Science.gov

Sample records for advanced semiconductor device

  1. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  2. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  3. Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

    DOE PAGES

    Carey, Graham F.; Pardhanani, A. L.; Bova, S. W.

    2000-01-01

    In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of themore » methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.« less

  4. Advanced numerical methods and software approaches for semiconductor device simulation

    SciTech Connect

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  5. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  6. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  7. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  8. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  9. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  10. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  11. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  12. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lee, Honggoo; Lee, Jongsu; Kim, Sang Min; Lee, Changhwan; Han, Sangjun; Kim, Myoungsoo; Kwon, Wontaik; Park, Sung-Ki; Vukkadala, Pradeep; Awasthi, Amartya; Kim, J. H.; Veeraraghavan, Sathish; Choi, DongSub; Huang, Kevin; Dighe, Prasanna; Lee, Cheouljung; Byeon, Jungho; Dey, Soham; Sinha, Jaydeep

    2015-03-01

    Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes - which is directly related to

  13. Simulating nanoscale semiconductor devices.

    SciTech Connect

    Salinger, Andrew Gerhard; Zhao, P.; Woolard, D. L.; Kelley, C. Tim; Lasater, Matthew S.

    2005-03-01

    The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

  14. Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

    SciTech Connect

    Sukharev, V.; Kteyan, A.; Choy, J.-H.; Hovsepyan, H.; Markosian, A.; Zschech, E.; Huebner, R.

    2011-11-10

    Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D through-silicon-via (TSV) based technologies are outlined. The paper addresses the growing need in a simulation-based design verification flow capable to analyze a design of 3D IC stacks and to determine across-die out-of-spec variations in device electrical characteristics caused by the layout and through-silicon-via (TSV)/package-induced mechanical stress. The limited characterization/measurement capabilities for 3D IC stacks and a strict ''good die'' requirement make this type of analysis critical for the achievement of an acceptable level of functional and parametric yield and reliability. The paper focuses on the development of a design-for-manufacturability (DFM) type of methodology for managing mechanical stresses during a sequence of designs of 3D TSV-based dies, stacks and packages. A set of physics-based compact models for a multi-scale simulation to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D TSV technology is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics of the test-chip devices is presented. A strategy for generation of a simulation feeding data and respective materials characterization approach are proposed, with the goal to generate a database for multi-scale material parameters of wafer-level and package-level structures. For model validation, high-resolution strain measurements in Si channels of the test-chip devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm strain measurements so far.

  15. High-speed semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sze, S. M.

    An introduction to the physical principles and operational characteristics of high-speed semiconductor devices is presented. Consideration is given to materials and technologies for high-speed devices, device building blocks, the submicron MOSFET, homogeneous field-effect transistors, and heterostructure field-effect transistors. Also considered are quantum-effect devices, microwave diodes, and high-speed photonic devices.

  16. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  17. Nanoscale Semiconductor Devices as New Biomaterials

    PubMed Central

    Zimmerman, John; Parameswaran, Ramya; Tian, Bozhi

    2016-01-01

    Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices that can be integrated into synthetic tissues and targeted intra- or extracellularly to study single cells. Lastly, we discuss future directions and challenges in further developing this area of research, which will advance biology and medicine. PMID:27213041

  18. Radiation Effects on Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Liu, Guangyu

    In order to observe and analyze the behavior of semiconductor devices under radiation exposure, a real time measurement system has been built so that investigations can be carried out before, during, and after radiation exposure. The system consists of an IBM personal computer with IEEE488 I/O interface board and various Hewlett-Packard instruments. Real time measurement and device parameter characterization programs have been written to accommodate the study. Such a system provides the ability to do not only direct and dynamic measurements, but also comprehensive parameter analyses for semiconductor devices. It is well known that MOS devices are vulnerable to radiation produced ionization. Many MOS device parameters are radiation sensitive. Based on real time measurement results and the mathematical model of a CMOS inverter, a radiation hardening design method has been developed. With the example of noise margin optimization, the concept of desensitizing device parameters is expected to minimize radiation damage to MOS integrated circuits.

  19. International Semiconductor Device Research Symposium (ISDRS-91)

    NASA Astrophysics Data System (ADS)

    Shur, Michael; Money, John M.

    1992-03-01

    The First International Semiconductor Device Research Symposium took place in Charlottesville, VA, on 4-6 Dec. 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the US, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the Aug. 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and optoelectronic technologies, and silicon carbide and diamond devices.

  20. International Semiconductor Device Research Symposium (ISDRS-91)

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    1992-03-01

    The First International Semiconductor Device Research Symposium (ISDRS-91) took place in Charlottesville, Va on December 4-6, 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the United States, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the August 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on novel ideas such as advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and opto-electronics technologies, and silicon carbide and diamond devices.

  1. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  2. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  3. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  4. Architectures for Improved Organic Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  5. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  6. Heating device for semiconductor wafers

    DOEpatents

    Vosen, S.R.

    1999-07-27

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  7. Heating device for semiconductor wafers

    DOEpatents

    Vosen, Steven R.

    1999-01-01

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  8. Advanced 3-V semiconductor technology assessment

    NASA Technical Reports Server (NTRS)

    Nowogrodzki, M.

    1983-01-01

    Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

  9. Radiation-Hardness Data For Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  10. Library Analog Semiconductor Devices SPICE Simulators

    SciTech Connect

    Deveney, Michael F.; Archer, Wendel; Bogdan, Carolyn W.

    1996-07-23

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  11. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  12. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  13. SEMICONDUCTOR DEVICES: Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    NASA Astrophysics Data System (ADS)

    Lixin, Zhao; Zhi, Jin; Xinyu, Liu

    2009-12-01

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.

  14. Whatever happened to silicon carbide. [semiconductor devices

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1981-01-01

    The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

  15. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  16. International Semiconductor Device Research Symposium (ISDRS-93)

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  17. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  18. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  19. General Electronics Technician: Semiconductor Devices and Circuits.

    ERIC Educational Resources Information Center

    Hilley, Robert

    These instructional materials include a teacher's guide designed to assist instructors in organizing and presenting an introductory course in general electronics focusing on semiconductor devices and circuits and a student guide. The materials are based on the curriculum-alignment concept of first stating the objectives, developing instructional…

  20. Semiconductors: In Situ Processing of Photovoltaic Devices

    NASA Technical Reports Server (NTRS)

    Curreri, Peter A.

    1998-01-01

    The possible processing of semiconductor photovoltaic devices is discussed. The requirements for lunar PV cells is reviewed, and the key challenges involved in their manufacturing are investigated. A schematic diagram of a passivated emitter and rear cell (PERC) is presented. The possible fabrication of large photovoltaic arrays in space from lunar materials is also discussed.

  1. Power semiconductor device with negative thermal feedback

    NASA Technical Reports Server (NTRS)

    Borky, J. M.; Thornton, R. D.

    1970-01-01

    Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.

  2. Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

    SciTech Connect

    Cooper, David; Denneulin, Thibaud; Barnes, Jean-Paul; Hartmann, Jean-Michel; Hutin, Louis; Le Royer, Cyrille; Beche, Armand; Rouviere, Jean-Luc

    2012-12-15

    Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.

  3. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  4. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  5. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  6. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  7. Refrigeration penalties for crycooling power semiconductor devices

    SciTech Connect

    Ramalingam, M.L.; Donovan, B.D.; Mahefkey, T.

    1995-12-31

    There has been recent interest in the potential applications of cryogenically cooled power electronics, capacitors, and inductors. There are potentially many military and commercial uses for these devices. Preliminary feasibility studies, based on refrigeration thermodynamics, have been conducted for candidate power semiconductor and power conditioning components. While superconducting devices operate at 77K or lower, the present analysis indicates that significant benefits cannot be derived by cooling the various power conditioning components to such low temperatures. It was found that, by operating the power semiconductor component at 150K instead of at 77K, the overall system efficiency was not jeopardized by way of large input power requirements to dissipate small refrigerator loads. This is an acute problem as current cryogenic refrigeration systems allow for very low levels of energy dissipation while performing at about 7 to 10% of the Carnot coefficients of performance (COP) between 300K and 77K.

  8. Semiconductor quantum wells: old technology or new device functionalities

    NASA Astrophysics Data System (ADS)

    Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.

    2009-08-01

    The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.

  9. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

    NASA Astrophysics Data System (ADS)

    De Jesus, Joel

    The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

  11. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    NASA Astrophysics Data System (ADS)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  12. Semiconductor Device Analysis on Personal Computers

    1993-02-08

    PC-1D models the internal operation of bipolar semiconductor devices by solving for the concentrations and quasi-one-dimensional flow of electrons and holes resulting from either electrical or optical excitation. PC-1D uses the same detailed physical models incorporated in mainframe computer programs, yet runs efficiently on personal computers. PC-1D was originally developed with DOE funding to analyze solar cells. That continues to be its primary mode of usage, with registered copies in regular use at more thanmore » 100 locations worldwide. The program has been successfully applied to the analysis of silicon, gallium-arsenide, and indium-phosphide solar cells. The program is also suitable for modeling bipolar transistors and diodes, including heterojunction devices. Its easy-to-use graphical interface makes it useful as a teaching tool as well.« less

  13. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  14. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  15. Method for fabricating an interconnected array of semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1989-10-10

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  16. Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen; Niebuhr, Jason; Cruz, Santana; Lamoreaux, chris

    2007-01-01

    The advanced resistive exercise device (ARED), now at the prototype stage of development, is a versatile machine that can be used to perform different customized exercises for which, heretofore, it has been necessary to use different machines. Conceived as a means of helping astronauts and others to maintain muscle and bone strength and endurance in low-gravity environments, the ARED could also prove advantageous in terrestrial settings (e.g., health clubs and military training facilities) in which many users are exercising simultaneously and there is heavy demand for use of exercise machines.

  17. Coated semiconductor devices for neutron detection

    DOEpatents

    Klann, Raymond T.; McGregor, Douglas S.

    2002-01-01

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  18. Skutterudite Compounds For Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander; Vandersande, Jan

    1996-01-01

    New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

  19. Semiconductor device modeling on a workstation

    SciTech Connect

    Diegert, C.

    1985-09-01

    We choose to move from large mainframe computers to workstations to gain the interactive graphics we need to prepare and to analyze semiconductor device modeling problems. Given this much on a workstation, it is convenient to attempt to solve the entire problem there. We find that a top-of-the-line Apollo 660 workstation, with bit-slice processor, pipelined arithmetic processor, and 4 megabytes of real memory, is surprisingly effective in finding solutions when running the Pisces II device modeling code. In our experiment we find where the workstation bogs down when running these problems. We both analyze the Pisces CPU time log and we sample the executing program to accumulate a histogram of execution time as distributed over the source code. Results suggest how Pisces could be adapted to solve somewhat larger problems entirely on the workstation. Evolution of a trusted derivative of Pisces, to be used on supercomputers without interactivity, is suggested to complement our success with Pisces on workstations. 4 refs.

  20. Iterative solution of the semiconductor device equations

    SciTech Connect

    Bova, S.W.; Carey, G.F.

    1996-12-31

    Most semiconductor device models can be described by a nonlinear Poisson equation for the electrostatic potential coupled to a system of convection-reaction-diffusion equations for the transport of charge and energy. These equations are typically solved in a decoupled fashion and e.g. Newton`s method is used to obtain the resulting sequences of linear systems. The Poisson problem leads to a symmetric, positive definite system which we solve iteratively using conjugate gradient. The transport equations lead to nonsymmetric, indefinite systems, thereby complicating the selection of an appropriate iterative method. Moreover, their solutions exhibit steep layers and are subject to numerical oscillations and instabilities if standard Galerkin-type discretization strategies are used. In the present study, we use an upwind finite element technique for the transport equations. We also evaluate the performance of different iterative methods for the transport equations and investigate various preconditioners for a few generalized gradient methods. Numerical examples are given for a representative two-dimensional depletion MOSFET.

  1. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  2. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  3. Photovoltaic healing of non-uniformities in semiconductor devices

    DOEpatents

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  4. Contributive research in compound semiconductor material and related devices

    NASA Astrophysics Data System (ADS)

    Twist, James R.

    1988-05-01

    The objective of this program was to provide the Electronic Device Branch (AFWAL/AADR) with the support needed to perform state of the art electronic device research. In the process of managing and performing on the project, UES has provided a wide variety of scientific and engineering talent who worked in-house for the Avionics Laboratory. These personnel worked on many different types of research programs from gas phase microwave driven lasers, CVD and MOCVD of electronic materials to Electronic Device Technology for new devices. The fields of research included MBE and theoretical research in this novel growth technique. Much of the work was slanted towards the rapidly developing technology of GaAs and the general thrust of the research that these tasks started has remained constant. This work was started because the Avionics Laboratory saw a chance to advance the knowledge and level of the current device technology by working in the compounds semiconductor field. UES is pleased to have had the opportunity to perform on this program and is looking forward to future efforts with the Avionics Laboratory.

  5. A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport

    SciTech Connect

    Noaman, B. A.; Korman, C. E.

    2009-04-23

    In this paper, we present a deterministic approach to calculate terminal current noise characteristics in semiconductor devices in the framework of semiclassical transport based on the spherical harmonics of the Boltzmann Transport Equation. The model relies on the solution of the Boltzmann equation in the frequency domain with special initial and boundary conditions. The terminal current fluctuation is directly related to scattering without the additional Langevin noise term added to the calculation. Simulation results are presented for the terminal current spectral density for a 1-D n{sup +}nn{sup +} structure due to elastic-acoustic and intervally scattering.

  6. Quantum transport in nanoscale semiconductor devices

    NASA Astrophysics Data System (ADS)

    Jones, Gregory Millington

    Because of technological advancement, transistor dimensions are approaching the length scale of the electron Fermi wavelength, on the order of only nanometers. In this regime, quantum mechanical phenomena will dominate electron transport. Using InAs single quantum wells, we have fabricated Y-shaped electron waveguides whose lengths are smaller than the elastic mean free path. Electron transport in these waveguides is ballistic, a quantum mechanical phenomenon. Coupled to the electron waveguide are two gates used to coherently steer the electron wave. We demonstrate for the first time that gating modifies the electron's wave function, by changing its geometrical resonance in the waveguide. Evidence of this alteration is the observation of anti-correlated, oscillatory transconductances. Our data provides direct evidence of wavefunction steering in a transistor structure and has applications in high-speed, low-power electronics. Quantum computing, if realized, will have a significant impact in computer security. The development of quantum computers has been hindered by challenges in producing the basic building block, the qubit. Qubit approaches using semiconductors promise upscalability and can take the form of a single electron transistor. We have designed, fabricated, and characterized single electron transistors in InAs, and separately in silicon, for the application of quantum computing. With the InAs single electron transistor, we have demonstrated one-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. Electrical transport data indicates a 15meV charging energy and a 20meV orbital energy spacing, which implies a quantum dot of 20nm in diameter. InAs is attractive due to its large electron Lande g-factor. With the silicon-based single electron transistor, we have demonstrated a structure that is similar to conventional silicon-based metal-oxide-semiconductor field effect transistors. The substrate is undoped and

  7. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  8. SPICE-SANDIA.LIB. Library Analog Semiconductor Devices SPICE Simulators

    SciTech Connect

    Deveney, M.F.; Archer, W.; Bogdan, C.

    1996-06-06

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  9. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  10. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  11. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  12. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

    SciTech Connect

    Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

    2015-05-12

    A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

  13. Simulation of neutron radiation damage in silicon semiconductor devices.

    SciTech Connect

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  14. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  15. Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal-Oxide-Semiconductor Technology

    NASA Astrophysics Data System (ADS)

    Han, Jin-Ping; Shimizu, Takashi; Pan, Li-Hong; Voelker, Moritz; Bernicot, Christophe; Arnaud, Franck; Mocuta, Anda; Stahrenberg, Knut; Azuma, Atsushi; Eller, Manfred; Yang, Guoyong; Jaeger, Daniel; Zhuang, Haoren; Miyashita, Katsura; Stein, Kenneth; Nair, Deleep; Hoo Park, Jae; Kohler, Sabrina; Hamaguchi, Masafumi; Li, Weipeng; Kim, Kisang; Chanemougame, Daniel; Kim, Nam Sung; Uchimura, Sadaharu; Tsutsui, Gen; Wiedholz, Christian; Miyake, Shinich; van Meer, Hans; Liang, Jewel; Ostermayr, Martin; Lian, Jenny; Celik, Muhsin; Donaton, Ricardo; Barla, Kathy; Na, MyungHee; Goto, Yoshiro; Sherony, Melanie; Johnson, Frank S.; Wachnik, Richard; Sudijono, John; Kaste, Ed; Sampson, Ron; Ku, Ja-Hum; Steegen, An; Neumueller, Walter

    2011-04-01

    High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “freely” with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance Gm, conductance Gds, Gm/Id, mismatching (MM) behavior, flicker noise (1/f noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., Ion-Ioff, Ioff-Vtsat, DIBL, Cjswg) and reliability (HCI) have also shown the comparability of HPA devices over control.

  16. Method for fabricating an interconnected array of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Grimmer, Derrick P. (Inventor)

    1995-01-01

    A method of forming an array of interconnected solar cells. A flexible substrate carrying semiconductor and conductive layers is divided into individual devices by slitting the substrate along the web length. The individual devices are then connected with one another in series by laminating the substrate onto an insulating backing and by depositing conducting interconnection layers which join the lower conductor of one device with the top conductor of the adjoining device.

  17. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  18. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  19. A Thermal and Electrical Analysis of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Vafai, Kambiz

    1997-01-01

    The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

  20. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  1. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  2. Nanostructured Semiconductor Device Design in Solar Cells

    NASA Astrophysics Data System (ADS)

    Dang, Hongmei

    We demonstrate the use of embedded CdS nanowires in improving spectral transmission loss and the low mechanical and electrical robustness of planar CdS window layer and thus enhancing the quantum efficiency and the reliability of the CdS-CdTe solar cells. CdS nanowire window layer enables light transmission gain at 300nm-550nm. A nearly ideal spectral response of quantum efficiency at a wide spectrum range provides an evidence for improving light transmission in the window layer and enhancing absorption and carrier generation in absorber. Nanowire CdS/CdTe solar cells with Cu/graphite/silver paste as back contacts, on SnO2/ITO-soda lime glass substrates, yield the highest efficiency of 12% in nanostructured CdS-CdTe solar cells. Reliability is improved by approximately 3 times over the cells with the traditional planar CdS counterpart. Junction transport mechanisms are delineated for advancing the basic understanding of device physics at the interface. Our results prove the efficacy of this nanowire approach for enhancing the quantum efficiency and the reliability in windowabsorber type solar cells (CdS-CdTe, CdS-CIGS and CdS-CZTSSe etc) and other optoelectronic devices. We further introduce MoO3-x as a transparent, low barrier back contact. We design nanowire CdS-CdTe solar cells on flexible foils of metals in a superstrate device structure, which makes low-cost roll-to-roll manufacturing process feasible and greatly reduces the complexity of fabrication. The MoO3 layer reduces the valence band offset relative to the CdTe, and creates improved cell performance. Annealing as-deposited MoO3 in N 2 reduces series resistance from 9.98 O/cm2 to 7.72 O/cm2, and hence efficiency of the nanowire solar cell is improved from 9.9% to 11%, which efficiency comparable to efficiency of planar counterparts. When the nanowire solar cell is illuminated from MoO 3-x /Au side, it yields an efficiency of 8.7%. This reduction in efficiency is attributed to decrease in Jsc from 25.5m

  3. Method of producing strained-layer semiconductor devices via subsurface-patterning

    DOEpatents

    Dodson, Brian W.

    1993-01-01

    A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

  4. Methods of Measurement for Semiconductor Materials, Process Control, and Devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1973-01-01

    The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

  5. Silicon superlattices: Theory and application to semiconductor devices

    NASA Technical Reports Server (NTRS)

    Moriarty, J. A.

    1981-01-01

    Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

  6. Excitons and the lifetime of organic semiconductor devices

    PubMed Central

    Forrest, Stephen R.

    2015-01-01

    While excitons are responsible for the many beneficial optical properties of organic semiconductors, their non-radiative recombination within the material can result in material degradation due to the dumping of energy onto localized molecular bonds. This presents a challenge in developing strategies to exploit the benefits of excitons without negatively impacting the device operational stability. Here, we will briefly review the fundamental mechanisms leading to excitonic energy-driven device ageing in two example devices: blue emitting electrophosphorescent organic light emitting devices (PHOLEDs) and organic photovoltaic (OPV) cells. We describe strategies used to minimize or even eliminate this fundamental device degradation pathway. PMID:25987572

  7. Deep impurity trapping concepts for power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1982-01-01

    High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

  8. Methods of forming semiconductor devices and devices formed using such methods

    DOEpatents

    Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

    2013-05-21

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  9. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

  10. Optoelectronic semiconductor device and method of fabrication

    DOEpatents

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  11. A thermovoltaic semiconductor device including a plasma filter

    SciTech Connect

    Baldasaro, Paul F.

    1997-12-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential are disclosed. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  12. Second International Semiconductor Device Research Symposium (ISDRS-1993)

    NASA Astrophysics Data System (ADS)

    Shur, Michael; Money, John M.

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  13. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  14. Improvement of screening methods for silicon planar semiconductor devices

    NASA Technical Reports Server (NTRS)

    Berger, W. M.

    1972-01-01

    The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.

  15. Combining semiconductor quantum dots and bioscaffolds into nanoscale energy transfer devices.

    PubMed

    Spillmann, Christopher M; Stewart, Michael H; Susumu, Kimihiro; Medintz, Igor L

    2015-11-01

    Significant advances have been made in the development of nanoscale devices capable of exciton transport via Förster resonance energy transfer. Several requirements must be met for effective operation, including a reliable energy-harvesting source along with highly organized, precisely placed energy relay elements. For the latter, biological scaffolds such as DNA provide a customizable, symmetric, and stable structure that can be site-specifically modified with organic fluorophores. Here, advancements in nanoscale energy transfer devices incorporating semiconductor nanocrystals and bioscaffolds are reviewed with discussion of biofunctionalization, linker chemistries, design considerations, and concluding with applications in light harvesting, multiplexed biosensing, and optical logic. PMID:26560627

  16. Metallization and packaging of compound semiconductor devices at Sandia National Laboratories

    SciTech Connect

    Seigal, P.K.; Armendariz, M.G.; Rieger, D.J.; Lear, K.L.; Sullivan, C.T.

    1996-11-01

    Recent advances in compound semiconductor technology utilize a variety of metal thin films fabricated by thermal and electron-beam evaporation, and electroplating. An overview of metal processes used by Sandia`s Compound Semiconductor Research Laboratory is presented. Descriptions of electrical n-type and p-type ohmic contact alloys, interconnect metal, and metal layers specifically included for packaging requirements are addressed. Several illustrations of devices incorporating gold plated air bridges are included. ``Back-end`` processes such as flip-chip under bump metallurgy with fluxless solder reflow and plated solder processes are mentioned as current research areas.

  17. Release strategies for making transferable semiconductor structures, devices and device components

    SciTech Connect

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  18. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2011-04-26

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  19. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  20. Electromagnetic radiation screening of semiconductor devices for long life applications

    NASA Technical Reports Server (NTRS)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  1. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  2. Screenable contact structure and method for semiconductor devices

    DOEpatents

    Ross, Bernd

    1980-08-26

    An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.

  3. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  4. Development of a multi-physics simulation framework for semiconductor materials and devices

    NASA Astrophysics Data System (ADS)

    Almeida, Nuno Sucena

    Modern day semiconductor technology devices face the ever increasing issue of accounting for quantum mechanics effects on their modeling and performance assessment. The objective of this work is to create a user-friendly, extensible and powerful multi-physics simulation blackbox for nano-scale semiconductor devices. By using a graphical device modeller this work will provide a friendly environment were a user without deep knowledge of device physics can create a device, simulate it and extract optical and electrical characteristics deemed of interest to his engineering occupation. Resorting to advanced template C++ object-oriented design from the start, this work was able to implement algorithms to simulate 1,2 and 3D devices which along with scripting using the well known Python language enables the user to create batch simulations, to better optimize device performance. Higher-dimensional semiconductors, like wires and dots, require a huge computational cost. MPI parallel libraries enable the software to tackle complex geometries which otherwise would be unfeasible on a small single-CPU computer. Quantum mechanical phenomena is described by Schrodinger's equation which must be solved self-consistently with Poisson's equation for the electrostatic charge and, if required, make use of piezoelectric charge terms from elasticity constraints. Since the software implements a generic n-dimensional FEM engine, virtually any kind of Partial Differential Equation can be solved and in the future, other required solvers besides the ones already implemented will also be included for easy of use. In particular for the semiconductor device physics, we solve the quantum mechanics effective mass conduction-valence band k·p approximation to the Schrodinger-Poisson, in any crystal growth orientation (C,polar M,A and semi-polar planes or any user defined angle) and also include Piezoelectric effects caused by strain in lattice mismatched layers, where the implemented software

  5. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1972-01-01

    Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

  6. Zinc Alloys for the Fabrication of Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  7. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  8. Method of making high breakdown voltage semiconductor device

    DOEpatents

    Arthur, Stephen D.; Temple, Victor A. K.

    1990-01-01

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  9. 78 FR 3319 - Amendments to Existing Validated End User Authorizations: Advanced Micro Devices China, Inc., Lam...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-16

    ... Micro 3D002, 3D003, AMD Technologies 75 FR 25763, 5/10/ Devices China, 3E001 (limited to (China) Co., 10... Suzhou, China 78 FR [INSERT FR 3C002 and 3C004 215021. PAGE NUMBER] 1/16/ and Advanced Micro 13... Authorizations: Advanced Micro Devices China, Inc., Lam Research Corporation, SK hynix Semiconductor (China)...

  10. Advanced Semiconductor Dosimetry in Radiation Therapy

    SciTech Connect

    Rosenfeld, Anatoly B.

    2011-05-05

    Modern radiation therapy is very conformal, resulting in a complexity of delivery that leads to many small radiation fields with steep dose gradients, increasing error probability. Quality assurance in delivery of such radiation fields is paramount and requires real time and high spatial resolution dosimetry. Semiconductor radiation detectors due to their small size, ability to operate in passive and active modes and easy real time multichannel readout satisfy many aspects of in vivo and in a phantom quality assurance in modern radiation therapy. Update on the recent developments and improvements in semiconductor radiation detectors and their application for quality assurance in radiation therapy, based mostly on the developments at the Centre for Medical Radiation Physics (CMRP), University of Wollongong, is presented.

  11. Molecular detection via hybrid peptide-semiconductor photonic devices

    NASA Astrophysics Data System (ADS)

    Estephan, E.; Saab, M.-b.; Martin, M.; Cloitre, T.; Larroque, C.; Cuisinier, F. J. G.; Malvezzi, A. M.; Gergely, C.

    2011-03-01

    The aim of this work was to investigate the possibilities to support device functionality that includes strongly confined and localized light emission and detection processes within nano/micro-structured semiconductors for biosensing applications. The interface between biological molecules and semiconductor surfaces, yet still under-explored is a key issue for improving biomolecular recognition in devices. We report on the use of adhesion peptides, elaborated via combinatorial phage-display libraries for controlled placement of biomolecules, leading to user-tailored hybrid photonic systems for molecular detection. An M13 bacteriophage library has been used to screen 1010 different peptides against various semiconductors to finally isolate specific peptides presenting a high binding capacity for the target surfaces. When used to functionalize porous silicon microcavities (PSiM) and GaAs/AlGaAs photonic crystals, we observe the formation of extremely thin (<1nm) peptide layers, hereby preserving the nanostructuration of the crystals. This is important to assure the photonic response of these tiny structures when they are functionalized by a biotinylated peptide layer and then used to capture streptavidin. Molecular detection was monitored via both linear and nonlinear optical measurements. Our linear reflectance spectra demonstrate an enhanced detection resolution via PSiM devices, when functionalized with the Si-specific peptide. Molecular capture at even lower concentrations (femtomols) is possible via the second harmonic generation of GaAs/AlGaAs photonic crystals when functionalized with GaAs-specific peptides. Our work demonstrates the outstanding value of adhesion peptides as interface linkers between semiconductors and biological molecules. They assure an enhanced molecular detection via both linear and nonlinear answers of photonic crystals.

  12. An integrated semiconductor device enabling non-optical genome sequencing.

    PubMed

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-21

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome. PMID:21776081

  13. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  14. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  15. Recent advances in optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chilla, Juan; Shu, Qi-Ze; Zhou, Hailong; Weiss, Eli; Reed, Murray; Spinelli, Luis

    2007-02-01

    Optically pumped semiconductor lasers offer significant advantages with respect to all traditional diode-pumped solid state lasers (including fiber lasers) in regards to wavelength flexibility, broad pump tolerance, efficient spectral and spatial brightness conversion and high power scaling. In this talk we will describe our recent progress in the lab and applying this technology to commercial systems. Results include diversified wavelengths from 460 to 570nm, power scaling to >60W of CW 532nm, and the launch of a low cost 5W CW visible source for forensic applications.

  16. Semiconductor ferroelectric compositions and their use in photovoltaic devices

    DOEpatents

    Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E; Grinberg, Ilya; West, Don Vincent

    2016-11-01

    Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

  17. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  18. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    DOEpatents

    Sopori, Bhushan

    2014-05-27

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  19. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1972-01-01

    Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

  20. A quantum energy transport model for semiconductor device simulation

    SciTech Connect

    Sho, Shohiro; Odanaka, Shinji

    2013-02-15

    This paper describes numerical methods for a quantum energy transport (QET) model in semiconductors, which is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. We newly drive a four-moments QET model similar with a classical ET model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing numerical schemes and an iterative solution method with a relaxation method. Numerical simulations of electron transport in a scaled MOSFET device are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.

  1. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1971-01-01

    The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.

  2. Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

    NASA Astrophysics Data System (ADS)

    Ward, R. R.; Dawson, W. J.; Zhu, L.; Kirschman, R. K.; Niu, G.; Nelms, R. M.; Mueller, O.; Hennessy, M. J.; Mueller, E. K.

    2006-03-01

    It is predicted that systems for electrical power generation, conversion and distribution on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. In view of this, we have taken initial steps in the investigation and development of SiGe semiconductor devices for cryogenic power applications. We have (1) simulated, designed, fabricated and characterized SiGe power diodes, and (2) evaluated these SiGe diodes in cryogenic power converters. Our target low-end temperature is 55 K, although we characterize devices and circuits down to approximately 30 K. We have demonstrated, experimentally, favorable characteristics for SiGe power diodes and have shown higher conversion efficiency compared to equivalent Si power diodes in a 100-W boost switching DC-DC power converter, over an ambient temperature range of 300 K down to approximately 30 K.

  3. Development of silicon carbide semiconductor devices for high temperature applications

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

    1991-01-01

    The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

  4. Comparison of Non-Parabolic Hydrodynamic Simulations for Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Smith, A. W.; Brennan, K. F.

    1996-01-01

    Parabolic drift-diffusion simulators are common engineering level design tools for semiconductor devices. Hydrodynamic simulators, based on the parabolic band approximation, are becoming more prevalent as device dimensions shrink and energy transport effects begin to dominate device characteristic. However, band structure effects present in state-of-the-art devices necessitate relaxing the parabolic band approximation. This paper presents simulations of ballistic diodes, a benchmark device, of Si and GaAs using two different non-parabolic hydrodynamic formulations. The first formulation uses the Kane dispersion relationship in the derivation of the conservation equations. The second model uses a power law dispersion relation {(hk)(exp 2)/2m = xW(exp Y)}. Current-voltage relations show that for the ballistic diodes considered. the non-parabolic formulations predict less current than the parabolic case. Explanations of this will be provided by examination of velocity and energy profiles. At low bias, the simulations based on the Kane formulation predict greater current flow than the power law formulation. As the bias is increased this trend changes and the power law predicts greater current than the Kane formulation. It will be shown that the non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation are limited due to the binomial approximation which was utilized in the derivation.

  5. Study of total dose effect on semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kanno, Toru

    1993-10-01

    This memorandum describes single event phenomena of power MOS (Metal Oxide Semiconductor) - FET (Field Effect Transistor) and SRAM (Static Random Access Memory), and total dose resistance of 256 k bit EEPROM (Electrically Erasable and Programmable Read Only Memory). The single event is a phenomenon that causes permanent failure and malfunction by a single high energy heavy atom entering into a semiconductor device. This study evaluated power MOS-FET and SRAM for Single Event Burnout (SEB) and Single Event Latchup (SEL) using newly developed Energetic Particle Induced Charge Spectroscopy (EPICS). As a result, influence of LET (Linear Energy Transfer) on avalanche effect and phenomena relating with nuclear reaction/recoil were observed, and mechanism of SEB was suggested. In addition, SEL occurrence probability was determined in wide range of LET using an accelerator of heavy ions. This study evaluated total dose effect of EEPROM, and malfunction site and the total dose mechanism were proposed. However, the total dose resistance was not sufficient to be used in outer space. Because it will require enormous change of processes to improve this device, and because degeneration of peripheral circuits were too fast to be evaluated, development of space ROM (Read Only Memory) seems to be difficult in this stage.

  6. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique.

    PubMed

    Chen, J; Yuan, X; Sekiguchi, T

    2008-01-01

    We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique. By varying the parameters such as temperature, accelerating voltage (V(acc)), bias voltage, and stressing time, it is possible to extend EBIC application from conventional defect characterization to advanced device diagnosis. As an electron beam can excite a certain volume even beneath the surface passive layer, EBIC can be effectively employed to diagnose complicated devices with hybrid structure. Three topics were selected to demonstrate EBIC applications. First, the recombination activities of grain boundaries and their interaction with Fe impurity in photovoltaic multicrystalline Si (mc-Si) are clarified by temperature-dependent EBIC. Second, the detection of dislocations between strained-Si and SiGe virtual substrate are shown to overcome the limitation of depletion region. Third, the observation of leakage sites in high-k gate dielectric is demonstrated for the characterization of advanced hybrid device structures.

  7. SEMICONDUCTOR DEVICES: Simulation for signal charge transfer of charge coupled devices

    NASA Astrophysics Data System (ADS)

    Zujun, Wang; Yinong, Liu; Wei, Chen; Benqi, Tang; Zhigang, Xiao; Shaoyan, Huang; Minbo, Liu; Yong, Zhang

    2009-12-01

    Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.

  8. Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting.

    PubMed

    Hisatomi, Takashi; Kubota, Jun; Domen, Kazunari

    2014-11-21

    Photocatalytic and photoelectrochemical water splitting under irradiation by sunlight has received much attention for production of renewable hydrogen from water on a large scale. Many challenges still remain in improving energy conversion efficiency, such as utilizing longer-wavelength photons for hydrogen production, enhancing the reaction efficiency at any given wavelength, and increasing the lifetime of the semiconductor materials. This introductory review covers the fundamental aspects of photocatalytic and photoelectrochemical water splitting. Controlling the semiconducting properties of photocatalysts and photoelectrode materials is the primary concern in developing materials for solar water splitting, because they determine how much photoexcitation occurs in a semiconductor under solar illumination and how many photoexcited carriers reach the surface where water splitting takes place. Given a specific semiconductor material, surface modifications are important not only to activate the semiconductor for water splitting but also to facilitate charge separation and to upgrade the stability of the material under photoexcitation. In addition, reducing resistance loss and forming p-n junction have a significant impact on the efficiency of photoelectrochemical water splitting. Correct evaluation of the photocatalytic and photoelectrochemical activity for water splitting is becoming more important in enabling an accurate comparison of a number of studies based on different systems. In the latter part, recent advances in the water splitting reaction under visible light will be presented with a focus on non-oxide semiconductor materials to give an overview of the various problems and solutions.

  9. Plasma Passivation of Compound Semiconductors for Device Applications.

    NASA Astrophysics Data System (ADS)

    Herman, Jonathan Samuel

    Plasma processing such as PECVD can be used in a variety of ways for both film deposition and surface passivation to improve the performance of solid state devices in both the silicon and compound semiconductor areas. Film properties can be improved over the conventional constant temperature uninterrupted deposition method, and plasma pretreatment can be used to alter the semiconductor surface prior to film deposition. Novel deposition techniques consisting of interrupting the SiO_2 film deposition for in -situ plasma treatments have been developed to improve the electrical behavior of the plasma SiO_2 -Si interface. The most successful of these was the two-temperature method, where the interface was formed at lower temperature than the rest of the film. Low power hydrogen plasmas were used during the temperature ramp to simulate a conventional MOS post-metallization anneal and reduce the interface trap density. Hydrogen sulfide plasmas were used to passivate the surfaces of both GaAs and InP for subsequent dielectric deposition (SiO_2). Plasma processing provides a high degree of reproducibility compared to wet chemical processes through computer control of parameters such as chamber pressure, gas flows, temperature, rf power, and exposure time. The electrical and structural properties of the interfaces were characterized with C-V, XPS, SE and PL. The H_2S treatments were more robust than similar treatments involving nitrogen plasmas. The applicability of these passivation techniques was demonstrated by fabricating metal-insulator-semiconductor FET's on GaAs and InP substrates using a fully ion implaned planar process for both inversion and depletion mode transistors. The sulfide treated samples showed considerable improvement in performance over the control samples.

  10. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

  11. Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

    PubMed

    Bonk, R; Huber, G; Vallaitis, T; Koenig, S; Schmogrow, R; Hillerkuss, D; Brenot, R; Lelarge, F; Duan, G-H; Sygletos, S; Koos, C; Freude, W; Leuthold, J

    2012-04-23

    The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

  12. Semiconductor Devices Inspired By and Integrated With Biology

    SciTech Connect

    Rogers, John

    2012-04-25

    Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt biologically inspired designs or require intimate integration with the human body. This talk describes the development of ideas for electronics that offer the performance of state-of-the-art, wafer- based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in (1) bio- integrated, ‘tissue-like’ electronics with unique capabilities for mapping cardiac and neural electrophysiology, and (2) bio-inspired, ‘eyeball’ cameras with exceptional imaging properties enabled by curvilinear, Petzval designs.

  13. Nonequilibrium drift-diffusion model for organic semiconductor devices

    NASA Astrophysics Data System (ADS)

    Felekidis, Nikolaos; Melianas, Armantas; Kemerink, Martijn

    2016-07-01

    Two prevailing formalisms are currently used to model charge transport in organic semiconductor devices. Drift-diffusion calculations, on the one hand, are time effective but assume local thermodynamic equilibrium, which is not always realistic. Kinetic Monte Carlo models, on the other hand, do not require this assumption but are computationally expensive. Here, we present a nonequilibrium drift-diffusion model that bridges this gap by fusing the established multiple trap and release formalism with the drift-diffusion transport equation. For a prototypical photovoltaic system the model is shown to quantitatively describe, with a single set of parameters, experiments probing (1) temperature-dependent steady-state charge transport—space-charge limited currents, and (2) time-resolved charge transport and relaxation of nonequilibrated photocreated charges. Moreover, the outputs of the developed kinetic drift-diffusion model are an order of magnitude, or more, faster to compute and in good agreement with kinetic Monte Carlo calculations.

  14. SEMICONDUCTOR DEVICES: Humidity sensitive organic field effect transistor

    NASA Astrophysics Data System (ADS)

    Murtaza, I.; Karimov, Kh S.; Ahmad, Zubair; Qazi, I.; Mahroof-Tahir, M.; Khan, T. A.; Amin, T.

    2010-05-01

    This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.

  15. Rigid band analysis of heavily doped semiconductor devices

    NASA Astrophysics Data System (ADS)

    Marshak, A. H.; Shibib, M. A.; Fossum, J. G.; Lindholm, F. A.

    1981-03-01

    The conventional carrier transport equations used in device analysis must be modified for heavily doped semiconductor regions. The modifications to Shockley's auxiliary equations relating the carrier densities to their corresponding quasi-Fermi levels are derived for the rigid band model. The effects of asymmetric bandgap narrowing and of carrier degeneracy (Fermi-Dirac statistics) are induced. Emphasis is placed on writing the equations in a simple form that indicates the effect of changes in the band structure due to heavy doping. In this form they can serve as a basis for computer-aided analysis and design. It is shown that, in general, the effective intrinsic carrier density as well as the electron and hole current densities depend on the asymmetry in bandgap narrowing.

  16. Conductance matrix of multiterminal semiconductor devices with edge channels

    SciTech Connect

    Danilovskii, E. Yu. Bagraev, N. T.

    2014-12-15

    A method for determining the conductance matrix of multiterminal semiconductor structures with edge channels is proposed. The method is based on the solution of a system of linear algebraic equations based on Kirchhoff equations, made up of potential differences U{sub ij} measured at stabilized currents I{sub kl}, where i, j, k, l are terminal numbers. The matrix obtained by solving the system of equations completely describes the structure under study, reflecting its configuration and homogeneity. This method can find wide application when using the known Landauer-Buttiker formalism to analyze carrier transport in the quantum Hall effect and quantum spin Hall effect modes. Within the proposed method, the contribution of the contact area resistances R{sub c} to the formation of conductance matrix elements is taken into account. The possibilities of practical application of the results obtained in developing analog cryptographic devices are considered.

  17. System for characterizing semiconductor materials and photovoltaic devices through calibration

    DOEpatents

    Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

    1998-05-26

    A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

  18. System for characterizing semiconductor materials and photovoltaic devices through calibration

    DOEpatents

    Sopori, Bhushan L.; Allen, Larry C.; Marshall, Craig; Murphy, Robert C.; Marshall, Todd

    1998-01-01

    A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

  19. Application of copper-carbon fiber composites to power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kuniya, Keiichi; Arakawa, Hideo; Sakaue, Tadashi; Minorikawa, Hitoshi; Akeyama, Kenji; Sakamoto, Tatsuji

    1988-01-01

    Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

  20. Thermoelectric Devices Advance Thermal Management

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Thermoelectric (TE) devices heat, cool, and generate electricity when a temperature differential is provided between the two module faces. In cooperation with NASA, Chico, California-based United States Thermoelectric Consortium Inc. (USTC) built a gas emissions analyzer (GEA) for combustion research. The GEA precipitated hydrocarbon particles, preventing contamination that would hinder precise rocket fuel analysis. The USTC research and design team uses patent-pending dimple, pin-fin, microchannel and microjet structures to develop and design heat dissipation devices on the mini-scale level, which not only guarantee high performance of products, but also scale device size from 1 centimeter to 10 centimeters. USTC continues to integrate the benefits of TE devices in its current line of thermal management solutions and has found the accessibility of NASA technical research to be a valuable, sustainable resource that has continued to positively influence its product design and manufacturing

  1. Metal-oxide-semiconductor field effect nanostructure spin lattice devices

    NASA Astrophysics Data System (ADS)

    Yang, Jun

    This dissertation explored and developed technologies for silicon based spin lattice devices. Spin lattices are artificial electron spin systems with a periodic structure having one to a few electrons at each site. They are expected to have various magnetic and even superconducting properties when structured at an optimal scale with a specific number i of electrons. Silicon turns out to be a very good material choice in realizing spin lattices. A metal-oxide-semiconductor field-effect nanostructure (MOSFENS) device, which is closely related to a MOS transistor but with a nanostructured oxide-semiconductor interface, can define the spin lattices potential at the interface and alter the occupation i with the gate electrode potential to change the magnetic phase. The MOSFENS spin lattices engineering challenge addressed in this work has come from the practical difficulty of process integration in modifying a transistor fabrication process to accommodate the interface patterning requirements. Two distinct design choices for the fabrication sequences that create the nanostructure have been examined. Patterning the silicon surface before the MOS gate stack layers gives a "nanostructure first" process, and patterning the interface after forming the gate stack gives a "nanostructure last process." Both processes take advantage of a nano-LOCOS (nano-local oxidation of silicon) invention developed in this work. The nano-LOCOS process plays a central role in defining a clean, sharp confining potential for the spin lattice electrons. The MOSFENS process required a basic transistor fabrication process that can accommodate the nanostructures. The process developed for this purpose has a gate stack with a 15 nm polysilicon gate electrode and a 3 nm thermal gate oxide on a p-type silicon substrate. The measured threshold voltage is 0.25 V. Device processes were examined for either isolating the devices with windows in the field oxide or with mesas defined by the etched trenches

  2. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  3. III-V aresenide-nitride semiconductor materials and devices

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  4. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

  5. Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

    SciTech Connect

    McPherson, J. W.

    2015-11-28

    The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field E{sub diel} occurs and this causes a sharp rise in the effective Lorentz factor L{sub eff}. At capacitor and transistor edges, L{sub eff} is found to increase to a value 2/3 < L{sub eff} < 1. The increase in L{sub eff} results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has important time-dependent dielectric breakdown (TDDB) implications for all electronic devices utilizing polar materials, including GaN devices that suffer from device-edge TDDB.

  6. An investigation of corrosion in semiconductor bridge explosive devices.

    SciTech Connect

    Klassen, Sandra Ellen; Sorensen, Neil Robert

    2007-05-01

    In the course of a failure investigation, corrosion of the lands was occasionally found in developmental lots of semiconductor bridge (SCB) detonators and igniters. Evidence was found in both detonators and igniters of the gold layer being deposited on top of a corroded aluminum layer, but inspection of additional dies from the same wafer did not reveal any more corroded parts. In some detonators, evidence was found that corrosion of the aluminum layer also happened after the gold was deposited. Moisture and chloride must both be present for aluminum to corrode. A likely source for chloride is the adhesive used to bond the die to the header. Inspection of other SCB devices, both recently manufactured and manufactured about ten years ago, found no evidence for corrosion even in devices that contained SCBs with aluminum lands and no gold. Several manufacturing defects were noted such as stains, gouges in the gold layer due to tooling, and porosity of the gold layer. Results of atmospheric corrosion experiments confirmed that devices with a porous gold layer over the aluminum layer are susceptible to extensive corrosion when both moisture and chlorine are present. The extent of corrosion depends on the level of chlorine contamination, and corrosion did not occur when only moisture was present. Elimination of the gold plating on the lands eliminated corrosion of the lands in these experiments. Some questions remain unanswered, but enough information was gathered to recommend changes to materials and procedures. A second lot of detonators was successfully built using aluminum SCBs, limiting the use of Ablebond{trademark} adhesive, increasing the rigor in controlling exposure to moisture, and adding inspection steps.

  7. Atomically Flat Surfaces Developed for Improved Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony

    2001-01-01

    New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the

  8. SEMICONDUCTOR DEVICES: CuPc/C60 heterojunction thin film optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Murtaza, Imran; Qazi, Ibrahim; Karimov, Khasan S.

    2010-06-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

  9. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  10. EDITORIAL: Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications

    NASA Astrophysics Data System (ADS)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-04-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10

  11. Electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  12. Ultrafast laser trimming for reduced device leakage in high performance OTFT semiconductors for flexible displays

    NASA Astrophysics Data System (ADS)

    Karnakis, Dimitris; Cooke, Michael D.; Chan, Y. F.; Ogier, Simon D.

    2013-03-01

    Organic semiconductors (OSC) are solution processable synthetic materials with high carrier mobility that promise to revolutionise flexible electronics manufacturing due to their low cost, lightweight and high volume low temperature printing in reel-to-reel (R2R) [1] for applications such as flexible display backplanes (Fig.1), RFID tags, and logic/memory devices. Despite several recent technological advances, organic thin film transistor (OTFT) printing is still not production-ready due to limitations mainly with printing resolution on dimensionally unstable substrates and device leakage that reduces dramatically electrical performance. OTFTs have the source-drain in ohmic contact with the OSC material to lower contact resistance. If they are unpatterned, a leakage pathway from source to drain develops which results in non-optimum on/off currents and not controllable device uniformity (Fig.2). DPSS lasers offer several key advantages for OTFT patterning including maskless, non-contact, dry patterning, scalable large area operation with precision registration, well-suited to R2R manufacturing at overall μm size resolutions. But the thermal management of laser processing is very important as the devices are very sensitive to heat and thermomechanical damage [2]. This paper discusses 343nm picosecond laser ablation trimming of 50nm thick PTAA, TIPS pentacene and other semiconductor compounds on thin 50nm thick metal gold electrodes in a top gate configuration. It is shown that with careful optimisation, a suitable process window exists resulting in clean laser structuring without damage to the underlying layers while also containing laser debris. Several order of magnitude improvements were recorded in on/off currents up to 106 with OSC mobilities of 1 cm2/Vsec, albeit at slightly higher than optimum threshold voltages which support demanding flexible display backplane applications.

  13. Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Bauer, Friedhelm D.

    2009-06-01

    A new, simple and efficient approach is presented to conduct estimations of the cosmic ray induced failure rate for high voltage silicon power devices early in the design phase. This allows combining common design issues such as device losses and safe operating area with the constraints imposed by the reliability to result in a better and overall more efficient design methodology. Starting from an experimental and theoretical background brought forth a few yeas ago [Kabza H et al. Cosmic radiation as a cause for power device failure and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 9-12, Zeller HR. Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 339-40, and Matsuda H et al. Analysis of GTO failure mode during d.c. blocking. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 221-5], an exact solution of the failure rate integral is derived and presented in a form which lends itself to be combined with the results available from commercial semiconductor simulation tools. Hence, failure rate integrals can be obtained with relative ease for realistic two- and even three-dimensional semiconductor geometries. Two case studies relating to IGBT cell design and planar junction termination layout demonstrate the purpose of the method.

  14. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    PubMed

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance. PMID:25992464

  15. Production of films and powders for semiconductor device applications

    DOEpatents

    Bhattacharya, Raghu Nath; Noufi, Rommel; Wang, Li

    1998-01-01

    A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.

  16. Production of films and powders for semiconductor device applications

    DOEpatents

    Bhattacharya, R.N.; Noufi, R.; Li Wang

    1998-03-24

    A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

  17. George E. Pake Prize: A Few Challenges in the Evolution of Semiconductor Device/Manufacturing Technology

    NASA Astrophysics Data System (ADS)

    Doering, Robert

    In the early 1980s, the semiconductor industry faced the related challenges of ``scaling through the one-micron barrier'' and converting single-level-metal NMOS integrated circuits to multi-level-metal CMOS. Multiple advances in lithography technology and device materials/process integration led the way toward the deep-sub-micron transistors and interconnects that characterize today's electronic chips. In the 1990s, CMOS scaling advanced at an accelerated pace enabled by rapid advances in many aspects of optical lithography. However, the industry also needed to continue the progress in manufacturing on ever-larger silicon wafers to maintain economy-of-scale trends. Simultaneously, the increasing complexity and absolute-precision requirements of manufacturing compounded the necessity for new processes, tools, and control methodologies. This talk presents a personal perspective on some of the approaches that addressed the aforementioned challenges. In particular, early work on integrating silicides, lightly-doped-drain FETs, shallow recessed isolation, and double-level metal will be discussed. In addition, some pioneering efforts in deep-UV lithography and single-wafer processing will be covered. The latter will be mainly based on results from the MMST Program - a 100 M +, 5-year R&D effort, funded by DARPA, the U.S. Air Force, and Texas Instruments, that developed a wide range of new technologies for advanced semiconductor manufacturing. The major highlight of the program was the demonstration of sub-3-day cycle time for manufacturing 350-nm CMOS integrated circuits in 1993. This was principally enabled by the development of: (1) 100% single-wafer processing, including rapid-thermal processing (RTP), and (2) computer-integrated-manufacturing (CIM), including real-time, in-situ process control.

  18. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  19. Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

    PubMed

    Kim, Dong Uk; Park, Kwan Seob; Jeong, Chan Bae; Kim, Geon Hee; Chang, Ki Soo

    2016-06-27

    Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.

  20. Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

    PubMed

    Kim, Dong Uk; Park, Kwan Seob; Jeong, Chan Bae; Kim, Geon Hee; Chang, Ki Soo

    2016-06-27

    Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation. PMID:27410553

  1. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  2. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  3. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  4. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  5. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    DOEpatents

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  6. More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging

    SciTech Connect

    2010-02-01

    Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

  7. Oxide semiconductor thin-film transistors: a review of recent advances.

    PubMed

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  8. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  9. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  10. Women's Presence in the Development of Semiconductor Physics and Semiconductor Devices Research in Cuba (abstract)

    NASA Astrophysics Data System (ADS)

    Vigil, Elena

    2009-04-01

    Physics research did not exist in prerevolutionary Cuba. In 1962, Cuban university programs were reformed and Havana University's School of Physics was created. Equal opportunities for women and science development were made high priorities during university reform. In the early 1960s the growth of physics research began, particularly in semiconductors. This research is reviewed, emphasizing the presence and accomplishments of the women involved. Women physicists havr authored papers regarding the first alloyed semiconductor diode in 1967; IREs and LEDs (discrete, as well as integrated digits) in the 1970s; epitaxial growth in space; and LED and IRE technology transfer to the Cuban semiconductor industry in the 1980s. Women's current active role in solar cell research is also reviewed.

  11. Semiconductor Devices and Applications. Electronics Module 5. Instructor's Guide.

    ERIC Educational Resources Information Center

    Chappell, John; And Others

    This module is the fifth of 10 modules in the competency-based electronics series. Introductory materials include a listing of competencies addressed in the module, a parts/equipment list, and a cross-reference table of instructional materials. Sixteen instructional units cover: semiconductor materials; diodes; diode applications and…

  12. The structure of constitutive equations for semiconductor devices

    SciTech Connect

    Buchanan, G.R.; Girrens, S.P.; Bennett, J.G.

    1987-01-01

    The fundamental equations that describe carrier transport in semiconductor materials are developed using the methods of continuum mixture theory and Maxwell's equations for electrodynamics. There are five basic equations that govern the behavior of current flux, electrostatic potential, electrons, and holes. The bahavior of the electrical chemical potentials are introduced and their relation to the current flux is discussed.

  13. High Temperature Superconductor/Semiconductor Hybrid Microwave Devices and Circuits

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Miranda, Felix A.

    1999-01-01

    Contents include following: film deposition technique; laser ablation; magnetron sputtering; sequential evaporation; microwave substrates; film characterization at microwave frequencies; complex conductivity; magnetic penetration depth; surface impedance; planar single-mode filters; small antennas; antenna arrays phase noise; tunable oscillations; hybrid superconductor/semiconductor receiver front ends; and noise modeling.

  14. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOEpatents

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1988-06-16

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  15. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

    1989-01-01

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  16. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J

    2013-08-13

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

  17. Solid state technology: A compilation. [on semiconductor devices

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A compilation, covering selected solid state devices developed and integrated into systems by NASA to improve performance, is presented. Data are also given on device shielding in hostile radiation environments.

  18. Advanced Electro-Optic Surety Devices

    SciTech Connect

    Watterson, C.E.

    1997-05-01

    The Advanced Electro-Optic Surety Devices project was initiated in march 1991 to support design laboratory guidance on electro-optic device packaging and evaluation. Sandia National Laboratory requested AlliedSignal Inc., Kansas City Division (KCD), to prepare for future packaging efforts in electro-optic integrated circuits. Los Alamos National Laboratory requested the evaluation of electro-optic waveguide devices for nuclear surety applications. New packaging techniques involving multiple fiber optic alignment and attachment, binary lens array development, silicon V-groove etching, and flip chip bonding were requested. Hermetic sealing of the electro-optic hybrid and submicron alignment of optical components present new challenges to be resolved. A 10-channel electro-optic modulator and laser amplifier were evaluated for potential surety applications.

  19. Advanced devices and systems for radiation measurements

    SciTech Connect

    Knoll, G.F.; Wehe, D.K.; He, Z.; Barrett, C.; Miyamoto, J.

    1996-06-01

    The authors` most recent work continues their long-standing efforts to develop semiconductor detectors based on the collection of only a single type of charge carrier. Their best results are an extension of the principle of coplanar electrodes first described by Paul Luke of Lawrence Berkeley Laboratory 18 months ago. This technique, described in past progress reports, has the effect of deriving an output signal from detectors that depends only on the motion of carriers close to one surface. Since nearly all of these carriers are of one type (electrons) that are attracted to that electrode, the net effect is to nearly eliminate the influence of hole motion on the properties of the output signal. The result is that the much better mobility of electrons in compound semiconductors materials such as CZT can now be exploited without the concurrent penalty of poor hole collection. They have also developed new techniques in conjunction with the coplanar electrode principle that extends the technique into a new dimension. By proper processing of signals from the opposite electrode (the cathode) from the coplanar surface, they are able to derive a signal that is a good indication of the depth of interaction at which the charge carriers were initially formed. They have been the first group to demonstrate this technique, and examples of separate pulse height spectra recorded at a variety of different depths of interaction are shown in several of the figures that follow. Obtaining depth information is one step in the direction of obtaining volumetric point-of-interaction information from the detector. If one could known the coordinates of each specific interaction, then corrections could be applied to account for the inhomogeneities that currently plague many room-temperature devices.

  20. Semiconductor laser devices having lateral refractive index tailoring

    DOEpatents

    Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1990-01-01

    A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

  1. Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

    NASA Technical Reports Server (NTRS)

    Kressel, Henry (Inventor); D'Aiello, Robert Vincent (Inventor); Robinson, Paul Harvey (Inventor)

    1978-01-01

    A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

  2. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  3. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  4. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  5. Exploring the Electronic Landscape at Interfaces and Junctions in Semiconductor Nanowire Devices with Subsurface Local Probing of Carrier Dynamics

    NASA Astrophysics Data System (ADS)

    McGuckin, Terrence

    The solid state devices that are pervasive in our society, are based on building blocks composed of interfaces between materials and junctions that manipulate how charge carriers behave in a device. As the dimensions of these devices are reduced to the nanoscale, surfaces and interfaces play a larger role in the behavior of carriers in devices and must be thoroughly investigated to understand not only the material properties but how these materials interact. Separating the effects of these different building blocks is a challenge, as most testing methods measure the performance of the whole device. Semiconductor nanowires represent an excellent test system to explore the limits of size and novel device structures. The behavior of charge carriers in semiconductor nanowire devices under operational conditions is investigated using local probing technique electron beam induced current (EBIC). The behavior of locally excited carriers are driven by the forces of drift, from electric fields within a device at junctions, surfaces, contacts and, applied voltage bias, and diffusion. This thesis presents the results of directly measuring these effects spatially with nanometer resolution, using EBIC in Ge, Si, and complex heterostructure GaAs/AlGaAs nanowire devices. Advancements to the EBIC technique, have pushed the resolution from tens of nanometers down to 1 to 2 nanometers. Depth profiling and tuning of the interaction volume allows for the separating the signal originating from the surface and the interior of the nanowire. Radial junctions and variations in bands can now be analyzed including core/shell hetero-structures. This local carrier probing reveals a number of surprising behaviors; Most notably, directly imaging the evolution of surface traps filling with electrons causing bandbending at the surface of Ge nanowires that leads to an enhancement in the charge separation of electrons and holes, and extracting different characteristic lengths from GaAs and AlGaAs in

  6. Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

    PubMed Central

    Liu, Changjiang; Patel, Sahil J.; Peterson, Timothy A.; Geppert, Chad C.; Christie, Kevin D.; Stecklein, Gordon; Palmstrøm, Chris J.; Crowell, Paul A.

    2016-01-01

    A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (<100 ps), a regime that is not accessible in semiconductors using traditional Hanle techniques. PMID:26777243

  7. Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

    DOEpatents

    Farino, Anthony J.

    2004-01-27

    A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.

  8. SEMICONDUCTOR DEVICES: Guided modes in a rectangular waveguide with semiconductor metamaterial

    NASA Astrophysics Data System (ADS)

    Tingting, Tang; Fushen, Chen; Bao, Sun

    2010-05-01

    The dispersion equations of bulk modes and surface modes in a rectangular waveguide of semiconductor metamaterial are derived by a modified “Marcatili's method". The cutoff frequencies of the lowest TM bulk mode are discussed, and the Brillouin diagrams of different bulk modes are drawn. They demonstrate that different heights correspond to different guidance frequency ranges which have no superposition with each other and a waveguide with a larger height possesses a wider passband of light. In addition, tendencies of degeneracy for different modes are observed. Finally, the existence of surface modes is verified by a graphical method.

  9. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  10. Towards manufacturing of advanced logic devices by double-patterning

    NASA Astrophysics Data System (ADS)

    Koay, Chiew-seng; Halle, Scott; Holmes, Steven; Petrillo, Karen; Colburn, Matthew; van Dommelen, Youri; Jiang, Aiqin; Crouse, Michael; Dunn, Shannon; Hetzer, David; Kawakami, Shinichiro; Cantone, Jason; Huli, Lior; Rodgers, Martin; Martinick, Brian

    2011-04-01

    As reported previously, the IBM Alliance has established a DETO (Double-Expose-Track-Optimized) baseline, in collaboration with ASML, TEL, and CNSE, to evaluate commercially available DETO photoresist system for the manufacturing of advanced logic devices. Although EUV lithography is the baseline strategy for <2x nm logic nodes, alternative techniques are still being pursued. The DETO technique produces pitch-split patterns capable of supporting 16 nm and 11 nm node semiconductor devices. We present the long-term monitoring performances of CD uniformity (CDU), overlay, and defectivity of our DETO process. CDU and overlay performances for controlled experiments are also presented. Two alignment schemes in DETO are compared experimentally for their effects on inter-level & intralevel overlays, and space CDU. We also experimented with methods for improving CDU, in which the CD-OptimizerTMand DoseMapperTM were evaluated separately and in tandem. Overlay improvements using the Correction Per Exposure (CPE) and the intra-field High-Order Process Correction (i-HOPC) were compared against the usual linear correction method. The effects of the exposure field size are also compared between a small field and the full field. Included in all the above, we also compare the performances derived from stack-integrated wafers and bare-Si wafers.

  11. Investigation of radiation effects on semiconductor devices and integrated circuits

    NASA Astrophysics Data System (ADS)

    Shanfield, Zef; Srour, Joseph R.; Moriwaki, Melvin; Kitazaki, Kerry S.; Hartmann, Robert A.

    1988-09-01

    Results of a study of radiation effects on electronic materials, devices, and integrated circuits are presented in this report. Emphasis was placed on determining the underlying mechanisms responsible for observed radiation effects with a view toward gaining understanding of value in the development of radiation-hardened devices. Measurements and analyses were made of the effects of single energetic neutrons and protons on silicon integrated circuits. In addition, a detailed description is given of the effects of radiation-induced displacement damage on device depletion regions. Single event upset studies included charge collection and transient current measurements on Si and GaAs devices following a single alpha-particle strike. The angular dependence of charge funneling was also investigated. The mechanisms of ionizing radiation effects on Si MOS devices were explored in detail using the thermally stimulated current technique and other measurement approaches. Data obtained by several techniques show that use of the radiation-induced shift of the capacitance-voltage curve at midgap is not generally valid for determining oxide trapped charge.

  12. Total-dose radiation effects data for semiconductor devices (1989 supplement)

    NASA Technical Reports Server (NTRS)

    Martin, Keith E.; Coss, James R.; Goben, Charles A.; Shaw, David C.; Farmanesh, Sam; Davarpanah, Michael M.; Craft, Leroy H.; Price, William E.

    1990-01-01

    Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

  13. 77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-29

    ...Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Semiconductor Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is soliciting comments on any public interest issues raised by the complaint or complainant's filing under section 210.8(b) of the Commission's Rules of Practice and Procedure (19 CFR......

  14. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  15. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  16. Ferromagnet-semiconductor device with tunable tunnel characteristics

    NASA Astrophysics Data System (ADS)

    Heide, C.

    2000-05-01

    A device is proposed consisting of a GaAs/AlxGa1-xAs heterostructure with a ferromagnetic strip placed on top that has an easy axis of magnetization perpendicular to the underlying two-dimensional electron gas. In addition, the strip is gated to form a combined magnetostatic and electrostatic barrier for the conduction electrons. On the basis of a simple model, which is of the Landauer-Büttiker type, such a structure is shown to have three different regimes of operation. Whereas for a certain regime, electrons can move according to the classical diamagnetic motion, there is also the possibility of tuning the device between nonresonant and resonant tunneling behavior. In the latter case the combined magnetostatic and electrostatic barrier acts as an energy and momentum filter. The proposed device could find application in digital logic circuits as an electromagnetic field-effect transistor.

  17. Wide-Bandgap Semiconductor Devices for Automotive Applications

    NASA Astrophysics Data System (ADS)

    Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

    2007-06-01

    In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

  18. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  19. System for characterizing semiconductor materials and photovoltaic device

    DOEpatents

    Sopori, B.L.

    1996-12-03

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device. 22 figs.

  20. System for characterizing semiconductor materials and photovoltaic device

    DOEpatents

    Sopori, Bhushan L.

    1996-01-01

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device.

  1. Oxide charge accumulation in metal oxide semiconductor devices during irradiation

    SciTech Connect

    Lee, D. ); Chan, C. )

    1991-05-15

    An analysis of a simple physical model for radiation induced oxide charge accumulation in the SiO{sub 2} layer of metal oxide semiconductor (MOS) structure has been developed. The model assumes that both electron and hole traps exist in the oxide layer. These traps can capture electrons as well as holes during irradiation. Using this model, final oxide charge distributions in the oxide layer of MOS capacitors exposed to a total dose radiation can be predicted. The resulting charge distribution is calculated to yield the midgap voltage shifts as functions of total dose, bias voltage, and oxide thickness. The results are shown to agree well with the experimental data. Furthermore, the model successfully analyzes the radiation-induced negative oxide charge distribution in an ion-implanted, radiation-hard MOS capacitor. These negative oxide charge distributions not only partially compensate the effects of trapped positive oxide charges but also reduced the density of positive oxide charges trapped near the Si/SiO{sub 2} interface. We found the reduction of the positive oxide charge density near the Si/SiO{sub 2} interface is due to internal electric field modification in the oxide layer.

  2. Accelerated Aging System for Prognostics of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

    2010-01-01

    Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

  3. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  4. A technique for optimizing the design of power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.

    1976-01-01

    A technique is described that provides a basis for predicting whether any device design change will improve or degrade the unavoidable trade-off that must be made between the conduction loss and the turn-off speed of fast-switching high-power thyristors. The technique makes use of a previously reported method by which, for a given design, this trade-off was determined for a wide range of carrier lifetimes. It is shown that by extending this technique, one can predict how other design variables affect this trade-off. The results show that for relatively slow devices the design can be changed to decrease the current gains to improve the turn-off time without significantly degrading the losses. On the other hand, for devices having fast turn-off times design changes can be made to increase the current gain to decrease the losses without a proportionate increase in the turn-off time. Physical explanations for these results are proposed.

  5. Present status and prospects of R&D of radiation-resistant semiconductor devices at JAEA

    NASA Astrophysics Data System (ADS)

    Itoh, H.

    2013-05-01

    Research and development of radiation resistant semiconductor devices have been performed at Japan Atomic Energy Agency (JAEA) for their application to electronic system used in harsh environments like space, accelerator and nuclear facilities. Such devices are also indispensable for robots and equipment necessary for decommissioning of the damaged reactors at Fukushima Daiichi Nuclear Power Plants. For this purpose, we have fabricated transistors based on a wide band-gap semiconductor SiC and examined their radiation degradation. As a result, SiC-based transistors exhibited no significant degradation up to 1MGy, indicating their excellent radiation resistance. Recent our R&Ds of radiation resistant devices based on SiC are summarized and reviewed.

  6. Method of making suspended thin-film semiconductor piezoelectric devices

    DOEpatents

    Casalnuovo, Stephen A.; Frye-Mason, Gregory C.

    2001-01-01

    A process for forming a very thin suspended layer of piezoelectric material of thickness less than 10 microns. The device is made from a combination of GaAs and AlGaAs layers to form either a sensor or an electronic filter. Onto a GaAs substrate is epitaxially deposited a thin (1-5 micron) sacrificial AlGaAs layer, followed by a thin GaAs top layer. In one embodiment the substrate is selectively etched away from below until the AlGaAs layer is reached. Then a second selective etch removes the sacrificial AlGaAs layer, that has acted here as an etch stop, leaving the thin suspended layer of piezoelectric GaAs. In another embodiment, a pattern of small openings is etched through the thin layer of GaAs on top of the device to expose the sacrificial AlGaAs layer. A second selective etch is done through these openings to remove the sacrificial AlGaAs layer, leaving the top GaAs layer suspended over the GaAs substrate. A novel etchant solution containing a surface tension reducing agent is utilized to remove the AlGaAs while preventing buildup of gas bubbles that would otherwise break the thin GaAs layer.

  7. Spectroscopy of semiconductor meta-device building blocks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Butakov, Nikita A.; Schuller, Jon A.

    2015-09-01

    Inspired by the potential of designing highly efficient nanophotonic optical elements, numerous researchers are currently exploring the use of dielectric resonators in constructing meta-devices. A wide range of optical components have been demonstrated, including metasurfaces that act as two-dimensional lenses, gratings, and axicons. At the core of these devices is a dielectric building block, typically a Silicon nano-disk or nano-rod, that supports Mie-like leaky mode excitations with a geometrically tunable amplitude and phase response. Here we present a comprehensive experimental characterization of these building blocks. We elucidate their multipolar mode structure, and explain the dependence on the underlying substrate. We find that fundamentally new buried magnetic modes emerge in high-index substrates, and that Fabry-Perot effects in silicon-on-insulator platforms can be utilized to enhance or suppress specific modes. When individual resonators are arranged into arrays with sub-wavelength periodicities, inter-particle coupling leads to a shift in the resonant response. When the periodicities are on the same order as the operating wavelength, the localized resonances may couple with the global diffraction modes, leading to the possible formation of distinct high-quality-factor surface-lattice-resonant modes, similar to those encountered in plasmonic gratings. We conclude by exploring the behavior of resonators constructed out of active materials, such as polar materials that support phonon-polariton excitations, and phase-change materials with tunable dielectric constants.

  8. Total-dose radiation effects data for semiconductor devices, volume 1. [radiation resistance of components for the Galileo Project

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1981-01-01

    Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

  9. Development of advanced electron holographic techniques and application to industrial materials and devices.

    PubMed

    Yamamoto, Kazuo; Hirayama, Tsukasa; Tanji, Takayoshi

    2013-06-01

    The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming important techniques for materials science and device engineering. We also describe some applications of electron holography to the analysis of industrial materials and devices: GaAs compound semiconductors, solid oxide fuel cells and all-solid-state lithium ion batteries.

  10. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  11. Investigation of plasma etch induced damage in compound semiconductor devices

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Hetherington, D.L.; Rieger, D.J.; Vawter, G.A.; Klem, J.F.; Melloch, M.R.

    1993-11-01

    We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching. A variety of plasma chemistries (SiCl{sub 4}, BCl{sub 3}, BCl{sub 3}/Cl{sub 2}, and Cl{sub 2}) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the RIE BCl{sub 3}/Cl{sub 2} plasmas and RIBE Cl{sub 2} plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

  12. Distributed and coupled 2D electro-thermal model of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Belkacem, Ghania; Lefebvre, Stéphane; Joubert, Pierre-Yves; Bouarroudj-Berkani, Mounira; Labrousse, Denis; Rostaing, Gilles

    2014-05-01

    The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor devices which provide protection may operate in shortcircuit and act as a current limiting device. This mode of operations is very constraining due to the large dissipation of power. In these particular conditions of operation, electro-thermal models of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors based on the coupling between two computation softwares (Matlab and Cast3M) is described in this paper. The 2D electro-thermal model is able to predict (i) the temperature distribution on chip surface well as in the volume under short-circuit operations, (ii) the effect of the temperature on the distribution of the current flowing within the die and (iii) the effects of the ageing of the metallization layer on the current density and the temperature. In this paper, the electrical and thermal models are described as well as the implemented coupling scheme.

  13. SEMICONDUCTOR DEVICES: Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

    NASA Astrophysics Data System (ADS)

    Bin, Chen; Yintang, Yang; Yuejin, Li; Hongxia, Liu

    2010-06-01

    Based on thermionic emission theory, a model of a 6H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector is established with the simulation package ISE-TCAD. A device with 3 μm electrode width (W) and 3 μm electrode spacing (L) is simulated. The findings show that the MSM photodetector has quite a low dark current of 15 pA at 10 V bias and the photocurrent is two orders of magnitude higher than the dark current. The influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device parameters. Simulation results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W = 6 μm, L = 3 μm and W = 3 μm, L = 6 μm, respectively.

  14. Device processing of wide bandgap semiconductors - challenges and directions

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; Zolper, J.C.

    1997-10-01

    The wide gap materials SiC, GaN and to a lesser extent diamond are attracting great interest for high power/high temperature electronics. There are a host of device processing challenges presented by these materials because of their physical and chemical stability, including difficulty in achieving stable, low contact resistances, especially for one conductivity type, absence of convenient wet etch recipes, generally slow dry etch rates, the high temperatures needed for implant activation, control of suitable gate dielectrics and the lack of cheap, large diameter conducting and semi-insulating substrates. The relatively deep ionization levels of some of the common dopants (Mg, in GaN; B, Al in SiC; P in diamond) means that carrier densities may be low at room temperature even if the impurity is electrically active - this problem will be reduced at elevated temperature, and thus contact resistances will be greatly improved provided the metallization is stable and reliable. Some recent work with CoSi{sub x} on SiC and W-alloys on GaN show promise for improved ohmic contacts. The issue of unintentional hydrogen passivation of dopants will also be covered - this leads to strong increases in resistivity of p-SiC and GaN, but to large decreases in resistivity of diamond. Recent work on development of wet etches has found recipes for AlN (KOH), while photochemical etching of SiC and GaN has been reported. In the latter cases p-type materials is not etched, which can be a major liability in some devices. The dry etch results obtained with various novel reactors, including ICP, ECR and LE4 will be compared - the high ion densities in the former techniques produce the highest etch rates for strongly-bonded materials, but can lead to preferential loss of N from the nitrides and therefore to a highly conducting surface. This is potentially a major problem for fabrication of dry etched, recessed gate FET structures.

  15. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  16. Energy Models for One-Carrier Transport in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Jerome, Joseph W.; Shu, Chi-Wang

    1991-01-01

    Moment models of carrier transport, derived from the Boltzmann equation, made possible the simulation of certain key effects through such realistic assumptions as energy dependent mobility functions. This type of global dependence permits the observation of velocity overshoot in the vicinity of device junctions, not discerned via classical drift-diffusion models, which are primarily local in nature. It was found that a critical role is played in the hydrodynamic model by the heat conduction term. When ignored, the overshoot is inappropriately damped. When the standard choice of the Wiedemann-Franz law is made for the conductivity, spurious overshoot is observed. Agreement with Monte-Carlo simulation in this regime required empirical modification of this law, or nonstandard choices. Simulations of the hydrodynamic model in one and two dimensions, as well as simulations of a newly developed energy model, the RT model, are presented. The RT model, intermediate between the hydrodynamic and drift-diffusion model, was developed to eliminate the parabolic energy band and Maxwellian distribution assumptions, and to reduce the spurious overshoot with physically consistent assumptions. The algorithms employed for both models are the essentially non-oscillatory shock capturing algorithms. Some mathematical results are presented and contrasted with the highly developed state of the drift-diffusion model.

  17. Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

    NASA Astrophysics Data System (ADS)

    Pavlov, Y. S.; Surma, A. M.; Lagov, P. B.; Fomenko, Y. L.; Geifman, E. M.

    2016-09-01

    Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices of different classes with wide range of operating currents (from a few mA to tens kA) and voltages (from a few volts to 8 kV) were processed in large scale including power diodes and thyristors, high-frequency bipolar and IGBT transistors, fast recovery diodes, pulsed switching diodes, precise temperature- compensated Zener diodes (in general more than fifty 50 device types), produced by different enterprises. The necessary changes in electrical parameters and characteristics of devices caused by formation in the device structures of electrically active and stable in the operating temperature range sub-nanoscale recombination centres. Technologies implemented in the air with high efficiency and controllability, and are an alternative to diffusion doping of Au or Pt, γ-ray, proton and low-Z ion irradiation.

  18. Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

    SciTech Connect

    Cheng, K. Y.

    2013-09-15

    Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.

  19. An efficient method-of-lines simulation procedure for organic semiconductor devices.

    PubMed

    Rogel-Salazar, J; Bradley, D D C; Cash, J R; Demello, J C

    2009-03-14

    We describe an adaptive grid method-of-lines (MOL) solution procedure for modelling charge transport and recombination in organic semiconductor devices. The procedure we describe offers an efficient, robust and versatile means of simulating semiconductor devices that allows for much simpler coding of the underlying equations than alternative simulation procedures. The MOL technique is especially well-suited to modelling the extremely stiff (and hence difficult to solve) equations that arise during the simulation of organic-and some inorganic-semiconductor devices. It also has wider applications in other areas, including reaction kinetics, combustion and aero- and fluid dynamics, where its ease of implementation also makes it an attractive choice. The MOL procedure we use converts the underlying semiconductor equations into a series of coupled ordinary differential equations (ODEs) that can be integrated forward in time using an appropriate ODE solver. The time integration is periodically interrupted, the numerical solution is interpolated onto a new grid that is better matched to the solution profile, and the time integration is then resumed on the new grid. The efficacy of the simulation procedure is assessed by considering a single layer device structure, for which exact analytical solutions are available for the electric potential, the charge distributions and the current-voltage characteristics. Two separate state-of-the-art ODE solvers are tested: the single-step Runge-Kutta solver Radau5 and the multi-step solver ODE15s, which is included as part of the Matlab ODE suite. In both cases, the numerical solutions show excellent agreement with the exact analytical solutions, yielding results that are accurate to one part in 1 x 10(4). The single-step Radau5 solver, however, is found to provide faster convergence since its efficiency is not compromised by the periodic interruption of the time integration when the grid is updated.

  20. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    NASA Technical Reports Server (NTRS)

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  1. Semiconductor-free hot carrier devices for energy harvesting and photodetection

    NASA Astrophysics Data System (ADS)

    Gong, Tao; Munday, Jeremy

    The maximum efficiency for a single-junction solar cell is around 30% by the Shockley-Queisser (SQ) limit. The energy loss is typically through a thermalization process between the excited high-energy carriers, e.g. hot carriers, and the lattice. Therefore, the collection of the hot carriers before thermalization would allow for reduced power loss. Recently, photodetectors based on metal-semiconductor Schottky junctions have been exploiting hot electron effects to allow sub-bandgap absorption and hence show promise as near IR wavelength detectors. Here we present a simple, semiconductor-free hot carrier device based on transparent conducting oxides (TCO) electrodes. We experimentally demonstrate the hot carrier generation and extraction under monochromatic and broadband light illumination of normal and oblique incidence. Under optimized conditions, a power conversion efficiency >10% is predicted for high-energy photon excitation. The performance of the device shows further improvement by employing nanostructures, which couple the incident light into surface plasmons, leading to absorption enhancement. This semiconductor-free device provides an alternative way of energy harvesting and photodetection.

  2. Low-temperature sintering of nanoscale silver paste for semiconductor device interconnection

    NASA Astrophysics Data System (ADS)

    Bai, Guofeng

    This research has developed a lead-free semiconductor device interconnect technology by studying the processing-microstructure-property relationships of low-temperature sintering of nanoscale silver pastes. The nanoscale silver pastes have been formulated by adding organic components (dispersant, binder and thinner) into nano-silver particles. The selected organic components have the nano-particle polymeric stabilization, paste processing quality adjustment, and non-densifying diffusion retarding functions and thus help the pastes sinter to ˜80% bulk density at temperatures no more than 300°C. It has been found that the low-temperature sintered silver has better electrical, thermal and overall thermomechanical properties compared with the existing semiconductor device interconnecting materials such as solder alloys and conductive epoxies. After solving the organic burnout problems associated with the covered sintering, a lead-free semiconductor device interconnect technology has been designed to be compatible with the existing surface-mounting techniques with potentially low-cost. It has been found that the low-temperature sintered silver joints have high electrical, thermal, and mechanical performance. The reliability of the silver joints has also been studied by the 50-250°C thermal cycling experiment. Finally, the bonging strength drop of the silver joints has been suggested to be ductile fracture in the silver joints as micro-voids nucleated at microscale grain boundaries during the temperature cycling. The low-temperature silver sintering technology has enabled some benchmark packaging concepts and substantial advantages in future applications.

  3. Gene Detection in Complex Biological Media Using Semiconductor Nanorods within an Integrated Microfluidic Device.

    PubMed

    Bi, Xinyan; Adriani, Giulia; Xu, Yang; Chakrabortty, Sabyasachi; Pastorin, Giorgia; Ho, Han Kiat; Ang, Wee Han; Chan, Yinthai

    2015-10-20

    The salient optical properties of highly luminescent semiconductor nanocrystals render them ideal fluorophores for clinical diagnostics, therapeutics, and highly sensitive biochip applications. Microfluidic systems allow miniaturization and integration of multiple biochemical processes in a single device and do not require sophisticated diagnostic tools. Herein, we describe a microfluidic system that integrates RNA extraction, reverse transcription to cDNA, amplification and detection within one integrated device to detect histidine decarboxylase (HDC) gene directly from human white blood cells samples. When anisotropic semiconductor nanorods (NRs) were used as the fluorescent probes, the detection limit was found to be 0.4 ng of total RNA, which was much lower than that obtained using spherical quantum dots (QDs) or organic dyes. This was attributed to the large action cross-section of NRs and their high probability of target capture in a pull-down detection scheme. The combination of large scale integrated microfluidics with highly fluorescent semiconductor NRs may find widespread utility in point-of-care devices and multitarget diagnostics.

  4. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1988-10-04

    An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

  5. Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

    NASA Technical Reports Server (NTRS)

    Knobloch, J.

    1979-01-01

    To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

  6. A review of the physics and response models for burnout of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Orvis, W. J.; Khanaka, G. H.; Yee, J. H.

    1984-12-01

    Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors' own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed.

  7. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  8. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    PubMed

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  9. Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

    SciTech Connect

    Makarov, Vladimir I.; Khmelinskii, Igor

    2015-04-15

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

  10. Theory of Current Transients in Planar Semiconductor Devices: Insights and Applications to Organic Solar Cells

    NASA Astrophysics Data System (ADS)

    Hawks, Steven A.; Finck, Benjamin Y.; Schwartz, Benjamin J.

    2015-04-01

    Time-domain current measurements are widely used to characterize semiconductor material properties, such as carrier mobility, doping concentration, carrier lifetime, and the static dielectric constant. It is therefore critical that these measurements be theoretically understood if they are to be successfully applied to assess the properties of materials and devices. In this paper, we derive generalized relations for describing current-density transients in planar semiconductor devices at uniform temperature. By spatially averaging the charge densities inside the semiconductor, we are able to provide a rigorous, straightforward, and experimentally relevant way to interpret these measurements. The formalism details several subtle aspects of current transients, including how the electrode charge relates to applied bias and internal space charge, how the displacement current can alter the apparent free-carrier current, and how to understand the integral of a charge-extraction transient. We also demonstrate how the formalism can be employed to derive the current transients arising from simple physical models, like those used to describe charge extraction by linearly increasing voltage (CELIV) and time-of-flight experiments. In doing so, we find that there is a nonintuitive factor-of-2 reduction in the apparent free-carrier concentration that can be easily missed, for example, in the application of charge-extraction models. Finally, to validate our theory and better understand the different current contributions, we perform a full time-domain drift-diffusion simulation of a CELIV trace and compare the results to our formalism. As expected, our analytic equations match precisely with the numerical solutions to the drift-diffusion, Poisson, and continuity equations. Thus, overall, our formalism provides a straightforward and general way to think about how the internal space-charge distribution, the electrode charge, and the externally applied bias translate into a measured

  11. Advanced development of double-injection, deep-impurity semiconductor switches

    NASA Technical Reports Server (NTRS)

    Hanes, M. H.

    1987-01-01

    Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

  12. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  13. Flow measurements in semiconductor processing; New advances in measurement technology

    NASA Astrophysics Data System (ADS)

    Tison, S. A.; Calabrese, A. M.

    1998-11-01

    Gas flow measurement, control, and distribution are an integral part in meeting present and future semiconductor processing requirements (1). Changes in processing and environmental concerns have put additional pressure not only on accurate measurement of the gas flow, but also in reducing flows. To address the need for more accurate metering of gas flows, NIST has developed primary flow standards which have uncertainties of 0.1% of reading or better over the flow range of 10-9 mol/s to 10-3 mol/s (0.001 sccm to 1000 sccm). These standards have been used to test NIST-designed high repeatability flow transfer standards (2) which can be used to document and improve flow measurements in the semiconductor industry (3). In particular two flowmeters have been developed at NIST; the first is a pressure-based flow sensor and the second a Doppler-shift flowmeter, both of which can be used for in-situ calibration of thermal mass flow controllers or for direct metering of process gases.

  14. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  15. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

    PubMed

    Wang, Huaping; Yu, Gui

    2016-07-01

    Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

  16. Crystal growth of hexaferrite architecture for magnetoelectrically tunable microwave semiconductor integrated devices

    NASA Astrophysics Data System (ADS)

    Hu, Bolin

    Hexaferrites (i.e., hexagonal ferrites), discovered in 1950s, exist as any one of six crystallographic structural variants (i.e., M-, X-, Y-, W-, U-, and Z-type). Over the past six decades, the hexaferrites have received much attention owing to their important properties that lend use as permanent magnets, magnetic data storage materials, as well as components in electrical devices, particularly those operating at RF frequencies. Moreover, there has been increasing interest in hexaferrites for new fundamental and emerging applications. Among those, electronic components for mobile and wireless communications especially incorporated with semiconductor integrated circuits at microwave frequencies, electromagnetic wave absorbers for electromagnetic compatibility, random-access memory (RAM) and low observable technology, and as composite materials having low dimensions. However, of particular interest is the magnetoelectric (ME) effect discovered recently in the hexaferrites such as SrScxFe12-xO19 (SrScM), Ba2--xSrxZn 2Fe12O22 (Zn2Y), Sr4Co2Fe 36O60 (Co2U) and Sr3Co2Fe 24O41 (Co2Z), demonstrating ferroelectricity induced by the complex internal alignment of magnetic moments. Further, both Co 2Z and Co2U have revealed observable magnetoelectric effects at room temperature, representing a step toward practical applications using the ME effect. These materials hold great potential for applications, since strong magnetoelectric coupling allows switching of the FE polarization with a magnetic field (H) and vice versa. These features could lead to a new type of storage devices, such as an electric field-controlled magnetic memory. A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25--40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the

  17. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Zhang, Zhengyuan; Zhang, Zhengping

    2016-01-01

    A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p-n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

  18. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    NASA Astrophysics Data System (ADS)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  19. Advanced Microstructured Semiconductor Neutron Detectors: Design, Fabrication, and Performance

    NASA Astrophysics Data System (ADS)

    Bellinger, Steven Lawrence

    The microstructured semiconductor neutron detector (MSND) was investigated and previous designs were improved and optimized. In the present work, fabrication techniques have been refined and improved to produce three-dimensional microstructured semiconductor neutron detectors with reduced leakage current, reduced capacitance, highly anisotropic deep etched trenches, and increased signal-to-noise ratios. As a result of these improvements, new MSND detection systems function with better gamma-ray discrimination and are easier to fabricate than previous designs. In addition to the microstructured diode fabrication improvement, a superior batch processing backfill-method for 6LiF neutron reactive material, resulting in a nearly-solid backfill, was developed. This method incorporates a LiF nano-sizing process and a centrifugal batch process for backfilling the nanoparticle LiF material. To better transition the MSND detector to commercialization, the fabrication process was studied and enhanced to better facilitate low cost and batch process MSND production. The research and development of the MSND technology described in this work includes fabrication of variant microstructured diode designs, which have been simulated through MSND physics models to predict performance and neutron detection efficiency, and testing the operational performance of these designs in regards to neutron detection efficiency, gamma-ray rejection, and silicon fabrication methodology. The highest thermal-neutron detection efficiency reported to date for a solid-state semiconductor detector is presented in this work. MSNDs show excellent neutron to gamma-ray (n/γ) rejection ratios, which are on the order of 106, without significant loss in thermal-neutron detection efficiency. Individually, the MSND is intrinsically highly sensitive to thermal neutrons, but not extrinsically sensitive because of their small size. To improve upon this, individual MSNDs were tiled together into a 6x6-element array

  20. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  1. Diversionary device history and revolutionary advancements.

    SciTech Connect

    Cooper, Paul W.; Grubelich, Mark Charles

    2005-04-01

    Diversionary devices also known as flash bangs or stun grenades were first employed about three decades ago. These devices produce a loud bang accompanied by a brilliant flash of light and are employed to temporarily distract or disorient an adversary by overwhelming their visual and auditory senses in order to gain a tactical advantage. Early devices that where employed had numerous shortcomings. Over time, many of these deficiencies were identified and corrected. This evolutionary process led to today's modern diversionary devices. These present-day conventional diversionary devices have undergone evolutionary changes but operate in the same manner as their predecessors. In order to produce the loud bang and brilliant flash of light, a flash powder mixture, usually a combination of potassium perchlorate and aluminum powder is ignited to produce an explosion. In essence these diversionary devices are small pyrotechnic bombs that produce a high point-source pressure in order to achieve the desired far-field effect. This high point-source pressure can make these devices a hazard to the operator, adversaries and hostages even though they are intended for 'less than lethal' roles. A revolutionary diversionary device has been developed that eliminates this high point-source pressure problem and eliminates the need for the hazardous pyrotechnic flash powder composition. This new diversionary device employs a fuel charge that is expelled and ignited in the atmosphere. This process is similar to a fuel air or thermobaric explosion, except that it is a deflagration, not a detonation, thereby reducing the overpressure hazard. This technology reduces the hazard associated with diversionary devices to all involved with their manufacture, transport and use. An overview of the history of diversionary device development and developments at Sandia National Laboratories will be presented.

  2. Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1985-01-01

    Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

  3. Field-induced activation of metal oxide semiconductor for low temperature flexible transparent electronic device applications

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony; Haglund, Amada; Ward, Thomas Zac; Mandrus, David; Rack, Philip

    Amorphous metal-oxide semiconductors have been extensively studied as an active channel material in thin film transistors due to their high carrier mobility, and excellent large-area uniformity. Here, we report the athermal activation of amorphous indium gallium zinc oxide semiconductor channels by an electric field-induced oxygen migration via gating through an ionic liquid. Using field-induced activation, a transparent flexible thin film transistor is demonstrated on a polyamide substrate with transistor characteristics having a current ON-OFF ratio exceeding 108, and saturation field effect mobility of 8.32 cm2/(V.s) without a post-deposition thermal treatment. This study demonstrates the potential of field-induced activation as an athermal alternative to traditional post-deposition thermal annealing for metal oxide electronic devices suitable for transparent and flexible polymer substrates. Materials Science and Technology Division, ORBL, Oak Ridge, TN 37831, USA.

  4. Implantable micro-optical semiconductor devices for optical theranostics in deep tissue

    NASA Astrophysics Data System (ADS)

    Takehara, Hiroaki; Katsuragi, Yuji; Ohta, Yasumi; Motoyama, Mayumi; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2016-04-01

    Optical therapy and diagnostics using photoactivatable molecular tools are promising approaches in medical applications; however, a method for the delivery of light deep inside biological tissues remains a challenge. Here, we present a method of illumination and detection of light using implantable micro-optical semiconductor devices. Unlike in conventional transdermal light delivery methods using low-energy light (>620 nm or near-infrared light), in our method, high-energy light (470 nm) can also be used for illumination. Implanted submillimeter-sized light-emitting diodes were found to provide sufficient illumination (0.6-4.1 mW/cm2), and a complementary metal-oxide-semiconductor image sensor enabled the detection of fluorescence signals.

  5. H+-type and OH--type biological protonic semiconductors and complementary devices

    NASA Astrophysics Data System (ADS)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

    2013-10-01

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH- as proton holes. Discriminating between H+ and OH- transport has been elusive. Here, H+ and OH- transport is achieved in polysaccharide- based proton wires and devices. A H+- OH- junction with rectifying behaviour and H+-type and OH--type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH- to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

  6. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    SciTech Connect

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-11-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

  7. ARED (Advanced-Resistive Exercise Device) Update

    NASA Technical Reports Server (NTRS)

    Ploutz-Snyder, Lori

    2009-01-01

    This viewgraph presentation describes ARED which is a new hardware exercise device for use on the International Space Station. Astronaut physiological adaptations, muscle parameters, and cardiovascular parameters are also reviewed.

  8. Microfluidic Devices in Advanced Caenorhabditis elegans Research.

    PubMed

    Muthaiyan Shanmugam, Muniesh; Subhra Santra, Tuhin

    2016-01-01

    The study of model organisms is very important in view of their potential for application to human therapeutic uses. One such model organism is the nematode worm, Caenorhabditis elegans. As a nematode, C. elegans have ~65% similarity with human disease genes and, therefore, studies on C. elegans can be translated to human, as well as, C. elegans can be used in the study of different types of parasitic worms that infect other living organisms. In the past decade, many efforts have been undertaken to establish interdisciplinary research collaborations between biologists, physicists and engineers in order to develop microfluidic devices to study the biology of C. elegans. Microfluidic devices with the power to manipulate and detect bio-samples, regents or biomolecules in micro-scale environments can well fulfill the requirement to handle worms under proper laboratory conditions, thereby significantly increasing research productivity and knowledge. The recent development of different kinds of microfluidic devices with ultra-high throughput platforms has enabled researchers to carry out worm population studies. Microfluidic devices primarily comprises of chambers, channels and valves, wherein worms can be cultured, immobilized, imaged, etc. Microfluidic devices have been adapted to study various worm behaviors, including that deepen our understanding of neuromuscular connectivity and functions. This review will provide a clear account of the vital involvement of microfluidic devices in worm biology. PMID:27490525

  9. Generation and annihilation of traps in metal-oxide-semiconductor devices after negative air corona charging

    NASA Astrophysics Data System (ADS)

    Prasad, Ila; Srivastava, R. S.

    1993-07-01

    Surface and bulk traps along with positive oxide charge accumulation have been found to be generated in metal-oxide-semiconductor capacitors, when subjected to negative air corona discharge at slightly reduced pressure (≂10-1 Torr). The effects are neutralized and device quality improved when annealed at 200 °C in air. The bulk traps and a fraction of oxide charges were annealable when kept at room temperature for several months. The results have been analyzed by Nicollian-Goetzberger's conductance technique and a plausible explanation is given.

  10. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOEpatents

    Abraham, Marvin M.; Chen, Yok; Kernohan, Robert H.

    1981-01-01

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  11. TOPICAL REVIEW: Strain induced semiconductor nanotubes: from formation process to device applications

    NASA Astrophysics Data System (ADS)

    Li, Xiuling

    2008-10-01

    Semiconductor nanotubes (SNTs) represent a new class of nanotechnology building blocks. They are formed by a combination of bottom-up and top-down approaches, using strain induced self-rolling mechanism from epitaxially grown heterojunction films. This review summarizes several aspects of this emerging field, including the SNT formation process, its dependence on crystal orientation, strain direction and geometry as well as the structural, electronic and optical properties and their implications. The precise controllability of structural and spatial positioning and versatile functionality make SNTs and related three-dimensional (3D) architectures promising candidates for practical applications in next generation nanoelectronic and nanophotonic devices.

  12. Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices

    NASA Technical Reports Server (NTRS)

    Smith, Arlynn W.; Brennan, Kevin F.

    1995-01-01

    Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models can not fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations of the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship (hk)(exp 2)/2m = W(1 + alpha(W)). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(sup y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships: parabolic, Kane dispersion, and power low dispersion.

  13. Non-Parabolic Hydrodynamic Formulations for the Simulation of Inhomogeneous Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Smith, A. W.; Brennan, K. F.

    1996-01-01

    Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models cannot fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations or the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship ((hk)(exp 2)/2m = W(1 + alphaW). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(exp y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships; parabolic, Kane dispersion and power law dispersion.

  14. Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices

    NASA Astrophysics Data System (ADS)

    Wellenius, Ian Patrick

    Amorphous oxide semiconductors composed of indium gallium zinc oxide are transparent to visible light and have higher electron mobilities than conventional amorphous semiconductors, such as amorphous silicon. The advantages of higher switching speed, lack of dangling bonds leading to good electronic stability and visible spectrum transparency of amorphous oxide semiconductor devices are expected to lead to numerous applications, including transparent displays and flexible electronics. In this thesis the integration of transparent thin film transistors with transparent electroluminescent pixels was investigated. Compared with display technologies employing organic semiconductors that degrade with exposure to moisture and ultraviolet light, the all-oxide structure of this device is expected to be environmentally robust. This is believed to be the first demonstration of an integrated active matrix pixel using amorphous oxide semiconductor materials as both the light emitter and addressing circuit elements. The transparent active matrix pixel was designed, fabricated and characterized, that integrated amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with a europium-doped IGZO thin film electroluminescent (TFEL) device. The integrated circuits were fabricated using room temperature pulsed laser deposition (PLD) of IGZO and ITO thin films onto substrates of Corning 7059 glass, sputter coated with an ITO back contact and subsequent atomic layer deposited ATO high-k dielectric. A second ITO layer is deposited by PLD as a contact and interconnect layer. All deposition steps were carried out at room temperature. In addition to the integration task, an important part of this thesis concerns the investigation of europium as a dopant in different oxide hosts including gallium oxide, gadolinium oxide, and amorphous IGZO. Amorphous IGZO was chosen for the integration task since it could be deposited at room temperature, however it was found that the

  15. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures. PMID:26856789

  16. Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale.

    PubMed

    Luo, Guoping; Ren, Xingang; Zhang, Su; Wu, Hongbin; Choy, Wallace C H; He, Zhicai; Cao, Yong

    2016-03-23

    Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin-film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures.

  17. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOEpatents

    Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick Hong; Wu, Kuang Jen J.

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  18. Optimization of segmented alignment marks for advanced semiconductor fabrication processes

    NASA Astrophysics Data System (ADS)

    Wu, Qiang; Lu, Zhijian G.; Williams, Gary; Zach, Franz X.; Liegl, Bernhard

    2001-08-01

    The continued downscaling of semiconductor fabrication ground rule has imposed increasingly tighter overlay tolerances, which becomes very challenging at the 100 nm lithographic node. Such tight tolerances will require very high performance in alignment. Past experiences indicate that good alignment depends largely on alignment signal quality, which, however, can be strongly affected by chip design and various fabrication processes. Under some extreme circumstances, they can even be reduced to the non- usable limit. Therefore, a systematic understanding of alignment marks and a method to predict alignment performance based on mark design are necessary. Motivated by this, we have performed a detailed study of bright field segmented alignment marks that are used in current state-of- the-art fabrication processes. We find that alignment marks at different lithographic levels can be organized into four basic categories: trench mark, metal mark, damascene mark, and combo mark. The basic principles of these four types of marks turn out to be so similar that they can be characterized within the theoretical framework of a simple model based on optical gratings. An analytic expression has been developed for such model and it has been tested using computer simulation with the rigorous time-domain finite- difference (TD-FD) algorithm TEMPEST. Consistent results have been obtained; indicating that mark signal can be significantly improved through the optimization of mark lateral dimensions, such as segment pitch and segment width. We have also compared simulation studies against experimental data for alignment marks at one typical lithographic level and a good agreement is found.

  19. Advanced excimer laser technologies enable green semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  20. Energetic semiconductor bridge device incorporating Al/MoOx multilayer nanofilms and negative temperature coefficient thermistor chip

    NASA Astrophysics Data System (ADS)

    Zhu, Peng; Jiao, Jianshe; Shen, Ruiqi; Ye, Yinghua; Fu, Shuai; Li, Dongle

    2014-05-01

    The design, fabrication, and characterization of an energetic semiconductor bridge device are presented. The device consists of a semiconductor bridge heating element, which has been selectively coated with Al/MoOx multilayer nanofilms to enhance ignition of a conventional pyrotechnics. Integrated negative temperature coefficient thermistor chip provides protection against electromagnetic and electrostatic discharge events. The device was specifically configured to allow ease of interconnection by wire bonds and silver-filled conductive epoxy. Extensive design validation testing was performed. The device has demonstrated low, predictable firing energy and insensitivity. Al/MoOx multilayer nanofilms have no distinct influence on the electrical properties of semiconductor bridge. Nanothermite reaction provides reliable ignition by being able to ignite across a gap.

  1. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sethi, S.; Bhattacharya, P. K.

    1996-03-01

    We have studied the properties of molecular beam epitaxially (MBE)-grown Erdoped III-V semiconductors for optoelectronic applications. Optically excited Er3+ in insulating materials exhibits optical emission chiefly around 1.54 μm, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on several of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Errelated PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (double-crys-tal x-ray and transmission electron microscopy) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read-Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  2. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  3. The world's first high voltage GaN-on-Diamond power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  4. Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

    DOE PAGES

    Chen, Zhangxin; Cockburn, Bernardo; Jerome, Joseph W.; Shu, Chi-Wang

    1995-01-01

    In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to the electric field, with the so-called Runge-Kutta Discontinuous Galerkin (RKDG) method, originally devised for numerically solving multi-dimensional hyperbolic systems of conservation laws, which is applied here to the convective part of the equations. Numerical simulations showing the performance of the new method are displayed, and the results compared with those obtained by using Essentially Nonoscillatory (ENO) finite difference schemes. Frommore » the perspective of device modeling, these methods are robust, since they are capable of encompassing broad parameter ranges, including those for which shock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but we have tested them much more generally with considerable success.« less

  5. Quantum-corrected drift-diffusion models for transport in semiconductor devices

    SciTech Connect

    De Falco, Carlo; Gatti, Emilio; Lacaita, Andrea L.; Sacco, Riccardo . E-mail: riccardo.sacco@mate.polimi.it

    2005-04-10

    In this paper, we propose a unified framework for Quantum-corrected drift-diffusion (QCDD) models in nanoscale semiconductor device simulation. QCDD models are presented as a suitable generalization of the classical drift-diffusion (DD) system, each particular model being identified by the constitutive relation for the quantum-correction to the electric potential. We examine two special, and relevant, examples of QCDD models; the first one is the modified DD model named Schroedinger-Poisson-drift-diffusion, and the second one is the quantum-drift-diffusion (QDD) model. For the decoupled solution of the two models, we introduce a functional iteration technique that extends the classical Gummel algorithm widely used in the iterative solution of the DD system. We discuss the finite element discretization of the various differential subsystems, with special emphasis on their stability properties, and illustrate the performance of the proposed algorithms and models on the numerical simulation of nanoscale devices in two spatial dimensions.

  6. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

    SciTech Connect

    Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

    2014-11-24

    Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.

  7. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    SciTech Connect

    Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  8. Characterization of an oxygen plasma process for cleaning packaged semiconductor devices. Final report

    SciTech Connect

    Adams, B.E.

    1996-11-01

    The purpose of this research was to experimentally determine the operating {open_quotes}window{close_quotes} for an oxygen plasma cleaning process to be used on microelectronics components just prior to wire bonding. The process was being developed to replace one that used vapor degreasing with trichlorotrifluoroethane, an ozone-depleting substance. A Box-Behnken experimental design was used to generate data from which the oxygen plasma cleaning process could be characterized. Auger electron spectrophotometry was used to measure the contamination thickness on the dice after cleaning. An empirical equation correlating the contamination thickness on the die surface with the operating parameters of the plasma system was developed from the collected Auger data, and optimum settings for cleaning semiconductor devices were determined. Devices were also tested for undesirable changes in electrical parameters resulting from cleaning in the plasma system. An increase in leakage current occurred for bipolar transistors and diodes after exposure to the oxygen plasma. Although an increase in leakage current occurred, each device`s parameter remained well below the acceptable specification limit. Based upon the experimental results, the optimum settings for the plasma cleaning process were determined to be 200 watts of power applied for five minutes in an enclosure maintained at 0.7 torr. At these settings, all measurable contamination was removed without compromising the reliability of the devices.

  9. SEMICONDUCTOR DEVICES: Total ionizing dose effects and annealing behavior for domestic VDMOS devices

    NASA Astrophysics Data System (ADS)

    Bo, Gao; Xuefeng, Yu; Diyuan, Ren; Gang, Liu; Yiyuan, Wang; Jing, Sun; Jiangwei, Cui

    2010-04-01

    Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a “rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.

  10. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 6.High-Speed, Large-Current Power Semiconductors for Pulse Power Generation

    NASA Astrophysics Data System (ADS)

    Takata, Ikunori

    This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n+pnp+ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm2 at much higher voltage than their static breakdown values in the repetitive use more than 1011 times.

  11. Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

    NASA Astrophysics Data System (ADS)

    Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

    2016-11-01

    Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I-V curve measurements, ranging from 106-1011 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.

  12. The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport

    NASA Astrophysics Data System (ADS)

    Korman, C. E.; Noaman, B. A.

    2010-10-01

    A new model to semiconductor device electronic noise is presented in the framework of semiclassical transport theory. The salient feature of this model is that it connects the current noise characteristics directly to the physics of scattering of the semiclassical transport theory and makes no additional assumption regarding the nature of noise. Employing this approach, this work investigates the spatial origin of the current noise across two semiconductor structures. In this approach the terminal current noise is directly related to carrier scattering inside the device, which is accounted for in the Boltzmann transport equation (BTE), without the need to add Langevin noise terms to the calculations. Accordingly, it utilizes the well-established spherical harmonics expansion (SHE) technique to solve the BTE, and it combines analytical and numerical methods, in contrast with the Monte Carlo (MC) approach that employs ensemble averages of randomly generated events. The model leads to the solution of a time-dependent transient solution of the BTE with special initial and Ohmic boundary conditions that is solved in the frequency domain to directly compute the terminal current noise spectral density. It is also shown that with this approach the Nyquist theorem under thermal equilibrium conditions is recovered.

  13. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    NASA Astrophysics Data System (ADS)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  14. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    DOE PAGES

    Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; Lopez, Javier Garicia; Jaksic, Milko; Raisanen, Jyrki; Siegele, Rainer; Simon, Aliz; Vizkelethy, Gyorgy

    2016-02-08

    This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and themore » charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less

  15. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    NASA Astrophysics Data System (ADS)

    Vittone, E.; Pastuovic, Z.; Breese, M. B. H.; Garcia Lopez, J.; Jaksic, M.; Raisanen, J.; Siegele, R.; Simon, A.; Vizkelethy, G.

    2016-04-01

    This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  16. SEMICONDUCTOR DEVICES: Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

    NASA Astrophysics Data System (ADS)

    Shifeng, Zhang; Koubao, Ding; Yan, Han; Chenggong, Han; Jiaxian, Hu; Bin, Zhang

    2010-09-01

    Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented. A constant current pulse stressing test is applied to the device. Two different degradation mechanisms are identified by analysis of electrical data, technology computer-aided design (TCAD) simulations and charge pumping measurements. The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region, and the second one is due to decreased electron mobility upon interface state formation in the drift region. Both of the mechanisms are enhanced with increasing avalanche breakdown current.

  17. Simulation and Modeling of Submicron Semiconductor Devices by a New Hydrodynamic Method.

    NASA Astrophysics Data System (ADS)

    Lin, Qi.

    Robust numerical methods for the solution of the hydrodynamic model are developed and implemented for the simulation of submicron semiconductor devices. The hydrodynamic equations are reformulated into readily solvable self-adjoint forms with the aid of newly defined HD-Slotboom state variables. A new discretization strategy is developed to resolve the rapid variation in the carrier densities and carrier temperatures. The approach also yields a coefficient matrix for each discretized hydrodynamic equation, which is guaranteed to be diagonally dominant. The hydrodynamic equations are decoupled by using a Gummel block iteration method. A fixed-point iteration technique is employed to solve the discretized equations, which guarantees that each decoupled equation converges for any starting value. Furthermore, the decoupling of equations and use of the fixed-point iteration scheme obviate the need for direct solutions of large matrix equations, and thereby eliminate the need for large memory allocations. The algorithm is inherently parallel, so it can be readily implemented on parallel machines to increase computation speed. Using these methods, several simulation packages are developed for the analysis of one-dimensional (1-D) n^+-n-n^+ devices, and square electric fields, two-dimensional (2-D) & three-dimensional (3-D) MOSFET's, and two-dimensional SOI MOSFET's. Various simulation results for these devices are presented. Some one-dimensional simulation results are compared with Monte Carlo calculations, and a good agreement is observed. Also convergence, stability, and efficiency of the methods are examined by a set of numerical experiments. The device simulators are applied to investigate the hot-electron induced degradation in submicron SOI devices and EPROM's. The impact of localized interface charge on device characteristics is studied. Some measured results are used to calibrate the process parameters in the simulators so that the simulators can predict device

  18. SEMICONDUCTOR DEVICES: A new SOI high voltage device based on E-SIMOX substrate

    NASA Astrophysics Data System (ADS)

    Lijuan, Wu; Shengdong, Hu; Bo, Zhang; Zhaoji, Li

    2010-04-01

    A new NI (n+ charge islands) high voltage device structure based on E-SIMOX (epitaxy-the separation by implantation of oxygen) substrate is proposed. It is characterized by equidistant high concentration n+-regions on the top interface of the dielectric buried layer. Inversion holes caused by the vertical electric field (EV) are located in the spacing of two neighboring n+-regions on the interface by the force from lateral electric field (EL) and the compositive operation of Coulomb's forces with the ionized donors in the undepleted n+-regions. This effectively enhances the electric field of dielectric buried layer (EI) and increases breakdown voltage (VB). An analytical model of the vertical interface electric field for the NI SOI is presented, and the analytical results are in good agreement with the 2D simulative results. EI = 568 V/μm and VB = 230 V of NI SOI are obtained by 2D simulation on a 0.375-μm-thick dielectric layer and 2-μm-thick top silicon layer. The device can be manufactured by using the standard CMOS process with addition of a mask for implanting arsenic to form NI. 2-μm silicon layer can be achieved by using epitaxy SIMOX technology (E-SIMOX).

  19. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  20. SEMICONDUCTOR DEVICES: A new integrated SOI power device based on self-isolation technology

    NASA Astrophysics Data System (ADS)

    Huanmei, Gao; Xiaorong, Luo; Wei, Zhang; Hao, Deng; Tianfei, Lei

    2010-08-01

    A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

  1. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  2. Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Sudradjat, Faisal Firmansyah

    The terahertz (THz) spectral region, commonly defined as the frequency (wavelength) range between 0.3 and 10 THz (1 mm and 30 µm) has many important applications in the industrial, biomedical, and military sectors. However, due to a lack of practical semiconductor materials with adequately small bandgap energy, the development of THz light sources and photodetectors has so far been limited. In recent years, devices based on intersubband transitions between discrete energy states in quantum heterostructures have been under intense research and development to address this issue. Of particular promise in the THz range are quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which utilize intersubband transitions in specially designed quantum well (QW) structures to emit light and generate photocurrent, respectively. This research work has focused on the development of THz light sources and photodetectors using intersubband transitions in GaN/AlGaN QWs, whose basic materials properties allow for improved spectral coverage and high-temperature operation compared to existing semiconductor devices. To design the active region of QCLs and QWIPs based on inter-conduction-subband transitions in these materials, the necessary numerical tools have first been developed. Sequential tunneling, the key electronic transport mechanism of intersubband light emitters, has then been demonstrated in GaN/AlGaN QC structures. Furthermore, we have measured promising THz electroluminescence spectra from the same devices through the use of lock-in step-scan Fourier transform infrared spectroscopy. In the area of photodetectors, we have developed a novel double-step QW design in order to overcome the material limitations presented by the intrinsic internal electric fields of GaN/AlGaN QWs. With this design approach, we have experimentally demonstrated the operation of a far infrared QWIP with a peak detection wavelength of 23 µm (13 THz frequency), which is the

  3. Semiconductor nanowire devices: Novel morphologies and applications to electrogenic biological systems

    NASA Astrophysics Data System (ADS)

    Timko, Brian Paul

    The interface between nanoscale semiconductors and biological systems represents a powerful means for molecular-scale, two-way communication between these two diverse yet complementary systems. In this thesis, I present a general methodology for the synthesis of semiconductor nanowires with rationally-defined material composition and geometry. Specifically, I demonstrate that this technique can be used to fabricate silicon nanowires, hollow nanostructures (e.g. nanotubes, nanocones and branched tubular networks), and Ge/Si heterostructures that exhibit 1D hole gasses. Using bottom-up assembly techniques, nanostructures are subsequently built into arrays containing up to tens of nanowire field-effect transistors (NW-FETs) that exhibit exquisite sensitivity to local charges. Significantly, this robust assembly technique enables integration of disparate materials (e.g. n- and p-type silicon nanowires) on virtually any type of substrate. These arrays are particularly useful for integration with biological systems. I will demonstrate that at the single-cell level, silicon nanowire device arrays can be integrated with mammalian neurons. Discrete hybrid structures enable neuronal stimulation and recording at the axon, dendrite, or soma with high sensitivity and spatial resolution, while aligned arrays containing up to 50 devices can be used to measure the speed and temporal evolution of signals or to interact with a single cell as multiple inputs and outputs. I analyze the shape and magnitude of reported signals, and place within the context of previously reported results. Hybrid interfaces can also be extended to entire organs such as embryonic chicken hearts. NW-FET signals are synchronized with the beating heart, and the signal amplitude is directly related to the device sensitivity. Multiplexed measurements made from NW-FET arrays further show that signal propagation across the myocardium can be mapped, with a potential resolution significantly better than

  4. Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

    2011-01-01

    Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all

  5. SEMICONDUCTOR DEVICES A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

    NASA Astrophysics Data System (ADS)

    Peng, Zhu; Liyang, Pan; Haiming, Gu; Fengying, Qiao; Ning, Deng; Jun, Xu

    2010-10-01

    A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.

  6. Quantum filter of spin polarized states: Metal–dielectric–ferromagnetic/semiconductor device

    SciTech Connect

    Makarov, Vladimir I.; Khmelinskii, Igor

    2014-02-01

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Recently we proposed a model for the Quantum Spin-Polarized State Filter (QSPSF). The magnetic moments are transported selectively in this model, detached from the electric charge carriers. Thus, transfer of a spin-polarized state between two conductors was predicted in a system of two levels coupled by exchange interaction. The strength of the exchange interaction between the two conductive layers depends on the thickness of the dielectric layer separating them. External magnetic fields modulate spin-polarized state transfer, due to Zeeman level shift. Therefore, a linearly growing magnetic field generates a series of current peaks in a nearby coil. Thus, our spin-state filter should contain as least three nanolayers: (1) conductive or ferromagnetic; (2) dielectric; and (3) conductive or semiconductive. The spectrum of spin-polarized states generated by the filter device consists of a series of resonance peaks. In a simple case the number of lines equals S, the total spin angular momentum of discrete states in one of the coupled nanolayers. Presently we report spin-polarized state transport in metal–dielectric–ferromagnetic (MDF) and metal–dielectric–semiconductor (MDS) three-layer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-layer devices. The theoretical model is used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment averaged over the surface of the device was carried out. The model predicts the resonance structure of the signal, although at its present accuracy it cannot predict the positions of the spectral peaks.

  7. Microscopy imaging device with advanced imaging properties

    SciTech Connect

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2015-11-24

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  8. Microscopy imaging device with advanced imaging properties

    DOEpatents

    Ghosh, Kunal; Burns, Laurie; El Gamal, Abbas; Schnitzer, Mark J.; Cocker, Eric; Ho, Tatt Wei

    2016-10-25

    Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm.sup.2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 .mu.m resolution for an image of the field of view.

  9. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies

    NASA Astrophysics Data System (ADS)

    Lee, Tien-Hsi

    Wafer bonding is an attractive technology for modern semiconductor and microelectronic industry due to its variability in allowing combination of materials. Initially, the bonding of wafers of the same material, such as silicon-silicon wafer bonding has been major interest. In the meantime, research interest has shifted to the bonding of dissimilar materials such as silicon to quartz or to sapphire. Thermal stress coming from the different expansion coefficients usually is a barrier to the success of dissimilar material bonding. Thermal stress may cause debonding, sliding, cracking, thermal misfit dislocations, or film wrinkle to impair the quality of the transferred layer. This dissertation presents several effective approaches to solve the thermal stress problem. These approaches concern bonding processes (low vacuum bonding and storage), thinning (advanced ion implantation layer splitting), and annealing processes (accumulative effect of blister generation) and are combined to design the best heat-treatment cycle. For this propose the concept of hot bonding is used in order to effectively minimize the thermal mismatch of dissimilar material bonding during the bonding and thinning procedures. During the initial bonding and bond strengthening phase, the difference in the temperature between bonding and annealing processes should be decreased as much as possible to avoid excessive thermal stresses. This concept can be realized either by increasing the bonding temperature or by decreasing the annealing temperature. A thinning technique has to employed that can thin the device wafer before debonding occurs due to the thermal stress generated either from the cooling-down process in the first case or by the annealing process itself in the late case. The ion implantation layer splitting method, also known as the Smart-cutsp°ler process, developed by Bruel at LEIT in France is a practical thinning technique which satisfies the above requirement. In the study, an

  10. Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

  11. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    PubMed Central

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  12. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    PubMed Central

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-01-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

  13. Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

  14. Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

    PubMed Central

    Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

    2016-01-01

    We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies. PMID:27477841

  15. Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device.

    PubMed

    Heywood, Sarah L; Glavin, Boris A; Beardsley, Ryan P; Akimov, Andrey V; Carr, Michael W; Norman, James; Norton, Philip C; Prime, Brian; Priestley, Nigel; Kent, Anthony J

    2016-08-01

    We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1-12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies.

  16. Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

    NASA Astrophysics Data System (ADS)

    Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

    2016-08-01

    We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies.

  17. Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device.

    PubMed

    Heywood, Sarah L; Glavin, Boris A; Beardsley, Ryan P; Akimov, Andrey V; Carr, Michael W; Norman, James; Norton, Philip C; Prime, Brian; Priestley, Nigel; Kent, Anthony J

    2016-01-01

    We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1-12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies. PMID:27477841

  18. Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

    PubMed

    Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  19. Future Opportunities for Advancing Glucose Test Device Electronics

    PubMed Central

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-01-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano “ink” composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, “ink,” and continuous processing development presents the opportunity for research collaboration with medical device designers. PMID:22027300

  20. Future opportunities for advancing glucose test device electronics.

    PubMed

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-09-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano "ink" composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, "ink," and continuous processing development presents the opportunity for research collaboration with medical device designers.

  1. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security.

  2. Semiconductors for high temperature active devices: silicon, GaAs, and GaP. [For use in geothermal wells

    SciTech Connect

    Coquat, J.A.

    1980-01-01

    This paper reviews developments during the past three years in the area of high-temperature active semiconductor devices for use at 275/sup 0/C in instrumentation needed to characterize geothermal resources. Surveys of silicon bipolar, MOS, and JFET devices operated at high temperature and development work on high temperature silicon CMOS logic and DI analog circuits are reviewed. The initial results of developmental work on GaAs and GaP diodes are discussed. These efforts have identified several promising devices for high temperature applications; however, further development is required to resolve such problems as excessive leakage currents, metallization degradation, device stability, and long term aging.

  3. The Influence of the Construction of the Cooling System of Semiconductor Devices on the Watt-Hour Efficiency of DC-DC Converters

    NASA Astrophysics Data System (ADS)

    Zarębski, Janusz; Górecki, Krzysztof

    In the paper the influence of cooling conditions of semiconductor devices on the characteristics of a boost converter is considered. The form of the thermal model of semiconductor devices is proposed and some results of calculations and measurements of the characteristics of this converter are shown. The investigations were performed for the selected types of power MOSFETs operating at different cooling conditions.

  4. New photovoltaic devices based on the sensitization of p-type semiconductors: challenges and opportunities.

    PubMed

    Odobel, Fabrice; Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol

    2010-08-17

    Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect

  5. Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

    ERIC Educational Resources Information Center

    Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

    2014-01-01

    The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

  6. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  7. Advances in GaAs bistable optical devices

    NASA Astrophysics Data System (ADS)

    Jewell, J. L.; Tarng, S. S.; Gibbs, H. M.; Tai, K.; Weinberger, D. A.; Gossard, A. C.; McCall, S. L.; Passner, A.; Venkatesan, T. N. C.; Weigmann, W.

    1984-01-01

    Bistable optical devices (BOD's) using GaAs as the nonlinear medium are viable candidators for the achievement of fast ( ns), room temperature, low-power (mw), externally controllable optical switches which are easily fabricated and operated. Advances were made in all of these areas and efforts are in progress to improve performances in ways that are simultaneously compatible.

  8. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    SciTech Connect

    Gilbertson, A. M.; Cohen, L. F.; Sadeghi, Hatef; Lambert, C. J.; Panchal, V.; Kazakova, O.; Solin, S. A.

    2015-12-07

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  9. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    NASA Astrophysics Data System (ADS)

    Gilbertson, A. M.; Sadeghi, Hatef; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

    2015-12-01

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  10. Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

    PubMed

    Huang, Yuan; Sutter, Eli; Sadowski, Jerzy T; Cotlet, Mircea; Monti, Oliver L A; Racke, David A; Neupane, Mahesh R; Wickramaratne, Darshana; Lake, Roger K; Parkinson, Bruce A; Sutter, Peter

    2014-10-28

    Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on-off current ratios >10(6), as well as carrier mobilities up to 230 cm(2)/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.

  11. Growth and Characterization of III-V Semiconductors for Device Applications

    NASA Technical Reports Server (NTRS)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  12. Novel integration method for III–V semiconductor devices on silicon platform

    NASA Astrophysics Data System (ADS)

    Matsumoto, Keiichi; Kishikawa, Junya; Nishiyama, Tetsuo; Onuki, Yuya; Shimomura, Kazuhiko

    2016-11-01

    A novel integration method for III–V semiconductor devices on a Si platform was demonstrated. Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. A void-free 2-in. InP layer bonded on a Si substrate was realized, and a low interfacial resistance and ohmic contact through the bonded interface were observed. After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. Furthermore, almost no lattice strain was observed from the InP layer. Then, the epitaxial growth of a GaInAsP–InP double-hetero (DH) laser diode (LD) was demonstrated on the substrate and we observed lasing emission at RT in a pulse regime. These results are promising for the integration of InP-based devices on a Si platform for optical interconnection.

  13. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion.

  14. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2013-07-09

    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  15. Advances in device and formulation technologies for pulmonary drug delivery.

    PubMed

    Chan, John Gar Yan; Wong, Jennifer; Zhou, Qi Tony; Leung, Sharon Shui Yee; Chan, Hak-Kim

    2014-08-01

    Inhaled pharmaceuticals are formulated and delivered differently according to the therapeutic indication. However, specific device-formulation coupling is often fickle, and new medications or indications also demand new strategies. The discontinuation of chlorofluorocarbon propellants has seen replacement of older metered dose inhalers with dry powder inhaler formulations. High-dose dry powder inhalers are increasingly seen as an alternative dosage form for nebulised medications. In other cases, new medications have completely bypassed conventional inhalers and been formulated for use with unique inhalers such as the Staccato® device. Among these different devices, integration of software and electronic assistance has become a shared trend. This review covers recent device and formulation advances that are forming the current landscape of inhaled therapeutics. PMID:24728868

  16. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2008-05-20

    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  17. Are bioresorbable polylactate devices comparable to titanium devices for stabilizing Le Fort I advancement?

    PubMed

    Blakey, G H; Rossouw, E; Turvey, T A; Phillips, C; Proffit, W R; White, R P

    2014-04-01

    The purpose of this study was to evaluate whether skeletal and dental outcomes following Le Fort I surgery differed when stabilization was performed with polylactate bioresorbable devices or titanium devices. Fifty-seven patients with preoperative records and at least 1 year postoperative records were identified and grouped according to the stabilization method. All cephalometric X-rays were traced and digitized by a single operator. Analysis of covariance was used to compare the postsurgical change between the two stabilization methods. Twenty-seven patients received bioresorbable devices (group R), while 30 received titanium devices (group M). There were no statistically significant differences between the two groups with respect to gender, race/ethnicity, age, or dental and skeletal movements during surgery. Subtle postsurgical differences were noted, but were not statistically significant. Stabilization of Le Fort I advancement with polylactate bioresorbable and titanium devices produced similar clinical outcomes at 1 year following surgery.

  18. Advanced photon source experience with vacuum chambers for insertion devices

    SciTech Connect

    Hartog, P.D.; Grimmer, J.; Xu, S.; Trakhtenberg, E.; Wiemerslage, G.

    1997-08-01

    During the last five years, a new approach to the design and fabrication of extruded aluminum vacuum chambers for insertion devices was developed at the Advanced Photon Source (APS). With this approach, three different versions of the vacuum chamber, with vertical apertures of 12 mm, 8 mm, and 5 mm, were manufactured and tested. Twenty chambers were installed into the APS vacuum system. All have operated with beam, and 16 have been coupled with insertion devices. Two different vacuum chambers with vertical apertures of 16 mm and 11 mm were developed for the BESSY-II storage ring and 3 of 16 mm chambers were manufactured.

  19. Advanced Sensor Fish Device for ImprovedTurbine Design

    SciTech Connect

    Carlson, Thomas J.

    2009-09-14

    Juvenile salmon (smolts) passing through hydroelectric turbines are subjected to environmental conditions that can potentially kill or injure them. Many turbines are reaching the end of their operational life expectancies and will be replaced with new turbines that incorporate advanced “fish friendly” designs devised to prevent injury and death to fish. To design a fish friendly turbine, it is first necessary to define the current conditions fish encounter. One such device used by biologists at Pacific Northwest National Laboratory was the sensor fish device to collect data that measures the forces fish experience during passage through hydroelectric projects.

  20. Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

    NASA Astrophysics Data System (ADS)

    Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2016-08-01

    Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

  1. Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

    PubMed

    Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

    2015-07-22

    Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

  2. A globally convergent algorithm for the solution of the steady-state semiconductor device equations

    NASA Astrophysics Data System (ADS)

    Korman, Can E.; Mayergoyz, Isaak D.

    1990-08-01

    An iterative method for solving the discretized steady-state semiconductor device equations is presented. This method uses Gummel's block iteration technique to decouple the nonlinear Poisson and electron-hole current continuity equations. However, the main feature of this method is that it takes advantage of the diagonal nonlinearity of the discretized equations, and solves each equation iteratively by using the nonlinear Jacobi method. Using the fact that the diagonal nonlinearities are monotonically increasing functions, it is shown that this method has two important advantages. First, it has global convergence, i.e., convergence is guaranteed for any initial guess. Second, the solution of simultaneous algebraic equations is avoided by updating the value of the electrostatic and quasi-Fermi potentials at each mesh point by means of explicit formulae. This allows the implementation of this method on computers with small random access memories, such as personal computers, and also makes it very attractive to use on parallel processor machines. Furthermore, for serial computations, this method is generalized to the faster nonlinear successive overrelaxation method which has global convergence as well. The iterative solution of the nonlinear Poisson equation is formulated with energy- and position-dependent interface traps. It is shown that the iterative method is globally convergent for arbitrary distributions of interface traps. This is an important step in analyzing hot-electron effects in metal-oxide-silicon field-effect transistors (MOSFETs). Various numerical results on two- and three-dimensional MOSFET geometries are presented as well.

  3. Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction

    NASA Astrophysics Data System (ADS)

    Toda, Akio; Ikarashi, Nobuyuki; Ono, Haruhiko

    2000-03-01

    We examined the lattice strain distribution around local oxidation of silicon (LOCOS) in a semiconductor device by using highly accurate (1.8×10 -4 standard deviation) convergent-beam electron diffraction (CBED) at a nanometer-scale spatial resolution (10 nm in diameter). The nanometer-scale measurement was done by reducing the elastic relaxation using a thick (about 600 nm) sample and by removing the inelastically scattered electrons by means of an electron energy filter. A highly accurate measurement was achieved through the analysis of higher-order Laue zone (HOLZ) patterns using the least-squares fitting of HOLZ line intersection distances between the observations and calculations. Our examination showed that the LOCOS structure gave singularities in strain distributions at the field edge. That is, compressive strain exists in both the vertical and horizontal directions of the substrate, and the shear strain increased there. Most notably, two-dimensional measurements revealed that the singularity of the normal strain in the horizontal direction of the substrate generated at the field edge propagated into the substrate.

  4. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    DOE PAGES

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-30

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less

  5. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    SciTech Connect

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-30

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  6. Impact of carbon and nitrogen on gate dielectrics in metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Choi, Minseok; Lyons, John; Janotti, Anderson; van de Walle, Chris

    2013-03-01

    Al2O3 and HfO2 are used as alternative gate oxides in CMOS technology. Promising results have been achieved with Al2O3/III-V and HfO2/Si MOS structures, which exhibit relatively low densities of interface states. However, the presence of charge traps and fixed-charge centers near the oxide/semiconductor interface still poses serious limitations in device performance. Native point defects are usually proposed as an explanation; unintentional incorporation of impurities in the gate dielectric during the deposition process has so far received less attention. Using first-principles calculations based on hybrid functionals we investigate the effects of carbon and nitrogen impurities in Al2O3 and HfO2. By analyzing the position of the impurity levels with respect to the III-V and Si band edges, we determine if these impurities can act as charge traps or sources of fixed charge. Our results show that carbon can act as a charge trap and lead to leakage current through the gate dielectric. Nitrogen can act as a source of negative fixed charge, but may be effective in alleviating the problem of charge traps and fixed charges associated with Al, Hf, and O vacancies. This work was supported by the ONR DEFINE MURI program.

  7. Enabling Earth-Abundant Pyrite (FeS2) Semiconductor Nanostructures for High Performance Photovoltaic Devices

    SciTech Connect

    Jin, Song

    2014-11-18

    This project seeks to develop nanostructures of iron pyrite, an earth-abundant semiconductor, to enable their applications in high-performance photovoltaic (PV) devices. Growth of high purity iron pyrite nanostructures (nanowires, nanorods, and nanoplates), as well as iron pyrite thin films and single crystals, has been developed and their structures characterized. These structures have been fundamentally investigated to understand the origin of the low solar energy conversion efficiency of iron pyrite and various passivation strategies and doping approaches have been explored in order to improve it. By taking advantage of the high surface-to-bulk ratio in nanostructures and effective electrolyte gating, we fully characterized both the surface inversion and bulk electrical transport properties for the first time through electrolyte-gated Hall measurements of pyrite nanoplate devices and show that pyrite is n-type in the bulk and p-type near the surface due to strong inversion, which has important consequences to using nanocrystalline pyrite for efficient solar energy conversion. Furthermore, through a comprehensive investigation on n-type iron pyrite single crystals, we found the ionization of high-density bulk deep donor states, likely resulting from bulk sulfur vacancies, creates a non-constant charge distribution and a very narrow surface space charge region that limits the total barrier height, thus satisfactorily explains the limited photovoltage and poor photoconversion efficiency of iron pyrite single crystals. These findings suggest new ideas on how to improve single crystal pyrite and nanocrystalline or polycrystalline pyrite films to enable them for high performance solar applications.

  8. The way to zeros: The future of semiconductor device and chemical mechanical polishing technologies

    NASA Astrophysics Data System (ADS)

    Tsujimura, Manabu

    2016-06-01

    For the last 60 years, the development of cutting-edge semiconductor devices has strongly emphasized scaling; the effort to scale down current CMOS devices may well achieve the target of 5 nm nodes by 2020. Planarization by chemical mechanical polishing (CMP), is one technology essential for supporting scaling. This paper summarizes the history of CMP transitions in the planarization process as well as the changing degree of planarity required, and, finally, introduces innovative technologies to meet the requirements. The use of CMP was triggered by the replacement of local oxidation of silicon (LOCOS) as the element isolation technology by shallow trench isolation (STI) in the 1980s. Then, CMP’s use expanded to improving embedability of aluminum wiring, tungsten (W) contacts, Cu wiring, and, more recently, to its adoption in high-k metal gate (HKMG) and FinFET (FF) processes. Initially, the required degree of planarity was 50 nm, but now 0 nm is required. Further, zero defects on a post-CMP wafer is now the goal, and it is possible that zero psi CMP loading pressure will be required going forward. Soon, it seems, everything will have to be “zero” and perfect. Although the process is also chemical in nature, the CMP process is actually mechanical with a load added using slurry particles several tens of nm in diameter. Zero load in the loading process, zero nm planarity with no trace of processing, and zero residual foreign material, including the very slurry particles used in the process, are all required. This article will provide an overview of how to achieve these new requirements and what technologies should be employed.

  9. Nanoscale-driven crystal growth of hexaferrite heterostructures for magnetoelectric tuning of microwave semiconductor integrated devices.

    PubMed

    Hu, Bolin; Chen, Zhaohui; Su, Zhijuan; Wang, Xian; Daigle, Andrew; Andalib, Parisa; Wolf, Jason; McHenry, Michael E; Chen, Yajie; Harris, Vincent G

    2014-11-25

    A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25-40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the crystal growth technique is considered theoretically and experimentally to be universal and suitable for the growth of a wide range of diverse crystals. In the present experiment, the conical spin structure of Co2Y ferrite crystals was found to give rise to an intrinsic magnetoelectric effect. Our experiment reveals a remarkable increase in the conical phase transition temperature by ∼150 K for Co2Y ferrite, compared to 5-10 K of Zn2Y ferrites recently reported. The high quality Co2Y ferrite crystals, having low microwave loss and magnetoelectricity, were successfully grown on a wide bandgap semiconductor GaN. The demonstration of the nanostructure materials-based "system on a wafer" architecture is a critical milestone to next generation microwave integrated systems. It is also practical that future microwave integrated systems and their magnetic performances could be tuned by an electric field because of the magnetoelectricity of hexaferrites.

  10. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted.

  11. Insertion devices for the Advanced Light Source at LBL

    SciTech Connect

    Hassenzahl, W.; Chin, J.; Halbach, K.; Hoyer, E.; Humphries, D.; Kincaid, B.; Savoy, R.

    1989-03-01

    The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory will be the first of the new generation of dedicated synchrotron light sources to be put into operation. Specially designed insertion devices will be required to realize the high brightness photon beams made possible by the low emittance of the electron beam. The complement of insertion devices on the ALS will include undulators with periods as short as 3.9 cm and one or more high field wigglers. The first device to be designed is a 5 m long, 5 cm period, hybrid undulator. The goal of very high brightness and high harmonic output imposes unusually tight tolerances on the magnetic field quality and thus on the mechanical structure. The design process, using a generic structure for all undulators, is described. 5 refs., 4 figs., 1 tab.

  12. PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

    NASA Astrophysics Data System (ADS)

    Nötzel, Richard

    2009-07-01

    This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

  13. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    NASA Technical Reports Server (NTRS)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  14. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus.

  15. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  16. VME insertion device control at the Advanced Photon Source

    NASA Astrophysics Data System (ADS)

    Smith, M.; Ramanathan, M.; Grimmer, J.; Merritt, M.

    2002-03-01

    The Advanced Photon Source (APS) currently has 29 insertion devices (IDs) installed and operating. The need to remotely diagnose and correct problems has become increasingly important. This has been accomplished through the development of a new control system with greatly enhanced input/output (I/O) capabilities specifically targeted to this control task. The system features a custom VME control card and three rack-mounted interface chassis for ID control, encoder interface, and motor drive shutdown. The card provides device interlocks, limit switch logic, motor axis selection, digital I/O, and status feedback. This VME insertion device control was designed to operate with an eight-axis intelligent motor controller and a stepper-motor drive that accepts step and direction inputs. The front panel of the card has two connectors for all of the control signals for the stepper-motor drives. There is a third connector for the ID limit switch inputs and the emergency stop circuit, and a fourth connector provides 23 bits of digital outputs and 16 bits of digital inputs. Light-emitting diodes indicate which motions are inhibited by the limit switch logic. An experimental physics industrial control system (EPICS) (http://www.APS.ANL-GOV/EPICS) device driver was developed to access all the registers on the VME control card. Using standard EPICS records, the insertion device status can be viewed remotely. This minimizes downtime for APS ID beamline users by allowing faster resolution of any problems preventing a user from operating the insertion device. This new insertion device control has been in use at the APS since July of 1999. The design features of the control system and rationale for them will be presented, along with our experience in building, testing, installing, and operating the control system.

  17. Semiconductor devices: solar cells. January 1975-May 1981 (citations from the International Information Service for the Physics and Engineering Communities Data Base). Report for Jan 75-May 81

    SciTech Connect

    Not Available

    1981-05-01

    The applications of semiconductor devices to solar cells and arrays are presented. Emphasis is placed on manufacturing processes, cell design, and performance. (Contains 235 citations fully indexed and including a title list.)

  18. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kesheng, Wang; Jia, Cheng; Yin, Zhong; Linhong, Ji

    2016-04-01

    Electrostatic chucks are one of the core components of semiconductor devices. As a key index of electrostatic chucks, the clamping force must be controlled within a reasonable range. Therefore, it is essential to accurately measure the clamping force. To reduce the negative factors influencing measurement precision and repeatability, this article presents a novel method to measure the clamping force and we elaborate both the principle and the key procedure. A micro-force probe component is introduced to monitor, adjust, and eliminate the gap between the wafer and the electrostatic chuck. The contact force between the ruby probe and the wafer is selected as an important parameter to characterize de-chucking, and we have found that the moment of de-chucking can be exactly judged. Moreover, this article derives the formula calibrating equivalent action area of backside gas pressure under real working conditions, which can effectively connect the backside gas pressure at the moment of de-chucking and the clamping force. The experiments were then performed on a self-designed measuring platform. The de-chucking mechanism is discussed in light of our analysis of the experimental data. Determination criteria for de-chucking point are summed up. It is found that the relationship between de-chucking pressure and applied voltage conforms well to quadratic equation. Meanwhile, the result reveals that actual de-chucking behavior is much more complicated than the description given in the classical empirical formula. Project supported by No. 02 National Science and Technology Major Project of China (No. 2011ZX02403-004).

  19. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  20. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

    SciTech Connect

    Wang, Lijuan Song, Xiaofeng; Liu, Xin; Zhang, Long; Li, Yiping; Yan, Donghang

    2013-12-09

    We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

  1. Silicon and germanium crystallization techniques for advanced device applications

    NASA Astrophysics Data System (ADS)

    Liu, Yaocheng

    Three-dimensional architectures are believed to be one of the possible approaches to reduce interconnect delay in integrated circuits. Metal-induced crystallization (MIC) can produce reasonably high-quality Si crystals with low-temperature processing, enabling the monolithic integration of multilevel devices and circuits. A two-step MIC process was developed to make single-crystal Si pillars on insulator by forming a single-grain NiSi2 template in the first step and crystallizing the amorphous Si by NiSi2-mediated solid-phase epitaxy (SPE) in the second step. A transmission electron microscopy study clearly showed the quality improvement over the traditional MIC process. Another crystallization technique developed is rapid melt growth (RMG) for the fabrication of Ge crystals and Ge-on-insulator (GeOI) substrates. Ge is an important semiconductor with high carrier mobility and excellent optoelectronic properties. GeOI substrates are particularly desired to achieve high device performances and to solve the process problems traditionally associated with bulk Ge wafers. High-quality Ge crystals and GeOI structures were grown on Si substrates using the novel rapid melt growth technique that integrates the key elements in Czochralski growth---seeding, melting, epitaxy and defect necking. Growth velocity and nucleation rate were calculated to determine the RMG process window. Self-aligned microcrucibles were created to hold the Ge liquid during the RMG annealing. Material characterization showed a very low defect density in the RMG GeOI structures. The Ge films are relaxed, with their orientations controlled by the Si substrates. P-channel MOSFETs and p-i-n photodetectors were fabricated with the GeOI substrates. The device properties are comparable to those obtained with bulk Ge wafers, indicating that the RMG GeOI substrates are well suited for device fabrication. A new theory, growth-induced barrier lowering (GIBL), is proposed to understand the defect generation in

  2. Advanced Measurement Devices for the Microgravity Electromagnetic Levitation Facility EML

    NASA Technical Reports Server (NTRS)

    Brillo, Jurgen; Fritze, Holger; Lohofer, Georg; Schulz, Michal; Stenzel, Christian

    2012-01-01

    This paper reports on two advanced measurement devices for the microgravity electromagnetic levitation facility (EML), which is currently under construction for the use onboard the "International Space Station (ISS)": the "Sample Coupling Electronics (SCE)" and the "Oxygen Sensing and Control Unit (OSC)". The SCE measures by a contactless, inductive method the electrical resistivity and the diameter of a spherical levitated metallic droplet by evaluating the voltage and electrical current applied to the levitation coil. The necessity of the OSC comes from the insight that properties like surface tension or, eventually, viscosity cannot seriously be determined by the oscillating drop method in the EML facility without knowing the conditions of the surrounding atmosphere. In the following both measurement devices are explained and laboratory test results are presented.

  3. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  4. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  5. Complex-envelope alternating-direction-implicit FDTD method for simulating active photonic devices with semiconductor/solid-state media.

    PubMed

    Singh, Gurpreet; Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2012-06-15

    A complex-envelope (CE) alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) approach to treat light-matter interaction self-consistently with electromagnetic field evolution for efficient simulations of active photonic devices is presented for the first time (to our best knowledge). The active medium (AM) is modeled using an efficient multilevel system of carrier rate equations to yield the correct carrier distributions, suitable for modeling semiconductor/solid-state media accurately. To include the AM in the CE-ADI-FDTD method, a first-order differential system involving CE fields in the AM is first set up. The system matrix that includes AM parameters is then split into two time-dependent submatrices that are then used in an efficient ADI splitting formula. The proposed CE-ADI-FDTD approach with AM takes 22% of the time as the approach of the corresponding explicit FDTD, as validated by semiconductor microdisk laser simulations.

  6. Intravital fluorescence imaging of mouse brain using implantable semiconductor devices and epi-illumination of biological tissue

    PubMed Central

    Takehara, Hiroaki; Ohta, Yasumi; Motoyama, Mayumi; Haruta, Makito; Nagasaki, Mizuki; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2015-01-01

    The application of the fluorescence imaging method to living animals, together with the use of genetically engineered animals and synthesized photo-responsive compounds, is a powerful method for investigating brain functions. Here, we report a fluorescence imaging method for the brain surface and deep brain tissue that uses compact and mass-producible semiconductor imaging devices based on complementary metal-oxide semiconductor (CMOS) technology. An image sensor chip was designed to be inserted into brain tissue, and its size was 1500 × 450 μm. Sample illumination is also a key issue for intravital fluorescence imaging. Hence, for the uniform illumination of the imaging area, we propose a new method involving the epi-illumination of living biological tissues, and we performed investigations using optical simulations and experimental evaluation. PMID:26137364

  7. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  8. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann

    2016-04-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  9. Microchamber Device Equipped with Complementary Metal Oxide Semiconductor Optical Polarization Analyzer Chip for Micro Total Analysis System

    NASA Astrophysics Data System (ADS)

    Minakawa, Kyosuke; Yamada, Hirofumi; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2009-04-01

    We fabricated a device equipped with a microchannel on a complementary metal oxide semiconductor (CMOS) sensor to observe the optical polarization rotation angle during in situ monitoring. The sensor is based on the integrated wire-grid polarization detection method. The microchannel is fabricated on a Si layer by deep reactive ion etching (DRIE). Using this device, we measured the optical rotation of chiral molecules in a microfluid. This showed that the device is applicable to in situ chiral measurement. Optical rotation angles of the linearly polarized light corresponded to different concentrations of sucrose solution. Sensor output reflecting the temporal concentration change of chiral molecules was also observed. These results clearly demonstrate that the CMOS sensor has the capability of measuring chiral molecules in situ.

  10. Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with 4He + ions

    NASA Astrophysics Data System (ADS)

    Tin, C. C.; Barnes, P. A.; Williams, J. R.; Patuwathavithane, C. S.; Van Staagen, P. K.

    1989-11-01

    Capacitance-voltage (C-V) measurements have been made on n-InP metal-oxide-semiconductor (MOS) devices damaged by 2-MeV 4 He+ ion bombardment. The C-V curves for samples with thin oxide layer (˜100 Å) show the presence of a depletion layer during both forward and reverse bias. This behavior is significantly different from those of normal, undamaged MOS devices. Measurements made on n-InP MOS samples with different oxide thicknesses show that the C-V curves gradually approach that of a MOS device on a p-type substrate. The anomalous behavior of the C-V curves for the irradiated samples can be explained by the presence of an n-p-n structure under the oxide layer.

  11. Advanced Silicon Solar Cell Device Physics and Design

    NASA Astrophysics Data System (ADS)

    Deceglie, Michael Gardner

    A fundamental challenge in the development and deployment of solar photovoltaic technology is a reduction in cost enabling direct competition with fossil-fuel-based energy sources. A key driver in this cost reduction is optimized device efficiency, because increased energy output leverages all photovoltaic system costs, from raw materials and module manufacturing to installation and maintenance. To continue progress toward higher conversion efficiencies, solar cells are being fabricated with increasingly complex designs, including engineered nanostructures, heterojunctions, and novel contacting and passivation schemes. Such advanced designs require a comprehensive and unified understanding of the optical and electrical device physics at the microscopic scale. This thesis focuses on a microscopic understanding of solar cell optoelectronic performance and its impact on cell optimization. We consider this in three solar cell platforms: thin-film crystalline silicon, amorphous/crystalline silicon heterojunctions, and thin-film cells with nanophotonic light trapping. The work described in this thesis represents a powerful design paradigm, based on a detailed physical understanding of the mechanisms governing solar cell performance. Furthermore, we demonstrate the importance of understanding not just the individual mechanisms, but also their interactions. Such an approach to device optimization is critical for the efficiency and competitiveness of future generations of solar cells.

  12. Silicon high speed modulator for advanced modulation: device structures and exemplary modulator performance

    NASA Astrophysics Data System (ADS)

    Milivojevic, Biljana; Wiese, Stefan; Whiteaway, James; Raabe, Christian; Shastri, Anujit; Webster, Mark; Metz, Peter; Sunder, Sanjay; Chattin, Bill; Anderson, Sean P.; Dama, Bipin; Shastri, Kal

    2014-03-01

    Fiber optics is well established today due to the high capacity and speed, unrivaled flexibility and quality of service. However, state of the art optical elements and components are hardly scalable in terms of cost and size required to achieve competitive port density and cost per bit. Next-generation high-speed coherent optical communication systems targeting a data rate of 100-Gb/s and beyond goes along with innovations in component and subsystem areas. Consequently, by leveraging the advanced silicon micro and nano-fabrication technologies, significant progress in developing CMOS platform-based silicon photonic devices has been made all over the world. These achievements include the demonstration of high-speed IQ modulators, which are important building blocks in coherent optical communication systems. In this paper, we demonstrate silicon photonic QPSK modulator based on a metal-oxide-semiconductor (MOS) capacitor structure, address different modulator configuration structures and report our progress and research associated with highspeed advanced optical modulation in silicon photonics

  13. Group III nitride semiconductors for short wavelength light-emitting devices

    NASA Astrophysics Data System (ADS)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  14. Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

    NASA Astrophysics Data System (ADS)

    Cho, Minkyu; Seo, Jung-Hun; Park, Dong-Wook; Zhou, Weidong; Ma, Zhenqiang

    2016-06-01

    Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM-SiO2 configuration shows the best interface charge behavior, while Ge NM-Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.

  15. Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

    NASA Astrophysics Data System (ADS)

    Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

    MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

  16. Influence of material quality and process-induced defects on semiconductor device performance and yield

    NASA Technical Reports Server (NTRS)

    Porter, W. A.; Mckee, W. R.

    1974-01-01

    An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

  17. Final LDRD report : design and fabrication of advanced device structures for ultra high efficiency solid state lighting.

    SciTech Connect

    Koleske, Daniel David; Bogart, Katherine Huderle Andersen; Shul, Randy John; Wendt, Joel Robert; Crawford, Mary Hagerott; Allerman, Andrew Alan; Fischer, Arthur Joseph

    2005-04-01

    The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.

  18. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes.

    PubMed

    Alivov, Yahya; Funke, Hans; Nagpal, Prashant

    2015-07-24

    Rapid miniaturization of electronic devices down to the nanoscale, according to Moore's law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-10(6). While demonstrated air- and chemical-gating speeds were slow here (∼seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for 'chemical transistors', 'chemical diodes', and very high-efficiency sensing applications.

  19. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

    NASA Astrophysics Data System (ADS)

    Alivov, Yahya; Funke, Hans; Nagpal, Prashant

    2015-07-01

    Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

  20. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G.; Evans, Paul G.; Ritz, Clark S.

    2015-11-17

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  1. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G.; Evans, Paul G.; Ritz, Clark S.

    2011-02-15

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  2. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G; Evans, Paul G; Ritz, Clark S

    2013-09-17

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  3. Compound semiconductor native oxide-based technologies for optical and electrical devices grown on gallium arsenide substrates using MOCVD

    NASA Astrophysics Data System (ADS)

    Holmes, Adrian Lawrence

    1999-11-01

    The beginning of the modern microelectronics industry can be traced back to an invention made in 1947 when Bardeen and Brattain created the first semiconductor switch, called a transistor. Several other important discoveries followed; however, two of the more significant were (i) the development of the first planar process using silicon dioxide (SiO2) as a mask for diffusions into silicon by Frosch in 1955, and (ii) the subsequent integration of several transistors in tiny circuits by Kilby in 1958. Due to the superior quality of the SiO2-silicon interface, Si-based metal-oxide-semiconductor (MOS) transistors have primarily been used in integrated circuits. Until recently, compound semiconductors did not have a native oxide of sufficient quality to create similar MOS transistors. In 1990, research performed by Professor Holonyak and his group at the University of Illinois at Urbana-Champaign has led to a high-quality, stable, and insulating native oxide created from aluminum-containing compound semiconductor alloys. This study investigates native oxide films that are formed by the thermal oxidation of AlAs and InAlP epitaxial layers grown lattice-matched on GaAs substrates using metalorganic chemical vapor deposition (MOCVD). The primary goal is to evaluate how these native oxides can help form novel device structures and transistors. To qualify the material properties of these native oxide films, we have used several characterization techniques including photoluminescence, cross-sectional scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). Additionally, we have performed leakage current and capacitance-voltage measurements to evaluate the electrical characteristics of the native oxide-semiconductor interface. The kinetics of the thermal oxidation process for both the surface oxidation of InAlP and lateral oxidation of AlAs are studied and contrasted. Aided by this knowledge, we have created a sealed

  4. Factors Associated With Electronic Cigarette Users’ Device Preferences and Transition From First Generation to Advanced Generation Devices

    PubMed Central

    Veldheer, Susan; Hrabovsky, Shari; Nichols, Travis T.; Wilson, Stephen J.; Foulds, Jonathan

    2015-01-01

    Introduction: Electronic cigarettes (e-cigs) are becoming increasingly popular but little is known about how e-cig users’ transition between the different device types and what device characteristics and preferences may influence the transition. Methods: Four thousand four hundred twenty-one experienced e-cig users completed an online survey about their e-cig use, devices, and preferences. Participants included in analysis were ever cigarette smokers who used an e-cig at least 30 days in their lifetime and who reported the type of their first and current e-cig device and the nicotine concentration of their liquid. Analyses focused on transitions between “first generation” devices (same size as a cigarette with no button) and “advanced generation” devices (larger than a cigarette with a manual button) and differences between current users of each device type. Results: Most e-cig users (n = 2603, 58.9%) began use with a first generation device, and of these users, 63.7% subsequently transitioned to current use of an advanced generation device. Among users who began use with an advanced generation device (n = 1818, 41.1%), only 5.7% transitioned to a first generation device. Seventy-seven percent of current advanced generation e-cig users switched to their current device in order to obtain a “more satisfying hit.” Battery capabilities and liquid flavor choices also influenced device choice. Conclusion: E-cig users commonly begin use with a device shaped like a cigarette and transition to a larger device with a more powerful battery, a button for manual activation and a wider choice of liquid flavors. PMID:25744966

  5. Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

    NASA Technical Reports Server (NTRS)

    Patterson, Richard; Hammoud, Ahmad; Dones, Keishla R.

    2009-01-01

    Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

  6. A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

    NASA Astrophysics Data System (ADS)

    Bisoyi, Sibani; Rödel, Reinhold; Zschieschang, Ute; Kang, Myeong Jin; Takimiya, Kazuo; Klauk, Hagen; Tiwari, Shree Prakash

    2016-02-01

    A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.

  7. SEMICONDUCTOR DEVICES: Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

    NASA Astrophysics Data System (ADS)

    Jiate, Zhao; Yong, Zhao; Wanjun, Wang; Yinlei, Hao; Qiang, Zhou; Jianyi, Yang; Minghua, Wang; Xiaoqing, Jiang

    2010-06-01

    The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

  8. Performance of an MPI-only semiconductor device simulator on a quad socket/quad core InfiniBand platform.

    SciTech Connect

    Shadid, John Nicolas; Lin, Paul Tinphone

    2009-01-01

    This preliminary study considers the scaling and performance of a finite element (FE) semiconductor device simulator on a capacity cluster with 272 compute nodes based on a homogeneous multicore node architecture utilizing 16 cores. The inter-node communication backbone for this Tri-Lab Linux Capacity Cluster (TLCC) machine is comprised of an InfiniBand interconnect. The nonuniform memory access (NUMA) nodes consist of 2.2 GHz quad socket/quad core AMD Opteron processors. The performance results for this study are obtained with a FE semiconductor device simulation code (Charon) that is based on a fully-coupled Newton-Krylov solver with domain decomposition and multilevel preconditioners. Scaling and multicore performance results are presented for large-scale problems of 100+ million unknowns on up to 4096 cores. A parallel scaling comparison is also presented with the Cray XT3/4 Red Storm capability platform. The results indicate that an MPI-only programming model for utilizing the multicore nodes is reasonably efficient on all 16 cores per compute node. However, the results also indicated that the multilevel preconditioner, which is critical for large-scale capability type simulations, scales better on the Red Storm machine than the TLCC machine.

  9. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  10. Advanced materials and concepts for energy storage devices

    NASA Astrophysics Data System (ADS)

    Teng, Shiang Jen

    Over the last decade, technological progress and advances in the miniaturization of electronic devices have increased demands for light-weight, high-efficiency, and carbon-free energy storage devices. These energy storage devices are expected to play important roles in automobiles, the military, power plants, and consumer electronics. Two main types of electrical energy storage systems studied in this research are Li ion batteries and supercapacitors. Several promising solid state electrolytes and supercapacitor electrode materials are investigated in this research. The first section of this dissertation is focused on the novel results on pulsed laser annealing of Li7La3Zr2O12 (LLZO). LLZO powders with a tetragonal structure were prepared by a sol-gel technique, then a pulsed laser annealing process was employed to convert the tetragonal powders to cubic LLZO without any loss of lithium. The second section of the dissertation reports on how Li5La 3Nb2O12 (LLNO) was successfully synthesized via a novel molten salt synthesis (MSS) method at the relatively low temperature of 900°C. The low sintering temperature prevented the loss of lithium that commonly occurs during synthesis using conventional solid state or wet chemical reactions. The second type of energy storage device studied is supercapacitors. Currently, research on supercapacitors is focused on increasing their energy densities and lowering their overall production costs by finding suitable electrode materials. The third section of this dissertation details how carbonized woods electrodes were used as supercapacitor electrode materials. A high energy density of 45.6 Wh/kg and a high power density of 2000 W/kg were obtained from the supercapacitor made from carbonized wood electrodes. The high performance of the supercapacitor was discovered to originate from the hierarchical porous structures of the carbonized wood. Finally, the fourth section of this dissertation is on the electrochemical effects of

  11. Methods of producing strain in a semiconductor waveguide and related devices

    DOEpatents

    Cox, Johathan Albert; Rakich, Peter Thomas

    2016-02-16

    Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated "X.sup.2"), while the second sections have a low X.sup.2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X.sup.2 properties when formed on a particular substrate, and/or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.

  12. The 1.7 kilogram microchip: energy and material use in the production of semiconductor devices.

    PubMed

    Williams, Eric D; Ayres, Robert U; Heller, Miriam

    2002-12-15

    The scale of environmental impacts associated with the manufacture of microchips is characterized through analysis of material and energy inputs into processes in the production chain. The total weight of secondary fossil fuel and chemical inputs to produce and use a single 2-gram 32MB DRAM chip are estimated at 1600 g and 72 g, respectively. Use of water and elemental gases (mainly N2) in the fabrication stage are 32,000 and 700 g per chip, respectively. The production chain yielding silicon wafers from quartz uses 160 times the energy required for typical silicon, indicating that purification to semiconductor grade materials is energy intensive. Due to its extremely low-entropy, organized structure, the materials intensity of a microchip is orders of magnitude higher than that of "traditional" goods. Future analysis of semiconductor and other low entropy high-tech goods needs to include the use of secondary materials, especially for purification.

  13. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  14. 76 FR 48169 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-08

    ... Microbiology/ Medical Countermeasure Devices; Public Meeting AGENCY: Food and Drug Administration, HHS. ACTION... following public meeting: ``Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical... multiplexed microbiology/medical countermeasure (MCM) devices, their clinical application and public...

  15. Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells

    NASA Astrophysics Data System (ADS)

    Minemoto, Takashi; Murata, Masashi

    2014-08-01

    Device modeling of CH3NH3PbI3-xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefore, applied one-dimensional device simulator widely used in the Cu(In,Ga)Se2 solar cells. A high open-circuit voltage of 1.0 V reported experimentally was successfully reproduced in the simulation, and also other solar cell parameters well consistent with real devices were obtained. In addition, the effect of carrier diffusion length of the absorber and interface defect densities at front and back sides and the optimum thickness of the absorber were analyzed. The results revealed that the diffusion length experimentally reported is long enough for high efficiency, and the defect density at the front interface is critical for high efficiency. Also, the optimum absorber thickness well consistent with the thickness range of real devices was derived.

  16. Two-dimensional device modeling and analysis of GaInAs metal-semiconductor-metal photodiode structures

    NASA Astrophysics Data System (ADS)

    Averin, S.; Sachot, R.; Hugi, J.; de Fays, M.; Ilegems, M.

    1996-08-01

    A two-dimensional self-consistent time-dependent simulation technique has been developed to investigate electron-hole transport processes in the active region of metal-semiconductor-metal (MSM) interdigitated photodiode structures and to analyze their high-speed response. The distribution of the electric field inside the MSM device is determined by numerically solving the two-dimensional Poisson's equation by the modified fast elliptic solver method. A set of superparticles photogenerated at a particular wavelength is analyzed with a given initial distribution of the potential and given boundary conditions, and the evolution of the particles is traced in time through the active region of the MSM device. Circuit loading, electric field effects in the MSM structure with various finger separations, background doping, carrier trapping, and recombination are included in the simulation program. Owing to miniaturization of devices, the classical scaling laws lose their validity while various performance degrading effects appear. The simulations show that the main problem in MSM devices with a small contact separation is the low electric field penetration depth. This results in different electron and hole collection rates and in a poor response time. The trade-off between the high-speed response and the internal quantum efficiency is examined and ways to improve the high-speed response are indicated. Modeling results are compared with experimental data on Ga0.47In0.53As based MSM photodiodes.

  17. High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

    SciTech Connect

    Baumann, Frieder H.

    2014-06-30

    A classical method used to characterize the strain in modern semiconductor devices is nanobeam diffraction (NBD) in the transmission electron microscope. One challenge for this method lies in the fact that the smaller the beam becomes, the more difficult it becomes to analyze the resulting diffraction spot pattern. We show that a carefully designed fitting algorithm enables us to reduce the sampling area for the diffraction patterns on the camera chip dramatically (∼1/16) compared to traditional settings without significant loss of precision. The resulting lower magnification of the spot pattern permits the presence of an annular dark field detector, which in turn makes the recording of images for drift correction during NBD acquisition possible. Thus, the reduced sampling size allows acquisition of drift corrected NBD 2D strain maps of up to 3000 pixels while maintaining a precision of better than 0.07%. As an example, we show NBD strain maps of a modern field effect transistor (FET) device. A special filtering feature used in the analysis makes it is possible to measure strain in silicon devices even in the presence of other crystalline materials covering the probed area, which is important for the characterization of the next generation of devices (Fin-FETs).

  18. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  19. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

    SciTech Connect

    Robertson, J.; Guo, Y.; Lin, L.

    2015-03-21

    The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.

  20. Radiation doses to insertion devices at the advanced photon source

    SciTech Connect

    Moog, E. R.; Den Hartog, P. K.; Semones, E. J.; Job, P. K.

    1997-07-01

    Dose measurements made on and around the insertion devices (IDs) at the Advanced Photon Source are reported. Attempts are made to compare these dose rates to dose rates that have been reported to cause radiation-induced demagnetization, but comparisons are complicated by such factors as the particular magnet material and the techniques used in its manufacture, the spectrum and type of radiation, and the demagnetizing field seen by the magnet. The spectrum of radiation at the IDs has been measured and found to include a large high-energy (7 GeV) component, at least during some runs. Lead shielding installed immediately upstream of the IDs has been found to decrease the dose to the upstream ends of the IDs. It has almost no effect on the dose to the downstream ends of the IDs, however, since much of the radiation travels through the ID vacuum chamber and cannot be readily shielded. Opening the gaps of the IDs during injection and at other times also helps decrease the radiation exposure.

  1. Radiation doses to insertion devices at the advanced photon source

    SciTech Connect

    Moog, E.R.; Den Hartog, P.K.; Semones, E.J.; Job, P.K.

    1997-07-01

    Dose measurements made on and around the insertion devices (IDs) at the Advanced Photon Source are reported. Attempts are made to compare these dose rates to dose rates that have been reported to cause radiation-induced demagnetization, but comparisons are complicated by such factors as the particular magnet material and the techniques used in its manufacture, the spectrum and type of radiation, and the demagnetizing field seen by the magnet. The spectrum of radiation at the IDs has been measured and found to include a large high-energy (7 GeV) component, at least during some runs. Lead shielding installed immediately upstream of the IDs has been found to decrease the dose to the upstream ends of the IDs. It has almost no effect on the dose to the downstream ends of the IDs, however, since much of the radiation travels through the ID vacuum chamber and cannot be readily shielded. Opening the gaps of the IDs during injection and at other times also helps decrease the radiation exposure. {copyright} {ital 1997 American Institute of Physics.}

  2. Design of advanced ultrasonic transducers for welding devices.

    PubMed

    Parrini, L

    2001-11-01

    A new high frequency ultrasonic transducer has been conceived, designed, prototyped, and tested. In the design phase, an advanced approach was used and established. The method is based on an initial design estimate obtained with finite element method (FEM) simulations. The simulated ultrasonic transducers and resonators are then built and characterized experimentally through laser interferometry and electrical resonance spectra. The comparison of simulation results with experimental data allows the parameters of FEM models to be adjusted and optimized. The achieved FEM simulations exhibit a remarkably high predictive potential and allow full control of the vibration behavior of the transducer. The new transducer is mounted on a wire bonder with a flange whose special geometry was calculated by means of FEM simulations. This flange allows the transducer to be attached on the wire bonder, not only in longitudinal nodes, but also in radial nodes of the ultrasonic field excited in the horn. This leads to a total decoupling of the transducer to the wire bonder, which has not been achieved so far. The new approach to mount ultrasonic transducers on a welding device is of major importance, not only for wire bonding, but also for all high power ultrasound applications and has been patented.

  3. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Mekhiche, Mike; Dufera, Hiz; Montagna, Deb

    2012-10-29

    The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressed cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.

  4. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    NASA Astrophysics Data System (ADS)

    Oulachgar, El Hassane

    As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

  5. SEMICONDUCTOR DEVICES Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures

    NASA Astrophysics Data System (ADS)

    Yanhu, Chen; Huajun, Shen; Xinyu, Liu; Hui, Xu; Ling, Li; Huijun, Li

    2010-10-01

    The thermal and electro stability of multi-finger heterojunction bipolar transistors (HBTs) with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-IV test and thermal resistance calculation. Their electro stability was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.

  6. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    SciTech Connect

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  7. Organic Semiconductors and its Applications

    NASA Astrophysics Data System (ADS)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  8. SEMICONDUCTOR DEVICES: An improved HCI degradation model for a VLSI MOSFET

    NASA Astrophysics Data System (ADS)

    Yi, Tang; Xinggong, Wan; Xiang, Gu; Wenyuan, Wang; Huirui, Zhang; Yuwei, Liu

    2009-12-01

    An improved hot carrier injection (HCI) degradation model was proposed based on interface trap generation and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as Idlin, Idsat, Gm and Vt fitted well with this model. Devices were prepared with 0.35 μm technology and different LDD processes. Idlin and Idsat after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers.

  9. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  10. A bio-inspired memory device based on interfacing Physarum polycephalum with an organic semiconductor

    SciTech Connect

    Romeo, Agostino; Dimonte, Alice; Tarabella, Giuseppe; D’Angelo, Pasquale E-mail: iannotta@imem.cnr.it; Erokhin, Victor; Iannotta, Salvatore E-mail: iannotta@imem.cnr.it

    2015-01-01

    The development of devices able to detect and record ion fluxes is a crucial point in order to understand the mechanisms that regulate communication and life of organisms. Here, we take advantage of the combined electronic and ionic conduction properties of a conducting polymer to develop a hybrid organic/living device with a three-terminal configuration, using the Physarum polycephalum Cell (PPC) slime mould as a living bio-electrolyte. An over-oxidation process induces a conductivity switch in the polymer, due to the ionic flux taking place at the PPC/polymer interface. This behaviour endows a current-depending memory effect to the device.

  11. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  12. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.

  13. Irradiate-anneal screening of total dose effects in semiconductor devices. [radiation hardening of spacecraft components of Mariner spacecraft

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Price, W. E.

    1976-01-01

    An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

  14. Multimodal Complementary Metal-Oxide-Semiconductor Sensor Device for Imaging of Fluorescence and Electrical Potential in Deep Brain of Mouse

    NASA Astrophysics Data System (ADS)

    Tagawa, Ayato; Minami, Hiroki; Mitani, Masahiro; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Tamura, Hideki; Hatanaka, Yumiko; Ishikawa, Yasuyuki; Shiosaka, Sadao; Ohta, Jun

    2010-01-01

    We have developed a multimodal complementary metal-oxide-semiconductor (CMOS) sensor device for observing neural activities in the deep brain of a mouse. The CMOS sensor includes an image sensor, electrodes, and a light-emitting diode (LED). The image sensor was designed to be operated using only four inputs/outputs (I/Os) to reduce the number of connecting wires. The electrodes were placed on the pixel array of the sensor. Windows were opened in the electrode over the photodiodes to enable the fluorescence to be imaged using the pixels under the electrodes. An LED was mounted on the chip. The sensor chip was shaped like a shank to facilitate smooth insertion into the brain tissue. The entire device was coated with a parylene layer to make it biocompatible. The experimental results showed that the green fluorescent beads on the pixel array were successfully imaged using the LED on the chip as a light source. In a brain phantom, the change in the electrical potential was successfully sensed by the electrode, and green fluorescent beads were simultaneously imaged using the pixels under the electrode. We also demonstrated that the CMOS sensor device could successfully operate in the hippocampal area of an anesthetized mouse.

  15. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  16. SEMICONDUCTOR DEVICES: Short channel effect in deep submicron PDSOI nMOSFETs

    NASA Astrophysics Data System (ADS)

    Jianhui, Bu; Jinshun, Bi; Limei, Song; Zhengsheng, Han

    2010-01-01

    Deep submicron partially depleted silicon on insulator (PDSOI) nMOSFETs were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). Mechanisms determining short-channel effects (SCE) in PDSOI nMOSFETs are clarified based on experimental results of threshold voltage dependence upon gate length. The effects of body bias, drain bias, temperature and body contact on the SCE have been investigated. The SCE in SOI devices is found to be dependent on body bias, drain bias and body contact. Floating body devices show a more severe reverse short channel effect (RSCE) than devices with body contact structure. Devices with low body bias and high drain bias show a more obvious SCE.

  17. Glass-to-metal bonding process improves stability and performance of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Trent, R. L.

    1970-01-01

    Anodic bonding of glass coverslips to photodiodes and photovoltaic devices eliminates the need for adhesive. The process requires relatively low temperatures /less than 560 degrees C/ and the metals and glass remain solid throughout the bonding process.

  18. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  19. Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

    NASA Technical Reports Server (NTRS)

    Burns, M. J.; De La Houssaye, P. R.; Russell, S. D.; Garcia, G. A.; Clayton, S. R.; Ruby, W. S.; Lee, L. P.

    1993-01-01

    We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

  20. Point-of-care (POC) devices by means of advanced MEMS.

    PubMed

    Karsten, Stanislav L; Tarhan, Mehmet C; Kudo, Lili C; Collard, Dominique; Fujita, Hiroyuki

    2015-12-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications.

  1. Point-of-care (POC) devices by means of advanced MEMS.

    PubMed

    Karsten, Stanislav L; Tarhan, Mehmet C; Kudo, Lili C; Collard, Dominique; Fujita, Hiroyuki

    2015-12-01

    Microelectromechanical systems (MEMS) have become an invaluable technology to advance the development of point-of-care (POC) devices for diagnostics and sample analyses. MEMS can transform sophisticated methods into compact and cost-effective microdevices that offer numerous advantages at many levels. Such devices include microchannels, microsensors, etc., that have been applied to various miniaturized POC products. Here we discuss some of the recent advances made in the use of MEMS devices for POC applications. PMID:26459443

  2. Device applications and structural and optical properties of Indigo - A biodegradable, low-cost organic semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Zhengjun; Pisane, Kelly L.; Sierros, Konstantinos; Seehra, Mohindar S.; Korakakis, Dimitris

    2015-03-01

    Currently, memory devices based on organic materials are attracting great attention due to their simplicity in device structure, mechanical flexibility, potential for scalability, low-cost potential, low-power operation, and large capacity for data storage. In a recent paper from our group, Indigo-based nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between an indium tin oxide (ITO) cathode and an Al anode, has been reported. This device is found to be at its low resistance state (ON state) and can be switched to high resistance state (OFF state) by applying a positive bias with ON/OFF current ratio of the device being up to 1.02 × e6. A summary of these results along with the structural and optical properties of indigo powder will be reported. Analysis of x-ray diffraction shows a monoclinic structure with lattice parameters a(b)[c] = 0.924(0.577)[0.1222]nm and β =117° . Optical absorption shows a band edge at 1.70 eV with peak of absorption occurring at 1.90 eV. These results will be interpreted in terms of the HOMO-LUMO bands of Indigo.

  3. Bottom-up superconducting and Josephson junction devices and qubits inside a Group-IV semiconductor

    NASA Astrophysics Data System (ADS)

    Shim, Yun-Pil

    2014-03-01

    The Nb/AlOx/Nb (or Al/AlOx/Al) Josephson junction (JJ) has become ubiquitous for superconducting (SC) applications such as magnetometers, voltage standards, logic, and qubits. But heterogeneous devices such as these can pose problems, especially for low-power or quantum applications, where losses in or at the interfaces of the various materials can limit device quality dramatically. Possible solutions include better materials, weak-link junctions, symmetry protection, or 3D cavity qubits. Here we consider another alternative: atomically-precise, hole-doped SC silicon (or germanium) JJ devices and qubits made entirely out of the same crystal. Like the Si spin qubit, our super-semi JJ devices exist inside the ``vacuum'' of ultra-pure silicon, far away from any dirty interfaces. We predict the possibility of SC wires, JJs, and qubits, calculate their critical parameters, and find that most known SC qubits should be realizable. This approach could enable better devices, hybrid superconducting-spin qubit systems, and exotic SC circuits, as well as a new physical testbed for superconductivity.

  4. Single event upset (SEU) of semiconductor devices - A summary of JPL test data

    NASA Astrophysics Data System (ADS)

    Nichols, D. K.; Price, W. E.; Malone, C. J.

    1983-12-01

    The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

  5. Chirp-enhanced fast light in semiconductor optical amplifiers.

    PubMed

    Sedgwick, F G; Pesala, Bala; Uskov, Alexander V; Chang-Hasnain, C J

    2007-12-24

    We present a novel scheme to increase the THz-bandwidth fast light effect in semiconductor optical amplifiers and increase the number of advanced pulses. By introducing a linear chirp to the input pulses before the SOA and recompressing at the output with an opposite chirp, the advance-bandwidth product reached 3.5 at room temperature, 1.55 microm wavelength. This is the largest number reported, to the best of our knowledge, for a semiconductor slow/fast light device.

  6. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  7. SEMICONDUCTOR DEVICES: A high-performance enhancement-mode AlGaN/GaN HEMT

    NASA Astrophysics Data System (ADS)

    Zhihong, Feng; Shengyin, Xie; Rui, Zhou; Jiayun, Yin; Wei, Zhou; Shujun, Cai

    2010-08-01

    An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment. The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1 μm are 10.3 GHz and 12.5 GHz, respectively, which is comparable with the depletion-mode device. A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.

  8. SEMICONDUCTOR DEVICES A compressed wide period-tunable grating working at low voltage

    NASA Astrophysics Data System (ADS)

    Xiang, Liu; Tie, Li; Anjie, Ming; Yuelin, Wang

    2010-10-01

    A MEMS compressed period-tunable grating device with a wide tuning range has been designed, fabricated and characterized. To increase the tuning range, avoid instability with tuning and improve the performance, we propose in this paper a period-tunable grating which is compressed by large-displacement comb actuators with tilted folded beams. The experimental results show that the designed grating device has a compression range of up to 144 μm within 37 V driving voltage. The period of the grating can be adjusted continuously from 16 to 14 μm with a tuning range of 12.5%. The maximum tuning range of the first-order diffraction angle is 0.34° at 632.8 nm and the reflectivity of the grating is more than 92.6% in the mid-infrared region. The grating device can be fabricated by simple processes and finds applications in mid-infrared spectrometers.

  9. SEMICONDUCTOR DEVICES Nanoscale strained-Si MOSFET physics and modeling approaches: a review

    NASA Astrophysics Data System (ADS)

    Chaudhry, Amit; Roy, J. N.; Joshi, Garima

    2010-10-01

    An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

  10. Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Wen; Lou, Jen-Chung; Yeh, Ching-Fa; Hsieh, Chih-Ming; Lin, Shiuan-Jeng; Kusumi, Toshio

    2004-05-01

    Airborne molecular contamination (AMC) is becoming increasingly important as devices are scaled down to the nanometer generation. Optimum ultra low penetration air (ULPA) filter technology can eliminate AMC. In a cleanroom, however, the acid vapor generated from the cleaning process may degrade the ULPA filter, releasing AMC to the air and the surface of wafers, degrading the electrical characteristics of devices. This work proposes the new PTFE ULPA filter, which is resistant to acid vapor corrosion, to solve this problem. Experimental results demonstrate that the PTFE ULPA filter can effectively eliminate the AMC and provide a very clean cleanroom environment.

  11. SEMICONDUCTOR DEVICES Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

    NASA Astrophysics Data System (ADS)

    Lan, Rao; Guofeng, Song; Lianghui, Chen

    2010-10-01

    In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with non-destructive tests.

  12. Influence of majority carrier bandtails on the performance of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Van Mieghem, P.; Decoutere, S.; Borghs, G.; Mertens, R.

    1992-05-01

    A model for bandtailing is built into the 1-D device simulator SEDAN. The influence of bandtails on the current gain of a state-of-the-art bipolar transistor is examined. It is shown that for transistors with high emitter doping, bandtail effects decrease the current gain significantly. This reduction in current gain is more pronounced at low temperature.

  13. Total-dose radiation effects data for semiconductor devices, volume 3

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1982-01-01

    Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

  14. Total-dose radiation effects data for semiconductor devices, volume 3

    NASA Astrophysics Data System (ADS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1982-09-01

    Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

  15. Semiconductor diode laser material and devices with emission in visible region of the spectrum

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Kressel, H.

    1975-01-01

    Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

  16. Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

    2011-03-01

    We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

  17. Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

    NASA Technical Reports Server (NTRS)

    Stirn, Richard J. (Inventor)

    1986-01-01

    A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

  18. Ultrafast-laser-induced surface texturing and crystallization of semiconductors for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Nayak, Barada K.

    This dissertation discusses the development of a novel laser texturing method that enables fabrication of unique nano/micro surface structures in different material systems and their applications. The primary application described in this work is on the development of improved photovoltaic cells. The interaction of ultrafast lasers in the presence of different reactive and inert gases leads towards formation of nearly regular arrays of conical microstructures (and in some cases nanospikes atop microstructures). These textured surfaces trap the incident light very efficiently in a very broad spectrum (almost 100% over the entire solar spectrum and around 95% in the infrared spectral range of 2.5-25 mum for silicon) and the material looks pitch dark to bare eye. We thoroughly investigated the role of different gases and laser parameters on the formation of these structures and their applications. Laser texturing and crystallization can be achieved as a one step process for amorphous thin film silicon for photovoltaic application. We have also demonstrated the unique capability of low cost semiconductor laser for crystallizing thick silicon films for photovoltaic applications. Laser texturing and crystallization technique has been applied to fabricate efficient thin film solar cells. Encouraging results for cells fabricated in bulk textured silicon has also been observed. Additionally, we have demonstrated three unique applications of this texturing technology: (a) producing superhydrophobic surfaces in titanium and stainless steel; (b) fabrication of arrays of micro/nano holes in silicon; (c) growth and proliferation of stem cells in textured titanium surfaces.

  19. Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices

    SciTech Connect

    Le, Son Phuong; Nguyen, Tuan Quy; Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-08-07

    We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputtering-deposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the channel-current-dominated LFN, we obtained Hooge parameters α for the gated region as a function of the sheet electron concentration n{sub s} under the gate. In a regime of small n{sub s}, both the MIS- and Schottky-HFETs exhibit α∝n{sub s}{sup −1}. On the other hand, in a middle n{sub s} regime of the MIS-HFETs, α decreases rapidly like n{sub s}{sup −ξ} with ξ ∼ 2-3, which is not observed for the Schottky-HFETs. In addition, we observe strong increase in α∝n{sub s}{sup 3} in a large n{sub s} regime for both the MIS- and Schottky-HFETs.

  20. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations.

    PubMed

    Mao, Ling-Feng; Ning, H; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-04-22

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.

  1. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    PubMed Central

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-01-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter. PMID:27103586

  2. Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

    NASA Technical Reports Server (NTRS)

    Nichols, Donald K.; Huebner, Mark A.; Price, William E.; Smith, L. S.; Coss, James R.

    1988-01-01

    The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

  3. Evaluation of radiation damage to Metal-Oxide-Semiconductor (MOS) devices

    NASA Astrophysics Data System (ADS)

    1982-12-01

    The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on the radiation hardness, or resistivity to damage, of MOS capacitors. Toward this end, the following tasks were performed: Construction of capacitor TO-5 packages for device evaluation; The experimental determination of the 1 MHz capacitance-voltage bias curves for both the pre- and post-irradiated capacitors; Evaluation of the change in Flat Band Voltage (Delta V sub fb) for the pre- and post-radiation stressed devices; Compilation of all 1 MHz data for cataloging purposes and the establishment of a benchmark for the new computer automated test system; and Reported data to the Contracting Officer's Technical Representative (COTR) on a case-by-case basis, as time was of the essence.

  4. Reliability study of opto-coupled semiconductor devices and Light Emitting Diodes (LED)

    NASA Technical Reports Server (NTRS)

    Maurer, R. C.; Weissflug, V. A.; Sisul, E. V.

    1977-01-01

    Opto-coupler and light emitting diode (LED) failure mechanisms and associated activation energies were determind from the results of environmental and accelerated lift tests of over 2,400 devices. The evaluation program included LED phototransistor opto-couplers from three sources, LED photoamplifier opto-couplers from a single source, and discrete infrared emitting LEDs from two sources. Environmental tests to evaluate device mechanical integrity included power cycling (10,000 cycles), temperature cycling (500 cycles) and a sequence of monitored shock, monitored vibration and constant acceleration. Multiple temperature operating life tests were conducted at ambient temperatures between 25 C and 200 C. Opto-couplers were operated in both the 'on' and 'off' states during life testing.

  5. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    NASA Astrophysics Data System (ADS)

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-04-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.

  6. SEMICONDUCTOR DEVICES: Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress

    NASA Astrophysics Data System (ADS)

    Jing, Zhu; Qinsong, Qian; Weifeng, Sun; Siyang, Liu

    2010-01-01

    The physical mechanisms triggering electrostatic discharge (ESD) in high voltage LDMOS power transistors (> 160 V) under transmission line pulsing (TLP) and very fast transmission line pulsing (VFTLP) stress are investigated by TCAD simulations using a set of macroscopic physical models related to previous studies implemented in Sentaurus Device. Under VFTLP stress, it is observed that the triggering voltage of the high voltage LDMOS obviously increases, which is a unique phenomenon compared with the low voltage ESD protection devices like NMOS and SCR. The relationship between the triggering voltage increase and the parasitic capacitances is also analyzed in detail. A compact equivalent circuit schematic is presented according to the investigated phenomena. An improved structure to alleviate this effect is also proposed and confirmed by the experiments.

  7. Cathodoluminescence observation of SiO2 layers in a semiconductor device

    NASA Astrophysics Data System (ADS)

    Koyama, H.

    1980-04-01

    Dispersive cathodoluminescence images from thin films of SiO2 in a Test-Element-Group pattern of a conventional Large Scale Integrated circuit device were observed. Band A (290 nm) and band C (560 nm) of the cathodoluminescence were characteristic of a thermally grown SiO2 covered with chemically vapor-deposited (CVD) SiO2 and may be useful for the study of irradiation induced damages in SiO2. Band B (415 nm) and band D (650 nm) were intense in the surface CVD SiO2 and may provide information on process induced impurities in SiO2 layers. The spatial resolution of a cathodoluminescence image is 2 μm, and it is possible to survey SiO2 layers on a conventional LSI device with this technique.

  8. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  9. Application of the transition semiconductor semimetal in modulated nanostructures for communication as infrared optoelectronic device

    NASA Astrophysics Data System (ADS)

    El Abidi, A.; Nafidi, A.; Chaib, H.; El Kaaouachi, A.; Braigue, M.; Morghi, R.; EL Yakoubi, E. Y.; d'Astuto, M.

    2010-02-01

    We report here electronic properties of a two-dimensional modulated superlattice nanostructure. Our sample, grown by MBE, had a period d= d1+ d2 (90 layers) of d1=5.6 nm (HgTe)/ d2=3 nm (CdTe). Calculations of the specters of energy E( d2), E( k z) and E( kp), respectively, in the direction of growth and in plane of the superlattice; were performed in the envelope function formalism. The energy E ( d2, Γ, 4.2 K,), shown that for each d1/ d2, when d2 increase the gap Eg decrease to zero at the transition semiconductor to semimetal conductivity behavior and become negative accusing a semimetallic conduction. At 4.2 K, the sample exhibits p type conductivity with a Hall mobility of 8200 cm 2/Vs. This allowed us to observe the Shubnikov-de Haas effect with p=1.80×10 12 cm -2. Using the calculated effective mass (mHH*=0,297m0) of the degenerated heavy holes gas, the Fermi energy (2D) was EF=14 meV in agreement with 12 meV of thermoelectric power α. In intrinsic regime, α∼ T-3/2 and RHT3/2 indicates a gap Eg= E1- HH1=190 meV in agreement with calculated Eg ( Γ, 300 K)=178 meV. The formalism used here predicts that this sample is a narrow gap, two-dimensional modulated nanostructure and medium-infrared detector.

  10. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    SciTech Connect

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  11. SEMICONDUCTOR DEVICES Intrinsic stability of an HBT based on a small signal equivalent circuit model

    NASA Astrophysics Data System (ADS)

    Yanhu, Chen; Huajun, Shen; Xinyu, Liu; Huijun, Li; Hui, Xu; Ling, Li

    2010-12-01

    Intrinsic stability of the heterojunction bipolar transistor (HBT) was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

  12. SEMICONDUCTOR DEVICES: A symbolically defined InP double heterojunction bipolar transistor large-signal model

    NASA Astrophysics Data System (ADS)

    Yuxiong, Cao; Zhi, Jin; Ji, Ge; Yongbo, Su; Xinyu, Liu

    2009-12-01

    A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.

  13. Damage correlations in semiconductor devices exposed to gamma and high energy swift heavy ions

    NASA Astrophysics Data System (ADS)

    Pushpa, N.; Prakash, A. P. Gnana

    2015-05-01

    NPN rf power transistors and N-channel depletion MOSFETs are irradiated by different high energy swift heavy ions and 60Co gamma radiation in the dose range of 100 krad to 100 Mrad. The damage created by different heavy ions and 60Co gamma radiation in NPN rf power transistors and N-channel depletion MOSFETs have been correlated and studied in the same dose range. The recoveries in the electrical characteristics of different swift heavy ions and 60Co gamma irradiated devices have been studied after annihilation.

  14. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

    DOEpatents

    LeToquin, Ronan P; Tong, Tao; Glass, Robert C

    2014-12-30

    Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

  15. Damage correlations in semiconductor devices exposed to gamma and high energy swift heavy ions

    SciTech Connect

    Pushpa, N.; Prakash, A. P. Gnana

    2015-05-15

    NPN rf power transistors and N-channel depletion MOSFETs are irradiated by different high energy swift heavy ions and {sup 60}Co gamma radiation in the dose range of 100 krad to 100 Mrad. The damage created by different heavy ions and {sup 60}Co gamma radiation in NPN rf power transistors and N-channel depletion MOSFETs have been correlated and studied in the same dose range. The recoveries in the electrical characteristics of different swift heavy ions and {sup 60}Co gamma irradiated devices have been studied after annihilation.

  16. Advanced integrated safeguards using front-end-triggering devices

    SciTech Connect

    Howell, J.A.; Whitty, W.J.

    1995-12-01

    This report addresses potential uses of front-end-triggering devices for enhanced safeguards. Such systems incorporate video surveillance as well as radiation and other sensors. Also covered in the report are integration issues and analysis techniques.

  17. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    SciTech Connect

    Hart, Philip R.

    2011-09-27

    This presentation from the Water Peer Review highlights one of the program's marine and hyrokinetics device design projects to scale up the current Ocean Power Technology PowerBuoy from 150kW to 500kW.

  18. SEMICONDUCTOR DEVICES: A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors

    NASA Astrophysics Data System (ADS)

    Miin-Horng, Juang; Chia-Wei, Chang; Der-Chih, Shye; Chuan-Chou, Hwang; Jih-Liang, Wang; Sheng-Liang, Jang

    2010-06-01

    A process simplification scheme for fabricating CMOS poly-Si thin-film transistors (TFTs) has been proposed, which employs large-angle-tilt-implantation of dopant through a gate sidewall spacer (LATITS). By this LATITS scheme, a lightly doped drain region under the oxide spacer is formed by low-dose tilt implantation of phosphorus (or boron) dopant through the spacer, and then the n+-source/drain (n+-S/D) (or p+-S/D) region is formed via using the same photo-mask layer during CMOS integration. For both n-TFT and p-TFT devices, as compared to the sample with conventional single n+-S/D (or p+-S/D) structure, the LATITS scheme can cause an obviously smaller leakage current, due to more gradual dopant distribution and thus smaller electric field. In addition, the resultant on-state currents only show slight degradation for the LATITS scheme. As a result, by the LATITS scheme, CMOS poly-Si TFT devices with an on/off current ratio well above 8 orders may be achieved without needing extra photo-mask layers during CMOS integration.

  19. Recent Advance in Thermoelectric Devices for Electronics Cooling

    NASA Astrophysics Data System (ADS)

    Wang, Peng

    Thermal management of on-chip hot spot, with a heat flux of around 1000 W/cm2, has become one of the major challenges in the development of next-generation microprocessors. Solid state thermoelectric cooler (TEC) offers great promise for hot spot thermal management because of their compact structure, fast response, high reliability, localized cooling, and high flux removal capability. To date TEC has received great attentions in electronics cooling community as one of the potential hot spot cooling solutions. In this paper, recent development and application of hot spot cooling strategies based on micro thermoelectric technologies will be reviewed and discussed, three hot spot cooling concepts, including thinfilm thermoelectric cooling, mini-contact cooling, and semiconductor selfcooling in silicon substrate and germanium substrate will be discussed. The advantages and disadvantages of these on-chip cooling solutions for high flux hot spots will be evaluated.

  20. Epitaxial Growth of Icosahedral Boride Semiconductors for Novel Energy Conversion Devices

    SciTech Connect

    Edgar, J.H.

    2006-01-03

    The chemical vapor deposition and properties of the boron-rich semiconductors B12As2 and B12P2 on 6H-SiC(0001) and silicon substrates were investigated. Crystalline, stoichiometric films were deposited between 1200 C and 1500 C using two types of reactants, hydrides (B2H6 and AsH3) for B12As2 and halides (BBr3 and PBr3) for B12P2. 6H-SiC proved to be the better substrate for B12As2 heteroepitaxy, in terms of the residual impurity concentrations. Films on Si substrates suffered from high concentrations of Si (up to 4at.%); in contrast, the Si and C concentrations in the B12As2 films deposited on 6H-SiC at 1300 C were at or below the detection limits of secondary ion mass spectrometry (SIMS). The deposition temperature was significant as films deposited at 1450 C contained high residual C and Si concentrations (>1020 cm-3), probably due to the decomposition of the substrate. The hydrogen concentration in all B12As2 films was relatively high, with a minimum concentration of 3x1019 cm-3 in undoped B12As2. SIMS measurements showed that the hydrogen concentration was directly proportional to and tracked the Si concentration, reaching values as high as 3 x 1020 cm-3. The structural properties of the B12As2 films were characterized by x-ray diffraction and transmission electron microscopy. The FWHM of typical high resolution x-ray rocking curves for the (333) peaks of the B12As2 films were 800 arcsec. The films are under tensile strain due the higher coefficient of thermal expansion for B12As2 than SiC. Rotational twins were present in B12As2 films deposited on (0001) oriented 6H-SiC substrates, as revealed by cross-sectional TEM and x-ray diffraction pole figures. While the c-plane 6H-SiC has six-fold rotational symmetry, rhombohedral B12As2 has only 3-fold symmetry (along its (111) axis), thus it randomly nucleates with two different in-plane orientations. The electrical properties of undoped and silicon-doped B12As2 deposited on semi-insulating 6H-SiC substrates were

  1. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  2. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Hietala, V.M.; Sloan, L.R.

    1999-02-18

    The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

  3. SEMICONDUCTOR DEVICES: Analysis of a wavelength selectable cascaded DFB laser based on the transfer matrix method

    NASA Astrophysics Data System (ADS)

    Hongyun, Xie; Liang, Chen; Pei, Shen; Botao, Sun; Renqing, Wang; Ying, Xiao; Yunxia, You; Wanrong, Zhang

    2010-06-01

    A novel cascaded DFB laser, which consists of two serial gratings to provide selectable wavelengths, is presented and analyzed by the transfer matrix method. In this method, efficient facet reflectivity is derived from the transfer matrix built for each serial section and is then used to simulate the performance of the novel cascaded DFB laser through self-consistently solving the gain equation, the coupled wave equation and the current continuity equations. The simulations prove the feasibility of this kind of wavelength selectable laser and a corresponding designed device with two selectable wavelengths of 1.51 μm and 1.53 μm is realized by experiments on InP-based multiple quantum well structure.

  4. SEMICONDUCTOR DEVICES MEMS magnetic field sensor based on silicon bridge structure

    NASA Astrophysics Data System (ADS)

    Guangtao, Du; Xiangdong, Chen; Qibin, Lin; Hui, Li; Huihui, Guo

    2010-10-01

    A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 m V/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.

  5. SEMICONDUCTOR DEVICES: Design and optimization of a monolithic GalnP/GalnAs tandem solar cell

    NASA Astrophysics Data System (ADS)

    Han, Zhang; Nuofu, Chen; Yu, Wang; Zhigang, Yin; Xlngwang, Zhang; Huiwei, Shi; Yanshuo, Wang; Tianmao, Huang

    2010-08-01

    We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate.

  6. SEMICONDUCTOR DEVICES Negative bias temperature instability induced single event transient pulse narrowing and broadening

    NASA Astrophysics Data System (ADS)

    Jianjun, Chen; Shuming, Chen; Bin, Liang; Biwei, Liu

    2010-12-01

    The effect of negative bias temperature instability (NBTI) on a single event transient (SET) has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.

  7. Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kerns, D. V., Jr.; Cook, K. B., Jr.

    1978-01-01

    A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

  8. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing

    PubMed Central

    Vander Wal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine activation energies for the catalyst-assisted systems. PMID:22408484

  9. Optical wafer metrology sensors for process-robust CD and overlay control in semiconductor device manufacturing

    NASA Astrophysics Data System (ADS)

    den Boef, Arie J.

    2016-06-01

    This paper presents three optical wafer metrology sensors that are used in lithography for robustly measuring the shape and position of wafers and device patterns on these wafers. The first two sensors are a level sensor and an alignment sensor that measure, respectively, a wafer height map and a wafer position before a new pattern is printed on the wafer. The third sensor is an optical scatterometer that measures critical dimension-variations and overlay after the resist has been exposed and developed. These sensors have different optical concepts but they share the same challenge that sub-nm precision is required at high throughput on a large variety of processed wafers and in the presence of unknown wafer processing variations. It is the purpose of this paper to explain these challenges in more detail and give an overview of the various solutions that have been introduced over the years to come to process-robust optical wafer metrology.

  10. 25th anniversary article: materials for high-performance biodegradable semiconductor devices.

    PubMed

    Hwang, Suk-Won; Park, Gayoung; Cheng, Huanyu; Song, Jun-Kyul; Kang, Seung-Kyun; Yin, Lan; Kim, Jae-Hwan; Omenetto, Fiorenzo G; Huang, Yonggang; Lee, Kyung-Mi; Rogers, John A

    2014-04-01

    We review recent progress in a class of silicon-based electronics that is capable of complete, controlled dissolution when immersed in water or bio-fluids. This type of technology, referred to in a broader sense as transient electronics, has potential applications in resorbable biomedical devices, eco-friendly electronics, environmental sensors, secure hardware systems and others. New results reported here include studies of the kinetics of hydrolysis of nanomembranes of single crystalline silicon in bio-fluids and aqueous solutions at various pH levels and temperatures. Evaluations of toxicity using live animal models and test coupons of transient electronic materials provide some evidence of their biocompatibility, thereby suggesting potential for use in bioresorbable electronic implants.

  11. MovAid- a novel device for advanced rehabilitation monitoring.

    PubMed

    Gupta, Prashant; Verma, Piyush; Gupta, Rakesh; Verma, Bhawna

    2015-08-01

    The present article introduces a new device "MovAid" which helps to measure and monitor rehabilitation. It has two main components- "MovAid device" and the "MovAid Smart Phone Application". The device connects wirelessly to the MovAid smart phone application via Bluetooth. It has electronic sensors to measure three important parameters of the patient- Angle of Joint Bent, Lift from the ground and Orientation of the limb. A mono-axis flex sensor to measure the degree of joint bent and a 3-axis accelerometer and gyroscope to measure the orientation of the limb and lift from the ground have been used. MovAid system bridges the gap between caretakers and patients, empowering both in ways never thought of before, by providing detailed and accurate data on every move. PMID:26737332

  12. SEMICONDUCTOR DEVICES: The microwave large signal load line of an InGaP HBT

    NASA Astrophysics Data System (ADS)

    Lixin, Zhao; Zhi, Jin; Xinyu, Liu

    2010-04-01

    The microwave dynamic load line characteristics of an advanced InGaP HBT are investigated experimentally and analyzed at small signal level and at large signal level for microwave power amplification. Investigation results show that the dynamic load curves are not always like an elliptic curve, and the current extreme points do not locate at voltage extreme points. The dynamic load curve current extreme point lines sit at the small signal load line up to the P-3dB point, and the lines show a constant slope from a small signal up to the saturation power point. A method to calculate the realistically delivered power to load is presented which fits the test result well.

  13. Orientation and morphology of self-assembled oligothiophene semiconductors and development of hybrid nanostructures for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Tevis, Ian David

    stability and improved photovoltaic devices were synthesized using titanium tetrafluoride hydrolysis. Straight perpendicular pores in titanium dioxide were produced by a pattern transfer method from porous anodic aluminum oxide. Films embossed on fluorine-doped tin oxide had pores 30 nm in diameter and 500 nm deep to give a stable structure for housing a p-type organic semiconductor with efficient exciton splitting and light adsorption. Hybrid films could be produced in one step by mineralizing cationic surfactants with titanium dioxide to produce interpenetrating domains of organic and anatase titanium dioxide perpendicular to a transparent conducting electrode.

  14. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  15. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOEpatents

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  16. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOEpatents

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  17. Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

    NASA Astrophysics Data System (ADS)

    Mu, Yifei; Zhao, Ce Zhou; Qi, Yanfei; Lam, Sang; Zhao, Chun; Lu, Qifeng; Cai, Yutao; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2016-04-01

    The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11 GBq Cs137 gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional capacitance-voltage (C-V) and stress module, a pulse C-V and stress module, a conventional current-voltage (I-V) and stress module, a pulse I-V and stress module, a DC on-the-fly (OTF) module and a pulse OTF module. Electrical characteristics of MOS capacitors or MOSFET devices are measured by each module integrated in the probe station under continuous γ-ray exposure and the measurement results are presented. The dose rates of different gate dielectrics are calculated by a novel calculation model based on the Cs137 γ-ray source placed in the probe station. For the sake of operators' safety, an equivalent dose rate of 70 nSv/h at a given operation distance is indicated by a dose attenuation model in the experimental environment. HfO2 thin films formed by atomic layer deposition are employed to investigate the radiation response of the high-κ material by using the conventional C-V and pulse C-V modules. The irradiation exposure of the sample is carried out with a dose rate of 0.175 rad/s and ±1 V bias in the radiation response testing system. Analysis of flat-band voltage shifts (ΔVFB) of the MOS capacitors suggests that the on-site and real-time/pulse measurements detect more serious degradation of the HfO2 thin films compared with the off-site irradiation and conventional measurement techniques.

  18. Optical and electrical characterization of high resistivity semiconductors for constant-bias microbolometer devices

    NASA Astrophysics Data System (ADS)

    Saint John, David B.

    The commercial market for uncooled infrared imaging devices has expanded in the last several decades, following the declassification of pulse-biased microbolometer-based focal plane arrays (FPAs) using vanadium oxide as the sensing material. In addition to uncooled imaging platforms based on vanadium oxide, several constant-bias microbolometer FPAs have been developed using doped hydrogenated amorphous silicon (a-Si:H) as the active sensing material. While a-Si:H and the broader Si1-xGex:H system have been studied within the context of photovoltaic (PV) devices, only recently have these materials been studied with the purpose of qualifying and optimizing them for potential use in microbolometer applications, which demand thinner films deposited onto substrates different than those used in PV. The behavior of Ge:H is of particular interest for microbolometers due to its intrinsically low resistivity without the introduction of dopants, which alter the growth behavior and frustrate any attempt to address the merits of protocrystalline a-Ge:H. This work reports the optical, microstructural, and electrical characterization and qualification of a variety of Si:H, Si1-xGex:H, and Ge:H films deposited using a plasma enhanced chemical vapor deposition (PECVD) process, including a-Ge:H films which exhibit high TCR (4-6 -%/K) and low 1/f noise at resistivities of interest for microbolometers (4000 -- 6000 O cm). Thin film deposition has been performed simultaneously with real-time optical characterization of the growth evolution dynamics, providing measurement of optical properties and surface roughness evolutions relevant to controlling the growth process for deliberate variations in film microstructure. Infrared spectroscopic ellipsometry has been used to characterize the Si-H and Ge-H absorption modes allowing assessment of the hydrogen content and local bonding behavior in thinner films than measured traditionally. This method allows IR absorption analysis of hydrogen

  19. Continuous Monitoring of Electrical Activity of Pancreatic β-Cells Using Semiconductor-Based Biosensing Devices

    NASA Astrophysics Data System (ADS)

    Sakata, Toshiya; Sugimoto, Haruyo

    2011-02-01

    The electrical activity of rat pancreatic β-cells caused by introduction of glucose was directly and noninvasively detected using a cell-based field-effect transistor (FET). Rat pancreatic β-cells were adhered to the gate sensing surface of the cell-based FET. The principle of cell-based FETs is based on the detection of charge density changes such as pH variation at the interface between the cell membrane and the gate surface. The gate surface potential of pancreatic β-cell-based FET increased continuously after introduction of glucose at a high concentration of 10 mg/ml. This result indicates that the electrical activity of β-cells was successfully monitored on the basis of pH changes, i.e., increase in the concentration of hydrogen ions, at the cell/gate interface using the pancreatic β-cell-based FET. We assume that the pH variation based on hydrogen ion accumulation at the cell/gate interface was induced by activation of respiration accompanied by insulin secretion process following glucose addition. The platform based on the field-effect devices is suitable for application in a real-time, noninvasive, and label-free detection system for cell functional analyses.

  20. SEMICONDUCTOR DEVICES: Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs

    NASA Astrophysics Data System (ADS)

    Hongwei, Liu; Runsheng, Wang; Ru, Huang; Xing, Zhang

    2010-04-01

    This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical expression for the low-field mobility is proposed, which covers the entire regime from drift-diffusion transport to quasi-ballistic transport in 1-D, 2-D and 3-D MOSFETs. Two key parameters, namely the long-channel low-field mobility (μ0) and the low-field mean free path (λ0), are obtained from the experimental data, and the transport mechanism transition in MOSFETs is further discussed both experimentally and theoretically. Our work shows that λ0 is available to characterize the inherent transition of the carrier transport mechanism rather than the low-field mobility. The mobility reduces in the MOSFET with the shrinking of the channel length; however, λ0 is nearly a constant, and λ0 can be used as the “entry criterion" to determine whether the device begins to operate under quasi-ballistic transport to some extent.

  1. SEMICONDUCTOR DEVICES Physical effect on transition from blocking to conducting state of barrier-type thyristor

    NASA Astrophysics Data System (ADS)

    Hairong, Li; Siyuan, Li

    2010-12-01

    The transition of the barrier-type thyristor (BTH) from blocking to conducting-state occurs between two entirely contrary physical states with great disparity in nature. The physical effects and mechanisms of the transition are studied in depth. The features of the transition snapback point are analyzed in detail. The transition snapback point has duality and is just the position where the barrier is flattened. It has a significant influence on the capture cross-section of the hole and high-level hole lifetime, resulting in the device entering into deep base conductance modulation. The physical nature of the negative differential resistance segment I-V characteristics is studied. It is testified by using experimental data that the deep conductance modulation is the basic feature and the linchpin of the transition process. The conditions and physical mechanisms of conductance modulation are investigated. The related physical subjects, including the flattening of the channel barrier, the buildup of the double injection, the formation of the plasma, the realization of the high-level injection, the elimination of the gate junction depletion region, the deep conductance modulation, and the increase in the hole's lifetime are all discussed in this paper.

  2. Method of making compound semiconductor films and making related electronic devices

    DOEpatents

    Basol, Bulent M.; Kapur, Vijay K.; Halani, Arvind T.; Leidholm, Craig R.; Roe, Robert A.

    1999-01-01

    A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  3. Detection of ferromagnetic domain wall pinning and depinning with a semiconductor device

    SciTech Connect

    Malec, Chris E.; Bennett, Brian R.; Johnson, Mark B.

    2015-12-21

    We demonstrate the detection of a ferromagnetic domain wall using a nanoscale Hall cross. A narrow permalloy wire is defined lithographically on top of a Hall cross fabricated from an InAs quantum well. The width of the Hall cross (500 nm–1 μm) is similar to the width of the ferromagnetic wire (200–500 nm), and a geometric pinning site is fabricated in the ferromagnetic wire to trap a domain wall within the area of the Hall cross. The devices provide a signal that is often the same order of magnitude as the offset Hall voltage when a domain wall is located above the Hall cross, and may be useful for memory applications. Different geometries for the Hall cross and ferromagnetic wire are tested, and radiofrequency pulses are sent into the wire to demonstrate current driven domain wall motion. Further changes to the Hall bar geometry with respect to the wire geometry are investigated by numerical computation. A large gain in signal is seen for Hall bars only slightly wider than the ferromagnetic wires as compared to those twice as wide, as well as a larger sensitivity to the exact position of the domain wall with respect to the center of the Hall cross.

  4. A Comprehensive Microfluidics Device Construction and Characterization Module for the Advanced Undergraduate Analytical Chemistry Laboratory

    ERIC Educational Resources Information Center

    Piunno, Paul A. E.; Zetina, Adrian; Chu, Norman; Tavares, Anthony J.; Noor, M. Omair; Petryayeva, Eleonora; Uddayasankar, Uvaraj; Veglio, Andrew

    2014-01-01

    An advanced analytical chemistry undergraduate laboratory module on microfluidics that spans 4 weeks (4 h per week) is presented. The laboratory module focuses on comprehensive experiential learning of microfluidic device fabrication and the core characteristics of microfluidic devices as they pertain to fluid flow and the manipulation of samples.…

  5. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  6. Novel device-based interventional strategies for advanced heart failure.

    PubMed

    Toth, Gabor G; Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  7. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  8. Oxide-based method of making compound semiconductor films and making related electronic devices

    DOEpatents

    Kapur, Vijay K.; Basol, Bulent M.; Leidholm, Craig R.; Roe, Robert A.

    2000-01-01

    A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  9. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  10. Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Petit, Jeremy B.; Matus, Lawrence G.

    1991-01-01

    Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

  11. Characterization of failure modes in deep UV and deep green LEDs utilizing advanced semiconductor localization techniques.

    SciTech Connect

    Tangyunyong, Paiboon; Miller, Mary A.; Cole, Edward Isaac, Jr.

    2012-03-01

    We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.

  12. Advanced investigation of two-phase charge-coupled devices

    NASA Technical Reports Server (NTRS)

    Kosonocky, W. F.; Carnes, J. E.

    1973-01-01

    The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

  13. A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Solaro, Yohann; Fonteneau, Pascal; Legrand, Charles-Alex; Marin-Cudraz, David; Golanski, Dominique; Ferrari, Philippe; Cristoloveanu, Sorin

    2016-11-01

    A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.

  14. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  15. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, William Raymond; Zettl, Alex

    2015-03-01

    We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

  16. River Devices to Recover Energy with Advanced Materials (River DREAM)

    SciTech Connect

    McMahon, Daniel P.

    2013-07-03

    The purpose of this project is to develop a generator called a Galloping Hydroelectric Energy Extraction Device (GHEED). It uses a galloping prism to convert water flow into linear motion. This motion is converted into electricity via a dielectric elastomer generator (DEG). The galloping mechanism and the DEG are combined to create a system to effectively generate electricity. This project has three research objectives: 1. Oscillator development and design a. Characterize galloping behavior, evaluate control surface shape change on oscillator performance and demonstrate shape change with water flow change. 2. Dielectric Energy Generator (DEG) characterization and modeling a. Characterize and model the performance of the DEG based on oscillator design 3. Galloping Hydroelectric Energy Extraction Device (GHEED) system modeling and integration a. Create numerical models for construction of a system performance model and define operating capabilities for this approach Accomplishing these three objectives will result in the creation of a model that can be used to fully define the operating parameters and performance capabilities of a generator based on the GHEED design. This information will be used in the next phase of product development, the creation of an integrated laboratory scale generator to confirm model predictions.

  17. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    SciTech Connect

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-06

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as {approx} 16 We/kg and {approx} 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is {approx} 640 m2 and {approx} 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is {approx} 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is {approx} 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  18. Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems

    NASA Astrophysics Data System (ADS)

    Wernsman, Bernard; Mahorter, Robert G.; Siergiej, Richard; Link, Samuel D.; Wehrer, Rebecca J.; Belanger, Sean J.; Fourspring, Patrick; Murray, Susan; Newman, Fred; Taylor, Dan; Rahmlow, Tom

    2005-02-01

    Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are projected to produce > 0.9 W/cm2 at an efficiency > 24% while operating at a converter radiator and module temperature of 1373 K and 325 K, respectively. Radioisotope and nuclear (fission) powered space systems utilizing these advanced TPV modules have been evaluated. For a 100 We radioisotope TPV system, systems utilizing as low as 2 general purpose heat source (GPHS) units are feasible, where the specific power for the 2 and 3 GPHS unit systems operating in a 200 K environment is as large as ˜ 16 We/kg and ˜ 14 We/kg, respectively. For a 100 kWe nuclear powered (as was entertained for the thermoelectric SP-100 program) TPV system, the minimum system radiator area and mass is ˜ 640 m2 and ˜ 1150 kg, respectively, for a converter radiator, system radiator and environment temperature of 1373 K, 435 K and 200 K, respectively. Also, for a converter radiator temperature of 1373 K, the converter volume and mass remains less than 0.36 m3 and 640 kg, respectively. Thus, the minimum system radiator + converter (reactor and shield not included) specific mass is ˜ 16 kg/kWe for a converter radiator, system radiator and environment temperature of 1373 K, 425 K and 200 K, respectively. Under this operating condition, the reactor thermal rating is ˜ 1110 kWt. Due to the large radiator area, the added complexity and mission risk needs to be weighed against reducing the reactor thermal rating to determine the feasibility of using TPV for space nuclear (fission) power systems.

  19. Label-free detection of rheumatoid factor using YbYxOy electrolyte-insulator-semiconductor devices.

    PubMed

    Pan, Tung-Ming; Lin, Ting-Wei; Chen, Ching-Yi

    2015-09-01

    In this study, we investigated the effect of yttrium content on the structural properties and sensing characteristics of YbYxOy sensing membranes for electrolyte-insulator-semiconductor (EIS) sensors to detect the rheumatoid factor (RF). The YbYxOy EIS device prepared at the 60 W plasma condition exhibited a higher sensitivity of 65.77 mV/pH, a lower hysteresis voltage of ∼1 mV, and a smaller drift rate of 0.14 mV/h than did those prepared at the other conditions. We attribute this behavior to the optimal yttrium content in the YbYxOy film forming a smooth surface. Furthermore, we used a novel YbTixOy EIS biosensor to measure the RF antigen in human serum because of its rapid and label-free detection. Two different techniques were used for the immobilization of RF antibody onto the surface of an YbTixOy EIS sensor. The RF antibody was directly immobilized on the EIS surface modified with 3-aminopropyltriethoxysilane (APTES) followed by glutaraldehyde (GA). In contrast, a mixture of 1-ethyl-3-(3-dimethylamino-propyl)carbodiimide (EDC) and N-hydroxysuccinimide (NHS) solution was used to functionalize the carboxyl groups at the tail of RF antibodies. RF antibodies functionalized with the active NHS esters were covalently immobilized on the APTES-modified YbTixOy surface. The immobilized RF antibodies on the EIS that are functionalized with the EDC and NHS exhibit higher (41.11mV/pCRF) for detection of serum RF antigen in the range 10(-7) to 10(-3) M, compared to traditional antibody immobilization technique via APTES and GA linkage. The YbTixOy EIS biosensor is a promising analytical tool for RF antigen monitoring due to its good sensitivity, stability and repeatability.

  20. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    DOEpatents

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  1. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  2. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  3. Artificial Photosynthesis with Semiconductor-Liquid Junctions.

    PubMed

    Guijarro, Néstor; Formal, Florian Le; Sivula, Kevin

    2015-01-01

    Given the urgent need to develop a sustainable, carbon neutral energy storage system on a global scale, intense efforts are currently underway to advance the field of artificial photosynthesis: i.e. solar fuel engineering. In this review we give an overview of the field of artificial photosynthesis using a semiconductor-electrolyte interface employed in a photoelectrochemical device or as a heterogeneous photocatalyst. First we present a basic description of the operation principles of a semiconductor-liquid junction based device. The role of nanotechnology in the recent advances in the field is highlighted and common material systems under current study are briefly reviewed. The importance of the material surfaces are further scrutinized by presenting recent advances in interfacial engineering. Technical challenges and an outlook towards industrialization of the technology are given.

  4. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  5. 9 CFR 381.131 - Preparation of labeling or other devices bearing official inspection marks without advance...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... devices bearing official inspection marks without advance approval prohibited; exceptions. 381.131 Section... Preparation of labeling or other devices bearing official inspection marks without advance approval prohibited... otherwise make any marking device containing any official mark or simulation thereof, or any label...

  6. Advanced materials and device technology for photonic electric field sensors

    NASA Astrophysics Data System (ADS)

    Toney, James E.; Stenger, Vincent E.; Kingsley, Stuart A.; Pollick, Andrea; Sriram, Sri; Taylor, Edward

    2012-10-01

    Photonic methods for electric field sensing have been demonstrated across the electromagnetic spectrum from near-DC to millimeter waves, and at field strengths from microvolts-per-meter to megavolts-per-meter. The advantages of the photonic approach include a high degree of electrical isolation, wide bandwidth, minimum perturbation of the incident field, and the ability to operate in harsh environments. Aerospace applications of this technology span a wide range of frequencies and field strengths. They include, at the high-frequency/high-field end, measurement of high-power electromagnetic pulses, and at the low-frequency/low-field end, in-flight monitoring of electrophysiological signals. The demands of these applications continue to spur the development of novel materials and device structures to achieve increased sensitivity, wider bandwidth, and greater high-field measurement capability. This paper will discuss several new directions in photonic electric field sensing technology for defense applications. The first is the use of crystal ion slicing to prepare high-quality, single-crystal electro-optic thin films on low-dielectricconstant, RF-friendly substrates. The second is the use of two-dimensional photonic crystal structures to enhance the electro-optic response through slow-light propagation effects. The third is the use of ferroelectric relaxor materials with extremely high electro-optic coefficients.

  7. Polarization control for enhanced defect detection on advanced memory devices

    NASA Astrophysics Data System (ADS)

    Lee, Byoung-Ho; Ihm, Dong-Chul; Yeo, Jeong-Ho; Gluk, Yael; Meshulach, Doron

    2006-03-01

    Dense repetitive wafer structures, such as memory cells, with a pitch below the wavelength of the illumination light may take on effective birefringent properties, especially in layers of high refractive index materials such as silicon or conductors. Such induced "form birefringence" effects may result in dependency of the optical response on the illumination polarization and direction. In such structures, control over the polarization of the light becomes important to enhance signal-to-noise ratio (SNR) of pattern defects. We present defect detection results and analysis using DUV laser illumination for different polarization configurations and collection perspectives on Flash RAM devices. Improvement in detection SNR of bridge defect type is observed with linear illumination polarization perpendicular to the pattern lines. Generally, for small design rules (smaller than wavelength) polarization effects become more evident. Also, for smaller defect sizes, detection strongly depends on control of the illumination polarization. Linear polarization perpendicular to the pattern showed penetration into the structure even though the pitch is smaller than the illumination wavelength.

  8. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  9. A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

    2016-08-01

    Numerical solutions of the hydrodynamical model of semiconductor devices are presented in one and two-space dimension. The model describes the charge transport in semiconductor devices. Mathematically, the models can be written as a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the conservation element and solution element (CE/SE) method for hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results of the suggested scheme are compared with the splitting scheme based on Nessyahu-Tadmor (NT) central scheme for convection step and the same semi-implicit scheme for the relaxation step. The effects of various parameters such as low field mobility, device length, lattice temperature and voltages for one-space dimensional hydrodynamic model are explored to further validate the generic applicability of the CE/SE method for the current model equations. A two dimensional simulation is also performed by CE/SE method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

  10. [A device for mandibular advancement in respiratory disorders of sleep. Clinical study].

    PubMed

    Bacon, W; Tschill, P; Sforza, E; Krieger, J

    2000-12-01

    This study describes the technical steps for the making of a mandibular advancement device for sleep disordered patients (apnea index < 10). In a second part of the study, a group of 21 patients with sleep disordered breathing treated successfully with a mandibular advancement device is compared to a homologous control group. The experimental group showed cephalometric characteristics approaching those seen in patients with sleep apnea syndrome. The mandibular advancement device moved the mandibule forward (SNB angle increases by 1.7 degrees) and downward (mandibular plane angle increases by 3 degrees, which can be related to the 7.4 mm anterior vertical height increase). The hyoid bone adopted a more distant position from the cervical vertebrae. Important individual variations were seen among the patients for the optimal repositioning of the mandible.

  11. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  12. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  13. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  14. Recent advances in optimally designed p-n organic semiconductor solar cells

    NASA Astrophysics Data System (ADS)

    Panayotatos, P.; Whitlock, J.; Sauers, R. R.; Husain, S.; Sadrai, M.

    Criteria developed for the optimization of organic semiconductor p-n heterojunction solar cells are reviewed, and successful results stemming from the use of these requirements are presented. Over 30 combinations of organic dye pairs have been tested in more than 400 individual cells fabricated by vacuum evaporation of thin dye layers. Well-matched two-dye cells have given full visible solar spectrum coverage with 60-80 percent absorption. Other best AM1 solar values (not on the same cell) are: monochromatic short-circuit current yields of over 19 percent, short-circuit current densities of over 1.4 mA/sq cm fill factor of 43 percent and open-circuit voltage of 500 mV. The best results have been obtained by matching perylenes with phthalocyanines. The author used the above set of requirements and the previous best performing pair of chloroaluminum phthalocyanine (ClAlPc) and the bis-methylimide of perylenetetracarboxylic acid (DMP) to guide the choice of better matched pairs of dyes. These are arrived at by altering the above dyes through chemical substitutions.

  15. Vapor transport epitaxy: an advanced growth process for III-V and II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Gurary, Alexander; Tompa, Gary S.; Nelson, Craig R.; Stall, Richard A.; Lu, Yicheng; Liang, Shaohua

    1992-09-01

    The Vapor Transport Epitaxy (VTE) thin film deposition technique for the deposition of III - V and II - VI compound semiconductors and material results are reviewed. The motivation for development of the VTE technique is the elimination of several problems common to molecular beam epitaxy/chemical beam epitaxy and metalorganic chemical vapor deposition systems. In VTE, vapors from sources feed through throttling valves into a common manifold which is located directly below the inverted wafer. A high degree of film uniformity is achieved by controlling the flux distribution from the common manifold. The technique operates in the 10-4 - 10-6 Torr range using elemental, metalorganic or gaseous precursors. The system is configurated for 2 inch diameter wafers but the geometry may easily be scaled for larger diameters. Using elemental sources, we have demonstrated oval defect free growth of GaAs on GaAs (100) and (111) 2 degree(s) off substrates, through several microns of thickness at growth rates up to ten microns per hour. GaAs films which were grown without the manifold exhibit classic oval defects. The deposition rate of ZnSe films as a function of elemental flux, VI/II ratio, and growth temperature are described. The ZnSe films exhibited smooth surface morphologies on GaAs (100) 2 degree(s) off substrates. X- ray analysis shows that III - V and II - VI films exhibited crystallinities comparable to films produced by molecular beam epitaxy and metalorganic chemical vapor deposition techniques.

  16. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

    SciTech Connect

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1997-04-01

    This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques.

  17. SEMICONDUCTOR DEVICES: Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions

    NASA Astrophysics Data System (ADS)

    Bo, Lan; Qi, Guo; Jing, Sun; Jiangwei, Cui; Maoshun, Li; Rui, Chen; Wuxiong, Fei; Yun, Zhao

    2010-05-01

    The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.

  18. Verification, Validation and Credibility Assessment of a Computational Model of the Advanced Resistive Exercise Device (ARED)

    NASA Technical Reports Server (NTRS)

    Werner, C. R.; Humphreys, B. T.; Mulugeta, L.

    2014-01-01

    The Advanced Resistive Exercise Device (ARED) is the resistive exercise device used by astronauts on the International Space Station (ISS) to mitigate bone loss and muscle atrophy due to extended exposure to microgravity (micro g). The Digital Astronaut Project (DAP) has developed a multi-body dynamics model of biomechanics models for use in spaceflight exercise physiology research and operations. In an effort to advance model maturity and credibility of the ARED model, the DAP performed verification, validation and credibility (VV and C) assessment of the analyses of the model in accordance to NASA-STD-7009 'Standards for Models and Simulations'.

  19. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  20. Advanced upper limb prosthetic devices: implications for upper limb prosthetic rehabilitation.

    PubMed

    Resnik, Linda; Meucci, Marissa R; Lieberman-Klinger, Shana; Fantini, Christopher; Kelty, Debra L; Disla, Roxanne; Sasson, Nicole

    2012-04-01

    The number of catastrophic injuries caused by improvised explosive devices in the Afghanistan and Iraq Wars has increased public, legislative, and research attention to upper limb amputation. The Department of Veterans Affairs (VA) has partnered with the Defense Advanced Research Projects Agency and DEKA Integrated Solutions to optimize the function of an advanced prosthetic arm system that will enable greater independence and function. In this special communication, we examine current practices in prosthetic rehabilitation including trends in adoption and use of prosthetic devices, financial considerations, and the role of rehabilitation team members in light of our experiences with a prototype advanced upper limb prosthesis during a VA study to optimize the device. We discuss key challenges in the adoption of advanced prosthetic technology and make recommendations for service provision and use of advanced upper limb prosthetics. Rates of prosthetic rejection are high among upper limb amputees. However, these rates may be reduced with sufficient training by a highly specialized, multidisciplinary team of clinicians, and a focus on patient education and empowerment throughout the rehabilitation process. There are significant challenges emerging that are unique to implementing the use of advanced upper limb prosthetic technology, and a lack of evidence to establish clinical guidelines regarding prosthetic prescription and treatment. Finally, we make recommendations for future research to aid in the identification of best practices and development of policy decisions regarding insurance coverage of prosthetic rehabilitation. PMID:22464092