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Sample records for advanced mos devices

  1. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  2. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  3. Reducing Sodium Contamination in MOS Devices

    NASA Technical Reports Server (NTRS)

    Dehaye, R. F.; Feltner, W. R.

    1986-01-01

    Method of removing positive ions from oxides in metal-oxide-semiconductor (MOS) transistors and intergrated circuits ensure freedom from contamination by sodium and other mobile positive ions. Electric field applied during oxide growth to push mobile Na + ions to surface. After cooling from growth temperature, field turned off and Na + contaminated surface layer etched away. New method intended to suplement established methods of minimizing ion contamination, such as scrupulous cleanliness in processing, purging with hydrogen chloride to react with and remove contaminants, and growing extra-thick gate oxide, then etching it to remove large portion of contaminants concentrated near surface.

  4. Total Ionizing Dose Effects in MOS Oxides and Devices

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; McLean, F. B.

    2003-01-01

    The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

  5. Fast and slow border traps in MOS devices

    SciTech Connect

    Fleetwood, D.M.

    1995-09-01

    Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of fast (switching times between {approximately} 10{sup {minus}6} and 1 s) and slow (switching times greater than {approximately} 1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that different types of E{prime} defects (trivalent Si centers in SiO{sub 2} associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps.

  6. Effect of switched-bias bakes on the postirradiation electrical response of MOS devices

    SciTech Connect

    Fleetwood, D.M.; Shaneyfelt, M.R.; Riewe, L.C.; Winokur, P.S.

    1993-01-01

    Qualitatively different trends in postirradiation electrical response are observed in MOS devices after very long (up to 2.75-year) switched-bias bakes. A revised defect nomenclature is introduced, and implications for MOS defect models are discussed.

  7. Effect of switched-bias bakes on the postirradiation electrical response of MOS devices

    SciTech Connect

    Fleetwood, D.M.; Shaneyfelt, M.R.; Riewe, L.C.; Winokur, P.S.

    1993-03-01

    Qualitatively different trends in postirradiation electrical response are observed in MOS devices after very long (up to 2.75-year) switched-bias bakes. A revised defect nomenclature is introduced, and implications for MOS defect models are discussed.

  8. Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits

    NASA Astrophysics Data System (ADS)

    Nam, Hongsuk; Oh, Bo-Ram; Chen, Pengyu; Yoon, Jeong Seop; Wi, Sungjin; Chen, Mikai; Kurabayashi, Katsuo; Liang, Xiaogan

    2015-07-01

    We experimentally identify two different physics principles for operating MoS2 transistor biosensors, which depend on antibody functionalization locations. If antibodies are functionalized on an insulating layer coated on a MoS2 transistor, antibody-antigen binding events mainly modify the transistor threshold voltage, which can be explained by the conventional capacitor model. If antibodies are directly grafted on the MoS2 transistor channel, the binding events mainly modulate the ON-state transconductance of the transistor, which is attributed to the antigen-induced disordered potential in the MoS2 channel. This work advances the device physics for simplifying the transistor biosensor structures targeting for femtomolar-level quantification of biomolecules.

  9. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  10. Thermal management in MoS2 based integrated device using near-field radiation

    NASA Astrophysics Data System (ADS)

    Peng, Jiebin; Zhang, Gang; Li, Baowen

    2015-09-01

    Recently, wafer-scale growth of monolayer MoS2 films with spatial homogeneity is realized on SiO2 substrate. Together with the latest reported high mobility, MoS2 based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS2, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS2 to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS2 and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS2 sheet. Therefore, an efficient thermal management strategy for MoS2 integrated device is proposed: Graphene sheet is brought into close proximity, 10-20 nm from MoS2 device; heat energy transfer from MoS2 to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

  11. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    PubMed

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-08

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

  12. Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

    NASA Technical Reports Server (NTRS)

    Danchenko, V. (Inventor)

    1974-01-01

    A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

  13. MoS2 nanolayers grown on carbon nanotubes: an advanced reinforcement for epoxy composites.

    PubMed

    Zhou, Keqing; Liu, Jiajia; Shi, Yongqian; Jiang, Saihua; Wang, Dong; Hu, Yuan; Gui, Zhou

    2015-03-25

    In the present study, carbon nanotubes (CNTs) wrapped with MoS2 nanolayers (MoS2-CNTs) were facilely synthesized to obtain advanced hybrids. The structure of the MoS2-CNT hybrids was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy measurements. Subsequently, the MoS2-CNT hybrids were incorporated into EP for reducing fire hazards. Compared with pristine CNTs, MoS2-CNT hybrids showed good dispersion in EP matrix and no obvious aggregation of CNTs was observed. The obtained nanocomposites exhibited significant improvements in thermal properties, flame retardancy and mechanical properties, compared with those of neat EP and composites with a single CNT or MoS2. With the incorporation of 2.0 wt % of MoS2-CNT hybrids, the char residues and glass transition temperature (Tg) of the EP composite was significantly increased. Also, the addition of MoS2-CNT hybrids awarded excellent fire resistance to the EP matrix, which was evidenced by the significantly reduced peak heat release rate and total heat release. Moreover, the amount of organic volatiles from EP decomposition was obviously decreased, and the formation of toxic CO was effectively suppressed, implying the toxicity of the volatiles was reduced and smoke production was obviously suppressed. The dramatically reduced fire hazards were generally ascribed to the synergistic effect of MoS2 and CNTs, containing good dispersion of MoS2-CNT hybrids, catalytic char function of MoS2 nanolayers, and physical barrier effects of MoS2 nanolayers and CNT network structure.

  14. Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

    PubMed Central

    Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall; Riazimehr, Sarah; Schäfer-Eberwein, Heiko; Bablich, Andreas; Pawar, Ravinder; Iannaccone, Giuseppe; Downing, Clive; Fiori, Gianluca; Lemme, Max C.; Duesberg, Georg S.

    2014-01-01

    We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. PMID:24975741

  15. Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, S.; Overton, C.; Ardoin, I.

    2015-12-01

    The Ni/SiO2/n-type 4H SiC MOS devices have been fabricated for microelectronic device applications. The SiO2 layer employed in the MOS devices is grown by wet thermal oxidation process. The current-field characteristics of Ni/SiO2/n-type 4H SiC MOS devices are quiet interestingly studied by employing Fowler Nordheim (FN) conduction tunneling model, which is verified by theoretical simulation. It is learnt that the tunneling current through the barrier in the MOS devices promptly obeys the FN conduction tunneling mechanism. The simulation results show that the current in the MOS device increases and barrier height decreases with increasing temperature and internal electric field. Therefore, the correction factor for the barrier height of n-type 4H SiC/SiO2 MOS device due to the influence of both the temperature and internal electric field is employed. The barrier height observed by the experiments is apparently smaller than the simulated one of an ideal MOS device. However, after employing all the correction factors to the barrier height, the simulated current-field curves fairly coincide with the experimental results. The reason for obtaining smaller experimental barrier height for MOS devices is substantially explored with the support of current-field (J-F) analysis. On the other hand, this article comprehensively addresses the effects of quantum mechanical, interface trap density and thickness of 4H-SiC on the barrier height.

  16. Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen; Niebuhr, Jason; Cruz, Santana; Lamoreaux, chris

    2007-01-01

    The advanced resistive exercise device (ARED), now at the prototype stage of development, is a versatile machine that can be used to perform different customized exercises for which, heretofore, it has been necessary to use different machines. Conceived as a means of helping astronauts and others to maintain muscle and bone strength and endurance in low-gravity environments, the ARED could also prove advantageous in terrestrial settings (e.g., health clubs and military training facilities) in which many users are exercising simultaneously and there is heavy demand for use of exercise machines.

  17. Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices

    NASA Astrophysics Data System (ADS)

    Smithe, Kirby K. H.; English, Chris D.; Suryavanshi, Saurabh V.; Pop, Eric

    2017-03-01

    We demonstrate monolayer (1L) MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ˜1013 cm-2) and temperatures (80-500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>1012 cm-2). We demonstrate the highest current density reported to date (˜270 μA μm-1 or 44 MA cm-2) at 300 K for an 80 nm long device from CVD-grown 1L MoS2. Using simulations, we discuss what improvements of 1L MoS2 are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.

  18. Bias and Oxide Thickness Dependence of Trapped Charge Buildup in MOS devices

    DTIC Science & Technology

    1989-01-31

    CLASSIFICATION OF THIS PAGE Al other ediom are obsolete UNCLASSIFIED ACKNOWLEDGMENTS The authors would like to thank L W. Aukerman for his assistance... Aukerman , and T. C. Zietlow, "Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices," IEEE Trans. Nucl. Sci. NS-34, No. 6, 1196

  19. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

    PubMed Central

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K.; Das, Soumen; Ray, Samit K.

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  20. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  1. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  2. Comparison of enhanced device response and predicted x-ray dose enhancement effects on MOS oxides

    SciTech Connect

    Fleetwood, D.M.; Beutler, D.E.; Lorence, L.J. Jr.; Draper, B.L.; Brown, D.B.; Riewe, L.C.; Rosenstock, H.B.; Knott, D.P.

    1988-12-01

    The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate capacitors, and can be greater than a factor of 2 at applied electric fields below 0.1 MV/cm. For medium energy (-- 100 keV average photon energy) x-ray irradiations, the enhanced device response exhibits a much stronger dependence on endpoint bremsstrahlung energy than expected from TIGERP or CEPXS/ONETRAN simulations. Implications for hardness assurance testing are discussed.

  3. Time-domain charge pumping on silicon-on-insulator MOS devices

    NASA Astrophysics Data System (ADS)

    Watanabe, Tokinobu; Hori, Masahiro; Tsuchiya, Toshiaki; Fujiwara, Akira; Ono, Yukinori

    2017-01-01

    Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p-i-n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices.

  4. Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

    NASA Technical Reports Server (NTRS)

    Gourrier, S.; Mircea, A.; Simondet, F.

    1980-01-01

    The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

  5. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  6. Electrical Transport and Low-Frequency Noise in Chemical Vapor Deposited Single-Layer MoS2 Devices

    DTIC Science & Technology

    2014-03-18

    vapor deposited (CVD) single-layer molybdenum disulfide ( MoS2 ) based back-gated field-effect transistors (FETs). Electrical characterization and LFN...measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the...is unlimited. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices The views, opinions and/or findings

  7. Reduction in Susceptibility of MOS Devices to Radiation- and Electrically-Induced Defects

    DTIC Science & Technology

    2012-05-01

    AFRL-RV- PS - AFRL-RV- PS - TR-2012-0089 TR-2012-0089 REDUCTION IN SUSCEPTIBILITY OF MOS DEVICES TO RADIATION- AND ELECTRICALLY-INDUCED DEFECTS...including foreign nationals. Copies may be obtained from the Defense Technical Information Center (DTIC) (http://www.dtic.mil). AFRL-RV- PS ...Directorate AFRL/RVSE 3550 Aberdeen Ave, SE 11. SPONSOR/MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL-RV- PS -TR-2012-0089 12

  8. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

  9. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

    NASA Astrophysics Data System (ADS)

    Khan, Abdul Karim; Lee, Byoung Hun

    2016-09-01

    Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

  10. Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure

    NASA Astrophysics Data System (ADS)

    Tsukui, Tetsuya; Oda, Shunri

    1995-02-01

    We have proposed the trench-oxide metal-oxide-semiconductor (MOS) structure as a novel quantum wire device. In this paper we present results of computer simulation based on a self-consistent system and calculated quantized electron distribution and capacitance-voltage (C-V) characteristics. We have also fabricated the quantum wire MOS structure using electron beam lithography and electron cyclotron resonance reactive ion etching method and carried out measurements of C-V characteristics at 0.55 K. Possible evidence of one-dimensional quantum effect is obtained for the first time from C-V measurements using the 28 nm-wide trench-oxide structure.

  11. Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.

    PubMed

    Zhang, Peng; Gao, Cunxu; Xu, Benhua; Qi, Lin; Jiang, Changjun; Gao, Meizhen; Xue, Desheng

    2016-04-01

    The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.

  12. The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

    NASA Technical Reports Server (NTRS)

    Stassinopoulos, E. G.; Van Gunten, O.; Brucker, G. J.; Knudson, A. R.; Jordan, T. M.

    1983-01-01

    This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

  13. Er- and Nd-implanted MOS light emitting devices and their use for integrated photonic applications

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Wutzler, R.; Germer, S.; Lehmann, J.; Helm, M.; Skorupa, W.

    2012-06-01

    In the past, the suitability of Er for Si-based light emission was already investigated in detail. However, much less attention has been paid to Nd with its main electroluminescence (EL) line around 900 nm. In this study we compare the electrical and EL properties of Er- and Nd-implanted metal-oxide-semiconductor (MOS) structures where the dielectric stack is composed of the implanted SiO2 layer and a SiON buffer layer. Regarding the EL, the EL spectrum, the EL decay time and the EL efficiency were measured. The electrical characterization comprises current-voltage and capacitance-voltage measurements. Although the EL efficiency of Nd-implanted devices is by a factor of 5 to 10 lower than that of Er-based, the emission wavelength of Nd has some advantages compared to that of Er. Finally, based on these results the suitability of these two types of light emitters for integrated photonic devices is discussed.

  14. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  15. Preparation and electrical transport property study of MoS2 single-layer devices on different substrates

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyong; Lin, Zhisheng; Sachs, Ray; Feng, Ji; Shi, Jing

    2013-03-01

    Micro-exfoliated MoS2 flakes on SiO2/Si substrate are identified with optical microscope first and then atomic force microscopy and Raman spectroscopy. Nanodevices are subsequently prepared by E-beam lithography. The as-prepared MoS2 devices are n-type with a high sheet resistance (typically several MOhms). As a gate voltage is applied, a large gate modulation in sheet resistance is observed. At the highest negative gate voltage, the devices remain n-type but the resistance increases by at least 4 orders of magnitude. In the meantime, the current-voltage characteristics turn from linear to non-linear. The field-effect mobility extracted from the gate voltage dependence is about 10 cm2/Vs. To study the effect of the dielectric constant, we have developed a transfer technique that transfers entire working devices from SiO2/Si to any substrates. We have successfully applied the technique to graphene and obtained a relatively high yield. We are currently transferring MoS2 devices from SiO2/Si to strontium titanate (STO) substrate which has a much higher dielectric constant (300 at room temperature). Detailed experimental results and discussions will be presented. Research was supported in part by DOE and NSF/EECS.

  16. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    NASA Astrophysics Data System (ADS)

    Sengupta, Amretashis; Sarkar, Chandan Kumar; Requejo, Felix G.

    2011-10-01

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO2-SiO2 stack (stack-1) and the other with La2O3-SiO2 stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  17. Development and Evaluation of an Integrated Basic Combat/Advanced Individual Training Program for Medical Corpsmen (MOS 91A10).

    ERIC Educational Resources Information Center

    Ward, Joseph S.; And Others

    The Human Resources Research Organization undertook this study to determine experimentally the effect of integrating the Basic Combat Training (BCT) and the Advanced Individual Training (AIT) sequence of instruction for conscientious objector (CO) being trained as a Medical Corpsman (MOS 91A10). Other objectives were to develop an improved AIT…

  18. Towards intrinsic MoS2 devices for high performance arsenite sensing

    NASA Astrophysics Data System (ADS)

    Li, Peng; Zhang, Dongzhi; Sun, Yan'e.; Chang, Hongyan; Liu, Jingjing; Yin, Nailiang

    2016-08-01

    Molybdenum disulphide (MoS2) is one of the most attractive two dimensional materials other than graphene, and the exceptional properties make it a promising candidate for bio/chemical sensing. Nevertheless, intrinsic properties and sensing performances of MoS2 are easily masked by the presence of the Schottky barrier (SB) at source/drain electrodes, and its impact on MoS2 sensors remains unclear. Here, we systematically investigated the influence of the SB on MoS2 sensors, revealing the sensing mechanism of intrinsic MoS2. By utilizing a small work function metal, Ti, to reduce the SB, excellent electrical properties of this 2D material were yielded with 2-3 times enhanced sensitivity. We experimentally demonstrated that the sensitivity of MoS2 is superior to that of graphene. Intrinsic MoS2 was able to realize rapid detection of arsenite down to 0.1 ppb without the influence of large SB, which is two-fold lower than the World Health Organization (WHO) tolerance level and better than the detection limit of recently reported arsenite sensors. Additionally, accurately discriminating target molecules is a great challenge for sensors based on 2D materials. This work demonstrates MoS2 sensors encapsulated with ionophore film which only allows certain types of molecules to selectively permeate through it. As a result, multiplex ion detection with superb selectivity was realized. Our results show prominent advantages of intrinsic MoS2 as a sensing material.

  19. Impact of post metal annealing on gate work function engineering for advanced MOS applications

    NASA Astrophysics Data System (ADS)

    Kumar, S. Sachin; Prasad, Amitesh; Sinha, Amrita; Raut, Pratikhya; Das, Palash; Mahato, S. S.; Mallik, S.

    2016-05-01

    Ultra thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (Vfb) and hysteresis (ΔVfb) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impact of PMA on interface state density (Dit), border trap density (Nbt) and oxide trap density (Qf/q) of high-k gate stack were also examined for all the devices. The Nbt and frequency dispersion significantly reduces to ~2.77x1010 cm-2 and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x1012 eV-1cm-2 after PMA (350°C) in N2, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x1012 eV-1cm-2) after PMA.

  20. Dose-enhancement effects in TaSi/Al- and Al-gate MOS devices

    SciTech Connect

    Fleetwood, D.M.; Beutler, D.E.; Draper, B.L.; Knott, D.; Brown, D.B.; Rosenstock, H.

    1988-01-01

    The response of MOS capacitors with TaSi/Al and Al electrodes to medium- and low-energy x-irradiation is investigated. Experimentally measured dose-enhancement effects are compared with computer simulations for these structures.

  1. Quantum functional devices for advanced electronics

    NASA Astrophysics Data System (ADS)

    Yokoyama, N.; Muto, S.; Imamura, K.; Takatsu, M.; Mori, T.; Sugiyama, Y.; Sakuma, Y.; Nakao, H.; Adachihara, T.

    Recent research in semiconductor device technology seems to be focused on reducing the cost and power dissipation of traditional Si CMOS integrated circuits, rather than developing new and advanced semiconductor devices. We believe however, that devices enter the nanometer-scale regime in the next century, where quantum mechanical effects play an important role in the device's function; therefore, it is important to continue basic research into the physics and technology of nanometer scale structures and device applications in order to cultivate "nanoelectronics". This paper reviews our research activities on quantum functional devices and discusses our future research direction.

  2. Electrohydrodynamic printing for scalable MoS2 flake coating: application to gas sensing device

    NASA Astrophysics Data System (ADS)

    Lim, Sooman; Cho, Byungjin; Bae, Jaehyun; Kim, Ah Ra; Lee, Kyu Hwan; Kim, Se Hyun; Hahm, Myung Gwan; Nam, Jaewook

    2016-10-01

    Scalable sub-micrometer molybdenum disulfide ({{MoS}}2) flake films with highly uniform coverage were created using a systematic approach. An electrohydrodynamic (EHD) printing process realized a remarkably uniform distribution of exfoliated {{MoS}}2 flakes on desired substrates. In combination with a fast evaporating dispersion medium and an optimal choice of operating parameters, the EHD printing can produce a film rapidly on a substrate without excessive agglomeration or cluster formation, which can be problems in previously reported liquid-based continuous film methods. The printing of exfoliated {{MoS}}2 flakes enabled the fabrication of a gas sensor with high performance and reproducibility for {{NO}}2 and {{NH}}3.

  3. Thermoelectric Devices Advance Thermal Management

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Thermoelectric (TE) devices heat, cool, and generate electricity when a temperature differential is provided between the two module faces. In cooperation with NASA, Chico, California-based United States Thermoelectric Consortium Inc. (USTC) built a gas emissions analyzer (GEA) for combustion research. The GEA precipitated hydrocarbon particles, preventing contamination that would hinder precise rocket fuel analysis. The USTC research and design team uses patent-pending dimple, pin-fin, microchannel and microjet structures to develop and design heat dissipation devices on the mini-scale level, which not only guarantee high performance of products, but also scale device size from 1 centimeter to 10 centimeters. USTC continues to integrate the benefits of TE devices in its current line of thermal management solutions and has found the accessibility of NASA technical research to be a valuable, sustainable resource that has continued to positively influence its product design and manufacturing

  4. Center for advanced microstructures and devices (CAMD)

    NASA Astrophysics Data System (ADS)

    Craft, B. C.; Feldman, M.; Morikawa, E.; Poliakoff, E. D.; Saile, V.; Scott, J. D.; Stockbauer, R. L.

    1992-01-01

    The new synchrotron-radiation facility, Center for Advanced Microstructures and Devices, at Louisiana State University is described with regard to the status of installation of the storage ring, implementation of the various programs, and construction of the first beamlines.

  5. Insertion devices at the advanced photon source

    SciTech Connect

    Moog, E.R.

    1996-07-01

    The insertion devices being installed at the Advanced Photon Source cause the stored particle beam to wiggle, emitting x-rays with each wiggle. These x-rays combine to make an intense beam of radiation. Both wiggler and undulator types of insertion devices are being installed; the characteristics of the radiation produced by these two types of insertion devices are discussed, along with the reasons for those characteristics.

  6. Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors.

    PubMed

    Moon, Byoung Hee; Han, Gang Hee; Kim, Hyun; Choi, Homin; Bae, Jung Jun; Kim, Jaesu; Jin, Youngjo; Jeong, Hye Yun; Joo, Min-Kyu; Lee, Young Hee; Lim, Seong Chu

    2017-03-29

    Although monolayer transition metal dichalcogenides (TMDs) exhibit superior optical and electrical characteristics, their use in digital switching devices is limited by incomplete understanding of the metal contact. Comparative studies of Au top and edge contacts with monolayer MoS2 reveal a temperature-dependent ideality factor and Schottky barrier height (SBH). The latter originates from inhomogeneities in MoS2 caused by defects, charge puddles, and grain boundaries, which cause local variation in the work function at Au-MoS2 junctions and thus different activation temperatures for thermionic emission. However, the effect of inhomogeneities due to impurities on the SBH varies with the junction structure. The weak Au-MoS2 interaction in the top contact, which yields a higher SBH and ideality factor, is more affected by inhomogeneities than the strong interaction in the edge contact. Observed differences in the SBH and ideality factor in different junction structures clarify how the SBH and inhomogeneities can be controlled in devices containing TMD materials.

  7. A low power cryogenic 512 × 512-pixel infrared readout integrated circuit with modified MOS device model

    NASA Astrophysics Data System (ADS)

    Zhao, Hongliang; Liu, Xinghui; Xu, Chao

    2013-11-01

    A low power cryogenic readout integrated circuit (ROIC) for 512 × 512-pixel infrared focal plane array (IRFPA) image system, is presented. In order to improve the precision of the circuit simulation at cryogenic temperatures, a modified MOS device model is proposed. The model is based on BSIM3 model, and uses correction parameters to describe carrier freeze-out effect at low temperatures to improve the fitting accuracy for low temperature MOS device simulation. A capacitive trans-impedance amplifier (CTIA) with inherent correlated double sampling (CDS) configuration is employed to realize a high performance readout interfacing circuit in a pixel area of 30 × 30 μm2. Optimized column readout timing and structure are applied to reduce the power consumption. The experimental chip fabricated by a standard 0.35 μm 2P4M CMOS process shows more than 10 MHz readout rate with less than 70 mW power consumption under 3.3 V supply voltage at 77-150 K operated temperatures. And it occupies an area of 18 × 17 mm2.

  8. Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

    NASA Technical Reports Server (NTRS)

    Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

    1983-01-01

    This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

  9. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  10. Hierarchical MoS2 @Carbon Microspheres as Advanced Anodes for Li-Ion Batteries.

    PubMed

    Bai, Zhongchao; Zhang, Yaohui; Zhang, Yuwen; Guo, Chunli; Tang, Bin

    2015-12-07

    Hierarchical hybridized nanocomposites with rationally constructed compositions and structures have been considered key for achieving superior Li-ion battery performance owing to their enhanced properties, such as fast lithium ion diffusion, good collection and transport of electrons, and a buffer zone for relieving the large volume variations during cycling processes. Hierarchical MoS2 @carbon microspheres (HMCM) have been synthesized in a facile hydrothermal treatment. The structure analyses reveal that ultrathin MoS2 nanoflakes (ca. 2-5 nm) are vertically supported on the surface of carbon nanospheres. The reversible capacity of the HMCM nanocomposite is maintained at 650 mA h g(-1) after 300 cycles at 1 A g(-1) . Furthermore, the capacity can reach 477 mA h g(-1) even at a high current density of 4 A g(-1) . The outstanding electrochemical performance of HMCM is attributed to the synergetic effect between the carbon spheres and the ultrathin MoS2 nanoflakes. Additionally, the carbon matrix can supply conductive networks and prevent the aggregation of layered MoS2 during the charge/discharge process; and ultrathin MoS2 nanoflakes with enlarged surface areas, which can guarantee the flow of the electrolyte, provide more active sites and reduce the diffusion energy barrier of Li(+) ions.

  11. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Baykan, Mehmet Onur

    Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width

  12. Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

    2015-11-01

    We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

  13. Advanced Electro-Optic Surety Devices

    SciTech Connect

    Watterson, C.E.

    1997-05-01

    The Advanced Electro-Optic Surety Devices project was initiated in march 1991 to support design laboratory guidance on electro-optic device packaging and evaluation. Sandia National Laboratory requested AlliedSignal Inc., Kansas City Division (KCD), to prepare for future packaging efforts in electro-optic integrated circuits. Los Alamos National Laboratory requested the evaluation of electro-optic waveguide devices for nuclear surety applications. New packaging techniques involving multiple fiber optic alignment and attachment, binary lens array development, silicon V-groove etching, and flip chip bonding were requested. Hermetic sealing of the electro-optic hybrid and submicron alignment of optical components present new challenges to be resolved. A 10-channel electro-optic modulator and laser amplifier were evaluated for potential surety applications.

  14. Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

    2007-04-01

    Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

  15. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

    PubMed Central

    Preciado, Edwin; Schülein, Florian J.R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

    2015-01-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

  16. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3.

    PubMed

    Preciado, Edwin; Schülein, Florian J R; Nguyen, Ariana E; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J

    2015-10-23

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.

  17. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

    NASA Astrophysics Data System (ADS)

    Preciado, Edwin; Schülein, Florian J. R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I.-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

    2015-10-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.

  18. Compact modeling of total ionizing dose and aging effects in MOS technologies

    DOE PAGES

    Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

    2015-06-18

    This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimentalmore » I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.« less

  19. Compact modeling of total ionizing dose and aging effects in MOS technologies

    SciTech Connect

    Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

    2015-06-18

    This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

  20. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  1. Observation of radiation induced changes in stress and electrical properties in MOS devices

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Lowry, L.; Macwilliams, K. P.; Barnes, C. E.

    1992-01-01

    Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

  2. Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2

    PubMed Central

    Wang, Fang; Wang, Junyong; Guo, Shuang; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

    2017-01-01

    The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS2-WS2 heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS2-WSe2 and WS2-WSe2 heterostructure is less sensitive to the interlayer spacing than those from the MoS2-WS2 heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 based device applications. PMID:28303932

  3. Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2

    NASA Astrophysics Data System (ADS)

    Wang, Fang; Wang, Junyong; Guo, Shuang; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

    2017-03-01

    The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS2-WS2 heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS2-WSe2 and WS2-WSe2 heterostructure is less sensitive to the interlayer spacing than those from the MoS2-WS2 heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 based device applications.

  4. Comparative Study of Potential Applications of Graphene, MoS2, and Other Two-Dimensional Materials in Energy Devices, Sensors, and Related Areas.

    PubMed

    Rao, C N R; Gopalakrishnan, K; Maitra, Urmimala

    2015-04-22

    Novel properties of graphene have been well documented, whereas the importance of nanosheets of MoS2 and other chalcogenides is increasingly being recognized over the last two to three years. Borocarbonitrides, BxCyNz, with insulating BN and conducting graphene on either side are new materials whose properties have been attracting attention. These two-dimensional (2D) materials contain certain common features. Thus, graphene, MoS2, and borocarbonitrides have all been used in supercapacitor applications, oxygen reduction reactions (ORRs), and lithium-ion batteries. It is instructive, therefore, to make a comparative study of some of the important properties of these layered materials. In this article, we discuss properties related to energy devices at length. We examine the hydrogen evolution reaction facilitated by graphene, MoS2, and related materials. We also discuss gas and radiation sensors based on graphene and MoS2 as well as gas storage properties of graphene and borocarbonitrides. The article should be useful in making a judicious choice of which 2D material to use for a particular application.

  5. High Temperature Rectifiers and MOS Devices in 6H-Silicon Carbide

    DTIC Science & Technology

    1992-04-27

    silicon carbide which is the premiere semiconductor material for high temperature (and other) applications. One device is a high voltage, low current rectifier which can operate to at least 350 deg C for use in an igniter circuit. The developments required involved decreasing the doping level of the

  6. III-V/Ge MOS device technologies for low power integrated systems

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

    2016-11-01

    CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

  7. Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices

    NASA Astrophysics Data System (ADS)

    Vyas, P. B.; Naquin, C.; Edwards, H.; Lee, M.; Vandenberghe, W. G.; Fischetti, M. V.

    2017-01-01

    We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors [J. Appl. Phys. 118, 124505 (2015)]. In these devices, p+ doping extensions are introduced at the source-channel and drain-channel junctions, thus creating two potential barriers that define the quantum well across whose quasi-bound states resonant/sequential tunneling may occur. Our study, based on the quantum transmitting boundary method, predicts the presence of a sharp NDT in devices with a nominal gate length of 10-to-20 nm at low temperatures ( ˜10 K). At higher temperatures, the NDT weakens and disappears altogether as a result of increasing thermionic emission over the p+ potential barriers. In larger devices (with a gate length of 30 nm or longer), the NDT cannot be observed because of the low transmission probability and small energetic spacing (smaller than kBT ) of the quasi-bound states in the quantum well. We speculate that the inability of the model to predict the NDT observed in 40 nm gate-length devices may be due to an insufficiently accurate knowledge of the actual doping profiles. On the other hand, our study shows that NDT suitable for novel logic applications may be obtained at room temperature in devices of the current or near-future generation (sub-10 nm node), provided an optimal design can be found that minimizes the thermionic emission (requiring high p+ potential-barriers) and punch-through (that meets the opposite requirement of potential-barriers low enough to favor the tunneling current).

  8. Study of the use of Metal-Oxide-Silicon (MOS) devices for particulate detection and monitoring in the earth's atmosphere

    NASA Technical Reports Server (NTRS)

    Brooks, A. D.; Monteith, L. K.; Wortman, J. J.; Mulligan, J. C.

    1974-01-01

    A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.

  9. Structure and properties of WSi/sub 2/ thin films for MOS devices

    SciTech Connect

    Wu, L.K.

    1982-06-01

    Polycrystalline silicone has long been used as the gate and interconnection material in metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuits, but as the device dimensions are shrinking and circuits are growing larger, the relatively poor conductivity of poly-Si is limiting its performance. As an alternative, tungsten silicide on poly-Si is being considered. No research has yet been reported on the microstructure-properties of this system. In the present research, therefore, the annealing behaviors of coevaporated WSi/sub 2/ on p-doped poly-Si have been studied by x-ray diffraction, He/sup +/ - backscattering, transmission electron microscopy (TEM), and Auger/SIMS analysis. High temperature annealing of silicide results in crystallization of what appears to be amorphous layers of tungsten silicide as well as diffusion of phosphorous out of the poly-Si. An attempt is made to correlate the physical and chemical properties with device fabrication and performance.

  10. Plasma etching for advanced polymer optical devices

    NASA Astrophysics Data System (ADS)

    Bitting, Donald S.

    Plasma etching is a common microfabrication technique which can be applied to polymers as well as glasses, metals, and semiconductors. The fabrication of low loss and reliable polymer optical devices commonly makes use of advanced microfabrication processing techniques similar in nature to those utilized in standard semiconductor fabrication technology. Among these techniques, plasma/reactive ion etching is commonly used in the formation of waveguiding core structures. Plasma etching is a powerful processing technique with many potential applications in the emerging field of polymer optical device fabrication. One such promising application explored in this study is in the area of thin film-substrate adhesion enhancement. Two approaches involving plasma processing were evaluated to improve substrate-thin film adhesion in the production of polymer waveguide optical devices. Plasma treatment of polymer substrates such as polycarbonate has been studied to promote the adhesion of fluoropolymer thin film coatings for waveguide device fabrication. The effects of blanket oxygen plasma etchback on substrate, microstructural substrate feature formation, and the long term performance and reliability of these methods were investigated. Use of a blanket oxygen plasma to alter the polycarbonate surface prior to fluoropolymer casting was found to have positive but limited capability to improve the adhesive strength between these polymers. Experiments show a strong correlation between surface roughness and adhesion strength. The formation of small scale surface features using microlithography and plasma etching on the polycarbonate surface proved to provide outstanding adhesion strength when compared to any other known treatment methods. Long term environmental performance testing of these surface treatment methods provided validating data. Test results showed these process approaches to be effective solutions to the problem of adhesion between hydrocarbon based polymer

  11. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal-oxide-semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm-2 · eV-1) and gate leakage current (9.32 × 10-5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  12. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    NASA Astrophysics Data System (ADS)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-11-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

  13. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    PubMed Central

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-01-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. PMID:27811977

  14. ARED (Advanced-Resistive Exercise Device) Update

    NASA Technical Reports Server (NTRS)

    Ploutz-Snyder, Lori

    2009-01-01

    This viewgraph presentation describes ARED which is a new hardware exercise device for use on the International Space Station. Astronaut physiological adaptations, muscle parameters, and cardiovascular parameters are also reviewed.

  15. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  16. Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

    NASA Astrophysics Data System (ADS)

    Akin, Seçkİn; Sönmezoğlu, Savaş

    2015-09-01

    The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. The structural properties of the Cu:TiO2 nanoparticles have been obtained by means of X-ray diffraction (XRD), UV-Vis-NIR spectrometry, atomic force microscopy, and scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With the incorporation of Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed by XRD analysis. To understand the nature of this structure, the electronic parameters controlling the device performance were calculated using current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The ideality factor ( n) was 1.21 for the Al/Cu:TiO2/ p-Si MOS device, while the barrier height ϕ b was 0.75 eV with semi-log I- V characteristics. This is in good agreement with 0.78 eV measured by the Norde model. Possible reasons for the deviation of the ideality factor from unity have been addressed. From the C- V measurements, the values of diffusion potential, barrier height, and carrier concentration were extracted as 0.67, 0.98 eV, and 8.73 × 1013 cm-3, respectively. Our results encourage further work to develop process steps that would allow the Cu-doped TiO2 film/Si interface to play a major role in microelectronic applications.

  17. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  18. Guidewire-Controlled Advancement of the Amplatz Thrombectomy Device

    SciTech Connect

    Mueller-Huelsbeck, Stefan; Schwarzenberg, Helmut; Heller, Martin

    1998-01-15

    The Amplatz Thrombectomy Device (ATD) is a percutaneous rotational catheter proven to homogenize thrombus. The catheter design allows neither application over a coaxial running guidewire nor the use of the device as a monorail system. We report a technical modification that provides guided advancement of the catheter over a wire in order to prevent failure of application and to facilitate the interventional procedure.

  19. Femtosecond Optics: Advanced Devices and Ultrafast Phenomena

    DTIC Science & Technology

    2007-05-31

    periodically poled lithium niobate (PPLN), which already represents a significant advance . Gain is given by G=0.25(1+ exp(gl)), where for 7 t2 PPLN, g...H. Sotobayashi, J.T. Gopinath, and E.P. Ippen, ൟ cm long Bi20 3-based EDFA for picosecond pulse amplification with 80 nm gain bandwidth," IEEE...will be minimized by keeping the data in the optical domain. Such all- optical networks require advanced photonic technologies for a variety of

  20. Verification of Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC and n+ poly-Si/SiO2/n-4H SiC MOS devices by different models

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah

    2016-11-01

    This article emphasizes verification of Fowler-Nordheim electron tunneling mechanism in the Ni/SiO2/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current-field (J-F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J-F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

  1. Advanced silicon device technologies for optical interconnects

    NASA Astrophysics Data System (ADS)

    Wosinski, Lech; Wang, Zhechao; Lou, Fei; Dai, Daoxin; Lourdudoss, Sebastian; Thylen, Lars

    2012-01-01

    Silicon photonics is an emerging technology offering novel solutions in different areas requiring highly integrated communication systems for optical networking, sensing, bio-applications and computer interconnects. Silicon photonicsbased communication has many advantages over electric wires for multiprocessor and multicore macro-chip architectures including high bandwidth data transmission, high speed and low power consumption. Following the INTEL's concept to "siliconize" photonics, silicon device technologies should be able to solve the fabrication problems for six main building blocks for realization of optical interconnects: light generation, guiding of light including wavelength selectivity, light modulation for signal encoding, detection, low cost assembly including optical connecting of the devices to the real world and finally the electronic control systems.

  2. Advanced Interconnect and Device-Field Modeling

    DTIC Science & Technology

    2007-01-15

    Essaaidi NATO Advanced Research Workshop : Bianisotropics 2002, 99th Conference on Electromagnetics of Complex Media 8-11May, 2002, Marrakech , Morocco...Bianisotropics 2002, 99th Conference on Electromagnetics of Complex Media 8-11May, 2002, Marrakech , Morocco. Study of Substrates Bi-anisotropy Effects on...Conference on Electromagnetics of Complex Media 8-11May, 2002, Marrakech , Morocco. Dielectric Substrates Anisotropic Effects on The Characteristics of

  3. Advanced colour processing for mobile devices

    NASA Astrophysics Data System (ADS)

    Gillich, Eugen; Dörksen, Helene; Lohweg, Volker

    2015-02-01

    Mobile devices such as smartphones are going to play an important role in professionally image processing tasks. However, mobile systems were not designed for such applications, especially in terms of image processing requirements like stability and robustness. One major drawback is the automatic white balance, which comes with the devices. It is necessary for many applications, but of no use when applied to shiny surfaces. Such an issue appears when image acquisition takes place in differently coloured illuminations caused by different environments. This results in inhomogeneous appearances of the same subject. In our paper we show a new approach for handling the complex task of generating a low-noise and sharp image without spatial filtering. Our method is based on the fact that we analyze the spectral and saturation distribution of the channels. Furthermore, the RGB space is transformed into a more convenient space, a particular HSI space. We generate the greyscale image by a control procedure that takes into account the colour channels. This leads in an adaptive colour mixing model with reduced noise. The results of the optimized images are used to show how, e. g., image classification benefits from our colour adaptation approach.

  4. Direct growth of single- and few-layer MoS2 on h-BN by CVD method

    NASA Astrophysics Data System (ADS)

    Yan, Aiming; Velasco, Jairo, Jr.; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Crommie, Michael; Zettl, Alex

    As a promising candidate for the next-generation electronics, large-scale single- and few-layer molybdenum disulfide (MoS2) grown by CVD method is an important advancement towards technological implementation of this material. However, the choice of substrate can significantly affect the performance of MoS2 based devices. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method. The growth mechanisms for single- and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. In addition, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents a viable path towards high-quality MoS2 based field effect transistors in a controllable and scalable fashion. Acknowledgement: the U.S. Department of Energy under Contract DE-AC02-05CH11231; NSF Grant DMR-1206512.

  5. Silicon high speed modulator for advanced modulation: device structures and exemplary modulator performance

    NASA Astrophysics Data System (ADS)

    Milivojevic, Biljana; Wiese, Stefan; Whiteaway, James; Raabe, Christian; Shastri, Anujit; Webster, Mark; Metz, Peter; Sunder, Sanjay; Chattin, Bill; Anderson, Sean P.; Dama, Bipin; Shastri, Kal

    2014-03-01

    Fiber optics is well established today due to the high capacity and speed, unrivaled flexibility and quality of service. However, state of the art optical elements and components are hardly scalable in terms of cost and size required to achieve competitive port density and cost per bit. Next-generation high-speed coherent optical communication systems targeting a data rate of 100-Gb/s and beyond goes along with innovations in component and subsystem areas. Consequently, by leveraging the advanced silicon micro and nano-fabrication technologies, significant progress in developing CMOS platform-based silicon photonic devices has been made all over the world. These achievements include the demonstration of high-speed IQ modulators, which are important building blocks in coherent optical communication systems. In this paper, we demonstrate silicon photonic QPSK modulator based on a metal-oxide-semiconductor (MOS) capacitor structure, address different modulator configuration structures and report our progress and research associated with highspeed advanced optical modulation in silicon photonics

  6. Microscopy imaging device with advanced imaging properties

    DOEpatents

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2016-10-25

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  7. Microscopy imaging device with advanced imaging properties

    DOEpatents

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2016-11-22

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  8. Microscopy imaging device with advanced imaging properties

    DOEpatents

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2015-11-24

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  9. Future opportunities for advancing glucose test device electronics.

    PubMed

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-09-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano "ink" composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, "ink," and continuous processing development presents the opportunity for research collaboration with medical device designers.

  10. Future Opportunities for Advancing Glucose Test Device Electronics

    PubMed Central

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-01-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano “ink” composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, “ink,” and continuous processing development presents the opportunity for research collaboration with medical device designers. PMID:22027300

  11. Are bioresorbable polylactate devices comparable to titanium devices for stabilizing Le Fort I advancement?

    PubMed

    Blakey, G H; Rossouw, E; Turvey, T A; Phillips, C; Proffit, W R; White, R P

    2014-04-01

    The purpose of this study was to evaluate whether skeletal and dental outcomes following Le Fort I surgery differed when stabilization was performed with polylactate bioresorbable devices or titanium devices. Fifty-seven patients with preoperative records and at least 1 year postoperative records were identified and grouped according to the stabilization method. All cephalometric X-rays were traced and digitized by a single operator. Analysis of covariance was used to compare the postsurgical change between the two stabilization methods. Twenty-seven patients received bioresorbable devices (group R), while 30 received titanium devices (group M). There were no statistically significant differences between the two groups with respect to gender, race/ethnicity, age, or dental and skeletal movements during surgery. Subtle postsurgical differences were noted, but were not statistically significant. Stabilization of Le Fort I advancement with polylactate bioresorbable and titanium devices produced similar clinical outcomes at 1 year following surgery.

  12. Advanced photon source experience with vacuum chambers for insertion devices

    SciTech Connect

    Hartog, P.D.; Grimmer, J.; Xu, S.; Trakhtenberg, E.; Wiemerslage, G.

    1997-08-01

    During the last five years, a new approach to the design and fabrication of extruded aluminum vacuum chambers for insertion devices was developed at the Advanced Photon Source (APS). With this approach, three different versions of the vacuum chamber, with vertical apertures of 12 mm, 8 mm, and 5 mm, were manufactured and tested. Twenty chambers were installed into the APS vacuum system. All have operated with beam, and 16 have been coupled with insertion devices. Two different vacuum chambers with vertical apertures of 16 mm and 11 mm were developed for the BESSY-II storage ring and 3 of 16 mm chambers were manufactured.

  13. Advanced Sensor Fish Device for ImprovedTurbine Design

    SciTech Connect

    Carlson, Thomas J.

    2009-09-14

    Juvenile salmon (smolts) passing through hydroelectric turbines are subjected to environmental conditions that can potentially kill or injure them. Many turbines are reaching the end of their operational life expectancies and will be replaced with new turbines that incorporate advanced “fish friendly” designs devised to prevent injury and death to fish. To design a fish friendly turbine, it is first necessary to define the current conditions fish encounter. One such device used by biologists at Pacific Northwest National Laboratory was the sensor fish device to collect data that measures the forces fish experience during passage through hydroelectric projects.

  14. Mandibular Advancing Positive Pressure Apnea Remediation Device (MAPPARD)

    DTIC Science & Technology

    2014-06-01

    wiki/Starling_resistor Lankford, D. A., Proctor, C. D., & Richard, R. (2005). Continuous positive airway pressure (CPAP) changes in bariatric surgery ...Mandibular Advancing Device (after Schlaflabor-Saletu, n.d.). ............ 8  Figure 4.  Uvulopalatopharyngoplasty (before and after surgery ) (from...Lastly, when behavioral and medical techniques have been exhausted the last OSA reduction technique is surgery . Within the last 25 years, the

  15. Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Vogel, Eric M.; Brown, George A.

    2003-09-01

    Experimental measurements and simulations are used to provide an overview of key issues with the electrical characterization of metal-oxide-semiconductor (MOS) devices with ultra-thin oxide and alternate gate dielectrics. Experimental issues associated with the most common electrical characterization method, capacitance-voltage (C-V), are first described. Issues associated with equivalent oxide thickness extraction and comparison, interface state measurement, extrinsic defects, and defect generation are then overviewed.

  16. Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

    DTIC Science & Technology

    1982-02-01

    and DEIS 112-13-20,21 were 4-port devices of the type illustrated in (c). AP . A, and A, were 7.7 x 10-7, 1.0 X 10". and 4.8 x 10-6 for Cl-21-. 1.6 x 10...sites after electron capture. 98 29 a -COULOMBIC ATTRACTIvE 1 Ec-E HOTk Figre7. chmatc eprsetatonof otntil nery istibtio fr () colobq atrcie b eurl n C

  17. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  18. Insertion devices for the Advanced Light Source at LBL

    SciTech Connect

    Hassenzahl, W.; Chin, J.; Halbach, K.; Hoyer, E.; Humphries, D.; Kincaid, B.; Savoy, R.

    1989-03-01

    The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory will be the first of the new generation of dedicated synchrotron light sources to be put into operation. Specially designed insertion devices will be required to realize the high brightness photon beams made possible by the low emittance of the electron beam. The complement of insertion devices on the ALS will include undulators with periods as short as 3.9 cm and one or more high field wigglers. The first device to be designed is a 5 m long, 5 cm period, hybrid undulator. The goal of very high brightness and high harmonic output imposes unusually tight tolerances on the magnetic field quality and thus on the mechanical structure. The design process, using a generic structure for all undulators, is described. 5 refs., 4 figs., 1 tab.

  19. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted.

  20. Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

    DTIC Science & Technology

    1981-06-01

    Masouka, T. Sato, and M . Ishikawa, IEEE Trans. Electron Devices ED-23, 379 (1976). 23. M . Kikuchi, S. Ohya , and M . Yamagishi, Japan. J. App!. Phys. 17...34, at the Electrochemical Society Meeting, Minneapolis, Minnesota, May 10-15, 1981. 12. A. Reisman, J.M. Aitken, A.K. Ray, M . Berkenblit, C.J. Merz and...and Its Interfaces, ed. by S.T. Pantelides (Pergamon, New York, 1978), p. 160 and references contained therein. 5. M . Schutz, in Insulatinx Films on

  1. Integration of isothermal amplification methods in microfluidic devices: Recent advances.

    PubMed

    Giuffrida, Maria Chiara; Spoto, Giuseppe

    2017-04-15

    The integration of nucleic acids detection assays in microfluidic devices represents a highly promising approach for the development of convenient, cheap and efficient diagnostic tools for clinical, food safety and environmental monitoring applications. Such tools are expected to operate at the point-of-care and in resource-limited settings. The amplification of the target nucleic acid sequence represents a key step for the development of sensitive detection protocols. The integration in microfluidic devices of the most popular technology for nucleic acids amplifications, polymerase chain reaction (PCR), is significantly limited by the thermal cycling needed to obtain the target sequence amplification. This review provides an overview of recent advances in integration of isothermal amplification methods in microfluidic devices. Isothermal methods, that operate at constant temperature, have emerged as promising alternative to PCR and greatly simplify the implementation of amplification methods in point-of-care diagnostic devices and devices to be used in resource-limited settings. Possibilities offered by isothermal methods for digital droplet amplification are discussed.

  2. Hole-trapping/hydrogen transport (HT) sup 2 model for interface-trap buildup in MOS devices

    SciTech Connect

    Shaneyfelt, M.R.; Schwank, J.R.; Fleetwood, D.M.; Winokur, P.S.

    1990-01-01

    The electric field dependence of radiation-induced interface-trap formation has been reported to be different for metal-gate capacitors and polysilicon-gate capacitors and transistors. For metal-gate capacitors, interface-trap formation steadily increases with increasing positive field. On the other hand, for polysilicon-gate capacitors and transistors, interface-trap buildup peaks near fields of 1 MV/cm to 2 MV/cm and decreases with an approximate E{sup {minus}1/2} dependence at higher fields. The previously reported field dependence for interface-trap generation for Al-gate capacitors is consistent at all fields with McLean's physical explanation of the two-stage process, which depends on hydrogen ion (H {sup +}) release in the bulk of the oxide as radiation-induced holes transport to either interface via polaron hopping. Above 1 MV/cm, the field dependence of interface-trap buildup for polysilicon-gate devices is inconsistent with this model. Instead, it is similar to the field dependence for hole-trapping in SiO{sub 2}, suggesting that hole trapping may play a key role in interface-trap generation in Si-gate devices. However, recent studies of the time-dependence of interface-trap buildup have known that hole trapping cannot be the rate-limiting step in interface-trap buildup in polysilicon gate devices. Consistent with McLean's physical explanation of the two-stage process, the rate-limiting step in interface-trap formation appears to be H{sup +} transport to the Si/SiO{sub 2} interface. We will show that the electric field dependence of radiation-induced oxide- and interface-trap charge buildup for both polysilicon and metal-gate transistors follows an approximate E{sup {minus}1/2} field dependence over a wide range of electric fields when electron-hole recombination effects are included. Based on these results a hole trapping/hydrogen transport (HT){sup 2} model for interface-trap buildup is proposed.

  3. BATMAN: MOS Spectroscopy on Demand

    NASA Astrophysics Data System (ADS)

    Molinari, E.; Zamkotsian, F.; Moschetti, M.; Spano, P.; Boschin, W.; Cosentino, R.; Ghedina, A.; González, M.; Pérez, H.; Lanzoni, P.; Ramarijaona, H.; Riva, M.; Zerbi, F.; Nicastro, L.; Valenziano, L.; Di Marcantonio, P.; Coretti, I.; Cirami, R.

    2016-10-01

    Multi-Object Spectrographs (MOS) are the major instruments for studying primary galaxies and remote and faint objects. Current object selection systems are limited and/or difficult to implement in next generation MOS for space and ground-based telescopes. A promising solution is the use of MOEMS devices such as micromirror arrays, which allow the remote control of the multi-slit configuration in real time. TNG is hosting a novelty project for real-time, on-demand MOS masks based on MOEMS programmable slits. We are developing a 2048×1080 Digital-Micromirror-Device-based (DMD) MOS instrument to be mounted on the Galileo telescope, called BATMAN. It is a two-arm instrument designed for providing in parallel imaging and spectroscopic capabilities. With a field of view of 6.8×3.6 arcmin and a plate scale of 0.2 arcsec per micromirror, this astronomical setup can be used to investigate the formation and evolution of galaxies. The wavelength range is in the visible and the spectral resolution is R=560 for a 1 arcsec object, and the two arms will have 2k × 4k CCD detectors. ROBIN, a BATMAN demonstrator, has been designed, realized and integrated. We plan to have BATMAN first light by mid-2016.

  4. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  5. Advanced Measurement Devices for the Microgravity Electromagnetic Levitation Facility EML

    NASA Technical Reports Server (NTRS)

    Brillo, Jurgen; Fritze, Holger; Lohofer, Georg; Schulz, Michal; Stenzel, Christian

    2012-01-01

    This paper reports on two advanced measurement devices for the microgravity electromagnetic levitation facility (EML), which is currently under construction for the use onboard the "International Space Station (ISS)": the "Sample Coupling Electronics (SCE)" and the "Oxygen Sensing and Control Unit (OSC)". The SCE measures by a contactless, inductive method the electrical resistivity and the diameter of a spherical levitated metallic droplet by evaluating the voltage and electrical current applied to the levitation coil. The necessity of the OSC comes from the insight that properties like surface tension or, eventually, viscosity cannot seriously be determined by the oscillating drop method in the EML facility without knowing the conditions of the surrounding atmosphere. In the following both measurement devices are explained and laboratory test results are presented.

  6. One-step fabrication of large-area ultrathin MoS2 nanofilms with high catalytic activity for photovoltaic devices.

    PubMed

    Liang, Jia; Li, Jia; Zhu, Hongfei; Han, Yuxiang; Wang, Yanrong; Wang, Caixing; Jin, Zhong; Zhang, Gengmin; Liu, Jie

    2016-09-21

    Here we report a facile one-step solution-phase process to directly grow ultrathin MoS2 nanofilms on a transparent conductive glass as a novel high-performance counter electrode for dye-sensitized solar cells. After an appropriate reaction time, the entire surface of the conductive glass substrate was uniformly covered by ultrathin MoS2 nanofilms with a thickness of only several stacked layers. Electrochemical impedance spectroscopy and cyclic voltammetry reveal that the MoS2 nanofilms possess excellent catalytic activity towards tri-iodide reduction. When used in dye-sensitized solar cells, the MoS2 nanofilms show an impressive energy conversion efficiency of 8.3%, which is higher than that of a Pt-based electrode and very promising to be a desirable alternative counter electrode. Considering their ultrathin thickness, superior catalytic activity, simple preparation process and low cost, the as-prepared MoS2 nanofilms with high photovoltaic performance are expected to be widely employed in dye-sensitized solar cells.

  7. C-MOS array design techniques

    NASA Technical Reports Server (NTRS)

    Feller, A.

    1978-01-01

    The entire complement of standard cells and components, except for the set-reset flip-flop, was completed. Two levels of checking were performed on each device. Logic cells and topological layout are described. All the related computer programs were coded and one level of debugging was completed. The logic for the test chip was modified and updated. This test chip served as the first test vehicle to exercise the standard cell complementary MOS(C-MOS) automatic artwork generation capability.

  8. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann

    2016-12-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  9. [Device-aided therapies in advanced Parkinson's disease].

    PubMed

    Timofeeva, A A

    2016-01-01

    Advanced stages of Parkinson's disease (PD) is a consequence of the severe neurodegenerative process and are characterized by the development of motor fluctuations and dyskinesia, aggravation of non-motor symptoms. Treatment with peroral and transdermal drugs can't provide an adequate control of PD symptoms and quality-of-life of the patients at this stage of disease. Currently, three device-aided therapies: deep brain stimulation (DBS), intrajejunal infusion of duodopa, subcutaneous infusion of apomorphine can be used in treatment of patients with advanced stages of PD. Timely administration of device-aided therapies and right choice of the method determine, to a large extent, the efficacy and safety of their use. Despite the high efficacy of all three methods with respect to the fluctuation of separate symptoms, each method has its own peculiarities. The authors reviewed the data on the expediency of using each method according to the severity of motor and non-motor symptoms, patient's age, PD duration, concomitant pathology and social support of the patients.

  10. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  11. Insertion device operating experience at the Advanced Photon Source

    NASA Astrophysics Data System (ADS)

    Grimmer, John; Ramanathan, Mohan; Smith, Martin; Merritt, Michael

    2002-03-01

    The Advanced Photon Source has 29 insertion devices (IDs) installed in the 7 GeV electron storage ring; 28 of these devices, most of which are 3.3 cm period undulators, use two horizontal permanent magnet structures positioned over a straight vacuum chamber. A support and drive mechanism allows the vertical gap between the magnet structures to be varied, thus changing the x-ray energy produced by the ID [J. Viccaro, Proc. SPIE 1345, 28 (1990); E. Gluskin, J. Synchrotron Radiat. 5, 189 (1998)]. Most of these IDs use a drive scheme with two stepper motors, one driving each end through a mechanism synchronizing the upper and lower magnet structures. Our experience in almost 5 yr of operating this system will be discussed. All of the IDs are in continuous operation for approximately 10 weeks at a time. Reliability of operation is of paramount importance, as access to the storage ring for servicing of a single ID inhibits operation for all users. Our experience in achieving highly reliable ID operation is reviewed. Accuracy of operation and repeatability over time are also vital. To this end, these devices use absolute optical linear encoders with submicron resolution for primary position feedback. Absolute rotary encoders are used as a backup to the linear encoders. The benefits and limitations of each type of encoder, and our experience dealing with radiation and electrical noise are reviewed. The insertion devices operate down to gaps as small as 8.5 mm, with clearance over the vacuum chamber as small as 200 μm. The vacuum chamber has a minimum wall thickness of only 1 mm. A number of levels of safeguards are used to prevent contact between the magnet structure and the vacuum chamber. These safeguards and their evolution after gaining operational experience are presented.

  12. Radiation doses to insertion devices at the Advanced Photon Source

    SciTech Connect

    Moog, E.R.; Den Hartog, P.K.; Semones, E.J.; Job, P.K.

    1997-09-01

    Dose measurements made on and around the insertion devices (IDs) at the Advanced Photon Source are reported. Attempts are made to compare these dose rates to dose rates that have been reported to cause radiation-induced demagnetization, but comparisons are complicated by such factors as the particular magnet material and the techniques used in its manufacture, the spectrum and type of radiation, and the demagnetizing field seen by the magnet. The spectrum of radiation at the IDs. It has almost no effect on the dose to the downstream ends of the IDs, however, since much of the radiation travels through the ID vacuum chamber and cannot be readily shielded. Opening the gaps of the IDs during injection and at other times also helps decrease the radiation exposure.

  13. 78 FR 3319 - Amendments to Existing Validated End User Authorizations: Advanced Micro Devices China, Inc., Lam...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-16

    ... Authorizations: Advanced Micro Devices China, Inc., Lam Research Corporation, SK hynix Semiconductor (China) Ltd... Advanced Micro Devices China Inc.'s (AMD China) current list of eligible destinations. BIS also amends the...-User Authorizations in the PRC Revisions to the List of Eligible Destinations for Advanced...

  14. MoS2 monolayers on nanocavities: enhancement in light-matter interaction

    NASA Astrophysics Data System (ADS)

    Janisch, Corey; Song, Haomin; Zhou, Chanjing; Lin, Zhong; Elías, Ana Laura; Ji, Dengxin; Terrones, Mauricio; Gan, Qiaoqiang; Liu, Zhiwen

    2016-06-01

    Two-dimensional (2D) atomic crystals and van der Waals heterostructures constitute an emerging platform for developing new functional ultra-thin electronic and optoelectronic materials for novel energy-efficient devices. However, in most thin-film optical applications, there is a long-existing trade-off between the effectiveness of light-matter interactions and the thickness of semiconductor materials, especially when the materials are scaled down to atom thick dimensions. Consequently, enhancement strategies can introduce significant advances to these atomically thick materials and devices. Here we demonstrate enhanced absorption and photoluminescence generation from MoS2 monolayers coupled with a planar nanocavity. This nanocavity consists of an alumina nanolayer spacer sandwiched between monolayer MoS2 and an aluminum reflector, and can strongly enhance the light-matter interaction within the MoS2, increasing the exclusive absorption of monolayer MoS2 to nearly 70% at a wavelength of 450 nm. The nanocavity also modifies the spontaneous emission rate, providing an additional design freedom to control the interaction between light and 2D materials.

  15. 76 FR 48169 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-08

    ... Microbiology/ Medical Countermeasure Devices; Public Meeting AGENCY: Food and Drug Administration, HHS. ACTION... following public meeting: ``Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical... multiplexed microbiology/medical countermeasure (MCM) devices, their clinical application and public...

  16. Extended life testing evaluation of complementary MOS integrated circuits

    NASA Technical Reports Server (NTRS)

    Brosnan, T. E.

    1972-01-01

    The purpose of the extended life testing evaluation of complementary MOS integrated circuits was twofold: (1) To ascertain the long life capability of complementary MOS devices. (2) To assess the objectivity and reliability of various accelerated life test methods as an indication or prediction tool. In addition, the determination of a suitable life test sequence for these devices was of importance. Conclusions reached based on the parts tested and the test results obtained was that the devices were not acceptable.

  17. Near net shape forming of advanced structural ceramic devices

    NASA Astrophysics Data System (ADS)

    Liu, Hao-Chih

    This research applied a combination of rapid prototyping techniques and ceramic gelcasting processes in the design and manufacturing of advanced structural ceramic components that cannot be fabricated by other shape-forming processes. An Assembly Mold SDM process, a derivative process of Shape Deposition Manufacturing, was adopted along with modified gelcasting with great success. The fabricated gas turbine rotors, inlet nozzles, and mesoscale burner arrays have demonstrated superior shape accuracy, mechanical strength, and surface smoothness with a feature size of 200 mum. The design concepts and functionalities of the ceramic devices were verified with performance tests. The shape complexity and surface quality of ceramic parts have been further improved by the use of a mold assembly made of a low melting temperature metal alloy. The introduction of metal alloy required modifications in the mold design, machining procedure, and ceramic processing. A complete shape forming process (from slurry to final parts) was developed for the low melting temperature metal alloy. In addition, the choice of ceramic material now includes SiC, which is critical to the development of micro heat exchangers. Forty-channel, high-aspect-ratio structured SiC heat exchangers were fabricated, and the thermal conductivity value of SiC was found to be comparable to that of steel. The catalyst deposition and ceramic precursor impregnation processes were proposed to enable use of the SiC heat exchangers as micro reactors. Micro-electro-mechanical-systems (MEMS)-related techniques such as SU-8 deep photolithography and polydimethylsiloxane (PDMS) soft lithography were combined with gelcasting to make micro patterns on structural ceramics. A feature size of 125 mum and aspect ratio of 8 have been achieved in the preliminary experiments. Based on the fabricated ceramic devices, a graphical method to characterize the shape attributes of complex-shaped components was proposed and used to compare

  18. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Mekhiche, Mike; Dufera, Hiz; Montagna, Deb

    2012-10-29

    The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressed cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.

  19. MoS2 spaser

    NASA Astrophysics Data System (ADS)

    Jayasekara, Charith; Premaratne, Malin; Gunapala, Sarath D.; Stockman, Mark I.

    2016-04-01

    We present a comprehensive analysis of a spaser made of a circular shaped highly doped molybdenum disulfide (MoS2) resonator. "Spaser" is an acronym for "surface plasmon amplification by stimulated emission of radiation"-a nanoscale source of surface plasmons generated by stimulated emission in a plasmonic resonator which receives energy nonradiatively. By considering localized surface plasmon modes, operation characteristics of the model are analysed, and tunability of the design is demonstrated. We find the optimum geometric and material parameters of the spaser that provides efficient outputs and carryout a comparative analysis with a similar circular spaser made of graphene. Owing to physical and chemical properties of MoS2 and the active medium, the proposed design delivers efficient outputs in terms of spaser mode energy, operating thresholds, Q-factor, and electric field amplitude. Lower operating thresholds and higher mode energies are notable advantages of the design. Owing to having many superior features to existing similar designs, this MoS2 spaser may be much suited for applications in nanoplasmonic devices.

  20. Using advanced mobile devices in nursing practice--the views of nurses and nursing students.

    PubMed

    Johansson, Pauline; Petersson, Göran; Saveman, Britt-Inger; Nilsson, Gunilla

    2014-09-01

    Advanced mobile devices allow registered nurses and nursing students to keep up-to-date with expanding health-related knowledge but are rarely used in nursing in Sweden. This study aims at describing registered nurses' and nursing students' views regarding the use of advanced mobile devices in nursing practice. A cross-sectional study was completed in 2012; a total of 398 participants replied to a questionnaire, and descriptive statistics were applied. Results showed that the majority of the participants regarded an advanced mobile device to be useful, giving access to necessary information and also being useful in making notes, planning their work and saving time. Furthermore, the advanced mobile device was regarded to improve patient safety and the quality of care and to increase confidence. In order to continuously improve the safety and quality of health care, advanced mobile devices adjusted for nursing practice should be further developed, implemented and evaluated in research.

  1. Advanced Energy Harvesting Control Schemes for Marine Renewable Energy Devices

    SciTech Connect

    McEntee, Jarlath; Polagye, Brian; Fabien, Brian; Thomson, Jim; Kilcher, Levi; Marnagh, Cian; Donegan, James

    2016-03-31

    The Advanced Energy Harvesting Control Schemes for Marine Renewable Energy Devices (Project) investigated, analyzed and modeled advanced turbine control schemes with the objective of increasing the energy harvested by hydrokinetic turbines in turbulent flow. Ocean Renewable Power Company (ORPC) implemented and validated a feedforward controller to increase power capture; and applied and tested the controls on ORPC’s RivGen® Power Systems in Igiugig, Alaska. Assessments of performance improvements were made for the RivGen® in the Igiugig environment and for ORPC’s TidGen® Power System in a reference tidal environment. Annualized Energy Production (AEP) and Levelized Cost of Energy (LCOE) improvements associated with implementation of the recommended control methodology were made for the TidGen® Power System in the DOE reference tidal environment. System Performance Advancement (SPA) goals were selected for the project. SPA targets were to improve Power to Weight Ratio (PWR) and system Availability, with the intention of reducing Levelized Cost of Electricity (LCOE). This project focused primarily reducing in PWR. Reductions in PWR of 25.5% were achieved. Reductions of 20.3% in LCOE were achieved. This project evaluated four types of controllers which were tested in simulation, emulation, a laboratory flume, and the field. The adaptive Kω2 controller performs similarly to the non-adaptive version of the same controller and may be useful in tidal channels where the mean velocity is continually evolving. Trends in simulation were largely verified through experiments, which also provided the opportunity to test assumptions about turbine responsiveness and control resilience to varying scales of turbulence. Laboratory experiments provided an essential stepping stone between simulation and implementation on a field-scale turbine. Experiments also demonstrated that using “energy loss” as a metric to differentiate between well-designed controllers operating at

  2. Advanced fiber lasers and related all-fiber devices

    NASA Astrophysics Data System (ADS)

    Srinivasan, Balaji

    2000-11-01

    :ZBLAN. The demonstration of substantial second order nonlinearities (~1 pm/V) at UNM using thermal- assisted poling in normally symmetry forbidden silica glass has inspired worldwide research efforts aimed at achieving similar nonlinearities in fibers. All-fiber electro-optic devices based on such poled fibers are anticipated to enhance the performance of various lasers, including modelocked and tunable fiber lasers. This dissertation presents the first demonstration of stable, electro-optically tunable fiber Bragg gratings (FBGs) with a tuning range of 20 pm (2.5 GHz), which should enable applications such as reconfigurable add/drop filters and actively modelocked all-fiber lasers. Two key steps in the fabrication of the tunable FBGs viz. the fabrication of thermally stable FBGs, and a novel method for in-situ monitoring of fiber polishing are also demonstrated. Finally, this dissertation discusses issues related to the demonstration of all-fiber electro- optically tunable polarization rotators and their possible impact on future advanced fiber lasers.

  3. Point-of-Care (POC) Devices by Means of Advanced MEMS

    PubMed Central

    Karsten, Stanislav L.; Tarhan, Mehmet C.; Kudo, Lili C.; Collard, Dominique; Fujita, Hiroyuki

    2015-01-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications. PMID:26459443

  4. Durable left ventricular assist device therapy in advanced heart failure: Patient selection and clinical outcomes

    PubMed Central

    Shah, Sachin P.; Mehra, Mandeep R.

    2016-01-01

    The increasing adoption of left ventricular assist devices (LVADs) into clinical practice is related to a combination of engineering advances in pump technology and improvements in understanding the appropriate clinical use of these devices in the management of patients with advanced heart failure. This review intends to assist the clinician in identifying candidates for LVAD implantation, to examine long-term outcomes and provide an overview of the common complications related to use of these devices. PMID:27056652

  5. Density of states of the two-dimensional electron system at Si-MOS and Si-MNOS devices in the quantum Hall regime

    NASA Astrophysics Data System (ADS)

    Nachtwei, G.; Salchow, O.; Breitlow, C.; Jaeger, A.; Krüger, H.

    1991-07-01

    The measurement of activation energies for various positions of the Fermi level between two Landau levels provides an opportunity to evaluate the density of states (DOS) in the quantum Hall regime. We present results of measurements of the temperature dependence of the magnetoresistivity ϱxx at filling factors ν = 2 and ν = 4 for several Si-MOS and MNOS samples with the same layout but different insulator layers of SiO 2 or SiO 2/Si 3N 4, respectively. The Hall mobility of the MNOS structures is noticeably higher than that of the MOS structures, whereas the DOS determined from activation energy measurements is lower. The measured DOS is higher than the simple overlap of two adjacent Gaussian-shaped Landau bands with broadening parameters taken from the Hall mobility data. This can be explained by a constant background contribution to the DOS. For the i = 2 plateau an estimate of the effective Landé-factor can be given.

  6. Controllable Schottky Barriers between MoS2 and Permalloy

    PubMed Central

    Wang, Weiyi; Liu, Yanwen; Tang, Lei; Jin, Yibo; Zhao, Tongtong; Xiu, Faxian

    2014-01-01

    MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial progress has been made in improving device performance, the existence of metal-semiconductor Schottky barrier has not yet been fully understood. Here, we investigate permalloy (Py) contacts to both multilayer and monolayer MoS2. Ohmic contact is developed between multilayer MoS2 and Py electrodes with a negative Schottky barrier, which yields a high field-effect mobility exceeding 55 cm2V−1s−1 at low temperature. Further, by applying back gate voltage and inserting different thickness of Al2O3 layer between the metal and monolayer MoS2, we have achieved a good tunability of the Schottky barrier height (down to zero). These results are important in improving the performance of MoS2 transistor devices; and it may pave the way to realize spin transport and spin injection in MoS2. PMID:25370911

  7. Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation

    NASA Astrophysics Data System (ADS)

    Choi, J. H.; Jang, H.-K.; Jin, J. E.; Shin, J. M.; Kim, D.-H.; Kim, G.-T.

    2016-10-01

    Modulation of electrical properties in MoS2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS2 field effect transistors (FETs) can be easily obtained by heating MoS2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS2 + O2 → MoOx + SOx). The catalytic oxidation of MoS2 flakes between source-drain electrodes resulted in lots of MoOx nanoparticles (NPs) on MoS2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS2 FETs was converted into ambipolar transport characteristics by MoOx NPs which inject hole carriers to MoS2 flakes.

  8. Advanced Materials for Use in Soft Self-Healing Devices.

    PubMed

    Huynh, Tan-Phat; Sonar, Prashant; Haick, Hossam

    2017-02-23

    Devices integrated with self-healing ability can benefit from long-term use as well as enhanced reliability, maintenance and durability. This progress report reviews the developments in the field of self-healing polymers/composites and wearable devices thereof. One part of the progress report presents and discusses several aspects of the self-healing materials chemistry (from non-covalent to reversible covalent-based mechanisms), as well as the required main approaches used for functionalizing the composites to enhance their electrical conductivity, magnetic, dielectric, electroactive and/or photoactive properties. The second and complementary part of the progress report links the self-healing materials with partially or fully self-healing device technologies, including wearable sensors, supercapacitors, solar cells and fabrics. Some of the strong and weak points in the development of each self-healing device are clearly highlighted and criticized, respectively. Several ideas regarding further improvement of soft self-healing devices are proposed.

  9. Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes with enhanced photoluminescence.

    PubMed

    Yuan, Cailei; Cao, Yingjie; Luo, Xingfang; Yu, Ting; Huang, Zhenping; Xu, Bo; Yang, Yong; Li, Qinliang; Gu, Gang; Lei, Wen

    2015-11-07

    The precise control of the morphology and crystal shape of MoS2 nanostructures is of particular importance for their application in nanoelectronic and optoelectronic devices. Here, we describe a single step route for the synthesis of monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes using a chemical vapor deposition method. First-principles calculations demonstrated that the bandgap of the pyramid-like MoS2 nanodot is a direct bandgap. Enhanced local photoluminescence emission was observed in the pyramid-like MoS2 nanodot, in comparison with monolayered MoS2 flakes. The findings presented here provide new opportunities to tailor the physical properties of MoS2via morphology-controlled synthesis.

  10. Advanced integrated safeguards using front-end-triggering devices

    SciTech Connect

    Howell, J.A.; Whitty, W.J.

    1995-12-01

    This report addresses potential uses of front-end-triggering devices for enhanced safeguards. Such systems incorporate video surveillance as well as radiation and other sensors. Also covered in the report are integration issues and analysis techniques.

  11. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Hart, Philip R.

    2011-09-27

    This presentation from the Water Peer Review highlights one of the program's marine and hyrokinetics device design projects to scale up the current Ocean Power Technology PowerBuoy from 150kW to 500kW.

  12. To ventricular assist devices or not: When is implantation of a ventricular assist device appropriate in advanced ambulatory heart failure?

    PubMed Central

    Cerier, Emily; Lampert, Brent C; Kilic, Arman; McDavid, Asia; Deo, Salil V; Kilic, Ahmet

    2016-01-01

    Advanced heart failure has been traditionally treated via either heart transplantation, continuous inotropes, consideration for hospice and more recently via left ventricular assist devices (LVAD). Heart transplantation has been limited by organ availability and the futility of other options has thrust LVAD therapy into the mainstream of therapy for end stage heart failure. Improvements in technology and survival combined with improvements in the quality of life have made LVADs a viable option for many patients suffering from heart failure. The question of when to implant these devices in those patients with advanced, yet still ambulatory heart failure remains a controversial topic. We discuss the current state of LVAD therapy and the risk vs benefit of these devices in the treatment of heart failure. PMID:28070237

  13. Devices in the management of advanced, chronic heart failure

    PubMed Central

    Abraham, William T.; Smith, Sakima A.

    2013-01-01

    Heart failure (HF) is a global phenomenon, and the overall incidence and prevalence of the condition are steadily increasing. Medical therapies have proven efficacious, but only a small number of pharmacological options are in development. When patients cease to respond adequately to optimal medical therapy, cardiac resynchronization therapy has been shown to improve symptoms, reduce hospitalizations, promote reverse remodelling, and decrease mortality. However, challenges remain in identifying the ideal recipients for this therapy. The field of mechanical circulatory support has seen immense growth since the early 2000s, and left ventricular assist devices (LVADs) have transitioned over the past decade from large, pulsatile devices to smaller, more-compact, continuous-flow devices. Infections and haematological issues are still important areas that need to be addressed. Whereas LVADs were once approved only for ‘bridge to transplantation’, these devices are now used as destination therapy for critically ill patients with HF, allowing these individuals to return to the community. A host of novel strategies, including cardiac contractility modulation, implantable haemodynamic-monitoring devices, and phrenic and vagus nerve stimulation, are under investigation and might have an impact on the future care of patients with chronic HF. PMID:23229137

  14. Aircrew Training Devices: Utility and Utilization of Advanced Instructional Features. Phase 4. Summary Report.

    DTIC Science & Technology

    1987-11-01

    the automated instructional system on the Advanced Simulator for Pilot Training ( ASPT ) at Williams AF8, Arizona (Faconti & Epps, 1975; Faconti...Nortimer, & Simpson, 1970; Fuller, Waag, & Martin, 1980; Knoop, 1973). The ASPT is a sophisticated research device that incorporates advanced visual and...potential of the ASPT , Gray, Chun, Warner, and Eubanks (1981) found that SIs tended to use the device in a fairly conventional manner. with few

  15. Ferrite-superconductor devices for advanced microwave applications

    SciTech Connect

    Dionne, G.F.; Oates, D.E.; Temme, D.H.; Weiss, J.A.

    1996-07-01

    Microwave devices comprising magnetized ferrite in contact with superconductor circuits designed to eliminate magnetic field penetration of the superconductor have demonstrated phase shift without significant conduction losses. The device structures are adaptable to low- or high-{Tc} superconductors. A nonoptimized design of a ferrite phase shifter that employs niobium or YBCO meanderlines has produced over 1,000 degrees of differential phase shift with a figure of merit exceeding 1,000 degrees/dB at X band. By combining superconductor meanderline sections with alternating T junctions on a ferrite substrate in a configuration with three-fold symmetry, a low-loss three-port switching circulator has been demonstrated.

  16. A Comprehensive Microfluidics Device Construction and Characterization Module for the Advanced Undergraduate Analytical Chemistry Laboratory

    ERIC Educational Resources Information Center

    Piunno, Paul A. E.; Zetina, Adrian; Chu, Norman; Tavares, Anthony J.; Noor, M. Omair; Petryayeva, Eleonora; Uddayasankar, Uvaraj; Veglio, Andrew

    2014-01-01

    An advanced analytical chemistry undergraduate laboratory module on microfluidics that spans 4 weeks (4 h per week) is presented. The laboratory module focuses on comprehensive experiential learning of microfluidic device fabrication and the core characteristics of microfluidic devices as they pertain to fluid flow and the manipulation of samples.…

  17. Flexible low-power RF nanoelectronics in the GHz regime using CVD MoS2

    NASA Astrophysics Data System (ADS)

    Yogeesh, Maruthi

    Two-dimensional (2D) materials have attracted substantial interest for flexible nanoelectronics due to the overall device mechanical flexibility and thickness scalability for high mechanical performance and low operating power. In this work, we demonstrate the first MoS2 RF transistors on flexible substrates based on CVD-grown monolayers, featuring record GHz cutoff frequency (5.6 GHz) and saturation velocity (~1.8×106 cm/s), which is significantly superior to contemporary organic and metal oxide thin-film transistors. Furthermore, multicycle three-point bending results demonstrated the electrical robustness of our flexible MoS2 transistors after 10,000 cycles of mechanical bending. Additionally, basic RF communication circuit blocks such as amplifier, mixer and wireless AM receiver have been demonstrated. These collective results indicate that MoS2 is an ideal advanced semiconducting material for low-power, RF devices for large-area flexible nanoelectronics and smart nanosystems owing to its unique combination of large bandgap, high saturation velocity and high mechanical strength.

  18. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  19. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  20. A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Solaro, Yohann; Fonteneau, Pascal; Legrand, Charles-Alex; Marin-Cudraz, David; Golanski, Dominique; Ferrari, Philippe; Cristoloveanu, Sorin

    2016-11-01

    A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.

  1. Advances in nanoimprint lithography and applications in nanofluidic devices

    NASA Astrophysics Data System (ADS)

    Liang, Xiaogan

    The research work presented in this thesis focuses on three topics: (1) studies of several critical aspects of nanoimprint lithography (NIL), including methods of mold pressing, air bubble defects, and dynamic behaviors of liquid resist flow; (2) applications of NIL to the fabrication of novel nanofluidic devices, which can be used for real-time DNA detection; and (3) additional applications of structured stamps or templates in the direct engineering of functional materials. Based upon these topics, the thesis is divided into three parts. The first part describes recent studies of critical techniques of NIL. First, a novel imprint approach using electrostatic force was developed to pattern spin-on resists in ambient environment. Using this Electrostatic Force-Assisted NIL (EFAN) approach, highly uniform imprints over a 4" diameter wafer area and sub-0.5 mum overlay precision were obtained using very simple equipment. Second, another important method for performing step-and-repeat imprint in the atmosphere, dispensing-based NIL, still suffers from air bubble defects formed by feature pinning and the circling of residual air by the merge of multiple resist droplets. However, it was found that the tiny bubbles can be completely absorbed by the liquid resist. The effects of several key parameters, such as bubble size, imprinting pressure, resist viscosity and solubility, and residual layer thickness, on the air dissolution rate were studied experimentally and theoretically. Their impact to the yield and throughput of NIL was also analyzed. Third, a novel method was developed for filling liquid resists into the air gap between the structured mold and the substrate. The method is assisted by dielectrophoresis, caused by electrohydrodynamic force. The second part describes the applications of NIL to making nanofluidic channel devices and device integration. First, a novel imprint-based method was developed to fabricate precisely positioned single nanofluidic channels of

  2. Advanced semiconductor quantum well devices for infrared applications

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Vladimir V.

    High performance mid-wavelength infrared (MWIR) light emitting diodes (LEDs) are needed for chemical sensing, analysis and medical imaging. Efficient long wavelength infrared (LWIR) photodetectors are highly desirable for remote sensing and space exploration. The goal of this work is to investigate new mid-infrared LEDs and to optimize existing LWIR quantum well infrared photodetectors (QWIPs). Type-II "W" InAs/InGaSb/AlGaAsSb quantum wells were incorporated as optically active layers in MWIR LEDs. Influence of MBE crystal growth conditions on the density of Shockley-Read-Hall centers in the "W" quantum wells was studied and the optimal growth conditions were identified. A qualitative physical model was developed to describe relative importance of the radiative and non-radiative processes for various temperature ranges. MWIR LED structures lattice-matched to InAs and GaSb substrates were grown. Devices on InAs substrates were found to be at least twice as efficient as devices grown on GaSb. LEDs on InAs had 4.5 mum emission wavelength and 26.5 muW/A external efficiency. Possibility to operate GaAs/AIGaAs QWIP under normal-to-surface light incidence was studied. Metal nano-particle surface coating was developed and processes responsible for, light coupling into the QWIP were investigated. QWIP structure itself was optimized to eliminate Si-diffusion-assisted dark current enhancement by employing a new doping profile in the quantum wells. Devices with the new doping profile had an order of magnitude lower dark current and 20% higher photoresponse than commercially available QWIPs.

  3. River Devices to Recover Energy with Advanced Materials (River DREAM)

    SciTech Connect

    McMahon, Daniel P.

    2013-07-03

    The purpose of this project is to develop a generator called a Galloping Hydroelectric Energy Extraction Device (GHEED). It uses a galloping prism to convert water flow into linear motion. This motion is converted into electricity via a dielectric elastomer generator (DEG). The galloping mechanism and the DEG are combined to create a system to effectively generate electricity. This project has three research objectives: 1. Oscillator development and design a. Characterize galloping behavior, evaluate control surface shape change on oscillator performance and demonstrate shape change with water flow change. 2. Dielectric Energy Generator (DEG) characterization and modeling a. Characterize and model the performance of the DEG based on oscillator design 3. Galloping Hydroelectric Energy Extraction Device (GHEED) system modeling and integration a. Create numerical models for construction of a system performance model and define operating capabilities for this approach Accomplishing these three objectives will result in the creation of a model that can be used to fully define the operating parameters and performance capabilities of a generator based on the GHEED design. This information will be used in the next phase of product development, the creation of an integrated laboratory scale generator to confirm model predictions.

  4. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    SciTech Connect

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-06

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as {approx} 16 We/kg and {approx} 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is {approx} 640 m2 and {approx} 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is {approx} 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is {approx} 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  5. Advances in graphene-related technologies: synthesis, devices and outlook.

    PubMed

    Frazier, R M; Hough, W L; Chopra, N; Hathcock, K W

    2012-06-01

    Graphene has been the subject of many scientific investigations since exfoliation methods facilitated isolation of the two-dimensional material. During this time, new synthesis methods have been developed which have opened technological opportunities previously hindered by synthetic constraints. An update on the recent advances in graphene-based technologies, including synthesis and applications into electrical, mechanical and thermal uses will be covered. A special focus on the patent space and commercial landscape will be given in an effort to identify current trends and future commercialization of graphene-related technologies.

  6. Monitoring critical facilities by using advanced RF devices

    SciTech Connect

    Tsai, Hanchung; Liu, Yung Y.; Shuler, James

    2013-07-01

    The ability to monitor critical environment parameters of nuclear plants at all times, particularly during and after a disruptive accident, is vital for the safety of plant personnel, rescue and recovery crews, and the surrounding communities. Conventional hard-wired assets that depend on supplied power may be decimated as a result of such events, as witnessed in the Japanese Fukushima nuclear power plant in March 2011. Self-powered monitoring devices operating on a wireless platform, on the other hand, may survive such calamity and remain functional. The devices would be pre-positioned at strategic locations, particularly where the dangerous build-up of contamination and radiation may preclude subsequent manned entrance and surveillance. Equipped with sensors for β-γ radiation, neutrons, hydrogen gas, temperature, humidity, pressure, and water level, as well as with criticality alarms and imaging equipment for heat, video, and other capabilities, these devices can provide vital surveillance information for assessing the extent of plant damage, mandating responses (e.g., evacuation before impending hydrogen explosion), and enabling overall safe and efficient recovery in a disaster. A radio frequency identification (RFID)-based system - called ARG-US - may be modified and adapted for this task. Developed by Argonne for DOE, ARG-US (meaning 'watchful guardian') has been used successfully to monitor and track sensitive nuclear materials packages at DOE sites. It utilizes sensors in the tags to continuously monitor the state of health of the packaging and promptly disseminates alarms to authorized users when any of the preset sensor thresholds is violated. By adding plant-specific monitoring sensors to the already strong sensor suite and adopting modular hardware, firmware, and software subsystems that are tailored for specific subsystems of a plant, a Remote Area Modular Monitoring (RAMM) system, built on a wireless sensor network (WSN) platform, is being developed

  7. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  8. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  9. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  10. Case studies in advanced monitoring with the Chronicle device.

    PubMed

    Bourge, Robert C

    2006-01-01

    Three case studies illustrate the utility of advanced implantable hemodynamic monitors (IHMs). The cases include a 70-year-old with ischemic cardiomyopathy, chronic kidney disease, and recurrent volume overload; a 53-year-old with ischemic heart disease, mild effort-related angina, and New York Heart Association class III chronic heart failure; and a 21-year-old with severe dilated cardiomyopathy, all 3 patients having an IHM. The outcomes in these cases illustrate the capability of the IHM system for monitoring and detecting early changes in hemodynamic data and the use of these data to adjust medical therapies and reduce morbidity and risk of hospitalization. When pathologic hemodynamic changes are observed, this alerts the cardiologist to search for underlying causes, even when a patient on initial questioning denies any change in compliance or symptoms.

  11. Advance in novel boron nitride nanosheets to nanoelectronic device applications.

    PubMed

    Sajjad, Muhammad; Morell, Gerardo; Feng, Peter

    2013-06-12

    We report low-temperature synthesis of large-scale boron nitride nanosheets (BNNSs) and their applications for high-performance Schottky diode and gas sensor. Ten minutes of synthesis with a short-pulse-laser-produced plasma deposition technique yields a large amount of highly flat, transparent BNNSs. A basic reason for using short-pulse plasma beams is to avoid nanosheet thermal ablation or have low heat generated. Consequently, it greatly reduces the stress and yield large, flat BNNSs. The average size of obtained BNNS is around 10 μm and thickness is around 1.7 nm. Carbon element has been used for doping BNNSs and achieving BNNSs-based Schottky diode and gas sensing device. Typical current versus voltage characteristics of diode are examined. The breakdown reverse voltage is around -70 V. This probably indicates that the breakdown electric field of BNNSs-based diode is up to 1 × 10(8) V/cm. Sensing behavior of BNNSs-based gas sensor toward methane diluted with dry air is also characterized. The response time and recovery time are around 3 and 5 s at the operating temperature of 150 °C. Relatively, the sensor has poor sensitivity to oxygen gas.

  12. Advanced numerical methods and software approaches for semiconductor device simulation

    SciTech Connect

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  13. Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

    DOE PAGES

    Carey, Graham F.; Pardhanani, A. L.; Bova, S. W.

    2000-01-01

    In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of themore » methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.« less

  14. Advanced Controls for the Multi-pod Centipod WEC device

    SciTech Connect

    McCall, Alan; Fleming, Alex

    2016-02-15

    Dehlsen Associates, LLC (DA) has developed a Wave Energy Converter (WEC), Centipod, which is a multiple point absorber, extracting wave energy primarily in the heave direction through a plurality of point absorber floats sharing a common stable reference structure. The objective of this project was to develop advanced control algorithms that will be used to reduce Levelized Cost of Energy (LCOE). This project investigated the use of Model Predictive Control (MPC) to improve the power capture of the WEC. The MPC controller developed in this work is a state-space, “look ahead” controller approach using knowledge of past and current states to predict future states to take action with the PTO to maximize power capture while still respecting system constraints. In order to maximize power, which is the product of force and velocity, the controller must aim to create phase alignment between excitation force and velocity. This project showed a 161% improvement in the Annual Energy Production (AEP) for the Centipod WEC when utilizing MPC, compared to a baseline, fixed passive damping control strategy. This improvement in AEP was shown to provide a substantial benefit to the WEC’s overall Cost of Energy, reducing LCOE by 50% from baseline. The results of this work proved great potential for the adoption of Model Predictive Controls in Wave Energy Converters.

  15. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  16. Verification, Validation and Credibility Assessment of a Computational Model of the Advanced Resistive Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Werner, C. R.; Humphreys, B. T.; Mulugeta, L.

    2014-01-01

    The Advanced Resistive Exercise Device (ARED) is the resistive exercise device used by astronauts on the International Space Station (ISS) to mitigate bone loss and muscle atrophy due to extended exposure to microgravity (micro g). The Digital Astronaut Project (DAP) has developed a multi-body dynamics model of biomechanics models for use in spaceflight exercise physiology research and operations. In an effort to advance model maturity and credibility of the ARED model, the DAP performed verification, validation and credibility (VV and C) assessment of the analyses of the model in accordance to NASA-STD-7009 'Standards for Models and Simulations'.

  17. A Novel MOS Nanowire Gas Sensor Device (S3) and GC-MS-Based Approach for the Characterization of Grated Parmigiano Reggiano Cheese

    PubMed Central

    Sberveglieri, Veronica; Bhandari, Manohar Prasad; Núñez Carmona, Estefanía; Betto, Giulia; Sberveglieri, Giorgio

    2016-01-01

    To determine the originality of a typical Italian Parmigiano Reggiano cheese, it is crucial to define and characterize its quality, ripening period, and geographical origin. Different analytical techniques have been applied aimed at studying the organoleptic and characteristic volatile organic compounds (VOCs) profile of this cheese. However, most of the classical methods are time consuming and costly. The aim of this work was to illustrate a new simple, portable, fast, reliable, non-destructive, and economic sensor device S3 based on an array of six metal oxide semiconductor nanowire gas sensors to assess and discriminate the quality ranking of grated Parmigiano Reggiano cheese samples and to identify the VOC biomarkers using a headspace SPME-GC-MS. The device could clearly differentiate cheese samples varying in quality and ripening time when the results were analyzed by multivariate statistical analysis involving principal component analysis (PCA). Similarly, the volatile constituents of Parmigiano Reggiano identified were consistent with the compounds intimated in the literature. The obtained results show the applicability of an S3 device combined with SPME-GC-MS and sensory evaluation for a fast and high-sensitivity analysis of VOCs in Parmigiano Reggiano cheese and for the quality control of this class of cheese. PMID:27999300

  18. Co-Extrusion: Advanced Manufacturing for Energy Devices

    SciTech Connect

    Cobb, Corie Lynn

    2016-11-18

    The development of mass markets for large-format batteries, including electric vehicles (EVs) and grid support, depends on both cost reductions and performance enhancements to improve their economic viability. Palo Alto Research Center (PARC) has developed a multi-material, advanced manufacturing process called co-extrusion (CoEx) to remove multiple steps in a conventional battery coating process with the potential to simultaneously increase battery energy and power density. CoEx can revolutionize battery manufacturing across most chemistries, significantly lowering end-product cost and shifting the underlying economics to make EVs and other battery applications a reality. PARC’s scale-up of CoEx for electric vehicle (EV) batteries builds on a solid base of experience in applying CoEx to solar cell manufacturing, deposition of viscous ceramic pastes, and Li-ion battery chemistries. In the solar application, CoEx has been deployed commercially at production scale where multi-channel CoEx printheads are used to print viscous silver gridline pastes at full production speeds (>40 ft/min). This operational scale-up provided invaluable experience with the nuances of speed, yield, and maintenance inherent in taking a new technology to the factory floor. PARC has leveraged this experience, adapting the CoEx process for Lithium-ion (Li-ion) battery manufacturing. To date, PARC has worked with Li-ion battery materials and structured cathodes with high-density Li-ion regions and low-density conduction regions, documenting both energy and power performance. Modeling results for a CoEx cathode show a path towards a 10-20% improvement in capacity for an EV pouch cell. Experimentally, we have realized a co-extruded battery structure with a Lithium Nickel Manganese Cobalt (NMC) cathode at print speeds equivalent to conventional roll coating processes. The heterogeneous CoEx cathode enables improved capacity in thick electrodes at higher C-rates. The proof-of-principle coin cells

  19. Advanced upper limb prosthetic devices: implications for upper limb prosthetic rehabilitation.

    PubMed

    Resnik, Linda; Meucci, Marissa R; Lieberman-Klinger, Shana; Fantini, Christopher; Kelty, Debra L; Disla, Roxanne; Sasson, Nicole

    2012-04-01

    The number of catastrophic injuries caused by improvised explosive devices in the Afghanistan and Iraq Wars has increased public, legislative, and research attention to upper limb amputation. The Department of Veterans Affairs (VA) has partnered with the Defense Advanced Research Projects Agency and DEKA Integrated Solutions to optimize the function of an advanced prosthetic arm system that will enable greater independence and function. In this special communication, we examine current practices in prosthetic rehabilitation including trends in adoption and use of prosthetic devices, financial considerations, and the role of rehabilitation team members in light of our experiences with a prototype advanced upper limb prosthesis during a VA study to optimize the device. We discuss key challenges in the adoption of advanced prosthetic technology and make recommendations for service provision and use of advanced upper limb prosthetics. Rates of prosthetic rejection are high among upper limb amputees. However, these rates may be reduced with sufficient training by a highly specialized, multidisciplinary team of clinicians, and a focus on patient education and empowerment throughout the rehabilitation process. There are significant challenges emerging that are unique to implementing the use of advanced upper limb prosthetic technology, and a lack of evidence to establish clinical guidelines regarding prosthetic prescription and treatment. Finally, we make recommendations for future research to aid in the identification of best practices and development of policy decisions regarding insurance coverage of prosthetic rehabilitation.

  20. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  1. Aircrew Training Devices: Utility and Utilization of Advanced Instructional Features (Phase IV--Summary Report).

    ERIC Educational Resources Information Center

    Polzella, Donald J.; And Others

    Modern aircrew training devices (ATDs) are equipped with sophisticated hardware and software capabilities, known as advanced instructional features (AIFs), that permit a simulator instructor to prepare briefings, manage training, vary task difficulty/fidelity, monitor performance, and provide feedback for flight simulation training missions. The…

  2. Non-CPAP therapies in obstructive sleep apnoea: mandibular advancement device therapy.

    PubMed

    Marklund, Marie; Verbraecken, Johan; Randerath, Winfried

    2012-05-01

    Mandibular advancement devices (MADs) represent the main non-continuous positive airway pressure (non-CPAP) therapy for patients with obstructive sleep apnoea (OSA). The aim of the European Respiratory Society Task Force was to review the evidence in favour of MAD therapy. Effects of tongue-retaining devices are not included in this report. Custom-made MADs reduce apnoea/hypopnoea index (AHI) and daytime sleepiness compared with placebo devices. CPAP more effectively diminishes AHI, while increasing data suggest fairly similar outcomes in relation to symptoms and cardiovascular health from these treatments. Patients often prefer MADs to CPAP. Milder cases and patients with a proven increase in upper airway size as a result of mandibular advancement are most likely to experience treatment success with MADs. A custom-made device titrated from an initial 50% of maximum mandibular advancement has been recommended. More research is needed to define the patients who will benefit from MAD treatment compared with CPAP, in terms of the effects on sleep-disordered breathing and on other diseases related to OSA. In conclusion, MADs are recommended for patients with mild to moderate OSA (Recommendation Level A) and for those who do not tolerate CPAP. The treatment must be followed up and the device adjusted or exchanged in relation to the outcome.

  3. Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage

    NASA Astrophysics Data System (ADS)

    Kannan, N.; Kumar, M. Jagadesh

    2017-04-01

    In this paper, we have proposed a novel impact ionization MOS (I-MOS) structure, called the Schottky bipolar I-MOS, with Schottky source and drain electrodes and utilizing the open-base bipolar junction transistor (BJT) configuration for achieving reduction in the operating voltage of the I-MOS transistor. We report, using 2-D simulations, a low operating voltage (∼1.1 V) and a low subthreshold swing (∼3.6 mV/Decade). For the corresponding p-i-n I-MOS, the operating voltage is ∼5.5 V. The operating voltage of the Schottky bipolar I-MOS is the lowest reported operating voltage for silicon based I-MOS transistors. The nearly 80% reduction in the operating voltage of the Schottky bipolar I-MOS makes it suitable for applications requiring low operating voltages. The Schottky bipolar I-MOS is also expected to have an improved reliability over the p-i-n I-MOS since high energy carriers, induced by impact ionization near the drain, do not have to pass under the gate region in the channel. The use of Schottky contacts instead of heavily doped source and drain regions and the low channel doping level reduces the required thermal budget for device fabrication. The low operating voltage, low subthreshold swing and possibly improved reliability of the Schottky bipolar I-MOS, makes it a potential solution for applications where steep subthreshold slope transistors are being explored as alternative to the conventional MOS transistor.

  4. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures.

  5. Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region

    NASA Astrophysics Data System (ADS)

    Hong, Sung-min; Kim, Yong-Seok; Min, Hong S.; Park, Young June

    2003-05-01

    The characteristic potential method(CPM), which has been successfully applied to calculate 1/f noise and thermal noise of multi-terminal homogeneous semiconductor resistors, is extended to calculate 1/f noise in inhomogeneous devices such as MOSFETs. The drain 1/f noise current of MOSFETs in the linear region is calculated using the CPM together with the well-known existing 1/f noise sources based on either Hooge's empirical model or McWhorter's model, and the calculated results are compared with the experimental results. It is shown that the difference of the 1/f noise behaviour between n-MOSFETs and p-MOSFETs in the linear region can be attributed to either the difference in their effective field dependence between the local electron mobility and the local hole mobility near the Si-SiO2 interface in the inversion layer or the difference in degree of Nt(oxide trap density)dependence between the effective electron mobility and the effective hole mobility.

  6. Design and fabrication of memory devices based on nanoscale polyoxometalate clusters.

    PubMed

    Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N; Long, De-Liang; Georgiev, Vihar P; Asenov, Asen; Pedersen, Rasmus H; Gadegaard, Nikolaj; Mirza, Muhammad M; Paul, Douglas J; Poblet, Josep M; Cronin, Leroy

    2014-11-27

    Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2](4-) as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(v)2O6](2-) moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call 'write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

  7. AN ADVANCED CALIBRATION PROCEDURE FOR COMPLEX IMPEDANCE SPECTRUM MEASUREMENTS OF ADVANCED ENERGY STORAGE DEVICES

    SciTech Connect

    William H. Morrison; Jon P. Christophersen; Patrick Bald; John L. Morrison

    2012-06-01

    With the increasing demand for electric and hybrid electric vehicles and the explosion in popularity of mobile and portable electronic devices such as laptops, cell phones, e-readers, tablet computers and the like, reliance on portable energy storage devices such as batteries has likewise increased. The concern for the availability of critical systems in turn drives the availability of battery systems and thus the need for accurate battery health monitoring has become paramount. Over the past decade the Idaho National Laboratory (INL), Montana Tech of the University of Montana (Tech), and Qualtech Systems, Inc. (QSI) have been developing the Smart Battery Status Monitor (SBSM), an integrated battery management system designed to monitor battery health, performance and degradation and use this knowledge for effective battery management and increased battery life. Key to the success of the SBSM is an in-situ impedance measurement system called the Impedance Measurement Box (IMB). One of the challenges encountered has been development of an accurate, simple, robust calibration process. This paper discusses the successful realization of this process.

  8. Recent advances in medical device triage technologies for chemical, biological, radiological, and nuclear events.

    PubMed

    Lansdowne, Krystal; Scully, Christopher G; Galeotti, Loriano; Schwartz, Suzanne; Marcozzi, David; Strauss, David G

    2015-06-01

    In 2010, the US Food and Drug Administration (Silver Spring, Maryland USA) created the Medical Countermeasures Initiative with the mission of development and promoting medical countermeasures that would be needed to protect the nation from identified, high-priority chemical, biological, radiological, or nuclear (CBRN) threats and emerging infectious diseases. The aim of this review was to promote regulatory science research of medical devices and to analyze how the devices can be employed in different CBRN scenarios. Triage in CBRN scenarios presents unique challenges for first responders because the effects of CBRN agents and the clinical presentations of casualties at each triage stage can vary. The uniqueness of a CBRN event can render standard patient monitoring medical device and conventional triage algorithms ineffective. Despite the challenges, there have been recent advances in CBRN triage technology that include: novel technologies; mobile medical applications ("medical apps") for CBRN disasters; electronic triage tags, such as eTriage; diagnostic field devices, such as the Joint Biological Agent Identification System; and decision support systems, such as the Chemical Hazards Emergency Medical Management Intelligent Syndromes Tool (CHEMM-IST). Further research and medical device validation can help to advance prehospital triage technology for CBRN events.

  9. Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials

    DTIC Science & Technology

    1991-03-01

    Improved Quantum PE 61153N Device Properties Using Highly Strained Materials PE 1401N~R&T 414s 001-02 IN G. AUTHOR(S) (William J. Schaff , S.D. Offsey and...DECEMBER 15, 1989 CORNELL UNIVERSITY.......................... ITHACA, NY 14853-5401 PREPARED BY: WJ. Schaff ........ S.D. Offsey I - L.F. Eastman D ’’. i...Mandeville, R. Saito, P.J. Tasker, W.J. Schaff and L.F. Eastman, 12th IEEE/Comell Conference on’Advanced Concepts in High Speed Semiconductor Devices

  10. Development of advanced electron holographic techniques and application to industrial materials and devices.

    PubMed

    Yamamoto, Kazuo; Hirayama, Tsukasa; Tanji, Takayoshi

    2013-06-01

    The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming important techniques for materials science and device engineering. We also describe some applications of electron holography to the analysis of industrial materials and devices: GaAs compound semiconductors, solid oxide fuel cells and all-solid-state lithium ion batteries.

  11. Porous graphene materials for advanced electrochemical energy storage and conversion devices.

    PubMed

    Han, Sheng; Wu, Dongqing; Li, Shuang; Zhang, Fan; Feng, Xinliang

    2014-02-12

    Combining the advantages from both porous materials and graphene, porous graphene materials have attracted vast interests due to their large surface areas, unique porous structures, diversified compositions and excellent electronic conductivity. These unordinary features enable porous graphene materials to serve as key components in high-performance electrochemical energy storage and conversion devices such as lithium ion batteries, supercapacitors, and fuel cells. This progress report summarizes the typical fabrication methods for porous graphene materials with micro-, meso-, and macro-porous structures. The structure-property relationships of these materials and their application in advanced electrochemical devices are also discussed.

  12. Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

    PubMed

    Singh, Eric; Kim, Ki Seok; Yeom, Geun Young; Nalwa, Hari Singh

    2017-02-01

    Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), tungsten diselenide (WSe2), titanium disulfide (TiS2), tantalum sulfide (TaS2), and niobium selenide (NbSe2) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS2; and thereafter, emphasize the role of atomically thin MoS2 layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS2 has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS2/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the photovoltaic performance of MoS2 solar cells have been analyzed. After doping and electrical gating, a power-conversion efficiency (PCE) of 9.03% has been observed for the MoS2/h-BN/GaAs heterostructure solar cells. The MoS2-containing perovskites-based solar cells show a PCE as high as 13.3%. The PCE of MoS2-based organic solar cells exceeds 8.40%. The stability of MoS2 solar cells measured under ambient conditions and light illumination has been discussed. The MoS2-based materials show a great potential for solar cell devices along with high PCE; however, in this connection, their long-term environmental stability is also of equal importance for commercial applications.

  13. Substrate induced anomalous electrostatic and photoluminescence propeties of monolayer MoS2 edges

    NASA Astrophysics Data System (ADS)

    Hao, Song; Yang, Bingchu; Yuan, Jingye; Gao, Yongli

    2017-01-01

    Monolayer MoS2 is an emerging two-dimensional semiconductor with wide-ranging potential applications in the next generation electronic and optoelectronic devices. Understanding the influences of the supporting substrates on the physical properties of grown MoS2 is an important step toward its applications. Here we synthesized two typical rhomboid shaped MoS2 on MoO2 and triangle shaped MoS2 on SiO2/Si substrates and characterized them by multiple means of X-Ray Photoemission Spectroscopy, Atomic Force Microscopy, Electrostatic Force Microscopy, Raman and Photoluminescence techniques. We found that triangle shaped MoS2 exhibits different core level spectra compared with rhomboid shaped MoS2, attributed to dissimilar charge transfer with the underlying SiO2 substrate. Interestingly, the triangle shaped MoS2 single crystals exhibit distinct electrostatic and photoluminescence properties at center and edges. The underlying mechanism is proposed that partial decoupling of MoS2 at edges from SiO2 substrate induces different doping level and strain effects, resulting in anomalous physical properties at edges. The results reported here demonstrate that doping and strain effects induced by substrates have a significant influence on physical properties of monolayer triangle shaped MoS2,which can be generally applicable to other transition metal dichalcogenides materials.

  14. Effect of Mandibular Advancement Device Therapy on the Signs and Symptoms of Temporomandibular Disorders

    PubMed Central

    Raunio, Antti; Sipilä, Kirsi; Raustia, Aune

    2012-01-01

    ABSTRACT Objectives Mandibular advancement device therapy is effectively used in the treatment of obstructive sleep apnea, but also several side effects in the masticatory system have been reported. The aim of this study was to evaluate the subjective symptoms and clinical signs of temporomandibular disorders connected to mandibular advancement device therapy. Material and Methods The material consisted of 15 patients (9 men and 6 women, mean age 51.1 years, range 21 to 70 years) diagnosed with obstructive sleep apnea (OSA). Subjective symptoms and clinical temporomandibular disorders (TMD) signs were recorded at the beginning of the treatment (baseline) and at 1-month, 3-month, 6-month and 24-month follow-ups. The degree of TMD was assessed using the anamnestic (Ai) and the clinical dysfunction index (Di) of Helkimo. For assessing the effect of TMD the patients were divided in discontinuing and continuing groups. Results According to Ai and Di, the severity of TMD remained unchanged during the follow-up in most of the patients. Temporomandibular joint (TMJ) crepitation was found more frequently in discontinuing patients at all follow-ups. The difference was statistically significant (P < 0.05) at the six-month follow-up. Masticatory muscle pain during palpation was a frequent clinical sign at the baseline and during the follow-up period but the difference between discontinuing and continuing patients was not significant. Conclusions It seems that signs and symptoms of temporomandibular disorders do not necessarily increase during long-term mandibular advancement device therapy. However, it seems that patients with clinically assessed temporomandibular joint crepitation may discontinue their mandibular advancement device therapy due to temporomandibular disorders. PMID:24422023

  15. Aircrew Training Devices: Utility and Utilization of Advanced Instructional Features. Phase III. Electronic Warfare Trainers.

    DTIC Science & Technology

    1986-04-01

    Devices: Utility and Utilization of Advanced Instructional Features (Phase III- Electronic Warfare Trainers) 12 PERSONAL AUTHOR(S) Polzella . Donald J...Features, addressed a portion of this subthrust. Dr. Wayne Waag (AFHRL/OTU) was the Contract Monitor and Dr. Donald J. Polzella and Dr. David C. Hubbard...training is practicable (see Polzella , 1983, p.8). However, instructional features are expensive to implement, especially those features that require the

  16. Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

    NASA Astrophysics Data System (ADS)

    Guo, Junjie; Yang, Bingchu; Zheng, Zhouming; Jiang, Jie

    2017-03-01

    Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.

  17. Single-layer MoS2 electronics.

    PubMed

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  18. Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

    NASA Astrophysics Data System (ADS)

    Radauscher, Erich Justin

    Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing

  19. Reliability of Strength Testing using the Advanced Resistive Exercise Device and Free Weights

    NASA Technical Reports Server (NTRS)

    English, Kirk L.; Loehr, James A.; Laughlin, Mitzi A.; Lee, Stuart M. C.; Hagan, R. Donald

    2008-01-01

    The Advanced Resistive Exercise Device (ARED) was developed for use on the International Space Station as a countermeasure against muscle atrophy and decreased strength. This investigation examined the reliability of one-repetition maximum (1RM) strength testing using ARED and traditional free weight (FW) exercise. Methods: Six males (180.8 +/- 4.3 cm, 83.6 +/- 6.4 kg, 36 +/- 8 y, mean +/- SD) who had not engaged in resistive exercise for at least six months volunteered to participate in this project. Subjects completed four 1RM testing sessions each for FW and ARED (eight total sessions) using a balanced, randomized, crossover design. All testing using one device was completed before progressing to the other. During each session, 1RM was measured for the squat, heel raise, and deadlift exercises. Generalizability (G) and intraclass correlation coefficients (ICC) were calculated for each exercise on each device and were used to predict the number of sessions needed to obtain a reliable 1RM measurement (G . 0.90). Interclass reliability coefficients and Pearson's correlation coefficients (R) also were calculated for the highest 1RM value (1RM9sub peak)) obtained for each exercise on each device to quantify 1RM relationships between devices.

  20. Inversion layer MOS solar cells

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1986-01-01

    Inversion layer (IL) Metal Oxide Semiconductor (MOS) solar cells were fabricated. The fabrication technique and problems are discussed. A plan for modeling IL cells is presented. Future work in this area is addressed.

  1. Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

    NASA Astrophysics Data System (ADS)

    Island, Joshua O.; Steele, Gary A.; van der Zant, Herre S. J.; Castellanos-Gomez, Andres

    2016-09-01

    We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)—molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.

  2. Tuning the hysteresis voltage in 2D multilayer MoS2 FETs

    NASA Astrophysics Data System (ADS)

    Jiang, Jie; Zheng, Zhouming; Guo, Junjie

    2016-10-01

    The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS2 transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS2 FET. This simple method for tuning the hysteresis voltage of MoS2 FET can make a significant step toward 2D nanoelectronic device applications.

  3. [Research progress on the treatment of obstructive sleep apnea and hypopnea syndrome with mandibular advancement device].

    PubMed

    Li, De-hong; Yang, Xiang-hong; Guo, Tian-wen

    2010-04-01

    Obstructive sleep apnea and hypopnea syndrome (OSAHS) is characterized by obstruction of upper airway and respiratory disturbance, excessive daytime sleepiness and tiredness.The possible causes are obesity, hypertension, and upper airway malformations,etc. The location and degree of upper airway structure narrowing in patients have been investigated in many ways, such as X-ray, multi-slices spiral computed tomography, etc. With multi-planar reconstruction technique,3-dimensional construction of upper airway can be established which shows the delicate changes of the upper airway structure. Mandibular advancement device is known as an effective treatment on mild and moderate OSAHS. By advancing the mandible forward, it can increase the space of upper airway, especially the oropharyngeal space. This paper reviewed the methods of investigating on OSAHS and the change of upper airway structure in OSAHS patients treated with mandibular advancement device. Supported by Combined Research Fund of Bureau of Health, Yunan Province and Kunming Medical College(Grant No.2009CD205).

  4. MoS2‐Based Nanocomposites for Electrochemical Energy Storage

    PubMed Central

    Wang, Tianyi; Chen, Shuangqiang; Xue, Huaiguo

    2016-01-01

    Typical layered transition‐metal chalcogenide materials, in particular layered molybdenum disulfide (MoS2) nanocomposites, have attracted increasing attention in recent years due to their excellent chemical and physical properties in various research fieldsHere, a general overview of synthetic MoS2 based nanocomposites via different preparation approaches and their applications in energy storage devices (Li‐ion battery, Na‐ion battery, and supercapacitor) is presented. The relationship between morphologies and the electrochemical performances of MoS2‐based nanocomposites in the three typical and promising rechargeable systems is also discussed. Finally, perspectives on major challenges and opportunities faced by MoS2‐based materials to address the practical problems of MoS2‐based materials are presented. PMID:28251051

  5. Monolayer MoS2 self-switching diodes

    NASA Astrophysics Data System (ADS)

    Al-Dirini, Feras; Hossain, Faruque M.; Mohammed, Mahmood A.; Hossain, Md Sharafat; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2016-01-01

    This paper presents a new molybdenum disulphide (MoS2) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS2 monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS2 results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

  6. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study.

    PubMed

    Feng, Li-Ping; Su, Jie; Liu, Zheng-Tang

    2017-02-08

    Novel MoS2/(MX2)n lateral and (MoS2)/(MX2)n-BN hybrid heterostructures have been designed on monolayer MoS2 to extend its applications. The electronic, interfacial and optical properties of the lateral and hybrid heterostructures have been investigated comparatively using first-principles calculations. It was found that the charge distributions, band gaps, band levels, electrostatic potentials, and optical absorption of the MoS2/(MX2)n lateral heterostructures depend greatly on the width n of MX2, irrespective of the size of the lateral heterostructures. The CBM states of the MoS2/(MX2)n lateral heterostructures dominated by the dz(2) orbitals are localized around MoS2, whereas the VBM states of the MoS2/(MX2)n lateral heterostructures are dominated by the MX2 region. Through regulating the width n of the MX2 region in the MoS2/(MX2)n lateral heterostructures, the optical absorption of the lateral heterostructures under visible light can be increased, and the CBM and VBM states of the lateral heterostructures can be located above the hydrogen reduction potential and below the water oxidation potential, respectively. The similar characteristics were observed in the MoS2/(MX2)n-BN hybrid heterostructures, indicating that BN is a good substrate for the MoS2/(MX2)n lateral heterostructures. The analysis implies that forming the lateral and hybrid heterostructures is an effective way to extend the applications of monolayer MoS2 in photocatalytic water and photovoltaic devices.

  7. Descriptions of a linear device developed for research on advanced plasma imaging and dynamics.

    PubMed

    Chung, J; Lee, K D; Seo, D C; Nam, Y U; Ko, W H; Lee, J H; Choi, M C

    2009-10-01

    The research on advanced plasma imaging and dynamics (RAPID) device is a newly developed linear electron cyclotron resonance (ECR) plasma device. It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. A 6 kW 2.45 GHz magnetron is used to produce steady-state ECR plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). The cylindrical stainless steel vacuum chamber is 300 mm in diameter and 750 mm in length and has eight radial and ten axial ports including 6-in. and 8-in. viewing windows for heating and diagnostics. Experimental observation of ECR plasma heating has been recently carried out during the initial plasma operation. The main diagnostic systems including a 94 GHz heterodyne interferometer, a high-resolution 25 channel one-dimensional array spectrometer, a single channel survey spectrometer, and an electric probe have been also prepared. The RAPID device is a flexible simulator for the understanding of tokamak edge plasma physics and new diagnostic system development. In this work, we describe the RAPID device and initial operation results.

  8. Descriptions of a linear device developed for research on advanced plasma imaging and dynamics

    SciTech Connect

    Chung, J.; Lee, K. D.; Seo, D. C.; Nam, Y. U.; Ko, W. H.; Lee, J. H.; Choi, M. C.

    2009-10-15

    The research on advanced plasma imaging and dynamics (RAPID) device is a newly developed linear electron cyclotron resonance (ECR) plasma device. It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. A 6 kW 2.45 GHz magnetron is used to produce steady-state ECR plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). The cylindrical stainless steel vacuum chamber is 300 mm in diameter and 750 mm in length and has eight radial and ten axial ports including 6-in. and 8-in. viewing windows for heating and diagnostics. Experimental observation of ECR plasma heating has been recently carried out during the initial plasma operation. The main diagnostic systems including a 94 GHz heterodyne interferometer, a high-resolution 25 channel one-dimensional array spectrometer, a single channel survey spectrometer, and an electric probe have been also prepared. The RAPID device is a flexible simulator for the understanding of tokamak edge plasma physics and new diagnostic system development. In this work, we describe the RAPID device and initial operation results.

  9. Characterization of organic and inorganic optoelectronic semiconductor devices using advanced spectroscopic methods

    NASA Astrophysics Data System (ADS)

    Schroeder, Raoul

    In this thesis, advanced spectroscopy methods are discussed and applied to gain understanding of the physical properties of organic conjugated molecules, II-VI thin film semiconductors, and vertical cavity surface emitting lasers (VCSEL). Experiments include single photon and two-photon excitation with lasers, with subsequent measurements of the absorption and photoluminescence, as well as photocurrent measurements using tungsten and xenon lamps, measuring the direct current and the alternating current of the devices. The materials are investigated in dissolved form (conjugated polymers), thin films (polymers, II-VI semiconductors), and complex layer structures (hybrid device, VCSEL). The experiments are analyzed and interpreted by newly developed or applied theories for two-photon saturation processes in semiconductors, bandgap shrinkage due to optically induced electron hole pairs, and the principle of detailed balance to describe the photoluminescence in thin film cadmium sulfide.

  10. Centre for Advanced Microstructures and Devices (CAMD) at Louisiana State University

    NASA Astrophysics Data System (ADS)

    Stockbauer, Roger L.; Poliakoff, Erwin D.; Ajmera, Pratul; Craft, Ben C.; Saile, Volker

    1990-06-01

    The Centre for Advanced Microstructures and Devices (CAMD) has been established by the Department of Energy at Louisiana State University for the expressed purpose of developing X-ray lithography based techniques for manufacturing microcircuits. The heart of the Center will be a synchrotron light source optimized for the soft X-ray region and will be the first commercially manufactured electron storage ring in the United States. The magnet lattice is based on a design developed by Chasman and Green and will be similar to the VUV ring at Brookhaven NSLS and will operate at 1.2 GeV with a critical wavelength of 9.5 Å. Straight sections will allow up to three insertion devices to be installed for higher energy and higher intensity radiation. In addition to the lithography effort, experimental programs are being established in physics, chemistry, and related areas.

  11. A new synchrotron light source at Louisiana State University's Center for Advanced Microstructures and Devices

    NASA Astrophysics Data System (ADS)

    Stockbauer, Roger L.; Ajmera, Pratul; Poliakoff, Erwin D.; Craft, Ben C.; Saile, Volker

    1990-05-01

    A 1.2-GeV synchrotron light source is being constructed at the Center for Advanced Microstructures and Devices (CAMD) at Louisiana State University. The expressed purpose of the center, which has been funded by a grant from the US Department of Energy, is to develop X-ray lithography techniques for manufacturing microcircuits, although basic science programs are also being established. The storage ring will be optimized for the soft-X-ray region and will be the first commercially manufactured electron storage ring in the United States. The magnetic lattice is based on a design developed by Chasman and Green and will allow up to three insertion devices to be installed for higher-energy and higher-intensity radiation. In addition to the lithography effort, experimental programs are being established in physics, chemistry, and related areas.

  12. Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Fonteneau, Pascal; Solaro, Yohann; Legrand, Charles-Alex; Marin-Cudraz, David; Ferrari, Philippe; Cristoloveanu, Sorin

    2017-02-01

    A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated experimentally. Since the device has no front gate, the operation mechanism is controlled by two adjacent heavily doped buried ground planes acting as back-gates. Characteristics such as sharp quasi-vertical switching, low leakage, and tunable trigger voltage are measured and discussed. We explore several variants (thin and thick silicon or SiGe body) and show promising results in terms of high current, switching performance and ESD capability with relatively low back-gate and drain bias operation.

  13. Left ventricular assist device driveline infections: recent advances and future goals

    PubMed Central

    2015-01-01

    Left ventricular assist devices (LVADs) have revolutionized the treatment of advanced heart failure, but infection remains a substantial risk. LVAD driveline infections (DLIs) are the most common type of LVAD-associated infection (LVADI). In the past several years we have expanded our understanding of DLI epidemiology, standardized the definition of LVADIs, improved infection rates through changes in implantation techniques, and investigated potential new modalities for DLI diagnosis. However, significant challenges remain for optimizing DLI prevention and treatment. These challenges include standardizing and improving both empiric and targeted antimicrobial therapy, expanding our understanding of effective driveline exit site dressings and topical therapies, and defining the patient population that benefits from device exchange and transplant. Additionally, in an era of expanding antibiotic resistance we need to continue investigating novel, non-antibiotic therapies for prevention and treatment of DLIs. PMID:26793335

  14. Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Huihui; Gao, Feng; Dai, Mingjin; Jia, Dechang; Zhou, Yu; Hu, Pingan

    2017-03-01

    Two-dimensional (2D) layered materials, such as graphene, hexagonal boron nitride (h-BN), molybdenum disulfide (MoS{}2 ), have attracted tremendous interest due to their atom-thickness structures and excellent physical properties. h-BN has predominant advantages as the dielectric substrate in FET devices due to its outstanding properties such as chemically inert surface, being free of dangling bonds and surface charge traps, especially the large-band-gap insulativity. h-BN involved vertical heterostructures have been widely exploited during the past few years. Such heterostructures adopting h-BN as dielectric layers exhibit enhanced electronic performance, and provide further possibilities for device engineering. Besides, a series of intriguing physical phenomena are observed in certain vertical heterostructures, such as superlattice potential induced replication of Dirac points, band gap tuning, Hofstadter butterfly states, gate-dependent pseudospin mixing. Herein we focus on the rapid developments of h-BN synthesis and fabrication of vertical heterostructures devices based on h-BN, and review the novel properties as well as the potential applications of the heterostructures composed of h-BN. Project supported by the National Natural Science Foundation of China (Nos. 61390502, 21373068), the National Basic Research Program of China (No. 2013CB632900), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No. 51521003), and the Self-Planned Task of State Key Laboratory of Robotics and System (No. SKLRS201607B).

  15. Management of severe obstructive sleep apnea using mandibular advancement devices with auto continuous positive airway pressures

    PubMed Central

    Upadhyay, Rashmi; Dubey, Abhishek; Kant, Surya; Singh, Balendra Pratap

    2015-01-01

    The use of continuous positive airway pressures (CPAP) is considered standard treatment of moderate to severe obstructive sleep apnea (OSA). Treatment of the disease poses a great challenge not only for its diagnostic purpose but also for its treatment part. In about 29-83% of the patients, treatment is difficult because of non-compliance resulting due to high pressures, air leaks and other related issues. In such situations, alternative methods of treatment need to be looked for so as to ascertain better management. Mandibular advancement devices along with CPAP may show better treatment outcome in specific situations. PMID:25814802

  16. Development of the Vibration Isolation System for the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Niebuhr, Jason H.; Hagen, Richard A.

    2011-01-01

    This paper describes the development of the Vibration Isolation System for the Advanced Resistive Exercise Device from conceptual design to lessons learned. Maintaining a micro-g environment on the International Space Station requires that experiment racks and major vibration sources be isolated. The challenge in characterizing exercise loads and testing the system in the presence of gravity led to a decision to qualify the system by analysis. Available data suggests that the system is successful in attenuating loads, yet there has been a major component failure and several procedural issues during its 3 years of operational use.

  17. Computational Models of Exercise on the Advanced Resistance Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Newby, Nate; Caldwell, Erin; Scott-Pandorf, Melissa; Peters,Brian; Fincke, Renita; DeWitt, John; Poutz-Snyder, Lori

    2011-01-01

    Muscle and bone loss remain a concern for crew returning from space flight. The advanced resistance exercise device (ARED) is used for on-orbit resistance exercise to help mitigate these losses. However, characterization of how the ARED loads the body in microgravity has yet to be determined. Computational models allow us to analyze ARED exercise in both 1G and 0G environments. To this end, biomechanical models of the squat, single-leg squat, and deadlift exercise on the ARED have been developed to further investigate bone and muscle forces resulting from the exercises.

  18. [Objective surgery -- advanced robotic devices and simulators used for surgical skill assessment].

    PubMed

    Suhánszki, Norbert; Haidegger, Tamás

    2014-12-01

    Robotic assistance became a leading trend in minimally invasive surgery, which is based on the global success of laparoscopic surgery. Manual laparoscopy requires advanced skills and capabilities, which is acquired through tedious learning procedure, while da Vinci type surgical systems offer intuitive control and advanced ergonomics. Nevertheless, in either case, the key issue is to be able to assess objectively the surgeons' skills and capabilities. Robotic devices offer radically new way to collect data during surgical procedures, opening the space for new ways of skill parameterization. This may be revolutionary in MIS training, given the new and objective surgical curriculum and examination methods. The article reviews currently developed skill assessment techniques for robotic surgery and simulators, thoroughly inspecting their validation procedure and utility. In the coming years, these methods will become the mainstream of Western surgical education.

  19. Effect of MoO3 constituents on the growth of MoS2 nanosheets by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xuan; Zhang, Yong Ping; Qian Chen, Zhi

    2016-06-01

    The highly crystalline and uniform MoS2 film was grown on Si substrate by a low-pressure chemical vapor deposition method using S and MoO3 as precursors at an elevated temperature. The structures and properties of MoS2 nanosheets vary greatly with the content of MoO3 constituents in the films. The nanostructured MoS2 film exhibits strong photoluminescence in the visible range. This work may provide a pathway to synthesizing MoS2 nanosheets and facilitate the development of applicable devices.

  20. Red-Shift Effect and Sensitive Responsivity of MoS2/ZnO Flexible Photodetectors.

    PubMed

    Hsiao, Yu-Jen; Fang, Te-Hua; Ji, Liang-Wen; Yang, Bo-Yi

    2015-12-01

    The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively. The responsivity of MoS2/ZnO increased, and the wavelength was red-shifted.

  1. Controllable growth and electrostatic properties of Bernal stacked bilayer MoS2

    NASA Astrophysics Data System (ADS)

    Hao, Song; Yang, Bingchu; Gao, Yongli

    2016-09-01

    Compared with the most studied monolayer MoS2, bilayer MoS2 possesses many distinct fascinating physical properties and potential applications owing to interlayer interactions and structural symmetry. Here, bilayer MoS2 domains with strict identical AB Bernal stacked order were controllably synthesized using chemical vapor deposition method. In addition, the electrostatic properties of bilayer MoS2 were systematically investigated by multiple means of photoemission electron microscopy, electrostatic force microscopy, and kelvin probe force microscopy. We found that the work function of monolayer MoS2 is homogeneous across single crystals and polycrystalline films except for grain boundaries. However, the work function of the Bernal stacked bilayer MoS2 decreases by 50 ± 4 meV compared with that of monolayer MoS2 due to the interlayer coupling and screening effects. The deeper understanding gained here on the electrostatic properties of the AB Bernal stacked bilayer MoS2 should help in the creation of next-generation electronic and optoelectronic devices.

  2. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGES

    Liu, Zheng; Amani, Matin; Najmaei, Sina; ...

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  3. Measurement of the Radiation Incident on NbFeB Insertion Devices at the Advanced Light Source

    NASA Astrophysics Data System (ADS)

    Krebs, Gary; Holmes, Michael

    1997-05-01

    The Lawrence Berkeley National Laboratories Advanced Light Source is a third generation light source containing NdFeB permanent magnet insertion devices.The lifetime of the permanent magnets in a radiation environment is of paramount importance. Measurements of the radiation incident on the insertion device magnets under various operating conditions are presented.

  4. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.

    PubMed

    Baek, Seung Hyun; Choi, Yura; Choi, Woong

    2015-12-01

    We report the largest-size thin films of uniform single-layer MoS2 on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO3 and S evaporated from solid sources. The as-grown thin films of single-layer MoS2 were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS2 clusters. Compared to mechanically exfoliated crystals, the as-grown single-layer MoS2 thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. These results demonstrate that it is possible to scale up the growth of uniform single-layer MoS2 thin films, providing potentially important implications on realizing high-performance MoS2 devices.

  5. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

    PubMed Central

    Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing

    2016-01-01

    Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency. PMID:26928583

  6. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.

    PubMed

    Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing

    2016-03-01

    Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

  7. Stabilizing MoS2 Nanosheets through SnO2 Nanocrystal Decoration for High-Performance Gas Sensing in Air.

    PubMed

    Cui, Shumao; Wen, Zhenhai; Huang, Xingkang; Chang, Jingbo; Chen, Junhong

    2015-05-20

    The unique properties of MoS(2) nanosheets make them a promising candidate for high-performance room temperature sensing. However, the properties of pristine MoS(2) nanosheets are strongly influenced by the significant adsorption of oxygen in an air environment, which leads to instability of the MoS(2) sensing device, and all sensing results on MoS(2) reported to date were exclusively obtained in an inert atmosphere. This significantly limits the practical sensor application of MoS(2) in an air environment. Herein, a novel nanohybrid of SnO(2) nanocrystal (NC)-decorated crumpled MoS(2) nanosheet (MoS(2)/SnO(2)) and its exciting air-stable property for room temperature sensing of NO(2) are reported. Interestingly, the SnO(2) NCs serve as strong p-type dopants for MoS(2), leading to p-type channels in the MoS(2) nanosheets. The SnO(2) NCs also significantly enhance the stability of MoS(2) nanosheets in dry air. As a result, unlike other MoS(2) sensors operated in an inert gas (e.g. N(2)), the nanohybrids exhibit high sensitivity, excellent selectivity, and repeatability to NO(2) under a practical dry air environment. This work suggests that NC decoration significantly tunes the properties of MoS(2) nanosheets for various applications.

  8. Layer-by-layer self-assembly of polyelectrolyte functionalized MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Shen, Jianfeng; Pei, Yu; Dong, Pei; Ji, Jin; Cui, Zheng; Yuan, Junhua; Baines, Robert; Ajayan, Pulickel M.; Ye, Mingxin

    2016-05-01

    Few-layered polyelectrolyte functionalized MoS2 nanosheets were obtained for the first time through in situ polymerization of MoS2 nanosheets with poly(acrylic acid) and poly(acrylamide), both of which demonstrated excellent dispersibility and stability in water. After designing and optimizing the components of this series of polyelectrolyte functionalized MoS2 nanosheets, by exploiting the electrostatic interactions present in the modified MoS2 nanosheets, we further created a series of layer-by-layer (LBL) self-assembling MoS2-based films. To this end, uniform MoS2 nanosheet-based LBL films were precisely deposited on substrates such as quartz, silicon, and ITO. The polyelectrolyte functionalized MoS2 nanosheet assembled LBL film-modified electrodes demonstrated enhanced electrocatalytic activity for H2O2. As such, they are conducive to efficient sensors and advanced biosensing systems.Few-layered polyelectrolyte functionalized MoS2 nanosheets were obtained for the first time through in situ polymerization of MoS2 nanosheets with poly(acrylic acid) and poly(acrylamide), both of which demonstrated excellent dispersibility and stability in water. After designing and optimizing the components of this series of polyelectrolyte functionalized MoS2 nanosheets, by exploiting the electrostatic interactions present in the modified MoS2 nanosheets, we further created a series of layer-by-layer (LBL) self-assembling MoS2-based films. To this end, uniform MoS2 nanosheet-based LBL films were precisely deposited on substrates such as quartz, silicon, and ITO. The polyelectrolyte functionalized MoS2 nanosheet assembled LBL film-modified electrodes demonstrated enhanced electrocatalytic activity for H2O2. As such, they are conducive to efficient sensors and advanced biosensing systems. Electronic supplementary information (ESI) available: SEM, AFM and TEM characterization of PAA-MoS2 and PAM-MoS2 nanocomposites. More characterization and electrochemical properties of LBL films

  9. Single-layer MoS2 transistors.

    PubMed

    Radisavljevic, B; Radenovic, A; Brivio, J; Giacometti, V; Kis, A

    2011-03-01

    Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

  10. Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

    NASA Astrophysics Data System (ADS)

    Sukharev, V.; Kteyan, A.; Choy, J.-H.; Hovsepyan, H.; Markosian, A.; Zschech, E.; Huebner, R.

    2011-11-01

    Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D through-silicon-via (TSV) based technologies are outlined. The paper addresses the growing need in a simulation-based design verification flow capable to analyze a design of 3D IC stacks and to determine across-die out-of-spec variations in device electrical characteristics caused by the layout and through-silicon-via (TSV)/package-induced mechanical stress. The limited characterization/measurement capabilities for 3D IC stacks and a strict "good die" requirement make this type of analysis critical for the achievement of an acceptable level of functional and parametric yield and reliability. The paper focuses on the development of a design-for-manufacturability (DFM) type of methodology for managing mechanical stresses during a sequence of designs of 3D TSV-based dies, stacks and packages. A set of physics-based compact models for a multi-scale simulation to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D TSV technology is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics of the test-chip devices is presented. A strategy for generation of a simulation feeding data and respective materials characterization approach are proposed, with the goal to generate a database for multi-scale material parameters of wafer-level and package-level structures. For model validation, high-resolution strain measurements in Si channels of the test-chip devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm strain measurements so far.

  11. Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices

    NASA Astrophysics Data System (ADS)

    Baoping, He; Zujun, Wang; Jiangkun, Sheng; Shaoyan, Huang

    2016-12-01

    In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are examined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad (Si)/s. The investigation's results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation structure is the main total dose problem. The total ionizing dose (TID) radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is established. The I - V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I - V characteristics of 180 nm commercial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device. Project supported by the National Natural Science Foundation of China (No. 11305126).

  12. Advances in Resistive Pulse Sensors: Devices bridging the void between molecular and microscopic detection

    PubMed Central

    Kozak, Darby; Anderson, Will; Vogel, Robert; Trau, Matt

    2011-01-01

    Since the first reported use of a biological ion channel to detect differences in single stranded genomic base pairs in 1996, a renaissance in nanoscale resistive pulse sensors has ensued. This resurgence of a technique originally outlined and commercialized over fifty years ago has largely been driven by advances in nanoscaled fabrication, and ultimately, the prospect of a rapid and inexpensive means for genomic sequencing as well as other macromolecular characterization. In this pursuit, the potential application of these devices to characterize additional properties such as the size, shape, charge, and concentration of nanoscaled materials (10 – 900 nm) has been largely overlooked. Advances in nanotechnology and biotechnology are driving the need for simple yet sensitive individual object readout devices such as resistive pulse sensors. This review will examine the recent progress in pore-based sensing in the nanoscale range. A detailed analysis of three new types of pore sensors – in-series, parallel, and size-tunable pores – has been included. These pores offer improved measurement sensitivity over a wider particle size range. The fundamental physical chemistry of these techniques, which is still evolving, will be reviewed. PMID:22034585

  13. Evaluation of ExPress glaucoma filtration device in Indian patients with advanced glaucoma.

    PubMed

    Angmo, Dewang; Sharma, Reetika; Temkar, Shreyas; Dada, Tanuj

    2015-05-01

    ExPress glaucoma filtration device (GFD) has recently become available in India as a surgical option for glaucoma patients. We retrospectively evaluated the outcome of ExPress GFD in 12 eyes with advanced glaucoma with intraocular pressures (IOPs) not controlled on maximal tolerable medical therapy. The mean preoperative IOP of 29.58 ± 7.13 mmHg decreased to 17.0 ± 2.67 and 17.40 ± 0.89 mmHg at 6 and 12 months after surgery. Absolute success (IOP ≤ 18 mmHg, with no additional glaucoma medications) was achieved in eight cases (66.7%) and qualified success (IOP ≤ 18 mmHg, with additional glaucoma medications) in two cases (16.7%) at 1-year after surgery. Early intervention was needed in 4 patients; two underwent anterior chamber reformation while the other two required needling. Two patients required resurgery. There was no significant change in the best corrected visual acuity postoperatively (P = 0.37). ExPress GFD does not seem to offer a benefit over standard trabeculectomy in patients with advanced glaucomatous disease in terms of IOP control or complication rate. However, due to the small sample size with a heterogeneous mixture of primary and secondary glaucoma's, we await further studies with a larger sample size and long-term follow-up, to see how the device performs.

  14. Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition.

    PubMed

    Liu, Lei; Huang, Yazhou; Sha, Jingjie; Chen, Yunfei

    2017-03-21

    Monolayer and/or atomically thin transition metal dichalcogenides cover a wide range of two-dimensional (2-D) materials, whose fascinating semiconducting and optical properties have made them being promising candidate materials for optoelectronic device. Controllable growth of these materials is critical for their device applications. By using MoCl5 and H2S as precursors, monolayer and ultrathin molybdenum disulfide (MoS2) films with controlled lamellar structure have been directly built layer by layer on SiO2 substrates without followed high-temperature annealing. Furthermore, the thickness of MoS2 films can be precisely regulated by applying different ALD cycles. Once an ALD cycle is applied, one molecular layer of MoS2 material will be "added" on substrate or original existing MoS2 films. At the initial stage (1 to 3 ALD cycles), the density of MoS2 materials increases with ALD cycle increasing, while large area of continuous MoS2 film on the substrate can be obtained when 4 or more ALD cycles are applied. By this way, excellent triangular crystal of MoS2 with controlled atomic size in thickness and highly oriented hexagonal crystal structure can be obtained by applying definite ALD cycles.

  15. Effect of precursor on growth and morphology of MoS2 monolayer and multilayer

    NASA Astrophysics Data System (ADS)

    Ganorkar, Shraddha; Kim, Jungyoon; Kim, Young-Hwan; Kim, Seong-II

    2015-12-01

    The rise of two-dimensional (2D) material is one of the results of successful efforts of researchers which laid the path to the new era of electronics. One of the most exciting materials is MoS2. Synthesis has been always a major issue as electronic devices need reproducibility along with similar properties for mass productions. Chemical vapor deposition (CVD) is one of the successful methods for 2D materials including graphene. Furthermore, the choice of starting materials for Mo and S source is crucial. The different source has different effects on the layers and morphology of MoS2 films. In this work, we have extensively studied the CVD technique to grow few layers of MoS2 with two precursors MoO3 and MoCl5, show remarkable changes. The MoO3 source gives a triangular shaped MoS2 monolayer while that of MoCl5 can achieve uniform MoS2 without triangle. The absence of geometric shapes with MoCl5 is poorly understood. We tried to explain with MoCl5 precursor, the formation of continuous monolayer of MoS2 without any triangle on the basis of chemical reaction formalism mostly due to one step reaction process and formation of MoS2 from gas phase to the solid phase. The film synthesized by MoCl5 is more continuous and it would be a good choice for device applications.

  16. The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates.

    PubMed

    Yan, Zhequan; Chen, Liang; Yoon, Mina; Kumar, Satish

    2016-12-07

    We investigate the role of interfacial electronic properties on the phonon transport in two-dimensional MoS2 adsorbed on metal substrates (Au and Sc) using first-principles density functional theory and the atomistic Green's function method. Our study reveals that the different degree of orbital hybridization and electronic charge distribution between MoS2 and metal substrates play a significant role in determining the overall phonon-phonon coupling and phonon transmission. The charge transfer caused by the adsorption of MoS2 on Sc substrate can significantly weaken the Mo-S bond strength and change the phonon properties of MoS2, which result in a significant change in thermal boundary conductance (TBC) from one lattice-stacking configuration to another for same metallic substrate. In a lattice-stacking configuration of MoS2/Sc, weakening of the Mo-S bond strength due to charge redistribution results in decrease in the force constant between Mo and S atoms and substantial redistribution of phonon density of states to low-frequency region which affects overall phonon transmission leading to 60% decrease in TBC compared to another configuration of MoS2/Sc. Strong chemical coupling between MoS2 and the Sc substrate leads to a significantly (∼19 times) higher TBC than that of the weakly bound MoS2/Au system. Our findings demonstrate the inherent connection among the interfacial electronic structure, the phonon distribution, and TBC, which helps us understand the mechanism of phonon transport at the MoS2/metal interfaces. The results provide insights for the future design of MoS2-based electronics and a way of enhancing heat dissipation at the interfaces of MoS2-based nanoelectronic devices.

  17. Towards the Intrinsic Limit in As-Exfoliated MoS2

    NASA Astrophysics Data System (ADS)

    Sutton, Erin; George, Edward; Whapham, Emily; Burch, Kenneth; Burch Group Team

    In recent years, two-dimensional transition metal dichalcogenide (TMDC) semiconductors have been intensively studied as exciting non-zero band gap analogs to graphene. For example, molybdenum disulfide (MoS2), a TMDC, is a van der Waals material which can be thinned down to single atomic layers less than a nanometer thick via micro-mechanical cleavage. In this regime, quantum confinement effects give rise to properties not seen in the bulk crystal. The attractive properties of ultrathin MoS2 have inspired myriad applications, including spin- and valley-tronics, and LED and photo-detecting devices. As the performance of these devices is optimized, a method of modulating these properties is strongly desired. Through exfoliating MoS2 on various substrates in an inert glovebox environment, we have produced as-exfoliated MoS2 doped at the intrinsic level. We study the changes in the MoS2 via Raman and photoluminescence spectra and see shifts in excitonic behavior. The ability to create intrinsic MoS2 without the need for chemical doping or gating has exciting implications for optical studies of the material in addition to device applications such as photovoltaic, photocatalytic, and LED devices.

  18. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE PAGES

    Xia, Ming; Li, Bo; Yin, Kuibo; ...

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  19. Stability and Electronic properties of Ultra-thin Metallic nanowires on MoS2 monolayer

    NASA Astrophysics Data System (ADS)

    Kumar, Ashok; Zhong, Xiaoliang; Gupta, Sanjeev K.; Ahluwalia, P. K.; Karna, Shashi P.; Pandey, Ravindra

    2014-03-01

    MoS2 has emerged as a promising 2D nanomaterial for several technological applications. It has recently been shown that the highly capacitive Au nanoparticles raised the effective gate voltage for the MoS2 based device by an order of magnitude (Nano Lett. 13, 4434-41, 2013). In this talk, we examine stability and electronic properties of commensurable ultra-thin noble-metal nanowires (Cu, Ag, Au, Pt) on MoS2 monolayer. Results based on density functional theory will be presented to determine the preferred configuration for nanowires on the monolayer together with the enhancement in the conductivity of the composite system considered.

  20. Recent advances in computational methodology for simulation of mechanical circulatory assist devices

    PubMed Central

    Marsden, Alison L.; Bazilevs, Yuri; Long, Christopher C.; Behr, Marek

    2014-01-01

    Ventricular assist devices (VADs) provide mechanical circulatory support to offload the work of one or both ventricles during heart failure. They are used in the clinical setting as destination therapy, as bridge to transplant, or more recently as bridge to recovery to allow for myocardial remodeling. Recent developments in computational simulation allow for detailed assessment of VAD hemodynamics for device design and optimization for both children and adults. Here, we provide a focused review of the recent literature on finite element methods and optimization for VAD simulations. As VAD designs typically fall into two categories, pulsatile and continuous flow devices, we separately address computational challenges of both types of designs, and the interaction with the circulatory system with three representative case studies. In particular, we focus on recent advancements in finite element methodology that has increased the fidelity of VAD simulations. We outline key challenges, which extend to the incorporation of biological response such as thrombosis and hemolysis, as well as shape optimization methods and challenges in computational methodology. PMID:24449607

  1. Mechanism Development, Testing, and Lessons Learned for the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Lamoreaux, Christopher D.; Landeck, Mark E.

    2006-01-01

    The Advanced Resistive Exercise Device (ARED) has been developed at NASA Johnson Space Center, for the International Space Station (ISS) program. ARED is a multi-exercise, high-load resistive exercise device, designed for long duration, human space missions. ARED will enable astronauts to effectively maintain their muscle strength and bone mass in the micro-gravity environment more effectively than any other existing devices. ARED's resistance is provided via two, 20.3 cm (8 in) diameter vacuum cylinders, which provide a nearly constant resistance source. ARED also has a means to simulate the inertia that is felt during a 1-G exercise routine via the flywheel subassembly, which is directly tied to the motion of the ARED cylinders. ARED is scheduled to fly on flight ULF 2 to the ISS and will be located in Node 1. Presently, ARED is in the middle of its qualification and acceptance test program. An extensive testing program and engineering evaluation has increased the reliability of ARED by bringing potential design issues to light before flight production. Some of those design issues, resolutions, and design details will be discussed in this paper.

  2. Improving the electrical performance of MoS2 by mild oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Nan, Haiyan; Wu, Zhangting; Jiang, Jie; Zafar, Amina; You, Yumeng; Ni, Zhenhua

    2017-04-01

    Two-dimensional (2D) molybdenum disulfide (MoS2) is considered as a promising candidate for electronic and optoelectronic devices. However, structural defects in MoS2 are widely reported and can greatly degrade its electrical and optical properties. In this work, we investigate the structural defects in MoS2 by low temperature photoluminescence (PL) spectroscopy and study their effects on the electrical performance, i.e. carrier mobility. We also adopt the mild oxygen plasma treatment to repair the structural defects and found that the carrier mobility of monolayer MoS2 can be greatly improved. This work would therefore offer a practical route to improve the performance of 2D dichalcogenide-based electrical and optoelectronic devices.

  3. WE-DE-207A-03: Recent Advances in Devices Used in Neuro--Interventions.

    PubMed

    Gounis, M

    2016-06-01

    1. Parallels in the evolution of x-ray angiographic systems and devices used for minimally invasive endovascular therapy Charles Strother - DSA, invented by Dr. Charles Mistretta at UW-Madison, was the technology which enabled the development of minimally invasive endovascular procedures. As DSA became widely available and the potential benefits for accessing the cerebral vasculature from an endovascular approach began to be apparent, industry began efforts to develop tools for use in these procedures. Along with development of catheters, embolic materials, pushable coils and the GDC coils there was simultaneous development and improvement of 2D DSA image quality and the introduction of 3D DSA. Together, these advances resulted in an enormous expansion in the scope and numbers of minimally invasive endovascular procedures. The introduction of flat detectors for c-arm angiographic systems in 2002 provided the possibility of the angiographic suite becoming not just a location for vascular imaging where physiological assessments might also be performed. Over the last decade algorithmic and hardware advances have been sufficient to now realize this potential in clinical practice. The selection of patients for endovascular treatments is enhanced by this dual capability. Along with these advances has been a steady reduction in the radiation exposure required so that today, vascular and soft tissue images may be obtained with equal or in many cases less radiation exposure than is the case for comparable images obtained with multi-detector CT.

  4. Development of a High Fidelity Dynamic Module of the Advanced Resistive Exercise Device (ARED) Using Adams

    NASA Technical Reports Server (NTRS)

    Humphreys, B. T.; Thompson, W. K.; Lewandowski, B. E.; Cadwell, E. E.; Newby, N. J.; Fincke, R. S.; Sheehan, C.; Mulugeta, L.

    2012-01-01

    NASA's Digital Astronaut Project (DAP) implements well-vetted computational models to predict and assess spaceflight health and performance risks, and enhance countermeasure development. DAP provides expertise and computation tools to its research customers for model development, integration, or analysis. DAP is currently supporting the NASA Exercise Physiology and Countermeasures (ExPC) project by integrating their biomechanical models of specific exercise movements with dynamic models of the devices on which the exercises were performed. This presentation focuses on the development of a high fidelity dynamic module of the Advanced Resistive Exercise Device (ARED) on board the ISS. The ARED module, illustrated in the figure below, was developed using the Adams (MSC Santa Ana, California) simulation package. The Adams package provides the capabilities to perform multi rigid body, flexible body, and mixed dynamic analyses of complex mechanisms. These capabilities were applied to accurately simulate: Inertial and mass properties of the device such as the vibration isolation system (VIS) effects and other ARED components, Non-linear joint friction effects, The gas law dynamics of the vacuum cylinders and VIS components using custom written differential state equations, The ARED flywheel dynamics, including torque limiting clutch. Design data from the JSC ARED Engineering team was utilized in developing the model. This included solid modeling geometry files, component/system specifications, engineering reports and available data sets. The Adams ARED module is importable into LifeMOD (Life Modeler, Inc., San Clemente, CA) for biomechanical analyses of different resistive exercises such as squat and dead-lift. Using motion capture data from ground test subjects, the ExPC developed biomechanical exercise models in LifeMOD. The Adams ARED device module was then integrated with the exercise subject model into one integrated dynamic model. This presentation will describe the

  5. Laser-Induced Particle Adsorption on Atomically Thin MoS2.

    PubMed

    Tran Khac, Bien Cuong; Jeon, Ki-Joon; Choi, Seung Tae; Kim, Yong Soo; DelRio, Frank W; Chung, Koo-Hyun

    2016-02-10

    Atomically thin molybdenum disulfide (MoS2) shows great potential for use in nanodevices because of its remarkable electronic, optoelectronic, and mechanical properties. These material properties are often dependent on the thickness or the number of layers, and hence Raman spectroscopy is widely used to characterize the thickness of atomically thin MoS2 due to the sensitivity of the vibrational spectrum to thickness. However, the lasers used in Raman spectroscopy can increase the local surface temperature and eventually damage the upper layers of the MoS2, thereby changing the aforementioned material properties. In this work, the effects of lasers on the topography and material properties of atomically thin MoS2 were systematically investigated using Raman spectroscopy and atomic force microscopy. In detail, friction force microscopy was used to study the friction characteristics of atomically thin MoS2 as a function of laser powers from 0.5 to 20 mW and number of layers from 1 to 3. It was found that particles formed on the top surface of the atomically thin MoS2 due to laser-induced thermal effects. The degree of particle formation increased as the laser power increased, prior to the thinning of the atomically thin MoS2. In addition, the degree of particle formation increased as the number of MoS2 layers increased, which suggests that the thermal behavior of the supported MoS2 may differ depending on the number of layers. The particles likely originated from the atmosphere due to laser-induced heating, but could be eliminated via appropriate laser powers and exposure times, which were determined experimentally. The outcomes of this work indicate that thermal management is crucial in the design of reliable nanoscale devices based on atomically thin MoS2.

  6. Advanced Algorithms and Statistics for MOS Surveys

    NASA Astrophysics Data System (ADS)

    Bolton, A. S.

    2016-10-01

    This paper presents an individual view on the current state of computational data processing and statistics for inference and discovery in multi-object spectroscopic surveys, supplemented by a historical perspective and a few present-day applications. It is more op-ed than review, and hopefully more readable as a result.

  7. MoS2 Heterojunctions by Thickness Modulation

    DOE PAGES

    Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; ...

    2015-06-30

    In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignment andmore » photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.« less

  8. Analysis of insertion device magnet measurements for the Advanced Light Source

    SciTech Connect

    Marks, S.; Humphries, D.; Kincaid, B.M.; Schlueter, R.; Wang, C.

    1993-07-01

    The Advanced Light Source (ALS), which is currently being commissioned at Lawrence Berkeley Laboratory, is a third generation light source designed to produce XUV radiation of unprecedented brightness. To meet the high brightness goal the storage ring has been designed for very small electron beam emittance and the undulators installed in the ALS are built to a high degree of precision. The allowable magnetic field errors are driven by electron beam and radiation requirements. Detailed magnetic measurements and adjustments are performed on each undulator to qualify it for installation in the ALS. The first two ALS undulators, IDA and IDB, have been installed. This paper describes the program of measurements, data analysis, and adjustments carried out for these two devices. Calculations of the radiation spectrum, based upon magnetic measurements, are included. Final field integral distributions are also shown. Good field integral uniformity has been achieved using a novel correction scheme, which is also described.

  9. Analysis of insertion device magnet measurements for the advanced light source

    NASA Astrophysics Data System (ADS)

    Marks, Steve; Humphries, David E.; Kincaid, Brian M.; Schlueter, Ross D.; Wang, Chunxi

    1993-11-01

    The Advanced Light Source (ALS), which is currently being commissioned at Lawrence Berkeley Laboratory, is a third generation light source designed to produce XUV radiation of unprecedented brightness. To meet the high brightness goal the storage ring has been designed for very small electron beam emittance and the undulators installed in the ALS are built to a high degree of precision. The allowable magnetic field errors are driven by electron beam and radiation requirements. Detailed magnetic measurements and adjustments are performed on each undulator to qualify it for installation in the ALS. The first two ALS undulators, IDA and IDB, have been installed. This paper describes the program of measurements, data analysis, and adjustments carried out for these two devices. Calculations of the radiation spectrum, based upon magnetic measurements, are included. Final field integral distributions are also shown. Good field integral uniformity has been achieved using a novel correction scheme, which is also described.

  10. Advance ultra sensitive multi-layered nano plasmonic devices for label free biosensing targeting immunodiagnostics

    NASA Astrophysics Data System (ADS)

    Sharma, Divya; Dwivedi, R. P.

    2016-09-01

    The rapid advancement in technology has envisaged and drafted the use of optical bio-sensing units into label free and multiplexed bio-sensing, exploring the surface plasmon polaritons, which has turned into a gold standard on the commercial basis, but they are bulky and find difficulty in scaling up for the throughput detection. The integration of plasmonic crystals with microfluidics on the bio-sensing frontier offers a multi-level validation of results with the ease of real-time detection and imaging and holds a great promise to develop ultra-sensitive, fast, portable device for the point-of-care diagnostics. The paper describes the fast, low cost approach of designing and simulating label free biosensor using open source MEEP and other software tools targeting Immunodiagnostics.

  11. The role of MoS2 as an interfacial layer in graphene/silicon solar cells.

    PubMed

    Jiao, Kejia; Duan, Chunyang; Wu, Xiaofeng; Chen, Jiayuan; Wang, Yu; Chen, Yunfa

    2015-03-28

    The role of MoS2 as an effective interfacial layer in graphene/silicon solar cells is systematically investigated by varying MoS2 film annealing temperature and thickness. It is found that the power conversion efficiency (PCE) is increased by ∼100% from ∼2.3% to ∼4.4% with 80 °C annealed MoS2 film whereas it drops significantly to ∼0.6% with 200 °C annealed MoS2 film. The results are well explained based on the device energy band diagram. That is, the incorporation of MoS2(80) films leads to the formation of type II structure, facilitating hole transport; while valence band mismatch is formed with MoS2(200) films due to the increase in the work function of MoS2. Besides, the PCE increases gradually with decreasing MoS2 film thickness, and "saturates" at about 2 nm. The PCE can be further enhanced to ∼6.6% with the aid of silicon surface passivation. Our work demonstrates that MoS2 is an excellent interfacial layer to improve the PCE with low-temperature annealing (80 °C in air), which may be helpful in developing efficient and low-cost G/Si solar cells.

  12. Compliant substrate epitaxy: Au on MoS2

    NASA Astrophysics Data System (ADS)

    Zhou, Yuzhi; Kiriya, Daisuke; Haller, E. E.; Ager, Joel W.; Javey, Ali; Chrzan, D. C.

    2016-02-01

    A theory for the epitaxial growth of Au on MoS2 is developed and analyzed. The theory combines continuum linear elasticity theory with density functional theory to analyze epitaxial growth in this system. It is demonstrated that if one accounts for interfacial energies and strains, the presence of misfit dislocations, and the compliance of the MoS2 substrate, the experimentally observed growth orientation is favored despite the fact that it represents a larger elastic mismatch than two competing structures. The stability of the experimentally preferred orientation is attributed to the formation of a large number of strong Au-S bonds, and it is noted that this strong bond may serve as a means to exfoliate and transfer large single layers sheets of MoS2, as well as to engineer strain within single layers of MoS2. The potential for using a van der Waals-bonded layered material as a compliant substrate for applications in 2D electronic devices and epitaxial thin film growth is discussed.

  13. Extraordinary attributes of 2-dimensional MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Rao, C. N. R.; Maitra, Urmimala; Waghmare, Umesh V.

    2014-08-01

    The discovery of the amazing properties of graphene has stimulated exploration of single- and few-layer structures of layered inorganic materials. Of all the inorganic 2D nanosheet structures, those of MoS2 have attracted great attention because of their novel properties such as the presence of a direct bandgap, good field-effect transistor characteristics, large spin-orbit splitting, intense photoluminescence, catalytic properties, magnetism, superconductivity, ferroelectricity and several other properties with potential applications in electronics, optoelectronics, energy devices and spintronics. MoS2 nanosheets have been used in lithium batteries, supercapacitors and to generate hydrogen. Highlights of the impressive properties of MoS2 nanosheets, along with their structural and spectroscopic features are presented in this Letter. MoS2 typifies the family of metal dichalcogenides such as MoSe2 and WS2 and there is much to be done on nanosheets of these materials. Linus Pauling would have been pleased to see how molybdenite whose structure he studied in 1923 has become so important today.

  14. Tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication

    NASA Astrophysics Data System (ADS)

    Liu, L.; Shams, M. I. B.; Jiang, Z.; Rahman, S.; Hesler, J. L.; Cheng, L.-J.; Fay, P.

    2016-09-01

    In this paper, we report on two different approaches that have been explored to realize tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication. The first approach makes use of electronically tunable varactor diodes. Frequency tunable THz antennas based on this approach have been successfully demonstrated for the first time in G-band, enabling the development of spectroscopic THz detectors and focal-plane imaging arrays. The second approach takes advantages of optical THz spatial modulation based on photo-induced free carriers in semiconductors. Using this approach, high-performance tunable THz modulators/attenuators, reconfigurable masks for THz coded aperture imaging, and photo-induced Fresnel-zone-plate antennas for dynamic THz beam steering and forming have been successfully demonstrated. Our recent study also shows that by employing the so-called mesa array technique, sub-wavelength spatial resolution and higher than 100 dB modulation depth can be achieved, making it possible to develop tunable THz devices (e.g., tunable filters) with performance and versatility far beyond those realized by conventional approaches. On the basis of the above investigation, the prospects of high-speed near-field THz imaging, real-time ultra-sensitive heterodyne imaging and prototype adaptive THz wireless communication links will be discussed.

  15. Advances in Ch-LCD devices using plastic substrates with conducting polymer

    NASA Astrophysics Data System (ADS)

    Fritz, William J.; Wonderly, H.; Smith, Steven W.; Kim, Yoan; Chonko, Jason; Doane, J. William; Shashidhar, Ranganathan; O'Ferrall, Catherine E.; Cuttino, David S.

    1999-03-01

    Cholesteric liquid crystal display (Ch-LCD) are lightweight, low power, sunlight readable displays. In addition, they can serve a dual function as pen-input device switch no additional hardware. Because of the unique properties of this technology, Ch-LCDs can be made with plastic substrates thus making the displayed extremely lightweight, compact and unbreakable. We discuss in this paper cent advances in merging Ch-LCD technology with conducting polymer electrodes. Conducting polymer provides potential benefits over the use of the standard display electrode materials, indium tin oxide, by improving the reliability of the display. Furthermore, the potential to print the conducting polymer electrodes could significantly increase manufacturing volume and decrease display cost. We report on scaling display size and resolution by demonstrating a 1/8 VGA Ch-LCD using polypyrrole as the conducting polymer. We fabricated these displays using either a vacuum fill or polymer wall/lamination approach and we discus subsequent failure analysis to determine the cause for the line-outs observed on these displays. We present initial results in determining the suitability for using Ch-LCD technology as a pen-input device. Finally, we discuss initial work towards printing the conducting polymer electrodes to determine the feasibility of printing electrodes on plastic substrates in a roll-to-roll, high volume, low cost process.

  16. MOS integrated circuit fault modeling

    NASA Technical Reports Server (NTRS)

    Sievers, M.

    1985-01-01

    Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.

  17. Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals

    PubMed Central

    Shi, Yumeng; Huang, Jing-Kai; Jin, Limin; Hsu, Yu-Te; Yu, Siu Fung; Li, Lain-Jong; Yang, Hui Ying

    2013-01-01

    We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the defect density in MoS2 layers. Field effect transistors were directly fabricated by placing ion gel gate dielectrics on Au-decorated MoS2 layers without the need to transfer these MoS2 layers to SiO2/Si substrates for bottom gate devices. The ion gel method allows probing the intrinsic electrical properties of the as-grown and Au-decorated MoS2 layers. This study shows that Au NPs impose remarkable p-doping effects to the MoS2 transistors without degrading their electrical characteristics. PMID:23670611

  18. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, single layer transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high electrical conductivity, tunable band-gap, and strong light-matter interaction. However, available growth methods produce large-area polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Complementary electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism.

  19. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, ultrathin transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high carrier mobility and tunable band-gap. However, available growth methods produce polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Correlated electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism. This abstract is replacing MAR16-2015-004166 that had exceeded the character limit.

  20. Developing and validating advanced divertor solutions on DIII-D for next-step fusion devices

    SciTech Connect

    Guo, H. Y.; Hill, D. N.; Leonard, A. W.; Allen, S. L.; Stangeby, P. C.; Thomas, D.; Unterberg, E. A.; Abrams, T.; Boedo, J.; Briesemeister, A. R.; Buchenauer, D.; Bykov, I.; Canik, J. M.; Chrobak, C.; Covele, B.; Ding, R.; Doerner, R.; Donovan, D.; Du, H.; Elder, D.; Eldon, D.; Lasa, A.; Groth, M.; Guterl, J.; Jarvinen, A.; Hinson, E.; Kolemen, E.; Lasnier, C. J.; Lore, J.; Makowski, M. A.; McLean, A.; Meyer, B.; Moser, A. L.; Nygren, R.; Owen, L.; Petrie, T. W.; Porter, G. D.; Rognlien, T. D.; Rudakov, D.; Sang, C. F.; Samuell, C.; Si, H.; Schmitz, O.; Sontag, A.; Soukhanovskii, V.; Wampler, W.; Wang, H.; Watkins, J. G.

    2016-09-14

    A major challenge facing the design and operation of next-step high-power steady-state fusion devices is to develop a viable divertor solution with order-of-magnitude increases in power handling capability relative to present experience, while having acceptable divertor target plate erosion and being compatible with maintaining good core plasma confinement. A new initiative has been launched on DIII-D to develop the scientific basis for design, installation, and operation of an advanced divertor to evaluate boundary plasma solutions applicable to next step fusion experiments beyond ITER. Developing the scientific basis for fusion reactor divertor solutions must necessarily follow three lines of research, which we plan to pursue in DIII-D: (1) Advance scientific understanding and predictive capability through development and comparison between state-of-the art computational models and enhanced measurements using targeted parametric scans; (2) Develop and validate key divertor design concepts and codes through innovative variations in physical structure and magnetic geometry; (3) Assess candidate materials, determining the implications for core plasma operation and control, and develop mitigation techniques for any deleterious effects, incorporating development of plasma-material interaction models. These efforts will lead to design, installation, and evaluation of an advanced divertor for DIII-D to enable highly dissipative divertor operation at core density (n e/n GW), neutral fueling and impurity influx most compatible with high performance plasma scenarios and reactor relevant plasma facing components (PFCs). In conclusion, this paper highlights the current progress and near-term strategies of boundary/PMI research on DIII-D.

  1. Developing and validating advanced divertor solutions on DIII-D for next-step fusion devices

    NASA Astrophysics Data System (ADS)

    Guo, H. Y.; Hill, D. N.; Leonard, A. W.; Allen, S. L.; Stangeby, P. C.; Thomas, D.; Unterberg, E. A.; Abrams, T.; Boedo, J.; Briesemeister, A. R.; Buchenauer, D.; Bykov, I.; Canik, J. M.; Chrobak, C.; Covele, B.; Ding, R.; Doerner, R.; Donovan, D.; Du, H.; Elder, D.; Eldon, D.; Lasa, A.; Groth, M.; Guterl, J.; Jarvinen, A.; Hinson, E.; Kolemen, E.; Lasnier, C. J.; Lore, J.; Makowski, M. A.; McLean, A.; Meyer, B.; Moser, A. L.; Nygren, R.; Owen, L.; Petrie, T. W.; Porter, G. D.; Rognlien, T. D.; Rudakov, D.; Sang, C. F.; Samuell, C.; Si, H.; Schmitz, O.; Sontag, A.; Soukhanovskii, V.; Wampler, W.; Wang, H.; Watkins, J. G.

    2016-12-01

    A major challenge facing the design and operation of next-step high-power steady-state fusion devices is to develop a viable divertor solution with order-of-magnitude increases in power handling capability relative to present experience, while having acceptable divertor target plate erosion and being compatible with maintaining good core plasma confinement. A new initiative has been launched on DIII-D to develop the scientific basis for design, installation, and operation of an advanced divertor to evaluate boundary plasma solutions applicable to next step fusion experiments beyond ITER. Developing the scientific basis for fusion reactor divertor solutions must necessarily follow three lines of research, which we plan to pursue in DIII-D: (1) Advance scientific understanding and predictive capability through development and comparison between state-of-the art computational models and enhanced measurements using targeted parametric scans; (2) Develop and validate key divertor design concepts and codes through innovative variations in physical structure and magnetic geometry; (3) Assess candidate materials, determining the implications for core plasma operation and control, and develop mitigation techniques for any deleterious effects, incorporating development of plasma-material interaction models. These efforts will lead to design, installation, and evaluation of an advanced divertor for DIII-D to enable highly dissipative divertor operation at core density (n e/n GW), neutral fueling and impurity influx most compatible with high performance plasma scenarios and reactor relevant plasma facing components (PFCs). This paper highlights the current progress and near-term strategies of boundary/PMI research on DIII-D.

  2. Developing and validating advanced divertor solutions on DIII-D for next-step fusion devices

    DOE PAGES

    Guo, H. Y.; Hill, D. N.; Leonard, A. W.; ...

    2016-09-14

    A major challenge facing the design and operation of next-step high-power steady-state fusion devices is to develop a viable divertor solution with order-of-magnitude increases in power handling capability relative to present experience, while having acceptable divertor target plate erosion and being compatible with maintaining good core plasma confinement. A new initiative has been launched on DIII-D to develop the scientific basis for design, installation, and operation of an advanced divertor to evaluate boundary plasma solutions applicable to next step fusion experiments beyond ITER. Developing the scientific basis for fusion reactor divertor solutions must necessarily follow three lines of research, whichmore » we plan to pursue in DIII-D: (1) Advance scientific understanding and predictive capability through development and comparison between state-of-the art computational models and enhanced measurements using targeted parametric scans; (2) Develop and validate key divertor design concepts and codes through innovative variations in physical structure and magnetic geometry; (3) Assess candidate materials, determining the implications for core plasma operation and control, and develop mitigation techniques for any deleterious effects, incorporating development of plasma-material interaction models. These efforts will lead to design, installation, and evaluation of an advanced divertor for DIII-D to enable highly dissipative divertor operation at core density (n e/n GW), neutral fueling and impurity influx most compatible with high performance plasma scenarios and reactor relevant plasma facing components (PFCs). In conclusion, this paper highlights the current progress and near-term strategies of boundary/PMI research on DIII-D.« less

  3. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor

    DOE PAGES

    Zheng, Wei; Lin, Junhao; Feng, Wei; ...

    2016-07-19

    2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursormore » at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.« less

  4. Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.

    PubMed

    Pak, Jinsu; Jang, Jingon; Cho, Kyungjune; Kim, Tae-Young; Kim, Jae-Keun; Song, Younggul; Hong, Woong-Ki; Min, Misook; Lee, Hyoyoung; Lee, Takhee

    2015-11-28

    Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared with the pristine MoS2 FETs, caused by more electron-hole pairs separation at the p-n interface. Furthermore, we found the optimized CuPc thickness (∼2 nm) on the MoS2 surface for the best performance as a photodetector with a photoresponsivity of ∼1.98 A W(-1), a detectivity of ∼6.11 × 10(10) Jones, and an external quantum efficiency of ∼12.57%. Our study suggests that the MoS2 vertical hybrid structure with organic material can be promising as efficient photodetecting devices and optoelectronic circuits.

  5. A limited anodic and cathodic potential window of MoS2: limitations in electrochemical applications

    NASA Astrophysics Data System (ADS)

    Nasir, Muhammad Zafir Mohamad; Sofer, Zdenek; Ambrosi, Adriano; Pumera, Martin

    2015-02-01

    Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo4+ to Mo6+) and the catalytic hydrogen evolution reaction due to H3O+ reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ~-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2.Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo4+ to Mo6+) and the catalytic hydrogen evolution reaction due to H3O+ reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ~-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06899h

  6. Pressure confinement effect in MoS2 monolayers

    NASA Astrophysics Data System (ADS)

    Li, Fangfei; Yan, Yalan; Han, Bo; Li, Liang; Huang, Xiaoli; Yao, Mingguang; Gong, Yuanbo; Jin, Xilian; Liu, Baoli; Zhu, Chuanrui; Zhou, Qiang; Cui, Tian

    2015-05-01

    With ever increasing interest in layered materials, molybdenum disulfide has been widely investigated due to its unique optoelectronic properties. Pressure is an effective technique to tune the lattice and electronic structure of materials such that high pressure studies can disclose new structural and optical phenomena. In this study, taking MoS2 as an example, we investigate the pressure confinement effect on monolayer MoS2 by in situ high pressure Raman and photoluminescence (PL) measurements. Our results reveal a structural deformation of monolayer MoS2 starting from 0.84 GPa, which is evidenced by the splitting of E12g and A1g modes. A further compression leads to a transition from the 1H-MoS2 phase to a novel structure evidenced by the appearance of two new peaks located at 200 and 240 cm-1. This is a distinct feature of monolayer MoS2 compared with bulk MoS2. The new structure is supposed to have a distorted unit with the S atoms slided within a single layer like that of metastable 1T'-MoS2. However, unlike the non-photoluminescent 1T'-MoS2 structure, our monolayer shows a remarkable PL peak and a pressure-induced blue shift up to 13.1 GPa. This pressure-dependent behavior might enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.With ever increasing interest in layered materials, molybdenum disulfide has been widely investigated due to its unique optoelectronic properties. Pressure is an effective technique to tune the lattice and electronic structure of materials such that high pressure studies can disclose new structural and optical phenomena. In this study, taking MoS2 as an example, we investigate the pressure confinement effect on monolayer MoS2 by in situ high pressure Raman and photoluminescence (PL) measurements. Our results reveal a structural deformation of monolayer MoS2 starting from 0.84 GPa, which is evidenced by the

  7. 76 FR 71982 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-21

    ... Microbiology/ Medical Countermeasure Devices; Public Meeting; Reopening of Comment Period AGENCY: Food and Drug... Regulatory Science for Highly Multiplexed Microbiology/ Medical Countermeasure Devices'' that published in... highly multiplexed microbiology/medical countermeasure (MCM) devices, their clinical application...

  8. Large scale MoS2 nanosheet logic circuits integrated by photolithography on glass

    NASA Astrophysics Data System (ADS)

    Kwon, Hyeokjae; Jeon, Pyo Jin; Kim, Jin Sung; Kim, Tae-Young; Yun, Hoyeol; Lee, Sang Wook; Lee, Takhee; Im, Seongil

    2016-12-01

    We demonstrate 500 × 500 μm2 large scale polygrain MoS2 nanosheets and field effect transistor (FET) circuits integrated using those nanosheets, which are initially grown on SiO2/p+-Si by chemical vapor deposition but transferred onto glass substrate to be patterned by photolithography. In fact, large scale growth of two-dimensional MoS2 and its conventional way of patterning for integrated devices have remained as one of the unresolved important issues. In the present study, we achieved maximum linear mobility of ˜9 cm2 V-1 s-1 from single-domain MoS2 FET on SiO2/p+-Si substrate and 0.5˜3.0 cm2 V-1 s-1 from large scale MoS2 sheet transferred onto glass. Such reduced mobility is attributed to the transfer process-induced wrinkles and crevices, domain boundaries, residue on MoS2, and loss of the back gate-charging effects that might exist due to SiO2/p+-Si substrate. Among 16 MoS2-based FETs, 13 devices successfully work (yield was more than 80%) producing NOT, NOR, and NAND logic circuits. Inverter (NOT gate) shows quite a high voltage gain over 12 at a supply voltage of 5 V, also displaying 60 μs switching speed in kilohertz dynamics.

  9. Polarization-dependent optical absorption of MoS2 for refractive index sensing

    PubMed Central

    Tan, Yang; He, Ruiyun; Cheng, Chen; Wang, Dong; Chen, Yanxue; Chen, Feng

    2014-01-01

    As a noncentrosymmetric crystal with spin-polarized band structure, MoS2 nanomaterials have attracts increasing attention in many areas such as lithium ion batteries, flexible electronic devices, photoluminescence and valleytronics. The investigation of MoS2 is mainly focused on the electronics and spintronics instead of optics, which restrict its applications as key elements of photonics. In this work, we demonstrate the first observation of the polarization-dependent optical absorption of the MoS2 thin film, which is integrated onto an optical waveguide device. With this feature, a novel optical sensor combining MoS2 thin-film and a microfluidic structure has been constituted to achieve the sensitive monitoring of refractive index. Our work indicates the MoS2 thin film as a complementary material to graphene for the optical polarizer in the visible light range, and explores a new application direction of MoS2 nanomaterials for the construction of photonic circuits. PMID:25516116

  10. Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N.; Sangwan, Vinod K.; Jariwala, Deep; Schmucker, Scott W.; Marks, Tobin J.; Hersam, Mark C.

    2017-02-01

    Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

  11. Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

    PubMed Central

    Andleeb, Shaista; Kumar Singh, Arun; Eom, Jonghwa

    2015-01-01

    We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of ~4 without degrading the electrical characteristics of MoS2 devices. PMID:27877810

  12. Enhancing the interlayer adhesive force in twisted multilayer MoS2 by thermal annealing treatment

    NASA Astrophysics Data System (ADS)

    Jin, Ke; LIU, Dameng; Tian, Yu

    2015-10-01

    Few-layer MoS2 has recently gained great attention owing to its remarkable mechanical and photoelectric properties, which are strongly influenced by the interactions and relative orientations between layers. Here, we report on Raman scattering measurements of twisted MoS2 flakes prepared by exfoliation and nondestructive transfer. Thermal annealing treatment can effectively enhance the interlayer coupling of twisted MoS2 and lead to a van der Waals (vdW) interaction between two stacked layers. We have roughly calculated the interlayer coupling force by a diatomic chain model (DCM) and found that the interlayer adhesive force increased by ˜20% compared with no-treatment samples. We additionally found that the non-Bernal stacking structure of MoS2 induces a weakening in the interlayer coupling. This study could promote the development of novel semiconductors, optoelectronic devices, and superlubricity materials.

  13. Polarization-dependent photocurrent in MoS2 phototransistor

    NASA Astrophysics Data System (ADS)

    Li, Jiu; Yu, Wentao; Chu, Saisai; Yang, Hong; Shi, Kebin; Gong, Qihuang

    2015-03-01

    Monolayer or few-layer molybdenum disulfide (MoS2) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS2 thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS2 transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS2 field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS2 FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos2θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.

  14. Characterization of a linear device developed for research on advanced plasma imaging and dynamics.

    PubMed

    Chung, J; Lee, K D; Seo, D C; Nam, Y U; Choi, M C

    2010-10-01

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 °C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5×10(-8) Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations.

  15. Characterization of a linear device developed for research on advanced plasma imaging and dynamics

    SciTech Connect

    Chung, J.; Lee, K. D.; Seo, D. C.; Nam, Y. U.; Choi, M. C.

    2010-10-15

    Within the scope of long term research on imaging diagnostics for steady-state plasmas and understanding of edge plasma physics through diagnostics with conventional spectroscopic methods, we have constructed a linear electron cyclotron resonance (ECR) plasma device named Research on Advanced Plasma Imaging and Dynamics (RAPID). It has a variety of axial magnetic field profiles provided by eight water-cooled magnetic coils and two dc power supplies. The positions of the magnetic coils are freely adjustable along the axial direction and the power supplies can be operated with many combinations of electrical wiring to the coils. Here, a 6 kW 2.45 GHz magnetron is used to produce steady-state hydrogen, helium, and argon plasmas with central magnetic fields of 875 and/or 437.5 G (second harmonic). In order to achieve the highest possible plasma performance within the limited input parameters, wall conditioning experiments were carried out. Chamber bake-out was achieved with heating coils that were wound covering the vessel, and long-pulse electron cyclotron heating discharge cleaning was also followed after 4 days of bake-out. A uniform bake-out temperature (150 deg. C) was achieved by wrapping the vessel in high temperature thermal insulation textile and by controlling the heating coil current using a digital control system. The partial pressure changes were observed using a residual gas analyzer, and a total system pressure of 5x10{sup -8} Torr was finally reached. Diagnostic systems including a millimeter-wave interferometer, a high resolution survey spectrometer, a Langmuir probe, and an ultrasoft x-ray detector were used to provide the evidence that the plasma performance was improved as we desired. In this work, we present characterization of the RAPID device for various system conditions and configurations.

  16. A microtomography beamline at the Louisiana State University Center for Advanced Microstructures and Devices synchrotron

    NASA Astrophysics Data System (ADS)

    Ham, Kyungmin; Jin, Hua; Butler, Leslie G.; Kurtz, Richard L.

    2002-03-01

    A microtomography beamline has been recently assembled and is currently operating at the Louisiana State University's Center for Advanced Microstructures and Devices synchrotron (CAMD). It has been installed on a bending magnet white-light beamline at port 7A. With the storage ring operating at 1.5 GeV, this beamline has a maximum usable x-ray energy of ˜15 keV. The instrumentation consists of computer-controlled positioning stages for alignment and rotation, a CsI(Tl) phosphor screen, a reflecting mirror, a microscope objective (1:1, 1:4), and Linux/LabVIEW-controlled charge coupled device. With the 1:4 objective, the maximum spatial resolution is 2.25 μm. The positioning and image acquisition computers communicate via transfer control protocol/internet protocol (TCP/IP). A small G4/Linux cluster has been installed for the purpose of on-site reconstruction. Instrument, alignment and reconstruction programs are written in MATLAB, IDL, and C. The applications to date are many and we present several examples. Several biological samples have been studied as part of an effort on biological visualization and computation. Future improvements to this microtomography station include the addition of a double-multilayer monochromator, allowing one to evaluate the three-dimensional elemental composition of materials. Plans also include eventual installation at the CAMD 7 T wiggler beamline, providing x rays in excess of 50 keV to provide better penetration of higher mass-density materials.

  17. Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts.

    PubMed

    Yoon, Hyong Seo; Joe, Hang-Eun; Jun Kim, Sun; Lee, Hee Sung; Im, Seongil; Min, Byung-Kwon; Jun, Seong Chan

    2015-05-20

    Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO2 gases based on the metal work function and the Schottky barrier height change.

  18. Study of interface state trap density on characteristics of MOS-HEMT

    NASA Astrophysics Data System (ADS)

    Tseng, Ming-Chun; Hung, Ming-Hsien; Wuu, Dong-Sing; Horng, Ray-Hua

    2015-03-01

    In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al2O3/u-GaN/AlN buffer/ Si substrate and Al2O3 (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl3 plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al2O3 was grown on the treated surface to reduce the interface state trap densities (Dit). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (Vbk), on-resistance (Ron), threshold voltage (Vth) and drain current (Id) of MOS-HEMT. The Vth of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl3 plasma and organic solvents clean treatment shows the lowest Vth of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

  19. Instrumentation for synchrotron based micromachining at the Center for Advanced Microstructures and Devices (abstract)

    NASA Astrophysics Data System (ADS)

    Aigeldinger, G.; Goettert, J.; Desta, Y.; Ling, Z. L.; Rupp, L.

    2002-03-01

    The J. Bennett Johnston Sr., Center for Advanced Microstructures and Devices (CAMD) is a synchrotron radiation facility owned by Louisiana State University and operated with financial support from the State of Louisiana (for information how to submit a project proposal go to: http://www.camd.lsu.edu). The centerpiece of CAMD is a 1.3-1.5 GeV electron storage ring. CAMD supports a strong program in x-ray lithography micromachining (XRLM) or LIGA. A total of four beamlines equipped with different scanners is available for exposures. A 2.500 sq. ft class 100 clean room provides basic processing capability for MEMS including optical lithography, thin film deposition, electroplating, and metrology. Three micromachining beamlines are connected to bending magnets. All beamlines are "white light" beamlines, terminated with a beryllium window. The typical source point to scanner distance is 10 m and the horizontal acceptance ranges from 6.5 to 10 mrad. A number of low Z filters can be inserted into the beam adapting the exposure spectrum to the resist thickness. Two beamlines are equipped with commercial scanners from Jenoptik GmbH (for details see Jenoptik's webpage at www.jo-mikrotechnik.com/) and one beamline with a "vacuum" scanner designed in house. The latest model of Jenoptik's DEX02 scanner has been installed at CAMD's XRLM1 beamline in December 2000 and allows advanced exposures using overlay as well as tilt and rotate functions. In addition to these beamlines CAMD has installed a "white light" beamline at its 7 T wiggler source. Preliminary exposure tests in ultrathick samples (1 mm and thicker) have been conducted using an "air scanner." Currently this beamline is dismantled and will be reinstalled together with a PX beamline. In the article further details of the beamlines and scanners as well as some examples of applications of LIGA microstructures fabricated at CAMD will be discussed.

  20. Heating-up Synthesis of MoS2 Nanosheets and Their Electrical Bistability Performance

    NASA Astrophysics Data System (ADS)

    Li, Xu; Tang, Aiwei; Li, Jiantao; Guan, Li; Dong, Guoyi; Teng, Feng

    2016-03-01

    Molybdenum disulfide (MoS2) nanosheets were synthesized by using a simple heating-up approach, in which 1-dodecanethiol (DDT) was used not only as a sulfur source but also as the surface ligand. The sheet-like morphology was confirmed by the transmission electron microscopy (TEM) and atomic force microscopy (AFM) results, and the X-ray diffraction (XRD) patterns and Raman spectrum were employed to characterize the structure of the as-synthesized MoS2 nanosheets. The as-obtained MoS2 nanosheets blending with a polymer could be used to fabricate an electrically bistable device through a simple spin-coating method, and the device exhibited an obvious electrical bistability in the I-V curve. The charge transport of the device was discussed based on the organic electronic models.

  1. Return on Investment and Technology-Based Training--An Introduction and a Case Study at Advanced Micro Devices.

    ERIC Educational Resources Information Center

    Masumian, Bijan

    1999-01-01

    Summarizes findings from studies comparing classroom and technology-based approaches to training and the respective Return on Investment (ROI) data. Highlights several advantages of technology-based training. Offers information and initial ROI numbers on the use of technology-based training at Advanced Micro Devices, a global manufacturer of…

  2. Teaching Advanced Operation of an iPod-Based Speech-Generating Device to Two Students with Autism Spectrum Disorders

    ERIC Educational Resources Information Center

    Achmadi, Donna; Kagohara, Debora M.; van der Meer, Larah; O'Reilly, Mark F.; Lancioni, Giulio E.; Sutherland, Dean; Lang, Russell; Marschik, Peter B.; Green, Vanessa A.; Sigafoos, Jeff

    2012-01-01

    We evaluated a program for teaching two adolescents with autism spectrum disorders (ASD) to perform more advanced operations on an iPod-based speech-generating device (SGD). The effects of the teaching program were evaluated in a multiprobe multiple baseline across participants design that included two intervention phases. The first intervention…

  3. Solution-processable exfoliation and photoelectric properties of two-dimensional layered MoS2 photoelectrodes.

    PubMed

    Zhao, Qiyi; Guo, Yaohui; Zhou, Yixuan; Yan, Xianding; Xu, Xinlong

    2017-03-15

    MoS2 based photoelectrodes with different thickness have been fabricated by liquid phase exfoliation and vacuum filtration method. Absorption spectra clearly demonstrated two splitting absorption peaks due to the spin-orbit coupling and first principle calculation also indicate the spin-orbit coupling effect. These results combined with the SEM and TEM measurement suggests that the randomly stacked MoS2 films can maintain the properties of few-layered materials with good quality. As a proof-of-principle applications, photoelectrochemical experiments of MoS2 based photoelectrodes manifests that these MoS2 films are one kind of reversible and stable optoelectronic materials with tunable microampere photocurrent as the change of film thickness. The rising and decay response of photocurrent are in the scale of several seconds. The results will be useful for the MoS2 based scalable photovoltaic devices and photodetectors.

  4. Highly efficient, high speed vertical photodiodes based on few-layer MoS2

    NASA Astrophysics Data System (ADS)

    Li, Zhen; Chen, Jihan; Dhall, Rohan; Cronin, Stephen B.

    2017-03-01

    Layered transition metal dichalcogenides, such as MoS2, have recently emerged as a promising material system for electronic and optoelectronic applications. The two-dimensional nature of these materials enables facile integration for vertical device design with novel properties. Here, we report highly efficient photocurrent generation from vertical MoS2 devices fabricated using asymmetric metal contacts, exhibiting an external quantum efficiency of up to 7%. Compared to in-plane MoS2 devices, the vertical design of these devices has a much larger junction area, which is essential for achieving highly efficient photovoltaic devices. Photocurrent and photovoltage spectra are measured over the photon energy range from 1.25 to 2.5 eV, covering both the 1.8 eV direct K-point optical transition and the 1.3 eV Σ-point indirect transition in MoS2. Photocurrent peaks corresponding to both direct and indirect transitions are observed in the photocurrent spectra and exhibit different photovoltage-current characteristics. Compared to previous in-plane devices, a substantially shorter photoresponse time of 7.3 μs is achieved due to fast carrier sweeping in the vertical devices, which exhibit a -3 dB cutoff frequency of 48 kHz.

  5. Army Instructors’ Use of Mobile Devices in the Infantry Advanced Leaders Course

    DTIC Science & Technology

    2014-08-01

    mobile devices in the classroom . 15. SUBJECT TERMS Training, Mobile Devices, Army Training, Adaptive Training, Blended Learning...either in a classroom or in a field location. This project explored the use of mobile devices to assist instructors as their role moves from... classroom technology infrastructure. Overall, instructors saw some promise for the future potential of tablet devices for instructor use, but encountered

  6. Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics

    PubMed Central

    Nam, Hongsuk; Oh, Bo-Ram; Chen, Pengyu; Chen, Mikai; Wi, Sungjin; Wan, Wenjie; Kurabayashi, Katsuo; Liang, Xiaogan

    2015-01-01

    Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS2-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS2 transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be KD = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 108 M−1s−1 and (1.97 ± 0.08) × 10−4 s−1, respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities. PMID:26014289

  7. The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates

    DOE PAGES

    Yan, Zhequan; Chen, Liang; Yoon, Mina; ...

    2016-11-08

    In this paper, we investigate the role of interfacial electronic properties on the phonon transport in two-dimensional MoS2 adsorbed on metal substrates (Au and Sc) using first-principles density functional theory and the atomistic Green’s function method. Our study reveals that the different degree of orbital hybridization and electronic charge distribution between MoS2 and metal substrates play a significant role in determining the overall phonon–phonon coupling and phonon transmission. The charge transfer caused by the adsorption of MoS2 on Sc substrate can significantly weaken the Mo–S bond strength and change the phonon properties of MoS2, which result in a significant changemore » in thermal boundary conductance (TBC) from one lattice-stacking configuration to another for same metallic substrate. In a lattice-stacking configuration of MoS2/Sc, weakening of the Mo–S bond strength due to charge redistribution results in decrease in the force constant between Mo and S atoms and substantial redistribution of phonon density of states to low-frequency region which affects overall phonon transmission leading to 60% decrease in TBC compared to another configuration of MoS2/Sc. Strong chemical coupling between MoS2 and the Sc substrate leads to a significantly (~19 times) higher TBC than that of the weakly bound MoS2/Au system. Our findings demonstrate the inherent connection among the interfacial electronic structure, the phonon distribution, and TBC, which helps us understand the mechanism of phonon transport at the MoS2/metal interfaces. Finally, the results provide insights for the future design of MoS2-based electronics and a way of enhancing heat dissipation at the interfaces of MoS2-based nanoelectronic devices.« less

  8. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  9. [Treatment of advanced heart failure in women: heart transplantation and ventricular assist devices].

    PubMed

    Cipriani, Manlio; Macera, Francesca; Verde, Alessandro; Bruschi, Giuseppe; del Medico, Marta; Oliva, Fabrizio; Martinelli, Luigi; Frigerio, Maria

    2012-05-01

    Women candidates for heart transplantation are definitely less than men, just 20% of all patients transplanted; even in the INTERMACS registry they represent only 21% of all ventricular assist devices (VAD) implanted. The reasons for this big difference are discussed in this article. Why women are less frequently assessed for unconventional therapies? Are they sicker or just less regarded? Our experience and the literature show us clear epidemiological, clinical and treatment differences that could lead to a lower prevalence of end-stage disease in women of an age suitable for unconventional therapies. Once on the transplant list, women wait less than men for a heart transplant, because they present with more severe disease, have a lower body mass index and undergo less VAD implants. After transplantation women's survival is comparable to men's, although they usually complain of a lower quality of life. Females receive less often a VAD than men. The main reasons for this include presentation with advanced heart failure at an older age than men, worse outcomes related to small body surface area, and lower survival rates on VAD when implanted as bridge to heart transplantation.

  10. Advanced Aerodynamic Devices to Improve the Performance, Economics, Handling, and Safety of Heavy Vehicles

    SciTech Connect

    Robert J. Englar

    2001-05-14

    Research is being conducted at the Georgia Tech Research Institute (GTRI) to develop advanced aerodynamic devices to improve the performance, economics, stability, handling and safety of operation of Heavy Vehicles by using previously-developed and flight-tested pneumatic (blown) aircraft technology. Recent wind-tunnel investigations of a generic Heavy Vehicle model with blowing slots on both the leading and trailing edges of the trailer have been conducted under contract to the DOE Office of Heavy Vehicle Technologies. These experimental results show overall aerodynamic drag reductions on the Pneumatic Heavy Vehicle of 50% using only 1 psig blowing pressure in the plenums, and over 80% drag reductions if additional blowing air were available. Additionally, an increase in drag force for braking was confirmed by blowing different slots. Lift coefficient was increased for rolling resistance reduction by blowing only the top slot, while downforce was produced for traction increase by blowing only the bottom. Also, side force and yawing moment were generated on either side of the vehicle, and directional stability was restored by blowing the appropriate side slot. These experimental results and the predicted full-scale payoffs are presented in this paper, as is a discussion of additional applications to conventional commercial autos, buses, motor homes, and Sport Utility Vehicles.

  11. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    NASA Astrophysics Data System (ADS)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  12. Macromodeling and optimization of digital MOS VLSI circuits

    NASA Astrophysics Data System (ADS)

    Matson, M. D.; Glasser, L. A.

    1986-03-01

    Power consumption and signal delay are crucial to the design of high-performance VLSI circuits. This paper presents CAD tools for modeling and optimizing digital MOS designs. The tools determine the transistor sizes that minimize circuit power consumption subject to constraints on signal path delays. Computational efficiency is obtained through macromodeling techniques and a specialized optimization algorithm. The macromodels are based on device equations, and encapsulate logic gate behavior in a set of simple yet accurate formulas. The optimization algorithm exploits properties of the digital MOS domain to convert the primal optimization problem into a dual form which is much easier to solve. The result is a pair of CAD tools that can optimize a circuit in roughly the amount of time needed to perform a transistor level simulation of the circuit.

  13. Mobility engineering and a metal-insulator transition in monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Radisavljevic, Branimir; Kis, Andras

    2013-09-01

    Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising channel materials for field-effect transistors (FETs). The presence of a direct bandgap in monolayer MoS2 due to quantum-mechanical confinement allows room-temperature FETs with an on/off ratio exceeding 108. The presence of high- κ dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. The dependence of mobility on temperature shows clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectric. At the same time, phonon scattering shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS2 due to strong electron-electron interactions. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying correlation effects in mesoscopic systems.

  14. Long Term Therapeutic Efficacy of a Soft Monobloc Mandibular Advancement Device in Adults with Obstructive Sleep Apnea

    PubMed Central

    Ballanti, Fabiana; Ranieri, Salvatore; Cozza, Paola

    2015-01-01

    Aim. To evaluate the long term (48 months) therapeutic efficacy of a soft monobloc mandibular advancement device in adult patients with mild or moderate obstructive sleep apnea. Methods. The study population comprised 28 patients (6 female and 22 male, mean age 52.2 ± 6.8 years) affected by obstructive sleep apnea. After a baseline medical and somnographic examination, a functional examination of the stomatognathic system, and a questionnaire focused on sleep-related qualities and a daytime somnolence, each patient received an individual device. Two follow-ups were made 6 months (T1) and 48 months (T2) after soft monobloc mandibular advancement device treatment had been initiated, and all initial examinations were repeated. Results. The statistical analysis showed a significant decrease in body mass index value between T1 and T2 (ρ = 0,012), an increase of Epworth sleepiness scale value between T1 and T2 (ρ = 0,012), and a significant improvement and decrease of apnea/hypopnea index between T0 and T1 (ρ = 0,010) and between T0 and T2 (ρ = 0,013). Conclusion. Treatment with the soft monobloc mandibular advancement device is a therapeutic solution with long term and stable effects (48 months) for patients suffering from mild or moderate obstructive sleep apnea. PMID:25642453

  15. Large-area nanofabrication and applications in advanced nanoelectronic and nanophotonic devices

    NASA Astrophysics Data System (ADS)

    Ding, Wei

    The research work presented in this dissertation includes novel large area nanofabrication techniques and their applications in advanced nanoelectronic and nanophotonic devices. The fabrications and applications include: 1) high performance transparent electrodes, 2) a novel plasmonic nanocavity and its applications in organic solar cells and light emitting diodes, and 3) a bipolar plasmonic nonlinear optical device to enhance and tune second harmonic generation. Based upon these topics, the thesis is divided into the following parts. First, a novel transparent electrode (TE), metallic deep subwavelength mesh electrode is developed and fabricated, showing better transmittance and conductance than previous TEs. Its performance dependence on nanostructure geometries and materials are investigated. The deep-subwavelength mesh electrode also has excellent antiglare properties. Such electrodes are fabricated on 4" wafer by nanoimprint, scalable to meter sizes. Second, a novel plasmonic nanocavity from the MESH is developed, named "plasmonic cavity with subwavelength hole-array (PlaCSH)", consisting of a thin MESH as a transparent front electrode, a thin metal back electrode, and in-between layer of active material. This structure is used to create high performance solar cells and LEDs. PlaCSH solar cell gives a solution to three central challenges in organic solar cells (light coupling into solar cell, light trapping in a sub-absorption-length-thick layer, and replacement of the indium-tin-oxide). Experimentally, the PlaCSH polymer SCs achieve high light coupling-efficiency/absorptance/power conversion efficiency, along with broad-band, Omni angle/polarization acceptance. In OLEDs, PlaCSH shows numerous benefits with both the small- molecule and polymer active materials. Enhanced light extraction, internal quantum efficiency, ambient light absorption, contrast, viewing angle, brightness, and decreased glare are all observed. The above experiments -- along with

  16. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride.

    PubMed

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-10-13

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.

  17. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    PubMed Central

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-01-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

  18. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-10-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.

  19. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

    PubMed

    Pierucci, Debora; Henck, Hugo; Avila, Jose; Balan, Adrian; Naylor, Carl H; Patriarche, Gilles; Dappe, Yannick J; Silly, Mathieu G; Sirotti, Fausto; Johnson, A T Charlie; Asensio, Maria C; Ouerghi, Abdelkarim

    2016-07-13

    Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.

  20. A limited anodic and cathodic potential window of MoS2: limitations in electrochemical applications.

    PubMed

    Nasir, Muhammad Zafir Mohamad; Sofer, Zdenek; Ambrosi, Adriano; Pumera, Martin

    2015-02-21

    Molybdenum disulphide has been touted as a good material with diverse possible applications such as an energy storage and sensing platform. However, we demonstrate here the limitation of MoS2 as an analytical sensing platform due to the limited potential window in both the anodic and cathodic regions attributed to the inherent electrochemistry (oxidation of Mo(4+) to Mo(6+)) and the catalytic hydrogen evolution reaction due to H3O(+) reduction on the MoS2 surface, respectively. The electrochemical window of MoS2 lies in the region of ∼-0.6 V to +0.7 V (vs. AgCl). We show that such a limited working potential window characteristic of MoS2 precludes the detection of important analytes such as nitroaromatic explosives, pesticides and mycotoxins which are instead detectable on carbon surfaces. The limited potential window of MoS2 has to be taken into consideration in the construction of electroanalytical devices based on MoS2.

  1. Automated hotspot analysis with aerial image CD metrology for advanced logic devices

    NASA Astrophysics Data System (ADS)

    Buttgereit, Ute; Trautzsch, Thomas; Kim, Min-ho; Seo, Jung-Uk; Yoon, Young-Keun; Han, Hak-Seung; Chung, Dong Hoon; Jeon, Chan-Uk; Meyers, Gary

    2014-09-01

    Continuously shrinking designs by further extension of 193nm technology lead to a much higher probability of hotspots especially for the manufacturing of advanced logic devices. The CD of these potential hotspots needs to be precisely controlled and measured on the mask. On top of that, the feature complexity increases due to high OPC load in the logic mask design which is an additional challenge for CD metrology. Therefore the hotspot measurements have been performed on WLCD from ZEISS, which provides the benefit of reduced complexity by measuring the CD in the aerial image and qualifying the printing relevant CD. This is especially of advantage for complex 2D feature measurements. Additionally, the data preparation for CD measurement becomes more critical due to the larger amount of CD measurements and the increasing feature diversity. For the data preparation this means to identify these hotspots and mark them automatically with the correct marker required to make the feature specific CD measurement successful. Currently available methods can address generic pattern but cannot deal with the pattern diversity of the hotspots. The paper will explore a method how to overcome those limitations and to enhance the time-to-result in the marking process dramatically. For the marking process the Synopsys WLCD Output Module was utilized, which is an interface between the CATS mask data prep software and the WLCD metrology tool. It translates the CATS marking directly into an executable WLCD measurement job including CD analysis. The paper will describe the utilized method and flow for the hotspot measurement. Additionally, the achieved results on hotspot measurements utilizing this method will be presented.

  2. Therapeutic outcomes of mandibular advancement devices as an initial treatment modality for obstructive sleep apnea

    PubMed Central

    Park, Pona; Jeon, Hyoung Won; Han, Doo Hee; Won, Tae-Bin; Kim, Dong-Young; Rhee, Chae-Seo; Kim, Hyun Jik

    2016-01-01

    Abstract Although continuous positive airway pressure (CPAP) is a highly efficacious treatment for obstructive sleep apnea (OSA), there is a need for alternative treatment options, such as sleep surgeries and mandibular advancement devices (MADs), to overcome the limitations of CPAP. This study aimed to analyze the therapeutic outcomes of OSA subjects who were treated with a MAD, and to estimate the clinical impact of MAD as a first-line treatment for OSA. Forty-seven patients diagnosed with OSA received an adjustable MAD as an initial treatment. Drug-induced sleep endoscopic findings and sleep parameters (both pre-MAD and post-MAD treatment), such as apnea index, oxygen saturation, and degree of daytime sleepiness, were assessed retrospectively. The MAD treatment resulted in a significant reduction in apnea–hypopnea index, and also a significant elevation in lowest oxygen saturation. Satisfactory results of MAD treatment as a first treatment modality were observed in 27 patients, and a successful outcome was reached in approximately 72% of patients. The OSA patients who had lower body mass index and upper airway narrowing at the level of palate and tongue base showed relatively higher rates of a satisfactory outcome even in cases of moderate or severe OSA. These results suggest that the use of a MAD may be an alternative treatment option in OSA patients with retropalatal and retroglossal area narrowing regardless of disease severity. Additionally, MADs can be recommended as an initial treatment modality, and the effectiveness of MADs in achieving success may not be inferior to CPAP. PMID:27861349

  3. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    NASA Astrophysics Data System (ADS)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm-2 eV-1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement.

  4. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    PubMed Central

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

  5. Energy band alignment of high-k oxide heterostructures at MoS2/Al2O3 and MoS2/ZrO2 interfaces

    NASA Astrophysics Data System (ADS)

    Pradhan, Sangram K.; Xiao, Bo; Pradhan, Aswini K.

    2016-09-01

    Substrate-induced electron energy band alignments of ultrathin molybdenum disulfide (MoS2) films are investigated using photoemission spectroscopy. Thin layer MoS2/Al2O3 and MoS2/ZrO2 interfaces show valence band offset (VBO) values of 3.21 eV and 2.77 eV, respectively. The corresponding conduction-band offset (CBO) values are 3.63 eV and 1.27 eV. Similarly, the calculated VBO and CBO values for an ultrathin layer of MoS2/SiO2 are estimated to be 4.25 and 2.91 eV, respectively. However, a very thick layer of MoS2 on Al2O3 and ZrO2 layers increases the CBO and VBO values by 0.31 eV and 0.2 eV, respectively, due to the shifting of the Mo 4dz2 band toward the Fermi level. The atomic force microscopy images show that the films are atomically smooth and favor the formation of a high-quality interface between the substrate and the film. The investigated luminescence spectra reveal that the MoS2 films show very strong interactions with different high-k surfaces, whereas the Raman spectrum is only weakly influenced by the different dielectric substrates. This interesting finding encourages the application of high-k oxide insulators as gate materials in MoS2-based complementary metal-oxide semiconductors and other electronic devices.

  6. ISS Squat and Deadlift Kinematics on the Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Newby, N.; Caldwell, E.; Sibonga, J.; Ploutz-Snyder, L.

    2014-01-01

    Visual assessment of exercise form on the Advanced Resistive Exercise Device (ARED) on orbit is difficult due to the motion of the entire device on its Vibration Isolation System (VIS). The VIS allows for two degrees of device translational motion, and one degree of rotational motion. In order to minimize the forces that the VIS must damp in these planes of motion, the floor of the ARED moves as well during exercise to reduce changes in the center of mass of the system. To help trainers and other exercise personnel better assess squat and deadlift form a tool was developed that removes the VIS motion and creates a stick figure video of the exerciser. Another goal of the study was to determine whether any useful kinematic information could be obtained from just a single camera. Finally, the use of these data may aid in the interpretation of QCT hip structure data in response to ARED exercises performed in-flight. After obtaining informed consent, four International Space Station (ISS) crewmembers participated in this investigation. Exercise was videotaped using a single camera positioned to view the side of the crewmember during exercise on the ARED. One crewmember wore reflective tape on the toe, heel, ankle, knee, hip, and shoulder joints. This technique was not available for the other three crewmembers, so joint locations were assessed and digitized frame-by-frame by lab personnel. A custom Matlab program was used to assign two-dimensional coordinates to the joint locations throughout exercise. A second custom Matlab program was used to scale the data, calculate joint angles, estimate the foot center of pressure (COP), approximate normal and shear loads, and to create the VIS motion-corrected stick figure videos. Kinematics for the squat and deadlift vary considerably for the four crewmembers in this investigation. Some have very shallow knee and hip angles, and others have quite large ranges of motion at these joints. Joint angle analysis showed that crewmembers

  7. New Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Balestra, F.

    2008-11-01

    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

  8. Two-dimensional MoS2: A promising building block for biosensors.

    PubMed

    Gan, Xiaorong; Zhao, Huimin; Quan, Xie

    2017-03-15

    Recently, two-dimensional (2D) layered nanomaterials have trigged intensive interest due to the intriguing physicochemical properties that stem from a quantum size effect connected with their ultra-thin structure. In particular, 2D molybdenum disulfide (MoS2), as an emerging class of stable inorganic graphene analogs with intrinsic finite bandgap, would possibly complement or even surpass graphene in electronics and optoelectronics fields. In this review, we first discuss the historical development of ultrathin 2D nanomaterials. Then, we are concerned with 2D MoS2 including its structure-property relationships, synthesis methods, characterization for the layer thickness, and biosensor applications over the past five years. Thereinto, we are highlighting recent advances in 2D MoS2-based biosensors, especially emphasize the preparation of sensing elements, roles of 2D MoS2, and assay strategies. Finally, on the basis of the current achievements on 2D MoS2 and other ultrathin layered nanomaterials, perspectives on the challenges and opportunities for the exploration of 2D MoS2-based biosensors are put forward.

  9. Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

    DOE PAGES

    Zhang, En Xia; Fleetwood, Daniel M.; Hachtel, Jordan A.; ...

    2016-12-02

    In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small Vth shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices.more » Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.« less

  10. Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

    SciTech Connect

    Zhang, En Xia; Fleetwood, Daniel M.; Hachtel, Jordan A.; Oak Ridge National Lab. , Oak Ridge, TN ; Liang, Chundong; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Linten, Dimitri; Mitard, Jerome; Chisholm, Matthew F.; Pantelides, Sokrates T.; Oak Ridge National Lab. , Oak Ridge, TN

    2016-12-02

    In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small Vth shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

  11. MoS2 memristor with photoresistive switching

    PubMed Central

    Wang, Wei; Panin, Gennady N.; Fu, Xiao; Zhang, Lei; Ilanchezhiyan, P.; Pelenovich, Vasiliy O.; Fu, Dejun; Kang, Tae Won

    2016-01-01

    A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques. PMID:27492593

  12. MOS flat-band capacitance method at low temperatures

    SciTech Connect

    Huang, C.L.; Gildenblat, G.H. . Dept. of Electrical Engineering)

    1989-08-01

    The expression C/sub FB/ = C/sub ox/ x ({element of}/sub si//L/sub D/)/(C/sub ox/ + ({Epsilon}/sub si//L/sub D/)) (where L/sub D/ is the Debye length), commonly used for the flat-band capacitance of the MOS structure, is invalid in the temperature range below 100 {Kappa}. Consequently, significant error may be encountered when the flat-band capacitance method is used to extract the flat-band voltage V/sub FB/, which is of considerable interest for both the modeling and characterization of MOS devices. To extend this method to low-temperature CMOS applications one has to use a more general model that can be obtained by applying Fermi-Dirac statistics and taking into account the impurity freezeout effect. The authors show that when the temperature dependence of V/sub FB/ is extracted using this approach, the experimental data for n/sup +/ polysilicon gate MOS capacitors are in a good agreement with a simple model.

  13. Ambipolar MoS2 thin flake transistors.

    PubMed

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    2012-03-14

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS(2), a member of the transition metal dichalcogenides, an archetypal layered material. The EDLT of the thin flake MoS(2) unambiguously displayed ambipolar operation, in contrast to its commonly known bulk property as an n-type semiconductor. High-performance transistor operation characterized by a large "ON" state conductivity in the order of ~mS and a high on/off ratio >10(2) was realized for both hole and electron transport. Hall effect measurements revealed mobility of 44 and 86 cm(2) V(-1) s(-1) for electron and hole, respectively. The hole mobility is twice the value of the electron mobility, and the density of accumulated carrier reached 1 × 10(14) cm(-2), which is 1 order of magnitude larger than conventional FETs with solid dielectrics. The high-density carriers of both holes and electrons can create metallic transport in the MoS(2) channel. The present result is not only important for device applications with new functionalities, but the method itself would also act as a protocol to study this class of material for a broader scope of possibilities in accessing their unexplored properties.

  14. Markedly different adsorption behaviors of gas molecules on defective monolayer MoS2: a first-principles study.

    PubMed

    Li, Hongxing; Huang, Min; Cao, Gengyu

    2016-06-01

    Sulfur vacancy (SV) is one of the most typical defects in two-dimensional monolayer MoS2, leading to reactive sites. We presented a systematic study of the adsorption behaviors of gas molecules, CO2, N2, H2O, CO, NH3, NO, O2, H2 and NO2, on monolayer MoS2 with single SV by first-principles calculations. It was found that CO2, N2 and H2O molecules physisorbed at the proximity of single SV. Our adsorption energy calculations and charge transfer analysis showed that the interactions between CO2, N2 and H2O molecules and defective MoS2 are stronger than the cases of CO2, N2 and H2O molecules adsorbed on pristine MoS2, respectively. The defective MoS2 based gas sensors may be more sensitive to CO2, N2 and H2O molecules than pristine MoS2 based ones. CO, NO, O2 and NH3 molecules were found to chemisorb at the S vacancy site and thus modify the electronic properties of defective monolayer MoS2. Magnetism was induced upon adsorption of NO molecules and the defective states induced by S vacancy can be completely removed upon adsorption of O2 molecules, which may provide some helpful information for designing new MoS2 based nanoelectronic devices in future. The H2 and NO2 molecules were found to dissociate at S vacancy. The dissociation of NO2 molecules resulted in O atoms located at the S vacancy site and NO molecules physisorbed on O-doped MoS2. The calculated results showed that NO2 molecules can help heal the S vacancy of the MoS2 monolayer.

  15. Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

    PubMed

    Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

    2015-05-13

    Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel.

  16. Direct Synthesis of Crystalline MoS2 Thin Films on Large Area, Stretchable Polymer Surfaces (Preprint)

    DTIC Science & Technology

    2015-05-15

    AFRL-RX-WP-JA-2016-0239 DIRECT SYNTHESIS OF CRYSTALLINE MoS2 THIN FILMS ON LARGE AREA, STRETCHABLE POLYMER SURFACES (PREPRINT...AREA, STRETCHABLE POLYMER SURFACES (PREPRINT) 5a. CONTRACT NUMBER FA8650-11-D-5800-0005 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F...devices on flexible polymer substrates. 15. SUBJECT TERMS MoS2 films, PDMS substrates, photothermal, amorphous material, polymer substrate 16

  17. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  18. Influence of water vapor on the electronic property of MoS2 field effect transistors.

    PubMed

    Shu, Jiapei; Wu, Gongtao; Gao, Song; Liu, Bo; Wei, Xianlong; Chen, Qing

    2017-03-02

    The influence of water vapor on the electronic property of MoS2 field effect transistors (FETs) is studied through controlled experiments. We fabricate supported and suspended FETs on the same piece of MoS2 to figure out the role of SiO2 substrate on the water sensing property of MoS2. The two kinds devices show similar response to water vapor and to different treatments, such as pumping in the vacuum, annealing at 500K and current annealing, indicating the substrate do not play an important role in MoS2 water sensor. Water adsorption is found to decrease the carrier mobility probably through introducing scattering center on the surface of MoS2. The threshold voltage and subthreshold swing of the FETs do not change obviously after introducing water vapor, indicating there is not obvious doping and trap introducing effects. Long time pumping in high vacuum and 500 K annealing show negligible effects on removing the water adsorption on the devices. Current annealing at high source-drain bias is found to be able to remove the water adsorption and set the FETs to their initial states. The mechanism is proposed to be through the hot carriers at high bias.

  19. Tailoring MoS2 Exciton-Plasmon Interaction by Optical Spin-Orbit Coupling.

    PubMed

    Li, Ziwei; Li, Yu; Han, Tianyang; Wang, Xingli; Yu, Ying; Tay, Bengkang; Liu, Zheng; Fang, Zheyu

    2017-02-28

    Molybdenum disulfide (MoS2) monolayer as one of the atomic thickness two-dimensional materials has remarkable electronic and optical properties, which is an ideal candidate for a wide range of optoelectronic applications. However, the atomic monolayer thickness poses a significant challenge in MoS2 photoluminescence emission due to weak light-matter interaction. Here, we investigate the MoS2 exciton-plasmon interaction with spin-orbit coupling of light. The plasmonic spiral rings with subwavelength dimensions are designed and fabricated on hybrid substrates. MoS2 photoluminescence enhancement can be actively controlled by changing the incident optical spin states, laser powers, and the nanospiral geometries, which is arising from the change of field enhancement at near-field region. Planar light-emitting devices based on spin-orbit coupling (SOC) effect were further realized and flexibly controlled by changing the polarization of light. The SOC effect is discussed by the accumulation of geometric and dynamic phases, which can be demonstrated and elaborated by the Majorana sphere model. Our results provide a way to manipulate MoS2 light-matter interaction actively and can be further applied in the spin-dependent light-emitting devices at the nanoscale.

  20. Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition.

    PubMed

    Li, Meng; Liu, Na; Li, Pan; Shi, Jialin; Li, Guangyong; Xi, Ning; Wang, Yuechao; Liu, Lianqing

    2017-03-08

    Transition metal dichalcogenides, particularly MoS2, have recently received enormous interest in explorations of the physics and technology of nanodevice applications because of their excellent optical and electronic properties. Although monolayer MoS2 has been extensively investigated for various possible applications, its difficulty of fabrication renders it less appealing than multilayer MoS2. Moreover, multilayer MoS2, with its inherent high electronic/photonic state densities, has higher output driving capabilities and can better satisfy the ever-increasing demand for versatile devices. Here, we present multilayer MoS2 back-gate thin-film transistors (TFTs) that can achieve a relatively low subthreshold swing of 0.75 V/decade and a high mobility of 41 cm(2)·V(-1)·s(-1), which exceeds the typical mobility value of state-of-the-art amorphous silicon-based TFTs by a factor of 80. Ag and Au electrode-based MoS2 TFTs were fabricated by a convenient and rapid process. Then we performed a detailed analysis of the impacts of metal contacts and MoS2 film thickness on electronic performance. Our findings show that smoother metal contacts exhibit better electronic characteristics and that MoS2 film thickness should be controlled within a reasonable range of 30-40 nm to obtain the best mobility values, thereby providing valuable insights regarding performance enhancement for MoS2 TFTs. Additionally, to overcome the limitations of the conventional fabrication method, we employed a novel approach known as optically induced electrodeposition (OIE), which allows the flexible and precise patterning of metal films and enables rapid and mask-free device fabrication, for TFT fabrication.

  1. Microscopy needs for next generation devices characterization in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Clement, L.; Borowiak, C.; Galand, R.; Lepinay, K.; Lorut, F.; Pantel, R.; Servanton, G.; Thomas, R.; Vannier, P.; Bicais, N.

    2011-11-01

    In this paper we present the different imaging based techniques used in the semiconductor industry to support both manufacturing and R&D platforms at STMicroelectronics. Focus is on fully processed devices characterization from large structure (3DI, Imager sensors) to advanced MOS technologies (28-20 nm). Classical SEM and TEM (mainly EFTEM) based techniques are now commonly used to characterize each step of the semiconductor devices' process flow in terms of morphology and chemical analysis. However to address specific issues, dedicated imaging techniques are currently being investigated. With the "High-k Metal Gate" stack involved in the more advanced MOS devices (28-20 nm), new challenges occur and therefore advanced characterization is mandatory. Some relevant examples are pointed out through (STEM) EELS and EDX experiments. Analysis of stressors mainly used to improve carrier mobility in next generation devices, is also presented with different approaches (NBD, CBED and Dark-field holography). Advanced STEM and AFM based techniques applied to characterize dopants and junction in MOS devices and also in more relaxed structure such as imager sensors is discussed too. Concerning back-end (interconnects) and 3D integration (3DI) issues, focus is on nano-characterization of defects by classical techniques (EFTEM, STEM EELS-EDX) and with dedicated ones still in development. To illustrate this topic some 3D FD3/SEM and E-beam tomography experiments are presented. Examples of microstructure and texture determination in poly-crystalline materials such as copper line by coupling SEM/EBSD and TEM techniques are also shown.

  2. Broad-Band Photocurrent Enhancement in MoS2 Layers Directly Grown on Light-Trapping Si Nanocone Arrays.

    PubMed

    Cho, Yunae; Cho, Byungjin; Kim, Yonghun; Lee, Jihye; Kim, Eunah; Nguyen, Trang Thi Thu; Lee, Ju Hyun; Yoon, Seokhyun; Kim, Dong-Ho; Choi, Jun-Hyuk; Kim, Dong-Wook

    2017-02-22

    There has been growing research interest in realizing optoelectronic devices based on the two-dimensional atomically thin semiconductor MoS2 owing to its distinct physical properties that set it apart from conventional semiconductors. However, there is little optical absorption in these extremely thin MoS2 layers, which presents an obstacle toward applying them for use in high-efficiency light-absorbing devices. We synthesized trilayers of MoS2 directly on SiO2/Si nanocone (NC) arrays using chemical vapor deposition and investigated their photodetection characteristics. The photoresponsivity of the MoS2/NC structure was much higher than that of the flat counterpart across the whole visible wavelength range (for example, it was almost an order of magnitude higher at λ = 532 nm). Strongly concentrated light near the surface that originated from a Fabry-Perot interference in the SiO2 thin layers and a Mie-like resonance caused by the Si NCs boosted the optical absorption in MoS2. Our work demonstrates that MoS2/NC structures could provide a useful means to realize high-performance optoelectronic devices.

  3. The spatial and logical organization of devices in an advanced industrial robot system

    NASA Technical Reports Server (NTRS)

    Ruoff, C. F.

    1980-01-01

    This paper describes the geometrical and device organization of a robot system which is based in part upon transformations of Cartesian frames and exchangeable device tree structures. It discusses coordinate frame transformations, geometrical device representation and solution degeneracy along with the data structures which support the exchangeable logical-physical device assignments. The system, which has been implemented in a minicomputer, supports vision, force, and other sensors. It allows tasks to be instantiated with logically equivalent devices and it allows tasks to be defined relative to appropriate frames. Since these frames are, in turn, defined relative other frames this organization provides a significant simplification in task specification and a high degree of system modularity.

  4. Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

  5. Shielded silicon gate complementary MOS integrated circuit.

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.; Hayes, P. J.

    1972-01-01

    An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

  6. Electrochemical investigations of advanced materials for microelectronic and energy storage devices

    NASA Astrophysics Data System (ADS)

    Goonetilleke, Pubudu Chaminda

    A broad range of electrochemical techniques are employed in this work to study a selected set of advanced materials for applications in microelectronics and energy storage devices. The primary motivation of this study has been to explore the capabilities of certain modern electrochemical techniques in a number of emerging areas of material processing and characterization. The work includes both aqueous and non-aqueous systems, with applications in two rather general areas of technology, namely microelectronics and energy storage. The sub-systems selected for investigation are: (i) Electrochemical mechanical and chemical mechanical planarization (ECMP and CMP, respectively), (ii) Carbon nanotubes in combination with room temperature ionic liquids (ILs), and (iii) Cathode materials for high-performance Li ion batteries. The first group of systems represents an important building block in the fabrication of microelectronic devices. The second and third groups of systems are relevant for new energy storage technologies, and have generated immense interests in recent years. A common feature of these different systems is that they all are associated with complex surface reactions that dictate the performance of the devices based on them. Fundamental understanding of these reactions is crucial to further development and expansion of their associated technologies. It is the complex mechanistic details of these surface reactions that we address using a judicious combination of a number of state of the art electrochemical techniques. The main electrochemical techniques used in this work include: (i) Cyclic voltammetry (CV) and slow scan cyclic voltammetry (SSCV, a special case of CV); (ii) Galvanostatic (or current-controlled) measurements; (iii) Electrochemical impedance spectroscopy (EIS), based on two different methodologies, namely, Fourier transform EIS (FT-EIS, capable of studying fast reaction kinetics in a time-resolved mode), and EIS using frequency response

  7. Experimental investigation of a double-diffused MOS structure

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.

    1976-01-01

    Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

  8. Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium

    NASA Astrophysics Data System (ADS)

    Meng, Miaofei; Ma, Xiying

    2016-11-01

    We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage ( I- V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

  9. Enhanced charge separation at 2D MoS2/ZnS heterojunction: KPFM based study of interface photovoltage

    NASA Astrophysics Data System (ADS)

    Sharma, Intu; Mehta, B. R.

    2017-02-01

    Two dimensional (2D) MoS2/ZnS heterojunctions with MoS2 thickness varying from monolayer to bulk have been prepared by sulfurization of a controlled thickness of Mo deposited on the ZnS thin films. Kelvin probe force microscopy measurements on MoS2/ZnS junction having varying thicknesses of MoS2 layers are carried out in the surface and junction modes, under white light exposure. Differences in the surface potential values of the surface and junction modes represent interface photovoltages at heterojunctions. Enhanced interface photovoltage is observed in junctions having the mono and few layer MoS2 in comparison to bulk MoS2 layer. This suggests the active participation of 2D MoS2 layer in photon absorption and charge separation processes taking place close to the junction. The present study is an effort towards the integration of 2D layered materials with 3D semiconductors, which may be advantageous for the development of 2D material based optoelectronic devices.

  10. Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing.

    PubMed

    Zhang, Dongzhi; Sun, Yan'e; Li, Peng; Zhang, Yong

    2016-06-08

    An ultrasensitive humidity sensor based on molybdenum-disulfide- (MoS2)-modified tin oxide (SnO2) nanocomposite has been demonstrated in this work. The nanostructural, morphological, and compositional properties of an as-prepared MoS2/SnO2 nanocomposite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectrometry (EDS), nitrogen sorption analysis, and Raman spectroscopy, which confirmed its successful preparation and rationality. The sensing characteristics of the MoS2/SnO2 hybrid film device against relative humidity (RH) were investigated at room temperature. The RH sensing results revealed an unprecedented response, ultrafast response/recovery behaviors, and outstanding repeatability. To our knowledge, the sensor response yielded in this work was tens of times higher than that of the existing humidity sensors. Moreover, the MoS2/SnO2 hybrid nanocomposite film sensor exhibited great enhancement in humidity sensing performances as compared to the pure MoS2, SnO2, and graphene counterparts. Furthermore, complex impedance spectroscopy and bode plots were employed to understand the underlying sensing mechanisms of the MoS2/SnO2 nanocomposite toward humidity. The synthesized MoS2/SnO2 hybrid composite was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications.

  11. Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium.

    PubMed

    Meng, Miaofei; Ma, Xiying

    2016-12-01

    We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

  12. Detecting Nano-Scale Vibrations in Rotating Devices by Using Advanced Computational Methods

    PubMed Central

    del Toro, Raúl M.; Haber, Rodolfo E.; Schmittdiel, Michael C.

    2010-01-01

    This paper presents a computational method for detecting vibrations related to eccentricity in ultra precision rotation devices used for nano-scale manufacturing. The vibration is indirectly measured via a frequency domain analysis of the signal from a piezoelectric sensor attached to the stationary component of the rotating device. The algorithm searches for particular harmonic sequences associated with the eccentricity of the device rotation axis. The detected sequence is quantified and serves as input to a regression model that estimates the eccentricity. A case study presents the application of the computational algorithm during precision manufacturing processes. PMID:22399918

  13. Prediction of electronic structure of van der Waals interfaces: Benzene adsorbed monolayer MoS2, WS2 and WTe2

    NASA Astrophysics Data System (ADS)

    You, Baiqing; Wang, Xiaocha; Chen, Guifeng; Zheng, Zhida

    2017-04-01

    The electronic structure of benzene adsorbed monolayer MoS2, WS2 and WTe2 has been investigated by first-principles calculations with van der Waals forces. The benzene adsorbed monolayer MoS2, WS2 and WTe2 with spin-orbital coupling are found to be direct-band-gap semiconductors. All the benzene adsorbed model show the semiconducting characteristic. The band gap and spin splitting of the benzene adsorbed monolayer MoS2, WS2 and WTe2 are slightly regulated. The calculated results show the potential applications in the optoelectronic devices, spin-filter devices, etc.

  14. Electrical and electronic devices and components: A compilation

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

  15. Advanced biosensing methodologies developed for evaluating performance quality and safety of emerging biophotonics technologies and medical devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Ilev, Ilko K.; Walker, Bennett; Calhoun, William; Hassan, Moinuddin

    2016-03-01

    Biophotonics is an emerging field in modern biomedical technology that has opened up new horizons for transfer of state-of-the-art techniques from the areas of lasers, fiber optics and biomedical optics to the life sciences and medicine. This field continues to vastly expand with advanced developments across the entire spectrum of biomedical applications ranging from fundamental "bench" laboratory studies to clinical patient "bedside" diagnostics and therapeutics. However, in order to translate these technologies to clinical device applications, the scientific and industrial community, and FDA are facing the requirement for a thorough evaluation and review of laser radiation safety and efficacy concerns. In many cases, however, the review process is complicated due the lack of effective means and standard test methods to precisely analyze safety and effectiveness of some of the newly developed biophotonics techniques and devices. There is, therefore, an immediate public health need for new test protocols, guidance documents and standard test methods to precisely evaluate fundamental characteristics, performance quality and safety of these technologies and devices. Here, we will overview our recent developments of novel test methodologies for safety and efficacy evaluation of some emerging biophotonics technologies and medical devices. These methodologies are based on integrating the advanced features of state-of-the-art optical sensor technologies and approaches such as high-resolution fiber-optic sensing, confocal and optical coherence tomography imaging, and infrared spectroscopy. The presentation will also illustrate some methodologies developed and implemented for testing intraocular lens implants, biochemical contaminations of medical devices, ultrahigh-resolution nanoscopy, and femtosecond laser therapeutics.

  16. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    NASA Astrophysics Data System (ADS)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  17. Performance of a Water Recirculation Loop Maintenance Device and Process for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Rector, Tony; Steele, John W.; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2012-01-01

    A water loop maintenance device and process to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been undergoing a performance evaluation. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the water recirculation maintenance device and process is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The maintenance process further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware. This

  18. Design and Evaluation of a Water Recirculation Loop Maintenance Device for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2011-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The bed design further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a clear demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware.

  19. Design and Evaluation of a Water Recirculation Loop Maintenance Device for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2012-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high-capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit Transport Water Loop. The bed design further leverages a sorbent developed for the ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System. The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of crewed spaceflight Environmental Control and Life Support System hardware.

  20. Performance of a Water Recirculation Loop Maintenance Device and Process for the Advanced Spacesuit Water Membrane Evaporator

    NASA Technical Reports Server (NTRS)

    Steele, John W.; Rector, Tony; Bue, Grant C.; Campbell, Colin; Makinen, Janice

    2013-01-01

    A dual-bed device to maintain the water quality of the Advanced Spacesuit Water Membrane Evaporation (SWME) water recirculation loop has been designed and is undergoing testing. The SWME is a heat rejection device under development at the NASA Johnson Space Center to perform thermal control for advanced spacesuits. One advantage to this technology is the potential for a significantly greater degree of tolerance to contamination when compared to the existing Sublimator technology. The driver for the development of a water recirculation maintenance device is to further enhance this advantage through the leveraging of fluid loop management lessons-learned from the International Space Station (ISS). A bed design that was developed for a Hamilton Sundstrand military application, and considered for a potential ISS application with the Urine Processor Assembly, provides a low pressure drop means for water maintenance in a recirculation loop. The bed design is coupled with high capacity ion exchange resins, organic adsorbents, and a cyclic methodology developed for the Extravehicular Mobility Unit (EMU) Transport Water loop. The bed design further leverages a sorbent developed for ISS that introduces a biocide in a microgravity-compatible manner for the Internal Active Thermal Control System (IATCS). The leveraging of these water maintenance technologies to the SWME recirculation loop is a unique demonstration of applying the valuable lessons learned on the ISS to the next generation of manned spaceflight Environmental Control and Life Support System (ECLSS) hardware.

  1. Functional imaging using computational fluid dynamics to predict treatment success of mandibular advancement devices in sleep-disordered breathing.

    PubMed

    De Backer, J W; Vanderveken, O M; Vos, W G; Devolder, A; Verhulst, S L; Verbraecken, J A; Parizel, P M; Braem, M J; Van de Heyning, P H; De Backer, W A

    2007-01-01

    Mandibular advancement devices (MADs) have emerged as a popular alternative for the treatment of sleep-disordered breathing. These devices bring the mandibula forward in order to increase upper airway (UA) volume and prevent total UA collapse during sleep. However, the precise mechanism of action appears to be quite complex and is not yet completely understood; this might explain interindividual variation in treatment success. We examined whether an UA model, that combines imaging techniques and computational fluid dynamics (CFD), allows for a prediction of the treatment outcome with MADs. Ten patients that were treated with a custom-made mandibular advancement device (MAD), underwent split-night polysomnography. The morning after the sleep study, a low radiation dose CT scan was scheduled with and without the MAD. The CT examinations allowed for a comparison between the change in UA volume and the anatomical characteristics through the conversion to three-dimensional computer models. Furthermore, the change in UA resistance could be calculated through flow simulations with CFD. Boundary conditions for the model such as mass flow rate and pressure distributions were obtained during the split-night polysomnography. Therefore, the flow modeling was based on a patient specific geometry and patient specific boundary conditions. The results indicated that a decrease in UA resistance and an increase in UA volume correlate with both a clinical and an objective improvement. The results of this pilot study suggest that the outcome of MAD treatment can be predicted using the described UA model.

  2. Tunneling in thin MOS structures

    NASA Technical Reports Server (NTRS)

    Maserjian, J.

    1974-01-01

    Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

  3. One-Step Hydrothermal Fabrication of Three-dimensional MoS2 Nanoflower using Polypyrrole as Template for Efficient Hydrogen Evolution Reaction.

    PubMed

    Lu, Xin; Lin, Yingwu; Dong, Haifeng; Dai, Wenhao; Chen, Xin; Qu, Xuanhui; Zhang, Xueji

    2017-02-14

    Herein, a facile and cost-effective strategy for hydrothermal synthesis of three-dimensional (3D) MoS2 with adequate active edge sites and advanced hydrogen evolution reaction (HER) performance using polypyrrole (PPy) as template is reported. The MoS2 is first thermally nucleated using hexaammonium heptamolybdate tetrahydrate (NH4)6Mo7O24·4H2O and thiourea as precursor in the presence of PPy, and then they are further annealed to remove PPy at higher temperature to generate 3D MoS2-P. Morphology and composition characterizations reveal that the 3D MoS2-P exhibits a nanoflower morphology. It presents larger stretched "thin folding leaves" and higher mesoporous volume of 0.608 cm(3) g(-1) than the MoS2 without PPy as template. Importantly, the 3D MoS2-P shows enhanced HER catalytic activity (onset potential at -100 mV) than previously reports that MoS2-based HER catalysts. The large "thin folding leaves" possessing efficient edge active sites and defects are responsible to for the enhanced HER performance, while the high mesoporous volume facilitates the transfer of reaction substrate. Our study provides a facile and cost-effective method for synthesis of 3D MoS2 with advanced HER performances, which has great potential for larger-scale production and practical industrial applications.

  4. One-Step Hydrothermal Fabrication of Three-dimensional MoS2 Nanoflower using Polypyrrole as Template for Efficient Hydrogen Evolution Reaction

    PubMed Central

    Lu, Xin; Lin, Yingwu; Dong, Haifeng; Dai, Wenhao; Chen, Xin; Qu, Xuanhui; Zhang, Xueji

    2017-01-01

    Herein, a facile and cost-effective strategy for hydrothermal synthesis of three-dimensional (3D) MoS2 with adequate active edge sites and advanced hydrogen evolution reaction (HER) performance using polypyrrole (PPy) as template is reported. The MoS2 is first thermally nucleated using hexaammonium heptamolybdate tetrahydrate (NH4)6Mo7O24·4H2O and thiourea as precursor in the presence of PPy, and then they are further annealed to remove PPy at higher temperature to generate 3D MoS2-P. Morphology and composition characterizations reveal that the 3D MoS2-P exhibits a nanoflower morphology. It presents larger stretched “thin folding leaves” and higher mesoporous volume of 0.608 cm3 g−1 than the MoS2 without PPy as template. Importantly, the 3D MoS2-P shows enhanced HER catalytic activity (onset potential at −100 mV) than previously reports that MoS2-based HER catalysts. The large “thin folding leaves” possessing efficient edge active sites and defects are responsible to for the enhanced HER performance, while the high mesoporous volume facilitates the transfer of reaction substrate. Our study provides a facile and cost-effective method for synthesis of 3D MoS2 with advanced HER performances, which has great potential for larger-scale production and practical industrial applications. PMID:28195126

  5. One-Step Hydrothermal Fabrication of Three-dimensional MoS2 Nanoflower using Polypyrrole as Template for Efficient Hydrogen Evolution Reaction

    NASA Astrophysics Data System (ADS)

    Lu, Xin; Lin, Yingwu; Dong, Haifeng; Dai, Wenhao; Chen, Xin; Qu, Xuanhui; Zhang, Xueji

    2017-02-01

    Herein, a facile and cost-effective strategy for hydrothermal synthesis of three-dimensional (3D) MoS2 with adequate active edge sites and advanced hydrogen evolution reaction (HER) performance using polypyrrole (PPy) as template is reported. The MoS2 is first thermally nucleated using hexaammonium heptamolybdate tetrahydrate (NH4)6Mo7O24·4H2O and thiourea as precursor in the presence of PPy, and then they are further annealed to remove PPy at higher temperature to generate 3D MoS2-P. Morphology and composition characterizations reveal that the 3D MoS2-P exhibits a nanoflower morphology. It presents larger stretched “thin folding leaves” and higher mesoporous volume of 0.608 cm3 g‑1 than the MoS2 without PPy as template. Importantly, the 3D MoS2-P shows enhanced HER catalytic activity (onset potential at ‑100 mV) than previously reports that MoS2-based HER catalysts. The large “thin folding leaves” possessing efficient edge active sites and defects are responsible to for the enhanced HER performance, while the high mesoporous volume facilitates the transfer of reaction substrate. Our study provides a facile and cost-effective method for synthesis of 3D MoS2 with advanced HER performances, which has great potential for larger-scale production and practical industrial applications.

  6. ESD protection design for advanced CMOS

    NASA Astrophysics Data System (ADS)

    Huang, Jin B.; Wang, Gewen

    2001-10-01

    ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

  7. Mechanically delaminated few layered MoS2 nanosheets based high performance wire type solid-state symmetric supercapacitors

    NASA Astrophysics Data System (ADS)

    Krishnamoorthy, Karthikeyan; Pazhamalai, Parthiban; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

    2016-07-01

    Two dimensional nanostructures are increasingly used as electrode materials in flexible supercapacitors for portable electronic applications. Herein, we demonstrated a ball milling approach for achieving few layered molybdenum disulfide (MoS2) via exfoliation from their bulk. Physico-chemical characterizations such as X-ray diffraction, field emission scanning electron microscope, and laser Raman analyses confirmed the occurrence of exfoliated MoS2 sheets with few layers from their bulk via ball milling process. MoS2 based wire type solid state supercapacitors (WSCs) are fabricated and examined using cyclic voltammetry (CV), electrochemical impedance spectroscopy, and galvanostatic charge discharge (CD) measurements. The presence of rectangular shaped CV curves and symmetric triangular shaped CD profiles suggested the mechanism of charge storage in MoS2 WSC is due to the formation of electrochemical double layer capacitance. The MoS2 WSC device delivered a specific capacitance of 119 μF cm-1, and energy density of 8.1 nW h cm-1 with better capacitance retention of about 89.36% over 2500 cycles, which ensures the use of the ball milled MoS2 for electrochemical energy storage devices.

  8. Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films

    PubMed Central

    Yu, Yifei; Li, Chun; Liu, Yi; Su, Liqin; Zhang, Yong; Cao, Linyou

    2013-01-01

    Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields including field effect transistors, low power switches, optoelectronics, and spintronics. However, device development with 2D MoS2 has been delayed by the lack of capabilities to produce large-area, uniform, and high-quality MoS2 monolayers. Here we present a self-limiting approach that can grow high quality monolayer and few-layer MoS2 films over an area of centimeters with unprecedented uniformity and controllability. This approach is compatible with the standard fabrication process in semiconductor industry. It paves the way for the development of practical devices with 2D MoS2 and opens up new avenues for fundamental research. PMID:23689610

  9. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.

    PubMed

    Lin, Yu-Kai; Chen, Ruei-San; Chou, Tsu-Chin; Lee, Yi-Hsin; Chen, Yang-Fang; Chen, Kuei-Hsien; Chen, Li-Chyong

    2016-08-31

    The thickness-dependent surface states of MoS2 thin films grown by the chemical vapor deposition process on the SiO2-Si substrates are investigated by X-ray photoelectron spectroscopy. Raman and high-resolution transmission electron microscopy suggest the thicknesses of MoS2 films to be ranging from 3 to 10 layers. Both the core levels and valence band edges of MoS2 shift downward ∼0.2 eV as the film thickness increases, which can be ascribed to the Fermi level variations resulting from the surface states and bulk defects. Grainy features observed from the atomic force microscopy topographies, and sulfur-vacancy-induced defect states illustrated at the valence band spectra imply the generation of surface states that causes the downward band bending at the n-type MoS2 surface. Bulk defects in thick MoS2 may also influence the Fermi level oppositely compared to the surface states. When Au contacts with our MoS2 thin films, the Fermi level downshifts and the binding energy reduces due to the hole-doping characteristics of Au and easy charge transfer from the surface defect sites of MoS2. The shift of the onset potentials in hydrogen evolution reaction and the evolution of charge-transfer resistances extracted from the impedance measurement also indicate the Fermi level varies with MoS2 film thickness. The tunable Fermi level and the high chemical stability make our MoS2 a potential catalyst. The observed thickness-dependent properties can also be applied to other transition-metal dichalcogenides (TMDs), and facilitates the development in the low-dimensional electronic devices and catalysts.

  10. On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study

    NASA Astrophysics Data System (ADS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Luisier, Mathieu; Radu, Iuliana P.; Houssa, Michel

    2017-01-01

    In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel.

  11. Low-Temperature Atomic Layer Deposition of MoS2 Films.

    PubMed

    Jurca, Titel; Moody, Michael J; Henning, Alex; Emery, Jonathan D; Wang, Binghao; Tan, Jeffrey M; Lohr, Tracy L; Lauhon, Lincoln J; Marks, Tobin J

    2017-04-03

    Wet chemical screening reveals the very high reactivity of Mo(NMe2 )4 with H2 S for the low-temperature synthesis of MoS2 . This observation motivated an investigation of Mo(NMe2 )4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2 )4 enables MoS2 film growth at record low temperatures-as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

  12. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    NASA Astrophysics Data System (ADS)

    Hong, Young Ki; Yoo, Geonwook; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Yoo, Byungwook; Ju, Sanghyun; Kim, Sunkook; Oh, Min Suk

    2016-05-01

    Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  13. Ionic-Liquid Gated Bilayer MoS2 Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Madusanka Perera, Meeghage; Chuang, Hsun-Jen; Lin, Ming-Wei; Chamlagain, Bhim; Tan, Xuebin; Ming-Cheng Cheng, Mark; Zhou, Zhixian

    2012-10-01

    We report the electrical characterization of ionic-liquid-gated bilayer MoS2 field-effect transistors. An On-Off current ratio greater than 10^6 is achieved for hole transport, while that for electron transport exceeds 10^8. The subthreshold swing of our bilayer MoS2 devices reaches as low as 47 mV/dec at 230 K, approaching the theoretical limit. We also demonstrate that 1) the extrinsic mobility of back-gated MoS2 field-effect transistors is largely limited by the contact resistance; and 2) the extremely large electrical-double-layer capacitance of ionic liquid significantly reduces the Schottky contact barrier leading up to three orders of magnitude mobility increase for electron transport.

  14. Electronic Structure and Luminescence of Quasi-Freestanding MoS2 Nanopatches on Au(111)

    PubMed Central

    2016-01-01

    Monolayers of transition metal dichalcogenides are interesting materials for optoelectronic devices due to their direct electronic band gaps in the visible spectral range. Here, we grow single layers of MoS2 on Au(111) and find that nanometer-sized patches exhibit an electronic structure similar to their freestanding analogue. We ascribe the electronic decoupling from the Au substrate to the incorporation of vacancy islands underneath the intact MoS2 layer. Excitation of the patches by electrons from the tip of a scanning tunneling microscope leads to luminescence of the MoS2 junction and reflects the one-electron band structure of the quasi-freestanding layer. PMID:27459588

  15. Nanostructured MoS2 Nanorose/Graphene Nanoplatelet Hybrids for Electrocatalysis.

    PubMed

    Chua, Chun Kiang; Loo, Adeline Huiling; Pumera, Martin

    2016-04-18

    Tailoring and enhancing electrocatalytic activity is of the utmost importance from the viewpoints of sustainable energy and sensing. MoS2 and graphene show great promise for the electrocatalysis of many reactions. Given that both graphene and MoS2 are highly anisotropic in nature, with edge planes that are several orders of magnitude more catalytically active than basal planes, a new hybrid material with maximized edge-plane density to provide efficient electron transfer, high catalytic activity, and conductive cores was engineered. The hybrid material consists of radial MoS2 nanosheets with a high density of edge planes and unsaturated active sulfur atoms as well as interspersed with conductive graphene nanoplatelets. This hybrid material exhibits excellent activity for the hydrogen evolution reaction and the detection of DNA nucleobases. Such a nanoengineered, nanostructured hybrid material may play a major role in future electrocatalytic devices.

  16. Cosmic ray-induced soft errors in static MOS memory cells

    NASA Technical Reports Server (NTRS)

    Sivo, L. L.; Peden, J. C.; Brettschneider, M.; Price, W.; Pentecost, P.

    1979-01-01

    Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

  17. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    SciTech Connect

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  18. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

    PubMed Central

    Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

    2009-01-01

    In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

  19. Doping induces large variation in the electrical properties of MoS2 monolayers

    NASA Astrophysics Data System (ADS)

    Eshun, Kwesi; Xiong, Hao D.; Yu, Sheng; Li, Qiliang

    2015-04-01

    As the devices are being shrunk into nanoscale, it is increasingly difficult, if not impossible, to precisely control the dopant position and number in low-dimensional nanomaterials. In this work, we have investigated doping effect on the electrical properties of n-type and p-type MoS2 monolayer, one of the representative two-dimensional layered semiconductors. We found that the sheet resistance of a nanoscale MoS2 monolayer exhibited large variation (>35%) as the dopant number or position changes, although the variation in band gap is relatively small. The variation increases as the size of MoS2 monolayer decreases. This variation in the doped MoS2 monolayer nanoribbons seems inevitable and will cause significant device-to-device variation that the integrated circuit cannot tolerate. This study also suggests that these two-dimensional semiconductors should be protected from unintentional or intentional doping if they are used in the transistors in future integrated circuits.

  20. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

    PubMed Central

    Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K.; Rinzan, Mohamed; Liu, Amy Y.; Paranjape, Makarand; Barbara, Paola

    2013-01-01

    Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect. PMID:23567328

  1. Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

    PubMed

    Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

    2014-05-27

    Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

  2. Low Power Monolayer MoS2 Transistors for RF Applications

    DTIC Science & Technology

    2015-03-24

    nm gate length Lg devices. A new process has been developed for wafer scale MoS2 fabrication using sulfurization of ultra thin deposited Mo films...device development, a novel wafer scale process was developed in parallel using large area Mo deposition followed by sulfurization at high...SiO 2 /Si and Si 3 N 4 /Si substrates were prepared by the sulfurization of MoO 3 in alumina crucibles placed inside a quartz tube. The temperature

  3. Burnout Thresholds and Cross Section of Power MOS Transistors with Heavy Ions

    DTIC Science & Technology

    1990-02-01

    device -- regardless of manufacturer and device type. Tests performed with fission particles of Californium -252 indicated this to be indeed a...supported by Californium -252 test results. Fission particles of Cf-252 have a maximum range between 12 and 15 Am in silicon and decrease in LET with...Groninger, V, H. Strahan, and D. M. Long, "Burnout of Power MOS Transistors with Heavy Ions of Californium - 252," IEEE Trans. Nuc. Sci., NS-33, pp

  4. Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

    PubMed Central

    Lee, Kevin C. J.; Chen, Yi-Huan; Lin, Hsiang-Yu; Cheng, Chia-Chin; Chen, Pei-Ying; Wu, Ting-Yi; Shih, Min-Hsiung; Wei, Kung-Hwa; Li, Lain-Jong; Chang, Chien-Wen

    2015-01-01

    The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems. PMID:26576041

  5. Development, Field Test, and Refinement of Performance Training Programs in Armor Advanced Individual Training. Final Report.

    ERIC Educational Resources Information Center

    Young, Douglas L.; Taylor, John E.

    Performance-oriented instruction was developed, field tested, and refined in two Advanced Individual Training (AIT) programs--Armor Reconnaissance Specialist (MOS 11D) and Armor Crewman (MOS 11E). Tasks for both MOS (Military Occupational Specialty) were inventoried and the inventories were reduced by eliminating those tasks which are not required…

  6. Electrical control of the valley Hall effect in bilayer MoS2 transistors.

    PubMed

    Lee, Jieun; Mak, Kin Fai; Shan, Jie

    2016-05-01

    The valley degree of freedom of electrons in solids has been proposed as a new type of information carrier, beyond the electron charge and spin. The potential of two-dimensional semiconductor transition metal dichalcogenides in valley-based electronic and optoelectronic applications has recently been illustrated through experimental demonstrations of the optical orientation of the valley polarization and of the valley Hall effect in monolayer MoS2. However, the valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, cannot be easily tuned, which presents a challenge for the development of valley-based applications. Here, we show that the valley Hall effect in bilayer MoS2 transistors can be controlled with a gate voltage. The gate applies an electric field perpendicular to the plane of the material, breaking the inversion symmetry present in bilayer MoS2. The valley polarization induced by the longitudinal electrical current was imaged with Kerr rotation microscopy. The polarization was found to be present only near the edges of the device channel with opposite sign for the two edges, and was out-of-plane and strongly dependent on the gate voltage. Our observations are consistent with symmetry-dependent Berry curvature and valley Hall conductivity in bilayer MoS2.

  7. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fathipour, S.; Remskar, M.; Varlec, A.; Ajoy, A.; Yan, R.; Vishwanath, S.; Rouvimov, S.; Hwang, W. S.; Xing, H. G.; Jena, D.; Seabaugh, A.

    2015-01-01

    We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements, allowing the estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 103, and with current densities of 1.02 μA/μm and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.

  8. Controlled formation of nanostructures on MoS2 layers by focused laser irradiation

    NASA Astrophysics Data System (ADS)

    Rani, Renu; Dimple, Jena, Nityasagar; Kundu, Anirban; Sarkar, Abir De; Hazra, Kiran Shankar

    2017-02-01

    MoS2 nanostructures, i.e., nanoribbons, nano-mesh, etc., may open different prospect of applications in nano-electronic and opto-electronic devices and sensors. However, the fabrication of these complicated nanostructures can be executed by using standard nano-patterning techniques such as lithography, printing, etc. Nevertheless, these standard techniques involve affluent multistep processes to optimize scalability, form factors and accuracy in the feature size. Herein, we demonstrate the fabrication of unique nano-structures on MoS2, such as nano-ribbons and nano-mesh, by a simple one-step process of direct laser writing using 532 nm low power focused laser. The minimum power required to etch a MoS2 layer for a 532 nm laser is found to be ˜6.95 mW and the minimum void size observed is ˜300 nm, which is very close to the diffraction limit of the laser used. Both the experimental and computational results have shown that the voids induced by laser etching always take a hexagonal or triangular shape, which can be used to define crystal orientation of the MoS2 flake. Investigation shows that the periphery of hexagonal voids lies on S atoms, whereas for triangular voids, it lies on Mo atoms of the MoS2 crystal. In-depth AFM and Raman analysis show that the etching rate is tunable by controlling the laser power and the exposure time.

  9. Single-layer MoS2 nanopores as nanopower generators

    NASA Astrophysics Data System (ADS)

    Feng, Jiandong; Graf, Michael; Liu, Ke; Ovchinnikov, Dmitry; Dumcenco, Dumitru; Heiranian, Mohammad; Nandigana, Vishal; Aluru, Narayana R.; Kis, Andras; Radenovic, Aleksandra

    2016-08-01

    Making use of the osmotic pressure difference between fresh water and seawater is an attractive, renewable and clean way to generate power and is known as ‘blue energy’. Another electrokinetic phenomenon, called the streaming potential, occurs when an electrolyte is driven through narrow pores either by a pressure gradient or by an osmotic potential resulting from a salt concentration gradient. For this task, membranes made of two-dimensional materials are expected to be the most efficient, because water transport through a membrane scales inversely with membrane thickness. Here we demonstrate the use of single-layer molybdenum disulfide (MoS2) nanopores as osmotic nanopower generators. We observe a large, osmotically induced current produced from a salt gradient with an estimated power density of up to 106 watts per square metre—a current that can be attributed mainly to the atomically thin membrane of MoS2. Low power requirements for nanoelectronic and optoelectric devices can be provided by a neighbouring nanogenerator that harvests energy from the local environment—for example, a piezoelectric zinc oxide nanowire array or single-layer MoS2 (ref. 12). We use our MoS2 nanopore generator to power a MoS2 transistor, thus demonstrating a self-powered nanosystem.

  10. [Advances on enzymes and enzyme inhibitors research based on microfluidic devices].

    PubMed

    Hou, Feng-Hua; Ye, Jian-Qing; Chen, Zuan-Guang; Cheng, Zhi-Yi

    2010-06-01

    With the continuous development in microfluidic fabrication technology, microfluidic analysis has evolved from a concept to one of research frontiers in last twenty years. The research of enzymes and enzyme inhibitors based on microfluidic devices has also made great progress. Microfluidic technology improved greatly the analytical performance of the research of enzymes and enzyme inhibitors by reducing the consumption of reagents, decreasing the analysis time, and developing automation. This review focuses on the development and classification of enzymes and enzyme inhibitors research based on microfluidic devices.

  11. Advances in microbial biofilm prevention on indwelling medical devices with emphasis on usage of acoustic energy.

    PubMed

    Dror, Naama; Mandel, Mathilda; Hazan, Zadik; Lavie, Gad

    2009-01-01

    Microbial biofilms are a major impediment to the use of indwelling medical devices, generating device-related infections with high morbidity and mortality. Major efforts directed towards preventing and eradicating the biofilm problem face difficulties because biofilms protect themselves very effectively by producing a polysaccharide coating, reducing biofilm sensitivity to antimicrobial agents. Techniques applied to combating biofilms have been primarily chemical. These have met with partial and limited success rates, leading to current trends of eradicating biofilms through physico-mechanical strategies. Here we review the different approaches that have been developed to control biofilm formation and removal, focusing on the utilization of acoustic energy to achieve these objectives.

  12. Reversible Motor Paralysis and Early Cardiac Rehabilitation in Patients With Advanced Heart Failure Receiving Left Ventricular Assist Device Therapy.

    PubMed

    Amao, Rie; Imamura, Teruhiko; Nakahara, Yasuo; Noguchi, Satoko; Kinoshita, Osamu; Yamauchi, Haruo; Ono, Minoru; Haga, Nobuhiko

    2016-12-02

    Advanced heart failure (HF) is sometimes complicated with brain impairment because of a microthrombosis caused by decreased left ventricular contraction or reduced brain circulation. Some patients may recover after left ventricular assist device (LVAD) implantation. However, little is known about the perioperative therapeutic strategy in patients suffering from such complications, particularly from a cardiac rehabilitation viewpoint. We report on a 58-year-old male patient with a previous history of poliomyelitis and a light paralysis in the left upper extremity, who suffered left hemiplegia with no evidence of stroke after hemodynamic deterioration. The combination therapy of perioperative cardiac rehabilitation and LVAD therapy improved his left hemiplegia as well as activities of daily living, and the patient was discharged on foot on postoperative day 72 after briefing the family on LVAD home management. Early initiation of cardiac rehabilitation before LVAD implantation may be a key for the smooth discharge and resocialization of patients suffering from brain impairment complicated with advanced HF.

  13. Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

    NASA Astrophysics Data System (ADS)

    Fang, Nan; Nagashio, Kosuke; Toriumi, Akira

    2017-03-01

    Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices unstable and problematic. Random telegraphic signals (RTSs) have often been studied in small area Si metal-oxide-semiconductor field-effect transistors (MOSFETs) to identify the carrier capture and emission processes at defects. In this paper, we have systemically analyzed RTSs observed in atomically thin layer MoS2 FETs. Several types of RTSs have been analyzed. One is the simple on/off type of telegraphic signals, the second is multilevel telegraphic signals with a superposition of the simple signals, and the third is multilevel telegraphic signals that are correlated with each other. The last one is discussed from the viewpoint of the defect-defect interaction in MoS2 FETs with a weak screening in atomically confined two-dimensional electron-gas systems. Furthermore, the position of defects causing RTSs has also been investigated by preparing MoS2 FETs with multi-probes. The electron beam was locally irradiated to intentionally generate defects in the MoS2 channel. It is clearly demonstrated that the MoS2 channel is one of the RTS origins. RTS analysis enables us to analyze the defect dynamics of TMD devices.

  14. Controlling magnetism of MoS2 sheets by embedding transition-metal atoms and applying strain.

    PubMed

    Zhou, Yungang; Su, Qiulei; Wang, Zhiguo; Deng, Huiqiu; Zu, Xiaotao

    2013-11-14

    Prompted by recent experimental achievement of transition metal (TM) atoms substituted in MoS2 nanostructures during growth or saturating existing vacancies (Sun et al., ACS Nano, 2013, 7, 3506; Deepak et al., J. Am. Chem. Soc., 2007, 129, 12549), we explored, via density functional theory, the magnetic properties of a series of 3d TM atoms substituted in a MoS2 sheet, and found that Mn, Fe, Co, Ni, Cu and Zn substitutions can induce magnetism in the MoS2 sheet. The localizing unpaired 3d electrons of TM atoms respond to the introduction of a magnetic moment. Depending on the species of TM atoms, the substituted MoS2 sheet can be a metal, semiconductor or half-metal. Remarkably, the applied elastic strain can be used to control the strength of the spin-splitting of TM-3d orbitals, leading to an effective manipulation of the magnetism of the TM-substituted MoS2 sheet. We found that the magnetic moment of the Mn- and Fe-substituted MoS2 sheets can monotonously increase with the increase of tensile strain, while the magnetic moment of Co-, Ni-, Cu- and Zn-substituted MoS2 sheets initially increases and then decreases with the increase of tensile strain. An instructive mechanism was proposed to qualitatively explain the variation of magnetism with elastic strain. The finding of the magnetoelastic effect here is technologically important for the fabrication of strain-driven spin devices on MoS2 nanostructures, which allows us to go beyond the current scope limited to the spin devices within graphene and BN-based nanostructures.

  15. Efficacy of mandibular advancement device in the treatment of obstructive sleep apnea syndrome: A randomized controlled crossover clinical trial

    PubMed Central

    Crovetto-Martínez, Rafael; Alkhraisat, Mohammad-Hamdan; Crovetto, Miguel; Municio, Antonio; Kutz, Ramón; Aizpuru, Felipe; Miranda, Erika; Anitua, Eduardo

    2015-01-01

    Background Evaluation of the efficacy and safety of a mandibular advancement device (MAD) (KlearwayTM) in the treatment of mild-to-moderate obstructive sleep apnea and chronic roncopathy. Material and Methods A randomized, placebo-controlled, double blinded, and crossover clinical trial was conducted. Placebo device (PD) defined as a splint in the centric occlusion that did not induce a mandibular advancement served as a control. The mandible was advanced to the maximum tolerable distance or to a minimum of 65% of the maximum protrusion. After each sequence of treatment, patients were assessed by questionnaires, conventional polysomnography, and objective measurement of snoring at the patient’s own home. Results Forty two patients participated in the study and 38 completed the study. Patients mean age was 46 ±9 years and the 79% were males. The mean mandibular advancement was 8.6 ±2.8 mm. Patients used the MAD and the PD for 6.4 +2.4 hours and 6.2 +2.0 hours, respectively. Secondary effects (mostly mild) occurred in the 85.7% and the 86.8% of the users of MAD and PD, respectively. The MAD induced a decrease in the apnea-hypopnea index (AHI) from 15.3 +10.2 to 11.9 +15.5. The 50% reduction in the AHI was achieved in the 46.2% and the 18.4% of the patients treated with MAD and PD, respectively. The use of the MAD induced a reduction in the AHI by 3.4 +15.9 while the PD induced an increase by 10.6 +26.1. The subjective evaluation of the roncopathy indicated an improvement by the MAD and an increase in the perceptive quality of sleep. However, the objective evaluation of the roncopathy did not show significant improvements. Conclusions The use of MAD is efficient to reduce the AHI and improve subjectively the roncopathy. MAD could be considered in the treatment of mild-to-moderate OSA and chronic roncopathy. Key words:Obstructive sleep apnea (OSA), mandibular advance device, treatment, efficacy, clinical assay. PMID:26241460

  16. Strong interlayer coupling mediated giant two-photon absorption in MoS e2 /graphene oxide heterostructure: Quenching of exciton bands

    NASA Astrophysics Data System (ADS)

    Sharma, Rituraj; Aneesh, J.; Yadav, Rajesh Kumar; Sanda, Suresh; Barik, A. R.; Mishra, Ashish Kumar; Maji, Tuhin Kumar; Karmakar, Debjani; Adarsh, K. V.

    2016-04-01

    A complex few-layer MoS e2 /graphene oxide (GO) heterostructure with strong interlayer coupling was prepared by a facile hydrothermal method. In this strongly coupled heterostructure, we demonstrate a giant enhancement of two-photon absorption that is in stark contrast to the reverse saturable absorption of a weakly coupled MoS e2 /GO heterostructure and saturable absorption of isolated MoS e2 . Spectroscopic evidence of our study indicates that the optical signatures of isolated MoS e2 and GO domains are significantly modified in the heterostructure, displaying a direct coupling of both domains. Furthermore, our first-principles calculations indicate that strong interlayer coupling between the layers dramatically suppresses the MoS e2 excitonic bands. We envision that our findings provide a powerful tool to explore different optical functionalities as a function of interlayer coupling, which may be essential for the development of device technologies.

  17. Advanced laser-based tracking device for motor vehicle lane position monitoring and steering assistance

    NASA Astrophysics Data System (ADS)

    Bachalo, William D.; Inenaga, Andrew; Schuler, Carlos A.

    1995-12-01

    Aerometrics is developing an innovative laser-diode based device that provides a warning signal when a motor-vehicle deviates from the center of the lane. The device is based on a sensor that scans the roadway on either side of the vehicle and determines the lateral position relative to the existing painted lines marking the lane. No additional markings are required. A warning is used to alert the driver of excessive weaving or unanticipated departure from the center of the lane. The laser beams are at invisible wavelengths to that operation of the device does not pose a distraction to the driver or other motorists: When appropriate markers are not present on the road, the device is capable of detecting this condition and warn the driver. The sensor system is expected to work well irrespective of ambient light levels, fog and rain. This sensor has enormous commercial potential. It could be marketed as an instrument to warn drivers that they are weaving, used as a research tool to monitor driving patterns, be required equipment for those previously convicted of driving under the influence, or used as a backup sensor for vehicle lateral position control. It can also be used in storage plants to guide robotic delivery vehicles. In this paper, the principles of operation of the sensor, and the results of Aerometrics ongoing testing will be presented.

  18. SAW-grade SiO2 for advanced microfluidic devices

    NASA Astrophysics Data System (ADS)

    Winkler, Andreas; Menzel, Siegfried; Schmidt, Hagen

    2009-05-01

    Acoustoelectronic devices based on surface acoustic wave (SAW) technology are primarily used in radio frequency filters, delay lines, duplexers, amplifiers and RFID tags. Thereby, SAW's are excited at the surface of piezoelectric materials (e.g. Quartz, LiTaO3, LiNbO3) by an RF signal applied via interdigital transducers (IDTs)1. Novel SAW applications that emerged recently in the field of microfluidics such as the handling of minimum quantities of fluids or gases2,3 require a fluid compatible design approach, high power durability and long lifetime of the devices. However, conventional SAW devices with finger electrodes arranged on top of the chip surface experience acoustomigration damage4,5 at high power input and/or higher operating temperature leading to failure of the device. Additionally, inappropriate material systems or chip surface topography can limit their performance in microfluidic application. To overcome these limitations the electrodes can be buried in an acoustically suited ("SAW-grade") functional layer which moreover should be adjustable to the specific biotechnological task. Depending on the properties of this layer, it can suppress the acoustomigration impact6 and improve the power durability of the device. Also, a reduction of the thermally-induced frequency shift is possible7. The present paper describes a novel SAW based chip technology approach using a modular concept. Here, the electrodes are buried in surface polished SAW-grade SiO2 fabricated by means of reactive RF magnetron sputtering from a SiO2- target. This approach will be demonstrated for two different metallization systems based on Al or Cu thin films on 128° YX-LiNbO3 substrates. We also show the application of the SiO2-layer with respect to compensation of thermallyinduced frequency shift and bio /chemical surface modification. Investigations were carried out using atomic force microscopy, laser-pulse acoustic measurement, glow-discharge optical emission spectroscopy

  19. Harmonic balance optimization of terahertz Schottky diode multipliers using an advanced device model

    NASA Technical Reports Server (NTRS)

    Schlecht, E. T.; Chattopadhyay, G.; Maestrini, A.; Pukala, D.; Gill, J.; Mehdi, I.

    2002-01-01

    Substantial proress has been made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers. We have developed a harmonic balance simulator and corresponding diode model that incorporates many other factors participating in the diode behavior.

  20. Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

    NASA Technical Reports Server (NTRS)

    Koch, T. L.; Thom, R. D.; Parrish, W. D.

    1981-01-01

    The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

  1. Non-Intrusive Device for Real-Time Circulatory System Assessment with Advanced Signal Processing Capabilities

    NASA Astrophysics Data System (ADS)

    Pinheiro, E.; Postolache, O.; Girão, P.

    2010-01-01

    This paper presents a device that uses three cardiography signals to characterize several important parameters of a subject's circulatory system. Using electrocardiogram, finger photoplethysmogram, and ballistocardiogram, three heart rate estimates are acquired from beat-to-beat time interval extraction. Furthermore, pre-ejection period, pulse transit time (PTT), and pulse arrival time (PAT) are computed, and their long-term evolution is analyzed. The system estimates heart rate variability (HRV) and blood pressure variability (BPV) from the heart rate and PAT time series, to infer the activity of the cardiac autonomic system. The software component of the device evaluates the frequency content of HRV and BPV, and also their fractal dimension and entropy, thus providing a detailed analysis of the time series' regularity and complexity evolution, to allow personalized subject evaluation.

  2. Giga-Hertz Electromagnetic Wave Science and Devices for Advanced Battlefield Communications

    DTIC Science & Technology

    2010-12-15

    Microwave Assisted Magnetic Reversal”, MMM Conference, Washington D. C. (2010 19. “Hexagonal barium ferrite thin film-based millimeter wave phase...International Conference on Microwave Magnetics, Boston, June 1-4, 2010. (Contributed talk) 25. “Hexagonal barium ferrite -based millimeter wave notch...Wafer Microwave Devices, Study of Material Properties in the the GHz range Z. Celinski University of Colorado - Colorado Springs Regents of the Univ

  3. Low-Cost Photolithographic Fabrication of Nanowires and Microfilters for Advanced Bioassay Devices

    PubMed Central

    Doan, Nhi M.; Qiang, Liangliang; Li, Zhe; Vaddiraju, Santhisagar; Bishop, Gregory W.; Rusling, James F.; Papadimitrakopoulos, Fotios

    2015-01-01

    Integrated microfluidic devices with nanosized array electrodes and microfiltration capabilities can greatly increase sensitivity and enhance automation in immunoassay devices. In this contribution, we utilize the edge-patterning method of thin aluminum (Al) films in order to form nano- to micron-sized gaps. Evaporation of high work-function metals (i.e., Au, Ag, etc.) on these gaps, followed by Al lift-off, enables the formation of electrical uniform nanowires from low-cost, plastic-based, photomasks. By replacing Al with chromium (Cr), the formation of high resolution, custom-made photomasks that are ideal for low-cost fabrication of a plurality of array devices were realized. To demonstrate the feasibility of such Cr photomasks, SU-8 micro-pillar masters were formed and replicated into PDMS to produce micron-sized filters with 3–4 µm gaps and an aspect ratio of 3. These microfilters were capable of retaining 6 µm beads within a localized site, while allowing solvent flow. The combination of nanowire arrays and micro-pillar filtration opens new perspectives for rapid R&D screening of various microfluidic-based immunoassay geometries, where analyte pre-concentration and highly sensitive, electrochemical detection can be readily co-localized. PMID:25774709

  4. The effects of surface polarity and dangling bonds on the electronic properties of MoS2 on SiO2

    NASA Astrophysics Data System (ADS)

    Sung, Ha-Jun; Choe, Duk-Hyun; Chang, Kee Joo

    2015-03-01

    MoS2 has recently attracted much attention due to its intriguing physical phenomena and possible applications for the next generation electronic devices. In pristine monolayer MoS2, strong spin-orbit coupling and inversion symmetry breaking allow for an effective coupling between the spin and valley degrees of freedom, inducing valley polarization at the K valleys. However, the spin-valley coupling disappears in bilayer MoS2 because the inversion symmetry is restored. In this work, we investigate the effects of surface polarity and dangling bonds on the electronic properties of MoS2 on α-quartz SiO2 through first-principles calculations. In monolayer MoS2, a transition can take place from the direct-gap to indirect-gap semiconductor in the presence of O dangling bonds. In bilayer MoS2, O dangling bonds induce dipole fields across the interface and thus break the inversion symmetry, resulting in the valley polarization, similar to that of pristine monolayer MoS2. Based on the results, we discuss the origin of the valley polarization observed in MoS2 deposited on SiO2 This work was supported by National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and by Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

  5. Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

    NASA Astrophysics Data System (ADS)

    Sacher, Wesley David

    Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the

  6. MoS2 based dual input logic AND gate

    NASA Astrophysics Data System (ADS)

    Martinez, Luis M.; Pinto, Nicholas J.; Naylor, Carl H.; Johnson, A. T. Charlie

    2016-12-01

    Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ˜ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.

  7. Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

    PubMed

    Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

    2010-01-04

    A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

  8. Advances in nonlinear characterization of millimetre-wave devices for telecommunications

    NASA Astrophysics Data System (ADS)

    Parker, Anthony E.

    2007-12-01

    Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias dependent change in trapped charge, and variations due to impact ionization. These are feedback mechanisms that contribute to intermodulation as a memory effect does. A FET is better viewed as a nonlinear system with feedback, bias dependent rates, and high-order nonlinear conductance and charge storage with specific terminal to terminal interaction. Identifying and characterizing FET dynamics and linearity is a key step in the design process. Extraction of true intrinsic characteristics is an important first step to understanding the physics of trapping and heating within the device. Standard measurement techniques tend to derive access networks with an emphasis on scaling with layout geometry. The intrinsic device is then modelled as whatever is left after de-embedding the measurements. As such, the intrinsic model exhibits significant frequency dispersions and behaviour that is not easily related to the operation of the transistor. A correct determination of the access network reveals that the dispersions within the intrinsic data are related to physical process, such as heating and trapping. Recent work has been carried out to accurately implement trapping within a circuit simulator. This is key to correct prediction of intermodulation and bias dependence effects generated by a FET. It is shown that heating significantly affects trapping and is an important factor in the transient rate dependence of the characteristics. The implementation of trapping within a circuit model, and its consequences on linearity are explored.

  9. Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials

    DTIC Science & Technology

    1989-06-15

    PREPARED BY: W.J. Schaff S.D. OffseyI DL)L.,C ;.. $T A H. Park At~pio-ved tc- ;p7ua~ic tel-e:a~o L.F. Eastman q uoig4 04 Table of Contents Page...Graded-Index Separate-Confinement Heterostructure Single Quantum Well Lasers Grown by Molecular Beam Epitaxy", S.D. Offsey, W.J. Schaff , P.J. Tasker, H...gle Confinement Single Quantum Well Lasers Grown by Molecular Beam Epitaxy", S.D. Offsey, W.J. Schaff , P.J. Tasker and L.F. Eastman, Device Research

  10. Scalable Iterative Solvers Applied to 3D Parallel Simulation of Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    García-Loureiro, A. J.; Aldegunde, M.; Seoane, N.

    2009-08-01

    We have studied the performance of a preconditioned iterative solver to speed up a 3D semiconductor device simulator. Since 3D simulations necessitate large computing resources, the choice of algorithms and their parameters become of utmost importance. This code uses a density gradient drift-diffusion semiconductor transport model based on the finite element method which is one of the most general and complex discretisation techniques. It has been implemented for a distributed memory multiprocessor environment using the Message Passing Interface (MPI) library. We have applied this simulator to a 67 nm effective gate length Si MOSFET.

  11. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    PubMed

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.

  12. Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications

    NASA Astrophysics Data System (ADS)

    Datta, Amlan; Moed, Demi; Becla, Piotr; Overholt, Matthew; Motakef, Shariar

    2016-10-01

    Thallium bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues need to be addressed before deployment of this material for long-term field applications can be realized. In this paper, progress made towards solving some of these challenges is discussed. The most significant factors for achieving long-term performance stability for TlBr devices include residual stress as generated during crystal growth and fabrication processes, surface conditions, and the choice of contact metal. Modifications to the commonly used traveling molten zone growth technique for TlBr crystals can significantly minimize the stresses generated by large temperature gradients near the melt-solid interface of the growing crystal. Plasma processing techniques were introduced for the first time to modify the Br-etched TlBr surfaces, which resulted in improvements to the surface conditions, and consequently the spectroscopic response of the detectors. Palladium electrodes resulted a 20-fold improvement in the room-temperature device lifetime when compared to its Br-etched Pt counterpart.

  13. A highly sensitive, highly transparent, gel-gated MoS2 phototransistor on biodegradable nanopaper

    NASA Astrophysics Data System (ADS)

    Zhang, Qing; Bao, Wenzhong; Gong, Amy; Gong, Tao; Ma, Dakang; Wan, Jiayu; Dai, Jiaqi; Munday, Jeremy N.; He-Hau, Jr.; Hu, Liangbing; Zhang, Daihua

    2016-07-01

    Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as gate dielectrics and semiconductive channels for high-performance field effect transistors. Here we report on the first MoS2 phototransistor built on a flexible, transparent and biodegradable substrate with an electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited an excellent photoresponsivity of ~1.5 kA W-1, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly and biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as gate dielectrics and semiconductive channels for high-performance field effect transistors. Here we report on the first MoS2 phototransistor built on a flexible, transparent and biodegradable substrate with an electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited an excellent photoresponsivity of ~1.5 kA W-1, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent

  14. Principles to Products: Toward Realizing MOS 2.0

    NASA Technical Reports Server (NTRS)

    Bindschadler, Duane L.; Delp, Christopher L.

    2012-01-01

    This is a report on the Operations Revitalization Initiative, part of the ongoing NASA-funded Advanced Multi-Mission Operations Systems (AMMOS) program. We are implementing products that significantly improve efficiency and effectiveness of Mission Operations Systems (MOS) for deep-space missions. We take a multi-mission approach, in keeping with our organization's charter to "provide multi-mission tools and services that enable mission customers to operate at a lower total cost to NASA." Focusing first on architectural fundamentals of the MOS, we review the effort's progress. In particular, we note the use of stakeholder interactions and consideration of past lessons learned to motivate a set of Principles that guide the evolution of the AMMOS. Thus guided, we have created essential patterns and connections (detailed in companion papers) that are explicitly modeled and support elaboration at multiple levels of detail (system, sub-system, element...) throughout a MOS. This architecture is realized in design and implementation products that provide lifecycle support to a Mission at the system and subsystem level. The products include adaptable multi-mission engineering documentation that describes essentials such as operational concepts and scenarios, requirements, interfaces and agreements, information models, and mission operations processes. Because we have adopted a model-based system engineering method, these documents and their contents are meaningfully related to one another and to the system model. This means they are both more rigorous and reusable (from mission to mission) than standard system engineering products. The use of models also enables detailed, early (e.g., formulation phase) insight into the impact of changes (e.g., to interfaces or to software) that is rigorous and complete, allowing better decisions on cost or technical trades. Finally, our work provides clear and rigorous specification of operations needs to software developers, further

  15. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.

    PubMed

    Miwa, Jill A; Dendzik, Maciej; Grønborg, Signe S; Bianchi, Marco; Lauritsen, Jeppe V; Hofmann, Philip; Ulstrup, Søren

    2015-06-23

    In this work, we demonstrate direct van der Waals epitaxy of MoS2-graphene heterostructures on a semiconducting silicon carbide (SiC) substrate under ultrahigh vacuum conditions. Angle-resolved photoemission spectroscopy (ARPES) measurements show that the electronic structure of free-standing single-layer (SL) MoS2 is retained in these heterostructures due to the weak van der Waals interaction between adjacent materials. The MoS2 synthesis is based on a reactive physical vapor deposition technique involving Mo evaporation and sulfurization in a H2S atmosphere on a template consisting of epitaxially grown graphene on SiC. Using scanning tunneling microscopy, we study the seeding of Mo on this substrate and the evolution from nanoscale MoS2 islands to SL and bilayer (BL) MoS2 sheets during H2S exposure. Our ARPES measurements of SL and BL MoS2 on graphene reveal the coexistence of the Dirac states of graphene and the expected valence band of MoS2 with the band maximum shifted to the corner of the Brillouin zone at K̅ in the SL limit. We confirm the 2D character of these electronic states via a lack of dispersion with photon energy. The growth of epitaxial MoS2-graphene heterostructures on SiC opens new opportunities for further in situ studies of the fundamental properties of these complex materials, as well as perspectives for implementing them in various device schemes to exploit their many promising electronic and optical properties.

  16. Advanced devices for photoacoustic imaging to improve cancer and cerebrovascular medicine

    NASA Astrophysics Data System (ADS)

    Montilla Marien, Leonardo Gabriel

    Recent clinical studies have demonstrated that photoacoustic imaging (PAI) provides important diagnostic information for breast cancer staging. Despite these promising studies, PAI remains an unfeasible option for clinics due to the cost to implement, the required large modification in user conduct and the inflexibility of the hardware to accommodate other applications for the incremental enhancement in diagnostic information. The research described in this dissertation addresses these issues by designing attachments to clinical ultrasound probes and incorporating custom detectors into commercial ultrasound scanners. The ultimate benefit of these handheld devices is to expand the capability of current ultrasound systems and facilitate the translation of PAI to enhance cancer diagnostics and neurosurgical outcomes. Photoacoustic enabling devices (PEDs) were designed as attachments to two clinical ultrasound probes optimized for breast cancer diagnostics. PAI uses pulsed laser excitation to create transient heating (<1°C) and thermoelastic expansion that is detected as an ultrasonic emission. These ultrasonic emissions are remotely sensed to construct noninvasive images with optical contrast at depths much greater than other optical modalities. The PEDs are feasible in terms of cost, user familiarity and flexibility for various applications. Another possible application for PAI is in assisting neurosurgeons treating aneurysms. Aneurysms are often treated by placing a clip to prevent blood flow into the aneurysm. However, this procedure has risks associated with damaging nearby vessels. One of the developed PEDs demonstrated the feasibility to three-dimensionally image tiny microvasculature (<0.3mm) beyond large blood occlusions (>2.4mm) in a phantom model. The capability to use this during surgery would suggest decreasing the risks associated with these treatments. However, clinical ultrasound arrays are not clinically feasible for microsurgical applications due to

  17. Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition.

    PubMed

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

    2016-11-10

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

  18. Substrate dependence of Hall and Field-effect mobilities in few-layer MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chamlagain, Bhim; Perera, Meeghage; Chuang, Hsuen-Jen; Bowman, Arthur; Rijal, Upendra; Andrews, Kraig; Klesko, Joseph; Winter, Charles; Zhou, Zhixian

    In this work, we systematically study the Hall and field-effect mobilities of few-layer MoS2 FETs fabricated on different substrates. Hall bar devices were fabricated on SiO2 and hBN to directly measure carrier density. Standard four-probe transport measurement and Hall effect measurement were carried out for a wide temperature range to determine the carrier mobility and understand the scattering mechanisms. By comparing field-effect and Hall mobilities, we demonstrate that the intrinsic drift mobility of multiplayer MoS2 in the high carrier density metallic region is independent of substrate and sample thickness. While the optical-phonon scattering remains the dominant scattering mechanism in MoS2 devices on h-BN down to ~100 K, extrinsic scattering mechanisms start to degrade the carrier mobility of MoS2 on all other substrates below ~200 K. NSF Grant Number DMR-1308436.

  19. The ion beam sputtering facility at KURRI: Coatings for advanced neutron optical devices

    NASA Astrophysics Data System (ADS)

    Hino, Masahiro; Oda, Tatsuro; Kitaguchi, Masaaki; Yamada, Norifumi L.; Tasaki, Seiji; Kawabata, Yuji

    2015-10-01

    We describe a film coating facility for the development of multilayer mirrors for use in neutron optical devices that handle slow neutron beams. Recently, we succeeded in fabricating a large neutron supermirror with high reflectivity using an ion beam sputtering system (KUR-IBS), as well as all neutron supermirrors in two neutron guide tubes at BL06 at J-PARC/MLF. We also realized a large flexible self-standing m=5 NiC/Ti supermirror and very small d-spacing (d=1.65 nm) multilayer sheets. In this paper, we present an overview of the performance and utility of non-magnetic neutron multilayer mirrors fabricated with the KUR-IBS

  20. Development and characterization of 3D, nano-confined multicellular constructs for advanced biohybrid devices.

    SciTech Connect

    Kaehr, Bryan James

    2011-09-01

    This is the final report for the President Harry S. Truman Fellowship in National Security Science and Engineering (LDRD project 130813) awarded to Dr. Bryan Kaehr from 2008-2011. Biological chemistries, cells, and integrated systems (e.g., organisms, ecologies, etc.) offer important lessons for the design of synthetic strategies and materials. The desire to both understand and ultimately improve upon biological processes has been a driving force for considerable scientific efforts worldwide. However, to impart the useful properties of biological systems into modern devices and materials requires new ideas and technologies. The research herein addresses aspects of these issues through the development of (1) a rapid-prototyping methodology to build 3D bio-interfaces and catalytic architectures, (2) a quantitative method to measure cell/material mechanical interactions in situ and at the microscale, and (3) a breakthrough approach to generate functional biocomposites from bacteria and cultured cells.

  1. Advances in CO2 laser fabrication for high power fibre laser devices

    NASA Astrophysics Data System (ADS)

    Boyd, Keiron; Rees, Simon; Simakov, Nikita; Daniel, Jae M. O.; Swain, Robert; Mies, Eric; Hemming, Alexander; Clarkson, W. A.; Haub, John

    2016-03-01

    CO2 laser processing facilitates contamination free, rapid, precise and reproducible fabrication of devices for high power fibre laser applications. We present recent progress in fibre end-face preparation and cladding surface modification techniques. We demonstrate a fine feature CO2 laser process that yields topography significantly smaller than that achieved with typical mechanical cleaving processes. We also investigate the side processing of optical fibres for the fabrication of all-glass cladding light strippers and demonstrate extremely efficient cladding mode removal. We apply both techniques to fibres with complex designs containing multiple layers of doped and un-doped silica as well as shaped and circularly symmetric structures. Finally, we discuss the challenges and approaches to working with various fibre and glass-types.

  2. Advanced techniques for latent fingerprint detection and validation using a CWL device

    NASA Astrophysics Data System (ADS)

    Makrushin, Andrey; Hildebrandt, Mario; Fischer, Robert; Kiertscher, Tobias; Dittmann, Jana; Vielhauer, Claus

    2012-06-01

    The technology-aided support of forensic experts while investigating crime scenes and collecting traces becomes a more and more important part in the domains of image acquisition and signal processing. The manual lifting of latent fingerprints using conventional methods like the use of carbon black powder is time-consuming and very limited in its scope of application. New technologies for a contact-less and non-invasive acquisition and automatic processing of latent fingerprints, promise the possibilities to inspect much more and larger surface areas and can significantly simplify and speed up the workflow. Furthermore, it allows multiple investigations of the same trace, subsequent chemical analysis of the residue left behind and the acquisition of latent fingerprints on sensitive surfaces without destroying the surface itself. In this work, a FRT MicroProf200 surface measurement device equipped with a chromatic white-light sensor CWL600 is used. The device provides a gray-scale intensity image and 3D-topography data simultaneously. While large area scans are time-consuming, the detection and localization of finger traces are done based on low-resolution scans. The localized areas are scanned again with higher resolution. Due to the broad variety of different surface characteristics the fingerprint pattern is often overlaid by the surface structure or texture. Thus, image processing and classification techniques are proposed for validation and visualization of ridge lines in high-resolution scans. Positively validated regions containing complete or sufficient partial fingerprints are passed on to forensic experts. The experiments are provided on a set of three surfaces with different reflection and texture characteristics, and fingerprints from ten different persons.

  3. Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

    PubMed Central

    Ghosh, Sujoy; Winchester, Andrew; Muchharla, Baleeswaraiah; Wasala, Milinda; Feng, Simin; Elias, Ana Laura; Krishna, M. Bala Murali; Harada, Takaaki; Chin, Catherine; Dani, Keshav; Kar, Swastik; Terrones, Mauricio; Talapatra, Saikat

    2015-01-01

    2-Dimensional structures with swift optical response have several technological advantages, for example they could be used as components of ultrafast light modulators, photo-detectors, and optical switches. Here we report on the fast photo switching behavior of thin films of liquid phase exfoliated MoS2, when excited with a continuous laser of λ = 658 nm (E = 1.88 eV), over a broad range of laser power. Transient photo-conductivity measurements, using an optical pump and THz probe (OPTP), reveal that photo carrier decay follows a bi-exponential time dependence, with decay times of the order of picoseconds, indicating that the photo carrier recombination occurs via trap states. The nature of variation of photocurrent with temperature confirms that the trap states are continuously distributed within the mobility gap in these thin film of MoS2, and play a vital role in influencing the overall photo response. Our findings provide a fundamental understanding of the photo-physics associated with optically active 2D materials and are crucial for developing advanced optoelectronic devices. PMID:26175112

  4. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lee, Honggoo; Lee, Jongsu; Kim, Sang Min; Lee, Changhwan; Han, Sangjun; Kim, Myoungsoo; Kwon, Wontaik; Park, Sung-Ki; Vukkadala, Pradeep; Awasthi, Amartya; Kim, J. H.; Veeraraghavan, Sathish; Choi, DongSub; Huang, Kevin; Dighe, Prasanna; Lee, Cheouljung; Byeon, Jungho; Dey, Soham; Sinha, Jaydeep

    2015-03-01

    Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes - which is directly related to

  5. Advances in three-dimensional rapid prototyping of microfluidic devices for biological applications

    PubMed Central

    O'Neill, P. F.; Ben Azouz, A.; Vázquez, M.; Liu, J.; Marczak, S.; Slouka, Z.; Chang, H. C.; Diamond, D.; Brabazon, D.

    2014-01-01

    The capability of 3D printing technologies for direct production of complex 3D structures in a single step has recently attracted an ever increasing interest within the field of microfluidics. Recently, ultrafast lasers have also allowed developing new methods for production of internal microfluidic channels within the bulk of glass and polymer materials by direct internal 3D laser writing. This review critically summarizes the latest advances in the production of microfluidic 3D structures by using 3D printing technologies and direct internal 3D laser writing fabrication methods. Current applications of these rapid prototyped microfluidic platforms in biology will be also discussed. These include imaging of cells and living organisms, electrochemical detection of viruses and neurotransmitters, and studies in drug transport and induced-release of adenosine triphosphate from erythrocytes. PMID:25538804

  6. Advanced Biasing Experiments on the C-2 Field-Reversed Configuration Device

    NASA Astrophysics Data System (ADS)

    Thompson, Matthew; Korepanov, Sergey; Garate, Eusebio; Yang, Xiaokang; Gota, Hiroshi; Douglass, Jon; Allfrey, Ian; Valentine, Travis; Uchizono, Nolan; TAE Team

    2014-10-01

    The C-2 experiment seeks to study the evolution, heating and sustainment effects of neutral beam injection on field-reversed configuration (FRC) plasmas. Recently, substantial improvements in plasma performance were achieved through the application of edge biasing with coaxial plasma guns located in the divertors. Edge biasing provides rotation control that reduces instabilities and E × B shear that improves confinement. Typically, the plasma gun arcs are run at ~ 10 MW for the entire shot duration (~ 5 ms), which will become unsustainable as the plasma duration increases. We have conducted several advanced biasing experiments with reduced-average-power plasma gun operating modes and alternative biasing cathodes in an effort to develop an effective biasing scenario applicable to steady state FRC plasmas. Early results show that several techniques can potentially provide effective, long-duration edge biasing.

  7. Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2.

    PubMed

    Zhang, H; Chiappe, D; Meersschaut, J; Conard, T; Franquet, A; Nuytten, T; Mannarino, M; Radu, I; Vandervorst, W; Delabie, A

    2017-02-07

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  8. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  9. Mandibular Advancement Device as a Comparable Treatment to Nasal Continuous Positive Airway Pressure for Positional Obstructive Sleep Apnea

    PubMed Central

    Takaesu, Yoshikazu; Tsuiki, Satoru; Kobayashi, Mina; Komada, Yoko; Nakayama, Hideaki; Inoue, Yuichi

    2016-01-01

    Study Objectives: Positional obstructive sleep apnea (P-OSA) is a clinically common phenotype of OSA, which can be treated effectively with mandibular advancement devices (MADs). We hypothesized that the efficacy of an MAD is comparable to that of nasal continuous positive airway pressure (nCPAP) in P-OSA patients. Methods: Among patients diagnosed with OSA at a single sleep center from January 2008 to May 2014, male subjects with moderate OSA were recruited and stringently categorized as having P-OSA when the ratio of their lateral apnea-hypopnea index (AHI) to supine AHI was ≤ 0.5, their lateral sleep time was > 60 minutes, and their lateral REM sleep time was longer than 10 minutes. Treatment efficacy was compared between P-OSA subjects with an MAD (n = 34) and those with nCPAP (n = 34) after matching for age, body-mass index, and baseline AHI. Results: There were no significant differences in baseline AHI (MAD: nCPAP = 20.6 ± 3.9/h: 21.3 ± 1.7/h, p = 0.35) or in follow-up AHI (MAD: nCPAP = 4.7 ± 3.5/h: 3.4 ± 3.7/h, p = 0.12) between the 2 treatment groups, and hence MADs lowered the AHI to the same extent as nCPAP. Conclusions: These findings suggest that an MAD is as efficacious as nCPAP for P-OSA patients. MAD treatment for this specific phenotype may be a promising patient-tailored and first-line approach to OSA. Commentary: A commentary on this article appears in this issue on page 1079. Citation: Takaesu Y, Tsuiki S, Kobayashi M, Komada Y, Nakayama H, Inoue Y. Mandibular advancement device as a comparable treatment to nasal continuous positive airway pressure for positional obstructive sleep apnea. J Clin Sleep Med 2016;12(8):1113–1119. PMID:27250814

  10. Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2

    NASA Astrophysics Data System (ADS)

    Kayyalha, Morteza; Maassen, Jesse; Lundstrom, Mark; Shi, Li; Chen, Yong P.

    2016-10-01

    Over the past few years, there has been a growing interest in layered transition metal dichalcogenides such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity ( σ) increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-times larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy ( E F ) of the sample where an increase in the Seebeck coefficient ( S ) is observed with decreasing gate voltage ( E F ) towards the subthreshold (OFF state) of the device, reaching as large as 500 μ V / K in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor ( P F = S 2 σ ), we show that MoS2-based devices in their ON state can have P F as large as > 50 /μ W cm K 2 in the two-layer sample. The P F increases with decreasing thickness and then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.

  11. Moving graphene devices from lab to market: advanced graphene-coated nanoprobes

    NASA Astrophysics Data System (ADS)

    Hui, Fei; Vajha, Pujashree; Shi, Yuanyuan; Ji, Yanfeng; Duan, Huiling; Padovani, Andrea; Larcher, Luca; Li, Xiao Rong; Xu, Jing Juan; Lanza, Mario

    2016-04-01

    After more than a decade working with graphene there is still a preoccupying lack of commercial devices based on this wonder material. Here we report the use of high-quality solution-processed graphene sheets to fabricate ultra-sharp probes with superior performance. Nanoprobes are versatile tools used in many fields of science, but they can wear fast after some experiments, reducing the quality and increasing the cost of the research. As the market of nanoprobes is huge, providing a solution for this problem should be a priority for the nanotechnology industry. Our graphene-coated nanoprobes not only show enhanced lifetime, but also additional unique properties of graphene, such as hydrophobicity. Moreover, we have functionalized the surface of graphene to provide piezoelectric capability, and have fabricated a nano relay. The simplicity and low cost of this method, which can be used to coat any kind of sharp tip, make it suitable for the industry, allowing production on demand.After more than a decade working with graphene there is still a preoccupying lack of commercial devices based on this wonder material. Here we report the use of high-quality solution-processed graphene sheets to fabricate ultra-sharp probes with superior performance. Nanoprobes are versatile tools used in many fields of science, but they can wear fast after some experiments, reducing the quality and increasing the cost of the research. As the market of nanoprobes is huge, providing a solution for this problem should be a priority for the nanotechnology industry. Our graphene-coated nanoprobes not only show enhanced lifetime, but also additional unique properties of graphene, such as hydrophobicity. Moreover, we have functionalized the surface of graphene to provide piezoelectric capability, and have fabricated a nano relay. The simplicity and low cost of this method, which can be used to coat any kind of sharp tip, make it suitable for the industry, allowing production on demand. Electronic

  12. Microgravity experiments on boiling and applications: research activity of advanced high heat flux cooling technology for electronic devices in Japan.

    PubMed

    Suzuki, Koichi; Kawamura, Hiroshi

    2004-11-01

    Research and development on advanced high heat flux cooling technology for electronic devices has been carried out as the Project of Fundamental Technology Development for Energy Conservation, promoted by the New Energy and Industrial Technology Development Organization of Japan (NEDO). Based on the microgravity experiments on boiling heat transfer, the following useful results have obtained for the cooling of electronic devices. In subcooled flow boiling in a small channel, heat flux increases considerably more than the ordinary critical heat flux with microbubble emission in transition boiling, and dry out of the heating surface is disturbed. Successful enhancement of heat transfer is achieved by a capillary effect from grooved surface dual subchannels on the liquid supply. The critical heat flux increases 30-40 percent more than for ordinary subchannels. A self-wetting mechanism has been proposed, following investigation of bubble behavior in pool boiling of binary mixtures under microgravity. Ideas and a new concept have been proposed for the design of future cooling system in power electronics.

  13. Computational Analysis of Advanced Shape-Memory Alloy Devices Through a Robust Modeling Framework

    NASA Astrophysics Data System (ADS)

    Scalet, Giulia; Conti, Michele; Auricchio, Ferdinando

    2017-03-01

    Shape-memory alloys (SMA) provide significant advantages in various industrial fields, but their manufacturing and commercialization are currently hindered. This is attributed mainly to the poor knowledge of material behavior and the lack of standards in its mechanical characterization. SMA products are usually developed by trial-and-error testing to address specific design requirements, thus increasing costs and time. The development of simulation tools offers a possible solution to assist engineers and designers and allows to better understand SMA transformation phenomena. Accordingly, the purpose of the present paper is to numerically analyze and predict the response of spring-like actuators and septal occluders, which are industrial components exploiting the shape-memory and pseudoelastic properties of SMAs, respectively. The methodology includes two main stages: the implementation of the three-dimensional phenomenological model known as Souza-Auricchio model and the finite element modeling of the device. A discussion about the steps of each stage, as parameter identification and model generalizations, is provided. Validation results are presented through a comparison with the results of a performed experimental campaign. The framework proves good prediction capabilities and allows to reduce the number of experimental tests in the future.

  14. A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation.

    PubMed

    Rupp, K; Jungemann, C; Hong, S-M; Bina, M; Grasser, T; Jüngel, A

    The Boltzmann transport equation is commonly considered to be the best semi-classical description of carrier transport in semiconductors, providing precise information about the distribution of carriers with respect to time (one dimension), location (three dimensions), and momentum (three dimensions). However, numerical solutions for the seven-dimensional carrier distribution functions are very demanding. The most common solution approach is the stochastic Monte Carlo method, because the gigabytes of memory requirements of deterministic direct solution approaches has not been available until recently. As a remedy, the higher accuracy provided by solutions of the Boltzmann transport equation is often exchanged for lower computational expense by using simpler models based on macroscopic quantities such as carrier density and mean carrier velocity. Recent developments for the deterministic spherical harmonics expansion method have reduced the computational cost for solving the Boltzmann transport equation, enabling the computation of carrier distribution functions even for spatially three-dimensional device simulations within minutes to hours. We summarize recent progress for the spherical harmonics expansion method and show that small currents, reasonable execution times, and rare events such as low-frequency noise, which are all hard or even impossible to simulate with the established Monte Carlo method, can be handled in a straight-forward manner. The applicability of the method for important practical applications is demonstrated for noise simulation, small-signal analysis, hot-carrier degradation, and avalanche breakdown.

  15. From Microscale Devices to 3D Printing: Advances in Fabrication of 3D Cardiovascular Tissues.

    PubMed

    Borovjagin, Anton V; Ogle, Brenda M; Berry, Joel L; Zhang, Jianyi

    2017-01-06

    Current strategies for engineering cardiovascular cells and tissues have yielded a variety of sophisticated tools for studying disease mechanisms, for development of drug therapies, and for fabrication of tissue equivalents that may have application in future clinical use. These efforts are motivated by the need to extend traditional 2-dimensional (2D) cell culture systems into 3D to more accurately replicate in vivo cell and tissue function of cardiovascular structures. Developments in microscale devices and bioprinted 3D tissues are beginning to supplant traditional 2D cell cultures and preclinical animal studies that have historically been the standard for drug and tissue development. These new approaches lend themselves to patient-specific diagnostics, therapeutics, and tissue regeneration. The emergence of these technologies also carries technical challenges to be met before traditional cell culture and animal testing become obsolete. Successful development and validation of 3D human tissue constructs will provide powerful new paradigms for more cost effective and timely translation of cardiovascular tissue equivalents.

  16. New regulations for medical devices: Rationale, advances and impact on research and patient care.

    PubMed

    Labek, Gerold; Schöffl, Harald; Stoica, Christian Ioan

    2016-03-18

    A series of events relating to inferior medical devices has brought about changes in the legal requirements regarding quality control on the part of regulators. Apart from clinical studies, register and routine data will play an essential role in this context. To ensure adequate use of these data, adapted methodologies are required as register data in fact represent a new scientific entity. For the interpretation of register and routine data several limitations of published data should be taken into account. In many cases essential parameters of study cohorts - such as age, comorbidities, the patients' risk profiles or the hospital profile - are not presented. Required data and evaluation procedures differ significantly, for example, between hip and spine implants. A "one fits for all" methodology is quite unlikely to exist and vigorous efforts will be required to develop suitable standards in the next future. The new legislation will affect all high-risk products, besides joint implants also contact lenses, cardiac pacemakers or stents, for example, the new regulations can markedly enhance product quality monitoring. Register data and clinical studies should not be considered as competitors, they complement each other when used responsibly. In the future follow-up studies should increasingly focus on specific questions, while global follow-up investigations regarding product complication rates and surgical methods will increasingly be covered by registers.

  17. Introductory lecture. Advanced laser spectroscopy in combustion chemistry: from elementary steps to practical devices.

    PubMed

    Wolfrum, J

    2001-01-01

    In recent years a large number of linear and nonlinear laser-based diagnostic techniques for nonintrusive measurements of species concentrations, temperatures, and gas velocities in a wide pressure and temperature range with high temporal and spatial resolution have been developed and have become extremely valuable tools to study many aspects of combustion. Beside the nonintrusive diagnostics of technical combustion devices the kinetics and microscopic dynamics of elementary chemical combustion reactions can be investigated in great detail by laser spectroscopy. These investigations show, that a small number of relatively simple elementary steps like H + O2-->OH + O, H2O2-->2OH, O + N2-->NO + N, NH2 + NO-->H2O + N2, OH + N2H control a large variety of combustion phenomena and pollutant formation processes. Laminar flames are ideal objects to develop the application of laser spectroscopic methods for practical combustion systems and to test and improve the gas-phase reaction mechanism in combustion models. Nonintrusive laser point and field measurements are of basic importance in the validation and further development of turbulent combustion models. Nonlinear laser spectroscopic techniques using infrared-visible sum-frequency generation can now bridge the pressure and materials gap to provide kinetic data for catalytic combustion. Finally, the potential of laser techniques for active combustion control in municipal waste incinerators is illustrated.

  18. Advances in molecular electronics: Synthesis and testing of potential molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Price, David Wilson, Jr.

    New potential molecular electronics devices have been synthesized based on our knowledge of previous systems that have come out of our group. Previous studies and current studies have shown that simple molecular systems demonstrate negative differential resistance (NDR) and memory characteristics. The new systems rely primarily on the redox properties of the compounds to improve upon the solid state properties already observed. Most of these new organic compounds use thiol-based "alligator clips" for attachment to metal surfaces. Some of the compounds, however, contain different "alligator clips," primarily isonitriles, for attachment to metal substrates. It is our hope that these new "alligator clips" will offer lower conductivity barriers (higher current density). Electrochemical tests have been performed in order to evaluate those redox properties and in the hope of using those electrochemical results as a predictive tool to evaluate the usefulness of those compounds. Also, organic structures with polymerizable functionalities have been synthesized in order to cross-link the molecules once they are a part of a self-assembled monolayer (SAM). This has been shown to enable the electrochemical growth of polypyrrole from a SAM in a controllable manner.

  19. Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

    DOE PAGES

    Santosh, K. C.; Longo, Roberto; Addou, Rafik; ...

    2016-09-26

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effectmore » (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations.« less

  20. Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts.

    PubMed

    K C, Santosh; Longo, Roberto C; Addou, Rafik; Wallace, Robert M; Cho, Kyeongjae

    2016-09-26

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations.

  1. Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

    NASA Astrophysics Data System (ADS)

    K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

    2016-09-01

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations.

  2. Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

    PubMed Central

    K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

    2016-01-01

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations. PMID:27666523

  3. Cell Phone-Based and Adherence Device Technologies for HIV Care and Treatment in Resource-Limited Settings: Recent Advances.

    PubMed

    Campbell, Jeffrey I; Haberer, Jessica E

    2015-12-01

    Numerous cell phone-based and adherence monitoring technologies have been developed to address barriers to effective HIV prevention, testing, and treatment. Because most people living with HIV and AIDS reside in resource-limited settings (RLS), it is important to understand the development and use of these technologies in RLS. Recent research on cell phone-based technologies has focused on HIV education, linkage to and retention in care, disease tracking, and antiretroviral therapy adherence reminders. Advances in adherence devices have focused on real-time adherence monitors, which have been used for both antiretroviral therapy and pre-exposure prophylaxis. Real-time monitoring has recently been combined with cell phone-based technologies to create real-time adherence interventions using short message service (SMS). New developments in adherence technologies are exploring ingestion monitoring and metabolite detection to confirm adherence. This article provides an overview of recent advances in these two families of technologies and includes research on their acceptability and cost-effectiveness when available. It additionally outlines key challenges and needed research as use of these technologies continues to expand and evolve.

  4. Identification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples

    NASA Astrophysics Data System (ADS)

    Brandão, F. D.; Ribeiro, G. M.; Vaz, P. H.; González, J. C.; Krambrock, K.

    2016-06-01

    MoS2 monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS2 shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS2 monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS2 with a corresponding donor concentration of about 108-12 defects/cm2 for MoS2 monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 1015 cm-3, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 1019 cm-3 and net acceptor concentration of 5 × 1018 cm-3 related to sulfur vacancies.

  5. 4D Ultrasound - Medical Devices for Recent Advances on the Etiology of Cerebral Palsy

    PubMed Central

    Tomasovic, Sanja; Predojevic, Maja

    2011-01-01

    Children cerebral palsy (CCP) encompasses a group of nonprogessive and noninfectious conditions, which cause light, moderate, and severe deviations in neurological development. Diagnosis of CCP is set mostly by the age of 3 years. The fact that a large number of cerebral damage occurs prenatally and the fact that early intervention in cases of neurological damage is successful, prompted some researchers to explore the possibility of detecting neurologically damaged fetus in the uterus. This research was made possible thanks to the development of two-dimensional ultrasound technology in a real time, which enabled the display of the mobility of the fetus. Advancement of the ultrasound technology has enabled the development of 4D ultrasound where a spontaneous fetal movement can be observed almost in a real time. Estimate of the number and quality of spontaneous fetal movements and stitches on the head, the neurology thumb and a high palate were included in the prenatal neurological screening of the fetus. This raises the question, as to does the fetal behavior reflect, (which was revealed in 2D or 4D ultrasound), fetal neurological development in a manner that will allow the detection of the brain damage. PMID:23407920

  6. 4D Ultrasound - Medical Devices for Recent Advances on the Etiology of Cerebral Palsy.

    PubMed

    Tomasovic, Sanja; Predojevic, Maja

    2011-12-01

    Children cerebral palsy (CCP) encompasses a group of nonprogessive and noninfectious conditions, which cause light, moderate, and severe deviations in neurological development. Diagnosis of CCP is set mostly by the age of 3 years. The fact that a large number of cerebral damage occurs prenatally and the fact that early intervention in cases of neurological damage is successful, prompted some researchers to explore the possibility of detecting neurologically damaged fetus in the uterus. This research was made possible thanks to the development of two-dimensional ultrasound technology in a real time, which enabled the display of the mobility of the fetus. Advancement of the ultrasound technology has enabled the development of 4D ultrasound where a spontaneous fetal movement can be observed almost in a real time. Estimate of the number and quality of spontaneous fetal movements and stitches on the head, the neurology thumb and a high palate were included in the prenatal neurological screening of the fetus. This raises the question, as to does the fetal behavior reflect, (which was revealed in 2D or 4D ultrasound), fetal neurological development in a manner that will allow the detection of the brain damage.

  7. Rational design of multifunctional devices based on molybdenum disulfide and graphene hybrid nanostructures

    NASA Astrophysics Data System (ADS)

    Lim, Yi Rang; Lee, Young Bum; Kim, Seong Ku; Kim, Seong Jun; Kim, Yooseok; Jeon, Cheolho; Song, Wooseok; Myung, Sung; Lee, Sun Sook; An, Ki-Seok; Lim, Jongsun

    2017-01-01

    We rationally designed a new type of hybrid materials, molybdenum disulfide (MoS2) synthesized by Mo pre-deposition followed by subsequent sulfurization process directly on thermal chemical vapor deposition (TCVD)-grown graphene, for applications in a multifunctional device. The synthesis of stoichiometric and uniform multilayer MoS2 and high-crystalline monolayer graphene was evaluated by X-ray photoelectron spectroscopy and Raman spectroscopy. To examine the electrical transport and photoelectrical properties of MoS2-graphene hybrid films, field effect transistors (FETs) and visible-light photodetectors based on MoS2-graphene were both fabricated. As a result, the extracted mobility for MoS2-graphene hybrid FETs was two times higher than that of MoS2 FETs. In addition, the MoS2-graphene photodetectors revealed a significant photocurrent with abrupt switching behavior under periodic illumination.

  8. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction

    PubMed Central

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-01-01

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potentially give some new insights into two-dimensional layered materials related photonics. PMID:25213108

  9. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction.

    PubMed

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-09-12

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potential y give some new insights into two-dimensional layered materials related photonics.

  10. Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2.

    PubMed

    Zhu, Lin; Zou, Fei; Gao, Guoying; Yao, Kailun

    2017-03-29

    By using the non-equilibrium Green's function with density functional theory, we have studied the thermal spin transport properties of Fe-C6 cluster doped monolayer MoS2. The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias voltage. Moreover, we also find the thermal colossal magnetoresistance effect, which is as high as 10(7)%. The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS2-based multifunctional spin caloritronic devices.

  11. A compact plasmonic MOS-based 2×2 electro-optic switch

    NASA Astrophysics Data System (ADS)

    Ye, Chenran; Liu, Ke; Soref, Richard A.; Sorger, Volker J.

    2015-01-01

    We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

  12. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma

    NASA Astrophysics Data System (ADS)

    Islam, Muhammad R.; Kang, Narae; Bhanu, Udai; Paudel, Hari P.; Erementchouk, Mikhail; Tetard, Laurene; Leuenberger, Michael N.; Khondaker, Saiful I.

    2014-08-01

    We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS2 and other transition metal dichalcogenides.We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS2

  13. Measurement of gas bremsstrahlung from the insertion device beamlines of the advanced photon source

    SciTech Connect

    Pisharody, M.; Job, P.K.; Magill, S.

    1997-03-01

    High energy electron storage rings generate energetic bremsstrahlung photons through radiative interaction of the electrons (or positrons) with the residual gas molecules inside the storage ring. The resulting radiation exits at an average emittance angle of (m{sub 0}c{sub 2}/E) radian with respect to the electron beam path, where m{sub 0}c{sup 2} is the rest mass of E the electron and E its kinetic energy. Thus, at straight sections of the storage rings, moving electrons will produce a narrow and intense monodirectional photon beam. At synchrotron radiation facilities, where beamlines are channeled out of the storage ring, a continuous gas bremsstrahlung spectrum, with a maximum energy of the electron beam, will be present. There are a number of compelling reasons that a measurement of the bremsstrahlung characteristics be conducted at the Advanced Photon Source (APS) storage ring. Although the number of residual gas molecules present in the storage ring at typical nTorr vacuum is low, because of the long straight paths of the electrons in the storage ring at APS, significant production of bremsstrahlung will be produced. This may pose a radiation hazard. It is then imperative that personnel be shielded from dose rates due to this radiation. There are not many measurements available for gas bremsstrahlung, especially for higher electron beam energies. The quantitative estimates of gas bremsstrahlung from storage rings as evaluated by Monte Carlo codes also have several uncertainties. They are in general calculated for air at atmospheric pressure, the results of which are then extrapolated to typical storage ring vacuum values (of the order of 10{sup -9} Torr). Realistically, the actual pressure profile can vary inside the narrow vacuum chamber. Also, the actual chemical composition of the residual gas inside the storage ring is generally different from that of air.

  14. Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures

    DTIC Science & Technology

    1990-12-01

    0W " -Annual Letter Report- N,4 Research and Developmen. on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and...Microwave Frequency Silicon Carbide -Based Device Structures Supported under Grant #N00014-88-K-0341/P00002 Office of the Chief of Naval Research Report...SUBTITLE Research and Development on Advanced S. FUNDING NUMBERS Silicon Carbide Thin Filn.Growth Technl.ques and R&T:212k003---03 Fabrication of High

  15. Advanced Microfabricated Devices for Sensitive Biomarker Detection and Analysis on Mars

    NASA Astrophysics Data System (ADS)

    Skelley, A. M.; Scherer, J. R.; Aubrey, A. D.; Grover, W. H.; Ehrenfreund, P.; Grunthaner, F. J.; Bada, J. L.; Willis, P.; Mathies, R. A.

    2006-12-01

    Detection of life on Mars requires definition of a suitable biomarker and development of sensitive instrumentation capable of performing in situ chemical analyses [1]. Our studies have focused on amino acid analysis because amino acids are more resistant to decomposition than other biomolecules, and because amino acid chirality is a well-defined biomarker. We have developed the Mars Organic Analyzer (MOA), a portable amino acid analysis system that consists of a compact instrument and a novel multi-layer CE microchip, and we have performed extensive laboratory and field validation of this instrument [2]. The heart of the MOA is the 100-mm diameter, 4-mm thick microchip that contains the CE separation channels as well as microfabricated valves and pumps for automated integrated sample preparation and handling. The microfabricated device is operated by a portable instrument that performs CE separation and LIF detection. The limits of detection of fluorescamine-labeled amino acids are in the nM to pM range corresponding to part- per-trillion sensitivities. The MOA has been field tested on soil samples rich in jarosite from the Panoche Valley, CA. These results demonstrate that amines and amino acids can be extracted from sulfate-rich acidic soils such as jarosite and analyzed using the MOA. The MOA was also recently field tested in the Yungay region of the Atacama Desert in Chile. The instrument was successfully operated in this challenging environment and performed over 300 amino acid analyses in a two week period. The MOA has also been used to label and analyze two of the four nucleobases, and methods are being developed to detect PAH's [3]. This presentation will discuss the unique challenges of developing microdevices for sensitive analysis of biomarker compounds. We will also describe current efforts to develop multichannel analysis systems and microfluidic automated analysis systems that will be used to enable flight versions of this instrument. For more details

  16. Highly effective and accurate weak point monitoring method for advanced design rule (1x nm) devices

    NASA Astrophysics Data System (ADS)

    Ahn, Jeongho; Seong, ShiJin; Yoon, Minjung; Park, Il-Suk; Kim, HyungSeop; Ihm, Dongchul; Chin, Soobok; Sivaraman, Gangadharan; Li, Mingwei; Babulnath, Raghav; Lee, Chang Ho; Kurada, Satya; Brown, Christine; Galani, Rajiv; Kim, JaeHyun

    2014-04-01

    Historically when we used to manufacture semiconductor devices for 45 nm or above design rules, IC manufacturing yield was mainly determined by global random variations and therefore the chip manufacturers / manufacturing team were mainly responsible for yield improvement. With the introduction of sub-45 nm semiconductor technologies, yield started to be dominated by systematic variations, primarily centered on resolution problems, copper/low-k interconnects and CMP. These local systematic variations, which have become decisively greater than global random variations, are design-dependent [1, 2] and therefore designers now share the responsibility of increasing yield with manufacturers / manufacturing teams. A widening manufacturing gap has led to a dramatic increase in design rules that are either too restrictive or do not guarantee a litho/etch hotspot-free design. The semiconductor industry is currently limited to 193 nm scanners and no relief is expected from the equipment side to prevent / eliminate these systematic hotspots. Hence we have seen a lot of design houses coming up with innovative design products to check hotspots based on model based lithography checks to validate design manufacturability, which will also account for complex two-dimensional effects that stem from aggressive scaling of 193 nm lithography. Most of these hotspots (a.k.a., weak points) are especially seen on Back End of the Line (BEOL) process levels like Mx ADI, Mx Etch and Mx CMP. Inspecting some of these BEOL levels can be extremely challenging as there are lots of wafer noises or nuisances that can hinder an inspector's ability to detect and monitor the defects or weak points of interest. In this work we have attempted to accurately inspect the weak points using a novel broadband plasma optical inspection approach that enhances defect signal from patterns of interest (POI) and precisely suppresses surrounding wafer noises. This new approach is a paradigm shift in wafer inspection

  17. MOS 2.0: Modeling the Next Revolutionary Mission Operations System

    NASA Technical Reports Server (NTRS)

    Delp, Christopher L.; Bindschadler, Duane; Wollaeger, Ryan; Carrion, Carlos; McCullar, Michelle; Jackson, Maddalena; Sarrel, Marc; Anderson, Louise; Lam, Doris

    2011-01-01

    Designed and implemented in the 1980's, the Advanced Multi-Mission Operations System (AMMOS) was a breakthrough for deep-space NASA missions, enabling significant reductions in the cost and risk of implementing ground systems. By designing a framework for use across multiple missions and adaptability to specific mission needs, AMMOS developers created a set of applications that have operated dozens of deep-space robotic missions over the past 30 years. We seek to leverage advances in technology and practice of architecting and systems engineering, using model-based approaches to update the AMMOS. We therefore revisit fundamental aspects of the AMMOS, resulting in a major update to the Mission Operations System (MOS): MOS 2.0. This update will ensure that the MOS can support an increasing range of mission types, (such as orbiters, landers, rovers, penetrators and balloons), and that the operations systems for deep-space robotic missions can reap the benefits of an iterative multi-mission framework.12 This paper reports on the first phase of this major update. Here we describe the methods and formal semantics used to address MOS 2.0 architecture and some early results. Early benefits of this approach include improved stakeholder input and buy-in, the ability to articulate and focus effort on key, system-wide principles, and efficiency gains obtained by use of well-architected design patterns and the use of models to improve the quality of documentation and decrease the effort required to produce and maintain it. We find that such methods facilitate reasoning, simulation, analysis on the system design in terms of design impacts, generation of products (e.g., project-review and software-delivery products), and use of formal process descriptions to enable goal-based operations. This initial phase yields a forward-looking and principled MOS 2.0 architectural vision, which considers both the mission-specific context and long-term system sustainability.

  18. Advanced finite-difference time-domain techniques for simulation of optical devices with complex material properties and geometric configurations

    NASA Astrophysics Data System (ADS)

    Zhou, Dong

    2005-11-01

    Modeling and simulation play increasingly more important roles in the development and commercialization of optical devices and integrated circuits. The current trend in photonic technologies is to push the level of integration and to utilize materials and structures of increasing complexity. On the other hand, the superb characteristics of free-space and fiber-optics continue to hold strong position to serve a wide range of applications. All these constitute significant challenges for the computer-aided modeling, simulation, and design of such optical devices and systems. The research work in this thesis deals with investigation and development of advanced finite-difference time-domain (FDTD) methods with focus on emerging optical devices and integrated circuits with complex material and/or structural properties. On the material aspects, we consider in a systematic fashion the dispersive and anisotropic characteristics of different materials (i.e., insulators, semiconductors, and conductors) in a broad wavelength range. The Lorentz model is examined and adapted as a general model for treating the material dispersion in the context of FDTD solutions. A dispersive FDTD method based on the multi-term Lorentz dispersive model is developed and employed for the modeling and design of the optical devices. In the FDTD scheme, the perfectly matched layer (PML) boundary condition is extended to the dispersive medium with arbitrary high order Lorentz terms. Finally, a parameter extraction scheme that links the Lorentz model to the experimental results is established. Further, the dispersive FDTD method is then applied to modeling and simulation of magneto-optical (MO) disk system, in combination of the vector diffraction theory. While the former is used for analysis of the interaction of the focused optical field interacting with the conducting materials on the surface of disk, the latter is to simulate the beam propagation from the objective lens to the disk surface. The

  19. The effect of defects produced by electron irradiation on the electrical properties of graphene and MoS2

    NASA Astrophysics Data System (ADS)

    Rodriguez-Manzo, Julio Alejandro; Balan, Adrian; Nayor, Carl; Parkin, Will; Puster, Matthew; Johnson, A. T. Charlie; Drndic, Marija

    2015-03-01

    We present a study of the effects of the defects produced by electron irradiation on the electrical and crystalline properties of graphene and MoS2 monolayers. We realized back or side gated electrical devices from monolayer MoS2 or graphene crystals (triangles respectively hexagons) suspended on a 50nm SiNx m. The devices are exposed to electron irradiation inside a 200kV transmission electron microscope (TEM) and we perform in situ conductance measurements. The number of defects and the quality of the crystalline lattice obtained by diffraction are correlated with the observed decrease in mobility and conductivity of the devices. We observe a different behavior between MoS2 and graphene, and try to associate this with different models for conduction with defects. Finally, we use the TEM electron beam to tailor the macroscopic layers into ribbons to be used as the sensing element in MoS2 nanoribbon - nanopore devices for DNA detection and sequencing.

  20. Manganese and chromium doping in atomically thin MoS2

    NASA Astrophysics Data System (ADS)

    Huang, Ce; Jin, Yibo; Wang, Weiyi; Tang, Lei; Song, Chaoyu; Xiu, Faxian

    2017-03-01

    Recently, two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications. However, the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers. Here we report on the chromium (Cr) and manganese (Mn) doping in atomically-thin {{{MoS}}}{{2}} crystals grown by chemical vapor deposition. The Cr/Mn doped {{{MoS}}}{{2}} samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra, respectively, compared with the undoped one at 1.85 eV. The field-effect transistor (FET) devices based on the Mn doping show a higher threshold voltage than that of the pure {{{MoS}}}{{2}} while the Cr doping exhibits the opposite behavior. Importantly, the carrier concentration in these samples displays a remarkable difference arising from the doping effect, consistent with the evolution of the FET performance. The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy. The successful incorporation of the Mn and Cr impurities into the monolayer {{{MoS}}}{{2}} paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors. Project supported by the National Young 1000 Talent Plan, the Pujiang Talent Plan in Shanghai, the National Natural Science Foundation of China (Nos. 61322407, 11474058, 61674040), and the Chinese National Science Fund for Talent Training in Basic Science (No. J1103204).

  1. Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

    NASA Astrophysics Data System (ADS)

    Hu, Bo; Huang, Shi-Hua; Wu, Feng-Min

    2013-01-01

    A model based on analysis of the self-consistent Poisson—Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si—SiO2 interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si—SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 1012 cm-2, which results from the great change of bound electrons near the Si—SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.

  2. MoS2 /Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance.

    PubMed

    Zhang, Xiaoyan; Selkirk, Andrew; Zhang, Saifeng; Huang, Jiawei; Li, Yuanxin; Xie, Yafeng; Dong, Ningning; Cui, Yun; Zhang, Long; Blau, Werner J; Wang, Jun

    2017-03-08

    Nanocomposites of layered MoS2 and multi-walled carbon nanotubes (CNTs) with core-shell structure were prepared by a simple solvothermal method. The formation of MoS2 nanosheets on the surface of coaxial CNTs has been confirmed by scanning electron microscopy, transmission electron microscopy, absorption spectrum, Raman spectroscopy, and X-ray photoelectron spectroscopy. Enhanced third-order nonlinear optical performances were observed for both femtosecond and nanosecond laser pulses over a broad wavelength range from the visible to the near infrared, compared to those of MoS2 and CNTs alone. The enhancement can be ascribed to the strong coupling effect and the photoinduced charge transfer between MoS2 and CNTs. This work affords an efficient way to fabricate novel CNTs based nanocomposites for enhanced nonlinear light-matter interaction. The versatile nonlinear properties imply a huge potential of the nanocomposites in the development of nanophotonic devices, such as mode-lockers, optical limiters, or optical switches.

  3. MoS2 : Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene

    NASA Astrophysics Data System (ADS)

    Lu, Chih-Pin; Li, Guohong; Watanabe, K.; Taniguchi, T.; Andrei, Eva Y.

    2014-10-01

    One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hexagonal boron nitride (h -BN ), still pose limitations: graphite being metallic does not allow gating, while both h -BN and graphite, having lattice structures closely matched to that of graphene, may cause significant band structure reconstruction. Here we show that the atomically smooth surface of exfoliated MoS2 provides access to the intrinsic electronic structure of graphene without these drawbacks. Using scanning tunneling microscopy and Landau-level (LL) spectroscopy in a device configuration that allows tuning of the carrier concentration, we find that graphene on MoS2 is ultraflat, producing long mean free paths, while avoiding band structure reconstruction. Importantly, the screening of the MoS2 substrate can be tuned by changing the position of the Fermi energy with relatively low gate voltages. We show that shifting the Fermi energy from the gap to the edge of the conduction band gives rise to enhanced screening and to a substantial increase in the mean free path and quasiparticle lifetime. MoS2 substrates thus provide unique opportunities to access the intrinsic electronic properties of graphene and to study in situ the effects of screening on electron-electron interactions and transport.

  4. Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method

    SciTech Connect

    Dababneh, S.A.; Hawkins, C.F.; Soden, J.M.

    1994-09-01

    Degradation in nMOS transistors from gate oxide shorts is dependent upon oxide trapping and interface state generation. Three distinct damage mechanisms were identified, including generation of: (1) electron traps in the bulk oxide by the injected holes, N{sub ox,h}, (2) electron traps in the bulk oxide by the injected electrons, N{sub ox,e}, and (3) interface states, N{sub ss}. The three damage mechanisms are incorporated into a device lifetime prediction method.

  5. A review of electrical characterization techniques for ultrathin FDSOI materials and devices

    NASA Astrophysics Data System (ADS)

    Cristoloveanu, Sorin; Bawedin, Maryline; Ionica, Irina

    2016-03-01

    The characterization of nanosize SOI materials and devices is challenging because multiple oxides, interfaces and channels coexist. Conventional measurement methods need to be replaced, or at least updated. We review the routine techniques that proved efficient for the evaluation of bare SOI wafers (essentially the pseudo-MOSFET) and of MOS structures (transistors and gated diodes). Informative examples are selected to illustrate the typical properties of advanced SOI wafers and MOSFETs. We will show how the ultrathin film and short-channel effects affect the interpretation of the experimental data.

  6. Resolution capacity of Hall microsensors in MOS structures

    NASA Astrophysics Data System (ADS)

    Căruntu, George; Panait, Cornel; Căruntu, Irina

    2010-11-01

    An essential parameter in the setting up of the performance of the measurement systems that uses Hall microsensors is the detection limit of such devices. The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in bipolar and MOS integrated circuits technology. On the basis of adequate models these have been established the noise main characteristics for double collector vertical magnetotransistor and for double-drain MOSFET magnetotransistors. By using the numerical simulation the values of the signal-to-noise ratio and the detection limits for the two analysed structured are compared and it is also emphasized the way in which choosing the geometry and the material features allow getting high-performance sensors.

  7. Interlayer resistance of misoriented MoS2.

    PubMed

    Zhou, Kuan; Wickramaratne, Darshana; Ge, Supeng; Su, Shanshan; De, Amrit; Lake, Roger K

    2017-04-05

    Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS2 as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.

  8. Hydrogen intercalation in MoS2

    NASA Astrophysics Data System (ADS)

    Zhu, Zhen; Peelaers, Hartwin; Van de Walle, Chris G.

    2016-08-01

    We investigate the structure and energetics of interstitial hydrogen and hydrogen molecules in layered 2 H -MoS2, an issue of interest both for hydrogen storage applications and for the use of MoS2 as an (opto)electronic material. Using first-principles density functional theory we find that hydrogen interstitials are deep donors. H2 molecules are electrically inactive and energetically more stable than hydrogen interstitials. Their equilibrium position is the hollow site of the MoS2 layers. The migration barrier of a hydrogen molecule is calculated to be smaller than 0.6 eV. We have also explored the insertion energies of hydrogen molecules as a function of hydrogen concentration in MoS2. For low concentrations, additional inserted H2 molecules prefer to be located in hollow sites (on top of the center of a hexagon) in the vicinity of an occupied site. Once two molecules have been inserted, the energy cost for inserting additional H2 molecules becomes much lower. Once all hollow sites are filled, the energy cost increases, but only by a modest amount. We find that up to 13 H2 molecules can be accommodated within the same interlayer spacing of an areal 3 ×3 supercell.

  9. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

    NASA Astrophysics Data System (ADS)

    Bergeron, Hadallia; Sangwan, Vinod K.; McMorrow, Julian J.; Campbell, Gavin P.; Balla, Itamar; Liu, Xiaolong; Bedzyk, Michael J.; Marks, Tobin J.; Hersam, Mark C.

    2017-01-01

    Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this letter, we report the chemical vapor deposition (CVD) of monolayer MoS2 directly on 20 nm thick Al2O3 grown by atomic layer deposition (ALD). The quality of the resulting MoS2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al2O3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS2 (800 °C). Field-effect transistors (FETs) derived from these MoS2/Al2O3 stacks show minimal hysteresis with a sub-threshold swing as low as ˜220 mV/decade, threshold voltages of ˜2 V, and current ION/IOFF ratio as high as ˜104, where IOFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. The system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.

  10. Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

    We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

  11. Ionic-Liquid Gated Few-layer MoS2 Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Perera, Meeghage; Lin, Ming-Wei; Chuang, Hsun-Jen; Chamlagain, Bhim; Wang, Chongyu; Tan, Xuebin; Cheng, Mark Ming-Cheng; Zhou, Zhixian

    2013-03-01

    We report the electrical characterization of ionic-liquid-gated bilayer and few-layer MoS2 field-effect transistors. The extrinsic mobility of our ionic-liquid-gated devices exceeds 70 cm2V-1S-1 at 250 K, which is 1-2 orders of magnitude higher than that measured in the Si back-gate configuration (without ionic liquid). These devices also show ambipolar behavior with a high ON-OFF current ratio of > 107 for electrons and > 106 for holes, and a near ideal subthreshold swing (SS) of ~ 50 mV/decade at 250 K for the electron channel. More significantly, we show that the mobility increases from ~ 100 cm2V-1S-1 at 180 K to ~ 220 cm2V-1S-1 at 77K as the temperature decreases following a μ ~ T-γ dependence with γ ~ 1, indicating that the intrinsic phonon-limited mobility can be achieved in few-layer MoS2 FETs. We attribute the enhanced device performance to the drastic reduction of the Schottky barrier width (thus higher tunneling efficiency) via highly efficient band bending at the MoS2/metal interface afforded by the extremely large electrical double layer capacitance of the ionic liquid. This work was supported by NSF (No. ECCS-1128297).

  12. Optics, mechanics, and energetics of two-dimensional MoS2 nanostructures from a theoretical perspective.

    PubMed

    Joswig, Jan-Ole; Lorenz, Tommy; Wendumu, Tsegabirhan Berhane; Gemming, Sibylle; Seifert, Gotthard

    2015-01-20

    CONSPECTUS: Nanostructures based on molybdenum disulfide (MoS2) are by far the most common and well-studied systems among two-dimensional (2D) semiconducting materials. Although still being characterized as a "promising material", catalytic activity of MoS2 nanostructures has been found, and applications in lubrication processes are pursued. Because exfoliation techniques have improved over the past years, monolayer MoS2 is easily at hand; thus, experimental studies on its electronic properties and applicability are in scientific focus, and some MoS2-based electronic devices have been reported already. Additionally, the improvement of atomic force microscopy led to nanoindentation experiments, in which the exceptional mechanical properties of MoS2 could be confirmed. In this Account, we review recent results from density-functional based calculations on several MoS2-based nanostructures; we have chosen to follow several experimental routes focusing on different nanostructures and their specific properties. MoS2-based triangular nanoflakes are systems that are experimentally well described and studied with a special focus on their optical absorption. The interpretation of our calculations fits well to the experimental picture: the absorption peaks in the visible light range show a quantum-confinement effect; they originate from excitations into the edge states. Additionally, delocalized metallic-like states are present close to the Fermi level, which do not contribute to photoabsorption in the visible range. Additionally, nanoindentation experiments have been simulated to obtain mechanical properties of the MoS2 material and to study the influence of deformation on the system's electronics. In these molecular-dynamics simulations, a tip penetrates a MoS2 monolayer, and the obtained Young's modulus and breaking stress agree very well with experimentally obtained values. Whereas the structural properties, such as bond lengths and layer contraction, vary locally

  13. Charge neutral MoS2 field effect transistors through oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Dhall, Rohan; Li, Zhen; Kosmowska, Ewa; Cronin, Stephen B.

    2016-11-01

    Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process. In this study, we demonstrate a simple and reliable oxygen plasma treatment, which mitigates the effects of unintentional doping created by surface defect sites, such as S vacancies, and surface contamination. This plasma treatment restores charge neutrality to the MoS2 and shifts the threshold turn-on voltage towards 0 V. Out of the 10 devices measured, all exhibit a shift of the FET turn-on voltage from an average of -18 V to -2 V. The oxygen plasma treatment passivates these defects, which reduces surface scattering, causing increased mobility and improved subthreshold swing. For as-prepared devices with low mobilities (˜0.01 cm2/V s), we observe up to a 190-fold increase in mobility after exposure to the oxygen plasma. Perhaps the most important aspect of this oxygen plasma treatment is that it reduces the device-to-device variability, which is a crucial factor in realizing any practical application of these devices.

  14. Development of a Ground-Based Analog to the Advanced Resistive Exercise Device Aboard the International Space Station

    NASA Technical Reports Server (NTRS)

    Newby, Nathaniel J.; Scott-Pandorf, M. M.; Caldwell, E.; DeWitt, J.K.; Fincke, R.; Peters, B.T.

    2010-01-01

    NASA and Wyle engineers constructed a Horizontal Exercise Fixture (HEF) that was patented in 2006. Recently modifications were made to HEF with the goal of creating a device that mimics squat exercise on the Advanced Resistive Exercise Device (ARED) and can be used by bed rest subjects who must remain supine during exercise. This project posed several engineering challenges, such as how best to reproduce the hip motions (we used a sled that allowed hip motion in the sagittal plane), how to counterweight the pelvis against gravity (we used a pulley and free-weight mechanism), and how to apply large loads (body weight plus squat load) to the shoulders while simultaneously supporting the back against gravity (we tested a standard and a safety bar that allowed movement in the subject s z-axis, both of which used a retractable plate for back support). METHODS An evaluation of the HEF was conducted with human subjects (3F, 3M), who performed sets of squat exercises of increasing load from 10-repetition maximum (RM) up to 1-RM. Three pelvic counterweight loads were tested along with each of the two back-support squat bars. Data collection included 3-dimensional ground reaction forces (GRF), muscle activation (EMG), body motion (video-based motion capture), and subjective comments. These data were compared with previous ground-based ARED study data. RESULTS All subjects in the evaluation were able to perform low- to high-loading squats on the HEF. Four of the 6 subjects preferred a pelvic counterweight equivalent to 60 percent of their body weight. Four subjects preferred the standard squat bar, whereas 2 female subjects preferred the safety bar. EMG data showed muscle activation in the legs and low back typical of squat motion. GRF trajectories and eccentric-concentric loading ratios were similar to ARED. CONCLUSION: Squat exercise performed on HEF approximated squat exercise on ARED.

  15. Final LDRD report : design and fabrication of advanced device structures for ultra high efficiency solid state lighting.

    SciTech Connect

    Koleske, Daniel David; Bogart, Katherine Huderle Andersen; Shul, Randy John; Wendt, Joel Robert; Crawford, Mary Hagerott; Allerman, Andrew Alan; Fischer, Arthur Joseph

    2005-04-01

    The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.

  16. Ventricular Assist Device Implantation Corrects Myocardial Lipotoxicity, Reverses Insulin Resistance and Normalizes Cardiac Metabolism in Patients with Advanced Heart Failure

    PubMed Central

    Chokshi, Aalap; Drosatos, Konstantinos; Cheema, Faisal H.; Ji, Ruiping; Khawaja, Tuba; Yu, Shuiqing; Kato, Tomoko; Khan, Raffay; Takayama, Hiroo; Knöll, Ralph; Milting, Hendrik; Chung, Christine S.; Jorde, Ulrich; Naka, Yoshifumi; Mancini, Donna M.; Goldberg, Ira J.; Schulze, P. Christian

    2012-01-01

    Background Heart failure is associated with impaired myocardial metabolism with a shift from fatty acids to glucose utilization for ATP generation. We hypothesized that cardiac accumulation of toxic lipid intermediates inhibits insulin signaling in advanced heart failure and that mechanical unloading of the failing myocardium corrects impaired cardiac metabolism. Methods and Results We analyzed myocardium and serum of 61 patients with heart failure (BMI 26.5±5.1 kg/m2, age 51±12 years) obtained during left ventricular assist device (LVAD) implantation and at explantation (mean duration 185±156 days) and from 9 controls. Systemic insulin resistance in heart failure was accompanied by decreased myocardial triglyceride and overall fatty acid content but increased toxic lipid intermediates, diacylglycerol and ceramide. Increased membrane localization of protein kinase C isoforms, inhibitors of insulin signaling, and decreased activity of insulin signaling molecules Akt and FOXO, were detectable in heart failure compared to controls. LVAD implantation improved whole body insulin resistance (HOMA-IR: 4.5±0.6 to 3.2±0.5; p<0.05) and decreased myocardial levels of diacylglycerol and ceramide while triglyceride and fatty acid content remained unchanged. Improved activation of the insulin/PI3kinase/Akt signaling cascade after LVAD implantation was confirmed by increased phosphorylation of Akt and FOXO, which was accompanied by decreased membrane localization of protein kinase C isoforms after LVAD implantation. Conclusions Mechanical unloading after LVAD implantation corrects systemic and local metabolic derangements in advanced heart failure leading to reduced myocardial levels of toxic lipid intermediates and improved cardiac insulin signaling. PMID:22586279

  17. Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts

    PubMed Central

    Baik, Seung Su; Im, Seongil; Choi, Hyoung Joon

    2017-01-01

    Based on the first principles calculation, we investigate the electronic band structures of graphene-MoS2 and Ti-MoS2 heterojunctions under gate-voltages. By simultaneous control of external electric fields and carrier charging concentrations, we show that the graphene’s Dirac point position inside the MoS2 bandgap is easily modulated with respect to the co-varying Fermi level, while keeping the graphene’s linear band structure around the Dirac point. The easy modulation of graphene bands is not confined to the special cases where the conduction-band-minimum point of MoS2 and the Dirac point of graphene are matched up in reciprocal space, but is generalized to their dislocated cases. This flexibility caused by the strong decoupling between graphene and MoS2 bands enhances the gate-controlled switching performance in MoS2-graphene hybrid stacking-device. PMID:28358116

  18. Microfiber-based few-layer MoS2 saturable absorber for 2.5 GHz passively harmonic mode-locked fiber laser.

    PubMed

    Liu, Meng; Zheng, Xu-Wu; Qi, You-Li; Liu, Hao; Luo, Ai-Ping; Luo, Zhi-Chao; Xu, Wen-Cheng; Zhao, Chu-Jun; Zhang, Han

    2014-09-22

    We reported on the generation of high-order harmonic mode-locking in a fiber laser using a microfiber-based molybdenum disulfide (MoS(2)) saturable absorber (SA). Taking advantage of both the saturable absorption and large third-order nonlinear susceptibilities of the few-layer MoS(2), up to 2.5 GHz repetition rate HML pulse could be obtained at a pump power of 181 mW, corresponding to 369th harmonic of fundamental repetition frequency. The results provide the first demonstration of the simultaneous applications of both highly nonlinear and saturable absorption effects of the MoS(2), indicating that the microfiber-based MoS(2) photonic device could serve as high-performance SA and highly nonlinear optical component for application fields such as ultrafast nonlinear optics.

  19. Gap-mode enhancement on MoS2 probed by functionalized tip-enhanced Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Alajlan, Abdulrahman M.; Voronine, Dmitri V.; Sinyukov, Alexander M.; Zhang, Zhenrong; Sokolov, Alexei V.; Scully, Marlan O.

    2016-09-01

    Surface enhancement of molecular spectroscopic signals has been widely used for sensing and nanoscale imaging. Because of the weak electromagnetic enhancement of Raman signals on semiconductors, it is motivating but challenging to study the electromagnetic effect separately from the chemical effects. We report tip-enhanced Raman scattering measurements on Au and bulk MoS2 substrates using a metallic tip functionalized with copper phthalocyanine molecules and demonstrate similar gap-mode enhancement on both substrates. We compare the experimental results with theoretical calculations to confirm the gap-mode enhancement on MoS2 using a well-established electrostatic model. The functionalized tip approach allows for suppressing the background and is ideal for separating electromagnetic and chemical enhancement mechanisms on various substrates. Our results may find a wide range of applications in MoS2-based devices, sensors, and metal-free nanoscale bio-imaging.

  20. In Vivo and in Vitro Evaluations of Repeatability and Accuracy of VITA Easyshade® Advance 4.0 Dental Shade-Matching Device

    PubMed Central

    Illeš, Iva Ž.; Alajbeg, Maja; Žagar

    2015-01-01

    Objectives The objective of this study was to evaluate the intra-device repeatability and accuracy of dental shade-matching device (VITA Easyshade® Advance 4.0) using both in vitro and in vivo models. Materials and methods For the repeatability assessment, the in vivo model utilized shade-matching device to measure the central region of the labial surface of right maxillary central incisors of 10 people twice. The following tooth colors were measured: B1, A1, A2, A3, C1 and C3. The in vitro model included the same six Vitapan Classical tabs. Two measurements were made of the central region of each shade tab. For the accuracy assessment, each shade tab from 3 Vitapan Classical shade guides was measured once. CIE L*a*b* values were determined. Intraclass correlation coefficients (ICCs) were used to analyze the in vitro and in vivo intra-device repeatability of the shade-matching device. The difference between in vitro and in vivo models was analyzed. Accuracy of the device tested was calculated. Results The mean color differences for in vivo and in vitro models were 3.51 and 1.25 E units, respectively. The device repeatability ICCs for in vivo measurements ranged from 0.858 to 0.971 and for in vitro from 0.992 to 0.994. Accuracy of the device tested was 93.75%. Conclusion Within the limitations of the experiment, VITA Easyshade®Advance 4.0 dental shade-matching device enabled reliable and accurate measurement. It can be a valuable tool for the determination of tooth colours. PMID:27688393

  1. Stacking sequence dependent photo-electrocatalytic performance of CVD grown MoS2/graphene van der Waals solids

    NASA Astrophysics Data System (ADS)

    Biroju, Ravi K.; Pal, Shubhadeep; Sharma, Rahul; Giri, P. K.; Narayanan, Tharangattu N.

    2017-02-01

    New layered solids by the combinatorial stacking of different atomic layers are emanating as novel candidates for energy efficient devices. Here, sequentially stacked single layer graphene-molybdenum disulfide (MoS2) van der Waals (vdW) solids are demonstrated for their efficacy in the catalysis of hydrogen evolution reaction (HER), and importance of their stacking order in tuning the photo-electrocatalytic (PEC) efficiency is unraveled. Single layer graphene and a few layered MoS2 stacked vdW solids based transparent flexible electrodes were prepared, and a particular stacking sequence where top-graphene: bottom-MoS2/polydimethylsiloxane (PDMS) geometry (MSGR) exhibited the lowest onset and over potentials and a very high exchange current density (j 0 ∼ 245 ± 1 μA cm‑2) in acidic HER in comparison to the individual layers and other stacked configuration (MoS2 on top of graphene on PDMS, GRMS). The HER studies under dark and white light illuminations were conducted to explore the PEC responses of the devices. The augmented HER performance of MSGR is further confirmed from the charge transfer resistance measurements using electrochemical impedance spectroscopy. Role of graphene plasmonics and MoS2 to graphene electron transfer were studied, and this study unravels the importance of a new factor, stacking order of vdW layers, while designing novel devices from the layered solids.

  2. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates.

    PubMed

    Sercombe, D; Schwarz, S; Del Pozo-Zamudio, O; Liu, F; Robinson, B J; Chekhovich, E A; Tartakovskii, I I; Kolosov, O; Tartakovskii, A I

    2013-12-12

    Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and Si(x)N(y), improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.

  3. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

    PubMed Central

    Sercombe, D.; Schwarz, S.; Pozo-Zamudio, O. Del; Liu, F.; Robinson, B. J.; Chekhovich, E. A.; Tartakovskii, I. I.; Kolosov, O.; Tartakovskii, A. I.

    2013-01-01

    Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SixNy, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials. PMID:24336152

  4. Synthesis of MoS2 and MoO2 for their applications in H2 generation and lithium ion batteries: a review

    PubMed Central

    Zhao, Yufei; Zhang, Yuxia; Yang, Zhiyu; Yan, Yiming; Sun, Kening

    2013-01-01

    Scientists increasingly witness the applications of MoS2 and MoO2 in the field of energy conversion and energy storage. On the one hand, MoS2 and MoO2 have been widely utilized as promising catalysts for electrocatalytic or photocatalytic hydrogen evolution in aqueous solution. On the other hand, MoS2 and MoO2 have also been verified as efficient electrode material for lithium ion batteries. In this review, the synthesis, structure and properties of MoS2 and MoO2 are briefly summarized according to their applications for H2 generation and lithium ion batteries. Firstly, we overview the recent advancements in the morphology control of MoS2 and MoO2 and their applications as electrocatalysts for hydrogen evolution reactions. Secondly, we focus on the photo-induced water splitting for H2 generation, in which MoS2 acts as an important co-catalyst when combined with other semiconductor catalysts. The newly reported research results of the significant functions of MoS2 nanocomposites in photo-induced water splitting are presented. Thirdly, we introduce the advantages of MoS2 and MoO2 for their enhanced cyclic performance and high capacity as electrode materials of lithium ion batteries. Recent key achievements in MoS2- and MoO2-based lithium ion batteries are highlighted. Finally, we discuss the future scope and the important challenges emerging from these fascinating materials. PMID:27877584

  5. Synthesis of MoS2 and MoO2 for their applications in H2 generation and lithium ion batteries: a review.

    PubMed

    Zhao, Yufei; Zhang, Yuxia; Yang, Zhiyu; Yan, Yiming; Sun, Kening

    2013-08-01

    Scientists increasingly witness the applications of MoS2 and MoO2 in the field of energy conversion and energy storage. On the one hand, MoS2 and MoO2 have been widely utilized as promising catalysts for electrocatalytic or photocatalytic hydrogen evolution in aqueous solution. On the other hand, MoS2 and MoO2 have also been verified as efficient electrode material for lithium ion batteries. In this review, the synthesis, structure and properties of MoS2 and MoO2 are briefly summarized according to their applications for H2 generation and lithium ion batteries. Firstly, we overview the recent advancements in the morphology control of MoS2 and MoO2 and their applications as electrocatalysts for hydrogen evolution reactions. Secondly, we focus on the photo-induced water splitting for H2 generation, in which MoS2 acts as an important co-catalyst when combined with other semiconductor catalysts. The newly reported research results of the significant functions of MoS2 nanocomposites in photo-induced water splitting are presented. Thirdly, we introduce the advantages of MoS2 and MoO2 for their enhanced cyclic performance and high capacity as electrode materials of lithium ion batteries. Recent key achievements in MoS2- and MoO2-based lithium ion batteries are highlighted. Finally, we discuss the future scope and the important challenges emerging from these fascinating materials.

  6. Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2

    DOE PAGES

    Yamaguchi, Hisato; Blancon, Jean-Christophe; Kappera, Rajesh; ...

    2014-12-18

    A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towardsmore » the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.« less

  7. Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS2.

    PubMed

    Li, Zhongjun; Li, Xingxing; Yang, Jinlong

    2015-06-17

    Understanding the nature of the contacts in devices based on MoS2 with metal electrodes is vital to enhancing carrier injection efficiency. In this work, geometric and electronic structures of Sc and Ti contacts with MoS2 have been comparatively studied by first-principles calculations. The analyses of geometric parameters, charge density distributions, and density of states for the Sc and Ti top contacts with monolayer MoS2 (mMoS2) indicate that the interface bonding results in the localization of 4d states of Mo atoms and the consequent metallization of mMoS2. Therefore, the Sc and Ti top contacts with mMoS2 are Ohmic, and electron injections via these contacts are efficient. Because of the formations of the metalized Sc-mMoS2 and Ti-mMoS2 complexes, in the Sc and Ti top contacts with multilayer MoS2, Schottky interfaces may be formed in two contact regions. One is in the edge contacts of the Sc-mMoS2 and Ti-mMoS2 complexes with mMoS2 in the channel region in which Schottky barrier heights of 0.11 and 0.39 eV are extracted, respectively. The other is in the top contacts of these two complexes with mMoS2 under the contacts in which Schottky barrier heights of 0.15 and 0.34 eV are obtained, respectively. Moreover, as the layer number of MoS2 increases in the top contacts, the Schottky barrier heights show decreasing trends. These trends can be understood on the basis of the changes of electron affinity of multilayer MoS2. According to the present results, the device based on MoS2 with Sc electrodes should have better electron injection efficiency and stronger back-gated manipulation of current than the one with Ti electrodes. Furthermore, the electron injection efficiency can be enhanced by using multilayer MoS2. These predictions are generally consistent with recent experimental observations and provide a delicate understanding of the contacts in these devices.

  8. Devices Materials and Processes for Nanoelectronics: Characterization with Advanced X-Ray Techniques Using Lab-Based and Synchrotron Radiation Sources

    SciTech Connect

    E Zschech; C Wyon; C Murray; G Schneider

    2011-12-31

    Future nanoelectronics manufacturing at extraordinary length scales, new device structures, and advanced materials will provide challenges to process development and engineering but also to process control and physical failure analysis. Advanced X-ray techniques, using lab systems and synchrotron radiation sources, will play a key role for the characterization of thin films, nanostructures, surfaces, and interfaces. The development of advanced X-ray techniques and tools will reduce risk and time for the introduction of new technologies. Eventually, time-to-market for new products will be reduced by the timely implementation of the best techniques for process development and process control. The development and use of advanced methods at synchrotron radiation sources will be increasingly important, particularly for research and development in the field of advanced processes and new materials but also for the development of new X-ray components and procedures. The application of advanced X-ray techniques, in-line, in out-of-fab analytical labs and at synchrotron radiation sources, for research, development, and manufacturing in the nanoelectronics industry is reviewed. The focus of this paper is on the study of nanoscale device and on-chip interconnect materials, and materials for 3D IC integration as well.

  9. Compensating For Changes in MOS Sensors

    SciTech Connect

    Matzke, Brett D.

    2006-09-29

    AirAdvice provided the following introduction: “AirAdvice uses metal oxide semiconductor (MOS) sensors for measuring total volatile organic compounds (TVOC) in air. These sensors are incorporated into AirAdvice’s indoor air quality (IAQ) monitors. The IAQ monitors are designed so that they require annual calibration to maintain acceptable accuracy. Since the MOS TVOC sensors used in the monitors change in sensitivity with time and exposure to gases, AirAdvice has developed an algorithm-based process that automatically compensates for changes in the sensors. The proposed project is to have PNNL analyze data provided by AirAdvice with these objectives: (1) assess how effective AirAdvice’s automatic drift correction process is, (2) identify any problems in the process, and (3) propose improvements to the process.”

  10. Highly stretchable MoS2 kirigami.

    PubMed

    Hanakata, Paul Z; Qi, Zenan; Campbell, David K; Park, Harold S

    2016-01-07

    We report the results of classical molecular dynamics simulations focused on studying the mechanical properties of MoS2 kirigami. Several different kirigami structures were studied based upon two simple non-dimensional parameters, which are related to the density of cuts, as well as the ratio of the overlapping cut length to the nanoribbon length. Our key findings are significant enhancements in tensile yield (by a factor of four) and fracture strains (by a factor of six) as compared to pristine MoS2 nanoribbons. These results, in conjunction with recent results on graphene, suggest that the kirigami approach may be generally useful for enhancing the ductility of two-dimensional nanomaterials.

  11. Highly stretchable MoS2 kirigami

    NASA Astrophysics Data System (ADS)

    Hanakata, Paul Z.; Qi, Zenan; Campbell, David K.; Park, Harold S.

    2015-12-01

    We report the results of classical molecular dynamics simulations focused on studying the mechanical properties of MoS2 kirigami. Several different kirigami structures were studied based upon two simple non-dimensional parameters, which are related to the density of cuts, as well as the ratio of the overlapping cut length to the nanoribbon length. Our key findings are significant enhancements in tensile yield (by a factor of four) and fracture strains (by a factor of six) as compared to pristine MoS2 nanoribbons. These results, in conjunction with recent results on graphene, suggest that the kirigami approach may be generally useful for enhancing the ductility of two-dimensional nanomaterials.

  12. Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2.

    PubMed

    Wang, Wenyi; Klots, Andrey; Prasai, Dhiraj; Yang, Yuanmu; Bolotin, Kirill I; Valentine, Jason

    2015-11-11

    Recently, there has been much interest in the extraction of hot electrons generated from surface plasmon decay, as this process can be used to achieve additional bandwidth for both photodetectors and photovoltaics. Hot electrons are typically injected into semiconductors over a Schottky barrier between the metal and semiconductor, enabling generation of photocurrent with below bandgap photon illumination. As a two-dimensional semiconductor single and few layer molybdenum disulfide (MoS2) has been demonstrated to exhibit internal photogain and therefore becomes an attractive hot electron acceptor. Here, we investigate hot electron-based photodetection in a device consisting of bilayer MoS2 integrated with a plasmonic antenna array. We demonstrate sub-bandgap photocurrent originating from the injection of hot electrons into MoS2 as well as photoamplification that yields a photogain of 10(5). The large photogain results in a photoresponsivity of 5.2 A/W at 1070 nm, which is far above similar silicon-based hot electron photodetectors in which no photoamplification is present. This technique is expected to have potential use in future ultracompact near-infrared photodetection and optical memory devices.

  13. Critical Secondary Military Occupational Specialty (MOS) Study

    DTIC Science & Technology

    2002-12-20

    training/education options where a graduate degree is not required. (f) Assign SEP billet functions to GS civilians or contracted specialists where...education options where a graduate degree is not required • Assign SEP billet functions to GS civilians or contracted specialists where no requirement for...previously held PMOS 2502 or PMOS 4002 have been reclassified with PMOS 0602, Command and Control Systems Officer. • MOS 9973 . This is a temporary skill

  14. RF Plasma Annealing on MOS Structures.

    DTIC Science & Technology

    1981-12-01

    with =012 -1I LE = 0.03 eV and va - 1 sec , the calculated EM is 1.1 eV. As reported by many previous workers ( Fanet and Poirier 1974, DiMaria 1978...Butler, "Charge Trapping and Associated Luminescence in MOS Oxide Layers." Leigh University (1980). J. M. Fanet and R. Poirier, "Charge Storage in 5i02

  15. Modulation of Electronic Structure of Armchair MoS2 Nanoribbon.

    PubMed

    Zhang, Long; Wan, Langhui; Yu, Yunjin; Wang, Bin; Xu, Fuming; Wei, Yadong; Zhao, Yang

    2015-09-02

    We perform first-principles calculations on electronic structures of armchair MoS2 nanoribbons (AMoS2NRs) passivated by non-metal atoms. In contrast to bare AMoS2NR (AMoS2NR-bare) or purely hydrogen (H) edge-terminated AMoS2NR (AMoS2NR-H), it is found that H and oxygen (O) hybrid edge-terminated AMoS2NR (AMoS2NR-H-O) is more stable. AMoS2NR-H-O exhibits a direct band gap of about 1.43 eV, which is larger than those of pristine AMoS2NR (about 0.61 eV) and AMoS2NR-H (about 0.60 eV), and even exceeds the band gap of bulk MoS2 (about 0.86 eV) and is close to that of monolayer MoS2 (about 1.67 eV). The remarkable band gap of AMoS2NR-H-O is attributed to the charge redistribution on the edge atoms of MoS2 nanoribbon, especially the charges on the edge Mo atoms. Detailed calculations of AMoS2NR-H-O reveal that over 70% of the total density of states (DOS) of the conduction band minimum and the valence band maximum are contributed by the Mo atoms. In particular, edge Mo atoms play a crucial role in modulating the electronic structure. In addition, we have studied a series of functionalized AMoS2NR-H-X with X = S, F, C, N, and P, respectively. It is found that AMoS2NR-H-X with X = S, 2F, C possess remarkable electronic band gaps, while AMoS2NR-H-X with X = F, N, P are metallic. Our studies suggest that non-metal atom hybrid passivation can efficiently tune the electronic band gap of MoS2 nanoribbon and open a new route to obtain MoS2 based practical nanoelectronic device and photo¬voltaic device.

  16. Muscle Volume Increases Following 16 Weeks of Resistive Exercise Training with the Advanced Resistive Exercise Device (ARED) and Free Weights

    NASA Technical Reports Server (NTRS)

    Nash, R. E.; Loehr, J. A.; Lee, S. M. C.; English, K. L.; Evans, H.; Smith, S. A.; Hagan, R. D.

    2009-01-01

    Space flight-induced muscle atrophy, particularly in the postural and locomotorymuscles, may impair task performance during long-duration space missions and planetary exploration. High intensity free weight (FW) resistive exercise training has been shown to prevent atrophy during bed rest, a space flight analog. NASA developed the Advanced Resistive Exercise Device (ARED) to simulate the characteristics of FW exercise (i.e. constant mass, inertial force) and to be used as a countermeasure during International Space Station (ISS) missions. PURPOSE: To compare the efficacy of ARED and FW training to induce hypertrophy in specific muscle groups in ambulatory subjects prior to deploying ARED on the ISS. METHODS: Twenty untrained subjects were assigned to either the ARED (8 males, 3 females) or FW (6 males, 3 females) group and participated in a periodizedtraining protocol consisting of squat (SQ), heel raise (HR), and deadlift(DL) exercises 3 d wk-1 for 16 wks. SQ, HR, and DL muscle strength (1RM) was measured before, after 8 wks, and after 16 wks of training to prescribe exercise and measure strength changes. Muscle volume of the vastigroup (V), hamstring group (H), hip adductor group (ADD), medial gastrocnemius(MG), lateral gastrocnemius(LG), and deep posterior muscles including soleus(DP) was measured using MRI pre-and post-training. Consecutive cross-sectional images (8 mm slices with a 2 mm gap) were analyzed and summed. Anatomical references insured that the same muscle sections were analyzed pre-and post-training. Two-way repeated measures ANOVAs (p<0.05) were used to test for differences in muscle strength and volume between training devices. RESULTS: SQ, HR, and DL 1RM increased in both FW (SQ: 49+/-6%, HR: 12+/-2%, DL: 23+/-4%) and ARED (SQ: 31+/-4%, HR: 18+/-2%, DL: 23+/-3%) groups. Both groups increased muscle volume in the V (FW: 13+/-2%, ARED: 10+/-2%), H (FW: 3+/-1%, ARED: 3+/-1 %), ADD (FW: 15=/-2%, ARED: 10+/-1%), LG (FW: 7+/-2%, ARED: 4+/-1%), MG (FW

  17. Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

    SciTech Connect

    Haider, F. A. Chee, F. P. Abu Hassan, H.; Saafie, S.; Afishah, A.

    2016-01-22

    Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.

  18. Thermo-mechanical analysis of fixed mask 1 for the Advanced Photon Source insertion device front ends

    SciTech Connect

    Nian, H.L.T.; Shu, D.; Sheng, I.C.A.; Kuzay, T.M.

    1993-10-01

    The first fixed mask (FM1) is one of the critical elements on the insertion device front ends of the beamlines at the Advanced Photon Source (APS) now under construction at Argonne National Laboratory (ANL). The heat flux from the APS undulators is enormous. For example, FM1 placed at a distance of 16 m from the Undulator A source will be subjected to 519 W/mm{sup 2} at normal incidence with a total power of 3.8 kW. Due to a high localized thermal gradient on this component, inclined geometry (1.5{degree}) is used in the design to spread the footprint of the x-ray beam. A box-cone-shape geometry was designed due to the limited space available in the front end. The box shape is a highly constrained geometry, which induces larger stress levels than would occur in a plate or a tube. In order to handle the expected higher stress and the stress concentration at the corners, a single Glidcop block (rather than copper) was used in the construction. The FM1 uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm{sup 2}{center_dot}{degree}C with single-phase water as the coolant. The authors simulated the location of the x-ray beam in several places to cover the worst possible case. The maximum temperature (about 180{degree}C) occurs when the beam hits the center of horizontal surface. The maximum effective stress (about 313 MPa) occurs when the x-ray beam hits about the corners.

  19. Transposon-Assisted Genetic Engineering with Mos1-Mediated Single-Copy Insertion (MosSCI).

    PubMed

    Frøkjær-Jensen, Christian

    2015-01-01

    Transgenesis in model organisms is necessary to determine the function, expression, and subcellular localization of gene products. In Caenorhabditis elegans, injected DNA can be propagated as multicopy extrachromosomal arrays but transgenes in arrays are mosaic, over-expressed in some tissues and silenced in the germline. Here, a method to insert a transgene into a specific genomic location called Mos1-mediated single-copy insertion (MosSCI) is described. Single-copy insertion allows transgene expression at levels that approximate endogenous gene expression as well as expression in the germline.

  20. An Approach To Fabricate PDMS Encapsulated All-Solid-State Advanced Asymmetric Supercapacitor Device with Vertically Aligned Hierarchical Zn-Fe-Co Ternary Oxide Nanowire and Nitrogen Doped Graphene Nanosheet for High Power Device Applications.

    PubMed

    Maitra, Anirban; Das, Amit Kumar; Bera, Ranadip; Karan, Sumanta Kumar; Paria, Sarbaranjan; Si, Suman Kumar; Khatua, Bhanu Bhusan

    2017-02-22

    We highlight the design and fabrication of a polydimethylsiloxane (PDMS) encapsulated advanced all-solid-state asymmetric supercapacitor (ASC) device consisting of hierarchical mesoporous zinc-iron-cobalt ternary oxide (ZICO) nanowire coated nickel (Ni) foam (ZICO@Ni foam) as a promising positive electrode and nitrogen doped graphene coated Ni foam (N-G@Ni foam) as negative electrode in the presence of PVA-KOH gel electrolyte. Owing to outstanding electrochemical behavior and ultrahigh specific capacitance of ZICO (≈ 2587.4 F/g at 1 A/g) and N-G (550 F/g at 1 A/g) along with their mutual synergistic outputs, the assembled all-solid-state ASC device exhibits an outstanding energy density of ≈40.5 Wh/kg accompanied by a remarkable long-term cycle stability with ≈95% specific capacitance retention even after 5000 charge-discharge cycles. The exclusive hierarchical ZICO nanowires were synthesized by a facile two-step process comprising of a hydrothermal protocol followed by an annealing treatment on a quartz substrate. While Zn(2+) gives the stability of the oxide system, Fe and Co ions provide better electronic conductivity and capacitive response under vigorous cyclic condition. The extraordinary performance of as-fabricated ASC device resembles its suitability for the construction of advanced energy storage devices in modern electronic industries.

  1. Transport properties of chemically synthesized MoS2 - Dielectric effects and defects scattering

    NASA Astrophysics Data System (ADS)

    Mongillo, Massimo; Chiappe, Daniele; Arutchelvan, Goutham; Asselberghs, Inge; Perucchini, Marta; Manfrini, Mauricio; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana

    2016-12-01

    We report on the electrical characterization of synthetic, large-area MoS2 layers obtained by the sulfurization technique. The effects of dielectric encapsulation and localized defect states on the intrinsic transport properties are explored with the aid of temperature-dependent measurements. We study the effect of dielectric environment by transferring as-grown MoS2 films into different dielectrics such as SiO2, Al2O3, HfO2, and ZrO2 with increasing dielectric permittivity. Electrical data are collected on a statistically-relevant device ensemble and allow to assess device performances on a large scale assembly. Our devices show relative in-sensitiveness of mobility with respect to dielectric encapsulation. We conclude that the device behavior is strongly affected by several scattering mechanisms of different origin that can completely mask any effect related to dielectric mismatch. At low temperatures, conductivity of the devices is thermally activated, a clear footprint of the existence of a mobility edge separating extended states in the conduction band from impurity states in the band-gap.

  2. Electronic properties and transistors of the NbS2-MoS2-NbS2 nanoribbon heterostructure.

    PubMed

    Liu, Qi; OuYang, Fangping; Yang, Zhixiong; Peng, Shenglin; Zhou, Wenzhe; Zou, Hui; Long, Mengqiu; Pan, Jiangling

    2016-12-13

    Based on density function theory(DFT) and nonequilibrium Green's functions(NEGF), we construct a NbS2-MoS2-NbS2 nanoribbon inplane heterostructure. The effects of the channel length, width, chirality and vacancy of the heterostructure on the transport properties are systematically investigated. The electron transport of the armchair-edge heterostructure device shows ballistic transport properties, while the zigzag-edge heterostructure device exhibits resonance tunneling transport properties. Further study indicates the NbS2-MoS2-NbS2 field effect transistors(FETs) to be excellent ambipolar transistors. The FETs have high performances with current on/off ratio 4.7×10(5) and subthreshold swing 90mV/decade with the channel length m=16 and width n=6. The increase of the channel length will sharply reduce the off-state current and enhance the performances of the devices significantly.

  3. Electronic properties and transistors of the NbS2-MoS2-NbS2 NR heterostructure

    NASA Astrophysics Data System (ADS)

    Liu, Qi; Ouyang, Fangping; Yang, Zhixiong; Peng, Shenglin; Zhou, Wenzhe; Zou, Hui; Long, Mengqiu; Pan, Jiangling

    2017-02-01

    Based on density function theory and nonequilibrium Green’s functions, we construct a NbS2-MoS2-NbS2 NR inplane heterostructure. The effects of channel length, width, chirality and vacancy of the heterostructure on transport properties are systematically investigated. The electron transport of the armchair-edge heterostructure device shows ballistic transport properties, while the zigzag-edge heterostructure device exhibits resonance tunneling transport properties. Further study indicates NbS2-MoS2-NbS2 field effect transistors (FETs) to be excellent ambipolar transistors. The FETs have high performances with current on/off ratio 4.7 × 105 and subthreshold swing 90 mV/decade with channel length m = 16 and width n = 6. Increases in the channel length sharply reduce the off-state current and enhance the performance of the devices significantly.

  4. Novel near-infrared emission from crystal defects in MoS2 multilayer flakes.

    PubMed

    Fabbri, F; Rotunno, E; Cinquanta, E; Campi, D; Bonnini, E; Kaplan, D; Lazzarini, L; Bernasconi, M; Ferrari, C; Longo, M; Nicotra, G; Molle, A; Swaminathan, V; Salviati, G

    2016-10-04

    The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS2 flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS2 indirect bandgap emission.

  5. Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

    PubMed Central

    Fabbri, F.; Rotunno, E.; Cinquanta, E.; Campi, D.; Bonnini, E.; Kaplan, D.; Lazzarini, L.; Bernasconi, M.; Ferrari, C.; Longo, M.; Nicotra, G.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-01-01

    The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS2 flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS2 indirect bandgap emission. PMID:27698425

  6. Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures

    DTIC Science & Technology

    1991-12-01

    AD-A243 531IIII!IIHUHllAlll| DTIC Annual Letter Report EL Vr DECA S C Research and Development on Advanced Silicon Carbide Thin Film Growth...Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide -Based Device Structures Supported under Grant #N00014-88-K-0341/P00002 Office...Letter l/,1- 2 3 lj9 l 4. TITLE AND SUBTITLE Research and Develp~nt on Advanced S. FUNDING NUMBERS Silicon Carbide Thin Film .Growth Techniques and R&T

  7. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    PubMed

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm(2) V(-1) s(-1) , respectively. The ambipolar behavior is explained based on the band alignment of MoS2 and rubrene. Furthermore, being a building block, the MoS2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.

  8. Enhanced saturation current sensitivities to charge trapping and illumination in MOS tunnel diode by inserting metal in gate dielectric

    NASA Astrophysics Data System (ADS)

    Chen, Jun-Yao; Kao, Wei-Chih; Hwu, Jenn-Gwo

    2016-06-01

    The enlarged two-state phenomenon in the current-voltage (I-V) characteristic of metal-oxide-semiconductor (MOS) tunnel diode (TD) after negative/positive constant voltage stress (negative/positive CVS) was investigated. It was found that the reverse saturation tunnel current of MOS TD is proportional to the Schottky barrier height of holes, which is determined by the intensity of fringing field (FF) at device edge. With the aid of high permittivity dielectric and screening effect by embedded metal in the MOS structure, the FF was enhanced, which was confirmed by TCAD simulations. Because of the FF enhancement, after proper electrical treatments of voltage stressing, the intensified quantity of electron trapping/de-trapping was found at device edge, which augmented the modulation of Schottky barrier height of holes. As a result, much variation of reverse saturation tunnel current was exhibited, and hence, the enlarged two-state behavior was achieved. The endurance characteristics were also demonstrated to show that the trapped electrons are more stable in the MOS structure with embedded aluminum. Moreover, benefited from FF enhancement, the enlarged photosensitivity of the I-V characteristics of the sample with high permittivity dielectric and embedded aluminum was obtained. The mechanisms of the enlarged split of current behaviors after suitable CVS and illumination treatments are also discussed for these observations.

  9. Ab initio simulation of single- and few-layer MoS2 transistors: Effect of electron-phonon scattering

    NASA Astrophysics Data System (ADS)

    Szabó, Áron; Rhyner, Reto; Luisier, Mathieu

    2015-07-01

    In this paper, we present full-band atomistic quantum transport simulations of single- and few-layer MoS2 field-effect transistors (FETs) including electron-phonon scattering. The Hamiltonian and the electron-phonon coupling constants are determined from ab initio density-functional-theory calculations. It is observed that the phonon-limited electron mobility is enhanced with increasing layer thicknesses and decreases at high charge concentrations. The electrostatic control is found to be crucial even for a single-layer MoS2 device. With a single-gate configuration, the double-layer MoS2 FET shows the best intrinsic performance with an ON current, ION=685 μ A /μ m , but with a double-gate contact the transistor with a triple-layer channel delivers the highest current with ION=1850 μ A /μ m . The charge in the channel is almost independent of the number of MoS2 layers, but the injection velocity increases significantly with the channel thickness in the double-gate devices due to the reduced electron-phonon scattering rates in multilayer structures. We demonstrate further that the ballistic limit of transport is not suitable for the simulation of MX 2 FETs because of the artificial negative differential resistance it predicts.

  10. Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer

    NASA Astrophysics Data System (ADS)

    Yoo, Geonwook; Hong, Seongin; Heo, Junseok; Kim, Sunkook

    2017-01-01

    Using thin sub-stoichiometric molybdenum trioxide (MoOx, x < 3) overlayer, we demonstrate over 20-folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The fabricated device exhibits field-effect mobility (μFE) of up to 41.4 cm2/V s and threshold voltage (VTH) of -9.3 V, which is also modulated by the MoOx overlayer. The MoOx layer (˜25 nm), commonly known for a high work function (˜6.8 eV) material with a band gap of ˜3 eV, is evaporated on top of the MoS2 channel and confirmed by the transmission electron microscope analysis. The electrical and optical modulation effects are associated with interfacial charge transfer and thus an induced built-in electric field at the MoS2/MoOx interface. The results show that high work function MoOx can be a promising heterostructure material in order to enhance the photoresponse characteristics of MoS2-based devices.

  11. Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory

    NASA Astrophysics Data System (ADS)

    Kang, Minji; Kim, Yeong-A.; Yun, Jin-Mun; Khim, Dongyoon; Kim, Jihong; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

    2014-10-01

    In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the lithium intercalation method and were deposited as nano-floating gates between polystyrene and poly(methyl methacrylate), used as bilayered gate dielectrics, by a simple spin-coating and low temperature (<150 °C) process. In the developed OFET memory devices, electrons could be trapped/detrapped in the MoS2 nano-floating gates by modulating the charge carrier density in the active channel through gate bias control. Optimal memory characteristics were achieved by controlling the thickness and concentration of few-layered MoS2 nanoflakes, and the best device showed reliable non-volatile memory properties: a sufficient memory window of ~23 V, programming-reading-erasing cycling endurance of >102 times, and most importantly, quasi-permanent charge-storing characteristics, i.e., a very long retention time (longer than the technological requirement of commercial memory devices (>10 years)). In addition, we successfully developed multilevel memory cells (2 bits per cell) by controlling the gate bias magnitude.In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the lithium intercalation method and were deposited as nano-floating gates between polystyrene and poly(methyl methacrylate), used as bilayered gate dielectrics, by a simple spin-coating and

  12. Accelerating tomorrow's opto-electronic technologies: a comprehensive introduction to advanced optoelectronic materials and devices in the National Hi-Tech R&D Plan (863-Plan)

    NASA Astrophysics Data System (ADS)

    Jiang, Shan; Chen, Haoming; Ren, Xiaomin; Wang, Zhigong; Qian, Longsheng; Zhang, Rong; Feng, Songlin; Yang, Hui; Xu, Ningsheng

    2004-05-01

    The National Hi-Tech R&D Program (the 863-Program) is to enhance China's international competitiveness and improve China's overall capability of R&D in high technology and to bridge the gap between the laboratory and the marketplace. Advanced Optoelectronic Materials and Devices are one of the technology areas strategically important to China's information industry. It has been one of the major priority research fields funded by the 863 Program even since 1987 when the plan was first initiated. From the viewpoint of Priority Expert Group (PEG), this paper will give a comprehensive introduction to advanced optoelectronic materials and devices in the national 863-Program during the current five years period (up to 2005) which includes the main aims and goals and especially the main content of each subject.

  13. Pilot Investigation into the Ruggedized Advanced Pathogen Detection Device (R.A.P.I.D.) for Dengue Detection in East Timor

    DTIC Science & Technology

    2003-06-01

    were modified for real - time PCR using a LightCycler. Two reporter fluorochromes, the double stranded DNA specific dye SYBR Green I, and 6-hydroxy...fluorescein conjugated to TaqMan DNA probes, were employed to detect positive reactions. Following optimisation of the assays for real - time PCR , portable... real - time PCR equipment, the Ruggedized Advanced Pathogen Detection Device (R.A.P.I.D.(trademark)), was deployed to East Timor and a field trial was

  14. Recent advances in polymer solar cells: realization of high device performance by incorporating water/alcohol-soluble conjugated polymers as electrode buffer layer.

    PubMed

    He, Zhicai; Wu, Hongbin; Cao, Yong

    2014-02-01

    This Progress Report highlights recent advances in polymer solar cells with special attention focused on the recent rapid-growing progress in methods that use a thin layer of alcohol/water-soluble conjugated polymers as key component to obtain optimized device performance, but also discusses novel materials and device architectures made by major prestigious institutions in this field. We anticipate that due to drastic improvements in efficiency and easy utilization, this method opens up new opportunities for PSCs from various material systems to improve towards 10% efficiency, and many novel device structures will emerge as suitable architectures for developing the ideal roll-to-roll type processing of polymer-based solar cells.

  15. In Vivo Evaluations of Inter-Observer Reliability Using VITA Easyshade® Advance 4.0 Dental Shade-Matching Device

    PubMed Central

    KNEZOVIĆ, Dubravka; ZLATARIĆ, Davor; Illeš, Iva Ž.; Alajbeg, Maja; Žagar

    2016-01-01

    Objectives The aim of this study was to evaluate the inter-observer reliability of dental shade-matching device using an in vivo model. Materials and methods Four observers who were well trained in color assessment and handling of the dental shade-matching device determined teeth color and CIE-Lab values on maxillary right central incisors in 10 patients with completely healthy and intact dentitions. VITA Easyshade® Advance 4.0 shade-matching device was utilized to measure the central region of the labial surface of all investigated teeth, twice by each observer. The inter-observer reliability of the measurements was observed and deviations between Lab and ∆E values between the observers were calculated. Intraclass correlation coefficients (ICCs) were used to analyze inter-observer reliability. Results One-way ANOVA showed no statistically significant differences in color measurement of four observers in all the measured values (p>0.05). Delta E values ranged from 3.018 to 5.234. Although some small differences existed, statistically significant differences between the observers were not found (p>0.05). Inter-observer ICCs were very high for all observers (from 0.651 to 0.992). Conclusion Inter-examiner reliability of measurements using VITA Easyshade® Advance 4.0 shade-matching device was acceptable. Apart from the digital equipment, a well trained observer seems to be crucial in order to achieve correct dental color measurement. PMID:27688424

  16. MoS2 Surface Structure Tailoring via Carbonaceous Promoter

    PubMed Central

    Shi, Yumeng; Li, Henan; Wong, Jen It; Zhang, Xiaoting; Wang, Ye; Song, Huaihe; Yang, Hui Ying

    2015-01-01

    Atomically thin semiconducting transition-metal dichalcogenides have been attracting lots of attentions, particularly, molybdenum disulfide (MoS2) monolayers show promising applications in field effect transistors, optoelectronics and valleytronics. However, the controlled synthesis of highly crystalline MoS2 remain a challenge especially the systematic approach to manipulate its structure and morphology. Herein, we report a method for controlled synthesis of highly crystalline MoS2 by using chemical vapor deposition method with carbonaceous materials as growth promoter. A uniform and highly crystalline MoS2 monolayer with the grain size close to 40 μm was achieved. Furthermore, we extend the method to the manipulation of MoS2 morphology, flower-shape vertical grown MoS2 layers were obtained on growth promoting substrates. This simple approach allows an easy access of highly crystalline MoS2 layers with morphology tuned in a controllable manner. Moreover, the flower-shape MoS2 grown on graphene oxide film used as an anode material for lithium-ion batteries showed excellent electrochemical performance. PMID:25994238

  17. MOS 2.0: The Next Generation in Mission Operations Systems

    NASA Technical Reports Server (NTRS)

    Bindschadler, Duane L.; Boyles, Carole A.; Carrion, Carlos; Delp, Chris L.

    2010-01-01

    A Mission Operations System (MOS) or Ground System constitutes that portion of an overall space mission Enterprise that resides here on Earth. Over the past two decades, technological innovations in computing and software technologies have allowed an MOS to support ever more complex missions while consuming a decreasing fraction of Project development budgets. Despite (or perhaps, because of) such successes, it is routine to hear concerns about the cost of MOS development. At the same time, demand continues for Ground Systems which will plan more spacecraft activities with fewer commanding errors, provide scientists and engineers with more autonomous functionality, process and manage larger and more complex data more quickly, all while requiring fewer people to develop, deploy, operate and maintain them. One successful approach to such concerns over this period is a multimission approach, based on the reuse of portions (most often software) developed and used in previous missions. The Advanced Multi-Mission Operations System (AMMOS), developed for deep-space science missions, is one successful example of such an approach. Like many computing-intensive systems, it has grown up in a near-organic fashion from a relatively simple set of tools into a complexly interrelated set of capabilities. Such systems, like a city lacking any concept of urban planning, can and will grow in ways that are neither efficient nor particularly easy to sustain. To meet the growing demands and unyielding constraints placed on ground systems, a new approach is necessary. Under the aegis of a multi-year effort to revitalize the AMMOS's multimission operations capabilities, we are utilizing modern practices in systems architecting and model-based engineering to create the next step in Ground Systems: MOS 2.0. In this paper we outline our work (ongoing and planned) to architect and design a multimission MOS 2.0, describe our goals and measureable objectives, and discuss some of the benefits

  18. Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel

    NASA Astrophysics Data System (ADS)

    Friedman, Adam L.; Perkins, F. Keith; Hanbicki, Aubrey T.; Culbertson, James C.; Campbell, Paul M.

    2016-06-01

    Ultra-thin transition metal dichalcogenides (TMDs) films show remarkable potential for use in chemical vapor sensing devices. Electronic devices fabricated from TMD films are inexpensive, inherently flexible, low-power, amenable to industrial-scale processing because of emergent growth techniques, and have shown high sensitivity and selectivity to electron donor analyte molecules important for explosives and nerve gas detection. However, for devices reported to date, the conductance response to chemical vapors is dominated by Schottky contacts, to the detriment of the sensitivity, selectivity, recovery, and obscuring their intrinsic behavior. Here, we use contact engineering to transition the contacts in a MoS2 FET-based chemical vapor sensor to the 1T conducting phase, while leaving the channel in the 2H semiconducting state, and thus providing Ohmic contacts to the film. We demonstrate that the resultant sensors have much improved electrical characteristics, are more selective, and recover fully after chemical vapor exposure--all major enhancements to previously MoS2 sensor devices. We identify labile nitrogen-containing electron donors as the primary species that generate a response in MoS2, and we study the dynamics of the sensing reactions, identifying two possible qualitative models for the chemical sensing reaction.

  19. Solution-processed, hybrid 2D/3D MoS2/Si heterostructures with superior junction characteristics

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Biswas, S.; Das, S.; Ray, S. K.

    2017-03-01

    We report a theoretical and experimental investigation of the hybrid heterostructure interfaces between atomically thin MoS2 nanocrystals (NCs) on Si platform for their potential applications towards next-generation electrical and optical devices. Mie theory-based numerical analysis and COMSOL simulations based on the finite element method have been utilized to study the optical absorption characteristics and light–matter interactions in variable-sized MoS2 NCs. The size-dependent absorption characteristics and the enhancement of electric field of the heterojunction in the UV-visible spectral range agree well with the experimental results. A lithography-free, wafer-scale, 2D material on a 3D substrate hybrid vertical heterostructure has been fabricated using colloidal n-MoS2 NCs on p-Si. The fabricated p-n heterojunction exhibited excellent junction characteristics with a high rectification ratio suitable for voltage clipper and rectifier applications. The current–voltage characteristics of the devices under illumination have been performed in the temperature range of 10–300 K. The device exhibits a high photo-to-dark current ratio of ∼3 × 103 and a responsivity comparable to a commercial Si photodetector. The excellent heterojunction characteristics demonstrate the great potential of MoS2 NC-based hybrid electronic and optoelectronic devices in the near future.

  20. Solution-processed, hybrid 2D/3D MoS2/Si heterostructures with superior junction characteristics.

    PubMed

    Mukherjee, S; Biswas, S; Das, S; Ray, S K

    2017-03-01

    We report a theoretical and experimental investigation of the hybrid heterostructure interfaces between atomically thin MoS2 nanocrystals (NCs) on Si platform for their potential applications towards next-generation electrical and optical devices. Mie theory-based numerical analysis and COMSOL simulations based on the finite element method have been utilized to study the optical absorption characteristics and light-matter interactions in variable-sized MoS2 NCs. The size-dependent absorption characteristics and the enhancement of electric field of the heterojunction in the UV-visible spectral range agree well with the experimental results. A lithography-free, wafer-scale, 2D material on a 3D substrate hybrid vertical heterostructure has been fabricated using colloidal n-MoS2 NCs on p-Si. The fabricated p-n heterojunction exhibited excellent junction characteristics with a high rectification ratio suitable for voltage clipper and rectifier applications. The current-voltage characteristics of the devices under illumination have been performed in the temperature range of 10-300 K. The device exhibits a high photo-to-dark current ratio of ∼3 × 10(3) and a responsivity comparable to a commercial Si photodetector. The excellent heterojunction characteristics demonstrate the great potential of MoS2 NC-based hybrid electronic and optoelectronic devices in the near future.

  1. Band engineering of MoS2/stanene heterostructure: strain and electrostatic gating.

    PubMed

    Xiong, Wenqi; Xia, Congxin; Du, Juan; Wang, Tianxing; Peng, Yuting; Wei, Zhongming; Li, Jingbo

    2017-03-23

    As a fast developing field, van der Waals (vdW) heterostructure can overcome the weakness of single two-dimensional (2D) layered material and extend its electronic and optoelectronic applications. Through first-principles methods, the studied MoS2/stanene heterostructure preserves high-speed carrier characteristics and opens the direct band gap. Meanwhile, the band alignment shows that the electrons transfer from stanene to MoS2, which forms an internal electric field. As an effective strategy, the out-of-plane strain remarkably change the band gaps of heterostructure and enhances its carrier concentration. In addition, the combined effects of internal and external electric field can further open the band gaps and induce the direct-to-indirect gap transition in heterostructure. More interestingly, when the external electric field is equal to reverse internal one, the heterostructure regains a Dirac cone. Our results show that the MoS2/stanene heterostructure have the potential applications in highspeed optoelectronic devices.

  2. Exciton-dominated dielectric function of atomically thin MoS2 films

    DOE PAGES

    Yu, Yiling; Yu, Yifei; Cai, Yongqing; ...

    2015-11-24

    We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function maymore » dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.« less

  3. Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system.

    PubMed

    Barranca, Mario Alfredo Reyes; Mendoza-Acevedo, Salvador; Flores-Nava, Luis M; Avila-García, Alejandro; Vazquez-Acosta, E N; Moreno-Cadenas, José Antonio; Casados-Cruz, Gaspar

    2010-01-01

    Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe(2)O(3) layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

  4. Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

    PubMed Central

    Barranca, Mario Alfredo Reyes; Mendoza-Acevedo, Salvador; Flores-Nava, Luis M.; Avila-García, Alejandro; Vazquez-Acosta, E. N.; Moreno-Cadenas, José Antonio; Casados-Cruz, Gaspar

    2010-01-01

    Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane. PMID:22163478

  5. Direct Measurement of the Tunable Electronic Structure of Bilayer MoS 2 by Interlayer Twist

    DOE PAGES

    Yeh, Po-Chun; Jin, Wencan; Zaki, Nader; ...

    2016-01-13

    We measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2), using angle-resolved photoemission on micrometer-scale sample areas. Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (more » $$\\bar{Γ}$$ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ~40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at $$\\bar{Γ}$$ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. Furthermore, the electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.« less

  6. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    PubMed

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes.

  7. Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

    PubMed Central

    Khan, Muhammad Farooq; Nazir, Ghazanfar; lermolenko, Volodymyr M.; Eom, Jonghwa

    2016-01-01

    Abstract The electrical and photo-electrical properties of exfoliated MoS2 were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N2 gas, air, and O2 gas). We examined the effects of environmental gases on MoS2 flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E1 2 g and A1 g) position in the presence of N2 and O2 gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS2 field-effect transistors (FETs) remained almost the same in vacuum and N2 gas but shifted toward positive gate voltages in air or O2 gas because of the adsorption of oxygen atoms/molecules on the MoS2 surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS2 FETs under various environmental conditions. All parameters were improved in their performances in N2 gas, but deteriorated in O2 gas environment. The photocurrent decayed with a large time constant in N2 gas, but decayed with a small time constant in O2 gas. We also investigated the characteristics of the devices after passivating by Al2O3 film on the MoS2 surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS2-based integrated optoelectronic circuits, light sensing devices, and solar cells. PMID:27877867

  8. The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

    PubMed Central

    Yang, Wen; Sun, Qing-Qing; Geng, Yang; Chen, Lin; Zhou, Peng; Ding, Shi-Jin; Zhang, David Wei

    2015-01-01

    The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one of the principle problems in MoS2 based transistors. In this work, we demonstrate sub-10 nm uniform deposition of Al2O3 on MoS2 basal plane by applying ultra-low energy remote oxygen plasma pretreatment prior to atomic layer deposition. It is demonstrated that oxygen species in ultra-low energy plasma are physically adsorbed on MoS2 surfaces without making the flakes oxidized, and is capable of benefiting the mobility of MoS2 flake. Based on this method, top-gated MoS2 transistor with ultrathin Al2O3 dielectric is fabricated. With 6.6 nm Al2O3 as gate dielectric, the device shows gate leakage about 0.1 pA/μm2 at 4.5 MV/cm which is much lower than previous reports. Besides, the top-gated device shows great on/off ratio of over 108, subthreshold swing (SS) of 101 mV/dec and a mobility of 28 cm2/Vs. With further investigations and careful optimizations, this method can play an important role in future nanoelectronics. PMID:26146017

  9. Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates.

    PubMed

    Liu, Xi; Chai, Yang; Liu, Zhaojun

    2017-04-21

    With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2 transistors with a high on/off ratio using ZrO2 as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 10(8), a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm(2) V(-1) s(-1). Compared to the MoS2 devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2 dielectrics, the MoS2 transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2 is a good candidate for low power electronics.

  10. Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates

    NASA Astrophysics Data System (ADS)

    Liu, Xi; Chai, Yang; Liu, Zhaojun

    2017-04-01

    With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2 transistors with a high on/off ratio using ZrO2 as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 108, a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm2 V‑1 s‑1. Compared to the MoS2 devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2 dielectrics, the MoS2 transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2 is a good candidate for low power electronics.

  11. Chemistry of MOS-LSI radiation hardening

    NASA Technical Reports Server (NTRS)

    Grunthaner, P.

    1985-01-01

    The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

  12. On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

    NASA Astrophysics Data System (ADS)

    Habaš, Predrag; Selberherr, Siegfried

    1990-12-01

    A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C- V characteristic is quantitatively studied. The calculations show a considerable degradation of the inversion layer charge due to the voltage drop in the gate, especially in thin oxide devices. The calculated quasi-static C- V curves agree with the recently published data of implanted gate devices.

  13. Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

    PubMed Central

    Han, Sang Wook; Park, Youngsin; Hwang, Young Hun; Jekal, Soyoung; Kang, Manil; Lee, Wang G.; Yang, Woochul; Lee, Gun-Do; Hong, Soon Cheol

    2016-01-01

    1 T phase incorporation into 2H-MoS2 via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2 surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2 surface provides suitable ways for the low-dimensional device applications. PMID:27974834

  14. Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

    NASA Astrophysics Data System (ADS)

    Han, Sang Wook; Park, Youngsin; Hwang, Young Hun; Jekal, Soyoung; Kang, Manil; Lee, Wang G.; Yang, Woochul; Lee, Gun-Do; Hong, Soon Cheol

    2016-12-01

    1 T phase incorporation into 2H-MoS2 via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2 surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2 surface provides suitable ways for the low-dimensional device applications.

  15. Drug-induced sleep endoscopy as a selection tool for mandibular advancement therapy by oral device in patients with mild to moderate obstructive sleep apnoea.

    PubMed

    De Corso, E; Bastanza, G; Della Marca, G; Grippaudo, C; Rizzotto, G; Marchese, M R; Fiorita, A; Sergi, B; Meucci, D; Di Nardo, W; Paludetti, G; Scarano, E

    2015-12-01

    Nowadays oral appliance therapy is recognised as an effective therapy for many patients with primary snoring and mild to moderate obstructive sleep apnoea (OSA), as well as those with more severe OSA who cannot tolerate positive airway pressure (PAP) therapies. For this reason, it is important to focus on objective criteria to indicate which subjects may benefit from treatment with a mandibular advancement device (MAD). Various anthropometric and polysomnographic predictors have been described in the literature, whereas there are still controversies about the role of drug-induced sleep endoscopy (DISE) and advancement bimanual manoeuvre as predictor factors of treatment outcome by oral device. Herein, we report our experience in treatment of mild moderate OSA by oral appliance selected by DISE. We performed a single institution, longitudinal prospective evaluation of a consecutive group of mild moderate patients with obstructive sleep apnoea syndrome who underwent DISE. During sleep endoscopy, gentle manoeuvre of mandibular advancement less than 5 mm was performed. In 30 of 65 patients (46.2%) we obtained an unsuccessful improvement of airway patency whereas in 35 of 65 patients (53.8%) the improvement was successful and patients were considered suitable for oral device application. Because 7 of 35 patients were excluded due to conditions interfering with oral appliance therapy, we finally treated 28 patients. After 3 months of treatment, we observed a significant improvement in the Epworth medium index [(7.35 ± 2.8 versus 4.1 ± 2.2 (p < 0.05)], in mean AHI [(21.4 ± 6 events per hour versus 8.85 ± 6.9 (p < 0.05)] and in mean ODI [(18.6 ± 8 events per hour to 7 ± 5.8 (p < 0.05)]. We observed that the apnoea/hypopnoea index (AHI) improved by up to 50% from baseline in 71.4% of patients selected after DISE for MAD therapy. In the current study, mandibular advancement splint therapy was successfully prescribed on the basis not only of severity of disease, as

  16. A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

    NASA Astrophysics Data System (ADS)

    Kranthi Kumar, V.; Dhar, Sukanya; Choudhury, Tanushree H.; Shivashankar, S. A.; Raghavan, Srinivasan

    2015-04-01

    Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm2 V-1 s-1 and 44 cm2 V-1 s-1 respectively. These are among the best reported yet for CVD MoS2.Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm2 V-1 s-1 and 44 cm2 V-1 s-1 respectively. These are among the best reported yet for CVD MoS2. Electronic supplementary information (ESI) available: Methodology for thermodynamic modeling, supersaturation

  17. Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

    NASA Astrophysics Data System (ADS)

    Chakraborty, Chaitali; Bose, Chayanika

    2016-02-01

    The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal-oxide-semiconductor (MOS) structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si-substrate interface than to SiO2/Al-gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance-voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

  18. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma.

    PubMed

    Islam, Muhammad R; Kang, Narae; Bhanu, Udai; Paudel, Hari P; Erementchouk, Mikhail; Tetard, Laurene; Leuenberger, Michael N; Khondaker, Saiful I

    2014-09-07

    We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS2 and other transition metal dichalcogenides.

  19. Ultrafast Charge Transfer and Enhanced Absorption in MoS2-Organic van der Waals Heterojunctions Using Plasmonic Metasurfaces.

    PubMed

    Petoukhoff, Christopher E; Krishna, M Bala Murali; Voiry, Damien; Bozkurt, Ibrahim; Deckoff-Jones, Skylar; Chhowalla, Manish; O'Carroll, Deirdre M; Dani, Keshav M

    2016-11-22

    Hybrid organic-inorganic heterostructures are attracting tremendous attention for optoelectronic applications due to their low-cost processing and high performance in devices. In particular, van der Waals p-n heterojunctions formed between inorganic two-dimensional (2D) materials and organic semiconductors are of interest due to the quantum confinement effects of 2D materials and the synthetic control of the physical properties of organic semiconductors, enabling a high degree of tunable optoelectronic properties for the heterostructure. However, for photovoltaic applications, hybrid 2D-organic heterojunctions have demonstrated low power conversion efficiencies due to the limited absorption from constraints on the physical thickness of each layer. Here, we investigate the ultrafast charge transfer dynamics between an organic polymer:fullerene blend and 2D n-type MoS2 using transient pump-probe reflectometry. We employ plasmonic metasurfaces to enhance the absorption and charge photogeneration within the physically thin hybrid MoS2-organic heterojunction. For the hybrid MoS2-organic heterojunction in the presence of the plasmonic metasurface, the charge generation within the polymer is enhanced 6-fold, and the total active layer absorption bandwidth is increased by 90 nm relative to the polymer:fullerene blend alone. We demonstrate that MoS2-organic heterojunctions can serve as hybrid solar cells, and their efficiencies can be improved using plasmonic metasurfaces.

  20. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.

    PubMed

    Kim, In Soo; Sangwan, Vinod K; Jariwala, Deep; Wood, Joshua D; Park, Spencer; Chen, Kan-Sheng; Shi, Fengyuan; Ruiz-Zepeda, Francisco; Ponce, Arturo; Jose-Yacaman, Miguel; Dravid, Vinayak P; Marks, Tobin J; Hersam, Mark C; Lauhon, Lincoln J

    2014-10-28

    Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2 have been intensively investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS2 during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoOx species. As MoS2-δ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ∼ 0 V. We conclude that the electrical and optical properties of monolayer MoS2 crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.