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Sample records for advanced mos devices

  1. Consistent low-field mobility modeling for advanced MOS devices

    NASA Astrophysics Data System (ADS)

    Stanojević, Zlatan; Baumgartner, Oskar; Filipović, Lidija; Kosina, Hans; Karner, Markus; Kernstock, Christian; Prause, Philipp

    2015-10-01

    In this paper we develop several extensions to semi-classical modeling of low-field mobility, which are necessary to treat planar and non-planar channel geometries on equal footing. We advance the state-of-the-art by generalizing the Prange-Nee model for surface roughness scattering to non-planar geometries, providing a fully numerical treatment of Coulomb scattering, and formulating the Kubo-Greenwood mobility model in a consistent, dimension-independent manner. These extensions allow meaningful comparison of planar and non-planar structures alike, and open the door to evaluating emerging device concepts, such as the FinFET or the junction-less transistor, on physical grounds.

  2. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  3. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  4. Suspended MoS2 devices

    NASA Astrophysics Data System (ADS)

    Jin, Taiyu; Kang, Jinyoung; Liu, Renlong; Kim, Youngchan; Lee, Changgu

    2013-03-01

    Single or a few layer MoS2 sheets have been reported to have high electric mobility and current on/off ratio comparable to those of silicon due to its semiconductor properties with bandgap of 1.3 ~ 1.9eV. However, its extremely high surface to volume ratio and low thickness prohibits it from reproducing its electronic properties on SiO2 substrates possibly because of charge scattering by surface charges and phonons. In order to investigate these surface effects, we fabricated MoS2 devices suspended from the SiO2 and characterized their electronic transport properties. We exfoliated single or a few layer MoS2 on SiO2 substrates first, and fabricated field effect transistors using e-beam lithography. After that, we suspended MoS2 sheets by etching SiO2 with hydrofluoric acid. We measured mobility and current on/off ratio before and after the etching process. We found that mobility of MoS2 devices increased by factor of 5-10 after etching for all devices. However, on/off ratio did not show significant variation. Our measurements suggest that atomically thin MoS2 devices are significantly affected by substrate surface and environment.

  5. Speed enhancement of complementary MOS devices

    NASA Technical Reports Server (NTRS)

    Devlin, M.

    1972-01-01

    Speed required for Sisyphus experiment on Pioneer probe was attained at supply voltage well within component limitations by combining supply voltage higher than nominal with low reactance interconnections. Speed was found to be far in excess of typical. parameters suggested by manufacturers of MOS devices.

  6. Reducing Sodium Contamination in MOS Devices

    NASA Technical Reports Server (NTRS)

    Dehaye, R. F.; Feltner, W. R.

    1986-01-01

    Method of removing positive ions from oxides in metal-oxide-semiconductor (MOS) transistors and intergrated circuits ensure freedom from contamination by sodium and other mobile positive ions. Electric field applied during oxide growth to push mobile Na + ions to surface. After cooling from growth temperature, field turned off and Na + contaminated surface layer etched away. New method intended to suplement established methods of minimizing ion contamination, such as scrupulous cleanliness in processing, purging with hydrogen chloride to react with and remove contaminants, and growing extra-thick gate oxide, then etching it to remove large portion of contaminants concentrated near surface.

  7. Total Ionizing Dose Effects in MOS Oxides and Devices

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; McLean, F. B.

    2003-01-01

    The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

  8. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  9. Radiation effects in LDD MOS devices

    SciTech Connect

    Woodruff, R.L.; Adams, J.R.

    1987-12-01

    The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10/sup 6/ rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10/sup 6/ rads(Si), and shows promise for achieving 1.0 x 10/sup 7/ rad(Si) total-dose capability.

  10. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  11. Analytical models for total dose ionization effects in MOS devices.

    SciTech Connect

    Campbell, Phillip Montgomery; Bogdan, Carolyn W.

    2008-08-01

    MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO{sub 2} interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

  12. Thermal management in MoS2 based integrated device using near-field radiation

    NASA Astrophysics Data System (ADS)

    Peng, Jiebin; Zhang, Gang; Li, Baowen

    2015-09-01

    Recently, wafer-scale growth of monolayer MoS2 films with spatial homogeneity is realized on SiO2 substrate. Together with the latest reported high mobility, MoS2 based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS2, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS2 to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS2 and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS2 sheet. Therefore, an efficient thermal management strategy for MoS2 integrated device is proposed: Graphene sheet is brought into close proximity, 10-20 nm from MoS2 device; heat energy transfer from MoS2 to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

  13. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    PubMed

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-01

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed. PMID:26103511

  14. Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

    NASA Technical Reports Server (NTRS)

    Danchenko, V. (Inventor)

    1974-01-01

    A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

  15. Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

    NASA Technical Reports Server (NTRS)

    Stassinopoulos, E. G.; Brucker, G. J.; Van Gunten, O.; Knudson, A. R.; Jordan, T. M.

    1983-01-01

    This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

  16. MoS2 nanolayers grown on carbon nanotubes: an advanced reinforcement for epoxy composites.

    PubMed

    Zhou, Keqing; Liu, Jiajia; Shi, Yongqian; Jiang, Saihua; Wang, Dong; Hu, Yuan; Gui, Zhou

    2015-03-25

    In the present study, carbon nanotubes (CNTs) wrapped with MoS2 nanolayers (MoS2-CNTs) were facilely synthesized to obtain advanced hybrids. The structure of the MoS2-CNT hybrids was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy measurements. Subsequently, the MoS2-CNT hybrids were incorporated into EP for reducing fire hazards. Compared with pristine CNTs, MoS2-CNT hybrids showed good dispersion in EP matrix and no obvious aggregation of CNTs was observed. The obtained nanocomposites exhibited significant improvements in thermal properties, flame retardancy and mechanical properties, compared with those of neat EP and composites with a single CNT or MoS2. With the incorporation of 2.0 wt % of MoS2-CNT hybrids, the char residues and glass transition temperature (Tg) of the EP composite was significantly increased. Also, the addition of MoS2-CNT hybrids awarded excellent fire resistance to the EP matrix, which was evidenced by the significantly reduced peak heat release rate and total heat release. Moreover, the amount of organic volatiles from EP decomposition was obviously decreased, and the formation of toxic CO was effectively suppressed, implying the toxicity of the volatiles was reduced and smoke production was obviously suppressed. The dramatically reduced fire hazards were generally ascribed to the synergistic effect of MoS2 and CNTs, containing good dispersion of MoS2-CNT hybrids, catalytic char function of MoS2 nanolayers, and physical barrier effects of MoS2 nanolayers and CNT network structure. PMID:25742464

  17. Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

    PubMed Central

    Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall; Riazimehr, Sarah; Schäfer-Eberwein, Heiko; Bablich, Andreas; Pawar, Ravinder; Iannaccone, Giuseppe; Downing, Clive; Fiori, Gianluca; Lemme, Max C.; Duesberg, Georg S.

    2014-01-01

    We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. PMID:24975741

  18. Heterojunction hybrid devices from vapor phase grown MoS2.

    PubMed

    Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall; Riazimehr, Sarah; Schäfer-Eberwein, Heiko; Bablich, Andreas; Pawar, Ravinder; Iannaccone, Giuseppe; Downing, Clive; Fiori, Gianluca; Lemme, Max C; Duesberg, Georg S

    2014-01-01

    We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. PMID:24975741

  19. Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, S.; Overton, C.; Ardoin, I.

    2015-12-01

    The Ni/SiO2/n-type 4H SiC MOS devices have been fabricated for microelectronic device applications. The SiO2 layer employed in the MOS devices is grown by wet thermal oxidation process. The current-field characteristics of Ni/SiO2/n-type 4H SiC MOS devices are quiet interestingly studied by employing Fowler Nordheim (FN) conduction tunneling model, which is verified by theoretical simulation. It is learnt that the tunneling current through the barrier in the MOS devices promptly obeys the FN conduction tunneling mechanism. The simulation results show that the current in the MOS device increases and barrier height decreases with increasing temperature and internal electric field. Therefore, the correction factor for the barrier height of n-type 4H SiC/SiO2 MOS device due to the influence of both the temperature and internal electric field is employed. The barrier height observed by the experiments is apparently smaller than the simulated one of an ideal MOS device. However, after employing all the correction factors to the barrier height, the simulated current-field curves fairly coincide with the experimental results. The reason for obtaining smaller experimental barrier height for MOS devices is substantially explored with the support of current-field (J-F) analysis. On the other hand, this article comprehensively addresses the effects of quantum mechanical, interface trap density and thickness of 4H-SiC on the barrier height.

  20. Performance of an Advanced MOS System in the 1996-97 National Collegiate Weather Forecasting Contest.

    NASA Astrophysics Data System (ADS)

    Vislocky, Robert L.; Fritsch, J. Michael

    1997-12-01

    A prototype advanced model output statistics (MOS) forecast system that was entered in the 1996-97 National Collegiate Weather Forecast Contest is described and its performance compared to that of widely available objective guidance and to contest participants. The prototype system uses an optimal blend of aviation (AVN) and nested grid model (NGM) MOS forecasts, explicit output from the NGM and Eta guidance, and the latest surface weather observations from the forecast site. The forecasts are totally objective and can be generated quickly on a personal computer. Other "objective" forms of guidance tracked in the contest are 1) the consensus forecast (i.e., the average of the forecasts from all of the human participants), 2) the combination of NGM raw output (for precipitation forecasts) and NGM MOS guidance (for temperature forecasts), and 3) the combination of Eta Model raw output (for precipitation forecasts) and AVN MOS guidance (for temperature forecasts).Results show that the advanced MOS system finished in 20th place out of 737 original entrants, or better than approximately 97% of the human forecasters who entered the contest. Moreover, the advanced MOS system was slightly better than consensus (23d place). The fact that an objective forecast system finished ahead of consensus is a significant accomplishment since consensus is traditionally a very formidable "opponent" in forecast competitions. Equally significant is that the advanced MOS system was superior to the traditional guidance products available from the National Centers for Environmental Prediction (NCEP). Specifically, the combination of NGM raw output and NGM MOS guidance finished in 175th place, and the combination of Eta Model raw output and AVN MOS guidance finished in 266th place. The latter result is most intriguing since the proposed elimination of all NGM products would likely result in a serious degradation of objective products disseminated by NCEP, unless they are replaced with equal

  1. Deuterium-incorporated gate oxide of MOS devices fabricated by using deuterium ion implantation

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Sung; Lear, Kevin L.

    2012-04-01

    In the aspect of metal-oxide-semiconductor (MOS) device reliability, deuterium-incorporated gate oxide could be utilized to suppress the wear-out that is combined with oxide trap generation. An alternative deuterium process for the passivation of oxide traps or defects in the gate oxide of MOS devices has been suggested in this study. The deuterium ion is delivered to the location where the gate oxide resides by using an implantation process and subsequent N2 annealing process at the back-end of metallization process. A conventional MOS field-effect transistor (MOSFET) with a 3-nm-thick gate oxide and poly-to-ploy capacitor sandwiched with 20-nm-thick SiO2 were fabricated in order to demonstrate the deuterium effect in our process. An optimum condition of ion implantation was necessary to account for the topography of the overlaying layers in the device structure and to minimize the physical damage due to the energy of the implanted ion. Device parameter variations, the gate leakage current, and the dielectric breakdown phenomenon were investigated in the deuterium-ion-implanted devices. We found the isotope effect between hydrogen- and deuterium-implanted devices and an improved electrical reliability in the deuterated gate oxide. This implies that deuterium bonds are generated effectively at the Si/SiO2 interface and in the SiO2 bulk.

  2. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

    PubMed

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K; Das, Soumen; Ray, Samit K

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450-800 nm are found to be stable in the temperature range of 10-350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10(11) Jones, respectively at an applied bias of -2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  3. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

    PubMed Central

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K.; Das, Soumen; Ray, Samit K.

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  4. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  5. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  6. Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics

    NASA Astrophysics Data System (ADS)

    Hamadeh, Emad; Gunther, Norman G.; Niemann, Darrell; Rahman, Mahmud

    2006-06-01

    Random fluctuations in fabrication process outcomes such as gate line edge roughness (LER) give rise to corresponding fluctuations in scaled down MOS device characteristics. A thermodynamic-variational model is presented to study the effects of LER on threshold voltage and capacitance of sub-50 nm MOS devices. Conceptually, we treat the geometric definition of the MOS devices on a die as consisting of a collection of gates. In turn, each of these gates has an area, A, and a perimeter, P, defined by nominally straight lines subject to random process outcomes producing roughness. We treat roughness as being deviations from straightness consisting of both transverse amplitude and longitudinal wavelength each having lognormal distribution. We obtain closed-form expressions for variance of threshold voltage ( Vth), and device capacitance ( C) at Onset of Strong Inversion (OSI) for a small device. Using our variational model, we characterized the device electrical properties such as σ and σC in terms of the statistical parameters of the roughness amplitude and spatial frequency, i.e., inverse roughness wavelength. We then verified our model with numerical analysis of Vth roll-off for small devices and σ due to dopant fluctuation. Our model was also benchmarked against TCAD of σ as a function of LER. We then extended our analysis to predict variations in σ and σC versus average LER spatial frequency and amplitude, and oxide-thickness. Given the intuitive expectation that LER of very short wavelengths must also have small amplitude, we have investigated the case in which the amplitude mean is inversely related to the frequency mean. We compare with the situation in which amplitude and frequency mean are unrelated. Given also that the gate perimeter may consist of different LER signature for each side, we have extended our analysis to the case when the LER statistical difference between gate sides is moderate, as well as when it is significantly large.

  7. Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

    NASA Astrophysics Data System (ADS)

    Zuozhen, Fu; Huaxiang, Yin; Xiaolong, Ma; Shumin, Chai; Jianfeng, Gao; Dapeng, Chen

    2013-06-01

    The optimizations to metal gate structure and film process were extensively investigated for great metal-gate stress (MGS) in 20 nm high-k/metal-gate-last (HK/MG-last) nMOS devices. The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values (0 to -6 GPa) was implemented in the device simulation along with other traditional process-induced-strain (PIS) technologies like e-SiC and nitride capping layer. The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down. In addition, the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated. Also with a new method of fully stressed replacement metal gate (FSRMG) and using plane-shape-HfO to substitute U-shape-HfO, the effect of MGS was improved. For greater film stress in the metal gate, the process conditions for physical vapor deposition (PVD) TiNx were optimized. The maximum compressive stress of -6.5 GPa TiNx was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

  8. Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

    NASA Technical Reports Server (NTRS)

    Gourrier, S.; Mircea, A.; Simondet, F.

    1980-01-01

    The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

  9. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  10. Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

    NASA Astrophysics Data System (ADS)

    Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

    MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

  11. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

  12. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

    PubMed

    Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck; Arefe, Ghidewon; Huang, Pinshane Y; Lee, Chul-Ho; Chenet, Daniel A; Zhang, Xian; Wang, Lei; Ye, Fan; Pizzocchero, Filippo; Jessen, Bjarke S; Watanabe, Kenji; Taniguchi, Takashi; Muller, David A; Low, Tony; Kim, Philip; Hone, James

    2015-06-01

    Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include defects such as sulphur vacancies in the MoS2 itself as well as extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, we have developed here a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm(2) V(-1) s(-1) for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. We also observed Shubnikov-de Haas oscillations in high-mobility monolayer and few-layer MoS2. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2. PMID:25915194

  13. Concurrent high-frequency annealing of MOS devices in nuclear environments

    SciTech Connect

    Mandal, S.; Singh, R.K.; Tulenko, J.S.; Fox, R.M. )

    1993-01-01

    The effects of concurrent high-frequency alternating-current (ac) bias annealing of radiation-induced defects in metal-oxide semiconductor (MOS) capacitors has been investigated to evaluate whether this is an acceptable process to extend the lifetime of electronic devices exposed to radiation fields by mitigating the harmful effects of radiation on electronic components. When exposed to ionizing gamma radiation, complementary MOS (CMOS) circuits exhibit threshold voltage shifts, degradation in channel mobility, and excessive device leakage, which eventually lead to abrupt device failure. Although a lot of research work has been conducted on thermal effects of defect reduction, there have been very few reports on the use of dynamic ac bias to remove defects generated by gamma radiation. The most promising report in this area has been from Okabe et al., who have shown that postirradiation ac high-frequency annealing significantly reduces the radiation-induced interface traps. Until now, the effect of ac bias during gamma radiation (concurrent) has not been investigated. In this study, we have shown that concurrent (on-line) ac annealing bias can significantly reduce the rate of defect generation in radiation-soft devices. Under optimum conditions, more than a 100% increase in the time for failure for capacitors has been observed. These studies have been conducted as a part of the program to increase the lifetime of electronic components in robots used in nuclear environments. This work has been funded by the U.S. Department of Energy Offices of Nuclear Energy and Environmental Restoration and Waste Management.

  14. Electronic transport and device properties of monolayer CVD MoS2

    NASA Astrophysics Data System (ADS)

    Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien; Wang, Han; Farmer, Damon B.; Kong, Jing; Xia, Fengnian; Avouris, Phaedon

    2014-03-01

    The electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapor deposition (CVD) are studied in this work. We show that these devices have the potential to suppress short channel effects, be aggressively down-scaled and have high critical breakdown electric field. These properties make them a compelling alternative to organic and other thin film materials. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. These exponentially distributed states further limit the device's subthreshold slope to 200meV/dec, regardless of the temperature. Continual engineering efforts on improving the sample quality are needed for its potential applications in flexible electronics, high resolution displays, photo-detection and energy harvesting.

  15. Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.

    PubMed

    Zhang, Peng; Gao, Cunxu; Xu, Benhua; Qi, Lin; Jiang, Changjun; Gao, Meizhen; Xue, Desheng

    2016-04-01

    The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets. PMID:26938882

  16. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  17. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

    PubMed

    Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

    2014-04-18

    We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence. PMID:24642948

  18. Development and Evaluation of an Integrated Basic Combat/Advanced Individual Training Program for Medical Corpsmen (MOS 91A10).

    ERIC Educational Resources Information Center

    Ward, Joseph S.; And Others

    The Human Resources Research Organization undertook this study to determine experimentally the effect of integrating the Basic Combat Training (BCT) and the Advanced Individual Training (AIT) sequence of instruction for conscientious objector (CO) being trained as a Medical Corpsman (MOS 91A10). Other objectives were to develop an improved AIT…

  19. Towards intrinsic MoS2 devices for high performance arsenite sensing

    NASA Astrophysics Data System (ADS)

    Li, Peng; Zhang, Dongzhi; Sun, Yan'e.; Chang, Hongyan; Liu, Jingjing; Yin, Nailiang

    2016-08-01

    Molybdenum disulphide (MoS2) is one of the most attractive two dimensional materials other than graphene, and the exceptional properties make it a promising candidate for bio/chemical sensing. Nevertheless, intrinsic properties and sensing performances of MoS2 are easily masked by the presence of the Schottky barrier (SB) at source/drain electrodes, and its impact on MoS2 sensors remains unclear. Here, we systematically investigated the influence of the SB on MoS2 sensors, revealing the sensing mechanism of intrinsic MoS2. By utilizing a small work function metal, Ti, to reduce the SB, excellent electrical properties of this 2D material were yielded with 2-3 times enhanced sensitivity. We experimentally demonstrated that the sensitivity of MoS2 is superior to that of graphene. Intrinsic MoS2 was able to realize rapid detection of arsenite down to 0.1 ppb without the influence of large SB, which is two-fold lower than the World Health Organization (WHO) tolerance level and better than the detection limit of recently reported arsenite sensors. Additionally, accurately discriminating target molecules is a great challenge for sensors based on 2D materials. This work demonstrates MoS2 sensors encapsulated with ionophore film which only allows certain types of molecules to selectively permeate through it. As a result, multiplex ion detection with superb selectivity was realized. Our results show prominent advantages of intrinsic MoS2 as a sensing material.

  20. Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching

    NASA Astrophysics Data System (ADS)

    Ninomiya, Naruki; Mori, Takahiro; Uchida, Noriyuki; Watanabe, Eiichiro; Tsuya, Daiju; Moriyama, Satoshi; Tanaka, Masatoshi; Ando, Atsushi

    2015-04-01

    We investigated a device isolation process for MoS2-based devices and fabricated high-k/metal-gate MoS2 MOSFETs. An Ar-ion etching process was utilized for the device isolation process. It circumvents damage in the device channel, as confirmed by Raman spectroscopy. A top-gate MoS2 MOSFET was fabricated with a HfO2 thin film 16 nm thick as the gate insulator. Utilizing capacitance-voltage (C-V) measurements, the capacitance equivalent thickness (CET) was estimated to be 5.36 nm, which indicates that a gate stack with the sufficiently thin insulator was successfully realized. The device exhibited a mobility of 25.3 cm2/(V·s), a subthreshold swing (SS) of 86.0 mV/decade, and an ON/OFF ratio of 107. This satisfactory device performance demonstrates the feasibility of the proposed device isolation process.

  1. Impact of post metal annealing on gate work function engineering for advanced MOS applications

    NASA Astrophysics Data System (ADS)

    Kumar, S. Sachin; Prasad, Amitesh; Sinha, Amrita; Raut, Pratikhya; Das, Palash; Mahato, S. S.; Mallik, S.

    2016-05-01

    Ultra thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (Vfb) and hysteresis (ΔVfb) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impact of PMA on interface state density (Dit), border trap density (Nbt) and oxide trap density (Qf/q) of high-k gate stack were also examined for all the devices. The Nbt and frequency dispersion significantly reduces to ~2.77x1010 cm-2 and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x1012 eV-1cm-2 after PMA (350°C) in N2, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x1012 eV-1cm-2) after PMA.

  2. Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices

    NASA Astrophysics Data System (ADS)

    Wang, Bin

    The aggressive scaling of smaller/faster logic and memory devices demands accurate reliability characterization and knowledge of the failure mechanisms of ultra-thin (<30 A) silicon dioxide (SiO 2) layers in the gates of metal-oxide semiconductor (MOS) structures. The increased occurrence of soft breakdown in ultra-thin oxide films necessitates the development of more sophisticated techniques to detect breakdown. One such technique is by interrupting stress and monitoring stress-induced leakage current (SILC) or interface state density (Dit). The effect of interrupting stress was carefully studied and determined not to affect device lifetime. A comprehensive time-dependent dielectric breakdown (TDDB) study was conducted on ultra-thin oxide over a temperature ranging from 220°C to 350°C to study temperature acceleration. The results of the study showed that both hard and soft breakdown modes exhibit the same temperature dependence. The choice of a failure model for time/charge to breakdown (tBD /QBD) is critical for accurate reliability extrapolation. In this work, two more experiments were carried out to clarify the current physical mechanisms responsible to dielectric wear-out. The first experiment investigated the effects of pulsed biased stress on device lifetime. A lifetime enhancement under bipolar pulse stress was observed. The results suggest that previously proposed mechanism of hole de-trapping in thick oxide may not be responsible for the lifetime increase observed here for ultra-thin oxides. The second experiment studied the effects of heavy ion on the reliability of ultra-thin SiO2. Annealing and electron injection experiments on irradiated devices with heavy ion implied that holes were significantly created and trapped inside SiO2 without causing the SiO2 to breakdown. The results from these two studies suggest that breakdown of ultra-thin oxides is not caused by holes and that the anode hole injection (AHI) model for constant voltage stress (CVS) is

  3. Thermoelectric Devices Advance Thermal Management

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Thermoelectric (TE) devices heat, cool, and generate electricity when a temperature differential is provided between the two module faces. In cooperation with NASA, Chico, California-based United States Thermoelectric Consortium Inc. (USTC) built a gas emissions analyzer (GEA) for combustion research. The GEA precipitated hydrocarbon particles, preventing contamination that would hinder precise rocket fuel analysis. The USTC research and design team uses patent-pending dimple, pin-fin, microchannel and microjet structures to develop and design heat dissipation devices on the mini-scale level, which not only guarantee high performance of products, but also scale device size from 1 centimeter to 10 centimeters. USTC continues to integrate the benefits of TE devices in its current line of thermal management solutions and has found the accessibility of NASA technical research to be a valuable, sustainable resource that has continued to positively influence its product design and manufacturing

  4. Photoelectron spectroscopic imaging and device applications of large-area patternable single-layer MoS2 synthesized by chemical vapor deposition.

    PubMed

    Park, Woanseo; Baik, Jaeyoon; Kim, Tae-Young; Cho, Kyungjune; Hong, Woong-Ki; Shin, Hyun-Joon; Lee, Takhee

    2014-05-27

    Molybdenum disulfide (MoS2) films, which are only a single atomic layer thick, have been synthesized by chemical vapor deposition (CVD) and have gained significant attention due to their band-gap semiconducting properties. However, in order for them to be useful for the fabrication of practical devices, patterning processes that can be used to form specific MoS2 structures must be integrated with the existing synthetic approaches. Here, we report a method for the synthesis of centimeter-scale, high-quality single-layer MoS2 that can be directly patterned during CVD, so that postpatterning processes can be avoided and device fabrication can be streamlined. Utilizing X-ray photoelectron spectroscopic imaging, we characterize the chemical states of these CVD-synthesized single-layer MoS2 films and demonstrate that the triangular-shaped MoS2 are single-crystalline single-domain monolayers. We also demonstrate the use of these high-quality and directly patterned MoS2 films in electronic device applications by fabricating and characterizing field effect transistors. PMID:24730654

  5. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

    NASA Astrophysics Data System (ADS)

    Maity, Niladri Pratap; Maity, Reshmi; Thapa, R. K.; Baishya, Srimanta

    2016-07-01

    In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k dielectric material, HfO2 on the current density model have been carried out. In this work, improvement in the results is brought in by taking into account the barrier height lowering due to the image force effect. The considered voltage range is from 0 to ψ1/e i.e., 0 < V < ψ1/e, where ψ1 is the barrier height at the interface of metal and the oxide. Initially we are neglecting the image force effect for a MOS device consisting asymmetric barrier. Later, image force effect of ultra thin oxide layer has been introduced for practical potential barrier by superimposing the potential barrier on the trapezoidal barrier. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS and published experimental results. Excellent agreements among the three are observed.

  6. Nitrogen-Doped Carbon Embedded MoS2 Microspheres as Advanced Anodes for Lithium- and Sodium-Ion Batteries.

    PubMed

    Xie, Dong; Xia, Xinhui; Wang, Yadong; Wang, Donghuang; Zhong, Yu; Tang, Wangjia; Wang, Xiuli; Tu, Jiangping

    2016-08-01

    Rational design and synthesis of advanced anode materials are extremely important for high-performance lithium-ion and sodium-ion batteries. Herein, a simple one-step hydrothermal method is developed for fabrication of N-C@MoS2 microspheres with the help of polyurethane as carbon and nitrogen sources. The MoS2 microspheres are composed of MoS2 nanoflakes, which are wrapped by an N-doped carbon layer. Owing to its unique structural features, the N-C@MoS2 microspheres exhibit greatly enhanced lithium- and sodium-storage performances including a high specific capacity, high rate capability, and excellent capacity retention. Additionally, the developed polyurethane-assisted hydrothermal method could be useful for the construction of many other high-capacity metal oxide/sulfide composite electrode materials for energy storage. PMID:27355199

  7. A low power cryogenic 512 × 512-pixel infrared readout integrated circuit with modified MOS device model

    NASA Astrophysics Data System (ADS)

    Zhao, Hongliang; Liu, Xinghui; Xu, Chao

    2013-11-01

    A low power cryogenic readout integrated circuit (ROIC) for 512 × 512-pixel infrared focal plane array (IRFPA) image system, is presented. In order to improve the precision of the circuit simulation at cryogenic temperatures, a modified MOS device model is proposed. The model is based on BSIM3 model, and uses correction parameters to describe carrier freeze-out effect at low temperatures to improve the fitting accuracy for low temperature MOS device simulation. A capacitive trans-impedance amplifier (CTIA) with inherent correlated double sampling (CDS) configuration is employed to realize a high performance readout interfacing circuit in a pixel area of 30 × 30 μm2. Optimized column readout timing and structure are applied to reduce the power consumption. The experimental chip fabricated by a standard 0.35 μm 2P4M CMOS process shows more than 10 MHz readout rate with less than 70 mW power consumption under 3.3 V supply voltage at 77-150 K operated temperatures. And it occupies an area of 18 × 17 mm2.

  8. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  9. Analysis of the influence of MOS device geometry on predicted SEU cross sections

    SciTech Connect

    Warren, K.; Massengill, L.; Schrimpf, R.; Barnaby, H.

    1999-12-01

    An investigation into the single-event sensitive area geometry of a body-tied-to-source (BTS) SOI nMOS transistor has been performed through a novel simulation technique. Results are presented which demonstrate the influence of spatial variations in charge collection efficiency on the shape of the predicted upset cross section curve. Observations are made on a technique for inferring sensitive area or intra-cell collection efficiencies from cross section data.

  10. Charge trapping properties of alternative high-kappa dielectrics in MOS devices

    NASA Astrophysics Data System (ADS)

    Zhou, Xing

    High-kappa dielectrics are promising candidates to replace SiO 2 in advanced integrated circuits in future space systems. Studies of the effects of ionizing radiation and bias-temperature stress (BTS) on high-kappa dielectrics were performed. Trapped charge densities are evaluated as functions of temperature and stress time. Prior radiation exposure enhances BTS-induced degradation in these devices. Worst-case responses in combined effects are positive (or zero) bias irradiation followed by NBTS for HfO2-based devices. Degradation due to oxide or interface trap-charge changes in magnitude with the bias polarity during switched-bias annealing either after irradiation or constant voltage stress (CVS). This demonstrates that metastable electron trapping (dominant during post-rad annealing) and hydrogen transport and reactions (dominant during post-CVS annealing) in the near-interfacial dielectric layers play significant roles in the defect formation process. Additional defect growth with time was observed as a result of additional charge injection through the gate stacks during the annealing process. These results provide insights into fundamental trapping properties of high-kappa dielectrics and can be used to help predict long-term reliability of these devices.

  11. Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes.

    PubMed

    Leong, Wei Sun; Luo, Xin; Li, Yida; Khoo, Khoong Hong; Quek, Su Ying; Thong, John T L

    2015-01-27

    We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 Ω · μm. The substantial contact enhancement (∼ 2 orders of magnitude), as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way toward achieving high performance next-generation transistors. PMID:25517793

  12. Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

    NASA Technical Reports Server (NTRS)

    Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

    1983-01-01

    This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

  13. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Baykan, Mehmet Onur

    Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width

  14. Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, Somnath; Overton, Charles; Ardoin, Ira; Gordon, B. J.; Johnstone, D.; Roy, D.; Barone, D.

    2015-03-01

    The SiO2 layers have been grown onto C-face and Si-face 4H-SiC substrates by two different techniques such as wet thermal oxidize process and sputtering. The deposition recipes of these techniques are carefully optimized by trails and error method. The growth effects of SiO2 on the C-face and Si-face 4H-SiC substrates are thoroughly investigated by AFM analysis. The growth mechanism of different species involved in the growth process of SiO2 by wet thermal oxide is now proposed by adopting two body classical projectile scattering. This mechanism drives to determine growth of secondary phases such as α-CH nano-islands in the grown SiO2 layer. The effect of HF etchings on the SiO2 layers grown by both techniques and on both the C-face and Si-face substrates are legitimately studied. The thicknesses of the layers determined by AFM and ellipsometry techniques are widely promulgated. The MOS capacitors are made on the Si-face 4H-SiC wafers by wet oxidation and sputtering processes, which are studied by capacitance versus voltage (CV) technique. From CV measurements, the density of trap states with variation of trap level for MOS devices is estimated.

  15. Advanced Electro-Optic Surety Devices

    SciTech Connect

    Watterson, C.E.

    1997-05-01

    The Advanced Electro-Optic Surety Devices project was initiated in march 1991 to support design laboratory guidance on electro-optic device packaging and evaluation. Sandia National Laboratory requested AlliedSignal Inc., Kansas City Division (KCD), to prepare for future packaging efforts in electro-optic integrated circuits. Los Alamos National Laboratory requested the evaluation of electro-optic waveguide devices for nuclear surety applications. New packaging techniques involving multiple fiber optic alignment and attachment, binary lens array development, silicon V-groove etching, and flip chip bonding were requested. Hermetic sealing of the electro-optic hybrid and submicron alignment of optical components present new challenges to be resolved. A 10-channel electro-optic modulator and laser amplifier were evaluated for potential surety applications.

  16. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

    NASA Astrophysics Data System (ADS)

    Preciado, Edwin; Schülein, Florian J. R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I.-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

    2015-10-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.

  17. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

    PubMed Central

    Preciado, Edwin; Schülein, Florian J.R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

    2015-01-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

  18. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3.

    PubMed

    Preciado, Edwin; Schülein, Florian J R; Nguyen, Ariana E; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J

    2015-01-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

  19. Compact modeling of total ionizing dose and aging effects in MOS technologies

    DOE PAGESBeta

    Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

    2015-06-18

    This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimentalmore » I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.« less

  20. Compact modeling of total ionizing dose and aging effects in MOS technologies

    SciTech Connect

    Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

    2015-06-18

    This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

  1. Hysteresis in single-layer MoS2 field effect transistors.

    PubMed

    Late, Dattatray J; Liu, Bin; Matte, H S S Ramakrishna; Dravid, Vinayak P; Rao, C N R

    2012-06-26

    Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS(2) field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS(2). Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude. PMID:22577885

  2. Advanced Devices for Cryogenic Thermal Management

    NASA Astrophysics Data System (ADS)

    Bugby, D.; Stouffer, C.; Garzon, J.; Beres, M.; Gilchrist, A.

    2006-04-01

    This paper describes six advanced cryogenic thermal management devices/subsystems developed by Swales Aerospace for ground/space-based applications of interest to NASA, DoD, and the commercial sector. The devices/subsystems described herein include the following: (a) a differential thermal expansion cryogenic thermal switch (DTE-CTSW) constructed with high purity aluminum end-pieces and an Ultem support rod for the 6 K Mid-Infrared Instrument (MIRI) on the James Webb Space Telescope (JWST) (b) a quad-redundant DTE-CTSW assembly for the 35 K science instruments (NIRCam, NIRSpec, and FGS) mounted on the JWST Integrated Science Instrument Module (ISIM) (c) a cryogenic diode heat pipe (CDHP) thermal switching system using methane as the working fluid for the 100 K CRISM hyperspectral mapping instrument on the Mars Reconnaissance Orbiter (MRO) and (d) three additional devices/subsystems developed during the AFRL-sponsored CRYOTOOL program, which include a dual DTE-CTSW/dual cryocooler test bed, a miniaturized neon cryogenic loop heat pipe (mini-CLHP), and an across gimbal cryogenic thermal transport system (GCTTS). For the first three devices/subsystems mentioned above, this paper describes key aspects of the development efforts including concept definition, design, fabrication, and testing. For the latter three, this paper provides brief overview descriptions as key details are provided in a related paper.

  3. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  4. Observation of radiation induced changes in stress and electrical properties in MOS devices

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Lowry, L.; Macwilliams, K. P.; Barnes, C. E.

    1992-01-01

    Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

  5. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  6. Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Wen; Lou, Jen-Chung; Yeh, Ching-Fa; Hsieh, Chih-Ming; Lin, Shiuan-Jeng; Kusumi, Toshio

    2004-05-01

    Airborne molecular contamination (AMC) is becoming increasingly important as devices are scaled down to the nanometer generation. Optimum ultra low penetration air (ULPA) filter technology can eliminate AMC. In a cleanroom, however, the acid vapor generated from the cleaning process may degrade the ULPA filter, releasing AMC to the air and the surface of wafers, degrading the electrical characteristics of devices. This work proposes the new PTFE ULPA filter, which is resistant to acid vapor corrosion, to solve this problem. Experimental results demonstrate that the PTFE ULPA filter can effectively eliminate the AMC and provide a very clean cleanroom environment.

  7. Metal microstructures in advanced CMOS devices

    SciTech Connect

    Gignac, L.M.; Rodbell, K.P.

    1996-12-31

    As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal film. With film thickness decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surface and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

  8. Study of the use of Metal-Oxide-Silicon (MOS) devices for particulate detection and monitoring in the earth's atmosphere

    NASA Technical Reports Server (NTRS)

    Brooks, A. D.; Monteith, L. K.; Wortman, J. J.; Mulligan, J. C.

    1974-01-01

    A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.

  9. Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices

    NASA Astrophysics Data System (ADS)

    Park, Juhong; Choudhary, Nitin; Smith, Jesse; Lee, Gilsik; Kim, Moonkyung; Choi, Wonbong

    2015-01-01

    Two-dimensional (2D) materials have been a great interest as high-performance transparent and flexible electronics due to their high crystallinity in atomic thickness and their potential for variety applications in electronics and optoelectronics. The present study explored the wafer scale production of MoS2 nanosheets with layer thickness modulation from single to multi-layer by using two-step method of metal deposition and CVD process. The formation of high-quality and layer thickness-modulated MoS2 film was confirmed by Raman spectroscopy, AFM, HRTEM, and photoluminescence analysis. The layer thickness was identified by employing a simple method of optical contrast value. The image contrast in green (G) channel shows the best fit as contrast increases with layer thickness, which can be utilized in identifying the layer thickness of MoS2. The presence of critical thickness of Mo for complete sulphurization, which is due to the diffusion limit of MoS2 transformation, changes the linearity of structural, electrical, and optical properties of MoS2. High optical transparency of >90%, electrical mobility of ˜12.24 cm2 V-1 s-1, and Ion/off of ˜106 characterized within the critical thickness make the MoS2 film suitable for transparent and flexible electronics as compared to conventional amorphous silicon (a-Si) or organic films. The layer thickness modulated large scale MoS2 growth method in conjunction with the layer thickness identification by the nondestructive optical contrast will definitely trigger development of scalable 2D MoS2 films for transparent and flexible electronics.

  10. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal–oxide–semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm‑2 · eV‑1) and gate leakage current (9.32 × 10‑5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  11. Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices

    NASA Astrophysics Data System (ADS)

    Jeon, Jongwook; Kang, Myounggon

    2016-05-01

    In this work, we investigated the noise source and noise parameters of a quasi-ballistic MOSFET at the high-frequency regime. We presented the shot noise properties in the measured drain current noise and its impact on the induced gate noise and the noise parameters of 10-nm-scale n-/p-type MOS (N/PMOS) devices for the first time. The measured noise sources and noise parameters were carefully analyzed with the shot and thermal noise models in all operation regions. On the basis of the results, new noise parameter models are proposed and the noise performance improvement in the quasi-ballistic regime is shown.

  12. Diversionary device history and revolutionary advancements.

    SciTech Connect

    Cooper, Paul W.; Grubelich, Mark Charles

    2005-04-01

    Diversionary devices also known as flash bangs or stun grenades were first employed about three decades ago. These devices produce a loud bang accompanied by a brilliant flash of light and are employed to temporarily distract or disorient an adversary by overwhelming their visual and auditory senses in order to gain a tactical advantage. Early devices that where employed had numerous shortcomings. Over time, many of these deficiencies were identified and corrected. This evolutionary process led to today's modern diversionary devices. These present-day conventional diversionary devices have undergone evolutionary changes but operate in the same manner as their predecessors. In order to produce the loud bang and brilliant flash of light, a flash powder mixture, usually a combination of potassium perchlorate and aluminum powder is ignited to produce an explosion. In essence these diversionary devices are small pyrotechnic bombs that produce a high point-source pressure in order to achieve the desired far-field effect. This high point-source pressure can make these devices a hazard to the operator, adversaries and hostages even though they are intended for 'less than lethal' roles. A revolutionary diversionary device has been developed that eliminates this high point-source pressure problem and eliminates the need for the hazardous pyrotechnic flash powder composition. This new diversionary device employs a fuel charge that is expelled and ignited in the atmosphere. This process is similar to a fuel air or thermobaric explosion, except that it is a deflagration, not a detonation, thereby reducing the overpressure hazard. This technology reduces the hazard associated with diversionary devices to all involved with their manufacture, transport and use. An overview of the history of diversionary device development and developments at Sandia National Laboratories will be presented.

  13. ARED (Advanced-Resistive Exercise Device) Update

    NASA Technical Reports Server (NTRS)

    Ploutz-Snyder, Lori

    2009-01-01

    This viewgraph presentation describes ARED which is a new hardware exercise device for use on the International Space Station. Astronaut physiological adaptations, muscle parameters, and cardiovascular parameters are also reviewed.

  14. An advanced space rotary power transfer device

    NASA Astrophysics Data System (ADS)

    Jacobson, P. E.

    A new electrical signal and rotary power transfer device has recently evolved from ball-bearing and electrical-transfer technologies. This hybrid device, known as a roll ring, has been tested extensively since the late 1970s and has demonstrated important operational advantages in a wide variety of signal and power transfer configurations. A high power version has been developed and evaluated. This paper describes this latter roll ring configuration. The paper also summarizes test results.

  15. Microfluidic Devices in Advanced Caenorhabditis elegans Research.

    PubMed

    Muthaiyan Shanmugam, Muniesh; Subhra Santra, Tuhin

    2016-01-01

    The study of model organisms is very important in view of their potential for application to human therapeutic uses. One such model organism is the nematode worm, Caenorhabditis elegans. As a nematode, C. elegans have ~65% similarity with human disease genes and, therefore, studies on C. elegans can be translated to human, as well as, C. elegans can be used in the study of different types of parasitic worms that infect other living organisms. In the past decade, many efforts have been undertaken to establish interdisciplinary research collaborations between biologists, physicists and engineers in order to develop microfluidic devices to study the biology of C. elegans. Microfluidic devices with the power to manipulate and detect bio-samples, regents or biomolecules in micro-scale environments can well fulfill the requirement to handle worms under proper laboratory conditions, thereby significantly increasing research productivity and knowledge. The recent development of different kinds of microfluidic devices with ultra-high throughput platforms has enabled researchers to carry out worm population studies. Microfluidic devices primarily comprises of chambers, channels and valves, wherein worms can be cultured, immobilized, imaged, etc. Microfluidic devices have been adapted to study various worm behaviors, including that deepen our understanding of neuromuscular connectivity and functions. This review will provide a clear account of the vital involvement of microfluidic devices in worm biology. PMID:27490525

  16. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  17. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  18. Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

    NASA Astrophysics Data System (ADS)

    Akin, Seçkİn; Sönmezoğlu, Savaş

    2015-09-01

    The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. The structural properties of the Cu:TiO2 nanoparticles have been obtained by means of X-ray diffraction (XRD), UV-Vis-NIR spectrometry, atomic force microscopy, and scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With the incorporation of Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed by XRD analysis. To understand the nature of this structure, the electronic parameters controlling the device performance were calculated using current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The ideality factor ( n) was 1.21 for the Al/Cu:TiO2/ p-Si MOS device, while the barrier height ϕ b was 0.75 eV with semi-log I- V characteristics. This is in good agreement with 0.78 eV measured by the Norde model. Possible reasons for the deviation of the ideality factor from unity have been addressed. From the C- V measurements, the values of diffusion potential, barrier height, and carrier concentration were extracted as 0.67, 0.98 eV, and 8.73 × 1013 cm-3, respectively. Our results encourage further work to develop process steps that would allow the Cu-doped TiO2 film/Si interface to play a major role in microelectronic applications.

  19. Advanced colour processing for mobile devices

    NASA Astrophysics Data System (ADS)

    Gillich, Eugen; Dörksen, Helene; Lohweg, Volker

    2015-02-01

    Mobile devices such as smartphones are going to play an important role in professionally image processing tasks. However, mobile systems were not designed for such applications, especially in terms of image processing requirements like stability and robustness. One major drawback is the automatic white balance, which comes with the devices. It is necessary for many applications, but of no use when applied to shiny surfaces. Such an issue appears when image acquisition takes place in differently coloured illuminations caused by different environments. This results in inhomogeneous appearances of the same subject. In our paper we show a new approach for handling the complex task of generating a low-noise and sharp image without spatial filtering. Our method is based on the fact that we analyze the spectral and saturation distribution of the channels. Furthermore, the RGB space is transformed into a more convenient space, a particular HSI space. We generate the greyscale image by a control procedure that takes into account the colour channels. This leads in an adaptive colour mixing model with reduced noise. The results of the optimized images are used to show how, e. g., image classification benefits from our colour adaptation approach.

  20. Few-layer MoS2: a promising layered semiconductor.

    PubMed

    Ganatra, Rudren; Zhang, Qing

    2014-05-27

    Due to the recent expanding interest in two-dimensional layered materials, molybdenum disulfide (MoS2) has been receiving much research attention. Having an ultrathin layered structure and an appreciable direct band gap of 1.9 eV in the monolayer regime, few-layer MoS2 has good potential applications in nanoelectronics, optoelectronics, and flexible devices. In addition, the capability of controlling spin and valley degrees of freedom makes it a promising material for spintronic and valleytronic devices. In this review, we attempt to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS2. Recent developments and advances in studying the material are highlighted. PMID:24660756

  1. Advances in modeling and simulation of vacuum electronic devices

    SciTech Connect

    Antonsen, T.M. Jr.; Mondelli, A.A.; Levush, B.; Verboncoeur, J.P.; Birdsall, C.K.

    1999-05-01

    Recent advances in the modeling and simulation of vacuum electronic devices are reviewed. Design of these devices makes use of a variety of physical models and numerical code types. Progress in the development of these models and codes is outlined and illustrated with specific examples. The state of the art in device simulation is evolving to the point such that devices can be designed on the computer, thereby eliminating many trial and error fabrication and test steps. The role of numerical simulation in the design process can be expected to grow further in the future.

  2. Silicon high speed modulator for advanced modulation: device structures and exemplary modulator performance

    NASA Astrophysics Data System (ADS)

    Milivojevic, Biljana; Wiese, Stefan; Whiteaway, James; Raabe, Christian; Shastri, Anujit; Webster, Mark; Metz, Peter; Sunder, Sanjay; Chattin, Bill; Anderson, Sean P.; Dama, Bipin; Shastri, Kal

    2014-03-01

    Fiber optics is well established today due to the high capacity and speed, unrivaled flexibility and quality of service. However, state of the art optical elements and components are hardly scalable in terms of cost and size required to achieve competitive port density and cost per bit. Next-generation high-speed coherent optical communication systems targeting a data rate of 100-Gb/s and beyond goes along with innovations in component and subsystem areas. Consequently, by leveraging the advanced silicon micro and nano-fabrication technologies, significant progress in developing CMOS platform-based silicon photonic devices has been made all over the world. These achievements include the demonstration of high-speed IQ modulators, which are important building blocks in coherent optical communication systems. In this paper, we demonstrate silicon photonic QPSK modulator based on a metal-oxide-semiconductor (MOS) capacitor structure, address different modulator configuration structures and report our progress and research associated with highspeed advanced optical modulation in silicon photonics

  3. Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica.

    PubMed

    Wan, Yi; Zhang, Hui; Zhang, Kun; Wang, Yilun; Sheng, Bowen; Wang, Xinqiang; Dai, Lun

    2016-07-20

    Monolayer MoS2, with fascinating mechanical, electrical, and optical properties, has generated enormous scientific curiosity and industrial interest. Controllable and scalable synthesis of monolayer MoS2 on various desired substrates has significant meaning in both basic scientific research and device application. Recent years have witnessed many advances in the direct synthesis of single-crystalline MoS2 flakes or their polycrystalline aggregates on numerous diverse substrates, such as SiO2-Si, mica, sapphire, h-BN, and SrTiO3, etc. In this work, we used the dual-temperature-zone atmospheric-pressure chemical vapor deposition method to directly synthesize large-scale monolayer MoS2 on fused silica, the most ordinary transparent insulating material in daily life. We systematically investigated the photoluminescence (PL) properties of monolayer MoS2 on fused silica and SiO2-Si substrates, which have different thermal conductivity coefficients and thermal expansion coefficients. We found that there exists a stronger strain on monolayer MoS2 grown on fused silica, and the strain becomes more obvious as temperature decreases. Moreover, the monolayer MoS2 grown on fused silica exhibits the unique trait of a fractal shape with tortuous edges and has stronger adsorbability. The monolayer MoS2 grown on fused silica may find application in sensing, energy storage, and transparent optoelectronics, etc. PMID:27338112

  4. Direct growth of single- and few-layer MoS2 on h-BN by CVD method

    NASA Astrophysics Data System (ADS)

    Yan, Aiming; Velasco, Jairo, Jr.; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Crommie, Michael; Zettl, Alex

    As a promising candidate for the next-generation electronics, large-scale single- and few-layer molybdenum disulfide (MoS2) grown by CVD method is an important advancement towards technological implementation of this material. However, the choice of substrate can significantly affect the performance of MoS2 based devices. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method. The growth mechanisms for single- and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. In addition, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents a viable path towards high-quality MoS2 based field effect transistors in a controllable and scalable fashion. Acknowledgement: the U.S. Department of Energy under Contract DE-AC02-05CH11231; NSF Grant DMR-1206512.

  5. Microscopy imaging device with advanced imaging properties

    SciTech Connect

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2015-11-24

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  6. Advanced devices and systems for radiation measurements

    SciTech Connect

    Knoll, G.F.; Wehe, D.K.; He, Z.; Barrett, C.; Miyamoto, J.

    1996-06-01

    The authors` most recent work continues their long-standing efforts to develop semiconductor detectors based on the collection of only a single type of charge carrier. Their best results are an extension of the principle of coplanar electrodes first described by Paul Luke of Lawrence Berkeley Laboratory 18 months ago. This technique, described in past progress reports, has the effect of deriving an output signal from detectors that depends only on the motion of carriers close to one surface. Since nearly all of these carriers are of one type (electrons) that are attracted to that electrode, the net effect is to nearly eliminate the influence of hole motion on the properties of the output signal. The result is that the much better mobility of electrons in compound semiconductors materials such as CZT can now be exploited without the concurrent penalty of poor hole collection. They have also developed new techniques in conjunction with the coplanar electrode principle that extends the technique into a new dimension. By proper processing of signals from the opposite electrode (the cathode) from the coplanar surface, they are able to derive a signal that is a good indication of the depth of interaction at which the charge carriers were initially formed. They have been the first group to demonstrate this technique, and examples of separate pulse height spectra recorded at a variety of different depths of interaction are shown in several of the figures that follow. Obtaining depth information is one step in the direction of obtaining volumetric point-of-interaction information from the detector. If one could known the coordinates of each specific interaction, then corrections could be applied to account for the inhomogeneities that currently plague many room-temperature devices.

  7. Advanced Stress, Strain And Geometrical Analysis In Semiconductor Devices

    SciTech Connect

    Neels, Antonia; Dommann, Alex; Niedermann, Philippe; Farub, Claudiu; Kaenel, Hans von

    2010-11-24

    High stresses and defect densities increases the risk of semiconductor device failure. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. Related to the dramatically smaller volume of semiconductor devices and new bonding techniques on such devices, new methods in testing and qualification are needed. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. In this paper, the applications of advanced High Resolution X-ray Diffraction (HRXRD) methods in strain, defect and deformation analysis on semiconductor devices are discussed. HRXRD with Rocking Curves (RC's) and Reciprocal Space Maps (RSM's) is used as accurate, non-destructive experimental method to evaluate the crystalline quality, and more precisely for the given samples, the in-situ strain, defects and geometrical parameters such as tilt and bending of device. The combination with advanced FEM simulations gives the possibility to support efficiently semiconductor devices design.

  8. Future Opportunities for Advancing Glucose Test Device Electronics

    PubMed Central

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-01-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano “ink” composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, “ink,” and continuous processing development presents the opportunity for research collaboration with medical device designers. PMID:22027300

  9. SEMICONDUCTOR DEVICES Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

    NASA Astrophysics Data System (ADS)

    Hailiang, Zhou; Yue, Hao; Minxuan, Zhang

    2010-12-01

    Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.

  10. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms. PMID:25639492

  11. Advances in device and formulation technologies for pulmonary drug delivery.

    PubMed

    Chan, John Gar Yan; Wong, Jennifer; Zhou, Qi Tony; Leung, Sharon Shui Yee; Chan, Hak-Kim

    2014-08-01

    Inhaled pharmaceuticals are formulated and delivered differently according to the therapeutic indication. However, specific device-formulation coupling is often fickle, and new medications or indications also demand new strategies. The discontinuation of chlorofluorocarbon propellants has seen replacement of older metered dose inhalers with dry powder inhaler formulations. High-dose dry powder inhalers are increasingly seen as an alternative dosage form for nebulised medications. In other cases, new medications have completely bypassed conventional inhalers and been formulated for use with unique inhalers such as the Staccato® device. Among these different devices, integration of software and electronic assistance has become a shared trend. This review covers recent device and formulation advances that are forming the current landscape of inhaled therapeutics. PMID:24728868

  12. Advanced photon source experience with vacuum chambers for insertion devices

    SciTech Connect

    Hartog, P.D.; Grimmer, J.; Xu, S.; Trakhtenberg, E.; Wiemerslage, G.

    1997-08-01

    During the last five years, a new approach to the design and fabrication of extruded aluminum vacuum chambers for insertion devices was developed at the Advanced Photon Source (APS). With this approach, three different versions of the vacuum chamber, with vertical apertures of 12 mm, 8 mm, and 5 mm, were manufactured and tested. Twenty chambers were installed into the APS vacuum system. All have operated with beam, and 16 have been coupled with insertion devices. Two different vacuum chambers with vertical apertures of 16 mm and 11 mm were developed for the BESSY-II storage ring and 3 of 16 mm chambers were manufactured.

  13. Advanced Sensor Fish Device for ImprovedTurbine Design

    SciTech Connect

    Carlson, Thomas J.

    2009-09-14

    Juvenile salmon (smolts) passing through hydroelectric turbines are subjected to environmental conditions that can potentially kill or injure them. Many turbines are reaching the end of their operational life expectancies and will be replaced with new turbines that incorporate advanced “fish friendly” designs devised to prevent injury and death to fish. To design a fish friendly turbine, it is first necessary to define the current conditions fish encounter. One such device used by biologists at Pacific Northwest National Laboratory was the sensor fish device to collect data that measures the forces fish experience during passage through hydroelectric projects.

  14. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.

    PubMed

    Chang, Hsiao-Yu; Yogeesh, Maruthi Nagavalli; Ghosh, Rudresh; Rai, Amritesh; Sanne, Atresh; Yang, Shixuan; Lu, Nanshu; Banerjee, Sanjay Kumar; Akinwande, Deji

    2016-03-01

    Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10 000 bending cycles. PMID:26707841

  15. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted. PMID:26403162

  16. Insertion devices for the Advanced Light Source at LBL

    SciTech Connect

    Hassenzahl, W.; Chin, J.; Halbach, K.; Hoyer, E.; Humphries, D.; Kincaid, B.; Savoy, R.

    1989-03-01

    The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory will be the first of the new generation of dedicated synchrotron light sources to be put into operation. Specially designed insertion devices will be required to realize the high brightness photon beams made possible by the low emittance of the electron beam. The complement of insertion devices on the ALS will include undulators with periods as short as 3.9 cm and one or more high field wigglers. The first device to be designed is a 5 m long, 5 cm period, hybrid undulator. The goal of very high brightness and high harmonic output imposes unusually tight tolerances on the magnetic field quality and thus on the mechanical structure. The design process, using a generic structure for all undulators, is described. 5 refs., 4 figs., 1 tab.

  17. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  18. Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

    SciTech Connect

    Lee, Albert Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov; Kim, Hoon; Choi, Kisik; Besser, Paul

    2014-01-15

    As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

  19. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  20. Advanced Measurement Devices for the Microgravity Electromagnetic Levitation Facility EML

    NASA Technical Reports Server (NTRS)

    Brillo, Jurgen; Fritze, Holger; Lohofer, Georg; Schulz, Michal; Stenzel, Christian

    2012-01-01

    This paper reports on two advanced measurement devices for the microgravity electromagnetic levitation facility (EML), which is currently under construction for the use onboard the "International Space Station (ISS)": the "Sample Coupling Electronics (SCE)" and the "Oxygen Sensing and Control Unit (OSC)". The SCE measures by a contactless, inductive method the electrical resistivity and the diameter of a spherical levitated metallic droplet by evaluating the voltage and electrical current applied to the levitation coil. The necessity of the OSC comes from the insight that properties like surface tension or, eventually, viscosity cannot seriously be determined by the oscillating drop method in the EML facility without knowing the conditions of the surrounding atmosphere. In the following both measurement devices are explained and laboratory test results are presented.

  1. The Advanced Space Plant Culture Device with Live Imaging Technique

    NASA Astrophysics Data System (ADS)

    Zheng, Weibo; Zhang, Tao; Tong, Guanghui

    The live imaging techniques, including the color and fluorescent imags, are very important and useful for space life science. The advanced space plant culture Device (ASPCD) with live imaging Technique, developed for Chinese Spacecraft, would be introduced in this paper. The ASPCD had two plant experimental chambers. Three cameras (two color cameras and one fluorescent camera) were installed in the two chambers. The fluorescent camera could observe flowering genes, which were labeled by GFP. The lighting, nutrient, temperature controling and water recycling were all independent in each chamber. The ASPCD would beed applied to investigate for the growth and development of the high plant under microgravity conditions on board the Chinese Spacecraft.

  2. One-step fabrication of large-area ultrathin MoS2 nanofilms with high catalytic activity for photovoltaic devices.

    PubMed

    Liang, Jia; Li, Jia; Zhu, Hongfei; Han, Yuxiang; Wang, Yanrong; Wang, Caixing; Jin, Zhong; Zhang, Gengmin; Liu, Jie

    2016-09-21

    Here we report a facile one-step solution-phase process to directly grow ultrathin MoS2 nanofilms on a transparent conductive glass as a novel high-performance counter electrode for dye-sensitized solar cells. After an appropriate reaction time, the entire surface of the conductive glass substrate was uniformly covered by ultrathin MoS2 nanofilms with a thickness of only several stacked layers. Electrochemical impedance spectroscopy and cyclic voltammetry reveal that the MoS2 nanofilms possess excellent catalytic activity towards tri-iodide reduction. When used in dye-sensitized solar cells, the MoS2 nanofilms show an impressive energy conversion efficiency of 8.3%, which is higher than that of a Pt-based electrode and very promising to be a desirable alternative counter electrode. Considering their ultrathin thickness, superior catalytic activity, simple preparation process and low cost, the as-prepared MoS2 nanofilms with high photovoltaic performance are expected to be widely employed in dye-sensitized solar cells. PMID:27545846

  3. C-MOS array design techniques

    NASA Technical Reports Server (NTRS)

    Feller, A.

    1978-01-01

    The entire complement of standard cells and components, except for the set-reset flip-flop, was completed. Two levels of checking were performed on each device. Logic cells and topological layout are described. All the related computer programs were coded and one level of debugging was completed. The logic for the test chip was modified and updated. This test chip served as the first test vehicle to exercise the standard cell complementary MOS(C-MOS) automatic artwork generation capability.

  4. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann

    2016-04-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  5. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-04-01

    Molybdenum disulfide (MoS2) is currently under intensive study because of its exceptional optical and electrical properties in few-layer form. However, how charge transport mechanisms vary with the number of layers in MoS2 flakes remains unclear. Here, exfoliated flakes of MoS2 with various thicknesses were successfully fabricated into field-effect transistors (FETs) to measure the thickness and temperature dependences of electrical mobility. For these MoS2 FETs, measurements at both 295 K and 77 K revealed the maximum mobility for layer thicknesses between 5 layers (˜3.6 nm) and 10 layers (˜7 nm), with ˜70 cm2 V-1 s-1 measured for 5 layer devices at 295 K. Temperature-dependent mobility measurements revealed that the mobility rises with increasing temperature to a maximum. This maximum occurs at increasing temperature with increasing layer thickness, possibly due to strong Coulomb scattering from charge impurities or weakened electron-phonon interactions for thicker devices. Temperature-dependent conductivity measurements for different gate voltages revealed a metal-to-insulator transition for devices thinner than 10 layers, which may enable new memory and switching applications. This study advances the understanding of fundamental charge transport mechanisms in few-layer MoS2, and indicates the promise of few-layer transition metal dichalcogenides as candidates for potential optoelectronic applications.

  6. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors.

    PubMed

    Lin, Ming-Wei; Kravchenko, Ivan I; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2016-04-22

    Molybdenum disulfide (MoS2) is currently under intensive study because of its exceptional optical and electrical properties in few-layer form. However, how charge transport mechanisms vary with the number of layers in MoS2 flakes remains unclear. Here, exfoliated flakes of MoS2 with various thicknesses were successfully fabricated into field-effect transistors (FETs) to measure the thickness and temperature dependences of electrical mobility. For these MoS2 FETs, measurements at both 295 K and 77 K revealed the maximum mobility for layer thicknesses between 5 layers (∼3.6 nm) and 10 layers (∼7 nm), with ∼70 cm(2) V(-1) s(-1) measured for 5 layer devices at 295 K. Temperature-dependent mobility measurements revealed that the mobility rises with increasing temperature to a maximum. This maximum occurs at increasing temperature with increasing layer thickness, possibly due to strong Coulomb scattering from charge impurities or weakened electron-phonon interactions for thicker devices. Temperature-dependent conductivity measurements for different gate voltages revealed a metal-to-insulator transition for devices thinner than 10 layers, which may enable new memory and switching applications. This study advances the understanding of fundamental charge transport mechanisms in few-layer MoS2, and indicates the promise of few-layer transition metal dichalcogenides as candidates for potential optoelectronic applications. PMID:26963583

  7. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  8. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  9. Advanced Silicon Solar Cell Device Physics and Design

    NASA Astrophysics Data System (ADS)

    Deceglie, Michael Gardner

    A fundamental challenge in the development and deployment of solar photovoltaic technology is a reduction in cost enabling direct competition with fossil-fuel-based energy sources. A key driver in this cost reduction is optimized device efficiency, because increased energy output leverages all photovoltaic system costs, from raw materials and module manufacturing to installation and maintenance. To continue progress toward higher conversion efficiencies, solar cells are being fabricated with increasingly complex designs, including engineered nanostructures, heterojunctions, and novel contacting and passivation schemes. Such advanced designs require a comprehensive and unified understanding of the optical and electrical device physics at the microscopic scale. This thesis focuses on a microscopic understanding of solar cell optoelectronic performance and its impact on cell optimization. We consider this in three solar cell platforms: thin-film crystalline silicon, amorphous/crystalline silicon heterojunctions, and thin-film cells with nanophotonic light trapping. The work described in this thesis represents a powerful design paradigm, based on a detailed physical understanding of the mechanisms governing solar cell performance. Furthermore, we demonstrate the importance of understanding not just the individual mechanisms, but also their interactions. Such an approach to device optimization is critical for the efficiency and competitiveness of future generations of solar cells.

  10. Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles.

    PubMed

    Yan, Aiming; Velasco, Jairo; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Crommie, Michael F; Zettl, Alex

    2015-10-14

    Monolayer molybdenum disulfide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS2-based electronic devices. PMID:26317240

  11. Control system for insertion devices at the advanced photon source

    SciTech Connect

    Makarov, Oleg A.; Den Hartog, Patric; Moog, Elizabeth R.; Smith, Martin L.

    1997-07-01

    Eighteen insertion devices (IDs) are installed at the Advanced Photon Source (APS), and three more are scheduled for installation by the end of this year. A distributed control system for insertion devices at the APS storage ring was created with the Experimental Physics and Industrial Control System (EPICS). The basic components of this system are operator interfaces (OPIs), input output controllers (IOCs), and a local area network that allows the OPI and IOC to communicate. The IOC operates under the VxWorks OS with an EPICS database and a sequencer. The sequencer runs an ID control program written in State Notation Language. The OPI is built with the EPICS tool MEDM and provides display screens with input and output fields and buttons for gap control of the IDs. Global commands like 'open all IDs' are C-shell scripts invoked from the display menu. The algorithms for control and protection of the ID and ID vacuum chamber and the accuracy of gap control are discussed.

  12. Control system for insertion devices at the Advanced Photon Source

    SciTech Connect

    Makarov, O.A.; Den Hartog, P.; Moog, E.R.; Smith, M.L.

    1997-09-01

    Eighteen insertion devices (IDs) are installed at the Advanced Photon Source (APS), and three more are scheduled for installation by the end of this year. A distributed control system for insertion devices at the APS storage ring was created with the Experimental Physics and Industrial Control System (EPICS). The basic components of this system are operator interfaces (OPIs), input output controllers (IOCs), and a local area network that allows the OPI and IOC to communicate. The IOC operates under the VxWorks OS with an EPICS database and a sequencer. The sequencer runs an ID control program written in State Notation Language. The OPI is built with the EPICS tool MEDM and provides display screens with input and output fields and buttons for gap control of the IDs. Global commands like ``open all IDs`` are C-shell scripts invoked from the display menu. The algorithms for control and protection of the ID and ID vacuum chamber and the accuracy of gap control are discussed.

  13. Control system for insertion devices at the advanced photon source

    SciTech Connect

    Makarov, O.A.; Den Hartog, P.; Moog, E.R.; Smith, M.L.

    1997-07-01

    Eighteen insertion devices (IDs) are installed at the Advanced Photon Source (APS), and three more are scheduled for installation by the end of this year. A distributed control system for insertion devices at the APS storage ring was created with the Experimental Physics and Industrial Control System (EPICS). The basic components of this system are operator interfaces (OPIs), input output controllers (IOCs), and a local area network that allows the OPI and IOC to communicate. The IOC operates under the VxWorks OS with an EPICS database and a sequencer. The sequencer runs an ID control program written in State Notation Language. The OPI is built with the EPICS tool MEDM and provides display screens with input and output fields and buttons for gap control of the IDs. Global commands like {open_quotes}open all IDs{close_quotes} are C-shell scripts invoked from the display menu. The algorithms for control and protection of the ID and ID vacuum chamber and the accuracy of gap control are discussed. {copyright} {ital 1997 American Institute of Physics.}

  14. Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

    NASA Technical Reports Server (NTRS)

    Patterson, Richard; Hammoud, Ahmad; Dones, Keishla R.

    2009-01-01

    Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

  15. Towards manufacturing of advanced logic devices by double-patterning

    NASA Astrophysics Data System (ADS)

    Koay, Chiew-seng; Halle, Scott; Holmes, Steven; Petrillo, Karen; Colburn, Matthew; van Dommelen, Youri; Jiang, Aiqin; Crouse, Michael; Dunn, Shannon; Hetzer, David; Kawakami, Shinichiro; Cantone, Jason; Huli, Lior; Rodgers, Martin; Martinick, Brian

    2011-04-01

    As reported previously, the IBM Alliance has established a DETO (Double-Expose-Track-Optimized) baseline, in collaboration with ASML, TEL, and CNSE, to evaluate commercially available DETO photoresist system for the manufacturing of advanced logic devices. Although EUV lithography is the baseline strategy for <2x nm logic nodes, alternative techniques are still being pursued. The DETO technique produces pitch-split patterns capable of supporting 16 nm and 11 nm node semiconductor devices. We present the long-term monitoring performances of CD uniformity (CDU), overlay, and defectivity of our DETO process. CDU and overlay performances for controlled experiments are also presented. Two alignment schemes in DETO are compared experimentally for their effects on inter-level & intralevel overlays, and space CDU. We also experimented with methods for improving CDU, in which the CD-OptimizerTMand DoseMapperTM were evaluated separately and in tandem. Overlay improvements using the Correction Per Exposure (CPE) and the intra-field High-Order Process Correction (i-HOPC) were compared against the usual linear correction method. The effects of the exposure field size are also compared between a small field and the full field. Included in all the above, we also compare the performances derived from stack-integrated wafers and bare-Si wafers.

  16. Advanced materials and concepts for energy storage devices

    NASA Astrophysics Data System (ADS)

    Teng, Shiang Jen

    Over the last decade, technological progress and advances in the miniaturization of electronic devices have increased demands for light-weight, high-efficiency, and carbon-free energy storage devices. These energy storage devices are expected to play important roles in automobiles, the military, power plants, and consumer electronics. Two main types of electrical energy storage systems studied in this research are Li ion batteries and supercapacitors. Several promising solid state electrolytes and supercapacitor electrode materials are investigated in this research. The first section of this dissertation is focused on the novel results on pulsed laser annealing of Li7La3Zr2O12 (LLZO). LLZO powders with a tetragonal structure were prepared by a sol-gel technique, then a pulsed laser annealing process was employed to convert the tetragonal powders to cubic LLZO without any loss of lithium. The second section of the dissertation reports on how Li5La 3Nb2O12 (LLNO) was successfully synthesized via a novel molten salt synthesis (MSS) method at the relatively low temperature of 900°C. The low sintering temperature prevented the loss of lithium that commonly occurs during synthesis using conventional solid state or wet chemical reactions. The second type of energy storage device studied is supercapacitors. Currently, research on supercapacitors is focused on increasing their energy densities and lowering their overall production costs by finding suitable electrode materials. The third section of this dissertation details how carbonized woods electrodes were used as supercapacitor electrode materials. A high energy density of 45.6 Wh/kg and a high power density of 2000 W/kg were obtained from the supercapacitor made from carbonized wood electrodes. The high performance of the supercapacitor was discovered to originate from the hierarchical porous structures of the carbonized wood. Finally, the fourth section of this dissertation is on the electrochemical effects of

  17. MoS2 monolayers on nanocavities: enhancement in light–matter interaction

    NASA Astrophysics Data System (ADS)

    Janisch, Corey; Song, Haomin; Zhou, Chanjing; Lin, Zhong; Elías, Ana Laura; Ji, Dengxin; Terrones, Mauricio; Gan, Qiaoqiang; Liu, Zhiwen

    2016-06-01

    Two-dimensional (2D) atomic crystals and van der Waals heterostructures constitute an emerging platform for developing new functional ultra-thin electronic and optoelectronic materials for novel energy-efficient devices. However, in most thin-film optical applications, there is a long-existing trade-off between the effectiveness of light–matter interactions and the thickness of semiconductor materials, especially when the materials are scaled down to atom thick dimensions. Consequently, enhancement strategies can introduce significant advances to these atomically thick materials and devices. Here we demonstrate enhanced absorption and photoluminescence generation from MoS2 monolayers coupled with a planar nanocavity. This nanocavity consists of an alumina nanolayer spacer sandwiched between monolayer MoS2 and an aluminum reflector, and can strongly enhance the light–matter interaction within the MoS2, increasing the exclusive absorption of monolayer MoS2 to nearly 70% at a wavelength of 450 nm. The nanocavity also modifies the spontaneous emission rate, providing an additional design freedom to control the interaction between light and 2D materials.

  18. 76 FR 48169 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-08

    ... Microbiology/ Medical Countermeasure Devices; Public Meeting AGENCY: Food and Drug Administration, HHS. ACTION... following public meeting: ``Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical... multiplexed microbiology/medical countermeasure (MCM) devices, their clinical application and public...

  19. Extended life testing evaluation of complementary MOS integrated circuits

    NASA Technical Reports Server (NTRS)

    Brosnan, T. E.

    1972-01-01

    The purpose of the extended life testing evaluation of complementary MOS integrated circuits was twofold: (1) To ascertain the long life capability of complementary MOS devices. (2) To assess the objectivity and reliability of various accelerated life test methods as an indication or prediction tool. In addition, the determination of a suitable life test sequence for these devices was of importance. Conclusions reached based on the parts tested and the test results obtained was that the devices were not acceptable.

  20. Lithography for enabling advances in integrated circuits and devices.

    PubMed

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing. PMID:22802500

  1. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

    NASA Astrophysics Data System (ADS)

    Shuyan, Zhu; Jingping, Xu; Lisheng, Wang; Yuan, Huang; Wing Man, Tang

    2015-03-01

    GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al2O3 IPL exhibits better interfacial and electrical properties than the device with ZnO IPL: lower interface-state density (7.2 × 1012 eV-1 cm-2), lower leakage current density (3.60 × 10-7 A/cm2 at Vg = 1 V) and good C-V behavior. Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112).

  2. Design of advanced ultrasonic transducers for welding devices.

    PubMed

    Parrini, L

    2001-11-01

    A new high frequency ultrasonic transducer has been conceived, designed, prototyped, and tested. In the design phase, an advanced approach was used and established. The method is based on an initial design estimate obtained with finite element method (FEM) simulations. The simulated ultrasonic transducers and resonators are then built and characterized experimentally through laser interferometry and electrical resonance spectra. The comparison of simulation results with experimental data allows the parameters of FEM models to be adjusted and optimized. The achieved FEM simulations exhibit a remarkably high predictive potential and allow full control of the vibration behavior of the transducer. The new transducer is mounted on a wire bonder with a flange whose special geometry was calculated by means of FEM simulations. This flange allows the transducer to be attached on the wire bonder, not only in longitudinal nodes, but also in radial nodes of the ultrasonic field excited in the horn. This leads to a total decoupling of the transducer to the wire bonder, which has not been achieved so far. The new approach to mount ultrasonic transducers on a welding device is of major importance, not only for wire bonding, but also for all high power ultrasound applications and has been patented. PMID:11800125

  3. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Mekhiche, Mike; Dufera, Hiz; Montagna, Deb

    2012-10-29

    The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressed cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.

  4. MoS2 spaser

    NASA Astrophysics Data System (ADS)

    Jayasekara, Charith; Premaratne, Malin; Gunapala, Sarath D.; Stockman, Mark I.

    2016-04-01

    We present a comprehensive analysis of a spaser made of a circular shaped highly doped molybdenum disulfide (MoS2) resonator. "Spaser" is an acronym for "surface plasmon amplification by stimulated emission of radiation"-a nanoscale source of surface plasmons generated by stimulated emission in a plasmonic resonator which receives energy nonradiatively. By considering localized surface plasmon modes, operation characteristics of the model are analysed, and tunability of the design is demonstrated. We find the optimum geometric and material parameters of the spaser that provides efficient outputs and carryout a comparative analysis with a similar circular spaser made of graphene. Owing to physical and chemical properties of MoS2 and the active medium, the proposed design delivers efficient outputs in terms of spaser mode energy, operating thresholds, Q-factor, and electric field amplitude. Lower operating thresholds and higher mode energies are notable advantages of the design. Owing to having many superior features to existing similar designs, this MoS2 spaser may be much suited for applications in nanoplasmonic devices.

  5. Point-of-care (POC) devices by means of advanced MEMS.

    PubMed

    Karsten, Stanislav L; Tarhan, Mehmet C; Kudo, Lili C; Collard, Dominique; Fujita, Hiroyuki

    2015-12-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications. PMID:26459443

  6. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    PubMed

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface. PMID:27257639

  7. Advanced methods for controlling untethered magnetic devices using rotating magnetic fields

    NASA Astrophysics Data System (ADS)

    Mahoney, Arthur W., Jr.

    This dissertation presents results documenting advancements on the control of untethered magnetic devices, such as magnetic "microrobots" and magnetically actuated capsule endoscopes, motivated by problems in minimally invasive medicine. This dissertation focuses on applying rotating magnetic fields for magnetic manipulation. The contributions include advancements in the way that helical microswimmers (devices that mimic the propulsion of bacterial flagella) are controlled in the presence of gravitational forces, advancements in ways that groups of untethered magnetic devices can be differentiated and semi-independently controlled, advancements in the way that untethered magnetic device can be controlled with a single rotating permanent magnet, and an improved understanding in the nature of the magnetic force applied to an untethered device by a rotating magnet.

  8. Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes with enhanced photoluminescence.

    PubMed

    Yuan, Cailei; Cao, Yingjie; Luo, Xingfang; Yu, Ting; Huang, Zhenping; Xu, Bo; Yang, Yong; Li, Qinliang; Gu, Gang; Lei, Wen

    2015-11-01

    The precise control of the morphology and crystal shape of MoS2 nanostructures is of particular importance for their application in nanoelectronic and optoelectronic devices. Here, we describe a single step route for the synthesis of monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes using a chemical vapor deposition method. First-principles calculations demonstrated that the bandgap of the pyramid-like MoS2 nanodot is a direct bandgap. Enhanced local photoluminescence emission was observed in the pyramid-like MoS2 nanodot, in comparison with monolayered MoS2 flakes. The findings presented here provide new opportunities to tailor the physical properties of MoS2via morphology-controlled synthesis. PMID:26439853

  9. Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes with enhanced photoluminescence

    NASA Astrophysics Data System (ADS)

    Yuan, Cailei; Cao, Yingjie; Luo, Xingfang; Yu, Ting; Huang, Zhenping; Xu, Bo; Yang, Yong; Li, Qinliang; Gu, Gang; Lei, Wen

    2015-10-01

    The precise control of the morphology and crystal shape of MoS2 nanostructures is of particular importance for their application in nanoelectronic and optoelectronic devices. Here, we describe a single step route for the synthesis of monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes using a chemical vapor deposition method. First-principles calculations demonstrated that the bandgap of the pyramid-like MoS2 nanodot is a direct bandgap. Enhanced local photoluminescence emission was observed in the pyramid-like MoS2 nanodot, in comparison with monolayered MoS2 flakes. The findings presented here provide new opportunities to tailor the physical properties of MoS2via morphology-controlled synthesis.

  10. Toward Ferroelectric Control of Monolayer MoS2.

    PubMed

    Nguyen, Ariana; Sharma, Pankaj; Scott, Thomas; Preciado, Edwin; Klee, Velveth; Sun, Dezheng; Lu, I-Hsi Daniel; Barroso, David; Kim, SukHyun; Shur, Vladimir Ya; Akhmatkhanov, Andrey R; Gruverman, Alexei; Bartels, Ludwig; Dowben, Peter A

    2015-05-13

    The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer. PMID:25909996

  11. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Hart, Philip R.

    2011-09-27

    This presentation from the Water Peer Review highlights one of the program's marine and hyrokinetics device design projects to scale up the current Ocean Power Technology PowerBuoy from 150kW to 500kW.

  12. Advanced integrated safeguards using front-end-triggering devices

    SciTech Connect

    Howell, J.A.; Whitty, W.J.

    1995-12-01

    This report addresses potential uses of front-end-triggering devices for enhanced safeguards. Such systems incorporate video surveillance as well as radiation and other sensors. Also covered in the report are integration issues and analysis techniques.

  13. HeartWare left ventricular assist device for the treatment of advanced heart failure.

    PubMed

    Hanke, Jasmin S; Rojas, Sebastian V; Avsar, Murat; Bara, Christoph; Ismail, Issam; Haverich, Axel; Schmitto, Jan D

    2016-01-01

    The importance of mechanical circulatory support in the therapy of advanced heart failure is steadily growing. The rapid developments in the field of mechanical support are characterized by continuous miniaturization and enhanced performance of the assist devices, providing increased pump durability and prolonged patient survival. The HeartWare left ventricular assist device system (HeartWare Inc., Framingham, MA, USA) is a mechanical ventricular assist device with over 8000 implantations worldwide. Compared with other available assist devices it is smaller in size and used in a broad range of patients. The possibility of minimally invasive procedures is one of the major benefits of the device - allowing implants and explants, as well as exchanges of the device with reduced surgical impact. We present here a review of the existing literature on the treatment of advanced heart failure using the HeartWare left ventricular assist device system. PMID:26597386

  14. Morphology engineering of monolayer MoS2 by adjusting chemical environment during growth

    NASA Astrophysics Data System (ADS)

    Cao, Yingjie; Luo, Xingfang; Yuan, Cailei; Han, Shuming; Yu, Ting; Yang, Yong; Li, Qinliang

    2015-11-01

    The precise control of the morphology of monolayer MoS2 is of particular importance for their potential applications and device performance. In this work, we present an experimental method to study the shape evolution of the chemical vapor deposition (CVD) grown MoS2 flakes. We observed that the morphology of monolayer MoS2 flakes transformed from truncated triangular shape to triangular shape by increasing the stoichiometric ratio of S:Mo, and consequently tailor the optical properties of MoS2 flakes. The results suggest the possibility to engineer the morphology of monolayer MoS2 by adjusting the chemical environment during growth.

  15. Devices in the management of advanced, chronic heart failure

    PubMed Central

    Abraham, William T.; Smith, Sakima A.

    2013-01-01

    Heart failure (HF) is a global phenomenon, and the overall incidence and prevalence of the condition are steadily increasing. Medical therapies have proven efficacious, but only a small number of pharmacological options are in development. When patients cease to respond adequately to optimal medical therapy, cardiac resynchronization therapy has been shown to improve symptoms, reduce hospitalizations, promote reverse remodelling, and decrease mortality. However, challenges remain in identifying the ideal recipients for this therapy. The field of mechanical circulatory support has seen immense growth since the early 2000s, and left ventricular assist devices (LVADs) have transitioned over the past decade from large, pulsatile devices to smaller, more-compact, continuous-flow devices. Infections and haematological issues are still important areas that need to be addressed. Whereas LVADs were once approved only for ‘bridge to transplantation’, these devices are now used as destination therapy for critically ill patients with HF, allowing these individuals to return to the community. A host of novel strategies, including cardiac contractility modulation, implantable haemodynamic-monitoring devices, and phrenic and vagus nerve stimulation, are under investigation and might have an impact on the future care of patients with chronic HF. PMID:23229137

  16. MovAid- a novel device for advanced rehabilitation monitoring.

    PubMed

    Gupta, Prashant; Verma, Piyush; Gupta, Rakesh; Verma, Bhawna

    2015-08-01

    The present article introduces a new device "MovAid" which helps to measure and monitor rehabilitation. It has two main components- "MovAid device" and the "MovAid Smart Phone Application". The device connects wirelessly to the MovAid smart phone application via Bluetooth. It has electronic sensors to measure three important parameters of the patient- Angle of Joint Bent, Lift from the ground and Orientation of the limb. A mono-axis flex sensor to measure the degree of joint bent and a 3-axis accelerometer and gyroscope to measure the orientation of the limb and lift from the ground have been used. MovAid system bridges the gap between caretakers and patients, empowering both in ways never thought of before, by providing detailed and accurate data on every move. PMID:26737332

  17. Advances in dental local anesthesia techniques and devices: An update

    PubMed Central

    Saxena, Payal; Gupta, Saurabh K.; Newaskar, Vilas; Chandra, Anil

    2013-01-01

    Although local anesthesia remains the backbone of pain control in dentistry, researches are going to seek new and better means of managing the pain. Most of the researches are focused on improvement in the area of anesthetic agents, delivery devices and technique involved. Newer technologies have been developed that can assist the dentist in providing enhanced pain relief with reduced injection pain and fewer adverse effects. This overview will enlighten the practicing dentists regarding newer devices and methods of rendering pain control comparing these with the earlier used ones on the basis of research and clinical studies available. PMID:24163548

  18. Novel device-based interventional strategies for advanced heart failure.

    PubMed

    Toth, Gabor G; Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  19. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  20. A Comprehensive Microfluidics Device Construction and Characterization Module for the Advanced Undergraduate Analytical Chemistry Laboratory

    ERIC Educational Resources Information Center

    Piunno, Paul A. E.; Zetina, Adrian; Chu, Norman; Tavares, Anthony J.; Noor, M. Omair; Petryayeva, Eleonora; Uddayasankar, Uvaraj; Veglio, Andrew

    2014-01-01

    An advanced analytical chemistry undergraduate laboratory module on microfluidics that spans 4 weeks (4 h per week) is presented. The laboratory module focuses on comprehensive experiential learning of microfluidic device fabrication and the core characteristics of microfluidic devices as they pertain to fluid flow and the manipulation of samples.…

  1. The work function engineering and thermal stability of novel metal gate electrodes for advanced CMOS devices

    NASA Astrophysics Data System (ADS)

    Zhao, Penghui

    depleted silicon on insulator (FDSOI) NMOS or PMOS with thermal stability up to 1000°C. Compared to MoXSi YNZ (X=46% Y=12%, Z=42%) gates on HfO2, the gates on FlfSiO provides better thermal stability up to 1000°C with no degradation of work function (˜4.4 eV), EOT, fixed charge density, or gate leakage current. These results suggest that MoSiN films with optimized compositions could be promising metal gate candidates for advanced CMOS devices. The thermal stability of FUSI NiSi metal gate electrodes on both SiON and Hf-based high-kappadielectrics after typical back-end of line (BEOL) thermal annealing has been also investigated. It has been found that the thermal stability of FUSI NiSi metal gates is strongly dependent on the dopants and annealing ambient. The dependence of nickel diffusion on the dielectric thickness and dopants into the silicon channel is discussed in detail. It was found that 5 nm gate dielectric layers are sufficient to inhibit any detectable nickel diffusion from the FUSI NiSi metal gates into the silicon channel.

  2. Flexible low-power RF nanoelectronics in the GHz regime using CVD MoS2

    NASA Astrophysics Data System (ADS)

    Yogeesh, Maruthi

    Two-dimensional (2D) materials have attracted substantial interest for flexible nanoelectronics due to the overall device mechanical flexibility and thickness scalability for high mechanical performance and low operating power. In this work, we demonstrate the first MoS2 RF transistors on flexible substrates based on CVD-grown monolayers, featuring record GHz cutoff frequency (5.6 GHz) and saturation velocity (~1.8×106 cm/s), which is significantly superior to contemporary organic and metal oxide thin-film transistors. Furthermore, multicycle three-point bending results demonstrated the electrical robustness of our flexible MoS2 transistors after 10,000 cycles of mechanical bending. Additionally, basic RF communication circuit blocks such as amplifier, mixer and wireless AM receiver have been demonstrated. These collective results indicate that MoS2 is an ideal advanced semiconducting material for low-power, RF devices for large-area flexible nanoelectronics and smart nanosystems owing to its unique combination of large bandgap, high saturation velocity and high mechanical strength.

  3. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  4. Covalent Modification of MoS2 with Poly(N-vinylcarbazole) for Solid-State Broadband Optical Limiters.

    PubMed

    Cheng, Hongxia; Dong, Ningning; Bai, Ting; Song, Yi; Wang, Jun; Qin, Yuanhao; Zhang, Bin; Chen, Yu

    2016-03-18

    New soluble MoS2 nanosheets covalently functionalized with poly(N-vinylcarbazole) (MoS2-PVK) were in situ synthesized for the first time. In contrast to MoS2 and MoS2 /PVK blends, both the solution of MoS2 -PVK in DMF and MoS2-PVK/poly(methyl methacrylate) (PMMA) film show superior nonlinear optical and optical limiting responses. The MoS2-PVK/PMMA film shows the largest nonlinear coefficients (βeff) of about 917 cm GW(-1) at λ=532 nm (cf. 100.69 cm GW(-1) for MoS2/PMMA and 125.12 cm GW(-1) for MoS2/PVK/PMMA) and about 461 cm GW(-1) at λ=1064 nm (cf. -48.92 cm GW(-1) for MoS2/PMMA and 147.56 cm GW(-1) for MoS2/PVK/PMMA). A larger optical limiting effect, with thresholds of about 0.3 GW cm(-2) at λ=532 nm and about 0.5 GW cm(-2) at λ=1064 nm, was also achieved from the MoS2-PVK/PMMA film. These values are among the highest reported for MoS2-based nonlinear optical materials. These results show that covalent functionalization of MoS2 with polymers is an effective way to improve nonlinear optical responses for efficient optical limiting devices. PMID:26891470

  5. Advanced investigation of two-phase charge-coupled devices

    NASA Technical Reports Server (NTRS)

    Kosonocky, W. F.; Carnes, J. E.

    1973-01-01

    The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

  6. Recent advances in spintronics for emerging memory devices

    NASA Astrophysics Data System (ADS)

    Kang, Seung H.

    2008-09-01

    The emerging field of spintronics has the potential to bring game-changing opportunities to nanoelectronic technologies far beyond its traditional contribution to mass storage applications such as hard disk drives. The value proposition is timely since the dominant semiconductor industry is in pursuit of “More-than-Moore” to extend the technology roadmap or to create functional diversifications through enhanced system platforms. This article overviews a promising spintronic device in conjunction with recent breakthroughs in tunnel magnetoresistance and spin-transfer-torque magnetization switching.

  7. Layer-by-layer self-assembly of polyelectrolyte functionalized MoS2 nanosheets.

    PubMed

    Shen, Jianfeng; Pei, Yu; Dong, Pei; Ji, Jin; Cui, Zheng; Yuan, Junhua; Baines, Robert; Ajayan, Pulickel M; Ye, Mingxin

    2016-05-01

    Few-layered polyelectrolyte functionalized MoS2 nanosheets were obtained for the first time through in situ polymerization of MoS2 nanosheets with poly(acrylic acid) and poly(acrylamide), both of which demonstrated excellent dispersibility and stability in water. After designing and optimizing the components of this series of polyelectrolyte functionalized MoS2 nanosheets, by exploiting the electrostatic interactions present in the modified MoS2 nanosheets, we further created a series of layer-by-layer (LBL) self-assembling MoS2-based films. To this end, uniform MoS2 nanosheet-based LBL films were precisely deposited on substrates such as quartz, silicon, and ITO. The polyelectrolyte functionalized MoS2 nanosheet assembled LBL film-modified electrodes demonstrated enhanced electrocatalytic activity for H2O2. As such, they are conducive to efficient sensors and advanced biosensing systems. PMID:27102889

  8. River Devices to Recover Energy with Advanced Materials (River DREAM)

    SciTech Connect

    McMahon, Daniel P.

    2013-07-03

    The purpose of this project is to develop a generator called a Galloping Hydroelectric Energy Extraction Device (GHEED). It uses a galloping prism to convert water flow into linear motion. This motion is converted into electricity via a dielectric elastomer generator (DEG). The galloping mechanism and the DEG are combined to create a system to effectively generate electricity. This project has three research objectives: 1. Oscillator development and design a. Characterize galloping behavior, evaluate control surface shape change on oscillator performance and demonstrate shape change with water flow change. 2. Dielectric Energy Generator (DEG) characterization and modeling a. Characterize and model the performance of the DEG based on oscillator design 3. Galloping Hydroelectric Energy Extraction Device (GHEED) system modeling and integration a. Create numerical models for construction of a system performance model and define operating capabilities for this approach Accomplishing these three objectives will result in the creation of a model that can be used to fully define the operating parameters and performance capabilities of a generator based on the GHEED design. This information will be used in the next phase of product development, the creation of an integrated laboratory scale generator to confirm model predictions.

  9. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    SciTech Connect

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-06

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as {approx} 16 We/kg and {approx} 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is {approx} 640 m2 and {approx} 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is {approx} 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is {approx} 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  10. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    NASA Astrophysics Data System (ADS)

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-01

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as ˜ 16 We/kg and ˜ 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is ˜ 640 m2 and ˜ 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is ˜ 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is ˜ 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  11. Management Observation System (MOS)

    SciTech Connect

    Michael Baker; Robert Bryant; Teresa Childs

    2006-01-01

    The Management Observation System (MOS) was developed at Oak Ridge National Laboratory (ORNL) to improve the overall safety of the Laboratory. The MOS provides a tool to document management observations, records time spent in the field conducting observations, and the results of those observations. It also documents if there are lessons learned from a particular observation or if follow-up actions are needed to correct issues or deficiencies identified. Management has found this a very useful tool to use as a proactive approach to identifying and/or correcting potential problems before they become safety related issues.

  12. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  13. Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S.

    PubMed

    Kim, Youngchan; Bark, Hunyoung; Ryu, Gyeong Hee; Lee, Zonghoon; Lee, Changgu

    2016-05-11

    Monolayer MoS2 nanosheets are potentially useful in optoelectronics, photoelectronics, and nanoelectronics due to their flexibility, mechanical strength, and direct band gap of 1.89 eV. Experimentalists have studied the synthesis of MoS2 using chemical vapor deposition (CVD) methods in an effort to fabricate wafer-scale nanofilms with a high uniformity and continuity for practical electronic applications. In this work, we applied the CVD method to a reaction of MoO3 powder and H2S gas to grow high-quality polycrystalline monolayer MoS2 sheets with unprecedented uniformity over an area of several centimeters. The monolayer MoS2 was characterized using Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), x-ray photoemission spectroscopy (XPS), and transmission electron microscopy (TEM). The top-gate field-effect transistor prepared with a 30 nm HfO2 capping layer displayed an electrical mobility of 1 cm(2) v(-1) s(-1) and an I on/off of ~10(5). This method paves the way for the development of practical devices with MoS2 monolayers and advances fundamental research. PMID:27058779

  14. Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S

    NASA Astrophysics Data System (ADS)

    Kim, Youngchan; Bark, Hunyoung; Ryu, Gyeong Hee; Lee, Zonghoon; Lee, Changgu

    2016-05-01

    Monolayer MoS2 nanosheets are potentially useful in optoelectronics, photoelectronics, and nanoelectronics due to their flexibility, mechanical strength, and direct band gap of 1.89 eV. Experimentalists have studied the synthesis of MoS2 using chemical vapor deposition (CVD) methods in an effort to fabricate wafer-scale nanofilms with a high uniformity and continuity for practical electronic applications. In this work, we applied the CVD method to a reaction of MoO3 powder and H2S gas to grow high-quality polycrystalline monolayer MoS2 sheets with unprecedented uniformity over an area of several centimeters. The monolayer MoS2 was characterized using Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), x-ray photoemission spectroscopy (XPS), and transmission electron microscopy (TEM). The top-gate field-effect transistor prepared with a 30 nm HfO2 capping layer displayed an electrical mobility of 1 cm2 v‑1 s‑1 and an I on/off of ~105. This method paves the way for the development of practical devices with MoS2 monolayers and advances fundamental research.

  15. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  16. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  17. Advanced numerical methods and software approaches for semiconductor device simulation

    SciTech Connect

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  18. Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

    DOE PAGESBeta

    Carey, Graham F.; Pardhanani, A. L.; Bova, S. W.

    2000-01-01

    In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of themore » methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.« less

  19. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  20. Current state-of-the-art of device therapy for advanced heart failure

    PubMed Central

    Lee, Lawrence S.; Shekar, Prem S.

    2014-01-01

    Heart failure remains one of the most common causes of morbidity and mortality worldwide. The advent of mechanical circulatory support devices has allowed significant improvements in patient survival and quality of life for those with advanced or end-stage heart failure. We provide a general overview of past and current mechanical circulatory support devices encompassing options for both short- and long-term ventricular support. PMID:25559828

  1. Verification, Validation and Credibility Assessment of a Computational Model of the Advanced Resistive Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Werner, C. R.; Humphreys, B. T.; Mulugeta, L.

    2014-01-01

    The Advanced Resistive Exercise Device (ARED) is the resistive exercise device used by astronauts on the International Space Station (ISS) to mitigate bone loss and muscle atrophy due to extended exposure to microgravity (micro g). The Digital Astronaut Project (DAP) has developed a multi-body dynamics model of biomechanics models for use in spaceflight exercise physiology research and operations. In an effort to advance model maturity and credibility of the ARED model, the DAP performed verification, validation and credibility (VV and C) assessment of the analyses of the model in accordance to NASA-STD-7009 'Standards for Models and Simulations'.

  2. Advanced upper limb prosthetic devices: implications for upper limb prosthetic rehabilitation.

    PubMed

    Resnik, Linda; Meucci, Marissa R; Lieberman-Klinger, Shana; Fantini, Christopher; Kelty, Debra L; Disla, Roxanne; Sasson, Nicole

    2012-04-01

    The number of catastrophic injuries caused by improvised explosive devices in the Afghanistan and Iraq Wars has increased public, legislative, and research attention to upper limb amputation. The Department of Veterans Affairs (VA) has partnered with the Defense Advanced Research Projects Agency and DEKA Integrated Solutions to optimize the function of an advanced prosthetic arm system that will enable greater independence and function. In this special communication, we examine current practices in prosthetic rehabilitation including trends in adoption and use of prosthetic devices, financial considerations, and the role of rehabilitation team members in light of our experiences with a prototype advanced upper limb prosthesis during a VA study to optimize the device. We discuss key challenges in the adoption of advanced prosthetic technology and make recommendations for service provision and use of advanced upper limb prosthetics. Rates of prosthetic rejection are high among upper limb amputees. However, these rates may be reduced with sufficient training by a highly specialized, multidisciplinary team of clinicians, and a focus on patient education and empowerment throughout the rehabilitation process. There are significant challenges emerging that are unique to implementing the use of advanced upper limb prosthetic technology, and a lack of evidence to establish clinical guidelines regarding prosthetic prescription and treatment. Finally, we make recommendations for future research to aid in the identification of best practices and development of policy decisions regarding insurance coverage of prosthetic rehabilitation. PMID:22464092

  3. Evaluation of advanced cooling therapy's esophageal cooling device for core temperature control.

    PubMed

    Naiman, Melissa; Shanley, Patrick; Garrett, Frank; Kulstad, Erik

    2016-05-01

    Managing core temperature is critical to patient outcomes in a wide range of clinical scenarios. Previous devices designed to perform temperature management required a trade-off between invasiveness and temperature modulation efficiency. The Esophageal Cooling Device, made by Advanced Cooling Therapy (Chicago, IL), was developed to optimize warming and cooling efficiency through an easy and low risk procedure that leverages heat transfer through convection and conduction. Clinical data from cardiac arrest, fever, and critical burn patients indicate that the Esophageal Cooling Device performs very well both in terms of temperature modulation (cooling rates of approximately 1.3°C/hour, warming of up to 0.5°C/hour) and maintaining temperature stability (variation around goal temperature ± 0.3°C). Physicians have reported that device performance is comparable to the performance of intravascular temperature management techniques and superior to the performance of surface devices, while avoiding the downsides associated with both. PMID:27043177

  4. Carbon nanotube- MoS2 p-n junction: Fabrication and transport properties

    NASA Astrophysics Data System (ADS)

    Bhanu, Udai; Islam, Muahmmad; Khondaker, Saiful

    2014-03-01

    Integrating two different nanoscale semicondcutors of opposite carrier types are of great interest for many electronic and optical applications. Few layers molybdenum disulfide (MoS2) is an n-type semiconductor while semiconductoing single walled carbon nanotubes (SWNT) show p-type behavior. In this work, we demonstrate a simple technique for integrating these two semiconductors for fabricating a p-n junction. Few layers MoS2 device were mechanically exfoliated from a single crystal of MoS2 and making electrical contact via electron beam lithography. Another pair of electrodes, which are orthogonal to MoS2 device, is deposited and semiconducting reach SWNT(s-SWNT) solution was dielectrophoretically assembled between the second pair of electrodes. The s-SWNT goes over the MoS2 and fabricates two p-n junctions. We will discuss the electronic transport properties of the fabricated devices.

  5. Advanced photovoltaic system simulator to demonstrate the performance of advanced photovoltaic cells and devices

    SciTech Connect

    Mrig, L.; DeBlasio, R.; O'Sullivan, G.A.; Tomko, R.P.

    1983-05-01

    This paper describes a photovoltaic system simulator for characterizing and evaluating the performance of advanced photovoltaic cells, modules, and arrays as well as for simulating the operation of advanced conceptual photovoltaic systems. The system simulator is capable of extrapolating the performance from a single laboratory cell, or of a module to power levels up to 10 kW. The major subsystems comprising the system simulator are (1) Solar Array Simulator, (2) Power Conditioning Unit, (3) Load Controller and Resistive Load Unit, (4) Data Acquisition and Control Unit, and (5) Cell Test Bed.

  6. STM study of monolayer MoS2 synthesized by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Mills, Adam; Chen, Chuanhui; Yu, Yifei; Cao, Linyui; Tao, Changgang

    2014-03-01

    Monolayer molybdenum disulfide (MoS2) , an atomically thin transition-metal dichalcogenide semiconductor with a direct band gap, as opposed to an indirect band gap in bulk MoS2, has recently captured a lot of research interest for its distinctive optical and electronic properties, and potential applications such as field effect transistors, optoelectronic devices and chemical sensors. Using scanning tunneling microscopy, we have investigated monolayer MoS2 synthesized by chemical vapor deposition. The structural and electronic properties of monolayer MoS2 grown on glassy carbon and other substrates will be presented. We will also discuss our preliminary scanning tunneling spectroscopy measurements on these samples.

  7. Towards intrinsic phonon transport in single-layer MoS2

    NASA Astrophysics Data System (ADS)

    Peng, Bo; Zhang, Hao; Shao, Hezhu; Xu, Yuanfeng; Zhang, Xiangchao; Zhu, Heyuan

    2016-06-01

    The intrinsic lattice thermal conductivity of MoS$_2$ is an important aspect in the design of MoS$_2$-based nanoelectronic devices. We investigate the lattice dynamics properties of MoS$_2$ by first principles calculations. The intrinsic thermal conductivity of single-layer MoS$_2$ is calculated using the Boltzmann transport equation for phonons. The obtained thermal conductivity agrees well with the measurements. The contributions of acoustic and optical phonons to the lattice thermal conductivity are evaluated. The size dependence of thermal conductivity is investigated as well.

  8. Aircrew Training Devices: Utility and Utilization of Advanced Instructional Features (Phase IV--Summary Report).

    ERIC Educational Resources Information Center

    Polzella, Donald J.; And Others

    Modern aircrew training devices (ATDs) are equipped with sophisticated hardware and software capabilities, known as advanced instructional features (AIFs), that permit a simulator instructor to prepare briefings, manage training, vary task difficulty/fidelity, monitor performance, and provide feedback for flight simulation training missions. The…

  9. Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse.

    PubMed

    Yu, Seong Hun; Lee, Youngbin; Jang, Sung Kyu; Kang, Jinyeong; Jeon, Jiwon; Lee, Changgu; Lee, Jun Young; Kim, Hyungjun; Hwang, Euyheon; Lee, Sungjoo; Cho, Jeong Ho

    2014-08-26

    We fabricated dye-sensitized MoS2 photodetectors that utilized a single-layer MoS2 treated with rhodamine 6G (R6G) organic dye molecules (with an optical band gap of 2.38 eV or 521 nm). The proposed photodetector showed an enhanced performance with a broad spectral photoresponse and a high photoresponsivity compared with the properties of the pristine MoS2 photodetectors. The R6G dye molecules deposited onto the MoS2 layer increased the photocurrent by an order of magnitude due to charge transfer of the photoexcited electrons from the R6G molecules to the MoS2 layer. Importantly, the photodetection response extended to the infrared (λ < 980 nm, which corresponded to about half the energy band gap of MoS2), thereby distinguishing the device performance from that of a pristine MoS2 device, in which detection was only possible at wavelengths shorter than the band gap of MoS2, i.e., λ < 681 nm. The resulting device exhibited a maximum photoresponsivity of 1.17 AW(–1), a photodetectivity of 1.5 × 10(7) Jones, and a total effective quantum efficiency (EQE) of 280% at 520 nm. The device design described here presents a significant step toward high-performance 2D nanomaterial-based photodetector. PMID:25062121

  10. Surface Defects on Natural MoS2.

    PubMed

    Addou, Rafik; Colombo, Luigi; Wallace, Robert M

    2015-06-10

    Transition metal dichalcogenides (TMDs) are being considered for a variety of electronic and optoelectronic devices such as beyond complementary metal-oxide-semiconductor (CMOS) switches, light-emitting diodes, solar cells, as well as sensors, among others. Molybdenum disulfide (MoS2) is the most studied of the TMDs in part because of its availability in the natural or geological form. The performance of most devices is strongly affected by the intrinsic defects in geological MoS2. Indeed, most sources of current transition metal dichalcogenides have defects, including many impurities. The variability in the electrical properties of MoS2 across the surface of the same crystal has been shown to be correlated with local variations in stoichiometry as well as metallic-like and structural defects. The presence of impurities has also been suggested to play a role in determining the Fermi level in MoS2. The main focus of this work is to highlight a number of intrinsic defects detected on natural, exfoliated MoS2 crystals from two different sources that have been often used in previous reports for device fabrication. We employed room temperature scanning tunneling microscopy (STM) and spectroscopy (STS), inductively coupled plasma mass spectrometry (ICPMS), as well as X-ray photoelectron spectroscopy (XPS) to study the pristine surface of MoS2(0001) immediately after exfoliation. ICPMS used to measure the concentration of impurity elements can in part explain the local contrast behavior observed in STM images. This work highlights that the high concentration of surface defects and impurity atoms may explain the variability observed in the electrical and physical characteristics of MoS2. PMID:25980312

  11. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures. PMID:26856789

  12. An advanced photovoltaic system simulator to demonstrate the performance of advanced photovoltaic cells and devices

    SciTech Connect

    Mrig, L.; DeBlasio, R.; O'Sullivan, G.A.; Tomko, R.P.

    1982-09-01

    This paper describes a photovoltaic system simulator for characterizing and evaluating the performance of advanced photovoltaic cells, modules, and arrays as well as for simulating the operation of advanced conceptual photovoltaic systems. The system simulator is capable of extrapolating the performance from a single laboratory cell, or of a module to power levels up to 10 kw. The major subsystems comprising the system simulator are Solar Array Simulator, Power Conditioning Unit, Load Controller and Resistive Load Unit, Data Acquisition and Control Unit, and Cell Test Bed. The system was designed and fabricated by Abacus Controls, Inc., Somerville, NJ, under subcontract to SERI, and has recently been installed (except the cell test bed) at SERI, where initial operation is taking place.

  13. Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

    NASA Astrophysics Data System (ADS)

    Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

    2014-11-01

    Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

  14. AN ADVANCED CALIBRATION PROCEDURE FOR COMPLEX IMPEDANCE SPECTRUM MEASUREMENTS OF ADVANCED ENERGY STORAGE DEVICES

    SciTech Connect

    William H. Morrison; Jon P. Christophersen; Patrick Bald; John L. Morrison

    2012-06-01

    With the increasing demand for electric and hybrid electric vehicles and the explosion in popularity of mobile and portable electronic devices such as laptops, cell phones, e-readers, tablet computers and the like, reliance on portable energy storage devices such as batteries has likewise increased. The concern for the availability of critical systems in turn drives the availability of battery systems and thus the need for accurate battery health monitoring has become paramount. Over the past decade the Idaho National Laboratory (INL), Montana Tech of the University of Montana (Tech), and Qualtech Systems, Inc. (QSI) have been developing the Smart Battery Status Monitor (SBSM), an integrated battery management system designed to monitor battery health, performance and degradation and use this knowledge for effective battery management and increased battery life. Key to the success of the SBSM is an in-situ impedance measurement system called the Impedance Measurement Box (IMB). One of the challenges encountered has been development of an accurate, simple, robust calibration process. This paper discusses the successful realization of this process.

  15. Synthesis of Large Scale MoS2 -Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    McCreary, Kathleen; Hanbicki, Aubrey; Friedman, Adam; Robinson, Jeremy; Jonker, Berend

    2014-03-01

    A rapidly progressing field involves the stacking of multiple two dimensional materials to form heterostructures. These heterosctructures have exhibited unique and interesting properties. For the most part, heterostructure devices are produced via mechanical exfoliation followed by careful aligning and stacking of the various components, limiting dimensions to micron-scale devices. Chemical vapor deposition (CVD) has proven to be a useful tool in the production of graphene and has very recently been investigated as a means for the growth of other 2D materials such as MoS2, hexagonal boron nitride and WS2. Using a two-step CVD process we are able to synthesize MoS2 on CVD grown graphene. AFM and Raman microscopy of the MoS2-graphene heterostructure show a uniform and continuous film on the cm scale.

  16. Recent advances in medical device triage technologies for chemical, biological, radiological, and nuclear events.

    PubMed

    Lansdowne, Krystal; Scully, Christopher G; Galeotti, Loriano; Schwartz, Suzanne; Marcozzi, David; Strauss, David G

    2015-06-01

    In 2010, the US Food and Drug Administration (Silver Spring, Maryland USA) created the Medical Countermeasures Initiative with the mission of development and promoting medical countermeasures that would be needed to protect the nation from identified, high-priority chemical, biological, radiological, or nuclear (CBRN) threats and emerging infectious diseases. The aim of this review was to promote regulatory science research of medical devices and to analyze how the devices can be employed in different CBRN scenarios. Triage in CBRN scenarios presents unique challenges for first responders because the effects of CBRN agents and the clinical presentations of casualties at each triage stage can vary. The uniqueness of a CBRN event can render standard patient monitoring medical device and conventional triage algorithms ineffective. Despite the challenges, there have been recent advances in CBRN triage technology that include: novel technologies; mobile medical applications ("medical apps") for CBRN disasters; electronic triage tags, such as eTriage; diagnostic field devices, such as the Joint Biological Agent Identification System; and decision support systems, such as the Chemical Hazards Emergency Medical Management Intelligent Syndromes Tool (CHEMM-IST). Further research and medical device validation can help to advance prehospital triage technology for CBRN events. PMID:25868677

  17. Plasma treatment introduced memory properties in MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Zhang, Miaomiao; Tong, Yanhong; Tang, Qingxin; Liu, Yichun

    2016-01-01

    We present a facile method to obtain MoS2-based nonvolatile memory field-effect transistors by oxygen plasma treatment on the MoS2 surface that is in contact with a dielectric. The oxygen plasma treatment provides a way of introducing deep defects into the MoS2 surface. Only those deep defects located at the semiconductor/dielectric interface can behave as charge trapping sites to develop the memory capability. No memory properties can be observed when the MoS2 surface far from the conductive channel was treated with oxygen plasma. This method brings promising advantages to MoS2-based memory devices obtained using a simple fabrication method and small device dimensions.

  18. A generic tight-binding model for monolayer, bilayer and bulk MoS2

    NASA Astrophysics Data System (ADS)

    Zahid, Ferdows; Liu, Lei; Zhu, Yu; Wang, Jian; Guo, Hong

    2013-05-01

    Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel material in field-effect transistors. In this work we determine the electronic structures of MoS2 with the highly accurate screened hybrid functional within the density functional theory (DFT) including the spin-orbit coupling. Using the DFT electronic structures as target, we have developed a single generic tight-binding (TB) model that accurately produces the electronic structures for three different forms of MoS2 - bulk, bilayer and monolayer. Our TB model is based on the Slater-Koster method with non-orthogonal sp3d5 orbitals, nearest-neighbor interactions and spin-orbit coupling. The TB model is useful for atomistic modeling of quantum transport in MoS2 based electronic devices.

  19. High frequency integrated MOS filters

    NASA Technical Reports Server (NTRS)

    Peterson, C.

    1990-01-01

    Several techniques exist for implementing integrated MOS filters. These techniques fit into the general categories of sampled and tuned continuous-time filters. Advantages and limitations of each approach are discussed. This paper focuses primarily on the high frequency capabilities of MOS integrated filters.

  20. High frequency MoS2 nanomechanical resonators.

    PubMed

    Lee, Jaesung; Wang, Zenghui; He, Keliang; Shan, Jie; Feng, Philip X-L

    2013-07-23

    Molybdenum disulfide (MoS2), a layered semiconducting material in transition metal dichalcogenides (TMDCs), as thin as a monolayer (consisting of a hexagonal plane of Mo atoms covalently bonded and sandwiched between two planes of S atoms, in a trigonal prismatic structure), has demonstrated unique properties and strong promises for emerging two-dimensional (2D) nanodevices. Here we report on the demonstration of movable and vibrating MoS2 nanodevices, where MoS2 diaphragms as thin as 6 nm (a stack of 9 monolayers) exhibit fundamental-mode nanomechanical resonances up to f0 ~ 60 MHz in the very high frequency (VHF) band, and frequency-quality (Q) factor products up to f0 × Q ~ 2 × 10(10)Hz, all at room temperature. The experimental results from many devices with a wide range of thicknesses and lateral sizes, in combination with theoretical analysis, quantitatively elucidate the elastic transition regimes in these ultrathin MoS2 nanomechanical resonators. We further delineate a roadmap for scaling MoS2 2D resonators and transducers toward microwave frequencies. This study also opens up possibilities for new classes of vibratory devices to exploit strain- and dynamics-engineered ultrathin semiconducting 2D crystals. PMID:23738924

  1. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    PubMed

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies. PMID:26779680

  2. MoS2 on an amorphous HfO2 surface: An ab initio investigation

    NASA Astrophysics Data System (ADS)

    Scopel, W. L.; Miwa, R. H.; Schmidt, T. M.; Venezuela, P.

    2015-05-01

    The energetic stability, electronic and structural properties of MoS2 adsorbed on an amorphous a-HfO2 surface (MoS2/HfO2) are examined through ab initio theoretical investigations. Our total energy results indicate that the formation of MoS2/HfO2 is an exothermic process with an adsorption energy of 34 meV/Å2, which means that it is more stable than similar systems like graphene/HfO2 and MoS2/SiO2. There are no chemical bonds at the MoS2-HfO2 interface. Upon formation of MoS2/HfO2, the electronic charge distribution is mostly localized at the interface region with no net charge transfer between the adsorbed MoS2 sheet and -HfO2 surface. However, the MoS2 sheet becomes n-type doped when there are oxygen vacancies in the HfO2 surface. Further investigation of the electronic distribution reveals that there are no electron- and hole-rich regions (electron-hole puddles) on the MoS2 sheet, which makes this system promising for use in high-speed nanoelectronic devices.

  3. A Facile Strategy for the Preparation of MoS3 and its Application as a Negative Electrode for Supercapacitors.

    PubMed

    Zhang, Tong; Kong, Ling-Bin; Dai, Yan-Hua; Yan, Kun; Shi, Ming; Liu, Mao-Cheng; Luo, Yong-Chun; Kang, Long

    2016-09-01

    Owing to their graphene-like structure and available oxidation valence states, transition metal sulfides are promising candidates for supercapacitors. Herein, we report the application of MoS3 as a new negative electrode for supercapacitors. MoS3 was fabricated by the facile thermal decomposition of a (NH4 )2 MoS4 precursor. For comparison, samples of MoS3 &MoS2 and MoS2 were also synthesized by using the same method. Moreover, this is the first report of the application of MoS3 as a negative electrode for supercapacitors. MoS3 displayed a high specific capacitance of 455.6 F g(-1) at a current density of 0.5 A g(-1) . The capacitance retention of the MoS3 electrode was 92 % after 1500 cycles, and even 71 % after 5000 cycles. In addition, an asymmetric supercapacitor assembly of MoS3 as the negative electrode demonstrated a high energy density at a high potential of 2.0 V in aqueous electrolyte. These notable results show that MoS3 has significant potential in energy-storage devices. PMID:27428557

  4. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

    NASA Astrophysics Data System (ADS)

    Chan, Mei Yin; Komatsu, Katsuyoshi; Li, Song-Lin; Xu, Yong; Darmawan, Peter; Kuramochi, Hiromi; Nakaharai, Shu; Aparecido-Ferreira, Alex; Watanabe, Kenji; Taniguchi, Takashi; Tsukagoshi, Kazuhito

    2013-09-01

    We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03220e

  5. Patterned Peeling 2D MoS2 off the Substrate.

    PubMed

    Zhao, Jing; Yu, Hua; Chen, Wei; Yang, Rong; Zhu, Jianqi; Liao, Mengzhou; Shi, Dongxia; Zhang, Guangyu

    2016-07-01

    The performance of two-dimensional (2D) MoS2 devices depends largely on the quality of the MoS2 itself. Existing fabrication process for 2D MoS2 relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS2 films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS2 and removes the MoS2 film contact with gold directly, leading to clean MoS2 pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm(2)/(V s) and on/off ratio ∼5.6 ± 3.6 × 10(6) were achieved. Such clean fabrication technique paves a way to high quality MoS2 devices for various electrical and optical applications. PMID:27314173

  6. Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

    NASA Astrophysics Data System (ADS)

    Radauscher, Erich Justin

    Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing

  7. Single-layer MoS2 electronics.

    PubMed

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  8. Reliability of Strength Testing using the Advanced Resistive Exercise Device and Free Weights

    NASA Technical Reports Server (NTRS)

    English, Kirk L.; Loehr, James A.; Laughlin, Mitzi A.; Lee, Stuart M. C.; Hagan, R. Donald

    2008-01-01

    The Advanced Resistive Exercise Device (ARED) was developed for use on the International Space Station as a countermeasure against muscle atrophy and decreased strength. This investigation examined the reliability of one-repetition maximum (1RM) strength testing using ARED and traditional free weight (FW) exercise. Methods: Six males (180.8 +/- 4.3 cm, 83.6 +/- 6.4 kg, 36 +/- 8 y, mean +/- SD) who had not engaged in resistive exercise for at least six months volunteered to participate in this project. Subjects completed four 1RM testing sessions each for FW and ARED (eight total sessions) using a balanced, randomized, crossover design. All testing using one device was completed before progressing to the other. During each session, 1RM was measured for the squat, heel raise, and deadlift exercises. Generalizability (G) and intraclass correlation coefficients (ICC) were calculated for each exercise on each device and were used to predict the number of sessions needed to obtain a reliable 1RM measurement (G . 0.90). Interclass reliability coefficients and Pearson's correlation coefficients (R) also were calculated for the highest 1RM value (1RM9sub peak)) obtained for each exercise on each device to quantify 1RM relationships between devices.

  9. Thermal Conductance at the 2D MoS2-hexagonal Boron Nitride Interface

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Hippalgaonkar, Kedar; Ong, Zhun Yong; Thong, John Tl; Qiu, Chengwei

    In recent years, a number of 2D heterostructure devices have emerged, including graphene/hexagonal boron nitride (h-BN), graphene/MoS2 and MoS2/ h-BN. Among them, MoS2/ h-BN field-effect transistors with MoS2 channels and h-BN dielectric have been reported to have higher carrier mobility and reduced hysteresis compared to MoS2 on SiO2. Despite relatively high in-plane thermal conductivity of MoS2 and h-BN, heat dissipation from these 2D devices is mainly limited by heat transfer in the vertical direction. Consequently, their operating temperatures are strongly influenced by the interface thermal conductance. In this work, we demonstrate the measurement of interface thermal conductance between MoS2 and h-BN. This is realized by electrically heating MoS2 and monitoring their temperatures through Raman spectroscopy. The obtained interface thermal conductance between MoS2 and h-BN is 1.77 MW/m2K, smaller than the reported value for the graphene/ h-BN interface, due to the weak coupling of phonon modes between MoS2 and h-BN based on our NEGF calculation. The low interface thermal conductance value suggests this interface is not favorable for heat dissipation, and should be considered carefully for the design of electronic and optoelectronic devices based on MoS2/ h-BN heterostructures.

  10. Band gap engineering of MoS2 upon compression

    NASA Astrophysics Data System (ADS)

    López-Suárez, Miquel; Neri, Igor; Rurali, Riccardo

    2016-04-01

    Molybdenum disulfide (MoS2) is a promising candidate for 2D nanoelectronic devices, which shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS2 upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally attainable strains (i.e., ±0.15). However, compressive strain can result in bucking that can prevent the use of large compressive strain. We then studied the stability of the compression, calculating the critical strain that results in the on-set of buckling for free-standing nanoribbons of different lengths. The results demonstrate that short structures, or few-layer MoS2, show semi-conductor to metal transition upon compressive strain without bucking.

  11. Tuning the hysteresis voltage in 2D multilayer MoS2 FETs

    NASA Astrophysics Data System (ADS)

    Jiang, Jie; Zheng, Zhouming; Guo, Junjie

    2016-10-01

    The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS2 transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS2 FET. This simple method for tuning the hysteresis voltage of MoS2 FET can make a significant step toward 2D nanoelectronic device applications.

  12. The use of hydrogenous material for sensitizing pMOS dosimeters to neutrons

    SciTech Connect

    Kronenberg, S.; Brucker, G.J.

    1995-02-01

    This paper is concerned with the application of PMOS dosimeters to measuring neutron dose by the use of hydrogenous materials to convert incident neutron flux to recoil protons. These latter charged particles can generate electron-hole pairs, and consequently, charge trapping takes place at the MOS interfaces, and threshold voltage shifts are produced. The use of PMOS devices for measuring gamma doses has been described extensively in the literature. Clearly, if measurable voltage shifts could be generated in a MOS device by neutrons, then a radiation detection instrument containing two MOS devices, back to back, with hydrogenous shields, and one MOS dosimeter without a converter would allow 4{pi} measurements of neutron and gamma doses to be made. The results obtained in this study indicate that paraffin or polyethylene will convert incident, 2.82 MeV neutrons to recoil protons, which subsequently cause measurable voltage shifts.

  13. Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

    NASA Astrophysics Data System (ADS)

    Island, Joshua O.; Steele, Gary A.; van der Zant, Herre S. J.; Castellanos-Gomez, Andres

    2016-09-01

    We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)—molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.

  14. Inversion layer MOS solar cells

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1986-01-01

    Inversion layer (IL) Metal Oxide Semiconductor (MOS) solar cells were fabricated. The fabrication technique and problems are discussed. A plan for modeling IL cells is presented. Future work in this area is addressed.

  15. Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2.

    PubMed

    Su, Weitao; Jin, Long; Qu, Xiaodan; Huo, Dexuan; Yang, Li

    2016-05-18

    Growing high quality monolayer MoS2 with strong photoluminescence (PL) is essential to produce light-emitting devices on the atomic scale. In this study we show that rhombic monolayer MoS2 with PL intensity 8 times stronger than those of chemical vapour deposition (CVD)-grown triangular and mechanically exfoliated (ME) monolayer MoS2 can be prepared by using CVD. Both Raman and PL measurements indicate low density of defects in rhombic monolayer MoS2 with enhanced PL intensity. Density functional theory (DFT) calculations show that passivation of defects in MoS2 removes trapping gap states, which may finally result in PL enhancement. PMID:27152375

  16. SPELEEM Studies on the Electronic Structure of MoS2/Graphene Heterostructure

    NASA Astrophysics Data System (ADS)

    Jin, Wencan; Yeh, Po-Chun; Zaki, Nader; Chenet, Daniel; Arefe, Ghidewon; Hao, Yufeng; Sala, Alessandro; Mentes, Tevfik; Locatelli, Andrea; Hone, James; Osgood, Richard; Columbia University Collaboration; Elettra Sincrotrone Trieste Collaboration

    2015-03-01

    Two-dimensional layered materials have been realized through the use of van der Waals heterostructures composed of weakly interacting layers. Among them, MoS2/graphene heterostructures can combine the advantages of high carrier mobility in graphene with the direct band gap of MoS2, which leads to potential applications in nanoelectronic devices with various functionalities. In this work, we study the influence of interlayer twist angle on the electronic structure of a MoS2/graphene heterostructure using Spectroscopic Photoemission and Low Energy Electron Microscopy (SPELEEM) system. MoS2/graphene heterostructures are prepared by transferring chemical-vapor-deposition (CVD)-grown monolayer MoS2 on top of CVD-grown graphene. Twist angles are characterized using the micro-LEED and the electronic structures are directly measured using micro-ARPES.

  17. Large-Area Epitaxial Monolayer MoS2

    PubMed Central

    2015-01-01

    Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. This is also confirmed by the relatively large and length-independent mobility in devices with a channel length reaching 80 μm. PMID:25843548

  18. Large-Area Epitaxial Monolayer MoS2.

    PubMed

    Dumcenco, Dumitru; Ovchinnikov, Dmitry; Marinov, Kolyo; Lazić, Predrag; Gibertini, Marco; Marzari, Nicola; Lopez Sanchez, Oriol; Kung, Yen-Cheng; Krasnozhon, Daria; Chen, Ming-Wei; Bertolazzi, Simone; Gillet, Philippe; Fontcuberta i Morral, Anna; Radenovic, Aleksandra; Kis, Andras

    2015-04-28

    Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. This is also confirmed by the relatively large and length-independent mobility in devices with a channel length reaching 80 μm. PMID:25843548

  19. In vitro retention of a new thermoplastic titratable mandibular advancement device

    PubMed Central

    Braem, Marc

    2015-01-01

    Oral appliance (OA) therapy with a mandibular advancement device (OAm) is a non-invasive, alternative approach to maintaining upper airway patency. The main requirement for an OAm to be effective is the adequate retention on the teeth while the patient is asleep. We evaluated the retentive forces of a new low-cost, customizable, titratable, thermoplastic OAm (BluePro ®; BlueSom, France). Dental impressions and casts were made for one patient with complete upper and lower dental arches including the third molars and class II bite proportions. A setup based on Frasaco ANA-4 models was also used. Two protrusive positions of the mandible were investigated: 3 mm and 8 mm, representing respectively 25% and 65% of the maximal protrusion. The forces required to remove the BluePro ® device from the carriers were recorded continuously over 730 cycles (=365 days, twice a day) to simulate 1 year of clinical use. At 8 mm protrusion the BluePro ® device showed retentive forces of ~27N. There was a slight but non-significant decrease in retentive forces in the tests on the epoxified carriers which was not found on the ANA-4 carriers. There were no significant differences between the carriers as a function of protrusion. The BluePro ® device tested in the present study possesses sufficient retention forces to resist initial jaw opening forces and full mouth opening forces estimated to be ~20N. It could therefore broaden the indications for use of thermoplastic OAms. It could provide a temporary OAm while a custom-made OAm is being manufactured or repaired. Patients could be provided with a low-cost try-out device capable of reliable titration, providing an indication of effectiveness and of patient acceptance of an OAm, although the effect of device shape and size on therapeutic outcome is not yet known. Finally it could provide an affordable OAm solution in resource-restricted healthcare settings. PMID:25901281

  20. Further measurements of bremsstrahlung from the insertion device beamlines of the Advanced Photon Source.

    SciTech Connect

    Job, P. K.

    1998-09-16

    Bremsstrahlung is produced in the Advanced Photon Source (APS) storage ring when the positron beam interacts with the storage-ring components or with the residual gas molecules in the storage-ring vacuum. The interaction of the positrons with the gas molecules occurs continually during storage ring operation. Bremsstrahlung is important at the insertion device straight sections because the contribution from each interaction adds up to produce a narrow mono-directional beam that travel down the beamlines. At the APS, with long storage ring beam straight paths (15.38 meters), gas bremsstrahlung in the insertion device beamlines can be significant. The preliminary results of the bremsstrahlung measurements in the insertion device beamlines of the APS was presented at SATIF3. This paper presents the results of further measurements at the two insertion device (ID) beamlines with higher statistics in the data collection. The beam current and the vacuum normalized bremsstrahlung power is fairly constant in a beamline for a given storage ring fill pattern, but may vary from beamline to beamline. The average bremsstrahlung power is measured as 118 {+-} 9 GeV/s/nT/mA at beamline 11 ID and as 36 {+-} 2 GeV/s/nT/mA at beamline 6 ID. These results, along with the results from the four previous independent bremsstrahlung measurements, enabled us to conclude upon the various reasons causing this variation.

  1. Advanced simulation technology for etching process design for CMOS device applications

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki; Fukasawa, Masanaga; Tatsumi, Tetsuya

    2016-07-01

    Plasma etching is a critical process for the realization of high performance in the next generation of CMOS devices. To predict and control fluctuations in the etching properties accurately during mass production, it is essential that etching process simulation technology considers fluctuations in the plasma chamber wall conditions, the effects of by-products on the critical dimensions, the Si recess dependence on the wafer open area ratio and local pattern structure, and the time-dependent plasma-induced damage distribution associated with the three-dimensional feature scale profile at the 100 nm level. This consideration can overcome the issues with conventional simulations performed under the assumed ideal conditions, which are not accurate enough for practical process design. In this article, these advanced process simulation technologies are reviewed, and, from the results of suitable process simulations, a new etching system that automatically controls the etching properties is proposed to enable stable CMOS device fabrication with high yields.

  2. Left ventricular assist device driveline infections: recent advances and future goals

    PubMed Central

    2015-01-01

    Left ventricular assist devices (LVADs) have revolutionized the treatment of advanced heart failure, but infection remains a substantial risk. LVAD driveline infections (DLIs) are the most common type of LVAD-associated infection (LVADI). In the past several years we have expanded our understanding of DLI epidemiology, standardized the definition of LVADIs, improved infection rates through changes in implantation techniques, and investigated potential new modalities for DLI diagnosis. However, significant challenges remain for optimizing DLI prevention and treatment. These challenges include standardizing and improving both empiric and targeted antimicrobial therapy, expanding our understanding of effective driveline exit site dressings and topical therapies, and defining the patient population that benefits from device exchange and transplant. Additionally, in an era of expanding antibiotic resistance we need to continue investigating novel, non-antibiotic therapies for prevention and treatment of DLIs. PMID:26793335

  3. Monolayer MoS2 self-switching diodes

    NASA Astrophysics Data System (ADS)

    Al-Dirini, Feras; Hossain, Faruque M.; Mohammed, Mahmood A.; Hossain, Md Sharafat; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2016-01-01

    This paper presents a new molybdenum disulphide (MoS2) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS2 monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS2 results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

  4. Development of the Vibration Isolation System for the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Niebuhr, Jason H.; Hagen, Richard A.

    2011-01-01

    This paper describes the development of the Vibration Isolation System for the Advanced Resistive Exercise Device from conceptual design to lessons learned. Maintaining a micro-g environment on the International Space Station requires that experiment racks and major vibration sources be isolated. The challenge in characterizing exercise loads and testing the system in the presence of gravity led to a decision to qualify the system by analysis. Available data suggests that the system is successful in attenuating loads, yet there has been a major component failure and several procedural issues during its 3 years of operational use.

  5. Computational Models of Exercise on the Advanced Resistance Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Newby, Nate; Caldwell, Erin; Scott-Pandorf, Melissa; Peters,Brian; Fincke, Renita; DeWitt, John; Poutz-Snyder, Lori

    2011-01-01

    Muscle and bone loss remain a concern for crew returning from space flight. The advanced resistance exercise device (ARED) is used for on-orbit resistance exercise to help mitigate these losses. However, characterization of how the ARED loads the body in microgravity has yet to be determined. Computational models allow us to analyze ARED exercise in both 1G and 0G environments. To this end, biomechanical models of the squat, single-leg squat, and deadlift exercise on the ARED have been developed to further investigate bone and muscle forces resulting from the exercises.

  6. [Objective surgery -- advanced robotic devices and simulators used for surgical skill assessment].

    PubMed

    Suhánszki, Norbert; Haidegger, Tamás

    2014-12-01

    Robotic assistance became a leading trend in minimally invasive surgery, which is based on the global success of laparoscopic surgery. Manual laparoscopy requires advanced skills and capabilities, which is acquired through tedious learning procedure, while da Vinci type surgical systems offer intuitive control and advanced ergonomics. Nevertheless, in either case, the key issue is to be able to assess objectively the surgeons' skills and capabilities. Robotic devices offer radically new way to collect data during surgical procedures, opening the space for new ways of skill parameterization. This may be revolutionary in MIS training, given the new and objective surgical curriculum and examination methods. The article reviews currently developed skill assessment techniques for robotic surgery and simulators, thoroughly inspecting their validation procedure and utility. In the coming years, these methods will become the mainstream of Western surgical education. PMID:25500641

  7. Red-Shift Effect and Sensitive Responsivity of MoS2/ZnO Flexible Photodetectors.

    PubMed

    Hsiao, Yu-Jen; Fang, Te-Hua; Ji, Liang-Wen; Yang, Bo-Yi

    2015-12-01

    The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively. The responsivity of MoS2/ZnO increased, and the wavelength was red-shifted. PMID:26573934

  8. Effect of MoO3 constituents on the growth of MoS2 nanosheets by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xuan; Zhang, Yong Ping; Qian Chen, Zhi

    2016-06-01

    The highly crystalline and uniform MoS2 film was grown on Si substrate by a low-pressure chemical vapor deposition method using S and MoO3 as precursors at an elevated temperature. The structures and properties of MoS2 nanosheets vary greatly with the content of MoO3 constituents in the films. The nanostructured MoS2 film exhibits strong photoluminescence in the visible range. This work may provide a pathway to synthesizing MoS2 nanosheets and facilitate the development of applicable devices.

  9. Atomic-layer soft plasma etching of MoS2.

    PubMed

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  10. Atomic-layer soft plasma etching of MoS2

    PubMed Central

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  11. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGESBeta

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; et al

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  12. Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors

    PubMed Central

    Wu, Yueh-Chun; Liu, Cheng-Hua; Chen, Shao-Yu; Shih, Fu-Yu; Ho, Po-Hsun; Chen, Chun-Wei; Liang, Chi-Te; Wang, Wei-Hua

    2015-01-01

    Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future. PMID:26112341

  13. Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Wu, Yueh-Chun; Liu, Cheng-Hua; Chen, Shao-Yu; Shih, Fu-Yu; Ho, Po-Hsun; Chen, Chun-Wei; Liang, Chi-Te; Wang, Wei-Hua

    2015-06-01

    Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future.

  14. Atomic-layer soft plasma etching of MoS2

    NASA Astrophysics Data System (ADS)

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  15. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

    PubMed Central

    Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing

    2016-01-01

    Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency. PMID:26928583

  16. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

    NASA Astrophysics Data System (ADS)

    Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing

    2016-03-01

    Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

  17. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.

    PubMed

    Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing

    2016-01-01

    Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency. PMID:26928583

  18. Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

    SciTech Connect

    Sukharev, V.; Kteyan, A.; Choy, J.-H.; Hovsepyan, H.; Markosian, A.; Zschech, E.; Huebner, R.

    2011-11-10

    Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D through-silicon-via (TSV) based technologies are outlined. The paper addresses the growing need in a simulation-based design verification flow capable to analyze a design of 3D IC stacks and to determine across-die out-of-spec variations in device electrical characteristics caused by the layout and through-silicon-via (TSV)/package-induced mechanical stress. The limited characterization/measurement capabilities for 3D IC stacks and a strict ''good die'' requirement make this type of analysis critical for the achievement of an acceptable level of functional and parametric yield and reliability. The paper focuses on the development of a design-for-manufacturability (DFM) type of methodology for managing mechanical stresses during a sequence of designs of 3D TSV-based dies, stacks and packages. A set of physics-based compact models for a multi-scale simulation to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D TSV technology is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics of the test-chip devices is presented. A strategy for generation of a simulation feeding data and respective materials characterization approach are proposed, with the goal to generate a database for multi-scale material parameters of wafer-level and package-level structures. For model validation, high-resolution strain measurements in Si channels of the test-chip devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm strain measurements so far.

  19. Layer-by-layer self-assembly of polyelectrolyte functionalized MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Shen, Jianfeng; Pei, Yu; Dong, Pei; Ji, Jin; Cui, Zheng; Yuan, Junhua; Baines, Robert; Ajayan, Pulickel M.; Ye, Mingxin

    2016-05-01

    Few-layered polyelectrolyte functionalized MoS2 nanosheets were obtained for the first time through in situ polymerization of MoS2 nanosheets with poly(acrylic acid) and poly(acrylamide), both of which demonstrated excellent dispersibility and stability in water. After designing and optimizing the components of this series of polyelectrolyte functionalized MoS2 nanosheets, by exploiting the electrostatic interactions present in the modified MoS2 nanosheets, we further created a series of layer-by-layer (LBL) self-assembling MoS2-based films. To this end, uniform MoS2 nanosheet-based LBL films were precisely deposited on substrates such as quartz, silicon, and ITO. The polyelectrolyte functionalized MoS2 nanosheet assembled LBL film-modified electrodes demonstrated enhanced electrocatalytic activity for H2O2. As such, they are conducive to efficient sensors and advanced biosensing systems.Few-layered polyelectrolyte functionalized MoS2 nanosheets were obtained for the first time through in situ polymerization of MoS2 nanosheets with poly(acrylic acid) and poly(acrylamide), both of which demonstrated excellent dispersibility and stability in water. After designing and optimizing the components of this series of polyelectrolyte functionalized MoS2 nanosheets, by exploiting the electrostatic interactions present in the modified MoS2 nanosheets, we further created a series of layer-by-layer (LBL) self-assembling MoS2-based films. To this end, uniform MoS2 nanosheet-based LBL films were precisely deposited on substrates such as quartz, silicon, and ITO. The polyelectrolyte functionalized MoS2 nanosheet assembled LBL film-modified electrodes demonstrated enhanced electrocatalytic activity for H2O2. As such, they are conducive to efficient sensors and advanced biosensing systems. Electronic supplementary information (ESI) available: SEM, AFM and TEM characterization of PAA-MoS2 and PAM-MoS2 nanocomposites. More characterization and electrochemical properties of LBL films

  20. Thermal transport in MoS2/Graphene hybrid nanosheets.

    PubMed

    Zhang, Zhongwei; Xie, Yuee; Peng, Qing; Chen, Yuanping

    2015-09-18

    Heat dissipation is a very critical problem for designing nano-functional devices, including MoS2/graphene heterojunctions. In this paper we investigate thermal transport in MoS2/graphene hybrid nanosheets under various heating conditions, by using molecular dynamics simulation. Diverse transport processes and characteristics, depending on the conducting layers, are found in these structures. The thermal conductivities can be tuned by interlayer coupling, environment temperature, and interlayer overlap. The highest thermal conductivity at room temperature is achieved as more than 5 times of that of single-layer MoS2 when both layers are heated and 100% overlapped. Different transport mechanisms in the hybrid nanosheets are explained by phonon density of states, temperature distribution, and interlayer thermal resistance. Our results could not only provide clues to master the heat transport in functional devices based on MoS2/graphene heterojunctions, but are also useful for analyzing thermal transport in other van der Waals hybrid nanosheets. PMID:26313739

  1. Single-layer MoS2 transistors.

    PubMed

    Radisavljevic, B; Radenovic, A; Brivio, J; Giacometti, V; Kis, A

    2011-03-01

    Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting. PMID:21278752

  2. Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains.

    PubMed

    Hao, Song; Yang, Bingchu; Gao, Yongli

    2016-08-28

    The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS2 single crystals. The thickness of triangle and polygon shape MoS2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS2-based devices. PMID:27586938

  3. Effect of precursor on growth and morphology of MoS2 monolayer and multilayer

    NASA Astrophysics Data System (ADS)

    Ganorkar, Shraddha; Kim, Jungyoon; Kim, Young-Hwan; Kim, Seong-II

    2015-12-01

    The rise of two-dimensional (2D) material is one of the results of successful efforts of researchers which laid the path to the new era of electronics. One of the most exciting materials is MoS2. Synthesis has been always a major issue as electronic devices need reproducibility along with similar properties for mass productions. Chemical vapor deposition (CVD) is one of the successful methods for 2D materials including graphene. Furthermore, the choice of starting materials for Mo and S source is crucial. The different source has different effects on the layers and morphology of MoS2 films. In this work, we have extensively studied the CVD technique to grow few layers of MoS2 with two precursors MoO3 and MoCl5, show remarkable changes. The MoO3 source gives a triangular shaped MoS2 monolayer while that of MoCl5 can achieve uniform MoS2 without triangle. The absence of geometric shapes with MoCl5 is poorly understood. We tried to explain with MoCl5 precursor, the formation of continuous monolayer of MoS2 without any triangle on the basis of chemical reaction formalism mostly due to one step reaction process and formation of MoS2 from gas phase to the solid phase. The film synthesized by MoCl5 is more continuous and it would be a good choice for device applications.

  4. Towards the Intrinsic Limit in As-Exfoliated MoS2

    NASA Astrophysics Data System (ADS)

    Sutton, Erin; George, Edward; Whapham, Emily; Burch, Kenneth; Burch Group Team

    In recent years, two-dimensional transition metal dichalcogenide (TMDC) semiconductors have been intensively studied as exciting non-zero band gap analogs to graphene. For example, molybdenum disulfide (MoS2), a TMDC, is a van der Waals material which can be thinned down to single atomic layers less than a nanometer thick via micro-mechanical cleavage. In this regime, quantum confinement effects give rise to properties not seen in the bulk crystal. The attractive properties of ultrathin MoS2 have inspired myriad applications, including spin- and valley-tronics, and LED and photo-detecting devices. As the performance of these devices is optimized, a method of modulating these properties is strongly desired. Through exfoliating MoS2 on various substrates in an inert glovebox environment, we have produced as-exfoliated MoS2 doped at the intrinsic level. We study the changes in the MoS2 via Raman and photoluminescence spectra and see shifts in excitonic behavior. The ability to create intrinsic MoS2 without the need for chemical doping or gating has exciting implications for optical studies of the material in addition to device applications such as photovoltaic, photocatalytic, and LED devices.

  5. Recent advances in computational methodology for simulation of mechanical circulatory assist devices

    PubMed Central

    Marsden, Alison L.; Bazilevs, Yuri; Long, Christopher C.; Behr, Marek

    2014-01-01

    Ventricular assist devices (VADs) provide mechanical circulatory support to offload the work of one or both ventricles during heart failure. They are used in the clinical setting as destination therapy, as bridge to transplant, or more recently as bridge to recovery to allow for myocardial remodeling. Recent developments in computational simulation allow for detailed assessment of VAD hemodynamics for device design and optimization for both children and adults. Here, we provide a focused review of the recent literature on finite element methods and optimization for VAD simulations. As VAD designs typically fall into two categories, pulsatile and continuous flow devices, we separately address computational challenges of both types of designs, and the interaction with the circulatory system with three representative case studies. In particular, we focus on recent advancements in finite element methodology that has increased the fidelity of VAD simulations. We outline key challenges, which extend to the incorporation of biological response such as thrombosis and hemolysis, as well as shape optimization methods and challenges in computational methodology. PMID:24449607

  6. Advanced Multi-Junction Photovoltaic Device Optimization For High Temperature Space Applications

    NASA Astrophysics Data System (ADS)

    Sherif, Michael

    2011-10-01

    Almost all solar cells available today for space or terrestrial applications are optimized for low temperature or "room temperature" operations, where cell performances demonstrate favourable efficiency figures. The fact is in many space applications, as well as when using solar concentrators, operating cell temperature are typically highly elevated, where cells outputs are severely depreciated. In this paper, a novel approach for the optimization of multi-junction photovoltaic devices at such high expected operating temperature is presented. The device optimization is carried out on the novel cell physical model previously developed at the Naval Postgraduate School using the SILVACO software tools [1]. Taking into account the high cost of research and experimentation involved with the development of advanced cells, this successful modelling technique was introduced and detailed results were previously presented by the author [2]. The flexibility of the proposed methodology is demonstrated and example results are shown throughout the whole process. The research demonstrated the capability of developing a realistic model of any type of solar cell, as well as thermo-photovoltaic devices. Details of an example model of an InGaP/GaAs/Ge multi-junction cell was prepared and fully simulated. The major stages of the process are explained and the simulation results are compared to published experimental data. An example of cell parameters optimization for high operating temperature is also presented. Individual junction layer optimization was accomplished through the use of a genetic search algorithm implemented in Matlab.

  7. Mechanism Development, Testing, and Lessons Learned for the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Lamoreaux, Christopher D.; Landeck, Mark E.

    2006-01-01

    The Advanced Resistive Exercise Device (ARED) has been developed at NASA Johnson Space Center, for the International Space Station (ISS) program. ARED is a multi-exercise, high-load resistive exercise device, designed for long duration, human space missions. ARED will enable astronauts to effectively maintain their muscle strength and bone mass in the micro-gravity environment more effectively than any other existing devices. ARED's resistance is provided via two, 20.3 cm (8 in) diameter vacuum cylinders, which provide a nearly constant resistance source. ARED also has a means to simulate the inertia that is felt during a 1-G exercise routine via the flywheel subassembly, which is directly tied to the motion of the ARED cylinders. ARED is scheduled to fly on flight ULF 2 to the ISS and will be located in Node 1. Presently, ARED is in the middle of its qualification and acceptance test program. An extensive testing program and engineering evaluation has increased the reliability of ARED by bringing potential design issues to light before flight production. Some of those design issues, resolutions, and design details will be discussed in this paper.

  8. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE PAGESBeta

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  9. Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2.

    PubMed

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M; Xie, Ya-Hong

    2015-12-22

    Prominent resonance Raman and photoluminescence spectroscopic differences between AA' and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom will be discussed. PMID:26536495

  10. Transferred large area single crystal MoS2 field effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Choong Hee; McCulloch, William; Lee, Edwin W.; Ma, Lu; Krishnamoorthy, Sriram; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

    2015-11-01

    Transfer of epitaxial, two-dimensional (2D) MoS2 on sapphire grown via synthetic approaches is a prerequisite for practical device applications. We report centimeter-scale, single crystal, synthesized MoS2 field effect transistors (FETs) transferred onto SiO2/Si substrates, with a field-effect mobility of 4.5 cm2 V-1 s-1, which is among the highest mobility values reported for the transferred large-area MoS2 transistors. We demonstrate simple and clean transfer of large-area MoS2 films using deionized water, which can effectively avoid chemical contamination. The transfer method reported here allows standard i-line stepper lithography process to realize multiple devices over the entire film area.

  11. Development of a High Fidelity Dynamic Module of the Advanced Resistive Exercise Device (ARED) Using Adams

    NASA Technical Reports Server (NTRS)

    Humphreys, B. T.; Thompson, W. K.; Lewandowski, B. E.; Cadwell, E. E.; Newby, N. J.; Fincke, R. S.; Sheehan, C.; Mulugeta, L.

    2012-01-01

    NASA's Digital Astronaut Project (DAP) implements well-vetted computational models to predict and assess spaceflight health and performance risks, and enhance countermeasure development. DAP provides expertise and computation tools to its research customers for model development, integration, or analysis. DAP is currently supporting the NASA Exercise Physiology and Countermeasures (ExPC) project by integrating their biomechanical models of specific exercise movements with dynamic models of the devices on which the exercises were performed. This presentation focuses on the development of a high fidelity dynamic module of the Advanced Resistive Exercise Device (ARED) on board the ISS. The ARED module, illustrated in the figure below, was developed using the Adams (MSC Santa Ana, California) simulation package. The Adams package provides the capabilities to perform multi rigid body, flexible body, and mixed dynamic analyses of complex mechanisms. These capabilities were applied to accurately simulate: Inertial and mass properties of the device such as the vibration isolation system (VIS) effects and other ARED components, Non-linear joint friction effects, The gas law dynamics of the vacuum cylinders and VIS components using custom written differential state equations, The ARED flywheel dynamics, including torque limiting clutch. Design data from the JSC ARED Engineering team was utilized in developing the model. This included solid modeling geometry files, component/system specifications, engineering reports and available data sets. The Adams ARED module is importable into LifeMOD (Life Modeler, Inc., San Clemente, CA) for biomechanical analyses of different resistive exercises such as squat and dead-lift. Using motion capture data from ground test subjects, the ExPC developed biomechanical exercise models in LifeMOD. The Adams ARED device module was then integrated with the exercise subject model into one integrated dynamic model. This presentation will describe the

  12. Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2

    NASA Astrophysics Data System (ADS)

    Ishihara, Seiya; Hibino, Yusuke; Sawamoto, Naomi; Suda, Kohei; Ohashi, Takumi; Matsuura, Kentarou; Machida, Hideaki; Ishikawa, Masato; Sudoh, Hiroshi; Wakabayashi, Hitoshi; Ogura, Atsushi

    2016-04-01

    A sputtered MoS2 thin film is a candidate for realizing enhancement-mode MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). However, there are some sulfur vacancies in the film, which degrade the device performance. In this study, we performed postdeposition sulfurization annealing (PSA) on a sputtered MoS2 thin film in order to complement sulfur vacancies, and we investigated the fundamental properties of the MoS2 film. As a result, a high-quality crystalline 10-layer MoS2 film with an ideal stoichiometric composition was obtained at a relatively low process temperature (500 °C). The MoS2 film had an indirect bandgap of 1.36 eV and a high Hall mobility compared with the as-deposited sputtered MoS2 film.

  13. Laser-Induced Particle Adsorption on Atomically Thin MoS2.

    PubMed

    Tran Khac, Bien Cuong; Jeon, Ki-Joon; Choi, Seung Tae; Kim, Yong Soo; DelRio, Frank W; Chung, Koo-Hyun

    2016-02-10

    Atomically thin molybdenum disulfide (MoS2) shows great potential for use in nanodevices because of its remarkable electronic, optoelectronic, and mechanical properties. These material properties are often dependent on the thickness or the number of layers, and hence Raman spectroscopy is widely used to characterize the thickness of atomically thin MoS2 due to the sensitivity of the vibrational spectrum to thickness. However, the lasers used in Raman spectroscopy can increase the local surface temperature and eventually damage the upper layers of the MoS2, thereby changing the aforementioned material properties. In this work, the effects of lasers on the topography and material properties of atomically thin MoS2 were systematically investigated using Raman spectroscopy and atomic force microscopy. In detail, friction force microscopy was used to study the friction characteristics of atomically thin MoS2 as a function of laser powers from 0.5 to 20 mW and number of layers from 1 to 3. It was found that particles formed on the top surface of the atomically thin MoS2 due to laser-induced thermal effects. The degree of particle formation increased as the laser power increased, prior to the thinning of the atomically thin MoS2. In addition, the degree of particle formation increased as the number of MoS2 layers increased, which suggests that the thermal behavior of the supported MoS2 may differ depending on the number of layers. The particles likely originated from the atmosphere due to laser-induced heating, but could be eliminated via appropriate laser powers and exposure times, which were determined experimentally. The outcomes of this work indicate that thermal management is crucial in the design of reliable nanoscale devices based on atomically thin MoS2. PMID:26795729

  14. RKKY interaction in MoS2

    NASA Astrophysics Data System (ADS)

    Mastrogiuseppe, Diego; Sandler, Nancy; Ulloa, Sergio

    2014-03-01

    MoS2 belongs to a family of layered compounds -the transition metal dichalcogenides- that are attracting increasing attention in the solid state community due to their very rich phase diagram. In particular, the semiconducting ones in their 2D form, are of particular interest in the search for a new generation of devices in nanoelectronics and nanophotonics. The hexagonal lattice allows one to describe the low-energy physics with a massive Dirac equation around the K and K' points. Moreover, the presence of a large intrinsic spin-orbit interaction due to the presence of transition metal atoms, leads to a valley-dependent splitting of the states of an otherwise spin-degenerate valence spectrum. We study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two magnetic impurities in the direct band gap semiconducting single-layer MoS2, focusing in the p-doped case. Going beyond a recent study, we include the effects of the spin-degenerate valence bands at the center of the Brillouin zone, relevant for energies close to the valence band maximum. The easy experimental tunability of the carrier concentration by electrical or chemical means, makes possible the study of the carrier-mediated spin-spin interaction at different fillings. Supported by NSF-MWN/CIAM and NSF-PIRE.

  15. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    PubMed

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials. PMID:26083310

  16. The effects of insertion devices on beam dynamics in the ALS (Advanced Light Source)

    SciTech Connect

    Jackson, A.; Forest, E.; Nishimura, H.; Zisman, M.S.

    1989-03-01

    Third generation synchrotron radiation sources, such as the Advanced Light Source (ALS), are specifically designed to operate with long undulators that produce very high brightness beams of synchrotron radiation. Including such devices in the storage ring magnet lattice introduced extra linear and nonlinear fields that are intrinsic to the undulator. These fields break the symmetry of the lattice and provide driving forces for nonlinear resonances, thereby perturbing the dynamics of the electron motion, particularly at large amplitudes. The main impact of these perturbations is on the beam lifetime, arising out of a reduction of both the transverse acceptance and the momentum acceptance. In this paper, we present the results of an ongoing study of these effects as they relate to the performance of the ALS. 7 refs., 7 figs., 2 tabs.

  17. New chicane magnet design for insertion device straights at the Advanced Light Source

    SciTech Connect

    Marks, Steve; Schlueter, Ross; Anderson, David; Gath, William; Jung, Jin-Young; Robin, David; Steier, Christoph; Stevens, Troy

    2001-12-10

    A chicane magnet incorporating counter-rotating permanent magnet pairs together with trim coils has been designed for use in the Advanced Light Source (ALS) straights in conjunction with two insertion devices. In particular, this design is being developed for use in the existing beam line (BL) 4 elliptically polarizing undulator (EPU) straight and in the BL11 EPU straight, currently under design and construction. The purpose of the chicane is to provide a fixed angular separation between two successive EPU photon fans, and to correct steering perturbations resulting from EPU polarization state changes. Polarization changes occur on the time scale of one second; associated steering corrections must be accomplished in less than a second. Hysteresis associated with conventional iron core electromagnets prevents fast steering correction to the required precision. This consideration motivated the iron-free design presented here.

  18. Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing

    NASA Astrophysics Data System (ADS)

    Maillot, P.; Martin, C.; Planchais, A.

    2011-11-01

    The detrimental effects of metallic on certain key electrical parameters of silicon devices mandates the use of state-of-the-art characterization and metrology tools as well as appropriate control plans. Historically, this has been commonly achieved in-line on monitor wafers through a combination of Total Reflectance X-Ray Fluorescence (TXRF) and post anneal Surface Photo Voltage (SPV). On the other hand, VPD (Vapor Phase Decomposition) combined with ICP-MS (Inductively Coupled Mass Spectrometry) or TXRF is known to provide both identification and quantification of surface trace metals at lower detection limits. Based on these considerations the description of an advanced monitoring scheme using SPV, TXRF and automated VPD ICP-MS is described.

  19. Analysis of insertion device magnet measurements for the Advanced Light Source

    SciTech Connect

    Marks, S.; Humphries, D.; Kincaid, B.M.; Schlueter, R.; Wang, C.

    1993-07-01

    The Advanced Light Source (ALS), which is currently being commissioned at Lawrence Berkeley Laboratory, is a third generation light source designed to produce XUV radiation of unprecedented brightness. To meet the high brightness goal the storage ring has been designed for very small electron beam emittance and the undulators installed in the ALS are built to a high degree of precision. The allowable magnetic field errors are driven by electron beam and radiation requirements. Detailed magnetic measurements and adjustments are performed on each undulator to qualify it for installation in the ALS. The first two ALS undulators, IDA and IDB, have been installed. This paper describes the program of measurements, data analysis, and adjustments carried out for these two devices. Calculations of the radiation spectrum, based upon magnetic measurements, are included. Final field integral distributions are also shown. Good field integral uniformity has been achieved using a novel correction scheme, which is also described.

  20. The role of MoS2 as an interfacial layer in graphene/silicon solar cells.

    PubMed

    Jiao, Kejia; Duan, Chunyang; Wu, Xiaofeng; Chen, Jiayuan; Wang, Yu; Chen, Yunfa

    2015-03-28

    The role of MoS2 as an effective interfacial layer in graphene/silicon solar cells is systematically investigated by varying MoS2 film annealing temperature and thickness. It is found that the power conversion efficiency (PCE) is increased by ∼100% from ∼2.3% to ∼4.4% with 80 °C annealed MoS2 film whereas it drops significantly to ∼0.6% with 200 °C annealed MoS2 film. The results are well explained based on the device energy band diagram. That is, the incorporation of MoS2(80) films leads to the formation of type II structure, facilitating hole transport; while valence band mismatch is formed with MoS2(200) films due to the increase in the work function of MoS2. Besides, the PCE increases gradually with decreasing MoS2 film thickness, and "saturates" at about 2 nm. The PCE can be further enhanced to ∼6.6% with the aid of silicon surface passivation. Our work demonstrates that MoS2 is an excellent interfacial layer to improve the PCE with low-temperature annealing (80 °C in air), which may be helpful in developing efficient and low-cost G/Si solar cells. PMID:25728709

  1. MoS2 Heterojunctions by Thickness Modulation.

    PubMed

    Tosun, Mahmut; Fu, Deyi; Desai, Sujay B; Ko, Changhyun; Kang, Jeong Seuk; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

    2015-01-01

    In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices. PMID:26121940

  2. MoS2 Heterojunctions by Thickness Modulation

    PubMed Central

    Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

    2015-01-01

    In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices. PMID:26121940

  3. MoS2 Heterojunctions by Thickness Modulation

    DOE PAGESBeta

    Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

    2015-06-30

    In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignment andmore » photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.« less

  4. Spectral characteristics of insertion device sources at the Advanced Photon Source

    SciTech Connect

    Viccaro, P.J.

    1990-01-01

    The 7-GeV Advanced Photon Source (APS) synchrotron facility at Argonne National Laboratory will be a powerful source of hard x-rays with energies above 1 keV. In addition to the availability of bending magnet radiation, the storage ring will have 35 straight sections for insertion device (ID) x-ray sources. The unique spectral properties and flexibility of these devices open new possibilities for scientific research in essentially every area of science and technology. Existing and new techniques utilizing the full potential of these sources, such as the enhanced coherence, unique polarization properties, and high spectral brilliance, will permit experiments not possible with existing sources. In the following presentation, the spectral properties of ID sources are briefly reviewed. A summary of the specific properties of sources planned for the APS storage ring is then presented. Recent results for APS prototype ID sources are discussed, and finally some special x-ray sources under consideration for the APS facility are described. 9 refs.

  5. Optically tuned terahertz modulator based on annealed multilayer MoS2

    PubMed Central

    Cao, Yapeng; Gan, Sheng; Geng, Zhaoxin; Liu, Jian; Yang, Yuping; Bao, Qiaoling; Chen, Hongda

    2016-01-01

    Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch. PMID:26953153

  6. Optically tuned terahertz modulator based on annealed multilayer MoS2.

    PubMed

    Cao, Yapeng; Gan, Sheng; Geng, Zhaoxin; Liu, Jian; Yang, Yuping; Bao, Qiaoling; Chen, Hongda

    2016-01-01

    Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch. PMID:26953153

  7. Optoelectrical Molybdenum Disulfide (MoS2)--Ferroelectric Memories.

    PubMed

    Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei; Sinitskii, Alexander

    2015-08-25

    In this study, we fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS2) on a lead zirconium titanate (Pb(Zr,Ti)O3, PZT) substrate that was used as a gate dielectric. MoS2-PZT FETs exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that the interplay of polarization and interfacial phenomena strongly affects the electronic behavior and memory characteristics of MoS2-PZT FETs. We further demonstrate that MoS2-PZT memories have a number of advantages and unique features compared to their graphene-based counterparts as well as commercial ferroelectric random-access memories (FeRAMs), such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically. This dual optoelectrical operation of these memories can simplify the device architecture and offer additional practical functionalities, such as an instant optical erase of large data arrays that is unavailable for many conventional memories. PMID:26222209

  8. Extraordinary attributes of 2-dimensional MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Rao, C. N. R.; Maitra, Urmimala; Waghmare, Umesh V.

    2014-08-01

    The discovery of the amazing properties of graphene has stimulated exploration of single- and few-layer structures of layered inorganic materials. Of all the inorganic 2D nanosheet structures, those of MoS2 have attracted great attention because of their novel properties such as the presence of a direct bandgap, good field-effect transistor characteristics, large spin-orbit splitting, intense photoluminescence, catalytic properties, magnetism, superconductivity, ferroelectricity and several other properties with potential applications in electronics, optoelectronics, energy devices and spintronics. MoS2 nanosheets have been used in lithium batteries, supercapacitors and to generate hydrogen. Highlights of the impressive properties of MoS2 nanosheets, along with their structural and spectroscopic features are presented in this Letter. MoS2 typifies the family of metal dichalcogenides such as MoSe2 and WS2 and there is much to be done on nanosheets of these materials. Linus Pauling would have been pleased to see how molybdenite whose structure he studied in 1923 has become so important today.

  9. Compliant substrate epitaxy: Au on MoS2

    NASA Astrophysics Data System (ADS)

    Zhou, Yuzhi; Kiriya, Daisuke; Haller, E. E.; Ager, Joel W.; Javey, Ali; Chrzan, D. C.

    2016-02-01

    A theory for the epitaxial growth of Au on MoS2 is developed and analyzed. The theory combines continuum linear elasticity theory with density functional theory to analyze epitaxial growth in this system. It is demonstrated that if one accounts for interfacial energies and strains, the presence of misfit dislocations, and the compliance of the MoS2 substrate, the experimentally observed growth orientation is favored despite the fact that it represents a larger elastic mismatch than two competing structures. The stability of the experimentally preferred orientation is attributed to the formation of a large number of strong Au-S bonds, and it is noted that this strong bond may serve as a means to exfoliate and transfer large single layers sheets of MoS2, as well as to engineer strain within single layers of MoS2. The potential for using a van der Waals-bonded layered material as a compliant substrate for applications in 2D electronic devices and epitaxial thin film growth is discussed.

  10. Chemical sensing with ultra-thin MoS2

    NASA Astrophysics Data System (ADS)

    Friedman, Adam; Perkins, Keith; Cobas, Enrique; Campbell, Paul; Jernigan, Glenn; Jonker, Berend

    2013-03-01

    Although the majority of focus and excitement in recent years has been on studying the remarkable properties of single atomic-layer graphene, there exists a whole class of materials called dichalcogenides that are relatively easily fabricated in single-crystal mono- or few-layer format. Graphene, being chemically inert, does not lend itself to chemical sensing applications. However, MoS2, a dichalcogenide of recent interest because of its potential for transistor applications, possesses many advantageous properties for chemical sensing. Two primary examples include a sizable bandgap, which is necessary for fabricating transistors with large on/off current ratios, and a chemically reactive surface, which is necessary for easy surface functionalization. In this talk, we discuss our current research effort on MoS2 chemical sensors. We discuss aspects of transistor device fabrication and chemical sensing experiments. We expose MoS2 chemical sensors to a variety of analytes, finding the best response to triethylamine, a nerve gas by product, and explain our results based on a donor-acceptor model. MoS2 sensors are compared to other similar low-dimensional sensors and found to be of comparable quality.

  11. Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals

    PubMed Central

    Shi, Yumeng; Huang, Jing-Kai; Jin, Limin; Hsu, Yu-Te; Yu, Siu Fung; Li, Lain-Jong; Yang, Hui Ying

    2013-01-01

    We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the defect density in MoS2 layers. Field effect transistors were directly fabricated by placing ion gel gate dielectrics on Au-decorated MoS2 layers without the need to transfer these MoS2 layers to SiO2/Si substrates for bottom gate devices. The ion gel method allows probing the intrinsic electrical properties of the as-grown and Au-decorated MoS2 layers. This study shows that Au NPs impose remarkable p-doping effects to the MoS2 transistors without degrading their electrical characteristics. PMID:23670611

  12. Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.

    PubMed

    Pak, Jinsu; Jang, Jingon; Cho, Kyungjune; Kim, Tae-Young; Kim, Jae-Keun; Song, Younggul; Hong, Woong-Ki; Min, Misook; Lee, Hyoyoung; Lee, Takhee

    2015-11-28

    Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared with the pristine MoS2 FETs, caused by more electron-hole pairs separation at the p-n interface. Furthermore, we found the optimized CuPc thickness (∼2 nm) on the MoS2 surface for the best performance as a photodetector with a photoresponsivity of ∼1.98 A W(-1), a detectivity of ∼6.11 × 10(10) Jones, and an external quantum efficiency of ∼12.57%. Our study suggests that the MoS2 vertical hybrid structure with organic material can be promising as efficient photodetecting devices and optoelectronic circuits. PMID:26505460

  13. The OverMOS project

    NASA Astrophysics Data System (ADS)

    Das, D.; Dopke, J.; McMahon, S. J.; Turchetta, R.; Villani, G.; Wilson, F.; Worm, S.

    2016-07-01

    The OverMOS project aims to create a fast radiation hard tracking detector sensor, based on High Resistivity CMOS technology. In a first prototype submission, different pixel and charge collection node geometries have been produced, which have lately been returned from fabrication and are currently under test.

  14. MOS integrated circuit fault modeling

    NASA Technical Reports Server (NTRS)

    Sievers, M.

    1985-01-01

    Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.

  15. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, ultrathin transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high carrier mobility and tunable band-gap. However, available growth methods produce polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Correlated electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism. This abstract is replacing MAR16-2015-004166 that had exceeded the character limit.

  16. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, single layer transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high electrical conductivity, tunable band-gap, and strong light-matter interaction. However, available growth methods produce large-area polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Complementary electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism.

  17. A limited anodic and cathodic potential window of MoS2: limitations in electrochemical applications

    NASA Astrophysics Data System (ADS)

    Nasir, Muhammad Zafir Mohamad; Sofer, Zdenek; Ambrosi, Adriano; Pumera, Martin

    2015-02-01

    Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo4+ to Mo6+) and the catalytic hydrogen evolution reaction due to H3O+ reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ~-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2.Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo4+ to Mo6+) and the catalytic hydrogen evolution reaction due to H3O+ reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ~-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06899h

  18. Optoelectronic response and excitonic properties of monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Ben Amara, Imen; Ben Salem, Emna; Jaziri, Sihem

    2016-08-01

    Ab initio, electronic energy bands of MoS2 single layer are reported within the local density functional approximation. The inclusion of spin orbit coupling reveals the presence of two excitons A and B. We also discuss the change of physical properties of MoS2 from multilayer and bulk counterparts. The nature of the band gap changes from indirect to direct when the thickness is reduced to a single monolayer. The imaginary and real dielectric functions are investigated. Refractive index and birefringence are also reported. The results suggest that MoS2 is suitable for potential applications in optoelectronic and photovoltaic devices. The ab initio study is essential to propose the crucial parameters for the analytical model used for A-B exciton properties of the monolayer MoS2. From a theoretical point of view, we consider how the exciton behavior evolves under environmental dielectrics.

  19. Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

    NASA Astrophysics Data System (ADS)

    Andleeb, Shaista; Singh, Arun Kumar; Eom, Jonghwa

    2015-06-01

    We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of ~4 without degrading the electrical characteristics of MoS2 devices.

  20. Characterization of a linear device developed for research on advanced plasma imaging and dynamics.

    PubMed

    Chung, J; Lee, K D; Seo, D C; Nam, Y U; Choi, M C

    2010-10-01

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 °C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5×10(-8) Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations. PMID:21033972

  1. A microtomography beamline at the Louisiana State University Center for Advanced Microstructures and Devices synchrotron

    NASA Astrophysics Data System (ADS)

    Ham, Kyungmin; Jin, Hua; Butler, Leslie G.; Kurtz, Richard L.

    2002-03-01

    A microtomography beamline has been recently assembled and is currently operating at the Louisiana State University's Center for Advanced Microstructures and Devices synchrotron (CAMD). It has been installed on a bending magnet white-light beamline at port 7A. With the storage ring operating at 1.5 GeV, this beamline has a maximum usable x-ray energy of ˜15 keV. The instrumentation consists of computer-controlled positioning stages for alignment and rotation, a CsI(Tl) phosphor screen, a reflecting mirror, a microscope objective (1:1, 1:4), and Linux/LabVIEW-controlled charge coupled device. With the 1:4 objective, the maximum spatial resolution is 2.25 μm. The positioning and image acquisition computers communicate via transfer control protocol/internet protocol (TCP/IP). A small G4/Linux cluster has been installed for the purpose of on-site reconstruction. Instrument, alignment and reconstruction programs are written in MATLAB, IDL, and C. The applications to date are many and we present several examples. Several biological samples have been studied as part of an effort on biological visualization and computation. Future improvements to this microtomography station include the addition of a double-multilayer monochromator, allowing one to evaluate the three-dimensional elemental composition of materials. Plans also include eventual installation at the CAMD 7 T wiggler beamline, providing x rays in excess of 50 keV to provide better penetration of higher mass-density materials.

  2. Characterization of a linear device developed for research on advanced plasma imaging and dynamics

    SciTech Connect

    Chung, J.; Lee, K. D.; Seo, D. C.; Nam, Y. U.; Choi, M. C.

    2010-10-15

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 deg. C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5x10{sup -8} Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations.

  3. Pressure confinement effect in MoS2 monolayers.

    PubMed

    Li, Fangfei; Yan, Yalan; Han, Bo; Li, Liang; Huang, Xiaoli; Yao, Mingguang; Gong, Yuanbo; Jin, Xilian; Liu, Baoli; Zhu, Chuanrui; Zhou, Qiang; Cui, Tian

    2015-05-21

    With ever increasing interest in layered materials, molybdenum disulfide has been widely investigated due to its unique optoelectronic properties. Pressure is an effective technique to tune the lattice and electronic structure of materials such that high pressure studies can disclose new structural and optical phenomena. In this study, taking MoS2 as an example, we investigate the pressure confinement effect on monolayer MoS2 by in situ high pressure Raman and photoluminescence (PL) measurements. Our results reveal a structural deformation of monolayer MoS2 starting from 0.84 GPa, which is evidenced by the splitting of E(1)2g and A1g modes. A further compression leads to a transition from the 1H-MoS2 phase to a novel structure evidenced by the appearance of two new peaks located at 200 and 240 cm(-1). This is a distinct feature of monolayer MoS2 compared with bulk MoS2. The new structure is supposed to have a distorted unit with the S atoms slided within a single layer like that of metastable 1T'-MoS2. However, unlike the non-photoluminescent 1T'-MoS2 structure, our monolayer shows a remarkable PL peak and a pressure-induced blue shift up to 13.1 GPa. This pressure-dependent behavior might enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials. PMID:25922917

  4. Polarization-dependent photocurrent in MoS2 phototransistor

    NASA Astrophysics Data System (ADS)

    Li, Jiu; Yu, Wentao; Chu, Saisai; Yang, Hong; Shi, Kebin; Gong, Qihuang

    2015-03-01

    Monolayer or few-layer molybdenum disulfide (MoS2) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS2 thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS2 transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS2 field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS2 FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos2θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.

  5. Mandibular advancement devices: indications and predictors of treatment outcome. A review.

    PubMed

    Cuccia, A M; Caradonna, C

    2007-09-01

    Obstructive sleep apnea syndrome (OSAS) is a chronic sleep and respiratory disorder, which causes a partial or total obstruction of the air passage at the upper airway level. Mandibular advancement devices (MADs) have been used in the treatment of snoring, but may be a valid alternative to the continuous nasal positive airway pressure (CPAP) for certain OSAS cases. Therapy by means of MADs arises the interest of the scientific community and now there are many sleep-centres where dentists work as experts in sleep disorders. MADs are instruments of value because they are simple to use, reversible, portable and they generally have a low complication rate. They mechanically increase the oropharyngeal space by advancing the mandible and/or the tongue and reduce pharyngeal collapsibility. More than 60 different MADs are in use, with considerable variations in design. Several studies show that their systematic use produces an evident improvement in the global quality of life as well as in the symptoms of patients with OSAS, especially sleepiness. Even though significant progress has been made in proving the efficacy of MADs for OSAS, the ability to predict the treatment outcome and hence pre-select suitable candidates for this treatment still remains in its early stage. The first aim of this review is to supply to the clinician informations on the cephalometric and polysomnographic parameters that can be used to predict the efficacy of the outcome of MAD therapy in OSAS. Moreover, we examine the cases for which the use of a MAD is indicated. PMID:17938623

  6. Teaching Advanced Operation of an iPod-Based Speech-Generating Device to Two Students with Autism Spectrum Disorders

    ERIC Educational Resources Information Center

    Achmadi, Donna; Kagohara, Debora M.; van der Meer, Larah; O'Reilly, Mark F.; Lancioni, Giulio E.; Sutherland, Dean; Lang, Russell; Marschik, Peter B.; Green, Vanessa A.; Sigafoos, Jeff

    2012-01-01

    We evaluated a program for teaching two adolescents with autism spectrum disorders (ASD) to perform more advanced operations on an iPod-based speech-generating device (SGD). The effects of the teaching program were evaluated in a multiprobe multiple baseline across participants design that included two intervention phases. The first intervention…

  7. Return on Investment and Technology-Based Training--An Introduction and a Case Study at Advanced Micro Devices.

    ERIC Educational Resources Information Center

    Masumian, Bijan

    1999-01-01

    Summarizes findings from studies comparing classroom and technology-based approaches to training and the respective Return on Investment (ROI) data. Highlights several advantages of technology-based training. Offers information and initial ROI numbers on the use of technology-based training at Advanced Micro Devices, a global manufacturer of…

  8. Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts

    PubMed Central

    Yoon, Hyong Seo; Joe, Hang-Eun; Jun Kim, Sun; Lee, Hee Sung; Im, Seongil; Min, Byung-Kwon; Jun, Seong Chan

    2015-01-01

    Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi- layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO2 gases based on the metal work function and the Schottky barrier height change. PMID:25990304

  9. Engineering MoS2 contact with graphene electrodes under electrostatic doping

    NASA Astrophysics Data System (ADS)

    Shih, En-Min; Ribeiro-Palau, Rebeca; Arefe, Ghidewon; Kim, Young-Duck; Li, Jia; Hone, James; Dean, Cory

    Semiconductor transition metal dichalcogenides (TMDs) are 2D semiconductors that host attractive transport properties such as unconventional quantum Hall effect and spin-valley physics. However, metal contacts typically result in a Schottky barrier, making it difficult to access fundamental properties of the intrinsic charge transport. In this report, we utilize graphene electrodes to achieve ohmic contact to MoS2 monolayer and bilayer. Our devices are fully capsulated by boron-nitride, which reduces the disorders from Si/SiO2 substrate, and benefit from a dual-gate geometry, which allow us to independently dope the MoS2 channel and graphene contact regions. The transition from non-ohmic to ohmic contacts is studied as a function of graphene doping and the MoS2 carrier density. Our results reveal the operational range of these new devices, and provide new insight into future device design.

  10. Heating-up Synthesis of MoS2 Nanosheets and Their Electrical Bistability Performance

    NASA Astrophysics Data System (ADS)

    Li, Xu; Tang, Aiwei; Li, Jiantao; Guan, Li; Dong, Guoyi; Teng, Feng

    2016-03-01

    Molybdenum disulfide (MoS2) nanosheets were synthesized by using a simple heating-up approach, in which 1-dodecanethiol (DDT) was used not only as a sulfur source but also as the surface ligand. The sheet-like morphology was confirmed by the transmission electron microscopy (TEM) and atomic force microscopy (AFM) results, and the X-ray diffraction (XRD) patterns and Raman spectrum were employed to characterize the structure of the as-synthesized MoS2 nanosheets. The as-obtained MoS2 nanosheets blending with a polymer could be used to fabricate an electrically bistable device through a simple spin-coating method, and the device exhibited an obvious electrical bistability in the I-V curve. The charge transport of the device was discussed based on the organic electronic models.

  11. Heating-up Synthesis of MoS2 Nanosheets and Their Electrical Bistability Performance.

    PubMed

    Li, Xu; Tang, Aiwei; Li, Jiantao; Guan, Li; Dong, Guoyi; Teng, Feng

    2016-12-01

    Molybdenum disulfide (MoS2) nanosheets were synthesized by using a simple heating-up approach, in which 1-dodecanethiol (DDT) was used not only as a sulfur source but also as the surface ligand. The sheet-like morphology was confirmed by the transmission electron microscopy (TEM) and atomic force microscopy (AFM) results, and the X-ray diffraction (XRD) patterns and Raman spectrum were employed to characterize the structure of the as-synthesized MoS2 nanosheets. The as-obtained MoS2 nanosheets blending with a polymer could be used to fabricate an electrically bistable device through a simple spin-coating method, and the device exhibited an obvious electrical bistability in the I-V curve. The charge transport of the device was discussed based on the organic electronic models. PMID:27033847

  12. A Cs2LiYCl6:Ce-based advanced radiation monitoring device

    NASA Astrophysics Data System (ADS)

    Budden, B. S.; Stonehill, L. C.; Dallmann, N.; Baginski, M. J.; Best, D. J.; Smith, M. B.; Graham, S. A.; Dathy, C.; Frank, J. M.; McClish, M.

    2015-06-01

    Cs2LiYCl6:Ce3+ (CLYC) scintillator has gained recent interest because of its ability to perform simultaneous gamma spectroscopy and thermal neutron detection. Discrimination between the two incident particle types owes to the fundamentally unique emission waveforms, a consequence of the interaction and subsequent scintillation mechanisms within the crystal. Due to this dual-mode detector capability, CLYC was selected for the development of an Advanced Radiation Monitoring Device (ARMD), a compact handheld instrument for radioisotope identification and localization. ARMD consists of four 1 in.-right cylindrical CLYC crystals, custom readout electronics including a suitable multi-window application specific integrated circuit (ASIC), battery pack, proprietary software, and Android-based tablet for high-level analysis and display. We herein describe the motivation of the work and engineering design of the unit, and we explain the software embedded in the core module and for radioisotope analysis. We report an operational range of tens of keV to 8.5 MeV with approximately 5.3% gamma energy resolution at 662 keV, thermal neutron detection efficiency of 10%, battery lifetime of up to 10 h, manageable rates of 20 kHz; further, we describe in greater detail time to identify specific gamma source setups.

  13. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing.

    PubMed

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices. PMID:26233395

  14. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    NASA Astrophysics Data System (ADS)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  15. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  16. Family-centred care during midface advancement with a rigid external device: what do families need?

    PubMed

    Bredero-Boelhouwer, H; Joosten, K F M; van Veen-van der Hoek, M; Mathijssen, I M J

    2013-08-01

    Midface advancement with distraction osteogenesis using the rigid external device (RED) is an effective but invasive treatment to correct the hypoplastic midface. This study draws up an inventory of the stressors, needs and coping strategies of families during this treatment, to determine the best conditions for family-centred care. Data were collected by reviewing the patients' files and administering semi-structured interviews. The data were analysed using the software program Atlas.ti and were re-analysed by an independent researcher. Parents and patients were interviewed separately. Fourteen families participated. Four patients had an absolute indication for surgery. All families were eager to have the patient's facial appearance improved. Nevertheless, despite psychological counselling, they experienced stress when confronted with the changed facial appearance. Another stressor was weight loss. Six patients were in a state of acute malnutrition and needed supplementary feeding. We conclude that the best conditions for family-centred care should be aligned to the different phases of treatment. Leading up to surgery it is important to screen families' expectations regarding aesthetic, functional and social outcomes and to assess their capacity to cope with the long treatment and effects of changed facial appearance. Peer contact and psychosocial training to increase self-esteem are tools to enhance co-operation and satisfaction. During the distraction and stabilisation phase, we advise the monitoring of nutritional intake and weight. During all phases of treatment easy accessibility to the team is recommended. PMID:23664572

  17. Advanced Aerodynamic Devices to Improve the Performance, Economics, Handling, and Safety of Heavy Vehicles

    SciTech Connect

    Robert J. Englar

    2001-05-14

    Research is being conducted at the Georgia Tech Research Institute (GTRI) to develop advanced aerodynamic devices to improve the performance, economics, stability, handling and safety of operation of Heavy Vehicles by using previously-developed and flight-tested pneumatic (blown) aircraft technology. Recent wind-tunnel investigations of a generic Heavy Vehicle model with blowing slots on both the leading and trailing edges of the trailer have been conducted under contract to the DOE Office of Heavy Vehicle Technologies. These experimental results show overall aerodynamic drag reductions on the Pneumatic Heavy Vehicle of 50% using only 1 psig blowing pressure in the plenums, and over 80% drag reductions if additional blowing air were available. Additionally, an increase in drag force for braking was confirmed by blowing different slots. Lift coefficient was increased for rolling resistance reduction by blowing only the top slot, while downforce was produced for traction increase by blowing only the bottom. Also, side force and yawing moment were generated on either side of the vehicle, and directional stability was restored by blowing the appropriate side slot. These experimental results and the predicted full-scale payoffs are presented in this paper, as is a discussion of additional applications to conventional commercial autos, buses, motor homes, and Sport Utility Vehicles.

  18. Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics

    PubMed Central

    Nam, Hongsuk; Oh, Bo-Ram; Chen, Pengyu; Chen, Mikai; Wi, Sungjin; Wan, Wenjie; Kurabayashi, Katsuo; Liang, Xiaogan

    2015-01-01

    Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS2-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS2 transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be KD = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 108 M−1s−1 and (1.97 ± 0.08) × 10−4 s−1, respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities. PMID:26014289

  19. A MOS for all seasons

    NASA Astrophysics Data System (ADS)

    Bryant, Larry

    1995-01-01

    From a systems perspective, this paper examines the challenges of a single system to support multiple Jet Propulsion Laboratory (JPL) space exploration missions and the need for unitary responsibility for the system. The focus is a Mission Operations System (MOS), which is effectively a mission management organization with direct authority over data system operations, command sequencing, flight operations control, data management, trajectory determination, telemetry and data acquisition, and spacecraft analysis. Stratagems for training and the approach to processes, procedures, and interfaces to facilitate the transition from the present situation to a truly multimission operational environment are developed. The outcome is a paradigm for a MOS that is achievable, that can effectively support multiple projects, and that can take advantage of technological changes without perturbing the entire system.

  20. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide

    NASA Astrophysics Data System (ADS)

    Valsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh; Register, Leonard F.; Banerjee, Sanjay K.

    2015-12-01

    Monolayer (ML) transition metal dichalcogenides are novel, gapped two-dimensional materials with unique electrical and optical properties. Toward device applications, we consider MoS2 layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional based simulations, we consider the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in the MoS2 layer. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS2-dielectrics system and for isolated dielectric layers for reference. Among our results, we find that with O vacancies, both the Hf-terminated HfO2-MoS2 system, and the O-terminated and H-passivated Al2O3-MoS2 systems appear metallic due to doping of the oxide slab followed by electron transfer into the MoS2, in manner analogous to modulation doping. The n-type doping of ML MoS2 by high-k oxides with oxygen vacancies then is experimentally demonstrated by electrically and spectroscopically characterizing back-gated ML MoS2 field effect transistors encapsulated by oxygen deficient alumina and hafnia.

  1. Novel Rigid External Distraction Device Improves Stability and Controls the Vector During Midfacial Advancement.

    PubMed

    Resnick, Cory M; Rottgers, Stephen Alex; Langenfeld, Christopher C; Mulliken, John B; Padwa, Bonnie L

    2016-06-01

    The major limitation of the rigid external devices currently used for midfacial distraction after subcranial Le Fort III osteotomies is the ductile wire that connects the midface to the device, which makes it difficult to control the vector and force during distraction. The authors describe a novel external appliance that addresses this and other problems of contemporary devices, and application of a custom cranial template that facilitates precise placement of the device to achieve the planned vector of distraction. PMID:27213737

  2. Understanding the Intrinsic Water Wettability of Molybdenum Disulfide (MoS2).

    PubMed

    Kozbial, Andrew; Gong, Xiao; Liu, Haitao; Li, Lei

    2015-08-01

    2D semiconductors allow for unique and ultrasensitive devices to be fabricated for applications ranging from clinical diagnosis instruments to low-energy light-emitting diodes (LEDs). Graphene has championed research in this field since it was first fabricated; however, its zero bandgap creates many challenges. Transition metal dichalcogenides (TMDCs), e.g., MoS2, have a direct bandgap which alleviates the challenge of creating a bandgap in graphene-based devices. Water wettability of MoS2 is critical to device fabrication/performance and MoS2 has been believed to be hydrophobic. Herein, we report that water contact angle (WCA) of freshly exfoliated MoS2 shows temporal evolution with an intrinsic WCA of 69.0 ± 3.8° that increases to 89.0 ± 3.1° after 1 day exposure to ambient air. ATR-FTIR and ellipsometry show that the fresh, intrinsically mildly hydrophilic MoS2 surface adsorbs hydrocarbons from ambient air and thus becomes hydrophobic. PMID:26172421

  3. Tunable charge-trap memory based on few-layer MoS2.

    PubMed

    Zhang, Enze; Wang, Weiyi; Zhang, Cheng; Jin, Yibo; Zhu, Guodong; Sun, Qingqing; Zhang, David Wei; Zhou, Peng; Xiu, Faxian

    2015-01-27

    Charge-trap memory with high-κ dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their fantastic physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Because of the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. Importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 10(4), allowing for multibit information storage. Moreover, the device shows a high endurance of hundreds of cycles and a stable retention of ∼ 28% charge loss after 10 years, which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-κ charge-trap gate stacks opens up an exciting field of nonvolatile memory devices. PMID:25496773

  4. Advanced copper/low-k IC devices: Packaging process development and materials integrtion

    NASA Astrophysics Data System (ADS)

    Chungpaiboonpatana, Surasit

    Cu/low-k technology provides a number of key advantages including higher interconnect density, improved electrical performance, enhanced thermal performance, and reduced cost. Nevertheless, Cu/low-k IC technology poses many challenges to the packaging industry today. Specifically, low-k dielectric is much more fragile mechanically and copper surfaces are readily oxidized thereby weakening their adhesion to the ILD/metallization layers. The purpose of the study is to provide integrated and reliable materials and process solutions for the packaging of advanced Cu/low-k devices through fundamental materials science understanding. Novel solutions for advanced wirebond and flip-chip technologies are developed, along with resolutions for local and global material interaction issues. The zero-th packaging level study examines a novel direct gold wirebonding onto the Cu/low-k terminal pad structure. The first packaging level study attempts to eliminate the Cu/low-k wiresweeping issue through assembly material interactions with both bonding and transfer molding processes. The second packaging level study exams at the impact of Cu/low-k and processing material implementations on the copper trace cracking failures at the substrate level of a package. An integrated first and second level study on high performance flip chip technology using 8M Cu/low-k silicon chip is performed by the optimization of the underfill and substrate materials selections. Lastly, electromigration phenomena and corrosion mechanisms of copper metallization are developed for biased stressing assembly environment through the fundamental of electrochemistry. Throughout the experiment, the 90/130nm technology node of copper wafer fabrication using Black Diamond low-k dielectric is implemented in several large form-factor package assemblies. Functional test vehicles are assembled, reliability-stressed, and failure-analyzed according to the JEDEC standards for the validity of the integrated materials

  5. Strain engineering of selective chemical adsorption on monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Kou, Liangzhi; Du, Aijun; Chen, Changfeng; Frauenheim, Thomas

    2014-04-01

    Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the properties of the host material. Recent studies discovered that single and multi-layer molybdenum disulfide (MoS2) films are ultra-sensitive to several important environmental molecules. Here we report new findings from ab inito calculations that reveal substantially enhanced adsorption of NO and NH3 on strained monolayer MoS2 with significant impact on the properties of the adsorbates and the MoS2 layer. The magnetic moment of adsorbed NO can be tuned between 0 and 1 μB strain also induces an electronic phase transition between the half-metal and the metal. Adsorption of NH3 weakens the MoS2 layer considerably, which explains the large discrepancy between the experimentally measured strength and breaking strain of MoS2 films and previous theoretical predictions. On the other hand, adsorption of NO2, CO, and CO2 is insensitive to the strain conditions in the MoS2 layer. This contrasting behavior allows sensitive strain engineering of selective chemical adsorption on MoS2 with effective tuning of mechanical, electronic, and magnetic properties. These results suggest new design strategies for constructing MoS2-based ultrahigh-sensitivity nanoscale sensors and electromechanical devices.Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the properties of the host material. Recent studies discovered that single and multi-layer molybdenum disulfide (MoS2) films are ultra-sensitive to several important environmental molecules. Here we report new findings from ab inito calculations that reveal substantially enhanced adsorption of NO and NH3 on strained monolayer MoS2 with significant impact on the properties of the adsorbates and the

  6. Automated hotspot analysis with aerial image CD metrology for advanced logic devices

    NASA Astrophysics Data System (ADS)

    Buttgereit, Ute; Trautzsch, Thomas; Kim, Min-ho; Seo, Jung-Uk; Yoon, Young-Keun; Han, Hak-Seung; Chung, Dong Hoon; Jeon, Chan-Uk; Meyers, Gary

    2014-09-01

    Continuously shrinking designs by further extension of 193nm technology lead to a much higher probability of hotspots especially for the manufacturing of advanced logic devices. The CD of these potential hotspots needs to be precisely controlled and measured on the mask. On top of that, the feature complexity increases due to high OPC load in the logic mask design which is an additional challenge for CD metrology. Therefore the hotspot measurements have been performed on WLCD from ZEISS, which provides the benefit of reduced complexity by measuring the CD in the aerial image and qualifying the printing relevant CD. This is especially of advantage for complex 2D feature measurements. Additionally, the data preparation for CD measurement becomes more critical due to the larger amount of CD measurements and the increasing feature diversity. For the data preparation this means to identify these hotspots and mark them automatically with the correct marker required to make the feature specific CD measurement successful. Currently available methods can address generic pattern but cannot deal with the pattern diversity of the hotspots. The paper will explore a method how to overcome those limitations and to enhance the time-to-result in the marking process dramatically. For the marking process the Synopsys WLCD Output Module was utilized, which is an interface between the CATS mask data prep software and the WLCD metrology tool. It translates the CATS marking directly into an executable WLCD measurement job including CD analysis. The paper will describe the utilized method and flow for the hotspot measurement. Additionally, the achieved results on hotspot measurements utilizing this method will be presented.

  7. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride.

    PubMed

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-01-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

  8. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    PubMed Central

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-01-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

  9. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

    PubMed

    Pierucci, Debora; Henck, Hugo; Avila, Jose; Balan, Adrian; Naylor, Carl H; Patriarche, Gilles; Dappe, Yannick J; Silly, Mathieu G; Sirotti, Fausto; Johnson, A T Charlie; Asensio, Maria C; Ouerghi, Abdelkarim

    2016-07-13

    Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential. PMID:27281693

  10. A limited anodic and cathodic potential window of MoS2: limitations in electrochemical applications.

    PubMed

    Nasir, Muhammad Zafir Mohamad; Sofer, Zdenek; Ambrosi, Adriano; Pumera, Martin

    2015-02-21

    Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo(4+) to Mo(6+)) and the catalytic hydrogen evolution reaction due to H3O(+) reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ∼-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2. PMID:25611023

  11. Synthesis and sensor applications of MoS2-based nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhang, Wensi; Zhang, Panpan; Su, Zhiqiang; Wei, Gang

    2015-11-01

    Molybdenum disulfide (MoS2) is a typical layered transition-metal dichalcogenide material, which has aroused a great deal of interest in the past few years. Recently, more and more attention has been focused on the synthesis and applications of MoS2-based nanocomposites. In this review, we aimed to present a wider view of the synthesis of various MoS2-based nanocomposites for sensor and biosensor applications. We highlighted the potential methods like self-assembly, hydrothermal reaction, chemical vapour deposition, electrospinning, as well as microwave and laser beam treatments for the successful preparation of MoS2-based nanocomposites. On the other hand, three representative types of detection devices fabricated by the MoS2-based nanocomposites, field-effect transistor, optical, and electrochemical sensors, were introduced in detail and discussed fully. The relationships between the sensing performances and the special nanostructures within the MoS2-based nanocomposites were presented and discussed.

  12. Plasmonic pumping of excitonic photoluminescence in hybrid MoS2-Au nanostructures.

    PubMed

    Najmaei, Sina; Mlayah, Adnen; Arbouet, Arnaud; Girard, Christian; Léotin, Jean; Lou, Jun

    2014-12-23

    We report on the fabrication of monolayer MoS2-coated gold nanoantennas combining chemical vapor deposition, e-beam lithography surface patterning, and a soft lift-off/transfer technique. The optical properties of these hybrid plasmonic-excitonic nanostructures are investigated using spatially resolved photoluminescence spectroscopy. Off- and in-resonance plasmonic pumping of the MoS2 excitonic luminescence showed distinct behaviors. For plasmonically mediated pumping, we found a significant enhancement (∼65%) of the photoluminescence intensity, clear evidence that the optical properties of the MoS2 monolayer are strongly influenced by the nanoantenna surface plasmons. In addition, a systematic photoluminescence broadening and red-shift in nanoantenna locations is observed which is interpreted in terms of plasmonic enhanced optical absorption and subsequent heating of the MoS2 monolayers. Using a temperature calibration procedure based on photoluminescence spectral characteristics, we were able to estimate the local temperature changes. We found that the plasmonically induced MoS2 temperature increase is nearly four times larger than in the MoS2 reference temperatures. This study shines light on the plasmonic-excitonic interaction in these hybrid metal/semiconductor nanostructures and provides a unique approach for the engineering of optoelectronic devices based on the light-to-current conversion. PMID:25469686

  13. Controlled van der Waals epitaxy of monolayer MoS2 triangular domains on graphene.

    PubMed

    Ago, Hiroki; Endo, Hiroko; Solís-Fernández, Pablo; Takizawa, Rina; Ohta, Yujiro; Fujita, Yusuke; Yamamoto, Kazuhiro; Tsuji, Masaharu

    2015-03-11

    Multilayered heterostructures of two-dimensional materials have recently attracted increased interest because of their unique electronic and optical properties. Here, we present chemical vapor deposition (CVD) growth of triangular crystals of monolayer MoS2 on single-crystalline hexagonal graphene domains which are also grown by CVD. We found that MoS2 grows selectively on the graphene domains rather than on the bare supporting SiO2 surface. Reflecting the heteroepitaxy of the growth process, the MoS2 domains grown on graphene present two preferred equivalent orientations. The interaction between the MoS2 and the graphene induced an upshift of the Raman G and 2D bands of the graphene, while significant photoluminescence quenching was observed for the monolayer MoS2. Furthermore, photoinduced current modulation along with an optical memory effect was demonstrated for the MoS2-graphene heterostructure. Our work highlights that heterostructures synthesized by CVD offer an effective interlayer van der Waals interaction which can be developed for large-area multilayer electronic and photonic devices. PMID:25695865

  14. Synthesis and sensor applications of MoS2-based nanocomposites.

    PubMed

    Zhang, Wensi; Zhang, Panpan; Su, Zhiqiang; Wei, Gang

    2015-11-28

    Molybdenum disulfide (MoS2) is a typical layered transition-metal dichalcogenide material, which has aroused a great deal of interest in the past few years. Recently, more and more attention has been focused on the synthesis and applications of MoS2-based nanocomposites. In this review, we aimed to present a wider view of the synthesis of various MoS2-based nanocomposites for sensor and biosensor applications. We highlighted the potential methods like self-assembly, hydrothermal reaction, chemical vapour deposition, electrospinning, as well as microwave and laser beam treatments for the successful preparation of MoS2-based nanocomposites. On the other hand, three representative types of detection devices fabricated by the MoS2-based nanocomposites, field-effect transistor, optical, and electrochemical sensors, were introduced in detail and discussed fully. The relationships between the sensing performances and the special nanostructures within the MoS2-based nanocomposites were presented and discussed. PMID:26503462

  15. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NASA Astrophysics Data System (ADS)

    Nishiguchi, Katsuhiko; Castellanos-Gomez, Andres; Yamaguchi, Hiroshi; Fujiwara, Akira; van der Zant, Herre S. J.; Steele, Gary A.

    2015-08-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

  16. ISS Squat and Deadlift Kinematics on the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Newby, N.; Caldwell, E.; Sibonga, J.; Ploutz-Snyder, L.

    2014-01-01

    Visual assessment of exercise form on the Advanced Resistive Exercise Device (ARED) on orbit is difficult due to the motion of the entire device on its Vibration Isolation System (VIS). The VIS allows for two degrees of device translational motion, and one degree of rotational motion. In order to minimize the forces that the VIS must damp in these planes of motion, the floor of the ARED moves as well during exercise to reduce changes in the center of mass of the system. To help trainers and other exercise personnel better assess squat and deadlift form a tool was developed that removes the VIS motion and creates a stick figure video of the exerciser. Another goal of the study was to determine whether any useful kinematic information could be obtained from just a single camera. Finally, the use of these data may aid in the interpretation of QCT hip structure data in response to ARED exercises performed in-flight. After obtaining informed consent, four International Space Station (ISS) crewmembers participated in this investigation. Exercise was videotaped using a single camera positioned to view the side of the crewmember during exercise on the ARED. One crewmember wore reflective tape on the toe, heel, ankle, knee, hip, and shoulder joints. This technique was not available for the other three crewmembers, so joint locations were assessed and digitized frame-by-frame by lab personnel. A custom Matlab program was used to assign two-dimensional coordinates to the joint locations throughout exercise. A second custom Matlab program was used to scale the data, calculate joint angles, estimate the foot center of pressure (COP), approximate normal and shear loads, and to create the VIS motion-corrected stick figure videos. Kinematics for the squat and deadlift vary considerably for the four crewmembers in this investigation. Some have very shallow knee and hip angles, and others have quite large ranges of motion at these joints. Joint angle analysis showed that crewmembers

  17. Prospects of application of superconducting electrodynamic structures in electronic devices for their advancement to the terahertz range

    NASA Astrophysics Data System (ADS)

    Kuraev, A. A.; Kurkin, S. A.; Koronovskii, A. A.; Rak, A. O.; Sinitsyn, A. K.; Hramov, A. E.

    2015-04-01

    It is shown that the application of superconducting electrodynamic structures in microwave electronic devices not only improves their characteristics, but also creates premises for implementation of devices like the autophase traveling-wave tube (TWT) and peniotron operating in the millimeter range with their further advancement to the terahertz range, which is impossible for conventional electrodynamic structures with Ohmic losses. Superconducting corrugated waveguides make it possible to suspend limitations imposed on the output power of pulsed relativistic Cherenkov oscillators, which are associated with thermal degradation of the working surface of conventional waveguides with Ohmic losses.

  18. Photoresponse properties of large-area MoS2 atomic layer synthesized by vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Luo, Siwei; Qi, Xiang; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin

    2014-10-01

    Photoresponse properties of a large area MoS2 atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS2 atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS2 devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

  19. Tuning the Electrical and Optical Properties of MoS2 under High Pressure

    NASA Astrophysics Data System (ADS)

    Nayak, Avinash; Zhu, Jie; Lin, Jung-Fu; Akinwande, Deji

    2013-06-01

    Transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS2), has been of recent interest to many theoretical and experimental studies. MoS2 has served as a potential material for optoelectronic and field-effect-transistors (FETs) with high on/off ratios (up to 108). MoS2 is composed of quasi-two-dimensional sheets that are stacked on top of one another where each monolayer is tri-layered with a transition metal, molybdenum, in the middle that is covalently bonded to a chalcogen atom, sulfur, located on the top and bottom of the layers. These layers are separated by weak van der Waals (vdW) forces along the c-axis which makes the properties of MoS2 anisotropic. Having control over the electronic properties, and therefore, the band-gap of MoS2, allows for a wide range of applications from electrochemical devices to tunable photo-detectors to be adopted. We demonstrate the electronic phase transition of MoS2 from semiconducting to a metallic state at ~15 GPa. The electronic transport properties in the semiconducting region (lower pressures) exhibits a shockley-like behavior while in the metallic region (higher pressures), we observe ohmic transport. We also examine the light-induced electronic properties by creating optical switches under pressure in greater detail. This photo-current behavior of MoS2 allows for optical switches with three order decrease in turn-on time. We examine the change in the activation energy, optical Raman, XRD, and resistance, by inducing pressure to MoS2 up to 35 GPa.

  20. Nonvolatile memory cells based on MoS2/graphene heterostructures.

    PubMed

    Bertolazzi, Simone; Krasnozhon, Daria; Kis, Andras

    2013-04-23

    Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration. PMID:23510133

  1. Strongly enhanced photoluminescence in nanostructured monolayer MoS2 by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhu, Yi; Yang, Jiong; Zhang, Shuang; Mokhtar, Salman; Pei, Jiajie; Wang, Xinghua; Lu, Yuerui

    2016-04-01

    Two-dimensional (2D) layered molybdenum disulfide (MoS2) has become a very promising candidate semiconducting material for future optoelectronic devices, owing to its unique properties. However, monolayer MoS2 is still a weak photon emitter, compared with other direct band gap semiconductors, which requires extra techniques or complicated steps to enhance its photon emission efficiency. Here, we demonstrated that nanostructured monolayer MoS2, produced by one-step chemical vapor deposition (CVD) growth, shows highly enhanced PL emission. The effective enhancement factor could be up to ∼43. Our results open the door to manipulating the optical properties of future devices by using nanostructured 2D monolayers.

  2. Effects of High-Energy X-Ray Radiation on MoS2 FETs

    NASA Astrophysics Data System (ADS)

    Rai, Amritesh; Thoutam, Laxman; Zhang, Wei; Kovi, Kiran; Banerjee, Sanjay; Das, Saptarshi

    FETs based on semiconducting MoS2 nanosheets are currently being extensively explored for various nanoelectronic device applications. In real-life, several of these applications mandate the exposure of devices to X-ray radiation. In this study, we investigate the effects of high-energy X-ray radiation on few-layer MoS2 transistors. Back-gated MoS2 FETs on SiO2 substrates were fabricated and exposed to X-ray radiation in an enclosed X-ray tube utilizing tungsten as the X-ray source. The devices were exposed to successive radiation doses up to a cumulative dose of 1500 kilorads (Krads). Even after high radiation doses, the devices maintained acceptable electrical performance with high ION/IOFF ratios and good current saturation. The subthreshold swing remained similar to initial values. There was, however, a slight reduction in the ON-currents after each successive radiation, concomitant with a positive threshold voltage shift that can be attributed to the formation of negative-fixed charges in the substrate. Moreover, the maximum transconductance (gm) of the devices decreased slightly with increasing radiation dose. Finally, Raman spectroscopy revealed practically no change in the in-plane and out-of-plane Raman modes of MoS2 after radiation.

  3. Markedly different adsorption behaviors of gas molecules on defective monolayer MoS2: a first-principles study.

    PubMed

    Li, Hongxing; Huang, Min; Cao, Gengyu

    2016-06-01

    Sulfur vacancy (SV) is one of the most typical defects in two-dimensional monolayer MoS2, leading to reactive sites. We presented a systematic study of the adsorption behaviors of gas molecules, CO2, N2, H2O, CO, NH3, NO, O2, H2 and NO2, on monolayer MoS2 with single SV by first-principles calculations. It was found that CO2, N2 and H2O molecules physisorbed at the proximity of single SV. Our adsorption energy calculations and charge transfer analysis showed that the interactions between CO2, N2 and H2O molecules and defective MoS2 are stronger than the cases of CO2, N2 and H2O molecules adsorbed on pristine MoS2, respectively. The defective MoS2 based gas sensors may be more sensitive to CO2, N2 and H2O molecules than pristine MoS2 based ones. CO, NO, O2 and NH3 molecules were found to chemisorb at the S vacancy site and thus modify the electronic properties of defective monolayer MoS2. Magnetism was induced upon adsorption of NO molecules and the defective states induced by S vacancy can be completely removed upon adsorption of O2 molecules, which may provide some helpful information for designing new MoS2 based nanoelectronic devices in future. The H2 and NO2 molecules were found to dissociate at S vacancy. The dissociation of NO2 molecules resulted in O atoms located at the S vacancy site and NO molecules physisorbed on O-doped MoS2. The calculated results showed that NO2 molecules can help heal the S vacancy of the MoS2 monolayer. PMID:27198064

  4. Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

    PubMed

    Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

    2015-05-13

    Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. PMID:25641643

  5. Wafer-Scale, Homogeneous MoS2 Layers on Plastic Substrates for Flexible Visible-Light Photodetectors.

    PubMed

    Lim, Yi Rang; Song, Wooseok; Han, Jin Kyu; Lee, Young Bum; Kim, Sung Jun; Myung, Sung; Lee, Sun Sook; An, Ki-Seok; Choi, Chel-Jong; Lim, Jongsun

    2016-07-01

    An appropriate solution is suggested for synthesizing wafer-scale, continuous, and stoichiometric MoS2 layers with spatial homogeneity at the low temperature of 450 °C. It is also demonstrated that the MoS2 -based visible-light photodetector arrays are both fabricated on 4 inch SiO2 /Si wafer and polyimide films, revealing 100% active devices with a narrow photocurrent distribution and excellent mechanical durability. PMID:27119775

  6. MoS2 memristor with photoresistive switching

    PubMed Central

    Wang, Wei; Panin, Gennady N.; Fu, Xiao; Zhang, Lei; Ilanchezhiyan, P.; Pelenovich, Vasiliy O.; Fu, Dejun; Kang, Tae Won

    2016-01-01

    A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques. PMID:27492593

  7. MoS2 memristor with photoresistive switching.

    PubMed

    Wang, Wei; Panin, Gennady N; Fu, Xiao; Zhang, Lei; Ilanchezhiyan, P; Pelenovich, Vasiliy O; Fu, Dejun; Kang, Tae Won

    2016-01-01

    A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques. PMID:27492593

  8. MoS2 memristor with photoresistive switching

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Panin, Gennady N.; Fu, Xiao; Zhang, Lei; Ilanchezhiyan, P.; Pelenovich, Vasiliy O.; Fu, Dejun; Kang, Tae Won

    2016-08-01

    A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

  9. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  10. Radio Frequency Transistors and Circuits Based on CVD MoS2.

    PubMed

    Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

    2015-08-12

    We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications. PMID:26134588

  11. Chemisorption-induced n-doping of MoS2 by oxygen

    NASA Astrophysics Data System (ADS)

    Qi, Long; Wang, Ying; Shen, Lei; Wu, Yihong

    2016-02-01

    Both chemisorption and physisorption affect the electronic properties of two-dimensional materials, such as MoS2, but it remains a challenge to probe their respective roles experimentally. Through repeated in-situ electrical measurements of few-layer MoS2 field-effect transistors in an ultrahigh vacuum system with well-controlled oxygen partial pressure (6 × 10-8 mbar-3 × 10-7 mbar), we were able to study the effect of chemisorption on surface defects separately from physically adsorbed oxygen molecules. It is found that chemisorption of oxygen results in n-doping in the channel but negligible effect on mobility and on/off ratio of the MoS2 transistors. These results are in disagreement with the previous reports on p-doping and degradation of the device's performance when both chemisorption and physisorption are present. Through the analysis of adsorption-desorption kinetics and the first-principles calculations of electronic properties, we show that the experimentally observed n-doping effect originates from dissociative adsorption of oxygen at the surface defects of MoS2, which lowers the conduction band edge locally and makes the MoS2 channel more n-type-like as compared to the as-fabricated devices.

  12. Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators.

    PubMed

    Jia, Hao; Yang, Rui; Nguyen, Ariana E; Alvillar, Sahar Naghibi; Empante, Thomas; Bartels, Ludwig; Feng, Philip X-L

    2016-05-19

    We report the fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5-2 μm in diameter) offer fundamental resonances (f0) in the very high frequency (VHF) band (up to ∼120 MHz) and excellent figures-of-merit up to f0 × Q ≈ 3 × 10(10) Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ∼15 mN m(-1) in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials. PMID:27150738

  13. Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators

    NASA Astrophysics Data System (ADS)

    Jia, Hao; Yang, Rui; Nguyen, Ariana E.; Alvillar, Sahar Naghibi; Empante, Thomas; Bartels, Ludwig; Feng, Philip X.-L.

    2016-05-01

    We report the fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5-2 μm in diameter) offer fundamental resonances (f0) in the very high frequency (VHF) band (up to ~120 MHz) and excellent figures-of-merit up to f0 × Q ~ 3 × 1010 Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ~15 mN m-1 in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials.

  14. Effect of interfaces on electron transport properties of MoS2-Au Contacts

    NASA Astrophysics Data System (ADS)

    Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

    2014-03-01

    Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

  15. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Kim, Hakseong; Sung, Ji Ho; Lee, Myoung Jae; Seo, David H.; Lee, Sang Wook; Jo, Moon-Ho; Seo, Sunae

    2015-12-01

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using both single-layer MoS2 (1M) and 4-layer MoS2 (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS2-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS2-Ti, which resulted in VDS polarity dependence of device parameters such as threshold voltage (VTH) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μFE) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS2 thickness for both SG and BG contacts. Differential conductance (σd) of 1M increases with VDS irrespective of VDS polarity, while σd of 4M ceases monotonic growth at positive VDS values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σd saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  16. The spatial and logical organization of devices in an advanced industrial robot system

    NASA Technical Reports Server (NTRS)

    Ruoff, C. F.

    1980-01-01

    This paper describes the geometrical and device organization of a robot system which is based in part upon transformations of Cartesian frames and exchangeable device tree structures. It discusses coordinate frame transformations, geometrical device representation and solution degeneracy along with the data structures which support the exchangeable logical-physical device assignments. The system, which has been implemented in a minicomputer, supports vision, force, and other sensors. It allows tasks to be instantiated with logically equivalent devices and it allows tasks to be defined relative to appropriate frames. Since these frames are, in turn, defined relative other frames this organization provides a significant simplification in task specification and a high degree of system modularity.

  17. Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

  18. A one-step approach to the large-scale synthesis of functionalized MoS2 nanosheets by ionic liquid assisted grinding

    NASA Astrophysics Data System (ADS)

    Zhang, Wentao; Wang, Yanru; Zhang, Daohong; Yu, Shaoxuan; Zhu, Wenxin; Wang, Jing; Zheng, Fangqing; Wang, Shuaixing; Wang, Jianlong

    2015-05-01

    A prerequisite for exploiting most proposed applications for MoS2 is the availability of water-dispersible functionalized MoS2 nanosheets in large quantities. Here we report one-step synthesis and surface functionalization of MoS2 nanosheets by a facile ionic liquid assisted grinding method in the presence of chitosan. The selected ionic liquid with suitable surface energy could efficiently overcome the van der Waals force between the MoS2 layers. Meanwhile, chitosan molecules bind to the plane of MoS2 sheets non-covalently, which prevents the reassembling of exfoliated MoS2 sheets and facilitates the exfoliation progress. The obtained chitosan functionalized MoS2 nanosheets possess favorable stability and biocompatibility, which renders them as promising and biocompatible near-infrared agents for photothermal ablation of cancer. This contribution provides a facile way for the green, one-step and large-scale synthesis of advanced functional MoS2 materials.A prerequisite for exploiting most proposed applications for MoS2 is the availability of water-dispersible functionalized MoS2 nanosheets in large quantities. Here we report one-step synthesis and surface functionalization of MoS2 nanosheets by a facile ionic liquid assisted grinding method in the presence of chitosan. The selected ionic liquid with suitable surface energy could efficiently overcome the van der Waals force between the MoS2 layers. Meanwhile, chitosan molecules bind to the plane of MoS2 sheets non-covalently, which prevents the reassembling of exfoliated MoS2 sheets and facilitates the exfoliation progress. The obtained chitosan functionalized MoS2 nanosheets possess favorable stability and biocompatibility, which renders them as promising and biocompatible near-infrared agents for photothermal ablation of cancer. This contribution provides a facile way for the green, one-step and large-scale synthesis of advanced functional MoS2 materials. Electronic supplementary information (ESI) available: The

  19. Electrochemical investigations of advanced materials for microelectronic and energy storage devices

    NASA Astrophysics Data System (ADS)

    Goonetilleke, Pubudu Chaminda

    A broad range of electrochemical techniques are employed in this work to study a selected set of advanced materials for applications in microelectronics and energy storage devices. The primary motivation of this study has been to explore the capabilities of certain modern electrochemical techniques in a number of emerging areas of material processing and characterization. The work includes both aqueous and non-aqueous systems, with applications in two rather general areas of technology, namely microelectronics and energy storage. The sub-systems selected for investigation are: (i) Electrochemical mechanical and chemical mechanical planarization (ECMP and CMP, respectively), (ii) Carbon nanotubes in combination with room temperature ionic liquids (ILs), and (iii) Cathode materials for high-performance Li ion batteries. The first group of systems represents an important building block in the fabrication of microelectronic devices. The second and third groups of systems are relevant for new energy storage technologies, and have generated immense interests in recent years. A common feature of these different systems is that they all are associated with complex surface reactions that dictate the performance of the devices based on them. Fundamental understanding of these reactions is crucial to further development and expansion of their associated technologies. It is the complex mechanistic details of these surface reactions that we address using a judicious combination of a number of state of the art electrochemical techniques. The main electrochemical techniques used in this work include: (i) Cyclic voltammetry (CV) and slow scan cyclic voltammetry (SSCV, a special case of CV); (ii) Galvanostatic (or current-controlled) measurements; (iii) Electrochemical impedance spectroscopy (EIS), based on two different methodologies, namely, Fourier transform EIS (FT-EIS, capable of studying fast reaction kinetics in a time-resolved mode), and EIS using frequency response

  20. Detecting Nano-Scale Vibrations in Rotating Devices by Using Advanced Computational Methods

    PubMed Central

    del Toro, Raúl M.; Haber, Rodolfo E.; Schmittdiel, Michael C.

    2010-01-01

    This paper presents a computational method for detecting vibrations related to eccentricity in ultra precision rotation devices used for nano-scale manufacturing. The vibration is indirectly measured via a frequency domain analysis of the signal from a piezoelectric sensor attached to the stationary component of the rotating device. The algorithm searches for particular harmonic sequences associated with the eccentricity of the device rotation axis. The detected sequence is quantified and serves as input to a regression model that estimates the eccentricity. A case study presents the application of the computational algorithm during precision manufacturing processes. PMID:22399918

  1. Detecting nano-scale vibrations in rotating devices by using advanced computational methods.

    PubMed

    del Toro, Raúl M; Haber, Rodolfo E; Schmittdiel, Michael C

    2010-01-01

    This paper presents a computational method for detecting vibrations related to eccentricity in ultra precision rotation devices used for nano-scale manufacturing. The vibration is indirectly measured via a frequency domain analysis of the signal from a piezoelectric sensor attached to the stationary component of the rotating device. The algorithm searches for particular harmonic sequences associated with the eccentricity of the device rotation axis. The detected sequence is quantified and serves as input to a regression model that estimates the eccentricity. A case study presents the application of the computational algorithm during precision manufacturing processes. PMID:22399918

  2. Electrical and electronic devices and components: A compilation

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

  3. Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays.

    PubMed

    Chen, Mikai; Nam, Hongsuk; Rokni, Hossein; Wi, Sungjin; Yoon, Jeong Seop; Chen, Pengyu; Kurabayashi, Katsuo; Lu, Wei; Liang, Xiaogan

    2015-09-22

    MoS2 and other semiconducting transition metal dichalcogenides (TMDCs) are of great interest due to their excellent physical properties and versatile chemistry. Although many recent research efforts have been directed to explore attractive properties associated with MoS2 monolayers, multilayer/few-layer MoS2 structures are indeed demanded by many practical scale-up device applications, because multilayer structures can provide sizable electronic/photonic state densities for driving upscalable electrical/optical signals. Currently there is a lack of processes capable of producing ordered, pristine multilayer structures of MoS2 (or other relevant TMDCs) with manufacturing-grade uniformity of thicknesses and electronic/photonic properties. In this article, we present a nanoimprint-based approach toward addressing this challenge. In this approach, termed as nanoimprint-assisted shear exfoliation (NASE), a prepatterned bulk MoS2 stamp is pressed into a polymeric fixing layer, and the imprinted MoS2 features are exfoliated along a shear direction. This shear exfoliation can significantly enhance the exfoliation efficiency and thickness uniformity of exfoliated flakes in comparison with previously reported exfoliation processes. Furthermore, we have preliminarily demonstrated the fabrication of multiple transistors and biosensors exhibiting excellent device-to-device performance consistency. Finally, we present a molecular dynamics modeling analysis of the scaling behavior of NASE. This work holds significant potential to leverage the superior properties of MoS2 and other emerging TMDCs for practical scale-up device applications. PMID:26302003

  4. Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing.

    PubMed

    Zhang, Dongzhi; Sun, Yan'e; Li, Peng; Zhang, Yong

    2016-06-01

    An ultrasensitive humidity sensor based on molybdenum-disulfide- (MoS2)-modified tin oxide (SnO2) nanocomposite has been demonstrated in this work. The nanostructural, morphological, and compositional properties of an as-prepared MoS2/SnO2 nanocomposite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectrometry (EDS), nitrogen sorption analysis, and Raman spectroscopy, which confirmed its successful preparation and rationality. The sensing characteristics of the MoS2/SnO2 hybrid film device against relative humidity (RH) were investigated at room temperature. The RH sensing results revealed an unprecedented response, ultrafast response/recovery behaviors, and outstanding repeatability. To our knowledge, the sensor response yielded in this work was tens of times higher than that of the existing humidity sensors. Moreover, the MoS2/SnO2 hybrid nanocomposite film sensor exhibited great enhancement in humidity sensing performances as compared to the pure MoS2, SnO2, and graphene counterparts. Furthermore, complex impedance spectroscopy and bode plots were employed to understand the underlying sensing mechanisms of the MoS2/SnO2 nanocomposite toward humidity. The synthesized MoS2/SnO2 hybrid composite was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications. PMID:27192399

  5. Advanced biosensing methodologies developed for evaluating performance quality and safety of emerging biophotonics technologies and medical devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Ilev, Ilko K.; Walker, Bennett; Calhoun, William; Hassan, Moinuddin

    2016-03-01

    Biophotonics is an emerging field in modern biomedical technology that has opened up new horizons for transfer of state-of-the-art techniques from the areas of lasers, fiber optics and biomedical optics to the life sciences and medicine. This field continues to vastly expand with advanced developments across the entire spectrum of biomedical applications ranging from fundamental "bench" laboratory studies to clinical patient "bedside" diagnostics and therapeutics. However, in order to translate these technologies to clinical device applications, the scientific and industrial community, and FDA are facing the requirement for a thorough evaluation and review of laser radiation safety and efficacy concerns. In many cases, however, the review process is complicated due the lack of effective means and standard test methods to precisely analyze safety and effectiveness of some of the newly developed biophotonics techniques and devices. There is, therefore, an immediate public health need for new test protocols, guidance documents and standard test methods to precisely evaluate fundamental characteristics, performance quality and safety of these technologies and devices. Here, we will overview our recent developments of novel test methodologies for safety and efficacy evaluation of some emerging biophotonics technologies and medical devices. These methodologies are based on integrating the advanced features of state-of-the-art optical sensor technologies and approaches such as high-resolution fiber-optic sensing, confocal and optical coherence tomography imaging, and infrared spectroscopy. The presentation will also illustrate some methodologies developed and implemented for testing intraocular lens implants, biochemical contaminations of medical devices, ultrahigh-resolution nanoscopy, and femtosecond laser therapeutics.

  6. Experimental investigation of a double-diffused MOS structure

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.

    1976-01-01

    Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

  7. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    NASA Astrophysics Data System (ADS)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  8. Shielded silicon gate complementary MOS integrated circuit.

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.; Hayes, P. J.

    1972-01-01

    An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

  9. Design and Evaluation of a Water Recirculation Loop Maintenance Device for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2012-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high-capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit Transport Water Loop. The bed design further leverages a sorbent developed for the ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System. The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of crewed spaceflight Environmental Control and Life Support System hardware.

  10. Performance of a Water Recirculation Loop Maintenance Device and Process for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2013-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The bed design further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware.

  11. Design and Evaluation of a Water Recirculation Loop Maintenance Device for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2011-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The bed design further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a clear demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware.

  12. Performance of a Water Recirculation Loop Maintenance Device and Process for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Rector, Tony; Steele, John W.; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2012-01-01

    A water loop maintenance device and process to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been undergoing a performance evaluation. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the water recirculation maintenance device and process is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The maintenance process further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware. This

  13. Device therapy in advanced heart failure: what to put in and what to turn off: remote telemonitoring and implantable hemodynamic devices for advanced heart failure monitoring in the ambulatory setting and the evolving role of cardiac resynchronization therapy.

    PubMed

    Smith, Sakima A; Abraham, William T

    2011-01-01

    Despite evidence based medical and pharmacologic advances the management of heart failure remains challenging, especially in the ambulatory setting. There is an urgent need to develop strategies to reduce hospitalizations and re-admission rates for heart failure in general. This focused review illustrates the potential role for remote telemonitoring and implantable hemodynamic devices to address this significant issue. We also explore the growth of cardiac resynchronization therapy and how it has evolved into another tool in our armamentarium for hemodynamic monitoring. PMID:21906246

  14. Indirect-direct bandgap transition and gap width tuning in bilayer MoS2 superlattices

    NASA Astrophysics Data System (ADS)

    Jiang, J. T.; Xiu, S. L.; Zheng, M. M.; Jia, T. T.; Liu, H. Y.; Zhang, Y.; Chen, G.

    2014-10-01

    Using the band-folding analysis and the first-principles method, we have carefully studied the electronic properties of the bilayer MoS2 superlattices. In the (N,M) bilayer MoS2 superlattice, the bottom of the conduction band could be folded from K to Г points resulting in the direct bandgap semiconductor if both N and M are integer multiple of 3. Furthermore, the gap width could be tuned by the in-plane stretching and the perpendicular compressing. These studies could pave the path for designing the direct bandgap nanostructures and tuning their gap width toward the applications in the high-performance photoelectronic devices.

  15. Development, Field Test, and Refinement of Performance Training Programs in Armor Advanced Individual Training. Final Report.

    ERIC Educational Resources Information Center

    Young, Douglas L.; Taylor, John E.

    Performance-oriented instruction was developed, field tested, and refined in two Advanced Individual Training (AIT) programs--Armor Reconnaissance Specialist (MOS 11D) and Armor Crewman (MOS 11E). Tasks for both MOS (Military Occupational Specialty) were inventoried and the inventories were reduced by eliminating those tasks which are not required…

  16. ESD protection design for advanced CMOS

    NASA Astrophysics Data System (ADS)

    Huang, Jin B.; Wang, Gewen

    2001-10-01

    ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

  17. Mechanically delaminated few layered MoS2 nanosheets based high performance wire type solid-state symmetric supercapacitors

    NASA Astrophysics Data System (ADS)

    Krishnamoorthy, Karthikeyan; Pazhamalai, Parthiban; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

    2016-07-01

    Two dimensional nanostructures are increasingly used as electrode materials in flexible supercapacitors for portable electronic applications. Herein, we demonstrated a ball milling approach for achieving few layered molybdenum disulfide (MoS2) via exfoliation from their bulk. Physico-chemical characterizations such as X-ray diffraction, field emission scanning electron microscope, and laser Raman analyses confirmed the occurrence of exfoliated MoS2 sheets with few layers from their bulk via ball milling process. MoS2 based wire type solid state supercapacitors (WSCs) are fabricated and examined using cyclic voltammetry (CV), electrochemical impedance spectroscopy, and galvanostatic charge discharge (CD) measurements. The presence of rectangular shaped CV curves and symmetric triangular shaped CD profiles suggested the mechanism of charge storage in MoS2 WSC is due to the formation of electrochemical double layer capacitance. The MoS2 WSC device delivered a specific capacitance of 119 μF cm-1, and energy density of 8.1 nW h cm-1 with better capacitance retention of about 89.36% over 2500 cycles, which ensures the use of the ball milled MoS2 for electrochemical energy storage devices.

  18. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.

    PubMed

    Yu, Yifei; Li, Chun; Liu, Yi; Su, Liqin; Zhang, Yong; Cao, Linyou

    2013-01-01

    Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields including field effect transistors, low power switches, optoelectronics, and spintronics. However, device development with 2D MoS2 has been delayed by the lack of capabilities to produce large-area, uniform, and high-quality MoS2 monolayers. Here we present a self-limiting approach that can grow high quality monolayer and few-layer MoS2 films over an area of centimeters with unprecedented uniformity and controllability. This approach is compatible with the standard fabrication process in semiconductor industry. It paves the way for the development of practical devices with 2D MoS2 and opens up new avenues for fundamental research. PMID:23689610

  19. Insertion device and beam line plans for the Advanced Photon Source: A report and recommendations by the Insertion Device and Beam Line Planning Committee

    SciTech Connect

    Not Available

    1988-02-01

    In the 7-GeV Advanced Photon Source (APS) Conceptual Design Report (CDR), fifteen complete experimental beam lines were specified in order to establish a representative technical and cost base for the components involved. In order to optimize the composition of the insertion devices and the beam line, these funds are considered a ''Trust Fund.'' The present report evaluates the optimization for the distribution of these funds so that the short- and long-term research programs will be most productive, making the facility more attractive from the user's point of view. It is recommended that part of the ''Trust Fund'' be used for the construction of the insertion devices, the front-end components, and the first-optics, minimizing the cost to potential users of completing a beam line. In addition, the possibility of cost savings resulting from replication and standardization of high multiplicity components (such as IDs, front ends, and first-optics instrumentation) is addressed. 2 refs., 5 tabs.

  20. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.

    PubMed

    Lin, Yu-Kai; Chen, Ruei-San; Chou, Tsu-Chin; Lee, Yi-Hsin; Chen, Yang-Fang; Chen, Kuei-Hsien; Chen, Li-Chyong

    2016-08-31

    The thickness-dependent surface states of MoS2 thin films grown by the chemical vapor deposition process on the SiO2-Si substrates are investigated by X-ray photoelectron spectroscopy. Raman and high-resolution transmission electron microscopy suggest the thicknesses of MoS2 films to be ranging from 3 to 10 layers. Both the core levels and valence band edges of MoS2 shift downward ∼0.2 eV as the film thickness increases, which can be ascribed to the Fermi level variations resulting from the surface states and bulk defects. Grainy features observed from the atomic force microscopy topographies, and sulfur-vacancy-induced defect states illustrated at the valence band spectra imply the generation of surface states that causes the downward band bending at the n-type MoS2 surface. Bulk defects in thick MoS2 may also influence the Fermi level oppositely compared to the surface states. When Au contacts with our MoS2 thin films, the Fermi level downshifts and the binding energy reduces due to the hole-doping characteristics of Au and easy charge transfer from the surface defect sites of MoS2. The shift of the onset potentials in hydrogen evolution reaction and the evolution of charge-transfer resistances extracted from the impedance measurement also indicate the Fermi level varies with MoS2 film thickness. The tunable Fermi level and the high chemical stability make our MoS2 a potential catalyst. The observed thickness-dependent properties can also be applied to other transition-metal dichalcogenides (TMDs), and facilitates the development in the low-dimensional electronic devices and catalysts. PMID:27488185

  1. Recent Advances in Transcatheter Aortic Valve Implantation: Novel Devices and Potential Shortcomings

    PubMed Central

    Blumenstein, J.; Liebetrau, C.; Linden, A. Van; Moellmann, H.; Walther, T.; Kempfert, J.

    2013-01-01

    During the past years transcatheter aortic valve implantation (TAVI) has evolved to a standard technique for the treatment of high risk patients suffering from severe aortic stenosis. Worldwide the number of TAVI procedures is increasing exponentially. In this context both the transapical antegrade (TA) and the transfemoral retrograde (TF) approach are predominantly used and can be considered as safe and reproducible access sites for TAVI interventions. As a new technology TAVI is in a constant progress regarding the development of new devices. While in the first years only the Edwards SAPIEN™ and the Medtronic CoreValve™ prostheses were commercial available, recently additional devices obtained CE-mark approval and others have entered initial clinical trials. In addition to enhance the treatment options in general, the main driving factor to further develop new device iterations is to solve the drawbacks of the current TAVI systems: paravalvular leaks, occurrence of AV-blocks and the lack of full repositionability. PMID:24313644

  2. Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine

    NASA Astrophysics Data System (ADS)

    Pak, Jinsu; Jang, Jingon; Cho, Kyungjune; Kim, Tae-Young; Kim, Jae-Keun; Song, Younggul; Hong, Woong-Ki; Min, Misook; Lee, Hyoyoung; Lee, Takhee

    2015-11-01

    Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared with the pristine MoS2 FETs, caused by more electron-hole pairs separation at the p-n interface. Furthermore, we found the optimized CuPc thickness (~2 nm) on the MoS2 surface for the best performance as a photodetector with a photoresponsivity of ~1.98 A W-1, a detectivity of ~6.11 × 1010 Jones, and an external quantum efficiency of ~12.57%. Our study suggests that the MoS2 vertical hybrid structure with organic material can be promising as efficient photodetecting devices and optoelectronic circuits.Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared

  3. Reduced Dielectric Screening and Enhanced Energy Transfer in Single- and Few-Layer MoS2

    NASA Astrophysics Data System (ADS)

    Prins, Ferry; Goodman, Aaron J.; Tisdale, William A.

    2014-11-01

    We report highly efficient non-radiative energy transfer from cadmium selenide (CdSe) quantum dots to monolayer and few-layer molybdenum disulfide (MoS2). The quenching of the donor quantum dot photoluminescence increases as the MoS2 flake thickness decreases, with the highest efficiency (>95%) observed for monolayer MoS2. This counterintuitive result arises from reduced dielectric screening in thin layer semiconductors having unusually large permittivity and a strong in-plane transition dipole moment, as found in MoS2. Excitonic energy transfer between a 0D emitter and a 2D absorber is fundamentally interesting and enables a wide range of applications including broadband optical down-conversion, optical detection, photovoltaic sensitization, and color shifting in light-emitting devices.

  4. Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.

    PubMed

    Prins, Ferry; Goodman, Aaron J; Tisdale, William A

    2014-11-12

    We report highly efficient nonradiative energy transfer from cadmium selenide (CdSe) quantum dots to monolayer and few-layer molybdenum disulfide (MoS2). The quenching of the donor quantum dot photoluminescence increases as the MoS2 flake thickness decreases with the highest efficiency (>95%) observed for monolayer MoS2. This counterintuitive result arises from reduced dielectric screening in thin layer semiconductors having unusually large permittivity and a strong in-plane transition dipole moment, as found in MoS2. Excitonic energy transfer between a zero-dimensional emitter and a two-dimensional absorber is fundamentally interesting and enables a wide range of applications including broadband optical down-conversion, optical detection, photovoltaic sensitization, and color shifting in light-emitting devices. PMID:25289461

  5. Hierarchical MoS2 Nanosheet@TiO2 Nanotube Array Composites with Enhanced Photocatalytic and Photocurrent Performances.

    PubMed

    Zheng, Lingxia; Han, Sancan; Liu, Hui; Yu, Pingping; Fang, Xiaosheng

    2016-03-01

    A novel type of hierarchical nanocomposites consisted of MoS2 nanosheet coating on the self-ordered TiO2 nanotube arrays is successfully prepared by a facile combination of anodization and hydrothermal methods. The MoS2 nanosheets are uniformly decorated on the tube top surface and the intertubular voids with film appearance changing from brown to black color. Anatase TiO2 nanotube arrays (NTAs) with clean top surfaces and the appropriate amount of MoS2 precursors are key to the growth of perfect compositing TiO2 @MoS2 hybrids with significantly enhanced photocatalytic activity and photocurrent response. These results reveal that the strategy provides a flexible and straightforward route for design and preparation nanocomposites based on functional semiconducting nanostructures with 1D self-ordered TiO2 NTAs, promising for new opportunities in energy/environment applications, including photocatalysts and other photovoltaic devices. PMID:26800247

  6. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    SciTech Connect

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  7. Advanced digital subtraction angiography and MR fusion imaging protocol applied to accurate placement of flow diverter device.

    PubMed

    Faragò, Giuseppe; Caldiera, Valentina; Tempra, Giovanni; Ciceri, Elisa

    2016-02-01

    In recent years there has been a progressive increase in interventional neuroradiology procedures, partially due to improvements in devices, but also to the simultaneous development of technologies and radiological images. Cone beam CT (Dyna-CT; Siemens) is a method recently used to obtain pseudo CT images from digital subtraction angiography (DSA) with a flat panel detector. Using dedicated software, it is then possible to merge Dyna-CT images with images from a different source. We report here the usefulness of advanced DSA techniques (Syngo-Dyna CT, three-dimensional DSA iPilot) for the treatment of an intracranial aneurysm with a flow diverter device. Merging MR and Dyna-CT images at the end of the procedure proved to be a simple and rapid additional method of verifying the success of the intervention. PMID:25589548

  8. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

    PubMed Central

    Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

    2009-01-01

    In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

  9. Behavioral model and simulator for the Multi-slit Optimized Spectrometer (MOS)

    NASA Astrophysics Data System (ADS)

    Tufillaro, Nicholas; Davis, Curtiss O.; Valle, Tim; Good, William; Stephens, Michelle; Spuhler, Peter

    2013-09-01

    The Multi-Slit Optimized Spectrometer (MOS) is a NASA funded Instrument Incubator Program (IIP) to advance an innovative dispersive spectrometer concept in support of the GEO-CAPE ocean science mission. As part of the instruments design and testing, we constructed a `behavioral model' of the instrument's optical engine which allows an end-to-end simulation from input radiances to nal product maps. Here we describe the model used for a rapid, but realistic, simulation of the MOS optical engine, and give illustrative examples of quantitatively tracking errors in the imaging chain from input radiances to bounds on nal product errors.

  10. Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy.

    PubMed

    Huang, Shengxi; Ling, Xi; Liang, Liangbo; Kong, Jing; Terrones, Humberto; Meunier, Vincent; Dresselhaus, Mildred S

    2014-10-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for optoelectronic devices due to its strong photoluminescence emission. In this work, the photoluminescence of twisted bilayer MoS2 is investigated, revealing a tunability of the interlayer coupling of bilayer MoS2. It is found that the photoluminescence intensity ratio of the trion and exciton reaches its maximum value for the twisted angle 0° or 60°, while for the twisted angle 30° or 90° the situation is the opposite. This is mainly attributed to the change of the trion binding energy. The first-principles density functional theory analysis further confirms the change of the interlayer coupling with the twisted angle, which interprets our experimental results. PMID:25171263

  11. Controlled Exfoliation of MoS2 Crystals into Trilayer Nanosheets.

    PubMed

    Fan, Xiaobin; Xu, Pengtao; Li, Yuguang C; Zhou, Dekai; Sun, Yifan; Nguyen, Minh An T; Terrones, Mauricio; Mallouk, Thomas E

    2016-04-20

    The controlled exfoliation of transition metal dichalcogenides (TMDs) into pristine single- or few-layer nanosheets remains a significant barrier to fundamental studies and device applications of TMDs. Here we report a novel strategy for exfoliating crystalline MoS2 into suspensions of nanosheets with retention of the semiconducting 2H phase. The controlled reaction of MoS2 with substoichiometric amounts n-butyllithium results in intercalation of the edges of the crystals, which are then readily exfoliated in a 45 vol % ethanol-water solution. Surprisingly, the resulting colloidal suspension of nanosheets was found (by electron microscopy and atomic force microscopy) to consist mostly of trilayers. The efficiency of exfoliation of the pre-intercalated sample is increased by at least 1 order of magnitude relative to the starting MoS2 microcrystals, with a mass yield of the dispersed nanosheets of 11-15%. PMID:27031870

  12. Nanostructured MoS2 Nanorose/Graphene Nanoplatelet Hybrids for Electrocatalysis.

    PubMed

    Chua, Chun Kiang; Loo, Adeline Huiling; Pumera, Martin

    2016-04-18

    Tailoring and enhancing electrocatalytic activity is of the utmost importance from the viewpoints of sustainable energy and sensing. MoS2 and graphene show great promise for the electrocatalysis of many reactions. Given that both graphene and MoS2 are highly anisotropic in nature, with edge planes that are several orders of magnitude more catalytically active than basal planes, a new hybrid material with maximized edge-plane density to provide efficient electron transfer, high catalytic activity, and conductive cores was engineered. The hybrid material consists of radial MoS2 nanosheets with a high density of edge planes and unsaturated active sulfur atoms as well as interspersed with conductive graphene nanoplatelets. This hybrid material exhibits excellent activity for the hydrogen evolution reaction and the detection of DNA nucleobases. Such a nanoengineered, nanostructured hybrid material may play a major role in future electrocatalytic devices. PMID:26968591

  13. Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

    PubMed

    Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

    2008-10-01

    Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. PMID:18778107

  14. Coulomb blockade in monolayer MoS2 single electron transistor.

    PubMed

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-31

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. PMID:27001412

  15. Interface properties of CVD grown graphene transferred onto MoS2(0001)

    NASA Astrophysics Data System (ADS)

    Coy Diaz, Horacio; Addou, Rafik; Batzill, Matthias

    2013-12-01

    Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 as a potential building block for entirely 2D-material based semiconducting devices. We show that solution transfer results in water trapping at the interface which may be removed by annealing to ~300 °C in a vacuum. After removal of the water, by high temperature annealing, ultraflat graphene is obtained on MoS2 with only a very weak moiré pattern observable in scanning tunneling microscopy images due to lattice mismatch and random alignment of graphene with respect to the MoS2 substrate. Photoemission spectroscopy indicates interface dipole formation, p-type doping of graphene by ~0.09 eV downward shift of the Fermi-level below the Dirac point, and a negative space charge region in bulk MoS2. Interestingly, valence band spectra of the graphene covered MoS2 surface indicate a band gap narrowing of the MoS2 surface by ~0.1 eV. This band gap reduction at the surface is further evidence that interlayer van der Waals interactions critically influence the band structure of 2D-layered dichalcogenides and suggest that interfacing with dissimilar van der Waals materials allows tuning of their electronic properties.Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 as a potential building block for entirely 2D-material based semiconducting

  16. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    NASA Astrophysics Data System (ADS)

    Hong, Young Ki; Yoo, Geonwook; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Yoo, Byungwook; Ju, Sanghyun; Kim, Sunkook; Oh, Min Suk

    2016-05-01

    Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  17. Electronic Structure and Luminescence of Quasi-Freestanding MoS2 Nanopatches on Au(111).

    PubMed

    Krane, Nils; Lotze, Christian; Läger, Julia M; Reecht, Gaël; Franke, Katharina J

    2016-08-10

    Monolayers of transition metal dichalcogenides are interesting materials for optoelectronic devices due to their direct electronic band gaps in the visible spectral range. Here, we grow single layers of MoS2 on Au(111) and find that nanometer-sized patches exhibit an electronic structure similar to their freestanding analogue. We ascribe the electronic decoupling from the Au substrate to the incorporation of vacancy islands underneath the intact MoS2 layer. Excitation of the patches by electrons from the tip of a scanning tunneling microscope leads to luminescence of the MoS2 junction and reflects the one-electron band structure of the quasi-freestanding layer. PMID:27459588

  18. Electronic Structure and Luminescence of Quasi-Freestanding MoS2 Nanopatches on Au(111)

    PubMed Central

    2016-01-01

    Monolayers of transition metal dichalcogenides are interesting materials for optoelectronic devices due to their direct electronic band gaps in the visible spectral range. Here, we grow single layers of MoS2 on Au(111) and find that nanometer-sized patches exhibit an electronic structure similar to their freestanding analogue. We ascribe the electronic decoupling from the Au substrate to the incorporation of vacancy islands underneath the intact MoS2 layer. Excitation of the patches by electrons from the tip of a scanning tunneling microscope leads to luminescence of the MoS2 junction and reflects the one-electron band structure of the quasi-freestanding layer. PMID:27459588

  19. Strain effects on electronic states and lattice vibration of monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Miao, Ya-ping; Ma, Fei; Huang, Yu-hong; Xu, Ke-wei

    2015-07-01

    First-principle calculations are done to study the electronic states and lattice vibration of monolayer MoS2 under tensile strain. It is found that the band gap decreases with the strain, which is consistent with the experimental results measured by photoluminescence and adsorption spectra. The decreased band gap can be ascribed to the strain-sensitive π bond-like interaction between interlayers. As a result of lowered crystal symmetry, the degenerate E‧ mode is split into two modes and some new modes are induced. The frequency shift of the E‧ modes is different for the case under uniaxial and biaxial tensile strain. Hence, the electronic and optical properties of MoS2 should change with strain significantly. Accordingly, the performances of MoS2 based electronic/photoelectric devices can be optimized; and even new sensors might be designed to detect pressure.

  20. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

    NASA Astrophysics Data System (ADS)

    Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K.; Rinzan, Mohamed; Liu, Amy Y.; Paranjape, Makarand; Barbara, Paola

    2013-04-01

    Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.

  1. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

    NASA Astrophysics Data System (ADS)

    Boyd, Anthony; Fontana, Marcio; Deppe, Tristan; Rinzan, Mohamed; Liu, Amy; Paranjape, Makarand; Barbara, Paola

    2013-03-01

    Atomically thin molybdenum disulfide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated..., transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect. Work Funded by NSF, DMR 1008242.

  2. Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

    PubMed Central

    Lee, Kevin C. J.; Chen, Yi-Huan; Lin, Hsiang-Yu; Cheng, Chia-Chin; Chen, Pei-Ying; Wu, Ting-Yi; Shih, Min-Hsiung; Wei, Kung-Hwa; Li, Lain-Jong; Chang, Chien-Wen

    2015-01-01

    The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems. PMID:26576041

  3. Ripples near edge terminals in MoS2 few layers and pyramid nanostructures

    NASA Astrophysics Data System (ADS)

    Mills, Adam; Yu, Yifei; Chen, Chuanhui; Huang, Bevin; Cao, Linyou; Tao, Chenggang

    2016-02-01

    Atomically thin transition-metal dichalcogenides are of great interest due to their intriguing physical properties and potential applications. Here, we report our findings from scanning tunneling microscopy and spectroscopy investigations on molybdenum disulfide (MoS2) mono- to few-layers and pyramid nanostructures synthesized through chemical vapor deposition. On the few-layered MoS2 nanoplatelets grown on gallium nitride (GaN) and pyramid nanostructures on highly oriented pyrolytic graphite, we observed an intriguing curved region near the edge terminals. The measured band gap on these curved regions is 1.96 ± 0.10 eV, consistent with the value of the direct band gap in MoS2 monolayers. The curved features near the edge terminals and the associated electronic properties may contribute to the catalytic behaviors of MoS2 nanostructures and have potential applications in future electronic devices and energy-related products based on MoS2 nanostructures.

  4. Trap-induced photoresponse of solution-synthesized MoS2.

    PubMed

    Lee, Youngbin; Yang, Jaehyun; Lee, Dain; Kim, Yong-Hoon; Park, Jin-Hong; Kim, Hyoungsub; Cho, Jeong Ho

    2016-04-28

    We investigated, for the first time, the photoresponse characteristics of solution-synthesized MoS2 phototransistors. The photoresponse of the solution-synthesized MoS2 phototransistor was solely determined by the interactions of the photogenerated charge carriers with the surface adsorbates and the interface trap sites. Instead of contributing to the photocurrent, the illumination-generated electron-hole pairs were captured in the trap sites (surface and interface sites) due to the low carrier mobility of the solution-synthesized MoS2. The photogenerated holes discharged ions (oxygen and/or water) adsorbed onto the MoS2 surface and were released as neutral molecules. At the same time, the photogenerated electrons filled the traps present at the interface with the underlying substrate during their transport to the drain electrode. The filled trap sites significantly relieved the band bending near the surface region, which resulted in both a negative shift in the turn-on voltage and an increase in the photocurrent. The time-dependent dynamics of the solution-synthesized MoS2 phototransistors revealed persistent photoconductance due to the trapped electrons at the interface. The photoconductance was recovered by applying a short positive gate pulse. The instantaneous discharge of the trapped electrons dramatically reduced the relaxation time to less than 20 ms. This study provides an important clue to understanding the photoresponses of various optoelectronic devices prepared using solution-synthesized two-dimensional nanomaterials. PMID:27075554

  5. Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

    PubMed Central

    Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

    2015-01-01

    Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application. PMID:25676089

  6. Electrical control of the valley Hall effect in bilayer MoS2 transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jieun; Mak, Kin Fai; Shan, Jie

    2016-05-01

    The valley degree of freedom of electrons in solids has been proposed as a new type of information carrier, beyond the electron charge and spin. The potential of two-dimensional semiconductor transition metal dichalcogenides in valley-based electronic and optoelectronic applications has recently been illustrated through experimental demonstrations of the optical orientation of the valley polarization and of the valley Hall effect in monolayer MoS2. However, the valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, cannot be easily tuned, which presents a challenge for the development of valley-based applications. Here, we show that the valley Hall effect in bilayer MoS2 transistors can be controlled with a gate voltage. The gate applies an electric field perpendicular to the plane of the material, breaking the inversion symmetry present in bilayer MoS2. The valley polarization induced by the longitudinal electrical current was imaged with Kerr rotation microscopy. The polarization was found to be present only near the edges of the device channel with opposite sign for the two edges, and was out-of-plane and strongly dependent on the gate voltage. Our observations are consistent with symmetry-dependent Berry curvature and valley Hall conductivity in bilayer MoS2.

  7. Electrical control of the valley Hall effect in bilayer MoS2 transistors.

    PubMed

    Lee, Jieun; Mak, Kin Fai; Shan, Jie

    2016-05-01

    The valley degree of freedom of electrons in solids has been proposed as a new type of information carrier, beyond the electron charge and spin. The potential of two-dimensional semiconductor transition metal dichalcogenides in valley-based electronic and optoelectronic applications has recently been illustrated through experimental demonstrations of the optical orientation of the valley polarization and of the valley Hall effect in monolayer MoS2. However, the valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, cannot be easily tuned, which presents a challenge for the development of valley-based applications. Here, we show that the valley Hall effect in bilayer MoS2 transistors can be controlled with a gate voltage. The gate applies an electric field perpendicular to the plane of the material, breaking the inversion symmetry present in bilayer MoS2. The valley polarization induced by the longitudinal electrical current was imaged with Kerr rotation microscopy. The polarization was found to be present only near the edges of the device channel with opposite sign for the two edges, and was out-of-plane and strongly dependent on the gate voltage. Our observations are consistent with symmetry-dependent Berry curvature and valley Hall conductivity in bilayer MoS2. PMID:26809056

  8. Ab Initio Study of Quasiparticle and Excitonic Properties of MoS2

    NASA Astrophysics Data System (ADS)

    Qiu, Diana; Jornada, Felipe; Louie, Steven

    2013-03-01

    MoS2 is a layered, transition-metal dichalcogenide that can be cleaved into single-layer sheets, in a manner similar to graphene. Monolayer MoS2 has a direct band gap, strong spin-orbit coupling and strongly enhanced photoluminescence, compared with the bulk. MoS2's interesting electronic and optical properties mean that it could have many applications in single-layer electronic devices, but on the theoretical level, when many-electron interaction effects are included, there is still some uncertainty about the quasiparticle and excitonic properties of MoS2. We use first-principles calculations to study the quasiparticle band structure and optical absorption spectrum of MoS2 at the GW +BSE level. We include spin-orbit coupling as a perturbation either before or after the GW calculation of the band structure, and we demonstrate that our calculations are fully converged with respect to the dielectric cutoff and summation over empty bands. This work was supported by NSF grant No. DMR10-1006184 and U.S. DOE under Contract No. DE-AC02-05CH11231. Computational resources have been provided by NERSC.

  9. Single-layer MoS2 nanopores as nanopower generators.

    PubMed

    Feng, Jiandong; Graf, Michael; Liu, Ke; Ovchinnikov, Dmitry; Dumcenco, Dumitru; Heiranian, Mohammad; Nandigana, Vishal; Aluru, Narayana R; Kis, Andras; Radenovic, Aleksandra

    2016-08-11

    Making use of the osmotic pressure difference between fresh water and seawater is an attractive, renewable and clean way to generate power and is known as 'blue energy'. Another electrokinetic phenomenon, called the streaming potential, occurs when an electrolyte is driven through narrow pores either by a pressure gradient or by an osmotic potential resulting from a salt concentration gradient. For this task, membranes made of two-dimensional materials are expected to be the most efficient, because water transport through a membrane scales inversely with membrane thickness. Here we demonstrate the use of single-layer molybdenum disulfide (MoS2) nanopores as osmotic nanopower generators. We observe a large, osmotically induced current produced from a salt gradient with an estimated power density of up to 10(6) watts per square metre--a current that can be attributed mainly to the atomically thin membrane of MoS2. Low power requirements for nanoelectronic and optoelectric devices can be provided by a neighbouring nanogenerator that harvests energy from the local environment--for example, a piezoelectric zinc oxide nanowire array or single-layer MoS2 (ref. 12). We use our MoS2 nanopore generator to power a MoS2 transistor, thus demonstrating a self-powered nanosystem. PMID:27409806

  10. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fathipour, S.; Remskar, M.; Varlec, A.; Ajoy, A.; Yan, R.; Vishwanath, S.; Rouvimov, S.; Hwang, W. S.; Xing, H. G.; Jena, D.; Seabaugh, A.

    2015-01-01

    We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements, allowing the estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 103, and with current densities of 1.02 μA/μm and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.

  11. In situ MoS2 Decoration of Laser-Induced Graphene as Flexible Supercapacitor Electrodes.

    PubMed

    Clerici, Francesca; Fontana, Marco; Bianco, Stefano; Serrapede, Mara; Perrucci, Francesco; Ferrero, Sergio; Tresso, Elena; Lamberti, Andrea

    2016-04-27

    Herein, we are reporting a rapid one-pot synthesis of MoS2-decorated laser-induced graphene (MoS2-LIG) by direct writing of polyimide foils. By covering the polymer surface with a layer of MoS2 dispersion before processing, it is possible to obtain an in situ decoration of a porous graphene network during laser writing. The resulting material is a three-dimensional arrangement of agglomerated and wrinkled graphene flakes decorated by MoS2 nanosheets with good electrical properties and high surface area, suitable to be employed as electrodes for supercapacitors, enabling both electric double-layer and pseudo-capacitance behaviors. A deep investigation of the material properties has been performed to understand the chemical and physical characteristics of the hybrid MoS2-graphene-like material. Symmetric supercapacitors have been assembled in planar configuration exploiting the polymeric electrolyte; the resulting performances of the here-proposed material allow the prediction of the enormous potentialities of these flexible energy-storage devices for industrial-scale production. PMID:27035410

  12. Pressure induced effects on the electronic and optical properties of MoS2

    NASA Astrophysics Data System (ADS)

    Shang, Jimin; Zhang, Lamei; Cheng, Xuerui; Zhai, Fengxiao

    2015-10-01

    Using first-principles calculations, including Grimme D2 method for van der Waals interactions, we study the electronic and optical properties of molybdenum disulfide (MoS2) with the application of pressure. The calculated results show the dependences of the electronic and optical properties of the MoS2 on the applied pressure. The effects of van der Waals forces and the Mo-S strong covalent interaction under pressure are different. By contrast, the response of Mo-S covalent bond is more obvious under pressure, which results the CBM cross the Fermi energy firstly, and leads to the metallic state under high pressure. Furthermore, the dielectric function shows that the pressure has the obvious effect on the optical properties. With the incident light perpendicular to the c axis, the dielectric function both real and imaginary part will be shift to red, and the value of peak increases obviously, corresponding to the optical absorption will be enhancement. The conclusions provide a theoretical guidance to improve and optimize the devices performance of MoS2.

  13. Efficacy of mandibular advancement device in the treatment of obstructive sleep apnea syndrome: A randomized controlled crossover clinical trial

    PubMed Central

    Crovetto-Martínez, Rafael; Alkhraisat, Mohammad-Hamdan; Crovetto, Miguel; Municio, Antonio; Kutz, Ramón; Aizpuru, Felipe; Miranda, Erika; Anitua, Eduardo

    2015-01-01

    Background Evaluation of the efficacy and safety of a mandibular advancement device (MAD) (KlearwayTM) in the treatment of mild-to-moderate obstructive sleep apnea and chronic roncopathy. Material and Methods A randomized, placebo-controlled, double blinded, and crossover clinical trial was conducted. Placebo device (PD) defined as a splint in the centric occlusion that did not induce a mandibular advancement served as a control. The mandible was advanced to the maximum tolerable distance or to a minimum of 65% of the maximum protrusion. After each sequence of treatment, patients were assessed by questionnaires, conventional polysomnography, and objective measurement of snoring at the patient’s own home. Results Forty two patients participated in the study and 38 completed the study. Patients mean age was 46 ±9 years and the 79% were males. The mean mandibular advancement was 8.6 ±2.8 mm. Patients used the MAD and the PD for 6.4 +2.4 hours and 6.2 +2.0 hours, respectively. Secondary effects (mostly mild) occurred in the 85.7% and the 86.8% of the users of MAD and PD, respectively. The MAD induced a decrease in the apnea-hypopnea index (AHI) from 15.3 +10.2 to 11.9 +15.5. The 50% reduction in the AHI was achieved in the 46.2% and the 18.4% of the patients treated with MAD and PD, respectively. The use of the MAD induced a reduction in the AHI by 3.4 +15.9 while the PD induced an increase by 10.6 +26.1. The subjective evaluation of the roncopathy indicated an improvement by the MAD and an increase in the perceptive quality of sleep. However, the objective evaluation of the roncopathy did not show significant improvements. Conclusions The use of MAD is efficient to reduce the AHI and improve subjectively the roncopathy. MAD could be considered in the treatment of mild-to-moderate OSA and chronic roncopathy. Key words:Obstructive sleep apnea (OSA), mandibular advance device, treatment, efficacy, clinical assay. PMID:26241460

  14. Advanced laser-based tracking device for motor vehicle lane position monitoring and steering assistance

    NASA Astrophysics Data System (ADS)

    Bachalo, William D.; Inenaga, Andrew; Schuler, Carlos A.

    1995-12-01

    Aerometrics is developing an innovative laser-diode based device that provides a warning signal when a motor-vehicle deviates from the center of the lane. The device is based on a sensor that scans the roadway on either side of the vehicle and determines the lateral position relative to the existing painted lines marking the lane. No additional markings are required. A warning is used to alert the driver of excessive weaving or unanticipated departure from the center of the lane. The laser beams are at invisible wavelengths to that operation of the device does not pose a distraction to the driver or other motorists: When appropriate markers are not present on the road, the device is capable of detecting this condition and warn the driver. The sensor system is expected to work well irrespective of ambient light levels, fog and rain. This sensor has enormous commercial potential. It could be marketed as an instrument to warn drivers that they are weaving, used as a research tool to monitor driving patterns, be required equipment for those previously convicted of driving under the influence, or used as a backup sensor for vehicle lateral position control. It can also be used in storage plants to guide robotic delivery vehicles. In this paper, the principles of operation of the sensor, and the results of Aerometrics ongoing testing will be presented.

  15. 76 FR 71982 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-21

    ... the Federal Register of August 8, 2011 (76 FR 48169). In the notice, FDA requested public comments.... 1061, Rockville, MD 20852. FOR FURTHER INFORMATION CONTACT: Raquel Peat, Center for Devices and..., ] MD 20993-0002, (301) 796-6218, email: raquel.peat@fda.hhs.gov . SUPPLEMENTARY INFORMATION:...

  16. SAW-grade SiO2 for advanced microfluidic devices

    NASA Astrophysics Data System (ADS)

    Winkler, Andreas; Menzel, Siegfried; Schmidt, Hagen

    2009-05-01

    Acoustoelectronic devices based on surface acoustic wave (SAW) technology are primarily used in radio frequency filters, delay lines, duplexers, amplifiers and RFID tags. Thereby, SAW's are excited at the surface of piezoelectric materials (e.g. Quartz, LiTaO3, LiNbO3) by an RF signal applied via interdigital transducers (IDTs)1. Novel SAW applications that emerged recently in the field of microfluidics such as the handling of minimum quantities of fluids or gases2,3 require a fluid compatible design approach, high power durability and long lifetime of the devices. However, conventional SAW devices with finger electrodes arranged on top of the chip surface experience acoustomigration damage4,5 at high power input and/or higher operating temperature leading to failure of the device. Additionally, inappropriate material systems or chip surface topography can limit their performance in microfluidic application. To overcome these limitations the electrodes can be buried in an acoustically suited ("SAW-grade") functional layer which moreover should be adjustable to the specific biotechnological task. Depending on the properties of this layer, it can suppress the acoustomigration impact6 and improve the power durability of the device. Also, a reduction of the thermally-induced frequency shift is possible7. The present paper describes a novel SAW based chip technology approach using a modular concept. Here, the electrodes are buried in surface polished SAW-grade SiO2 fabricated by means of reactive RF magnetron sputtering from a SiO2- target. This approach will be demonstrated for two different metallization systems based on Al or Cu thin films on 128° YX-LiNbO3 substrates. We also show the application of the SiO2-layer with respect to compensation of thermallyinduced frequency shift and bio /chemical surface modification. Investigations were carried out using atomic force microscopy, laser-pulse acoustic measurement, glow-discharge optical emission spectroscopy

  17. Percutaneous laser disc decompression (PLDD) update: focus on device and procedure advances.

    PubMed

    Choy, D S

    1993-08-01

    This discussion is an update on the U.S. advances in percutaneous laser disc decompression (PLDD). This report summarizes the knowledge that has been gained about the procedure, advances in technique, and increased information about the three lasers currently in use for PLDD: KTP, Nd:YAG, and holmium. A new surgical approach to the L5-S1 disc is described. It is concluded that PLDD has become an established procedure that will be more widely used because it is simple, effective, and reasonably safe. PMID:10146384

  18. Strong interlayer coupling mediated giant two-photon absorption in MoS e2 /graphene oxide heterostructure: Quenching of exciton bands

    NASA Astrophysics Data System (ADS)

    Sharma, Rituraj; Aneesh, J.; Yadav, Rajesh Kumar; Sanda, Suresh; Barik, A. R.; Mishra, Ashish Kumar; Maji, Tuhin Kumar; Karmakar, Debjani; Adarsh, K. V.

    2016-04-01

    A complex few-layer MoS e2 /graphene oxide (GO) heterostructure with strong interlayer coupling was prepared by a facile hydrothermal method. In this strongly coupled heterostructure, we demonstrate a giant enhancement of two-photon absorption that is in stark contrast to the reverse saturable absorption of a weakly coupled MoS e2 /GO heterostructure and saturable absorption of isolated MoS e2 . Spectroscopic evidence of our study indicates that the optical signatures of isolated MoS e2 and GO domains are significantly modified in the heterostructure, displaying a direct coupling of both domains. Furthermore, our first-principles calculations indicate that strong interlayer coupling between the layers dramatically suppresses the MoS e2 excitonic bands. We envision that our findings provide a powerful tool to explore different optical functionalities as a function of interlayer coupling, which may be essential for the development of device technologies.

  19. Coulomb blockade in monolayer MoS2 single electron transistor

    NASA Astrophysics Data System (ADS)

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-01

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals.Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08954a

  20. Interface properties of CVD grown graphene transferred onto MoS2(0001).

    PubMed

    Coy Diaz, Horacio; Addou, Rafik; Batzill, Matthias

    2014-01-21

    Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 as a potential building block for entirely 2D-material based semiconducting devices. We show that solution transfer results in water trapping at the interface which may be removed by annealing to ~300 °C in a vacuum. After removal of the water, by high temperature annealing, ultraflat graphene is obtained on MoS2 with only a very weak moiré pattern observable in scanning tunneling microscopy images due to lattice mismatch and random alignment of graphene with respect to the MoS2 substrate. Photoemission spectroscopy indicates interface dipole formation, p-type doping of graphene by ~0.09 eV downward shift of the Fermi-level below the Dirac point, and a negative space charge region in bulk MoS2. Interestingly, valence band spectra of the graphene covered MoS2 surface indicate a band gap narrowing of the MoS2 surface by ~0.1 eV. This band gap reduction at the surface is further evidence that interlayer van der Waals interactions critically influence the band structure of 2D-layered dichalcogenides and suggest that interfacing with dissimilar van der Waals materials allows tuning of their electronic properties. PMID:24297086

  1. 78 FR 3319 - Amendments to Existing Validated End User Authorizations: Advanced Micro Devices China, Inc., Lam...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-16

    ... Suzhou, China 78 FR [INSERT FR 3C002 and 3C004 215021. PAGE NUMBER] 1/16/ and Advanced Micro 13... on June 19, 2007 (72 FR 33646) to create Authorization VEU. ] Amendment to Existing Validated End... (Mexico) and Reports,'' published July 2, 2012 (77 FR 39354). Former List of Eligible Items for SK...

  2. Non-Intrusive Device for Real-Time Circulatory System Assessment with Advanced Signal Processing Capabilities

    NASA Astrophysics Data System (ADS)

    Pinheiro, E.; Postolache, O.; Girão, P.

    2010-01-01

    This paper presents a device that uses three cardiography signals to characterize several important parameters of a subject's circulatory system. Using electrocardiogram, finger photoplethysmogram, and ballistocardiogram, three heart rate estimates are acquired from beat-to-beat time interval extraction. Furthermore, pre-ejection period, pulse transit time (PTT), and pulse arrival time (PAT) are computed, and their long-term evolution is analyzed. The system estimates heart rate variability (HRV) and blood pressure variability (BPV) from the heart rate and PAT time series, to infer the activity of the cardiac autonomic system. The software component of the device evaluates the frequency content of HRV and BPV, and also their fractal dimension and entropy, thus providing a detailed analysis of the time series' regularity and complexity evolution, to allow personalized subject evaluation.

  3. Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

    NASA Technical Reports Server (NTRS)

    Koch, T. L.; Thom, R. D.; Parrish, W. D.

    1981-01-01

    The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

  4. An advanced tracker design for pointing and control of space vehicles using the charge injection device

    NASA Technical Reports Server (NTRS)

    Jones, C.; Kollodge, J. C.

    1982-01-01

    The use of charge transfer devices (CTD) in pointing and control of space vehicles is examined, with emphasis on the use of charge injection devices (CID). The selection of CTD type and CID operation, including CID signal and noise analysis and signal improvement, are discussed. Star tracking operational advantages of the CTD are pointed out, and the tracking optical concept is discussed and graphically depicted. The position interpolation procedure and the effects of rate of stellar motion on position interpolation are considered, and error analysis is examined. Finally, the breadboard and test program are discussed in detail, coarse and fine acquisition, test for star, track pattern, test procedure and results. An overall accuracy performance of approximately 0.02 pixels or approximately 0.8 arcsec for the test equipment and tracker was obtained.

  5. Automatic detection of selective arterial devices for advanced visualization during abdominal aortic aneurysm endovascular repair.

    PubMed

    Lessard, Simon; Kauffmann, Claude; Pfister, Marcus; Cloutier, Guy; Thérasse, Éric; de Guise, Jacques A; Soulez, Gilles

    2015-10-01

    Here we address the automatic segmentation of endovascular devices used in the endovascular repair (EVAR) of abdominal aortic aneurysms (AAA) that deform vascular tissues. Using this approach, the vascular structure is automatically reshaped solving the issue of misregistration observed on 2D/3D image fusion for EVAR guidance. The endovascular devices we considered are the graduated pigtail catheter (PC) used for contrast injection and the stent-graft delivery device (DD). The segmentation of the DD was enhanced using an asymmetric Frangi filter. The segmented geometries were then analysed using their specific features to remove artefacts. The radiopaque markers of the PC were enhanced using a fusion of Hessian and newly introduced gradient norm shift filters. Extensive experiments were performed using a database of images taken during 28 AAA-EVAR interventions. This dataset was divided into two parts: the first half was used to optimize parameters and the second to compile performances using optimal values obtained. The radiopaque markers of the PC were detected with a sensitivity of 88.3% and a positive predictive value (PPV) of 96%. The PC can therefore be positioned with a majority of its markers localized while the artefacts were all located inside the vessel lumen. The major parts of the DD, the dilatator tip and the pusher surfaces, were detected accurately with a sensitivity of 85.9% and a PPV of 88.7%. The less visible part of the DD, the stent enclosed within the sheath, was segmented with a sensitivity of 63.4% because the radiopacity of this region is low and uneven. The centreline of the DD in this stent region was alternatively traced within a 0.74 mm mean error. The automatic segmentation of endovascular devices during EVAR is feasible and accurate; it could be useful to perform elastic registration of the vascular lumen during endovascular repair. PMID:26362721

  6. Low-Cost Photolithographic Fabrication of Nanowires and Microfilters for Advanced Bioassay Devices

    PubMed Central

    Doan, Nhi M.; Qiang, Liangliang; Li, Zhe; Vaddiraju, Santhisagar; Bishop, Gregory W.; Rusling, James F.; Papadimitrakopoulos, Fotios

    2015-01-01

    Integrated microfluidic devices with nanosized array electrodes and microfiltration capabilities can greatly increase sensitivity and enhance automation in immunoassay devices. In this contribution, we utilize the edge-patterning method of thin aluminum (Al) films in order to form nano- to micron-sized gaps. Evaporation of high work-function metals (i.e., Au, Ag, etc.) on these gaps, followed by Al lift-off, enables the formation of electrical uniform nanowires from low-cost, plastic-based, photomasks. By replacing Al with chromium (Cr), the formation of high resolution, custom-made photomasks that are ideal for low-cost fabrication of a plurality of array devices were realized. To demonstrate the feasibility of such Cr photomasks, SU-8 micro-pillar masters were formed and replicated into PDMS to produce micron-sized filters with 3–4 µm gaps and an aspect ratio of 3. These microfilters were capable of retaining 6 µm beads within a localized site, while allowing solvent flow. The combination of nanowire arrays and micro-pillar filtration opens new perspectives for rapid R&D screening of various microfluidic-based immunoassay geometries, where analyte pre-concentration and highly sensitive, electrochemical detection can be readily co-localized. PMID:25774709

  7. Low-cost photolithographic fabrication of nanowires and microfilters for advanced bioassay devices.

    PubMed

    Doan, Nhi M; Qiang, Liangliang; Li, Zhe; Vaddiraju, Santhisagar; Bishop, Gregory W; Rusling, James F; Papadimitrakopoulos, Fotios

    2015-01-01

    Integrated microfluidic devices with nanosized array electrodes and microfiltration capabilities can greatly increase sensitivity and enhance automation in immunoassay devices. In this contribution, we utilize the edge-patterning method of thin aluminum (Al) films in order to form nano- to micron-sized gaps. Evaporation of high work-function metals (i.e., Au, Ag, etc.) on these gaps, followed by Al lift-off, enables the formation of electrical uniform nanowires from low-cost, plastic-based, photomasks. By replacing Al with chromium (Cr), the formation of high resolution, custom-made photomasks that are ideal for low-cost fabrication of a plurality of array devices were realized. To demonstrate the feasibility of such Cr photomasks, SU-8 micro-pillar masters were formed and replicated into PDMS to produce micron-sized filters with 3-4 µm gaps and an aspect ratio of 3. These microfilters were capable of retaining 6 µm beads within a localized site, while allowing solvent flow. The combination of nanowire arrays and micro-pillar filtration opens new perspectives for rapid R&D screening of various microfluidic-based immunoassay geometries, where analyte pre-concentration and highly sensitive, electrochemical detection can be readily co-localized. PMID:25774709

  8. Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

    NASA Astrophysics Data System (ADS)

    Sacher, Wesley David

    Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the

  9. The effects of surface polarity and dangling bonds on the electronic properties of MoS2 on SiO2

    NASA Astrophysics Data System (ADS)

    Sung, Ha-Jun; Choe, Duk-Hyun; Chang, Kee Joo

    2015-03-01

    MoS2 has recently attracted much attention due to its intriguing physical phenomena and possible applications for the next generation electronic devices. In pristine monolayer MoS2, strong spin-orbit coupling and inversion symmetry breaking allow for an effective coupling between the spin and valley degrees of freedom, inducing valley polarization at the K valleys. However, the spin-valley coupling disappears in bilayer MoS2 because the inversion symmetry is restored. In this work, we investigate the effects of surface polarity and dangling bonds on the electronic properties of MoS2 on α-quartz SiO2 through first-principles calculations. In monolayer MoS2, a transition can take place from the direct-gap to indirect-gap semiconductor in the presence of O dangling bonds. In bilayer MoS2, O dangling bonds induce dipole fields across the interface and thus break the inversion symmetry, resulting in the valley polarization, similar to that of pristine monolayer MoS2. Based on the results, we discuss the origin of the valley polarization observed in MoS2 deposited on SiO2 This work was supported by National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and by Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

  10. Nonlinear absorption, nonlinear scattering, and optical limiting properties of MoS2-ZnO composite-based organic glasses.

    PubMed

    Qu, Bin; Ouyang, Qiuyun; Yu, Xianbo; Luo, Wenhe; Qi, Lihong; Chen, Yujin

    2015-02-28

    MoS2-ZnO composites were synthesized using a solution-based method. The scanning electron microscopy and transmission electron microscopy analysis demonstrated that ZnO nanoparticles with a size of about 4.5 nm were coated on the basal surface of MoS2 nanosheets with an expanded spacing of the (002) plane. The MoS2-ZnO composite-based poly(methyl methacrylate) (PMMA) organic glasses (MoS2-ZnO-PMMA organic glasses) were prepared through a polymerization process. The nonlinear absorption (NLA), nonlinear scattering (NLS), and optical limiting (OL) properties of the MoS2-ZnO-PMMA organic glasses with different amounts of MoS2-ZnO were investigated using a modified Z-scan technique. Compared to MoS2-PMMA and ZnO-PMMA organic glasses, the MoS2-ZnO-PMMA organic glasses exhibited enhanced NLA, NLS, and OL properties, which were attributed to the interfacial charge transfer between MoS2 nanosheets and ZnO nanoparticles, the layered structure of MoS2 nanosheets, the small size effect of ZnO nanoparticles, and the local field effect. In addition, a changeover from saturable absorption (SA) to reverse saturable absorption (RSA) could be realized in the MoS2-ZnO-PMMA organic glasses by adjusting the input energy. The total nonlinear extinction coefficient and response time of the MoS2-ZnO-PMMA organic glasses could be up to 2380 cm GW(-1) and several hundred picoseconds, respectively. Compared to the MoS2 films, the MoS2-ZnO-PMMA organic glasses have higher optical damage threshold, better mechanical strength and flexibility. Thus the MoS2-ZnO-PMMA organic glasses are very promising for optical devices such as optical limiters, optical shutters, ultrafast lasers, and ultrafast optical switches. PMID:25642471

  11. Review on recent and advanced applications of monoliths and related porous polymer gels in micro-fluidic devices.

    PubMed

    Vázquez, Mercedes; Paull, Brett

    2010-06-01

    This review critically summarises recent novel and advanced achievements in the application of monolithic materials and related porous polymer gels in micro-fluidic devices appearing within the literature over the period of the last 5 years (2005-2010). The range of monolithic materials has developed rapidly over the past decade, with a diverse and highly versatile class of materials now available, with each exhibiting distinct porosities, pore sizes, and a wide variety of surface functionalities. A major advantage of these materials is their ease of preparation in micro-fluidic channels by in situ polymerisation, leading to monolithic materials being increasingly utilised for a larger variety of purposes in micro-fluidic platforms. Applications of porous polymer monoliths, silica-based monoliths and related homogeneous porous polymer gels in the preparation of separation columns, ion-permeable membranes, preconcentrators, extractors, electrospray emitters, micro-valves, electrokinetic pumps, micro-reactors and micro-mixers in micro-fluidic devices are discussed herein. Procedures used in the preparation of monolithic materials in micro-channels, as well as some practical aspects of the micro-fluidic chip fabrication are addressed. Recent analytical/bioanalytical and catalytic applications of the final micro-fluidic devices incorporating monolithic materials are also reviewed. PMID:20493286

  12. Improvement of screening methods for silicon planar semiconductor devices

    NASA Technical Reports Server (NTRS)

    Berger, W. M.

    1972-01-01

    The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.

  13. The dual MOS-gated thyristor (DMGT) structure

    NASA Astrophysics Data System (ADS)

    Flores, D.; Fernández, J.; Jordà, X.; Rebollo, J.; Godignon, P.; Hidalgo, S.; Millán, J.

    1998-04-01

    A new device concept, called the dual MOS-gated thyristor (DMGT), is presented in this paper and analyzed with the aid of 2D numerical simulations. The structure includes a vertical thyristor, a floating ohmic contact (FOC), and two N-channel MOSFETs (M1 and M2) which are controlled by independent gates. It can be operated either in a thyristor mode or in an IGBT regime, which provides the device a low on-state voltage drop and a good forward biased safe operating area. When a positive bias is applied to the M1 gate, the structure operates in the thyristor mode with a low on-state voltage drop. On the contrary, when a positive bias is applied to the M2 gate, the structure operates in the IGBT regime with the saturated current controlled by the positive voltage applied to the M1 gate.

  14. Tunable MoS2 bandgap in MoS2-graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Ebnonnasir, Abbas; Narayanan, Badri; Kodambaka, Suneel; Ciobanu, Cristian V.

    2014-07-01

    Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS2-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS2 strongly influences the type and the value of the electronic bandgap in MoS2, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S-S interplanar distance (MoS2 thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo-S bonds.

  15. Device structures and carrier transport properties of advanced CMOS using high mobility channels

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Numata, T.; Usuda, K.; Sugiyama, N.; Shichijo, M.; Nakane, R.; Sugahara, S.

    2007-04-01

    Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III-V materials are reviewed. These carrier transport enhancement technologies can be classified into three categories; global enhancement techniques, local enhancement techniques and global/local-merged techniques. We present our recent results on MOSFETs using these three types of the technologies with an emphasis on the global strained-Si/SiGe/Ge substrates and the combination with the local techniques. Finally, issues on device structures merged with III-V materials are briefly described.

  16. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

    PubMed

    Yoon, Jongwon; Park, Woojin; Bae, Ga-Yeong; Kim, Yonghun; Jang, Hun Soo; Hyun, Yujun; Lim, Sung Kwan; Kahng, Yung Ho; Hong, Woong-Ki; Lee, Byoung Hun; Ko, Heung Cho

    2013-10-11

    A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices. PMID:23420782

  17. Two-dimensional Layered MoS2 Biosensors Enable Highly Sensitive Detection of Biomolecules

    NASA Astrophysics Data System (ADS)

    Lee, Joonhyung; Dak, Piyush; Lee, Yeonsung; Park, Heekyeong; Choi, Woong; Alam, Muhammad A.; Kim, Sunkook

    2014-12-01

    We present a MoS2 biosensor to electrically detect prostate specific antigen (PSA) in a highly sensitive and label-free manner. Unlike previous MoS2-FET-based biosensors, the device configuration of our biosensors does not require a dielectric layer such as HfO2 due to the hydrophobicity of MoS2. Such an oxide-free operation improves sensitivity and simplifies sensor design. For a quantitative and selective detection of PSA antigen, anti-PSA antibody was immobilized on the sensor surface. Then, introduction of PSA antigen, into the anti-PSA immobilized sensor surface resulted in a lable-free immunoassary format. Measured off-state current of the device showed a significant decrease as the applied PSA concentration was increased. The minimum detectable concentration of PSA is 1 pg/mL, which is several orders of magnitude below the clinical cut-off level of ~4 ng/mL. In addition, we also provide a systematic theoretical analysis of the sensor platform - including the charge state of protein at the specific pH level, and self-consistent channel transport. Taken together, the experimental demonstration and the theoretical framework provide a comprehensive description of the performance potential of dielectric-free MoS2-based biosensor technology.

  18. Magnetic field calculations of a permanent magnet insertion device for the advanced photon source

    SciTech Connect

    Kim, S.H.

    1988-03-01

    The magnetic fields of a hybrid undulator for the 7-GeV Advanced Photon Source (APS) have been calculated. The 2-D geometries of regular poles and end pole are chosen using PANDIRA and PE2D codes. The field distribution in 3-D geometry are calculated using the TOSCA code. It is shown that the undulator dimensions should be chosen according to the requirements of the final use. TOSCA calculations in the 2-D limit agreed remarkably well with the results of PANDIRA and PE2D.

  19. Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

    PubMed

    Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

    2016-04-29

    Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing. PMID:26984949

  20. Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

    NASA Astrophysics Data System (ADS)

    Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basso Basset, Francesco; Pezzoli, Fabio; Molle, Alessandro

    2016-04-01

    Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm2-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

  1. Trap-induced photoresponse of solution-synthesized MoS2

    NASA Astrophysics Data System (ADS)

    Lee, Youngbin; Yang, Jaehyun; Lee, Dain; Kim, Yong-Hoon; Park, Jin-Hong; Kim, Hyoungsub; Cho, Jeong Ho

    2016-04-01

    We investigated, for the first time, the photoresponse characteristics of solution-synthesized MoS2 phototransistors. The photoresponse of the solution-synthesized MoS2 phototransistor was solely determined by the interactions of the photogenerated charge carriers with the surface adsorbates and the interface trap sites. Instead of contributing to the photocurrent, the illumination-generated electron-hole pairs were captured in the trap sites (surface and interface sites) due to the low carrier mobility of the solution-synthesized MoS2. The photogenerated holes discharged ions (oxygen and/or water) adsorbed onto the MoS2 surface and were released as neutral molecules. At the same time, the photogenerated electrons filled the traps present at the interface with the underlying substrate during their transport to the drain electrode. The filled trap sites significantly relieved the band bending near the surface region, which resulted in both a negative shift in the turn-on voltage and an increase in the photocurrent. The time-dependent dynamics of the solution-synthesized MoS2 phototransistors revealed persistent photoconductance due to the trapped electrons at the interface. The photoconductance was recovered by applying a short positive gate pulse. The instantaneous discharge of the trapped electrons dramatically reduced the relaxation time to less than 20 ms. This study provides an important clue to understanding the photoresponses of various optoelectronic devices prepared using solution-synthesized two-dimensional nanomaterials.We investigated, for the first time, the photoresponse characteristics of solution-synthesized MoS2 phototransistors. The photoresponse of the solution-synthesized MoS2 phototransistor was solely determined by the interactions of the photogenerated charge carriers with the surface adsorbates and the interface trap sites. Instead of contributing to the photocurrent, the illumination-generated electron-hole pairs were captured in the trap

  2. Facile fabrication of wafer-scale MoS2 neat films with enhanced third-order nonlinear optical performance.

    PubMed

    Zhang, Xiaoyan; Zhang, Saifeng; Chang, Chunxia; Feng, Yanyan; Li, Yuanxin; Dong, Ningning; Wang, Kangpeng; Zhang, Long; Blau, Werner J; Wang, Jun

    2015-02-21

    Wafer-scale MoS2 neat films with controllable thicknesses were successfully fabricated by vacuum filtering liquid-exfoliated MoS2 dispersions. The obtained MoS2 filtered thin films were systematically characterized by UV-Vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). It was found that the fabricated scalable MoS2 films have a smooth surface and high optical homogeneity verified by AFM and a collimated 532 nm beam, respectively. We investigated the ultrafast nonlinear optical (NLO) properties of the filtered films by an open aperture Z-scan method using 515 and 1030 nm femtosecond laser pulses. Saturable absorption was observed at both 515 and 1030 nm with the figure of merit (FOM) values as ∼3.3 × 10(-12) esu cm and ∼3.4 × 10(-14) esu cm, respectively. The observation of ultrafast NLO performance of the MoS2 filtered films indicates that vacuum filtration is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other two-dimensional films from the corresponding dispersions. This easy film fabrication technology will greatly enlarge the application of graphene analogues including graphene in photonic devices, especially of MoS2 as a saturable absorber. PMID:25597818

  3. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

    NASA Astrophysics Data System (ADS)

    Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.; Burke, Robert A.; Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan

    2014-05-01

    We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.

  4. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    PubMed

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications. PMID:27373305

  5. Advanced devices for photoacoustic imaging to improve cancer and cerebrovascular medicine

    NASA Astrophysics Data System (ADS)

    Montilla Marien, Leonardo Gabriel

    Recent clinical studies have demonstrated that photoacoustic imaging (PAI) provides important diagnostic information for breast cancer staging. Despite these promising studies, PAI remains an unfeasible option for clinics due to the cost to implement, the required large modification in user conduct and the inflexibility of the hardware to accommodate other applications for the incremental enhancement in diagnostic information. The research described in this dissertation addresses these issues by designing attachments to clinical ultrasound probes and incorporating custom detectors into commercial ultrasound scanners. The ultimate benefit of these handheld devices is to expand the capability of current ultrasound systems and facilitate the translation of PAI to enhance cancer diagnostics and neurosurgical outcomes. Photoacoustic enabling devices (PEDs) were designed as attachments to two clinical ultrasound probes optimized for breast cancer diagnostics. PAI uses pulsed laser excitation to create transient heating (<1°C) and thermoelastic expansion that is detected as an ultrasonic emission. These ultrasonic emissions are remotely sensed to construct noninvasive images with optical contrast at depths much greater than other optical modalities. The PEDs are feasible in terms of cost, user familiarity and flexibility for various applications. Another possible application for PAI is in assisting neurosurgeons treating aneurysms. Aneurysms are often treated by placing a clip to prevent blood flow into the aneurysm. However, this procedure has risks associated with damaging nearby vessels. One of the developed PEDs demonstrated the feasibility to three-dimensionally image tiny microvasculature (<0.3mm) beyond large blood occlusions (>2.4mm) in a phantom model. The capability to use this during surgery would suggest decreasing the risks associated with these treatments. However, clinical ultrasound arrays are not clinically feasible for microsurgical applications due to

  6. A highly sensitive, highly transparent, gel-gated MoS2 phototransistor on biodegradable nanopaper

    NASA Astrophysics Data System (ADS)

    Zhang, Qing; Bao, Wenzhong; Gong, Amy; Gong, Tao; Ma, Dakang; Wan, Jiayu; Dai, Jiaqi; Munday, Jeremy N.; He-Hau, Jr.; Hu, Liangbing; Zhang, Daihua

    2016-07-01

    Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as gate dielectrics and semiconductive channels for high-performance field effect transistors. Here we report on the first MoS2 phototransistor built on a flexible, transparent and biodegradable substrate with an electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited an excellent photoresponsivity of ~1.5 kA W-1, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly and biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as gate dielectrics and semiconductive channels for high-performance field effect transistors. Here we report on the first MoS2 phototransistor built on a flexible, transparent and biodegradable substrate with an electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited an excellent photoresponsivity of ~1.5 kA W-1, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent

  7. The ion beam sputtering facility at KURRI: Coatings for advanced neutron optical devices

    NASA Astrophysics Data System (ADS)

    Hino, Masahiro; Oda, Tatsuro; Kitaguchi, Masaaki; Yamada, Norifumi L.; Tasaki, Seiji; Kawabata, Yuji

    2015-10-01

    We describe a film coating facility for the development of multilayer mirrors for use in neutron optical devices that handle slow neutron beams. Recently, we succeeded in fabricating a large neutron supermirror with high reflectivity using an ion beam sputtering system (KUR-IBS), as well as all neutron supermirrors in two neutron guide tubes at BL06 at J-PARC/MLF. We also realized a large flexible self-standing m=5 NiC/Ti supermirror and very small d-spacing (d=1.65 nm) multilayer sheets. In this paper, we present an overview of the performance and utility of non-magnetic neutron multilayer mirrors fabricated with the KUR-IBS

  8. Moving graphene devices from lab to market: advanced graphene-coated nanoprobes.

    PubMed

    Hui, Fei; Vajha, Pujashree; Shi, Yuanyuan; Ji, Yanfeng; Duan, Huiling; Padovani, Andrea; Larcher, Luca; Li, Xiao Rong; Xu, Jing Juan; Lanza, Mario

    2016-04-28

    After more than a decade working with graphene there is still a preoccupying lack of commercial devices based on this wonder material. Here we report the use of high-quality solution-processed graphene sheets to fabricate ultra-sharp probes with superior performance. Nanoprobes are versatile tools used in many fields of science, but they can wear fast after some experiments, reducing the quality and increasing the cost of the research. As the market of nanoprobes is huge, providing a solution for this problem should be a priority for the nanotechnology industry. Our graphene-coated nanoprobes not only show enhanced lifetime, but also additional unique properties of graphene, such as hydrophobicity. Moreover, we have functionalized the surface of graphene to provide piezoelectric capability, and have fabricated a nano relay. The simplicity and low cost of this method, which can be used to coat any kind of sharp tip, make it suitable for the industry, allowing production on demand. PMID:26593053

  9. Development and characterization of 3D, nano-confined multicellular constructs for advanced biohybrid devices.

    SciTech Connect

    Kaehr, Bryan James

    2011-09-01

    This is the final report for the President Harry S. Truman Fellowship in National Security Science and Engineering (LDRD project 130813) awarded to Dr. Bryan Kaehr from 2008-2011. Biological chemistries, cells, and integrated systems (e.g., organisms, ecologies, etc.) offer important lessons for the design of synthetic strategies and materials. The desire to both understand and ultimately improve upon biological processes has been a driving force for considerable scientific efforts worldwide. However, to impart the useful properties of biological systems into modern devices and materials requires new ideas and technologies. The research herein addresses aspects of these issues through the development of (1) a rapid-prototyping methodology to build 3D bio-interfaces and catalytic architectures, (2) a quantitative method to measure cell/material mechanical interactions in situ and at the microscale, and (3) a breakthrough approach to generate functional biocomposites from bacteria and cultured cells.

  10. Advances in CO2 laser fabrication for high power fibre laser devices

    NASA Astrophysics Data System (ADS)

    Boyd, Keiron; Rees, Simon; Simakov, Nikita; Daniel, Jae M. O.; Swain, Robert; Mies, Eric; Hemming, Alexander; Clarkson, W. A.; Haub, John

    2016-03-01

    CO2 laser processing facilitates contamination free, rapid, precise and reproducible fabrication of devices for high power fibre laser applications. We present recent progress in fibre end-face preparation and cladding surface modification techniques. We demonstrate a fine feature CO2 laser process that yields topography significantly smaller than that achieved with typical mechanical cleaving processes. We also investigate the side processing of optical fibres for the fabrication of all-glass cladding light strippers and demonstrate extremely efficient cladding mode removal. We apply both techniques to fibres with complex designs containing multiple layers of doped and un-doped silica as well as shaped and circularly symmetric structures. Finally, we discuss the challenges and approaches to working with various fibre and glass-types.

  11. Advances in phosphors based on organic materials for light emitting devices

    NASA Astrophysics Data System (ADS)

    Sharma, Kashma; Kumar, Vijay; Kumar, Vinod; Swart, Hendrik C.

    2016-01-01

    A brief overview is presented in the light emitting diodes (LEDs) based on purely organic materials. Organic LEDs are of great interest to the research community because of their outstanding properties and flexibility. Comparison between devices made using different organic materials and their derivatives with respect to synthetic protocols, characterizations, quantum efficiencies, sensitivity, specificity and their applications in various fields have been discussed. This review also discusses the essential requirement and scientific issues that arise in synthesizing cost-effective and environmental friendly organic LEDs diodes based on purely organic materials. This mini review aims to capture and convey some of the key current developments in phosphors formed by purely organic materials and highlights some possible future applications. Hence, this study comes up with a widespread discussion on the various contents in a single platform. Also, it offers avenues for new researchers for futuristic development in the area.

  12. Advanced techniques for latent fingerprint detection and validation using a CWL device

    NASA Astrophysics Data System (ADS)

    Makrushin, Andrey; Hildebrandt, Mario; Fischer, Robert; Kiertscher, Tobias; Dittmann, Jana; Vielhauer, Claus

    2012-06-01

    The technology-aided support of forensic experts while investigating crime scenes and collecting traces becomes a more and more important part in the domains of image acquisition and signal processing. The manual lifting of latent fingerprints using conventional methods like the use of carbon black powder is time-consuming and very limited in its scope of application. New technologies for a contact-less and non-invasive acquisition and automatic processing of latent fingerprints, promise the possibilities to inspect much more and larger surface areas and can significantly simplify and speed up the workflow. Furthermore, it allows multiple investigations of the same trace, subsequent chemical analysis of the residue left behind and the acquisition of latent fingerprints on sensitive surfaces without destroying the surface itself. In this work, a FRT MicroProf200 surface measurement device equipped with a chromatic white-light sensor CWL600 is used. The device provides a gray-scale intensity image and 3D-topography data simultaneously. While large area scans are time-consuming, the detection and localization of finger traces are done based on low-resolution scans. The localized areas are scanned again with higher resolution. Due to the broad variety of different surface characteristics the fingerprint pattern is often overlaid by the surface structure or texture. Thus, image processing and classification techniques are proposed for validation and visualization of ridge lines in high-resolution scans. Positively validated regions containing complete or sufficient partial fingerprints are passed on to forensic experts. The experiments are provided on a set of three surfaces with different reflection and texture characteristics, and fingerprints from ten different persons.

  13. Principles to Products: Toward Realizing MOS 2.0

    NASA Technical Reports Server (NTRS)

    Bindschadler, Duane L.; Delp, Christopher L.

    2012-01-01

    This is a report on the Operations Revitalization Initiative, part of the ongoing NASA-funded Advanced Multi-Mission Operations Systems (AMMOS) program. We are implementing products that significantly improve efficiency and effectiveness of Mission Operations Systems (MOS) for deep-space missions. We take a multi-mission approach, in keeping with our organization's charter to "provide multi-mission tools and services that enable mission customers to operate at a lower total cost to NASA." Focusing first on architectural fundamentals of the MOS, we review the effort's progress. In particular, we note the use of stakeholder interactions and consideration of past lessons learned to motivate a set of Principles that guide the evolution of the AMMOS. Thus guided, we have created essential patterns and connections (detailed in companion papers) that are explicitly modeled and support elaboration at multiple levels of detail (system, sub-system, element...) throughout a MOS. This architecture is realized in design and implementation products that provide lifecycle support to a Mission at the system and subsystem level. The products include adaptable multi-mission engineering documentation that describes essentials such as operational concepts and scenarios, requirements, interfaces and agreements, information models, and mission operations processes. Because we have adopted a model-based system engineering method, these documents and their contents are meaningfully related to one another and to the system model. This means they are both more rigorous and reusable (from mission to mission) than standard system engineering products. The use of models also enables detailed, early (e.g., formulation phase) insight into the impact of changes (e.g., to interfaces or to software) that is rigorous and complete, allowing better decisions on cost or technical trades. Finally, our work provides clear and rigorous specification of operations needs to software developers, further

  14. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lee, Honggoo; Lee, Jongsu; Kim, Sang Min; Lee, Changhwan; Han, Sangjun; Kim, Myoungsoo; Kwon, Wontaik; Park, Sung-Ki; Vukkadala, Pradeep; Awasthi, Amartya; Kim, J. H.; Veeraraghavan, Sathish; Choi, DongSub; Huang, Kevin; Dighe, Prasanna; Lee, Cheouljung; Byeon, Jungho; Dey, Soham; Sinha, Jaydeep

    2015-03-01

    Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes - which is directly related to

  15. Monolayer MoS2-Graphene Hybrid Aerogels with Controllable Porosity for Lithium-Ion Batteries with High Reversible Capacity.

    PubMed

    Jiang, Lianfu; Lin, Binghui; Li, Xiaoming; Song, Xiufeng; Xia, Hui; Li, Liang; Zeng, Haibo

    2016-02-01

    Monolayer MoS2 nanosheets (NSs) are promising anode materials for lithium-ion batteries because all redox reactions take place at the surface without lithium-ion diffusion limit. However, the expanded band gap of monolayer MoS2 NSs (∼1.8 eV) compared to their bulk counterparts (∼1.2 eV) and restacking tendency due to the van der Waals forces result in poor electron transfer and loss of the structure advantage. Here, a facile approach is developed to fabricate the MoS2-graphene aerogels comprising controlled three-dimensional (3D) porous architectures constructed by interconnected monolayer MoS2-graphene hybrid NSs. The robust 3D architectures combining with the monolayer feature of the hybrid NSs not only prevent the MoS2 and graphene NSs from restacking, but also enable fast electrode kinetics due to the surface reaction mechanism and highly conductive graphene matrix. As a consequence, the 3D porous monolayer MoS2-graphene composite aerogels exhibit a large reversible capacity up to 1200 mAh g(-1) as well as outstanding cycling stability and rate performance, making them promising as advanced anode materials for lithium-ion batteries. PMID:26761564

  16. Substrate dependence of Hall and Field-effect mobilities in few-layer MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chamlagain, Bhim; Perera, Meeghage; Chuang, Hsuen-Jen; Bowman, Arthur; Rijal, Upendra; Andrews, Kraig; Klesko, Joseph; Winter, Charles; Zhou, Zhixian

    In this work, we systematically study the Hall and field-effect mobilities of few-layer MoS2 FETs fabricated on different substrates. Hall bar devices were fabricated on SiO2 and hBN to directly measure carrier density. Standard four-probe transport measurement and Hall effect measurement were carried out for a wide temperature range to determine the carrier mobility and understand the scattering mechanisms. By comparing field-effect and Hall mobilities, we demonstrate that the intrinsic drift mobility of multiplayer MoS2 in the high carrier density metallic region is independent of substrate and sample thickness. While the optical-phonon scattering remains the dominant scattering mechanism in MoS2 devices on h-BN down to ~100 K, extrinsic scattering mechanisms start to degrade the carrier mobility of MoS2 on all other substrates below ~200 K. NSF Grant Number DMR-1308436.

  17. The cryogenic MOS unit for LUCIFER

    NASA Astrophysics Data System (ADS)

    Hofmann, Reiner; Gemperlein, Hans; Grimm, Bernhard; Jutte, Marcus; Mandel, Holger; Polsterer, Kai; Weisz, Harald

    2004-09-01

    The LUCIFER MOS unit has been designed to exchange long-slit and multi-slit masks between two mask storage cabinets and the focal plane area. In combination with auxiliary cryostats, the MOS unit also permits the exchange of cold mask cabinets between LUCIFER and the auxiliary cryostats. Main functional components of the MOS unit are: a focal plane interface accepting the active mask, a mask handling unit transporting the masks between the focal plane mount and their storage locations, a stationary and an exchangeable cabinet holding 10 longslit and 23 multi-slit masks respectively, the translation drives for the exchangeable cabinet and the mask handling unit, and the mask locking unit securing the masks in their cabinets. For mask cabinet exchange, the LUCIFER cryostat as well as the auxiliary cryostats are equipped with 32 cm clear diameter gate valves. A test cryostat has been built to test all MOS unit functions at LN2 temperature. Most of the MOS unit components have been completed. System tests at ambient have started. First results are presented.

  18. Advances in three-dimensional rapid prototyping of microfluidic devices for biological applications

    PubMed Central

    O'Neill, P. F.; Ben Azouz, A.; Vázquez, M.; Liu, J.; Marczak, S.; Slouka, Z.; Chang, H. C.; Diamond, D.; Brabazon, D.

    2014-01-01

    The capability of 3D printing technologies for direct production of complex 3D structures in a single step has recently attracted an ever increasing interest within the field of microfluidics. Recently, ultrafast lasers have also allowed developing new methods for production of internal microfluidic channels within the bulk of glass and polymer materials by direct internal 3D laser writing. This review critically summarizes the latest advances in the production of microfluidic 3D structures by using 3D printing technologies and direct internal 3D laser writing fabrication methods. Current applications of these rapid prototyped microfluidic platforms in biology will be also discussed. These include imaging of cells and living organisms, electrochemical detection of viruses and neurotransmitters, and studies in drug transport and induced-release of adenosine triphosphate from erythrocytes. PMID:25538804

  19. Advanced Biasing Experiments on the C-2 Field-Reversed Configuration Device

    NASA Astrophysics Data System (ADS)

    Thompson, Matthew; Korepanov, Sergey; Garate, Eusebio; Yang, Xiaokang; Gota, Hiroshi; Douglass, Jon; Allfrey, Ian; Valentine, Travis; Uchizono, Nolan; TAE Team

    2014-10-01

    The C-2 experiment seeks to study the evolution, heating and sustainment effects of neutral beam injection on field-reversed configuration (FRC) plasmas. Recently, substantial improvements in plasma performance were achieved through the application of edge biasing with coaxial plasma guns located in the divertors. Edge biasing provides rotation control that reduces instabilities and E × B shear that improves confinement. Typically, the plasma gun arcs are run at ~ 10 MW for the entire shot duration (~ 5 ms), which will become unsustainable as the plasma duration increases. We have conducted several advanced biasing experiments with reduced-average-power plasma gun operating modes and alternative biasing cathodes in an effort to develop an effective biasing scenario applicable to steady state FRC plasmas. Early results show that several techniques can potentially provide effective, long-duration edge biasing.

  20. Advances in three-dimensional rapid prototyping of microfluidic devices for biological applications.

    PubMed

    O'Neill, P F; Ben Azouz, A; Vázquez, M; Liu, J; Marczak, S; Slouka, Z; Chang, H C; Diamond, D; Brabazon, D

    2014-09-01

    The capability of 3D printing technologies for direct production of complex 3D structures in a single step has recently attracted an ever increasing interest within the field of microfluidics. Recently, ultrafast lasers have also allowed developing new methods for production of internal microfluidic channels within the bulk of glass and polymer materials by direct internal 3D laser writing. This review critically summarizes the latest advances in the production of microfluidic 3D structures by using 3D printing technologies and direct internal 3D laser writing fabrication methods. Current applications of these rapid prototyped microfluidic platforms in biology will be also discussed. These include imaging of cells and living organisms, electrochemical detection of viruses and neurotransmitters, and studies in drug transport and induced-release of adenosine triphosphate from erythrocytes. PMID:25538804

  1. Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure

    NASA Astrophysics Data System (ADS)

    Kobayashi, Takuhei; Hori, Naoki; Nakajima, Takashi; Kawae, Takeshi

    2016-03-01

    Ferroelectric field-effect transistors (FeFET) based on MoS2 have recently been shown to exhibit considerable potential for use in nano sized non-volatile memory devices. Here, we demonstrated fabrication and characterization of FeFET based on MoS2 channel with vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer as back-gate insulator. In this device, counterclockwise hysteresis behavior was observed in the drain current-gate voltage curve, which is indicative of interaction between MoS2 carrier modulation and ferroelectric polarization switching. Furthermore, our VDF-TrFE/MoS2 FeFET exhibited only n-type behavior, a maximum linear mobility of 625 cm2/V s, a large memory window width of 16 V, and a high on/off current ratio of 8 × 105.

  2. Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

    PubMed Central

    Ghosh, Sujoy; Winchester, Andrew; Muchharla, Baleeswaraiah; Wasala, Milinda; Feng, Simin; Elias, Ana Laura; Krishna, M. Bala Murali; Harada, Takaaki; Chin, Catherine; Dani, Keshav; Kar, Swastik; Terrones, Mauricio; Talapatra, Saikat

    2015-01-01

    2-Dimensional structures with swift optical response have several technological advantages, for example they could be used as components of ultrafast light modulators, photo-detectors, and optical switches. Here we report on the fast photo switching behavior of thin films of liquid phase exfoliated MoS2, when excited with a continuous laser of λ = 658 nm (E = 1.88 eV), over a broad range of laser power. Transient photo-conductivity measurements, using an optical pump and THz probe (OPTP), reveal that photo carrier decay follows a bi-exponential time dependence, with decay times of the order of picoseconds, indicating that the photo carrier recombination occurs via trap states. The nature of variation of photocurrent with temperature confirms that the trap states are continuously distributed within the mobility gap in these thin film of MoS2, and play a vital role in influencing the overall photo response. Our findings provide a fundamental understanding of the photo-physics associated with optically active 2D materials and are crucial for developing advanced optoelectronic devices. PMID:26175112

  3. Advances in the development of an imaging device for plaque measurement in the area of the carotid artery

    PubMed Central

    Ličev, Lačezar; Krumnikl, Michal; Škuta, Jaromír; Babiuch, Marek; Farana, Radim

    2014-01-01

    This paper describes the advances in the development and subsequent testing of an imaging device for three-dimensional ultrasound measurement of atherosclerotic plaque in the carotid artery. The embolization from the atherosclerotic carotid plaque is one of the most common causes of ischemic stroke and, therefore, we consider the measurement of the plaque as extremely important. The paper describes the proposed hardware for enhancing the standard ultrasonic probe to provide a possibility of accurate probe positioning and synchronization with the cardiac activity, allowing the precise plaque measurements that were impossible with the standard equipment. The synchronization signal is derived from the output signal of the patient monitor (electrocardiogram (ECG)), processed by a microcontroller-based system, generating the control commands for the linear motion moving the probe. The controlling algorithm synchronizes the movement with the ECG waveform to obtain clear images not disturbed by the heart activity. PMID:26740760

  4. Moving graphene devices from lab to market: advanced graphene-coated nanoprobes

    NASA Astrophysics Data System (ADS)

    Hui, Fei; Vajha, Pujashree; Shi, Yuanyuan; Ji, Yanfeng; Duan, Huiling; Padovani, Andrea; Larcher, Luca; Li, Xiao Rong; Xu, Jing Juan; Lanza, Mario

    2016-04-01

    After more than a decade working with graphene there is still a preoccupying lack of commercial devices based on this wonder material. Here we report the use of high-quality solution-processed graphene sheets to fabricate ultra-sharp probes with superior performance. Nanoprobes are versatile tools used in many fields of science, but they can wear fast after some experiments, reducing the quality and increasing the cost of the research. As the market of nanoprobes is huge, providing a solution for this problem should be a priority for the nanotechnology industry. Our graphene-coated nanoprobes not only show enhanced lifetime, but also additional unique properties of graphene, such as hydrophobicity. Moreover, we have functionalized the surface of graphene to provide piezoelectric capability, and have fabricated a nano relay. The simplicity and low cost of this method, which can be used to coat any kind of sharp tip, make it suitable for the industry, allowing production on demand.After more than a decade working with graphene there is still a preoccupying lack of commercial devices based on this wonder material. Here we report the use of high-quality solution-processed graphene sheets to fabricate ultra-sharp probes with superior performance. Nanoprobes are versatile tools used in many fields of science, but they can wear fast after some experiments, reducing the quality and increasing the cost of the research. As the market of nanoprobes is huge, providing a solution for this problem should be a priority for the nanotechnology industry. Our graphene-coated nanoprobes not only show enhanced lifetime, but also additional unique properties of graphene, such as hydrophobicity. Moreover, we have functionalized the surface of graphene to provide piezoelectric capability, and have fabricated a nano relay. The simplicity and low cost of this method, which can be used to coat any kind of sharp tip, make it suitable for the industry, allowing production on demand. Electronic

  5. MOSFET and MOS capacitor responses to ionizing radiation

    NASA Technical Reports Server (NTRS)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  6. Advances in molecular electronics: Synthesis and testing of potential molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Price, David Wilson, Jr.

    New potential molecular electronics devices have been synthesized based on our knowledge of previous systems that have come out of our group. Previous studies and current studies have shown that simple molecular systems demonstrate negative differential resistance (NDR) and memory characteristics. The new systems rely primarily on the redox properties of the compounds to improve upon the solid state properties already observed. Most of these new organic compounds use thiol-based "alligator clips" for attachment to metal surfaces. Some of the compounds, however, contain different "alligator clips," primarily isonitriles, for attachment to metal substrates. It is our hope that these new "alligator clips" will offer lower conductivity barriers (higher current density). Electrochemical tests have been performed in order to evaluate those redox properties and in the hope of using those electrochemical results as a predictive tool to evaluate the usefulness of those compounds. Also, organic structures with polymerizable functionalities have been synthesized in order to cross-link the molecules once they are a part of a self-assembled monolayer (SAM). This has been shown to enable the electrochemical growth of polypyrrole from a SAM in a controllable manner.

  7. New regulations for medical devices: Rationale, advances and impact on research and patient care

    PubMed Central

    Labek, Gerold; Schöffl, Harald; Stoica, Christian Ioan

    2016-01-01

    A series of events relating to inferior medical devices has brought about changes in the legal requirements regarding quality control on the part of regulators. Apart from clinical studies, register and routine data will play an essential role in this context. To ensure adequate use of these data, adapted methodologies are required as register data in fact represent a new scientific entity. For the interpretation of register and routine data several limitations of published data should be taken into account. In many cases essential parameters of study cohorts - such as age, comorbidities, the patients’ risk profiles or the hospital profile - are not presented. Required data and evaluation procedures differ significantly, for example, between hip and spine implants. A “one fits for all” methodology is quite unlikely to exist and vigorous efforts will be required to develop suitable standards in the next future. The new legislation will affect all high-risk products, besides joint implants also contact lenses, cardiac pacemakers or stents, for example, the new regulations can markedly enhance product quality monitoring. Register data and clinical studies should not be considered as competitors, they complement each other when used responsibly. In the future follow-up studies should increasingly focus on specific questions, while global follow-up investigations regarding product complication rates and surgical methods will increasingly be covered by registers. PMID:27004163

  8. Charge-Transfer Mobility Parameters in Photoelectronic Devices: The Advanced Miller-Abrahams Computation.

    PubMed

    Basilevsky, M V; Odinokov, A V; Komarova, K G

    2015-06-18

    The local hopping step of the electron transfer (ET) reaction is investigated for a real organic material composed of molecules M (N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine). This material is implemented in light-emitting photoelectronic devices. The conductivity effect is simulated and calculated at a molecular level. We have studied the ET mechanism alternative to that suggested by the usually employed Marcus-like polaron model. The ion-molecular binary complex M(+)M (for hole transfer) is considered as a reaction center. The reaction dynamics is carried through the low-frequency intermolecular vibration coordinate connecting its fragments (the promotion mode). Its coupling to the acoustic phonon bath serves for a dissipation of the reaction energy misfit. The high-frequency intramolecular vibrations (the reorganization modes) modulate the reaction kinetics via Franck-Condon factors induced by their polarization. The ET rate constants are evaluated in terms of the computational algorithm described earlier (Basilevsky, M. V.; et al. J. Chem. Phys. 2013 139, 234102). Standard quantum-chemical and molecular dynamical techniques are used for a calculation of all necessary parameters of this model. The macroscopic charge-carrier mobility of the material is estimated by properly averaging the rate constants over the total simulation cell. PMID:25636079

  9. Lateral Built-In Potential of Monolayer MoS2 -WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.

    PubMed

    Chen, Kun; Wan, Xi; Xie, Weiguang; Wen, Jinxiu; Kang, Zhiwen; Zeng, Xiaoliang; Chen, Huanjun; Xu, Jianbin

    2015-11-01

    Lateral WS2 -MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2 -MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices. PMID:26398227

  10. MOS Circuitry Would Detect Low-Energy Charged Particles

    NASA Technical Reports Server (NTRS)

    Sinha, Mahadeva; Wadsworth, Mark

    2003-01-01

    Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

  11. The Design and Optimization of Advanced Thermophotovoltaic Devices for Deep Space Applications Using a New Modeling Approach

    NASA Astrophysics Data System (ADS)

    Michael, Sherif; Canfield, L. T. Burt

    2007-02-01

    Thermophotovoltaic (TPV) cells hold great promise for lightweight, reliable energy conversion for deep space missions. A new method for developing a realistic model of any type of solar cell, with application to Thermophotovoltaic devices, is presented in this paper. Taking into account the high cost of research and experimentation involved with the development of advanced cells, we present here this novel methodology. An example model of an InGaP/GaAs/Ge multi-junction cell is prepared and is fully simulated. The major stages of the process are explained and the simulation results are compared to published experimental data. An example of cell parameters optimization is also presented. The flexibility of the proposed methodology is demonstrated and example results are shown throughout the whole process. One of the big problems for use of TPV devices in any space mission is heat removal. Currently, many TPV designs assume a low temperature radiator, which equates to large areas and masses. As an application to demonstrate the advantage of this approach. The Silvaco Virtual Wafer Fabrication Software is used as a tool to examine TPV optimization and performance at high temperatures in an attempt to reduce the mass cost associated with large radiators. Results are shown for InGaAs cells optimized to a 1300K black body at 350 K, 400 K, 450 K, and, 500 K.

  12. 4D Ultrasound - Medical Devices for Recent Advances on the Etiology of Cerebral Palsy

    PubMed Central

    Tomasovic, Sanja; Predojevic, Maja

    2011-01-01

    Children cerebral palsy (CCP) encompasses a group of nonprogessive and noninfectious conditions, which cause light, moderate, and severe deviations in neurological development. Diagnosis of CCP is set mostly by the age of 3 years. The fact that a large number of cerebral damage occurs prenatally and the fact that early intervention in cases of neurological damage is successful, prompted some researchers to explore the possibility of detecting neurologically damaged fetus in the uterus. This research was made possible thanks to the development of two-dimensional ultrasound technology in a real time, which enabled the display of the mobility of the fetus. Advancement of the ultrasound technology has enabled the development of 4D ultrasound where a spontaneous fetal movement can be observed almost in a real time. Estimate of the number and quality of spontaneous fetal movements and stitches on the head, the neurology thumb and a high palate were included in the prenatal neurological screening of the fetus. This raises the question, as to does the fetal behavior reflect, (which was revealed in 2D or 4D ultrasound), fetal neurological development in a manner that will allow the detection of the brain damage. PMID:23407920

  13. Cell Phone-Based and Adherence Device Technologies for HIV Care and Treatment in Resource-Limited Settings: Recent Advances.

    PubMed

    Campbell, Jeffrey I; Haberer, Jessica E

    2015-12-01

    Numerous cell phone-based and adherence monitoring technologies have been developed to address barriers to effective HIV prevention, testing, and treatment. Because most people living with HIV and AIDS reside in resource-limited settings (RLS), it is important to understand the development and use of these technologies in RLS. Recent research on cell phone-based technologies has focused on HIV education, linkage to and retention in care, disease tracking, and antiretroviral therapy adherence reminders. Advances in adherence devices have focused on real-time adherence monitors, which have been used for both antiretroviral therapy and pre-exposure prophylaxis. Real-time monitoring has recently been combined with cell phone-based technologies to create real-time adherence interventions using short message service (SMS). New developments in adherence technologies are exploring ingestion monitoring and metabolite detection to confirm adherence. This article provides an overview of recent advances in these two families of technologies and includes research on their acceptability and cost-effectiveness when available. It additionally outlines key challenges and needed research as use of these technologies continues to expand and evolve. PMID:26439917

  14. Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Zhou, Yongli; Zhang, Aihua; Zhang, Yan; Wang, Zhong Lin

    2016-05-01

    Recently, the piezotronic effect has been observed in two-dimensional single-layer MoS2 materials, which have potential applications in force and pressure triggered or controlled electronic devices, sensors, and human-machine interfaces. However, classical theory faces the difficulty in explaining the mechanism of the piezotronic effect for the top- and enclosed-contacted MoS2 transistors, since the piezoelectric charges are assumed to exist only at the edge of the MoS2 flake that is far from the electronic transport pathway. In the present study, we identify the piezoelectric charges at the MoS2/metal-MoS2 interface by employing both the density functional theory and finite element method simulations. This interface is on the transport pathway of both top- and enclosed-contacted MoS2 transistors, thus it is capable of controlling their transport properties. This study deepens the understanding of piezotronic effect and provides guidance for the design of two-dimensional piezotronic devices.

  15. Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates.

    PubMed

    Li, Yuanyuan; Qi, Zeming; Liu, Miao; Wang, Yuyin; Cheng, Xuerui; Zhang, Guobin; Sheng, Liusi

    2014-12-21

    In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical properties of the atomically thin-film are influenced by the interaction between the thin-film and the substrate. In this article, utilizing monolayer MoS(2) on LaAlO(3) and SrTiO(3) substrates, as well as SiO2 and Gel-film as reference substrates similar to previously reported work [Nano Res, 2014, 7, 561], we systematically investigate the substrate effect on the photoluminescence of monolayer MoS(2). We observed significantly substrate-dependant photoluminescence of monolayer MoS(2), originating from substrate-to-film charge transfer. We found that SiO2 substrate introduces the most charge doping while SrTiO(3) introduces less charge transfer. Through the selection of desired substrate, we are able to induce different amounts of charge into the monolayer MoS(2), which consequently modifies the neutral exciton and charged exciton (trion) emissions. Finally, we proposed a band-diagram model to elucidate the relation between charge transfer and the substrate Fermi level and work function. Our work demonstrates that the substrate charge transfer exerts a strong influence on the monolayer MoS(2) photoluminescence property, which should be considered during device design and application. The work also provides a possible route to modify the thin-film photoluminescence property via substrate engineering for future device design. PMID:25382775

  16. Measurement of gas bremsstrahlung from the insertion device beamlines of the advanced photon source

    SciTech Connect

    Pisharody, M.; Job, P.K.; Magill, S.

    1997-03-01

    High energy electron storage rings generate energetic bremsstrahlung photons through radiative interaction of the electrons (or positrons) with the residual gas molecules inside the storage ring. The resulting radiation exits at an average emittance angle of (m{sub 0}c{sub 2}/E) radian with respect to the electron beam path, where m{sub 0}c{sup 2} is the rest mass of E the electron and E its kinetic energy. Thus, at straight sections of the storage rings, moving electrons will produce a narrow and intense monodirectional photon beam. At synchrotron radiation facilities, where beamlines are channeled out of the storage ring, a continuous gas bremsstrahlung spectrum, with a maximum energy of the electron beam, will be present. There are a number of compelling reasons that a measurement of the bremsstrahlung characteristics be conducted at the Advanced Photon Source (APS) storage ring. Although the number of residual gas molecules present in the storage ring at typical nTorr vacuum is low, because of the long straight paths of the electrons in the storage ring at APS, significant production of bremsstrahlung will be produced. This may pose a radiation hazard. It is then imperative that personnel be shielded from dose rates due to this radiation. There are not many measurements available for gas bremsstrahlung, especially for higher electron beam energies. The quantitative estimates of gas bremsstrahlung from storage rings as evaluated by Monte Carlo codes also have several uncertainties. They are in general calculated for air at atmospheric pressure, the results of which are then extrapolated to typical storage ring vacuum values (of the order of 10{sup -9} Torr). Realistically, the actual pressure profile can vary inside the narrow vacuum chamber. Also, the actual chemical composition of the residual gas inside the storage ring is generally different from that of air.

  17. Identification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples

    NASA Astrophysics Data System (ADS)

    Brandão, F. D.; Ribeiro, G. M.; Vaz, P. H.; González, J. C.; Krambrock, K.

    2016-06-01

    MoS2 monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS2 shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS2 monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS2 with a corresponding donor concentration of about 108-12 defects/cm2 for MoS2 monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 1015 cm-3, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 1019 cm-3 and net acceptor concentration of 5 × 1018 cm-3 related to sulfur vacancies.

  18. Highly effective and accurate weak point monitoring method for advanced design rule (1x nm) devices

    NASA Astrophysics Data System (ADS)

    Ahn, Jeongho; Seong, ShiJin; Yoon, Minjung; Park, Il-Suk; Kim, HyungSeop; Ihm, Dongchul; Chin, Soobok; Sivaraman, Gangadharan; Li, Mingwei; Babulnath, Raghav; Lee, Chang Ho; Kurada, Satya; Brown, Christine; Galani, Rajiv; Kim, JaeHyun

    2014-04-01

    Historically when we used to manufacture semiconductor devices for 45 nm or above design rules, IC manufacturing yield was mainly determined by global random variations and therefore the chip manufacturers / manufacturing team were mainly responsible for yield improvement. With the introduction of sub-45 nm semiconductor technologies, yield started to be dominated by systematic variations, primarily centered on resolution problems, copper/low-k interconnects and CMP. These local systematic variations, which have become decisively greater than global random variations, are design-dependent [1, 2] and therefore designers now share the responsibility of increasing yield with manufacturers / manufacturing teams. A widening manufacturing gap has led to a dramatic increase in design rules that are either too restrictive or do not guarantee a litho/etch hotspot-free design. The semiconductor industry is currently limited to 193 nm scanners and no relief is expected from the equipment side to prevent / eliminate these systematic hotspots. Hence we have seen a lot of design houses coming up with innovative design products to check hotspots based on model based lithography checks to validate design manufacturability, which will also account for complex two-dimensional effects that stem from aggressive scaling of 193 nm lithography. Most of these hotspots (a.k.a., weak points) are especially seen on Back End of the Line (BEOL) process levels like Mx ADI, Mx Etch and Mx CMP. Inspecting some of these BEOL levels can be extremely challenging as there are lots of wafer noises or nuisances that can hinder an inspector's ability to detect and monitor the defects or weak points of interest. In this work we have attempted to accurately inspect the weak points using a novel broadband plasma optical inspection approach that enhances defect signal from patterns of interest (POI) and precisely suppresses surrounding wafer noises. This new approach is a paradigm shift in wafer inspection

  19. Transport properties of monolayer MoS2 grown by chemical vapor deposition.

    PubMed

    Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang; Toh, Minglin; Kumar, Rajeev; Zhao, Weijie; Neto, A H Castro; Martin, Jens; Adam, Shaffique; Özyilmaz, Barbaros; Eda, Goki

    2014-01-01

    Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed. PMID:24640984

  20. A compact plasmonic MOS-based 2×2 electro-optic switch

    NASA Astrophysics Data System (ADS)

    Ye, Chenran; Liu, Ke; Soref, Richard A.; Sorger, Volker J.

    2015-01-01

    We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

  1. MOS 2.0: Modeling the Next Revolutionary Mission Operations System

    NASA Technical Reports Server (NTRS)

    Delp, Christopher L.; Bindschadler, Duane; Wollaeger, Ryan; Carrion, Carlos; McCullar, Michelle; Jackson, Maddalena; Sarrel, Marc; Anderson, Louise; Lam, Doris

    2011-01-01

    Designed and implemented in the 1980's, the Advanced Multi-Mission Operations System (AMMOS) was a breakthrough for deep-space NASA missions, enabling significant reductions in the cost and risk of implementing ground systems. By designing a framework for use across multiple missions and adaptability to specific mission needs, AMMOS developers created a set of applications that have operated dozens of deep-space robotic missions over the past 30 years. We seek to leverage advances in technology and practice of architecting and systems engineering, using model-based approaches to update the AMMOS. We therefore revisit fundamental aspects of the AMMOS, resulting in a major update to the Mission Operations System (MOS): MOS 2.0. This update will ensure that the MOS can support an increasing range of mission types, (such as orbiters, landers, rovers, penetrators and balloons), and that the operations systems for deep-space robotic missions can reap the benefits of an iterative multi-mission framework.12 This paper reports on the first phase of this major update. Here we describe the methods and formal semantics used to address MOS 2.0 architecture and some early results. Early benefits of this approach include improved stakeholder input and buy-in, the ability to articulate and focus effort on key, system-wide principles, and efficiency gains obtained by use of well-architected design patterns and the use of models to improve the quality of documentation and decrease the effort required to produce and maintain it. We find that such methods facilitate reasoning, simulation, analysis on the system design in terms of design impacts, generation of products (e.g., project-review and software-delivery products), and use of formal process descriptions to enable goal-based operations. This initial phase yields a forward-looking and principled MOS 2.0 architectural vision, which considers both the mission-specific context and long-term system sustainability.

  2. The effect of defects produced by electron irradiation on the electrical properties of graphene and MoS2

    NASA Astrophysics Data System (ADS)

    Rodriguez-Manzo, Julio Alejandro; Balan, Adrian; Nayor, Carl; Parkin, Will; Puster, Matthew; Johnson, A. T. Charlie; Drndic, Marija

    2015-03-01

    We present a study of the effects of the defects produced by electron irradiation on the electrical and crystalline properties of graphene and MoS2 monolayers. We realized back or side gated electrical devices from monolayer MoS2 or graphene crystals (triangles respectively hexagons) suspended on a 50nm SiNx m. The devices are exposed to electron irradiation inside a 200kV transmission electron microscope (TEM) and we perform in situ conductance measurements. The number of defects and the quality of the crystalline lattice obtained by diffraction are correlated with the observed decrease in mobility and conductivity of the devices. We observe a different behavior between MoS2 and graphene, and try to associate this with different models for conduction with defects. Finally, we use the TEM electron beam to tailor the macroscopic layers into ribbons to be used as the sensing element in MoS2 nanoribbon - nanopore devices for DNA detection and sequencing.

  3. Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.

    PubMed

    Nan, Haiyan; Wang, Zilu; Wang, Wenhui; Liang, Zheng; Lu, Yan; Chen, Qian; He, Daowei; Tan, Pingheng; Miao, Feng; Wang, Xinran; Wang, Jinlan; Ni, Zhenhua

    2014-06-24

    We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high-temperature annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by mild oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices. PMID:24836121

  4. Highly responsive MoS2 photodetectors enhanced by graphene quantum dots

    PubMed Central

    Chen, Caiyun; Qiao, Hong; Lin, Shenghuang; Man Luk, Chi; Liu, Yan; Xu, Zaiquan; Song, Jingchao; Xue, Yunzhou; Li, Delong; Yuan, Jian; Yu, Wenzhi; Pan, Chunxu; Ping Lau, Shu; Bao, Qiaoliang

    2015-01-01

    Molybdenum disulphide (MoS2), which is a typical semiconductor from the family of layered transition metal dichalcogenides (TMDs), is an attractive material for optoelectronic and photodetection applications because of its tunable bandgap and high quantum luminescence efficiency. Although a high photoresponsivity of 880–2000 AW−1 and photogain up to 5000 have been demonstrated in MoS2-based photodetectors, the light absorption and gain mechanisms are two fundamental issues preventing these materials from further improvement. In addition, it is still debated whether monolayer or multilayer MoS2 could deliver better performance. Here, we demonstrate a photoresponsivity of approximately 104 AW−1 and a photogain of approximately 107 electrons per photon in an n-n heterostructure photodetector that consists of a multilayer MoS2 thin film covered with a thin layer of graphene quantum dots (GQDs). The enhanced light-matter interaction results from effective charge transfer and the re-absorption of photons, leading to enhanced light absorption and the creation of electron-hole pairs. It is feasible to scale up the device and obtain a fast response, thus making it one step closer to practical applications. PMID:26137854

  5. Functional polymers for electronic-structure modulation of MoS2

    NASA Astrophysics Data System (ADS)

    Ramasubramaniam, Ashwin; Selhorst, Ryan; Puodziukynaite, Egle; Dewey, Jeffrey; Wang, Peijian; Barnes, Michael; Emrick, Todd

    Two-dimensional semiconductors based on the Mo and W family of transition metal dichalcogenides (TMDCs) are emerging as an important class of materials with unique optoelectronic properties. However, there remain challenges associated with precise control over carrier doping and work functions that need to be overcome for device applications. We report the synthesis of new tetrathiafulvalene (TTF)-based polymers that provide enhanced solution stabilization of MoS2 nanosheets while simultaneously modulating their electronic structure through robust, non-covalent interactions. Kelvin probe force microscopy (KPFM) imaging of TTF-polymer functionalized 2H MoS2 nanosheets confirms n-doping of the MoS2 with an accompanying reduction in the work function. Density functional theory calculations provide insight into the TTF-MoS2 interfacial interactions and provide a theoretical basis for modulation of electronic properties of MoS2 via charge-transfer interactions. These combined results illustrate the potential for polymer doping of TMDCs as a viable and scalable approach for synthesis of new hybrid materials for optoelectronics.

  6. Electron transfer kinetics on natural crystals of MoS2 and graphite.

    PubMed

    Velický, Matěj; Bissett, Mark A; Toth, Peter S; Patten, Hollie V; Worrall, Stephen D; Rodgers, Andrew N J; Hill, Ernie W; Kinloch, Ian A; Novoselov, Konstantin S; Georgiou, Thanasis; Britnell, Liam; Dryfe, Robert A W

    2015-07-21

    Here, we evaluate the electrochemical performance of sparsely studied natural crystals of molybdenite and graphite, which have increasingly been used for fabrication of next generation monolayer molybdenum disulphide and graphene energy storage devices. Heterogeneous electron transfer kinetics of several redox mediators, including Fe(CN)6(3-/4-), Ru(NH3)6(3+/2+) and IrCl6(2-/3-) are determined using voltammetry in a micro-droplet cell. The kinetics on both materials are studied as a function of surface defectiveness, surface ageing, applied potential and illumination. We find that the basal planes of both natural MoS2 and graphite show significant electroactivity, but a large decrease in electron transfer kinetics is observed on atmosphere-aged surfaces in comparison to in situ freshly cleaved surfaces of both materials. This is attributed to surface oxidation and adsorption of airborne contaminants at the surface exposed to an ambient environment. In contrast to semimetallic graphite, the electrode kinetics on semiconducting MoS2 are strongly dependent on the surface illumination and applied potential. Furthermore, while visibly present defects/cracks do not significantly affect the response of graphite, the kinetics on MoS2 systematically accelerate with small increase in disorder. These findings have direct implications for use of MoS2 and graphene/graphite as electrode materials in electrochemistry-related applications. PMID:26088339

  7. Chemical Dissolution Pathways of MoS2 Nanosheets in Biological and Environmental Media.

    PubMed

    Wang, Zhongying; von dem Bussche, Annette; Qiu, Yang; Valentin, Thomas M; Gion, Kyle; Kane, Agnes B; Hurt, Robert H

    2016-07-01

    Material stability and dissolution in aqueous media are key issues to address in the development of a new nanomaterial intended for technological application. Dissolution phenomena affect biological and environmental persistence; fate, transport, and biokinetics; device and product stability; and toxicity pathways and mechanisms. This article shows that MoS2 nanosheets are thermodynamically and kinetically unstable to O2-oxidation under ambient conditions in a variety of aqueous media. The oxidation is accompanied by nanosheet degradation and release of soluble molybdenum and sulfur species, and generates protons that can colloidally destabilize the remaining sheets. The oxidation kinetics are pH-dependent, and a kinetic law is developed for use in biokinetic and environmental fate modeling. MoS2 nanosheets fabricated by chemical exfoliation with n-butyl-lithium are a mixture of 1T (primary) and 2H (secondary) phases and oxidize rapidly with a typical half-life of 1-30 days. Ultrasonically exfoliated sheets are in pure 2H phase, and oxidize much more slowly. Cytotoxicity experiments on MoS2 nanosheets and molybdate ion controls reveal the relative roles of the nanosheet and soluble fractions in the biological response. These results indicate that MoS2 nanosheets will not show long-term persistence in living systems and oxic natural waters, with important implications for biomedical applications and environmental risk. PMID:27267956

  8. Schottky barrier heights for Au and Pd contacts to MoS2

    NASA Astrophysics Data System (ADS)

    Kaushik, Naveen; Nipane, Ankur; Basheer, Firdous; Dubey, Sudipta; Grover, Sameer; Deshmukh, Mandar M.; Lodha, Saurabh

    2014-09-01

    The search of a p-type metal contact on MoS2 has remained inconclusive, with high work function metals such as Au, Ni, and Pt showing n-type behavior and mixed reports of n as well as p-type behavior for Pd. In this work, we report quantitative Schottky barrier heights for Au and Pd contacts to MoS2 obtained by analysing low temperature transistor characteristics and contact resistance data obtained using the transfer length method. Both Au and Pd exhibit n-type behavior on multilayer as well as monolayer MoS2 transistors with Schottky barrier heights of 0.126 eV and 0.4 eV, and contact resistances of 42 Ω.mm and 18 × 104 Ω.mm respectively. Scanning photocurrent spectroscopy data is in agreement with the resulting energy band alignment in Au-MoS2-Pd devices further reinforcing the observation that the Fermi-level is pinned in the upper half of MoS2 bandgap.

  9. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

    NASA Astrophysics Data System (ADS)

    Sengupta, Sarmista; Pandit, Soumya

    2015-06-01

    Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

  10. MoS2 Field-effect Transistors with Graphene/Metal Hetero-contacts

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Yang, Lingming; Zhang, Jingyun; Conrad, Nathan; Liu, Han; Ye, Peide

    2014-03-01

    MoS2, as one of the mostly studied transition-metal dichalcogenides, has already revealed a series of new physics and potential device applications. However, the performance of the MoS2 field-effect transistors is limited by the large contact resistance at metal/MoS2 interface due to the non-negligible Schottky barrier. In this study, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the metal contacts have been fabricated showing more than 160 mA/mm drain current at 1 μm gate length and on-off current ratio of 107. Different metal contacts (Ti, Ni, Au, and Pd) from low work function to high work function metals on MoS2/graphene hetero contacts have been performed and studied. Moreover, for the first time, 2D Fermi-level pinning concept is introduced to understand the band alignment of hetero-structured metal/graphene/MoS2 or other 2D semiconductor interfaces. Temperature dependent, noise, and stress measurement results will also be presented.

  11. Ultrafast charge transfer in MoS2/WSe2 p–n Heterojunction

    NASA Astrophysics Data System (ADS)

    Peng, Bo; Yu, Guannan; Liu, Xinfeng; Liu, Bo; Liang, Xiao; Bi, Lei; Deng, Longjiang; Chien Sum, Tze; Loh, Kian Ping

    2016-06-01

    Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) onto n-type molybdenum disulfide (MoS2). Theory predicts that stacked MoS2 and WSe2 monolayer forms type II p–n junction, creating a built-in electric field across the interface which facilitates electron–hole separation and transfer. Gaining insights into the dynamics of charge transfer across van der Waals heterostructure is central to understanding light-photocurrent conversion at these ultrathin interfaces. Herein, we investigate the exciton dissociation and charge transfer in a MoS2/WSe2 van der Waals hetero-structure. Our results show that ultrafast electron transfer from WSe2 to MoS2 take place within 470 fs upon optical excitation with 99% charge transfer efficiency, leading to drastic photoluminescence quenching and decreased lifetime. Our findings suggest that van der Waals heterostructure may be useful as active components in ultrafast optoelectronic devices.

  12. P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

    PubMed

    Liu, Xiaochi; Qu, Deshun; Ryu, Jungjin; Ahmed, Faisal; Yang, Zheng; Lee, Daeyeong; Yoo, Won Jong

    2016-03-01

    A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications. PMID:26808483

  13. MoS2-Titanium Contact Interface Reactions.

    PubMed

    McDonnell, Stephen; Smyth, Christopher; Hinkle, Christopher L; Wallace, Robert M

    2016-03-01

    The formation of the Ti-MoS2 interface, which is heavily utilized in nanoelectronic device research, is studied by X-ray photoelectron spectroscopy. It is found that, if deposition under high vacuum (∼1 × 10(-6) mbar) as opposed to ultrahigh vacuum (∼1 × 10(-9) mbar) conditions are used, TiO2 forms at the interface rather than Ti. The high vacuum deposition results in an interface free of any detectable reaction between the semiconductor and the deposited contact. In contrast, when metallic titanium is successfully deposited by carrying out depositions in ultrahigh vacuum, the titanium reacts with MoS2 forming Ti(x)S(y) and metallic Mo at the interface. These results have far reaching implications as many prior studies assuming Ti contacts may have actually used TiO2 due to the nature of the deposition tools used. PMID:26967016

  14. MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching

    SciTech Connect

    BAYNE,S.B.; PORTNOY,W.M.; ROHWEIN,G.J.; HEFNER,A.R.

    2000-01-13

    Certain applications for pulse power require narrow, high current pulses for their implementation. This work was performed to determine if MCTS (MOS Controlled Thyristors) could be used for these applications. The MCTS were tested as discharge switches in a low inductance circuit delivering 1 {micro}s pulses at currents between roughly 3 kA and 11 kA, single shot and repetitively at 1, 10 and 50 Hz. Although up to 9000 switching events could be obtained, all the devices failed at some combination of current and repetition rate. Failure was attributed to temperature increases caused by average power dissipated in the thyristor during the switching sequence. A simulation was performed to confirm that the temperature rise was sufficient to account for failure. Considerable heat sinking, and perhaps a better thermal package, would be required before the MCT could be considered for pulse power applications.

  15. Physics-based stability analysis of MOS transistors

    NASA Astrophysics Data System (ADS)

    Ferrara, A.; Steeneken, P. G.; Boksteen, B. K.; Heringa, A.; Scholten, A. J.; Schmitz, J.; Hueting, R. J. E.

    2015-11-01

    In this work, a physics-based model is derived based on a linearization procedure for investigating the electrical, thermal and electro-thermal instability of power metal-oxide-semiconductor (MOS) transistors. The proposed model can be easily interfaced with a circuit or device simulator to perform a failure analysis, making it particularly useful for power transistors. Furthermore, it allows mapping the failure points on a three-dimensional (3D) space defined by the gate-width normalized drain current, drain voltage and junction temperature. This leads to the definition of the Safe Operating Volume (SOV), a powerful frame work for making failure predictions and determining the main root of instability (electrical, thermal or electro-thermal) in different bias and operating conditions. A comparison between the modeled and the measured SOV of silicon-on-insulator (SOI) LDMOS transistors is reported to support the validity of the proposed stability analysis.

  16. Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

    NASA Astrophysics Data System (ADS)

    Tanaka, Katsuhisa; Zhang, Rui; Takenaka, Mitsuru; Takagi, Shinichi

    2015-04-01

    Time-dependent changes in current and threshold voltage due to slow traps near Ge metal-oxide-semiconductor (MOS) interfaces is one of the most serious problems in Ge metal-oxide-semiconductor field-effect transistors (MOSFETs). In this study, we propose a new evaluation method of slow traps near MOS interfaces utilizing the time response of capacitance in MOS capacitors at a constant gate voltage, allowing us to evaluate the density and time constant of slow traps. We apply this method to Au/Al2O3/GeOx/Ge MOS capacitors and evaluate the density and average time constant of slow traps. The slow trap density of n-Ge MOS capacitors is found to be much larger than that of p-Ge MOS capacitors, indicating that a higher density of slow traps exists near the conduction band edge. We also examine the effects of post deposition annealing in a variety of ambient gases, including several hydrogen-based species, on the properties of slow traps.

  17. MoS2 nanocrystals confined in a DNA matrix exhibiting energy transfer.

    PubMed

    Goswami, Nirmal; Giri, Anupam; Pal, Samir Kumar

    2013-09-10

    We report the wet chemical synthesis of MoS2 nanocrystals (NCs), a transition-metal dichalcogenide, using DNA as a host matrix. As evidenced from transmission electron microscopy (TEM), the NCs are highly crystalline, with an average diameter of ~5 nm. Ultraviolet-visible (UV-vis) absorption studies along with band gap calculations confirm that NCs are in quantum confinement. A prominent red shift of the optical absorption bands has been observed upon formation of the thin film using hexadecyltrimethylammonium chloride (CTAC), i.e., in the case of MoS2@DNA-CTAC. In the thin film, strong electron-phonon coupling arises because of the resonance effect, which is reflected from the emergence of intense first-, second-, and third-order Raman peaks, whenever excited with the 488 nm line. We have established that our as-synthesized MoS2 NCs quench the fluorescence of a well-known DNA minor groove binding probe, Hoechst 33258. Unprecedented fluorescence quenching (94%) of donor (Hoechst 33258) emission and efficient energy transfer (89%) between Hoechst 33258 and MoS2 NCs (acceptor) are obtained. The donor-acceptor distance of these conjugates has been described by a Förster resonance energy transfer (FRET)-based model. Furthermore, employing a statistical method, we have estimated the probability of the distance distribution between the donor and acceptor. We believe that the study described herein may enable substantial advances in fields of optoelectronics, photovoltaics, catalysis, and many others. PMID:23931064

  18. Optics, mechanics, and energetics of two-dimensional MoS2 nanostructures from a theoretical perspective.

    PubMed

    Joswig, Jan-Ole; Lorenz, Tommy; Wendumu, Tsegabirhan Berhane; Gemming, Sibylle; Seifert, Gotthard

    2015-01-20

    CONSPECTUS: Nanostructures based on molybdenum disulfide (MoS2) are by far the most common and well-studied systems among two-dimensional (2D) semiconducting materials. Although still being characterized as a "promising material", catalytic activity of MoS2 nanostructures has been found, and applications in lubrication processes are pursued. Because exfoliation techniques have improved over the past years, monolayer MoS2 is easily at hand; thus, experimental studies on its electronic properties and applicability are in scientific focus, and some MoS2-based electronic devices have been reported already. Additionally, the improvement of atomic force microscopy led to nanoindentation experiments, in which the exceptional mechanical properties of MoS2 could be confirmed. In this Account, we review recent results from density-functional based calculations on several MoS2-based nanostructures; we have chosen to follow several experimental routes focusing on different nanostructures and their specific properties. MoS2-based triangular nanoflakes are systems that are experimentally well described and studied with a special focus on their optical absorption. The interpretation of our calculations fits well to the experimental picture: the absorption peaks in the visible light range show a quantum-confinement effect; they originate from excitations into the edge states. Additionally, delocalized metallic-like states are present close to the Fermi level, which do not contribute to photoabsorption in the visible range. Additionally, nanoindentation experiments have been simulated to obtain mechanical properties of the MoS2 material and to study the influence of deformation on the system's electronics. In these molecular-dynamics simulations, a tip penetrates a MoS2 monolayer, and the obtained Young's modulus and breaking stress agree very well with experimentally obtained values. Whereas the structural properties, such as bond lengths and layer contraction, vary locally

  19. Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

    PubMed

    Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

    2013-09-01

    Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. PMID:23589515

  20. Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

    We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

  1. A highly sensitive, highly transparent, gel-gated MoS2 phototransistor on biodegradable nanopaper.

    PubMed

    Zhang, Qing; Bao, Wenzhong; Gong, Amy; Gong, Tao; Ma, Dakang; Wan, Jiayu; Dai, Jiaqi; Munday, Jeremy N; He, Jr-Hau; Hu, Liangbing; Zhang, Daihua

    2016-08-01

    Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as gate dielectrics and semiconductive channels for high-performance field effect transistors. Here we report on the first MoS2 phototransistor built on a flexible, transparent and biodegradable substrate with an electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited an excellent photoresponsivity of ∼1.5 kA W(-1), about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly and biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility. PMID:27396391

  2. Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed.

    PubMed

    Kufer, Dominik; Konstantatos, Gerasimos

    2015-11-11

    Semiconducting, two-dimensional molybdenum disulfide (MoS2) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrimental and uncontrollable effects of environmental adsorbates on devices due to large surface to volume ratio. Here, we report on highly stable and high-performance monolayer and bilayer MoS2 photodetectors encapsulated with atomic layer deposited hafnium oxide. The protected devices show enhanced electronic properties by isolating them from the ambience as strong n-type doping, vanishing hysteresis, and reduced device resistance. By controlling the gate voltage the responsivity and temporal response can be tuned by several orders of magnitude with R ∼ 10-10(4) A/W and t ∼ 10 ms to 10 s. At strong negative gate voltage, the detector is operated at higher speed and simultaneously exhibits a low-bound, record sensitivity of D* ≥ 7.7 × 10(11) Jones. Our results lead the way for future application of ultrathin, flexible, and high-performance MoS2 detectors and prompt for further investigation in encapsulated transition metal dichalcogenide optoelectronics. PMID:26501356

  3. Layer-transferred MoS2/GaN PN diodes

    NASA Astrophysics Data System (ADS)

    Lee, Edwin W.; Lee, Choong Hee; Paul, Pran K.; Ma, Lu; McCulloch, William D.; Krishnamoorthy, Sriram; Wu, Yiying; Arehart, Aaron R.; Rajan, Siddharth

    2015-09-01

    Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition on sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of 0.23 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

  4. Development of a Ground-Based Analog to the Advanced Resistive Exercise Device Aboard the International Space Station

    NASA Technical Reports Server (NTRS)

    Newby, Nathaniel J.; Scott-Pandorf, M. M.; Caldwell, E.; DeWitt, J.K.; Fincke, R.; Peters, B.T.

    2010-01-01

    NASA and Wyle engineers constructed a Horizontal Exercise Fixture (HEF) that was patented in 2006. Recently modifications were made to HEF with the goal of creating a device that mimics squat exercise on the Advanced Resistive Exercise Device (ARED) and can be used by bed rest subjects who must remain supine during exercise. This project posed several engineering challenges, such as how best to reproduce the hip motions (we used a sled that allowed hip motion in the sagittal plane), how to counterweight the pelvis against gravity (we used a pulley and free-weight mechanism), and how to apply large loads (body weight plus squat load) to the shoulders while simultaneously supporting the back against gravity (we tested a standard and a safety bar that allowed movement in the subject s z-axis, both of which used a retractable plate for back support). METHODS An evaluation of the HEF was conducted with human subjects (3F, 3M), who performed sets of squat exercises of increasing load from 10-repetition maximum (RM) up to 1-RM. Three pelvic counterweight loads were tested along with each of the two back-support squat bars. Data collection included 3-dimensional ground reaction forces (GRF), muscle activation (EMG), body motion (video-based motion capture), and subjective comments. These data were compared with previous ground-based ARED study data. RESULTS All subjects in the evaluation were able to perform low- to high-loading squats on the HEF. Four of the 6 subjects preferred a pelvic counterweight equivalent to 60 percent of their body weight. Four subjects preferred the standard squat bar, whereas 2 female subjects preferred the safety bar. EMG data showed muscle activation in the legs and low back typical of squat motion. GRF trajectories and eccentric-concentric loading ratios were similar to ARED. CONCLUSION: Squat exercise performed on HEF approximated squat exercise on ARED.

  5. Final LDRD report : design and fabrication of advanced device structures for ultra high efficiency solid state lighting.

    SciTech Connect

    Koleske, Daniel David; Bogart, Katherine Huderle Andersen; Shul, Randy John; Wendt, Joel Robert; Crawford, Mary Hagerott; Allerman, Andrew Alan; Fischer, Arthur Joseph

    2005-04-01

    The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.

  6. Switching microwaves via semiconductor-isolator reversible transition in a thin-film of MoS2

    NASA Astrophysics Data System (ADS)

    Dragoman, Mircea; Cismaru, Alina; Aldrigo, Martino; Radoi, Antonio; Dragoman, Daniela

    2015-07-01

    In this paper, we show that a thin-film of MoS2 is able to switch microwave signals due to a reversible semiconductor-insulator transition displaying an ON/OFF ratio greater than 104. This switching occurs in the range of 4-16 GHz, which encompasses the C, X, and K bands. In this respect, the current-voltage dependence and the microwave properties of the MoS2 thin-film are investigated. An integrated microwave switch device and a single pole double throw switch circuit are then implemented based on this unique property.

  7. Forecasting of the performance of MOS device for space applications

    NASA Technical Reports Server (NTRS)

    Fang, P. H.

    1971-01-01

    Analysis of radiation damage of MOSFET data from Explorer 34 (IMP-F), and radiation damage characteristics of MOSFET with boron diffused between a silicon semiconductor and silicon oxide are considered. The first subject is an interpretation of the discrepancy between the space data and the laboratory data. The second subject is an attempt to analyze the radiation damage characteristic of MOSFET when there is modification of electrical properties in the gate oxide region.

  8. A New Electrolytic Synthesis Method for Few-Layered MoS2 Nanosheets and Their Robust Biointerfacing with Reduced Antibodies.

    PubMed

    Kukkar, Manil; Tuteja, Satish K; Sharma, Amit L; Kumar, Vinod; Paul, Ashok K; Kim, Ki-Hyun; Sabherwal, Priyanka; Deep, Akash

    2016-07-01

    We report an efficient method for the synthesis of few-layered MoS2 nanosheets and demonstrate their application in the label-free detection of the prostate-specific antigen (PSA) cancer marker. As a novel strategy, the electro-dissolution of molybdenum metal sheets in the presence of Na(+) and S(2-) ions led to the formation of Na(+) intercalated MoS2. Further exfoliation by ultrasonication yielded the desired formation of few-layered MoS2 nanosheets. After comprehensive characterization, the synthesized MoS2 nanosheets were channeled in a field-effect transistor (FET) microdevice. Chemically reduced anti-PSA antibodies were immobilized on the MoS2 channel above the FET microdevice to construct a specific PSA immunosensor. The antibodies were deliberately reduced to expose the hinge-region disulfide bonds. This approach offered a robust and site-directed immunosensing device through biointerfacing of the sulfhydryl groups (-SH) in the reduced antibody with the surface S atoms of MoS2. This device was validated as an effective immunosensor with a low detection limit (10(-5) ng/mL) over a wide linear detection range (10(-5) to 75 ng/mL). PMID:27296984

  9. Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors.

    PubMed

    Chen, Chuanmeng; Feng, Zhihong; Feng, Yiyu; Yue, Yuchen; Qin, Chengqun; Zhang, Daihua; Feng, Wei

    2016-07-27

    The large-scale synthesis of atomically thin, layered MoS2/graphene heterostructures is of great interest in optoelectronic devices because of their unique properties. Herein, we present a scalable synthesis method to prepare centimeter-scale, continuous, and uniform films of bilayer MoS2 using low-pressure chemical vapor deposition. This growth process was utilized to assemble a heterostructure by growing large-scale uniform films of bilayer MoS2 on graphene (G-MoS2/graphene). Atomic force microscopy, Raman spectra, and transmission electron microscopy characterization demonstrated that the large-scale bilayer MoS2 film on graphene exhibited good thickness uniformity and a polycrystalline nature. A centimeter-scale phototransistor prepared using the G-MoS2/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS2 on graphene (2.5 mA/W). This feature results from efficient charge transfer at the interface enabled by intimate contact between the grown bilayer MoS2 (G-MoS2) and graphene. The ability to integrate multilayer materials into atomically thin heterostructures paves the way for fabricating multifunctional devices by controlling their layer structure. PMID:27381011

  10. Anharmonic phonons in few-layer MoS2: Raman spectroscopy of ultralow energy compression and shear modes

    NASA Astrophysics Data System (ADS)

    Boukhicha, Mohamed; Calandra, Matteo; Measson, Marie-Aude; Lancry, Ophelie; Shukla, Abhay

    2013-05-01

    Molybdenum disulfide (MoS2) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS2 flakes can show high mobilities and have even been integrated in nanocircuits. A fundamental requirement for such use is efficient thermal transport. Electronic transport generates heat which needs to be evacuated, more crucially so in nanostructures. Anharmonic phonon-phonon scattering is the dominant intrinsic limitation to thermal transport in insulators. Here, using appropriate samples, ultralow energy Raman spectroscopy and first-principles calculations, we provide a full experimental and theoretical description of compression and shear modes of few-layer (FL) MoS2. We demonstrate that the compression modes are strongly anharmonic with a marked enhancement of phonon-phonon scattering as the number of layers is reduced, most likely a general feature of nanolayered materials with weak interlayer coupling.

  11. Layer-by-layer thinning of two-dimensional MoS2 films by using a focused ion beam.

    PubMed

    Wang, Ding; Wang, Yuqiu; Chen, Xiaodong; Zhu, Yuankun; Zhan, Ke; Cheng, Hongbin; Wang, Xianying

    2016-02-21

    A layer-controlled two-dimensional (2D) molybdenum disulfide (MoS2) film with tunable bandgaps is highly desired for the fabrication of electronic/photoelectronic devices. In this work, we demonstrate that a focused ion beam (FIB) can be applied to thin MoS2 films layer-by-layer. The layer number can be controlled by simply changing the Ga(+) beam exposure time and the thinning speed is about half a layer per second. OM, AFM, PL and Raman spectra were used to monitor the change of layer numbers and characterize the morphology, thickness, and homogeneity of MoS2 films. The FIB layer-by-layer thinning technology will establish a new methodology for rationally thinning all kinds of 2D layered materials. PMID:26821788

  12. The interfacial properties of SrRuO3/MoS2 heterojunction: a first-principles study

    NASA Astrophysics Data System (ADS)

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Ling-Zhi; Cai, Meng-Qiu

    2016-03-01

    First-principles calculation was used to study the interfacial properties of the SrRuO3 (1 1 1)/MoS2(√3 × √3) heterojunction. It is found that the huge magnetic moments in of monolayer MoS2 largely originate from the Ru-S hybridization for the Ru-terminated interface. Moreover, for the SrO-terminated interface, we studied mainly the metal and semiconductor contact characteristic. The calculated results show that the Schottky barrier height can be significantly reduced to zero for the SrO-terminated interface. Schottky barrier heights dominate the transport behavior of the SrRuO3/MoS2 interface. Our results not only have potential applications in spintronics devices, but also are in favour of the scaling of field effect transistors.

  13. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

    PubMed

    Amani, Matin; Burke, Robert A; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

    2016-07-26

    One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5-10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2. PMID:27291297

  14. The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy.

    PubMed

    Vancsó, Péter; Magda, Gábor Zsolt; Pető, János; Noh, Ji-Young; Kim, Yong-Sung; Hwang, Chanyong; Biró, László P; Tapasztó, Levente

    2016-01-01

    MoS2 single layers have recently emerged as strong competitors of graphene in electronic and optoelectronic device applications due to their intrinsic direct bandgap. However, transport measurements reveal the crucial role of defect-induced electronic states, pointing out the fundamental importance of characterizing their intrinsic defect structure. Transmission Electron Microscopy (TEM) is able to image atomic scale defects in MoS2 single layers, but the imaged defect structure is far from the one probed in the electronic devices, as the defect density and distribution are substantially altered during the TEM imaging. Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly resolve a high intrinsic concentration of individual sulfur atom vacancies, and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations. Experimental data on the intrinsic defect structure and the associated defect-bound electronic states that can be directly used for the interpretation of transport measurements are essential to fully understand the operation, reliability and performance limitations of realistic electronic devices based on MoS2 single layers. PMID:27445217

  15. Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene.

    PubMed

    Chen, Xiang; Park, Yong Ju; Das, Tanmoy; Jang, Houk; Lee, Jae-Bok; Ahn, Jong-Hyun

    2016-08-18

    Application-oriented patterned growth of transition metal dichalcogenides (TMDCs) and their heterojunctions is of critical importance for sophisticated, customized two-dimensional (2D) electronic and optoelectronic devices; however, it is still difficult to fabricate these patterns in a simple, clean, and high controllability manner without using optical lithography. Here, we report the direct synthesis of patterned MoS2 and graphene-MoS2 heterojunctions via selective plasma treatment of a SiO2/Si substrate and chemical vapor deposition of MoS2. This method has multiple merits, such as simple steps, a short operating time, easily isolated MoS2 layers with clean surfaces and controllable locations, shapes, sizes and thicknesses, which enable their integration into the device structure without using a photoresist. In addition, we demonstrate the direct growth of patterned graphene-MoS2 heterojunctions for the fabrication of transistor. This study reveals a novel method to fabricate and use patterned MoS2 and graphene-MoS2 heterojunctions, which could be generalized to the rational design of other 2D materials, heterojunctions and devices in the future. PMID:27432242

  16. The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy

    PubMed Central

    Vancsó, Péter; Magda, Gábor Zsolt; Pető, János; Noh, Ji-Young; Kim, Yong-Sung; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2016-01-01

    MoS2 single layers have recently emerged as strong competitors of graphene in electronic and optoelectronic device applications due to their intrinsic direct bandgap. However, transport measurements reveal the crucial role of defect-induced electronic states, pointing out the fundamental importance of characterizing their intrinsic defect structure. Transmission Electron Microscopy (TEM) is able to image atomic scale defects in MoS2 single layers, but the imaged defect structure is far from the one probed in the electronic devices, as the defect density and distribution are substantially altered during the TEM imaging. Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly resolve a high intrinsic concentration of individual sulfur atom vacancies, and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations. Experimental data on the intrinsic defect structure and the associated defect-bound electronic states that can be directly used for the interpretation of transport measurements are essential to fully understand the operation, reliability and performance limitations of realistic electronic devices based on MoS2 single layers. PMID:27445217

  17. The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy

    NASA Astrophysics Data System (ADS)

    Vancsó, Péter; Magda, Gábor Zsolt; Pető, János; Noh, Ji-Young; Kim, Yong-Sung; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2016-07-01

    MoS2 single layers have recently emerged as strong competitors of graphene in electronic and optoelectronic device applications due to their intrinsic direct bandgap. However, transport measurements reveal the crucial role of defect-induced electronic states, pointing out the fundamental importance of characterizing their intrinsic defect structure. Transmission Electron Microscopy (TEM) is able to image atomic scale defects in MoS2 single layers, but the imaged defect structure is far from the one probed in the electronic devices, as the defect density and distribution are substantially altered during the TEM imaging. Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly resolve a high intrinsic concentration of individual sulfur atom vacancies, and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations. Experimental data on the intrinsic defect structure and the associated defect-bound electronic states that can be directly used for the interpretation of transport measurements are essential to fully understand the operation, reliability and performance limitations of realistic electronic devices based on MoS2 single layers.

  18. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

    PubMed Central

    Sercombe, D.; Schwarz, S.; Pozo-Zamudio, O. Del; Liu, F.; Robinson, B. J.; Chekhovich, E. A.; Tartakovskii, I. I.; Kolosov, O.; Tartakovskii, A. I.

    2013-01-01

    Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SixNy, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials. PMID:24336152

  19. Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Park, Youngseo; Baac, Hyoung Won; Heo, Junseok; Yoo, Geonwook

    2016-02-01

    Hysteresis, which is induced by both extrinsic and intrinsic causes, is often observed in molybdenum disulphide (MoS2) field-effect transistors (FETs), and several extrinsic hysteresis effects have been reported in unpassivated bottom-gate MoS2 device structures. In this study, interface-trap-induced hysteresis and other electrical properties are examined. We experimentally investigate thermally activated trap charges near a silicon-dioxide (SiO2)-MoS2 interface that gives rise to hysteresis in a multilayer MoS2 FET in a temperature region of 10-300 K. The threshold voltage (VTH) and field-effect mobility (μFE) decrease with the increase in temperature, regardless of the gate-bias sweep direction. The hysteresis that coincides with the trend of subthreshold swing increases sharply above T = 150 K as the released charges from interface traps become dominant over the fixed charges. Based on a temperature-dependent hysteresis analysis, we discussed the activation energy of interface traps and maximum interface trap density of the fabricated multilayer MoS2 FET.

  20. Devices Materials and Processes for Nanoelectronics: Characterization with Advanced X-Ray Techniques Using Lab-Based and Synchrotron Radiation Sources

    SciTech Connect

    E Zschech; C Wyon; C Murray; G Schneider

    2011-12-31

    Future nanoelectronics manufacturing at extraordinary length scales, new device structures, and advanced materials will provide challenges to process development and engineering but also to process control and physical failure analysis. Advanced X-ray techniques, using lab systems and synchrotron radiation sources, will play a key role for the characterization of thin films, nanostructures, surfaces, and interfaces. The development of advanced X-ray techniques and tools will reduce risk and time for the introduction of new technologies. Eventually, time-to-market for new products will be reduced by the timely implementation of the best techniques for process development and process control. The development and use of advanced methods at synchrotron radiation sources will be increasingly important, particularly for research and development in the field of advanced processes and new materials but also for the development of new X-ray components and procedures. The application of advanced X-ray techniques, in-line, in out-of-fab analytical labs and at synchrotron radiation sources, for research, development, and manufacturing in the nanoelectronics industry is reviewed. The focus of this paper is on the study of nanoscale device and on-chip interconnect materials, and materials for 3D IC integration as well.

  1. Layer-by-layer thinning of two-dimensional MoS2 films by using a focused ion beam

    NASA Astrophysics Data System (ADS)

    Wang, Ding; Wang, Yuqiu; Chen, Xiaodong; Zhu, Yuankun; Zhan, Ke; Cheng, Hongbin; Wang, Xianying

    2016-02-01

    A layer-controlled two-dimensional (2D) molybdenum disulfide (MoS2) film with tunable bandgaps is highly desired for the fabrication of electronic/photoelectronic devices. In this work, we demonstrate that a focused ion beam (FIB) can be applied to thin MoS2 films layer-by-layer. The layer number can be controlled by simply changing the Ga+ beam exposure time and the thinning speed is about half a layer per second. OM, AFM, PL and Raman spectra were used to monitor the change of layer numbers and characterize the morphology, thickness, and homogeneity of MoS2 films. The FIB layer-by-layer thinning technology will establish a new methodology for rationally thinning all kinds of 2D layered materials.A layer-controlled two-dimensional (2D) molybdenum disulfide (MoS2) film with tunable bandgaps is highly desired for the fabrication of electronic/photoelectronic devices. In this work, we demonstrate that a focused ion beam (FIB) can be applied to thin MoS2 films layer-by-layer. The layer number can be controlled by simply changing the Ga+ beam exposure time and the thinning speed is about half a layer per second. OM, AFM, PL and Raman spectra were used to monitor the change of layer numbers and characterize the morphology, thickness, and homogeneity of MoS2 films. The FIB layer-by-layer thinning technology will establish a new methodology for rationally thinning all kinds of 2D layered materials. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05768j

  2. Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2

    DOE PAGESBeta

    Yamaguchi, Hisato; Blancon, Jean-Christophe; Kappera, Rajesh; Lei, Sidong; Najmaei, Sina; Mangum, Benjamin D.; Gupta, Gautam; Ajayan, Pulickel M.; Lou, Jun; Chhowalla, Manish; et al

    2014-12-18

    A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towardsmore » the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.« less

  3. Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Qiu, Dongri; Lee, Dong Uk; Park, Chang Soo; Lee, Kyoung Su; Kim, Eun Kyu

    2015-10-01

    Unsuppressed carrier scattering from the underlying substrate in a layered two-dimensional material system is extensively observed, which degrades significantly the performance of devices. Beyond the material itself, understanding the intrinsic interfacial and surficial properties is an important issue for the analysis of a high-κ/MoS2 heterostructure. Here, we report on the electronic transport properties of bridge-channel MoS2 field-effect transistors fabricated by a contamination-free transfer method. After neglecting all the surrounding perturbations, it is possible to reveal the significant improvement of room-temperature mobility and subthreshold slope. A systematic study on variable-temperature transport measurements has quantified the trap density of states both in free-standing and SiO2-supported MoS2 systems. Compared to the bridge-channel MoS2 devices with an ideal interface, the unsuspended devices have a large amount of band tail states, and then the impact of their electronic states on the device performance is also discussed.Unsuppressed carrier scattering from the underlying substrate in a layered two-dimensional material system is extensively observed, which degrades significantly the performance of devices. Beyond the material itself, understanding the intrinsic interfacial and surficial properties is an important issue for the analysis of a high-κ/MoS2 heterostructure. Here, we report on the electronic transport properties of bridge-channel MoS2 field-effect transistors fabricated by a contamination-free transfer method. After neglecting all the surrounding perturbations, it is possible to reveal the significant improvement of room-temperature mobility and subthreshold slope. A systematic study on variable-temperature transport measurements has quantified the trap density of states both in free-standing and SiO2-supported MoS2 systems. Compared to the bridge-channel MoS2 devices with an ideal interface, the unsuspended devices have a large

  4. Muscle Volume Increases Following 16 Weeks of Resistive Exercise Training with the Advanced Resistive Exercise Device (ARED) and Free Weights

    NASA Technical Reports Server (NTRS)

    Nash, R. E.; Loehr, J. A.; Lee, S. M. C.; English, K. L.; Evans, H.; Smith, S. A.; Hagan, R. D.

    2009-01-01

    Space flight-induced muscle atrophy, particularly in the postural and locomotorymuscles, may impair task performance during long-duration space missions and planetary exploration. High intensity free weight (FW) resistive exercise training has been shown to prevent atrophy during bed rest, a space flight analog. NASA developed the Advanced Resistive Exercise Device (ARED) to simulate the characteristics of FW exercise (i.e. constant mass, inertial force) and to be used as a countermeasure during International Space Station (ISS) missions. PURPOSE: To compare the efficacy of ARED and FW training to induce hypertrophy in specific muscle groups in ambulatory subjects prior to deploying ARED on the ISS. METHODS: Twenty untrained subjects were assigned to either the ARED (8 males, 3 females) or FW (6 males, 3 females) group and participated in a periodizedtraining protocol consisting of squat (SQ), heel raise (HR), and deadlift(DL) exercises 3 d wk-1 for 16 wks. SQ, HR, and DL muscle strength (1RM) was measured before, after 8 wks, and after 16 wks of training to prescribe exercise and measure strength changes. Muscle volume of the vastigroup (V), hamstring group (H), hip adductor group (ADD), medial gastrocnemius(MG), lateral gastrocnemius(LG), and deep posterior muscles including soleus(DP) was measured using MRI pre-and post-training. Consecutive cross-sectional images (8 mm slices with a 2 mm gap) were analyzed and summed. Anatomical references insured that the same muscle sections were analyzed pre-and post-training. Two-way repeated measures ANOVAs (p<0.05) were used to test for differences in muscle strength and volume between training devices. RESULTS: SQ, HR, and DL 1RM increased in both FW (SQ: 49+/-6%, HR: 12+/-2%, DL: 23+/-4%) and ARED (SQ: 31+/-4%, HR: 18+/-2%, DL: 23+/-3%) groups. Both groups increased muscle volume in the V (FW: 13+/-2%, ARED: 10+/-2%), H (FW: 3+/-1%, ARED: 3+/-1 %), ADD (FW: 15=/-2%, ARED: 10+/-1%), LG (FW: 7+/-2%, ARED: 4+/-1%), MG (FW

  5. Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2.

    PubMed

    Wang, Wenyi; Klots, Andrey; Prasai, Dhiraj; Yang, Yuanmu; Bolotin, Kirill I; Valentine, Jason

    2015-11-11

    Recently, there has been much interest in the extraction of hot electrons generated from surface plasmon decay, as this process can be used to achieve additional bandwidth for both photodetectors and photovoltaics. Hot electrons are typically injected into semiconductors over a Schottky barrier between the metal and semiconductor, enabling generation of photocurrent with below bandgap photon illumination. As a two-dimensional semiconductor single and few layer molybdenum disulfide (MoS2) has been demonstrated to exhibit internal photogain and therefore becomes an attractive hot electron acceptor. Here, we investigate hot electron-based photodetection in a device consisting of bilayer MoS2 integrated with a plasmonic antenna array. We demonstrate sub-bandgap photocurrent originating from the injection of hot electrons into MoS2 as well as photoamplification that yields a photogain of 10(5). The large photogain results in a photoresponsivity of 5.2 A/W at 1070 nm, which is far above similar silicon-based hot electron photodetectors in which no photoamplification is present. This technique is expected to have potential use in future ultracompact near-infrared photodetection and optical memory devices. PMID:26426510

  6. The MOS-type DEPFET pixel sensor for the ILC environment

    NASA Astrophysics Data System (ADS)

    Andricek, L.; Fischer, P.; Heinzinger, K.; Herrmann, S.; Herz, D.; Karagounis, M.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Moser, H.-G.; Peric, I.; Reuen, L.; Richter, R. H.; Sandow, C.; Schnecke, M.; Schopper, F.; Strüder, L.; Törne, E. V.; Treis, J.; Trimpl, M.; Velthuis, J.; Wermes, N.; Wölfel, S.

    2006-09-01

    A new generation of MOS-type DEPFET active pixel sensors in double metal/double poly technology with ˜25 μm pixel size has been developed to meet the requirements of the vertex detector at the International Linear Collider (ILC). The paper presents the design and technology of the new linear MOS-type DEPFET sensors including a module concept and results of a feasibility study on how to build ultra-thin fully depleted sensors. One of the major challenges at the ILC is the dominant e +e - pair background from beam-beam interactions. The resulting high occupancy in the first layer of the vertex detector can be reduced by an extremely fast read out of the pixel arrays but the pair-produced electrons will also damage the sensor by ionization. Like all MOS devices, the DEPFET is inherently susceptible to ionizing radiation. The predominant effect of this kind of irradiation is the shift of the threshold voltage to more negative values due to the build up of positive oxide charges. The paper presents the first results of the irradiation of such devices with hard X-rays and gamma rays from a 60Co source up to 1 Mrad(Si) under various biasing conditions.

  7. Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

    PubMed

    Katagiri, Y; Nakamura, T; Ishii, A; Ohata, C; Hasegawa, M; Katsumoto, S; Cusati, T; Fortunelli, A; Iannaccone, G; Fiori, G; Roche, S; Haruyama, J

    2016-06-01

    Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers. PMID:27152475

  8. CFHT MOS/SIS spectrograph performance

    NASA Astrophysics Data System (ADS)

    Le Fevre, O.; Crampton, D.; Felenbok, P.; Monnet, G.

    1994-02-01

    Initial results of laboratory and on-sky tests of the new Canada-France-Hawaii Telescope (CFHT) multi-object spectrograph, metal oxide semiconductor (MOS)/superconducting / insulating / superconducting (SIS), are described. MOS/SIS contains two ways, one of which is primarily intended for imagery and spectroscopy of many tens of objects within a 10 min field, while the other utilizes tip/tilt image stabilization for high spatial resolution imagery and spectroscopy over a 3 min field. Data on image quality, transmission, flexure and stability are presented, as well as a description of the multi-object observing performance. This highly integrated system incorporates yttrium-aluminum garnet (YAG) laser drilling equipment and allows on-line acquisition, aperture mask design and fabrication for multi-slit observations with minimum overhead. A comprehensive software interface provides observers with a user-friendly environment and ensures that all operations can be quickly and efficiently controlled by novice users.

  9. Highly stretchable MoS2 kirigami.

    PubMed

    Hanakata, Paul Z; Qi, Zenan; Campbell, David K; Park, Harold S

    2016-01-01

    We report the results of classical molecular dynamics simulations focused on studying the mechanical properties of MoS2 kirigami. Several different kirigami structures were studied based upon two simple non-dimensional parameters, which are related to the density of cuts, as well as the ratio of the overlapping cut length to the nanoribbon length. Our key findings are significant enhancements in tensile yield (by a factor of four) and fracture strains (by a factor of six) as compared to pristine MoS2 nanoribbons. These results, in conjunction with recent results on graphene, suggest that the kirigami approach may be generally useful for enhancing the ductility of two-dimensional nanomaterials. PMID:26628005

  10. Highly stretchable MoS2 kirigami

    NASA Astrophysics Data System (ADS)

    Hanakata, Paul Z.; Qi, Zenan; Campbell, David K.; Park, Harold S.

    2015-12-01

    We report the results of classical molecular dynamics simulations focused on studying the mechanical properties of MoS2 kirigami. Several different kirigami structures were studied based upon two simple non-dimensional parameters, which are related to the density of cuts, as well as the ratio of the overlapping cut length to the nanoribbon length. Our key findings are significant enhancements in tensile yield (by a factor of four) and fracture strains (by a factor of six) as compared to pristine MoS2 nanoribbons. These results, in conjunction with recent results on graphene, suggest that the kirigami approach may be generally useful for enhancing the ductility of two-dimensional nanomaterials.

  11. MOS and MOSFET with transition metal oxides

    SciTech Connect

    Fu, S.; Egami, T.

    1996-12-31

    MOS and MOSFET structures were constructed with a TiO{sub 2} single crystal as a substrate. It was demonstrated that the n-type carriers injected by the applied gate field have a much higher mobility than the chemically doped carriers, by nearly two orders of magnitude. This result suggests that the intrinsic carrier mobility in TiO{sub 2} may be substantially higher than usually assumed. Other MOSFET effects including the non-linear optical effects are discussed.

  12. Thermo-mechanical analysis of fixed mask 1 for the Advanced Photon Source insertion device front ends

    SciTech Connect

    Nian, H.L.T.; Shu, D.; Sheng, I.C.A.; Kuzay, T.M.

    1993-10-01

    The first fixed mask (FM1) is one of the critical elements on the insertion device front ends of the beamlines at the Advanced Photon Source (APS) now under construction at Argonne National Laboratory (ANL). The heat flux from the APS undulators is enormous. For example, FM1 placed at a distance of 16 m from the Undulator A source will be subjected to 519 W/mm{sup 2} at normal incidence with a total power of 3.8 kW. Due to a high localized thermal gradient on this component, inclined geometry (1.5{degree}) is used in the design to spread the footprint of the x-ray beam. A box-cone-shape geometry was designed due to the limited space available in the front end. The box shape is a highly constrained geometry, which induces larger stress levels than would occur in a plate or a tube. In order to handle the expected higher stress and the stress concentration at the corners, a single Glidcop block (rather than copper) was used in the construction. The FM1 uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm{sup 2}{center_dot}{degree}C with single-phase water as the coolant. The authors simulated the location of the x-ray beam in several places to cover the worst possible case. The maximum temperature (about 180{degree}C) occurs when the beam hits the center of horizontal surface. The maximum effective stress (about 313 MPa) occurs when the x-ray beam hits about the corners.

  13. The Interlayer Resistance of a Misoriented Bilayer MoS2 Interface

    NASA Astrophysics Data System (ADS)

    Zhou, Kuan; Wickramaratne, Darshana; Ge, Supeng; Lake, Roger

    The performance of electrical and opto-electronic devices with vertically stacked transition metal dichalcogenides (TMDCs) has been found to be degraded by the rotated interface between bilayer system.The band properties and interlayer coupling have been researched experimentally and computationally, however, the dependence of the interlayer resistance on the disorientation angle of the two layers forming bilayer MoS2 remains unknown. Ab-initio methods combined with non-equilibrium Greens functions are used to calculate the transport properties of the misoriented bilayer MoS2 system. The energy and angle dependence of the interlayer resistivity is determined. The difference between the electron and hole transmission properties is analyzed. The influence of spin polarization in the K valleys of the TMDC system is also been discussed.

  14. Some features of the electrophysical and photoelectric properties of MOS structures

    SciTech Connect

    Loskutova, E.A.; Davydov, V.N.; Lezina, T.D.

    1985-11-01

    Indium arsenide appears to be a promising material for creating microelectronic devices. The authors of this article maintain that the electrophysical characteristics of the InAs MOS structures have been insufficiently studied in comparison with those of the other III-V compounds and that there is practically no knowledge of photoelectric characteristics for these MOS structures. Noted is the presence of intense interaction processes of free carriers with states in the anodic oxide film (AOF) and at the AOF-InAs interface which to a substantial degree determine the form of the electrophysical and photoelectric characteristics of the structures and their behavior with a change of the measurement conditions. It is proposed that the mechanism for carrier generation and recombination in the structure is multistep Shockley-Read-Hall processes with participation of multiply charged centers.

  15. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    PubMed Central

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination. PMID:26179885

  16. Target Capture during Mos1 Transposition*

    PubMed Central

    Pflieger, Aude; Jaillet, Jerôme; Petit, Agnès; Augé-Gouillou, Corinne; Renault, Sylvaine

    2014-01-01

    DNA transposition contributes to genomic plasticity. Target capture is a key step in the transposition process, because it contributes to the selection of new insertion sites. Nothing or little is known about how eukaryotic mariner DNA transposons trigger this step. In the case of Mos1, biochemistry and crystallography have deciphered several inverted terminal repeat-transposase complexes that are intermediates during transposition. However, the target capture complex is still unknown. Here, we show that the preintegration complex (i.e., the excised transposon) is the only complex able to capture a target DNA. Mos1 transposase does not support target commitment, which has been proposed to explain Mos1 random genomic integrations within host genomes. We demonstrate that the TA dinucleotide used as the target is crucial both to target recognition and in the chemistry of the strand transfer reaction. Bent DNA molecules are better targets for the capture when the target DNA is nicked two nucleotides apart from the TA. They improve strand transfer when the target DNA contains a mismatch near the TA dinucleotide. PMID:24269942

  17. WEAVE MOS fibre bundle test plan

    NASA Astrophysics Data System (ADS)

    Sayède, Frédéric; Guinouard, Isabelle; Fasola, Gilles; Lhome, Emilie; Amans, Jean-Philippe; Bonifacio, Piercarlo; Abrams, Don Carlos; Middleton, Kevin; Dalton, Gavin; Aguerri, J. Alfonso L.; Trager, Scott C.; Loeb, Avi

    2014-07-01

    WEAVE is the next-generation wide-field optical spectroscopy facility for the William Herschel Telescope (WHT) in La Palma, Canary Islands, Spain. WEAVE mainly aims at spectroscopic follow-up of ground-based (e.g. LOFAR) and space-based (GAIA) surveys. The facility consists of a new 2-degree field-of-view prime focus corrector with a 1000- multiplex fibre positioner, a small number of individually deployable integral field units, and a large single integral field unit. The IFUs (Integral Field Units) and the MOS fibres can be used to feed a dual-beam spectrograph that will provide full coverage of the majority of the visible spectrum in a single exposure at a spectral resolution of ~5000 or modest wavelength coverage in both arms at a resolution ~20000. The instrument is expected to be on-sky by 2017 to provide spectroscopic sampling of the fainter end of the Gaia astrometric catalogue, chemical labeling of stars to V~17, and dedicated follow up of substantial numbers of sources from the medium deep LOFAR surveys. After a brief description of the MOS fibre bundle, we described the proposed test plan and the test bench of the 2x1000 WEAVE MOS fibres. The test bench allows us to evaluate the Focal Ratio Degradation and the throughput of the fibers fitted with their buttons and slitlets.

  18. Exciton and Trion Dynamics in Bilayer MoS2.

    PubMed

    Pei, Jiajie; Yang, Jiong; Xu, Renjing; Zeng, Yong-Hui; Myint, Ye Win; Zhang, Shuang; Zheng, Jin-Cheng; Qin, Qinghua; Wang, Xibin; Jiang, Wugui; Lu, Yuerui

    2015-12-22

    The control of exciton and triondynamics in bilayer MoS2 is demonstrated, via the comodulations by both temperature and electric field. The calculations here show that the band structure of bilayer MoS2 changes from indirect at room temperature toward direct nature as temperature decreases, which enables the electrical tunability of the K-K direct PL transition in bilayer MoS2 at low temperature. PMID:26542884

  19. Rolling Up a Monolayer MoS2 Sheet.

    PubMed

    Meng, Jianling; Wang, Guole; Li, Xiaomin; Lu, Xiaobo; Zhang, Jing; Yu, Hua; Chen, Wei; Du, Luojun; Liao, Mengzhou; Zhao, Jing; Chen, Peng; Zhu, Jianqi; Bai, Xuedong; Shi, Dongxia; Zhang, Guangyu

    2016-07-01

    MoS2 nanoscrolls are formed by argon plasma treatment on monolayer MoS2 sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in MoS2 during the argon plasma treatment process. This convenient, solvent-free, and high-yielding nanoscroll formation technique is also feasible for other 2D transition metal dichalcogenides. PMID:27322776

  20. Experimental studies of MOS inversion and accumulation layers: Quantum mechanical effects and mobility

    NASA Astrophysics Data System (ADS)

    Chindalore, Gowrishankar L.

    The development of fast, multi-functional, and energy efficient integrated circuits, is made possible by aggressively scaling the gate lengths of the MOS devices into the sub-quarter micron regime. However, with the increasing cost of fabrication, there is a strong need for the development of reliable and accurate device simulation capabilities. The development of the theoretical models for simulators is guided by extensive experimental data, which enable an experimental verification of the models, and lead to a better understanding of the underlying physics. This dissertation presents the methodology and the results for one such experimental effort, where two important physical effects in the inversion layer and the accumulation layer of a MOS device, namely, the quantum mechanical (QM) effects and the carrier mobility are investigated. Accordingly, this dissertation has been divided into two parts, with the first part discussing the increase in the threshold voltage and the accumulation electrical oxide thickness due to QM effects. The second part discusses the methodology and the experimental results for the extraction of the majority carrier mobilities in the accumulation layers of a MOSFET. The continued scaling of the MOS gate length requires decreased gate oxide thickness (tox) and increased channel doping (NB) in order to improve device performance while suppressing the short- channel effects. The combination of the two result in large enough transverse electric fields to cause significant quantization of the carriers in the potential well at the Si/SiO2 interface. Hence, compared to the classical calculations (where the QM effects are ignored), the QM effects are found to lead to an increase in the experimental threshold voltage by approximately 100mV, and an overestimation of the physical oxide thickness by approximately 3-4A, in MOSFET devices with a gate oxide thickness and the doping level anticipated for technologies with sub-quarter micron gate