batteries, microelectronic proton exchange membrane (PEM) fuel cells, polymeric thin film solar cells, and thermionic power supplies is presented. Semiconducting quantum dots alone and in conjunction with carbon nanotubes are also being investigated for possible use in high efficiency photovoltaic solar cells. This paper will review some of the work being done at RIT in conjunction with the NASA Glenn Research Center to utilize nanomaterials in space power devices.

Method of fabricating a microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

A method of fabricating a microelectronic device package with an integral window for providing optical access through an aperture in the package. The package is made of a multilayered insulating material, e.g., a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC). The window is inserted in-between personalized layers of ceramic green tape during stackup and registration. Then, during baking and firing, the integral window is simultaneously bonded to the sintered ceramic layers of the densified package. Next, the microelectronic device is flip-chip bonded to cofired thick-film metallized traces on the package, where the light-sensitive side is optically accessible through the window. Finally, a cover lid is attached to the opposite side of the package. The result is a compact, low-profile package, flip-chip bonded, hermetically-sealed package having an integral window.

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

ERIC Educational Resources Information Center

Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

2014-01-01

Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Photopolymerizable liquid encapsulants for microelectronic devices

NASA Astrophysics Data System (ADS)

Baikerikar, Kiran K.

2000-10-01

Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion of a thermal initiator on the thermal and mechanical properties of the final cured encapsulants have been investigated. The results show that the material properties of the PLEs are the same, if not better, than those exhibited by conventional transfer molding compounds and demonstrate the potential of using PLEs for encapsulating microelectronic devices.

Self-Assembly of Nanostructured Electronic Devices (454th Brookhaven Lecture)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Charles

2009-12-16

Given suitable atmospheric conditions, water vapor from the air will crystallize into beautiful structures: snowflakes. Nature provides many other examples of spontaneous organization of materials into regular patterns, which is a process known as self-assembly. Since self-assembly works at all levels, it can be a useful tool for organizing materials on the nanometer scale. In particular, self-assembly provides a precise method for designing materials with improved electronic properties, thereby enabling advances in semiconductor electronics and solar devices. On Wednesday, December 16, at 4 p.m. in Berkner Hall, Charles Black of the Center for Functional Nanomaterials (CFN) will explore this topicmore » during the 454th Brookhaven Lecture, entitled “Self-Assembly of Nanostructured Electronic Devices.” Refreshments will be offered before and after the lecture. To attend this open-to-the-public event, visitors to the Lab ages 16 and older must present photo ID at the Main Gate. During this talk, Dr. Black will discuss examples of how self-assembly is being integrated into semiconductor microelectronics, as advances in the ability to define circuit elements at higher resolution have fueled more than 40 years of performance improvements. Self-assembly also promises advances in the performance of solar devices; thus he will describe his group’s recent results with nanostructured photovoltaic devices.« less

MEMS Using SOI Substrate

NASA Technical Reports Server (NTRS)

Tang, Tony K.

1999-01-01

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

Retinal Implants for Blind Patients

NASA Astrophysics Data System (ADS)

Rothermel, Albrecht

Recently, very promising results have been obtained in clinical trials with eye-prostheses for the blind. There is a chance that advances in surgical techniques, microelectronics design, and material science may lead to the first really useful applications of retinal implants in the near future. This chapter will focus on the actual status of subretinal surgery and implant technologies. Opportunities and limitations of the different technologies will be discussed in terms of patients benefit and technological challenges. Finally, a vision on how the devices may work and look like in the future will be given.

Micro-Scale Avionics Thermal Management

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

Trends in the thermal management of avionics and commercial ground-based microelectronics are converging, and facing the same dilemma: a shortfall in technology to meet near-term maximum junction temperature and package power projections. Micro-scale devices hold the key to significant advances in thermal management, particularly micro-refrigerators/coolers that can drive cooling temperatures below ambient. A microelectromechanical system (MEMS) Stirling cooler is currently under development at the NASA Glenn Research Center to meet this challenge with predicted efficiencies that are an order of magnitude better than current and future thermoelectric coolers.

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Fighting blindness with microelectronics.

PubMed

Zrenner, Eberhart

2013-11-06

There is no approved cure for blindness caused by degeneration of the photoreceptor cells of the retina. However, there has been encouraging progress with attempts to restore vision using microelectronic retinal implant devices. Yet many questions remain to be addressed. Where is the best location to implant multielectrode arrays? How can spatial and temporal resolution be improved? What are the best ways to ensure the safety and longevity of these devices? Will color vision be possible? This Perspective discusses the current state of the art of retinal implants and attempts to address some of the outstanding questions.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

NASA Astrophysics Data System (ADS)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radchenko, I.; Tippabhotla, S. K.; Tamura, N.

2016-10-21

Synchrotron x-ray microdiffraction (μXRD) allows characterization of a crystalline material in small, localized volumes. Phase composition, crystal orientation and strain can all be probed in few-second time scales. Crystalline changes over a large areas can be also probed in a reasonable amount of time with submicron spatial resolution. However, despite all the listed capabilities, μXRD is mostly used to study pure materials but its application in actual device characterization is rather limited. This article will explore the recent developments of the μXRD technique illustrated with its advanced applications in microelectronic devices and solar photovoltaic systems. Application of μXRD in microelectronicsmore » will be illustrated by studying stress and microstructure evolution in Cu TSV (through silicon via) during and after annealing. Here, the approach allowing study of the microstructural evolution in the solder joint of crystalline Si solar cells due to thermal cycling will be also demonstrated.« less

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Scalable fabrication of carbon-based MEMS/NEMS and their applications: a review

NASA Astrophysics Data System (ADS)

Jiang, Shulan; Shi, Tielin; Zhan, Xiaobin; Xi, Shuang; Long, Hu; Gong, Bo; Li, Junjie; Cheng, Siyi; Huang, Yuanyuan; Tang, Zirong

2015-11-01

The carbon-based micro/nano electromechanical system (MEMS/NEMS) technique provides a powerful approach to large-scale manufacture of high-aspect-ratio carbon structures for wafer-level processing. The fabricated three-dimensional (3D) carbon structures have the advantages of excellent electrical and electrochemical properties, and superior biocompatibility. In order to improve their performance for applications in micro energy storage devices and microsensors, an increase in the footprint surface area is of great importance. Various approaches have been proposed for fabricating large surface area carbon-based structures, including the integration of nanostructures such as carbon nanotubes (CNTs), graphene, nanowires, nanofilms and nanowrinkles onto 3D structures, which has been proved to be effective and productive. Moreover, by etching the 3D photoresist microstructures through oxygen plasma or modifying the photoresist with specific materials which can be etched in the following pyrolysis process, micro/nano hierarchical carbon structures have been fabricated. These improved structures show excellent performance in various applications, especially in the fields of biological sensors, surface-enhanced Raman scattering, and energy storage devices such as micro-supercapacitors and fuel cells. With the rapid development of microelectronic devices, the carbon-based MEMS/NEMS technique could make more aggressive moves into microelectronics, sensors, miniaturized power systems, etc. In this review, the recent advances in the fabrication of micro/nano hierarchical carbon-based structures are introduced and the technical challenges and future outlook of the carbon-based MEMS/NEMS techniques are also analyzed.

Channel add-drop filter based on dual photonic crystal cavities in push-pull mode.

PubMed

Poulton, Christopher V; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2015-09-15

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process (IBM 45 nm SOI) without any foundry process modifications. The filter shows 1 dB of insertion loss in the drop port with a 3 dB bandwidth of 64 GHz, and 16 dB extinction in the through port. To the best of our knowledge, this is the first implementation of a port-separating, add-drop filter based on standing wave cavities coupled to conventional waveguides, and demonstrates a performance that suggests potential for photonic crystal devices within optical immersion lithography-based advanced CMOS electronics-photonics integration.

Nanophotonic applications for silicon-on-insulator (SOI)

NASA Astrophysics Data System (ADS)

de la Houssaye, Paul R.; Russell, Stephen D.; Shimabukuro, Randy L.

2004-07-01

Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

UVPROM dosimetry, microdosimetry and applications to SEU and extreme value theory

NASA Astrophysics Data System (ADS)

Scheick, Leif Zebediah

A new method is described for characterizing a device in terms of the statistical distribution of first failures. The method is based on the erasure of a commercial Ultra- Violet erasable Programmable Read Only Memory (UVPROM). The method of readout would be used on a spacecraft or in other restrictive radiation environments. The measurement of the charge remaining on the floating gate is used to determine absorbed dose. The method of determining dose does not require the detector to be destroyed or erased nor does it effect the ability for taking further measurements. This is compared to extreme value theory applied to the statistical distributions that apply to this device. This technique predicts the threshold of Single Event Effects (SEE), like anomalous changes in erasure time in programmable devices due to high microdose energy-deposition events. This technique also allows for advanced non-destructive, screening of a single microelectronic devices for predictable response in a stressful, i.e. radiation, environments.

Overview of Micro- and Nano-Technology Tools for Stem Cell Applications: Micropatterned and Microelectronic Devices

PubMed Central

Cagnin, Stefano; Cimetta, Elisa; Guiducci, Carlotta; Martini, Paolo; Lanfranchi, Gerolamo

2012-01-01

In the past few decades the scientific community has been recognizing the paramount role of the cell microenvironment in determining cell behavior. In parallel, the study of human stem cells for their potential therapeutic applications has been progressing constantly. The use of advanced technologies, enabling one to mimic the in vivo stem cell microenviroment and to study stem cell physiology and physio-pathology, in settings that better predict human cell biology, is becoming the object of much research effort. In this review we will detail the most relevant and recent advances in the field of biosensors and micro- and nano-technologies in general, highlighting advantages and disadvantages. Particular attention will be devoted to those applications employing stem cells as a sensing element. PMID:23202240

Overview of micro- and nano-technology tools for stem cell applications: micropatterned and microelectronic devices.

PubMed

Cagnin, Stefano; Cimetta, Elisa; Guiducci, Carlotta; Martini, Paolo; Lanfranchi, Gerolamo

2012-11-19

In the past few decades the scientific community has been recognizing the paramount role of the cell microenvironment in determining cell behavior. In parallel, the study of human stem cells for their potential therapeutic applications has been progressing constantly. The use of advanced technologies, enabling one to mimic the in vivo stem cell microenviroment and to study stem cell physiology and physio-pathology, in settings that better predict human cell biology, is becoming the object of much research effort. In this review we will detail the most relevant and recent advances in the field of biosensors and micro- and nano-technologies in general, highlighting advantages and disadvantages. Particular attention will be devoted to those applications employing stem cells as a sensing element.

Optimization of Microelectronic Devices for Sensor Applications

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

2000-01-01

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

NASA Technical Reports Server (NTRS)

Koontz, Steve; Boeder, Paul; Reddell, Brandon

2009-01-01

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

Electrical stimulation of the brain and the development of cortical visual prostheses: An historical perspective.

PubMed

Lewis, Philip M; Rosenfeld, Jeffrey V

2016-01-01

Rapid advances are occurring in neural engineering, bionics and the brain-computer interface. These milestones have been underpinned by staggering advances in micro-electronics, computing, and wireless technology in the last three decades. Several cortically-based visual prosthetic devices are currently being developed, but pioneering advances with early implants were achieved by Brindley followed by Dobelle in the 1960s and 1970s. We have reviewed these discoveries within the historical context of the medical uses of electricity including attempts to cure blindness, the discovery of the visual cortex, and opportunities for cortex stimulation experiments during neurosurgery. Further advances were made possible with improvements in electrode design, greater understanding of cortical electrophysiology and miniaturisation of electronic components. Human trials of a new generation of prototype cortical visual prostheses for the blind are imminent. This article is part of a Special Issue entitled Hold Item. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J [Knoxville, TN; Bryan, William Louis [Knoxville, TN; Kress, Reid [Oak Ridge, TN

2003-05-27

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J.; Bryan, William Louis; Kress, Reid

2003-09-30

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Tutorial: Determination of thermal boundary resistance by molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Liang, Zhi; Hu, Ming

2018-05-01

Due to the high surface-to-volume ratio of nanostructured components in microelectronics and other advanced devices, the thermal resistance at material interfaces can strongly affect the overall thermal behavior in these devices. Therefore, the thermal boundary resistance, R, must be taken into account in the thermal analysis of nanoscale structures and devices. This article is a tutorial on the determination of R and the analysis of interfacial thermal transport via molecular dynamics (MD) simulations. In addition to reviewing the commonly used equilibrium and non-equilibrium MD models for the determination of R, we also discuss several MD simulation methods which can be used to understand interfacial thermal transport behavior. To illustrate how these MD models work for various interfaces, we will show several examples of MD simulation results on thermal transport across solid-solid, solid-liquid, and solid-gas interfaces. The advantages and drawbacks of a few other MD models such as approach-to-equilibrium MD and first-principles MD are also discussed.

Encapsulation methods for organic electrical devices

DOEpatents

Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

2013-06-18

The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

A Reliability Simulator for Radiation-Hard Microelectronics Development

DTIC Science & Technology

1991-07-01

1 3.0 PHASE II WORK PLANS ................................................................ 2... plan . The correlation experimental details including the devices utilized, the hot-carrier stressing and the wafer-level radiation correlation procedure...channel devices, and a new lifetime extrapolation method is demonstrated for p-channel devices. 3.0 PHASE II WORK PLANS The Phase 1I program consisted of

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

Listening to Brain Microcircuits for Interfacing With External World—Progress in Wireless Implantable Microelectronic Neuroengineering Devices

PubMed Central

Nurmikko, Arto V.; Donoghue, John P.; Hochberg, Leigh R.; Patterson, William R.; Song, Yoon-Kyu; Bull, Christopher W.; Borton, David A.; Laiwalla, Farah; Park, Sunmee; Ming, Yin; Aceros, Juan

2011-01-01

Acquiring neural signals at high spatial and temporal resolution directly from brain microcircuits and decoding their activity to interpret commands and/or prior planning activity, such as motion of an arm or a leg, is a prime goal of modern neurotechnology. Its practical aims include assistive devices for subjects whose normal neural information pathways are not functioning due to physical damage or disease. On the fundamental side, researchers are striving to decipher the code of multiple neural microcircuits which collectively make up nature’s amazing computing machine, the brain. By implanting biocompatible neural sensor probes directly into the brain, in the form of microelectrode arrays, it is now possible to extract information from interacting populations of neural cells with spatial and temporal resolution at the single cell level. With parallel advances in application of statistical and mathematical techniques tools for deciphering the neural code, extracted populations or correlated neurons, significant understanding has been achieved of those brain commands that control, e.g., the motion of an arm in a primate (monkey or a human subject). These developments are accelerating the work on neural prosthetics where brain derived signals may be employed to bypass, e.g., an injured spinal cord. One key element in achieving the goals for practical and versatile neural prostheses is the development of fully implantable wireless microelectronic “brain-interfaces” within the body, a point of special emphasis of this paper. PMID:21654935

Imaging of nonlocal hot-electron energy dissipation via shot noise.

PubMed

Weng, Qianchun; Komiyama, Susumu; Yang, Le; An, Zhenghua; Chen, Pingping; Biehs, Svend-Age; Kajihara, Yusuke; Lu, Wei

2018-05-18

In modern microelectronic devices, hot electrons accelerate, scatter, and dissipate energy in nanoscale dimensions. Despite recent progress in nanothermometry, direct real-space mapping of hot-electron energy dissipation is challenging because existing techniques are restricted to probing the lattice rather than the electrons. We realize electronic nanothermometry by measuring local current fluctuations, or shot noise, associated with ultrafast hot-electron kinetic processes (~21 terahertz). Exploiting a scanning and contact-free tungsten tip as a local noise probe, we directly visualize hot-electron distributions before their thermal equilibration with the host gallium arsenide/aluminium gallium arsenide crystal lattice. With nanoconstriction devices, we reveal unexpected nonlocal energy dissipation at room temperature, which is reminiscent of ballistic transport of low-temperature quantum conductors. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

MEMS in Space Systems

NASA Technical Reports Server (NTRS)

Lyke, J. C.; Michalicek, M. A.; Singaraju, B. K.

1995-01-01

Micro-electro-mechanical systems (MEMS) provide an emerging technology that has the potential for revolutionizing the way space systems are designed, assembled, and tested. The high launch costs of current space systems are a major determining factor in the amount of functionality that can be integrated in a typical space system. MEMS devices have the ability to increase the functionality of selected satellite subsystems while simultaneously decreasing spacecraft weight. The Air Force Phillips Laboratory (PL) is supporting the development of a variety of MEMS related technologies as one of several methods to reduce the weight of space systems and increase their performance. MEMS research is a natural extension of PL research objectives in micro-electronics and advanced packaging. Examples of applications that are under research include on-chip micro-coolers, micro-gyroscopes, vibration sensors, and three-dimensional packaging technologies to integrate electronics with MEMS devices. The first on-orbit space flight demonstration of these and other technologies is scheduled for next year.

A Distributed Amplifier System for Bilayer Lipid Membrane (BLM) Arrays With Noise and Individual Offset Cancellation.

PubMed

Crescentini, Marco; Thei, Frederico; Bennati, Marco; Saha, Shimul; de Planque, Maurits R R; Morgan, Hywel; Tartagni, Marco

2015-06-01

Lipid bilayer membrane (BLM) arrays are required for high throughput analysis, for example drug screening or advanced DNA sequencing. Complex microfluidic devices are being developed but these are restricted in terms of array size and structure or have integrated electronic sensing with limited noise performance. We present a compact and scalable multichannel electrophysiology platform based on a hybrid approach that combines integrated state-of-the-art microelectronics with low-cost disposable fluidics providing a platform for high-quality parallel single ion channel recording. Specifically, we have developed a new integrated circuit amplifier based on a novel noise cancellation scheme that eliminates flicker noise derived from devices under test and amplifiers. The system is demonstrated through the simultaneous recording of ion channel activity from eight bilayer membranes. The platform is scalable and could be extended to much larger array sizes, limited only by electronic data decimation and communication capabilities.

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

NASA Technical Reports Server (NTRS)

White, Mark; Huang, Bing; Qin, Jin; Gur, Zvi; Talmor, Michael; Chen, Yuan; Heidecker, Jason; Nguyen, Duc; Bernstein, Joseph

2005-01-01

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Turflinger, T.; Schmeichel, W.; Krieg, J.; Titus, J.; Campbell, A.; Reeves, M.; Marshall (P.); Hardage, Donna (Technical Monitor)

2004-01-01

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Free-world microelectronic manufacturing equipment

NASA Astrophysics Data System (ADS)

Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

1988-12-01

Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

Ceramic materials of low-temperature synthesis for dielectric coating applied by 3D aerosol printing used in nano- and microelectronics, lighting engineering, and spacecraft control devices

NASA Astrophysics Data System (ADS)

Ivanov, A. A.; Tuev, V. I.; Nisan, A. V.; Potapov, G. N.

2016-11-01

A synthesis technique of low-temperature ceramic material based on aluminosilicates of dendrimer morphology capable to contain up to 80 wt % of nitrides and oxides of high-melting compounds as filler has been developed. The synthesis is based on a sol-gel method followed by mechanochemical treatment and ultrasonic dispersing. Dielectric ceramic layers with the layer thickness in the nanometer range and high thermal conductivity have been obtained for the first time by 3D aerosol printing of the synthesized material. The study of the obtained ceramic coating on the metal surface (Al) has proved its use prospects in microelectronics, light engineering, and devices for special purposes.

CRRES microelectronics package flight data analysis

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1993-01-01

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

A wearable, low-power, health-monitoring instrumentation based on a Programmable System-on-Chip.

PubMed

Massot, Bertrand; Gehin, Claudine; Nocua, Ronald; Dittmar, Andre; McAdams, Eric

2009-01-01

Improvement in quality and efficiency of health and medicine, at home and in hospital, has become of paramount importance. The solution of this problem would require the continuous monitoring of several key patient parameters, including the assessment of autonomic nervous system (ANS) activity using non-invasive sensors, providing information for emotional, sensorial, cognitive and physiological analysis of the patient. Recent advances in embedded systems, microelectronics, sensors and wireless networking enable the design of wearable systems capable of such advanced health monitoring. The subject of this article is an ambulatory system comprising a small wrist device connected to several sensors for the detection of the autonomic nervous system activity. It affords monitoring of skin resistance, skin temperature and heart activity. It is also capable of recording the data on a removable media or sending it to computer via a wireless communication. The wrist device is based on a Programmable System-on-Chip (PSoC) from Cypress: PSoCs are mixed-signal arrays, with dynamic, configurable digital and analogical blocks and an 8-bit Microcontroller unit (MCU) core on a single chip. In this paper we present first of all the hardware and software architecture of the device, and then results obtained from initial experiments.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At an earlier conference we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art CMOS technologies. In this presentation, we extend this discussion focusing on the following areas: (1) Device packaging, (2) Evolving physical single even upset mechanisms, (3) Device complexity, and (4) the goal of understanding the limitations and interpretation of radiation testing results.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

A Low Cost Rad-Tolerant Standard Cell Library

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Maki, Gary K.

1997-01-01

This paper describes circuit design techniques developed at the NASA Institute of Advanced Microelectronics that have been shown to protect CMOS circuits from the deleterious effects of the natural space radiation environment. The IAuE is leading a program to incorporate these radiation-tolerance providing design techniques into a commercial standard cell library that will be used in conjunction with available Electronic Design Automation tools to produce space flight qualified microelectronics fabricated at modern commercial CMOS foundries.

Data encryption standard ASIC design and development report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robertson, Perry J.; Pierson, Lyndon George; Witzke, Edward L.

2003-10-01

This document describes the design, fabrication, and testing of the SNL Data Encryption Standard (DES) ASIC. This device was fabricated in Sandia's Microelectronics Development Laboratory using 0.6 {micro}m CMOS technology. The SNL DES ASIC was modeled using VHDL, then simulated, and synthesized using Synopsys, Inc. software and finally IC layout was performed using Compass Design Automation's CAE tools. IC testing was performed by Sandia's Microelectronic Validation Department using a HP 82000 computer aided test system. The device is a single integrated circuit, pipelined realization of DES encryption and decryption capable of throughputs greater than 6.5 Gb/s. Several enhancements accommodate ATMmore » or IP network operation and performance scaling. This design is the latest step in the evolution of DES modules.« less

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

Information Retrieval Research and ESPRIT.

ERIC Educational Resources Information Center

Smeaton, Alan F.

1987-01-01

Describes the European Strategic Programme of Research and Development in Information Technology (ESPRIT), and its five programs: advanced microelectronics, software technology, advanced information processing, office systems, and computer integrated manufacturing. The emphasis on logic programming and ESPRIT as the European response to the…

Microelectronics and nanotechnology, and the fractal-like structure of information, knowledge, and science

NASA Astrophysics Data System (ADS)

Nutu, Catalin Silviu; Axinte, Tiberiu

2016-12-01

The article is centralizing and is concentrating the information from a considerable amount of papers related to the field of microelectronics and nanotechnology and also provides an approach to science and to the future evolution of science, based on the theory of the fractals. The new science of microelectronics and nanotechnology is one of the best examples of how the science of future will look like, namely at the confluence of increasingly more other sciences, where increasingly more sciences are to be added in the structure of the new science and the role of the multidisciplinary and interdisciplinary is becoming more and more important. Although not giving explicit details (e.g. specific formulas) the theory of fractals is used in the paper to explain the way of generation of new science for the specific case of microelectronics and nanotechnology, but is also used in the paper to outline a different way to approach new science and eventually to approach new sciences to come. There are mainly two motivations for the present article, namely: on the one hand, the position of the microelectronics and nanotechnologies in the fractal-like structure of science, and, on the other hand, that much of the communication, information, knowledge and science transfer, dissemination and advancement in sciences are taking place using the new technologies related to microelectronics and nanotechnologies.

Listening to Brain Microcircuits for Interfacing With External World-Progress in Wireless Implantable Microelectronic Neuroengineering Devices: Experimental systems are described for electrical recording in the brain using multiple microelectrodes and short range implantable or wearable broadcasting units.

PubMed

Nurmikko, Arto V; Donoghue, John P; Hochberg, Leigh R; Patterson, William R; Song, Yoon-Kyu; Bull, Christopher W; Borton, David A; Laiwalla, Farah; Park, Sunmee; Ming, Yin; Aceros, Juan

2010-01-01

Acquiring neural signals at high spatial and temporal resolution directly from brain microcircuits and decoding their activity to interpret commands and/or prior planning activity, such as motion of an arm or a leg, is a prime goal of modern neurotechnology. Its practical aims include assistive devices for subjects whose normal neural information pathways are not functioning due to physical damage or disease. On the fundamental side, researchers are striving to decipher the code of multiple neural microcircuits which collectively make up nature's amazing computing machine, the brain. By implanting biocompatible neural sensor probes directly into the brain, in the form of microelectrode arrays, it is now possible to extract information from interacting populations of neural cells with spatial and temporal resolution at the single cell level. With parallel advances in application of statistical and mathematical techniques tools for deciphering the neural code, extracted populations or correlated neurons, significant understanding has been achieved of those brain commands that control, e.g., the motion of an arm in a primate (monkey or a human subject). These developments are accelerating the work on neural prosthetics where brain derived signals may be employed to bypass, e.g., an injured spinal cord. One key element in achieving the goals for practical and versatile neural prostheses is the development of fully implantable wireless microelectronic "brain-interfaces" within the body, a point of special emphasis of this paper.

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, Frederick C.; Kingston, John J.; Clarke, John

1993-01-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

A software upgrade method for micro-electronics medical implants.

PubMed

Cao, Yang; Hao, Hongwei; Xue, Lin; Li, Luming; Ma, Bozhi

2006-01-01

A software upgrade method for micro-electronics medical implants is designed to enhance the devices' function or renew the software if there are some bugs found, the software updating or some memory units disabled. The implants needn't be replaced by operations if the faults can be corrected through reprogramming, which reduces the patients' pain and improves the safety effectively. This paper introduces the software upgrade method using in-application programming (IAP) and emphasizes how to insure the system, especially the implanted part's reliability and stability while upgrading.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1993-10-26

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Database Management Systems: A Case Study of Faculty of Open Education

ERIC Educational Resources Information Center

Kamisli, Zehra

2004-01-01

We live in the information and the microelectronic age, where technological advancements become a major determinant of our lifestyle. Such advances in technology cannot possibly be made or sustained without concurrent advancement in management systems (5). The impact of computer technology on organizations and society is increasing as new…

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

78 FR 59916 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

... Minnesota, Dept. of Chemical Engineering & Material Science, 421 Washington Avenue SE, Minneapolis, MN 55455... microelectronics, micro-electromechanical systems (MEMS) as well as nanotechnology materials and devices...

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

Modeling Self-Heating Effects in Nanoscale Devices

NASA Astrophysics Data System (ADS)

Raleva, K.; Shaik, A. R.; Vasileska, D.; Goodnick, S. M.

2017-08-01

Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.

JPRS report. Science and technology: Europe and Latin America

NASA Astrophysics Data System (ADS)

1987-12-01

Topics addressed include: advanced materials; aerospace; civil aviation; automative industry; biotechnology; computers; metallurgical industries; microelectronics; science and technology policy; and lasers, sensor, and optics.

Editorial Conference Comments by the General Chairman

NASA Astrophysics Data System (ADS)

Hopkins, M. A.

2009-12-01

This paper tells about the comments given by the general chairman in the 2009 conference at Quebec City's Hilton and convection centre in the province of Quebec, canada. NSREC is recoginized as one of the premier international conference on radiation effects in electronic materials, devices and systems. Also the radiation effects in microelectronic devices and materials are discussed. Reliability effects in electronic device is also given in the conference.

Ring modulators with enhanced efficiency based on standing-wave operation on a field-matched, interdigitated p-n junction.

PubMed

Pavanello, Fabio; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2016-11-28

We propose ring modulators based on interdigitated p-n junctions that exploit standing rather than traveling-wave resonant modes to improve modulation efficiency, insertion loss and speed. Matching the longitudinal nodes and antinodes of a standing-wave mode with high (contacts) and low (depletion regions) carrier density regions, respectively, simultaneously lowers loss and increases sensitivity significantly. This approach permits further to relax optical constraints on contacts placement and can lead to lower device capacitance. Such structures are well-matched to fabrication in advanced microelectronics CMOS processes. Device architectures that exploit this concept are presented along with their benefits and drawbacks. A temporal coupled mode theory model is used to investigate the static and dynamic response. We show that modulation efficiencies or loss Q factors up to 2 times higher than in previous traveling-wave geometries can be achieved leading to much larger extinction ratios. Finally, we discuss more complex doping geometries that can improve carrier dynamics for higher modulation speeds in this context.

Radiation measurement in the environment of FLASH using passive dosimeters

NASA Astrophysics Data System (ADS)

Mukherjee, B.; Rybka, D.; Makowski, D.; Lipka, T.; Simrock, S.

2007-08-01

Sophisticated electronic devices comprising sensitive microelectronic components have been installed in the close proximity of the 720 MeV superconducting electron linear accelerator (linac) driving the FLASH (Free Electron Laser in Hamburg), presently in operation at DESY in Hamburg. Microelectronic chips are inherently vulnerable to ionizing radiation, usually generated during routine operation of high-energy particle accelerator facilities like the FLASH. Hence, in order to assess the radiation effect on microelectronic chips and to develop suitable mitigation strategy, it becomes imperative to characterize the radiation field in the FLASH environment. We have evaluated the neutron and gamma energy (spectra) and dose distributions at critical locations in the FLASH tunnel using superheated emulsion (bubble) detectors, GaAs light emitting diodes (LED), LiF-thermoluminescence dosimeters (TLD) and radiochromic (Gafchromic EBT) films. This paper highlights the application of passive dosimeters for an accurate analysis of the radiation field produced by high-energy electron linear accelerators.

Microelectronic components and metallic oxide studies and applications

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1976-01-01

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL

EPA Science Inventory

The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator inf...

The Impact on Space Radiation Requirements and Effects on ASIMS

NASA Technical Reports Server (NTRS)

Barnes, C.; Johnston, A.; Swift, G.

1995-01-01

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

A molecular shift register based on electron transfer

NASA Technical Reports Server (NTRS)

Hopfield, J. J.; Onuchic, Josenelson; Beratan, David N.

1988-01-01

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

[Hemodialysis in patients with chronic renal insufficiency].

PubMed

Canaud, Bernard; Leray-Moragués, Hélène; Chenine-Koualef, Leila; Patrier, Laure

2012-01-01

Hemodialysis is the most advanced form of artificial renal support. It ensures the survival of almost 2 million patients wordwide. Considerable progress has been made in recent years thanks to a better understanding of uremia, optimization of treatment modalities and more personalized treatment schedules. Increase of uremic toxins removal, improvement of hemodynamic tolerance of the sessions, reduction of proinflammatory reactions due to the bioincompatibility system are major advances that may explain the reduction of morbidity and mortality in dialysis patients. New technologies (nanotechnology, biotechnology, microelectronics) are now expected to introduce further progresses by miniaturizing devices and providing them with an "artificial intelligence" capable of interacting with the patient. The main obstacle remains ageing of uremic patients, increasing prevalence of comorbidities and shortage of social resources that are not conducive to innovation. By promoting a more physiological, longer and more effective hemodialysis performed at home with help of teledialysis monitoring that would probably be an interesting option to evaluate on a medico-economical point of view.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

Deep Space 1: Testing New Technologies for Future Small Bodies Missions

NASA Technical Reports Server (NTRS)

Rayman, Marc D.

2001-01-01

Launched on October 24, 1998, Deep Space 1 (DS1) was the first mission of NASA's New Millennium Program, chartered to validate in space high-risk, new technologies important for future space science programs. The advanced technology payload that was tested on DS1 comprises solar electric propulsion, solar concentrator arrays, autonomous on-board navigation and other autonomous systems, several telecommunications and microelectronics devices, and two low-mass integrated science instrument packages. The mission met or exceeded all of its success criteria. The 12 technologies were rigorously exercised so that subsequent flight projects would not have to incur the cost and risk of being the fist users of these new capabilities. Examples of the benefits to future small body missions from DS1's technologies will be described.

Nano-Satellite Avionics

NASA Technical Reports Server (NTRS)

Culver, Harry

1999-01-01

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Design, processing and testing of LSI arrays hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Salmassy, S.

1978-01-01

Those factors affecting the cost of electronic subsystems utilizing LSI microcircuits were determined and the most efficient methods for low cost packaging of LSI devices as a function of density and reliability were developed.

Image analysis for microelectronic retinal prosthesis.

PubMed

Hallum, L E; Cloherty, S L; Lovell, N H

2008-01-01

By way of extracellular, stimulating electrodes, a microelectronic retinal prosthesis aims to render discrete, luminous spots-so-called phosphenes-in the visual field, thereby providing a phosphene image (PI) as a rudimentary remediation of profound blindness. As part thereof, a digital camera, or some other photosensitive array, captures frames, frames are analyzed, and phosphenes are actuated accordingly by way of modulated charge injections. Here, we present a method that allows the assessment of image analysis schemes for integration with a prosthetic device, that is, the means of converting the captured image (high resolution) to modulated charge injections (low resolution). We use the mutual-information function to quantify the amount of information conveyed to the PI observer (device implantee), while accounting for the statistics of visual stimuli. We demonstrate an effective scheme involving overlapping, Gaussian kernels, and discuss extensions of the method to account for shortterm visual memory in observers, and their perceptual errors of omission and commission.

Active Microelectronic Neurosensor Arrays for Implantable Brain Communication Interfaces

PubMed Central

Song, Y.-K.; Borton, D. A.; Park, S.; Patterson, W. R.; Bull, C. W.; Laiwalla, F.; Mislow, J.; Simeral, J. D.; Donoghue, J. P.; Nurmikko, A. V.

2010-01-01

We have built a wireless implantable microelectronic device for transmitting cortical signals transcutaneously. The device is aimed at interfacing a microelectrode array cortical to an external computer for neural control applications. Our implantable microsystem enables presently 16-channel broadband neural recording in a non-human primate brain by converting these signals to a digital stream of infrared light pulses for transmission through the skin. The implantable unit employs a flexible polymer substrate onto which we have integrated ultra-low power amplification with analog multiplexing, an analog-to-digital converter, a low power digital controller chip, and infrared telemetry. The scalable 16-channel microsystem can employ any of several modalities of power supply, including via radio frequency by induction, or infrared light via a photovoltaic converter. As of today, the implant has been tested as a sub-chronic unit in non-human primates (~ 1 month), yielding robust spike and broadband neural data on all available channels. PMID:19502132

Nanoscale temperature mapping in operating microelectronic devices

DOE PAGES

Mecklenburg, Matthew; Hubbard, William A.; White, E. R.; ...

2015-02-05

We report that modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope (STEM) and electron energy loss spectroscopy (EELS), we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with amore » statistical precision of 3 kelvin/hertz ₋1/2, an accuracy of 10%, and nanometer-scale resolution. Lastly, many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.« less

Modeling of a Micro-Electronic Mechanical Systems (MEMS) Deformable Mirror for Simulation and Characterization

DTIC Science & Technology

2016-09-01

1  II.  MODEL DESIGN ...Figure 10.  Experimental Optical Layout for the Boston DM Characterization ..........13  Figure 11.  Side View Showing the Curved Surface on a DM...of different methods for deposition, patterning, and etching until the desired design of the device is achieved. While a large number of devices

Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2009-06-01

authorized documents. Citation of manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy...processed into FETs using standard microelectronics processing techniques. The resulting devices were characterized using a semiconductor parameter...method will help to determine which conditions are useful for producing CNT devices for chemical sensing and electronic applications. 15. SUBJECT TERMS

Space Radiation Environment Prediction for VLSI microelectronics devices onboard a LEO Satellite using OMERE-Trad Software

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

This tutorial/survey paper presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with perigee at 300 Km, apogee at 600Km altitude having different orbital inclinations to predict the reliability of onboard Bulk Built-In Current Sensor (BBICS) fabricated in 350nm technology node at OptMA Lab. UFMG Brazil. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed BBICS. The Space radiation environment has been modeled in the form of particles trapped in Van-Allen radiation belts(RBs), Energetic Solar Particles Events (ESPE) and Galactic Cosmic Rays (GCR) where as its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). Finally, the required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been estimated /determined with assumed standard thickness of Aluminum shielding. In order to evaluate space radiation environment and analyze energetic particles effects on BBICS, OMERE toolkit developed by TRAD was utilized.

454th Brookhaven Lecture

ScienceCinema

Charles Black

2017-12-09

Black discusses examples of integrating self-assembly into semiconductor microelectronics, where advances in the ability to define circuit elements at ever-higher resolution have largely fueled more than 40 years of consistent performance improvements

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

PubMed

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

FBIS report. Science and technology: Europe/International, March 29, 1996

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1996-03-29

;Partial Contents: Advanced Materials (EU Project to Improve Production in Metal Matrix Compounds Noted, Germany: Extremely Hard Carbon Coating Development, Italy: Director of CNR Metallic Materials Institute Interviewed); Aerospace (ESA Considers Delays, Reductions as Result of Budget Cuts, Italy: Space Agency`s Director on Restructuring, Future Plans); Automotive, Transportation (EU: Clean Diesel Engine Technology Research Reviewed); Biotechnology (Germany`s Problems, Successes in Biotechnology Discussed); Computers (EU Europort Parallel Computing Project Concluded, Italy: PQE 2000 Project on Massively Parallel Systems Viewed); Defense R&D (France: Future Tasks of `Brevel` Military Intelligence Drone Noted); Energy, Environment (German Scientist Tests Elimination of Phosphates); Advanced Manufacturing (France:more » Advanced Rapid Prototyping System Presented); Lasers, Sensors, Optics (France: Strategy of Cilas Laser Company Detailed); Microelectronics (France: Simulation Company to Develop Microelectronic Manufacturing Application); Nuclear R&D (France: Megajoule Laser Plan, Cooperation with Livermore Lab Noted); S&T Policy (EU Efforts to Aid Small Companies` Research Viewed); Telecommunications (France Telecom`s Way to Internet).« less

Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landi, Giovanni, E-mail: glandi@unisa.it; Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano; Altavilla, Claudia

2015-12-17

Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they canmore » be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.« less

Research News: Are VLSI Microcircuits Too Hard to Design?

ERIC Educational Resources Information Center

Robinson, Arthur L.

1980-01-01

This research news article on microelectronics discusses the scientific challenge the integrated circuit industry will have in the next decade, for designing the complicated microcircuits made possible by advancing miniaturization technology. (HM)

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review

NASA Astrophysics Data System (ADS)

Ray, Samit K.; Katiyar, Ajit K.; Raychaudhuri, Arup K.

2017-03-01

Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

Microelectronic Stimulator Array

DTIC Science & Technology

2000-08-09

narrow, flexible micro-cable 36. The micro-cable 36 is approximately six inches in length and is custom made using gold leads patterned on polyimide ...neural prosthesis device is biocompatibility and safety. Because the duration of any tests with the retinal prosthesis test device 30 are very short...less than an hour), biocompatibility issues are primarily reduced to acute effects of the testing and need not address the more difficult chronic

Proceedings of the Goddard Space Flight Center Workshop on Robotics for Commercial Microelectronic Processes in Space

NASA Technical Reports Server (NTRS)

1987-01-01

Potential applications of robots for cost effective commercial microelectronic processes in space were studied and the associated robotic requirements were defined. Potential space application areas include advanced materials processing, bulk crystal growth, and epitaxial thin film growth and related processes. All possible automation of these processes was considered, along with energy and environmental requirements. Aspects of robot capabilities considered include system intelligence, ROM requirements, kinematic and dynamic specifications, sensor design and configuration, flexibility and maintainability. Support elements discussed included facilities, logistics, ground support, launch and recovery, and management systems.

Quantifying Electromigration Processes in Sn-0.7Cu Solder with Lab-Scale X-Ray Computed Micro-Tomography

NASA Astrophysics Data System (ADS)

Mertens, James Charles Edwin

For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (muXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale muXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging. In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering 'zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs. The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.

Microsystem technology as a road from macro to nanoworld.

PubMed

Grabiec, Piotr; Domański, Krzysztof; Janus, Paweł; Zaborowski, Michał; Jaroszewicz, Bogdan

2005-04-01

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations. Development of these applications requires however cooperation of multidisciplinary team of specialists, covering broad range of physics, (bio) chemistry and electronics, not mentioning medical doctors and other medical specialists. Thus, dissemination, of knowledge about existing processing capabilities is of key importance. In this paper, examples of various applications of microelectronic technology for fabrication of Microsystems which may be used for medicine and chemistry, will be presented. Besides, information concerning a design and technology potential available in poland and new, emerging opportunities will be given.

Advanced packaging for Integrated Micro-Instruments

NASA Technical Reports Server (NTRS)

Lyke, James L.

1995-01-01

The relationship between packaging, microelectronics, and micro-electrical-mechanical systems (MEMS) is an important one, particularly when the edges of performance boundaries are pressed, as in the case of miniaturized systems. Packaging is a sort of physical backbone that enables the maximum performance of these systems to be realized, and the penalties imposed by conventional packing approaches is particularly limiting for MEMS devices. As such, advanced packaging approaches, such as multi-chip modules (MCM's) have been touted as a true means of electronic 'enablement' for a variety of application domains. Realizing an optimum system of packaging, however, in not as simple as replacing a set of single chip packages with a substrate of interconnections. Research at Phillips Laboratory has turned up a number of integrating options in the two- and three-dimensional rending of miniature systems with physical interconnection structures with intrinsically high performance. Not only do these structures motivate the redesign of integrated circuits (IC's) for lower power, but they possess interesting features that provide a framework for the direct integration of MEMS devices. Cost remains a barrier to the application of MEMS devices, even in space systems. Several innovations are suggested that will result in lower cost and more rapid cycle time. First, the novelty of a 'constant floor plan' MCM which encapsulates a variety of commonly used components into a stockable, easily customized assembly is discussed. Next, the use of low-cost substrates is examined. The anticipated advent of ultra-high density interconnect (UHDI) is suggested as the limit argument of advanced packaging. Finally, the concept of a heterogeneous 3-D MCM system is outlined that allows for the combination of different compatible packaging approaches into a uniformly dense structure that could also include MEMS-based sensors.

Independent Research and Independent Exploratory Development Annual Report Fiscal Year 1975

DTIC Science & Technology

1975-09-01

and Coding Study.(Z?80) ................................... ......... .................... 40 Optical Cover CMMUnicallor’s Using Laser Transceiverst...Using Auger Spectroscopy and PUBLICATIONS Additional Advanced Analytical Techniques," Wagner, N. K., "Auger Electron Spectroscopy NELC Technical Note 2904...K.. "Analysis of Microelectronic Materials Using Auger Spectroscopy and Additional Advanced Analytical Techniques," Contact: Proceedings of the

Wrist display concept demonstration based on 2-in. color AMOLED

NASA Astrophysics Data System (ADS)

Meyer, Frederick M.; Longo, Sam J.; Hopper, Darrel G.

2004-09-01

The wrist watch needs an upgrade. Recent advances in optoelectronics, microelectronics, and communication theory have established a technology base that now make the multimedia Dick Tracy watch attainable during the next decade. As a first step towards stuffing the functionality of an entire personnel computer (PC) and television receiver under a watch face, we have set a goal of providing wrist video capability to warfighters. Commercial sector work on the wrist form factor already includes all the functionality of a personal digital assistant (PDA) and full PC operating system. Our strategy is to leverage these commercial developments. In this paper we describe our use of a 2.2 in. diagonal color active matrix light emitting diode (AMOLED) device as a wrist-mounted display (WMD) to present either full motion video or computer generated graphical image formats.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Ying; Li, Hong; Bridges, Denzel

We report that the continuing miniaturization of microelectronics is pushing advanced manufacturing into nanomanufacturing. Nanojoining is a bottom-up assembly technique that enables functional nanodevice fabrication with dissimilar nanoscopic building blocks and/or molecular components. Various conventional joining techniques have been modified and re-invented for joining nanomaterials. Our review surveys recent progress in nanojoining methods, as compared to conventional joining processes. Examples of nanojoining are given and classified by the dimensionality of the joining materials. At each classification, nanojoining is reviewed and discussed according to materials specialties, low dimensional processing features, energy input mechanisms and potential applications. The preparation of new intermetallicmore » materials by reactive nanoscale multilayer foils based on self-propagating high-temperature synthesis is highlighted. This review will provide insight into nanojoining fundamentals and innovative applications in power electronics packaging, plasmonic devices, nanosoldering for printable electronics, 3D printing and space manufacturing.« less

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Design and evaluation of potentiometric principles for bladder volume monitoring: a preliminary study.

PubMed

Chen, Shih-Ching; Hsieh, Tsung-Hsun; Fan, Wen-Jia; Lai, Chien-Hung; Chen, Chun-Lung; Wei, Wei-Feng; Peng, Chih-Wei

2015-06-01

Recent advances in microelectronics and wireless transmission technology have led to the development of various implantable sensors for real-time monitoring of bladder conditions. Although various sensing approaches for monitoring bladder conditions were reported, most such sensors have remained at the laboratory stage due to the existence of vital drawbacks. In the present study, we explored a new concept for monitoring the bladder capacity on the basis of potentiometric principles. A prototype of a potentiometer module was designed and fabricated and integrated with a commercial wireless transmission module and power unit. A series of in vitro pig bladder experiments was conducted to determine the best design parameters for implementing the prototype potentiometric device and to prove its feasibility. We successfully implemented the potentiometric module in a pig bladder model in vitro, and the error of the accuracy of bladder volume detection was <±3%. Although the proposed potentiometric device was built using a commercial wireless module, the design principles and animal experience gathered from this research can serve as a basis for developing new implantable bladder sensors in the future.

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices.

PubMed

Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna

2016-04-27

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

IEEE WMED 2016 Homepage

Science.gov Websites

characterization, design, and new device technologies. This workshop will consist of invited talks, contributed and Reliability Semiconductor package reliability, Design for Manufacturability, Stacked die packaging and Novel assembly processes Microelectronic Circuit Design New product design, high-speed and/or low

Innovations in microelectronics and solid state at North Carolina Agricultural and Technical State University

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1977-01-01

Research in the following areas is described: (1) Characterization and applications of metallic oxide devices; (2) Electronic properties and energy conversion in organic amorphous semiconductors; (3) Material growth and characterization directed toward improving 3-5 heterojunction solar cells.

Stroboscopic Imaging Interferometer for MEMS Performance Measurement

DTIC Science & Technology

2007-07-15

Optical Iocusing L.aser Fiber Optics I) c 0 Mim er Collimator - C d Microcope lcam. indo Cold Objcclive Splitte FingerCCD "Mount irnro MEMS PicL zStack...Electronics and Photonics Laboratory: Microelectronics, VLSI reliability, failure analysis, solid-state device physics, compound semiconductors

Hardware Acceleration of Adaptive Neural Algorithms.

DOE Office of Scientific and Technical Information (OSTI.GOV)

James, Conrad D.

As tradit ional numerical computing has faced challenges, researchers have turned towards alternative computing approaches to reduce power - per - computation metrics and improve algorithm performance. Here, we describe an approach towards non - conventional computing that strengthens the connection between machine learning and neuroscience concepts. The Hardware Acceleration of Adaptive Neural Algorithms (HAANA) project ha s develop ed neural machine learning algorithms and hardware for applications in image processing and cybersecurity. While machine learning methods are effective at extracting relevant features from many types of data, the effectiveness of these algorithms degrades when subjected to real - worldmore » conditions. Our team has generated novel neural - inspired approa ches to improve the resiliency and adaptability of machine learning algorithms. In addition, we have also designed and fabricated hardware architectures and microelectronic devices specifically tuned towards the training and inference operations of neural - inspired algorithms. Finally, our multi - scale simulation framework allows us to assess the impact of microelectronic device properties on algorithm performance.« less

An introduction to NASA's advanced computing program: Integrated computing systems in advanced multichip modules

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Alkalai, Leon

1996-01-01

Recent changes within NASA's space exploration program favor the design, implementation, and operation of low cost, lightweight, small and micro spacecraft with multiple launches per year. In order to meet the future needs of these missions with regard to the use of spacecraft microelectronics, NASA's advanced flight computing (AFC) program is currently considering industrial cooperation and advanced packaging architectures. In relation to this, the AFC program is reviewed, considering the design and implementation of NASA's AFC multichip module.

Microelectronic electroporation array

NASA Astrophysics Data System (ADS)

Johnson, Lee J.; Shaffer, Kara J.; Skeath, Perry; Perkins, Frank K.; Pancrazio, Joseph; Scribner, Dean

2004-06-01

Gene Array technology has allowed for the study of gene binding by creating thousands of potential binding sites on a single device. A limitation of the current technology is that the effects of the gene and the gene-derived proteins cannot be studied in situ the same way, thousand site cell arrays are not readily available. We propose a new device structure to study the effects of gene modification on cells. This new array technology uses electroporation to target specific areas within a cell culture for transfection of genes. Electroporation arrays will allow high throughput analysis of gene effects on a given cell's response to a stress or a genes ability to restore normal cell function in disease modeling cells. Fluorescent imaging of dye labeled indicator molecules or cell viability will provide results indicating the most effective genes. The electroporation array consists of a microelectronic circuit, ancillary electronics, protecting electrode surface for cell culturing and a perfusion system for gene or drug delivery. The advantages of the current device are that there are 3200 sites for electroporation, all or any subsets of the electrodes can be activated. The cells are held in place by the electrode material. This technology could also be applied to high throughput screening of cell impermeant drugs.

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Effect of Joule heating and current crowding on electromigration in mobile technology

NASA Astrophysics Data System (ADS)

Tu, K. N.; Liu, Yingxia; Li, Menglu

2017-03-01

In the present era of big data and internet of things, the use of microelectronic products in all aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones and wearable i-products. These devices are facing the need for higher power and greater functionality applications such as in i-health, yet they are limited by physical size. At the moment, software (Apps) is much ahead of hardware in mobile technology. To advance hardware, the end of Moore's law in two-dimensional integrated circuits can be extended by three-dimensional integrated circuits (3D ICs). The concept of 3D ICs has been with us for more than ten years. The challenge in 3D IC technology is dense packing by using both vertical and horizontal interconnections. Mass production of 3D IC devices is behind schedule due to cost because of low yield and uncertain reliability. Joule heating is serious in a dense structure because of heat generation and dissipation. A change of reliability paradigm has advanced from failure at a specific circuit component to failure at a system level weak-link. Currently, the electronic industry is introducing 3D IC devices in mainframe computers, where cost is not an issue, for the purpose of collecting field data of failure, especially the effect of Joule heating and current crowding on electromigration. This review will concentrate on the positive feedback between Joule heating and electromigration, resulting in an accelerated system level weak-link failure. A new driving force of electromigration, the electric potential gradient force due to current crowding, will be reviewed critically. The induced failure tends to occur in the low current density region.

Work and Programmable Automation.

ERIC Educational Resources Information Center

DeVore, Paul W.

A new industrial era based on electronics and the microprocessor has arrived, an era that is being called intelligent automation. Intelligent automation, in the form of robots, replaces workers, and the new products, using microelectronic devices, require significantly less labor to produce than the goods they replace. The microprocessor thus…

Nuclear fragmentation studies for microelectronic application

NASA Technical Reports Server (NTRS)

Ngo, Duc M.; Wilson, John W.; Buck, Warren W.; Fogarty, Thomas N.

1989-01-01

A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. Predicted results are compared to experiments with the surface barrier detectors of McNulty et al. The intranuclear cascade nuclear reaction model does not predict the McNulty experimental data for the highest energy events. A semiempirical nuclear cross section gives an adequate explanation of McNulty's experiments. Application of the formalism to specific electronic devices is discussed.

Center for High-Frequency Microelectronics

DTIC Science & Technology

1992-08-31

34 IEEE Transactions on Electron Devices, 38, No. 6, pp. 1324-1333, June 1991. 185. C. C. Chen, R. K. Mains and G. I. Haddad, " High - Power Generation in...Weiss, J. Hu and W.-P. Hong, "Electronic 0 Properties of Power High Electron Mobility Transistors," Conference on Ballistic Electrons for Transistors...method at higher frequencies than previously believed. - Calculations of high - power generation modes in Si IMPATT devices in the 100-200 GHz range have

Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report

NASA Technical Reports Server (NTRS)

Bekey, I.; Mayer, H. L.; Wolfe, M. G.

1976-01-01

The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators.

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

Towards Non-Equilibrium Dynamics with Trapped Ions

NASA Astrophysics Data System (ADS)

Silbert, Ariel; Jubin, Sierra; Doret, Charlie

2016-05-01

Atomic systems are superbly suited to the study of non-equilibrium dynamics. These systems' exquisite isolation from environmental perturbations leads to long relaxation times that enable exploration of far-from-equilibrium phenomena. One example of particular relevance to experiments in trapped ion quantum information processing, metrology, and precision spectroscopy is the approach to thermal equilibrium of sympathetically cooled linear ion chains. Suitable manipulation of experimental parameters permits exploration of the quantum-to-classical crossover between ballistic transport and diffusive, Fourier's Law conduction, a topic of interest not only to the trapped ion community but also for the development of microelectronic devices and other nanoscale structures. We present progress towards trapping chains of multiple co-trapped calcium isotopes geared towards measuring thermal equilibration and discuss plans for future experiments in non-equilibrium statistical mechanics. This work is supported by Cottrell College Science Award from the Research Corporation for Science Advancement and by Williams College.

Zero-dimensional to three-dimensional nanojoining: current status and potential applications

DOE PAGES

Ma, Ying; Li, Hong; Bridges, Denzel; ...

2016-08-01

We report that the continuing miniaturization of microelectronics is pushing advanced manufacturing into nanomanufacturing. Nanojoining is a bottom-up assembly technique that enables functional nanodevice fabrication with dissimilar nanoscopic building blocks and/or molecular components. Various conventional joining techniques have been modified and re-invented for joining nanomaterials. Our review surveys recent progress in nanojoining methods, as compared to conventional joining processes. Examples of nanojoining are given and classified by the dimensionality of the joining materials. At each classification, nanojoining is reviewed and discussed according to materials specialties, low dimensional processing features, energy input mechanisms and potential applications. The preparation of new intermetallicmore » materials by reactive nanoscale multilayer foils based on self-propagating high-temperature synthesis is highlighted. This review will provide insight into nanojoining fundamentals and innovative applications in power electronics packaging, plasmonic devices, nanosoldering for printable electronics, 3D printing and space manufacturing.« less

[Functional rehabilitation of spinal cord injured persons using neuroprostheses].

PubMed

Rupp, R; Abel, R

2005-02-01

Recent technological advancements in microelectronics have led to the establishment of systems for restoration of basic functions in spinal cord injured (SCI) persons using functional electrical stimulation (FES). FES systems for the restoration of bladder and diaphragm function are well established in clinical practice. While FES systems in the lower extremities for standing/walking have not yet achieved widespread clinical acceptance, devices which enhance or restore the grasp function in tetraplegic patients with missing control of hand and fingers are demonstrably successful. Especially with the use of implantable systems a reliable, easy to handle application is possible. The most recent developments in micromechanical engineering are aimed at providing minimally invasive, subminiature systems for functional support in incomplete SCI persons. The possibility of direct brain control of FES systems will expand the application of neuroprostheses for patients with injury of the high cervical spinal cord.

Secondary School Projects and the Microchip.

ERIC Educational Resources Information Center

Irvine, A. F.

This study of the applications of microelectronic devices in industry, together with an assessment of their value for use in schools, emphasizes the basic principles underlying the new technology and the practical ways in which these can contribute to associated work in computing and other disciplines in the school curriculum. Following a…

Flow Visualization Study of Natural Convection from a Heated Protrusion in a Liquid Filled Rectangular Enclosure.

DTIC Science & Technology

1983-12-01

PROPOSED SOLUTIONS Many papers have been published outlining alternative methods of thermally controlling microelectronic devices. Hannemann [3] describes...Workshop, NSF Grant ENG-7701297, Directions of Heat Transfer in Electronic Equipment, Fy R. C. Chu, 1977. 3. Hannemann , R., "Electronic System Thermal

Sensing systems using chip-based spectrometers

NASA Astrophysics Data System (ADS)

Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

2014-06-01

Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

PubMed Central

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

2016-01-01

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

NASA Astrophysics Data System (ADS)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

PubMed

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

2016-02-03

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

Smallest Nanoelectronic with Atomic Devices with Precise Structures

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

2000-01-01

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Advanced system on a chip microelectronics for spacecraft and science instruments

NASA Astrophysics Data System (ADS)

Paschalidis, Nikolaos P.

2003-01-01

The explosive growth of the modern microelectronics field opens new horizons for the development of new lightweight, low power, and smart spacecraft and science instrumentation systems in the new millennium explorations. Although this growth is mostly driven by the commercial need for low power, portable and computationally intensive products, the applicability is obvious in the space sector. The additional difficulties needed to be overcome for applicability in space include radiation hardness for total ionizing dose and single event effects (SEE), and reliability. Additionally, this new capability introduces a whole new philosophy of design and R&D, with strong implications in organizational and inter-agency program management. One key component specifically developed towards low power, small size, highly autonomous spacecraft systems, is the smart sensor remote input/output (TRIO) chip. TRIO can interface to 32 transducers with current sources/sinks and voltage sensing. It includes front-end analog signal processing, a 10-bit ADC, memory, and standard serial and parallel I/Os. These functions are very useful for spacecraft and subsystems health and status monitoring, and control actions. The key contributions of the TRIO are feasibility of modular architectures, elimination of several miles of wire harnessing, and power savings by orders of magnitude. TRIO freely operates from a single power supply 2.5- 5.5 V with power dissipation <10 mW. This system on a chip device rapidly becomes a NASA and Commercial Space standard as it is already selected by thousands in several new millennium missions, including Europa Orbiter, Mars Surveyor Program, Solar Probe, Pluto Express, Stereo, Contour, Messenger, etc. In the Science Instrumentation field common instruments that can greatly take advantage of the new technologies are: energetic-particle/plasma and wave instruments, imagers, mass spectrometers, X-ray and UV spectrographs, magnetometers, laser rangefinding instruments, etc. Common measurements that apply to many of these instruments are precise time interval measurement and high resolution read-out of solid state detectors. A precise time interval measurement chip was specially developed that achieves ˜100 ps (×10 improvement) time resolution at a power dissipation ˜20 mW (×50 improvement), dead time ˜1.5 μs (×20 improvement), and chip die size 5 mm×5 mm versus two 20 cm×20 cm doubled sided boards. This device is selected as a key enabling technology for several NASA particle, delay line imaging, and laser range finding instruments onboard (NASA Image, Messenger, etc. missions). Another device with universal application is radiation energy read-out from solid state detectors. Multi-channel low-power and end-to-end sensor input—digital output is key for the new generation instruments. The readout channel comprises of a Charge Sensitive Preamplifier with a target sensitivity of ˜1 KeV FWHM at 20 pf detector capacitance, a Shaper Amplifier with programmable time constant/gain, and an ADC. The read-out chip together with the precise time interval chip comprises the essential elements of a common particle spectroscopy instrument. To mention some more applications fast-signal acquisition—and digitization is a very useful function for a category of instrument such as mass spectroscopy and profile laser rangefinding. The single chip approach includes a high bandwidth preamplifier, fast sampling ˜5 ns, analog memory ˜10K locations, 12-bit ADC and serial/parallel I/Os. The wealth of the applications proves the advanced microelectronics field as a key enabling technology for the new millennium space exploration.

Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures

PubMed Central

2014-01-01

Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the EPS are also discussed from the signatures of electronic inhomogeneities as well as some theoretical scenarios, to shed light on understanding this phenomenon. Finally, the perspectives to the future researches in this area are also outlined. PMID:25024686

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, C.T.

2011-02-01

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmapmore » for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.« less

Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

NASA Astrophysics Data System (ADS)

Ju, Byongsun

2005-11-01

As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).

GaN Nanowire Devices: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

High Technology and Job Loss.

ERIC Educational Resources Information Center

Rumberger, Russell

Job loss through technological advancement, particularly technologies based on microelectronics, is increasing for all economic sectors in a nation already hard challenged in world and domestic markets for goods and services. But assessing technology's employment impact remains difficult not only because of its direct and indirect effects and…

Unusual Applications of Ultrasound in Industry

NASA Astrophysics Data System (ADS)

Keilman, George

The application of physical acoustics in industry has been accelerated by increased understanding of the physics of industrial processes, coupled with rapid advancements in transducers, microelectronics, data acquisition, signal processing, and related software fields. This has led to some unusual applications of ultrasound to improve industrial processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B.

The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PVmore » energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.« less

Heat detection and compositions and devices therefor

NASA Technical Reports Server (NTRS)

Rembaum, A. (Inventor)

1975-01-01

Temperature change of a substrate such as a microelectronic component is sensed and detected by means of a mixture of a weak molecular complex of an electron donor compound such as an organic amine and an electron acceptor compound such as nitroaromatic compound. The mixture is encapsulated in a clear binder such as a vinyl resin.

Microelectronics (Electronic Devices) Research, Development, Test, and Evaluation Laboratories with DoD

DTIC Science & Technology

1994-04-08

Range, New Mexico , the National Aeronautics and Space Administration Langley Research Center in Hampton, Virginia, and the Lewis Research Center in...SUBMITTED TO CONGRESS MARCH 1993 40 Appendix £. Excerpt from the Army’s Justification for DoD Base Realignment and Closure SEXt BYSASD iNLi i/Ba

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Microelectronic Precision Optical Element Fabrication

DTIC Science & Technology

2009-01-01

spectra for a 0-25V reverse bias and the device tilted at -35° to the optical axis. Also shown is the diode reverse bias I-V curve . 1530 1540...optical modulator using an MEMS deformable micromirror array," Journal of Lightwave Technology, vol. 24(1), pp. 516-525, January 2006. [4] D. H. Parker, M

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Using federal technology policy to strength the US microelectronics industry

NASA Astrophysics Data System (ADS)

Gover, J. E.; Gwyn, C. W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

Using federal technology policy to strength the US microelectronics industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gover, J.E.; Gwyn, C.W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for andmore » often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.« less

Sub-Shot Noise Power Source for Microelectronics

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry V.; Yu, Nan; Mansour, Kamjou

2011-01-01

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Biomolecular electronics in the twenty-first century.

PubMed

Phadke, R S

2001-01-01

A relentless decrease in the size of silicon-based microelectronics devices is posing problems. The most important among these are limitations imposed by quantum-size effects and instabilities introduced by the effects of thermal fluctuations. These inherent envisaged problems of present-day systems have prompted scientists to look for alternative options. Advancement in the understanding of natural systems such as photosynthetic apparatuses and genetic engineering has enabled attention to be focused on the use of biomolecules. Biomolecules have the advantages of functionality and specificity. The invention of scanning tunneling microscopy and atomic force microscopy has opened up the possibility of addressing and manipulating individual atoms and molecules. Realization of the power of self-assembly principles has opened a novel approach for designing and assembling molecular structures with desired intricate architecture. The utility of molecules such as DNA as a three-dimensional, high-density memory element and its capability for molecular computing have been fully recognized but not yet realized. More time and effort are necessary before devices that can transcend existing ones will become easily available. An overview of the current trends that are envisaged to give rich dividends in the next millennium are discussed.

Advances in Automation Prompt Concern over Increased U.S. Unemployment.

ERIC Educational Resources Information Center

General Accounting Office, Washington, DC.

The General Accounting Office recently studied automation, especially the advent of microelectronics, and its impact on unemployment. The study included identifying available information sources and obtaining opinions on the impact of automation on employment, federal efforts to predict its impact, the dissemination of information about the job…

Controlling sediment collection with data loggers

Treesearch

Rand E. Eads

1991-01-01

Abstract - The proliferation of commercial non-programmable data loggers in the past five years has done little to increase sediment sampling efficiency in remote locations. Recent advances in microelectronics have encouraged the development of commercial, low-power, programmable data loggers at reasonable cost. Although some facets of hydrologic data collection may...

Possible Circuit Architectures for Molecular Nanoelectronics

NASA Astrophysics Data System (ADS)

Likharev, Konstantin

2003-03-01

Chemically-directed self-assembly of molecular devices is apparently the only feasible way to continue the fast progress of microelectronics after its Moore-Laws-based development runs into the wall of physical and economic limitations [1]. The architectures of VLSI circuits using such devices should be substantially fault-tolerant and accommodate other their features including low transconductance. The most significant feature of all promising suggested architectures is the hybridization of three technologies: advanced CMOS, simple nanowire arrays, and molecular devices self-assembling on these wires. Molecular memory arrays may have a simple structure, and their simple prototypes have already been implemented experimentally [2]. In contrast, the logic circuit development is just starting. I will describe a family of neuromorphic networks based on so-called CrossNet arrays [3] that look promising for advanced information processing, starting from fast image recognition and beyond. This architecture may combine very high density (above 10^12 functions per cm^2) and relatively high speed (100-ns-scale latency of cell-to-cell communications) at acceptable power consumption. In future, these features may allow to put an artificial analog of the human cerebral cortex, capable of processing information and (hopefully) self-evolution at 4 to 5 orders of magnitude faster than its biological prototype, on a 20x20 cm^2 silicon wafer. [1] K. Likharev, "Electronics Below 20-nm", see http://rsfq1.physics.sunysb.edu/ likharev/nano/ForMorkoc.pdf. [2] See, e.g, http://nanotechweb.org/articles/news/1/9/8/1. [3] O. Turel and K. Likharev, Int. J. of Circuit Theory and Applications 31, No.1 (2003); see http://rsfq1.physics.sunysb.edu/ likharev/nano/Preprint070102.pdf.

Silicon microelectronic field-emissive devices for advanced display technology

NASA Astrophysics Data System (ADS)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Automatic visual inspection system for microelectronics

NASA Technical Reports Server (NTRS)

Micka, E. Z. (Inventor)

1975-01-01

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

1996 Laboratory directed research and development annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyers, C.E.; Harvey, C.L.; Lopez-Andreas, L.M.

This report summarizes progress from the Laboratory Directed Research and Development (LDRD) program during fiscal year 1996. In addition to a programmatic and financial overview, the report includes progress reports from 259 individual R&D projects in seventeen categories. The general areas of research include: engineered processes and materials; computational and information sciences; microelectronics and photonics; engineering sciences; pulsed power; advanced manufacturing technologies; biomedical engineering; energy and environmental science and technology; advanced information technologies; counterproliferation; advanced transportation; national security technology; electronics technologies; idea exploration and exploitation; production; and science at the interfaces - engineering with atoms.

Ultrafast graphene and carbon nanotube film patterning by picosecond laser pulses

NASA Astrophysics Data System (ADS)

Bobrinetskiy, Ivan I.; Emelianov, Alexey V.; Otero, Nerea; Romero, Pablo M.

2016-03-01

Carbon nanomaterials is among the most promising technologies for advanced electronic applications, due to their extraordinary chemical and physical properties. Nonetheless, after more than two decades of intensive research, the application of carbon-based nanostructures in real electronic and optoelectronic devices is still a big challenge due to lack of scalable integration in microelectronic manufacturing. Laser processing is an attractive tool for graphene device manufacturing, providing a large variety of processes through direct and indirect interaction of laser beams with graphene lattice: functionalization, oxidation, reduction, etching and ablation, growth, etc. with resolution down to the nanoscale. Focused laser radiation allows freeform processing, enabling fully mask-less fabrication of devices from graphene and carbon nanotube films. This concept is attractive to reduce costs, improve flexibility, and reduce alignment operations, by producing fully functional devices in single direct-write operations. In this paper, a picosecond laser with a wavelength of 515 nm and pulse width of 30 ps is used to pattern carbon nanostructures in two ways: ablation and chemical functionalization. The light absorption leads to thermal ablation of graphene and carbon nanotube film under the fluence 60-90 J/cm2 with scanning speed up to 2 m/s. Just under the ablation energy, the two-photon absorption leads to add functional groups to the carbon lattice which change the optical properties of graphene. This paper shows the results of controlled modification of geometrical configuration and the physical and chemical properties of carbon based nanostructures, by laser direct writing.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Adhesion and failure analysis of metal-polymer interface in flexible printed circuits boards

NASA Astrophysics Data System (ADS)

Park, Sanghee; Kim, Ye Chan; Choi, Kisuk; Chae, Heeyop; Suhr, Jonghwan; Nam, Jae-Do

2017-12-01

As device miniaturization in microelectronics is currently requested in the development of high performance device, which usually include highly-integrated metal-polyimide multilayer structures. A redistribution layer (RDL) process is currently emerging as one of the most advance fabrication techniques for on-chip interconnect and packaging. One of the major issues in this process is the poor adhesion of the metal-polyimide interfaces particularly in flexible circuit boards due to the flexibility and bendability of devices. In this study, low pressure O2 plasma treatment was investigated to improve the adhesion of metal-polyimide interfaces, using inductively coupled plasma (ICP) treatment. We identified that the adhesion of metal-polyimide interfaces was greatly improved by the surface roughness control providing 46.1 MPa of shear force in the ball shear test after O2 plasma treatment, compared 14.2 MPa without O2 plasma treatment. It was seemingly due to the fact that the adhesion in metal-polyimide interfaces was improved by a chemical conversion of C=O to C-O bonds and by a ring opening reaction of imide groups, which was confirmed with FT-IR analysis. In the finite element numerical analysis of metal-polyimide interfaces, the O2 plasma treated interface showed that the in-plane stress distribution and the vertical directional deformation agreed well with real failure modes in flexible circuits manufacturing.

Implications of Pb-free microelectronics assembly in aerospace applications

NASA Technical Reports Server (NTRS)

Shapiro, A. A.; Bonner, J. K.; Ogunseitan, D.; Saphores, J. D.; Schoenung, J.

2003-01-01

The commercial microelectronics industry is rapidly moving to completely Pb-free assembly strategies within the next decade. This trend is being driven by existing and proposed legislation in Europe and in Japan. The microelectronics industry has become truly global, as indicated by major U .S. firms who already adopted Pb-free implementation programs. Among these forward-looking firms are AT&T, IBM, Motorola, HP and Intel to name a few.Following Moore's law, advances in microelectronics are happening very rapidly. In many cases, commercial industry is ahead of the aerospace sector in technology. Progress by commercial industry, along with cost, drives the use of Commercial Off-The-Shelf (COTS) parts for military and space applications. We can thus anticipate that the aerospace industry will, at some point, be forced to use Pb-free components and subsystems as part of their standard business practices. In this paper we attempt to provide a snapshot of the commercial industry trends and how they may impact electronics in the aerospace environment. In addition, we also look at different strategies for implementation. Finally we present data collected on a recent NASA project to focus on finding suitable alternatives to eutectic tin-lead solders and solder pastes. The world is moving toward implementation of environmentally friendly manufacturing techniques. The aerospace industry will be forced to deal with issues related with Pb free assembly, either by availability or legislation. This paper provides some insight into some of the tradeoffs that should be considered.

Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

NASA Astrophysics Data System (ADS)

Kundhikanjana, W.; Yang, Y.; Tanga, Q.; Zhang, K.; Lai, K.; Ma, Y.; Kelly, M. A.; Li, X. X.; Shen, Z.-X.

2013-02-01

Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronics industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity distribution of a static random access memory sample. The MIM electronics can also be adjusted to the scanning capacitance microscopy (SCM) mode, allowing both measurements on the same region. Interestingly, while the conventional SCM images match the nominal device structure, the MIM results display certain unexpected features, which originate from a thin layer of the dopant ions penetrating through the protective layers during the heavy implantation steps.

Analysis of space radiation data of semiconductor memories

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1996-01-01

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Laser-machined piezoelectric cantilevers for mechanical energy harvesting.

PubMed

Kim, HyunUk; Bedekar, Vishwas; Islam, Rashed Adnan; Lee, Woo-Ho; Leo, Don; Priya, Shashank

2008-09-01

In this study, we report results on a piezoelectric- material-based mechanical energy-harvesting device that was fabricated by combining laser machining with microelectronics packaging technology. It was found that the laser-machining process did not have significant effect on the electrical properties of piezoelectric material. The fabricated device was tested in the low-frequency regime of 50 to 1000 Hz at constant force of 8 g (where g = 9.8 m/s(2)). The device was found to generate continuous power of 1.13 microW at 870 Hz across a 288.5 kOmega load with a power density of 301.3 microW/cm(3).

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beyne, Sofie, E-mail: sofie.beyne@imec.be; De Wolf, Ingrid; imec, Kapeldreef 75, B-3001 Leuven

The use of 1/f noise measurements is explored for the purpose of finding faster techniques for electromigration (EM) characterization in advanced microelectronic interconnects, which also enable a better understanding of its underlying physical mechanisms. Three different applications of 1/f noise for EM characterization are explored. First, whether 1/f noise measurements during EM stress can serve as an early indicator of EM damage. Second, whether the current dependence of the noise power spectral density (PSD) can be used for a qualitative comparison of the defect concentration of different interconnects and consequently also their EM lifetime t50. Third, whether the activation energiesmore » obtained from the temperature dependence of the 1/f noise PSD correspond to the activation energies found by means of classic EM tests. In this paper, the 1/f noise technique has been used to assess and compare the EM properties of various advanced integration schemes and different materials, as they are being explored by the industry to enable advanced interconnect scaling. More concrete, different types of copper interconnects and one type of tungsten interconnect are compared. The 1/f noise measurements confirm the excellent electromigration properties of tungsten and demonstrate a dependence of the EM failure mechanism on copper grain size and distribution, where grain boundary diffusion is found to be a dominant failure mechanism.« less

Trends in Microfabrication Capabilities & Device Architectures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Todd; Jones, Adam; Lentine, Anthony L.

The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

A New Microelectronics Curriculum Created by Synopsys, Inc.

ERIC Educational Resources Information Center

Goldman, Rich; Bartleson, Karen; Wood, Troy; Melikyan, Vazgen; Wang, Zhi-hua; Chen, Lan

2009-01-01

Rapid changes in integrated circuits (IC) technology and constantly shrinking process geometries demand a new curriculum that meets the contemporary requirements for IC design. This is especially important for 90nm and below technologies and the use of state-of-the-art EDA design tools and advanced IC design techniques. The creation of new…

Education and Training in Japan in the Cybernetic Age. Program Report No. 85-B2.

ERIC Educational Resources Information Center

Muta, Hiromitsu

The introduction of computers and other microelectronic equipment throughout the Japanese economy has not affected employment negatively, owing to economic growth and the adaptability of the workers and business organizations affected. Because rapid advances in technology are making many specialized skills and areas of knowledge obsolete, it is…

A Multimedia Telematics Network for On-the-Job Training, Tutoring and Assessment.

ERIC Educational Resources Information Center

Ferreira, J. M. Martins; MacKinnon, Lachlan; Desmulliez, Marc; Foulk, Patrick

This paper describes an educational multimedia network developed in Advanced Software for Training and Evaluation of Processes (ASTEP). ASTEP started in February 1998 and was set up by a mixed industry-academia consortium with the objective of meeting the educational/training demands of the highly competitive microelectronics/semiconductor…

The Communications Technology Explosion: Now That the School Media Specialist and Everyone Else is a Technologist.

ERIC Educational Resources Information Center

Belland, John C.

1982-01-01

Technological advances in microelectronics-photonics, brain research, and genetic manipulation are discussed, along with their implications for school media programs. Three possible futures for the year 2001 are proffered. Media specialists are urged to adopt only those technologies which truly contribute to efficient management, information…

Radiation Effects: Overview for Space Environment Specialists

NASA Technical Reports Server (NTRS)

Ladbury, Ray

2017-01-01

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

2015 Marine Corps Security Environment Forecast: Futures 2030-2045

DTIC Science & Technology

2015-01-01

The technologies that make the iPhone “smart” were publically funded—the Internet, wireless networks, the global positioning system, microelectronics...Energy Revolution (63 percent);  Internet of Things (ubiquitous sensors embedded in interconnected computing devices) (50 percent);  “Sci-Fi...Neuroscience & artificial intelligence - Sensors /control systems -Power & energy -Human-robot interaction Robots/autonomous systems will become part of the

Performance of High-Reliability Space-Qualified Processors Implementing Software Defined Radios

DTIC Science & Technology

2014-03-01

ADDRESS(ES) AND ADDRESS(ES) Naval Postgraduate School, Department of Electrical and Computer Engineering, 833 Dyer Road, Monterey, CA 93943-5121 8...Chairman Jeffrey D. Paduan Electrical and Computer Engineering Dean of Research iii THIS PAGE...capability. Radiation in space poses a considerable threat to modern microelectronic devices, in particular to the high-performance low-cost computing

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Alpha particle-induced soft errors in microelectronic devices. I

NASA Astrophysics Data System (ADS)

Redman, D. J.; Sega, R. M.; Joseph, R.

1980-03-01

The article provides a tutorial review and trend assessment of the problem of alpha particle-induced soft errors in VLSI memories. Attention is given to an analysis of the design evolution of modern ICs, and the characteristics of alpha particles and their origin in IC packaging are reviewed. Finally, the process of an alpha particle penetrating an IC is examined.

Australian national networked tele-test facility for integrated systems

NASA Astrophysics Data System (ADS)

Eshraghian, Kamran; Lachowicz, Stefan W.; Eshraghian, Sholeh

2001-11-01

The Australian Commonwealth government recently announced a grant of 4.75 million as part of a 13.5 million program to establish a world class networked IC tele-test facility in Australia. The facility will be based on a state-of-the-art semiconductor tester located at Edith Cowan University in Perth that will operate as a virtual centre spanning Australia. Satellite nodes will be located at the University of Western Australia, Griffith University, Macquarie University, Victoria University and the University of Adelaide. The facility will provide vital equipment to take Australia to the frontier of critically important and expanding fields in microelectronics research and development. The tele-test network will provide state of the art environment for the electronics and microelectronics research and the industry community around Australia to test and prototype Very Large Scale Integrated (VLSI) circuits and other System On a Chip (SOC) devices, prior to moving to the manufacturing stage. Such testing is absolutely essential to ensure that the device performs to specification. This paper presents the current context in which the testing facility is being established, the methodologies behind the integration of design and test strategies and the target shape of the tele-testing Facility.

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

NASA Astrophysics Data System (ADS)

King, Sean W.; Simka, Harsono; Herr, Dan; Akinaga, Hiro; Garner, Mike

2013-10-01

Recent discussions concerning the continuation of Moore's law have focused on announcements by several major corporations to transition from traditional 2D planar to new 3D multi-gate field effect transistor devices. However, the growth and progression of the semiconductor microelectronics industry over the previous 4 decades has been largely driven by combined advances in new materials, lithography, and materials related process technologies. Looking forward, it is therefore anticipated that new materials and materials technologies will continue to play a significant role in both the pursuit of Moore's law and the evolution of the industry. In this research update, we discuss and illustrate some of the required and anticipated materials innovations that could potentially lead to the continuation of Moore's law for another decade (or more). We focus primarily on the innovations needed to achieve single digit nanometer technologies and illustrate how at these dimensions not only new materials but new metrologies and computational modeling will be needed.

Modern Focused-Ion-Beam-Based Site-Specific Specimen Preparation for Atom Probe Tomography.

PubMed

Prosa, Ty J; Larson, David J

2017-04-01

Approximately 30 years after the first use of focused ion beam (FIB) instruments to prepare atom probe tomography specimens, this technique has grown to be used by hundreds of researchers around the world. This past decade has seen tremendous advances in atom probe applications, enabled by the continued development of FIB-based specimen preparation methodologies. In this work, we provide a short review of the origin of the FIB method and the standard methods used today for lift-out and sharpening, using the annular milling method as applied to atom probe tomography specimens. Key steps for enabling correlative analysis with transmission electron-beam backscatter diffraction, transmission electron microscopy, and atom probe tomography are presented, and strategies for preparing specimens for modern microelectronic device structures are reviewed and discussed in detail. Examples are used for discussion of the steps for each of these methods. We conclude with examples of the challenges presented by complex topologies such as nanowires, nanoparticles, and organic materials.

An electric artificial heart for clinical use.

PubMed Central

Pierce, W S; Rosenberg, G; Snyder, A J; Pae, W E; Donachy, J H; Waldhausen, J A

1990-01-01

Advances in microelectronics, high-strength magnets, and control system design now make replacement of the heart using an implantable, electrically powered pump feasible. The device described herein is a compact, dual pusher plate unit with valved polyurethane sac-type ventricles positioned at either end. The power unit consists of a small, brushless direct current motor and a motion translator. A microprocessor control system is used to regulate heart beat rate and provide left-right output balance. Bench studies lasting for as long as 1 year have been performed. Heart replacement with the electric heart has been performed in 18 calves since 1984. The longest survivor lived for more than 7 months. Among the causes of termination were component failure, thromboembolic complications, and bleeding. No major problem has been identified that precludes prolonged use of the electric heart. In the future the patient with end-stage heart disease will have an electric artificial heart as one therapeutic option. Images Figs. 1A and 1B. Fig. 3. Fig. 5. PMID:2396885

Challenges and trends in magnetic sensor integration with microfluidics for biomedical applications

NASA Astrophysics Data System (ADS)

Cardoso, S.; Leitao, D. C.; Dias, T. M.; Valadeiro, J.; Silva, M. D.; Chicharo, A.; Silverio, V.; Gaspar, J.; Freitas, P. P.

2017-06-01

Magnetoresistive (MR) sensors have been successfully applied in many technologies, in particular readout electronics and smart systems for multiple signal addressing and readout. When single sensors are used, the requirements relate to spatial resolution and localized field sources. The integration of MR sensors in adaptable media (e.g. flexible, stretchable substrates) offers the possibility to merge the magnetic detection with mechanical functionalities. In addition, the precision of a micrometric needle can benefit greatly from the integration of MR sensors with submicrometric resolution. In this paper, we demonstrate through several detailed examples how advanced MR sensors can be integrated with the systems described above, and also with microfluidic technologies. Here, the challenges of handling liquids over a chip combine with those for miniaturization of microelectronics for MR readout. However, when these are overcome, the result is an integrated system with added functionalities, capable of answering the demand in biomedicine and biochemistry for lab-on-a-chip devices.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Post-Fordist technology and the changing patterns of women's employment in the Third World.

PubMed

Nanda, M

2000-01-01

Literate but unskilled--and largely female--labor has thus far fueled the tremendous increase in manufactured exports of garments and microelectronic products from the Third World to the industrially advanced economies of the North. The future growth of these sectors, however, may require literate and skilled workers--a category in which women are woefully under-represented, especially in the Third World. In the case of the garment industry, defensive innovation in the industrially advanced countries, including automation and flexible management, has initiated a relocation of jobs to these countries or to offshore locations geographically close to their markets. Automated garment production in these countries requires fewer but computer-literate workers. In the case of microelectronics, development policies of East Asian countries and the competitive pressures on start-up companies in the North have led to an increased demand for computer-literate, skilled technicians over the unskilled and overwhelmingly female workforce of manual-assembly workers. Women's continued employment and advancement in these industries globally will depend upon their acquisition of new technical skills. The ratification by the 1995 international women's conference at Beijing of the demand for better access to education and skills training for women, especially in the Third World, is a step in the right direction.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Advanced educational program in optoelectronics for undergraduates and graduates in electronics

NASA Astrophysics Data System (ADS)

Vladescu, Marian; Schiopu, Paul

2015-02-01

The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film.

PubMed

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-22

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

PubMed Central

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses. PMID:26795601

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

NASA Astrophysics Data System (ADS)

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Micahel P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enough to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in.) were manufactured with 6 percent polymeric...

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Michael P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enought to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in) were manufactured with 6 percent polymeric...

Advanced Microelectronics and Materials Programs

DTIC Science & Technology

1991-12-01

of SiC /Si 3N 4 ceramic upon pyrolysis . This material was used to produce adherent coatings on a variety of substrates, and also infiltration ...the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant accomplishments...projects in the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant

Advanced Electronic Technology

DTIC Science & Technology

1977-11-15

Electronics 15 III. Materials Research 15 TV. Microelectronics 16 V. Surface- Wave Technology 16 DATA SYSTEMS DIVISION 2 INTRODUCTION This...Processing Digital Voice Processing Packet Speech Wideband Integrated Voice/Data Technology Radar Signal Processing Technology Nuclear Safety Designs...facilities make it possible to track the status of these jobs, retrieve their job control language listings, and direct a copy of printed or punched

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Thermally-Activated Metal-to-Glass Bonding

NASA Technical Reports Server (NTRS)

Gallagher, B. D.

1986-01-01

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

USSR and Eastern Europe Scientific Abstracts, Electronics and Electrical Engineering, Number 27

DTIC Science & Technology

1977-02-10

input and output conditions. The power section of the circuit is modified to permit triacs and thyristors, respectively, to function. The purpose of the...electronic materials, components, and devices, on circuit theory, pulse techniques, electromagnetic wave propagation, radar, quantum electronic theory...Lasers, Masers, Holography, Quasi-Optical 20 Microelectronics and General Circuit Theory and Information 21 Radars and Radio Wavigati on 22

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alloatti, L., E-mail: luca.alloatti@gmail.com; Cheian, D.; Ram, R. J.

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

Development and Characterization of Novel Garnet and Gold Thin Films for Photonic and Plasmonic Applications

NASA Astrophysics Data System (ADS)

Dulal, Prabesh

The massive amount of data that we produce and share today is the result of advancements made in the semiconductor and magnetic recording industries. As the number of transistors per unit area in integrated circuits continues to rise, power dissipation is reaching alarming levels. Photonics, which essentially is a marriage of semiconductor with laser technology has shown great promise in tackling the issue of power dissipation. The first part of this work focuses on optical isolators, which are essential to halt back-reflections that interfere with the laser source of the photonic systems. Novel terbium iron garnet thin-film optical isolators have been developed on semiconductor platforms and their magneto-optical properties are explored. Modesolver and finite-difference simulations are done to assess their device-feasibility and efficiency. Subsequently, a new photonic device has been developed using current semiconductor microelectronic fabrication techniques. Advancement in magnetic recording is equally vital to keep up with the demand for more data at faster speeds as the current perpendicular recording technique is fast-approaching its areal density limitations. Heat assisted magnetic recording (HAMR) is the next step in the evolution of hard drives. HAMR involves heating of magnetic media using plasmonic near field transducers (NFTs), which must be able to withstand elevated temperatures for extended times. The second part of this work presents a statistical crystallographic study of thermally induced deformation of Au NFTs. Subsequently, the most thermally stable crystallographic orientation for Au NFT has been determined that could lead to significant improvements in HAMR drive reliability.

Fabrication and Deformation of 3D Multilayered Kirigami Microstructures.

PubMed

Humood, Mohammad; Shi, Yan; Han, Mengdi; Lefebvre, Joseph; Yan, Zheng; Pharr, Matt; Zhang, Yihui; Huang, Yonggang; Rogers, John A; Polycarpou, Andreas A

2018-03-01

Mechanically guided 3D microassembly with controlled compressive buckling represents a promising emerging route to 3D mesostructures in a broad range of advanced materials, including single-crystalline silicon (Si), of direct relevance to microelectronic devices. During practical applications, the assembled 3D mesostructures and microdevices usually undergo external mechanical loading such as out-of-plane compression, which can induce damage in or failure of the structures/devices. Here, the mechanical responses of a few mechanically assembled 3D kirigami mesostructures under flat-punch compression are studied through combined experiment and finite element analyses. These 3D kirigami mesostructures consisting of a bilayer of Si and SU-8 epoxy are formed through integration of patterned 2D precursors with a prestretched elastomeric substrate at predefined bonding sites to allow controlled buckling that transforms them into desired 3D configurations. In situ scanning electron microscopy measurement enables detailed studies of the mechanical behavior of these structures. Analysis of the load-displacement curves allows the measurement of the effective stiffness and elastic recovery of various 3D structures. The compression experiments indicate distinct regimes in the compressive force/displacement curves and reveals different geometry-dependent deformation for the structures. Complementary computational modeling supports the experimental findings and further explains the geometry-dependent deformation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Advanced Ceramic Technology for Space Applications at NASA MSFC

NASA Technical Reports Server (NTRS)

Alim, Mohammad A.

2003-01-01

The ceramic processing technology using conventional methods is applied to the making of the state-of-the-art ceramics known as smart ceramics or intelligent ceramics or electroceramics. The sol-gel and wet chemical processing routes are excluded in this investigation considering economic aspect and proportionate benefit of the resulting product. The use of ceramic ingredients in making coatings or devices employing vacuum coating unit is also excluded in this investigation. Based on the present information it is anticipated that the conventional processing methods provide identical performing ceramics when compared to that processed by the chemical routes. This is possible when sintering temperature, heating and cooling ramps, peak temperature (sintering temperature), soak-time (hold-time), etc. are considered as variable parameters. In addition, optional calcination step prior to the sintering operation remains as a vital variable parameter. These variable parameters constitute a sintering profile to obtain a sintered product. Also it is possible to obtain identical products for more than one sintering profile attributing to the calcination step in conjunction with the variables of the sintering profile. Overall, the state-of-the-art ceramic technology is evaluated for potential thermal and electrical insulation coatings, microelectronics and integrated circuits, discrete and integrated devices, etc. applications in the space program.

TID Effects of High-Z Material Spot Shields on FPGA Using MPTB Data

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Crain, S. H.; Mazur, J. E.; Looper, M. D.

2003-01-01

An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

NeuroMEMS: Neural Probe Microtechnologies

PubMed Central

HajjHassan, Mohamad; Chodavarapu, Vamsy; Musallam, Sam

2008-01-01

Neural probe technologies have already had a significant positive effect on our understanding of the brain by revealing the functioning of networks of biological neurons. Probes are implanted in different areas of the brain to record and/or stimulate specific sites in the brain. Neural probes are currently used in many clinical settings for diagnosis of brain diseases such as seizers, epilepsy, migraine, Alzheimer's, and dementia. We find these devices assisting paralyzed patients by allowing them to operate computers or robots using their neural activity. In recent years, probe technologies were assisted by rapid advancements in microfabrication and microelectronic technologies and thus are enabling highly functional and robust neural probes which are opening new and exciting avenues in neural sciences and brain machine interfaces. With a wide variety of probes that have been designed, fabricated, and tested to date, this review aims to provide an overview of the advances and recent progress in the microfabrication techniques of neural probes. In addition, we aim to highlight the challenges faced in developing and implementing ultra-long multi-site recording probes that are needed to monitor neural activity from deeper regions in the brain. Finally, we review techniques that can improve the biocompatibility of the neural probes to minimize the immune response and encourage neural growth around the electrodes for long term implantation studies. PMID:27873894

Evolution from electrophysiologic to hemodynamic monitoring: the story of left atrial and pulmonary artery pressure monitors.

PubMed

Mooney, Deirdre M; Fung, Erik; Doshi, Rahul N; Shavelle, David M

2015-01-01

Heart failure (HF) is a costly, challenging and highly prevalent medical condition. Hospitalization for acute decompensation is associated with high morbidity and mortality. Despite application of evidence-based medical therapies and technologies, HF remains a formidable challenge for virtually all healthcare systems. Repeat hospitalizations for acute decompensated HF (ADHF) can have major financial impact on institutions and resources. Early and accurate identification of impending ADHF is of paramount importance yet there is limited high quality evidence or infrastructure to guide management in the outpatient setting. Historically, ADHF was identified by physical exam findings or invasive hemodynamic monitoring during a hospital admission; however, advances in medical microelectronics and the advent of device-based diagnostics have enabled long-term ambulatory monitoring of HF patients in the outpatient setting. These monitors have evolved from piggybacking on cardiac implantable electrophysiologic devices to standalone implantable hemodynamic monitors that transduce left atrial or pulmonary artery pressures as surrogate measures of left ventricular filling pressure. As technology evolves, devices will likely continue to miniaturize while their capabilities grow. An important, persistent challenge that remains is developing systems to translate the large volumes of real-time data, particularly data trends, into actionable information that leads to appropriate, safe and timely interventions without overwhelming outpatient cardiology and general medical practices. Future directions for implantable hemodynamic monitors beyond their utility in heart failure may include management of other major chronic diseases such as pulmonary hypertension, end stage renal disease and portal hypertension.

Solid State Research.

DTIC Science & Technology

1982-11-22

48 Fabricated in Zone-Melting-Recrystallized Si Films on Si0 2-Coated Si Substrates V 4. MICROELECTRONICS 55 4.1 Charge-Coupled Devices: Time...OMCVD to the CLEFT (cleavage of lateral epitaxial films for transfer) process, a continuous epitaxial GaAs layer 3 Ym thick has been grown over a...complete-island-etch or local-oxidation-of-Si isolation, that were fabricated in zone-melting-recrystallized Si films on Si02-coated Si substrates. As

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Critical issues regarding SEU in avionics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normand, E.; McNulty, P.J.

1993-01-01

The energetic neutrons in the atmosphere cause microelectronics in avionic system to malfunction through a mechanism called single-event upsets (SEUs), and single-event latchup is a potential threat. Data from military and experimental flights as well as laboratory testing indicate that typical non-radiation-hardened 64K and 256K static random access memories (SRAMs) can experience a significant SEU rate at aircraft altitudes. Microelectronics in avionics systems have been demonstrated to be susceptible to SEU. Of all device types, RAMs are the most sensitive because they have the largest number of bits on a chip (e.g., an SRAM may have from 64K to 1Mmore » bits, a microprocessor 3K to 10K bits, and a logic device like an analog-to-digital converter, 12 bits). Avionics designers will need to take this susceptibility into account in current and future designs. A number of techniques are available for dealing with SEU: EDAC, redundancy, use of SEU-hard parts, reset and/or watchdog timer capability, etc. Specifications should be developed to guide avionics vendors in the analysis, prevention, and verification of neutron-induced SEU. Areas for additional research include better definition of the atmospheric neutrons and protons, development of better calculational models (e.g., those used for protons[sup 11]), and better characterization of neutron-induced latchup.« less

A novel monolithic piezoelectric actuated flexure-mechanism based wire clamp for microelectronic device packaging.

PubMed

Liang, Cunman; Wang, Fujun; Tian, Yanling; Zhao, Xingyu; Zhang, Hongjie; Cui, Liangyu; Zhang, Dawei; Ferreira, Placid

2015-04-01

A novel monolithic piezoelectric actuated wire clamp is presented in this paper to achieve fast, accurate, and robust microelectronic device packaging. The wire clamp has compact, flexure-based mechanical structure and light weight. To obtain large and robust jaw displacements and ensure parallel jaw grasping, a two-stage amplification composed of a homothetic bridge type mechanism and a parallelogram leverage mechanism was designed. Pseudo-rigid-body model and Lagrange approaches were employed to conduct the kinematic, static, and dynamic modeling of the wire clamp and optimization design was carried out. The displacement amplification ratio, maximum allowable stress, and natural frequency were calculated. Finite element analysis (FEA) was conducted to evaluate the characteristics of the wire clamp and wire electro discharge machining technique was utilized to fabricate the monolithic structure. Experimental tests were carried out to investigate the performance and the experimental results match well with the theoretical calculation and FEA. The amplification ratio of the clamp is 20.96 and the working mode frequency is 895 Hz. Step response test shows that the wire clamp has fast response and high accuracy and the motion resolution is 0.2 μm. High speed precision grasping operations of gold and copper wires were realized using the wire clamper.

First-principles investigations of proton generation in α-quartz

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Song, Yu; Zuo, Xu

2018-03-01

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen (H2) is present, the proton generation can be enhanced by cracking the H2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly-hydrogenated defects. In particular, a fully passivated {E}2^{\\prime } center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices. Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201501), the National Natural Science Foundation China (Grant No. NSFC 11404300), and the National Basic Research Program of China (Grant No. 2011CB606405).

Terrestrial Sources of X-Ray Radiation and Their Effects on NASA Flight Hardware

NASA Technical Reports Server (NTRS)

Kniffin, Scott

2016-01-01

X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.

Symmetric miniaturized heating system for active microelectronic devices.

PubMed

McCracken, Michael; Mayer, Michael; Jourard, Isaac; Moon, Jeong-Tak; Persic, John

2010-07-01

To qualify interconnect technologies such as microelectronic fine wire bonds for mass production of integrated circuit (IC) packages, it is necessary to perform accelerated aging tests, e.g., to age a device at an elevated temperature or to subject the device to thermal cycling and measure the decrease of interconnect quality. There are downsides to using conventional ovens for this as they are relatively large and have relatively slow temperature change rates, and if electrical connections are required between monitoring equipment and the device being heated, they must be located inside the oven and may be aged by the high temperatures. Addressing these downsides, a miniaturized heating system (minioven) is presented, which can heat individual IC packages containing the interconnects to be tested. The core of this system is a piece of copper cut from a square shaped tube with high resistance heating wire looped around it. Ceramic dual in-line packages are clamped against either open end of the core. One package contains a Pt100 temperature sensor and the other package contains the device to be aged placed in symmetry to the temperature sensor. According to the temperature detected by the Pt100, a proportional-integral-derivative controller adjusts the power supplied to the heating wire. The system maintains a dynamic temperature balance with the core hot and the two symmetric sides with electrical connections to the device under test at a cooler temperature. Only the face of the package containing the device is heated, while the socket holding it remains below 75 degrees C when the oven operates at 200 degrees C. The minioven can heat packages from room temperature up to 200 degrees C in less than 5 min and maintain this temperature at 28 W power. During long term aging, a temperature of 200 degrees C was maintained for 1120 h with negligible resistance change of the heating wires after 900 h (heating wire resistance increased 0.2% over the final 220 h). The device is also subjected to 5700 thermal cycles between 55 and 195 degrees C, demonstrating reliability under thermal cycling.

Moore's law and the impact on trusted and radiation-hardened microelectronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Kwok Kee

2011-12-01

In 1965 Gordon Moore wrote an article claiming that integrated circuit density would scale exponentially. His prediction has remained valid for more than four decades. Integrated circuits have changed all aspects of everyday life. They are also the 'heart and soul' of modern systems for defense, national infrastructure, and intelligence applications. The United States government needs an assured and trusted microelectronics supply for military systems. However, migration of microelectronics design and manufacturing from the United States to other countries in recent years has placed the supply of trusted microelectronics in jeopardy. Prevailing wisdom dictates that it is necessary to usemore » microelectronics fabricated in a state-of-the-art technology for highest performance and military system superiority. Close examination of silicon microelectronics technology evolution and Moore's Law reveals that this prevailing wisdom is not necessarily true. This presents the US government the possibility of a totally new approach to acquire trusted microelectronics.« less

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

Microelectronics, radiation, and superconductivity.

PubMed Central

Gochfeld, M

1990-01-01

Among the costs of technology are health hazards that face employees and consumers. New advances in the highly competitive field of microelectronics involve exposure to a variety of hazards such as gallium arsenide. Small high-technology industries appear unprepared to invest in health and safety. Although stray electromagnetic fields are not a new development, researchers are beginning to assemble data indicating that such fields pose a significant cancer risk under certain circumstances. Data have been obtained on fields associated with power lines on the one hand and consumer products on the other. Although not conclusive, the data are sufficient to warrant carefully designed research into the risks posed by electromagnetic fields. Because the scientific issues require research, there is a need to make basic social value decisions that will determine which technologies will be developed and which ones may be set aside because of their danger at the present time. PMID:2401267

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

New computing systems, future computing environment, and their implications on structural analysis and design

NASA Technical Reports Server (NTRS)

Noor, Ahmed K.; Housner, Jerrold M.

1993-01-01

Recent advances in computer technology that are likely to impact structural analysis and design of flight vehicles are reviewed. A brief summary is given of the advances in microelectronics, networking technologies, and in the user-interface hardware and software. The major features of new and projected computing systems, including high performance computers, parallel processing machines, and small systems, are described. Advances in programming environments, numerical algorithms, and computational strategies for new computing systems are reviewed. The impact of the advances in computer technology on structural analysis and the design of flight vehicles is described. A scenario for future computing paradigms is presented, and the near-term needs in the computational structures area are outlined.

n-Type diamond and method for producing same

DOEpatents

Anderson, Richard J.

2002-01-01

A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

Justification of Estimates for Fiscal Year 1983 Submitted to Congress.

DTIC Science & Technology

1982-02-01

hierarchies to aid software production; completion of the components of an adaptive suspension vehicle including a storage energy unit, hydraulics, laser...and corrosion (long storage times), and radiation-induced breakdown. Solid- lubricated main engine bearings for cruise missile engines would offer...environments will cause "soft error" (computational and memory storage errors) in advanced microelectronic circuits. Research on high-speed, low-power

A life in science

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mott, N.

This book is an autobiography by the 1977 Nobel Prize Winner for Physics. It spans a period of extensive development in physics, such as the beginning of quantum mechanics and its subsequent applications to solid-state physics. The author reveals his insights that have advanced microelectronics, computers and telecommunications and explains his views on issues such as the role of religion for scientists and the nuclear weapons debate.

Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

DTIC Science & Technology

1991-01-01

scanning, wafer curvature technique to study the kinetics of crystallization of amorphous silicon. When a thin film of amorphous silicon crystallizes...the film and the kinetics of the crystallization process. We find the tensile stress in the film to increase by about 500 MPa when crystallization...occurs. This is a very large stress that could have significance for device processing and applications. By measuring the kinetics of this stress change

Perspectives on integrated modeling of transport processes in semiconductor crystal growth

NASA Technical Reports Server (NTRS)

Brown, Robert A.

1992-01-01

The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

DTIC Science & Technology

2010-01-01

TERMS MEMS , acoustic wave devices, acoustic wave sensors Qing-Ming Wang University of Pittsburgh 123 University Place University Club Pittsburgh, PA...resonators,” Proc. SPIE Vol. 6223, 62230I, Micro ( MEMS ) and Nanotechnologies for Space Applications; Thomas George, Zhong-Yang Cheng; Eds. (May...microelectromechanical resonators has been recognized as a technological challenge in the current microelectronics and MEMS development. The

Demonstration of single crystal growth via solid-solid transformation of a glass

DOE PAGES

Savytskii, Dmytro; Knorr, Brian; Dierolf, Volkmar; ...

2016-03-18

Many advanced technologies have relied on the availability of single crystals of appropriate material such as silicon for microelectronics or superalloys for turbine blades. Similarly, many promising materials could unleash their full potential if they were available in a single crystal form. However, the current methods are unsuitable for growing single crystals of these oftentimes incongruently melting, unstable or metastable materials. Here we demonstrate a strategy to overcome this hurdle by avoiding the gaseous or liquid phase, and directly converting glass into a single crystal. Specifically, Sb 2S 3 single crystals are grown in Sb-S-I glasses as an example ofmore » this approach. In this first unambiguous demonstration of an all-solid-state glass → crystal transformation, extraneous nucleation is avoided relative to crystal growth via spatially localized laser heating and inclusion of a suitable glass former in the composition. Lastly, the ability to fabricate patterned single-crystal architecture on a glass surface is demonstrated, providing a new class of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.« less

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

An integrated CMOS high voltage supply for lab-on-a-chip systems.

PubMed

Behnam, M; Kaigala, G V; Khorasani, M; Marshall, P; Backhouse, C J; Elliott, D G

2008-09-01

Electrophoresis is a mainstay of lab-on-a-chip (LOC) implementations of molecular biology procedures and is the basis of many medical diagnostics. High voltage (HV) power supplies are necessary in electrophoresis instruments and are a significant part of the overall system cost. This cost of instrumentation is a significant impediment to making LOC technologies more widely available. We believe one approach to overcoming this problem is to use microelectronic technology (complementary metal-oxide semiconductor, CMOS) to generate and control the HV. We present a CMOS-based chip (3 mm x 2.9 mm) that generates high voltages (hundreds of volts), switches HV outputs, and is powered by a 5 V input supply (total power of 28 mW) while being controlled using a standard computer serial interface. Microchip electrophoresis with laser induced fluorescence (LIF) detection is implemented using this HV CMOS chip. With the other advancements made in the LOC community (e.g. micro-fluidic and optical devices), these CMOS chips may ultimately enable 'true' LOC solutions where essentially all the microfluidics, photonics and electronics are on a single chip.

The microstructure matters: breaking down the barriers with single crystalline silicon as negative electrode in Li-ion batteries

PubMed Central

Sternad, M.; Forster, M.; Wilkening, M.

2016-01-01

Silicon-based microelectronics forms a major foundation of our modern society. Small lithium-ion batteries act as the key enablers of its success and have revolutionised portable electronics used in our all everyday’s life. While large-scale LIBs are expected to help establish electric vehicles, on the other end of device size chip-integrated Si-based μ-batteries may revolutionise microelectronics once more. In general, Si is regarded as one of the white hopes since it offers energy densities being ten times higher than conventional anode materials. The use of monocrystalline, wafer-grade Si, however, requires several hurdles to be overcome since it its volume largely expands during lithiation. Here, we will show how 3D patterned Si wafers, prepared by the sophisticated techniques from semiconductor industry, are to be electrochemically activated to overcome these limitations and to leverage their full potential being reflected in stable charge capacities (>1000 mAhg–1) and high Coulomb efficiencies (98.8%). PMID:27531589

Recent patents on Cu/low-k dielectrics interconnects in integrated circuits.

PubMed

Jiang, Qing; Zhu, Yong F; Zhao, Ming

2007-01-01

In past decades, the development of microelectronics has moved along with constant speed of scaling to maximize transistor density as driven by the need for electrical and functional performance. For further development, the propagation velocity of electromagnetic waves becomes increasingly important due to their unyielding constraints on interconnect delay. To minimize it, it was forced to the introduction of the Cu/low-k dielectric interconnects to very large scale integrated circuits (VLSI) where k denotes the dielectric constant. In addition, reliable barrier structures, which are the thinnest part among the device parts to maximize space availability for the actual Cu IWs, are required to prevent penetration of different materials. In light of the above statements, this review will focus recent patents and some studies on Cu interconnects including Cu interconnect wires, low-k dielectrics and related barrier materials as well manufacturing techniques in VLSI, which are one of the most essential concerns in microelectronic industry and decides the further development of VLSI. In addition, possible future development in this field is considered.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

[Application of microelectronics CAD tools to synthetic biology].

PubMed

Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

2017-02-01

Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

Finite Element Modeling of Micromachined MEMS Photon Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-09-20

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We havemore » used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.« less

Bringing order to the world of nanowire devices by phase shift lithography.

PubMed

Subannajui, Kittitat; Güder, Firat; Zacharias, Margit

2011-09-14

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Finite element modeling of micromachined MEMS photon devices

NASA Astrophysics Data System (ADS)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Structural health monitoring system for bridges based on skin-like sensor

NASA Astrophysics Data System (ADS)

Loupos, Konstantinos; Damigos, Yannis; Amditis, Angelos; Gerhard, Reimund; Rychkov, Dmitry; Wirges, Werner; Schulze, Manuel; Lenas, Sotiris-Angelos; Chatziandreoglou, Christos; Malliou, Christina M.; Tsaoussidis, Vassilis; Brady, Ken; Frankenstein, Bernd

2017-09-01

Structural health monitoring activities are of primal importance for managing transport infrastructure, however most SHM methodologies are based on point-based sensors that have limitations in terms of their spatial positioning requirements, cost of development and measurement range. This paper describes the progress on the SENSKIN EC project whose objective is to develop a dielectric-elastomer and micro-electronics-based sensor, formed from a large highly extensible capacitance sensing membrane supported by advanced microelectronic circuitry, for monitoring transport infrastructure bridges. Such a sensor could provide spatial measurements of strain in excess of 10%. The actual sensor along with the data acquisition module, the communication module and power electronics are all integrated into a compact unit, the SENSKIN device, which is energy-efficient, requires simple signal processing and it is easy to install over various surface types. In terms of communication, SENSKIN devices interact with each other to form the SENSKIN system; a fully distributed and autonomous wireless sensor network that is able to self-monitor. SENSKIN system utilizes Delay-/Disruption-Tolerant Networking technologies to ensure that the strain measurements will be received by the base station even under extreme conditions where normal communications are disrupted. This paper describes the architecture of the SENSKIN system and the development and testing of the first SENSKIN prototype sensor, the data acquisition system, and the communication system.

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

NASA Innovation Builds Better Nanotubes

NASA Technical Reports Server (NTRS)

2008-01-01

Nanotailor Inc., based in Austin, Texas, licensed Goddard Space Flight Center's unique single-walled carbon nanotube (SWCNT) fabrication process with plans to make high-quality, low-cost SWCNTs available commercially. Carbon nanotubes are being used in a wide variety of applications, and NASA's improved production method will increase their applicability in medicine, microelectronics, advanced materials, and molecular containment. Nanotailor built and tested a prototype based on Goddard's process, and is using this technique to lower the cost and improve the integrity of nanotubes, offering a better product for use in biomaterials, advanced materials, space exploration, highway and building construction, and many other applications.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

NASA IVHM Technology Experiment for X-vehicles (NITEX)

NASA Technical Reports Server (NTRS)

Sandra, Hayden; Bajwa, Anupa

2001-01-01

The purpose of the NASA IVHM Technology Experiment for X-vehicles (NITEX) is to advance the development of selected IVHM technologies in a flight environment and to demonstrate the potential for reusable launch vehicle ground processing savings. The technologies to be developed and demonstrated include system-level and detailed diagnostics for real-time fault detection and isolation, prognostics for fault prediction, automated maintenance planning based on diagnostic and prognostic results, and a microelectronics hardware platform. Complete flight The Evolution of Flexible Insulation as IVHM consists of advanced sensors, distributed data acquisition, data processing that includes model-based diagnostics, prognostics and vehicle autonomy for control or suggested action, and advanced data storage. Complete ground IVHM consists of evolved control room architectures, advanced applications including automated maintenance planning and automated ground support equipment. This experiment will advance the development of a subset of complete IVHM.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

The RACE (R&D in Advanced Communications Technologies for Europe) Program of the European Communities

DTIC Science & Technology

1988-08-17

asynchronous TDM for all channels; and hybrid solu- However, since technoeconomic considerations may im- tions, possibly involving dynamic rearranging. A...qualitative electronic switching are favored: CMOS, silicon bipolar, analysis , under the headings: timing of introduction, net- and gallium arsenide...or ring configurations. tem requirements. Project 1029. In this project an up-to-date analysis Microelectronic Components was made of the state of the

JPRS report: Science and Technology. Europe and Latin America

NASA Astrophysics Data System (ADS)

1988-01-01

Articles from the popular and trade press are included on the following subjects: advanced materials, aerospace industry, automotive industry, biotechnology, computers, factory automation and robotics, microelectronics, and science and technology policy. The aerospace articles discuss briefly and in a nontechnical way the SAGEM bubble memories for space applications, Ariane V new testing facilities, innovative technologies of TDF-1 satellite, and the restructuring of the Aviation Division at France's Aerospatiale.

Toxic gases used in the microelectronics industry.

PubMed

Wald, P H; Becker, C E

1986-01-01

Toxic gases are among the most dangerous materials used in manufacturing semiconductors and related devices. The storage, handling, and disposal of these gases pose a major hazard to workers and to communities located near high-technology companies. It must be anticipated that accidents, acts of terrorism, and natural calamities will result in exposure. Flammability, corrosiveness, and concentration must be considered, as well as the immediate danger to life and known human health effects of the gases used.

Supply Chain Risk Management: An Introduction to the Credible Threat

DTIC Science & Technology

2016-08-01

connected. All we have to do is pull out our phones, tablets, laptops or any other similar device and get the information we need virtually...with the sup­ ply chain, especially when it comes to the use of electronics, computers and other computerized components. The attempt to remove or...Trusted State­of­the­Art Microelectronics Strategy Study ,“ July 2015, Potomac Institute for Policy Studies report. Figure 2. An Organization’s

Design, processing and testing of LSI arrays: Hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.

1979-01-01

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Assessment of intrinsic small signal parameters of submicron SiC MESFETs

NASA Astrophysics Data System (ADS)

Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

2018-01-01

In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

La cryomicroélectronique

NASA Astrophysics Data System (ADS)

Kamarinos, Georges

1991-02-01

The Integrated Circuits and the microelectronics devices working in temperatures lower than 100 K are studied by cryomicroelectronics. In this short review paper the development of this new branch of microelectronics is described. Particularly the advantages and the drawbacks of the cooling of integrated circuits and devices are listed. Then the current research axis are given. They correspond to two different approaches ; the " classic " one which is based to the materials used in the present VLSI technology and the innovative way which aims at using new HT_c superconductors. L'objet de la cryomicroélectronique est l'étude des Circuits Intégrés et des composants microélectroniques à des températures inférieures à 100 K. Cet article de revue décrit très brièvement l'état d'avancement des connaissances relatives aux avantages et aux inconvénients des composants et Circuits Intégrés au Silicium fonctionnant à basse température. Ensuite on expose les axes de recherche actuels ; ils sont relatifs à deux approches : l'une, classique, est basée sur les matériaux utilisés actuellement dans la technologie de l'intégration à grande échelle; l'autre, novatrice, vise à utiliser les matériaux supraconducteurs à haute température critique.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teherani, James T., E-mail: j.teherani@columbia.edu; Agarwal, Sapan; Chern, Winston

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, wemore » show that Auger generation imposes a fundamental limit on ultimate TFET performance.« less

Microelectronics-Based Biosensors Dedicated to the Detection of Neurotransmitters: A Review

PubMed Central

Mirzaei, Maryam; Sawan, Mohamad

2014-01-01

Dysregulation of neurotransmitters (NTs) in the human body are related to diseases such as Parkinson's and Alzheimer's. The mechanisms of several neurological disorders, such as epilepsy, have been linked to NTs. Because the number of diagnosed cases is increasing, the diagnosis and treatment of such diseases are important. To detect biomolecules including NTs, microtechnology, micro and nanoelectronics have become popular in the form of the miniaturization of medical and clinical devices. They offer high-performance features in terms of sensitivity, as well as low-background noise. In this paper, we review various devices and circuit techniques used for monitoring NTs in vitro and in vivo and compare various methods described in recent publications. PMID:25264957

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Direct on-chip DNA synthesis using electrochemically modified gold electrodes as solid support

NASA Astrophysics Data System (ADS)

Levrie, Karen; Jans, Karolien; Schepers, Guy; Vos, Rita; Van Dorpe, Pol; Lagae, Liesbet; Van Hoof, Chris; Van Aerschot, Arthur; Stakenborg, Tim

2018-04-01

DNA microarrays have propelled important advancements in the field of genomic research by enabling the monitoring of thousands of genes in parallel. The throughput can be increased even further by scaling down the microarray feature size. In this respect, microelectronics-based DNA arrays are promising as they can leverage semiconductor processing techniques with lithographic resolutions. We propose a method that enables the use of metal electrodes for de novo DNA synthesis without the need for an insulating support. By electrochemically functionalizing gold electrodes, these electrodes can act as solid support for phosphoramidite-based synthesis. The proposed method relies on the electrochemical reduction of diazonium salts, enabling site-specific incorporation of hydroxyl groups onto the metal electrodes. An automated DNA synthesizer was used to couple phosphoramidite moieties directly onto the OH-modified electrodes to obtain the desired oligonucleotide sequence. Characterization was done via cyclic voltammetry and fluorescence microscopy. Our results present a valuable proof-of-concept for the integration of solid-phase DNA synthesis with microelectronics.

Numerical Simulation and Experiments of Fatigue Crack Growth in Multi-Layer Structures of MEMS and Microelectronic Devices

DTIC Science & Technology

2006-12-01

ABAQUS by use of the UEL subroutine feature. The damage variable was defined on averaged variables per element (Roe and Siegmund, 2003). The location of... thermal expansion (CTE) which is similar to silicon. During the anodic bonding process, the stack of silicon and glass wafers is placed on a hot plate and...Brinckmann, T. Siegmund, "Modeling fatigue crack growth with ABAQUS ," 2005 ABAQUS Fracture Review Team Meeting, Providence, RI, (2005). 8. S

1997 International Semiconductor Device Research Symposium (4th) Proceedings, Held in Charlottesville, Virginia on December 10-13, 1997

DTIC Science & Technology

1998-01-01

Matagne1𔃼, Jean -Pierre Leburton1 Jacques Destine2, Guy Cantraine2 1Beckman Institute, University of Illinois at Urbana-Champaign , Urbana, IL 61820...PROCESSES R. Peter Smith, Suzanne C. Martin, Moonil Kim, Jean Bruston, Imran Mehdi, Dexter Humphrey, Michael Gaidis, Neal Erickson*, and Peter H...SEV/VSE, Feb. 1981 G. Galup-Montoro, M. Schneider, S. Acosta, R. Pinto , Proc. Brazilian Microelectronics Conference SBMICRO󈨤,1996. A. Cunha, O

Long working distance interference microscope

DOEpatents

Sinclair, Michael B.; DeBoer, Maarten P.; Smith, Norman F.

2004-04-13

Disclosed is a long working distance interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. The long working distance of 10-30 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-D height profiles of MEMS test structures to be acquired across an entire wafer. A well-matched pair of reference/sample objectives is not required, significantly reducing the cost of this microscope, as compared to a Linnik microinterferometer.

JPRS report: Science and technology. Europe and Latin America

NASA Astrophysics Data System (ADS)

1988-01-01

Articles from the popular and trade press of Western Europe and Latin America are presented on advanced materials, aerospace and civial aviation, computers, defense industries, factory automation and robotics, lasers, senors, optics microelectronics, science and technology policy, biotechnology, marine technology, and nuclear developments. The aerospace articles include an overview of Austrian space activities and plans and a report on a panel of West German experts recommending against self-sufficiency for the Airbus.

Quantifying patient adherence during active orthodontic treatment with removable appliances using microelectronic wear-time documentation.

PubMed

Schäfer, Katharina; Ludwig, Björn; Meyer-Gutknecht, Hannes; Schott, Timm Cornelius

2015-02-01

The aim of this study was to quantify the wear times of removable appliances during active orthodontic treatment. The wear times of 141 orthodontic patients treated with active removable appliances in different locations were documented over a period of 3 months using an incorporated microsensor. Gender, age, treatment location, health insurance status, and type of device were evaluated with respect to wear time. Significant associations between wear times and patient factors were calculated using non-parametric tests. The median daily wear time was 9.7 hours/day for the entire cohort, far less than the 15 hours/day prescribed. Younger patients wore their appliances for longer than older patients (7-9 years 12.1 hours/day, 10-12 years 9.8 hours/day, and 13-15 years 8.5 hours/day; P < 0.0001). The median wear time for females (10.6 hours/day) was 1.4 hours/day longer than males (9.3 hours/day; P = 0.017). Patients treated at different locations wore their devices with a difference of up to 5.0 hours/day. Privately insured patients had significantly longer median wear times than statutorily insured patients. No significant difference in wear time was noted according to device type. The daily wear time of removable appliances during the active phase of orthodontic therapy can be routinely quantified using integrated microelectronic sensors. The relationship between orthodontist and patient seems to play a key role in patient adherence. Wear-time documentation provides the basis for more individualized wear-time recommendations for patients with removable appliances. This could result in a more efficient, shorter, and less painful orthodontic therapy. © The Author 2014. Published by Oxford University Press on behalf of the European Orthodontic Society. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Texture in thin film silicides and germanides: A review

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C.

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is ofmore » utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.« less

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Texture in thin film silicides and germanides: A review

NASA Astrophysics Data System (ADS)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

[Management of hearing impairment in adults].

PubMed

Frachet, Bruno; Poncet-Wallet, Christine; Ernst, Imilie; Quéruel, Françoise; Eshraghi, Adrien

2009-10-20

Hearing impairment, mainly the deafness with possible distortions, assorted with tinnitus concerns about 4 million of the French population. It can be of variable severity. Deafness is an invisible disability until we must answer a question. The permanent improvement of the computer and microelectronics sciences benefit to the prosthetic devices: cochlear implants compensate for complete hearing loss, hearing aids are hidden by being miniaturized, being partially or totally implantable. The management of disability is not limited to this material part: human assistance and assistive devices are part of the armory. Rest to continue and to increase the financial support. This claim is obviously not specific to disability hearing although the hearing aid is only refunded 138 Euro per device for a unit cost from 1300 Euro to 2500 Euro with an observed lifetime of 4 or 5 years.

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

Scaled CMOS Technology Reliability Users Guide

NASA Technical Reports Server (NTRS)

White, Mark

2010-01-01

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Adaptive Mesh Refinement for Microelectronic Device Design

NASA Technical Reports Server (NTRS)

Cwik, Tom; Lou, John; Norton, Charles

1999-01-01

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

Thermal Characterization of Nanostructures and Advanced Engineered Materials

NASA Astrophysics Data System (ADS)

Goyal, Vivek Kumar

Continuous downscaling of Si complementary metal-oxide semiconductor (CMOS) technology and progress in high-power electronics demand more efficient heat removal techniques to handle the increasing power density and rising temperature of hot spots. For this reason, it is important to investigate thermal properties of materials at nanometer scale and identify materials with the extremely large or extremely low thermal conductivity for applications as heat spreaders or heat insulators in the next generation of integrated circuits. The thin films used in microelectronic and photonic devices need to have high thermal conductivity in order to transfer the dissipated power to heat sinks more effectively. On the other hand, thermoelectric devices call for materials or structures with low thermal conductivity because the performance of thermoelectric devices is determined by the figure of merit Z=S2sigma/K, where S is the Seebeck coefficient, K and sigma are the thermal and electrical conductivity, respectively. Nanostructured superlattices can have drastically reduced thermal conductivity as compared to their bulk counterparts making them promising candidates for high-efficiency thermoelectric materials. Other applications calling for thin films with low thermal conductivity value are high-temperature coatings for engines. Thus, materials with both high thermal conductivity and low thermal conductivity are technologically important. The increasing temperature of the hot spots in state-of-the-art chips stimulates the search for innovative methods for heat removal. One promising approach is to incorporate materials, which have high thermal conductivity into the chip design. Two suitable candidates for such applications are diamond and graphene. Another approach is to integrate the high-efficiency thermoelectric elements for on-spot cooling. In addition, there is strong motivation for improved thermal interface materials (TIMs) for heat transfer from the heat-generating chip to heat-sinking units. This dissertation presents results of the experimental investigation and theoretical interpretation of thermal transport in the advanced engineered materials, which include thin films for thermal management of nanoscale devices, nanostructured superlattices as promising candidates for high-efficiency thermoelectric materials, and improved TIMs with graphene and metal particles as fillers providing enhanced thermal conductivity. The advanced engineered materials studied include chemical vapor deposition (CVD) grown ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on Si substrates, directly integrated nanocrystalline diamond (NCD) films on GaN, free-standing polycrystalline graphene (PCG) films, graphene oxide (GOx) films, and "pseudo-superlattices" of the mechanically exfoliated Bi2Te3 topological insulator films, and thermal interface materials (TIMs) with graphene fillers.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

Smart Materials for Electromagnetic and Optical Applications

NASA Astrophysics Data System (ADS)

Ramesh, Prashanth

The research presented in this dissertation focuses on the development of solid-state materials that have the ability to sense, act, think and communicate. Two broad classes of materials, namely ferroelectrics and wideband gap semiconductors were investigated for this purpose. Ferroelectrics possess coupled electromechanical behavior which makes them sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory was developed. This model was then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is shown to compare well with published experimental data and other related models in literature. A model relating ferroelectric loss tangent to the applied electric field and temperature is also discussed. Subsequently, relationships expressing the dependence of antenna operating frequency and radiation efficiency on those external physical quantities are described. These relationships demonstrate the tunability of load-bearing antenna structures that integrate ferroelectrics when they are subjected to mechanical and thermal loads. In order to address the inability of ferroelectrics to integrate microelectronic devices, a feature needed in a material capable of sensing, acting, thinking and communicating, the material Gallium Nitride (GaN) is pursued next. There is an increasing utilization of GaN in the area of microelectronics due to the advantages it offers over other semiconductors. This dissertation demonstrates GaN as a candidate material well suited for novel microelectromechanical systems. The potential of GaN for MEMS is demonstrated via the design, analysis, fabrication, testing and characterization of an optical microswitch device actuated by piezoelectric and electrostrictive means. The piezoelectric and electrostrictive properties of GaN and its differences from common piezoelectrics are discussed before elaborating on the device configuration used to implement the microswitch device. Next, the development of two recent fabrication technologies, Photoelectrochemical etch and Bias-enabled Dark Electrochemical etch, used to realize the 3-dimensional device structure in GaN are described in detail. Finally, an ultra-low-cost, laser-based, non-contact approach to test and characterize the microswitch device is described, followed by the device testing results.

The role of nanotechnology and nano and micro-electronics in monitoring and control of cardiovascular diseases and neurological disorders

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2007-04-01

Nanotechnology has been broadly defined as the one for not only the creation of functional materials and devices as well as systems through control of matter at the scale of 1-100 nm, but also the exploitation of novel properties and phenomena at the same scale. Growing needs in the point-of-care (POC) that is an increasing market for improving patient's quality of life, are driving the development of nanotechnologies for diagnosis and treatment of various life threatening diseases. This paper addresses the recent development of nanodiagnostic sensors and nanotherapeutic devices with functionalized carbon nanotube and/or nanowire on a flexible organic thin film electronics to monitor and control of the three leading diseases namely 1) neurodegenerative diseases, 2) cardiovascular diseases, and 3) diabetes and metabolic diseases. The sensors developed include implantable and biocompatible devices, light weight wearable devices in wrist-watches, hats, shoes and clothes. The nanotherapeutics devices include nanobased drug delivery system. Many of these sensors are integrated with the wireless systems for the remote physiological monitoring. The author's research team has also developed a wireless neural probe using nanowires and nanotubes for monitoring and control of Parkinson's disease. Light weight and compact EEG, EOG and EMG monitoring system in a hat developed is capable of monitoring real time epileptic patients and patients with neurological and movement disorders using the Internet and cellular network. Physicians could be able to monitor these signals in realtime using portable computers or cell phones and will give early warning signal if these signals cross a pre-determined threshold level. In addition the potential impact of nanotechnology for applications in medicine is that, the devices can be designed to interact with cells and tissues at the molecular level, which allows high degree of functionality. Devices engineered at nanometer scale imply a controlled manipulation of individual molecules and atoms that can interact with the human body at sub-cellular level. The recent progress in microelectronics and nanosensors crates very powerful tools for the early detection and diagnosis. The nanowire integrated potassium and dopamine sensors are ideal for the monitoring and control of many cardiovascular diseases and neurological disorders. Selected movies illustrating the applications of nanodevices to patients will be shown at the talk.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Integrated electronics and fluidic MEMS for bioengineering

NASA Astrophysics Data System (ADS)

Fok, Ho Him Raymond

Microelectromechanical systems (MEMS) and microelectronics have become enabling technologies for many research areas. This dissertation presents the use of fluidic MEMS and microelectronics for bioengineering applications. In particular, the versatility of MEMS and microelectronics is highlighted by the presentation of two different applications, one for in-vitro study of nano-scale dynamics during cell division and one for in-vivo monitoring of biological activities at the cellular level. The first application of an integrated system discussed in this dissertation is to utilize fluidic MEMS for studying dynamics in the mitotic spindle, which could lead to better chemotherapeutic treatments for cancer patients. Previous work has developed the use of electrokinetic phenomena on the surface of a glass-based platform to assemble microtubules, the building blocks of mitotic spindles. Nevertheless, there are two important limitations of this type of platform. First, an unconventional microfabrication process is necessary for the glass-based platform, which limits the utility of this platform. In order to overcome this limitation, in this dissertation a convenient microfluidic system is fabricated using a negative photoresist called SU-8. The fabrication process for the SU-8-based system is compatible with other fabrication techniques used in developing microelectronics, and this compatibility is essential for integrating electronics for studying dynamics in the mitotic spindle. The second limitation of the previously-developed glass-based platform is its lack of bio-compatibility. For example, microtubules strongly interact with the surface of the glass-based platform, thereby hindering the study of dynamics in the mitotic spindle. This dissertation presents a novel approach for assembling microtubules away from the surface of the platform, and a fabrication process is developed to assemble microtubules between two self-aligned thin film electrodes on thick SU-8 pedestals. This approach also allows the in-vitro model to mimic the three-dimensionality of the cellular mitotic spindle that is absent in previous work. The second application of an integrated bioengineering system discussed in this dissertation is to design and fabricate active electronics and sensors for an in-vivo application to monitor neural activity at the cellular level. Temperature sensors were chosen for a first demonstration. In order for temperature sensors to be able to be implanted into brain interfaces, it is necessary for these devices to be fabricated using processes that are compatible with bio-compatible substrates such as glass and plastic. This dissertation addresses this challenge by developing temperature sensors integrated with biasing circuitry using zinc oxide thin film transistors (TFTs) fabricated on polyimide substrates. The integrated sensors show good temperature sensitivity, which is critical for monitoring neural temperature at the cellular level. This dissertation also describes the unique requirements of encapsulating implantable electronics. For instance, encapsulation schemes must be designed in such a way that they both protect electronic devices from extracellular fluids and also do not interfere with the functionality of these devices. In this work, SU-8 is used as a convenient and effective encapsulation layer. Thermal engineering to prevent active electronics from overheating and to ensure accurate temperature measurement from temperature sensors is also discussed, and a synergistic encapsulation and thermal engineering combination is presented.

Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS

NASA Technical Reports Server (NTRS)

White, Mark; Vu, Duc; Nguyen, Duc; Ruiz, Ron; Chen, Yuan; Bernstein, Joseph B.

2006-01-01

As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Handheld ultrasound array imaging device

NASA Astrophysics Data System (ADS)

Hwang, Juin-Jet; Quistgaard, Jens

1999-06-01

A handheld ultrasound imaging device, one that weighs less than five pounds, has been developed for diagnosing trauma in the combat battlefield as well as a variety of commercial mobile diagnostic applications. This handheld device consists of four component ASICs, each is designed using the state of the art microelectronics technologies. These ASICs are integrated with a convex array transducer to allow high quality imaging of soft tissues and blood flow in real time. The device is designed to be battery driven or ac powered with built-in image storage and cineloop playback capability. Design methodologies of a handheld device are fundamentally different to those of a cart-based system. As system architecture, signal and image processing algorithm as well as image control circuit and software in this device is deigned suitably for large-scale integration, the image performance of this device is designed to be adequate to the intent applications. To elongate the battery life, low power design rules and power management circuits are incorporated in the design of each component ASIC. The performance of the prototype device is currently being evaluated for various applications such as a primary image screening tool, fetal imaging in Obstetrics, foreign object detection and wound assessment for emergency care, etc.

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandal, Suman, E-mail: suman.mandal@sscu.iisc.ernet.in; Pal, Somnath; Hazarika, Abhijit

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO{sub 2} have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitablymore » influencing the dielectric loss while invariably upholding the CP value.« less

Genetically Engineered Microelectronic Infrared Filters

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

1998-01-01

A genetic algorithm is used for design of infrared filters and in the understanding of the material structure of a resonant tunneling diode. These two components are examples of microdevices and nanodevices that can be numerically simulated using fundamental mathematical and physical models. Because the number of parameters that can be used in the design of one of these devices is large, and because experimental exploration of the design space is unfeasible, reliable software models integrated with global optimization methods are examined The genetic algorithm and engineering design codes have been implemented on massively parallel computers to exploit their high performance. Design results are presented for the infrared filter showing new and optimized device design. Results for nanodevices are presented in a companion paper at this workshop.

Epoxy bond and stop etch fabrication method

DOEpatents

Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

2000-01-01

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

100 years of the physics of diodes

NASA Astrophysics Data System (ADS)

Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

2017-03-01

The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

The merger of electrochemistry and molecular electronics.

PubMed

McCreery, Richard L

2012-02-01

Molecular Electronics has the potential to greatly enhance existing silicon-based microelectronics to realize new functions, higher device density, lower power consumption, and lower cost. Although the investigation of electron transport through single molecules and molecular monolayers in "molecular junctions" is a recent development, many of the relevant concepts and phenomena are derived from electrochemistry, as practiced for the past several decades. The past 10+ years have seen an explosion of research activity directed toward how the structure of molecules affects electron transport in molecular junctions, with the ultimate objective of "rational design" of molecular components with new electronic functions, such as chemical sensing, interactions with light, and low-cost, low-power consumer electronics. In order to achieve these scientifically and commercially important objectives, the factors controlling charge transport in molecules "connected" to conducting contacts must be understood, and methods for massively parallel manufacturing of molecular circuits must be developed. This Personal Account describes the development of reproducible and robust molecular electronic devices, starting with modified electrodes used in electrochemistry and progressing to manufacturable molecular junctions. Although the field faced some early difficulties in reliability and characterization, the pieces are now in place for rapid advances in understanding charge transport at the molecular level. Inherent in the field of Molecular Electronics are many electrochemical concepts, including tunneling, redox exchange, activated electron transfer, and electron coupling between molecules and conducting contacts. Copyright © 2012 The Japan Chemical Journal Forum and Wiley Periodicals, Inc.

Novel neutron sources at the Radiological Research Accelerator Facility

PubMed Central

Xu, Yanping; Garty, Guy; Marino, Stephen A.; Massey, Thomas N.; Randers-Pehrson, Gerhard; Johnson, Gary W.; Brenner, David J.

2012-01-01

Since the 1960s, the Radiological Research Accelerator Facility (RARAF) has been providing researchers in biology, chemistry and physics with advanced irradiation techniques, using charged particles, photons and neutrons. We are currently developing a unique facility at RARAF, to simulate neutron spectra from an improvised nuclear device (IND), based on calculations of the neutron spectrum at 1.5 km from the epicenter of the Hiroshima atom bomb. This is significantly different from a standard fission spectrum, because the spectrum changes as the neutrons are transported through air, and is dominated by neutron energies between 0.05 and 8 MeV. This facility will be based on a mixed proton/deuteron beam impinging on a thick beryllium target. A second, novel facility under development is our new neutron microbeam. The neutron microbeam will, for the first time, provide a kinematically collimated neutron beam, 10–20 micron in diameter. This facility is based on a Proton Microbeam, impinging on a thin lithium target near the threshold of the 7Li(p,n)7Be reaction. This novel neutron microbeam will enable studies of neutron damage to small targets, such as single cells, individual organs within small animals or microelectronic components. PMID:22545061

Novel neutron sources at the Radiological Research Accelerator Facility.

PubMed

Xu, Yanping; Garty, Guy; Marino, Stephen A; Massey, Thomas N; Randers-Pehrson, Gerhard; Johnson, Gary W; Brenner, David J

2012-03-16

Since the 1960s, the Radiological Research Accelerator Facility (RARAF) has been providing researchers in biology, chemistry and physics with advanced irradiation techniques, using charged particles, photons and neutrons.We are currently developing a unique facility at RARAF, to simulate neutron spectra from an improvised nuclear device (IND), based on calculations of the neutron spectrum at 1.5 km from the epicenter of the Hiroshima atom bomb. This is significantly different from a standard fission spectrum, because the spectrum changes as the neutrons are transported through air, and is dominated by neutron energies between 0.05 and 8 MeV. This facility will be based on a mixed proton/deuteron beam impinging on a thick beryllium target.A second, novel facility under development is our new neutron microbeam. The neutron microbeam will, for the first time, provide a kinematically collimated neutron beam, 10-20 micron in diameter. This facility is based on a Proton Microbeam, impinging on a thin lithium target near the threshold of the (7)Li(p,n)(7)Be reaction. This novel neutron microbeam will enable studies of neutron damage to small targets, such as single cells, individual organs within small animals or microelectronic components.

Novel neutron sources at the Radiological Research Accelerator Facility

DOE PAGES

Xu, Yanping; Garty, G.; Marino, S. A.; ...

2012-03-16

Since the 1960s, the Radiological Research Accelerator Facility (RARAF) has been providing researchers in biology, chemistry and physics with advanced irradiation techniques, using charged particles, photons and neutrons. We are currently developing a unique facility at RARAF, to simulate neutron spectra from an improvised nuclear device (IND), based on calculations of the neutron spectrum at 1.5 km from the epicenter of the Hiroshima atom bomb. This is significantly different from a standard fission spectrum, because the spectrum changes as the neutrons are transported through air, and is dominated by neutron energies between 0.05 and 8 MeV. This facility will bemore » based on a mixed proton/deuteron beam impinging on a thick beryllium target. A second, novel facility under development is our new neutron microbeam. The neutron microbeam will, for the first time, provide a kinematically collimated neutron beam, 10-20 micron in diameter. This facility is based on a proton microbeam, impinging on a thin lithium target near the threshold of the Li-7(p,n)Be-7 reaction. Lastly, this novel neutron microbeam will enable studies of neutron damage to small targets, such as single cells, individual organs within small animals or microelectronic components.« less

Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

PubMed

Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

2005-02-01

Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k

Technology Roadmaps for Compound Semiconductors

PubMed Central

Bennett, Herbert S.

2000-01-01

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

Novel neutron sources at the Radiological Research Accelerator Facility

NASA Astrophysics Data System (ADS)

Xu, Y.; Garty, G.; Marino, S. A.; Massey, T. N.; Randers-Pehrson, G.; Johnson, G. W.; Brenner, D. J.

2012-03-01

Since the 1960s, the Radiological Research Accelerator Facility (RARAF) has been providing researchers in biology, chemistry and physics with advanced irradiation techniques, using charged particles, photons and neutrons. We are currently developing a unique facility at RARAF, to simulate neutron spectra from an improvised nuclear device (IND), based on calculations of the neutron spectrum at 1.5 km from the epicenter of the Hiroshima atom bomb. This is significantly different from a standard fission spectrum, because the spectrum changes as the neutrons are transported through air, and is dominated by neutron energies between 0.05 and 8 MeV. This facility will be based on a mixed proton/deuteron beam impinging on a thick beryllium target. A second, novel facility under development is our new neutron microbeam. The neutron microbeam will, for the first time, provide a kinematically collimated neutron beam, 10-20 micron in diameter. This facility is based on a proton microbeam, impinging on a thin lithium target near the threshold of the 7Li(p,n)7Be reaction. This novel neutron microbeam will enable studies of neutron damage to small targets, such as single cells, individual organs within small animals or microelectronic components.

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Hybrid electro-optical nanosystem for neurons investigation

NASA Astrophysics Data System (ADS)

Miu, Mihaela; Kleps, Irina; Craciunoiu, Florea; Simion, Monica; Bragaru, Adina; Ignat, Teodora

2010-11-01

The scope of this paper is development of a new laboratory-on-a-chip (LOC) device for biomedical studies consisting of a microfluidic system coupled to microelectronic/optical transducers with nanometric features, commonly called biosensors. The proposed device is a hybrid system with sensing element on silicon (Si) chip and microfluidic system on polydimethylsiloxane (PDMS) substrates, taking into accounts their particular advantages. Different types of nanoelectrode arrays, positioned in the reactor, have been investigated as sensitive elements for electrical detection and the recording of neuron extracellular electric activity has been monitorized in parallel with whole-cell patch-clamp membrane current. Moreover, using an additional porosification process the sensing element became efficient for optical detection also. The preliminary test results demonstrate the functionality of the proposed design and also the fabrication technology, the devices bringing advantages in terms enhancement of sensitivity in both optoelectronic detection schemes.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

New precursors and chemistry for the growth of transition metal films by atomic layer deposition

NASA Astrophysics Data System (ADS)

Knisley, Thomas Joseph

The advancing complexity of advanced microelectronic devices is placing rigorous demands on currently used PVD and CVD deposition techniques. The ALD deposition method is proposed to meet the film thickness and conformality constraints needed by the semiconductor industry in future manufacturing processes. Unfortunately, there is a limited number of chemical precursors available that have high thermal stability, reactivity, and vapor pressure suitable for ALD film growth to occur. These properties collectively contribute to the lack of suitable transition metal precursors available for use in ALD. In this thesis, we report the discovery of a series of novel transition metal diazadienate precursors that promising properties deemed suitable for ALD. The volatility and thermal stability of the new transition metal diazadienyl compounds were studied by preparative sublimation and capillary tube melting point/decomposition experiments. Thermogravimetric analyses (TGA) demonstrate precursor residues of less than 4% at 500 °C. In addition, sublimation data, melting points, and decomposition temperatures for all complexes are presented. The manganese diazadienyl complex has the highest decomposition temperature of the series of complexes produced (325 °C). During preparative sublimations, the product recoveries of all transition metal diazadienyl complexes were greater than 92.0% with nonvolatile residues of less than 7.0%. This is an excellent indication that these complexes may be suitable candidates as metal precursors for ALD. Nickel nitride (NixN) films have been studied as an intermediate material for the formation of both nickel metal and nickel silicide using chemical vapor deposition. Herein, we describe the ALD growth of nickel nitride thin films from bis(1,4-di-tert-butyl-1,3-diazabutadiene) nickel(II) (Ni(tBu2DAD)2) and 1,1-dimethylhydrazine. An ALD window for the deposition of nickel nitride films on 500 nm thermal SiO2 substrates was observed between 225 and 240 °C with a constant growth rate of 0.70 Å/cycle. X-Ray photoelectron spectroscopy (XPS) showed all expected ionizations with carbon concentrations below the detection limit after argon ion sputtering. Due to preferential nitrogen sputtering in XPS, Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) were performed and subsequently revealed Ni:N ratios between 2-4 for films deposited within the ALD window. AFM measurements revealed a RMS roughness value of 10.8 nm on an as-deposited film at 225°C. All as-deposited films were amorphous as determined by X-ray diffraction. Copper is the primary interconnect material in microelectronics devices, due to its high conductivity and low affinity towards electromigration. With transistor gate lengths scheduled to reach 14 nm by 2014, there are severe demands upon the current film growth techniques used in device fabrication. The ALD film growth method is ideally suited for future microelectronics manufacturing, since it inherently provides highly conformal thin films, even in high aspect ratio nanoscale features, and allows sub-nanometer control over film thicknesses. In Chapter 4, we describe the atomic layer deposition of high purity, low resistivity copper metal thin films using a three precursor sequence entailing Cu(dmap)2, formic acid, and hydrazine. In this process, Cu(dmap) 2 is unreactive towards hydrazine but is transformed to copper(II) formate, which is then readily reduced to copper metal by subsequent hydrazine exposure. The present work therefore addresses a central problem with the ALD growth of metal thin films: low reactivity of metal precursors toward common reducing agents. A constant growth rate of 0.47-0.50 Å/cycle upon prime grade Si(100) was observed at substrate temperatures between 100 and 170 °C. Compositional analyses (XPS and TOF-ERDA) revealed copper films with low levels of carbon, oxygen, nitrogen, and hydrogen. Powder X-ray diffraction spectra of all films showed polycrystalline copper. The resistivities of films grown between 100 and 140 °C ranged between 9.6 and 16.4 μΩ·cm, demonstrating the growth of high purity, low resistivity copper films. An AFM measurement revealed a RMS roughness value of 3.5 nm on an as-deposited 50 nm Cu film at 120 °C.

Silicon photonics for high-performance interconnection networks

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr

2011-12-01

We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics enables new sets of opportunities that we can leverage for performance gains, as well as new sets of challenges that we must solve. Leveraging its inherent compatibility with standard fabrication techniques of the semiconductor industry, combined with its capability of dense integration with advanced microelectronics, silicon photonics also offers a clear path toward commercialization through low-cost mass-volume production. Combining empirical validations of feasibility, demonstrations of massive performance gains in large-scale systems, and the potential for commercial penetration of silicon photonics, the impact of this work will become evident in the many decades that follow.

European MEMS foundries

NASA Astrophysics Data System (ADS)

Salomon, Patric R.

2003-01-01

According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

Electrochemical investigations of advanced materials for microelectronic and energy storage devices

NASA Astrophysics Data System (ADS)

Goonetilleke, Pubudu Chaminda

A broad range of electrochemical techniques are employed in this work to study a selected set of advanced materials for applications in microelectronics and energy storage devices. The primary motivation of this study has been to explore the capabilities of certain modern electrochemical techniques in a number of emerging areas of material processing and characterization. The work includes both aqueous and non-aqueous systems, with applications in two rather general areas of technology, namely microelectronics and energy storage. The sub-systems selected for investigation are: (i) Electrochemical mechanical and chemical mechanical planarization (ECMP and CMP, respectively), (ii) Carbon nanotubes in combination with room temperature ionic liquids (ILs), and (iii) Cathode materials for high-performance Li ion batteries. The first group of systems represents an important building block in the fabrication of microelectronic devices. The second and third groups of systems are relevant for new energy storage technologies, and have generated immense interests in recent years. A common feature of these different systems is that they all are associated with complex surface reactions that dictate the performance of the devices based on them. Fundamental understanding of these reactions is crucial to further development and expansion of their associated technologies. It is the complex mechanistic details of these surface reactions that we address using a judicious combination of a number of state of the art electrochemical techniques. The main electrochemical techniques used in this work include: (i) Cyclic voltammetry (CV) and slow scan cyclic voltammetry (SSCV, a special case of CV); (ii) Galvanostatic (or current-controlled) measurements; (iii) Electrochemical impedance spectroscopy (EIS), based on two different methodologies, namely, Fourier transform EIS (FT-EIS, capable of studying fast reaction kinetics in a time-resolved mode), and EIS using frequency response analysis (employed to study slow reactions such as solid state diffusion of Li). The designs of both the experimental equipment and the control variables change for studying the different aqueous and non-aqueous systems. The protocols for data analysis also change depending on the systems. In addition, it often becomes necessary to combine different aspects of the different experimental methods to obtain the necessary information about the system(s) under study. The experimental strategies and the associated theoretical considerations for developing these strategies are discussed in appropriate contexts of this work. CNT electrodes in combination with IL electrolytes are potentially important for electrochemical super-capacitors. We have carried out electrochemical investigation of such a system involving a paper-electrode of multiwall CNT in the IL of 1-Ethyl-3-methyl imidazolium ethylsulfate (EMIM-EtSO4). Our study concentrated on the analytical aspects of cyclic voltammetry (CV) to probe the double layer capacitance of these relatively unconventional systems. (that involve rather large charge-discharge time constants). Both theoretical and experimental aspects of CV for such systems have been discussed, focusing in particular, on the effects of faradaic side-reactions, electrolyte resistance and voltage scan speeds. The results have been analyzed using an electrode equivalent circuit model, demonstrating a method to account for the typical artifacts expected in CV of CNT-IL interfaces. Chemical-mechanical planarization (CMP) of copper has now become an integral part of modern semiconductor fabrication technology. Recently, electrochemical-mechanical planarization (ECMP) has emerged as a possible extension of CMP, where through voltage-activated removal of Cu surface layers, one can substantially minimize the down-force necessary for mechanical polishing However, the detailed electrochemical factors that are central to designing efficient abrasive-free electrolytes for ECMP are not clearly understood at the present time. The present work has addressed this issue by studying the relative electrochemical effects of selected different chemical additives. Controlling the surface reactions (that is controlling the voltage-induced material removal) in ECMP requires a carefully designed combination of a number of electrochemical input variables (voltage activation program and electrolyte composition). We have studied the main experimental factors for designing these parameters, using triangular and rectangular-voltage-pulse modulated dissolution of Cu in electrolytes of different chemical compositions. Applications of rechargeable Li ion batteries have considerably expanded in recent years. As a result, research activities involving material-fabrication and characterization for these batteries also have expanded during this period. The importance of studying these specific materials lies in the fact that the cathode plays a major role in its contribution to the battery performance LiMn2O4 cathodes are being considered for next generation of Li ion batteries. The current work focuses on a specific problem commonly associated with Li cathode systems, namely surface film formation on the cathodes. LiMn2O4 cathodes tend to develop native surface films in carbonate electrolytes. By combining D.C. SSCV with A.C. EIS, we have studied how these films would react with an electrolyte of LiBF4 in ethylene and diethyl carbonates. We have demonstrated that such reactions could affect the measurement of the characteristic electrochemical parameters of the cathode, namely the intercalation capacitance, initial capacity-loss, coulometric titration profiles, and the solid state diffusion coefficient of Li+. A generalized framework for data analysis, based on the considerations of electrode equivalent circuits, has been used to combine the results of the D.C. and A.C. measurements.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Characterization and Modeling of High Power Microwave Effects in CMOS Microelectronics

DTIC Science & Technology

2010-01-01

margin measurement 28 Any voltage above the line marked VIH is considered a valid logic high on the input of the gate. VIH and VIL are defined...can handle any voltage noise level at the input up to VIL without changing state. The region in between VIL and VIH is considered an invalid logic...29 Table 2.2: Intrinsic device characteristics derived from SPETCRE simulations   VIH  (V)  VIL (V)  High Noise Margin  (V)  Low Noise Margin (V

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; LaBel, Kenneth A.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kennth P.; Hakey, Mark C.; Dodd, Paul E.; Shanneyfelt, Marty R.; Schwank, James R.;

1ST International Conference on Small Satellites: New Technologies, Achievements, Problems And Prospects For International Co-Operation In The New Millenium.

DTIC Science & Technology

1998-01-01

deployment of the two first systems Iridium and Globalstar. This event forces us to reconsider prospects of creating new systems of a similar class...Korolev, Moscow Region, Russian Federation Now are created and the new electro-optics equipment of the earth remote sensing are developed which...PC for control and data preprocessing; • software. The modern level of microelectronics development allows to create an advanced SMASSIR with new

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

NASA Technical Reports Server (NTRS)

1984-01-01

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Advance Power Technology Experiment for the Starshine 3 Satellite

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Wilt, David; Raffaelle, Ryne; Button, Robert; Smith, Mark; Kerslake, Thomas; Miller, Thomas; Bailey, Sheila (Technical Monitor); Hepp, A. (Technical Monitor)

2001-01-01

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IWS) for evaluation.

Advance Power Technology Demonstration on Starshine 3

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Wilt, David; Raffaelle, Ryne; Button, Robert; Smith, Mark; Kerslake, Thomas; Miller, Thomas

2002-01-01

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IMPS) for evaluation.

Waste-to-energy conversion from a microfluidic device

NASA Astrophysics Data System (ADS)

López-González, B.; Jiménez-Valdés, R. J.; Moreno-Zuria, A.; Cuevas-Muñiz, F. M.; Ledesma-García, J.; García-Cordero, J. L.; Arriaga, L. G.

2017-08-01

This work reports the successful harvesting of energy from waste produced in a microfluidic device using a fuel cell. A miniaturized glucose air-breathing microfluidic fuel cell (ABμFFC) was designed, fabricated and tested with three different configurations according to their electrode nature: inorganic, hybrid and biofuel cell. Each ABμFFC was characterized using an ideal medium, with sterile cell culture medium, and with waste produced on a microfluidic device. The inorganic-ABμFFC exhibited the highest performance compared to the rest of the configurations. As a proof-of-concept, cancer cells were cultured on a microfluidic device and the consumed cell culture media (glucose concentration <11 mM) was used as an energy source without further treatment, into the inorganic-ABμFFC. The fuel cell generated a maximum total power of 5.2 μW, which is enough energy to power low-consumption microelectronic chips. This application demonstrates that the waste produced by microfluidic applications could be potentially scavenged to produce electrical energy. It also opens the possibility to develop truly energy self-sufficient portable devices.

Nonlinear electrokinetic phenomena in microfluidic devices

NASA Astrophysics Data System (ADS)

Ben, Yuxing

This thesis addresses nonlinear electrokinetic mechanisms for transporting fluid and particles in microfluidic devices for potential applications in biomedical chips, microelectronic cooling and micro-fuel cells. Nonlinear electrokinetics have many advantages, such as low voltage, low power, high velocity, and no significant gas formation in the electrolyte. However, they involve new and complex charging and flow mechanisms that are still not fully understood or explored. Linear electrokinetic fingering that occurs when a fluid with a lower electrolyte concentration advances into one with a higher concentration is first analyzed. Unlike earlier miscible fingering theories, the linear stability analysis is carried out in the self-similar coordinates of the diffusing front. This new spectral theory is developed for small-amplitude gravity and viscous miscible fingering phenomena in general and applied to electrokinetic miscible fingering specifically. Transient electrokinetic fingering is shown to be insignificant in sub-millimeter micro-devices. Nonlinear electroosmotic flow around an ion-exchange spherical granule is studied next. When an electric field is applied across a conducting and ion-selective porous granule in an electrolyte solution, a polarized surface layer with excess counter-ions is created. The flux-induced polarization produces a nonlinear slip velocity to produce micro-vortices around this sphere. This polarization layer is reduced by convection at high velocity. Two velocity scalings at low and high electric fields are derived and favorably compared with experimental results. A mixing device based on this mechanism is shown to produce mixing efficiency 10-100 times higher than molecular diffusion. Finally, AC nonlinear electrokinetic flow on planar electrodes is studied. Two double layer charging mechanisms are responsible for the flow---one due to capacitive charging of ions from the bulk electrolyte and one due to Faradaic reactions at the electrode that consume or produce ions in the double layer. Faradaic charging is analyzed for specific reactions. From the theory, particular electrokinetic flows above the electrodes are selected for micropumps and bioparticle trapping by specifying the electrode geometry and the applied voltage and frequency.

Rapid and cheap prototyping of a microfluidic cell sorter.

PubMed

Islam, M Z; McMullin, J N; Tsui, Y Y

2011-05-01

Development of a microfluidic device is generally based on fabrication-design-fabrication loop, as, unlike the microelectronics design, there is no rigorous simulation-based verification of the chip before fabrication. This usually results in extremely long, and hence expensive, product development cycle if micro/nano fabrication facilities are used from the beginning of the cycle. Here, we illustrate a novel approach of device prototyping that is fast, cheap, reliable, and most importantly, this technique can be adopted even if no state-of-the-art microfabrication facility is available. A water-jet machine is used to cut the desired microfluidic channels into a thin steel plate which is then used as a template to cut the channels into a thin sheet of a transparent and cheap polymer material named Surlyn® by using a Hot Knife™. The feature-inscribed Surlyn sheet is bonded in between two microscope glass slides by utilizing the techniques which has been being used in curing polymer film between dual layer automotive glasses for years. Optical fibers are inserted from the sides of chip and are bonded by UV epoxy. To study the applicability of this prototyping approach, we made a basic microfluidic sorter and tested its functionalities. Sample containing microparticles is injected into the chip. Light from a 532-nm diode laser is coupled into the optical fiber that delivers light to the interrogation region in the channel. The emitted light from the particle is collected by a photodiode (PD) placed over the detection window. The device sorts the particles into the sorted or waste outlets depending on the level of the PD signal. We used fluorescent latex beads to test the detection and sorting functionalities of the device. We found that the system could detect all the beads that passed through its geometric observation region and could sort almost all the beads it detected. Copyright © 2011 International Society for Advancement of Cytometry.

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

Microelectronics: The Nature of Work, Skills and Training. An Analysis of Case Studies from Developed and Developing Countries. Training Discussion Paper No. 51.

ERIC Educational Resources Information Center

Acero, Liliana

Microelectronic technologies have had an impact on the nature of work in industry for both white-collar and blue-collar workers. Evidence from sector- and enterprise-level studies shows changes in skills and job content for blue-collar workers involved with numerically controlled machine tools, robots, and other microelectronics applications.…

Energy efficient mechanisms for high-performance Wireless Sensor Networks

NASA Astrophysics Data System (ADS)

Alsaify, Baha'adnan

2009-12-01

Due to recent advances in microelectronics, the development of low cost, small, and energy efficient devices became possible. Those advances led to the birth of the Wireless Sensor Networks (WSNs). WSNs consist of a large set of sensor nodes equipped with communication capabilities, scattered in the area to monitor. Researchers focus on several aspects of WSNs. Such aspects include the quality of service the WSNs provide (data delivery delay, accuracy of data, etc...), the scalability of the network to contain thousands of sensor nodes (the terms node and sensor node are being used interchangeably), the robustness of the network (allowing the network to work even if a certain percentage of nodes fails), and making the energy consumption in the network as low as possible to prolong the network's lifetime. In this thesis, we present an approach that can be applied to the sensing devices that are scattered in an area for Sensor Networks. This work will use the well-known approach of using a awaking scheduling to extend the network's lifespan. We designed a scheduling algorithm that will reduce the delay's upper bound the reported data will experience, while at the same time keeps the advantages that are offered by the use of the awaking scheduling -- the energy consumption reduction which will lead to the increase in the network's lifetime. The wakeup scheduling is based on the location of the node relative to its neighbors and its distance from the Base Station (the terms Base Station and sink are being used interchangeably). We apply the proposed method to a set of simulated nodes using the "ONE Simulator". We test the performance of this approach with three other approaches -- Direct Routing technique, the well known LEACH algorithm, and a multi-parent scheduling algorithm. We demonstrate a good improvement on the network's quality of service and a reduction of the consumed energy.

Advanced imaging research and development at DARPA

NASA Astrophysics Data System (ADS)

Dhar, Nibir K.; Dat, Ravi

2012-06-01

Advances in imaging technology have huge impact on our daily lives. Innovations in optics, focal plane arrays (FPA), microelectronics and computation have revolutionized camera design. As a result, new approaches to camera design and low cost manufacturing is now possible. These advances are clearly evident in visible wavelength band due to pixel scaling, improvements in silicon material and CMOS technology. CMOS cameras are available in cell phones and many other consumer products. Advances in infrared imaging technology have been slow due to market volume and many technological barriers in detector materials, optics and fundamental limits imposed by the scaling laws of optics. There is of course much room for improvements in both, visible and infrared imaging technology. This paper highlights various technology development projects at DARPA to advance the imaging technology for both, visible and infrared. Challenges and potentials solutions are highlighted in areas related to wide field-of-view camera design, small pitch pixel, broadband and multiband detectors and focal plane arrays.

Fabrication of fillable microparticles and other complex 3D microstructures

NASA Astrophysics Data System (ADS)

McHugh, Kevin J.; Nguyen, Thanh D.; Linehan, Allison R.; Yang, David; Behrens, Adam M.; Rose, Sviatlana; Tochka, Zachary L.; Tzeng, Stephany Y.; Norman, James J.; Anselmo, Aaron C.; Xu, Xian; Tomasic, Stephanie; Taylor, Matthew A.; Lu, Jennifer; Guarecuco, Rohiverth; Langer, Robert; Jaklenec, Ana

2017-09-01

Three-dimensional (3D) microstructures created by microfabrication and additive manufacturing have demonstrated value across a number of fields, ranging from biomedicine to microelectronics. However, the techniques used to create these devices each have their own characteristic set of advantages and limitations with regards to resolution, material compatibility, and geometrical constraints that determine the types of microstructures that can be formed. We describe a microfabrication method, termed StampEd Assembly of polymer Layers (SEAL), and create injectable pulsatile drug-delivery microparticles, pH sensors, and 3D microfluidic devices that we could not produce using traditional 3D printing. SEAL allows us to generate microstructures with complex geometry at high resolution, produce fully enclosed internal cavities containing a solid or liquid, and use potentially any thermoplastic material without processing additives.

The controlled growth of perovskite thin films: Opportunities, challenges, and synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, D.G.; Theis, C.D.; Hawley, M.E.

1997-10-01

The broad spectrum of electronic and optical properties exhibited by perovskites offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the monolayer-level; its use for the integration of perovskites with similar nanoscale customization appears promising. Composition control and oxidation are often significant challenges to the growth of perovskites by MBE, but we show that these can be met through the use of purified ozone as an oxidant and real-time atomic absorption composition control. The opportunities, challenges, andmore » synthesis of oxide heterostructures by reactive MBE are described, with examples taken from the growth of oxide superconductors and oxide ferroelectrics.« less

Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

NASA Astrophysics Data System (ADS)

Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

2016-08-01

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Swimming using surface acoustic waves.

PubMed

Bourquin, Yannyk; Cooper, Jonathan M

2013-01-01

Microactuation of free standing objects in fluids is currently dominated by the rotary propeller, giving rise to a range of potential applications in the military, aeronautic and biomedical fields. Previously, surface acoustic waves (SAWs) have been shown to be of increasing interest in the field of microfluidics, where the refraction of a SAW into a drop of fluid creates a convective flow, a phenomenon generally known as SAW streaming. We now show how SAWs, generated at microelectronic devices, can be used as an efficient method of propulsion actuated by localised fluid streaming. The direction of the force arising from such streaming is optimal when the devices are maintained at the Rayleigh angle. The technique provides propulsion without any moving parts, and, due to the inherent design of the SAW transducer, enables simple control of the direction of travel.

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

NASA Astrophysics Data System (ADS)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, H. L.; Mei, Z. X.; Zhang, Q. H.

2011-05-30

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

Calculation of the figure of merit for carbon nanotubes based devices

NASA Astrophysics Data System (ADS)

Vaseashta, Ashok

2004-03-01

The dimensionality of a system has a profound influence on its physical behavior. With advances in technology over the past few decades, it has become possible to fabricate and study reduced-dimensional systems in which electrons are strongly confined in one or more dimensions. In the case of 1-D electron systems, most of the results, such as conductance quantization, have been explained in terms of non-interacting electrons. In contrast to the cases of 2D and 3D systems, the question of what roles electron-electron interactions play in real 1-D systems has been difficult to address, because of the difficulty in obtaining long, relatively disorder free 1-D wires. Since their first discovery and fabrication in 1991, carbon nanotubes (CNTs) have received considerable attention because of the prospect of new fundamental science and many potential applications. Hence, it has been possible to conduct studies of the electrons in 1-D. Carbon nanotubes are of considerable technological importance due to their excellent mechanical, electrical, and chemical characteristics. The potential technological applications include electronics, opto-electronics and biomedical sensors. The applications of carbon nanotubes include quantum wire interconnects, diodes and transistors for computing, capacitors, data storage devices, field emitters, flat panel displays and terahertz oscillators. One of the most remarkable characteristics is the possibility of bandgap engineering by controlling the microstructure. Hence, a pentagon-heptagon defect in the hexagonal network can connect a metallic to a semiconductor nanotube, providing an Angstrom-scale hetero-junction with a device density approximately 10^4 times greater than present day microelectronics. Also, successfully contacted carbon nanotubes have exhibited a large number of useful quantum electronic and low dimensional transport phenomena, such as true quantum wire behaviors, room temperature field effect transistors, room temperature single electron transistors, Luttinger-liquid behavior, the Aharonov Bohm effect, and Fabry-Perot interference effects. Hence it is evident that CNT can be used for a variety of applications. To use CNT based devices, it is critical to know the relative advantage of using CNTs over other known electronic materials. The figure of merit for CNT based devices is not reported so far. It is the objective of this investigation to calculate the figure of merit and present such results. Such calculations will enable researchers to focus their research for specific device designs where CNT based devices show a marked improvement over conventional semiconductor devices.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

IR DirectFET Extreme Environments Evaluation Final Report

NASA Technical Reports Server (NTRS)

Burmeister, Martin; Mottiwala, Amin

2008-01-01

In 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as 'Version 2') enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space....

Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

PubMed

Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

2014-04-01

Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

An Implantable Neural Sensing Microsystem with Fiber-Optic Data Transmission and Power Delivery

PubMed Central

Park, Sunmee; Borton, David A.; Kang, Mingyu; Nurmikko, Arto V.; Song, Yoon-Kyu

2013-01-01

We have developed a prototype cortical neural sensing microsystem for brain implantable neuroengineering applications. Its key feature is that both the transmission of broadband, multichannel neural data and power required for the embedded microelectronics are provided by optical fiber access. The fiber-optic system is aimed at enabling neural recording from rodents and primates by converting cortical signals to a digital stream of infrared light pulses. In the full microsystem whose performance is summarized in this paper, an analog-to-digital converter and a low power digital controller IC have been integrated with a low threshold, semiconductor laser to extract the digitized neural signals optically from the implantable unit. The microsystem also acquires electrical power and synchronization clocks via optical fibers from an external laser by using a highly efficient photovoltaic cell on board. The implantable unit employs a flexible polymer substrate to integrate analog and digital microelectronics and on-chip optoelectronic components, while adapting to the anatomical and physiological constraints of the environment. A low power analog CMOS chip, which includes preamplifier and multiplexing circuitry, is directly flip-chip bonded to the microelectrode array to form the cortical neurosensor device. PMID:23666130

Carbon-ionogel supercapacitors for integrated microelectronics.

PubMed

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-22

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm(-2) is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm(2) electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm(2) of active electrode area, reach areal capacitance values of ∼0.3 pF μm(-2) at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm(2) areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

Carbon-ionogel supercapacitors for integrated microelectronics

NASA Astrophysics Data System (ADS)

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-01

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm-2 is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm2 electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm2 of active electrode area, reach areal capacitance values of ˜0.3 pF μm-2 at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm2 areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

PubMed

Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

2014-07-04

Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Molten-Metal Droplet Deposition on a Moving Substrate in Microgravity: Aiding the Development of Novel Technologies for Microelectronic Assembly

NASA Technical Reports Server (NTRS)

Megaridis, C. M.; Bayer, I. S.; Poulikakos, D.; Nayagam, V.

2002-01-01

Driven by advancements in microelectronics manufacturing, this research investigates the oblique (non-axisymmetric) impact of liquid-metal droplets on flat substrates. The problem of interest is relevant to the development of the novel technology of on-demand dispension (printing) of microscopic solder deposits for the surface mounting of microelectronic devices. The technology, known as solder jetting, features on-demand deposition of miniature solder droplets (30 to 120 microns in diameter) in very fine, very accurate patterns using techniques analogous to those developed for the ink-jet printing industry. Despite its promise, severe limitations exist currently with regards to the throughput rates of the technology; some of these limitations are largely due to the lack of the capability for reliable prediction of solder bump positioning and shapes, especially under ballistic deposition conditions where the droplet impact phenomena are inherently three-dimensional. The study consists of a theoretical and an experimental component. The theoretical work uses a finite element formulation to simulate numerically the non-axisymmetric (3-D) fluid mechanics and heat transfer phenomena of a liquid solder droplet impacting at an angle alpha on a flat substrate. The work focuses on the pre-solidification regime. The modeling of the most challenging fluid mechanics part of the process has been completed successfully. It is based upon the full laminar Navier-Stokes equations employing a Lagrangian frame of reference. Due to the large droplet deformation, the surface (skin) as well as the volumetric mesh have to be regenerated during the calculations in order to maintain the high accuracy of the numerical scheme. The pressure and velocity fields are then interpolated on the newly created mesh. The numerical predictions are being tested against experiments, for cases where wetting phenomena are not important. For the impact parameters used in the example shown (We = 2.38, Fr = 16300, Re = 157), the droplet rolls along the substrate, but its shape remains practically axisymmetric for all impact angles within the range from 0 to 60 deg. Interestingly, the substrate/droplet contact area during the recoiling phase of the impact is not a monotonically decreasing function of time. The experimental component of the research tests the numerical predictions and provides necessary input data (contact angles) for the theoretical model. The experiments are performed in microgravity (2.2s drop tower of the NASA GRC) in order to allow for the use of mm-size solder droplets, which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamic groups (Re, Fr, We, Ste). Preliminary oblique impact experiments have been performed using water droplets in normal gravity.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics of relativistic Dirac fermions becomes relevant. This results in peculiar quantum oscillations in transport measurements which make it possible to unambiguously identify surface Dirac fermions. In order to lead us towards a better understanding of topological insulators and their applications, it is, however, necessary to develop techniques that will enable high quality materials to be obtained in a routine and reliable way. However, this has been an enormous challenge so far. Since highly volatile components are involved in most topological insulators, whether in bulk single crystal or epitaxial thin films or chemical vapor deposition grown nanoribbons, maintaining near stoichiometry has proven to be very difficult. Observing the predicted transport properties of these systems, particularly surface carriers of high mobility whilst maintaining bulk insulating states, is seriously impeded by the unintentional doping of bulk carriers. Moreover, in thin films and hetrostructures, at the all-important thickness range of a few nanometers, the additional limitation of the film-substrate lattice mismatch and the resulting strain in films is a major concern. In this thesis, we have developed a synthesis technique to obtain high quality SnTe nanoribbons, which is a topological crystalline insulator and its surface states are topologically protected by mirror symmetry of the lattice. The obtained ribbons are nearly stoichiometric and show strong semiconducting behavior with a bandgap of 240 meV. This is the first time high quality SnTe nanoribbons have been synthesized. High quality SnTe nanoribbons form a potential platform to understand the magnetic topological insulating behavior. In this thesis, it is also shown that magnetic behavior can be introduced in SnTe nanoribbons by means of chromium doping. Magnetically doped topological insulators, possessing an energy gap created at the Dirac point are predicted to exhibit exotic phenomena including the quantized anomalous Hall Effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. In addition, this thesis also discusses the growth and transport properties of another Te-based chalcogenide system, CoTe with ferrimagnetic and semiconducting behavior. We have shown that the structural, electrical and magnetic properties can be tuned by controlling the amount of cobalt in the system.

Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures

DTIC Science & Technology

2014-04-22

dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations...speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By...and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking

New barrierless copper-alloy film for future applications

NASA Astrophysics Data System (ADS)

Lin, Chon-Hsin Lin

2015-09-01

Since Cu metallization results in a conductivity and an electromigration resistance greater than those of Al, it has become popular for making Si-based interconnects for numerous devices in the field of microelectronics. Following the current trend of miniaturization required for most electronic components, there is a greater need for further size reduction in Si-based devices. The most critical side effect of size reduction is the increase in electronic scattering and resistivity when the barrier-layer thickness is further reduced. To explore advanced Cu-metallization methods and to develop a more economical manufacturing process for Cu-alloy films, the development of Cu materials having better quality and higher thermal stability becomes imperative for the metallization and annealing processes. For this purpose, we first fabricated Cu(GeNx) films and examined their thermal stability and electrical reliability after either cyclic or isothermal annealing. The excellent thermal and electrical properties make these new Cu-alloy films highly promising for applications that require more reliable and inexpensive copper interconnects. In this study, we fabricated Cu alloy films by doping a minute amount of Ge or GeNx, respectively, into the Cu films via barrierless Cu metallization, an inexpensive manufacturing method. Using these newly fabricated alloy films, we were able to eliminate or at least substantially reduce the detrimental interaction between the alloy and the barrierless Si substrate. The Cu(GeNx) films also exhibited high thermal stability, low resistivity and leakage current, and long time-dependent dielectric breakdown (TDDB) lifetimes, making such novel films a candidate for high-quality, economical, and more reliable Cu interconnects.

A hybrid approach to nanoelectronics

NASA Astrophysics Data System (ADS)

Cerofolini, G. F.; Arena, G.; Camalleri, C. M.; Galati, C.; Reina, S.; Renna, L.; Mascolo, D.

2005-08-01

The definition of features on the nanometre length scale (NLS) is impossible via conventional lithography, but can be done using extreme ultraviolet, synchrotron-radiation, or electron beam lithography. However, since these techniques are very expensive and still in their infancy, their exploitation in integrated circuit (IC) processing is still highly putative. Geometries on the NLS can however be produced with relative ease using the spacer patterning technique, i.e. transforming vertical features (like film thickness) in the vicinity of a step of a sacrificial layer into horizontal features. The ultimate length that can be produced in this way is controlled by the steepness of the step defining the sacrificial layer, the uniformity of the deposited or grown films, and the anisotropy of its etching. While useful for the preparation of a few devices with special needs, the above trick does not allow by itself the development of a nanotechnology where each layer useful for defining the circuit should be on the NLS and aligned on the underlying geometries with tolerances on the NLS. Setting up such a nanotechnology is a major problem which will involve the IC industry in the post-Roadmap era. Irrespective of the detailed structure of the basic constituents (molecules, supramolecular structures, clusters, etc), ICs with nanoscopic active elements can hardly be prepared without the ability to produce arrays of conductive strips with pitch on the NLS. This work is devoted to describing a scheme (essentially based on the existing microelectronic technology) for their production without the use of advanced lithography and how it can be arranged to host molecular devices.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

Wireless thin film transistor based on micro magnetic induction coupling antenna.

PubMed

Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

2015-12-22

A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the 'internet of things' (IoT).

Wireless thin film transistor based on micro magnetic induction coupling antenna

PubMed Central

Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

2015-01-01

A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT). PMID:26691929

Microengineering of magnetic bearings and actuators

NASA Astrophysics Data System (ADS)

Ghantasala, Muralihar K.; Qin, LiJiang; Sood, Dinesh K.; Zmood, Ronald B.

2000-06-01

Microengineering has evolved in the last decade as a subject of its own with the current research encompassing every possible area of devices from electromagnetic to optical and bio-micro electromechanical systems (MEMS). The primary advantage of the micro system technology is its small size, potential to produce high volume and low cost devices. However, the major impediments in the successful realization of many micro devices in practice are the reliability, packaging and integration with the existing microelectronics technology. Microengineering of actuators has recently grown tremendously due to its possible applicability to a wide range of devices of practical importance and the availability of a choice of materials. Selection of materials has been one of the important aspects of the design and fabrication of many micro system and actuators. This paper discusses the issues related to the selection of materials and subsequently their effect on the performance of the actuator. These will be discussed taking micro magnetic actuators and bearings, in particular, as examples. Fabrication and processing strategies and performance evaluation methods adopted will be described. Current status of the technology and projected futuristic applications in this area will be reviewed.

Micro-Scale Thermoacoustics

NASA Astrophysics Data System (ADS)

Offner, Avshalom; Ramon, Guy Z.

2016-11-01

Thermoacoustic phenomena - conversion of heat to acoustic oscillations - may be harnessed for construction of reliable, practically maintenance-free engines and heat pumps. Specifically, miniaturization of thermoacoustic devices holds great promise for cooling of micro-electronic components. However, as devices size is pushed down to micro-meter scale it is expected that non-negligible slip effects will exist at the solid-fluid interface. Accordingly, new theoretical models for thermoacoustic engines and heat pumps were derived, accounting for a slip boundary condition. These models are essential for the design process of micro-scale thermoacoustic devices that will operate under ultrasonic frequencies. Stability curves for engines - representing the onset of self-sustained oscillations - were calculated with both no-slip and slip boundary conditions, revealing improvement in the performance of engines with slip at the resonance frequency range applicable for micro-scale devices. Maximum achievable temperature differences curves for thermoacoustic heat pumps were calculated, revealing the negative effect of slip on the ability to pump heat up a temperature gradient. The authors acknowledge the support from the Nancy and Stephen Grand Technion Energy Program (GTEP).

Wireless thin film transistor based on micro magnetic induction coupling antenna

NASA Astrophysics Data System (ADS)

Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

2015-12-01

A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT).

Solid state microelectronics tolerant to radiation and high temperature. [JFET thick film hybrids

NASA Technical Reports Server (NTRS)

Draper, B. L.; Palmer, D. W.

1981-01-01

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Conference on the Physics and Chemistry of Semiconductor Interfaces (26th) Held in the Catamaran Resort Hotel in Pacific Beach, San Diego, California on 17 January 1999 to 21 January 1999. Microelectronics and Nanometer Structures: Processing, Measurement, and Phenomena

DTIC Science & Technology

2000-01-27

99)03604-5] I. INTRODUCTION Electron spin is becoming increasingly popular in elec- tronics. New devices, now generally referred to as spintron...relevant spin relaxation mechanisms are very sensitive to factors like mo- bility (which is higher in QWs), electron-hole separation (smaller in...from a naive theory . In addition to explaining experiment, the spin -hot-spot model predicts the behavior of other polyvalent metals. The model is

Graphitic nanofilms of zinc-blende materials: ab initio calculations

NASA Astrophysics Data System (ADS)

Hu, San-Lue; Zhao, Li; Li, Yan-Li

2017-12-01

Ab initio calculations on ultra-thin nanofilms of 25 kinds of zinc-blende semiconductors demonstrate their stable geometry structures growth along (1 1 1) surface. Our results show that the (1 1 1) surfaces of 9 kinds of zinc-blende semiconductors can transform into a stable graphitelike structure within a certain thickness. The tensile strain effect on the thickness of graphitic films is not obvious. The band gaps of stable graphitic films can be tuned over a wide range by epitaxial tensile strain, which is important for applications in microelectronic devices, solar cells and light-emitting diodes.

NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

This viewgraph presentation reviews NASA's Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission needs. The NEPP Program focuses on the reliability aspects of electronic devices. Three principal aspects to this reliability: (1) lifetime, (2) effects of space radiation and the space environment, and (3) creation and maintenance of the assurance support infrastructure required for success.

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

The Effect of 24c-Site (A) Cation Substitution on the Tetragonal-Cubic Phase Transition in Li7-xLa3-xAxZr2O12 Garnet-Based Ceramic Electrolyte

DTIC Science & Technology

2013-01-01

with Al [16,20]. In KrogereVink notation, the relationships for Ta and Nb substitution for Zr are as follows [20,22,23]: Ta$ Zr ¼ V0Li (3) Nb ...garnet phase. < CeO2 precipitation at grain boundaries increases grain boundary resistance . < Super-valent cation substitution likely stabilizes the...Introduction Li-ion batteries have played a vital role in the development of current generation mobile devices, microelectronics and electric vehicles [1]. Due

Nanotechnology: Societal Implications - Maximizing Benefit for Humanity. Report of the National Nanotechnology Initiative Workshop Held in Arlington, Virginia on 3-5 December 2003

DTIC Science & Technology

2005-01-01

trouble pulling up names. I’d like to be able to plug in a little additional memory sometimes. And as I was putting in my contacts this morning I...Industry ( GOALI ) and the Microelectronics Advanced Research Corporation/Department of Defense Focus Center Research Program are examples that deserve...Industry ( GOALI ) 49 gray goo 34 Greenpeace 3 H Harvard University 33 hazards 15 health 11, 47, 51, 81 history 57, 73 holistic approach 21

1988 IEEE Aerospace Applications Conference, Park City, UT, Feb. 7-12, 1988, Digest

NASA Astrophysics Data System (ADS)

The conference presents papers on microwave applications, data and signal processing applications, related aerospace applications, and advanced microelectronic products for the aerospace industry. Topics include a high-performance antenna measurement system, microwave power beaming from earth to space, the digital enhancement of microwave component performance, and a GaAs vector processor based on parallel RISC microprocessors. Consideration is also given to unique techniques for reliable SBNR architectures, a linear analysis subsystem for CSSL-IV, and a structured singular value approach to missile autopilot analysis.

Coffee-can-sized spacecraft

NASA Technical Reports Server (NTRS)

Jones, Ross M.

1988-01-01

The current status and potential scientific applications of intelligent 1-5-kg projectiles being developed by SDIO and DARPA for military missions are discussed. The importance of advanced microelectronics for such small spacecraft is stressed, and it is pointed out that both chemical rockets and EM launchers are currently under consideration for these lightweight exoatmospheric projectiles (LEAPs). Long-duration power supply is identified as the primary technological change required if LEAPs are to be used for interplanetary scientific missions, and the design concept of a solar-powered space-based railgun to accelerate LEAPs on such missions is considered.

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less

Macro management of microelectronics in India in 1990s

NASA Astrophysics Data System (ADS)

Gupta, Parmod K.

1992-08-01

Development of microelectronics is taking place at a very fast rate all over the globe, including India. New technologies are introduced at very short intervals in order to capture the consumer market. It is essential that these technologies are managed properly at the macro level in order to bring the desired results. Microelectronics plays a very vital role in office automation for achieving cost effective results in a highly competitive environment. Introduction of various facilities like laser printers, photo copiers, dictaphone-selectronic boards, electronic telexes, teleconference rooms, telephone answering machines, computer, word processors, sensors, etc. have all revolutionized the industry. Keeping the above in view, the present and future status of microelectronics, with special emphasis on its role in office automation in India, are discussed in detail in this paper.

Self-formed cylindrical microcapillaries through surface migration of silicon and their application to single-cell analysis

NASA Astrophysics Data System (ADS)

Zeng, Fan; Luo, Yuan; Yobas, Levent; Wong, Man

2013-05-01

Surface migration of monocrystalline silicon has been applied to demonstrate self-formed cylindrical microcapillaries with diameters from 0.8 to 2.8 µm based on the microstructured substrate topography. The microcapillaries are entirely enclosed in silicon and can be conveniently etched to create fluidic access ports and microchannels for their subsequent integration into functional microfluidic devices. Moreover, the microcapillaries can be thermally oxidized through their access ports with silica walls remain intact upon release from surrounding silicon in an effort to enhance optical clarity. Straight microcapillaries and microcapillaries with perpendicular turns and crossings (junctions) have all been fabricated and validated for fluidic continuity with a fluorescein solution pumped through. The utility of the microcapillaries has been showcased on particle traps in which biological cells are probed for single-cell impedance spectroscopy. The approach disclosed, given its full compatibility with semiconductor device fabrication, offers great potential towards intelligent cell and molecule-based devices merging microelectronics and microfluidics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperaturemore » compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.« less

The demise of plastic encapsulated microcircuit myths

NASA Astrophysics Data System (ADS)

Hakim, E. B.; Agarwal, R. K.; Pecht, M.

1994-10-01

Production of microelectronic devices encapsulated in solid, molded plastic packages has rapidly increased since the early 1980's. Today, millions of plastic-encapsulated devices are produced daily. On the other hand, only a few million hermetic (cavity) packages are produced per year. Reasons for the increased use of plastic-encapsulated packages include cost, availability, size, weight, quality, and reliability. Markets taking advantage of this technology range from computers and telecommunications to automotive uses. Yet, several industries, the military in particular, will not accept such devices. One reason for this reluctance to use the best available commercial parts is a perceived risk of poor reliability, derived from antiquated military specifications, standards, and handbooks; other common justifications cite differing environments; inadequate screens; inadequate test data, and required government audits of suppliers' processes. This paper describes failure mechanisms associated with plastic encapsulation and their elimination. It provides data indicating the relative reliability of cavity and solid-encapsulated packaging, and presents possible approaches to assuring quality and reliability in the procuring and applying this successful commercial technology.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis.

PubMed

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L; Terés, Lluís; Baumann, Reinhard R

2016-09-21

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

NASA Astrophysics Data System (ADS)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching.

PubMed

Chen, Yun; Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; Wong, Ching-Ping

2017-02-08

Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.

NASA Electronic Parts and Packaging (NEPP) Program - Update

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2010-01-01

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

Direct Prototyping of Patterned Nanoporous Carbon: A Route from Materials to On-chip Devices

PubMed Central

Shen, Caiwei; Wang, Xiaohong; Zhang, Wenfeng; Kang, Feiyu

2013-01-01

Prototyping of nanoporous carbon membranes with three-dimensional microscale patterns is significant for integration of such multifunctional materials into various miniaturized systems. Incorporating nano material synthesis into microelectronics technology, we present a novel approach to direct prototyping of carbon membranes with highly nanoporous structures inside. Membranes with significant thicknesses (1 ~ 40 μm) are rapidly prototyped at wafer level by combining nano templating method with readily available microfabrication techniques, which include photolithography, high-temperature annealing and etching. In particular, the high-surface-area membranes are specified as three-dimensional electrodes for micro supercapacitors and show high performance compared to reported ones. Improvements in scalability, compatibility and cost make the general strategy promising for batch fabrication of operational on-chip devices or full integration of three-dimensional nanoporous membranes with existing micro systems. PMID:23887486

Swimming Using Surface Acoustic Waves

PubMed Central

Bourquin, Yannyk; Cooper, Jonathan M.

2013-01-01

Microactuation of free standing objects in fluids is currently dominated by the rotary propeller, giving rise to a range of potential applications in the military, aeronautic and biomedical fields. Previously, surface acoustic waves (SAWs) have been shown to be of increasing interest in the field of microfluidics, where the refraction of a SAW into a drop of fluid creates a convective flow, a phenomenon generally known as SAW streaming. We now show how SAWs, generated at microelectronic devices, can be used as an efficient method of propulsion actuated by localised fluid streaming. The direction of the force arising from such streaming is optimal when the devices are maintained at the Rayleigh angle. The technique provides propulsion without any moving parts, and, due to the inherent design of the SAW transducer, enables simple control of the direction of travel. PMID:23431358

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sønsteby, Henrik Hovde, E-mail: henrik.sonsteby@kjemi.iuio.no; Nilsen, Ola; Fjellvåg, Helmer

2016-07-15

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer depositionmore » with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.« less

New nanocomposite surfaces and thermal interface materials based on mesoscopic microspheres, polymers and graphene flakes

NASA Astrophysics Data System (ADS)

Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna

2018-04-01

In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Generic three-dimensional wavelength routers based on cross connects of multilayer diffractive elements

NASA Astrophysics Data System (ADS)

Deng, Xuegong; Chen, Ray T.

2001-05-01

We report a generic method to construct 3D wavelength routers by adapting a novel design for multi-optical wavelength interconnects (MOWI's). Optical wavelength- selective (WS) interconnections are realized by resorting to layered diffractive phase elements. Besides, we simultaneously carry out several other integrated operations on the incident beams according to their wavelengths. We demonstrate an 4 X 4 inline 3D WS optical crossconnect and a 1D 1 X 8 WS perfect shuffler. The devices are well feasible for mass production by using current standard microelectronics technologies. It is plausible that the proposed WS MOWI scenario will find critical applications in module-to-module and board-to-board optical interconnect systems, as well as in other devices for short-link multi- wavelength networks that would benefit from function integration.

Challenges and advances in the field of self-assembled membranes.

PubMed

van Rijn, Patrick; Tutus, Murat; Kathrein, Christine; Zhu, Leilei; Wessling, Matthias; Schwaneberg, Ulrich; Böker, Alexander

2013-08-21

Self-assembled membranes are of vital importance in biological systems e.g. cellular and organelle membranes, however, more focus is being put on synthetic self-assembled membranes not only as an alternative for lipid membranes but also as an alternative for lithographic methods. More investigations move towards self-assembly processes because of the low-cost preparations, structural self-regulation and the ease of creating composite materials and tunable properties. The fabrication of new smart membrane materials via self-assembly is of interest for delivery vessels, size selective separation and purification, controlled-release materials, sensors and catalysts, scaffolds for tissue engineering, low dielectric constant materials for microelectronic devices, antireflective coatings and proton exchange membranes for polymer electrolyte membrane fuel cells. Polymers and nanoparticles offer the most straightforward approaches to create membrane structures. However, alternative approaches using small molecules or composite materials offer novel ultra-thin membranes or multi-functional membranes, respectively. Especially, the composite material membranes are regarded as highly promising since they offer the possibility to combine properties of different systems. The advantages of polymers which provide elastic and flexible yet stable matrices can be combined with nanoparticles being either inorganic, organic or even protein-based which offers pore-size control, catalytic activity or permeation regulation. It is therefore believed that at the interface of different disciplines with each offering different materials or approaches, the most novel and interesting membrane structures are going to be produced. The combinations and approaches presented in this review offer non-conventional self-assembled membrane materials which exhibit a high potential to advance membrane science and find more practical applications.

Catheter-Based Sensing In The Airways

NASA Astrophysics Data System (ADS)

Fouke, J. M.; Saunders, K. G.

1988-04-01

Studies attempting to define the role of the respiratory tract in heating and humidifying inspired air point to the need for sensing many variables including airway wall and airstream temperatures, humidity, and surface fluid pH and osmolarity. In order to make such measurements in vivo in human volunteers, catheter based technologies must be exploited both to assure subject safety and subject comfort. Miniturization of the electrodes or sensors becomes a top priority. This paper describes the use of thin-film microelectronic technology to fabricate a miniature, flexible sensor which can be placed directly onto the surface of the airway to measure the electrical conductance of the fluids present. From this information the osmolarity of the surface fluid was calculated. Physiologic evaluation of the device and corroboration of the calculations was performed in mongrel dogs. We also describe the successful application of current thermistor technology for the thermal mapping of the airways in humans in order to characterize the dynamic intrathoracic events that occur during breathing. The thermal probe consisted of a flexible polyvinyl tube that contained fourteen small thermistors fixed into the catheter. Data have been obtained in dozens of people, both normal subjects and asthmatic patients, under a variety of interventions. These data have substantively advanced the study of asthma, a particularly troublesome chronic obstructive pulmonary disorder.

Vertically Aligned and Interconnected SiC Nanowire Networks Leading to Significantly Enhanced Thermal Conductivity of Polymer Composites.

PubMed

Yao, Yimin; Zhu, Xiaodong; Zeng, Xiaoliang; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2018-03-21

Efficient heat removal via thermal management materials has become one of the most critical challenges in the development of modern microelectronic devices. However, previously reported polymer composites exhibit limited enhancement of thermal conductivity, even when highly loaded with thermally conductive fillers, because of the lack of efficient heat transfer pathways. Herein, we report vertically aligned and interconnected SiC nanowire (SiCNW) networks as efficient fillers for polymer composites, achieving significantly enhanced thermal conductivity. The SiCNW networks are produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to consolidate the nanowire junctions, exhibiting a hierarchical architecture in which honeycomb-like SiCNW layers are aligned. The composite obtained by infiltrating SiCNW networks with epoxy resin, at a relatively low SiCNW loading of 2.17 vol %, represents a high through-plane thermal conductivity (1.67 W m -1 K -1 ) compared to the pure matrix, which is equivalent to a significant enhancement of 406.6% per 1 vol % loading. The orderly SiCNW network which can act as a macroscopic expressway for phonon transport is believed to be the main contributor for the excellent thermal performance. This strategy provides insights for the design of high-performance composites with potential to be used in advanced thermal management materials.

Feasibility study of a latchup-based particle detector exploiting commercial CMOS technologies

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Matteucci, G.; Civera, P.; Demarchi, D.; Villani, G.; Weber, M.

2009-12-01

The stimulated ignition of latchup effects caused by external radiation has so far proved to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors devices, leaving the capability of sensing to external sensors. The paper first describes the state-of-the-art of the project and its development over the latest years, then the present and future studies are proposed. An elementary cell composed of two transistors connected in a thyristor structure is shown. The study begins using traditional bipolar transistors since the latchup effect is originated as a parasitic circuit composed of such devices. Then, an equivalent circuit built up of MOS transistors is exploited, resulting an even more promising and challenging configuration than that obtained via bipolar transistors. As the MOS transistors are widely used at present in microelectronics devices and sensors, a latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of signal sensors and radiation monitoring.

Center for Space Microelectronics Technology. 1993 Technical Report

NASA Technical Reports Server (NTRS)

1995-01-01

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

Thermo-mechanical properties and integrity of metallic interconnects in microelectronics

NASA Astrophysics Data System (ADS)

Ege, Efe Sinan

In this dissertation, combined numerical (Finite Element Method) and experimental efforts were undertaken to study thermo-mechanical behavior in microelectronic devices. Interconnects, including chip-level metallization and package-level solder joints, are used to join many of the circuit parts in modern equipment. The dissertation is structured into six independent studies after the introductory chapter. The first two studies focus on thermo-mechanical fatigue of solder joints. Thermo-mechanical fatigue, in the form of damage along a microstructurally coarsened region in tin-lead solder, is analyzed along with the effects of intermetallic morphology. Also, lap-shear testing is modeled to characterize the joint and to investigate the validity of experimental data from different solder and substrate geometries. In the third study, the effects of pre-machined holes on strain localization and overall ductility in bulk eutectic tin-lead alloy is examined. Finite element analyses, taking into account the viscoplastic response, were carried out to provide a mechanistic rationale to corroborate the experimental findings. The fourth study concerns chip-level copper interconnects. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without the thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. This study is followed by a chapter on atomistics of interface-mediated plasticity in thin metallic films. The objective is to gain fundamental insight into the underlying mechanisms affecting the mechanical response of nanoscale thin films. The final study investigates the effect of microstructural heterogeneity on indentation response, for the purpose of raising awareness of the uncertainties involved in applying indentation techniques in probing mechanical properties of miniaturized devices.

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Computational aerodynamics development and outlook /Dryden Lecture in Research for 1979/

NASA Technical Reports Server (NTRS)

Chapman, D. R.

1979-01-01

Some past developments and current examples of computational aerodynamics are briefly reviewed. An assessment is made of the requirements on future computer memory and speed imposed by advanced numerical simulations, giving emphasis to the Reynolds averaged Navier-Stokes equations and to turbulent eddy simulations. Experimental scales of turbulence structure are used to determine the mesh spacings required to adequately resolve turbulent energy and shear. Assessment also is made of the changing market environment for developing future large computers, and of the projections of micro-electronics memory and logic technology that affect future computer capability. From the two assessments, estimates are formed of the future time scale in which various advanced types of aerodynamic flow simulations could become feasible. Areas of research judged especially relevant to future developments are noted.

Sandia Technology engineering and science accomplishments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

This report briefly discusses the following research being conducted at Sandia Laboratories: Advanced Manufacturing -- Sandia technology helps keep US industry in the lead; Microelectronics-Sandia`s unique facilities transform research advances into manufacturable products; Energy -- Sandia`s energy programs focus on strengthening industrial growth and political decisionmaking; Environment -- Sandia is a leader in environmentally conscious manufacturing and hazardous waste reduction; Health Care -- New biomedical technologies help reduce cost and improve quality of health care; Information & Computation -- Sandia aims to help make the information age a reality; Transportation -- This new initiative at the Labs will help improvemore » transportation, safety,l efficiency, and economy; Nonproliferation -- Dismantlement and arms control are major areas of emphasis at Sandia; and Awards and Patents -- Talented, dedicated employees are the backbone of Sandia`s success.« less

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Design, processing and testing of LSI arrays, hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.; Rothrock, C. W.

1979-01-01

Mathematical cost models previously developed for hybrid microelectronic subsystems were refined and expanded. Rework terms related to substrate fabrication, nonrecurring developmental and manufacturing operations, and prototype production are included. Sample computer programs were written to demonstrate hybrid microelectric applications of these cost models. Computer programs were generated to calculate and analyze values for the total microelectronics costs. Large scale integrated (LST) chips utilizing tape chip carrier technology were studied. The feasibility of interconnecting arrays of LSU chips utilizing tape chip carrier and semiautomatic wire bonding technology was demonstrated.

Wireless microsensor network solutions for neurological implantable devices

NASA Astrophysics Data System (ADS)

Abraham, Jose K.; Whitchurch, Ashwin; Varadan, Vijay K.

2005-05-01

The design and development of wireless mocrosensor network systems for the treatment of many degenerative as well as traumatic neurological disorders is presented in this paper. Due to the advances in micro and nano sensors and wireless systems, the biomedical sensors have the potential to revolutionize many areas in healthcare systems. The integration of nanodevices with neurons that are in communication with smart microsensor systems has great potential in the treatment of many neurodegenerative brain disorders. It is well established that patients suffering from either Parkinson"s disease (PD) or Epilepsy have benefited from the advantages of implantable devices in the neural pathways of the brain to alter the undesired signals thus restoring proper function. In addition, implantable devices have successfully blocked pain signals and controlled various pelvic muscles in patients with urinary and fecal incontinence. Even though the existing technology has made a tremendous impact on controlling the deleterious effects of disease, it is still in its infancy. This paper presents solutions of many problems of today's implantable and neural-electronic interface devices by combining nanowires and microelectronics with BioMEMS and applying them at cellular level for the development of a total wireless feedback control system. The only device that will actually be implanted in this research is the electrodes. All necessary controllers will be housed in accessories that are outside the body that communicate with the implanted electrodes through tiny inductively-coupled antennas. A Parkinson disease patient can just wear a hat-system close to the implantable neural probe so that the patient is free to move around, while the sensors continually monitor, record, transmit all vital information to health care specialist. In the event of a problem, the system provides an early warning to the patient while they are still mobile thus providing them the opportunity to react and trigger the feed back system or contact a point-of-care office that can remotely control the implantable system. The remote monitoring technology can be adaptable to EEG monitoring of children with epilepsy, implantable cardioverters/defibrillators, pacemakers, chronic pain management systems, treatment for sleep disorders, patients with implantable devices for diabetes. In addition, the development of a wireless neural electronics interface to detect, transmit and analyze neural signals could help patients with spinal injuries to regain some semblance of mobile activity.

Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

NASA Astrophysics Data System (ADS)

Sacher, Wesley David

Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

From Microelectronics to Nanoelectronics

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

We highlight key events in over 100 years of electronic amplifiers and their incorporation in computers and communication in order to appreciate the electron as man's most powerful token of information. We recognize that it has taken about 25 years or almost a generation for inventions to make it into new products, and that, within these periods, it still took major campaigns, like the Sputnik effect or what we shall call 10× programs, to achieve major technology steps. From Lilienfeld's invention 1926 of the solid-state field-effect triode to its realization 1959 in Kahng's MOS field-effect transistor, it took 33 years, and this pivotal year also saw the first planar integrated silicon circuit as patented by Noyce. This birth of the integrated microchip launched the unparalleled exponential growth of microelectronics with many great milestones. Among these, we point out the 3D integration of CMOS transistors by Gibbons in 1979 and the related Japanese program on Future Electron Devices (FED). The 3D domain has finally arrived as a broad development since 2005. Consecutively, we mark the neural networks on-chip of 1989 by Mead and others, now, 20 years later, a major project by DARPA. We highlight cooperatives like SRC and SEMATECH, their impact on progress and more recent nanoelectronic milestones until 2010.

Excimer-laser-induced surface treatments on metal and ceramic materials: applications to automotive, aerospace, and microelectronic industries

NASA Astrophysics Data System (ADS)

Autric, Michel L.

1999-09-01

Surface treatments by laser irradiation can improve materials properties in terms of mechanical and physico- chemical behaviors, these improvements being related to the topography, the hardness, the microstructure, the chemical composition. Up to now, the use of excimer lasers for industrial applications remained marginal in spite of the interest related to the short wavelength (high photon energy and better energetic coupling with materials and reduced thermal effects in the bulk material). Up to now, the main limitations concerned the beam quality, the beam delivery, the gas handling and the relatively high investment cost. At this time, the cost of laser devices is going down and the ultraviolet radiation can be conducted through optical fibers. These two elements give new interest in using excimer laser for industrial applications. The main objective of this research program which we are involved in, is to underline some materials processing applications for automotive, aerospace or microelectronic industries for which it could be more interesting to use excimer lasers (minimized thermal effects). This paper concerns the modifications of the roughness, porosity, hardness, structure, phase, residual stresses, chemical composition of the surface of materials such as metallic alloys (aluminum, steel, cast iron, titanium, and ceramics (oxide, nitride, carbide,...) irradiated by KrF and XeCl excimer lasers.

Superconducting Microelectronics.

ERIC Educational Resources Information Center

Henry, Richard W.

1984-01-01

Discusses superconducting microelectronics based on the Josephson effect and its advantages over conventional integrated circuits in speed and sensitivity. Considers present uses in standards laboratories (voltage) and in measuring weak magnetic fields. Also considers future applications in superfast computer circuitry using Superconducting…

Electromagnetics and Electrothermal Approach to Evaluate Failures in Microelectronic Devices Caused by Electrostatic Discharges: Stochastical Aspects of the Device Reliability.

DTIC Science & Technology

1987-08-01

C C CALL THE ELSV SUBROUTINE TO INVERT THE MATRIX. EPO .1D-09 . CALL ELSV(Z,AUX1,AUX2,tN, DE ,EP) WRITE(93,118) DE 118 FORMAT(5X,’ DE -,1E) C C MULTIPLY...IFCABS(W).LT.EP)GO TO 17 DO 13 I=1,N Y’=A( I,K)/W DO 13 J=1,N 13 AC I,J)=A(I,J)-B(J)*Y DE =O.DO DO.15 J=1,N B(J)0O.DO DO 16 I=1,N 16 B(J)=B(J)+A(I,J...15 DE - DE +C(J)*B(J) RETURN 1. DE -1.DO RETURN -18- IMPLICIT COMPLEX*16 (C) IMPLICIT REAL*8 (A-B,E-H,P-z) C C C THIS PROGRAM GIVES THE POTENTIAL AND THE

Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ya'akobovitz, A.; Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University, Beer-Sheva; Bedewy, M.

2015-02-02

Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we findmore » that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.« less

Single-ion adsorption and switching in carbon nanotubes

DOE PAGES

Bushmaker, Adam W.; Oklejas, Vanessa; Walker, Don; ...

2016-01-25

Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes,more » by the mechanism of ion potentialinduced carrier depletion, which is supported by density functional and Landauer transport theory. Lastly, our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.« less

Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

NASA Astrophysics Data System (ADS)

Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

2015-02-01

Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

Establishing a Novel Modeling Tool: A Python-Based Interface for a Neuromorphic Hardware System

PubMed Central

Brüderle, Daniel; Müller, Eric; Davison, Andrew; Muller, Eilif; Schemmel, Johannes; Meier, Karlheinz

2008-01-01

Neuromorphic hardware systems provide new possibilities for the neuroscience modeling community. Due to the intrinsic parallelism of the micro-electronic emulation of neural computation, such models are highly scalable without a loss of speed. However, the communities of software simulator users and neuromorphic engineering in neuroscience are rather disjoint. We present a software concept that provides the possibility to establish such hardware devices as valuable modeling tools. It is based on the integration of the hardware interface into a simulator-independent language which allows for unified experiment descriptions that can be run on various simulation platforms without modification, implying experiment portability and a huge simplification of the quantitative comparison of hardware and simulator results. We introduce an accelerated neuromorphic hardware device and describe the implementation of the proposed concept for this system. An example setup and results acquired by utilizing both the hardware system and a software simulator are demonstrated. PMID:19562085

Establishing a novel modeling tool: a python-based interface for a neuromorphic hardware system.

PubMed

Brüderle, Daniel; Müller, Eric; Davison, Andrew; Muller, Eilif; Schemmel, Johannes; Meier, Karlheinz

2009-01-01

Neuromorphic hardware systems provide new possibilities for the neuroscience modeling community. Due to the intrinsic parallelism of the micro-electronic emulation of neural computation, such models are highly scalable without a loss of speed. However, the communities of software simulator users and neuromorphic engineering in neuroscience are rather disjoint. We present a software concept that provides the possibility to establish such hardware devices as valuable modeling tools. It is based on the integration of the hardware interface into a simulator-independent language which allows for unified experiment descriptions that can be run on various simulation platforms without modification, implying experiment portability and a huge simplification of the quantitative comparison of hardware and simulator results. We introduce an accelerated neuromorphic hardware device and describe the implementation of the proposed concept for this system. An example setup and results acquired by utilizing both the hardware system and a software simulator are demonstrated.

Design and analysis of a high Q MEMS passive RF filter

NASA Astrophysics Data System (ADS)

Rathee, Vishal; Pande, Rajesh

2016-04-01

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver system. This is due to some excellent properties of the MEMS devices like low loss, low cost and excellent isolation. This paper presents a design of high performance MEMS passive band pass filter, consisting of L and C with improved quality factor and insertion loss less than the reported filters. In this paper we have presented a design of 2nd order band pass filter with 2.4GHz centre frequency and 83MHz bandwidth for Bluetooth application. The simulation results showed improved Q-factor of 34 and Insertion loss of 1.7dB to 1.9dB. The simulation results needs to be validated by fabricating the device, fabrication flow of which is also presented in the paper.

Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

PubMed Central

Zhao, Lina; Lu, Zengxing; Zhang, Fengyuan; Tian, Guo; Song, Xiao; Li, Zhongwen; Huang, Kangrong; Zhang, Zhang; Qin, Minghui; SujuanWu; Lu, Xubing; Zeng, Min; Gao, Xingsen; Dai, Jiyan; Liu, Jun-Ming

2015-01-01

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices. PMID:25853937

Smart substrates: Making multi-chip modules smarter

NASA Astrophysics Data System (ADS)

Wunsch, T. F.; Treece, R. K.

1995-05-01

A novel multi-chip module (MCM) design and manufacturing methodology which utilizes active CMOS circuits in what is normally a passive substrate realizes the 'smart substrate' for use in highly testable, high reliability MCMS. The active devices are used to test the bare substrate, diagnose assembly errors or integrated circuit (IC) failures that require rework, and improve the testability of the final MCM assembly. A static random access memory (SRAM) MCM has been designed and fabricated in Sandia Microelectronics Development Laboratory in order to demonstrate the technical feasibility of this concept and to examine design and manufacturing issues which will ultimately determine the economic viability of this approach. The smart substrate memory MCM represents a first in MCM packaging. At the time the first modules were fabricated, no other company or MCM vendor had incorporated active devices in the substrate to improve manufacturability and testability, and thereby improve MCM reliability and reduce cost.

Evidence for adverse reproductive outcomes among women microelectronic assembly workers.

PubMed Central

Huel, G; Mergler, D; Bowler, R

1990-01-01

Microelectronics assembly entails complex processes where several potentially fetotoxic chemical compounds are used extensively. This study was undertaken to assess the potential adverse reproductive outcomes among former women workers in a microelectronics assembly plant in New Mexico with respect to a comparable population from the same geographical region and to examine the relation between these outcomes and employment history in this plant. After matching a pool of 143 former microelectronic female workers and 105 referents, 90 former microelectronic female worker-referent pairs were constituted (representing 302 and 324 pregnancies in former workers and referents respectively). The odds ratio (for pair matching design) of spontaneous abortion among women workers, before beginning to assemble microelectronic components, was 0.9 (chi 2 = 0.04; NS). After the beginning of employment this odds ratio became 5.6 (chi 2 = 9.8; p less than 1%). This estimated odds ratio decreased to 4.0, taking into account the increased risk for spontaneous abortion in previous pregnancies before employment (chi 2 = 5.4; p less than 5%). It was not possible to determine if this effect was reversible owing to the small number of pairs available after employment. The findings of this study corroborate the results of former studies that suggest a potential association between electronic manufacturing activity and risk of spontaneous abortion. Although the organic solvents were suspected of being the potential risk factor, this study was inconclusive from this point of view. Nevertheless, these investigations may provide some insight into reproductive outcomes among female workers exposed to solvents. PMID:2378817

Center for Space Microelectronics Technology 1988-1989 technical report

NASA Technical Reports Server (NTRS)

Olsen, Peggy

1990-01-01

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1991-01-01

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

Biochips Containing Arrays of Carbon-Nanotube Electrodes

NASA Technical Reports Server (NTRS)

Li, Jun; Meyyappan, M.; Koehne, Jessica; Cassell, Alan; Chen, Hua

2008-01-01

Biochips containing arrays of nanoelectrodes based on multiwalled carbon nanotubes (MWCNTs) are being developed as means of ultrasensitive electrochemical detection of specific deoxyribonucleic acid (DNA) and messenger ribonucleic acid (mRNA) biomarkers for purposes of medical diagnosis and bioenvironmental monitoring. In mass production, these biochips could be relatively inexpensive (hence, disposable). These biochips would be integrated with computer-controlled microfluidic and microelectronic devices in automated hand-held and bench-top instruments that could be used to perform rapid in vitro genetic analyses with simplified preparation of samples. Carbon nanotubes are attractive for use as nanoelectrodes for detection of biomolecules because of their nanoscale dimensions and their chemical properties.

Microfluidic Automation using elastomeric valves and droplets: reducing reliance on external controllers

PubMed Central

Kim, Sung-Jin; Lai, David; Park, Joong Yull; Yokokawa, Ryuji

2012-01-01

This paper gives an overview of elastomeric valve- and droplet-based microfluidic systems designed to minimize the need of external pressure to control fluid flow. This concept article introduces the working principle of representative components in these devices along with relevant biochemical applications. This is followed by providing a perspective on the roles of different microfluidic valves and systems through comparison of their similarities and differences with transistors (valves) and systems in microelectronics. Despite some physical limitation of drawing analogies from electronic circuits, automated microfluidic circuit design can gain insights from electronic circuits to minimize external control units, while implementing high complexity and throughput analysis. PMID:22761019

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xi; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332; Thadesar, Paragkumar A.

2014-09-15

In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.

MOEMs-based new functionalities for future instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean; Hinglais, Emmanuel; Villenave, Michel

2017-11-01

Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. MOEMS devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. CNES has initiated a study with LAM and TAS for listing the new functions associated with several types of MEMS (programmable slits, programmable micro-diffraction gratings, micro-deformable mirrors). Instrumental applications are then derived and promising concepts are described.

The Strength of the Metal. Aluminum Oxide Interface

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1984-01-01

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Application of He ion microscopy for material analysis

NASA Astrophysics Data System (ADS)

Altmann, F.; Simon, M.; Klengel, R.

2009-05-01

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.

Programmable wide field spectrograph for earth observation

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Lanzoni, Patrick; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean

2017-11-01

In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. These devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. French and European space agencies, the Centre National d'Etudes Spatiales (CNES) and the European Space Agency (ESA) have initiated several studies with LAM and TAS for listing the new functions associated with several types of MEMS, and developing new ideas of instruments.

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

NASA Technical Reports Server (NTRS)

Megardis, C. M.; Poulikakos, D.; Diversiev, G.; Boomsma, K.; Xiong, B.; Nayagam, V.

1999-01-01

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat smooth substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work will be ultimately performed in microgravity in order to allow for the use of larger solder droplets which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamics groups (Re, We).

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

NASA Technical Reports Server (NTRS)

Poulikakos, Dimos; Megaridis, Constantine M.; Vedha-Nayagam, M.

1996-01-01

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work is performed in microgravity to allow for the use of larger solder droplets that make feasible the performance of accurate measurements while maintaining similitude of the relevant fluid dynamics groups (Re, We) and keeping the effect of gravity negligible.

Computer-Controlled System for Plasma Ion Energy Auto-Analyzer

NASA Astrophysics Data System (ADS)

Wu, Xian-qiu; Chen, Jun-fang; Jiang, Zhen-mei; Zhong, Qing-hua; Xiong, Yu-ying; Wu, Kai-hua

2003-02-01

A computer-controlled system for plasma ion energy auto-analyzer was technically studied for rapid and online measurement of plasma ion energy distribution. The system intelligently controls all the equipments via a RS-232 port, a printer port and a home-built circuit. The software designed by Lab VIEW G language automatically fulfils all of the tasks such as system initializing, adjustment of scanning-voltage, measurement of weak-current, data processing, graphic export, etc. By using the system, a few minutes are taken to acquire the whole ion energy distribution, which rapidly provides important parameters of plasma process techniques based on semiconductor devices and microelectronics.

Micro guidance and control synthesis: New components, architectures, and capabilities

NASA Technical Reports Server (NTRS)

Mettler, Edward; Hadaegh, Fred Y.

1993-01-01

New GN&C (guidance, navigation and control) system capabilities are shown to arise from component innovations that involve the synergistic use of microminiature sensors and actuators, microelectronics, and fiber optics. Micro-GN&C system and component concepts are defined that include micro-actuated adaptive optics, micromachined inertial sensors, fiber-optic data nets and light-power transmission, and VLSI microcomputers. The thesis is advanced that these micro-miniaturization products are capable of having a revolutionary impact on space missions and systems, and that GN&C is the pathfinder micro-technology application that can bring that about.

When science meets capitalism

NASA Astrophysics Data System (ADS)

Parker, Greg

2008-03-01

When I joined the University of Southampton's microelectronics group in 1987 after spending 10 years in industry, I shared some of my commercial ideas for advancing the group into the 21st century with my academic colleagues. To say that my personal vision of paradise was close to their vision of hell is probably a pretty accurate observation. Two decades on, I now understand why they felt that way. Science for Sale contains a lot of information that explains this vast difference in perception, and the book also does a good job of highlighting how academia and industry differ on practical and ethical levels.

100 Years of the Physics of Diodes

NASA Astrophysics Data System (ADS)

Luginsland, John

2013-10-01

The Child-Langmuir Law (CL), discovered 100 years ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space-charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high-energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nano-scale quantum diodes and plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light-emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We will review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic, field, and photo-emission) to the space charge limited state (CL) will be addressed, especially highlighting important simulation and experimental developments in selected contemporary areas of study. This talk will stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion. Also emphasized is the role of non-equilibrium phenomena associated with materials and plasmas in close contact. Work supported by the Air Force Office of Scientific Research.

Development of micromachine tool prototypes for microfactories

NASA Astrophysics Data System (ADS)

Kussul, E.; Baidyk, T.; Ruiz-Huerta, L.; Caballero-Ruiz, A.; Velasco, G.; Kasatkina, L.

2002-11-01

At present, many areas of industry have strong tendencies towards miniaturization of products. Mechanical components of these products as a rule are manufactured using conventional large-scale equipment or micromechanical equipment based on microelectronic technology (MEMS). The first method has some drawbacks because conventional large-scale equipment consumes much energy, space and material. The second method seems to be more advanced but has some limitations, for example, two-dimensional (2D) or 2.5-dimensional shapes of components and materials compatible with silicon technology. In this paper, we consider an alternative technology of micromechanical device production. This technology is based on micromachine tools (MMT) and microassembly devices, which can be produced as sequential generations of microequipment. The first generation can be produced by conventional large-scale equipment. The machine tools of this generation can have overall sizes of 100-200 mm. Using microequipment of this generation, second generation microequipment having smaller overall sizes can be produced. This process can be repeated to produce generations of micromachine tools having overall sizes of some millimetres. In this paper we describe the efforts and some results of first generation microequipment prototyping. A micromachining centre having an overall size of 130 × 160 × 85 mm3 was produced and characterized. This centre has allowed us to manufacture micromechanical details having sizes from 50 µm to 5 mm. These details have complex three-dimensional shapes (for example, screw, gear, graduated shaft, conic details, etc), and are made from different materials, such as brass, steel, different plastics etc. We have started to investigate and to make prototypes of the assembly microdevices controlled by a computer vision system. In this paper we also describe an example of the applications (microfilters) for the proposed technology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhter, Perveen; Huang, Mengbing, E-mail: mhuang@albany.edu; Spratt, William

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm,more » and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.« less

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1992-01-01

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

Nanomaterials at the neural interface.

PubMed

Scaini, Denis; Ballerini, Laura

2018-06-01

Interfacing the nervous system with devices able to efficiently record or modulate the electrical activity of neuronal cells represents the underlying foundation of future theranostic applications in neurology and of current openings in neuroscience research. These devices, usually sensing cell activity via microelectrodes, should be characterized by safe working conditions in the biological milieu together with a well-controlled operation-life. The stable device/neuronal electrical coupling at the interface requires tight interactions between the electrode surface and the cell membrane. This neuro-electrode hybrid represents the hyphen between the soft nature of neural tissue, generating electrical signals via ion motions, and the rigid realm of microelectronics and medical devices, dealing with electrons in motion. Efficient integration of these entities is essential for monitoring, analyzing and controlling neuronal signaling but poses significant technological challenges. Improving the cell/electrode interaction and thus the interface performance requires novel engineering of (nano)materials: tuning at the nanoscale electrode's properties may lead to engineer interfacing probes that better camouflaged with their biological target. In this brief review, we highlight the most recent concepts in nanotechnologies and nanomaterials that might help reducing the mismatch between tissue and electrode, focusing on the device's mechanical properties and its biological integration with the tissue. Copyright © 2017 Elsevier Ltd. All rights reserved.

Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

ERIC Educational Resources Information Center

Watanabe, Susumu

1986-01-01

This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

The LER/LWR metrology challenge for advance process control through 3D-AFM and CD-SEM

NASA Astrophysics Data System (ADS)

Faurie, P.; Foucher, J.; Foucher, A.-L.

2009-12-01

The continuous shrinkage in dimensions of microelectronic devices has reached such level, with typical gate length in advance R&D of less than 20nm combine with the introduction of new architecture (FinFET, Double gate...) and new materials (porous interconnect material, 193 immersion resist, metal gate material, high k materials...), that new process parameters have to be well understood and well monitored to guarantee sufficient production yield in a near future. Among these parameters, there are the critical dimensions (CD) associated to the sidewall angle (SWA) values, the line edge roughness (LER) and the line width roughness (LWR). Thus, a new metrology challenge has appeared recently and consists in measuring "accurately" the fabricated patterns on wafers in addition to measure the patterns on a repeatable way. Therefore, a great effort has to be done on existing techniques like CD-SEM, Scatterometry and 3D-AFM in order to develop them following the two previous criteria: Repeatability and Accuracy. In this paper, we will compare the 3D-AFM and CD-SEM techniques as a mean to measure LER and LWR on silicon and 193 resist and point out CD-SEM impact on the material during measurement. Indeed, depending on the material type, the interaction between the electron beam and the material or between the AFM tip and the material can vary a lot and subsequently can generate measurements bias. The first results tend to show that depending on CD-SEM conditions (magnification, number of acquisition frames) the final outputs can vary on a large range and therefore show that accuracy in such measurements are really not obvious to obtain. On the basis of results obtained on various materials that present standard sidewall roughness, we will show the limit of each technique and will propose different ways to improve them in order to fulfil advance roadmap requirements for the development of the next IC generation.

Photonic technology revolution influence on the defence area

NASA Astrophysics Data System (ADS)

Galas, Jacek; Litwin, Dariusz; Błocki, Narcyz; Daszkiewicz, Marek

2017-10-01

Revolutionary progress in the photonic technology provides the ability to develop military systems of new properties not possible to obtain with the use of classical technologies. In recent years, this progress has resulted in developing advanced, complex, multifunctional and relatively cheap Photonic Integrated Circuits (PIC) or Hybrid Photonics Circuits (HPC) built of a collection of standardized optical, optoelectronic and photonic components. This idea is similar to the technology of Electronic Integrated Circuits, which has revolutionized the microelectronic market. The novel approach to photonic technology is now revolutionizing the photonics' market. It simplifies the photonics technology and enables creation of technological centers for designing, development and production of advanced optical and photonic systems in the EU and other countries. This paper presents some selected photonic technologies and their impact on such defense systems like radars, radiolocation, telecommunication, and radio-communication systems.

Field enhancement in plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Piltan, Shiva; Sievenpiper, Dan

2018-05-01

Efficient generation of charge carriers from a metallic surface is a critical challenge in a wide variety of applications including vacuum microelectronics and photo-electrochemical devices. Replacing semiconductors with vacuum/gas as the medium of electron transport offers superior speed, power, and robustness to radiation and temperature. We propose a metallic resonant surface combining optical and electrical excitations of electrons and significantly reducing powers required using plasmon-induced enhancement of confined electric field. The properties of the device are modeled using the exact solution of the time-dependent Schrödinger equation at the barrier. Measurement results exhibit strong agreement with an analytical solution, and allow us to extract the field enhancement factor at the surface. Significant photocurrents are observed using combination of {{W}} {{{c}}{{m}}}-2 optical power and 10 V DC excitation on the surface. The model suggests optical field enhancement of 3 orders of magnitude at the metal interface due to plasmonic resonance. This simple planar structure provides valuable evidence on the electron emission mechanisms involved and it can be used for implementation of semiconductor compatible vacuum devices.

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

PubMed

Tang, Wei; Picraux, S Tom; Huang, Jian Yu; Gusak, Andriy M; Tu, King-Ning; Dayeh, Shadi A

2013-06-12

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. Here, using in situ high-resolution transmission electron microscopy (HRTEM), we capture single events during heterogeneous nucleation and atomic layer reaction of nickel silicide at various crystalline boundaries in Si nanochannels for the first time. We show through systematic experiments and analytical modeling that unlike other typical face-centered cubic materials such as copper or silicon the twin defects in NiSi2 have high interfacial energies. We observe that these twin defects dramatically change the behavior of new phase nucleation and can have direct implications for ultrascaled devices that are prone to defects or may utilize them to improve device performance.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

PubMed Central

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L.; Terés, Lluís; Baumann, Reinhard R.

2016-01-01

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement. PMID:27649784

Current state and future direction of computer systems at NASA Langley Research Center

NASA Technical Reports Server (NTRS)

Rogers, James L. (Editor); Tucker, Jerry H. (Editor)

1992-01-01

Computer systems have advanced at a rate unmatched by any other area of technology. As performance has dramatically increased there has been an equally dramatic reduction in cost. This constant cost performance improvement has precipitated the pervasiveness of computer systems into virtually all areas of technology. This improvement is due primarily to advances in microelectronics. Most people are now convinced that the new generation of supercomputers will be built using a large number (possibly thousands) of high performance microprocessors. Although the spectacular improvements in computer systems have come about because of these hardware advances, there has also been a steady improvement in software techniques. In an effort to understand how these hardware and software advances will effect research at NASA LaRC, the Computer Systems Technical Committee drafted this white paper to examine the current state and possible future directions of computer systems at the Center. This paper discusses selected important areas of computer systems including real-time systems, embedded systems, high performance computing, distributed computing networks, data acquisition systems, artificial intelligence, and visualization.

Microelectronics and Computers in Medicine.

ERIC Educational Resources Information Center

Meindl, James D.

1982-01-01

The use of microelectronics and computers in medicine is reviewed, focusing on medical research; medical data collection, storage, retrieval, and manipulation; medical decision making; computed tomography; ultrasonic imaging; role in clinical laboratories; and use as adjuncts for diagnostic tests, monitors of critically-ill patients, and with the…

Pre-release plastic packaging of MEMS and IMEMS devices

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

A method is disclosed for pre-release plastic packaging of MEMS and IMEMS devices. The method can include encapsulating the MEMS device in a transfer molded plastic package. Next, a perforation can be made in the package to provide access to the MEMS elements. The non-ablative material removal process can include wet etching, dry etching, mechanical machining, water jet cutting, and ultrasonic machining, or any combination thereof. Finally, the MEMS elements can be released by using either a wet etching or dry plasma etching process. The MEMS elements can be protected with a parylene protective coating. After releasing the MEMS elements, an anti-stiction coating can be applied. The perforating step can be applied to both sides of the device or package. A cover lid can be attached to the face of the package after releasing any MEMS elements. The cover lid can include a window for providing optical access. The method can be applied to any plastic packaged microelectronic device that requires access to the environment, including chemical, pressure, or temperature-sensitive microsensors; CCD chips, photocells, laser diodes, VCSEL's, and UV-EPROMS. The present method places the high-risk packaging steps ahead of the release of the fragile portions of the device. It also provides protection for the die in shipment between the molding house and the house that will release the MEMS elements and subsequently treat the surfaces.

Organic mixed conductors for bioelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2016-09-01

Direct measurement and stimulation of electrophysiological activity is a staple of neural and cardiac health monitoring, diagnosis and/or therapy. The ability to sensitively detect these signals can be enhanced by organic electronic materials that show mixed conduction properties (both electronic and ionic transport) in order to bridge the inherent mismatch that is prevalent between biological systems and traditional microelectronic materials/devices. Organic electrochemical transistors (OECTs) are one class of devices that utilize organic mixed conductors as the transistor channel, and have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance. These devices are fabricated in flexible, conformable form factors for in vivo recordings of epileptic activity, and for cutaneous EEG and ECG recordings in human subjects. The majority of high performance devices are based on conducting polymers such as poly(3,4-ethylenedioxythiophene) :poly(styrenesulfonate), PEDOT:PSS. By investigating PEDOT-based materials and devices, we are able to construct design rules for new formulations/materials. Introducing glycolated side chains to carefully selected semiconducting polymer backbones has enabled a new class high performance bioelectronic materials that feature high volumetric capacitance, transconductance >10mS (device dimensions ca. 10um), and steep subthreshold switching characteristics. A sub-set of these materials outperform PEDOT:PSS and shows significant promise for low power in vitro and in vivo biosensing applications.

Vacuum mechatronics

NASA Technical Reports Server (NTRS)

Hackwood, Susan; Belinski, Steven E.; Beni, Gerardo

1989-01-01

The discipline of vacuum mechatronics is defined as the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. The importance of vacuum mechatronics is growing with an increased application of vacuum in space studies and in manufacturing for material processing, medicine, microelectronics, emission studies, lyophylisation, freeze drying and packaging. The quickly developing field of vacuum mechatronics will also be the driving force for the realization of an advanced era of totally enclosed clean manufacturing cells. High technology manufacturing has increasingly demanding requirements for precision manipulation, in situ process monitoring and contamination-free environments. To remove the contamination problems associated with human workers, the tendency in many manufacturing processes is to move towards total automation. This will become a requirement in the near future for e.g., microelectronics manufacturing. Automation in ultra-clean manufacturing environments is evolving into the concept of self-contained and fully enclosed manufacturing. A Self Contained Automated Robotic Factory (SCARF) is being developed as a flexible research facility for totally enclosed manufacturing. The construction and successful operation of a SCARF will provide a novel, flexible, self-contained, clean, vacuum manufacturing environment. SCARF also requires very high reliability and intelligent control. The trends in vacuum mechatronics and some of the key research issues are reviewed.

Field-programmable lab-on-a-chip based on microelectrode dot array architecture.

PubMed

Wang, Gary; Teng, Daniel; Lai, Yi-Tse; Lu, Yi-Wen; Ho, Yingchieh; Lee, Chen-Yi

2014-09-01

The fundamentals of electrowetting-on-dielectric (EWOD) digital microfluidics are very strong: advantageous capability in the manipulation of fluids, small test volumes, precise dynamic control and detection, and microscale systems. These advantages are very important for future biochip developments, but the development of EWOD microfluidics has been hindered by the absence of: integrated detector technology, standard commercial components, on-chip sample preparation, standard manufacturing technology and end-to-end system integration. A field-programmable lab-on-a-chip (FPLOC) system based on microelectrode dot array (MEDA) architecture is presented in this research. The MEDA architecture proposes a standard EWOD microfluidic component called 'microelectrode cell', which can be dynamically configured into microfluidic components to perform microfluidic operations of the biochip. A proof-of-concept prototype FPLOC, containing a 30 × 30 MEDA, was developed by using generic integrated circuits computer aided design tools, and it was manufactured with standard low-voltage complementary metal-oxide-semiconductor technology, which allows smooth on-chip integration of microfluidics and microelectronics. By integrating 900 droplet detection circuits into microelectrode cells, the FPLOC has achieved large-scale integration of microfluidics and microelectronics. Compared to the full-custom and bottom-up design methods, the FPLOC provides hierarchical top-down design approach, field-programmability and dynamic manipulations of droplets for advanced microfluidic operations.

Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices

NASA Astrophysics Data System (ADS)

Yoon, Sang Hoon

The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic orientation of the films, which is explained by the phase transformation that occurs from amorphous pyrolized film to crystalline film. Sputtered ZnO films do not show a strong dependence on the parameters, possibly indicating a reduced energy barrier for the growth of ZnO film due to plasma energy. Based on an understanding of the relationship between process and thin film structure, the growth mechanism of CSD ZnO is proposed. The devices are fabricated on 4-inch silicon wafers by a microelectronic fabrication method. The fabrication procedure and issues relating to device fabrication are discussed.

Proceedings of the International Conference on Vacuum Microelectronics (2nd) Held in Bath England on 24-26 July 1989: Vacuum Microelectronics

DTIC Science & Technology

1989-07-26

resulting Laplacian matrix. This © 1989 lOP Publishing Ltd l • m m i m mIlia ItoI 110 Vacuum microelectronics 89 approach does not easily yield accurate...Schottky diodes p-InP-Ag A L Musatov, S L Filippov and VL Korotkikh 57-60 Stimulated cold-cathode emission from metal electrodes coated with Langmuir...quantum transport K L Jensen and FA Buot 141-144 Silicon cold cathodes based on PIN diodes P A M van der Heide, G G P van Gorkom, A M E Hoeberechts, A A

Comparative Advantages in Microelectronics,

DTIC Science & Technology

The initial point of departure for analyzing comparative advantages in microelectronics is to make certain explicit assumptions. First, technology...changes conditions but does not determine comparative advantages . Secondly, the entire industrial infrastructure is becoming increasingly abstract...that informatics will profoundly affect the productive infrastructure and the international division of labour.

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

Current status and future perspectives of electron interactions with molecules, clusters, surfaces, and interfaces [Workshop on Fundamental challenges in electron-driven chemistry; Workshop on Electron-driven processes: Scientific challenges and technological opportunities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Kurt H.; McCurdy, C. William; Orlando, Thomas M.

2000-09-01

This report is based largely on presentations and discussions at two workshops and contributions from workshop participants. The workshop on Fundamental Challenges in Electron-Driven Chemistry was held in Berkeley, October 9-10, 1998, and addressed questions regarding theory, computation, and simulation. The workshop on Electron-Driven Processes: Scientific Challenges and Technological Opportunities was held at Stevens Institute of Technology, March 16-17, 2000, and focused largely on experiments. Electron-molecule and electron-atom collisions initiate and drive almost all the relevant chemical processes associated with radiation chemistry, environmental chemistry, stability of waste repositories, plasma-enhanced chemical vapor deposition, plasma processing of materials for microelectronic devices andmore » other applications, and novel light sources for research purposes (e.g. excimer lamps in the extreme ultraviolet) and in everyday lighting applications. The life sciences are a rapidly advancing field where the important role of electron-driven processes is only now beginning to be recognized. Many of the applications of electron-initiated chemical processes require results in the near term. A large-scale, multidisciplinary and collaborative effort should be mounted to solve these problems in a timely way so that their solution will have the needed impact on the urgent questions of understanding the physico-chemical processes initiated and driven by electron interactions.« less

Co-polymerization of methyl methacrylate and styrene via surfactant-free emulsion polymerization, as a potential material for photonic crystal application

NASA Astrophysics Data System (ADS)

Kassim, Syara; Zahari, Siti Balqis; Tahrin, Rabiatul Addawiyah Azwa; Harun, Noor Aniza

2017-09-01

Photonic crystals are being the great interest of researcher to studies due to a variety of potential application for the interaction of light including the solar cells, optical sensors and paints. In order to evaluate the fabrication of photonic crystals thin film, a free-emulsifier emulsion copolymerization of styrene and methyl methacrylate was carried out. By using the self -assembly approach, this method offers the opportunity to produce crystalline polymer sphere in more ease operation, low cost and environmental friendly. The influences of the mixing ratio of monomer and amount of initiators were studied. In advance, the presence of styrene as co-monomer had improved the thermal degradation of polymer methyl methacrylate. While in changing the mixing ratio of styrene and methyl methacrylate resulted in particle size of the sphere. The size of polymer particles slightly increased on increasing volume of styrene monomer ratio. This occurred because the properties of styrene in water where it sparingly soluble and lead to coagulation of particles. This simple, yet effective method for preparing functional complex 3D structures has the potential to be used generically to fabricate a variety of functional porous 3D structures that could find application not only in new or improved photonic crystal (PC) devices but also in areas such as catalysis, solar cell, separation, fuel cells technology, microelectronics and optoelectronics.

Silicon carbide as a basis for spaceflight optical systems

NASA Astrophysics Data System (ADS)

Curcio, Michael E.

1994-09-01

New advances in the areas of microelectronics and micro-mechanical devices have created a momentum in the development of lightweight, miniaturized, electro-optical space subsystems. The performance improvements achieved and new observational techniques developed as a result, have provided a basis for a new range of Small Explorer, Discovery-class and other low-cost mission concepts for space exploration. However, the ultimate objective of low-mass, inexpensive space science missions will only be achieved with a companion development in the areas of flight optical systems and sensor instrument benches. Silicon carbide (SiC) is currently emerging as an attractive technology to fill this need. As a material basis for reflective, flight telescopes and optical benches, SiC offers: the lightweight and stiffness characteristics of beryllium; glass-like inherent stability consistent with performance to levels of diffraction-limited visible resolution; superior thermal properties down to cryogenic temperatures; and an existing, commercially-based material and processing infrastructure like aluminum. This paper will describe the current status and results of on-going technology developments to utilize these material properties in the creation of lightweight, high- performing, thermally robust, flight optical assemblies. System concepts to be discussed range from an 18 cm aperture, 4-mirror, off-axis system weighing less than 2 kg to a 0.5 m, 15 kg reimager. In addition, results in the development of a thermally-stable, `GOES-like' scan mirror will be presented.